Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

Science.gov (United States)

Lüker, S.; Kuhn, T.; Reiter, D. E.

2017-12-01

Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

Quantum-dot based nanothermometry in optical plasmonic recording media

International Nuclear Information System (INIS)

Maestro, Laura Martinez; Zhang, Qiming; Li, Xiangping; Gu, Min; Jaque, Daniel

2014-01-01

We report on the direct experimental determination of the temperature increment caused by laser irradiation in a optical recording media constituted by a polymeric film in which gold nanorods have been incorporated. The incorporation of CdSe quantum dots in the recording media allowed for single beam thermal reading of the on-focus temperature from a simple analysis of the two-photon excited fluorescence of quantum dots. Experimental results have been compared with numerical simulations revealing an excellent agreement and opening a promising avenue for further understanding and optimization of optical writing processes and media

Noise and saturation properties of semiconductor quantum dot optical amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

Directory of Open Access Journals (Sweden)

Nobuaki Hatori

2015-04-01

Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

Optical properties of pH-sensitive carbon-dots with different modifications

Energy Technology Data Exchange (ETDEWEB)

Kong, Weiguang, E-mail: 11236095@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Wu, Huizhen, E-mail: hzwu@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Ye, Zhenyu, E-mail: yzheny@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Li, Ruifeng, E-mail: hbrook@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Xu, Tianning, E-mail: xtn9886@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Zhang, Bingpo, E-mail: 11006080@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

2014-04-15

Carbon dots with unique characters of chemical inertness, low cytotoxicity and good biocompatibility, demonstrate important applications in biology and optoelectronics. In this paper we report the optical properties of pH-sensitive carbon dots with different surface modifications. The as-prepared carbon dots can be well dispersed in water by modifying with acid, alkali or metal ions though they tend to form a suspension when being directly dispersed in water. We find that the carbon dots dispersed in water show a new emission and absorption character which is tunable due to the pH-sensitive nature. It is firstly proved that the addition of bivalent copper ions offers a high color contrast for visual colorimetric assays for pH measurement. The effect of surface defects with different modification on the performances of the carbon dots is also explored with a core–shell model. The hydro-dispersed carbon dots can be potentially utilized for cellular imaging or metal ion probes in biochemistry. -- Highlights: • The dispersibility in water of as-prepared carbon dots is effectively improved by the addition of acid, alkali or metal ions. • The effect of hydrolysis on the optical properties of the carbon dots is studied. • The luminescent carbon dots show a pH-sensitive fluorescence and absorption property. • The addition of bivalent copper ions in the post-treated carbon dots offers a high color contrast for visual colorimetric assays for pH measurement. • The effect of surface defects and ligands on the performances of the carbon dots is also explored.

Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

National Research Council Canada - National Science Library

Raymer, Michael

2003-01-01

An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

Optical bistability of optical fiber ring doped by Erbium and quantum dots

International Nuclear Information System (INIS)

Safari, S.; Tofighi, S.; Bahrampour, A.; Sajad, B.; Shahshahani, F.

2012-01-01

In this paper, theoretical analysis of the steady state behavior of the optical bistability in an optical fiber ring doped by Erbium and quantum dots is presented. The up and down switching power is calculated and the dependence of the switching power on different fiber ring parameters is investigated. The switching power for this type of optical bistability device is obtained much lower than the fiber ring which its half length is doped by Erbium ion.

Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

Science.gov (United States)

Bracker, A. S.; Stinaff, E. A.; Gammon, D.; Ware, M. E.; Tischler, J. G.; Shabaev, A.; Efros, Al. L.; Park, D.; Gershoni, D.; Korenev, V. L.; Merkulov, I. A.

2005-02-01

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

Synthesis, characterization and non-linear optical response of organophilic carbon dots

KAUST Repository

Bourlinos, Athanasios B.

2013-09-01

For the first time ever we report the nonlinear optical (NLO) properties of carbon dots (C-dots). The C-dots for these experiments were synthesized by mild pyrolysis of lauryl gallate. The resulting C-dots bear lauryl chains and, hence, are highly dispersible in polar organic solvents, like chloroform. Dispersions in CHCl3 show significant NLO response. Specifically, the C-dots show negative nonlinear absorption coefficient and negative nonlinear refraction. Using suspensions with different concentrations these parameters are quantified and compared to those of fullerene a well-known carbon molecule with proven NLO response. © 2013 Elsevier Ltd. All rights reserved.

Synthesis, characterization and non-linear optical response of organophilic carbon dots

KAUST Repository

Bourlinos, Athanasios B.; Karakassides, Michael A.; Kouloumpis, Antonios; Gournis, Dimitrios; Bakandritsos, Aristides; Papagiannouli, Irene; Aloukos, Panagiotis; Couris, Stelios; Hola, Katerina; Zboril, Radek; Krysmann, Marta; Giannelis, Emmanuel P.

2013-01-01

For the first time ever we report the nonlinear optical (NLO) properties of carbon dots (C-dots). The C-dots for these experiments were synthesized by mild pyrolysis of lauryl gallate. The resulting C-dots bear lauryl chains and, hence, are highly dispersible in polar organic solvents, like chloroform. Dispersions in CHCl3 show significant NLO response. Specifically, the C-dots show negative nonlinear absorption coefficient and negative nonlinear refraction. Using suspensions with different concentrations these parameters are quantified and compared to those of fullerene a well-known carbon molecule with proven NLO response. © 2013 Elsevier Ltd. All rights reserved.

Quantum Dots

Science.gov (United States)

Tartakovskii, Alexander

2012-07-01

Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

Optical spectroscopy of single, planar, self-assembled InAs/InP quantum dots

International Nuclear Information System (INIS)

Kim, D.; Williams, R.L.; Lefebvre, J.; Lapointe, J.; Reimer, M.E.; Mckee, J.; Poole, P.J.

2006-01-01

We present optical spectra from numerous, single, self-assembled InAs/InP quantum dots. More than 50 individual dots are studied that emit in the 1.1-1.6 mm wavelength range. The dots are of high optical quality as judged by the clean, single exciton emission line at low power, the resolution limited linewidth, and the brightness. Each dot exhibits similar trends in the power evolution spectra, despite large variations in height and diameter. The level splittings in the p -shell increase with decreasing height, which we interpret to be from dot elongation along the [01 anti 1] direction. The evolution of the spectra with increasing power agrees well with predictions from effective bond orbital calculations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polyaniline/carbon nanotube/CdS quantum dot composites with enhanced optical and electrical properties

Energy Technology Data Exchange (ETDEWEB)

Goswami, Mrinmoy [Department of Physics, National Institute of Technology, Durgapur, 713209 (India); Ghosh, Ranajit, E-mail: ghosh.ranajit@gmail.com [CSIR-Central Mechanical Engineering Research Institute, Durgapur, 713209 (India); Maruyama, Takahiro [Department of Applied Chemistry, Meijo University, Nagoya, 4688502 (Japan); Meikap, Ajit Kumar [Department of Physics, National Institute of Technology, Durgapur, 713209 (India)

2016-02-28

Graphical abstract: - Highlights: • A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been synthesized via in-situ polymerization of aniline monomer. • A degree of increase in conductivity. • Size-dependent optical properties of CdS quantum dots have been observed. - Abstract: A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7–4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.

Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

Directory of Open Access Journals (Sweden)

Deepti Maikhuri

2012-03-01

Full Text Available In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework of effective mass approximation, we have studied intraband S-P, and P-D transitions in a singly charged spherical ZnO quantum dot. The optical properties are investigated in terms of the linear and nonlinear photoabsorption coefficient, the change in refractive index, and the third order nonlinear susceptibility and oscillator strengths. Using the parabolic confinement potential of electron in the dot these parameters are studied with the variation of the dot size, and the energy and intensity of incident radiation. The photoionization cross sections are also obtained for the different dot radii from the initial ground state of the dot. It is found that dot size, confinement potential, and incident radiation intensity affects intraband optical properties of the dot significantly.

Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

DEFF Research Database (Denmark)

Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

2003-01-01

We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

Quantum interference and control of the optical response in quantum dot molecules

Energy Technology Data Exchange (ETDEWEB)

Borges, H. S.; Sanz, L.; Villas-Boas, J. M.; Alcalde, A. M. [Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia-MG (Brazil)

2013-11-25

We discuss the optical response of a quantum molecule under the action of two lasers fields. Using a realistic model and parameters, we map the physical conditions to find three different phenomena reported in the literature: the tunneling induced transparency, the formation of Autler-Townes doublets, and the creation of a Mollow-like triplet. We found that the electron tunneling between quantum dots is responsible for the different optical regime. Our results not only explain the experimental results in the literature but also give insights for future experiments and applications in optics using quantum dots molecules.

Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

DEFF Research Database (Denmark)

Nguyen, H.A.; Grange, T.; Malik, N.S.

2017-01-01

Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....

Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

2016-05-03

This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

Reduced reabsorption and enhanced propagation induced by large Stokes shift in quantum dot-filled optical fiber

Energy Technology Data Exchange (ETDEWEB)

Wu, Hua; Zhang, Yu, E-mail: yuzhang@jlu.edu.cn; Lu, Min; Liu, Wenyan [Jilin University, State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering (China); Xu, Jian [The Pennsylvania State University, Department of Engineering Science and Mechanics (United States); Yu, William W., E-mail: wyu6000@gmail.com [Jilin University, State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering (China)

2016-07-15

With tunable emission wavelength, high photoluminescence quantum yield, and broad absorption, colloidal quantum dots are attractive for the application in optical fiber as dopants. However, most of the quantum dots have a large overlap between their absorption and photoluminescence spectra, resulting in reabsorption loss which hinders the realization of long-distance waveguides. Therefore, ZnCuInS/ZnSe/ZnS quantum dots with large Stokes shift were proposed to fabricate a liquid-core optical fiber in this work. In this work, ZnCuInS/ZnSe/ZnS QDs with an average size of 3.3 nm were synthesized and the optical properties of the QD-filled fiber were also investigated as a function of fiber length and doping concentration. Compared to the control sample filled with CdSe/CdS/ZnS quantum dots, the ZnCuInS/ZnSe/ZnS quantum dot-based waveguides showed reduced reabsorption and enhanced signal propagation, which demonstrates great potential of large Stokes-shift quantum dots in optical waveguide devices.Graphical AbstractA reduced reabsorption and enhanced propagation of ZnCuInS/ZnSe/ZnS QDs-doped liquid-core optical fiber was achieved due to the large Stokes shift.

Suppression of spin and optical gaps in phosphorene quantum dots

Science.gov (United States)

Zhang, Yingjie; Sheng, Weidong

2018-05-01

Electronic structure and optical properties of triangular phosphorene quantum dots have been investigated theoretically. Based on systematic configuration interaction calculations, the ground and excited states of the interacting many-electron system together with its optical absorption spectrum are obtained. For the nanodot with 60 phosphorus atoms in various dielectric environments, it is found that the spin gap of the correlated system surprisingly overlaps its optical gap over a large range of the effective dielectric constant. The overlapping of the spin and optical gaps can be attributed to the fact that the extra correlation energy in the spin singlet almost compensates the exchange energy in the spin triplet in the presence of strong long-range electron-electron interactions. Moreover, both the spin and optical gaps are shown to be greatly suppressed as the screening effect becomes strong. When the dielectric constant decreases below 2.65, it is seen that the spin gap becomes negative and the quantum dot undergoes a phase transition from nonmagnetic to ferromagnetic. Our results are compared with the previous experimental and theoretical works.

Optical response of a quantum dot-metal nanoparticle hybrid interacting with a weak probe field.

Science.gov (United States)

Kosionis, Spyridon G; Terzis, Andreas F; Sadeghi, Seyed M; Paspalakis, Emmanuel

2013-01-30

We study optical effects in a hybrid system composed of a semiconductor quantum dot and a spherical metal nanoparticle that interacts with a weak probe electromagnetic field. We use modified nonlinear density matrix equations for the description of the optical properties of the system and obtain a closed-form expression for the linear susceptibilities of the quantum dot, the metal nanoparticle, and the total system. We then investigate the dependence of the susceptibility on the interparticle distance as well as on the material parameters of the hybrid system. We find that the susceptibility of the quantum dot exhibits optical transparency for specific frequencies. In addition, we show that there is a range of frequencies of the applied field for which the susceptibility of the semiconductor quantum dot leads to gain. This suggests that in such a hybrid system quantum coherence can reverse the course of energy transfer, allowing flow of energy from the metallic nanoparticle to the quantum dot. We also explore the susceptibility of the metal nanoparticle and show that it is strongly influenced by the presence of the quantum dot.

Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

DEFF Research Database (Denmark)

Poel, Mike van der; Hvam, Jørn Märcher

2007-01-01

We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

The synthesis of CdSe quantum dots with carboxyl group and study on their optical characteristics

International Nuclear Information System (INIS)

Ye, Chen; Park, Sangjoon; Kim, Jongsung

2009-01-01

Quantum dots are nanocrystal semiconductors which attract lots of research interests due to their peculiar optical properties. CdSe/ZnS quantum dots have been synthesized via pyrolysis of organometallic reagents. The color of the quantum dot changes from yellow-green to red as their size increases with reaction time. Photoluminescence quantum efficiency of CdSe quantum dots have been enhanced by passivating the surface of CdSe quantum dots with ZnS layers. Quantum dots are nanocrystal semiconductors which attract lots of research interests due to their peculiar optical properties. CdSe/ZnS quantum dots have been synthesized via pyrolysis of organometallic reagents. The color of the quantum dot changes from yellow-green to red as their size increases with reaction time. Photoluminescence quantum efficiency of CdSe quantum dots have been enhanced by passivating the surface of CdSe quantum dots with ZnS layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

International Nuclear Information System (INIS)

Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

2008-01-01

Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

Electrical versus optical pumping of quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Bischoff, Svend; Mørk, Jesper

2001-01-01

The influence of the pumping mechanism for the dynamical properties of quantum dot amplifiers is investigated for 10, 40 and 160 GHz signals. A fast response is predicted in the case of optical pumping in the wetting layer (WL). The combination of fast relaxation and capture times and the presence...... of a reservoir of carriers in the WL opens up for the possibility of ultrafast gain recovery in QD devices. The strength of optical contra electrical pumping is that it reduces the bottleneck effect of a slow WL. Optical pumping thus allows significant improvement of the dynamical properties of QD devices....

Optical levitation of microdroplet containing a single quantum dot

OpenAIRE

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2014-01-01

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This paper presents the realization of an optically levitated solid-state quantum emitter. This paper was published in Optics Letters and is made avai...

Polyaniline/carbon nanotube/CdS quantum dot composites with enhanced optical and electrical properties

Science.gov (United States)

Goswami, Mrinmoy; Ghosh, Ranajit; Maruyama, Takahiro; Meikap, Ajit Kumar

2016-02-01

A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7-4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.

Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

Interplay of coupling and superradiant emission in the optical response of a double quantum dot

Science.gov (United States)

Sitek, Anna; Machnikowski, Paweł

2009-09-01

We study theoretically the optical response of a double quantum dot structure to an ultrafast optical excitation. We show that the interplay of a specific type of coupling between the dots and their collective interaction with the radiative environment leads to very characteristic features in the time-resolved luminescence as well as in the absorption spectrum of the system. For a sufficiently strong coupling, these effects survive even if the transition energy mismatch between the two dots exceeds by far the emission linewidth.

Optically Driven Spin Based Quantum Dots for Quantum Computing - Research Area 6 Physics 6.3.2

Science.gov (United States)

2015-12-15

SECURITY CLASSIFICATION OF: This program conducted experimental and theoretical research aimed at developing an optically driven quantum dot quantum ...computer, where, the qubit is the spin of the electron trapped in a self-assembled quantum dot in InAs. Optical manipulation using the trion state...reports. In this reporting period, we discovered the nuclear spin quieting first discovered in 2008 is present in vertically coupled quantum dots but

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

Optical and structural properties of carbon dots/TiO2 nanostructures prepared via DC arc discharge in liquid

Science.gov (United States)

Biazar, Nooshin; Poursalehi, Reza; Delavari, Hamid

2018-01-01

Synthesis and development of visible active catalysts is an important issue in photocatalytic applications of nanomaterials. TiO2 nanostructures coupled with carbon dots demonstrate a considerable photocatalytic activity in visible wavelengths. Extending optical absorption of a wide band gap semiconductor such as TiO2 with carbon dots is the origin of the visible activity of carbon dots modified semiconductor nanostructures. In addition, carbon dots exhibit high photostability, appropriate electron transport and chemical stability without considerable toxicity or environmental footprints. In this study, optical and structural properties of carbon dots/TiO2 nanostructures prepared via (direct current) DC arc discharge in liquid were investigated. Crystal structure, morphology and optical properties of the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-visible spectroscopy respectively. SEM images show formation of spherical nanoparticles with an average size of 27 nm. In comparison with pristine TiO2, optical transmission spectrum of carbon dots/TiO2 nanostructures demonstrates an absorption edge at longer wavelengths as well a high optical absorption in visible wavelengths which is significant for visible activity of nanostructures as a photocatalyst. Finally, these results can provide a flexible and versatile pathway for synthesis of carbon dots/oxide semiconductor nanostructures with an appropriate activity under visible light.

Second-harmonic scanning optical microscopy of semiconductor quantum dots

DEFF Research Database (Denmark)

Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.

2001-01-01

Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...... in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We...

Optical pumping and negative luminescence polarization in charged GaAs quantum dots

Science.gov (United States)

Shabaev, Andrew; Stinaff, Eric A.; Bracker, Allan S.; Gammon, Daniel; Efros, Alexander L.; Korenev, Vladimir L.; Merkulov, Igor

2009-01-01

Optical pumping of electron spins and negative photoluminescence polarization are observed when interface quantum dots in a GaAs quantum well are excited nonresonantly by circularly polarized light. Both observations can be explained by the formation of long-lived dark excitons through hole spin relaxation in the GaAs quantum well prior to exciton capture. In this model, optical pumping of resident electron spins is caused by capture of dark excitons and recombination in charged quantum dots. Negative polarization results from accumulation of dark excitons in the quantum well and is enhanced by optical pumping. The dark exciton model describes the experimental results very well, including intensity and bias dependence of the photoluminescence polarization and the Hanle effect.

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

Science.gov (United States)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

Effect of carrier doping and external electric field on the optical properties of graphene quantum dots

Science.gov (United States)

Basak, Tista; Basak, Tushima

2018-02-01

In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.

Quantum Optics with Near-Lifetime-Limited Quantum-Dot Transitions in a Nanophotonic Waveguide.

Science.gov (United States)

Thyrrestrup, Henri; Kiršanskė, Gabija; Le Jeannic, Hanna; Pregnolato, Tommaso; Zhai, Liang; Raahauge, Laust; Midolo, Leonardo; Rotenberg, Nir; Javadi, Alisa; Schott, Rüdiger; Wieck, Andreas D; Ludwig, Arne; Löbl, Matthias C; Söllner, Immo; Warburton, Richard J; Lodahl, Peter

2018-03-14

Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise are of importance, and the influence of photonic nanostructures on the broadening has not been clarified. We present near-lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of 66 ± 4%, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out; i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.

Electronic transient processes and optical spectra in quantum dots for quantum computing

Czech Academy of Sciences Publication Activity Database

Král, Karel; Zdeněk, Petr; Khás, Zdeněk

2004-01-01

Roč. 3, č. 1 (2004), s. 17-25 ISSN 1536-125X R&D Projects: GA AV ČR IAA1010113 Institutional research plan: CEZ:AV0Z1010914 Keywords : depopulation * electronic relaxation * optical spectra * quantum dots * self-assembled quantum dots * upconversion Subject RIV: BE - Theoretical Physics Impact factor: 3.176, year: 2004

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Modelling exciton–phonon interactions in optically driven quantum dots

DEFF Research Database (Denmark)

Nazir, Ahsan; McCutcheon, Dara

2016-01-01

We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...

Coherently-enabled environmental control of optics and energy transfer pathways of hybrid quantum dot-metallic nanoparticle systems.

Science.gov (United States)

Hatef, Ali; Sadeghi, Seyed M; Fortin-Deschênes, Simon; Boulais, Etienne; Meunier, Michel

2013-03-11

It is well-known that optical properties of semiconductor quantum dots can be controlled using optical cavities or near fields of localized surface plasmon resonances (LSPRs) of metallic nanoparticles. In this paper we study the optics, energy transfer pathways, and exciton states of quantum dots when they are influenced by the near fields associated with plasmonic meta-resonances. Such resonances are formed via coherent coupling of excitons and LSPRs when the quantum dots are close to metallic nanorods and driven by a laser beam. Our results suggest an unprecedented sensitivity to the refractive index of the environment, causing significant spectral changes in the Förster resonance energy transfer from the quantum dots to the nanorods and in exciton transition energies. We demonstrate that when a quantum dot-metallic nanorod system is close to its plasmonic meta-resonance, we can adjust the refractive index to: (i) control the frequency range where the energy transfer from the quantum dot to the metallic nanorod is inhibited, (ii) manipulate the exciton transition energy shift of the quantum dot, and (iii) disengage the quantum dot from the metallic nanoparticle and laser field. Our results show that near meta-resonances the spectral forms of energy transfer and exciton energy shifts are strongly correlated to each other.

Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

International Nuclear Information System (INIS)

Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

2003-01-01

The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

Reinventing Corporate Communications.

Science.gov (United States)

Toth, Elizabeth L.; Trujillo, Nick

1987-01-01

Urges a "re-inventing" of corporate communications in today's organizations, and provides information about how corporations can change in new and positive ways during the current "information age." Discusses specific public relations and organizational communication concepts essential for a comprehensive understanding of…

Asymmetrical shapes of optical line profiles in individual quantum dots

Czech Academy of Sciences Publication Activity Database

Král, Karel; Kratochvílová, Irena; Menšík, Miroslav

2009-01-01

Roč. 282, č. 9 (2009), s. 1801-1806 ISSN 0030-4018 R&D Projects: GA MŠk ME 866; GA MŠk OC 137; GA ČR GA202/07/0643 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40500505 Keywords : optical spectra * quantum dots * optical phonons Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.316, year: 2009

Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

Science.gov (United States)

Bracker, Allan; Gershoni, David; Korenev, Vladimir

2005-03-01

We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements

DEFF Research Database (Denmark)

Johansen, Jeppe; Stobbe, Søren; Nikolaev, Ivan S.

2008-01-01

and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics......The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results...

Co-registration of fluorescence diffuse optical tomography (fDOT) with positron emission tomography (PET) and development of multi-angle fDOT

International Nuclear Information System (INIS)

Tong, X.

2012-01-01

This thesis concerns the image processing of fluorescence diffuse optical tomography (fDOT), following two axes: fDOT image co-registration with PET (positron emission tomography) image and improvement of fDOT image reconstructions using mirrors to collect additional projections. It is presented in two parts:In the first part, an automatic method to co-register the fDOT images with PET images has been developed to correlate all the information from each modality. This co-registration method is based on automatic detection of fiducial markers (FM) present in both modalities. The particularity of this method is the use of optical surface image obtained in fDOT imaging system, which serves to identify the Z position of FM in optical images. We tested this method on a model of mice bearing tumor xenografts of MEN2A cancer cells that mimic a human medullary thyroid carcinoma, after a double injection of radiotracer [ 18 F] 2-fluoro-2-Deoxy-D-glucose (FDG) for PET imaging and optical fluorescent infrared tracer Sentidye. With the accuracy of our method, we can demonstrate that the signal of Sentidye is present both in the tumor and surrounding vessels.The fDOT reconstruction image quality is degraded along the Z axis due to a limited number of projections for reconstruction. In the second part, the work is oriented towards a new method of fDOT image reconstruction with a new multi-angle data acquisition system in placing two mirrors on each side of the animal. This work was conducted in collaboration with the CS Department of University College London (UCL), a partner of the European project FMT-XCT. TOAST software developed by this team was used as source code for the reconstruction algorithm, and was modified to adapt to the concerned problem. After several tests on the adjustment of program parameters, we applied this method on a phantom that simulating the biological tissue and on mice. The results showed an improvement in the reconstructed image of a semi

Low threshold optical bistability and superluminal light propagation using a dielectric slab via inter-dot tunneling

International Nuclear Information System (INIS)

Taherzadeh, S; Nasehi, R; Mahmoudi, Mohammad

2015-01-01

The optical bistability (OB) behavior of a dielectric slab doped with quantum dot (QD) molecules is investigated in the presence of the inter-dot tunneling effect. It is shown that the threshold point of OB reduces by increasing inter-dot tunneling as well as by reducing the slab thickness. It is worth noting that the threshold of OB in a slab doped with QD molecules is smaller, by at least one order of magnitude, in respect to free QD molecules. We find that the inter-dot tunneling induces a negative group delay to the reflected pulse and it propagates in the superluminal region. Such simple control can be used in all optical switching. (paper)

High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

Science.gov (United States)

Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

2010-03-29

A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherence

International Nuclear Information System (INIS)

Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.

2003-01-01

We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity

Biodistribution study of carbogenic dots in cells and in vivo for optical imaging

International Nuclear Information System (INIS)

Li Nan; Liang Xiaofei; Wang Lili; Li Zonghai; Li Peiyong; Zhu Yihua; Song Jing

2012-01-01

Blue fluorescent carbon dots (C-dots) were synthesized and evaluated for their cytotoxicity and also for their optical imaging performance. The results showed that the C-dots could enter into the Hela cells in 15 min incubation and the uptake increased rapidly from 15 min to 2 h. In cytotoxicity study, C-dots were biocompatible and nontoxic to three human cells including two cancer cells (Hela and SMCC-7721) and one normal cell (HEK 293) in concentrations up to 500 μg/mL. Since the endocytic interference factors, including NaN 3 , MβCD, sucrose, and low temperature, could not play an inhibitory effect on C-dots entering into cells, the direct nonendocytic pathway for C-dots was speculated. The C-dots showed encouraging cell-imaging applications in vitro and in vivo. They entered into cells without any further functionalization, and the fluorescence property of these particles can be used for fluorescence-based cell-imaging applications.

Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

Science.gov (United States)

Ding, Yi-Min; Shi, Jun-Jie; Zhang, Min; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang; Guo, Wen-Hui

2018-02-01

It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

Reinventing government: Reinventing Hanford

International Nuclear Information System (INIS)

Mayeda, J.T.

1994-05-01

The Hanford Site was established in 1943 as one of the three original Manhattan Project locations involved in the development of atomic weapons. It continued as a defense production center until 1988, when its mission changed to environmental restoration and remediation. The Hanford Site is changing its business strategy and in doing so, is reinventing government. This new development has been significantly influenced by a number of external sources. These include: the change in mission, reduced security requirements, new found partnerships, fiscal budgets, the Tri-Party agreement and stakeholder involvement. Tight budgets and the high cost of cleanup require that the site develop and implement innovative cost saving approaches to its mission. Costeffective progress is necessary to help assure continued funding by Congress

Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

Science.gov (United States)

de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

2017-10-31

Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

Colloidal PbSe quantum dot-solution-filled liquid-core optical fiber for 1.55 μm telecommunication wavelengths

International Nuclear Information System (INIS)

Zhang, Lei; Zhang, Yu; Yu, William W; Gu, Pengfei; Wang, Yiding; Kershaw, Steve V; Wang, Yu; Rogach, Andrey L; Zhao, Yanhui; Jiang, Yongheng; Zhang, Tieqiang; Zhang, Hanzhuang

2014-01-01

We have studied the optical properties of PbSe colloidal quantum dot-solution filled hollow core multimode silica waveguides as a function of quantum dot-solution concentration, waveguide length, optical pump power and choice of organic solvent in order to establish the conditions to maximize near infrared spontaneous emission intensities. The optical performance was compared and showed good agreement with a simple three level system model for the quantum dots confined in an optical waveguide. Near infrared absorption-free solvent of tetrachlorethylene was confirmed to be a good candidate for the waveguide medium due to the enhancement of output intensity from the liquid-core fiber compared to the performance in toluene-based fiber. This approach demonstrates a useful method for early characterization of quantum dot materials in a waveguide test-bed with minimal material processing on the colloidal nanoparticles. (paper)

Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures

Energy Technology Data Exchange (ETDEWEB)

Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Li, Bang; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 (China)

2016-02-15

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski-Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube-root dependence on the excitation power is observed, suggesting a type-II band alignment. The peak position of dots initially red-shifts and then blue-shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis on nonlinear optical properties of Cd (Zn) Se quantum dots synthesized using three different stabilizing agents

Science.gov (United States)

J, Joy Sebastian Prakash; G, Vinitha; Ramachandran, Murugesan; Rajamanickam, Karunanithi

2017-10-01

Three different stabilizing agents, namely, L-cysteine, Thioglycolic acid and cysteamine hydrochloride were used to synthesize Cd(Zn)Se quantum dots (QDs). It was characterized using UV-vis spectroscopy, x-ray diffraction (XRD) and transmission electron microscopy (TEM). The non-linear optical properties (non-linear absorption and non-linear refraction) of synthesized Cd(Zn)Se quantum dots were studied with z-scan technique using diode pumped continuous wavelaser system at a wavelength of 532 nm. Our (organic) synthesized quantum dots showed optical properties similar to the inorganic materials reported elsewhere.

DYNAMISM OF DOT SUBRETINAL DRUSENOID DEPOSITS IN AGE-RELATED MACULAR DEGENERATION DEMONSTRATED WITH ADAPTIVE OPTICS IMAGING.

Science.gov (United States)

Zhang, Yuhua; Wang, Xiaolin; Godara, Pooja; Zhang, Tianjiao; Clark, Mark E; Witherspoon, C Douglas; Spaide, Richard F; Owsley, Cynthia; Curcio, Christine A

2018-01-01

To investigate the natural history of dot subretinal drusenoid deposits (SDD) in age-related macular degeneration, using high-resolution adaptive optics scanning laser ophthalmoscopy. Six eyes of four patients with intermediate age-related macular degeneration were studied at baseline and 1 year later. Individual dot SDD within the central 30° retina were examined with adaptive optics scanning laser ophthalmoscopy and optical coherence tomography. A total of 269 solitary SDD were identified at baseline. Over 12.25 ± 1.18 months, all 35 Stage 1 SDD progressed to advanced stages. Eighteen (60%) Stage 2 lesions progressed to Stage 3 and 12 (40%) remained at Stage 2. Of 204 Stage 3 SDD, 12 (6.4%) disappeared and the rest remained. Twelve new SDD were identified, including 6 (50%) at Stage 1, 2 (16.7%) at Stage 2, and 4 (33.3%) at Stage 3. The mean percentage of the retina affected by dot SDD, measured by the adaptive optics scanning laser ophthalmoscopy, increased in 5/6 eyes (from 2.31% to 5.08% in the most changed eye) and decreased slightly in 1/6 eye (from 10.67% to 10.54%). Dynamism, the absolute value of the areas affected by new and regressed lesions, ranged from 0.7% to 9.3%. Adaptive optics scanning laser ophthalmoscopy reveals that dot SDD, like drusen, are dynamic.

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

Science.gov (United States)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Superradiance Effects in the Linear and Nonlinear Optical Response of Quantum Dot Molecules

Science.gov (United States)

Sitek, A.; Machnikowski, P.

2008-11-01

We calculate the linear optical response from a single quantum dot molecule and the nonlinear, four-wave-mixing response from an inhomogeneously broadened ensemble of such molecules. We show that both optical signals are affected by the coupling-dependent superradiance effect and by optical interference between the two polarizations. As a result, the linear and nonlinear responses are not identical.

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

2016-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Weber, Carsten

2008-07-01

This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

InP quantum dots embedded in GaP: Optical properties and carrier dynamics

International Nuclear Information System (INIS)

Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

2003-01-01

The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

Optical studies of intersublevel-transitions in self-organized InGaAs/GaAs quantum dots

International Nuclear Information System (INIS)

Weber, A.

2005-01-01

In this thesis intersublevel-transitions in self-organized InGaAs/GaAs quantum dots are studied with spectroscopic methods. The charge-dependent absorption behaviour of the nanostructures in the intermediate infrared is studied by a new combination of Fourier spectroscopy and calorimetric absorption spectroscopy. Optical absorption in the quantum dots leads to a sample heating by charge-carrier relaxations, whereby non-radiative intersublevel transitions in the quantum dots are directly determined. The effects observed thereby are explained by different charge-carrier occupation, Pauli blocking, and many-=particle effects in the quantum dots. Furthermore intermediate-infrared emission from quantum dots is spectroscopically studied both under optical and electrical excitation. Each according to the structure of the waveguides in the samples emission peaks are shown, the intensity of which grows either sublinearly with the excitation power and finally saturates or exhibits a significantly superlinear growth. Simulations of an intermediate-infrared quantum-dot laser, which regard also the simultaneous intermediate-infrared emission, show that the observed superlinear growth is to be explained by intersublevel emission in the laser mode. The principal feasibility of a bipolar two-colour laser, which emits in the near- and in the intermediate infrared, is shown by this

Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

International Nuclear Information System (INIS)

Eliseev, P G; Li, H; Liu, G T; Stintz, A; Newell, T C; Lester, L E; Malloy, K J

2000-01-01

The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold at room temperature was about 13 A cm -2 . A theoretical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be ∼7 x 10 -15 cm -2 . (lasers)

Electron Spin Optical Orientation in Charged Quantum Dots

Science.gov (United States)

Shabaev, A.; Gershoni, D.; Korenev, V. L.

2005-03-01

We present a theory of nonresonant optical orientation of electron spins localized in quantum dots. This theory explains the negative circularly polarized photoluminescence of singlet trions localized in quantum dots previously observed in experiments where trion polarization changed to negative with time and where the degree of the negative polarization increased with intensity of pumping light. We have shown that this effect can be explained by the accumulation of dark excitons that occurs due to the spin blocking of the singlet trion formation - the major mechanism of dark exciton recombination. The accumulation of dark excitons results from a lack of electrons with a spin matching the exciton polarization. The electron spin lifetime is shortened by a transverse magnetic field or a temperature increase. This takes the block off the dark exciton recombination and restores the positive degree of trion polarization. The presented theory gives good agreement with experimental data.

