Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Science.gov (United States)

Goel, Ekta; Singh, Balraj; Kumar, Sanjay; Singh, Kunal; Jit, Satyabrata

2017-04-01

Two dimensional threshold voltage model of ion-implanted strained-Si double-material double-gate MOSFETs has been done based on the solution of two dimensional Poisson's equation in the channel region using the parabolic approximation method. Novelty of the proposed device structure lies in the amalgamation of the advantages of both the strained-Si channel and double-material double-gate structure with a vertical Gaussian-like doping profile. The effects of different device parameters (such as device channel length, gate length ratios, germanium mole fraction) and doping parameters (such as projected range, straggle parameter) on threshold voltage of the proposed structure have been investigated. It is observed that the subthreshold performance of the device can be improved by simply controlling the doping parameters while maintaining other device parameters constant. The modeling results show a good agreement with the numerical simulation data obtained by using ATLAS™, a 2D device simulator from SILVACO.

New technique of skin embedded wire double-sided laser beam welding

Science.gov (United States)

Han, Bing; Tao, Wang; Chen, Yanbin

2017-06-01

In the aircraft industry, double-sided laser beam welding is an approved method for producing skin-stringer T-joints on aircraft fuselage panels. As for the welding of new generation aluminum-lithium alloys, however, this technique is limited because of high hot cracking susceptibility and strengthening elements' uneven distributions within weld. In the present study, a new technique of skin embedded wire double-sided laser beam welding (LBW) has been developed to fabricate T-joints consisting of 2.0 mm thick 2060-T8/2099-T83 aluminum-lithium alloys using eutectic alloy AA4047 filler wire. Necessary dimension parameters of the novel groove were reasonably designed for achieving crack-free welds. Comparisons were made between the new technique welded T-joint and conventional T-joint mainly on microstructure, hot crack, elements distribution features and mechanical properties within weld. Excellent crack-free microstructure, uniform distribution of silicon and superior tensile properties within weld were found in the new skin embedded wire double-sided LBW T-joints.

Unified double- and single-sided homogeneous Green’s function representations

Science.gov (United States)

van der Neut, Joost; Slob, Evert

2016-01-01

In wave theory, the homogeneous Green’s function consists of the impulse response to a point source, minus its time-reversal. It can be represented by a closed boundary integral. In many practical situations, the closed boundary integral needs to be approximated by an open boundary integral because the medium of interest is often accessible from one side only. The inherent approximations are acceptable as long as the effects of multiple scattering are negligible. However, in case of strongly inhomogeneous media, the effects of multiple scattering can be severe. We derive double- and single-sided homogeneous Green’s function representations. The single-sided representation applies to situations where the medium can be accessed from one side only. It correctly handles multiple scattering. It employs a focusing function instead of the backward propagating Green’s function in the classical (double-sided) representation. When reflection measurements are available at the accessible boundary of the medium, the focusing function can be retrieved from these measurements. Throughout the paper, we use a unified notation which applies to acoustic, quantum-mechanical, electromagnetic and elastodynamic waves. We foresee many interesting applications of the unified single-sided homogeneous Green’s function representation in holographic imaging and inverse scattering, time-reversed wave field propagation and interferometric Green’s function retrieval. PMID:27436983

Double-sided FoxFET biased microstrip detectors

International Nuclear Information System (INIS)

Allport, P.P.; Carter, J.R.; Dunwoody, U.C.; Gibson, V.; Goodrick, M.J.; Beck, G.A.; Carter, A.A.; Martin, A.J.; Pritchard, T.W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Wilburn, C.D.

1994-01-01

The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microvertex detector. The detector has proved very successful, with ladders of three single-sided detectors showing signal/noise of 22 : 1 with MX5 readout electronics [P.P. Allport et al., Nucl. Instr. and Meth. A 324 (1993) 34; Nucl. Phys. B (Proc. Suppl.) 32 (1993) 208]. This technique has been extended to bias also the n + strips and p strips on the ohmic side of a double-sided detector [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Full-size detectors with orthogonal readout have been fabricated by Micron and tested with MX7 readout on both sides. Both the junction and ohmic sides of these detectors have similar signal/noise values to those for single-sided wafers [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Test structures have been irradiated with beta particles to study the radiation hardness of the devices, and probe station electrical measurements of the detectors and test structures are presented. ((orig.))

Study of Pneumatic Servo Loading System in Double-Sided Polishing

International Nuclear Information System (INIS)

Qian, N; Ruan, J; Li, W

2006-01-01

The precise double-sided polishing process is one of the main methods to get the ultra-smooth surface of workpiece. In double-sided polishing machine, a loading system is required to be able to precisely control the load superimposed on the workpiece, while the polishing is being carried out. A pneumatic servo loading system is proposed for this purpose. In the pneumatic servo system, the servo valve, which acts both the electrical to mechanical converter and the power amplifier, has a substantial influence on the performance of the loading system. Therefore a specially designed pneumatic digital servo valve is applied in the control system. In this paper, the construction of the pneumatic servo loading system in double-sided polishing machine and control strategy associated with the digital servo valve are first addressed. The mathematical model of the system established and the hardware of the pneumatic servo system is designed. Finally, the experiments are carried out by measuring the practical load on the workpiece and the quality of the surface finish. It is demonstrated that the error rate of load is less than 5% and a super-smooth surface of silicon wafer with roughness Ra 0.401 nm can be obtained

Design and fabrication of a double-sided piezoelectric transducer for harvesting vibration power

Energy Technology Data Exchange (ETDEWEB)

Chang, Wei-Tsai; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Kao, Kuo-Sheng [Department of Computer and Communication, Shu-Te University, Kaohsiung, Taiwan, ROC (China); Chu, Yu-Hsien [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Cheng, Chien-Chuan, E-mail: chengccc@dlit.edu.tw [Department of Electronic Engineering, De Lin Institute of Technology, Taipei, Taiwan, ROC (China)

2013-02-01

This investigation examines a means of integrating high-performance ZnO piezoelectric thin films with a flexible stainless steel substrate (SUS304) to fabricate a double-sided piezoelectric transducer for vibration-energy harvesting applications. The double-sided piezoelectric transducer is constructed by depositing ZnO piezoelectric thin films on both the front and the back sides of the SUS304 substrate. The titanium and platinum layers were deposited using a dual-gun DC sputtering system between the ZnO piezoelectric thin film and the back side of the SUS304 substrate. The scanning electron microscopy and X-ray diffraction of ZnO piezoelectric films reveal a rigid surface structure and a highly c-axis-preferring orientation. To fabricate a transducer with a low resonant frequency, a tip-mass of 0.5 g and a vibration-area of 1 cm{sup 2} are designed, based on the cantilever vibration theory. The maximum open circuit voltage of the power transducer is approximately 18 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.31 μW/cm{sup 2} is obtained from the transducers with a load resistance of 6 MΩ. The variation of the power output of ± 0.001% is obtained after 24-hour continuous test. - Highlights: ► A double-sided piezoelectric transducer is fabricated with the ZnO thin films. ► Vibrated frequency of a double-sided transducer is designed and presented. ► A maximum output power of 3.23 μW/cm{sup 2} is obtained under turbulent vibration.

Magnetic field sensor based on double-sided polished fibre-Bragg gratings

International Nuclear Information System (INIS)

Tien, Chuen-Lin; Hwang, Chang-Chou; Liu, Wen-Feng; Chen, Hong-Wei

2009-01-01

A new magnetic field sensor based on double-sided polished fibre-Bragg gratings (FBGs) coated with an iron thin film for measuring magnetic flux density was experimentally demonstrated with the sensitivity of 25.6 nm T −1 . The sensing mechanism is based on the Bragg wavelength shift as the magnetic field is measured by the proposed sensing head. Results of this study present the intensity of the reflected optical signal as a function of the applied strain on the FBG. This paper shows that an improved method for sensing the wavelength shift with changes in external magnetic field is developed by use of the double-sided polished FBGs

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

Science.gov (United States)

Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

2018-06-01

Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

CERN Document Server

Adriani, O

1997-01-01

We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

Regulating Effect of Asymmetrical Impeller on the Flow Distributions of Double-sided Centrifugal Compressor

Science.gov (United States)

Yang, Ce; Liu, Yixiong; Yang, Dengfeng; Wang, Benjiang

2017-11-01

To achieve the rebalance of flow distributions of double-sided impellers, a method of improving the radius of rear impeller is presented in this paper. It is found that the flow distributions of front and rear impeller can be adjusted effectively by increasing the radius of rear impeller, thus improves the balance of flow distributions of front and rear impeller. Meanwhile, the working conversion mode process of double-sided centrifugal compressor is also changed. Further analysis shows that the flowrates of blade channels in front impeller are mainly influenced by the circumferential distributions of static pressure in the volute. But the flowrates of rear impeller blade channels are influenced by the outlet flow field of bent duct besides the effects of static pressure distributions in the volute. In the airflow interaction area downstream, the flowrate of blade channel is obviously smaller. By increasing the radius of rear impeller, the work capacity of rear impeller is enhanced, the working mode conversion process from parallel working mode of double-sided impeller to the single impeller working mode is delayed, and the stable working range of double-sided compressor is broadened.

Characterization procedures for double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

1995-08-15

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

Characterization procedures for double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

1995-01-01

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

New developments in double sided silicon strip detectors

International Nuclear Information System (INIS)

Becker, H.; Boulos, T.; Cattaneo, P.; Dietl, H.; Hauff, D.; Holl, P.; Lange, E.; Lutz, G.; Moser, H.G.; Schwarz, A.S.; Settles, R.; Struder, L.; Kemmer, J.; Buttler, W.

1990-01-01

A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given

Heat transfer modeling of double-side arc welding

International Nuclear Information System (INIS)

Sun Junsheng; Wu Chuansong

2002-01-01

If a plasma arc and a TIG arc are connected in serial and with the plasma arc placed on the obverse side and the TIG arc on the opposite side of the workpiece, a special double-side arc welding (DSAW) system will be formed, in which the PAW current is forced to flow through the keyhole along the thickness direction so as to compensate the energy consumed for melting the workpiece and improve the penetration capacity of the PAW arc. By considering the mechanics factors which influence the DSAW pool geometric shape, the control equations of the pool surface deformation are derived, and the mathematics mode for DSAW heat transfer is established by using boundary-fitted non-orthogonal coordinate systems. With this model, the difference between DSAW and PAW heat transfer is analyzed and the reason for the increase of DSAW penetration is explained from the point of heat transfer. The welding process experiments show that calculated results are in good agreement with measured ones

Performance of a beam telescope using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Fischer, P.; Menke, S.; Wermes, N.

1995-04-01

A beam telescope consisting of four double sided, DC coupled microstrip detectors with VLSI readout electronics has been built and tested in a 70 GeV μ - beam at CERN. A signal to noise ratio of 53:1 and a spatial resolution of 2.7 μm (junction side) and 4.8 μm (ohmic side) have been observed on the best detectors. A telescope performance for a particle track of σ xy =2-3 μm and σ slope =2-3 μrad on the front face of a test object was achieved. (orig.)

Electrolytic in process dressing (ELID) applied to double side grinding of ceramic materials

Science.gov (United States)

Spanu, Cristian E.

The objective of the present work is to design, optimize, and validate an electrolytic in-process dressing (ELID)-assisted double side grinding process for finishing advanced ceramic components. To attain this objective, an original ELID double side grinding system was designed, fabricated, and operated at Precision Micro-Machining Center at The University of Toledo, Ohio. The ELID technique was selected from among other options to assure the in-situ dressing of the metal-bonded superabrasive grinding wheel and to maintain its cutting ability throughout the operation, which is, otherwise, a challenging enterprise. Optimizing the ELID double side grinding process parameters is an important goal of the present study. To achieve this goal, a complex integrated model was developed and validated through extensive experimental testing. Four analytical computerized models were developed and integrated: (1) an improved kinematic model of double side grinding accounting for workpiece rotation, which is used to simulate the grinding trajectories; (2) a microscopic model of the interaction between a single diamond grit and the work surface, which is used to predict the volume of material removed; (3) a stochastic model for the topographical characterization of the superabrasive wheel, which leads to a new prediction method of depth of indentation; and (4) an electrolytic oxidation model, which explains the dynamics of the oxide layer. In order to validate the models and to confirm the optimized process, experimental tests were conducted under different conditions: with vitrified and metallic bond grinding wheels, with various average grain sizes of diamond grits, with different superabrasive concentrations, with different grinding fluids, with and without ELID assistance. Our findings show that an optimized ceramic double side grinding process using fine diamond grit is more efficient than lapping in producing very fine surfaces. The experiments confirmed the superiority of

Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lee, Benjamin G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nemeth, William M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); LaSalvia, Vincenzo A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2018-03-14

The rear side metallization of Si solar cells comes with a number of inherent losses and trade-offs: a larger metallized area fraction improves fill factor at the expense of open-circuit voltage, depositing directly on textured Si leads to low contact resistivity at the expense of short-circuit current, and some metallization processes create defects in Si. To mitigate many of these losses we have developed a novel approach for rear side metallization of Si solar cells, utilizing a transparent conducting adhesive (TCA) to metallize Si without exposing the wafer to the metal deposition process. The TCA consists of an insulating adhesive loaded with conductive microspheres. This approach leads to virtually no loss in implied open-circuit voltage upon metallization. Electrical measurements showed that contact resistivities of 3-9 ..omega.. cm2 were achieved, and an analysis of the transit resistance per microsphere showed that less than 1 ..omega.. cm2 should be achievable with higher microsphere loading of the TCA.

Scintigraphic diagnosis of silent aspiration following double-sided lung transplantation

International Nuclear Information System (INIS)

Toenshoff, G.; Stock, U.; Bohuslavizki, K.H.; Brenner, W.; Costard-Jaeckle, A.; Cremer, J.; Clausen, M.

1996-01-01

We present a case of a 25 year old patient who underwent double-sided lung transplantation and suffered from recurrent pneumonia. Silent aspiration was suspected clinically. Aspiration was proved by scintigraphy enabling to discriminate between direct oro-pulmonal aspiration and aspiration after gastro-esophageal reflux. (orig.) [de

Pull-in instability of paddle-type and double-sided NEMS sensors under the accelerating force

Science.gov (United States)

Keivani, M.; Khorsandi, J.; Mokhtari, J.; Kanani, A.; Abadian, N.; Abadyan, M.

2016-02-01

Paddle-type and double-sided nanostructures are potential for use as accelerometers in flying vehicles and aerospace applications. Herein the pull-in instability of the cantilever paddle-type and double-sided sensors in the Casimir regime are investigated under the acceleration. The D'Alembert principle is employed to transform the accelerating system into an equivalent static system by incorporating the accelerating force. Based on the couple stress theory (CST), the size-dependent constitutive equations of the sensors are derived. The governing nonlinear equations are solved by two approaches, i.e. modified variational iteration method and finite difference method. The influences of the Casimir force, geometrical parameters, acceleration and the size phenomenon on the instability performance have been demonstrated. The obtained results are beneficial to design and fabricate paddle-type and double-sided accelerometers.

Double-sided anodic titania nanotube arrays: a lopsided growth process.

Science.gov (United States)

Sun, Lidong; Zhang, Sam; Sun, Xiao Wei; Wang, Xiaoyan; Cai, Yanli

2010-12-07

In the past decade, the pore diameter of anodic titania nanotubes was reported to be influenced by a number of factors in organic electrolyte, for example, applied potential, working distance, water content, and temperature. All these were closely related to potential drop in the organic electrolyte. In this work, the essential role of electric field originating from the potential drop was directly revealed for the first time using a simple two-electrode anodizing method. Anodic titania nanotube arrays were grown simultaneously at both sides of a titanium foil, with tube length being longer at the front side than that at the back side. This lopsided growth was attributed to the higher ionic flux induced by electric field at the front side. Accordingly, the nanotube length was further tailored to be comparable at both sides by modulating the electric field. These results are promising to be used in parallel configuration dye-sensitized solar cells, water splitting, and gas sensors, as a result of high surface area produced by the double-sided architecture.

Double muscle innervation using end-to-side neurorrhaphy in rats

Directory of Open Access Journals (Sweden)

Elisangela Jeronymo Stipp-Brambilla

Full Text Available CONTEXT AND OBJECTIVE: One of the techniques used for treating facial paralysis is double muscle innervation using end-to-end neurorrhaphy with sectioning of healthy nerves. The aim of this study was to evaluate whether double muscle innervation by means of end-to-side neurorrhaphy could occur, with maintenance of muscle innervation. DESIGN AND SETTING: Experimental study developed at the Experimental Research Center, Faculdade de Medicina de Botucatu, Unesp. METHODS: One hundred rats were allocated to five groups as follows: G1, control group; G2, the peroneal nerve was sectioned; G3, the tibial nerve was transected and the proximal stump was end-to-side sutured to the intact peroneal nerve; G4, 120 days after the G3 surgery, the peroneal nerve was sectioned proximally to the neurorrhaphy; G5, 120 days after the G3 surgery, the peroneal and tibial nerves were sectioned proximally to the neurorrhaphy. RESULTS: One hundred and fifty days after the surgery, G3 did not show any change in tibial muscle weight or muscle fiber diameter, but the axonal fiber diameter in the peroneal nerve distal to the neurorrhaphy had decreased. Although G4 showed atrophy of the cranial tibial muscle 30 days after sectioning the peroneal nerve, the electrophysiological test results and axonal diameter measurement confirmed that muscle reinnervation had occurred. CONCLUSION: These findings suggest that double muscle innervation did not occur through end-to-side neurorrhaphy; the tibial nerve was not able to maintain muscle innervation after the peroneal nerve had been sectioned, although muscle reinnervation was found to have occurred, 30 days after the peroneal nerve had been sectioned.

Displacement and resonance behaviors of a piezoelectric diaphragm driven by a double-sided spiral electrode

KAUST Repository

Shen, Zhiyuan

2012-04-03

This paper presents the design of a lead zirconate titanate (PZT) diaphragm actuated by double-sided patterned electrodes. Au/Cr electrodes were deposited on bulk PZT wafers by sputtering while patterned by a lift-off process. SU-8 thick film was used to form the structural layer. Double-spiral electrode induced in-plane poling and piezoelectric elongation are converted to an out-of-plane displacement due to the confined boundary condition. The influence of different drive configurations and electrode parameters on deflection has been calculated by finite element methods (FEM) using a uniform field model. Impedance and quasi-static displacement spectra of the diaphragm were measured after poling. Adouble-sided patterned electrode diaphragm can be actuated by more drive configurations than a single-sided one. Compared with a single-sided electrode drive, a double-sided out-of-phase drive configuration increases the coupling coefficient of the fundamental resonance from 7.6% to 11.8%. The displacement response of the diaphragm increases from 2.6 to 8.6nmV 1. Configurations including the electric field component perpendicular to the poling direction can stimulate shear modes of the diaphragm. © 2012 IOP Publishing Ltd.

Ab initio study of the Si(CH3)2O double free radical under external electric field

International Nuclear Information System (INIS)

Chen Xiaojun; Luo Sunzhong; Jiang Shubing; Huang Wei; Gao Xiaoling; Ma Meizhong; Zhu Zhenghe

2004-01-01

Infrared spectrum and NMR chemical shifts of Si(CH 3 ) 2 O double free radical were calculated employing density functional theory (DFT) with the basis sets 6-311 + G(2d, p). Excited states, dipole moment and energy of Si(CH 3 ) 2 O double free radical were also calculated using time dependent density function theory (TD-DFT) with the same basis sets. It is found that the external electric field along the X, Y and Z axis affect differently on the excited states and other properties of Si(CH 3 ) 2 O double free radical. (author)

Double side electroplating for applying beta voltaic with sandwich structure

International Nuclear Information System (INIS)

Choi, Sang Moo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Kim, Jin Joo; Park, Jong Han

2015-01-01

As a result, a variety of nuclear-based small-scale power sources have been developed with varying degrees of success and maturity. A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amperes, is generated in devices. The difference of the short circuit current between the pre-deposition and post deposition of Ni-63 was found to be 5 nA. This value is very low to apply device junction. To fabricate betavoltaic, Ni-63 should be coated on the double side of substrate. The bath was primarily composed of 0.2 M Ni ions, prepared by dissolving Ni metal particles in HCl. The prototype for electroplating radioactive Ni-63 on double side has been established

Double side electroplating for applying beta voltaic with sandwich structure

Energy Technology Data Exchange (ETDEWEB)

Choi, Sang Moo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Kim, Jin Joo; Park, Jong Han [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

As a result, a variety of nuclear-based small-scale power sources have been developed with varying degrees of success and maturity. A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amperes, is generated in devices. The difference of the short circuit current between the pre-deposition and post deposition of Ni-63 was found to be 5 nA. This value is very low to apply device junction. To fabricate betavoltaic, Ni-63 should be coated on the double side of substrate. The bath was primarily composed of 0.2 M Ni ions, prepared by dissolving Ni metal particles in HCl. The prototype for electroplating radioactive Ni-63 on double side has been established.

Charge correlation measurements of double-sided direct-coupled silicon mirostrip detectors

International Nuclear Information System (INIS)

Wood, M.L.; Kuehler, J.F.; Kalbfleisch, G.R.; Kaplan, D.H.; Skubic, P.; Lucas, A.D.; Wilburn, C.D.

1991-01-01

Charge correlation measurements of several Micron 38 mm by 58 mm by 300 micron thick double-sided DC-coupled microstripe detectors have been made. They have been bench tested with a Sr-90 source, with the detectors operated at -22C. The correlation of the charges collected from both the diode ('holes') and the ohmic ('electrons') stripes are equal within a signal to noise resolution of 20:1 (i.e., 1,200 electrons noise) using common-mode subtracted double-correlated sampling with the Berkeley SVXD readout chip

Numerical analysis of urine flow through the side holes of a double J stent in a ureteral stenosis.

Science.gov (United States)

Kim, Hyoung-Ho; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Kyung-Wuk; Suh, Sang-Ho

2017-07-20

Ureteral stenosis presents with a narrowing in the ureter, due to an intrinsic or extrinsic ureteral disease, such as ureter cancer or retroperitoneal fibrosis. The placement of a double J stent in the upper urinary system is one of the most common treatments of ureteral stenosis, along with the insertion of a percutaneous nephrostomy tube into the renal pelvis. The effect that the side holes in a double J stent have on urine flow has been evaluated in a few studies using straight ureter models. In this study, urine flow through a double J stent's side holes was analyzed in curved ureter models, which were based on human anatomy. In ureteral stenosis, especially in severe ureteral stenosis, a stent with side holes had a positive effect on the luminal and total flow rates, compared with the rates for a stent without side holes. The more side holes a stent has, the greater the luminal and total flow rates. However, the angular positions of the side holes did not affect flow rate. In conclusion, the side holes in a double J stent had a positive effect on ureteral stenosis, and the effect became greater as the ureteral stenosis became more severe.

Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

Directory of Open Access Journals (Sweden)

Minghua Li

2013-01-01

Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

siRNA-like double-stranded RNAs are specifically protected against degradation in human cell extract.

Directory of Open Access Journals (Sweden)

John A H Hoerter

Full Text Available RNA interference (RNAi is a set of intracellular pathways in eukaryotes that controls both exogenous and endogenous gene expression. The power of RNAi to knock down (silence any gene of interest by the introduction of synthetic small-interfering (siRNAs has afforded powerful insight into biological function through reverse genetic approaches and has borne a new field of gene therapeutics. A number of questions are outstanding concerning the potency of siRNAs, necessitating an understanding of how short double-stranded RNAs are processed by the cell. Recent work suggests unmodified siRNAs are protected in the intracellular environment, although the mechanism of protection still remains unclear. We have developed a set of doubly-fluorophore labeled RNAs (more precisely, RNA/DNA chimeras to probe in real-time the stability of siRNAs and related molecules by fluorescence resonance energy transfer (FRET. We find that these RNA probes are substrates for relevant cellular degradative processes, including the RNase H1 mediated degradation of an DNA/RNA hybrid and Dicer-mediated cleavage of a 24-nucleotide (per strand double-stranded RNA. In addition, we find that 21- and 24-nucleotide double-stranded RNAs are relatively protected in human cytosolic cell extract, but less so in blood serum, whereas an 18-nucleotide double-stranded RNA is less protected in both fluids. These results suggest that RNAi effector RNAs are specifically protected in the cellular environment and may provide an explanation for recent results showing that unmodified siRNAs in cells persist intact for extended periods of time.

Silicon solar cell technology state of the art and a proposed double sided cell

International Nuclear Information System (INIS)

Seddik, M.M.

1987-08-01

A review of the silicon technology state of the art is given. It had been found that single crystal silicon efficiency was limitd to ≥ 20%. The reason was identified to be due to the recombination current loss mechanisms. However, use of new technologies such as back-surface field, surface passivation, double anti-reflection coatings and back-surface illumination demonstrated to achieve higher efficiencies. Experiments were carried out to evaluate the effect of back surfaces illumination on the cell efficiency enhancement. It was found that for single cell, back-surface illumination contribute a 12% increase in efficiency whereas for double cell illumination (back-to-back cells) the improvement was 59% increase in efficiency. A V-shaped flat mirror reflector with optimum angle of 45 deg. to the plane of the cell from both sides achieved the ultimate efficiency performance. Finally, a proposed high current - high efficiency solar cell called ''Double Drift'' - Double Sided Illumination Cell'' was presented. The new structures were in the form of n + pn + or p + np + double junctions. The expected efficiency ranges 50-60% with proper material design, double anti-reflection coatings and V-shaped irregular plane mirror reflector illumination. (author). 43 refs, 4 figs, 7 tabs

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

Investigation based on nano-electromechanical system double Si3N4 resonant beam pressure sensor.

Science.gov (United States)

Yang, Chuan; Guo, Can; Yuan, Xiaowei

2011-12-01

This paper presents a type of NEMS (Nano-Electromechanical System) double Si3N4 resonant beams pressure sensor. The mathematical models are established in allusion to the Si3N4 resonant beams and pressure sensitive diaphragm. The distribution state of stress has been analyzed theoretically based on the mathematical model of pressure sensitive diaphragm; from the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm was optimized and then the dominance observed after the double resonant beams are adopted is illustrated. From the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm is optimized, illustrating advantages in the adoption of double resonant beams. The capability of the optimized sensor was generally analyzed using the ANSYS software of finite element analysis. The range of measured pressure is 0-400 Kpa, the coefficient of linearity correlation is 0.99346, and the sensitivity of the sensor is 498.24 Hz/Kpa, higher than the traditional sensors. Finally the processing techniques of the sensor chip have been designed with sample being successfully processed.

A facile electrode preparation method for accurate electrochemical measurements of double-side-coated electrode from commercial Li-ion batteries

Science.gov (United States)

Zhou, Ge; Wang, Qiyu; Wang, Shuo; Ling, Shigang; Zheng, Jieyun; Yu, Xiqian; Li, Hong

2018-04-01

The post mortem electrochemical analysis, including charge-discharge and electrochemical impedance spectroscopy (EIS) measurements, are critical steps for revealing the failure mechanisms of commercial lithium-ion batteries (LIBs). These post measurements usually require the reassembling of coin-cell with electrode which is often double-side-coated in commercial LIBs. It is difficult to use such double-side-coated electrode to perform accurate electrochemical measurements because the back side of the electrode is coated with active materials, rather than single-side-coated electrode that is often used in coin-cell measurements. In this study, we report a facile tape-covering sample preparation method, which can effectively suppress the influence of back side of the double-side-coated electrodes on capacity and EIS measurements in coin-cells. By tape-covering the unwanted side, the areal capacity of the desired investigated side of the electrode has been accurately measured with an experimental error of about 0.5% at various current densities, and accurate EIS measurements and analysis have been conducted as well.

Monolithic Composite “Pressure + Acceleration + Temperature + Infrared” Sensor Using a Versatile Single-Sided “SiN/Poly-Si/Al” Process-Module

Directory of Open Access Journals (Sweden)

Xinxin Li

2013-01-01

Full Text Available We report a newly developed design/fabrication module with low-cost single-sided “low-stress-silicon-nitride (LS-SiN/polysilicon (poly-Si/Al” process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first “pressure + acceleration + temperature + infrared” (PATIR composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage, a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a −3 dB bandwidth of 780 Hz, a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W and a thermistor (−25–120 °C. This design/fabrication module concept enables a low-cost monolithically-integrated “multifunctional-library” technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments.

A novel sandwich differential capacitive accelerometer with symmetrical double-sided serpentine beam-mass structure

International Nuclear Information System (INIS)

Xiao, D B; Li, Q S; Hou, Z Q; Wang, X H; Chen, Z H; Xia, D W; Wu, X Z

2016-01-01

This paper presents a novel differential capacitive silicon micro-accelerometer with symmetrical double-sided serpentine beam-mass sensing structure and glass–silicon–glass sandwich structure. The symmetrical double-sided serpentine beam-mass sensing structure is fabricated with a novel pre-buried mask fabrication technology, which is convenient for manufacturing multi-layer sensors. The glass–silicon–glass sandwich structure is realized by a double anodic bonding process. To solve the problem of the difficulty of leading out signals from the top and bottom layer simultaneously in the sandwich sensors, a silicon pillar structure is designed that is inherently simple and low-cost. The prototype is fabricated and tested. It has low noise performance (the peak to peak value is 40 μg) and μg-level Allan deviation of bias (2.2 μg in 1 h), experimentally demonstrating the effectiveness of the design and the novel fabrication technology. (paper)

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

Cross-talk studies on FPCB of double-sided silicon micro-strip detector

International Nuclear Information System (INIS)

Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

2014-01-01

Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

Numerical analysis of the effect of side holes of a double J stent on flow rate and pattern.

Science.gov (United States)

Kim, Kyung-Wuk; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Hyoung-Ho; Suh, Sang-Ho

2015-01-01

A double J stent has been used widely these days for patients with a ureteral stenosis or with renal stones and lithotripsy. The stent has multiple side holes in the shaft, which supply detours for urine flow. Even though medical companies produce various forms of double J stents that have different numbers and positions of side holes in the stent, the function of side holes in fluid dynamics has not been studied well. Here, the flow rate and pattern around the side holes of a double J stent were evaluated in curved models of a stented ureter based on the human anatomy and straight models for comparison. The total flow rate was higher in the stent with a greater number of side holes. The inflow and outflow to the stent through the side holes in the curved ureter was more active than in the straight ureter, which means the flow through side holes exists even in the ureter without ureteral stenosis or occlusion and even in the straight ureter. When the diameter of the ureter changed, the in-stent flow rate in the ureter did not change and the extraluminal flow rate was higher in the ureter with a greater diameter.

Double-sided auction mechanism design in electricity based on maximizing social welfare

International Nuclear Information System (INIS)

Zou Xiaoyan

2009-01-01

An efficient electricity double-sided auction mechanism should control market power and enhance the social welfare of the electricity market. Based on this goal, the paper designs a new double-sided auction mechanism. In the new mechanism, the social welfare contribution of each participant plays a pivotal role, because this contribution is the critical factor in market clearing, payment settling, and transaction matching rules. In particular, each winner of the auction can gain transfer payments according to his contribution to social welfare in the electricity market, and this gives the mechanism the ability to control the market power of some participants. At the same time, this mechanism ensures that the market organizer balances his budget. We then conduct a theoretical and empirical analysis based on the Spanish electricity market. Both of the results show that compared to the uniform-pricing mechanism, the new mechanism can reduce market power of participants and enhance the social welfare of the electricity market.

Development and basic photovoltaic characteristics of a solar generator with double-sided silicon cells

International Nuclear Information System (INIS)

Aliev, R.; Mansurov, Kh.

2015-01-01

A new solar generator consisting of double-sided silicon sensing elements is described. The basic photovoltaic parameters of solar generators are made of mono- and polycrystalline silicon solar cells. (author)

The dominant role of side chains in supramolecular double helical organisation in synthetic tripeptides

Science.gov (United States)

Sharma, Ankita; Tiwari, Priyanka; Dutt Konar, Anita

2018-06-01

Peptide self-assembled nanostructures have attracted attention recently owing to their promising applications in diversified avenues. To validate the importance of sidechains in supramolecular architectural stabilization, herein this report describes the self-assembly propensities involving weak interactions in a series of model tripeptides Boc-Xaa-Aib-Yaa-OMe I-IV, (where Xaa = 4-F-Phe/NMeSer/Ile & Yaa = Tyr in peptide I-III respectively and Xaa = 4-F-Phe & Yaa = Ile in peptide IV) differing in terminal side chains. The solid state structural analysis reveals that tripeptide (I) displays supramolecular preference for double helical architecture. However, when slight modification has been introduced in the N-terminal side chains disfavour the double helical organisation (Peptide II and III). Indeed the peptides display sheet like ensemble within the framework. Besides replacement of C-terminal Tyr by Ile in peptide I even do not promote the architecture, emphasizing the dominant role of balance of side chains in stabilizing double helical organisation. The CD measurements, concentration dependant studies, NMR titrations and ROESY spectra are well in agreement with the solid state conformational investigation. Moreover the morphological experiments utilizing FE-SEM, support the heterogeneity present in the peptides. Thus this work may not only hold future promise in understanding the structure and function of neurodegenerative diseases but also assist in rational design of protein modification in biologically active peptides.

Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

Science.gov (United States)

Bao, Meng-tian; Wang, Ying

2017-02-01

In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nonlinear stability research on the hydraulic system of double-side rolling shear

Science.gov (United States)

Wang, Jun; Huang, Qingxue; An, Gaocheng; Qi, Qisong; Sun, Binyu

2015-10-01

This paper researches the stability of the nonlinear system taking the hydraulic system of double-side rolling shear as an example. The hydraulic system of double-side rolling shear uses unsymmetrical electro-hydraulic proportional servo valve to control the cylinder with single piston rod, which can make best use of the space and reduce reversing shock. It is a typical nonlinear structure. The nonlinear state-space equations of the unsymmetrical valve controlling cylinder system are built first, and the second Lyapunov method is used to evaluate its stability. Second, the software AMEsim is applied to simulate the nonlinear system, and the results indicate that the system is stable. At last, the experimental results show that the system unsymmetrical valve controlling the cylinder with single piston rod is stable and conforms to what is deduced by theoretical analysis and simulation. The construction and application of Lyapunov function not only provide the theoretical basis for using of unsymmetrical valve controlling cylinder with single piston rod but also develop a new thought for nonlinear stability evaluation.

Cell force mapping using a double-sided micropillar array based on the moiré fringe method

Science.gov (United States)

Zhang, F.; Anderson, S.; Zheng, X.; Roberts, E.; Qiu, Y.; Liao, R.; Zhang, X.

2014-07-01

The mapping of traction forces is crucial to understanding the means by which cells regulate their behavior and physiological function to adapt to and communicate with their local microenvironment. To this end, polymeric micropillar arrays have been used for measuring cell traction force. However, the small scale of the micropillar deflections induced by cell traction forces results in highly inefficient force analyses using conventional optical approaches; in many cases, cell forces may be below the limits of detection achieved using conventional microscopy. To address these limitations, the moiré phenomenon has been leveraged as a visualization tool for cell force mapping due to its inherent magnification effect and capacity for whole-field force measurements. This Letter reports an optomechanical cell force sensor, namely, a double-sided micropillar array (DMPA) made of poly(dimethylsiloxane), on which one side is employed to support cultured living cells while the opposing side serves as a reference pattern for generating moiré patterns. The distance between the two sides, which is a crucial parameter influencing moiré pattern contrast, is predetermined during fabrication using theoretical calculations based on the Talbot effect that aim to optimize contrast. Herein, double-sided micropillar arrays were validated by mapping mouse embryo fibroblast contraction forces and the resulting force maps compared to conventional microscopy image analyses as the reference standard. The DMPA-based approach precludes the requirement for aligning two independent periodic substrates, improves moiré contrast, and enables efficient moiré pattern generation. Furthermore, the double-sided structure readily allows for the integration of moiré-based cell force mapping into microfabricated cell culture environments or lab-on-a-chip devices.

Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

International Nuclear Information System (INIS)

Kacha, K.; Djeffal, F.; Ferhati, H.; Arar, D.; Meguellati, M.

2015-01-01

We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. (paper)

Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

2016-09-15

The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Directory of Open Access Journals (Sweden)

Jiongjiong Mo

2017-01-01

Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

Double-Sided Externalities and Vertical Contracting : Evidence from European Franchising Data

OpenAIRE

Magali Chaudey; Muriel Fadairo

2009-01-01

This paper deals with contractual design and vertical relationships within a franchise chain, in the field of the literature on share contracts. Within a double-sided moral hazard, the contract sharing the profit generated by the vertical decentralized structure results from the necessity to incite both the franchisee and the franchisor. This paper takes into account the five franchisor incentive mechanisms in order to study the chosen type of vertical coordination in different contexts. Usin...

Investigation of InGaN/Si double junction tandem solar cells | Bouzid ...

African Journals Online (AJOL)

In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell ...

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

DEFF Research Database (Denmark)

Hu, Yongjie; Churchill, Hugh; Reilly, David

2007-01-01

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...

Nonlinear electron acoustic structures generated on the high-potential side of a double layer

Directory of Open Access Journals (Sweden)

R. Pottelette

2009-04-01

Full Text Available High-time resolution measurements of the electron distribution function performed in the auroral upward current region reveals a large asymmetry between the low- and high-potential sides of a double-layer. The latter side is characterized by a large enhancement of a locally trapped electron population which corresponds to a significant part (~up to 30% of the total electron density. As compared to the background hot electron population, this trapped component has a very cold temperature in the direction parallel to the static magnetic field. Accordingly, the differential drift between the trapped and background hot electron populations generates high frequency electron acoustic waves in a direction quasi-parallel to the magnetic field. The density of the trapped electron population can be deduced from the frequency where the electron acoustic spectrum maximizes. In the auroral midcavity region, the electron acoustic waves may be modulated by an additional turbulence generated in the ion acoustic range thanks to the presence of a pre-accelerated ion beam located on the high-potential side of the double layer. Electron holes characterized by bipolar pulses in the electric field are sometimes detected in correlation with these electron acoustic wave packets.

Double-sided laser beam welded T-joints for aluminum-lithium alloy aircraft fuselage panels: Effects of filler elements on microstructure and mechanical properties

Science.gov (United States)

Han, Bing; Tao, Wang; Chen, Yanbin; Li, Hao

2017-08-01

In the current work, T-joints consisting of 2.0 mm thick 2060-T8/2099-T83 aluminum-lithium alloys for aircraft fuselage panels have been fabricated by double-sided fiber laser beam welding with different filler wires. A new type wire CW3 (Al-6.2Cu-5.4Si) was studied and compared with conventional wire AA4047 (Al-12Si) mainly on microstructure and mechanical properties. It was found that the main combined function of Al-6.2%Cu-5.4%Si in CW3 resulted in considerable improvements especially on intergranular strength, hot cracking susceptibility and hoop tensile properties. Typical non-dendritic equiaxed zone (EQZ) was observed along welds' fusion boundary. Hot cracks and fractures during the load were always located within the EQZ, however, this typical zone could be restrained by CW3, effectively. Furthermore, changing of the main intergranular precipitated phase within the EQZ from T phase by AA4047 to T2 phase by CW3 also resulted in developments on microscopic intergranular reinforcement and macroscopic hoop tensile properties. In addition, bridging caused by richer substructure dendrites within CW3 weld's columnar zone resulted in much lower hot cracking susceptibility of the whole weld than AA4047.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

Energy Technology Data Exchange (ETDEWEB)

Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2013-12-21

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

International Nuclear Information System (INIS)

Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

2013-01-01

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

A micro-structured Si-based electrodes for high capacity electrical double layer capacitors

International Nuclear Information System (INIS)

Krikscikas, Valdas; Oguchi, Hiroyuki; Hara, Motoaki; Kuwano, Hiroki; Yanazawa, Hiroshi

2014-01-01

We challenged to make basis for Si electrodes of electric double layer capacitors (EDLC) used as a power source of micro-sensor nodes. Mcroelectromechanical systems (MEMS) processes were successfully introduced to fabricate micro-structured Si-based electrodes to obtain high surface area which leads to high capacity of EDLCs. Study of fundamental properties revealed that the microstructured electrodes benefit from good wettability to electrolytes, but suffer from electric resistance. We found that this problem can be solved by metal-coating of the electrode surface. Finally we build an EDLC consisting of Au-coated micro-structured Si electrodes. This EDLC showed capacity of 14.3 mF/cm 2 , which is about 530 times larger than that of an EDLC consisting of flat Au electrodes

Switching Device Dead Time Optimization of Resonant Double-Sided LCC Wireless Charging System for Electric Vehicles

Directory of Open Access Journals (Sweden)

Xi Zhang

2017-11-01

Full Text Available Aiming at the reduction of the influence of the dead time setting on power level and efficiency of the inverter of double-sided LCC resonant wireless power transfer (WPT system, a dead time soft switching optimization method for metal–oxide–semiconductor field-effect transistor (MOSFET is proposed. At first, the mathematic description of double-sided LCC resonant wireless charging system is established, and the operating mode is analyzed as well, deducing the quantitative characteristic that the secondary side compensation capacitor C2 can be adjusted to ensure that the circuit is inductive. A dead time optimization design method is proposed, contributing to achieving zero-voltage switching (ZVS of the inverter, which is closely related to the performance of the WPT system. In the end, a prototype is built. The experimental results verify that dead time calculated by this optimized method can ensure the soft switching of the inverter MOSFET and promote the power and efficiency of the WPT.

Reflective acquaintance with other minds and the double-sided disclosure of the lived-body

DEFF Research Database (Denmark)

Farley, Adam

2014-01-01

This paper will consider the phenomenological disclosure of the reflecting-body vis-à-vis subject’s reflective acquaintance with other minds. To this end, phenomenological accounts regarding the double-sided disclosure of the lived-body will be expounded and developed. It will be argued...... be admitted across these modes. To this end, observations regarding the lived disclosure of reflective acts vis-à-vis their embodied conduct are provided; suggesting that a partial inversion of the lived-body’s double-sidedness occurs during the transition to the reflective mode. Directions for future...

