WorldWideScience

Sample records for doped wide band

  1. Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

    KAUST Repository

    Li, Yongfeng; Deng, Rui; Lin, Weinan; Tian, Yufeng; Peng, Haiyang; Yi, Jiabao; Yao, Bin; Wu, Tao

    2013-01-01

    As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

  2. Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

    KAUST Repository

    Li, Yongfeng

    2013-04-29

    As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

  3. Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Motaung, DE

    2014-08-01

    Full Text Available Surface Science Vol. 311, pp 14-26 Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis D.E. Motaunga,∗, I. Kortidise, D. Papadakie, S.S. Nkosib,∗∗, G.H. Mhlongoa,J. Wesley-Smitha, G.F. Malgasc, B....W. Mwakikungaa, E. Coetseed, H.C. Swartd,G. Kiriakidise,f, S.S. Raya aDST/CSIR Nanotechnology Innovation Centre, National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395,Pretoria 0001, South Africa b...

  4. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

  5. Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors

    National Research Council Canada - National Science Library

    Hommerich, Uwe

    1999-01-01

    ...+) PL intensity under below gap excitation. Photoluminescence excitation (PLE) studies revealed that oxygen/carbon introduces a broad below gap PLE band, which provides an efficient pathway for E(3+) excitation...

  6. Crystal-field investigations of rare-earth-doped wide band gap semiconductors

    CERN Multimedia

    Muller, S; Wahl, U

    Crystal field investigations play a central role in the studies of rare earth doped semiconductors. Optical stark level spectroscopy and lattice location studies of radioactive rare earth isotopes implanted at ISOLDE have provided important insight into these systems during the last years. It has been shown that despite a major site preference of the probe atoms in the lattice, several defect configurations do exist. These sites are visible in the optical spectra but their origin and nature aren't deducible from these spectra alone. Hyperfine measurements on the other hand should reveal these defect configurations and yield the parameters necessary for a description of the optical properties at the atomic scale. In order to study the crystal field with this alternative approach, we propose a new concept for perturbed $\\gamma\\gamma$-angular correlation (PAC) experiments at ISOLDE based on digital signal processing in contrast to earlier analog setups. The general functionality of the spectrometer is explained ...

  7. Ultra wide band antennas

    CERN Document Server

    Begaud, Xavier

    2013-01-01

    Ultra Wide Band Technology (UWB) has reached a level of maturity that allows us to offer wireless links with either high or low data rates. These wireless links are frequently associated with a location capability for which ultimate accuracy varies with the inverse of the frequency bandwidth. Using time or frequency domain waveforms, they are currently the subject of international standards facilitating their commercial implementation. Drawing up a complete state of the art, Ultra Wide Band Antennas is aimed at students, engineers and researchers and presents a summary of internationally recog

  8. Wide band ENDOR spectrometer

    International Nuclear Information System (INIS)

    Mendonca Filho, C.

    1973-01-01

    The construction of an ENDOR spectrometer operating from 0,5 to 75 MHz within a single band, with ore Klystron and homodine detection, and no fundamental changes on the electron spin resonance spectrometer was described. The ENDOR signal can be detected both by amplitude modulation of the frequency field, or direct detection of the ESR output, which is taken to a signal analyser. The signal-to-noise ratio is raised by averaging rather than filtering avoiding the use of long time constants, providing natural line widths. The experimental apparatus and the spectra obtained are described. A discussion, relating the ENDOR line amplitudes with the experimental conditions is done and ENDOR mechanism, in which there is a relevant presence of cross relaxation is proposed

  9. Wide Band to ''Double Band'' upgrade

    International Nuclear Information System (INIS)

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

  10. The role of deep acceptor centers in the oxidation of acceptor-doped wide-band-gap perovskites ABO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Putilov, L.P., E-mail: lev.putilov@gmail.com; Tsidilkovski, V.I.

    2017-03-15

    The impact of deep acceptor centers on defect thermodynamics and oxidation of wide-band-gap acceptor-doped perovskites without mixed-valence cations is studied. These deep centers are formed by the acceptor-bound small hole polarons whose stabilization energy can be high enough (significantly higher than the hole-acceptor Coulomb interaction energy). It is shown that the oxidation enthalpy ΔH{sub ox} of oxide is determined by the energy ε{sub A} of acceptor-bound states along with the formation energy E{sub V} of oxygen vacancies. The oxidation reaction is demonstrated to be either endothermic or exothermic, and the regions of ε{sub A} and E{sub V} values corresponding to the positive or negative ΔH{sub ox} are determined. The contribution of acceptor-bound holes to the defect thermodynamics strongly depends on the acceptor states depth ε{sub A}: it becomes negligible at ε{sub A} less than a certain value (at which the acceptor levels are still deep). With increasing ε{sub A}, the concentration of acceptor-bound small hole polarons can reach the values comparable to the dopant content. The results are illustrated with the acceptor-doped BaZrO{sub 3} as an example. It is shown that the experimental data on the bulk hole conductivity of barium zirconate can be described both in the band transport model and in the model of hopping small polarons localized on oxygen ions away from the acceptor centers. Depending on the ε{sub A} magnitude, the oxidation reaction can be either endothermic or exothermic for both mobility mechanisms.

  11. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  12. NCenter wide band neutrino beam

    International Nuclear Information System (INIS)

    Stutte, L.G.

    1985-01-01

    This memo describes the physical properties of the currently operating N-Center wide band neutrino beam---commonly called the triplet train, following a past tradition of a triplet lens configuration. In reality, in order to gain a larger momentum acceptance and to minimize the angular divergence of the beam, a quadruplet beam (4 lenses) employing point-to-parallel optics at a central momentum of 300 GeV was built. 6 refs., 13 figs., 1 tab

  13. Wide spectral band beam analysis

    Science.gov (United States)

    Aharon, Oren

    2015-03-01

    The reality in laser beam profiling is that measurements are performed over a wide spectrum of wavelengths and power ranges. Many applications use multiple laser wavelengths with very different power levels, a fact which dictates a need for a better measuring tool. Rapid progress in the fiber laser area has increased the demand for lasers in the wavelength range of 900 - 1030 nm, while the telecommunication market has increased the demand for wavelength range of 1300nm - 1600 nm, on the other hand the silicone chip manufacturing and mass production requirements tend to lower the laser wavelength towards the 190nm region. In many cases there is a need to combine several lasers together in order to perform a specific task. A typical application is to combine one visible laser for pointing, with a different laser for material processing with a very different wavelength and power level. The visible laser enables accurate pointing before the second laser is operated. The beam profile of the intensity distribution is an important parameter that indicates how a laser beam will behave in an application. Currently a lab, where many different lasers are used, will find itself using various laser beam profilers from several vendors with different specifications and accuracies. It is the propose of this article to present a technological breakthrough in the area of detectors, electronics and optics allowing intricate measurements of lasers with different wavelength and with power levels that vary many orders of magnitude by a single beam profiler.

  14. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    International Nuclear Information System (INIS)

    Valenti, Ilaria; Valeri, Sergio; Benedetti, Stefania; Bona, Alessandro di; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-01-01

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general

  15. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    Energy Technology Data Exchange (ETDEWEB)

    Valenti, Ilaria; Valeri, Sergio [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy); Benedetti, Stefania, E-mail: stefania.benedetti@unimore.it; Bona, Alessandro di [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome, Italy and Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Perucchi, Andrea; Di Pietro, Paola [INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Trieste (Italy); Lupi, Stefano [CNR-IOM and Dipartimento di Fisica, Università di Roma Sapienza, P.le Aldo Moro 2, I-00185 Roma (Italy); Torelli, Piero [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy)

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  16. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  17. Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

    KAUST Repository

    Zhou, Hang; Deng, Rui; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Wang, Qingxiao; Han, Yu; Wu, Tao; Liu, Lei

    2014-01-01

    at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014

  18. Panchromatic cooperative hyperspectral adaptive wide band deletion repair method

    Science.gov (United States)

    Jiang, Bitao; Shi, Chunyu

    2018-02-01

    In the hyperspectral data, the phenomenon of stripe deletion often occurs, which seriously affects the efficiency and accuracy of data analysis and application. Narrow band deletion can be directly repaired by interpolation, and this method is not ideal for wide band deletion repair. In this paper, an adaptive spectral wide band missing restoration method based on panchromatic information is proposed, and the effectiveness of the algorithm is verified by experiments.

  19. Wide-band segmented power distribution networks

    NARCIS (Netherlands)

    Tereshchenko, O.V.; Buesink, Frederik Johannes Karel; Leferink, Frank Bernardus Johannes

    2013-01-01

    This paper discusses a novel design of Power Distribution Network (PDN). By physical structuring of the power plane into repetitive symmetrical and asymmetrical segments of varying size, suppression of the propagation of unwanted noise throughout the PDN over a wide frequency range is achieved.

  20. Polarization catastrophe in nanostructures doped in photonic band gap materials

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)], E-mail: msingh@uwo.ca

    2008-11-30

    In the presence of the dipole-dipole interaction, we have studied a possible dielectric catastrophe in photonic band gap materials doped with an ensemble of four-level nanoparticles. It is found that the dielectric constant of the system has a singularity when the resonance energy lies within the bands. This phenomenon is known as the dielectric catastrophe. It is also found that this phenomenon depends on the strength of the dipole-dipole interaction.

  1. Doping-dependent quasiparticle band structure in cuprate superconductors

    NARCIS (Netherlands)

    Eder, R; Ohta, Y.; Sawatzky, G.A

    1997-01-01

    We present an exact diagonalization study of the single-particle spectral function in the so-called t-t'-t ''-J model in two dimensions. As a key result, we find that hole doping leads to a major reconstruction of the quasiparticle band structure near (pi,0): whereas for the undoped system the

  2. Integrated wide-band low-background amplifiers

    International Nuclear Information System (INIS)

    Il'yushchenko, I.I.

    1980-01-01

    Ways of increasing stability and reproduction of characteristics of wide-band integral amplifiers that would to the least extent increase their background noises, are discussed. Considered are some certain flowsheets of integral wide-band amplifiers with low background noise of foreign production which differ from one another by construction of inlet cascades as well as by the applied feedback type. The principal flowsheets of the amplifiers and their main performances are presented. The analysis of the data obtained has revealed that microcircuits made of cascades with a common emitter and local combined feedback are most wide-band among all the considered microcircuits [ru

  3. Exposure measuring techniques for wide band mobile radio-communications

    International Nuclear Information System (INIS)

    Trinchero, S.; Benedetto, A.; Anglesio, L.; D'Amore, G.; Trinchero, D.

    2004-01-01

    The paper illustrates the limits and performances of different experimental monitoring techniques, which are applied to digitally modulated radiofrequency electromagnetic fields used for mobile telecommunications. Different experimental set-ups have been developed, verified and applied for the analysis and characterisation of wide band probes and narrow band measuring procedures. (authors)

  4. Wide-band slow-wave systems simulation and applications

    CERN Document Server

    Staras, Stanislovas

    2012-01-01

    The field of electromagnetics has seen considerable advances in recent years, based on the wide applications of numerical methods for investigating electromagnetic fields, microwaves, and other devices. Wide-Band Slow-Wave Systems: Simulation and Applications presents new technical solutions and research results for the analysis, synthesis, and design of slow-wave structures for modern electronic devices with super-wide pass-bands. It makes available, for the first time in English, significant research from the past 20 years that was previously published only in Russian and Lithuanian. The aut

  5. Doped silicene: Evidence of a wide stability range

    KAUST Repository

    Cheng, Yingchun

    2011-06-17

    The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.

  6. Designing Phononic Crystals with Wide and Robust Band Gaps

    Science.gov (United States)

    Jia, Zian; Chen, Yanyu; Yang, Haoxiang; Wang, Lifeng

    2018-04-01

    Phononic crystals (PnCs) engineered to manipulate and control the propagation of mechanical waves have enabled the design of a range of novel devices, such as waveguides, frequency modulators, and acoustic cloaks, for which wide and robust phononic band gaps are highly preferable. While numerous PnCs have been designed in recent decades, to the best of our knowledge, PnCs that possess simultaneous wide and robust band gaps (to randomness and deformations) have not yet been reported. Here, we demonstrate that by combining the band-gap formation mechanisms of Bragg scattering and local resonances (the latter one is dominating), PnCs with wide and robust phononic band gaps can be established. The robustness of the phononic band gaps are then discussed from two aspects: robustness to geometric randomness (manufacture defects) and robustness to deformations (mechanical stimuli). Analytical formulations further predict the optimal design parameters, and an uncertainty analysis quantifies the randomness effect of each designing parameter. Moreover, we show that the deformation robustness originates from a local resonance-dominant mechanism together with the suppression of structural instability. Importantly, the proposed PnCs require only a small number of layers of elements (three unit cells) to obtain broad, robust, and strong attenuation bands, which offer great potential in designing flexible and deformable phononic devices.

  7. Designing Phononic Crystals with Wide and Robust Band Gaps

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yanyu [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jia, Zian [State University of New York at Stony Brook; Yang, Haoxiang [State University of New York at Stony Brook; Wang, Lifeng [State University of New York at Stony Brook

    2018-04-16

    Phononic crystals (PnCs) engineered to manipulate and control the propagation of mechanical waves have enabled the design of a range of novel devices, such as waveguides, frequency modulators, and acoustic cloaks, for which wide and robust phononic band gaps are highly preferable. While numerous PnCs have been designed in recent decades, to the best of our knowledge, PnCs that possess simultaneous wide and robust band gaps (to randomness and deformations) have not yet been reported. Here, we demonstrate that by combining the band-gap formation mechanisms of Bragg scattering and local resonances (the latter one is dominating), PnCs with wide and robust phononic band gaps can be established. The robustness of the phononic band gaps are then discussed from two aspects: robustness to geometric randomness (manufacture defects) and robustness to deformations (mechanical stimuli). Analytical formulations further predict the optimal design parameters, and an uncertainty analysis quantifies the randomness effect of each designing parameter. Moreover, we show that the deformation robustness originates from a local resonance-dominant mechanism together with the suppression of structural instability. Importantly, the proposed PnCs require only a small number of layers of elements (three unit cells) to obtain broad, robust, and strong attenuation bands, which offer great potential in designing flexible and deformable phononic devices.

  8. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

    International Nuclear Information System (INIS)

    Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

    2013-01-01

    Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

  9. Conduction band edge effective mass of La-doped BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming [Physics Department, University of California, Santa Barbara, California 93106-5100 (United States); Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-06-20

    BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

  10. Doped silicene: Evidence of a wide stability range

    KAUST Repository

    Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

    2011-01-01

    to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced

  11. Visible-light activity of N-LiInO{sub 2}: Band structure modifications through interstitial nitrogen doping

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Kaiqiang [College of Material Science and Engineering, Hunan University, Changsha, 410082 (China); Xu, Difa, E-mail: xudifa@sina.com [Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China); Zhang, Xiangchao; Luo, Zhuo; Wang, Yutang [Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China); Zhang, Shiying, E-mail: cdzhangshiying@163.com [College of Material Science and Engineering, Hunan University, Changsha, 410082 (China); Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China)

    2017-01-01

    Highlights: • The interstitial nitrogen doping into LiInO{sub 2} is achieved at low temperature. • The band gap narrowing to an extent of 2.8 eV from 3.5 eV is observed. • The doping favours charge carrier separation and photocatalytic activity. • Superoxide radical is the dominant active specie in the pollutant degradation. - Abstract: Element doping is a promising strategy to improve the photo-response and photocatalytic activity of semiconductor photocatalyst with a wide band gap. To reduce the band gap of LiInO{sub 2} that is considered as a novel photocatalyst, nitrogen-doped LiInO{sub 2} (N-LiInO{sub 2}) is successfully fabricated by treating LiInO{sub 2} and urea at 200 °C. It is found that interstitial instead of substitutional configurations are formed in the crystal structure of N-LiInO{sub 2} due to the low-treating temperature and rich-oxygen conditions. The interstitial N-doping forms a doping state with 0.6 eV above the valence band maximum and a defect state with 0.1 eV below the conduction band minimum, reducing the band gap of LiInO{sub 2} from 3.5 to 2.8 eV. N-LiInO{sub 2} exhibits higher photocatalytic activity towards methylene blue (MB) degradation under 380 nm light irradiation, which is 1.4 times that of pure LiInO{sub 2}. The enhanced photocatalytic activity of N-LiInO{sub 2} is attributed to the extended light absorption and the improved charge carrier separation, which result in more reactive species participating in the photcatalytic process. This work provides a further understanding on tuning the band structure of semiconductor photocatalyst by N-doping strategies.

  12. UWB Filtering Power Divider with Two Narrow Notch-bands and Wide Stop-band

    Science.gov (United States)

    Wei, Feng; Wang, Xin-Yi; Zou, Xin Tong; Shi, Xiao Wei

    2017-12-01

    A compact filtering ultra-wideband (UWB) microstrip power divider (PD) with two sharply rejected notch-bands and wide stopband is analyzed and designed in this paper. The proposed UWB PD is based on a conventional Wilkinson power divider, while two stub loaded resonators (SLRs) are coupled into two symmetrical output ports to achieve a bandpass filtering response. The simplified composite right/left-handed (SCRLH) resonators are employed to generate the dual notched bands. Defected ground structure (DGS) is introduced to improve the passband performance. Good insertion/return losses, isolation and notch-band rejection are achieved as demonstrated in both simulation and experiment.

  13. Multislot microstrip antenna for ultra-wide band applications

    Directory of Open Access Journals (Sweden)

    Noor M. Awad

    2018-01-01

    Full Text Available In this paper designs of both planar ultra-wide band (UWB antenna and UWB antenna with two rejected bands are given. The antenna consists of a rectangular patch etched on FR4-substrate with 50 Ω feed line. The rectangular patch has one round cut at each corner with one slot in the ground plane. The simulated bandwidth with return loss (RL ⩾ 10 dB is 3.42–11.7 GHz. The rejected bands are the WLAN and X-bands, achieved by inserting slots in the patch and the feed. The simulated results of the proposed antenna indicate higher gain at the passbands while a sharp drop at the rejected bands is seen. The radiation pattern is of dipole shape in the E-plane and almost omnidirectional in the H-plane. The high frequency structure simulator (HFSS is used to design and simulate the antennas behavior over the different frequency ranges. Measurements confirm the antenna characteristic as predicted in the simulation with a slight shift in frequencies.

  14. From Narrow to Wide Band Normalizer for LHC

    CERN Document Server

    Vismara, Giuseppe

    1997-01-01

    The narrow band normalizer (NBN) based on the phase processor is working to full satisfaction in the LEP BOM system for almost 10 years. Recently a new idea for a wide band normaliser (WBN) based on a time processor exploiting a single oscillation period has been developed. The position information is converted into a time difference between the zero crossing of two recombined and shaped electrode signals. It appears that the NBN can be easily adapted to perform as a wide band processor. To do so, the BP filter and the 90° Hybrid are replaced by low pass filter and delay lines. A prototype based on the present NBN has been developed and tested to prove the feasibility of the new idea. The paper gives an overview of the advantages and limitations of the BOM NB processor. It summarizes the useful LHC parameters and describes the specifications for the beam position acquisition system. After describing the basic principles, it analyzes in detail all the blocks of the processing chain and presents the measurem...

  15. High gain L-band erbium-doped fiber amplifier with two-stage ...

    Indian Academy of Sciences (India)

    stage erbium-doped fiber amplifier; amplified spontaneous emission. Abstract. An experiment on gain enhancement in the long wavelength band erbium-doped fiber amplifier (L-band EDFA) is demonstrated using dual forward pumping scheme ...

  16. Robust indirect band gap and anisotropy of optical absorption in B-doped phosphorene.

    Science.gov (United States)

    Wu, Zhi-Feng; Gao, Peng-Fei; Guo, Lei; Kang, Jun; Fang, Dang-Qi; Zhang, Yang; Xia, Ming-Gang; Zhang, Sheng-Li; Wen, Yu-Hua

    2017-12-06

    A traditional doping technique plays an important role in the band structure engineering of two-dimensional nanostructures. Since electron interaction is changed by doping, the optical and electrochemical properties could also be significantly tuned. In this study, density functional theory calculations have been employed to explore the structural stability, and electronic and optical properties of B-doped phosphorene. The results show that all B-doped phosphorenes are stable with a relatively low binding energy. Of particular interest is that these B-doped systems exhibit an indirect band gap, which is distinct from the direct one of pure phosphorene. Despite the different concentrations and configurations of B dopants, such indirect band gaps are robust. The screened hybrid density functional HSE06 predicts that the band gap of B-doped phosphorene is slightly smaller than that of pure phosphorene. Spatial charge distributions at the valence band maximum (VBM) and the conduction band minimum (CBM) are analyzed to understand the features of an indirect band gap. By comparison with pure phosphorene, B-doped phosphorenes exhibit strong anisotropy and intensity of optical absorption. Moreover, B dopants could enhance the stability of Li adsorption on phosphorene with less sacrifice of the Li diffusion rate. Our results suggest that B-doping is an effective way of tuning the band gap, enhancing the intensity of optical absorption and improving the performances of Li adsorption, which could promote potential applications in novel optical devices and lithium-ion batteries.

  17. Inkjet-Printed Ultra Wide Band Fractal Antennas

    KAUST Repository

    Maza, Armando Rodriguez

    2012-05-01

    In this work, Paper-based inkjet-printed Ultra-wide band (UWB) fractal antennas are presented. Three new designs, a combined UWB fractal monopole based on the fourth order Koch Snowflake fractal which utilizes a Sierpinski Gasket fractal for ink reduction, a Cantor-based fractal antenna which performs a larger bandwidth compared to previously published UWB Cantor fractal monopole antenna, and a 3D loop fractal antenna which attains miniaturization, impedance matching and multiband characteristics. It is shown that fractals prove to be a successful method of reducing fabrication cost in inkjet printed antennas while retaining or enhancing printed antenna performance.

  18. Electronic materials with a wide band gap: recent developments

    Directory of Open Access Journals (Sweden)

    Detlef Klimm

    2014-09-01

    Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.

  19. Transistorized wide band pulse amplifier; Amplificateur d'impulsions a large bande et a transistors

    Energy Technology Data Exchange (ETDEWEB)

    Girard, J; Savinelli, H [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Hazoni, Y [Atomic Energy Commission (Israel)

    1960-07-01

    A simple wide band amplifier is described below, having a stability better than 1{sup 0}/00 deg{sup -1} centigrade, a current gain of 10{sup 3}, bandwidth of 30 MHz, and a signal to noise current ratio of about 100. This amplifier has been studied to answer the necessity of a fast transistor head amplifier for nuclear detectors, having in mind pile up and overloading problems. (author) [French] Un amplificateur simple, a large bande, est decrit ci-apres, il a une stabilite meilleure que le 0/00 par degre centigrade, un gain en courant de 10{sup 3} une largeur de bande de 30 MHz, et un rapport signal sur bruit en courant d'environ 100. Cet amplificateur a ete etudie pour repondre a la necessite de l'amplification des impulsions provenant de detecteurs nucleaires, ayant a l'esprit les problemes d'empilement et de saturation. (auteur)

  20. Wide-band fanned-out supercontinuum source covering O-, E-, S-, C-, L- and U-bands

    Science.gov (United States)

    Ahmad, H.; Latif, A. A.; Awang, N. A.; Zulkifli, M. Z.; Thambiratnam, K.; Ghani, Z. A.; Harun, S. W.

    2012-10-01

    A wide-band supercontinuum source generated by mode-locked pulses injected into a Highly Non-Linear Fiber (HNLF) is proposed and demonstrated. A 49 cm long Bismuth-Erbium Doped Fiber (Bi-EDF) pumped by two 1480 nm laser diodes acts as the active gain medium for a ring fiber laser, from which mode-locked pulses are obtained using the Non-Polarization Rotation (NPR) technique. The mode-locked pulses are then injected into a 100 m long HLNF with a dispersion of 0.15 ps/nm km at 1550 nm to generate a supercontinuum spectrum spanning from 1340 nm to more than 1680 nm with a pulse width of 0.08 ps and an average power of -17 dBm. The supercontinuum spectrum is sliced using a 24 channel Arrayed Waveguide Grating (AWG) with a channel spacing of 100 GHz to obtain a fanned-out laser output covering the O-, E-, S-, C-, L- and U-bands. The lasing wavelengths obtained have an average pulse width of 9 ps with only minor fluctuations and a mode-locked repetition rate of 40 MHz, and is sufficiently stable to be used in a variety of sensing and communication applications, most notably as cost-effective sources for Fiber-to-the-Home (FTTH) networks.

  1. Emission Channeling Studies on the Behaviour of Light Alkali Atoms in Wide-Band-Gap Semiconductors

    CERN Multimedia

    Recknagel, E; Quintel, H

    2002-01-01

    % IS342 \\\\ \\\\ A major problem in the development of electronic devices based on diamond and wide-band-gap II-VI compound semiconductors, like ZnSe, is the extreme difficulty of either n- or p-type doping. The only reports of successful n-type doping of diamond involves ion implanted Li, which was found to be an intersititial donor. Recent theoretical calculations suggest that Na, P and N dopant atoms are also good candidates for n-type doping of diamond. No experimental evidence has been obtained up to now, mainly because of the complex and partly unresolved defect situation created during ion implantation, which is necessary to incorporate potential donor atoms into diamond. \\\\ \\\\In the case of ZnSe, considerable effort has been invested in trying to fabricate pn-junctions in order to make efficient, blue-light emitting diodes. However, it has proved to be very difficult to obtain p-type ZnSe, mainly because of electrical compensation related to background donor impurities. Li and Na are believed to be ampho...

  2. Partially filled intermediate band of Cr-doped GaN films

    International Nuclear Information System (INIS)

    Sonoda, S.

    2012-01-01

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  3. Wide-band neutrino beams at 1000 GeV

    International Nuclear Information System (INIS)

    Malensek, A.; Stutte, L.

    1983-01-01

    In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train

  4. Multifunctional Antenna with Reconfigurable Ultra-Wide Band Characteristics

    Directory of Open Access Journals (Sweden)

    A. Verma

    2017-09-01

    Full Text Available In this paper a multifunctional antenna is presented which offers an ultra-wideband (UWB operation, an UWB operation with two switchable notches and reconfigurable dual-band operation for WiMAX and WLAN applications, respectively. Total seven functions/states could be achieved from a single antenna using an electronic switching. The antenna uses dual slots on the ground plane to provide a wide bandwidth, ranging from 3.1 GHz to 10.6 GHz. U-Shaped slot and C-Shaped printed strip in the ground are used to generate two notches at 3.6 GHz(WiMAX and 5.2 GHz (WLAN/ WiFi bands, respectively. Moreover, four parasitic strips are added in the feed side to make antenna functional at either3.6 GHz or 5.2 GHz or both. Total Five PIN diodes are required to obtain seven operations from the proposed antenna. Seven structures are fabricated and measured to verify the seven states and results are found in good agreement with estimated results obtained from the simulation.

  5. Ultra Wide Band RFID Neutron Tags for Nuclear Materials Monitoring

    International Nuclear Information System (INIS)

    Nekoogar, F.; Dowla, F.; Wang, T.

    2010-01-01

    Recent advancements in the ultra-wide band Radio Frequency Identification (RFID) technology and solid state pillar type neutron detectors have enabled us to move forward in combining both technologies for advanced neutron monitoring. The LLNL RFID tag is totally passive and will operate indefinitely without the need for batteries. The tag is compact, can be directly mounted on metal, and has high performance in dense and cluttered environments. The LLNL coin-sized pillar solid state neutron detector has achieved a thermal neutron detection efficiency of 20% and neutron/gamma discrimination of 1E5. These performance values are comparable to a fieldable 3 He based detector. In this paper we will discuss features about the two technologies and some potential applications for the advanced safeguarding of nuclear materials.

  6. A GPU-Based Wide-Band Radio Spectrometer

    Science.gov (United States)

    Chennamangalam, Jayanth; Scott, Simon; Jones, Glenn; Chen, Hong; Ford, John; Kepley, Amanda; Lorimer, D. R.; Nie, Jun; Prestage, Richard; Roshi, D. Anish; Wagner, Mark; Werthimer, Dan

    2014-12-01

    The graphics processing unit has become an integral part of astronomical instrumentation, enabling high-performance online data reduction and accelerated online signal processing. In this paper, we describe a wide-band reconfigurable spectrometer built using an off-the-shelf graphics processing unit card. This spectrometer, when configured as a polyphase filter bank, supports a dual-polarisation bandwidth of up to 1.1 GHz (or a single-polarisation bandwidth of up to 2.2 GHz) on the latest generation of graphics processing units. On the other hand, when configured as a direct fast Fourier transform, the spectrometer supports a dual-polarisation bandwidth of up to 1.4 GHz (or a single-polarisation bandwidth of up to 2.8 GHz).

  7. Wide-band coherent receiver development for enhanced surveillance

    International Nuclear Information System (INIS)

    Simpson, M.L.; Richards, R.K.; Hutchinson, D.P.

    1998-03-01

    Oak Ridge National Laboratory (ORNL) has been developing advanced coherent IR heterodyne receivers for plasma diagnostics in fusion reactors for over 20 years. Recent progress in wide band IR detectors and high speed electronics has significantly enhanced the measurement capabilities of coherent receivers. In addition, developments in new HgCdTe and quantum well IR photodetector (QWIP) focal plane arrays are providing the possibility of both active and passive coherent imaging. In this paper the authors discuss the implications of these new enabling technologies to the IR remote sensing community for enhanced surveillance. Coherent receivers, as opposed to direct or thermal detection, provide multiple dimensions of information about a scene or target in a single detector system. Combinations of range, velocity, temperature, and chemical species information are all available from a coherent heterodyne receiver. They present laboratory data showing measured noise equivalent power (NEP) of new QWIP detectors with heterodyne bandwidths greater than 7 GHz. For absorption measurements, a wide band coherent receiver provides the capability of looking between CO 2 lines at off-resonance peaks and thus the measurement of lines normally inaccessible with conventional heterodyne or direct detection systems. Also described are differential absorption lidar (DIAL) and Doppler laboratory measurements using an 8 x 8 HgCdTe focal plane array demonstrating the snapshot capability of coherent receiver detector arrays for enhanced chemical plume and moving hardbody capture. Finally they discuss a variety of coherent receiver configurations that can suppress (or enhance) sensitivity of present active remote sensing systems to speckle, glint, and other measurement anomalies

  8. Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; Yoshino, Katsumi

    2004-01-01

    We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

  9. Design studies of the Ku-band, wide-band Gyro-TWT amplifier

    Science.gov (United States)

    Jung, Sang Wook; Lee, Han Seul; Jang, Kwong Ho; Choi, Jin Joo; Hong, Yong Jun; Shin, Jin Woo; So, Jun Ho; Won, Jong Hyo

    2014-02-01

    This paper reports a Ku-band, wide band Gyrotron-Traveling-wave-tube(Gyro-TWT) that is currently being developed at Kwangwoon University. The Gyro-TWT has a two stage linear tapered interaction circuit to obtain a wide operating bandwidth. The linearly-tapered interaction circuit and nonlinearly-tapered magnetic field gives the Gyro-TWT a wide operating bandwidth. The Gyro-TWT bandwidth is 23%. The 2d-Particle-in-cell(PIC) and MAGIC2d code simulation results are 17.3 dB and 24.34 kW, respectively for the maximum saturated output power. A double anode MIG was simulated with E-Gun code. The results were 0.7 for the transvers to the axial beam velocity ratio (=alpha) and a 2.3% axial velocity spread at 50 kV and 4 A. A magnetic field profile simulation was performed by using the Poisson code to obtain the grazing magnetic field of the entire interaction circuit with Poisson code.

  10. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  11. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

    Science.gov (United States)

    Guo, Yuzheng; Robertson, John

    2017-09-01

    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  12. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  13. Band gap narrowing and fluorescence properties of nickel doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Ahmed, Arham S.; Shafeeq, M. Muhamed; Singla, M.L.; Tabassum, Sartaj; Naqvi, Alim H.; Azam, Ameer

    2011-01-01

    Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration ( 2 -SnO 2-x alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

  14. Band gap narrowing and fluorescence properties of nickel doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Arham S; Shafeeq, M Muhamed [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Singla, M L [Central Scientific Instruments Organization (CSIO), Council of Scientific and Industrial Research (CSIR), Materials Research and Bio-Nanotechnology Division, Sector - 30/C, Chandigarh-160030 (India); Tabassum, Sartaj [Department of Chemistry, Aligarh Muslim University, Aligarh-202002 (India); Naqvi, Alim H [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Azam, Ameer [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India)

    2011-01-15

    Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration (<5%) can be assigned to SnO{sub 2}-SnO{sub 2-x} alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

  15. Wide Band and Wide Azimuth Beam Effect on High-resolution Synthetic Aperture Radar Radiometric Calibration

    Directory of Open Access Journals (Sweden)

    Hong Jun

    2015-06-01

    Full Text Available Passive corner reflectors and active transponders are often used as man-made reference targets in Synthetic Aperture Radar (SAR radiometric calibration, With the emergence of new radar systems and the increasing demand for greater accuracy, wide-band and wide-beam radars challenge the hypothesis that the Radar Cross Section (RCS of reference targets is constant. In this study, the FEKO electromagnetic simulation software is used to obtain the change curve of the target RCS as a function of frequency and aspect angle while incorporating high-resolution point-target SAR simulation, and quantitatively analyzing the effect of the modulation effect on SAR images. The simulation results suggest that the abovementioned factors affect the SAR calibration by more than 0.2 dB within a fractional bandwidth greater than 10% or azimuth beam width of more than 20°, which must be corrected in the data processing.

  16. Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

    KAUST Repository

    Zhou, Hang

    2014-03-27

    We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

  17. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

    International Nuclear Information System (INIS)

    Bierwagen, Oliver

    2015-01-01

    The present review takes a semiconductor physics perspective to summarize the state-of-the art of In 2 O 3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In 2 O 3 will be critically discussed. With this overview most if not all ingredients for the use of In 2 O 3 as semiconductor material in novel or improved conventional devices will be given. (invited review)

  18. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  19. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  20. Angle-resolved photoemission spectroscopy of band tails in lightly doped cuprates

    OpenAIRE

    Alexandrov, A. S.; Reynolds, K.

    2007-01-01

    We amend ab initio strongly-correlated band structures by taking into account the band-tailing phenomenon in doped charge-transfer Mott-Hubbard insulators. We show that the photoemission from band tails accounts for sharp "quasi-particle" peaks, rapid loss of their intensities in some directions of the Brillouin zone ("Fermi-arcs") and high-energy "waterfall" anomalies as a consequence of matrix-element effects of disorder-localised states in the charge-transfer gap of doped cuprates.

  1. Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material

    International Nuclear Information System (INIS)

    Zhang, Jiajia; He, Haiyan; Pan, Bicai

    2015-01-01

    An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe 2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe 2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe 2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe 2 is a promising two-dimensional photovoltaic material. (paper)

  2. Band-gap narrowing of TiO2 films induced by N-doping

    International Nuclear Information System (INIS)

    Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y.

    2006-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 o C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from X-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at 1.18 and 2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N-doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  3. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    Science.gov (United States)

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  4. Head and hand detuning effect study of narrow-band against wide-band mobile phone antennas

    DEFF Research Database (Denmark)

    Bahramzy, Pevand; Pedersen, Gert Frølund

    2014-01-01

    Wide-band (WB) and narrow-band (NB) antennas in terms of performance are compared, when interacting with the user’s right head and hand (RHH). The investigations are done through experimental measurements, using standardised head phantom and hand. It is shown that WB antennas detune more than NB ...

  5. Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

    Science.gov (United States)

    Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

    2013-10-14

    The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

  6. Modeling of Wide-Band-Gap Semiconductor Alloys

    National Research Council Canada - National Science Library

    Lambrecht, W

    1998-01-01

    .... The band structure and the total energy properties of LiGaO2 were studied in relation to its possible role as a substrate for GaN growth and as a model system for cation ordering on wurtzite based lattices...

  7. Impact ionisation rate calculations in wide band gap semiconductors

    International Nuclear Information System (INIS)

    Harrison, D.

    1998-09-01

    Calculations of band-to-band impact ionisation rates performed in the semi-classical Fermi's Golden Rule approximation are presented here for the semiconductors GaAs, In 0.53 Ga 0.47 As and Si 0.5 Ge 0.5 at 300K. The crystal band structure is calculated using the empirical pseudopotential method. To increase the speed with which band structure data at arbitrary k-vectors can be obtained, an interpolation scheme has been developed. Energies are quadratically interpolated on adapted meshes designed to ensure accuracy is uniform throughout the Brillouin zone, and pseudowavefunctions are quadratically interpolated on a regular mesh. Matrix elements are calculated from the pseudowavefunctions, and include the terms commonly neglected in calculations for narrow band gap materials and an isotropic approximation to the full wavevector and frequency dependent dielectric function. The numerical integration of the rate over all distinct energy and wavevector conserving transitions is performed using two different algorithms. Results from each are compared and found to be in good agreement, indicating that the algorithms are reliable. The rates for electrons and holes in each material are calculated as functions of the k-vector of the impacting carriers, and found to be highly anisotropic. Average rates for impacting carriers at a given energy are calculated and fitted to Keldysh-type expressions with higher than quadratic dependence of the rate on energy above threshold being obtained in all cases. The average rates calculated here are compared to results obtained by other workers, with reasonable agreement being obtained for GaAs, and poorer agreement obtained for InGaAs and SiGe. Possible reasons for the disagreement are investigated. The impact ionisation thresholds are examined and k-space and energy distributions of generated carriers are determined. The role of threshold anisotropy, variation in the matrix elements and the shape of the bands in determining

  8. Information retrieval from wide-band meteorological data - An example

    Science.gov (United States)

    Adelfang, S. I.; Smith, O. E.

    1983-01-01

    The methods proposed by Smith and Adelfang (1981) and Smith et al. (1982) are used to calculate probabilities over rectangles and sectors of the gust magnitude-gust length plane; probabilities over the same regions are also calculated from the observed distributions and a comparison is also presented to demonstrate the accuracy of the statistical model. These and other statistical results are calculated from samples of Jimsphere wind profiles at Cape Canaveral. The results are presented for a variety of wavelength bands, altitudes, and seasons. It is shown that wind perturbations observed in Jimsphere wind profiles in various wavelength bands can be analyzed by using digital filters. The relationship between gust magnitude and gust length is modeled with the bivariate gamma distribution. It is pointed out that application of the model to calculate probabilities over specific areas of the gust magnitude-gust length plane can be useful in aerospace design.

  9. Doping Mechanisms in Wide Bandgap Group III Nitrides

    National Research Council Canada - National Science Library

    Wessels, Bruce

    2002-01-01

    .... The main objective was to determine the factors, which limit p-type conductivity in GaN and its alloys and to develop doping techniques to increase the hole concentrations to greater than 10(exp 19)/cu cm...

  10. Kinetics of singlet and triplet excitons in a wide-band-gap copolymer

    NARCIS (Netherlands)

    Loi, MA; Gadermaier, C; List, EJW; Leising, G; Graupner, W; Bongiovanni, G; Mura, A; Pireaux, JJ; Kaeriyama, K

    2000-01-01

    Transient and photomodulation spectroscopy is used in order to determine decay times and densities of both emitting and absorbing species in the wide band-gap semiconductor poly-2,5-diheptyl-1,4-phenylene-alt-2, S-thienylene (PDHPT). The wide band gap of this material is a consequence of the large

  11. A Design of Wide Band and Wide Beam Cavity-Backed Slot Antenna Array with Slant Polarization

    Directory of Open Access Journals (Sweden)

    Huiying Qi

    2016-01-01

    Full Text Available Design of antenna array under the limitation of restricted size is a challenging problem. Cavity-backed slot antenna is widely used because of its advantages of small size, wide band, and wide beam. In this paper, a design of wide band and wide beam cavity-backed slot antenna array with the slant polarization is proposed. To obtain wide band and wide beam with limited size, the inverted microstrip-fed cavity-backed slot antenna (IMF-CBSA is adopted as the element of 1 × 4 antenna array. The slant polarized antennas and their feeding networks are adopted because of their simple structures. The performance of the proposed antenna array is verified by the simulations and experiments. The measured VSWR < 2 bandwidth is 55% at the center frequency 21.8 GHz, and the gain is larger than 12.2 dB. Experimental results demonstrate that the proposed design achieves wide band and beam with the size of 68 mm × 56 mm × 14.5 mm.

  12. Wide band gap p-type windows by CBD and SILAR methods

    International Nuclear Information System (INIS)

    Sankapal, B.R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M.Ch.

    2004-01-01

    Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 deg. C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na 2 S 2 O 3 . The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS 2 (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed

  13. Wide band gap p-type windows by CBD and SILAR methods

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M.Ch

    2004-03-22

    Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 deg. C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na{sub 2}S{sub 2}O{sub 3}. The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS{sub 2} (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed.

  14. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review

    International Nuclear Information System (INIS)

    Zhang, S.B.

    2002-01-01

    This paper reviews the recent developments in first-principles total energy studies of the phenomenological equilibrium 'doping limit rule' that governs the maximum electrical conductivity of semiconductors via extrinsic or intrinsic doping. The rule relates the maximum equilibrium carrier concentrations (electrons or holes) of a wide range of materials to their respective band alignments. The microscopic origin of the mysterious 'doping limit rule' is the spontaneous formation of intrinsic defects: e.g., in n-type semiconductors, the formation of cation vacancies. Recent developments in overcoming the equilibrium doping limits are also discussed: it appears that a common route to significantly increase carrier concentrations is to expand the physically accessible range of the dopant atomic chemical potential by non-equilibrium doping processes, which not only suppresses the formation of the intrinsic defects but also lowers the formation energy of the impurities, thereby significantly increasing their solubility. (author)

  15. O2 atmospheric band measurements with WINDII: Performance of a narrow band filter/wide angle Michelson combination in space

    International Nuclear Information System (INIS)

    Ward, W.E.; Hersom, C.H.; Tai, C.C.; Gault, W.A.; Shepherd, G.G.; Solheim, B.H.

    1994-01-01

    Among the emissions viewed by the Wind Imaging Interferometer (WINDII) on the Upper Atmosphere Research Satellite (UARS) are selected lines in the (0-0) transition of the O2 atmospheric band. These lines are viewed simultaneously using a narrow band filter/wide-angle Michelson interferometer combination. The narrow band filter is used to separate the lines on the CCD (spectral-spatial scanning) and the Michelson used to modulate the emissions so that winds and rotational temperatures may be measured from the Doppler shifts and relative intensities of the lines. In this report this technique will be outlined and the on-orbit behavior since launch summarized

  16. SHARPENDING OF THE VNIR AND SWIR BANDS OF THE WIDE BAND SPECTRAL IMAGER ONBOARD TIANGONG-II IMAGERY USING THE SELECTED BANDS

    Directory of Open Access Journals (Sweden)

    Q. Liu

    2018-04-01

    Full Text Available The Tiangong-II space lab was launched at the Jiuquan Satellite Launch Center of China on September 15, 2016. The Wide Band Spectral Imager (WBSI onboard the Tiangong-II has 14 visible and near-infrared (VNIR spectral bands covering the range from 403–990 nm and two shortwave infrared (SWIR bands covering the range from 1230–1250 nm and 1628–1652 nm respectively. In this paper the selected bands are proposed which aims at considering the closest spectral similarities between the VNIR with 100 m spatial resolution and SWIR bands with 200 m spatial resolution. The evaluation of Gram-Schmidt transform (GS sharpening techniques embedded in ENVI software is presented based on four types of the different low resolution pan band. The experimental results indicated that the VNIR band with higher CC value with the raw SWIR Band was selected, more texture information was injected the corresponding sharpened SWIR band image, and at that time another sharpened SWIR band image preserve the similar spectral and texture characteristics to the raw SWIR band image.

  17. Doping and band gap control at poly(vinylidene fluoride)/graphene interface

    Science.gov (United States)

    Cai, Jia; Wang, Jian-Lu; Gao, Heng; Tian, Bobo; Gong, Shi-Jing; Duan, Chun-Gang; Chu, Jun-Hao

    2018-05-01

    Using the density-functional first-principles calculations, we investigate the electronic structures of poly(vinylidene fluoride) PVDF/graphene composite systems. The n- and p-doping of graphene can be flexibly switched by reversing the ferroelectric polarization of PVDF, without scarifying the intrinsic π-electron band dispersions of graphene that are usually undermined by chemical doping. The doping degree is also dependent on the thickness of PVDF layers, which will get saturated when PVDF is thick enough. In PVDF/bilayer graphene (BLG) heterostructure, the doping degree directly determines the local energy gap of the charged BLG. The sandwich structure of PVDF/BLG/PVDF can further enhance the local energy gap as well as keep the electric neutrality of BLG, which will be of great application potentials in graphene-based nanoelectronics.

  18. A U-Shaped Slot UWB Antenna with Flexible and Wide Tunable Dual Notch Band

    Directory of Open Access Journals (Sweden)

    Zhang Zhongmin

    2016-01-01

    Full Text Available A coplanar waveguide (CPW fed ultra-wideband (UWB antenna with flexible and wide tunable dual bandnotched characteristics is proposed in this paper. The dual band-notched function is achieved by using an U-shaped slot inserted into the ellipse radiation patch and by using an elliptic parasitic slit placed near the ground plane. The wide tunable band-notched characteristic is implemented by adjusting the length of U-shaped slot and by adjusting the length of ellipse parasitic slit. The design aims to achieve wide reconfigurable band-notched features on the UWB antenna. The simulated results indicate that the proposed antenna has a wide bandwidth (VSWR under 2 from 2.9GHz to 12.6GHz with fractional bandwidth of 125%, and has a wide tunable notch band center frequency from 4.5GHz to 12.4GHz.

  19. THz Imaging by a Wide-band Compact FEL

    CERN Document Server

    Uk Jeong Young; Cheol Lee Byung; Hee-Park, S

    2004-01-01

    We have developed a laboratory-scale users facility with a compact THz FEL. The FEL operates in the wide wavelength range of 100–1200 μm, which corresponds to 0.3-3 THz. THz radiation from the FEL shows well collimated Gaussian spatial distribution and narrow spectral width of 0.3 μm, which is Fourier transform limited by the estimated pulse duration of 20 ps. The main application of the FEL is THz imaging for bio-medical researches. We are developing THz imaging techniques by 2-D scanning, single pulse capturing with the electro-optic method, and 3-D holography. High power, coherent, and pulsed feature of the FEL radiation is expected to show much better performance in advanced THz imaging of 3-D tomography by comparing with incoherent and weak THz sources. By controlling the optical delay between reference beam and scattered light from an object, we can get its 3-D tomography by the holograms. The coherent and pulse length of the FEL beam is measured to be 3-6 mm. In this paper we will show a...

  20. Intermediate band mobility in heavily titanium-doped silicon layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2009-09-15

    The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

  1. [Auditory training with wide-band white noise: effects on the recruitment (III)].

    Science.gov (United States)

    Domínguez Ugidos, L J; Rodríguez Morejón, C; Vallés Varela, H; Iparraguirre Bolinaga, V; Knaster del Olmo, J

    2001-05-01

    The auditory training with wide-band white noise is a methodology for the qualitative recovery of the hearing loss in people suffering from sensorineural hearing loss. It is based on the application of a wide-band white modified noise. In a prospective study, we have assessed the modifications of the recruitment coefficient in a sample of 48 patients who have followed a program of 15 auditory training with wide-band white noise sessions. The average improvement of the recruitment coefficient expressed in percentage is a 7.7498%, which comes up to 23.5249% in the case of a binaural recruitment coefficient. From our results, it can be deduced that the auditory training with wide-band white noise reduces the recruitment. That is to say, the decrease of the recruitment in high intensities both binaurally and in all ears.

  2. Continuously tunable S and C+L bands ultra wideband erbium-doped fiber ring laser

    International Nuclear Information System (INIS)

    Wang, Q; Yu, Q X

    2009-01-01

    This paper presents an ultra wideband tunable silica-based erbium doped fiber ring laser (EDFRL) that can be continuously tuned in S and C+L bands from 1475 to 1619 nm. It is the first time that a fiber ring laser's tuning range reaches 144 nm using a standard silica-based C-band erbium-doped fiber as gain media. In the laser configuration two isolators are used in the fiber loop for suppressing the ASE in C-band and elevating the lasing gain in S-band. As a result the available lasing wavelength is extended toward the shorter wavelength of the gain bandwidth. The optimized erbium-doped fiber length, output coupling ratio and pumping laser power have been obtained through experimental study. This ring fiber laser has simple configuration, low threshold, flat laser spectral distribution and high signal-to-ASE-noise ratio. The laser will have many potential applications in fiber sensor wavelength interrogation, high-resolution spectroscopy and fiber optic communications

  3. Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

    Science.gov (United States)

    Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

    2017-07-01

    Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).

  4. Nanoscale wide-band semiconductors for photocatalytic remediation of aquatic pollution.

    Science.gov (United States)

    Sarkar, Biplab; Daware, Akshay Vishnu; Gupta, Priya; Krishnani, Kishore Kumar; Baruah, Sunandan; Bhattacharjee, Surajit

    2017-11-01

    Water pollution is a serious challenge to the public health. Among different forms of aquatic pollutants, chemical and biological agents create paramount threat to water quality when the safety standards are surpassed. There are many conventional remediatory strategies that are practiced such as resin-based exchanger and activated charcoal/carbon andreverse osmosis. Newer technologies using plants, microorganisms, genetic engineering, and enzyme-based approaches are also proposed for aquatic pollution management. However, the conventional technologies have shown impending inadequacies. On the other hand, new bio-based techniques have failed to exhibit reproducibility, wide specificity, and fidelity in field conditions. Hence, to solve these shortcomings, nanotechnology ushered a ray of hope by applying nanoscale zinc oxide (ZnO), titanium dioxide (TiO 2 ), and tungsten oxide (WO 3 ) particles for the remediation of water pollution. These nanophotocatalysts are active, cost-effective, quicker in action, and can be implemented at a larger scale. These nanoparticles are climate-independent, assist in complete mineralization of pollutants, and can act non-specifically against chemically and biologically based aquatic pollutants. Photocatalysis for environmental remediation depends on the availability of solar light. The mechanism of photocatalysis involves the formation of electron-hole pairs upon light irradiations at intensities higher than their band gap energies. In the present review, different methods of synthesis of nanoscale ZnO, TiO 2 , and WO 3 as well as their structural characterizations have been discussed. Photodegradation of organic pollutants through mentioned nanoparticles has been reviewed with recent advancements. Enhancing the efficacy of photocatalysis through doping of TiO 2 and ZnO nanoparticles with non-metals, metals, and metal ions has also been documented in this report.

  5. Effectiveness of dye sensitised solar cell under low light condition using wide band dye

    Energy Technology Data Exchange (ETDEWEB)

    Sahmer, Ahmad Zahrin, E-mail: ahmadzsahmer@gmail.com; Mohamed, Norani Muti, E-mail: noranimuti-mohamed@petronas.com.my; Zaine, Siti Nur Azella, E-mail: ct.azella@gmail.com [Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2015-07-22

    Dye sensistised solar cell (DSC) based on nanocrystalline TiO{sub 2} has the potential to be used in indoor consumer power application. In realizing this, the DSC must be optimized to generate power under low lighting condition and under wider visible light range. The use of wide band dye N749 which has a wider spectrum sensitivity increases the photon conversion to electron between the visible light spectrums of 390nm to 700nm. This paper reports the study on the effectiveness of the dye solar cell with N749 dye under low light condition in generating usable power which can be used for indoor consumer application. The DSC was fabricated using fluorine doped tin oxide (FTO) glass with screen printing method and the deposited TiO{sub 2} film was sintered at 500°C. The TiO{sub 2} coated FTO glass was then soaked in the N749 dye, assembled into test cell, and tested under the standard test condition at irradiance of 1000 W/m{sup 2} with AM1.5 solar soaker. The use of the 43T mesh for the dual pass screen printing TiO{sub 2} paste gives a uniform TiO{sub 2} film layer of 16 µm. The low light condition was simulated using 1/3 filtered irradiance with the solar soaker. The fabricated DSC test cell with the N749 dye was found to have a higher efficiency of 6.491% under low light condition compared to the N719 dye. Under the standard test condition at 1 sun the N749 test cell efficiency is 4.55%. The increases in efficiency is attributed to the wider spectral capture of photon of the DSC with N749 dye. Furthermore, the use of N749 dye is more effective under low light condition as the V{sub OC} decrement is less significant compared to the latter.

  6. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

    Science.gov (United States)

    Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

    2018-04-18

    The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  7. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

    Science.gov (United States)

    Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

    2018-04-01

    The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  8. DATA QUALITY EVALUATION AND APPLICATION POTENTIAL ANALYSIS OF TIANGONG-2 WIDE-BAND IMAGING SPECTROMETER

    Directory of Open Access Journals (Sweden)

    B. Qin

    2018-04-01

    Full Text Available Tiangong-2 is the first space laboratory in China, which launched in September 15, 2016. Wide-band Imaging Spectrometer is a medium resolution multispectral imager on Tiangong-2. In this paper, the authors introduced the indexes and parameters of Wideband Imaging Spectrometer, and made an objective evaluation about the data quality of Wide-band Imaging Spectrometer in radiation quality, image sharpness and information content, and compared the data quality evaluation results with that of Landsat-8. Although the data quality of Wide-band Imager Spectrometer has a certain disparity with Landsat-8 OLI data in terms of signal to noise ratio, clarity and entropy. Compared with OLI, Wide-band Imager Spectrometer has more bands, narrower bandwidth and wider swath, which make it a useful remote sensing data source in classification and identification of large and medium scale ground objects. In the future, Wide-band Imaging Spectrometer data will be widely applied in land cover classification, ecological environment assessment, marine and coastal zone monitoring, crop identification and classification, and other related areas.

  9. Data Quality Evaluation and Application Potential Analysis of TIANGONG-2 Wide-Band Imaging Spectrometer

    Science.gov (United States)

    Qin, B.; Li, L.; Li, S.

    2018-04-01

    Tiangong-2 is the first space laboratory in China, which launched in September 15, 2016. Wide-band Imaging Spectrometer is a medium resolution multispectral imager on Tiangong-2. In this paper, the authors introduced the indexes and parameters of Wideband Imaging Spectrometer, and made an objective evaluation about the data quality of Wide-band Imaging Spectrometer in radiation quality, image sharpness and information content, and compared the data quality evaluation results with that of Landsat-8. Although the data quality of Wide-band Imager Spectrometer has a certain disparity with Landsat-8 OLI data in terms of signal to noise ratio, clarity and entropy. Compared with OLI, Wide-band Imager Spectrometer has more bands, narrower bandwidth and wider swath, which make it a useful remote sensing data source in classification and identification of large and medium scale ground objects. In the future, Wide-band Imaging Spectrometer data will be widely applied in land cover classification, ecological environment assessment, marine and coastal zone monitoring, crop identification and classification, and other related areas.

  10. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

    2001-01-01

    The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

  11. Ab-initio valence band spectra of Al, In doped ZnO

    International Nuclear Information System (INIS)

    Palacios, P.; Sanchez, K.; Wahnon, P.

    2009-01-01

    We present the structural and electronic characterization of n-doped (Aluminium or Indium) ZnO and the effect of the doping on the calculated photoelectron spectroscopy (PES) spectra. The fully-relaxed calculations have been made using the density functional theory, including a Hubbard correlation term that increases the Zn-3d states binding energy, and which matches the experimental values. The effect of Oxygen vacancies is also included in our study. Our results show that the new Al or In-donor levels appearing in the conduction band hybridize with the Oxygen-2p states and help decrease the resistivity of these doped systems as was found experimentally. The calculated PES spectra show a small enhancement in the intensity close to the chemical potential as a result of these new Al or In levels

  12. Study of sub band gap absorption of Sn doped CdSe thin films

    International Nuclear Information System (INIS)

    Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

    2014-01-01

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

  13. Study of sub band gap absorption of Sn doped CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

    2014-04-24

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

  14. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  15. Sn-doped polyhedral In2O3 particles: Synthesis, characterization, and origins of luminous emission in wide visible range

    International Nuclear Information System (INIS)

    Zhu Yunqing; Chen Yiqing

    2012-01-01

    Sn-doped octahedronal and tetrakaidecahedronal In 2 O 3 particles were successfully synthesized by simple thermal evaporation of indium grains using SnO as dopant. Structural characterization results demonstrated that the Sn-doped tetrakaidecahedronal In 2 O 3 particle had additional six {001} crystal surfaces compared with the octahedronal one. The luminous properties of both samples were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. A broad visible luminous emission around 570 nm was observed. Studies revealed that the emission consisted of three peaks of 511 nm, 564 nm, and 622 nm, which were attributed to radioactive recombination centers such as single ionized oxygen vacancy, indium interstitial, and antisite oxygen, respectively. We believe that the Sn donor level plays an important role in the visible luminous emission. - Graphical abstract: With more oxygen vacancies and tin doping. ITO particles can exhibit a better CL performance. Sn donor level near the conduction band edge plays an important role in luminous emission in wide visible range. Highlights: ► Polyhedral ITO particles synthesized by thermal evaporation using SnO as dopant. ► Broad visible luminous emission around 570 nm. ► Sn donor level plays an important role in the visible emission. ► ITO particles with more oxygen vacancies have better CL performance in visible range.

  16. An open-structure sound insulator against low-frequency and wide-band acoustic waves

    Science.gov (United States)

    Chen, Zhe; Fan, Li; Zhang, Shu-yi; Zhang, Hui; Li, Xiao-juan; Ding, Jin

    2015-10-01

    To block sound, i.e., the vibration of air, most insulators are based on sealed structures and prevent the flow of the air. In this research, an acoustic metamaterial adopting side structures, loops, and labyrinths, arranged along a main tube, is presented. By combining the accurately designed side structures, an extremely wide forbidden band with a low cut-off frequency of 80 Hz is produced, which demonstrates a powerful low-frequency and wide-band sound insulation ability. Moreover, by virtue of the bypass arrangement, the metamaterial is based on an open structure, and thus air flow is allowed while acoustic waves can be insulated.

  17. Effect of thickness on microwave absorptive behavior of La-Na doped Co-Zr barium hexaferrites in 18.0–26.5 GHz band

    Energy Technology Data Exchange (ETDEWEB)

    Arora, Amit [D.A.V. Institute of Engineering and Technology, Jalandhar (India); Narang, Sukhleen Bindra, E-mail: sukhleen2@yahoo.com [Department of Electronics Technology, Guru Nanak Dev University, Amritsar (India); Pubby, Kunal [Department of Electronics Technology, Guru Nanak Dev University, Amritsar (India)

    2017-02-01

    In this research, the microwave properties of Lanthanum-Sodium doped Cobalt-Zirconium barium hexaferrites, intended as microwave absorbers, are analyzed on Vector Network Analyzer in K-band. The results indicate that the doping has resulted in lowering of real permittivity and enhancement of dielectric losses. Real permeability has shown increase while magnetic losses have shown decrease in value with doping. All these four properties have shown very small variation with frequency in the scanned frequency range which indicates the relaxation type of behavior. Microwave absorption characteristics of these compositions are analyzed with change in sample thickness. The results demonstrate that the matching frequency of the microwave absorber shifts towards lower side of frequency band with increase in thickness. The complete analysis of the prepared microwave absorbers shows a striking achievement with very low reflection loss and wide absorption bandwidth for all the six compositions in 18–26.5 GHz frequency band. - Highlights: • Electromagnetic Characterization of M-hexaferrites in K-band (18–26.5 GHz) • Variation of absorption properties with thickness of sample. • Satisfaction of quarter-wavelength condition for absorption properties • Results of double-layer absorbers (not reports till day by anyone).

  18. Wide field-of-view dual-band multispectral muzzle flash detection

    Science.gov (United States)

    Montoya, J.; Melchor, J.; Spiliotis, P.; Taplin, L.

    2013-06-01

    Sensor technologies are undergoing revolutionary advances, as seen in the rapid growth of multispectral methodologies. Increases in spatial, spectral, and temporal resolution, and in breadth of spectral coverage, render feasible sensors that function with unprecedented performance. A system was developed that addresses many of the key hardware requirements for a practical dual-band multispectral acquisition system, including wide field of view and spectral/temporal shift between dual bands. The system was designed using a novel dichroic beam splitter and dual band-pass filter configuration that creates two side-by-side images of a scene on a single sensor. A high-speed CMOS sensor was used to simultaneously capture data from the entire scene in both spectral bands using a short focal-length lens that provided a wide field-of-view. The beam-splitter components were arranged such that the two images were maintained in optical alignment and real-time intra-band processing could be carried out using only simple arithmetic on the image halves. An experiment related to limitations of the system to address multispectral detection requirements was performed. This characterized the system's low spectral variation across its wide field of view. This paper provides lessons learned on the general limitation of key hardware components required for multispectral muzzle flash detection, using the system as a hardware example combined with simulated multispectral muzzle flash and background signatures.

  19. Fully inkjet printed wide band cantor fractal antenna for RF energy harvesting application

    KAUST Repository

    Bakytbekov, Azamat

    2017-06-07

    Energy harvesting from ambient RF signals is feasible, particularly from the GSM bands such as 900MHz, 1800MHz and the 3G band at 2.1GHz. This requires a wideband receive antenna which can cover all these bands with decent gain performance and an omnidirectional radiation pattern. In this work, a novel Cantor fractal antenna has been designed which fulfills the above mentioned performance requirements. Antenna has been realized through a combination of 3D inkjet printing of plastic substrate and 2D inkjet printing of metallic nanoparticles based ink. The stable impedance and radiation performance of the antenna over a bandwidth of 0.8GHz to 2.2GHz (93 %) shows the feasibility of its employment in wide band energy harvesting applications.

  20. A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides.

    Science.gov (United States)

    Linderälv, Christopher; Lindman, Anders; Erhart, Paul

    2018-01-04

    Wide band gap oxides are versatile materials with numerous applications in research and technology. Many properties of these materials are intimately related to defects, with the most important defect being the oxygen vacancy. Here, using electronic structure calculations, we show that the charge transition level (CTL) and eigenstates associated with oxygen vacancies, which to a large extent determine their electronic properties, are confined to a rather narrow energy range, even while band gap and the electronic structure of the conduction band vary substantially. Vacancies are classified according to their character (deep versus shallow), which shows that the alignment of electronic eigenenergies and CTL can be understood in terms of the transition between cavity-like localized levels in the large band gap limit and strong coupling between conduction band and vacancy states for small to medium band gaps. We consider both conventional and hybrid functionals and demonstrate that the former yields results in very good agreement with the latter provided that band edge alignment is taken into account.

  1. Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

    NARCIS (Netherlands)

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In

  2. Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Hvam, Jørn Märcher

    2005-01-01

    We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design......-QW laser. There is good agreement between the measured results and existing theory....

  3. First-principles study on band structures and electrical transports of doped-SnTe

    Directory of Open Access Journals (Sweden)

    Xiao Dong

    2016-06-01

    Full Text Available Tin telluride is a thermoelectric material that enables the conversion of thermal energy to electricity. SnTe demonstrates a great potential for large-scale applications due to its lead-free nature and the similar crystal structure to PbTe. In this paper, the effect of dopants (i.e., Mg, Ca, Sr, Ba, Eu, Yb, Zn, Cd, Hg, and In on the band structures and electrical transport properties of SnTe was investigated based on the first-principles density functional theory including spin–orbit coupling. The results show that Zn and Cd have a dominant effect of band convergence, leading to power factor enhancement. Indium induces obvious resonant states, while Hg-doped SnTe exhibits a different behavior with defect states locating slightly above the Fermi level.

  4. Proposal of a wide-band mirror polarizer of slow neutrons at a pulsed neutron source

    International Nuclear Information System (INIS)

    Nikitenko, Yu.V.; Ostanevich, Yu.M.

    1992-01-01

    The new type wide-band mirror-based neutron polarizer to be operated at a pulsed neutron source is suggested. The idea is to use a movable polarizing mirror system, which, be the incoming beam monochromatized by the time-of-flight, would allow one to tune glancing angles in time so, that the total reflection condition is always fulfilled only for one of the two neutron spin eigenstates. Estimates show, that with the pulsed reactor IBR-2 such polarizer allows one to build a small-angle neutron scattering instrument capable to effectively use the wave-length band from 2 to 15 A. 9 refs.; 1 fig

  5. Wide applicability of high-Tc pairing originating from coexisting wide and incipient narrow bands in quasi-one-dimensional systems

    Science.gov (United States)

    Matsumoto, Karin; Ogura, Daisuke; Kuroki, Kazuhiko

    2018-01-01

    We study superconductivity in the Hubbard model on various quasi-one-dimensional lattices with coexisting wide and narrow bands originating from multiple sites within a unit cell, where each site corresponds to a single orbital. The systems studied are the two-leg and three-leg ladders, the diamond chain, and the crisscross ladder. These one-dimensional lattices are weakly coupled to form two-dimensional (quasi-one-dimensional) ones, and the fluctuation exchange approximation is adopted to study spin-fluctuation-mediated superconductivity. When one of the bands is perfectly flat and the Fermi level intersecting the wide band is placed in the vicinity of, but not within, the flat band, superconductivity arising from the interband scattering processes is found to be strongly enhanced owing to the combination of the light electron mass of the wide band and the strong pairing interaction due to the large density of states of the flat band. Even when the narrow band has finite bandwidth, the pairing mechanism still works since the edge of the narrow band, due to its large density of states, plays the role of the flat band. The results indicate the wide applicability of the high-Tc pairing mechanism due to coexisting wide and "incipient" narrow bands in quasi-one-dimensional systems.

  6. Atmospheric and Fog Effects on Ultra-Wide Band Radar Operating at Extremely High Frequencies.

    Science.gov (United States)

    Balal, Nezah; Pinhasi, Gad A; Pinhasi, Yosef

    2016-05-23

    The wide band at extremely high frequencies (EHF) above 30 GHz is applicable for high resolution directive radars, resolving the lack of free frequency bands within the lower part of the electromagnetic spectrum. Utilization of ultra-wideband signals in this EHF band is of interest, since it covers a relatively large spectrum, which is free of users, resulting in better resolution in both the longitudinal and transverse dimensions. Noting that frequencies in the millimeter band are subjected to high atmospheric attenuation and dispersion effects, a study of the degradation in the accuracy and resolution is presented. The fact that solid-state millimeter and sub-millimeter radiation sources are producing low power, the method of continuous-wave wideband frequency modulation becomes the natural technique for remote sensing and detection. Millimeter wave radars are used as complementary sensors for the detection of small radar cross-section objects under bad weather conditions, when small objects cannot be seen by optical cameras and infrared detectors. Theoretical analysis for the propagation of a wide "chirped" Frequency-Modulated Continuous-Wave (FMCW) radar signal in a dielectric medium is presented. It is shown that the frequency-dependent (complex) refractivity of the atmospheric medium causes distortions in the phase of the reflected signal, introducing noticeable errors in the longitudinal distance estimations, and at some frequencies may also degrade the resolution.

  7. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  8. Based on graphene tunable dual-band terahertz metamaterial absorber with wide-angle

    Science.gov (United States)

    Huang, Mulin; Cheng, Yongzhi; Cheng, Zhengze; Chen, Haoran; Mao, Xuesong; Gong, Rongzhou

    2018-05-01

    We present a wide-angle tunable dual-band terahertz (THz) metamaterial absorber (MMA) based on square graphene patch (SGP). This MMA is a simple periodic array, consisting of a dielectric substrate sandwiched with the SGP and a continuous metallic film. The designed MMA can achieve dual-band absorption by exciting fundamental and second higher-order resonance modes on SGP. The numerical simulations indicate that the absorption spectrum of the designed MMA is tuned from 0.85 THz to 1.01 THz, and from 2.84 THz to 3.37 THz when the chemical potential of the SGP is increasing from 0.4eV to 0.8eV. Moreover, it operates well in a wide-angle of the incident waves. The presented THz MMA based on the SGP could find some potential applications in optoelectronic related devices, such as sensor, emitter and wavelength selective radiators.

  9. Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.

    2017-07-15

    Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very

  10. Experimental investigation of 1 GW repeatable ultra-wide band pulse radiating source

    International Nuclear Information System (INIS)

    Meng Fanbao; Ma Hongge; Zhou Chuanming; Yang Zhoubing; Lu Wei; Ju Bingquan; Yu Huilong

    2001-01-01

    The single cycle pulse of 1.6 GW peak power with 20 Hz repetition-rate was generated. It radiated a peak power of more than 500 MW with a coaxial biconical antenna. The technological problems of the insulation and energy loss during generating and radiating high peak power ultra-wide band (UWB) pulse have been resolved. The experiments show that the material insulation and dispersion in sub-nanosecond pulse should be investigated deeply

  11. Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

    OpenAIRE

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    2004-01-01

    Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching d...

  12. Experimental investigation of 1 GW repeatable ultra-wide band pulse radiating source

    Energy Technology Data Exchange (ETDEWEB)

    Fanbao, Meng; Hongge, Ma; Chuanming, Zhou; Zhoubing, Yang; Wei, Lu; Bingquan, Ju; Huilong, Yu [China Academy of Engineering Physics, Chengdu (China)

    2000-11-01

    The single cycle pulse of 1.6 GW peak power with 20 Hz repetition-rate was generated. It radiated a peak power of more than 500 MW with a coaxial biconical antenna. The technological problems of the insulation and energy loss during generating and radiating high peak power ultra-wide band (UWB) pulse have been resolved. The experiments show that the material insulation and dispersion in subnanosecond pulse should be investigated deeply.

  13. Effects of crystallite structure and interface band alignment on the photocatalytic property of bismuth ferrite/ (N-doped) graphene composites

    International Nuclear Information System (INIS)

    Li, Pai; Chen, Qiang; Lin, Yinyin; Chang, Gang; He, Yunbin

    2016-01-01

    Bismuth ferrite/graphene (N-doped graphene) photocatalysts are successfully prepared by a facile and effective two-step hydrothermal method. Bismuth ferrite/graphene shows superior photocatalytic activity compared with bismuth ferrite/N-doped graphene and pure BiFeO 3 . X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy analyses indicate that Bi 25 FeO 40 crystalline phase is obtained with the addition of graphene, while BiFeO 3 is formed under the same hydrothermal conditions in the presence of N-doped graphene. Core-level and valence-band X-ray photoelectron spectroscopy analyses reveal a downward band bending of bismuth ferrite (∼0.5 eV) at the interface of the bismuth ferrite/(N-doped) graphene composites, which facilitates the electron transfer from bismuth ferrite to (N-doped) graphene and suppresses the recombination of photo-generated electron–hole pairs. This downward bending band alignment at the interface supposes to be the main mechanism underlying the enhanced photocatalytic activity of the bismuth ferrite/graphene composites that are currently of great interest in the photocatalysis field. - Highlights: • Bismuth ferrite/(N-doped) graphene composites were prepared by a hydrothermal method. • Bi 25 FeO 40 and BiFeO 3 were obtained with presence of graphene and N-graphene, respectively. • Bi 25 FeO 40 /graphene shows superior photocatalytic activity over BiFeO 3 and BiFeO 3 /N-graphene. • A downward band bending (∼0.5 eV) of bismuth ferrite exists at the composites interface. • The downward band bending supposes to be the mechanism for the enhanced photocatalytic activity.

  14. Wide frequency independently controlled dual-band inkjet-printed antenna

    KAUST Repository

    AbuTarboush, Hattan F.

    2014-01-08

    A low-cost inkjet-printed multiband monopole antenna is presented. The unique advantage of the proposed antenna is the freedom to adjust and set the dual-band of the antenna independently over a wide range (148.83%). To demonstrate the independent control feature, the 2.4 and 3.4 GHz bands for the wireless local area network (WLAN) and worldwide interoperability for microwave access (WiMAX) applications are selected as an example. The measured impedance bandwidths for the 2.4 and 3.4 GHz are 15.2 and 23.7%, respectively. These dual-bands have the ability to be controlled independently between 1.1 and 7.5 GHz without affecting the other band. In addition, the proposed antenna can be assigned for different mobile and wireless applications such as GPS, PCS, GSM 1800, 1900, UMTS, and up to 5-GHz WLAN and WiMAX applications. The mechanism of independent control of each radiator through dimensional variation is discussed in detail. The antenna has a compact size of 10 × 37.3 × 0.44 mm3, leaving enough space for the driving electronics on the paper substrate. The measured results from the prototype are in good agreement with the simulated results. Owing to inkjet printing on an ordinary paper, the design is extremely light weight and highly suitable for low cost and large volume manufacturing. © The Institution of Engineering and Technology 2013.

  15. Sequential tunneling in doped superlattices: Fingerprints of impurity bands and photon-assisted tunneling

    DEFF Research Database (Denmark)

    Wacker, Andreas; Jauho, Antti-Pekka; Zeuner, S.

    1997-01-01

    the current-voltage characteristics substantially, and we find two different current peaks whose relative height changes with the electron temperature. These findings can explain the observation of different peaks in the current-voltage characteristics with and without external THz irradiation in low......-doped samples. From our microscopic transport model we obtain quantitative agreement with the experimental current-voltage characteristics without using any fitting parameters. Both our experimental data and our theory show that absolute negative conductance persists over a wide range of frequencies of the free...

  16. Proposal of a wide-band mirror polarizer of slow neutrons at a pulsed neutron source

    International Nuclear Information System (INIS)

    Nikitenko, Yu.V.; Ostanevich, Yu.M.

    1993-01-01

    The new type of wide-band mirror-based neutron polarizer, which is to be operated at a pulsed neutron source, is suggested. The idea is to use a movable polarizing mirror system, which, with the incoming beam monochromatized by the time-of-flight, would allow one to tune glancing angles in time so that the total reflection condition is always fulfilled only for one of the two neutron spin eigenstates. Estimates show that with the pulsed reactor IBR-2 such a polarizer allows one to build a small angle neutron scattering instrument capable of effectively using the wavelength band from 2 A with a rather high luminosity (time-averaged flux at sample position being up to 10 7 n/s/cm -2 ). (orig.)

  17. Transparent wide band gap crystals follow indirect allowed transition and bipolaron hopping mechanism

    Directory of Open Access Journals (Sweden)

    Feroz A. Mir

    2014-01-01

    Full Text Available Recently, we carried out structural, optical and dielectric studies on micro-crystals of Oxypeucedanin (C16H14O5, isolated from the roots of plant Prangos pabularia (Mir et al. (2014 [3,4]. The obtained trend in frequency exponent (s with frequency (ω indicates that the universal dynamic response is followed by this compound. From optical absorption spectroscopy, the optical band gap (Eg was estimated around 3.76 eV and system is showing indirect allowed transition. Using Eg in certain relation of s, a close value of s (as much close obtained by fitting ac conductivity was obtained. This method was further used for other similar systems and again same trend was obtained. So a general conclusion was made that the high transmitting wide band insulators or semiconductors may follow bipolaron hopping transport mechanism.

  18. Widely tunable narrow-band coherent Terahertz radiation from an undulator at THU

    Science.gov (United States)

    Su, X.; Wang, D.; Tian, Q.; Liang, Y.; Niu, L.; Yan, L.; Du, Y.; Huang, W.; Tang, C.

    2018-01-01

    There is anxious demand for intense widely tunable narrow-band Terahertz (THz) radiation in scientific research, which is regarded as a powerful tool for the coherent control of matter. We report the generation of widely tunable THz radiation from a planar permanent magnet undulator at Tsinghua University (THU). A relativistic electron beam is compressed by a magnetic chicane into sub-ps bunch length to excite THz radiation in the undulator coherently. The THz frequency can be tuned from 0.4 THz to 10 THz continuously with narrow-band spectrums when the undulator gap ranges from 23 mm to 75 mm. The measured pulse THz radiation energy from 220 pC bunch is 3.5 μJ at 1 THz and tens of μJ pulse energy (corresponding peak power of 10 MW) can be obtained when excited by 1 nC beam extrapolated from the property of coherent radiation. The experimental results agree well with theoretical predictions, which demonstrates a suitable THz source for the many applications that require intense and widely tunable THz sources.

  19. Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

    International Nuclear Information System (INIS)

    Meevasana, Warawat

    2010-01-01

    Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

  20. Chemical synthesis of Cd-free wide band gap materials for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R.; Sartale, S.D.; Ennaoui, A. [Hahn-Meitner-Institut, Berlin (Germany). Department of Solar Energy Research; Lokhande, C.D. [Shivaji University, Kolhapur (India). Department of Physics

    2004-07-01

    Chemical methods are nowadays very attractive, since they are relatively simple, low cost and convenient for larger area deposition of thin films. In this paper, we outline our work related to the synthesis and characterization of some wide band gap semiconducting material thin films prepared by using solution methods, namely, chemical bath deposition and successive ionic layer adsorption and reaction (SILAR). The optimum preparative parameters are given and respective structural, surface morphological, compositional, optical, and electrical properties are described. Some materials we used in solar cells as buffer layers and achieved remarkable results, which are summarized. (author)

  1. Switching mechanism due to the spontaneous emission cancellation in photonic band gap materials doped with nano-particles

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London, Canada N6A 3K7 (Canada)]. E-mail: msingh@uwo.ca

    2007-03-26

    We have investigated the switching mechanism due to the spontaneous emission cancellation in a photonic band gap (PBG) material doped with an ensemble of four-level nano-particles. The effect of the dipole-dipole interaction has also been studied. The linear susceptibility has been calculated in the mean field theory. Numerical simulations for the imaginary susceptibility are performed for a PBG material which is made from periodic dielectric spheres. It is predicted that the system can be switched between the absorbing state and the non-absorbing state by changing the resonance energy within the energy bands of the photonic band gap material.0.

  2. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

    Science.gov (United States)

    Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

    2018-01-01

    We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

  3. Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

    Science.gov (United States)

    Flores, Mauricio A.

    2018-01-01

    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

  4. Joint density of states of wide-band-gap materials by electron energy loss spectroscopy

    International Nuclear Information System (INIS)

    Fan, X.D.; Peng, J.L.; Bursill, L.A.

    1998-01-01

    Kramers-Kronig analysis for parallel electron energy loss spectroscopy (PEELS) data is developed as a software package. When used with a JEOL 4000EX high-resolution transmission electron microscope (HRTEM) operating at 100 keV this allows us to obtain the dielectric function of relatively wide band gap materials with an energy resolution of approx 1.4 eV. The imaginary part of the dielectric function allows the magnitude of the band gap to be determined as well as the joint-density-of-states function. Routines for obtaining three variations of the joint-density of states function, which may be used to predict the optical and dielectric response for angle-resolved or angle-integration scattering geometries are also described. Applications are presented for diamond, aluminum nitride (AlN), quartz (SiO 2 ) and sapphire (Al 2 O 3 ). The results are compared with values of the band gap and density of states results for these materials obtained with other techniques. (authors)

  5. Design Considerations for Autocalibrations of Wide-Band ΔΣ Fractional-N PLL Synthesizers

    Directory of Open Access Journals (Sweden)

    Jaewook Shin

    2011-01-01

    Full Text Available Autocalibration of VCO frequency and loop gain is an essential process in PLL frequency synthesizers. In a wide tuning-range fractional-N PLL frequency synthesizer, high-speed and high-precision automatic calibration is especially important for shortening the lock time and improving the phase noise. This paper reviews the design issues of the PLL auto-calibration and discusses on the limitations of the previous techniques. A very simple and efficient auto-calibration method based on a high-speed frequency-to-digital converter (FDC is proposed and verified through simulations. The proposed method is highly suited for a very wide-band ΔΣ fractional-N PLL.

  6. Conjugation of fiber-coupled wide-band light sources and acousto-optical spectral elements

    Science.gov (United States)

    Machikhin, Alexander; Batshev, Vladislav; Polschikova, Olga; Khokhlov, Demid; Pozhar, Vitold; Gorevoy, Alexey

    2017-12-01

    Endoscopic instrumentation is widely used for diagnostics and surgery. The imaging systems, which provide the hyperspectral information of the tissues accessible by endoscopes, are particularly interesting and promising for in vivo photoluminescence diagnostics and therapy of tumour and inflammatory diseases. To add the spectral imaging feature to standard video endoscopes, we propose to implement acousto-optical (AO) filtration of wide-band illumination of incandescent-lamp-based light sources. To collect maximum light and direct it to the fiber-optic light guide inside the endoscopic probe, we have developed and tested the optical system for coupling the light source, the acousto-optical tunable filter (AOTF) and the light guide. The system is compact and compatible with the standard endoscopic components.

  7. Ultrathin triple-band polarization-insensitive wide-angle compact metamaterial absorber

    International Nuclear Information System (INIS)

    Shang, Shuai; Yang, Shizhong; Tao, Lu; Yang, Lisheng; Cao, Hailin

    2016-01-01

    In this study, the design, realization, and characterization of an ultrathin triple-band polarization-insensitive wide-angle metamaterial absorber are reported. The metamaterial absorber comprises a periodic array of modified six-fold symmetric snowflake-shaped resonators with strip spiral line load, which is printed on a dielectric substrate backed by a metal ground plane. It is shown that the absorber exhibits three distinct near-unity absorption peaks, which are distributed across C, X, Ku bands, respectively. Owing to the six-fold symmetry, the absorber is insensitive to the polarization of the incident radiation. In addition, the absorber shows excellent absorption performance over wide oblique incident angles for both transverse electric and transverse magnetic polarizations. Simulated surface current and field distributions at the three absorption peaks are demonstrated to understand the absorption mechanism. Particularly, the absorption modes come from the fundamental and high-order dipole resonances. Furthermore, the experimental verification of the designed absorber is conducted, and the measured results are in reasonable agreement with the simulated ones. The proposed ultrathin (∼0.018λ 0 , λ 0 corresponding to the lowest peak absorption frequency) compact (0.168λ 0 ×0.168λ 0 corresponding to the area of a unit cell) absorber enables potential applications such as stealth technology, electromagnetic interference and spectrum identification.

  8. The study of response of wide band gap semiconductor detectors using the Geant4

    Directory of Open Access Journals (Sweden)

    Hussain Riaz

    2014-01-01

    Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

  9. Effect of Pd ion doping in the band gap of SnO{sub 2} nanoparticles: structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Nandan, Brajesh; Venugopal, B. [Pondicherry University, Centre for Nanoscience and Technology (India); Amirthapandian, S.; Panigrahi, B. K. [Indira Gandhi Centre for Atomic Research, Ion Beam and Computer Simulation Section, Materials Science Group (India); Thangadurai, P., E-mail: thangadurai.p@gmail.com [Pondicherry University, Centre for Nanoscience and Technology (India)

    2013-10-15

    Pd ion doping has influenced the band gap of SnO{sub 2} nanoparticles. Undoped and Pd ion-doped SnO{sub 2} nanoparticles were synthesized by chemical co-precipitation method. A tetragonal phase of SnO{sub 2} with a grain size range of 7-13 nm was obtained (studied by X-ray diffraction and transmission electron microscopy). A decreasing trend in the particle size with increasing doping concentration was observed. The presence of Pd in doped SnO{sub 2} was confirmed by chemical analysis carried out by energy-dispersive spectroscopy in the transmission electron microscope. Diffuse reflectance spectra showed a blue shift in absorption with increasing palladium concentration. Band gap of SnO{sub 2} nanoparticles was estimated from the diffuse reflectance spectra using Kubelka-Munk function and it was increasing with the increase of Pd ion concentration from 3.73 to 4.21 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. All the samples showed a broad photoluminescence emission centered at 375 nm when excited at 270 nm. A systematic study on the structural and optical properties of SnO{sub 2} nanoparticles is presented.

  10. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  11. Calculating the optical properties of defects and surfaces in wide band gap materials

    Science.gov (United States)

    Deák, Peter

    2018-04-01

    The optical properties of a material critically depend on its defects, and understanding that requires substantial and accurate input from theory. This paper describes recent developments in the electronic structure theory of defects in wide band gap materials, where the standard local or semi-local approximations of density functional theory fail. The success of the HSE06 screened hybrid functional is analyzed in case of Group-IV semiconductors and TiO2, and shown that it is the consequence of error compensation between semi-local and non-local exchange, resulting in a proper derivative discontinuity (reproduction of the band gap) and a total energy which is a linear function of the fractional occupation numbers (removing most of the electron self-interaction). This allows the calculation of electronic transitions with accuracy unseen before, as demonstrated on the single-photon emitter NV(-) center in diamond and on polaronic states in TiO2. Having a reliable tool for electronic structure calculations, theory can contribute to the understanding of complicated cases of light-matter interaction. Two examples are considered here: surface termination effects on the blinking and bleaching of the light-emission of the NV(-) center in diamond, and on the efficiency of photocatalytic water-splitting by TiO2. Finally, an outlook is presented for the application of hybrid functionals in other materials, as, e.g., ZnO, Ga2O3 or CuGaS2.

  12. The new Wide-band Solar Neutrino Trigger for Super-Kamiokande

    Science.gov (United States)

    Carminati, Giada

    Super-Kamiokande observes low energy electrons induced by the elastic scattering of 8B solar neutrinos. The transition region between vacuum and matter oscillations, with neutrino energy near 3 MeV, is still partially unexplored by any detector. Super-Kamiokande can study this intermediate regime adding a new software trigger. The Wide-band Intelligent Trigger (WIT) has been developed to simultaneously trigger and reconstruct very low energy electrons (above 2.49 kinetic MeV) with an e_ciency close to 100%. The WIT system, comprising 256-Hyperthreaded CPU cores and one 10-Gigabit Ethernet network switch, has been recently installed and integrated in the online DAQ system of SK and the complete system is currently in an advanced status of online data testing.

  13. Biocompatibility of a functionally graded bioceramic coating made by wide-band laser cladding.

    Science.gov (United States)

    Weidong, Zhu; Qibin, Liu; Min, Zheng; Xudong, Wang

    2008-11-01

    The application of plasma spray is the most popular method by which a metal-bioceramic surface composite can be prepared for the repair of biological hard-tissue, but this method has disadvantages. These disadvantages include poor coating-to-substrate adhesion, low mechanical strength, and brittleness of the coating. In the investigation described in this article, a gradient bioceramic coating was prepared on a Ti-6Al-4V titanium alloy surface using a gradient composite design and wide-band laser cladding techniques. Using a trilayer-structure composed of a substratum, an alloy and bioceramics, the coating was chemically and metallurgically bonded with the substratum. The coating, which contains beta-tricalcium phosphate and hydroxyapatite, showed favorable biocompatibility with the bone tissue and promoted in vivo osteogenesis.

  14. The first observations of wide-band interferometers and the spectra of relic gravitons

    CERN Document Server

    Giovannini, Massimo

    2016-01-01

    Stochastic backgrounds of relic gravitons of cosmological origin extend from frequencies of the order of the aHz up to the GHz range. Since the temperature and polarization anisotropies constrain the low frequency normalization of the spectra, in the concordance paradigm the strain amplitude corresponding to the frequency window of wide-band interferometers turns out to be, approximately, nine orders of magnitude smaller than the astounding signal recently reported and attributed to a binary black hole merger. The backgrounds of relic gravitons expected from the early Universe are compared with the stochastic foregrounds stemming from the estimated multiplicity of the astrophysical sources. It is suggested that while the astrophysical foregrounds are likely to dominate between few Hz and 10 kHz, relic gravitons with frequencies exceeding 100 kHz represent a potentially uncontaminated signal for the next generation of high-frequency detectors currently under scrutiny.

  15. Spin-dependent recombination processes in wide band gap II-Mn-VI compounds

    International Nuclear Information System (INIS)

    Godlewski, M.; Yatsunenko, S.; Khachapuridze, A.; Ivanov, V.Yu.

    2004-01-01

    Mechanisms of optical detection of magnetic resonance in wide band gap II-Mn-VI diluted magnetic semiconductor (DMS) are discussed based on the results of photoluminescence (PL), PL kinetics, electron spin resonance (ESR) and optically detected magnetic resonance (ODMR) and optically detected cyclotron resonance (ODCR) investigations. Spin-dependent interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free, localized or bound carriers are responsible for the observed ODMR signals. We conclude that these interactions are responsible for the observed rapid shortening of the PL decay time of 4 T 1 → 6 A 1 intra-shell emission of Mn 2+ ions and also for the observed delocalization of excitons in low dimensional structures

  16. On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos

    Power semiconductor technology has dominated the evolution of switched mode power supplies (SMPS). Advances in silicon (Si) technology, as the introduction of metal oxide field effect transistor (MOSFET), isolated gate bipolar transistors (IGBT), superjunction vertical structures and Schottky...... diodes, or the introduction of silicon carbide (SiC) diodes, provided large steps in miniaturization and efficiency improvement of switched mode power converters. Gallium nitride (GaN) and SiC semiconductor devices have already been around for some years. The first one proliferated due to the necessity...... of high frequency operation in optoelectronics applications. On the other hand, Schottky SiC power diodes were introduced in 2001 as an alternative to eliminate reverse recovery issues in Si rectifiers. Wide band-gap semiconductors offer an increased electrical field strength and electron mobility...

  17. Wide-band gap devices in PV systems - opportunities and challenges

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Cristian; Eni, Emanuel-Petre; Blaabjerg, Frede

    2014-01-01

    have an important role in the cost reduction. To increase the efficiency of PV systems, most of solutions for PV inverters have moved to three-level (3L) structures reaching typical efficiencies of 98% due to low switching losses of 600V Si IGBT or MOSFET and reduced core losses in the filter......The recent developments in wide band-gap devices based GaN and SiC is showing a high impact on the PV-inverter technology, which is strongly influenced by efficiency, power density and cost. Besides the high efficiency of PV inverters, also the mechanical size, the compactness and simple structure......) three-phase PV-inverter topologies in terms of efficiency, thermal loading distribution and costs. Moreover the above mentioned PV-inverters are built and tested in laboratory in order to validate the obtained results....

  18. Low-noise wide-band amplifiers for stochastic beam cooling experiments

    International Nuclear Information System (INIS)

    Leskovar, B.; Lo, C.C.

    1982-01-01

    Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35 0 K at ambient temperature of 20 0 K. An analysis of preamplifier stability based on scattering parameters concept is included

  19. Dielectric-based subwavelength metallic meanders for wide-angle band absorbers.

    Science.gov (United States)

    Shen, Su; Qiao, Wen; Ye, Yan; Zhou, Yun; Chen, Linsen

    2015-01-26

    We propose nano-meanders that can achieve wide-angle band absorption in visible regime. The nano-meander consists of a subwavelength dielectric grating covered by continuous ultra-thin Aluminum film (less than one tenth of the incident wavelength). The excited photonic resonant modes, such as cavity mode, surface plasmonic mode and Rayleigh-Wood anomaly, are discussed in detail. Nearly total resonant absorption due to funneling mechanism in the air nano-groove is almost invariant with large incident angle in transverse magnetic polarization. From both the structural geometry and the nanofabrication point of view, the light absorber has a very simple geometrical structure and it is easy to be integrated into complex photonic devices. The highly efficient angle-robust light absorber can be potential candidate for a range of passive and active photonic applications, including solar-energy harvesting as well as producing artificial colors on a large scale substrate.

  20. Electrochromic devices based on wide band-gap nanocrystalline semiconductors functionalized with mononuclear charge transfer compounds

    DEFF Research Database (Denmark)

    Biancardo, M.; Argazzi, R.; Bignozzi, C.A.

    2006-01-01

    A series of ruthenium and iron mononuclear complexes were prepared and their spectroeletrochemical behavior characterized oil Optically Transparent Thin Layer Electrodes (OTTLE) and on Fluorine Doped SnO2 (FTO) conductive glasses coated with Sb-doped nanocrystalline SnO2. These systems display a ...

  1. Transparency and spontaneous emission in a densely doped photonic band gap material

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)

    2006-12-28

    The susceptibility has been calculated for a photonic crystal in the presence of spontaneous cancellation and dipole-dipole interaction. The crystal is densely doped with an ensemble of four-level nano-particles in Y-type configuration. Probe and a pump laser fields are applied to manipulate the absorption coefficient of the system. The expression of the susceptibility has been calculated in the linear response regime of the probe field but nonlinear terms are included for the pump field. It is found that in the presence of spontaneous emission cancellation there is an increase in the height of the two absorption peaks however the phenomenon of electromagnetically induced transparency (EIT) is not affected. On the other hand, there is a change in the height and location of the two peaks in the presence of dipole-dipole interactions. For certain values the particle density of the system can be switched from the EIT state to the non-EIT state. It is also found that when the resonance energies for two spontaneous emission channels lie close to the band edge, the EIT phenomenon disappears.

  2. Enhanced Photocatalytic Activity of La3+-Doped TiO2 Nanotubes with Full Wave-Band Absorption

    Science.gov (United States)

    Xia, Minghao; Huang, Lingling; Zhang, Yubo; Wang, Yongqian

    2018-06-01

    TiO2 nanotubes doped with La3+ were synthesized by anodic oxidation method and the photocatalytic activity was detected by photodegrading methylene blue. As-prepared samples improved the absorption of both ultraviolet light and visible light and have a great enhancement on the photocatalytic activity while contrasting with the pristine TiO2 nanotubes. A tentative mechanism for the enhancement of photocatalytic activity with full wave-band absorption is proposed.

  3. Wide band design on the scaled absorbing material filled with flaky CIPs

    Science.gov (United States)

    Xu, Yonggang; Yuan, Liming; Gao, Wei; Wang, Xiaobing; Liang, Zichang; Liao, Yi

    2018-02-01

    The scaled target measurement is an important method to get the target characteristic. Radar absorbing materials are widely used in the low detectable target, considering the absorbing material frequency dispersion characteristics, it makes designing and manufacturing scaled radar absorbing materials on the scaled target very difficult. This paper proposed a wide band design method on the scaled absorbing material of the thin absorption coating with added carbonyl iron particles. According to the theoretical radar cross section (RCS) of the plate, the reflection loss determined by the permittivity and permeability was chosen as the main design factor. Then, the parameters of the scaled absorbing materials were designed using the effective medium theory, and the scaled absorbing material was constructed. Finally, the full-size coating plate and scaled coating plates (under three different scale factors) were simulated; the RCSs of the coating plates were numerically calculated and measured at 4 GHz and a scale factor of 2. The results showed that the compensated RCS of the scaled coating plate was close to that of the full-size coating plate, that is, the mean deviation was less than 0.5 dB, and the design method for the scaled material was very effective.

  4. Enhanced performance of an S-band fiber laser using a thulium-doped photonic crystal fiber

    Science.gov (United States)

    Muhammad, A. R.; Emami, S. D.; Hmood, J. K.; Sayar, K.; Penny, R.; Abdul-Rashid, H. A.; Ahmad, H.; Harun, S. W.

    2014-11-01

    This work proposes a new method to enhance the performance of an S-band fiber laser by using a thulium-doped photonic crystal fiber (PCF). The proposed method is based on amplified spontaneous emission (ASE) suppression provided by the thulium-doped PCF unique geometric structure. The enhanced performance of this filter based PCF is dependent on the short and long cut-off wavelength characteristics that define the fiber transmission window. Realizing the short wavelength cut-off location requires the PCF cladding to be doped with a high index material, which provides a refractive index difference between the core and cladding region. Achieving the long cut-off wavelength necessitates enlarging the size of the air holes surrounding the rare-earth doped core region. The PCF structure is optimized so as to achieve the desired ASE suppression regions of below 0.8 μm and above 1.8 μm. The laser performance is simulated for different host media, namely pure silica, alumino-silicate, and fluoride-based fiber ZBLAN based on this thulium-doped PCF design. The host media spectroscopic details, including lifetime variations and quantum efficiency effect on the lasing emission are also discussed. Information on the filter based PCF design is gathered via a full-vectorial finite element method analysis and specifically a numerical modelling solution for the energy level rate equation using the Runge-Kutta method. Results are analyzed for gain improvement, lasing cavity, laser efficiency and effect of core size diameter variation. Results are compared with conventional thulium-doped fiber and thulium-doped PCF for every single host media. We observe that the ZBLAN host media is the most promising candidate due to its greater quantum efficiency.

  5. Enhanced performance of an S-band fiber laser using a thulium-doped photonic crystal fiber

    International Nuclear Information System (INIS)

    Muhammad, A R; Emami, S D; Penny, R; Ahmad, H; Harun, S W; Hmood, J K; Sayar, K; Abdul-Rashid, H A

    2014-01-01

    This work proposes a new method to enhance the performance of an S-band fiber laser by using a thulium-doped photonic crystal fiber (PCF). The proposed method is based on amplified spontaneous emission (ASE) suppression provided by the thulium-doped PCF unique geometric structure. The enhanced performance of this filter based PCF is dependent on the short and long cut-off wavelength characteristics that define the fiber transmission window. Realizing the short wavelength cut-off location requires the PCF cladding to be doped with a high index material, which provides a refractive index difference between the core and cladding region. Achieving the long cut-off wavelength necessitates enlarging the size of the air holes surrounding the rare-earth doped core region. The PCF structure is optimized so as to achieve the desired ASE suppression regions of below 0.8 μm and above 1.8 μm. The laser performance is simulated for different host media, namely pure silica, alumino-silicate, and fluoride-based fiber ZBLAN based on this thulium-doped PCF design. The host media spectroscopic details, including lifetime variations and quantum efficiency effect on the lasing emission are also discussed. Information on the filter based PCF design is gathered via a full-vectorial finite element method analysis and specifically a numerical modelling solution for the energy level rate equation using the Runge–Kutta method. Results are analyzed for gain improvement, lasing cavity, laser efficiency and effect of core size diameter variation. Results are compared with conventional thulium-doped fiber and thulium-doped PCF for every single host media. We observe that the ZBLAN host media is the most promising candidate due to its greater quantum efficiency. (paper)

  6. Observation of intermediate bands in Eu3+ doped YPO4 host: Li+ ion effect and blue to pink light emitter

    Directory of Open Access Journals (Sweden)

    Abdul Kareem Parchur

    2012-09-01

    Full Text Available This article explores the tuning of blue to pink colour generation from Li+ ion co-doped YPO4:5Eu nanoparticles prepared by polyol method at ∼100-120 °C with ethylene glycol (EG as a capping agent. Interaction of EG molecules capped on the surface of the nanoparticles and/or created oxygen vacancies induces formation of intermediate/mid gap bands in the host structure, which is supported by UV-Visible absorption data. Strong blue and pink colors can be observed in the cases of as-prepared and 500 °C annealed samples, respectively. Co-doping of Li+ enhances the emission intensities of intermediate band as well as Eu3+. On annealing as-prepared sample to 500 °C, the intermediate band emission intensity decreases, whereas Eu3+ emission intensity increases suggesting increase of extent of energy transfer from the intermediate band to Eu3+ on annealing. Emission intensity ratio of electric to magnetic dipole transitions of Eu3+ can be varied by changing excitation wavelength. The X-ray photoelectron spectroscopy (XPS study of as-prepared samples confirms the presence of oxygen vacancies and Eu3+ but absence of Eu2+. Dispersed particles in ethanol and polymer film show the strong blue color, suggesting that these materials will be useful as probes in life science and also in light emitting device applications.

  7. Band gap tuning of ZnO nanoparticles via Mg doping by femtosecond laser ablation in liquid environment

    International Nuclear Information System (INIS)

    Chelnokov, E.; Rivoal, M.; Colignon, Y.; Gachet, D.; Bekere, L.; Thibaudau, F.; Giorgio, S.; Khodorkovsky, V.; Marine, W.

    2012-01-01

    Highlights: ► Femtosecond laser ablation synthesis of Mg doped ZnO nanoparticles. ► Electronic properties of ZnO are modified by Mg. ► Band gap and exciton energy shifts to the blue. ► The exciton energy shift is saturated at Mg content of about 20%. ► Phase separation at Mg content is at more than 25%. ► Mechanism of exciton pinning – recombination via new surface states. - Abstract: We use multiphoton IR femtosecond laser ablation to induce non-thermal non-equilibrium conditions of the nanoparticle growth in liquids. Modifications of the electronic properties of ZnO NP were achieved by Mg ion doping of targets prepared from mixtures of Zn and Mg acetylacetonates. The nanoparticle sizes were 3–20 nm depending on the ablation conditions. X-ray fluorescence indicates that stoichiometric ablation and incorporation of Mg in nanocrystalline ZnO occurs. HRTEM observations show that nanoparticles retain their wurtzite structure, while at high Mg concentrations we detect the MgO rich domains. Exciton emissions exhibit relatively narrow bands with progressive and controlled blue shifts up to 184 meV. The exciton energy correlates to band edge absorption indicating strong modification of the NP band gaps. Stabilisation of the exciton blue shift is observed at high Mg concentration. It is accompanied by the formation of structure defects and ZnO/MgO phase separation within the nanoparticles.

  8. Wide-band all-angle acoustic self-collimation by rectangular sonic crystals with elliptical bases

    International Nuclear Information System (INIS)

    Cicek, Ahmet; Kaya, Olgun Adem; Ulug, Bulent

    2011-01-01

    Self-collimation of acoustic waves in the whole angular range of ±90 0 in the second and third bands of a two-dimensional rectangular sonic crystal with elliptical basis is demonstrated by examining the band structure and equifrequency contours. 70% and 77% of the second and third bands are available for wide-band all-angle self-collimation spanning a bandwidth of approximately 29% and 25% of the central frequencies of the all-angle self-collimation frequency ranges, respectively. Self-collimation of waves over large distances with a small divergence of beam width in the transverse direction is demonstrated through computations based on the finite element method. The second and third bands available for self-collimation are seen to vary linearly in the vast mid-range where a small group velocity dispersion prevents temporal divergence of waves with different frequencies.

  9. Wide-banded NTC radiation: local to remote observations by the four Cluster satellites

    Directory of Open Access Journals (Sweden)

    P. M. E. Décréau

    2015-10-01

    Full Text Available The Cluster multi-point mission offers a unique collection of non-thermal continuum (NTC radio waves observed in the 2–80 kHz frequency range over almost 15 years, from various view points over the radiating plasmasphere. Here we present rather infrequent case events, such as when primary electrostatic sources of such waves are embedded within the plasmapause boundary far from the magnetic equatorial plane. The spectral signature of the emitted electromagnetic waves is structured as a series of wide harmonic bands within the range covered by the step in plasma frequency encountered at the boundary. Developing the concept that the frequency distance df between harmonic bands measures the magnetic field magnitude B at the source (df = Fce, electron gyrofrequency, we analyse three selected events. The first one (studied in Grimald et al., 2008 presents electric field signatures observed by a Cluster constellation of small size (~ 200 to 1000 km spacecraft separation placed in the vicinity of sources. The electric field frequency spectra display frequency peaks placed at frequencies fs = n df (n being an integer, with df of the order of Fce values encountered at the plasmapause by the spacecraft. The second event, taken from the Cluster tilt campaign, leads to a 3-D view of NTC waves ray path orientations and to a localization of a global source region at several Earth radii (RE from Cluster (Décréau et al., 2013. The measured spectra present successive peaks placed at fs ~ (n+ 1/2 df. Next, considering if both situations might be two facets of the same phenomenon, we analyze a third event. The Cluster fleet, configured into a constellation of large size (~ 8000 to 25 000 km spacecraft separation, allows us to observe wide-banded NTC waves at different distances from their sources. Two new findings can be derived from our analysis. First, we point out that a large portion of the plasmasphere boundary layer, covering a large range of magnetic

  10. Band structure of TiO sub 2 -doped yttria-stabilized zirconia probed by soft-x-ray spectroscopy

    CERN Document Server

    Higuchi, T; Kobayashi, K; Yamaguchi, S; Fukushima, A; Shin, S

    2003-01-01

    The electronic structure of TiO sub 2 -doped yttria-stabilized zirconia (YSZ) has been studied by soft-X-ray emission spectroscopy (SXES) and X-ray absorption spectroscopy (XAS). The valence band is mainly composed of the O 2p state. The O 1s XAS spectrum exhibits the existence of the Ti 3d unoccupied state under the Zr 4d conduction band. The intensity of the Ti 3d unoccupied state increases with increasing TiO sub 2 concentration. The energy separation between the top of the valence band and the bottom of the Ti 3d unoccupied state is in accord with the energy gap, as expected from dc-polarization and total conductivity measurements. (author)

  11. Indium doped Cd{sub 1-x}Zn{sub x}O alloys as wide window transparent conductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Walukiewicz, W. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-12-31

    We have synthesized Indium doped Cd{sub 1-x}Zn{sub x}O alloys across the full composition range using magnetron sputtering method. The crystallographic structure of these alloys changes from rocksalt (RS) to wurtzite (WZ) when the Zn content is higher than 30%. The rocksalt phase alloys in the composition range 0 < x < 0.3 can be efficiently n-type doped, shifting the absorption edge to 3.25 eV and reducing resistivity to about 2.0 × 10{sup −4} Ω-cm. We found that In doped CdO (ICO) transmits more solar photons than commercial fluorine doped tin oxide (FTO) with comparable sheet conductivity. The infrared transmittance is further extended to longer than 1500 nm wavelengths by depositing the In doped Cd{sub 1-x}Zn{sub x}O in ~ 1% of O{sub 2}. This material has a potential for applications as a transparent conductor for silicon and multi-junction solar cells. - Highlights: • Indium doped Cd1-xZnxO alloys across the full composition range were synthesized. • Alloys change from rocksalt (RS) to wurtzite (WZ) when x is higher than 30%. • RS-Cd1-xZnxO phase can be doped with In as efficiently as CdO, achieving a low resistivity ~ 2.0 × 10{sup −4} Ω-cm. • Wide transparency window from 380 to 1200 nm • In doped CdO transmits more solar photons than commercial fluorine doped tin oxide.

  12. WIDE-BAND SPECTRA OF GIANT RADIO PULSES FROM THE CRAB PULSAR

    Energy Technology Data Exchange (ETDEWEB)

    Mikami, Ryo; Asano, Katsuaki [Institute for Cosmic Ray Research, The University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Tanaka, Shuta J. [Department of Physics, Faculty of Science and Engineering, Konan University, 8-9-1 Okamoto, Kobe, Hyogo, 658-8501 (Japan); Kisaka, Shota [Department of Physics and Mathematics, Aoyama Gakuin University, Sagamihara, Kanagawa, 252-5258 (Japan); Sekido, Mamoru; Takefuji, Kazuhiro [Kashima Space Technology Center, National Institute of Information and Communications Technology, Kashima, Ibaraki 314-8501 (Japan); Takeuchi, Hiroshi [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 252-5210 (Japan); Misawa, Hiroaki; Tsuchiya, Fuminori [Planetary Plasma and Atmospheric Research Center, Tohoku University, Sendai, Miyagi 980-8578 (Japan); Kita, Hajime [Department of Geophysics, Graduate School of Science, Tohoku University, Sendai, Miyagi 980-8578 (Japan); Yonekura, Yoshinori [Center for Astronomy, Ibaraki University, 2-1-1 Bunkyo, Mito, Ibaraki 310-8512 (Japan); Terasawa, Toshio, E-mail: mikami@icrr.u-tokyo.ac.jp, E-mail: asanok@icrr.u-tokyo.ac.jp [iTHES Research Group, RIKEN, Wako, Saitama 351-0198 (Japan)

    2016-12-01

    We present the results of the simultaneous observation of giant radio pulses (GRPs) from the Crab pulsar at 0.3, 1.6, 2.2, 6.7, and 8.4 GHz with four telescopes in Japan. We obtain 3194 and 272 GRPs occurring at the main pulse and the interpulse phases, respectively. A few GRPs detected at both 0.3 and 8.4 GHz are the most wide-band samples ever reported. In the frequency range from 0.3 to 2.2 GHz, we find that about 70% or more of the GRP spectra are consistent with single power laws and their spectral indices are distributed from −4 to −1. We also find that a significant number of GRPs have such a hard spectral index (approximately −1) that the fluence at 0.3 GHz is below the detection limit (“dim-hard” GRPs). Stacking light curves of such dim-hard GRPs at 0.3 GHz, we detect consistent enhancement compared to the off-GRP light curve. Our samples show apparent correlations between the fluences and the spectral hardness, which indicates that more energetic GRPs tend to show softer spectra. Our comprehensive studies on the GRP spectra are useful materials to verify the GRP model of fast radio bursts in future observations.

  13. Development of an ultra wide band microwave radar based footwear scanning system

    Science.gov (United States)

    Rezgui, Nacer Ddine; Bowring, Nicholas J.; Andrews, David A.; Harmer, Stuart W.; Southgate, Matthew J.; O'Reilly, Dean

    2013-10-01

    At airports, security screening can cause long delays. In order to speed up screening a solution to avoid passengers removing their shoes to have them X-ray scanned is required. To detect threats or contraband items hidden within the shoe, a method of screening using frequency swept signals between 15 to 40 GHz has been developed, where the scan is carried out whilst the shoes are being worn. Most footwear is transparent to microwaves to some extent in this band. The scans, data processing and interpretation of the 2D image of the cross section of the shoe are completed in a few seconds. Using safe low power UWB radar, scattered signals from the shoe can be observed which are caused by changes in material properties such as cavities, dielectric or metal objects concealed within the shoe. By moving the transmission horn along the length of the shoe a 2D image corresponding to a cross section through the footwear is built up, which can be interpreted by the user, or automatically, to reveal the presence of concealed threat within the shoe. A prototype system with a resolution of 6 mm or less has been developed and results obtained for a wide range of commonly worn footwear, some modified by the inclusion of concealed material. Clear differences between the measured images of modified and unmodified shoes are seen. Procedures for enhancing the image through electronic image synthesis techniques and image processing methods are discussed and preliminary performance data presented.

  14. Wide-band tracheids are present in almost all species of Cactaceae.

    Science.gov (United States)

    Mauseth, James D

    2004-02-01

    Wide-band tracheids (WBTs) have been found in seedlings of most species of cacti that have fibrous wood in their adult bodies. Consequently, this cell type is now known to be present in almost all cacti. Earlier studies of adult plants revealed WBTs to be present only in cacti with globose or short, broad bodies, whereas all species with large columnar or long slender bodies had fibrous wood without WBTs. However, even these species produce WBTs during the first several months after germination. In species with fibrous wood in their adult bodies (species with large or slender bodies), seedlings undergo a phase transition in wood morphogenesis after a few months and stop producing the juvenile (WBT) wood and begin producing adult (fibrous) wood. If adult plants have an intermediate size, the phase transition is delayed and the plant produces WBT wood for several years. Species with globose bodies repress the phase transition completely and never switch to producing adult (fibrous) wood. Because WBTs are so widespread, they probably originated only once in Cactaceae, not multiple times as suggested earlier, or there may have been just a single origin in the Cactaceae/Portulacaceae clade.

  15. Wide-band acousto-optic deflectors for large field of view two-photon microscope.

    Science.gov (United States)

    Jiang, Runhua; Zhou, Zhenqiao; Lv, Xiaohua; Zeng, Shaoqun

    2012-04-01

    Acousto-optic deflector (AOD) is an attractive scanner for two-photon microscopy because it can provide fast and versatile laser scanning and does not involve any mechanical movements. However, due to the small scan range of available AOD, the field of view (FOV) of the AOD-based microscope is typically smaller than that of the conventional galvanometer-based microscope. Here, we developed a novel wide-band AOD to enlarge the scan angle. Considering the maximum acceptable acoustic attenuation in the acousto-optic crystal, relatively lower operating frequencies and moderate aperture were adopted. The custom AOD was able to provide 60 MHz 3-dB bandwidth and 80% peak diffraction efficiency at 840 nm wavelength. Based on a pair of such AOD, a large FOV two-photon microscope was built with a FOV up to 418.5 μm (40× objective). The spatiotemporal dispersion was compensated simultaneously with a single custom-made prism. By means of dynamic power modulation, the variation of laser intensity within the FOV was reduced below 5%. The lateral and axial resolution of the system were 0.58-2.12 μm and 2.17-3.07 μm, respectively. Pollen grain images acquired by this system were presented to demonstrate the imaging capability at different positions across the entire FOV. © 2012 American Institute of Physics

  16. WIDE-BAND SPECTRA OF GIANT RADIO PULSES FROM THE CRAB PULSAR

    International Nuclear Information System (INIS)

    Mikami, Ryo; Asano, Katsuaki; Tanaka, Shuta J.; Kisaka, Shota; Sekido, Mamoru; Takefuji, Kazuhiro; Takeuchi, Hiroshi; Misawa, Hiroaki; Tsuchiya, Fuminori; Kita, Hajime; Yonekura, Yoshinori; Terasawa, Toshio

    2016-01-01

    We present the results of the simultaneous observation of giant radio pulses (GRPs) from the Crab pulsar at 0.3, 1.6, 2.2, 6.7, and 8.4 GHz with four telescopes in Japan. We obtain 3194 and 272 GRPs occurring at the main pulse and the interpulse phases, respectively. A few GRPs detected at both 0.3 and 8.4 GHz are the most wide-band samples ever reported. In the frequency range from 0.3 to 2.2 GHz, we find that about 70% or more of the GRP spectra are consistent with single power laws and their spectral indices are distributed from −4 to −1. We also find that a significant number of GRPs have such a hard spectral index (approximately −1) that the fluence at 0.3 GHz is below the detection limit (“dim-hard” GRPs). Stacking light curves of such dim-hard GRPs at 0.3 GHz, we detect consistent enhancement compared to the off-GRP light curve. Our samples show apparent correlations between the fluences and the spectral hardness, which indicates that more energetic GRPs tend to show softer spectra. Our comprehensive studies on the GRP spectra are useful materials to verify the GRP model of fast radio bursts in future observations.

  17. Improvement of the performance of microwave X band absorbers based on pure and doped Ba-hexaferrite

    Energy Technology Data Exchange (ETDEWEB)

    Seyyed Afghahi, Seyyed Salman [Department of Materials Science and Engineering, Imam Hossein University, Tehran (Iran, Islamic Republic of); Jafarian, Mojtaba, E-mail: m.jafarian@srbiau.ac.ir [Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salehi, Mohsen [Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Atassi, Yomen [Department of Applied Physics, Higher Institute for Applied Sciences and Technology, Damascus (Syrian Arab Republic)

    2017-01-01

    Optimum Fe/Ba mole ratio is determined in doped Ba-hexaferrite prepared via mechanical activation. X-ray diffractometer (XRD), scanning electron microscope (SEM), vibrating sample magnetometer (VSM) and vector network analyzer are used to analyze phases, structures, electromagnetic and microwave absorption properties. The mole ratio of Fe/Ba=10 is detected to be optimum for doping and synthesizing the Ba-hexaferrite. In order to achieve high absorption in X band the ions of Zr{sup 4+}–Sn{sup 4+}–Ti{sup 4+}–M{sup 2+} (M=Mg{sup 2+}, Zn{sup 2+}, Cu{sup 2+}, Co{sup 2+}) are used as dopants. The results indicate the formation of single phase Ba-hexaferrite in either pure or doped compounds without any non-magnetic intermediate phases and with spherical and hexagonal morphologies respectively for the pure and doped ferrite. It is found out that BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19} compound has the maximum saturation magnetization (49.80 emu/g). Also the composite of BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19} 50 wt% in epoxy resin exhibits a minimum reflection loss of −29 dB at 12.2 GHz with 2.6 GHz bandwidth. - Highlights: • Optimum Fe/Ba mole ratio is determined in doped Ba-hexaferrite. • Formation of a single phase M-hexaferrite, pure or doped when Fe/Ba=10. • Preparation of microwave absorber of BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19}/epoxy resin, 50 wt%. • The absorber exhibits a minimum RL of −29 dB at 12.2 GHz with 2.6 GHz bandwidth.

  18. Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Harun, S.W.; Ahmad, H.

    2004-01-01

    Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

  19. Dynamics of Gradient Bioceramic Composite Coating on Surface of Titanium Alloy by Wide-Band Laser Cladding

    Institute of Scientific and Technical Information of China (English)

    LIU Qi-bin; ZOU Long-jiang; ZHU Wei-dong; LI Hai-tao; DONG Chuang

    2004-01-01

    The gradient bioceramic coating was prepared on the surface of titanium alloy using wide-band laser cladding. The dynamics of gradient bioceramic composite coating containing hydroxyapatite (HA) prepared with mixture of CaHPO4*2H2O and CaCO3 under the condition of wide-band laser was studied theoretically. The corresponding mathematical model and its numerical solution were presented. The examination experiment showed that HA bioceramic composite coatings can be obtained by appropriately choosing wide-band laser cladding parameters. The microstructure and surface morphology of HA bioceramic coating were observed by SEM and X-ray diffraction. The experimental results showed that the bioceramic coating is composed of HA, β-TCP, CaO, CaTiO3 and TiO2. The surface of bioceramic coating takes coral-shaped structure or short-rod piled structure, which helps osteoblast grow into bioceramic and improves the biocompatibility.

  20. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  1. Band gap tuning and fluorescence properties of lead sulfide Pb0.9A0.1S (A: Fe, Co, and Ni) nanoparticles by transition metal doping

    Science.gov (United States)

    Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

    2018-02-01

    Transition metal-doped lead sulfide nanoparticles (PbS-NPs) were synthesized by co-precipitation method. The crystallite phase and morphological studies were carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Optical studies were performed by UV-Visible absorption, fluorescence emission spectroscopy and Fourier transforms infrared spectroscopy (FTIR). XRD analysis reveals that the pure and transition metal-doped PbS- NPs have a single crystalline phase with cubic structure devoided of any other secondary phase. The notable effect on optical absorbance and band gap was observed with transition metal doping in lead sulphide. The optical energy band gap values were found to increase with the doping of transition metal. UV-Visible absorption and fluorescence emission spectra display a blue shift with subsequent transition metal doping which may arise due to quantum confinement effect making it worth for having applications in optoelectronic devices.

  2. Broad band and enhanced photocatalytic behaviour of Ho3+-doped Bi2O3 micro-rods

    Science.gov (United States)

    Prasad, Neena; Karthikeyan, Balasubramanian

    2018-06-01

    Band-gap-tuned Bi2O3 micro-rods were synthesized using simple co-precipitation method by doping 5 wt% Ho3+ to mitigate the concentration of toxic dye from the polluted water using it as a photocatalyst. Structure and morphology of the prepared samples were identified using powder X-ray diffraction technique and scanning electron microscopy (SEM). Elemental composition and chemical state of the prepared samples were analyzed from the X-ray photoelectron spectroscopy (XPS). Considerable absorption in IR region was observed for Ho3+ doped Bi2O3 due to the electronic transitions of 5I8→5F4, 5I8→5F5, and 5I8→5I5, 5I6. The excellent ultra-violet (UV), white and infrared light (IR)-driven photocatalytic activity were suggested for pure and doped Bi2O3 samples. Ho3+-doped Bi2O3 micro-rods exhibits a better photocatalytic activity under white light irradiation. The consequence of the bandgap and the synergetic effect of Ho3+ and Bi2O3 on the photocatalytic degradation of MB were investigated.

  3. Serial topology of wide-band erbium-doped fiber amplifier for WDM applications

    Czech Academy of Sciences Publication Activity Database

    Karásek, Miroslav; Menif, M.

    2001-01-01

    Roč. 13, č. 9 (2001), s. 939-941 ISSN 1041-1135 R&D Projects: GA ČR GA102/99/0393 Institutional research plan: CEZ:AV0Z2067918 Keywords : erbium * wavelength division multiplexing * optical fibre amplifiers * optical fibre communication Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.004, year: 2001

  4. Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field.

    Science.gov (United States)

    Tian, Xiaoqing; Xu, Jianbin; Wang, Xiaomu

    2010-09-09

    The band gap opening of bilayer graphene with one side surface adsorption of F4-TCNQ is reported. F4-TCNQ doped bilayer graphene shows p-type semiconductor characteristics. With a F4-TCNQ concentration of 1.3 x 10(-10) mol/cm(2), the charge transfer between each F4-TCNQ molecule and graphene is 0.45e, and the built-in electric field, E(bi), between the graphene layers could reach 0.070 V/A. The charge transfer and band gap opening of the F4-TCNQ-doped graphene can be further modulated by an externally applied electric field (E(ext)). At 0.077 V/A, the gap opening at the Dirac point (K), DeltaE(K) = 306 meV, and the band gap, E(g) = 253 meV, are around 71% and 49% larger than those of the pristine bilayer under the same E(ext).

  5. Wide frequency independently controlled dual-band inkjet-printed antenna

    KAUST Repository

    AbuTarboush, Hattan F.; Shamim, Atif

    2014-01-01

    .2 and 23.7%, respectively. These dual-bands have the ability to be controlled independently between 1.1 and 7.5 GHz without affecting the other band. In addition, the proposed antenna can be assigned for different mobile and wireless applications

  6. Variation in band gap energy and electrical analysis of double doped cobalt ferrite

    Science.gov (United States)

    Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

    2018-05-01

    The Ca and Cr doped cobalt ferrite nanoparticles (Co0.9Ca0.1) (Fe0.8 Cr0.2)2O4 were synthesized by microwave gel combustion method. Microstructural studies were carried out by XRD and SEM. Structural studies suggest that the crystal system remains spinal even with the doping of calcium and chromium. The SEM image shows the spherical morphology of surface of the sample. Optical properties of Ca and Cr doped cobalt ferrite were studied by UV-visible technique in the range of 400-600 nm. The electrical conductivity of pure and doped cobalt ferrite were studied as a function of frequency and were explained on the basis of electron hopping.

  7. Calculations of Energy Shift of the Conduction Band-Edge in Doped and Compensated GaP

    OpenAIRE

    Endo, Tamio; Itoh, Nobuhiko; Okino, Yasushi; 遠藤, 民生; 伊藤, 伸彦; 沖野, 祥[他

    1989-01-01

    The energy shifts of the parabolic conduction band-edge at 77 and 300K with doping the Te-donor in GaP were calculated in the nondegenerate system for the two cases ; unintentional and intentional compensations, using the two models proposed by Hwang abd by Mahan. The total parabolic shift △EM(△EH), and the contributions of the exchangeinteraction △μex(△Ee) and of the Coulomb interaction △μed(△Ec) calculated by the Mahan's model (Hwang's model), increase with increasing donor concentration in...

  8. Impulse radio ultra wide-band over multi-mode fiber for in-home signal distribution

    DEFF Research Database (Denmark)

    Caballero Jambrina, Antonio; Rodes, Roberto; Jensen, Jesper Bevensee

    2009-01-01

    We propose and experimentally demonstrate a high speed impulse radio ultra wide-band (IR-UWB) wireless link for in-home network signal distribution. The IR-UWB pulse is distributed over a multimode fiber to the transmitter antenna. Wireless transmitted bit-rates of 1 Gbps at 2 m and 2 Gbps at 1.5 m...

  9. Generation of three wide frequency bands within a single white-light cavity

    Science.gov (United States)

    Othman, Anas; Yevick, David; Al-Amri, M.

    2018-04-01

    We theoretically investigate the double-Λ scheme inside a Fabry-Pérot cavity employing a weak probe beam and two strong driving fields together with an incoherent pumping mechanism. By generating analytical expressions for the susceptibility and applying the white-light cavity conditions, we devise a procedure that reaches the white-light condition at a smaller gas density than the values typically cited in similar previous studies. Further, when the intensities of the two driving fields are equal, a single giant white band is obtained, while for unequal driving fields three white bands can be present in the cavity. Two additional techniques are then advanced for generating three white bands and a method is described for displacing the center frequency of the bands. Finally, some potential applications are suggested.

  10. High damping properties of magnetic particles doped rubber composites at wide frequency

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Ye, E-mail: schtiany@163.com [Research Center for Engineering Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan 030051 (China); College of Material Science and Engineering, North University of China, Taiyuan 030051 (China); Liu, Yaqing, E-mail: lyq@nuc.edu.cn [Research Center for Engineering Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan 030051 (China); College of Material Science and Engineering, North University of China, Taiyuan 030051 (China); He, Minhong; Zhao, Guizhe; Sun, Youyi [Research Center for Engineering Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan 030051 (China); College of Material Science and Engineering, North University of China, Taiyuan 030051 (China)

    2013-05-15

    Highlights: ► A new kind of permanent magnetic rubber was prepared. ► The microstructure and magnetic properties were investigated. ► The mechanical and damping properties were discussed. ► The new material is expected to be an isolator material to a changed frequency. - Abstract: A new kind of rubber composite was prepared by doping SrFe{sub 12}O{sub 19} nanoparticles coated with silane coupling agents (Si-69) into nitrile butadiene rubber (NBR) matrix, which was characterized by the scanning electron microscopy and X-ray spectroscopy. The results showed that the SrFe{sub 12}O{sub 19} nanoparticles were well dispersed in rubber matrix. Furthermore, the mechanical and magnetic properties of the rubber composites were investigated, in which the high tensile strength (15.8 MPa) and high saturation magnetization (22.9 emu/g) were observed. What is more, the high loss factor of the rubber composites was also obtained in a wide frequency range (0–100 Hz) at high loading (80 phr). The result is attributed to that the permanent magnetic field in rubber nanocomposites can absorb shock energy. These results indicate that the new kind of permanent magnetic rubber is expected to be a smart isolator material, in which the isolator will be able to adapt to a changed frequency.

  11. A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

    Science.gov (United States)

    Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

    2013-01-01

    The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

  12. Arterial indices and serum cystatin C level in individuals with occupational wide band noise exposure

    Directory of Open Access Journals (Sweden)

    Ali R Khoshdel

    2016-01-01

    Full Text Available Background: Chronic exposure to noise is known to cause a wide range of health problems including extracellular matrix (ECM proliferation and involvement of cardiovascular system. There are a few studies to investigate noise-induced vascular changes using noninvasive methods. In this study we used carotid artery intima-media thickness (CIMT and aortic augmentation as indices of arterial properties and cystatin C as a serum biomarker relating to ECM metabolism. Materials and Methods: Ninety-three male participants were included in this study from aeronautic technicians: 39 with and 54 without a history of wide band noise (WBN exposure. For better discrimination, the participants were divided into the two age groups: 40 years old. Adjusted aortic augmentation index (AI for a heart rate equal to 75 beats per minute (AIx@HR75 were calculated using pulse wave analysis (PWA. CIMT was measured in 54 participants who accepted to undergo Doppler ultrasonography. Serum cystatin C was also measured. Results: Among younger individuals the mean CIMT was 0.85 ± 0.09 mm and 0.75 ± 0.22 mm in the in the exposed and the control groups respectively. Among older individuals CIMT had a mean of 1.04 ± 0.22 mm vs. 1.00 ± 0.25 mm for the exposed vs. the control group. However, in both age groups the difference was not significant at the 0.05 level. A comparison of AIx@HR75 between exposure group and control group both in younger age group (5.46 ± 11.22 vs. 8.56 ± 8.66 and older age group (17.55 ± 10.07 vs. 16.61 ± 5.77 revealed no significant difference. We did not find any significant correlation between CIMT and AIx@HR75 in exposed group (r = 0.314, P value = 0.145 but the correlation was significant in control group (r = 0.455, P value = 0.019. Serum cystatin C level was significantly lower in individuals with WBN exposure compared to controls (441.10 ± 104.70 ng/L vs. 616.89 ± 136.14, P

  13. Performance analysis for a chaos-based code-division multiple access system in wide-band channel

    Directory of Open Access Journals (Sweden)

    Ciprian Doru Giurcăneanu

    2015-08-01

    Full Text Available Code-division multiple access technology is widely used in telecommunications and its performance has been extensively investigated in the past. Theoretical results for the case of wide-band transmission channel were not available until recently. The novel formulae which have been published in 2014 can have an important impact on the future of wireless multiuser communications, but limitations come from the Gaussian approximations used in their derivation. In this Letter, the authors obtain more accurate expressions of the bit error rate (BER for the case when the model of the wide-band channel is two-ray, with Rayleigh fading. In the authors’ approach, the spreading sequences are assumed to be generated by logistic map given by Chebyshev polynomial function of order two. Their theoretical and experimental results show clearly that the previous results on BER, which rely on the crude Gaussian approximation, are over-pessimistic.

  14. Implementation and Investigation of a Compact Circular Wide Slot UWB Antenna with Dual Notched Band Characteristics using Stepped Impedance Resonators

    Directory of Open Access Journals (Sweden)

    Yingsong Li

    2012-04-01

    Full Text Available A coplanar waveguide (CPW fed ultra-wideband (UWB antenna with dual notched band characteristics is presented in this paper. The circular wide slot and circular radiation patch are utilized to broaden the impedance bandwidth of the UWB antenna. The dual notched band functions are achieved by employing two stepped impedance resonators (SIRs which etched on the circular radiation patch and CPW excitation line, respectively. The two notched bands can be controlled by adjusting the dimensions of the two stepped impedance resonators which give tunable notched band functions. The proposed dual notched band UWB antenna has been designed in details and optimized by means of HFSS. Experimental and numerical results show that the proposed antenna with compact size of 32 × 24 mm2, has an impedance bandwidth range from 2.8 GHz to 13.5 Hz for voltage standing-wave ratio (VSWR less than 2, except the notch bands 5.0 GHz - 6.2 GHz for HIPERLAN/2 and IEEE 802.11a (5.1 GHz - 5.9 GHz and 8.0 GHz - 9.3 GHz for satellite and military applications.

  15. Low cost and thin metasurface for ultra wide band and wide angle polarization insensitive radar cross section reduction

    Science.gov (United States)

    Ameri, Edris; Esmaeli, Seyed Hassan; Sedighy, Seyed Hassan

    2018-05-01

    A planar low cost and thin metasurface is proposed to achieve ultra-wideband radar cross section (RCS) reduction with stable performance with respect to polarization and incident angles. This metasurface is composed of two different artificial magnetic conductor unit cells arranged in a chessboard like configuration. These unit cells have a Jerusalem cross pattern with different thicknesses, which results in wideband out-phase reflection and RCS reduction, consequently. The designed metasurface reduces RCS more than 10-dB from 13.6 GHz to 45.5 GHz (108% bandwidth) and more than 20-dB RCS from 15.2 GHz to 43.6 GHz (96.6%). Moreover, the 10-dB RCS reduction bandwidth is very stable (more than 107%) for both TE and TM polarizations. The good agreement between simulations and measurement results proves the design, properly. The ultra-wide bandwidth, low cost, low profile, and stable performance of this metasurface prove its high capability compared with the state-of-the-art references.

  16. Band structure of one-dimensional doped photonic crystal with three level atoms using the Fresnel coefficients method

    Science.gov (United States)

    Jafari, A.; Rahmat, A.; Bakkeshizadeh, S.

    2018-01-01

    We consider a one-dimensional photonic crystal (1DPC) composed of double-layered dielectrics. Electric permittivity and magnetic permeability of this crystal depends on the incident electromagnetic wave frequency. We suppose that three level atoms have been added to the second layer of each dielectric and this photonic crystal (PC) has been doped. These atoms can be added to the layer with different rates. In this paper, we have calculated and compared the band structure of the mentioned PC considering the effect of added atoms to the second layer with different rates through the Fresnel coefficients method. We find out that according to the effective medium theory, the electric permittivity of the second layer changes. Also the band structure of PC for both TE and TM polarizations changes, too. The width of bandgaps related to “zero averaged refractive index” and “Bragg” increases. Moreover, new gap branches appear in new frequencies at both TE and TM polarizations. In specific state, two branches of “zero permittivity” gap appear in the PC band structure related to TM polarization. With increasing the amount of the filling rate of total volume with three level atoms, we observe a lot of changes in the PC band structure.

  17. Body area networks using IEEE 802156 implementing the ultra wide band physical layer

    CERN Document Server

    Hernandez, Marco; Mucchi, Lorenzo

    2014-01-01

    The market of wearable wireless medical sensors is experiencing a rapid growth and the associated telecommunications services for the healthcare sector are forecast to further increase in the next years. Medical body area networks (MBANs) allow the mobility of patients and medical personnel by facilitating the remote monitoring of patients suffering from chronic or risky diseases. Currently, MBANs are being introduced in unlicensed frequency bands, where the risk of mutual interference with other electronic devices radiating in the same band can be high. Thus, coexistence is an issue on which

  18. A Differential 4-Path Highly Linear Widely Tunable On-Chip Band-Pass Filter

    NARCIS (Netherlands)

    Ghaffari, A.; Klumperink, Eric A.M.; Nauta, Bram

    2010-01-01

    Abstract A passive switched capacitor RF band-pass filter with clock controlled center frequency is realized in 65nm CMOS. An off-chip transformer which acts as a balun, improves filter-Q and realizes impedance matching. The differential architecture reduces clock-leakage and suppresses selectivity

  19. Secure Multi-Gigabit Ultra-Wide Band Communications for Personal Area Networks

    DEFF Research Database (Denmark)

    Vegas Olmos, Juan José; Puerta Ramírez, Rafael; Tafur Monroy, Idelfonso

    2016-01-01

    scenarios where the user may be located in public spaces. We propose to use Ultra-Wideband communications, which can be seamlessly transported over fiber or wireless, and show different transmission experiments ranging from 2 Gbit/s to 35 Gbit/s. To achieve these record bit rates, the multi-band approach...

  20. Optical selection rules and scattering processes in rocksalt wide band gap ZnO

    CSIR Research Space (South Africa)

    Kunert, HW

    2014-02-01

    Full Text Available is found far away from the center of the Brillouin zone (BZ) at high symmetry point L and line S, depending on the pressure. The unusual electronic band structure (EBS) of the R-ZnO leads to several direct and indirect optical transitions which find...

  1. Diffusivity-mobility relationship for heavily doped semiconductors exhibiting band tails

    International Nuclear Information System (INIS)

    Khan, Arif; Das, Atanu

    2010-01-01

    A relationship between the mobility and diffusivity of semiconductors exhibiting band tails has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors, and to semiconductors with and without band tails. It is suitable for studying electrical transport in these semiconductors.

  2. Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.

    Science.gov (United States)

    Zhang, S J; Lin, S S; Li, X Q; Liu, X Y; Wu, H A; Xu, W L; Wang, P; Wu, Z Q; Zhong, H K; Xu, Z J

    2016-01-07

    Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.

  3. Band gap narrowing and photocatalytic studies of Nd 3+ ion-doped

    Indian Academy of Sciences (India)

    Pure and Nd3+-doped tin oxide (SnO2) nanoparticles have been prepared by the sol–gel method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution TEM, energydispersive spectroscopy and UV–visible spectroscopy. The XRD patterns of all the samples are identified as ...

  4. Wide-band IR imaging in the NIR-MIR-FIR regions for in situ analysis of frescoes

    Science.gov (United States)

    Daffara, C.; Pezzati, L.; Ambrosini, D.; Paoletti, D.; Di Biase, R.; Mariotti, P. I.; Frosinini, C.

    2011-06-01

    Imaging methods offer several advantages in the field of conservation allowing to perform non-invasive inspection of works of art. In particular, non-invasive techniques based on imaging in different infrared (IR) regions are widely used for the investigation of paintings. Using radiation beyond the visible range, different characteristics of the inspected artwork may be revealed according to the bandwidth acquired. In this paper we present the recent results of a joint project among the two research institutes DIMEG and CNR-INO, and the restoration facility Opificio delle Pietre Dure, concerning the wide-band integration of IR imaging techniques, in the spectral ranges NIR 0.8-2.5 μm, MIR 3-5 μm, and FIR 8-12 μm, for in situ analysis of artworks. A joint, multi-mode use of reflection and thermal bands is proposed for the diagnostics of mural paintings, and it is demonstrated to be an effective tool in inspecting the layered structure. High resolution IR reflectography and, to a greater extent, IR imaging in the 3-5 μm band, are effectively used to characterize the superficial layer of the fresco and to analyze the stratigraphy of different pictorial layers. IR thermography in the 8-12 μm band is used to characterize the support deep structure. The integration of all the data provides a multi- layered and multi-spectral representation of the fresco that yields a comprehensive analysis.

  5. Raman scattering and band-gap variations of Al-doped ZnO nanoparticles synthesized by a chemical colloid process

    International Nuclear Information System (INIS)

    Lo, Shih-Shou; Huang, Dison; Tu, Chun Hsiang; Hou, Chia-Hung; Chen, Chii-Chang

    2009-01-01

    This study synthesizes Al-doped ZnO (AZO) nanoparticles using a chemical colloid process. Raman scattering analysis shows that Al doping increases the lattice defects and induces Raman vibration modes of 651 cm -1 . The Raman shift of the active mode E 2 (high) of AZO nanoparticles shows the presence and increase in the stress in nanoparticles when the Al dopant concentration increases. Room-temperature photoluminescence (RT-PL) spectra of synthesized AZO nanoparticles exhibit strong UV emissions near the band edges. The RT-PL peak shifts to a higher photon energy region as the Al concentration increases, indicating a broadening of the band gap.

  6. Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-09-30

    The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.

  7. Single-mode optical fiber design with wide-band ultra low bending-loss for FTTH application.

    Science.gov (United States)

    Watekar, Pramod R; Ju, Seongmin; Han, Won-Taek

    2008-01-21

    We propose a new design of a single-mode optical fiber (SMF) which exhibits ultra low bend sensitivity over a wide communication band (1.3 microm to 1.65 microm). A five-cladding fiber structure has been proposed to minimize the bending loss, estimated to be as low as 4.4x10(-10) dB/turn for the bend radius of 10 mm.

  8. Investigation on wide-band scattering of a 2-D target above 1-D randomly rough surface by FDTD method.

    Science.gov (United States)

    Li, Juan; Guo, Li-Xin; Jiao, Yong-Chang; Li, Ke

    2011-01-17

    Finite-difference time-domain (FDTD) algorithm with a pulse wave excitation is used to investigate the wide-band composite scattering from a two-dimensional(2-D) infinitely long target with arbitrary cross section located above a one-dimensional(1-D) randomly rough surface. The FDTD calculation is performed with a pulse wave incidence, and the 2-D representative time-domain scattered field in the far zone is obtained directly by extrapolating the currently calculated data on the output boundary. Then the 2-D wide-band scattering result is acquired by transforming the representative time-domain field to the frequency domain with a Fourier transform. Taking the composite scattering of an infinitely long cylinder above rough surface as an example, the wide-band response in the far zone by FDTD with the pulsed excitation is computed and it shows a good agreement with the numerical result by FDTD with the sinusoidal illumination. Finally, the normalized radar cross section (NRCS) from a 2-D target above 1-D rough surface versus the incident frequency, and the representative scattered fields in the far zone versus the time are analyzed in detail.

  9. [The effect of technological parameters of wide-band laser cladding on microstructure and sinterability of gradient bioceramics composite coating].

    Science.gov (United States)

    Liu, Qibin; Zhu, Weidong; Zou, Longjiang; Zheng, Min; Dong, Chuang

    2005-12-01

    The gradient bioceramics coating was prepared on the surface of Ti-6Al-4V alloy by using wide-band laser cladding. And the effect of technological parameters of wide-band laser cladding on microstructure and sinterability of gradient bioceramics composite coating was studied. The experimental results indicated that in the circumstances of size of laser doze D and scanning velocity V being fixed, with the increasement of power P, the density of microstructure in bioceramics coating gradually degraded; with the increasement of power P, the pore rate of bioceramics gradually became high. While P = 2.3 KW, the bioceramics coating with dense structure and lower pore rate (5.11%) was obtained; while P = 2.9 KW, the bioceramics coating with disappointing density was formed and its pore rate was up to 21.32%. The microhardness of bioceramics coating demonstrated that while P = 2.3 KW, the largest value of microhardness of bioceramics coating was 1100 HV. Under the condition of our research work, the optimum technological parameters for preparing gradient bioceramics coating by wide-band laser cladding are: P = 2.3 KW, V = 145 mm/min, D = 16 mm x 2 mm.

  10. Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

    Science.gov (United States)

    Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

    2015-09-01

    Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

  11. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.; Franklin, J. B.; Ryan, M. P.; Lee, J.-S.; Ohldag, Hendrik; McLachlan, M. A.; Alford, N. M.; Roqan, Iman S.

    2015-01-01

    . %) at low oxygen deposition pressure (<25 mTorr) were ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency

  12. Valence band states in Si-based p-type delta-doped field effect transistors

    International Nuclear Information System (INIS)

    Martinez-Orozco, J C; Vlaev, Stoyan J

    2009-01-01

    We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  13. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  14. Investigation on cored-eutectic structure in Ni60/WC composite coatings fabricated by wide-band laser cladding

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Qunshuang, E-mail: maqunshuang@126.com; Li, Yajiang, E-mail: yajli@sdu.edu.cn; Wang, Juan, E-mail: jwang@sdu.edu.cn; Liu, Kun, E-mail: liu_kun@163.com

    2015-10-05

    Highlights: • Perfect composite coatings were fabricated using wide-band laser cladding. • Special cored-eutectic structure was synthesized in Ni60/WC composite coatings. • Cored-eutectic consists of hard carbide compounds and fine lamellar eutectic of M{sub 23}C{sub 6} carbides and γ-Ni(Fe). • Wear resistance of coating layer was significantly improved due to precipitation of M{sub 23}C{sub 6} carbides. - Abstract: Ni60 composite coatings reinforced with WC particles were fabricated on the surface of Q550 steel using LDF4000-100 fiber laser device. The wide-band laser and circular beam laser used in laser cladding were obtained by optical lens. Microstructure, elemental distribution, phase constitution and wear properties of different composite coatings were investigated. The results showed that WC particles were partly dissolved under the effect of wide-band fiber laser irradiation. A special cored-eutectic structure was synthesized due to dissolution of WC particles. According to EDS and XRD results, the inside cores were confirmed as carbides of M{sub 23}C{sub 6} enriched in Cr, W and Fe. These complex carbides were primarily separated out in the molten metal when solidification started. Eutectic structure composed of M{sub 23}C{sub 6} carbides and γ-Ni(Fe) grew around carbides when cooling. Element content of Cr and W is lower at the bottom of cladding layer. In consequence, the eutectic structure formed in this region did not have inside carbides. The coatings made by circular laser beam were composed of dendritic matrix and interdendritic eutectic carbides, lacking of block carbides. Compared to coatings made by circular laser spot, the cored-eutectic structure formed in wide-band coatings had advantages of well-distribution and tight binding with matrix. The uniform power density and energy distribution and the weak liquid convection in molten pool lead to the unique microstructure evolution in composite coatings made by wide-band laser

  15. Lanthanide 4f-electron binding energies and the nephelauxetic effect in wide band gap compounds

    International Nuclear Information System (INIS)

    Dorenbos, Pieter

    2013-01-01

    Employing data from luminescence spectroscopy, the inter 4f-electron Coulomb repulsion energy U(6, A) in Eu 2+/3+ impurities together with the 5d-centroid energy shift ϵ c (1,3+,A) in Ce 3+ impurities in 40 different fluoride, chloride, bromide, iodide, oxide, sulfide, and nitride compounds has been determined. This work demonstrates that the chemical environment A affects the two energies in a similar fashion; a fashion that follows the anion nephelauxetic sequence F, O, Cl, Br, N, I, S, Se. One may then calculate U(6, A) from well established and accurate ϵ c (1,3+,A) values which are then used as input to the chemical shift model proposed in Dorenbos (2012) [19]. As output it provides the chemical shift of 4f-electron binding energy and therewith the 4f-electron binding energy relative to the vacuum energy. In addition this method provides a tool to routinely establish the binding energy of electrons at the top of the valence band (work function) and the bottom of the conduction band (electron affinity) throughout the entire family of inorganic compounds. How the electronic structure of the compound and lanthanide impurities therein change with type of compound and type of lanthanide is demonstrated. -- Highlights: ► A relationship between 5d centroid shift and 4f-electron Coulomb repulsion energy is established. ► Information on the absolute 4f-electron binding energy of lanthanides in 40 compounds is provided. ► A new tool to determine absolute binding energies of electrons in valence and conduction bands is demonstrated

  16. Phosphorescent Molecularly Doped Light-Emitting Diodes with Blended Polymer Host and Wide Emission Spectra

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2013-01-01

    Full Text Available Stable green light emission and high efficiency organic devices with three polymer layers were fabricated using bis[2-(4′-tert-butylphenyl-1-phenyl-1H-benzoimidazole-N,C2′] iridium(III (acetylacetonate doped in blended host materials. The 1 wt% doping concentration showed maximum luminance of 7841 cd/cm2 at 25.6 V and maximum current efficiency of 9.95 cd/A at 17.2 V. The electroluminescence spectra of devices indicated two main peaks at 522 nm and 554 nm coming from phosphor dye and a full width at half maximum (FWHM of 116 nm. The characteristics of using blended host, doping iridium complex, emission spectrum, and power efficiency of organic devices were investigated.

  17. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  18. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  19. The Fermi surface and band folding in La{sub 2-x}Sr{sub x}CuO{sub 4}, probed by angle-resolved photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Razzoli, E; Radovic, M; Patthey, L; Shi, M [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Sassa, Y; Chang, J [Laboratory for Neutron Scattering, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Drachuck, G; Keren, A; Shay, M [Department of Physics, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Maansson, M; Mesot, J [Laboratory for Synchrotron and Neutron Spectroscopy, EPF Lausanne, CH-1015 Lausanne (Switzerland); Berntsen, M H; Tjernberg, O [Materials Physics, KTH Royal Institute of Technology, S-16440 Kista (Sweden); Pailhes, S [CEA, CNRS, CE Saclay, Laboratoire Leon Brillouin, F-91191 Gif Sur Yvette (France); Momono, N [Department of Applied Sciences, Muroran Institute of Technology, Muroran 050-8585 (Japan); Oda, M; Ido, M [Department of Physics, Hokkaido University, Sapporo 060-0810 (Japan); Lipscombe, O J; Hayden, S M, E-mail: ming.shi@psi.c [H H Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)

    2010-12-15

    A systematic angle-resolved photoemission study of the electronic structure of La{sub 2-x}Sr{sub x}CuO{sub 4} in a wide doping range is presented in this paper. In addition to the main energy band, we observed a weaker additional band, the ({pi}, {pi}) folded band, which shows unusual doping dependence. The appearance of the folded band suggests that a Fermi surface reconstruction is doping dependent and could already occur at zero magnetic field.

  20. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  1. Effects of Calcination Holding Time on Properties of Wide Band Gap Willemite Semiconductor Nanoparticles by the Polymer Thermal Treatment Method

    Directory of Open Access Journals (Sweden)

    Ibrahim Mustapha Alibe

    2018-04-01

    Full Text Available Willemite is a wide band gap semiconductor used in modern day technology for optoelectronics application. In this study, a new simple technique with less energy consumption is proposed. Willemite nanoparticles (NPs were produced via a water–based solution consisting of a metallic precursor, polyvinylpyrrolidone (PVP, and underwent a calcination process at 900 °C for several holding times between 1–4 h. The FT–IR and Raman spectra indicated the presence of metal oxide bands as well as the effective removal of PVP. The degree of the crystallization and formation of the NPs were determined by XRD. The mean crystallite size of the NPs was between 18.23–27.40 nm. The morphology, particle shape and size distribution were viewed with HR-TEM and FESEM analysis. The willemite NPs aggregate from the smaller to larger particles with an increase in calcination holding time from 1–4 h with the sizes ranging between 19.74–29.71 nm. The energy values obtained from the experimental band gap decreased with increasing the holding time over the range of 5.39 eV at 1 h to at 5.27 at 4 h. These values match well with band gap obtained from the Mott and Davis model for direct transition. The findings in this study are very promising and can justify the use of these novel materials as a potential candidate for green luminescent optoelectronic applications.

  2. Theoretical modelling of intermediate band solar cell materials based on metal-doped chalcopyrite compounds

    International Nuclear Information System (INIS)

    Palacios, P.; Sanchez, K.; Conesa, J.C.; Fernandez, J.J.; Wahnon, P.

    2007-01-01

    Electronic structure calculations are carried out for CuGaS 2 partially substituted with Ti, V, Cr or Mn to ascertain if some of these systems could provide an intermediate band material able to give a high efficiency photovoltaic cell. Trends in electronic level positions are analyzed and more accurate advanced theory levels (exact exchange or Hubbard-type methods) are used in some cases. The Ti-substituted system seems more likely to yield an intermediate band material with the desired properties, and furthermore seems realizable from the thermodynamic point of view, while those with Cr and Mn might give half-metal structures with applications in spintronics

  3. Theoretical modelling of intermediate band solar cell materials based on metal-doped chalcopyrite compounds

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, P [Instituto de Energia Solar and Dpt. de Tecnologias Especiales, ETSI de Telecomunicacion, UPM, Ciudad Universitaria s/n, 28040 Madrid (Spain); Sanchez, K [Instituto de Energia Solar and Dpt. de Tecnologias Especiales, ETSI de Telecomunicacion, UPM, Ciudad Universitaria s/n, 28040 Madrid (Spain); Conesa, J C [Instituto de Catalisis y Petroleoquimica, CSIC, Marie Curie 2, Cantoblanco, 28049 Madrid (Spain); Fernandez, J J [Dpt. de Fisica Fundamental, Universidad Nacional de Educacion a Distancia, 28080, Madrid (Spain); Wahnon, P [Instituto de Energia Solar and Dpt. de Tecnologias Especiales, ETSI de Telecomunicacion, UPM, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2007-05-31

    Electronic structure calculations are carried out for CuGaS{sub 2} partially substituted with Ti, V, Cr or Mn to ascertain if some of these systems could provide an intermediate band material able to give a high efficiency photovoltaic cell. Trends in electronic level positions are analyzed and more accurate advanced theory levels (exact exchange or Hubbard-type methods) are used in some cases. The Ti-substituted system seems more likely to yield an intermediate band material with the desired properties, and furthermore seems realizable from the thermodynamic point of view, while those with Cr and Mn might give half-metal structures with applications in spintronics.

  4. Gamma ray irradiation induced optical band gap variations in silica sol-gel doped sucrose

    International Nuclear Information System (INIS)

    Marzouki, F.; Farah, K.; Hamzaoui, A.H; Ben Ouada, H

    2015-01-01

    The silica xerogels doped sucrose was prepared via sol-gel process and exposed at room temperature to different doses of high energy ("6"0Co) gamma irradiation. Changes in the UV-visible and FTIR spectra of pristine and irradiated xerogels with varying of gamma doses rays show variation in the gap energy. It was found that energy gap of the investigated silica xerogels decreases with increasing the gamma irradiation doses. Thereby the irradiated samples reveal behaviour changes, from an insulator (Eg ∼5,8 eV) towards a semiconductor with (Eg ∼ 3.5 eV).

  5. The design of high-efficiency and wide-band ultrasonic transducers for immersion application

    International Nuclear Information System (INIS)

    Choi, Myung Sun; Kim, Jin Ho; Kang, Eun Kyung

    2001-01-01

    The optimum design of low-loss and broad-band piezoelectric ultrasonic transducers has been performed for immersion application. In order to obtain the highest efficiency, the piezo plates are backed by air. After determining the matching layers by using the formulas proposed by Desilet et al., inserting both a series inductor and a series or parallel resistor was considerated such that the transducers are electrically matched to the voltage source at the free resonance frequency. By analysing the transfer functions and the time responses of the transducers numerically, it has been shown that the frequency bandwidth becomes broad with increasing the electro-mechanical coupling factor and the number of matching layers, and that the sensitivity becomes best as the motional resistance at the resonance frequency is equal to the voltage source resistance.

  6. A wide band slot-coupled beam sensing electrode for the advanced light source

    International Nuclear Information System (INIS)

    Hinkson, J.; Rex, K.

    1991-05-01

    Stripline electrodes (traveling wave electrodes, directional couplers) are commonly used in particle accelerators as beam pickups and kickers. The longitudinally symmetric stripline has a constant beam coupling impedance as a function of length and has a characteristic magnitude sin(x) amplitude response in the frequency domain. An experimentally tapered stripline provides nearly constant coupling impedance vs. frequency and yields superior frequency-domain performance. In practice it is difficult to construct either of these devices for broad-band performance because of the transition from coaxial to stripline geometry. We report on the construction of an exponentially-tapered, slot-coupled ''stripline'' which was relatively easy to construct and has the desired frequency response. 2 refs., 6 figs

  7. Highly sensitive PMOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane

    Science.gov (United States)

    Chen, Yung Ting; Chen, Yang Fang

    2010-03-01

    A new approach for developing highly sensitive PMOS photodetector based on the assistance of AAO membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the PMOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Notably, the response at the optical communication wavelength of 850 nm can reach up to 0.24 A/W with an external quantum efficiency of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5 V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

  8. Connected phased array antennas for ultra-wide band radar applications

    NARCIS (Netherlands)

    Cavallo, D.; Neto, A.; Gerini, G.

    2008-01-01

    The constantly increasing demand of advanced sensors and communications systems aboard of military platforms (ships, UAVs, aircraft, land vehicles, etc.) requires a high number of antennas, covering a very wide frequency spectrum. An interesting and significant example is given by typical RF

  9. High gain L-band erbium-doped fiber amplifier with two-stage ...

    Indian Academy of Sciences (India)

    One of the key technologies to increase the bandwidth of optical communication systems is to expand ... plexing (WDM) transmission system is very attractive because the system capacity can be doubled by placing .... an important role in the development of practical L-band EDFA from the perspective of economical usage ...

  10. Development of wide band digital receiver for atmospheric radars using COTS board based SDR

    Science.gov (United States)

    Yasodha, Polisetti; Jayaraman, Achuthan; Thriveni, A.

    2016-07-01

    Digital receiver extracts the received echo signal information, and is a potential subsystem for atmospheric radar, also referred to as wind profiling radar (WPR), which provides the vertical profiles of 3-dimensional wind vector in the atmosphere. This paper presents the development of digital receiver using COTS board based Software Defined Radio technique, which can be used for atmospheric radars. The developmental work is being carried out at National Atmospheric Research Laboratory (NARL), Gadanki. The digital receiver consists of a commercially available software defined radio (SDR) board called as universal software radio peripheral B210 (USRP B210) and a personal computer. USRP B210 operates over a wider frequency range from 70 MHz to 6 GHz and hence can be used for variety of radars like Doppler weather radars operating in S/C bands, in addition to wind profiling radars operating in VHF, UHF and L bands. Due to the flexibility and re-configurability of SDR, where the component functionalities are implemented in software, it is easy to modify the software to receive the echoes and process them as per the requirement suitable for the type of the radar intended. Hence, USRP B210 board along with the computer forms a versatile digital receiver from 70 MHz to 6 GHz. It has an inbuilt direct conversion transceiver with two transmit and two receive channels, which can be operated in fully coherent 2x2 MIMO fashion and thus it can be used as a two channel receiver. Multiple USRP B210 boards can be synchronized using the pulse per second (PPS) input provided on the board, to configure multi-channel digital receiver system. RF gain of the transceiver can be varied from 0 to 70 dB. The board can be controlled from the computer via USB 3.0 interface through USRP hardware driver (UHD), which is an open source cross platform driver. The USRP B210 board is connected to the personal computer through USB 3.0. Reference (10 MHz) clock signal from the radar master oscillator

  11. Fabrication and characterization of wide band AE sensors for quantitative detection of displacement and velocity

    International Nuclear Information System (INIS)

    Kim, Byung G.; Kim, Young Hwan

    1992-01-01

    Acoustic emission sensors to show a flat response for displacement and velocity of a specimen surface in a wide frequency were fabricated. The sensors were conical sensors employing conical type piezoelectric elements and a PVDF sensor employing PVDF piezoelctric polymer. The transient outputs of the sensors due to step-like forces and their sensitivity spectrum were measured. The results were compared with the theoretical displacement and velocity signals calculated using Green's function and a simulated ramp force. The sensor outputs and the theoretical signals were consistent with each other. The sensors showed flat sensitivity spectra in the wide frequency range. The present work showed that conical PZT sensors are suited for the direct measurement of vertical displacement, and PVDF sensors for that of the vertical velocity of a plate surface.

  12. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    OpenAIRE

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2012-01-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefe...

  13. Nanomaterial Host Bands Effect on the Photoluminescence Properties of Ce-Doped YAG Nanophosphor Synthesized by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    L. Guerbous

    2015-01-01

    Full Text Available Cerium trivalent (Ce3+ doped YAG nano-sized phosphors have been successfully synthesized by sol-gel method using different annealing temperatures. The samples have been characterized by X-ray diffraction (XRD, thermogravimetry (TG, differential scanning calorimetry (DSC analysis, Fourier transform infrared (FTIR spectroscopy, and steady photoluminescence (PL spectroscopy. X-ray diffraction analysis indicates that the pure cubic phase YAG was formed and strongly depends on the cerium content and the annealing temperature. It was found that the grain size ranges from 30 to 58 nm depending on the calcination temperature. The YAG: Ce nanophosphors showed intense, green-yellow emission, corresponding to Ce3+ 5d1→2F5/2, 2F7/2 transitions and its photoluminescence excitation spectrum contains the two Ce3+ 4f1→5d1, 5d2 bands. The crystal filed splitting energy levels positions 5d1 and 5d2 and the emission transitions blue shift with annealing temperatures have been discussed. It was found that the Ce3+ 4f1 ground state position relative to valence band maximum of YAG host nanomaterial decreases with increasing the temperature.

  14. Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

    Science.gov (United States)

    Zhang, S. J.; Lin, S. S.; Li, X. Q.; Liu, X. Y.; Wu, H. A.; Xu, W. L.; Wang, P.; Wu, Z. Q.; Zhong, H. K.; Xu, Z. J.

    2015-12-01

    Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron

  15. Ultra-small (r1 year) copper oxide quantum dots with wide band gap

    Science.gov (United States)

    Talluri, Bhusankar; Prasad, Edamana; Thomas, Tiju

    2018-01-01

    Practical use of quantum dots (QDs) will rely on processes that enable (i) monodispersity, (ii) scalability, (iii) green approaches to manufacturing them. We demonstrate, a green, rapid, soft chemical, and industrial viable approach for obtaining quasi-spherical, ultra-small (size ∼2.4 ± 0.5 nm), stable (>1 yr), and monodispersed copper oxide QDs (r gap (Eg∼5.3 eV), this substantial band gap increase is currently inexplicable using Brus' equation, and is likely due to surface chemistry of these strongly confined QDs. Capping with triethanolamine (TEA) results in reduction in the average particle diameter from 9 ± 4 nm to 2.4 ± 0.5 nm and an increase of zeta potential (ξ) from +12 ± 2 mV to +31 ± 2 mV. XPS and electron diffraction studies indicate that capped copper oxide QDs which have TEA chemisorbed on its surface are expected to partly stabilize Cu (I) resulting in mixed phase in these QDs. This result is likely to inform efforts that involve achieving monodisperse microstructures and nano-structures, of oxides with a tendency for multivalency.

  16. Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

    Science.gov (United States)

    Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

    2010-01-04

    A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

  17. Characterization of M-type barium hexagonal ferrite-based wide band microwave absorber

    Science.gov (United States)

    Meshram, M. R.; Agrawal, Nawal K.; Sinha, Bharoti; Misra, P. S.

    2004-05-01

    This paper present the design, development and characterization of the hexagonal ferrite powder [BaCo 0.5δTi 0.5δMn 0.1Fe (11.87-δ)O 19] and [Ba(MnTi) δFe (12-2δ)O 19] at δ=1.6 as a microwave absorber. The hexagonal ferrite powder has been developed by dry attrition and sintering procedure. The developed ferrite powder 60% by weight has been mixed in epoxy resin to form a microwave-absorbing paint. This paint was coated on a conducting aluminum sheet to study the absorption characteristics of a linearly polarized TE wave at X band. The results for single- and two-layer microwave absorbers for different coating thicknesses have been reported. It has been found that it shows the broadband characteristics with minimum absorption of 8 dB from 8 to 12 GHz for a coating thickness of 2 mm.These paints are very useful in military applications such as RCS reduction, camouflaging of the target and prevention of EMI, etc.

  18. Characterization of M-type barium hexagonal ferrite-based wide band microwave absorber

    International Nuclear Information System (INIS)

    Meshram, M.R.; Agrawal, Nawal K.; Sinha, Bharoti; Misra, P.S.

    2004-01-01

    This paper present the design, development and characterization of the hexagonal ferrite powder [BaCo 0.5δ Ti 0.5δ Mn 0.1 Fe (11.87-δ) O 19 ] and [Ba(MnTi) δ Fe (12-2δ) O 19 ] at δ=1.6 as a microwave absorber. The hexagonal ferrite powder has been developed by dry attrition and sintering procedure. The developed ferrite powder 60% by weight has been mixed in epoxy resin to form a microwave-absorbing paint. This paint was coated on a conducting aluminum sheet to study the absorption characteristics of a linearly polarized TE wave at X band. The results for single- and two-layer microwave absorbers for different coating thicknesses have been reported. It has been found that it shows the broadband characteristics with minimum absorption of 8 dB from 8 to 12 GHz for a coating thickness of 2 mm.These paints are very useful in military applications such as RCS reduction, camouflaging of the target and prevention of EMI, etc

  19. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  20. Modelling and validation of a simple and compact wide upper stop band ultra-wideband bandpass filter

    Directory of Open Access Journals (Sweden)

    Somdotta Roy Choudhury

    2014-09-01

    Full Text Available A compact ultra-wideband (UWB bandpass filter (BPF is proposed based on end coupled microstrip transmission line, defected ground structure and defected microstrip structure. The experimental filter shows a fractional bandwidth of 110% at a centre frequency, with two observable transmission zeros (attenuation poles at 2.1 and 11.7 GHz. Measured results exhibit an UWB passband from 3.02 to 10.6 GHz with mid-band insertion loss of 1.8 dB and group delay variation <0.45 ns. The BPF achieves a wide stopband with < −18 dB attenuation up to 20 GHz.

  1. Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

    Science.gov (United States)

    Simons, Rainee N.; Goverdhanam, Kavita; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

    2001-01-01

    In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

  2. Instantaneous band gap collapse in VO{sub 2} caused by photocarrier doping

    Energy Technology Data Exchange (ETDEWEB)

    Herzog, Marc; Wegkamp, Daniel; Wolf, Martin; Staehler, Julia [Fritz-Haber-Institut der MPG, Berlin (Germany); Xian, Lede; Cudazzo, Pierluigi [Univ. del Pais Vasco, San Sebastian (Spain); European Theoretical Spectroscopy Facility (ETSF) (France); Gatti, Matteo [European Theoretical Spectroscopy Facility (ETSF) (France); Ecole Polytechnique, Palaiseau (France); McGahan, Christina L.; Marvel, Robert E.; Haglund, Richard F. [Vanderbilt Univ., Nashville, Tennessee (United States); Rubio, Angel [Fritz-Haber-Institut der MPG, Berlin (Germany); Univ. del Pais Vasco, San Sebastian (Spain); European Theoretical Spectroscopy Facility (ETSF) (France); MPI for the Structure and Dynamics of Matter, Hamburg (Germany)

    2015-07-01

    We have investigated the controversially discussed mechanism of the insulator-to-metal transition (IMT) in VO{sub 2} by means of femtosecond time-resolved photoelectron spectroscopy (trPES). Our data show that photoexcitation transforms insulating monoclinic VO{sub 2} quasi-instantaneously into a metal without an 80 fs structural bottleneck for the photoinduced electronic phase transition. First-principles many-body perturbation theory calculations reveal an ultrahigh sensitivity of the VO{sub 2} band gap to variations of the dynamically screened Coulomb interaction thus supporting the fully electronically driven isostructural IMT indicated by our trPES results. We conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening before significant hot-carrier relaxation or ionic motion has occurred.

  3. Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials

    Energy Technology Data Exchange (ETDEWEB)

    Dickinson, J. Thomas [Washington State Univ., Pullman, WA (United States)

    2014-04-05

    We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

  4. Investigation of Wide-FSR SOI Optical Filters Operating in C and L Bands

    Directory of Open Access Journals (Sweden)

    V. M. N. Passaro

    2012-06-01

    Full Text Available In this paper we present the investigation of optical filters based on triple ring resonator architectures in silicon-on-insulator technology. The generalized approach based on Mason’s rule and delay line signal processing has been implemented for modeling optical filters in Z-domain. A numerical investigation based on the coefficient map has been adopted for designing optical add-drop multiplexers with wide free spectral ranges, as large as 12 THz (~ 96 nm. Low crosstalk, of the order of -20 dB, has been numerically demonstrated in overall transmittances of optimized filters.

  5. High Efficiency Three-phase Power Factor Correction Rectifier using Wide Band-Gap Devices

    DEFF Research Database (Denmark)

    Kouchaki, Alireza

    Improving the conversion efficiency of power factor correction (PFC) rectifiers has become compelling due to their wide applications such as adjustable speed drives, uninterruptible power supplies (UPS), and battery chargers for electric vehicles (EVs). The attention to PFCs has increased even more....... Therefore, current controllers are also important to be investigated in this project. In this PhD research work, a comprehensive design of a two-level three-phase PFC rectifier using silicon-carbide (SiC) switches to achieve high efficiency is presented. The work is divided into two main parts: 1) Optimum...

  6. Intelligent Controller for a Compact Wide-Band Compositional Infrared Fourier Transform Spectrometer

    Science.gov (United States)

    Yiu, P.; Keymeulen, D.; Berisford, D. F.; Hand, K. P.; Carlson, R. W.

    2013-12-01

    This paper presents the design and integration of an intelligent controller for CIRIS (Compositional InfraRed Interferometric Spectrometer) on a stand-alone field programmable gate array (FPGA) architecture. CIRIS is a novel take on traditional Fourier Transform Spectrometers (FTS) and replaces linearly moving mirrors (characteristic of Michelson interferometers) with a constant-velocity rotating refractor to variably phase shift and alter the path length of incoming light. This design eliminates the need for periodically accelerating/decelerating mirrors inherent to canonical Michelson designs and allows for a compact and robust device that is intrinsically radiation-hard, making it ideal for spaceborne measurements in the near-IR to thermal-IR band (2-12 μm) on planetary exploration missions. A traditional Michelson FTS passes a monochromatic light source (incident light from the sample) through a system of refractors/mirrors followed by a mirror moving linearly in the plane of the incident light. This process selectively blocks certain wavelengths and permits measurement of the sample's absorption rates as a function of the wavelengths blocked to produce an 'inteferogram.' This is subsequently processed using a Fourier transform to obtain the sample's spectrum and ascertain the sample's composition. With our prototype CIRIS instrument in development at Design and Prototype Inc. and NASA-JPL, we propose the use of a rotating refractor spinning at a constant velocity to variably phase shift incident light to the detector as an alternative to a linearly moving mirror. This design eliminates sensitivity to vibrations, minimizing path length and non-linear errors due to minor perturbations to the system, in addition to facilitating compact design critical to meeting the strict volume requirements of spacecraft. Further, this is done without sacrificing spectral resolution or throughput when compared to Michelson or diffractive designs. While Michelson designs

  7. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  8. An ultrathin wide-band planar metamaterial absorber based on a fractal frequency selective surface and resistive film

    International Nuclear Information System (INIS)

    Fan Yue-Nong; Cheng Yong-Zhi; Nie Yan; Wang Xian; Gong Rong-Zhou

    2013-01-01

    We propose an ultrathin wide-band metamaterial absorber (MA) based on a Minkowski (MIK) fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz–20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields

  9. A New Wide Frequency Band Capacitance Transducer with Application to Measuring Metal Fill Time

    Directory of Open Access Journals (Sweden)

    Wael DEABES

    2009-01-01

    Full Text Available A novel low cost, high frequency circuit for measuring capacitance is proposed in this paper. This new capacitance measuring circuit is able to measure small coupling capacitance variations with high stray-immunity. Hence, it could be used in many potential applications such as measuring the metal fill time in the Lost Foam Casting (LFC process and Electrical Capacitive Tomography (ECT system. The proposed circuit is based on differential charging/discharging method using current feedback amplifier and a synchronous demodulation stage. The circuit has a wide high frequency operating range with zero phase shift; hence multiple circuits can work at different frequencies simultaneously to measure the capacitance. The non-ideal characteristic of the circuit has been analyzed and the results verified through LTSpice simulation. Results from the tests on a prototype and a simulation elucidate the practicality of the proposed circuit.

  10. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    Science.gov (United States)

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2014-12-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows semiconducting-like behavior. In this study we have demonstrated that metallic behavior and a decrease in resistivity for Se-doped Co3SnInS2 occurs without suppression of the Seebeck coefficient. From the DFT calculations, when the selenium content is above 0.5, the total crystallographic energy shows that a higher indium occupancy at Sn2 site is more stable. Therefore, it is suggested that the selenium doping suppress the site preference for indium substitution. This is one of the possible explanations for the metallic conductivity observed in Se-doped Co3SnInS2

  11. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  12. Weak wide-band signal detection method based on small-scale periodic state of Duffing oscillator

    Science.gov (United States)

    Hou, Jian; Yan, Xiao-peng; Li, Ping; Hao, Xin-hong

    2018-03-01

    The conventional Duffing oscillator weak signal detection method, which is based on a strong reference signal, has inherent deficiencies. To address these issues, the characteristics of the Duffing oscillatorʼs phase trajectory in a small-scale periodic state are analyzed by introducing the theory of stopping oscillation system. Based on this approach, a novel Duffing oscillator weak wide-band signal detection method is proposed. In this novel method, the reference signal is discarded, and the to-be-detected signal is directly used as a driving force. By calculating the cosine function of a phase space angle, a single Duffing oscillator can be used for weak wide-band signal detection instead of an array of uncoupled Duffing oscillators. Simulation results indicate that, compared with the conventional Duffing oscillator detection method, this approach performs better in frequency detection intervals, and reduces the signal-to-noise ratio detection threshold, while improving the real-time performance of the system. Project supported by the National Natural Science Foundation of China (Grant No. 61673066).

  13. Development of wide-band, time and energy resolving, optical photon detectors with application to imaging astronomy

    International Nuclear Information System (INIS)

    Miller, A.J.; Cabrera, B.; Romani, R.W.; Figueroa-Feliciano, E.; Nam, S.W.; Clarke, R.M.

    2000-01-01

    Superconducting transition edge sensors (TESs) are showing promise for the wide-band spectroscopy of individual photons from the mid-infrared (IR), through the optical, and into the near ultraviolet (UV). Our TES sensors are ∼20 μm square, 40 nm thick tungsten (W) films with a transition temperature of about 80 mK. We typically attain an energy resolution of 0.15 eV FWHM over the optical range with relative timing resolution of 100 ns. Single photon events with sub-microsecond risetimes and few microsecond falltimes have been achieved allowing count rates in excess of 30 kHz per pixel. Additionally, tungsten is approximately 50% absorptive in the optical (dropping to 10% in the IR) giving these devices an intrinsically high quantum efficiency. These combined traits make our detectors attractive for fast spectrophotometers and photon-starved applications such as wide-band, time and energy resolved astronomical observations. We present recent results from our work toward the fabrication and testing of the first TES optical photon imaging arrays

  14. Direct evidence for a systematic evolution of optical band gap and local disorder in Ag, in doped Sb{sub 2}Te phase change material

    Energy Technology Data Exchange (ETDEWEB)

    Shukla, Krishna Dayal; Sahu, Smriti [Discipline of Electrical Engineering, Indian Institute of Technology Indore (India); Manivannan, Anbarasu [Discipline of Electrical Engineering, Indian Institute of Technology Indore (India); Metallurgical Engineering and Materials Science, Indian Institute of Technology Indore, Indore (India); Deshpande, Uday Prabhakarrao [UGC-DAE Consortium for Scientific Research, Indore (India)

    2017-12-15

    Rapid and reversible switching properties of Ag, In doped Sb{sub 2}Te (AIST) phase change material is widely used in re-writable optical data storage applications. We report here a systematic evolution of optical band gap (E{sub g}), local disorder (Tauc parameter, β), and Urbach energy (E{sub U}) of AIST material during amorphous to crystalline transition using in situ UV-Vis-NIR spectroscopy. Unlike GeTe-Sb{sub 2}Te{sub 3} (GST) family, AIST material is found to show unique characteristics as evidenced by the presence of direct forbidden transitions. Crystallization is accompanied by a systematic reduction in E{sub g} from 0.50 eV (as-deposited amorphous at 300 K) to 0.18 eV (crystalline at 300 K). Moreover, decrease in E{sub U} (from 272 to 212 meV) and β is also observed during increasing the temperature in the amorphous phase, revealing direct observation of enhancement of the medium-range order and distortion in short range order, respectively. These findings of optical transition would be helpful for distinguishing the unique behavior of AIST material from GST family. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Wide-band antenna design for use in minimal-scan, microwave tomographic imaging

    Science.gov (United States)

    Klaser, Jacob

    Microwave tomography is widely used in biomedical imaging and nondestructive evaluation of dielectric materials. A novel microwave tomography system that uses an electrically-conformable mirror to steer the incident energy for producing multi-view projection data is being developed in the Non-Destructive Evaluation Laboratory (NDEL). Such a system will have a significant advantage over existing tomography systems in terms of simplicity of design and operation, particularly when there is limited-access of the structure that is being imaged. The major components of a mirror-based tomography system are the source mirror assembly, and a receiver array for capturing the multi-view projection data. This thesis addresses the design and development of the receiver array. This imaging array features balanced, anti-podal Vivaldi antennas, which offer large bandwidth, high gain and a compact size. From the simulations, as well as the experimental results for the antenna, the return loss (S 11) is below -10dB for the range from 2.2GHz to 8.2GHz, and the gain is measured to be near 6dB. The data gathered from the receiver array is then run through MATLAB code for tomographic reconstruction using the Filtered Back-Propagation algorithm from limited-view projections. Initial results of reconstruction from the measured data shows the feasibility of the approach, but a significant challenge remains in interpolating the data for a limited number of receiving antenna elements and removing noise from the reconstructed image.

  16. Ultra wide band radar holographic imaging of buried waste at DOE sites

    International Nuclear Information System (INIS)

    Collins, H.D.; Gribble, R.P.; Hall, T.E.; Lechelt, W.M.

    1995-04-01

    Ultra wideband linear array holography is a unique real-time imaging technique for in-situ inspection of buried waste at various DOE sites. The array can be mounted on various platforms such as crane booms, pickup trucks, ATVs, and scanned generating ''3-D'' subsurface images in real time. Inspection speeds are 0.5 to 2 meters/sec, if the image is viewed in real time, greater for off-line processing. The Ground Penetrating Holographic (GPH) system developed for inspection of DOE sites employs two 32element arrays of tapered-slot antenna operating at 5-GHz and 2.5-GHz center frequencies. The GPH system, which is mounted on a small trailer with a computer image processor, display, and power supply, is capable of imaging a wide swath (1 to 2 meters) with its linear arrays. The lower frequency array will be used at INEL (for greater depth penetration) because of high soil attenuation. Recent holographic ''3-D'' images of buried waste container lids and dielectrics obtained in Hanford sand and INEL soils at various depths graphically illustrate the unique image resolution capabilities of the system. Experimental results using the 5-GHz array will be presented showing the excellent holographic image quality of various subsurface targets in sand and INEL soil

  17. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    Science.gov (United States)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  18. Synthesis of Titanium-doped MgO heteronanostructures with tunable band gap

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Urvashi; Jeevanandam, P., E-mail: jeevafcy@iitr.ernet.in, E-mail: jeevafcy@iitr.ac.in [Indian Institute of Technology Roorkee, Department of Chemistry (India)

    2016-04-15

    Ti{sub x}Mg{sub 1−x}O heteronanostructures (x = 0.02 to 0.50) have been synthesized by a novel thermal decomposition route, and the effect of concentration of titanium and calcination temperature on optical properties of the heteronanostructures has been investigated. Phase analysis using powder X-ray diffraction demonstrates the formation of mixture of MgO and MgTiO{sub 3} when x = 0.02 to 0.20 and pure MgTiO{sub 3} when x = 0.33 to 0.50. Scanning electron microscopy studies show that the Ti{sub x}Mg{sub 1−x}O samples with x = 0.02 to 0.20 consist of particles with a mixture of flower- and rod-like morphology, whereas the Ti{sub x}Mg{sub 1-x}O samples with x = 0.33 to 0.50 possess rod-like morphology. Transmission electron microscopy studies show that the flowers are in turn formed by assembly of nanoparticles and the hollow rods are formed by aggregation of dumbbell-shaped nanoparticles. Diffuse reflectance spectroscopic studies show that band gap of the Ti{sub x}Mg{sub 1−x}O heteronanostructures can be tuned from 3.2 to 4.2 eV by varying the concentration of titanium and the calcination temperature. Photoluminescence spectra show emission bands in visible and near-infrared regions due to defects present in the Ti{sub x}Mg{sub 1−x}O heteronanostructures.

  19. Synthesis of Titanium-doped MgO heteronanostructures with tunable band gap

    International Nuclear Information System (INIS)

    Sharma, Urvashi; Jeevanandam, P.

    2016-01-01

    Ti_xMg_1_−_xO heteronanostructures (x = 0.02 to 0.50) have been synthesized by a novel thermal decomposition route, and the effect of concentration of titanium and calcination temperature on optical properties of the heteronanostructures has been investigated. Phase analysis using powder X-ray diffraction demonstrates the formation of mixture of MgO and MgTiO_3 when x = 0.02 to 0.20 and pure MgTiO_3 when x = 0.33 to 0.50. Scanning electron microscopy studies show that the Ti_xMg_1_−_xO samples with x = 0.02 to 0.20 consist of particles with a mixture of flower- and rod-like morphology, whereas the Ti_xMg_1_-_xO samples with x = 0.33 to 0.50 possess rod-like morphology. Transmission electron microscopy studies show that the flowers are in turn formed by assembly of nanoparticles and the hollow rods are formed by aggregation of dumbbell-shaped nanoparticles. Diffuse reflectance spectroscopic studies show that band gap of the Ti_xMg_1_−_xO heteronanostructures can be tuned from 3.2 to 4.2 eV by varying the concentration of titanium and the calcination temperature. Photoluminescence spectra show emission bands in visible and near-infrared regions due to defects present in the Ti_xMg_1_−_xO heteronanostructures.

  20. Compact Liquid Crystal Based Tunable Band-Stop Filter with an Ultra-Wide Stopband by Using Wave Interference Technique

    Directory of Open Access Journals (Sweden)

    Longzhu Cai

    2017-01-01

    Full Text Available A wave interference filtering section that consists of three stubs of different lengths, each with an individual stopband of its own central frequency, is reported here for the design of band-stop filters (BSFs with ultra-wide and sharp stopbands as well as large attenuation characteristics. The superposition of the individual stopbands provides the coverage over an ultra-wide frequency range. Equations and guidelines are presented for the application of a new wave interference technique to adjust the rejection level and width of its stopband. Based on that, an electrically tunable ultra-wide stopband BSF using a liquid crystal (LC material for ultra-wideband (UWB applications is designed. Careful treatment of the bent stubs, including impedance matching of the main microstrip line and bent stubs together with that of the SMA connectors and impedance adaptors, was carried out for the compactness and minimum insertion and reflection losses. The experimental results of the fabricated device agree very well with that of the simulation. The centre rejection frequency as measured can be tuned between 4.434 and 4.814 GHz when a biased voltage of 0–20 Vrms is used. The 3 dB and 25 dB stopband bandwidths were 4.86 GHz and 2.51 GHz, respectively, which are larger than that of other recently reported LC based tunable BSFs.

  1. Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Magnesium-doped ZnAlO thin films were grown on quartz substrate by ablating the sintered target with a KrF excimer laser. The effect of growth temperature from 30 deg. C to 700 deg. C on structural, optical, and electrical properties has been studied. These films are highly transparent in visible spectrum with average transmittance of 82%. The films grown at low temperature are amorphous while films grown at high temperature are crystalline in nature. These films are highly oriented along (0 0 2) direction. The electrical conductivity, carrier concentration, and electron mobility is found to increase with increase in temperature and then decreases with further increase in temperature. The bandgap is found to vary from 3.86 eV to 4.00 eV for various films

  2. Designed Er(3+)-singly doped NaYF4 with double excitation bands for simultaneous deep macroscopic and microscopic upconverting bioimaging.

    Science.gov (United States)

    Wen, Xuanyuan; Wang, Baoju; Wu, Ruitao; Li, Nana; He, Sailing; Zhan, Qiuqiang

    2016-06-01

    Simultaneous deep macroscopic imaging and microscopic imaging is in urgent demand, but is challenging to achieve experimentally due to the lack of proper fluorescent probes. Herein, we have designed and successfully synthesized simplex Er(3+)-doped upconversion nanoparticles (UCNPs) with double excitation bands for simultaneous deep macroscopic and microscopic imaging. The material structure and the excitation wavelength of Er(3+)-singly doped UCNPs were further optimized to enhance the upconversion emission efficiency. After optimization, we found that NaYF4:30%Er(3+)@NaYF4:2%Er(3+) could simultaneously achieve efficient two-photon excitation (2PE) macroscopic tissue imaging and three-photon excitation (3PE) deep microscopic when excited by 808 nm continuous wave (CW) and 1480 nm CW lasers, respectively. In vitro cell imaging and in vivo imaging have also been implemented to demonstrate the feasibility and potential of the proposed simplex Er(3+)-doped UCNPs as bioprobe.

  3. Variation in band gap of lanthanum chromate by transition metals doping LaCr0.9A0.1O3 (A:Fe/Co/Ni)

    International Nuclear Information System (INIS)

    Naseem, Swaleha; Khan, Wasi; Saad, A. A.; Shoeb, M.; Ahmed, Hilal; Naqvi, A. H.; Husain, Shahid

    2014-01-01

    Transition metal (Fe, Co, Ni) doped lanthanum chromate (LaCrO 3 ) nanoparticles (NPs) were prepared by gel combustion method and calcinated at 800°C. Microstructural studies were carried by XRD and SEM/EDS techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible and photoluminescence techniques. The energy band gap was calculated and the variation was observed with the doping of transition metal ions. Photoluminescence spectra show the emission peak maxima for the pure LaCrO 3 at about 315 nm. Influence of Fe, Co, Ni doping was studied and compared with pure lanthanum chromate nanoparticles

  4. Recharging processes, radiation induced strain and changes of OH - bands under H + ion implantation in Ti doped lithium niobate

    Science.gov (United States)

    Kumar, P.; Moorthy Babu, S.; Bhaumik, I.; Ganesamoorthy, S.; Karnal, A. K.; Kumar, Praveen; Rodrigues, G. O.; Sulania, I.; Kanjilal, D.; Pandey, A. K.; Raman, R.

    2010-01-01

    A systematic analysis of variations in structural and optical characteristics of Z-cut plates of titanium doped congruent lithium niobate single crystals implanted with 120 keV proton beam at various fluences of 10 15, 10 16 and 10 17 protons/cm 2 is presented. Through, high resolution X-ray diffraction, atomic force microscopy, Fourier transform infrared and UV-visible-NIR analysis of congruent lithium niobate, the correlation of properties before and after implantation are discussed. HRXRD (0 0 6) reflection by Triple Crystal Mode shows that both tensile and compressive strain peak are produced by the high fluence implantation. A distinct tensile peak was observed from implanted region for a fluence of 10 16 protons/cm 2. AFM micrographs indicate mountain ridges, bumps and protrusions on target surface on implantation. UV-visible-NIR spectra reveal an increase in charge transfer between Ti 3+/Ti 4+ and ligand oxygen for implantation with 10 15 protons/cm 2, while spectra for higher fluence implanted samples show complex absorption band in the region from 380-1100 nm. Variations of OH - stretching vibration mode were observed for cLN Pure, cLNT2% virgin, and implanted samples with FTIR spectra. The concentration of OH - ion before and after implantation was calculated from integral absorption intensity. The effect of 120 keV proton implantation induced structural, surface and optical studies were correlated.

  5. Observation of a hidden hole-like band approaching the fermi level in K-doped iron selenide superconductor

    International Nuclear Information System (INIS)

    Sunagawa, Masanori; Terashima, Kensei; Hamada, Takahiro

    2016-01-01

    One of the ultimate goals of the study of iron-based superconductors is to identify the common feature that produces the high critical temperature (T c ). In the early days, based on a weak-coupling viewpoint, the nesting between hole- and electron-like Fermi surfaces (FSs) leading to the so-called s± state was considered to be one such key feature. However, this theory has faced a serious challenge ever since the discovery of alkali-metal-doped FeSe (AFS) superconductors, in which only electron-like FSs with a nodeless superconducting gap are observed. Several theories have been proposed, but a consistent understanding is yet to be achieved. Here we show experimentally that a hole-like band exists in K x Fe 2-y Se 2 , which presumably forms a hole-like Fermi surface. The present study suggests that AFS can be categorized in the same group as iron arsenides with both hole- and electron-like FSs present. This result provides a foundation for a comprehensive understanding of the superconductivity in iron-based superconductors. (author)

  6. Anthracene-containing wide-band-gap conjugated polymers for high-open-circuit-voltage polymer solar cells.

    Science.gov (United States)

    Gong, Xue; Li, Cuihong; Lu, Zhen; Li, Guangwu; Mei, Qiang; Fang, Tao; Bo, Zhishan

    2013-07-25

    The synthesis, characterization, and photophysical and photovoltaic properties of two anthracene-containing wide-band-gap donor and acceptor (D-A) alternating conjugated polymers (P1 and P2) are described. These two polymers absorb in the range of 300-600 nm with a band gap of about 2.12 eV. Polymer solar cells with P1:PC71 BM as the active layer demonstrate a power conversion efficiency (PCE) of 2.23% with a high Voc of 0.96 V, a Jsc of 4.4 mA cm(-2) , and a comparable fill factor (FF) of 0.53 under simulated solar illumination of AM 1.5 G (100 mW cm(-2) ). In addition, P2:PC71 BM blend-based solar cells exhibit a PCE of 1.42% with a comparable Voc of 0.89 V, a Jsc of 3.0 mA cm(-2) , and an FF of 0.53. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Penta-SiC5 monolayer: A novel quasi-planar indirect semiconductor with a tunable wide band gap

    Science.gov (United States)

    Naseri, Mosayeb

    2018-03-01

    In this paper, by using of the first principles calculations in the framework of the density functional theory, we systematically investigated the structure, stability, electronic and optical properties of a novel two-dimensional pentagonal monolayer semiconductors namely penta-SiC5 monolayer. Comparing elemental silicon, diamond, and previously reported 2D carbon allotropes, our calculation shows that the predicted penta-SiC5 monolayer has a metastable nature. The calculated results indicate that the predicted monolayer is an indirect semiconductor with a wide band gap of about 2.82 eV by using Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional level of theory which can be effectively tuned by external biaxial strains. The obtained exceptional electronic properties suggest penta-SiC5 monolayer as promising candidates for application in new electronic devices in nano scale.

  8. Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd3+-doped tellurite glass

    Science.gov (United States)

    Zhou, Zi-zhong; Zhou, Ming-han; Su, Xiu-e.; Cheng, Pan; Zhou, Ya-xun

    2017-01-01

    WO3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd3+-doped tellurite-based glasses of TeO2-ZnO-Na2O to improve the 1.32 μm band fluorescence emission. The absorption spectra, Raman spectra, 1.32 μm band fluorescence spectra and differential scanning calorimeter (DSC) curves were measured, together with the Judd-Ofelt intensity parameters, stimulated emission and gain parameters were calculated to evaluate the effects of WO3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation (MPR) processes between the excited levels of Nd3+. The results indicate that the prepared Nd3+-doped tellurite glass with an appropriate amount of WO3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

  9. Narrow band gap and visible light-driven photocatalysis of V-doped Bi{sub 6}Mo{sub 2}O{sub 15} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jian; Qin, Chuanxiang; Huang, Yanlin [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Wang, Yaorong, E-mail: yrwang@suda.edu.cn [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Qin, Lin [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2017-02-28

    Highlights: • V{sup 5+}-doped Bi{sub 6}Mo{sub 2}O{sub 15} was synthesized by the electrospinning preparation. • The band gap energy of Bi{sub 6}Mo{sub 2}O{sub 15} was greatly reduced by V-doping in the lattices. • V-doped Bi{sub 6}Mo{sub 2}O{sub 15} shows high activity in RhB degradation under visible light. • Crystal structure of Bi{sub 6}Mo{sub 2}O{sub 15} is favorable for high photocatalytic capacity. - Abstract: Pure and V{sup 5+}-doped Bi{sub 6}Mo{sub 2}O{sub 15} (3Bi{sub 2}O{sub 3}·2MoO{sub 3}) photocatalysts were synthesized through electrospinning, followed by low-temperature heat treatment. The samples developed into nanoparticles with an average size of approximately 50 nm. The crystalline phases were verified via X-ray powder diffraction measurements (XRD). The surface properties of the photocatalysts were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses. The UV–vis spectra showed that V doping in Bi{sub 6}Mo{sub 2}O{sub 15} shifted the optical absorption from the UV region to the visible-light wavelength region. The energy of the band gap of Bi{sub 6}Mo{sub 2}O{sub 15} was reduced by V doping in the lattices. The photocatalytic activities of the pure and V-doped Bi{sub 6}Mo{sub 2}O{sub 15} were tested through photodegradation of rhodamine B (RhB) dye solutions under visible light irradiation. Results showed that 20 mol% V-doped Bi{sub 6}Mo{sub 2}O{sub 15} achieved efficient photocatalytic ability. RhB could be degraded by V-doped Bi{sub 6}Mo{sub 2}O{sub 15} in 2 h. The photocatalytic activities and mechanisms were discussed according to the characteristics of the crystal structure and the results of EIS and XPS measurements.

  10. Widely Applicable n-Type Molecular Doping for Enhanced Photovoltaic Performance of All-Polymer Solar Cells.

    Science.gov (United States)

    Xu, Yalong; Yuan, Jianyu; Sun, Jianxia; Zhang, Yannan; Ling, Xufeng; Wu, Haihua; Zhang, Guobing; Chen, Junmei; Wang, Yongjie; Ma, Wanli

    2018-01-24

    A widely applicable doping design for emerging nonfullerene solar cells would be an efficient strategy in order to further improve device photovoltaic performance. Herein, a family of compound TBAX (TBA= tetrabutylammonium, X = F, Cl, Br, or I, containing Lewis base anions are considered as efficient n-dopants for improving polymer-polymer solar cells (all-PSCs) performance. In all cases, significantly increased fill factor (FF) and slightly increased short-circuit current density (J sc ) are observed, leading to a best PCE of 7.0% for all-PSCs compared to that of 5.8% in undoped devices. The improvement may be attributed to interaction between different anions X - (X = F, Cl, Br, and I) in TBAX with the polymer acceptor. We reveal that adding TBAX at relatively low content does not have a significantly impact on blend morphology, while it can reduce the work function (WF) of the electron acceptor. We find this simple and solution processable n-type doping can efficiently restrain charge recombination in all-polymer solar cell devices, resulting in improved FF and J sc. More importantly, our findings may provide new protocles and insights using n-type molecular dopants in improving the performance of current polymer-polymer solar cells.

  11. An Autonomous Ultra-Wide Band-Based Attitude and Position Determination Technique for Indoor Mobile Laser Scanning

    Directory of Open Access Journals (Sweden)

    Lawrence Lau

    2018-04-01

    Full Text Available Mobile laser scanning (MLS has been widely used in three-dimensional (3D city modelling data collection, such as Google cars for Google Map/Earth. Building Information Modelling (BIM has recently emerged and become prominent. 3D models of buildings are essential for BIM. Static laser scanning is usually used to generate 3D models for BIM, but this method is inefficient if a building is very large, or it has many turns and narrow corridors. This paper proposes using MLS for BIM 3D data collection. The positions and attitudes of the mobile laser scanner are important for the correct georeferencing of the 3D models. This paper proposes using three high-precision ultra-wide band (UWB tags to determine the positions and attitudes of the mobile laser scanner. The accuracy of UWB-based MLS 3D models is assessed by comparing the coordinates of target points, as measured by static laser scanning and a total station survey.

  12. ALMACAL I: FIRST DUAL-BAND NUMBER COUNTS FROM A DEEP AND WIDE ALMA SUBMILLIMETER SURVEY, FREE FROM COSMIC VARIANCE

    Energy Technology Data Exchange (ETDEWEB)

    Oteo, I.; Ivison, R. J. [Institute for Astronomy, University of Edinburgh, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ UK (United Kingdom); Zwaan, M. A.; Biggs, A. D. [European Southern Observatory, Karl-Schwarzschild-Strasse 2, D-85748 Garching (Germany); Smail, I., E-mail: ivanoteogomez@gmail.com [Centre for Extragalactic Astronomy, Department of Physics, Durham University, South Road, Durham DH1 3LE UK (United Kingdom)

    2016-05-01

    We have exploited ALMA calibration observations to carry out a novel, wide, and deep submillimeter (submm) survey, almacal. These calibration data comprise a large number of observations of calibrator fields in a variety of frequency bands and array configurations. By gathering together data acquired during multiple visits to many ALMA calibrators, it is possible to reach noise levels which allow the detection of faint, dusty, star-forming galaxies (DSFGs) over a significant area. In this paper, we outline our survey strategy and report the first results. We have analyzed data for 69 calibrators, reaching depths of ∼25 μ Jy beam{sup −1} at sub-arcsec resolution. Adopting a conservative approach based on ≥5 σ detections, we have found 8 and 11 DSFGs in ALMA bands 6 and 7, respectively, with flux densities S {sub 1.2} m {sub m} ≥ 0.2 mJy. The faintest galaxies would have been missed by even the deepest Herschel surveys. Our cumulative number counts have been determined independently at 870 μ m and 1.2 mm from a sparse sampling of the astronomical sky, and are thus relatively free of cosmic variance. The counts are lower than reported previously by a factor of at least 2×. Future analyses will yield large, secure samples of DSFGs with redshifts determined via the detection of submm spectral lines. Uniquely, our strategy then allows for morphological studies of very faint DSFGs—representative of more normal star-forming galaxies than conventional submm galaxies—in fields where self-calibration is feasible, yielding milliarcsecond spatial resolution.

  13. Tm3+/Yb3+ co-doped tellurite glass with silver nanoparticles for 1.85 μm band laser material

    Science.gov (United States)

    Huang, Bo; Zhou, Yaxun; Cheng, Pan; Zhou, Zizhong; Li, Jun; Jin, Wei

    2016-10-01

    Tm3+/Yb3+ co-doped tellurite glasses with different silver nanoparticles (Ag NPs) concentrations were prepared using the conventional melt-quenching technique and characterized by the UV/Vis/NIR absorption spectra, 1.85 μm band fluorescence emission spectra, transmission electron microscopy (TEM) images, differential scanning calorimeter (DSC) curves and X-ray diffraction (XRD) patterns to investigate the effects of Ag NPs on the 1.85 μm band spectroscopic properties of Tm3+ ions, thermal stability and structural nature of glass hosts. Under the excitation of 980 nm laser diode (LD), the 1.85 μm band fluorescence emission of Tm3+ ions enhances significantly in the presence of Ag NPs with average diameter of ∼8 nm and local surface Plasmon resonance (LSPR) band of ∼590 nm, which is mainly attributed to the increased local electric field induced by Ag NPs at the proximity of doped rare-earth ions on the basis of energy transfer from Yb3+ to Tm3+ ions. An improvement by about 110% of fluorescence intensity is observed in the Tm3+/Yb3+ co-doped tellurite glass containing 0.5 mol% amount of AgNO3 while the prepared glass samples possess good thermal stability and amorphous structural nature. Meanwhile, the Judd-Ofelt intensity parameters Ωt (t = 2,4,6), spontaneous radiative transition probabilities, fluorescence branching ratios and radiative lifetimes of relevant excited levels of Tm3+ ions were determined based on the Judd-Ofelt theory to reveal the enhanced effects of Ag NPs on the 1.85 μm band spectroscopic properties, and the energy transfer micro-parameters and phonon contribution ratios were calculated based on the non-resonant energy transfer theory to elucidate the energy transfer mechanism between Yb3+ and Tm3+ ions. The present results indicate that the prepared Tm3+/Yb3+ co-doped tellurite glass with an appropriate amount of Ag NPs is a promising lasing media applied for 1.85 μm band solid-state lasers and amplifiers.

  14. Multi-band emission in a wide wavelength range from tin oxide/Au nanocomposites grown on porous anodic alumina substrate (AAO)

    International Nuclear Information System (INIS)

    Norek, Małgorzata; Michalska-Domańska, Marta; Stępniowski, Wojciech J.; Ayala, Israel; Bombalska, Aneta; Budner, Bogusław

    2013-01-01

    The photoluminescence (PL) properties of tin oxide nanostructures are investigated. Three samples of different morphology, induced by deposition process and various geometrical features of nanoporous anodic aluminum oxide (AAO) substrate, are analyzed. X-ray photoelectronic spectroscopy (XPS) analysis reveals the presence of two forms of tin oxide on the surface of all studied samples: SnO and SnO 2 . The former form is typical for reduced surface with bridging oxygen atoms and every other row of in-plane oxygen atoms removed. The oxygen defects give rise to a strong emission in visible region. Two intense PL peaks are observed centered at about 540 (band I) and 620 (band II) nm. The origin of these bands was ascribed to the recombination of electrons from the conduction band (band I) and shallow traps levels (band II) to the surface oxygen vacancy levels. Upon deposition of Au nanoparticles on the top of tin oxide nanostructures the emission at 540 and 620 nm disappears and a new band (band III) occurs in the range >760 nm. The PL mechanism operating in the studied systems is discussed. The tin oxide/Au nanocomposites can be used as efficient multi-band light emitters in a wide (from visible to near infrared) wavelength range.

  15. On the perspectives of wide-band gap power devices in electronic-based power conversion for renewable systems

    Energy Technology Data Exchange (ETDEWEB)

    Vasconcelos Araujo, Samuel

    2013-10-01

    The high breakdown field from WBG materials allows the construction of unipolar devices with very low specific chip resistance mainly characterized by very low conduction and switching losses, even at high blocking voltages. Suitable concepts for SiC and GaN range from traditional FET structures driven by a MOS interface or a PN-Junction, bipolar devices and even high-electron mobility transistors (HEMT). A detailed revision of the literature will be performed in this work with the objective of providing a broad overview of possible approaches, along with inherent advantages and limitations. In addition to this, a benchmarking of several SiC-based devices technologies rated for 1200 V and 1700 V will be performed against their state-of-the-art Silicon-counterparts. Concerning the application of wide band gap devices in renewable energy systems, a significant cost reduction potential can be obtained due to smaller expenditure with magnetic filters and cooling, alongside higher efficiency levels. These aspects will be discussed in details in order to identify constraints and bottlenecks at application level with special focus on photovoltaic and wind power systems.

  16. ESTIMATION OF WIDE BAND RADAR CROSS SECTION (RCS OF REGULAR SHAPED OBJECTS USING METHOD OF MOMENTS (MOM

    Directory of Open Access Journals (Sweden)

    M. Madheswaran

    2012-06-01

    Full Text Available Modern fighter aircrafts, ships, missiles etc need to be very low Radar Cross Section (RCS designs, to avoid detection by hostile radars. Hence accurate prediction of RCS of complex objects like aircrafts is essential to meet this requirement. A simple and efficient numerical procedure for treating problems of wide band RCS prediction Perfect Electric Conductor (PEC objects is developed using Method of Moment (MoM. Implementation of MoM for prediction of RCS involves solving Electric Field Integral Equation (EFIE for electric current using the vector and scalar potential solutions, which satisfy the boundary condition that the tangential electric field at the boundary of the PEC body is zero. For numerical purposes, the objects are modeled using planar triangular surfaces patches. Set of special sub-domain type basis functions are defined on pairs of adjacent triangular patches. These basis functions yield a current representation free of line or point charges at sub-domain boundaries. Once the current distribution is obtained, dipole model is used to find Scattering field in free space. RCS can be calculated from the scattered and incident fields. Numerical results for a square plate, a cube, and a sphere are presented over a bandwidth.

  17. Efficient photocatalytic degradation of perfluorooctanoic acid by a wide band gap p-block metal oxyhydroxide InOOH

    Science.gov (United States)

    Xu, Jingjing; Wu, Miaomiao; Yang, Jingwen; Wang, Zhengmei; Chen, Mindong; Teng, Fei

    2017-09-01

    In this work, we prepared a new wide band gap semiconductor, p-block metal oxyhydroxide InOOH, which exhibits efficient activity for perfluorooctanoic acid (PFOA) degradation under mild conditions and UV light irradiation. The apparent rate constant for PFOA degradation by InOOH is 27.6 times higher than that for P25 titania. Results show that ionized PFOA (C7F15COO-) can be adsorbed much more efficiently on the surface of InOOH than P25. Then, the adsorbed C7F15COO- can be decomposed directly by photo-generated holes to form C7F15COOrad radicals. This process is the key step for the photocalytic degradation of PFOA. Major degradation intermediates, fluoride ions and perfluorinated carboxylic acids (PFCAs) with shorter chain lengths were detected during PFOA degradation. A possible pathway for photocatalytic degradation of PFOA is proposed based on the experimental results. Therefore, this studies indicates a potential new material and method for the efficient treatment of PFCA pollutants under mild conditions.

  18. Fast response air-to-fuel ratio measurements using a novel device based on a wide band lambda sensor

    Science.gov (United States)

    Regitz, S.; Collings, N.

    2008-07-01

    A crucial parameter influencing the formation of pollutant gases in internal combustion engines is the air-to-fuel ratio (AFR). During transients on gasoline and diesel engines, significant AFR excursions from target values can occur, but cycle-by-cycle AFR resolution, which is helpful in understanding the origin of deviations, is difficult to achieve with existing hardware. This is because current electrochemical devices such as universal exhaust gas oxygen (UEGO) sensors have a time constant of 50-100 ms, depending on the engine running conditions. This paper describes the development of a fast reacting device based on a wide band lambda sensor which has a maximum time constant of ~20 ms and enables cyclic AFR measurements for engine speeds of up to ~4000 rpm. The design incorporates a controlled sensor environment which results in insensitivity to sample temperature and pressure. In order to guide the development process, a computational model was developed to predict the effect of pressure and temperature on the diffusion mechanism. Investigations regarding the sensor output and response were carried out, and sensitivities to temperature and pressure are examined. Finally, engine measurements are presented.

  19. Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Soumendu, E-mail: soumendu@bose.res.in; Baral, Sayan; Mookerjee, Abhijit [Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Sector-III, Salt Lake City, Kolkata 700 098 (India); Kaphle, Gopi Chandra [Central Department of Physics, Tribhuvan University, Kathmandu (Nepal)

    2015-08-28

    Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO){sub 24} nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO){sub 24} nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.

  20. Wide-Gap Chalcopyrites

    CERN Document Server

    Siebentritt, Susanne

    2006-01-01

    Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of the materials, the electronic structure and the transport through interfaces and grain boundaries, the formation of the electric field in a solar cell, the mechanisms and suppression of recombination, the role of inhomogeneities, and the technological role of wide-gap chalcopyrites.

  1. Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

    Science.gov (United States)

    Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

    2018-05-01

    The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

  2. Valence band electronic structure of Ho-doped La0.67Ca0.33MnO3 using ultra-violet photoemission spectroscopy

    Science.gov (United States)

    Rout, S. K.; Mukharjee, R. N.; Mishra, D. K.; Roul, B. K.; Sekhar, B. R.; Dalai, M. K.

    2017-05-01

    In this manuscript we report the valence band electronic structure of Ho doped La0.67Ca0.33MnO3 using ultraviolet photoemission spectroscopy. We compared the density of states of La0.67Ca0.33MnO3, La0.67Ca0.3Ho0.03MnO3 and La0.64Ho0.03Ca0.33MnO3 near the Fermi level at various temperatures. Significant amount of changes have been observed at higher temperatures (220 K and 300 K) where the near Fermi level density of states increases with Ho doping into La0.67Ca0.33MnO3 indicating the enhancement of magnitude of change in metallicity (conductivity).

  3. Monitoring of the state of the paper machine circulation water with a wide-band impedance measurement; Paperikoneen kiertoveden tilan seuranta laajakaistaisella impedanssimittauksella - MPKT 02

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, T [VTT Automation, Espoo (Finland). Measurement Technology

    1999-12-31

    A new measurement method for monitoring the chemical state of the circulation water in the paper machine is proposed and studied. In the method, the electrical properties - conductivity and permittivity - of the water are measured in a wide frequency band: 20 Hz - 10 mhz. Large-molecule organic compounds in the water are expected cause characteristic changes in the dielectric properties of the water. Continuous monitoring of the permittivity in the wide frequency band thus reveals their presence. Various electronic measurement setups for the measurement are constructed and studied by using test samples. If the method turns out to be promising, a prototype device will be made. (orig.)

  4. Monitoring of the state of the paper machine circulation water with a wide-band impedance measurement; Paperikoneen kiertoveden tilan seuranta laajakaistaisella impedanssimittauksella - MPKT 02

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, T. [VTT Automation, Espoo (Finland). Measurement Technology

    1998-12-31

    A new measurement method for monitoring the chemical state of the circulation water in the paper machine is proposed and studied. In the method, the electrical properties - conductivity and permittivity - of the water are measured in a wide frequency band: 20 Hz - 10 mhz. Large-molecule organic compounds in the water are expected cause characteristic changes in the dielectric properties of the water. Continuous monitoring of the permittivity in the wide frequency band thus reveals their presence. Various electronic measurement setups for the measurement are constructed and studied by using test samples. If the method turns out to be promising, a prototype device will be made. (orig.)

  5. Wide band gap Ga2O3 as efficient UV-C photocatalyst for gas-phase degradation applications.

    Science.gov (United States)

    Jędrzejczyk, Marcin; Zbudniewek, Klaudia; Rynkowski, Jacek; Keller, Valérie; Grams, Jacek; Ruppert, Agnieszka M; Keller, Nicolas

    2017-12-01

    α, β, γ, and δ polymorphs of 4.6-4.8 eV wide band gap Ga 2 O 3 photocatalysts were prepared via a soft chemistry route. Their photocatalytic activity under 254 nm UV-C light in the degradation of gaseous toluene was strongly depending on the polymorph phase. α- and β-Ga 2 O 3 photocatalysts enabled achieving high and stable conversions of toluene with selectivities to CO 2 within the 50-90% range, by contrast to conventional TiO 2 photocatalysts that fully deactivate very rapidly on stream in similar operating conditions with rather no CO 2 production, no matter whether UV-A or UV-C light was used. The highest performances were achieved on the high specific surface area β-Ga 2 O 3 photocatalyst synthesized by adding polyethylene glycol (PEG) as porogen before precipitation, with stable toluene conversion and mineralization rate into CO 2 strongly overcoming those obtained on commercial β-Ga 2 O 3 . They were attributed to favorable physicochemical properties in terms of high specific surface area, small mean crystallite size, good crystallinity, high pore volume with large size mesopore distribution and appropriate surface acidity, and to the possible existence of a double local internal field within Ga 3+ units. In the degradation of hydrogen sulfide, PEG-derived β-Ga 2 O 3 takes advantage from its high specific surface area for storing sulfate, and thus for increasing its resistance to deactivation and the duration at total sulfur removal when compared to other β-Ga 2 O 3 photocatalysts. So, we illustrated the interest of using high surface area β-Ga 2 O 3 in environmental photocatalysis for gas-phase depollution applications.

  6. Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

    Science.gov (United States)

    Kim, B. W.; Majerfeld, A.

    1996-02-01

    We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

  7. Structural and Optical Properties of Eu Doped ZnO Nanorods prepared by Pulsed Laser Deposition

    KAUST Repository

    Alarawi, Abeer

    2014-01-01

    Nano structured wide band gap semiconductors have attracted attention of many researchers due to their potential electronic and optoelectronic applications. In this thesis, we report successful synthesis of well aligned Eu doped ZnO nano

  8. Ultra-Wideband Optical Modulation Spectrometer (OMS) Development: Study of the Optical Setup of a Wide-Band Optical Modulation Spectrometer

    Science.gov (United States)

    Tolls, Volker; Stringfellow, Guy (Technical Monitor)

    2001-01-01

    The purpose of this study is to advance the design of the optical setup for a wide-band Optical Modulation Spectrometer (OMS) for use with astronomical heterodyne receiver systems. This report describes the progress of this investigation achieved from March until December 2001.

  9. Photoluminescence measurements of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As

    International Nuclear Information System (INIS)

    Furtado, M.T.; Weid, J.P. von der.

    1984-01-01

    The photoluminescence of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As, with x=0.30-0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with (h/2π)ω sub(q) approx. 35 + - 2 meV and (h/2π) ω sub(q) approx. 45 + - 2 meV are found for the optical band, yielding a zero phonon transition energy - 1.73 + - 0.02 eV and a Franck-Condon shift approx. 0.17-0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17 + - 0.04 eV. Possible mechanisms for the radiative transitions are discussed. (Author) [pt

  10. Luminescence of Ce3+ doped LaPO4 nanophosphors upon Ce3+ 4f-5d and band-to-band excitation

    International Nuclear Information System (INIS)

    Stryganyuk, G.; Trots, D.M.; Voloshinovskii, A.; Shalapska, T.; Zakordonskiy, V.; Vistovskyy, V.; Pidzyrailo, M.; Zimmerer, G.

    2008-01-01

    Luminescence spectral-kinetic studies have been performed for pure and Ce-doped LaPO 4 micro- and nanosized phosphates using synchrotron radiation for the excitation within 5-20 eV energy range at T=8-300 K. Mechanisms for the excitation of Ce 3+ 5d-4f emission as well as the quenching processes are discussed. The influence of surface defects has been considered to modify considerably the luminescent properties of nanosized phosphors upon the excitation in the energy range of Ce 3+ 4f-5d transitions and LaPO 4 host absorption

  11. Multicolor tuning towards single red-emission band of upconversion nanoparticles for tunable optical component and optical/x-ray imaging agents via Ce"3"+ doping

    International Nuclear Information System (INIS)

    Yi, Zhigao; Zeng, Tianmei; Xu, Yaru; Qian, Chao; Liu, Hongrong; Zeng, Songjun; Lu, Wei; Hao, Jianhua

    2015-01-01

    A simple strategy of Ce"3"+ doping is proposed to realize multicolor tuning and predominant red emission in BaLnF_5:Yb"3"+/Ho"3"+ (Ln"3"+ = Gd"3"+, Y"3"+, Yb"3"+) systems. A tunable upconversion (UC) multicolor output from green/yellow to red can be readily achieved in a fixed Yb"3"+/Ho"3"+ composition by doping Ce"3"+, providing an effective route for multicolor tuning widely used for various optical components. Moreover, compared with Ce"3"+-free UC nanoparticles (UCNPs), a remarkable enhancement of the red-to-green (R/G) ratio is observed by doping 30% Ce"3"+, arising from the two largely promoted cross-relaxation (CR) processes between Ce"3"+ and Ho"3"+. UCNPs with pure red emission are selected as in vivo UC bioimaging agents, demonstrating the merits of deep penetration depth, the absence of autofluorescence and high contrast in small animal bioimaging. Moreover, such fluorescence imaging nanoprobes can also be used as contrast agents for three-dimensional (3D) x-ray bioimaging by taking advantage of the high K-edge values and x-ray absorption coefficients of Ba"2"+, Gd"3"+, and Ce"3"+ in our designed nanoprobes. Thus, the simultaneous realization of multicolor output, highly enhanced R/G ratio, and predominant red emission makes the Ce"3"+-doped UCNPs very useful for widespread applications in optical components and bioimaging. (paper)

  12. Multicolor tuning towards single red-emission band of upconversion nanoparticles for tunable optical component and optical/x-ray imaging agents via Ce(3+) doping.

    Science.gov (United States)

    Yi, Zhigao; Zeng, Tianmei; Xu, Yaru; Lu, Wei; Qian, Chao; Liu, Hongrong; Zeng, Songjun; Hao, Jianhua

    2015-09-25

    A simple strategy of Ce(3+) doping is proposed to realize multicolor tuning and predominant red emission in BaLnF5:Yb(3+)/Ho(3+) (Ln(3+) = Gd(3+), Y(3+), Yb(3+)) systems. A tunable upconversion (UC) multicolor output from green/yellow to red can be readily achieved in a fixed Yb(3+)/Ho(3+) composition by doping Ce(3+), providing an effective route for multicolor tuning widely used for various optical components. Moreover, compared with Ce(3+)-free UC nanoparticles (UCNPs), a remarkable enhancement of the red-to-green (R/G) ratio is observed by doping 30% Ce(3+), arising from the two largely promoted cross-relaxation (CR) processes between Ce(3+) and Ho(3+). UCNPs with pure red emission are selected as in vivo UC bioimaging agents, demonstrating the merits of deep penetration depth, the absence of autofluorescence and high contrast in small animal bioimaging. Moreover, such fluorescence imaging nanoprobes can also be used as contrast agents for three-dimensional (3D) x-ray bioimaging by taking advantage of the high K-edge values and x-ray absorption coefficients of Ba(2+), Gd(3+), and Ce(3+) in our designed nanoprobes. Thus, the simultaneous realization of multicolor output, highly enhanced R/G ratio, and predominant red emission makes the Ce(3+)-doped UCNPs very useful for widespread applications in optical components and bioimaging.

  13. Oxygen effects on the interfacial electronic structure of titanyl phthalocyanine film: p-Type doping, band bending and Fermi level alignment

    International Nuclear Information System (INIS)

    Nishi, Toshio; Kanai, Kaname; Ouchi, Yukio; Willis, Martin R.; Seki, Kazuhiko

    2006-01-01

    The effect of oxygen doping on titanyl phthalocyanine (TiOPc) film was investigated by ultraviolet photoelectron spectroscopy (UPS). The electronic structure of the interface formed between TiOPc films deposited on highly oriented pyrolytic graphite (HOPG) was clearly different between the films prepared in ultrahigh vacuum (UHV) and under O 2 atmosphere (1.3 x 10 -2 Pa). The film deposited in UHV showed downward band bending characteristic of n-type semiconductor, possibly due to residual impurities working as unintentional n-type dopants. On the other hand, the film deposited under O 2 atmosphere showed upward band bending characteristic of p-type semiconductor. Such trends, including the conversion from n- to p-type, are in excellent correspondence with reported field effect transistor characteristics of TiOPc, and clearly demonstrates that bulk TiOPc film was p-doped with oxygen. In order to examine the Fermi level alignment between TiOPc film and the substrate, the energy of the highest occupied molecular orbital (HOMO) of TiOPc relative to the Fermi level of the conductive substrate was determined for various substrates. The alignment between the Fermi level of conductive substrate and Fermi level of TiOPc film at fixed energy in the bandgap was not observed for the TiOPc film prepared in UHV, possibly because of insufficient charge density in the TiOPc film. This situation was drastically changed when the TiOPc film exposed to O 2 , and clear alignment of the Fermi level fixed at 0.6 eV above the HOMO with the Fermi level of the conducting substrate was observed, probably by p-type doping effect of oxygen. These are the first direct and quantitative information about bulk oxygen doping from the viewpoint of the electronic structure. These results suggest that similar band bending with Fermi level alignment may be also achieved for other organic semiconductors under practical device conditions, and also call for caution at the comparison of experimental

  14. The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene

    Directory of Open Access Journals (Sweden)

    Ning Yang

    2018-02-01

    Full Text Available The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has the largest adsorption energy on methane, while the armchair graphene with Order stacking is opposite. In addition, both the Order and Bernal stacked graphenes possess a positive linear relationship between adsorption energy and layer number. Furthermore, they always have larger adsorption energy in zigzag graphene. For electronic properties, the results show that the stacking effects on band gap are significant, but it does not cause big changes to band structure and density of states. In the comparison of distance, the average interlamellar spacing of the Order stacked graphene is the largest. Moreover, the adsorption effect is the result of the interactions between graphene and methane combined with the change of graphene’s structure. Lastly, the armchair graphene with Order stacking possesses the lowest formation energy in these five dopants. It could be the best choice for doping to improve the methane adsorption.

  15. Band structure and visible light photocatalytic activity of multi-type nitrogen doped TiO(2) nanoparticles prepared by thermal decomposition.

    Science.gov (United States)

    Dong, Fan; Zhao, Weirong; Wu, Zhongbiao; Guo, Sen

    2009-03-15

    Multi-type nitrogen doped TiO(2) nanoparticles were prepared by thermal decomposition of the mixture of titanium hydroxide and urea at 400 degrees C for 2h. The as-prepared photocatalysts were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectra (UV-vis DRS), and photoluminescence (PL). The results showed that the as-prepared samples exhibited strong visible light absorption due to multi-type nitrogen doped in the form of substitutional (N-Ti-O and Ti-O-N) and interstitial (pi* character NO) states, which were 0.14 and 0.73 eV above the top of the valence band, respectively. A physical model of band structure was established to clarify the visible light photocatalytic process over the as-prepared samples. The photocatalytic activity was evaluated for the photodegradation of gaseous toluene under visible light irradiation. The activity of the sample prepared from wet titanium hydroxide and urea (TiO(2)-Nw, apparent reaction rate constant k = 0.045 min(-1)) was much higher than other samples including P25 (k = 0.0013 min(-1)). The high activity can be attributed to the results of the synergetic effects of strong visible light absorption, good crystallization, large surface hydroxyl groups, and enhanced separation of photoinduced carriers.

  16. Antifungal activity of wide band gap Thioglycolic acid capped ZnS:Mn semiconductor nanoparticles against some pathogenic fungi

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, Isam M.; Ali, Iftikhar M. [Department of physics, College of Science, Baghdad University, Baghdad (Iraq); Dheeb, Batol Imran [Department of Biology, College of Education, Iraqia University, Baghdad (Iraq); Abas, Qayes A. [Department of physics, College of Education, University of Anbar, Anbar (Iraq); Asmeit Ramizy, E-mail: asmat_hadithi@yahoo.com [Department of physics, College of Science, University of Anbar, Anbar (Iraq); Renewable energy Research Center, University of Anbar, Anbar (Iraq); Eisa, M.H. [Department of physics, College of Science, Sudan University of Science Technology, Khartoum 11113 (Sudan); Department of physics, College of Science, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh 11623 (Saudi Arabia); Aljameel, A.I. [Department of physics, College of Science, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh 11623 (Saudi Arabia)

    2017-04-01

    The manganese doped zinc sulfide nanoparticles were synthesized by simple aqueous chemical reaction of manganese chloride, zinc acetate and thioacitamide in aqueous solution. Thioglycolic acid is used as capping agent for controlling the nanoparticle size. The main advantage of the ZnS:Mn nanoparticles of diameter ~ 2.73 nm is that the sample is prepared by using non-toxic precursors in a cost effective and eco-friendly way. The structural, morphological and chemical composition of the nanoparticles have been investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) with energy dispersion spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy. The nanosize of the prepared nanoparticles was elucidated by Scanning Electron Microscopy (SEM). FTIR result ensures that Thioglycolic acid is well bonded on the surface of ZnS:Mn NPs. The antifungal effects of Thioglycolic acid capped ZnS:Mn nanoparticles exhibited a potent antifungal activity against tested fungal strains, so deserving further investigation for clinical applications. The antifungal property of manganese doped zinc sulphide nanoparticles is attributed to the generation of reactive oxygen species due to the interaction of nanoparticles with water. Additionally, the presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes resulting in growth inhibition. - Highlights: • The manganese doped zinc sulfide nanoparticles were synthesized. • Thioglycolic acid is used as capping agent for controlling the nanoparticle size. • The structural, morphological and chemical composition of the nanoparticles has been investigated. • The presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes.

  17. Antifungal activity of wide band gap Thioglycolic acid capped ZnS:Mn semiconductor nanoparticles against some pathogenic fungi

    International Nuclear Information System (INIS)

    Ibrahim, Isam M.; Ali, Iftikhar M.; Dheeb, Batol Imran; Abas, Qayes A.; Asmeit Ramizy; Eisa, M.H.; Aljameel, A.I.

    2017-01-01

    The manganese doped zinc sulfide nanoparticles were synthesized by simple aqueous chemical reaction of manganese chloride, zinc acetate and thioacitamide in aqueous solution. Thioglycolic acid is used as capping agent for controlling the nanoparticle size. The main advantage of the ZnS:Mn nanoparticles of diameter ~ 2.73 nm is that the sample is prepared by using non-toxic precursors in a cost effective and eco-friendly way. The structural, morphological and chemical composition of the nanoparticles have been investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) with energy dispersion spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy. The nanosize of the prepared nanoparticles was elucidated by Scanning Electron Microscopy (SEM). FTIR result ensures that Thioglycolic acid is well bonded on the surface of ZnS:Mn NPs. The antifungal effects of Thioglycolic acid capped ZnS:Mn nanoparticles exhibited a potent antifungal activity against tested fungal strains, so deserving further investigation for clinical applications. The antifungal property of manganese doped zinc sulphide nanoparticles is attributed to the generation of reactive oxygen species due to the interaction of nanoparticles with water. Additionally, the presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes resulting in growth inhibition. - Highlights: • The manganese doped zinc sulfide nanoparticles were synthesized. • Thioglycolic acid is used as capping agent for controlling the nanoparticle size. • The structural, morphological and chemical composition of the nanoparticles has been investigated. • The presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes.

  18. A first-principle investigation into effect of B-and BN-doped C60 in ...

    Indian Academy of Sciences (India)

    Annual Meetings · Mid Year Meetings · Discussion Meetings · Public Lectures · Lecture Workshops · Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 40; Issue 7. A first-principle investigation into effect of B- and BN-doped C 60 in lowering dehydrogenation of MXH 4 ...

  19. A first-principle investigation into effect of B-and BN-doped C60 in ...

    Indian Academy of Sciences (India)

    principle investigation into effect of B- and BN-doped C 60 in lowering dehydrogenation of MXH 4 (where M = Na, Li and X = Al, B). MEENAKSHI DEEPAK AGNIHOTRI KIRAN JEET HITESH SHARMA. Volume 40 Issue 7 December 2017 pp 1397-1403 ...

  20. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

    Energy Technology Data Exchange (ETDEWEB)

    Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N. [Belarusian State University (Belarus); Zabrodskii, A. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy W{sub p} and effective acceptor bandwidth W{sub a} are obtained. In calculating W{sub a}, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that W{sub p} is lower than W{sub a}, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature T{sub j} of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3T{sub j}/2 on their concentration N and degree of compensation K (the ratio between the

  1. Slice-based supine-to-standing posture deformation for chinese anatomical models and the dosimetric results with wide band frequency electromagnetic field exposure: Simulation

    International Nuclear Information System (INIS)

    Wu, T.; Tan, L.; Shao, Q.; Li, Y.; Yang, L.; Zhao, C.; Xie, Y.; Zhang, S.

    2013-01-01

    Standing Chinese adult anatomical models are obtained from supine-postured cadaver slices. This paper presents the dosimetric differences between the supine and the standing postures over wide band frequencies and various incident configurations. Both the body level and the tissue/organ level differences are reported for plane wave and the 3T magnetic resonance imaging radiofrequency electromagnetic field exposure. The influence of posture on the whole body specific absorption rate and tissue specified specific absorption rate values is discussed. . (authors)

  2. Accuracy and Transferability of Ab Initio Electronic Band Structure Calculations for Doped BiFeO3

    Science.gov (United States)

    Gebhardt, Julian; Rappe, Andrew M.

    2017-11-01

    BiFeO3 is a multiferroic material and, therefore, highly interesting with respect to future oxide electronics. In order to realize such devices, pn junctions need to be fabricated, which are currently impeded by the lack of successful p-type doping in this material. In order to guide the numerous research efforts in this field, we recently finished a comprehensive computational study, investigating the influence of many dopants onto the electronic structure of BiFeO3. In order to allow for this large scale ab initio study, the computational setup had to be accurate and efficient. Here we discuss the details of this assessment, showing that standard density-functional theory (DFT) yields good structural properties. The obtained electronic structure, however, suffers from well-known shortcomings. By comparing the conventional DFT results for alkali and alkaline-earth metal doping with more accurate hybrid-DFT calculations, we show that, in this case, the problems of standard DFT go beyond a simple systematic error. Conventional DFT shows bad transferability and the more reliable hybrid-DFT has to be chosen for a qualitatively correct prediction of doping induced changes in the electronic structure of BiFeO3.

  3. A comprehensive study on gain stabilization of Er-doped fiber amplifier in C-band with uniform fiber Bragg grating-pair

    Science.gov (United States)

    Yang, Jiuru; Ma, Yu; OuYang, Yunlun; Liu, Chunyu; Zhang, Jiaxiao

    2014-07-01

    Fiber grating-pair is one of the efficient methods for gain stabilization of erbium doped fiber amplifier (EDFA) but with a gain-reduction of signals, especially in C-band. In order to overcome it, in this article, we establish a configuration of EDFA based uniform fiber grating-pair and conduct a comprehensive study on gain stabilization by varying the reflectivity, center wavelength and 3dB bandwidth of grating, and by varying the channel number and pump power. The numerical results show that under the optimal parameters of grating the gain stabilization at 1550nm is +/-0.044dB with high gain and large dynamic range.

  4. Ultra Wide X-Band Microwave Imaging of Concealed Weapons and Explosives Using 3D-SAR Technique

    Directory of Open Access Journals (Sweden)

    P. Millot

    2015-01-01

    Full Text Available In order to detect and image concealed weapons and explosives, an electromagnetic imaging tool with its related signal processing is presented. The aim is to penetrate clothes and to find personal-born weapons and explosives under clothes. The chosen UWB frequency range covers the whole X-band. The frequency range is justified after transmission measurements of numerous clothes that are dry or slightly wet. The apparatus and the 3D near-field SAR processor are described. A strategy for contour identification is presented with results of some simulants of weapon and explosive. A conclusion is drawn on the possible future of this technique.

  5. NONLINEAR OPTICAL EFFECTS: Four-wave resonant parametric interaction with signal phase conjugation in a wide-band pump field

    Science.gov (United States)

    Barashkov, M. S.; Iskanderov, N. A.

    1987-08-01

    An analysis is made of the reduction of the fluctuations introduced in the intensity of the phase conjugate wave and of the reduction in the time for establishment of quasisteady conjugation conditions and in the relaxation time of the intensity of the conjugate wave after switching on of the pump fields in the case of stochastic excitation of a transition. It is shown that, in principle, it is possible to generate a narrow-band pump-induced component of the conjugate wave spectrum.

  6. First–principle calculation of the elastic, band structure, electronic states, and optical properties of Cu–doped ZnS nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Lahiji, Mohammadreza Askaripour, E-mail: m.a.lahijiii@gmail.com [Department of applied mathematics, Astaneh Ashrafieh Branch, Islamic Azad University, Astaneh Ashrafieh (Iran, Islamic Republic of); Ziabari, Ali Abdolahzadeh, E-mail: ali.abd.ziabari@gmail.com [Nano Research Lab, Lahijan Branch, Islamic Azad University, P.O. Box: 1616, Lahijan (Iran, Islamic Republic of)

    2016-11-15

    The structural, elastic, electronic, and optical properties of undoped and Cu–doped ZnS nanostructured layers have been studied in the zincblende (ZB) phase, by first–principle approach. Density functional theory (DFT) has been employed to calculate the fundamental properties of the layers using full–potential linearized augmented plane–wave (FPLAPW) method. Mechanical analysis revealed that the bulk modulus increases with the increase of Cu content. Cu doping was found to reduce the band gap value of the material. In addition, DOS effective mass of the electrons and heavy holes was evaluated. Adding Cu caused the decrement/increment of transmission/reflectance of nanolayers in the UV–vis region. The substitution by Cu increased the intensity of the peaks, and a slight red shift was observed in the absorption peak. Moreover, the static dielectric constant, and static refractive index increased with Cu content. The optical conductivity also followed a similar trend to that of the dielectric constants. Energy loss function of the modeled compounds was also evaluated. All calculated parameters were compared with the available experimental and other theoretical results.

  7. Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

    Science.gov (United States)

    Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

    2015-06-23

    A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

  8. Measurement of the nucleon structure function in the deep inelastic neutrino-iron scattering with a wide-band neutrino beam

    International Nuclear Information System (INIS)

    Flottmann, T.

    1982-01-01

    In this thesis the nucleon structure function xF 3 is determined from the inclusive measurement of the deep inelastic neutrino nucleon charged current interaction. The data were taken in the CERN wide band neutrino beam using the detector of the CERN-Dortmund-Heidelberg-Saclay collaboration. This detector serves at the same time as target, as hadron energy calorimeter and as muon spectrometer. One major aspect of this work was to study the possibility of using high statistics wide band beam data for structure function analysis. The systematic errors specific to this kind of beam are investigated. To obtain the differential cross sections about 100000 neutrino and 75000 antineutrino events in the energy range 20-200 GeV are analysed. The differential cross sections are normalized to the total cross sections, as measured in the narrow band beam by the same collaboration. The calculated structure function xF 3 shows significant deviations from scaling. These scaling violations are compared quantitatively with the predictions of quantum chromodynamics. (orig.) [de

  9. The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

    International Nuclear Information System (INIS)

    Zhang, Shiyan; Mei, Dajiang; Du, Xin; Lin, Zheshuai; Zhong, Junbo; Wu, Yuandong; Xu, Jingli

    2016-01-01

    Ag 1−x Ga 1−x Si x Se 2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe 4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe 4 is composed of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ga) tetrahedra. AgGaSiSe 4 is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe 4 and the value is 0.33 eV larger than that of Ag 3 Ga 3 SiSe 8 (2.30 eV). - Graphical abstract: The Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe 4 was synthesized for the first time. AgGaSiSe 4 crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe 4 . • AgGaSiSe 4 crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe 4 is enlarged compared with Ag 3 Ga 3 SiSe 8 .

  10. Graphene-doped carbon/Fe3O4 porous nanofibers with hierarchical band construction as high-performance anodes for lithium-ion batteries

    International Nuclear Information System (INIS)

    He, Jianxin; Zhao, Shuyuan; Lian, Yanping; Zhou, Mengjuan; Wang, Lidan; Ding, Bin; Cui, Shizhong

    2017-01-01

    Highlights: • GN@C/Fe 3 O 4 are synthesized via in-situ electrospinning and thermal treatment. • GN@C/Fe 3 O 4 show unique dark/light banding with a hierarchical porous structure. • Doped graphene induces a uniform distribution of smaller size Fe 3 O 4 nanoparticles. • Doped graphene provides more active sites and accommodate the volume change. • GN@C/Fe 3 O 4 electrode displays a reversible capacity of 872 mAh/g after 100 cycles. - Abstract: Porous graphene-doped carbon/Fe 3 O 4 (GN@C/Fe 3 O 4 ) nanofibers are synthesized via in-situ electrospinning and subsequent thermal treatment for use as lithium-ion battery anode materials. A polyacrylonitrile (PAN)/polymethyl methacrylate (PMMA) solution containing ferric acetylacetone and graphene oxide nanosheets is used as the electrospinning precursor solution. The resulting porous GN@C/Fe 3 O 4 nanofibers show unique dark/light banding and a hierarchical porous structure. These nanofibers have a Brunauer–Emmett–Teller (BET) specific surface area of 323.0 m 2 /g with a total pore volume of 0.337 cm 3 /g, which is significantly greater than that of a sample without graphene and C/Fe 3 O 4 nanofibers. The GN@C/Fe 3 O 4 nanofiber electrode displays a reversible capacity of 872 mAh/g at a current density of 100 mA/g after 100 cycles, excellent cycling stability, and superior rate capability (455 mA/g at 5 A/g). The excellent performance of porous GN@C/Fe 3 O 4 is attributed to the material’s unique structure, including its striped topography, hierarchical porous structure, and inlaid flexible graphene, which not only provides more accessible active sites for lithium-ion insertion and high-efficiency transport pathways for ions and electrons, but also accommodates the volume change associated with lithium insertion/extraction. Moreover, the zero-valent iron and graphene in the porous nanofibers enhance the conductivity of the electrodes.

  11. Widely Tunable 4th Order Switched Gm -C Band-Pass Filter Based on N-Path Filters

    NARCIS (Netherlands)

    Darvishi, M.; van der Zee, Ronan A.R.; Klumperink, Eric A.M.; Nauta, Bram

    2012-01-01

    Abstract—A widely tunable 4th order BPF based on the subtraction of two 2nd order 4-path passive-mixer filters with slightly different center frequencies is proposed. The center frequency of each 4-path filter is slightly shifted relative to its clock frequency (one upward and the other one

  12. A Wide-Band High-Gain Compact SIS Receiver Utilizing a 300-μW SiGe IF LNA

    Science.gov (United States)

    Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.

    2017-06-01

    Low-power low-noise amplifiers integrated with superconductor-insulator-superconductor (SIS) mixers are required to enable implementation of large-scale focal plane arrays. In this work, a 220-GHz SIS mixer has been integrated with a high-gain broad-band low-power IF amplifier into a compact receiver module. The low noise amplifier (LNA) was specifically designed to match to the SIS output impedance and contributes less than 7 K to the system noise temperature over the 4-8 GHz IF frequency range. A receiver noise temperature of 30-45 K was measured for a local oscillator frequency of 220 GHz over an IF spanning 4-8 GHz. The LNA power dissipation was only 300-μW. To the best of the authors' knowledge, this is the lowest power consumption reported for a high-gain wide-band LNA directly integrated with an SIS mixer.

  13. Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

    Directory of Open Access Journals (Sweden)

    G. Baskaran

    2006-01-01

    Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

  14. A Porous Perchlorate-Doped Polypyrrole Nanocoating on Nickel Nanotube Arrays for Stable Wide-Potential-Window Supercapacitors.

    Science.gov (United States)

    Chen, Gao-Feng; Li, Xian-Xia; Zhang, Li-Yi; Li, Nan; Ma, Tian Yi; Liu, Zhao-Qing

    2016-09-01

    A bottom-up synthetic strategy is developed to fabricate a highly porous wave-superposed perchlorate-doped polypyrrole nanocoating on nickel nanotube arrays. The delicate nanostructure and the unique surface chemistry synergistically endow the obtained electrode with revealable pseudocapacitance, large operating potential window, and excellent cycling stability, which are highly promising for both asymmetric and symmetric supercapacitors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Electronic Band Structure of BaCo_{2}As_{2}: A Fully Doped Ferropnictide Analog with Reduced Electronic Correlations

    Directory of Open Access Journals (Sweden)

    N. Xu

    2013-01-01

    Full Text Available We report an investigation with angle-resolved photoemission spectroscopy of the Fermi surface and electronic band structure of BaCo_{2}As_{2}. Although its quasinesting-free Fermi surface differs drastically from that of its Fe-pnictide cousins, we show that the BaCo_{2}As_{2} system can be used as an approximation to the bare unoccupied band structure of the related BaFe_{2-x}Co_{x}As_{2} and Ba_{1-x}K_{x}Fe_{2}As_{2} compounds. However, our experimental results, in agreement with dynamical-mean-field-theory calculations, indicate that electronic correlations are much less important in BaCo_{2}As_{2} than in the ferropnictides. Our findings suggest that this effect is due to the increased filling of the electronic 3d shell in the presence of significant Hund’s exchange coupling.

  16. Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242

    Science.gov (United States)

    1992-01-01

    AND PROPERTIES OF WIDE BAND-GAP Il-VI STRAINED- LAYER SUPERLATTICE 227 Hailong Wang. Jie Cui. Aidong Shen. Liang Xu, Yunliang Chen. and Yuhua Shen IN...WANG JIE CUI AIDONG SHEN LIANG XU YUNLIANG CHEN AND YUHUA SHEN Shanghai Institute of Optics and Fine Mechanics, Academia Sinica P.O.Box 800-216 Shanghai...He Zujou, Cao Huazhe, Su Wuda, Chen Zhongcai, Zhon Feng and Wang Erguang, Thin Solid Films, 139,261(1986). 22) Xin Li and T.L.Tansley, J.AppI.Phys

  17. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  18. Effect of MnO2 doping and temperature treatment on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics

    International Nuclear Information System (INIS)

    Ghazali, M. S. M.; Abdullah, W. R. W.; Zakaria, A.; Kamari, H. M.; Rizwan, Z.

    2016-01-01

    In this study, the optical band-gap energy ( Eg ) was investigated with respect to MnO 2 and sintering temperatures on ZnO based varistor ceramics. Eg of the ceramic (99-x) mol% ZnO + 0.5 mol% Bi 2 O 3 + 0.5 mol% TiO 2 + × MnO 2 where × = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spectrophotometer. The samples was prepared through solid-state route and sintered at the sintering temperature from 1110, 1140 and 1170 °C for 45 and 90 min in open air. At no doping of MnO 2 , the values of Eg are 2.991 ± 0.001, 2.989 ± 0.001 eV for 45 and 90 min sintering time; respectively. Eg was decreased to 2.192 ± 0.001 eV at 1140 °C at 45 min sintering time. Similar result of Eg was observed at longer heat treatment. Further addition of dopant causing the Eg decreases rapidly to 2.099 and 2.106 ± 0.001 eV at 45 and 90 min sintering time; respectively. XRD analysis indicates that there is hexagonal ZnO and secondary phases, Zn 2 MnO 4 , Bi 4 Ti 3 O 12 and Zn 2 Ti 3 O 8 . The relative density of the sintered ceramics decreased or remain constant with the increase of MnO 2 concentration for 45 min sintering time, however, further prolong sintering time; the relative density decreases form 90.25 to 88.35%. This indicates the pores are increasing with the increase of heat treatment. The variation of sintering temperatures to the optical band gap energy of based ZnO varistor doped with MnO 2 due to the formation of interface states. (paper)

  19. Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

    Energy Technology Data Exchange (ETDEWEB)

    Dwivedi, G. D.; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L. [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Joshi, Amish G. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Shiv; Ghosh, A. K. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2016-04-25

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  20. Variation in band gap of lanthanum chromate by transition metals doping LaCr{sub 0.9}A{sub 0.1}O{sub 3} (A:Fe/Co/Ni)

    Energy Technology Data Exchange (ETDEWEB)

    Naseem, Swaleha, E-mail: wasiamu@gmail.com; Khan, Wasi, E-mail: wasiamu@gmail.com; Saad, A. A., E-mail: wasiamu@gmail.com; Shoeb, M., E-mail: wasiamu@gmail.com; Ahmed, Hilal, E-mail: wasiamu@gmail.com; Naqvi, A. H. [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z.H. College of Engg. and Technology, Aligarh Muslim University, Aligarh-202002 (India); Husain, Shahid [Department of Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2014-04-24

    Transition metal (Fe, Co, Ni) doped lanthanum chromate (LaCrO{sub 3}) nanoparticles (NPs) were prepared by gel combustion method and calcinated at 800°C. Microstructural studies were carried by XRD and SEM/EDS techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible and photoluminescence techniques. The energy band gap was calculated and the variation was observed with the doping of transition metal ions. Photoluminescence spectra show the emission peak maxima for the pure LaCrO{sub 3} at about 315 nm. Influence of Fe, Co, Ni doping was studied and compared with pure lanthanum chromate nanoparticles.

  1. Recharging processes, radiation induced strain and changes of OH{sup -} bands under H{sup +} ion implantation in Ti doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. [Crystal Growth Centre, Anna University, Chennai 600025, Tamil Nadu (India); Moorthy Babu, S., E-mail: smoorthybabu@yahoo.co [Crystal Growth Centre, Anna University, Chennai 600025, Tamil Nadu (India); Bhaumik, I.; Ganesamoorthy, S.; Karnal, A.K. [LMDD Division, RRCAT, Indore 452013, Madhya Pradesh (India); Kumar, Praveen; Rodrigues, G.O.; Sulania, I.; Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg 110067, New Delhi (India); Pandey, A.K.; Raman, R. [Solid State Physics Laboratory, Timarpur 110 054, New Delhi (India)

    2010-01-15

    A systematic analysis of variations in structural and optical characteristics of Z-cut plates of titanium doped congruent lithium niobate single crystals implanted with 120 keV proton beam at various fluences of 10{sup 15}, 10{sup 16} and 10{sup 17} protons/cm{sup 2} is presented. Through, high resolution X-ray diffraction, atomic force microscopy, Fourier transform infrared and UV-visible-NIR analysis of congruent lithium niobate, the correlation of properties before and after implantation are discussed. HRXRD (0 0 6) reflection by Triple Crystal Mode shows that both tensile and compressive strain peak are produced by the high fluence implantation. A distinct tensile peak was observed from implanted region for a fluence of 10{sup 16} protons/cm{sup 2}. AFM micrographs indicate mountain ridges, bumps and protrusions on target surface on implantation. UV-visible-NIR spectra reveal an increase in charge transfer between Ti{sup 3+}/Ti{sup 4+} and ligand oxygen for implantation with 10{sup 15} protons/cm{sup 2}, while spectra for higher fluence implanted samples show complex absorption band in the region from 380-1100 nm. Variations of OH{sup -} stretching vibration mode were observed for cLN Pure, cLNT2% virgin, and implanted samples with FTIR spectra. The concentration of OH{sup -} ion before and after implantation was calculated from integral absorption intensity. The effect of 120 keV proton implantation induced structural, surface and optical studies were correlated.

  2. Development of an Internally-Calibrated Wide-Band Airborne Microwave Radiometer to Provide High-Resolution Wet-Tropospheric Path Delay Measurements for SWOT (HAMMR - High-frequency Airborne Microwave and Millimeter-wave Radiometer)

    Data.gov (United States)

    National Aeronautics and Space Administration — Development of an Internally-Calibrated Wide-Band Airborne Microwave Radiometer to Provide High-Resolution Wet-Tropospheric Path Delay Measurements for SWOT (HAMMR -...

  3. Analysis of photonic band gap in dispersive properties of tunable three-dimensional photonic crystals doped by magnetized plasma

    International Nuclear Information System (INIS)

    Zhang HaiFeng; Liu Shaobin; Yang Huan; Kong Xiangkun

    2013-01-01

    In this paper, the magnetooptical effects in dispersive properties for two types of three-dimensional magnetized plasma photonic crystals (MPPCs) containing homogeneous dielectric and magnetized plasma with diamond lattices are theoretically investigated for electromagnetic (EM) wave based on plane wave expansion (PWE) method, as incidence EM wave vector is parallel to the external magnetic field. The equations for two types of MPPCs with diamond lattices (dielectric spheres immersed in magnetized plasma background or vice versa) are theoretically deduced. The influences of dielectric constant, plasma collision frequency, filling factor, the external magnetic field, and plasma frequency on the dispersive properties for both types of structures are studied in detail, respectively, and some corresponding physical explanations are also given. From the numerical results, it has been shown that the photonic band gaps (PBGs) for both types of MPPCs can be manipulated by plasma frequency, filling factor, the external magnetic field, and the relative dielectric constant of dielectric, respectively. Especially, the external magnetic field can enlarge the PBG for type-2 structure (plasma spheres immersed in dielectric background). However, the plasma collision frequency has no effect on the dispersive properties of two types of three-dimensional MPPCs. The locations of flatbands regions for both types of structures cannot be tuned by any parameters except for plasma frequency and the external magnetic field. The analytical results may be informative and of technical use to design the MPPCs devices.

  4. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    Science.gov (United States)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  5. Improved spectral absorption coefficient grouping strategy of wide band k-distribution model used for calculation of infrared remote sensing signal of hot exhaust systems

    Science.gov (United States)

    Hu, Haiyang; Wang, Qiang

    2018-07-01

    A new strategy for grouping spectral absorption coefficients, considering the influences of both temperature and species mole ratio inhomogeneities on correlated-k characteristics of the spectra of gas mixtures, has been deduced to match the calculation method of spectral overlap parameter used in multiscale multigroup wide band k-distribution model. By comparison with current spectral absorption coefficient grouping strategies, for which only the influence of temperature inhomogeneity on the correlated-k characteristics of spectra of single species was considered, the improvements in calculation accuracies resulting from the new grouping strategy were evaluated using a series of 0D cases in which radiance under 3-5-μm wave band emitted by hot combustion gas of hydrocarbon fuel was attenuated by atmosphere with quite different temperature and mole ratios of water vapor and carbon monoxide to carbon dioxide. Finally, evaluations are presented on the calculation of remote sensing thermal images of transonic hot jet exhausted from a chevron ejecting nozzle with solid wall cooling system.

  6. A search for neutral, heavy particles decaying to a neutriNO1and a single photon at the SPS wide-band neutrino beam

    CERN Document Server

    Steele, D M

    1996-01-01

    A search is performed for single, isolated photons from X 0 decay, where X 0 represents either a neutrino excited state or an unknown, neutral, massive particle produced in a rare pi+ decay along the neutrino beam line as hypothesized by the KARMEN Collaboration[1] as a possible solution to their anomalous time spectra for pi+ -> u+ + vu. The analysis is performed using data from the NOMAD (WA96) experiment in the wide-band vu beam using the SPS accelerator situated at the European Center for Nuclear Research near Geneva, Switzerland. Out of a flux of vu resulting from 6.13 x 10*18 protons on target, seven events pass all cuts. The relative abundance of these events is entirely consistent with those expected from neutrino interactions in the detector. Upper limits are set at 90% condence level for the production rate of this particle as a function of its lifetime.

  7. Effect of Y2O3 Content on Microstructure of Gradient Bioceramic Composite Coating Produced by Wide-Band Laser Cladding

    Institute of Scientific and Technical Information of China (English)

    Liu Qibin; Zou Jianglong; Zheng Min; Dong Chuang

    2005-01-01

    To eliminate thermal stress and cracks in the process of laser cladding, a kind of bioceramic coating with gradient compositional design was prepared on the surface of Ti alloy by using wide-band laser cladding. And effect of Y2O3 content on gradient bioceramic composite coating was studied. The experimental results indicate that adding rare earth can refine grain. Different rare earth contents affect formation of HA and β-TCP in bioceramic coating. When the content of rare earth ranges from 0.4% to 0.6%, the active extent of rare earth in synthesizing HA and β-TCP is the best, which indicates that "monosodium glutamate" effect of rare earth plays a dominant role. However, when rare earth content is up to 0.8%, the amount of synthesizing HA and β-TCP in coating conversely goes down, which demonstrates that rare earth gradually losts its catalysis in manufacturing HA and β-TCP.

  8. Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

    KAUST Repository

    Wolf, Jannic Sebastian; Cruciani, Federico; El Labban, Abdulrahman; Beaujuge, Pierre

    2015-01-01

    We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

  9. Slice-based supine to standing postured deformation for chinese anatomical models and the dosimetric results by wide band frequency electromagnetic field exposure: Morphing

    International Nuclear Information System (INIS)

    Wu, T.; Tan, L.; Shao, Q.; Li, Y.; Yang, L.; Zhao, C.; Xie, Y.; Zhang, S.

    2013-01-01

    Digital human models are frequently obtained from supine-postured medical images or cadaver slices, but many applications require standing models. This paper presents the work of reconstructing standing Chinese adult anatomical models from supine postured slices. Apart from the previous studies, the deformation works on 2-D segmented slices. The surface profile of the standing posture is adjusted by population measurement data. A non-uniform texture amplification approach is applied on the 2-D slices to recover the skin contour and to redistribute the internal tissues. Internal organ shift due to postures is taken into account. The feet are modified by matrix rotation. Then, the supine and standing models are utilised for the evaluation of electromagnetic field exposure over wide band frequency and different incident directions. . (authors)

  10. Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

    KAUST Repository

    Wolf, Jannic Sebastian

    2015-05-27

    We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b\\']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

  11. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  12. Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites.

    Science.gov (United States)

    Zhao, Wenjun; Sun, Ying; Liu, Yufei; Shi, Kewen; Lu, Huiqing; Song, Ping; Wang, Lei; Han, Huimin; Yuan, Xiuliang; Wang, Cong

    2018-01-01

    Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE) behaviors with the coefficients of thermal expansion (CTE) of -285.23 × 10 -6 K -1 (192-305 K) and -1167.09 × 10 -6 K -1 (246-305 K) have been obtained in Mn 0.90 Fe 0.10 NiGe and MnNi 0.90 Fe 0.10 Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn 0.92 Fe 0.08 NiGe/ x %Cu, the CTE gradually changes from -64.92 × 10 -6 K -1 (125-274 K) to -4.73 × 10 -6 K -1 (173-229 K) with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM) state into ferromagnetic (FM) state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

  13. Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites

    Directory of Open Access Journals (Sweden)

    Wenjun Zhao

    2018-02-01

    Full Text Available Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE behaviors with the coefficients of thermal expansion (CTE of −285.23 × 10−6 K−1 (192–305 K and −1167.09 × 10−6 K−1 (246–305 K have been obtained in Mn0.90Fe0.10NiGe and MnNi0.90Fe0.10Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn0.92Fe0.08NiGe/x%Cu, the CTE gradually changes from −64.92 × 10−6 K−1 (125–274 K to −4.73 × 10−6 K−1 (173–229 K with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM state into ferromagnetic (FM state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

  14. Thermoelectric properties of doped BaHfO_3

    International Nuclear Information System (INIS)

    Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

    2016-01-01

    We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

  15. Spark plasma sintering of bulk SrAl2O4-Sr3Al2O6 eutectic glass with wide-band optical window

    Science.gov (United States)

    Liu, Jiaxi; Lu, Nan; He, Gang; Li, Xiaoyu; Li, Jianqiang; Li, Jiangtao

    2018-06-01

    SrAl2O4-Sr3Al2O6 eutectic glass was prepared by using an aerodynamic levitator equipped with a CO2 laser device. A bulk transparent amorphous sample was obtained by the spark plasma sintering (SPS) of the prepared eutectic glass. XRD, a UV–vis-NIR spectrophotometer and FT-IR were employed to characterize the phase evolution and optical properties. The results show that the bulk SrAl2O4-Sr3Al2O6 samples fabricated by the containerless process and SPS between 852 °C–857 °C were fully amorphous. The amorphous sample has a wide transparent window between 270 nm and 6.2 μm. The average refractive index in the visible light region is 1.680 and the Abbe number is 27.4. The prepared bulk SrAl2O4-Sr3Al2O6 eutectic glass with the wide-band optical window may be a promising candidate for optical applications.

  16. Synthesis and characterization of Mn2+-doped ZnS nanoparticles

    Indian Academy of Sciences (India)

    Keywords. Nanoparticles; nanocomposite; Mn2+-doped ZnS; annealing; X-ray diffrac- tion; FTIR; ultra violet. ... is an important wide band gap semiconductor, has attracted much attention owing to its wide applications ... semiconductor nanoparticles ZnS : Mn2+ is used as phosphors and also in thin film electroluminescent ...

  17. Effects of phosphorus-doping on energy band-gap, structural, surface, and photocatalytic characteristics of emulsion-based sol-gel derived TiO{sub 2} nano-powder

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh, Ibram, E-mail: ibramganesh@arci.res.in

    2017-08-31

    Highlights: • Reported a novel route to synthesize high specific surface area P-doped TiO{sub 2} nano-powder photocatalysts. • Established methylene blue dye-sensitization mechanism of TiO{sub 2} photocatalyst. • Established the effects of methylene blue adsorption on the surface, structural and photocatalytic activity of P-doped TiO{sub 2}. • Established true quantum efficiency determination method for TiO{sub 2} photocatalysis. - Abstract: Different amounts of phosphorus (P)-doped TiO{sub 2} (PDT) nano-powders (P = 0–10 wt.%) were synthesized by following a new emulsion-based sol-gel (EBSG) route and calcined at 400 °C–800 °C for 6 h. These calcined PDT powders were then thoroughly characterized by means of XRD, XPS, SEM, FT-IR, FT-Raman, DRS, BET surface area, zeta-potential, cyclic-voltammetry and photocatalytic evaluation using methylene blue (MB) as a model-pollutant and established the effects of phosphorous doping on structural, surface, band-gap energy, and photocatalytic characteristics of TiO{sub 2} nano-powder formed in EBSG route. The characterization results suggest that the EBSG derived TiO{sub 2} nano-powder after calcination at 400 °C for 6 h is in the form of anatase phase when it was doped with <8 wt.% P, and it is in the amorphous state when doped with >8 wt.% P. Furthermore, these EBSG derived PDT powders own high negative zeta-potentials, high specific surface areas (up to >250 m{sup 2}/g), and suitable band-gap energies (<3.34 eV). Surprisingly, these PDT powders exhibit very high MB adsorption (up to 50%) from its aqueous 0.01 mM, 0.02 mM and 0.03 mM solutions during 30 min stirring in the dark, whereas, the commercial Degussa P-25 TiO{sub 2} nano-powder shows no adsorption. Among various photocatalysts investigated in this study, the 1 wt.% P-doped TiO{sub 2} nano-powder formed in EBSG route exhibited the highest photocatalytic activity for MB degradation reaction.

  18. Usefulness of contrast-enhanced wide-band Doppler ultrasonograpy to diagnose alveolar echinococcosis of the liver and evaluate the effect of the treatment

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Yasuaki; Fujimoto, Yoshinori E-mail: yfujimot@asahikawa-med.ac.jp; Hosoki, Yayoi; Suzuki, Masako; Inoue, Mitsutaka; Sakurai, Shinobu; Ohtake, Takaaki; Ohhira, Masumi; Saito, Hiroyuki; Kohgo, Yutaka

    2003-12-01

    Alveolar echinococcosis is a rare parasitic disease caused by Echinococcus multicularis and most commonly involves the liver. Early diagnosis and accurate evaluation of the effect of the treatment are essential to improve the prognosis of patients with alveolar echinococcosis of the liver (AEL). The aim of this study was to demonstrate the characteristic imaging of AEL by contrast-enhanced Dynamic Flow (CE-DF) employing a wide-band Doppler technique for the diagnosis and the accurate evaluation of the effect of the treatment. Four patients with five AEL lesions before treatment or during medication were examined by CE-DF. All of the five AEL lesions examined by CE-DF revealed a defect with an irregular and distinct margin like a worm-eaten defect appearance, which was never observed on other hepatic lesions, in liver perfusion image during post-vascular phase. In addition, CE-DF made it possible to measure the size of AEL lesions accurately because the margin was detected distinctly. These data suggest that CE-DF is clinically useful for the diagnosis of AEL and the evaluation of the effect of the treatment.

  19. Wide-band operation of quasi-optical distributed superconductor/insulator/superconductor mixers with epitaxial NbN/AlN/NbN junctions

    International Nuclear Information System (INIS)

    Kohjiro, S; Shitov, S V; Wang, Z; Uzawa, Y; Miki, S; Kawakami, A; Shoji, A

    2004-01-01

    For the optimum design of integrated receivers operating above the gap frequency of Nb, we have designed, fabricated and tested NbN-based quasi-optical superconductor/insulator/superconductor (SIS) mixers. The mixer chip incorporates a resonant half-wavelength epitaxial NbN/AlN/NbN junction, a twin-slot antenna and their coupling circuits. We adopted two kinds of coupling circuit between the antenna and the SIS junction: one is an in-phase feed with a length of 95 μm and the other is an anti-phase feed of 30 μm length. It was found that the anti-phase mixer reveals a 3 dB bandwidth of 43% of the centre frequency; the uncorrected double-sideband receiver noise temperature T RX = 691 K at 0.91 THz and T RX = 844 K at 0.80 THz, while 17% and T RX = 1250 K at 0.79 THz for the in-phase version. Possible reasons for this difference are discussed, which could be transmission loss and its robustness with respect to the variation of junction parameters. These experimental results suggest the NbN-based distributed mixer with the anti-phase feed is a better candidate for wide-band integrated receivers operating above 0.7 THz

  20. Blue and red emission in wide band gap BaZrO{sub 3}:Yb{sup 3+},Tm{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Borja-Urby, R. [Centro de Investigaciones en Optica, A. C., C. P. 37150 Leon, Gto. (Mexico); Diaz-Torres, L.A., E-mail: ditlacio@cio.mx [Centro de Investigaciones en Optica, A. C., C. P. 37150 Leon, Gto. (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A. P. 1-1010, Queretaro 76000 (Mexico); Vega-Gonzalez, M. [Centro de Geociencias-Universidad Nacional Autonoma de Mexico, A. P. 1-1010, Queretaro 76000 (Mexico); Angeles-Chavez, C. [Instituto Mexicano del Petroleo, Programa de Ingenieria Molecular, Cd. Mexico D.F. 07730 (Mexico)

    2010-10-25

    Under NIR excitation at 967 intense blue and red photoluminescence (PL) emissions are observed at room temperature in codoped Tm{sup 3+}-Yb{sup 3+} barium zirconate (BaZrO{sub 3}:Yb,Tm) powders. Powders were prepared by a simple hydrothermal method, and present a wide band gap that depends on the total rare earth content due to the degree of disorder induced in the BaZrO{sub 3} lattice by the substitution of the rare earth ions. Rietveld refinements of the XRD patterns indicated the presence of primary nanocrystallites with sizes between 50 and 70 nm depending on the Tm{sup 3+} content. Scanning transmission electron microscopy (STEM) shows that these primary particles self-aggregated in larger secondary particles which present a regular morphology with sizes around 1 {mu}m. The intense blue and red PL emissions in BaZrO{sub 3} powders under 967 nm excitation are governed by energy transfer processes from Yb{sup 3+} ions to Tm{sup 3+} ions and crossrelaxation among Tm{sup 3+} ions.

  1. Enhanced surface area, high Zn interstitial defects and band gap reduction in N-doped ZnO nanosheets coupled with BiVO{sub 4} leads to improved photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Sonal [Deen Dayal Upadhyaya College, Dwarka, University of Delhi, New Delhi 110078 (India); Sharma, Rishabh, E-mail: rishabh.rammstien@gmail.com [Thin Film Laboratory, Department of Physics, Indian Institute of Technology, New Delhi 110016 (India); Mehta, Bodh Raj [Thin Film Laboratory, Department of Physics, Indian Institute of Technology, New Delhi 110016 (India)

    2017-07-31

    Highlights: • In this study, we report novel nitrogen doped ZnO (nanosheet)/BiVO{sub 4} nanocomposite with enhanced visible light photocatalytic activity tested on methylene blue dye. • In a typical composite synthesis process, individual metal oxides synthesized by chemical route were mixed through ultrasonication followed by annealing at the temperature of 400 °C. • To understand mechanism of action we carried out XRD, TEM, UV–vis spectroscopy, XPS, BET & PL of the samples. • Enhancement in photocatalytic performance of the composite was due to increased light absorption due to band gap reduction and formation intermediate band. • Also, charge exchange as per Z-scheme at the hetrojunction between N-ZnO and BiVO{sub 4} resulted in reduced charge recombination rate which is further responsible for enhancement in photocatalytic activity. - Abstract: For the first time, a series of Nitrogen-doped-ZnO nanosheet coupled with BiVO{sub 4} (N-ZnO/BiVO{sub 4}) heterojunctioned photocatalysts have been synthesized. The new N-ZnO/BiVO{sub 4} material has been prepared via a simple and effective method of precipitation followed by high temperature annealing process. The photocatalytic activities of the N-ZnO/BiVO{sub 4} composites were evaluated for the degradation of methylene blue (MB) a common organic pollutant under visible-light irradiation. The results revealed that photocatalytic activity of the coupled system was directly influenced by the percentage amount of BiVO{sub 4} in N-ZnO which affected the available exposed surface area for photoreactions. 30% N-ZnO/BiVO{sub 4} system exhibited remarkable performance than 10%N-ZnO/BiVO{sub 4}, 50%N-ZnO/BiVO{sub 4}, and also to their pristine counterparts. The composite demonstrated the degradation efficiency of 90% in 90 min which is 1.76 times the efficiency of pure ZnO for same time duration. This pronounced photocatalytic effect is ascribed to the reduced band gap and lowered recombination rate of ZnO due to

  2. Quantitative analysis of UV excitation bands for red emissions in Pr3+-doped CaTiO3, SrTiO3 and BaTiO3 phosphors by peak fitting

    International Nuclear Information System (INIS)

    Fujiwara, Rei; Sano, Hiroyuki; Shimizu, Mikio; Kuwabara, Makoto

    2009-01-01

    A quantitative spectral analysis of the ultraviolet (UV) broad excitation bands, which are located in the range 300-400 nm, for red emissions at around 610 nm in Pr-doped CaTiO 3 , SrTiO 3 :Al and BaTiO 3 :Mg phosphors has been carried out using a peak fitting technique. The obtained results demonstrate that the UV broad band of CaTiO 3 :Pr consists of four primary excitation bands centered around 330, 335, 365 and 380 nm and those of both SrTiO 3 :Al and BaTiO 3 :Mg consist of three primary bands centered around 310, 345 and 370 nm. Based on the behavior patterns and the values of the respective primary excitation bands' parameters, i.e. center gravity (λ top ), maximum height (I max ) and full-width at half-maximum (FWHM), the UV-to-red relaxation processes in these titanate phosphors can be explained to be essentially the same, except for the existence of an additional relaxation pathway via electron-trap states in CaTiO 3 :Pr, which gives a characteristic shape of its UV excitation spectrum in the wavelength range of >360 nm

  3. Dielectric functions and energy band gap variation studies of manganese doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films using spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Gautam, Prikshit, E-mail: pgautam.phy.du@gmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Department of Physics Kirori Mal College, University of Delhi, Delhi 110007 (India); Sachdeva, Anupama [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Singh, Sushil K. [Functional Materials Division, SSPL, Timarpur, New Delhi 110054 (India); Tandon, R.P., E-mail: ram_tandon@hotmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India)

    2014-12-25

    Highlights: • Mn Doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films prepared by chemical solution deposition technique. • Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. • The optical properties of BLT and Mn modified BLT thin films were investigated by using spectroscopic ellipsometry. • A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions. • The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content. - Abstract: Single phase polycrystalline Mn-modified Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films were prepared by chemical solution deposition method using spin coating technique on Pt/Ti/SiO{sub 2}/Si (1 0 0) substrates. Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. The optical properties of BLT and Mn modified BLT thin films were investigated at room temperature by using spectroscopic ellipsometry (SE) in the energy range 0.72–6.2 eV. A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions of these films where a shift to the lower energy side with Mn doping is seen. The full width at half maxima (FWHM) (Γ) of dielectric function is found to increase with Mn doping. This increase in FWHM may be attributed to the increase in the trap density in forbidden band which consequently decreases the value of direct optical band gap (Eg{sup d}). The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content in the studied composition range. This decrease in Eg{sup d} with doping may be attributed to the variation in the defect concentration present in the structure.

  4. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  5. Promotion of redox and stability features of doped Ce–W–Ti for NH{sub 3}-SCR reaction over a wide temperature range

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Kun [State Key Laboratory for Oxo Synthesis and Selective Oxidation, National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key laboratory of Oil & Gas Fine Chemical, Ministry of Education, College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi 830046 (China); Han, Weiliang; Lu, Gongxuan [State Key Laboratory for Oxo Synthesis and Selective Oxidation, National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Lu, Jiangyin, E-mail: jiangyinlu6410@163.com [Key laboratory of Oil & Gas Fine Chemical, Ministry of Education, College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi 830046 (China); Tang, Zhicheng, E-mail: tangzhicheng@licp.cas.cn [State Key Laboratory for Oxo Synthesis and Selective Oxidation, National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhen, Xinping [Key laboratory of Oil & Gas Fine Chemical, Ministry of Education, College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi 830046 (China)

    2016-08-30

    Graphical abstract: In this study, different transition metals were introduced into Ce–W–Ti catalyst in order to promote the low temperature activity. The Cu/Ce–W–Ti catalyst prepared via a co-precipitation method displayed more excellent performance in the wide temperature range (260–400 °C). - Highlights: • Redox ability of Ce–W–Ti was enhanced by introduction of CuO. • The optimum catalyst provided high activity and broad operation window. • Cu/Ce–W–Ti presents an adequate tolerance to SO{sub 2} and hydrothermal aging. - Abstract: In this study, transition metals Co, Mn, and Cu were introduced into a Ce–W–Ti catalyst to promote low-temperature catalytic activity. Among these metal-modified M/Ce–W–Ti catalysts (M represents Co, Mn, or Cu), the Cu/Ce–W–Ti catalyst with an optimized Cu content of 5 wt.% exhibited more than 90% conversion of nitrogen oxide (NO{sub x}) in the selective catalytic reduction by NH{sub 3} over a wide temperature range (260–400 °C). This catalyst likewise exhibited higher resistance to SO{sub 2} gas and water vapor under severe test conditions. On the basis of the characterization results by powder X-ray diffraction and X-ray photoelectron spectroscopy, we concluded that the superior catalytic properties of the Cu/Ce–W–Ti catalyst could be attributed to the highly dispersed Cu species, which increased the contents of Ce{sup 3+} species and adsorbed oxygen species in the catalysts. In addition, the NH{sub 3} temperature-programmed desorption results demonstrated that the Cu species doped into the Ce–W–Ti catalysts optimized surface acid content.

  6. Two-phase jet impingement cooling for high heat flux wide band-gap devices using multi-scale porous surfaces

    International Nuclear Information System (INIS)

    Joshi, Shailesh N.; Dede, Ercan M.

    2017-01-01

    Highlights: • Jet impingement with phase change on multi-scale porous surfaces is investigated. • Porous coated flat, pin-fin, open tunnel, and closed tunnel structures are studied. • Boiling curve, heat transfer coefficient, and pressure drop metrics are reported. • Flow visualization shows vapor removal from the surface is a key aspect of design. • The porous coated pin-fin surface exhibits superior two-phase cooling performance. - Abstract: In the future, wide band-gap (WBG) devices such as silicon carbide and gallium nitride will be widely used in automotive power electronics due to performance advantages over silicon-based devices. The high heat fluxes dissipated by WBG devices pose extreme cooling challenges that demand the use of advanced thermal management technologies such as two-phase cooling. In this light, we describe the performance of a submerged two-phase jet impingement cooler in combination with porous coated heat spreaders and multi-jet orifices. The cooling performance of four different porous coated structures was evaluated using R-245fa as the coolant at sub-cooling of 5 K. The results show that the boiling performance of a pin-fin heat spreader is the highest followed by that for an open tunnel (OPT), closed tunnel (CLT), and flat heat spreader. Furthermore, the flat heat spreader demonstrated the lowest critical heat flux (CHF), while the pin-fin surface sustained a heat flux of 218 W/cm 2 without reaching CHF. The CHF values of the OPT and CLT surfaces were 202 W/cm 2 and 194 W/cm 2 , respectively. The pin-fin heat spreader has the highest two-phase heat transfer coefficient of 97,800 W/m 2 K, while the CLT surface has the lowest heat transfer coefficient of 69,300 W/m 2 K, both at a heat flux of 165 W/cm 2 . The variation of the pressure drop of all surfaces is similar for the entire range of heat fluxes tested. The flat heat spreader exhibited the least pressure drop, 1.73 kPa, while the CLT surface had the highest, 2.17 kPa at a

  7. Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

    Science.gov (United States)

    VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

    1999-01-01

    We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

  8. Wide band gap materials and devices for NO{sub x}, H{sub 2} and O{sub 2} gas sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Majdeddin

    2008-01-22

    In this thesis, field effect gas sensors (Schottky diodes, MOS capacitors, and MOSFET transistors) based on wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN), as well as resistive gas sensors based on indium oxide (In{sub 2}O{sub 3}), have been developed for the detection of reducing gases (H{sub 2}, D{sub 2}) and oxidising gases (NO{sub x}, O{sub 2}). The development of the sensors has been performed at the Institute for Micro- and Nanoelectronic, Technical University Ilmenau in cooperation with (GE) General Electric Global Research (USA) and Umwelt-Sensor- Technik GmbH (Geschwenda). Chapter 1: serves as an introduction into the scientific fields related to this work. The theoretical fundamentals of solid-state gas sensors are provided and the relevant properties of wide band gap materials (SiC and GaN) are summarized. In chapter 2: The performance of Pt/GaN Schottky diodes with different thickness of the catalytic metal were investigated as hydrogen gas detectors. The area as well as the thickness of the Pt were varied between 250 {proportional_to} 250 {mu}m{sup 2} and 1000 {proportional_to} 1000 {mu}m{sup 2}, 8 and 40 nm, respectively. The response to hydrogen gas was investigated in dependence on the active area, the Pt thickness and the operating temperature for 1 vol.% hydrogen in synthetic air. We observed a significant increase of the sensitivity and a decrease of the response and recovery times by increasing the temperature of operation to about 350{sup o}C and by decreasing the Pt thickness down to 8 nm. Electron microscopy of the microstructure showed that the thinner platinum had a higher grain boundary density. The increase in sensitivity with decreasing Pt thickness points to the dissociation of molecular hydrogen on the surface, the diffusion of atomic hydrogen along the platinum grain boundaries and the adsorption of hydrogen at the Pt/GaN interface as a possible mechanism of sensing hydrogen by Schottky diodes. The

  9. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  10. Tuning of electronic band gaps and optoelectronic properties of binary strontium chalcogenides by means of doping of magnesium atom(s)- a first principles based theoretical initiative with mBJ, B3LYP and WC-GGA functionals

    Science.gov (United States)

    Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

    2018-02-01

    First principle based theoretical initiative is taken to tune the optoelectronic properties of binary strontium chalcogenide semiconductors by doping magnesium atom(s) into their rock-salt unit cells at specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and such tuning is established by studying structural, electronic and optical properties of designed binary compounds and ternary alloys employing WC-GGA, B3LYP and mBJ exchange-correlation functionals. Band structure of each compound is constructed and respective band gaps under all the potential schemes are measured. The band gap bowing and its microscopic origin are calculated using quadratic fit and Zunger's approach, respectively. The atomic and orbital origins of electronic states in the band structure of any compound are explored from its density of states. The nature of chemical bonds between the constituent atoms in each compound is explored from the valence electron density contour plots. Optical properties of any specimen are explored from the computed spectra of its dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity optical absorption and energy loss function. Several calculated results are compared with available experimental and earlier theoretical data.

  11. Modification of band gaps and optoelectronic properties of binary calcium chalcogenides by means of doping of magnesium atom(s) in rock-salt phase- a first principle based theoretical initiative

    Science.gov (United States)

    Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

    2018-02-01

    The band gaps and optoelectronic properties of binary calcium chalcogenide semiconductors have been modified theoretically by doping magnesium atom(s) into their respective rock-salt unit cells at some specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and confirmed such modifications by studying their structural, electronic and optical properties using DFT based FP-LAPW approach. The WC-GGA functional is used to calculate structural properties, while mBJ, B3LYP and WC-GGA are used for calculating electronic and optical properties. The concentration dependences of lattice parameter, bulk modulus and fundamental band gap for each alloy system exhibit nonlinearity. The atomic and orbital origin of different electronic states in the band structure of each compound are explored from its density of states (DOS). The microscopic origin of band gap bowing for each of the alloy systems is explored in terms of volume deformation, charge exchange and structural relaxation. The chemical bonds between the constituent atoms in each compound are found as ionic in nature. Optical properties of each specimen are calculated from its computed spectra of dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity, optical absorption and energy loss function. Several calculated results have been compared with available experimental and other theoretical data.

  12. A Wide Band Gap Polymer with a Deep Highest Occupied Molecular Orbital Level Enables 14.2% Efficiency in Polymer Solar Cells.

    Science.gov (United States)

    Li, Sunsun; Ye, Long; Zhao, Wenchao; Yan, Hongping; Yang, Bei; Liu, Delong; Li, Wanning; Ade, Harald; Hou, Jianhui

    2018-05-21

    To simultaneously achieve low photon energy loss ( E loss ) and broad spectral response, the molecular design of the wide band gap (WBG) donor polymer with a deep HOMO level is of critical importance in fullerene-free polymer solar cells (PSCs). Herein, we developed a new benzodithiophene unit, i.e., DTBDT-EF, and conducted systematic investigations on a WBG DTBDT-EF-based donor polymer, namely, PDTB-EF-T. Due to the synergistic electron-withdrawing effect of the fluorine atom and ester group, PDTB-EF-T exhibits a higher oxidation potential, i.e., a deeper HOMO level (ca. -5.5 eV) than most well-known donor polymers. Hence, a high open-circuit voltage of 0.90 V was obtained when paired with a fluorinated small molecule acceptor (IT-4F), corresponding to a low E loss of 0.62 eV. Furthermore, side-chain engineering demonstrated that subtle side-chain modulation of the ester greatly influences the aggregation effects and molecular packing of polymer PDTB-EF-T. With the benefits of the stronger interchain π-π interaction, the improved ordering structure, and thus the highest hole mobility, the most symmetric charge transport and reduced recombination are achieved for the linear decyl-substituted PDTB-EF-T (P2)-based PSCs, leading to the highest short-circuit current density and fill factor (FF). Due to the high Flory-Huggins interaction parameter (χ), surface-directed phase separation occurs in the P2:IT-4F blend, which is supported by X-ray photoemission spectroscopy results and cross-sectional transmission electron microscope images. By taking advantage of the vertical phase distribution of the P2:IT-4F blend, a high power conversion efficiency (PCE) of 14.2% with an outstanding FF of 0.76 was recorded for inverted devices. These results demonstrate the great potential of the DTBDT-EF unit for future organic photovoltaic applications.

  13. Comparative Investigation of Ce3+ Doped Scintillators in a Wide Range of Photon Energies Covering X-ray CT, Nuclear Medicine and Megavoltage Radiation Therapy Portal Imaging Applications

    Science.gov (United States)

    Valais, Ioannis G.; Michail, Christos M.; David, Stratos L.; Liaparinos, Panagiotis F.; Fountos, George P.; Paschalis, Theodoros V.; Kandarakis, Ioannis S.; Panayiotakis, George S.

    2010-02-01

    The aim of the present work is to study the performance of scintillators currently used in PET and animal PET systems, under conditions met in radiation therapy and PET/CT imaging. The results of this study will be useful in applications where both CT and PET photons as well as megavoltage cone beam CT (MV CBCT) photons could be detected using a common detector unit. To this aim crystal samples of GSO, LSO, LYSO, LuYAP and YAP scintillators, doped with cerium (Ce+3) were examined under a wide energy range of photon energies. Evaluation was performed by determining the absolute luminescence efficiency (emitted light flux over incident X-ray exposure) in the energy range employed in X-ray CT, in Nuclear Medicine (70 keV up to 662 keV) and in radiotherapy 6 MV (approx. 2.0 MeV mean energy)-18 MV (approx. 4.5 MeV mean energy). Measurements were performed using an experimental set-up based on a photomultiplier coupled to a light integration sphere. The emission spectrum under X-ray excitation was measured, using an optical grating monochromator, to determine the spectral compatibility to optical photon detectors incorporated in medical imaging systems. Maximum absolute luminescence efficiency values were observed at 70 keV for YAP:Ce and LuYAP:Ce and at 140 keV for LSO:Ce, LYSO:Ce and GSO:Ce. Highest absolute efficiency between the scintillators examined was observed for LSO:Ce, followed by LYSO:Ce. The detector optical gain (DOG) exhibited a significant variation with the increase of energy between 70 keV to 2.0 MeV. All scintillators exhibited low compatibility when combined with GaAsP (G5645) photodetector.

  14. Tuning the band gap of PbCrO{sub 4} through high-pressure: Evidence of wide-to-narrow semiconductor transitions

    Energy Technology Data Exchange (ETDEWEB)

    Errandonea, D., E-mail: daniel.errandonea@uv.es [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Bandiello, E.; Segura, A. [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Hamlin, J.J.; Maple, M.B. [Department of Physics, University of California, San Diego, La Jolla, CA 92093 (United States); Rodriguez-Hernandez, P.; Muñoz, A. [Departamento de Física Fundamental II, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, MALTA ConsoliderTeam, La Laguna, 38205 Tenerife (Spain)

    2014-02-25

    Highlights: • Electronic and optical properties of PbCrO{sub 4} are studied under compression. • Band-gap collapses are observed and correlated with structural phase transitions. • PbCrO{sub 4} band-gap is reduced from 2.3 to 0.8 eV in a 20 GPa range. • PbCrO{sub 4} is an n-type semiconductor with donor levels associated to Frenkel defects. • A deep-to-shallow donor transformation at HP induces a large resistivity decrease. -- Abstract: The electronic transport properties and optical properties of lead(II) chromate (PbCrO{sub 4}) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO{sub 4} behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO{sub 4} as a narrow-gap semiconductor.

  15. Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two-step energy transfer

    International Nuclear Information System (INIS)

    Haq Khizarul; Shanpeng Liu; Khan, M A; Jiang, X Y; Zhang, Z L; Zhu, W Q

    2008-01-01

    We demonstrated efficient red organic light-emitting diodes based on a host emitting system of 9,10-di(2-naphthyl)anthracene (ADN) co-doped with 4-(dicyano-methylene)-2-t-butyle-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7- tetrahydro-1,1,7,7-tetramethyl-1H,5H,1 1H-10(2-benzothiazolyl)-quinolizine-[9,9a,1gh] coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenylamino) triphenylamine(m-MTDATA)/N,N'-bis-(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB)/[ADN: DCJTB: C545T/Alq 3 /LiF/Al]. It was found that C545T dopant did not emit by itself but did assist the energy transfer from the host (ADN) to the red emitting dopant. The red OLEDs realized by this approach not only enhanced the emission color, but also significantly improved the EL efficiency. The EL efficiency reached 3.5 cd A −1 at a current density of 20 mA cm −2 , which is enhanced by three times compared with devices where the emissive layer is composed of the DCJTB doped ADN. The saturated red emission was obtained with CIE coordinates (x = 0.618, y = 0.373) at 621 nm, and the device driving voltage is decreased as much as 38%. We attribute these improvements to the assistant dopant (C545T), which leads to the more efficient energy transfer from ADN to DCJTB. These results indicate that the co-doped system is a promising method for obtaining high-efficiency red OLEDs

  16. Study of wide band-gap crystal LiCaAlF6 by IR-reflection spectroscopy and ab initio calculations

    International Nuclear Information System (INIS)

    Novikova, N.N.; Klimin, S.A.; Mavrin, B.N.

    2017-01-01

    Polarized IR-reflection spectra and results of ab initio calculations of vibrational and electronic properties of LiCaAlF6 single crystal are presented. It is shown that the crystal band gap is direct. Experimental and theoretical parameters are obtained for dipole-active and all phonons, respectively, including silent modes. Experimental IR-reflection and Raman spectra are well described in the frame of results obtained by ab initio calculations. The peculiarities are discussed concerning the structure of electronic bands, the interatomic interactions, the character of lattice vibrations, and the phonon dispersion.

  17. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  18. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    International Nuclear Information System (INIS)

    Saleh, Navid B.; Milliron, Delia J.; Aich, Nirupam; Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo

    2016-01-01

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  19. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    Energy Technology Data Exchange (ETDEWEB)

    Saleh, Navid B., E-mail: navid.saleh@utexas.edu [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States); Milliron, Delia J. [McKetta Department of Chemical Engineering, University of Texas, Austin, TX 78712 (United States); Aich, Nirupam [Department of Civil, Structural and Environmental Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260 (United States); Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States)

    2016-10-15

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  20. PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

    Science.gov (United States)

    2014-01-01

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

  1. PdO doping tunes band-gap energy levels as well as oxidative stress responses to a Co₃O₄ p-type semiconductor in cells and the lung.

    Science.gov (United States)

    Zhang, Haiyuan; Pokhrel, Suman; Ji, Zhaoxia; Meng, Huan; Wang, Xiang; Lin, Sijie; Chang, Chong Hyun; Li, Linjiang; Li, Ruibin; Sun, Bingbing; Wang, Meiying; Liao, Yu-Pei; Liu, Rong; Xia, Tian; Mädler, Lutz; Nel, André E

    2014-04-30

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0-8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the E(c) levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from -4.12 to -4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of E(v), E(c), and E(f) levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4.

  2. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

    International Nuclear Information System (INIS)

    Arezki, Hakim; Jaffré, Alexandre; Alamarguy, David; Alvarez, José; Kleider, Jean-Paul; Boutchich, Mohamed; Ho, Kuan-I; Lai, Chao-Sung

    2015-01-01

    Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities

  3. Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

    Science.gov (United States)

    Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

    2018-02-28

    In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

  4. A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications.

    Science.gov (United States)

    Rahman, MuhibUr; Ko, Dong-Sik; Park, Jung-Dong

    2017-09-25

    We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN. In order to estimate the frequency shifts of the notch due to the coupling of the nearby CSRRs, an analysis of the coupling among the multiple notch resonators is carried out and we construct the lumped-circuit equivalent model. The time domain analysis of the proposed antenna is performed to show its validity on the UWB application. The measured frequency response of the input port corresponds quite well with the calculations and simulations. The radiation pattern of the implemented quad-notched UWB antenna is nearly omnidirectional in the passband.

  5. Photocatalysis of Yttrium Doped BaTiO3 Nanofibres Synthesized by Electrospinning

    Directory of Open Access Journals (Sweden)

    Zhenjiang Shen

    2015-01-01

    Full Text Available Yttrium doped barium titanate (BT nanofibres (NFs with significant photocatalytic effect were successfully synthesized by electrospinning. Considering the necessary factors for semiconductor photocatalysts, a well-designed procedure was carried out to produce yttrium doped BT (BYT NFs. In contrast to BYT ceramics powders and BT NFs, BYT NFs with pure perovskite phase showed much enhanced performance of photocatalysis. The surface modification in electrospinning and subsequent annealing, the surface spreading of transition metal yttrium, and the narrowed band gap energy in yttrium doping were all contributed to the final novel photocatalytic effect. This work provides a direct and efficient route to obtain doped NFs, which has a wide range of potential applications in areas based on complex compounds with specific surface and special doping effect.

  6. Enhancing the electron transfer and band potential tuning with long-term stability of ZnO based dye-sensitized solar cells by gallium and tellurium as dual-doping

    International Nuclear Information System (INIS)

    Akin, Seckin; Erol, Erdinc; Sonmezoglu, Savas

    2017-01-01

    A series of ZnO nanoparticles with Ga and Te dual-doping were successfully synthesized by using a facile sol–gel route, and their performance as the photoanode material in DSSCs was employed for the first time. The effects of simultaneously Ga–Te dopants into ZnO host (Ga x Te 1-x ZnO where the values of x ranging from 0 to 1 mol % with increments of 0.25 mol %) on the structural, optical, morphological, and compositional properties of the resulting samples were characterized via XRD, Raman, UV–vis–NIR spectrometer, PL, BET, AFM, FE–SEM, EDX, and XPS measurements. The incorporation of Ga–Te enlarges the surface area of the photoanodes, leading to higher dye-loading capability. Moreover, the PL intensity of pure ZnO drastically decreases by Ga–Te dopants, which demonstrates the reduction of oxygen vacancies, indicating the slow recombination of photoinduced charge carriers. Owing to the doping effect of Ga–Te, the energy conversion efficiencies of the DSSCs based on these photoanodes lie in the range of 4.79–7.08%, which is higher than that of pure ZnO (3.53%). This improvement of efficiency can be mainly ascribed to the combined effects of faster electron transport rate, retarded charge recombination, enhanced dye adsorption capability, longer electron lifetime as well as shifted negatively of conduction band edge in dual-doped ZnO films. Furthermore, it is noteworthy that after 1200 h, the degraded Ga 0.25 Te 0.75 ZnO device still shows 86% of their initial efficiency. This study provides a strategy for constructing self-powered systems using a device such as Ga x Te 1-x ZnO based DSSC described here for the first time.

  7. Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method.

    Science.gov (United States)

    Malashchonak, Mikalai V; Mazanik, Alexander V; Korolik, Olga V; Streltsov, Еugene А; Kulak, Anatoly I

    2015-01-01

    The photoelectrochemical properties of nanoheterostructures based on the wide band gap oxide substrates (ZnO, TiO2, In2O3) and CdS nanoparticles deposited by the successive ionic layer adsorption and reaction (SILAR) method have been studied as a function of the CdS deposition cycle number (N). The incident photon-to-current conversion efficiency (IPCE) passes through a maximum with the increase of N, which is ascribed to the competition between the increase in optical absorption and photocarrier recombination. The maximal IPCE values for the In2O3/CdS and ZnO/CdS heterostructures are attained at N ≈ 20, whereas for TiO2/CdS, the appropriate N value is an order of magnitude higher. The photocurrent and Raman spectroscopy studies of CdS nanoparticles revealed the occurrence of the quantum confinement effect, demonstrating the most rapid weakening with the increase of N in ZnO/CdS heterostructures. The structural disorder of CdS nanoparticles was characterized by the Urbach energy (E U), spectral width of the CdS longitudinal optical (LO) phonon band and the relative intensity of the surface optical (SO) phonon band in the Raman spectra. Maximal values of E U (100-120 meV) correspond to СdS nanoparticles on a In2O3 surface, correlating with the fact that the CdS LO band spectral width and intensity ratio for the CdS SO and LO bands are maximal for In2O3/CdS films. A notable variation in the degree of disorder of CdS nanoparticles is observed only in the initial stages of CdS growth (several tens of deposition cycles), indicating the preservation of the nanocrystalline state of CdS over a wide range of SILAR cycles.

  8. Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR method

    Directory of Open Access Journals (Sweden)

    Mikalai V. Malashchonak

    2015-11-01

    Full Text Available The photoelectrochemical properties of nanoheterostructures based on the wide band gap oxide substrates (ZnO, TiO2, In2O3 and CdS nanoparticles deposited by the successive ionic layer adsorption and reaction (SILAR method have been studied as a function of the CdS deposition cycle number (N. The incident photon-to-current conversion efficiency (IPCE passes through a maximum with the increase of N, which is ascribed to the competition between the increase in optical absorption and photocarrier recombination. The maximal IPCE values for the In2O3/CdS and ZnO/CdS heterostructures are attained at N ≈ 20, whereas for TiO2/CdS, the appropriate N value is an order of magnitude higher. The photocurrent and Raman spectroscopy studies of CdS nanoparticles revealed the occurrence of the quantum confinement effect, demonstrating the most rapid weakening with the increase of N in ZnO/CdS heterostructures. The structural disorder of CdS nanoparticles was characterized by the Urbach energy (EU, spectral width of the CdS longitudinal optical (LO phonon band and the relative intensity of the surface optical (SO phonon band in the Raman spectra. Maximal values of EU (100–120 meV correspond to СdS nanoparticles on a In2O3 surface, correlating with the fact that the CdS LO band spectral width and intensity ratio for the CdS SO and LO bands are maximal for In2O3/CdS films. A notable variation in the degree of disorder of CdS nanoparticles is observed only in the initial stages of CdS growth (several tens of deposition cycles, indicating the preservation of the nanocrystalline state of CdS over a wide range of SILAR cycles.

  9. Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

    Science.gov (United States)

    2009-02-19

    34 (to be submitted to APL) " Positron Annihilation Spectroscopy of Annealed and As-grown Be-doped GaN" (to be submitted to APL - delayed by the...WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) 6. AUTHOR(S) DRS DOOLITTILE, FRAZIER, BURNHAM, PRITCHETT, BILLINGSLEY...NEXT GENERATION EPITAXY: NON-EQUILIBRIUM WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) VOLUME I 3D COMPOSITION/DOPING

  10. Tl{sub 4}CdI{sub 6} – Wide band gap semiconductor: First principles modelling of the structural, electronic, optical and elastic properties

    Energy Technology Data Exchange (ETDEWEB)

    Piasecki, M., E-mail: m.piasecki@ajd.czest.pl [Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, 42-200 Czestochowa (Poland); Brik, M.G. [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Ravila 14C, Tartu 50411 (Estonia); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Kityk, I.V. [Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, 42-200 Czestochowa (Poland)

    2015-08-01

    A novel infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using the density functional theory (DFT)-based techniques. Its structural, electronic, optical and elastic properties were all calculated in the generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) with the Ceperley-Alder–Perdew-Zunger (CA–PZ) functionals. The studied material is a direct band gap semiconductor with the calculated band gaps of 2.043 eV (GGA) and 1.627 eV (LDA). The wavelength dependence of the refractive index was fitted to the Sellmeier equation in the spectral range from 400 to 2000 nm. Good agreement between the GGA-calculated values of refractive index and experimental data was achieved. To the best of our knowledge, this is the first consistent theoretical description of the title compound, which includes calculations and analysis of the structural, electronic, optical and elastic properties. - Graphical abstract: Display Omitted - Highlights: • Infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using ab initio methods. • Structural, electronic, optical and elastic properties were calculated. • Independent components of the elastic constants tensor were calculated. • Good agreement with available experimental results was achieved.

  11. Tl4CdI6 – Wide band gap semiconductor: First principles modelling of the structural, electronic, optical and elastic properties

    International Nuclear Information System (INIS)

    Piasecki, M.; Brik, M.G.; Kityk, I.V.

    2015-01-01

    A novel infrared optoelectronic material Tl 4 CdI 6 was studied using the density functional theory (DFT)-based techniques. Its structural, electronic, optical and elastic properties were all calculated in the generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) with the Ceperley-Alder–Perdew-Zunger (CA–PZ) functionals. The studied material is a direct band gap semiconductor with the calculated band gaps of 2.043 eV (GGA) and 1.627 eV (LDA). The wavelength dependence of the refractive index was fitted to the Sellmeier equation in the spectral range from 400 to 2000 nm. Good agreement between the GGA-calculated values of refractive index and experimental data was achieved. To the best of our knowledge, this is the first consistent theoretical description of the title compound, which includes calculations and analysis of the structural, electronic, optical and elastic properties. - Graphical abstract: Display Omitted - Highlights: • Infrared optoelectronic material Tl 4 CdI 6 was studied using ab initio methods. • Structural, electronic, optical and elastic properties were calculated. • Independent components of the elastic constants tensor were calculated. • Good agreement with available experimental results was achieved

  12. The structure and band gap design of high Si doping level Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} (x=1/2)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shiyan [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Mei, Dajiang, E-mail: meidajiang718@pku.edu.cn [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, Xin [Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Lin, Zheshuai [Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Chinese Academy of Sciences, Beijing 100190 (China); Zhong, Junbo [Key Laboratory of Green Catalysis of Higher Education Institutes of Sichuan, College of Chemistry and Pharmaceutical Engineering, Sichuan University of Science and Engineering, Zigong 643000 (China); Wu, Yuandong, E-mail: wuyuandong2013@outlook.com [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, Jingli [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China)

    2016-06-15

    Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe{sub 4} has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe{sub 4} is composed of AgSe{sub 3} trigonal planar units, AgSe{sub 4} tetrahedra and MSe{sub 4}(M=Si, Ga) tetrahedra. AgGaSiSe{sub 4} is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe{sub 4} and the value is 0.33 eV larger than that of Ag{sub 3}Ga{sub 3}SiSe{sub 8} (2.30 eV). - Graphical abstract: The Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe{sub 4} was synthesized for the first time. AgGaSiSe{sub 4} crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe{sub 3} trigonal planar units, AgSe{sub 4} tetrahedra and MSe{sub 4} (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe{sub 4}. • AgGaSiSe{sub 4} crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe{sub 4} is enlarged compared with Ag{sub 3}Ga{sub 3}SiSe{sub 8}.

  13. Tuning the band gap of TiO2 by tungsten doping for efficient UV and visible photodegradation of Congo red dye.

    Science.gov (United States)

    Ullah, Irfan; Haider, Ali; Khalid, Nasir; Ali, Saqib; Ahmed, Sajjad; Khan, Yaqoob; Ahmed, Nisar; Zubair, Muhammad

    2018-06-13

    Tungsten-doped TiO 2 (W@TiO 2 ) nanoparticles, with different percentages of atomic tungsten dopant levels (range of 0 to 6 mol%) have been synthesized by the sol-gel method and characterized by UV-Visible spectroscopy, XRD, SEM, EDX, ICP-OES and XPS analysis. By means of UV-Vis spectroscopy, it has been observed that with 6 mol% tungsten doping the wavelength range of excitation of TiO 2 has extended to the visible portion of spectrum. Therefore, we evaluated the photocatalytic activity of W@TiO 2 catalysts for the degradation of Congo red dye under varying experimental parameters such as dopant concentration, catalyst dosage, dye concentrations and pH. Moreover, 6 mol% W@TiO 2 catalyst was deposited on a glass substrate to form thin film using spin coating technique in order to make the photocatalyst effortlessly reusable with approximately same efficiency. The results compared with standard titania, Degussa P25 both in UV- and visible light, suggest that 6 mol% W@TiO 2 can be a cost-effective choice for visible light induced photocatalytic degradation of Congo red dye. Copyright © 2018 Elsevier B.V. All rights reserved.

  14. Ultranarrow and widely tunable Mn2+-Induced photoluminescence from single Mn-doped nanocrystals of ZnS-CdS alloys.

    Science.gov (United States)

    Hazarika, Abhijit; Layek, Arunasish; De, Suman; Nag, Angshuman; Debnath, Saikat; Mahadevan, Priya; Chowdhury, Arindam; Sarma, D D

    2013-06-28

    Extensively studied Mn-doped semiconductor nanocrystals have invariably exhibited photoluminescence over a narrow energy window of width ≤150  meV in the orange-red region and a surprisingly large spectral width (≥180  meV), contrary to its presumed atomic-like origin. Carrying out emission measurements on individual single nanocrystals and supported by ab initio calculations, we show that Mn PL emission, in fact, can (i) vary over a much wider range (∼370  meV) covering the deep green--deep red region and (ii) exhibit widths substantially lower (∼60-75  meV) than reported so far, opening newer application possibilities and requiring a fundamental shift in our perception of the emission from Mn-doped semiconductor nanocrystals.

  15. Nd3+-doped heavy metal oxide based multicomponent borate glasses for 1.06 μm solid-state NIR laser and O-band optical amplification applications

    Science.gov (United States)

    Lakshminarayana, G.; Kaky, Kawa M.; Baki, S. O.; Lira, A.; Meza-Rocha, A. N.; Falcony, C.; Caldiño, U.; Kityk, I. V.; Méndez-Blas, A.; Abas, A. F.; Alresheedi, M. T.; Mahdi, M. A.

    2018-04-01

    Nd3+-doped glasses in the composition (50-x) B2O3-10 PbO-10 BaO-10 Al2O3-10 ZnO-10 Na2O-(x) Nd2O3 (x = 0.0, 0.1, 0.25, 0.5, 0.75, 1.0, 1.5, and 2.0 mol %) were fabricated using melt quenching method. Upon 592 nm visible and 808 nm LD excitations, the luminescence spectra show a strong 4F3/2 → 4I11/2 (1.06 μm) emission transition, and two less intense 4F3/2 → 4I9/2 (0.89 μm) and 4F3/2 → 4I13/2 (1.331 μm) emission transitions. The intensity of such emissions increases up to 0.5 mol % Nd3+, and above this doping level, quenching occurs. For 0.5 mol % Nd3+-doped glass, following Judd-Ofelt intensity parameters and emission spectrum, AR, τR, βR and βexp, including Δλeff,σem(λp), (σem × (Δλeff)) and (σem × (τrad)), are derived for Nd3+ ion 4F3/2 → 4I11/2 and 4F3/2 → 4I13/2 fluorescence transitions. The highest σem(λp) for the 1.06 and 1.331 μm fluorescence bands are found to be 6.216 × 10-20 and 2.295 × 10-20cm2, respectively. The 4F3/2 level lifetimes are found to decrease with an increase in Nd2O3 content and the decay curves of the glass up to 1.5 mol % Nd3+ exhibit single exponential nature. From 'τexp' of the Nd3+: 4F3/2 level, quantum efficiency (η), (σem × (τexp)), and saturation intensity (IS) are 48.87%, 51.09 × 10-25 cm2s and 3.67 × 108 W/m2, respectively, for the 0.5 mol % Nd3+-doped glass. Higher thermal stability, very low χ, high AR, large βexp., moderate τR, large gain bandwidth and high optical gain values indicate that 0.5 mol % Nd3+-doped glass could be a potential gain medium for solid-state NIR lasers at 1.06 μm. Moreover, for the 1.331 μm emission, large Δλeff and the theoretical gain coefficient value of 1.579 dB/cm, evaluated with an excited Nd3+ ion fractional factor of 0.6, indicate that this glass might be a promising candidate in developing O-band optical fiber amplifiers.

  16. Three gangliogliomas: results of GTG-banding, SKY, genome-wide high resolution SNP-array, gene expression and review of the literature.

    Science.gov (United States)

    Xu, Li-Xin; Holland, Heidrun; Kirsten, Holger; Ahnert, Peter; Krupp, Wolfgang; Bauer, Manfred; Schober, Ralf; Mueller, Wolf; Fritzsch, Dominik; Meixensberger, Jürgen; Koschny, Ronald

    2015-04-01

    According to the World Health Organization gangliogliomas are classified as well-differentiated and slowly growing neuroepithelial tumors, composed of neoplastic mature ganglion and glial cells. It is the most frequent tumor entity observed in patients with long-term epilepsy. Comprehensive cytogenetic and molecular cytogenetic data including high-resolution genomic profiling (single nucleotide polymorphism (SNP)-array) of gangliogliomas are scarce but necessary for a better oncological understanding of this tumor entity. For a detailed characterization at the single cell and cell population levels, we analyzed genomic alterations of three gangliogliomas using trypsin-Giemsa banding (GTG-banding) and by spectral karyotyping (SKY) in combination with SNP-array and gene expression array experiments. By GTG and SKY, we could confirm frequently detected chromosomal aberrations (losses within chromosomes 10, 13 and 22; gains within chromosomes 5, 7, 8 and 12), and identify so far unknown genetic aberrations like the unbalanced non-reciprocal translocation t(1;18)(q21;q21). Interestingly, we report on the second so far detected ganglioglioma with ring chromosome 1. Analyses of SNP-array data from two of the tumors and respective germline DNA (peripheral blood) identified few small gains and losses and a number of copy-neutral regions with loss of heterozygosity (LOH) in germline and in tumor tissue. In comparison to germline DNA, tumor tissues did not show substantial regions with significant loss or gain or with newly developed LOH. Gene expression analyses of tumor-specific genes revealed similarities in the profile of the analyzed samples regarding different relevant pathways. Taken together, we describe overlapping but also distinct and novel genetic aberrations of three gangliogliomas. © 2014 Japanese Society of Neuropathology.

  17. Determination of optical constant and dispersion parameters of Se{sub 75}Sb{sub 10}In{sub 15} thin film characterized by wide band gap

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elrahman, M.I.; Abu-Sehly, A.A.; El-sonbaty, Sherouk Sh.; Hafiz, M.M. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt)

    2017-02-15

    Chalcogenide Se{sub 75}Sb{sub 10}In{sub 15} thin films of different thickness (50-300 nm) are deposited using thermal evaporation technique. The thermogram of the chalcogenide bulk Se{sub 75}Sb{sub 10}In{sub 15} is obtained using a differential scanning calorimetry (DSC). The crystallization temperature T{sub c}, peak crystallization temperature T{sub p} and melting temperature T{sub m}, are identified. The X-ray diffraction (XRD) examination indicates the crystallinity of the as-deposited film decreases with increasing of thickness. Optical transmission and reflection spectra are recorded in the wavelength range of the incident photons from 250 to 2500 nm. It is found that the film thickness affects the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The absorption mechanism of the as-deposited films is a direct allowed transition. The optical band gap energy (E{sub g}) decreases from 3.31 to 2.51 eV with increasing the film thickness from 50 to 300 nm. The behavior of E{sub g} is explained on the basis of the structure disorders in the thicker films. The effect of the film thickness on the single-oscillator and dispersion energies is studied by the dispersion analyses of the refractive index. (orig.)

  18. Coupling of narrow and wide band-gap semiconductors on uniform films active in bacterial disinfection under low intensity visible light: implications of the interfacial charge transfer (IFCT).

    Science.gov (United States)

    Rtimi, S; Sanjines, R; Pulgarin, C; Houas, A; Lavanchy, J-C; Kiwi, J

    2013-09-15

    This study reports the design, preparation, testing and surface characterization of uniform films deposited by sputtering Ag and Ta on non-heat resistant polyester to evaluate the Escherichia coli inactivation by TaON, TaN/Ag, Ag and TaON/Ag polyester. Co-sputtering for 120 s Ta and Ag in the presence of N₂ and O₂ led to the faster E. coli inactivation by a TaON/Ag sample within ∼40 min under visible light irradiation. The deconvolution of TaON/Ag peaks obtained by X-ray photoelectron spectroscopy (XPS) allowed the assignment of the Ta₂O₅ and Ag-species. The shifts observed for the XPS peaks have been assigned to AgO to Ag₂O and Ag(0), and are a function of the applied sputtering times. The mechanism of interfacial charge transfer (IFCT) from the Ag₂O conduction band (cb) to the lower laying Ta₂O₅ (cb) is discussed suggesting a reaction mechanism. The optical absorption of the TaON and TaON/Ag samples found by diffuse reflectance spectroscopy (DRS) correlated well with the kinetics of E. coli inactivation. The TaON/Ag sample microstructure was characterized by contact angle (CA) and by atomic force microscopy (AFM). Self-cleaning of the TaON/Ag polyester after each disinfection cycle enabled repetitive E. coli inactivation. Copyright © 2013 Elsevier B.V. All rights reserved.

  19. Characterization and control of the electro-optic phase dispersion in lithium niobate modulators for wide spectral band interferometry applications in the mid-infrared.

    Science.gov (United States)

    Heidmann, S; Ulliac, G; Courjal, N; Martin, G

    2017-05-10

    Mid-infrared wideband modulation (3.2-3.7 μm) is achieved in an electro-optic Y-junction using lithium niobate waveguides in TE polarized light. Comparison between external (scanning mirror) and internal (electro-optical) modulation allows studying the chromatic polynomial dependence of the relative phase. Internal modulation consists on a V AC ramp up to 370 V at 0.25 Hz, applied over 14 mm long electrodes with 14 μm separation. The overall V π L π obtained is 17.5 V·cm, meaning that using a 300 V generator we can actively scan and track the whole L-band (3.4-4.1 μm) wideband fringes. We observe a dramatic reduction of the coherence length under electro-optic modulation, which is attributed to a strong nonlinear dependence of the electro-optic effect on the wavelength upon application of such high voltages. We study the effect of applying a V DC offset, from -50  V to 200 V (50 V step). We characterize this dispersion and propose an improved dispersion model that is used to show active dispersion compensation in wideband fringe modulation in the mid-infrared. This can be useful for long baseline interferometry or pulse compression applications when light propagates along fibers, in order to compensate for chromatic effects that induce differential dispersion or pulse spreading, respectively.

  20. The study of electronic structures and optical properties of Al-doped GaN

    International Nuclear Information System (INIS)

    Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin; Li Lisha

    2011-01-01

    The electronic structures and optical properties of undoped and Al-doped GaN (Al x Ga 1-x N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al x Ga 1-x N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

  1. Coupling of narrow and wide band-gap semiconductors on uniform films active in bacterial disinfection under low intensity visible light: Implications of the interfacial charge transfer (IFCT)

    International Nuclear Information System (INIS)

    Rtimi, S.; Sanjines, R.; Pulgarin, C.; Houas, A.; Lavanchy, J.-C.; Kiwi, J.

    2013-01-01

    Highlights: • Design, preparation, testing and characterization of uniform sputtered films. • Interfacial charge transfer from the Ag 2 O (cb) to the lower laying Ta 2 O 5 (cb). • The optical absorption of TaON and TaON/Ag was proportional to E. coli inactivation. • Self-cleaning of the TaON/Ag polyester enables repetitive E. coli inactivation. -- Abstract: This study reports the design, preparation, testing and surface characterization of uniform films deposited by sputtering Ag and Ta on non-heat resistant polyester to evaluate the Escherichia coli inactivation by TaON, TaN/Ag, Ag and TaON/Ag polyester. Co-sputtering for 120 s Ta and Ag in the presence of N 2 and O 2 led to the faster E. coli inactivation by a TaON/Ag sample within ∼40 min under visible light irradiation. The deconvolution of TaON/Ag peaks obtained by X-ray photoelectron spectroscopy (XPS) allowed the assignment of the Ta 2 O 5 and Ag-species. The shifts observed for the XPS peaks have been assigned to AgO to Ag 2 O and Ag 0 , and are a function of the applied sputtering times. The mechanism of interfacial charge transfer (IFCT) from the Ag 2 O conduction band (cb) to the lower laying Ta 2 O 5 (cb) is discussed suggesting a reaction mechanism. The optical absorption of the TaON and TaON/Ag samples found by diffuse reflectance spectroscopy (DRS) correlated well with the kinetics of E. coli inactivation. The TaON/Ag sample microstructure was characterized by contact angle (CA) and by atomic force microscopy (AFM). Self-cleaning of the TaON/Ag polyester after each disinfection cycle enabled repetitive E. coli inactivation

  2. Coupling of narrow and wide band-gap semiconductors on uniform films active in bacterial disinfection under low intensity visible light: Implications of the interfacial charge transfer (IFCT)

    Energy Technology Data Exchange (ETDEWEB)

    Rtimi, S., E-mail: sami.rtimi@epfl.ch [Ecole Polytechnique Fédérale de Lausanne, EPFL-SB-ISIC-GPAO, Station 6, CH-1015 Lausanne (Switzerland); UR Catalyse/Matériaux pour l‘Environnement et les Procédés (URCMEP), Faculté des Sciences de Gabès, Université de Gabès, 6072 Gabès (Tunisia); Sanjines, R. [Ecole Polytechnique Fédérale de Lausanne, EPFL-SB-IPMC-LNNME, Bat PH, Station 3, CH1015 Lausanne (Switzerland); Pulgarin, C., E-mail: cesar.pulgarin@epfl.ch [Ecole Polytechnique Fédérale de Lausanne, EPFL-SB-ISIC-GPAO, Station 6, CH-1015 Lausanne (Switzerland); Houas, A. [UR Catalyse/Matériaux pour l‘Environnement et les Procédés (URCMEP), Faculté des Sciences de Gabès, Université de Gabès, 6072 Gabès (Tunisia); Lavanchy, J.-C. [Université de Lausanne, IMG, Centre d’Analyse Minérale, Bat Anthropole, CH-1015 Lausanne (Switzerland); Kiwi, J. [Ecole Polytechnique Fédérale de Lausanne, EPFL-SB-ISIC-LPI, Bat Chimie, Station 6, CH1015 Lausanne (Switzerland)

    2013-09-15

    Highlights: • Design, preparation, testing and characterization of uniform sputtered films. • Interfacial charge transfer from the Ag{sub 2}O (cb) to the lower laying Ta{sub 2}O{sub 5} (cb). • The optical absorption of TaON and TaON/Ag was proportional to E. coli inactivation. • Self-cleaning of the TaON/Ag polyester enables repetitive E. coli inactivation. -- Abstract: This study reports the design, preparation, testing and surface characterization of uniform films deposited by sputtering Ag and Ta on non-heat resistant polyester to evaluate the Escherichia coli inactivation by TaON, TaN/Ag, Ag and TaON/Ag polyester. Co-sputtering for 120 s Ta and Ag in the presence of N{sub 2} and O{sub 2} led to the faster E. coli inactivation by a TaON/Ag sample within ∼40 min under visible light irradiation. The deconvolution of TaON/Ag peaks obtained by X-ray photoelectron spectroscopy (XPS) allowed the assignment of the Ta{sub 2}O{sub 5} and Ag-species. The shifts observed for the XPS peaks have been assigned to AgO to Ag{sub 2}O and Ag{sup 0}, and are a function of the applied sputtering times. The mechanism of interfacial charge transfer (IFCT) from the Ag{sub 2}O conduction band (cb) to the lower laying Ta{sub 2}O{sub 5} (cb) is discussed suggesting a reaction mechanism. The optical absorption of the TaON and TaON/Ag samples found by diffuse reflectance spectroscopy (DRS) correlated well with the kinetics of E. coli inactivation. The TaON/Ag sample microstructure was characterized by contact angle (CA) and by atomic force microscopy (AFM). Self-cleaning of the TaON/Ag polyester after each disinfection cycle enabled repetitive E. coli inactivation.

  3. Ultraviolet photoluminescence in Gd-doped silica and phosphosilicate fibers

    Directory of Open Access Journals (Sweden)

    Y. Wang

    2017-04-01

    Full Text Available Optical fiber lasers operating in the near infrared and visible spectral regions have relied on the spectroscopic properties of rare earth ions such as Yb3+, Er3+, Tm3+, Nd3+, and Sm3+. Here, we investigate Gd3+ doping in phosphosilicate and pure silica fibers using solution doping and sol-gel techniques, respectively, for potential applications in the ultraviolet. Photoluminescence spectra for optical fiber bundles and fiber preforms were recorded and compared. Emissions at 312 nm (phosphosilicate and 314 nm (pure silica were observed when pumping to the Gd3+ 6DJ, 6IJ, and 6PJ = 5/2, 3/2 energy levels. Oxygen deficient center was observed in solution doping sample with a wide absorption band centered at around 248 nm not affecting pumping to 6IJ states.

  4. Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

    Directory of Open Access Journals (Sweden)

    K. Durga Venkata Prasad

    2016-07-01

    Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

  5. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    Science.gov (United States)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  6. Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

    Directory of Open Access Journals (Sweden)

    Zheng Huang

    2015-09-01

    Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

  7. Preparation of Mn doped CeO_2 nanoparticles with enhanced ferromagnetism

    International Nuclear Information System (INIS)

    Ravi, S.; Winfred Shashikanth, F.

    2017-01-01

    Spherical-like CeO_2 and Mn-doped CeO_2 using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO_2 is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO_2 nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

  8. Preparation of Mn doped CeO{sub 2} nanoparticles with enhanced ferromagnetism

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, S., E-mail: sravi@mepcoeng.ac.in; Winfred Shashikanth, F.

    2017-06-15

    Spherical-like CeO{sub 2} and Mn-doped CeO{sub 2} using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO{sub 2} is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO{sub 2} nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

  9. Luminescent properties of Ln3+ doped tellurite glasses containing AlF3

    Science.gov (United States)

    Walas, Michalina; Pastwa, Agata; Lewandowski, Tomasz; Synak, Anna; Gryczyński, Ignacy; Sadowski, Wojciech; Kościelska, Barbara

    2016-09-01

    The low-phonon energy tellurite glasses TeO2-BaO-Bi2O3 and TeO2-BaO-Bi2O3-AlF3 triply doped with Eu3+, Tb3+, Tm3+ ions in two different molar ratios were synthesized using melt-quenching technique. Their structure and luminescence properties were widely investigated by X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence Spectroscopy (PL). The luminescence spectra of Eu3+, Tb3+, Tm3+ co-doped glasses show apart of the bands corresponding to the 4f-4f transitions of lanthanide ions also band corresponding to glass matrix. AlF3 doping increases emission intensity, although to improve overall emission color further studies on molar composition of samples and the molar ratio of the components should be carried out.

  10. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Bai Xianchen; Zhang Jiande; Yang Jianhua; Jin Zhenxing [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-12-15

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.

  11. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    Science.gov (United States)

    Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing

    2012-12-01

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.

  12. Plasma-Assisted Co-evaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Final Subcontract Report, December 2001 -- April 2005

    Energy Technology Data Exchange (ETDEWEB)

    Repins, I.; Wolden, C.

    2005-08-01

    In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species are converted to atomic species in a low-pressure inductively coupled plasma (ICP). This program explored the use of plasma-activated chalcogen sources in CIGS co-evaporation to lower CIGS deposition temperature, increase utilization, increase deposition rate, and improve S:Se stoichiometry control. Plasma activation sources were designed and built, then operated and characterized over a wide range of conditions. Optical emission and mass spectrometry data show that chalcogens are effectively dissociated in the plasma. The enhanced reactivity achieved by the plasma processing was demonstrated by conversion of pre-deposited metal films to respective chalcogen-containing phases at low temperature and low chalcogen flux. The plasma-assisted co-evaporation (PACE) sources were also implemented in CIGS co-evaporation. No benefit from PACE was observed in device results, and frequent deposition failures occurred.

  13. Engineering Pyrite-Type Bimetallic Ni-Doped CoS2 Nanoneedle Arrays over a Wide Compositional Range for Enhanced Oxygen and Hydrogen Electrocatalysis with Flexible Property

    Directory of Open Access Journals (Sweden)

    Guowei He

    2017-11-01

    Full Text Available The development of cheap and efficient catalytic electrodes is of great importance, to promote the sluggish overall water-splitting systems associated with the large-scale application of clean and renewable energy technologies. In this work, we report the controlled synthesis of pyrite-type bimetallic Ni-doped CoS2 nanoneedle (NN arrays supported on stainless steel (SS (designated as NixCo1−xS2 NN/SS, 0 ≤ x ≤ 1 and the related compositional influence on electrocatalytic efficiencies for the oxygen and hydrogen evolution reaction (OER/HER. Impressively, the Ni0.33Co0.67S2 NN/SS displays superior activity and faster kinetics for catalyzing OER (low overpotential of 286 mV at 50 mA cm−2; Tafel value of 55 mV dec−1 and HER (low overpotential of 350 mV at 30 mA cm−2; Tafel value of 76 mV dec−1 than those of counterparts with other Ni/Co ratios and also monometallic Ni- or Co-based sulfides, which is attributed to the optimized balance from the improved electron transfer capability, increased exposure of electrocatalytic active sites, and favorable dissipation of gaseous products over the nanoneedle surface. Furthermore, the conductive, flexible SS support and firmly attached in-situ integrated feature, result in the flexibility and remarkable long-term stability of as-prepared binder-free Ni0.33Co0.67S2 NN/SS electrode. These results demonstrate element-doping could be an efficient route at the atomic level to design new materials and further optimize the surface physicochemical properties for enhancing the overall electrochemical water splitting activity.

  14. Metaheuristics-Assisted Combinatorial Screening of Eu2+-Doped Ca-Sr-Ba-Li-Mg-Al-Si-Ge-N Compositional Space in Search of a Narrow-Band Green Emitting Phosphor and Density Functional Theory Calculations.

    Science.gov (United States)

    Lee, Jin-Woong; Singh, Satendra Pal; Kim, Minseuk; Hong, Sung Un; Park, Woon Bae; Sohn, Kee-Sun

    2017-08-21

    A metaheuristics-based design would be of great help in relieving the enormous experimental burdens faced during the combinatorial screening of a huge, multidimensional search space, while providing the same effect as total enumeration. In order to tackle the high-throughput powder processing complications and to secure practical phosphors, metaheuristics, an elitism-reinforced nondominated sorting genetic algorithm (NSGA-II), was employed in this study. The NSGA-II iteration targeted two objective functions. The first was to search for a higher emission efficacy. The second was to search for narrow-band green color emissions. The NSGA-II iteration finally converged on BaLi 2 Al 2 Si 2 N 6 :Eu 2+ phosphors in the Eu 2+ -doped Ca-Sr-Ba-Li-Mg-Al-Si-Ge-N compositional search space. The BaLi 2 Al 2 Si 2 N 6 :Eu 2+ phosphor, which was synthesized with no human intervention via the assistance of NSGA-II, was a clear single phase and gave an acceptable luminescence. The BaLi 2 Al 2 Si 2 N 6 :Eu 2+ phosphor as well as all other phosphors that appeared during the NSGA-II iterations were examined in detail by employing powder X-ray diffraction-based Rietveld refinement, X-ray absorption near edge structure, density functional theory calculation, and time-resolved photoluminescence. The thermodynamic stability and the band structure plausibility were confirmed, and more importantly a novel approach to the energy transfer analysis was also introduced for BaLi 2 Al 2 Si 2 N 6 :Eu 2+ phosphors.

  15. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  16. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  17. Thermal characterization, crystal field analysis and in-band pumped laser performance of Er doped NaY(WO(4(2 disordered laser crystals.

    Directory of Open Access Journals (Sweden)

    María Dolores Serrano

    Full Text Available Undoped and Er-doped NaY(WO42 disordered single crystals have been grown by the Czochralski technique. The specific heat and thermal conductivity (κ of these crystals have been characterized from T = 4 K to 700 K and 360 K, respectively. It is shown that κ exhibits anisotropy characteristic of single crystals as well as a κ(T behavior observed in glasses, with a saturation mean free phonon path of 3.6 Å and 4.5 Å for propagation along a and c crystal axes, respectively. The relative energy positions and irreducible representations of Stark Er(3+ levels up to (4G(7/2 multiplet have been determined by the combination of experimental low (<10 K temperature optical absorption and photoluminescence measurements and simulations with a single-electron Hamiltonian including both free-ion and crystal field interactions. Absorption, emission and gain cross sections of the (4I(13/2↔(4I(15/2 laser related transition have been determined at 77 K. The (4I(13/2 Er(3+ lifetime (τ was measured in the temperature range of 77-300 K, and was found to change from τ (77K ≈ 4.5 ms to τ (300K ≈ 3.5 ms. Laser operation is demonstrated at 77 K and 300 K by resonantly pumping the (4I(13/2 multiplet at λ≈1500 nm with a broadband (FWHM≈20 nm diode laser source perfectly matching the 77 K crystal (4I(15/2 → (4I(13/2 absorption profile. At 77 K as much as 5.5 W of output power were obtained in π-polarized configuration with a slope efficiency versus absorbed pump power of 57%, the free running laser wavelength in air was λ≈1611 nm with the laser output bandwidth of 3.5 nm. The laser emission was tunable over 30.7 nm, from 1590.7 nm to 1621.4 nm, for the same π-polarized configuration.

  18. Brilliant blue, green and orange-red emission band on Tm{sup 3+}-, Tb{sup 3+}- and Eu{sup 3+}-doped ZrO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Romero, V H; De la Rosa, E; Lopez-Luke, T [Centro de Investigaciones en Optica, A.P. 1-948, Leon Gto., 37160 (Mexico); Salas, P [Centro de Fisica Aplicada y TecnologIa Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico); Angeles-Chavez, C, E-mail: elder@cio.m [Instituto Mexicano del Petroleo, Programa de IngenierIa Molecular, A.P. 11-848, Mexico, D.F. 07730 (Mexico)

    2010-11-24

    Tm{sup 3+}-, Tb{sup 3+}- and Eu{sup 3+}-doped ZrO{sub 2} nanocrystals were prepared by a facile precipitation method with a hydrothermal process. Structural characterization showed a crystallite size ranging from 30 to 40 nm, and monoclinic and tetragonal zirconia phases were observed depending on the dopant concentration. The monoclinic phase was dominant for 0.5 mol% of Tb{sup 3+} and Eu{sup 3+}, and the tetragonal phase was 100% stabilized for 2 mol% of Tm{sup 3+} and Tb{sup 3+}. The structure of emission bands associated with Eu{sup 3+} confirms the substitution of Zr{sup 4+} located at C{sub 1} and D{sub 2h} symmetry sites for the monoclinic and tetragonal phases. The emission of three primary colours, red, green and blue, was obtained from Eu{sup 3+}, Tb{sup 3+} and Tm{sup 3+}, respectively, which makes this nanophosphor an excellent candidate for use in photonics applications. The emitted signal was analysed as a function of ion concentration and the optimum concentration was determined.

  19. Preparation, structural and luminescent properties of nanocrystalline ZnO films doped Ag by close space sublimation method

    Science.gov (United States)

    Khomchenko, Viktoriya; Mazin, Mikhail; Sopinskyy, Mykola; Lytvyn, Oksana; Dan'ko, Viktor; Piryatinskii, Yurii; Demydiuk, Pavlo

    2018-05-01

    The simple way for silver doping of ZnO films is presented. The ZnO films were prepared by reactive rf-magnetron sputtering on silicon and sapphire substrates. Ag doping is carried out by sublimation of the Ag source located at close space at atmospheric pressure in air. Then the ZnO and ZnO-Ag films were annealed in wet media. The microstructure and optical properties of the films were compared and studied by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL). XRD results indicated that all the ZnO films have a polycrystalline hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. The annealing and Ag doping promote increasing grain's sizes and modification of grain size distribution. The effect of substrate temperature, substrate type, Ag doping and post-growth annealing of the films was studied by PL spectroscopy. The effect of Ag doping was obvious and identical for all the films, namely the wide visible bands of PL spectra are suppressed by Ag doping. The intensity of ultraviolet band increased 15 times as compared to their reference films on sapphire substrate. The ultraviolet/visible emission ratio was 20. The full width at half maximum (FWHM) for a 380 nm band was 14 nm, which is comparable with that of epitaxial ZnO. The data implies the high quality of ZnO-Ag films. Possible mechanisms to enhance UV emission are discussed.

  20. Tuning into single-band red upconversion luminescence in Yb(3+)/Ho(3+) activated nano-glass-ceramics through Ce(3+) doping.

    Science.gov (United States)

    Chen, Daqin; Zhou, Yang; Wan, Zhongyi; Ji, Zhenguo; Huang, Ping

    2015-03-28

    Yb(3+)/Ho(3+) activated glass ceramics containing β-YF3 nanocrystals were successfully fabricated. The green ((5)S2/(5)F4→(5)I8) upconversion emission is dominant in the glass ceramics and is about 160 times stronger than that of the precursor glass, resulting from the partition of lanthanide activators into a low-phonon-energy crystalline lattice and the subsequent low probability of multi-phonon nonradiative relaxation from the (5)S2/(5)F4 and (5)I6 states to the lower ones. Upon the introduction of Ce(3+) ions into nano-glass-ceramics, two efficient cross-relaxation processes between Ho(3+) and Ce(3+), i.e., Ho(3+):(5)S2/(5)F4 + Ce(3+):(2)F5/2→Ho(3+):(5)F5 + Ce(3+):(2)F7/2 and Ho(3+):(5)I6 + Ce(3+):(2)F5/2→Ho(3+):(5)I7 + Ce(3+):(2)F7/2, are demonstrated to greatly suppress the population of the green-emitting (5)S2/(5)F4 state and to enhance the population of the red-emitting (5)F5 one, leading to the intense single-band red UC radiation of Ho(3+).

  1. Electronic properties of B and Al doped graphane: A hybrid density functional study

    Science.gov (United States)

    Mapasha, R. E.; Igumbor, E.; Andriambelaza, N. F.; Chetty, N.

    2018-04-01

    Using a hybrid density functional theory approach parametrized by Heyd, Scuseria and Ernzerhof (HSE06 hybrid functional), we study the energetics, structural and electronic properties of a graphane monolayer substitutionally doped with the B (BCH) and Al (AlCH) atoms. The BCH defect can be integrated within a graphane monolayer at a relative low formation energy, without major structural distortions and symmetry breaking. The AlCH defect relaxes outward of the monolayer and breaks the symmetry. The density of states plots indicate that BCH doped graphane monolayer is a wide band gap semiconductor, whereas the AlCH defect introduces the spin dependent mid gap states at the vicinity of the Fermi level, revealing a metallic character with the pronounced magnetic features. We further examine the response of the Al dependent spin states on the multiple charge states doping. We find that the defect formation energy, structural and electronic properties can be altered via charge state modulation. The +1 charge doping opens an energy band gap of 1.75 eV. This value corresponds to the wavelength in the visible spectrum, suggesting an ideal material for solar cell absorbers. Our study fine tunes the graphane band gap through the foreign atom doping as well as via defect charge state modulation.

  2. Thermoelectric properties of doped BaHfO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow-229001, U.P India (India); Bhamu, K. C. [Department of Physics, Goa University, Goa-403 206 (India); Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Feroze Gandhi Institute of Engineering & Technology, Raebareli-229001, U.P India (India)

    2016-05-06

    We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

  3. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    KAUST Repository

    Zhao, Ying-Ying

    2015-04-24

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  4. Effect of phosphorus doping on electronic structure and photocatalytic performance of g-C{sub 3}N{sub 4}: Insights from hybrid density functional calculation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianjun, E-mail: jjliu@chnu.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); School of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000 (China)

    2016-07-05

    Graphitic carbon nitride (g-C{sub 3}N{sub 4}), as a promising visible-light photocatalyst, has wide applications on water splitting, pollutants decomposition and CO{sub 2} reduction. Herein, we investigated the electronic and optical property of pure and P doped g-C{sub 3}N{sub 4} using Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional method. The valuable features such as, the band structure, density of states, band decomposed charged density and optical absorption were computed to explore the role of phosphorus substitute N2 and C1 sites of g-C{sub 3}N{sub 4}.The results indicated that pure g-C{sub 3}N{sub 4} has an indirect band gap of about 2.73 eV, which is in good agreement with the experimental value. By doping P into N2 and C1 sites of g-C{sub 3}N{sub 4}, the band gap reduces to 2.03 and 2.22 eV, respectively. Optical absorption intensity of g-C{sub 3}N{sub 4} had a greatly enhancement in the visible region by doping P. Though narrowing the energy band of g-C{sub 3}N{sub 4} by doping P, conduction band and valance band edge of g-C{sub 3}N{sub 4} doping system still had enough potential to split water. Therefore, phosphorus doped g-C{sub 3}N{sub 4} is effective strategy to improve visible light response photocatalytic performance of g-C{sub 3}N{sub 4}. - Highlights: • For the first time, calculated band structure of P doped g-C{sub 3N}4 by Hybrid DFT method. • P doped g-C{sub 3N}4 narrowed band gap and enhanced optical absorption. • P doped g-C3{sub N4} enhanced the oxidation capacity of the valence band edge.

  5. Structural and dielectric studies of Ce doped BaSnO3 perovskite nanostructures

    Science.gov (United States)

    Angel, S. Lilly; Deepa, K.; Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Undoped and Cerium (Ce) doped BaSnO3(BSO) nanostructures were synthesized by co-precipitation method. The cubic structure and perovskite phase were confirmed by X-ray diffraction (XRD). The crystallite size of BSO is 41nm and when Ce ion concentration is increased, the crystallite sizesdecreased. The nanocube, nanocuboids and nanorods are observed from SEM analysis. The purity of the undoped and doped samples are confirmed by EDS spectrum. For larger defects, wide band gap was obtained from UV-Vis and PL spectrum. The dielectric constants are increased at low frequencies when Ce impurities are introduced in the BSO matrix at Sn site.

  6. Wide-band antireflection coatings; Breitbandige Antireflexbeschichtungen

    Energy Technology Data Exchange (ETDEWEB)

    Gombert, A.; Rommel, M. [Fraunhofer-Inst. fuer Solare Energiesysteme, Freiburg (Germany)

    1998-02-01

    In most cases, solar receivers - from solar collectors to buildings - have a transparent cover. In order to minimize the losses due to reflection, the aim is to find an AR coating which can be used for the broad bandwidth of the solar spectrum. Conventional solutions like multilayer systems with high and low refractive index layers are not suitable. The main problem is to produce layers with very low refractive indices. One solution which was investigated in the past is to synthesize layers with a low effective refractive index due to porosity; i.e. by mixing the bulk material with air on a subwavelength scale. Another possibility to achieve this mixture is given by subwave length surface-relief structures. Porous sol-gel coatings are suited for glass, subwavelength surface-relief structures can be replicated mainly in polymer materials by cheap embossing processes. (orig.) [Deutsch] Nahezu alle solaren Empfaenger sind transparent abgedeckt, z.B. durch Glascheiben. An diesen Abdeckungen wird ein Teil der einfallenden Solarstrahlung reflektiert. Diese Verluste koennen durch reflexionsmindernde Oberflaechen reduziert werden. Antireflexbeschichtungen, die z.B. fuer Brillenglaeser eingesetzt werden, eignen sich nicht fuer solare Entspiegelungen, da ihre spektrale Bandbreite nicht ausreicht. Das Hauptproblem liegt darin, dass Materialien mit sehr niedrigen Brechungsindices, wie sie fuer spektral breitbandige Antireflexbeschichtungen benoetigt werden, nicht verfuegbar sind. Der Ausweg besteht in poroesen Beschichtungen bzw. in einer Oberflaechenstrukturierung. Aufgrund des Luftanteils in der Mischung lassen sich sehr niedrige `effektive` Brechungsindices synthetisieren. Poroese Sol-Gel-Schichten eignen sich insbesondere zur Erhoehung der solaren Transmission von anorganischem Glas. Oberflaechenstrukturen sind aufgrund der Herstellbarkeit durch preisguenstige Praegeprozesse vielversprechend, finden aber derzeit ihre Anwendung ueberwiegend bei polymeren Materialien. (orig.)

  7. A Miniature Wide Band Atomic Magnetometer

    Science.gov (United States)

    2011-12-01

    Earth’s field. However, large sensitivities are obtainable in this regime, and the resulting sensors measure a vector component of the field. Thus...200 Tr an sm itt ed O pt ic al P ow er ( µ W ) Transverse Magnetic Feild , B0 (nT)   0 100 200 101 102 103 S en si tiv ity (fT /H z1 /2...this by computing the magnitude and phase of the sensitivity to noise for both the MF=3 and the MF=4 states and then adding as vectors . Because

  8. Wide band characterization of wind turbine reactors

    DEFF Research Database (Denmark)

    Holdyk, Andrzej; Arana Aristi, Ivan; Holbøll, Joachim

    2013-01-01

    This paper presents the results of field measure-ments of the impedance of two commercial available wind turbine reactors, performed by a sweep frequency response analyzer, sFRA. The measurements were taken in the frequency range from 20Hz to 20MHz. Comparable frequency behavior was found in all ...

  9. Position Localization with Impulse Ultra Wide Band

    National Research Council Canada - National Science Library

    Zhang, Guoping; Rao, S. V

    2005-01-01

    ...) bias and clock jittering error of TDOA measurement. In our prototype design, we exploit impulse UWB techniques to implement a very low cost localization system that can achieve centimeters localization for indoor applications...

  10. Wide-band cable systems at SLAC

    International Nuclear Information System (INIS)

    Struven, W.

    1983-01-01

    SLAC's first cable TV system was installed in 1979 to remotely monitor a narrow pulse which was generated in the west end of the klystron gallery. When Stanford Linear Collider (SLC) experimental work started at the west end of the accelerator, the original 1979 cable was upgraded to a bidirectional system so that 2 MBaud point-to-point data and several video and 9600 baud channels could be transmitted. The implementation of the SLC requires a complete upgrading of the accelerator control system. The system is based on a distributed processing configuration using a PDP11/780 VAX in the Main Control Center (MCC) and Intel single-board computers in a multibus configuration along the accelerator. The high-speed data linking is supplied by a 1 MBaud Time Division Multiple Access (TDMA) Network. The same cable is used to provide video, low-speed data, voice and high-speed point-to-point data services. The transmission system will utilize a wideband midsplit cable facility to collect and distribute signals to all parts of the network

  11. NEW ERBIUM DOPED ANTIMONY GLASSES FOR LASER AND GLASS AMPLIFICATION

    Directory of Open Access Journals (Sweden)

    B. Tioua

    2015-07-01

    Full Text Available Because of the special spectroscopic properties of the rare earth ions, rare earth doped glasses are widely used in bulk and fiber lasers or amplifiers. The modelling of lasers and searching for new laser transitions require a precise knowledge of the spectroscopic properties of rare earth ions in different host glasses. In this poster will offer new doped erbium glasses synthesized in silicate crucibles were obtained in the combination Sb2O3-WO3-Na2O. Several properties are measured and correlated with glass compositions. The absorption spectral studies have been performed for erbium doped glasses. The intensities of various absorption bands of the doped glasses are measured and the Judd-Ofelt parameters have been computed. From the theory of Judd-Ofelt, various radiative properties, such as transition probability, branching ratio and radiative life time for various emission levels of these doped glasses have been determined and reported. These results confirm the ability of antimony glasses for glass amplification.

  12. Fullerene-Free Organic Solar Cells with an Efficiency of 10.2% and an Energy Loss of 0.59 eV Based on a Thieno[3,4-c]Pyrrole-4,6-dione-Containing Wide Band Gap Polymer Donor.

    Science.gov (United States)

    Hadmojo, Wisnu Tantyo; Wibowo, Febrian Tri Adhi; Ryu, Du Yeol; Jung, In Hwan; Jang, Sung-Yeon

    2017-09-27

    Although the combination of wide band gap polymer donors and narrow band gap small-molecule acceptors achieved state-of-the-art performance as bulk heterojunction (BHJ) active layers for organic solar cells, there have been only several of the wide band gap polymers that actually realized high-efficiency devices over >10%. Herein, we developed high-efficiency, low-energy-loss fullerene-free organic solar cells using a weakly crystalline wide band gap polymer donor, PBDTTPD-HT, and a nonfullerene small-molecule acceptor, ITIC. The excessive intermolecular stacking of ITIC is efficiently suppressed by the miscibility with PBDTTPD-HT, which led to a well-balanced nanomorphology in the PBDTTPD-HT/ITIC BHJ active films. The favorable optical, electronic, and energetic properties of PBDTTPD-HT with respect to ITIC achieved panchromatic photon-to-current conversion with a remarkably low energy loss (0.59 eV).

  13. Broadened band C-telecom and intense upconversion emission of Er{sup 3+}/Yb{sup 3+} co-doped CaYAlO{sub 4} luminescent material obtained by an easy route

    Energy Technology Data Exchange (ETDEWEB)

    Perrella, R.V.; Schiavon, M.A. [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del Rei (UFSJ), Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João del Rei, MG (Brazil); Pecoraro, E.; Ribeiro, S.J.L. [UNESP, Institute of Chemistry, P.O. Box 355, 14800-970 Araraquara, SP (Brazil); Ferrari, J.L., E-mail: ferrari@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del Rei (UFSJ), Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João del Rei, MG (Brazil)

    2016-10-15

    This work reports on photoluminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped CaYAlO{sub 4} in powder form, synthesized by an easy route using citric acid as ligand to form complex precursor. The 1.2 mol% of Yb{sup 3+} was fixed, while the amount of Er{sup 3+} changed in 0.5, 1.5 and 3 mol% in order to evaluate the photoluminescence properties as a function of the Er{sup 3+} concentration. The structural and thermal properties of the viscous solutions and powder materials obtained after the heat-treatment at 1000, 1100 and 1200 °C for 4 h were evaluated by XRD, FTIR and TG/DTA analysis. The results showed the formation of pure CaYAlO{sub 4} tetragonal crystalline phase after heat-treatment at 1100 °C and 1200 °C. Intense emission in the visible region under excitation at 980 nm was attributed to upconversion process, from Er{sup 3+} intra-configurational f–f transitions. The emissions were assigned to the transitions {sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} and {sup 4}S{sub 3/2}→{sup 4}I{sub 15/2} (green region), and {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} (red region) energy levels. The ratio between emission band integrated areas assigned to the red and green emissions increased as a function of Er{sup 3+} concentration. Under excitation at 980 nm with 100 mW of power pump, the materials also showed intense and broadening emission with maximum at 1520 nm with FWHM of 84.74 nm for the sample CaYAlO{sub 4}:1.5% Er{sup 3+}/1.2% Yb{sup 3+} heat-treated at 1000 °C for 4 h. The photoluminescence properties showed that these materials are promising for use in C-telecom band as optical amplifier biological marker or/and solid-state laser devices under excitation at 980 nm.

  14. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    International Nuclear Information System (INIS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-01-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In 2 O 3 (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In 2 O 3 single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

  15. Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASE pumping in an EDF section

    DEFF Research Database (Denmark)

    Buxens Azcoaga, Alvaro Juan; Poulsen, Henrik Nørskov; Clausen, Anders

    2000-01-01

    A novel method is presented for implementing an L-band erbium doped fibre amplifier (EDFA) making use of forward amplified spontaneous emission pumping, from a commercially available c-band EDFA, in an erbium doped fibre. Tuning of the length of erbium doped fibre enables a flat gain characteristic...... to be obtained with a low noise figure over the entire L-band window....

  16. Nature of the valence band states in Bi2(Ca, Sr, La)3Cu2O8

    International Nuclear Information System (INIS)

    Wells, B.O.; Lindberg, P.A.P.; Shen, Z.; Dessau, D.S.; Spicer, W.E.; Lindau, I.; Mitzi, D.B.; Kapitulnik, A.

    1990-01-01

    We have used photoemission spectroscopy to examine the symmetry of the occupied states of the valence band for the La doped superconductor Bi 2 (Ca, Sr, La) 3 Cu 2 O 8 . While the oxygen states near the bottom of the 7 eV wide valence band exhibit predominantly O 2p z symmetry, the states at the top of the valence band extending to the Fermi level are found to have primarily O 2p x and O 2p y character. We have also examined anomalous intensity enhancements in the valence band feature for photon energies near 18 eV. These enhancements, which occur at photon energies ranging from 15.8 to 18.0 eV for the different valence band features, are not consistent with either simple final state effects or direct O2s transitions to unoccupied O2p states

  17. Computational Design of Flat-Band Material

    Science.gov (United States)

    Hase, I.; Yanagisawa, T.; Kawashima, K.

    2018-02-01

    Quantum mechanics states that hopping integral between local orbitals makes the energy band dispersive. However, in some special cases, there are bands with no dispersion due to quantum interference. These bands are called as flat band. Many models having flat band have been proposed, and many interesting physical properties are predicted. However, no real compound having flat band has been found yet despite the 25 years of vigorous researches. We have found that some pyrochlore oxides have quasi-flat band just below the Fermi level by first principles calculation. Moreover, their valence bands are well described by a tight-binding model of pyrochlore lattice with isotropic nearest neighbor hopping integral. This model belongs to a class of Mielke model, whose ground state is known to be ferromagnetic with appropriate carrier doping and on-site repulsive Coulomb interaction. We have also performed a spin-polarized band calculation for the hole-doped system from first principles and found that the ground state is ferromagnetic for some doping region. Interestingly, these compounds do not include magnetic element, such as transition metal and rare-earth elements.

  18. Band gap engineering of BC2N for nanoelectronic applications

    Science.gov (United States)

    Lim, Wei Hong; Hamzah, Afiq; Ahmadi, Mohammad Taghi; Ismail, Razali

    2017-12-01

    The BC2N as an example of boron-carbon-nitride (BCN), has the analogous structure as the graphene and boron nitride. It is predicted to have controllable electronic properties. Therefore, the analytical study on the engineer-able band gap of the BC2N is carried out based on the schematic structure of BC2N. The Nearest Neighbour Tight Binding (NNTB) model is employed with the dispersion relation and the density of state (DOS) as the main band gap analysing parameter. The results show that the hopping integrals having the significant effect on the band gap, band structure and DOS of BC2N nanowire (BC2NNW) need to be taken into consideration. The presented model indicates consistent trends with the published computational results around the Dirac points with the extracted band gap of 0.12 eV. Also, it is distinguished that wide energy gap of boron nitride (BN) is successfully narrowed by this carbon doped material which assures the application of BC2N on the nanoelectronics and optoelectronics in the near future.

  19. Fabrication of reduced graphene oxide nanosheets doped PVA composite films for tailoring their opto-mechanical properties

    Science.gov (United States)

    Aslam, Muhammad; Kalyar, Mazhar Ali; Raza, Zulfiqar Ali

    2017-06-01

    Laminar graphene nanosheets have raised passionate attention due to their incredible physico-chemical properties. Its wide-scale, high-yield production at low-cost has made it possible to produce top class promising versatile polymer nanocomposites. Reduced graphene oxide (RGO) nanosheets were incorporated to prepare optically tunable and high mechanical strength polymer nanocomposite films. RGO-doped poly(vinyl alcohol) (PVA) nanocomposite films were prepared via solution casting. Low level RGO doping significantly altered the structural, optical and mechanical properties of pure PVA films. Most of the band structure parameters like direct/indirect band gap, band tail, refractive index, dielectric constant, optical conductivity and dispersion parameters were investigated in detail for the first time. Tauc's, Wemple-DiDomenico, Helpin-Tsai and mixture rule models were employed to investigate optical and mechanical parameters. The applied models reinforced the experimental results in the present study. Advanced analytical techniques were engaged to characterize the nanocomposites films.

  20. Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

    NARCIS (Netherlands)

    van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

    2015-01-01

    Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

  1. Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province and School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi' an 710300 (China); Wang, Ye Feng [School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi' an 710062 (China); Wei, Dong; Chen, Yu; Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province and School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Cui, Bin [School of Chemistry and Materials Science, Northwestern University, Xi' an 710620 (China)

    2016-06-20

    A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn{sup 2+} is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the “loss-in-potential,” inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.

  2. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    International Nuclear Information System (INIS)

    Samadi, Morasae; Zirak, Mohammad; Naseri, Amene; Khorashadizade, Elham; Moshfegh, Alireza Z.

    2016-01-01

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  3. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Samadi, Morasae; Zirak, Mohammad [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Naseri, Amene [Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of); Khorashadizade, Elham [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Moshfegh, Alireza Z., E-mail: moshfegh@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of)

    2016-04-30

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  4. Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-01-01

    SnO 2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO 2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO 2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO 2 , were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO 2 single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO 2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system

  5. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y. [Department of Physics, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501 (Japan)

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  6. Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

    Science.gov (United States)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-01

    SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  7. Thin film nano-photocatalyts with low band gap energy for gas phase degradation of p-xylene: TiO2 doped Cr, UiO66-NH2 and LaBO3 (B  =  Fe, Mn, and Co)

    Science.gov (United States)

    Loc Luu, Cam; Thuy Van Nguyen, Thi; Nguyen, Tri; Nguyen, Phung Anh; Hoang, Tien Cuong; Ha, Cam Anh

    2018-03-01

    By dip-coating technique the thin films of nano-photocatalysts TiO2, Cr-doped TiO2, LaBO3 perovskites (B  =  Fe, Mn, and Co) prepared by sol-gel method, and UiO66-NH2 prepared by a solvothermal were obtained and employed for gas phase degradation of p-xylene. Physicochemical characteristics of the catalysts were examined by the methods of BET, SEM, TEM, XRD, FT-IR, TGA, Raman and UV-vis spectroscopies. The thickness of film was determined by a Veeco-American Dektek 6M instrument. The activity of catalysts was evaluated in deep photooxidation of p-xylene in a microflow reactor at room temperature with the radiation sources of a UV (λ  =  365 nm) and LED lamps (λ  =  400-510 nm). The obtained results showed that TiO2 and TiO2 doped Cr thin films was featured by an anatase phase with nanoparticles of 10-100 nm. Doping TiO2 with 0.1%mol Cr2O3 led to reduce band gap energy from 3.01 down to 1.99 eV and extend the spectrum of photon absorption to the visible region (λ  =  622 nm). LaBO3 perovkite thin films were also featured by a crystal phase with average particle nanosize of 8-40 nm, a BET surface area of 17.6-32.7 m2 g-1 and band gap energy of 1.87-2.20 eV. UiO66-NH2 was obtained in the ball shape of 100-200 nm, a BET surface area of 576 m2 g-1 and a band gap energy of 2.83 eV. The low band gap energy nano-photocatalysts based on Cr-doped TiO2 and LaBO3 perovskites exhibited highly stable and active for photo-degradation of p-xylene in the gas phase under radiation of UV-vis light. Perovskite LaFeO3 and Cr-TiO2 thin films were the best photocatalysts with a decomposition yield being reached up to 1.70 g p-xylene/g cat.

  8. Plasmonic energy transfer in periodically doped graphene

    International Nuclear Information System (INIS)

    Silveiro, I; Manjavacas, A; Thongrattanasiri, S; García de Abajo, F J

    2013-01-01

    We predict unprecedentedly large values of the energy-transfer rate between an optical emitter and a layer of periodically doped graphene. The transfer exhibits divergences at photon frequencies corresponding to the Van Hove singularities of the plasmonic band structure of the graphene. In particular, we find flat bands associated with regions of vanishing doping charge, which appear in graphene when it is patterned through gates of spatially alternating signs, giving rise to intense transfer rate singularities. Graphene is thus shown to provide a unique platform for fast control of optical energy transfer via fast electrostatic inhomogeneous doping. (paper)

  9. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

    KAUST Repository

    Zhang, Dongen

    2013-01-01

    Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.

  10. Synthesis and characterization of pure and Tb/Cu doped Alq3 nanostructures

    International Nuclear Information System (INIS)

    Salah, Numan; Habib, Sami S.; Khan, Zishan H.; Alharbi, Najlaa D.

    2013-01-01

    Tris (8-hydroxyquinoline) aluminum (Alq 3 ) is an organic semiconductor molecule, widely used in optoelectronic devices. In this work we report on fabricating different nanostructures of Alq 3 and characterize them using different techniques. Nanostructured films of Alq 3 were grown using the physical vapor condensation and thermal-vapor transport methods. The as synthesized films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and absorption spectra. Nanoparticles and nanorods/nanowires are observed in the synthesized films. Tb and Cu doped Alq 3 films were also produced and studied for their photoluminescence (PL) properties. When the original powder sample of Alq 3 was excited by 378 nm, one broad PL emission band is observed at around 515 nm. The pure nanoparticles film shows similar band with a drastic increase in the intensity by a factor of 2. This has been attributed to the large specific surface area, which might has increased the absorption and then the quantum yields. The Tb and Cu doped films show also similar band with a slight shift in the peak position to the blue region, but with further enhancement in the peak intensity, particularly that of Cu. The PL intensity of Cu doped sample is around 1.5 times stronger than that of the pure Alq 3 nanoparticles. This remarkable result on obtaining highly luminescent nanomaterial based on Cu doped Alq 3 nanoparticles film might be useful for future organic light emitting diode display devices. -- Highlights: • Films of Alq 3 nanostructures were grown using different methods. • The PL intensity of Alq 3 in its nanostructure form is enhanced by a factor of 2. • This enhancement is attributed to the large specific surface area of the nanostructures. • Films of Alq 3 nanoparticles doped with Tb and Cu showed further PL enhancement. • The Tb and Cu ions could contribute to the PL intensity of the green band of Alq3

  11. Visible light carrier generation in co-doped epitaxial titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  12. Visible light carrier generation in co-doped epitaxial titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan B., E-mail: ryan.comes@pnnl.gov; Kaspar, Tiffany C.; Chambers, Scott A. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States); Smolin, Sergey Y.; Baxter, Jason B. [Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Gao, Ran [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Apgar, Brent A. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801 (United States); Martin, Lane W. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Bowden, Mark E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  13. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  14. Bioactivity of Gradient Rare Earths Bioceramic Coating Produced by Wide-Band Laser Cladding%宽带激光熔覆梯度稀土生物陶瓷涂层的生物活性

    Institute of Scientific and Technical Information of China (English)

    李明; 汪震

    2012-01-01

    To decrease thermal crack and to raise bonding strength between substrate and bioceramic coating during laser cladding, a kind of gradient rare earths bioceramics coating is designed. And the rare earth active gradient bioceramic coating with HA and β-TCP on Ti allloy was prepared by using wide-band laser cladding technique. The surface morphologies and microstructure were analyzed by OM, SEM and XRD; the bioceramic coating was immersed in SBF to examine its bioactivity ; and the corrosion resistance of bioceramic was examed by the Electrochemical Analyzer. Results show that the rare earth active bioceramic gradient coatings which have excellent chemical metallurgy bonding at the interface consists of substrate, alloying layer and bioceramic coating. When content of Nd2O3 is up to 0.6wt.%, the amount of HA+β — TCP catalyzed during wide-band laser cladding becomes largest. Bioactivity and corrosion resistance of bioceramic coating is dependent on the amount of HA + β—TCP catalyzed. The largest amount of apatite formed on the surface of gradient bioceramic coating is complied with 0.6wt.% Nd2O3. At the same time, the corrosion resistence is best.%为了减少激光熔覆过程中基材与生物陶瓷涂层之间的热裂纹,提高涂层与基材的结合强度,设计了一种梯度稀土生物陶瓷涂层,采用宽带激光熔覆技术,在TC4钛合金表面制备了含HA+β-TCP活性相的稀土活性梯度生物陶瓷复合涂层.利用SEM、XRD分析手段对涂层形貌、相组成进行了研究;通过模拟体液(SBF)浸泡实验(浸泡7、14 d)考察了生物陶瓷涂层的生物活性;利用电化学分析仪测试了生物活性陶瓷涂层的耐腐蚀性.结果表明,当稀土氧化物Nd2O3添加量为w(Nd2O3) =0.6%时,宽带激光熔覆过程中催化合成HA +3-TCP活性相的数量最多,具有优异的表面形貌;当稀土氧化物Nd2O3添加量为w(Nd2O3)=0.6%时,梯度稀土生物陶瓷涂层在SBF中浸泡不同时间点后表面沉

  15. Hydroxynaphthyridine-derived group III metal chelates: wide band gap and deep blue analogues of green Alq3 (tris(8-hydroxyquinolate)aluminum) and their versatile applications for organic light-emitting diodes.

    Science.gov (United States)

    Liao, Szu-Hung; Shiu, Jin-Ruei; Liu, Shun-Wei; Yeh, Shi-Jay; Chen, Yu-Hung; Chen, Chin-Ti; Chow, Tahsin J; Wu, Chih-I

    2009-01-21

    A series of group III metal chelates have been synthesized and characterized for the versatile application of organic light-emitting diodes (OLEDs). These metal chelates are based on 4-hydroxy-1,5-naphthyridine derivates as chelating ligands, and they are the blue version analogues of well-known green fluorophore Alq(3) (tris(8-hydroxyquinolinato)aluminum). These chelating ligands and their metal chelates were easily prepared with an improved synthetic method, and they were facially purified by a sublimation process, which enables the materials to be readily available in bulk quantity and facilitates their usage in OLEDs. Unlike most currently known blue analogues of Alq(3) or other deep blue materials, metal chelates of 4-hydroxy-1,5-naphthyridine exhibit very deep blue fluorescence, wide band gap energy, high charge carrier mobility, and superior thermal stability. Using a vacuum-thermal-deposition process in the fabrication of OLEDs, we have successfully demonstrated that the application of these unusual hydroxynaphthyridine metal chelates can be very versatile and effective. First, we have solved or alleviated the problem of exciplex formation that took place between the hole-transporting layer and hydroxynaphthyridine metal chelates, of which OLED application has been prohibited to date. Second, these deep blue materials can play various roles in OLED application. They can be a highly efficient nondopant deep blue emitter: maximum external quantum efficiency eta(ext) of 4.2%; Commision Internationale de L'Eclairage x, y coordinates, CIE(x,y) = 0.15, 0.07. Compared with Alq(3), Bebq(2) (beryllium bis(benzoquinolin-10-olate)), or TPBI (2,2',2''-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole), they are a good electron-transporting material: low HOMO energy level of 6.4-6.5 eV and not so high LUMO energy level of 3.0-3.3 eV. They can be ambipolar and possess a high electron mobility of 10(-4) cm(2)/V s at an electric field of 6.4 x 10(5) V/cm. They are a

  16. Anomalous electron doping independent two-dimensional superconductivity

    Science.gov (United States)

    Zhou, Wei; Xing, Xiangzhuo; Zhao, Haijun; Feng, Jiajia; Pan, Yongqiang; Zhou, Nan; Zhang, Yufeng; Qian, Bin; Shi, Zhixiang

    2017-07-01

    Transition metal (Co and Ni) co-doping effects are investigated on an underdoped Ca0.94La0.06Fe2As2 compound. It is discovered that electron doping from substituting Fe with transition metal (TM = Co, Ni) can trigger high-{T}{{c}} superconductivity around 35 K, which emerges abruptly before the total suppression of the innate spin-density-wave/anti-ferromagnetism (SDW/AFM) state. Remarkably, the critical temperature for the high-{T}{{c}} superconductivity remains constant against a wide range of TM doping levels. And the net electron doping density dependence of the superconducting {T}{{c}} based on the rigid band model can be nicely scaled into a single curve for Co and Ni substitutions, in stark contrast to the case of Ba(Fe1-x TM x )2As2. This carrier density independent superconductivity and the unusual scaling behavior are presumably resulted from the interface superconductivity based on the similarity with the interface superconductivity in a La2-x Sr x CuO4-La2CuO4 bilayer. Evidence of the two-dimensional character of the superfluid by angle-resolved magneto-resistance measurements can further strengthen the interface nature of the high-{T}{{c}} superconductivity.

  17. Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

  18. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

  19. First-principles studies of doped InTaO4 for photo catalytic applications

    International Nuclear Information System (INIS)

    Hyunju, Chang; Kijeong, Kong; Yong, Soo Choi; Youngmin, Choi; Jin-Ook, Baeg; Sang-Jin, Moon

    2006-01-01

    We have calculated electronic structure of InTaO 4 using first-principle method, in order to investigate the relationship between its electronic structures and visible light absorption. We have calculated densities of states (DOS) for various states of InTaO 4 , such as pristine, oxygen vacancy, Ni-doped, and A-doped (A = C, N, and S) states. We have found that oxygen vacancy can induce the gap states and Ni-doping can narrow the band gap by generating additional states on the top of the valence band as well as on the top of the gap states. For A-doped states, it was found that N-doping and S-doping could narrow the pristine band gap inducing the additional states above the pristine valence band, while C-doping can generate the gap states in the middle of the pristine band gap. (authors)

  20. First-principles studies of doped InTaO{sub 4} for photo catalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Hyunju, Chang; Kijeong, Kong; Yong, Soo Choi; Youngmin, Choi; Jin-Ook, Baeg; Sang-Jin, Moon [Korea Research Institute of Chemical Technology, Daejeon, (Korea, Republic of)

    2006-05-15

    We have calculated electronic structure of InTaO{sub 4} using first-principle method, in order to investigate the relationship between its electronic structures and visible light absorption. We have calculated densities of states (DOS) for various states of InTaO{sub 4}, such as pristine, oxygen vacancy, Ni-doped, and A-doped (A = C, N, and S) states. We have found that oxygen vacancy can induce the gap states and Ni-doping can narrow the band gap by generating additional states on the top of the valence band as well as on the top of the gap states. For A-doped states, it was found that N-doping and S-doping could narrow the pristine band gap inducing the additional states above the pristine valence band, while C-doping can generate the gap states in the middle of the pristine band gap. (authors)

  1. On-line diagnosis of high power motors based on ultra wide band partial discharge detection; Diagnostico en linea de motores de gran capacidad mediante la deteccion de descargas parciales utilizando tecnicas de banda ultra ancha

    Energy Technology Data Exchange (ETDEWEB)

    Carvajal M, F. Antonio; Garcia Colon H, Vicente R. [Instituto de Investigaciones Electricas, Cuernavaca, Morelos (Mexico); Asiain, Tomas [Instituto Politecnico Nacional, Escuela Superior de Ingenieria Mecanica y Electrica (Mexico)

    2009-07-01

    In this work a non-standardized method for on-line diagnostic of high capacity motors based on Ultra Wide Band (UWB) Partial Discharge (PD) measuring techniques is theoretically supported, implemented and applied. The method developed is non invasive and consist in the measurement of PD in the main motor power supply cables and its ground shields connection using a near field sensor (Rogowski coil, clamp-on type) with a bandwidth of 2 to 40 MHz. The measured signals by the sensor, are stretched electronically, digitized and fed to a conventional Partial Discharge digital detector. The UWB PD detection system used displays the output in a Pulse repetition frequency-Charge-Phase angle (N-Q-?) PD pattern. The results obtained in thirteen 2500 H.P., 13.8 kV motors performed during operating in an Oil Pumping facility are presented, including its analysis and comparison with values and PD patterns reported in literature. [Spanish] En este trabajo se presentan los fundamentos teoricos, la implementacion y aplicacion de un metodo no normalizado, para el diagnostico en linea de motores de gran capacidad, basado en la deteccion de Descargas Parciales (DP) utilizando tecnicas de medicion de Banda Ultra Ancha. El metodo desarrollado es no invasivo y consiste en la medicion de las DP en los conductores y conexiones a tierra de la pantalla de los cables principales de suministro de energia al motor, utilizando un sensor de campo cercano (bobina Rogowski, tipo gancho) cuyo ancho de banda de medicion es de 2 a 40 MHz. Las senales medidas por el sensor son electronicamente procesadas para ampliar su duracion, digitalizadas y enviadas a un detector digital de Descargas Parciales convencional. El sistema de deteccion de DP en Banda Ultra Ancha despliega la medicion en un patron de DP tipo frecuencia de repeticion de Pulso-Carga-Angulo de fase (N-Q-?). Se presentan los resultados obtenidos de la evaluacion en linea de trece motores de 2500 C.P. a 13.8 kV, instalados y operando en una

  2. First principles studies of the electronic properties and catalytic activity of single-walled carbon nanotube doped with Pt clusters and chains

    International Nuclear Information System (INIS)

    Hayes, Kayla E.; Lee, Hee-Seung

    2012-01-01

    Highlights: ► Electronic and magnetic properties of (5, 5)-SWNT doped with Pt clusters and chains. ► Pt-doping can change metallic (5, 5)-SWNT to semiconducting CNT. ► Oxygen adsorption on Pt-doped (5, 5)-SWNT is barrierless process. ► Pt-doping reduces the activation barrier of oxygen dissociation reaction. ► Adsorbed oxygen has 2 O 2 - – character. - Abstract: We report the results of density functional theory calculations on the electronic structures, geometrical parameters, and magnetic properties of a wide variety of Pt clusters/chains adsorbed on metallic (5,5) single-walled carbon nanotube (SWNT). It was found that the electronic band structures of Pt/CNT systems are very sensitive to the small changes in the geometries of Pt clusters and chains. In some cases, metallic (5, 5)-SWNT becomes a small-gap semiconducting nanotube with adsorbed Pt clusters and chains. We also investigated the dissociation of molecular oxygen on the (5, 5)-SWNT doped with a single Pt atom via the nudged elastic band (NEB) method. The NEB results showed that the activation barrier is lowered even with a single Pt atom compared to that of pristine SWNT. It was found that the electronic structure of molecular oxygen adsorbed on Pt-doped CNT resembles that of 2 O 2 - , which should facilitate the dissociation process.

  3. Self-doping of polyaniline prepared with the FeCl3/H2O2 system and the origin of the Raman band of emeraldine salt at around 1375 cm−1

    Czech Academy of Sciences Publication Activity Database

    Bláha, Michal; Zedník, J.; Vohlídal, J.

    2015-01-01

    Roč. 64, č. 12 (2015), s. 1801-1807 ISSN 0959-8103 R&D Projects: GA ČR(CZ) GAP205/12/0911 Institutional support: RVO:61389013 Keywords : polyaniline * partial self-doping * polarons Subject RIV: CD - Macromolecular Chemistry Impact factor: 2.414, year: 2015

  4. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  5. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  6. Photoluminescence properties of boron doped InSe single crystals

    International Nuclear Information System (INIS)

    Ertap, H.; Bacıoğlu, A.; Karabulut, M.

    2015-01-01

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed

  7. On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

    International Nuclear Information System (INIS)

    Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

    2011-01-01

    In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

  8. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  9. Characterization and optical properties of Pr2O3-doped ...

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... Pr3+ doped molybdenum lead-borate glasses with the chemical ... Thermal, optical and structural analyses are carried out using DSC, UV and FTIR spectra. ... energy band gap (Egopt), of these glasses have been determined.

  10. Electronic and magnetic properties of 1T-HfS{sub 2} by doping transition-metal atoms

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xu, E-mail: zhaoxu@htu.cn [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Wang, Tianxing; Wang, Guangtao [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Xia, Congxin [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Yang, Lin [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang 453007 (China)

    2016-10-15

    Highlights: • Pristine 1T-HfS{sub 2} is a semiconductor with indirect gaps of 1.250 eV • Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. • Strong p–d hybridization was found between TM 3d orbitals and S 3p orbitals. • V-doped 1T-HfS{sub 2} is ideal for spin injection. - Abstract: We explored the electronic and magnetic properties of 1T-HfS{sub 2} doped by transition metal (TM) atom using the first-principles calculation. We doped the transition metal atoms from the IIIB to VIB groups in nonmagnetic 1T-HfS{sub 2}. Numerical results show that the pristine 1T-HfS{sub 2} is a semiconductor with indirect gaps of 1.250 eV. Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. The polarized charges mainly arise from the localized 3d electrons of the TM atom. The strong p–d hybridization was found between the 3d orbitals of TM and 3p orbitals of S. The substituted 1T-HfS{sub 2} can be a metal, semiconductor or half-metal. Analysis of the band structure and magnetic properties indicates that TM-doped HfS{sub 2} (TM = V, Fe, Cu) are promising systems to explore two-dimensional diluted magnetic semiconductors. The formation energy calculations also indicate that it is energetically favorable and relatively easier to incorporate transition metal atom into the HfS{sub 2} under S-rich experimental conditions. In contrast, V-doped HfS{sub 2} has relatively wide half-metallic gap and low formation energy. So V-doped 1T-HfS{sub 2} is ideal for spin injection, which is important for application in semiconductor spintronics.

  11. Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

    International Nuclear Information System (INIS)

    Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

    2012-01-01

    Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  12. Study of the Mg incorporation in CdTe for developing wide band gap Cd{sub 1-x}Mg{sub x}Te thin films for possible use as top-cell absorber in a tandem solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  13. The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

    Science.gov (United States)

    Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

    2018-01-01

    The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

  14. Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies

    Science.gov (United States)

    Teisseyre, Henryk; Lyons, John L.; Kaminska, Agata; Jankowski, Dawid; Jarosz, Dawid; Boćkowski, Michał; Suchocki, Andrzej; Van de Walle, Chris G.

    2017-06-01

    Effective acceptor doping of wide-band-gap semiconductors is still an outstanding problem. Beryllium has been suggested as a shallow acceptor in GaN, but despite sporadic announcements, Be-induced p-type doping has never been practically realized. Be-doped GaN possesses two luminescence bands; one at 3.38 eV and a second near 2.2 eV at an energy close to that of the parasitic yellow luminescence often found in undoped GaN crystals. We have performed high hydrostatic pressure studies of bulk, Be-doped gallium nitride crystals using the diamond anvil cell technique. We observed a splitting of the yellow luminescence line under hydrostatic pressure into two components, one which is strongly dependent on applied pressure and another whose pressure dependence is more modest. Together with hybrid functional calculations, we attribute the strongly-varying component to the beryllium-oxygen complex. The second component of the yellow luminescence possesses very similar pressure behavior to the yellow luminescence observed in undoped samples grown by the same method, behavior which we find consistent with the CN acceptor. At higher pressure, we observe the vanishing of yellow luminescence and a rapid increase in luminescence intensity of the UV line. We explain this as the pressure-induced transformation of the Be-O complex from a highly localized state with large lattice relaxation to a delocalized state with limited lattice relaxation.

  15. Quantum effect on the energy levels of Eu2+ doped K2Ca2(SO4)3 nanoparticles.

    Science.gov (United States)

    Salah, Numan; Habib, Sami S; Khan, Zishan H

    2010-09-01

    Quantum confinement effect on the energy levels of Eu(2+) doped K(2)Ca(2)(SO(4))(3) nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu(2+) doped K(2)Ca(2)(SO(4))(3) microcrystalline sample observed at ∼436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f(6)5d energy level of Eu(2+). Energy band gap values of the micro and nanocrystalline K(2)Ca(2)(SO(4))(3) samples were also determined by measuring the UV-visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.

  16. Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

    Science.gov (United States)

    Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2018-02-01

    A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

  17. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  18. Band Structure Engineering of Cs2AgBiBr6 Perovskite through Order-Disordered Transition: A First-Principle Study.

    Science.gov (United States)

    Yang, Jingxiu; Zhang, Peng; Wei, Su-Huai

    2018-01-04

    Cs 2 AgBiBr 6 was proposed as one of the inorganic, stable, and nontoxic replacements of the methylammonium lead halides (CH 3 NH 3 PbI 3 , which is currently considered as one of the most promising light-harvesting material for solar cells). However, the wide indirect band gap of Cs 2 AgBiBr 6 suggests that its application in photovoltaics is limited. Using the first-principle calculation, we show that by controlling the ordering parameter at the mixed sublattice, the band gap of Cs 2 AgBiBr 6 can vary continuously from a wide indirect band gap of 1.93 eV for the fully ordered double-perovskite structure to a small pseudodirect band gap of 0.44 eV for the fully random alloy. Therefore, one can achieve better light absorption simply by controlling the growth temperature and thus the ordering parameters and band gaps. We also show that controlled doping in Cs 2 AgBiBr 6 can change the energy difference between ordered and disordered Cs 2 AgBiBr 6 , thus providing further control of the ordering parameters and the band gaps. Our study, therefore, provides a novel approach to carry out band structure engineering in the mixed perovskites for optoelectronic applications.

  19. Study of optical properties of Erbium doped Tellurite glass-polymer composite

    Energy Technology Data Exchange (ETDEWEB)

    Sushama, D., E-mail: sushasukumar@gmail.com [Research Awardee, LAMP, Dept. of Physics, Nit, Calicut, India and Dept. of Physics, M.S.M. College, Kayamkulam, Kerala (India)

    2014-10-15

    Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er{sub 2}O{sub 3} doped TeO{sub 2}‐WO{sub 3}‐La{sub 2}O{sub 3} Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

  20. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Science.gov (United States)

    Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

    2017-05-01

    In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

  1. Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping

    Science.gov (United States)

    Sun, Zhuting; Burgess, Tim; Tan, H. H.; Jagadish, Chennupati; Kogan, Andrei

    2018-04-01

    We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatures T. The wire resistance R W and the zero bias resistance R C, dominated by the contacts, exhibit very different responses to temperature changes. While R W shows almost no dependence on T, R C varies by several orders of magnitude as the devices are cooled from room temperature to T = 5 K. We develop a model that employs a sharp donor level very low in the GaAs conduction band and show that our observations are consistent with the model predictions. We then demonstrate that such measurements can be used to estimate carrier properties in nanostructured semiconductors and obtain an estimate for N D, the doping density in our samples. We also discuss the effects of surface states and dielectric confinement on carrier density in semiconductor nanowires.

  2. Study of optical properties of Erbium doped Tellurite glass-polymer composite

    International Nuclear Information System (INIS)

    Sushama, D.

    2014-01-01

    Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er 2 O 3 doped TeO 2 ‐WO 3 ‐La 2 O 3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption

  3. Study of optical properties of Erbium doped Tellurite glass-polymer composite

    Science.gov (United States)

    Sushama, D.

    2014-10-01

    Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er2O3 doped TeO2-WO3-La2O3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

  4. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    T. S. N. Sales

    2017-05-01

    Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

  5. Double-wall carbon nanotubes doped with different Br2 doping levels: a resonance Raman study.

    Science.gov (United States)

    do Nascimento, Gustavo M; Hou, Taige; Kim, Yoong Ahm; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Akuzawa, Noboru; Dresselhaus, Mildred S

    2008-12-01

    This report focuses on the effects of different Br2 doping levels on the radial breathing modes of "double-wall carbon nanotube (DWNT) buckypaper". The resonance Raman profile of the Br2 bands are shown for different DWNT configurations with different Br2 doping levels. Near the maximum intensity of the resonance Raman profile, mainly the Br2 molecules adsorbed on the DWNT surface contribute strongly to the observed omega(Br-Br) Raman signal.

  6. Structural, Morphological and Optical Characterization of Eu3+ and Nd3+ Co-Doped Tio2 Nano Particles by Sol Gel Method

    Directory of Open Access Journals (Sweden)

    P. Sanjay

    2017-06-01

    Full Text Available Semiconductor nano crystals have been widely studied for their fundamental properties. The Eu3+ and Nd3+ doped titanium dioxide nano powder was successfully synthesized by sol-gel method. The morphological and structural properties of as-prepared samples were characterized by X-ray diffraction (XRD, High Resolution Transmission Electron Microscope (HRTEM. The Powder X- ray diffraction is carried out in order to examine the phase formation and substitution of Eu3+ and Nd3+ doped in TiO2 matrix. The UV-Vis spectral analysis was carried out between 200 nm and 1200 nm. The band gap of the Eu3+ and Nd3+ doped Tio2 nanoparticles was calculated. The functional groups of the synthesized compound have been identified by FTIR spectral analysis. The strong PL intensity confirms a blue shift.

  7. Effect of Mn doping on the structural and optical properties of ZrO2 thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.

    2014-01-01

    Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap

  8. Exploring routes to tailor the physical and chemical properties of oxides via doping: an STM study

    International Nuclear Information System (INIS)

    Nilius, Niklas

    2015-01-01

    Doping opens fascinating possibilities for tailoring the electronic, optical, magnetic, and chemical properties of oxides. The dopants perturb the intrinsic behavior of the material by generating charge centers for electron transfer into adsorbates, by inducing new energy levels for electronic and optical excitations, and by altering the surface morphology and hence the adsorption and reactivity pattern. Despite a vivid scientific interest, knowledge on doped oxides is limited when compared to semiconductors, which reflects the higher complexity and the insulating nature of many oxides. In fact, atomic-scale studies, aiming at a mechanistic understanding of dopant-related processes, are still scarce.In this article, we review our scanning tunneling microscopy (STM) experiments on thin, crystalline oxide films with a defined doping level. We demonstrate how the impurities alter the surface morphology and produce cationic/anionic vacancies in order to keep the system charge neutral. We discuss how individual dopants can be visualized in the lattice, even if they reside in subsurface layers. By means of STM-conductance and x-ray photoelectron spectroscopy, we determine the electronic impact of dopants, including the energies of their eigen states and local band-bending effects in the host oxide. Electronic transitions between dopant-induced gap states give rise to new optical modes, as detected with STM luminescence spectroscopy. From a chemical perspective, dopants are introduced to improve the redox potential of oxide materials. Electron transfer from Mo-donors, for example, alters the growth behavior of gold and activates O 2 molecules on a wide-gap CaO surface. Such results demonstrate the enormous potential of doped oxides in heterogeneous catalysis. Our experiments address the issue of doping from a fundamental viewpoint, posing questions on the lattice position, charge state, and electron-transfer potential of the impurity ions. Whether doped oxides are

  9. Exploring routes to tailor the physical and chemical properties of oxides via doping: an STM study

    Science.gov (United States)

    Nilius, Niklas

    2015-08-01

    Doping opens fascinating possibilities for tailoring the electronic, optical, magnetic, and chemical properties of oxides. The dopants perturb the intrinsic behavior of the material by generating charge centers for electron transfer into adsorbates, by inducing new energy levels for electronic and optical excitations, and by altering the surface morphology and hence the adsorption and reactivity pattern. Despite a vivid scientific interest, knowledge on doped oxides is limited when compared to semiconductors, which reflects the higher complexity and the insulating nature of many oxides. In fact, atomic-scale studies, aiming at a mechanistic understanding of dopant-related processes, are still scarce. In this article, we review our scanning tunneling microscopy (STM) experiments on thin, crystalline oxide films with a defined doping level. We demonstrate how the impurities alter the surface morphology and produce cationic/anionic vacancies in order to keep the system charge neutral. We discuss how individual dopants can be visualized in the lattice, even if they reside in subsurface layers. By means of STM-conductance and x-ray photoelectron spectroscopy, we determine the electronic impact of dopants, including the energies of their eigen states and local band-bending effects in the host oxide. Electronic transitions between dopant-induced gap states give rise to new optical modes, as detected with STM luminescence spectroscopy. From a chemical perspective, dopants are introduced to improve the redox potential of oxide materials. Electron transfer from Mo-donors, for example, alters the growth behavior of gold and activates O2 molecules on a wide-gap CaO surface. Such results demonstrate the enormous potential of doped oxides in heterogeneous catalysis. Our experiments address the issue of doping from a fundamental viewpoint, posing questions on the lattice position, charge state, and electron-transfer potential of the impurity ions. Whether doped oxides are

  10. Auto-combustion synthesis and characterization of Mg doped CuAlO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, Shraddha, E-mail: shraddhaa32@gmail.com; Parveen, Azra; Naqvi, A. H. [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z.H. College of Engg.& Technology, Aligarh Muslim University, Aligarh-202002 (India)

    2015-06-24

    The synthesis of pure and Mg doped Copper aluminumoxide CuAlO{sub 2}nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO{sub 2} sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO{sub 2} has been studied over a wide range of frequencies by using complex impedance spectroscopy.The variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.

  11. Fine structure of metal–insulator transition in EuO resolved by doping engineering

    Science.gov (United States)

    Averyanov, Dmitry V.; Parfenov, Oleg E.; Tokmachev, Andrey M.; Karateev, Igor A.; Kondratev, Oleg A.; Taldenkov, Alexander N.; Platunov, Mikhail S.; Wilhelm, Fabrice; Rogalev, Andrei; Storchak, Vyacheslav G.

    2018-05-01

    Metal–insulator transitions (MITs) offer new functionalities for nanoelectronics. However, ongoing attempts to control the resistivity by external stimuli are hindered by strong coupling of spin, charge, orbital and lattice degrees of freedom. This difficulty presents a quest for materials which exhibit MIT caused by a single degree of freedom. In the archetypal ferromagnetic semiconductor EuO, magnetic orders dominate the MIT. Here we report a new approach to take doping under control in this material on the nanoscale: formation of oxygen vacancies is strongly suppressed to exhibit the highest MIT resistivity jump and magnetoresistance among thin films. The nature of the MIT is revealed in Gd doped films. The critical doping is determined to be more than an order of magnitude lower than in all previous studies. In lightly doped films, a remarkable thermal hysteresis in resistivity is discovered. It extends over 100 K in the paramagnetic phase reaching 3 orders of magnitude. In the warming mode, the MIT is shown to be a two-step process. The resistivity patterns are consistent with an active role of magnetic polarons—formation of a narrow band and its thermal destruction. High-temperature magnetic polaron effects include large negative magnetoresistance and ferromagnetic droplets revealed by x-ray magnetic circular dichroism. Our findings have wide-range implications for the understanding of strongly correlated oxides and establish fundamental benchmarks to guide theoretical models of the MIT.

  12. Reward banding to determine reporting rate of recovered mourning dove bands

    Science.gov (United States)

    Tomlinson, R.E.

    1968-01-01

    Reward bands placed on the other leg of certain regularly banded immature mourning doves (Zenaidura macroura) were used to develop information on reporting rates of recovered dove bands. Reports from 15 widely separated sections of the United States showed considerable variation in recovery rate of doves both with and without reward bands. The overall percentages of banded doves that were reported as recovered were 9.69% for those with reward bands and 3.83% for controls. The bandreporting rate for states influenced by publicity was 66%; that for states not influenced was 32%.

  13. Tuning of optical and electrical properties of wide band gap Fe:SnO{sub 2}/Li:NiO p-n junctions using 80 MeV oxygen ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V.; Joshi, U.S. [Gujarat University, Department of Physics, School of Sciences, Ahmedabad (India); Avasthi, D.K. [Inter University Accelerator Centre, New Delhi (India)

    2016-12-15

    Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p-n junction diode have been investigated for advanced electronics application. Fe:SnO{sub 2}/Li:NiO p-n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO{sub 2} and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p-n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p-n junction diode was irradiated to 80 MeV O{sup +6} ions with 1 x 10{sup 12} ions/cm{sup 2} fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p-n junction diode, O{sup +6} ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p-n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p-n junction diode. (orig.)

  14. Two dimensional tunable photonic crystals and n doped semiconductor materials

    International Nuclear Information System (INIS)

    Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

    2015-01-01

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

  15. Potential thermoelectric performance of hole-doped Cu2O

    International Nuclear Information System (INIS)

    Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

    2013-01-01

    High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

  16. Electronic structures of N- and C-doped NiO from first-principles calculations

    International Nuclear Information System (INIS)

    Long, Run; English, Niall J.; Mooney, Damian A.

    2010-01-01

    The large intrinsic band gap of NiO has hindered severely its potential application under visible-light irradiation. In this Letter, we have performed first-principles calculations on the electronic properties of N- and C-doped NiO to ascertain if its band gap may be narrowed theoretically. It was found that impurity bands driven by N 2p or C 2p states appear in the band gap of NiO and that some of these locate at the conduction band minimum, which leads to a significant band gap narrowing. Our results show that N-doped NiO may serve as a potential photocatalyst relative to C-doped NiO, due to the presence of some recombination centres in C-doped NiO.

  17. Synthesis and characterization of chromium doped boehmite nanofibres

    International Nuclear Information System (INIS)

    Yang Jing; Frost, Ray L.; Yuan Yong

    2009-01-01

    Thermogravimetric and differential thermogravimetric analysis has been used to study synthesised chromium doped boehmite. The dehydroxylation temperature increases significantly from 0 to 5% doping, after which the dehydroxylation temperature shows a small steady increase up to the 20% doping level. The temperature of dehydroxylation increases with time of hydrothermal treatment. Chromium doped boehmite nanofibres were also characterised by X-ray diffraction and transmission electron microscopy. Hydrothermal treatment of doped boehmite with chromium resulted in the formation of nanofibres over a wide dopant range. Nanofibres up to 500 nm in length and between 4 and 6 nm in width were produced

  18. PULSION registered HP: Tunable, High Productivity Plasma Doping

    International Nuclear Information System (INIS)

    Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

    2011-01-01

    Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism--deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

  19. Congenital Constriction Band Syndrome

    OpenAIRE

    Rajesh Gupta, Fareed Malik, Rishabh Gupta, M.A.Basit, Dara Singh

    2008-01-01

    Congenital constriction bands are anomalous bands that encircle a digit or an extremity. Congenitalconstriction band syndrome is rare condition and is mostly associated with other musculoskeletaldisorders.We report such a rare experience.

  20. [Doping, sport and addiction--any links?].

    Science.gov (United States)

    Foucart, J; Verbanck, P; Lebrun, P

    2015-01-01

    Sport is widely encouraged as it is beneficial for health. However, high-performance sport is more and more associated to rather suspicious practices; doping is one of the best example. From a physician point of view, the use of doping agents is obviously a major concern because taking such products often induce serious adverse effects on health. The present manuscript aims to inform physicians about the most frequent doping practices. It also points out that intensive sport can generate an "addictive" behavior sharing with "common"addictions a loss of practice control, a lack of interest in other activities and even a sport's practice detrimental to athlete's health. Analysis of the doping issue needs to take this reality into account as some doping products display an established " addictive" effect.

  1. Synthesis and characterization of pure and Tb/Cu doped Alq{sub 3} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Khan, Zishan H. [Department of Applied Sciences, Faculty of Engineering and Technology, Jamia Millia, Islamia (Central University), New Delhi 110025 (India); Alharbi, Najlaa D. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Sciences Faculty for Girls, King Abdulaziz University, Jeddah-21589 (Saudi Arabia)

    2013-11-15

    Tris (8-hydroxyquinoline) aluminum (Alq{sub 3}) is an organic semiconductor molecule, widely used in optoelectronic devices. In this work we report on fabricating different nanostructures of Alq{sub 3} and characterize them using different techniques. Nanostructured films of Alq{sub 3} were grown using the physical vapor condensation and thermal-vapor transport methods. The as synthesized films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and absorption spectra. Nanoparticles and nanorods/nanowires are observed in the synthesized films. Tb and Cu doped Alq{sub 3} films were also produced and studied for their photoluminescence (PL) properties. When the original powder sample of Alq{sub 3} was excited by 378 nm, one broad PL emission band is observed at around 515 nm. The pure nanoparticles film shows similar band with a drastic increase in the intensity by a factor of 2. This has been attributed to the large specific surface area, which might has increased the absorption and then the quantum yields. The Tb and Cu doped films show also similar band with a slight shift in the peak position to the blue region, but with further enhancement in the peak intensity, particularly that of Cu. The PL intensity of Cu doped sample is around 1.5 times stronger than that of the pure Alq{sub 3} nanoparticles. This remarkable result on obtaining highly luminescent nanomaterial based on Cu doped Alq{sub 3} nanoparticles film might be useful for future organic light emitting diode display devices. -- Highlights: • Films of Alq{sub 3} nanostructures were grown using different methods. • The PL intensity of Alq{sub 3} in its nanostructure form is enhanced by a factor of 2. • This enhancement is attributed to the large specific surface area of the nanostructures. • Films of Alq{sub 3} nanoparticles doped with Tb and Cu showed further PL enhancement. • The Tb and Cu ions could contribute to the PL intensity of the green

  2. The investigation of Ce doped ZnO crystal: The electronic, optical and magnetic properties

    Science.gov (United States)

    Wen, Jun-Qing; Zhang, Jian-Min; Qiu, Ze-Gang; Yang, Xu; Li, Zhi-Qin

    2018-04-01

    The electronic, optical and magnetic properties of Ce doped ZnO crystal have been studied by using first principles method. The research of formation energies show that Ce doped ZnO is energetically stable, and the formation energies reduce from 6.25% to 12.5% for Ce molar percentage. The energy band is still direct band gap after Ce doped, and band gap increases with the increase of Cesbnd Ce distance. The Fermi level moves upward into conduction band and the DOS moves to lower energy with the increase of Ce concentration, which showing the properties of n-type semiconductor. The calculated optical properties imply that Ce doped causes a red-shift of absorption peaks, and enhances the absorption of the visible light. The transition from ferromagnetic to antiferromagnetic has been found in Ce doped ZnO.

  3. Synthesis and characterization of Ho3+ doped hafnium oxide TLD for radiation dosimeter

    International Nuclear Information System (INIS)

    Sekar, Nandakumar; Ganesan, Bharanidharan; Sahib, Hajee Reyaz Ali; Aruna, Prakasarao; Ganesan, Singaravelu; Thamilkumar, P.; Rai, R.R.

    2017-01-01

    Cancer is a dreaded disease which is treated by Radiotherapy, Chemotherapy and Surgery. Radiotherapy plays a vital role in treatment of cancer and recently measurements of invivo radiation dosimetric in patient is of great interest due to high dose gradients in advanced technology like IMRT, IGRT etc. Hence, for the last few decades, a great degree of interest has been shown for the hafnium oxide for radiation dosimetric applications, due to its high dielectric constant, wide band gap and better interface properties such as chemical stability, conduction band offset and thermodynamic stability. In the present study, Synthesis and characterization of Ho 3+ doped Hafnium oxide were carried out and its applications towards radiation dosimeter were investigated

  4. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  5. Surface correlation effects in two-band strongly correlated slabs.

    Science.gov (United States)

    Esfahani, D Nasr; Covaci, L; Peeters, F M

    2014-02-19

    Using an extension of the Gutzwiller approximation for an inhomogeneous system, we study the two-band Hubbard model with unequal band widths for a slab geometry. The aim is to investigate the mutual effect of individual bands on the spatial distribution of quasi-particle weight and charge density, especially near the surface of the slab. The main effect of the difference in band width is the presence of two different length scales corresponding to the quasi-particle profile of each band. This is enhanced in the vicinity of the critical interaction of the narrow band where an orbitally selective Mott transition occurs and a surface dead layer forms for the narrow band. For the doped case, two different regimes of charge transfer between the surface and the bulk of the slab are revealed. The charge transfer from surface/center to center/surface depends on both the doping level and the average relative charge accumulated in each band. Such effects could also be of importance when describing the accumulation of charges at the interface between structures made of multi-band strongly correlated materials.

  6. Sm 3+-doped polymer optical waveguide amplifiers

    Science.gov (United States)

    Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

    2010-04-01

    Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

  7. Electronic structure of B-doped diamond: A first-principles study

    Directory of Open Access Journals (Sweden)

    T. Oguchi

    2006-01-01

    Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

  8. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    Directory of Open Access Journals (Sweden)

    Thi Dep Ha

    2016-04-01

    Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  9. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

    2016-04-15

    Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  10. Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

    Science.gov (United States)

    Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

    2017-08-04

    We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

  11. Nonperturbative Series Expansion of Green's Functions: The Anatomy of Resonant Inelastic X-Ray Scattering in the Doped Hubbard Model

    Science.gov (United States)

    Lu, Yi; Haverkort, Maurits W.

    2017-12-01

    We present a nonperturbative, divergence-free series expansion of Green's functions using effective operators. The method is especially suited for computing correlators of complex operators as a series of correlation functions of simpler forms. We apply the method to study low-energy excitations in resonant inelastic x-ray scattering (RIXS) in doped one- and two-dimensional single-band Hubbard models. The RIXS operator is expanded into polynomials of spin, density, and current operators weighted by fundamental x-ray spectral functions. These operators couple to different polarization channels resulting in simple selection rules. The incident photon energy dependent coefficients help to pinpoint main RIXS contributions from different degrees of freedom. We show in particular that, with parameters pertaining to cuprate superconductors, local spin excitation dominates the RIXS spectral weight over a wide doping range in the cross-polarization channel.

  12. Spectroscopy of isoelectronic nitrogen impurity in epitaxial structures based on wide-region solid solutions in the system In-Ga-P-As

    International Nuclear Information System (INIS)

    Ermakov, O.N.

    1983-01-01

    Luminescence and photocurrent spectra of nitrogen-doped epitaxial structures of indirect gap alloys in In-Ga-P-As system have been studied in the wide temperature and excitation level range. The local disorder in the isoelectronic centre nearest environment is supposed to influence essentially the N-bound optjcal transitions, thus leading to the observed phonon structure smearing and broad band formation, characteristic of optical transitions with strong electron-phonon coupling. With account for light absorption in the p-region, disorder-induced N-band broadening and ''band structure effect'' relation has been obtained, allowing the nitrogen concentration determination from the intrinsic and impurity-related peak intensities ratio in photocurrent spectra of p-n structures

  13. Electrical and optical properties of Si-doped Ga2O3

    Science.gov (United States)

    Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

    2017-05-01

    The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

  14. Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

    Science.gov (United States)

    Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

    2018-06-01

    Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

  15. Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

    International Nuclear Information System (INIS)

    Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

    2012-01-01

    A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

  16. Postsynthetic Doping of MnCl2 Molecules into Preformed CsPbBr3 Perovskite Nanocrystals via a Halide Exchange-Driven Cation Exchange.

    Science.gov (United States)

    Huang, Guangguang; Wang, Chunlei; Xu, Shuhong; Zong, Shenfei; Lu, Ju; Wang, Zhuyuan; Lu, Changgui; Cui, Yiping

    2017-08-01

    Unlike widely used postsynthetic halide exchange for CsPbX 3 (X is halide) perovskite nanocrystals (NCs), cation exchange of Pb is of a great challenge due to the rigid nature of the Pb cationic sublattice. Actually, cation exchange has more potential for rendering NCs with peculiar properties. Herein, a novel halide exchange-driven cation exchange (HEDCE) strategy is developed to prepare dually emitting Mn-doped CsPb(Cl/Br) 3 NCs via postsynthetic replacement of partial Pb in preformed perovskite NCs. The basic idea for HEDCE is that the partial cation exchange of Pb by Mn has a large probability to occur as a concomitant result for opening the rigid halide octahedron structure around Pb during halide exchange. Compared to traditional ionic exchange, HEDCE is featured by proceeding of halide exchange and cation exchange at the same time and lattice site. The time and space requirements make only MnCl 2 molecules (rather than mixture of Mn and Cl ions) capable of doping into perovskite NCs. This special molecular doping nature results in a series of unusual phenomenon, including long reaction time, core-shell structured mid states with triple emission bands, and dopant molecules composition-dependent doping process. As-prepared dual-emitting Mn-doped CsPb(Cl/Br) 3 NCs are available for ratiometric temperature sensing. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Synthesis of Antimony Doped Amorphous Carbon Films

    Science.gov (United States)

    Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

    2013-06-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  18. Synthesis of Antimony Doped Amorphous Carbon Films

    International Nuclear Information System (INIS)

    Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

    2013-01-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  19. Copper doped borate dosimeters revisited

    Energy Technology Data Exchange (ETDEWEB)

    Alajerami, Y.S.M. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Department of Medical Radiography, Al-Azhar University, Gaza Strip, Palestine (Country Unknown); Hashim, S., E-mail: suhairul@utm.my [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Oncology Treatment Centre, Sultan Ismail Hospital, 81100 Johor Bahru (Malaysia); Ghoshal, S.K. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Bradley, D.A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Mhareb, M. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Saleh, M.A. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); National Atomic Energy Commission (NATEC), Sana' a (Yemen)

    2014-11-15

    We render a panoramic overview on copper (Cu) doped borate dosimeters. Preparing a dosimeter by mixing specific materials with precise weights and methods is a never-ending quest. The recommended composition is highly decisive for accurate estimation of the absorbed dose, prediction of the biological outcome, determination of the treatment dose for radiation therapy and facilitation of personal monitoring. Based on these principles, the proposed dosimeter must cover a series of dosimetric properties to realize the exact results and assessment. The doped borate dosimeters indeed demonstrate attractive thermoluminescence (TL) features. Several dedicated efforts are attempted to improve the luminescence properties by doping various transition metals or rare-earth elements. The Cu ion being one of the preferred activators shows excellent TL properties as revealed via detail comparison with other dosimeters. Two oxide states of Cu (Cu{sup +} and Cu{sup ++}) with reasonable atomic number allow easy interaction with boron network. Interestingly, the intrinsic luminescent centers of borate lattice are in cross linked with that of Cu{sup +} ions. Thus, the activation of borate dosimeter with Cu ions for the enhancement of the TL sensitivity is recognized. These dosimeters reveal similar glow curves as the standard TLD-100 (LiF:Mg,Ti) one irrespective of the use of modifiers and synthesis techniques. They display high sensitivity, low fading, dose response linearity over wide range and practical minimum detectable dose. Furthermore, the effective atomic number being the most beneficial aspect (equivalent to that of human tissue) of borate dosimeters do not show any change due to Cu ion activations. The past development, major challenges, excitement, applications, recent progress and the future promises of Cu doped borate TL dosimeters are highlighted. - Highlights: • The manuscript gives a panoramic overview on copper doped borate dosimeters. • Cu ions activated

  20. Copper doped borate dosimeters revisited

    International Nuclear Information System (INIS)

    Alajerami, Y.S.M.; Hashim, S.; Ghoshal, S.K.; Bradley, D.A.; Mhareb, M.; Saleh, M.A.

    2014-01-01

    We render a panoramic overview on copper (Cu) doped borate dosimeters. Preparing a dosimeter by mixing specific materials with precise weights and methods is a never-ending quest. The recommended composition is highly decisive for accurate estimation of the absorbed dose, prediction of the biological outcome, determination of the treatment dose for radiation therapy and facilitation of personal monitoring. Based on these principles, the proposed dosimeter must cover a series of dosimetric properties to realize the exact results and assessment. The doped borate dosimeters indeed demonstrate attractive thermoluminescence (TL) features. Several dedicated efforts are attempted to improve the luminescence properties by doping various transition metals or rare-earth elements. The Cu ion being one of the preferred activators shows excellent TL properties as revealed via detail comparison with other dosimeters. Two oxide states of Cu (Cu + and Cu ++ ) with reasonable atomic number allow easy interaction with boron network. Interestingly, the intrinsic luminescent centers of borate lattice are in cross linked with that of Cu + ions. Thus, the activation of borate dosimeter with Cu ions for the enhancement of the TL sensitivity is recognized. These dosimeters reveal similar glow curves as the standard TLD-100 (LiF:Mg,Ti) one irrespective of the use of modifiers and synthesis techniques. They display high sensitivity, low fading, dose response linearity over wide range and practical minimum detectable dose. Furthermore, the effective atomic number being the most beneficial aspect (equivalent to that of human tissue) of borate dosimeters do not show any change due to Cu ion activations. The past development, major challenges, excitement, applications, recent progress and the future promises of Cu doped borate TL dosimeters are highlighted. - Highlights: • The manuscript gives a panoramic overview on copper doped borate dosimeters. • Cu ions activated technique in borate

  1. Electron correlations in narrow band systems

    International Nuclear Information System (INIS)

    Kishore, R.

    1983-01-01

    The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

  2. First-principles study on electronic structures and magnetic properties of Eu-doped phosphorene

    Science.gov (United States)

    Luan, Zhaohui; Zhao, Lei; Chang, Hao; Sun, Dan; Tan, Changlong; Huang, Yuewu

    2017-11-01

    The structural, electronic and magnetic properties of Eu-doped phosphorene with different doping concentrations were investigated by first-principles calculations for the first time. The calculations show that Eu-doped phosphorene systems are stable and have the large magnetic moments of more than 6 μB by 2.7, 6.25 and 12.5 at.% doping concentrations. The major contribution to the magnetic moment stems from the 4f states of Eu-doped atom. Meanwhile, Eu-doped atom introduces the impurity bands which can be changed by different doping concentrations. In order to determine the magnetic interaction, the different configurations for two Eu atoms doping in 3 × 3 × 1 phosphorene supercell were studied, which reveals that all of the configurations tend to form ferromagnetic. These results can provide references for inducing large magnetism of two-dimensional phosphorene, which are valuable for their applications in spintronic devices and novel semiconductor materials.

  3. Strategies for the optimization of organic solar cells. Doped transport layers and novel oligothiophenes with reduced band gap; Strategien zur Optimierung organischer Solarzellen. Dotierte Transportschichten und neuartige Oligothiophene mit reduzierter Bandluecke

    Energy Technology Data Exchange (ETDEWEB)

    Uhrich, Christian

    2008-03-11

    derivatives used as photoactive materials were investigated. By the attachment of electron withdrawing end groups, the ionization potential of the oligothiophenes is increased and the optical band gap is reduced at the same time. The investigated thiophene derivative DCV3T acts as an acceptor in combination with the commonly used donor-materials. A back- and forth-transfer of excitation energy is observed in blends of DCV3T and fullerene C{sub 60}. In these blends, excitons are not separated into free charge carriers. This back and forth transfer leads to an enhancement of the density of triplet excitons on DCV3T. These excitons have a potentially high diffusion length due to the long lifetime of triplet excitons. This effect was utilized in the organic solar cells. (orig.)

  4. Behaviour of superconductivity energetic characteristics in electron-doped cuprates. A simple model

    International Nuclear Information System (INIS)

    Kristoffel, N.; Rubin, P.

    2008-01-01

    A simple model to describe the energetic phase diagram of electron-doped cuprate superconductor is developed. Interband pairing operates between the UHB and the defect states created by doping and supplied by both extincting HB-s. Two defect subbands correspond to the (π,0) and (π/2,π/2) momentum regions. Extended doping quenches the bare normal state gaps (pseudogaps). Maximal transition temperature corresponds to overlapping bands ensemble intersected by the chemical potential. Illustrative results for T c , pseudo- and superconducting gaps are calculated on the whole doping scale. Major characteristic features on the phase diagram are reproduced. Anticipated manifestation of gaps doping dynamics is discussed

  5. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  6. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  7. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  8. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

    Science.gov (United States)

    Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

    2014-01-01

    Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

  9. Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure.

    Science.gov (United States)

    Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia

    2018-03-16

    We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

  10. Optoelectronic Properties of X-Doped (X = O, S, Te Photovoltaic CSe with Puckered Structure

    Directory of Open Access Journals (Sweden)

    Qiang Zhang

    2018-03-01

    Full Text Available We exploited novel two-dimensional (2D carbon selenide (CSe with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te, i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

  11. Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dong-Wook, E-mail: shindong37@skku.edu; Kim, Tae Sung; Yoo, Ji-Beom, E-mail: jbyoo@skku.edu

    2016-10-15

    Highlights: • Substitution doping is a promising method for opening the energy band gap of graphene. • Substitution doping with phosphorus in the graphene lattice has numerous advantage such as high band gap, low formation energy, and high net charge density compared to nitrogen. • V{sub dirac} of Inductively coupled plasma (ICP) and triphenylphosphine (TPP) treated graphene was −57 V, which provided clear evidence of n-type doping. • Substitutional doping of graphene with phosphorus is verified by the XPS spectra of P 2p core level and EELS mapping of phosphorus. • The chemical bonding between P and graphene is very stable for a long time in air (2 months). - Abstract: Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a V{sub dirac} of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

  12. Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

    Science.gov (United States)

    Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

    2018-05-01

    Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

  13. Interactions between graphene oxide and wide band gap semiconductors

    International Nuclear Information System (INIS)

    Kawa, M; Podborska, A; Szaciłowski, K

    2016-01-01

    The graphene oxide (GO) and GO@TiO 2 nanocomposite have been synthesised by using modified Hummers method and ultrasonics respectively. The materials were characterized by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis absorption spectroscopy. It was found that the interaction between GO and TiO 2 affects the average interlayer spacing in carbonaceous material. The formation of bonds between various oxygen-containing functional groups and surface of titanium dioxide was investigated. One of them formed between the quinone structures (occur in graphene oxide) and titanium atoms exhibited 1.5 bond order. Furthermore the charge-transfer processes in GO@TiO 2 composite were observed. (paper)

  14. Statistical-mechanics approach to wide-band digital communication.

    Science.gov (United States)

    Efraim, Hadar; Peleg, Yitzhak; Kanter, Ido; Shental, Ori; Kabashima, Yoshiyuki

    2010-12-01

    The emerging popular scheme of fourth generation wireless communication, orthogonal frequency-division multiplexing, is mapped onto a variant of a random field Ising Hamiltonian and results in an efficient physical intercarrier interference (ICI) cancellation decoding scheme. This scheme is based on Monte Carlo (MC) dynamics at zero temperature as well as at the Nishimori temperature and demonstrates improved bit error rate (BER) and robust convergence time compared to the state of the art ICI cancellation decoding scheme. An optimal BER performance is achieved with MC dynamics at the Nishimori temperature but with a substantial computational cost overhead. The suggested ICI cancellation scheme also supports the transmission of biased signals.

  15. Inkjet-Printed Ultra Wide Band Fractal Antennas

    KAUST Repository

    Maza, Armando Rodriguez

    2012-01-01

    reduction, a Cantor-based fractal antenna which performs a larger bandwidth compared to previously published UWB Cantor fractal monopole antenna, and a 3D loop fractal antenna which attains miniaturization, impedance matching and multiband characteristics

  16. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  17. DC feedback for wide band frequency fixed current source

    Directory of Open Access Journals (Sweden)

    Aoday Hashim Mohamad Al-Rawi

    2013-03-01

    Full Text Available Alternating current sources are mainly used in bioelectrical impedance devices. Nowadays 50 – 100 kHz bioelectrical impedance devices are commonly used for body composition analysis. High frequency bioelectrical impedance analysis devices are mostly used in bioimpedance tomography and blood analysis. High speed op-amps and voltage comparators are used in this circuit. Direct current feedback is used to prevent delay. An N-Channel J-FET transistor was used to establish the voltage controlled gain amplifier (VCG. A sine wave signal has been applied as input voltage. The value of this signal should be constant in 170 mV rms to keep the output current in about 1 mA rms. Four frequencies; 100 kHz, 1 MHz, 2 MHz and 3.2 MHz were applied to the circuit and the current was measured for different load resistances. The results showed that the current was stable for changes in the resistor load, bouncing around an average point as a result of bouncing DC feedback.

  18. Wide Band Low Noise Love Wave Magnetic Field Sensor System.

    Science.gov (United States)

    Kittmann, Anne; Durdaut, Phillip; Zabel, Sebastian; Reermann, Jens; Schmalz, Julius; Spetzler, Benjamin; Meyners, Dirk; Sun, Nian X; McCord, Jeffrey; Gerken, Martina; Schmidt, Gerhard; Höft, Michael; Knöchel, Reinhard; Faupel, Franz; Quandt, Eckhard

    2018-01-10

    We present a comprehensive study of a magnetic sensor system that benefits from a new technique to substantially increase the magnetoelastic coupling of surface acoustic waves (SAW). The device uses shear horizontal acoustic surface waves that are guided by a fused silica layer with an amorphous magnetostrictive FeCoSiB thin film on top. The velocity of these so-called Love waves follows the magnetoelastically-induced changes of the shear modulus according to the magnetic field present. The SAW sensor is operated in a delay line configuration at approximately 150 MHz and translates the magnetic field to a time delay and a related phase shift. The fundamentals of this sensor concept are motivated by magnetic and mechanical simulations. They are experimentally verified using customized low-noise readout electronics. With an extremely low magnetic noise level of ≈100 pT/[Formula: see text], a bandwidth of 50 kHz and a dynamic range of 120 dB, this magnetic field sensor system shows outstanding characteristics. A range of additional measures to further increase the sensitivity are investigated with simulations.

  19. Wide-band polarization controller for Si photonic integrated circuits.

    Science.gov (United States)

    Velha, P; Sorianello, V; Preite, M V; De Angelis, G; Cassese, T; Bianchi, A; Testa, F; Romagnoli, M

    2016-12-15

    A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform. This circuit allows us to adapt any polarization into the standard fundamental TE mode of a Si waveguide and, conversely, to control the polarization and set it to any arbitrary polarization state. In addition, the integrated thermal tuning allows kilohertz speed which can be used to perform a polarization scrambler. The circuit was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.

  20. Advanced electron microscopy of wide band-gap semiconductor materials

    International Nuclear Information System (INIS)

    Fay, M.W.

    2000-10-01

    The microstructure of GaN layers grown by metal organic vapour phase epitaxy on (0001) sapphire substrates using a novel precursor for deposition of AlN buffer layers has been investigated and compared to layers grown using low temperature GaN buffer layers and state-of-the-art material. It has been shown that the quality of layers grown using the novel precursor is comparable to the state-of-the-art material. TEM analysis has been performed of multiple quantum wells of InGaN grown within GaN epitaxial layers by metal organic vapour phase epitaxy. Elementally sensitive TEM techniques have been used to determine the spatial distribution of In and Ga within these structures. Fluctuations in In sensitive images are observed on the nm-scale. Clear evidence of segregation of In during layer growth has been seen. Models of the In segregation are in good agreement with experimental results. Elementally sensitive techniques have been used to investigate the elemental distributions in TiAl and NiAu contacts to GaN. Annealing of TiAl contacts has been seen to result in the formation of a thin interfacial Ti rich phase, and of N depletion at the surface of the GaN layer to the depth of tens of nm. Annealing NiAu contacts at 700 deg. C was seen to result in the formation of Ga-rich interfacial phases, of both crystalline and amorphous structure. ZnS and ZnCdS layers grown on (001) GaP supplied by the University of Hull have been investigated. ZnS layers were found to contain a high density of inclined stacking faults throughout the layer, originating from the interface with the substrate. Energy sensitive techniques have been used to investigate ZnCdS quantum well structures. The use of a ZnCdS superlattice structure around a ZnCdS quantum well to approximate a reduced barrier was seen to result in less thickness variations than when no barrier was used. (author)