Decision making based on optical excitation transfer via near-field interactions between quantum dots

International Nuclear Information System (INIS)

Naruse, Makoto; Nomura, Wataru; Ohtsu, Motoichi; Aono, Masashi; Sonnefraud, Yannick; Drezet, Aurélien; Huant, Serge; Kim, Song-Ju

2014-01-01

Optical near-field interactions between nanostructured matters, such as quantum dots, result in unidirectional optical excitation transfer when energy dissipation is induced. This results in versatile spatiotemporal dynamics of the optical excitation, which can be controlled by engineering the dissipation processes and exploited to realize intelligent capabilities such as solution searching and decision making. Here, we experimentally demonstrate the ability to solve a decision making problem on the basis of optical excitation transfer via near-field interactions by using colloidal quantum dots of different sizes, formed on a geometry-controlled substrate. We characterize the energy transfer behavior due to multiple control light patterns and experimentally demonstrate the ability to solve the multi-armed bandit problem. Our work makes a decisive step towards the practical design of nanophotonic systems capable of efficient decision making, one of the most important intellectual attributes of the human brain.

Decision making based on optical excitation transfer via near-field interactions between quantum dots

Energy Technology Data Exchange (ETDEWEB)

Naruse, Makoto, E-mail: naruse@nict.go.jp [Photonic Network Research Institute, National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795 (Japan); Nomura, Wataru; Ohtsu, Motoichi [Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Aono, Masashi [Earth-Life Science Institute, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguru-ku, Tokyo 152-8550 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012 (Japan); Sonnefraud, Yannick; Drezet, Aurélien; Huant, Serge [Université Grenoble Alpes, Inst. NEEL, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Kim, Song-Ju [WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-21

Optical near-field interactions between nanostructured matters, such as quantum dots, result in unidirectional optical excitation transfer when energy dissipation is induced. This results in versatile spatiotemporal dynamics of the optical excitation, which can be controlled by engineering the dissipation processes and exploited to realize intelligent capabilities such as solution searching and decision making. Here, we experimentally demonstrate the ability to solve a decision making problem on the basis of optical excitation transfer via near-field interactions by using colloidal quantum dots of different sizes, formed on a geometry-controlled substrate. We characterize the energy transfer behavior due to multiple control light patterns and experimentally demonstrate the ability to solve the multi-armed bandit problem. Our work makes a decisive step towards the practical design of nanophotonic systems capable of efficient decision making, one of the most important intellectual attributes of the human brain.

Reinventing Entrepreneurial History

DEFF Research Database (Denmark)

Wadhwani, R. Daniel; Lubinski, Christina

2017-01-01

Research on entrepreneurship remains fragmented in business history. A lack of conceptual clarity inhibits comparisons between studies and dialogue among scholars. To address these issues, we propose to reinvent entrepreneurial history as a research field. We define “new entrepreneurial history...... and reconfiguring resources, and legitimizing novelty. The article elaborates on the historiography, premises, and potential contributions of new entrepreneurial history....

Strain effects on the optical parameters of quantum dots nanocrystals employed in biomedical applications

International Nuclear Information System (INIS)

Liaparinos, P.F.

2014-01-01

The purpose of this study was to perform the influence of the strain (lattice and radius) effects on the optical parameters of nanocrystals for use in medical imaging instrumentation technology. The present manuscript involved (a) quantum dots (QD) based nanophosphors with particle size 3–5 nm in diameter, (b) dielectric constants (core) of nanophosphors in the range 2–4, and (c) the whole portion of the electromagnetic spectrum visible to the human eye, 400–700 nm. Lattice strain effects on the optical properties were evaluated by the modification of the bulk dielectric function using a Drude–Sommerfeld model for the free or conduction electrons, and a core term representing the bound electrons. The Mie scattering theory, was used to predict the shifted optical parameters. Results showed that (i) lattice stain reduces the real part (n) of refractive index, (ii) the reduction of n becomes higher with the increase of ε core (ω) and (iii) no significant variations on n were observed under the variability of incident light wavelength (400–700 nm). Light wavelength was found to affect significantly the imaginary part (k) of the complex refractive index. In addition, the radius strain (i) decreases the light extinction coefficient, m ext , (ii) increases the anisotropy factor, g and (iii) increases the light absorption probability, p. However, in cases of ε core (ω)=2, radius strain of 5% seems to present slightly higher p values than the cases of radius strain 10%. The present investigation found that the modification on the optical parameters enhances the utilization of quantom-dots luminescent nanomaterial in optical diffusion studies with requirements of high sensitivity (such as nuclear medical imaging modalities) rather than of high light spatial resolution (such as X-ray projection medical imaging systems). -- Highlights: • The strain effects on the optical parameters of quantum dots were examined. • Light wavelength affects significantly the

LDRD final report on theory and exploration of quantum-dot optical nonlinearities and coherences

International Nuclear Information System (INIS)

Chow, Weng Wah

2008-01-01

A microscopic theory for investigating quantum-dot optical properties was developed. The theory incorporated advances on various aspects of quantum-dot physics developed at Sandia and elsewhere. Important components are a non-Markovian treatment of polarization dephasing due to carrier-carrier scattering (developed at Sandia) and a nonperturbative treatment within a polaron picture of the scattering of carriers by longitudinal-optical phonons (developed at Bremen University). A computer code was also developed that provides a detailed accounting of electronic structure influences and a consistent treatment of many-body effects, the latter via the incorporation of results from the microscopic theory. This code was used to explore quantum coherence physics in a quantum-dot system. The investigation furthers the understanding of the underlying differences between atomic quantum coherence and semiconductor quantum coherence, and helps improve the potential of using quantum coherences in quantum computing, coherent control and high-resolution spectroscopy

Magnetic and magneto-optical properties of CdS:Mn quantum dots in PVA matrix

International Nuclear Information System (INIS)

Fediv, V I; Savchuk, A I; Frasunyak, V M; Makoviy, V V; Savchuk, O A

2010-01-01

We have studied the magnetic and magneto-optical properties of CdS:Mn quantum dots in polyvinyl alcohol matrix synthesized by co-precipitation method. The size of quantum dots was estimated by means of absorption spectroscopy. The results of measurements of magnetic susceptibility as a function of temperature and spectral dependence of the Faraday rotation of CdS:Mn quantum dots / polyvinyl alcohol composites are presented. In this work magnetic susceptibility was investigated by Faraday's method at the temperatures of (78-300) K in magnetic fields of (0.05-0.8) T. The inverse magnetic susceptibility as a function of temperature follows a Curie Weiss law. Formation of ferromagnetic coupling between magnetic ions is supposed. Magneto-optical Faraday rotation has been investigated in the wavelength region (400-700) nm at temperature 300 K in a magnetic field up to 5 T. Sign of the Verdet constant is found to be negative.

Electron-related linear and nonlinear optical responses in vertically coupled triangular quantum dots

International Nuclear Information System (INIS)

Martínez-Orozco, J.C.; Mora-Ramos, M.E.; Duque, C.A.

2014-01-01

The conduction band states of GaAs-based vertically coupled double triangular quantum dots in two dimensions are investigated within the effective mass and parabolic approximation, using a diagonalization procedure to solve the corresponding Schrödinger-like equation. The effect of an externally applied static electric field is included in the calculation, and the variation of the lowest confined energy levels as a result of the change of the field strength is reported for different geometrical setups. The linear and nonlinear optical absorptions and the relative change of the refractive index, associated with the energy transition between the ground and the first excited state in the system, are studied as a function of the incident light frequency for distinct configurations of inter-dot distance and electric field intensities. The blueshift of the resonant absorption peaks is detected as a consequence of the increment in the field intensity, whereas the opposite effect is obtained from the increase of inter-dot vertical distance. It is also shown that for large enough values of the electric field there is a quenching of the optical absorption due to field-induced change of symmetry of the first excited state wavefunction, in the case of triangular dots of equal shape and size

Electron-related linear and nonlinear optical responses in vertically coupled triangular quantum dots

Energy Technology Data Exchange (ETDEWEB)

Martínez-Orozco, J.C. [Unidad Académica de Física. Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060. Zacatecas, Zac. (Mexico); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

2014-11-01

The conduction band states of GaAs-based vertically coupled double triangular quantum dots in two dimensions are investigated within the effective mass and parabolic approximation, using a diagonalization procedure to solve the corresponding Schrödinger-like equation. The effect of an externally applied static electric field is included in the calculation, and the variation of the lowest confined energy levels as a result of the change of the field strength is reported for different geometrical setups. The linear and nonlinear optical absorptions and the relative change of the refractive index, associated with the energy transition between the ground and the first excited state in the system, are studied as a function of the incident light frequency for distinct configurations of inter-dot distance and electric field intensities. The blueshift of the resonant absorption peaks is detected as a consequence of the increment in the field intensity, whereas the opposite effect is obtained from the increase of inter-dot vertical distance. It is also shown that for large enough values of the electric field there is a quenching of the optical absorption due to field-induced change of symmetry of the first excited state wavefunction, in the case of triangular dots of equal shape and size.

Magneto-optical response of layers of semiconductor quantum dots and nanorings

NARCIS (Netherlands)

Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

2005-01-01

In this paper a comparative theoretical study was made of the magneto-optical response of square lattices of nanoobjects (dots and rings). Expressions for both the polarizability of the individual objects as their mutual electromagnetic interactions (for a lattice in vacuum) was derived. The

Influence of ablation wavelength and time on optical properties of laser ablated carbon dots

Science.gov (United States)

Isnaeni, Hanna, M. Yusrul; Pambudi, A. A.; Murdaka, F. H.

2017-01-01

Carbon dots, which are unique and applicable materials, have been produced using many techniques. In this work, we have fabricated carbon dots made of coconut fiber using laser ablation technique. The purpose of this work is to evaluate two ablation parameters, which are ablation wavelength and ablation time. We used pulsed laser from Nd:YAG laser with emit wavelength at 355 nm, 532 nm and 1064 nm. We varied ablation time one hour and two hours. Photoluminescence and time-resolved photoluminescence setup were used to study the optical properties of fabricated carbon dots. In general, fabricated carbon dots emit bluish green color emission upon excitation by blue laser. We found that carbon dots fabricated using 1064 nm laser produced the highest carbon dots emission among other samples. The peak wavelength of carbon dots emission is between 495 nm until 505 nm, which gives bluish green color emission. Two hours fabricated carbon dots gave four times higher emission than one hour fabricated carbon dot. More emission intensity of carbon dots means more carbon dots nanoparticles were fabricated during laser ablation process. In addition, we also measured electron dynamics of carbon dots using time-resolved photoluminescence. We found that sample with higher emission has longer electron decay time. Our finding gives optimum condition of carbon dots fabrication from coconut fiber using laser ablation technique. Moreover, fabricated carbon dots are non-toxic nanoparticles that can be applied for health, bio-tagging and medical applications.

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Energy Technology Data Exchange (ETDEWEB)

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Pulse-amplitude modulation of optical injection-locked quantum-dot lasers

Science.gov (United States)

Zhou, Yue-Guang; Wang, Cheng

2018-02-01

This work theoretically investigates the four-level pulse-amplitude modulation characteristics of quantum dot lasers subject to optical injection. The rate equation model takes into account carrier dynamics in the carrier reservoir, in the excited state, and in the ground state, as well as photon dynamics and phase dynamics of the electric field. It is found that the optical injection significantly improves the eye diagram quality through suppressing the relaxation oscillation, while the extinction ratio is reduced as well. In addition, both the adiabatic chirp and the transient chirp of the signal are substantially suppressed.

Controllable delay of ultrashort pulses in a quantum dot optical amplifier

DEFF Research Database (Denmark)

Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

2005-01-01

Optical and electrical tuning of the propagation time of 170 fs pulses in a quantum dot semiconductor amplifier at room temperature is demonstrated. Both pulse slowdown and advancement is possible and we achieve fractional delays (delay divided with pulse duration) of up to 40%. The results...

Quantum optics with quantum dots in photonic nanowires

DEFF Research Database (Denmark)

Claudon, Julien; Munsch, Matthieu; Bleuse, Joel

2012-01-01

Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....

All-Optical Wavelength Conversion by Picosecond Burst Absorption in Colloidal PbS Quantum Dots.

Science.gov (United States)

Geiregat, Pieter; Houtepen, Arjan J; Van Thourhout, Dries; Hens, Zeger

2016-01-26

All-optical approaches to change the wavelength of a data signal are considered more energy- and cost-effective than current wavelength conversion schemes that rely on back and forth switching between the electrical and optical domains. However, the lack of cost-effective materials with sufficiently adequate optoelectronic properties hampers the development of this so-called all-optical wavelength conversion. Here, we show that the interplay between intraband and band gap absorption in colloidal quantum dots leads to a very strong and ultrafast modulation of the light absorption after photoexcitation in which slow components linked to exciton recombination are eliminated. This approach enables all-optical wavelength conversion at rates matching state-of-the-art convertors in speed, yet with cost-effective solution-processable materials. Moreover, the stronger light-matter interaction allows for implementation in small-footprint devices with low switching energies. Being a generic property, the demonstrated effect opens a pathway toward low-power integrated photonics based on colloidal quantum dots as the enabling material.

Nonlinear optical properties of a three-electron quantum dot with account of the Rashba spin-orbit interaction

Energy Technology Data Exchange (ETDEWEB)

Hassanabadi, Hassan, E-mail: h.hasanabadi@shahroodut.ac.ir [Physics Department, Shahrood University of Technology, P.O. Box 3619995161-316, Shahrood (Iran, Islamic Republic of); Rahimov, Hamed [Physics Department, Shahrood University of Technology, P.O. Box 3619995161-316, Shahrood (Iran, Islamic Republic of); Lu Liangliang [Department of Physics, College of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006 (China); Wang Chao [Institute of Public Administration, Guangzhou University, Guangzhou 510006 (China)

2012-05-15

In this study, a detailed investigation of the nonlinear optical properties such as optical absorption and refractive index change associated with intersubband transitions in a three-electron quantum dot in two dimensions in the presence of the Rashba spin-orbit interaction has been carried out. We present the exact wave functions and energy levels of the system. Numerical results on typical GaAs/AlGaAs materials show that the decrease of the quantum dot radius blueshifts and amplifies the absorption coefficients as well as the refractive index changes, as expected. Additionally, an increase of the optical intensity and relaxation time considerably changes the absorption coefficients and the refractive index changes. - Highlights: Black-Right-Pointing-Pointer We consider a three-electron quantum dot in 2D in the presence of the Rashba spin-orbit interaction. Black-Right-Pointing-Pointer We present the exact wave functions and energy levels of the system. Black-Right-Pointing-Pointer We apply this model for GaAs/AlGaAs materials. Black-Right-Pointing-Pointer The detailed nonlinear optical properties have been investigated.

320-to-40-Gb/s optical demultiplexing using four-wave mixing in a quantum-dot soa

NARCIS (Netherlands)

Matsuura, M.; Gomez-Agis, F.; Calabretta, N.; Raz, O.; Dorren, H.J.S.

2012-01-01

We report, for the first time, the optical demultiplexing of a 320-Gb/s intensity-modulated signal using four-wave mixing in a quantum-dot semiconductor optical amplifier. Error-free operations were successfully achieved for all the 40-Gb/s channels extracted by the optical demultiplexer.

Optical transitions and nature of Stokes shift in spherical CdS quantum dots

OpenAIRE

Demchenko, D. O.; Wang, Lin-Wang

2006-01-01

We study the structure of the energy spectra along with the character of the states participating in optical transitions in colloidal CdS quantum dots (QDs) using the {\\sl ab initio} accuracy charge patching method combined with the %pseudopotential based folded spectrum calculations of electronic structure of thousand-atom nanostructures. In particular, attention is paid to the nature of the large resonant Stokes shift observed in CdS quantum dots. We find that the top of the valence band st...

Stability of optically injected two-state quantum-dot lasers

Energy Technology Data Exchange (ETDEWEB)

Meinecke, Stefan; Lingnau, Benjamin; Roehm, Andre; Luedge, Kathy [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany)

2017-12-15

Simultaneous two-state lasing is a unique property of semiconductor quantum-dot (QD) lasers. This not only changes steady-state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single-state laser devices, we find a strong suppression of dynamical instabilities in two-state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all-optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Stability of optically injected two-state quantum-dot lasers

International Nuclear Information System (INIS)

Meinecke, Stefan; Lingnau, Benjamin; Roehm, Andre; Luedge, Kathy

2017-01-01

Simultaneous two-state lasing is a unique property of semiconductor quantum-dot (QD) lasers. This not only changes steady-state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single-state laser devices, we find a strong suppression of dynamical instabilities in two-state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all-optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

Energy Technology Data Exchange (ETDEWEB)

Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

2014-03-24

We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

Symmetric analysis, categorization, and optical spectrum of ideal pyramid quantum dots

Science.gov (United States)

Li, Wei; Belling, Samuel W.

2017-11-01

Self-assembled quantum dots possess an intrinsic geometric symmetry. Applying group representation theory, we systematically analyze the symmetric properties of the bound states for ideal pyramid quantum dots, which neglect band mixing and strain effects. We label each bound state by its symmetry group’s corresponding irreducible representation and define a concept called the quantum dots’ symmetry category. A class of quantum dots with the same irreducible representation sequence of bound states are characterized as belonging to a specific symmetry category. This category concept generally describes the symmetric order of Hilbert space or wavefunction space. We clearly identify the connection between the symmetry category and the geometry of quantum dots by the symmetry category graph or map. The symmetry category change or transition corresponds to an accidental degeneracy of the bound states. The symmetry category and category transition are observable from the photocurrent spectroscopy or optical spectrum. For simplicity’s sake, in this paper, we only focus on inter-subband transition spectra, but the methodology can be extended to the inter-band transition cases. We predict that from the spectral measurements, the quantum dots’ geometric information may be inversely extracted.

Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

NARCIS (Netherlands)

Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

2007-01-01

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

78 FR 32637 - Science and Technology Reinvention Laboratory Personnel Management Demonstration Project...

Science.gov (United States)

2013-05-31

..., Science and Technology Reinvention Laboratory Personnel Management Demonstration Project, Department of... DEPARTMENT OF DEFENSE Office of the Secretary Science and Technology Reinvention Laboratory Personnel Management Demonstration Project, Department of the Army, Army Research, Development and...

Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center

Energy Technology Data Exchange (ETDEWEB)

Hoyos, Jaime H. [Departamento de Ciencias Básicas, Universidad de Medellín, Cra. 87 No. 30-65, Medellín (Colombia); Correa, J.D., E-mail: jcorrea@udem.edu.co [Departamento de Ciencias Básicas, Universidad de Medellín, Cra. 87 No. 30-65, Medellín (Colombia); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

2016-03-01

We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quantum dot. For this purpose, we consider Coulomb interactions between electrons and an impurity ionized donor atom. The electron-donor-impurity spectrum and the associated quantum states are calculated using the effective mass approximation with a parabolic potential energy model describing both the radial and axial electron confinement. We also include the effects of the hydrostatic pressure and external electrostatic fields. The energy spectrum is obtained through an expansion of the eigenstates as a linear combination of Gaussian-type functions which reduces the computational effort since all the matrix elements are obtained analytically. Therefore, the numerical problem is reduced to the direct diagonalization of the Hamiltonian. The obtained energies are used in the evaluation of the dielectric susceptibility and the nonlinear optical absorption coefficient within a modified two-level approach in a rotating wave approximation. This quantity is investigated as a function of the quantum dot dimensions, the impurity position, the external electric field intensity and the hydrostatic pressure. The results of this research could be important in the design and fabrication of zincblende GaN-quantum-dot-based electro-optical devices.

Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center

International Nuclear Information System (INIS)

Hoyos, Jaime H.; Correa, J.D.; Mora-Ramos, M.E.; Duque, C.A.

2016-01-01

We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quantum dot. For this purpose, we consider Coulomb interactions between electrons and an impurity ionized donor atom. The electron-donor-impurity spectrum and the associated quantum states are calculated using the effective mass approximation with a parabolic potential energy model describing both the radial and axial electron confinement. We also include the effects of the hydrostatic pressure and external electrostatic fields. The energy spectrum is obtained through an expansion of the eigenstates as a linear combination of Gaussian-type functions which reduces the computational effort since all the matrix elements are obtained analytically. Therefore, the numerical problem is reduced to the direct diagonalization of the Hamiltonian. The obtained energies are used in the evaluation of the dielectric susceptibility and the nonlinear optical absorption coefficient within a modified two-level approach in a rotating wave approximation. This quantity is investigated as a function of the quantum dot dimensions, the impurity position, the external electric field intensity and the hydrostatic pressure. The results of this research could be important in the design and fabrication of zincblende GaN-quantum-dot-based electro-optical devices.

Reinventing classics: the hidden design strategies of renowned chefs

OpenAIRE

Agogué , Marine; Hatchuel , Armand

2015-01-01

International audience; Reinventing classics is a well-used yet complex design pattern. Indeed, a reinterpreted classic needs to relate to the original object while simultaneously challenging the initial model and providing a new and fresh look to the well established classic. However, this design strategy remains understudied, and we aimed to contribute to the literature by addressing the lack of theoretical models for reinventing classics. Reinterpreting tradition is a key process for chefs...

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Science.gov (United States)

Shen, Jian Qi; Gu, Jing

2018-04-01

Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level Λ-configuration model { |0> ,|1> ,|2> } , i.e., the ground state of the molecule is the lower level |0> and the highly degenerate electronic states in the two quantum dots are the two upper levels |1> ,|2> . The electromagnetic characteristics due to the |0>-|1> transition can be controllably manipulated by a tunable gate voltage (control field) that drives the |2>-|1> transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., |0>-|1> two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

Science.gov (United States)

Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

2017-10-01

We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Validating atlas-guided DOT: a comparison of diffuse optical tomography informed by atlas and subject-specific anatomies.

Science.gov (United States)

Cooper, Robert J; Caffini, Matteo; Dubb, Jay; Fang, Qianqian; Custo, Anna; Tsuzuki, Daisuke; Fischl, Bruce; Wells, William; Dan, Ippeita; Boas, David A

2012-09-01

We describe the validation of an anatomical brain atlas approach to the analysis of diffuse optical tomography (DOT). Using MRI data from 32 subjects, we compare the diffuse optical images of simulated cortical activation reconstructed using a registered atlas with those obtained using a subject's true anatomy. The error in localization of the simulated cortical activations when using a registered atlas is due to a combination of imperfect registration, anatomical differences between atlas and subject anatomies and the localization error associated with diffuse optical image reconstruction. When using a subject-specific MRI, any localization error is due to diffuse optical image reconstruction only. In this study we determine that using a registered anatomical brain atlas results in an average localization error of approximately 18 mm in Euclidean space. The corresponding error when the subject's own MRI is employed is 9.1 mm. In general, the cost of using atlas-guided DOT in place of subject-specific MRI-guided DOT is a doubling of the localization error. Our results show that despite this increase in error, reasonable anatomical localization is achievable even in cases where the subject-specific anatomy is unavailable. Copyright © 2012 Elsevier Inc. All rights reserved.

Investigation of optical effects in silicon quantum dots by using an empirical pseudopotential method

Energy Technology Data Exchange (ETDEWEB)

Ghoshal, S. K.; Sahar, M. R.; Rohani, M. S. [Universiti Teknologi Malaysia, Johor (Malaysia)

2011-02-15

A computer simulation using a pseudopotential approach has been carried out to investigate the band gap as a function of the size and the shape of small silicon (Si) dots having 3 to 44 atoms per dot with and without surface passivation. We used an empirical pseudo-potential Hamiltonian, a plane-wave basis expansion and a basic tetrahedral structure with undistorted local bonding configurations. In our simulation, the structures of the quantum dots were relaxed and optimized before and after passivation. We found that the gap increased more for an oxygenated surface than a hydrogenated one. Thus, both quantum confinement and surface passivation determined the optical and the electronic properties of Si quantum dots. Visible luminescence was probably due to radiative recombination of electrons and holes in the quantum-confined nanostructures. The effect of passivation of the surface dangling bonds by hydrogen and oxygen atoms and the role of surface states on the gap energy was also examined. We investigated the entire energy spectrum starting from the very low-lying ground state to the very high-lying excited states. The results for the sizes of the gap, the density of states, the oscillator strength and the absorption coefficient as functions of the size are presented. The importance of the confinement and the role of surface passivation on the optical effects are also discussed.

Assessment of Department of Defense Reinvention Laboratories

National Research Council Canada - National Science Library

Gosnell, James

1997-01-01

.... Key leadership practices instrumental to successfully achieving reinvention goals include creating total commitment and a sense of urgency, communicating a vision, establishing clear goals and plan...

Influence of hydrogen peroxide on the stability and optical properties of CdS quantum dots in gelatin

Energy Technology Data Exchange (ETDEWEB)

Klyuev, V.G.; Volykhin, D.V., E-mail: volykhin.d@ya.ru; Ivanova, A.A.

2017-03-15

Influence of hydrogen peroxide on the stability and optical characteristics of CdS quantum dots obtained by aqueous synthesis in gelatin is investigated. It is shown that the action of hydrogen peroxide on the CdS quantum dots reduces the average particle size, increases monodispersity of particle size distribution, and also increases the photoluminescence intensity. A model that explains the behavior of CdS quantum dots photoluminescence with a decrease of particle size as a result of treatment with hydrogen peroxide is presented.

Hydrostatic pressure effects on the state density and optical transitions in quantum dots

International Nuclear Information System (INIS)

Galindez-Ramirez, G; Perez-Merchancano, S T; Paredes Gutierrez, H; Gonzalez, J D

2010-01-01

Using the effective mass approximation and variational method we have computed the effects of hydrostatic pressure on the absorption and photoluminescence spectra in spherical quantum dot GaAs-(Ga, Al) As, considering a finite confinement potential of this particular work we show the optical transitions in quantum of various sizes in the presence of hydrogenic impurities and hydrostatic pressure effects. Our first result describes the spectrum of optical absorption of 500 A QD for different values of hydrostatic pressure P = 0, 20 and 40 Kbar. The absorption peaks are sensitive to the displacement of the impurity center to the edge of the quantum dot and even more when the hydrostatic pressure changes in both cases showing that to the extent that these two effects are stronger quantum dots respond more efficiently. Also this result can be seen in the study of the photoluminescence spectrum as in the case of acceptor impurities consider them more efficiently capture carriers or electrons that pass from the conduction band to the valence band. Density states with randomly distributed impurity show that the additional peaks in the curves of the density of impurity states appear due to the presence of the additional hydrostatic pressure effects.

Spin storage in quantum dot ensembles and single quantum dots

International Nuclear Information System (INIS)

Heiss, Dominik

2009-01-01

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

Spin storage in quantum dot ensembles and single quantum dots

Energy Technology Data Exchange (ETDEWEB)

Heiss, Dominik

2009-10-15

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

Optical Resonance of A Three-Level System in Semiconductor Quantum Dots

Directory of Open Access Journals (Sweden)

Nguyen Van Hieu

2017-11-01

Full Text Available The optical resonance of a three-level system of the strongly correlated electrons in the twolevel semiconductor quantum dot interacting with the linearly polarized monochromatic electromagnetic radiation is studied. With the application of the Green function method the expressions of the state vectors and the energies of the stationary states of the system in the regime of the optical resonance are derived. The Rabi oscillations of the electron populations at different levels as well as the Rabi splitting of the peaks in the photon emission spectra are investigated. PACS numbers: 71.35.-y, 78.55.-m, 78.67.Hc

Optical techniques for probing the excited state dynamics of quantum dot solids

Energy Technology Data Exchange (ETDEWEB)

Moroz, P.; Kholmicheva, N.; Razgoniaeva, N. [Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43402 (United States); Department of Physics, Bowling Green State University, Bowling Green, OH 43402 (United States); Burchfield, D. [Department of Chemistry, Bowling Green State University, Bowling Green, OH 43402 (United States); Sharma, N.; Acharya, A. [Department of Physics, Bowling Green State University, Bowling Green, OH 43402 (United States); Zamkov, M., E-mail: zamkovm@bgsu.edu [Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43402 (United States); Department of Physics, Bowling Green State University, Bowling Green, OH 43402 (United States)

2016-06-01

Highlights: • Optical techniques represent a powerful tool for probing exciton diffusion in QD solids. • Exciton dissociation in QD solids is caused by charge tunneling to traps and other dots. • Exciton and free-carrier lifetimes are given by fast and slow components of PL decay. • Surface PL offers valuable information on the type and density of traps in QD solids. - Abstract: Quantum dot (QD) solids represent an important class of functional materials that holds strong promise for future applications in technology. Their optoelectronic properties are determined by energy diffusion processes, which character can often be inferred from the temporal and spectral analysis of the film’s photoluminescence (PL). Here, optical techniques based on PL lifetime, bulk quenching, and temperature-dependent PL will be discussed. These techniques complement the electrical conductivity measurements by mapping the flow of optically induced excitons through undepleted, contact-free films with an unprecedented temporal and spatial resolution. By correlating the QD solid morphology with the ensuing photoluminescence (PL) dynamics, these methods allow estimating important transport characteristics, including exciton and charge carrier diffusion lengths, the rate of interparticle energy transfer, carrier mobility, and the exciton diffusivity. The review will cover most popular PL-based strategies and summarize the key experimental findings resulting from these works.

Optical levitation of a microdroplet containing a single quantum dot

Science.gov (United States)

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2015-03-01

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This paper presents the realization of an optically levitated solid-state quantum emitter. This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-40-6-906. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

Ultrafast atomic-scale visualization of acoustic phonons generated by optically excited quantum dots

Directory of Open Access Journals (Sweden)

Giovanni M. Vanacore

2017-07-01

Full Text Available Understanding the dynamics of atomic vibrations confined in quasi-zero dimensional systems is crucial from both a fundamental point-of-view and a technological perspective. Using ultrafast electron diffraction, we monitored the lattice dynamics of GaAs quantum dots—grown by Droplet Epitaxy on AlGaAs—with sub-picosecond and sub-picometer resolutions. An ultrafast laser pulse nearly resonantly excites a confined exciton, which efficiently couples to high-energy acoustic phonons through the deformation potential mechanism. The transient behavior of the measured diffraction pattern reveals the nonequilibrium phonon dynamics both within the dots and in the region surrounding them. The experimental results are interpreted within the theoretical framework of a non-Markovian decoherence, according to which the optical excitation creates a localized polaron within the dot and a travelling phonon wavepacket that leaves the dot at the speed of sound. These findings indicate that integration of a phononic emitter in opto-electronic devices based on quantum dots for controlled communication processes can be fundamentally feasible.

Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

Energy Technology Data Exchange (ETDEWEB)

Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

2010-07-01

We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

Energy Technology Data Exchange (ETDEWEB)

Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

2011-07-01

Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

Electronic properties and optical absorption of a phosphorene quantum dot

Science.gov (United States)

Liang, F. X.; Ren, Y. H.; Zhang, X. D.; Jiang, Z. T.

2018-03-01

Using the tight-binding Hamiltonian approach, we theoretically study the electronic and optical properties of a triangular phosphorene quantum dot (PQD) including one normal zigzag edge and two skewed armchair edges (ZAA-PQD). It is shown that the energy spectrum can be classified into the filled band (FB), the zero-energy band (ZB), and the unfilled band (UB). Numerical calculations of the FB, ZB, and UB probability distributions show that the FB and the UB correspond to the bulk states, while the ZB corresponds to the edge states, which appear on all of the three edges of the ZAA-PQD sharply different from the other PQDs. We also find that the strains and the electric fields can affect the energy levels inhomogeneously. Then the optical properties of the ZAA-PQD are investigated. There appear some strong low-energy optical absorption peaks indicating its sensitive low-energy optical response that is absent in other PQDs. Moreover, the strains and the electric fields can make inhomogeneous influences on the optical spectrum of the ZAA-PQD. This work may provide a useful reference for designing the electrical, mechanical, and optical PQD devices.

InP based lasers and optical amplifiers with wire-/dot-like active regions

DEFF Research Database (Denmark)

Reithmaier, J. P.; Somers, A.; Deubert, S.

2005-01-01

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

The nonlinear optical properties of a magneto-exciton in a strained Ga0.2In0.8As/GaAs quantum dot

International Nuclear Information System (INIS)

Kumar, N. R. Senthil; Peter, A. John; Yoo Chang Kyoo

2013-01-01

The magnetic field-dependent heavy hole excitonic states in a strained Ga 0.2 In 0.8 As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga 0.2 In 0.8 As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga 0.2 In 0.8 As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Royal Jelling: Danish National Heritage Reinvented

DEFF Research Database (Denmark)

Jensen, Mette Bjerrum

2009-01-01

Nations are constructions. They are founded on generally accepted ideas that a certain group of people can claim their rights to a certain geographical area. These claims are often made with reference to history. The field of archaeology can play a significant role in this invention and reinvention...... of nation states because archaeology is based on the interpretation of often ambiguous prehistoric source material, and can therefore be easily adjusted to the intended story. This paper suggests that the main role of the prehistoric World Heritage site of Jelling in Denmark has been to invent and reinvent...... the myth of Denmark as a united, homogeneous, Christian kingdom that has existed for more than a thousand years, establishing an ideal frame for a national unity. Living in late-modern times with globalized identities, we might raise the question of whether the time has come for archaeologists to invent...

Quantum optics with single quantum dot devices

International Nuclear Information System (INIS)

Zwiller, Valery; Aichele, Thomas; Benson, Oliver

2004-01-01

A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots

Optical-absorption spectra associated with shallow donor impurities in GaAs-(Ga,Al)As quantum-dots

International Nuclear Information System (INIS)

Silva Valencia, J.