Expansion of lower-frequency locally resonant band gaps using a double-sided stubbed composite phononic crystals plate with composite stubs

Energy Technology Data Exchange (ETDEWEB)

Li, Suobin; Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Li, Yinggang [Key Laboratory of High Performance Ship Technology of Ministry of Education, Wuhan University of Technology, Wuhan, 430070 (China); Chen, Weihua [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

2016-06-03

We studied the expansion of locally resonant complete band gaps in two-dimensional phononic crystals (PCs) using a double-sided stubbed composite PC plate with composite stubs. Results show that the introduction of the proposed structure gives rise to a significant expansion of the relative bandwidth by a factor of 1.5 and decreases the opening location of the first complete band gap by a factor of 3 compared to the classic double-sided stubbed PC plate with composite stubs. Furthermore, more band gaps appear in the lower-frequency range (0.006). These phenomena can be attributed to the strong coupling between the “analogous rigid mode” of the stub and the anti-symmetric Lamb modes of the plate. The “analogous rigid mode” of the stub is produced by strengthening the localized resonance effect of the composite plates through the double-sided stubs, and is further strengthened through the introduction of composite stubs. The “analogous rigid mode” of the stubs expands the out-of-plane band gap, which overlaps with in-plane band gap in the lower-frequency range. As a result, the complete band gap is expanded and more complete band gaps appear. - Highlights: • Expansion of lower-frequency locally resonant BGs using novel composite phononic crystals plates. • The proposed structure expands the relative bandwidth 1.5 times compared to classic doubled-sided stubbed PC plates. • The opening location of the first complete BG decreases 3 times compared to the classic doubled-sided stubbed PC plates. • The concept “analogous rigid mode” is put forward to explain the expansion of lower-frequency BGs.

Simulation studies of the n{sup +}n{sup -} Si sensors having p-spray/p-stop implant for the SiD experiment

Energy Technology Data Exchange (ETDEWEB)

Saxena, Pooja; Ranjan, Kirti [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhardwaj, Ashutosh, E-mail: abhardwaj@physics.du.ac.in [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Shivpuri, R.K.; Bhattacharya, Satyaki [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2011-12-01

Silicon Detector (SiD) is one of the proposed detectors for the future International Linear Collider (ILC). In the innermost vertex of the ILC, Si micro-strip sensors will be exposed to the neutron background of around 1-1.6 Multiplication-Sign 10{sup 10} 1 MeV equivalent neutrons cm{sup -2} year{sup -1}. The p{sup +}n{sup -}n{sup +} double-sided Si strip sensors are supposed to be used as position sensitive sensors for SiD. The shortening due to electron accumulation on the n{sup +}n{sup -} side of these sensors leads to uniform spreading of signal over all the n{sup +} strips and thus ensuring good isolation between the n{sup +} strips becomes one of the major issues in these sensors. One of the possible solutions is the use of floating p-type implants introduced between the n{sup +} strips (p-stops) and another alternative is the use of uniform layer of p-type implant on the entire n-side (p-spray). However, pre-breakdown micro-discharge is reported because of the high electric field at the edge of the p-stop/p-spray. An optimization of the implant dose profile of the p-stop and p-spray is required to achieve good electrical isolation while ensuring satisfactory breakdown performance of the Si sensors. Preliminary results of the simulation study performed on the n{sup +}n{sup -} Si sensors having p-stop and p-spray using device simulation program, ATLAS, are presented.

A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

2013-01-01

In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

Displacement and resonance behaviors of a piezoelectric diaphragm driven by a double-sided spiral electrode

KAUST Repository

Shen, Zhiyuan; Olfatnia, Mohammad; Miao, Jianmin; Wang, Zhihong

2012-01-01

This paper presents the design of a lead zirconate titanate (PZT) diaphragm actuated by double-sided patterned electrodes. Au/Cr electrodes were deposited on bulk PZT wafers by sputtering while patterned by a lift-off process. SU-8 thick film

A new double sided linear switched reluctance motor with low cost

International Nuclear Information System (INIS)

Daldaban, Ferhat; Ustkoyuncu, Nurettin

2006-01-01

This paper presents the realization and design of a new linear switched reluctance motor (LSRM) structure. The new model has double sided configuration and provides high force for many applications with low cost. The characteristics of the LSRM are obtained by using finite element analysis (FEA) and analytical calculations. The results of the FEA and analytical calculations are presented, and compared with experimental results. A high correlation between experimental and analytical results is obtained, which has been demonstrated in the form of inductance versus position versus current

Direct observation for atomically flat and ordered vertical {111} side-surfaces on three-dimensionally figured Si(110) substrate using scanning tunneling microscopy

Science.gov (United States)

Yang, Haoyu; Hattori, Azusa N.; Ohata, Akinori; Takemoto, Shohei; Hattori, Ken; Daimon, Hiroshi; Tanaka, Hidekazu

2017-11-01

A three-dimensional Si{111} vertical side-surface structure on a Si(110) wafer was fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing treatments. The side-surface was studied with scanning tunneling microscopy (STM) in atomic scale for the first time, in addition to atomic force microscopy (AFM), scanning electron microscopy (SEM), and low-energy electron diffraction (LEED). AFM and SEM showed flat and smooth vertical side-surfaces without scallops, and STM proved the realization of an atomically-flat 7 × 7-reconstructed structure, under optimized RIE and wet-etching conditions. STM also showed that a step-bunching occurred on the produced {111} side-surface corresponding to a reversely taped side-surface with a tilt angle of a few degrees, but did not show disordered structures. Characteristic LEED patterns from both side- and top-reconstructed surfaces were also demonstrated.

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Development of double-sided silicon strip detectors (DSSD) for a Compton telescope

International Nuclear Information System (INIS)

Takeda, Shin'ichiro; Watanabe, Shin; Tanaka, Takaaki; Nakazawa, Kazuhiro; Takahashi, Tadayuki; Fukazawa, Yasushi; Yasuda, Hajimu; Tajima, Hiroyasu; Kuroda, Yoshikatsu; Onishi, Mitsunobu; Genba, Kei

2007-01-01

The low noise double-sided silicon strip detector (DSSD) technology is used to construct a next generation Compton telescope which is required to have both high-energy resolution and high-Compton reconstruction efficiency. In this paper, we present the result of a newly designed stacked DSSD module with high-energy resolution in highly packed mechanical structure. The system is designed to obtain good P-side and N-side noise performance by means of DC-coupled read-out. Since there are no decoupling capacitors in front-end electronics before the read-out ASICs, a high density stacked module with a pitch of 2 mm can be constructed. By using a prototype with four-layer of DSSDs with an area of 2.56cmx2.56cm, we have succeeded to operate the system. The energy resolution at 59.5 keV is measured to be 1.6 keV (FWHM) for the P-side and 2.8 keV (FWHM) for the N-side, respectively. In addition to the DSSD used in the prototype, a 4 cm wide DSSD with a thickness of 300μm is also developed. With this device, an energy resolution of 1.5 keV (FWHM) was obtained. A method to model the detector energy response to properly handle split events is also discussed

Side-effects in ascending cervical myelography using iopamidol and metrizamide - a double blind study

International Nuclear Information System (INIS)

Bockenheimer, S.; Eichenlaub, H.

1986-01-01

A double blind study was performed to examine the side-effects of Metrizamide (group 1) and of Jopamidol (group 2) in ascending cervical myelography. Both groups were compared to a control group (group 3) comprising patients who had undergone lumbar puncture only. EEG was taken of the patients in groups 1 and 2 before as well as 6 and 24 h after intervention. Side-effects were collected by means of a questionnaire. Response time, concentration, memory and mood were examined psychometrically. Training effects or defensive attitudes in the multiple test examinations were checked against another control group of patients (group 4) which had no myelographic nor lumbar-puncture-induced impairment. Statistical findings corroborated our clinical impression that side-effects occurred after Metrizamide administration at a more than simply random rate. (orig.) [de

Power module packaging with double sided planar interconnection and heat exchangers

Science.gov (United States)

Liang, Zhenxian; Marlino, Laura D.; Ning, Puqi; Wang, Fei

2015-05-26

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Phase retrieval from reflective fringe patterns of double-sided transparent objects

International Nuclear Information System (INIS)

Huang, Lei; Asundi, Anand Krishna

2012-01-01

‘Ghosted’ fringe patterns simultaneously reflected from both the upper and lower sides of a transparent target in the fringe reflection technique are captured for transparent surface 3D shape measurement, but the phase retrieval from the captured ‘ghosted’ fringe patterns is still not solved. A novel method is proposed to solve this issue by using two sets of phase-shifted fringe patterns with slightly different frequencies. The nonlinear least-squares method is used to estimate the fringe phase and modulation from both front and rear interfaces. Several simulations are done to show the feasibility of the proposed method. The influence of fringe noise on the algorithm is studied as well, which indicates that the proposed method is able to retrieve the phase from double-sided reflective fringe patterns with fringe noise equivalent to that in practical measurements. The merits and limitations of the method are discussed and recommendations for future studies are made. (paper)

Analysis and Design of Double-sided Air core Linear Servo Motor with Trapezoidal Permanent Magnets

DEFF Research Database (Denmark)

Zhang, Yuqiu; Yang, Zilong; Yu, Minghu

2011-01-01

In order to reduce the thrust ripple of linear servo system, a double-sided air core permanent magnet linear servo motor with trapezoidal shape permanent magnets (TDAPMLSM) is proposed in this paper. An analytical model of the motor for predicting the magnetic field in the air-gap at no...

A double sided silicon strip detector as a DRAGON end detector

CERN Document Server

Wrede, C; Rogers, J G; D'Auria, J M

2003-01-01

The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

Application of a Gradient Descent Continuous Actor-Critic Algorithm for Double-Side Day-Ahead Electricity Market Modeling

Directory of Open Access Journals (Sweden)

Huiru Zhao

2016-09-01

Full Text Available An important goal of China’s electric power system reform is to create a double-side day-ahead wholesale electricity market in the future, where the suppliers (represented by GenCOs and demanders (represented by DisCOs compete simultaneously with each other in one market. Therefore, modeling and simulating the dynamic bidding process and the equilibrium in the double-side day-ahead electricity market scientifically is not only important to some developed countries, but also to China to provide a bidding decision-making tool to help GenCOs and DisCOs obtain more profits in market competition. Meanwhile, it can also provide an economic analysis tool to help government officials design the proper market mechanisms and policies. The traditional dynamic game model and table-based reinforcement learning algorithm have already been employed in the day-ahead electricity market modeling. However, those models are based on some assumptions, such as taking the probability distribution function of market clearing price (MCP and each rival’s bidding strategy as common knowledge (in dynamic game market models, and assuming the discrete state and action sets of every agent (in table-based reinforcement learning market models, which are no longer applicable in a realistic situation. In this paper, a modified reinforcement learning method, called gradient descent continuous Actor-Critic (GDCAC algorithm was employed in the double-side day-ahead electricity market modeling and simulation. This algorithm can not only get rid of the abovementioned unrealistic assumptions, but also cope with the Markov decision-making process with continuous state and action sets just like the real electricity market. Meanwhile, the time complexity of our proposed model is only O(n. The simulation result of employing the proposed model in the double-side day-ahead electricity market shows the superiority of our approach in terms of participant’s profit or social welfare

2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Science.gov (United States)

Goel, Ekta; Singh, Kunal; Singh, Balraj; Kumar, Sanjay; Jit, Satyabrata

2017-09-01

In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and subthreshold swing. The surface potential based formulation of subthreshold current and subthreshold swing is done by solving the 2-D Poisson's equations in the channel region using parabolic approximation method. The dependence of subthreshold characteristics on various device parameters such as gate length ratio, Ge mole fraction, peak doping concentration, projected range, straggle parameter etc. has been studied. The modeling results are found to be well matched with the simulation data obtained by a 2-D device simulator, ATLAS™, from SILVACO.

SIDES - Segment Interconnect Diagnostic Expert System

International Nuclear Information System (INIS)

Booth, A.W.; Forster, R.; Gustafsson, L.; Ho, N.

1989-01-01

It is well known that the FASTBUS Segment Interconnect (SI) provides a communication path between two otherwise independent, asynchronous bus segments. The SI is probably the most important module in any FASTBUS data acquisition network since it's failure to function can cause whole segments of the network to be inaccessible and sometimes inoperable. This paper describes SIDES, an intelligent program designed to diagnose SI's both in situ as they operate in a data acquisition network, and in the laboratory in an acceptance/repair environment. The paper discusses important issues such as knowledge acquisition; extracting knowledge from human experts and other knowledge sources. SIDES can benefit high energy physics experiments, where SI problems can be diagnosed and solved more quickly. Equipment pool technicians can also benefit from SIDES, first by decreasing the number of SI's erroneously turned in for repair, and secondly as SIDES acts as an intelligent assistant to the technician in the diagnosis and repair process

Prototype Si microstrip sensors for the CDF-II ISL detector

CERN Document Server

Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

1999-01-01

Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

Improved opto-electronic properties of silicon heterojunction solar cells with SiO x /Tungsten-doped indium oxide double anti-reflective coatings

Science.gov (United States)

Yu, Jian; Zhou, Jie; Bian, Jiantao; Zhang, Liping; Liu, Yucheng; Shi, Jianhua; Meng, Fanying; Liu, Jinning; Liu, Zhengxin

2017-08-01

Amorphous SiO x was prepared by plasma enhanced chemical vapor deposition (PECVD) to form SiO x /tungsten-doped indium oxide (IWO) double anti-reflective coatings for silicon heterojunction (SHJ) solar cell. The sheet resistance of SiO x /IWO stacks decreases due to plasma treatment during deposition process, which means thinner IWO film would be deposited for better optical response. However, the comparisons of three anti-reflective coating (ARC) structures reveal that SiO x film limits carier transport and the path of IWO-SiO x -Ag structure is non-conductive. The decrease of sheet resistance is defined as pseudo conductivity. IWO film capping with SiO x allows observably reduced reflectance and better response in 300-400 and 600-1200 nm wavelength ranges. Compared with IWO single ARC, the average reflection is reduced by 1.65% with 70 nm SiO x /80 nm IWO double anti-reflective coatings (DARCs) in 500-1200 nm wavelength range, leading to growing external quantum efficiency response, short circuit current density (J sc), and efficiency. After well optimization of SiO x /IWO stacks, an impressive efficiency of 23.08% is obtained with high J sc and without compromising open circuit voltage (V oc) and fill factor. SiO x /IWO DARCs provide better anti-reflective properties over a broad range of wavelength, showing promising application for SHJ solar cells.

Fabrication of double-sided thallium bromide strip detectors

Energy Technology Data Exchange (ETDEWEB)

Hitomi, Keitaro, E-mail: keitaro.hitomi@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Nagano, Nobumichi [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Onodera, Toshiyuki [Department of Electronics and Intelligent Systems, Tohoku Institute of Technology, Sendai 982-8577 (Japan); Kim, Seong-Yun; Ito, Tatsuya; Ishii, Keizo [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

2016-07-01

Double-sided strip detectors were fabricated from thallium bromide (TlBr) crystals grown by the traveling-molten zone method using zone-purified materials. The detectors had three 3.4-mm-long strips with 1-mm widths and a surrounding electrode placed orthogonally on opposite surfaces of the crystals at approximately 6.5×6.5 mm{sup 2} in area and 5 mm in thickness. Excellent charge transport properties for both electrons and holes were observed from the TlBr crystals. The mobility-lifetime products for electrons and holes in the detector were measured to be ~3×10{sup −3} cm{sup 2}/V and ~1×10{sup −3} cm{sup 2}/V, respectively. The {sup 137}Cs spectra corresponding to the gamma-ray interaction position were obtained from the detector. An energy resolution of 3.4% of full width at half maximum for 662-keV gamma rays was obtained from one “pixel” (an intersection of the strips) of the detector at room temperature.

Slim edges in double-sided silicon 3D detectors

International Nuclear Information System (INIS)

Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

2012-01-01

Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

GaInAsP-InP Double Heterostructure Lasers on Si Substrate Grown by LP-MOCVD

National Research Council Canada - National Science Library

Razeghi, M

1993-01-01

... #N00014-93-1-0176 'GaInAsP-InP double heterostructure lasers on Si substrate grown by MOVCD'. In order to achieve this goal of the contract, the CQD research group split the divided research work into three phases (with specific tasks...

Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

2007-01-01

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

LiCa{sub 3}Si{sub 2}N{sub 5} - A Lithium nitridosilicate with a [Si{sub 2}N{sub 5}]{sup 7-} double-chain

Energy Technology Data Exchange (ETDEWEB)

Lupart, Saskia; Schnick, Wolfgang [Department Chemie, Lehrstuhl fuer Anorganische Festkoerperchemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

2012-10-15

The lithium nitridosilicate LiCa{sub 3}Si{sub 2}N{sub 5} was synthesized by the reaction of calcium with Si(NH){sub 2} and Li{sub 3}N in weld shut tantalum ampoules at 900 C. The structure of LiCa{sub 3}Si{sub 2}N{sub 5} [space group C2/c, no. 15, a = 5.1454(10), b = 20.380(4), c = 10.357(2) Aa, β = 91.24(3) , wR{sub 2} = 0.1084, 863 data, 102 parameters] consists of [Si{sub 2}N{sub 5}]{sup 7-} double-chains including edge-sharing tetrahedra. The lithium atoms in the crystal structure are situated in strands along the crystallographic b axis. Lattice energy calculations (MAPLE) and EDX measurements confirmed the electrostatic bonding interactions and the chemical composition. The {sup 29}Si and {sup 7}Li solid-state MAS NMR spectroscopic investigations are reported. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Laser-assisted patterning of double-sided adhesive tapes for optofluidic chip integration

Science.gov (United States)

Zamora, Vanessa; Janeczka, Christian; Arndt-Staufenbiel, Norbert; Havlik, George; Queisser, Marco; Schröder, Henning

2018-02-01

Portable high-sensitivity biosensors exhibit a growing demand in healthcare, food industry and environmental monitoring sectors. Optical biosensors based on photonic integration platforms are attractive candidates due to their high sensitivity, compactness and multiplexing capabilities. However, they need a low-cost and reliable integration with the microfluidic system. Laser-micropatterned double-sided biocompatible adhesive tapes are promising bonding layers for hybrid integration of an optofluidic biochip. As a part of the EU-PHOCNOSIS project, double-sided adhesive tapes have been proposed to integrate the polymer microfluidic system with the optical integrated waveguide sensor chip. Here the adhesive tape should be patterned in a micrometer scale in order to create an interaction between the sample that flows through the polymer microchannel and the photonic sensing microstructure. Three laser-assisted structuring methods are investigated to transfer microchannel patterns to the adhesive tape. The test structure design consists of a single channel with 400 μm wide, 30 mm length and two circular receivers with 3 mm radius. The best structuring results are found by using the picosecond UV laser where smooth and straight channel cross-sections are obtained. Such patterned tapes are used to bond blank polymer substrates to blank silicon substrates. As a proof of concept, the hybrid integration is tested using colored DI-water. Structuring tests related to the reduction of channel widths are also considered in this work. The use of this technique enables a simple and rapid manufacturing of narrow channels (50-60 μm in width) in adhesive tapes, achieving a cheap and stable integration of the optofluidic biochip.

Double-side illuminated titania nanotubes for high volume hydrogen generation by water splitting

Science.gov (United States)

Mohapatra, Susanta K.; Mahajan, Vishal K.; Misra, Mano

2007-11-01

A sonoelectrochemical anodization method is proposed to synthesize TiO2 nanotubular arrays on both sides of a titanium foil (TiO2/Ti/TiO2). Highly ordered TiO2 nanotubular arrays of 16 cm2 area with uniform surface distribution can be obtained using this anodization procedure. These double-sided TiO2/Ti/TiO2 materials are used as both photoanode (carbon-doped titania nanotubes) and cathode (Pt nanoparticles dispersed on TiO2 nanotubes; PtTiO2/Ti/PtTiO2) in a specially designed photoelectrochemical cell to generate hydrogen by water splitting at a rate of 38 ml h-1. The nanomaterials are characterized by FESEM, HRTEM, STEM, EDS, FFT, SAED and XPS techniques. The present approach can be used for large-scale hydrogen generation using renewable energy sources.

Double-Sided Sliding-Paraboloid (DSSP): A new tool for preprocessing GPR data

Science.gov (United States)

Rashed, Mohamed; Rashed, Essam A.

2017-05-01

Background noise in Ground Penetrating Radar (GPR) data is a nagging problem that degrades the quality of GPR images and increases their ambiguity. There are several methods adopting different strategies to remove background noise. In this study, we present the Double-Sided Sliding-Paraboloid (DSSP) as a new background removal technique. Experiments conducted on field GPR data show that the proposed DSSP technique has several advantages over existing background removal techniques. DSSP removes background noise more efficiently while preserving first arrivals and other strong horizontal reflections. Moreover, DSSP introduces no artifacts to GPR data and corrects data for DC-shift and wow noise.

Integrated packaging of multiple double sided cooling planar bond power modules

Science.gov (United States)

Liang, Zhenxian

2018-04-10

An integrated double sided cooled power module has one or multiple phase legs configuration including one or more planar power packages, each planar power package having an upper power switch unit and a lower power switch unit directly bonded and interconnected between two insulated power substrates, and further sandwiched between two heat exchangers via direct bonds. A segmented coolant manifold is interposed with the one or more planar power packages and creates a sealed enclosure that defines a coolant inlet, a coolant outlet and a coolant flow path between the inlet and the outlet. A coolant circulates along the flow path to remove heat and increase the power density of the power module.

An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

Science.gov (United States)

Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

2017-06-01

Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

International Nuclear Information System (INIS)

Teo, Adrian J T; Li, Holden; Yoon, Yong-Jin; Tan, Say Hwa

2017-01-01

Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G −1 , and a highest recorded sensitivity of 44.1 mV G −1 . A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices. (technical note)

Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2013-07-29

We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

Science.gov (United States)

Higashitarumizu, Naoki; Ishikawa, Yasuhiko

2017-09-04

Enhanced direct-gap light emission is reported for Si-capped n + -Ge layers on Si after post-growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at the Ge/Si interface is discussed toward Ge/Si double heterostructure (DH) lasers. P-doped n + -Ge layer (1 × 10 19 cm -3 , 400 nm) is grown on Si by ultra-high vacuum chemical vapor deposition, followed by a growth of Si capping layer (5 nm) to form a Si/Ge/Si DH structure. Post-growth RCA to eliminate defects in Ge is performed in N 2 at temperatures between 900°C and 780°C, where the annealing time is minimized to be 5 s in each RCA cycle to prevent an out-diffusion of P dopants from the Ge surface. Direct-gap photoluminescence (PL) intensity at 1.6 µm increases with the RCA cycles up to 40, although the threading dislocation density in Ge is not reduced after 3 cycles in the present condition. The PL enhancement is ascribed to the suppression of NRR at the Ge/Si interface, where an intermixed SiGe alloy is formed. For Ge/Si DH lasers, NRR at the Ge/Si interface is found to have a significant impact on the threshold current density Jth. In order to achieve Jth on the order of 1 kA/cm 2 , similar to III-V lasers, the interface recombination velocity S is required below 10 3 cm/s in spite of S as large as 10 5 cm/s at the ordinary defect-rich Ge/Si interface.

Bridge toughening enhancement in double-notched MoSi2/Nb model composites

International Nuclear Information System (INIS)

Pickard, S.M.; Ghosh, A.K.

1996-01-01

Single-ply composites containing both laminate and continuous Nb fiber reinforcement coated with Al 2 O 3 debond coatings in an MoSi 2 matrix are used as model systems for investigating bridge toughening concepts for various precrack configurations., When cracks are introduced symmetrically on either side of the ductile phase with zero crack offset spacing (S = 0), a minimum amount of energy is expended in plastic deformation and the local rupture process in the metal, as measured by the area of the force displacement curve in tension. For asymmetric precracks introduced on either side of the ductile reinforcement, as the offset spacing, S, was varied from 1 to 20 R (R being the ductile phase half-thickness), the overall extension continuously increased within the bridging ligament. The effective ligament gage length was nearly equal to the crack spacing in the limiting case of a weak interface. However, the ductile Nb phase developed a Nb 5 Si 3 reaction layer on its surface which was strongly bonded to the Nb and was found to undergo periodic cracking, leading to numerous shear bands within the ductile phase. This unique and previously unreported mode of metal deformation in shear loading has been analyzed using a simple geometric model. The results indicate that the profusion of shear bands is the primary source of toughening enhancement in the case of asymmetric crack geometry, which was not recognized in prior work of this type

Transparent, double-sided, ITO-free, flexible dye-sensitized solar cells based on metal wire/ZnO nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Wang, Wei; Zhao, Qing; Li, Heng; Yu, Dapeng [State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 (China); Wu, Hongwei; Zou, Dechun [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)

2012-07-10

Transparent, double-sided, flexible, ITO-free dye-sensitized solar cells (DSSCs) are fabricated in a simple, facile, and controllable way. Highly ordered, high-crystal-quality, high-density ZnO nanowire arrays are radially grown on stainless steel, Au, Ag, and Cu microwires, which serve as working electrodes. Pt wires serve as the counter electrodes. Two metal wires are encased in electrolyte between two poly(ethylene terephthalate) (PET) films (or polydimethylsiloxane (PDMS) films) to render the device both flexible and highly transparent. The effect of the dye thickness on the photovoltaic performance of the DSSCs as a function of dye-loading time is investigated systematically. Shorter dye-loading times lead to thinner dye layers and better device performance. A dye-loading time of 20 min results in the best device performance. An oxidation treatment of the metal wires is developed effectively to avoid the galvanic-battery effect found in the experiment, which is crucial for real applications of double-metal-wire DSSC configurations. The device shows very good transparency and can increase sunlight use efficiency through two-sided illumination. The double-wire DSSCs remain stable for a long period of time and can be bent at large angles, up to 107 , reversibly, without any loss of performance. The double-wire-PET, planar solar-cell configuration can be used as window stickers and can be readily realized for large-area-weave roll-to-roll processing. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Surface topography acquisition method for double-sided near-right-angle structured surfaces based on dual-probe wavelength scanning interferometry.

Science.gov (United States)

Zhang, Tao; Gao, Feng; Jiang, Xiangqian

2017-10-02

This paper proposes an approach to measure double-sided near-right-angle structured surfaces based on dual-probe wavelength scanning interferometry (DPWSI). The principle and mathematical model is discussed and the measurement system is calibrated with a combination of standard step-height samples for both probes vertical calibrations and a specially designed calibration artefact for building up the space coordinate relationship of the dual-probe measurement system. The topography of the specially designed artefact is acquired by combining the measurement results with white light scanning interferometer (WLSI) and scanning electron microscope (SEM) for reference. The relative location of the two probes is then determined with 3D registration algorithm. Experimental validation of the approach is provided and the results show that the method is able to measure double-sided near-right-angle structured surfaces with nanometer vertical resolution and micrometer lateral resolution.

Residual strains and microstructure development in single and sequential double sided friction stir welds in RQT-701 steel

Energy Technology Data Exchange (ETDEWEB)

Barnes, S.J. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)], E-mail: simon.barnes-2@manchester.ac.uk; Steuwer, A. [FaME38, ILL ESRF, 6 rue J.Horowitz, 38042 Grenoble, Cedex (France); University of Plymouth, Drake Circus, Plymouth PL4 8AA (United Kingdom); Mahawish, S. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom); Johnson, R. [TWI Yorkshire, Wallis Way, Catcliffe, Rotherham S60 5TZ (United Kingdom); Withers, P.J. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)

2008-09-25

Single and double sided partial penetration friction stir butt welds, in a rolled, quenched and tempered steel (RQT-701), were produced at The Welding Institute (TWI) under controlled process conditions. The residual strain distributions in the longitudinal and transverse directions have been measured using energy dispersive synchrotron X-ray diffraction. The measured strains were indicative of longitudinal tensile residual stresses at levels greater than the 0.2% yield stress of the parent metal in both the single and double pass welds. In both cases, the maximum tensile strain was found in the parent metal at the boundary of the heat affected zone (HAZ). Microstructural analysis of the welds was carried out using optical microscopy and hardness variations were also mapped across the weld-plate cross-section. The maximum hardness was observed in the mixed bainite/martensite structure of the weld nugget on the advancing side of the stir zone. The minimum hardness was observed in the HAZ.

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

Science.gov (United States)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

Residual strains and microstructure development in single and sequential double sided friction stir welds in RQT-701 steel

International Nuclear Information System (INIS)

Barnes, S.J.; Steuwer, A.; Mahawish, S.; Johnson, R.; Withers, P.J.

2008-01-01

Single and double sided partial penetration friction stir butt welds, in a rolled, quenched and tempered steel (RQT-701), were produced at The Welding Institute (TWI) under controlled process conditions. The residual strain distributions in the longitudinal and transverse directions have been measured using energy dispersive synchrotron X-ray diffraction. The measured strains were indicative of longitudinal tensile residual stresses at levels greater than the 0.2% yield stress of the parent metal in both the single and double pass welds. In both cases, the maximum tensile strain was found in the parent metal at the boundary of the heat affected zone (HAZ). Microstructural analysis of the welds was carried out using optical microscopy and hardness variations were also mapped across the weld-plate cross-section. The maximum hardness was observed in the mixed bainite/martensite structure of the weld nugget on the advancing side of the stir zone. The minimum hardness was observed in the HAZ

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

Science.gov (United States)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Double-Sided Single-Pass Submerged Arc Welding for 2205 Duplex Stainless Steel

Science.gov (United States)

Luo, Jian; Yuan, Yi; Wang, Xiaoming; Yao, Zongxiang

2013-09-01

The duplex stainless steel (DSS), which combines the characteristics of ferritic steel and austenitic steel, is used widely. The submerged arc welding (SAW) method is usually applied to join thick plates of DSS. However, an effective welding procedure is needed in order to obtain ideal DSS welds with an appropriate proportion of ferrite (δ) and austenite (γ) in the weld zone, particularly in the melted zone and heat-affected zone. This study evaluated the effectiveness of a high efficiency double-sided single-pass (DSSP) SAW joining method for thick DSS plates. The effectiveness of the converse welding procedure, characterizations of weld zone, and mechanical properties of welded joint are analyzed. The results show an increasing appearance and continuous distribution feature of the σ phase in the fusion zone of the leading welded seam. The converse welding procedure promotes the σ phase to precipitate in the fusion zone of leading welded side. The microhardness appears to significantly increase in the center of leading welded side. Ductile fracture mode is observed in the weld zone. A mixture fracture feature appears with a shear lip and tears in the fusion zone near the fusion line. The ductility, plasticity, and microhardness of the joints have a significant relationship with σ phase and heat treatment effect influenced by the converse welding step. An available heat input controlling technology of the DSSP formation method is discussed for SAW of thick DSS plates.

Study of inter-strip gap effects and efficiency for full energy detection of double sided silicon strip detectors

International Nuclear Information System (INIS)

Fisichella, M.; Forneris, J.; Grassi, L.

2015-01-01

We performed a characterization of Double Sided Silicon Strip Detectors (DSSSD) with the aim to carry out a systematic study of the inter-strip effects on the energy measurement of charged particles. The dependence of the DSSSD response on ion, energy and applied bias has been investigated. (author)

Double-sided electron-beam generator for KrF laser excitation

International Nuclear Information System (INIS)

Schlitt, L.; Swingle, J.

1980-05-01

Several laser systems excited by electron beam have been identified as candidates for pump sources for laser fusion applications. The electron beam generators required must be compact, reliable and capable of synchronization with other system components. A KrF laser producing a minimum output of 25 J was needed for the RAPIER (Raman Amplifier Pumped by Intensified Excimer Radiation) system. A double-sided electron beam system was designed and constructed specifically for this purpose and has produced > 35 J of KrF output. Each of the two electron beam machines in the system operates with an rms jitter of 0.4 ns and together occupy approx. 3.5 m 2 of floor space. The successful operation of this laser has engendered requests for a description of the engineering details of this system. This document contains a brief description of the design issues and a full set of engineering drawings for this KrF laser amplifier

Does sucralfate reduce early side effects of pelvic radiation? A double-blind randomized trial.

Science.gov (United States)

Stellamans, Karin; Lievens, Yolande; Lambin, Philippe; Van den Weyngaert, Danielle; Van den Bogaert, Walter; Scalliet, Pierre; Hutsebaut, Liesbeth; Haustermans, Karin

2002-11-01

STUDY AND METHODS: A double-blind placebo-controlled study randomized 108 patients to investigate the effect of sucralfate on gastrointestinal side effects of pelvic radiation. Overall, pelvic radiation with the administered doses and fields and performed according to nowadays technical standards, was well tolerated. Comparison of the mean scores and the peak reactions for radiotherapy discomfort, diarrhoea and number of stools per day in the 80 evaluable patients showed no statistically significant difference between sucralfate and placebo. Based on these results, the use of sucralfate can not be recommended as standard practice.

Does sucralfate reduce early side effects of pelvic radiation? A double-blind randomized trial

International Nuclear Information System (INIS)

Stellamans, Karin; Lievens, Yolande; Lambin, Philippe; Van den Weyngaert, Danielle; Van den Bogaert, Walter; Scalliet, Pierre; Hutsebaut, Liesbeth; Haustermans, Karin

2002-01-01

Study and methods: A double-blind placebo-controlled study randomized 108 patients to investigate the effect of sucralfate on gastrointestinal side effects of pelvic radiation. Results: Overall, pelvic radiation with the administered doses and fields and performed according to nowadays technical standards, was well tolerated. Comparison of the mean scores and the peak reactions for radiotherapy discomfort, diarrhoea and number of stools per day in the 80 evaluable patients showed no statistically significant difference between sucralfate and placebo. Conclusion: Based on these results, the use of sucralfate can not be recommended as standard practice

Self-sealing multilayer coating for SiC/SiC composites

International Nuclear Information System (INIS)

Ferraris, M.; Appendino Montorsi, M.; Salvo, M.; Isola, C.; Kohyama, A.

1997-01-01

A double layer coating for SiC/SiC for fusion applications is proposed: the first layer consists in a homogeneous, crack free, glass-ceramic with high characteristic temperatures and thermal expansion coefficient compatible to the composite one; the second layer is amorphous and shows self-sealing properties above 700degC. The glass and the glass-ceramic materials used for this double layer coating do not contain lithium and boron oxide, making them particularly interesting for thermonuclear fusion applications. The self-sealing property of the double layer coating was valued by inducing cracks on the coatings and observing their reparation after heating. (author)

Double-layer model of the venus night-side ionosphere formation from the radio occultation data

International Nuclear Information System (INIS)

Osmolovskij, I.K.; Savich, N.A.; Samoznaev, L.N.

1984-01-01

The results of the radio occultation experiments performed with the Venera space probes - 9, 10(1975) and Pioneer - Venus satellite (1978) have shown that in most of the cases the electron concentration distribution in the Venus night-side ionosphere in the low solar activity years has two maxima (double-layer profile) whereas in the high activity years - one maximum. The two-component (O + and O 2 + ) diffusion model is suggested that describes naturally the formation of one or two maxima depending on physical conditions in the Venus upper atmosphere. At initial hypothesis accepted is the well-known hypothesis of the night-side ionosphere formation for account of the O + plasma overflow from the day side to the night one. The main idea of the study consists in finding conditions when the upper maximum formed in the O + ion downward current is spaced by height at a certain distance from the lower current caused by the O 2 + ions being formed as a result of O + ion chemical reactions with CO 2 molecules

Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

Science.gov (United States)

Yamashita, T.; Hayashi, S.; Naijo, T.; Momose, K.; Osawa, H.; Senzaki, J.; Kojima, K.; Kato, T.; Okumura, H.

2018-05-01

Double Shockley-type stacking faults (2SSFs) formed in 4H-SiC epitaxial films with a dopant concentration of 1.0 × 1016 cm-3 were characterized using grazing incident X-ray topography and high-resolution scanning transmission electron microscopy. The origins of 2SSFs were investigated, and it was found that 2SSFs in the epitaxial layer originated from narrow SFs with a double Shockley structure in the substrate. Partial dislocations formed between 4H-type and 2SSF were also characterized. The shapes of 2SSFs are related with Burgers vectors and core types of the two Shockley partial dislocations.

Comparison of fiber lasers based on distributed side-coupled cladding-pumped fibers and double-cladding fibers.

Science.gov (United States)

Huang, Zhihe; Cao, Jianqiu; Guo, Shaofeng; Chen, Jinbao; Xu, Xiaojun

2014-04-01

We compare both analytically and numerically the distributed side-coupled cladding-pumped (DSCCP) fiber lasers and double cladding fiber (DCF) lasers. We show that, through optimization of the coupling and absorbing coefficients, the optical-to-optical efficiency of DSCCP fiber lasers can be made as high as that of DCF lasers. At the same time, DSCCP fiber lasers are better than the DCF lasers in terms of thermal management.

Detector production for the R3B Si-tracker

Energy Technology Data Exchange (ETDEWEB)

Borri, M., E-mail: marcello.borri@liverpool.ac.uk [University of Liverpool, Department of Physics, Oxford Street, Liverpool L69 7ZE (United Kingdom); Lemmon, R. [STFC Daresbury Laboratory, Daresbury, Warrington WA4 4 CE (United Kingdom); Thornhill, J.; Bate, R.; Chartier, M. [University of Liverpool, Department of Physics, Oxford Street, Liverpool L69 7ZE (United Kingdom); Clague, N. [STFC Daresbury Laboratory, Daresbury, Warrington WA4 4 CE (United Kingdom); Herzberg, R.-D. [University of Liverpool, Department of Physics, Oxford Street, Liverpool L69 7ZE (United Kingdom); Labiche, M. [STFC Daresbury Laboratory, Daresbury, Warrington WA4 4 CE (United Kingdom); Lindsay, S.; Nolan, P.; Pearce, F.; Powell, W.; Wells, D. [University of Liverpool, Department of Physics, Oxford Street, Liverpool L69 7ZE (United Kingdom)

2016-11-11

R3B is a fixed target experiment which will study reactions with relativistic radioactive beams at FAIR. Its Si-tracker will surround the target volume and it will detect light charged-particles like protons. The detector technology in use consists of double-sided silicon strip sensors wire bonded to the custom made R3B-ASIC. The tracker allows for a maximum of two outer layers and one inner layer. This paper reports on the production of detectors necessary to build the minimum tracking configuration: one inner layer and one outer layer.

Double-side active TiO{sub 2}-modified nanofiltration membranes in continuous flow photocatalytic reactors for effective water purification

Energy Technology Data Exchange (ETDEWEB)

Romanos, G.Em., E-mail: groman@chem.demokritos.gr [Institute of Physical Chemistry, NCSR Demokritos, 153 10 Agia Paraskevi Attikis, Athens (Greece); Athanasekou, C.P.; Katsaros, F.K.; Kanellopoulos, N.K. [Institute of Physical Chemistry, NCSR Demokritos, 153 10 Agia Paraskevi Attikis, Athens (Greece); Dionysiou, D.D. [Department of Civil and Environmental Engineering, University of Cincinnati, Cincinnati, OH 45221-0071 (United States); Likodimos, V.; Falaras, P. [Institute of Physical Chemistry, NCSR Demokritos, 153 10 Agia Paraskevi Attikis, Athens (Greece)

2012-04-15

Highlights: Black-Right-Pointing-Pointer A novel CVD reactor for the developments of double side active TiO{sub 2} membranes. Black-Right-Pointing-Pointer Double side active TiO{sub 2} membranes efficiently photodegrade organic pollutants. Black-Right-Pointing-Pointer A photocatalytic membrane purification device for continuous flow water treatment. - Abstract: A chemical vapour deposition (CVD) based innovative approach was applied with the purpose to develop composite TiO{sub 2} photocatalytic nanofiltration (NF) membranes. The method involved pyrolytic decomposition of titanium tetraisopropoxide (TTIP) vapor and formation of TiO{sub 2} nanoparticles through homogeneous gas phase reactions and aggregation of the produced intermediate species. The grown nanoparticles diffused and deposited on the surface of {gamma}-alumina NF membrane tubes. The CVD reactor allowed for online monitoring of the carrier gas permeability during the treatment, providing a first insight on the pore efficiency and thickness of the formed photocatalytic layers. In addition, the thin TiO{sub 2} deposits were developed on both membrane sides without sacrificing the high yield rates. Important innovation was also introduced in what concerns the photocatalytic performance evaluation. The membrane efficiency to photo degrade typical water pollutants, was evaluated in a continuous flow water purification device, applying UV irradiation on both membrane sides. The developed composite NF membranes were highly efficient in the decomposition of methyl orange exhibiting low adsorption-fouling tendency and high water permeability.

Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

International Nuclear Information System (INIS)

Xu Jiaxiong; Yao Ruohe

2011-01-01

Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

Whole field strain measurement in critical thin adhesive layer of single- and double-sided repaired CFRP panel using DIC

Science.gov (United States)

Kashfuddoja, Mohammad; Ramji, M.

2015-03-01

In the present work, the behavior of thin adhesively layer in patch repaired carbon fiber reinforced polymer (CFRP) panel under tensile load is investigated experimentally using digital image correlation (DIC) technique. The panel is made of Carbon/epoxy composite laminate and the stacking sequence in the panel is [0º]4. A circular hole of 10 mm diameter (d) is drilled at the center of the panel to mimic the case of low velocity impact damage removal. The panel with open hole is repaired with double sided (symmetrical) and single sided (unsymmetrical) rectangular patch made of same panel material having stacking sequence of [0º]3. Araldite 2011 is used for bonding the patch onto the panel over the damaged area. The global behavior of thin adhesive layer is examined by analyzing whole field strain distribution using DIC. Longitudinal, peel and shear strain field in both double and single sided repair configuration is studied and a compression is made between them. An estimate of shear transfer length which is an essential parameter in arriving at an appropriate overlap length in patch design is proposed from DIC and FEA. Damage development, failure mechanism and load displacement behavior is also investigated. The experimental results are compared with the numerical predictions.

SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Minghua Li

2014-01-01

Full Text Available In this work we prepared double-layer antireflection coatings (DARC by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC, while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm/SiNx:H (80 nm DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK

Energy Technology Data Exchange (ETDEWEB)

Povoli, M., E-mail: povoli@disi.unitn.it [Dipartimento di Ingegneria e Scienza dell' Informazione, Università di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento) (Italy); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento, TN (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Università di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento) (Italy); Giacomini, G.; Mattedi, F.; Vianello, E.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento, TN (Italy)

2013-01-21

We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.

Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK

International Nuclear Information System (INIS)

Povoli, M.; Bagolini, A.; Boscardin, M.; Dalla Betta, G.-F.; Giacomini, G.; Mattedi, F.; Vianello, E.; Zorzi, N.

2013-01-01

We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.

