Iodine-stabilized single-frequency green InGaN diode laser.

Science.gov (United States)

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

The Light-Emitting Diode as a Light Detector

Science.gov (United States)

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

Blue laser diode (LD) and light emitting diode (LED) applications

International Nuclear Information System (INIS)

Bergh, Arpad A.

2004-01-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Blue laser diode (LD) and light emitting diode (LED) applications

Energy Technology Data Exchange (ETDEWEB)

Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes

International Nuclear Information System (INIS)

Barnes, C.E.; Swift, G.M.; Guertin, S.; Schwank, J.R.; Armendariz, M.G.; Hash, G.L.; Choquette, K.D.

1999-01-01

Vertical cavity surface emitting laser (VCSEL) diodes are employed as the emitter portion of opto-couplers that are used in space applications. Proton irradiation studies on VCSELs were performed at the Indiana University cyclotron facility. The beam energy was set at 192 MeV, the beam current was 200 nA that is equivalent to a flux of approximately 1*10 11 protons/cm 2 .s. We conclude that the oxide confined VCSELs examined in this study show more than sufficient radiation hardness for nearly all space applications. The observed proton-induced decreases in light output and the corresponding increases in laser threshold current can be explained in terms of proton-induced displacement damage which introduces non-radiative recombination centers in the active region of the lasers and causes a decrease in laser efficiency. These radiation effects accentuate the detrimental thermal effects observed at high currents. We also note that forward bias annealing is effective in these devices in producing at least partial recovery of the light output, and that this may be a viable hardness assurance technique during a flight mission. (A.C.)

Polymer light emitting diodes

International Nuclear Information System (INIS)

Gautier-Thianche, Emmmanuelle

1998-01-01

We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

Diode-pumped CW Nd:SGG laser at 1070 nm

International Nuclear Information System (INIS)

Liang, W; Sun, G C; Yu, X; Li, B Z; Jin, G Y

2011-01-01

We report for the first time (to our knowledge) a diode-pumped Nd:SGG laser emitting at 1070 nm. A power of 1.23 W at 1070 nm has been achieved in continuous-wave (CW) operation with a fiber-coupled laser diode emitting 18.2 W at 806 nm. Intracavity second-harmonic generation (SHG) in CW mode has also been demonstrated with a power of 328 mW at 535 nm by using a LiB 3 O 5 (LBO) nonlinear crystal. The green beam quality factor M 2 was less than 1.22. The green power stability was less 2.5% in 4 hour

Ultraviolet Laser SQUID Microscope for GaN Blue Light Emitting Diode Testing

International Nuclear Information System (INIS)

Daibo, M; Kamiwano, D; Kurosawa, T; Yoshizawa, M; Tayama, N

2006-01-01

We carried out non-contacting measurements of photocurrent distributions in GaN blue light emitting diode (LED) chips using our newly developed ultraviolet (UV) laser SQUID microscope. The UV light generates the photocurrent, and then the photocurrent induces small magnetic fields around the chip. An off-axis arranged HTS-SQUID magnetometer is employed to detect a vector magnetic field whose typical amplitude is several hundred femto-tesla. Generally, it is difficult to obtain Ohmic contacts for p-type GaN because of the low hole concentration in the p-type epitaxial layer and the lack of any available metal with a higher work function compared with the p-type GaN. Therefore, a traditional probecontacted electrical test is difficult to conduct for wide band gap semiconductors without an adequately annealed electrode. Using the UV-laser SQUID microscope, the photocurrent can be measured without any electrical contact. We show the photocurrent vector map which was reconstructed from measured magnetic fields data. We also demonstrate how we found the position of a defect of the electrical short circuits in the LED chip

Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

International Nuclear Information System (INIS)

Breuze, G.; Serre, J.

1992-01-01

With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

Future Solid State Lighting using LEDs and Diode Lasers

DEFF Research Database (Denmark)

Petersen, Paul Michael

2014-01-01

applications. Within the coming years, it is expected that the efficiency of blue laser diodes will approach the efficiency of infrared diode lasers. This will enable high efficiency white light generation with very high lumen per watt values. SSL today is mainly based on phosphor converted blue light emitting......Lighting accounts for 20% of all electrical energy usage. Household lighting and commercial lighting such as public and street lighting are responsible for significant greenhouse gas emissions. Therefore, currently many research initiatives focus on the development of new light sources which shows...... significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...

High brightness diode-pumped organic solid-state laser

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

2015-02-02

High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

Diode lasers optimized in brightness for fiber laser pumping

Science.gov (United States)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

Science.gov (United States)

Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

2018-04-01

We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

International Nuclear Information System (INIS)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-01

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

Energy Technology Data Exchange (ETDEWEB)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1086 (United States)

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

Energy Technology Data Exchange (ETDEWEB)

Merghem, K.; Aubin, G.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Teissier, R.; Baranov, A. N. [Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France); Monakhov, A. M. [Ioffe Institute, 194021 Saint Petersburg (Russian Federation)

2015-09-14

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

International Nuclear Information System (INIS)

Merghem, K.; Aubin, G.; Ramdane, A.; Teissier, R.; Baranov, A. N.; Monakhov, A. M.

2015-01-01

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

Science.gov (United States)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Polarization methods for diode laser excitation of solid state lasers

Science.gov (United States)

Holtom, Gary R.

2008-11-25

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. A Yb-doped gain medium can be used that absorbs light having a first polarization and emits light having a second polarization. Using such pumping with laser cavity dispersion control, pulse durations of less than 100 fs can be achieved.

Frequency locking of compact laser-diode modules at 633 nm

Science.gov (United States)

Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

2018-02-01

This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

OpenAIRE

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Disruptive laser diode source for embedded LIDAR sensors

Science.gov (United States)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

A new design of pulsed laser diode driver system for multistate quantum key distribution

Science.gov (United States)

Abdullah, M. S.; Jamaludin, M. Z.; Witjaksono, G.; Mokhtar, M. H. H.

2011-07-01

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes' life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.

Diode-pumped cw Nd:YAG three-level laser at 869 nm.

Science.gov (United States)

Lü, Yanfei; Xia, Jing; Cheng, Weibo; Chen, Jifeng; Ning, Guobin; Liang, Zuoliang

2010-11-01

We report for the first time (to our knowledge) a diode-pumped Nd:YAG laser emitting at 869 nm based on the (4)F(3/2)-(4)I(9/2) transition, generally used for a 946 nm emission. Power of 453 mW at 869 nm has been achieved in cw operation with a fiber-coupled laser diode emitting 35.4 W at 809 nm. Intracavity second-harmonic generation in the cw mode has also been demonstrated with power of 118 mW at 435 nm by using a BiB(3)O(6) nonlinear crystal. In our experiment, we used a LiNbO(3) crystal lens to complement the thermal lens of the laser rod, and we obtained good beam quality and high output power stability.

Quasi-CW 110 kW AlGaAs laser diode array module for inertial fusion energy laser driver

International Nuclear Information System (INIS)

Kawashima, Toshiyuki

2001-01-01

We have successfully demonstrated a large aperture 803 nm AlGaAs diode laser module as a pump source for a 1053 nm, 10 J output Nd: glass slab laser amplifier for diode-pumped solid-state laser (DPSSL) fusion driver. Detailed performance results of the laser diode module are presented, including bar package and stack configuration, and their thermal design and analysis. A sufficiently low thermal impedance of the stack was realized by combining backplane liquid cooling configuration with modular bar package architecture. Total peak power of 110 kW and electrical to optical conversion efficiently of 46% were obtained from the module consisting of a total of 1000 laser diode bars. A peak intensity of 2.6 kW/cm 2 was accomplished across an emitting area of 418 mm x 10 mm. Currently, this laser diode array module with a large two-dimensional aperture is, to our knowledge, the only operational pump source for the high output energy DPSSL. (author)

Compact 2100 nm laser diode module for next-generation DIRCM

Science.gov (United States)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

International Nuclear Information System (INIS)

Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

2016-01-01

We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Laser diode pumped ND: Glass slab laser for inertial fusion energy

International Nuclear Information System (INIS)

Yamanaka, M.; Kanabe, T.; Matsui, H.

2001-01-01

As a first step of a driver development for the inertial fusion energy, we are developing a laser-diode-pumped zig-zag Nd:glass slab laser amplifier system HALNA 10 (High Average-power Laser for Nuclear-fusion Application) which can generate an output of 10 J per pulse at 1053 nm in 10 Hz operation. The water-cooled zig-zag Nd:glass slab is pumped from both sides by 803-nm AlGaAs laser-diode(LD) module; each LD module has an emitting area of 420 mm x 10 mm and two LD modules generated in total 218 (max.) kW peak power with 2.6kW/cm 2 peak intensity at 10 Hz repetition rate. We have obtained in a preliminary experiment a 8.5 J output energy at 0.5 Hz with beam quality of 2 times diffraction limited far-field pattern, which nearly confirmed our conceptual design. (author)

The impact of external optical feedback on the degradation behavior of high-power diode lasers

DEFF Research Database (Denmark)

Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

2013-01-01

The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

Dye-enhanced diode laser photocoagulation of choroidal neovascularizations

Science.gov (United States)

Klingbeil, Ulrich; Puliafito, Carmen A.; McCarthy, Dan; Reichel, Elias; Olk, Joseph; Lesiecki, Michael L.

1994-06-01

Dye-enhanced diode laser photocoagulation, using the dye indocyanine green (ICG), has shown some potential in the treatment of choroidal neovascularizations (CNV). A diode laser system was developed and optimized to emit at the absorption maximum of ICG. In a clinical study at two retinal centers, more than 70 patients, the majority of which had age-related macular degeneration, were treated. Eighteen cases with ill-defined subfoveal CNV were followed an average of 11 months after laser treatment. The results show success in resolving the CNV with an average long-term preservation of visual function equal to or superior to data provided by the Macular Photocoagulation Study for confluent burns of low intensity applied to the CNV. Details of the technique and discussion of the controversies inherent in such a treatment strategy will be presented.

Resonantly diode-pumped continuous-wave and Q-switched Er:YAG laser at 1645 nm.

Science.gov (United States)

Chang, N W H; Simakov, N; Hosken, D J; Munch, J; Ottaway, D J; Veitch, P J

2010-06-21

We describe an efficient Er:YAG laser that is resonantly pumped using continuous-wave (CW) laser diodes at 1470 nm. For CW lasing, it emits 6.1 W at 1645 nm with a slope efficiency of 36%, the highest efficiency reported for an Er:YAG laser that is pumped in this manner. In Q-switched operation, the laser produces diffraction-limited pulses with an average power of 2.5 W at 2 kHz PRF. To our knowledge this is the first Q-switched Er:YAG laser resonantly pumped by CW laser diodes.

MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

Energy Technology Data Exchange (ETDEWEB)

Hoffmann, Veit

2011-04-18

turned out that the corresponding increase of the line width at low excitation density is a good figure of merit for the decrease of the peak material gain. Using this correlation the growth conditions of the InGaN quantum wells were optimized and current injection laser diodes emitting around 400 nm with threshold current densities around 6 kA/cm{sup 2} could be fabricated. In an next step, the influence of the active region and the waveguiding layer heterostructure on the modal gain of the laser were investigated. Therefore, laser heterostructures characteristics were modeled and compared with those of optically pumped laser structures. It could be shown that the substrate leakage of the mode is reduced as the waveguide layer thickness is increased - especially for emission at longer wavelengths. Additionally, the active region heterostructure needs to be adjusted and GaN substrates with low defects densities are required in order to realize laser diodes with emission around 440 nm. Using optical pump experiments and device simulations the lateral indium mole fraction variations in the quantum wells were decreased, the oscillator strength was increased and the carrier injection into the quantum wells could be improved. As a first result a GaN-substrate-based current injection laser diode with emission around 440 nm and a threshold current density of {proportional_to}10 kA/cm{sup 2} is presented.

Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

Science.gov (United States)

Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

2017-03-01

Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Red-light-emitting laser diodes operating CW at room temperature

Science.gov (United States)

Kressel, H.; Hawrylo, F. Z.

1976-01-01

Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200-8000-A spectral range. These devices operate continuously with simple oxide-isolated stripe contacts to 7400 A, which extends CW operation into the visible (red) portion of the spectrum.

Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

Science.gov (United States)

Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

2018-02-01

Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

Science.gov (United States)

Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

2009-02-10

Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

Red-light-emitting laser diodes operating cw at room temperature

International Nuclear Information System (INIS)

Kressel, H.; Hawrylo, F.Z.

1976-01-01

Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200 to 8000-A spectral range. These devices operate cw with simple oxide-isolated stripe contacts to 7400 A, which extends cw operation for the first time into the visible (red) portion of the spectrum

303 nm continuous wave ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr3+:LiYF4 laser

Science.gov (United States)

Zhu, Pengfei; Zhang, Chaomin; Zhu, Kun; Ping, Yunxia; Song, Pei; Sun, Xiaohui; Wang, Fuxin; Yao, Yi

2018-03-01

We demonstrate an efficient and compact ultraviolet laser at 303 nm generated by intracavity frequency doubling of a continuous wave (CW) laser diode-pumped Pr3+:YLiF4 laser at 607 nm. A cesium lithium borate (CLBO) crystal, cut for critical type I phase matching at room temperature, is used for second-harmonic generation (SHG) of the fundamental laser. By using an InGaN laser diode array emitting at 444.3 nm with a maximum incident power of 10 W, as high as 68 mW of CW output power at 303 nm is achieved. The output power stability in 4 h is better than 2.85%. To the best of our knowledge, this is high efficient UV laser generated by frequency doubling of an InGaN laser diode array pumped Pr3+:YLiF4 laser.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

International Nuclear Information System (INIS)

Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

2013-01-01

An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A

Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

Science.gov (United States)

Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

2016-03-01

Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Science.gov (United States)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Chirp of monolithic colliding pulse mode-locked diode lasers

DEFF Research Database (Denmark)

Hofmann, M.; Bischoff, S.; Franck, Thorkild

1997-01-01

Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

Light-emitting diodes - Their potential in biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

2010-10-15

The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Zhao, Chao; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Priante, Davide; Shen, Chao; Elafandy, Rami T.; Anjum, Dalaver H.; Alhamoud, Abdullah A.; Alatawi, Abdullah A.; Yang, Yang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2016-01-01

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal

2016-10-11

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

The danger of semiconductor laser diode radiation to the human eye

International Nuclear Information System (INIS)

Nier, J.

1977-01-01

The UVV 'Laserstrahlen' (laser beam regulation) sets maximum permissible values for radiation exposure that must not be exceeded on the cornea or skin (wavelength range 200 to 1400nm; cornea values: Normal pulsed operation 5 x 10 -7 Ws/cm 2 , continuous operation (>0.1s)5 x 10 -6 W/cm 2 ). Especially laser diodes emitting in the near infrared invite careless handling, of which this paper warns by a detailed illustration of the danger involved and by numerical examples. Data are given on two commercial laser diodes, a continuous operation diode (continuous power 5mW) and a pulse diode (peak pwer 1W, pulse duration 0.2μs), as well as data on aperture angles and geometrical dimensions. Critical cornea and skin distances are distinguished below which the exposure of cornea and skin in the axis of the emission beam is dangerous. For the unfavourable conditions of focussing with a lens (f = 4cm), the following critical cornea distances are obtained: Continuous diode 2.5 km; pulse diode 23.5m. Calculation formulas for special cases are given. (orig.) 891 MG [de

Highly-reliable laser diodes and modules for spaceborne applications

Science.gov (United States)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

CERN Document Server

Williams, E W; Pamplin, BR

2013-01-01

Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

Investigation of diode-laser pumped thulium-doped fluoride lasers

International Nuclear Information System (INIS)

Matos, Paulo Sergio Fabris de

2006-01-01

Tunable lasers emitting around 2.3 mum region are important in many areas, like gas detection, remote sensing and medical applications. Thulium has a large emission spectra around 2.3 mum with demonstrated tuning range of 2.2-2.45 mum using the YLF host. For efficient pump absorption, a high concentration sensitizer like ytterbium can be used. We demonstrate quasi-cw operation of the Yb:Tm:YLF laser, pumped at 960 nm with a 20 W diode bar achieving the highest output power reported so far of 620 mW. Simultaneous pumping of the 2.3 mm Yb:Tm:YLF laser at 685 nm and 960 nm is demonstrated, showing higher slope efficiency than 960 nm alone. Numerical simulations and analytical models show the best ratio of pump power between both wavelengths. (author)

Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2010-01-01

We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

High energy erbium laser end-pumped by a laser diode bar array coupled to a Nonimaging Optic Concentrator

OpenAIRE

Tanguy , Eric; Feugnet , Gilles; Pocholle , Jean-Paul; Blondeau , R.; Poisson , M.A.; Duchemin , J.P.

1998-01-01

International audience; A high energy Er3+, Yb3+:glass laser end pumped by a laser diode array emitting at 980 nm coupled to a Nonimaging Optic Concentrator (NOC) is demonstrated. Energy up to 100 mJ and a 16% slope efficiency are achieved in a plano-plano laser cavity. The energy transfer coefficient from Yb3+ to Er3+ is estimated by a new method.

Organic light emitting diode with light extracting electrode

Energy Technology Data Exchange (ETDEWEB)

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Dr. Harry Whelan With the Light Emitting Diode Probe

Science.gov (United States)

1999-01-01

The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

AlGaN-based laser diodes for the short-wavelength ultraviolet region

International Nuclear Information System (INIS)

Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji; Takagi, Yasufumi; Uchiyama, Kazuya; Kan, Hirofumi

2009-01-01

We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al 0.2 Ga 0.8 N and Al 0.3 Ga 0.7 N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm -2 , an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA -1 and 10.6±2.7 cm -1 , respectively. We have observed that the characteristic temperature T 0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K -1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Degradation Processes in High-Power Diode Lasers under External Optical Feedback

DEFF Research Database (Denmark)

Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael

2013-01-01

The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii

This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

Background story of the invention of efficient blue InGaN light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Shuji [University of California, Santa Barbara, CA (United States)

2015-06-15

Shuji Nakamura discovered p-type doping in Gallium Nitride (GaN) and developed blue, green, and white InGaN based light emitting diodes (LEDs) and blue laser diodes (LDs). His inventions made possible energy efficient, solid-state lighting systems and enabled the next generation of optical storage. Together with Isamu Akasaki and Hiroshi Amano, he is one of the three recipients of the 2014 Nobel Prize in Physics. In his Nobel lecture, Shuji Nakamura gives an overview of this research and the story of his inventions. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-01-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Efficient generation of 509 nm light by sum-frequency mixing between two tapered diode lasers

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Jensen, Ole Bjarlin; Hansen, Anders Kragh

2015-01-01

We demonstrate a concept for visible laser sources based on sum-frequency generation of beam com- bined tapered diode lasers. In this specific case, a 1.7 W sum-frequency generated green laser at 509 nm is obtained, by frequency adding of 6.17 W from a 978 nm tapered diode laser with 8.06 W from...... a 1063 nm tapered diode laser, inside a periodically poled MgO doped lithium niobate crystal. This corresponds to an optical to optical conversion ef fi ciency of 12.1%. As an example of potential applica- tions, the generated nearly diffraction-limited green light is used for pumping a Ti:sapphire laser......, thus demonstrating good beam quality and power stability. The maximum output powers achieved when pumping the Ti:sapphire laser are 226 mW (CW) and 185 mW (mode-locked) at 1.7 W green pump power. The optical spectrum emitted by the mode-locked Ti:sapphire laser shows a spectral width of about 54 nm...

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl [Inha University, Incheon (Korea, Republic of)

2014-11-15

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

International Nuclear Information System (INIS)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl

2014-01-01

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Laser diode package with enhanced cooling

Science.gov (United States)

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Laser Diode Beam Basics, Manipulations and Characterizations

CERN Document Server

Sun, Haiyin

2012-01-01

Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

Development of laser diode pumped Nd:glass slab laser driver for the inertial fusion energy

International Nuclear Information System (INIS)

Yamanaka, Masanobu; Kanabe, Tadashi; Yasuhara, Ryo

2002-01-01

A diode-pumped solid state laser (DPSSL) is promising candidate of reactor driver for Inertial Fusion Energy (IFE). As a first step of a driver development for the IFE, we are developing a laser diode pumped zig-zag Nd:glass slab laser amplifier system HALNA 10 (High Average-power Laser for Nuclear-fusion Application) which can generated an output of 10 J per pulse at 1053 nm in 10 Hz operation. The water-cooled zig zag Nd:glass slab is pumped from both sides by 803 nm AIGaAs laser diode (LD) module, each LD module has an emitting area of 420 mm x 10 mm and two LD modules generate in total 218 (max.) kW peak power with 2.6 kW/cm 2 peak intensity at 10 Hz repetition rate. We have obtained in first-stage experiment 8.5 J output energy at 0.5 Hz with a beam quality of 2 times diffraction limited far-field pattern, which nearly confirmed our conceptual design. Since the key issue for the IFE DPSSL drive module were almost satisfactory, we have a confidence that a next 100 J x 10 Hz DPSSL module (HALNA 100) can be constructed. Thermal effects in laser slab, Faraday rotator, Faraday isolator and Pockets cell and their managements are discussed.

Diode-pumped laser performance of Tm:Sc2SiO5 crystal at 1971 nm

International Nuclear Information System (INIS)

Liu Bin; Wang Qing-Guo; Tang Hui-Li; Wu Feng; Luo Ping; Zhao Heng-Yu; Shi Jiao-Jiao; He Nuo-Tian; Li Na; Li Qiu; Guo Chao; Wang Zhan-Shan; Xu Jun; Zheng Li-He; Su Liang-Bi; Liu Jun-Fang; Liu Jie; Fan Xiu-Wei; Xu Xiao-Dong

2017-01-01

The 4-at.% Tm:Sc 2 SiO 5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm:SSO with the dimensions of 3 mm× 3 mm× 3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW. (paper)

High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

Science.gov (United States)

Jackson, Stuart D

2009-08-01

A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

Transurethral vaporesection of prostate: diode laser or thulium laser?

Science.gov (United States)

Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

2018-05-01

This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

Science.gov (United States)

Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

2017-06-01

Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

CW light sources at the 589 nm sodium D2 line by sum-frequency mixing of diode pumped neodymium lasers

International Nuclear Information System (INIS)

Lü, Y F; Lu, J; Xu, L J; Sun, G C; Zhao, Z M; Gao, X; Lin, J Q

2010-01-01

We present a laser architecture to obtain continuous-wave (CW) light sources at the 589 nm sodium D2 line. A 808 nm diode-pumped a Nd:YLiF 4 (Nd:YLF) crystal emitting at 1053 nm. A part of the pump power was then absorbed by the Nd:YLF crystal. The remaining was used to pump a Nd:YAG crystal emitting at 1338 nm. Intracavity sum-frequency mixing at 1053 and 1338 nm was then realized in a LiB 3 O 5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 235 mW at 589 nm with a pump laser diode emitting 17.8 W at 808 nm

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

2016-07-15

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

Tapered diode laser pumped 946 nm Nd:YAG laser

DEFF Research Database (Denmark)

Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

2009-01-01

We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

Science.gov (United States)

Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

2017-08-01

Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

Enhanced vbasis laser diode package

Science.gov (United States)

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H.; Ahmed, Osman S.; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport

High power visible diode laser for the treatment of eye diseases by laser coagulation

Science.gov (United States)

Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

2015-03-01

We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

International Nuclear Information System (INIS)

Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

2016-01-01

Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

Modification in oxidative processes in muscle tissues exposed to laser- and light-emitting diode radiation.

Science.gov (United States)

Monich, Victor A; Bavrina, Anna P; Malinovskaya, Svetlana L

2018-01-01

Exposure of living tissues to high-intensity red or near-infrared light can produce the oxidative stress effects both in the target zone and adjacent ones. The protein oxidative modification (POM) products can be used as reliable and early markers of oxidative stress. The contents of modified proteins in the investigated specimens can be evaluated by the 2,4-dinitrophenylhydrazine assay (the DNPH assay). Low-intensity red light is able to decrease the activity of oxidative processes and the DNPH assay data about the POM products in the biological tissues could show both an oxidative stress level and an efficiency of physical agent protection against the oxidative processes. Two control groups of white rats were irradiated by laser light, the first control group by red light and the second one by near-infrared radiation (NIR).Two experimental groups were consequently treated with laser and red low-level light-emitting diode radiation (LED). One of them was exposed to red laser light + LED and the other to NIR + LED. The fifth group was intact. Each group included ten animals. The effect of laser light was studied by methods of protein oxidative modifications. We measured levels of both induced and spontaneous POM products by the DNPH assay. The dramatic increase in levels of POM products in the control group samples when compared with the intact group data as well as the sharp decrease in the POM products in the experimental groups treated with LED low-level light were statistically significant (p ≤ 0.05). Exposure of skeletal muscles to high-intensity red and near-infrared laser light causes oxidative stress that continues not less than 3 days. The method of measurement of POM product contents by the DNPH assay is a reliable test of an oxidative process rate. Red low-intensity LED radiation can provide rehabilitation of skeletal muscle tissues treated with high-intensity laser light.

Pulse-shaping mechanism in colliding-pulse mode-locked laser diodes

DEFF Research Database (Denmark)

Bischoff, Svend; Sørensen, Mads Peter; Mørk, J.

1995-01-01

The large signal dynamics of passively colliding pulse mode-locked laser diodes is studied. We derive a model which explains modelocking via the interplay of gain and loss dynamics; no bandwidth limiting element is necessary for pulse formation. It is found necessary to have both fast and slow...... absorber dynamics to achieve mode-locking. Significant chirp is predicted for pulses emitted from long lasers, in agreement with experiment. The pulse width shows a strong dependence on both cavity and saturable absorber length. (C) 1995 American Institute of Physics....

Quantum key distribution with an entangled light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-12-28

Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

Diode-pumped quasi-three-level Nd:GdV O4–Nd:YAG sum-frequency laser at 464 nm

International Nuclear Information System (INIS)

Lu, Jie

2014-01-01

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 464 nm. A 808 nm diode pumped a Nd:GdV O 4 crystal emitting at 912 nm. A part of the pump power was then absorbed by the Nd:GdV O 4 crystal. The remainder was used to pump a Nd:YAG crystal emitting at 946 nm. Intracavity sum-frequency mixing at 912 and 946 nm was then realized in a LiB 3 O 5 (LBO) crystal to produce blue radiation. We obtained a cw output power of 1.52 W at 464 nm with a pump laser diode emitting 18.4 W at 808 nm. (letter)

Site-controlled InGaN/GaN single-photon-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Growth and characterization of visible diode lasers

International Nuclear Information System (INIS)

Shealy, J.R.; Bour, D.P.

1988-01-01

The (Al x Ga 1-x )yIn 1-y rho material system, lattice matched to GaAs substrates, has received much attention for use in visible laser diodes emitting in the spectral region λ--650-680 nm. When lattice matched to GaAs (y=0.5), this alloy spans a direct band gap range from --1.85 eV (at x=0) to --2.3 eV (near the T-X crossover at chi--0.7) It was only recently that device quality epitaxial layers have been prepared in this material due to difficulties with liquid phase epitaxial (LPE) and halide vapor phase epitaxial growth.Only organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) growth techniques have successfully produced AlGainP laser material

Diode laser-pumped Ho:YLF laser

International Nuclear Information System (INIS)

Hemmati, H.

1987-01-01

The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way

Diode laser based light sources for biomedical applications

DEFF Research Database (Denmark)

Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

2013-01-01

Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes

Directory of Open Access Journals (Sweden)

M. H. Doan

2012-06-01

Full Text Available The influences of the laser lift-off (LLO process on the InGaN/GaN blue light emitting diode (LED structures, grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition, have been comprehensively investigated. The vertical LED structures on Cu carriers are fabricated using electroplating, LLO, and inductively coupled plasma etching processes sequentially. A detailed study is performed on the variation of defect concentration and optical properties, before and after the LLO process, employing high-resolution transmission electron microscopy (HRTEM, scanning electron microscopy (SEM observations, cathodoluminescence (CL, photoluminescence (PL, and high-resolution X-ray diffraction (HRXRD measurements. The SEM observations on the distribution of dislocations after the LLO show well that even the GaN layer near to the multiple quantum wells (MQWs is damaged. The CL measurements reveal that the peak energy of the InGaN/GaN MQW emission exhibits a blue-shift after the LLO process in addition to a reduced intensity. These behaviors are attributed to a diffusion of indium through the defects created by the LLO and creation of non-radiative recombination centers. The observed phenomena thus suggest that the MQWs, the active region of the InGaN/GaN light emitting diodes, may be damaged by the LLO process when thickness of the GaN layer below the MQW is made to be 5 μm, a conventional thickness. The CL images on the boundary between the KrF irradiated and non-irradiated regions suggest that the propagation of the KrF laser beam and an accompanied recombination enhanced defect reaction, rather than the propagation of a thermal shock wave, are the main origin of the damage effects of the LLO process on the InGaN/GaN MQWs and the n-GaN layer as well.

