Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping

Science.gov (United States)

Habib, Muhammad; Muhammad, Zahir; Khan, Rashid; Wu, Chuanqiang; Rehman, Zia ur; Zhou, Yu; Liu, Hengjie; Song, Li

2018-03-01

Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe2 single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe2 crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe2, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.

Single and couple doping ZnO nanocrystals characterized by positron techniques

Science.gov (United States)

Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

2015-04-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

Single and couple doping ZnO nanocrystals characterized by positron techniques

International Nuclear Information System (INIS)

Pasang, Tenzin; Namratha, Keerthiraj; Byrappa, Kullaiah; Guagliardo, Paul; Ranganathaiah, Chikkakuntappa; Samarin, S; Williams, J F

2015-01-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag 1+ and Pd 2+ dopants occupy interstitial sites of the ZnO lattice and single Ru 3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn 4+ + Co 2+ ) shows similar CDB ratios as Ru 3+ single-doping. Also co-doping with (Ag 1+ + Pd 2+ ) or (Ag 1+ + W 6+ ) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material. (paper)

Study of the Local Environment of Mn Ions Implanted in GaSb

International Nuclear Information System (INIS)

Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Barcz, A.; Hallen, A.; Arvanitis, D.

2010-01-01

The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation. (author)

Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

International Nuclear Information System (INIS)

Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

2006-01-01

We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

Science.gov (United States)

Renteria, E. J.; Muniz, A. J.; Addamane, S. J.; Shima, D. M.; Hains, C. P.; Balakrishnan, G.

2015-05-01

The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2- μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

Energy Technology Data Exchange (ETDEWEB)

Timm, R.

2007-12-14

In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

Tips for School Districts: GASB's New Fund Balance Standards

Science.gov (United States)

Mead, Dean Michael

2010-01-01

In March 2009, the Governmental Accounting Standards Board (GASB) issued Statement No. 54, "Fund Balance Reporting and Governmental Fund Type Definitions." School districts that prepare financial reports based on generally accepted accounting principles are required to implement this standard no later than the first fiscal year that starts after…

Sublimation Properties of Pentaerythritol Tetranitrate Single Crystals Doped with Its Homologs

Energy Technology Data Exchange (ETDEWEB)

Bhattacharia, Sanjoy K.; Maiti, Amitesh; Gee, Richard H.; Weeks, Brandon L.

2012-07-20

Pentaerythritol tetranitrate (PETN) is a secondary explosive used extensively in military and commercial applications. Coarsening of PETN during long-term storage changes the physical properties such as surface area and particle morphology which are important factors in initiation and performance. Doping of impurities was proposed to slow the coarsening process since impurities were shown to modify both the kinetic and thermodynamic properties. In this paper, we discuss how doping of PETN with its homologs of dipentaerythritol hexanitrate (diPEHN) and tripentaerytritol octanitrate (triPEON) affect kinetic and thermodynamic parameters. Pure and homolog doped PETN single crystals were prepared by solvent evaporation in acetone at room temperature. Doping concentrations for this study were 1000 ppm, 5000 ppm, and 10000 ppm. Activation energy and vapor pressure of pure and doped PETN single crystals were obtained from thermogravimetric analysis data.

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

2013-01-01

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

Single-frequency thulium-doped distributed-feedback fibre laser

DEFF Research Database (Denmark)

Agger, Søren; Povlsen, Jørn Hedegaard; Varming, Poul

2004-01-01

We have successfully demonstrated a single-frequency distributed-feedback (DFB) thulium-doped silica fiber laser emitting at a wavelength of 1735 nm. The laser cavity is less than 5 cm long and is formed by intracore UV-written Bragg gratings with a phase shift. The laser is pumped at 790 nm from...... a Ti:sapphire laser and has a threshold pump power of 59 mW. The laser has a maximum output power of 1 mW in a singlefrequency, single-polarization radiation mode and is tunable over a few nanometers. To the best of the authors’ knowledge, this is the first report of a single-frequency DFB fiber laser...... that uses thulium as the amplifying medium. The lasing wavelength is the longest demonstrated with DFB fiber lasers and yet is among the shortest obtained for thulium-doped silica fiber lasers....

Beryllium implant activation and damage recovery study in n-type GaSb

Science.gov (United States)

Rahimi, N.; Behzadirad, M.; Renteria, Emma J.; Shima, D. M.; Muniz, Ayse J.; Busani, T.; Lavrova, Olga; Balakrishnan, G.; Lester, L. F.

2014-03-01

Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.

Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [{sup 68}Ga]SB3 and PET/CT

Energy Technology Data Exchange (ETDEWEB)

Maina, Theodosia; Charalambidis, David; Nock, Berthold A. [INRASTES, NCSR ' ' Demokritos' ' , Molecular Radiopharmacy, Athens (Greece); Bergsma, Hendrik; Krenning, Eric P. [Erasmus MC, Department of Nuclear Medicine, Rotterdam (Netherlands); Kulkarni, Harshad R.; Mueller, Dirk; Baum, Richard P. [Zentralklinik, Molecular Radiotherapy and Molecular Imaging, Bad Berka (Germany); Jong, Marion de [Erasmus MC, Department of Nuclear Medicine, Rotterdam (Netherlands); Erasmus MC, Department of Radiology, Rotterdam (Netherlands)

2016-05-15

Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [{sup 99m}Tc]DB1 ({sup 99m}Tc-N{sub 4}'-DPhe{sup 6},Leu-NHEt{sup 13}BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [{sup 68}Ga]SB3, a [{sup 99m}Tc]DB1 mimic-carrying, instead of the {sup 99m}Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal {sup 68}Ga. Competition binding assays of SB3 and [{sup nat}Ga]SB3 were conducted against [{sup 125}I-Tyr{sup 4}]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [{sup 67}Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [{sup 67}Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [{sup 68}Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [{sup nat}Ga]SB3 bound to the human GRPR with high affinity (IC{sub 50}: 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [{sup 67}Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [{sup 67}Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (∼160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [{sup 68}Ga]SB3 elicited no adverse effects and

Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun

2014-04-28

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

Energy Technology Data Exchange (ETDEWEB)

Kalkan, B. [Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, California 20015 (United States); Edwards, T. G.; Sen, S. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Raoux, S. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2013-08-28

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

Science.gov (United States)

Kalkan, B.; Edwards, T. G.; Raoux, S.; Sen, S.

2013-08-01

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ˜5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous → β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ˜2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

International Nuclear Information System (INIS)

Kalkan, B.; Edwards, T. G.; Sen, S.; Raoux, S.

2013-01-01

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression

GASB's New Financial Reporting Model: Implementation Project for School Districts.

Science.gov (United States)

Bean, David; Glick, Paul

1999-01-01

In June 1999, the Governmental Accounting Standards Board (GASB) issued its statement on the structure of the basic financial reporting model for state and local governments. Explains the new financial reporting model and reviews the implementation issues that school districts will need to address. (MLF)

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

Directory of Open Access Journals (Sweden)

Laura B. Ruppalt

2014-12-01

Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption

Energy Technology Data Exchange (ETDEWEB)

Kim, HoKwon; Renault, Olivier; Rouchon, Denis; Mariolle, Denis; Chevalier, Nicolas [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tyurnina, Anastasia; Simonato, Jean-Pierre; Dijon, Jean [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LITEN, Minatec Campus, F-38054 Grenoble (France)

2014-07-07

We report on the efficiency and thermal stability of p-doping by iodine on single and randomly stacked, weakly coupled bilayer polycrystalline graphene, as directly measured by photoelectron emission microscopy. The doping results in work function value increase of 0.4–0.5 eV, with a higher degree of iodine uptake by the bilayer (2%) as compared to the single layer (1%) suggesting iodine intercalation in the bilayer. The chemistry of iodine is identified accordingly as I{sub 3}{sup −} and I{sub 5}{sup −} poly iodide anionic complexes with slightly higher concentration of I{sub 5}{sup −} in bilayer than monolayer graphene, likely attributed to differences in doping mechanisms. Temperature dependent in-situ annealing of the doped films demonstrated that the doping remains efficient up to 200 °C.

Synthesis and characterization of single-phase Mn-doped ZnO

Science.gov (United States)

Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

2009-05-01

Different samples of Zn 1-xMn xO series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation ( τ1) at defect site ( τ2) and average ( τav) increases with milling time.

Synthesis and characterization of single-phase Mn-doped ZnO

International Nuclear Information System (INIS)

Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

2009-01-01

Different samples of Zn 1-x Mn x O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2 O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (τ 1 ) at defect site (τ 2 ) and average (τ av ) increases with milling time.

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

International Nuclear Information System (INIS)

Miya, S.S.; Wagener, V.; Botha, J.R.

2012-01-01

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga 1−x In x Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga 1−x In x Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga 1−x In x Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Energy Technology Data Exchange (ETDEWEB)

Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751 005 (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Das, T. D. [Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2014-07-21

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

International Nuclear Information System (INIS)

Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

2011-01-01

In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

Electrolytic coloration and spectral properties of hydroxyl-doped potassium chloride single crystals

International Nuclear Information System (INIS)

Gu Hongen; Wu Yanru

2011-01-01

Hydroxyl-doped potassium chloride single crystals are colored electrolytically at various temperatures and voltages using a pointed cathode and a flat anode. Characteristic OH - spectral band is observed in the absorption spectrum of uncolored single crystal. Characteristic O - , OH - , U, V 2 , V 3 , O 2- -V a + , F, R 2 and M spectral bands are observed simultaneously in absorption spectra of colored single crystals. Current-time curve for electrolytic coloration of hydroxyl-doped potassium chloride single crystal and its relationship with electrolytic coloration process are given. Production and conversion of color centers are explained. - Highlights: → Expanded the traditional electrolysis method. → Hydroxyl-doped potassium chloride crystals were colored electrolytically for the first time. → Useful V, F and F-aggregate color centers were produced in colored crystals. → V color centers were produced directly and F and F-aggregate color centers indirectly.

Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

Energy Technology Data Exchange (ETDEWEB)

Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

2017-03-31

Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of In

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

Energy Technology Data Exchange (ETDEWEB)

Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

2017-02-24

The etch rates of NH₄OH:H₂O₂ and C₆H₈O₇:H₂O₂ for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH₄OH:H₂O₂ solution has a greater etch rate differential for the GaSb/GaAs material system than C₆H₈O₇:H₂O₂ solution. The selectivity of NH₄OH:H₂O₂ for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C₆H₈O₇:H₂O₂ has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

Synthesis and characterization of single-phase Mn-doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D. [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, West Bengal (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.i [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, West Bengal (India); Chattopadhyay, S. [Department of Physics, Taki Government College, Taki 743 429, West Bengal (India); Sarkar, A. [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009, West Bengal (India)

2009-05-01

Different samples of Zn{sub 1-x}Mn{sub x}O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn{sub 2}O{sub 4} apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (tau{sub 1}) at defect site (tau{sub 2}) and average (tau{sub av}) increases with milling time.

Electrolytic coloration and spectral properties of hydroxyl-doped potassium bromide single crystals

International Nuclear Information System (INIS)

Qi, Lan; Song, Cuiying; Gu, Hongen

2013-01-01

Hydroxyl-doped potassium bromide single crystals are colored electrolytically at various temperatures and voltages by using a pointed cathode and a flat anode. The characteristic OH − spectral band is observed in absorption spectrum of uncolored single crystal. The characteristic O − , OH − , U, V 2 , O 2− −V a + , M L1 , F and M spectral bands are observed simultaneously in absorption spectra of colored single crystals. Current–time curve for electrolytic coloration of hydroxyl-doped potassium bromide single crystal and its relationship with electrolytic coloration processes are given. Production and conversion of color centers are explained. - Highlights: ► We expanded the traditional electrolysis method. ► Hydroxyl-doped potassium bromide crystals were colored electrolytically for the first time. ► Useful V, F and F-aggregate color centers were produced in colored crystals. ► V color centers were produced directly and F as well as F-aggregate color centers indirectly.

Transport properties of a potassium-doped single-wall carbon nanotube rope

International Nuclear Information System (INIS)

Lee, R. S.; Kim, H. J.; Fischer, J. E.; Lefebvre, J.; Radosavljevic, M.; Hone, J.; Johnson, A. T.

2000-01-01

Four-probe resistance vs temperature and gate voltage are reported for an individual single-wall carbon nanotube rope before and after doping in situ with potassium. All the features in R(T) from unoriented bulk material, before and after doping, are qualitatively reproduced by the rope data. The 5.3 K conductance of the pristine rope decreases with positive gate voltage, while G vs V g becomes featureless after K doping. (c) 2000 The American Physical Society

Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals

Energy Technology Data Exchange (ETDEWEB)

Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H

1997-07-01

The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

The design and numerical analysis of tandem thermophotovoltaic cells

International Nuclear Information System (INIS)

Yang Hao-Yu; Liu Ren-Jun; Wang Lian-Kai; Lü You; Li Tian-Tian; Li Guo-Xing; Zhang Yuan-Tao; Zhang Bao-Lin

2013-01-01

In this paper, numerical analysis of GaSb =(E g = 0.72 eV)/Ga 0.84 In 0.16 As 0.14 Sb 0.86 (E g = 0.53 eV) tandem thermophotovoltaic (TPV) cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GaInAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single- and dual-junction TPV cells, including I–V characteristic, maximum output power (P max ), open-circuit voltage (V oc ), short-circuit current (I sc ), etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GaInAsSb single junction cells shows that the P max of tandem cells is almost twice as great as that of the single-junction cells. (interdisciplinary physics and related areas of science and technology)

Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

Energy Technology Data Exchange (ETDEWEB)

Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-14

In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

Optical properties of single doped Cr3+ and co-doped Cr3+-Nd3+ aluminum tantalum tellurite glasses

International Nuclear Information System (INIS)

Rodriguez-Mendoza, U.R.; Speghini, A.; Jaque, D.; Zambelli, M.; Bettinelli, M.

2004-01-01

The optical properties for single doped Cr 3+ and co-doped Cr 3+ -Nd 3+ aluminum tantalum tellurite glasses have been studied as a function of temperature. For the single doped glass, the existence of two bands in the emission spectra at low temperature indicates the presence of two different sites for the Cr 3+ ions, labelled as usual as low- and high-field sites. The broad band centred in the Near Infrared region, corresponds to low-field sites transition 4 T 2 → 4 A 2 , and the narrow band centred at approximately 715 nm to the high-field sites transition 2 E→ 4 A 2 . The emission intensity for both high- and low-field sites shows a strong decrease with increasing temperature, with the emission for the former sites vanishing at RT. In both cases the quenching observed with the increase of temperature can be ascribed to the presence of non-radiative relaxation mechanisms. Experimental observations for the co-doped glass show that both radiative and non-radiative energy transfer processes from Cr 3+ to Nd 3+ are present

Non-metal single/dual doped carbon quantum dots: a general flame synthetic method and electro-catalytic properties

Science.gov (United States)

Han, Yuzhi; Tang, Di; Yang, Yanmei; Li, Chuanxi; Kong, Weiqian; Huang, Hui; Liu, Yang; Kang, Zhenhui

2015-03-01

A combustion flame method is developed for the convenient and scalable fabrication of single- and dual-doped carbon quantum dots (CQDs) (N-CQDs, B-CQDs, P-CQDs, and S-CQDs and dual-doped B,N-CQDs, P,N-CQDs, and S,N-CQDs), and the doping contents can be easily adjusted by simply changing the concentrations of precursors in ethanol. These single/dual-doped CQDs, especially B,N-CQDs, show high catalytic activities for the oxygen reduction reaction.A combustion flame method is developed for the convenient and scalable fabrication of single- and dual-doped carbon quantum dots (CQDs) (N-CQDs, B-CQDs, P-CQDs, and S-CQDs and dual-doped B,N-CQDs, P,N-CQDs, and S,N-CQDs), and the doping contents can be easily adjusted by simply changing the concentrations of precursors in ethanol. These single/dual-doped CQDs, especially B,N-CQDs, show high catalytic activities for the oxygen reduction reaction. Electronic supplementary information (ESI) available: TEM images, UV-Vis absorption, PL, Raman, FTIR, XPS, CV, and LSV data of single/dual doped CQDs, a table for the calculated mass concentrations of different atoms in various B, N, P or S containing CQDs and a table for summary of the ORR performance of various catalysts in an O2-saturated 0.1 M KOH solution. See DOI: 10.1039/c4nr07116f

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

A stable wavelength-tunable single frequency and single polarization linear cavity erbium-doped fiber laser

International Nuclear Information System (INIS)

Feng, T; Yan, F P; Li, Q; Peng, W J; Tan, S Y; Feng, S C; Wen, X D; Liu, P

2013-01-01

We report the configuration and operation of a wavelength-tunable single frequency and single polarization erbium-doped fiber laser (EDFL) with a stable and high optical signal to noise ratio (OSNR) laser output. A narrow-band fiber Bragg grating (NBFBG), a FBG-based Fabry–Perot (FP) filter, a polarization controller (PC) and an unpumped erbium-doped fiber (EDF) as a saturable absorber (SA) are employed to realize stable single frequency lasing operation. An all-fiber polarizer (AFP) is introduced to suppress mode hopping and ensure the single polarization mode operation. By adjusting the length of the NBFBG using a stress adjustment module (SAM), four stable single frequency and single polarization laser outputs at wavelengths of 1544.946, 1545.038, 1545.118 and 1545.182 nm are obtained. At room temperature, performance with an OSNR of larger than 60 dB, power fluctuation of less than 0.04 dB, wavelength variation of less than 0.01 nm for about 5 h measurement, and degree of polarization (DOP) of close to 100% has been experimentally demonstrated for the fiber laser operating at these four wavelengths. (paper)

The micro-magnetic structures of Mn sup + ion-implanted GaSb

CERN Document Server

Zhang Fu Qiang; Liu Zhi Kai

2003-01-01

The micro-magnetic structures of Mn sup + ion-implanted GaSb are studied using a magnetic force microscope (MFM). MFM images reveal that there are many magnetic domains with different magnetization directions in our samples. The magnetic domain structures and the magnetization direction of typical MFM patterns are analyzed by numeric simulation. (author)

Diagnostic and characterization of the VCSEL diodes based on GaSb

Czech Academy of Sciences Publication Activity Database

Matulková, Irena; Cihelka, Jaroslav; Vyskočil, Jan; Zelinger, Zdeněk; Hulicius, Eduard; Šimeček, Tomislav; Civiš, Svatopluk

2010-01-01

Roč. 99, 1-2 (2010), s. 333-338 ISSN 0946-2171 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z10100521 Keywords : VCSEL diode s * FTIR * GaSb Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.239, year: 2010

Optimization of growth parameters for MOVPE-grown GaSb and Ga{sub 1-x}In{sub x}Sb

Energy Technology Data Exchange (ETDEWEB)

Miya, S.S.; Wagener, V. [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa); Botha, J.R., E-mail: reinhardt.botha@nmmu.ac.za [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa)

2012-05-15

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 Degree-Sign C at atmospheric pressure. Trimethylindium was added in the case of Ga{sub 1-x}In{sub x}Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga{sub 1-x}In{sub x}Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga{sub 1-x}In{sub x}Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

The characterization of tungsten disulfide single crystals doped with gold

International Nuclear Information System (INIS)

Dumcenco, D.O.; Huang, Y.S.; Tiong, K.K.; Liang, C.H.; Chen, C.H.

2007-01-01

Single crystals of WS 2 doped with gold (WS 2 :Au) have been grown by the chemical vapour transport method using iodine as a transporting agent. Hall measurements indicate that the samples are p-type in nature. The doping effect of the materials are characterized by conductivity, surface photovoltage and piezo reflectance measurements. The higher conductivity respect to that of the undoped one suggests that more charge carriers are available for conduction in the doped compound. The surface photovoltage spectrum reveals an impurity level located below the A exciton. The direct band-edge excitonic transition energies for WS 2 :Au show redshifts and the broadening parameters of the excitonic transition features increase due to impurity scattering. (authors)

A localized orbital description of ideal vacancies in GaP and GaSb

International Nuclear Information System (INIS)

Erbarut, E.; Tomak, M.

1986-10-01

Gaussian orbitals of s and p symmetry and an empirical pseudopotential Hamiltonian is employed for the study of electronic structures of ideal vacancies in GaP and GaSb. A reasonably accurate description of band structures and densities of states are attained. (author)

Tunable single-polarization single-longitudinal-mode erbium-doped fiber ring laser employing a CMFBG filter and saturable absorber

Science.gov (United States)

Feng, Suchun; Lu, Shaohua; Peng, Wanjing; Li, Qi; Feng, Ting; Jian, Shuisheng

2013-04-01

A tunable single-polarization single-longitudinal-mode (SLM) erbium-doped fiber ring laser is proposed and demonstrated. For the first time as we know, a chirped moiré fiber Bragg grating (CMFBG) filter with ultra-narrow transmission band and a uniform fiber Bragg grating (UFBG) are used to select the laser longitudinal mode. The stable SLM operation of the fiber laser is guaranteed by the combination of the CMFBG filter and 3 m unpumped erbium-doped fiber acting as a saturable absorber. The single polarization operation of the fiber laser is obtained by using an inline broadband polarizer. A tuning range of about 0.7 nm with about 0.1 nm step is achieved by stretching the uniform FBG.

Blue luminescence in Tm3+-doped KGd(WO4)2 single crystals

International Nuclear Information System (INIS)

Gueell, F.; Mateos, X.; Gavalda, Jna.; Sole, R.; Aguilo, M.; Diaz, F.; Massons, J.

2004-01-01

Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO 4 ) 2 single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO 4 ) 2 single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the 3 F 2 + 3 F 3 energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the 3 H 6 ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength

Measurements of ultrafast dynamics in a superconductor, YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}, and a semiconductor, GaSb

Energy Technology Data Exchange (ETDEWEB)

Smith, D.C

1998-07-01

Measurements of ultrafast dynamics in GaSb and YBa{sub 2}Cu{sub 3}O{sub 7-}{delta} (YBCO) have been made with 1 ps or better resolution using time-resolved optical spectroscopy; pump-probe transmission and reflection, and time-resolved Raman spectroscopy. The study of carrier dynamics in GaSb focuses on the scattering of electrons between the F and L conduction band valleys by zone-boundary phonons {gamma}-L scattering in bulk GaSb and a GaSb/AlSb multiple quantum well sample has been investigated in a series of room temperature degenerate pump-probe transmission experiments with near bandgap excitation. There is a clear difference in the dynamics between experiments where electrons excited in {gamma} can/cannot directly scatter to the L valleys. Ensemble Monte Carlo simulations are presented which are in good agreement with the experiments. The strength of {gamma}-L scattering is quantified using an intervalley deformation potential for a single 'effective' zone-boundary phonon (25meV). A deformation potential of 3.6{+-}0.4 eVA{sup -1} is consistent with both the bulk and quantum well results. The temperature dependence of the dynamics in bulk GaSb is also explored. Time-resolved Raman spectroscopy (E{sub laser}{approx}E{sub 0}+{delta}{sub 0}) has been used to study {gamma}-F scattering by measuring the dynamics of phonons emitted during intravalley scattering. All the measured non-equilibrium phonon populations have a component whose lifetime is greater the phonons anharmonic lifetime. This component is interpreted as following the return of electrons from L to {gamma}. Comparison of the results with the pump-probe experiments indicates that this return is slowed by blocking of {gamma} states. The study of YBCO consists of pump-probe transmission and reflection measurements of thin films and single crystals in both the normal and superconducting states. Measurements of dynamics have been made with a wide range of probe energies lower than in any

Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun; Zhang, Q. Y.; Schwingenschlö gl, Udo

2014-01-01

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Directory of Open Access Journals (Sweden)

Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

Single mode dye-doped polymer photonic crystal lasers

DEFF Research Database (Denmark)

Christiansen, Mads Brøkner; Buss, Thomas; Smith, Cameron

2010-01-01

Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode...... emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e. g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be -0.045 or -0...

Catalytic activity of Pd-doped Cu nanoparticles for hydrogenation as a single-atom-alloy catalyst.

Science.gov (United States)

Cao, Xinrui; Fu, Qiang; Luo, Yi

2014-05-14

The single atom alloy of extended surfaces is known to provide remarkably enhanced catalytic performance toward heterogeneous hydrogenation. Here we demonstrate from first principles calculations that this approach can be extended to nanostructures, such as bimetallic nanoparticles. The catalytic properties of the single-Pd-doped Cu55 nanoparticles have been systemically examined for H2 dissociation as well as H atom adsorption and diffusion, following the concept of single atom alloy. It is found that doping a single Pd atom at the edge site of the Cu55 shell can considerably reduce the activation energy of H2 dissociation, while the single Pd atom doped at the top site or in the inner layers is much less effective. The H atom adsorption on Cu55 is slightly stronger than that on the Cu(111) surface; however, a larger nanoparticle that contains 147 atoms could effectively recover the weak binding of the H atoms. We have also investigated the H atom diffusion on the 55-atom nanoparticle and found that spillover of the produced H atoms could be a feasible process due to the low diffusion barriers. Our results have demonstrated that facile H2 dissociation and weak H atom adsorption could be combined at the nanoscale. Moreover, the effects of doping one more Pd atom on the H2 dissociation and H atom adsorption have also been investigated. We have found that both the doping Pd atoms in the most stable configuration could independently exhibit their catalytic activity, behaving as two single-atom-alloy catalysts.

Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

Energy Technology Data Exchange (ETDEWEB)

Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

2017-10-15

This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

Stable Single Polarization, Single Frequency, and Linear Cavity Er-Doped Fiber Laser Using a Saturable Absorber

International Nuclear Information System (INIS)

Li Qi; Yan Feng-Ping; Peng Wan-Jing; Feng Su-Chun; Feng Ting; Tan Si-Yu; Liu Peng

2013-01-01

A simple approach for stable single polarization, single frequency, and linear cavity erbium doped fiber laser is proposed and demonstrated. A Fabry—Pérot filter, polarizer and saturable absorber are used together to ensure stable single frequency, single polarization operation. The optical signal-to-noise ratio of the laser is approximately 57 dB, and the Lorentz linewidth is 13.9 kHz. The polarization state of the laser with good stability is confirmed and the degree of polarization is >99%

A DFT comparative study of single and double SO2 adsorption on Pt-doped and Au-doped single-walled carbon nanotube

International Nuclear Information System (INIS)

Yoosefian, Mehdi; Zahedi, Mansour; Mola, Adeleh; Naserian, Samira

2015-01-01

Highlights: • Investigation of the adsorption of SO 2 on Au/SWCNT and Pt/SWCNT. • SO 2 adsorbed on Au/SWCNT and Pt/SWCNT system demonstrate a strong chemisorption. • NBO analysis was done to reach more understanding about intermolecular interactions. - Abstract: Adsorption of single and double SO 2 gas molecule(s) on the surface of Pt-doped and Au-doped (5,5) single-walled carbon nanotubes (Pt/CNT-V and Au/CNT-V) were investigated by using density functional theory (DFT) at B3LYP/LANL2DZ level. The results showed the following: firstly, adsorption on Au/CNT-V is independent of special orientation, secondly, SO 2 adsorption on Pt/CNT-V in single case is stronger than Au/CNT-V, and finally, adsorption of the first molecule influences adsorption of the second one. Upon adsorption of SO 2 molecule(s), the energy gap of Pt/CNT-V were considerably reduced, resulting in enhanced electrical conductivity but in Au/CNT-V, despite of adsorption energy similar to Pt/CNT-V, E g slightly increased. In order to consider the effect of adsorption on electronic properties, DOS and PDOS calculations were performed. Moreover, NBO analysis was done to reach more understanding about intermolecular interactions. In conclusion, chemical reactivity was investigated in terms of chemical hardness, softness and work function (ϕ)

Single mode dye-doped polymer photonic crystal lasers

International Nuclear Information System (INIS)

Christiansen, Mads B; Buß, Thomas; Smith, Cameron L C; Petersen, Sidsel R; Jørgensen, Mette M; Kristensen, Anders

2010-01-01

Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e.g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be −0.045 or −0.066 nm K -1 , depending on the material

Non-destructive local determination of doping additions and main components in single crystals

International Nuclear Information System (INIS)

Ehksperiandova, L.P.; Blank, A.B.; Kukhtina, N.N.; Afanasiadi, L.I.

1994-01-01

Procedures for local non-destructive determination of elements in optical and scintillation single crystals are developed. They are applied for determination of the main components (in cadmium tungstate) and doping additions (tellurium in zinc selenide, europium in gadolinium silicate). The metrological characteristics of the developed micro-analysis methods are estimated. Segregation of the main components and doping additions in the objects under consideration are investigated. Tellurium is found to be distributed uniformly on the cross-sections of bulk zinc selenide single crystals. The segregation of europium along gadolinium silicate ingots is almost absent. On the cross-section surface of cadmium tungstate single crystals the microregions are found characterized by the prevailing contents of cadmium or tungsten

First-principles study of structural and work function properties for nitrogen-doped single-walled carbon nanotubes

International Nuclear Information System (INIS)

Shao, Xiji; Li, Detian; Cai, Jianqiu; Luo, Haijun; Dong, Changkun

2016-01-01

Graphical abstract: - Highlights: • Substitutional nitrogen atom doping in capped (5, 5) SWNT is investigated. • Serious defects appear from breaks of C−N bonds with N contents of above 23.3 at.%. • Work function drops after N doping and may reach 4.1 eV. - Abstract: The structural and electronic properties of the capped (5, 5) single-walled carbon nanotube (SWNT), including the structural stability, the work function, and the charge transfer performance, are investigated for the substitutional nitrogen atom doping under different concentrations by first-principles density functional theory. The geometrical structure keeps almost intact with single or two N atom doping, while C−N bonds may break up with serious defects for N concentrations of 23.3 at.% and above. The SWNT remains metallic and the work function drops after doping due to the upward shift of Fermi level, leading to the increase of the electrical conductivity. N doping enhances the oxygen reduction activity stronger than N adsorption because of higher charge transfers.

75 FR 33306 - Notice of Meeting Location Change and Joint Meeting of FASAB and GASB

Science.gov (United States)

2010-06-11

... meeting is to discuss: --Measurement Attributes, --Reporting Model, --Cost Accounting, and --Governance... FEDERAL ACCOUNTING STANDARDS ADVISORY BOARD Notice of Meeting Location Change and Joint Meeting of FASAB and GASB AGENCY: Federal Accounting Standards Advisory Board. ACTION: Notice. Board Action...

Structural and magnetic properties of single-crystalline Co-doped barium titanate nanoparticles

International Nuclear Information System (INIS)

Liu Hongxue; Cao Baobao; O'Connor, Charles J.

2010-01-01

Undoped and Co-doped BaTiO 3 nanoparticles were synthesized by a one-step sol-precipitation method. For all the samples, X-ray diffraction showed characteristic diffraction lines for BaTiO 3 without the indication of secondary phases. High-resolution transition electron microscopy images showed that BaTiO 3 nanoparticles exhibit the nature of single-crystal. Magnetometry revealed that all the Co-doped BaTiO 3 samples show paramagnetic behaviors and Co ions in BaTiO 3 are present as isolated paramagnetic centers. This is contrasted to several reported cases of ferromagnetism in Co-doped BaTiO 3 .

Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals

International Nuclear Information System (INIS)

Martovitsky, V. P.

2006-01-01

Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanumdoped Bi2201 single crystals with x = 0.7 and T c = 8-10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q 1 = 0.237b* + 0.277c* and q 2 = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70-to 80-A-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions

Studies on transport properties of copper doped tungsten diselenide single crystals

Science.gov (United States)

Deshpande, M. P.; Parmar, M. N.; Pandya, Nilesh N.; Chaki, Sunil; Bhatt, Sandip V.

2012-02-01

During recent years, transition metal dichalcogenides of groups IVB, VB and VIB have received considerable attention because of the great diversity in their transport properties. 2H-WSe 2 (Tungsten diselenide) is an interesting member of the transition metal dichalcogenide (TMDC's) family and known to be a semiconductor useful for photovoltaic and optoelectronic applications. The anisotropy usually observed in this diamagnetic semiconductor material is a result of the sandwich structure of Se-W-Se layers interacting with each other, loosely bonded by the weak Van der Waals forces. Recent efforts in studying the influence of the anisotropic electrical and optical properties of this layered-type transition metal dichalcogenides have been implemented by doping the samples with different alkali group elements. Unfortunately, little work is reported on doping of metals in WSe 2. Therefore, it is proposed in this work to carry out a systematic growth of single crystals of WSe 2 by doping it with copper in different proportions i.e. Cu xWSe 2 ( x=0, 0.5, 1.0) by direct vapour transport technique. Transport properties like low and high temperature resistivity measurements, high pressure resistivity, Seebeck coefficient measurements at low temperature and Hall Effect at room temperature were studied in detail on all these samples. These measurements show that tungsten diselenide single crystals are p-type whereas doped with copper makes it n-type in nature. The results obtained and their implications are discussed in this paper.

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

Science.gov (United States)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

Superconductivity in Sm-doped CaFe2As2 single crystals

Science.gov (United States)

Dong-Yun, Chen; Bin-Bin, Ruan; Jia, Yu; Qi, Guo; Xiao-Chuan, Wang; Qing-Ge, Mu; Bo-Jin, Pan; Tong, Liu; Gen-Fu, Chen; Zhi-An, Ren

2016-06-01

In this article, the Sm-doping single crystals Ca1 - x Sm x Fe2As2 (x = 0 ˜ 0.2) were prepared by the CaAs flux method, and followed by a rapid quenching treatment after the high temperature growth. The samples were characterized by structural, resistive, and magnetic measurements. The successful Sm-substitution was revealed by the reduction of the lattice parameter c, due to the smaller ionic radius of Sm3+ than Ca2+. Superconductivity was observed in all samples with onset T c varying from 27 K to 44 K upon Sm-doping. The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples. Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10. The doping dependences of the c-axis length and onset T c were summarized. The high-T c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution. Project supported by the National Natural Science Foundation of China (Grant No. 11474339), the National Basic Research Program of China (Grant Nos. 2010CB923000 and 2011CBA00100), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020100).

Silver nanoparticles on GaSb nanodots: a LSPR-boosted binary platform for broadband light harvesting and SERS

Energy Technology Data Exchange (ETDEWEB)

Bhatnagar, Mukul, E-mail: mkbh10@gmail.com; Ranjan, Mukesh; Mukherjee, Subroto [FCIPT, Institute for Plasma Research (India)

2015-02-15

We report the LSPR-augmented optical response of silver nanoparticle-topped GaSb nanodots produced by low-energy ion beam irradiation. Nanostructure ordering and interdot gap play crucial roles for inducing the LSPR effect, enhancing the absorbing capacity of the structure as validated by reflection measurements. The measured size of silver-capped GaSb nanodot varies from 28 to 48 nm. Enhanced plasmon coupling for the 600 eV configuration initiates the presence of giant electromagnetic fields as confirmed by LSPR and SERS measurements. Anisotropic Bruggeman effective medium approximation was performed to match the experimentally observed optical response of the nanostructure. Calculated screening factor values of 0.29 and 0.23 for 600 and 800 eV ion energy produced nanodot configurations were obtained, respectively, which are in tune with the measured reflected and SERS signal. The calculated dielectric constants confirm the directional anisotropy along the length of the silver-capped GaSb nanodots. The proposed model successfully matches the void fraction and nanostructure height in accordance with SEM and reported TEM measurements. Thus, the model developed can be used to optimize the maximum plasmonic coupling efficiency among the dots. We propose two key applications for this nanostructure, first as an absorptive substrate for deep space photovoltaics and second to act as an effective SERS substrate.

Development of porous structures in GaSb by ion irradiation

International Nuclear Information System (INIS)

Jacobi, C.C.; Steinbach, T.; Wesch, W.

2012-01-01

Ion irradiation of GaSb causes not only defect formation but also leads to the formation of a porous structure. To study the behaviour of this structural modification, GaSb was irradiated with 6 MeV Iodine ions and ion fluences from 5 × 10 12 to 6 × 10 15 ions/cm 2 . The samples were investigated by step height measurements and scanning electron microscopy (SEM). Experiments were performed with two different procedures: (CI) Continuous Irradiation of samples followed by measurements of the step height in air and (SI) Stepwise Irradiation of samples with measurements of the step height in air between subsequent irradiations. Samples irradiated continuously, show a linear increase of the step height with increasing ion fluence up to 1.5 × 10 14 ions/cm 2 followed by a steeper, linear increase for higher ion fluences up to a step height of 32 μm. This swelling is induced by a formation of voids, and the two different slopes can be explained by a transformation from isolated voids to a rod like structure. For samples irradiated accordingly to procedure (SI), the step height shows the same behaviour up to an ion fluence of 1.5 × 10 14 ions/cm 2 resulting in a step height of ≈3 μm but then decreases with further irradiation. The latter effect is caused by a compaction of the porous structure.

