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Sample records for embedded ferroelectric nanostructure

  1. Synthesis of ferroelectric nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roervik, Per Martin

    2008-12-15

    The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titanium was annealed in the presence of NaCl at 760 degrees Celsius or 820 degrees Celsius. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was

  2. A ferroelectric memory technology for embedded LSI

    CERN Document Server

    Kunio, T

    1999-01-01

    We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. The FeRAM macro has the $9 performance of 10/sup 8/ endurance cycles and is half the size of an EEPROM macro. We have also developed a new CMVP (Capacitor on Meta/Via Stacked Plug) cell for an advanced FeRAM embedded LSI by using 0.25- mu m CMOS technology. $9 The ferroelectric capacitors of this cell are fabricated after the multiple interconnect is formed, and a cell area of 3.2 mu m/sup 2/ is obtained. (8 refs).

  3. Ferroelectric nanostructure having switchable multi-stable vortex states

    Science.gov (United States)

    Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  4. Ferroelectric nanoparticle-embedded sponge structure triboelectric generators

    Science.gov (United States)

    Park, Daehoon; Shin, Sung-Ho; Yoon, Ick-Jae; Nah, Junghyo

    2018-05-01

    We report high-performance triboelectric nanogenerators (TENGs) employing ferroelectric nanoparticles (NPs) embedded in a sponge structure. The ferroelectric BaTiO3 NPs inside the sponge structure play an important role in increasing surface charge density by polarized spontaneous dipoles, enabling the packaging of TENGs even with a minimal separation gap. Since the friction surfaces are encapsulated in the packaged device structure, it suffers negligible performance degradation even at a high relative humidity of 80%. The TENGs also demonstrated excellent mechanical durability due to the elasticity and flexibility of the sponge structure. Consequently, the TENGs can reliably harvest energy even under harsh conditions. The approach introduced here is a simple, effective, and reliable way to fabricate compact and packaged TENGs for potential applications in wearable energy-harvesting devices.

  5. Silicon-embedded copper nanostructure network for high energy storage

    Science.gov (United States)

    Yu, Tianyue

    2016-03-15

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  6. Silicon-embedded copper nanostructure network for high energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Tianyue

    2018-01-23

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  7. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

    International Nuclear Information System (INIS)

    Song, Jingfeng; Lu, Haidong; Gruverman, Alexei; Ducharme, Stephen; Li, Shumin; Tan, Li

    2016-01-01

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics. (paper)

  8. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

    Science.gov (United States)

    Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

    2016-01-08

    Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

  9. Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

    Science.gov (United States)

    Klug, Jeffrey A.

    The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

  10. Carbon Nanotube Embedded Nanostructure for Biometrics.

    Science.gov (United States)

    Park, Juhyuk; Youn, Jae Ryoun; Song, Young Seok

    2017-12-27

    Low electric energy loss is a very important problem to minimize the decay of transferred energy intensity due to impedance mismatch. This issue has been dealt with by adding an impedance matching layer at the interface between two media. A strategy was proposed to improve the charge transfer from the human body to a biometric device by using an impedance matching nanostructure. Nanocomposite pattern arrays were fabricated with shape memory polymer and carbon nanotubes. The shape recovery ability of the nanopatterns enhanced durability and sustainability of the structure. It was found that the composite nanopatterns improved the current transfer by two times compared with the nonpatterned composite sample. The underlying mechanism of the enhanced charge transport was understood by carrying out a numerical simulation. We anticipate that this study can provide a new pathway for developing advanced biometric devices with high sensitivity to biological information.

  11. Giant Electrocaloric Effect in Ferroelectrics with Tailored Polaw-Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qiming [Pennsylvania State Univ., University Park, PA (United States)

    2015-06-24

    Electrocaloric effect (ECE) is the temperature and/or entropy change in a dielectric material caused by an electric field induced polarization change. Although ECE has been studied since 1930s, the very small ECE observed in earlier studies in bulk materials before 2007 makes it not attractive for practical cooling applications. The objectives of this DOE program are to carry out a systematical scientific research on the entropy change and ECE in polar-dielectrics, especially ferroelectrics based on several fundamental hypotheses and to search for answers on a few scientific questions. Especially, this research program developed a series of polar-dielectric materials with controlled nano- and meso-structures and carried out studies on how these structures affect the polar-ordering, correlations, energy landscapes, and consequently the entropy states at different phases and ECE. The key hypotheses of the program include: (i) Whether a large ECE can be obtained near the ferroelectric-paraelectric (FE-PE) transition in properly designed ferroelectrics which possess large polarization P and large ß (the coefficient in the thermodynamic Landau theory where the Gibbs free energy G = G = G0+ ½ a P2 +1/4 b P4 + 1/6 c P6 – EP, and a = ß (T-Tc), where b,c,ß and Tc are constants)? (ii) What determines/determine ß? Whether a ferroelectric material with built-in disorders, which disrupt the polar-correlations and enabling a large number of local polar-states, such as a properly designed ferroelectric relaxor, can achieve a large ECE? (iii) How to design a ferroelectric material which has flat energy landscape so that the energy barriers for switching among different phases are vanishingly small? What are the necessary conditions to maximize the number of coexisting phases? (iv) How to design ferroelectric materials with a large tunable dielectric response? That is, at zero electric field, the material possesses very

  12. Ferroelectric mesocrystals of bismuth sodium titanate: formation mechanism, nanostructure, and application to piezoelectric materials.

    Science.gov (United States)

    Hu, Dengwei; Kong, Xingang; Mori, Kotaro; Tanaka, Yasuhiro; Shinagawa, Kazunari; Feng, Qi

    2013-09-16

    Ferroelectric mesocrystals of Bi0.5Na0.5TiO3 (BNT) with [100]-crystal-axis orientation were successfully prepared using a topotactic structural transformation process from a layered titanate H1.07Ti1.73O4·nH2O (HTO). The formation reactions of BNT mesocrystals in HTO-Bi2O3-Na2CO3 and HTO-TiO2-Bi2O3-Na2CO3 reaction systems and their nanostructures were studied by XRD, FE-SEM, TEM, SAED, and EDS, and the reaction mechanisms were given. The BNT mesocrystals are formed by a topotactic structural transformation mechanism in the HTO-Bi2O3-Na2CO3 reaction system and by a combination mechanism of the topotactic structural transformation and epitaxial crystal growth in the HTO-TiO2-Bi2O3-Na2CO3 reaction system, respectively. The BNT mesocrystals prepared by these methods are constructed from [100]-oriented BNT nanocrystals. Furthermore, these reaction systems were successfully applied to the fabrication of [100]-oriented BNT ferroelectric ceramic materials. A BNT ceramic material with a high degree of orientation, high relative density, and small grain size was achieved.

  13. Fe and Co nanostructures embedded into the Cu(100) surface: Self-Organization and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Kolesnikov, S. V., E-mail: kolesnikov@physics.msu.ru; Klavsyuk, A. L.; Saletsky, A. M. [Moscow State University, Faculty of Physics (Russian Federation)

    2015-10-15

    The self-organization and magnetic properties of small iron and cobalt nanostructures embedded into the first layer of a Cu(100) surface are investigated using the self-learning kinetic Monte Carlo method and density functional theory. The similarities and differences between the Fe/Cu(100) and the Co/Cu(100) are underlined. The time evolution of magnetic properties of a copper monolayer with embedded magnetic atoms at 380 K is discussed.

  14. Ferroelectric Zinc Oxide Nanowire Embedded Flexible Sensor for Motion and Temperature Sensing.

    Science.gov (United States)

    Shin, Sung-Ho; Park, Dae Hoon; Jung, Joo-Yun; Lee, Min Hyung; Nah, Junghyo

    2017-03-22

    We report a simple method to realize multifunctional flexible motion sensor using ferroelectric lithium-doped ZnO-PDMS. The ferroelectric layer enables piezoelectric dynamic sensing and provides additional motion information to more precisely discriminate different motions. The PEDOT:PSS-functionalized AgNWs, working as electrode layers for the piezoelectric sensing layer, resistively detect a change of both movement or temperature. Thus, through the optimal integration of both elements, the sensing limit, accuracy, and functionality can be further expanded. The method introduced here is a simple and effective route to realize a high-performance flexible motion sensor with integrated multifunctionalities.

  15. NOVEL EMBEDDED CERAMIC ELECTRODE SYSTEM TO ACTIVATE NANOSTRUCTURED TITANIUM DIOXIDE FOR DEGRADATION OF MTBE

    Science.gov (United States)

    A novel reactor combining a flame-deposited nanostructured titanium dioxide film and a set of embedded ceramic electrodes was designed, developed and tested for degradation of methyl tert-butyl ether (MTBE) in water. On applying a voltage to the ceramic electrodes, a surface coro...

  16. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

    Science.gov (United States)

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-01

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07377d

  17. On the shear strength of tungsten nano-structures with embedded helium

    International Nuclear Information System (INIS)

    Smirnov, R.D.; Krasheninnikov, S.I.

    2013-01-01

    Modification of plastic properties of tungsten nano-structures under shear stress load due to embedded helium atoms is studied using molecular dynamics modelling. The modelling demonstrates that the yield strength of tungsten nano-structures reduces significantly with increasing embedded helium concentration. At high helium concentrations (>10 at%), the yield strength decreases to values characteristic to the pressure in helium nano-bubbles, which are formed in tungsten under such conditions and thought to be responsible for the formation of nano-fuzz on tungsten surfaces irradiated with helium plasma. It is also shown that tungsten plastic flow strongly facilitates coagulation of helium clusters to larger bubbles. The temperature dependencies of the yield strength are obtained. (letter)

  18. High energy storage capacitor by embedding tunneling nano-structures

    Science.gov (United States)

    Holme, Timothy P; Prinz, Friedrich B; Van Stockum, Philip B

    2014-11-04

    In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

  19. Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V.; Yoon, Jongseung

    2017-04-12

    Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

  20. Apparent vanishing of ferroelectricity in nanostructured BiScO3PbTiO3

    OpenAIRE

    Amorín , H; Jiménez , R; Ricote , J; Hungría , T; Castro , A; Algueró , M

    2010-01-01

    Abstract Nanostructured ceramics of high-temperature piezoelectric 0.375BiScO 3 -0.625PbTiO 3 were prepared by spark plasma sintering of nanocrystalline powders obtained by mechanosynthesis. The macroscopic electrical properties were characterized on dense ceramics with decreasing average grain size down to 28 nm. Results indicate that the electric field is screened by the electrically insulating grain boundaries at the nanoscale, which needs to be considered when discussing size effects i...

  1. Synthesis of Gold Nanoparticle-Embedded Silver Cubic Mesh Nanostructures Using AgCl Nanocubes for Plasmonic Photocatalysis.

    Science.gov (United States)

    Joo, Jang Ho; Kim, Byung-Ho; Lee, Jae-Seung

    2017-11-01

    A novel room-temperature aqueous synthesis for gold nanoparticle-embedded silver cubic mesh nanostructures using AgCl templates via a template-assisted coreduction method is developed. The cubic AgCl templates are coreduced in the presence of AuCl 4 - and Ag + , resulting in the reduction of AuCl 4 - into gold nanoparticles on the outer region of AgCl templates, followed by the reduction of AgCl and Ag + into silver cubic mesh nanostructures. Removal of the template clearly demonstrates the delicately designed silver mesh nanostructures embedded with gold nanoparticles. The synthetic mechanism, structural properties, and surface functionalization are spectroscopically investigated. The plasmonic photocatalysis of the cubic mesh nanostructures for the degradation of organic pollutants and removal of highly toxic metal ions is investigated; the photocatalytic activity of the cubic mesh nanostructures is superior to those of conventional TiO 2 catalysts and they are catalytically functional even in natural water, owing to their high surface area and excellent chemical stability. The synthetic development presented in this study can be exploited for the highly elaborate, yet, facile design of nanomaterials with outstanding properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

    Science.gov (United States)

    Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

    2015-02-04

    In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

  3. A two-stage model of rough-interface scattering for embedded nano-structures

    DEFF Research Database (Denmark)

    Karamehmedovic, Mirza; Hansen, P. E.

    2016-01-01

    We decompose scattering by nanostructures on rough substrates into two surface transfer functions: one heuristic, computed for the bare substrate from experimental BRDF data, and the other sparse and constructed for nanostructures on smooth surfaces. We explore numerically the performance...

  4. Interface engineered ferrite@ferroelectric core-shell nanostructures: A facile approach to impart superior magneto-electric coupling

    Science.gov (United States)

    Abraham, Ann Rose; Raneesh, B.; Das, Dipankar; Oluwafemi, Oluwatobi Samuel; Thomas, Sabu; Kalarikkal, Nandakumar

    2018-04-01

    The electric field control of magnetism in multiferroics is attractive for the realization of ultra-fast and miniaturized low power device applications like nonvolatile memories. Room temperature hybrid multiferroic heterostructures with core-shell (0-0) architecture (ferrite core and ferroelectric shell) were developed via a two-step method. High-Resolution Transmission Electron Microscopy (HRTEM) images confirm the core-shell structure. The temperature dependant magnetization measurements and Mossbauer spectra reveal superparamagnetic nature of the core-shell sample. The ferroelectric hysteresis loops reveal leaky nature of the samples. The results indicate the promising applications of the samples for magneto-electric memories and spintronics.

  5. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    International Nuclear Information System (INIS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-01-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

  6. A facile synthesis of a novel optoelectric material: a nanocomposite of SWCNT/ZnO nanostructures embedded in sulfonated polyaniline

    Directory of Open Access Journals (Sweden)

    Rajesh K. Agrawalla

    2014-07-01

    Full Text Available Functionalized single-walled carbon nanotubes (f-SWCNTs hybridized with freshly prepared zinc oxide (ZnO nanocrystals have been found to be good luminescent material with tuned emission properties. A three-phase nanocomposite of sulfonated polyaniline embedded with such SWCNT/ZnO nanostructures has been prepared by a simple solution mixing chemical process and characterized by using high-resolution transmission electron microscopy, X-ray diffractometry, Raman spectroscopy, Fourier transform infrared spectroscopy, and thermogravimetric analysis. The study of UV-visible absorption and photoluminescence spectroscopies reveal that the ternary polymer nanocomposite is a luminescent material with enhanced emission intensity. Also an increase in DC conductivity indicates that the nanocomposite is also a good conductive material, satisfying Mott’s variable range hopping model for a two-dimensional conduction. Such a three-phase nanocomposite may find extensive application in dye-sensitized solar cells, sensors, and supercapacitors.

  7. Fabrication and characterisation of embedded metal nanostructures by ion implantation with nanoporous anodic alumina masks

    Energy Technology Data Exchange (ETDEWEB)

    Guan, Wei [NanoLAB, Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); School of Physics and Astronomy, University of Edinburgh, Mayfield Road, Edinburgh EH9 3JZ (United Kingdom); Peng, Nianhua, E-mail: n.peng@surrey.ac.uk [Surrey Ion Beam Centre, Surrey University, Guildford GU2 7XH (United Kingdom); Jeynes, Christopher [Surrey Ion Beam Centre, Surrey University, Guildford GU2 7XH (United Kingdom); Ghatak, Jay [NanoLAB, Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Peng, Yong [NanoLAB, Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); School of Physical Science and Technology, Lanzhou University, 222 Tianshui Road, Lanzhou 730000 (China); Ross, Ian M. [Department of Electronic and Electric Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Bhatta, Umananda M.; Inkson, Beverley J.; Möbus, Günter [NanoLAB, Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2013-07-15

    Lateral ordered Co, Pt and Co/Pt nanostructures were fabricated in SiO{sub 2} and Si{sub 3}N{sub 4} substrates by high fluence metal ion implantation through periodic nanochannel membrane masks based on anodic aluminium oxides (AAO). The quality of nanopatterning transfer defined by various AAO masks in different substrates was examined by transmission electron microscopy (TEM) in both imaging and spectroscopy modes.

  8. Electrochemical synthesis of MoS2 quantum dots embedded nanostructured porous silicon with enhanced electroluminescence property

    Science.gov (United States)

    Shrivastava, Megha; Kumari, Reeta; Parra, Mohammad Ramzan; Pandey, Padmini; Siddiqui, Hafsa; Haque, Fozia Z.

    2017-11-01

    In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications.

  9. High electro-catalytic activities of glucose oxidase embedded one-dimensional ZnO nanostructures

    International Nuclear Information System (INIS)

    Sarkar, Nirmal K; Bhattacharyya, Swapan K

    2013-01-01

    One-dimensional ZnO nanorods and nanowires are separately synthesized on Zn substrate by simple hydrothermal processes at low temperatures. Electro-catalytic responses of glucose oxidase/ZnO/Zn electrodes using these two synthesized nanostructures of ZnO are reported and compared with others available in literature. It is apparent the Michaelis–Menten constant, K M app , for the present ZnO nanowire, having a greater aspect ratio, is found to be the lowest when compared with others. This sensor shows lower oxidation peak potential with a long detection range of 6.6 μM–380 mM and the highest sensitivity of ∼35.1 μA cm −2 mM −1 , among the reported values in the literature. Enzyme catalytic efficiency and turnover numbers are also found to be remarkably high. (paper)

  10. Nanostructure Embedded Microchips for Detection, Isolation, and Characterization of Circulating Tumor Cells

    Science.gov (United States)

    2015-01-01

    Conspectus Circulating tumor cells (CTCs) are cancer cells that break away from either a primary tumor or a metastatic site and circulate in the peripheral blood as the cellular origin of metastasis. With their role as a “tumor liquid biopsy”, CTCs provide convenient access to all disease sites, including that of the primary tumor and the site of fatal metastases. It is conceivable that detecting and analyzing CTCs will provide insightful information in assessing the disease status without the flaws and limitations encountered in performing conventional tumor biopsies. However, identifying CTCs in patient blood samples is technically challenging due to the extremely low abundance of CTCs among a large number of hematologic cells. To address this unmet need, there have been significant research endeavors, especially in the fields of chemistry, materials science, and bioengineering, devoted to developing CTC detection, isolation, and characterization technologies. Inspired by the nanoscale interactions observed in the tissue microenvironment, our research team at UCLA pioneered a unique concept of “NanoVelcro” cell-affinity substrates, in which CTC capture agent-coated nanostructured substrates were utilized to immobilize CTCs with high efficiency. The working mechanism of NanoVelcro cell-affinity substrates mimics that of Velcro: when the two fabric strips of a Velcro fastener are pressed together, tangling between the hairy surfaces on two strips leads to strong binding. Through continuous evolution, three generations (gens) of NanoVelcro CTC chips have been established to achieve different clinical utilities. The first-gen NanoVelcro chip, composed of a silicon nanowire substrate (SiNS) and an overlaid microfluidic chaotic mixer, was created for CTC enumeration. Side-by-side analytical validation studies using clinical blood samples suggested that the sensitivity of first-gen NanoVelcro chip outperforms that of FDA-approved CellSearch. In conjunction with

  11. Ferroelectric devices

    CERN Document Server

    Uchino, Kenji

    2009-01-01

    Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

  12. Ferroelectricity in undoped hafnium oxide

    International Nuclear Information System (INIS)

    Polakowski, Patrick; Müller, Johannes

    2015-01-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

  13. Dependence of the carrier mobility and trapped charge limited conduction on silver nanoparticles embedment in doped polypyrrole nanostructures

    Science.gov (United States)

    Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

    2013-10-01

    The present article demonstrates an intensive study upon the temperature dependent current density (J)-voltage (V) characteristics of moderately doped polypyrrole nanostructure and its silver nanoparticles incorporated nanocomposites. Analysis of the measured J-V characteristics of different synthesized nano-structured samples within a wide temperature range revealed that the electrical conduction behavior followed a trapped charge-limited conduction and a transition of charge transport mechanism from deep exponential trap limited conduction to shallow traps limited conduction had been occurred due to the incorporation of silver nanoparticles within the polypyrrole matrix. A direct evaluation of carrier mobility as a function of electric field and temperature from the measured J-V characteristics illustrates that the incorporation of silver nanoparticles within the polypyrrole matrix enhances the carrier mobility at a large extent by reducing the concentration of traps within the polypyrrole matrix. The calculated mobility is consistent with the Poole-Frenkel form for the electrical field up to a certain temperature range. The nonlinear low temperature dependency of mobility of all the nanostructured samples was explained by Mott variable range hopping conduction mechanisms. Quantitative information regarding the charge transport parameters obtained from the above study would help to extend optimization strategies for the fabrication of new organic semiconducting nano-structured devices.

  14. Bi-Component Nanostructured Arrays of Co Dots Embedded in Ni80Fe20 Antidot Matrix: Synthesis by Self-Assembling of Polystyrene Nanospheres and Magnetic Properties.

    Science.gov (United States)

    Coïsson, Marco; Celegato, Federica; Barrera, Gabriele; Conta, Gianluca; Magni, Alessandro; Tiberto, Paola

    2017-08-23

    A bi-component nanostructured system composed by a Co dot array embedded in a Ni 80 Fe 20 antidot matrix has been prepared by means of the self-assembling polystyrene nanospheres lithography technique. Reference samples constituted by the sole Co dots or Ni 80 Fe 20 antidots have also been prepared, in order to compare their properties with those of the bi-component material. The coupling between the two ferromagnetic elements has been studied by means of magnetic and magneto-transport measurements. The Ni 80 Fe 20 matrix turned out to affect the vortex nucleation field of the Co dots, which in turn modifies the magneto-resistance behaviour of the system and its spinwave properties.

  15. Coaxial electrospun aligned tussah silk fibroin nanostructured fiber scaffolds embedded with hydroxyapatite–tussah silk fibroin nanoparticles for bone tissue engineering

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Weili [Key Laboratory of Advanced Textile Composites, Ministry of Education, Institute of Textile Composites, Tianjin Polytechnic University, Tianjin 300387 (China); He, Jianxin, E-mail: hejianxin771117@163.com [College of Textiles, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); Sang, Feng [Department of Acquired Immune Deficiency Syndrome Treatment and Research Center, The First Affiliated Hospital of Henan University of Traditional Chinese Medicine, Zhengzhou 450007 (China); Ding, Bin [College of Textiles, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); Chen, Li, E-mail: chenli@tjpu.edu.cn [Key Laboratory of Advanced Textile Composites, Ministry of Education, Institute of Textile Composites, Tianjin Polytechnic University, Tianjin 300387 (China); Cui, Shizhong; Li, Kejing; Han, Qiming; Tan, Weilin [College of Textiles, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China)

    2016-01-01

    The bone is a composite of inorganic and organic materials and possesses a complex hierarchical architecture consisting of mineralized fibrils formed by collagen molecules and coated with oriented hydroxyapatite. To regenerate bone tissue, it is necessary to provide a scaffold that mimics the architecture of the extracellular matrix in native bone. Here, we describe one such scaffold, a nanostructured composite with a core made of a composite of hydroxyapatite and tussah silk fibroin. The core is encased in a shell of tussah silk fibroin. The composite fibers were fabricated by coaxial electrospinning using green water solvent and were characterized using different techniques. In comparison to nanofibers of pure tussah silk, composite notably improved mechanical properties, with 90-fold and 2-fold higher initial modulus and breaking stress, respectively, obtained. Osteoblast-like MG-63 cells were cultivated on the composite to assess its suitability as a scaffold for bone tissue engineering. We found that the fiber scaffold supported cell adhesion and proliferation and functionally promoted alkaline phosphatase and mineral deposition relevant for biomineralization. In addition, the composite were more biocompatible than pure tussah silk fibroin or cover slip. Thus, the nanostructured composite has excellent biomimetic and mechanical properties and is a potential biocompatible scaffold for bone tissue engineering. - Highlights: • A designing scaffold strategy to imitate the mineralized collagen bundles in natural bone was presented. • Aligned nanostructured composite fibers were fabricated by coaxial electrospinning using green water solvent. • Mechanical properties of aligned TSF nanofiber had been significantly improved by embedding with composite nanoparticles. • Composite scaffolds effectively supported proliferation of MG-63 cells and promoted biomineralization.

  16. Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

    Directory of Open Access Journals (Sweden)

    Ray Samit

    2011-01-01

    Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

  17. Excitation of epsilon-near-zero resonance in ultra-thin indium tin oxide shell embedded nanostructured optical fiber.

    Science.gov (United States)

    Minn, Khant; Anopchenko, Aleksei; Yang, Jingyi; Lee, Ho Wai Howard

    2018-02-05

    We report a novel optical waveguide design of a hollow step index fiber modified with a thin layer of indium tin oxide (ITO). We show an excitation of highly confined waveguide mode in the proposed fiber near the wavelength where permittivity of ITO approaches zero. Due to the high field confinement within thin ITO shell inside the fiber, the epsilon-near-zero (ENZ) mode can be characterized by a peak in modal loss of the hybrid waveguide. Our results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided core mode to the thin-film ENZ mode. We also show that the phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents inside the central bore of the fiber. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

  18. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  19. Multiscale Study of Barium Titanate Nanostructures and Nanocomposites

    Science.gov (United States)

    Louis, Lydie

    Advancements in integrated nanoelectronics will continue to require the use of unique materials or systems of materials with diverse functionalities in increasingly confined spaces. Hence, research on finite-dimensional systems strive to unearth and expand the knowledge of fundamental physical properties in certain key materials which exhibit numerous concurrent and exploitable functions. Correspondingly, ferroelectric nanostructures, which particularly display a plethora of complex phenomena, prevalent in countless fields of research, are noteworthy candidates. Presently, however, the assimilation of zero-(0D) and one-dimensional (1D) ferroelectric into micro- or nano-electronics has been lagging, in part due to a lack of applied and fundamental studies but also due to the paucity of synthetic strategies yielding high quality monocrystalline structures. In this work, the problematics of size reduction, which affects many aspects of electronic devices, was addressed. Furthermore, the depolarizing effects associated with finite thickness in ferroelectric nanostructures was investigated in connection with other crucial boundary conditions. The work reported in this dissertation concerned isolated 0D and 1D BaTiO3 nanocrystals and nanocomposites composed of periodic arrays of BaTiO 3 nanowires embedded in a matrix formed by another ferroelectric material. A systematic investigation was conducted for those three types of nanostructures from a quantum mechanical and atomistic perspective using both direct-first-principles and first-principles-derived methods. Using first-principles-based calculations, the structural phase sequences in 0D (cubic-to-tetragonal-to-monoclinic-to-rhombohedral) and 1D (cubic-to-tetragonal-to-orthorhombic-to-monoclinic) BaTiO3 nanoparticles revealed differences from that of the bulk and thin film systems. The monoclinic symmetry found in the 0D compounds, and as for the ground-state of 1D systems, were also affected by size effects and tuned

  20. Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

    Science.gov (United States)

    Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

    2017-11-01

    Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  1. Nanostructured piezoelectric energy harvesters

    CERN Document Server

    Briscoe, Joe

    2014-01-01

    This book covers a range of devices that use piezoelectricity to convert mechanical deformation into electrical energy and relates their output capabilities to a range of potential applications. Starting with a description of the fundamental principles and properties of piezo- and ferroelectric materials, where applications of bulk materials are well established, the book shows how nanostructures of these materials are being developed for energy harvesting applications. The authors show how a nanostructured device can be produced, and put in context some of the approaches that are being invest

  2. Synthesis, characterization, properties, and applications of nanosized ferroelectric, ferromagnetic, or multiferroic materials

    International Nuclear Information System (INIS)

    Dhak, Debasis; Das, Soma; Communication Engineering.); Dhak, Prasanta

    2015-01-01

    Recently, there has been an enormous increase in research activity in the field of ferroelectrics and ferromagnetics especially in multiferroic materials which possess both ferroelectric and ferromagnetic properties simultaneously. However, the ferroelectric, ferromagnetic, and multiferroic properties should be further improved from the utilitarian and commercial viewpoints. Nanostructural materials are central to the evolution of future electronics and information technologies. Ferroelectrics and ferromagnetics have already been established as a dominant branch in electronics sector because of their diverse applications. The ongoing dimensional downscaling of materials to allow packing of increased numbers of components into integrated circuits provides the momentum for evolution of nanostructural devices. Nanoscaling of the above materials can result in a modification of their functionality. Furthermore, nanoscaling can be used to form high density arrays of nanodomain nanostructures, which is desirable for miniaturization of devices

  3. Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

    DEFF Research Database (Denmark)

    Phatak, C.; Petford-Long, A. K.; Beleggia, Marco

    2014-01-01

    Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We prese...

  4. Two-dimensional ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

    2000-03-31

    The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

  5. Nanoscale ferroelectrics and multiferroics key processes and characterization issues, and nanoscale effects

    CERN Document Server

    Alguero, Miguel

    2016-01-01

    This book reviews the key issues in processing and characterization of nanoscale ferroelectrics and multiferroics, and provides a comprehensive description of their properties, with an emphasis in differentiating size effects of extrinsic ones like boundary or interface effects. Recently described nanoscale novel phenomena are also addressed. Organized into three parts it addresses key issues in processing (nanostructuring), characterization (of the nanostructured materials) and nanoscale effects. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, it covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer heterostructures or epitaxial systems, and to nanoscale free standing objects with specific geometries, such as nanowires and tubes at different levels of development. The book is developed from t...

  6. Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

    Science.gov (United States)

    Phatak, C.; Petford-Long, A. K.; Beleggia, M.; De Graef, M.

    2014-06-01

    Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

  7. Ferroelectric switching of elastin

    Science.gov (United States)

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  8. Ferroelectricity at the nanoscale basics and applications

    CERN Document Server

    Fridkin, Vladimir

    2014-01-01

    This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

  9. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Science.gov (United States)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-03-01

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

  10. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-01-25

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

  11. Resonant tunneling across a ferroelectric domain wall

    Science.gov (United States)

    Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

    2018-04-01

    Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

  12. Losses in Ferroelectric Materials

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  13. Losses in Ferroelectric Materials.

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-03-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  14. Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

    Science.gov (United States)

    Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

    2014-11-17

    Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

  15. Ferroelectrics principles, structure and applications

    CERN Document Server

    Merchant, Serena

    2014-01-01

    Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

  16. Passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains with embedded nano-twin bundles

    International Nuclear Information System (INIS)

    Li, Tianshu; Liu, Li; Zhang, Bin; Li, Ying; Yan, Fengkai; Tao, Nairong; Wang, Fuhui

    2014-01-01

    Highlights: • Nanometer-grains (NG) and bundles of nano-twins (NT) is synthesized in 316L. • (NG + NT) and NT enhance the concentration of active Fe Fe in the passive film. • (NG + NT) and NT enhance the passive ability. • A Cr 0 -enriched layer forms at the passive film/metal interface. - Abstract: The passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains (NG) and nano-twin bundles (NT) are investigated. The electrochemical results indicate that the spontaneous passivation ability and growth rate of passive film are improved. The X-ray photoelectron spectroscopy (XPS) shows that a Cr 0 -enriched layer forms at the passive film/metal interface. More nucleation sites afforded by the nanostructures and the enhanced diffusion rate of charged species across the passive film are believed to be responsible for the improved passive ability. The PDM model is introduced to elaborate the microscopic process of passivation

  17. Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

    Science.gov (United States)

    Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

    2018-01-01

    Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

  18. Impact of nanoconfinement on the diisopropylammonium chloride (C6H16ClN) organic ferroelectric

    Science.gov (United States)

    Baryshnikov, S. V.; Charnaya, E. V.; Milinskiy, A. Yu.; Parfenov, V. A.; Egorova, I. V.

    2018-03-01

    The dielectric studies of diisopropylammonium chloride (DIPAC) nanoparticles embedded into opal and MCM-41 silica matrices are presented. It is shown that the ferroelectric phase transition shifts to low temperatures and broadens for DIPAC within the opal pores compared to bulk. The thermal hysteresis of the transition increases under opal nanoconfinement. No anomalies of the permittivity relevant to the ferroelectric transition are observed for DIPAC within the MCM-41 molecular sieves likely due to formation of the amorphous phase.

  19. Correlation of carrier localization with relaxation time distribution and electrical conductivity relaxation in silver-nanoparticle-embedded moderately doped polypyrrole nanostructures

    Science.gov (United States)

    Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

    2014-02-01

    The electrical conductivity relaxation in moderately doped polypyrrole and its nanocomposites reinforced with different proportion of silver nanoparticles was investigated in both frequency and time domain. An analytical distribution function of relaxation times is constructed from the results obtained in the frequency domain formalism and is used to evaluate the Kohlrausch-Williams-Watts (KWW) type decay function in the time domain. The thermal evolution of different relaxation parameters was analyzed. The temperature-dependent dc electrical conductivity, estimated from the average conductivity relaxation time is observed to depend strongly on the nanoparticle loading and follows Mott three-dimensional variable range hopping (VRH) conduction mechanism. The extent of charge carrier localization calculated from the VRH mechanism is well correlated to the evidences obtained from the structural characterizations of different nanostructured samples.

  20. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  1. Ferroelectric self-assembled PbTiO{sub 3} perovskite nanostructures onto (100)SrTiO{sub 3} substrates from a novel microemulsion aided sol-gel preparation method

    Energy Technology Data Exchange (ETDEWEB)

    Calzada, M L [Institucion Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid (Spain); Torres, M [Institucion Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid (Spain); Fuentes-Cobas, L E [Centro de Investigacion en Materiales Avanzados, Chihuahua (Mexico); Mehta, A [Stanford Synchrotron Radiation Laboratory, Menlo Park, CA (United States); Ricote, J [Institucion Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid (Spain); Pardo, L [Institucion Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid (Spain)

    2007-09-19

    A novel preparation method, which involves the use of microemulsions, sol-gel chemistry and chemical solution deposition, has been developed in this work for the preparation of layers of PbTiO{sub 3} nanostructures supported on SrTiO{sub 3} substrates. A transparent solution was first prepared by mixing a PbTiO{sub 3} precursor sol and a microemulsion formed by water, cyclohexane and the surfactant Brij 30 (polyoxyethylene(4) lauryl ether). The solution was deposited onto the SrTiO{sub 3} substrate by spin-coating and dried under controlled conditions (temperature, time and relative humidity) to favor the rearrangement of the micelles in the deposited coat. After a rapid thermal treatment of crystallization at 650 deg. C, nanostructures with uniform sizes of {approx}40 nm diameter and showing periodicity in some zones of the substrate are obtained. The analysis of these nanostructures by grazing-incidence x-ray synchrotron radiation indicates that they have a perovskite structure with a <100> preferred orientation and that they are under strained conditions. Thermal treatments at higher temperatures produce the collapse of the ordered nanoparticles' network and the formation of larger isolated particles of PbTiO{sub 3} with a truncated-pyramid morphology. Piezoresponse force microscopy studies demonstrate that the spontaneous polarization of these PbTiO{sub 3} nanostructures can be switched and that they have piezoelectric activity. These results support the fabrication strategy here proposed as a promising approach for the preparation of nanoferroelectrics onto substrates of possible interest in future nanoelectronic devices.