The design and construction of a double-sided Silicon Microvertex Detector for the L3 experiment at CERN

International Nuclear Information System (INIS)

Adam, A.; Ambrosi, G.; Babucci, E.; Bertucci, B.; Biasini, M.; Bilei, G.M.; Caria, M.; Checcucci, B.; Easo, S.; Fiandrini, E.; Krastev, V.R.; Massetti, R.; Pauluzzi, M.; Santocchia, A.; Servoli, L.; Baschirotto, A.; Bosetti, M.; Pensotti, S.; Rancoita, P.G.; Rattaggi, M.; Terzi, G.; Battiston, R.; Bay, A.; Burger, W.J.; Extermann, P.; Perrin, E.; Susinno, G.F.; Bencze, G.Y.L.; Kornis, J.; Toth, J.; Bobbink, G.J.; Duinker, P.; Brooks, M.L.; Coan, T.E.; Kapustinsky, J.S.; Kinnison, W.W.; Lee, D.M.; Mills, G.B.; Thompson, T.C.; Busenitz, J.; DiBitonto, D.; Camps, C.; Commichau, V.; Hangartner, K.; Schmitz, P.; Chen, A.; Hou, S.; Lin, W.T.; Gougas, A.; Kim, D.; Paul, T.; Hauviller, C.; Herve, A.; Josa, I.; Landi, G.; Lebeau, M.; Lecomte, P.; Viertel, G.M.; Waldmeier, S.; Leiste, R.; Lejeune, E.; Weill, R.; Lohmann, W.; Nowak, H.; Sachwitz, M.; Schoeniech, B.; Tonisch, F.; Trowitzsch, G.; Vogt, H.; Passaleva, G.; Yeh, S.C.

1993-01-01

A Silicon Microvertex Detector (SMD) has been commissioned for the L3 experiment at the Large Electron-Positron colliding-beam accelerator (LEP) at the European Center for Nuclear Physics, (CERN). The SMD is a 72,672 channel, two layer barrel tracker that is comprised of 96 ac-coupled, double-sided silicon detectors. Details of the design and construction are presented

Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

Directory of Open Access Journals (Sweden)

Erick Omondi Ateto

2016-01-01

Full Text Available We investigated the antireflective (AR effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H exhibit a short circuit current density (Jsc of 38.65 mA/cm2 and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.

Lithium analysis using a double-sided silicon strip detector at LIBAF

Science.gov (United States)

De La Rosa, Nathaly; Kristiansson, Per; Nilsson, E. J. Charlotta; Ros, Linus; Elfman, Mikael; Pallon, Jan

2017-08-01

Quantification and mapping possibilities of lithium in geological material, by Nuclear Reaction Analysis (NRA), was evaluated at the Lund Ion Beam Analysis Facility (LIBAF). LiF and two Standard Reference Materials, (SRM 610 and SRM 612) were used in the investigation. The main part of the data was obtained at the beam energy 635 keV studying the high Q-value reaction 7Li(p, α)4He, but reaction yield and detection limits were also briefly investigated as a function of the energy. A double-sided silicon strip detector (DSSSD) was used to detect the α -particles emitted in the reaction in the backward direction. The combination of the high Q-value, a reasonably good cross-section and the possibility to use a high beam current have been demonstrated to allow for measurement of concentrations down below 50 ppm. Proton energies below 800 keV were demonstrated to be appropriate energies for extracting lithium in combination with boron analysis.

Mitigation of rotational instability of high-beta field-reversed configuration by double-sided magnetized plasmoid injection

Energy Technology Data Exchange (ETDEWEB)

Itagaki, H.; Inomoto, M. [Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561 (Japan); Asai, T.; Takahashi, Ts. [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan)

2014-03-15

Active control of destructive rotational instability in a high-beta field-reversed configuration (FRC) plasma was demonstrated by using double-sided plasmoid injection technique. The elliptical deformation of the FRC's cross section was mitigated as a result of substantial suppression of spontaneous spin-up by the plasmoid injection. It was found that the injected plasmoid provided better stability against the rotational mode, suggesting that the compensation of the FRC's decaying magnetic flux might help to suppress its spin-up.

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

TiO2 coated Si nanowire electrodes for electrochemical double layer capacitors in room temperature ionic liquid

International Nuclear Information System (INIS)

Konstantinou, F; Shougee, A; Albrecht, T; Fobelets, K

2017-01-01

Three TiO 2 deposition processes are used to coat the surface of Si nanowire array electrodes for electrochemical double layer capacitors in room temperature ionic liquid [Bmim][NTF 2 ]. The fabrication processes are based on wet chemistry only and temperature treatments are kept below 450 °C. Successful TiO 2 coatings are found to be those that are carried out at low pressure and with low TiO 2 coverage to avoid nanowires breakage. The best TiO 2 coated Si nanowire array electrode in [Bmim][NTF 2 ] showed energy densities of 0.9 Wh·kg −1 and power densities of 2.2 kW·kg −1 with a nanowire length of ∼10 µ m. (paper)

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

International Nuclear Information System (INIS)

Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

2016-01-01

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Giant plasmon excitation in single and double ionization of C60 by fast highly charged Si and O ions

International Nuclear Information System (INIS)

Kelkar, A H; Kadhane, U; Misra, D; Tribedi, L C

2007-01-01

Se have investigated single and double ionization of C 60 molecule in collisions with 2.33 MeV/u Si q+ (q=6-14) and 3.125 MeV/u O q+ (q=5-8) projectiles. The projectile charge state dependence of the single and double ionization yields of C 60 are then compared to those for an ion-atom collision system using Ne gas as a target. A large difference between the gas and the cluster target behaviour was partially explained in terms of a model based on collective excitation namely the giant dipole plasmon resonance (GDPR). The qualitative agreement between the data and GDPR model prediction for single and double ionization signifies the importance of single and double plasmon excitations in the ionization process. A large deviation of the GDPR model for triple and quadruple ionization from the experimental data imply the importance of the other low impact parameter processes such as evaporation, fragmentation and a possible solid-like dynamical screening

Why Public Employment Services Always Fail. Double-sided Asymmetric Information and the Replacement of Low-skill Workers in six European Countries

DEFF Research Database (Denmark)

Larsen, Christian Albrekt; Vesan, Patrik

2012-01-01

It has been a general finding across Europe that very few job matches are facilitated by public employment services (PES).The article explains this failure by highlighting the existence of a double-sided asymmetric information problem on the labour market. It is argued that although a PES...

Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

International Nuclear Information System (INIS)

Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

2012-01-01

Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

Studies of double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Patton, A. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.

1996-12-01

The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors` leakage current, depletion voltage, bias resistance, interstrip and coupling capacitance, and coupling capacitor breakdown voltage were studied. (orig.).

Studies of double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Seidel, S.C.; Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Patton, A.

1996-01-01

The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors' leakage current, depletion voltage, bias resistance, interstrip and coupling capacitance, and coupling capacitor breakdown voltage were studied. (orig.)

Development and performance of double sided silicon strip detectors

International Nuclear Information System (INIS)

Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

1991-01-01

Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Hohlraum-driven mid-Z (SiO2) double-shell implosions on the omega laser facility and their scaling to NIF.

Science.gov (United States)

Robey, H F; Amendt, P A; Milovich, J L; Park, H-S; Hamza, A V; Bono, M J

2009-10-02

High-convergence, hohlraum-driven implosions of double-shell capsules using mid-Z (SiO2) inner shells have been performed on the OMEGA laser facility [T. R. Boehly, Opt. Commun. 133, 495 (1997)]. These experiments provide an essential extension of the results of previous low-Z (CH) double-shell implosions [P. A. Amendt, Phys. Rev. Lett. 94, 065004 (2005)] to materials of higher density and atomic number. Analytic modeling, supported by highly resolved 2D numerical simulations, is used to account for the yield degradation due to interfacial atomic mixing. This extended experimental database from OMEGA enables a validation of the mix model, and provides a means for quantitatively assessing the prospects for high-Z double-shell implosions on the National Ignition Facility [Paisner, Laser Focus World 30, 75 (1994)].

The structure modification of Si-SiO2 irradiated by Fe+ ion

International Nuclear Information System (INIS)

Jin Tao; Ma Zhongquan; Guo Qi

1992-01-01

The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

Science.gov (United States)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Giant plasmon excitation in single and double ionization of C{sub 60} by fast highly charged Si and O ions

Energy Technology Data Exchange (ETDEWEB)

Kelkar, A H; Kadhane, U; Misra, D; Tribedi, L C [Tata Institute of Fundamental Research, Colaba, Mumbai-5 (India)

2007-09-15

Se have investigated single and double ionization of C{sub 60} molecule in collisions with 2.33 MeV/u Si{sup q+} (q=6-14) and 3.125 MeV/u O{sup q+} (q=5-8) projectiles. The projectile charge state dependence of the single and double ionization yields of C{sub 60} are then compared to those for an ion-atom collision system using Ne gas as a target. A large difference between the gas and the cluster target behaviour was partially explained in terms of a model based on collective excitation namely the giant dipole plasmon resonance (GDPR). The qualitative agreement between the data and GDPR model prediction for single and double ionization signifies the importance of single and double plasmon excitations in the ionization process. A large deviation of the GDPR model for triple and quadruple ionization from the experimental data imply the importance of the other low impact parameter processes such as evaporation, fragmentation and a possible solid-like dynamical screening.

Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors

Directory of Open Access Journals (Sweden)

Torresi D.

2016-01-01

Full Text Available In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different energies directly sent on the detector and a second experiment by mean of a proton microbeam. Results show that the effective width of the inter-strip region and the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are qualitatively reproduced by a simplified model based on the Shockley-Ramo-Gunn framework.

SiliPET: An ultra high resolution design of a small animal PET scanner based on double sided silicon strip detector stacks

International Nuclear Information System (INIS)

Zavattini, G.; Cesca, N.; Di Domenico, G.; Moretti, E.; Sabba, N.

2006-01-01

We investigated the capabilities of a small animal PET scanner, named SiliPET, based on four stacks of double sided silicon strips detectors. Each stack consists of 40 silicon detectors with dimension 60x60x1mm 3 . These are arranged to form a box 5x5x6cm 3 with minor sides opened; the box represents the maximal FOV of the scanner. The performance parameters of SiliPET scanner have been estimated, giving an intrinsic spatial resolution of 0.52mm and a sensitivity of 5.1% at the center of the system

Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-12-18

Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering

International Nuclear Information System (INIS)

He, Bo; Wang, HongZhi; Li, YaoGang; Ma, ZhongQuan; Xu, Jing; Zhang, QingHong; Wang, ChunRui; Xing, HuaiZhong; Zhao, Lei; Rui, YiChuan

2013-01-01

Highlights: •Because the ITO/AZO double films lead to a great decrease of the lateral resistance. •The photon current can easily flow through top film entering the Cu front contact. •High photocurrent is obtained under a reverse bias. -- Abstract: The novel ITO/AZO/SiO 2 /p-Si SIS heterojunction has been fabricated by low temperature thermal oxidation an ultrathin silicon dioxide and RF sputtering deposition ITO/AZO double films on p-Si (1 0 0) polished substrate. The microstructural, optical and electrical properties of the ITO/AZO antireflection films were characterized by XRD, SEM, UV–VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films are of good quality. And XPS was carried out on the ultrathin SiO 2 film. The heterojunction shows strong rectifying behavior under a dark condition, which reveals that formation of a diode between AZO and p-Si. The ideality factor and the saturation current of this diode is 2.7 and 8.68 × 10 −5 A, respectively. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into p-Si. We can see that under reverse bias conditions the photocurrent of ITO/AZO/SiO 2 /p-Si SIS heterojunction is much higher than the photocurrent of AZO/SiO 2 /p-Si SIS heterojunction. Because the high quality crystallite and the good conductivity of ITO film which prepared by magnetron-sputtering on AZO film lead to a great decrease of the lateral resistance. The photon induced current can easily flow through ITO layer entering the Cu front contact. Thus, high photocurrent is obtained under a reverse bias

Pillarization of layer double hydroxides (Mg/Al with keggin type K4[α-SiW12O40]•nH2O and its application as adsorbent of procion red dye

Directory of Open Access Journals (Sweden)

Intan Permata Sari

2017-07-01

Full Text Available Pillarization of layered double hydroxides with polyoxometalate K4[α-SiW12O40]•nH2O at various times i.e. 3, 6, 9, 12, 24, 36 and 48 hours has been done. The pillared product was characterized by FT-IR spectrophotometer and XRD. The optimum pillared layered double hydroxides of polyoxometalate K4[α-SiW12O40]•nH2O was used as an adsorbent of procion red dye. The results of characterization using FT-IR spectrophotometer is not yet show the optimum pillarization process. The characterisation using XRD the successfully of pillared layered double hydroxides of polyoxometalate K4[α-SiW12O40]•nH2O showing the existence of diffraction angle 8.5o with intensity 355. Furthermore, the pillared layered double hydroxides of polyoxometalate K4[α-SiW12O40]•nH2O with time variation of 12 hours was applied as an adsorbent of procion red dye. The results show the adsorption rate was 0.523 min-1, the highest of absorption capacity at 70oC was 10.8 mol/g, the highest energy of absorption 70 oC was 125 kJ/mol. The enthalpy (∆H and entropy (∆S, decrease as the increasing concentration of procion red dye. Keywords: layered double hydroxides, polyoxometalate, pillaration, procion red, adsorption

Breakdown of coupling dielectrics for Si microstrip detectors

International Nuclear Information System (INIS)

Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

1999-01-01

Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

THE THERMODYNAMIC PROPERTIES OF MELTS OF DOUBLE SYSTEM MgO – Al2O3, MgO – SiO2, MgO – CaF2, Al2O3 – SiO2, Al2O3 – CaF2, SiO2 – CaF2

Directory of Open Access Journals (Sweden)

В. Судавцова

2012-04-01

Full Text Available Methodology of prognostication of thermodynamics properties of melts is presented from the coordinatesof liquidus of diagram of the state in area of equilibria a hard component is solution, on which energies ofmixing of Gibbs are expected in the double border systems of MgO – Al2O3, MgO – SiO2, MgO – CaF2,Al2O3 – SiO2, Al2O3 - CaF2, SiO2 - CaF2. For the areas of equilibrium there is quasibinary connection(MgAl2O4, Mg2SiO4, Al6Si2O13 – a grout at calculations was used equalization of Hauffe-Wagner. Theobtained data comport with literary

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

International Nuclear Information System (INIS)

Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

2013-01-01

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

International Nuclear Information System (INIS)

Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

2016-01-01

We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

Synthesis of PLGA-Lipid Hybrid Nanoparticles for siRNA Delivery Using the Emulsion Method PLGA-PEG-Lipid Nanoparticles for siRNA Delivery.

Science.gov (United States)

Wang, Lei; Griffel, Benjamin; Xu, Xiaoyang

2017-01-01

The effective delivery of small interfering RNA (siRNA) to tumor cells remains a challenge for applications in cancer therapy. The development of polymeric nanoparticles with high siRNA loading efficacy has shown great potential for cancer targets. Double emulsion solvent evaporation technique is a useful tool for encapsulation of hydrophilic molecules (e.g., siRNA). Here we describe a versatile platform for siRNA delivery based on PLGA-PEG-cationic lipid nanoparticles by using the double emulsion method. The resulting nanoparticles show high encapsulation efficiency for siRNA (up to 90%) and demonstrate effective downregulation of the target genes in vitro and vivo.

Biomechanical comparison of double-row versus transtendon single-row suture anchor technique for repair of the grade III partial articular-sided rotator cuff tears.

Science.gov (United States)

Zhang, Chun-Gang; Zhao, De-Wei; Wang, Wei-Ming; Ren, Ming-Fa; Li, Rui-Xin; Yang, Sheng; Liu, Yu-Peng

2010-11-01

For partial-thickness tears of the rotator cuff, double-row fixation and transtendon single-row fixation restore insertion site anatomy, with excellent results. We compared the biomechanical properties of double-row and transtendon single-row suture anchor techniques for repair of grade III partial articular-sided rotator cuff tears. In 10 matched pairs of fresh-frozen sheep shoulders, the infraspinatus tendon from 1 shoulder was repaired with a double-row suture anchor technique. This comprised placement of 2 medial anchors with horizontal mattress sutures at an angle of ≤ 45° into the medial margin of the infraspinatus footprint, just lateral to the articular surface, and 2 lateral anchors with horizontal mattress sutures. Standardized, 50% partial, articular-sided infraspinatus lesions were created in the contralateral shoulder. The infraspinatus tendon from the contralateral shoulder was repaired using two anchors with transtendon single-row mattress sutures. Each specimen underwent cyclic loading from 10 to 100 N for 50 cycles, followed by tensile testing to failure. Gap formation and strain over the footprint area were measured using a motion capture system; stiffness and failure load were determined from testing data. Gap formation for the transtendon single-row repair was significantly smaller (P row repair for the first cycle ((1.74 ± 0.38) mm vs. (2.86 ± 0.46) mm, respectively) and the last cycle ((3.77 ± 0.45) mm vs. (5.89 ± 0.61) mm, respectively). The strain over the footprint area for the transtendon single-row repair was significantly smaller (P row repair. Also, it had a higher mean ultimate tensile load and stiffness. For grade III partial articular-sided rotator cuff tears, transtendon single-row fixation exhibited superior biomechanical properties when compared with double-row fixation.

Double-Sided Terahertz Imaging of Multilayered Glass Fiber-Reinforced Polymer

Directory of Open Access Journals (Sweden)

Przemyslaw Lopato

2017-06-01

Full Text Available Polymer matrix composites (PMC play important roles in modern industry. Increasing the number of such structures in aerospace, construction, and automotive applications enforces continuous monitoring of their condition. Nondestructive inspection of layered composite materials is much more complicated process than evaluation of homogenous, (mostly metallic structures. Several nondestructive methods are utilized in this case (ultrasonics, shearography, tap testing, acoustic emission, digital radiography, infrared imaging but none of them gives full description of evaluated structures. Thus, further development of NDT techniques should be studied. A pulsed terahertz method seems to be a good candidate for layered PMC inspection. It is based on picosecond electromagnetic pulses interacting with the evaluated structure. Differences of dielectric parameters enables detection of a particular layer in a layered material. In the case of multilayered structures, only layers close to surface can be detected. The response of deeper ones is averaged because of multiple reflections. In this paper a novel inspection procedure with a data processing algorithm is introduced. It is based on a double-sided measurement, acquired signal deconvolution, and data combining. In order to verify the application of the algorithm stress-subjected glass fiber-reinforced polymer (GFRP was evaluated. The obtained results enabled detection and detailed analysis of delaminations introduced by stress treatment and proved the applicability of the proposed algorithm.

Numerical simulation of heat transfer and fluid flow during double-sided laser beam welding of T-joints for aluminum aircraft fuselage panels

Science.gov (United States)

Yang, Zhibin; Tao, Wang; Li, Liqun; Chen, Yanbin; Shi, Chunyuan

2017-06-01

In comparison with conventional laser beam welding, double-sided laser beam welding has two laser heat sources simultaneously and symmetrically loaded from both sides makes it to be a more complicated coupled heat transport and fluid flow process. In this work, in order to understand the heat transfer and fluid flow, a three-dimensional model was developed and validated with the experimental results. The temperature field, fluid flow field, and keyhole characteristic were calculated using the developed model by FLUENT software. Calculated results indicated that the temperature and fluid flow fields were bilateral symmetry along the stringer center, and the molten pool maximum length was located near the keyhole intersection position. The skin side had higher temperature and faster cooling speed. Several characteristic flow patterns in the weld pool cross section, including the vortexes flows near the keyhole opening position, the convection flows above the keyhole intersection location, the regularity downward flows at the molten pool bottom. And in the lengthwise section, a distinct vortex flow below the keyhole, and the liquid metal behind the keyhole first flowed to near the molten pool maximum length location and then to the molten pool surface. Perpendicular to and along welding direction the keyhole liquid metal flowed to the weld molten pool surface and around the keyhole, respectively. The special temperature fields and fluid flow patterns were closely related to the effects of the double sides' laser energy coupling and enhancement. The calculated weld pool geometry basically in good agreement with the experimental results indicated that the developed model was validity and reasonable.

Commissioning of the scatter component of a Compton camera consisting of a stack of Si strip detectors

Energy Technology Data Exchange (ETDEWEB)

Liprandi, S.; Marinsek, T.; Bortfeldt, J.; Lang, C.; Lutter, R.; Dedes, G.; Parodi, K.; Thirolf, P.G. [LMU Munich, Garching (Germany); Aldawood, S. [LMU Munich, Garching (Germany); King Saud University, Riyadh (Saudi Arabia); Maier, L.; Gernhaeuser, R. [TU Munich, Garching (Germany); Kolff, H. van der [LMU Munich, Garching (Germany); TU Delft (Netherlands); Castelhano, I. [LMU Munich, Garching (Germany); University of Lisbon, Lisbon (Portugal); Schaart, D.R. [TU Delft (Netherlands)

2015-07-01

At LMU Munich in Garching a Compton camera is presently being developed aiming at the range verification of proton (or ion) beams for hadron therapy via imaging of prompt γ rays from nuclear reactions in the tissue. The poster presentation focuses on the characterization of the scatter component of the Compton camera, consisting of a stack of six double-sided Si strip detectors (50 x 50 mm{sup 2}, 0.5 mm thick, 128 strips/side). The overall 1536 electronics channels are processed by a readout system based on the GASSIPLEX ASIC chip, feeding into a VME-based data acquisition system. The status of the offline and online characterization studies is presented.

Transverse Tensile Properties of 3 Dimension-4 Directional Braided Cf/SiC Composite Based on Double-Scale Model

Science.gov (United States)

Niu, Xuming; Sun, Zhigang; Song, Yingdong

2017-11-01

In this thesis, a double-scale model for 3 Dimension-4 directional(3D-4d) braided C/SiC composites(CMCs) has been proposed to investigate mechanical properties of it. The double-scale model involves micro-scale which takes fiber/matrix/porosity in fibers tows into consideration and the unit cell scale which considers the 3D-4d braiding structure. Basing on the Micro-optical photographs of composite, we can build a parameterized finite element model that reflects structure of 3D-4d braided composites. The mechanical properties of fiber tows in transverse direction are studied by combining the crack band theory for matrix cracking and cohesive zone model for interface debonding. Transverse tensile process of 3D-4d CMCs can be simulated by introducing mechanical properties of fiber tows into finite element of 3D-4d braided CMCs. Quasi-static tensile tests of 3D-4d braided CMCs have been performed with PWS-100 test system. The predicted tensile stress-strain curve by the double scale model finds good agreement with the experimental results.

Fabrication and measurement of a 10x scale model of a double-sided planar mm-wave linac cavity structure

International Nuclear Information System (INIS)

Kang, Y.W.; Matthews, P.; Nassiri, A.; Kustom, R.L.

1994-01-01

A double-sided planar mm-wave linear accelerating cavity, structure has been investigated. An 80-cell constant impedance structure working with 2π/3-mode traveling wave was chosen as an accelerator section. A 10x scale model of the structure has been fabricated and the basic electrical performances have been tested. The nodal shift measurement technique with a rectangular detuning plunger was used to measure the phase advance between the cells with a vector network analyzer

Resonance spiking by periodic loss in the double-sided liquid cooling disk oscillator

Science.gov (United States)

Nie, Rongzhi; She, Jiangbo; Li, Dongdong; Li, Fuli; Peng, Bo

2017-03-01

A double-sided liquid cooling Nd:YAG disk oscillator working at a pump repetition rate of 20 Hz is demonstrated. The output energy of 376 mJ is realized, corresponding to the optical-optical efficiency of 12.8% and the slope efficiency of 14%. The pump pulse width is 300 µs and the laser pulse width is 260 µs. Instead of being a damped signal, the output of laser comprises undamped spikes. A periodic intra-cavity loss was found by numerical analysis, which has a frequency component near the eigen frequency of the relaxation oscillation. Resonance effect will induce amplified spikes even though the loss fluctuates in a small range. The Shark-Hartmann sensor was used to investigate the wavefront aberration induced by turbulent flow and temperature gradient. According to the wavefront and fluid mechanics analysis, it is considered that the periodic intra-cavity loss can be attributed to turbulent flow and temperature gradient.

Scintigraphic diagnosis of silent aspiration following double-sided lung transplantation; Szintigraphischer Nachweis einer stillen Aspiration nach beidseitiger Lungentransplantation

Energy Technology Data Exchange (ETDEWEB)

Toenshoff, G. [Kiel Univ. (Germany). Klinik fuer Nuklearmedizin; Stock, U. [Kiel Univ. (Germany). Klinik fuer Herz- und Gefaesschirurgie; Bohuslavizki, K.H. [Kiel Univ. (Germany). Klinik fuer Nuklearmedizin; Brenner, W. [Kiel Univ. (Germany). Klinik fuer Nuklearmedizin; Costard-Jaeckle, A. [Kiel Univ. (Germany). Klinik fuer Herz- und Gefaesschirurgie; Cremer, J. [Kiel Univ. (Germany). Klinik fuer Herz- und Gefaesschirurgie; Clausen, M. [Kiel Univ. (Germany). Klinik fuer Nuklearmedizin

1996-08-01

We present a case of a 25 year old patient who underwent double-sided lung transplantation and suffered from recurrent pneumonia. Silent aspiration was suspected clinically. Aspiration was proved by scintigraphy enabling to discriminate between direct oro-pulmonal aspiration and aspiration after gastro-esophageal reflux. (orig.) [Deutsch] Vorgestellt wird der Fall einer 25jaehrigen Patientin nach beidseitiger Lungentransplantation und rezidivierenden Pneumonien. Klinisch bestand der Verdacht auf eine stille Aspiration. Szintigraphisch gelang sowohl der Aspirationsnachweis als auch eine Differenzierung hinsichtlich der Genese: Direkte oro-pulmonale Aspiration versus Aspiration nach gastrooesophagealem Reflux. (orig.)

Fabrication of double-dot single-electron transistor in silicon nanowire

International Nuclear Information System (INIS)

Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

2010-01-01

We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot

Energy Technology Data Exchange (ETDEWEB)

Ichikawa, Kazunori; Punchaipetch, Prakaipetch; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi [Nara Institute of Science and Techonology, Ikoma, Nara (Japan); Tomyo, Atsushi; Takahashi, Eiji; Hayashi, Tsukasa; Ogata, Kiyoshi [Nissin Electric Co., Ltd., Kyoto (Japan)

2006-08-15

We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO{sub 2} at a low temperature of 430 .deg. C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 X 10{sup 11} cm{sup -2}, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO{sub 2} fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.

Thickness dependent formation and properties of GdSi2/Si(100) interfaces

International Nuclear Information System (INIS)

Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

2005-01-01

Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Science.gov (United States)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

A novel injectable thermoresponsive and cytocompatible gel of poly(N-isopropylacrylamide) with layered double hydroxides facilitates siRNA delivery into chondrocytes in 3D culture

NARCIS (Netherlands)

Yang, H.Y.; Ee, R.J. van; Timmer, K.; Craenmehr, E.G.M.; Huang, J.H.; Öner, C.; Dhert, W.J.A.; Kragten, A.H.M.; Willems, N.; Grinwis, G.C.M.; Tryfonidou, M.A.; Papen-Botterhuis, N.E.; Creemers, L.B.

2015-01-01

Hybrid hydrogels composed of poly(N-isopropylacrylamide) (pNIPAAM) and layered double hydroxides (LDHs) are presented in this study as novel injectable and thermoresponsive materials for siRNA delivery, which could specifically target several negative regulators of tissue homeostasis in

A novel injectable thermoresponsive and cytocompatible gel of poly(N-isopropylacrylamide) with layered double hydroxides facilitates siRNA delivery into chondrocytes in 3D culture

NARCIS (Netherlands)

Yang, Hsiao-yin; van Ee, Renz J; Timmer, Klaas; Craenmehr, Eric G M; Huang, Julie H; Oner, F. Cumhur; Dhert, Wouter J A; Kragten, Angela H M; Willems, Nicole; Grinwis, Guy C M; Tryfonidou, Marianna A; Papen-Botterhuis, Nicole E; Creemers, Laura B

Hybrid hydrogels composed of poly(N-isopropylacrylamide) (pNIPAAM) and layered double hydroxides (LDHs) are presented in this study as novel injectable and thermoresponsive materials for siRNA delivery, which could specifically target several negative regulators of tissue homeostasis in

Incomplete charge collection in an HPGe double-sided strip detector

International Nuclear Information System (INIS)

Hayward, Jason; Wehe, David

2008-01-01

For gamma-ray detection, high-purity germanium (HPGe) has long been the standard for energy resolution, and double-sided strip detectors (DSSDs) offer the possibility of sub-millimeter position resolution. Our HPGe DSSD is 81 mm in diameter, 11-mm thick, and has 3-mm strip pitch with a gap width of 500 μm. In this work, we focus on characterizing just the interactions that occur between collecting strips. Simulation and measurement results for our HPGe DSSD show that the gap between strips is the most position-sensitive region. But, spectra collected from events that occur in and near the gaps are complicated by: (1) incomplete charge-carrier collection, or charge loss; (2) signal variance introduced by charge-carrier cloud size, orientation, and lateral spreading; and (3) the difficulty of distinguishing single interactions from multiple close interactions. Using tightly, collimated beams of monoenergetic gamma rays, the measured energy spectra at the gap center show that incomplete charge collection is significant in our detector at 356 and 662 keV, resulting in degradation of the photopeak efficiency. Additionally, close interactions are identifiable in the spectra. Thus, close interactions must be identified on an event-by-event basis in order to precisely identify gap interaction position or make charge-loss corrections at these energies. Furthermore, spectral differences are observed between anode and cathode gaps, and a possible reason for this asymmetry is proposed

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

2014-11-21

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

2014-01-01

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Buytaert, J.; Chabaud, V.; Chochula, P.; Collins, P.; Dijkstra, H.; Niinikoski, T.O.; Lourenco, C.; Parkes, C.; Saladino, S.; Ruf, T.; Granata, V.; Pagano, S.; Vitobello, F.; Bell, W.; Bartalini, P.; Dormond, O.; Frei, R.; Casagrande, L.; Bowcock, T.; Barnett, I.B.M.; Da Via, C.; Konorov, I.; Paul, S.; Schmitt, L.; Ruggiero, G.; Stavitski, I.; Esposito, A.

2000-01-01

This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5x10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the 'Lazarus effect', can be related to similar recent observations on diode behaviour

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

Energy Technology Data Exchange (ETDEWEB)

Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.; Novikov, A. V.; Yurasov, D. V.; Shaleev, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-12-15

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15} layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

International Nuclear Information System (INIS)

Zhou, Y.M.; He, M.Z.; Xie, Z.

2014-01-01

Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

Double Fano resonances in plasmon coupling nanorods

International Nuclear Information System (INIS)

Liu, Fei; Jin, Jie

2015-01-01

Fano resonances are investigated in nanorods with symmetric lengths and side-by-side assembly. Single Fano resonance can be obtained by a nanorod dimer, and double Fano resonances are shown in nanorod trimers with side-by-side assembly. With transverse plasmon excitation, Fano resonances are caused by the destructive interference between a bright superradiant mode and dark subradiant modes. The bright mode originates from the electric plasmon resonance, and the dark modes originate from the magnetic resonances induced by near-field inter-rod coupling. Double Fano resonances result from double dark modes at different wavelengths, which are induced and tuned by the asymmetric gaps between the adjacent nanorods. Fano resonances show a high figure of merit and large light extinction in the periodic array of assembled nanorods, which can potentially be used in multiwavelength sensing in the visible and near-infrared regions. (paper)

Performance of CMS TOB Silicon Detector Modules on a Double Sided Prototype ROD

CERN Document Server

Valls, Juan

2004-01-01

In this paper we summarize results of the performance of CMS TOB silicon detector modules mounted on the first assembled double-sided rod at CERN. Results are given in terms of noise, noise occupancies, signal to noise ratios and signal efficiencies. The noise figures from the rod optical setup are compared to the single module setup with electrical read out. Both test setups show a small or negligible common mode noise picked up by the modules. Similar noise results are obtained in both setups after full calibration gain values are applied. We measure total noise values of ~1600 electrons in peak mode and ~2600 electrons in deconvolution mode. Signal to noise ratios of the order of 15 (25) for deconvolution (peak) operation modes are found. The noise occupancies on the modules have important implications for the zero suppression algorithms which the CMS Tracker FEDs will use to reduce t he data volume flowing to the DAQ. The detector signal efficiencies and noise occupancies are also shown as a function of t...

Protective effects of persian honey, Apis Mellifera Meda Skorikov on side effects of chemotherapy and ischemia/reperfusion induced testicular injury.

Science.gov (United States)

Gholami, Mohammadreza; Abbaszadeh, Abolfazl; Baharvand, Parastoo; Hasanvand, Afshin; Hasanvand, Amin; Gharravi, Anneh Mohammad

2018-05-23

Introduction The aim of the present study was to survey the protective effect of pretreatment with Persian honey on amelioration of side effects of chemotherapy and ischemia/reperfusion induced testicular injury. Materials and methods Forty adult's male wistar rats were divided into four groups of ischemia-reperfusion (IR), honey + ischemia-reperfusion (HIR), Busulfan (B) and Busulfan intraperitoneally+ honey (BH). The seminiferous tubules were rated for their modified spermatogenesis index (SI) by Johnsons score. Detection of single- and double-stranded DNA breaks at the early stages of apoptosis was performed using the in-situ cell death detection kit. Total serum concentration of Follicle-stimulating hormone (FSH) , Luteinizing hormone (LH) and testosterone was measured using ELISA. All data were expressed as mean ± SD and significance was set at p≤0.05. Results Honey improved SI in the HIR and BH groups and serum levels of FSH and LH in the BH and HIR groups (phoney protect testis against chemotherapy and testicular IR injury, increase FSH and LH and testosterone and decrease the cellular damage and apoptosis. Honey can decrease the side effects of chemotherapy on reproductive system and prevent sterility.

Association between the side of unilateral shoulder pain and preferred sleeping position

DEFF Research Database (Denmark)

Kempf, Bo; Kongsted, Alice

2012-01-01

The purpose of this study was to evaluate if there is an association between the side of unilateral shoulder pain and the patient's preferred sleeping position and if the preferred sleeping position is related to which side of a double bed one lies in.......The purpose of this study was to evaluate if there is an association between the side of unilateral shoulder pain and the patient's preferred sleeping position and if the preferred sleeping position is related to which side of a double bed one lies in....

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

International Nuclear Information System (INIS)

Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L.

2009-01-01

Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼10 4 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated

Stationary Double Layers in a Collisionless Magnetoplasma

DEFF Research Database (Denmark)

Noriyoshi, Sato; Mieno, Tetsu; Hatakeyama, Rikizo

1983-01-01

of the plate on the low-potential side, being accompanied with current limitation. This localized potential drop moves along the plasma column, but finally stops and results in the formation of the stationary double layer in the presence of sufficient plasma supply from the plate on the high-potential side.......Stationary double layers are generated in a magnetoplasma by applying potential differences between two heated plates on which the plasma is produced by surface ionization. By measuring the double-layer formation process, a localized potential drop is found to be formed initially in front...

Effect of multiple plasmon excitation on single, double and multiple ionizations of C{sub 60} in collisions with fast highly charged Si ions

Energy Technology Data Exchange (ETDEWEB)

Kelkar, A H; Kadhane, U; Misra, D; Kumar, A; Tribedi, L C [Tata Institute of Fundamental Research, Colaba, Mumbai -5 (India)

2007-06-28

We have investigated the single and multiple ionizations of the C{sub 60} molecule in collisions with fast Si{sup q+} projectiles for various projectile charge states (q) between q = 6 and 14. The q-dependence of the ionization cross sections and their ratios is compared with the giant dipole plasmon resonance (GDPR) model. The excellent qualitative agreement with the model in case of single and double ionizations and also a reasonable agreement with the triple (and to some extent with quadruple) ionization (without evaporation) yields signify dominant contributions of the single-, double- and triple-plasmon excitations on the single- and multiple-ionization process.

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

International Nuclear Information System (INIS)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

2014-01-01

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process

Double crystal X-ray analysis of phosphorus precipitation in supersaturated Si-P solid solutions

International Nuclear Information System (INIS)

Servidori, M.; Zini, Q.; Dal Monte, C.

1983-01-01

The physical nature of the electrically inactive phosphorus in silicon is investigated by double crystal X-ray diffraction measurements. This analysis is performed on laser annealed supersaturated samples, doped by ion implantation up to 5 x 10 21 cm -3 . After isothermal heat treatments, these solid solutions show marked reductions in the electrically active phosphorus concentration. In particular, 850 0 C heatings give rise to a carrier concentration which corresponds to the phosphorus solubility in equilibrium with the inactive dopant. This dopant is characterized by means of lattice strain measurements: they are found consistent with the presence of perfectly coherent cubic SiP precipitates. This result is in agreement with the one obtained in preceeding works by electrical measurements and transmission electron microscopy observations and contradicts the hypothesis that the excess dopant atoms are, at least in part, charged point defects (E-centres). (author)

β-delayed charged particle decays of neutron-deficient nuclei 20Mg and 23Si and 22Si

International Nuclear Information System (INIS)

Babo, Mathieu

2016-01-01

The neutron-deficient nuclei 20 Mg, 23 Si and 22 Si were produced by fragmentation at NSCL, at MSU (USA), and implanted into an array of 3 double sided stripped Si detectors, surrounded by 16 high-purity Ge detectors. This novel arrangement allowed the detection of the charged particles emitted by the unbound excited states in coincidence with the γ rays emitted by the de-excitation of the daughter. The βp decay of 20 Mg is very well-known and therefore was used to test and optimize the analysis program. The β-delayed proton transitions to the first 3 excited states in 19 Ne were identified and compared to previous measurements. The half-life, the branching ratio of the transitions and the excitation energies, including the IAS, were measured and are in good agreement with the adopted values. The study of the β+ decay of 23 Si allowed the identification of 14 excited states in 23 Al. The emission of 2 protons from the IAS was unambiguously identified. The measurement of the IAS energy allowed a better determination of the mass excess of 23 Si, giving 23.27 (7) MeV. A possible β3p decay channel was also tentatively identified. Most of the theoretical predictions are in favor of a 2-proton radioactive 22 Si. The β2p decays to the first excited state and the ground state of 20 Na were identified. The branching ratio of the decay to the IAS is 2.05 (44) %, and the IAS excitation energy was measured to be 9040 (54) keV. The additional measurement of the half-life gives T 1/2 = 30.38 (45) ms, and allowed the determination of the partial half-life. In this study, we propose a parameterization of the statistical rate function f for the superallowed Fermi β decays. This allow the first indirect mass measurement of 22 Si ground state, 31.49 (14) MeV. The two-proton threshold is then S2p = 645 (100) keV and does not allow 2p radioactivity. (author) [fr

Grafting cavitands on the Si(100) surface.

Science.gov (United States)

Condorelli, Guglielmo G; Motta, Alessandro; Favazza, Maria; Fragalà, Ignazio L; Busi, Marco; Menozzi, Edoardo; Dalcanale, Enrico; Cristofolini, Luigi

2006-12-19

Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si-C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.

Fiber-Based, Double-Sided, Reduced Graphene Oxide Films for Efficient Solar Vapor Generation.

Science.gov (United States)

Guo, Ankang; Ming, Xin; Fu, Yang; Wang, Gang; Wang, Xianbao

2017-09-06

Solar vapor generation is a promising and whole new branch of photothermal conversion for harvesting solar energy. Various materials and devices for solar thermal conversion were successively produced and reported for higher solar energy utilization in the past few years. Herein, a compact device of reduced graphene oxides (rGO) and paper fibers was designed and assembled for efficient solar steam generation under light illumination, and it consists of water supply pipelines (WSP), a thermal insulator (TI) and a double-sided absorbing film (DSF). Heat localization is enabled by the black DSF due to its broad absorption of sunlight. More importantly, the heat transfer, from the hot DSF to the cold base fluid (water), was suppressed by TI with a low thermal conductivity. Meanwhile, bulk water was continuously transported to the DSF by WSP through TI, which was driven by the surface energy and surface tension based on the capillary effect. The effects of reduction degrees of rGO on the photothermal conversion were explored, and the evaporation efficiency reached 89.2% under one sun with 60 mg rGO. This new microdevice provided a basic technical support for distillation, desalination, sewage treatment, and related technologies.

Portable double-sided pulsed laser heating system for time-resolved geoscience and materials science applications.

Science.gov (United States)

Aprilis, G; Strohm, C; Kupenko, I; Linhardt, S; Laskin, A; Vasiukov, D M; Cerantola, V; Koemets, E G; McCammon, C; Kurnosov, A; Chumakov, A I; Rüffer, R; Dubrovinskaia, N; Dubrovinsky, L

2017-08-01

A portable double-sided pulsed laser heating system for diamond anvil cells has been developed that is able to stably produce laser pulses as short as a few microseconds with repetition frequencies up to 100 kHz. In situ temperature determination is possible by collecting and fitting the thermal radiation spectrum for a specific wavelength range (particularly, between 650 nm and 850 nm) to the Planck radiation function. Surface temperature information can also be time-resolved by using a gated detector that is synchronized with the laser pulse modulation and space-resolved with the implementation of a multi-point thermal radiation collection technique. The system can be easily coupled with equipment at synchrotron facilities, particularly for nuclear resonance spectroscopy experiments. Examples of applications include investigations of high-pressure high-temperature behavior of iron oxides, both in house and at the European Synchrotron Radiation Facility using the synchrotron Mössbauer source and nuclear inelastic scattering.

Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers

International Nuclear Information System (INIS)

Sultan, D.M.S.; Mendicino, R.; Betta, G.-F. Dalla; Boscardin, M.; Ronchin, S.; Zorzi, N.

2015-01-01

Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades

SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

International Nuclear Information System (INIS)

Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

2007-01-01

We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60x60x1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5x5x6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ∼1 mm diameter 22 Na source, showed a focal ray tracing FWHM of 1 mm

Pion double charge exchange

International Nuclear Information System (INIS)

Cooper, M.D.

1978-01-01

The pion double charge exchange data on the oxygen isotopes is reviewed and new data on 9 Be, 12 C, 24 Mg, and 28 Si are presented. Where theoretical calculations exist, they are compared to the data. 9 references

Recent results from a Si/CdTe semiconductor Compton telescope

International Nuclear Information System (INIS)

Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Oonuki, Kousuke; Mitani, Takefumi; Nakazawa, Kazuhiro; Takashima, Takeshi; Takahashi, Tadayuki; Tajima, Hiroyasu; Sawamoto, Naoyuki; Fukazawa, Yasushi; Nomachi, Masaharu

2006-01-01

We are developing a Compton telescope based on high-resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors (DSSDs) and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9 o (FWHM) at 511keV, and the energy resolution is 14keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating 137 Cs source, we successfully obtained an image and a spectrum of 662keV line emission with this method. As a next step, development of larger DSSDs with a size of 4cmx4cm is under way to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well

Robust Deterministic Controlled Phase-Flip Gate and Controlled-Not Gate Based on Atomic Ensembles Embedded in Double-Sided Optical Cavities

Science.gov (United States)

Liu, A.-Peng; Cheng, Liu-Yong; Guo, Qi; Zhang, Shou

2018-02-01

We first propose a scheme for controlled phase-flip gate between a flying photon qubit and the collective spin wave (magnon) of an atomic ensemble assisted by double-sided cavity quantum systems. Then we propose a deterministic controlled-not gate on magnon qubits with parity-check building blocks. Both the gates can be accomplished with 100% success probability in principle. Atomic ensemble is employed so that light-matter coupling is remarkably improved by collective enhancement. We assess the performance of the gates and the results show that they can be faithfully constituted with current experimental techniques.