1995-08-01

The binding energy of a hydrogenic donor impurity and the optical-absorption spectra associated with transitions between the n=1 valence level and the donor-impurity band were calculated for infinite barrier-well spherical GaAs-(Ga,Al)As quantum-dots of different radii, using the effective mass approximation within a variational scheme. An absorption peak associated with transitions involving impurities at the center of the well and a peak related with impurities at the edge of the dot were the main features observed for the different radii of the dots considered in the calculations. Also as a result of the higher electronic confinement in a quantum- dot, we found a much wider energy range of the absorption spectra when compared to infinite GaAs-(Ga,Al)As quantum-wells and quantum-well wires of width and diameter comparable to the diameter of the quantum dot. (author). 13 refs, 3 figs

Wave function analysis of type-II self-assembled quantum dot structures using magneto-optics

International Nuclear Information System (INIS)

Godoy, Marcio Peron Franco de; Nakaema, Marcelo K.K.; Gomes, Paulo F.; Iikawa, Fernando; Brasil, Maria Jose S.P.; Bortoleto, Jose Roberto R.; Cotta, Monica A.; Ribeiro, Evaldo; Medeiros-Ribeiro, Gilberto; Marques, Gilmar E.; Bittencourt, A.C.R.

2004-01-01

Full text: Recently, self-assembled quantum dots have attracted considerable attention for their potential for device applications. Type II interface, in particular, present interesting properties due to the space separation of the carriers. One of the carriers is confined at the lower band gap layer and the other remains at the barrier layers and is only localized by the Coulomb attraction. An essential information for using type II quantum wells and quantum dots on technological applications is the localization of the carrier wave function, which is an experimentally difficult parameter to be measured. Some techniques have been proposed to map the wave functions in quantum dots such as magneto-tunneling spectroscopy and near- field scanning optical microscopy. These techniques involve however a very complex experimental apparatus and sample processing. The magneto-exciton transition can be used as an alternative tool to investigate the exciton wave function distribution, since this distribution has a strong influence on the diamagnetic shift and Zeeman splitting. In this work, we present magneto-optical studies of In P/GaAs type II self-assembled quantum dots, where the electron is strongly confined at the In P, while the hole is weakly localized at the GaAs barrier due to the Coulombic attraction from the electrons. This scenery is very distinct from type I systems. The weaker hole confinement should alter the valence band mixing resulting in a different valence band contribution on the Zeeman splitting as compared to type I systems. Based on the results of the magneto-exciton emission from the wetting layer and from the individual dots, we obtained interesting results concerning the wave function distribution in our system. We discuss the localization of the hole wave function along the growth direction based on the measured Zeeman splitting and the in-plane wave function distribution, based on the observed diamagnetic shift. A remarkable result is that the

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

DEFF Research Database (Denmark)

Fiore, A.; Borri, Paola; Langbein, Wolfgang

2000-01-01

We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time...

Size-dependent optical properties of colloidal PbS quantum dots.

Science.gov (United States)

Moreels, Iwan; Lambert, Karel; Smeets, Dries; De Muynck, David; Nollet, Tom; Martins, José C; Vanhaecke, Frank; Vantomme, André; Delerue, Christophe; Allan, Guy; Hens, Zeger

2009-10-27

We quantitatively investigate the size-dependent optical properties of colloidal PbS nanocrystals or quantum dots (Qdots), by combining the Qdot absorbance spectra with detailed elemental analysis of the Qdot suspensions. At high energies, the molar extinction coefficient epsilon increases with the Qdot volume d(3) and agrees with theoretical calculations using the Maxwell-Garnett effective medium theory and bulk values for the Qdot dielectric function. This demonstrates that quantum confinement has no influence on epsilon in this spectral range, and it provides an accurate method to calculate the Qdot concentration. Around the band gap, epsilon only increases with d(1.3), and values are comparable to the epsilon of PbSe Qdots. The data are related to the oscillator strength f(if) of the band gap transition and results agree well with theoretical tight-binding calculations, predicting a linear dependence of f(if) on d. For both PbS and PbSe Qdots, the exciton lifetime tau is calculated from f(if). We find values ranging between 1 and 3 mus, in agreement with experimental literature data from time-resolved luminescence spectroscopy. Our results provide a thorough general framework to calculate and understand the optical properties of suspended colloidal quantum dots. Most importantly, it highlights the significance of the local field factor in these systems.

Efficient optical trapping of CdTe quantum dots by femtosecond laser pulses

KAUST Repository

Chiang, Weiyi

2014-12-11

The development in optical trapping and manipulation has been showing rapid progress, most of it is in the small particle sizes in nanometer scales, substituting the conventional continuous-wave lasers with high-repetition-rate ultrashort laser pulse train and nonlinear optical effects. Here, we evaluate two-photon absorption in optical trapping of 2.7 nm-sized CdTe quantum dots (QDs) with high-repetition-rate femtosecond pulse train by probing laser intensity dependence of both Rayleigh scattering image and the two-photon-induced luminescence spectrum of the optically trapped QDs. The Rayleigh scattering imaging indicates that the two-photon absorption (TPA) process enhances trapping ability of the QDs. Similarly, a nonlinear increase of the two-photon-induced luminescence with the incident laser intensity fairly indicates the existence of the TPA process.

Exploiting the optical and luminescence characteristic of quantum dots for optical device fabrication

Science.gov (United States)

Suriyaprakash, Jagadeesh; Qiao, Ting Ting

2018-02-01

One can design a robust optical device by engineering the optical band gap of the quantum dots (QDs) owing to their size-tunable quantum confinement effect. To do this, understanding the optical effects of QDs and composite materials is crucial. In this context, various sizes (2.8-4.2 nm) of CdSe QDs-PMMA nanocomposite are fabricated in a two-step process and their absorbance, luminescence and optical constants studied systematically. The ellipsometry spectroscopic analysis exhibits the heterogeneous medium feature of Ψ value and also the measured refractive index (1.51-1.59) values are increased with decreased band gap (2.24-2.10 eV). The observed red shift in the UV-Vis and photoluminescence spectra is indicative of early stage CdSe QD followed by a nucleation process of bigger size QD. In addition, the growth kinetics of the reaction and the band gap of the QDs are evaluated with respect to the time to testify the colloidal QDs formation. The thickness and QD composition of the nanocomposite thin films calculated by effective medium approximation are 100 nm and 8-12%, respectively. Morphology and structural feature transmission electron microscopy study of the fabricated nanocomposite demonstrated that spherical CdSe QDs are well dispersed in PMMA.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots

NARCIS (Netherlands)

Geiregat, Pieter; Houtepen, Arjan J.; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; Van Thourhout, Dries; Hens, Zeger

2017-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots

NARCIS (Netherlands)

Geiregat, P.A.; Houtepen, A.J.; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; Van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can

The inhibition of optical excitations and enhancement of Rabi flopping in hybrid quantum dot-metallic nanoparticle systems

International Nuclear Information System (INIS)

Sadeghi, S M

2009-01-01

We study the inhibition of optical excitation and enhancement of Rabi flopping and frequency in semiconductor quantum dots via plasmonic effects. This is done by demonstrating that the interaction of a quantum dot with a laser field in the vicinity of a metallic nanoparticle can be described in terms of optical Bloch equations with a plasmically normalized Rabi frequency. We show that in the weak-field regime plasmonic effects can suppress the interband transitions, inhibiting exciton generation. In the strong-field regime these effects delay the response of the quantum dot to the laser field and enhance Rabi flopping. We relate these to the conversion of Rabi frequency from a real quantity into a complex and strongly frequency-dependent quantity as plasmonic effects become significant. We show that, within the strong-field regime, in the wavelength range where real and imaginary parts of this frequency reach their maxima, a strongly frequency-dependent enhancement of carrier excitation can happen.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity

International Nuclear Information System (INIS)

Li Jinjin; Zhu Kadi

2011-01-01

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity.

Science.gov (United States)

Li, Jin-Jin; Zhu, Ka-Di

2011-02-04

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

Reinventing Material Science - Continuum Magazine | NREL

Science.gov (United States)

by Sandia National Laboratories Reinventing Material Science It's not often that scientists set out pursuing in the field of material science. The vision of the center is to revolutionize the discovery of new material science. "In the old days, if you wanted somebody to calculate the properties of a

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Directory of Open Access Journals (Sweden)

Heyn Ch

2009-01-01

Full Text Available Abstract Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

Synthesis and optical properties of core-multi-shell CdSe/CdS/ZnS quantum dots: Surface modifications

Science.gov (United States)

Ratnesh, R. K.; Mehata, Mohan Singh

2017-02-01

We report two port synthesis of CdSe/CdS/ZnS core-multi-shell quantum dots (Q-dots) and their structural properties. The multi-shell structures of Q-dots were developed by using successive ionic layer adsorption and reaction (SILAR) technique. The obtained Q-dots show high crystallinity with the step-wise adjustment of lattice parameters in the radial direction. The size of the core and core-shell Q-dots estimated by transmission electron microscopy images and absorption spectra is about 3.4 and 5.3 nm, respectively. The water soluble Q-dots (scheme-1) were prepared by using ligand exchange method, and the effect of pH was discussed regarding the variation of quantum yield (QY). The decrease of a lifetime of core-multi-shell Q-dots with respect to core CdSe indicates that the shell growth may be tuned by the lifetimes. Thus, the study clearly demonstrates that the core-shell approach can be used to substantially improve the optical properties of Q-dots desired for various applications.

Zeolite Y Films as Ideal Platform for Evaluation of Third-Order Nonlinear Optical Quantum Dots

Directory of Open Access Journals (Sweden)

Hyun Sung Kim

2016-01-01

Full Text Available Zeolites are ideal host material for generation and stabilization of regular ultrasmall quantum dots (QDs array with the size below 1.5 nm. Quantum dots (QDs with high density and extinction absorption coefficient have been expected to give high level of third-order nonlinear optical (3rd-NLO and to have great potential applications in optoelectronics. In this paper, we carried out a systematic elucidation of the third-order nonlinear optical response of various types of QDs including PbSe, PbS, CdSe, CdS, ZnSe, ZnS, Ag2Se, and Ag2S by manipulation of QDs into zeolites Y pores. In this respect, we could demonstrate that the zeolite offers an ideal platform for capability comparison 3rd-NLO response of various types of QDs with high sensitivities.

Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

DEFF Research Database (Denmark)

Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

2005-01-01

We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

Linear and nonlinear optical properties of a hydrogenic donor in lens-shaped quantum dots

International Nuclear Information System (INIS)

Vahdani, M.R.K.; Rezaei, G.

2009-01-01

Optical transitions in a Lens-Shaped Quantum Dot (LSD) are investigated in the presence of a hydrogenic impurity. The electronic wave functions are obtained analytically and the energy eigenvalues are calculated numerically. The density matrix formulation with the intersubband relaxation are used to evaluate the (linear and third order nonlinear) absorption coefficient (AC) and the change in the refractive indices (RI) analytically. The effect of the size of the LSD and optical intensity on the AC and RI are investigated. It is found that AC and RI are strongly affected by the optical intensity and the size of the LSD.

Linear and nonlinear optical properties of a hydrogenic donor in lens-shaped quantum dots

Energy Technology Data Exchange (ETDEWEB)

Vahdani, M.R.K. [Department of Physics, College of Sciences, Shiraz University, Shiraz 71454 (Iran, Islamic Republic of); Rezaei, G., E-mail: grezaei@mail.yu.ac.i [Department of Physics, College of Sciences, Yasouj University, Yasouj 75914 (Iran, Islamic Republic of)

2009-08-17

Optical transitions in a Lens-Shaped Quantum Dot (LSD) are investigated in the presence of a hydrogenic impurity. The electronic wave functions are obtained analytically and the energy eigenvalues are calculated numerically. The density matrix formulation with the intersubband relaxation are used to evaluate the (linear and third order nonlinear) absorption coefficient (AC) and the change in the refractive indices (RI) analytically. The effect of the size of the LSD and optical intensity on the AC and RI are investigated. It is found that AC and RI are strongly affected by the optical intensity and the size of the LSD.

Students' Guided Reinvention of Definition of Limit of a Sequence with Interactive Technology

Science.gov (United States)

Flores, Alfinio; Park, Jungeun

2016-01-01

In a course emphasizing interactive technology, 19 students, including 18 mathematics education majors, mostly in their first year, reinvented the definition of limit of a sequence while working in small cooperative groups. The class spent four sessions of 75 minutes each on a cyclical process of guided reinvention of the definition of limit of a…

Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.

Science.gov (United States)

Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin

2017-06-27

Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.

Optical and electronic properties of InGaAs and nitride quantum dots

Energy Technology Data Exchange (ETDEWEB)

Baer, N.

2006-06-15

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Optical and electronic properties of InGaAs and nitride quantum dots

International Nuclear Information System (INIS)

Baer, N.

2006-06-01

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots

International Nuclear Information System (INIS)

Niederbracht, H; Hargart, F; Schwartz, M; Koroknay, E; Kessler, C A; Jetter, M; Michler, P

2015-01-01

Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure. (paper)

Tellurium quantum dots: Preparation and optical properties

Science.gov (United States)

Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

2017-08-01

Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

Calculation of the Huang-Rhys parameter in spherical quantum dots: the optical deformation potential effect

International Nuclear Information System (INIS)

Hamma, M; Miranda, R P; Vasilevskiy, M I; Zorkani, I

2007-01-01

An accurate calculation of the exciton-phonon interaction matrix elements and Huang-Rhys parameter for nearly spherical nanocrystals (NCs) of polar semiconductor materials is presented. The theoretical approach is based on a continuum lattice dynamics model and the effective mass approximation for electronic states in the NCs. A strong confinement regime is considered for both excitons and optical phonons, taking into account both the Froehlich-type and optical deformation potential (ODP) mechanisms of the exciton-phonon interaction. The effects of exchange electron-hole interaction and possible hexagonal crystal structure of the underlying material are also taken into account. The theory is applied to CdSe and InP quantum dots. It is shown that the ODP mechanism, almost unimportant for CdSe, dominates the exciton-phonon coupling in small InP dots. The effect of the non-diagonal interaction, not included in the Huang-Rhys parameter, is briefly discussed

Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot

International Nuclear Information System (INIS)

Bouzaïene, L.; Ben Mahrsia, R.; Baira, M.; Sfaxi, L.; Maaref, H.

2013-01-01

We have performed theoretical calculation of the nonlinear optical rectification in a lens shape InAs/GaAs quantum dot (0D). The combined effects of hydrostatic pressure and temperature on the nonlinear optical rectification in lens-shaped InAs QDs are studied under the compact density matrix formalism and the effective mass approximation. From our calculation, it is found that the subband energies and optical rectification susceptibility are quite sensitive to the applied hydrostatic pressure and temperature. The results show that the resonant peak of the optical rectification can be red-shifted or blue-shifted and their intensity also varied by external probes such as hydrostatic pressure and temperature. In addition, the oscillator strength is strongly affected by these parameters. - Highlights: ► Theoretical calculation of the nonlinear optical rectification in a lens shape InAs/GaAs quantum dot was performed. ► Optical rectification susceptibility is quite sensitive to the applied hydrostatic pressure and temperature. ► The oscillator strength is strongly affected by the applied hydrostatic pressure and temperature.

Optical properties and the use of CdSe quantum dot for biolabeling applications

International Nuclear Information System (INIS)

Tran Hong Nhung; Nguyen Thi Van; Vu Xuan Hoa; Pham Minh Tan; Tong Kim Thuan; Tran Thi Thu Thuy; Jean Claude Brochon; Patrick Tauc

2008-01-01

The quantum dots CdSe type Qtracker 565 and 605 of Quantum Dot Company have been investigated by size, chemical structure and optical properties. The Qtracker 605 QDs were introduced into Lipomyces Starkeyi yeast cells. It was found that for the young cells (36 h of culture), the labeling QDs are mainly located in vacuoles, and the emission remains narrow with the maximum is clearly around 605 nm. For age cells (96 h of culture), the labeling QDs are concentrated in the cell cytoplasm, the emission is broaden with the maximum shifted to 580 nm. The live cell image was still observed after two months of introduction. The Qtracker 605 QDs were also successfully introduced into mouse blood cancerous cells. (author)

Graphene quantum dots prepared from glucose as optical sensor for glucose

Energy Technology Data Exchange (ETDEWEB)

Shehab, Mona, E-mail: mona_shehab@alexu.edu.eg [Materials Science Department, Institute of Graduate Studies & Research, Alexandria University (Egypt); General Bureau of Beheira Governorate, Damanhour, Beheira 22111 (Egypt); Ebrahim, Shaker; Soliman, Moataz [Materials Science Department, Institute of Graduate Studies & Research, Alexandria University (Egypt)

2017-04-15

Quantum Dots (QDs) show promise materials for many technological applications. In this work we utilized a simple route to prepare graphene quantum dots (GQDs) using glucose carbonization. GQDs functionalized with phenylboronic acid receptors were employed as a sensing material for a nonenzymatic glucose sensor. Photoluminance spectra of GQDs were used as a property of optical sensor for glucose. GQDs considered as a good sensing probe because of its low toxicity, high photoluminance, water solubility and excelent photochemical properties. The prepared GQDs were characterized using UV-visible, Raman and photoluminance spectroscopies, X-ray diffraction and high resolution transmission electron microscopy (HRTEM). HRTEM micrographs confirmed the preparation of 7–10 nm GQDs and the emission peak of the GQDs appeared at 450 nm. The developed sensor has linear response to glucose over a concentration range of 4–40 mM with a correlation coefficient of 0.97 and a low detection limit of approximately 3.0 mM.

Investigation of the optical characteristics of a combination of InP/ZnS-quantum dots with MWCNTs in a PMMA matrix

Science.gov (United States)

Landi, G.; Henninger, M.; De Girolamo del Mauro, A.; Borriello, C.; Di Luccio, T.; Neitzert, H. C.

2013-10-01

In the present study we investigated a combination of quantum dots with multi-walled carbon nanotubes as a possible future additive to the active layer of polymer solar cells. In this case the quantum dots should serve to enhance the long wavelength response of the solar cell, while the nanotubes enhance the charge carrier collection efficiency by favoring charge carrier separation and enhancement of the lateral conduction of the films. In order to clarify the interplay of the nanoparticles only, we deposited them into a non-conducting and transparent polymethyl-methalacrylate (PMMA) matrix. InP/ZnS quantum dots with an emission peak wavelength of 660 nm have been chosen in this study, because their addition can enhance the long wavelength response of conventional poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) bulk heterostructure polymer solar cells. In our study we kept the quantum dot concentration constant and varied the concentration of the carbon nanotubes (CNTs) in the deposited films. The characterization of the film morphology by scanning electron microscopy (SEM) imaging and of the optical properties by photoluminescence and transmittance revealed a rather complex interplay between nanotubes and quantum dots. In particular we found a strong quenching of the photoluminescence and an inhomogeneous CNT distribution for carbon nanotube concentrations exceeding 1%. The decrease in optical transmittance of the films with increasing CNT concentration is less pronounced, when quantum dots (QDs) are added. The optical transmittance in a wavelength range between 380 nm and 800 nm of the composites could be expressed empirically as a simple second order polynomial function.

Optical investigations and control of spindynamics in Mn doped II-VI quantum dots

International Nuclear Information System (INIS)

Schmidt, Thomas

2009-01-01

The present thesis deals with the spin of charge carriers confined in CdSe/ZnSe quantum dots (QDs) closely linked to the polarization of emitted photons. II-VI material systems can be adequately mixed with the B-group element manganese. Such semimagnetic nanostructures offer a number of characteristic optical and electronic features. This is caused by an exchange interaction between the spin of optically excited carriers and the 3d electrons of the Mn ions. Within the framework of this thesis addressing of well defined spin states was realized by optical excitation of charge carriers. The occupation of different spin states was detected by the degree of polarization of the emitted photoluminescence (PL) light. For that purpose different optical methods of time-resolved and time-integrated spectroscopy as well as investigations in magnetic fields were applied. (orig.)

Sensing application of an optical fiber dip coated with L-Cystein ethyl ester hydrochloride capped ZnTe quantum dots

Directory of Open Access Journals (Sweden)

Sundaray Madhulita

2016-09-01

Full Text Available Optical fiber in conjunction with ZnTe quantum dots (QDs is investigated for sensing application. ZnTe QDs, are synthesized by a simple chemical bottom up approach. Quantum dots are capped with L-Cystein ethyl ester hydrochloride (LEEH, to increase their stability. Then LEEH capped ZnTe QDs, whose size is estimated as 2.29 nm by effective mass approximation (EMA, are dip-coated on a cladding removed optical fiber. Different concentrations of alcohol and ammonia are used to investigate the sensing behavior. It is found that sensitivity of the sensor increases with the use of QDs for both alcohol and ammonia.

Optical power limiting in ensembles of colloidal Ag{sub 2}S quantum dots

Energy Technology Data Exchange (ETDEWEB)

Ovchinnikov, O V; Smirnov, M S; Perepelitsa, A S; Shatskikh, T S [Voronezh State University, Voronezh (Russian Federation); Shapiro, B I [M.V. Lomonosov Moscow State Academy of Fine Chemical Technology, Moscow (Russian Federation)

2015-12-31

The effect of power limiting for optical radiation at a wavelength of 660 nm with a pulse duration of 10 ms and operation threshold of 2.2 – 3.1 mJ cm{sup -2} is observed in ensembles of colloidal Ag{sub 2}S quantum dots (QDs). Using the z-scanning method in an open-aperture scheme it is found that the power is limited mainly due to reverse saturable absorption caused by two-photon optical transitions that involve energy levels of Ag{sub 2}S photoluminescence centres, related to structural impurity defects in colloidal Ag{sub 2}S QDs. At the same time, the z-scanning in a closed-aperture scheme demonstrates the formation of a thermal dynamic lens. (nonlinear optical phenomena)

Electric and Magnetic Interaction between Quantum Dots and Light

DEFF Research Database (Denmark)

Tighineanu, Petru

argue that there is ample room for improving the oscillator strength with prospects for approaching the ultra-strong-coupling regime of cavity quantum electrodynamics with optical photons. These outstanding gures of merit render interface-uctuation quantum dots excellent candidates for use in cavity...... quantum electrodynamics and quantum-information science. We investigate exciton localization in droplet-epitaxy quantum dots by conducting spectral and time-resolved measurements. We nd small excitons despite the large physical size of dropletepitaxy quantum dots, which is attributed to material inter......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

Science.gov (United States)

Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

2018-05-01

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Optical localization of quantum dots in tapered nanowires

DEFF Research Database (Denmark)

Østerkryger, Andreas Dyhl; Gregersen, Niels; Fons, Romain

2017-01-01

In this work we have measured the far-field emission patterns of In As quantum dots embedded in a GaAs tapered nanowire and used an open-geometry Fourier modal method for determining the radial position of the quantum dots by computing the far-field emission pattern for different quantum dot...

Optical properties of individual site-controlled Ge quantum dots

Energy Technology Data Exchange (ETDEWEB)

Grydlik, Martyna, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany); Brehm, Moritz, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Tayagaki, Takeshi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Langer, Gregor; Schäffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)

2015-06-22

We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

Influence of cell-internalization on relaxometric, optical and compositional properties of targeted paramagnetic quantum dot micelles

NARCIS (Netherlands)

Starmans, L. W. E.; Kok, M. B.; Sanders, H. M. H. F.; Zhao, Y.; Donegá, C. de Mello; Meijerink, A.; Mulder, W. J. M.; Grüll, H.; Strijkers, G. J.; Nicolay, K.

2011-01-01

Quantum dot micelles (pQDs) with a paramagnetic coating are promising nanoparticles for bimodal molecular imaging. Their bright fluorescence allows for optical detection, while their Gd payload enables visualization with contrast-enhanced MRI. A popular approach in molecular MRI is the targeting of

Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

Science.gov (United States)

Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

2011-01-31

Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

Composition-controlled optical properties of colloidal CdSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Ayele, Delele Worku [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Department of Chemistry, Bahir Dar University, Bahir Dar (Ethiopia); Su, Wei-Nien, E-mail: wsu@mail.ntust.edu.tw [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chou, Hung-Lung [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Pan, Chun-Jern [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Hwang, Bing-Joe, E-mail: bjh@mail.ntust.edu.tw [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)

2014-12-15

Graphical abstract: - Highlights: • The surface of CdSe QDs are modified with cadmium followed by selenium. • The optical properties of CdSe QDs can be controlled by manipulating the composition. • Surface compositional change affects the surface defects or traps and recombination. • The surface trapping state can be controlled by tuning the surface composition. • A change in composition shows a change in the carrier life time. - Abstract: A strategy with respect to band gap engineering by controlling the composition of CdSe quantum dots (QDs) is reported. After the CdSe QDs are prepared, their compositions can be effectively manipulated from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich QDs. To obtain Cd-rich CdSe QDs, Cd was deposited on equimolar CdSe QDs. Further deposition of Se on Cd-rich CdSe QDs produced Se-rich CdSe QDs. The compositions (Cd:Se) of the as-prepared CdSe quantum dots were acquired by Energy-dispersive X-ray spectroscopy (EDX). By changing the composition, the overall optical properties of the CdSe QDs can be manipulated. It was found that as the composition of the QDs changes from 1:1 (Cd:Se) CdSe to Cd-rich and then Se-rich CdSe, the band gap decreases along with a red shift of UV–vis absorption edges and photoluminescence (PL) peaks. The quantum yield also decreases with surface composition from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich, largely due to the changes in the surface state. Because of the involvement of the surface defect or trapping state, the carrier life time increased from the 1:1 (Cd:Se) CdSe QDs to the Cd-rich to the Se-rich CdSe QDs. We have shown that the optical properties of CdSe QDs can be controlled by manipulating the composition of the surface atoms. This strategy can potentially be extended to other semiconductor nanocrystals to modify their properties.

Composition-controlled optical properties of colloidal CdSe quantum dots

International Nuclear Information System (INIS)

Ayele, Delele Worku; Su, Wei-Nien; Chou, Hung-Lung; Pan, Chun-Jern; Hwang, Bing-Joe

2014-01-01

Graphical abstract: - Highlights: • The surface of CdSe QDs are modified with cadmium followed by selenium. • The optical properties of CdSe QDs can be controlled by manipulating the composition. • Surface compositional change affects the surface defects or traps and recombination. • The surface trapping state can be controlled by tuning the surface composition. • A change in composition shows a change in the carrier life time. - Abstract: A strategy with respect to band gap engineering by controlling the composition of CdSe quantum dots (QDs) is reported. After the CdSe QDs are prepared, their compositions can be effectively manipulated from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich QDs. To obtain Cd-rich CdSe QDs, Cd was deposited on equimolar CdSe QDs. Further deposition of Se on Cd-rich CdSe QDs produced Se-rich CdSe QDs. The compositions (Cd:Se) of the as-prepared CdSe quantum dots were acquired by Energy-dispersive X-ray spectroscopy (EDX). By changing the composition, the overall optical properties of the CdSe QDs can be manipulated. It was found that as the composition of the QDs changes from 1:1 (Cd:Se) CdSe to Cd-rich and then Se-rich CdSe, the band gap decreases along with a red shift of UV–vis absorption edges and photoluminescence (PL) peaks. The quantum yield also decreases with surface composition from 1:1 (Cd:Se) CdSe QDs to Cd-rich and then to Se-rich, largely due to the changes in the surface state. Because of the involvement of the surface defect or trapping state, the carrier life time increased from the 1:1 (Cd:Se) CdSe QDs to the Cd-rich to the Se-rich CdSe QDs. We have shown that the optical properties of CdSe QDs can be controlled by manipulating the composition of the surface atoms. This strategy can potentially be extended to other semiconductor nanocrystals to modify their properties

Optical Spectroscopy Of Charged Quantum Dot Molecules

Science.gov (United States)

Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2007-04-01

Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

Giant nonlinear interaction between two optical beams via a quantum dot embedded in a photonic wire

DEFF Research Database (Denmark)

Nguyen, H.A.; Grange, T.; Reznychenko, B.

2018-01-01

a tailored photonic environment. Here, we demonstrate a two-mode giant nonlinearity with a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. We exploit two detuned optical transitions associated with the exciton-biexciton QD level scheme. Owing to the broadband waveguide antenna...

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

International Nuclear Information System (INIS)

Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

2012-01-01

We report on the effect of post-growth thermal annealing of [011]-, [01 1-bar ]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots. (paper)

Fast synthesize ZnO quantum dots via ultrasonic method.

Science.gov (United States)

Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

2016-05-01

Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

The effects of temperature, hydrostatic pressure and size on optical gain for GaAs spherical quantum dot laser with hydrogen impurity

Science.gov (United States)

Owji, Erfan; Keshavarz, Alireza; Mokhtari, Hosein

2016-10-01

In this paper, the effects of temperature, hydrostatic pressure and size on optical gain for GaAs spherical quantum dot laser with hydrogen impurity are investigated. For this purpose, the effects of temperature, pressure and quantum dot size on the band gap energy, effective mass, and dielectric constant are studied. The eigenenergies and eigenstates for valence and conduction band are calculated by using Runge-Kutta numerical method. Results show that changes in the temperature, pressure and size lead to the alteration of the band gap energy and effective mass. Also, increasing the temperature redshifts the optical gain peak and at special temperature ranges lead to increasing or decreasing of it. Further, by reducing the size, temperature-dependent of optical gain is decreased. Additionally, enhancing of the hydrostatic pressure blueshifts the peak of optical gain, and its behavior as a function of pressure which depends on the size. Finally, increasing the radius rises the redshifts of the peak of optical gain.

Influence of Fano interference and incoherent processes on optical bistability in a four-level quantum dot nanostructure

International Nuclear Information System (INIS)

Hossein Asadpour, Seyyed; Solookinejad, G; Panahi, M; Ahmadi Sangachin, E

2016-01-01

Role of Fano interference and incoherent pumping field on optical bistability in a four-level designed InGaN/GaN quantum dot nanostructure embedded in a unidirectional ring cavity are analyzed. It is found that intensity threshold of optical bistability can be manipulated by Fano interference. It is shown that incoherent pumping fields make the threshold of optical bistability behave differently by Fano interference. Moreover, in the presence of Fano interference the medium becomes phase-dependent. Therefore, the relative phase of applied fields can affect the behaviors of optical bistability and intensity threshold can be controlled easily. (paper)

Ferric oxide quantum dots in stable phosphate glass system and their magneto-optical study

Energy Technology Data Exchange (ETDEWEB)

Garaje, Sunil N.; Apte, Sanjay K. [Nanocomposite Group, Centre for Materials for Electronics Technology (C-MET), Department of Electronics and Information Technology (DeitY), Government of India, Panchawati, Off Pashan Road, Pune 411008 (India); Kumar, Ganpathy [Department of Electrical and Computer Engineering, Tennessee Technological University, 1 William L. Jones Drive, Cookeville, TN 38505 (United States); Panmand, Rajendra P.; Naik, Sonali D. [Nanocomposite Group, Centre for Materials for Electronics Technology (C-MET), Department of Electronics and Information Technology (DeitY), Government of India, Panchawati, Off Pashan Road, Pune 411008 (India); Mahajan, Satish M., E-mail: smahajan@tntech.edu [Department of Electrical and Computer Engineering, Tennessee Technological University, 1 William L. Jones Drive, Cookeville, TN 38505 (United States); Chand, Ramesh [Ministry of Communications and Information Technology, Department of Electronics and Information Technology (DeitY), Electronics Niketan, 6, CGO Complex, New Delhi 110003 (India); Kale, Bharat B., E-mail: bbkale@cmet.gov.in [Nanocomposite Group, Centre for Materials for Electronics Technology (C-MET), Department of Electronics and Information Technology (DeitY), Government of India, Panchawati, Off Pashan Road, Pune 411008 (India)

2013-02-15

Graphical abstract: We report synthesis of ferric oxide embedded low melting phosphate glass nanocomposite and also the effect of ferric oxide nanoparticles (NCs) content on the optical and magneto-optical properties of the glasses. Faraday rotation of the glass nanocomposites was measured and showed variation in Verdet constant with concentration of ferric oxide. Interestingly, the host glass itself showed fairly good Verdet constant (11.5°/T cm) and there is a threefold enhancement in the Verdet constant of ferric oxide quantum dot-glass nanocomposite. Highlights: ► We synthesize ferric oxide embedded low melting stable phosphate glass nanocomposite. ► Glasses doped with 0.25 and 2% ferric oxide show particle size in the range of 4–12 nm. ► The host phosphate glass itself shows fairly good Verdet constant (11.5°/T cm). ► Glasses doped with 0.25% ferric oxide show high Verdet constant (30.525°/T cm). ► The as synthesis glasses may have potential application in magneto optical devices. -- Abstract: Herein, we report the synthesis of ferric oxide embedded low melting phosphate glass nanocomposite and also the effect of ferric oxide nanoparticles content on the optical and magneto-optical properties of the glasses. The optical study clearly showed red shift in optical cut off with increasing ferric oxide concentration. The band gap of the host glass was observed to be 3.48 eV and it shifted to 3.14 eV after doping with ferric oxide. The glasses doped with 0.25 and 2% ferric oxide showed particle size of 4–6 nm and 8–12 nm, respectively. Faraday rotation of the glass nanocomposites was measured and showed variation in the Verdet constant as per increasing concentration of ferric oxide. Interestingly, the host glass itself showed fairly good Verdet constant (11.5°/T cm) and threefold enhancement was observed in the Verdet constant of ferric oxide quantum dot-glass nanocomposite.

Calixarene capped ZnS quantum dots as an optical nanoprobe for detection and determination of menadione.

Science.gov (United States)

Joshi, Kuldeep V; Joshi, Bhoomika K; Pandya, Alok; Sutariya, Pinkesh G; Menon, Shobhana K

2012-10-21

In this communication we report a p-sulfonatocalix[4]arene coated ZnS quantum dots "cup type" highly stable optical probe for the detection and determination of menadione (VK(3)) with high sensitivity and selectivity. The detection of VK(3) depends on supramolecular host-guest chemistry.