Zn doped GaN for single-photon emission

Energy Technology Data Exchange (ETDEWEB)

Behrends, Arne; Ledig, Johannes; Al-Suleiman, Mohamed Aid Mansur; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Peters, Silke; Racu, Ana Maria; Schmunk, Waldemar; Hofer, Helmut; Kueck, Stefan [Physikalisch Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

2012-03-15

In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single-photon emission, thus the density of the Zn-Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single-photon sources these Zn-Si pairs have to be incorporated into LEDs, therefore we fabricated GaN-based nano-LEDs which show electroluminescence at 430 nm (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Defect studies of ZnO single crystals electrochemically doped with hydrogen

Science.gov (United States)

Čížek, J.; Žaludová, N.; Vlach, M.; Daniš, S.; Kuriplach, J.; Procházka, I.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Gemma, R.; Kirchheim, R.; Pundt, A.

2008-03-01

Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3at.% H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to ˜30at.%) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

International Nuclear Information System (INIS)

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

2016-01-01

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

International Nuclear Information System (INIS)

Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

2016-01-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

Novel doping alternatives for single-layer transition metal dichalcogenides

Science.gov (United States)

Onofrio, Nicolas; Guzman, David; Strachan, Alejandro

2017-11-01

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Unexpected strong magnetism of Cu doped single-layer MoS₂ and its origin.

Science.gov (United States)

Yun, Won Seok; Lee, J D

2014-05-21

The magnetism of the 3d transition-metal (TM) doped single-layer (1L) MoS2, where the Mo atom is partially replaced by the 3d TM atom, is investigated using the first-principles density functional calculations. In a series of 3d TM doped 1L-MoS2's, the induced spin polarizations are negligible for Sc, Ti, and Cr dopings, while the induced spin polarizations are confirmed for V, Mn, Fe, Co, Ni, Cu, and Zn dopings and the systems become magnetic. Especially, the Cu doped system shows unexpectedly strong magnetism although Cu is nonmagnetic in its bulk state. The driving force is found to be a strong hybridization between Cu 3d states and 3p states of neighboring S, which results in an extreme unbalanced spin-population in the spin-split impurity bands near the Fermi level. Finally, we also discuss further issues of the Cu induced magnetism of 1L-MoS2 such as investigation of additional charge states, the Cu doping at the S site instead of the Mo site, and the Cu adatom on the layer (i.e., 1L-MoS2).

Growth and characterization of Sm3+ doped cerium oxalate single crystals

Directory of Open Access Journals (Sweden)

Minu Mary C

2016-07-01

Full Text Available Single crystals of Sm3+ doped cerium oxalate decahydrate were synthesized using single diffusion gel technique and the conditions influencing the size, morphology, nucleation density and quality of the crystals were optimized. Highly transparent single crystals of average size 3 mm × 2 mm × 1 mm with well-defined hexagonal morphology were grown during a time period of two weeks. X-ray powder diffraction analysis revealed that the grown crystals crystallize in the monoclinic system with space group P21/c as identical with the pure cerium oxalate. The various functional groups of the oxalate ligand and the water of crystallization were identified by Fourier transform infrared spectroscopy. The photoluminescence spectrum of the Sm3+ doped cerium oxalate indicated that the Sm3+ ions are optically active in the cerium oxalate matrix. The crystal has a strong and efficient orange red emission with a wavelength peak at 595 nm and hence can be effectively used for optical amplification. Microhardness measurements of the crystal revealed that they belong to the soft material category.

Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

International Nuclear Information System (INIS)

Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

2011-01-01

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

Origin of the reverse optical-contrast change of Ga-Sb phase-change materials—An ab initio molecular-dynamics study

Energy Technology Data Exchange (ETDEWEB)

Dixon, J. A.; Elliott, S. R., E-mail: sre1@cam.ac.uk [Department of Chemistry, University of Cambridge, Cambridge CB2 1EW (United Kingdom)

2014-04-07

A large number of phase-change materials (PCMs) have been developed experimentally; however, only Ge{sub 2}Sb{sub 2}Te{sub 5}-based PCMs have been significantly explored using ab initio molecular-dynamics (AIMD) simulations. We present an AIMD study of the full melt/quench/anneal PC cycle for Ga-Sb materials, namely, the stoichiometric composition, GaSb, and the near-eutectic alloy, Ga{sub 16}Sb{sub 84}. The calculated electronic densities of states and optical reflectivities are compared between the amorphous and crystalline phases for both compositions, and it is shown that the contrasting opto-electronic properties of each crystalline material can be attributed to different structural transformations of Ga and Sb on crystallization from the amorphous state.

Noise spectroscopy measurement of 2.3μm CW GaSb based laser diodes

Czech Academy of Sciences Publication Activity Database

Chobola, Z.; Juránková, V.; Vaněk, J.; Hulicius, Eduard; Šimeček, Tomislav; Alibert, C.; Rouillard, Y.; Werner, R.

2005-01-01

Roč. 1, - (2005), s. 70-73 ISSN 0033-2089 R&D Projects: GA MŠk(CZ) LC510; GA AV ČR(CZ) KSK1010104 Grant - others:EC Project GLADIS(XE) IST-2001-35178 Institutional research plan: CEZ:AV0Z1010914 Keywords : noise spectroscopy * GaSb * laser diode * 1/f noise Subject RIV: BM - Solid Matter Physics ; Magnetism

Studies on various properties of pure and Li-doped Barium Hydrogen Phosphate (BHP) single crystals

Energy Technology Data Exchange (ETDEWEB)

Nallamuthu, D. [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamil Nadu (India); Selvarajan, P., E-mail: pselvarajanphy@yahoo.co.i [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamil Nadu (India); Freeda, T.H. [Physics Research Centre, S.T. Hindu College, Nagercoil 629002 (India)

2010-12-15

Single crystals of pure and Li-doped barium hydrogen phosphate (BHP) were grown by solution method with gel technique. Various properties of the harvested crystals were studied by carrying out single crystal and powder XRD, FTIR, TG/DTA, microhardness and dielectric studies. Atomic absorption study was carried out for Li-doped BHP crystal to check the presence of Li dopants. Unit cell dimensions and diffracting planes of the grown crystals have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Density of the grown crystals was calculated using the XRD data. Thermal stability of the samples was checked by TG/DTA studies. Mechanical and dielectric characterizations of the harvested pure and Li-doped BHP crystals reveal the mechanical strength and ferroelectric transition. The observed results are reported and discussed.

Electrical conduction studies in ferric-doped KHSO 4 single crystals

Science.gov (United States)

Sharon, M.; Kalia, A. K.

1980-03-01

Direct-current conductivity of ferric-doped (138, 267, and 490 ppm) single crystals of KHSO 4 has been studied. The mechanism for the dc conduction process is discussed. It is observed that the ferric ion forms a (Fe 3+-two vacancies) complex and the enthaply for its formation is 0.09 ± 0.01 eV. It is proposed that each ferric ion removes two protons from each HSO 4 dimer. The conductivity plot shows the presence of intrinsic and extrinsic regions. It is proposed that in the intrinsic region the dimer of HSO -4 breaks reversibly to form a long-chain monomer-type structure. The conductivity in the KHSO 4 crystal is proposed to be controlled by the rotation of HSO -4 tetrahedra along the axis which contains no hydrogen atom. Isotherm calculation for the trivalent-doped system is applied to this crystal and the results are compared with Co 2+-doped KHSO 4 crystal. The distribution coefficient of ferric ion in the KHSO 4 single crystal is calculated to be 4.5 × 10 -1. Ferric ion causes tapering in the crystal growth habit of KHSO 4 and it is believed to be due to the presence of (Fe 3+-two vacancies) complex. The enthalpy values for the various other processes are as follows: enthalpy for the breakage of HSO -4 dimer ( Hi) = 1.28 ± 0.01 eV; enthalpy for the rotation of HSO -4 tetrahedron ( Hm) = 0.58 ± 0.01 eV.

Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

KAUST Repository

Peng, Wei; Yin, Jun; Ho, Kang-Ting; Ouellette, Olivier; de Bastiani, Michele; Banavoth, Murali; El Tall, Omar; Shen, Chao; Miao, Xiaohe; Pan, Jun; Alarousu, Erkki; He, Jr-Hau; Ooi, Boon S.; Mohammed, Omar F.; Sargent, Edward H.; Bakr, Osman

2017-01-01

-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders

GaSb grown from Sn solvent at low temperatures by LPE

Energy Technology Data Exchange (ETDEWEB)

Compean, V H; Anda, F de; Mishurnyi, V A; Gorbatchev, A Yu, E-mail: fdeanda@cactus.iico.uaslp.m [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico)

2009-05-01

The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is shown the Sn incorporates into the grown layers and that it behaves as an acceptor. The photoluminescence spectra of the grown layers with different Sn contents show characteristic peaks that can be attributed to different recombination processes.

First-principle study of single TM atoms X (X=Fe, Ru or Os) doped monolayer WS2 systems

Science.gov (United States)

Zhu, Yuan-Yan; Zhang, Jian-Min

2018-05-01

We report the structural, magnetic and electronic properties of the pristine and single TM atoms X (X = Fe, Ru or Os) doped monolayer WS2 systems based on first-principle calculations. The results show that the W-S bond shows a stronger covalent bond, but the covalency is obviously weakened after the substitution of W atom with single X atoms, especially for Ru (4d75s1) with the easily lost electronic configuration. The smaller total energies of the doped systems reveal that the spin-polarized states are energetically favorable than the non-spin-polarized states, and the smallest total energy of -373.918 eV shows the spin-polarized state of the Os doped monolayer WS2 system is most stable among three doped systems. In addition, although the pristine monolayer WS2 system is a nonmagnetic-semiconductor with a direct band gap of 1.813 eV, single TM atoms Fe and Ru doped monolayer WS2 systems transfer to magnetic-HM with the total moments Mtot of 1.993 and 1.962 μB , while single TM atom Os doped monolayer WS2 systems changes to magnetic-metal with the total moments Mtot of 1.569 μB . Moreover, the impurity states with a positive spin splitting energies of 0.543, 0.276 and 0.1999 eV near the Fermi level EF are mainly contributed by X-dxy and X-dx2-y2 states hybridized with its nearest-neighbor atom W-dz2 states for Fe, Ru and Os doped monolayer WS2 system, respectively. Finally, we hope that the present study on monolayer WS2 will provide a useful theoretical guideline for exploring low-dimensional spintronic materials in future experiments.

Scintillation properties of YAlO3 doped with Lu and Nd perovskite single crystals

Science.gov (United States)

Akatsuka, Masaki; Usui, Yuki; Nakauchi, Daisuke; Kato, Takumi; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-05-01

YAlO3 (YAP) single crystals doped with Lu and Nd were grown by the Floating Zone (FZ) method to evaluate their scintillation properties particularly emissions in the near-infrared (NIR) range. The Nd concentration was fixed to 0 or 1 mol% while the Lu concentration was varied from 0 to 30%. When X-ray was irradiated, the scintillation of Nd-doped samples was observed predominantly at 1064 nm due to 4F3/2 → 4I11/2 transition of Nd3+. In contrast, a weak emission around 700 nm appeared in the samples doped with only Lu, and the emission origin was attributed to defect centers. In the Nd3+-doped samples, the decay time was 94-157 μs due to the 4f-4f transitions of Nd3+ whereas the Lu-doped samples showed signal with the decay time of 1.45-1.54 ms. The emission origin of the latter signal was attributed to the perovskite lattice defect.

Comparative study of transparent ceramic and single crystal Ce doped LuAG scintillators

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Yanagida, Satoko; Yoshikawa, Akira; Yagi, Hideki; Yanagitani, Takagimi

2011-01-01

Transparent ceramic Ce 0.5% doped Lu 3 Al 5 O 12 (LuAG) scintillator grown by the sintering method and single crystalline Ce doped LuAG grown by the Czochralski method are prepared. They are cut to the physical dimensions 4 × 4 × 2 mm 3 . Their transmittance and radio luminescence spectra are evaluated. They are both transmissive in wavelength longer than 500 nm and intense Ce 3+ 5d–4f emission appears around 520 nm. When 137 Cs γ-ray is irradiated, 662 keV photo-absorption peaks are clearly observed in each sample. The transparent ceramic one shows higher light yield than that of the single crystalline one. The absolute light yield of the ceramic sample is turned out to be 14800 ± 1500 ph/MeV. The decay time constants are evaluated under pulse X-ray excitation. The main component of the decay time of ceramic and single crystalline one are determined as 37 and 46 ns, respectively.

Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques.

Science.gov (United States)

Bolker, Asaf; Saguy, Cecile; Kalish, Rafi

2014-09-26

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND's size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques.

Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques

Science.gov (United States)

Bolker, Asaf; Saguy, Cecile; Kalish, Rafi

2014-09-01

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND’s size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques.

Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques

International Nuclear Information System (INIS)

Bolker, Asaf; Kalish, Rafi; Saguy, Cecile

2014-01-01

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND’s size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques. (paper)

TL and OSL studies on lithium borate single crystals doped with Cu and Ag

International Nuclear Information System (INIS)

Rawat, N.S.; Kulkarni, M.S.; Tyagi, M.; Ratna, P.; Mishra, D.R.; Singh, S.G.; Tiwari, B.; Soni, A.; Gadkari, S.C.; Gupta, S.K.

2012-01-01

Lithium borate (LBO) single crystals doped with Cu and Ag (0.25 mol% each) (Li 2 B 4 O 7 :Cu,Ag) are grown by the Czochralski method. The thermoluminescence readout on Li 2 B 4 O 7 :Cu,Ag crystals showed three glow peaks at∼375, 441 and 516 K for the heating rate of 1 K/s. The thermoluminescence sensitivity of the grown Li 2 B 4 O 7 :Cu,Ag single crystals is found to be 5 times TLD-100 and a linear dose response in the range 1 mGy to 1 kGy. The glow curve deconvolution reveals nearly first order kinetics for all the three peaks with trap depths 0.77, 1.25 and 1.34 eV respectively and corresponding frequency factors 1.6×10 9 , 1.3×10 13 and 6.8×10 11 s −1 . The continuous wave optically stimulated luminescence (CW-OSL) measurements were performed on the LBO:Cu,Ag single crystals using blue light stimulation. The traps responsible for the three thermoluminescence peaks in Li 2 B 4 O 7 :Cu,Ag are found to be OSL sensitive. The qualitative correlation between TL peaks and CW-OSL response is established. The photoluminescence studies show that in case of co-doping of Ag in LBO:Cu the emission at 370 nm in Cu states dominates over the transitions in Ag states implying doping of Ag plays a role as sensitizer when co-doped with Cu and increases overall emission. - Highlights: ► Growth of crack free single crystals of Li2B4O7 :Cu and Ag. ► Study of TL and OSL parameters for Li2B4O7 :Cu and Ag. ► Correlation of OSL with TL peaks. ► Optimization of OSL readout time with respect to residual TL.

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

International Nuclear Information System (INIS)

Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S.M.

2009-01-01

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T c =51 deg. C (for pure TGS, T c =48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Science.gov (United States)

Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S. M.

2009-11-01

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 °C/min. An increase in the Curie temperature Tc=51 °C (for pure TGS, Tc=48.5 °C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Growth morphology and structure of bismuth thin films on GaSb(110)

DEFF Research Database (Denmark)

Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

1998-01-01

Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstructio...... that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V. All rights reserved....

Universal doping evolution of the superconducting gap anisotropy in single crystals of electron-doped Ba(Fe1‑x Rh x )2As2 from London penetration depth measurements

Science.gov (United States)

Kim, Hyunsoo; Tanatar, M. A.; Martin, C.; Blomberg, E. C.; Ni, Ni; Bud’ko, S. L.; Canfield, P. C.; Prozorov, R.

2018-06-01

Doping evolution of the superconducting gap anisotropy was studied in single crystals of 4d-electron doped Ba(Fe1‑x Rh x )2As2 using tunnel diode resonator measurements of the temperature variation of the London penetration depth . Single crystals with doping levels representative of an underdoped regime x  =  0.039 ( K), close to optimal doping x  =  0.057 ( K) and overdoped x  =  0.079 ( K) and x  =  0.131( K) were studied. Superconducting energy gap anisotropy was characterized by the exponent, n, by fitting the data to the power-law, . The exponent n varies non-monotonically with x, increasing to a maximum n  =  2.5 for x  =  0.079 and rapidly decreasing towards overdoped compositions to 1.6 for x  =  0.131. This behavior is qualitatively similar to the doping evolution of the superconducting gap anisotropy in other iron pnictides, including hole-doped (Ba,K)Fe2As2 and 3d-electron-doped Ba(Fe,Co)2As2 superconductors, finding a full gap near optimal doping and strong anisotropy toward the ends of the superconducting dome in the T-x phase diagram. The normalized superfluid density in an optimally Rh-doped sample is almost identical to the temperature-dependence in the optimally doped Ba(Fe,Co)2As2 samples. Our study supports the universal superconducting gap variation with doping and pairing at least in iron based superconductors of the BaFe2As2 family.

Scintillation and optical properties of Sn-doped Ga2O3 single crystals

Science.gov (United States)

Usui, Yuki; Nakauchi, Daisuke; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-06-01

Sn-doped Ga2O3 single crystals were synthesized by the Floating Zone (FZ) method. In photoluminescence (PL) under the excitation wavelength of 280 nm, we observed two types of luminescence: (1) defect luminescence due to recombination of the donor/acceptor pairs which appears at 430 nm and (2) the nsnp-ns2 transitions of Sn2+ which appear at 530 nm. The PL and scintillation decay time curves of the Sn-doped samples were approximated by a sum of exponential decay functions. The faster two components were ascribed to the defect luminescence, and the slowest component was owing to the nsnp-ns2 transitions. In the pulse height spectrum measurements under 241Am α-rays irradiation, all the Sn-doped Ga2O3 samples were confirmed to show a full energy absorption peak but the undoped one. Among the present samples, the 1% Sn-doped sample exhibited the highest scintillation light yield (1,500 ± 150 ph/5.5 MeV-α).

Raman spectroscopy study of the doping effect of the encapsulated terbium halogenides on single-walled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Kharlamova, M.V.; Kramberger, C.; Mittelberger, A. [University of Vienna, Faculty of Physics, Vienna (Austria)

2017-04-15

In the present work, the doping effect of terbium chloride, terbium bromide, and terbium iodide on single-walled carbon nanotubes (SWCNTs) was compared by Raman spectroscopy. A precise investigation of the doping-induced alterations of the Raman modes of the filled SWCNTs was conducted. The shifts of the components of the Raman modes and modification of their profiles allowed concluding that the inserted terbium halogenides have acceptor doping effect on the SWCNTs, and the doping efficiency increases in the line with terbium iodide, terbium bromide, and terbium chloride. (orig.)

Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

International Nuclear Information System (INIS)

Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

2010-01-01

The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

Growth and characterization of air annealing Mn-doped YAG:Ce single crystal for LED

International Nuclear Information System (INIS)

Xiang, Weidong; Zhong, Jiasong; Zhao, Yinsheng; Zhao, Binyu; Liang, Xiaojuan; Dong, Yongjun; Zhang, Zhimin; Chen, Zhaoping; Liu, Bingfeng

2012-01-01

Highlights: ► The YAG:Ce,Mn single crystal was well synthesized by the Czochralski (CZ) method. ► The emission intensity of the sample has been influenced after annealing. ► Annealed in the air at 1200 °C was the most optimal annealing condition. ► The single crystal could be used in the white light LED which emitted by blue light. - Abstract: The growth of Mn-doped YAG:Ce (yttrium aluminum garnet doped cerium) single crystal by the Czochralski (CZ) method and the characterization of its spectroscopy and color-electric parameters are presented. The absorption spectra indicate that the crystal absorbed highly in the 300–500 nm wavelength range. The emission spectrum of the crystal consists of a peak around 538 nm when excited by 460 nm blue light, which prove the YAG:Ce,Mn single crystal could be used in the white light emitting doides (LED). The different charges of Mn ions have different luminescence properties, and the air annealing process for the single crystal would change the concentration of Mn ions with different charges, which could influence the emission intensity of the single crystal.

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.

2013-10-02

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

Effect of tellurium on viscosity and liquid structure of GaSb melts

Energy Technology Data Exchange (ETDEWEB)

Ji Leilei [School of Material Science and Engineering, Jinan University, Jinan 250022 (China); Geng Haoran [School of Material Science and Engineering, Jinan University, Jinan 250022 (China)], E-mail: mse_genghr@ujn.edu.cn; Sun Chunjing [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Teng Xinying; Liu Yamei [School of Material Science and Engineering, Jinan University, Jinan 250022 (China)

2008-04-03

The behavior of GaSb melt with tellurium addition was investigated using viscometer and differential scanning calorimetry (DSC). Normally, the viscosity of all melts measured decreased with the increasing temperature. However, anomalous transition points were observed in the temperature dependence of viscosity for Ga-Sb-Te system. Corresponded with the abnormal points on the viscosity-temperature curves, there were thermal effect peaks on the DSC curves. Furthermore, viscous activation energy and flow units of these melts and their structural features were discussed in this paper.

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Energy Technology Data Exchange (ETDEWEB)

Rai, Chitharanjan, E-mail: raichitharanjan@gmail.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India); Kalpataru First Grade Science College, Tiptur 572 202 (India); Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dharmaprakash, S.M., E-mail: smdharma@yahoo.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India)

2009-11-15

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T{sub c}=51 deg. C (for pure TGS, T{sub c}=48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Science.gov (United States)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

International Nuclear Information System (INIS)

Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.; Jayavel, R.

2008-01-01

Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresis measurements reveal an increase of coercive field due to the formation of single domain pattern

Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

KAUST Repository

Peng, Wei

2017-06-28

Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites—by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 photoconductors due to the reduced electronic noise, which makes them particularly attractive for the detection of weak light signals. Furthermore, the low self-doping concentration reduces the equilibrium charge carrier concentration in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1, advantageous in the design of p-i-n heterojunction solar cells by optimizing band alignment and promoting carrier depletion in the intrinsic perovskite layer, thereby enhancing charge extraction.

Optical properties of tungsten disulfide single crystals doped with gold

International Nuclear Information System (INIS)

Dumcenco, D.O.; Hsu, H.P.; Huang, Y.S.; Liang, C.H.; Tiong, K.K.; Du, C.H.

2008-01-01

Single crystals of WS 2 doped with gold have been grown by the chemical vapour transport method using iodine as a transporting agent. X-ray diffraction (XRD) pattern analysis revealed presence of mixed three-layer rhombohedral (3R) and two-layer hexagonal (2H) polytypes for the doped crystals while the undoped one shows only 2H form. Hall measurements indicate that the samples are p-type in nature. The doping effects of the materials are characterized by surface photovoltage (SPV), photoconductivity (PC) and piezoreflectance (PzR) measurements. Room temperature SPV and PC spectra reveal a feature located at ∼60 meV below the A exciton and has been tentatively assigned to be an impurity level caused by Au dopant. Excitonic transition energies of the A, B, d and C excitons detected in PzR spectra show red shift due to the presence of a small amount of Au and the broadening parameters of the excitonic transition features increase due to impurity scattering. The values of the parameters that describe the electron (exciton)-phonon interaction of excitonic transitions of A-B are about two times larger than that of d-C excitonic pairs. The possible assignments of the different origins of A-B and d-C excitonic pairs have been discussed

Promoting mechanism of N-doped single-walled carbon nanotubes for O2 dissociation and SO2 oxidation

Science.gov (United States)

Chen, Yanqiu; Yin, Shi; Chen, Yang; Cen, Wanglai; Li, Jianjun; Yin, Huaqiang

2018-03-01

Although heteroatom doping in carbon based catalysts have recently received intensive attentions, the role of the intrinsically porous structure of practical carbon materials and their potential synergy with doping atoms are still unclear. To investigate the complex effects, a range of N-doped single-walled carbon nanotubes (SWCNTs) were used to investigate their potential use for O2 dissociation and the subsequent SO2 oxidation using density functional theory. It is found that graphite N doping can synergize with the outer surface of SWCNTs to facilitate the dissociation of O2. The barrier for the dissociation on dual graphite N-doped SWCNT-(8, 8) is as low as 0.3 eV, and the subsequent SO2 oxidation is thermodynamically favorable and kinetically feasible. These results spotlight on developing promising carboncatalyst via utilization of porous gemometry and heteroatom-doping of carbon materials simultaneously.

Space growth studies of Ce-doped Bi12SiO20 single crystal

International Nuclear Information System (INIS)

Zhou, Y.F.; Wang, J.C.; Tang, L.A.; Pan, Z.L.; Chen, N.F.; Chen, W.C.; Huang, Y.Y.; He, W.

2004-01-01

Ce-doped Bi 12 SiO 20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one

Antimicrobial activity and second harmonic studies on organic non-centrosymmetric pure and doped ninhydrin single crystals

Science.gov (United States)

Prasanyaa, T.; Jayaramakrishnan, V.; Haris, M.

2013-03-01

In this paper, we report the successful growth of pure, Cu2+ ions and Cd2+ ions doped on ninhydrin single crystals by slow solvent evaporation technique. The presence of Cu2+ and Cd2+ ions in the specimen of ninhydrin single crystal has been determined by atomic absorption spectroscopy. The powder X-ray diffraction analysis was done to calculate the lattice parameters of the pure and doped crystals. The percentage of transmittance of the crystal was recorded using the UV-Vis Spectrophotometer. Thermal behaviors of the grown crystals have been examined by the thermal gravimetric/differential thermal analysis. The hardness of the grown crystals was assessed and the results show the minor variation in the hardness value for the pure and doped ninhydrin samples. The value of the work hardening coefficient n was found to be 2.0, 1.0 and 1.06 for pure, copper and cadmium doped ninhydrin crystals respectively. The second harmonic generation efficiency of Cd2+ and Cu2+ doped ninhydrin is 8.3 and 6.3 times greater than well known nonlinear crystal of potassium dihydrogen phosphate respectively. The antibacterial and antifungal activities of the title compound were performed by disk diffusion method against the standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillis niger and Aspergillus flavus.

Single-mode regime in large-mode-area rare-earth-doped rod-type PCFs

DEFF Research Database (Denmark)

Poli, F.; Cucinotta, A.; Passaro, D.

2009-01-01

In this paper, large-mode-area, double-cladding, rare-earth-doped photonic crystal fibers are investigated in order to understand how the refractive index distribution and the mode competition given by the amplification can assure single-mode propagation. Fibers with different core diameters, i...

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation.

Science.gov (United States)

Chen, Chang; Zhang, Jinhu; Dong, Guofeng; Shao, Hezhu; Ning, Bo-Yuan; Zhao, Li; Ning, Xi-Jing; Zhuang, Jun

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method.

Highly optimized tunable Er3+-doped single longitudinal mode fiber ring laser, experiment and model

DEFF Research Database (Denmark)

Poulsen, Christian; Sejka, Milan

1993-01-01

A continuous wave (CW) tunable diode-pumped Er3+-doped fiber ring laser, pumped by diode laser at wavelengths around 1480 nm, is discussed. Wavelength tuning range of 42 nm, maximum slope efficiency of 48% and output power of 14.4 mW have been achieved. Single longitudinal mode lasing...... with a linewidth of 6 kHz has been measured. A fast model of erbium-doped fiber laser was developed and used to optimize output parameters of the laser...

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

Energy Technology Data Exchange (ETDEWEB)

Podkopaev, O. I. [Joint-Stock Company “Germanium” (Russian Federation); Shimanskiy, A. F., E-mail: shimanaf@mail.ru [Siberian Federal University (Russian Federation); Kopytkova, S. A.; Filatov, R. A. [Joint-Stock Company “Germanium” (Russian Federation); Golubovskaya, N. O. [Siberian Federal University (Russian Federation)

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

International Nuclear Information System (INIS)

Podkopaev, O. I.; Shimanskiy, A. F.; Kopytkova, S. A.; Filatov, R. A.; Golubovskaya, N. O.

2016-01-01

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

International Nuclear Information System (INIS)

El-Atwani, Osman; Huynh, Chuong; Norris, Scott

2016-01-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

Energy Technology Data Exchange (ETDEWEB)

El-Atwani, Osman, E-mail: oelatwan25@gmail.com [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Huynh, Chuong [Carl Zeiss Microscopy, LLC, One Corporation Way, Peabody, MA 01960 (United States); Norris, Scott [Department of Mathematics, Southern Methodist University, Dallas, TX 75275 (United States)

2016-05-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Evolution of porous network in GaSb under normally incident 60 keV Ar{sup +}-ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Datta, D.P. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Gautam Budh Nagar 203 207, Uttar Pradesh (India); Garg, S.K. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Sahoo, P.K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751 005, Odisha (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kanjilal, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India)

2014-08-15

Highlights: • We show the evolution of a nanoporous layer in GaSb under Ar{sup +}-ion bombardment at normal incidence in the hitherto unexplored high fluence regime, namely 7 × 10{sup 16}–3 × 10{sup 18} ions cm{sup −2}. • Fluence dependent formation and growth of patches on top of the nanoporous layer is demonstrated by scanning electron microscopy. • We also show high amount of oxidation of such ion-beam-generated nanoporous structures, with formation of Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3}. • Our study reveals the presence of nanocrystallites within the porous layer even at the highest fluence used in the experiment. • We interpret the experimental observations through a qualitative model where we take into account the effect of re-deposition of atoms sputtered from the nanoporous layer during Ar{sup +}-ion irradiation of GaSb. - Abstract: GaSb(1 0 0) samples were irradiated with 60 keV Ar{sup +}-ions at normal incidence for fluences in the range of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer.

Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications

International Nuclear Information System (INIS)

Gomez-Herrera, M.L.; Herrera-Perez, J.L.; Rodriguez-Fragoso, P.; Riech, I.; Mendoza-Alvarez, J.G.

2008-01-01

In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases

Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

International Nuclear Information System (INIS)

LaTulipe, D.C.; Frank, D.J.; Munekata, H.

1991-01-01

Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

N-type doping effect of single-walled carbon nanotubes with aromatic amines

Energy Technology Data Exchange (ETDEWEB)

Koizhaiganova, Raushan B.; Hwang, Doo Hee; Lee, Cheol Jin; Dettlaff-Weglikowska, Urszula [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Roth, Siegmar [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Sineurop Nanotech GmbH, Nobelstreet15, 70569 Stuttgart (Germany)

2010-12-15

We investigated the chemical doping of the single-walled carbon nanotubes (SWCNTs) networks by a treatment with aromatic amines. Adsorption and intercalation of amine molecules in bundled SWCNTs leads to typical n-type doping observed already for alkali metals. The electron donation to SWCNTs is demonstrated by the X-ray-induced photoelectron spectra (XPS), where the carbon C 1s peak observed at 284.4 eV for the sp{sup 2} carbon in pristine samples is shifted by up to 0.3 eV to higher binding energy upon chemical treatment. The development of a Breit-Wigner-Fano component on the lower energy side of the G{sup -} mode in the Raman spectrum as well as a shift of the G{sup +} to lower frequency provide evidence for charge accumulation in the nanotube {pi} system, and indication for the n-type doping. The spectroscopic changes are accompanied by the modification of the electrical properties of the SWCNTs. A reduction of conductivity depends on the doping level and implies the decreasing concentration of the charge carriers in the naturally p-doped tubes. Comparing the two selected n-type dopants, the tetramethyl-p-phenylenediamine, shows more pronounced changes in the XPS and the Raman spectra than tetramethylpyrazine, indicating that the sp{sup 3} hybridization of nitrogen in the amine groups attached to phenyl ring is much more effective in interaction with the tube {pi} system than the sp{sup 2} hybridization of nitrogen in the aromatic pyrazine ring. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

Science.gov (United States)

Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2013-02-01

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

Coloration dependence in the thermoluminescence properties of the double doped NaCl single crystals under gamma irradiation

International Nuclear Information System (INIS)

Sanchez-Mejorada, G.; Gelover-Santiago, A.L.; Frias, D.

2006-01-01

In this work the behaviour of calcium manganese doped NaCl single crystals under gamma irradiation is reported. Various single crystals of NaCl doped with Ca and Mn have been irradiated at different doses with ionising radiation. The production of defects has been correlated to the increase in the intensity of the thermo luminescent glow curve as a function of doses. The glow curves intensity as a function of doses shows the potential use of these materials as dosimeters. Optical properties of such crystals after irradiation with gamma rays have also been studied; results have shown their potentiality as a good detector and optical store memory devices. Since the creations of colour centres by photons with energy less than the band gap energy has been detected also in ns 2 -ion doped alkali halides. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

2013-01-01

0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

First principles studies of the electronic properties and catalytic activity of single-walled carbon nanotube doped with Pt clusters and chains

International Nuclear Information System (INIS)

Hayes, Kayla E.; Lee, Hee-Seung

2012-01-01

Highlights: ► Electronic and magnetic properties of (5, 5)-SWNT doped with Pt clusters and chains. ► Pt-doping can change metallic (5, 5)-SWNT to semiconducting CNT. ► Oxygen adsorption on Pt-doped (5, 5)-SWNT is barrierless process. ► Pt-doping reduces the activation barrier of oxygen dissociation reaction. ► Adsorbed oxygen has 2 O 2 - – character. - Abstract: We report the results of density functional theory calculations on the electronic structures, geometrical parameters, and magnetic properties of a wide variety of Pt clusters/chains adsorbed on metallic (5,5) single-walled carbon nanotube (SWNT). It was found that the electronic band structures of Pt/CNT systems are very sensitive to the small changes in the geometries of Pt clusters and chains. In some cases, metallic (5, 5)-SWNT becomes a small-gap semiconducting nanotube with adsorbed Pt clusters and chains. We also investigated the dissociation of molecular oxygen on the (5, 5)-SWNT doped with a single Pt atom via the nudged elastic band (NEB) method. The NEB results showed that the activation barrier is lowered even with a single Pt atom compared to that of pristine SWNT. It was found that the electronic structure of molecular oxygen adsorbed on Pt-doped CNT resembles that of 2 O 2 - , which should facilitate the dissociation process.

Scintillation and optical properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals

Energy Technology Data Exchange (ETDEWEB)

Mori, Masaki, E-mail: masaki.mori.mz4@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Nakauchi, Daisuke; Okada, Go [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Fujimoto, Yutaka [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Kawaguchi, Noriaki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Koshimizu, Masanori [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Yanagida, Takayuki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan)

2017-06-15

The single crystals of 0, 0.6, 1, 1.6 and 2 mol% Ce doped CaGdAl{sub 3}O{sub 7} (Ce:CGAM) were grown by the Floating Zone method, and investigated on photoluminescence (PL) and scintillation properties. In the PL spectra, a broad emission appeared over 380–500 nm under 280 and 360 nm excitations with the quantum yield of 33.8–38.8%. Under a vacuum ultraviolet excitation (90 nm) using a synchrotron source, non-doped CGAM single crystal showed broad emissions over 250–650 nm. The PL decay time profiles followed a monotonic exponential decay with a decay time constant of around 33 ns. The scintillation spectra were similar to those of PL. All of the samples exhibited a clear photoabsorption peak and Compton edge in the pulse height spectra measured under {sup 137}Cs γ-ray irradiation, and the absolute scintillation light yield (LY) was highest for the 2% Ce-doped sample with the value of 3300±300 ph/MeV. The scintillation decay profiles were approximated by a third order exponential decay function, and the extracted decay time of Ce{sup 3+} emission component was around 36–44 ns. Among all the samples, 2%Ce:CGAM single crystal sample showed the best afterglow level as a scintillator under X-ray irradiation. - Highlights: •Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals were synthesized by the FZ method. •Optical and scintillation properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} were investigated. •Photoabsorption peak in a pulse height spectrum was clearly observed under γ-rays.

Type II GaSb quantum ring solar cells under concentrated sunlight.