Reaction phases and diffusion paths in SiC/metal systems

Energy Technology Data Exchange (ETDEWEB)

Naka, M.; Fukai, T. [Osaka Univ., Osaka (Japan); Schuster, J.C. [Vienna Univ., Vienna (Austria)

2004-07-01

The interface structures between SiC and metal are reviewed at SiC/metal systems. Metal groups are divided to carbide forming metals and non-carbide forming metals. Carbide forming metals form metal carbide granular or zone at metal side, and metal silicide zone at SiC side. The further diffusion of Si and C from SiC causes the formation of T ternary phase depending metal. Non-carbide forming metals form silicide zone containing graphite or the layered structure of metal silicide and metal silicide containing graphite. The diffusion path between SiC and metal are formed along tie-lines connecting SiC and metal on the corresponding ternary Si-C-M system. The reactivity of metals is dominated by the forming ability of carbide or silicide. Te reactivity tendency of elements are discussed on the periodical table of elements, and Ti among elements shows the highest reactivity among carbide forming metals. For non-carbide forming metals the reactivity sequence of metals is Fe>Ni>Co. (orig.)

Electronic structure and bonding in the ternary silicide YNiSi3

International Nuclear Information System (INIS)

Sung, Gi Hong; Kang, Dae Bok

2003-01-01

An analysis of the electronic structure and bonding in the ternary silicide YNiSi 3 is made, using extended Hueckel tight-binding calculations. The YNiSi 3 structure consists of Ni-capped Si 2 dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of (Y 3+ )(Ni 0 )(Si 3 ) 3- for YNiSi 3 constitutes a good starting point to describe its electronic structure. Si atoms receive electrons form the most electropositive Y in YNiSi 3 , and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the π orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi 3 can be rewritten as (Y 3+ )(Ni 2- )(Si 2- )(Si-Si) + , making the Si 2 layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si 2 double layer possesses single bonds within a dimer with a partial double bond character. Stronger Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si 2 π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis

The effect of Si content on the fracture toughness of CrAlN/Si3N4 coatings

International Nuclear Information System (INIS)

Liu, S.; Wheeler, J. M.; Davis, C. E.; Clegg, W. J.; Zeng, X. T.

2016-01-01

CrAlN/Si 3 N 4 nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si 3 N 4 coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries

Study on a high thrust force bi-double-sided permanent magnet linear synchronous motor

Directory of Open Access Journals (Sweden)

Liang Tong

2016-03-01

Full Text Available A high thrust force bi-double-sided permanent magnet linear synchronous motor used in gantry-type five-axis machining center is designed and its performance was tested in this article. This motor is the subproject of Chinese National Science and Technology Major Project named as “development of domestic large thrust linear motor used in high-speed gantry-type five-axis machining center project” jointly participated by enterprises and universities. According to the requirement of the application environment and motor performance parameters, the linear motor’s basic dimensions, form of windings, and magnet arrangement are preliminarily specified through theoretical analysis and calculation. To verify the correctness of the result of the calculation, the finite element model of the motor is established. The static and dynamic characteristics of the motor are studied and analyzed through the finite element method, and the initial scheme is revised. The prototype of the motor is manufactured based on the final revised structure parameters, and the performance of the motor is fully tested using the evaluation platform for direct-drive motor component. Experimental test results meet the design requirements and show the effectiveness of design method and process.

Performance bounds for sparse signal reconstruction with multiple side information [arXiv

DEFF Research Database (Denmark)

Luong, Huynh Van; Seiler, Jurgen; Kaup, Andre

2016-01-01

In the context of compressive sensing (CS), this paper considers the problem of reconstructing sparse signals with the aid of other given correlated sources as multiple side information (SI). To address this problem, we propose a reconstruction algorithm with multiple SI (RAMSI) that solves...

In-situ construction of Au nanoparticles confined in double-shelled TiO2/mSiO2 hollow architecture for excellent catalytic activity and enhanced thermal stability

Science.gov (United States)

Fang, Jiasheng; Zhang, Yiwei; Zhou, Yuming; Zhang, Chao; Zhao, Shuo; Zhang, Hongxing; Sheng, Xiaoli

2017-01-01

A facile strategy has been developed for the synthesis of H-TS-Au microspheres (MCs) with double-shelled hollow architecture and sub-5 nm Au nanoparticles (Au NPs). The synthetic procedure involves the successive sol-gel template-assisted method for the preparation of uniform hierarchical hollow-in-hollow H-TS MCs with TiO2/mSiO2 as yolks/shells, and the unique deposition-precipitation method mediated with Au(en)2Cl3 precursors for the in-situ construction of extremely stable Au NPs under a low-temperature hydrogen reduction. The synthesized H-TS-Au MCs were characterized by TEM, SEM, FTIR, XRD, BET and UV-vis absorption spectra. Catalytic activity of H-TS-Au was evaluated using the reduction of 4-nitrophenol (4-NP) into 4-aminophenol (4-AP) by NaBH4. Results established that H-TS-Au MCs possessed a large-size double-shelled architecture with high structural integrity and robustness,which can effectively confine numerous tiny Au NPs and restrict them from sintering aggregation even up to further calcination at 800 °C. Owing to the advantageous structural configuration and the synergistic effect of TiO2/mSiO2 double shells, the H-TS-Au MCs were demonstrated to exhibit a remarkable catalytic activity and stability, and preserve the intact morphology after 6 repeating reduction of 4-NP.

Solid-state compound phase formation of TiSi₂ thin films under stress

Directory of Open Access Journals (Sweden)

C. Theron

2010-02-01

Full Text Available Different stress situations were created on an Si(100 wafer by depositing either Si₃N₄ or SiO₂ thin films on the back side. Si₃N₄ has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si₃N₄-deposited samples and SiO₂-deposited samples.

Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

Science.gov (United States)

Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

Congenital maxillary double lip

Directory of Open Access Journals (Sweden)

Dinesh Singh Chauhan

2012-01-01

Full Text Available Double lip, also referred to as "macrocheilia," is a rare anomaly which affects the upper lip more commonly than the lower lip. It consists of a fold of excess or redundant hypertrophic tissue on the mucosal side of the lip. The congenital double lip is believed to be present at birth and becomes more prominent after eruption of teeth. It affects esthetics and also interferes with speech and mastication. Simple surgical excision produces good functional and cosmetic results. We report a case of a non-syndromic congenital maxillary double lip in a 21-year-old male patient.

Side-effects of topical steroids: A long overdue revisit

OpenAIRE

Coondoo, Arijit; Phiske, Meghana; Verma, Shyam; Lahiri, Koushik

2014-01-01

The introduction of topical steroids (TS) of varying potency have rendered the therapy of inflammatory cutaneous disorders more effective and less time-consuming. However the usefulness of these has become a double edged sword with constantly rising instances of abuse and misuse leading to serious local, systemic and psychological side effects. These side effects occur more with TS of higher potency and on particular areas of the body like face and genitalia. The article reviews the side effe...

Hole spin coherence in a Ge/Si heterostructure nanowire

DEFF Research Database (Denmark)

Higginbotham, Andrew P; Larsen, Thorvald Wadum; Yao, Jun

2014-01-01

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnit......Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order...

Assembling surface mounted components on ink-jet printed double sided paper circuit board

International Nuclear Information System (INIS)

Andersson, Henrik A; Manuilskiy, Anatoliy; Haller, Stefan; Sidén, Johan; Nilsson, Hans-Erik; Hummelgård, Magnus; Olin, Håkan; Hummelgård, Christine

2014-01-01

Printed electronics is a rapidly developing field where many components can already be manufactured on flexible substrates by printing or by other high speed manufacturing methods. However, the functionality of even the most inexpensive microcontroller or other integrated circuit is, at the present time and for the foreseeable future, out of reach by means of fully printed components. Therefore, it is of interest to investigate hybrid printed electronics, where regular electrical components are mounted on flexible substrates to achieve high functionality at a low cost. Moreover, the use of paper as a substrate for printed electronics is of growing interest because it is an environmentally friendly and renewable material and is, additionally, the main material used for many packages in which electronics functionalities could be integrated. One of the challenges for such hybrid printed electronics is the mounting of the components and the interconnection between layers on flexible substrates with printed conductive tracks that should provide as low a resistance as possible while still being able to be used in a high speed manufacturing process. In this article, several conductive adhesives are evaluated as well as soldering for mounting surface mounted components on a paper circuit board with ink-jet printed tracks and, in addition, a double sided Arduino compatible circuit board is manufactured and programmed. (paper)

Assembling surface mounted components on ink-jet printed double sided paper circuit board.

Science.gov (United States)

Andersson, Henrik A; Manuilskiy, Anatoliy; Haller, Stefan; Hummelgård, Magnus; Sidén, Johan; Hummelgård, Christine; Olin, Håkan; Nilsson, Hans-Erik

2014-03-07

Printed electronics is a rapidly developing field where many components can already be manufactured on flexible substrates by printing or by other high speed manufacturing methods. However, the functionality of even the most inexpensive microcontroller or other integrated circuit is, at the present time and for the foreseeable future, out of reach by means of fully printed components. Therefore, it is of interest to investigate hybrid printed electronics, where regular electrical components are mounted on flexible substrates to achieve high functionality at a low cost. Moreover, the use of paper as a substrate for printed electronics is of growing interest because it is an environmentally friendly and renewable material and is, additionally, the main material used for many packages in which electronics functionalities could be integrated. One of the challenges for such hybrid printed electronics is the mounting of the components and the interconnection between layers on flexible substrates with printed conductive tracks that should provide as low a resistance as possible while still being able to be used in a high speed manufacturing process. In this article, several conductive adhesives are evaluated as well as soldering for mounting surface mounted components on a paper circuit board with ink-jet printed tracks and, in addition, a double sided Arduino compatible circuit board is manufactured and programmed.

Assembling surface mounted components on ink-jet printed double sided paper circuit board

Energy Technology Data Exchange (ETDEWEB)

Andersson, Henrik A; Manuilskiy, Anatoliy; Haller, Stefan; Sidén, Johan; Nilsson, Hans-Erik [Department of Electronics Design, Mid Sweden University, SE-851 70 Sundsvall (Sweden); Hummelgård, Magnus; Olin, Håkan [Department of Natural Science, Mid Sweden University, SE-851 70 Sundsvall (Sweden); Hummelgård, Christine [Acreo Swedish ICT AB, Håstaholmen 4, SE-824 42 Hudiksvall (Sweden)

2014-03-07

Printed electronics is a rapidly developing field where many components can already be manufactured on flexible substrates by printing or by other high speed manufacturing methods. However, the functionality of even the most inexpensive microcontroller or other integrated circuit is, at the present time and for the foreseeable future, out of reach by means of fully printed components. Therefore, it is of interest to investigate hybrid printed electronics, where regular electrical components are mounted on flexible substrates to achieve high functionality at a low cost. Moreover, the use of paper as a substrate for printed electronics is of growing interest because it is an environmentally friendly and renewable material and is, additionally, the main material used for many packages in which electronics functionalities could be integrated. One of the challenges for such hybrid printed electronics is the mounting of the components and the interconnection between layers on flexible substrates with printed conductive tracks that should provide as low a resistance as possible while still being able to be used in a high speed manufacturing process. In this article, several conductive adhesives are evaluated as well as soldering for mounting surface mounted components on a paper circuit board with ink-jet printed tracks and, in addition, a double sided Arduino compatible circuit board is manufactured and programmed. (paper)

The "Double" Tessier 7 Cleft: An Unusual Presentation of a Transverse Facial Cleft.

Science.gov (United States)

Raveendran, Janani A; Chao, Jerry W; Rogers, Gary F; Boyajian, Michael J

2018-07-01

Congenital macrostomia, or Tessier number 7 cleft, is a rare craniofacial anomaly. We present a unique patient with bilateral macrostomia that consisted of a "double" transverse cleft on the left side and a single transverse cleft on the right side. A staged reconstructive approach was used to repair the "double" left-sided clefts. This staged technique produced a satisfactory aesthetic and functional outcome.

Y2O3:Yb,Er@mSiO2-CuxS double-shelled hollow spheres for enhanced chemo-/photothermal anti-cancer therapy and dual-modal imaging

Science.gov (United States)

Yang, Dan; Yang, Guixin; Wang, Xingmei; Lv, Ruichan; Gai, Shili; He, Fei; Gulzar, Arif; Yang, Piaoping

2015-07-01

Multifunctional composites have gained significant interest due to their unique properties which show potential in biological imaging and therapeutics. However, the design of an efficient combination of multiple diagnostic and therapeutic modes is still a challenge. In this contribution, Y2O3:Yb,Er@mSiO2 double-shelled hollow spheres (DSHSs) with up-conversion fluorescence have been successfully prepared through a facile integrated sacrifice template method, followed by a calcination process. It is found that the double-shelled structure with large specific surface area and uniform shape is composed of an inner shell of luminescent Y2O3:Yb,Er and an outer mesoporous silica shell. Ultra small CuxS nanoparticles (about 2.5 nm) served as photothermal agents, and a chemotherapeutic agent (doxorubicin, DOX) was then attached onto the surface of mesoporous silica, forming a DOX-DSHS-CuxS composite. The composite exhibits high anti-cancer efficacy due to the synergistic photothermal therapy (PTT) induced by the attached CuxS nanoparticles and the enhanced chemotherapy promoted by the heat from the CuxS-based PTT when irradiated by 980 nm near-infrared (NIR) light. Moreover, the composite shows excellent in vitro and in vivo X-ray computed tomography (CT) and up-conversion fluorescence (UCL) imaging properties owing to the doped rare earth ions, thus making it possible to achieve the target of imaging-guided synergistic therapy.Multifunctional composites have gained significant interest due to their unique properties which show potential in biological imaging and therapeutics. However, the design of an efficient combination of multiple diagnostic and therapeutic modes is still a challenge. In this contribution, Y2O3:Yb,Er@mSiO2 double-shelled hollow spheres (DSHSs) with up-conversion fluorescence have been successfully prepared through a facile integrated sacrifice template method, followed by a calcination process. It is found that the double-shelled structure with large

Diffusion in ordered Fe-Si alloys

International Nuclear Information System (INIS)

Sepiol, B.; Vogl, G.

1995-01-01

The measurement of the diffusional Moessbauer line broadening in single crystalline samples at high temperatures provides microscopic information about atomic jumps. We can separate jumps of iron atoms between the various sublattices of Fe-Si intermetallic alloys (D0 3 structure) and measure their frequencies. The diffusion of iron in Fe-Si samples with Fe concentrations between 75 and 82 at% shows a drastic composition dependence: the jump frequency and the proportion between jumps on Fe sublattices and into antistructure (Si) sublattice positions change greatly. Close to Fe 3 Si stoichiometry iron diffusion is extremely fast and jumps are performed exclusively between the three Fe sublattices. The change in the diffusion process when changing the alloy composition from stoichiometric Fe 3 Si to the iron-rich side is discussed. (orig.)

Side-effects of topical steroids: A long overdue revisit.

Science.gov (United States)

Coondoo, Arijit; Phiske, Meghana; Verma, Shyam; Lahiri, Koushik

2014-10-01

The introduction of topical steroids (TS) of varying potency have rendered the therapy of inflammatory cutaneous disorders more effective and less time-consuming. However the usefulness of these has become a double edged sword with constantly rising instances of abuse and misuse leading to serious local, systemic and psychological side effects. These side effects occur more with TS of higher potency and on particular areas of the body like face and genitalia. The article reviews the side effects of TS with special mention about peadiatric age group, also includes the measures for preventing the side effects.

Side-effects of topical steroids: A long overdue revisit

Directory of Open Access Journals (Sweden)

Arijit Coondoo

2014-01-01

Full Text Available The introduction of topical steroids (TS of varying potency have rendered the therapy of inflammatory cutaneous disorders more effective and less time-consuming. However the usefulness of these has become a double edged sword with constantly rising instances of abuse and misuse leading to serious local, systemic and psychological side effects. These side effects occur more with TS of higher potency and on particular areas of the body like face and genitalia.The article reviews the side effects of TS with special mention about peadiatric age group, also includes the measures for preventing the side effects.

Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Science.gov (United States)

Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

2017-09-01

In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

siRNA transfection in larvae of the barnacle Amphibalanus amphitrite

KAUST Repository

Zhang, G.

2015-06-25

RNA interference (RNAi) provides an efficient and specific technique for functional genomic studies. Yet, no successful application of RNAi has been reported in barnacles. In this study, siRNA against p38 MAPK was synthesized and then transfected into A. amphitrite larvae at either the nauplius or cyprid stage, or at both stages. Effects of siRNA transfection on the p38 MAPK level were hardly detectable in the cyprids when they were transfected at the nauplius stage. In contrast, larvae that were transfected at the cyprid stage showed lower levels of p38 MAPK than the blank and reagent controls. However, significantly decreased levels of phosphorylated p38 MAPK (pp38 MAPK) and reduced settlement rates were observed only in ‘double transfections’, in which larvae were exposed to siRNA solution at both the nauplius and cyprid stages. A relatively longer transfection time and more larval cells directly exposed to siRNA might explain the higher efficiency of double transfection experiments.

siRNA transfection in larvae of the barnacle Amphibalanus amphitrite

KAUST Repository

Zhang, G.; He, L.-S.; Wong, Y. H.; Yu, L.; Qian, P.-Y.

2015-01-01

RNA interference (RNAi) provides an efficient and specific technique for functional genomic studies. Yet, no successful application of RNAi has been reported in barnacles. In this study, siRNA against p38 MAPK was synthesized and then transfected into A. amphitrite larvae at either the nauplius or cyprid stage, or at both stages. Effects of siRNA transfection on the p38 MAPK level were hardly detectable in the cyprids when they were transfected at the nauplius stage. In contrast, larvae that were transfected at the cyprid stage showed lower levels of p38 MAPK than the blank and reagent controls. However, significantly decreased levels of phosphorylated p38 MAPK (pp38 MAPK) and reduced settlement rates were observed only in ‘double transfections’, in which larvae were exposed to siRNA solution at both the nauplius and cyprid stages. A relatively longer transfection time and more larval cells directly exposed to siRNA might explain the higher efficiency of double transfection experiments.

Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Xin, Bin; Zhang, Yu-Ming; Jia, Ren-Xu, E-mail: rxjia@mail.xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi' an 710071 (China); Wu, Hong-Ming [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Feng, Zhe Chuan [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 10617 Taipei, Taiwan and Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science and Technology, Guangxi University, Nanning 530004 (China); Lin, Hao-Hsiung [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 10617 Taipei, Taiwan (China)

2016-05-15

The authors investigated the kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy. A fourfold V-shaped twinning complex was found, and its interface was measured with high-resolution transmission electron microscopy (HRTEM). Two linear coherent boundaries and a nonlinear incoherent boundary (also called the double-position boundary) were observed. On the basis of the HRTEM results, the authors proposed an adatom migration growth model, in which the activation barrier at the coherent boundary is much lower than that at the incoherent boundary. From a kinetic perspective, adatoms are prone to migrate to the side of the boundary with the lower potential energy if they have sufficient thermal energy to overcome the activation barrier. In the case of a coherent boundary, the growth rates of the domains either side of the boundary can be balanced through the intermigration of adatoms, leading to a linear boundary. Conversely, it is difficult for adatoms to migrate across an incoherent boundary, which results in asynchronous growth rates and a nonlinear boundary.

Radiation-induced effects on the mechanical properties of natural ZrSiO4: double cascade-overlap damage accumulation

Science.gov (United States)

Beirau, Tobias; Nix, William D.; Pöllmann, Herbert; Ewing, Rodney C.

2017-11-01

Several different models are known to describe the structure-dependent radiation-induced damage accumulation process in materials (e.g. Gibbons Proc IEEE 60:1062-1096, 1972; Weber Nuc Instr Met Phys Res B 166-167:98-106, 2000). In the literature, two different models of damage accumulation due to α-decay events in natural ZrSiO4 (zircon) have been described. The direct impact damage accumulation model is based on amorphization occurring directly within the collision cascade. However, the double cascade-overlap damage accumulation model predicts that amorphization will only occur due to the overlap of disordered domains within the cascade. By analyzing the dose-dependent evolution of mechanical properties (i.e., Poisson's ratios, compliance constants, elastic modulus, and hardness) as a measure of the increasing amorphization, we provide support for the double cascade-overlap damage accumulation model. We found no evidence to support the direct impact damage accumulation model. Additionally, the amount of radiation damage could be related to an anisotropic-to-isotropic transition of the Poisson's ratio for stress along and perpendicular to the four-fold c-axis and of the related compliance constants of natural U- and Th-bearing zircon. The isotropification occurs in the dose range between 3.1 × and 6.3 × 1018 α-decays/g.

Radiation-induced effects on the mechanical properties of natural ZrSiO4: double cascade-overlap damage accumulation

Science.gov (United States)

Beirau, Tobias; Nix, William D.; Pöllmann, Herbert; Ewing, Rodney C.

2018-05-01

Several different models are known to describe the structure-dependent radiation-induced damage accumulation process in materials (e.g. Gibbons Proc IEEE 60:1062-1096, 1972; Weber Nuc Instr Met Phys Res B 166-167:98-106, 2000). In the literature, two different models of damage accumulation due to α-decay events in natural ZrSiO4 (zircon) have been described. The direct impact damage accumulation model is based on amorphization occurring directly within the collision cascade. However, the double cascade-overlap damage accumulation model predicts that amorphization will only occur due to the overlap of disordered domains within the cascade. By analyzing the dose-dependent evolution of mechanical properties (i.e., Poisson's ratios, compliance constants, elastic modulus, and hardness) as a measure of the increasing amorphization, we provide support for the double cascade-overlap damage accumulation model. We found no evidence to support the direct impact damage accumulation model. Additionally, the amount of radiation damage could be related to an anisotropic-to-isotropic transition of the Poisson's ratio for stress along and perpendicular to the four-fold c-axis and of the related compliance constants of natural U- and Th-bearing zircon. The isotropification occurs in the dose range between 3.1 × and 6.3 × 1018 α-decays/g.

Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

International Nuclear Information System (INIS)

Beeman, J.W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

2013-01-01

In germanium-based light detectors for scintillating bolometers, a SiO 2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82 Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO 2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials

Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

Science.gov (United States)

Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

2013-05-01

In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

The effect of Si content on the fracture toughness of CrAlN/Si{sub 3}N{sub 4} coatings

Energy Technology Data Exchange (ETDEWEB)

Liu, S. [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Gordon Laboratory, Department of Materials Science and Metallurgy, 27 Charles Babbage Rd., Cambridge CB3 0FS (United Kingdom); Wheeler, J. M. [Laboratory for Nanometallurgy, ETH Zürich, Vladimir-Prelog-Weg 5, 8093 Zurich (Switzerland); Davis, C. E.; Clegg, W. J. [Gordon Laboratory, Department of Materials Science and Metallurgy, 27 Charles Babbage Rd., Cambridge CB3 0FS (United Kingdom); Zeng, X. T. [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore)

2016-01-14

CrAlN/Si{sub 3}N{sub 4} nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si{sub 3}N{sub 4} coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries.

siRNA and innate immunity.

Science.gov (United States)

Robbins, Marjorie; Judge, Adam; MacLachlan, Ian

2009-06-01

Canonical small interfering RNA (siRNA) duplexes are potent activators of the mammalian innate immune system. The induction of innate immunity by siRNA is dependent on siRNA structure and sequence, method of delivery, and cell type. Synthetic siRNA in delivery vehicles that facilitate cellular uptake can induce high levels of inflammatory cytokines and interferons after systemic administration in mammals and in primary human blood cell cultures. This activation is predominantly mediated by immune cells, normally via a Toll-like receptor (TLR) pathway. The siRNA sequence dependency of these pathways varies with the type and location of the TLR involved. Alternatively nonimmune cell activation may also occur, typically resulting from siRNA interaction with cytoplasmic RNA sensors such as RIG1. As immune activation by siRNA-based drugs represents an undesirable side effect due to the considerable toxicities associated with excessive cytokine release in humans, understanding and abrogating this activity will be a critical component in the development of safe and effective therapeutics. This review describes the intracellular mechanisms of innate immune activation by siRNA, the design of appropriate sequences and chemical modification approaches, and suitable experimental methods for studying their effects, with a view toward reducing siRNA-mediated off-target effects.

Comparison of light and x-ray sensitometric responses of double-emulsion films for different processing conditions

International Nuclear Information System (INIS)

Blendl, Christian; Buhr, Egbert

2001-01-01

The effects of different film processing conditions on light and x-ray sensitometric responses were compared for a variety of double-emulsion x-ray films. The processing conditions were altered by changes of the developer temperature. Three different exposure variants were applied: x-ray sensitometry using two stepped neutral density attenuators between film and screens, simultaneous double-sided light sensitometry, and single-sided light sensitometry. 13 different types of double-emulsion x-ray films were investigated, among them three asymmetric films. In the special case of exposing the asymmetric films with the single-sided light sensitometer, a method was investigated where each side of the film is exposed at different locations and the sum effect is analyzed. From each sensitometric curve shape two parameters, the logarithmic speed (log S) and the average gradient (G), were evaluated. The results of this study can be summarized as follows: (1) Single-sided and double-sided light sensitometers revealed almost equal changes of log S when the processing conditions are altered. Thus, single-sided light sensitometers can serve as a substitute for double-sided light sensitometers provided that suited exposure methods are used and appropriate sensitometric parameters are evaluated. (2) Light sensitometry quantitatively indicated changes of the film processing that affect the x-ray speed. Hence, light sensitometry is a useful method to monitor changes in film processing

Microstructure and Mechanical Characterization of a Dissimilar Friction-Stir-Welded CuCrZr/CuNiCrSi Butt Joint

Directory of Open Access Journals (Sweden)

Youqing Sun

2018-05-01

Full Text Available Dissimilar CuNiCrSi and CuCrZr butt joints were successfully frictionstirwelded at constant welding speed of 150 mm/min and rotational speed of 1400 rpm with the CuCrZr alloy or the CuNiCrSi alloy located on the advancing side (AS. The microstructure and mechanical properties of joints were investigated. When the CuCrZr alloy was located on the AS, the area of retreating material in the nugget zone was a little bigger. The Cr solute-rich particles were found in the nugget zone on CuCrZr side (CuCrZr-NZ while a larger density of solute-rich particles identified as the concentration of Cr and Si element was found in the nugget zone on CuNiCrSi side (CuNiCrSi-NZ. The Cr precipitates and δ-Ni2Si precipitates were found in the base metal on CuNiCrSi side (CuNiCrSi-BM but only Cr precipitates can be observed in the base metal on CuCrZr side (CuCrZr-BM. Precipitates were totally dissolved into Cu matrix in both CuCrZr-NZ and CuNiCrSi-NZ, which led to a sharp decrease in both micro-hardness and tensile strength from BM to NZ. When the CuNiCrSi was located on the AS, the tensile testing results showed the fracture occurred at the CuCrZr-NZ, while the fracture was found at the mixed zone of CuNiCrSi-NZ and CuCrZr-NZ for the other case.

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

International Nuclear Information System (INIS)

Mukherjee, Moumita; Tripathy, P. R.; Pati, S. P.

2015-01-01

A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10 6 S/m 2 ), susceptance (10.4 × 10 7 S/m 2 ), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems. (paper)

Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

On Rational Design of Double Hull Tanker Structures against Collision

DEFF Research Database (Denmark)

Paik, Jeom Kee; Chung, Jang Young; Choe, Ich Hung

1999-01-01

This paper is a summary of recent research and development in areas related to the design technology for double hull tanker structures against low energy collision, jointly undertaken by the Hyundai Heavy Industries, the American Bureau of Shipping, the Technical University of Denmark and the Pusan...... in the present study were (i) developing a framework for the collision design procedure for double hull tanker structures, (ii) experimental investigation of the structural crashworthiness of the collided vessels in collision or stranding, using double skinned structural models, (iii) validation of the special...... investigation of the energy absorption capability characteristics of a collided double hull VLCC side structure in collision, and (vi) development of a new modified Minorsky method for double hull tanker side structures. The tools developed and the results and insights obtained by the present study should...

Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

KAUST Repository

Bau, Jeremy A.; Takanabe, Kazuhiro

2017-01-01

Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

KAUST Repository

Bau, Jeremy A.

2017-10-17

Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor

International Nuclear Information System (INIS)

Li Qi; Wang Wei-Dong; Liu Yun; Wei Xue-Ming

2012-01-01

A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (DEL LDMOS). The mechanism of the improved breakdown characteristic is that the high electric field around the drain is reduced by substrate reverse bias, which causes the redistribution of the bulk electric field in the drift region, and the vertical blocking voltage is shared by the drain side and the source side. The numerical results indicate that the trade-off between breakdown voltage and on-resistance of the proposed device is improved greatly in comparison to that of the conventional LDMOS. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Directory of Open Access Journals (Sweden)

Peyman Jelodarian

2012-01-01

Full Text Available The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2 and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

TALEN-Induced Double-Strand Break Repair of CTG Trinucleotide Repeats

Directory of Open Access Journals (Sweden)

Valentine Mosbach

2018-02-01

Full Text Available Trinucleotide repeat expansions involving CTG/CAG triplets are responsible for several neurodegenerative disorders, including myotonic dystrophy and Huntington’s disease. Because expansions trigger the disease, contracting repeat length could be a possible approach to gene therapy for these disorders. Here, we show that a TALEN-induced double-strand break was very efficient at contracting expanded CTG repeats in yeast. We show that RAD51, POL32, and DNL4 are dispensable for double-strand break repair within CTG repeats, the only required genes being RAD50, SAE2, and RAD52. Resection was totally abolished in the absence of RAD50 on both sides of the break, whereas it was reduced in a sae2Δ mutant on the side of the break containing the longest repeat tract, suggesting that secondary structures at double-strand break ends must be removed by the Mre11-Rad50 complex and Sae2. Following the TALEN double-strand break, single-strand annealing occurred between both sides of the repeat tract, leading to repeat contraction.

MAX Phase Modified SiC Composites for Ceramic-Metal Hybrid Cladding Tubes

International Nuclear Information System (INIS)

Jung, Yang-Il; Kim, Sun-Han; Park, Dong-Jun; Park, Jeong-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun

2015-01-01

A metal-ceramic hybrid cladding consists of an inner zirconium tube, and an outer SiC fiber-matrix SiC ceramic composite with surface coating as shown in Fig. 1 (left-hand side). The inner zirconium allows the matrix to remain fully sealed even if the ceramic matrix cracks through. The outer SiC composite can increase the safety margin by taking the merits of the SiC itself. In addition, the outermost layer prevents the dissolution of SiC during normal operation. On the other hand, a ceramic-metal hybrid cladding consists of an outer zirconium tube, and an inner SiC ceramic composite as shown in Fig. 1 (right-hand side). The outer zirconium protects the fuel rod from a corrosion during reactor operation, as in the present fuel claddings. The inner SiC composite, additionally, is designed to resist the severe oxidation under a postulated accident condition of a high-temperature steam environment. Reaction-bonded SiC was fabricated by modifying the matrix as the MAX phase. The formation of Ti 3 SiC 2 was investigated depending on the compositions of the preform and melt. In most cases, TiSi 2 was the preferential phase because of its lowest melting point in the Ti-Si-C system. The evidence of Ti 3 SiC 2 was the connection with the pressurizing

Effect of SiO{sub 2} coating in bolometric Ge light detectors for rare event searches

Energy Technology Data Exchange (ETDEWEB)

Beeman, J.W. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gentils, A. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Giuliani, A., E-mail: andrea.giuliani@csnsm.in2p3.fr [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Mancuso, M. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Pessina, G. [Università di Milano-Bicocca, Dipartimento di Fisica, and INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Plantevin, O. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Rusconi, C. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy)

2013-05-01

In germanium-based light detectors for scintillating bolometers, a SiO{sub 2} anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope {sup 82}Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO{sub 2} coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

Configurable double-sided modular jet impingement assemblies for electronics cooling

Science.gov (United States)

Zhou, Feng; Dede, Ercan Mehmet

2018-05-22

A modular jet impingement assembly includes an inlet tube fluidly coupled to a fluid inlet, an outlet tube fluidly coupled to a fluid outlet, and a modular manifold having a first distribution recess extending into a first side of the modular manifold, a second distribution recess extending into a second side of the modular manifold, a plurality of inlet connection tubes positioned at an inlet end of the modular manifold, and a plurality of outlet connection tubes positioned at an outlet end of the modular manifold. A first manifold insert is removably positioned within the first distribution recess, a second manifold insert is removably positioned within the second distribution recess, and a first and second heat transfer plate each removably coupled to the modular manifold. The first and second heat transfer plates each comprise an impingement surface.

Charge transfer processes in collisions of Si{sup 4+} ions with He atoms at intermediate energies

Energy Technology Data Exchange (ETDEWEB)

Suzuki, R. [Hitotsubashi Univ., Tokyo (Japan). Computer Center; Watanabe, A. [Dept. of Information Sciences, Ochanomizu Univ., Tokyo (Japan); Sato, H. [Graduate School of Humanities and Sciences, Ochanomizu Univ., Tokyo (Japan); Gu, J.P.; Hirsch, G.; Buenker, R.J. [Wuppertal Univ. (Gesamthochschule) (Germany). Lehrgebiet Theoretische Chemie; Kimura, M. [Graduate School of Science and Engineering, Yamaguchi Univ., Ube (Japan); Stancil, P.C. [Georgia Univ., Athens, GA (United States). Dept. of Physics

2001-07-01

Charge transfer in collisions of Si{sup 4+} ions with He atoms below 100 keV/u is studied by using a molecular orbital representation within both the semiclassical and quantal representations. Single transfer reaction Si{sup 4+} + He {yields} Si{sup 3+} + He{sup +} has been studied by a number of theoretical investigations. In addition to the reaction (1), the first semiclassical MOCC calculations are performed for the double transfer channel Si{sup 4+} + He {yields} Si{sup 2+} + He{sup 2+}. Nine molecular states that connect both with single and double electron transfer processes are considered in the present model. Electronic states and corresponding couplings are determined by the multireference single- and double- excitation configuration interaction method. The present cross sections tie well with the earlier calculations of Stancil et al., (1997) at lower energies, but show a rather different magnitude from those of Bacchus-Montabonel and Ceyzeriat, (1998). The present rate constant is found to be significantly different from the experimental finding of Fang and Kwong, (1996) at 4,600 K, and hence does not support the experiment. (orig.)

Ion-acoustic solitary waves near double layers

International Nuclear Information System (INIS)

Kuehl, H.H.; Imen, K.

1985-01-01

The possibility of ion-acoustic solitary-wave solutions in the uniform plasma on the high-potential side of double layer is investigated. Based on a fluid model of the double layer, it is found that both compressive and rarefactive solitary waves are allowed. Curves are presented which show the regions in parameter space in which these solutions exist

Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

CERN Multimedia

Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

2002-01-01

It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

The silicon neighborhood across the a-Si:H to {mu}c-Si transition by X-ray absorption spectroscopy (XAS)

Energy Technology Data Exchange (ETDEWEB)

Tessler, Leandro R.; Wang Qi; Branz, Howard M

2003-04-22

We report a synchrotron X-ray absorption spectroscopy study of the average neighborhood of Si near the transition from a-Si:H to {mu}c-Si on wedge-shaped samples prepared by hot-wire CVD in a chamber using a movable shutter. The thickness of the wedge varies from 30 to 160 nm. Nucleation of {mu}c-Si occurs at a critical thickness of approximately 100 nm. X-Ray absorption was measured at the Si K-edge (1.84 keV) by total electron photoemission yield. The absorption oscillations in the EXAFS region are very similar to all along the wedge. Analysis indicates an average tetrahedral first neighbor shell with radial disorder decreasing with crystallization. In the near-edge (XANES) region multiple scattering effects appear at the onset of crystallinity. Unlike single crystal silicon, these effects involve only double scattering within the first neighbor shell, indicating an ill-formed second shell in {mu}c-Si.

Charge Transfer Processes in Collisions of Si4+ Ions with He Atoms at Intermediate Energies

Science.gov (United States)

Suzuki, R.; Watanabe, A.; Sato, H.; Gu, J. P.; Hirsch, G.; Buenker, R. J.; Kimura, M.; Stancil, P. C.

Charge transfer in collisions of Si4+ ions with He atoms below 100 keV/u is studied by using a molecular orbital representation within both the semiclassical and quantal representations. Single transfer reaction Si4++He →Si3++He+ has been studied by a number of theoretical investigations. In addition to the reaction (1), the first semiclassical MOCC calculations are performed for the double transfer channel Si4++HE→Si2++He2+ Nine molecular states that connect both with single and double electron transfer processes are considered in the present model. Electronic states and corresponding couplings are determined by the multireference single- and double- excitation configuration interaction method. The present cross sections tie well with the earlier calculations of Stancil et al., Phys. Rev. A 55, 1064 (1997) at lower energies, but show a rather different magnitude from those of Bacchus-Montabonel and Ceyzeriat, Phys. Rev. A 58, 1162 (1998). The present rate constant is found to be significantly different from the experimental finding of Fang and Kwong, Phys. Rev. A 59, 342 (1996) at 4,600 K, and hence does not support the experiment.

An albumin-mediated cholesterol design-based strategy for tuning siRNA pharmacokinetics and gene silencing

DEFF Research Database (Denmark)

Bienk, Konrad; Hvam, Michael Lykke; Pakula, Malgorzata Maria

2016-01-01

/2 12 min (naked) to t1/2 45 min (single cholesteryl) and t1/2 71 min (double cholesteryl) using fluorescent live bioimaging. The biodistribution showed increased accumulation in the liver for the double cholesteryl modified siRNA that correlated with an increase in hepatic Factor VII gene silencing......HSA/siRNA complex exhibited reduced nuclease degradation and reduced induction of TNF-α production by human peripheral blood mononuclear cells. The increased solubility of heavily cholesteryl modified siRNA in the presence of rHSA facilitated duplex annealing and consequent interaction that allowed in vivo studies...

Selective synthesis of double helices of carbon nanotube bundles grown on treated metallic substrates

Energy Technology Data Exchange (ETDEWEB)

Cervantes-Sodi, Felipe; Iniguez-Rabago, Agustin; Rosas-Melendez, Samuel; Ballesteros-Villarreal, Monica [Departamento de Fisica y Matematicas, Universidad Iberoamericana, Prolongacion Paseo de la Reforma 880, Lomas de Santa Fe (Mexico); Vilatela, Juan J. [IMDEA Materials Institute, E.T.S. de Ingenieros de Caminos, Madrid (Spain); Reyes-Gutierrez, Lucio G.; Jimenez-Rodriguez, Jose A. [Ingenieria Industrial, Grupo JUMEX, Ecatepec de Morelos, Estado de Mexico (Mexico); Palacios, Eduardo [Lab. de Microscopia Electronica de Ultra Alta Resolucion, Instituto Mexicano del Petroleo, San Bartolo Atepehuacan (Mexico); Terrones, Mauricio [Department of Physics, Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA (United States); Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano (Japan)

2012-12-15

Double-helix microstructures consisting of two parallel strands of hundreds of multi-walled carbon nanotubes (MWCNTs) have been synthesized by chemical vapour deposition of ferrocene/toluene vapours on metal substrates. Growth of coiled carbon nanostructures with site selectivity is achieved by varying the duration of thermochemical pretreatment to deposit a layer of SiO{sub x} on the metallic substrate. Production of multibranched structures of MWCNTs converging in SiO{sub x} microstructure is also reported. In the abstract figure, panel (a) shows a coloured micrograph of a typical double-helix coiled microstructure of MWCNTs grown on SiO{sub x} covered steel substrate. Green and blue show each of the two individual strands of MWCNTs. Panel (b) is an amplification of a SiO{sub x} microparticle (white) on the tip of the double-stranded coil (green and blue). The microparticle guides the collective growth of hundreds of MWCNTs to form the coiled structure. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Development of Microstructure and Crystallographic Texture in a Double-Sided Friction Stir Welded Microalloyed Steel

Science.gov (United States)

Rahimi, S.; Wynne, B. P.; Baker, T. N.

2017-01-01

The evolution of microstructure and crystallographic texture has been investigated in double-sided friction stir welded microalloyed steel, using electron backscatter diffraction (EBSD). The microstructure analyses show that the center of stirred zone reached a temperature between Ac1 and Ac3 during FSW, resulting in a dual-phase austenitic/ ferritic microstructure. The temperatures in the thermo-mechanically affected zone and the overlapped area between the first and second weld pass did not exceed the Ac1. The shear generated by the rotation probe occurs in austenitic/ferritic phase field where the austenite portion of the microstructure is transformed to a bainitic ferrite, on cooling. Analysis of crystallographic textures with regard to shear flow lines generated by the probe tool shows the dominance of simple shear components across the whole weld. The austenite texture at Ac1 - Ac3 is dominated by the B { {1bar{1}2} }D2 { {11bar{2}} }< 111rangle simple shear texture components. The formation of ultrafine equiaxed ferrite with submicron grain size has been observed in the overlapped area between the first and second weld pass. This is due to continuous dynamic strain-induced recrystallization as a result of simultaneous severe shear deformation and drastic undercooling.

Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

Science.gov (United States)

Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

2018-02-01

As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

International Nuclear Information System (INIS)

Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

2012-01-01

Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO x films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO x films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO x /SiO x /Si interface with positron trapping and annihilation occurring in the Si side of the SiO x /Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO x interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO 2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

Energy Technology Data Exchange (ETDEWEB)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; Austing, D. G.; Lu, Tzu-Ming; Luhman, Dwight; Bethke, Donald Thomas; Wanke, Michael; Lilly, Michael; Carroll, Malcolm S.; Sachrajda, A. S.

2017-12-01

We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si_0.8Ge_0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.

Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF Co-sputtering method

Energy Technology Data Exchange (ETDEWEB)

Lee, Jonghyun; Choi, Wonjoon; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh [Hanyang University, Seoul (Korea, Republic of); Cheong, Hyeonsik [Sogang University, Seoul (Korea, Republic of)

2006-09-15

Outstanding n-type ZnO thin films were prepared on Si substrates by utilizing a double RF cosputtering method. Our unique double RF technique has many attractive merits for synthesizing ZnO thin films with excellent optoelectronic properties at various temperatures. The ZnO thin films were also post-annealed at various temperatures. The X-ray diffraction patterns and X-ray photoelectron spectroscopy indicated well-grown ZnO films with a (002) orientation and with gorgeous chemically bond states, respectively. In addition, photoluminescence measurements indicated a band-gap of 3.4 eV in the ZnO films. The scanning electron microscopy images showed that the as-grown ZnO thin film had hexagonal column shapes, such as hexagonal rods. The ZnO film exhibited an UV light response with a cut-off wavelength of {approx}370 nm at room temperature.