High transmittance optical films based on quantum dot doped nanoscale polymer dispersed liquid crystals

Science.gov (United States)

Gandhi, Sahil Sandesh; Chien, Liang-Chy

2016-04-01

We propose a simple way to fabricate highly transparent nanoscale polymer dispersed liquid crystal (nano-PDLC) films between glass substrates and investigate their incident angle dependent optical transmittance properties with both collimated and Lambertian intensity distribution light sources. We also demonstrate that doping nano-PDLC films with 0.1% InP/ZnS core/shell quantum dots (QD) results in a higher optical transmittance. This work lays the foundation for such nanostructured composites to potentially serve as roll-to-roll coatable light extraction or brightness enhancement films in emissive display applications, superior to complex nanocorrugation techniques proposed in the past.

Two optically active molybdenum disulfide quantum dots as tetracycline sensors

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhuosen; Lin, Jintai [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Gao, Jinwei [Institute for Advanced Materials, Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006 (China); Wang, Qianming, E-mail: qmwang@scnu.edu.cn [Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Guangzhou Key Laboratory of Materials for Energy Conversion and Storage, 510006 (China)

2016-08-01

In this work, we use the hydrothermal method to develop two luminescent MoS{sub 2} quantum dots (QDs) from L-cysteine and glutathione as sulfur precursors. The special blue emissions give rise to an instantaneous determination of tetracycline (TC) through the quenching of its luminescence. The accessibility of the optical materials and recognition mechanism have been extensively studied. This strategy demonstrated that MoS{sub 2} could act as a new platform for anchoring bioactive species or particular functional moieties. - Highlights: • MoS{sub 2} nanostructures with water solubility have been fabricated. • Blue emission has been achieved. • It displays selective detection to tetracyclines in water.

Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

Science.gov (United States)

Kim, Jimyung; Delfyett, Peter J

2008-07-21

We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7 μm wavelength region

NARCIS (Netherlands)

Tilma, B.W.; Jiao, Y.; Kotani, J.; Smalbrugge, B.; Ambrosius, H.P.M.M.; Thijs, P.J.A.; Leijtens, X.J.M.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

2012-01-01

In this paper we present the design and characterization of a monolithically integrated tunable laser for optical coherence tomography in medicine. This laser is the first monolithic photonic integrated circuit containing quantum-dot amplifiers, phase modulators and passive components. We

Optical absorption in a disk-shaped quantum dot in the presence of an impurity

Energy Technology Data Exchange (ETDEWEB)

Mikhail, I.F.I., E-mail: ifi_mikhail@hotmail.com [Department of Mathematics, Faculty of Science, Ain Shams University, Cairo (Egypt); Shafee, A.M. [Department of Mathematics, Faculty of Girls, Art, Science and Education, Ain Shams University, Cairo (Egypt)

2017-02-15

The linear and third order nonlinear optical absorption coefficients have been calculated in a two dimensional disk quantum dot. The confinement potential has been taken to be a combination of a parabolic and inverse squared part. The study has been performed in the presence of a perpendicular static magnetic field and a central or off-central impurity. The resulting Schrödinger equation has been solved by applying the variational method. It has been found that the presence of impurity causes a huge increase in the square of the transition matrix and in the absorption coefficients, in particular in the third order coefficient. Moreover, the asymmetry which results in the case of off-central impurity has been dealt with carefully by taking into consideration the transition matrices which vanish in other cases. - Highlights: • The optical absorption in a two dimensional disk-shaped quantum dot is investigated. • A static magnetic field is applied perpendicular to the plane of the disk. • The study is performed in the presence of central or off- central impurity. • The variational approach has been applied to find the energies and wave functions. • The presence and location of impurity play effective roles.

Angular dependence of dose sensitivity of nanoDot optically stimulated luminescent dosimeters in different radiation geometries

Energy Technology Data Exchange (ETDEWEB)

Jursinic, Paul A., E-mail: pjursinic@wmcc.org [West Michigan Cancer Center, 200 North Park Street, Kalamazoo, Michigan 49007 (United States)

2015-10-15

Purpose: A type of in vivo dosimeter, an optically stimulated luminescent dosimeter, OSLD, may have dose sensitivity that depends on the angle of incidence of radiation. This work measures how angular dependence of a nanoDot changes with the geometry of the phantom in which irradiation occurs and with the intrinsic structure of the nanoDot. Methods: The OSLDs used in this work were nanoDot dosimeters (Landauer, Inc., Glenwood, IL), which were read with a MicroStar reader (Landauer, Inc., Glenwood, IL). Dose to the OSLDs was delivered by 6 MV x-rays. NanoDots with various intrinsic sensitivities were irradiated in numerous phantoms that had geometric shapes of cylinders, rectangles, and a cube. Results: No angular dependence was seen in cylindrical phantoms, cubic phantoms, or rectangular phantoms with a thickness to width ratio of 0.3 or 1.5. An angular dependence of 1% was observed in rectangular phantoms with a thickness to width of 0.433–0.633. A group of nanoDots had sensitive layers with mass density of 2.42–2.58 g/cm{sup 3} and relative sensitivity of 0.92–1.09 and no difference in their angular dependence. Within experimental uncertainty, nanoDot measurements agree with a parallel-plate ion chamber at a depth of maximum dose. Conclusions: When irradiated in cylindrical, rectangular, and cubic phantoms, nanoDots show a maximum angular dependence of 1% or less at an incidence angle of 90°. For a sample of 78 new nanoDots, the range of their relative intrinsic sensitivity is 0.92–1.09. For a sample of ten nanoDots, on average, the mass in the sensitive layer is 73.1% Al{sub 2}O{sub 3}:C and 26.9% polyester. The mass density of the sensitive layer of a nanoDot disc is between 2.42 and 2.58 g/cm{sup 3}. The angular dependence is not related to Al{sub 2}O{sub 3}:C loading of the nanoDot disc. The nanoDot at the depth of maximum dose has no more angular dependence than a parallel-plate ion chamber.

Mapping the Local Density of Optical States of a Photonic Crystal with Single Quantum Dots

DEFF Research Database (Denmark)

Wang, Qin; Stobbe, Søren; Lodahl, Peter

2011-01-01

We use single self-assembled InGaAs quantum dots as internal probes to map the local density of optical states of photonic crystal membranes. The employed technique separates contributions from nonradiative recombination and spin-flip processes by properly accounting for the role of the exciton...... fine structure. We observe inhibition factors as high as 70 and compare our results to local density of optical states calculations available from the literature, thereby establishing a quantitative understanding of photon emission in photonic crystal membranes. © 2011 American Physical Society....

A quintuple quantum dot system for electrical and optical control of multi/bistability in a telecommunication window

International Nuclear Information System (INIS)

Mehmannavaz, Mohammad Reza; Sattari, Hamed

2015-01-01

We propose a model for a quintuple coupled quantum dot system based on a GaAs/AlGaAs heterostructure. Then, we analyze the optical bistability (OB) and optical multistability (OM) behaviours and transition between the regimes at a wavelength of λ=1.550 μm. We take the benefit of consecutive and parallel interdot tunnelling and an incoherent pumping field for electrical and even optical control of the processes. It is shown that OB, OM and transition between them can be accomplished and controlled by adjusting the rate of the inter-dot tunnellings (electrical bias), probe wavelength detuning and rate of the optical incoherent pumping field. By proper choice of the controlling parameters, the bistable hysteresis loop becomes narrower, which makes it easier for the cavity field to reach saturation. We interpret the OB and OM behaviours by discussing the absorption of the active medium. We also investigate switching time between the two stable states when the output field jumps from a lower branch to an upper branch. Such a controllable OB/OM and transition between them in multiple QD molecules at a wavelength of 1.550 μm, may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing. (letter)

Nonlinear optical rectification in a vertically coupled lens-shaped InAs/GaAs quantum dots with wetting layers under hydrostatic pressure and temperature

Energy Technology Data Exchange (ETDEWEB)

Ben Mahrsia, R.; Choubani, M., E-mail: mohsenchoubani3@yahoo.fr; Bouzaiene, L.; Maaref, H.

2016-06-25

In this paper we explore the structure parameters, hydrostatic pressure and temperature effects on Nonlinear optical rectification (NOR) in an asymmetric vertically coupled lens-shaped InAs/GaAs quantum dots. During epitaxial growth, lens-shaped quantum dots (QDs) are formed on the wetting layer (WL). Many theoretical works have neglected WL and its effect on nonlinear optical properties of QD-based systems for sake of simplicity. However, in this work the WL has been shown to be so influential in the intersubband energy and nonlinear optical rectification magnitude. Also, a detailed and comprehensive study of the nonlinear optical rectification is theoretical investigated within the framework of the compact density-matrix approach and finite difference method (FDM). It's found that nonlinear optical rectification coefficient is strongly affected not only by the WL, but also by the pressure, temperature and the coupled width between the QDs. Obtained results revealed that a red or a blue shift cane be observed. This behavior in the NOR gives a new degree of freedom in regions of interest for device applications. - Highlights: • Vertically coupled lens-shaped InAs/GaAs quantum dots is investigated. • Photon energy shifts towards the red with increasing pressure. • Photon energy shifts towards the blue with increasing temperature. • Intersubband energy decreases with increasing the wetting layer width. • Nonlinear optical rectification magnitude is controlled and adjusted.

Optical anisotropy in vertically coupled quantum dots

DEFF Research Database (Denmark)

Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

1999-01-01

We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm Invited Paper

Institute of Scientific and Technical Information of China (English)

D. Bimberg; C. Meuer; M. L(a)mmlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein

2008-01-01

@@ The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.

Quantum dots and nanocomposites.

Science.gov (United States)

Mansur, Herman Sander

2010-01-01

Quantum dots (QDs), also known as semiconducting nanoparticles, are promising zero-dimensional advanced materials because of their nanoscale size and because they can be engineered to suit particular applications such as nonlinear optical devices (NLO), electro-optical devices, and computing applications. QDs can be joined to polymers in order to produce nanocomposites which can be considered a scientific revolution of the 21st century. One of the fastest moving and most exciting interfaces of nanotechnology is the use of QDs in medicine, cell and molecular biology. Recent advances in nanomaterials have produced a new class of markers and probes by conjugating semiconductor QDs with biomolecules that have affinities for binding with selected biological structures. The nanoscale of QDs ensures that they do not scatter light at visible or longer wavelengths, which is important in order to minimize optical losses in practical applications. Moreover, at this scale, quantum confinement and surface effects become very important and therefore manipulation of the dot diameter or modification of its surface allows the properties of the dot to be controlled. Quantum confinement affects the absorption and emission of photons from the dot. Thus, the absorption edge of a material can be tuned by control of the particle size. This paper reviews developments in the myriad of possibilities for the use of semiconductor QDs associated with molecules producing novel hybrid nanocomposite systems for nanomedicine and bioengineering applications.

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

Science.gov (United States)

Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

2015-02-01

The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

International Nuclear Information System (INIS)

Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Mustafa, M. K.

2015-01-01

The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ∼ 0.26× 10 11 cm −2 ) and dome-shape morphologies with relatively high density ∼ 0.92 × 10 11 cm −2 , respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ∼ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO 2 or GeO x and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge–Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. (paper)

High-resolution photoluminescence studies of single semiconductor quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

2000-01-01

Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

Temperature dependence of the optical energy gap in CdS sub x Se sub 1 sub - sub x quantum dots

CERN Document Server

Kunets, V P; Kunets, V P; Lisitsa, M P; Malysh, N I

2002-01-01

The temperature dependence of the optical energy gap E sub g (T) in CdS sub x Se sub 1 sub - sub x quantum dots synthesized in a borosilicate glass matrix has been investigated in the range of 4.2-500 K. A dependence similar to that for bulk crystals is observed for dots with r-bar > a sub B (r-bar being an average radius of the dot and a sub B the Bohr exciton radius in the bulk), which is described by Varshni formula within the whole temperature range. Deviations from the Varshni dependence in the range 4.2-100 K and smaller band-gap temperature coefficient are observed for dots with r-bar < a sub B. These results are explained in terms of the decrease of the macroscopic electron-phonon interaction potential and the modification of the vibration spectrum peculiar to the dot volume shrinkage

Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

Science.gov (United States)

Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

2017-12-01

Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

Moodle Wave: Reinventing the VLE using Widget technologies

NARCIS (Netherlands)

Wilson, Scott; Sharples, Paul; Popat, Kris; Griffiths, Dai

2009-01-01

Wilson, S., Sharples, P., Popat, K., & Griffiths, D. (2009). Moodle Wave: Reinventing the VLE using Widget technologies. In F. Wild, M. Kalz, M. Palmér & D. Müller (Eds.), Proceedings of 2nd Workshop Mash-Up Personal Learning Envrionments (MUPPLE'09). Workshop in conjunction with 4th European

Chemically functionalized ZnS quantum dots as new optical nanosensor of herbicides

Science.gov (United States)

Masteri-Farahani, M.; Mahdavi, S.; Khanmohammadi, H.

2018-03-01

Surface chemical functionalization of ZnS quantum dots (ZnS-QDs) with cysteamine hydrochloride resulted in the preparation of an optical nanosensor for detection of herbicides. Characterization of the functionalized ZnS-QDs was performed with physicochemical methods such as x-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) spectroscopy, energy dispersive x-ray (EDX) analysis, ultraviolet-visible (UV–vis) and photoluminescence (PL) spectroscopies. The optical band gap of the functionalized ZnS-QDs was determined by using Tauc plot as 4.1 eV. Addition of various herbicides resulted in the linearly fluorescence quenching of the functionalized ZnS-QDs according to the Stern-Volmer equation. The functionalized ZnS-QDs can be used as simple, rapid, and inexpensive nanosensor for practical detection and measurement of various herbicides.

Notes for media reinvention

Directory of Open Access Journals (Sweden)

Jesús Miguel Flores-Vivar

2009-10-01

Full Text Available Journalism and media are going through a change of era. This change is reflected in the transformation of journalism and media-lived and that another major in 1980 that became known as mediamorphosis, by this, professionals have to learn new roles. The impact of information technology and Internet has changed the way how you present the news and, most importantly, transform the business model that has characterized media companies. This article analyzes the current situation provides some strategic guidelines to be followed by some media-and-do and studied some of the new profiles arebeginning to emerge as a result of the reinvention of journalism and the media.

Surface ligands affect photoinduced modulation of the quantum dots optical performance

Science.gov (United States)

Krivenkov, Victor A.; Samokhvalov, Pavel S.; Linkov, Pavel A.; Solovyeva, Daria O.; Kotkovskii, Gennadii E.; Chistyakov, Alexander A.; Nabiev, Igor

2014-05-01

Changes of optical properties of the solutions of CdSe/ZnS quantum dots (QDs) covered with the trioctylphosphine oxide (TOPO) ligands under the pulsed ultraviolet (UV) laser irradiation are observed. The fluorescence quantum yield (QY) of QDs decreases by more than an order of magnitude when the radiation dose approaches 2 × 10-15 J per particle. This process is accompanied by a blue shift of both fluorescence and the first excitonic absorption peaks. The fluorescence quenching becomes less pronounced when the overall TOPO content in the solution is increased. When ТОРО ligands are replaced with n-hexadecylamine (HDA), QY and spectral properties are not changed at the same irradiation conditions. We assume that the above changes of the optical properties are associated with photooxidation of TOPO ligands by excited QD. Such process is less probable for the HDA ligand due to its different energy structure.

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

Directory of Open Access Journals (Sweden)

Adenilson José Chiquito

2004-09-01

Full Text Available A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.

Gunn's dots in retinal images of 2,286 adolescents

DEFF Research Database (Denmark)

Boberg-Ans, Lars C.; Munch, Inger C.; Larsen, Michael

2017-01-01

a 6 mm grid centered on the optic disc. Results: One or more Gunn's dots were seen in at least one eye in 82.6% of children. The median number of Gunn's dots per eye was 46 (range 0-482). Most Gunn's dots were found inferior and superior of the optic disc (49.3% and 45.8%, respectively, of the total...... number of Gunn's dots in the population). The odds for having 1 or more Gunn's dots were 3-fold greater in children with dark brown irides compared with children with blue irides (odds ratio 2.99, 95% CI 1.81 to 4.94, P, 0.0001 adjusted for age, sex, retinal nerve fiber layer thickness, refraction...

Binding energy and optical properties of an off-center hydrogenic donor impurity in a spherical quantum dot placed at the center of a cylindrical nano-wire

International Nuclear Information System (INIS)

Safarpour, Gh.; Barati, M.; Zamani, A.; Niknam, E.

2014-01-01

The binding energy as well as the linear, third-order nonlinear and total optical absorption coefficient and refractive index changes of an off-center hydrogenic donor impurity in an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano-wire have been investigated. In this regard, the effective-mass approximation approach is considered and eigenvalues and corresponding eigenfunctions are calculated via the finite element method. The binding energy is plotted as a function of the dot size and impurity position along with optical properties as a function of photon energy. In this study two different directions have been considered for impurity position, along the nano-wire axis and perpendicular to it. It has been found that the binding energy, absorption coefficient and refractive index changes are impressively affected not only by the dot radius but also by the position of the impurity and its direction. Additionally, the optical saturation can be tuned by the direction of the impurity and incident optical intensity. -- Highlights: • We consider spherical quantum dot located at the center of a cylindrical nano-wire. • An off-center hydrogenic donor impurity is considered in the system. • Binding energy is affected by orientation of impurity and its distance from center. • Saturation depends on the orientation of impurity position. • By shifting impurity position, orientation and dot radius blue- and red-shifts appear

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Towards an indigenous model of conflict resolution: Reinventing ...

African Journals Online (AJOL)

they have increasingly become victims of male violence. How and why did ... Reinventing women's roles as traditional peacebuilders in neo-colonial Africa .... first instance based on field work, but rather on a study of relevant literature and ... respect for human dignity (rights) and the sanctity of life (Adjibolosoo 1995:33).

Entrepreneurs in the Public Library: Reinventing an Institution.

Science.gov (United States)

Clay, Edwin S. III; Bangs, Patricia C.

2000-01-01

Presents a case study that describes how the Fairfax County Public (VA) has reinvented itself as a public service corporation by developing a public-private model for fund development using a top managerial committee. Discusses volunteer programs, partnerships with local utility companies, and staff training in managing patron problem behavior.…

Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2013-07-29

We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy.

Science.gov (United States)

Linares-García, Gabriel; Meza-Montes, Lilia; Stinaff, Eric; Alsolamy, S M; Ware, M E; Mazur, Y I; Wang, Z M; Lee, Jihoon; Salamo, G J

2016-12-01

Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k · p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement.

Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

Science.gov (United States)

Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

2005-07-01

Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2003-01-01

The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights ...

Spectroscopy of Charged Quantum Dot Molecules

Science.gov (United States)

Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

2006-03-01

Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

Manipulating the optical properties of CdSe/ZnSSe quantum dot based monolithic pillar microcavities

Energy Technology Data Exchange (ETDEWEB)

Seyfried, Moritz; Kalden, Joachim; Lohmeyer, Henning; Sebald, Kathrin; Gutowski, Juergen [Semiconductor Optics, Institute of Solid state Physics, University of Bremen (Germany); Kruse, Carsten; Hommel, Detlef, E-mail: Seyfried@ifp.uni-bremen.d [Semiconductor Epitaxy, Institute of Solid state Physics, University of Bremen (Germany)

2010-02-01

A customization of the optical properties of pillar microcavities on the desired applications is essential for their future use as quantum-optical devices. Therefore, all-epitaxial cavities with CdSe quantum dot embedded in pillar structures with different geometries have been realized by focused-ion-beam etching. The quality factors of circularly shaped pillar microcavities have been measured and their dependence on the excitation power is discussed. As a possibility to achieve polarized light emission, asymmetrically shaped microcavities are presented. Examples of an elliptically shaped pillar as well as of photonic molecules are investigated with respect to their photoluminescence characteristics and polarization.

Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot

International Nuclear Information System (INIS)

Jbara, Ahmed S; Othaman, Zulkafli; Saeed, M A

2016-01-01

Based on the Schrödinger equation for envelope function in the effective mass approximation, linear and nonlinear optical absorption coefficients in a multi-subband lens quantum dot are investigated. The effects of quantum dot size on the interband and intraband transitions energy are also analyzed. The finite element method is used to calculate the eigenvalues and eigenfunctions. Strain and In-mole-fraction effects are also studied, and the results reveal that with the decrease of the In-mole fraction, the amplitudes of linear and nonlinear absorption coefficients increase. The present computed results show that the absorption coefficients of transitions between the first excited states are stronger than those of the ground states. In addition, it has been found that the quantum dot size affects the amplitudes and peak positions of linear and nonlinear absorption coefficients while the incident optical intensity strongly affects the nonlinear absorption coefficients. (paper)

Elastic strain engineering of quantum dot excitonic emission in nanomembranes and optical resonators

Energy Technology Data Exchange (ETDEWEB)

Ding, Fei; Plumhof, Johannes; Rastelli, Armando; Schmidt, Oliver [Institute for Integrative Nanosciences, IFW Dresden (Germany); Singh, Ranber; Zander, Tim; Bester, Gabriel [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

2010-07-01

We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots (QD) embedded in a 200 nm-thick-membrane. Reversible and bi-directional spectral tuning of QD excitonic emission is demonstrated via a simple electro-mechanical device. The most intriguing finding is that biaxial strain is a reliable tool to engineer the QD electronic structure and reach color coincidence between exciton and biexciton emission, providing a vital prerequisite for the generation of polarization entangled photon pairs through a time reordering strategy. The physical origin of this new phenomenon is discussed based on the empirical pseudopotential calculations. With similar technique we study the effect of biaxial stress on single QDs embedded in microring resonators. The microrings can be reversibly stretched or squeezed, resulting in a controllable engineering of both QD emissions and optical modes. Our results open up a new tuning strategy to study cQED with semiconductor quantum dots.

Optical pumping of a single hole spin in a p-doped quantum dot coupled to a metallic nanoparticle

Science.gov (United States)

Antón, M. A.; Carreño, F.; Melle, Sonia; Calderón, Oscar G.; Cabrera-Granado, E.; Singh, Mahi R.

2013-05-01

The preparation of quantum states with a defined spin is analyzed in a hybrid system consisting of a p-doped semiconductor quantum dot (QD) coupled to a metallic nanoparticle. The quantum dot is described as a four-level atom-like system using the density matrix formalism. The lower levels are Zeeman-split hole spin states and the upper levels correspond to positively charged excitons containing a spin-up, spin-down hole pair and a spin electron. A metallic nanoparticle with spheroidal geometry is placed in close proximity to the quantum dot, and its effects are considered in the quasistatic approximation. A linearly polarized laser field drives two of the optical transitions of the QD and produces localized surface plasmons in the nanoparticle which act back upon the QD. The frequencies of these localized plasmons are very different along the two principal axes of the nanoparticle, thus producing an anisotropic modification of the spontaneous emission rates of the allowed optical transitions which is accompanied by local-field corrections. This effect translates into a preferential acceleration of some of the optical pathways and therefore into a fast initialization of the QD by excitation with a short optical pulse. The population transfer between the lower levels of the QD and the fidelity is analyzed as a function of the nanoparticle's aspect ratio, the external magnetic field, and the Rabi frequency of the driving field. It is also shown that the main effect of the local-field corrections is a lengthening of the time elapsed to reach the steady-state. The hole spin is predicted to be successfully cooled from 5 to 0.04 K at a magnetic field of 4.6 T applied in the Voigt geometry.

Knowledge Building: Reinventing Education for the Knowledge Age

Science.gov (United States)

Philip, Donald N.

2011-01-01

This paper examines the Knowledge Age and how economic factors are causing educators to rethink and reinvent education. Two key factors in education in the Knowledge Age will be education for an economy of innovation, and the increasing virtualization of education. We present knowledge building pedagogy as a model for education in the Knowledge…

Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

Energy Technology Data Exchange (ETDEWEB)

Dai, Xiao; Wang, Hao; Yi, Qinghua; Wang, Yun; Cong, Shan; Zhao, Jie; Sun, Yinghui; Zou, Guifu, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Qian, Zhicheng [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Huang, Jianwen; Xiong, Jie, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Luo, Hongmei [Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, New Mexico 88003 (United States)

2015-11-16

Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefits the future development of optoelectronic nanodevices with new functionalities.

PREFACE: Quantum Dot 2010

Science.gov (United States)

Taylor, Robert A.

2010-09-01

These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules

International Nuclear Information System (INIS)

Tian, Si-Cong; Tong, Cun-Zhu; Zhang, Jin-Long; Shan, Xiao-Nan; Fu, Xi-Hong; Zeng, Yu-Gang; Qin, Li; Ning, Yong-Qiang; Wan, Ren-Gang

2015-01-01

The optical bistability of a triangular quantum dot molecules embedded inside a unidirectional ring cavity is studied. The type, the threshold and the hysteresis loop of the optical bistability curves can be modified by the tunneling parameters, as well as the probe laser field. The linear and nonlinear susceptibilities of the medium are also studied to interpret the corresponding results. The physical interpretation is that the tunneling can induce the quantum interference, which modifies the linear and the nonlinear response of the medium. As a consequence, the characteristics of the optical bistability are changed. The scheme proposed here can be utilized for optimizing and controlling the optical switching process

Ionophore-based optical nanosensors incorporating hydrophobic carbon dots and a pH-sensitive quencher dye for sodium detection.

Science.gov (United States)

Galyean, A A; Behr, M R; Cash, K J

2018-01-21

Nanosensors present a biological monitoring method that is biocompatible, reversible, and nano-scale, and they offer many advantages over traditional organic indicators. Typical ionophore-based nanosensors incorporate nile-blue derivative pH indicators but suffer from photobleaching while quantum dot alternatives pose a potential toxicity risk. In order to address this challenge, sodium selective nanosensors containing carbon dots and a pH-sensitive quencher molecule were developed based on an ion-exchange theory and a decoupled recognition element from the pH indicator. Carbon dots were synthesized and integrated into nanosensors containing a pH-indicator, an analyte-binding ligand (ionophore), and a charge-balancing additive. These nanosensors are ion-selective against potassium (selectivity coefficient of 0.4) and lithium (selectivity coefficient of 0.9). Reversible nanosensor response to sodium is also demonstrated. The carbon dot nanosensors are resistant to changes in optical properties for at least 12 h and display stable selectivity to physiologically-relevant sodium (alpha = 0.5 of 200 mM NaCl) for a minimum of 6 days.

Optical manipulation of electron spin in quantum dot systems

Science.gov (United States)

Villas-Boas, Jose; Ulloa, Sergio; Govorov, Alexander

2006-03-01

Self-assembled quantum dots (QDs) are of particular interest for fundamental physics because of their similarity with atoms. Coupling two of such dots and addressing them with polarized laser light pulses is perhaps even more interesting. In this paper we use a multi-exciton density matrix formalism to model the spin dynamics of a system with single or double layers of QDs. Our model includes the anisotropic electron-hole exchange in the dots, the presence of wetting layer states, and interdot tunneling [1]. Our results show that it is possible to switch the spin polarization of a single self-assembled quantum dot under elliptically polarized light by increasing the laser intensity. In the nonlinear mechanism described here, intense elliptically polarized light creates an effective exchange channel between the exciton spin states through biexciton states, as we demonstrate by numerical and analytical methods. We further show that the effect persists in realistic ensembles of dots, and we propose alternative ways to detect it. We also extend our study to a double layer of quantum dots, where we find a competition between Rabi frequency and tunneling oscillations. [1] J. M. Villas-Boas, S. E. Ulloa, and A. O. Govorov, Phys. Rev. Lett. 94, 057404 (2005); Phys. Rev. B 69, 125342 (2004).

Graphene quantum dots

CERN Document Server

Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

2014-01-01

This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

Synthesis of quantum dots

Science.gov (United States)

McDaniel, Hunter

2017-10-17

Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling

OpenAIRE

Hyo-Jun Kim; Min-Ho Shin; Joo-Suc Kim; Se-Eun Kim; Young-Joo Kim

2017-01-01

An optically efficient structure was proposed and fabricated to realize high brightness organic light emitting diode (OLED) displays based on a white OLED prepared with the air-gapped bridges on the quantum dot (QD) patterns. Compared with a conventional white OLED display, in our experiments, the optical intensity of the proposed OLED display shows the enhancement of 58.2% in the red color and 16.8% in the green color after applying the air-gapped bridge structure on QD patterns of 20?wt% co...

CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

Directory of Open Access Journals (Sweden)

Ghasem Rezanejade Bardajee

2013-01-01

Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

Fundamentals and Applications of Semiconductor Nanocrystals : A study on the synthesis, optical properties, and interactions of quantum dots

NARCIS (Netherlands)

Koole, R.

2008-01-01

This thesis focuses on both the fundamental aspects as well as applications of colloidal semiconductor nanocrystals, also called quantum dots (QDs). Due to the unique size-dependent optical and electronic properties of QDs, they hold great promise for a wide range of applications like solar cells,

Optical nonlinearities of colloidal InP@ZnS core-shell quantum dots probed by Z-scan and two-photon excited emission

International Nuclear Information System (INIS)

Wawrzynczyk, Dominika; Szeremeta, Janusz; Samoc, Marek; Nyk, Marcin

2015-01-01

Spectrally resolved nonlinear optical properties of colloidal InP@ZnS core-shell quantum dots of various sizes were investigated with the Z-scan technique and two-photon fluorescence excitation method using a femtosecond laser system tunable in the range from 750 nm to 1600 nm. In principle, both techniques should provide comparable results and can be interchangeably used for determination of the nonlinear optical absorption parameters, finding maximal values of the cross sections and optimizing them. We have observed slight differences between the two-photon absorption cross sections measured by the two techniques and attributed them to the presence of non-radiative paths of absorption or relaxation. The most significant value of two-photon absorption cross section σ 2 for 4.3 nm size InP@ZnS quantum dot was equal to 2200 GM, while the two-photon excitation action cross section σ 2 Φ was found to be 682 GM at 880 nm. The properties of these cadmium-free colloidal quantum dots can be potentially useful for nonlinear bioimaging

External modes in quantum dot light emitting diode with filtered optical feedback

International Nuclear Information System (INIS)

Al Husseini, Hussein B.; Al Naimee, Kais A.; Al-Khursan, Amin H.; Khedir, Ali. H.

2016-01-01

This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to a coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.

Electro-optical and dielectric properties of CdSe quantum dots and 6CHBT liquid crystals composites

Energy Technology Data Exchange (ETDEWEB)

Singh, U. B.; Pandey, M. B., E-mail: mbpandey@gmail.com [Department of Physics, Vikramajit Singh Sanatan Dharama College, Kanpur-208002 (India); Dhar, R; Pandey, A. S. [Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad-211002 (India); Kumar, S. [Raman Research Institute, C. V. Raman Avenue, Bangalore-560080 (India); Dabrowski, R. [Institute of Applied Sciences and Chemistry, Military University of Technology, 00-908-Warswa (Poland)

2014-11-15

We have prepared the composites of a room temperature nematic liquid crystal namely 4-(trans-4-n-hexylcyclohexyl) isothiocyanatobenzoate (6CHBT) and Cadmium Selenide Quantum Dots (CdSe-QDs) and investigated their electro-optical and dielectric properties. Effect of dispersion of CdSe-QDs on various electro-optical and display parameters of host liquid crystalline material have been studied. Physical parameters, such as switching threshold voltage and splay elastic constant have been altered drastically for composites. Dispersion of QDs in a liquid crystals medium destabilizes nematic ordering of the host and decreases the nematic-to-isotropic transition temperature.

Electro-optical and dielectric properties of CdSe quantum dots and 6CHBT liquid crystals composites

International Nuclear Information System (INIS)

Singh, U. B.; Pandey, M. B.; Dhar, R; Pandey, A. S.; Kumar, S.; Dabrowski, R.

2014-01-01

We have prepared the composites of a room temperature nematic liquid crystal namely 4-(trans-4-n-hexylcyclohexyl) isothiocyanatobenzoate (6CHBT) and Cadmium Selenide Quantum Dots (CdSe-QDs) and investigated their electro-optical and dielectric properties. Effect of dispersion of CdSe-QDs on various electro-optical and display parameters of host liquid crystalline material have been studied. Physical parameters, such as switching threshold voltage and splay elastic constant have been altered drastically for composites. Dispersion of QDs in a liquid crystals medium destabilizes nematic ordering of the host and decreases the nematic-to-isotropic transition temperature

Optical pulse dynamics for quantum-dot logic operations in a photonic-crystal waveguide

Energy Technology Data Exchange (ETDEWEB)

Ma, Xun; John, Sajeev [Department of Physics, University of Toronto, Toronto, Ontario, M5S 1A7 Canada (Canada)

2011-11-15

We numerically demonstrate all-optical logic operations with quantum dots (QDs) embedded in a bimodal photonic-crystal waveguide using Maxwell-Bloch equations in a slowly varying envelope approximation (SVEA). The two-level QD excitation level is controlled by one or more femtojoule optical driving pulses passing through the waveguide. Specific logic operations depend on the relative pulse strengths and their detunings from an inhomogeneouslly broadened (about 1% for QD transitions centered at 1.5 {mu}m) QD transition. This excitation controlled two-level medium then determines passage of subsequent probe optical pulses. Envelope equations for electromagnetic waves in the linear dispersion and cutoff waveguide modes are derived to simplify solution of the coupled Maxwell-Bloch equations in the waveguide. These determine the quantum mechanical evolution of the QD excitation and its polarization, driven by classical electromagnetic (EM) pulses near a sharp discontinuity in the EM density of states of the bimodal waveguide. Different configurations of the driving pulses lead to distinctive relations between driving pulse strength and probe pulse passage, representing all-optical logic and, or, and not operations. Simulation results demonstrate that such operations can be done on picosecond time scales and within a waveguide length of about 10 {mu}m in a photonic-band-gap (PBG) optical microchip.