A practical guide to handling laser diode beams

CERN Document Server

Sun, Haiyin

2015-01-01

This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

Recent advancements in spectroscopy using tunable diode lasers

International Nuclear Information System (INIS)

Nasim, Hira; Jamil, Yasir

2013-01-01

Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

Respiratory complications after diode-laser-assisted tonsillotomy.

Science.gov (United States)

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

Energy Technology Data Exchange (ETDEWEB)

Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

International Nuclear Information System (INIS)

Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T.; Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

2016-01-01

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al_0_._7_0Ga_0_._3_0N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm"2.

Thermal properties of high-power diode lasers investigated by means of high resolution thermography

International Nuclear Information System (INIS)

Kozłowska, Anna; Maląg, Andrzej; Dąbrowska, Elżbieta; Teodorczyk, Marian

2012-01-01

In the present work, thermal effects in high-power diode lasers are investigated by means of high resolution thermography. Thermal properties of the devices emitting in the 650 nm and 808 nm wavelength ranges are compared. The different versions of the heterostructure design are analyzed. The results show a lowering of active region temperature for diode lasers with asymmetric heterostructure scheme with reduced quantum well distance from the heterostructure surface (and the heat sink). Optimization of technological processes allowed for the improvement of the device performance, e.g. reduction of solder non-uniformities and local defect sites at the mirrors which was visualized by the thermography.

Laser diode technology for coherent communications

Science.gov (United States)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Clinical Application of Diode Laser (980 nm) in Maxillofacial Surgical Procedures.

Science.gov (United States)

Aldelaimi, Tahrir N; Khalil, Afrah A

2015-06-01

For many procedures, lasers are now becoming the treatment of choice by both clinicians and patients, and in some cases, the standard of care. This clinical study was carried out at Department of Maxillofacial Surgery, Ramadi Teaching Hospital, Rashid Private Hospital and Razi Private Hospital, Anbar Health Directorate, Anbar Province, Iraq. A total of 32 patients including 22 (≈ 70%) male and 10 (≈ 30%) female with age range from 5 months to 34 years old. Chirolas 20 W diode laser emitting at 980 nm was used. Our preliminary clinical findings include sufficient hemostasis, coagulation properties, precise incision margin, lack of swelling, bleeding, pain, scar tissue formation and overall satisfaction were observed in the clinical application. The clinical application of the diode (980 nm) laser in maxillofacial surgery proved to be of beneficial effect for daily practice and considered practical, effective, easy to used, offers a safe, acceptable, and impressive alternative for conventional surgical techniques.

Characteristics of organic light emitting diodes with copper iodide as injection layer

Energy Technology Data Exchange (ETDEWEB)

Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2010-09-30

We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

Compact laser-diode-based femtosecond sources

International Nuclear Information System (INIS)

Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

2004-01-01

This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

Science.gov (United States)

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

Directory of Open Access Journals (Sweden)

Zakharov ND

2007-01-01

Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Operation of AC Adapters Visualized Using Light-Emitting Diodes

Science.gov (United States)

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

The Beam Characteristics of High Power Diode Laser Stack

Science.gov (United States)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Spectral narrowing of a 980 nm tapered diode laser bar

Science.gov (United States)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Ga"lle; Petersen, Paul Michael; Thestrup, Birgitte

2011-03-01

High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope in wavelength specific applications and hence, it is vital to stabilize the emission spectrum of these devices. In our experiment, we describe the wavelength narrowing of a 12 element 980 nm tapered diode laser bar using a simple Littman configuration. The tapered laser bar which suffered from a big smile has been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order, a slow axis focusing cylindrical lens of 40 mm focal length and an output coupler which is 10% reflective. In the free running mode, the laser emission spectrum was 5.5 nm wide at an operating current of 30A. The output power was measured to be in excess of 12W. Under the external cavity operation, the wavelength spread of the laser could be limited to 0.04 nm with an output power in excess of 8 W at an operating current of 30A. The spectrum was found to be tuneable in a range of 16 nm.

Diode laser (980nm) cartilage reshaping

Science.gov (United States)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

Arbitrary waveform generator to improve laser diode driver performance

Science.gov (United States)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Fabrication of organic light emitting diode using Molybdenum ...

Indian Academy of Sciences (India)

65

out by measuring sheet resistance, optical transmittance and surface ... role in the organic light-emitting diode (OLED) performance because it determines the .... coated glass by thermal vacuum deposition method and optimize it by using ...

Diode Laser for Laryngeal Surgery: a Systematic Review.

Science.gov (United States)

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

Science.gov (United States)

Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

2017-02-01

We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

Evaluation of light-emitting diode beacon light fixtures.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Chiao-Wen Yeh

2010-03-01

Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Science.gov (United States)

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

Science.gov (United States)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

2017-11-01

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

Suppressed speckle contrast of blue light emission out of white lamp with phosphors excited by blue laser diodes for high-brightness lighting applications

Science.gov (United States)

Kinoshita, Junichi; Ikeda, Yoshihisa; Takeda, Yuji; Ueno, Misaki; Kawasaki, Yoji; Matsuba, Yoshiaki; Heike, Atsushi

2012-11-01

The speckle contrast of blue light emission out of high-brightness white lamps using phosphors excited by InGaN/GaN blue laser diodes is evaluated as a measure of coherence. As a result, speckle contrast of as low as 1.7%, the same level as a blue light emitting diode, is obtained. This implies that the original blue laser light can be converted into incoherent light through lamp structures without any dynamic mechanisms. This unique speckle-free performance is considered to be realized by multiple scattering inside the lamp structure, the multi-longitudinal mode operation of the blue laser diodes, and the use of multiple laser diodes. Such almost-incoherent white lamps can be applied for general lighting without any nuisance of speckle noise and should be categorized as lamps rather than lasers in terms of laser safety regulation.

Power scaling of laser diode pumped Pr3+:LiYF4 cw lasers: efficient laser operation at 522.6 nm, 545.9 nm, 607.2 nm, and 639.5 nm.

Science.gov (United States)

Gün, Teoman; Metz, Philip; Huber, Günter

2011-03-15

We report efficient cw laser operation of laser diode pumped Pr(3+)-doped LiYF4 crystals in the visible spectral region. Using two InGaN laser diodes emitting at λ(P)=443.9 nm with maximum output power of 1 W each and a 2.9-mm-long crystal with a doping concentration of 0.5%, output powers of 938 mW, 418 mW, 384 mW, and 773 mW were achieved for the laser wavelengths 639.5 nm, 607.2 nm, 545.9 nm, and 522.6 nm, respectively. The maximum absorbed pump powers were approximately 1.5 W, resulting in slope efficiencies of 63.6%, 32.0%, 52.1%, and 61.5%, as well as electro-optical efficiencies of 9.4%, 4.2%, 3.8%, and 7.7%, respectively. Within these experiments, laser diode-pumped laser action at 545.9 nm was demonstrated for what is believed to be the first time.

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

White organic light emitting diodes based on fluorene-carbazole dendrimers

International Nuclear Information System (INIS)

Usluer, Özlem; Demic, Serafettin; Kus, Mahmut; Özel, Faruk; Serdar Sariciftci, Niyazi

2014-01-01

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m 2 and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films

Radiation effects in semiconductor laser diode arrays

International Nuclear Information System (INIS)

Carson, R.F.

1988-01-01

The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

Science.gov (United States)

Shaw-Stewart, James; Mattle, Thomas; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

Energy Technology Data Exchange (ETDEWEB)

Shaw-Stewart, James, E-mail: james.shaw-stewart@ed.ac.uk [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Mattle, Thomas [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Nagel, Matthias [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Nüesch, Frank, E-mail: frank.nueesch@empa.ch [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Section de science et génie des matériaux, EPFL, CH-1015 Lausanne (Switzerland); Wokaun, Alexander [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland)

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

2015-12-15

Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

Ultrafast photoconductor detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

1987-01-01

We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Diode Laser Application in Soft Tissue Oral Surgery

Science.gov (United States)

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Passive mode locking in a multisegment laser diode with an external cavity

International Nuclear Information System (INIS)

Andreeva, E V; Magnitskiy, Sergey A; Koroteev, Nikolai I; Salik, E; Feinberg, J; Starodubov, D S; Shramenko, M V; Yakubovich, S D

1999-01-01

The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 - 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics. (lasers)

Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

Directory of Open Access Journals (Sweden)

Hsu Chih-Neng

2013-01-01

Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

Nonimaging concentrators for diode-pumped slab lasers

Science.gov (United States)

Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

1991-10-01

Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

Eye safe high power laser diode in the 1410-1550nm range

Science.gov (United States)

Boucart, Julien; de Largy, Brian; Kearley, Mark; Lichtenstein, Norbert

2010-02-01

The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

An efficient continuous-wave 591 nm light source based on sum-frequency mixing of a diode pumped Nd:GdVO4–Nd:CNGG laser

International Nuclear Information System (INIS)

Zhao, Y D; Liu, J H

2013-01-01

We report a laser architecture to obtain continuous-wave (CW) yellow-orange light sources at the 591 nm wavelength. An 808 nm diode pumped a Nd:GdVO 4 crystal emitting at 1063 nm. A part of the pump power was then absorbed by the Nd:CNGG crystal. The remaining pump power was used to pump a Nd:CNGG crystal emitting at 1329 nm. Intracavity sum-frequency mixing at 1063 and 1329 nm was then realized in a LiB 3 O 5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 494 mW at 591 nm with a pump laser diode emitting 17.8 W at 808 nm. (paper)

Spectral narrowing of a 980 nm tapered diode laser bar

DEFF Research Database (Denmark)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Gaëlle

2011-01-01

High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope...... been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order......, a slow axis focusing cylindrical lens of 40 mm focal length and an output coupler which is 10% reflective. In the free running mode, the laser emission spectrum was 5.5 nm wide at an operating current of 30A. The output power was measured to be in excess of 12W. Under the external cavity operation...

Diode laser pumping

International Nuclear Information System (INIS)

Skagerlund, L.E.

1975-01-01

A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

Science.gov (United States)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

2017-08-01

The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Effect of the laser and light-emitting diode (LED) phototherapy on midpalatal suture bone formation after rapid maxilla expansion: a Raman spectroscopy analysis.

Science.gov (United States)

Rosa, Cristiane Becher; Habib, Fernando Antonio Lima; de Araújo, Telma Martins; Aragão, Juliana Silveira; Gomes, Rafael Soares; Barbosa, Artur Felipe Santos; Silveira, Landulfo; Pinheiro, Antonio L B

2014-05-01

The aim of this study was to analyze the effect of laser or light-emitting diode (LED) phototherapy on the bone formation at the midpalatal suture after rapid maxilla expansion. Twenty young adult male rats were divided into four groups with 8 days of experimental time: group 1, no treatment; group 2, expansion; group 3, expansion and laser irradiation; and group 4, expansion and LED irradiation. In groups 3 and 4, light irradiation was in the first, third, and fifth experimental days. In all groups, the expansion was accomplished with a helicoid 0.020" stainless steel orthodontic spring. A diode laser (λ780 nm, 70 mW, spot of 0.04 cm(2), t = 257 s, spatial average energy fluence (SAEF) of 18 J/cm(2)) or a LED (λ850 nm, 150 mW ± 10 mW, spot of 0.5 cm(2), t = 120 s, SAEF of 18 J/cm(2)) were used. The samples were analyzed by Raman spectroscopy carried out at midpalatal suture and at the cortical area close to the suture. Two Raman shifts were analyzed: ∼ 960 (phosphate hydroxyapatite) and ∼ 1,450 cm(-1) (lipids and protein). Data was submitted to statistical analysis. Significant statistical difference (p ≤ 0.05) was found in the hydroxyapatite (CHA) peaks among the expansion group and the expansion and laser or LED groups. The LED group presented higher mean peak values of CHA. No statistical differences were found between the treated groups as for collagen deposition, although LED also presented higher mean peak values. The results of this study using Raman spectral analysis indicate that laser and LED light irradiation improves deposition of CHA in the midpalatal suture after orthopedic expansion.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu

2015-12-22

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

Ultrafast photoconductive detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

1987-01-01

The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

outcome of diode laser cyclophotocoagulation in neovascular ...

African Journals Online (AJOL)

Duke

including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

Interband type-II miniband-to-bound state diode lasers for the midinfrared

International Nuclear Information System (INIS)

Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.

2004-01-01

A design for midinfrared diode lasers based on interband type-II miniband-to-bound state transitions is proposed and has been demonstrated experimentally. Type-II miniband-to-bound state laser structures emitting at 3.25 μm with active regions consisting of 5 and 10 W periods were grown by solid-source molecular-beam epitaxy and processed into ridge waveguide lasers. Substrate-side down mounted devices with a 10 period active region and uncoated facets could be operated in continuous-wave (cw) mode up to 185 K and as high as 260 K in pulsed mode. A high characteristic temperature of 100 K has been achieved for heat-sink temperatures below 140 K, decreasing to 33 K for the 140 to 185 K interval. At 110 K, a 5 period laser structure exhibited a threshold current density of 177 A/cm 2 and a slope efficiency of 61 mW/A. Single-ended output powers of 144 mW in cw mode and exceeding 330 mW in pulsed operation were obtained for a substrate-side down mounted 5 period diode laser with high-reflection/antireflection coated mirror facets, operated at 110 K

Next generation diode lasers with enhanced brightness

Science.gov (United States)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Fluorescence lifetime imaging using light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A [Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Elson, Daniel S [Institute of Biomedical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Hares, Jonathan D [Kentech Instruments Ltd, Unit 9, Hall Farm Workshops, South Moreton, Didcot, Oxfordshire, OX11 9AG (United Kingdom)], E-mail: gordon.kennedy@imperial.ac.uk

2008-05-07

We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM.

White organic light emitting diodes based on fluorene-carbazole dendrimers

Energy Technology Data Exchange (ETDEWEB)

Usluer, Özlem, E-mail: usluerozlem@yahoo.com.tr [Department of Chemistry, Muğla Sıtkı Koçman University, 48000 Muğla (Turkey); Demic, Serafettin [Department of Materials Science and Engineering, Izmir Katip Çelebi University, 35620 Çiğli, Izmir (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Özel, Faruk [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Serdar Sariciftci, Niyazi [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria)

2014-02-15

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m{sup 2} and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films.

APPLICATION OF LIGHT EMITTING DIODE IRRADIATION IN SURGERY AND OTHER FIELDS OF MEDICINE

Directory of Open Access Journals (Sweden)

Iskander Mukhamedovich Baybekov

2017-05-01

Full Text Available Goal. To study the experience of using Light Emitting Diode (LED in surgery and other areas of medicine. Methods and methodology. The methodological basis is the analysis of literature, synthesis of the results of experimental and clinical studies, as well as a modern interpretation of the mechanisms of action of low-intensity laser radiation and LED effects on the body. Special attention is paid to the experience of clinical and morphological studies LED of impacts at the Republican specialized center of surgery named academician V. Vahidov of the Ministry of health of the Republic of Uzbekistan. Results. Comparative features of LED and lasers, such as stimulation of reparative processes, their influence on healing of skin wounds and sternum after sternotomy, red blood cells and microcirculation are discussed. Conclusion. It has been suggested that LED is a worthy alternative to lasers. Their use is advisable in complex treatment of surgical diseases.

Low-cost 420nm blue laser diode for tissue cutting and hemostasis

Science.gov (United States)

Linden, Kurt J.

2016-03-01

This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

Diode lasers and arrays

International Nuclear Information System (INIS)

Streifer, W.

1988-01-01

This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

DEFF Research Database (Denmark)

Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

Improvement of the beam quality of a broad-area diode laser using double feedback from two external mirrors

DEFF Research Database (Denmark)

Chi, M.; Bøgh, A.-S.; Thestrup, B.

2004-01-01

In this letter, a symmetric double-feedback configuration, to improve the beam quality of broad-area diode lasers is demonstrated. With this configuration, a symmetric double-lobed far field can be obtained, and this configuration leads to good beam quality. The beam quality factor M-2 of a diode...... laser with the emitting area 1 mumx200 mum is improved by using both the asymmetric single feedback and the symmetric double feedback. M-2 values of 4.3 for the asymmetric single-feedback laser system and 3.3 for the symmetric double-feedback laser system are obtained, whereas the M-2 value...... of the freely running laser is 42. The far and the near fields are also measured and compared for the three conditions. (C) 2004 American Institute of Physics....

Wavelength stabilized multi-kW diode laser systems

Science.gov (United States)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

Photoresponse of poly(para-phenylenevinylene) light-emitting diodes

International Nuclear Information System (INIS)

Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.

1994-01-01

We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

International Nuclear Information System (INIS)

Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

2010-01-01

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

Science.gov (United States)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

2017-01-01

higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Seven-laser diode end-pumped Nd

International Nuclear Information System (INIS)

Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

1988-01-01

End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

Investigation of diode-laser pumped thulium-doped fluoride lasers; Investigacao de lasers de floureto dopados com tulio e bombeados por diodo-laser

Energy Technology Data Exchange (ETDEWEB)

Matos, Paulo Sergio Fabris de

2006-07-01

Tunable lasers emitting around 2.3 mum region are important in many areas, like gas detection, remote sensing and medical applications. Thulium has a large emission spectra around 2.3 mum with demonstrated tuning range of 2.2-2.45 mum using the YLF host. For efficient pump absorption, a high concentration sensitizer like ytterbium can be used. We demonstrate quasi-cw operation of the Yb:Tm:YLF laser, pumped at 960 nm with a 20 W diode bar achieving the highest output power reported so far of 620 mW. Simultaneous pumping of the 2.3 mm Yb:Tm:YLF laser at 685 nm and 960 nm is demonstrated, showing higher slope efficiency than 960 nm alone. Numerical simulations and analytical models show the best ratio of pump power between both wavelengths. (author)

Organic light emitting diodes with spin polarized electrodes

NARCIS (Netherlands)

Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

2003-01-01

Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

High-power green diode laser systems for biomedical applications

DEFF Research Database (Denmark)

Müller, André

propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

High power diode lasers converted to the visible

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

2017-01-01

High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

International Nuclear Information System (INIS)

Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W. II; Meyer, Glenn A.

1998-01-01

Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin registered . Photofrin registered is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin registered is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin registered has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin registered . First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was

Photoluminescence excitation measurements using pressure-tuned laser diodes

Science.gov (United States)

Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

2015-06-01

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

Photoluminescence excitation measurements using pressure-tuned laser diodes

International Nuclear Information System (INIS)

Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

2015-01-01

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

Compact green-diode-based lasers for biophotonic bioimaging

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

2014-01-01

Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Developments in lead-salt diode lasers

International Nuclear Information System (INIS)

Partin, D.L.

1985-01-01

Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

Note: A flexible light emitting diode-based broadband transient-absorption spectrometer

Science.gov (United States)

Gottlieb, Sean M.; Corley, Scott C.; Madsen, Dorte; Larsen, Delmar S.

2012-05-01

This Note presents a simple and flexible ns-to-ms transient absorption spectrometer based on pulsed light emitting diode (LED) technology that can be incorporated into existing ultrafast transient absorption spectrometers or operate as a stand-alone instrument with fixed-wavelength laser sources. The LED probe pulses from this instrument exhibit excellent stability (˜0.5%) and are capable of producing high signal-to-noise long-time (>100 ns) transient absorption signals either in a broadband multiplexed (spanning 250 nm) or in tunable narrowband (20 ns) operation. The utility of the instrument is demonstrated by measuring the photoinduced ns-to-ms photodynamics of the red/green absorbing fourth GMP phosphodiesterase/adenylyl cyclase/FhlA domain of the NpR6012 locus of the nitrogen-fixing cyanobacterium Nostoc punctiforme.

Active stabilization of a diode laser injection lock.

Science.gov (United States)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser

International Nuclear Information System (INIS)

Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

2004-01-01

The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs

Building block diode laser concept for high brightness laser output in the kW range and its applications

Science.gov (United States)

Ferrario, Fabio; Fritsche, Haro; Grohe, Andreas; Hagen, Thomas; Kern, Holger; Koch, Ralf; Kruschke, Bastian; Reich, Axel; Sanftleben, Dennis; Steger, Ronny; Wallendorf, Till; Gries, Wolfgang

2016-03-01

The modular concept of DirectPhotonics laser systems is a big advantage regarding its manufacturability, serviceability as well as reproducibility. By sticking to identical base components an economic production allows to serve as many applications as possible while keeping the product variations minimal. The modular laser design is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking several diodes in fast axis. This can be theoretically done until the combined fast axis beam quality is on a comparable level as the individual diodes slow axis beam quality without loosing overall beam performance after fiber coupling. Those stacked individual emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100 W with BPP of BPP. The 500 W building blocks are consequently designed in a way that they feature a high flexibility with regard to their emitting wavelength bandwidth. Therefore, new wavelengths can be implemented by only exchanging parts and without any additional change of the production process. This design principal theoretically offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR as long as there are any diodes commercially available. This opens numerous additional applications like laser pumping, scientific applications, materials processing such as cutting and welding of copper aluminum or steel and also medical application. Typical operating at wavelengths in the 9XX nm range, these systems are designed for and mainly used in cutting and welding applications, but adapted wavelength ranges such as 793 nm and 1530 nm are also offered. Around 15XX nm the diodes are already successfully used for resonant pumping of Erbium lasers [1]. Furthermore, the fully integrated electronic

Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2009-01-01

We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

Visible Solid State Lasers

NARCIS (Netherlands)

Hikmet, R.A.M.

2007-01-01

Diode lasers can be found in various applications most notably in optical communication and optical storage. Visible lasers were until recently were all based on IR diode lasers. Using GaN, directly blue and violet emitting lasers have also been introduced to the market mainly in the area of optical

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

Analysis of UV-excited fluorochromes by flow cytometry using near-ultraviolet laser diodes.

Science.gov (United States)

Telford, William G

2004-09-01

Violet laser diodes have become common and reliable laser sources for benchtop flow cytometers. While these lasers are very useful for a variety of violet and some ultraviolet-excited fluorochromes (e.g., DAPI), they do not efficiently excite most UV-stimulated probes. In this study, the next generation of InGaN near-UV laser diodes (NUVLDs) emitting in the 370-375-nm range have been evaluated as laser sources for cuvette-based flow cytometers. Several NUVLDs, ranging in wavelength from 370 to 374 nm and in power level from 1.5 to 10 mW, were mounted on a BD Biosciences LSR II and evaluated for their ability to excite cells labeled with the UV DNA binding dye DAPI, several UV phenotyping fluorochromes (including Alexa Fluor 350, Marina Blue, and quantum dots), and the fluorescent calcium chelator indo-1. NUVLDs at the 8-10-mW power range gave detection sensitivity levels comparable to more powerful solid-state and ion laser sources, using low-fluorescence microsphere beads as measurement standards. NUVLDs at all tested power levels allowed extremely high-resolution DAPI cell cycle analysis, and sources in the 8-10-mW power range excited Alexa Fluor 350, Marina Blue, and a variety of quantum dots at virtually the same signal-to-noise ratios as more powerful UV sources. These evaluations indicate that near-UV laser diodes installed on a cuvette-based flow cytometer performed nearly as well as more powerful solid-state UV lasers on the same instrumentation, and comparably to more powerful ion lasers on a jet-in-air system, and. Despite their limited power, integration of these small and inexpensive lasers into benchtop flow cytometers should allow the use of flow cytometric applications requiring UV excitation on a wide variety of instruments. Copyright 2004 Wiley-Liss, Inc.

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Pulsed operation of high-power light emitting diodes for imaging flow velocimetry

International Nuclear Information System (INIS)

Willert, C; Klinner, J; Moessner, S; Stasicki, B

2010-01-01

High-powered light emitting diodes (LED) are investigated for possible uses as light sources in flow diagnostics, in particular, as an alternative to laser-based illumination in particle imaging flow velocimetry in side-scatter imaging arrangements. Recent developments in solid state illumination resulted in mass-produced LEDs that provide average radiant power in excess of 10 W. By operating these LEDs with short duration, pulsed currents that are considerably beyond their continuous current damage threshold, light pulses can be generated that are sufficient to illuminate and image micron-sized particles in flow velocimetry. Time-resolved PIV measurements in water at a framing rate of 2kHz are presented. The feasibility of LED-based PIV measurements in air is also demonstrated

Reliable Operation for 14500 h of a Wavelength-Stabilized Diode Laser System on a Microoptical Bench at 671 nm

DEFF Research Database (Denmark)

Sumpf, Bernd; Maiwald, Martin; Müller, André

2012-01-01

Reliability tests for wavelength-stabilized compact diode laser systems emitting at 671 nm are presented. The devices were mounted on microoptical benches with the dimensions of 13 mm $\\times\\,$4 mm. Reflecting Bragg gratings were used for wavelength stabilization and emission width narrowing...

High Power High Efficiency Diode Laser Stack for Processing

Science.gov (United States)

Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

2018-03-01

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

Laser diode technology and applications

International Nuclear Information System (INIS)

Figueroa, L.

1989-01-01

This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

Experimental transconjunctival diode laser retinal photocoagulation through silicone scleral exoplants.

Science.gov (United States)

Nanda, S K; Han, D P

1995-07-01

To study the feasibility of inducing a chorioretinal lesion under a previously placed scleral buckle by experimental transconjunctival diode laser photocoagulation. We performed transconjunctival diode laser photocoagulation in the peripheral retinas of seven pigmented rabbit eyes with a silicone exoplant (No. 42 band or No. 276 tire) and seven eyes without an exoplant. Each eye received burns with an intensity of grades 1 to 3 in different quadrants at varying power levels, with a 0.5-second duration and 650-micron spot size. Eyes were enucleated for histopathologic studies 1 day and 1 week after treatment. Although the irradiance emitted through the No. 42 band and the No. 276 tire was attenuated by 17% and 23%, respectively, the range of threshold powers needed to produce grades 1 to 3 burns was similar between eyes with and without a silicone exoplant. At 1 day, full-thickness coagulative necrosis was observed in all lesions, except that the ganglion cell layer and inner nuclear layer were preserved in two of four grade 1 burns and the ganglion cell layer was intact in one of six grade 2 burns. Inner scleral changes were noted acutely in three of five grade 3 lesions. At 1 week, burns of all intensity grades showed a full-thickness atrophic chorioretinal lesion with inner scleral changes. Experimental transconjunctival diode laser photocoagulation through hard silicone elements reproducibly created a chorioretinal lesion with histopathologic findings similar to those of lesions obtained without these elements. Although retinal photocoagulative effects were prominent, inner scleral abnormalities were also observed histologically.

High-power direct diode laser output by spectral beam combining

Science.gov (United States)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

Safety of light emitting diodes in toys.

Science.gov (United States)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-03-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Safety of light emitting diodes in toys

International Nuclear Information System (INIS)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-01-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

Science.gov (United States)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (value of less than 2MHz.

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

2018-02-02

Feb 2, 2018 ... emitting diode (OLED) can be enhanced by using light- extraction ... to grow, ω should posses a positive value, which is possible only when ∂φ/∂h < 0, .... To detect small changes, first, the source LED was sta- bilized by ...

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Continuous-wave generation and tunability of eye-safe resonantly diode-pumped Er:YAG laser

Science.gov (United States)

Němec, Michal; Indra, Lukás.; Šulc, Jan; Jelínková, Helena

2016-03-01

Laser sources generating radiation in the spectral range from 1.5 to 1.7 μm are very attractive for many applications such as satellite communication, range finding, spectroscopy, and atmospheric sensing. The goal of our research was an investigation of continuous-wave generation and wavelength tuning possibility of diode pumped eye-safe Er:YAG laser emitting radiation around 1645 nm. We used two 0.5 at. % doped Er:YAG active media with lengths of 10 mm and 25 mm (diameter 5 mm). As a pumping source, a fibre-coupled 1452 nm laser-diode was utilized, which giving possibility of the in-band pumping with a small quantum defect and low thermal stress of the active bulk laser material. The 150 mm long resonator was formed by a pump mirror (HT @ 1450 nm, HR @ 1610 - 1660 nm) and output coupler with 96 % reflectivity at 1610 - 1660 nm. For continuous-wave generation, the maximal output powers were 0.7 W and 1 W for 10 mm and 25 mm long laser crystals, respectively. The corresponding slope efficiencies with respect to absorbed pump power for these Er:YAG lasers were 26.5 % and 37.8 %, respectively. The beam spatial structure was close to the fundamental Gaussian mode. A wavelength tunability was realized by a birefringent plate and four local spectral maxima at 1616, 1633, 1645, and 1657 nm were reached. The output characteristics of the designed and realized resonantly diode-pumped eye-safe Er:YAG laser show that this compact system has a potential for usage mainly in spectroscopic fields.

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo

2010-01-26

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We demonstrate organic light-emitting diodes with solution-processed graphene thin film transparent conductive anodes. The graphene electrodes were deposited on quartz substrates by spincoating of an aqueous dispersion of functionalized graphene, followed by a vacuum anneal step to reduce the sheet resistance. Small molecular weight organic materials and a metal cathode were directly deposited on the graphene anodes, resulting in devices with a performance comparable to control devices on indium-tin-oxide transparent anodes. The outcoupling efficiency of devices on graphene and indium-tin-oxide is nearly identical, in agreement with model predictions. © 2010 American Chemical Society.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Science.gov (United States)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2015-02-28

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Non-radiative recombination losses in polymer light-emitting diodes

NARCIS (Netherlands)

Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

Liquid metals as electrodes in polymer light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Gommans, H.H.P.; Denier van der Gon, A.W.; Brongersma, H.H.

2003-01-01

We demonstrate that liquid metals can be used as cathodes in light emitting diodes (pLEDs). The main difference between the use of liquid cathodes and evaporated cathodes is the sharpness of the metal–polymer interface. Liquid metal cathodes result in significantly sharper metal–organic interfaces

Diode-pumped efficient laser operation and spectroscopy of Tm,Ho:YVO 4

Science.gov (United States)

Li, G.; Yao, B. Q.; Meng, P. B.; Duan, X. M.; Ju, Y. L.; Wang, Y. Z.

2011-04-01

Spectroscopic characterization of co-doped Tm,Ho:YVO 4 crystal grown by the Czochralski method has been performed including absorption spectrum, emitting spectrum and luminescence decay lifetime. The polarization emitting spectrum around 2 μm is accomplished by exciting a singly Ho 3+ doped YVO 4 crystal to exclude the influence of Tm 3+3F 4- 3H 6 transition and the emission cross section is deduced from both Fuchtbauer-Ladenburg (F-L) equation and reciprocity method (RM). In addition, we report up to 10.4 W continuous wave (CW) output with a conversion efficiency of 40% and 10.3 W Q-Switch output with 12.5 kHz pulse repetition rate of diode-pumped cryogenic Tm,Ho:YVO 4 laser. For Q-Switch operation, the minimum pulse width of 28.2 ns is obtained, all of which demonstrate that the Tm,Ho:YVO 4 is excellent laser material for 2 μm radiation.

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

2010-01-01

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We

Evaluation of light-emitting diode beacon light fixtures : final report.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Diffraction-limited 577 nm true-yellow laser by frequency doubling of a tapered diode laser

Science.gov (United States)

Christensen, Mathias; Vilera, Mariafernanda; Noordegraaf, Danny; Hansen, Anders K.; Buß, Thomas; Jensen, Ole B.; Skovgaard, Peter M. W.

2018-02-01

A wide range of laser medical treatments are based on coagulation of blood by absorption of the laser radiation. It has, therefore, always been a goal of these treatments to maximize the ratio of absorption in the blood to that in the surrounding tissue. For this purpose lasers at 577 nm are ideal since this wavelength is at the peak of the absorption in oxygenated hemoglobin. Furthermore, 577 nm has a lower absorption in melanin when compared to green wavelengths (515 - 532 nm), giving it an advantage when treating at greater penetration depth. Here we present a laser system based on frequency doubling of an 1154 nm Distributed Bragg Reflector (DBR) tapered diode laser, emitting 1.1 W of single frequency and diffraction limited yellow light at 577 nm, corresponding to a conversion efficiency of 30.5%. The frequency doubling is performed in a single pass configuration using a cascade of two bulk non-linear crystals. The system is power stabilized over 10 hours with a standard deviation of 0.13% and the relative intensity noise is measured to be 0.064 % rms.

Efficient organic light emitting-diodes (OLEDs)

CERN Document Server

Chang, Yi-Lu

2015-01-01

Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

International Nuclear Information System (INIS)

Coldren, C. W.; Spruytte, S. G.; Harris, J. S.; Larson, M. C.

2000-01-01

Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm 2 for single and triple quantum well active regions, respectively, and emitted light at 1220-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm 2 and efficiencies of 0.066 W/A. (c) 2000 American Vacuum Society

Computer-assisted experiments with a laser diode

Energy Technology Data Exchange (ETDEWEB)

Kraftmakher, Yaakov, E-mail: krafty@mail.biu.ac.il [Department of Physics, Bar-Ilan University, Ramat-Gan 52900 (Israel)

2011-05-15

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10{sup 7} Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.

Computer-assisted experiments with a laser diode

International Nuclear Information System (INIS)

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10 7 Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Overview on new diode lasers for defense applications

Science.gov (United States)

Neukum, Joerg

2012-11-01

Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range market.

Active stabilization of a diode laser injection lock

Energy Technology Data Exchange (ETDEWEB)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

2016-06-15

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Active stabilization of a diode laser injection lock

International Nuclear Information System (INIS)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

International Nuclear Information System (INIS)

Guan Yunxia; Niu Lianbin

2009-01-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq 3 /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

DEFF Research Database (Denmark)

Mesta, Murat; Carvelli, Marco; de Vries, Rein J

2013-01-01

we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

Blue diode laser: a new approach in oral surgery?

Science.gov (United States)

Fornaini, Carlo; Merigo, Elisabetta; Selleri, Stefano; Cucinotta, Annamaria

2016-02-01

The introduction of diode lasers in dentistry had several advantages, principally consisting on the reduced size, reduced cost and possibility to beam delivering by optical fibbers. Up today two diode wavelengths, 810 and 980 nm, were the most utilized in oral surgery but recently a new wavelength emitting in the blue had been proposed. The aim of this ex vivo study was to compare the efficacy of five laser wavelengths (450, 532, 808, 1064 and 1340 nm) for the ablation of soft tissues. Specimens were surgically collected from the dorsal surface of four bovine tongues and irradiated by the five different wavelengths. Thermal increase was measured by two thermocouples, the first at a depth of 0.5 mm, and the second at a depth of 2 mm while initial and final surface temperatures were recorded by IR thermometer. The quality of the incision was histologically evaluated by a pathologist by giving a score from 0 to 5. The time necessary to perform the excision varied between 215 seconds (1340 nm, 5W) and 292 seconds (808 nm, 3W). Surface temperature increase was highest for 1340 nm, 5W and lowest for 405 nm, 4 W. The most significant deep temperature increase was recorded by 1340 nm, 5 W and the lowest by 450 nm, 2 W. The quality of incision was better and the thermal elevation lower in the specimens obtained with shortest laser wavelength (450 nm).

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

Directory of Open Access Journals (Sweden)

N. K. Zhumashev

2016-01-01

Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

International Nuclear Information System (INIS)

Xu, Bing; Zhao, Jun Liang; Dai, Hai Tao; Wang, Shu Guo; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Yu, Sheng-Fu; Sun, Xiao Wei

2014-01-01

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Xu, Bing; Zhao, Jun Liang [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Dai, Hai Tao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Wang, Shu Guo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Chu, Fu-Chuan; Huang, Chou-Hsiung [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Yu, Sheng-Fu [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Sun, Xiao Wei, E-mail: xwsun@sustc.edu.cn [South University of Science and Technology of China, Shenzhen, Guangdong (China)

2014-01-31

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment.

Characterization of High-power Quasi-cw Laser Diode Arrays

Science.gov (United States)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Resonance ionization mass spectrometry using tunable diode lasers

International Nuclear Information System (INIS)

Shaw, R.W.; Young, J.P.; Smith, D.H.

1990-01-01

Tunable semiconductor diode lasers will find many important applications in atomic spectroscopy. They exhibit the desirable attributes of lasers: narrow bandwidth, tunability, and spatial coherence. At the same time, they possess few of the disadvantages of other tunable lasers. They require no alignment, are simple to operate, and are inexpensive. Practical laser spectroscopic instruments can be envisioned. The authors have applied diode lasers to resonance ionization mass spectrometry (RIMS) of some of the lanthanide elements. Sub-Doppler resolution spectra have been recorded and have been used for atomic hyperfine structure analysis. Isotopically-selective ionization has been accomplished, even in cases where photons from a broadband dye laser are part of the overall ionization process and where the isotopic spectral shift is very small. A convenient RIMS instrument for isotope ratio measurements that employs only diode lasers, along with electric field ionization, should be possible

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

The effect of various microlens parameters such as diameter and area fraction on light-extraction efficiency was systematically studied. Improvement of 4% in extraction efficiency was obtained by employing it on white light emitting diode. The area fraction of microlenses was increased up to 0.34 by reducing the spin speed.

Tuning the colour of white polymer light emitting diodes

NARCIS (Netherlands)

Kok, M.M. de; Sarfert, W.; Paetzold, R.

2010-01-01

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

KAUST Repository

Shen, Chao

2017-01-30

A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

2017-01-01

A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

Development of Strain-Induced Quantum Well Intermixing Technique on InGaP/InAlGaP Laser Structures and Demonstration of First Orange Laser Diode

KAUST Repository

Al-Jabr, Ahmad Ali

2016-08-01

Laser Diodes (LD) have numerous applications for industry, military, medicine and communications. The first visible LD was invented in 1962 by Nick Holonyak, emitted at 710 nm (red). In 1990s, Shuji Nakamura invented the blue and green Light Emitting Diodes (LED) and later LDs. The production of LDs emitting between 532- 632 nm has been severely lagging behind the rest of the visible spectrum. Yellow and orange LDs are still not accessible due to the lack of successfully grown material with high optical efficiency. AlGaInP is the quaternary compound semiconductor used to grow green to red LEDs and red LDs. At a material composition that is supposed to lase below 630 nm, the optical efficiency becomes low due to the oxygen-related defects associated with high Al content. The quantum well intermixing (QWI) is a post-growth process that is applied to laser structure to tune the wavelength of laser. Until now, there are limited reports on successful intermixing of InGaP/InAlGaP laser structures while maintaining the crystal quality. In this work, we introduced a novel intermixing process that utilizes the high strain induced by the dielectric film during annealing to initiate the intermixing. We deposited SiO2 capping by plasma-enhanced chemical vapor deposition (PECVD) onto the InGaP/InAlGaP laser structure emitting at 635 nm, and then annealed the structure up to 950 Celsius for different periods of time, resulting in an astonishing 100 nm blueshift. This blueshift allowed us to produce an unprecedented shorter wavelength orange lasers emitting at 608 nm. For low degree of intermixing, we have noticed an increase in the intensity of the photoluminescence (PL) signal. The improvement in the PL signal was translated to a reduction in threshold current. We implemented the technique on an LED structure with Al-rich QWs emitting at 590 nm. Significant increase in the PL intensity (20 folds) was observed. By analyzing the improved structure, we observed reduction in oxygen

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

Energy Technology Data Exchange (ETDEWEB)

Guan Yunxia; Niu Lianbin [Key Laboratory of Optical Engineering, College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China)], E-mail: gyxybsy@126.com, E-mail: niulb03@126.com

2009-03-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq{sub 3} /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

Science.gov (United States)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

Effect of laser-diode light on growth of Lactuca sativa L

International Nuclear Information System (INIS)

Yamazaki, A.; Tsuchiya, H.; Miyajima, H.; Honma, T.; Kan, H.

2000-01-01

Development of an effective, high-power, low-cost, artificial light source for use in plant-growing facilities would be very beneficial for plant production. Recently, the laser-diode lamp was proposed as a new type of light source for plant production. The advantages of the laser-diode lamp over conventional light sources are its high electrical-to-optical power conversion efficiency, low thermal radiation, easy set-up for high power and pulse irradiation, small weight and small volume for mounting, and selectivity for proper wavelength. Because laser light itself differs from the light sources presently used in plant growing, we confirmed the possibility of growing plants under the laser-diode light using lettuces. Lettuce seedlings with 5-6 leaves were grown under a laser-diode lamp panel with 30 pieces of high-power and high-efficiency AlGaInP laser-diodes. The power of each laser-diode lamp was 500 mW, and the wavelength was 680 nm, which was efficient for photosynthesis. The lettuce plants were able to grow under the laser-diode light. However, plants were lighter and had thinner leaves than those grown under high-pressure sodium lamps. (author)

Simplified atom trap using a single microwave modulated diode laser

International Nuclear Information System (INIS)

Newbury, N.R.; Myatt, C.J.; Wieman, C.E.

1993-01-01

We have demonstrated microwave modulation of a diode laser which is operated with optical feedback from a diffraction grating. By directly modulating the diode laser current at frequencies up to 6.8 GHz, we observed 2-30% of the laser power in a single sideband for 20mW of microwave power. Using such a diode laser modulated at 6.6GHz, we have trapped 87 Rb in a vapor cell. With 10mW of microwave power, the number of trapped atoms was only 15% smaller than the number obtained using two lasers in the conventional manner. A microwave modulated diode laser should also be useful for driving stimulated Raman transitions between the hyperfine levels of Rb or Cs

InAs(PSb)-based ``W'' quantum well laser diodes emitting near 3.3 μm

Science.gov (United States)

Joullié, A.; Skouri, E. M.; Garcia, M.; Grech, P.; Wilk, A.; Christol, P.; Baranov, A. N.; Behres, A.; Kluth, J.; Stein, A.; Heime, K.; Heuken, M.; Rushworth, S.; Hulicius, E.; Simecek, T.

2000-05-01

Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K.

Stopping atoms with diode lasers

International Nuclear Information System (INIS)

Watts, R.N.; Wieman, C.E.

1986-01-01

The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

Atom probe tomography of a commercial light emitting diode

International Nuclear Information System (INIS)

Larson, D J; Prosa, T J; Olson, D; Lawrence, D; Clifton, P H; Kelly, T F; Lefebvre, W

2013-01-01

The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A. [Novosibirsk State Technical University (Russian Federation); Shamirzaev, T. S. [Russian Academy of Science, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2016-11-15

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio; Iveland, Justin; Peretti, Jacques; Speck, James S.

2015-01-01

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

Characterization of diode-laser stacks for high-energy-class solid state lasers

Science.gov (United States)

Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

2014-03-01

In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

Direct diode lasers and their advantages for materials processing and other applications

Science.gov (United States)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test.

Science.gov (United States)

Chen, Qi; Chen, Quan; Luo, Xiaobing

2014-09-01

In recent years, due to the fast development of high power light-emitting diode (LED), its lifetime prediction and assessment have become a crucial issue. Although the in situ measurement has been widely used for reliability testing in laser diode community, it has not been applied commonly in LED community. In this paper, an online testing method for LED life projection under accelerated reliability test was proposed and the prototype was built. The optical parametric data were collected. The systematic error and the measuring uncertainty were calculated to be within 0.2% and within 2%, respectively. With this online testing method, experimental data can be acquired continuously and sufficient amount of data can be gathered. Thus, the projection fitting accuracy can be improved (r(2) = 0.954) and testing duration can be shortened.

Mode-locked solid state lasers using diode laser excitation

Science.gov (United States)

Holtom, Gary R [Boston, MA

2012-03-06

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

A novel diode laser system for photodynamic therapy

DEFF Research Database (Denmark)

Samsøe, E.; Andersen, P. E.; Petersen, P.

2001-01-01

In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Science.gov (United States)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Computer Processing Of Tunable-Diode-Laser Spectra

Science.gov (United States)

May, Randy D.

1991-01-01

Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

Generation conditions of CW Diode Laser Sustained Plasma

Science.gov (United States)

Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

2016-09-01

Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Science.gov (United States)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

Science.gov (United States)

2012-09-01

Optics Letters, 28(23):2336–2338, 2003. 48. Lavan, M. “High Energy Laser Systems for Short Range Defense”. Acta Physica Polonica -Series A General Physics...able diode laser spectrometer for the remote sensing of vehicle emissions”. Spec- trochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 60...P. “A review of recent advances in semiconductor laser based gas mon- itors”. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 54

Room temperature diode-pumped Yb:CaYAlO4 laser with near quantum limit slope efficiency

International Nuclear Information System (INIS)

Tan, W D; Tang, D Y; Zhang, J; Xu, C W; Cong, Z H; Xu, X D; Li, D Z; Xu, J

2011-01-01

The room temperature continuous wave (CW) laser performance of a compact Yb:CaYAlO 4 (Yb:CYA) laser with near quantum limit slope efficiency is demonstrated. Pumped with a CW diode operating at 979 nm, the laser emitted a maximum CW output power of 2.3 W at 1050 nm. The corresponding slope efficiency was found to be 92% while the optical to optical conversion efficiency was 70%. The laser can also be continuously tuned from 1008 nm to 1063 nm using an intra-cavity SF 10 prism. The round trip cavity losses of Yb:CYA was 0.6% while the loss coefficient of the crystal was 0.01 cm -1

Distributed-feedback single heterojunction GaAs diode laser

International Nuclear Information System (INIS)

Scifres, D.R.; Burnham, R.D.; Streifer, W.

1974-01-01

Laser operation of single-heterojunction GaAl As/GaAs diode lasers using a periodic structure within the gain medium of the device, thereby obviating the need for carefully cleaved end crystal faces to produce feedback, is reported. By varying the grating period, wavelengths from 8430 to 8560 A were observed. The threshold current densities were of the same order as for normal single heterojunction diode lasers. Some advantages in output wavelengths were observed over lasers with cleared faces. (U.S.)

Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

Science.gov (United States)

Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

2013-05-06

We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

V-shaped resonators for addition of broad-area laser diode arrays

Science.gov (United States)

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

5.5nm wavelength-tunable high-power MOPA diode laser system at 971 nm

Science.gov (United States)

Tawfieq, Mahmoud; Müller, André; Fricke, Jörg; Della Casa, Pietro; Ressel, Peter; Ginolas, Arnim; Feise, David; Sumpf, Bernd; Tränkle, Günther

2018-02-01

In this work, a widely tunable hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W of output power at 971.8 nm will be presented. The MO is a DBR laser, with a micro heater embedded on top of the DBR grating for wavelength tunability. The emitted light of the MO is collimated and coupled into a tapered amplifier using micro cylindrical lenses, all constructed on a compact 25 mm × 25 mm conduction cooled laser package. The MOPA system emits light with a measured spectral width smaller than 17 pm, limited by the spectrometer, and with a beam propagation factor of M2 1/e2 = 1.3 in the slow axis. The emission is thus nearly diffraction limited with 79% of the total power within the central lobe (4.9 W diffraction limited). The electrically controlled micro-heater provides up to 5.5 nm of wavelength tunability, up to a wavelength of 977.3 nm, while maintaining an output power variation of only +/- 0.16 % for the entire tuning range.

Effects of blue diode laser (445 nm) and LED (430-480 nm) radiant heat treatments on dental glass ionomer restoratives

Science.gov (United States)

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2018-02-01

The purpose of this in vitro study was to evaluate the effect of two radiant heat treatments on water sorption, solubility and surface roughness of three conventional glass ionomer cements by using a blue diode laser (445 nm) and a light emitting diode (LED) unit (430-480 nm). Thirty disk-shaped specimens were prepared for each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: Group 1 was the control group, in Group 2 the specimens were irradiated for 60 s at the top surface using a LED light-curing unit and in Group 3 the specimens were irradiated for 60 s at the top surface using a blue light diode laser. Statistical analysis was performed using one-way ANOVA and Tukey post hoc tests at a level of significance of a = 0.05. Radiant heat treatments with both laser and LED devices significantly decreased water sorption and solubility (p tested GICs. Blue diode laser treatment was seemed to be more effective compared to LED treatment for some of the tested materials. There were no changes in surface roughness of the GICs after the treatments (p > 0.05). Among the tested materials there were differences in water sorption and solubility (p 0.05). The use of the blue diode laser for this radiant heat treatment was harmless for the surface of the tested GICs and may be advantageous for the longevity of their restorations.

Diode Laser Excision of Oral Benign Lesions.

Science.gov (United States)

Mathur, Ena; Sareen, Mohit; Dhaka, Payal; Baghla, Pallavi

2015-01-01

Lasers have made tremendous progress in the field of dentistry and have turned out to be crucial in oral surgery as collateral approach for soft tissue surgery. This rapid progress can be attributed to the fact that lasers allow efficient execution of soft tissue procedures with excellent hemostasis and field visibility. When matched to scalpel, electrocautery or high frequency devices, lasers offer maximum postoperative patient comfort. Four patients agreed to undergo surgical removal of benign lesions of the oral cavity. 810 nm diode lasers were used in continuous wave mode for excisional biopsy. The specimens were sent for histopathological examination and patients were assessed on intraoperative and postoperative complications. Diode laser surgery was rapid, bloodless and well accepted by patients and led to complete resolution of the lesions. The excised specimen proved adequate for histopathological examination. Hemostasis was achieved immediately after the procedure with minimal postoperative problems, discomfort and scarring. We conclude that diode lasers are rapidly becoming the standard of care in contemporary dental practice and can be employed in procedures requiring excisional biopsy of oral soft tissue lesions with minimal problems in histopathological diagnosis.

Integrated power conditioning for laser diode arrays

International Nuclear Information System (INIS)

Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

1995-01-01

This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

Transcanalicular laser dacryocystorhinostomy using low energy 810 nm diode laser

Directory of Open Access Journals (Sweden)

Sanjiv K Gupta

2012-01-01

Conclusions: Transcanalicular Laser DCR can be safely performed using a low power 810 nm diode laser. The surgery is elegant, minimally invasive, allows fast rehabilitation, and has an excellent success rate.

Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

Science.gov (United States)

Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

2017-07-01

We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

KAUST Repository

Park, Jihoon; Kim, Eugene

2015-01-01

© 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method

Interference phenomenon determines the color in an organic light emitting diode

Science.gov (United States)

Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

1997-06-01

We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya

2017-05-08

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya; Ng, Tien Khee; Zhao, Chao; Janjua, Bilal; Alyamani, Ahmed; El-desouki, Munir; Ooi, Boon S.

2017-01-01

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

Synergistic skin heat shock protein expression in response to combined laser treatment with a diode laser and ablative fractional lasers.

Science.gov (United States)

Paasch, Uwe; Sonja, Grunewald; Haedersdal, Merete

2014-06-01

Diode laser-based skin heating has been shown to minimise scars by interfering with wound healing responses through the induction of heat shock proteins (HSP). HSP are also induced after ablative fractional laser (AFXL) wound healing. AFXL itself is highly recommended for scar treatment. Therefore, the sequential combination of both modalities may produce superior outcomes. The aim of this study was to examine the pretreatment effects of a diode laser before AFXL on wound healing responses in terms of HSP up-regulation in an in vitro model. Immediate responses and responses on days 1, 3 or 6 post-procedure were studied in an in vitro porcine skin model (n = 240). Untreated samples served as control. Immunohistochemical investigation (Hsp70) was performed in all untreated controls, diode laser-, AFXL-, and in diode laser + AFXL-treated samples. Hsp70 was shown to be up-regulated by all interventions between days 1 and 6 after interventions. The largest effect was caused by the combination of a diode laser and an AFXL procedure. Diode laser exposure induces a skin HSP response that can be further enhanced by sequential AFXL treatment. Clinical studies are necessary to investigate the dose response of HSP on scar formation and refine suitable laser exposure settings.

High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

KAUST Repository

Shen, Chao

2016-01-25

To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

KAUST Repository

Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Oubei, Hassan M.; Alias, Mohd Sharizal; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

2016-01-01

To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

Science.gov (United States)

Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

2018-02-01

Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

Direct-current polarization characteristics of various AlGaAs laser diodes

Science.gov (United States)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Diode-pumped Tm:YAP/YVO4 intracavity Raman laser

International Nuclear Information System (INIS)

Zhao, Jiaqun; Zhou, Xiaofeng; Wang, Guodong; Cheng, Ping; Xu, Feng

2017-01-01

The laser performance based on YVO 4 Raman conversion in a diode-pumped actively Q-switched Tm:YAP laser is demonstrated for the first time. With an incident diode power of 10.9 W and a pulse repetition rate of 1 kHz, the average output powers for the first Stokes laser at 2.4 μm is about 270 mW. (paper)

Tunable high-power narrow-linewidth green external-cavity GaN diode laser

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

International Nuclear Information System (INIS)

Coenen, Michiel J.J.; Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M.; Groen, Pim

2015-01-01

Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

Science.gov (United States)

Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2017-05-09

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

Science.gov (United States)

Chondroudis, Konstantinos; Mitzi, David B.

2000-01-01

The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

Diode lasers and their applications in spectrometry

International Nuclear Information System (INIS)

Pavone, F.S.

1997-01-01

The impact of semiconductor diode laser in different fields ranging from communications to spectroscopy is becoming huge and pushes the research into developing sources satisfying the different requirements. For applications related to trace gas detection, the low amplitude noise in the light source of semiconductor diode laser is sufficient to obtain interesting results. Trace gas of molecular species as methane is interesting for different reason: it plays an important role in both radiative transport an photochemistry in the atmosphere

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

Science.gov (United States)

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

A comparative evaluation: Oral leukoplakia surgical management using diode laser, CO2 laser, and cryosurgery.

Science.gov (United States)

Natekar, Madhukar; Raghuveer, Hosahallli-Puttaiah; Rayapati, Dilip-Kumar; Shobha, Eshwara-Singh; Prashanth, Nagesh-Tavane; Rangan, Vinod; Panicker, Archana G

2017-06-01

The comparatively evaluate the three surgical treatment modalities namely cryosurgery, diode and CO2 laser surgery in terms of healing outcomes on the day of surgery, first and second week post operatively and recurrence at the end of 18 months was assessed. Thirty selected patients were divided randomly into three groups. Each group comprising of ten patients were subjected to one of the three modalities of treatment namely cryosurgery, diode laser or CO2 laser surgery for ablation of OL. Obtained data was analyzed using mainly using Chi-square and Anova tests. Study showed statistical significant differences (p > 0.05) for evaluation parameters like pain, edema and scar. The parameters like infection, recurrence, bleeding showed no statistical significance. Pain was significantly higher in CO2 laser surgery group as compared with diode laser group. There was no recurrence observed at the end of the 6 months follow up period in all the three study groups. Observations from the study highlights that all three surgical modalities used in this study were effective for treatment of OL, and the overall summation of the results of the study showed that laser therapy (CO2 and Diode) seems to offer better clinically significant results than cryotherapy. Key words: Oral premalignant lesion, leukoplakia, cryosurgery, CO2 laser surgery, diode laser surgery.

High Intensity Organic Light-emitting Diodes

Science.gov (United States)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

International Nuclear Information System (INIS)

Tian Hua; Qiu Kun; Song Jun; Wang Da-Jian; Liu Ji-Wen

2012-01-01

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400–700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic “remote-phosphor” color conversion

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Comparison of a novel high-power blue diode laser (λ=442 nm) with Ho:YAG (λ=2100 nm), Tm fiber (λ=1940 nm), and KTP (λ=532 nm) lasers for soft tissue ablation

Science.gov (United States)

Vinnichenko, Victoriya; Kovalenko, Anastasiya; Arkhipova, Valeriya; Yaroslavsky, Ilya; Altshuler, Gregory; Gapontsev, Valentin

2018-02-01

Three lasers were directly compared, including the Ho:YAG laser (λ = 2100 nm), Tm fiber laser (λ = 1940 nm) operating in 3 different modes (CW, regular pulse, and super pulse), and blue diode laser (λ = 442 nm) for vaporization and coagulation efficiency for treating blood-rich soft tissues, ex vivo, in a porcine kidney model at quasi-contact cutting in water. In addition, experimental results were compared with published data on performance of KTP laser (λ = 532 nm) at similar experimental settings (Power = 60 W and cutting speed = 2 mm/s). Tm fiber laser in pulsed mode and blue laser produced highest vaporization rates of 3.7 and 3.4 mm3/s, respectively. Tm fiber laser (in both CW and pulsed modes) also produced the largest coagulation zone among the laser sources tested. A carbonization zone was observed for Tm fiber laser in CW and pulsed modes, as well as for the blue diode laser. Tm fiber laser in super-pulse mode and Ho:YAG laser both resulted in irregular coagulation zones without carbonization. Comparison with known data for KTP laser revealed that tissue effects of the blue laser are similar to that of the KTP laser. These results suggest that the combination of the two lasers (Tm fiber and blue diode) in one system may achieve high cutting efficiency and optimal coagulation for hemostasis during surgical treatment. Ex vivo testing of the combined system revealed feasibility of this approach. The combination of the CW Tm fiber laser (120W) and the blue diode laser (60W) emitting through a combination tip were compared with CW 120 W Tm fiber laser alone and 120 W Ho:YAG laser. Vaporization rates measured 34, 28, and 6 mm3/s, and coagulation zones measured 0.6, 1.3, and 1.7 mm, respectively. A carbonization zone was only observed with CW Tm fiber laser. The vaporization rate of combined CW Tm fiber laser / blue diode laser was comparable to published data for KTP laser for equivalent total power. Thus, high-power blue diode laser, Tm fiber laser, and

Diode laser prostatectomy (VLAP): initial canine evaluation

Science.gov (United States)

Kopchok, George E.; Verbin, Chris; Ayres, Bruce; Peng, Shi-Kaung; White, Rodney A.

1995-05-01

This study evaluated the acute and chronic effects of diode laser (960 nm) prostatectomy using a Prolase II fiber in a canine model (n equals 5). The laser fiber consists of a 1000 um quartz fiber which reflects a cone of laser energy, at 45 degree(s) to the axis of the fiber, into the prostatic urethra (Visual Laser Ablation of Prostate). Perineal access was used to guide a 15.5 Fr cystoscope to the level of the prostate. Under visual guidance and continual saline irrigation, 60 watts of laser power was delivered for 60 seconds at 3, 9, and 12 o'clock and 30 seconds at the 6 o'clock (posterior) positions for a total energy fluence of 12,600 J. One prostate received an additional 60 second exposure at 3 and 9 o'clock for a total fluence of 19,800 J. The prostates were evaluated at one day (n equals 1) and 8 weeks (n equals 4). The histopathology of laser effects at one day show areas of necrosis with loss of glandular structures and stromal edema. Surrounding this area was a zone of degenerative glandular structures extending up to 17.5 mm (cross sectional diameter). The histopathology of the 8 week laser treated animals demonstrated dilated prostatic urethras with maximum cross- sectional diameter of 23.4 mm (mean equals 18.5 +/- 3.9 mm). This study demonstrates the effectiveness of diode laser energy for prostatic tissue coagulation and eventual sloughing. The results also demonstrate the safety of diode laser energy, with similar tissue response as seen with Nd:YAG laser, for laser prostatectomy.

Development and optimization of a diode laser for photodynamic therapy.

Science.gov (United States)

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Comparison of diode laser and Er:YAG lasers in the treatment of ankyloglossia.

Science.gov (United States)

Aras, Mutan Hamdi; Göregen, Mustafa; Güngörmüş, Metin; Akgül, Hayati Murat

2010-04-01

The purpose of this study was to compare the tolerance of lingual frenectomy with regard to a local anesthesia requirement and comparison of postsurgical discomfort experienced by patients operated on with both diode and erbium:yttrium-aluminium-garnet (Er:YAG) lasers. Ankyloglossia, commonly known as tongue-tie, is a congenital oral anomaly characterized by a short lingual frenulum. A short lingual frenulum may contribute to feeding, speech, and mechanical tongue problems. Sixteen referred patients with tongue mobility complaints were included in this study. A GaAlAs laser device with a continuous wavelength of 808 nm was used in the diode group. Frenulums were incised by applying 2 W of laser power. The Er:YAG laser device with a continuous wavelength of 2940 nm was used in the Er:YAG group. Frenulums were incised by applying 1 W of laser power. The acceptability of the lingual frenectomy without local anesthesia and the degree of the postsurgical discomfort were evaluated. Although the majority of patients (six) could be operated on without local anesthesia in the Er:YAG group, all patients could not be operated on without local anesthetic agent in the diode group. There were no differences between the two groups with regard to pain, chewing, and speaking on the first or seventh day after surgery, whereas patients had more pain in the Er:YAG group than in the diode group the first 3 h after surgery. The results indicate that only the Er:YAG laser can be used for lingual frenectomy without local anesthesia, and there was no difference between the two groups regarding the degree of the postsurgical discomfort except in the first 3 h. In conclusion, these results indicate that the Er:YAG laser is more advantageous than the diode laser in minor soft-tissue surgery because it can be performed without local anesthesia and with only topical anesthesia.

Sialolith removal in the submandibular region using surgical diode laser: report of two cases and literature review.

Science.gov (United States)

Haas, Orion Luiz; Scolari, Neimar; da Silva Meirelles, Lucas; Favoretto, André Xavier; de Oliveira, Rogério Belle

2018-03-01

Sialolithiasis is defined as the presence of one or more calcified structures within the duct of a major or minor salivary gland. It occurs as a result of deposition of calcium salts around an accumulation of organic debris in the duct lumen. The main signs and symptoms are edema and bacterial infection with abscess formation. This study aimed to report two cases of submandibular sialolithiasis treated surgically with diode laser and conduct a review of the literature by means of a systematic search. In the two cases, the calculi were located in the distal part of the submandibular duct and could be palpated intraorally. Surgery was performed in an outpatient setting under local anesthesia. A linear incision was made in the floor of the mouth, in the region of the opening of Wharton's duct, to expose and remove the calculi. Laser cutting was performed using a diode laser module coupled to a 400-μm optical fiber emitting at a wavelength of 980 nm (infrared), 2.5 W output power, and in continuous pulse mode. The use of diode laser is a safe and minimally invasive option for this type of procedure. Offering advantages such as enhanced coagulation properties and high-quality incision, absence of bleeding, low risk of nerve damage, and few comorbidities.

Compact blue laser devices based on nonlinear frequency upconversion

International Nuclear Information System (INIS)

Risk, W.P.

1989-01-01

This paper reports how miniature sources of coherent blue radiation can be produced by using nonlinear optical materials for frequency upconversion of the infrared radiation emitted by laser diodes. Direct upconversion of laser diode radiation is possible, but there are several advantages to using the diode laser to pump a solid-state laser which is then upconverted. In either case, the challenge is to find combinations of nonlinear materials and laser for efficient frequency upconversion. Several examples have been demonstrated. These include intracavity frequency doubling of a diode-pumped 946-nm Nd:YAG laser, intracavity frequency mixing of a 809-nm GaAlAs laser diode with a diode- pumped 1064-nm Nd:YAG laser, and direct frequency doubling of a 994-nm strained-layer InGaAs laser diode

Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

2010-11-01

The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

Light emitting diodes for today's energy conscious world

Energy Technology Data Exchange (ETDEWEB)

Papanier, J

2000-10-01

The role played by light emitting diodes in back lighting, decorative illumination, emergency lighting, and automated signage are described as indicators of the many benefits and advantages of LED technology. The basic principles underlying the functioning of LEDs are explained, including the reasons behind their high efficiency in applications requiring colour. The difference between wattage and lumens is clarified; wattage refers to power consumption, whereas lumens measure brightness or light output, the measure most significant in the case of LEDs.

Recent developments in white light emitting diodes

Science.gov (United States)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Theoretical and experimental aspects of laser cutting with a direct diode laser

Science.gov (United States)

Costa Rodrigues, G.; Pencinovsky, J.; Cuypers, M.; Duflou, J. R.

2014-10-01

Recent developments in beam coupling techniques have made it possible to scale up the power of diode lasers with a laser beam quality suitable for laser cutting of metal sheets. In this paper a prototype of a Direct Diode Laser (DDL) source (BPP of 22 mm-mrad) is analyzed in terms of efficiency and cut performance and compared with two established technologies, CO2 and fiber lasers. An analytical model based on absorption calculations is used to predict the performance of the studied laser source with a good agreement with experimental results. Furthermore results of fusion cutting of stainless steel and aluminium alloys as well as oxygen cutting of structural steel are presented, demonstrating that industrial relevant cutting speeds with high cutting quality can now be achieved with DDL.

Experimental diode laser-assisted microvascular anastomosis.

Science.gov (United States)

Reali, U M; Gelli, R; Giannotti, V; Gori, F; Pratesi, R; Pini, R

1993-05-01

An experimental study to evaluate a diode-laser approach to microvascular end-to-end anastomoses is reported. Studies were carried out on the femoral arteries and veins of Wistar rats, and effective welding of vessel tissue was obtained at low laser power, by enhancing laser absorption with indocyanine green (Cardio-green) solution. The histologic and surgical effects of this laser technique were examined and compared with those of conventional microvascular sutured anastomoses.

Blue laser diode (450 nm) systems for welding copper

Science.gov (United States)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

High Power Diode Lasers with External Feedback: Overview and Prospects

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2012-01-01

In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

Dual-channel amplification in a single-mode diode laser for multi-isotope laser cooling

International Nuclear Information System (INIS)

Booth, James L.; Van Dongen, Janelle; Lebel, Paul; Klappauf, Bruce G.; Madison, Kirk W.

2007-01-01

The output from two grating-stabilized external-cavity diode lasers were injected into a single-mode diode laser. Operating at a wavelength of 780 nm, this laser produced ∼50 mW of power with two main frequency components of the same spectral characteristics of the seed lasers. The power ratio of the amplified components was freely adjustable due to gain saturation, and amplification was observed for frequency differences of the two seed lasers in the range from 73 MHz to 6.6 GHz. This system was used to realize a dual isotope magneto-optic trap (MOT) for rubidium ( 85 Rb and 87 Rb). The resulting position and cloud size of the dual isotope MOT was the same as that of the single species MOTs to within ±10 and ±20 μm, respectively. We also characterized the additional spectral components produced by four wave mixing (FWM) in the diode laser amplifier and utilized a particular FWM sideband to realize hyperfine pumping and subsequent laser trapping of 85 Rb in the absence of a 'repump' laser dedicated to hyperfine pumping

Computer-Assisted Experiments with a Laser Diode

Science.gov (United States)

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The "h/e" ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a…

Power blue and green laser diodes and their applications

Science.gov (United States)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Infrared diode laser spectroscopy

Czech Academy of Sciences Publication Activity Database

Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

2010-01-01

Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

Wavelength stabilized high pulse power laser diodes for automotive LiDAR

Science.gov (United States)

Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

2018-03-01

Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

International Nuclear Information System (INIS)

Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

2009-01-01

The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, Martijn; Nicolai, Herman T.; Lenes, Martijn; Wetzelaer, Gert-Jan A. H.; Lu, Mingtao; Blom, Paul W. M.

2011-01-01

The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

2011-01-01

The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Investigation of phosphorescent blue organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2008-07-01

Recently, rapid development of phosphorescent materials has significantly improved the efficiency of organic light emitting diodes (OLEDs). By using efficient phosphorescent emitter materials white OLEDs with high power efficiency values could be demonstrated. But especially blue phosphorescent devices, due to stability issues, need to be further investigated und optimized. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated and characterized to study the impact of charge carriers on device performance.

Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

Science.gov (United States)

Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

2014-01-27

Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

Method and system for homogenizing diode laser pump arrays

Science.gov (United States)

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

CO2 and diode laser welding of AZ31 magnesium alloy

International Nuclear Information System (INIS)

Zhu Jinhong; Li Lin; Liu Zhu

2005-01-01

Magnesium alloys are being increasingly used in automotive and aerospace structures. Laser welding is an important joining method in such applications. There are several kinds of industrial lasers available at present, including the conventional CO 2 and Nd:YAG lasers as well as recently available high power diode lasers. A 1.5 kW diode laser and a 2 kW CO 2 laser are used in the present study for the welding of AZ31 alloys. It is found that different welding modes exist, i.e., keyhole welding with the CO 2 laser and conduction welding with both the CO 2 and the diode lasers. This paper characterizes welds in both welding modes. The effect of beam spot size on the weld quality is analyzed. The laser processing parameters are optimized to obtain welds with minimum defects

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

National Research Council Canada - National Science Library

Siskaninetz, William

2004-01-01

Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained...

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

Science.gov (United States)

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism.

Science.gov (United States)

Puri, Neerja

2015-01-01

Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum - garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser.

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

Diode-Pumped Thulium (Tm)/Holmium (Ho) Composite Fiber 2.1-Micrometers Laser

Science.gov (United States)

2015-09-01

Schematic of the 800-nm diode pumped Tm/Ho composite fiber laser 8 Under quasi-continuous wave (Q- CW ) pumping conditions of 1-ms duration and a...Fig. 9 (Top) Schematic of the 800-nm diode -pumped Tm/Ho composite fiber laser with outcoupler. (Left) Q- CW laser performance of the Tm/Ho composite...ARL-TR-7452 ● SEP 2015 US Army Research Laboratory Diode -Pumped Thulium (Tm)/Holmium (Ho) Composite Fiber 2.1-μm Laser by G

Diode laser spectroscopy of oxygen electronic band at 760 nm

International Nuclear Information System (INIS)

Lucchesini, A.; De Rosa, M.; Gozzini, S.

1998-01-01

Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

DEFF Research Database (Denmark)

Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.

2016-01-01

Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers......, which allows us to extend the measurement bandwidth to 37.4 THz (1355-1630 nm) at megahertz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy, and in particular it enables us to characterize the dispersion...

How does external feedback cause AlGaAs-based diode lasers to degrade?

DEFF Research Database (Denmark)

Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

2013-01-01

The effect of external feedback on the degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is studied. For this purpose, early stages of gradual degradation are induced by accelerated aging at high power levels. While the quantum well that actually experiences the highest...... total optical load remains unaffected, severe impact by point defects is observed on the cladding layers and the waveguide. Extended defects such as dislocations, however, are not observed in such early stages of degradation, which are accompanied by gradual power loss of a few percent only....

White-light-emitting diode based on a single-layer polymer

Science.gov (United States)

Wang, B. Z.; Zhang, X. P.; Liu, H. M.

2013-05-01

A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

Development of diode-pumped medical solid-state lasers

International Nuclear Information System (INIS)

Kim, Cheol Jung; Kim, Min Suk

2000-09-01

Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively

Development of diode-pumped medical solid-state lasers

Energy Technology Data Exchange (ETDEWEB)

Kim, Cheol Jung; Kim, Min Suk

2000-09-01

Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively.

Endoscopic diode laser therapy for chronic radiation proctitis.

Science.gov (United States)

Polese, Lino; Marini, Lucia; Rizzato, Roberto; Picardi, Edgardo; Merigliano, Stefano

2018-01-01

The purpose of this study is to determine the effectiveness of endoscopic diode laser therapy in patients presenting rectal bleeding due to chronic radiation proctitis (CRP). A retrospective analysis of CRP patients who underwent diode laser therapy in a single institution between 2010 and 2016 was carried out. The patients were treated by non-contact fibers without sedation in an outpatient setting. Fourteen patients (median age 77, range 73-87 years) diagnosed with CRP who had undergone high-dose radiotherapy for prostatic cancer and who presented with rectal bleeding were included. Six required blood transfusions. Antiplatelet (three patients) and anticoagulant (two patients) therapy was not suspended during the treatments. The patients underwent a median of two sessions; overall, a mean of 1684 J of laser energy per session was used. Bleeding was resolved in 10/14 (71%) patients, and other two patients showed improvement (93%). Only one patient, who did not complete the treatment, required blood transfusions after laser therapy; no complications were noted during or after the procedures. Study findings demonstrated that endoscopic non-contact diode laser treatment is safe and effective in CRP patients, even in those receiving antiplatelet and/or anticoagulant therapy.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

Science.gov (United States)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

GreenLight laser vs diode laser vaporization of the prostate: 3-year results of a prospective nonrandomized study.

Science.gov (United States)

Guo, Sanwei; Müller, Georg; Bonkat, Gernot; Püschel, Heike; Gasser, Thomas; Bachmann, Alexander; Rieken, Malte

2015-04-01

Laser vaporization of the prostate is one of the alternatives to transurethral resection of the prostate. Short-term studies report a comparable outcome after laser vaporization with the 532 nm 120-W GreenLight high-performance system (HPS) laser and the 980 nm 200 W high-intensity diode (diode) laser. In this study, we analyzed the intermediate-term results of both techniques. From January 2007 to January 2008, 112 consecutive patients with symptomatic benign prostate enlargement were nonrandomly assigned to treatment with the GreenLight laser or the diode laser. Perioperative parameters, postoperative functional outcome, complications, and the reoperation rate at 3 years were analyzed. Improvement of voiding symptoms (International Prostate Symptom Score, quality-of-life) and micturition parameters (maximum flow rate, postvoid residual volume) showed no significant difference between the HPS group and the diode group. A significantly higher reoperation rate was observed in the diode group in comparison to the HPS group (37.5% vs 8.9%, p=0.0003) due to obstructive necrotic tissue (16.1% vs 0%, p=0.0018), bladder neck stricture (16.1% vs 1.8%, p=0.008), and persisting or recurrent adenoma (5.4% vs 7.1%, p=0.70), respectively. Both lasers lead to comparable improvement of voiding parameters and micturition symptoms. Treatment with the 200 W diode laser led to a significantly higher reoperation rate, which might be attributed to a higher degree of coagulation necrosis. Thus, a careful clinical application of this diode laser type is warranted.

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

Science.gov (United States)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Development of a Laser Induced Fluorescence (LIF) System with a Tunable Diode Laser

International Nuclear Information System (INIS)

Woo, Hyun Jong; Do, Jeong Jun; You, Hyun Jong; Choi, Geun Sik; Lee, Myoung Jae; Chung, Kyu Sun

2005-01-01

The Laser Induced Fluorescence (LIF) is known as one of the most powerful techniques for measurements of ion velocity distribution function (IVDF) and ion temperature by means of Doppler broadening and Doppler shift. The dye lasers are generally used for LIF system with 611.66 nm (in vac.) for Ar ion, the low power diode laser was also proposed by Severn et al with the wavelength of 664.55 nm and 668.61 nm (in vac.) for Ar ion. Although the diode laser has the disadvantages of low power and small tuning range, it can be used for LIF system at the low temperature plasmas. A tunable diode laser with 668.614 nm of center wavelength and 10 GHz mode hop free tuning region has been used for our LIF system and it can be measured the ion temperature is up to 1 eV. The ion temperature and velocity distribution function have been measured with LaB6 plasma source, which is about 0.23 eV with Ar gas and 2.2 mTorr working pressure

Laser lipolysis: skin tightening in lipoplasty using a diode laser.

Science.gov (United States)

Wolfenson, Moisés; Hochman, Bernardo; Ferreira, Lydia Massako

2015-05-01

New devices have been developed for surgical repair of deformities caused by localized fat deposits associated with skin laxity. The use of these devices requires the adoption of safety parameters. The aim of this study was to investigate skin tightening by laser lipolysis, using a dual-wavelength diode laser. This prospective, cross-sectional study was conducted between June of 2008 and July of 2010 with 41 consecutive patients who underwent laser lipolysis to correct contour deformities. Laser lipolysis was performed with a diode laser operating at two wavelengths (924 and 975 nm) controlled independently, and using three different tip lengths, allowing treatment of small, medium, and large areas of adipose tissue. The procedure was performed under local anesthesia in a surgical setting. To calculate the optimal cumulative energy, a total energy dose of 5 kJ/10 × 10-cm skin area was used as a safety parameter to prevent treatment complications. The circumferences of body regions were measured preoperatively, immediately after surgery, and 90 days later. Measurements were compared using the Wilcoxon test at a significance level of 0.05 (p Laser lipolysis results in progressive skin tightening over time. Therapeutic, IV.

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

Diode-pumped solid state laser for inertial fusion energy

International Nuclear Information System (INIS)

Payne, S.A.; Krupke, W.F.; Orth, C.D.

1994-11-01

The authors evaluate the prospect for development of a diode-pumped solid-state-laser driver in an inertial fusion energy power plant. Using a computer code, they predict that their 1 GWe design will offer electricity at 8.6 cents/kW · hr with the laser operating at 8.6% efficiency and the recycled power level at 31%. The results of their initial subscale experimental testbed of a diode-pumped solid state laser are encouraging, demonstrating good efficiencies and robustness

Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes

KAUST Repository

Janjua, Bilal

2017-02-16

White light based on blue laser - YAG: Ce phosphor has the advantage of implementing solid-state lighting and optical wireless communications combined-functionalities in a single lamp. However, the blue light was found to disrupt melatonin production, and therefore the human circadian rhythm in general; while the yellow phosphor is susceptible to degradation by laser irradiation and also lack tunability in color rendering index (CRI). In this investigation, by using a violet laser, which has 50% less impact on circadian response, as compared to blue light, and an InGaN-quantum-disks nanowires-based light-emitting diode (NWs-LED), we address both issues simultaneously. The white light is therefore generated using violet-green-red lasers, in conjunction with a yellow NWs-LED realized using molecular beam epitaxy technique, on titanium-coated silicon substrates. Unlike the conventional quantum-well-based LED, the NWs-LED showed efficiency-droop free behavior up to 9.8 A/cm with peak output power of 400 μW. A low turn-on voltage of ∼2.1 V was attributed to the formation of conducting titanium nitride layer at NWs nucleation site and improved fabrication process in the presence of relatively uniform height distribution. The 3D quantum confinement and the reduced band bending improve carriers-wavefunctions overlap, resulting in an IQE of ∼39 %. By changing the relative intensities of the individual color components, CRI of >85 was achieved with tunable correlated color temperature (CCT), thus covering the desired room lighting conditions. Our architecture provides important considerations in designing smart solid-state lighting while addressing the harmful effect of blue light.

Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes

Science.gov (United States)

Janjua, Bilal; Ng, Tien K.; Zhao, Chao; Anjum, Dalaver H.; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Shen, Chao; Ooi, Boon S.

2017-02-01

White light based on blue laser - YAG: Ce3+ phosphor has the advantage of implementing solid-state lighting and optical wireless communications combined-functionalities in a single lamp. However, the blue light was found to disrupt melatonin production, and therefore the human circadian rhythm in general; while the yellow phosphor is susceptible to degradation by laser irradiation and also lack tunability in color rendering index (CRI). In this investigation, by using a violet laser, which has 50% less impact on circadian response, as compared to blue light, and an InGaN-quantum-disks nanowires-based light-emitting diode (NWs-LED), we address both issues simultaneously. The white light is therefore generated using violet-green-red lasers, in conjunction with a yellow NWs-LED realized using molecular beam epitaxy technique, on titanium-coated silicon substrates. Unlike the conventional quantum-well-based LED, the NWs-LED showed efficiency-droop free behavior up to 9.8 A/cm2 with peak output power of 400 μW. A low turn-on voltage of 2.1 V was attributed to the formation of conducting titanium nitride layer at NWs nucleation site and improved fabrication process in the presence of relatively uniform height distribution. The 3D quantum confinement and the reduced band bending improve carriers-wavefunctions overlap, resulting in an IQE of 39 %. By changing the relative intensities of the individual color components, CRI of >85 was achieved with tunable correlated color temperature (CCT), thus covering the desired room lighting conditions. Our architecture provides important considerations in designing smart solid-state lighting while addressing the harmful effect of blue light.

Efficient and stable laser-driven white lighting

Directory of Open Access Journals (Sweden)

Kristin A. Denault

2013-07-01

Full Text Available Laser-based white lighting offers a viable option as an efficient and color-stable high-power solid-state white light source. We show that white light generation is possible using blue or near-UV laser diodes in combination with yellow-emitting cerium-substituted yttrium aluminum garnet (YAG:Ce or a mixture of red-, green-, and blue-emitting phosphors. A variety of correlated color temperatures (CCT are achieved, ranging from cool white light with a CCT of 4400 K using a blue laser diode to a warm white light with a CCT of 2700 K using a near-UV laser diode, with respective color rendering indices of 57 and 95. The luminous flux of these devices are measured to be 252 lm and 53 lm with luminous efficacies of 76 lm/W and 19 lm/W, respectively. An estimation of the maximum efficacy of a device comprising a blue laser diode in combination with YAG:Ce is calculated and the results are used to optimize the device.

Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

Science.gov (United States)

Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

2014-06-11

Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

Study of photophysical processes in organic light-emitting diodes based on light-emission profile reconstruction

NARCIS (Netherlands)

Carvelli, M.

2012-01-01

Organic light-emitting diodes (OLEDs) are emerging as a promising option for energy-efficient, flexible light sources. A key factor that needs to be measured and controlled is the shape of the emission profile, i.e. the spatial distribution of the emitting excitons across the active layer thickness.

Determination of QW laser diode degradation based on the emission spectrum

Directory of Open Access Journals (Sweden)

Bliznyuk Vladimir

2017-01-01

Full Text Available The possibility of laser diodes degradation control by monitoring of their spectrum is shown. For red and infra-red laser diodes, the time dependence of the radiation spectrum width was obtained.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Science.gov (United States)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Diode-laser-illuminated automotive lamp systems

Science.gov (United States)

Marinelli, Michael A.; Remillard, Jeffrey T.

1998-05-01

We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

Science.gov (United States)

Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

2007-10-15

A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

Science.gov (United States)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Active Stabilization of a Diode Laser Injection Lock

OpenAIRE

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser; Caracteristicas dimensionales de soldadura formadas sobre el acero AISI 1045 mediante la aplicacion del laser diodo de alta potencia

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

2004-07-01

The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs.

Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

Science.gov (United States)

Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

1999-01-01

The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

Color optimization of conjugated-polymer/InGaN hybrid white light emitting diodes by incomplete energy transfer

International Nuclear Information System (INIS)

Chang, Chi-Jung; Lai, Chun-Feng; Madhusudhana Reddy, P.; Chen, Yung-Lin; Chiou, Wei-Yung; Chang, Shinn-Jen

2015-01-01

By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. WLEDs with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs. - Highlights: • Highly efficient white light-emitting diodes (WLEDs) were produced. • Conjugated-polymer/InGaN hybrid WLEDs by incomplete energy transfer mechanism. • WLEDs with high color-rendering index and tunable correlated color temperature. • Polysiloxane encapsulant with superior optical, mechanical and thermal properties

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

Science.gov (United States)

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Role of noise in the diode-laser spectroscopy of the spectral line profile

International Nuclear Information System (INIS)

Nadezhdinskii, Aleksandr I; Plotnichenko, V V; Ponurovskii, Ya Ya; Spiridonov, Maksim V

2000-01-01

Questions concerning precise measurements of the spectral-line-profile parameters by diode-laser spectroscopic methods were examined. The instrumental function of a distributed-feedback diode laser (λ =1.53 μm), consisting of the additive contributions of the noise due to spontaneous emission, frequency fluctuations, and intensity fluctuations, was investigated. An analytical formula was obtained for the spectrum of the diode-laser field formed by frequency fluctuations. The spectral density g 0 of the frequency fluctuations, determining the width of the central part of the emission line profile of a diode laser, was found by two independent methods (by fitting to a Doppler-broadened absorption line profile and by finding the intensity of the residual radiation and the saturated-absorption line width). The parameters Ω and Γ of the spectral density of the frequency fluctuations, coupled to the relaxation oscillations and determining the wing of the diode-laser emission line profile, were determined experimentally. By taking into account the instrumental function of the diode laser, involving successive convolution with the recorded emission spectra, it was possible to reproduce correctly the spectral line profile and to solve accurately the problem of the 'optical zero'. The role of the correlation between the intensity noise and the diode-laser frequency was considered. (laser applications and other topics in quantum electronics)

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

KAUST Repository

Shen, Chao; Ng, Tien Khee; Lee, Changmin; Leonard, John T.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL

Topology optimisation of passive coolers for light-emitting diode lamps

DEFF Research Database (Denmark)

Alexandersen, Joe

2015-01-01

This work applies topology optimisation to the design of passive coolers for light-emitting diode (LED) lamps. The heat sinks are cooled by the natural convection currents arising from the temperature difference between the LED lamp and the surrounding air. A large scale parallel computational....... The optimisation results show interesting features that are currently being incorporated into industrial designs for enhanced passive cooling abilities....

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Ou, Haiyan

Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.......Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure....

Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

Science.gov (United States)

Jiménez, A.; Milde, T.; Staacke, N.; Aßmann, C.; Carpintero, G.; Sacher, J.

2017-07-01

Narrow-linewidth tunable diode lasers are an important tool for spectroscopic instrumentation. Conventional external cavity diode lasers offer high output power and narrow linewidth. However, most external cavity diode lasers are designed as laboratory instrument and do not allow portability. In comparison, other commonly used lasers, like distributed feedback lasers (DFB) that are capable of driving a handheld device, are limited in power and show linewidths which are not sufficiently narrow for certain applications. We present new miniaturized types of tunable external cavity diode laser which overcome the drawbacks of conventional external cavity diode lasers and which preserve the advantages of this laser concept. Three different configurations are discussed in this article. The three types of miniaturized external cavity diode laser systems achieve power values of more than 50 mW within the 1.4 μm water vapor absorption band with excellent side-mode suppression and linewidth below 100 kHz. Typical features outstand with respect to other type of laser systems which are of extended use such as DFB laser diodes. The higher output power and the lower linewidth will enable a higher sensitivity and resolution for a wide range of applications.

Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

Science.gov (United States)

Pilgrim, J. S.; Peterson, K. A.

2001-01-01

Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

Science.gov (United States)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

Science.gov (United States)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Weak-microcavity organic light-emitting diodes with improved light out-coupling.