In-situ Observation of Fracture Behavior on Nano Structure in NITE SiC/SiC Composite by HVEM

International Nuclear Information System (INIS)

Shibayama, Tamaki; Hamada, Kouichi; Watanabe, Seiichi; Matsuo, Genichiro; Kishimoto, Hirotatsu

2011-01-01

We have been successfully done in situ observation on the sequence of fracture event at the interface of NITE SiC/SiC composite examined by using miniaturized double notched shear specimen for TEM prepared by Focused Ion Beam method. In this study, we used nano-mechanics TEM experimental apparatus to investigate not only microstructure evolution and but also load and displacement curve at once in High Voltage Electron Microscope. Our results summarize as follows. Cracks were initiated at the interface between carbon coating layer on the SiC fiber and SiC matrices, and propagated along the interface. Load drop in the load and displacement curve during in-situ TEM was clearly observed at the crack initiation. The shear strength by using the miniaturized specimen is about ten times higher than that obtained by the standard testing.

(r, s-(τ12,τ12*-θ-Generalized double fuzzy closed sets in bitopological spaces

Directory of Open Access Journals (Sweden)

E. El-Sanousy

2016-10-01

Full Text Available In this paper, we introduce the notion of (r, s-(i, j-θ-generalized double fuzzy closed sets in double fuzzy bitopological spaces. A new θ-double fuzzy closure C12θ on double fuzzy bitopological spaces by using double supra fuzzy topological spaces are defined. Furthermore, generalized double fuzzy θ-continuous (resp. irresolute and double fuzzy strongly θ-continuous mappings are introduced and some of their properties studied.

Double Entry Bookkeeping and Kitab-us Siyakat

OpenAIRE

Örten, Remzi; Kurt, Ganite; Torun, Salih

2011-01-01

It is known that accounting is applied since the existence of human being. When historical development of accounting is examined, recording methods may be summarized as single sided and double sided. The first method used in accounting is the single entry bookkeeping. According to this entry, not all of information related to financial events but important part of them are recorded in a single way. We can specify follow-up of receivable, payable, incomes and expenses as single sided recording...

Determination of phosphorus distribution in the region of a SiO2-Si interface by substoichiometric analysis

International Nuclear Information System (INIS)

Shigematsu, T.; Yonezawa, H.

1994-01-01

A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs

Mechanical characterization of Si-C(O) fiber/SiC (CVI) matrix composites with a BN-interphase

International Nuclear Information System (INIS)

Prouhet, S.; Camus, G.; Labrugere, C.; Guette, A.; Martin, E.

1994-01-01

The mechanical behavior of three CVI-processed 2D woven SiC/BN/SiC composite materials with different initial BN interphase thicknesses has been investigated by means of tensile and impact tests. The results have established the efficiency of a BN interphase in promoting a nonlinear/noncatastrophic tensile behavior and high impact resistance. The effect of the initial BN interphase thickness on the resulting mechanical behavior has also been demonstrated. AES and TEM has revealed the presence of a SiO 2 /C double layer at the BN/fiber interface, which might result from a decomposition undergone by the Si-C(O) Nicalon fiber during processing. It has been suggested that the influence of the initial BN interphase thickness on the mechanical properties of the composites results from both changes occurring in the composition and morphology of the interfacial zones and modifications of the interfacial forces due to accommodation of the radial residual clamping stress

Double-Slot Hybrid Plasmonic Ring Resonator Used for Optical Sensors and Modulators

Directory of Open Access Journals (Sweden)

Xu Sun

2015-11-01

Full Text Available An ultra-high sensitivity double-slot hybrid plasmonic (DSHP ring resonator, used for optical sensors and modulators, is developed. Due to high index contrast, as well as plasmonic enhancement, a considerable part of the optical energy is concentrated in the narrow slots between Si and plasmonic materials (silver is used in this paper, which leads to high sensitivity to the infiltrating materials. By partial opening of the outer plasmonic circular sheet of the DSHP ring, a conventional side-coupled silicon on insulator (SOI bus waveguide can be used. Experimental results demonstrate ultra-high sensitivity (687.5 nm/RIU of the developed DSHP ring resonator, which is about five-times higher than for the conventional Si ring with the same geometry. Further discussions show that a very low detection limit (5.37 × 10−6 RIU can be achieved after loaded Q factor modifications. In addition, the plasmonic metal structures offer also the way to process optical and electronic signals along the same hybrid plasmonic circuits with small capacitance (~0.275 fF and large electric field, which leads to possible applications in compact high-efficiency electro-optic modulators, where no extra electrodes for electronic signals are required.

Application of a Double-Sided Chance-Constrained Integer Linear Program for Optimization of the Incremental Value of Ecosystem Services in Jilin Province, China

Directory of Open Access Journals (Sweden)

Baofeng Cai

2017-08-01

Full Text Available The Interconnected River System Network Project (IRSNP is a significant water supply engineering project, which is capable of effectively utilizing flood resources to generate ecological value, by connecting 198 lakes and ponds in western Jilin, northeast China. In this article, an optimization research approach has been proposed to maximize the incremental value of IRSNP ecosystem services. A double-sided chance-constrained integer linear program (DCCILP method has been proposed to support the optimization, which can deal with uncertainties presented as integers or random parameters that appear on both sides of the decision variable at the same time. The optimal scheme indicates that after rational optimization, the total incremental value of ecosystem services from the interconnected river system network project increased 22.25%, providing an increase in benefits of 3.26 × 109 ¥ compared to the original scheme. Most of the functional area is swamp wetland, which provides the greatest ecological benefits. Adjustment services increased obviously, implying that the optimization scheme prioritizes ecological benefits rather than supply and production services.

Stability of trapped electrons in SiO2

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.

1998-01-01

Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface

Oral delivery of double-stranded RNAs and siRNAs induces RNAi effects in the potato/tomato psyllid, Bactericerca cockerelli.

Directory of Open Access Journals (Sweden)

Hada Wuriyanghan

Full Text Available The potato/tomato psyllid, Bactericerca cockerelli (B. cockerelli, and the Asian citrus psyllid, Diaphorina citri (D. citri, are very important plant pests, but they are also vectors of phloem-limited bacteria that are associated with two devastating plant diseases. B. cockerelli is the vector of Candidatus Liberibacter psyllaurous (solanacearum, which is associated with zebra chip disease of potatoes, and D. citri is the vector of Ca. Liberibacter asiaticus, which is associated with the Huanglongbing (citrus greening disease that currently threatens the entire Florida citrus industry. Here we used EST sequence information from D. citri to identify potential targets for RNA interference in B. cockerelli. We targeted ubiquitously expressed and gut-abundant mRNAs via injection and oral acquisition of double-stranded RNAs and siRNAs and were able to induce mortality in recipient psyllids. We also showed knockdown of target mRNAs, and that oral acquisition resulted primarily in mRNA knockdown in the psyllid gut. Concurrent with gene knockdown was the accumulation of target specific ∼ 21 nucleotide siRNAs for an abundant mRNA for BC-Actin. These results showed that RNAi can be a powerful tool for gene function studies in psyllids, and give support for continued efforts for investigating RNAi approaches as possible tools for psyllid and plant disease control.

Fabrication of p-{beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2}/nSi heterostructure diode and their electrical and optical properties

Energy Technology Data Exchange (ETDEWEB)

Takada, T; Katsumata, H; Makita, Y; Kobayashi, N; Hasegawa, M; Uekusa, S

1997-07-01

The authors report on the fabrication of p-type {beta}-FeSi{sub 2} layers on n-type Si(100) substrates and the investigation of their p-n diode characteristics. Since the undoped {beta}-FeSi{sub 2} layers have typically shown n-type conductivity, the p-type layers were formed by the introduction of Mn impurity into {beta}-FeSi{sub 2} layers using two types of doping methods; one is an Electron-Beam-Deposition (EBD) procedure of Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} (x < {approximately}0.1) at room temperature and subsequent annealing at 900 C for 1--120 min, where FeSi{sub 2} ingots added with Mn({approximately}10%) were used as starting materials. The other is a {sup 55}Mn{sup +}-implantation into {beta}-FeSi{sub 2} layers formed by EBD and subsequent annealing at 850 C for 1--120 min. From van der Pauw measurements, p-type {beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} layers with the resistivity of 0.0036--0.031 {Omega}{center{underscore}dot}cm and hole mobility of 11.9--89.0 cm{sup 2}/V{center{underscore}dot}sec were found to be successfully formed on n-Si substrates by both doping methods. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution does not agree with either ideal one-side step or one-side slop junctions, although optical transmittance and reflectance measurements indicate that the silicide/Si interface is of good quality.

A novel, SiPM-array-based, monolithic scintillator detector for PET

International Nuclear Information System (INIS)

Schaart, Dennis R; Dam, Herman T van; Seifert, Stefan; Beekman, Freek J; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert

2009-01-01

Silicon photomultipliers (SiPMs) are of great interest to positron emission tomography (PET), as they enable new detector geometries, for e.g., depth-of-interaction (DOI) determination, are MR compatible, and offer faster response and higher gain than other solid-state photosensors such as avalanche photodiodes. Here we present a novel detector design with DOI correction, in which a position-sensitive SiPM array is used to read out a monolithic scintillator. Initial characterization of a prototype detector consisting of a 4 x 4 SiPM array coupled to either the front or back surface of a 13.2 mm x 13.2 mm x 10 mm LYSO:Ce 3+ crystal shows that front-side readout results in significantly better performance than conventional back-side readout. Spatial resolutions 2 detector, equals 960 ps FWHM.

Object analysis of bone marrow MR imaging using double echo STIR sequence in hematological diseases

Energy Technology Data Exchange (ETDEWEB)

Mizuno, Hitomi [Saitama Medical School, Moroyama (Japan)

1995-07-01

The bone marrow of 84 patients with hematological disorders was investigated using short inversion time inversion recovery sequence (STIR) on an 1.5 Tesla superconducting MRI system. Double echo times of 20 and 100 msec were applied to research the signal characteristics of the lesion and carry out quantitative analysis of the receiver operating characteristic curve (ROC). The hematological diseases included 19 cases of myelodysplastic syndrome (MDS), 18 of multiple myeloma (MM), 18 of chronic myelocytic leukemia (CML), 9 of aplastic anemia (AA), 8 of acute myelocytic leukemia (AML), 3 of chronic lymphocytic leukemia (CLL), 3 of myelofibrosis, and 3 others. Using STIR with double echo times, bone marrow showed high signal intensity (SI) on short TE and low SI on long TE in MDS and CML; high SI on short and long TE in myelofibrosis and CLL; high SI on short TE and high to moderately high SI on long TE in MM; and low SI on short and long TE in AA. Quantitative analysis of 33 patients showed high sensitivity and specificity in AA (81% and 94%, respectively) and moderate sensitivity and high specificity in MM (61%, 88%). CML and MDS were similar with low sensitivities (40%, 41%) and high specificities (80%, 78%). Differential diagnosis between CML and MDS was difficult using STIR with the double echo time method. (author).

Design of a side-band-separating heterodyne mixer for band 9 of ALMA

NARCIS (Netherlands)

Baryshev, AM; Kooi, J; Mena, FR; Lodewijk, CRJ; Wild, W

2005-01-01

A side-band-separating (SBS) heterodyne mixer has been designed for the Atacama Large Millimeter Array (ALMA) 602-720 GHz band, as it will present a great improvement over the current double-side-band configuration under development at the moment. Here we present design details and the results of

a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

Energy Technology Data Exchange (ETDEWEB)

Rostan, Philipp Johannes

2010-07-01

internal quantum efficiency shows that both types of back contacts lead to effective diffusion lengths in excess of 600 {mu}m. An extended fill factor analysis shows that fill factor limitations for the full-area a-Si:H/c-Si contacts result from non-ideal diode behavior, ascribed to the injection dependence of the heterojunction interface recombination velocity. Analysis of the external quantum efficiency under back side illumination with different bias light intensities delivers the effective surface recombination S{sub eff}({phi}) in dependance of the illumination intensity {phi}. The front contact (emitter) uses a sequence of intrinsic and phosphorous doped amorphous silicon layers together with a ZnO:Al or a SnO{sub 2}:In layer and an Al front contact grid. The emitter is prepared at a maximum temperature of 220 C. Measurements of the minority carrier lifetime on symmetric i/n-a-Si:H coated wafers judge the emitter passivation quality. The best solar cells that use a thermal oxide back side passivation with Al-point contacts and flat a-Si:H emitters have open circuit voltages up to 683 mV and efficiencies up to 17.4 %. The efficiency of such devices is limited by a low short circuit current due to the flat front side. Using the same back contact structure with random pyramid textured wafer front sides and a-Si:H emitters yields open circuit voltages up to 660 mV and efficiencies up to 18.5 %, so far limited by a relatively low fill factor FF {<=} 74.3 %. Analysis of the external quantum efficiency underlines the excellent surface passivation properties of the amorphous emitter. Combining both, amorphous front- and back contacts yields p-type heterojunction solar cells completely fabricated at temperatures below 220 C. The best devices reach an open circuit voltage V{sub oc} = 678 mV and an efficiency {eta} = 18.1 % with random textured wafers, limited by low fill factors FF {approx} 75 %. Besides the cell fabrication and characterization, this thesis reveals that the

New platforms for multi-functional ocular lenses: engineering double-sided functionalized nano-coatings

DEFF Research Database (Denmark)

Mehta, Prina; Justo, Lucas; Walsh, Susannah

2015-01-01

rates variable between 5 and 10 µL/min, applied voltage 4–11 kV). Each side was coated (using a specially designed flip-able well) selectively with a pre-determined morphology and model drug substance. PVP nanoparticles (inner side, to be in contact with the cornea, mean size ... encapsulated with a probe (flourescein dye) and PVP nanofibres (outer side, to be exposed to air and eye lid, mean width size ... on rapid dissolution and contact of PVP model substance matrix. Adapting these findings further for advanced EHDA technologies (encapsulation layering, controllable size and deposition and multi-phase media deposition options) and intrinsic material properties (functional polymers/excipients and advanced...

Aristotle and Double Effect

DEFF Research Database (Denmark)

Di Nucci, Ezio

2014-01-01

There are some interesting similarities between Aristotle’s ‘mixed actions’ in Book III of the Nicomachean Ethics and the actions often thought to be justifiable with the Doctrine of Double Effect. Here I analyse these similarities by comparing Aristotle’s examples of mixed actions with standard...... cases from the literature on double effect such as, amongst others, strategic bombing, the trolley problem, and craniotomy. I find that, despite some common features such as the dilemmatic structure and the inevitability of a bad effect, Aristotle’s mixed actions do not count as cases justifiable...... through application of the Doctrine of Double Effect because they fail to meet the crucial necessary condition of the Doctrine according to which the bad effect can only be a merely foreseen side- effect and not an intended means....

Coupling behaviors of graphene/SiO2/Si structure with external electric field

Science.gov (United States)

Onishi, Koichi; Kirimoto, Kenta; Sun, Yong

2017-02-01

A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.

Solid nano-in-nanoparticles for potential delivery of siRNA.

Science.gov (United States)

Amsalem, Orit; Nassar, Taher; Benhamron, Sandrine; Lazarovici, Philip; Benita, Simon; Yavin, Eylon

2017-07-10

siRNA-based therapeutics possess great potential to treat a wide variety of genetic disorders. However, they suffer from low cellular uptake and short half-lives in blood circulation; issues that remain to be addressed. This work is, to the best of our knowledge, the first to report the production of solid nano-in-nanoparticles, termed double nano carriers (DNCs) by means of the innovative technology of nano spray drying. DNCs (with a median size of 580-770nm) were produced by spraying at low temperatures (50°C) to prevent damage to heat-sensitive biomacromolecules like siRNA. DNCs consisting of Poly (d,l-lactide-co-glycolide) used as a wall material, encapsulating 20% human serum albumin primary nanoparticles (PNPs) loaded with siRNA, were obtained as a dry nanoparticulate powder with smooth spherical surfaces and a unique inner morphology. Incubation of pegylated or non-pegylated DNCs under sink conditions at 37°C, elicited a controlled release profile of the siRNA for up to 12 or 24h, respectively, with a minimal burst effect. Prolonged incubation of pegylated DNCs loaded with active siRNA (anti EGFR) in an A549 epithelial cell culture monolayer did not induce any apparent cytotoxicity. A slow degradation of the internalized DNCs by the cells was also observed resulting in the progressive release of the siRNA for up to 6days, as corroborated by laser confocal microscopy. The structural integrity and silencing activity of the double encapsulated siRNA were fully preserved, as demonstrated by HPLC, gel electrophoresis, and potent RNAi activity of siRNA extracted from DNCs. These results demonstrate the potential use of DNCs as a nano drug delivery system for systemic administration and controlled release of siRNA and potentially other sensitive bioactive macromolecules. Copyright © 2016 Elsevier B.V. All rights reserved.

Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots

Directory of Open Access Journals (Sweden)

Viktoriia Kornich

2018-05-01

Full Text Available We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their relaxation and decoherence times, in particular as a function of level hybridization, temperature, magnetic field, spin orbit interaction, and detuning between the quantum dots, using Bloch-Redfield theory. We show that the magnetic field gradient, which is usually applied to operate the spin qubit, may reduce the relaxation time by more than an order of magnitude. Using this insight, we identify an optimal regime where the magnetic field gradient does not affect the relaxation time significantly, and we propose regimes of longest decay times. We take into account the effects of one-phonon and two-phonon processes and suggest how our theory can be tested experimentally. The spin lifetimes we find here for Si-based quantum dots are significantly longer than the ones reported for their GaAs counterparts.

Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

2017-01-15

Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

Social Welfare Improvement by TCSC using Real Code Based Genetic Algorithm in Double-Sided Auction Market

Directory of Open Access Journals (Sweden)

MASOUM, M. A. S.

2011-05-01

Full Text Available This paper presents a genetic algorithm (GA to maximize total system social welfare and alleviate congestion by best placement and sizing of TCSC device, in a double-sided auction market. To introduce more accurate modeling, the valve loading effects is incorporated to the conventional quadratic smooth generator cost curves. By adding the valve point effect, the model presents nondifferentiable and nonconvex regions that challenge most gradient-based optimization algorithms. In addition, quadratic consumer benefit functions integrated in the objective function to guarantee that locational marginal prices charged at the demand buses is less than or equal to DisCos benefit, earned by selling that power to retail customers. The proposed approach makes use of the genetic algorithm to optimal schedule GenCos, DisCos and TCSC location and size, while the Newton-Raphson algorithm minimizes the mismatch of the power flow equations. Simulation results on the modified IEEE 14-bus and 30-bus test systems (with/without line flow constraints, before and after the compensation are used to examine the impact of TCSC on the total system social welfare improvement. Several cases are considered to test and validate the consistency of detecting best solutions. Simulation results are compared to solutions obtained by sequential quadratic programming (SQP approaches.

Stålplader gav dobbelt bæreevne (Steel plates doubled the load bearing capacity)

DEFF Research Database (Denmark)

Nielsen, Jan Broch

1999-01-01

Abstract from an examination of motor road bridge beams reinforced with steel plates on the sides and bottom. The plates doubled the load bearing capacity of the beams.......Abstract from an examination of motor road bridge beams reinforced with steel plates on the sides and bottom. The plates doubled the load bearing capacity of the beams....

Dose-ranging evaluation of intravitreal siRNA PF-04523655 for diabetic macular edema (the DEGAS study)

DEFF Research Database (Denmark)

Nguyen, Quan Dong; Schachar, Ronald A; Nduaka, Chudy I

2012-01-01

To evaluate the safety and efficacy of three doses of PF-04523655, a 19-nucleotide methylated double stranded siRNA targeting the RTP801 gene, for the treatment of diabetic macular edema (DME) compared to focal/grid laser photocoagulation.......To evaluate the safety and efficacy of three doses of PF-04523655, a 19-nucleotide methylated double stranded siRNA targeting the RTP801 gene, for the treatment of diabetic macular edema (DME) compared to focal/grid laser photocoagulation....

Ge/Si core/multi shell heterostructure FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

siRNA for Influenza Therapy

Directory of Open Access Journals (Sweden)

Sailen Barik

2010-07-01

Full Text Available Influenza virus is one of the most prevalent and ancient infections in humans. About a fifth of world's population is infected by influenza virus annually, leading to high morbidity and mortality, particularly in infants, the elderly and the immunocompromised. In the US alone, influenza outbreaks lead to roughly 30,000 deaths each year. Current vaccines and anti-influenza drugs are of limited use due to high mutation rate of the virus and side effects. In recent years, RNA interference, triggered by synthetic short interfering RNA (siRNA, has rapidly evolved as a potent antiviral regimen. Properly designed siRNAs have been shown to function as potent inhibitors of influenza virus replication. The siRNAs outperform traditional small molecule antivirals in a number of areas, such as ease of design, modest cost, and fast turnaround. Although specificity and tissue delivery remain major bottlenecks in the clinical applications of RNAi in general, intranasal application of siRNA against respiratory viruses including, but not limited to influenza virus, has experienced significant success and optimism, which is reviewed here.

siRNA for Influenza Therapy.

Science.gov (United States)

Barik, Sailen

2010-07-01

Influenza virus is one of the most prevalent and ancient infections in humans. About a fifth of world's population is infected by influenza virus annually, leading to high morbidity and mortality, particularly in infants, the elderly and the immunocompromised. In the US alone, influenza outbreaks lead to roughly 30,000 deaths each year. Current vaccines and anti-influenza drugs are of limited use due to high mutation rate of the virus and side effects. In recent years, RNA interference, triggered by synthetic short interfering RNA (siRNA), has rapidly evolved as a potent antiviral regimen. Properly designed siRNAs have been shown to function as potent inhibitors of influenza virus replication. The siRNAs outperform traditional small molecule antivirals in a number of areas, such as ease of design, modest cost, and fast turnaround. Although specificity and tissue delivery remain major bottlenecks in the clinical applications of RNAi in general, intranasal application of siRNA against respiratory viruses including, but not limited to influenza virus, has experienced significant success and optimism, which is reviewed here.

Double-Sided Laser Heating in Radial Diffraction Geometry for Diamond Anvil Cell Deformation Experiments at Simultaneous High Pressures and Temperatures

Science.gov (United States)

Miyagi, L. M.; Kunz, M.; Couper, S.; Lin, F.; Yan, J.; Doran, A.; MacDowell, A. A.

2017-12-01

The rheology of rocks and minerals in the Earth's deep interior plays a primary role in controlling large scale geodynamic processes such as mantle convection and slab subduction. Plastic deformation resulting from these processes can lead to texture development and associated seismic anisotropy. If a detailed understanding of the link between deformation and seismic anisotropy is established, observations of seismic anisotropy can be used to understand the dynamic state in the deep Earth. However, performing deformation experiments at lower mantle pressure and temperature conditions are extremely challenging. Thus most deformation studies have been performed either at room temperature and high pressure or at reduced pressures and high temperature. Only a few extraordinary efforts have attained pressures and temperatures relevant to lower mantle. Therefore our ability to interpret observations of lower mantle seismic anisotropy in terms of mantle flow models remains limited. In order to expand the pressure and temperature range available for deformation of deep Earth relevant mineral phases, we have developed a laser heating system for in-situ double-sided heating in radial diffraction geometry at beamline 12.2.2 of the Advanced Light Source of Lawrence Berkeley National Laboratory. This allows texture and lattice strain measurements to be recorded at simultaneous high pressures and temperatures in the diamond anvil cell. This new system is integrated into the newly built axial laser heating system to allow for rapid and reliable transitioning between double-sided laser heating in axial and radial geometries. Transitioning to radial geometry is accomplished by redirecting the laser and imaging paths from 0° and 180° to 90° and 270°. To redirect the 90° path, a motorized periscope mirror pair with an objective lens can be inserted into the downstream axial beam path. The 270° redirection is accomplished by removing the upstream axial objective lens and

Eight Arguments against Double Effect

DEFF Research Database (Denmark)

Di Nucci, Ezio

I offer eight arguments against the Doctrine of Double Effect, a normative principle according to which in pursuing the good it is sometimes morally permissible to bring about some evil as a side-effect or merely foreseen consequence: the same evil would not be morally justified as an intended...

Determination of critical breakage conditions for double glazing in fire

International Nuclear Information System (INIS)

Wang, Yu; Li, Ke; Su, Yanfei; Lu, Wei; Wang, Qingsong; Sun, Jinhua; He, Linghui; Liew, K.M.

2017-01-01

Highlights: • Critical heat fluxes of exposed and ambient panes are 6 kW/m"2 and 25 kW/m"2. • Critical temperature difference of fire side pane is around 60 °C. • The ambient pane survives three times longer due to radiation filter and air gap. • Heat transfer in double glazing is revealed by a heat flux based theoretical model. - Abstract: Double glazing unit normally demonstrates better fire resistance than single glazing, but the knowledge on its thermal behavior and heat transfer mechanism during fire is limited. In this work, nine double glazing units were heated by a 500 × 500 mm"2 pool fire. The incident heat flux, temperature on four surfaces, breakage time and cracking behavior were obtained. The critical breakage conditions for interior and exterior panes were determined through gradually decreasing the glass-burner distance from 750 mm to 450 mm. It is established that in double glazing the pane at ambient side can withstand significantly more time than the pane exposed to fire. The critical temperature difference for interior pane is 60 °C; the critical temperature of exterior pane breakage is much higher due to no frame-covered area. In addition, the heat flux at the time of crack initiation is 6 kW/m"2 for the pane at fire side, while more than 25 kW/m"2 for ambient side pane. To reveal the heat transfer mechanism in glazing-air-glazing, theoretical and numerical investigations are also performed, which agrees well with the experimental results.

Internal Friction of (SiO2)1-x (GeO2)x Glasses

OpenAIRE

Kosugi , T.; Kobayashi , H.; Kogure , Y.

1996-01-01

Internal friction of (SiO2)1-x (GeO2)x glasses (x = 0, 5, 10, 24 and 100 mole%) is measured at temperatures between 1.6 and 280 K. The data are filted with the equations for thermally activated relaxation with distributing activation energies in symmetrical double-well potentials. From the determined relaxation strength spectra for each sample, the contributions from each type of microscopic structural units are calculated assuming that transverse motion of the bridging O atom in Si-O-Si, Si-...

Diode-side-pumped intracavity frequency-doubled Nd:YAG/BaWO4 Raman laser generating average output power of 3.14 W at 590 nm.

Science.gov (United States)

Li, Shutao; Zhang, Xingyu; Wang, Qingpu; Zhang, Xiaolei; Cong, Zhenhua; Zhang, Huaijin; Wang, Jiyang

2007-10-15

We report a linear-cavity high-power all-solid-state Q-switched yellow laser. The laser source comprises a diode-side-pumped Nd:YAG module that produces 1064 nm fundamental radiation, an intracavity BaWO(4) Raman crystal that generates a first-Stokes laser at 1180 nm, and a KTP crystal that frequency doubles the first-Stokes laser to 590 nm. A convex-plane cavity is employed in this configuration to counteract some of the thermal effect caused by high pump power. An average output power of 3.14 W at 590 nm is obtained at a pulse repetition frequency of 10 kHz.

Incidence of double ovulation during the early postpartum period in lactating dairy cows.

Science.gov (United States)

Kusaka, Hiromi; Miura, Hiroshi; Kikuchi, Motohiro; Sakaguchi, Minoru

2017-03-15

In lactating cattle, the incidence of twin calving has many negative impacts on production and reproduction in dairy farming. In almost all cases, natural twinning in dairy cattle is the result of double ovulation. It has been suggested that the milk production level of cows influences the number of ovulatory follicles. The objective of the present study was to investigate the incidence of double ovulations during the early postpartum period in relation to the productive and reproductive performance of dairy cows. The ovaries of 43 Holstein cows (26 primiparous and 17 multiparous) were ultrasonographically scanned throughout the three postpartum ovulation sequences. The incidence of double ovulation in the unilateral ovaries was 66.7%, with a higher incidence in the right ovary than in the left, whereas that in bilateral ovaries was 33.3%. When double ovulations were counted dividing into each side ovary in which ovulations occurred, the total frequency of ovulations deviated from a 1:1 ratio (60.3% in the right side and 39.7% in the left side, P cows, double ovulation occurred more frequently than in primiparous cows (58.8% vs. 11.5% per cow and 30.0% vs. 3.8% per ovulation, respectively P cows, the double ovulators exhibited higher peak milk yield (P cows. Two multiparous cows that experienced double ovulation during the early postpartum period subsequently conceived twin fetuses. It can be speculated that the incidence of double ovulations during the early postpartum period partly contributes to the increased incidence of undesirable twin births in multiparous dairy cows. Copyright © 2016. Published by Elsevier Inc.

Coated Porous Si for High Performance On-Chip Supercapacitors

Science.gov (United States)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Leakage and field emission in side-gate graphene field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.; Cucolo, A. M. [Physics Department “E.R. Caianiello,” University of Salerno, via G. Paolo II, 84084 Fisciano (Italy); CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy); Giubileo, F. [CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy); Russo, S.; Unal, S. [Physics Department, University of Exeter, Stocker Road 6, Exeter, Devon EX4 4QL (United Kingdom); Passacantando, M.; Grossi, V. [Department of Physical and Chemical Sciences, University of L' Aquila, Via Vetoio, 67100 Coppito, L' Aquila (Italy)

2016-07-11

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.

Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

Energy Technology Data Exchange (ETDEWEB)

Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

Preliminary study in development of glass-ceramic based on SiO2-LiO2 system, starting of different SiO2 starting powders

International Nuclear Information System (INIS)

Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D.; Melo, F.C.L.

2009-01-01

In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO 2 and Li 2 CO 3 powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO 2 powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li 2 SiO 3 and residual SiO 2 as crystalline phases. On the other side, commercial SiO 2 - Samples presented only Li 2 Si 2 O 5 as crystalline phases and the better results of hardness and fracture toughness. (author)

Evaluation of carrier-mediated siRNA delivery

DEFF Research Database (Denmark)

Colombo, Stefano; Nielsen, Hanne Mørck; Foged, Camilla

2013-01-01

RNA delivery. An in vitro cell culture model system expressing enhanced green fluorescent protein (EGFP) was used to develop the assay, which was based on the intracellular quantification of a full-length double-stranded Dicer substrate siRNA by stem-loop RT qPCR. The result is a well-documented protocol......RNA delivered by use of carriers remains an analytical challenge. The purpose of the present study was to optimize and validate an analytical protocol based on stem-loop reverse transcription quantitative polymerase chain reaction (RT qPCR) to quantitatively monitor the carrier-mediated intracellular si...

Actinide-carbon bonds: insertion reactions of carbon monoxide, tert-butyl isocyanide, and tert-butyl cyanide into [(Me3Si)2N]2MCH2Si(Me)2NSiMe3

International Nuclear Information System (INIS)

Simpson, S.J.; Andersen, R.A.

1981-01-01

The thorium or uranium metallacycles [(Me 2 Si) 2 N] 2 MCH 2 Si(Me) 2 NSiMe 3 (I) react with tert-butyl cyanide to give the six-membered ring compounds [(Me 3 Si) 2 N] 2 MN = C(t-Bu)CH 2 Si(Me) 2 NSiMe 3 . The metallacycles (I) also react with the isoelectronic molecules tert-butyl isocyanide and carbon monoxide to give the unique five-membered ring compounds with exocyclic carbon-carbon double bonds, [(Me 3 Si) 2 N] 2 MXC(=CH 2 )Si(Me) 2 NSiMe 3 , where X is t-BuN or oxygen. The four-membered ring metallacycles (I) give simple coordination complexes of the type [(Me 3 Si) 2 N] 2 MCH 2 Si-(Me) 2 NSiMe 3 (N 3 SiMe 3 ) with trimethylsilyl azide

Boosting the ambipolar performance of solution-processable polymer semiconductors via hybrid side-chain engineering.

Science.gov (United States)

Lee, Junghoon; Han, A-Reum; Yu, Hojeong; Shin, Tae Joo; Yang, Changduk; Oh, Joon Hak

2013-06-26

Ambipolar polymer semiconductors are highly suited for use in flexible, printable, and large-area electronics as they exhibit both n-type (electron-transporting) and p-type (hole-transporting) operations within a single layer. This allows for cost-effective fabrication of complementary circuits with high noise immunity and operational stability. Currently, the performance of ambipolar polymer semiconductors lags behind that of their unipolar counterparts. Here, we report on the side-chain engineering of conjugated, alternating electron donor-acceptor (D-A) polymers using diketopyrrolopyrrole-selenophene copolymers with hybrid siloxane-solubilizing groups (PTDPPSe-Si) to enhance ambipolar performance. The alkyl spacer length of the hybrid side chains was systematically tuned to boost ambipolar performance. The optimized three-dimensional (3-D) charge transport of PTDPPSe-Si with pentyl spacers yielded unprecedentedly high hole and electron mobilities of 8.84 and 4.34 cm(2) V(-1) s(-1), respectively. These results provide guidelines for the molecular design of semiconducting polymers with hybrid side chains.

Si quantum dot structures and their applications

Science.gov (United States)

Shcherbyna, L.; Torchynska, T.

2013-06-01

This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

Comparison of Two Types of Double-J Ureteral Stents that Differ in Diameter and the Existence of Multiple Side Holes along the Straight Portion in Malignant Ureteral Strictures.

Science.gov (United States)

Song, Myung Gyu; Seo, Tae-Seok; Lee, Chang Hee; Kim, Kyeong Ah; Kim, Jun Suk; Oh, Sang Cheul; Lee, Jae-Kwan

2015-06-01

This study was decided to evaluate the impact of diameter and the existences of multiple side holes along the straight portion of double-J ureteral stents (DJUS) on early dysfunction of stents placed for malignant ureteral strictures. Between April 2007 and December 2011, 141 DJUSs were placed via a percutaneous nephrostomy (PCN) tract in 110 consecutive patients with malignant ureteral strictures. 7F DJUSs with multiple side holes in the straight portion were placed in 58 ureters of 43 patients (Group 1). 8F DJUSs with three side holes in the proximal 2-cm of the straight portion were placed in 83 ureters of 67 patients (Group 2). The incidence of early DJUS dysfunction was compared between the two groups, and nephrostographic findings were evaluated in the cases of early dysfunction. Early dysfunction of the DJUS was noted in 14 of 58 patients (24.1 %) in Group 1, which was significantly higher (p = 0.001) than in Group 2 in which only 1 of 83 patients (1.2 %) had early dysfunction of the DJUS. Nephrostographic findings of early dysfunction included dilatation of the pelvicalyceal system, filling defects in the ureteral stent, and no passage of contrast media into the urinary bladder. In malignant ureteral strictures, multiple side holes in the straight portion of the 7-F DJUS seem to cause early dysfunction. The 8F DJUSs with three side holes in the proximal 2-cm of the straight portion may be superior at preventing early dysfunction.

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

International Nuclear Information System (INIS)

Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

2016-01-01

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p"+-p-p"+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10"5. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

Si substrate by chemical solution deposition

Indian Academy of Sciences (India)

ZnMn2O4 active layer for resistance random access memory (RRAM) was ... The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor ... nal electric field were first proposed by Chua (1971). In ... In this work, the spinel ZnMn2O4 films were deposited .... The typical I–V curves plotted in double logarithmic.

Effective gene silencing activity of prodrug-type 2'-O-methyldithiomethyl siRNA compared with non-prodrug-type 2'-O-methyl siRNA.

Science.gov (United States)

Hayashi, Junsuke; Nishigaki, Misa; Ochi, Yosuke; Wada, Shun-Ichi; Wada, Fumito; Nakagawa, Osamu; Obika, Satoshi; Harada-Shiba, Mariko; Urata, Hidehito

2018-07-01

Small interfering RNAs (siRNAs) are an active agent to induce gene silencing and they have been studied for becoming a biological and therapeutic tool. Various 2'-O-modified RNAs have been extensively studied to improve the nuclease resistance. However, the 2'-O-modified siRNA activities were often decreased by modification, since the bulky 2'-O-modifications inhibit to form a RNA-induced silencing complex (RISC). We developed novel prodrug-type 2'-O-methyldithiomethyl (MDTM) siRNA, which is converted into natural siRNA in an intracellular reducing environment. Prodrug-type 2'-O-MDTM siRNAs modified at the 5'-end side including 5'-end nucleotide and the seed region of the antisense strand exhibited much stronger gene silencing effect than non-prodrug-type 2'-O-methyl (2'-O-Me) siRNAs. Furthermore, the resistances for nuclease digestion of siRNAs were actually enhanced by 2'-O-MDTM modifications. Our results indicate that 2'-O-MDTM modifications improve the stability of siRNA in serum and they are able to be introduced at any positions of siRNA. Copyright © 2018 Elsevier Ltd. All rights reserved.

MEMS pressure sensor with maximum performances by using novel back-side direct-exposure concept featuring through glass vias

Science.gov (United States)

Mukhopadhyay, B.; Fritz, M.; Mackowiak, P.; Vu, T. C.; Ehrmann, O.; Lang, K.-D.; Ngo, H.-D.

2013-05-01

Design, simulation, fabrication, and characterization of novel MEMS pressure sensors with new back-side-direct-exposure packaging concept are presented. The sensor design is optimized for harsh environments e.g. space, military, offshore and medical applications. Unbreakable connection between the active side of the Si-sensor and the protecting glass capping was realized by anodic bonding using a thin layer of metal. To avoid signal corruption of the measured pressure caused by an encapsulation system, the media has direct contact to the backside of the Si membrane and can deflect it.

High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

International Nuclear Information System (INIS)

Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

1988-01-01

The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2010-07-15

GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Combined use of a field-plate and narrow p-barriers for a wide-pitch ohmic-side readout of the BELLE double-sided SVD

International Nuclear Information System (INIS)

Ikeda, H.; Matsuda, T.

1997-01-01

We explored wide-pitch ohmic-side structures for the BELLE SVD, where we proposed a field-plate structure combined with narrow p-barriers in between the readout electrodes of 90, 113, 180, and 226 μm-pitch detectors. The effect of the p-barriers was studied with a numerical model to trace the carrier trajectories. The charge collection and sharing properties were examined in practice for prototype small-size detectors with an IR pulse shining from either the junction side or the ohmic side. The channel separation capabilities were also shown to be appropriate under nominal operation conditions. (orig.)

Fast neutron detection at near-core location of a research reactor with a SiC detector

Science.gov (United States)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Photon-assisted Tunneling In Double-barrier Superconducting Tunnel-junctions

NARCIS (Netherlands)

Dierichs, M. M. T. M.; Dieleman, P.; Wezelman, J. J.; Honingh, C. E.; Klapwijk, T. M.

1994-01-01

Double-barrier Nb/Al2O3/Al/Al2O3/Nb tunnel junctions are used as mixing elements in a 345 GHz waveguide mixer. Noise temperatures (double side band) down to 720 K at 3.0 K are obtained without the need to apply a magnetic field to suppress the Josephson current. It is shown that the composite

Elimination behavior of shelter dogs housed in double compartment kennels.

Directory of Open Access Journals (Sweden)

Denae Wagner

Full Text Available For animals in confinement housing the housing structure has tremendous potential to impact well being. Dogs in animal shelters are often housed in one of two types of confinement housing - single kennels and rooms or double compartment kennels and rooms most often separated by a guillotine door. This study examines the effect of housing on the location of elimination behavior in dogs housed in double compartment kennels were the majority of the dogs were walked daily. One side of the kennel contained the food, water and bed and the other side was empty and available except during cleaning time. Location of urination and defecation was observed daily for 579 dogs housed in indoor double compartment kennels for a total of 4440 days of observation. There were 1856 days (41.9% when no elimination was noted in the kennel. Feces, urine or both were observed in the kennel on 2584 days (58.1%. When elimination occurred in the kennel the probability of fecal elimination on the opposite side of the bed/food/water was 72.5% (95% CI 69.05% to 75.69%. The probability of urination on the opposite side of the bed/food/water was 77.4% (95% CI 74.33% to 80.07%. This study demonstrates the strong preference of dogs to eliminate away from the area where they eat, drink and sleep. Double compartment housing not only allows this - it allows staff the ability to provide safe, efficient, humane daily care and confers the added benefits of reducing risks for disease transmission for the individual dog as well as the population.

Texture side information generation for distributed coding of video-plus-depth

DEFF Research Database (Denmark)

Salmistraro, Matteo; Raket, Lars Lau; Zamarin, Marco

2013-01-01

We consider distributed video coding in a monoview video-plus-depth scenario, aiming at coding textures jointly with their corresponding depth stream. Distributed Video Coding (DVC) is a video coding paradigm in which the complexity is shifted from the encoder to the decoder. The Side Information...... components) is strongly correlated, so the additional depth information may be used to generate more accurate SI for the texture stream, increasing the efficiency of the system. In this paper we propose various methods for accurate texture SI generation, comparing them with other state-of-the-art solutions...

Delivery of double singleton pregnancies in a woman with a double uterus, double cervix, and complete septate vagina

Directory of Open Access Journals (Sweden)

Ming-Jie Yang

2015-12-01

Full Text Available Uterine anomalies involving a double uterus, double cervix, also known as didelphys uterus, and complete septate vagina are rarely seen and have an associated fertility problem. However, artificial reproductive technology with embryo transfers can help solve this fertility challenge. Conception in the uterus in just one side is commonly seen for embryos, which are always transferred through the usually used (dilated vagina. We here present a patient with the above uterine anomaly who conceived with the aid of in vitro fertilization and embryo transfer to both uterine cavities under general anesthesia, which resulted in successful double singleton pregnancies with one fetus in each uterus. With intensive prenatal care, the pregnancy course for each fetus was rather uneventful. Although both fetuses were in cephalic presentation, cesarean section was performed at the 39th week of gestation with good outcomes in order to preclude anticipated difficulties if the baby had been delivered through the rarely dilated vagina. However, order of birth between the two fetuses was a crucial decision during the operation.

Development of One Meter Long Double-Sided CeO2 Buffered Ni-5at.%W Templates by Reel-to-Reel Chemical Solution Deposition Route

DEFF Research Database (Denmark)

Yue, Zhao; Konstantopoulou, K.; Wulff, Anders Christian

2013-01-01

High performance long-length coated conductors fabricated using various techniques have attracted a lot of interest recently. In this work, a reel-to-reel design for depositing double-sided coatings on long-length flexible metallic tapes via a chemical solution method is proposed and realized...... layer are 7.2◦ and 5.8◦ with standard deviation of 0.26◦ and 0.34◦, respectively, being indicative of the high quality epitaxial growth of the films prepared in the continuous manner. An all chemical solution derived YBCOLow−TFA/Ce0.9La0.1O2/Gd2Zr2O7/CeO2 structure is obtained on a short sample...