Dicke states in multiple quantum dots

Science.gov (United States)

Sitek, Anna; Manolescu, Andrei

2013-10-01

We present a theoretical study of the collective optical effects which can occur in groups of three and four quantum dots. We define conditions for stable subradiant (dark) states, rapidly decaying super-radiant states, and spontaneous trapping of excitation. Each quantum dot is treated like a two-level system. The quantum dots are, however, realistic, meaning that they may have different transition energies and dipole moments. The dots interact via a short-range coupling which allows excitation transfer across the dots, but conserves the total population of the system. We calculate the time evolution of single-exciton and biexciton states using the Lindblad equation. In the steady state the individual populations of each dot may have permanent oscillations with frequencies given by the energy separation between the subradiant eigenstates.

Quantum dots: Rethinking the electronics

Energy Technology Data Exchange (ETDEWEB)

Bishnoi, Dimple [Department of Physics, S. S. Jain Subodh PG College, Jaipur, Rajasthan Pin-302004 (India)

2016-05-06

In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

Quantum dots as optical labels for ultrasensitive detection of polyphenols.

Science.gov (United States)

Akshath, Uchangi Satyaprasad; Shubha, Likitha R; Bhatt, Praveena; Thakur, Munna Singh

2014-07-15

Considering the fact that polyphenols have versatile activity in-vivo, its detection and quantification is very much important for a healthy diet. Laccase enzyme can convert polyphenols to yield mono/polyquinones which can quench Quantum dots fluorescence. This phenomenon of charge transfer from quinones to QDs was exploited as optical labels to detect polyphenols. CdTe QD may undergo dipolar interaction with quinones as a result of broad spectral absorption due to multiple excitonic states resulting from quantum confinement effects. Thus, "turn-off" fluorescence method was applied for ultrasensitive detection of polyphenols by using laccase. We observed proportionate quenching of QDs fluorescence with respect to polyphenol concentration in the range of 100 µg to 1 ng/mL. Also, quenching of the photoluminescence was highly efficient and stable and could detect individual and total polyphenols with high sensitivity (LOD-1 ng/mL). Moreover, proposed method was highly efficient than any other reported methods in terms of sensitivity, specificity and selectivity. Therefore, a novel optical sensor was developed for the detection of polyphenols at a sensitive level based on the charge transfer mechanism. Copyright © 2014 Elsevier B.V. All rights reserved.

Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots

Science.gov (United States)

Chekhovich, E. A.; Ulhaq, A.; Zallo, E.; Ding, F.; Schmidt, O. G.; Skolnick, M. S.

2017-10-01

Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid-state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC (ref. ) reaches 99% and beyond, it has been limited to 50-65% for the nuclei in quantum dots. Theoretical models have attributed this limit to formation of coherent `dark' nuclear spin states but experimental verification is lacking, especially due to the poor accuracy of polarization degree measurements. Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new approach enabled by manipulation of the nuclear spin states with radiofrequency pulses. Polarizations up to 80% are observed--the highest reported so far for optical cooling in quantum dots. This value is still not limited by nuclear coherence effects. Instead we find that optically cooled nuclei are well described within a classical spin temperature framework. Our findings unlock a route for further progress towards quantum dot electron spin qubits where deep cooling of the mesoscopic nuclear spin ensemble is used to achieve long qubit coherence. Moreover, GaAs hyperfine material constants are measured here experimentally for the first time.

IMAGING WITH MULTIMODAL ADAPTIVE-OPTICS OPTICAL COHERENCE TOMOGRAPHY IN MULTIPLE EVANESCENT WHITE DOT SYNDROME: THE STRUCTURE AND FUNCTIONAL RELATIONSHIP.

Science.gov (United States)

Labriola, Leanne T; Legarreta, Andrew D; Legarreta, John E; Nadler, Zach; Gallagher, Denise; Hammer, Daniel X; Ferguson, R Daniel; Iftimia, Nicusor; Wollstein, Gadi; Schuman, Joel S

2016-01-01

To elucidate the location of pathological changes in multiple evanescent white dot syndrome (MEWDS) with the use of multimodal adaptive optics (AO) imaging. A 5-year observational case study of a 24-year-old female with recurrent MEWDS. Full examination included history, Snellen chart visual acuity, pupil assessment, intraocular pressures, slit lamp evaluation, dilated fundoscopic exam, imaging with Fourier-domain optical coherence tomography (FD-OCT), blue-light fundus autofluorescence (FAF), fundus photography, fluorescein angiography, and adaptive-optics optical coherence tomography. Three distinct acute episodes of MEWDS occurred during the period of follow-up. Fourier-domain optical coherence tomography and adaptive-optics imaging showed disturbance in the photoreceptor outer segments (PR OS) in the posterior pole with each flare. The degree of disturbance at the photoreceptor level corresponded to size and extent of the visual field changes. All findings were transient with delineation of the photoreceptor recovery from the outer edges of the lesion inward. Hyperautofluorescence was seen during acute flares. Increase in choroidal thickness did occur with each active flare but resolved. Although changes in the choroid and RPE can be observed in MEWDS, Fourier-domain optical coherence tomography, and multimodal adaptive optics imaging localized the visually significant changes seen in this disease at the level of the photoreceptors. These transient retinal changes specifically occur at the level of the inner segment ellipsoid and OS/RPE line. En face optical coherence tomography imaging provides a detailed, yet noninvasive method for following the convalescence of MEWDS and provides insight into the structural and functional relationship of this transient inflammatory retinal disease.

Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

Science.gov (United States)

Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

2017-02-20

We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s-1 directly modulated lasers and 40 Gb s-1 signal-regenerative amplifiers

International Nuclear Information System (INIS)

Sugawara, M; Hatori, N; Ishida, M; Ebe, H; Arakawa, Y; Akiyama, T; Otsubo, K; Yamamoto, T; Nakata, Y

2005-01-01

This paper presents recent progress in the field of semiconductor lasers and optical amplifiers with InAs-based self-assembled quantum dots in the active region for optical telecommunication. Based on our design in terms of the maximum bandwidth for high-speed modulation and p-type doping in quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb s -1 laser diodes on a GaAs substrate at 1.3 μm. The output waveform at 10 Gb s -1 maintained a clear eye opening, average output power and extinction ratio without current adjustments from 20 deg. C to 70 deg. C. We developed ultrawide-band high-power amplifiers in the 1.5 μm wavelength region on an InP substrate. The amplifier showed ultrafast gain response under gain saturation, and enabled signal regeneration at 40 Gb s -1 by suppressing the '1'-level noise due to the beating between the signal and amplified spontaneous emission. We present our amplifier module with polarization diversity to enable a stable polarization-insensitive performance, and also, discuss prospects for polarization-insensitive quantum dots by the close stacking technique

Photoluminescence study of carbon dots from ginger and galangal herbs using microwave technique

Science.gov (United States)

Isnaeni; Rahmawati, I.; Intan, R.; Zakaria, M.

2018-03-01

Carbon dots are new type of fluorescent nanoparticle that can be synthesis easily from natural sources. We have synthesized carbon dots from ginger and galangal herbs using microwave technique and studied their optical properties. We synthesized colloidal carbon dots in water solvent by varying microwave processing time. UV-Vis absorbance, photoluminescence, time-resolved photoluminescence, and transmission electron microscope were utilized to study properties of carbon dots. We found that microwave processing time significantly affect optical properties of synthesized carbon dots. UV-Vis absorbance spectra and time-resolved photoluminescence results show that luminescent of carbon dots is dominated by recombination process from n-π* surface energy level. With further development, these carbon dots are potential for several applications.

Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

International Nuclear Information System (INIS)

See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

2015-01-01

Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

International Nuclear Information System (INIS)

Tiutiunnyk, A.; Akimov, V.; Tulupenko, V.; Mora-Ramos, M.E.; Kasapoglu, E.; Ungan, F.; Sökmen, I.

2016-01-01

Electronic structure and optical properties in equilateral triangular GaAs/Al_0_._3Ga_0_._7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

DEFF Research Database (Denmark)

Chen, Miaoxiang Max; Kobashi, Kazufumi

2012-01-01

Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multis......Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist...

Robust adiabatic approach to optical spin entangling in coupled quantum dots

International Nuclear Information System (INIS)

Gauger, Erik M; Benjamin, Simon C; Lovett, Brendon W; Nazir, Ahsan; Stace, Thomas M

2008-01-01

Excitonic transitions offer a possible route to ultrafast optical spin manipulation in coupled nanostructures. We perform here a detailed study of the three principal exciton-mediated decoherence channels for optically controlled electron spin qubits in coupled quantum dots: radiative decay of the excitonic state, exciton-phonon interactions, and Landau-Zener transitions between laser-dressed states. We consider a scheme for producing an entangling controlled-phase gate on a pair of coupled spins which, in its simplest dynamic form, renders the system subject to fast decoherence rates associated with exciton creation during the gating operation. In contrast, we show that an adiabatic approach employing off-resonant laser excitation allows us to suppress all sources of decoherence simultaneously, significantly increasing the fidelity of operations at only a relatively small gating time cost. We find that controlled-phase gates accurate to one part in 10 2 can realistically be achieved with the adiabatic approach, whereas the conventional dynamic approach does not appear to support a fidelity suitable for scalable quantum computation. Our predictions could be demonstrated experimentally in the near future

Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad

Science.gov (United States)

Chai, Zhaoer; Wang, Qi; Cao, Jiawei; Mao, Guoming; Liu, Hao; Ren, Xiaomin; Maleev, Nikolai A.; Vasil'ev, Alexey P.; Zhukov, Alexey E.; Ustinov, Victor M.

2018-02-01

We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots ( 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, aiming to separate the tube from GaAs substrate and thus to decrease the substrate loss, which finally enables lasing with ultralow threshold power ( 4 µW) from an microtube ring resonator.

Numerical simulation of optical feedback on a quantum dot lasers

Energy Technology Data Exchange (ETDEWEB)

Al-Khursan, Amin H., E-mail: ameen_2all@yahoo.com [Thi-Qar University, Nassiriya Nanotechnology Research Laboratory (NNRL), Science College (Iraq); Ghalib, Basim Abdullattif [Babylon University, Laser Physics Department, Science College for Women (Iraq); Al-Obaidi, Sabri J. [Al-Mustansiriyah University, Physics Department, Science College (Iraq)

2012-02-15

We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

High-order optical nonlinearities in nanocomposite films dispersed with semiconductor quantum dots at high concentrations

International Nuclear Information System (INIS)

Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing

2017-01-01

We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process. (paper)

Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

Science.gov (United States)

Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

2017-12-01

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

Donor impurity states and related optical response in a lateral coupled dot-ring system under applied electric field

Energy Technology Data Exchange (ETDEWEB)

Correa, J.D. [Departamento de Ciencias Básicas, Universidad de Medellín, Medellín (Colombia); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

2015-09-01

A study on the effects of an externally applied electric field on the linear optical absorption and relative refractive index change associated with transitions between off-center donor impurity states in laterally coupled quantum dot-ring system is reported. Electron states are calculated within the effective mass and parabolic band approximations by means of an exact diagonalization procedure. The states and the optical response in each case show significant sensitivity to the geometrical distribution of confining energies as well as to the strength of the applied field.

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

Energy Technology Data Exchange (ETDEWEB)

Tiutiunnyk, A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Akimov, V. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Universidad de Medellín, Carrera 87 No 30-65 Medellín (Colombia); Tulupenko, V. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Kasapoglu, E. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Ungan, F. [Cumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas (Turkey); Sökmen, I. [Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir (Turkey); and others

2016-03-01

Electronic structure and optical properties in equilateral triangular GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Donor impurity states and related optical response in a lateral coupled dot-ring system under applied electric field

International Nuclear Information System (INIS)

Correa, J.D.; Mora-Ramos, M.E.; Duque, C.A.

2015-01-01

A study on the effects of an externally applied electric field on the linear optical absorption and relative refractive index change associated with transitions between off-center donor impurity states in laterally coupled quantum dot-ring system is reported. Electron states are calculated within the effective mass and parabolic band approximations by means of an exact diagonalization procedure. The states and the optical response in each case show significant sensitivity to the geometrical distribution of confining energies as well as to the strength of the applied field

Optical Studies of Single Quantum Dots

National Research Council Canada - National Science Library

Gammon, Daniel; Steel, Duncan G

2002-01-01

...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...

Low-photon-number optical switch and AND/OR logic gates based on quantum dot-bimodal cavity coupling system.

Science.gov (United States)

Ma, Shen; Ye, Han; Yu, Zhong-Yuan; Zhang, Wen; Peng, Yi-Wei; Cheng, Xiang; Liu, Yu-Min

2016-01-11

We propose a new scheme based on quantum dot-bimodal cavity coupling system to realize all-optical switch and logic gates in low-photon-number regime. Suppression of mode transmission due to the destructive interference effect is theoretically demonstrated by driving the cavity with two orthogonally polarized pulsed lasers at certain pulse delay. The transmitted mode can be selected by designing laser pulse sequence. The optical switch with high on-off ratio emerges when considering one driving laser as the control. Moreover, the AND/OR logic gates based on photon polarization are achieved by cascading the coupling system. Both proposed optical switch and logic gates work well in ultra-low energy magnitude. Our work may enable various applications of all-optical computing and quantum information processing.

Optical Waveguide Lightmode Spectroscopy (OWLS) as a Sensor for Thin Film and Quantum Dot Corrosion

OpenAIRE

Yu, Hao; Eggleston, Carrick M.; Chen, Jiajun; Wang, Wenyong; Dai, Qilin; Tang, Jinke

2012-01-01

Optical waveguide lightmode spectroscopy (OWLS) is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs) intended for solar energy applications. In addition to changes in data treatment and experimental procedure, oxide- or QD-coated waveguide sensors must be synthesized. We synthesi...

Theoretical analysis of four wave mixing in quantum dot optical amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2003-01-01

The four wave mixing properties of semiconductor quantum dot amplifiers have been investigated. The combination of strong non-equilibrium depletion of dot levels and a small linewidth enhancement factor results in efficient and symmetric four wave mixing.......The four wave mixing properties of semiconductor quantum dot amplifiers have been investigated. The combination of strong non-equilibrium depletion of dot levels and a small linewidth enhancement factor results in efficient and symmetric four wave mixing....

New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

International Nuclear Information System (INIS)

Alonso-Gonzalez, Pablo; Gonzalez, Luisa; Gonzalez, Yolanda; Fuster, David; Fernandez-Martinez, Ivan; Martin-Sanchez, Javier; Abelmann, Leon

2007-01-01

This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates

Artful and multifaceted applications of carbon dot in biomedicine.

Science.gov (United States)

Jaleel, Jumana Abdul; Pramod, K

2018-01-10

Carbon dots (C-dots) are luminescent carbon nanomaterial having good biocompatibility and low toxicity. The characteristic fluorescence emission property of C-dots establishes their role in optical imaging. C-dots which are superior to fluorescent dyes and semiconductor quantum dots act as a safer in vivo imaging probe. Apart from their bioimaging application, other applications in biomedicine such as drug delivery, cancer therapy, and gene delivery were studied. In this review, we present multifaceted applications of C-dots along with their synthesis, surface passivation, doping, and toxicity profile. Copyright © 2017 Elsevier B.V. All rights reserved.

Nanocrystal quantum dots

CERN Document Server

Klimov, Victor I

2010-01-01

""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

Non-blinking quantum dot with a plasmonic nanoshell resonator

Science.gov (United States)

Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

2015-02-01

Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

Detecting strain wave propagation through quantum dots by pump-probe spectroscopy: A theoretical analysis

International Nuclear Information System (INIS)

Huneke, J; Kuhn, T; Axt, V M

2010-01-01

The influence of strain waves traveling across a quantum dot structure on its optical response is studied for two different situations: First, a strain wave is created by the optical excitation of a single quantum dot near a surface which, after reflection at the surface, reenters the dot; second, a phonon wave packet is emitted by the excitation of a nearby second dot and then travels across the quantum dot. Pump-probe type excitations are simulated for quantum dots in the strong confinement limit. We show that the optical signals allow us to monitor crossing strain waves for both structures in the real-time response as well as in the corresponding pump-probe spectra. In the time-derivative of the phase of the polarization a distinct trace reflects the instantaneous shifts of the transition energy during the passage while in the spectra pronounced oscillations reveal the passage of the strain waves.

Using Guided Reinvention to Develop Teachers' Understanding of Hypothesis Testing Concepts

Science.gov (United States)

Dolor, Jason; Noll, Jennifer

2015-01-01

Statistics education reform efforts emphasize the importance of informal inference in the learning of statistics. Research suggests statistics teachers experience similar difficulties understanding statistical inference concepts as students and how teacher knowledge can impact student learning. This study investigates how teachers reinvented an…

Giant nonlinear interaction between two optical beams via a quantum dot embedded in a photonic wire

Science.gov (United States)

Nguyen, H. A.; Grange, T.; Reznychenko, B.; Yeo, I.; de Assis, P.-L.; Tumanov, D.; Fratini, F.; Malik, N. S.; Dupuy, E.; Gregersen, N.; Auffèves, A.; Gérard, J.-M.; Claudon, J.; Poizat, J.-Ph.

2018-05-01

Optical nonlinearities usually appear for large intensities, but discrete transitions allow for giant nonlinearities operating at the single-photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here, we demonstrate a two-mode giant nonlinearity with a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. We exploit two detuned optical transitions associated with the exciton-biexciton QD level scheme. Owing to the broadband waveguide antenna, the two transitions are efficiently interfaced with two free-space laser beams. The reflection of one laser beam is then controlled by the other beam, with a threshold power as low as 10 photons per exciton lifetime (1.6 nW ). Such a two-color nonlinearity opens appealing perspectives for the realization of ultralow-power logical gates and optical quantum gates, and could also be implemented in an integrated photonic circuit based on planar waveguides.

Carrier-phonon interaction in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Seebeck, Jan

2009-03-10

In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

An insight into the optical properties of CdSe quantum dots during their growth in bovine serum albumin solution

International Nuclear Information System (INIS)

Singh, Avinash; Ahmed, M.; Guleria, A.; Singh, A.K.; Adhikari, S.; Rath, M.C.

2016-01-01

Bovine serum albumin (BSA) assisted synthesis of cadmium selenide (CdSe) quantum dots (QDs) exhibits remarkable changes in the optical properties of the QDs as well as BSA during their growth. The growth of these QDs was investigated by recording the UV–visible absorption spectra and room temperature steady state fluorescence at different time intervals after the mixing of the precursors. The growth of these QDs was associated with a quenching of the fluorescence from BSA. The fluorescence from these QDs was found to be associated with several features: (1) a gradual red-shift in its peak position, (2) increase in intensity with an isoemissive point up to few minutes from the time of mixing of the two precursors, and (3) subsequent decrease in intensity reaching a minimum value, which remains almost unchanged thereafter. The decrease and increase in the fluorescence from BSA and CdSe QDs, respectively have been explained on the basis of Förster resonance energy transfer (FRET) as well as the simultaneous growth of these QDs. - Highlights: • CdSe quantum dots were synthesized in the presence of bovine serum albumin (BSA). • Fluorescence from BSA was quenched by during the growth of CdSe quantum dots. • There was an energy transfer from BSA to CdSe quantum dots during their growth. • The emission from CdSe quantum dots was associated with a red-shift.

Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

DEFF Research Database (Denmark)

Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

2010-01-01

We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

Temperature dependence of the optical absorption spectra of InP/ZnS quantum dots

Science.gov (United States)

Savchenko, S. S.; Vokhmintsev, A. S.; Weinstein, I. A.

2017-03-01

The optical-absorption spectra of InP/ZnS (core/shell) quantum dots have been studied in a broad temperature range of T = 6.5-296 K. Using the second-order derivative spectrophotometry technique, the energies of optical transitions at room temperature were found to be E 1 = 2.60 ± 0.02 eV (for the first peak of excitonic absorption in the InP core) and E 2 = 4.70 ± 0.02 eV (for processes in the ZnS shell). The experimental curve of E 1( T) has been approximated for the first time in the framework of a linear model and in terms of the Fan's formula. It is established that the temperature dependence of E 1 is determined by the interaction of excitons and longitudinal acoustic phonons with hω = 15 meV.

Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires

International Nuclear Information System (INIS)

Anufriev, Roman; Bru-Chevallier, Catherine; Chauvin, Nicolas; Barakat, Jean-Baptiste; Letartre, Xavier; Gendry, Michel; Patriarche, Gilles; Harmand, Jean-Christophe

2015-01-01

The emission polarization of single InAs/InP quantum dot (QD) and quantum rod (QR) nanowires is investigated at room temperature. Whereas the emission of the QRs is mainly polarized parallel to the nanowire axis, the opposite behavior is observed for the QDs. These optical properties can be explained by a combination of dielectric effects related to the nanowire geometry and to the configuration of the valence band in the nanostructure. A theoretical model and finite difference in time domain calculations are presented to describe the impact of the nanowire and the surroundings on the optical properties of the emitter. Using this model, the intrinsic degree of linear polarization of the two types of emitters is extracted. The strong polarization anisotropies indicate a valence band mixing in the QRs but not in the QDs. (paper)

Photovoltaic Performance of Inverted Polymer Solar Cells Using Hybrid Carbon Quantum Dots and Absorption Polymer Materials

Science.gov (United States)

Lim, Hwain; Lee, Kyu Seung; Liu, Yang; Kim, Hak Yong; Son, Dong Ick

2018-05-01

We report the synthesis and characterization of the carbon quantum dots (C-dots) easily obtained from citric acid and ethanediamine, and also investigated structural, optical and electrical properties. The C-dots have extraordinary optical and electrical features such as absorption of ultraviolet range and effective interface for charge separation and transport in active layer, which make them attractive materials for applications in photovoltaic devices (PV). The C-dots play important roles in charge extraction in the PV structures, they can be synthesized by a simple method and used to insert in active layer of polymer solar cells. In this study, we demonstrate that improve charge transport properties of inverted polymer solar cells (iPSCs) with C-dots and structural, optical and electrical properties of C-dots. As a result, iPSCs with C-dots showed enhancement of more than 30% compared with that of the contrast device in power conversion efficiency.

The Wheel of Business Model Reinvention: How to Reshape Your Business Model and Organizational Fitness to Leapfrog Competitors

OpenAIRE

Voelpel, Sven C.; Leibold, Marius; Tekie, Eden B.

2003-01-01

In today's rapidly changing business landscapes, new sources of sustainable competitive advantage can often only be attained from business model reinvention, based on disruptive innovation and not incremental change or continuous improvement. Extant literature indicates that business models and their reinvention have recently been the focus of scholarly investigations in the field of strategic management, especially focusing on the search for new bases of building strategic competitive advant...

Tuning optical properties of water-soluble CdTe quantum dots for biological applications

Energy Technology Data Exchange (ETDEWEB)

Schulze, Anne S.; Tavernaro, Isabella; Machka, Friederike [Justus-Liebig-University Giessen, Institute of Inorganic and Analytical Chemistry (Germany); Dakischew, Olga; Lips, Katrin S. [Justus-Liebig-University Giessen, Laboratory of Experimental Trauma Surgery (Germany); Wickleder, Mathias S., E-mail: mathias.wickleder@anorg.chemie.uni-giessen.de [Justus-Liebig-University Giessen, Institute of Inorganic and Analytical Chemistry (Germany)

2017-02-15

In this study, two different synthetic methods in aqueous solution are presented to tune the optical properties of CdTe and CdSe semiconductor nanoparticles. Additionally, the influence of different temperatures, pressures, precursor ratios, surface ligands, bases, and core components in the synthesis was investigated with regard to the particle sizes and optical properties. As a result, a red shift of the emission and absorption maxima with increasing reaction temperature (100 to 220°C), pressure (1 to 25 bar), and different ratios of core components of alloyed semiconductor nanoparticles could be observed without a change of the particle size. An increase in particle size from 2.5 to 5 nm was only achieved by variation of the mercaptocarboxylic acid ligands in combination with the reaction time and used base. To get a first hint on the cytotoxic effects and cell uptake of the synthesized quantum dots, in vitro tests mesenchymal stem cells (MSCs) were carried out.

Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

International Nuclear Information System (INIS)

Birman, Joseph L.; Huong, Nguyen Que

2007-01-01

The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

DEFF Research Database (Denmark)

Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

2011-01-01

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological...... and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical...... characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

International Nuclear Information System (INIS)

Kadkhodazadeh, S; Dunin-Borkowski, R E; Semenova, E S; Schubert, M; Yvind, K; Thuvander, M; Stiller, K M

2011-01-01

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

Characterization of CuCl quantum dots grown in NaCl single crystals via optical measurements, X-ray diffraction, and transmission electron microscopy

Science.gov (United States)

Miyajima, Kensuke; Akatsu, Tatsuro; Itoh, Ken

2018-05-01

We evaluated the crystal size, shape, and alignment of the lattice planes of CuCl quantum dots (QDs) embedded in NaCl single crystals by optical measurements, X-ray diffraction (XRD) patterns, and transmission electron microscopy (TEM). We obtained, for the first time, an XRD pattern and TEM images for CuCl QDs in NaCl crystals. The XRD pattern showed that the lattice planes of the CuCl QDs were parallel to those of the NaCl crystals. In addition, the size of the QDs was estimated from the diffraction width. It was apparent from the TEM images that almost all CuCl QDs were polygonal, although some cubic QDs were present. The mean size and size distribution of the QDs were also obtained. The dot size obtained from optical measurements, XRD, and TEM image were almost consistent. Our new findings can help to reveal the growth mechanism of semiconductor QDs embedded in a crystallite matrix. In addition, this work will play an important role in progressing the study of optical phenomena originating from assembled semiconductor QDs.

The effect of near laterally and vertically neighboring quantum dots on the composition of uncapped InxGa1−xAs/GaAs quantum dots

International Nuclear Information System (INIS)

Donglin, Wang; Zhongyuan, Yu; Yumin, Liu; Han, Ye; Pengfei, Lu; Xiaotao, Guo; Long, Zhao; Xia, Xin

2010-01-01

The composition of quantum dots has a direct effect on the optical and electronic properties of quantum-dot-based devices. In this paper, we combine the method of moving asymptotes and finite element tools to compute the composition distribution by minimizing the Gibbs free energy of quantum dots, and use this method to study the effect of near laterally and vertically neighboring quantum dots on the composition distribution. The simulation results indicate that the effect from the laterally neighboring quantum dot is very small, and the vertically neighboring quantum dot can significantly influence the composition by the coupled strain field

Ultrafast optical signal processing using semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....

Room-Temperature Dephasing in InAs Quantum Dots

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

2000-01-01

The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection......, a dephasing time of ~260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due...

75 FR 60091 - Science and Technology Reinvention Laboratory Personnel Management Demonstration Project...

Science.gov (United States)

2010-09-29

... DEPARTMENT OF DEFENSE Office of the Secretary Science and Technology Reinvention Laboratory Personnel Management Demonstration Project, Department of the Army, Army Research, Development and... project; correction. SUMMARY: On September 9, 2010 (75 FR 55199), DoD published a notice concerning the...

To Tell a New Story: Reinventing Narratives of Culture, Identity, and Education.

Science.gov (United States)

Florio-Ruane, Susan

1997-01-01

Reflects on stories educators tell about culture, identity, and education. If stories of self are to help educators reform institutions or build new communities, they must be reinvented to embrace others rather than to defend against contact with others. (SLD)

76 FR 67154 - Science and Technology Reinvention Laboratory Personnel Management Demonstration Program

Science.gov (United States)

2011-10-31

... to eight legacy Science and Technology Reinvention Laboratory (STRL) Personnel Management Demonstration (demo) Project Plans resulting from section 1107(c) of the National Defense Authorization Act... flexibilities, modifying demo project plans, or executing Federal Register Notices has identified some areas for...

Anisotropic electro-optic effect on InGaAs quantum dot chain modulators.

Science.gov (United States)

Liu, Wei; Liang, Baolai; Huffaker, Diana; Fetterman, Harold

2013-10-15

We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3 pm/V (33.8 pm/V) along the [011] direction and 30.6 pm/V (40.3 pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

A fusion-spliced near-field optical fiber probe using photonic crystal fiber for nanoscale thermometry based on fluorescence-lifetime measurement of quantum dots.

Science.gov (United States)

Fujii, Takuro; Taguchi, Yoshihiro; Saiki, Toshiharu; Nagasaka, Yuji

2011-01-01

We have developed a novel nanoscale temperature-measurement method using fluorescence in the near-field called fluorescence near-field optics thermal nanoscopy (Fluor-NOTN). Fluor-NOTN enables the temperature distributions of nanoscale materials to be measured in vivo/in situ. The proposed method measures temperature by detecting the temperature dependent fluorescence lifetimes of Cd/Se quantum dots (QDs). For a high-sensitivity temperature measurement, the auto-fluorescence generated from a fiber probe should be reduced. In order to decrease the noise, we have fabricated a novel near-field optical-fiber probe by fusion-splicing a photonic crystal fiber (PCF) and a conventional single-mode fiber (SMF). The validity of the novel fiber probe was assessed experimentally by evaluating the auto-fluorescence spectra of the PCF. Due to the decrease of auto-fluorescence, a six- to ten-fold increase of S/N in the near-field fluorescence lifetime detection was achieved with the newly fabricated fusion-spliced near-field optical fiber probe. Additionally, the near-field fluorescence lifetime of the quantum dots was successfully measured by the fabricated fusion-spliced near-field optical fiber probe at room temperature, and was estimated to be 10.0 ns.

Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

International Nuclear Information System (INIS)

Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

2014-01-01

Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

Millimeter Wave Modulators Using Quantum Dots

National Research Council Canada - National Science Library

Prather, Dennis W

2008-01-01

In this effort electro-optic modulators for millimeter wave sensing and imaging were developed and demonstrated via design, fabrication, and experimental characterization of multi layer quantum dot...

Photoluminescence studies of single InGaAs quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

1999-01-01

Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

Modeling of semiconductor optical amplifiers

DEFF Research Database (Denmark)

Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

Metamorphic quantum dots: Quite different nanostructures

International Nuclear Information System (INIS)

Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

2010-01-01

In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

Pulse interactions in a quantum dot waveguide in the regime of electromagnetically Induced transparency

DEFF Research Database (Denmark)

Nielsen, Per; Nielsen, Henri; Mørk, Jesper

2006-01-01

The interaction of optical pulses in a quantum dot waveguide in the slow-light regime is investigated. Dipole oscillations lead to strong interactions between the two pulses, implying a minimum pulse separation for optical buffer applications.......The interaction of optical pulses in a quantum dot waveguide in the slow-light regime is investigated. Dipole oscillations lead to strong interactions between the two pulses, implying a minimum pulse separation for optical buffer applications....

25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

International Nuclear Information System (INIS)

Zeghuzi, A.; Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.

2015-01-01

Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation

Improvement of characteristics of diffraction gratings in Dot-matrix holograms

International Nuclear Information System (INIS)

ZHUMALIEV, K.M.; ISMAILOV, D.A.; ZHEENBEKOV, A.A.; SARYBAEVA, A.A.; KAZAKBAEVA, Z.M.

2014-01-01

This paper describes the results of research of the formation and recording of matrix hologram by Dot-matrix (dot-matrix hologram) technology on the photosensitive material of the photoresist. The principle of creating and modifying the characteristics of diffraction gratings of each pixel based on the diffraction efficiency, and recovery of colors and dynamic visual effects in dot-matrix holograms are discussed. An optical schematic diagram of the device and the process of recording dot-matrix holograms are presented. (authors)

Electroluminescence of colloidal ZnSe quantum dots

International Nuclear Information System (INIS)

Dey, S.C.; Nath, S.S.

2011-01-01

The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

Photoluminescence of carbon dots from mesoporous silica

Science.gov (United States)

Nelson, D. K.; Razbirin, B. S.; Starukhin, A. N.; Eurov, D. A.; Kurdyukov, D. A.; Stovpiaga, E. Yu; Golubev, V. G.

2016-09-01

Photophysical properties of carbon dots were investigated under various excitation conditions and over a wide temperature region - from room to liquid helium temperatures. The carbon dots (CDs) were synthesized using mesoporous silica particles as a reactor and (3-aminopropyl)triethoxysilane (APTES) as a precursor. The photoluminescence spectra of CDs exhibit a strong dependence on the excitation wavelength and demonstrate a significant inhomogeneous broadening. Lowering sample temperature reveals the doublet structure of the spectra, which is associated with the vibronic structure of radiative transitions. The vibration energy ∼1200 cm-1 is close to the energy of Csbnd O stretching vibration. Long-lived phosphorescence of carbon dots with its decay time ∼0.2 s at T = 80 K was observed. The fluorescence and phosphorescence spectra are shown to be spectrally separated. The long-lived component of the emission was ascribed to optically forbidden triplet-singlet transitions. The value of the singlet-triplet splitting was found to be about 0.3 eV. Photo-induced polarization of the luminescence of carbon dots was revealed. The degree of the linear polarization is dependent on the wavelengths of both excitation and emitted light. The effect indicates a hidden anisotropy of optical dipole transitions in the dots and demonstrates the loss of the dipole orientation during the electron energy relaxation.

Atomistic theory of excitonic fine structure in InAs/InP nanowire quantum dot molecules

Science.gov (United States)

Świderski, M.; Zieliński, M.

2017-03-01

Nanowire quantum dots have peculiar electronic and optical properties. In this work we use atomistic tight binding to study excitonic spectra of artificial molecules formed by a double nanowire quantum dot. We demonstrate a key role of atomistic symmetry and nanowire substrate orientation rather than cylindrical shape symmetry of a nanowire and a molecule. In particular for [001 ] nanowire orientation we observe a nonvanishing bright exciton splitting for a quasimolecule formed by two cylindrical quantum dots of different heights. This effect is due to interdot coupling that effectively reduces the overall symmetry, whereas single uncoupled [001 ] quantum dots have zero fine structure splitting. We found that the same double quantum dot system grown on [111 ] nanowire reveals no excitonic fine structure for all considered quantum dot distances and individual quantum dot heights. Further we demonstrate a pronounced, by several orders of magnitude, increase of the dark exciton optical activity in a quantum dot molecule as compared to a single quantum dot. For [111 ] systems we also show spontaneous localization of single particle states in one of nominally identical quantum dots forming a molecule, which is mediated by strain and origins from the lack of the vertical inversion symmetry in [111 ] nanostructures of overall C3 v symmetry. Finally, we study lowering of symmetry due to alloy randomness that triggers nonzero excitonic fine structure and the dark exciton optical activity in realistic nanowire quantum dot molecules of intermixed composition.

Optical performance evolutions of reductive glutathione coated CdSe quantum dots in different environments

International Nuclear Information System (INIS)

Wang Lili; Jiang Jisen

2011-01-01

Optical performances of reductive glutathione coated CdSe quantum dots were studied under different ageing conditions. The enhancements of luminescence were obviously occurred for the samples ageing under illumination. The quantum yield of CdSe was enhanced continuously over 44 days at room temperature, and reached as high as 36.6%. O 2 was proved to make a certain contribute to the enhancement. The evolutions of the systems during the ageing time were deduced according to the variations of pH values with ageing time and the XRD results of the samples ageing in air with illumination. We conferred that the reduction of surface defects resulted from the photo-induced decomposition of CdSe quantum dots was the main reason for the enhancement of fluorescence. The production of CdO as a result of the surface reaction with O 2 made contributions to the enhancement for a certain extent. The curves of quantum yield versus ageing time were fitted with a stretched exponential function. It was found that the course of fluorescence enhancement accorded with the dynamics of system with strongly coupled hierarchical degrees of freedom.

Using of Quantum Dots in Biology and Medicine.

Science.gov (United States)

Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

2018-01-01

Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

Quantum Dots and Their Multimodal Applications: A Review

Directory of Open Access Journals (Sweden)

Paul H. Holloway

2010-03-01

Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

Spin interactions in InAs quantum dots

Science.gov (United States)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Synthesis, Optical, and Magnetic Properties of Graphene Quantum Dots and Iron Oxide Nanocomposites

Directory of Open Access Journals (Sweden)

M. Sajjad

2018-01-01

Full Text Available The combination of nanomaterial graphene quantum dots (GQDs with magnetic nanoparticles offers a unique set of optical and magnetic properties for future energy and medical applications. We report on the synthesis and engineering of GQDs and iron oxide (Fe3O4 nanocomposites (NCs by using a pulsed laser discharge technique. High-resolution transmission electron microscopy (HRTEM images showed a high yield of pure GQDs with 2–10 nm diameter. The hexagonal structures and lattice fringes associated with the C–C bond in GQDs were clearly identifiable. The structural and optical changes in GQDs and GQDs-Fe3O4 NC samples induced by UV light were investigated by the absorption and emission spectroscopy over the deep UV–visible spectral range. The photoluminescence spectra have shown subband π→π∗ transitions in GQDs-Fe3O4 NC. Magnetic properties of the GQDs-Fe3O4 NC samples have shown room temperature ferromagnetism induced by pure Fe3O4 nanoparticles and from the substantial spin polarized edges of GQD nanoparticles. It is concluded that the observed optical and magnetic properties could be further tailored in the studied nanocomposites for prospective medical applications.

Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption

International Nuclear Information System (INIS)

Kim, Jungsub; Yang, Changjae; Sim, Uk; Lee, Jaeyel; Yoon, Euijoon; Lee, Youngsoo

2009-01-01

We investigated the morphological and optical properties of InAs quantum dots (QDs) grown by using periodic arsine interruption (PAI) and compared them with QDs grown conventionally. In the conventional growth, the formation of large islands was observed, which suppresses the nucleation and growth of QDs. Furthermore, the growth of capping layers was significantly degraded by these large islands. On the other hand, in the PAI growth, the formation of large islands was completely suppressed, resulting in the increase of the density and aspect ratio of QDs and the uniform growth of capping layers. As a result of photoluminescence (PL) measurements, we found that the emission efficiency was enhanced and the full-width-half-maximum was reduced to 32 meV. The temperature dependence of these optical properties also revealed the enhancement of the uniformity of QDs grown by the PAI method.

Whispering-gallery mode microcavity quantum-dot lasers

International Nuclear Information System (INIS)

Kryzhanovskaya, N V; Maximov, M V; Zhukov, A E

2014-01-01

This review examines axisymmetric-cavity quantum-dot microlasers whose emission spectrum is determined by whisperinggallery modes. We describe the possible designs, fabrication processes and basic characteristics of the microlasers and demonstrate the possibility of lasing at temperatures above 100 °C. The feasibility of creating multichannel optical sources based on a combination of a broadband quantum-dot laser and silicon microring modulators is discussed. (review)

Theory of nonlinear optical response of ensembles of double quantum dots

Science.gov (United States)

Sitek, Anna; Machnikowski, Paweł

2009-09-01

We study theoretically the time-resolved four-wave mixing (FWM) response of an ensemble of pairs of quantum dots undergoing radiative recombination. At short (picosecond) delay times, the response signal shows beats that may be dominated by the subensemble of resonant pairs, which gives access to the information on the interdot coupling. At longer delay times, the decay of the FWM signal is governed by two rates which result from the collective interaction between the two dots and the radiation modes. The two rates correspond to the subradiant and super-radiant components in the radiative decay. Coupling between the dots enhances the collective effects and makes them observable even when the average energy mismatch between the dots is relatively large.

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

International Nuclear Information System (INIS)

Kim, Jungho; Yu, Bong-Ahn

2015-01-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases. (paper)

Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

Science.gov (United States)

Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

2017-03-08

Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

Controlling the exciton energy of a nanowire quantum dot by strain fields

Energy Technology Data Exchange (ETDEWEB)

Chen, Yan; Zhang, Jiaxiang; Ding, Fei, E-mail: f.ding@ifw-dresden.de [Institute for Integrative Nanosciences, IFW Dresden, Helmholtz Strasse 20, 01069 Dresden (Germany); Zadeh, Iman Esmaeil; Jöns, Klaus D.; Fognini, Andreas; Zwiller, Val [Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands); Reimer, Michael E. [Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, N2L 3G1 (Canada); Dalacu, Dan; Poole, Philip J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtz Strasse 20, 01069 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer Strasse 70, 09107 Chemnitz (Germany)

2016-05-02

We present an experimental route to engineer the exciton energies of single quantum dots in nanowires. By integrating the nanowires onto a piezoelectric crystal, we controllably apply strain fields to the nanowire quantum dots. Consequently, the exciton energy of a single quantum dot in the nanowire is shifted by several meVs without degrading its optical intensity and single-photon purity. Second-order autocorrelation measurements are performed at different strain fields on the same nanowire quantum dot. The suppressed multi-photon events at zero time delay clearly verify that the quantum nature of single-photon emission is well preserved under external strain fields. The work presented here could facilitate on-chip optical quantum information processing with the nanowire based single photon emitters.

Linear and nonlinear absorption coefficients of spherical quantum dot inside external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Çakır, Bekir, E-mail: bcakir@selcuk.edu.tr [Physics Department, Faculty of Science, Selcuk University, Campus, 42075 Konya (Turkey); Yakar, Yusuf, E-mail: yuyakar@yahoo.com [Physics Department, Faculty of Arts and Science, Aksaray University, Campus, 68100 Aksaray (Turkey); Özmen, Ayhan [Physics Department, Faculty of Science, Selcuk University, Campus, 42075 Konya (Turkey)

2017-04-01

We have calculated the wavefunctions and energy eigenvalues of spherical quantum dot with infinite potential barrier inside uniform magnetic field. In addition, we have investigated the magnetic field effect on optical transitions between Zeeman energy states. The results are expressed as a function of dot radius, incident photon energy and magnetic field strength. The results present that, in large dot radii, the external magnetic field affects strongly the optical transitions between Zeeman states. In the strong spatial confinement case, energy level is relatively insensitive to the magnetic field, and electron spatial confinement prevails over magnetic confinement. Also, while m varies from −1 to +1, the peak positions of the optical transitions shift toward higher energy (blueshift).

The radioluminescence and optical behaviour of nanocomposites with CdSeS quantum dot

Energy Technology Data Exchange (ETDEWEB)

Keskin, İ.Ç., E-mail: ilkercetinkeskin@hotmail.com [Department of Physics, Faculty of Art and Science, Celal Bayar University, Manisa-Turkey (Turkey); Türemiş, M. [Department of Physics, Faculty of Art and Science, Celal Bayar University, Manisa-Turkey (Turkey); Katı, M.İ. [Experimental Science Applications and Research Center, Celal Bayar University, Manisa (Turkey); Kibar, R. [Department of Physics, Faculty of Art and Science, Celal Bayar University, Manisa-Turkey (Turkey); Şirin, K. [Department of Chemistry, Faculty of Art and Science, Celal Bayar University, Manisa-Turkey (Turkey); Çipiloğlu, M.A. [Department of Physics, Faculty of Art and Science, Celal Bayar University, Manisa-Turkey (Turkey); Kuş, M.; Büyükçelebi, S. [Advanced Technology Research and Application, Center Selcuk University, Konya (Turkey); Çetin, A. [Department of Physics, Faculty of Art and Science, Celal Bayar University, Manisa-Turkey (Turkey)

2017-05-15

In this work, highly luminescent alloyed CdSeS QDs are successfully synthesized by two phase route method by using oleic acid (OA) as a surfactant. OA capped CdSeS QDs prepared in two different synthesis duration were compared in terms of luminescence and optical properties. The nanocomposites blended with CdSeS QDs which have highly luminescent efficiency in different ratios by Low Density Polyethylene (LDPE) and these nanocomposites were mainly investigated radioluminescence (RL) and optical properties (UV/VIS absorption). Structural, morphological, thermal properties of the nanocrystal and nanocomposites were examined using; XRD, FT-IR, TEM, SEM, TG-DTA techniques. OA capped CdSeS and also nanocomposites were showed two RL spectrum peaks in green and red region at around 528 nm and 710 nm respectively. Also, it is seen that the radioluminescence intensity changes linearly with the particle size of the QDs and about 12% size change of quantum dot led to a threefold increase in RL intensity. The luminescence glow curves are in compliance with absorption and fluorescence spectra. The absorption bands showed a significant blue shift for the nanocomposites as compare to powder CdSeS. The optical band gap of the OA capped CdSeS calculated as 1.77 eV. It was observed that the optical band gap of LDPE was decreased by the adding ratio of CdSeS from 3.71 eV to 2.25 eV.

The radioluminescence and optical behaviour of nanocomposites with CdSeS quantum dot

International Nuclear Information System (INIS)

Keskin, İ.Ç.; Türemiş, M.; Katı, M.İ.; Kibar, R.; Şirin, K.; Çipiloğlu, M.A.; Kuş, M.; Büyükçelebi, S.; Çetin, A.

2017-01-01

In this work, highly luminescent alloyed CdSeS QDs are successfully synthesized by two phase route method by using oleic acid (OA) as a surfactant. OA capped CdSeS QDs prepared in two different synthesis duration were compared in terms of luminescence and optical properties. The nanocomposites blended with CdSeS QDs which have highly luminescent efficiency in different ratios by Low Density Polyethylene (LDPE) and these nanocomposites were mainly investigated radioluminescence (RL) and optical properties (UV/VIS absorption). Structural, morphological, thermal properties of the nanocrystal and nanocomposites were examined using; XRD, FT-IR, TEM, SEM, TG-DTA techniques. OA capped CdSeS and also nanocomposites were showed two RL spectrum peaks in green and red region at around 528 nm and 710 nm respectively. Also, it is seen that the radioluminescence intensity changes linearly with the particle size of the QDs and about 12% size change of quantum dot led to a threefold increase in RL intensity. The luminescence glow curves are in compliance with absorption and fluorescence spectra. The absorption bands showed a significant blue shift for the nanocomposites as compare to powder CdSeS. The optical band gap of the OA capped CdSeS calculated as 1.77 eV. It was observed that the optical band gap of LDPE was decreased by the adding ratio of CdSeS from 3.71 eV to 2.25 eV.

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

Science.gov (United States)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Linear and nonlinear magneto-optical properties of an off-center single dopant in a spherical core/shell quantum dot

Science.gov (United States)

Feddi, E.; Talbi, A.; Mora-Ramos, M. E.; El Haouari, M.; Dujardin, F.; Duque, C. A.

2017-11-01

Using the effective mass approximation and a variational procedure, we have investigated the nonlinear optical absorption coefficient and the relative refractive index changes associated to a single dopant confined in core/shell quantum dots considering the influences of the core/shell dimensions, externally applied magnetic field, and dielectric mismatch. The results show that the optical absorption coefficient and the coefficients of relative refractive index change depend strongly on the core/shell sizes and they are blue shifted when the spatial confinement increases so this effect is magnified by higher structural dimensions. Additionally, it is obtained that both studied optical properties are sensitive to the dielectric environment in such a way that their amplitudes are very affected by the local field corrections.

Tunneling induced dark states and the controllable resonance fluorescence spectrum in quantum dot molecules

International Nuclear Information System (INIS)

Tian, Si-Cong; Tong, Cun-Zhu; Ning, Yong-Qiang; Qin, Li; Liu, Yun; Wan, Ren-Gang

2014-01-01

Optical spectroscopy, a powerful tool for probing and manipulating quantum dots (QDs), has been used to investigate the resonance fluorescence spectrum from linear triple quantum dot molecules controlled by tunneling, using atomic physics methods. Interesting features such as quenching and narrowing of the fluorescence are observed. In such molecules the tunneling between the quantum dots can also induce a dark state. The results are explained by the transition properties of the dressed states generated by the coupling of the laser and the tunneling. Unlike the atomic system, in such quantum dot molecules quantum coherence can be induced using tunneling, requiring no coupling lasers, which will allow tunneling controllable quantum dot molecules to be applied to quantum optics and photonics. (paper)

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

KAUST Repository

Elafandy, Rami T.

2011-12-01

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

Entangled exciton states in quantum dot molecules

Science.gov (United States)

Bayer, Manfred

2002-03-01

Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

2015-02-07

Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

Templated self-assembly of SiGe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Dais, Christian

2009-08-19

-dimensional quantum dot crystals. The analyzed SiGe quantum dots have a type II band alignment, with holes confined in the dots and electrons confined in the strained Si in the surrounding of the dots. The recombination energy of these indirect excitons depends on size, Ge content and strain distribution of the quantum dots. It is shown that the structural uniformity of the created quantum dot structures is reflected in their optical properties, resulting in a narrow and stable photoluminescence emission with well separated no-phonon and transversal optical phonon lines. The narrow dot luminescence can be shifted by varying Ge coverage, dot size or dot period. Furthermore excitation-power dependent and temperature dependent photoluminescence measurements are discussed. Band structure calculations indicate that the electronic states of the quantum dot crystals are electronically coupled at least in vertical direction. For the quantum dot crystal with a lateral period of 35 nm even a coupling in all three dimensions is calculated. Thus, the three-dimensional dot arrangement represents not only from the structural but also from the electronic point of view an artificial crystal. (orig.)

Coulomb Mediated Hybridization of Excitons in Coupled Quantum Dots.

Science.gov (United States)

Ardelt, P-L; Gawarecki, K; Müller, K; Waeber, A M; Bechtold, A; Oberhofer, K; Daniels, J M; Klotz, F; Bichler, M; Kuhn, T; Krenner, H J; Machnikowski, P; Finley, J J

2016-02-19

We report Coulomb mediated hybridization of excitonic states in optically active InGaAs quantum dot molecules. By probing the optical response of an individual quantum dot molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single-particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic eight-band k·p calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial semiconductor molecule.

Quantum dynamics of spin qubits in optically active quantum dots

International Nuclear Information System (INIS)

Bechtold, Alexander

2017-01-01

The control of solid-state qubits for quantum information processing requires a detailed understanding of the mechanisms responsible for decoherence. During the past decade a considerable progress has been achieved for describing the qubit dynamics in relatively strong external magnetic fields. However, until now it has been impossible to experimentally test many theoretical predictions at very low magnetic fields and uncover mechanisms associated with reduced coherence times of spin qubits in solids. In particular, the role of the quadrupolar coupling of nuclear spins in this process is to date poorly understood. In the framework of this thesis, a spin memory device is utilized to optically prepare individual electron spin qubits in a single InGaAs quantum dot. After storages over timescales extending into the microsecond range the qubit��s state is read out to monitor the impact of the environment on it the spin dynamics. By performing such pump-probe experiments, the dominant electron spin decoherence mechanisms are identified in a wide range of external magnetic fields (0-5 T) and lattice temperatures of ∝10 K. The results presented in this thesis show that, without application of external magnetic fields the initially orientated electron spin rapidly loses its polarization due to precession around the fluctuating Overhauser field with a dispersion of 10.5 mT. The inhomogeneous dephasing time associated with these hyperfine mediated dynamics is of the order of T * 2 =2 ns. Over longer timescales, an unexpected stage of central spin relaxation is observed, namely the appearance of a second feature in the relaxation curve around T Q =750 ns. By comparison with theoretical simulations, this additional decoherence channel is shown to arise from coherent dynamics in the nuclear spin bath itself. Such coherent dynamics are induced by a quadrupolar coupling of the nuclear spins to the strain induced electric field gradients in the quantum dot. These processes

Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser

Science.gov (United States)

Raghunathan, R.; Olinger, J.; Hurtado, A.; Grillot, F.; Kovanis, V.; Lester, L. F.

2015-03-01

Recent work has shown the Quantum Dot (QD) material system to be well-suited to support dual-mode lasing. In particular, optical injection from a master laser (ML) into the residual Fabry-Perot (FP) modes of a 1310 nm Quantum Dot Distributed Feedback (QD-DFB) laser has been recently demonstrated to offer a highly reliable platform for stable dual-mode lasing operation. External controls on the ML, such as operating temperature and bias current, can be used to precisely adjust the spacing between the two lasing modes. This tunability of modeseparation is very promising for a range of applications requiring the generation of microwave, millimeter wave and terahertz signals. Considering the versatility and utility of such a scheme, it is imperative to acquire a deeper understanding of the factors that influence the dual-mode lasing process, in order to optimize performance. Toward this end, this paper seeks to further our understanding of the optically-injected dual-mode lasing mechanism. For fixed values of optical power injected into each FP residual mode and wavelength detuning, the dual-mode lasing characteristics are analyzed with regard to important system parameters such as the position and the intensity of the injected residual mode (relative to the Bragg and the other residual FP modes of the device) for two similarly-fabricated QD-DFBs. Results indicate that for dual mode lasing spaced less than 5 nm apart, the relative intensity of the injected FP mode and intracavity noise levels are critical factors in determining dual mode lasing behavior. Insight into the dual-mode lasing characteristics could provide an important design guideline for the master and QD-DFB slave laser cavities.

Entanglement purification and concentration of electron-spin entangled states using quantum-dot spins in optical microcavities

International Nuclear Information System (INIS)

Wang Chuan; Zhang Yong; Jin Guangsheng

2011-01-01

We present an entanglement purification protocol and an entanglement concentration protocol for electron-spin entangled states, resorting to quantum-dot spin and optical-microcavity-coupled systems. The parity-check gates (PCGs) constructed by the cavity-spin-coupling system provide a different method for the entanglement purification of electron-spin entangled states. This protocol can efficiently purify an electron ensemble in a mixed entangled state. The PCGs can also concentrate electron-spin pairs in less-entangled pure states efficiently. The proposed methods are more flexible as only single-photon detection and single-electron detection are needed.

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

Science.gov (United States)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

Growth and optical properties of CdTe quantum dots in ZnTe nanowires

Energy Technology Data Exchange (ETDEWEB)

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

The CEO's role in business model reinvention.

Science.gov (United States)

Govindarajan, Vijay; Trimble, Chris

2011-01-01

Fending off new competitors is a perennial struggle for established companies. Govindarajan and Trimble, of Dartmouth's Tuck School of Business, explain why: Many corporations become too comfortable with their existing business models and neglect the necessary work of radically reinventing them. The authors map out an alternative in their "three boxes" framework. They argue that while a CEO manages the present (box 1), he or she must also selectively forget the past (box 2) in order to create the future (box 3). Infosys chairman N.R. Narayana Murthy mastered the three boxes to reinvigorate his company and greatly increased its changes of enduring for generations.

Reinventing Organisations and the Future of Work

CERN Multimedia

CERN. Geneva

2016-01-01

Frédéric Laloux works as an adviser, coach, and facilitator for corporate leaders who feel called to explore fundamentally new ways of organizing. A former associate partner with McKinsey & Co., he holds an MBA from INSEAD. Frédéric Laloux is the author of the much talked about book "Reinventing Organizations". His fundamental research in the field of emerging organizational models has been described as ground-breaking, brilliant, spectacular, impressive, and world changing by some of the most respected scholars in the field of human development. youtu.be/gcS04BI2sbk

Quantum dot-polymer conjugates for stable luminescent displays.

Science.gov (United States)

Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

2018-05-23

The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

International Nuclear Information System (INIS)

Htoon, H.; Keto, J. W.; Baklenov, O.; Holmes, A. L. Jr.; Shih, C. K.

2000-01-01

By using a cross-sectional geometry, we show the capability to perform single-dot spectroscopy in self-assembled quantum dots using far-field optics. By using this method, we study the quantum-confined Stark effect in self-assembled quantum dots. For single-stack quantum dots (QDs), we find that the spectra are redshifted with an increase in electric field. For vertically coupled double-stack quantum dots, while most of the QDs are redshifted, some QDs show blueshifted spectra, which can be interpreted as an evidence of coupled QD molecules. (c) 2000 American Institute of Physics

Complete Coherent Control of a Quantum Dot Strongly Coupled to a Nanocavity

Science.gov (United States)

Dory, Constantin; Fischer, Kevin A.; Müller, Kai; Lagoudakis, Konstantinos G.; Sarmiento, Tomas; Rundquist, Armand; Zhang, Jingyuan L.; Kelaita, Yousif; Vučković, Jelena

2016-04-01

Strongly coupled quantum dot-cavity systems provide a non-linear configuration of hybridized light-matter states with promising quantum-optical applications. Here, we investigate the coherent interaction between strong laser pulses and quantum dot-cavity polaritons. Resonant excitation of polaritonic states and their interaction with phonons allow us to observe coherent Rabi oscillations and Ramsey fringes. Furthermore, we demonstrate complete coherent control of a quantum dot-photonic crystal cavity based quantum-bit. By controlling the excitation power and phase in a two-pulse excitation scheme we achieve access to the full Bloch sphere. Quantum-optical simulations are in good agreement with our experiments and provide insight into the decoherence mechanisms.

Complete Coherent Control of a Quantum Dot Strongly Coupled to a Nanocavity.

Science.gov (United States)

Dory, Constantin; Fischer, Kevin A; Müller, Kai; Lagoudakis, Konstantinos G; Sarmiento, Tomas; Rundquist, Armand; Zhang, Jingyuan L; Kelaita, Yousif; Vučković, Jelena

2016-04-26

Strongly coupled quantum dot-cavity systems provide a non-linear configuration of hybridized light-matter states with promising quantum-optical applications. Here, we investigate the coherent interaction between strong laser pulses and quantum dot-cavity polaritons. Resonant excitation of polaritonic states and their interaction with phonons allow us to observe coherent Rabi oscillations and Ramsey fringes. Furthermore, we demonstrate complete coherent control of a quantum dot-photonic crystal cavity based quantum-bit. By controlling the excitation power and phase in a two-pulse excitation scheme we achieve access to the full Bloch sphere. Quantum-optical simulations are in good agreement with our experiments and provide insight into the decoherence mechanisms.

Ultrafast light matter interaction in CdSe/ZnS core-shell quantum dots

Science.gov (United States)

Yadav, Rajesh Kumar; Sharma, Rituraj; Mondal, Anirban; Adarsh, K. V.

2018-04-01

Core-shell quantum dot are imperative for carrier (electron and holes) confinement in core/shell, which provides a stage to explore the linear and nonlinear optical phenomena at the nanoscalelimit. Here we present a comprehensive study of ultrafast excitation dynamics and nonlinear optical absorption of CdSe/ZnS core shell quantum dot with the help of ultrafast spectroscopy. Pump-probe and time-resolved measurements revealed the drop of trapping at CdSe surface due to the presence of the ZnS shell, which makes more efficient photoluminescence. We have carried out femtosecond transient absorption studies of the CdSe/ZnS core-shell quantum dot by irradiation with 400 nm laser light, monitoring the transients in the visible region. The optical nonlinearity of the core-shell quantum dot studied by using the Z-scan technique with 120 fs pulses at the wavelengths of 800 nm. The value of two photon absorption coefficients (β) of core-shell QDs extracted as80cm/GW, and it shows excellent benchmark for the optical limiting onset of 2.5GW/cm2 with the low limiting differential transmittance of 0.10, that is an order of magnitude better than graphene based materials.

High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling

Science.gov (United States)

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Joo-Suc; Kim, Se-Eun; Kim, Young-Joo

2017-02-01

An optically efficient structure was proposed and fabricated to realize high brightness organic light emitting diode (OLED) displays based on a white OLED prepared with the air-gapped bridges on the quantum dot (QD) patterns. Compared with a conventional white OLED display, in our experiments, the optical intensity of the proposed OLED display shows the enhancement of 58.2% in the red color and 16.8% in the green color after applying the air-gapped bridge structure on QD patterns of 20 wt% concentration. This enhancement comes from the two facts that the QD patterns downconvert unnecessary blue or blue/green light to the required green or red light and the air-gapped bridges increase the color conversion efficiency of QDs by optical recycling using total internal reflection (TIR) at the interface. In addition, the color gamut of the proposed OLED display increases from 65.5 to 75.9% (NTSC x, y ratio) due to the narrow emission spectra of QDs.

Electrochemical tuning of optical properties of graphitic quantum dots

International Nuclear Information System (INIS)

Ge, Juan; Li, Yan; Zhang, Bo-Ping; Ma, Ning; Wang, Jun; Pu, Chang; Xiang, Ying-Chang

2015-01-01

Graphitic quantum dots (GQDs), as a new class of quantum dots, possess unique properties. Among the various reported approaches for their fabrication, electrochemical method possesses numerous advantages compared with others. In particular, the formation process of the GQDs could be precisely controlled by this method through adjusting the electrochemical parameters and environment. In this study, GQDs with multi-color fluorescence (FL) were obtained by this method through tuning only the applied potential window of cycling voltammetry. The luminescence mechanism of those GQDs was discussed and explained by the ultraviolet (UV)–visible, photoluminescence (PL), and photoluminescence excitation (PLE) spectra. The influence of the applied potential window on the PL properties of GQDs and the relationship between the degree of surface oxidation and PL properties were also investigated. - Highlights: • We produced the graphite quantum dots (GQDs) by an electrochemical method. • We changed the applied potentials of cycling voltammetry (CV). • Varying of applied potentials changed surface oxygen-containing groups of GQDs. • Higher surface oxidation degree resulted in the red-shift of PL spectra

Laterally coupled circular quantum dots under applied electric field

Science.gov (United States)

Duque, C. M.; Correa, J. D.; Morales, A. L.; Mora-Ramos, M. E.; Duque, C. A.

2016-03-01

The optical response of a system of two laterally coupled quantum dots with circular cross-sectional shape is investigated within the effective mass approximation, taking into account the effects of the change in the geometrical configuration, the application of an external static electric field, and the presence of a donor impurity center. The first-order dielectric susceptibility is calculated in order to derive the corresponding light absorption and relative refractive index coefficients. The possibility of tuning these optical properties by means of changes in the quantum dot symmetry and the electric field intensity is particularly discussed.

Gain dynamics and saturation in semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

2004-01-01

Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

Using quantum dots to tag subsurface damage in lapped and polished glass samples

International Nuclear Information System (INIS)

Williams, Wesley B.; Mullany, Brigid A.; Parker, Wesley C.; Moyer, Patrick J.; Randles, Mark H.

2009-01-01

Grinding, lapping, and polishing are finishing processes used to achieve critical surface parameters in a variety of precision optical and electronic components. As these processes remove material from the surface through mechanical and chemical interactions, they may induce a damaged layer of cracks, voids, and stressed material below the surface. This subsurface damage (SSD) can degrade the performance of a final product by creating optical aberrations due to diffraction, premature failure in oscillating components, and a reduction in the laser induced damage threshold of high energy optics. As these defects lie beneath the surface, they are difficult to detect, and while many methods are available to detect SSD, they can have notable limitations regarding sample size and type, preparation time, or can be destructive in nature. The authors tested a nondestructive method for assessing SSD that consisted of tagging the abrasive slurries used in lapping and polishing with quantum dots (nano-sized fluorescent particles). Subsequent detection of fluorescence on the processed surface is hypothesized to indicate SSD. Quantum dots that were introduced to glass surfaces during the lapping process were retained through subsequent polishing and cleaning processes. The quantum dots were successfully imaged by both wide field and confocal fluorescence microscopy techniques. The detected fluorescence highlighted features that were not observable with optical or interferometric microscopy. Atomic force microscopy and additional confocal microscope analysis indicate that the dots are firmly embedded in the surface but do not appear to travel deep into fractures beneath the surface. Etching of the samples exhibiting fluorescence confirmed that SSD existed. SSD-free samples exposed to quantum dots did not retain the dots in their surfaces, even when polished in the presence of quantum dots.

Structural and optical properties of alloyed quaternary CdSeTeS core and CdSeTeS/ZnS core–shell quantum dots

Energy Technology Data Exchange (ETDEWEB)

Adegoke, Oluwasesan, E-mail: adegoke.sesan@mailbox.co.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Forbes, Patricia B.C., E-mail: patricia.forbes@up.ac.za [Department of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

2015-10-05

Highlights: • Alloyed quaternary CdSeTeS core quantum dots (QDs) were synthesized. • Passivation was carried out using a ZnS shell. • Quaternary CdSeTeS core exhibited unique optical properties over CdSeTe/ZnS. • CdSeTeS can be employed as a useful alternative to core/shell QDs. - Abstract: Synthesis of fluorescent alloyed quantum dots (QDs) with unique optical properties suitable for a wide array of chemical, physical and biological applications is of research interest. In this work, highly luminescent and photostable alloyed quaternary CdSeTeS core QDs of two different sizes were fabricated via the organometallic hot-injection synthetic route. Characterization of the nanocrystals were performed using TEM, XRD, UV/vis and fluorescence spectrophotometric techniques. We have demonstrated in this work that the well fabricated alloyed quaternary CdSeTeS core QDs possess unique optical properties that are advantageous over conventional core/shell systems. Formation of the CdSeTeS/ZnS core/shell with the desired optical properties comes with a number of challenges, hence the advantages of the quaternary alloyed core over the core/shell QDs are (i) avoidance of the challenging process of determining the proper shell thickness which can provide the desired optical properties in the core/shell system and (ii) avoidance of the lattice-induced mismatch between the core and the shell material which can either lead to incomplete exciton confinement or dislocation at the core/shell interface.

Optical transition pathways in type-II Ga(As)Sb quantum dots

International Nuclear Information System (INIS)

Gradkowski, Kamil; Ochalski, Tomasz J.; Williams, David P.; Tatebayashi, Jun; Khoshakhlagh, Arezou; Balakrishnan, Ganesh; O'Reilly, Eoin P.; Huyet, Guillaume; Dawson, Larry R.; Huffaker, Diana L.

2009-01-01

We present results of room temperature photoreflectance (PR) and photoluminescence (PL) measurements of molecular-beam epitaxy (MBE)-grown GaAsSb/GaAs quantum dot structures: one with an In 0.14 Ga 0.86 As capping quantum well and one without it. PL was used to determine the structures' ground-state transition energies. This result was employed in an 8-band k.p Hamiltonian to achieve a band structure of the structures, which have different electron confinement. The dot emission energies suggest a large amount of As incorporation into the dots, which is due to enhanced adatom mixing at a higher than normal growth temperature of 510 deg. C. Our calculations indicate a dot composition of 25-50% Sb gives the best fit to experiment. This uncertainty in composition arises due to the fact that different bowing parameters of the ternary alloy could be applied in the calculations. The theoretical analysis accounts well for the main feature in the PR spectra of both samples

Structural Control of InP/ZnS Core/Shell Quantum Dots Enables High-quality White LEDs.

Science.gov (United States)

Ganesh Kumar, Baskaran; Sadeghi, Sadra; Melikov, Rustamzhon; Mohammadi Aria, Mohammed; Bahmani Jalali, Houman; Ow-Yang, Cleva; Nizamoglu, Sedat

2018-05-30

Herein, we demonstrate that the structural and optical control of InP-based quantum dots can lead to high-performance LEDs. Zinc sulphide (ZnS) shells passivate the InP quantum dot core and increase the quantum yield in green-emitting quantum dots by 13-fold and red-emitting quantum dots by 8-fold. The optimised quantum dots are integrated in the liquid-state to eliminate aggregation induced emission quenching and we fabricated white LEDs with warm, neutral, and cool white appearance by the down-conversion mechanism. The quantum dot-functionalized white LEDs achieve luminous efficiency up to 14.7 lm/W and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell quantum dots enable 23-fold enhancement in luminous efficiency of white LEDs compared to ones containing only QDs of InP core. © 2018 IOP Publishing Ltd.

Investigation of some critical parameters of buffer conditions for the development of quantum dots-based optical sensors

International Nuclear Information System (INIS)

Yuan Jipei; Guo Weiwei; Wang Erkang

2008-01-01

The unique surface-sensitive properties make quantum dots (QDs) great potential in the development of sensors for various analytes. However, quantum dots are not only sensitive to a certain analyte, but also to the surrounding conditions. The controlled response to analyte may be the first step in the designing of functional quantum dots sensors. In this study, taking the quenching effect of benzoquinone (BQ) on CdTe QDs as model, several critical parameters of buffer solution conditions with potential effect on the sensors were investigated. The pH value and the concentration of sodium citrate in the buffer solution critically influenced the quenching effects of BQ. Dozens folds elevation of the quenching extents were observed with the increase of concentrations of H + and sodium citrate, and the quenching mechanisms were also fundamentally different with the changes of the surrounding buffer solutions. The quenching models were proposed and analyzed at different buffer conditions. Taking pH values for example, QDs quenching obeyed the sphere of effective quenching model with the sphere radii of 8.29 nm at pH 8.0, the linear Stern-Volmer equation with Stern-Volmer constant of 2.0 x 10 3 mol -1 L at pH 7.0, and the two binding site static quenching model at basic conditions. The elucidation of parameters for assay performance was important in the development of QDs-based optical sensors

Influence of quasibound states on the carrier capture in quantum dots

DEFF Research Database (Denmark)

Magnúsdóttir, Ingibjörg; Uskov, A.V.; Ferreira, R.

2002-01-01

The interaction of carriers in quantum-dot quasibound states with longitudinal optical phonons is investigated. For a level separation between the quasibound state and a discrete quantum-dot state in the vicinity of the phonon energy, a strong electron-phonon coupling occurs. A mixed electron...

Quantum optics with semiconductor nanostructures

CERN Document Server

Jahnke, Frank

2012-01-01

A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

International Nuclear Information System (INIS)

Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

2014-01-01

An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

Repositioning Your EMBA Program and Reinventing Your Brand: A Case Study Analysis

Science.gov (United States)

Petit, Francis

2009-01-01

The purpose of this research is to illustrate how Fordham University, the Jesuit University of New York, repositioned its Executive MBA Program and reinvented its brand, over a ten year period. More specifically, this research will analyze the current state of the Executive MBA market and will discuss the best practices and frameworks implemented…

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki; Harada, Yukihiro

2014-01-01

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n + -GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarization sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.

Culture, regeneration and community: Reinventing the city

Directory of Open Access Journals (Sweden)

Donald Hyslop

2012-08-01

Full Text Available It is just over 12 years since the doors of Tate Modern in London were opened. In converting Gilbert Giles Scott’s Bankside Power Station into a museum we planned for two million visitors in the first year but received over five million – a number exceeding our wildest expectations. Year after year the high levels of attendance continues and now we are very much part of the cultural landscape, not only in the UK but across the world. This article explores the development, challenges and successes of what has become known as the Tate Modern ‘project’. While the museum and its collection is undoubtedly at the project's heart, it also involves a comprehensive strategy to utilise creative organisations and creative thinking in the development, regeneration and reinvention of a key area of a major world city. Central to this model of engaged working are a series of basic challenges: —how can the various needs of local communities, workers and tourists be balanced when developing an area? —how can cultural organisations and other businesses work together, and can culture be good for business? —what is the best way to engage and encourage political leadership and advocacy? —what is the best way to develop an organisation which not only works within local, national and international contexts but makes connections between them? —what are the opportunities to bring artists, creative forces and ideas into urban development and the places and spaces in which we live our everyday lives? It is hoped that this article will help us think about, imagine and practically develop the neighbourhoods and communities that we aspire to create. Keywords: Creative thinking, culture, urban regeneration and reinvention

Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells

KAUST Repository

Choi, Joshua J.; Wenger, Whitney N.; Hoffman, Rachel S.; Lim, Yee-Fun; Luria, Justin; Jasieniak, Jacek; Marohn, John A.; Hanrath, Tobias

2011-01-01

Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells

KAUST Repository

Choi, Joshua J.

2011-06-03

Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polarized electrons, trions, and nuclei in charged quantum dots

Science.gov (United States)

Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

2003-07-01

We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

Tunable single quantum dot nanocavities for cavity QED experiments

International Nuclear Information System (INIS)

Kaniber, M; Laucht, A; Neumann, A; Bichler, M; Amann, M-C; Finley, J J

2008-01-01

We present cavity quantum electrodynamics experiments performed on single quantum dots embedded in two-dimensional photonic crystal nanocavities. We begin by describing the structural and optical properties of the quantum dot sample and the photonic crystal nanocavities and compare the experimental results with three-dimensional calculations of the photonic properties. The influence of the tailored photonic environment on the quantum dot spontaneous emission dynamics is studied using spectrally and spatially dependent time-resolved spectroscopy. In ensemble and single dot measurements we show that the photonic crystals strongly enhance the photon extraction efficiency and, therefore, are a promising concept for realizing efficient single-photon sources. Furthermore, we demonstrate single-photon emission from an individual quantum dot that is spectrally detuned from the cavity mode. The need for controlling the spectral dot-cavity detuning is discussed on the basis of shifting either the quantum dot emission via temperature tuning or the cavity mode emission via a thin film deposition technique. Finally, we discuss the recently discovered non-resonant coupling mechanism between quantum dot emission and cavity mode for large detunings which drastically lowers the purity of single-photon emission from dots that are spectrally coupled to nanocavity modes.

Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

NARCIS (Netherlands)

Robert, C.; Cornet, C.; da Silva, K.P.; Turban, G.; Mauger, S.J.C.; Thanh, T.N.; Even, J.; Jancu, J.M.; Perrin, M.; Folliot, H.; Rohel, T.; Tricot, S.; Balocchi, A.; Barate, P.; Marie, X.; Koenraad, P.M.; Alonso, M.I.; Goni, N.; Bertru, N.; Durand, O.; Corre, Le A.

2013-01-01

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a

Measurement of Electronic States of PbS Nanocrystal Quantum Dots Using Scanning Tunneling Spectroscopy: The Role of Parity Selection Rules in Optical Absorption

Science.gov (United States)

Diaconescu, Bogdan; Padilha, Lazaro A.; Nagpal, Prashant; Swartzentruber, Brian S.; Klimov, Victor I.

2013-03-01

We study the structure of electronic states in individual PbS nanocrystal quantum dots by scanning tunneling spectroscopy (STS) using one-to-two monolayer nanocrystal films treated with 1, 2-ethanedithiols (EDT). Up to six individual valence and conduction band states are resolved for a range of quantum dot sizes. The measured states’ energies are in good agreement with calculations using the k·p four-band envelope function formalism. A comparison of STS and optical absorption spectra indicates that some of the absorption features can only be explained by asymmetric transitions involving the states of different symmetries (e.g., S and P or P and D), which points towards the relaxation of the parity selection rules in these nanostructures. STS measurements also reveal a midgap feature, which is likely similar to one observed in previous charge transport studies of EDT-treated quantum dot films.

Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots

NARCIS (Netherlands)

Ulloa, J.M.; Llorens, J.M.; Moral, del M.; Bozkurt, M.; Koenraad, P.M.; Hierro, A.

2012-01-01

The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs1-xSbx layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined through cross-sectional scanning tunnelling microscopy

Donor-impurity-related optical response and electron Raman scattering in GaAs cone-like quantum dots

Science.gov (United States)

Gil-Corrales, A.; Morales, A. L.; Restrepo, R. L.; Mora-Ramos, M. E.; Duque, C. A.

2017-02-01

The donor-impurity-related optical absorption, relative refractive index changes, and Raman scattering in GaAs cone-like quantum dots are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The study involves 1 s -like, 2px-like, and 2pz-like states. The conical structure is chosen in such a way that the cone height is large enough in comparison with the base radius thus allowing the use a quasi-analytic solution of the uncorrelated Schrödinger-like electron states.

A theoretical study of exciton energy levels in laterally coupled quantum dots

International Nuclear Information System (INIS)

Barticevic, Z; Pacheco, M; Duque, C A; Oliveira, L E

2009-01-01

A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.

Spectral Barcoding of Quantum Dots: Deciphering Structural Motifs from the Excitonic Spectra

International Nuclear Information System (INIS)

Mlinar, V.; Zunger, A.

2009-01-01

Self-assembled semiconductor quantum dots (QDs) show in high-resolution single-dot spectra a multitude of sharp lines, resembling a barcode, due to various neutral and charged exciton complexes. Here we propose the 'spectral barcoding' method that deciphers structural motifs of dots by using such barcode as input to an artificial-intelligence learning system. Thus, we invert the common practice of deducing spectra from structure by deducing structure from spectra. This approach (i) lays the foundation for building a much needed structure-spectra understanding for large nanostructures and (ii) can guide future design of desired optical features of QDs by controlling during growth only those structural motifs that decide given optical features.

Site-controlled quantum dots coupled to photonic crystal waveguides

DEFF Research Database (Denmark)

Rigal, B.; de Lasson, Jakob Rosenkrantz; Jarlov, C.

2016-01-01

We demonstrate selective optical coupling of multiple, site controlled semiconductor quantum dots (QDs) to photonic crystal waveguide structures. The impact of the exact position and emission spectrum of the QDs on the coupling efficiency is elucidated. The influence of optical disorder and end-r...

Enhanced Gain in Slow-Light Photonic Crystal Waveguides with Embedded Quantum Dots

DEFF Research Database (Denmark)

Ek, Sara; Hansen, Per Lunnemann; Semenova, Elizaveta

2011-01-01

We experimentally demonstrate enhanced gain in the slow-light regime of quantum dot photonic crystal waveguide slabs. These are promising results for future compact devices for terabit/s communication, such as compact optical amplifiers and mode-locked lasers.......We experimentally demonstrate enhanced gain in the slow-light regime of quantum dot photonic crystal waveguide slabs. These are promising results for future compact devices for terabit/s communication, such as compact optical amplifiers and mode-locked lasers....

Analysis of near-field components of a plasmonic optical antenna and their contribution to quantum dot infrared photodetector enhancement.

Science.gov (United States)

Gu, Guiru; Vaillancourt, Jarrod; Lu, Xuejun

2014-10-20

In this paper, we analyze near-field vector components of a metallic circular disk array (MCDA) plasmonic optical antenna and their contribution to quantum dot infrared photodetector (QDIP) enhancement. The near-field vector components of the MCDA optical antenna and their distribution in the QD active region are simulated. The near-field overlap integral with the QD active region is calculated at different wavelengths and compared with the QDIP enhancement spectrum. The x-component (E(x)) of the near-field vector shows a larger intensity overlap integral and stronger correlation with the QDIP enhancement than E(z) and thus is determined to be the major near-field component to the QDIP enhancement.

Study of CdTe quantum dots grown using a two-step annealing method

Science.gov (United States)

Sharma, Kriti; Pandey, Praveen K.; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

2006-02-01

High size dispersion, large average radius of quantum dot and low-volume ratio has been a major hurdle in the development of quantum dot based devices. In the present paper, we have grown CdTe quantum dots in a borosilicate glass matrix using a two-step annealing method. Results of optical characterization and the theoretical model of absorption spectra have shown that quantum dots grown using two-step annealing have lower average radius, lesser size dispersion, higher volume ratio and higher decrease in bulk free energy as compared to quantum dots grown conventionally.

Influence of nitrogen on the growth and the properties of InAs quantum dots

International Nuclear Information System (INIS)

Schumann, O.

2004-01-01

This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

Circular polarization memory in single Quantum Dots

International Nuclear Information System (INIS)

Khatsevich, S.; Poem, E.; Benny, Y.; Marderfeld, I.; Gershoni, D.; Badolato, A.; Petroff, P. M.

2010-01-01

Under quasi-resonant circularly polarized optical excitation, charged quantum dots may emit polarized light. We measured various transitions with either positive, negative or no circular-polarization memory. We explain these observations and quantitatively calculate the polarization spectrum. Our model use the full configuration-interaction method, including the electron-hole exchange interaction, for calculating the quantum dot's confined many-carrier states, along with one assumption regarding the spin relaxation of photoexcited carriers: Electrons maintain their initial spin polarization, while holes do not.

12th Reinventing Space Conference

CERN Document Server

2017-01-01

The 2014 Reinventing Space conference presented a number of questions in the context of a constantly innovating space industry, from addressing the future of global cooperation, investigating the impact of cuts in US government spending on the private space sector, and probing the overall future of the commercial launch sector. Space tourism and new technology promise the revival of interest in space development (the Apollo Era was the first period of intense space activity and growth). The need to create dramatically lower cost, responsive and reliable launch systems and spacecraft has never been more vital. Advances in technology are allowing smaller and cheaper satellites to be orbited - from cubesats to nanosatellites to femtosatellites. Thanks to more efficient new launch possibilities, low cost access to space is becoming ever more achievable. Commercial companies and countries are targeting the industry with new funding. Organised by the British Interplanetary Society, the presentations at this confere...

Imaging of macrophage dynamics with optical coherence tomography in anterior ischemic optic neuropathy.

Science.gov (United States)

Kokona, Despina; Häner, Nathanael U; Ebneter, Andreas; Zinkernagel, Martin S

2017-01-01

Anterior ischemic optic neuropathy (AION) is a relatively common cause of visual loss and results from hypoperfusion of the small arteries of the anterior portion of the optic nerve. AION is the leading cause of sudden optic nerve related vision loss with approximately 10 cases per 100'000 in the population over 50 years. To date there is no established treatment for AION and therefore a better understanding of the events occurring at the level of the optic nerve head (ONH) would be important to design future therapeutic strategies. The optical properties of the eye allow imaging of the optic nerve in vivo, which is a part of the CNS, during ischemia. Experimentally laser induced optic neuropathy (eLiON) displays similar anatomical features as anterior ischemic optic neuropathy in humans. After laser induced optic neuropathy we show that hyperreflective dots in optical coherence tomography correspond to mononuclear cells in histology. Using fluorescence-activated flow cytometry (FACS) we found these cells to peak one week after eLiON. These observations were translated to OCT findings in patients with AION, where similar dynamics of hyperreflective dots at the ONH were identified. Our data suggests that activated macrophages can be identified as hyperreflective dots in OCT. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

Probing long-lived dark excitons in self-assembled quantum dots

DEFF Research Database (Denmark)

Johansen, Jeppe; Julsgaard, Brian; Stobbe, Søren

2010-01-01

Long-lived dark exciton states are formed in self-assembled quantum dots due to the combination of the angular momentum of electrons and holes. The lifetime of dark excitons are determined by spin-flip processes that transfer dark excitons into radiative bright excitons. We employ time......-resolved spontaneous emission measurements in a modified local density of optical states to unambiguously record the spin-flip rate. Pronounced variations in the spin-flip rate with the quantum dot emission energy are observed demonstrating that the exciton storage time can be extended by controlling the quantum dot......, which illustrates the important role of interfaces for quantum dot based nanophotonic structures....

Modeling of phonon- and Coulomb-mediated capture processes in quantum dots

DEFF Research Database (Denmark)

Magnúsdóttir, Ingibjörg

2003-01-01

This thesis describes modeling of carrier relaxation processes in self-assembled quantum-dot-structures, with particular emphasis on carrier capture processes in quantum dots. Relaxation by emission of lontitudinal optical (LO) phonons is very efficient in bulk semiconductors and nanostructures...... of higher dimensionality. Here, we investigate carrier capture processes into quantum dots, mediated by emission of one and two LO phonons. In these investigations is is assumed that the dot is empty initially. In the Case of single-phonon capture we also investigate the influence of the presence...... of a charge in the quantum-dot state to which the capture takes place. In general, capture rates are of the same order as capture rates into an empty dot state, but in some cases the dot-size interval for which the capture process is energetically allowed, is considerably reduced.The above calculations...

A Spiritual Contact Zone: Re-Inventing Ritual Space in The Netherlands' Afrika Museum

NARCIS (Netherlands)

Kleuskens, E.; School, F.; Thijs, S.; Westendorp, M.F.; Venbrux, H.J.M.

2010-01-01

The research project Holy Ground, led by Paul Post and Arie Molendijk, has drawn attention to the process of 're-inventing ritual space in modern Western culture' by examining various places, such as 'rooms of silence and memorial shrines for victims of disease and violence'. Here we want to address

Effects of hydrostatic pressure and temperature on interband optical transitions in InAs/GaAs vertically coupled double quantum dots

International Nuclear Information System (INIS)

Baghramyan, H M; Barseghyan, M G; Kirakosyan, A A

2012-01-01

We consider the effect of hydrostatic pressure, temperature and the variations of structure's sizes on interband transition energy and absorption coefficient in InAs/GaAs vertically coupled double quantum dots. The threshold energy of interband optical transitions is examined as a function of hydrostatic pressure and temperature for the different geometries of the structure. We also investigated the dependencies of the interband light absorption coefficient on the incident photon energy.

Theory of Spin States of Quantum Dot Molecules

Science.gov (United States)

Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

2007-04-01

The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots.

Science.gov (United States)

Geiregat, Pieter; Houtepen, Arjan J; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; Van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots

Science.gov (United States)

Geiregat, Pieter; Houtepen, Arjan J.; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

From structure to spectra. Tight-binding theory of InGaAs quantum dots

International Nuclear Information System (INIS)

Goldmann, Elias

2014-01-01

Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In x Ga 1-x As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp 3 s * tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In x Ga 1-x As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being counterintuitively. Our result

From structure to spectra. Tight-binding theory of InGaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Goldmann, Elias

2014-07-23

Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In{sub x}Ga{sub 1-x}As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp{sup 3}s{sup *} tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In{sub x}Ga{sub 1-x}As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being

76 FR 56406 - Science and Technology Reinvention Laboratory Demonstration Project; Department of the Army; Army...

Science.gov (United States)

2011-09-13

... DEPARTMENT OF DEFENSE Office of the Secretary Science and Technology Reinvention Laboratory Demonstration Project; Department of the Army; Army Research, Development and Engineering Command; Tank... personnel management demonstration project for eligible TARDEC employees. Within that notice the table...

Optical and structural characterization of self-organized stacked GaN/AlN quantum dots

International Nuclear Information System (INIS)

Salviati, G; Rossi, F; Armani, N; Grillo, V; Martinez, O; Vinattieri, A; Damilano, B; Matsuse, A; Grandjean, N

2004-01-01

Self-organized GaN/AlN stacked quantum dots (QDs) have been studied by means of cathodoluminescence (CL), near field scanning optical microscopy (NSOM), photoluminescence, μ-Raman, and transmission electron microscopy. Assignment of the optical emissions was made on the basis of the structural parameters, power-dependent optical studies and depth-resolved CL. Power-dependent studies allowed us to distinguish between quantum confined and buffer emissions. On increasing the power injection conditions, a QD-size-dependent blue shift due to the screening of the internal electric fields was found together with a trend to saturation observed in the high injection limit. The possible evidence of excited states has also been shown by power-dependent photoluminescence and CL. Different blue shifts in specimens with different numbers of stacked layers suggested possible different residual strain values as confirmed by μ-Raman studies. Depth-resolved CL investigations performed at constant power injection per unit volume allowed us to distinguish between QD layers with different nominal GaN coverages and a linear dependence of peak energy versus GaN monolayer number has also been found. Adding 1 ML of GaN resulted in an average shift of about 150 meV. The existence of QDs with different size distributions along the growth axis was also found. The observations were confirmed by NSOM spectroscopy

Hybrid quantum-classical modeling of quantum dot devices

Science.gov (United States)

Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

2017-11-01

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

Observation of single quantum dots in GaAs/AlAs micropillar cavities

Energy Technology Data Exchange (ETDEWEB)

Burger, Philipp; Karl, Matthias; Hu, Dongzhi; Schaadt, Daniel M.; Kalt, Heinz; Hetterich, Michael [Institut fuer Angewandte Physik, Universitaet Karlsruhe (Germany); DFG Center for Functional Nanostructures (CFN), Karlsruhe (Germany)

2009-07-01

In our contribution we present the fabrication steps of micropillar cavities and their optical properties. The layer structure consisting of a GaAs-based lambda-cavity sandwiched between two GaAs/AlAs distributed Bragg reflectors is grown by molecular-beam epitaxy. In(Ga)As quantum dots, emitting at around 950 nm, are embedded as optically active medium in the middle of the cavity. The pillars are milled out of this structure with a focused ion-beam. A confocal micro-photoluminescence set-up allows to measure optical cavity modes as well as single quantum dots in the pillars when using low excitation intensity. This enables us to observe a (thermal) shift of the single quantum dot peaks relative to the cavity mode. In addition, we increased the numerical aperture of the set-up (originally 0.4) with a solid immersion lens up to 0.8. Thus we are able to detect the fundamental mode of pillars with very small diameters. Furthermore, the collection efficiency increases substantially.

Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study.

Science.gov (United States)

Bardella, Paolo; Columbo, Lorenzo Luigi; Gioannini, Mariangela

2017-10-16

Optical Frequency Comb (OFC) generated by semiconductor lasers are currently widely used in the extremely timely field of high capacity optical interconnects and high precision spectroscopy. In the last decade, several experimental evidences of spontaneous OFC generation have been reported in single section Quantum Dot (QD) lasers. Here we provide a physical understanding of these self-organization phenomena by simulating the multi-mode dynamics of a single section Fabry-Perot (FP) QD laser using a Time-Domain Traveling-Wave (TDTW) model that properly accounts for coherent radiation-matter interaction in the semiconductor active medium and includes the carrier grating generated by the optical standing wave pattern in the laser cavity. We show that the latter is the fundamental physical effect at the origin of the multi-mode spectrum appearing just above threshold. A self-mode-locking regime associated with the emission of OFC is achieved for higher bias currents and ascribed to nonlinear phase sensitive effects as Four Wave Mixing (FWM). Our results explain in detail the behaviour observed experimentally by different research groups and in different QD and Quantum Dash (QDash) devices.

Many-body effects in the gain spectra of highly excited quantum-dot lasers

International Nuclear Information System (INIS)

Schneider, H. C.; Chow, W. W.; Koch, S. W.

2001-01-01

Optical gain spectra are computed for quantum dots under high excitation conditions, where there is a non-negligible two-dimensional carrier density surrounding the dots. Using a screened Hartree-Fock theory to describe the influence of the Coulomb interaction, we find different self-energy shifts for the dot and quantum-well transitions. Furthermore, in contrast to the result for quantum-well and bulk systems, the peak gain at the quantum-dot transition computed including Coulomb effects is reduced from its free carrier value

Quantum optics with quantum dots in photonic wires

DEFF Research Database (Denmark)

Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean

2016-01-01

We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...

Keynote address: Reinventing fire: Physics + markets = energy solutions

International Nuclear Information System (INIS)

Lovins, Amory B.

2015-01-01

Rocky Mountain Institute's multi-year, 61-author, peer-reviewed Reinventing Fire synthesis showed how the U.S. can realistically run a 2.6× bigger U.S. economy in 2050 with no oil, coal, or nuclear energy, one-third less natural gas, tripled efficiency, and 74% renewable supplies (80% for electricity). This transition, at historically reasonable rates, could be led by business for profit, applying normal rates of return, with some innovative subnational and administrative policies but no Acts of Congress. Excluding carbon emissions and all other externalities, the net present value would be $5 trillion more favorable than business-as-usual, averaging a 14% Internal Rate of Return

Keynote address: Reinventing fire: Physics + markets = energy solutions

Energy Technology Data Exchange (ETDEWEB)

Lovins, Amory B., E-mail: ablovins@rmi.org [Cofounder and Chief Scientist, Rocky Mountain Institute, 2317 Snowmass Creek Road, Snowmass CO 81654 (United States)

2015-03-30

Rocky Mountain Institute's multi-year, 61-author, peer-reviewed Reinventing Fire synthesis showed how the U.S. can realistically run a 2.6× bigger U.S. economy in 2050 with no oil, coal, or nuclear energy, one-third less natural gas, tripled efficiency, and 74% renewable supplies (80% for electricity). This transition, at historically reasonable rates, could be led by business for profit, applying normal rates of return, with some innovative subnational and administrative policies but no Acts of Congress. Excluding carbon emissions and all other externalities, the net present value would be $5 trillion more favorable than business-as-usual, averaging a 14% Internal Rate of Return.

Linear and nonlinear optical properties of multilayered spherical quantum dots: Effects of geometrical size, hydrogenic impurity, hydrostatic pressure and temperature

International Nuclear Information System (INIS)

Karimi, M.J.; Rezaei, G.; Nazari, M.

2014-01-01

Based on the effective mass and parabolic one band approximations, simultaneous effects of the geometrical size, hydrogenic impurity, hydrostatic pressure, and temperature on the intersubband optical absorption coefficients and refractive index changes in multilayered spherical quantum dots are studied. Energy eigenvalues and eigenvectors are calculated using the fourth-order Runge–Kutta method and optical properties are obtained using the compact density matrix approach. The results indicate that the hydrogenic impurity, hydrostatic pressure, temperature and geometrical parameters such as the well and barrier widths have a great influence on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes. -- Highlights: • Hydrogenic impurity effects on the optical properties of a MSQD are investigated. • Hydrostatic pressure and temperature effects are also studied. • Hydrogenic impurity has a great influence on the linear and nonlinear ACs and RICs. • Hydrostatic pressure and temperature change the linear and nonlinear ACs and RICs

Optical absorption of CdSe quantum dots on electrodes with different morphology

Directory of Open Access Journals (Sweden)

Witoon Yindeesuk

2013-10-01

Full Text Available We have studied the optical absorption of CdSe quantum dots (QDs adsorbed on inverse opal TiO2 (IO-TiO2 and nanoparticulate TiO2 (NP-TiO2 electrodes using photoacoustic (PA measurements. The CdSe QDs were grown directly on IO-TiO2 and NP-TiO2 electrodes by a successive ionic layer adsorption and reaction (SILAR method with different numbers of cycles. The average diameter of the QDs was estimated by applying an effective mass approximation to the PA spectra. The increasing size of the QDs with increasing number of cycles was confirmed by a redshift in the optical absorption spectrum. The average diameter of the CdSe QDs on the IO-TiO2 electrodes was similar to that on the NP-TiO2 ones, indicating that growth is independent of morphology. However, there were more CdSe QDs on the NP-TiO2 electrodes than on the IO-TiO2 ones, indicating that there were different amounts of active sites on each type of electrode. In addition, the Urbach parameter of the exponential optical absorption tail was also estimated from the PA spectrum. The Urbach parameter of CdSe QDs on IO-TiO2 electrodes was higher than that on NP-TiO2 ones, indicating that CdSe QDs on IO-TiO2 electrodes are more disordered states than those on NP-TiO2 electrodes. The Urbach parameter decreases in both cases with the increase of SILAR cycles, and it tended to move toward a constant value.

Four-wave mixing in InAlGaAs quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Birkedal, Dan; Hvam, Jørn Märcher

2001-01-01

broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out...... degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured....

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

Science.gov (United States)

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor I.

2018-01-01

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge--realization of lasing with electrical injection--remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm-2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm-2 we achieve the population inversion of the band-edge states.

Nonlinear optical rectification in vertically coupled InAs/GaAs quantum dots under electromagnetic fields, pressure and temperature effects

Energy Technology Data Exchange (ETDEWEB)

Choubani, M., E-mail: mohsenchoubani3@yahoo.fr; Ben Mahrsia, R.; Bouzaiene, L.; Maaref, H.

2013-12-15

In this paper we explore the effects of the structural dimensions, applied electromagnetic fields, hydrostatic pressure and temperature on the nonlinear optical rectification (NOR) in Vertically Coupled InAs/GaAs Quantum Dots (VCQDs). The analytical expression of the NOR is analyzed by using the density matrix formalism, the effective mass and the Finite Difference Method (FDM). Obtained results show that the NOR obtained with this coupled system is not a monotonic function of the barrier width, electromagnetic fields, pressure and temperature. Also, calculated results reveal that the resonant peaks of the NOR can be blue-shifted or red-shifted energies depending on the energy of the lowest confined states in the VCQDs structure. In addition, this condition can be controlled by changes in the structural dimensions and the external proofs mentioned above. -- Highlights: • In this paper we explore the effects of the barrier width, applied electromagnetic fields, hydrostatic pressure and temperature on the nonlinear optical rectification (NOR) in Vertically Coupled InAs/GaAs Quantum Dots (VCQDs). • The calculated results reveal that the resonant peaks of the NOR can be blue-shifted to large photon energies or red-shifted to lower photon energies. • In this paper, all parameters: electromagnetic fields, pressure and temperature effects are introduced and investigated. • The resonant energy and the magnitude of the NOR are controlled and adjusted.

Optical parameters of ITO/TPD/Alq3/Al luminescent structures, containing arrays of CdSe/ZnS colloidal quantum dots

Science.gov (United States)

Mikhailov, I. I.; Tarasov, S. A.; Lamkin, I. A.; Tadtaev, P. O.; Kozlovich, L. I.; Solomonov, A. V.; Stepanov, E. M.

2016-08-01

The luminescent organic ITO/TPD/Alq3/Al structures and CdSe/ZnS quantum dots (QD) arrays were created. Electrical and optical properties of the samples were examined. The luminescence of the layers and QD arrays was shown in the range of wavelengths from 400 to 680 nm. Luminescent structures with phosphors corresponding to the emission standards with CRI>98 and with color temperature of 5500 K and 6504 K were created.

Different valence Sn doping - A simple way to detect oxygen concentration variation of ZnO quantum dots synthesized under ultrasonic irradiation.

Science.gov (United States)

Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P

2017-09-01

An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.

Probing ultrafast carrier tunneling dynamics in individual quantum dots and molecules

Energy Technology Data Exchange (ETDEWEB)

Mueller, Kai; Bechtold, Alexander; Kaldewey, Timo; Zecherle, Markus; Wildmann, Johannes S.; Bichler, Max; Abstreiter, Gerhard; Finley, Jonathan J. [Walter Schottky Institut and Physik-Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748, Garching (Germany); Ruppert, Claudia; Betz, Markus [Experimentelle Physik 2, TU Dortmund, 44221, Dortmund (Germany); Krenner, Hubert J. [Lehrstuhl fuer Experimentalphysik 1 and Augsburg Centre for Innovative Technologies (ACIT), Universitaet Augsburg, Universitaetsstr 1, 86159, Augsburg (Germany); Villas-Boas, Jose M. [Instituto de Fisica, Universidade Federal de Uberlandia, 38400-902, Uberlandia, MG (Brazil)

2013-02-15

Ultrafast pump-probe spectroscopy is employed to directly monitor the tunneling of charge carriers from single and vertically coupled quantum dots and probe intra-molecular dynamics. Immediately after resonant optical excitation, several peaks are observed in the pump-probe spectrum arising from Coulomb interactions between the photogenerated charge carriers. The influence of few-Fermion interactions in the photoexcited system and the temporal evolution of the optical response is directly probed in the time domain. In addition, the tunneling times for electrons and holes from the QD nanostructure are independently determined. In polarization resolved measurements, near perfect Pauli-spin blockade is observed in the spin-selective absorption spectrum as well as stimulated emission. While electron and hole tunneling from single quantum dots is shown to be well explained by the WKB formalism, for coupled quantum dots pronounced resonances in the electron tunneling rate are observed arising from elastic and inelastic electron tunneling between the different dots. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Energy Technology Data Exchange (ETDEWEB)

Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

2013-08-31

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

Science.gov (United States)

Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

2015-05-07

Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

Biomedical application of carbon quantum dots

International Nuclear Information System (INIS)

Markovic, Z.

2017-01-01

In this presentation we will summarize and discuss the possibilities of application of carbon quantum dots (CQD) as agents for PDT. Considering their biocompatibility, photostability and optical properties, CQD seem to be good candidates as a photosensitizer. This lecture critically compares and discusses current state-of the-art use of CQD in PDT. We will analyze structural, morphological and optical properties of these nanomaterials as well as the mechanisms responsible for their photosensition and ROS production. (authors)

Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors

Directory of Open Access Journals (Sweden)

Fu Y

2008-01-01

Full Text Available Abstract We present a systemic theoretical study of the electronic properties of the quantum dots inserted in quantum dot infrared photodetectors (QDIPs. The strain distribution of three different shaped quantum dots (QDs with a same ratio of the base to the vertical aspect is calculated by using the short-range valence-force-field (VFF approach. The calculated results show that the hydrostatic strain ɛHvaries little with change of the shape, while the biaxial strain ɛBchanges a lot for different shapes of QDs. The recursion method is used to calculate the energy levels of the bound states in QDs. Compared with the strain, the shape plays a key role in the difference of electronic bound energy levels. The numerical results show that the deference of bound energy levels of lenslike InAs QD matches well with the experimental results. Moreover, the pyramid-shaped QD has the greatest difference from the measured experimental data.

The effects of the intense laser field on the nonlinear optical properties of a cylindrical Ga{sub 1−x}Al{sub x}As/GaAs quantum dot under applied electric field

Energy Technology Data Exchange (ETDEWEB)

Kasapoglu, E., E-mail: ekasap@cumhuriyet.edu.tr [Department of Physics, Cumhuriyet University, 58140 Sivas (Turkey); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autóonoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Sökmen, I. [Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir (Turkey)

2015-10-01

In the present work, the effects of the intense laser field on total optical absorption coefficient (the linear and third-order nonlinear) and total refractive index change (the linear and third-order nonlinear) for transitions between different intersubbands in the Ga{sub 1−x}Al{sub x}As/GaAs cylindrical quantum dot under external electric field are investigated. The calculations were performed within the compact density-matrix formalism with the use of the effective mass approximation. The obtained results show that both total absorption coefficient and refractive index change are sensitive to the electric and intense laser fields. By changing the intensities of the electric and laser fields, we can obtain the blue or red shift, without the need for the growth of many different samples. - Highlights: • The effects of the non-resonant intense laser field and electric field on the nonlinear optical properties of cylindrical quantum dot are investigated. • The both total absorption coefficient and refractive index change are sensitive to dot dimensions and the effects of external fields. • By changing the external fields together with dot dimensions a blue or red shift can be obtained.

Distributed quantum information processing via quantum dot spins

International Nuclear Information System (INIS)

Jun, Liu; Qiong, Wang; Le-Man, Kuang; Hao-Sheng, Zeng

2010-01-01

We propose a scheme to engineer a non-local two-qubit phase gate between two remote quantum-dot spins. Along with one-qubit local operations, one can in principal perform various types of distributed quantum information processing. The scheme employs a photon with linearly polarisation interacting one after the other with two remote quantum-dot spins in cavities. Due to the optical spin selection rule, the photon obtains a Faraday rotation after the interaction process. By measuring the polarisation of the final output photon, a non-local two-qubit phase gate between the two remote quantum-dot spins is constituted. Our scheme may has very important applications in the distributed quantum information processing

Binding Quantum Dots to Silk Biomaterials for Optical Sensing

Directory of Open Access Journals (Sweden)

Disi Lu

2015-01-01

Full Text Available Quantum dots (QDs, have great potential for fabricating optical sensing devices and imaging biomaterial degradation in vivo. In the present study, 2-mercaptoethylamine- (MEA- and mercaptopropionic acid- (MPA- capped CdTe-QDs were physically incorporated in silk films that contained a high content (>30% of crystalline beta-sheet structure. The beta-sheets were induced by the addition of glycerol, water annealing, glycerol/annealing, or treatment with methanol. Incorporation of QDs did not influence the formation of beta-sheets. When the films were extracted with water, most QDs remained associated with the silk, based on the retention of photoluminescence in the silk films and negligible photoluminescence in the extracts. Compared to the solution state, photoluminescence intensity significantly decreased for MEA-QDs but not for MPA-QDs in the silk films, while the emission maximum blue shifted (≈4 nm slightly for both. Further film digestion using protease XIV, alpha-chymotrypsin, and the combination of the two proteases suggested that QDs may be bound to the silk beta-sheet regions but not the amorphous regions. QDs photoluminescence in silk films was quenched when the concentration of hydrogen peroxide (H2O2 was above 0.2-0.3 mM, indicating the QDs-incorporated silk films can be used to report oxidation potential in solution.

Computational analysis of the amplified spontaneous emission in quantum dot doped plastic optical fibers

International Nuclear Information System (INIS)

Peng, Xuefeng; Han, Yinxia; Hu, Guoqiang; Wu, Pinghui

2014-01-01

The properties of amplified spontaneous emission (ASE) in CdSe/ZnS quantum dot (QD) doped step-index polymer optical fibers (POFs) were computationally analyzed in this paper. A theoretical model based on the rate equations between two main energy levels of CdSe/ZnS QD was built in terms of time (t), distance traveled by light (z) and wavelength (λ), which can describe the ASE successfully. Through analyzing the spectral evolution with distance of the pulses propagating along the CdSe/ZnS QD doped POFs, dependences of the ASE threshold and the slope efficiency on the numerical aperture were obtained. Compared to the ASE in common dye-doped POFs, the pump threshold was just about 1/1000, but the slope efficiency was much higher. (paper)

Multiple evanescent white dot syndrome associated with retinal vasculitis

Directory of Open Access Journals (Sweden)

Takahashi A

2015-09-01

Full Text Available Akihiro Takahashi, Wataru Saito, Yuki Hashimoto, Susumu Ishida Department of Ophthalmology, Hokkaido University Graduate School of Medicine, Sapporo, Japan Purpose: A recent study revealed thickening of the inner retinal layers in acute stage of multiple evanescent white dot syndrome (MEWDS; however, the pathogenesis is still unknown. We report two cases with MEWDS whose funduscopy showed obvious retinal vasculitis. Methods: Case reports. Results: Healthy myopic 16- and 27-year-old women were the cases under study. In both cases, funduscopic examination revealed multiple, faint, small, subretinal white dots at the posterior pole to the midperiphery and macular granularity oculus dexter. Retinal vascular sheathing was also observed at midperiphery. Late-phase fluorescein angiography revealed leakages corresponding to the vascular sheathing. Enhanced depth imaging optical coherence tomography revealed the discontinuity of the ellipsoid zone corresponding to the white dots and increased macular choroidal thickness. One month later, these white dots and retinal sheathing spontaneously resolved in both cases. Three months later, impairments of the outer retinal morphology and the visual acuity were restored. Conclusion: These results suggest that retinal vasculitis possibly plays a role in the pathogenesis of thickened inner retinal layers in acute stage of MEWDS. Keywords: enhanced depth imaging optical coherence tomography, choroidal thickness, inner retinal layer, retinal vascular sheathing

Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-12-18

Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

Science.gov (United States)

Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

2017-07-28

Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

Directory of Open Access Journals (Sweden)

Lin Wen

2017-07-01

Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Magneto-exciton transitions in laterally coupled quantum dots

Science.gov (United States)

Barticevic, Zdenka; Pacheco, Monica; Duque, Carlos A.; Oliveira, Luiz E.

2008-03-01

We present a study of the electronic and optical properties of laterally coupled quantum dots. The excitonic spectra of this system under the effects of an external magnetic field applied perpendicular to the plane of the dots is obtained, with the potential of every individual dot taken as the superposition of a quantum well potential along the axial direction with a lateral parabolic confinement potential, and the coupled two- dot system then modeled by a superposition of the potentials of each dot, with their minima at different positions and truncated at the intersection plane. The wave functions and eigenvalues are obtained in the effective-mass approximation by using an extended variational approach in which the magneto- exciton states are simultaneously obtained [1]. The allowed magneto-exciton transitions are investigated by using circularly polarized radiation in the plane perpendicular to the magnetic field. We present results on the excitonic absorption coefficient as a function of the photon energy for different geometric quantum-dot confinement and magnetic-field values. Reference: [1] Z. Barticevic, M. Pacheco, C. A. Duque and L. E. Oliveira, Phys. Rev. B 68, 073312 (2003).

Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

International Nuclear Information System (INIS)

Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

2008-01-01

The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

NARCIS (Netherlands)

Ulloa Herrero, J.M.; Gargallo-Caballero, R.; Bozkurt, M.; Moral, del M.; Guzman, A.; Koenraad, P.M.; Hierro, A.

2010-01-01

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots (QDs) are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up

Optical orientation in self assembled quantum dots

International Nuclear Information System (INIS)

Stevens, Gregory C.

2002-01-01

We examined Zeeman splitting in a series of ln x Ga (1-x) As/GaAs self assembled quantum dots (SAQD's) with different pump polarisations. All these measurements were made in very low external magnetic fields where direct determination of the Zeeman splitting energy is impossible due to its small value in comparison to the photoluminescence linewidths. The use of a technique developed by M. J. Snelling allowed us to obtain the Zeeman splitting and hence the excitonic g-factors indirectly. We observed a linear low field splitting, becoming increasingly non-linear at higher fields. We attribute this non-linearity to field induced level mixing. It is believed these are the first low field measurements in these structures. A number of apparent nuclear effects in the Zeeman splitting measurements led us onto the examination of nuclear effects in these structures. The transverse and oblique Hanie effects then allowed us to obtain the sign of the electronic g-factors in two of our samples, for one sample, a (311) grown In 0.5 Ga 0.5 As/GaAs SAQD sample, we were able to ascertain the spin relaxation time, the maximum value of the nuclear field, and provide evidence of the existence of nuclear spin freezing in at least one of our samples. We have then used a novel technique investigated by D. J. Guerrier, to examine optically detected nuclear magnetic resonance in our samples. We believe this is the first such study on these structures. We could not ascertain the dipolar indium resonance signal, even though all other isotopes were seen. We have therefore suggested a number of possible mechanisms that may be responsible for the lack of an indium resonance signal. (author)

Deterministic photonic spatial-polarization hyper-controlled-not gate assisted by a quantum dot inside a one-side optical microcavity

International Nuclear Information System (INIS)

Ren, Bao-Cang; Wei, Hai-Rui; Deng, Fu-Guo

2013-01-01

To date, all work concerning the construction of quantum logic gates, an essential part of quantum computing, has focused on operating in one degree of freedom (DOF) for quantum systems. Here, we investigate the possibility of achieving scalable photonic quantum computing based on two DOFs for quantum systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating in both the spatial mode and polarization DOFs for a photon pair simultaneously, using the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a one-side optical microcavity as a result of cavity quantum electrodynamics. With this hyper-CNOT gate and linear optical elements, two-photon four-qubit cluster entangled states can be prepared and analyzed, which give an application to manipulate more information with less resources. We analyze the experimental feasibility of this hyper-CNOT gate and show that it can be implemented with current technology. (letter)

Collective optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and gold nanoparticles embedded in ion-implanted silica

International Nuclear Information System (INIS)

Torres-Torres, C; López-Suárez, A; Oliver, A; Can-Uc, B; Rangel-Rojo, R; Tamayo-Rivera, L

2015-01-01

The study of the third-order optical nonlinear response exhibited by a composite containing gold nanoparticles and silicon quantum dots nucleated by ion implantation in a high-purity silica matrix is presented. The nanocomposites were explored as an integrated configuration containing two different ion-implanted distributions. The time-resolved optical Kerr gate and z-scan techniques were conducted using 80 fs pulses at a 825 nm wavelength; while the nanosecond response was investigated by a vectorial two-wave mixing method at 532 nm with 1 ns pulses. An ultrafast purely electronic nonlinearity was associated to the optical Kerr effect for the femtosecond experiments, while a thermal effect was identified as the main mechanism responsible for the nonlinear optical refraction induced by nanosecond pulses. Comparative experimental tests for examining the contribution of the Au and Si distributions to the total third-order optical response were carried out. We consider that the additional defects generated by consecutive ion irradiations in the preparation of ion-implanted samples do not notably modify the off-resonance electronic optical nonlinearities; but they do result in an important change for near-resonant nanosecond third-order optical phenomena exhibited by the closely spaced nanoparticle distributions. (paper)

Synthesis and characterization of graphene quantum dots/cobalt ferrite nanocomposite

Science.gov (United States)

Ramachandran, Shilpa; Sathishkumar, M.; Kothurkar, Nikhil K.; Senthilkumar, R.

2018-02-01

A facile method has been developed for the synthesis of a graphene quantum dots/cobalt ferrite nanocomposite. Graphene quantum dots (GQDs) were synthesized by a simple bottom-up method using citric acid, followed by the co-precipitation of cobalt ferrite nanoparticles on the graphene quantum dots. The morphology, structural analysis, optical properties, magnetic properties were investigated using transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV-vis absorption spectroscopy, fluorescence spectroscopy, vibrating sample magnetometry (VSM) measurements. The synthesized nanocomposite showed good fluorescence and superparamagnetic properties, which are important for biomedical applications.

Evaluation of the Learning Process of Students Reinventing the General Law of Energy Conservation

Science.gov (United States)

Logman, Paul; Kaper, Wolter; Ellermeijer, Ton

2015-01-01

To investigate the relationship between context and concept we have constructed a conceptual learning path in which students reinvent the concept of energy conservation and embedded this path in two authentic practices. A comparison of the expected learning outcome with actual student output for the most important steps in the learning path gives…

Non-degenerate four-wave mixing in an optically injection-locked InAs/InP quantum dot Fabry–Perot laser

Energy Technology Data Exchange (ETDEWEB)

Huang, H.; Schires, K.; Grillot, F. [Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 46 rue Barrault, 75013 Paris Cedex (France); Poole, P. J. [National Research Council Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)

2015-04-06

Non-degenerate four-wave mixing in an InAs/InP quantum dot Fabry–Perot laser is investigated with an optical injection-locking scheme. Wavelength conversion is obtained for frequency detunings ranging from +2.5 THz to −3.5 THz. The normalized conversion efficiency is maintained above −40 dB between −1.5 and +0.5 THz with an optical signal-to-noise ratio above 20 dB and a maximal third-order nonlinear susceptibility normalized to material gain of 2 × 10{sup −19} m{sup 3}/V{sup 2}. In addition, we show that injection-locking at different positions in the gain spectrum has an impact on the nonlinear conversion process and the symmetry between up- and down- converted signals.

Rapid adiabatic passage in quantum dots: Influence of scattering and dephasing

DEFF Research Database (Denmark)

Schuh, K.; Jahnke, F.; Lorke, Michael

2011-01-01

Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition...... to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots....

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

GaN quantum dots: from basic understanding to unique applications

International Nuclear Information System (INIS)

Pelekanos, N T; Dialynas, G E; Simon, J; Mariette, H; Daudin, B

2005-01-01

The GaN self-assembled quantum dots constitute a very special and intriguing type of semiconductor nanostructure, mainly because they carry in their structure a giant internal electric field that can reach a value up to 7 MV/cm. In this report, we review the most important structural and optical properties of GaN quantum dots, and we discuss their advantages and limitations for blue-UV optoelectronic applications. (invited paper)

Ultrafast signal processing in quantum dot amplifiers through effective spectral holeburning

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper; Uskov, A. V.

2002-01-01

suitable for ultrafast signal processing. The basis of this property is that the process of spectral hole burning (SHB) can become very effective. We consider a traveling wave optical amplifier consisting of the dot states, which interact with the optical signal (no inhomogeneous broadening included...

Influence of surface states of CuInS{sub 2} quantum dots in quantum dots sensitized photo-electrodes

Energy Technology Data Exchange (ETDEWEB)

Peng, Zhuoyin; Liu, Yueli [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Wu, Lei [School of Electronic and Electrical, Wuhan Railway Vocational College of Technology, Wuhan 430205 (China); Zhao, Yinghan; Chen, Keqiang [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

2016-12-01

Graphical abstract: J–V curves of different ligands capped CuInS{sub 2} QDs sensitized TiO{sub 2} photo-electrodes. - Highlights: • DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared. • Surface states of quantum dots greatly influence the electrochemical performance of CuInS{sub 2} quantum dot sensitized photo-electrodes. • S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes. - Abstract: Surface states are significant factor for the enhancement of electrochemical performance in CuInS{sub 2} quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S{sup 2−} ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S{sup 2−}-capped CuInS{sub 2} quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

Lossless synthesis of graphene nanosheets decorated with tiny cadmium sulfide quantum dots with excellent nonlinear optical properties

International Nuclear Information System (INIS)

Feng Miao; Zhan Hongbing; Sun Ruiqing; Chen Yu

2010-01-01

The implantation and growth of metal nanoparticles on graphene nanosheets (GNS) leads directly to severe damage to the regular structure of the graphene sheets, which disrupts the extended π conjugation, resulting in an impaired device performance. In this paper, we describe a facile approach for achieving the lossless formation of graphene composite decorated with tiny cadmium sulfide quantum dots (QDs) with excellent nonlinear optical properties by using benzyl mercaptan (BM) as the interlinker. The mercapto substituent of BM binds to the CdS QDs during their nucleation and growth process, and then the phenyl comes into contact with the GNS via the π-π stacking interaction. Using this strategy, CdS QDs with an average diameter of 3 nm are uniformly dispersed over the surface of graphene, and the resulting QD-graphene composite exhibits excellent optical limiting properties, mainly contributed by nonlinear scattering and nonlinear absorption, upon both 532 and 1064 nm excitations, in the nanosecond laser pulse regime.

Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

Energy Technology Data Exchange (ETDEWEB)

Korenev, V. V., E-mail: korenev@spbau.ru; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. [Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

2013-10-15

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

International Nuclear Information System (INIS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2013-01-01

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots

Integrated photonics using colloidal quantum dots

Science.gov (United States)

Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

2009-11-01

Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

Strain-tunable quantum dot devices

International Nuclear Information System (INIS)

Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.

2011-01-01

We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.

Outer Retinal and Choroidal Evaluation in Multiple Evanescent White Dot Syndrome (MEWDS): An Enhanced Depth Imaging Optical Coherence Tomography Study.

Science.gov (United States)

Fiore, Tito; Iaccheri, Barbara; Cerquaglia, Alessio; Lupidi, Marco; Torroni, Giovanni; Fruttini, Daniela; Cagini, Carlo

2018-01-01

To perform an analysis of optical coherence tomography (OCT) abnormalities in patients with MEWDS, during the acute and recovery stages, using enhanced depth imaging-OCT (EDI-OCT). A retrospective case series of five patients with MEWDS was included. EDI-OCT imaging was evaluated to detect retinal and choroidal features. In the acute phase, focal impairment of the ellipsoid zone and external limiting membrane, hyperreflective dots in the inner choroid, and full-thickness increase of the choroidal profile were observed in the affected eye; disappearance of these findings and restoration of the choroidal thickness (p = 0.046) was appreciated in the recovery phase. No OCT abnormalities were assessed in the unaffected eye. EDI-OCT revealed transient outer retinal layer changes and inner choroidal hyperreflective dots. A transient increased thickness of the whole choroid was also identified. This might confirm a short-lasting inflammatory involvement of the whole choroidal tissue in the active phase of MEWDS.

Design strategy for terahertz quantum dot cascade lasers.

Science.gov (United States)

Burnett, Benjamin A; Williams, Benjamin S

2016-10-31

The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.

Tuning Single Quantum Dot Emission with a Micromirror.

Science.gov (United States)

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

Charge-extraction strategies for colloidal quantum dot photovoltaics

KAUST Repository

Lan, Xinzheng

2014-02-20

The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

Featured Image: Bright Dots in a Sunspot

Science.gov (United States)

Kohler, Susanna

2018-03-01

This image of a sunspot, located in in NOAA AR 12227, was captured in December 2014 by the 0.5-meter Solar Optical Telescope on board the Hinode spacecraft. This image was processed by a team of scientists led by Rahul Yadav (Udaipur Solar Observatory, Physical Research Laboratory Dewali, India) in order to examine the properties of umbral dots: transient, bright features observed in the umbral region (the central, darkest part) of a sunspot. By exploring these dots, Yadav and collaborators learned how their properties relate to the large-scale properties of the sunspots in which they form for instance, how do the number, intensities, or filling factors of dots relate to the size of a sunspots umbra? To find out more about the authors results, check out the article below.Sunspot in NOAA AR 11921. Left: umbralpenumbral boundary. Center: the isolated umbra from the sunspot. Right: The umbra with locations of umbral dots indicated by yellow plus signs. [Adapted from Yadav et al. 2018]CitationRahul Yadav et al 2018 ApJ 855 8. doi:10.3847/1538-4357/aaaeba

DotLens smartphone microscopy for biological and biomedical applications (Conference Presentation)

Science.gov (United States)

Sung, Yu-Lung; Zhao, Fusheng; Shih, Wei-Chuan

2017-02-01

Recent advances in inkjet-printed optics have created a new class of lens fabrication technique. Lenses with a tunable geometry, magnification, and focal length can be fabricated by dispensing controlled amounts of liquid polymer onto a heated surface. This fabrication technique is highly cost-effective, and can achieve optically smooth surface finish. Dubbed DotLens, a single of which weighs less than 50 mg and occupies a volume less than 50 μL. DotLens can be attached onto any smartphone camera akin to a contact lens, and enable smartphones to obtain image resolution as fine as 1 µm. The surface curvature modifies the optical path of light to the image sensor, and enables the camera to focus as close as 2 mm. This enables microscopic imaging on a smartphone without any additional attachments, and has shown great potential in mobile point-of-care diagnostic systems, particularly for histology of tissue sections and cytology of blood cells. DotLens Smartphone Microscopy represents an innovative approach fundamentally different from other smartphone microscopes. In this paper, we describe the application and performance of DotLens smartphone microscopy in biological and biomedical research. In particular, we show recent results from images collected from pathology tissue slides with cancer features. In addition, we show performance in cytological analysis of blood smear. This tool has empowered Citizen Science investigators to collect microscopic images from various interesting objects.

Diffuse Optical Tomography for Brain Imaging: Theory

Science.gov (United States)

Yuan, Zhen; Jiang, Huabei

Diffuse optical tomography (DOT) is a noninvasive, nonionizing, and inexpensive imaging technique that uses near-infrared light to probe tissue optical properties. Regional variations in oxy- and deoxy-hemoglobin concentrations as well as blood flow and oxygen consumption can be imaged by monitoring spatiotemporal variations in the absorption spectra. For brain imaging, this provides DOT unique abilities to directly measure the hemodynamic, metabolic, and neuronal responses to cells (neurons), and tissue and organ activations with high temporal resolution and good tissue penetration. DOT can be used as a stand-alone modality or can be integrated with other imaging modalities such as fMRI/MRI, PET/CT, and EEG/MEG in studying neurophysiology and pathology. This book chapter serves as an introduction to the basic theory and principles of DOT for neuroimaging. It covers the major aspects of advances in neural optical imaging including mathematics, physics, chemistry, reconstruction algorithm, instrumentation, image-guided spectroscopy, neurovascular and neurometabolic coupling, and clinical applications.

Optical properties of polymer nanocomposites

Indian Academy of Sciences (India)

Wintec

, optical sensors, optical data communication and optical ... our filters (Leon et al 2001), solar cells and optical sen- sors (Tanaka et al 1991; Tokizaki et .... volume fractions (Top panel: tanψ for volume fractions, 1⋅2%. (dash) and 0⋅6% (dot); ...

Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage

International Nuclear Information System (INIS)

Shun-Cai, Zhao; Zheng-Dong, Liu

2009-01-01

We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

Functional Carbon Quantum Dots: A Versatile Platform for Chemosensing and Biosensing.

Science.gov (United States)

Feng, Hui; Qian, Zhaosheng

2018-05-01

Carbon quantum dot has emerged as a new promising fluorescent nanomaterial due to its excellent optical properties, outstanding biocompatibility and accessible fabrication methods, and has shown huge application perspective in a variety of areas, especially in chemosensing and biosensing applications. In this personal account, we give a brief overview of carbon quantum dots from its origin and preparation methods, present some advance on fluorescence origin of carbon quantum dots, and focus on development of chemosensors and biosensors based on functional carbon quantum dots. Comprehensive advances on functional carbon quantum dots as a versatile platform for sensing from our group are included and summarized as well as some typical examples from the other groups. The biosensing applications of functional carbon quantum dots are highlighted from selective assays of enzyme activity to fluorescent identification of cancer cells and bacteria. © 2018 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nonequilibrium carrier dynamics in self-assembled InGaAs quantum dots

International Nuclear Information System (INIS)

Wesseli, M.; Ruppert, C.; Trumm, S.; Betz, M.; Krenner, H.J.; Finley, J.J.

2006-01-01

Carrier dynamics in InGaAs/GaAs quantum dots is analyzed with highly sensitive femtosecond transmission spectroscopy. In a first step, measurements on a large ensemble of nanoislands reveal the dynamical electronic filling of quantum dots from the surrounding wetting layer. Most interestingly, we find a spin-preserving phonon mediated scattering into fully localized states within a few picoseconds. Then, individual artificial atoms are isolated with metallic shadow masks. For the first time, a single self-assembled quantum dot is addressed in an ultrafast transmission experiment. We find bleaching signals in the order of 10 -5 that arise from individual interband transitions of one quantum dot. As a result, we have developed an ultrafast optical tool for both manipulation and read-out of a single self-assembled quantum dot. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polaron effects on the linear and the nonlinear optical absorption coefficients and refractive index changes in cylindrical quantum dots with applied magnetic field

International Nuclear Information System (INIS)

Wu Qingjie; Guo Kangxian; Liu Guanghui; Wu Jinghe

2013-01-01

Polaron effects on the linear and the nonlinear optical absorption coefficients and refractive index changes in cylindrical quantum dots with the radial parabolic potential and the z-direction linear potential with applied magnetic field are theoretically investigated. The optical absorption coefficients and refractive index changes are presented by using the compact-density-matrix approach and iterative method. Numerical calculations are presented for GaAs/AlGaAs. It is found that taking into account the electron-LO-phonon interaction, not only are the linear, the nonlinear and the total optical absorption coefficients and refractive index changes enhanced, but also the total optical absorption coefficients are more sensitive to the incident optical intensity. It is also found that no matter whether the electron-LO-phonon interaction is considered or not, the absorption coefficients and refractive index changes above are strongly dependent on the radial frequency, the magnetic field and the linear potential coefficient.

Semiconductor Quantum Dots with Photoresponsive Ligands.

Science.gov (United States)

Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

2016-10-01

Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

Precursor concentration and temperature controlled formation of polyvinyl alcohol-capped CdSe-quantum dots

Directory of Open Access Journals (Sweden)

Chetan P. Shah

2010-12-01

Full Text Available Polyvinyl alcohol-capped CdSe quantum dots, with a size within their quantum confinement limit, were prepared in aqueous solution at room temperature, by a simple and environmentally friendly chemical method. The size of the CdSe quantum dots was found to be dependent on the concentrations of the precursors of cadmium and selenium ions, as well as on the aging time and the reaction temperature; all of which could be used conveniently for tuning the size of the particles, as well as their optical properties. The synthesized quantum dots were characterized by optical absorption spectroscopy, fluorescence spectroscopy, X-ray diffraction, atomic force microscopy and transmission electron microscopy. The samples were fluorescent at room temperature; the green fluorescence was assigned to band edge emission, and the near-infrared fluorescence peaks at about 665 and 865 nm were assigned to shallow and deep trap states emissions, respectively. The quantum dots were fairly stable up to several days.

Few-Photon Model of the Optical Emission of Semiconductor Quantum Dots

Science.gov (United States)

Richter, Marten; Carmele, Alexander; Sitek, Anna; Knorr, Andreas

2009-08-01

The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability cluster expansion: a reliable approach for few-photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi oscillations and show that their amplitude determines the number of electrons in the quantum dot.

Optical rectification in a strained GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot: Simultaneous effects of electric and magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Vinolin, Ada [Dept. of Physics, Madurai Kamaraj University College, Alagarkoil Road, Madurai-625002 (India); Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)

2014-04-24

Simultaneous effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} strained quantum dot are investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Optical rectification in the GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot is computed in the presence of electric and magnetic fields.

Single-photon generator for optical telecommunication wavelength

International Nuclear Information System (INIS)

Usuki, T; Sakuma, Y; Hirose, S; Takemoto, K; Yokoyama, N; Miyazawa, T; Takatsu, M; Arakawa, Y

2006-01-01

We report on the generation of single-photon pulses from a single InAs/InP quantum dot in telecommunication bands (1.3-1.55 μm: higher transmittance through an optical fiber). First we prepared InAs quantum dots on InP (0 0 1) substrates in a low-pressure MOCVD by using a so-called InP 'double-cap' procedure. The quantum dots have well-controlled photo emission wavelength in the telecommunication bands. We also developed a single-photon emitter in which quantum dots were embedded. Numerical simulation designed the emitter to realize efficient injection of the emitted photons into a single-mode optical fiber. Using a Hanbury-Brown and Twiss technique has proved that the photons through the fiber were single photons

Electrical and optical measurements on a single InAs quantum dot using ion-implanted micro-LEDs; Elektrische und optische Untersuchungen an einem einzelnen InAs-Quantenpunkt mit Hilfe ionenstrahlimplantierter Mikro-LEDs

Energy Technology Data Exchange (ETDEWEB)

Schmidt, R.F.

2006-10-19

The goal of this present thesis was to electrically and optically address a single InAs quantum dot. Therefore micro-structured quantum-dot-LEDs with an emission area smaller than 1 {mu}m{sup 2} were developed. One major part of this work was contributed to optimizing several steps of the micro-LED fabrication process. To be able to compare the electrical conductivity obtained from Hall-measurements to the expected values, the implantation profile was investigated both theoretically and experimentally. As the thermal annealing step had to be performed in the growth chamber of the MBE-system several annealing parameters had to be modified to achieve optimum electrical conductivity and quantum dot growth. For one of the Be-implanted pin-samples the principle of the single-quantum-dot-LEDs could be proved. The smallest device of this sample, with nominal stripe widths of 150 nm (FIB-stripe) and 400 nm (top-stripe), showed typical features of a single quantum dot. In the high-resolution EL-spectra of this device three extremely sharp emission lines were observed which clearly could be assigned to the electron-hole recombination from a single quantum dot. To further identify the origin of these lines their optical intensities were plotted against the injection current. From this plot it could be deduced, that the first evolving line clearly belongs to the simple exciton 1X. The following lines could be assigned to the decay of the biexciton 2X and the triexciton 3X{sub s}, respectively. With increasing bias all three lines show a pronounced red-shift due to the quantum confined Stark effect (QCSE). To identify the charge state of the observed excitonic lines, additional high-resolution IV curves were taken. (orig.)

Reinventing a health sciences digital library--organizational impact.

Science.gov (United States)

Moore, Margaret E; Garrison, Scott; Hayes, Barrie; McLendon, Wallace

2003-01-01

What is the organizational impact of becoming a digital library, as well as a physical entity with facilities and collections? Is the digital library an add-on or an integrated component of the overall library package? Librarians see sweeping environmental and technological changes. The staff members feel exhilarated and challenged by the pressures to adapt quickly and effectively. Librarians recognize that a Web presence, like other technology components, must be continuously enhanced and regularly re-engineered. The Health Sciences Library, University of North Carolina at Chapel Hill, is reinventing its digital presence to better meet the needs of the community. This paper provides a case study focusing on major changes in planning processes, organizational structure, staffing, budgeting, training, communications, and operations at the Health Sciences Library.

Reinventing Fractions and Division as They Are Used in Algebra: The Power of Preformal Productions

Science.gov (United States)

Peck, Frederick; Matassa, Michael

2016-01-01

In this paper, we explore algebra students' mathematical realities around fractions and division, and the ways in which students reinvented mathematical productions involving fractions and division. We find that algebra students' initial realities do not include the fraction-as-quotient sub-construct. This can be problematic because in algebra,…

Effect of gamma-ray irradiation on the size and properties of CdS quantum dots in reverse micelles

International Nuclear Information System (INIS)

Bekasova, O.D.; Revina, A.A.; Rusanov, A.L.; Kornienko, E.S.; Kurganov, B.I.

2013-01-01

Cadmium sulfide quantum dots 1.3–5.6 nm in size have been synthesized in sodium bis(2-ethylhexy1)sulfosuccinate (AOT)–water–isooctane micellar solutions with various [H 2 O]/[AOT] molar ratios (w=2.5, 5.0 or 10). Gamma irradiation method has been used to change the size and optical properties of quantum dots. It has been found that γ-irradiation reduces the size polydispersity of quantum dots in the micellar system and alters their fluorescent properties. Fluorescence intensity is enhanced after γ-irradiation. The average fluorescence lifetime of single quantum dots sized 5.2±0.4 nm increases from 5.14 to 6.39 ns after γ-irradiation at a dose of 7.9 kGy. To the best of our knowledge, this is the first report on fluorescence lifetime of single CdS quantum dots in micellar solution. - Highlights: • Gamma irradiation method has been used successfully to change the size and optical properties of CdS quantum dots synthesized in micellar solutions. • γ-Irradiation reduces the size polydispersity of quantum dots in the micellar system. • Fluorescence intensity of CdS quantum dots is enhanced after γ-irradiation. • Fluorescence lifetime of single CdS quantum dots increases after γ-irradiation

Sub-diffraction positioning of a two-photon excited and optically trapped quantum dot

DEFF Research Database (Denmark)

Pedersen, Liselotte Jauffred; Kyrsting, Anders Højbo; Christensen, Eva Arnspang

2014-01-01

Colloidal quantum dots are luminescent long-lived probes that can be two-photon excited and manipulated by a single laser beam. Therefore, quantum dots can be used for simultaneous single molecule visualization and force manipulation using an infra-red laser. Here, we show that even a single opti...

Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

International Nuclear Information System (INIS)

Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

2009-01-01

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

Electrically tunable single-dot nanocavities in the weak and strong coupling regimes

DEFF Research Database (Denmark)

Laucht, Arne; Hofbauer, Felix; Angele, Jacob

2008-01-01

We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities [1] operating in both the weak and strong coupling regimes of the light matter interaction. Unlike previous studies, where the dot-cavity spectral detuning...... of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. Vacuum Rabi splittings up to 2g...... electrical readout of the strongly coupled dot-cavity system using photocurrent methods will be discussed. This work is financially supported by the DFG via SFB 631 and by the German Excellence Initiative via the “Nanosystems Initiative Munich (NIM)”....

Stimulated emission and lasing from all-inorganic perovskite quantum dots

Science.gov (United States)

Sun, Handong; Wang, Yue; Li, Xiaoming; Haibo, Zeng

We present superior optical gain and lasing properties in a new class of emerging quantum materials, the colloidal all-inorganic cesium lead halide perovskite quantum dots (IPQDs) (CsPbX3, X = Cl, Br, I). Our result has indicated that such material system show combined merits of both colloidal quantum dots and halide perovskites. Low-threshold and ultrastable stimulated emission was demonstrated under atmospheric condition. The flexibility and advantageous optical gain properties of these CsPbX3 IPQDs were manifested by demonstration of an optically pumped micro-laser. The nonlinear optical properties including the multi-photon absorption and resultant photoluminescence of the CsPbX3 nanocrystals were investigated. A large two-photon absorption cross-section of up to ~1.2×105 GM is determined from 9 nm-sized CsPbBr3 nanocrystals. Moreover, low-threshold frequency-upconverted stimulated emission by two-photon absorption was observed from the thin films of close-packed CsPbBr3 nanocrystals. We further realize the three-photon pumped stimulated emission in green spectra range from colloidal IPQD.

Linear and nonlinear intersubband optical absorption in a disk-shaped quantum dot with a parabolic potential plus an inverse squared potential in a static magnetic field

Energy Technology Data Exchange (ETDEWEB)

Liu Guanghui [Department of Physics, College of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006 (China); Guo Kangxian, E-mail: axguo@sohu.com [Department of Physics, College of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006 (China); Wang Chao [Institute of Public Administration, Guangzhou University, Guangzhou 510006 (China)

2012-06-15

The linear and nonlinear optical absorption in a disk-shaped quantum dot (DSQD) with parabolic potential plus an inverse squared potential in the presence of a static magnetic field are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron in the DSQD are obtained by using the effective mass approximation. Numerical calculations are presented for typical GaAs/AlAs DSQD. It is found that the optical absorption coefficients are strongly affected not only by a static magnetic field, but also by the strength of external field, the confinement frequency and the incident optical intensity.

Linear and nonlinear intersubband optical absorption in a disk-shaped quantum dot with a parabolic potential plus an inverse squared potential in a static magnetic field

International Nuclear Information System (INIS)

Liu Guanghui; Guo Kangxian; Wang Chao

2012-01-01

The linear and nonlinear optical absorption in a disk-shaped quantum dot (DSQD) with parabolic potential plus an inverse squared potential in the presence of a static magnetic field are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron in the DSQD are obtained by using the effective mass approximation. Numerical calculations are presented for typical GaAs/AlAs DSQD. It is found that the optical absorption coefficients are strongly affected not only by a static magnetic field, but also by the strength of external field, the confinement frequency and the incident optical intensity.

CdZnTe quantum dots study: energy and phase relaxation process