Science.gov (United States)

Tsai, Che-Pin; Hsu, Shun-Chieh; Lin, Shih-Yen; Chang, Ching-Wen; Tu, Li-Wei; Chen, Kun-Cheng; Lay, Tsong-Sheng; Lin, Chien-Chung

2014-03-10

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

Ab initio investigation of Al- and Ga-doped single-walled boron nitride nanotubes as ammonia sensor

International Nuclear Information System (INIS)

Soltani, Alireza; Raz, Shima Ghafouri; Rezaei, Vahid Joveini; Dehno Khalaji, Aliakbar; Savar, Mohammad

2012-01-01

Highlights: ► The electronic properties of NH 3 on Al- and Ga-doped (8, 0) and (5, 5) BNNT are studied. ► The adsorption energy for NH 3 on Al-doped (8, 0) BNNT is higher than that of Ga-doped (8, 0) BNNT. ► The relation between adsorption energy and charge transfer was investigated. - Abstract: We performed first-principles calculations on the ammonia (NH 3 ) adsorption properties with zigzag and armchair single-walled BN nanotubes (SWBNNTs) using B3LYP/6-31G* basis set implemented in Gaussian 98 program. We considered the ammonia adsorption on structural and electronic properties of Al- and Ga-doped (8, 0), (5, 5) BNNTs. The adsorption energy for the most stable configuration of NH 3 on Al-doped (8, 0) BNNT is about −0.182 eV, which is typical for the chemisorptions. We determined that both aluminum and gallium doping can significantly enhance the adsorption energy of NH 3 /BNNTs complexes. Our electronic results reveal that there is a significant orbital hybridization between two species in adsorption process being an evidence of covalent interaction.

Structural and electronic properties of a single C chain doped zigzag BN nanoribbons

International Nuclear Information System (INIS)

Wu, Ping; Wang, Qianwen; Cao, Gengyu; Tang, Fuling; Huang, Min

2014-01-01

The effects of single C-chain on the stability, structural and electronic properties of zigzag BN nanoribbons (ZBNNRs) were investigated by first-principles calculations. C-chain was expected to dope at B-edge for all the ribbon widths N z considered. The band gaps of C-chain doped N z -ZBNNR are narrower than that of perfect ZBNNR due to new localized states induced by C-chain. The band gaps of N z -ZBNNR-C(n) are direct except for the case of C-chain position n=2. Band gaps of BN nanoribbons are tunable by C-chain and its position n, which may endow the potential applications of BNNR in electronics.

Oxygen vacancies effect on ionic conductivity and relaxation phenomenon in undoped and Mn doped PZN-4.5PT single crystals

International Nuclear Information System (INIS)

Kobor, Diouma; Guiffard, Benoit; Lebrun, Laurent; Hajjaji, Abdelowahed; Guyomar, Daniel

2007-01-01

AC-impedance spectroscopic studies in the temperature range 550-700 deg. C are carried out on undoped and Mn doped PZN-PT single crystals grown by the flux method. The variation of dielectric permittivity with temperature at different frequencies shows normal ferroelectric and relaxor-like dependence for the doped and undoped crystals, respectively. Temperature-dependent spectroscopic modulus plots reveal a much broader peak for PZN-4.5PT + 1%Mn compared with that for PZN-4.5PT, which is different from the dielectric behaviour of the doped one. Complex modulus imaginary part (Z-prime) versus real part (Z') plots fit well with one semicircle thus indicating only bulk contribution. The relaxation observed in the spectroscopic plots was assigned to mobile relaxor species such as oxygen vacancies and ions. No such relaxation could be observed for PZN-4.5PT + 1%Mn in the dielectric measurements. For both undoped and Mn doped crystals, the conduction behaviour was modelled by the universal dynamic response equation and by the NTC (negative temperature coefficient) materials resistance-temperature behaviour. A large difference in behaviour was found between the two single crystals such as the thermistor coefficients and the activation energy values, which could explain the increase in the thermal stability observed in the Mn doped PZN-PT single crystals by many studies

Optical Properties of a Single Carbon Chain-Doped Silicene Nanoribbon

Science.gov (United States)

Lu, Dao-Bang; Song, Yu-Ling; Huang, Xiao-yu; Wang, Chong

2018-05-01

Using first-principles spin polarization density function theory calculations, we have studied the electronic and optical properties of zigzag-edge silicene nanoribbons (ZSiNRs) doped with a single carbon chain. Because of the doped carbon chain, there are several defect states in the band structures of ZSiNRs across the Fermi level, and the ferromagnetic ground state is metallic. The dielectric functions in all three dimensions are completely different from each other, and thus the system exhibits strong optical anisotropism. The carbon chain influenced the dielectric functions most at low energy. The first peak in the E//x direction of the dielectric spectrum exhibits a significant blueshift, and its value has changed as well. The main absorption wavelength depends on the polarization direction of the incident light, but occurs within the UV region for all polarization directions. The peaks of the energy loss spectra correspond to the trailing edges in the reflectivity spectrum, and the highest peak corresponds to a plasmon frequency. Our results could be useful for investigating nanodevices based on silicene nanoribbons.

Comparative study of neutron irradiation and carbon doping in MgB2 single crystals

International Nuclear Information System (INIS)

Krutzler, C.; Zehetmayer, M.; Eisterer, M.; Weber, H. W.; Zhigadlo, N. D.; Karpinski, J.

2007-01-01

We compare the reversible and irreversible magnetic properties of superconducting carbon doped and undoped MgB 2 single crystals before and after neutron irradiation. A large number of samples with transition temperatures between 38.3 and 22.8 K allows us to study the effects of disorder systematically. Striking similarities are found in the modification of the reversible parameters by irradiation and doping, which are discussed in terms of impurity scattering and changes of the Fermi surface. The irreversible properties are influenced by two counteracting mechanisms: they are enhanced by the newly introduced pinning centers but degraded by changes in the thermodynamic properties. Accordingly, the large neutron induced defects and the small defects from carbon doping lead to significantly different effects on the irreversible properties. Finally, the fishtail effect caused by all kinds of disorder is discussed in terms of an order-disorder transition of the flux-line lattice

Hydrogen adsorption in microporous alkali-doped carbons (single-wall carbon nano-tubes and activated carbons)

International Nuclear Information System (INIS)

Laurent Duclaux; Szymon Los; Michel Letellier; Philippe Azais; Roland Pellenq; Thomas Roussel; Xavier Fuhr

2006-01-01

Doping of microporous carbon by Li or K leads to an increase in the energy of adsorption of H 2 or D 2 molecules. Thus, the room temperature sorption capacities (at P≤3 MPa) can be higher than the ones of the raw materials after slight doping. However, the maximum H 2 (or D 2 ) storage uptake measured at T≤ 77 K is lower than the one of pristine materials as the sites of adsorption are occupied by alkali ions inserted in the micropores. The microporous adsorption sites of doped single-walled carbon nano-tubes, identified by neutron diffraction, are both the interstitial voids (in electric-arc or HiPCO tubes) in between the tubes and the central canals of the tubes (only in HiPCO tubes). (authors)

Luminescence of single crystals of manganese doped zinc indium binary sulfides

International Nuclear Information System (INIS)

Arama, Efim; Vovc, Victor; Gheorghita, Eugene Iv.; Pintea, Valentina

2013-01-01

Radiative recombination spectra of Mn-doped ZnIn 2 S 4 single crystals have been analyzed in the work. The emission spectra interval close to its maximum (1,91±0,2) eV contains a number of the special features which were identified by us as intra-center transitions. We attribute the special features observed on the complex emission spectra to this type of transition by their decomposition into simple lines, using Alentsev -Foch method. (authors)

DFT investigation of NH_3, PH_3, and AsH_3 adsorptions on Sc-, Ti-, V-, and Cr-doped single-walled carbon nanotubes

International Nuclear Information System (INIS)

Buasaeng, Prayut; Rakrai, Wandee; Wanno, Banchob; Tabtimsai, Chanukorn

2017-01-01

Highlights: • Transition metal-doped single wall carbon nanotubes and their adsorption with NH_3, PH_3 and AsH_3 molecules were investigated using a DFT method. • Adsorptions of NH_3, PH_3 and AsH_3 molecules on pristine single wall carbon nanotubeswere improved by transition metal doping. • Structural and electronic properties of single wall carbon nanotubes were significantly changed by transition metal doping and gas adsorptions. - Abstract: The adsorption properties of ammonia (NH_3), phosphine (PH_3), and arsine (AsH_3) on pristine and transition metal- (TM = Sc, Ti, V, and Cr) doped (5,5) armchair single-walled carbon nanotubes (SWCNTs) were theoretically investigated. The geometric and electronic properties and adsorption abilities for the most stable configuration of NH_3, PH_3, and AsH_3 adsorptions on pristine and TM-doped SWCNTs were calculated. It was found that the binding abilities of TMs to the SWCNT were in the order: Cr > V > Sc > Ti. However, the adsorption energy showed that the pristine SWCNT weakly adsorbed gas molecules and its electronic properties were also insensitive to gas molecules. By replacing a C atom with TM atoms, all doping can significantly enhance the adsorption energy of gas/SWCNT complexes and their adsorption ability was in the same order: NH_3 > PH_3 > AsH_3. A remarkable increase in adsorption energy and charge transfer of these systems was expected to induce significant changes in the electrical conductivity of the TM-doped SWCNTs. This work revealed that the sensitivity of SWCNT-based chemical gas adsorptions and sensors can be greatly improved by introducing an appropriate TM dopant. Accordingly, TM-doped SWCNTs are more suitable for gas molecule adsorptions and detections than the pristine SWCNT.

Formation Mechanism of Self Assembled Horizontal ErSb Nanowires Embedded in a GaSb(001) Matrix

Science.gov (United States)

Wilson, Nathaniel; Kraemer, Stephan; PalmstrøM, Chris

The ErxGa1-xSb exhibits a variety of self-assembling nanostructures. In order to harness these nanostructures for use in devices and other material systems it is important to understand their formation. We have characterized the growth mechanism of self-assembled horizontal ErSb nanowires in a GaSb(001) matrix through the use of in-situ Scanning Tunneling Microscopy (STM) as well as ex-situ Transmission Electron Microscopy (TEM). We observe large GaSb macrosteps on the growth surface of Er.3Ga.7Sb samples. The areas near the ledge and base of the macrosteps show significant differences in size and distribution of ErSb nanowires. Results suggest that the formation of macrosteps drives the transition from vertical to horizontal nanowires in the ErxGa1-xSb system. We also observe a low temperature growth mode, which results in horizontal nanowire formation under a wide range of flux conditions. This new growth mode does not exhibit the embedded growth observed in the formation of nanowires at higher temperatures and may allow for horizontal nanowire formation without the presence of macrosteps, as well as the formation of smaller nanoparticles which may be useful for achieving smaller nanoparticle dimensions and electron confinement effects. This work was supported by NSF-DMR under 1507875.

Growth of rare-earth doped single crystal yttrium aluminum garnet fibers

Science.gov (United States)

Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.

2018-02-01

Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.

Radioisotope thermal photovoltaic application of the GaSb solar cell

Science.gov (United States)

Morgan, M. D.; Horne, W. E.; Day, A. C.

1991-01-01

An examination of a RTVP (radioisotopic thermophotovoltaic) conceptual design has shown a high potential for power densities well above those achievable with radioisotopic thermoelectric generator (RTG) systems. An efficiency of 14.4 percent and system specific power of 9.25 watts/kg were predicted for a system with sixteen GPHS (general purpose heat source) sources operating at 1100 C. The models also showed a 500 watt system power by the strontium-90 isotope at 1200 C at an efficiency of 17.0 percent and a system specific power of 11.8 watts/kg. The key to this level of performance is a high-quality photovoltaic cell with narrow bandgap and a reflective rear contact. Recent work at Boeing on GaSb cells and transparent back GaAs cells indicate that such a cell is well within reach.

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

Science.gov (United States)

Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

2018-04-01

InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

Wavelength-selectable and steady single-mode erbium-doped fiber multiple ring laser

Science.gov (United States)

Yeh, Chien-Hung; Yang, Zi-Qing; Huang, Tzu-Jung; Chow, Chi-Wai; Chen, Jing-Heng; Chen, Kun-Huang

2017-11-01

To achieve a stable and selectable C-band erbium-doped fiber (EDF) laser with single-longitudinal-mode output, a multiple ring architecture is proposed and demonstrated experimentally. In this work, we design a passively quadruple-ring structure in the cavity of an EDF laser to produce a Vernier effect with a mode filter for suppressing the multimode spikes significantly. In addition, the output performance and stability of the proposed EDF ring laser are discussed.

Single component Mn-doped perovskite-related CsPb2ClxBr5-x nanoplatelets with a record white light quantum yield of 49%: a new single layer color conversion material for light-emitting diodes.

Science.gov (United States)

Wu, Hao; Xu, Shuhong; Shao, Haibao; Li, Lang; Cui, Yiping; Wang, Chunlei

2017-11-09

Single component nanocrystals (NCs) with white fluorescence are promising single layer color conversion media for white light-emitting diodes (LED) because the undesirable changes of chromaticity coordinates for the mixture of blue, green and red emitting NCs can be avoided. However, their practical applications have been hindered by the relative low photoluminescence (PL) quantum yield (QY) for traditional semiconductor NCs. Though Mn-doped perovskite nanocube is a potential candidate, it has been unable to realize a white-light emission to date. In this work, the synthesis of Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets with a pure white emission from a single component is reported. Unlike Mn-doped perovskite nanocubes with insufficient energy transfer efficiency, the current reported Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets show a 10 times higher energy transfer efficiency from perovskite to Mn impurities at the required emission wavelengths (about 450 nm for perovskite emission and 580 nm for Mn emission). As a result, the Mn/perovskite dual emission intensity ratio surprisingly elevates from less than 0.25 in case of Mn-doped nanocubes to 0.99 in the current Mn-doped CsPb 2 Cl x Br 5-x nanoplatelets, giving rise to a pure white light emission with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.35, 0.32). More importantly, the highest PL QY for Mn-doped perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets is up to 49%, which is a new record for white-emitting nanocrystals with single component. These highly luminescent nanoplatelets can be blended with polystyrene (PS) without changing the white light emission but dramatically improving perovskite stability. The perovskite-PS composites are available not only as a good solution processable coating material for assembling LED, but also as a superior conversion material for achieving white light LED with a single conversion layer.

Scintillation properties of Er-doped Y3Al5O12 single crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Ogino, Hiraku; Fujimoto, Yutaka; Suzuki, Akira; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Yoshikawa, Akira

2013-01-01

Er-doped Y 3 Al 5 O 12 single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er 3+ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of 4 I 15/2 to the excited states. The photo- and radio-luminescence spectra showed Er 3+ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y 3 Al 5 O 12 was estimated to be 63% of that of Bi 4 Ge 3 O 12 . -- Highlights: •Er doped Y 3 Al 5 O 12 single crystal scintillators were grown with different Er concentrations. •Optical properties associated with 4f-4f transition were evaluated. •Radio luminescence spectra measurements were performed under 5.5 MeV alpha-ray irradiation. •The highest light yield was estimated to be 63% of that of Bi 4 Ge 3 O 12 under 5.5 MeV alpha-ray irradiation

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

NARCIS (Netherlands)

Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

2018-01-01

A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was

Spontaneous and stimulated emission in Sm3+-doped YAl3(BO3)4 single crystal

International Nuclear Information System (INIS)

Ryba-Romanowski, Witold; Lisiecki, Radosław; Beregi, Elena; Martín, I.R.

2015-01-01

Single crystals of YAl 3 (BO 3 ) 4 doped with trivalent samarium were grown by the top-seeded high temperature solution method and their absorption and emission spectra were investigated. Optical pumping into prominent absorption band around 405 nm feeds the 4 G 5/2 metastable level giving rise to intense visible luminescence distributed in several spectral lines with the most intense line around 600 nm characterized by a branching ratio of 0.42 and peak emission cross section of 0.25×10 −20 cm 2 . Optical amplification at 600 nm with a gain coefficient of 2.9 cm −1 was achieved during a pump-and-probe experiment. - Highlights: • YAB:Sm crystal grown by the top-seeded high temperature solution method. • Spectroscopic qualities relevant for visible laser operation. • YAB:Sm single crystal used in a pump-and-probe experiment. • Optical amplification properties of samarium doped YAl 3 (BO 3 ) 4

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

Science.gov (United States)

Mitzi, D. B.; Lombardo, L. W.; Kapitulnik, A.; Laderman, S. S.; Jacowitz, R. D.

1990-04-01

A directional solidification method for growing large single crystals in the Bi2Sr2CaCu2O8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20-25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)×1021 cm-3 (0.34 holes per Cu site) to 4.6(3)×1021 cm-3 (0.50 holes per Cu site). No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen-doped Bi2Sr2CaCu2O8+δ is a suitable system for pursuing doping studies. The decrease in Tc with concentration for 0.34<=n<=0.50 indicates that a high-carrier-concentration regime exists in which Tc decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. An examination of the variation of Tc with the density of states and lattice constants for all of the doped and undoped superconducting samples considered here indicates that changes in Tc with doping are primarily affected by changes in the density of states (or carrier concentration) rather than by structural variation induced by the doping.

A novel single-step synthesis of N-doped TiO2 via a sonochemical method

International Nuclear Information System (INIS)

Wang, Xi-Kui; Wang, Chen; Guo, Wei-Lin; Wang, Jin-Gang

2011-01-01

Graphical abstract: The N-doped anatase TiO 2 nanoparticles were synthesized by sonochemical method. The as-prepared sample is characterized by XRD, TEM, XPS and UV-Vis DRS. The photocatalytic activity of the photocatalyst was evaluated by the photodegradation of an azo dye direct sky blue 5B. Highlights: → A novel singal-step sonochemical synthesis method for the preparation of anatase N-doped TiO 2 nanocrystalline at low temperature has been devoleped. → The as-prepared sample is characterized by XRD, TEM, XPS and UV-Vis DRS. → The photodegradation of azo dye direct sky blue 5 showed that the N-doped TiO 2 catalyst is of high visible-light photocatalytic activity. -- Abstract: A novel single-step synthetic method for the preparation of anatase N-doped TiO 2 nanocrystalline at low temperature has been devoleped. The N-doped anatase TiO 2 nanoparticles were synthesized by sonication of the solution of tetraisopropyl titanium and urea in water and isopropyl alcohol at 80 o C for 150 min. The as-prepared sample was characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and UV-vis absorption spectrum. The product structure depends on the reaction temperature and reaction time. The photocatalytic activity of the as-prepared photocatalyst was evaluated via the photodegradation of an azo dye direct sky blue 5B. The results show that the N-doped TiO 2 nanocrystalline prepared via sonication exhibit an excellent photocatalytic activity under UV light and simulated sunlight.

Easily controlled dye doped phosphorescent OLEDs with evaporation rate in single furnace

Energy Technology Data Exchange (ETDEWEB)

Mahmoudi, Malek; Janghouri, Mohammad; Mohajerani, Ezeddin, E-mail: e-mohajerani@sbu.ac.ir

2015-04-15

Electrical and optical characteristic, surface morphology and energy transfer of Ir(ppy){sub 3}:PtTPP were studied as a function of thermal evaporation rate. We have investigated the effect of various evaporation rates for mixture of dyes using single furnace method. When the deposition rate increased from 0.5 to 5 Ǻ/s, the luminescence efficiency, current density and energy transfer of OLED increased. AFM measurements showed that the surface roughness of the Ir(ppy){sub 3}:PtTPP films decreased with increasing deposition rates. These blends show excellent red emitting guest–host system with easier deposition rate control. - Highlights: • Thermal evaporation rate is used to control the doping by using single furnace. • The advantages of using single furnace are discussed. • It is shown that the evaporation rate also affects the surface roughness.

GASB proposes new standards for financial reporting of postemployment benefits by state and local governments.

Science.gov (United States)

Johnson, Karl D

2003-03-01

GASB has proposed new standards that will affect the way in which governments report postemployment health care benefits in audited external financial statements, resulting in more complete and transparent reporting by employers and plans and more relevant and useful information for the users of governmental financial reports. This article provides an overview of current financial reporting standards and practice, the financial reporting objectives of the project, the proposed measurement approach, noteworthy specific proposals, and the projected timetable for completion of the project and implementation of the new standards.

Antibacterial activity of single crystalline silver-doped anatase TiO{sub 2} nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiangyu, E-mail: zhangxiangyu@tyut.edu.cn; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin, E-mail: tangbin@tyut.edu.cn

2016-05-30

Graphical abstract: The silver-doped TiO{sub 2} nanowire arrays on titanium foil substrate were synthesized via a two-step process. It includes: deposition of AgTi films on titanium foil by magnetron sputtering; preparation of AgNW arrays on AgTi films via alkali (NaOH) hydrothermal treatment and ion-exchange with HCl, followed by calcinations. - Highlights: • Ag-doped TiO{sub 2} nanowire arrays have been prepared by a duplex-treatment. • The duplex-treatment consisted of magnetron sputtering and hydrothermal growth. • Ag-doped nanowire arrays show excellent antibacterial activity against E. coli. - Abstract: Well-ordered, one-dimensional silver-doped anatase TiO{sub 2} nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO{sub 2} nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

Growth of optical-quality anthracene crystals doped with dibenzoterrylene for controlled single photon production

Energy Technology Data Exchange (ETDEWEB)

Major, Kyle D., E-mail: kyle.major11@imperial.ac.uk; Lien, Yu-Hung; Polisseni, Claudio; Grandi, Samuele; Kho, Kiang Wei; Clark, Alex S.; Hwang, J.; Hinds, E. A., E-mail: ed.hinds@imperial.ac.uk [Centre for Cold Matter, Department of Physics, Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom)

2015-08-15

Dibenzoterrylene (DBT) molecules within a crystalline anthracene matrix show promise as quantum emitters for controlled, single photon production. We present the design and construction of a chamber in which we reproducibly grow doped anthracene crystals of optical quality that are several mm across and a few μm thick. We demonstrate control of the DBT concentration over the range 6–300 parts per trillion and show that these DBT molecules are stable single-photon emitters. We interpret our data with a simple model that provides some information on the vapour pressure of DBT.

Retracted-Enhanced X-Ray Absorption Property of Gold-Doped Single Wall Carbon Nanotube

Directory of Open Access Journals (Sweden)

Alimin Alimin

2015-11-01

Full Text Available Enhanced X-ray absorption property of single wall carbon nanotube (SWCNT through gold (Au doping (Au@SWCNT has been studied. Mass attenuation coefficient of SWCNT increased 5.2-fold after Au doping treatment. The use of ethanol in the liquid phase adsorption could produce Au nanoparticles as confirmed by the X-ray Diffraction (XRD patterns. The possibility of gold nanoparticles encapsulated in the internal tube space of SWCNT was observed by transmission electron microscope technique. A significant decrease of nitrogen uptakes and upshifts of Radial Breathing Mode (RBM of Au@SWCNT specimen suggest that the nanoparticles might be encapsulated in the internal tube spaces of the nanotube. In addition, a decrease intensity of XRD pattern of Au@SWCNT at around 2θ ≈ 2.6° supports the suggestion that Au nanoparticles are really encapsulated into SWCNT.

Synergistic effect of non-covalent interaction in colloidal nematic liquid crystal doped with magnetic functionalized single-walled carbon nanotubes

Science.gov (United States)

Dalir, Nima; Javadian, Soheila

2018-03-01

Single-walled carbon nanotubes (SWCNTs), CNT@Fe3O4, and Fe3O4 nanocomposites were doped to eutectic uniaxial nematic liquid crystal (NLC's) (E5CN7) to improve physiochemical properties such as phase transition temperature, activation energy (Ea), dielectric anisotropy, and electro-optical properties. The thermal study of nematic phase shows a decrease in the nematic to isotropic phase transition temperature as CNT is doped. However, higher doping concentration of CNTs leads to the further increase in transition temperature. The anchoring effect or π-π interaction plays a key role in N-I phase transition. The functionalization of SWCNTs with Fe3O4 diminishes the CNT aggregation while the magnetic susceptibility is increased. The functionalized CNT doping to NLC's decrease significantly the phase transition temperature compared to doping of non-functionalized CNTs. Attractive interaction between guest and host molecules by magnetic and geometry effect increased the enthalpy and entropy of phase transition in the SWCNT@Fe3O4 sample compared to non-functionalized CNT doped system. Also, the Ea values are decreased as SWCNT@Fe3O4 is doped to pure E5CN7. The difference of N-I phase transition temperature was observed in Fe3O4 and CNT@Fe3O4 compared to SWCNT doped systems. Finally, dielectric anisotropy was increased in the doped system compared to pure NLC.

Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

Science.gov (United States)

Asadov, S. M.; Mustafaeva, S. N.

2018-03-01

Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS2-based single crystals grown by the Bridgman-Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa0.995Sb0.005S2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.

Defect types and room temperature ferromagnetism in N-doped rutile TiO2 single crystals

Science.gov (United States)

Qin, Xiu-Bo; Li, Dong-Xiang; Li, Rui-Qin; Zhang, Peng; Li, Yu-Xiao; Wang, Bao-Yi

2014-06-01

The magnetic properties and defect types of virgin and N-doped TiO2 single crystals are probed by superconducting quantum interference device (SQUID), X-ray photoelectron spectroscopy (XPS), and positron annihilation analysis (PAS). Upon N doping, a twofold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancy, rather to unpaired 3d electrons in Ti3+, arising from titanium vacancies and the replacement of O with N atoms in the rutile structure. The production of titanium vacancies can enhance the room temperature ferromagnetism (RTFM), and substitution of O with N is the onset of ferromagnetism by inducing relatively strong ferromagnetic ordering.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Mitzi, D.B.; Lombardo, L.W.; Kapitulnik, A.; Laderman, S.S.; Jacowitz, R.D.

1990-01-01

A directional solidification method for growing large single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20--25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)x10 21 cm -3 (0.34 holes per Cu site) to 4.6(3)x10 21 cm -3 (0.50 holes per Cu site)

DFT investigation of NH{sub 3}, PH{sub 3}, and AsH{sub 3} adsorptions on Sc-, Ti-, V-, and Cr-doped single-walled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Buasaeng, Prayut; Rakrai, Wandee [Computational Chemistry Center for Nanotechnology and Department of Chemistry, Faculty of Science and Technology, Rajabhat Maha Sarakham University, Maha Sarakham, 44000 (Thailand); Wanno, Banchob [Center of Excellence for Innovation in Chemistry and Supramolecular Chemistry Research Unit, Department of Chemistry, Faculty of Science, Mahasarakham University, Maha Sarakham, 44150 (Thailand); Tabtimsai, Chanukorn, E-mail: tabtimsai.c@gmail.com [Computational Chemistry Center for Nanotechnology and Department of Chemistry, Faculty of Science and Technology, Rajabhat Maha Sarakham University, Maha Sarakham, 44000 (Thailand)

2017-04-01

Highlights: • Transition metal-doped single wall carbon nanotubes and their adsorption with NH{sub 3}, PH{sub 3} and AsH{sub 3} molecules were investigated using a DFT method. • Adsorptions of NH{sub 3}, PH{sub 3} and AsH{sub 3} molecules on pristine single wall carbon nanotubeswere improved by transition metal doping. • Structural and electronic properties of single wall carbon nanotubes were significantly changed by transition metal doping and gas adsorptions. - Abstract: The adsorption properties of ammonia (NH{sub 3}), phosphine (PH{sub 3}), and arsine (AsH{sub 3}) on pristine and transition metal- (TM = Sc, Ti, V, and Cr) doped (5,5) armchair single-walled carbon nanotubes (SWCNTs) were theoretically investigated. The geometric and electronic properties and adsorption abilities for the most stable configuration of NH{sub 3}, PH{sub 3}, and AsH{sub 3} adsorptions on pristine and TM-doped SWCNTs were calculated. It was found that the binding abilities of TMs to the SWCNT were in the order: Cr > V > Sc > Ti. However, the adsorption energy showed that the pristine SWCNT weakly adsorbed gas molecules and its electronic properties were also insensitive to gas molecules. By replacing a C atom with TM atoms, all doping can significantly enhance the adsorption energy of gas/SWCNT complexes and their adsorption ability was in the same order: NH{sub 3} > PH{sub 3} > AsH{sub 3}. A remarkable increase in adsorption energy and charge transfer of these systems was expected to induce significant changes in the electrical conductivity of the TM-doped SWCNTs. This work revealed that the sensitivity of SWCNT-based chemical gas adsorptions and sensors can be greatly improved by introducing an appropriate TM dopant. Accordingly, TM-doped SWCNTs are more suitable for gas molecule adsorptions and detections than the pristine SWCNT.

A comprehensive analysis about thermal conductivity of multi-layer graphene with N-doping, -CH3 group, and single vacancy

Science.gov (United States)

Si, Chao; Li, Liang; Lu, Gui; Cao, Bing-Yang; Wang, Xiao-Dong; Fan, Zhen; Feng, Zhi-Hai

2018-04-01

Graphene has received great attention due to its fascinating thermal properties. The inevitable defects in graphene, such as single vacancy, doping, and functional group, greatly affect the thermal conductivity. The sole effect of these defects on the thermal conductivity has been widely studied, while the mechanisms of the coupling effects are still open. We studied the combined effect of defects with N-doping, the -CH3 group, and single vacancy on the thermal conductivity of multi-layer graphene at various temperatures using equilibrium molecular dynamics with the Green-Kubo theory. The Taguchi orthogonal algorithm is used to evaluate the sensitivity of N-doping, the -CH3 group, and single vacancy. Sole factor analysis shows that the effect of single vacancy on thermal conductivity is always the strongest at 300 K, 700 K, and 1500 K. However, for the graphene with three defects, the single vacancy defect only plays a significant role in the thermal conductivity modification at 300 K and 700 K, while the -CH3 group dominates the thermal conductivity reduction at 1500 K. The phonon dispersion is calculated using a spectral energy density approach to explain such a temperature dependence. The combined effect of the three defects further decreases the thermal conductivity compared to any sole defect at both 300 K and 700 K. The weaker single vacancy effect is due to the stronger Umklapp scattering at 1500 K, at which the combined effect seriously covers almost all the energy gaps in the phonon dispersion relation, significantly reducing the phonon lifetimes. Therefore, the temperature dependence only appears on the multi-layer graphene with combined defects.

H+ irradiation effect in Co-doped BaFe2As2 single crystals

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Tamegai, T.; Kitamura, H.; Murakami, T.

2011-01-01

The effect of H + irradiation on the suppression of Tc in Co-doped BaFe 2 As 2 . H + irradiation introduces nonmagnetic scattering centers. Critical Scattering rate is much higher than that expected in s±-pairing scenario. We report the suppression of the critical temperature T c in single crystalline Ba(Fe 1-x Co x ) 2 As 2 at under-, optimal-, and over-doping levels by 3 MeV proton irradiation. T c decreases and residual resistivity increases monotonically with increasing the dose. The low-temperature resistivity does not show the upturn in contrast with the α-particle irradiated NdFeAs(O,F), which suggests that proton irradiation introduces nonmagnetic scattering centers. Critical scattering rates for all samples obtained by three different ways are much higher than that expected in s±-pairing scenario based on inter-band scattering due to antiferro-magnetic spin fluctuations.

Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

KAUST Repository

Mantega, M.

2012-07-19

We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

KAUST Repository

Mantega, M.; Rungger, I.; Naydenov, B.; Boland, J. J.; Sanvito, S.

2012-01-01

We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

International Nuclear Information System (INIS)

Harun, S.W.; Ahmad, H.

2004-01-01

Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

Doping dependence of magnetic and transport properties in single crystalline Co-doped BaFe2As2

International Nuclear Information System (INIS)

Nakajima, Yasuyuki; Taen, Toshihiro; Tamegai, Tsuyoshi

2010-01-01

We report the doping dependence of transport and magnetic properties in Co-doped BaFe 2 As 2 . With increasing Co concentration x, structural and magnetic transitions are suppressed and superconductivity emerges in the range of 0.3 c at low temperatures and low fields obtained from bulk magnetization is reasonably large and the doping dependence shows a maximum at x∼0.07 similar to T c . The values of J c at low temperatures reach about 1x10 6 A/cm 2 around the optimally doped region, which is potentially attractive for technological applications.

Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

Science.gov (United States)

Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

2018-04-01

Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

International Nuclear Information System (INIS)

Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

2013-01-01

To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

Characterizations of Pr-doped Yb3Al5O12 single crystals for scintillator applications

Science.gov (United States)

Yoshida, Yasuki; Shinozaki, Kenji; Igashira, Takuya; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-04-01

Yb3Al5O12 (YbAG) single crystals doped with different concentrations of Pr were synthesized by the Floating Zone (FZ) method. Then, we evaluated their basic optical and scintillation properties. All the samples showed photoluminescence (PL) with two emission bands appeared approximately 300-500 nm and 550-600 nm due to the charge transfer luminescence of Yb3+ and intrinsic luminescence of the garnet structure, respectively. A PL decay profile of each sample was approximated by a sum of two exponential decay functions, and the obtained decay times were 1 ns and 3-4 ns. In the scintillation spectra, we observed emission peaks in the ranges from 300 to 400 nm and from 450 to 550 nm for all the samples. The origins of these emissions were attributed to charge transfer luminescence of Yb3+ and intrinsic luminescence of the garnet structure, respectively. The scintillation decay times became longer with increasing the Pr concentrations. Among the present samples, the 0.1% Pr-doped sample showed the lowest scintillation afterglow level. In addition, pulse height spectrum of 5.5 MeV α-rays was demonstrated using the Pr-doped YbAG, and we confirmed that all the samples showed a full energy deposited peak. Above all, the 0.1% Pr-doped sample showed the highest light yield with a value of 14 ph/MeV under α-rays excitation.

Efficient single-mode operation of a cladding-pumped ytterbium-doped helical-core fiber laser.

Science.gov (United States)

Wang, P; Cooper, L J; Sahu, J K; Clarkson, W A

2006-01-15

A novel approach to achieving robust single-spatial-mode operation of cladding-pumped fiber lasers with multimode cores is reported. The approach is based on the use of a fiber geometry in which the core has a helical trajectory within the inner cladding to suppress laser oscillation on higher-order modes. In a preliminary proof-of-principle study, efficient single-mode operation of a cladding-pumped ytterbium-doped helical-core fiber laser with a 30 microm diameter core and a numerical aperture of 0.087 has been demonstrated. The laser yielded 60.4 W of output at 1043 nm in a beam with M2 clad fiber lasers.

Doping evolution of the electronic structure in the single-layer cuprates Bi2Sr2−xLaxCuO6 delta: Comparison with other single-layer cuprates

Energy Technology Data Exchange (ETDEWEB)

Hashimoto, M.

2010-04-30

We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi{sub 2}Sr{sub 2-x}La{sub x}CuO{sub 6+{delta}} (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi 'arc' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2} (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La{sub 2-x}Sr{sub x}CuO{sub 4} (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tightbinding fit, and the deduced next-nearest-neighbor hopping integral t also confirm the similarity to Na-CCOC and the difference from LSCO.

Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

Science.gov (United States)

Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

2018-06-05

SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

Influence of magnetic and ultrasonic fields on coefficient of reflectivity of GaAs, GaSb and InAs crystals

International Nuclear Information System (INIS)

Zaveryukhin, B.N.; Zaveryukhina, N.N.; Zaveryukhina, E.V.; Volodarskiy, V.V.

2007-01-01

Full text: Previously we demonstrated for the first time in the world that ultrasonic waves of the megahertz range can change the transport properties and a structure of semiconductors. In this work we have experimentally studied the influence of ultrasonic treatment on the spectral coefficients of reflection R in the magnetic fields of the samples of GaAs-, GaSb- and InAs-crystals. The reflectance spectra in the magnetic field of the samples before and after the ultrasonic treatment (UST) for a certain time were measured in a broad wavelength range including ultraviolet, visible, and infrared spectral regions. The semi-insulating GaAs-crystals had a thickness d=100 μm and a working area S of up to 3sm 2 . The p-GaSb- crystals had an area of S=0.25sm 2 and d =250 μm. The base p-GaSb-layers possessed the concentration N=2·10 17 sm 3 and n-GaSb-layers with a thickness of 0.5 m were created by diffusion doping with phosphorus. Besides, the experiments were performed also for of the n-InAs-crystals. The samples of the InAs-n crystals had a thickness of 100 μm an area S = 0.25 sm 2 . Some remains of sulfuric (S) were discovered in InAs-samples. As could was see from the experiments, all the initial IR spectra measured for the samples with various dopant concentrations NP exhibit maximums (peaks) for 0.2 μm and minimum (holes) for. The reflectance spectra measured after UST for time of t > l hour clearly reveal a shift of the R minima toward longer wavelengths and a general decrease in the reflectance of each sample. The shift of the R is unambiguous evidence of the acoustically stimulated diffusion of impurity (phosphorus) inward of the samples. Discovered peaks and holes slitted and changed their sizes in the magnetic fields. It should be emphasized that behavior of the R spectra of the GaAs-, In As- and GaSb- samples is determined by the same mechanisms. Changes of the R spectra after the UST are explained by acoustically stimulated diffusion of the dopant inward

Influence of MgSO{sub 4} doping on the properties of zinc tris–thiourea sulphate (ZTS) single crystals

Energy Technology Data Exchange (ETDEWEB)

Selvapandiyan, M., E-mail: mselvapandiyan@rediffmail.com [Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai 635 207 (India); Arumugam, J. [Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai 635 207 (India); Sundaramoorthi, P. [Department of Physics, Thiruvalluvar Government Arts College, Rasipuram 637 401 (India); Sudhakar, S. [CSIR–National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110 012 (India)

2013-12-15

Highlights: •The influence of MgSO{sub 4} doping on the properties of ZTS single crystals grown at room temperature. •Thermal stability of the crystals increased with incorporation of Mg atom. •Energy band gap was estimated from UV–vis spectra. •ZTS is a potential material for frequency conversion. •Both pure and doped ZTS crystals are belonging to category of typical insulating materials. -- Abstract: The influence of MgSO{sub 4} doping on the properties of zinc tris–thiourea sulphate single crystals grown at room temperature by slow evaporation solution growth technique was studied. Powder XRD analysis confirmed the orthorhombic crystal structure with noncentrosymmetric space group Pca2{sub 1}. The mechanical properties of the grown crystals were analysed by Vicker’s microhardness method. Functional groups present in the materials were identified by FTIR spectral analysis in the range between 4000 and 400 cm{sup −1}. The UV–Vis spectrum indicates that the UV cut-off wavelength of the crystals has less than 297 nm. The thermal stability of the grown crystals was determined with the aid of thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC). Second order nonlinear optical behaviour of the grown crystals have been confirmed by Kurtz powder second harmonic generation (SHG) test.

Optical properties of GaSb(001)-c(2 x 6): The role of surface antisite defects

Energy Technology Data Exchange (ETDEWEB)

Hogan, Conor; Del Sole, Rodolfo [Department of Physics, CNR-INFM-SMC, Roma (Italy); European Theoretical Spectroscopy Facility (ETSF), University of Rome ' ' Tor Vergata' ' , Roma (Italy); Magri, Rita [Centro S3-CNR-Istituto di Nanoscienze, Modena (Italy); Department of Physics, University of Modena and Reggio Emilia, Modena (Italy)

2010-08-15

We consider the formation of surface antisite defects on a previously proposed model for the GaSb(001)-c(2 x 6) surface. Based on ab initio total energy calculations, we show how these defects stabilize the otherwise metallic surface and how their formation is driven by the excess charge associated with the Sb-rich surface conditions. The surface-sensitive optical technique of reflectance anisotropy spectroscopy is shown to be crucial for detecting the defects, and computation of spectra yields a good agreement with experiment when defects are included in the surface reconstruction. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Four-phonon processes in the thermal conductivity of GaSb

International Nuclear Information System (INIS)

Aliev, M.I.; Arasly, D.G.; Guseinov, R.E.

1978-01-01

Phonon thermal conductivity of GaSb in the 300-700 K temperature range is studied by the light pulsed heating which is aimed at estimation of contributions of different polarized branches of acoustic oscillations into lattice thermal conductivity. The role of optico-acoustic interactions and multiphonon processes in phonon-phonon scattering at high temperatures is discussed. It is shown that the X thermal conductivity caused by the current carriers is negligibly small, and the Xsub(ph) phonon conductivity changes depending on temperature according to the Xsub(ph) approximately Tsup(-1.4) law. While calculating Xsub(ph) according to the Holland model taking into account phonon scattering on point defects the phonon thermal conductivity is given as a sum of contributions from longitudinal and transverse low-frequency Xsub(th1) and high-frequency Xsub(th2) acoustic phonons. It is established that at T>500 K Xsub(ph) is caused only by high-frequency transverse phonons and to explain the observed Xsub(ph) dependence on temperature it is necessary to introduce four-phonon process along with the three-phonon processes into intraphonon scattering

Implicit versus explicit attitude to doping: Which better predicts athletes' vigilance towards unintentional doping?

Science.gov (United States)

Chan, Derwin King Chung; Keatley, David A; Tang, Tracy C W; Dimmock, James A; Hagger, Martin S

2018-03-01

This preliminary study examined whether implicit doping attitude, explicit doping attitude, or both, predicted athletes' vigilance towards unintentional doping. A cross-sectional correlational design. Australian athletes (N=143;M age =18.13, SD=4.63) completed measures of implicit doping attitude (brief single-category implicit association test), explicit doping attitude (Performance Enhancement Attitude Scale), avoidance of unintentional doping (Self-Reported Treatment Adherence Scale), and behavioural vigilance task of unintentional doping (reading the ingredients of an unfamiliar food product). Positive implicit doping attitude and explicit doping attitude were negatively related to athletes' likelihood of reading the ingredients table of an unfamiliar food product, and positively related to athletes' vigilance towards unintentional doping. Neither attitude measures predicted avoidance of unintentional doping. Overall, the magnitude of associations by implicit doping attitude appeared to be stronger than that of explicit doping attitude. Athletes with positive implicit and explicit doping attitudes were less likely to read the ingredients table of an unknown food product, but were more likely to be aware of the possible presence of banned substances in a certain food product. Implicit doping attitude appeared to explain athletes' behavioural response to the avoidance of unintentional doping beyond variance explained by explicit doping attitude. Copyright © 2017 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Thickness-dependent photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

International Nuclear Information System (INIS)

Yue Zengji; Zhao Kun; Zhao Songqing; Lu Zhiqing; Li Xiaoming; Ni Hao; Wang Aijun

2010-01-01

The photovoltaic effects of Nb-doped SrTiO 3 single crystals with different thicknesses were investigated under the illumination of ultraviolet pulsed lasers. The peak photovoltage increased and then decreased quickly with the decrease in crystal thickness, and a maximum photovoltage occurred for the 180 μm-thick crystal. The photovoltaic response time decreased monotonically with decreasing crystal thickness. The present results suggested the promising potential of reducing crystal thickness in high sensitivity detectors with fast response.

A single-frequency, ring cavity Tm-doped fiber laser based on a CMFBG filter

International Nuclear Information System (INIS)

Li, Qi; Yan, Fengping; Peng, Wanjing; Liu, Shuo; Feng, Ting; Tan, Siyu; Liu, Peng

2013-01-01

A single-frequency (SF), continuous-wave (CW), ring cavity Tm-doped fiber laser has been proposed and demonstrated. A chirped moiré fiber grating (CMFBG) was used as an ultra-narrow filter in the laser cavity to ensure SF operation. When the launched pump power was fixed at 2 W, this proposed laser was in stable operation with a central wavelength, optical signal-to-noise ratio, and full width at half maximum of 1942.8140 nm, 47 dB, and 0.0522 nm, respectively, with a resolution of 0.05 nm. The maximum output power of this laser is 95 mW, a higher output power is restricted by the optical circulator that is used in the cavity. The SF operation of this laser was confirmed by the self-homodyne method. To the best of the authors’ knowledge, this is the first report on an SF, CW, ring cavity Tm-doped fiber laser with a CMFBG filter. (letter)

Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

NARCIS (Netherlands)

Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

2017-01-01

A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the

An investigation on photoluminescence and energy transfer of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors

Energy Technology Data Exchange (ETDEWEB)

Bandi, Vengala Rao; Grandhe, Bhaskar Kumar [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan (Korea, Republic of)

2013-07-15

The present investigation aims to demonstrate the potentiality of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors, which were prepared by a sol–gel method. The X-ray diffraction (XRD) profiles showed that all the observed peaks could be attributed to the monoclinic phase of Ca{sub 4}YO(BO{sub 3}){sub 3}. From the measured emission profiles, we have noticed that both the single-doped Eu{sup 3+}/Sm{sup 3+} phosphors shows four emission transitions of {sup 5}D{sub 0} → {sup 7}F{sub 0,1,2,3} and {sup 4}G{sub 5/2} → {sup 6}H{sub 5/2,7/2,9/2,11/2} respectively. Among them, the {sup 5}D{sub 0} → {sup 7}F{sub 2} of Eu{sup 3+} and {sup 4}G{sub 5/2} → {sup 6}H{sub 7/2} of Sm{sup 3+} are intense emission transitions, leading to an intense red color emission from the prepared phosphors. The excitation spectra showed that Eu{sup 3+}/Sm{sup 3+} doped samples can be excited efficiently by 394 nm and 402 nm respectively, incidentally which matches well with the characteristic emission from UVLED. The co-doping of Sm{sup 3+} ions can broaden and strengthen the absorption of near UV region and to be efficient to sensitize the emission of the Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} phosphor. The mechanism involved in the energy transfer between Eu{sup 3+} and Sm{sup 3+} has been explained and elucidated by an energy level diagram. - Highlights: • Eu{sup 3+} or/and Sm{sup 3+}:Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors were prepared by sol–gel method. • The co-doping of Sm{sup 3+} to Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} extends its absorption of NUV region. • It has intense absorption in NUV region, which is suitable for NUV LED. • The energy transfer process between Eu{sup 3+} and Sm{sup 3+} ions were discussed.

Homojunction p-n photodiodes based on As-doped single ZnO nanowire

International Nuclear Information System (INIS)

Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

2013-01-01

Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

Surface characterization of III-V MOCVD films from heterocyclic single-source precursors; Oberflaechencharakterisierung von III-V MOCVD-Filmen aus heterozyklischen Single Source Precursoren

Energy Technology Data Exchange (ETDEWEB)

Seemayer, Andreas

2009-07-13

In the present thesis the sublimation and evaporation properties of heterocyclic gallium and antimony containing single-source precursors as well as the chemical composition and morphology of the films fabricated from this were studied. The single-source precursors available by a new synthesis route were characterized concerning their evaporation properties and the obtained films studied surface-physically. By this way the process parameters were optimized and the applicability of the single-source precursors in HV-MOCVD processes studied. By evaporation experiments in the UHV it could be shown that thereby lighter ligands like ethyl- and methyl-groups lead to a lower contamination of the reaction space with carbon containing molecules. Furthermore it was expected that the 6-rings synthetized with short ligands exhibit a high stability. This however could not be confirmed. By unwanted parasitary reactions in the gaseous phase respectively dissociative sublimation in the gaseous phase a deposition of GaSb with these precursors was not possible. The 4-ring stabilized with tertiary-butyl and ethyl-groups caused in the evaporation the largest contamination of the gaseous phase, becauselonger-chain hydrocarbons exhibil only a bad pump cross section. By parasitary reactions originating elementary antimony is detectable in the gaseous phase. The films were studied concerning their chemical composition and their transport- respectively storage-conditioned surface contamination. Furthermore it has become clear that not only a purely synthetized precursor substance but also the reactor design is deciding for a successful deposition and a high film quality. First by successive optimization of the evaporation geometry it was possible to reduce the roughness of the produced GaSb films down to about 10 nm-30 nm.

Magnetic, electric and electron magnetic resonance properties of orthorhombic self-doped La1-xMnO3 single crystals

International Nuclear Information System (INIS)

Markovich, V; Fita, I; Shames, A I; Puzniak, R; Rozenberg, E; Yuzhelevski, Ya; Mogilyansky, D; Wisniewski, A; Mukovskii, Ya M; Gorodetsky, G

2003-01-01

The effect of lanthanum deficiency on structural, magnetic, transport, and electron magnetic resonance (EMR) properties has been studied in a series of La 1-x MnO 3 (x = 0.01, 0.05, 0.11, 0.13) single crystals. The x-ray diffraction study results for the crystals were found to be compatible with a single phase of orthorhombic symmetry. The magnetization curves exhibit weak ferromagnetism for all samples below 138 K. It was found that both the spontaneous magnetization and the coercive field increase linearly with x. The pressure coefficient dT N /dP decreases linearly with self-doping, from a value of 0.68 K kbar -1 for La 0.99 MnO 3 to 0.33 K kbar -1 for La 0.87 MnO 3 . The resistivity of low-doped La 0.99 MnO 3 crystal is of semiconducting character, while that of La 0.87 MnO 3 depends weakly on temperature between 180 and 210 K. It was found that the magnetic and transport properties of the self-doped compounds may be attributed to a phase separation involving an antiferromagnetic matrix and ferromagnetic clusters. The latter phases as well as their paramagnetic precursors have been directly observed by means of EMR

Defect-induced Catalysis toward the Oxygen Reduction Reaction in Single-walled Carbon Nanotube: Nitrogen doped and Non-nitrogen doped

International Nuclear Information System (INIS)

Lu, Di; Wu, Dan; Jin, Jian; Chen, Liwei

2016-01-01

Single-walled carbon nanotubes (SWNTs) are post-treated by argon (Ar) or ammonia (NH 3 ) plasma irradiation to introduce defects that are potentially related to catalysis towards the oxygen reduction reaction (ORR). Electrochemical characterization in alkali medium suggests that the plasma irradiated SWNTs demonstrate enhanced catalytic activity toward the ORR with a positively shifted threshold potential. Moreover the enhanced desired four-electron pathway catalytic activity, which exhibited as the positive shifted threshold potential, is independent of the nitrogen dopant. The nature of the defects is probed with Raman and X-ray photoelectron spectroscopy. The results indicate that the non-nitrogen doped defects of SWNTs contribute to the actual active site for the ORR.

Photocatalytic characteristics of single phase Fe-doped anatase TiO2 nanoparticles sensitized with vitamin B12

International Nuclear Information System (INIS)

Gharagozlou, Mehrnaz; Bayati, R.

2015-01-01

Highlights: • Anatase TiO 2 /B 12 hybrid nanostructured catalyst was successfully synthesized by sol–gel technique. • The nanoparticle catalyst was doped with iron at several concentrations. • Nanoparticles were characterized in detail by XRD, Raman, TEM, EDS, and spectroscopy techniques. • The formation mechanism and role of point defects on photocatalytic properties were discussed. • A structure-property-processing correlation was established. - Abstract: We report a processing-structure-property correlation in B 12 -anatase titania hybrid catalysts doped with several concentrations of iron. Our results clearly show that low-level iron doping alters structure, defect content, and photocatalytic characteristics of TiO 2 . XRD and Raman studies revealed formation of a single-phase anatase TiO 2 where no iron based segregation in particular iron oxide, was detected. FT-IR spectra clearly confirmed sensitization of TiO 2 nanoparticles with vitamin B 12 . TEM micrographs and diffraction patterns confirmed crystallization of anatase nanoparticles with a radius of 15–20 nm. Both XRD and Raman signals showed a peak shift and a peak broadening which are surmised to originate from creation of point defects, namely oxygen vacancy and titanium interstitial. The doped samples revealed a narrower band gap as compared to undoped samples. Photocatalytic activity of the samples was assessed through measuring the decomposition rate of rhodamine B. It was found that sensitization with vitamin B 12 and Fe-doping significantly enhances the photocatalytic efficiency of the anatase nanoparticles. We also showed that there is an optimum Fe-doping level where the maximum photocatalytic activity is achieved. The boost of photocatalytic activity was qualitatively understood to originate from a more effective use of the light photons, formation of point defects, which enhance the charge separation, higher carrier mobility

Growth and electrical properties of (Mn,F) co-doped 0.92Pb(Zn 1/3Nb 2/3)O 3-0.08PbTiO 3 single crystal

Science.gov (United States)

Zhang, Shujun; Lebrun, Laurent; Randall, Clive A.; Shrout, Thomas R.

2004-06-01

The growth and characterization of (Mn,F) doped Pb(Zn 1/3Nb 2/3)O 3-PbTiO 3 (PZNT) single crystals are reported in this paper. The typical single crystal obtained is up to 30 mm size with dark brown color. The crystal lattice parameters of doped PZNT crystal are slightly decreased compared to the pure one. The room temperature dielectric permittivity along direction is about 6000, which is lower than that of the pure PZNT8 because of the dopants. The Curie temperature of the doped crystal is about 180°C while the ferroelectric phase transition temperature is around 100°C, which are higher than those of the pure PZNT8 single crystal. The remnant polarization and coercive field of oriented doped crystal measured at 1 Hz and 10 kV/cm field are about 27 μC/cm 2 and 4.2 kV/cm, respectively. The room temperature mechanical quality factor is ˜300. Piezoelectric coefficient of oriented doped crystal is higher than 3500 pC/N and the longitudinal electromechanical coupling factor is larger than 93%. The piezoelectric properties of doped PZNT single crystal with temperature and orientations are also reported in this paper. The valence state of the manganese dopant was determined by electron spin resonance, indicating no Mn 4+ in the crystals, suggesting the valence of manganese ions in PZNT crystals may be 2+, which acts as a hardener, stabilizes the domain wall and pins the domain wall motion, on the other hand, the dopant will enter Ti 4+ position, shifting the crystal composition to higher PT content.

Establishing a novel single-copy primer-internal intron-spanning PCR (spiPCR) procedure for the direct detection of gene doping.

Science.gov (United States)

Beiter, Thomas; Zimmermann, Martina; Fragasso, Annunziata; Armeanu, Sorin; Lauer, Ulrich M; Bitzer, Michael; Su, Hua; Young, William L; Niess, Andreas M; Simon, Perikles

2008-01-01

So far, the abuse of gene transfer technology in sport, so-called gene doping, is undetectable. However, recent studies in somatic gene therapy indicate that long-term presence of transgenic DNA (tDNA) following various gene transfer protocols can be found in DNA isolated from whole blood using conventional PCR protocols. Application of these protocols for the direct detection of gene doping would require almost complete knowledge about the sequence of the genetic information that has been transferred. Here, we develop and describe the novel single-copy primer-internal intron-spanning PCR (spiPCR) procedure that overcomes this difficulty. Apart from the interesting perspectives that this spiPCR procedure offers in the fight against gene doping, this technology could also be of interest in biodistribution and biosafety studies for gene therapeutic applications.

Growth and Properties of Oxygen and Ion Doped BISMUTH(2) STRONTIUM(2) Calcium COPPER(2) Oxygen (8+DELTA) Single Crystals

Science.gov (United States)

Mitzi, David Brian

1990-01-01

A directional solidification method for growing large single crystals in the Bi_2Sr _2CaCu_2O _{8+delta} system is reported. Ion substitutions, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Ion doping results in little change of the superconducting transition for substitution levels below 20-25% (as a result of simultaneous oxygen intercalation), while beyond this level, the Meissner signal broadens and the low temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals, provides evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90K (as made) to 77K (oxygen pressure annealed) while the Hall concentrations increase from n = 3.1(3) times 10 ^{21} cm^{ -3} (0.34 holes/Cu site) to 4.6(3) times 10^{21} cm^{-3} (0.50 holes/Cu site). Further suppression of T_{c} to 72K is possible by annealing in oxygen pressures up to 100atm. No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen doped Bi_2Sr _2CaCu_2O _{8+delta} is a suitable system for pursuing doping studies. The decrease in T _{c} with concentration for 0.34 <=q n <=q 0.50 indicates that a high carrier concentration regime exists where T_{c} decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. The physical properties of these Bi _2Sr_2CaCu _2O_{8+delta} crystals, in this high carrier concentration regime, will be discussed.

Mechanical properties of pure and doped InP single crystals under concentrated loading

International Nuclear Information System (INIS)

Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

1997-01-01

The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

Photoluminescence characteristics of reddish-orange Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors

Energy Technology Data Exchange (ETDEWEB)

Jeong, Jun Ho; Bandi, Vengala Rao; Grandhe, Bhaskar Kumar; Jang, Ki Wan; Lee, Ho Sueb [Changwon National University, Changwon (Korea, Republic of); Yi, Soung Soo [Silla University, Busan (Korea, Republic of); Jeong, Jung Hyun [Pukyong National University, Busan (Korea, Republic of)

2011-02-15

Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors were synthesized by using a conventional solid state reaction method at 750 .deg. C. The emission spectra of KZnGd{sub 1-x}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} with {lambda}{sub ex} = 395 nm and KZnGd{sub 1-y}(PO{sub 4}){sub 2}:Sm{sup 3+}{sub y} with {lambda}{sub ex} = 403 nm phosphors showed intense {sup 5}D{sub 0} {yields} {sup 7}F{sub 1}, {sup 4}G{sub 5/2} {yields} {sup 6}H{sub 7/2} emission transitions at 595 nm and 599 nm, respectively. The optimum relative intensity of the KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} , Sm{sup 3+}{sub y} phosphor was obtained for the doping concentrations of (x = 0.09, y = 0.01). In addition, the temperature dependent luminescence intensity of the synthesized phosphors was investigated and the thermal stability of the KZnGd(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor was found to be higher than that of standard YAG:Ce{sup 3+} and KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} Sm{sup 3+}{sub y} under near ultra-violet (NUV) light emitting diode excitation (LED). Therefore, we suggest that Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors should be efficient for different red-color-emitting display device applications and NUV-LED-based white-light-emitting diodes.

Luminescence properties of Tm3+ ions single-doped YF3 materials in an unconventional excitation region.

Science.gov (United States)

Chen, Yuan; Liu, Qing; Lin, Han; Yan, Xiaohong

2018-05-01

According to the spectral distribution of solar radiation at the earth's surface, under the excitation region of 1150 to 1350 nm, the up-conversion luminescence of Tm 3+ ions was investigated. The emission bands were matched well with the spectral response region of silicon solar cells, achieved by Tm 3+ ions single-doped yttrium fluoride (YF 3 ) phosphor, which was different from the conventional Tm 3+ /Yb 3+ ion couple co-doped materials. Additionally, the similar emission bands of Tm 3+ ions were achieved under excitation in the ultraviolet region. It is expected that via up-conversion and down-conversion routes, Tm 3+ -sensitized materials could convert photons to the desired wavelengths in order to reduce the energy loss of silicon solar cells, thereby enhancing the photovoltaic efficiency. Copyright © 2018 John Wiley & Sons, Ltd.

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

Science.gov (United States)

Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

Science.gov (United States)

Schlangen, Sebastian; Bremer, Kort; Zheng, Yulong; Böhm, Sebastian; Steinke, Michael; Wellmann, Felix; Neumann, Jörg; Overmeyer, Ludger

2018-01-01

Long-period fiber gratings (LPGs) are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge)-doped fused silica fiber cores) are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application. PMID:29702600

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

Directory of Open Access Journals (Sweden)

Sebastian Schlangen

2018-04-01

Full Text Available Long-period fiber gratings (LPGs are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge-doped fused silica fiber cores are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application.

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum well

Czech Academy of Sciences Publication Activity Database

Mikhailova, M. P.; Ivanov, E.V.; Danilov, L.V.; Petukhov, A.A.; Kalinina, K.V.; Slobozhanyuk, S.I.; Zegrya, G.G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Zíková, Markéta; Hulicius, Eduard

2014-01-01

Roč. 115, č. 22 (2014), "223102-1"-"223102-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S Institutional support: RVO:68378271 Keywords : MOVPE * GaSb * InAs * electroluminescence * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

Science.gov (United States)

Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

2005-10-01

Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

Science.gov (United States)

Prasanyaa, T.; Haris, M.; Jayaramakrishnan, V.; Amgalan, M.; Mathivanan, V.

2013-10-01

Optically transparent Cu2+ and Cd2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet-visible-near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu2+ and Cd2+. The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu2+ doped LATF is 2.8 times greater and Cd2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

International Nuclear Information System (INIS)

Prasanyaa, T; Haris, M; Amgalan, M; Mathivanan, V; Jayaramakrishnan, V

2013-01-01

Optically transparent Cu 2+ and Cd 2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet–visible–near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu 2+ and Cd 2+ . The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu 2+ doped LATF is 2.8 times greater and Cd 2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus. (paper)

Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

International Nuclear Information System (INIS)

Ling, C. C.; Fung, S.; Beling, C. D.; Huimin, Weng

2001-01-01

Defects in p-type Zn-doped liquid-encapsulated Czochralski--grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral V Ga -related defect. Its concentration in the as-grown sample was found to be in the range of 10 17 --10 18 cm -3 . At an annealing temperature of 300 o C, the V Ga -related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy--Zn-defect complex. This defect started annealing out at a temperature of 580 o C. A positron shallow trap having binding energy and concentration of 75 meV and 10 18 cm -3 , respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn

Energy transfer and 2.0 μm emission in Tm{sup 3+}/Ho{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang; Yang, Shuo [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Wang, Cheng; Jiang, Dongsheng; Zhang, Jian; Gu, Xuemei; Zhang, Yuepin [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Chen, Baojiu, E-mail: bjchen@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province 116026 (China); Jiang, Haochuan [Ningbo Institute of Materials Technology and Engineering, the Chinese Academy of Sciences, Ningbo, Zhejiang 315211 (China)

2016-04-15

Highlights: • Cubic NaYF{sub 4} single crystals co-doped with ∼1.90 mol% Tm{sup 3+} and various Ho{sup 3+} concentrations were grown by Bridgman method. • The maximum fluorescence lifetime was 23.23 ms for Tm{sup 3+} (1.90 mol%)/Ho{sup 3+} (3.89 mol%) co-doped α-NaYF{sub 4}. • The obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) of Tm{sup 3+}:{sup 3}F{sub 4} are 1077 s{sup −1} and 95.0%, respectively. • The maximum emission cross section reached 1.06 × 10{sup −20} cm{sup 2}. - Abstract: Cubic NaYF{sub 4} single crystals co-doped with ∼1.90 mol% Tm{sup 3+} and various Ho{sup 3+} concentrations were grown by Bridgman method. The energy transfer from Tm{sup 3+} to Ho{sup 3+} and the optimum fluorescence emission around 2.04 μm of Ho{sup 3+} ion were investigated based on the measured absorption spectra, emission spectra, emission cross section and decay curves under excitation of 800 nm LD. The emission intensity at 2.04 μm increased with the increase of Ho{sup 3+} concentration from 0.96 mol% to 3.89 mol% when the concentration of Tm{sup 3+} was held constantly at ∼1.90 mol%. Moreover, the maximum emission cross section reached 1.06 × 10{sup −20} cm{sup 2} and the maximum fluorescence lifetime was 23.23 ms for Tm{sup 3+}(1.90 mol%)/Ho{sup 3+}(3.89 mol%) co-doped one. According to the measured lifetime of Tm{sup 3+} single-doped and Tm{sup 3+}/Ho{sup 3+} co-doped samples, the maximum energy transfer efficiency of Tm{sup 3+}:{sup 3}F{sub 4} level was 95.0%. Analysis on the fluorescence dynamics indicated that electric dipole–dipole is dominant for the energy transfer from Tm{sup 3+} to Ho{sup 3+}.

Pyroelectric properties of phosphoric acid-doped TGS single crystals

International Nuclear Information System (INIS)

Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K

2003-01-01

Pyroelectric properties of phosphoric acid (H 3 PO 4 )-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H 3 PO 4 have been studied. Incorporation of H 3 PO 4 into the crystal lattice is found to induce an internal bias field (E b ) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient (λ), dielectric constant (ε') and polarization (P). A high E b value in the range 9 x 10 3 -15.5 x 10 4 V m -1 is obtained for crystals grown with 0.1-0.5 mol of H 3 PO 4 in the solution, and a specific concentration of 0.2-0.25 mol of H 3 PO 4 in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F d = 428 μC m -2 K -1

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Science.gov (United States)

El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

2018-02-01

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F3 single crystals

International Nuclear Information System (INIS)

Kamada, Kei; Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira; Nikl, Martin

2011-01-01

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd 0.5 Y 0.5 F 3 single crystals were grown by the μ-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce 3+ -perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce 3+ → (Gd 3+ ) n → the perturbed Ce 3+ sites was evidenced through observation of decay time shortening of the regular Ce 3+ and Gd 3+ centers and the change between the Gd 3+ and Ce 3+ -perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd 0.5 Y 0.5 F 3 sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Neutron transmutation doped Ge bolometers

Science.gov (United States)

Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

1983-01-01

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Potassium-doped n-type bilayer graphene

Science.gov (United States)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

International Nuclear Information System (INIS)

Yokota, Yuui; Yanagida, Takayuki; Fujimoto, Yutaka; Nikl, Martin; Yoshikawa, Akira

2010-01-01

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce 3+ ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce 3+ 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Designed Er(3+)-singly doped NaYF4 with double excitation bands for simultaneous deep macroscopic and microscopic upconverting bioimaging.

Science.gov (United States)

Wen, Xuanyuan; Wang, Baoju; Wu, Ruitao; Li, Nana; He, Sailing; Zhan, Qiuqiang

2016-06-01

Simultaneous deep macroscopic imaging and microscopic imaging is in urgent demand, but is challenging to achieve experimentally due to the lack of proper fluorescent probes. Herein, we have designed and successfully synthesized simplex Er(3+)-doped upconversion nanoparticles (UCNPs) with double excitation bands for simultaneous deep macroscopic and microscopic imaging. The material structure and the excitation wavelength of Er(3+)-singly doped UCNPs were further optimized to enhance the upconversion emission efficiency. After optimization, we found that NaYF4:30%Er(3+)@NaYF4:2%Er(3+) could simultaneously achieve efficient two-photon excitation (2PE) macroscopic tissue imaging and three-photon excitation (3PE) deep microscopic when excited by 808 nm continuous wave (CW) and 1480 nm CW lasers, respectively. In vitro cell imaging and in vivo imaging have also been implemented to demonstrate the feasibility and potential of the proposed simplex Er(3+)-doped UCNPs as bioprobe.

Co-doping effects on luminescence and scintillation properties of Ce doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-01-01

The Mg, Ca, Sr and Ba 200 ppm co-doped Ce:Lu 3 Al 5 O 12 single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of the co-doping. The scintillation decays were accelerated by both Mg and Ca co-dopants. The Mg co-doped samples showed the fastest decay and the highest light yield among the co-doped samples

Impacts of Co-doping on the superconductivity and the orbital ordering state in Fe1-xCoxSe single crystal studied by the electrical transport.

Science.gov (United States)

Urata, Takahiro; Tanabe, Yoichi; Heguri, Satoshi; Tanigaki, Katsumi

2015-03-01

In the FeSe with the simplest crystal structure in the Fe-based superconductor families, although both the superconductivity and the orbital ordering states are investigated, the relation between them is still unclear. Here, we report Co doping effects on the superconductivity and the orbital ordering state in Fe1-xCoxSe single crystals. The electrical transport measurements demonstrated that the superconductivity vanishes at 4 % Co doping while the orbital ordering state may be robust against Co doping. Present results suggest that the orbital ordering state is not related to the emergence of the superconductivity in FeSe.

Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

Directory of Open Access Journals (Sweden)

Hui Wang

2018-02-01

Full Text Available High-quality Ta-doped La2Ti2O7 (Ta-LTO single crystal of about 40 mm in length and 5 mm in diameter was successfully prepared by the optical floating zone method. An X-ray rocking curve reveals that the crystal of LTO has excellent crystalline quality. As-grown crystals were transparent after annealing in air and the transmittance is up to 76% in the visible and near-infrared region. X-ray diffraction showed that this compound possessed a monoclinic structure with P21 space group. The dielectric properties were investigated as functions of temperature (0~300 °C and frequency (102 Hz~105 Hz. Dielectric spectra indicated an increase in the room-temperature dielectric constant accompanied by a drop in the loss tangent as a result of the Ta doping. One relaxation was observed in the spectra of electric modulus, which was ascribed to be related to the oxygen vacancy. The dielectric relaxation with activation energy of 1.16 eV is found to be the polaron hopping caused by the oxygen vacancies.

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

Energy Technology Data Exchange (ETDEWEB)

Yokota, Yuui, E-mail: y-yokota@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Nikl, Martin [Institute of Physics, Academy of Sciences of the Czech Republic/6253, Prague (Czech Republic); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan)

2010-03-15

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce{sup 3+} ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce{sup 3+} 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

First-principle study of SO{sub 2} molecule adsorption on Ni-doped vacancy-defected single-walled (8,0) carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Li, Wei; Lu, Xiao-Min; Li, Guo-Qing; Ma, Juan-Juan; Zeng, Peng-Yu; Chen, Jun-Fang; Pan, Zhong-Liang; He, Qing-Yu

2016-02-28

Graphical abstract: These two figures reflect the orbital bonding between SO{sub 2} molecule and the SV-2-CNT and Ni-SV-2-CNT. Which indicated the feasibility of making the sensors for SO{sub 2} molecule detecting with introducing vacancies, Ni atoms or combination of them. - Highlights: • The paper reports the effects of vacancy and Ni doping vacancy on CNT adsorbing SO{sub 2}. • Vacancies and Ni doping vacancies both can improve the sensitivity of CNT to SO{sub 2}. • Vacancies and Ni-doped vacancies CNTs are candidate material for SO{sub 2} detecting. - Abstract: To explore the possible way of detecting the poisonous gas SO{sub 2}, we have investigated the interactions between SO{sub 2} molecule and modified (8,0) single-walled carbon nanotubes by using the density functional theory (DFT) method. The adsorption energies, interaction distances, changes of geometric and electronic structures were all analyzed to investigate the sensitivity of variety of models of CNTs with Ni doping, vacancies, and a combination of them toward SO{sub 2} molecule. From our investigations, we found that SO{sub 2} molecule was more likely to be absorbed on vacancy-defected CNTs with relatively higher adsorption energy and shorter binding distance compared with the perfect CNTs. In addition, after doping Ni atom on the vacancies, the modified CNTs which were not very much sensitivity to SO{sub 2} molecule could become much sensitivity to it. In other words, the number of sensitive adsorption sites increased. The partial density of states (PDOS) and the electron concentration of the adsorption systems suggested the strong electrons interaction between SO{sub 2} molecule and defected or Ni-doped defected CNTs. Therefore the vacancies and Ni-doped vacancies CNTs had the potential capacities to make the sensors for SO{sub 2} molecule detecting.

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

International Nuclear Information System (INIS)

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude

2009-01-01

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. (semiconductor materials)

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

Energy Technology Data Exchange (ETDEWEB)

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude, E-mail: xfchen@semi.ac.c, E-mail: nfchen@semi.ac.c [Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2009-08-15

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. (semiconductor materials)

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-09-01

In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We observed a large blue shift of the photoluminescence peak emission energy and significant increases in the radiative recombination rate for the quantum well structures that incorporated Si-doped prelayers. Simulations of the variation of the conduction and valence band energies show that a strong modification of the band profile occurs for the quantum wells on Si-doped prelayers due to an increase in strength of the surface polarization field. The enhanced surface polarization field opposes the built-in field across the quantum well and thus reduces this built-in electric field. This reduction of the electric field across the quantum well reduces the Quantum Confined Stark Effect and is responsible for the observed blue shift and the change in the recombination dynamics.

Pyroelectric properties of phosphoric acid-doped TGS single crystals

Energy Technology Data Exchange (ETDEWEB)

Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2003-12-21

Pyroelectric properties of phosphoric acid (H{sub 3}PO{sub 4})-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H{sub 3}PO{sub 4} have been studied. Incorporation of H{sub 3}PO{sub 4} into the crystal lattice is found to induce an internal bias field (E{sub b}) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient ({lambda}), dielectric constant ({epsilon}') and polarization (P). A high E{sub b} value in the range 9 x 10{sup 3}-15.5 x 10{sup 4} V m{sup -1} is obtained for crystals grown with 0.1-0.5 mol of H{sub 3}PO{sub 4} in the solution, and a specific concentration of 0.2-0.25 mol of H{sub 3}PO{sub 4} in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F{sub d} = 428 {mu}C m{sup -2} K{sup -1}.

Growth and luminescent properties of Li2B4O7 single crystal doped with Cu

International Nuclear Information System (INIS)

Bui The Huy; Bui Minh Ly; Vu Xuan Quang; Huynh Ky Hanh; Doan Phan Thao Tien; Vinh Hao; Tran Ngoc

2009-01-01

The authors have primarily succeeded in the study of the technology for growing single crystal Li 2 B 4 O 7 doped with Cu ions by Bridgman technique. The TL-3D spectra show peaks at around 375 nm (3d 9 4s → 3d 10 radiative excitation transition). This success opened up an opportunity in the radiotherapy to manufacture scintillators for neutron detection. The kinetic parameters of thermal stimulation luminescence were investigated by the three point method.

Photocatalytic characteristics of single phase Fe-doped anatase TiO{sub 2} nanoparticles sensitized with vitamin B{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Gharagozlou, Mehrnaz, E-mail: gharagozlou@icrc.ac.ir [Department of Nanomaterials and Nanotechnology, Institute for Color Science and Technology, Tehran (Iran, Islamic Republic of); Bayati, R. [Intel Corporation, IMO-SC, SC2, Santa Clara, CA 95054 (United States)

2015-01-15

Highlights: • Anatase TiO{sub 2}/B{sub 12} hybrid nanostructured catalyst was successfully synthesized by sol–gel technique. • The nanoparticle catalyst was doped with iron at several concentrations. • Nanoparticles were characterized in detail by XRD, Raman, TEM, EDS, and spectroscopy techniques. • The formation mechanism and role of point defects on photocatalytic properties were discussed. • A structure-property-processing correlation was established. - Abstract: We report a processing-structure-property correlation in B{sub 12}-anatase titania hybrid catalysts doped with several concentrations of iron. Our results clearly show that low-level iron doping alters structure, defect content, and photocatalytic characteristics of TiO{sub 2}. XRD and Raman studies revealed formation of a single-phase anatase TiO{sub 2} where no iron based segregation in particular iron oxide, was detected. FT-IR spectra clearly confirmed sensitization of TiO{sub 2} nanoparticles with vitamin B{sub 12}. TEM micrographs and diffraction patterns confirmed crystallization of anatase nanoparticles with a radius of 15–20 nm. Both XRD and Raman signals showed a peak shift and a peak broadening which are surmised to originate from creation of point defects, namely oxygen vacancy and titanium interstitial. The doped samples revealed a narrower band gap as compared to undoped samples. Photocatalytic activity of the samples was assessed through measuring the decomposition rate of rhodamine B. It was found that sensitization with vitamin B{sub 12} and Fe-doping significantly enhances the photocatalytic efficiency of the anatase nanoparticles. We also showed that there is an optimum Fe-doping level where the maximum photocatalytic activity is achieved. The boost of photocatalytic activity was qualitatively understood to originate from a more effective use of the light photons, formation of point defects, which enhance the charge separation, higher carrier mobility.

Synthesis of silver doped hydroxyapatite nanospheres using Ouzo effect

Directory of Open Access Journals (Sweden)

Marija Prekajski

2016-09-01

Full Text Available Nanoemulsion technique, based on Ouzo effect, was applied for synthesis of the pure and silver doped (2.5 and 5 mol% calcium hydroxyapatite (HAp. After calcination at 500 °C fully crystallized powders were obtained. X-ray powder diffraction analysis accompanied with Rietveld refinement revealed that the synthesized powders were single-phase hydroxyapatite. Raman spectroscopy also confirmed that the synthesized powders were single-phase. The obtained HAp particles were spherical in shape and their sizes were in the nanometer range which was revealed by field emission scanning electron microscopy analysis (FESEM. The successful synthesis of the single-phase Ag doped HAp showed that nanoemulsion method is a simple technique for obtaining pure and doped hydroxyapatite nanospheres.

Growth and properties of oxygen doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Kapitulnik, A.; Mitzi, D.B.

1990-01-01

This paper reports results on oxygen doped single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system grown by a directional solidification method. Annealing of as made crystals in increasing partial pressure of oxygen reversibly depresses the superconducting transition temperature from 90K (as made) to 77K (oxygen pressure annealed). Magnetic and photoemission properties of these crystals will be discussed

Neutron transmutation doping of polycrystalline silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

1976-04-01

Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

Ultranarrow and widely tunable Mn2+-Induced photoluminescence from single Mn-doped nanocrystals of ZnS-CdS alloys.

Science.gov (United States)

Hazarika, Abhijit; Layek, Arunasish; De, Suman; Nag, Angshuman; Debnath, Saikat; Mahadevan, Priya; Chowdhury, Arindam; Sarma, D D

2013-06-28

Extensively studied Mn-doped semiconductor nanocrystals have invariably exhibited photoluminescence over a narrow energy window of width ≤150  meV in the orange-red region and a surprisingly large spectral width (≥180  meV), contrary to its presumed atomic-like origin. Carrying out emission measurements on individual single nanocrystals and supported by ab initio calculations, we show that Mn PL emission, in fact, can (i) vary over a much wider range (∼370  meV) covering the deep green--deep red region and (ii) exhibit widths substantially lower (∼60-75  meV) than reported so far, opening newer application possibilities and requiring a fundamental shift in our perception of the emission from Mn-doped semiconductor nanocrystals.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Science.gov (United States)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Single mode solid state distributed feedback dye laser fabricated by grey scale electron beam lithography on dye doped SU-8 resist

DEFF Research Database (Denmark)

Balslev, Søren; Rasmussen, Torben; Shi, Peixiong

2005-01-01

We demonstrate grey scale electron beam lithography on functionalized SU-8 resist for fabrication of single mode solid state dye laser devices. The resist is doped with Rhodamine 6G perchlorate and the lasers are based on a first order Bragg grating distributed feedback resonator. The lasers...

Optical spectroscopy of iodine-doped single-wall carbon nanotubes of different diameter

International Nuclear Information System (INIS)

Tonkikh, Alexander A.; Obraztsova, Elena D.; Pozharov, Anatolii S.; Obraztsova, Ekaterina A.; Belkin, Alexey V.

2012-01-01

Single-wall carbon nanotubes with polyiodide chains inside are interesting from two points of view. According to predictions, first, the iodine structure type inside the nanotube is determined by the nanotube geometry. Second, after iodination all nanotubes become metallic. In this work, we made an attempt to check both predictions. To study the diameter-dependent properties we have taken for a gas-phase iodination the pristine single-wall carbon nanotubes grown by three different techniques providing a different average diameter: a chemical vapor deposition with a Co/Mo catalyst (CoMoCat) with a diameter range (0.6-1.3) nm, a high-pressure CO decomposition (HiPCO) - a diameter range (0.8-1.5) nm, and an aerosol technique with Fe catalyst - a diameter range (1.3-2.0) nm. The Raman spectra have shown a complication of the polyiodide chain structure while the nanotube diameter increased. The optical spectroscopy data (a suppression of E 11 band in the UV-Vis-NIR absorption spectrum) have confirmed the theoretical prediction about transformation of all nanotubes into metallic phase after doping. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

Science.gov (United States)

Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

2018-06-01

In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

Improving the electrical properties of graphene layers by chemical doping

International Nuclear Information System (INIS)

Khan, Muhammad Farooq; Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Eom, Jonghwa

2014-01-01

Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO 3 ) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO 3 . The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO 3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics. (paper)

The sensing mechanism of N-doped SWCNTs toward SF6 decomposition products: A first-principle study

Science.gov (United States)

Gui, Yingang; Tang, Chao; Zhou, Qu; Xu, Lingna; Zhao, Zhongyong; Zhang, Xiaoxing

2018-05-01

In order to monitor the insulation status of SF6-insulated equipment on-line, SOF2 and SO2F2, two typical decomposition products of SF6 under electric discharge condition, are chosen as the target gases to evaluate the type and severity of discharge. In this work, single N atom doping method is adopted to improve the gas sensitivity of single wall carbon nanotubes to SOF2 and SO2F2. Single and double gas molecules adsorptions are considered to completely analyze the adsorption properties of N-doped single wall carbon nanotubes. Calculation results show that N atom doping enhances the surface activity of carbon nanotubes. When gas molecules physically adsorbed on N-doped single wall carbon nanotubes, the weak interaction between gas molecules and N-doped single wall carbon nanotubes nearly not changes the electrical property according to analysis of the density of states and molecular orbitals. While the chemisorption between gas molecules and N-doped single wall carbon nanotubes distinctly decreases the conductivity of adsorption system.

Unusually high critical current of P-doped BaFe{sub 2}As{sub 2} single crystalline thin film

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz; Engelmann, Jan; Schultz, Ludwig [IMW, IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Tarantini, Chiara; Jaroszynski, Jan [ASC, NHMFL, Florida (United States); Grinenko, Vadim; Reich, Elke; Huehne, Ruben [IMW, IFW Dresden, Dresden (Germany); Haenisch, Jens [IMW, IFW Dresden, Dresden (Germany); ITEP, KIT, Karlsruhe (Germany); Mori, Yasohiro; Sakagami, Akihiro; Kawaguchi, Takahiko; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan); Holzapfel, Bernhard [ITEP, KIT, Karlsruhe (Germany); Iida, Kazumasa [IMW, IFW Dresden, Dresden (Germany); Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan)

2015-07-01

Microstructurally clean, isovalently P-doped BaFe{sub 2}As{sub 2} single crystalline thin films have been prepared by molecular beam epitaxy. These films show a superconducting transition temperature (T{sub c}) of over 30 K and high transport self-field critical current densities (J{sub c}) of over 6 MA/cm{sup 2} at 4.2 K, which are among the highest for Fe based superconductors. In-field J{sub c} exceeds 0.1 MA/cm{sup 2} at μ{sub 0}H = 35 T for H parallel ab and μ{sub 0}H = 18 T for H parallel c, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar T{sub c}. This unusually high J{sub c} makes P-doped Ba-122 very favorable for high-field magnet applications.

Room temperature ferromagnetism in Mn-doped NiO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Layek, Samar, E-mail: samarlayek@gmail.com; Verma, H.C.

2016-01-01

Mn-doped NiO nanoparticles of the series Ni{sub 1−x}Mn{sub x}O (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum. - Highlights: • Mn-doped NiO nanoparticles are prepared by a simple hydrothermal method. • Unit cell volume decreases with increasing doping concentration. • Mn-doping leads to room temperature ferromagnetism in NiO nanoparticles. • Magnetization is highest for 2% Mn-doping. • Above 2%, magnetization decreases with increasing doping.

Room temperature ferromagnetism in Mn-doped NiO nanoparticles

International Nuclear Information System (INIS)

Layek, Samar; Verma, H.C.

2016-01-01

Mn-doped NiO nanoparticles of the series Ni_1_−_xMn_xO (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum. - Highlights: • Mn-doped NiO nanoparticles are prepared by a simple hydrothermal method. • Unit cell volume decreases with increasing doping concentration. • Mn-doping leads to room temperature ferromagnetism in NiO nanoparticles. • Magnetization is highest for 2% Mn-doping. • Above 2%, magnetization decreases with increasing doping.

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

International Nuclear Information System (INIS)

Ungan, F.

2011-01-01

In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schroedinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al x Ga 1-x As are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures. - Highlights: → The doping concentration has a great effect on the optical characteristics of these structures. → The structure parameters have a great effect on the optical properties of these structures. → The total absorption coefficients reduced as the incident optical intensity increases. → The RICs reduced as the incident optical intensity increases.

Spin properties of charged Mn-doped quantum dota)

Science.gov (United States)

Besombes, L.; Léger, Y.; Maingault, L.; Mariette, H.

2007-04-01

The optical properties of individual quantum dots doped with a single Mn atom and charged with a single carrier are analyzed. The emission of the neutral, negatively and positively charged excitons coupled with a single magnetic atom (Mn) are observed in the same individual quantum dot. The spectrum of the charged excitons in interaction with the Mn atom shows a rich pattern attributed to a strong anisotropy of the hole-Mn exchange interaction slightly perturbed by a small valence-band mixing. The anisotropy in the exchange interaction between a single magnetic atom and a single hole is revealed by comparing the emission of a charged Mn-doped quantum dot in longitudinal and transverse magnetic field.

Room temperature ferromagnetism in Mn-doped NiO nanoparticles

Science.gov (United States)

Layek, Samar; Verma, H. C.

2016-01-01

Mn-doped NiO nanoparticles of the series Ni1-xMnxO (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum.

Spectroscopic study of the diameter distribution of B-doped single-walled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Ruiz-Soria, G.; Pichler, T.; Ayala, P. [University of Vienna, Faculty of Physics, 1090 Vienna (Austria); Daothong, S. [Chiang Mai University, Faculty of Science, 50200 Chiang Mai (Thailand)

2012-12-15

In this paper, we report on the diameter distribution of boron-doped single-walled carbon nanotubes grown from triethyl borate with high vacuum chemical vapor deposition, using multi-frequency Raman resonance spectroscopy. The nanotube yield is higher than in previously reported material produced with the same method. Our results suggest that the amount of as-grown material and the range of diameters are directly correlated with feedstock used in the synthesis. The I{sub D}/I{sub G} ratio shows that the morphology of the samples is critically affected by the temperature. The population of diameters in the optimal conditions shows a Poisson distribution with a mean value at {proportional_to}1.15 nm. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Correlation between modulation structure and electronic inhomogeneity on Pb-doped Bi-2212 single crystals

International Nuclear Information System (INIS)

Sugimoto, A.; Kashiwaya, S.; Eisaki, H.; Yamaguchi, H.; Oka, K.; Kashiwaya, H.; Tsuchiura, H.; Tanaka, Y.

2005-01-01

The correlation between nanometer-size electronic states and surface structure is investigated by scanning tunneling microscopy/spectroscopy (STM/S) on Pb-doped Bi 2-x Pb x Sr 2 CaCu2O 8+y (Pb-Bi-2212) single crystals. The advantage of the Pb-Bi-2212 samples is that the modulation structure can be totally or locally suppressed depending on the Pb contents and annealing conditions. The superconducting gap (Δ) distribution on modulated Pb-Bi-2212 samples showed the lack of correlation with modulation structure except a slight reduction of superconducting island size for the b-axis direction. On the other hand, the optimal doped Pb-Bi-2212 (x = 0.6) samples obtained by reduced-annealing showed totally non-modulated structure in topography, however, the spatial distribution of Δ still showed inhomogeneity of which features were quite similar to those of modulated samples. These results suggest that the modulation structure is not the dominant origin of inhomogeneity although it modifies the streaky Δ structure sub-dominantly. From the gap structure variation around the border of narrow gap and broad gap regions, a trend of the coexistence of two separated phases i.e., superconducting phase and pseudogap like phase, is detected

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Energy Technology Data Exchange (ETDEWEB)

Craig, A. P.; Percy, B.; Marshall, A. R. J. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Jain, M. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Wicks, G.; Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Golding, T. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); McEwan, K.; Howle, C. [Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)

2015-05-18

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

International Nuclear Information System (INIS)

Gong, Maogao; Xiang, Weidong; Liang, Xiaojuan; Zhong, Jiasong; Chen, Daqin; Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run

2015-01-01

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y 3 Al 5 O 12 single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Gong, Maogao [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Liang, Xiaojuan [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Zhong, Jiasong; Chen, Daqin [College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

2015-08-05

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y{sub 3}Al{sub 5}O{sub 12} single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.

Yb-doped rod-type photonic crystal fibers for single-mode amplification

DEFF Research Database (Denmark)

Poli, Frederica; Passaro, Davide; Cucinotta, Annamaria

2009-01-01

The competition among the guided modes in rod-type photonic crystal fibers with a low refractive index ring in the Yb-doped core is investigated with an amplifier model to demonstrate the effective higher-order mode suppression.......The competition among the guided modes in rod-type photonic crystal fibers with a low refractive index ring in the Yb-doped core is investigated with an amplifier model to demonstrate the effective higher-order mode suppression....

75 W 40% efficiency single-mode all-fiber erbium-doped laser cladding pumped at 976 nm.

Science.gov (United States)

Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Yashkov, M V; Guryanov, A N; Lhermite, J; Février, S; Cormier, E

2013-07-01

Optimization of Yb-free Er-doped fiber for lasers and amplifiers cladding pumped at 976 nm was performed in this Letter. The single-mode fiber design includes an increased core diameter of 34 μm and properly chosen erbium and co-dopant concentrations. We demonstrate an all-fiber high power laser and power amplifier based on this fiber with the record slope efficiency of 40%. To the best of our knowledge, the achieved output power of 75 W is the highest power reported for such lasers.

Crystal growth and scintillation properties of Er-doped Lu3Al5O12 single crystals

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira

2012-01-01

Er-doped Lu 3 Al 5 O 12 (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down (μ-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under 241 Am α-ray excitation indicated host emission at approximately 350 nm and Er 3+ 4f-4f emissions. According to the pulse height spectra recorded under γ-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The γ-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 μs and 6-10 μs).

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Kamada, Kei, E-mail: k-kamada@furukawakk.co.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Furukawa Co. Ltd. (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai (Japan); Nikl, Martin [Institute of Physics AS CR (Czech Republic)

2011-12-11

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} single crystals were grown by the {mu}-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce{sup 3+}-perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce{sup 3+}{yields} (Gd{sup 3+}){sub n}{yields} the perturbed Ce{sup 3+} sites was evidenced through observation of decay time shortening of the regular Ce{sup 3+} and Gd{sup 3+} centers and the change between the Gd{sup 3+} and Ce{sup 3+}-perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Highly sensitive formaldehyde resistive sensor based on a single Er-doped SnO_2 nanobelt

International Nuclear Information System (INIS)

Li, Shuanghui; Liu, Yingkai; Wu, Yuemei; Chen, Weiwu; Qin, Zhaojun; Gong, Nailiang; Yu, Dapeng

2016-01-01

SnO_2 nanobelts (SnO_2 NBs) and Er"3"+-doped SnO_2 nanobelts (Er–SnO_2 NBs) were synthesized by thermal evaporation. The obtained samples were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersion spectrometer (EDS), and X-ray photoelectron spectrometer (XPS). It is found that Er–SnO_2 NBs have a good morphology with smooth surface and their thickness are about 30 nm, widths between 200 nm and 600 nm, and lengths 30–80 mm. The nanobelts with good morphology were taken to develop sensors based on a single Er–SnO_2 NB/SnO_2 NB for studying sensitive properties. The results reveal that the response of a single Er–SnO_2 nanobelt device is 9 to the formaldehyde gas with a shorter response (recovery time) of 17 (25) s.

Doping dependence of charge order in electron-doped cuprate superconductors

Science.gov (United States)

Mou, Yingping; Feng, Shiping

2017-12-01

In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

DFT study of Al doped armchair SWCNTs

Energy Technology Data Exchange (ETDEWEB)

Dhiman, Shobhna, E-mail: s-dhiman@hotmail.com [Department of Applied Science, PEC, University of Technology, Chandigarh -160012 (India); Rani, Anita [Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab-152026 (India); Kumar, Ranjan; Dharamvir, Keya [Department of Physics, Panjab University, Chandigarh-160014 (India)

2016-05-23

Electronic properties of endohedrally doped armchair single-walled carbon nanotubes (SWCNTs) with a chain of six Al atoms have been studied using ab-initio density functional theory. We investigate the binding energy/atom, ionization potential, electron Affinity and Homo-Lumo gap of doped armchair SWNTs from (4,4) to (6,6) with two ends open. BE/dopant atom and ionization potential is maximum for (6, 6) doped armchair carbon nanotube; suggest that it is more stable than (4, 4) and (5, 5) doped tubes. HOMO - LUMO gap of Al doped arm chair carbon nanotubes decreases linearly with the increase in diameter of the tube. This shows that confinement induce a strong effect on electronic properties of doped tubes. These combined systems can be used for future nano electronics. The ab–initio calculations were performed with SIESTA code using generalized gradient approximation (GGA).

Growth and luminescence properties of Pr3+-doped single crystalline films of garnets and perovskites

International Nuclear Information System (INIS)

Gorbenko, V.; Zorenko, Yu.; Savchyn, V.; Zorenko, T.; Pedan, A.; Shkliarskyi, V.

2010-01-01

Peculiarities of growth of single crystalline films (SCF) of Pr 3+ doped Y 3 Al 5 O 12 and Lu 3 Al 5 O 12 garnets and YAlO 3 and LuAlO 3 perovskites by the liquid phase epitaxy method from melt-solutions based on PbO-B 2 O 3 flux as well as luminescent and scintillation properties of these SCFs were studied in this work. Dependence the intensity of the Pr 3+ d-f and f-f-luminescence on the activator concentration and influence of Pb 2+ flux dopant on the light yield of SCFs of the mentioned garnets and perovskites were analyzed.

High multi-photon visible upconversion emissions of Er3+ singly doped BiOCl microcrystals: A photon avalanche of Er3+ induced by 980 nm excitation

International Nuclear Information System (INIS)

Li, Yongjin; Song, Zhiguo; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi

2013-01-01

Under 980 nm excitation, high multi-photon upconversion (UC) emission from the 2 H 11/2 / 4 S 3/2 (green) and 4 F 9/2 (red) levels of Er 3+ ions were observed from Er 3+ singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er 3+ ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er 3+ ions doping

Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

Energy Technology Data Exchange (ETDEWEB)

Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

2015-01-15

The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

Enhancement of single particle rare earth doped NaYF4: Yb, Er emission with a gold shell

International Nuclear Information System (INIS)

Li, Ling; Green, Kory; Hallen, Hans; Lim, Shuang Fang

2015-01-01

Upconversion of infrared light to visible light has important implications for bioimaging. However, the small absorption cross-section of rare earth dopants has limited the efficiency of these anti-Stokes nanomaterials. We present enhanced excitation absorption and single particle fluorescent emission of sodium yttrium fluoride, NaYF 4 : Yb, Er based upconverting nanoparticles coated with a gold nanoshell through surface plasmon resonance. The single gold-shell coated nanoparticles show enhanced absorption in the near infrared, enhanced total emission intensity, and increased green relative to red emission. We also show differences in enhancement between single and aggregated gold shell nanoparticles. The surface plasmon resonance of the gold-shell coated nanoparticle is shown to be dependent on the shell thickness. In contrast to other reported results, our single particle experimental observations are corroborated by finite element calculations that show where the green/red emission enhancement occurs, and what portion of the enhancement is due to electromagnetic effects. We find that the excitation enhancement and green/red emission ratio enhancement occurs at the corners and edges of the doped emissive core. (paper)

EPR and optical absorption studies of VO2+ doped L-alanine (C3H7NO2) single crystals

International Nuclear Information System (INIS)

Biyik, Recep

2009-01-01

VO 2+ doped L-alanine (C 3 H 7 NO 2 ) single crystals and powders are examined by electron paramagnetic resonance (EPR) and optical absorption spectroscopy. Three magnetically different sites are resolved from angular variations of L-alanine single crystal EPR spectra. In some specific orientations each VO 2+ line splits into three superhyperfine lines with intensities of 1:2:1 and maximum splitting value of 2.23 mT. The local symmetries of VO 2+ complex sites are nearly axial. The optical absorption spectra show three bands. Spin Hamiltonian parameters are measured and molecular orbital coefficients are calculated by correlating EPR and optical absorption data for the central vanadyl ion.

Coloration of chromium-doped yttrium aluminum garnet single-crystal fibers using a divalent codopant

International Nuclear Information System (INIS)

Tissue, B.M.; Jia, W.; Lu, L.; Yen, W.M.

1991-01-01

We have grown single-crystal fibers of Cr:YAG and Cr,Ca:YAG under oxidizing and reducing conditions by the laser-heated-pedestal-growth method. The Cr:YAG crystals were light green due to Cr 3+ in octahedral sites, while the Cr,Ca:YAG crystals were brown. The presence of the divalent codopant was the dominant factor determining the coloration in these single-crystal fibers, while the oxidizing power of the growth atmosphere had little effect on the coloration. The Cr,Ca:YAG had a broad absorption band centered at 1.03 μm and fluoresced from 1.1 to 1.7 μm, with a room-temperature lifetime of 3.5 μs. The presence of both chromium and a divalent codopant were necessary to create the optically-active center which produces the near-infrared emission. Doping with only Ca 2+ created a different coloration with absorption in the blue and ultraviolet. The coloration in the Cr,Ca:YAG is attributed to Cr 4+ and is produced in as-grown crystals without irradiation or annealing, as has been necessary in previous work

Single crystal growth of pure and Nd-doped Y2O3 by flotating zone method with Xe arc lamp imaging furnace

International Nuclear Information System (INIS)

Tsuiki, H.; Kitazawa, K.; Fueki, K.; Masumoto, T.; Shiroki, K.

1980-01-01

Single crystals of undoped and Nd-doped yttrium oxide were grown by the floating zone method with a Xe arc lamp imaging furnace. The crystals were grown in the and directions. Transparent and subgrain-free single crystals were obtained at a growth rate of 30-60 mm/h for the undoped yttrium oxide. Facets of the cubic [100] and [211] were observed though the high temperature phase of the crystal is hexagonal. Dislocation densities of undoped yttrium oxide are given. (orig./WE)

3 kW single stage all-fiber Yb-doped single-mode fiber laser for highly reflective and highly thermal conductive materials processing

Science.gov (United States)

Ikoma, S.; Nguyen, H. K.; Kashiwagi, M.; Uchiyama, K.; Shima, K.; Tanaka, D.

2017-02-01

A 3 kW single stage all-fiber Yb-doped single-mode fiber laser with bi-directional pumping configuration has been demonstrated. Our newly developed high-power LD modules are employed for a high available pump power of 4.9 kW. The length of the delivery fiber is 20 m which is long enough to be used in most of laser processing machines. An output power of 3 kW was achieved at a pump power of 4.23 kW. The slope efficiency was 70%. SRS was able to be suppressed at the same output power by increasing ratio of backward pump power. The SRS level was improved by 5dB when 57% backward pump ratio was adopted compared with the case of 50%. SRS was 35dB below the laser power at the output power of 3 kW even with a 20-m delivery fiber. The M-squared factor was 1.3. Single-mode beam quality was obtained. To evaluate practical utility of the 3 kW single-mode fiber laser, a Bead-on-Plate (BoP) test onto a pure copper plate was executed. The BoP test onto a copper plate was made without stopping or damaging the laser system. That indicates our high power single-mode fiber lasers can be used practically in processing of materials with high reflectivity and high thermal conductivity.

Stable single longitudinal mode erbium-doped silica fiber laser based on an asymmetric linear three-cavity structure

International Nuclear Information System (INIS)

Feng Ting; Yan Feng-Ping; Li Qi; Peng Wan-Jing; Feng Su-Chun; Tan Si-Yu; Wen Xiao-Dong

2013-01-01

We present a stable linear-cavity single longitudinal mode (SLM) erbium-doped silica fiber laser. It consists of four fiber Bragg gratings (FBGs) directly written in a section of photosensitive erbium-doped fiber (EDF) to form an asymmetric three-cavity structure. The stable SLM operation at a wavelength of 1545.112 nm with a 3-dB bandwidth of 0.012 nm and an optical signal-to-noise ratio (OSNR) of about 60 dB is verified experimentally. Under laboratory conditions, the performance of a power fluctuation of less than 0.05 dB observed from the power meter for 6 h and a wavelength variation of less than 0.01 nm obtained from the optical spectrum analyzer (OSA) for about 1.5 h are demonstrated. The gain fiber length is no longer limited to only several centimeters for SLM operation because of the excellent mode-selecting ability of the asymmetric three-cavity structure. The proposed scheme provides a simple and cost-effective approach to realizing a stable SLM fiber laser. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Optical excitations in CuO2-sheets doped and undoped with electrons

International Nuclear Information System (INIS)

Tokura, Y.; Arima, T.; Koshihara, S.; Takagi, H.; Ido, T.; Ishibashi, S.; Uchida, S.

1989-01-01

This paper reports optical reflectance spectra measured on single crystals of parent families of high T c copper oxide compounds with single-layered CuO 2 -sheets, which clearly show the strong transitons across the charge-transfer (CT) gaps at 1.5-2.0 eV in various types of CuO 2 -sheets. The carrier-doping effects on the CT excitations have been investigated on the Sr-doped La 2 CuO 4 and Ce-doped Nd 2 O 4 crystals

Dynamics of a Dispersion-Managed Passively Mode-Locked Er-Doped Fiber Laser Using Single Wall Carbon Nanotubes

Directory of Open Access Journals (Sweden)

Norihiko Nishizawa

2015-07-01

Full Text Available We investigated the dynamics of a dispersion-managed, passively mode-locked, ultrashort-pulse, Er-doped fiber laser using a single-wall carbon nanotube (SWNT device. A numerical model was constructed for analysis of the SWNT fiber laser. The initial process of passive mode-locking, the characteristics of the output pulse, and the dynamics inside the cavity were investigated numerically for soliton, dissipative-soliton, and stretched-pulse mode-locking conditions. The dependencies on the total dispersion and recovery time of the SWNTs were also examined. Numerical results showed similar behavior to experimental results.

Multi-component Ce doped (Gd,Y,La,Lu)3(AlGaSc)5O12 garnets – A new story in the development of scintillating single crystalline film screens

International Nuclear Information System (INIS)

Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Fedorov, A.; Wrzesinski, H.; Vasylkiv, Ya.

2013-01-01

The paper is dedicated to development of the scintillators based on single crystalline films of Ce doped (GdLaYLu) 3 (AlGaSc) 5 O 12 multi-component garnets onto Gd 3 Ga 5 O 12 substrates using the liquid phase epitaxy method. -- Highlights: •Growth of Ce doped (GdYLaLu) 3 (AlGaSc) 5 O 12 garnets films by LPE method. •Luminescent and scintillation properties of Ce doped (GdYLaLu) 3 (AlGaSc) 5 O 12 films. •Influence of Pb 2+ flux related impurity on the light yield of Ce 3+ emission

Crystal Growth and Spectroscopic characterization of chloride and bromide single crystals doped with rare earth ions for the mid infrared amplification

International Nuclear Information System (INIS)

Ferrier, A.

2007-12-01

This work is devoted to the study of low phonon energy crystals doped with rare earth ions for the realisation of diode-pumped solid state laser sources emitting in the middle infrared. For that purpose, pure and (Er 3+ or Pr 3+ ) doped single crystals of KPb 2 Cl 5 and Tl 3 PbX 5 (X=Cl, Br) have been elaborated by using the Bridgman-Stockbarger method. These non-hygroscopic and congruent melting materials have been found to exhibit phase transitions during the cooling process but which do not limit the elaboration of centimeter-size single crystals. The spectroscopic study of the Er 3+ doped compounds has been performed both at high and low temperatures. It thus appears that these systems present long fluorescence lifetimes and relatively large gain cross sections favorable for a laser emission around 4.5μm. It has been demonstrated further that the up-conversion processes resulting from excited-state absorptions of the Er 3+ ions around the pumping wavelength as well as the energy transfer processes between the Er 3+ ions do not lead to significant optical losses for the laser system. The derived parameters then have been used to build a model and simulate the laser operation of the system following diode pumping around 800 nm. In the end, the spectroscopic study of the Pr 3+ ion in various materials has allowed us to evidence large emission cross sections associated with long fluorescence lifetimes, now favorable to a laser emission around 5μm. (author)

Comparative study of Tm-doped and Tm-Sc co-doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Fujimoto, Yutaka

2014-01-01

The crystals of Tm doped and Tm-Sc co-doped Lu 3 Al 5 O 12 (LuAG) grown by the floating zone (FZ) method were examined for their optical and scintillation properties. In transmittance spectra, strong absorption lines due to Tm 3+ 4f–4f transitions were observed. X-ray excited radioluminescence spectra were measured and broad and sharp emission peaks were detected. The former one was attributed to Sc 3+ and the latter one was due to Tm 3+ 4f–4f transitions. Scintillation yield enhancement due to Sc co-doping was observed by means of 137 Cs pulse height spectra. Scintillation decay times were several tens of μs under pulse X-ray excitation. - Highlights: • LuAG:Tm and LuAG:Tm, Sc single crystals have been grown by the FZ method. • Tm 3+ 4f–4f absorption has been observed in transmittance spectra. • Scintillation yield of Tm-doped LuAG has been enhanced by Sc co-doping

First-principles calculations of the electronic and structural properties of GaSb

Energy Technology Data Exchange (ETDEWEB)

Castaño-González, E.-E. [Universidad del Norte, Grupo de Investigación en Física Aplicada, Departamento de Física (Colombia); Seña, N. [Universidad Nacional de Colombia-Colombia, Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones (Colombia); Mendoza-Estrada, V.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Universidad del Norte, Grupo de Investigación en Física Aplicada, Departamento de Física (Colombia); Dussan, A. [Universidad Nacional de Colombia-Colombia, Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Universidad del Rosario, Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas (Colombia)

2016-10-15

In this paper, we carried out first-principles calculations in order to investigate the structural and electronic properties of the binary compound gallium antimonide (GaSb). This theoretical study was carried out using the Density Functional Theory within the plane-wave pseudopotential method. The effects of exchange and correlation (XC) were treated using the functional Local Density Approximation (LDA), generalized gradient approximation (GGA): Perdew–Burke–Ernzerhof (PBE), Perdew-Burke-Ernzerhof revised for solids (PBEsol), Perdew-Wang91 (PW91), revised Perdew–Burke–Ernzerhof (rPBE), Armiento–Mattson 2005 (AM05) and meta-generalized gradient approximation (meta-GGA): Tao–Perdew–Staroverov–Scuseria (TPSS) and revised Tao–Perdew–Staroverov–Scuseria (RTPSS) and modified Becke-Johnson (MBJ). We calculated the densities of state (DOS) and band structure with different XC potentials identified and compared them with the theoretical and experimental results reported in the literature. It was discovered that functional: LDA, PBEsol, AM05 and RTPSS provide the best results to calculate the lattice parameters (a) and bulk modulus (B{sub 0}); while for the cohesive energy (E{sub coh}), functional: AM05, RTPSS and PW91 are closer to the values obtained experimentally. The MBJ, Rtpss and AM05 values found for the band gap energy is slightly underestimated with those values reported experimentally.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao

2017-04-12

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

2017-01-01

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Er –Al2O3 nanoparticles doping of borosilicate glass

Indian Academy of Sciences (India)

Administrator

for determining the optical properties.2 While in homoge- ... of RE-doped single crystals (higher absorption/emission ... nanoparticles doping on the thermal, optical, structural ... The density of the bulk glass materials was measured.

Effects of Na co-doping on optical and scintillation properties of Eu:LiCaAlF.sub.6./sub. scintillator single crystals

Czech Academy of Sciences Publication Activity Database

Tanaka, Ch.; Yokota, Y.; Kurosawa, S.; Yamaji, A.; Ohashi, Y.; Kamada, K.; Nikl, Martin; Yoshikawa, A.

2017-01-01

Roč. 468, Jun (2017), s. 399-402 ISSN 0022-0248 R&D Projects: GA MŠk(CZ) LH14266 Institutional support: RVO:68378271 Keywords : doping * single crystal growth * lithium compounds * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

International Nuclear Information System (INIS)

Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

2008-01-01

Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

Energy Technology Data Exchange (ETDEWEB)

Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2008-10-01

Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

EPR and optical absorption study of Cu{sup 2+} doped lithium sulphate monohydrate (LSMH) single crystals

Energy Technology Data Exchange (ETDEWEB)

Sheela, K. Juliet; Subramanian, P., E-mail: psubramaniangri@gmail.com [Department of Physics, Gandhigram Rural Institute-Deemed University, Gandhigram, Dindigul-624302, Tamilnadu (India); Krishnan, S. Radha; Shanmugam, V. M. [CSIR-Central Electrochemical Research Institute, Karaikudi-63006, Tamilnadu (India)

2016-05-23

EPR study of Cu{sup 2+} doped NLO active Lithium Sulphate monohydrate (Li{sub 2}SO{sub 4.}H{sub 2}O) single crystals were grown successfully by slow evaporation method at room temperature. The principal values of g and A tensors indicate existence of orthorhombic symmetry around the Cu{sup 2+} ion. From the direction cosines of g and A tensors, the locations of Cu{sup 2+} in the lattice have been identified as interstitial site. Optical absorption confirms the rhombic symmetry and ground state wave function of the Cu{sup 2+} ion in a lattice as d{sub x2-y2}.

Analysis of mechanical properties of N2in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

International Nuclear Information System (INIS)

Kim, Kang-San; Han, Ki-Bong; Chung, Gwiy-Sang

2010-01-01

This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N 2 in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 deg. C using single-precursor hexamethyildisilane: Si 2 (CH 3 ) 6 (HMDS) as Si and C precursors, and 0∼100 sccm N 2 as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N 2 , respectively. Young's modulus and hardness decreased with increasing N 2 flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N 2 flow rate.

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

Directory of Open Access Journals (Sweden)

Daniela Lehr

2015-11-01

Full Text Available Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides. Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+. Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides. A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl. We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

2-μm optical time domain reflectometry measurements from novel Al-, Ge-, CaAlSi- doped and standard single-mode fibers

Science.gov (United States)

Rodriguez-Novelo, J. C.; Sanchez-Nieves, J. A.; Sierra-Calderon, A.; Sanchez-Lara, R.; Alvarez-Chavez, J. A.

2017-08-01

The development of novel Al-, Ge- doped and un-doped standard single mode fibers for future optical communication at 2μm requires the integration of, among other pieces of equipment, an optical time domain reflectometry (OTDR) technique for precise spectral attenuation characterization, including the well-known cut-back method. The integration of a state of the art OTDR at 2μm could provide valuable attenuation information from the aforementioned novel fibers. The proposed setup consists of a 1.7 mW, 1960nm pump source, a 30 dB gain Thulium doped fibre amplifier at 2μm, an 0.8mm focal length lens with a 0.5 NA, a 30 MHz acusto-optic modulator, a 3.1 focal length lens with a 0.68NA, an optical circulator at 2μm, an InGaAs photodetector for 1.2 nm-2.6 nm range, a voltage amplifier and an oscilloscope. The propagated pulse rate is 50 KHz, with 500 ns, 200 ns, 100 ns and 50 ns pulse widths. Attenuation versus novel fibers types for lengths ranging from 400- to 1000- meter samples were obtained using the proposed setup.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

Energy Technology Data Exchange (ETDEWEB)

Mokuno, Yoshiaki, E-mail: mokuno-y@aist.go.jp; Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2014-06-23

A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

International Nuclear Information System (INIS)

Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

1992-01-01

The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

Structural, optical and magnetic characterization of Ru doped ZnO nanorods

International Nuclear Information System (INIS)

Kumar, Sanjeev; Kaur, Palvinder; Chen, C.L.; Thangavel, R.; Dong, C.L.; Ho, Y.K.; Lee, J.F.; Chan, T.S.; Chen, T.K.; Mok, B.H.; Rao, S.M.; Wu, M.K.

2014-01-01

Graphical abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice distortion. Highlights: • Ru doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). • PL and Raman studies show the formation of singly ionized oxygen vacancies in 2% Ru doped ZnO. • XAS reveals that Ru replace the Zn atoms in the host lattice with slightly lattice distortion. • Doping of Ru in ZnO nanostructures gives rise to RTFM ordering. -- Abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice

Fabrication and PL of Al-doped gallium nitride nanowires

International Nuclear Information System (INIS)

Zhou Shaomin

2006-01-01

Mass Al-doped GaN nanowires with an average diameter of about 50 nm and lengths up to several millimeters are fabricated by a CVD approach. The as-fabricated products have a single crystal phase and grow along the direction. The growth of Al-doped GaN nanowires is suggested for quasi-vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires, a novel strong ultraviolet PL spectrum (from 3.3 to 3.7 eV) appears with a doping Al where the Al-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail

Magic Doping Fractions in High-Temperature Superconductors

Energy Technology Data Exchange (ETDEWEB)

Komiya, Seiki; /CRIEPI, Tokyo; Chen, Han-Dong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.; Ando, Yoichi; /CRIEPI, Tokyo

2010-01-15

We report hole-doping dependence of the in-plane resistivity {rho}{sub ab} in a cuprate superconductor La{sub 2-x}Sr{sub x}CuO{sub 4}, carefully examined using a series of high-quality single crystals. Our detailed measurements find a tendency towards charge ordering at particular rational hole doping fractions of 1/16, 3/32, 1/8, and 3/16. This observation appears to suggest a specific form of charge order and is most consistent with the recent theoretical prediction of the checkerboard-type ordering of the Cooper pairs at rational doping fractions x = (2m + 1)/2{sup n}, with integers m and n.

Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

Science.gov (United States)

Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

2018-05-16

In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

Energy Technology Data Exchange (ETDEWEB)

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Effect of manganese doping on PIN-PMN-PT single crystals for high power applications

Science.gov (United States)

Sahul, Raffi

multitude of properties that are useful for various specified applications. The unique properties and configurations arise from the large anisotropy of the single crystalline materials and various polarization rotation mechanisms that are associated with these multi-domain configurations. This dissertation is focused on the properties of manganese doped PIN-PMN-PT ternary single crystals in the rhombohedral phase. By poling them in either [001]c, [011]c, or [111]c, 4R, 2R or 1R domain configuration can be achieved respectively. Longitudinal vibration mode, d 33, or k33 is the most useful mode from 4R configuration. The "2R" domain state is obtained by poling the rhombohedral phase crystal along [011]c crystallographic direction. Investigation of "2R" Mn:PIN-PMN-PT single crystals and their properties lead to unique resonance modes (d32, "2R d15", and d36') that are very useful and relevant to practical applications. Considering the large anisotropy and various symmetries exhibited by these crystals, full set of dielectric, piezoelectric, and elastic properties are extremely critical to understand different modes and their overall behavior in devices. Inconsistencies in full set of properties may be caused by complex methods involved in performing characterization measurements and also inhomogeneity among samples used for the measurements. Due to the large number of coefficients that need to be determined for full property material data, a methodology combining resonance and ultrasound methods is the most widely used technique for consistent measurement of full set properties for these materials. Full property measurements (elastic, dielectric, and piezoelectric) for the "2R" Mn:PIN-PMN-PT single crystal poled into orthorhombic mm2 macroscopic symmetry ([011]c poled crystals) and for "4R" configuration ([001]c poled crystals) were conducted and the data was analyzed based on their macroscopic crystallographic symmetry. Full property data was measured for the 1R configuration

High multi-photon visible upconversion emissions of Er{sup 3+} singly doped BiOCl microcrystals: A photon avalanche of Er{sup 3+} induced by 980 nm excitation

Energy Technology Data Exchange (ETDEWEB)

Li, Yongjin; Song, Zhiguo, E-mail: songzg@kmust.edu.cn; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2013-12-02

Under 980 nm excitation, high multi-photon upconversion (UC) emission from the {sup 2}H{sub 11/2}/{sup 4}S{sub 3/2} (green) and {sup 4}F{sub 9/2} (red) levels of Er{sup 3+} ions were observed from Er{sup 3+} singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er{sup 3+} ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er{sup 3+} ions doping.

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

2016-04-15

We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

The behaviour of doped elements in tungsten sintering

International Nuclear Information System (INIS)

Scheiner, L.

1975-01-01

The lecture deals with the occurrence of bubbles in the sintering of doped tungsten. The doping of tungsten normally takes place by the addition of K, Al and Si compounds. A part of the doping substances disappears with sintering which can easily be proved by chemical analyses. In the process described here, the evaporation is non-destructively observed during sintering with an absorption spectrometer. Temperature, absorption slope and sintering resistance are recorded. The evaluation of the absorption curves gives a diffusion equation. The discussion of the curves resulted so far in that a doped substance compound sets free the single elements of the compound at high temperature. Aluminium and silicon diffuse out. In the case of aluminium, the activation energy can be determined. (GSC/LH) [de

Long distance transmission through distributed erbium-doped fibers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Povlsen, Jørn Hedegaard; Bjarklev, Anders Overgaard

1993-01-01

High bit rate, all-optical long-distance transmission could be created through the combined use of loss-compensating gain in erbium-doped fibers and solitons. A detailed analysis of the distributed erbium-doped fiber, including the spectral-gain dependency, is combined with an optimum design...... of the transmission fiber and general bit-error-rate calculations. Changes in wavenumber, group velocity, and fiber dispersion due to erbium doping in a single-mode fiber are evaluated, and a reduction in bit-error rates due to the erbium spectral-gain profile is shown. Transmission through distributed erbium......-doped fiber with 100-km separation between each pump-power station is shown, with a total bit-rate distance product of 55 Gb/s · Mm...

Structural, Optical, and Electronic Characterization of Fe-Doped Alumina Nanoparticles

Science.gov (United States)

Heiba, Zein K.; Mohamed, Mohamed Bakr; Wahba, Adel Maher; Imam, N. G.

2018-01-01

The effects of iron doping on the structural, optical, and electronic properties of doped alumina have been studied. Single-phase iron-doped alumina Al2- x Fe x O3 ( x = 0.00 to 0.30) nanoparticles were synthesized via citrate-precursor method. Formation of single-phase hexagonal corundum structure with no other separate phases was demonstrated by x-ray diffraction (XRD) analysis and Fourier-transform infrared spectroscopy. The effects of iron doping on the α-Al2O3 structural parameters, viz. atomic coordinates, lattice parameters, crystallite size, and microstrain, were estimated from XRD data by applying the Rietveld profile fitting method. Transmission electron microscopy further confirmed the nanosize nature of the prepared samples with size ranging from 12 nm to 83 nm. The electronic band structure was investigated using density functional theory calculations to explain the decrease in the energy gap of Al2- x Fe x O3 as the amount of Fe was increased. The colored emission peaks in the visible region (blue, red, violet) of the electromagnetic spectrum obtained for the Fe-doped α-Al2O3 nanoparticles suggest their potential application as ceramic nanopigments.

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

Directory of Open Access Journals (Sweden)

Javier A. Barón-Miranda

2016-12-01

Full Text Available The local electrical response in alkaline-doped CuInSe2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe2 (CIS films were prepared from single baths containing the dopant ions (Li, Na, K or Cs and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li- and Na-doped films had larger conductivity than the undoped film while the K- and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the K- and Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

Guided mode gain competition in Yb-doped rod-type photonic crystal fibers

DEFF Research Database (Denmark)

Poli, Federica; Passaro, Davide; Cucinotta, Annamaria

2009-01-01

The gain competition among the guided modes in Yb-doped rod-type photonic crystal fibers with a low refractive index core is investigated with a spatial model to demonstrate the fiber effective single-mode behaviour.......The gain competition among the guided modes in Yb-doped rod-type photonic crystal fibers with a low refractive index core is investigated with a spatial model to demonstrate the fiber effective single-mode behaviour....

Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

Energy Technology Data Exchange (ETDEWEB)

Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori [Laser Research Center, Institute for Molecular Science, Okazaki, Aichi (Japan); Ikesue, Akio [Japan Fine Ceramics Center, Nagoya, Aichi (Japan); Yoshida, Kunio [Institute of Laser Engineering, Osaka Institute of Technology, Osaka (Japan)

2000-03-01

Diode-pumped microchip laser oscillation of highly Nd{sup 3+}-doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

International Nuclear Information System (INIS)

Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori; Ikesue, Akio; Yoshida, Kunio

2000-01-01

Diode-pumped microchip laser oscillation of highly Nd 3+ -doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

Electronic structure, magnetic and structural properties of Ni doped ZnO nanoparticles

International Nuclear Information System (INIS)

Kumar, Shalendra; Vats, Prashant; Gautam, S.; Gupta, V.P.; Verma, K.D.; Chae, K.H.; Hashim, Mohd; Choi, H.K.

2014-01-01

Highlights: • XRD, and HR-TEM results show the single phase nature of Ni doped ZnO nanoparticles. • dc magnetization results indicate the RT-FM in Ni doped ZnO nanoparticles. • Ni L 3,2 edge NEXAFS spectra infer that Ni ions are in +2 valence state. • O K edge NEXAFS spectra show that O vacancy increases with Ni doping in ZnO. - Abstract: We report structural, magnetic and electronic structural properties of Ni doped ZnO nanoparticles prepared by auto-combustion method. The prepared nanoparticles were characterized by using X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and dc magnetization measurements. The XRD and HR-TEM results indicate that Ni doped ZnO nanoparticles have single phase nature with wurtzite lattice and exclude the presence of secondary phase. NEXAFS measurements performed at Ni L 3,2 -edges indicates that Ni ions are in +2 valence state and exclude the presence of Ni metal clusters. O K-edge NEXAFS spectra indicate an increase in oxygen vacancies with Ni-doping, while Zn L 3,2 -edge show the absence of Zn-vacancies. The magnetization measurements performed at room temperature shows that pure and Ni doped ZnO exhibits ferromagnetic behavior

Numerical analysis of intrinsic bistability and chromatic switching in Tm3+ single-doped systems under photon avalanche pumping scheme

International Nuclear Information System (INIS)

Li Li; Zhang Xinlu; Chen Lixue

2008-01-01

In this paper, we predict and numerically demonstrate the intrinsic intensity bistability, spectra bistability and chromatic switching of visible-infrared emission in Tm 3+ single-doped systems that are pumped by the photon avalanche scheme at 648 nm. Based on the coupled rate equation theory, the evolutions of the populations at various Tm 3+ energy levels, emission spectra and fluorescence intensity versus pump excitation are numerically investigated in detail. The results show that intrinsic optical bistability (IOB) associated with emission spectra and luminescence intensity takes place in the vicinity of the avalanche threshold (∼10 kW cm -2 ). When the pump excitation rises above the switching threshold (∼17.5 kW cm -2 ), the chromatic switching between the infrared (1716 nm) and the visible blue (452/469 nm) spectra can be performed. Moreover, the influences of system parameters on IOB and the origin of chromatic switching are discussed. These unique characteristics of Tm 3+ -doped systems would lead to the new possibility of the development of pump-controlled all-solid-state luminescence switches and optical bistability switches.

Crystal growth and scintillation properties of Er-doped Lu{sub 3}Al{sub 5}O{sub 12} single crystals

Energy Technology Data Exchange (ETDEWEB)

Sugiyama, Makoto, E-mail: makoto.sugiyama@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Totsuka, Daisuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2012-02-01

Er-doped Lu{sub 3}Al{sub 5}O{sub 12} (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under {sup 241}Am {alpha}-ray excitation indicated host emission at approximately 350 nm and Er{sup 3+} 4f-4f emissions. According to the pulse height spectra recorded under {gamma}-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The {gamma}-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 {mu}s and 6-10 {mu}s).

Doping control analyses in horseracing: a clinician's guide.

Science.gov (United States)

Wong, Jenny K Y; Wan, Terence S M

2014-04-01

Doping(1) in sports is highly detrimental, not only to the athletes involved but to the sport itself as well as to the confidence of the spectators and other participants. To protect the integrity of any sport, there must be in place an effective doping control program. In human sports, a 'top-down' and generally unified approach is taken where the rules and regulations against doping for the majority of elite sport events held in any country are governed by the World Anti-Doping Agency (WADA). However, in horseracing, there is no single organisation regulating this form of equestrian sport; instead, the rules and regulations are provided by individual racing authorities and so huge variations exist in the doping control programs currently in force around the world. This review summarises the current status of doping control analyses in horseracing, from sample collection, to the analyses of the samples, and to the need for harmonisation as well as exploring some of the difficulties currently faced by racing authorities, racing chemists and regulatory veterinarians worldwide. Copyright © 2014 Elsevier Ltd. All rights reserved.

Growth of Ca, Zr co-doped BaTiO3 lead-free ferroelectric single crystal and its room-temperature piezoelectricity

Directory of Open Access Journals (Sweden)

Donglin Liu

2017-09-01

Full Text Available Lead-free Ca, Zr co-doped BaTiO3 (BCZT single crystal with a dimension up to 2mm×2mm×2mm was grown by a spontaneous nucleation technique using KF as the flux. The composition of the studied single crystal was defined to be Ba0.798Ca0.202Zr0.006Ti0.994O3, corresponding to a tetragonal phase at room temperature. The oriented single crystal exhibited a quasi-static piezoelectric constant of approximately 232 pC/N. The effective piezoelectric coefficient d33* of the single domain crystal obtained under a unipolar electric field of 35 kV/cm was 179 pm/V. Rayleigh analysis was used to identify the intrinsic and extrinsic contributions to the room-temperature piezoelectricity of BCZT single crystal. The extrinsic contribution was estimated up to 40% due to the irreversible domain wall movement. Furthermore a sixth-order polynomial of Landau expansion was employed to analyze the intrinsic contribution to piezoelectricity of BCZT single crystal. The large energy barriers inhibited polarization rotations, leading to the relatively low piezoelectricity.

Fuel cells with doped lanthanum gallate electrolyte

Science.gov (United States)

Feng, Man; Goodenough, John B.; Huang, Keqin; Milliken, Christopher

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800°C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800°C was achieved. our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum galiate and achieve higher power density at 800°C from solid oxide fuel cells.

Fuel cells with doped lanthanum gallate electrolyte

Energy Technology Data Exchange (ETDEWEB)

Feng Man [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Goodenough, J.B. [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Huang Keqin [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Milliken, C. [Cerematec, Inc., Salt Lake City, UT (United States)

1996-11-01

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800 C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800 C was achieved, our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum gallate and achieve higher power density at 800 C from solid oxide fuel cells. (orig.)

Nd-doped Lu3Al5O12 single-crystal scintillator for X-ray imaging

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Chani, Valery; Yokota, Yuui; Yoshikawa, Akira

2013-01-01

The optical and scintillation properties of Nd-doped Lu 3 Al 5 O 12 (Nd:LuAG) crystals grown by the Czochralski (Cz) method were examined under X-ray excitation. Their applicability for X-ray imaging was also inspected. The radioluminescence spectrum induced by X-rays showed a broad host emission and sharp Nd 3+ 4f–4f emission peaks in the UV to visible wavelengths. The light output current of the Nd:LuAG was 85% of that of a standard CdWO 4 X-ray scintillator. The afterglow value measured 20 ms after X-ray irradiation was 1.5%. An X-ray radiographic image was successfully obtained using the Nd:LuAG scintillator coupled with the charge coupled device (CCD) photodetector. -- Highlights: ► The Nd:LuAG single crystal was produced to perform X-ray imaging test. ► The sample exhibited the 85% light output current of the standard CdWO 4 . ► The afterglow intensity of the sample was very high compared with the CdWO 4 . ► The X-ray radiographic image was obtained from the Nd:LuAG single crystal

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

International Nuclear Information System (INIS)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y.; Cheng, C.H.; Zhao, Y.

2008-01-01

An over 150 nm thick Sm 0.2 Ce 0.8 O 1.9-x (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T c0 = 87 K as well as J c (0 T, 77 K) ∼ 1 MA/cm 2 . These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO 2 film, which renders it a promising candidate as single buffer layer for YBCO coated conductors

Elementary steps in electrical doping of organic semiconductors

KAUST Repository

Tietze, Max Lutz

2018-03-15

Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is little understood, with its elementary steps controversially discussed and mostly-empirical-materials design. Particularly puzzling is the efficient carrier release, despite a presumably large Coulomb barrier. Here we quantitatively investigate doping as a two-step process, involving single-electron transfer from donor to acceptor molecules and subsequent dissociation of the ground-state integer-charge transfer complex (ICTC). We show that carrier release by ICTC dissociation has an activation energy of only a few tens of meV, despite a Coulomb binding of several 100 meV. We resolve this discrepancy by taking energetic disorder into account. The overall doping process is explained by an extended semiconductor model in which occupation of ICTCs causes the classically known reserve regime at device-relevant doping concentrations.

Local structure of vanadium in doped LiFePO4

International Nuclear Information System (INIS)

Zhao, Ting; Xu, Wei; Ye, Qing; Cheng, Jie; Zhao, Haifeng; Chu, Wangsheng; Wu, Ziyu; Univ. of Science and Technology of China, Hefei; Xia, Dingguo

2010-01-01

LiFePO 4 composites with 5 at.% vanadium doping are prepared by solid state reactions. X-ray absorption fine-structure spectroscopy is used as a novel technique to identify vanadium sites. Both experimental analyses and theoretical simulations show that vanadium does not enter into the LiFePO 4 crystal lattice. When the vanadium concentration is lower then 1 at.%, the dopant remains insoluble. Thus, a single-phase vanadium-doped LiFePO4 cannot be formed and the improved electrochemical properties of vanadium doped LiFePO 4 previously reported cannot be associated with crystal structure changes of the LiFePO 4 via vanadium doping. (orig.)

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

Science.gov (United States)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

International Nuclear Information System (INIS)

Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

2015-01-01

Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L 3,2 NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L 3,2 edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles

Transient spectral hole burning observed on the single-molecule level in terrylene-doped biphenyl

International Nuclear Information System (INIS)

Pärs, M.; Palm, V.; Kikas, J.

2014-01-01

We use the method of fluorescence correlation spectroscopy to analyze the single-molecule (SM) spectroscopy data earlier recorded for a special type of terrylene SM impurity center (referred as “spectrally confined unstable molecule”, SCM) in an incommensurate single crystal of biphenyl. The SCM's SM line seems to be chaotically jumping around within a broad “spectral envelope” and was first considered being subject to a peculiar spectral diffusion behavior. However, our correlation analysis reveals that all the features observed for SCM at 1.8 K are consistent with an assumption that this SM center participates in a process of reversible (transient) spectral hole burning (THB) earlier observed for terrylene-doped polycrystalline biphenyl. No observations of THB processes on SM level have been so far reported for this impurity system, partially due to a low concentration of relevant impurity centers. Another reason making searching for such centers experimentally challenging is an unusual SM line behavior: the photoinduced transition to a metastable “dark state” leads to the SM line saturational broadening, which is much stronger than the triplet broadening. Hence required prolonged observation is often prevented by an SM act of persistent spectral hole burning. - Highlights: • SCM—special type of terrylene single-molecule center in incommensurate biphenyl. • An unusually stable SCM was investigated during several hours at T=1.8 K. • SCM undergoes photoinduced transitions to an unknown metastable “dark state” (DS). • The long DS lifetime causes strong saturational broadening of SCM spectral line. • SCM participates in an earlier observed process of transient hole burning

Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

International Nuclear Information System (INIS)

Murape, D.M.; Eassa, N.; Nyamhere, C.; Neethling, J.H.; Betz, R.; Coetsee, E.; Swart, H.C.; Botha, J.R.; Venter, A.

2012-01-01

Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH 4 ) 2 S/(NH 4 ) 2 SO 4 ) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (φ b ) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at −0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb–O, present on the as-received material is effectively removed on treating with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ]+S) and (NH 4 ) 2 S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.

Growth and characterization of magnesium chloride and lanthanum chloride doped strontium tartrate crystals - gel method

International Nuclear Information System (INIS)

Kalaiarasi, S.; Jaikumar, D.

2014-01-01

Growth of single crystals of doped strontium tartrate by controlled diffusion of strontium chloride into the silica gel charged with tartaric acid at room temperature is narrated. In this study, we synthesized magnesium chloride (5% and 10%) doped strontium tartrate crystals and Lanthanum chloride (5%, 10% and 15%) doped strontium tartrate crystals are grown. The crystal structure of the compound crystals was confirmed by single crystal X-ray diffraction. The Fourier transform infrared spectrum of pure and doped crystals are recorded and analyzed. The UV-Vis-NIR spectrum analysis reveals that the optical study of the grown crystals. The second harmonic generation efficiency was measured by using Kurtz powder technique with Nd:YAG laser of wavelength 1064 nm. (author)

Synthesis and pressure effects on the La doped CaFe{sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Shin, Soo Hyun; Park, Tuson [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Shang, T.; Yuan, H. Q. [Dept. of physics, Zhejiang University, Hangzhou (China)

2014-09-15

We have synthesized La doped CaFe2As{sub 2} single crystals with Sn flux in an evacuated quartz ampule. Doping and pressure effects on the magnetic and superconducting properties of the under-doped Ca{sub 1-x}La{sub x}Fe{sub 2}As{sub 2} (x=0.08, 0.1) were studied by measuring electrical resistivity under quasi-hydrostatic pressure up to 21 kbar. Magnetic transition temperatures for all studied concentrations were sharply suppressed with slight amplitude of pressure, less than 3 kbar, while superconducting transition temperatures were robust against pressure. In this communication, we report temperature-pressure phase diagram for the La-doped CaFe{sub 2}As{sub 2} single crystals.

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Science.gov (United States)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

Changes of fluorescent spectral features after successive rare earth doping of gadolinium oxide powders

Energy Technology Data Exchange (ETDEWEB)

Kuznik, W. [Chemical Department, Silesian University of Technology, Gliwice (Poland); Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Brik, M.G. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Cieslik, I.; Majchrowski, A.; Jaroszewicz, L. [Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); AlZayed, N.S. [Physics and Astronomy Dept., College of Science, P.O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia); El-Naggar, A.M. [Physics and Astronomy Dept., College of Science, P.O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia); Permanent address: Physics department, Faculty of Science, Ain Shams University, Abassia, Cairo 11566 (Egypt); Sildos, I.; Lange, S.; Kiisk, V. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Kityk, I.V., E-mail: ikityk@el.pcz.czest.pl [Electrical Engineering Department, Czestochowa University of Technology, Armii Krajowej 17, Czestochowa (Poland); Physics and Astronomy Dept., College of Science, P.O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia)

2012-01-15

Highlights: > Principally new phosphors based on rare earth moped Gd{sub 2}O{sub 3} are obtained. > The time-resolved fluorescent spectra show drastic changes with the doping. > Temperature measurements were done. - Abstract: We present a complex fluorescence study of a series of gadolinium oxide polycrystalline powders singly, doubly and triply doped with trivalent rare earth ions (Er{sup 3+}, Tb{sup 3+}, and Dy{sup 3+}), to explore a possibility of their use as materials for white light emitting diodes. The excitation and luminescence spectra along with the decay kinetics were measured in the temperature range from 6 to 300 K. The luminescence efficiency was studied within the visible spectral range, i.e. -400 nm to 750 nm under excitation by 355 nm third harmonic Nd:YAG laser pulses. Singly doped Er{sup 3+} sample gave stronger luminescence signals, but others showed significantly larger decay lifetimes. The successive rare earths doping leads to substantial changes of the spectral positions due to the up-conversion processes. In the singly (Er{sup 3+}) doped sample, following the time resolved spectrum and decay curves, there are two different types of emissions: at 660 nm and at shorter wavelengths (below 640 nm) the red emission's lifetime is ten times longer than at shorter wavelengths. The singly doped sample shows unclear temperature-dependence of luminescence with lifetime at 550 nm (the longest at 100 K, similarly at 6 K and 300 K) and achieved luminous efficacy 73.5 lm/W.

Upconversion study of singly activator ions doped La2O3 nanoparticle synthesized via optimized solvothermal method

Science.gov (United States)

Tiwari, S. P.; Singh, S.; Kumar, A.; Kumar, K.

2016-05-01

In present work, an optimized solvothermal method has been chosen to synthesize the singly doped Er3+ activator ions with La2O3 host matrix. The sample is annealed at 500 °C in order to remove the moisture and other organic impurities. The sample is characterized by using XRD and FESEM to find out the phase and surface morphology. The observed particle size is found almost 80 nm with spherical agglomerated shape. Upconversion spectra are recorded at room temperature using 976 nm diode laser excitation sources and consequently the emission peaks in green and red region are observed. The color coordinate diagram shows the results that the present material may be applicable in different light emitting sources.

Luminescent and scintillation properties of Sc3+and La3+doped Y2SiO5 powders and single crystalline films

International Nuclear Information System (INIS)

Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Voznyak, T.; Voloshynovskii, A.; Vistovskiy, V.; Paprocki, K.; Mosińska, L.; Bilski, P.; Twardak, A.; Fedorov, A.; Nikl, M.; Mares, J.A.

2016-01-01

The paper is dedicated to the investigation of the luminescence of Sc 3+ and La 3+ isoelectronic impurities in Y 2 SiO 5 (YSO) single crystalline films (SCF), grown by the liquid phase epitaxy (LPE) method, and in the powder analogs of these compounds prepared using the ceramic technology. The Sc 3+ and La 3+ dopants replacing the Y 3+ cations in Y1and Y2 positions of YSO host introduce the strong complex emission bands in the UV range peaked at 330 and 345 nm, respectively. The Sc 3+ and La 3+ dopant in YSO matrix yields also the strong TSL peaks at 400 and 405 K related to the ScY and ScLa centers formation, respectively. The luminescence and scintillation properties of YSO SCFs doped with Sc 3+ and La 3+ ions and co-doped with Ce 3+ ions on the trace impurity level have been also studied in our work. We have found that the light yield (LY) of these YSO:Sc and YSO:La SCFs can reach 50–65% of LY in reference YSO:Ce SCF due to strong quenching influence of Pb 2+ ions. Finally, the potential of Sc 3+ and La 3+ doped SCF of orthosilicates for creation of heavy scintillation screens, emitting in the UV range, is discussed.

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

Energy Technology Data Exchange (ETDEWEB)

Godbole, M., E-mail: mohit.godbole@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Neethling, J.H.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 {mu}m. In this particular study, the dots were grown at 450 Degree-Sign C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 {mu}m while the best spacer thickness was found to be 200 nm.

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

International Nuclear Information System (INIS)

Godbole, M.; Olivier, E.J.; Coetsee, E.; Swart, H.C.; Neethling, J.H.; Botha, J.R.

2012-01-01

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.

Structural and electrical characterization of zinc oxide doped with antimony

Directory of Open Access Journals (Sweden)

G. Juárez Díaz

2014-08-01

Full Text Available In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001 orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of 1 and 2 hours under nitrogen environment from a solid source formed by antimony oxide. Electrical characterization by I-V curves and Hall effect shown an increase in acceptor concentration which demonstrates that doping is effective and create holes in zinc oxide samples.

Application of nanostructured Ca doped CeO2 for ultraviolet filtration

International Nuclear Information System (INIS)

Truffault, Laurianne; Ta, Minh-Tri; Devers, Thierry; Konstantinov, Konstantin; Harel, Valerie; Simmonard, Cyriaque; Andreazza, Caroline; Nevirkovets, Ivan P.; Pineau, Alain; Veron, Olivier; Blondeau, Jean-Philippe

2010-01-01

Calcium doped CeO 2 nanoparticles with doping concentrations between 0 and 50 mol% were synthesized by a co-precipitation method for ultraviolet filtration application. Below 20 mol% doping concentration, the samples were single-phase. From 30 mol%, CaCO 3 appears as a secondary phase. The calculated CeO 2 mean crystallite size was 9.3 nm for the pure and 5.7 nm for the 50 mol% Ca-doped sample. Between 250 and 330 nm, the absorbance increased for the 10, 30, and 40 mol% Ca-doped samples compared to the pure one. The band-gap was found to be 3.20 eV for the undoped, and between 3.36 and 3.51 eV for the doped samples. The blue shifts are attributed to the quantum confinement effect. X-ray photoelectron spectroscopy showed that the Ce 3+ atomic concentration in the pure sample was higher than that of the 20 mol% Ca-doped sample.

A single-step synthesis of nitrogen-doped graphene sheets decorated with cobalt hydroxide nanoflakes for the determination of dopamine

Directory of Open Access Journals (Sweden)

Muhammad Mehmood Shahid

2017-10-01

Full Text Available Nitrogen-doped reduced graphene oxide (NrGO sheets decorated with Co(OH2 nanoflakes were prepared by a single-step hydrothermal process. The morphological and structural characterizations of as synthesized NrGO@Co(OH2 nanoflakes were performed by field emission scanning electron microscopy (FESEM, EDX-mapping and X-ray diffraction (XRD. NrGO@Co(OH2 nanoflakes modified glassy carbon electrode (GCE was used for electrochemical sensing of dopamine in neutral medium. The nanocomposite modified electrode showed enhanced electrochemical sensing ability for the detection of dopamine and the limit of detection (LoD was found to be 0.201 μM with a sensitivity value of 0.0286 ± 0.002 mA mM−1. Interference studies revealed that NrGO@Co(OH2─GCE endow excellent selectivity for DA detection even in the presence of higher concentration of common co-existing physiological interfering analytes. Additionally, proposed sensor demonstrated excellent performance in urine samples with promising reproducibility and stability. Keywords: Nitrogen doped graphene, Dopamine, Electrochemical sensor, Amperometric detection

Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

Science.gov (United States)

Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

2016-01-01

The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

Theoretical Investigation on Single-Wall Carbon Nanotubes Doped with Nitrogen, Pyridine-Like Nitrogen Defects, and Transition Metal Atoms

Directory of Open Access Journals (Sweden)

Michael Mananghaya

2012-01-01

Full Text Available This study addresses the inherent difficulty in synthesizing single-walled carbon nanotubes (SWCNTs with uniform chirality and well-defined electronic properties through the introduction of dopants, topological defects, and intercalation of metals. Depending on the desired application, one can modify the electronic and magnetic properties of SWCNTs through an appropriate introduction of imperfections. This scheme broadens the application areas of SWCNTs. Under this motivation, we present our ongoing investigations of the following models: (i (10, 0 and (5, 5 SWCNT doped with nitrogen (CNxNT, (ii (10, 0 and (5, 5 SWCNT with pyridine-like defects (3NV-CNxNT, (iii (10, 0 SWCNT with porphyrine-like defects (4ND-CNxNT. Models (ii and (iii were chemically functionalized with 14 transition metals (TMs: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt and Au. Using the spin-unrestricted density functional theory (DFT, stable configurations, deformations, formation and binding energies, the effects of the doping concentration of nitrogen, pyridine-like and porphyrine-like defects on the electronic properties were all examined. Results reveal that the electronic properties of SWCNTs show strong dependence on the concentration and configuration of nitrogen impurities, its defects, and the TMs adsorbed.

Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

International Nuclear Information System (INIS)

Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

2006-01-01

A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

Electric field influence on exciton absorption of Er doped and undoped InSe single crystals

International Nuclear Information System (INIS)

Guerbulak, B; Kundakci, M; Ates, A; Yildirim, M

2007-01-01

Undoped InSe and Er doped InSe (InSe:Er) single crystals were grown by using the Stockbarger method. Ingots had no cracks and voids on the surface. The absorption measurements were carried out in InSe and InSe:Er samples for U=0 and U=30 V in the temperature range 10-320 K with a step of 10 K. Electric field effects on excitons are observed in InSe and InSe:Er single crystals. The absorption edge shifted towards longer wavelengths and decreased intensity in absorption spectra under an electric field E≅5.9 kV cm -1 . The applied electric field caused a shifting and a decreasing of intensity in the absorption spectra. The shifting of the absorption edge can be explained on the basis of the Franz-Keldysh effect (FKE) or thermal heating of the sample under the electric field. At 10 and 320 K, the first exciton energies for InSe were calculated as 1.336 and 1.291 eV for zero voltage and 1.331 and 1.280 eV for electric field and InSe:Er as 1.329 and 1.251 eV for zero voltage and 1.318 and 1.248 eV for electric field, respectively

Optical characterization of Pr3+-doped yttria-stabilized zirconia single crystals

International Nuclear Information System (INIS)

Savoini, B.; Munoz Santiuste, J.E.; Gonzalez, R.

1997-01-01

The optical absorption and fluorescence of Pr 3+ ions in yttria-stabilized zirconia single crystals are investigated. Fluorescence emissions from the 1 D 2 level are clearly dominant and low intensity emission lines from the 3 P 0 and 1 G 4 states are also observed. Analysis with the Judd-Ofelt theory of the absorption intensities has been made assuming that only ∼40% of the praseodymium ions contribute to the optical absorption bands. Quantum efficiency values of η( 3 P 0 )∼0.2 and η( 1 D 2 )∼ 1 are obtained at room temperature. 1 D 2 fluorescence quenching has been observed in heavily-doped samples due to cross relaxation processes among neighboring Pr 3+ ions. Analysis using the Inokuti-Hirayama model shows that electric dipole-dipole interactions are mainly responsible for the quenching effect. Pr 3+ ions are present in seven and sixfold configurations with a statistical distribution. The energy position of the 4f5d configuration is very different for each center. The fluorescence dynamics is explained by a mechanism involving thermally assisted population of the 3 P 1,2 + 1 I 6 upper levels and fast relaxation to the 1 D 2 level via states of the excited 4f5d configuration. copyright 1997 The American Physical Society

The evolving science of detection of 'blood doping'.

Science.gov (United States)

Lundby, Carsten; Robach, Paul; Saltin, Bengt

2012-03-01

Blood doping practices in sports have been around for at least half a century and will likely remain for several years to come. The main reason for the various forms of blood doping to be common is that they are easy to perform, and the effects on exercise performance are gigantic. Yet another reason for blood doping to be a popular illicit practice is that detection is difficult. For autologous blood transfusions, for example, no direct test exists, and the direct testing of misuse with recombinant human erythropoietin (rhEpo) has proven very difficult despite a test exists. Future blood doping practice will likely include the stabilization of the transcription factor hypoxia-inducible factor which leads to an increased endogenous erythropoietin synthesis. It seems unrealistic to develop specific test against such drugs (and the copies hereof originating from illegal laboratories). In an attempt to detect and limit blood doping, the World Anti-Doping Agency (WADA) has launched the Athlete Biological Passport where indirect markers for all types of blood doping are evaluated on an individual level. The approach seemed promising, but a recent publication demonstrates the system to be incapable of detecting even a single subject as 'suspicious' while treated with rhEpo for 10-12 weeks. Sad to say, the hope that the 2012 London Olympics should be cleaner in regard to blood doping seems faint. We propose that WADA strengthens the quality and capacities of the National Anti-Doping Agencies and that they work more efficiently with the international sports federations in an attempt to limit blood doping. © 2012 The Authors. British Journal of Pharmacology © 2012 The British Pharmacological Society.

Ce-doped LuAG single-crystal fibers grown from the melt for high-energy physics

CERN Document Server

Xu, X; Moretti, F; Pauwels, K; Lecoq, P; Auffray, E; Dujardin, C

2014-01-01

Under a stationary stable regime undoped and Ce-doped LuAG (Lu3Al5O12) single-crystal fibers were grown by a micro-pulling-down technique. The meniscus length corresponding to the equilibrium state was <200 mu m. Fluctuations in the fiber composition and pulling rate were found to have a significant effect on the properties of the fibers grown. A great improvement in the performance was found in samples containing low Ce concentrations (<= 0.1 at.\\%) and produced using pulling rates <0.5 mm min(-1). Under such conditions a good lateral surface fiber quality was obtained and light propagation was significantly improved. Conversely, a high Ce concentration and a high pulling rate resulted in a strong degradation of the fiber surface quality causing defects to appear and a decrease in light output. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Room temperature ferromagnetism in Fe-doped CuO nanoparticles.

Science.gov (United States)

Layek, Samar; Verma, H C

2013-03-01

The pure and Fe-doped CuO nanoparticles of the series Cu(1-x)Fe(x)O (x = 0.00, 0.02, 0.04, 0.06 and 0.08) were successfully prepared by a simple low temperature sol-gel method using metal nitrates and citric acid. Rietveld refinement of the X-ray diffraction data showed that all the samples were single phase crystallized in monoclinic structure of space group C2/c with average crystallite size of about 25 nm and unit cell volume decreases with increasing iron doping concentration. TEM micrograph showed nearly spherical shaped agglomerated particles of 4% Fe-doped CuO with average diameter 26 nm. Pure CuO showed weak ferromagnetic behavior at room temperature with coercive field of 67 Oe. The ferromagnetic properties were greatly enhanced with Fe-doping in the CuO matrix. All the doped samples showed ferromagnetism at room temperature with a noticeable coercive field. Saturation magnetization increases with increasing Fe-doping, becomes highest for 4% doping then decreases for further doping which confirms that the ferromagnetism in these nanoparticles are intrinsic and are not resulting from any impurity phases. The ZFC and FC branches of the temperature dependent magnetization (measured in the range of 10-350 K by SQUID magnetometer) look like typical ferromagnetic nanoparticles and indicates that the ferromagnetic Curie temperature is above 350 K.

1.8 μm luminescent properties and energy transfer of Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Wang, Cheng; Zhang, Zhixiong; Jiang, Dongsheng; Zhang, Jian; He, Shinan; Tang, Qingyang; Sheng, Qiguo; Gu, Xuemei; Zhang, Yuepin [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Chen, Baojiu [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province, 116026 (China); Jiang, Haochuan, E-mail: jianghaochuan@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, The Chinese Academy of Sciences, Ningbo, Zhejiang, 315211 (China)

2016-09-25

This paper reports on successful preparation of α-NaYF{sub 4} single crystals co-doped with ∼1.9 mol% Tm{sup 3+} and various concentrations (3.85 mol%, 7.69 mol%, 11.54 mol%, 15.38 mol%) of Yb{sup 3+} by using a flux-Bridgman method. The fluorescence decay curve was measured to investigate the luminescent properties of the Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4}, and the energy transfer process from Yb{sup 3+} to Tm{sup 3+}; the J-O intensity parameters of Tm{sup 3+} were further calculated and analyzed according to the absorption spectra. Results show that, an intense 1.8 μm emission was achieved with Yb{sup 3+} as sensitizer for Tm{sup 3+} in the α-NaYF{sub 4} single crystal under the excitation of 980 nm LD (Laser Diode) because of the strong energy transfer from Yb{sup 3+} to Tm{sup 3+}. The maximum emission intensity at 1.8 μm is obtained at about 15.38 mol% doping concentration of Yb{sup 3+} when the concentration of Tm{sup 3+} ions is fixed at ∼1.90 mol% in the current research. Moreover, the calculated maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2} for 3.85 mol% Yb{sup 3+}/1.9 mol% Tm{sup 3+} sample, and the obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) are 1543 s{sup −1} and 83.8%, respectively. Our analysis of the fluorescence dynamics indicates that electric dipole-dipole interaction is dominant for the energy transfer from Yb{sup 3+} ions to Tm{sup 3+} ions by using Inokuti-Hirayama’s model. - Highlights: • The Tm{sup 3+}/Yb{sup 3+} co-doped α-NaYF{sub 4} single crystals were grown by Bridgman method. • The 1.8 μm emission intensity is obtained at 15.38 mol% Yb{sup 3+}/1.90 mol% Tm{sup 3+} sample. • The maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2}. • The energy transfer rate is 1543 s{sup −1} and energy transfer efficiency is 83.8%. • The physical mechanism for energy transfer from Yb{sup 3+} to Tm{sup 3+} ions

Sm-doped CeO{sub 2} single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

Energy Technology Data Exchange (ETDEWEB)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)], E-mail: yzhao@home.swjtu.edu.cn

2008-10-20

An over 150 nm thick Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T{sub c0} = 87 K as well as J{sub c}(0 T, 77 K) {approx} 1 MA/cm{sup 2}. These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO{sub 2} film, which renders it a promising candidate as single buffer layer for YBCO coated conductors.

Temperature and doping dependence of the high-energy kink in cuprates.

Science.gov (United States)

Zemljic, M M; Prelovsek, P; Tohyama, T

2008-01-25

It is shown that spectral functions within the extended t-J model, evaluated using the finite-temperature diagonalization of small clusters, exhibit the high-energy kink in single-particle dispersion consistent with recent angle-resolved photoemission results on hole-doped cuprates. The kink and waterfall-like features persist up to large doping and to temperatures beyond J; hence, the origin can be generally attributed to strong correlations and incoherent hole propagation at large binding energies. In contrast, our analysis predicts that electron-doped cuprates do not exhibit these phenomena in photoemission.

Preparation and photocatalytic activity of B, Y co-doped nanosized TiO_2 catalyst

Institute of Scientific and Technical Information of China (English)

石中亮; 刘富梅; 姚淑华

2010-01-01

The catalysts of un-doped, single-doped and co-doped titanium dioxide (TiO2) powders were prepared by sol-gel method with Ti(OC4H9)4 as a raw material. The photocatalytic decomposition of phenol in aqueous solution under UV light was used as a probe reaction to evaluate their photocatalytic activities. The effects of B, Y co-doping on the crystallite sizes, crystal pattern, surface composition, and optical property of the catalyst were investigated by thermogravimetric differential thermal analysis, X-ray d...

Potassium acceptor doping of ZnO crystals

Directory of Open Access Journals (Sweden)

Narendra S. Parmar

2015-05-01

Full Text Available ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

Potassium acceptor doping of ZnO crystals

Science.gov (United States)

Parmar, Narendra S.; Corolewski, Caleb D.; McCluskey, Matthew D.; Lynn, K. G.

2015-05-01

ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ˜1 × 1016 cm-3. IR measurements show a local vibrational mode (LVM) at 3226 cm-1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O-H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm-1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

Potassium acceptor doping of ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Parmar, Narendra S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States); Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Corolewski, Caleb D.; McCluskey, Matthew D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

2015-05-15

ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 10{sup 16} cm{sup −3}. IR measurements show a local vibrational mode (LVM) at 3226 cm{sup −1}, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm{sup −1}. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

Energy Technology Data Exchange (ETDEWEB)

Dimitrov, D.; Shieh, H.-P.D

2004-03-15

Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks.

Optically stimulated luminescence of Tb{sup 3+}/Sm{sup 3+} doubly doped K{sub 2}YF{sub 5} single crystals

Energy Technology Data Exchange (ETDEWEB)

Camargo, L.; Marcazzo, J.; Santiago, M.; Caselli, E. [Universidad Nacional del Centro de la Provincia de Buenos Aires, Instituto de Fisica Arroyo Seco, Gral. Pinto 399, B7000GHG, Tandil (Argentina); Khaidukov, N. M., E-mail: jmarcass@exa.unicen.edu.ar [Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninskii Prospekt 31, 119991 Moscow (Russian Federation)

2014-08-15

In this work optically stimulated luminescence (OSL) properties of K{sub 2}YF{sub 5} crystals doubly doped with Tb{sup 3+} and Sm{sup 3+} ions have been investigated for the first time. OSL responses for different dopant concentration and for optical stimulation with different wavelengths have been analyzed for each compound. Dosimetric properties of the most efficient composition, namely, K{sub 2}YF{sub 5}:1.0 at.% Tb{sup 3+}; 1.0 at.% Sm{sup 3+}, have been studied. Finally, the possible application of this single crystal as OSL dosimeter has been evaluated. (Author)

A reliable method for the counting and control of single ions for single-dopant controlled devices

International Nuclear Information System (INIS)

Shinada, T; Kurosawa, T; Nakayama, H; Zhu, Y; Hori, M; Ohdomari, I

2008-01-01

By 2016, transistor device size will be just 10 nm. However, a transistor that is doped at a typical concentration of 10 18 atoms cm -3 has only one dopant atom in the active channel region. Therefore, it can be predicted that conventional doping methods such as ion implantation and thermal diffusion will not be available ten years from now. We have been developing a single-ion implantation (SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached. Here we report a simple but reliable method to control the number of single-dopant atoms by detecting the change in drain current induced by single-ion implantation. The drain current decreases in a stepwise fashion as a result of the clusters of displaced Si atoms created by every single-ion incidence. This result indicates that the single-ion detection method we have developed is capable of detecting single-ion incidence with 100% efficiency. Our method potentially could pave the way to future single-atom devices, including a solid-state quantum computer

Anode-supported single-chamber SOFCs based on gadolinia doped ceria electrolytes

Directory of Open Access Journals (Sweden)

Morales, M.

2008-12-01

Full Text Available The utilization of anode supported electrolytes is a useful strategy to increase the electrical properties of the solid oxide fuel cells, because it is possible to decrease considerably the thickness of the electrolytes. We have prepared successfully singlechamber fuel cells of gadolinia doped ceria electrolytes Ce_1-xGd_xO_2-y (CGO supported on an anode formed by a cermet of Ni-CGO. Mixtures of precursor powders of NiO and gadolinium doped ceria with different particle sizes and compositions were analyzed to obtain optimal bulk porous anodes to be used as anode supported fuel cells. Doped ceria electrolytes were prepared by sol-gel related techniques. Then, ceria based electrolytes were deposited by dip coating at different thickness (15-30 µm using an ink prepared with nanometric powders of electrolytes dispersed in a commercial liquid polymer. Cathodes of La_1-xSr_xCoO_3-s (LSCO were also prepared by sol-gel related techniques and were deposited by dip coating on the electrolyte thick films. Finally, electrical properties were determined in a single-chamber reactor where propane as fuel was mixed with synthetic air above the higher explosive limit. Stable density currents were obtained in these experimental conditions, but flow rates of the carrier gas and propane partial pressure were determinants for the optimization of the electrical properties of the fuel cells.

La utilización de electrolitos soportados en el ánodo es una estrategia muy útil para mejorar las propiedades eléctricas de las pilas de combustible de óxido sólido, debido a que permiten disminuir considerablemente el espesor de los electrolitos. Para este trabajo, se han preparado exitosamente pilas de combustible de óxido sólido con electrolitos de ceria dopada con Gd, Ce1_-xGd_xO_2-y (CGO soportados sobre un ánodo formado por un cermet de Ni/CGO. Dichas pilas se han

Niobium-doped strontium titanates as SOFC anodes

DEFF Research Database (Denmark)

Blennow Tullmar, Peter; Kammer Hansen, Kent; Wallenberg, L. Reine

2008-01-01

been synthesized with a recently developed modified glycine-nitrate process. The synthesized powders have been calcined and sintered in air or in 9% H(2) / N(2) between 800 - 1400 degrees C. After calcination the samples were single phase Nb-doped strontium titanate with grain sizes of less than 100 nm...... in diameter on average. The phase purity, defect structure, and microstructure of the materials have been analyzed with SEM, XRD, and TGA. The electrical conductivity of the Nb-doped titanate decreased with increasing temperature and showed a phonon scattering conduction mechanism with sigma > 120 S...... ability of the Nb-doped titanates to be used as a part of a SOFC anode. However, the catalytic activity of the materials was not sufficient and it needs to be improved if titanate based materials are to be realized as constituents in SOFC anodes....

Tunable and switchable dual-wavelength single polarization narrow linewidth SLM erbium-doped fiber laser based on a PM-CMFBG filter.

Science.gov (United States)

Yin, Bin; Feng, Suchun; Liu, Zhibo; Bai, Yunlong; Jian, Shuisheng

2014-09-22

A tunable and switchable dual-wavelength single polarization narrow linewidth single-longitudinal-mode (SLM) erbium-doped fiber (EDF) ring laser based on polarization-maintaining chirped moiré fiber Bragg grating (PM-CMFBG) filter is proposed and demonstrated. For the first time as we know, the CMFBG inscribed on the PM fiber is applied for the wavelength-tunable and-switchable dual-wavelength laser. The PM-CMFBG filter with ultra-narrow transmission band (0.1 pm) and a uniform polarization-maintaining fiber Bragg grating (PM-FBG) are used to select the laser longitudinal mode. The stable single polarization SLM operation is guaranteed by the PM-CMFBG filter and polarization controller. A tuning range of about 0.25 nm with about 0.075 nm step is achieved by stretching the uniform PM-FBG. Meanwhile, the linewidth of the fiber laser for each wavelength is approximate 6.5 and 7.1 kHz with a 20 dB linewidth, which indicates the laser linewidth is approximate 325 Hz and 355 Hz FWHM.

Accurate X-ray diffraction studies of KTiOPO{sub 4} single crystals doped with niobium

Energy Technology Data Exchange (ETDEWEB)

Novikova, N. E., E-mail: natnov@ns.crys.ras.ru; Sorokina, N. I.; Alekseeva, O. A.; Verin, I. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Scientific Research Center (Russian Federation); Kharitonova, E. P.; Orlova, E. I.; Voronkova, V. I. [Moscow State University, Faculty of Physics (Russian Federation)

2017-01-15

Single crystals of potassium titanyl phosphate doped with 4% of niobium (КТР:4%Nb) and 6% of niobium (KTP:6%Nb) are studied by accurate X-ray diffraction at room temperature. The niobium atoms are localized near the Ti1 and Ti2 atomic positions, and their positions are for the first time refined independent of the titanium atomic positions. Maps of difference electron density in the vicinity of K1 and K2 atomic positions are analyzed. It is found that in the structure of crystal КТР:4%Nb, additional positions of K atoms are located farther from the main positions and from each other than in КТР and KTP:6%Nb crystals. The nonuniform distribution of electron density found in the channels of the КТР:4%Nb structure is responsible for ~20% increase in the signal of second harmonic generation.

Synthesis and Fluorescence Property of Mn-Doped ZnSe Nanowires

Directory of Open Access Journals (Sweden)

Dongmei Han

2010-01-01

Full Text Available Water-soluble Mn-doped ZnSe luminescent nanowires were successfully prepared by hydrothermal method without any heavy metal ions and toxic reagents. The morphology, composition, and property of the products were investigated. The experimental results showed that the Mn-doped ZnSe nanowires were single well crystallized and had a zinc blende structure. The average length of the nanowires was about 2-3 μm, and the diameter was 80 nm. With the increase of Mn2+-doped concentration, the absorbance peak showed large difference. The UV-vis absorbance spectrum showed that the Mn-doped ZnSe nanowires had a sharp absorption band appearing at 360 nm. The PL spectrum revealed that the nanowires had two distinct emission bands centered at 432 and 580 nm.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

Science.gov (United States)

Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

2017-08-01

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of post-annealing and cobalt co-doping on superconducting properties of (Ca,Pr)Fe{sub 2}As{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Okada, T., E-mail: 8781303601@mail.ecc.u-tokyo.ac.jp; Ogino, H.; Yakita, H.; Yamamoto, A.; Kishio, K.; Shimoyama, J.

2014-10-15

Highlights: • Post-annealing at 400 °C killed superconductivity for Co-free sample. • Pr,Co co-doped samples maintained superconductivity even after annealing. • Two-step superconducting transition was observed via magnetization measurement. • Bulk superconductivity of low-T{sub c} component was confirmed. • Superconducting volume fraction of high-T{sub c} component was always small. - Abstract: In order to clarify the origin of anomalous superconductivity in (Ca,RE)Fe{sub 2}As{sub 2} system, Pr doped and Pr,Co co-doped CaFe{sub 2}As{sub 2} single crystals were grown by the FeAs flux method. These samples showed two-step superconducting transition with T{sub c1} = 25–42 K, and T{sub c2} < 16 K, suggesting that (Ca,RE)Fe{sub 2}As{sub 2} system has two superconducting components. Post-annealing performed for these crystals in evacuated quartz ampoules at various temperatures revealed that post-annealing at ∼400 °C increased the c-axis length for all samples. This indicates that as-grown crystals have a certain level of strain, which is released by post-annealing at ∼400 °C. Superconducting properties also changed dramatically by post-annealing. After annealing at 400 °C, some of the co-doped samples showed large superconducting volume fraction corresponding to the perfect diamagnetism below T{sub c2} and high J{sub c} values of 10{sup 4}–10{sup 5} A cm{sup −2} at 2 K in low field, indicating the bulk superconductivity of (Ca,RE)Fe{sub 2}As{sub 2} phase occurred below T{sub c2}. On the contrary, the superconducting volume fraction above T{sub c2} was always very small, suggesting that 40 K-class superconductivity observed in this system is originating in the local superconductivity in the crystal.

A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

International Nuclear Information System (INIS)

Choi, S. M.; Shin, G. M.; Joo, Y.S.; Yoo, S. I.

2013-01-01

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped YBa 2 Cu 3 O 7-δ (YBCO) films with the same thickness of ∽350 nm for a comparative purpose. The films were prepared on the SrTiO 3 (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density (J c ) and pinning force density (F p ). The anisotropic J c ,min/J c ,max ratio in the field-angle dependence of J c at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic J c values of 9.0 and 2.9 MA/cm 2 with the maximum F p (F p ,max) values of 19 and 5 GN/m 3 at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller BaZrO-3 (BZO) nanoparticles (the average size ≈ 28.4 nm) than YBa 2 SnO 5. 5 (YBSO) nanoparticles (the average size ≈ 45.0 nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2O3 semiconductor

International Nuclear Information System (INIS)

Bouhdjer, L.; Addala, S.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.

2013-01-01

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski (Cz) method. The effects of dopant Sb 2 O 3 nanocrystals on structural and optical properties were investigated by a number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX) analysis, UV-visible and photoluminescence (PL) spectrophotometers. An XRD pattern of KCl:Sb 2 O 3 reveals that the Sb 2 O 3 nanocrystals are in the well-crystalline orthorhombic phase. The broadening of diffraction peaks indicated the presence of a Sb 2 O 3 semiconductor in the nanometer size regime. The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb 2 O 3 nanocrystals. Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies. An SEM image of the surface KCl:Sb 2 O 3 single crystal shows large quasi-spherical of Sb 2 O 3 crystallites scattered on the surface. The elemental analysis from EDAX demonstrates that the KCl:Sb 2 O 3 single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed. (semiconductor materials)

Doping Control Via Molecularly Engineered Surface Ligand Coordination

KAUST Repository

Yuan, Mingjian; Zhitomirsky, David; Adinolfi, Valerio; Voznyy, Oleksandr; Kemp, Kyle W.; Ning, Zhijun; Lan, Xinzheng; Xu, Jixian; Kim, Jin Young; Dong, Haopeng; Sargent, Edward H.

2013-01-01

A means to control the net doping of a CQD solid is identified via the design of the bidentate ligand crosslinking the material. The strategy does not rely on implementing different atmospheres at different steps in device processing, but instead is a robust strategy implemented in a single processing ambient. We achieve an order of magnitude difference in doping that allows us to build a graded photovoltaic device and maintain high current and voltage at maximum power-point conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Doping Control Via Molecularly Engineered Surface Ligand Coordination

KAUST Repository

Yuan, Mingjian

2013-08-05

A means to control the net doping of a CQD solid is identified via the design of the bidentate ligand crosslinking the material. The strategy does not rely on implementing different atmospheres at different steps in device processing, but instead is a robust strategy implemented in a single processing ambient. We achieve an order of magnitude difference in doping that allows us to build a graded photovoltaic device and maintain high current and voltage at maximum power-point conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural and optical properties of a NaCl single crystal doped with CuO nanocrystals

International Nuclear Information System (INIS)

Addala, S.; Bouhdjer, L.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.; Bouhdjar, A.

2013-01-01

A cupric oxide (CuO) nanocrystal-doped NaCl single crystal and a pure NaCl single crystal are grown by using the Czochralski (Cz) method. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, optical absorption in the UV—visible range, and photoluminescence (PL) spectroscopy are used to characterize the obtained NaCl and NaCl:CuO crystals. It is observed that the average radius of CuO crystallites in NaCl:CuO crystal is about 29.87 nm, as derived from the XRD data analysis. Moreover, FT-IR and Raman spectroscopy results confirm the existence of the monoclinic CuO phase in NaCl crystal. UV—visible absorption measurements indicate that the band gap of the NaCl:CuO crystal is 434 nm (2.85 eV), and it shows a significant amount of blue-shift (ΔE g = 1 eV) in the band gap energy of CuO, which is due to the quantum confinement effect exerted by the CuO nanocrystals. The PL spectrum of the NaCl:CuO shows a broad emission band centred at around 438 nm, which is consistent with the absorption measurement. (interdisciplinary physics and related areas of science and technology)

Sodium doping in ZnO crystals

Science.gov (United States)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

Group-13 and group-15 doping of germanane

Directory of Open Access Journals (Sweden)

Nicholas D. Cultrara

2017-08-01

Full Text Available Germanane, a hydrogen-terminated graphane analogue of germanium has generated interest as a potential 2D electronic material. However, the incorporation and retention of extrinsic dopant atoms in the lattice, to tune the electronic properties, remains a significant challenge. Here, we show that the group-13 element Ga and the group-15 element As, can be successfully doped into a precursor CaGe2 phase, and remain intact in the lattice after the topotactic deintercalation, using HCl, to form GeH. After deintercalation, a maximum of 1.1% As and 2.3% Ga can be substituted into the germanium lattice. Electronic transport properties of single flakes show that incorporation of dopants leads to a reduction of resistance of more than three orders of magnitude in H2O-containing atmosphere after As doping. After doping with Ga, the reduction is more than six orders of magnitude, but with significant hysteretic behavior, indicative of water-activation of dopants on the surface. Only Ga-doped germanane remains activated under vacuum, and also exhibits minimal hysteretic behavior while the sheet resistance is reduced by more than four orders of magnitude. These Ga- and As-doped germanane materials start to oxidize after one to four days in ambient atmosphere. Overall, this work demonstrates that extrinsic doping with Ga is a viable pathway towards accessing stable electronic behavior in graphane analogues of germanium.

Experimental study of a Q-switched ytterbium-doped double-clad fiber laser

International Nuclear Information System (INIS)

Anzueto S, G.; Estudillo A, M.; Martinez R, A.; Torres G, I.; Selvas A, R.

2008-01-01

We report an experimental characterization of a Q-switched operation of an all-fiber laser using , 30 m of a double-clad ytterbium-doped fiber spliced to a piece of single-mode un-doped holey fiber. Loss modulation in the splicing point between the active and un-doped fiber due to a substantial coupling of light into lossy cladding modes stimulates pulsed operation of the fiber laser. Pulse energy of ∼2.5 μJ was estimated and the repetition rate was measured in the range of 4-16 KHz. (Author)

Fabricating large two-dimensional single colloidal crystals by doping with active particles

NARCIS (Netherlands)

van der Meer, B; Filion, L; Dijkstra, M

2016-01-01

Using simulations we explore the behaviour of two-dimensional colloidal (poly)crystals doped with active particles. We show that these active dopants can provide an elegant new route to removing grain boundaries in polycrystals. Specifically, we show that active dopants both generate and are

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

Science.gov (United States)

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

2013-12-01

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

Energy Technology Data Exchange (ETDEWEB)

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2013-12-28

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

International Nuclear Information System (INIS)

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

2013-01-01

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs

Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

International Nuclear Information System (INIS)

Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R.J.; Phase, D.M.

2016-01-01

The structural, magnetic and magneto-transport of undoped ZnO, Zn_0_._9_7Al_0_._0_3O, Zn_0_._9_5Fe_0_._0_5O and Zn_0_._9_2Al_0_._0_3Fe_0_._0_5O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

Energy Technology Data Exchange (ETDEWEB)

Kumar, Santosh, E-mail: skphysics@yahoo.co.in [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Deepika [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Tripathi, Malvika [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Vaibhav, Pratyush [Jaypee University of Engineering and Technology, Guna 473226, Madhya Pradesh (India); Kumar, Aman [Indian Institute of Technology, Roorkee (India); Kumar, Ritesh [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Choudhary, R.J., E-mail: ram@csr.res.in [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Phase, D.M. [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India)

2016-12-01

The structural, magnetic and magneto-transport of undoped ZnO, Zn{sub 0.97}Al{sub 0.03}O, Zn{sub 0.95}Fe{sub 0.05}O and Zn{sub 0.92}Al{sub 0.03}Fe{sub 0.05}O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

Shuttling single metal atom into and out of a metal nanoparticle.

Science.gov (United States)

Wang, Shuxin; Abroshan, Hadi; Liu, Chong; Luo, Tian-Yi; Zhu, Manzhou; Kim, Hyung J; Rosi, Nathaniel L; Jin, Rongchao

2017-10-10

It has long been a challenge to dope metal nanoparticles with a specific number of heterometal atoms at specific positions. This becomes even more challenging if the heterometal belongs to the same group as the host metal because of the high tendency of forming a distribution of alloy nanoparticles with different numbers of dopants due to the similarities of metals in outmost electron configuration. Herein we report a new strategy for shuttling a single Ag or Cu atom into a centrally hollow, rod-shaped Au 24 nanoparticle, forming AgAu 24 and CuAu 24 nanoparticles in a highly controllable manner. Through a combined approach of experiment and theory, we explain the shuttling pathways of single dopants into and out of the nanoparticles. This study shows that the single dopant is shuttled into the hollow Au 24 nanoparticle either through the apex or side entry, while shuttling a metal atom out of the Au 25 to form the Au 24 nanoparticle occurs mainly through the side entry.Doping a metal nanocluster with heteroatoms dramatically changes its properties, but it remains difficult to dope with single-atom control. Here, the authors devise a strategy to dope single atoms of Ag or Cu into hollow Au nanoclusters, creating precise alloy nanoparticles atom-by-atom.

Photoluminescence of anti-modulation doped near-surface GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

CERN Document Server

Bumaj, Y A; Goldkhan, R; Shtajn, N; Golombek, A; Nakov, V; Cheng, T S

2002-01-01

The anti-modulation Si-doped GaAs/AlGaAs structures with near-surface single quantum wells grown by molecular-beam epitaxy were exposed to hydrogen plasma at 260 deg C and investigated by low-temperature photoluminescence, photoluminescence excitation and photoreflectance spectroscopy. After hydrogenation, the quenching of the exciton luminescence for the below AlGaAs band gap excitation due to the increase of electric field in the structure has been observed. The effect is consistent with unpinning of Fermi level from mid gap of nominally undoped (p-type) GaAs cap layer due to passivation of surface states by hydrogen without neutralization of shallow impurities in the epilayers

Ultrasonic attenuation in the superconducting and intermediate states of pure and doped type I superconductors

International Nuclear Information System (INIS)

Chaudhuri, K.D.; Singh, R.

1982-01-01

The attenuation of longitudinal ultrasonic waves has been measured in single crystals of indium (99.999%), indium doped with 0.003 at % of tin, and indium doped with 0.002 at % of bismuth in the intermediate and superconducting states over the frequency range 10--30 MHz. For the bismuth-doped indium specimen, measurements were taken for three different physical states, i.e., for three different dislocation densities, and for the indium and the tin-doped indium specimens, measurements were for one-physical state. For a particular measurement, the same physical state was maintained both in the intermediate and superconducting states. A temperature-dependent oscillatory behavior of the ultrasonic attenuation was observed in the intermediate state in all the three specimens, but in the superconducting state the oscillatory behavior was observed only in the bismuth-doped specimen. Two phases have been identified in the superconducting layers of the intermediate state and there is only one phase in the superconducting state of the bismuth-doped sample. The origin of the two phases in the intermediate state and that of the single phase in the superconducting state of the bismuth-doped sample are discussed. A qualitative explanation is presented for the occurrence of oscillatory attenuation in the intermediate state irrespective of the nature of the dopant and the selective occurrence of oscillatory attenuation in the superconducting state due to the nature of the dopant

Dietary supplementation and doping-related factors in high-level sailing

Directory of Open Access Journals (Sweden)

Rodek Jelena

2012-12-01

Full Text Available Abstract Background Although dietary supplements (DSs in sports are considered a natural need resulting from athletes’ increased physical demands, and although they are often consumed by athletes, data on DS usage in Olympic sailing are scarce. The aim of this study was to study the use of and attitudes towards DSs and doping problems in high-level competitive sailing. Methods The sample consisted of 44 high-level sailing athletes (5 of whom were female; total mean age 24.13 ± 6.67 years and 34 coaches (1 of whom was female; total mean age 37.01 ± 11.70. An extensive, self-administered questionnaire of substance use was used, and the subjects were asked about sociodemographic data, sport-related factors, DS-related factors (i.e., usage of and knowledge about DSs, sources of information, and doping-related factors. The Kruskal-Wallis ANOVA was used to determine the differences in group characteristics, and Spearman’s rank order correlation and a logistic regression analysis were used to define the relationships between the studied variables. Results DS usage is relatively high. More than 77% of athletes consume DSs, and 38% do so on a regular basis (daily. The athletes place a high degree of trust in their coaches and/or physicians regarding DSs and doping. The most important reason for not consuming DSs is the opinion that DSs are useless and a lack of knowledge about DSs. The likelihood of doping is low, and one-third of the subjects believe that doping occurs in sailing (no significant differences between athletes and coaches. The logistic regression found crew number (i.e., single vs. double crew to be the single significant predictor of DS usage, with a higher probability of DS consumption among single crews. Conclusion Because of the high consumption of DSs future investigations should focus on real nutritional needs in sailing sport. Also, since athletes reported that their coaches are the primary source of information about

To dope or not to dope

DEFF Research Database (Denmark)

Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

2013-01-01

tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

Preparation and enhanced oxidation performance of a Hf-doped single-phase Pt-modified aluminide coating

International Nuclear Information System (INIS)

Yang, Y.F.; Jiang, C.Y.; Yao, H.R.; Bao, Z.B.; Zhu, S.L.; Wang, F.H.

2016-01-01

Graphical abstract: Tiny Hf particles were successfully incorporated into Pt plating via simple electro-plating method. The hafnium particles were either nipped at Pt grain boundaries or wrapped inside Pt grains, and most of them were below 3 μm in size, showing a uniform distribution within the Pt plating. - Highlights: • A Hf-rich belt formed between outer (Ni,Pt)Al and IDZ after aluminisation. • Hf-doped coating showed much decreased mass gain and oxidation rate constant k_p. • Hf-rich belt acted as diffusion barrier by restraining diffusions of Al and W. • Degradation of β was effectively postponed by the unique Hf addition. • Hf-doped coating exhibited lighter oxide scale rumpling tendency. - Abstract: A Hf-doped β-(Ni,Pt)Al coating was prepared by co-deposition of a Pt-Hf composite plating and successive aluminisation. Then, a distinct Hf-rich belt was formed internally between the outer additive (Ni,Pt)Al coating and interdiffusion zone. An isothermal oxidation test at 1100 °C revealed a relatively lower oxidation rate constant and decreased oxide scale rumpling tendency for the Hf-doped coating during which the Hf-rich belt partly acted as an effective diffusion barrier. The unique addition of Hf into a β-(Ni,Pt)Al coating can delay the transitional oxidation period from transient alumina to stable one and postpone the degradation from β to γ'.

New GasB-based single-mode diode lasers in the NIR and MIR spectral regime for sensor applications

Science.gov (United States)

Milde, Tobias; Hoppe, Morten; Tatenguem, Herve; Honsberg, Martin; Mordmüller, Mario; O'Gorman, James; Schade, Wolfgang; Sacher, Joachim

2018-02-01

The NIR/MIR region between 1.8μm and 3.5μm contains important absorption lines for gas detection. State of the art are InP laser based setups, which show poor gain above 1.8μm and cannot be applied beyond 2.1μm. GaSb laser show a significantly higher output power (100mW for Fabry-Perot, 30mW for DFB). The laser design is presented with simulation and actual performance data. The superior performance of the GaSb lasers is verified in gas sensing applications. TDLAS and QEPAS measurements at trace gases like CH4, CO2 and N2O are shown to prove the spectroscopy performance.

Sodium doping in ZnO crystals

International Nuclear Information System (INIS)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

EPR and optical investigation of Mn2+ doped L-histidine-4-nitrophenolate 4-nitrophenol single crystal

Science.gov (United States)

Prabakaran, R.; Subramanian, P.

2018-04-01

Single crystals of L-histidine-4-nitrophenolate 4-nitrophenol[LHFNP] complex doped with Mn2+ were grown by the slow evaporation method at room temperature. The EPR spectrum reveals the entry of one Mn2+ ion in the lattice. The angular variation plot was drawn between the angles and the magnetic field position. The spin Hamiltonian parameters were obtained by EPR-NMR program. The D and E values show the rhombic field around the ion and is an interstitial one. The g value obtained here suggests that the Mn2+ ion experiences a strong field and there is a transfer of electron from the metal ion to the ligand atom. The optical absorption study shows various bands and are assigned to the transition from the ground state 6A1g(S). The Racah and crystal field parameters have also been evaluated and fitted to the experimental values. The Racah parameter shows the covalent bonding between the metal ion to the ligand.

Tracking Single DNA Nanodevices in Hierarchically Meso-Macroporous Antimony-Doped Tin Oxide Demonstrates Finite Confinement.

Science.gov (United States)

Mieritz, Daniel; Li, Xiang; Volosin, Alex; Liu, Minghui; Yan, Hao; Walter, Nils G; Seo, Dong-Kyun

2017-06-27

Housing bio-nano guest devices based on DNA nanostructures within porous, conducting, inorganic host materials promise valuable applications in solar energy conversion, chemical catalysis, and analyte sensing. Herein, we report a single-template synthetic development of hierarchically porous, transparent conductive metal oxide coatings whose pores are freely accessible by large biomacromolecules. Their hierarchal pore structure is bimodal with a larger number of closely packed open macropores (∼200 nm) at the higher rank and with the remaining space being filled with a gel network of antimony-doped tin oxide (ATO) nanoparticles that is highly porous with a broad size range of textual pores mainly from 20-100 nm at the lower rank. The employed carbon black template not only creates the large open macropores but also retains the highly structured gel network as holey pore walls. Single molecule fluorescence microscopic studies with fluorophore-labeled DNA nanotweezers reveal a detailed view of multimodal diffusion dynamics of the biomacromolecules inside the hierarchically porous structure. Two diffusion constants were parsed from trajectory analyses that were attributed to free diffusion (diffusion constant D = 2.2 μm 2 /s) and to diffusion within an average confinement length of 210 nm (D = 0.12 μm 2 /s), consistent with the average macropore size of the coating. Despite its holey nature, the ATO gel network acts as an efficient barrier to the diffusion of the DNA nanostructures, which is strongly indicative of physical interactions between the molecules and the pore nanostructure.

A high stability wavelength-tunable narrow-linewidth and single-polarization erbium-doped fiber laser using a compound-cavity structure

International Nuclear Information System (INIS)

Feng, Ting; Yan, Fengping; Peng, Wanjing; Liu, Shuo; Tan, Siyu; Liang, Xiao; Wen, Xiaodong

2014-01-01

A high stability wavelength-tunable narrow-linewidth and single-polarization erbium-doped fiber laser using a compound-cavity structure is proposed and demonstrated experimentally. The compound-cavity is composed of a main-linear-cavity and a subring-cavity. Using a pump power of 150 mW, the optical signal to noise ratio of the laser output is as high as ∼67 dB; the wavelength and output power fluctuation are 0.7 pm and 0.07 dBm respectively in an experimental period of 1 h; the linewidth of the laser output is as narrow as 650 Hz; the degree of polarization of the laser output is stable at a value of 100.8% in 15 min and the polarization extinction ratio is as high as 30.57 dB; the wavelength-tunable range is as wide as ∼8.1 nm. The proposed fiber laser can be used in areas where high stability, narrow-linewidth, single-polarization and wide wavelength-tunable range are needed. (letter)

Doping effect on the physical properties of Ca10Pt3As8(Fe2As2)5 single crystals

Science.gov (United States)

Pan, Jiayun; Karki, Amar; Plummer, E. W.; Jin, Rongying

2017-12-01

Ca10Pt3As8(Fe2As2)5 is a unique parent compound for superconductivity, which consists of both semiconducting Pt3As8 and metallic FeAs layers. We report the observation of superconductivity induced via chemical doping in either Ca site using rare-earth (RE) elements (RE  =  La, Gd) or Fe site using Pt. The interlayer distance and the normal-state physical properties of the doped system change correspondingly. The coupled changes include (1) superconducting transition temperature T c increases with increasing both doping concentration and interlayer distance, (2) our T c value is higher than previously reported maximum value for Pt doping in the Fe site, (3) both the normal-state in-plane resistivity and out-of-plane resistivity change from non-metallic to metallic behavior with increasing doping concentration and T c, and (4) the transverse in-plane magnetoresistance (MRab) changes from linear-field dependence to quadratic behavior upon increasing T c. For La-doped compound with the highest T c (~35 K), upper critical fields (Hc2ab , Hc2c ), coherence lengths (ξ ab, ξ c), and in-plane penetration depth (λ ab) are estimated. We discuss the relationship between chemical doping, interlayer distance, and physical properties in this system.

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

2017-03-31

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

Gene doping: an overview and current implications for athletes.

Science.gov (United States)

van der Gronde, Toon; de Hon, Olivier; Haisma, Hidde J; Pieters, Toine

2013-07-01

The possibility of gene doping, defined as the transfer of nucleic acid sequences and/or the use of normal or genetically modified cells to enhance sport performance, is a real concern in sports medicine. The abuse of knowledge and techniques gained in the area of gene therapy is a form of doping, and is prohibited for competitive athletes. As yet there is no conclusive evidence that that gene doping has been practiced in sport. However, given that gene therapy techniques improve continuously, the likelihood of abuse will increase. A literature search was conducted to identify the most relevant proteins based on their current gene doping potential using articles from Pubmed, Scopus and Embase published between 2006 and 2011. The final list of selected proteins were erythropoietin, insulin-like growth factor, growth hormone, myostatin, vascular endothelial growth factor, fibroblast growth factor, endorphin and enkephalin, α actinin 3, peroxisome proliferator-activated receptor-delta (PPARδ) and cytosolic phosphoenolpyruvate carboxykinase (PEPCK-C). We discuss these proteins with respect to their potential benefits, existing gene therapy experience in humans, potential risks, and chances of detection in current and future anti-doping controls. We have identified PPARδ and PEPCK-C as having high potential for abuse. But we expect that for efficiency reasons, there will be a preference for inserting gene target combinations rather than single gene doping products. This will also further complicate detection.

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

International Nuclear Information System (INIS)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-01-01

SnO 2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO 2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO 2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO 2 , were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO 2 single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO 2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

Science.gov (United States)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-02-01

SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Optically enhanced nuclear cross polarization in acridine-doped fluorene

Energy Technology Data Exchange (ETDEWEB)

Oshiro, C.M.

1982-06-01

The objective of this work has been to create large polarizations of the dilute /sup 13/C nuclei in the solid state. The idea was to create /sup 1/H polarizations larger than Boltzmann and to use the proton enhanced nuclear induction spectroscopy cross polarization technique to then transfer this large polarization to the /sup 13/C spin system. Optical Nuclear Polarization (ONP) of acridine-doped fluorene single crystals was studied. In addition, ONP of powdered samples of the acridine-doped fluorene was studied. In general, many compounds do not crystallize easily or do not form large crystals suitable for NMR experiments. Powdered, amorphous and randomly dispersed samples are generally far more readily available than single crystals. One objective of this work has been to (first) create large /sup 1/H polarizations. Although large optical proton polarizations in single crystals have been reported previously, optically generated polarizations in powdered samples have not been reported. For these reasons, ONP studies of powdered samples of the acridine-doped fluorene were also undertaken. Using ONP in combination with the proton enhanced nuclear induction spectroscopy experiment, large /sup 13/C polarizations have been created in fluorene single crystals. These large /sup 13/C polarizations have permitted the determination of the seven incongruent chemical shielding tensors of the fluorene molecule. Part 2 of this thesis describes the proton enhanced nuclear induction spectroscopy experiment. Part 3 describes the ONP experiment. Part 4 is a description of the experimental set-up. Part 5 describes the data analysis for the determination of the chemical shielding tensors. Part 6 presents the results of the ONP experiments performed in this work and the chemical shielding tensors determined.

Optically enhanced nuclear cross polarization in acridine-doped fluorene

International Nuclear Information System (INIS)

Oshiro, C.M.

1982-06-01

The objective of this work has been to create large polarizations of the dilute 13 C nuclei in the solid state. The idea was to create 1 H polarizations larger than Boltzmann and to use the proton enhanced nuclear induction spectroscopy cross polarization technique to then transfer this large polarization to the 13 C spin system. Optical Nuclear Polarization (ONP) of acridine-doped fluorene single crystals was studied. In addition, ONP of powdered samples of the acridine-doped fluorene was studied. In general, many compounds do not crystallize easily or do not form large crystals suitable for NMR experiments. Powdered, amorphous and randomly dispersed samples are generally far more readily available than single crystals. One objective of this work has been to (first) create large 1 H polarizations. Although large optical proton polarizations in single crystals have been reported previously, optically generated polarizations in powdered samples have not been reported. For these reasons, ONP studies of powdered samples of the acridine-doped fluorene were also undertaken. Using ONP in combination with the proton enhanced nuclear induction spectroscopy experiment, large 13 C polarizations have been created in fluorene single crystals. These large 13 C polarizations have permitted the determination of the seven incongruent chemical shielding tensors of the fluorene molecule. Part 2 of this thesis describes the proton enhanced nuclear induction spectroscopy experiment. Part 3 describes the ONP experiment. Part 4 is a description of the experimental set-up. Part 5 describes the data analysis for the determination of the chemical shielding tensors. Part 6 presents the results of the ONP experiments performed in this work and the chemical shielding tensors determined

Experimental demonstration of all-optical weak magnetic field detection using beam-deflection of single-mode fiber coated with cobalt-doped nickel ferrite nanoparticles.

Science.gov (United States)

Pradhan, Somarpita; Chaudhuri, Partha Roy

2015-07-10

We experimentally demonstrate single-mode optical-fiber-beam-deflection configuration for weak magnetic-field-detection using an optimized (low coercive-field) composition of cobalt-doped nickel ferrite nanoparticles. Devising a fiber-double-slit type experiment, we measure the surrounding magnetic field through precisely measuring interference-fringe yielding a minimum detectable field ∼100  mT and we procure magnetization data of the sample that fairly predicts SQUID measurement. To improve sensitivity, we incorporate etched single-mode fiber in double-slit arrangement and recorded a minimum detectable field, ∼30  mT. To further improve, we redefine the experiment as modulating fiber-to-fiber light-transmission and demonstrate the minimum field as 2.0 mT. The device will be uniquely suited for electrical or otherwise hazardous environments.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

2011-01-01

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The Anti-Doping Movement.

Science.gov (United States)

Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

2016-03-01

Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

Doped Organic Transistors.

Science.gov (United States)

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Crystal growth, characterization and theoretical studies of alkaline earth metal-doped tetrakis(thiourea)nickel(II) chloride.

Science.gov (United States)

Agilandeshwari, R; Muthu, K; Meenatchi, V; Meena, K; Rajasekar, M; Aditya Prasad, A; Meenakshisundaram, S P

2015-02-25

The influence of Sr(II)-doping on the properties of tetrakis(thiourea)nickel(II) chloride (TTNC) has been described. The reduction in the intensity observed in powder X-ray diffraction of doped specimen and slight shifts in vibrational frequencies of doped specimens confirm the lattice stress as a result of doping. Surface morphological changes due to doping of the Sr(II) are observed by scanning electron microscopy. The incorporation of metal into the host crystal lattice was confirmed by energy dispersive X-ray spectroscopy. Lattice parameters are determined by single crystal XRD analysis. The thermogravimetric and differential thermal analysis studies reveal the purity of the materials and no decomposition is observed up to the melting point. The nonlinear optical properties of the doped and undoped specimens were studied. Theoretical calculations were performed using the Density functional theory (DFT) method with B3LYP/LANL2DZ as the basis set. The molecular geometry and vibrational frequencies of TTNC in the ground state were calculated and the observed structural parameters of TTNC are compared with parameters obtained from single crystal X-ray studies. The atomic charge distributions are obtained by Mulliken charge population analysis. The first-order molecular hyperpolarizability, polarizability and dipole moment were derived. Copyright © 2014 Elsevier B.V. All rights reserved.

Room-temperature single-photon sources with definite circular and linear polarizations based on single-emitter fluorescence in liquid crystal hosts

International Nuclear Information System (INIS)

Winkler, Justin M; Lukishova, Svetlana G; Bissell, Luke J

2013-01-01

Definite circular and linear polarizations of room-temperature single-photon sources, which can serve as polarization bases for quantum key distribution, are produced by doping planar-aligned liquid crystal hosts with single fluorescence emitters. Chiral 1-D photonic bandgap microcavities for a single handedness of circularly polarized light were prepared from both monomeric and oligomeric cholesteric liquid crystals. Fluorescent emitters, such as nanocrystal quantum dots, nitrogen vacancy color centers in nanodiamonds, and rare-earth ions in nanocrystals, were doped into these microcavity structures and used to produce circularly polarized fluorescence of definite handedness. Additionally, we observed circularly polarized resonances in the spectrum of nanocrystal quantum dot fluorescence at the edge of the cholesteric microcavity's photonic stopband. For this polarization we obtained a ∼4.9 enhancement of intensity compared to the polarization of the opposite handedness that propagates without photonic bandgap microcavity effects. Such a resonance is indicative of coupling of quantum dot fluorescence to the cholesteric microcavity mode. We have also used planar-aligned nematic liquid crystal hosts to align DiI dye molecules doped into the host, thereby providing a single-photon source of linear polarization of definite direction. Antibunching is demonstrated for fluorescence of nanocrystal quantum dots, nitrogen vacancy color centers, and dye molecules in these liquid crystal structures.

Anomalous electron doping independent two-dimensional superconductivity

Science.gov (United States)

Zhou, Wei; Xing, Xiangzhuo; Zhao, Haijun; Feng, Jiajia; Pan, Yongqiang; Zhou, Nan; Zhang, Yufeng; Qian, Bin; Shi, Zhixiang

2017-07-01

Transition metal (Co and Ni) co-doping effects are investigated on an underdoped Ca0.94La0.06Fe2As2 compound. It is discovered that electron doping from substituting Fe with transition metal (TM = Co, Ni) can trigger high-{T}{{c}} superconductivity around 35 K, which emerges abruptly before the total suppression of the innate spin-density-wave/anti-ferromagnetism (SDW/AFM) state. Remarkably, the critical temperature for the high-{T}{{c}} superconductivity remains constant against a wide range of TM doping levels. And the net electron doping density dependence of the superconducting {T}{{c}} based on the rigid band model can be nicely scaled into a single curve for Co and Ni substitutions, in stark contrast to the case of Ba(Fe1-x TM x )2As2. This carrier density independent superconductivity and the unusual scaling behavior are presumably resulted from the interface superconductivity based on the similarity with the interface superconductivity in a La2-x Sr x CuO4-La2CuO4 bilayer. Evidence of the two-dimensional character of the superfluid by angle-resolved magneto-resistance measurements can further strengthen the interface nature of the high-{T}{{c}} superconductivity.

Single-mode amplification in Yb-doped rod-type photonic crystal fibers for high brilliance lasers

DEFF Research Database (Denmark)

Poli, F.; Lægsgaard, Jesper; Passaro, D.

2009-01-01

This paper presents the effect of a low refractive index ring in the Yb-doped rod-type photonic crystal fibre core on the guided mode propagation and analyzed through a spatial and spectral amplifier model. The ring provides a higher differential overlap between the fundamental mode (FM...... to identify a proper ring characteristic that is width, position and refractive index. Then rod-type PCF designs have been optimized with a full-vector modal solver based on the finite-element method. Then, the amplification properties of the Yb-doped rod-type PCFs have been investigated by assuming a forward...

Scintillation properties of Zr co-doped Ce:(Gd, La)_2Si_2O_7 grown by the Czochralski process

International Nuclear Information System (INIS)

Murakami, Rikito; Kurosawa, Shunsuke; Shoji, Yasuhiro; Jary, Vitezslav; Ohashi, Yuji; Pejchal, Jan; Yokota, Yuui; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira

2016-01-01

(Gd_0_._7_5,Ce_0_._0_1_5,La_0_._2_3_5)_2Si_2O_7 (Ce:La-GPS) single crystals co-doped with 0, 100, 200, 500 and 1000 ppm Zr were grown by the Czochralski process, and their scintillation properties were investigated. We investigated the co-doping effect of a stable tetravalent ion in Ce:La-GPS for the first time. The scintillation decay times in the faster component were shortened with increasing the Zr concentration. While the non-co-doped sample showed ∼63 ns day time, the Zr 100, 200, 500 and 1000 ppm co-doped samples showed ∼61, ∼59, ∼57, ∼54 ns, respectively. Additionally, light output, photon nonproportional response (PNR) and other optical properties were investigated. - Highlights: • Czochralski growth of Ce:(Gd,La)_2Si_2O_7 single crystals. • Co-doping effect of a stable tetravalent ion in Ce:(Gd,La)_2Si_2O_7 system. • Photon nonproportional response of Zr co-doped Ce:(Gd,La)_2Si_2O_7.

Tuning electronic properties of In2O3 nanowires by doping control

International Nuclear Information System (INIS)

Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

2004-01-01

We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors.

Science.gov (United States)

Antić, Ž; Kuzman, S; Đorđević, V; Dramićanin, M D; Thundat, T

2017-06-01

Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy 3 + - and Tm 3 + -doped Gd 2 Ti 2 O 7 nanophosphors. Single-phase cubic Gd 2 Ti 2 O 7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of ~25 nm for Dy 3 + -doped and ~50 nm for Tm 3 + -doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy 3 + -doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm 3 + -doped Gd 2 Ti 2 O 7 under UV excitation suggesting that this material could be used as a blue phosphor. Copyright © 2016 John Wiley & Sons, Ltd.

Multi-kW single fiber laser based on an extra large mode area fiber design

Science.gov (United States)

Langner, Andreas; Such, Mario; Schötz, Gerhard; Just, Florian; Leich, Martin; Schwuchow, Anka; Grimm, Stephan; Zimer, Hagen; Kozak, Marcin; Wedel, Björn; Rehmann, Georg; Bachert, Charley; Krause, Volker

2012-02-01

The quality of Yb-doped fused bulk silica produced by sintering of Yb-doped fused silica granulates has improved greatly in the past five years [1 - 4]. In particular, the refractive index and doping level homogeneity of such materials are excellent and we achieved excellent background fiber attenuation of the active core material down to about 20 dB/km at 1200 nm. The improvement of the Yb-doped fused bulk silica has enabled the development of multi-kW fiber laser systems based on a single extra large multimode laser fiber (XLMA fiber). When a single active fiber is used in combination with the XLMA multimode fiber of 1200 μm diameter simple and robust high power fiber laser setups without complex fiber coupling and fiber combiner systems become possible. In this papper, we will discuss in detail the development of the core material based on Yb-doped bulk silica and the characterization of Yb-doped fibers with different core compositions. We will also report on the excellent performance of a 4 kW fiber laser based on a single XLMA-fiber and show the first experimental welding results of steel sheets achieved with such a laser.

Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb

International Nuclear Information System (INIS)

S Anikeev; D Donetsky; G Belenky; S Luryl; CA Wang; DA Shiau; M Dashiell; J Beausang; G Nichols

2004-01-01

Radiative coefficient (B) is a fundamental recombination parameter which is of importance for a variety of optoelectronic minority carrier devices. Radiative recombination was comprehensively studied for wide-bandgap III-V compounds, while for 0.5-0.6 eV materials experimental data are quite limited and demonstrate significant spreading. Here we report excess carrier lifetime in isotype double heterostructures (DHs) of 0.54-eV p-GaInAsSb capped with p-AlGaAsSb, and grown lattice-matched to GaSb. Lifetime was measured by time-resolved photoluminescence (dynamic lifetime) as well as by optical response to sinusoidal excitation (static lifetime). Wide range of GaInAsSb layer thickness was used to separate contributions from interface and radiative recombination processes. Radiative coefficient and recombination velocity at GaInAsSb/AlGaAsSb heterointerface were determined. Temperature dependence of lifetime demonstrated significant contribution of radiative effects to the total recombination

A DFT study of arsine adsorption on palladium doped graphene: Effects of palladium cluster size

International Nuclear Information System (INIS)

Kunaseth, Manaschai; Mudchimo, Tanabat; Namuangruk, Supawadee; Kungwan, Nawee; Promarak, Vinich; Jungsuttiwong, Siriporn

2016-01-01

Graphical abstract: The relationship between charge difference and adsorption strength demonstrates that charge migration from Pd_n-SDG to AsH_x significantly enhanced adsorption strength, the Pd_6 clusters doped SDG with a steep slope is recommended as a superior adsorbent material for AsH_3 removal from gas stream. - Highlights: • Pd atom and Pd clusters bind strongly onto the defective graphene surface. • Larger size of Pd cluster adsorbs arsine and its hydrogenated products stronger. • Order of adsorption strength on Pd_n doped graphene: As > AsH > AsH_2 > > AsH_3. • Charge migration characterizes the strong adsorption of AsH_2, AsH, and As. • Pd cluster doped graphene is thermodynamically preferable for arsine removal. - Abstract: In this study, we have investigated the size effects of palladium (Pd) doped single-vacancy defective graphene (SDG) surface to the adsorption of AsH_3 and its dehydrogenated products on Pd using density functional theory calculations. Here, Pd cluster binding study revealed that Pd_6 nanocluster bound strongest to the SDG surface, while adsorption of AsH_x (x = 0–3) on the most stable Pd_n doped SDG showed that dehydrogenated arsine compounds adsorbed onto the surface stronger than the pristine AsH_3 molecule. Charge analysis revealed that considerable amount of charge migration from Pd to dehydrogenated arsine molecules after adsorption may constitute strong adsorption for dehydrogenated arsine. In addition, study of thermodynamic pathways of AsH_3 dehydrogenation on Pd_n doped SDG adsorbents indicated that Pd cluster doping on SDG adsorbent tends to be thermodynamically favorable for AsH_3 decomposition than the single-Pd atom doped SDG. Hence, our study has indicated that Pd_6 clusters doped SDG is more advantageous as adsorbent material for AsH_3 removal.

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

2007-01-01

Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

Energy Technology Data Exchange (ETDEWEB)

Liang, Qi, E-mail: alfred_02030210@163.com; Wei, Yuan

2014-03-15

Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model.

Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

International Nuclear Information System (INIS)

Liang, Qi; Wei, Yuan

2014-01-01

Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model

Insight into destabilization mechanism of Mg-based hydrides interstitially co-doped with nonmetals: a DFT study

Science.gov (United States)

Wu, Zhen; Zhu, Luying; Yang, Fusheng; Zhang, Zaoxiao; Nyamsi, Serge N.

2018-04-01

Mg-based metal hydride is one of the most promising materials for hydrogen energy storage. However, the high thermal stability due to strong bonding effects between the atoms limits its practical application. In order to reduce the thermal stability, a method of doping double nonmetals into Mg-based system was proposed in this study. The density functional theory (DFT) calculation results showed that the thermal stabilities of both the B-N co-doped Mg-based alloy and its hydride are reduced compared with pure Mg-based system. The relative formation enthalpies of the alloy and its hydride are 0.323 and 0.595 eV atom-1, respectively. The values are much higher than those for either singly B- or N-doped Mg-based system. The more significant destabilization by doping double nonmetal elements than single element is mainly attributed to a dual effect in weakening Mg-Ni/NiH4 bonds, caused by criss-cross interactions between B-Ni and N-Mg bonds.

Sodium doping in ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

2015-01-12

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

LD-cladding-pumped 50 pm linewidth Tm 3+ -doped silica fiber laser.

Science.gov (United States)

Yunjun, Zhang; Baoquan, Yao; Youlun, Ju; Hui, Zhou; Yuezhu, Wang

2008-05-26

We report on a Tm(3+)-doped fiber laser source operating at 1936.4 nm with a very narrow linewidth (50 pm) laser output. Up to 2.4 W cw laser power was obtained from an 82 cm long Tm(3+)-doped multimode-core fiber cladding pumped by a 792 nm laser diode (LD). The fiber laser cavity included a high-reflective dichroic and a low-reflective FBG output coupler. The multimode fiber Bragg grating (FBG) transmission spectrum and output laser spectrum were measured. By adjusting the distance between the dichroic and the Tm(3+)-doped fiber end, the multipeak laser spectrum changed to a single-peak laser spectrum.

Synthesis and characterization of europium doped LiF phosphor

Energy Technology Data Exchange (ETDEWEB)

Villalobos, M. L.; Vallejo, M. A.; Sosa A, M. [Universidad de Guanajuato, Division de Ciencias e Ingenierias, Loma del Bosque No. 103, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico); Diaz T, L. A., E-mail: villaloboscm2010@licifug.ugto.mx [Centro de Investigaciones en Optica, A. C., Loma del Bosque No. 115, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico)

2015-10-15

LiF with different dopants has been one of the most investigated materials to use as thermoluminescent dosimeter. In this paper, we present the preparation method, the characterization and the thermoluminescent response of Eu doped LiF irradiated with X-rays. Pure and Eu doped LiF samples with different dopant concentration (0, 0.25, 0.5, 0.75 and 1 % mol) were synthesized using the precipitation method. The samples were structurally characterized by X-ray diffraction (XRD), the diffraction patterns showed a main cubic crystalline structure and a secondary hexagonal structure. The photoluminescence spectrum exhibited four well defined peaks characteristic of the Eu{sup 3+} ion. Thermoluminescent (Tl) glow curves of x-ray irradiated samples showed a well-defined single peak around 200 degrees C, except for the pure and 0.25% Eu doped samples. (Author)

Current Status of Doping in Japan Based on Japan Anti-Doping Disciplinary Panels of the Japan Anti-Doping Agency (JADA): A Suggestion on Anti-Doping Activities by Pharmacists in Japan.

Science.gov (United States)

Imanishi, Takashi; Kawabata, Takayoshi; Takayama, Akira

2017-01-01

In 2009, the Japan Anti-Doping Agency (JADA) established the "Sports Pharmacist Accreditation Program" to prevent doping in sports. Since then, anti-doping activities in Japan have been attracting attention. In this study, we investigated research about the current status of doping from 2007 to 2014 in Japan to make anti-doping activities more concrete, and we also discussed future anti-doping activities by pharmacists. In Japan, bodybuilding was the sporting event with the highest number and rate of doping from 2007 to 2014. Many of the positive doping cases were detected for class S1 (anabolic agents), S5 (diuretics and masking agents), and S6 (stimulants). Within class S1, supplements were the main cause of positive doping. Within class S5, medicines prescribed by medical doctors were the main cause of positive doping. Within class S6, non-prescription medicines (e.g., OTC) were the main cause of positive doping. When we looked at the global statistics on doping, many of the positive doping cases were detected for class S1. On comparing the Japanese statistics with the global statistics, the rate of positive doping caused by class S1 was significantly lower, but that caused by classes S5 and S6 was significantly higher in Japan than in the world. In conclusion, pharmacists in Japan should pay attention to class S1, S5, and S6 prohibited substances and to the sport events of bodybuilding. Based on this study, sports pharmacists as well as common pharmacists should suggest new anti-doping activities to prevent doping in the future.

Some aspects of hydrogen plasma treatment of anti-modulation doped near surface GaAs/AlGaAs single quantum well structures

International Nuclear Information System (INIS)

Bumai, Yu.A.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Nakov, V.; Cheng, T.S.

1999-01-01

The MBE grown anti-modulation doped GaAs/AlGaAs structures with near surface single quantum wells were exposed to a DC hydrogen plasma (∼400 eV) and investigated using PL, PLE and PR spectroscopy at 5 K. Strong acceptor related free to bound transition (FB) dominates for quantum well related PL but excitonic features are still observed in PLE spectra. After hydrogen plasma treatment the PL intensity of FB transition from quantum well was strongly increased for above AlGaAs band gap excitation and was unchanged for below AlGaAs one. These results are consistent with atomic hydrogen passivation of deep defects in AlGaAs barriers. At the same time radiative excitonic recombination was quenched by hydrogenation. PLE and PR spectra indicate on a strong increase of electric field in subsurface region of the structure after hydrogenation. The increase of electric field in anti-modulation doped structure after hydrogen plasma treatment is supposed to be due to passivation by atomic hydrogen of surface states that leads to unpinning of Fermi level from mid gap to carbon acceptor level position in GaAs cap layer. It causes the further band bending and surface electric field increase that strongly suppress excitonic recombination in near surface quantum wells

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

2018-01-01

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi

2018-01-18

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

International Nuclear Information System (INIS)

Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

2011-01-01

Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Doping with lead of single crystals of solid solutions of Sbsub(1,5)Bisub(0,5)Tlsub(3)-Bisub(2)Sesub(3)

International Nuclear Information System (INIS)

Abrikosov, N.Kh.; Ivanova, L.D.; Polikarpova, N.V.; Galechyan, M.G.

1984-01-01

By the Czochralski method with liquid phase additional feeding single crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system with 0, 10 and 15 mol.% of Bi 2 Se 3 content doped with lead up to 1.37 at/cm 3 are grown. Lead content in crystals and alloys is determined by the atom-abmethod using the scale of standard solutions. It has been found that the effective coefficient of lead distribution in investigated solutions is approximately 0.5. It is shown that lead addition leads to increase of electric conductivity and heat conductivity and decrease of thermoelectric coeffcient at the expense of current carriers concentration growth, the lead in crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system being a single charge acceptor

Donor impurity self-compensation by neutral complexes in bismuth doped lead telluride

International Nuclear Information System (INIS)

Ravich, Yu.I.; Nemov, S.A.; Proshin, V.I.

1994-01-01

Self-compensation is calculated of impurity doping action in semiconductors of the A 4 B 6 type by neutral complexes, consisting of a vacancy and two impurity atoms. Complexes entropy is estimated and the thermodynamic potential is minimized in the concentration of single two-charge vacancies and complexes. Calculation results are compared with experimental data, obtained when lead telluride doping by bismuth. Account for complex formation improves agreement theory with experiment. 4 refs., 1 fig

Single-mode biological distributed feedback lasers based on vitamin B2 doped gelatin

DEFF Research Database (Denmark)

Vannahme, Christoph; Maier-Flaig, F.; Lemmer, U.

Biological second-order distributed feedback (DFB) lasers are presented. Riboflavin (vitamin B2) doped gelatin as active material is spin-coated onto nanoimprinted polymer with low refractive index. DFB grating periods of 368 nm and 384 nm yield laser emission at 543 nm and 562 nm, respectively....

Thermal, dielectric studies on pure and amino acid ( L-glutamic acid, L-histidine, L-valine) doped KDP single crystals

Science.gov (United States)

Kumaresan, P.; Moorthy Babu, S.; Anbarasan, P. M.

2008-05-01

Amino acids ( L-glutamic acid, L-histidine, L-valine) doped potassium dihydrogen phospate crystals are grown by solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mol% to 10 mol%. The solubility data for all dopants concentration were determined. There is variation in pH value and hence, there is habit modification of the grown crystals were characterized with UV-VIS, FT-IR studies, SHG trace elements and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. UV-Visible spectra confirm the improvement in the transparency of these crystals on doping metal ions. FT-IR spectra reveal strong absorption band between 1400 and 1600 cm -1 for metal ion doped crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material and it also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

Optical, thermal and magnetic studies of pure and cobalt chloride doped L-alanine cadmium chloride

Energy Technology Data Exchange (ETDEWEB)

Benila, B.S., E-mail: benjane.benila@gmail.com [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India); Bright, K.C. [Department of Physics, St. John' s College, Anchal, Kollam 691 306 (India); Delphine, S. Mary [Department of Physics, Holy Cross College (Autonomous), Nagercoil 629 004 (India); Shabu, R. [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India)

2017-03-15

Single crystals of L-alanine cadmium chloride (LACC) and cobalt chloride (Co{sup 2+}) doped LACC have been grown by the slow evaporation solution growth technique. The grown crystals were subjected to various characterizations such as powder XRD, SXRD, FTIR, UV–vis, EDAX, TG/DTA, VSM, Dielectric and Second Harmonic Generation (SHG) measurements. The lattice parameters of the grown crystals were determined by single crystal X-ray analysis. EDAX analysis confirms the presence of Co{sup 2+} ion in the host material. The functional group and optical behavior of the crystals were identified from FTIR and UV-vis spectrum analysis. Electrical parameters such as dielectric constant, dielectric loss have been studied. The thermal stability of the compound was found out using TGA/DTA analysis. Second Harmonic Generation of the samples was confirmed by Kurtz-Perry powder technique. Magnetic properties of the crystals studied by VSM were also reported. The encouraging results show that the cobalt chloride doped LACC crystals have greater potential applications in optical devices. - Graphical abstract: Fig (a) and (b) shows the transparent, stable single crystals of pure and doped crystals were obtained using slow evaporation technique. The sizes of pure and doped crystals are 20×9×2 mm{sup 3} and 18×15×1 mm{sup 3} respectively. Fig (c) is the Hysteresis loop traced at room temperature for the pure and doped crystals explains the soft ferromagnetic nature of the doped crystal. The provision for changing the value of coercivity can be used for security, switching and sensing applications. - Highlights: • Defect free crystals of pure and Co{sup 2+} ion doped L-alanine cadmium chloride were grown. • The optical, dielectric and magnetic properties of pure crystals were enhanced by adding Co{sup 2+} ion. • High optical transmittance was obtained in the entire visible and IR region. • Addition of dopant to the pure crystal altered the coercivity. • Low dielectric

Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

International Nuclear Information System (INIS)

Carcelen, V.; Rodriguez-Fernandez, J.; Dieguez, E.; Hidalgo, P.

2010-01-01

The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53x10 8 Ω cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71x10 5 Ω cm).

Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y. [Department of Physics, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501 (Japan)

2014-02-20

SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Effect of co-doping of sodium on the thermoluminescence dosimetry properties of copper-doped zinc lithium borate glass system

International Nuclear Information System (INIS)

Saidu, A.; Wagiran, H.; Saeed, M.A.; Alajerami, Y.S.M.; Kadir, A.B.A.

2016-01-01

The effect of sodium as a co-dopant on the thermoluminescence (TL) properties of copper-doped zinc lithium borate (ZLB: Cu) subjected to Co-60 gamma radiation is reported in this study. TL intensity is enhanced with the introduction of sodium in ZLB: Cu. The obtained glow curve is simple with a single peak. The annealing procedure and the best heating rate for the proposed thermoluminescent dosimeter (TLD) are established, and the phosphor is reusable. The TL response within the dose range of 0.5–1000 Gy is investigated. The results show that the thermal fading behaviour is improved significantly. - Highlights: • Dosimetry properties of an improved TL dosimeter. • The dosimeter is made of lithium borate, modified with ZnO, doped with CuO and co-doped with Na 2 O. • With addition of Na to Cu in the ZLB host, TL yield and sensitivity has significantly enhanced. • The fading behaviour has also been minimized significantly. • The new material is also characterized with the linear dose response, and good reproducibility behaviour.

Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

Directory of Open Access Journals (Sweden)

Lin Li

2014-01-01

Full Text Available Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS quantum dot solar cells (QDSCs are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion, open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

Inhomogeneous ozone doping and heat induced defects in graphene studied by infrared near-field microscopy

Science.gov (United States)

Wang, Wenjie; Zhang, Jiawei; Deng, Haiming; Liu, Megnkun; Xu, Du

With the potential use of surface plasmon such as transfer data many orders faster than traditional wires, it has been very popular in research. The fact is that the wavelength of of plasmon is much shorter than the one of free space radiation. The UV ozone doping level can be fine controlled in room temperature creating selected plasmon circuit. We study inhomogeneous graphene plasmonics in ozone doped graphene using scattering-type scanning near-field infrared microscopy and spectroscopy. The single layer and bilayer graphene are doped with different dosage of ozone under UV exposure, which lead to surface inhomogeneity and inhomogeneous graphene plasmon polarition excitation under tip. After annealing the ozone doped graphene in air, the inhomogeneous doping induced plasmons disappear, together with the occurrence of local defects after high temperature annealing.

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

Science.gov (United States)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

First-principles study on silicon atom doped monolayer graphene

Science.gov (United States)

Rafique, Muhammad; Shuai, Yong; Hussain, Nayyar

2018-01-01

This paper illustrates the structural, electronic and optical properties of individual silicon (Si) atom-doped single layer graphene using density functional theory method. Si atom forms tight bonding with graphene layer. The effect of doping has been investigated by varying the concentration of Si atoms from 3.125% to 9.37% (i.e. From one to three Si atoms in 4 × 4 pure graphene supercell containing 32 carbon atoms), respectively. Electronic structure, partial density of states (PDOS) and optical properties of pure and Si atom-doped graphene sheet were calculated using VASP (Vienna ab-initio Simulation Package). The calculated results for pure graphene sheet were then compared with Si atom doped graphene. It is revealed that upon Si doping in graphene, a finite band gap appears at the high symmetric K-point, thereby making graphene a direct band gap semiconductor. Moreover, the band gap value is directly proportional to the concentration of impurity Si atoms present in graphene lattice. Upon analyzing the optical properties of Si atom-doped graphene structures, it is found that, there is significant change in the refractive index of the graphene after Si atom substitution in graphene. In addition, the overall absorption spectrum of graphene is decreased after Si atom doping. Although a significant red shift in absorption is found to occur towards visible range of radiation when Si atom is substituted in its lattice. The reflectivity of graphene improves in low energy region after Si atom substitution in graphene. These results can be useful for tuning the electronic structure and to manipulate the optical properties of graphene layer in the visible region.

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

Energy Technology Data Exchange (ETDEWEB)

Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

Science.gov (United States)

Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Rational Design of Single Molybdenum Atoms Anchored on N-Doped Carbon for Effective Hydrogen Evolution Reaction.

Science.gov (United States)

Chen, Wenxing; Pei, Jiajing; He, Chun-Ting; Wan, Jiawei; Ren, Hanlin; Zhu, Youqi; Wang, Yu; Dong, Juncai; Tian, Shubo; Cheong, Weng-Chon; Lu, Siqi; Zheng, Lirong; Zheng, Xusheng; Yan, Wensheng; Zhuang, Zhongbin; Chen, Chen; Peng, Qing; Wang, Dingsheng; Li, Yadong

2017-12-11

The highly efficient electrochemical hydrogen evolution reaction (HER) provides a promising pathway to resolve energy and environment problems. An electrocatalyst was designed with single Mo atoms (Mo-SAs) supported on N-doped carbon having outstanding HER performance. The structure of the catalyst was probed by aberration-corrected scanning transmission electron microscopy (AC-STEM) and X-ray absorption fine structure (XAFS) spectroscopy, indicating the formation of Mo-SAs anchored with one nitrogen atom and two carbon atoms (Mo 1 N 1 C 2 ). Importantly, the Mo 1 N 1 C 2 catalyst displayed much more excellent activity compared with Mo 2 C and MoN, and better stability than commercial Pt/C. Density functional theory (DFT) calculation revealed that the unique structure of Mo 1 N 1 C 2 moiety played a crucial effect to improve the HER performance. This work opens up new opportunities for the preparation and application of highly active and stable Mo-based HER catalysts. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

International Nuclear Information System (INIS)

Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

2014-01-01

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

Antimony doped cadmium selenium nanobelts with enhanced electrical and optoelectrical properties

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lijie [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Nanomaterials and Chemistry Key Laboratory, Wenzhou University, Wenzhou 325027 (China); Yu, Hongfei; Cao, Wei; Dong, Youqing; Zou, Chao; Yang, Yun [Nanomaterials and Chemistry Key Laboratory, Wenzhou University, Wenzhou 325027 (China); Huang, Shaoming, E-mail: smhuang@wzu.edu.cn [Nanomaterials and Chemistry Key Laboratory, Wenzhou University, Wenzhou 325027 (China); Dai, Ning [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Zhu, Da-Ming, E-mail: ZhuD@umkc.edu [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); University of Missouri-Kansas City, Kansas City, MO 64110 (United States)

2014-07-01

Intrinsic and Sb-doped CdSe nanobelts (NBs) were synthesized via a thermal evaporation technique. The electrical transport properties of field effect transistors (FETs) fabricated using the NBs were investigated. The results indicate that the Sb-doped NBs behave as n-type semiconductors with improved electrical conductivity (10⁻¹ to 100 S/cm) compared with the intrinsic CdSe. Photodetectors made of single NB were also fabricated and investigated. The results show that Sb-doped NB photodetectors exhibit much higher responsivity (1.5 × 10⁴ A/W) and external quantum efficiency (1.2 × 10⁵) but lower on/off current ratio (~253) and longer response time (≤40 ms). Furthermore, both electrical transport and optoelectrical properties of the as-synthesized CdSe NBs can be tuned by changing the doping concentration. The results indicate that the as-synthesized NBs are excellent building blocks for constructing electronic and optoelectronic devices.

Doping-dependent quasiparticle band structure in cuprate superconductors