Residual stress and mechanical properties of SiC ceramic by heat treatment

International Nuclear Information System (INIS)

Yoon, H.K.; Kim, D.H.; Shin, B.C.

2007-01-01

Full text of publication follows: Silicon carbide is a compound of relatively low density, high hardness, elevated thermal stability and good thermal conductivity, resulting in good thermal shock resistance. Because of these properties, SiC materials are widely used as abrasives and refractories. In this study, SiC single and poly crystals was grown by the sublimation method using the SiC seed crystal and SiC powder as the source material. Mechanical properties of SiC single and poly crystals are carried out by using the nano-indentation method and small punch test after the heat treatment. As a result, mechanical properties of SiC poly crystal had over double than single. And SiC single and poly crystals were occurred residual stress, but residual stress was shown relaxant properties by the effect of heat treatment. (authors)

An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

2017-01-01

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

Numerical double layer solutions with ionization

International Nuclear Information System (INIS)

Andersson, D.; Soerensen, J.

1982-08-01

Maxwell's equation div D = ro in one dimension is solved numerically, taking ionization into account. Time independent anode sheath and double layer solutions are obtained. By varying voltage, neutral gas pressure, temperature of the trapped ions on the cathode side and density and temperature of the trapped electrones on the anode side, diagrams are constructed that show permissible combinations of these parameters. Results from a recent experiment form a subset. Distribution functions, the Langmuir condition, some scaling laws and a possible application to the lower ionosphere are discussed. (Authors)

Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

Science.gov (United States)

Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

2017-03-01

GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

SiO2 Glass Density to Lower-Mantle Pressures

DEFF Research Database (Denmark)

Petitgirard, Sylvain; Malfait, Wim J.; Journaux, Baptiste

2017-01-01

and present Earth. SiO2 is the main constituent of Earth's mantle and is the reference model system for the behavior of silicate melts at high pressure. Here, we apply our recently developed x-ray absorption technique to the density of SiO2 glass up to 110 GPa, doubling the pressure range...... for such measurements. Our density data validate recent molecular dynamics simulations and are in good agreement with previous experimental studies conducted at lower pressure. Silica glass rapidly densifies up to 40 GPa, but the density trend then flattens to become asymptotic to the density of SiO2 minerals above 60...... GPa. The density data present two discontinuities at similar to 17 and similar to 60 GPa that can be related to a silicon coordination increase from 4 to a mixed 5/6 coordination and from 5/6 to sixfold, respectively. SiO2 glass becomes denser than MgSiO3 glass at similar to 40 GPa, and its density...

Performance analysis of double basin solar still with evacuated tubes

International Nuclear Information System (INIS)

Hitesh N Panchal; Shah, P. K.

2013-01-01

Solar still is a very simple device, which is used for solar distillation process. In this research work, double basin solar still is made from locally available materials. Double basin solar still is made in such a way that, outer basin is exposed to sun and lower side of inner basin is directly connected with evacuated tubes to increase distillate output and reducing heat losses of a solar still. The overall size of the lower basin is about 1006 mm x 325 mm x 380 mm, the outer basin is about 1006 mm x 536 mm x 100 mm Black granite gravel is used to increase distillate output by reducing quantity of brackish or saline water in the both basins. Several experiments have conducted to determine the performance of a solar still in climate conditions of Mehsana (latitude of 23 degree 59' and longitude of 72 degree 38'), Gujarat, like a double basin solar still alone, double basin solar still with different size black granite gravel, double basin solar still with evacuated tubes and double basin solar still with evacuated tubes and different size black granite gravel. Experimental results show that, connecting evacuated tubes with the lower side of the inner basin increases daily distillate output of 56% and is increased by 60%, 63% and 67% with average 10 mm, 20 mm and 30 mm size black granite gravel. Economic analysis of present double basin solar still is 195 days. (authors)

Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

International Nuclear Information System (INIS)

Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

2011-01-01

Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

Materials and devices for quantum information processing in Si/SiGe

Energy Technology Data Exchange (ETDEWEB)

Sailer, Juergen

2010-12-15

, starting from Si/SiGe 2DES, further reduce the degree of freedom of the motion of the electrons. This is accomplished by nano-structured Palladium (Pd) Schottky top-gates on the sample surface with which it is possible to selectively and precisely adjust the 2D sheet carrier density in a leakage and hysteresis free manner. Using this technique, it was possible to realize an electrostatically defined double quantum dot (DQD) in Si/SiGe. By adjusting the gate bias, the DQD could be tuned from the many electron regime, in which directly measurable current transport was still possible, all the way down to the few electron regime. In this few electron regime, current flow became unmeasurable small, which made the application of a charge sensing technique necessary. As a highly sensitive charge-sensor, another quantum dot nearby was used. Changes in the charge occupancy of the DQD smaller than one tenth of an elementary charge could be resolved. Suitability of the device for more sophisticated future experiments in QIP could be shown by measuring charge-stability-diagrams free of any unwanted charge reconfiguration events. (orig.)

Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

KAUST Repository

Chen, Yin

2014-03-10

By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.

Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

KAUST Repository

Chen, Yin; Ould-Chikh, Samy; Abou-Hamad, Edy; Callens, Emmanuel; Mohandas, Janet Chakkamadathil; Khalid, Syed M.; Basset, Jean-Marie

2014-01-01

By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.

New insights into siRNA amplification and RNAi.

Science.gov (United States)

Zhang, Chi; Ruvkun, Gary

2012-08-01

In the nematode Caenorhabditis elegans (C. elegans), gene inactivation by RNA interference can achieve remarkable potency due to the amplification of initial silencing triggers by RNA-dependent RNA polymerases (RdRPs). RdRPs catalyze the biogenesis of an abundant species of secondary small interfering RNAs (siRNAs) using the target mRNA as template. The interaction between primary siRNAs derived from the exogenous double-stranded RNA (dsRNA) trigger and the target mRNA is required for the recruitment of RdRPs. Other genetic requirements for RdRP activities have not been characterized. Recent studies have identified the RDE-10/RDE-11 complex which interacts with the primary siRNA bound target mRNA and acts upstream of the RdRPs. rde-10 and rde-11 mutants show an RNAi defective phenotype because the biogenesis of secondary siRNAs is completely abolished. In addition, the RDE-10/RDE-11 complex plays a similar role in the endogenous RNAi pathway for the biogenesis of a subset of siRNAs targeting recently acquired, duplicated genes.

Evaluation of Single-Bundle versus Double-Bundle PCL Reconstructions with More Than 10-Year Follow-Up

Directory of Open Access Journals (Sweden)

Masataka Deie

2015-01-01

Full Text Available Background. Posterior cruciate ligament (PCL injuries are not rare in acute knee injuries, and several recent anatomical studies of the PCL and reconstructive surgical techniques have generated improved patient results. Now, we have evaluated PCL reconstructions performed by either the single-bundle or double-bundle technique in a patient group followed up retrospectively for more than 10 years. Methods. PCL reconstructions were conducted using the single-bundle (27 cases or double-bundle (13 cases method from 1999 to 2002. The mean age at surgery was 34 years in the single-bundle group and 32 years in the double-bundle group. The mean follow-up period was 12.5 years. Patients were evaluated by Lysholm scoring, the gravity sag view, and knee arthrometry. Results. The Lysholm score after surgery was 89.1±5.6 points for the single-bundle group and 91.9±4.5 points for the double-bundle group. There was no significant difference between the methods in the side-to-side differences by gravity sag view or knee arthrometer evaluation, although several cases in both groups showed a side-to-side difference exceeding 5 mm by the latter evaluation method. Conclusions. We found no significant difference between single- and double-bundle PCL reconstructions during more than 10 years of follow-up.

Nonviral pulmonary delivery of siRNA.

Science.gov (United States)

Merkel, Olivia M; Kissel, Thomas

2012-07-17

target site. In addition, the ideal carrier would be biodegradable (to address difficulties with repeated administration for the treatment of chronic diseases) and would contain targeting moieties to enhance uptake by specific cell types. None of the currently available polymer- and lipid-based formulations meet every one of these requirements, but we introduce here several promising new approaches, including a biodegradable, nonimmunogenic polyester. We also discuss imaging techniques for following the biodistribution according to the administration route. This tracking is crucial for better understanding the translocation and clearance of nanoformulated siRNA subsequent to pulmonary delivery. In the literature, the success of pulmonary siRNA delivery is evaluated solely by relief from or prophylaxis against a disease; side effects are not studied in detail. It also remains unclear which cell types in the lung eventually take up siRNA. These are critical issues for the translational use of pulmonary siRNA formulations; accordingly, we present a flow cytometry technique that can be utilized to differentiate transfected cell populations in a mouse model that expresses transgenic enhanced green fluorescence protein (EGFP). This technique, in which different cell types are identified on the basis of their surface antigen expression, may eventually help in the development of safer carriers with minimized side effects in nontargeted tissues.

Comparison of Two Types of Double-J Ureteral Stents that Differ in Diameter and the Existence of Multiple Side Holes along the Straight Portion in Malignant Ureteral Strictures

Energy Technology Data Exchange (ETDEWEB)

Song, Myung Gyu, E-mail: acube808@naver.com; Seo, Tae-Seok, E-mail: g1q1papa@korea.ac.kr; Lee, Chang Hee, E-mail: chlee86@korea.ac.kr; Kim, Kyeong Ah, E-mail: kahkim@korea.ac.kr [Korea University College of Medicine, Department of Radiology, Korea University Guro Hospital (Korea, Republic of); Kim, Jun Suk, E-mail: kjs6651@kumc.or.kr; Oh, Sang Cheul, E-mail: sachoh@korea.ac.kr [Korea University College of Medicine, Department of Oncology, Korea University Guro Hospital (Korea, Republic of); Lee, Jae-Kwan, E-mail: jklee38@korea.ac.kr [Korea University College of Medicine, Department of Gynecology, Korea University Guro Hospital (Korea, Republic of)

2015-06-15

PurposeThis study was decided to evaluate the impact of diameter and the existences of multiple side holes along the straight portion of double-J ureteral stents (DJUS) on early dysfunction of stents placed for malignant ureteral strictures.MethodsBetween April 2007 and December 2011, 141 DJUSs were placed via a percutaneous nephrostomy (PCN) tract in 110 consecutive patients with malignant ureteral strictures. 7F DJUSs with multiple side holes in the straight portion were placed in 58 ureters of 43 patients (Group 1). 8F DJUSs with three side holes in the proximal 2-cm of the straight portion were placed in 83 ureters of 67 patients (Group 2). The incidence of early DJUS dysfunction was compared between the two groups, and nephrostographic findings were evaluated in the cases of early dysfunction.ResultsEarly dysfunction of the DJUS was noted in 14 of 58 patients (24.1 %) in Group 1, which was significantly higher (p = 0.001) than in Group 2 in which only 1 of 83 patients (1.2 %) had early dysfunction of the DJUS. Nephrostographic findings of early dysfunction included dilatation of the pelvicalyceal system, filling defects in the ureteral stent, and no passage of contrast media into the urinary bladder.ConclusionsIn malignant ureteral strictures, multiple side holes in the straight portion of the 7-F DJUS seem to cause early dysfunction. The 8F DJUSs with three side holes in the proximal 2-cm of the straight portion may be superior at preventing early dysfunction.

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Energy Technology Data Exchange (ETDEWEB)

Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

Energy Technology Data Exchange (ETDEWEB)

Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V. [Chelyabinsk State University (Russian Federation); Gudovskikh, A. S. [Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation); Shvarts, M. Z., E-mail: shvarts@scell.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It is shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.

In situ resistivity of endotaxial FeSi{sub 2} nanowires on Si(110)

Energy Technology Data Exchange (ETDEWEB)

Tobler, S. K.; Bennett, P. A., E-mail: peter.bennett@asu.edu [Physics Department, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2015-09-28

We present in situ ultra-high vacuum measurements of the resistivity ρ of self-assembled endotaxial FeSi{sub 2} nanowires (NWs) on Si(110) using a variable-spacing two-point method with a moveable scanning tunneling microscope tip and fixed contact pad. The resistivity at room temperature was found to be nearly constant down to NW width W = 4 nm, but rose sharply to nearly double the bulk value at W = 3 nm. These data are not well-fit by a simple Fuch-Sondheimer model for boundary scattering, suggesting that other factors, possibly quantum effects, may be significant at the smallest dimensions. For a NW width of 4 nm, partial oxidation increased ρ by approximately 50%, while cooling from 300 K to 150 K decreased ρ by approximately 10%. The relative insensitivity of ρ to NW size or oxidation or cooling is attributed to a high concentration of vacancies in the FeSi{sub 2} structure, with a correspondingly short length for inelastic electron scattering, which obscures boundary scattering except in the smallest NWs. It is remarkable that the vacancy concentration persists in very small structures.

Photovoltaic performance of bifacial dye sensitized solar cell using chemically healed binary ionic liquid electrolyte solidified with SiO2 nanoparticles

International Nuclear Information System (INIS)

Cosar, Burak; Icli, Kerem Cagatay; Yavuz, Halil Ibrahim; Ozenbas, Macit

2013-01-01

Highlights: ► A bifacial DSSC is realized and irradiated from front and rear sides. ► Maximum efficiency was found for 70% PMII/30% (EMIB(CN) 4 ) electrolyte composition. ► A significant increase in photocurrent using 0.1 M GuSCN and 0.4 M NMB was observed. ► Addition of SiO 2 nanoparticles to the electrolyte enhanced photovoltaic efficiency. ► Dispersed SiO 2 particles are found to be more efficient compared to SiO 2 overlayer. - Abstract: In this study, we investigated the effect of electrolyte composition, photoanode thickness, and the additions of GuSCN (guanidinium thiocyanate), NMB (N-methylbenimidazole), and SiO 2 on the photovoltaic performance of DSSCs (dye sensitized solar cells). A bifacial DSSC is realized and irradiated from front and rear sides. The devices give maximum photovoltaic efficiencies for 70% PMII (1-propyl-3-methyl-imidazolium iodide)/30% (EMIB(CN) 4 ) (1-ethyl-3-methyl-imidazolium tetracyanoborate) electrolyte composition and 10 μm thick photoanode coating which is considered to be the ideal coating thickness for the diffusion length of electrolyte and dye absorption. A significant increase in the photocurrent for DSSCs with optimum molarity of 0.1 M GuSCN was observed due to decreased recombination which is believed to be surface passivation effect at photoanode electrolyte interface suppressing recombination rate. Moreover, optimum NMB molarity was found to be 0.4 for maximum efficiency. Addition of SiO 2 to the electrolyte both as an overlayer and dispersed particles enhanced rear side illuminated cells where dispersed particles are found to be more efficient for the front side illuminated cells due to additional electron transport properties. Best rear side illuminated cell efficiency was 3.2% compared to front side illuminated cell efficiency of 4.2% which is a promising result for future rear side dye sensitized solar cell applications where front side illumination is not possible like tandem structures and for cells

Fabrication of a vertical sidewall using double-sided anisotropic etching of 〈1 0 0〉 oriented silicon

International Nuclear Information System (INIS)

Kim, Hyun-Seok; Bang, Yong-Seung; Song, Eun-Seok; Kim, Yong-Kweon; Kim, Jung-Mu; Ji, Chang-Hyeon

2012-01-01

A double-sided wet etch process has been proposed to fabricate vertical structures in 〈1 0 0〉 oriented silicon substrate. Both sides of a {1 0 0} silicon wafer have been patterned identically along the 〈1 1 0〉 direction, and etched using potassium hydroxide (KOH) solution. By precisly controlling the etch time, using etch-timer structure and additive control, structures with smooth and vertical {1 1 0} sidewalls have been fabricated at the edges of a rectangular opening without undercut. Rectangular through-holes, bridges and cantilevers have been constructed using the proposed process. The measured average surface roughness of the vertical sidewall was 481 nm, which has been further reduced to 217 nm and 218 nm by postetching using a KOH–IPA and TMAH–Triton mixture, respectively. Slanted {4 1 1} planes exposed at the concave corners during the vertical etch process have been successfully removed or diminished by the postetching process. A bridge structure with a high aspect ratio of 39:1 has been fabricated, and cantilevers without undercutting were successfully constructed by applying the compensation technique. The proposed process can potentially be utilized in place of the deep reactive ion etching process for the fabrication of structures having vertical through-holes, such as through-silicon vias, high aspect ratio springs and filters for microfluidic applications. (paper)

Synthesis of waterborne polyurethane containing alkoxysilane side groups and the properties of the hybrid coating films

Energy Technology Data Exchange (ETDEWEB)

Li, Qi; Guo, Longhai [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Qiu, Teng, E-mail: qiuteng@mail.buct.edu.cn [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Xiao, Weidong; Du, Dianxing [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Li, Xiaoyu, E-mail: lixy@mail.buct.edu.cn [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China)

2016-07-30

Highlights: • A diol with side-chain trimethoxysilane (DEA-Si) was synthesized using 3-(methacryloxypropyl)trimethoxysilane (MAPTS) and diethanolamine (DEA). • The crosslinking structure could in situ formed within the WPU matrix through sol-gel process. • The Si tends to shift to the polymer-air interface due to the flexible long alkyl-ester side chain. • The incorporation of DEA-Si enhanced mechanical and surface hydrophobic properties of WPU films. - Abstract: A series of waterborne polyurethane (WPU) containing alkoxysilane side groups were synthesized by using the dihydroxy functionalized alkoxysilane. The diol with trimethoxysilane groups at the side chains was synthesized via Michael addition between 3-(methacryloxypropyl)trimethoxysilane (MAPTS) and diethanolamine (DEA). The silane diol was applied as the chain extender for the NCO-endcapped prepolymer of isophorone diisocyanate, polycarbonate diol, 2,2-bis(hydroxymethyl) butyric acid and 1,4-butanediol. The products with the silane content varied from 1.2 to 16.5 wt% were dispersed in water after neutralization. The effect of the silane diol on the particle size and morphology of the WPU dispersion was studied by dynamic light scattering (DLS) and transmission electron microscopy (TEM), respectively. X-ray photoelectron spectroscopy (XPS) characterization was carried out on the coating film of the WPU, revealing that the long flexible side chain is favorable for the silane components to emigrate toward the film surface and crosslink during the film formation process. As a result, both the surface contact angle to water and water adsorption of the WPU coating films increased with the silane content. Furthermore, the mechanical properties including the modulus and tensile strength of the films were also improved by the incorporation of silane diol.

Estimation of critical thickness of Stranski-Krastanow transition in GeSi/Sn/Si system

Science.gov (United States)

Lozovoy, K. A.; Pishchagin, A. A.; Kokhanenko, A. P.; Voitsekhovskii, A. V.

2017-11-01

In this paper Stranski-Krastanow growth of Ge x Si1-x epitaxial layers on the Si(001) surface with pre-deposited tin layer with the thickness less than 1 ML is considered. For the calculations of critical thickness of transition from 2D to 3D growth in this paper a theoretical model based on general nucleation theory is used. This model is specified by taking into account dependencies of elastic modulus, lattices mismatch and surface energy of side facet on the composition x, as well as change in the adatoms diffusion coefficient and surface energy of the substrate in the presence of tin. As a result, dependencies of critical thickness of Stranski-Krastanow transition on compositon x and temperature are obtained. The simulated results are in a good agreement with experimentally observed results.

Detection of subsurface core-level shifts in Si 2p core-level photoemission from Si(111)-(1x1):As

Energy Technology Data Exchange (ETDEWEB)

Paggel, J.J. [Philipps-Universitaet Marburg (Germany); Hasselblatt, M.; Horn, K. [Fritz-Haber Institut der Max-Planck-Gesellschraft, Berlin (Germany)] [and others

1997-04-01

The (7 x 7) reconstruction of the Si(111) surface arises from a lowering energy through the reduction of the number of dangling bonds. This reconstruction can be removed by the adsorption of atoms such as hydrogen which saturate the dangling bonds, or by the incorporation of atoms, such as arsenic which, because of the additional electron it possesses, can form three bonds and a nonreactive lone pair orbital from the remaining two electrons. Core and valence level photoemission and ion scattering data have shown that the As atoms replace the top silicon atoms. Previous core level spectra were interpreted in terms of a bulk and a single surface doublet. The authors present results demonstrate that the core level spectrum contains two more lines. The authors assign these to subsurface silicon layers which also experience changes in the charge distribution when a silicon atom is replaced by an arsenic atom. Subsurface core level shifts are not unexpected since the modifications of the electronic structure and/or of photohole screening are likely to decay into the bulk and not just to affect the top-most substrate atoms. The detection of subsurface components suggests that the adsorption of arsenic leads to charge flow also in the second double layer of the Si(111) surface. In view of the difference in atomic radius between As and Si, it was suggested that the (1 x 1): As surface is strained. The presence of charge rearrangement up to the second double layer implies that the atomic coordinates also exhibit deviations from their ideal Si(111) counterparts, which might be detected through a LEED I/V or photoelectron diffraction analysis.

Effect of Ni on eutectic structural evolution in hypereutectic Al-Mg2Si cast alloys

International Nuclear Information System (INIS)

Li Chong; Wu Yaping; Li Hui; Wu Yuying; Liu Xiangfa

2010-01-01

Research highlights: → By the injection of rod-like NiAl 3 phase in Al-Mg 2 Si alloys, Al-Mg 2 Si binary eutectic structure gradually evolves into Al-Mg 2 Si-NiAl 3 ternary eutectic. → The ternary eutectic presents a unique double rod structure that rod-like NiAl 3 and Mg 2 Si uniformly distribute in Al matrix. → The mechanism of structural evolution was analyzed in terms of the detailed microstructural observations. → The high temperature (350 deg. C) tensile strength of the alloy increases by 23% due to the eutectic structural evolution. - Abstract: The aim of this work is to investigate the eutectic structural evolution of hypereutectic Al-20% Mg 2 Si with Ni addition under a gravity casting process. Three-dimensional morphologies of eutectic phases were observed in detail using field emission scanning electron microscopy, after Al matrix was removed by deep etching or extraction. The results show that Al-Mg 2 Si binary eutectic gradually evolves into Al-Mg 2 Si-NiAl 3 ternary eutectic with the increase of Ni content, and flake-like eutectic Mg 2 Si transforms into rods. The ternary eutectic presents a unique double rod structure that rod-like NiAl 3 and Mg 2 Si uniformly distribute in Al matrix. Further, the high temperature (350 deg. C) tensile strength of the alloy increases by 23% due to the eutectic structure evolution, and the mechanism of structural evolution was discussed and analyzed in terms of the detailed microstructural observations.

Early-transition-metal ketenimine complexes. Synthesis, reactivity, and structural characterization of complexes with. eta. sup 2 (C,N)-ketenimine groups bound to the halogenobis((trimethylsilyl)cyclopentadienyl)niobium unit. X-ray structure of Nb(. eta. sup 5 -C sub 5 H sub 4 SiMe sub 3 ) sub 2 Cl(. eta. sup 2 (C,N)-PhN double bond C double bond CPh sub 2 )

Energy Technology Data Exchange (ETDEWEB)

Antinolo, A.; Fajardo, M.; Lopez Mardomingo, C.; Otero, A. (Univ. de Alcala de Henares (Spain)); Mourad, Y.; Mugnier, Y. (Centre National de la Recherche Scientifique, Dijon (France)); Sanz-Aparicio, J.; Fonseca, I.; Florencio, F. (CSIC, Madrid (Spain))

1990-11-01

The reaction of Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}X (X = Cl, Br) with 1 equiv of various ketenimines, R{sup 1}N{double bond}C{double bond}CR{sup 2}R{sup 3}, leads to the niobium derivatives Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}X({eta}{sup 2}(C,N)-R{sup 1}N{double bond}C{double bond}CR{sup 2}R{sup 3}) (1, X = Cl, R{sup 1} = R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 2, X = Cl, R{sup 1} = p-CH{sub 3}-C{sub 6}H{sub 4}, R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 3, X = Br, R{sup 1} = R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 4, X = Br, R{sup 1} = p-CH{sub 3}-C{sub 6}H{sub 4}, R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 5, X = Cl, R{sup 1} = R{sup 2} = C{sub 6}H{sub 5}, R{sup 3} = CH{sub 3}; 6, X = Br, R{sup 1} = R{sup 2} = C{sub 6}H{sub 5}, R{sup 3} = CH{sub 3}) with the expected ketenimine C{double bond}N bonding mode. Reduction of 1 with 1 equiv of Na/Hg gives the complex Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}({eta}{sup 2}(C,N)-PhN{double bond}C{double bond}CPh{sub 2}) (9) as a paramagnetic compound. The reduction of 9 with 1 equiv of Na/Hg and the subsequent addition of a proton source (ethanol) leads to the iminoacyl compound Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}(CRNR{sup 1}) (10, R = CH(Ph{sub 2}), R{sup 1} = Ph). The one- and two-electron reductions of 1 have been studied by cyclic voltammetry experiments. The structure of 1 was determined by single-crystal X-ray diffractometry: a = 24.4904 (14) {angstrom}, b = 11.0435 (04) {angstrom}, c = 26.6130 (15) {angstrom}, {beta} = 109.890 (5){degree}, monoclinic, space group C2/c, Z = 8, V = 6,768.4 (5) {angstrom}{sup 3}, {rho}{sub calcd} = 1.3194 g/mL, R = 0.048, R{sub w} = 0.060 based on 4,806 observed reflections. The structure contains a niobium atom bonded to two cyclopentadienyl rings in a {eta}{sup 5} fashion; the coordination of the metal is completed by a Cl atom and a {eta}{sup 2}(C,N)-bonded ketenimine ligand.

Thermal optimization of primary side in double-tube OTSG

International Nuclear Information System (INIS)

Wei Xinyu; Dai Chunhui; Hou Suxia; Tai Yun; Zhao Fuyu

2011-01-01

Once-through steam generator (OTSG) is usually used in the integrated nuclear power plants which require smaller volume and better effect of heat transfer. The double-tube OTSG component which is composed of straight tube outside and helical tube inside is presented in this paper. The primary fluid is divided into two parts, one is in the inner tube and the other is in the gap among outer tubes. The flow distribution ratio of the primary fluid obviously affects the heat transfer. Thus, the problem of optimization emerges, i.e. how to find an optimal flow distribution ratio with a maximum heat exchange. Analyzed the effects of the distribution ratio on heat transfer, the optimal distribution ratio is obtained by the constrained nonlinear optimization method. Subsequently, the optimal distribution ratio is achieved by a throttling set in the entrance of the inner tube. The result is in substantial agreement with the literature. (author)

Simultaneous double-rod rotation technique in posterior instrumentation surgery for correction of adolescent idiopathic scoliosis.

Science.gov (United States)

Ito, Manabu; Abumi, Kuniyoshi; Kotani, Yoshihisa; Takahata, Masahiko; Sudo, Hideki; Hojo, Yoshihiro; Minami, Akio

2010-03-01

The authors present a new posterior correction technique consisting of simultaneous double-rod rotation using 2 contoured rods and polyaxial pedicle screws with or without Nesplon tapes. The purpose of this study is to introduce the basic principles and surgical procedures of this new posterior surgery for correction of adolescent idiopathic scoliosis. Through gradual rotation of the concave-side rod by 2 rod holders, the convex-side rod simultaneously rotates with the the concave-side rod. This procedure does not involve any force pushing down the spinal column around the apex. Since this procedure consists of upward pushing and lateral translation of the spinal column with simultaneous double-rod rotation maneuvers, it is simple and can obtain thoracic kyphosis as well as favorable scoliosis correction. This technique is applicable not only to a thoracic single curve but also to double major curves in cases of adolescent idiopathic scoliosis.

Synthesis, characterization, and immune efficacy of layered double hydroxide@SiO2 nanoparticles with shell-core structure as a delivery carrier for Newcastle disease virus DNA vaccine

Directory of Open Access Journals (Sweden)

Zhao K

2015-04-01

Full Text Available Kai Zhao,1,* Guangyu Rong,1,2,* Chen Guo,1 Xiaomei Luo,1 Hong Kang,1 Yanwei Sun,1,3 Chunxiao Dai,4 Xiaohua Wang,1 Xin Wang,1 Zheng Jin,4 Shangjin Cui,3 Qingshen Sun1 1Key Laboratory of Microbiology, School of Life Science, Heilongjiang University, Harbin, People’s Republic of China; 2Department of Avian Infectious Disease, Shanghai Veterinary Research Institute of Chinese Academy of Agricultural Sciences, Shanghai, People’s Republic of China; 3Division of Swine Infectious Diseases, State Key Laboratory of Veterinary Biotechnology, Harbin Veterinary Research Institute of Chinese Academy of Agricultural Sciences, Harbin, People’s Republic of China; 4Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, Heilongjiang University, Harbin, People’s Republic of China *These authors contributed equally to this work Abstract: Layered double hydroxide (LDH@SiO2 nanoparticles were developed as a delivery carrier for the plasmid DNA expressing the Newcastle disease virus F gene. The LDH was hydrotalcite-like materials. The plasmid DNA encapsulated in the LDH@SiO2 nanoparticles (pFDNA-LDH@SiO2-NPs was prepared by the coprecipitation method, and the properties of pFDNA-LDH@SiO2-NPs were characterized by transmission electron microscopy, zeta potential analyzer, Fourier transform infrared spectroscopy, and X-ray diffraction analysis. The results demonstrated that the pFDNA-LDH@SiO2-NPs had a regular morphology and high stability with a mean diameter of 371.93 nm, loading capacity of 39.66%±0.45%, and a zeta potential of +31.63 mV. A release assay in vitro showed that up to 91.36% of the total plasmid DNA could be sustainably released from the pFDNA-LDH@SiO2-NPs within 288 hours. The LDH@SiO2 nanoparticles had very low toxicity. Additionally, their high transfection efficiency in vitro was detected by fluorescent microscopy. Intranasal immunization of specific pathogen-free chickens with pFDNA-LDH@SiO2-NPs

Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

Science.gov (United States)

Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

1998-04-01

We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

Microstructure and mechanical performance of depositing CuSi3 Cu alloy onto 30CrMnSi steel plate by the novel consumable and non-consumable electrodes indirect arc welding

International Nuclear Information System (INIS)

Wang, Jun; Cao, Jian; Feng, Jicai

2010-01-01

A novel consumable and non-consumable electrodes indirect arc welding (CNC-IAW) with low heat input was successfully applied in depositing CuSi 3 Cu alloy onto 30CrMnSi steel plate. The indirect arc was generated between the consumable and non-consumable welding torch. The microstructure of the deposited weld was analyzed by means of scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and optical microscopy (OM). The results showed that the dilution ratio of the bead-on-plate weld was controlled no higher than 5% and the deleterious iron picking up was effectively restrained. The deposited metal mainly consisted of ε-Cu solid solution and a small amount of Fe 2 Si phase. In the interfacial zone between the deposited metal and base metal, the thickness of the zone changed from thick to thin and the microstructure changed from complex to simple from the middle to both sides. In the middle of the interfacial zone, the microstructure presented three sub-layers consisting of Fe 3 Si (L)/Fe 3 Si (S) + ε-Cu/α-Fe. In the both sides of the interfacial zone, the microstructure presented single α-Fe layer. The formation mechanism of the interfacial zone could be successfully explained by the formation of the Fe liquid-solid phase zone adjacent to the Fe base metal and the interfusion between Fe and Si. The average compressive shear strength reached 321 MPa and its fracture morphology mainly belonged to ductile fracture.

Design and status of the 250 T - bending magnets for the 15 GeV Harmonic Double Sided Microtron for MAMI

CERN Document Server

Thomas, A; Kaiser, K H; Kreidel, H J; Ludwig-Mertin, U; Seidel, M

2002-01-01

The recirculating system of the Harmonic Double Sided Microtron (HDSM) for MAMI (Mainz Microtron) consists of four large bending magnets, which act like 90 degrees - mirrors for all beams. For the compensation of the strong vertical defocusing resulting from the -45deg. pole face rotation a special pole profile was chosen, leading to the appropriate field decay normal to the straight front edge. The machining procedure for a high quality and precise surface of the partly concave poles was worked out in collaboration with the manufacturer. 3D-codes (TOSCA and IDEAS) were used to optimise both magnetic and mechanical properties of the magnets. As a result, it was decided to build the iron core essentially only from two 125t-pieces made of high permeable cast iron. The coils were designed for a minimum temperature increase at a given power consumption and for high reliability by avoiding internal tube brazing. The first of the four magnets has been delivered end of 2001 and was transported through narrow buildin...

Precision scans of the Pixel cell response of double sided 3D Pixel detectors to pion and X-ray beams

CERN Document Server

Mac Raighne, A; Crossley, M; Alianelli, L; Lozano, M; Dumps, R; Fleta, C; Collins, P; Rodrigues, E; Sawhney, K J S; Tlustos, L; Pennicard, D; Buytaert, J; Stewart, G; Parkes, C; Eklund, L; Campbell, M; Marchal, J; Akiba, K; Pellegrini, G; Llopart, X; Plackett, R; Maneuski, D; Gligorov, V V; Tartoni, N; Nicol, M; Bates, R; Gallas, A; Gimenez, E N; van Beuzekom, M; John, M

2011-01-01

Three-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55 m m pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0 +/- 0.5\\% is measured. After a 10 degrees rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises ...

SiPM arrays and miniaturized readout electronics for compact gamma camera

Energy Technology Data Exchange (ETDEWEB)

Dinu, N., E-mail: dinu@lal.in2p3.fr [Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay (France); Imando, T. Ait; Nagai, A. [Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay (France); Pinot, L. [Laboratory of Imaging and Modelisation in Neurobiology and Cancerology, IN2P3, CNRS, Orsay (France); Puill, V. [Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay (France); Callier, S. [Omega Microelectronics Group, CNRS, Palaiseau (France); Janvier, B.; Esnault, C.; Verdier, M.-A. [Laboratory of Imaging and Modelisation in Neurobiology and Cancerology, IN2P3, CNRS, Orsay (France); Raux, L. [Omega Microelectronics Group, CNRS, Palaiseau (France); Vandenbussche, V.; Charon, Y.; Menard, L. [Laboratory of Imaging and Modelisation in Neurobiology and Cancerology, IN2P3, CNRS, Orsay (France)

2015-07-01

This article reports on the design and features of a very compact and light gamma camera based on SiPM arrays and miniaturized readout electronics dedicated to tumor localization during radio-guided cancer surgery. This gamma camera, called MAGICS, is composed of four (2×2) photo-detection elementary modules coupled to an inorganic scintillator. The 256 channels photo-detection system covers a sensitive area of 54×53 m{sup 2}. Each elementary module is based on four (2×2) SiPM monolithic arrays, each array consisting of 16 SiPM photo-sensors (4×4) with 3×3 mm{sup 2} sensitive area, coupled to a miniaturized readout electronics and a dedicated ASIC. The overall dimensions of the electronics fit the size of the detector, enabling to assemble side-by-side several elementary modules in a close-packed arrangement. The preliminary performances of the system are very encouraging, showing an energy resolution of 9.8% and a spatial resolution of less than 1 mm at 122 keV.

Magnetic properties and crystal texture of Co alloy thin films prepared on double bias Cr

Science.gov (United States)

Deng, Y.; Lambeth, D. N.; Lee, L.-L.; Laughlin, D. E.

1993-05-01

A double layer Cr film structure has been prepared by sputter depositing Cr on single crystal Si substrates first without substrate bias and then with various substrate bias voltages. Without substrate bias, Cr{200} texture grows on Si at room temperature; thus the first Cr layer acts like a seed Cr layer with the {200} texture, and the second Cr layer, prepared with substrate bias, tends to replicate the {200} texture epitaxially. CoCrTa and CoNiCr films prepared on these double Cr underlayers, therefore, tend to have a {112¯0} texture with their c-axes oriented in the plane of the film. At the same time, the bias sputtering of the second Cr layer increases the coercivity of the subsequently deposited magnetic films significantly. Comparison studies of δM curves show that the use of the double Cr underlayers reduces the intergranular exchange interactions. The films prepared on the Si substrates have been compared with the films prepared on canasite and glass substrates. It has also been found that the magnetic properties are similar for films on canasite and on glass.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-03-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-12-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N + pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g  = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Microstructure and Properties of Porous Si3N4/Dense Si3N4 Joints Bonded Using RE–Si–Al–O–N (RE = Y or Yb Glasses

Directory of Open Access Journals (Sweden)

Ling Li

2017-11-01

Full Text Available The joining of porous Si3N4 to dense Si3N4 ceramics has been successfully performed using mixed RE2O3 (RE = Y or Yb, Al2O3, SiO2, and α-Si3N4 powders. The results suggested that the α-Si3N4 powders partly transformed into β-SiAlON and partly dissolved into oxide glass to form oxynitride glass. Thus, composites of glass/β-SiAlON-ceramic formed in the seam of joints. Due to the capillary action of the porous Si3N4 ceramic, the molten glass solder infiltrated into the porous Si3N4 ceramic side during the joining process and formed the “infiltration zone” with a thickness of about 400 μm, which contributed to the heterogeneous distribution of the RE–Si–Al–O–N glasses in the porous Si3N4 substrate. In-situ formation of β-SiAlON in the seam resulted in a high bonding strength. The maximum bending strength of 103 MPa and 88 MPa was reached for the porous Si3N4/dense Si3N4 joints using Y–Si–Al–O–N and Yb–Si–Al–O–N glass solders, respectively.

Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

International Nuclear Information System (INIS)

Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

2009-01-01

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

Synergistic effect of displacement damage, helium and hydrogen on microstructural change of SiC/SiC composites fabricated by reaction bonding process

Energy Technology Data Exchange (ETDEWEB)

Taguchi, T.; Igawa, N.; Wakai, E.; Jitsukawa, S. [Japan Atomic Energy Agency, Naga-gun, Ibaraki-ken (Japan); Hasegawa, A. [Tohoku Univ., Dept. of Quantum Science and Energy Engr., Sendai (Japan)

2007-07-01

Full text of publication follows: Continuous silicon carbide (SiC) fiber reinforced SiC matrix (SiC/SiC) composites are known to be attractive candidate materials for first wall and blanket components in fusion reactors. In the fusion environment, helium and hydrogen are produced and helium bubbles can be formed in the SiC by irradiation of 14-MeV neutrons. Authors reported the synergistic effect of helium and hydrogen as transmutation products on swelling behavior and microstructural change of the SiC/SiC composites fabricated by chemical vapor infiltration (CVI) process. Authors also reported about the fabrication of high thermal conductive SiC/SiC composites by reaction bonding (RB) process. The matrix fabricated by RB process has different microstructures such as bigger grain size of SiC and including Si phase as second phase from that by CVI process. It is, therefore, investigated the synergistic effect of displacement damage, helium and hydrogen as transmutation products on the microstructure of SiC/SiC composite by RB process in this study. The SiC/SiC composites by RB process were irradiated by the simultaneous triple ion irradiation (Si{sup 2+}, He{sup +} and H{sup +}) at 800 and 1000 deg. C. The displacement damage was induced by 6.0 MeV Si{sup 2+} ion irradiation up to 10 dpa. The microstructures of irradiated SiC/SiC composites by RB process were observed by TEM. The double layer of carbon and SiC as interphase between fiber and matrix by a chemical vapor deposition (CVD) was coated on SiC fibers in the SiC/SiC composites by RB process. The TEM observation revealed that He bubbles were formed both in the matrix by RB and SiC interphase by CVD process. Almost all He bubbles were formed at the grain boundary in SiC interphase by CVD process. On the other hand, He bubbles were formed both at the grain boundary and in Si grain of the matrix by RB process. The average size of He bubbles in the matrix by RB was smaller than that in SiC interphase by CVD

Conformational changes in fragments D and double-D from human fibrin(ogen) upon binding the peptide ligand Gly-His-Arg-Pro-amide.

Science.gov (United States)

Everse, S J; Spraggon, G; Veerapandian, L; Doolittle, R F

1999-03-09

The structure of fragment double-D from human fibrin has been solved in the presence and absence of the peptide ligands that simulate the two knobs exposed by the removal of fibrinopeptides A and B, respectively. All told, six crystal structures have been determined, three of which are reported here for the first time: namely, fragments D and double-D with the peptide GHRPam alone and double-D in the absence of any peptide ligand. Comparison of the structures has revealed a series of conformational changes that are brought about by the various knob-hole interactions. Of greatest interest is a moveable "flap" of two negatively charged amino acids (Glubeta397 and Aspbeta398) whose side chains are pinned back to the coiled coil with a calcium atom bridge until GHRPam occupies the beta-chain pocket. Additionally, in the absence of the peptide ligand GPRPam, GHRPam binds to the gamma-chain pocket, a new calcium-binding site being formed concomitantly.

Keggin type polyoxometalate H4[αSiW12O40].nH2O as intercalant for hydrotalcite

Directory of Open Access Journals (Sweden)

Neza Rahayu Palapa

2017-06-01

Full Text Available The synthesis of hydrotalcite and polyoxometalate H4[αSiW12O40].nH2O with the ratio (2:1, (1:1, (1:2 and (1:3 has been done. The product of intercalation was characterized using FT-IR spectrophotometer, XRD, and TG-DTA. Polyoxometalate H4[αSiW12O40].nH2O intercalated layered double hydroxide was optimised to use as adsorbent Congo red dye. Characterization using FT-IR was not showing the optimal insertion process. The result using XRD characterization was showed successful of polyoxometalate H4[αSiW12O40].nH2O inserted layered double hydroxide with a ratio (1:1 which the basal spacing was expanded from 7,8 Ȧ to 9,81 Ȧ. Furthermore, the thermal analysis was performed using TG-DTA. The result show that the decomposition of polyoxometalate H4[αSiW12O40].nH2O intercalated  hydrotalcite with ratio (1:1 was occured at 80oC to 400oC with a loss of OH in the layer at 150oC to 220oC, and then the decomposition of the compound polyoxometalate H4[αSiW12O40].nH2O at 350oC to 420oC. Keywords: Hydrotalcite, Layered Double Hydroxide, Polyoxometalate, Intercalation

The development of a silicon multiplicity detector system

Energy Technology Data Exchange (ETDEWEB)

Beuttenmuller, R.H.; Kraner, H.W.; Lissauer, D.; Makowiecki, D.; Polychronakos, V.; Radeka, V.; Sondericker, J.; Stephani, D. [Brookhaven National Laboratory, Upton, NY (United States); Barrette, J.; Hall, J.; Mark, S.K.; Pruneau, C.A. [McGill Univ., Montreal, Quebec (Canada); Wolfe, D. [Univ. of New Mexico, Albuquerque (United States); Borenstein, S.R. [York College-CUNY, Jamaica, NY (United States)

1991-12-31

The physics program and the design criteria for a Silicon Pad Detector at RHIC are reviewed. An end cap double sided readout detector configuration for RHIC is presented. Its performance as an on-line and off-line centrality tagging device is studied by means of simulations with Fritiof as the event generator. The results of an in-beam test of a prototype double-sided Si-detector are presented. Good signal-to-noise ratio are obtained with front junction and the resistive back side readout. Good separation between one and two minimum-ionizing particle signals is achieved.