  2. Molecular ferroelectrics: where electronics meet biology.

    Science.gov (United States)

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  3. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  4. Ferroelectric materials and their applications

    CERN Document Server

    Xu, Y

    2013-01-01

    This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

  5. Embedded Systems

    Indian Academy of Sciences (India)

    Embedded system, micro-con- troller ... Embedded systems differ from general purpose computers in many ... Low cost: As embedded systems are extensively used in con- .... operating systems for the desktop computers where scheduling.

  6. Ferroelectricity the fundamentals collection

    CERN Document Server

    Jimenez, Basilio

    2008-01-01

    This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

  7. Embedded Leverage

    DEFF Research Database (Denmark)

    Frazzini, Andrea; Heje Pedersen, Lasse

    find that asset classes with embedded leverage offer low risk-adjusted returns and, in the cross-section, higher embedded leverage is associated with lower returns. A portfolio which is long low-embedded-leverage securities and short high-embedded-leverage securities earns large abnormal returns...

  8. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  9. Ultra-fine CuO Nanoparticles Embedded in Three-dimensional Graphene Network Nano-structure for High-performance Flexible Supercapacitors

    International Nuclear Information System (INIS)

    Li, Yanrong; Wang, Xue; Yang, Qi; Javed, Muhammad Sufyan; Liu, Qipeng; Xu, Weina; Hu, Chenguo; Wei, Dapeng

    2017-01-01

    High conductivity, large specific surface area and excellent performance redox materials are urgently desired for improving electrochemical energy storage. However, with single redox material it is hard to achieve these properties. Herein, we develop ultra-fine CuO nanoparticles embedded in three-dimensional graphene network grown on carbon cloth (CuO/3DGN/CC) to construct a novel electrode material with advantages of high conductivity, large specific area and excellent redox activity for supercapacitor application. The CuO/3DGN/CC with different CuO mass ratios are utilized to fabricate supercapacitors and the optimized mass loading achieves the high areal capacitance of 2787 mF cm"−"2 and specific capacitance of 1539.8 F g"−"1 at current density of 6 mA cm"−"2 with good stability. In addition, a high-flexible solid-state symmetric supercapacitor is also fabricated by using this CuO/3DGN/CC composite. The device shows excellent electrochemical performance even at various bending angles indicating a promising application for wearable electronic devices, and two devices with area 2 × 4 cm"2 in series can light nine light emitting diodes for more than 3 minutes.

  10. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  11. Programmable ferroelectric tunnel memristor

    Directory of Open Access Journals (Sweden)

    Andy eQuindeau

    2014-02-01

    Full Text Available We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8]O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

  12. Innovative architectures in ferroelectric multi-materials: Chemistry, interfaces and strain

    Directory of Open Access Journals (Sweden)

    C. Elissalde

    2015-06-01

    Full Text Available Breakthroughs can be expected in multi-component ceramics by adjusting the phase assembly and the micro–nanostructure. Controlling the architecture of multi-materials at different scales is still challenging and provides a great opportunity to broaden the range of functionalities in the field of ferroelectric-based ceramics. We used the potentialities of Spark Plasma Sintering (SPS to control a number of key parameters regarding the properties: anisotropy, interfaces, grain size and strain effects. The flexibility of the wet and supercritical chemistry routes associated with the versatility of SPS allowed designing new ferroelectric composite ceramics at different scales. These approaches are illustrated through various examples based on our work on ferroelectric/dielectric composites.

  13. Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

    Energy Technology Data Exchange (ETDEWEB)

    Herderick, Edward D; Padture, Nitin P [Department of Materials Science and Engineering, Center for Emergent Materials, Ohio State University, Columbus, OH 43210 (United States); Polomoff, Nicholas A; Huey, Bryan D, E-mail: padture.1@osu.edu [Department of Chemical, Materials, and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

    2010-08-20

    A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO{sub 3}-Au and Au-PbTiO{sub 3}-Au. This method entails electrodeposition of segmented nanowires of Au-TiO{sub 2}-Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO{sub 2} segments into BaTiO{sub 3} or PbTiO{sub 3} segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

  14. Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

    International Nuclear Information System (INIS)

    Herderick, Edward D; Padture, Nitin P; Polomoff, Nicholas A; Huey, Bryan D

    2010-01-01

    A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO 3 -Au and Au-PbTiO 3 -Au. This method entails electrodeposition of segmented nanowires of Au-TiO 2 -Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO 2 segments into BaTiO 3 or PbTiO 3 segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

  15. Directly patternable high refractive index ferroelectric sol–gel resist

    Energy Technology Data Exchange (ETDEWEB)

    Garoli, D., E-mail: denis.garoli@iit.it [Istituto Italiano di Tecnologia, Via Morego 16, 16136 Genova (Italy); Della Giustina, G. [Industrial Engineering Department, University of Padova and INSTM, Via Marzolo 9, 35131 Padova (Italy)

    2015-08-15

    The development of a ferroelectric negative tone sol–gel resist for Ultraviolet (UV) and Electron Beam (EB) lithography is presented. A new system based on Lead Zirconate Titanate (PZT, with formula PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}) was synthesized by sol–gel method. The lithographic performances were investigated and several structures spanning from the micron range down to less than 50 nm have been achieved by UV and EB lithography. The system interaction with UV light and Electron beam was thoroughly characterized by FT-IT spectroscopy. The exposed PZT was annealed at high temperatures in order to study the crystalline phase evolution, the optical constants values and stability of patterned structures. After exposure and annealing, the refractive index of the material can vary from 1.68 up to 2.33 (@400 nm), while the ferroelectric behaviour seems to be maintained after high temperature annealing. These results suggest a possible application of PZT resist not only as ferroelectric but also as nanopatternable high refractive index material. Moreover, direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified and the potentiality for the preparation of high aspect ratio hollow nanostructures will be presented. - Highlights: • A new formula directly patternable PZT high refractive index resist is presented. • The gel is sensitive to both UV and electron beam exposure. • The refractive index can vary from 1.68 up to 2.33 (@400 nm). • Direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified. • High aspect ratio hollow nanostructures will be presented.

  16. Ferroelectric negative capacitance domain dynamics

    Science.gov (United States)

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2018-05-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

  17. Manganese Nanostructures and Magnetism

    Science.gov (United States)

    Simov, Kirie Rangelov

    The primary goal of this study is to incorporate adatoms with large magnetic moment, such as Mn, into two technologically significant group IV semiconductor (SC) matrices, e.g. Si and Ge. For the first time in the world, we experimentally demonstrate Mn doping by embedding nanostructured thin layers, i.e. delta-doping. The growth is observed by in-situ scanning tunneling microscopy (STM), which combines topographic and electronic information in a single image. We investigate the initial stages of Mn monolayer growth on a Si(100)(2x1) surface reconstruction, develop methods for classification of nanostructure types for a range of surface defect concentrations (1.0 to 18.2%), and subsequently encapsulate the thin Mn layer in a SC matrix. These experiments are instrumental in generating a surface processing diagram for self-assembly of monoatomic Mn-wires. The role of surface vacancies has also been studied by kinetic Monte Carlo modeling and the experimental observations are compared with the simulation results, leading to the conclusion that Si(100)(2x1) vacancies serve as nucleation centers in the Mn-Si system. Oxide formation, which happens readily in air, is detrimental to ferromagnetism and lessens the magnetic properties of the nanostructures. Therefore, the protective SC cap, composed of either Si or Ge, serves a dual purpose: it is both the embedding matrix for the Mn nanostructured thin film and a protective agent for oxidation. STM observations of partially deposited caps ensure that the nanostructures remain intact during growth. Lastly, the relationship between magnetism and nanostructure types is established by an in-depth study using x-ray magnetic circular dichroism (XMCD). This sensitive method detects signals even at coverages less than one atomic layer of Mn. XMCD is capable of discerning which chemical compounds contribute to the magnetic moment of the system, and provides a ratio between the orbital and spin contributions. Depending on the amount

  18. Graded ferroelectrics, transpacitors and transponents

    CERN Document Server

    Mantese, Joseph V

    2005-01-01

    The text details the experimental and theoretical aspects of newly emerging ferroelectric devices, and their extensions to other ferroic systems such as: ferromagnetics, ferroelastics, piezoelectrics, etc. The theory and experimental results pertaining to non-homogeneous active ferroic devices and structures are presented.

  19. Surface Acoustic Waves in ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

    2004-01-01

    Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

  20. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

  1. Nanostructured transparent conducting oxide electrochromic device

    Science.gov (United States)

    Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

    2016-05-17

    The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

  2. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

    International Nuclear Information System (INIS)

    Kurchak, Anatolii I.; Eliseev, Eugene A.; Kalinin, Sergei V.; Strikha, Maksym V.; Morozovska, Anna N.

    2017-01-01

    The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

  3. Embedded defects

    International Nuclear Information System (INIS)

    Barriola, M.; Vachaspati, T.; Bucher, M.

    1994-01-01

    We give a prescription for embedding classical solutions and, in particular, topological defects in field theories which are invariant under symmetry groups that are not necessarily simple. After providing examples of embedded defects in field theories based on simple groups, we consider the electroweak model and show that it contains the Z string and a one-parameter family of strings called the W(α) string. It is argued that although the members of this family are gauge equivalent when considered in isolation, each member becomes physically distinct when multistring configurations are considered. We then turn to the issue of stability of embedded defects and demonstrate the instability of a large class of such solutions in the absence of bound states or condensates. The Z string is shown to be unstable for all values of the Higgs boson mass when θ W =π/4. W strings are also shown to be unstable for a large range of parameters. Embedded monopoles suffer from the Brandt-Neri-Coleman instability. Finally, we connect the electroweak string solutions to the sphaleron

  4. Encoding, training and retrieval in ferroelectric tunnel junctions

    Science.gov (United States)

    Xu, Hanni; Xia, Yidong; Xu, Bo; Yin, Jiang; Yuan, Guoliang; Liu, Zhiguo

    2016-05-01

    Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirmed. The poor retention or short-term store of tunneling electroresistance, in particular the intermediate states, is still a key challenge in FTJs. Here we report the encoding, training and retrieval in BaTiO3 FTJs, emulating the key features of information processing in terms of cognitive neuroscience. This is implemented and exemplified through processing characters. Using training inputs that are validated by the evolution of both barrier profile and domain configuration, accurate recalling of encoded characters in the retrieval stage is demonstrated.

  5. Percolation Magnetism in Ferroelectric Nanoparticles

    Science.gov (United States)

    Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

    2017-06-01

    Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  6. Quantum fluctuations in insulating ferroelectrics

    International Nuclear Information System (INIS)

    Riseborough, Peter S.

    2010-01-01

    Graphical abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility. - Abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero-point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility.

  7. Percolation Magnetism in Ferroelectric Nanoparticles.

    Science.gov (United States)

    Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

    2017-12-01

    Nanoparticles of potassium tantalate (KTaO 3 ) and potassium niobate (KNbO 3 ) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe 3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  8. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  9. Guest Editoria, Ferroelectrics, 323, 1

    OpenAIRE

    Krupanidhi, SB

    2005-01-01

    The Fourth Asian Meeting on Ferroelectricity (AMF-4)was organized at the Indian Institute of Science, Bangalore, INDIA during December 12–15, 2003. The organization of the conferencewas cosponsored by various agencies which included the Department of Science & Technology (DST), Defense R&D Organization (DRDO), Council of Scientific and Industrial Research (CSIR), Materials Research Society of India (MRSI), Indian Institute of Science (IISC), IEEE UFFC (USA), Taylor and Francis Scientific P...

  10. Polymer Ferroelectric Memory for Flexible Electronics

    KAUST Repository

    Khan, Mohd Adnan

    2013-11-01

    With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

  11. Polymer Ferroelectric Memory for Flexible Electronics

    KAUST Repository

    Khan, Mohd Adnan

    2013-01-01

    With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

  12. Analytic device including nanostructures

    KAUST Repository

    Di Fabrizio, Enzo M.; Fratalocchi, Andrea; Totero Gongora, Juan Sebastian; Coluccio, Maria Laura; Candeloro, Patrizio; Cuda, Gianni

    2015-01-01

    A device for detecting an analyte in a sample comprising: an array including a plurality of pixels, each pixel including a nanochain comprising: a first nanostructure, a second nanostructure, and a third nanostructure, wherein size of the first nanostructure is larger than that of the second nanostructure, and size of the second nanostructure is larger than that of the third nanostructure, and wherein the first nanostructure, the second nanostructure, and the third nanostructure are positioned on a substrate such that when the nanochain is excited by an energy, an optical field between the second nanostructure and the third nanostructure is stronger than an optical field between the first nanostructure and the second nanostructure, wherein the array is configured to receive a sample; and a detector arranged to collect spectral data from a plurality of pixels of the array.

  13. A concept of ferroelectric microparticle propulsion thruster

    International Nuclear Information System (INIS)

    Yarmolich, D.; Vekselman, V.; Krasik, Ya. E.

    2008-01-01

    A space propulsion concept using charged ferroelectric microparticles as a propellant is suggested. The measured ferroelectric plasma source thrust, produced mainly by microparticles emission, reaches ∼9x10 -4 N. The obtained trajectories of microparticles demonstrate that the majority of the microparticles are positively charged, which permits further improvement of the thruster

  14. Manipulation of charge transfer and transport in plasmonic-ferroelectric hybrids for photoelectrochemical applications

    Science.gov (United States)

    Wang, Zhijie; Cao, Dawei; Wen, Liaoyong; Xu, Rui; Obergfell, Manuel; Mi, Yan; Zhan, Zhibing; Nasori, Nasori; Demsar, Jure; Lei, Yong

    2016-01-01

    Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O3 (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond transient absorbance in different configurations, we demonstrate an effective charge transfer between the nanoparticle array and PZT. Most importantly, we show that the photocurrent can be tuned by nearly an order of magnitude when changing the ferroelectric polarization in PZT, demonstrating a versatile and tunable system for energy harvesting. PMID:26753764

  15. Structure-Function Relationships of Ferroelectric Polymers.

    Science.gov (United States)

    Pavlopoulou, Eleni; Maiz, Jon; Spampinato, Nicoletta; Maglione, Mario; Hadziioannou, Georges

    Poly(vinylidene fluoride), PVDF, and its copolymers with trifluoroethylene, P(VDF-co-TrFE) have been long appreciated for their excellent ferroelectric properties. Although they have been mainly studied in the 80s and 90s, understanding their performance is still lacking. Yet the increasing use of P(VDF-co-TrFE) thin films in organic electronic devices during the last ten years revives the need for apprehending the function of these materials. In this work we investigate the structure of P(VDF-co-TrFE) films and correlate it to their ferroelectric properties. Our results show that ferroelectric performance is solely driven by the fraction of polymer that has been crystallized in the ferroelectric phases of PVDF. The relations between remnant polarization, coercive field and dipole switching rate of P(VDF-co-TrFE) with the ferroelectric crystallinity are demonstrated. The French Research Agency (ANR), the Aquitaine Region, Arkema and STMicroelectronics are kindly acknowledged for financial support.

  16. Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

    Science.gov (United States)

    Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

    2017-12-01

    This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

  17. Ferroelectric Electron Emission Principles and Technology

    CERN Document Server

    Riege, H

    1997-01-01

    The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

  18. Embedded Hardware

    CERN Document Server

    Ganssle, Jack G; Eady, Fred; Edwards, Lewin; Katz, David J; Gentile, Rick

    2007-01-01

    The Newnes Know It All Series takes the best of what our authors have written to create hard-working desk references that will be an engineer's first port of call for key information, design techniques and rules of thumb. Guaranteed not to gather dust on a shelf!. Circuit design using microcontrollers is both a science and an art. This book covers it all. It details all of the essential theory and facts to help an engineer design a robust embedded system. Processors, memory, and the hot topic of interconnects (I/O) are completely covered. Our authors bring a wealth of experience and ideas; thi

  19. Matrix-assisted energy conversion in nanostructured piezoelectric arrays

    Science.gov (United States)

    Sirbuly, Donald J.; Wang, Xianying; Wang, Yinmin

    2013-01-01

    A nanoconverter is capable of directly generating electricity through a nanostructure embedded in a polymer layer experiencing differential thermal expansion in a stress transfer zone. High surface-to-volume ratio semiconductor nanowires or nanotubes (such as ZnO, silicon, carbon, etc.) are grown either aligned or substantially vertically aligned on a substrate. The resulting nanoforest is then embedded with the polymer layer, which transfers stress to the nanostructures in the stress transfer zone, thereby creating a nanostructure voltage output due to the piezoelectric effect acting on the nanostructure. Electrodes attached at both ends of the nanostructures generate output power at densities of .about.20 nW/cm.sup.2 with heating temperatures of .about.65.degree. C. Nanoconverters arrayed in a series parallel arrangement may be constructed in planar, stacked, or rolled arrays to supply power to nano- and micro-devices without use of external batteries.

  20. Structural Consequences of Ferroelectric Nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  1. Chemical segregation and self polarisation in ferroelectrics

    Directory of Open Access Journals (Sweden)

    Bernard E. Watts

    2009-06-01

    Full Text Available Chemical partitioning or segregation is commonly encountered in solid-state syntheses. It is driven by compositional, thermal and electric field gradients. These phenomena can be quite extreme in thin films and lead to notable effects on the electrical properties of ferroelectrics. The segregation in ferroelectric thin films will be illustrated and the mechanisms explained in terms of diffusion processes driven by a potential gradient of the oxygen. The hypothesis can also explain self polarisation and imprint in ferroelectric hysteresis.

  2. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

    Science.gov (United States)

    Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

    2006-09-15

    We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

  3. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  4. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  5. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    International Nuclear Information System (INIS)

    Daranciang, Dan

    2012-01-01

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  6. Modeling of Toroidal Ordering in Ferroelectric Nanodots

    National Research Council Canada - National Science Library

    Crone, Joshua C; Chung, Peter W

    2007-01-01

    .... Beginning with an introduction of basic concepts, the report reviews the current state-of-the-art of ferroelectric nanodot technology through a literature review and identifies areas of need for continued study...

  7. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  8. Four-state ferroelectric spin-valve

    Czech Academy of Sciences Publication Activity Database

    Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

    2015-01-01

    Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

  9. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    Science.gov (United States)

    2016-04-19

    the free energy of the system [3,4,8]. Intensive research has been aimed at bypassing the intrinsic size limits imposed by the depolarization field...Page 1 of 21   Ultrafast photovoltaic response in ferroelectric nanolayers Dan Daranciang1,2, Matthew J. Highland3, Haidan Wen4, Steve M. Young5...ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on

  10. Ferroelectric Phase Diagram of PVDF:PMMA

    OpenAIRE

    Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

  11. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser

    2013-10-29

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Computational study of textured ferroelectric polycrystals: Dielectric and piezoelectric properties of template-matrix composites

    Science.gov (United States)

    Zhou, Jie E.; Yan, Yongke; Priya, Shashank; Wang, Yu U.

    2017-01-01

    Quantitative relationships between processing, microstructure, and properties in textured ferroelectric polycrystals and the underlying responsible mechanisms are investigated by phase field modeling and computer simulation. This study focuses on three important aspects of textured ferroelectric ceramics: (i) grain microstructure evolution during templated grain growth processing, (ii) crystallographic texture development as a function of volume fraction and seed size of the templates, and (iii) dielectric and piezoelectric properties of the obtained template-matrix composites of textured polycrystals. Findings on the third aspect are presented here, while an accompanying paper of this work reports findings on the first two aspects. In this paper, the competing effects of crystallographic texture and template seed volume fraction on the dielectric and piezoelectric properties of ferroelectric polycrystals are investigated. The phase field model of ferroelectric composites consisting of template seeds embedded in matrix grains is developed to simulate domain evolution, polarization-electric field (P-E), and strain-electric field (ɛ-E) hysteresis loops. The coercive field, remnant polarization, dielectric permittivity, piezoelectric coefficient, and dissipation factor are studied as a function of grain texture and template seed volume fraction. It is found that, while crystallographic texture significantly improves the polycrystal properties towards those of single crystals, a higher volume fraction of template seeds tends to decrease the electromechanical properties, thus canceling the advantage of ferroelectric polycrystals textured by templated grain growth processing. This competing detrimental effect is shown to arise from the composite effect, where the template phase possesses material properties inferior to the matrix phase, causing mechanical clamping and charge accumulation at inter-phase interfaces between matrix and template inclusions. The computational

  14. Unveiling the Role of CNTs on the Phase Formation of 1D Ferroelectrics

    KAUST Repository

    Mahajan, Amit

    2015-05-21

    Carbon nanotubes (CNTs) have the potential to act as templates or bottom electrodes for three dimension (3D) capacitor arrays, which utilise one dimension (1D) ferroelectric nanostructures to increase memory size and density. However, growing a ferroelectric on the surface of CNTs is non-trivial. Here, we demonstrate that multi-walled (MW) CNTs decrease the time and temperature for formation of lead zirconium titanate Pb(Zr1-xTix)O3 (PZT) by ~100 ºC commensurate with a decrease in activation energy from 68±15 kJ/mol to 27±2 kJ/mol. As a consequence, monophasic PZT was obtained at 575 ºC for MWCNTs/PZT whereas for pure PZT traces of pyrochlore were still present at 650 ºC, where PZT phase formed due to homogeneous nucleation. The piezoelectric nature of MWCNT/PZT synthesised at 500 ºC for 1 h was proved. Although further work is required to prove the concept of 3D capacitor arrays, our result suggests that it is feasible to utilise MWCNTs as templates/electrodes for the formation of 1D PZT nano ferroelectrics.

  15. Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer

    Science.gov (United States)

    Huang, Chengxi; Du, Yongping; Wu, Haiping; Xiang, Hongjun; Deng, Kaiming; Kan, Erjun

    2018-04-01

    The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multistate data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition-metal halide systems. On the basis of first-principles calculations, we reveal that a charged CrBr3 monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr - Br6 units. As an example, we further show that (CrBr3)2Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system not only are useful for fundamental research in multiferroics but also enable a wide range of applications in nanodevices.

  16. Fabricating ordered functional nanostructures onto polycrystalline substrates from the bottom-up

    International Nuclear Information System (INIS)

    Torres, María; Pardo, Lorena; Ricote, Jesús; Fuentes-Cobas, Luís E.; Rodriguez, Brian J.; Calzada, M. Lourdes

    2012-01-01

    Microemulsion-mediated synthesis has emerged as a powerful bottom-up procedure for the preparation of ferroelectric nanostructures onto substrates. However, periodical order has yet to be achieved onto polycrystalline Pt-coated Si substrates. Here, we report a new methodology that involves microemulsion-mediated synthesis and the controlled modification of the surface of the substrate by coating it with a template-layer of water-micelles. This layer modifies the surface tension of the substrate and yields a periodic arrangement of ferroelectric crystalline nanostructures. The size of the nanostructures is decreased to the sub-50 nm range and they show a hexagonal order up to the third neighbors, which corresponds to a density of 275 Gb in −2 . The structural analysis of the nanostructures by synchrotron X-ray diffraction confirms that the nanostructures have a PbTiO 3 perovskite structure, with lattice parameters of a = b = 3.890(0) Å and c = 4.056(7) Å. Piezoresponse force microscopy confirmed the ferro-piezoelectric character of the nanostructures. This simple methodology is valid for the self-assembly of other functional oxides onto polycrystalline substrates, enabling their reliable integration into micro/nano devices.

  17. Embedded Processor Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Embedded Processor Laboratory provides the means to design, develop, fabricate, and test embedded computers for missile guidance electronics systems in support...

  18. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

    Science.gov (United States)

    Ali, Faizan; Liu, Xiaohua; Zhou, Dayu; Yang, Xirui; Xu, Jin; Schenk, Tony; Müller, Johannes; Schroeder, Uwe; Cao, Fei; Dong, Xianlin

    2017-10-01

    Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3 is achieved at 4.5 MV/cm with a high efficiency of ˜65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors.

  19. Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate

    Science.gov (United States)

    Burnett, T. L.; Weaver, P. M.; Blackburn, J. F.; Stewart, M.; Cain, M. G.

    2010-08-01

    The functional properties of ferroelectric ceramic bulk or thin film materials are strongly influenced by their nanostructure, crystallographic orientation, and structural geometry. In this paper, we show how, by combining textural analysis, through electron backscattered diffraction, with piezoresponse force microscopy, quantitative measurements of the piezoelectric properties can be made at a scale of 25 nm, smaller than the domain size. The combined technique is used to obtain data on the domain-resolved effective single crystal piezoelectric response of individual crystallites in Pb(Zr0.4Ti0.6)O3 ceramics. The results offer insight into the science of domain engineering and provide a tool for the future development of new nanostructured ferroelectric materials for memory, nanoactuators, and sensors based on magnetoelectric multiferroics.

  20. Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

    2016-01-18

    Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

  1. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NARCIS (Netherlands)

    Cai, R.; Kassa, H.G.; Haouari, R.; Marrani, A.; Geerts, Y.H.; Ruzié, C.; Breemen, A.J.J.M. van; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

    2016-01-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and

  2. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  3. Impact induced depolarization of ferroelectric materials

    Science.gov (United States)

    Agrawal, Vinamra; Bhattacharya, Kaushik

    2018-06-01

    We study the large deformation dynamic behavior and the associated nonlinear electro-thermo-mechanical coupling exhibited by ferroelectric materials in adiabatic environments. This is motivated by a ferroelectric generator which involves pulsed power generation by loading the ferroelectric material with a shock, either by impact or a blast. Upon impact, a shock wave travels through the material inducing a ferroelectric to nonpolar phase transition giving rise to a large voltage difference in an open circuit situation or a large current in a closed circuit situation. In the first part of this paper, we provide a general continuum mechanical treatment of the situation assuming a sharp phase boundary that is possibly charged. We derive the governing laws, as well as the driving force acting on the phase boundary. In the second part, we use the derived equations and a particular constitutive relation that describes the ferroelectric to nonpolar phase transition to study a uniaxial plate impact problem. We develop a numerical method where the phase boundary is tracked but other discontinuities are captured using a finite volume method. We compare our results with experimental observations to find good agreement. Specifically, our model reproduces the observed exponential rise of charge as well as the resistance dependent Hugoniot. We conclude with a parameter study that provides detailed insight into various aspects of the problem.

  4. Flexible graphene-PZT ferroelectric nonvolatile memory.

    Science.gov (United States)

    Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-29

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  5. Engineering Nano-Structured Multiferroic Thin Films

    Science.gov (United States)

    Cheung, Pui Lam

    Multiferroics exhibit remarkable tunabilities in their ferromagnetic, ferroelectric and magnetoelectric properties that provide the potential in enabling the control of magnetizations by electric field for the next generation non-volatile memories, antennas and motors. In recent research and developments in integrating single-phase ferroelectric and ferromagnetic materials, multiferroic composite demonstrated a promising magnetoelectric (ME) coupling for future applications. Atomic layer deposition (ALD) technique, on the other hand, allows fabrications of complex multiferroic nanostructures to investigate interfacial coupling between the two materials. In this work, radical-enhanced ALD of cobalt ferrite (CFO) and thermal ALD of lead zirconate titanate (PZT) were combined in fabricating complex multiferroic architectures in investigating the effect of nanostructuring and magnetic shape anisotropy on improving ME coupling. In particular, 1D CFO nanotubes and nanowires; 0D-3D CFO/PZT mesoporous composite; and 1D-1D CFO/PZT core-shell nanowire composite were studied. The potential implementation of nanostructured multiferroic composites into functioning devices was assessed by quantifying the converse ME coupling coefficient. The synthesis of 1D CFO nanostructures was realized by ALD of CFO in anodic aluminum oxide (AAO) membranes. This work provided a simple and inexpensive route to create parallel and high aspect ratio ( 55) magnetic nanostructures. The change in magnetic easy axis of (partially filled) CFO nanotubes from perpendicular to parallel in (fully-filled) nanowires indicated the significance of the geometric factor in controlling magnetizations and ME coupling. The 0D-3D CFO/PZT mesoporous composite demonstrated the optimizations of the strain transfer could be achieved by precise thickness control. 100 nm of mesoporous PZT was synthesized on Pt/TiOx/SiO2/Si using amphiphilic diblock copolymers as a porous ferroelectric template (10 nm pore diameter) for

  6. Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

    Science.gov (United States)

    Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

    2018-02-01

    Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

  7. Conceptualizing Embedded Configuration

    DEFF Research Database (Denmark)

    Oddsson, Gudmundur Valur; Hvam, Lars; Lysgaard, Ole

    2006-01-01

    and services. The general idea can be named embedded configuration. In this article we intend to conceptualize embedded configuration, what it is and is not. The difference between embedded configuration, sales configuration and embedded software is explained. We will look at what is needed to make embedded...... configuration systems. That will include requirements to product modelling techniques. An example with consumer electronics will illuminate the elements of embedded configuration in settings that most can relate to. The question of where embedded configuration would be relevant is discussed, and the current...

  8. Uncooled monolithic ferroelectric IRFPA technology

    Science.gov (United States)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  9. Quantum switching of polarization in mesoscopic ferroelectrics

    International Nuclear Information System (INIS)

    Sa de Melo, C.A.

    1996-01-01

    A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

  10. Electrostatic micromotor based on ferroelectric ceramics

    Science.gov (United States)

    Baginsky, I. L.; Kostsov, E. G.

    2004-11-01

    A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

  11. Flexoelectricity: strain gradient effects in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

    2007-12-15

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

  12. Ferroelectric domain continuity over grain boundaries

    DEFF Research Database (Denmark)

    Mantri, Sukriti; Oddershede, Jette; Damjanovic, Dragan

    2017-01-01

    Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain boundary-domain interactions, thereby...... impacting macroscopic ferroelectric properties in polycrystalline systems. However detailed studies of such correlated domain structures across grain boundaries are limited. In this work, we have developed the mathematical requirements for domain wall plane matching at grain boundaries of any given...... orientation. We have also incorporated the effect of grain boundary ferroelectric polarization charge created when any two domains meet at the grain boundary plane. The probability of domain wall continuity for three specific grain misorientations is studied. Use of this knowledge to optimize processing...

  13. Ferroelectric Cathodes in Transverse Magnetic Fields

    International Nuclear Information System (INIS)

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-01-01

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode

  14. Quantum mechanical studies of complex ferroelectric perovskites

    Science.gov (United States)

    Ramer, Nicholas John

    In many electronic device applications, there is a need to interconvert electrical energy and other types of energy. Ferroelectric materials, which possess a voltage-dependent polarization, can enable this energy conversion process. Because of the broad interest in ferroelectric materials for these devices, there is a critical research effort, both experimental and theoretical, to understand these materials and aid in the development of materials with improved properties. This thesis presents detailed quantum mechanical investigations of the behavior of a complex ferroelectric perovskite under applied stress. In particular, we have chosen to study the solid solution PbZr1-xTix O3 (PZT). Since the study of ferroelectricity involves understanding both its structural and electronic signatures in materials, it has necessitated the development of a novel theoretical technique which improves the accuracy of the pseudopotentials used in our density functional theory calculations as well as a new method for constructing three-dimensional atomistic responses to small amounts of external stress. To examine the material's behavior under larger amounts of stress, we have studied the behavior of a composition of PZT lying near a structural phase boundary. On either side of the phase boundary, the material is characterized by a different polarization direction and may easily be switched between phases by applying external stress. In addition to stress-induced phase transitions, most ferroelectric materials also have composition dependent phase boundaries. Since different compositions of PZT would require increased computational effort, we have formulated an improved virtual crystal approach that makes tractable the study of the entire composition range. Using this method, we have been able to show for the first time via first-principles calculations, a composition dependent phase transition in a ferroelectric material. This thesis has accomplished three important goals: new

  15. Composition driven structural instability in perovskite ferroelectrics

    Directory of Open Access Journals (Sweden)

    Chao Xu

    2017-04-01

    Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

  16. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  17. Study of glass-nanocomposite and glass-ceramic containing ferroelectric phase

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Khalek, E.K., E-mail: Eid_khalaf0@yahoo.com [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt); Mohamed, E.A. [Department of Physics, Faculty of Science (Girl' s Branch), Al Azhar University, Nasr City, Cairo (Egypt); Salem, Shaaban M.; Ebrahim, F.M.; Kashif, I. [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Glass nanocomposites was synthesized. Black-Right-Pointing-Pointer Glass nanocomposites exhibit both optical transmission bands at 598 and 660 nm and broad dielectric anomalies. Black-Right-Pointing-Pointer The ferroelectricity in pure single-phase oxide glass has not yet been discovered. - Abstract: Transparent glass nanocomposite in the pseudo binary system (100 - x) Li{sub 2}B{sub 4}O{sub 7}-xBaTiO{sub 3} with x = 0 and 60 (in mol%) were prepared. Amorphous and glassy characteristics of the as-prepared samples were established via X-ray powder diffraction (XRD) and differential scanning calorimetry (DSC) respectively. The precipitated BaTiO{sub 3} nanocrystal phase embedded in the glass sample at x = 60 mol% was identified by transmission electron microscopic (TEM). The optical transmission bands at 598 and 660 nm were assigned to Ti{sup 3+} ions in tetragonal distorted octahedral sites. The precipitated Li{sub 2}B{sub 4}O{sub 7}, BaTi(BO{sub 3}){sub 2} and BaTiO{sub 3} nanocrystallites phases with heat-treatment at 923 K for 6 h (HT923) in glass-ceramic were identified by XRD, TEM and infrared absorption spectroscopy. The as-prepared at x = 60 mol% and the HT923 samples exhibit broad dielectric anomalies in the vicinity of the ferroelectric-to-paraelectric transition temperature. The results demonstrate that the method presented may be an effective way to fabricate ferroelectric host and development of multifunctional ferroelectrics.

  18. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  19. Ferroelectrics under the Synchrotron Light: A Review

    Science.gov (United States)

    Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

    2015-01-01

    Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

  20. Ferroelectrics under the Synchrotron Light: A Review

    Directory of Open Access Journals (Sweden)

    Luis E. Fuentes-Cobas

    2015-12-01

    Full Text Available Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS and X-ray absorption fine structure (XAFS experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

  1. Distribution of correlation radii in disordered ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Stepanovich, V. A.; Jastrabík, Lubomír

    2002-01-01

    Roč. 81, č. 25 (2002), s. 4808-4810 ISSN 0003-6951 R&D Projects: GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : disordered ferroelectrics * distribution of correlation radii * polar nanoregions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

  2. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  3. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  4. Giant electrocaloric effect in a cracked ferroelectrics

    Science.gov (United States)

    Huang, Cheng; Yang, Hai-Bing; Gao, Cun-Fa

    2018-04-01

    The electrocaloric effect (ECE) is the temperature change in a material induced by electrical field variation under adiabatic condition. Considering an external electric load applied on a cracked ferroelectric solid, a non-uniform electric field would be induced at the crack tip, and thus, incompatible strain field and local stress concentration would be generated around it. Furthermore, the enormous strain energy and the electrostatic energy would affect the polarization switching of the ferroelectric solid, important for the electrocaloric response. In this paper, the large negative and positive ECEs in a ferroelectric sheet with a conducting crack are investigated by the phase field method with the consideration of time-dependent Ginzburg-Landau equation. The numerical calculations indicated that the polarization field generates a sharp rise during the domain transition from polydomain to monodomain under a certain electric load. Large negative ECEs, about -10.21 K and -7.55 K, are obtained at 135 °C and 85 °C, respectively. The domain transition temperature is much lower than the Curie temperature, which enlarges the existence scope of the large ECE in ferroelectrics. The results also imply that the domain transition from a multi-domain state to a single domain takes place with the minimization of total free energy, which involves the courses of the electric field, stress field, temperature, and polarization interaction. Therefore, the non-uniform distributions of the stress-electric fields induced by the crack play an important role in ECE.

  5. From antiferroelectricity to ferroelectricity in smectic mesophases ...

    Indian Academy of Sciences (India)

    are not ferroelectric in the ground state, but upon alignment within an electric field .... Figure 3. Molecular organisation within polar smectic phases and possible ways to escape from a macroscopic polarisation in mesophases built up by polar layers. .... in which the molecules adapt a twisted orientation from the top to bottom.

  6. A hybrid ferroelectric-flash memory cells

    Science.gov (United States)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  7. Data retention in organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Breemen, A.J.J.M. van; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

    2016-01-01

    Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can

  8. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  9. The Use of Ferroelectrics and Dipeptides as Insulators in Organic Field-Effect Transistor Devices

    Science.gov (United States)

    Knotts, Grant

    While the electrical transport characteristics of organic electronic devices are generally inferior to their inorganic counterparts, organic materials offer many advantages over inorganics. The materials used in organic devices can often be deposited using cheap and simple processing techniques such as spincoating, inkjet printing, or roll-to-roll processing; allow for large-scale, flexible devices; and can have the added benefits of being transparent or biodegradable. In this manuscript, we examine the role of solvents in the performance of pentacene-based devices using the ferroelectric copolymer polyvinylidene fluoride-trifluoroethylene (PVDF-TrFe) as a gate insulating layer. High dipole moment solvents, such as dimethyl sulfoxide, used to dissolve the copolymer for spincoating increase the charge carrier mobility in field-effect transistors (FETs) by nearly an order of magnitude as compared to lower dipole moment solvents. The polarization in Al/PVDF-TrFe/Au metal-ferroelectric-metal devices also shows an increase in remnant polarization of 20% in the sample using dimethyl sulfoxide as the solvent for the ferroelectric. Interestingly, at low applied electric fields of 100 MV/m a remnant polarization is seen in the high dipole moment device that is nearly 3.5 times larger than the value observed in the lower dipole moment samples, suggesting that the degree of dipolar order is higher at low operating voltages for the high dipole moment device. We will also discuss the use of peptide-based nanostructures derived from natural amino acids as building blocks for biocompatible devices. These peptides can be used in a bottom-up process without the need for expensive lithography. Thin films of L,L-diphenylalanine micro/nanostructures (FF-MNSs) were used as the dielectric layer in pentacene-based FETs and metal-insulator-semiconductor diodes both in bottom-gate and top-gate structures. It is demonstrated that the FFMNSs can be functionalized for detection of enzyme

  10. Polymorphic Embedding of DSLs

    DEFF Research Database (Denmark)

    Hofer, Christian; Ostermann, Klaus; Rendel, Tillmann

    2008-01-01

    propose polymorphic embedding of DSLs, where many different interpretations of a DSL can be provided as reusable components, and show how polymorphic embedding can be realized in the programming language Scala. With polymorphic embedding, the static type-safety, modularity, composability and rapid...

  11. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  12. Ferroelectric domain engineering by focused infrared femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan, E-mail: yan.sheng@anu.edu.au [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Karpinski, Pawel [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Wroclaw University of Technology, Wybrzeze Wyspianskiego, Wroclaw (Poland); Koynov, Kaloian [Max-Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany); Wang, Bingxia; Trull, Jose; Cojocaru, Crina [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Rambla Sant Nebridi, 08222 Terrassa, Barcelona (Spain); Krolikowski, Wieslaw [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Texas A& M University at Qatar, Doha (Qatar)

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  13. Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

    Science.gov (United States)

    Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

    2016-02-19

    We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

  14. Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

    International Nuclear Information System (INIS)

    Qiu, Xunlin

    2010-01-01

    Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called “ferroelectrets”), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

  15. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  16. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kurchak, Anatolii I. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Eliseev, Eugene A. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Strikha, Maksym V. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Taras Shevchenko Kyiv National Univ., Kyiv (Ukraine); Morozovska, Anna N. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)

    2017-08-30

    The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

  17. Ferroelectric devices, interconnects, and methods of manufacture thereof

    KAUST Repository

    Alshareef, Husam N.

    2013-12-12

    A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

  18. A Temperature-Dependent Hysteresis Model for Relaxor Ferroelectric Compounds

    National Research Council Canada - National Science Library

    Raye, Julie K; Smith, Ralph C

    2004-01-01

    This paper summarizes the development of a homogenized free energy model which characterizes the temperature-dependent hysteresis and constitutive nonlinearities inherent to relaxor ferroelectric materials...

  19. Ferroelectric devices, interconnects, and methods of manufacture thereof

    KAUST Repository

    Alshareef, Husam N.; Unnat, Bhansali; Khan, Mohd Adnan; Saleh, Moussa M.; Odeh, Ihab N.

    2013-01-01

    A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

  20. Advanced Magnetic Nanostructures

    CERN Document Server

    Sellmyer, David

    2006-01-01

    Advanced Magnetic Nanostructures is devoted to the fabrication, characterization, experimental investigation, theoretical understanding, and utilization of advanced magnetic nanostructures. Focus is on various types of 'bottom-up' and 'top-down' artificial nanostructures, as contrasted to naturally occurring magnetic nanostructures, such as iron-oxide inclusions in magnetic rocks, and to structures such as perfect thin films. Chapter 1 is an introduction into some basic concepts, such as the definitions of basic magnetic quantities. Chapters 2-4 are devoted to the theory of magnetic nanostructures, Chapter 5 deals with the characterization of the structures, and Chapters 6-10 are devoted to specific systems. Applications of advanced magnetic nanostructures are discussed in Chapters11-15 and, finally, the appendix lists and briefly discusses magnetic properties of typical starting materials. Industrial and academic researchers in magnetism and related areas such as nanotechnology, materials science, and theore...

  1. Nanostructured composite reinforced material

    Science.gov (United States)

    Seals, Roland D [Oak Ridge, TN; Ripley, Edward B [Knoxville, TN; Ludtka, Gerard M [Oak Ridge, TN

    2012-07-31

    A family of materials wherein nanostructures and/or nanotubes are incorporated into a multi-component material arrangement, such as a metallic or ceramic alloy or composite/aggregate, producing a new material or metallic/ceramic alloy. The new material has significantly increased strength, up to several thousands of times normal and perhaps substantially more, as well as significantly decreased weight. The new materials may be manufactured into a component where the nanostructure or nanostructure reinforcement is incorporated into the bulk and/or matrix material, or as a coating where the nanostructure or nanostructure reinforcement is incorporated into the coating or surface of a "normal" substrate material. The nanostructures are incorporated into the material structure either randomly or aligned, within grains, or along or across grain boundaries.

  2. Improving information density in ferroelectric polymer films by using nanoimprinted gratings

    Science.gov (United States)

    Martínez-Tong, Daniel E.; Soccio, Michela; Rueda, Daniel R.; Nogales, Aurora; García-Gutiérrez, Mari Cruz; Ezquerra, Tiberio A.

    2015-03-01

    The development of polymer non-volatile memories depends on the effective fabrication of devices with high density of information. Well-defined low aspect ratio nanogratings on thin films of poly(vinylidene fluoride-trifluoroethylene) copolymers can be fabricated by using Nanoimprint Lithography (NIL). By using these nanogratings, an improved management of writing and reading information can be reached as revealed by Piezoresponse Force Microscopy (PFM). Structural investigation by means of Grazing Incidence X-ray (GIX) scattering techniques indicates that the physical confinement generated by nanoimprint promotes the development of smaller and edge-on oriented crystals. Our results evidence that one-dimensional nanostructuring can be a straightforward approach to improve the control of the polarization in ferroelectric polymer thin films.

  3. R-curve behaviour of ferroelectric ceramics

    International Nuclear Information System (INIS)

    Egorov, N.Ya.; Kramarov, S.O.

    2004-01-01

    The attempt's made to identify and evaluate the regularities of developing the fractures in the ferroelectric ceramics and also-study the effect of the polishing operation on the strength characteristics of the piezoceramics. The R-curve behaviour in the ferroelectric ceramics is studied on the samples of the barium titanate and lead zirconate-titanate by the four-point bending with controlled surface fractures. It is established that increasing curve of resistance to the fracture growth is observed in the piezoceramics under the conditions of the fracture stable growth. The results obtained on the polished samples prove that the mechanical processing introduces the compression surface stresses into the piezoceramic materials [ru

  4. High-Tc ferroelectrics and superconductors

    International Nuclear Information System (INIS)

    Muller, K.A.

    1990-01-01

    The meaning of the title refers to transition temperatures T c in ferroelectrics (FE) and superconductors (S). The highest T c 's in either field are observed in oxides: 1770 K in the ferroelectric La 2 TiO 7 and 125 K in the superconductor Tl 2 Ca 2 Cu 3 O 10 . Therefore, the question can be asked whether the observed high T c 's in oxide FE and S are a pure coincidence or whether there may be an underlying reason for it. This question is addressed first by recalling recent advances concerning anharmonic FE-properties and then by reviewing S-findings in the new compounds related to these properties

  5. Domain switching of fatigued ferroelectric thin films

    Science.gov (United States)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  6. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  7. Fast Ferroelectric L-band Tuner

    International Nuclear Information System (INIS)

    Kazakov, S. Yu.; Yakovlev, V. P.; Hirshfield, J. L.; Kanareykin, A. D.; Nenasheva, E. A.

    2006-01-01

    Description is given of a preliminary conceptual design for a tuner that employs a new ferroelectric ceramic that allows fast changes in coupling between the SRF acceleration structure of a linac and the external RF feeding line. The switching time of this device is in the range of a few microseconds. Utilization of this tuner is predicted to decrease Ohmic losses in the acceleration structure and thereby to reduce the power consumption of the linac. Using parameters of the TESLA-800 collider as an example, it is shown that it may be possible to reduce the ac mains power consumption by 12 MW, or about by 10%. The design of the tuner that is described allows reduced pulsed and average heating of the ferroelectric ceramics

  8. Fracture mechanics of piezoelectric and ferroelectric solids

    CERN Document Server

    Fang, Daining

    2013-01-01

    Fracture Mechanics of Piezoelectric and Ferroelectric Solids presents a systematic and comprehensive coverage of the fracture mechanics of piezoelectric/ferroelectric materials, which includes the theoretical analysis, numerical computations and experimental observations. The main emphasis is placed on the mechanics description of various crack problems such static, dynamic and interface fractures as well as the physical explanations for the mechanism of electrically induced fracture. The book is intended for postgraduate students, researchers and engineers in the fields of solid mechanics, applied physics, material science and mechanical engineering. Dr. Daining Fang is a professor at the School of Aerospace, Tsinghua University, China; Dr. Jinxi Liu is a professor at the Department of Engineering Mechanics, Shijiazhuang Railway Institute, China.

  9. Light-Activated Gigahertz Ferroelectric Domain Dynamics

    Science.gov (United States)

    Akamatsu, Hirofumi; Yuan, Yakun; Stoica, Vladimir A.; Stone, Greg; Yang, Tiannan; Hong, Zijian; Lei, Shiming; Zhu, Yi; Haislmaier, Ryan C.; Freeland, John W.; Chen, Long-Qing; Wen, Haidan; Gopalan, Venkatraman

    2018-03-01

    Using time- and spatially resolved hard x-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO3 are simultaneously captured on subnanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photoinduced electric field of up to 20 ×106 V /m is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling method is developed that reveals the microscopic origin of these dynamics, leading to gigahertz polarization and elastic waves traveling in the crystal with sonic speeds and spatially varying frequencies. The advances in spatiotemporal imaging and dynamical modeling tools open up opportunities for disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains.

  10. Nanostructured Materials for Magnetoelectronics

    CERN Document Server

    Mikailzade, Faik

    2013-01-01

    This book provides an up-to-date review of nanometer-scale magnetism and focuses on the investigation of the basic properties of magnetic nanostructures. It describes a wide range of physical aspects together with theoretical and experimental methods. A broad overview of the latest developments in this emerging and fascinating field of nanostructured materials is given with emphasis on the practical understanding and operation of submicron devices based on nanostructured magnetic materials.

  11. High temperature phases in PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    2003-01-01

    Roč. 293, - (2003), s. 111-118 ISSN 0015-0193 R&D Projects: GA ČR GP202/02/D078; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.406, year: 2003

  12. Injection moulding antireflective nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Clausen, Jeppe Sandvik; Mortensen, N. Asger

    2014-01-01

    We present a method for injection moulding antireflective nanostructures on large areas, for high volume production. Nanostructured black silicon masters were fabricated by mask-less reactive ion etching, and electroplated with nickel. The nickel shim was antistiction coated and used in an inject......We present a method for injection moulding antireflective nanostructures on large areas, for high volume production. Nanostructured black silicon masters were fabricated by mask-less reactive ion etching, and electroplated with nickel. The nickel shim was antistiction coated and used...

  13. Injection moulding antireflective nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Clausen, Jeppe Sandvik; Mortensen, N. Asger

    We present a method for injection moulding antireflective nanostructures on large areas, for high volume production. Nanostructured black silicon masters were fabricated by mask-less reactive ion etching, and electroplated with nickel. The nickel shim was antistiction coated and used in an inject......We present a method for injection moulding antireflective nanostructures on large areas, for high volume production. Nanostructured black silicon masters were fabricated by mask-less reactive ion etching, and electroplated with nickel. The nickel shim was antistiction coated and used...

  14. Ferroelectricity with Ferromagnetic Moment in Orthoferrites

    Science.gov (United States)

    Tokunaga, Yusuke

    2010-03-01

    Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

  15. Nanostructured layers of thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Urban, Jeffrey J.; Lynch, Jared; Coates, Nelson; Forster, Jason; Sahu, Ayaskanta; Chabinyc, Michael; Russ, Boris

    2018-01-30

    This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.

  16. Embedding beyond electrostatics

    DEFF Research Database (Denmark)

    Nåbo, Lina J.; Olsen, Jógvan Magnus Haugaard; Holmgaard List, Nanna

    2016-01-01

    We study excited states of cholesterol in solution and show that, in this specific case, solute wave-function confinement is the main effect of the solvent. This is rationalized on the basis of the polarizable density embedding scheme, which in addition to polarizable embedding includes non-electrostatic...... repulsion that effectively confines the solute wave function to its cavity. We illustrate how the inclusion of non-electrostatic repulsion results in a successful identification of the intense π → π∗ transition, which was not possible using an embedding method that only includes electrostatics....... This underlines the importance of non-electrostatic repulsion in quantum-mechanical embedding-based methods....

  17. Embedded systems handbook

    CERN Document Server

    Zurawski, Richard

    2005-01-01

    Embedded systems are nearly ubiquitous, and books on individual topics or components of embedded systems are equally abundant. Unfortunately, for those designers who thirst for knowledge of the big picture of embedded systems there is not a drop to drink. Until now. The Embedded Systems Handbook is an oasis of information, offering a mix of basic and advanced topics, new solutions and technologies arising from the most recent research efforts, and emerging trends to help you stay current in this ever-changing field.With preeminent contributors from leading industrial and academic institutions

  18. Web Server Embedded System

    Directory of Open Access Journals (Sweden)

    Adharul Muttaqin

    2014-07-01

    Full Text Available Abstrak Embedded sistem saat ini menjadi perhatian khusus pada teknologi komputer, beberapa sistem operasi linux dan web server yang beraneka ragam juga sudah dipersiapkan untuk mendukung sistem embedded, salah satu aplikasi yang dapat digunakan dalam operasi pada sistem embedded adalah web server. Pemilihan web server pada lingkungan embedded saat ini masih jarang dilakukan, oleh karena itu penelitian ini dilakukan dengan menitik beratkan pada dua buah aplikasi web server yang tergolong memiliki fitur utama yang menawarkan “keringanan” pada konsumsi CPU maupun memori seperti Light HTTPD dan Tiny HTTPD. Dengan menggunakan parameter thread (users, ramp-up periods, dan loop count pada stress test embedded system, penelitian ini menawarkan solusi web server manakah diantara Light HTTPD dan Tiny HTTPD yang memiliki kecocokan fitur dalam penggunaan embedded sistem menggunakan beagleboard ditinjau dari konsumsi CPU dan memori. Hasil penelitian menunjukkan bahwa dalam hal konsumsi CPU pada beagleboard embedded system lebih disarankan penggunaan Light HTTPD dibandingkan dengan tiny HTTPD dikarenakan terdapat perbedaan CPU load yang sangat signifikan antar kedua layanan web tersebut Kata kunci: embedded system, web server Abstract Embedded systems are currently of particular concern in computer technology, some of the linux operating system and web server variegated also prepared to support the embedded system, one of the applications that can be used in embedded systems are operating on the web server. Selection of embedded web server on the environment is still rarely done, therefore this study was conducted with a focus on two web application servers belonging to the main features that offer a "lightness" to the CPU and memory consumption as Light HTTPD and Tiny HTTPD. By using the parameters of the thread (users, ramp-up periods, and loop count on a stress test embedded systems, this study offers a solution of web server which between the Light

  19. Embedded systems handbook networked embedded systems

    CERN Document Server

    Zurawski, Richard

    2009-01-01

    Considered a standard industry resource, the Embedded Systems Handbook provided researchers and technicians with the authoritative information needed to launch a wealth of diverse applications, including those in automotive electronics, industrial automated systems, and building automation and control. Now a new resource is required to report on current developments and provide a technical reference for those looking to move the field forward yet again. Divided into two volumes to accommodate this growth, the Embedded Systems Handbook, Second Edition presents a comprehensive view on this area

  20. The data embedding method

    Energy Technology Data Exchange (ETDEWEB)

    Sandford, M.T. II; Bradley, J.N.; Handel, T.G.

    1996-06-01

    Data embedding is a new steganographic method for combining digital information sets. This paper describes the data embedding method and gives examples of its application using software written in the C-programming language. Sandford and Handel produced a computer program (BMPEMBED, Ver. 1.51 written for IBM PC/AT or compatible, MS/DOS Ver. 3.3 or later) that implements data embedding in an application for digital imagery. Information is embedded into, and extracted from, Truecolor or color-pallet images in Microsoft{reg_sign} bitmap (.BMP) format. Hiding data in the noise component of a host, by means of an algorithm that modifies or replaces the noise bits, is termed {open_quote}steganography.{close_quote} Data embedding differs markedly from conventional steganography, because it uses the noise component of the host to insert information with few or no modifications to the host data values or their statistical properties. Consequently, the entropy of the host data is affected little by using data embedding to add information. The data embedding method applies to host data compressed with transform, or {open_quote}lossy{close_quote} compression algorithms, as for example ones based on discrete cosine transform and wavelet functions. Analysis of the host noise generates a key required for embedding and extracting the auxiliary data from the combined data. The key is stored easily in the combined data. Images without the key cannot be processed to extract the embedded information. To provide security for the embedded data, one can remove the key from the combined data and manage it separately. The image key can be encrypted and stored in the combined data or transmitted separately as a ciphertext much smaller in size than the embedded data. The key size is typically ten to one-hundred bytes, and it is in data an analysis algorithm.

  1. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  2. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K. (Kamal); Blom, P.W.M.; Leeuw, de D.M.

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  3. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  4. Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions

    International Nuclear Information System (INIS)

    Zou Ya-Yi; Zhou Yan; Chew Khian-Hooi

    2013-01-01

    We investigate the dynamic characteristics of electric polarization P(t) in a ferroelectric junction under ac applied voltage and stress, and calculate the frequency response and the cut-off frequency f 0 , which provides a reference for the upper limit of the working frequency. Our study might be significant for sensor and memory applications of nanodevices based on ferroelectric junctions

  5. Geometric shape control of thin film ferroelectrics and resulting structures

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  6. Ferroelectrics: A pathway to switchable surface chemistry and catalysis

    Science.gov (United States)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

    2016-08-01

    It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

  7. Guest–host interaction in ferroelectric liquid crystal–nanoparticle

    Indian Academy of Sciences (India)

    Ferroelectric Cu-doped ZnO (Cu–ZnO) nanoparticles have been added to the pure ferroelectric liquid crystal (FLC) Felix 17/100. The nanoparticles are bigger in size as compared to FLC molecules; therefore, they distort the existing geometry of FLC matrix and set up an antiparallel correlation with the dipole moments of the ...

  8. Functional Properties of Polydomain Ferroelectric Oxide Thin Films

    NARCIS (Netherlands)

    Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

    2017-01-01

    The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

  9. Enhanced magnetic and ferroelectric properties in scandium doped nano Bi2Fe4O9

    International Nuclear Information System (INIS)

    Dutta, Dimple P.; Sudakar, C.; Mocherla, Pavana S.V.; Mandal, Balaji P.; Jayakumar, Onnatu D.; Tyagi, Avesh K.

    2012-01-01

    In this study we report the synthesis of undoped and Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles using sonochemical technique. X-ray diffraction reveals that all samples are single phase with no impurities detected. EDS analysis was done to confirm the extent of Sc 3+ doping in the samples. The size and morphology of the nanoparticles have been analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Bi 2 Fe 4 O 9 nanoparticles show a weak ferromagnetic behavior at room temperature, which is quite different from the linear M–H relationship reported for bulk Bi 2 Fe 4 O 9 . A magnetization of 0.144 μB/f.u. is obtained at 300 K, which is mainly attributed to the uncompensated moments at the disordered particle surface resulting from the reduced coordination of the surface spins, arising due to lattice strain or oxygen deficiency. Addition of Sc 3+ dopant in varying concentrations in these Bi 2 Fe 4 O 9 nanoparticles, improves their magnetic as well as ferroelectric properties. The leakage current is considerably reduced and electric polarization increases significantly in case of Bi 2 Fe 4(1−x) Sc x O 9 (x = 0.1) nanoparticles. Thus it can be inferred that Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles shows promise as good multiferroic materials. -- Graphical abstract: Undoped and Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles have been synthesized using sonochemical technique. The bi-functionalities of Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles have been demonstrated. The Bi 2 Fe 4(1−x) Sc x O 9 (x = 0.1) nanoparticles showed enhanced magnetic and ferroelectric properties with considerably less lossy characteristics compared to the bulk Bi 2 Fe 4 O 9 . Highlights: ► Phase pure Bi 2 Fe 4 O 9 nanostructures synthesized using a facile sonochemical technique. ► Nanoparticles show a weak ferromagnetic order at room temperature. ► Sc 3+ doping in Bi 2 Fe 4 O 9 nanoparticles alters their magnetic and ferroelectric properties. ► A

  10. Smart Multicore Embedded Systems

    DEFF Research Database (Denmark)

    This book provides a single-source reference to the state-of-the-art of high-level programming models and compilation tool-chains for embedded system platforms. The authors address challenges faced by programmers developing software to implement parallel applications in embedded systems, where ve...

  11. Temperature dependence of electronic transport property in ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

    2014-10-15

    Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

  12. An Automated Ab Initio Framework for Identifying New Ferroelectrics

    Science.gov (United States)

    Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

    Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

  13. Embedded engineering education

    CERN Document Server

    Kaštelan, Ivan; Temerinac, Miodrag; Barak, Moshe; Sruk, Vlado

    2016-01-01

    This book focuses on the outcome of the European research project “FP7-ICT-2011-8 / 317882: Embedded Engineering Learning Platform” E2LP. Additionally, some experiences and researches outside this project have been included. This book provides information about the achieved results of the E2LP project as well as some broader views about the embedded engineering education. It captures project results and applications, methodologies, and evaluations. It leads to the history of computer architectures, brings a touch of the future in education tools and provides a valuable resource for anyone interested in embedded engineering education concepts, experiences and material. The book contents 12 original contributions and will open a broader discussion about the necessary knowledge and appropriate learning methods for the new profile of embedded engineers. As a result, the proposed Embedded Computer Engineering Learning Platform will help to educate a sufficient number of future engineers in Europe, capable of d...

  14. Embedded Linux in het onderwijs

    NARCIS (Netherlands)

    Dr Ruud Ermers

    2008-01-01

    Embedded Linux wordt bij steeds meer grote bedrijven ingevoerd als embedded operating system. Binnen de opleiding Technische Informatica van Fontys Hogeschool ICT is Embedded Linux geïntroduceerd in samenwerking met het lectoraat Architectuur van Embedded Systemen. Embedded Linux is als vakgebied

  15. Texture and anisotropy in ferroelectric lead metaniobate

    Science.gov (United States)

    Iverson, Benjamin John

    Ferroelectric lead metaniobate, PbNb2O6, is a piezoelectric ceramic typically used because of its elevated Curie temperature and anisotropic properties. However, the piezoelectric constant, d33, is relatively low in randomly oriented ceramics when compared to other ferroelectrics. Crystallographic texturing is often employed to increase the piezoelectric constant because the spontaneous polarization axes of grains are better aligned. In this research, crystallographic textures induced through tape casting are distinguished from textures induced through electrical poling. Texture is described using multiple quantitative approaches utilizing X-ray and neutron time-of-flight diffraction. Tape casting lead metaniobate with an inclusion of acicular template particles induces an orthotropic texture distribution. Templated grain growth from seed particles oriented during casting results in anisotropic grain structures. The degree of preferred orientation is directly linked to the shear behavior of the tape cast slurry. Increases in template concentration, slurry viscosity, and casting velocity lead to larger textures by inducing more particle orientation in the tape casting plane. The maximum 010 texture distributions were two and a half multiples of a random distribution. Ferroelectric texture was induced by electrical poling. Electric poling increases the volume of material oriented with the spontaneous polarization direction in the material. Samples with an initial paraelectric texture exhibit a greater change in the domain volume fraction during electrical poling than randomly oriented ceramics. In tape cast samples, the resulting piezoelectric response is proportional to the 010 texture present prior to poling. This results in property anisotropy dependent on initial texture. Piezoelectric properties measured on the most textured ceramics were similar to those obtained with a commercial standard.

  16. Structural and electronic parameters of ferroelectric KWOF

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Aleksandrov, K. S.

    2010-11-01

    The low-temperature ferroelectric G2 polymorph of K 3WO 3F 3 oxyfluoride is formed by chemical synthesis. The electronic parameters of G2-K 3WO 3F 3 have been measured by X-ray photoelectron spectroscopy under excitation with Al Kα radiation (1486.6 eV). Detailed spectra have been recorded for all element core levels and Auger lines. The chemical bonding effects in the WO 3F 3 and WO 6 octahedrons are considered by using the binding energy difference ΔBE(O-W)=BE(O 1s)-BE(W 4f).

  17. Brauer type embedding problems

    CERN Document Server

    Ledet, Arne

    2005-01-01

    This monograph is concerned with Galois theoretical embedding problems of so-called Brauer type with a focus on 2-groups and on finding explicit criteria for solvability and explicit constructions of the solutions. The advantage of considering Brauer type embedding problems is their comparatively simple condition for solvability in the form of an obstruction in the Brauer group of the ground field. This book presupposes knowledge of classical Galois theory and the attendant algebra. Before considering questions of reducing the embedding problems and reformulating the solvability criteria, the

  18. Time-dependent embedding

    OpenAIRE

    Inglesfield, J. E.

    2007-01-01

    A method of solving the time-dependent Schr\\"odinger equation is presented, in which a finite region of space is treated explicitly, with the boundary conditions for matching the wave-functions on to the rest of the system replaced by an embedding term added on to the Hamiltonian. This time-dependent embedding term is derived from the Fourier transform of the energy-dependent embedding potential, which embeds the time-independent Schr\\"odinger equation. Results are presented for a one-dimensi...

  19. Electronics for embedded systems

    CERN Document Server

    Bindal, Ahmet

    2017-01-01

    This book provides semester-length coverage of electronics for embedded systems, covering most common analog and digital circuit-related issues encountered while designing embedded system hardware. It is written for students and young professionals who have basic circuit theory background and want to learn more about passive circuits, diode and bipolar transistor circuits, the state-of-the-art CMOS logic family and its interface with older logic families such as TTL, sensors and sensor physics, operational amplifier circuits to condition sensor signals, data converters and various circuits used in electro-mechanical device control in embedded systems. The book also provides numerous hardware design examples by integrating the topics learned in earlier chapters. The last chapter extensively reviews the combinational and sequential logic design principles to be able to design the digital part of embedded system hardware.

  20. Embedded Fragments Registry (EFR)

    Data.gov (United States)

    Department of Veterans Affairs — In 2009, the Department of Defense estimated that approximately 40,000 service members who served in OEF/OIF may have embedded fragment wounds as the result of small...

  1. Smart Multicore Embedded Systems

    DEFF Research Database (Denmark)

    This book provides a single-source reference to the state-of-the-art of high-level programming models and compilation tool-chains for embedded system platforms. The authors address challenges faced by programmers developing software to implement parallel applications in embedded systems, where very...... specificities of various embedded systems from different industries. Parallel programming tool-chains are described that take as input parameters both the application and the platform model, then determine relevant transformations and mapping decisions on the concrete platform, minimizing user intervention...... and hiding the difficulties related to the correct and efficient use of memory hierarchy and low level code generation. Describes tools and programming models for multicore embedded systems Emphasizes throughout performance per watt scalability Discusses realistic limits of software parallelization Enables...

  2. Transformable ferroelectric control of dynamic magnetic permeability

    Science.gov (United States)

    Jiang, Changjun; Jia, Chenglong; Wang, Fenglong; Zhou, Cai; Xue, Desheng

    2018-02-01

    Magnetic permeability, which measures the response of a material to an applied magnetic field, is crucial to the performance of magnetic devices and related technologies. Its dynamic value is usually a complex number with real and imaginary parts that describe, respectively, how much magnetic power can be stored and lost in the material. Control of permeability is therefore closely related to energy redistribution within a magnetic system or energy exchange between magnetic and other degrees of freedom via certain spin-dependent interactions. To avoid a high power consumption, direct manipulation of the permeability with an electric field through magnetoelectric coupling leads to high efficiency and simple operation, but remains a big challenge in both the fundamental physics and material science. Here we report unambiguous evidence of ferroelectric control of dynamic magnetic permeability in a Co /Pb (Mg1/3Nb2/3) 0.7Ti0.3O3 (Co/PMN-PT) heterostructure, in which the ferroelectric PMN-PT acts as an energy source for the ferromagnetic Co film via an interfacial linear magnetoelectric interaction. The electric field tuning of the magnitude and line shape of the permeability offers a highly localized means of controlling magnetization with ultralow power consumption. Additionally, the emergence of negative permeability promises a new way of realizing functional nanoscale metamaterials with adjustable refraction index.

  3. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W.B.; Johnston, P.N.; Walker, S.R.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J.F. [New South Wales Univ., Kensington, NSW (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1996-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  4. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W B; Johnston, P N; Walker, S R; Bubb, I F [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J F [New South Wales Univ., Kensington, NSW (Australia); Cohen, D D; Dytlewski, N [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1997-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  5. Mechanisms of aging and fatigue in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Genenko, Yuri A. [Sonderforschungsbereich 595, Institut für Materialwissenschaft, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Glaum, Julia [Department of Materials Science and Engineering, University of New South Wales, Sydney (Australia); Hoffmann, Michael J. [Institut für keramische Werkstoffe, Haid-und-Neu Str. 7, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Albe, Karsten, E-mail: albe@mm.tu-darmstadt.de [Sonderforschungsbereich 595, Institut für Materialwissenschaft, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2015-02-15

    Highlights: • Experiments on aging and fatigue of bulk ferroelectrics are thoroughly reviewed. • Lead-based PZT and lead-free BNT–BT and KNN materials are covered. • Various fatigue regimes and factors are classified. • Defect associate formation and alignment are analyzed by density functional theory. • Emerging of internal bias field is studied within drift-diffusion approach. - Abstract: A comprehensive review of aging and fatigue phenomena in bulk polycrystalline ferroelectrics is presented. Three material classes are covered, namely the most widely used Pb[Zr{sub 1−x}Ti{sub x}]O{sub 3} (PZT) ceramics and lead-free materials, including those based on bismuth sodium titanate Bi{sub 1/2}Na{sub 1/2}TiO{sub 3} (BNT) and alkali niobate [K{sub x}Na{sub 1−x}]NbO{sub 3} (KNN). Aging is studied in poled and unpoled states both experimentally and theoretically. The variety of different loading regimes for fatigue includes DC electric field, unipolar, sesquipolar and bipolar cycling and all these differently combined with mechanical loading at different frequencies and temperatures. The role of device geometries and electrode materials is addressed and models describing charge migration and defect dipole re-orientation are discussed in the context of recent experimental studies.

  6. Mechanisms of aging and fatigue in ferroelectrics

    International Nuclear Information System (INIS)

    Genenko, Yuri A.; Glaum, Julia; Hoffmann, Michael J.; Albe, Karsten

    2015-01-01

    Highlights: • Experiments on aging and fatigue of bulk ferroelectrics are thoroughly reviewed. • Lead-based PZT and lead-free BNT–BT and KNN materials are covered. • Various fatigue regimes and factors are classified. • Defect associate formation and alignment are analyzed by density functional theory. • Emerging of internal bias field is studied within drift-diffusion approach. - Abstract: A comprehensive review of aging and fatigue phenomena in bulk polycrystalline ferroelectrics is presented. Three material classes are covered, namely the most widely used Pb[Zr 1−x Ti x ]O 3 (PZT) ceramics and lead-free materials, including those based on bismuth sodium titanate Bi 1/2 Na 1/2 TiO 3 (BNT) and alkali niobate [K x Na 1−x ]NbO 3 (KNN). Aging is studied in poled and unpoled states both experimentally and theoretically. The variety of different loading regimes for fatigue includes DC electric field, unipolar, sesquipolar and bipolar cycling and all these differently combined with mechanical loading at different frequencies and temperatures. The role of device geometries and electrode materials is addressed and models describing charge migration and defect dipole re-orientation are discussed in the context of recent experimental studies

  7. Ultrahigh piezoelectricity in ferroelectric ceramics by design

    Science.gov (United States)

    Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R.; Zhang, Shujun

    2018-03-01

    Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d33 of up to 1,500 pC N-1 and dielectric permittivity ɛ33/ɛ0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

  8. Ferroelectric based catalysis: Switchable surface chemistry

    Science.gov (United States)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  9. Nanopolar reorientation in ferroelectric thin films

    International Nuclear Information System (INIS)

    Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

    2001-01-01

    The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

  10. Self-assembled nanostructures

    CERN Document Server

    Zhang, Jin Z; Liu, Jun; Chen, Shaowei; Liu, Gang-yu

    2003-01-01

    Nanostructures refer to materials that have relevant dimensions on the nanometer length scales and reside in the mesoscopic regime between isolated atoms and molecules in bulk matter. These materials have unique physical properties that are distinctly different from bulk materials. Self-Assembled Nanostructures provides systematic coverage of basic nanomaterials science including materials assembly and synthesis, characterization, and application. Suitable for both beginners and experts, it balances the chemistry aspects of nanomaterials with physical principles. It also highlights nanomaterial-based architectures including assembled or self-assembled systems. Filled with in-depth discussion of important applications of nano-architectures as well as potential applications ranging from physical to chemical and biological systems, Self-Assembled Nanostructures is the essential reference or text for scientists involved with nanostructures.

  11. Ferroelectric properties of tungsten bronze morphotropic phase boundary systems

    International Nuclear Information System (INIS)

    Oliver, J.R.; Neurgaonkar, R.R.; Cross, L.E.; Pennsylvania State Univ., University Park, PA

    1989-01-01

    Tungsten bronze ferroelectrics which have a morphotropic phase boundary (MPB) can have a number or enhanced dielectric, piezoelectric, and electrooptic properties compared to more conventional ferroelectric materials. The structural and ferroelectric properties of several MPB bronze systems are presented, including data from sintered and hot-pressed ceramics, epitaxial thin films, and bulk single crystals. Included among these are three systems which had not been previously identified as morphotropic. The potential advantages and limitations of these MPB systems are discussed, along with considerations of the appropriate growth methods for their possible utilization in optical, piezoelectric, or pyroelectric device applications

  12. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  13. The lineshape of inelastic neutron scattering in the relaxor ferroelectrics

    International Nuclear Information System (INIS)

    Ivanov, M.A.; Kozlovski, M.; Piesiewicz, T.; Stephanovich, V.A.; Weron, A.; Wymyslowski, A.

    2005-01-01

    The possibilities of theoretical and experimental investigations of relaxor ferroelectrics by inelastic neutron scattering method are considered. The simple model to description of the peculiarities of inelastic neutron scattering lineshapes in ferroelectric relaxors is suggested. The essence of this model is to consider the interaction of the phonon subsystem of relaxor ferroelectrics with the ensemble of defects and impurities. The modification of the Latin Hypercube Sampling (LHS) method is presented. The optimization of planning of experiment by the modified LHS method is considered [ru

  14. Conformal growth method of ferroelectric materials for multifunctional composites

    Science.gov (United States)

    Bowland, Christopher Charles

    Multifunctional composites are the next generation of composites and aim to simultaneously meet multiple performance objectives to create system-level performance enhancements. Current fiber-reinforced composites have offered improved efficiency and performance through weight reduction and increased strength. However, these composites satisfy singular performance objectives. Therefore, the concept of multifunctional composites was developed as an approach to create components in a system that serve multiple functions. These composites aim to reduce the required components in a system by integrating unifunctional components together thus reducing the weight and complexity of the system as a whole. This work offers an approach to create multifunctional composites through the development of a structural, multifunctional fiber. This is achieved by synthesizing a ferroelectric material on the surface of carbon fiber. In this work, a two-step hydrothermal reaction is developed for synthesizing a conformal film of barium titanate (BaTiO3) on the surface of carbon fiber. A fundamental understanding of this hydrothermal process is performed on planar substrates leading to the development of processing parameters that result in epitaxial-type growth of highly-aligned BaTiO3 nanowires. This work establishes the hydrothermal reaction as a powerful synthesis technique for generating nanostructured BaTiO3 on carbon fiber creating a novel, multifunctional fiber. A reaction optimization process leads to the development of parameters that stabilize tetragonal phase BaTiO3 without the need for subsequent heat treatments. The application potential of these fibers is illustrated with both single fibers and woven fabrics. Single fiber cantilever beams are fabricated and subjected to vibrations to determine its voltage output with the ultimate goal of producing an air flow sensor. Carbon fiber reinforced composite integration is carried out by scaling up the hydrothermal reaction to

  15. On bistable states retention in ferroelectric Langmuir-Blodgett films

    Science.gov (United States)

    Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

    2003-08-01

    A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

  16. Ferroelectric relaxor Ba(TiCe)O3

    International Nuclear Information System (INIS)

    Chen Ang; Zhi Jing; Yu Zhi

    2002-01-01

    The dielectric behaviour of Ba(Ti 1-y Ce y )O 3 solid solutions (y=0-0.3) has been studied. A small amount of Ce doping (y=0.02) has weak influence on the dielectric behaviour of Ba(Ti 1-y Ce y )O 3 . With increasing Ce concentration, three phase transitions of pure BaTiO 3 are pinched into one rounded dielectric peak with frequency dispersion, and the relaxation time follows the Vogel-Fulcher relation. The evolution from a normal ferroelectric to a ferroelectric relaxor is emphasized. High strains (S=∼0.1-0.19%) with a small hysteresis under ac fields are obtained in ferroelectric relaxors Ba(Ti 1-y Ce y )O 3 . The physical mechanism of the relaxation process, the pinching effect of the phase transitions and their influence on the ferroelectric and electrostrictive behaviour are discussed. (author)

  17. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  18. Fast Ferroelectric L-Band Tuner for ILC Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L

    2010-03-15

    Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

  19. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

  20. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  1. Concurrent transition of ferroelectric and magnetic ordering near room temperature.

    Science.gov (United States)

    Ko, Kyung-Tae; Jung, Min Hwa; He, Qing; Lee, Jin Hong; Woo, Chang Su; Chu, Kanghyun; Seidel, Jan; Jeon, Byung-Gu; Oh, Yoon Seok; Kim, Kee Hoon; Liang, Wen-I; Chen, Hsiang-Jung; Chu, Ying-Hao; Jeong, Yoon Hee; Ramesh, Ramamoorthy; Park, Jae-Hoon; Yang, Chan-Ho

    2011-11-29

    Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

  2. A prediction of rate-dependent behaviour in ferroelectric polycrystals

    International Nuclear Information System (INIS)

    Kim, Sang-Joo

    2007-01-01

    Rate-dependent behaviour of a polycrystalline ferroelectric material is predicted based on thermal activation theory and a representative volume element model. First, the behaviour of a ferroelectric single crystal is calculated from a recently proposed three-dimensional free energy model [S.J. Kim, S. Seelecke, Int. J. Solids Struct. 44 (2007) 1196-1209]. Then, from the calculated single crystal responses, poling behaviour of a ferroelectric polycrystal is obtained in three different ways, two representative volume element models and Gaussian integration method. It is found that a dodecahedron representative volume element consisting of 210 crystallites is the best choice among the three methods. Finally, the behaviour of a ferroelectric polycrystal under various electric and stress loads is calculated using the chosen RVE model. The calculated responses are compared qualitatively with experimental observations, and the effects of crystal orientation and polycrystallinity are discussed

  3. Embedded Systems Design: Optimization Challenges

    DEFF Research Database (Denmark)

    Pop, Paul

    2005-01-01

    Summary form only given. Embedded systems are everywhere: from alarm clocks to PDAs, from mobile phones to cars, almost all the devices we use are controlled by embedded systems. Over 99% of the microprocessors produced today are used in embedded systems, and recently the number of embedded systems...

  4. Embedded scattering eigenstates using resonant metasurfaces

    Science.gov (United States)

    Krasnok, Alex; Alú, Andrea

    2018-06-01

    Optical embedded eigenstates (EEs) are localized modes of an open structure that are compatible to radiation, yet they have infinite lifetime and diverging quality factors. Their realization in nanostructures finite in all dimensions is inherently challenging, because they require materials with extreme electromagnetic properties. Here we explore the realization of these bound states in the continuum using ultrathin metasurfaces composed of arrays of nanoparticles. We first show that arrays of lossless nanoparticles can realize the condition for EEs, and then explore the use of Ag nanoparticles coated with gain media shells to compensate material loss and revive the EE despite realistic loss in plasmonic materials. We discuss the possible experimental realization of the proposed structures, and provide useful guidelines for practical implementation in nanophotonics systems with largely enhanced light–matter interactions. These metasurfaces may lead to highly efficient lasers, filters, frequency comb generation and sensors.

  5. Differential geometric aspects of the theory of ferroelectricity

    International Nuclear Information System (INIS)

    Khosiainov, V.T.

    1988-11-01

    In connection with the problem of the ferroelectricity a differential formalism is developed as a tool to describe the fine electronic properties in solids. This includes the gauge invariant definition of the differentiation in k-space (position operator), the notion of holonomy group and characteristic gauge field in k-space of electron states. A variational principle and possible solutions of resulting field equations are discussed. A criterion for the appearance of the ferroelectricity is proposed. (author). 5 refs

  6. Effects of Bi doping on dielectric and ferroelectric properties

    Indian Academy of Sciences (India)

    [Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

  7. Evolution of ferroelectric SrBi2Nb2O9 phase embedded in tellurite glass

    Science.gov (United States)

    Mohamed, E. A.

    2017-12-01

    Glasses with the composition, [(100-x)TeO2- x(SrO-Bi2O3-Nb2O5)] with x = 20, 30 and 40 (in mol %) were prepared. The X-ray diffraction (XRD) pattern and differential thermal analysis (DTA) for the as-prepared samples confirmed the amorphous and glassy characteristics, respectively. The SrBi2Nb2O9 phase in tellurite glass for HT773 sample at x = 40 mol % is formed and confirmed by the Rietveld refinement. DTA curves for all glass samples exhibit two endothermic dips while the two broad exothermic peaks at lower x reduced to one at higher x. Infrared (IR) results revealed that the glassy matrix are composed of TeO3, TeO3+1, TeO4, BiO6 and NbO6 structural units. The changes in the density (ρ), molar volume (Vm), oxygen molar volume (V0) and oxygen packing fraction (OPD) have correlated with structural changes in the glass network. The optical studies show an absorption bands below the absorption edge in the glass samples.

  8. Smart multicore embedded systems

    CERN Document Server

    Bertels, Koen; Karlsson, Sven; Pacull, François

    2014-01-01

    This book provides a single-source reference to the state-of-the-art of high-level programming models and compilation tool-chains for embedded system platforms. The authors address challenges faced by programmers developing software to implement parallel applications in embedded systems, where very often they are forced to rewrite sequential programs into parallel software, taking into account all the low level features and peculiarities of the underlying platforms. Readers will benefit from these authors’ approach, which takes into account both the application requirements and the platform specificities of various embedded systems from different industries. Parallel programming tool-chains are described that take as input parameters both the application and the platform model, then determine relevant transformations and mapping decisions on the concrete platform, minimizing user intervention and hiding the difficulties related to the correct and efficient use of memory hierarchy and low level code generati...

  9. Improper ferroelectrics as high-efficiency energy conversion materials

    Energy Technology Data Exchange (ETDEWEB)

    Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki [Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2017-05-15

    An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O{sub 3} and BaTiO{sub 3}, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca{sub 0.84}Sr{sub 0.16}){sub 8}[AlO{sub 2}]{sub 12}(MoO{sub 4}){sub 2} (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  11. Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

    International Nuclear Information System (INIS)

    Wang Longxiang; Yang Xiangbo; Chen Tongsheng

    2009-01-01

    In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

  12. Improper ferroelectrics as high-efficiency energy conversion materials

    International Nuclear Information System (INIS)

    Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki

    2017-01-01

    An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O_3 and BaTiO_3, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca_0_._8_4Sr_0_._1_6)_8[AlO_2]_1_2(MoO_4)_2 (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

    Science.gov (United States)

    Yusuf, Mohammed; Du, Xu; Dawber, Matthew

    2013-03-01

    Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

  14. Modelling of creep hysteresis in ferroelectrics

    Science.gov (United States)

    He, Xuan; Wang, Dan; Wang, Linxiang; Melnik, Roderick

    2018-05-01

    In the current paper, a macroscopic model is proposed to simulate the hysteretic dynamics of ferroelectric ceramics with creep phenomenon incorporated. The creep phenomenon in the hysteretic dynamics is attributed to the rate-dependent characteristic of the polarisation switching processes induced in the materials. A non-convex Helmholtz free energy based on Landau theory is proposed to model the switching dynamics. The governing equation of single-crystal model is formulated by applying the Euler-Lagrange equation. The polycrystalline model is obtained by combining the single crystal dynamics with a density function which is constructed to model the weighted contributions of different grains with different principle axis orientations. In addition, numerical simulations of hysteretic dynamics with creep phenomenon are presented. Comparison of the numerical results and their experimental counterparts is also presented. It is shown that the creep phenomenon is captured precisely, validating the capability of the proposed model in a range of its potential applications.

  15. Efficient photoemission from robust ferroelectric ceramics

    International Nuclear Information System (INIS)

    Boscolo, I.; Castellano, M.; Catani, L.; Ferrario, M.; Tazzioli, F.; Giannessi, L.

    1999-01-01

    Experimental results on photoemission by ferroelectric ceramic disks, with a possible interpretation, are present. Two types of lead zirconate titanate lanthanum doped, PLZT, ceramics have been used for tests. 25 ps light pulses of 532 and 355 nm were used for excitation. The intensity ranged within the interval 0.1-3 GW/cm 2. The upper limit of the intensity was established by the damage threshold tested by the onset of ion emission. At low value of the intensity the yield was comparable at the two wavelengths. At the highest intensity of green light the emitted charge was 1 nC per 10 mm 2, but it was limited by the space charge effect. In fact, the applied field was only 20 kV/cm, allowed both by the mechanical design of the apparatus and the poor vacuum, 10 - 4 mbar. No surface processing was required. The measurement of the electron pulse length under way

  16. Lithium niobate. Defects, photorefraction and ferroelectric switching

    Energy Technology Data Exchange (ETDEWEB)

    Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

    2008-07-01

    The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

  17. Radiation evaluation of commercial ferroelectric nonvolatile memories

    International Nuclear Information System (INIS)

    Benedetto, J.M.; DeLancey, W.M.; Oldham, T.R.; McGarrity, J.M.; Tipton, C.W.; Brassington, M.; Fisch, D.E.

    1991-01-01

    This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process

  18. Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

    DEFF Research Database (Denmark)

    Liu, Guangqing; Zhang, Qi; Huang, Hsin-Hui

    2016-01-01

    Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3...... large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design...... and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties....

  19. Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach

    Directory of Open Access Journals (Sweden)

    V. Nagarajan

    2014-06-01

    Full Text Available The realistic InSb nanostructures namely InSb nanoring, InSb nanocube, InSb nanocube-18, InSb nanosheet, InSb nanocage and InSb nanocube-27 are simulated and optimized successfully using B3LYP/LanL2DZ basis set. The stability of InSb nanostructures is studied in terms of binding energy, vibrational studies and calculated energy. The electronic properties of InSb nanostructures are discussed using ionization potential, electron affinity and HOMO–LUMO gap. Point symmetry and dipole moment of InSb nanostructures are reported. Incorporation of impurity atom in InSb nanostructures is studied using embedding energy. The present study provides the information regarding the enhanced electronic properties of InSb nanostructure which finds its potential importance in microelectronics and optoelectronic devices.

  20. Acoustic study of nano-crystal embedded PbO–P2O5 glass

    Indian Academy of Sciences (India)

    Unknown

    Keywords. Glasses; acoustical properties; nanostructured materials; glass ceramic. 1. Introduction. During the last two decades, studies of different physical properties of nano-crystal embedded glass matrix have attracted attention of technologists as well as scientists for fabrication of glass ceramic through controlled crysta-.

  1. Polarizable Density Embedding

    DEFF Research Database (Denmark)

    Olsen, Jógvan Magnus Haugaard; Steinmann, Casper; Ruud, Kenneth

    2015-01-01

    We present a new QM/QM/MM-based model for calculating molecular properties and excited states of solute-solvent systems. We denote this new approach the polarizable density embedding (PDE) model and it represents an extension of our previously developed polarizable embedding (PE) strategy. The PDE...... model is a focused computational approach in which a core region of the system studied is represented by a quantum-chemical method, whereas the environment is divided into two other regions: an inner and an outer region. Molecules belonging to the inner region are described by their exact densities...

  2. Nanostructured materials for hydrogen storage

    Science.gov (United States)

    Williamson, Andrew J.; Reboredo, Fernando A.

    2007-12-04

    A system for hydrogen storage comprising a porous nano-structured material with hydrogen absorbed on the surfaces of the porous nano-structured material. The system of hydrogen storage comprises absorbing hydrogen on the surfaces of a porous nano-structured semiconductor material.

  3. Nanostructures from nanoparticles

    International Nuclear Information System (INIS)

    Mendes, Paula M; Chen Yu; Palmer, Richard E; Nikitin, Kirill; Fitzmaurice, Donald; Preece, Jon A

    2003-01-01

    This paper reviews recent experimental approaches to the development of surface nanostructures from nanoparticles. The formation of nanowires by electron beam writing in films of gold nanoparticles passivated with a specially designed class of ligand molecules (dialkyl sulfides) is presented, together with illustrations of practical nanostructures. Potential applications of this methodology are discussed. Another alternative to the controlled fabrication of arrays of nanoparticles, based on nanocrystals which contain molecular recognition elements in the ligand shell, is also surveyed. These particles aggregate in the presence of specifically designed molecular dications which act as a molecular binder. Finally, recent work on the formation of nanoscale surface architectures using x-ray patterning of self-assembled monolayers is introduced. Current and potential future applications of these surface nanostructures are discussed

  4. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    Science.gov (United States)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  5. Embedding JIT into MRP

    NARCIS (Netherlands)

    Flapper, S.D.P.; Miltenburg, G.J.; Wijngaard, J.

    1991-01-01

    Today many companies who are using MRP production control systems are investigating how they can produce some or all of their products using just-in time (JIT) principles. They wonder to what extent MRP can provide support for JIT production. This paper describes how JIT can be embedded into MRP. A

  6. Embedded Multimaterial Extrusion Bioprinting

    NARCIS (Netherlands)

    Rocca, Marco; Fragasso, Alessio; Liu, Wanjun; Heinrich, Marcel A.; Zhang, Yu Shrike

    Embedded extrusion bioprinting allows for the generation of complex structures that otherwise cannot be achieved with conventional layer-by-layer deposition from the bottom, by overcoming the limits imposed by gravitational force. By taking advantage of a hydrogel bath, serving as a sacrificial

  7. Embedded data representations

    DEFF Research Database (Denmark)

    Willett, Wesley; Jansen, Yvonne; Dragicevic, Pierre

    2017-01-01

    We introduce embedded data representations, the use of visual and physical representations of data that are deeply integrated with the physical spaces, objects, and entities to which the data refers. Technologies like lightweight wireless displays, mixed reality hardware, and autonomous vehicles...

  8. Polarizable Density Embedding

    DEFF Research Database (Denmark)

    Reinholdt, Peter; Kongsted, Jacob; Olsen, Jógvan Magnus Haugaard

    2017-01-01

    We analyze the performance of the polarizable density embedding (PDE) model-a new multiscale computational approach designed for prediction and rationalization of general molecular properties of large and complex systems. We showcase how the PDE model very effectively handles the use of large...

  9. Embedded enzymes catalyse capture

    Science.gov (United States)

    Kentish, Sandra

    2018-05-01

    Membrane technologies for carbon capture can offer economic and environmental advantages over conventional amine-based absorption, but can suffer from limited gas flux and selectivity to CO2. Now, a membrane based on enzymes embedded in hydrophilic pores is shown to exhibit combined flux and selectivity that challenges the state of the art.

  10. High-accuracy determination for optical indicatrix rotation in ferroelectric DTGS

    OpenAIRE

    O.S.Kushnir; O.A.Bevz; O.G.Vlokh

    2000-01-01

    Optical indicatrix rotation in deuterated ferroelectric triglycine sulphate is studied with the high-accuracy null-polarimetric technique. The behaviour of the effect in ferroelectric phase is referred to quadratic spontaneous electrooptics.

  11. A novel readout integrated circuit for ferroelectric FPA detector

    Science.gov (United States)

    Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

    2017-11-01

    Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

  12. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

    2016-10-07

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  13. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    International Nuclear Information System (INIS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-01-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  14. "Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

    Science.gov (United States)

    Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

    2018-03-01

    In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

  15. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  16. Nanostructures-History

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Nanostructures-History. Inspiration to Nanotechnology-. The Japanese scientist Norio Taniguchi of the Tokyo University of Science was used the term "nano-technology" in a 1974 conference, to describe semiconductor processes such as thin film His definition was, ...

  17. Alignment structures in ferroelectric liquid crystals

    Energy Technology Data Exchange (ETDEWEB)

    Islam, N.U

    1998-07-01

    Although for many years liquid crystals were of purely scientific interest, they have now become ubiquitous in everyday life. The use of the nematic liquid crystal phase in flat panel display applications has been the main factor in this popularity. However, with the advent of the SuperTwist Nematic (STN) device, the limits to which this phase could be exploited for display applications was perhaps reached. With the discovery by Clark et al. of the Surface Stabilised Ferroelectric Liquid Crystal (SSFLC) configuration, the possibility arose of using chiral smectic liquid crystals to create large area, passively addressed, fast switching, flat panel displays. Unfortunately, the structures that form within smectic liquid crystals, and the dynamics of the switching within these, are still not fully understood. In this thesis we address the former of these, making a detailed the study of the structures that form within tilted smectic liquid crystal devices. We present here the first complete theoretical and experimental study of various different ferroelectric liquid crystal materials, where we employed theoretical models based on a simple set of assumptions to understand the behaviour of a set of increasingly complex experimental systems. We started with the simplest of these, Freely Suspended Smectic Films (FSSFs) and then worked with progressively more realistic systems in the form of homeotropically, and later, homogeneously aligned liquid crystal cells. The equilibrium structures that form get particularly complex in the last case, taking the form of tilted and chevron layering structures. In each of these cases, the predictions of the modelling are compared with our experimental results. Further, we present here the first model of the chevron cusp that seeks to include the effects of biaxiality in the S{sub C} phase. We also present a model that seeks to analyse the stability of the chevron layering structure and its relationship with tilted layers. This includes

  18. Alignment structures in ferroelectric liquid crystals

    International Nuclear Information System (INIS)

    Islam, N.U.

    1998-01-01

    Although for many years liquid crystals were of purely scientific interest, they have now become ubiquitous in everyday life. The use of the nematic liquid crystal phase in flat panel display applications has been the main factor in this popularity. However, with the advent of the SuperTwist Nematic (STN) device, the limits to which this phase could be exploited for display applications was perhaps reached. With the discovery by Clark et al. of the Surface Stabilised Ferroelectric Liquid Crystal (SSFLC) configuration, the possibility arose of using chiral smectic liquid crystals to create large area, passively addressed, fast switching, flat panel displays. Unfortunately, the structures that form within smectic liquid crystals, and the dynamics of the switching within these, are still not fully understood. In this thesis we address the former of these, making a detailed the study of the structures that form within tilted smectic liquid crystal devices. We present here the first complete theoretical and experimental study of various different ferroelectric liquid crystal materials, where we employed theoretical models based on a simple set of assumptions to understand the behaviour of a set of increasingly complex experimental systems. We started with the simplest of these, Freely Suspended Smectic Films (FSSFs) and then worked with progressively more realistic systems in the form of homeotropically, and later, homogeneously aligned liquid crystal cells. The equilibrium structures that form get particularly complex in the last case, taking the form of tilted and chevron layering structures. In each of these cases, the predictions of the modelling are compared with our experimental results. Further, we present here the first model of the chevron cusp that seeks to include the effects of biaxiality in the S C phase. We also present a model that seeks to analyse the stability of the chevron layering structure and its relationship with tilted layers. This includes an

  19. Embedding in thermosetting resins

    International Nuclear Information System (INIS)

    Buzonniere, A. de

    1985-01-01

    Medium activity waste coming either from nuclear power plants in operation such as evaporator concentrates, spent resins, filter cartridges or the dismantling of installations are embedded in order to obtain a product suitable for long term disposal. Embedding in thermosetting resins (polyester or epoxy) is one among currently used techniques; it is being developed by the CEA (Commissariat a l'Energie Atomique) and Technicatome (subsidiary of CEA and EDF). The process is easy to operate and yields excellent results particularly as far as volume reduction and radioelement containment (cesium particularly) are concerned. The process has already been in operation in four stationary plants for several years. Extension of the process to mobile units has been completed by Technicatome in collaboration with the CEA [fr

  20. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  1. Why is the electrocaloric effect so small in ferroelectrics?

    Directory of Open Access Journals (Sweden)

    G. G. Guzmán-Verri

    2016-06-01

    Full Text Available Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

  2. Reversible optical control of macroscopic polarization in ferroelectrics

    Science.gov (United States)

    Rubio-Marcos, Fernando; Ochoa, Diego A.; Del Campo, Adolfo; García, Miguel A.; Castro, Germán R.; Fernández, José F.; García, José E.

    2018-01-01

    The optical control of ferroic properties is a subject of fascination for the scientific community, because it involves the establishment of new paradigms for technology1-9. Domains and domain walls are known to have a great impact on the properties of ferroic materials1-24. Progress is currently being made in understanding the behaviour of the ferroelectric domain wall, especially regarding its dynamic control10-12,17,19. New research is being conducted to find effective methodologies capable of modulating ferroelectric domain motion for future electronics. However, the practical use of ferroelectric domain wall motion should be both stable and reversible (rewritable) and, in particular, be able to produce a macroscopic response that can be monitored easily12,17. Here, we show that it is possible to achieve a reversible optical change of ferroelectric domains configuration. This effect leads to the tuning of macroscopic polarization and its related properties by means of polarized light, a non-contact external control. Although this is only the first step, it nevertheless constitutes the most crucial one in the long and complex process of developing the next generation of photo-stimulated ferroelectric devices.

  3. Controlling the properties of ferroelectric-nickelate interfaces

    Science.gov (United States)

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

    2015-03-01

    Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

  4. Low-energy ion beam synthesis of Ag endotaxial nanostructures in silicon

    Science.gov (United States)

    Nagarajappa, Kiran; Guha, Puspendu; Thirumurugan, Arun; Satyam, Parlapalli V.; Bhatta, Umananda M.

    2018-06-01

    Coherently, embedded metal nanostructures (endotaxial) are known to have potential applications concerning the areas of plasmonics, optoelectronics and thermoelectronics. Incorporating appropriate concentrations of metal atoms into crystalline silicon is critical for these applications. Therefore, choosing proper dose of low-energy ions, instead of depositing thin film as a source of metal atoms, helps in avoiding surplus concentration of metal atoms that diffuses into the silicon crystal. In this work, 30 keV silver negative ions are implanted into a SiO x /Si(100) at two different fluences: 1 × 1015 and 2.5 × 1015 Ag- ions/cm2. Later, the samples are annealed at 700 °C for 1 h in Ar atmosphere. Embedded silver nanostructures have been characterized using planar and cross-sectional TEM (XTEM) analysis. Planar TEM analysis shows the formation of mostly rectangular silver nanostructures following the fourfold symmetry of the substrate. XTEM analysis confirms the formation of prism-shaped silver nanostructures embedded inside crystalline silicon. Endotaxial nature of the embedded crystals has been discussed using selected area electron diffraction analysis.

  5. Free-volume characterization of nanostructurized substances by positron annihilation lifetime spectroscopy

    Science.gov (United States)

    Shpotyuk, O.; Ingram, A.; Shpotyuk, Ya.

    2018-02-01

    Methodological possibilities of positron annihilation lifetime (PAL) spectroscopy are examined to parameterize free-volume structural evolution processes in some nanostructurized substances obeying conversion from positronium (Ps) decaying to positron trapping. Unlike conventional x3-term fitting analysis based on admixed positron trapping and Ps decaying, the effect of nanostructurization is considered as occurring due to conversion from preferential Ps decaying in initial host matrix to positron trapping in modified (nanostructurized) host-guest matrix. The developed approach referred to as x3-x2-CDA (coupling decomposition algorithm) allows estimation defect-free bulk and defect-specific positron lifetimes of free-volume elements responsible for nanostructurization. The applicability of this approach is proved for some nanostructurized materials allowing free-volume changes through Ps-to-positron trapping conversion, such as (i) metallic Ag nanoparticles embedded in polymer matrix, (ii) structure-modification processes caused by swift heavy ions irradiation in polystyrene, and (iii) host-guest chemistry problems like water immersion in alumomagnesium spinel ceramics. This approach is considered to be used as test-indicator, separating processes of host-matrix nanostructurization due to embedded nanoparticles from uncorrelated changes in positron-trapping and Ps-decaying channels.

  6. Electron beam diodes using ferroelectric cathodes

    International Nuclear Information System (INIS)

    Ivers, J.D.; Schaechter, L.; Nation, J.A.; Kerslick, G.S.

    1993-01-01

    A new high current density electron source is investigated. The source consists of a polarized ceramic disk with aluminum electrodes coated on both faces. The front electrode is etched in a periodic grid to expose the ceramic beneath. A rapid change in the polarization state of the ceramic results in the emission of a high density electron cloud into a 1 to 10mm diode gap. The anode potential is maintained by a charged transmission line. Some of the emitted electrons traverse the gap and an electron current flows. The emitted electron current has been measured as a function of the gap spacing and the anode potential. Current densities in excess of 70 A/cm 2 have been measured. The current is found to vary linearly with the anode voltage for gaps < 10 mm, and exceeds the Child-Langmuir current by at least two orders of magnitude. The experimental data will be compared with predictions from a model based on the emission of a cloud of electrons from the ferroelectric which in turn reflex in the diode gap

  7. Atomic resolution imaging of ferroelectric domains

    International Nuclear Information System (INIS)

    Bursill, L.A.

    1997-01-01

    Electron optical principles involved in obtaining atomic resolution images of ferroelectric domains are reviewed, including the methods available to obtain meaningful interpretation and analysis of the image detail in terms of the atomic structures. Recent work is concerned with establishing the relationship between the essentially static chemical nanodomains and the spatial and temporal fluctuations of the nanoscale polar domains present in the relaxor class of materials, including lead scandium tantalate (PST) and lead magnesium niobate (PMN). Correct interpretation of the images required use of Next Nearest Neighbour Ising model simulations for the chemical domain textures upon which we must superimpose the polar domain textures; an introduction to this work is presented. A thorough analysis of the atomic scale chemical inhomogeneities, based upon the HRTEM results, has lead to an improved formulation of the theory of the dielectric response of PMN and PST, which is capable to predict the observed temperature and frequency dependence. HRTEM may be combined with solid state and statistical physics principles to provide a deeper understanding of structure/property relationships. 15 refs., 6 figs

  8. Nonlinear modeling of ferroelectric-ferromagnetic composites based on condensed and finite element approaches (Presentation Video)

    Science.gov (United States)

    Ricoeur, Andreas; Lange, Stephan; Avakian, Artjom

    2015-04-01

    Magnetoelectric (ME) coupling is an inherent property of only a few crystals exhibiting very low coupling coefficients at low temperatures. On the other hand, these materials are desirable due to many promising applications, e.g. as efficient data storage devices or medical or geophysical sensors. Efficient coupling of magnetic and electric fields in materials can only be achieved in composite structures. Here, ferromagnetic (FM) and ferroelectric (FE) phases are combined e.g. including FM particles in a FE matrix or embedding fibers of the one phase into a matrix of the other. The ME coupling is then accomplished indirectly via strain fields exploiting magnetostrictive and piezoelectric effects. This requires a poling of the composite, where the structure is exposed to both large magnetic and electric fields. The efficiency of ME coupling will strongly depend on the poling process. Besides the alignment of local polarization and magnetization, it is going along with cracking, also being decisive for the coupling properties. Nonlinear ferroelectric and ferromagnetic constitutive equations have been developed and implemented within the framework of a multifield, two-scale FE approach. The models are microphysically motivated, accounting for domain and Bloch wall motions. A second, so called condensed approach is presented which doesn't require the implementation of a spatial discretisation scheme, however still considering grain interactions and residual stresses. A micromechanically motivated continuum damage model is established to simulate degradation processes. The goal of the simulation tools is to predict the different constitutive behaviors, ME coupling properties and lifetime of smart magnetoelectric devices.

  9. Low-loss microelectrodes fabricated using reverse-side exposure for a tunable ferroelectric capacitor application

    Science.gov (United States)

    Yoon, Yong-Kyu; Stevenson Kenney, J.; Hunt, Andrew T.; Allen, Mark G.

    2006-02-01

    Narrowly spaced thick microelectrodes are fabricated using a self-aligned multiple reverse-side exposure scheme for an improved quality-factor tunable ferroelectric capacitor. The microelectrodes are fabricated on a functional substrate—a thin film ferroelectric (barium strontium titanate, BST; BaxSr1-xTiO3) coated sapphire substrate, which has an electric-field-dependent dielectric property providing tuning functionality, as well as UV transparency permitting an additional degree of freedom in photolithography steps. The microelectrode process has been applied to interdigitated capacitor fabrication, where a critical challenge is maintaining narrow gaps between electrodes for high tunability, while simultaneously forming thick electrodes to minimize conductor loss. A single mask, self-aligned reverse-side exposure through the transparent substrate achieves both these goals. A single-finger test capacitor with an electrode gap of 1.2 µm and an electrode thickness of 2.2 µm is fabricated and characterized. Tunability (T = 100 × (C0 - Cbias)/C0) of 33% at 10 V has been achieved at 100 kHz. The 2.2 µm thick structure shows improvement of Q-factor compared to that of a 0.1 µm thick structure. To demonstrate the scalability of this process, a 102-finger interdigitated capacitor is fabricated and characterized at 100 kHz and 1 GHz. The structure is embedded in a 25 µm thick epoxy resin SU-8 for passivation. A quality factor decrease of 15-25%, tunability decrease of 2-3% and capacitance increase of 6% are observed due to the expoxy resin after passivation. High frequency performance of the capacitor has been measured to be 15.9 pF of capacitance, 28.1% tunability at 10 V and a quality factor of 16 (at a 10 V dc bias) at 1 GHz.

  10. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  11. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    Science.gov (United States)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  12. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Jay L. Hirshfield

    2011-03-01

    Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

  13. A study of radiation vulnerability of ferroelectric material and devices

    International Nuclear Information System (INIS)

    Coiec, Y.M.; Musseau, O.; Leray, J.L.

    1994-01-01

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' x-rays and 60 Co gamma rays

  14. A study of radiation vulnerability of ferroelectric material and devices

    Energy Technology Data Exchange (ETDEWEB)

    Coic, Y M; Musseau, O; Leray, J L [CEA Centre d` Etudes de Bruyeres-le-Chatel, 91 (France)

    1994-12-31

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ``10 keV Aracor`` s-rays and {sup 60}Co gamma rays. (author). 24 refs., 11 figs., 7 tabs.

  15. A study of radiation vulnerability of ferroelectric material and devices

    International Nuclear Information System (INIS)

    Coic, Y.M.; Musseau, O.; Leray, J.L.

    1994-01-01

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' s-rays and 60 Co gamma rays. (author). 24 refs., 11 figs., 7 tabs

  16. Graphene Dirac point tuned by ferroelectric polarization field

    Science.gov (United States)

    Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2018-04-01

    Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

  17. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.; Chshiev, M.; Manchon, Aurelien

    2015-01-01

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  18. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    International Nuclear Information System (INIS)

    Hirshfield, Jay L.

    2011-01-01

    Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

  19. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

    2015-03-30

    Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

  20. Structural, magnetic and electrical properties of ferromagnetic/ferroelectric multilayers

    International Nuclear Information System (INIS)

    Sirena, M.; Kaul, E.; Guimpel, J.; Steren, L. B.; Pedreros, M. B.; Rodriguez, C. A.

    2011-01-01

    The La 0.75 Sr 0.25 MnO 3 (LSMO)/Ba 0.7 Sr 0.3 TiO 3 (BSTO) superlattices and bilayers, where LSMO is ferromagnetic and BSTO is ferroelectric, were grown by dc sputtering. X-ray diffraction indicates that the samples present a textured growth with the c axis perpendicular to the substrate. Magnetization measurements show a decrease of the sample's magnetization for decreasing ferromagnetic thickness. This effect could be related to the presence of biaxial strain and a magnetic dead layer in the samples. Conductive atomic force microscopy indicates that the samples present a total covering of the ferromagnetic layer for a ferroelectric thickness higher than four unit cells. Transport tunneling of the carriers seems to be the preferred conduction mechanism through the ferroelectric layer. These are promising results for the development of multiferroic tunnel junctions.

  1. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.

    2015-02-11

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  2. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  3. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  4. Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

    CERN Document Server

    Topolov, Vitaly

    2012-01-01

    The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

  5. Antibacterial Au nanostructured surfaces

    Science.gov (United States)

    Wu, Songmei; Zuber, Flavia; Brugger, Juergen; Maniura-Weber, Katharina; Ren, Qun

    2016-01-01

    We present here a technological platform for engineering Au nanotopographies by templated electrodeposition on antibacterial surfaces. Three different types of nanostructures were fabricated: nanopillars, nanorings and nanonuggets. The nanopillars are the basic structures and are 50 nm in diameter and 100 nm in height. Particular arrangement of the nanopillars in various geometries formed nanorings and nanonuggets. Flat surfaces, rough substrate surfaces, and various nanostructured surfaces were compared for their abilities to attach and kill bacterial cells. Methicillin-resistant Staphylococcus aureus, a Gram-positive bacterial strain responsible for many infections in health care system, was used as the model bacterial strain. It was found that all the Au nanostructures, regardless their shapes, exhibited similar excellent antibacterial properties. A comparison of live cells attached to nanotopographic surfaces showed that the number of live S. aureus cells was flat and rough reference surfaces. Our micro/nanofabrication process is a scalable approach based on cost-efficient self-organization and provides potential for further developing functional surfaces to study the behavior of microbes on nanoscale topographies.We present here a technological platform for engineering Au nanotopographies by templated electrodeposition on antibacterial surfaces. Three different types of nanostructures were fabricated: nanopillars, nanorings and nanonuggets. The nanopillars are the basic structures and are 50 nm in diameter and 100 nm in height. Particular arrangement of the nanopillars in various geometries formed nanorings and nanonuggets. Flat surfaces, rough substrate surfaces, and various nanostructured surfaces were compared for their abilities to attach and kill bacterial cells. Methicillin-resistant Staphylococcus aureus, a Gram-positive bacterial strain responsible for many infections in health care system, was used as the model bacterial strain. It was found that all

  6. Optical properties of nitride nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

    2011-01-15

    In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. On the polarization dynamics in the presence of flexoelectricity and morphotropic phase boundary in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Pikin, S. A., E-mail: pikin@ns.crys.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    It is shown that anomalous piezoelectric properties of epitaxial nanostructures arise on the morphotropic phase boundary (MPB) due to the strong flexoelectric effect on dislocation walls. The MPB (typical of many materials) exhibits a coexistence of various phases and partition of these phases to minimum sizes. This minimum size l{sub c} (nanoscale) is found using the dislocation theory; it coincides with the distance between individual dislocations in dislocation walls, which is much larger than the Burgers vector b, regardless of the type of crystalline material. The flexoelectric coefficients f are estimated taking into account dimensional relations and experimental data on the rotations of ferroelectric nanodomains in multiferroics. These estimates coincide with classical values. The critical value l{sub c} ~ 10b specifies the measured dependence on the dielectric susceptibility χ{sub e}, f ~ χ{sub e}{sup 1/2}. The quantity χ{sub e} depends on the frequency of the ac electric field applied to a sample and on the dislocation density. The Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} ceramic composite shows typical frequency dispersion of χ{sub e} in a wide frequency range. The frequency dependence of flexoelecric coefficients is shown to reproduce the frequency dependence of permittivity at high frequencies.

  8. Embedded software verification and debugging

    CERN Document Server

    Winterholer, Markus

    2017-01-01

    This book provides comprehensive coverage of verification and debugging techniques for embedded software, which is frequently used in safety critical applications (e.g., automotive), where failures are unacceptable. Since the verification of complex systems needs to encompass the verification of both hardware and embedded software modules, this book focuses on verification and debugging approaches for embedded software with hardware dependencies. Coverage includes the entire flow of design, verification and debugging of embedded software and all key approaches to debugging, dynamic, static, and hybrid verification. This book discusses the current, industrial embedded software verification flow, as well as emerging trends with focus on formal and hybrid verification and debugging approaches. Includes in a single source the entire flow of design, verification and debugging of embedded software; Addresses the main techniques that are currently being used in the industry for assuring the quality of embedded softw...

  9. Characterization of ion beam induced nanostructures

    International Nuclear Information System (INIS)

    Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

    2006-01-01

    Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

  10. Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2015-09-30

    Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

  11. Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

    Science.gov (United States)

    Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

    2008-01-18

    Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

  12. Ferroelectric and ferroelastic domain structures in piezoelectric ceramics

    International Nuclear Information System (INIS)

    Bursill, L.A.; Julin Peng.

    1990-01-01

    A discussion of the results of conventional and high-resolution high-voltage electron microscopic studies of two ferroelectrics, barium sodium niobate and lead zirconium titanate is presented. It is shown that a rich variety of information such as ferroelectric and/or ferroelastic domains discommensurations versus antiphase boundaries, extended versus localized chemical defects and multiphase versus grain boundaries, become accessible in both single crystal and polycrystalline piezoelectrics, when a combination of high-resolution and conventional electron optical techniques is used. 15 refs., 8 figs

  13. Ferroelectric-antiferroelectric mixed systems. Equation of state, thermodynamic functions

    Directory of Open Access Journals (Sweden)

    N.A.Korynevskii

    2006-01-01

    Full Text Available The problem of equation of state for ferroelectric-antiferroelectric mixed systems in the whole region of a concentration change (0≤n≤1 is discussed. The main peculiarity of the presented model turns out to be the possibility for the site dipole momentum to be oriented ferroelectrically in z-direction and antiferroelectrically in x-direction. Such a situation takes place in mixed compounds of KDP type. The different phases (ferro-, antiferro-, paraelectric, dipole glass and some combinations of them have been found and analyzed.

  14. Acoustic emission mechanism at switching of ferroelectric crystals

    International Nuclear Information System (INIS)

    Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

  15. Acoustic emission mechanism at switching of ferroelectric crystals

    Energy Technology Data Exchange (ETDEWEB)

    Belov, V V; Morozova, G P; Serdobol' skaya, O Yu

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO.

  16. Voltage tunability of thermal conductivity in ferroelectric materials

    Science.gov (United States)

    Ihlefeld, Jon; Hopkins, Patrick Edward

    2016-02-09

    A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

  17. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    Science.gov (United States)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  18. Stress effects in ferroelectric perovskite thin-films

    Science.gov (United States)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  19. Ferroelectric tunnel junctions with multi-quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

    2014-06-02

    Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

  20. Unsteady Flame Embedding

    KAUST Repository

    El-Asrag, Hossam A.

    2011-01-01

    Direct simulation of all the length and time scales relevant to practical combustion processes is computationally prohibitive. When combustion processes are driven by reaction and transport phenomena occurring at the unresolved scales of a numerical simulation, one must introduce a dynamic subgrid model that accounts for the multiscale nature of the problem using information available on a resolvable grid. Here, we discuss a model that captures unsteady flow-flame interactions- including extinction, re-ignition, and history effects-via embedded simulations at the subgrid level. The model efficiently accounts for subgrid flame structure and incorporates detailed chemistry and transport, allowing more accurate prediction of the stretch effect and the heat release. In this chapter we first review the work done in the past thirty years to develop the flame embedding concept. Next we present a formulation for the same concept that is compatible with Large Eddy Simulation in the flamelet regimes. The unsteady flame embedding approach (UFE) treats the flame as an ensemble of locally one-dimensional flames, similar to the flamelet approach. However, a set of elemental one-dimensional flames is used to describe the turbulent flame structure directly at the subgrid level. The calculations employ a one-dimensional unsteady flame model that incorporates unsteady strain rate, curvature, and mixture boundary conditions imposed by the resolved scales. The model is used for closure of the subgrid terms in the context of large eddy simulation. Direct numerical simulation (DNS) data from a flame-vortex interaction problem is used for comparison. © Springer Science+Business Media B.V. 2011.

  1. Ductility of Nanostructured Bainite

    Directory of Open Access Journals (Sweden)

    Lucia Morales-Rivas

    2016-12-01

    Full Text Available Nanostructured bainite is a novel ultra-high-strength steel-concept under intensive current research, in which the optimization of its mechanical properties can only come from a clear understanding of the parameters that control its ductility. This work reviews first the nature of this composite-like material as a product of heat treatment conditions. Subsequently, the premises of ductility behavior are presented, taking as a reference related microstructures: conventional bainitic steels, and TRIP-aided steels. The ductility of nanostructured bainite is then discussed in terms of work-hardening and fracture mechanisms, leading to an analysis of the three-fold correlation between ductility, mechanically-induced martensitic transformation, and mechanical partitioning between the phases. Results suggest that a highly stable/hard retained austenite, with mechanical properties close to the matrix of bainitic ferrite, is advantageous in order to enhance ductility.

  2. Vortices and nanostructured superconductors

    CERN Document Server

    2017-01-01

    This book provides expert coverage of modern and novel aspects of the study of vortex matter, dynamics, and pinning in nanostructured and multi-component superconductors. Vortex matter in superconducting materials is a field of enormous beauty and intellectual challenge, which began with the theoretical prediction of vortices by A. Abrikosov (Nobel Laureate). Vortices, vortex dynamics, and pinning are key features in many of today’s human endeavors: from the huge superconducting accelerating magnets and detectors at the Large Hadron Collider at CERN, which opened new windows of knowledge on the universe, to the tiny superconducting transceivers using Rapid Single Flux Quanta, which have opened a revolutionary means of communication. In recent years, two new features have added to the intrinsic beauty and complexity of the subject: nanostructured/nanoengineered superconductors, and the discovery of a range of new materials showing multi-component (multi-gap) superconductivity. In this book, leading researche...

  3. Hybrid phonons in nanostructures

    CERN Document Server

    Ridley, Brian K

    2017-01-01

    Crystalline semiconductor nanostructures have special properties associated with electrons and lattice vibrations and their interaction, and this is the topic of the book. The result of spatial confinement of electrons is indicated in the nomenclature of nonostructures: quantum wells, quantum wires, and quantum dots. Confinement also has a profound effect on lattice vibrations and an account of this is the prime focus. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh’s work in the late nineteenth century, but no such documentation exists for optical modes. Indeed, it is only comparatively recently that any theory of the elastic properties of optical modes exists, and the account given in the book is comprehensive. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces ...

  4. Nanostructured sulfur cathodes

    KAUST Repository

    Yang, Yuan

    2013-01-01

    Rechargeable Li/S batteries have attracted significant attention lately due to their high specific energy and low cost. They are promising candidates for applications, including portable electronics, electric vehicles and grid-level energy storage. However, poor cycle life and low power capability are major technical obstacles. Various nanostructured sulfur cathodes have been developed to address these issues, as they provide greater resistance to pulverization, faster reaction kinetics and better trapping of soluble polysulfides. In this review, recent developments on nanostructured sulfur cathodes and mechanisms behind their operation are presented and discussed. Moreover, progress on novel characterization of sulfur cathodes is also summarized, as it has deepened the understanding of sulfur cathodes and will guide further rational design of sulfur electrodes. © 2013 The Royal Society of Chemistry.

  5. Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

    Science.gov (United States)

    Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

    2013-06-25

    Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

  6. Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

    Science.gov (United States)

    Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

    2018-05-01

    We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

  7. Embedded microcontroller interfacing

    CERN Document Server

    Gupta, Gourab Sen

    2010-01-01

    Mixed-Signal Embedded Microcontrollers are commonly used in integrating analog components needed to control non-digital electronic systems. They are used in automatically controlled devices and products, such as automobile engine control systems, wireless remote controllers, office machines, home appliances, power tools, and toys. Microcontrollers make it economical to digitally control even more devices and processes by reducing the size and cost, compared to a design that uses a separate microprocessor, memory, and input/output devices. In many undergraduate and post-graduate courses, teachi

  8. Ferroelectric BaTiO3 and LiNbO3 Nanoparticles Dispersed in Ferroelectric Liquid Crystal Mixtures: Electrooptic and Dielectric (Postprint)

    Science.gov (United States)

    2016-10-14

    strength for non- doped LF4 and LiNbO3/LF4 nanocolloids at temperature 30C. 146 R. K . SHUKLA ET AL. 6 Distribution A. Approved for public release (PA...AFRL-RX-WP-JA-2017-0210 FERROELECTRIC BaTiO3 AND LiNbO3 NANOPARTICLES DISPERSED IN FERROELECTRIC LIQUID CRYSTAL MIXTURES: ELECTROOPTIC...COMMAND UNITED STATES AIR FORCE Ferroelectric BaTiO3 and LiNbO3 nanoparticles dispersed in ferroelectric liquid crystal mixtures: Electrooptic and

  9. Antibacterial Au nanostructured surfaces.

    Science.gov (United States)

    Wu, Songmei; Zuber, Flavia; Brugger, Juergen; Maniura-Weber, Katharina; Ren, Qun

    2016-02-07

    We present here a technological platform for engineering Au nanotopographies by templated electrodeposition on antibacterial surfaces. Three different types of nanostructures were fabricated: nanopillars, nanorings and nanonuggets. The nanopillars are the basic structures and are 50 nm in diameter and 100 nm in height. Particular arrangement of the nanopillars in various geometries formed nanorings and nanonuggets. Flat surfaces, rough substrate surfaces, and various nanostructured surfaces were compared for their abilities to attach and kill bacterial cells. Methicillin-resistant Staphylococcus aureus, a Gram-positive bacterial strain responsible for many infections in health care system, was used as the model bacterial strain. It was found that all the Au nanostructures, regardless their shapes, exhibited similar excellent antibacterial properties. A comparison of live cells attached to nanotopographic surfaces showed that the number of live S. aureus cells was flat and rough reference surfaces. Our micro/nanofabrication process is a scalable approach based on cost-efficient self-organization and provides potential for further developing functional surfaces to study the behavior of microbes on nanoscale topographies.

  10. NiCo2S4 nanorod embedded rGO sheets as electrodes for supercapacitor

    Science.gov (United States)

    Sarkar, Aatreyee; Bera, Supriya; Chakraborty, Amit Kumar

    2018-04-01

    We report the synthesis of a hybrid nanostructure based on NiCo2S4 and reduced graphene oxide (rGO) following a facile hydrothermal method. X-ray diffraction (XRD), and electron microscopy (FESEM and HRTEM) analyses showed rod-like NiCo2S4 nanostructures embedded in rGO sheets. The electrochemical analysis of the synthesized nanohybrid using cyclic voltammetry (CV) and galvanostatic charge discharge (GCD) revealed specific capacitance of 410 F/gm indicating its suitability as a good electrode material for supercapacitor.

  11. Embedded Multimaterial Extrusion Bioprinting.

    Science.gov (United States)

    Rocca, Marco; Fragasso, Alessio; Liu, Wanjun; Heinrich, Marcel A; Zhang, Yu Shrike

    2018-04-01

    Embedded extrusion bioprinting allows for the generation of complex structures that otherwise cannot be achieved with conventional layer-by-layer deposition from the bottom, by overcoming the limits imposed by gravitational force. By taking advantage of a hydrogel bath, serving as a sacrificial printing environment, it is feasible to extrude a bioink in freeform until the entire structure is deposited and crosslinked. The bioprinted structure can be subsequently released from the supporting hydrogel and used for further applications. Combining this advanced three-dimensional (3D) bioprinting technique with a multimaterial extrusion printhead setup enables the fabrication of complex volumetric structures built from multiple bioinks. The work described in this paper focuses on the optimization of the experimental setup and proposes a workflow to automate the bioprinting process, resulting in a fast and efficient conversion of a virtual 3D model into a physical, extruded structure in freeform using the multimaterial embedded bioprinting system. It is anticipated that further development of this technology will likely lead to widespread applications in areas such as tissue engineering, pharmaceutical testing, and organs-on-chips.

  12. Learning optimal embedded cascades.

    Science.gov (United States)

    Saberian, Mohammad Javad; Vasconcelos, Nuno

    2012-10-01

    The problem of automatic and optimal design of embedded object detector cascades is considered. Two main challenges are identified: optimization of the cascade configuration and optimization of individual cascade stages, so as to achieve the best tradeoff between classification accuracy and speed, under a detection rate constraint. Two novel boosting algorithms are proposed to address these problems. The first, RCBoost, formulates boosting as a constrained optimization problem which is solved with a barrier penalty method. The constraint is the target detection rate, which is met at all iterations of the boosting process. This enables the design of embedded cascades of known configuration without extensive cross validation or heuristics. The second, ECBoost, searches over cascade configurations to achieve the optimal tradeoff between classification risk and speed. The two algorithms are combined into an overall boosting procedure, RCECBoost, which optimizes both the cascade configuration and its stages under a detection rate constraint, in a fully automated manner. Extensive experiments in face, car, pedestrian, and panda detection show that the resulting detectors achieve an accuracy versus speed tradeoff superior to those of previous methods.

  13. PREFACE: Nanostructured surfaces

    Science.gov (United States)

    Palmer, Richard E.

    2003-10-01

    We can define nanostructured surfaces as well-defined surfaces which contain lateral features of size 1-100 nm. This length range lies well below the micron regime but equally above the Ångstrom regime, which corresponds to the interatomic distances on single-crystal surfaces. This special issue of Journal of Physics: Condensed Matter presents a collection of twelve papers which together address the fabrication, characterization, properties and applications of such nanostructured surfaces. Taken together they represent, in effect, a status report on the rapid progress taking place in this burgeoning area. The first four papers in this special issue have been contributed by members of the European Research Training Network ‘NanoCluster’, which is concerned with the deposition, growth and characterization of nanometre-scale clusters on solid surfaces—prototypical examples of nanoscale surface features. The paper by Vandamme is concerned with the fundamentals of the cluster-surface interaction; the papers by Gonzalo and Moisala address, respectively, the optical and catalytic properties of deposited clusters; and the paper by van Tendeloo reports the application of transmission electron microscopy (TEM) to elucidate the surface structure of spherical particles in a catalyst support. The fifth paper, by Mendes, is also the fruit of a European Research Training Network (‘Micro-Nano’) and is jointly contributed by three research groups; it reviews the creation of nanostructured surface architectures from chemically-synthesized nanoparticles. The next five papers in this special issue are all concerned with the characterization of nanostructured surfaces with scanning tunnelling microscopy (STM) and atomic force microscopy (AFM). The papers by Bolotov, Hamilton and Dunstan demonstrate that the STM can be employed for local electrical measurements as well as imaging, as illustrated by the examples of deposited clusters, model semiconductor structures and real

  14. Piezo-optical and electro-optical behaviour of nematic liquid crystals dispersed in a ferroelectric copolymer matrix

    International Nuclear Information System (INIS)

    Ganesan, Lakshmi Meena; Wirges, Werner; Gerhard, Reimund; Mellinger, Axel

    2010-01-01

    Polymer-dispersed liquid crystals (PDLCs) are composite materials that consist of micrometre-sized liquid-crystal (LC) droplets embedded in a polymer matrix. From ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and a nematic LC, PDLC films containing 10 and 60 wt% LC were prepared, and their electro-optical and piezo-optical behaviour was investigated. The electric field that is generated by the application of mechanical stress leads to changes in the transmittance of the PDLC film through a combination of piezoelectric and electro-optical effects. Such a piezo-optical PDLC material may be useful, e.g., in sensing and visualization applications.

  15. Diffusion slowdown in the nanostructured liquid Ga-Sn alloy

    International Nuclear Information System (INIS)

    Podorozhkin, Dmitri Y.; Charnaya, Elena V.; Lee, Min Kai; Chang, Lieh-Jeng; Haase, Juergen; Michel, Dieter; Kumzerov, Yurii A.; Fokin, Alexsandr V.

    2015-01-01

    The diffusion of gallium in liquid Ga-Sn alloy embedded into different porous silica matrices was studied by NMR. Spin relaxation was measured for two gallium isotopes, 71 Ga and 69 Ga, at two magnetic fields. Pronounced rise of quadrupole contribution to relaxation was observed for the nanostructured alloy which increased with decreasing the pore size. The correlation time of atomic mobility was evaluated and found to be much larger than in the relevant bulk melt which evidenced a pronounced diffusion slowdown in the Ga-Sn alloy under nanoconfinement. It is shown that the diffusion was slower by a factor of 30 for the alloy within 7 nm pores. The spectral densities of electric field gradients at zero frequency were found to double for the finest pores. The Knight shift was found to decrease but slightly for the nanostructured alloy. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. CuInP₂S₆ Room Temperature Layered Ferroelectric.

    Science.gov (United States)

    Belianinov, A; He, Q; Dziaugys, A; Maksymovych, P; Eliseev, E; Borisevich, A; Morozovska, A; Banys, J; Vysochanskii, Y; Kalinin, S V

    2015-06-10

    We explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V-likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. The existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing "graphene family".

  17. Molecular dynamics simulations of ferroelectric domain formation by oxygen vacancy

    Science.gov (United States)

    Zhu, Lin; You, Jeong Ho; Chen, Jinghong; Yeo, Changdong

    2018-05-01

    An oxygen vacancy, known to be detrimental to ferroelectric properties, has been investigated numerically for the potential uses to control ferroelectric domains in films using molecular dynamics simulations based on the first-principles effective Hamiltonian. As an electron donor, an oxygen vacancy generates inhomogeneous electrostatic and displacement fields which impose preferred polarization directions near the oxygen vacancy. When the oxygen vacancies are placed at the top and bottom interfaces, the out-of-plane polarizations are locally developed near the interfaces in the directions away from the interfaces. These polarizations from the interfaces are in opposite directions so that the overall out-of-plane polarization becomes significantly reduced. In the middle of the films, the in-plane domains are formed with containing 90° a 1/a 2 domain walls and the films are polarized along the [1 1 0] direction even when no electric field is applied. With oxygen vacancies placed at the top interface only, the films exhibit asymmetric hysteresis loops, confirming that the oxygen vacancies are one of the possible sources of ferroelectric imprint. It has been qualitatively demonstrated that the domain structures in the imprint films can be turned on and off by controlling an external field along the thickness direction. This study shows qualitatively that the oxygen vacancies can be utilized for tuning ferroelectric domain structures in films.

  18. Observation of domain patterns on a ferroelectric ceramic

    International Nuclear Information System (INIS)

    Ibrahim, R.C.; Zavaglia, C.A.C.

    1992-01-01

    In this work ferroelectric domain patterns are observed on a PZT-like ceramic material produced in Brazil. This material has tetragonal unit cell composing a perovskite type structure. The samples, after grinding and polishing, were chemically etched and observed on optical microscope and scanning electron microscope. (author)

  19. Mechanism of negative ion emission from surfaces of ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Šroubek, Zdeněk

    2012-01-01

    Roč. 606, 15-16 (2012), s. 1327-1330 ISSN 0039-6028 Institutional support: RVO:67985882 Keywords : Surface of ferroelectrics * Ion emission Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.838, year: 2012 http://www.sciencedirect.com/science/article/pii/S0039602812001525#gts0005

  20. Reversible spin texture in ferroelectric Hf O2

    Science.gov (United States)

    Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

    2017-06-01

    Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

  1. Effect of domains configuration on crystal structure in ferroelectric ...

    Indian Academy of Sciences (India)

    2017-09-09

    Sep 9, 2017 ... It is well known that domains and crystal structure control the physical properties of ferroelectrics. ... The as-prepared ceramics were crushed to fine pow- ders. ..... [1] Gao J, Xue D, Wang Y, Wang D, Zhang L, Wu H et al 2011.

  2. Phase transition properties of a cylindrical ferroelectric nanowire

    Indian Academy of Sciences (India)

    Based on the transverse Ising model (TIM) and using the mean-field theory, we inves- ... workers [11–13] to study the static and dynamic properties of ferroelectric superlattices. ... The mean-field expressions is usually used for a qualitative.

  3. Guest–host interaction in ferroelectric liquid crystal–nanoparticle ...

    Indian Academy of Sciences (India)

    Administrator

    nanoparticles have been added to the pure ferroelectric liquid crystal (FLC) Felix 17/100. The nanoparticles .... To prepare the NPs, doped-FLC sample, an appropriate amount (in the .... permittivity and f the frequency while n, m and k are the.

  4. Effects of Nb doping on the microstructure, ferroelectric and ...

    Indian Academy of Sciences (India)

    ·cm) and the poor piezoelectric performance and weak ferroelectricity are observed after the addition of .... 9.81–13.88% (<15%) and the goodness-of-fit indicator S ..... the Open Project of State Key Laboratory of Electronic Thin. Films and ...

  5. Strain-induced structural, magnetic and ferroelectric properties of ...

    Indian Academy of Sciences (India)

    2017-07-25

    Jul 25, 2017 ... deposited on the composite film surface by DC sputtering techniques. The magnetic measurements of these composite films were performed using a vibratory sample magnetometer. (VSM). Ferroelectric properties of films were measured using a Precision multiferroic analyser. All measurements were per-.

  6. Stabilization of ferroelectric properties in Hafnia and Zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Kersch, Alfred [Univ. of Applied Sciences Munich (Germany). Modeling and Simulation Lab

    2016-11-01

    Experiments by our collaborators show that not only earth alkaline metals but also lanthanides and boron group metals are capable of inducing ferroelectric behavior in Hafnia. These dopants are known to form more complex defect structures due to their 3-valent nature. This requires further simulation. In some cases computationally more expensive density functionals will be required.

  7. Dielectric properties of KDP-type ferroelectric crystals in the ...

    Indian Academy of Sciences (India)

    Hamiltonian for KDP-type ferroelectrics, expressions for field-dependent shift, width, ... For the calculation, method of statistical double-time temperature- ... roelectric phase transition and dielectric behaviour of KDP and its isomorphs is .... The dissipation of power in dielectric material can conveniently be expressed as.

  8. Optical properties of self-polarized PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

    2002-01-01

    Roč. 273, - (2002), s. 155-160 ISSN 0015-0193 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * band gap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.408, year: 2002

  9. Nondestructive investigatons of the depth profile of PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Glinchuk, M. D.; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

    2001-01-01

    Roč. 264, - (2001), s. 151-156 ISSN 0015-0193 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * depth profile * interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.471, year: 2001

  10. Bidimensional distortion in ferroelectric liquid crystals with strong ...

    Indian Academy of Sciences (India)

    characterized by bistability and optical memory in the surface-stabilized bookshelf [2,3] ... tic layers, which lies in a plane parallel to the cell walls (see figure 1). Up to now ... Theory. We consider a liquid crystalline material exhibiting ferroelectric phase organized in book- ... By applying an external electric field Eext along.

  11. Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

    Czech Academy of Sciences Publication Activity Database

    Tyunina, Marina; Yao, L.; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Trepakov, Vladimír; van Dijken, S.

    2015-01-01

    Roč. 16, č. 2 (2015), 026002 ISSN 1468-6996 R&D Projects: GA ČR GAP108/12/1941 Institutional support: RVO:68378271 Keywords : epitaxial growth * ferroelectric nanofilms Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.433, year: 2015

  12. Flexible NAND-Like Organic Ferroelectric Memory Array

    NARCIS (Netherlands)

    Kam, B.; Ke, T.H.; Chasin, A.; Tyagi, M.; Cristoferi, C.; Tempelaars, K.; Breemen, A.J.J.M. van; Myny, K.; Schols, S.; Genoe, J.; Gelinck, G.H.; Heremans, P.

    2014-01-01

    We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing

  13. Relaxor ferroelectrics: back to the single-soft-mode picture

    Czech Academy of Sciences Publication Activity Database

    Hehlen, B.; Al-Sabbagh, M.; Al-Zein, A.; Hlinka, Jiří

    2016-01-01

    Roč. 117, č. 15 (2016), 1-6, č. článku 155501. ISSN 0031-9007 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : relaxor * ferroelectrics * light-scattering * hyper-Raman * dielectric permittivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 8.462, year: 2016

  14. Nanocharacterization of the negative stiffness of ferroelectric materials

    Czech Academy of Sciences Publication Activity Database

    Skandani, A.A.; Čtvrtlík, Radim; Al-Haik, M.

    2014-01-01

    Roč. 105, č. 8 (2014), "082906-1"-"082906-5" ISSN 0003-6951 R&D Projects: GA TA ČR TA03010743 Institutional support: RVO:68378271 Keywords : ferroelectric materials * negative stiffness * thermomechanical environments Subject RIV: JJ - Other Materials Impact factor: 3.302, year: 2014

  15. On the Structural and Electrical Properties of Metal-Ferroelectric ...

    Indian Academy of Sciences (India)

    6

    Click here to view linked References. 1 ... memory applications due to their unique electrical properties [1-2]. ... considerable attention for their application as the gate material for MFeIS ... and precisely controlled for a particular ferroelectric layer. ..... leading to decrease in the net polarization and memory retention capacity.

  16. Operation of Ferroelectric Plasma Sources in a Gas Discharge Mode

    International Nuclear Information System (INIS)

    Dunaevsky, A.; Fisch, N.J.

    2004-01-01

    Ferroelectric plasma sources in vacuum are known as sources of ablative plasma, formed due to surface discharge. In this paper, observations of a gas discharge mode of operation of the ferroelectric plasma sources (FPS) are reported. The gas discharge appears at pressures between approximately 20 and approximately 80 Torr. At pressures of 1-20 Torr, there is a transition from vacuum surface discharge to the gas discharge, when both modes coexist and the surface discharges sustain the gas discharge. At pressures between 20 and 80 Torr, the surface discharges are suppressed, and FPS operate in pure gas discharge mode, with the formation of almost uniform plasma along the entire surface of the ceramics between strips. The density of the expanding plasma is estimated to be about 1013 cm-3 at a distance of 5.5 mm from the surface. The power consumption of the discharge is comparatively low, making it useful for various applications. This paper also presents direct measurements of the yield of secondary electron emission from ferroelectric ceramics, which, at low energies of primary electrons, is high and dependent on the polarization of the ferroelectric material

  17. Characterization of current transport in ferroelectric polymer devices

    KAUST Repository

    Hanna, Amir; Bhansali, Unnat Sampatraj; Khan, Yasser; Alshareef, Husam N.

    2014-01-01

    We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt

  18. Spatially Embedded Inequality

    DEFF Research Database (Denmark)

    Holck, Lotte

    2016-01-01

    /methodology/approach: – The (re)production of inequality is explored by linking research on organizational space with HRM diversity management. Data from an ethnographic study undertaken in a Danish municipal center illustrates how a substructure of inequality is spatially upheld alongside a formal diversity policy. Archer...... and ethnification of job categories. However, the same spatial structures allows for a variety of opposition and conciliation strategies among minority employees, even though the latter tend to prevail in a reproduction rather than a transformation of the organizational opportunity structures. Research limitations...... the more subtle, spatially embedded forms of inequality. Originality/value: – Theoretical and empirical connections between research on organizational space and HRM diversity management have thus far not been systematically studied. This combination might advance knowledge on the persistence of micro...

  19. Embedded sensor systems

    CERN Document Server

    Agrawal, Dharma Prakash

    2017-01-01

    This inspiring textbook provides an introduction to wireless technologies for sensors, explores potential use of sensors for numerous applications, and utilizes probability theory and mathematical methods as a means of embedding sensors in system design. It discusses the need for synchronization and underlying limitations, inter-relation between given coverage and connectivity to number of sensors needed, and the use of geometrical distance to determine location of the base station for data collection and explore use of anchor nodes for relative position determination of sensors. The book explores energy conservation, communication using TCP, the need for clustering and data aggregation, and residual energy determination and energy harvesting. It covers key topics of sensor communication like mobile base stations and relay nodes, delay-tolerant sensor networks, and remote sensing and possible applications. The book defines routing methods and do performance evaluation for random and regular sensor topology an...

  20. Communicating embedded systems networks applications

    CERN Document Server

    Krief, Francine

    2013-01-01

    Embedded systems become more and more complex and require having some knowledge in various disciplines such as electronics, data processing, telecommunications and networks. Without detailing all the aspects related to the design of embedded systems, this book, which was written by specialists in electronics, data processing and telecommunications and networks, gives an interesting point of view of communication techniques and problems in embedded systems. This choice is easily justified by the fact that embedded systems are today massively communicating and that telecommunications and network

  1. Advances in embedded computer vision

    CERN Document Server

    Kisacanin, Branislav

    2014-01-01

    This illuminating collection offers a fresh look at the very latest advances in the field of embedded computer vision. Emerging areas covered by this comprehensive text/reference include the embedded realization of 3D vision technologies for a variety of applications, such as stereo cameras on mobile devices. Recent trends towards the development of small unmanned aerial vehicles (UAVs) with embedded image and video processing algorithms are also examined. The authoritative insights range from historical perspectives to future developments, reviewing embedded implementation, tools, technolog

  2. Embedded Systems Design with FPGAs

    CERN Document Server

    Pnevmatikatos, Dionisios; Sklavos, Nicolas

    2013-01-01

    This book presents methodologies for modern applications of embedded systems design, using field programmable gate array (FPGA) devices.  Coverage includes state-of-the-art research from academia and industry on a wide range of topics, including advanced electronic design automation (EDA), novel system architectures, embedded processors, arithmetic, dynamic reconfiguration and applications. Describes a variety of methodologies for modern embedded systems design;  Implements methodologies presented on FPGAs; Covers a wide variety of applications for reconfigurable embedded systems, including Bioinformatics, Communications and networking, Application acceleration, Medical solutions, Experiments for high energy physics, Astronomy, Aerospace, Biologically inspired systems and Computational fluid dynamics (CFD).

  3. Embedding Complementarity in HCI Methods

    DEFF Research Database (Denmark)

    Nielsen, Janni; Yssing, Carsten; Tweddell Levinsen, Karin

    2007-01-01

    Differences in cultural contexts constitute differences in cognition, and research has shown that different cultures may use different cognitive tools for perception and reasoning. The cultural embeddings are significant in relation to HCI, because the cultural context is also embedded in the tec......Differences in cultural contexts constitute differences in cognition, and research has shown that different cultures may use different cognitive tools for perception and reasoning. The cultural embeddings are significant in relation to HCI, because the cultural context is also embedded...

  4. Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

    2014-01-01

    Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

  5. Optical switching systems using nanostructures

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2004-01-01

    High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

  6. Anti-Ferroelectric Ceramics for High Energy Density Capacitors

    Directory of Open Access Journals (Sweden)

    Aditya Chauhan

    2015-11-01

    Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

  7. Organometal Halide Perovskite Solar Absorbers and Ferroelectric Nanocomposites for Harvesting Solar Energy

    Science.gov (United States)

    Hettiarachchi, Chaminda Lakmal

    Organometal halide perovskite absorbers such as methylammonium lead iodide chloride (CH3NH3PbI3-xClx), have emerged as an exciting new material family for photovoltaics due to its appealing features that include suitable direct bandgap with intense light absorbance, band gap tunability, ultra-fast charge carrier generation, slow electron-hole recombination rates, long electron and hole diffusion lengths, microsecond-long balanced carrier mobilities, and ambipolarity. The standard method of preparing CH3NH3PbI3-xClx perovskite precursors is a tedious process involving multiple synthesis steps and, the chemicals being used (hydroiodic acid and methylamine) are quite expensive. This work describes a novel, single-step, simple, and cost-effective solution approach to prepare CH3NH3PbI3-xClx thin films by the direct reaction of the commercially available CH3NH 3Cl (or MACl) and PbI2. A detailed analysis of the structural and optical properties of CH3NH3PbI3-xCl x thin films deposited by aerosol assisted chemical vapor deposition is presented. Optimum growth conditions have been identified. It is shown that the deposited thin films are highly crystalline with intense optical absorbance. Charge carrier separation of these thin films can be enhanced by establishing a local internal electric field that can reduce electron-hole recombination resulting in increased photo current. The intrinsic ferroelectricity in nanoparticles of Barium Titanate (BaTiO3 -BTO) embedded in the solar absorber can generate such an internal field. A hybrid structure of CH3NH 3PbI3-xClx perovskite and ferroelectric BTO nanocomposite FTO/TiO2/CH3NH3PbI3-xClx : BTO/P3HT/Cu as a new type of photovoltaic device is investigated. Aerosol assisted chemical vapor deposition process that is scalable to large-scale manufacturing was used for the growth of the multilayer structure. TiO 2 and P3HT with additives were used as ETL and HTL respectively. The growth process of the solar absorber layer includes the

  8. Embedding potentials for excited states of embedded species

    International Nuclear Information System (INIS)

    Wesolowski, Tomasz A.

    2014-01-01

    Frozen-Density-Embedding Theory (FDET) is a formalism to obtain the upper bound of the ground-state energy of the total system and the corresponding embedded wavefunction by means of Euler-Lagrange equations [T. A. Wesolowski, Phys. Rev. A 77(1), 012504 (2008)]. FDET provides the expression for the embedding potential as a functional of the electron density of the embedded species, electron density of the environment, and the field generated by other charges in the environment. Under certain conditions, FDET leads to the exact ground-state energy and density of the whole system. Following Perdew-Levy theorem on stationary states of the ground-state energy functional, the other-than-ground-state stationary states of the FDET energy functional correspond to excited states. In the present work, we analyze such use of other-than-ground-state embedded wavefunctions obtained in practical calculations, i.e., when the FDET embedding potential is approximated. Three computational approaches based on FDET, that assure self-consistent excitation energy and embedded wavefunction dealing with the issue of orthogonality of embedded wavefunctions for different states in a different manner, are proposed and discussed

  9. Nonlinear dielectric response in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    Lente, M. H.

    2004-08-01

    Full Text Available Electrical permittivity dependence on electric external bias field was investigated in PZT thin films. The results revealed the existence of two mechanisms contributing to the electrical permittivity. The first one was related to the domain reorientation, which was responsible for a strong no linear dielectric behavior, acting only during the poling process. The second mechanism was associated with the domain wall vibrations, which presented a reasonable linear electrical behavior with the applied bias field, contributing always to the permittivity independently of the poling state of the sample. The results also indicated that the gradual reduction of the permittivity with the increase of the bias field strength may be related to the gradual bending of the domain walls. It is believed that the domain wall bending induces a hardening and/or a thinning of the walls, thus reducing the electrical permittivity. A reinterpretation of the model proposed in the literature to explain the dielectric characteristics of ferroelectric materials at high electric field regime is proposed.

    Se ha estudiado la dependencia de la permitividad eléctrica con un campo bias externo en láminas delgadas de PZT. Los resultados revelaron la existencia de dos mecanismos que contribuyen a la permitividad eléctrica. El primero está relacionado con la reorientación de dominios, actúa sólo durante el proceso de polarización y es responsable de un comportamiento dieléctrico fuertemente no lineal. El segundo mecanismo se asocia a las vibraciones de las paredes de dominio, presentando un comportamiento eléctrico razonablemente lineal con el campo bias aplicado, contribuyendo siempre a la permitividad independientemente del estado de polarización de la muestra. Los resultados indicaron también que la reducción gradual de la permitividad con el aumento de la fuerza del campo bias podría estar relacionada con el “bending” gradual de las paredes de dominio

  10. Semiconductors and semimetals nanostructured systems

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Reed, Mark A

    1992-01-01

    This is the first available volume to consolidate prominent topics in the emerging field of nanostructured systems. Recent technological advancements have led to a new era of nanostructure physics, allowing for the fabrication of nanostructures whose behavior is dominated by quantum interference effects. This new capability has enthused the experimentalist and theorist alike. Innumerable possibilities have now opened up for physical exploration and device technology on the nanoscale. This book, with contributions from five pioneering researchers, will allow the expert and novice alike to explore a fascinating new field.Provides a state-of-the-art review of quantum-scale artificially nanostructured electronic systemsIncludes contributions by world-known experts in the fieldOpens the field to the non-expert with a concise introductionFeatures discussions of:Low-dimensional condensed matter physicsProperties of nanostructured, ultrasmall electronic systemsMesoscopic physics and quantum transportPhysics of 2D ele...

  11. Peroxidases in nanostructures

    Directory of Open Access Journals (Sweden)

    Ana Maria eCarmona-Ribeiro

    2015-09-01

    Full Text Available Peroxidases are enzymes catalyzing redox reactions that cleave peroxides. Their active redox centers have heme, cysteine thiols, selenium, manganese and other chemical moieties. Peroxidases and their mimetic systems have several technological and biomedical applications such as environment protection, energy production, bioremediation, sensors and immunoassays design and drug delivery devices. The combination of peroxidases or systems with peroxidase-like activity with nanostructures such as nanoparticles, nanotubes, thin films, liposomes, micelles, nanoflowers, nanorods and others is often an efficient strategy to improve catalytic activity, targeting and reusability.

  12. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  13. Recent Developments of Nanostructured Electrodes for Bioelectrocatalysis of Dioxygen Reduction

    Directory of Open Access Journals (Sweden)

    Marcin Opallo

    2011-01-01

    Full Text Available The recent development of nanostructured electrodes for bioelectrocatalytic dioxygen reduction catalysed by two copper oxidoreductases, laccase and bilirubin oxidase, is reviewed. Carbon-based nanomaterials as carbon nanotubes or carbon nanoparticles are frequently used for electrode modification, whereas there are only few examples of biocathodes modified with metal or metal oxide nanoparticles. These nanomaterials are adsorbed on the electrode surface or embedded in multicomponent film. The nano-objects deposited act as electron shuttles between the enzyme and the electrode substrate providing favourable conditions for mediatorless bioelectrocatalysis.

  14. Modeling of Embedded Human Systems

    Science.gov (United States)

    2013-07-01

    ISAT study [7] for DARPA in 20051 concretized the notion of an embedded human, who is a necessary component of the system. The proposed work integrates...Technology, IEEE Transactions on, vol. 16, no. 2, pp. 229–244, March 2008. [7] C. J. Tomlin and S. S. Sastry, “Embedded humans,” tech. rep., DARPA ISAT

  15. Irradiation-Induced Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Birtcher, R.C.; Ewing, R.C.; Matzke, Hj.; Meldrum, A.; Newcomer, P.P.; Wang, L.M.; Wang, S.X.; Weber, W.J.

    1999-08-09

    This paper summarizes the results of the studies of the irradiation-induced formation of nanostructures, where the injected interstitials from the source of irradiation are not major components of the nanophase. This phenomena has been observed by in situ transmission electron microscopy (TEM) in a number of intermetallic compounds and ceramics during high-energy electron or ion irradiations when the ions completely penetrate through the specimen. Beginning with single crystals, electron or ion irradiation in a certain temperature range may result in nanostructures composed of amorphous domains and nanocrystals with either the original composition and crystal structure or new nanophases formed by decomposition of the target material. The phenomenon has also been observed in natural materials which have suffered irradiation from the decay of constituent radioactive elements and in nuclear reactor fuels which have been irradiated by fission neutrons and other fission products. The mechanisms involved in the process of this nanophase formation are discussed in terms of the evolution of displacement cascades, radiation-induced defect accumulation, radiation-induced segregation and phase decomposition, as well as the competition between irradiation-induced amorphization and recrystallization.

  16. Nanostructures by ion beams

    Science.gov (United States)

    Schmidt, B.

    Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

  17. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, K.C., E-mail: wilsonphy@gmail.com [Department of Physics, Govt. Polytechnic College Kothamangalam, Chelad P O, Ernakulam, Kerala 686681 (India); Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India); Basheer Ahamed, M. [Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India)

    2016-01-15

    Graphical abstract: - Highlights: • Novel honey comb like cadmium sulfide thin film nanostructures prepared using chemical bath deposition on glass substrates. • Honey comb nanostructure found in two layers: an ultra thin film at bottom and well inter connected with walls of < 25 nm thick on top; hence maximum surface area possible for CdS nanostructure. • Shell size of the nanostructures and energy band gaps were controlled also an enhanced persistent conductivity observed on Sn doping. - Abstract: Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like “plum pudding”. Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  18. Theoretical model for thin ferroelectric films and the multilayer structures based on them

    International Nuclear Information System (INIS)

    Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

    2013-01-01

    A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data

  19. Theoretical model for thin ferroelectric films and the multilayer structures based on them

    Science.gov (United States)

    Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

    2013-06-01

    A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

  20. Theoretical model for thin ferroelectric films and the multilayer structures based on them

    Energy Technology Data Exchange (ETDEWEB)

    Starkov, A. S., E-mail: starkov@iue.tuwien.ac.at; Pakhomov, O. V. [St. Petersburg National Research Univeristy ITMO, Institute of Refrigeration and Biotechnologies (Russian Federation); Starkov, I. A. [Vienna University of Technology, Institute for Microelectronics (Austria)

    2013-06-15

    A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

  1. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  2. A qualitative test for intrinsic size effect on ferroelectric phase transitions

    OpenAIRE

    Wang, Jin; Tagantsev, Alexander K.; Setter, Nava

    2010-01-01

    The size effect in ferroelectrics is treated as a competition between the geometrical symmetry of the ferroelectric sample and its crystalline symmetry. The manifestation of this competition is shown to be polarization rotation, which is driven by temperature and/or size variations, thus providing a qualitative indication of intrinsic finite size effect on ferroelectrics. The concept is demonstrated in a simple case of PbTiO3 nanowires having their axis parallel to [111]C direction, where the...

  3. Nanocomposites with embedded structures for lithium-ion batteries

    Science.gov (United States)

    Yang, Zichao

    Lithium-ion batteries (LIBs) have been widely employed in portable electronics and are rapidly expanding into emerging markets such as hybrid and electric vehicles and potentially electric grid storage. These new opportunities create new challenges for LIBs and further improvement of specific energy, cycling performance and rate capability are required. A major strategy in performance enhancement for the electrode materials involves the creation of carbon composites to provide mechanical buffering of active material and to improve electrical conductivity. In the current work, a platform is developed for creating functional hybrid materials by copolymerization of organic molecules and inorganic compounds followed by thermal pyrolysis, and the approach yields nanostructured composites in which nanoparticles are uniformly embedded in a porous, partially graphitic carbon matrix. Depending upon the chemistry of the starting materials, nanocomposites with embedded structures created using the approach are attractive as anode or cathode materials for next-generation rechargeable lithium battery systems. The platform is very versatile and through ex situ conversion or utilization of multiple precursors, can be applied to various classes of materials including metal oxides (single or mixed), metals, metal sulfides, alloys, metalloids, phosphates, etc. The approach also lends itself to the development of scalable processes for production of nanostructured battery materials. Mechanistic analysis was performed and reveals that the performance enhancement of the embedded nanocomposite configuration is mainly brought about by the mechanical buffering effect offered by the carbon matrix. The active material loading was shown to be an important factor in the design of the composites as electrode materials. In addition to the polymerization-based approach, other in situ methods such as one based on spray pyrolysis are also explored and demonstrate the versatility of the in situ

  4. Fabrication of a nanosize-Pt-embedded membrane electrode assembly to enhance the utilization of Pt in proton exchange membrane fuel cells.

    Science.gov (United States)

    Choe, Junseok; Kim, Doyoung; Shim, Jinyong; Lee, Inhae; Tak, Yongsug

    2011-08-01

    A procedure to locate the Pt nanostructure inside the hydrophilic channel of a Nafion membrane was developed in order to enhance Pt utilization in PEMFCs. Nanosize Pt-embedded MEA was constructed by Cu electroless plating and subsequent Pt electrodeposition inside the hydrophilic channels of the Nafion membrane. The metallic Pt nanostructure fabricated inside the membrane was employed as an oxygen reduction catalyst for a PEMFC and facilitated effective use of the hydrophilic channels inside the membrane. Compared to the conventional MEA, a Pt-embedded MEA with only 68% Pt loading showed better PEMFC performance.

  5. Fabrication of nanowires and nanostructures

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Piraux, L.

    2009-01-01

    We report on different approaches that we have adopted and developed for the fabrication of nanowires and nanostructures. Methods based on template synthesis and on self organization seem to be the most promising for the fabrication of nanomaterials and nanostructures due to their easiness and low...... cost. The development of a supported nanoporous alumina template and the possibility of using this template to combine electrochemical synthesis with lithographic methods open new ways for the fabrication of complex nanostructures. The numerous advantages of the supported template and its compatibility...

  6. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing (Penn); (Xian Jiaotong); (CIW); (Simon); (TRS Techn); (Wollongong)

    2016-12-19

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

  7. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals.

    Science.gov (United States)

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R; Chen, Long-Qing

    2016-12-19

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50-80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

  8. Determination of ferroelectric contributions to electromechanical response by frequency dependent piezoresponse force microscopy.

    Science.gov (United States)

    Seol, Daehee; Park, Seongjae; Varenyk, Olexandr V; Lee, Shinbuhm; Lee, Ho Nyung; Morozovska, Anna N; Kim, Yunseok

    2016-07-28

    Hysteresis loop analysis via piezoresponse force microscopy (PFM) is typically performed to probe the existence of ferroelectricity at the nanoscale. However, such an approach is rather complex in accurately determining the pure contribution of ferroelectricity to the PFM. Here, we suggest a facile method to discriminate the ferroelectric effect from the electromechanical (EM) response through the use of frequency dependent ac amplitude sweep with combination of hysteresis loops in PFM. Our combined study through experimental and theoretical approaches verifies that this method can be used as a new tool to differentiate the ferroelectric effect from the other factors that contribute to the EM response.

  9. Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

    International Nuclear Information System (INIS)

    Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

    2007-01-01

    The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

  10. Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali (IISER M), Sector 81, S. A. S. Nagar, Manauli PO-140306 (India); Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in [New Chemistry Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore 560064 (India)

    2014-09-15

    It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

  11. Investigation of the switching characteristics in ferroelectrics by first-order reversal curve diagrams

    International Nuclear Information System (INIS)

    Stancu, Alexandru; Mitoseriu, Liliana; Stoleriu, Laurentiu; Piazza, Daniele; Galassi, Carmen; Ricinschi, Dan; Okuyama, Masanori

    2006-01-01

    First-order reversal curves (FORC) diagrams are proposed for describing the switching properties in ferroelectric materials. The method is applied for Pb(Zr,Ti)O 3 (PZT) ferroelectric ceramics and films with different P(E) hysteresis and microstructural characteristics. The separation of the reversible and irreversible contributions to the ferroelectric polarization is explained in terms of microstructural characteristics of the investigated samples. The influence of parameters as field frequency, crystallite orientation, ferroelectric fatigue and porosity degree on the FORC diagrams is discussed

  12. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  13. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin

    2014-11-12

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

  14. Depolarization corrections to the coercive field in thin-film ferroelectrics

    International Nuclear Information System (INIS)

    Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  15. Depolarization corrections to the coercive field in thin-film ferroelectrics

    CERN Document Server

    Dawber, M; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  16. Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

    2008-01-01

    Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

  17. Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

    Science.gov (United States)

    Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

    2016-12-01

    With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

  18. Phase-Field Simulations of Topological Structures and Topological Phase Transitions in Ferroelectric Oxide Heterostructures

    Science.gov (United States)

    Zijian Hong

    layers. It is revealed that the bilayer system could facilitate the motion of the ferroelastic adomain in the top T-layer since the a-domain is not directly embedded in the substrate with high density of defects which can pin the domain wall. Excellent dielectric and piezoelectric responses are demonstrated due to the large polarization rotation and the highly mobile domain walls in both the thick and thin bilayer systems. density of defects which can pin the domain wall. Excellent dielectric and piezoelectric responses are demonstrated due to the large polarization rotation and the highly mobile domain walls in both the thick and thin bilayer systems. The long-range ordered polar vortex array is observed in the (PbTiO 3)n/(SrTiO3)n (PTOn/STOn with n=10˜20) superlattices with combined experimental and theoretical studies. Phase-field simulations reveal the three-dimensional textures of the polar vortex arrays. The neighboring vortices rotate in the opposite directions, which extended into tube-like vortex lines perpendicular to the vortex plane. The thickness-dependent phase diagram is predicted and verified by experimental observations. The energetics (the contributions from elastic, electrostatic, gradient and Landau chemical energies) accompanying the phase transitions are analyzed in details. The dominating depolarization energy at short periodicity (n20) leads to the formation of flux-closure domain with both 90° a/c domain walls and 180° c+/c - domain walls, counterbalancing of the individual energies at intermediate periodicities (n=10˜20) gives rise to the formation of exotic vortex structure with continuous polarization rotation surrounding a singularity-like vortex core. Analytical calculations are performed, showing that the stability of the polar vortex structure is directly related to the length of Pi times bulk domain wall width, where vortex structure can be expected when the geometric length scale of the ferroelectrics is close to this value. The role

  19. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  20. One-dimensional thermodynamical model for poling of ferroelectric ceramics

    International Nuclear Information System (INIS)

    Bassiouny, E.

    1990-11-01

    In this work, we use a model developed to deduce a one-dimensional model for the description of the poling of ferroelectric ceramics. This is built within the scheme of the thermodynamical theory of internal variables. The model produces both plastic and electric hysteresis effects in the form of ''plasticity'', i.e., rate-independent evolution equations for the plastic strain, and the residual electric polarization and both mechanical and electric hardenings. The influence of stresses on ferroelectric hysteresis loops through piezoelectricity and electrostriction is a natural outcome of this model. Some simple experimental methods for the determination of the material coefficients of the considered ceramics are suggested. (author). 21 refs, 3 figs

  1. Critical properties of symmetric nanoscale metal-ferroelectric-metal capacitors

    International Nuclear Information System (INIS)

    Zheng Yue; Cai, M.Q.; Woo, C.H.

    2010-01-01

    The size, surface and interface effects on the magnitude and stability of spontaneous polarization in a symmetric nanoscale ferroelectric capacitor were studied by analyzing its evolutionary trajectory based on a thermodynamic model. Analytic expressions of the Curie temperature, spontaneous polarization, critical thickness and the Curie-Weiss relation were derived, taking into account the effects of the depolarization field, built-in electric field, interfaces and surfaces. Our results show that the critical properties are not only functions of the ambient temperature, misfit strain and electromechanical boundary conditions, but also depend on the characteristics of electrodes, surfaces and interfaces, through the incomplete charge compensation, near-surface variation of polarization and work function steps of ferroelectric-electrode interfaces, which are adjustable.

  2. Ferroelectric inverse opals with electrically tunable photonic band gap

    International Nuclear Information System (INIS)

    Li Bo; Zhou Ji; Li Longtu; Wang Xingjun; Liu Xiaohan; Zi Jian

    2003-01-01

    We present a scheme for tuning the photonic band gap (PBG) by an external electric field in a ferroelectric inverse opal structure. The inverse opals, consisting of ferroelectric (Pb,La)(Zr,Ti)O 3 (PLZT) ceramics, were synthesized by a sol-gel process. Optical reflection spectra show that the PBG of the PLZT inverse opals shifts continuously with the change in the applied electric field. As the photonic crystals (PCs) consist of the high-refractive-index constituent and possess an 'all-solid' structure, it should supply a more reliable mode to tune the PBG by the electric field for the superprism effect in PCs. It should be of high interest in device applications

  3. High T(sub c) superconductor/ferroelectric heterostructures

    Science.gov (United States)

    Ryder, Daniel F., Jr.

    1994-12-01

    Thin films of the ferroelectric perovskite, Ba(x) Sr(1-x) TiO3 (BST), were deposited on superconducting (100)YBa2Cu3O(x)(YBCO)/ (100)Yttria-stabilized zirconia(YSZ) substrates and (100)Si by ion-beam sputtering. Microstructural and compositional features of the ceramic bilayer were assessed by a combination of x-ray diffraction (XRD) and scanning electron microscopy. The films were smooth and featureless, and energy dispersive x-ray spectroscopy (EDX) data indicated that film composition closely matched target composition. XRD analysis showed that films deposited on YBCO substrates were highly c-axis textured, while the films deposited on (100)Si did not exhibit any preferred growth morphology. The superconducting properties of the YBCO substrate layer were maintained throughout the processing stages and, as such, it was demonstrated that ion beam sputtering is a viable method for the deposition of Ferroelectric/YBCO heterostructures.

  4. A finite element model of ferroelectric/ferroelastic polycrystals

    Energy Technology Data Exchange (ETDEWEB)

    HWANG,STEPHEN C.; MCMEEKING,ROBERT M.

    2000-02-17

    A finite element model of polarization switching in a polycrystalline ferroelectric/ferroelastic ceramic is developed. It is assumed that a crystallite switches if the reduction in potential energy of the polycrystal exceeds a critical energy barrier per unit volume of switching material. Each crystallite is represented by a finite element with the possible dipole directions assigned randomly subject to crystallographic constraints. The model accounts for both electric field induced (i.e. ferroelectric) switching and stress induced (i.e. ferroelastic) switching with piezoelectric interactions. Experimentally measured elastic, dielectric, and piezoelectric constants are used consistently, but different effective critical energy barriers are selected phenomenologically. Electric displacement versus electric field, strain versus electric field, stress versus strain, and stress versus electric displacement loops of a ceramic lead lanthanum zirconate titanate (PLZT) are modeled well below the Curie temperature.

  5. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Jay L. Hirshfield

    2012-07-03

    Design, analysis, and low-power tests are described on a ferroelectric tuner concept that could be used for controlling external coupling to RF cavities for the superconducting Energy Recovery Linac (ERL) in the electron cooler of the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory (BNL). The tuner configuration utilizes several small donut-shaped ferroelectric assemblies, which allow the design to be simpler and more flexible, as compared to previous designs. Design parameters for 704 and 1300 MHz versions of the tuner are given. Simulation results point to efficient performance that could reduce by a factor-of-ten the RF power levels required for driving superconducting cavities in the BNL ERL.

  6. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    International Nuclear Information System (INIS)

    Hirshfield, Jay L.

    2012-01-01

    Design, analysis, and low-power tests are described on a ferroelectric tuner concept that could be used for controlling external coupling to RF cavities for the superconducting Energy Recovery Linac (ERL) in the electron cooler of the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory (BNL). The tuner configuration utilizes several small donut-shaped ferroelectric assemblies, which allow the design to be simpler and more flexible, as compared to previous designs. Design parameters for 704 and 1300 MHz versions of the tuner are given. Simulation results point to efficient performance that could reduce by a factor-of-ten the RF power levels required for driving superconducting cavities in the BNL ERL.

  7. Tunable multiband ferroelectric devices for reconfigurable RF-frontends

    CERN Document Server

    Zheng, Yuliang

    2013-01-01

    Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film deposition and multilayer circuitry. Next, it highlights the original classes of thin-film ferroelectric devices, including stratified metal-insulator-metal varactors with suppression of acoustic resonance and programmable bi-stable high frequency capacitors. At the end the book analyzes how the frontends can be reformed b...

  8. Analysis and Optimization of Thin Film Ferroelectric Phase Shifters

    Science.gov (United States)

    Romanofsky, Robert R.; VanKeuls, Fred W.; Warner, Joseph D.; Mueller, Carl H.; Alterovitz, Samuel A.; Miranda, Felix A.; Qureshi, A. Haq; Romanofsky, Robert R. (Technical Monitor)

    2000-01-01

    Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

  9. Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

    Science.gov (United States)

    Paik, Young Hun

    As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of

  10. Modeling two-phase ferroelectric composites by sequential laminates

    International Nuclear Information System (INIS)

    Idiart, Martín I

    2014-01-01

    Theoretical estimates are given for the overall dissipative response of two-phase ferroelectric composites with complex particulate microstructures under arbitrary loading histories. The ferroelectric behavior of the constituent phases is described via a stored energy density and a dissipation potential in accordance with the theory of generalized standard materials. An implicit time-discretization scheme is used to generate a variational representation of the overall response in terms of a single incremental potential. Estimates are then generated by constructing sequentially laminated microgeometries of particulate type whose overall incremental potential can be computed exactly. Because they are realizable, by construction, these estimates are guaranteed to conform with any material constraints, to satisfy all pertinent bounds and to exhibit the required convexity properties with no duality gap. Predictions for representative composite and porous systems are reported and discussed in the light of existing experimental data. (paper)

  11. Band gap engineering strategy via polarization rotation in perovskite ferroelectrics

    International Nuclear Information System (INIS)

    Wang, Fenggong; Grinberg, Ilya; Rappe, Andrew M.

    2014-01-01

    We propose a strategy to engineer the band gaps of perovskite oxide ferroelectrics, supported by first principles calculations. We find that the band gaps of perovskites can be substantially reduced by as much as 1.2 eV through local rhombohedral-to-tetragonal structural transition. Furthermore, the strong polarization of the rhombohedral perovskite is largely preserved by its tetragonal counterpart. The B-cation off-center displacements and the resulting enhancement of the antibonding character in the conduction band give rise to the wider band gaps of the rhombohedral perovskites. The correlation between the structure, polarization orientation, and electronic structure lays a good foundation for understanding the physics of more complex perovskite solid solutions and provides a route for the design of photovoltaic perovskite ferroelectrics

  12. Phylogenetic trees and Euclidean embeddings.

    Science.gov (United States)

    Layer, Mark; Rhodes, John A

    2017-01-01

    It was recently observed by de Vienne et al. (Syst Biol 60(6):826-832, 2011) that a simple square root transformation of distances between taxa on a phylogenetic tree allowed for an embedding of the taxa into Euclidean space. While the justification for this was based on a diffusion model of continuous character evolution along the tree, here we give a direct and elementary explanation for it that provides substantial additional insight. We use this embedding to reinterpret the differences between the NJ and BIONJ tree building algorithms, providing one illustration of how this embedding reflects tree structures in data.

  13. Tensor Train Neighborhood Preserving Embedding

    Science.gov (United States)

    Wang, Wenqi; Aggarwal, Vaneet; Aeron, Shuchin

    2018-05-01

    In this paper, we propose a Tensor Train Neighborhood Preserving Embedding (TTNPE) to embed multi-dimensional tensor data into low dimensional tensor subspace. Novel approaches to solve the optimization problem in TTNPE are proposed. For this embedding, we evaluate novel trade-off gain among classification, computation, and dimensionality reduction (storage) for supervised learning. It is shown that compared to the state-of-the-arts tensor embedding methods, TTNPE achieves superior trade-off in classification, computation, and dimensionality reduction in MNIST handwritten digits and Weizmann face datasets.

  14. Electrons in Nanostructures

    DEFF Research Database (Denmark)

    Flindt, Christian

    2007-01-01

    in the possibilities o®ered by the quantum mechanical behavior of electrons when it comes to informa- tion processing. This branch of research is also concerned with fundamental questions in physics. Besides an introduction to the above-mentioned subjects, the thesis con- tains a number of contributions to the ¯elds...... of coherent electron manip- ulation and the statistical description of electron transport through nano- devices. The physics of the electrons are described with a combination of numerical methods, developed and applied in the thesis, and more analytical approaches, which are also discussed. The thesis......-based communication. The statistical description of electron transport through nanostructures is based on rate equations, and the primary contribution of the thesis in that respect is the development of a method that allows for the calculation of the distribution of electrons passing through a device. The method...

  15. Magnetism in carbon nanostructures

    CERN Document Server

    Hagelberg, Frank

    2017-01-01

    Magnetism in carbon nanostructures is a rapidly expanding field of current materials science. Its progress is driven by the wide range of applications for magnetic carbon nanosystems, including transmission elements in spintronics, building blocks of cutting-edge nanobiotechnology, and qubits in quantum computing. These systems also provide novel paradigms for basic phenomena of quantum physics, and are thus of great interest for fundamental research. This comprehensive survey emphasizes both the fundamental nature of the field, and its groundbreaking nanotechnological applications, providing a one-stop reference for both the principles and the practice of this emerging area. With equal relevance to physics, chemistry, engineering and materials science, senior undergraduate and graduate students in any of these subjects, as well as all those interested in novel nanomaterials, will gain an in-depth understanding of the field from this concise and self-contained volume.

  16. Tunable and stable in time ferroelectric imprint through polarization coupling

    NARCIS (Netherlands)

    Ghosh, Anirban; Koster, Gertjan; Rijnders, Augustinus J.H.M.

    2016-01-01

    Here we demonstrate a method to tune a ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarization of PbZrxTi(1−x)O3. SrRuO3/PbZrxTi(1−x)O3/ZnO/SrRuO3 heterostructures were grown with different ZnO thicknesses. It

  17. Organic electronic memory based on a ferroelectric polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, R; Fruebing, P; Gerhard, R [Department of Physics and Astronomy, University of Potsdam, Karl-Liebknecht Str., 24-25, 14476 Potsdam (Germany); Taylor, D M, E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

    2011-06-23

    Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.

  18. Complex permittivity measurements of ferroelectric employing composite dielectric resonator technique

    Czech Academy of Sciences Publication Activity Database

    Krupka, J.; Zychowicz, T.; Bovtun, Viktor; Veljko, Sergiy

    2006-01-01

    Roč. 53, č. 10 (2006), s. 1883-1888 ISSN 0885-3010 R&D Projects: GA AV ČR(CZ) IAA1010213; GA ČR(CZ) GA202/04/0993; GA ČR(CZ) GA202/06/0403 Institutional research plan: CEZ:AV0Z10100520 Keywords : dielectric resonator * ferroelectrics * microwave measurements Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.729, year: 2006

  19. Static negative capacitance of a ferroelectric nano-domain nucleus.

    Czech Academy of Sciences Publication Activity Database

    Sluka, T.; Mokrý, Pavel; Setter, N.

    2017-01-01

    Roč. 111, č. 15 (2017), č. článku 152902. ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : Ferroelectric materials * Capacitors * Bipolar transistors * Electrodes * Dielectrics Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.411, year: 2016

  20. On the persistence of polar domains in ultrathin ferroelectric capacitors

    Czech Academy of Sciences Publication Activity Database

    Zubko, P.; Lu, H.; Bark, C.-W.; Martí, Xavier; Santiso, J.; Eom, C.-B.; Catalan, G.; Gruverman, A.

    2017-01-01

    Roč. 29, č. 28 (2017), s. 1-8, č. článku 284001. ISSN 1361-648X R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : ultrathin barium titanate * tunnel junctions * ferroelectric domains * polarization screening * retention * negative capacitance Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)

  1. Nanostructured Photovoltaics for Space Power

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA NSTRF proposal entitled Nanostructured Photovoltaics for Space Power is targeted towards research to improve the current state of the art photovoltaic...

  2. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  3. Nanostructured Materials for Renewable Energy

    Energy Technology Data Exchange (ETDEWEB)

    None

    2009-11-01

    This factsheet describes a research project whose overall objective is to advance the fundamental understanding of novel photoelectronic organic device structures integrated with inorganic nanostructures, while also expanding the general field of nanomaterials for renewable energy devices and systems.

  4. Ferroelectric Plasma Source for Heavy Ion Beam Charge Neutralization

    CERN Document Server

    Efthimion, Philip; Gilson, Erik P; Grisham, Larry; Logan, B G; Waldron, William; Yu, Simon

    2005-01-01

    Plasmas are employed as a medium for charge neutralizing heavy ion beams to allow them to focus to a small spot size. Calculations suggest that plasma at a density of 1-100 times the ion beam density and at a length ~ 0.1-1 m would be suitable. To produce 1 meter plasma, large-volume plasma sources based upon ferroelectric ceramics are being considered. These sources have the advantage of being able to increase the length of the plasma and operate at low neutral pressures. The source will utilize the ferroelectric ceramic BaTiO3 to form metal plasma. The drift tube inner surface of the Neutralized Drift Compression Experiment (NDCX) will be covered with ceramic. High voltage (~ 1-5 kV) is applied between the drift tube and the front surface of the ceramic by placing a wire grid on the front surface. A prototype ferroelectric source 20 cm long produced plasma densities ~ 5x1011 cm-3. The source was integrated into the experiment and successfully charge neutralized the K ion beam. Presently, the 1 meter source ...

  5. Why is the electrocaloric effect so small in ferroelectrics?

    Science.gov (United States)

    Guzman-Verri, Gian G.; Littlewood, Peter B.

    2015-03-01

    Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we present meaningful figures of merit derived from well-known microscopic models of ferroelectricity which provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipole forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. Work at Argonne is supported by the U.S. Department of Energy, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.

  6. Rewritable ferroelectric vortex pairs in BiFeO3

    Science.gov (United States)

    Li, Yang; Jin, Yaming; Lu, Xiaomei; Yang, Jan-Chi; Chu, Ying-Hao; Huang, Fengzhen; Zhu, Jinsong; Cheong, Sang-Wook

    2017-08-01

    Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.

  7. Electric field cycling behavior of ferroelectric hafnium oxide.

    Science.gov (United States)

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  8. Ferroelectric materials for piezoelectric actuators by optimal design

    International Nuclear Information System (INIS)

    Jayachandran, K.P.; Guedes, J.M.; Rodrigues, H.C.

    2011-01-01

    Research highlights: → Microstructure optimization of ferroelectric materials by stochastic optimization. → Polycrystalline ferroelectrics possess better piezo actuation than single crystals. → Randomness of the grain orientations would enhance the overall piezoelectricity. - Abstract: Optimization methods provide a systematic means of designing heterogeneous materials with tailored properties and microstructures focussing on a specific objective. An optimization procedure incorporating a continuum modeling is used in this work to identify the ideal orientation distribution of ferroelectrics (FEs) for application in piezoelectric actuators. Piezoelectric actuation is dictated primarily by the piezoelectric strain coefficients d iμ . Crystallographic orientation is inextricably related to the piezoelectric properties of FEs. This suggests that piezoelectric properties can be tailored by a proper choice of the parameters which control the orientation distribution. Nevertheless, this choice is complicated and it is impossible to analyze all possible combinations of the distribution parameters or the angles themselves. Stochastic optimization combined with a generalized Monte Carlo scheme is used to optimize the objective functions, the effective piezoelectric coefficients d 31 and d 15 . The procedure is applied to heterogeneous, polycrystalline, FE ceramics which are essentially an aggregate of variously oriented grains (crystallites). Global piezoelectric properties are calculated using the homogenization method at each grain configuration chosen by the optimization algorithm. Optimal design variables and microstructure that would generate polycrystalline configurations that multiply the macroscopic piezoelectricity are identified.

  9. Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

    Science.gov (United States)

    Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

    2016-10-12

    Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

  10. Phonon localization transition in relaxor ferroelectric PZN-5%PT

    International Nuclear Information System (INIS)

    Manley, Michael E.; Christianson, Andrew D.; Abernathy, Douglas L.; Sahul, Raffi

    2017-01-01

    Relaxor ferroelectric behavior occurs in many disordered ferroelectric materials but is not well understood at the atomic level. Recent experiments and theoretical arguments indicate that Anderson localization of phonons instigates relaxor behavior by driving the formation of polar nanoregions (PNRs). Here, we use inelastic neutron scattering to observe phonon localization in relaxor ferroelectric PZN-5%PT (0.95[Pb(Zn 1/3 Nb 2/3 )O 3 ]–0.05PbTiO 3 ) and detect additional features of the localization process. In the lead, up to phonon localization on cooling, the local resonant modes that drive phonon localization increase in number. The increase in resonant scattering centers is attributed to a known increase in the number of locally off centered Pb atoms on cooling. The transition to phonon localization occurs when these random scattering centers increase to a concentration where the Ioffe-Regel criterion is satisfied for localizing the phonon. Finally, we also model the effects of damped mode coupling on the observed phonons and phonon localization structure.

  11. Above-room-temperature ferroelectricity and antiferroelectricity in benzimidazoles

    Science.gov (United States)

    Horiuchi, Sachio; Kagawa, Fumitaka; Hatahara, Kensuke; Kobayashi, Kensuke; Kumai, Reiji; Murakami, Youichi; Tokura, Yoshinori

    2012-12-01

    The imidazole unit is chemically stable and ubiquitous in biological systems; its proton donor and acceptor moieties easily bind molecules into a dipolar chain. Here we demonstrate that chains of these amphoteric molecules can often be bistable in electric polarity and electrically switchable, even in the crystalline state, through proton tautomerization. Polarization-electric field (P-E) hysteresis experiments reveal a high electric polarization ranging from 5 to 10 μC cm-2 at room temperature. Of these molecules, 2-methylbenzimidazole allows ferroelectric switching in two dimensions due to its pseudo-tetragonal crystal symmetry. The ferroelectricity is also thermally robust up to 400 K, as is that of 5,6-dichloro-2-methylbenzimidazole (up to ~373 K). In contrast, three other benzimidazoles exhibit double P-E hysteresis curves characteristic of antiferroelectricity. The diversity of imidazole substituents is likely to stimulate a systematic exploration of various structure-property relationships and domain engineering in the quest for lead- and rare-metal-free ferroelectric devices.

  12. Quantum Nanostructures by Droplet Epitaxy

    OpenAIRE

    Somsak Panyakeow

    2009-01-01

    Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

  13. Nanostructures via DNA scaffold metallization

    OpenAIRE

    Ning, C.; Zinchenko, A.; Baigl, D.; Pyshkina, O.; Sergeyev, V.; Endo, Kazunaka; Yoshikawa, K.

    2005-01-01

    The critical role of polymers in process of noble metals nanostructures formation is well known, however, the use of DNA chain template in this process is yet largely unknown. In this study we demonstrate different ways of silver deposition on DNA template and report the influence of silver nanostructures formation on DNA conformational state. Metallization of DNA chain proceeds by two different scenarios depending on DNA conformation. If DNA chain is unfolded (elongated) chain, silver reduct...

  14. Parametric embedding for class visualization.

    Science.gov (United States)

    Iwata, Tomoharu; Saito, Kazumi; Ueda, Naonori; Stromsten, Sean; Griffiths, Thomas L; Tenenbaum, Joshua B

    2007-09-01

    We propose a new method, parametric embedding (PE), that embeds objects with the class structure into a low-dimensional visualization space. PE takes as input a set of class conditional probabilities for given data points and tries to preserve the structure in an embedding space by minimizing a sum of Kullback-Leibler divergences, under the assumption that samples are generated by a gaussian mixture with equal covariances in the embedding space. PE has many potential uses depending on the source of the input data, providing insight into the classifier's behavior in supervised, semisupervised, and unsupervised settings. The PE algorithm has a computational advantage over conventional embedding methods based on pairwise object relations since its complexity scales with the product of the number of objects and the number of classes. We demonstrate PE by visualizing supervised categorization of Web pages, semisupervised categorization of digits, and the relations of words and latent topics found by an unsupervised algorithm, latent Dirichlet allocation.

  15. Embedded System for Biometric Identification

    OpenAIRE

    Rosli, Ahmad Nasir Che

    2010-01-01

    This chapter describes the design and implementation of an Embedded System for Biometric Identification from hardware and software perspectives. The first part of the chapter describes the idea of biometric identification. This includes the definition of

  16. Synthesis of vertically aligned metal oxide nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-03-03

    Metal oxide nanostructure and methods of making metal oxide nanostructures are provided. The metal oxide nanostructures can be 1 -dimensional nanostructures such as nanowires, nanofibers, or nanotubes. The metal oxide nanostructures can be doped or undoped metal oxides. The metal oxide nanostructures can be deposited onto a variety of substrates. The deposition can be performed without high pressures and without the need for seed catalysts on the substrate. The deposition can be performed by laser ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc oxide nanostructure can be doped with a rare earth metal such as gadolinium. The metal oxide nanostructures can be used in many devices including light-emitting diodes and solar cells.

  17. Mechanical design of DNA nanostructures

    Science.gov (United States)

    Castro, Carlos E.; Su, Hai-Jun; Marras, Alexander E.; Zhou, Lifeng; Johnson, Joshua

    2015-03-01

    Structural DNA nanotechnology is a rapidly emerging field that has demonstrated great potential for applications such as single molecule sensing, drug delivery, and templating molecular components. As the applications of DNA nanotechnology expand, a consideration of their mechanical behavior is becoming essential to understand how these structures will respond to physical interactions. This review considers three major avenues of recent progress in this area: (1) measuring and designing mechanical properties of DNA nanostructures, (2) designing complex nanostructures based on imposed mechanical stresses, and (3) designing and controlling structurally dynamic nanostructures. This work has laid the foundation for mechanically active nanomachines that can generate, transmit, and respond to physical cues in molecular systems.Structural DNA nanotechnology is a rapidly emerging field that has demonstrated great potential for applications such as single molecule sensing, drug delivery, and templating molecular components. As the applications of DNA nanotechnology expand, a consideration of their mechanical behavior is becoming essential to understand how these structures will respond to physical interactions. This review considers three major avenues of recent progress in this area: (1) measuring and designing mechanical properties of DNA nanostructures, (2) designing complex nanostructures based on imposed mechanical stresses, and (3) designing and controlling structurally dynamic nanostructures. This work has laid the foundation for mechanically active nanomachines that can generate, transmit, and respond to physical cues in molecular systems. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07153k

  18. Hardware Support for Embedded Java

    DEFF Research Database (Denmark)

    Schoeberl, Martin

    2012-01-01

    The general Java runtime environment is resource hungry and unfriendly for real-time systems. To reduce the resource consumption of Java in embedded systems, direct hardware support of the language is a valuable option. Furthermore, an implementation of the Java virtual machine in hardware enables...... worst-case execution time analysis of Java programs. This chapter gives an overview of current approaches to hardware support for embedded and real-time Java....

  19. Molecular Properties through Polarizable Embedding

    DEFF Research Database (Denmark)

    Olsen, Jógvan Magnus Haugaard; Kongsted, Jacob

    2011-01-01

    We review the theory related to the calculation of electric and magnetic molecular properties through polarizable embedding. In particular, we derive the expressions for the response functions up to the level of cubic response within the density functional theory-based polarizable embedding (PE......-DFT) formalism. In addition, we discuss some illustrative applications related to the calculation of nuclear magnetic resonance parameters, nonlinear optical properties, and electronic excited states in solution....

  20. A Foundation for Embedded Languages

    DEFF Research Database (Denmark)

    Rhiger, Morten

    2003-01-01

    Recent work on embedding object languages into Haskell use "phantom types" (i.e., parameterized types whose parameter does not occur on the right-hand side of the type definition) to ensure that the embedded object-language terms are simply typed. But is it a safe assumption that only simply...... be answered affirmatively for an idealized Haskell-like language and discuss to which extent Haskell can be used as a meta-language....

  1. Unsupervised Document Embedding With CNNs

    OpenAIRE

    Liu, Chundi; Zhao, Shunan; Volkovs, Maksims

    2017-01-01

    We propose a new model for unsupervised document embedding. Leading existing approaches either require complex inference or use recurrent neural networks (RNN) that are difficult to parallelize. We take a different route and develop a convolutional neural network (CNN) embedding model. Our CNN architecture is fully parallelizable resulting in over 10x speedup in inference time over RNN models. Parallelizable architecture enables to train deeper models where each successive layer has increasin...

  2. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  3. Broadband THz pulse emission and transmission properties of nanostructured Pt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Mingzhe [Department of Physics and Electronics, Liupanshui Normal University, Liupanshui, Guizhou 553004 (China); College of Electronics and Information, Guizhou University, Huaxi 550025, Guiyang, Guizhou (China); Mu, Kaijun; Zhang, Cunlin [Department of Physics, Capital Normal University, Yuquan Road 100082, Beijing (China); Gu, Haoshuang, E-mail: guhs@hubu.edu.cn [Department of Electronic Sci& Tech, Hubei University, Xueyuan Road 430062, Wuhan, Hubei (China); Ding, Zhao [College of Electronics and Information, Guizhou University, Huaxi 550025, Guiyang, Guizhou (China)

    2015-10-01

    The THz transmission and emitting properties of a composite metallic nanostructure, composed of Ag nanowires electrodeposited in an anodic aluminum oxide (AAO) template and a Pt thin film, were investigated by using a femtosecond pulse laser irradiation. The microstructure of the above sub-wavelength nanostructure was investigated by XRD, SEM, AFM and TEM. The results indicated that the thickness of the Pt thin film was about 200 nm and the Ag nanowire array had a sparse and random distribution inside the AAO template, with a length distribution in the range of 10–25 μm. The THz radiation properties of above sub-wavelength nanostructure indicated that the generated THz fluence from the Pt film was a magnitude of μW scale with a broadband frequency range and its subsequent transmission could be significantly improved by the better impedance matching property of the Ag nanowire embedded AAO film compared with that of the empty AAO film.

  4. Nanostructured sodium lithium niobate and lithium niobium tantalate solid solutions obtained by controlled crystallization of glass

    International Nuclear Information System (INIS)

    Radonjic, L.; Todorovic, M.; Miladinovic, J.

    2005-01-01

    Transparent, nanostructured glass ceramics based on ferroelectric solid solutions of the type Na 1-x Li x NbO 3 (in very narrow composition regions for x = 0.12 and 0.93) and LiNb 1-y Ta y O 3 (y = 0.5 unlimited solid solubility), can be obtained by controlled crystallization of glass. The parent glass samples were prepared by conventional melt-quenching technique. Heat-treatment of the parent glasses was performed at the various temperatures, for the same time. The glass structure evolution during the controlled crystallization was examined by FT-IR spectroscopy analysis. Crystalline phases were identified by X-ray diffraction analysis and SEM was used for microstructure characterization. Densities of the crystallized glasses were measured by Archimedean principle. The capacitance and dielectric loss tangent were measured at a frequency of 1 kHz, at the room temperature. It was found that in the all investigated systems crystallize solid solutions Na 1-x Li x NbO 3 and LiNb 1-y Ta y O 3 in the glassy matrix, have crystal size on nanoscale (less than 100 nm), which is one of requirements to get a transparent glass ceramic that could be a good ferroelectric material regarding to the measured properties

  5. Modified wound dressing with phyto-nanostructured coating to prevent staphylococcal and pseudomonal biofilm development

    OpenAIRE

    Anghel, Ion; Holban, Alina Maria; Grumezescu, Alexandru Mihai; Andronescu, Ecaterina; Ficai, Anton; Anghel, Alina Georgiana; Maganu, Maria; Laz?r, Veronica; Chifiriuc, Mariana Carmen

    2012-01-01

    This paper reports a newly fabricated nanophyto-modified wound dressing with microbicidal and anti-adherence properties. Nanofluid-based magnetite doped with eugenol or limonene was used to fabricate modified wound dressings. Nanostructure coated materials were characterized by TEM, XRD, and FT-IR. For the quantitative measurement of biofilm-embedded microbial cells, a culture-based method for viable cell count was used. The optimized textile dressing samples proved to be more resistant to st...

  6. High-performance solution-processed polymer ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

    We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

  7. Organic non-volatile memories from ferroelectric phase-separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

    2008-07-01

    New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

  8. Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

    NARCIS (Netherlands)

    Lee, J.; Breemen, A.J.J.M. van; Khikhlovskyi, V.; Kemerink, M.; Janssen, R.A.J.; Gelinck, G.H.

    2016-01-01

    We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism

  9. Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems

    NARCIS (Netherlands)

    Klee, M.; Beelen, D.; Keurl, W.; Kiewitt, R.; Kumar, B.; Mauczok, R.; Reimann, K.; Renders, Ch.; Roest, A.; Roozeboom, F.; Steeneken, P.G.; Tiggelman, M.P.J.; Vanhelmont, F.; Wunnicke, O.; Lok, P.; Neumann, K.; Fraser, J.; Schmitz, G.

    2007-01-01

    Dielectric, ferroelectric and piezoelectric thin films are getting more and more attention for next generation mobile communication and medical systems. Thin film technologies based on dielectric, ferroelectric and piezoelectric thin films enable System-in-Package (SiP) devices, resulting in optimal

  10. Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends

    NARCIS (Netherlands)

    Asadi, Kamal; de Boer, Tom G.; Blom, Paul W. M.; de Leeuw, Dago M.

    2009-01-01

    Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

  11. Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends

    NARCIS (Netherlands)

    Asadi, K.; Boer, T.G. de; Blom, P.W.M.; Leeuw, D.M. de

    2009-01-01

    Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

  12. A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

    Directory of Open Access Journals (Sweden)

    S. Riedel

    2016-09-01

    Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

  13. Giant enhancement in the ferroelectric field effect using a polarization gradient

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zongquan [Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Islam, Mohammad A. [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Physics, State University of New York at Oswego, Oswego, New York 13126 (United States); Spanier, Jonathan E., E-mail: spanier@drexel.edu [Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

    2015-10-19

    Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO{sub 3} (LAO)-SrTiO{sub 3} (STO) interface. However, strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Here, through application of phenomenological Landau-Ginzburg-Devonshire theory and self-consistent Poisson-Schrödinger model calculations, we show how compositional grading of PbZr{sub 1−x}Ti{sub x}O{sub 3} ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable breakthrough performance of ferroelectric non-volatile memories.

  14. Thick-film processing of Pb5Ge3O11-based ferroelectric glass-ceramics

    International Nuclear Information System (INIS)

    Cornejo, I.A.; Haun, M.J.

    1996-01-01

    Processing techniques were investigated to produce c-axis orientation, or texture, of ferroelectric Pb 5 Ge 3 O 11 -based glass-ceramic compositions during crystallization of amorphous thick-film printed samples from the Pb 5 Ge 3 O 11 -PbTiO 3 (PG-PT) and Pb 5 Ge 3 O 11 -Pb(Zr 1/2 Ti 1/2 )O 3 (PG-PZT) systems. In these systems the PG crystallized into a ferroelectric phase, producing a multiple ferroelectric phase composite at low temperatures, PG-PT or PG-PZT. In this way the non-ferroelectric component of traditional ferroelectric glass-ceramics was eliminated

  15. Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

    Science.gov (United States)

    Lee, Jung-Kun; Nastasi, Michael

    2012-11-01

    The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

  16. Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

    Directory of Open Access Journals (Sweden)

    Jianyi Liu

    2014-09-01

    Full Text Available This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc. that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads.

  17. The nanostructure problem

    International Nuclear Information System (INIS)

    Billinge, S.

    2010-01-01

    Diffraction techniques are making progress in tackling the difficult problem of solving the structures of nanoparticles and nanoscale materials. The great gift of x-ray crystallography has made us almost complacent in our ability to locate the three-dimensional coordinates of atoms in a crystal with a precision of around 10 -4 nm. However, the powerful methods of crystallography break down for structures in which order only extends over a few nanometers. In fact, as we near the one hundred year mark since the birth of crystallography, we face a resilient frontier in condensed matter physics: our inability to routinely and robustly determine the structure of complex nanostructured and amorphous materials. Knowing the structure and arrangement of atoms in a solid is so fundamental to understanding its properties that the topic routinely occupies the early chapters of every solid-state physics textbook. Yet what has become clear with the emergence of nanotechnology is that diffraction data alone may not be enough to uniquely solve the structure of nanomaterials. As part of a growing effort to incorporate the results of other techniques to constrain x-ray refinements - a method called 'complex modeling' which is a simple but elegant approach for combining information from spectroscopy with diffraction data to solve the structure of several amorphous and nanostructured materials. Crystallography just works, so we rarely question how and why this is so, yet understanding the physics of diffraction can be very helpful as we consider the nanostructure problem. The relationship between the electron density distribution in three dimensions (i.e., the crystal structure) and an x-ray diffraction pattern is well established: the measured intensity distribution in reciprocal space is the square of the Fourier transform of the autocorrelation function of the electron density distribution ρ(r). The fact that we get the autocorrelation function (rather than just the density

  18. Multiscale modelling of nanostructures

    International Nuclear Information System (INIS)

    Vvedensky, Dimitri D

    2004-01-01

    Most materials phenomena are manifestations of processes that are operative over a vast range of length and time scales. A complete understanding of the behaviour of materials thereby requires theoretical and computational tools that span the atomic-scale detail of first-principles methods and the more coarse-grained description provided by continuum equations. Recent efforts have focused on combining traditional methodologies-density functional theory, molecular dynamics, Monte Carlo methods and continuum descriptions-within a unified multiscale framework. This review covers the techniques that have been developed to model various aspects of materials behaviour with the ultimate aim of systematically coupling the atomistic to the continuum descriptions. The approaches described typically have been motivated by particular applications but can often be applied in wider contexts. The self-assembly of quantum dot ensembles will be used as a case study for the issues that arise and the methods used for all nanostructures. Although quantum dots can be obtained with all the standard growth methods and for a variety of material systems, their appearance is a quite selective process, involving the competition between equilibrium and kinetic effects, and the interplay between atomistic and long-range interactions. Most theoretical models have addressed particular aspects of the ordering kinetics of quantum dot ensembles, with far fewer attempts at a comprehensive synthesis of this inherently multiscale phenomenon. We conclude with an assessment of the current status of multiscale modelling strategies and highlight the main outstanding issues. (topical review)

  19. Nuclear spins in nanostructures

    International Nuclear Information System (INIS)

    Coish, W.A.; Baugh, J.

    2009-01-01

    We review recent theoretical and experimental advances toward understanding the effects of nuclear spins in confined nanostructures. These systems, which include quantum dots, defect centers, and molecular magnets, are particularly interesting for their importance in quantum information processing devices, which aim to coherently manipulate single electron spins with high precision. On one hand, interactions between confined electron spins and a nuclear-spin environment provide a decoherence source for the electron, and on the other, a strong effective magnetic field that can be used to execute local coherent rotations. A great deal of effort has been directed toward understanding the details of the relevant decoherence processes and to find new methods to manipulate the coupled electron-nuclear system. A sequence of spectacular new results have provided understanding of spin-bath decoherence, nuclear spin diffusion, and preparation of the nuclear state through dynamic polarization and more general manipulation of the nuclear-spin density matrix through ''state narrowing.'' These results demonstrate the richness of this physical system and promise many new mysteries for the future. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  20. Phonon engineering for nanostructures.

    Energy Technology Data Exchange (ETDEWEB)

    Aubry, Sylvie (Stanford University); Friedmann, Thomas Aquinas; Sullivan, John Patrick; Peebles, Diane Elaine; Hurley, David H. (Idaho National Laboratory); Shinde, Subhash L.; Piekos, Edward Stanley; Emerson, John Allen

    2010-01-01

    Understanding the physics of phonon transport at small length scales is increasingly important for basic research in nanoelectronics, optoelectronics, nanomechanics, and thermoelectrics. We conducted several studies to develop an understanding of phonon behavior in very small structures. This report describes the modeling, experimental, and fabrication activities used to explore phonon transport across and along material interfaces and through nanopatterned structures. Toward the understanding of phonon transport across interfaces, we computed the Kapitza conductance for {Sigma}29(001) and {Sigma}3(111) interfaces in silicon, fabricated the interfaces in single-crystal silicon substrates, and used picosecond laser pulses to image the thermal waves crossing the interfaces. Toward the understanding of phonon transport along interfaces, we designed and fabricated a unique differential test structure that can measure the proportion of specular to diffuse thermal phonon scattering from silicon surfaces. Phonon-scale simulation of the test ligaments, as well as continuum scale modeling of the complete experiment, confirmed its sensitivity to surface scattering. To further our understanding of phonon transport through nanostructures, we fabricated microscale-patterned structures in diamond thin films.

  1. Photoresponsive nanostructured membranes

    KAUST Repository

    Madhavan, Poornima

    2016-07-26

    The perspective of adding stimuli-response to isoporous membranes stimulates the development of separation devices with pores, which would open or close under control of environment chemical composition, temperature or exposure to light. Changes in pH and temperature have been previously investigated. In this work, we demonstrate for the first time the preparation of photoresponsive isoporous membranes, applying self-assembly non-solvent induced phase separation to a new light responsive block copolymer. First, we optimized the membrane formation by using poly(styrene-b-anthracene methyl methacrylate-b-methylmethacrylate) (PS-b-PAnMMA-b-PMMA) copolymer, identifying the most suitable solvent, copolymer block length, and other parameters. The obtained final triblock copolymer membrane morphologies were characterized using atomic force and electron microscopy. The microscopic analysis reveals that the PS-b-PAnMMA-b-PMMA copolymer can form both lamellar and ordered hexagonal nanoporous structures on the membrane top layer in appropriate solvent compositions. The nanostructured membrane emits fluorescence due to the presence of the anthracene mid-block. On irradiation of light the PS-b-PAnMMA-b-PMMA copolymer membranes has an additional stimuli response. The anthracene group undergoes conformational changes by forming [4 + 4] cycloadducts and this alters the membrane\\'s water flux and solute retention. © 2016 The Royal Society of Chemistry.

  2. Nanostructured Basaltfiberconcrete Exploitational Characteristics

    Science.gov (United States)

    Saraykina, K. A.; Shamanov, V. A.

    2017-11-01

    The article demonstrates that the mass use of basalt fiber concrete (BFC) is constrained by insufficient study of their durability and serviceability in a variety of environments. This research is aimed at the study of the basalt fiber corrosion processes in the cement stone of BFC, the control of the new products structure formation in order to protect the reinforcing fiber from alkaline destruction and thereby improve the exploitational characteristics of the composite. The research result revealed that the modification of basaltfiber concrete by the dispersion of MWNTs contributes to the directional formation of new products in the cement matrix. The HAM additive in basaltfiberconcrete provides for the binding of portlandite to low-basic calcium hydroaluminosilicates, thus reducing the aggressive effect of the cement environment on the reinforcing fibers properties. The complex modification of BFC with nanostructured additives provides for an increase in its durability and exploitational properties (strength, frost resistance and water resistance) due to basalt fiber protection from alkali corrosion on account of the compacting of the contact zone “basalt fiber - cement stone” and designing of the new products structure and morphology of cement matrix over the fiber surface.

  3. Photoresponsive nanostructured membranes

    KAUST Repository

    Madhavan, Poornima; Sutisna, Burhannudin; Sougrat, Rachid; Nunes, Suzana Pereira

    2016-01-01

    The perspective of adding stimuli-response to isoporous membranes stimulates the development of separation devices with pores, which would open or close under control of environment chemical composition, temperature or exposure to light. Changes in pH and temperature have been previously investigated. In this work, we demonstrate for the first time the preparation of photoresponsive isoporous membranes, applying self-assembly non-solvent induced phase separation to a new light responsive block copolymer. First, we optimized the membrane formation by using poly(styrene-b-anthracene methyl methacrylate-b-methylmethacrylate) (PS-b-PAnMMA-b-PMMA) copolymer, identifying the most suitable solvent, copolymer block length, and other parameters. The obtained final triblock copolymer membrane morphologies were characterized using atomic force and electron microscopy. The microscopic analysis reveals that the PS-b-PAnMMA-b-PMMA copolymer can form both lamellar and ordered hexagonal nanoporous structures on the membrane top layer in appropriate solvent compositions. The nanostructured membrane emits fluorescence due to the presence of the anthracene mid-block. On irradiation of light the PS-b-PAnMMA-b-PMMA copolymer membranes has an additional stimuli response. The anthracene group undergoes conformational changes by forming [4 + 4] cycloadducts and this alters the membrane's water flux and solute retention. © 2016 The Royal Society of Chemistry.

  4. Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

    Science.gov (United States)

    Wouters, D. J.; Maes, D.; Goux, L.; Lisoni, J. G.; Paraschiv, V.; Johnson, J. A.; Schwitters, M.; Everaert, J.-L.; Boullart, W.; Schaekers, M.; Willegems, M.; Vander Meeren, H.; Haspeslagh, L.; Artoni, C.; Caputa, C.; Casella, P.; Corallo, G.; Russo, G.; Zambrano, R.; Monchoix, H.; Vecchio, G.; Van Autryve, L.

    2006-09-01

    Ferroelectric random access memory (FeRAM) is an attractive candidate technology for embedded nonvolatile memory, especially in applications where low power and high program speed are important. Market introduction of high-density FeRAM is, however, lagging behind standard complementary metal-oxide semiconductor (CMOS) because of the difficult integration technology. This paper discusses the major integration issues for high-density FeRAM, based on SrBi2Ta2O9 (strontium bismuth tantalate or SBT), in relation to the fabrication of our stacked cell structure. We have worked in the previous years on the development of SBT-FeRAM integration technology, based on a so-called pseudo-three-dimensional (3D) cell, with a capacitor that can be scaled from quasi two-dimensional towards a true three-dimensional capacitor where the sidewalls will importantly contribute to the signal. In the first phase of our integration development, we integrated our FeRAM cell in a 0.35μm CMOS technology. In a second phase, then, possibility of scaling of our cell is demonstrated in 0.18μm technology. The excellent electrical and reliability properties of the small integrated ferroelectric capacitors prove the feasibility of the technology, while the verification of the potential 3D effect confirms the basic scaling potential of our concept beyond that of the single-mask capacitor. The paper outlines the different material and technological challenges, and working solutions are demonstrated. While some issues are specific to our own cell, many are applicable to different stacked FeRAM cell concepts, or will become more general concerns when more developments are moving into 3D structures.

  5. Embedded Linux projects using Yocto project cookbook

    CERN Document Server

    González, Alex

    2015-01-01

    If you are an embedded developer learning about embedded Linux with some experience with the Yocto project, this book is the ideal way to become proficient and broaden your knowledge with examples that are immediately applicable to your embedded developments. Experienced embedded Yocto developers will find new insight into working methodologies and ARM specific development competence.

  6. Trusted computing for embedded systems

    CERN Document Server

    Soudris, Dimitrios; Anagnostopoulos, Iraklis

    2015-01-01

    This book describes the state-of-the-art in trusted computing for embedded systems. It shows how a variety of security and trusted computing problems are addressed currently and what solutions are expected to emerge in the coming years. The discussion focuses on attacks aimed at hardware and software for embedded systems, and the authors describe specific solutions to create security features. Case studies are used to present new techniques designed as industrial security solutions. Coverage includes development of tamper resistant hardware and firmware mechanisms for lightweight embedded devices, as well as those serving as security anchors for embedded platforms required by applications such as smart power grids, smart networked and home appliances, environmental and infrastructure sensor networks, etc. ·         Enables readers to address a variety of security threats to embedded hardware and software; ·         Describes design of secure wireless sensor networks, to address secure authen...

  7. Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

    Science.gov (United States)

    Herchig, Ryan Christopher

    Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

  8. Cobalt magnetic nanoparticles embedded in carbon matrix: biofunctional validation

    Energy Technology Data Exchange (ETDEWEB)

    Krolow, Matheus Z., E-mail: matheuskrolow@ifsul.edu.br [Universidade Federal de Pelotas, Engenharia de Materiais, Centro de Desenvolvimento Tecnologico (Brazil); Monte, Leonardo G.; Remiao, Mariana H.; Hartleben, Claudia P.; Moreira, Angela N.; Dellagostin, Odir A. [Universidade Federal de Pelotas, Nucleo de Biotecnologia, Centro de Desenvolvimento Tecnologico (Brazil); Piva, Evandro [Universidade Federal de Pelotas, Faculdade de Odontologia (Brazil); Conceicao, Fabricio R. [Universidade Federal de Pelotas, Nucleo de Biotecnologia, Centro de Desenvolvimento Tecnologico (Brazil); Carreno, Neftali L. V. [Universidade Federal de Pelotas, Engenharia de Materiais, Centro de Desenvolvimento Tecnologico (Brazil)

    2012-09-15

    Carbon nanostructures and nanocomposites display versatile allotropic morphologies, physico-chemical properties and have a wide range of applications in mechanics, electronics, biotechnology, structural material, chemical processing, and energy management. In this study we report the synthesis, characterization, and biotechnological application of cobalt magnetic nanoparticles, with diameter approximately 15-40 nm, embedded in carbon structure (Co/C-MN). A single-step chemical process was used in the synthesis of the Co/C-MN. The Co/C-MN has presented superparamagnetic behavior at room temperature an essential property for immunoseparation assays carried out here. To stimulate interactions between proteins and Co/C-MN, this nanocomposite was functionalized with acrylic acid (AA). We have showed the bonding of different proteins onto Co/C-AA surface using immunofluorescence assay. A Co/C-AA coated with monoclonal antibody anti-pathogenic Leptospira spp. was able to capture leptospires, suggesting that it could be useful in immunoseparation assays.

  9. Cobalt magnetic nanoparticles embedded in carbon matrix: biofunctional validation

    International Nuclear Information System (INIS)

    Krolow, Matheus Z.; Monte, Leonardo G.; Remião, Mariana H.; Hartleben, Cláudia P.; Moreira, Ângela N.; Dellagostin, Odir A.; Piva, Evandro; Conceição, Fabricio R.; Carreño, Neftalí L. V.

    2012-01-01

    Carbon nanostructures and nanocomposites display versatile allotropic morphologies, physico-chemical properties and have a wide range of applications in mechanics, electronics, biotechnology, structural material, chemical processing, and energy management. In this study we report the synthesis, characterization, and biotechnological application of cobalt magnetic nanoparticles, with diameter approximately 15–40 nm, embedded in carbon structure (Co/C-MN). A single-step chemical process was used in the synthesis of the Co/C-MN. The Co/C-MN has presented superparamagnetic behavior at room temperature an essential property for immunoseparation assays carried out here. To stimulate interactions between proteins and Co/C-MN, this nanocomposite was functionalized with acrylic acid (AA). We have showed the bonding of different proteins onto Co/C-AA surface using immunofluorescence assay. A Co/C-AA coated with monoclonal antibody anti-pathogenic Leptospira spp. was able to capture leptospires, suggesting that it could be useful in immunoseparation assays.

  10. Design Methodologies for Secure Embedded Systems

    CERN Document Server

    Biedermann, Alexander

    2011-01-01

    Embedded systems have been almost invisibly pervading our daily lives for several decades. They facilitate smooth operations in avionics, automotive electronics, or telecommunication. New problems arise by the increasing employment, interconnection, and communication of embedded systems in heterogeneous environments: How secure are these embedded systems against attacks or breakdowns? Therefore, how can embedded systems be designed to be more secure? And how can embedded systems autonomically react to threats? Facing these questions, Sorin A. Huss is significantly involved in the exploration o

  11. Certifiable Java for Embedded Systems

    DEFF Research Database (Denmark)

    Schoeberl, Martin; Dalsgaard, Andreas Engelbredt; Hansen, Rene Rydhof

    2014-01-01

    The Certifiable Java for Embedded Systems (CJ4ES) project aimed to develop a prototype development environment and platform for safety-critical software for embedded applications. There are three core constituents: A profile of the Java programming language that is tailored for safety......-critical applications, a predictable Java processor built with FPGA technology, and an Eclipse based application development environment that binds the profile and the platform together and provides analyses that help to provide evidence that can be used as part of a safety case. This paper summarizes key contributions...

  12. Morphware - Fremtidens Embedded System Platform

    DEFF Research Database (Denmark)

    Madsen, Jan

    2006-01-01

    FPGA'er bliver i stigende grad brugt som komponenter i embedded systemer. Faldende priser, større kapacitet og en større felksibilitet har gjort FPGA'en til en attraktiv og konkurrencedygtig teknologi der tillader en stadig stigende grad af system integration, hvor traditionel hardware og software...... kombineres og rekonfigureres. Muligheden for at rekonfigurere systemet, og specielt rekonfigurerer det medens det kører, giver nogle helt nye muligheder for at designe og programmere embedded systemer. Dette foredrag vil give et indblik i disse nye og fremtidige muligheder....

  13. Implementation of an embedded computer

    OpenAIRE

    Pikl, Bojan

    2011-01-01

    The goal of this thesis is to describe a production of an embedded computer. The thesis describes development and production of an embedded computer for the medical diode laser DL30 that is being developed in Robomed d.o.o.. The first part of the thesis describes the choice of hardware devices. I mostly describe the technologies that one can buy on the market. Moreover for every part of the computer installed and developed there is an argument why we selected that exact part. The second part ...

  14. Homogeneous Spaces and Equivariant Embeddings

    CERN Document Server

    Timashev, DA

    2011-01-01

    Homogeneous spaces of linear algebraic groups lie at the crossroads of algebraic geometry, theory of algebraic groups, classical projective and enumerative geometry, harmonic analysis, and representation theory. By standard reasons of algebraic geometry, in order to solve various problems on a homogeneous space it is natural and helpful to compactify it keeping track of the group action, i.e. to consider equivariant completions or, more generally, open embeddings of a given homogeneous space. Such equivariant embeddings are the subject of this book. We focus on classification of equivariant em

  15. A Foundation for Embedded Languages

    DEFF Research Database (Denmark)

    Rhiger, Morten

    2003-01-01

    Recent work on embedding object languages into Haskell use "phantom types" (i.e., parameterized types whose parameter does not occur on the right-hand side of the type definition) to ensure that the embedded object-language terms are simply typed. But is it a safe assumption that only simply......-typed terms can be represented in Haskell using phantom types? And conversely, can all simply-typed terms be represented in Haskell under the restrictions imposed by phantom types? In this article we investigate the conditions under which these assumptions are true: We show that these questions can...

  16. A Foundation for Embedded Languages

    DEFF Research Database (Denmark)

    Rhiger, Morten

    2002-01-01

    Recent work on embedding object languages into Haskell use "phantom types" (i.e., parameterized types whose parameter does not occur on the right-hand side of the type definition) to ensure that the embedded object-language terms are simply typed. But is it a safe assumption that only simply......-typed terms can be represented in Haskell using phantom types? And conversely, can all simply-typed terms be represented in Haskell under the restrictions imposed by phantom types? In this article we investigate the conditions under which these assumptions are true: We show that these questions can...

  17. Ferroelectric plasma source for heavy ion beam space charge neutralization

    International Nuclear Information System (INIS)

    Efthimion, Philip C.; Gilson, Erik P.; Davidson, Ronald C.; Grisham, Larry; Grant Logan, B.; Seidl, Peter A.; Waldron, William; Yu, Simon S.

    2007-01-01

    Plasmas are a source of unbound electrons for charge neutralizing intense heavy ion beams to allow them to focus to a small spot size and compress their axial pulse length. The plasma source should be able to operate at low neutral pressures and without strong externally applied electric or magnetic fields. To produce 1 m-long plasma columns, sources based upon ferroelectric ceramics with large dielectric coefficients are being developed. The sources utilize the ferroelectric ceramic BaTiO 3 to form metal plasma. The drift tube inner surface of the Neutralized Drift Compression Experiment (NDCX) will be covered with ceramic material, and high voltage (∼7 kV) will be applied between the drift tube and the front surface of the ceramics. A prototype ferroelectric source, 20 cm in length, has produced plasma densities of 5x10 11 cm -3 . It was integrated into the Neutralized Transport Experiment (NTX), and successfully charge neutralized the K + ion beam. A 1 m-long source comprised of five 20-cm-long sources has been tested. Simply connecting the five sources in parallel to a single pulse forming network power supply yielded non-uniform performance due to the time-dependent nature of the load that each of the five plasma sources experiences. Other circuit combinations have been considered, including powering each source by its own supply. The 1-m-long source has now been successfully characterized, producing relatively uniform plasma over the 1 m length of the source in the mid-10 10 cm -3 density range. This source will be integrated into the NDCX device for charge neutralization and beam compression experiments

  18. Enhanced performance of ferroelectric materials under hydrostatic pressure

    Science.gov (United States)

    Chauhan, Aditya; Patel, Satyanarayan; Wang, Shuai; Novak, Nikola; Xu, Bai-Xiang; Lv, Peng; Vaish, Rahul; Lynch, Christopher S.

    2017-12-01

    Mechanical confinement or restricted degrees of freedom have been explored for its potential to enhance the performance of ferroelectric devices. It presents an easy and reversible method to tune the response for specific applications. However, such studies have been mainly limited to uni- or bi-axial stress. This study investigates the effect of hydrostatic pressure on the ferroelectric behavior of bulk polycrystalline Pb0.99Nb0.02(Zr0.95Ti0.05)0.98O3. Polarization versus electric field hysteresis plots were generated as a function of hydrostatic pressure for a range of operating temperatures (298-398 K). The application of hydrostatic pressure was observed to induce anti-ferroelectric like double hysteresis loops. This in turn enhances the piezoelectric, energy storage, energy harvesting, and electrocaloric effects. The hydrostatic piezoelectric coefficient (dh) was increased from 50 pCN-1 (0 MPa) to ˜900 pC N-1 (265 MPa) and ˜3200 pCN-1 (330 MPa) at 298 K. Energy storage density was observed to improve by more than 4 times under pressure, in the whole temperature range. The relative change in entropy was also observed to shift from ˜0 to 4.8 J kg-1 K-1 under an applied pressure of 325 MPa. This behavior can be attributed to the evolution of pinched hysteresis loops that have been explained using a phenomenological model. All values represent an improvement of several hundred percent compared to unbiased performance, indicating the potential benefits of the proposed methodology.

  19. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    Energy Technology Data Exchange (ETDEWEB)

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  20. Development of “fragility” in relaxor ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi-zhen, E-mail: wangyizhen80@gmail.com [College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158 (China); Bioengineering Program and Mechanical Engineering and Mechanics Department, Lehigh University, 19 Memorial Drive West, Bethlehem, Pennsylvania 18015 (United States); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Chen, Lan; Xiong, Xiao-min; Zhang, Jin-xiu [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wang, Hai-yan [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Guangzhou Institute of Measurement and Testing Technology, Guangzhou 510663 (China); Frank Zhang, X. [Bioengineering Program and Mechanical Engineering and Mechanics Department, Lehigh University, 19 Memorial Drive West, Bethlehem, Pennsylvania 18015 (United States); Fu, Jun [College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158 (China)

    2014-02-07

    Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the “Super-Arrhenius (SA)” relaxation. Despite great progress in glass-forming liquids, the “fragility” property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-x%PbTiO{sub 3} (PMN − x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the “fragility” properties of the SA relaxation in PMN − x%PT. Such fascinating issues as the mechanism of the “fragility” at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between “fragility” and ferroelectric order are investigated. Our results show that both the “fragility” of the temperature-dependent SA relaxation and ferroelectric order in the PMN − x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature T{sub c}. A reasonable physical scenario, based on our “configurational-entropy-loss” theory and Nowick's “stress-induced-ordering” theory, was proposed.

  1. Development of “fragility” in relaxor ferroelectrics

    International Nuclear Information System (INIS)

    Wang, Yi-zhen; Chen, Lan; Xiong, Xiao-min; Zhang, Jin-xiu; Wang, Hai-yan; Frank Zhang, X.; Fu, Jun

    2014-01-01

    Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the “Super-Arrhenius (SA)” relaxation. Despite great progress in glass-forming liquids, the “fragility” property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg 1/3 Nb 2/3 )O 3 -x%PbTiO 3 (PMN − x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the “fragility” properties of the SA relaxation in PMN − x%PT. Such fascinating issues as the mechanism of the “fragility” at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between “fragility” and ferroelectric order are investigated. Our results show that both the “fragility” of the temperature-dependent SA relaxation and ferroelectric order in the PMN − x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature T c . A reasonable physical scenario, based on our “configurational-entropy-loss” theory and Nowick's “stress-induced-ordering” theory, was proposed

  2. Nanostructures for Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jarosław

    2016-01-01

    The experimental work in this thesis is focused on the fabrication of nanostructures that can be implemented in organic solar cell (OSC) architecture for enhancement of the device performance. Solar devices made from organic material are gaining increased attention, compared to their inorganic...... counterparts, due to the promising advantages, such as transparency, flexibility, ease of processing etc. But their efficiencies cannot be compared to the inorganic ones. Boosting the efficiency of OSCs by nanopatterning has thus been puzzling many researchers within the past years. Therefore various methods...... have been proposed to be used for developing efficient nanostructures for OSC devices such as, plasmonic structures, nanowires (NWs), gratings, nanorods etc. The nanostructuring methods applied though, do not offer the possibility of a cheap, rapid, reproducible and scalable fabrication. It is the aim...

  3. Nanostructuring of Solar Cell Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

  4. Quantum Nanostructures by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2009-02-01

    Full Text Available Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C. Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs could be realized. Potential applications of these quantum nanostructures are also discussed.

  5. Interfacing nanostructures to biological cells

    Science.gov (United States)

    Chen, Xing; Bertozzi, Carolyn R.; Zettl, Alexander K.

    2012-09-04

    Disclosed herein are methods and materials by which nanostructures such as carbon nanotubes, nanorods, etc. are bound to lectins and/or polysaccharides and prepared for administration to cells. Also disclosed are complexes comprising glycosylated nanostructures, which bind selectively to cells expressing glycosylated surface molecules recognized by the lectin. Exemplified is a complex comprising a carbon nanotube functionalized with a lipid-like alkane, linked to a polymer bearing repeated .alpha.-N-acetylgalactosamine sugar groups. This complex is shown to selectively adhere to the surface of living cells, without toxicity. In the exemplified embodiment, adherence is mediated by a multivalent lectin, which binds both to the cells and the .alpha.-N-acetylgalactosamine groups on the nanostructure.

  6. PREFACE: Self-organized nanostructures

    Science.gov (United States)

    Rousset, Sylvie; Ortega, Enrique

    2006-04-01

    In order to fabricate ordered arrays of nanostructures, two different strategies might be considered. The `top-down' approach consists of pushing the limit of lithography techniques down to the nanometre scale. However, beyond 10 nm lithography techniques will inevitably face major intrinsic limitations. An alternative method for elaborating ultimate-size nanostructures is based on the reverse `bottom-up' approach, i.e. building up nanostructures (and eventually assemble them to form functional circuits) from individual atoms or molecules. Scanning probe microscopies, including scanning tunnelling microscopy (STM) invented in 1982, have made it possible to create (and visualize) individual structures atom by atom. However, such individual atomic manipulation is not suitable for industrial applications. Self-assembly or self-organization of nanostructures on solid surfaces is a bottom-up approach that allows one to fabricate and assemble nanostructure arrays in a one-step process. For applications, such as high density magnetic storage, self-assembly appears to be the simplest alternative to lithography for massive, parallel fabrication of nanostructure arrays with regular sizes and spacings. These are also necessary for investigating the physical properties of individual nanostructures by means of averaging techniques, i.e. all those using light or particle beams. The state-of-the-art and the current developments in the field of self-organization and physical properties of assembled nanostructures are reviewed in this issue of Journal of Physics: Condensed Matter. The papers have been selected from among the invited and oral presentations of the recent summer workshop held in Cargese (Corsica, France, 17-23 July 2005). All authors are world-renowned in the field. The workshop has been funded by the Marie Curie Actions: Marie Curie Conferences and Training Courses series named `NanosciencesTech' supported by the VI Framework Programme of the European Community, by

  7. Zinc stannate nanostructures: hydrothermal synthesis

    International Nuclear Information System (INIS)

    Baruah, Sunandan; Dutta, Joydeep

    2011-01-01

    Nanostructured binary semiconducting metal oxides have received much attention in the last decade owing to their unique properties rendering them suitable for a wide range of applications. In the quest to further improve the physical and chemical properties, an interest in ternary complex oxides has become noticeable in recent times. Zinc stannate or zinc tin oxide (ZTO) is a class of ternary oxides that are known for their stable properties under extreme conditions, higher electron mobility compared to its binary counterparts and other interesting optical properties. The material is thus ideal for applications from solar cells and sensors to photocatalysts. Among the different methods of synthesizing ZTO nanostructures, the hydrothermal method is an attractive green process that is carried out at low temperatures. In this review, we summarize the conditions leading to the growth of different ZTO nanostructures using the hydrothermal method and delve into a few of its applications reported in the literature. (topical review)

  8. Nanostructures for protein drug delivery.

    Science.gov (United States)

    Pachioni-Vasconcelos, Juliana de Almeida; Lopes, André Moreni; Apolinário, Alexsandra Conceição; Valenzuela-Oses, Johanna Karina; Costa, Juliana Souza Ribeiro; Nascimento, Laura de Oliveira; Pessoa, Adalberto; Barbosa, Leandro Ramos Souza; Rangel-Yagui, Carlota de Oliveira

    2016-02-01

    Use of nanoscale devices as carriers for drugs and imaging agents has been extensively investigated and successful examples can already be found in therapy. In parallel, recombinant DNA technology together with molecular biology has opened up numerous possibilities for the large-scale production of many proteins of pharmaceutical interest, reflecting in the exponentially growing number of drugs of biotechnological origin. When we consider protein drugs, however, there are specific criteria to take into account to select adequate nanostructured systems as drug carriers. In this review, we highlight the main features, advantages, drawbacks and recent developments of nanostructures for protein encapsulation, such as nanoemulsions, liposomes, polymersomes, single-protein nanocapsules and hydrogel nanoparticles. We also discuss the importance of nanoparticle stabilization, as well as future opportunities and challenges in nanostructures for protein drug delivery.

  9. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  10. Enhanced ductility in thermally sprayed titania coating synthesized using a nanostructured feedstock

    International Nuclear Information System (INIS)

    Lima, R.S.; Marple, B.R.

    2005-01-01

    Nanostructured and conventional titania (TiO 2 ) feedstock powders were thermally sprayed via high velocity oxy-fuel (HVOF). The microstructure, porosity, Vickers hardness, crack propagation resistance, bond strength (ASTM C633), abrasion behavior (ASTM G65) and the wear scar characteristics of these two types of coatings were analyzed and compared. The coating made from the nanostructured feedstock exhibited a bimodal microstructure, with regions containing particles that were fully molten (conventional matrix) and regions with embedded particles that were semi-molten (nanostructured zones) during the thermal spraying process. The bimodal coating also exhibited higher bond strength and higher wear resistance when compared to the conventional coating. By comparing the wear scars of both coatings (via scanning electron microscopy and roughness measurements) it was observed that when the coatings were subjected to the same abrasive conditions the wear scar of the bimodal coating was smoother, with more plastically deformed regions than the conventional coating. It was concluded that this enhanced ductility of the bimodal coating was caused by its higher toughness. The results suggest that nanostructured zones randomly distributed in the microstructure of the bimodal coating act as crack arresters, thereby enhancing toughness and promoting higher critical depth of cut, which provides a broader plastic deformation range than that exhibited by the conventional coating. This work provides evidence that the enhanced ductility of the bimodal coating is a nanostructured-related property, not caused by any other microstructural artifact

  11. Domain shape instabilities and dendrite domain growth in uniaxial ferroelectrics

    Science.gov (United States)

    Shur, Vladimir Ya.; Akhmatkhanov, Andrey R.

    2018-01-01

    The effects of domain wall shape instabilities and the formation of nanodomains in front of moving walls obtained in various uniaxial ferroelectrics are discussed. Special attention is paid to the formation of self-assembled nanoscale and dendrite domain structures under highly non-equilibrium switching conditions. All obtained results are considered in the framework of the unified kinetic approach to domain structure evolution based on the analogy with first-order phase transformation. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  12. Processing, microstructure and properties of grain-oriented ferroelectric ceramics

    International Nuclear Information System (INIS)

    Okazaki, K.; Igarashi, H.; Nagata, K.; Yamamoto, T.; Tashiro, S.

    1986-01-01

    Grain oriented ferroelectric ceramics such as PbBi/sub 2/Nb/sub 2/O/sub 9/, bismuth compound with layer structure, (PbLa)Nb/sub 2/O/sub 6/, tungsten-bronze structure and SbSI were prepared by an uni-axial hot-pressing, a double-stage hot-pressing and tape casting methods. Microstructures of them were examined by SEM and the prefered textures of the ceramics composed of thin plate and/or needle crystallites were ascertained. Grain orientation effects on electrical, piezoelectric, optical and mechanical properties are discussed

  13. Characterisation of ferroelectric bulk materials and thin films

    CERN Document Server

    Cain, Markys G

    2014-01-01

    This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and - most importantly - relevant and applicable measurement and characterisation methods and models. In the past f

  14. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  15. Ferroelectric memories: A possible answer to the hardened nonvolatile question

    International Nuclear Information System (INIS)

    Messenger, G.C.; Coppage, F.N.

    1988-01-01

    Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI (Very Large-Scale Integration) manufacturing techniques which are basically nonvolatile and radiation hard. The memory can be made NDRO (Nondestructive Readout) for strategic systems using several techniques; the most practical is probably a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems

  16. Structural studies of different types of ferroelectric liquid crystalline substances

    Czech Academy of Sciences Publication Activity Database

    Obadović, D.Ž.; Stojanović, M.; Bubnov, Alexej; Éber, N.; Cvetinov, M.; Vajda, A.

    2011-01-01

    Roč. 35, č. 1 (2011), s. 3-13 ISSN 1450-7404 R&D Projects: GA AV ČR IAA100100911; GA AV ČR(CZ) GA202/09/0047; GA ČR(CZ) GAP204/11/0723 Grant - others:RFASI(RU) 02.740.11.5166 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectric liquid crystals * phase transition * structure of liquid crystalline phases * molecular parameters Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Photoinduced Domain Pattern Transformation in Ferroelectric-Dielectric Superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Youngjun; Park, Joonkyu; Pateras, Anastasios; Rich, Matthew B.; Zhang, Qingteng; Chen, Pice; Yusuf, Mohammed H.; Wen, Haidan; Dawber, Matthew; Evans, Paul G.

    2017-07-01

    The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. The reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.

  18. Mean-field theory for a ferroelectric transition

    International Nuclear Information System (INIS)

    Dobry, A.; Greco, A.; Stachiotti, M.

    1990-01-01

    For the treatment of anharmonic models of solids presenting structural transitions, a commonly used approximation is that of self-consistent phonons. Rather than the usual site decoupling, this mean-field theory is based on decoupling of modes in reciprocal space. A self-consistent phonon approximation for the non-linear polarizability model is developed in this work. The model describes the dynamical properties of ferroelectric materials. Phase diagrams as a function of relevant model parameters are presented. An analysis is made of critical behaviour and it is shown that the approximation leads to the same anomalies found in other models. (Author). 9 refs., 3 figs

  19. Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

    Science.gov (United States)

    Hunt, Mitchell; Sayyah, Rana; MacLeod, Todd C.; Ho, Fat D.

    2011-01-01

    In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

  20. Ferroelectric fluoride compositions and methods of making and using same

    Science.gov (United States)

    Halasyamani, P Shiv; Chang, Hong-Young

    2015-04-07

    A method for synthesis of a ferroelectric material characterized by the general formula A.sub.xB.sub.yF.sub.z where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

  1. Vortex ice in nanostructured superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Reichhardt, Charles [Los Alamos National Laboratory; Reichhardt, Cynthia J [Los Alamos National Laboratory; Libal, Andras J [Los Alamos National Laboratory

    2008-01-01

    We demonstrate using numerical simulations of nanostructured superconductors that it is possible to realize vortex ice states that are analogous to square and kagome ice. The system can be brought into a state that obeys either global or local ice rules by applying an external current according to an annealing protocol. We explore the breakdown of the ice rules due to disorder in the nanostructure array and show that in square ice, topological defects appear along grain boundaries, while in kagome ice, individual defects appear. We argue that the vortex system offers significant advantages over other artificial ice systems.

  2. Embedding Sensors During Additive Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Sbriglia, Lexey Raylene [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-08-10

    This PowerPoint presentation had the following headings: Fused deposition modeling (FDM); Open source 3D printing; Objectives; Vibration analysis; Equipment; Design; Material choices; Failure causes, such as tension, bubbling; Potential solutions; Simulations; Embedding the sensors; LabView programming; Alternate data acquisition; Problem and proposed solution; and, Conclusions

  3. Embedded EZ-Source Inverters

    DEFF Research Database (Denmark)

    Blaabjerg, Frede; Loh, Poh Chiang; Gao, F.

    2008-01-01

    -voltage oscillations to the system. Therefore, Z-source inverters are in effect safer and less complex, and can be implemented using only passive elements with no additional active semiconductor needed. Believing in the prospects of Z-source inverters, this paper contributes by introducing a new family of embedded EZ...

  4. Software for Embedded Control Systems

    NARCIS (Netherlands)

    Broenink, Johannes F.; Hilderink, G.H.; Jovanovic, D.S.

    2001-01-01

    The research of our team deals with the realization of control schemes on digital computers. As such the emphasis is on embedded control software implementation. Applications are in the field of mechatronic devices, using a mechatronic design approach (the integrated and optimal design of a

  5. Proceedings of the 8th International Symposium on Applications of Ferroelectrics

    Science.gov (United States)

    Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

    1993-02-01

    The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

  6. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

    2017-09-13

    The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

  7. Embedded, everywhere: a research agenda for networked systems of embedded computers

    National Research Council Canada - National Science Library

    Committee on Networked Systems of Embedded Computers; National Research Council Staff; Division on Engineering and Physical Sciences; Computer Science and Telecommunications Board; National Academy of Sciences

    2001-01-01

    .... Embedded, Everywhere explores the potential of networked systems of embedded computers and the research challenges arising from embedding computation and communications technology into a wide variety of applicationsâ...

  8. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    Science.gov (United States)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  9. Acoustic emission during the ferroelectric transition Pm3{sup ¯}m to P4mm in BaTiO{sub 3} and the ferroelastic transition R3{sup ¯}m-C2/c in Pb{sub 3}(PO{sub 4}){sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Salje, E. K. H. [Department of Earth Sciences, University of Cambridge, Cambridge CB2 3EQ (United Kingdom); Dul' kin, E.; Roth, M. [Department of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2015-04-13

    Acoustic emission (AE) spectroscopy without frequency filtering (∼broadband AE) and moderate time integration is shown to be sensitive enough to allow the investigation of subtle nano-structural changes in ferroelectric BaTiO{sub 3} and ferroelastic Pb{sub 3}(PO{sub 4}){sub 2}. AE signals during weak phase transitions are compatible with avalanche statistics as observed previously in large-strain systems. While the data are too sparse to determine avalanche exponents, they are well suited to determine other thermodynamic parameters such as transition temperatures and critical stresses.

  10. Effects of criticality and disorder on piezoelectric properties of ferroelectrics

    International Nuclear Information System (INIS)

    Porta, Marcel; Lookman, Turab; Saxena, Avadh

    2010-01-01

    The piezoelectric response of BaTiO 3 is studied in the vicinity of the cubic to tetragonal phase transition, as a function of temperature and the applied electric field in the polar direction. We also investigate the influence of disorder. In the clean limit we obtain the divergence of the piezoelectric tensor at the critical point. The effect of a small amount of disorder is to translate the critical point in the temperature-electric field phase diagram. For large values of the disorder, the paraelectric to ferroelectric phase transition becomes diffuse but a maximum of the piezoelectric tensor is still obtained even though the divergence of the piezoelectric response is lost. These results are in agreement with experimental observations for the relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 . We use a Ginzburg-Landau model which explicitly includes the coupling of the polarization to the strain, the electrostatic interaction between polarizations, and a quenched random compressional stress field generated by point defects. The strain field and its associated elastic energy are written in terms of the stress field and the electric polarization by energy minimization subject to elastic compatibility.

  11. Enhanced electrical properties in bilayered ferroelectric thin films

    Science.gov (United States)

    Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

    2013-03-01

    Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

  12. Giant flexoelectric polarization in a micromachined ferroelectric diaphragm

    KAUST Repository

    Wang, Zhihong

    2012-08-14

    The coupling between dielectric polarization and strain gradient, known as flexoelectricity, becomes significantly large on the micro- and nanoscale. Here, it is shown that giant flexoelectric polarization can reverse remnant ferroelectric polarization in a bent Pb(Zr0.52Ti0.48) O3 (PZT) diaphragm fabricated by micromachining. The polarization induced by the strain gradient and the switching behaviors of the polarization in response to an external electric field are investigated by observing the electromechanical coupling of the diaphragm. The method allows determination of the absolute zero polarization state in a PZT film, which is impossible using other existing methods. Based on the observation of the absolute zero polarization state and the assumption that bending of the diaphragm is the only source of the self-polarization, the upper bound of flexoelectric coefficient of PZT film is calculated to be as large as 2.0 × 10-4 C m -1. The strain gradient induced by bending the diaphragm is measured to be on the order of 102 m-1, three orders of magnitude larger than that obtained in the bulk material. Because of this large strain gradient, the estimated giant flexoelectric polarization in the bent diaphragm is on the same order of magnitude as the normal remnant ferroelectric polarization of PZT film. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Characterization of current transport in ferroelectric polymer devices

    KAUST Repository

    Hanna, Amir

    2014-01-01

    We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.

  14. Ferroelectricity by Bose-Einstein condensation in a quantum magnet.

    Science.gov (United States)

    Kimura, S; Kakihata, K; Sawada, Y; Watanabe, K; Matsumoto, M; Hagiwara, M; Tanaka, H

    2016-09-26

    The Bose-Einstein condensation is a fascinating phenomenon, which results from quantum statistics for identical particles with an integer spin. Surprising properties, such as superfluidity, vortex quantization or Josephson effect, appear owing to the macroscopic quantum coherence, which spontaneously develops in Bose-Einstein condensates. Realization of Bose-Einstein condensation is not restricted in fluids like liquid helium, a superconducting phase of paired electrons in a metal and laser-cooled dilute alkali atoms. Bosonic quasi-particles like exciton-polariton and magnon in solids-state systems can also undergo Bose-Einstein condensation in certain conditions. Here, we report that the quantum coherence in Bose-Einstein condensate of the magnon quasi particles yields spontaneous electric polarization in the quantum magnet TlCuCl 3 , leading to remarkable magnetoelectric effect. Very soft ferroelectricity is realized as a consequence of the O(2) symmetry breaking by magnon Bose-Einstein condensation. The finding of this ferroelectricity will open a new window to explore multi-functionality of quantum magnets.

  15. Computer Code for Nanostructure Simulation

    Science.gov (United States)

    Filikhin, Igor; Vlahovic, Branislav

    2009-01-01

    Due to their small size, nanostructures can have stress and thermal gradients that are larger than any macroscopic analogue. These gradients can lead to specific regions that are susceptible to failure via processes such as plastic deformation by dislocation emission, chemical debonding, and interfacial alloying. A program has been developed that rigorously simulates and predicts optoelectronic properties of nanostructures of virtually any geometrical complexity and material composition. It can be used in simulations of energy level structure, wave functions, density of states of spatially configured phonon-coupled electrons, excitons in quantum dots, quantum rings, quantum ring complexes, and more. The code can be used to calculate stress distributions and thermal transport properties for a variety of nanostructures and interfaces, transport and scattering at nanoscale interfaces and surfaces under various stress states, and alloy compositional gradients. The code allows users to perform modeling of charge transport processes through quantum-dot (QD) arrays as functions of inter-dot distance, array order versus disorder, QD orientation, shape, size, and chemical composition for applications in photovoltaics and physical properties of QD-based biochemical sensors. The code can be used to study the hot exciton formation/relation dynamics in arrays of QDs of different shapes and sizes at different temperatures. It also can be used to understand the relation among the deposition parameters and inherent stresses, strain deformation, heat flow, and failure of nanostructures.

  16. Thermoelectric effects in magnetic nanostructures

    NARCIS (Netherlands)

    Hatami, Moosa; Bauer, Gerrit E.W.; Zhang, Q.F.; Kelly, Paul J.

    2009-01-01

    We model and evaluate the Peltier and Seebeck effects in magnetic multilayer nanostructures by a finite-element theory of thermoelectric properties. We present analytical expressions for the thermopower and the current-induced temperature changes due to Peltier cooling/heating. The thermopower of a

  17. Noncollinear magnetism in manganese nanostructures

    Czech Academy of Sciences Publication Activity Database

    Zelený, Martin; Šob, Mojmír; Hafner, J.

    2009-01-01

    Roč. 80, č. 14 (2009), 144414/1-144414/19 ISSN 1098-0121 R&D Projects: GA AV ČR IAA100100920; GA MŠk OC09011 Institutional research plan: CEZ:AV0Z20410507 Keywords : magnetism of nanostructures * nanowires * noncollinear magnetism * manganese Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009

  18. The application of nonlinear dynamics in the study of ferroelectric materials

    International Nuclear Information System (INIS)

    Blochwitz, S.; Habel, R.; Diestelhorst, M.; Beige, H.

    1996-01-01

    It is well known that the structural phase transitions in ferroelectric materials are connected with strong nonlinear properties. So we can expect all features of nonlinear dynamical systems such as period-doubling cascades and chaos in a dynamical system that contains ferroelectric materials. Therefore we can apply nonlinear dynamics to these ferroelectric materials and we are doing it in two directions: (i) We study the structural phase transitions by analyzing the large signal behaviour with means of nonlinear dynamics. (ii) We control the chaotic behaviour of the system with the method proposed by Ott, Grebogi and Yorke. (authors)

  19. Frontiers of ferroelectricity a special issue of the journal of materials science

    CERN Document Server

    Lang, Sidney B

    2007-01-01

    The book presents theory, fundamentals and some applications of ferroelectricy. The 24 chapters comprise reviews and research reports covering the spectrum of ferroelectricity. It is intended to describe the current levels of understanding of various aspects of ferroelectricity as presented by authorities in the field. Topics include relaxors, piezoelectrics, microscale and nanoscale studies, polymers and composites, unusual properties, and techniques and devices. The information in this book is intended for physicists, engineers and materials scientists working with ferroelectric materials including ceramics, single crystals, polymers, composites and even some biological materials.

  20. Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

    Science.gov (United States)

    Maslovskaya, A. G.; Barabash, T. K.

    2018-03-01

    The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.