Single-Layer Limit of Metallic Indium Overlayers on Si(111).

Science.gov (United States)

Park, Jae Whan; Kang, Myung Ho

2016-09-09

Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one sqrt[7]×sqrt[3] phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other sqrt[7]×sqrt[7] phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.

V3Si multifilamentary superconductor with high overall Jc

International Nuclear Information System (INIS)

Takeuchi, Takao; Inoue, Kiyoshi; Kosuge, Michio; Iijima, Yasuo; Watanabe, Kazuo

1994-01-01

V 3 Si is one of the A15-type superconducting compounds from which single crystals can be quite easily obtained due to the nature of the equilibrium phase diagram. Thus, the fundamental characteristics of A15 compounds (such as electronic structure and cubic-to-tetragonal structural transformation) have been studied with this compound. V 3 Si is, however, also promising in practical use as an alternative to Nb 3 Sn for high field magnets, since the upper critical field H c2 (4.2 K) is more than 20 T. Although the open-quotes bronze process,close quotes the established commercial process to produce Nb 3 Sn conductors, is also available for V 3 Si, the ternary section of the Cu-V-Si phase diagram indicates two diffusion paths are possible: One from the bronze with low Si content (Si 3 Si, and the other from the bronze with higher Si content to V 3 Si via V 5 Si 3 . The high Si bronze is likely to be advantageous in reducing the bronze volume fraction and hence achieving high overall critical current density J c . This is because the initially formed V 5 Si 3 is eventually converted to V 3 Si as long as the total proportion of V to Si in the composite (overall V/Si molar ratio) is kept around 3. However, long times at high temperatures are necessary for appreciable V 3 Si layer growth, thereby yielding grain growth of V 3 Si and lowering the J c of the V 3 Si compound and the overall J c accordingly. In the present study, in order to improve the overall J c , the authors have realized ∼1μm filament diameter by preparing a double-stacked Cu-8.5at.%Si/V composite. The primary bundle is sheathed with a Ta tube. The Si in the bronze inside the Ta is available only for the diffusion reaction, and the overall V/Si ratios is ∼3

Double-Sided Electrochromic Device Based on Metal-Organic Frameworks.

Science.gov (United States)

Mjejri, Issam; Doherty, Cara M; Rubio-Martinez, Marta; Drisko, Glenna L; Rougier, Aline

2017-11-22

Devices displaying controllably tunable optical properties through an applied voltage are attractive for smart glass, mirrors, and displays. Electrochromic material development aims to decrease power consumption while increasing the variety of attainable colors, their brilliance, and their longevity. We report the first electrochromic device constructed from metal organic frameworks (MOFs). Two MOF films, HKUST-1 and ZnMOF-74, are assembled so that the oxidation of one corresponds to the reduction of the other, allowing the two sides of the device to simultaneously change color. These MOF films exhibit cycling stability unrivaled by other MOFs and a significant optical contrast in a lithium-based electrolyte. HKUST-1 reversibly changed from bright blue to light blue and ZnMOF-74 from yellow to brown. The electrochromic device associates the two MOF films via a PMMA-lithium based electrolyte membrane. The color-switching of these MOFs does not arise from an organic-linker redox reaction, signaling unexplored possibilities for electrochromic MOF-based materials.

Dispersant optimization using design of experiments for SiC/vinyl ester nanocomposites

Science.gov (United States)

Yong, Virginia; Hahn, H. Thomas

2005-04-01

The effect of dispersants on particle dispersion and flexural properties of SiC/vinyl ester nanocomposites was studied by factorial and response surface designs. The results show that the coupling agent 'gamma-methacryloxy propyl trimethoxy silane (MPS)' has no adverse side effect on the flexural properties as illustrated by the good correlation between maximizing the flexural strength and minimizing the agglomerates. However, the dispersant 'BYK-W 966' has a slight adverse side effect on the flexural properties although it improves dispersion at higher dosage. With an optimal dosage of MPS and W966, a small amount of SiC in 0.5 wt% results in 8% increase in strength and 14% increase in modulus. The flushing operation using the dispersant '1-octanol/decane' achieves an excellent SiC dispersion but it does not result in improved flexural properties. This confirmed that a better state of nanoparticle dispersion does not necessarily lead to improved flexural properties. A good dispersion coupling with a strong filler/matrix interfacial bonding is the key to obtain enhanced flexural properties.

Double-walled silicon nanotubes: an ab initio investigation

Science.gov (United States)

Lima, Matheus P.

2018-02-01

The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

Fusion evaporation residues and the distribution of reaction strength in 16O + 40Ca and 28Si + 28Si reactions

International Nuclear Information System (INIS)

Kolata, J.J.; Hinnefeld, J.; Kovar, D.G.

1985-01-01

In measurements performed previously at ANL, studying the two entrance channels 16 O + 40 Ca and 28 Si + 28 Si which form the same compound nucleus 56 Ni, it was found that at higher bombarding energies (E/sub Lab/ > 5-7 MeV/nucleon) the distributions of reaction strength was dramatically different. Although the total reaction cross section behaviors for the two entrance channels are similar, the total evaporation residue (ER) cross sections for 28 Si + 28 Si decrease rapidly with increasing bombarding energies and up to the highest energy studied show no evidence for incomplete fusion processes. For 16 O + 40 Ca the ER cross section remains constant at approximately 1 barn with increasing bombarding energy and shows evidence of increasing contributions from incomplete fusion. To better understand this apparent dependence on the mass asymmetry in the entrance channel, coincidence measurements between evaporation residue-like products and heavy ions on the opposite side of the beam were performed for the two systems at E/sub Lab/ = 8 MeV/nucleon

Double discharges in unipolar-pulsed dielectric barrier discharge xenon excimer lamps

International Nuclear Information System (INIS)

Liu Shuhai; Neiger, Manfred

2003-01-01

Excitation of dielectric barrier discharge xenon excimer lamps by unipolar short square pulses is studied in this paper. Two discharges with different polarity are excited by each voltage pulse (double discharge phenomenon). The primary discharge occurs at the top or at the rising flank of the applied unipolar square pulse, which is directly energized by the external circuit. The secondary discharge with the reversed polarity occurs at the falling flank or shortly after the falling flank end (zero external voltage) depending on the pulse width, which is energized by the energy stored by memory charges deposited by the primary discharge. Fast-speed ICCD imaging shows the primary discharge has a conic discharge appearance with a channel broadening on the anode side. This channel broadening increases with increasing the pulse top level. Only the anode-side surface discharge is observed in the primary discharge. The surface discharge on the cathode side which is present in bipolar sine voltage excitation is not observed. On the contrary, the secondary discharge has only the cathode-side surface discharge. The surface discharge on the anode side is not observed. The secondary discharge is much more diffuse than the primary discharge. Time-resolved emission measurement of double discharges show the secondary discharge emits more VUV xenon excimer radiation but less infrared (IR) xenon atomic emission than the primary discharge. It was found that the IR xenon atomic emission from the secondary discharge can be reduced by shortening the pulse width. The energy efficiency of unipolar-pulsed xenon excimer lamps (the overall energy efficiency of double discharges) is much higher than that obtained under bipolar sine wave excitation. The output VUV spectrum under unipolar pulse excitation is found to be identical to that under sine wave excitation and independent of injected electric power

Characterisation of 10 kV 10 A SiC MOSFET

DEFF Research Database (Denmark)

Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

2015-01-01

The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

Double Colorectal Cancer Only Diagnosed by Computed Tomographic Colonography

Directory of Open Access Journals (Sweden)

Koichi Nagata

2008-02-01

Full Text Available A 58-year-old woman presented to her physician with rectal bleeding and intermittent diarrhea. Optical colonoscopy revealed a bulky tumor which was diagnosed as rectal cancer. She was referred to our institution for further evaluation and treatment. Slim optical colonoscopy showed an obstructive cancer in the rectosigmoid junction and no information of the proximal side of the obstruction. The patient then underwent computed tomographic (CT colonography for further evaluation of the proximal side. Three-dimensional endoluminal ‘fly-through’ images revealed another protruded lesion in the proximal side of the obstruction. Diagnosis of synchronous double cancer was made by CT colonography. This CT data was not only used to create three-dimensional images but also to decide on a preoperative clinical staging. Laparoscopy-assisted high anterior resection was performed and T3 rectal cancer and T1 sigmoid colon cancer were confirmed in the resected specimen. Follow-up optical colonoscopy revealed no other tumors. CT colonography has recently become a popular preoperative examination tool with significant improvement in quality of image due to a rapid progress in computer technology. CT colonography correctly showed synchronous double cancer in our case and provided crucial information for planning surgery. We recommend that CT colonography should be used for evaluating the proximal side of obstructive colorectal cancer.

OBSERVATIONS OF A HYBRID DOUBLE-STREAMER/PSEUDOSTREAMER IN THE SOLAR CORONA

Energy Technology Data Exchange (ETDEWEB)

Rachmeler, L. A.; Seaton, D. B. [Royal Observatory of Belgium, Avenue Circulaire 3, 1180 Brussels (Belgium); Platten, S. J. [School of Mathematics and Statistics, University of St. Andrews, North Haugh, St. Andrews, Fife KY16 9SS (United Kingdom); Bethge, C. [Kiepenheuer-Institut für Sonnenphysik, Schöneckstrasse 6, D-79104 Freiburg (Germany); Yeates, A. R., E-mail: rachmeler@oma.be [Department of Mathematical Sciences, Durham University, Science Laboratories, South Road, Durham DH1 3LE (United Kingdom)

2014-05-20

We report on the first observation of a single hybrid magnetic structure that contains both a pseudostreamer and a double streamer. This structure was originally observed by the SWAP instrument on board the PROBA2 satellite between 2013 May 5 and 10. It consists of a pair of filament channels near the south pole of the Sun. On the western edge of the structure, the magnetic morphology above the filaments is that of a side-by-side double streamer, with open field between the two channels. On the eastern edge, the magnetic morphology is that of a coronal pseudostreamer without the central open field. We investigated this structure with multiple observations and modeling techniques. We describe the topology and dynamic consequences of such a unified structure.

An albumin-mediated cholesterol design-based strategy for tuning siRNA pharmacokinetics and gene silencing.

Science.gov (United States)

Bienk, Konrad; Hvam, Michael Lykke; Pakula, Malgorzata Maria; Dagnæs-Hansen, Frederik; Wengel, Jesper; Malle, Birgitte Mølholm; Kragh-Hansen, Ulrich; Cameron, Jason; Bukrinski, Jens Thostrup; Howard, Kenneth A

2016-06-28

Major challenges for the clinical translation of small interfering RNA (siRNA) include overcoming the poor plasma half-life, site-specific delivery and modulation of gene silencing. In this work, we exploit the intrinsic transport properties of human serum albumin to tune the blood circulatory half-life, hepatic accumulation and gene silencing; based on the number of siRNA cholesteryl modifications. We demonstrate by a gel shift assay a strong and specific affinity of recombinant human serum albumin (rHSA) towards cholesteryl-modified siRNA (Kd>1×10(-7)M) dependent on number of modifications. The rHSA/siRNA complex exhibited reduced nuclease degradation and reduced induction of TNF-α production by human peripheral blood mononuclear cells. The increased solubility of heavily cholesteryl modified siRNA in the presence of rHSA facilitated duplex annealing and consequent interaction that allowed in vivo studies using multiple cholesteryl modifications. A structural-activity-based screen of in vitro EGFP-silencing was used to select optimal siRNA designs containing cholesteryl modifications within the sense strand that were used for in vivo studies. We demonstrate plasma half-life extension in NMRI mice from t1/2 12min (naked) to t1/2 45min (single cholesteryl) and t1/2 71min (double cholesteryl) using fluorescent live bioimaging. The biodistribution showed increased accumulation in the liver for the double cholesteryl modified siRNA that correlated with an increase in hepatic Factor VII gene silencing of 28% (rHSA/siRNA) compared to 4% (naked siRNA) 6days post-injection. This work presents a novel albumin-mediated cholesteryl design-based strategy for tuning pharmacokinetics and systemic gene silencing. Copyright © 2016 Elsevier B.V. All rights reserved.

Investigations on the crystal-structure and non-ambient behaviour of K2Ca2Si8O19 - a new potassium calcium silicate

Science.gov (United States)

Schmidmair, Daniela; Kahlenberg, Volker; Praxmarer, Alessandra; Perfler, Lukas; Mair, Philipp

2017-09-01

Within the context of a systematic re-investigation of phase relationships between compounds of the ternary system K2O-CaO-SiO2 a new potassium calcium silicate with the chemical formula K2Ca2Si8O19 was synthesized via solid state reactions as well as the flux method using KCl as a solvent. Its crystal structure was determined from single-crystal X-ray diffraction data by applying direct methods. The new compound crystallizes in the triclinic space group P 1 bar . Unit cell dimensions are a = 7.4231(7) Å, b = 10.7649(10) Å, c = 12.1252(10) Å, α = 70.193(8)°, β = 83.914(7)° and γ = 88.683(7)°. K2Ca2Si8O19 is built up of corner-connected, slightly distorted [SiO4]-tetrahedra forming double-sheets, which are linked by double-chains of edge-sharing [CaO6]-octahedra. Electroneutrality of the material is provided by additional potassium atoms that are located within the voids of the silicate layers and between adjacent [Ca2O6]-double-chains. Further characterization of the compound was performed by Raman spectroscopy and differential thermal analysis. The behaviour of K2Ca2Si8O19 under high-temperature and high-pressure was investigated by in-situ high-temperature powder X-ray diffraction up to a maximum temperature of 1125 °C and a piston cylinder experiment at 1.5 GPa and 1100 °C. Additionally an overview of known double-layer silicates is given as well as a comparison of K2Ca2Si8O19 to closely related structures.

Preparation of Fe-Pt perpendicular double-layered media with high electric resistivity backlayer

International Nuclear Information System (INIS)

Uchida, Masaru; Suzuki, Toshio; Ouchi, Kazuhiro

2001-01-01

High electric resistivity materials, oxide-added Fe-Si, were investigated as a soft-magnetic backlayer for Fe-Pt perpendicular double-layered media. It was found that there is a possibility of using (Fe-Si)-MgO as a backlayer. To promote a hetero-epitaxial growth of ordered Fe-Pt FCT(0 0 1), the backlayer needed a BCC(2 0 0) crystal orientation, in a situation where surface topology also played an important role

XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)

International Nuclear Information System (INIS)

Zhou, Yan; Pan, Guoshun; Shi, Xiaolei; Xu, Li; Zou, Chunli; Gong, Hua; Luo, Guihai

2014-01-01

Highlights: • CMP removal mechanism of Si-face SiC wafer is investigated through XPS analysis. • UV–vis spectroscopy is used to study CMP removal mechanisms. • CMP removal model of Si-face SiC wafer is proposed. • The variations of atomic step morphology on ultra-smooth surface via AFM is studied. - Abstract: Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been investigated through X-ray photoelectron spectroscopy (XPS), UV–visible (UV–vis) spectroscopy and atomic force microscopy (AFM). XPS results indicate that silicon oxide is formed on Si-face surface polished by the slurry including oxidant H 2 O 2 , but not that after immersing in H 2 O 2 solution. UV–vis spectroscopy curves prove that • OH hydroxyl radical could be generated only under CMP polishing by the slurry including H 2 O 2 and abrasive, so as to promote oxidation of Si-face to realize the effective removal; meanwhile, alkali KOH during CMP could induce the production of more radicals to improve the removal. On the other side, ultra-smooth polished surface with atomic step structure morphology and extremely low Ra of about 0.06 nm (through AFM) is obtained using the developed slurry with silica nanoparticle abrasive. Through investigating the variations of the atomic step morphology on the surface polished by different slurries, it's reveals that CMP removal mechanism involves a simultaneous process of surface chemical reaction and nanoparticle atomic scale abrasion

Optimal Hydrophobicity in Ring-Opening Metathesis Polymerization-Based Protein Mimics Required for siRNA Internalization.

Science.gov (United States)

deRonde, Brittany M; Posey, Nicholas D; Otter, Ronja; Caffrey, Leah M; Minter, Lisa M; Tew, Gregory N

2016-06-13

Exploring the role of polymer structure for the internalization of biologically relevant cargo, specifically siRNA, is of critical importance to the development of improved delivery reagents. Herein, we report guanidinium-rich protein transduction domain mimics (PTDMs) based on a ring-opening metathesis polymerization scaffold containing tunable hydrophobic moieties that promote siRNA internalization. Structure-activity relationships using Jurkat T cells and HeLa cells were explored to determine how the length of the hydrophobic block and the hydrophobic side chain compositions of these PTDMs impacted siRNA internalization. To explore the hydrophobic block length, two different series of diblock copolymers were synthesized: one series with symmetric block lengths and one with asymmetric block lengths. At similar cationic block lengths, asymmetric and symmetric PTDMs promoted siRNA internalization in the same percentages of the cell population regardless of the hydrophobic block length; however, with 20 repeat units of cationic charge, the asymmetric block length had greater siRNA internalization, highlighting the nontrivial relationships between hydrophobicity and overall cationic charge. To further probe how the hydrophobic side chains impacted siRNA internalization, an additional series of asymmetric PTDMs was synthesized that featured a fixed hydrophobic block length of five repeat units that contained either dimethyl (dMe), methyl phenyl (MePh), or diphenyl (dPh) side chains and varied cationic block lengths. This series was further expanded to incorporate hydrophobic blocks consisting of diethyl (dEt), diisobutyl (diBu), and dicyclohexyl (dCy) based repeat units to better define the hydrophobic window for which our PTDMs had optimal activity. High-performance liquid chromatography retention times quantified the relative hydrophobicities of the noncationic building blocks. PTDMs containing the MePh, diBu, and dPh hydrophobic blocks were shown to have superior

Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

Directory of Open Access Journals (Sweden)

Smyntyna V. A.

2011-11-01

Full Text Available Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.

SiC substrate defects and III-N heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2003-05-21

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.

SiC substrate defects and III-N heteroepitaxy

International Nuclear Information System (INIS)

Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

2003-01-01

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established

Iterative Multiview Side Information for Enhanced Reconstruction in Distributed Video Coding

Directory of Open Access Journals (Sweden)

2009-03-01

Full Text Available Distributed video coding (DVC is a new paradigm for video compression based on the information theoretical results of Slepian and Wolf (SW and Wyner and Ziv (WZ. DVC entails low-complexity encoders as well as separate encoding of correlated video sources. This is particularly attractive for multiview camera systems in video surveillance and camera sensor network applications, where low complexity is required at the encoder. In addition, the separate encoding of the sources implies no communication between the cameras in a practical scenario. This is an advantage since communication is time and power consuming and requires complex networking. In this work, different intercamera estimation techniques for side information (SI generation are explored and compared in terms of estimating quality, complexity, and rate distortion (RD performance. Further, a technique called iterative multiview side information (IMSI is introduced, where the final SI is used in an iterative reconstruction process. The simulation results show that IMSI significantly improves the RD performance for video with significant motion and activity. Furthermore, DVC outperforms AVC/H.264 Intra for video with average and low motion but it is still inferior to the Inter No Motion and Inter Motion modes.

Determining the fracture resistance of advanced SiC fiber reinforced SiC matrix composites

International Nuclear Information System (INIS)

Nozawa, T.; Katoh, Y.; Kishimoto, H.

2007-01-01

Full text of publication follows: One of the perceived advantages for highly-crystalline and stoichiometric silicon carbide (SiC) and SiC composites, e.g., advanced SiC fiber reinforced chemically-vapor-infiltrated (CVI) SiC matrix composites, is the retention of fast fracture properties after neutron irradiation at high-temperatures (∼1000 deg. C) to intermediate-doses (∼15 dpa). Accordingly, it has been clarified that the maximum allowable stress (or strain) limit seems unaffected in certain irradiation conditions. Meanwhile, understanding the mechanism of crack propagation from flaws, as potential weakest link to cause composite failure, is somehow lacking, despite that determining the strength criterion based on the fracture mechanics will eventually become important considering the nature of composites' fracture. This study aims to evaluate crack propagation behaviors of advanced SiC/SiC and to provide fundamentals on fracture resistance of the composites to define the strength limit for the practical component design. For those purposes, the effects of irreversible energies related to interfacial de-bonding, fiber bridging, and microcrack forming on the fracture resistance were evaluated. Two-dimensional SiC/SiC composites were fabricated by CVI or nano-infiltration and transient-eutectic-phase (NITE ) methods. Hi-Nicalon TM Type-S or Tyranno TM -SA fibers were used as reinforcements. In-plane mode-I fracture resistance was evaluated by the single edge notched bend technique. The key finding is the continuous Load increase with the crack growth for any types of advanced composites, while many studies specified the gradual load decrease for the conventional composites once the crack initiates. This high quasi-ductility appeared due primarily to high friction (>100 MPa) at the fiber/matrix interface using rough SiC fibers. The preliminary analysis based on the linear elastic fracture mechanics, which does not consider the effects of irreversible energy

Doubly-resonant coherent excitation of HCI planar channeled in a Si crystal

International Nuclear Information System (INIS)

Nakano, Y; Masugi, S; Muranaka, T; Azuma, T; Kondo, C; Hatakeyama, A; Komaki, K; Yamazaki, Y; Takada, E; Murakami, T

2007-01-01

We investigated resonant coherent excitation of H-like Ar 17+ and He-like Ar 16+ ions planar channeled in a Si crystal under the V-type and ladder-type double resonance conditions. In both cases, we observed distinct enhancement in the ionized fraction of the transmitted ions when the double resonance conditions were satisfied. In the ladder-type configuration, the enhancement indicates that the doubly-excited 2p 2 state of He-like Ar 16+ was produced through doubly-resonant coherent excitation

La révolution de l'escompte dans la France du XIXe siècle

OpenAIRE

Plessis, Alain

2002-01-01

Dans la France du xixe siècle, ceux qui voulaient faire des échanges se heurtaient à un double problème : pouvoir régler leurs paiements sur une place éloignée de leur domicile et trouver des crédits abondants à court terme. Les effets de commerce, qui sont à la fois des instruments de règlement et la « matière première » de l’escompte, pouvaient permettre de résoudre cette double difficulté. Depuis le XVIIIe siècle l’escompte des effets de commerce est une pratique connue en France. Mais jus...

Radiographic sensitivity evaluated by IQI DIN in double wall radiography and simple view

International Nuclear Information System (INIS)

Oliveira, C.S. de; Santos Filho, M. dos

1983-01-01

A comparison between the sensitivity of IQI-DIN put at the film side with the sensitivity of the IQI-DIN put at the source side, only for the double wall-simple view technique (DW-SW) is presented. An analysis about the requirements of radiographyic sensitivity in accordance to DIN rule is done. (E.G.) [pt

Dislocation core structures in Si-doped GaN

International Nuclear Information System (INIS)

Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

2015-01-01

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8  and (10 ± 1) × 10 9  cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN

Dislocation core structures in Si-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

2015-12-14

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

DK crush (double-kissing and double-crush) technique for treatment of true coronary bifurcation lesions: illustration and comparison with classic crush.

Science.gov (United States)

Chen, Shaoliang; Zhang, Junjie; Ye, Fei; Zhu, Zhongsheng; Lin, Song; Shan, Shoujie; Kwan, Tak W

2007-04-01

Classic crush has a lower success rate compared to final kissing balloon inflation (FKBI). We previously reported the double-kissing (DK) crush technique that involves double-kissing along with double-crushing for the treatment of true bifurcation coronary lesions in 2005. This is a consecutive, nonrandomized, open-label study. Eighty-eight consecutive patients with single, true coronary bifurcation lesions according to Lefevre Classification2 and side branch diameter >2.0 mm were enrolled. The first 44 patients (from October 2004 to January 2005) were assigned to the classic crush treatment arm and the next 44 patients (from February 2005 to June 2005) were assigned to the DK crush technique arm, respectively. Data within 30 days were analyzed. Patients in the DK crush group, compared to those in classic crush group, were characterized by longer lesion length in the side branch (13.5 +/- 3.4 mm vs 7.8 +/- 3.1 mm; p DK crush group, as well as longer lesion length in the main vessel (24.3 +/- 8.6 mm vs 21.1 +/- 7.3 mm), though without significant differences (p >0.05). Subacute stent thrombosis was detected in 2 patients with failure of FKBI in the classic crush group (4.3%). In addition, patients in the classic crush group were characterized by a smaller minimum lumen diameter (MLD) at the side branch ostium (2.74 +/- 0.12 mm vs 3.01 +/- 0.13 mm; p DK crush has the potential to improve the clinical outcome in patients with coronary bifurcation lesions. Further randomized, prospective, multicenter studies are required to confirm these differences between the classic crush and DK crush techniques.

Plasma response to sustainment with imposed-dynamo current drive in HIT-SI and HIT-SI3

Science.gov (United States)

Hossack, A. C.; Jarboe, T. R.; Chandra, R. N.; Morgan, K. D.; Sutherland, D. A.; Penna, J. M.; Everson, C. J.; Nelson, B. A.

2017-07-01

The helicity injected torus—steady inductive (HIT-SI) program studies efficient, steady-state current drive for magnetic confinement plasmas using a novel experimental method. Stable, high-beta spheromaks have been sustained using steady, inductive current drive. Externally induced loop voltage and magnetic flux are oscillated together so that helicity and power injection are always positive, sustaining the edge plasma current indefinitely. Imposed-dynamo current drive (IDCD) theory further shows that the entire plasma current is sustained. The method is ideal for low aspect ratio, toroidal geometries with closed flux surfaces. Experimental studies of spheromak plasmas sustained with IDCD have shown stable magnetic profiles with evidence of pressure confinement. New measurements show coherent motion of a stable spheromak in response to the imposed perturbations. On the original device two helicity injectors were mounted on either side of the spheromak and the injected mode spectrum was predominantly n  =  1. Coherent, rigid motion indicates that the spheromak is stable and a lack of plasma-generated n  =  1 energy indicates that the maximum q is maintained below 1 during sustainment. Results from the HIT-SI3 device are also presented. Three inductive helicity injectors are mounted on one side of the spheromak flux conserver. Varying the relative injector phasing changes the injected mode spectrum which includes n  =  2, 3, and higher modes.

Imaging with SiPMs in noble-gas detectors

International Nuclear Information System (INIS)

Yahlali, N; González, K; Fernandes, L M P; Garcia, A N C; Soriano, A

2013-01-01

Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free ββ0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250–500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250–350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250–315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.

Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

International Nuclear Information System (INIS)

Chen, Guohai; Shin, Dong Hoon; Lee, Cheol Jin; Iwasaki, Takayuki; Kawarada, Hiroshi

2008-01-01

Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO 2 /n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2 /n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm -1 at the emission current density of 0.1 μA cm -2 and a threshold field of 1.67 V μm -1 at the emission current density of 1.0 mA cm -2 . The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate

Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

International Nuclear Information System (INIS)

Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van; Isabella, Olindo; Zeman, Miro

2016-01-01

Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R sh n-type  = 95 Ω/□ and R sh p-type  = 120 Ω/□). An efficiency of 19.2% (V oc  = 673 mV, J sc  = 38.0 mA/cm 2 , FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V OC of 696 mV was also measured

Boron diffusion in Ge+ premorphized and BF2 implanted Si(001)

International Nuclear Information System (INIS)

Zou, L.F.; Acosta-Ortiz, S.E.; Zou, L.X.; Regalado, L.E.; Sun, D.Z.; Wang, Z.G.

1998-01-01

The annealing behavior of Si implanted with Ge and then BF 2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 Centigrade for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 Centigrade for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 Centigrade, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 Centigrade for 60 minutes display two Si Ge peaks, which may be related to the B concentration profiles. (Author)

Study on characteristics of U-Mo/Al-Si interaction layers of dispersion fuel plates

International Nuclear Information System (INIS)

Liu Lijian; Yin Changgeng; Chen Jiangang; Sun Changlong; Liu Yunming

2014-01-01

In this paper, we analyzed the characteristics of U-Mo/Al-Si interaction layers of dispersion fuel plates. The results show that the interaction layers (IL) are with irregular morphology and uneven thickness, and are mainly formed in the internal micro cracks of the dispersion fuel particles or at the interface between the particles and the substrates. The diffusion mechanism of U-Mo/Al-Si is the vacancy diffusion, Al and Si are migrating elements, and the diffusion reaction is that Al and Si diffuse to U-Mo alloy. Inside the interaction layers, the Al content keeps constant basically, but the Si content gradually increases with the substrate-fuel direction, and the maximum content of Si appears interaction layers near the U-Mo side. Adding about 5 wt% Si into Al matrix can restrain the diffusion reaction, and improve the performance of dispersion fuel plates finally. (authors)

Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

Science.gov (United States)

Elogail, Y.; Kasper, E.; Gunzer, F.; Shaker, A.; Schulze, J.

2016-06-01

This work is concerned with the investigation of Capacitance-Voltage (CV) behavior of n-channel Si/SiGe MODFET varactors. This investigation provides a valuable insight into the high frequency response of the device under test and its dependence on design parameters; especially regarding the modulation layer doping concentration. The heterostructure under consideration is much more complicated than conventional MOS varactor with respect to non-uniform doping, energy band offsets and the pn-junction in series. Subsequently, CV characterization has never been applied to such MODFET varactor structure. Experimental CV measurements have shown a non-monotonic behavior with a transition point minimum and higher saturation levels on both sides, in contradiction to the conventional high frequency MOS characteristics. This behavior was confirmed qualitatively using simulations. Moreover, we explain some fundamental capacitance properties of the structure, which provide already very interesting perceptions of the MODFET varactor operation, modeling and possible applications using the obtained stimulating results.

Switching Investigations on a SiC MOSFET in a TO-247 Package

DEFF Research Database (Denmark)

Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

2014-01-01

This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

Retroperitoneal Sarcoma Involving Unilateral Double Ureter: Management, Treatment and Psychological Implications

Directory of Open Access Journals (Sweden)

Vito Leanza

2014-05-01

Full Text Available The case of a 45-year-old woman who was admitted to our university hospital for polymenorrhea, weight gain and pain in the left iliac region is reported. An abdominal ultrasound revealed a 9.5 × 5.2-cm, hypoechoic and inhomogeneous mass located on the left side of the pelvis and behind the ovary. The patient underwent surgery. The pelvic mass was firmly anchored to the small intestine, colon, sigma and uterine fundus. After removing the adhesions, double ureters, which had been incorporated in the mass, were observed on the left side. Resection of the unilateral double ureters was necessary in order to remove the entire mass, and thereafter, a left salpingoophorectomy was performed. A histological examination showed a malignant retroperitoneal mass. Termino-terminal ureteral anastomosis with two double-J stents was carried out. Total hysterectomy with preservation of the right adenexum and regional lymphadenectomy was performed. The purpose of this case report is to discuss the physical and psychological implications related to the combination of two rare entities: leiomyosarcoma and a double ureter located within the mass. A literature review on the clinical management and psychological aspects from a female cancer patient's perspective undergoing surgery with the aforementioned disorders will be discussed.

Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package

International Nuclear Information System (INIS)

Ikeda, Akihiro; Sakamoto, Atsushi; Hattori, Reiji; Kuroki, Yukinori

2009-01-01

Electroless Ni-B was plated on SiO 2 as a barrier layer against Cu diffusion for through-Si via (TSV) interconnections in a 3-dimensional multi-chip package. The electroless Ni-B was deposited on the entire area of the SiO 2 side wall of a deep via with vapor phase pre-deposition of 3-aminopropyl-triethoxysilane on the SiO 2 . The carrier lifetimes in the Si substrates plated with Ni-B/Cu did not decrease with an increase in annealing temperature up to 400 deg. C . The absence of degradation of carrier lifetimes indicates that Cu atoms did not diffuse into the Si through the Ni-B. The advantages of electroless Ni-B (good conformal deposition and forming an effective diffusion barrier against Cu) make it useful as a barrier layer for TSV interconnections in a 3-dimensional multi-chip package

Function and anatomy of plant siRNA pools derived from hairpin transgenes

Directory of Open Access Journals (Sweden)

Lee Kevin AW

2007-11-01

Full Text Available Abstract Background RNA interference results in specific gene silencing by small-interfering RNAs (siRNAs. Synthetic siRNAs provide a powerful tool for manipulating gene expression but high cost suggests that novel siRNA production methods are desirable. Strong evolutionary conservation of siRNA structure suggested that siRNAs will retain cross-species function and that transgenic plants expressing heterologous siRNAs might serve as useful siRNA bioreactors. Here we report a detailed evaluation of the above proposition and present evidence regarding structural features of siRNAs extracted from plants. Results Testing the gene silencing capacity of plant-derived siRNAs in mammalian cells proved to be very challenging and required partial siRNA purification and design of a highly sensitive assay. Using the above assay we found that plant-derived siRNAs are ineffective for gene silencing in mammalian cells. Plant-derived siRNAs are almost exclusively double-stranded and most likely comprise a mixture of bona fide siRNAs and aberrant partially complementary duplexes. We also provide indirect evidence that plant-derived siRNAs may contain a hitherto undetected physiological modification, distinct from 3' terminal 2-O-methylation. Conclusion siRNAs produced from plant hairpin transgenes and extracted from plants are ineffective for gene silencing in mammalian cells. Thus our findings establish that a previous claim that transgenic plants offer a cost-effective, scalable and sustainable source of siRNAs is unwarranted. Our results also indicate that the presence of aberrant siRNA duplexes and possibly a plant-specific siRNA modification, compromises the gene silencing capacity of plant-derived siRNAs in mammalian cells.

The Social Side Effects of Acetaminophen

Science.gov (United States)

Mischkowski, Dominik

About 23% of all adults in the US take acetaminophen during an average week (Kaufman, Kelly, Rosenberg, Anderson, & Mitchell, 2002) because acetaminophen is an effective physical painkiller and easily accessible over the counter. The physiological side effects of acetaminophen are well documented and generally mild when acetaminophen is consumed in the appropriate dosage. In contrast, the psychological and social side effects of acetaminophen are largely unknown. Recent functional neuroimaging research suggests that the experience of physical pain is fundamentally related to the experience of empathy for the pain of other people, indicating that pharmacologically reducing responsiveness to physical pain also reduces cognitive, affective, and behavioral responsiveness to the pain of others. I tested this hypothesis across three double-blind between-subjects drug intervention studies. Two experiments showed that acetaminophen had moderate effects on empathic affect, specifically personal distress and empathic concern, and a small effect on empathic cognition, specifically perceived pain, when facing physical and social pain of others. The same two experiments and a third experiment also showed that acetaminophen can increase the willingness to inflict pain on other people, i.e., actual aggressive behavior. This effect was especially pronounced among people low in dispositional empathic concern. Together, these findings suggest that the physical pain system is more involved in the regulation of social cognition, affect, and behavior than previously assumed and that the experience of physical pain and responsiveness to the pain of others share a common neurochemical basis. Furthermore, these findings suggest that acetaminophen has unappreciated but serious social side effects, and that these side effects may depend on psychological characteristics of the drug consumer. This idea is consistent with recent theory and research on the context-dependency of neurochemical

A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

2017-06-01

In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

Circularly-polarized, semitransparent and double-sided holograms based on helical photonic structures.

Science.gov (United States)

Kobashi, Junji; Yoshida, Hiroyuki; Ozaki, Masanori

2017-11-28

Recent advances in nanofabrication techniques are opening new frontiers in holographic devices, with the capability to integrate various optical functions in a single device. However, while most efficient holograms are achieved in reflection-mode configurations, they are in general opaque because of the reflective substrate that must be used, and therefore, have limited applicability. Here, we present a semi-transparent, reflective computer-generated hologram that is circularly-polarization dependent, and reconstructs different wavefronts when viewed from different sides. The integrated functionality is realized using a single thin-film of liquid crystal with a self-organized helical structure that Bragg reflects circularly-polarized light over a certain band of wavelengths. Asymmetry depending on the viewing side is achieved by exploiting the limited penetration depth of light in the helical structure as well as the nature of liquid crystals to conform to different orientational patterns imprinted on the two substrates sandwiching the material. Also, because the operation wavelength is determined by the reflection band position, pseudo-color holograms can be made by simply stacking layers with different designs. The unique characteristics of this hologram may find applications in polarization-encoded security holograms and see-through holographic signage where different information need to be displayed depending on the viewing direction.

Syntheses and characterization of novel P/Si polysilsesquioxanes/epoxy nanocomposites

International Nuclear Information System (INIS)

Chiu Yiechan; Liu Fangyi; Ma, C.-C.M.; Chou, I.-C.; Riang Linawati; Chiang, C.-L.; Yang, J.-C.

2008-01-01

Phosphorus-containing polysilsesquioxane (PSSQ) was introduced into diglycidyl ether of bisphenol A epoxy (DGEBA) to generate a novel P/Si PSSQ nanocomposite. A series of nanocomposites was fabricated by changing the content of the 2-(diphenylphosphino)ethyltriethoxysilane (DPPETES) monomer or P/Si PSSQ cured with DGEBA epoxy and modified epoxy. The structure, thermal properties and flame-retardancy of the P/Si PSSQ nanocomposites were characterized by FT-IR, solid-state 29 Si NMR, thermogravimetric analysis (TGA) and limited oxygen index (LOI) instruments. The nano-sizes of the particles in P/Si PSSQ were approximately 30-50 nm, and the polarity of nanocomposites might generate the nanophase-separated structure from transmission electron microscopy (TEM). The urethane-like side group of the modified epoxy and the fabrication of oligomers in the curing reaction affected the T d5 values of nanocomposites. TGA and LOI results indicated that the char yield (29 wt%) increased and the nanocomposites were not very flammable (LOI = 30). The hybrid materials also exhibited high thermal stability, good flame-retardance and a lack of phase separation

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Science.gov (United States)

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

2018-01-01

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

Limb darkening in Venus night-side disk as viewed from Akatsuki IR2

Science.gov (United States)

Satoh, Takehiko; Nakakushi, Takashi; Sato, Takao M.; Hashimoto, George L.

2017-10-01

Night-side hemisphere of Venus exhibits dark and bright regions as a result of spatially inhomogeneous cloud opacity which is illuminated by infrared radiation from deeper atmosphere. The 2-μm camera (IR2) onboard Akatsuki, Japan's Venus Climate Orbiter, is equipped with three narrow-band filters (1.735, 2.26, and 2.32 μm) to image Venus night-side disk in well-known transparency windows of CO2 atmosphere (Allen and Crawford 1984). In general, a cloud feature appears brightest when it is in the disk center and becomes darker as the zenith angle of emergent light increases. Such limb darkening was observed with Galileo/NIMS and mathematically approximated (Carlson et al., 1993). Limb-darkening correction helps to identify branches, in a 1.74-μm vs. 2.3-μm radiances scatter plot, each of which corresponds to a group of aerosols with similar properties. We analyzed Akatsuki/IR2 images to characterize the limb darkening for three night-side filters.There is, however, contamination from the intense day-side disk blurred by IR2's point spread function (PSF). It is found that infrared light can be multiplly reflected within the Si substrate of IR2 detector (1024x1024 pixels PtSi array), causing elongated tail in the actual PSF. We treated this in two different ways. One is to mathematically approximate the PSF (with a combination of modified Lorentz functions) and another is to differentiate 2.26-μm image from 2.32-μm image so that the blurred light pattern can directly be obtained. By comparing results from these two methods, we are able to reasonablly clean up the night-side images and limb darkening is extracted. Physical interpretation of limb darkening, as well as "true" time variations of cloud brightness will be presented/discussed.

A silica-supported double-decker silsesquioxane provides a second skin for the selective generation of bipodal surface organometallic complexes

KAUST Repository

Espinas, Jeff

2012-11-12

A well-defined silica-based material with a homogeneous nanolayer presenting identical pairs of vicinal silanols has been prepared by reaction of the surface organometallic species [≡SiOZr(CH 2CMe 3) 3], obtained on a silica dehydroxylated at 900 °C, with the double-decker-shaped silsesquioxane (OH) 2DD(OH) 2. The surface structure has been established using extensive NMR characterization ( 1H, 13C, 29Si, HETCOR, double-quantum, triple-quantum). Treatment with Zr(CH 2CMe 3) 4 leads to the first well-defined single-site bipodal grafted bis-neopentyl zirconium complex. © 2012 American Chemical Society.

A silica-supported double-decker silsesquioxane provides a second skin for the selective generation of bipodal surface organometallic complexes

KAUST Repository

Espinas, Jeff; Pelletier, Jeremie; Abou-Hamad, Edy; Emsley, Lyndon; Basset, Jean-Marie

2012-01-01

A well-defined silica-based material with a homogeneous nanolayer presenting identical pairs of vicinal silanols has been prepared by reaction of the surface organometallic species [≡SiOZr(CH 2CMe 3) 3], obtained on a silica dehydroxylated at 900 °C, with the double-decker-shaped silsesquioxane (OH) 2DD(OH) 2. The surface structure has been established using extensive NMR characterization ( 1H, 13C, 29Si, HETCOR, double-quantum, triple-quantum). Treatment with Zr(CH 2CMe 3) 4 leads to the first well-defined single-site bipodal grafted bis-neopentyl zirconium complex. © 2012 American Chemical Society.

Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

DEFF Research Database (Denmark)

Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

1986-01-01

X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

Pitting corrosion behaviour study of aluminium matrix composites (A3xx.x/SiCp)

International Nuclear Information System (INIS)

Pardo, A.; Merino, M. C.; Merino, S.; Lopez, M. D.; Viejo, F.; Carboneras, M.; Arrabal, R.

2004-01-01

The influence of the SiCp proportion on the pitting corrosion of A3xx.x/SiC/xxp composites was studies by means of potenciodinamic polarization and double cyclic polarization in saline environment at 25 degree centigrade A360/SiC/xxp matrix does not contain copper, whereas the A380/SiC/xxp matric contains 1,39-1,44 wt %Cu. The kinetic study was carried out by gravimetric measurements. The nature of corrosion products was analysed by low angle XRD and Scanning Electron Microscopy (SEM). The corrosion is due to nucleation and growth of Al 2 O 3 -3H 2 O on the material surface. The corrosion increases with the reinforcement proportion, chloride concentration and copper content. (Author) 10 refs

Double-differential cross section for ionization of H2O molecules by 4-MeV/u C6 + and Si13 + ions

Science.gov (United States)

Bhattacharjee, Shamik; Biswas, S.; Monti, J. M.; Rivarola, R. D.; Tribedi, L. C.

2017-11-01

Double-differential cross section (DDCS) for electrons ejected in collisions of fast C6 + and Si13 + projectiles, with a H2O vapor target, were measured. The electrons were detected over an energy range of 1-600 eV and an angular range of 20∘-160∘. The obtained DDCS spectra, for both the ions, were compared with the CDW-EIS model. Occasional reference has been made to the DDCS data for the case of 3.75-MeV/u O8 + colliding on the same molecule for an overall comparison. A reasonable agreement with theoretical results was seen for the case of C6 + and O8 + projectiles. However, between C6 + and O8 + projectiles, the deviation from theory is larger for the case of the carbon projectile. Substantial deviation starts to show up for the case of the Si13 + projectile. By numerical integration of the DDCS data, the single-differential cross section (SDCS) and total cross section (TCS) were obtained and compared with theoretical models. The present TCS data along with the other available data for p , He , and C ions were plotted together. A clear and gradual deviation from the Bethe-Born predicted q2 scaling was observed, where q is the projectile charge state. From all the data we find TCS varies as qn where n = 1.7 ± 0.1. The provided data set will be valuable in order to help model the radiation damage in hadron therapy, particularly in the Bragg peak region.

Thermo-sensitive nanoparticles for triggered release of siRNA.

Science.gov (United States)

Yang, Zheng; Cheng, Qiang; Jiang, Qian; Deng, Liandong; Liang, Zicai; Dong, Anjie

2015-01-01

Efficient delivery of small interfering RNA (siRNA) is crucially required for cancer gene therapy. Herein, a thermo-sensitive copolymer with a simple structure, poly (ethylene glycol) methyl ether acrylate-b-poly (N-isopropylacrylamide) (mPEG-b-PNIPAM) was developed. A novel kind of thermo-sensitive nanoparticles (DENPs) was constructed for the cold-shock triggered release of siRNA by double emulsion-solvent evaporation method using mPEG-b-PNIPAM and a cationic lipid, 3β [N-(N', N'-dimethylaminoethane)-carbamoyl] cholesterol [DC-Chol]. DENPs were observed by transmission electron microscopy and dynamical light scattering before and after 'cold shock' treatment. The encapsulation efficiency (EE) of siRNA in DENPs, which was measured by fluorescence spectrophotometer was 96.8% while it was significantly reduced to be 23.2% when DC-Chol was absent. DENPs/siRNA NPs exhibited a thermo-sensitive siRNA release character that the cumulatively released amount of siRNA from cold shock was approximately 2.2 folds higher after 7 days. In vitro luciferase silencing experiments indicated that DENPs showed potent gene silencing efficacy in HeLa-Luc cells (HeLa cells steadily expressed luciferase), which was further enhanced by a cold shock. Furthermore, MTT assay showed that cell viability with DENPs/siRNA up to 200 nM remained above 80%. We also observed that most of siRNA was accumulated in kidney mediated by DENPs instead of liver and spleen in vivo experiments. Thus, DENPs as a cold shock responsive quick release model for siRNA or hydrophilic macromolecules delivery provide a new way to nanocarrier design and clinic therapy.

Several loadings and stresses of first wall of SiC with metal liner on conceptual design of moving ring reactor 'KARIN-1'

International Nuclear Information System (INIS)

Nishikawa, Masahiro; Tachibana, Eizaburo; Watanabe, Kenji; Fujiie, Yoichi.

1983-01-01

On conceptual design of moving ring reactor ''KARIN-I'' (Output: 1850 MWe), the first wall of SiC with metal liner is considered by reason that SiC ceramics has specific features of excellent radiation damage resistance in fast neutron spectra and a very low residual radioactivity, and that the thin metal liner has good compatibility with liquid lithium and good vaccum-tight, however, a extent electromagnetic interaction. The electromagnetic force applied on the metal liner and several pressure losses of liquid lithum flow are estimated, and these forces correspond to the fluid mechanical loading on SiC first wall. Thermal loading by neutron flux is calculated on the first wall to obtain temperature distributions along the flow direction and toward the wall thickness. At the outlet of the burning section, the surface temperature of SiC rises to the value of 825 0 C on plasma side and on the metal liner, it rises to the value of 540 0 C. Finally, the stress analysis is performed. The thermal stress is about one order larger than the stress induced by the fluid mechanical loading. At the inlet of the burning section, the average tensile stress of 22.4kg/mm 2 is induced on the outer side of SiC wall, and on the inner side, the average compressive stress of -26.1kg/mm 2 is induced. At the outlet of the burning section, the tensile stress is found to oscillate between 25.5kg/mm 2 and 27.3kg/mm 2 on the outer side of SiC wall by frequency of 1 Hz, and on the inner side, the compressive stress also oscillates between -21.6kg/mm 2 and -29.0kg/mm 2 by the same frequency. These stresses are within the value of fracture stress, (72.5kg/mm 2 ). Difficult residual problems on the first wall are also discussed. (author)

Double-sided coaxial circuit QED with out-of-plane wiring

Science.gov (United States)

Rahamim, J.; Behrle, T.; Peterer, M. J.; Patterson, A.; Spring, P. A.; Tsunoda, T.; Manenti, R.; Tancredi, G.; Leek, P. J.

2017-05-01

Superconducting circuits are well established as a strong candidate platform for the development of quantum computing. In order to advance to a practically useful level, architectures are needed which combine arrays of many qubits with selective qubit control and readout, without compromising on coherence. Here, we present a coaxial circuit quantum electrodynamics architecture in which qubit and resonator are fabricated on opposing sides of a single chip, and control and readout wiring are provided by coaxial wiring running perpendicular to the chip plane. We present characterization measurements of a fabricated device in good agreement with simulated parameters and demonstrating energy relaxation and dephasing times of T1 = 4.1 μs and T2 = 5.7 μs, respectively. The architecture allows for scaling to large arrays of selectively controlled and measured qubits with the advantage of all wiring being out of the plane.

Optical anomaly in artificial cubic hieratite, K2[SiF6

NARCIS (Netherlands)

Göbel, Ole; ten Elshof, Johan E.; Kaminsky, W.; Hannss, M.

2015-01-01

Crystals of K2[SiF6] were grown in agar gel, silica gel and jelly. Crystals grown in agar gel or jelly exhibit birefringence and consist of six double refracting growth sectors, each having the shape of a tetragonal pyramid. Nevertheless, the structure of the crystals from agar gel could be refined

Characteristics of hard X-ray double sources in impulsive solar flares

Science.gov (United States)

Sakao, T.; Kosugi, T.; Masuda, S.; Yaji, K.; Inda-Koide, M.; Makishima, K.

1996-01-01

Imaging observations of solar flare hard X-ray sources with the Hard X-ray Telescope (HXT) aboard the Yohkoh satellite have revealed that hard X-ray emissions (greater than 30 ke V) originate most frequently from double sources. The double sources are located on both sides of the magnetic neutral line, suggesting that the bulk of hard X-rays is emitted from footpoints of flaring magnetic loops. We also found that hard X-rays from the double sources are emitted simultaneously within a fraction of second and that the weaker source tends to be located in the stronger magnetic field region, showing a softer spectrum. Physcial implications on the observed characteristics of the hard X-ray double sources are discussed.

Double anisotropic electrically conductive flexible Janus-typed membranes.

Science.gov (United States)

Li, Xiaobing; Ma, Qianli; Tian, Jiao; Xi, Xue; Li, Dan; Dong, Xiangting; Yu, Wensheng; Wang, Xinlu; Wang, Jinxian; Liu, Guixia

2017-12-07

Novel type III anisotropic conductive films (ACFs), namely flexible Janus-typed membranes, were proposed, designed and fabricated for the first time. Flexible Janus-typed membranes composed of ordered Janus nanobelts were constructed by electrospinning, which simultaneously possess fluorescence and double electrically conductive anisotropy. For the fabrication of the Janus-typed membrane, Janus nanobelts comprising a conductive side and an insulative-fluorescent side were primarily fabricated, and then the Janus nanobelts are arranged into parallel arrays using an aluminum rotary drum as the collector to obtain a single anisotropically conductive film. Subsequently, a secondary electrospinning process was applied to the as-prepared single anisotropically conductive films to acquire the final Janus-typed membrane. For this Janus-typed membrane, namely its left-to-right structure, anisotropic electrical conduction synchronously exists on both sides, and furthermore, the two electrically conductive directions are perpendicular. By modulating the amount of Eu(BA) 3 phen complex and conducting polyaniline (PANI), the characteristics and intensity of the fluorescence-electricity dual-function in the membrane can be tuned. The high integration of this peculiar Janus-typed membrane with simultaneous double electrically conductive anisotropy-fluorescent dual-functionality is successfully realized in this study. This design philosophy and preparative technique will provide support for the design and construction of new types of special nanostructures with multi-functionality.

ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION USING THE DOUBLE-BUNDLE TECHNIQUE - EVALUATION IN THE BIOMECHANICS LABORATORY.

Science.gov (United States)

D'Elia, Caio Oliveira; Bitar, Alexandre Carneiro; Castropil, Wagner; Garofo, Antônio Guilherme Padovani; Cantuária, Anita Lopes; Orselli, Maria Isabel Veras; Luques, Isabela Ugo; Duarte, Marcos

2011-01-01

The objective of this study was to describe the methodology of knee rotation analysis using biomechanics laboratory instruments and to present the preliminary results from a comparative study on patients who underwent anterior cruciate ligament (ACL) reconstruction using the double-bundle technique. The protocol currently used in our laboratory was described. Three-dimensional kinematic analysis was performed and knee rotation amplitude was measured on eight normal patients (control group) and 12 patients who were operated using the double-bundle technique, by means of three tasks in the biomechanics laboratory. No significant differences between operated and non-operated sides were shown in relation to the mean amplitudes of gait, gait with change in direction or gait with change in direction when going down stairs (p > 0.13). The preliminary results did not show any difference in the double-bundle ACL reconstruction technique in relation to the contralateral side and the control group.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Energy Technology Data Exchange (ETDEWEB)

Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

International Nuclear Information System (INIS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-01-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Development and operation of a novel PC-based high speed beam telescope for particle tracking using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Treis, J.

2002-08-01

A PC based high speed silicon microstrip beam telescope consisting of several independent modules is presented. Every module contains an AC-coupled double sided silicon microstrip sensor and a complete set of analog and digital signal processing electronics. A digital bus connects the modules with the DAQ PC. A trigger logic unit coordinates the operation of all modules of the telescope. The system architecture allows easy integration of any kind of device under test into the data acquisition chain. Signal digitization, pedestal correction, hit detection and zero suppression are done by hardware inside the modules, so that the amount of data per event is reduced by a factor of 80 compared to conventional readout systems. In combination with a two level data acquisition scheme, this allows event rates up to 7.6 kHz. This is a factor of 40 faster than conventional VME based beam telescopes while comparable analog performance is maintained achieving signal to noise ratios of up to 70:1. The telescope has been tested in the SPS testbeam at CERN. It has been adopted as the reference instrument for testbeam studies for the ATLAS pixel detector development. (orig.)

Tunable Resonant-Cavity-Enhanced Photodetector with Double High-Index-Contrast Grating Mirrors

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Yvind, Kresten; Chung, Il-Sug

2013-01-01

In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists....... Furthermore, the fact that it can be fabricated on a silicon platform offers us a possibility of integration with electronics.......In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists...... of a top InP HCG mirror, a p-i-n photodiode embedding multiple quantum wells, and a Si HCG mirror formed in the Si layer of a silicon-on-insulator wafer. The detection wavelength can be changed by moving the top InP HCG mirror suspended in the air. High reflectivity and small penetration length of HCGs...

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC

Science.gov (United States)

Igumbor, E.; Olaniyan, O.; Mapasha, R. E.; Danga, H. T.; Omotoso, E.; Meyer, W. E.

2018-05-01

Electrically active induced energy levels in semiconductor devices could be beneficial to the discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is a high energy process that produced high defect concentrations which could be removed during dopant activation annealing. On the other hand, boron (B) substituted for silicon in SiC causes a reduction in the number of defects. This scenario leads to a decrease in the dielectric properties and induced deep donor and shallow acceptor levels. Complexes formed by the N, such as the nitrogen-vacancy centre, have been reported to play a significant role in the application of quantum bits. In this paper, results of charge states thermodynamic transition level of the N and B vacancy-complexes in 4H–SiC are presented. We explore complexes where substitutional N/N or B/B sits near a Si (V) or C (V) vacancy to form vacancy-complexes (NV, NV, NV, NV, BV, BV, BV and BV). The energies of formation of the N related vacancy-complexes showed the NV to be energetically stable close to the valence band maximum in its double positive charge state. The NV is more energetically stable in the double negative charge state close to the conduction band minimum. The NV on the other hand, induced double donor level and the NV induced a double acceptor level. For B related complexes, the BV and BV were energetically stable in their single positive charge state close to the valence band maximum. As the Fermi energy is varied across the band gap, the neutral and single negative charge states of the BV become more stable at different energy levels. B and N related complexes exhibited charge state controlled metastability behaviour.

Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

International Nuclear Information System (INIS)

Leung, To Chi.

1991-01-01

A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

Preliminary study in development of glass-ceramic based on SiO{sub 2}-LiO{sub 2} system, starting of different SiO{sub 2} starting powders; Um estudo preliminar do desenvolvimento de materiais vitroceramicos do sistema SiO{sub 2}-LiO{sub 2} obtidos a partir de diferentes fontes de silica

Energy Technology Data Exchange (ETDEWEB)

Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D. [Universidade de Sao Paulo (EEL/USP), Lorena, SP (Brazil). Escola de Engenharia de Lorena. Dept. de Materiais; Melo, F.C.L. [Centro Tecnico Aeroespacial (AMR/CTA/IAE), Sao Jose dos Campos, SP (Brazil). Instituto de Aeronautica e Espaco. Div. de Materiais

2009-07-01

In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO{sub 2} and Li{sub 2}CO{sub 3} powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO{sub 2} powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li{sub 2}SiO{sub 3} and residual SiO{sub 2} as crystalline phases. On the other side, commercial SiO{sub 2}- Samples presented only Li{sub 2}Si{sub 2}O{sub 5} as crystalline phases and the better results of hardness and fracture toughness. (author)

Evaluation of field emission properties from multiple-stacked Si quantum dots

International Nuclear Information System (INIS)

Takeuchi, Daichi; Makihara, Katsunori; Ohta, Akio; Ikeda, Mitsuhisa; Miyazaki, Seiichi

2016-01-01

Multiple-stacked Si quantum dots (QDs) with ultrathin SiO 2 interlayers were formed on ultrathin SiO 2 layers by repeating a process sequence consisting of the formation of Si-QDs by low pressure chemical vapor deposition using a SiH 4 gas and the surface oxidation and subsequent surface modification by remote hydrogen and oxygen plasmas, respectively. To clarify the electron emission mechanism from multiple-stacked Si-QDs covered with an ultrathin Au top electrode, the energy distribution of the emitted electrons and its electric field dependence was measured using a hemispherical electron energy analyzer in an X-ray photoelectron spectroscopy system under DC bias application to the multiple-stacked Si-QD structure. At − 6 V and over, the energy distributions reached a peak at ~ 2.5 eV with a tail toward the higher energy side. While the electron emission intensity was increased exponentially with an increase in the applied DC bias, there was no significant increase in the emission peak energy. The observed emission characteristics can be interpreted in terms of field emissions from the second and/or third topmost Si-QDs resulting from the electric concentration there. - Highlights: • Electron field emission from 6-fold stack of Si-QDs has been evaluated. • AFM measurements show the local electron emission from individual Si-QDs. • Impact of applied bias on the electron emission energy distribution was investigated.

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

A case of complete double aortic arch visualized by transthoracic echocardiography.

Science.gov (United States)

Saito, Naka; Kato, Shingo; Saito, Noritaka; Nakachi, Tatsuya; Fukui, Kazuki; Iwasawa, Tae; Kosuge, Masami; Kimura, Kazuo

2017-08-01

A case of double aortic arch that was well visualized using transthoracic echocardiography is reported. A 38-year-old man underwent transthoracic echocardiography for the evaluation of dyspnea. A suprasternal view of transthoracic echocardiography showed the ascending aorta bifurcate to left and right aortic arches, with blood flow from the ascending aorta to bilateral aortic arches. The diagnosis of right side-dominant double aortic arch was made, and the patient's symptom was conceivably related to compression of the trachea due to a vascular ring. This report indicates the potential usefulness of transthoracic echocardiography for noninvasive detection of double aortic arch in adults. © 2017, Wiley Periodicals, Inc.

Pitting corrosion behaviour study of aluminium matrix composites (A3xx.x/SiCp); Estudio del comportamiento a la corrosion por picadura de materiales compuestos de matriz de aluminio (A3xx.x/SiCp)

Energy Technology Data Exchange (ETDEWEB)

Pardo, A.; Merino, M. C.; Merino, S.; Lopez, M. D.; Viejo, F.; Carboneras, M.; Arrabal, R.

2004-07-01

The influence of the SiCp proportion on the pitting corrosion of A3xx.x/SiC/xxp composites was studies by means of potenciodinamic polarization and double cyclic polarization in saline environment at 25 degree centigree A360/SiC/xxp matrix does not contain copper, whereas the A380/SiC/xxp matric contains 1,39-1,44 wt %Cu. The kinetic study was carried out by gravimetric measurements. The nature of corrosion products was analysed by low angle XRD and Scanning Electron Microscopy (SEM). The corrosion is due to nucleation and growth of Al{sub 2}O{sub 3}-3H{sub 2}O on the material surface. The corrosion increases with the reinforcement proportion, chloride concentration and copper content. (Author) 10 refs.

SiNTO EWT silicon solar cells

OpenAIRE

Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

2010-01-01

In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e...

Math Model and Calculation Analysis of Inter-harmonic of Double PWM Speed Control System in Distribution Network

Directory of Open Access Journals (Sweden)

Yang Wen-Huan

2014-11-01

Full Text Available Aiming at the problem that the distribution network voltage will fluctuate because of the inter-harmonic currents injected into the network by double PWM speed control system when regulating the speed of the asynchronous motor, we established the inter-harmonic current math model of double PWM speed control system according to switching function based on a real bridge crane. The distribution law of the inter-harmonic is got by calculating the grid-side currents and their spectrum while letting the motor run at different quadrants and frequencies. The result which is verified by simulation and experiment shows that the content of the inter harmonic currents is more than that of harmonic currents in double PWM speed control system, the frequency of the inter harmonics of the grid-side current mainly focus on the scope lower than the fundamental frequency, and when the motor runs at low frequencies, the THD of the grid-side current is high. The result has verified the reason why the voltage of a bridge crane distribution system of a deepwater port in Shanghai flickers.

Two against one - a case for single-sided films

International Nuclear Information System (INIS)

Dixon, L.

1979-01-01

The disadvantages of double-sided X-ray film include parallax between the double images where the film is angled to the central ray, and a cross-over effect where light from the front screen affects the back emulsion and vice versa. An investigation of the percentage of the total film density due to cross-over showed the effect varied from 28% to 47%, increasing with total density and faster screens. Kilovoltage had little influence on the effect. A single emulsion film with one screen gave an appreciable increase in radiographic sharpness and definition but required an increase by about 2.5 times in the exposure required. A very fast screen overcame this effect without comparable loss of detail. The use of single emulsion films should also reduce the thickness of cut and therefore improve sharpness in tomography. (UK)

Thermal storage/discharge performances of Cu-Si alloy for solar thermochemical process

Science.gov (United States)

Gokon, Nobuyuki; Yamaguchi, Tomoya; Cho, Hyun-seok; Bellan, Selvan; Hatamachi, Tsuyoshi; Kodama, Tatsuya

2017-06-01

The present authors (Niigata University, Japan) have developed a tubular reactor system using novel "double-walled" reactor/receiver tubes with carbonate molten-salt thermal storage as a phase change material (PCM) for solar reforming of natural gas and with Al-Si alloy thermal storage as a PCM for solar air receiver to produce high-temperature air. For both of the cases, the high heat capacity and large latent heat (heat of solidification) of the PCM phase circumvents the rapid temperature change of the reactor/receiver tubes at high temperatures under variable and uncontinuous characteristics of solar radiation. In this study, we examined cyclic properties of thermal storage/discharge for Cu-Si alloy in air stream in order to evaluate a potentiality of Cu-Si alloy as a PCM thermal storage material. Temperature-increasing performances of Cu-Si alloy are measured during thermal storage (or heat-charge) mode and during cooling (or heat-discharge) mode. A oxidation state of the Cu-Si alloy after the cyclic reaction was evaluated by using electron probe micro analyzer (EPMA).

The Existence of a Designer Al=Al Double Bond in the LiAl2 H4- Cluster Formed by Electronic Transmutation.

Science.gov (United States)

Lundell, Katie A; Zhang, Xinxing; Boldyrev, Alexander I; Bowen, Kit H

2017-12-22

The Al=Al double bond is elusive in chemistry. Herein we report the results obtained via combined photoelectron spectroscopy and ab initio studies of the LiAl 2 H 4 - cluster that confirm the formation of a conventional Al=Al double bond. Comprehensive searches for the most stable structures of the LiAl 2 H 4 - cluster have shown that the global minimum isomer I possesses a geometric structure which resembles that of Si 2 H 4 , demonstrating a successful example of the transmutation of Al atoms into Si atoms by electron donation. Theoretical simulations of the photoelectron spectrum discovered the coexistence of two isomers in the ion beam, including the one with the Al=Al double bond. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A note on the Sumerian expression SI-ge4-de3/dam

Directory of Open Access Journals (Sweden)

Widell, Magnus

2002-12-01

Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

siRNA as an alternative therapy against viral infections

Directory of Open Access Journals (Sweden)

Hana A. Pawestri

2012-07-01

Full Text Available siRNA (small interfering ribonucleic acid adalah sebuah metode yang dapat digunakan untuk mengatasi infeksi virus yang prinsip kerjanya berdasarkan metode komplementer dsRNA (double stranded RNA pada RNA virus sehingga menyebabkan kegagalan proses transkripsi (silencing.  Untuk lebih memahami bagaimana proses kerja dan ulasan penelitian siRNA yang terkini, di dalam tulisan ini ditinjau siRNA sebagai metoda yang dikembangkan untuk mengatasi infeksi dan meneliti efeknya pada replikasi beberapa virus seperti Hepatitis C, Influenza, Polio, dan HIV. Kami menemukan bahwa urutan basa nukleotida dari target siRNA sangat penting. Hal tersebut harus homolog dengan target RNA virus dan tidak menganggu RNA sel inang. Untuk mengurangi kegagalan terapi siRNA oleh adanya mutasi, digunakan beberapa siRNA yang sekaligus menjadi target RNA virus yang berbeda. Namun demikian, terapi siRNA masih menghadapi beberapa kesulitan seperti pengiriman (transfer khusus ke jaringan yang terinfeksi dan perlindungan siRNA dari perusakan oleh nuklease. Berdasarkan beberapa penelitian yang telah dilakukan, siRNA dapat digunakan sebagai alternatif untuk mengobati infeksi yang disebabkan oleh virus. Terapi tersebut direkomendasikan untuk dilakukan uji klinis dengan memperhatikan beberapa aspek seperti desain siRNA dan mekanisme transfer. (Health Science Indones 2010; 1: 58 - 65 Kata kunci: siRNA, infeksi virus, target virus, alternatif terapi Abstract SiRNA is a promising method to deal with viral infections. The principle of siRNA is based on the complementarily of (synthetic dsRNA to an RNA virus which, in consequence, will be silenced. Many studies are currently examining the effects of siRNA on replication of diverse virus types like Hepatitis C, polio and HIV. The choice of the siRNA target sequence is crucial. It has to be very homologous to the target RNA, but it cannot target RNA of the host cell. To reduce the possibility for the virus to escape from the siRNA therapy by

The hidden secrets of the E-center in Si and Ge

International Nuclear Information System (INIS)

Larsen, Arne Nylandsted; Mesli, Abdelmadjid

2007-01-01

The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Experimental Investigation of Phase Equilibria in the Ho-Ti-Si Ternary System at 973 K (700 °C)

Science.gov (United States)

Han, Feng; Zhan, Yongzhong

2018-02-01

Phase equilibrium relations of the Ho-Ti-Si ternary system at 973 K (700 °C) were experimentally researched by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectrometer (EDS). The isothermal section of the system at 973 K (700 °C) consists of 14 three-phase regions, 27 two-phase regions, and 14 single-phase regions. The phases Ti5Si3, Ti5Si4, TiSi, TiSi2, Ho5Si3, Ho5Si4, HoSi, αHoSi2-b, and βHoSi2-a are proved to exist at 973 K (700 °C). Previously reported HoTiSi and Ho2Ti3Si4 ternary compounds were confirmed to exist at this temperature. The solubility of Ho in the intermediate phases (i.e., TiSi2, TiSi, Ti5Si4, and Ti5Si3) at the Ti-Si side is extremely small. The maximum solubilities of Ti in HoSi2-b, Ho5Si4, and Ho5Si3 are confirmed to be 8.0, 7.2, and 6.0 at. pct, respectively.

Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

Science.gov (United States)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2009-12-01

By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

Tuning ZrFe{sub 4}Si{sub 2} by Ge and Y substitution

Energy Technology Data Exchange (ETDEWEB)

Weber, Katharina [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Institute of Solid State Physics, TU Dresden (Germany); Mufti, Nandang; Bergmann, Christoph; Rosner, Helge; Geibel, Christoph [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Goltz, Til; Klauss, Hans-Henning [Institute of Solid State Physics, TU Dresden (Germany); Woike, Theo [Institute for Structural Physics, TU Dresden (Germany)

2016-07-01

The intermetallic compound series AFe{sub 4}X{sub 2} (A = Y, Lu, Zr; X = Si, Ge) presents a rare case of magnetic frustrated metallic systems. In particular ZrFe{sub 4}Si{sub 2} is of strong interest because our results indicate this system to be very close to a quantum critical point (QCP) where Fe magnetic order disappears. To get a deeper insight into its ground state, we performed a detailed study of Ge and Y substituted ZrFe{sub 4}Si{sub 2}. The isovalent substitution of Ge for Si induces a negative chemical pressure as Ge is larger than Si. As expected from this, the substitution results in the formation of a well-defined antiferromagnetic order with Neel temperatures increasing up to 25 K at 40 % Ge. This confirms ZrFe{sub 4}Si{sub 2} to be extremely close to the QCP, just on the magnetic side of it. With the second substitution series Y{sub x}Zr{sub 1-x}Fe{sub 4}Si{sub 2} we investigate the development from the highly reduced antiferromagnetic order in ZrFe{sub 4}Si{sub 2} towards the two magnetic transitions at 56 K and 76 K, which we see in YFe{sub 4}Si{sub 2}.

Shock dynamics induced by double-spot laser irradiation of layered targets

Directory of Open Access Journals (Sweden)

Aliverdiev Abutrab A.

2015-06-01

Full Text Available We studied the interaction of a double-spot laser beam with targets using the Prague Asterix Laser System (PALS iodine laser working at 0.44 μm wavelength and intensity of about 1015 W/cm2. Shock breakout signals were recorder using time-resolved self-emission from target rear side of irradiated targets. We compared the behavior of pure Al targets and of targets with a foam layer on the laser side. Results have been simulated using hydrodynamic numerical codes.

Infrared Spectra and Structures of SiH{sub 2}-(CH{sub 2}){sub 2} and CH{sub 2}=CH-SiH{sub 3} Intermediates Prepared in Reactions of Laser-ablated Silicon Atoms with Ethane

Energy Technology Data Exchange (ETDEWEB)

Cho, Han-Gook [Incheon National University, Incheon (Korea, Republic of); Andrews, Lester [University of Virginia, Charlottesville (United States)

2016-03-15

SiH{sub 2}-(CH{sub 2}){sub 2} and CH{sub 2}=CH-SiH{sub 3} were observed in the matrix IR spectra following reactions of laser-ablated Si atoms with ethane on the basis of correlation with computed frequencies. Evidently photon energy is required for the formation of the cyclic Si compound. These Si complexes are similar to the primary products in the previous studies of group 4 metals, in line with the previous results that s{sup 2}p{sup 2} and s{sup 2}d{sup 2} electronic configurations yield similar products. The relatively long C–C bond in the cyclic Si product reflects the structural strain, and the short C-Si and C-C bonds of CH{sub 3}CH=SiH{sub 2} and CH{sub 2}=CH-SiH{sub 3} show that they are true double bonds in line with the natural bond orders. Reactions of transition-metal atoms with small alkanes and halomethanes have been studied in a series of recent investigations. High oxidation-state products (methylidenes and methylidynes) along with insertion complexes were identified in the matrix spectra. It is interesting whether or not Si, a group 14 metalloid, undergoes similar reactions with larger hydrocarbons to provide higher oxidation-state compounds.

Electromagnetic dissociation of relativistic [sup 28]Si by nucleon emission

Energy Technology Data Exchange (ETDEWEB)

Sonnadara, U.J.

1992-12-01

A detailed study of the electromagnetic dissociation of [sup 28]Si by nucleon emission at E[sub lab]/A = 14.6 (GeV/nucleon was carried out with [sup 28]Si beams interacting on [sup 208]Pb). [sup 120]Sn. [sup 64]C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z[sub T] and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of [sup 28]Si [yields] p+[sup 27]Al and [sup 28]Si [yields] n+[sup 27]Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in [sup 28]Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear [sup 28]Si([sub [gamma],p])[sup 27]Al and [sup 28]Si([sub [gamma],n])[sup 27]Si. The possibilities of observing double giant dipole resonance excitations in [sup 28]Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

Retrocausation acting in the single-electron double-slit interference experiment

Science.gov (United States)

Hokkyo, Noboru

The single electron double-slit interference experiment is given a time-symmetric interpretation and visualization in terms of the intermediate amplitude of transition between the particle source and the detection point. It is seen that the retarded (causal) amplitude of the electron wave expanding from the source shows an advanced (retrocausal) bifurcation and merging in passing through the double-slit and converges towards the detection point as if guided by the advanced (retrocausal) wave from the detected electron. An experiment is proposed to confirm the causation-retrocausation symmetry of the electron behavior by observing the insensitivity of the interference pattern to non-magnetic obstacles placed in the shadows of the retarded and advanced waves appearing on the rear and front sides of the double-slit.

Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

International Nuclear Information System (INIS)

Uchida, Giichiro; Sato, Muneharu; Seo, Hyunwoong; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

2013-01-01

We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH 4 /H 2 and CH 4 or N 2 gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH 4 or N 2 plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film. - Highlights: • We have developed on Si quantum-dot sensitized solar cells using Si particles. • Current of solar cells increases by surface-termination of Si particles. • Incident photo-to-current conversion efficiency increases below 300 nm

The theory of double layers

International Nuclear Information System (INIS)

Schamel, H.

1982-01-01

Numerical and in some degree laboratory experiments suggest the existence of at least two different kinds of time-independent double layers: a strictly monotonic transition of the electrostatic potential and a transition accompanied by a negative spike at the low potential side (ion acoustic DL). An interpretation of both is presented in terms of analytic BGK modes. The first class of DLs commonly observed in voltage- or beam-driven plasmas needs for its existence beam-type distributions satisfying a Bohm criterion. The potential drop is at least of the order of Tsub(e), and stability arguments favour currents which satisfy the Langmuir condition. The second class found in current-driven plasma simulations is correlated with ion holes. This latter kind of nonlinear wave-solutions is linearly based on the slow ion-acoustic mode and exists due to a vortex-like distortion of the ion distribution in the thermal range. During the growth of an ion hole which is triggered by ion-acoustic fluctuations, the partial reflection of streaming electrons causes different plasma states on both sides of the potential dip and makes the ion hole asymmetric giving rise to an effective potential drop. This implies that the amplitude of this second type of double layers has an upper limit of 1-2 Tsub(e) and presumes a temperature ratio of Tsub(e)/Tsub(i) > or approximately 3 in coincidence with the numerical results. (Auth.)

Microstructure formation and in situ phase identification from undercooled Co-61.8 at.% Si melts solidified on an electromagnetic levitator and an electrostatic levitator

Energy Technology Data Exchange (ETDEWEB)

Li Mingjun [National Institute of Advanced Industrial Science and Technology (AIST), Materials Research Institute for Sustainable Development, 2266-98 Shimo-Shidami, Moriyama, Nagoya, Aichi 463-8560 (Japan); Japan Aerospace Exploration Agency (JAXA), Institute of Space and Astronautical Science (ISAS), Tsukuba Space Centre, ISS Science Project Office, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan)], E-mail: li.mingjun@aist.go.jp; Nagashio, Kosuke [Japan Aerospace Exploration Agency (JAXA), Institute of Space and Astronautical Science (ISAS), Sagamihara Campus, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan); Ishikawa, Takehiko [Japan Aerospace Exploration Agency (JAXA), Institute of Space and Astronautical Science (ISAS), Tsukuba Space Centre, ISS Science Project Office, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Mizuno, Akitoshi; Adachi, Masayoshi; Watanabe, Masahito [Department of Physics, Gakushuin University, 1-5-1 Mejiro, Toshima, Tokyo 171-8588 (Japan); Yoda, Shinichi [Japan Aerospace Exploration Agency (JAXA), Institute of Space and Astronautical Science (ISAS), Tsukuba Space Centre, ISS Science Project Office, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Kuribayashi, Kazuhiko [Japan Aerospace Exploration Agency (JAXA), Institute of Space and Astronautical Science (ISAS), Sagamihara Campus, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan); Katayama, Yoshinori [Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Mikazuki, Sayo, Hyogo 679-5148 (Japan)

2008-06-15

Co-61.8 at.% Si (CoSi-CoSi{sub 2}) eutectic alloys were solidified on an electromagnetic levitator (EML) and an electrostatic levitator (ESL) at different undercooling levels. The results indicated that there is only a single recalescence event at low undercooling with the CoSi intermetallic compound as primary phase, which is independent of processing facilities, on either an EML or an ESL. The microstructure, however, is strongly dependent on the processing facility. The interior melt flow behavior in the sphere solidified at the EML differs substantially from that at the ESL, thus yielding different microstructures. On high undercooling, double recalescence takes place regardless of levitation condition. In situ X-ray diffraction of alloys solidified on the EML demonstrates that the CoSi{sub 2} compound becomes the primary phase upon the first recalescence, and the CoSi intermetallic phase crystallizes during the second recalescence. In addition to phase identification, real-time diffraction patterns can also provide additional evidence of the fragmentation of the primary phase and the ripening feature in the subsequent cooling process in the semisolid state. The phase competition between the CoSi and CoSi{sub 2} compounds is discussed when considering the nucleation barrier. The low interfacial energy of the CoSi{sub 2} phase favors a preferential nucleation event over the CoSi phase, which also plays a critical role in non-reciprocity nucleation and thus yields a double recalescence profile at high undercooling.

Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

Science.gov (United States)

Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

2018-03-01

Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude

Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

Science.gov (United States)

Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

2018-02-26

Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation

Development of a compact 25-channel preamplifier module for Si-pad detectors of the BARC-CPDA

International Nuclear Information System (INIS)

Inkar, A.; John, Bency; Vind, R.P.; Kinage, L.; Jangale, R.V.; Biswas, D.C.; Nayak, B.K.

2011-01-01

The BARC Charged Particle Detector Array modules use indigenously developed Si pad detectors as their first element. Total number of charge sensitive pre-amplifiers required for the Si-pad detectors is 250. One of the main ideas here is a layout of five pre-amplifiers connected with one Si-pad detector (called a bank of preamplifiers). In the present work, a 25-channel pre-amplifier module that can cater to 5 independent Si-pad detectors, or a five-bank module, has been developed. This module uses pre-amp hybrid chips A1422H from CAEN S.p.A. and is housed in a double width NIM standard box. The module has been tested for performance using proton and ''7Li beams from FOTIA facility, Trombay

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

Preliminary calculations of stress change of fuel pin using SiC/SiC composites for GFR with changing of thermal conductivity degradation by irradiation

International Nuclear Information System (INIS)

Lee, J. K.; Naganuma, M.

2006-01-01

Gas cooled Fast Reactor (GFR) is being researched as a candidate concept of Generation IV international Forum. As a main feature of GFR, it should be maintained high temperature and pressure of coolant gas for heat transfer efficiency. Such a demanding environment requires high-temperature-resistant structural materials distinguished from traditional steel material. Consequently, ceramics are promising candidate material of core components. Especially, Silicon Carbide fiber reinforced Silicon Carbide composites (SiC/SiC) have encouraging characteristics such as refractoriness, low activation and toughness. Application of new material to core components must be explained by the viewpoint of engineering validity. Therefore, present study surveyed that current report for mechanical strength and thermal conductivity of SiC/SiC composites. According to the reports, neutron irradiation environment degraded mechanical properties of SiC/SiC composites. To confirm applicability to core components, model of fuel pin using SiC/SiC composites was assumed with feasible mechanical properties. Furthermore, it was calculated and estimated that the stress caused by temperature variation of inner and outer side of assumed model of cladding tube. Stress was calculated by changing of input date such as thickness of cladding tube, temperature variation, thermal conductivity and linear power. In the range of this study, the most important factor was identified as degradation of thermal conductivity by irradiation. It caused a significant stress and limited a geometrical design of fuel pin. It was discussed that the differences of heat transfer between isotropic and anisotropic materials like a metal and composites. These results should be helpful not only to determine a design factor of core component but also to indicate an improvement direction of SiC/SiC composites. Through these work, reliability and safety of GFR will be increased

Double muscle innervation using end-to-side neurorrhaphy in rats Dupla inervação muscular com neurorrafia término-lateral em ratos

Directory of Open Access Journals (Sweden)

Elisangela Jeronymo Stipp-Brambilla

2012-01-01

Full Text Available CONTEXT AND OBJECTIVE: One of the techniques used for treating facial paralysis is double muscle innervation using end-to-end neurorrhaphy with sectioning of healthy nerves. The aim of this study was to evaluate whether double muscle innervation by means of end-to-side neurorrhaphy could occur, with maintenance of muscle innervation. DESIGN AND SETTING: Experimental study developed at the Experimental Research Center, Faculdade de Medicina de Botucatu, Unesp. METHODS: One hundred rats were allocated to five groups as follows: G1, control group; G2, the peroneal nerve was sectioned; G3, the tibial nerve was transected and the proximal stump was end-to-side sutured to the intact peroneal nerve; G4, 120 days after the G3 surgery, the peroneal nerve was sectioned proximally to the neurorrhaphy; G5, 120 days after the G3 surgery, the peroneal and tibial nerves were sectioned proximally to the neurorrhaphy. RESULTS: One hundred and fifty days after the surgery, G3 did not show any change in tibial muscle weight or muscle fiber diameter, but the axonal fiber diameter in the peroneal nerve distal to the neurorrhaphy had decreased. Although G4 showed atrophy of the cranial tibial muscle 30 days after sectioning the peroneal nerve, the electrophysiological test results and axonal diameter measurement confirmed that muscle reinnervation had occurred. CONCLUSION: These findings suggest that double muscle innervation did not occur through end-to-side neurorrhaphy; the tibial nerve was not able to maintain muscle innervation after the peroneal nerve had been sectioned, although muscle reinnervation was found to have occurred, 30 days after the peroneal nerve had been sectioned.CONTEXTO E OBJETIVO: Uma das técnicas utilizadas para tratamento da paralisia facial é a dupla inervação muscular com neurorrafia término-terminal, seccionando-se nervos sadios. O objetivo deste trabalho foi avaliar a ocorrência de dupla inervação muscular através de

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

Positive pressure ventilation in a patient with a right upper lobar bronchocutaneous fistula: right upper bronchus occlusion using the cuff of a left-sided double lumen endobronchial tube.

Science.gov (United States)

Omori, Chieko; Toyama, Hiroaki; Takei, Yusuke; Ejima, Yutaka; Yamauchi, Masanori

2017-08-01

In patients with a bronchocutaneous fistula, positive pressure ventilation leads to air leakage and potential hypoxemia. A male patient with a right upper bronchocutaneous fistula was scheduled for esophageal reconstruction. His preoperative chest computed tomography image revealed aeration in the right middle and lower lobe, a large bulla in the left upper lobe, and pleural effusion and pneumonia in the left lower lobe. Therefore, left one-lung ventilation was considered to result in hypoxemia. Before anesthesia induction, the bronchocutaneous fistula was covered with gauze and film to prevent air leakage. After anesthesia induction, mask ventilation was performed with a peak positive pressure of 10 cmH 2 O. A left-sided double lumen endobronchial tube (DLT) was then inserted into the right main bronchus for occluding only the right superior bronchus, and two-lung ventilation was performed to minimize airway pressure and maintain oxygenation, which did not cause air leakage through the fistula. During anesthesia, no ventilation-related difficulty was faced. The method of inserting a left-sided DLT into the right main bronchus and occluding the right upper bronchus selectively by bronchial cuff is considered to be an option for mechanical ventilation in patients with a right upper bronchial fistula, as demonstrated in the present case.

A randomized, double-blind, placebo-controlled crossover study of ...

African Journals Online (AJOL)

Erectile dysfunction (ED) is one of the major health concerns affects the quality of life among Thai male. The treatment of ED by the first-line drugs is limited to a certain group of patients due to their side effects and costs. Alternative medicine can be beneficial for the treatment of ED. This is a randomized, double-blind, ...

ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION USING THE DOUBLE-BUNDLE TECHNIQUE – EVALUATION IN THE BIOMECHANICS LABORATORY

Science.gov (United States)

D'Elia, Caio Oliveira; Bitar, Alexandre Carneiro; Castropil, Wagner; Garofo, Antônio Guilherme Padovani; Cantuária, Anita Lopes; Orselli, Maria Isabel Veras; Luques, Isabela Ugo; Duarte, Marcos

2015-01-01

Objective: The objective of this study was to describe the methodology of knee rotation analysis using biomechanics laboratory instruments and to present the preliminary results from a comparative study on patients who underwent anterior cruciate ligament (ACL) reconstruction using the double-bundle technique. Methods: The protocol currently used in our laboratory was described. Three-dimensional kinematic analysis was performed and knee rotation amplitude was measured on eight normal patients (control group) and 12 patients who were operated using the double-bundle technique, by means of three tasks in the biomechanics laboratory. Results: No significant differences between operated and non-operated sides were shown in relation to the mean amplitudes of gait, gait with change in direction or gait with change in direction when going down stairs (p > 0.13). Conclusion: The preliminary results did not show any difference in the double-bundle ACL reconstruction technique in relation to the contralateral side and the control group. PMID:27027003

Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface