Changes in W monocrystal dislocation density after electroerosion machininig

International Nuclear Information System (INIS)

Aleshina, S.A.; Khvostikova, V.D.; Zolotykh, B.N.; Marchuk, A.I.

1977-01-01

The variation of the dislocations and microhardness density in surface layers of single crystal tungsten after electro-erosion machining along the plane (100) at pulse energies of 1200, 2500, 5000 μJ and pulse duration of 1 μs has been investigated with a view to determining the optimum value of the intermediate (between processing stages) allowances in the manufacture of parts from single crystals. It is shown that the density of dislocations is determined by pulse energy and that a maximum value for all the machining conditions is observed at a depth of 20 μm, attaining original magnitude at a depth of approximately 100 μm. The microhardness varies similarly between 500-520 and 390-410 H 20

Dislocation density evolution in the process of high-temperature treatment and creep of EK-181 steel

Energy Technology Data Exchange (ETDEWEB)

Vershinina, Tatyana, E-mail: vershinina@bsu.edu.ru [Belgorod State National Research University, Pobedy street 85, Belgorod 308015 (Russian Federation); Leont' eva-Smirnova, Maria, E-mail: smirnova@bochvar.ru [Bochvar High-Technology Research Institute of Inorganic Materials, ul. Rogova 5, Moscow 123098 (Russian Federation)

2017-03-15

X-ray diffraction has been used to study the dislocation structure in ferrite-martensite high-chromium steel EK-181 in the states after heat treatment and high-temperature creep. The influence of heat treatment and stress on evolution of lath martensite structure was investigated by and electron back-scattered diffraction. The effect of nitrogen content on the total dislocation density, fraction of edge and screw dislocation segments are analyzed. - Highlights: •Fraction of edge dislocation in quenched state depends on nitrogen concentration. •Nitrogen affects the character of dislocation structure evolution during annealing. •Edge dislocations fraction influences on dislocation density after aging and creep.

Metal viscoplasticity with two-temperature thermodynamics and two dislocation densities

Science.gov (United States)

Roy Chowdhury, Shubhankar; Kar, Gurudas; Roy, Debasish; Reddy, J. N.

2018-03-01

Posed within the two-temperature theory of non-equilibrium thermodynamics, we propose a model for thermoviscoplastic deformation in metals. We incorporate the dynamics of dislocation densities-mobile and forest—that play the role of internal state variables in the formulation. The description based on two temperatures appears naturally when one recognizes that the thermodynamic system undergoing viscoplastic deformation is composed of two weakly interacting subsystems, viz. a kinetic-vibrational subsystem of the vibrating atomic lattices and a configurational subsystem of the slower degrees of freedom relating to defect motion, each with its own temperature. Starting with a basic model that involves only homogeneous deformation, a three-dimensional model for inhomogeneous viscoplasticity applicable to finite deformation is charted out in an overstress driven viscoplastic deformation framework. The model shows how the coupled evolutions of mobile and forest dislocation densities, which are critically influenced by the dynamics of configurational temperature, govern the strength and ductility of the metal. Unlike most contemporary models, the current proposal also affords a prediction of certain finer details as observed in the experimental data on stress-strain behaviour of metals and this in turn enhances the understanding of the evolving and interacting dislocation densities.

Effect of Dislocation Density on Deformation Behavior of Super Strong Bainitic Steel

Directory of Open Access Journals (Sweden)

B. Avishan

2017-02-01

Full Text Available Presence of nanoscale bainitic ferrites and high carbon retained austenites that are stable at ambient temperature within the microstructures of super strong bainitic steels makes it possible to achieve exceptional strengths and ductility properties in these groups of nanostructured steels. This article aims to study the effect of the dislocation density variations during tensile testing in ambient temperature on deformation behavior of nanostructured low temperature bainitic steels. Results indicate that dislocation absorption from bainitic ferrite subunits by surrounding retained austenite reduces the work hardening and therefore increases the formability of bainitic ferrite during deformation, which in turn results in a suitable combination of strength and ductility.

GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

Science.gov (United States)

Heidelberger, Christopher; Fitzgerald, Eugene A.

2018-04-01

Heterojunction bipolar transistors (HBTs) with GaAs0.825P0.175 bases and collectors and In0.40Ga0.60P emitters were integrated monolithically onto Si substrates. The HBT structures were grown epitaxially on Si via metalorganic chemical vapor deposition, using SiGe compositionally graded buffers to accommodate the lattice mismatch while maintaining threading dislocation density at an acceptable level (˜3 × 106 cm-2). GaAs0.825P0.175 is used as an active material instead of GaAs because of its higher bandgap (increased breakdown voltage) and closer lattice constant to Si. Misfit dislocation density in the active device layers, measured by electron-beam-induced current, was reduced by making iterative changes to the epitaxial structure. This optimized process culminated in a GaAs0.825P0.175/In0.40Ga0.60P HBT grown on Si with a DC current gain of 156. By considering the various GaAsP/InGaP HBTs grown on Si substrates alongside several control devices grown on GaAs substrates, a wide range of threading dislocation densities and misfit dislocation densities in the active layers could be correlated with HBT current gain. The effect of threading dislocations on current gain was moderated by the reduction in minority carrier lifetime in the base region, in agreement with existing models for GaAs light-emitting diodes and photovoltaic cells. Current gain was shown to be extremely sensitive to misfit dislocations in the active layers of the HBT—much more sensitive than to threading dislocations. We develop a model for this relationship where increased base current is mediated by Fermi level pinning near misfit dislocations.

Analysis of local dislocation densities in cold-rolled alloy 690 using transmission electron microscopy

International Nuclear Information System (INIS)

Ahn, Tae-Young; Kim, Sung Woo; Hwang, Seong Sik

2016-01-01

Service failure of alloy 690 in NPP has not been reported. However, some research groups reported that primary water stress corrosion cracking (PWSCC) occurred in severely cold-rolled alloy 690. Transgranular craking was also reported in coll-rolled alloy 690 with a banded structure. In order to understand the effect of cold rolling on the cracking of alloy 690, many research groups have focused on the local strain and the cracked carbide induced by cold-rolling, by using electron backscatter diffraction (EBSD). Transmission electron microscopy (TEM) has been widely used to characterize structural materials because this technique has superior spatial resolution and allows for the analysis of crystallographic and chemical information. The aim of the present study is to understand the mechanism of the abnormally high crack growth rate (CGR) in cold-rolled alloy 690 with a banded structure. The local dislocation density was measured by TEM to confirm the effects of local strain on the stress corrosion cracking (SCC) of alloy 690 with a banded structure. The effects of intragranular carbides on the SCC were also evaluated in this study. The local dislocation densities were directly measured using TEM to understand the effect of local strain on the SCC of Ni-based alloy 690 with a banded structure. The dislocation densities in the interior of the grains sharply increased in highly cold-rolled specimens due to intragranular carbide, which acted as a dislocation source

X-Ray and Neutron Diffraction Measurements of Dislocation Density and Subgrain Size in a Friction-Stir-Welded Aluminum Alloy

International Nuclear Information System (INIS)

Woo, Wan Chuck; Ungar, Tomas; Feng, Zhili; Kenik, Edward A.; Clausen, B.

2009-01-01

The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 x 10 14 m -2 and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 x 10 15 m -2 and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation

Work softening in nanocrystalline materials induced by dislocation annihilation

DEFF Research Database (Denmark)

Ungar, Tamas; Li, Li; Tichy, Geza

2011-01-01

Cold rolling reduces the quantity of dislocation densities in Ni–18% Fe alloys prepared by electrochemical deposition. The dislocation density evolution proposed earlier for the linearly decreasing work-hardening rate during stage III is revisited. The solution of the differential equation predicts...... that when the initial dislocation density is smaller or larger than the saturation value, then the dislocation density will increase or decrease during further plastic deformation. The predictions are verified by experimental values of dislocation densities determined by X-ray line-profile analysis....

Evaluation of dislocation density in copper and brass α deformed by XRD peak width analysis

International Nuclear Information System (INIS)

Sousa, Talita Gama de

2014-01-01

The determination of dislocation density in metallic materials has been available for many years in scientific environment. This is due to the fact that the dislocations are the main responsible for plastic deformation, which, thereafter, markedly influences the mechanical properties. In this work, the dislocation density was analyzed through peak broadening of Xray diffraction (XRD) using Convolutional Multiple Whole Profile (CMWP) program. The measurements obtained by XRD were compared with those obtained from images observed by transmission electronic microscopy (TEM). The materials used in this study were pure copper and brass α as alloy 268 (6 % Cu and 34 % Zn), deformed by rolling and ECA (equal channel angular extrusion) processes. The results indicate that the XRD is a powerful tool for the characterization of the microstructure in relation to the dislocation density, as they were consistent to the TEM measurements, and also showed good relationship with measurements of hardness. Furthermore, through the dislocation density it was possible to verify the influence of stacking fault energy (SFE) in the evolution of the copper samples deformation process and its alloy, and that the presence of texture in rolled samples did not impair the measurements obtained by XRD technique. (author)

Determination of the extinction factor in function of the density of dislocations

International Nuclear Information System (INIS)

Macias B, L.R.

1991-12-01

There are exist three basic types of crystalline lattice defects: point, line (or dislocations) and surface defects. Such defects may be incorporated intentionally to produce desired mechanical and physical properties. This report presents a FORTRAN language program to calculate the extinction factor in samples of polycrystalline copper as function of the dislocations density. (Author)

New vacancy source in ultrahigh-purity aluminium single crystals with a low dislocation density

Energy Technology Data Exchange (ETDEWEB)

Mizuno, Kaoru; Yamamoto, Satoshi [Shimane Univ., Faculty of Science and Engineering, Matsue, Shimane (Japan); Morikawa, Kimihiko [Hokkaido Univ., Institute for Low Temperature Science, Sapporo, Hokkaido (Japan); Kuga, Masanori [Kanazawa Univ., Faculty of Science, Kanazawa, Ishikawa (Japan); Okamoto, Hiroyuki [Kanazawa Univ., Faculty of Medicine, Kanazawa, Ishikawa (Japan); Hashimoto, Eiji [Hiroshima Univ., Hiroshima Synchrotron Radiation Center, Higashi-Hiroshima, Hiroshima (Japan)

2004-05-01

The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographys taken after temperature rose to 300degC from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. (author)

New vacancy source in ultrahigh-purity aluminium single crystals with a low dislocation density

International Nuclear Information System (INIS)

Mizuno, Kaoru; Yamamoto, Satoshi; Morikawa, Kimihiko; Kuga, Masanori; Okamoto, Hiroyuki; Hashimoto, Eiji

2004-01-01

The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographys taken after temperature rose to 300degC from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. (author)

The effect of length scale on the determination of geometrically necessary dislocations via EBSD continuum dislocation microscopy

Energy Technology Data Exchange (ETDEWEB)

Ruggles, T.J., E-mail: timmyruggs@gmail.com [National Institute of Aerospace, 100 Exploration Way, Hampton, VA 23666 (United States); Department of Mechanical Engineering, Brigham Young University, Provo, UT 84602 (United States); Rampton, T.M. [EDAX Inc., 91 McKee Drive, Mahwah, NJ 07430 (United States); Khosravani, A. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Fullwood, D.T. [Department of Mechanical Engineering, Brigham Young University, Provo, UT 84602 (United States)

2016-05-15

Electron backscatter diffraction (EBSD) dislocation microscopy is an important, emerging field in metals characterization. Currently, calculation of geometrically necessary dislocation (GND) density is problematic because it has been shown to depend on the step size of the EBSD scan used to investigate the sample. This paper models the change in calculated GND density as a function of step size statistically. The model provides selection criteria for EBSD step size as well as an estimate of the total dislocation content. Evaluation of a heterogeneously deformed tantalum specimen is used to asses the method. - Highlights: • The GND to SSD transition with increasing step size is analytically modeled. • Dislocation density of a microindented tantalum single crystal is measured. • Guidelines for step size selection in EBSD dislocation microscopy are presented.

Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

International Nuclear Information System (INIS)

Berecz, Tibor; Jenei, Péter; Csóré, András; Lábár, János; Gubicza, Jenő

2016-01-01

The microstructure and the dislocation density in as-quenched ferrous lath martensite were studied by different methods. The blocks, packets and variants formed due to martensitic transformation were identified and their sizes were determined by electron backscatter diffraction (EBSD). Concomitant transmission electron microscopy (TEM) investigation revealed that the laths contain subgrains with the size between 50 and 100 nm. A novel evaluation procedure of EBSD images was elaborated for the determination of the density and the space distribution of geometrically necessary dislocations from the misorientation distribution. The total dislocation density obtained by X-ray diffraction line profile analysis was in good agreement with the value determined by EBSD, indicating that the majority of dislocations formed due to martensitic transformation during quenching are geometrically necessary dislocations.

A numerical spectral approach to solve the dislocation density transport equation

International Nuclear Information System (INIS)

Djaka, K S; Taupin, V; Berbenni, S; Fressengeas, C

2015-01-01

A numerical spectral approach is developed to solve in a fast, stable and accurate fashion, the quasi-linear hyperbolic transport equation governing the spatio-temporal evolution of the dislocation density tensor in the mechanics of dislocation fields. The approach relies on using the Fast Fourier Transform algorithm. Low-pass spectral filters are employed to control both the high frequency Gibbs oscillations inherent to the Fourier method and the fast-growing numerical instabilities resulting from the hyperbolic nature of the transport equation. The numerical scheme is validated by comparison with an exact solution in the 1D case corresponding to dislocation dipole annihilation. The expansion and annihilation of dislocation loops in 2D and 3D settings are also produced and compared with finite element approximations. The spectral solutions are shown to be stable, more accurate for low Courant numbers and much less computation time-consuming than the finite element technique based on an explicit Galerkin-least squares scheme. (paper)

Hardening and softening analysis of pure titanium based on the dislocation density during torsion deformation

Energy Technology Data Exchange (ETDEWEB)

Chen, Han; Li, Fuguo, E-mail: fuguolx@nwpu.edu.cn; Li, Jinghui; Ma, Xinkai; Li, Jiang; Wan, Qiong

2016-08-01

The hardening and softening phenomena during torsion deformation are studied based on the Taylor dislocation model for pure titanium. The hardening and softening phenomena are observed through the hardness analysis during micro-indentation test and micro-hardness test. Besides, the variations of indentation size also verify the existence of hardening and softening phenomena during torsion. The variations of geometric necessary dislocations (GNDs) and statistic store dislocations (SSDs) state that the positions of high dislocation density and low dislocation density correspond to the positions of hardening and softening. The results from the microstructure, grain boundaries evolution and twins analysis indicate the twins play an important role in appearance of hardening and softening phenomena. The appearance of hardening and softening phenomena are attributed to the combination of different slip systems and twinning systems combining with the Schmid Factor (SF) analysis and the transmission electron microscope (TEM). The appearance of hardening and softening phenomena can be explained by the Taylor dislocation theory based on TEM analysis. - Highlights: • The phenomena can be characterized by Taylor dislocation model. • The variation of GNDs leads to the phenomena. • The phenomena are proved by micro-hardness, indentation hardness. • The {10-12} twin and {11-24} twin play an important role in the phenomena.

High dislocation density structures and hardening produced by high fluency pulsed-ion-beam implantation

International Nuclear Information System (INIS)

Sharkeev, Yu.P.; Didenko, A.N.; Kozlov, E.V.

1994-01-01

The paper presents a review of experimental data on the ''long-range effect'' (a change in dislocation structure and in physicomechanical properties at distances considerably greater than the ion range value in ion-implanted metallic materials and semiconductors). Our results of electron microscopy studies of high density dislocation structure in ion-implanted metallic materials with different initial states are given. It has been shown that the nature of the dislocation structure and its quantitative characteristics in the implanted metals and alloys depend on the target initial state, the ion type and energy and the retained dose. The data obtained by different workers are in good agreement both with our results and with each other as well as with the results of investigation of macroscopic characteristics (wear resistance and microhardness). It has been established that the ''long-range effect'' occurs in metallic materials with a low yield point or high plasticity level and with little dislocation density in their initial state prior to ion implantation. ((orig.))

Interaction of 〈1 0 0〉 dislocation loops with dislocations studied by dislocation dynamics in α-iron

Energy Technology Data Exchange (ETDEWEB)

Shi, X.J.; Dupuy, L. [CEA, DEN, SRMA, F-91191 Gif-sur-Yvette (France); Devincre, B. [Laboratoire d’Etude des Microstructures, CNRS-ONERA, 29 av. de la Division Leclerc, 92322 Châtillon Cedex (France); Terentyev, D. [SCK–CEN, Nuclear Materials Science Institute, Boeretang 200, B-2400 Mol (Belgium); Vincent, L. [CEA, DEN, SRMA, F-91191 Gif-sur-Yvette (France)

2015-05-15

Highlights: • Interactions between edge dislocations and radiation-induced loops were studied by dislocation dynamics. • Dislocation dynamics results are directly compared to molecular dynamics results. • The complex elementary reactions are successfully reproduced. • The critical shear stress to overcome individual loops if reproduced quantitatively. - Abstract: Interstitial dislocation loops with Burgers vector of 〈1 0 0〉 type are formed in α-iron under neutron or heavy ion irradiation. As the density and size of these loops increase with radiation dose and temperature, these defects are thought to play a key role in hardening and subsequent embrittlement of iron-based steels. The aim of the present work is to study the pinning strength of the loops on mobile dislocations. Prior to run massive Dislocation Dynamics (DD) simulations involving experimentally representative array of radiation defects and dislocations, the DD code and its parameterization are validated by comparing the individual loop–dislocation reactions with those obtained from direct atomistic Molecular Dynamics (MD) simulations. Several loop–dislocation reaction mechanisms are successfully reproduced as well as the values of the unpinning stress to detach mobile dislocations from the defects.

Density functional theory studies of screw dislocation core structures in bcc metals

DEFF Research Database (Denmark)

Frederiksen, Søren Lund; Jacobsen, Karsten Wedel

2003-01-01

The core structures of (I 11) screw dislocations in bee metals are studied using density functional theory in the local-density approximation. For Mo and Fe, direct calculations of the core structures show the cores to be symmetric with respect to 180degrees rotations around an axis perpendicular...... to symmetric core structures for all the studied metals....

Length-scale effect due to periodic variation of geometrically necessary dislocation densities

DEFF Research Database (Denmark)

Oztop, M. S.; Niordson, Christian Frithiof; Kysar, J. W.

2013-01-01

Strain gradient plasticity theories have been successful in predicting qualitative aspects of the length scale effect, most notably the increase in yield strength and hardness as the size of the deforming volume decreases. However new experimental methodologies enabled by recent developments...... of high spatial resolution diffraction methods in a scanning electron microscope give a much more quantitative understanding of plastic deformation at small length scales. Specifically, geometrically necessary dislocation densities (GND) can now be measured and provide detailed information about...... the microstructure of deformed metals in addition to the size effect. Recent GND measurements have revealed a distribution of length scales that evolves within a metal undergoing plastic deformation. Furthermore, these experiments have shown an accumulation of GND densities in cell walls as well as a variation...

Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

Science.gov (United States)

Chong, Haining; Wang, Zhewei; Chen, Chaonan; Xu, Zemin; Wu, Ke; Wu, Lan; Xu, Bo; Ye, Hui

2018-04-01

In order to suppress dislocation generation, we develop a "three-step growth" method to heteroepitaxy low dislocation density germanium (Ge) layers on silicon with the MBE process. The method is composed of 3 growth steps: low temperature (LT) seed layer, LT-HT intermediate layer as well as high temperature (HT) epilayer, successively. Threading dislocation density (TDD) of epitaxial Ge layers is measured as low as 1.4 × 106 cm-2 by optimizing the growth parameters. The results of Raman spectrum showed that the internal strain of heteroepitaxial Ge layers is tensile and homogeneous. During the growth of LT-HT intermediate layer, TDD reduction can be obtained by lowering the temperature ramping rate, and high rate deposition maintains smooth surface morphology in Ge epilayer. A mechanism based on thermodynamics is used to explain the TDD and surface morphological dependence on temperature ramping rate and deposition rate. Furthermore, we demonstrate that the Ge layer obtained can provide an excellent platform for III-V materials integrated on Si.

A novel unified dislocation density-based model for hot deformation behavior of a nickel-based superalloy under dynamic recrystallization conditions

International Nuclear Information System (INIS)

Lin, Y.C.; Wen, Dong-Xu; Chen, Xiao-Min; Chen, Ming-Song

2016-01-01

In this study, a novel unified dislocation density-based model is presented for characterizing hot deformation behaviors in a nickel-based superalloy under dynamic recrystallization (DRX) conditions. In the Kocks-Mecking model, a new softening item is proposed to represent the impacts of DRX behavior on dislocation density evolution. The grain size evolution and DRX kinetics are incorporated into the developed model. Material parameters of the developed model are calibrated by a derivative-free method of MATLAB software. Comparisons between experimental and predicted results confirm that the developed unified dislocation density-based model can nicely reproduce hot deformation behavior, DRX kinetics, and grain size evolution in wide scope of initial grain size, strain rate, and deformation temperature. Moreover, the developed unified dislocation density-based model is well employed to analyze the time-variant forming processes of the studied superalloy. (orig.)

A novel unified dislocation density-based model for hot deformation behavior of a nickel-based superalloy under dynamic recrystallization conditions

Energy Technology Data Exchange (ETDEWEB)

Lin, Y.C. [Central South University, School of Mechanical and Electrical Engineering, Changsha (China); Light Alloy Research Institute of Central South University, Changsha (China); State Key Laboratory of High Performance Complex Manufacturing, Changsha (China); Wen, Dong-Xu; Chen, Xiao-Min [Central South University, School of Mechanical and Electrical Engineering, Changsha (China); Chen, Ming-Song [Central South University, School of Mechanical and Electrical Engineering, Changsha (China); State Key Laboratory of High Performance Complex Manufacturing, Changsha (China)

2016-09-15

In this study, a novel unified dislocation density-based model is presented for characterizing hot deformation behaviors in a nickel-based superalloy under dynamic recrystallization (DRX) conditions. In the Kocks-Mecking model, a new softening item is proposed to represent the impacts of DRX behavior on dislocation density evolution. The grain size evolution and DRX kinetics are incorporated into the developed model. Material parameters of the developed model are calibrated by a derivative-free method of MATLAB software. Comparisons between experimental and predicted results confirm that the developed unified dislocation density-based model can nicely reproduce hot deformation behavior, DRX kinetics, and grain size evolution in wide scope of initial grain size, strain rate, and deformation temperature. Moreover, the developed unified dislocation density-based model is well employed to analyze the time-variant forming processes of the studied superalloy. (orig.)

Static Recovery Modeling of Dislocation Density in a Cold Rolled Clad Aluminum Alloy

Science.gov (United States)

Penlington, Alex

Clad alloys feature one or more different alloys bonded to the outside of a core alloy, with non-equilibrium, interalloy interfaces. There is limited understanding of the recovery and recrystallization behaviour of cold rolled clad aluminum alloys. In order to optimize the properties of such alloys, new heat treatment processes may be required that differ from what is used for the monolithic alloys. This study examines the recovery behaviour of a cold rolled Novelis Fusion(TM) alloy containing an AA6XXX core with an AA3003 cladding on one side. The bond between alloys appears microscopically discrete and continuous, but has a 30 microm wide chemical gradient. The as-deformed structure at the interalloy region consists of pancaked sub-grains with dislocations at the misorientation boundaries and a lower density organized within the more open interiors. X-ray line broadening was used to extract the dislocation density from the interalloy region and an equivalently deformed AA6XXX following static annealing using a modified Williamson-Hall analysis. This analysis assumed that Gaussian broadening contributions in a pseudo-Voigt function corresponded only to strain from dislocations. The kinetics of the dislocation density evolution to recrystallization were studied isothermally at 2 minute intervals, and isochronally at 175 and 205°C. The data fit the Nes model, in which the interalloy region recovered faster than AA6XXX at 175°C, but was slower at 205°C. This was most likely caused by change in texture and chemistry within this region such as over-aging of AA6XXX . Simulation of a continuous annealing and self homogenization process both with and without pre-recovery indicates a detectable, though small change in the texture and grain size in the interalloy region.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

Energy Technology Data Exchange (ETDEWEB)

Mokuno, Yoshiaki, E-mail: mokuno-y@aist.go.jp; Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2014-06-23

A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

The peculiar effect of forest dislocations on single twin layer development in zinc and beryllium single crystals

International Nuclear Information System (INIS)

Lavrentev, F.F.; Bosin, M.E.

1978-01-01

This is an investigation of the effect of different types of forest dislocation on the rate of twin layer broadening, Vsub(n), in zinc and beryllium crystals, and on the velocity of the twinning dislocation movement, Vsub(t), in zinc crystals under the action of a constant external shear stress. Increasing the forest basal dislocation density, rhosub(b), was found to result in increasing Vsub(n) and reducing Vsub(t), while increasing the forest pyramidal dislocation density, rhosub(p), causes Vsub(n) to decrease. An analysis in terms of crystal geometry shows that the dualism of the influence of the basal dislocations stems from the fact that they behave as twinning dislocation sources whose density, increasing with rhosub(b) leads to higher Vsub(n). The decrease in the effective stress, tausup(*), with increasing rhosub(b) is estimated. An analysis of the experimental data yielded the relation Vsub(t)(tausup(*)) and an estimate of the activation volume, which amounted to 6 x 10 -21 cm 3 . The close coincidence of the activation volumes as obtained from Vsub(t)(tausup(*)) and Vsub(n)(tau) suggests that the rate-controlling mechanism of the twin layer development in zinc crystals with large forest basal dislocation density is the twinning dislocation inhibition. In Be crystals, the increasing Vsub(n) effect is observed during untwinning. In Be twinned crystals, electron microscopy revealed twinning dislocations with a density of about 10 5 cm -1 at the twin boundaries and a large forest basal dislocation density inside the twin (ca. 10 8 cm -2 ). (Auth.)

Evaluation of threading dislocation densities in In- and N-face InN

International Nuclear Information System (INIS)

Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

2010-01-01

The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 μm had higher TD densities compared with films grown thicker than 1 μm. The lowest measured TD density for an In-face InN film was ∼1.5x10 10 /cm 2 for 1 μm thick films.

Effect of annealing temperature on the thermal stress and dislocation density of mc-Si ingot grown by DS process for solar cell application

Science.gov (United States)

Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

2018-04-01

90% of the solar industries are using crystalline silicon. Cost wise the multi-crystalline silicon solar cells are better compared to mono crystalline silicon. But because of the presence of grain boundaries, dislocations and impurities, the efficiency of the multi-crystalline silicon solar cells is lower than that of mono crystalline silicon solar cells. By reducing the defect and dislocation we can achieve high conversion efficiency. The velocity of dislocation motion increases with stress. By annealing the grown ingot at proper temperature we can decrease the stress and dislocation. Our simulation results show that the value of stress and dislocation density is decreased by annealing the grown ingot at 1400K and the input parameters can be implemented in real system to grow a better mc-Si ingot for energy harvesting applications.

Dislocation structure and cold resistance of low-carbon steel

International Nuclear Information System (INIS)

Gul', Yu.P.; Karnaukh, A.I.

1975-01-01

In the formation of the dislocation structure of a small (10%) deformation, the determining effect on the cold brittleness temperature is exerted by the degree of uniformity in the distribution of dislocations and microvolumes. The overall density of the dislocations is of secondary importance here. By pretreatment to achieve more uniform distribution and dispersion of particles of the excess phase, the degree of uniformity of dislocation distribution in microvolumes can be increased, the cold brittleness temperature lowered and the effect of various deformation patterns on resistance to cold counterbalanced. The formation of a cell-type dislocation structure in the case of a nonuniform distribution of relatively large particles of the excess phase and in that of a large overall density of dislocations does not result in low brittleness temperatures. The formation of a cell-type dislocation structure in the case of uniform distribution of particles of the excess phase and of a comparatively small overall density of dislocations is accompanied by a very pronounced decrease in cold brittleness temperature not only by comparison with other types of dislocation structure but also with the normalized state. At the same time the formation of this kind of a cell structure leads to a substantial (factor of 2-5) increase in resistance to plastic deformation. The prerequisites for obtaining an optimum dislocation are fulfilled either by a combination of hardening from the austenitic region and prompt, small-scale (5%) deformation, or by a combination of accelerated cooling from the austenitic region, 30-40% deformation and high yield. The size of the dislocation cells observed under the electron microscope does not exhibit - within the limits investigated - any direct effect on the cold brittleness temperature. (author)

Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

KAUST Repository

Foronda, Humberto M.; Wu, Feng; Zollner, Christian; Alif, Muhammad Esmed; Saifaddin, Burhan; Almogbel, Abdullah; Iza, Michael; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2017-01-01

temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth

Modeling of dislocation channel width evolution in irradiated metals

Science.gov (United States)

Doyle, Peter J.; Benensky, Kelsa M.; Zinkle, Steven J.

2018-02-01

Defect-free dislocation channel formation has been reported to promote plastic instability during tensile testing via localized plastic flow, leading to a distinct loss of ductility and strain hardening in many low-temperature irradiated materials. In order to study the underlying mechanisms governing dislocation channel width and formation, the channel formation process is modeled via a simple stochastic dislocation-jog process dependent upon grain size, defect cluster density, and defect size. Dislocations traverse a field of defect clusters and jog stochastically upon defect interaction, forming channels of low defect-density. Based upon prior molecular dynamics (MD) simulations and in-situ experimental transmission electron microscopy (TEM) observations, each dislocation encounter with a dislocation loop or stacking fault tetrahedron (SFT) is assumed to cause complete absorption of the defect cluster, prompting the dislocation to jog up or down by a distance equal to half the defect cluster diameter. Channels are predicted to form rapidly and are comparable to reported TEM measurements for many materials. Predicted channel widths are found to be most strongly dependent on mean defect size and correlated well with a power law dependence on defect diameter and density, and distance from the dislocation source. Due to the dependence of modeled channel width on defect diameter and density, maximum channel width is predicted to slowly increase as accumulated dose increases. The relatively weak predicted dependence of channel formation width with distance, in accordance with a diffusion analogy, implies that after only a few microns from the source, most channels observed via TEM analyses may not appear to vary with distance because of limitations in the field-of-view to a few microns. Further, examinations of the effect of the so-called "source-broadening" mechanism of channel formation showed that its effect is simply to add a minimum thickness to the channel

Dislocation density and graphitization of diamond crystals

International Nuclear Information System (INIS)

Pantea, C.; Voronin, G.A.; Zerda, T.W.; Gubicza, J.; Ungar, T.

2002-01-01

Two sets of diamond specimens compressed at 2 GPa at temperatures varying between 1060 K and 1760 K were prepared; one in which graphitization was promoted by the presence of water and another in which graphitization of diamond was practically absent. X-ray diffraction peak profiles of both sets were analyzed for the microstructure by using the modified Williamson-Hall method and by fitting the Fourier coefficients of the measured profiles by theoretical functions for crystallite size and lattice strain. The procedures determined mean size and size distribution of crystallites as well as the density and the character of the dislocations. The same experimental conditions resulted in different microstructures for the two sets of samples. They were explained in terms of hydrostatic conditions present in the graphitized samples

Dislocation evolution and properties enhancement of GH2036 by laser shock processing: Dislocation dynamics simulation and experiment

Energy Technology Data Exchange (ETDEWEB)

Ren, X.D., E-mail: renxd@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, W.F.; Ren, Y.P.; Xu, S.D.; Liu, F.F. [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yuan, S.Q. [Research Center of Fluid Machinery Engineering and Technical, Jiangsu University, Zhenjiang 212013 (China); Ren, N.F.; Huang, J.J. [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)

2016-01-27

This paper systematically investigated the effect of laser shock processing (LSP) on dislocation evolution and microstructure configuration of GH2036 alloy. Surface topography and roughness were tested by Axio CSM 700 microscope. The dislocation configurations were characterized by transmission electron microscope (TEM) and simulated by multi-scale discrete dislocation dynamics (DD) method. The results have confirmed that LSP had a beneficial effect on micro-hardness, which could be increased by 16%, and the surface topography exhibited excellent stability even after thermal cycle. The dislocation density and stress–strain response have strong dependence on laser power intensity. Reasonable agreement between DD simulation and experiments is achieved. The results showed that complex random microstructures can be observed in the shocked surface. The grain refinement mechanism of LSP GH2036 involves dislocation segmentation and twin intersections.

Characterizing short-range vs. long-range spatial correlations in dislocation distributions

International Nuclear Information System (INIS)

Chevy, Juliette; Fressengeas, Claude; Lebyodkin, Mikhail; Taupin, Vincent; Bastie, Pierre; Duval, Paul

2010-01-01

Hard X-ray diffraction experiments have provided evidence of a strongly heterogeneous distribution of dislocation densities along the axis of cylindrical ice single crystals oriented for basal slip in torsion creep. The dislocation arrangements showed a complex scale-invariant character, which was analyzed by means of statistical and multifractal techniques. A trend to decreasing autocorrelation of the dislocation distribution was observed as deformation proceeds. At low strain levels, long-range spatial correlations control the distribution, but short-range correlations in relation with cross-slip progressively prevail when strain increases. This trend was reproduced by a model based on field dislocation dynamics, a theory accounting for both long-range elastic interactions and short-range interactions through transport of dislocation densities.

Characterizing short-range vs. long-range spatial correlations in dislocation distributions

Energy Technology Data Exchange (ETDEWEB)

Chevy, Juliette, E-mail: juliette.chevy@gmail.com [Laboratoire de Glaciologie et Geophysique de l' Environnement-CNRS, 54 rue Moliere, 38402 St. Martin d' Heres (France)] [Laboratoire Science et Ingenierie des Materiaux et Procedes, Grenoble INP-CNRS-UJF, BP 75, 38402 St. Martin d' Heres Cedex (France); Fressengeas, Claude; Lebyodkin, Mikhail; Taupin, Vincent [Laboratoire de Physique et Mecanique des Materiaux, Universite Paul Verlaine-Metz/CNRS, Ile du Saulcy, 57045 Metz Cedex (France); Bastie, Pierre [Laboratoire de Spectrometrie Physique, BP 87, 38402 St. Martin d' Heres Cedex (France)] [Institut Laue Langevin, BP 156, 38042 Grenoble Cedex 9 (France); Duval, Paul [Laboratoire de Glaciologie et Geophysique de l' Environnement-CNRS, 54 rue Moliere, 38402 St. Martin d' Heres (France)

2010-03-15

Hard X-ray diffraction experiments have provided evidence of a strongly heterogeneous distribution of dislocation densities along the axis of cylindrical ice single crystals oriented for basal slip in torsion creep. The dislocation arrangements showed a complex scale-invariant character, which was analyzed by means of statistical and multifractal techniques. A trend to decreasing autocorrelation of the dislocation distribution was observed as deformation proceeds. At low strain levels, long-range spatial correlations control the distribution, but short-range correlations in relation with cross-slip progressively prevail when strain increases. This trend was reproduced by a model based on field dislocation dynamics, a theory accounting for both long-range elastic interactions and short-range interactions through transport of dislocation densities.

GaAsP solar cells on GaP/Si with low threading dislocation density

International Nuclear Information System (INIS)

Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

2016-01-01

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10"8 cm"−"2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10"6 cm"−"2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

Creep Deformation by Dislocation Movement in Waspaloy.

Science.gov (United States)

Whittaker, Mark; Harrison, Will; Deen, Christopher; Rae, Cathie; Williams, Steve

2017-01-12

Creep tests of the polycrystalline nickel alloy Waspaloy have been conducted at Swansea University, for varying stress conditions at 700 °C. Investigation through use of Transmission Electron Microscopy at Cambridge University has examined the dislocation networks formed under these conditions, with particular attention paid to comparing tests performed above and below the yield stress. This paper highlights how the dislocation structures vary throughout creep and proposes a dislocation mechanism theory for creep in Waspaloy. Activation energies are calculated through approaches developed in the use of the recently formulated Wilshire Equations, and are found to differ above and below the yield stress. Low activation energies are found to be related to dislocation interaction with γ' precipitates below the yield stress. However, significantly increased dislocation densities at stresses above yield cause an increase in the activation energy values as forest hardening becomes the primary mechanism controlling dislocation movement. It is proposed that the activation energy change is related to the stress increment provided by work hardening, as can be observed from Ti, Ni and steel results.

Dislocation Starvation and Exhaustion Hardening in Mo-alloy Nanofibers

Energy Technology Data Exchange (ETDEWEB)

Chisholm, Claire [University of California, Berkeley & LBNL; Bei, Hongbin [ORNL; Lowry, M. B. [University of California, Berkeley; Oh, Jason [Hysitron, Inc., MN; Asif, S.A. Syed [Hysitron, Inc., MN; Warren, O. [Hysitron, Inc., MN; Shan, Zhiwei [Xi' an Jiaotong University, China & Hysitron, Inc., MN; George, Easo P [ORNL; Minor, Andrew [University of California, Berkeley & LBNL

2012-01-01

The evolution of defects in Mo alloy nanofibers with initial dislocation densities ranging from 0 to 1.6 1014 m2 were studied using an in situ push-to-pull device in conjunction with a nanoindenter in a transmission electron microscope. Digital image correlation was used to determine stress and strain in local areas of deformation. When they had no initial dislocations the Mo alloy nanofibers suffered sudden catastrophic elongation following elastic deformation to ultrahigh stresses. At the other extreme fibers with a high dislocation density underwent sustained homogeneous deformation after yielding at much lower stresses. Between these two extremes nanofibers with intermediate dislocation densities demonstrated a clear exhaustion hardening behavior, where the progressive exhaustion of dislocations and dislocation sources increases the stress required to drive plasticity. This is consistent with the idea that mechanical size effects ( smaller is stronger ) are due to the fact that nanostructures usually have fewer defects that can operate at lower stresses. By monitoring the evolution of stress locally we find that exhaustion hardening causes the stress in the nanofibers to surpass the critical stress predicted for self-multiplication, supporting a plasticity mechanism that has been hypothesized to account for the rapid strain softening observed in nanoscale bcc materials at high stresses.

Microscopically derived free energy of dislocations

NARCIS (Netherlands)

Kooiman, M.; Hütter, M.; Geers, M.G.D.

2015-01-01

The dynamics of large amounts of dislocations is the governing mechanism in metal plasticity. The free energy of a continuous dislocation density profile plays a crucial role in the description of the dynamics of dislocations, as free energy derivatives act as the driving forces of dislocation

Modeling of dislocation dynamics in germanium Czochralski growth

Science.gov (United States)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

Recombination properties of dislocations in GaN

Science.gov (United States)

Yakimov, Eugene B.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

2018-04-01

The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ˜108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.

Dynamic mechanical behaviour and dislocation substructure evolution of Inconel 718 over wide temperature range

Energy Technology Data Exchange (ETDEWEB)

Lee, Woei-Shyan, E-mail: wslee@mail.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Chi-Feng [National Center for High-Performance Computing, Hsin-Shi Tainan County 744, Taiwan (China); Chen, Tao-Hsing [Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan (China); Chen, Hong-Wei [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

2011-07-25

A compressive split-Hopkinson pressure bar and transmission electron microscope (TEM) are used to investigate the mechanical behaviour and microstructural evolution of Inconel 718 at strain rates ranging from 1000 to 5000 s{sup -1} and temperatures between -150 and 550 deg. C. The results show that the flow stress increases with an increasing strain rate or a reducing temperature. The strain rate effect is particularly pronounced at strain rates greater than 3000 s{sup -1} and a deformation temperature of -150 deg. C. A significant thermal softening effect occurs at temperatures between -150 and 25 deg. C. The microstructural observations reveal that the strengthening effect in deformed Inconel 718 alloy is a result primarily of dislocation multiplication. The dislocation density increases with increasing strain rate, but decreases with increasing temperature. By contrast, the dislocation cell size decreases with increasing strain rate, but increases with increasing temperature. It is shown that the correlation between the flow stress, the dislocation density and the dislocation cell size is well described by the Bailey-Hirsch constitutive equations.

Low energy dislocation structures due to unidirectional deformation at low temperatures

DEFF Research Database (Denmark)

Hansen, Niels; Kuhlmann-Wilsdorf, D.

1986-01-01

The line energy of dislocations is {Gb2f(v)/4π} 1n(R/b) with R range of the dislocation stress field from the axis. This equation implies that quasi-uniform distributions are unstable relative to dislocation clusters in which neighboring dislocations mutually screen their stress fields, correspon......The line energy of dislocations is {Gb2f(v)/4π} 1n(R/b) with R range of the dislocation stress field from the axis. This equation implies that quasi-uniform distributions are unstable relative to dislocation clusters in which neighboring dislocations mutually screen their stress fields......, correspondingly leaving the major fraction of the volume free of dislocations. The value of R decreases in the following order: pile-ups to dipolar mats, Taylor lattices, tilt and dipolar walls to dislocation cell structures. This is the same order in which dislocation structures tend to develop with increasing...... dislocation density and hence increased dislocation interactions, leading to the corresponding energy decrease per unit length of dislocation line. Taking into consideration also the longer-range “termination stresses” of finite dislocation boundaries, and minimizing the total energy, explains the size...

A continuum theory of edge dislocations

Science.gov (United States)

Berdichevsky, V. L.

2017-09-01

Continuum theory of dislocation aims to describe the behavior of large ensembles of dislocations. This task is far from completion, and, most likely, does not have a "universal solution", which is applicable to any dislocation ensemble. In this regards it is important to have guiding lines set by benchmark cases, where the transition from a discrete set of dislocations to a continuum description is made rigorously. Two such cases have been considered recently: equilibrium of dislocation walls and screw dislocations in beams. In this paper one more case is studied, equilibrium of a large set of 2D edge dislocations placed randomly in a 2D bounded region. The major characteristic of interest is energy of dislocation ensemble, because it determines the structure of continuum equations. The homogenized energy functional is obtained for the periodic dislocation ensembles with a random contents of the periodic cell. Parameters of the periodic structure can change slowly on distances of order of the size of periodic cells. The energy functional is obtained by the variational-asymptotic method. Equilibrium positions are local minima of energy. It is confirmed the earlier assertion that energy density of the system is the sum of elastic energy of averaged elastic strains and microstructure energy, which is elastic energy of the neutralized dislocation system, i.e. the dislocation system placed in a constant dislocation density field making the averaged dislocation density zero. The computation of energy is reduced to solution of a variational cell problem. This problem is solved analytically. The solution is used to investigate stability of simple dislocation arrays, i.e. arrays with one dislocation in the periodic cell. The relations obtained yield two outcomes: First, there is a state parameter of the system, dislocation polarization; averaged stresses affect only dislocation polarization and cannot change other characteristics of the system. Second, the structure of

Generalized dynamics of moving dislocations in quasicrystals

International Nuclear Information System (INIS)

Agiasofitou, Eleni; Lazar, Markus; Kirchner, Helmut

2010-01-01

A theoretical framework for dislocation dynamics in quasicrystals is provided according to the continuum theory of dislocations. Firstly, we present the fundamental theory for moving dislocations in quasicrystals giving the dislocation density tensors and introducing the dislocation current tensors for the phonon and phason fields, including the Bianchi identities. Next, we give the equations of motion for the incompatible elastodynamics as well as for the incompatible elasto-hydrodynamics of quasicrystals. We continue with the derivation of the balance law of pseudomomentum thereby obtaining the generalized forms of the Eshelby stress tensor, the pseudomomentum vector, the dynamical Peach-Koehler force density and the Cherepanov force density for quasicrystals. The form of the dynamical Peach-Koehler force for a straight dislocation is obtained as well. Moreover, we deduce the balance law of energy that gives rise to the generalized forms of the field intensity vector and the elastic power density of quasicrystals. The above balance laws are produced for both models. The differences between the two models and their consequences are revealed. The influences of the phason fields as well as of the dynamical terms are also discussed.

Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

Science.gov (United States)

Nguyen, Thi Hoai Thu; Chen, Jyh-Chen; Hu, Chieh; Chen, Chun-Hung; Huang, Yen-Hao; Lin, Huang-Wei; Yu, Andy; Hsu, Bruce

2017-06-01

In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800 kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5 h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.

Dislocation Interactions in Olivine Revealed by HR-EBSD

Science.gov (United States)

Wallis, David; Hansen, Lars N.; Britton, T. Ben; Wilkinson, Angus J.

2017-10-01

Interactions between dislocations potentially provide a control on strain rates produced by dislocation motion during creep of rocks at high temperatures. However, it has been difficult to establish the dominant types of interactions and their influence on the rheological properties of creeping rocks due to a lack of suitable observational techniques. We apply high-angular resolution electron backscatter diffraction to map geometrically necessary dislocation (GND) density, elastic strain, and residual stress in experimentally deformed single crystals of olivine. Short-range interactions are revealed by cross correlation of GND density maps. Spatial correlations between dislocation types indicate that noncollinear interactions may impede motion of proximal dislocations at temperatures of 1000°C and 1200°C. Long-range interactions are revealed by autocorrelation of GND density maps. These analyses reveal periodic variations in GND density and sign, with characteristic length scales on the order of 1-10 μm. These structures are spatially associated with variations in elastic strain and residual stress on the order of 10-3 and 100 MPa, respectively. Therefore, short-range interactions generate local accumulations of dislocations, leading to heterogeneous internal stress fields that influence dislocation motion over longer length scales. The impacts of these short- and/or long-range interactions on dislocation velocities may therefore influence the strain rate of the bulk material and are an important consideration for future models of dislocation-mediated deformation mechanisms in olivine. Establishing the types and impacts of dislocation interactions that occur across a range of laboratory and natural deformation conditions will help to establish the reliability of extrapolating laboratory-derived flow laws to real Earth conditions.

Statistics of dislocation pinning at localized obstacles

Energy Technology Data Exchange (ETDEWEB)

Dutta, A. [S. N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098 (India); Bhattacharya, M., E-mail: mishreyee@vecc.gov.in; Barat, P. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064 (India)

2014-10-14

Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

The Weighted Burgers Vector: a new quantity for constraining dislocation densities and types using electron backscatter diffraction on 2D sections through crystalline materials.

Science.gov (United States)

Wheeler, J; Mariani, E; Piazolo, S; Prior, D J; Trimby, P; Drury, M R

2009-03-01

The Weighted Burgers Vector (WBV) is defined here as the sum, over all types of dislocations, of [(density of intersections of dislocation lines with a map) x (Burgers vector)]. Here we show that it can be calculated, for any crystal system, solely from orientation gradients in a map view, unlike the full dislocation density tensor, which requires gradients in the third dimension. No assumption is made about gradients in the third dimension and they may be non-zero. The only assumption involved is that elastic strains are small so the lattice distortion is entirely due to dislocations. Orientation gradients can be estimated from gridded orientation measurements obtained by EBSD mapping, so the WBV can be calculated as a vector field on an EBSD map. The magnitude of the WBV gives a lower bound on the magnitude of the dislocation density tensor when that magnitude is defined in a coordinate invariant way. The direction of the WBV can constrain the types of Burgers vectors of geometrically necessary dislocations present in the microstructure, most clearly when it is broken down in terms of lattice vectors. The WBV has three advantages over other measures of local lattice distortion: it is a vector and hence carries more information than a scalar quantity, it has an explicit mathematical link to the individual Burgers vectors of dislocations and, since it is derived via tensor calculus, it is not dependent on the map coordinate system. If a sub-grain wall is included in the WBV calculation, the magnitude of the WBV becomes dependent on the step size but its direction still carries information on the Burgers vectors in the wall. The net Burgers vector content of dislocations intersecting an area of a map can be simply calculated by an integration round the edge of that area, a method which is fast and complements point-by-point WBV calculations.

Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal

Science.gov (United States)

Tavakoli, Mohammad Hossein; Renani, Elahe Kabiri; Honarmandnia, Mohtaram; Ezheiyan, Mahdi

2018-02-01

In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.

Cyclic softening in annealed Zircaloy-2: Role of edge dislocation dipoles and vacancies

Science.gov (United States)

Sudhakar Rao, G.; Singh, S. R.; Krsjak, Vladimir; Singh, Vakil

2018-04-01

The mechanism of cyclic softening in annealed Zircaloy-2 at low strain amplitudes under strain controlled fatigue at room temperature is rationalized. The unusual softening due to continuous decrease in the phenomenological friction stress is found to be associated with decrease in the resistance against movement of dislocations because of the formation and easy glide of pure edge dislocation dipoles and consequent decrease in friction stress from reduction in the shear modulus. Positron annihilation spectroscopy data strongly support the increase in edge dislocation density containing jogs, from increased positron trapping and increase in annihilation lifetime.

A unified dislocation density-dependent physical-based constitutive model for cold metal forming

Science.gov (United States)

Schacht, K.; Motaman, A. H.; Prahl, U.; Bleck, W.

2017-10-01

Dislocation-density-dependent physical-based constitutive models of metal plasticity while are computationally efficient and history-dependent, can accurately account for varying process parameters such as strain, strain rate and temperature; different loading modes such as continuous deformation, creep and relaxation; microscopic metallurgical processes; and varying chemical composition within an alloy family. Since these models are founded on essential phenomena dominating the deformation, they have a larger range of usability and validity. Also, they are suitable for manufacturing chain simulations since they can efficiently compute the cumulative effect of the various manufacturing processes by following the material state through the entire manufacturing chain and also interpass periods and give a realistic prediction of the material behavior and final product properties. In the physical-based constitutive model of cold metal plasticity introduced in this study, physical processes influencing cold and warm plastic deformation in polycrystalline metals are described using physical/metallurgical internal variables such as dislocation density and effective grain size. The evolution of these internal variables are calculated using adequate equations that describe the physical processes dominating the material behavior during cold plastic deformation. For validation, the model is numerically implemented in general implicit isotropic elasto-viscoplasticity algorithm as a user-defined material subroutine (UMAT) in ABAQUS/Standard and used for finite element simulation of upsetting tests and a complete cold forging cycle of case hardenable MnCr steel family.

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Energy Technology Data Exchange (ETDEWEB)

Pozina, Galia [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Ciechonski, Rafal [GLO AB, Scheelevägen 22, SE-22363 Lund (Sweden); Bi, Zhaoxia [Solid State Physics, Lund University, Box 118, SE-22100 Lund (Sweden); Samuelson, Lars [GLO AB, Scheelevägen 22, SE-22363 Lund (Sweden); Solid State Physics, Lund University, Box 118, SE-22100 Lund (Sweden); Monemar, Bo [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Solid State Physics, Lund University, Box 118, SE-22100 Lund (Sweden); TokyoUniversity of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan)

2015-12-21

Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Science.gov (United States)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

Energy Technology Data Exchange (ETDEWEB)

Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu [Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

2016-04-11

This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

Work Hardening, Dislocation Structure, and Load Partitioning in Lath Martensite Determined by In Situ Neutron Diffraction Line Profile Analysis

Science.gov (United States)

Harjo, Stefanus; Kawasaki, Takuro; Tomota, Yo; Gong, Wu; Aizawa, Kazuya; Tichy, Geza; Shi, Zengmin; Ungár, Tamas

2017-09-01

A lath martensite steel containing 0.22 mass pct carbon was analyzed in situ during tensile deformation by high-resolution time-of-flight neutron diffraction to clarify the large work-hardening behavior at the beginning of plastic deformation. The diffraction peaks in plastically deformed states exhibit asymmetries as the reflection of redistributions of the stress and dislocation densities/arrangements in two lath packets: soft packet, where the dislocation glides are favorable, and hard packet, where they are unfavorable. The dislocation density was as high as 1015 m-2 in the as-heat-treated state. During tensile straining, the load and dislocation density became different between the two lath packets. The dislocation character and arrangement varied in the hard packet but hardly changed in the soft packet. In the hard packet, dislocations that were mainly screw-type in the as-heat-treated state became primarily edge-type and rearranged towards a dipole character related to constructing cell walls. The hard packet played an important role in the work hardening in martensite, which could be understood by considering the increase in dislocation density along with the change in dislocation arrangement.

Modeling of dislocation generation and interaction during high-speed deformation of metals

DEFF Research Database (Denmark)

Schiøtz, J.; Leffers, T.; Singh, B.N.

2002-01-01

Recent experiments by Kiritani et al. [1] have revealed a surprisingly high rate of vacancy production during highspeed deformation of thin foils of fcc metals. Virtually no dislocations are seen after the deformation. This is interpreted as evidence for a dislocation-free deformation mechanism...... at very high strain rates. We have used molecular-dynamics simulations to investigate high-speed deformation of copper crystals. Even though no pre-existing dislocation sources are present in the initial system, dislocations are quickly nucleated and a very high dislocation density is reached during...... the deformation. Due to the high density of dislocations, many inelastic interactions occur between dislocations, resulting in the generation of vacancies. After the deformation, a very high density of vacancies is observed, in agreement with the experimental observations. The processes responsible...

Dislocation dynamics of web type silicon ribbon

Energy Technology Data Exchange (ETDEWEB)

Dillon, Jr, O W; Tsai, C T; DeAngelis, R J

1987-03-01

Silicon ribbon grown by the dendritic web process passes through a rapidly changing thermal profile in the growth direction. This rapidly changing profile induces stresses which produce changes in the dislocation density in the ribbon. A viscoplastic material response function (Haasen-Sumino model) is used herein to calculate the stresses and the dislocation density at each point in the silicon ribbon. The residual stresses are also calculated.

Riemann–Cartan Geometry of Nonlinear Dislocation Mechanics

KAUST Repository

Yavari, Arash; Goriely, Alain

2012-01-01

but vanishing non-metricity. Torsion of the material manifold is identified with the dislocation density tensor of nonlinear dislocation mechanics. Using Cartan's moving frames we construct the material manifold for several examples of bodies with distributed

Hydrogen diffusion in the elastic fields of dislocations in iron

Energy Technology Data Exchange (ETDEWEB)

Sivak, A. B., E-mail: Sivak-AB@nrcki.ru; Sivak, P. A. [National Research Centre Kurchatov Institute (Russian Federation); Romanov, V. A.; Chernov, V. M. [National Research Tomsk State University (Russian Federation)

2016-12-15

The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10{sup 14} m{sup –2} in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉(110), 〈111〉(112), 〈100〉(100), and 〈100〉(110) are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.

Determination of the extinction factor in function of the density of dislocations; Determinacion del factor de extincion en funcion de la densidad de dislocaciones

Energy Technology Data Exchange (ETDEWEB)

Macias B, L.R

1991-12-15

There are exist three basic types of crystalline lattice defects: point, line (or dislocations) and surface defects. Such defects may be incorporated intentionally to produce desired mechanical and physical properties. This report presents a FORTRAN language program to calculate the extinction factor in samples of polycrystalline copper as function of the dislocations density. (Author)

Asymptotic analysis of a pile-up of regular edge dislocation walls

KAUST Repository

Hall, Cameron L.

2011-12-01

The idealised problem of a pile-up of regular dislocation walls (that is, of planes each containing an infinite number of parallel, identical and equally spaced dislocations) was presented by Roy et al. [A. Roy, R.H.J. Peerlings, M.G.D. Geers, Y. Kasyanyuk, Materials Science and Engineering A 486 (2008) 653-661] as a prototype for understanding the importance of discrete dislocation interactions in dislocation-based plasticity models. They noted that analytic solutions for the dislocation wall density are available for a pile-up of regular screw dislocation walls, but that numerical methods seem to be necessary for investigating regular edge dislocation walls. In this paper, we use the techniques of discrete-to-continuum asymptotic analysis to obtain a detailed description of a pile-up of regular edge dislocation walls. To leading order, we find that the dislocation wall density is governed by a simple differential equation and that boundary layers are present at both ends of the pile-up. © 2011 Elsevier B.V.

Asymptotic analysis of a pile-up of regular edge dislocation walls

KAUST Repository

Hall, Cameron L.

2011-01-01

The idealised problem of a pile-up of regular dislocation walls (that is, of planes each containing an infinite number of parallel, identical and equally spaced dislocations) was presented by Roy et al. [A. Roy, R.H.J. Peerlings, M.G.D. Geers, Y. Kasyanyuk, Materials Science and Engineering A 486 (2008) 653-661] as a prototype for understanding the importance of discrete dislocation interactions in dislocation-based plasticity models. They noted that analytic solutions for the dislocation wall density are available for a pile-up of regular screw dislocation walls, but that numerical methods seem to be necessary for investigating regular edge dislocation walls. In this paper, we use the techniques of discrete-to-continuum asymptotic analysis to obtain a detailed description of a pile-up of regular edge dislocation walls. To leading order, we find that the dislocation wall density is governed by a simple differential equation and that boundary layers are present at both ends of the pile-up. © 2011 Elsevier B.V.

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Energy Technology Data Exchange (ETDEWEB)

Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

2005-05-01

Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dislocation pinning effects induced by nano-precipitates during warm laser shock peening: Dislocation dynamic simulation and experiments

Science.gov (United States)

Liao, Yiliang; Ye, Chang; Gao, Huang; Kim, Bong-Joong; Suslov, Sergey; Stach, Eric A.; Cheng, Gary J.

2011-07-01

Warm laser shock peening (WLSP) is a new high strain rate surface strengthening process that has been demonstrated to significantly improve the fatigue performance of metallic components. This improvement is mainly due to the interaction of dislocations with highly dense nanoscale precipitates, which are generated by dynamic precipitation during the WLSP process. In this paper, the dislocation pinning effects induced by the nanoscale precipitates during WLSP are systematically studied. Aluminum alloy 6061 and AISI 4140 steel are selected as the materials with which to conduct WLSP experiments. Multiscale discrete dislocation dynamics (MDDD) simulation is conducted in order to investigate the interaction of dislocations and precipitates during the shock wave propagation. The evolution of dislocation structures during the shock wave propagation is studied. The dislocation structures after WLSP are characterized via transmission electron microscopy and are compared with the results of the MDDD simulation. The results show that nano-precipitates facilitate the generation of highly dense and uniformly distributed dislocation structures. The dislocation pinning effect is strongly affected by the density, size, and space distribution of nano-precipitates.

Residual carrier density in GaSb grown on Si substrates

International Nuclear Information System (INIS)

Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

2006-01-01

The relationships between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates were investigated. Dislocation density was evaluated by cross-sectional transmission electron microscopy (TEM). The TEM images indicated that the dislocation density after a 5-μm-thick GaSb film was grown was below 1 x 10 8 /cm 2 although the density near the interface between the Si substrate and the GaSb film was about 3 x 10 9 /cm 2 . Forming a dislocation loop by growing a thick GaSb layer may decrease the dislocation density. The density and mobility of the residual carrier were investigated by Hall measurement using the van der Pauw method. The residual carriers in GaSb grown on Si substrates were holes, and their densities decreased significantly from 4.2 x 10 18 to 1.4 x 10 17 /cm 3 as GaSb thickness was increased from 500 to 5500 nm

Static strain aging of Zircaloy-2: the effect of dislocation dynamics on yielding behaviour

International Nuclear Information System (INIS)

Thorpe, W.R.; Smith, I.O.

1981-01-01

The static strain-aging response of Zircaloy-2 was determined in the temperature range 293-723 K. A modified Hahn yielding model was found to provide a satisfactory description of the magnitude and shape of the yield points after aging, thereby providing information about the mobile dislocation density and the dislocation generation rate. For example, the characteristic double peak in the temperature dependence of strain aging was simplified to a single broad minimum in the mobile dislocation density over the temperature interval 500-700 K. The shape of the yield point was also found to be temperature dependent; the yield drop became less sharp at test temperatures above 648 K. This was ascribed to the inhibition of dislocation multiplication by dynamic strain aging. A kinetic law was developed by applying Snoek ordering kinetics to the process of dislocation locking and the resultant change in mobile dislocation density was then used to predict the strain-aging response as a function of aging time. The stress dependence of strain aging at 573 K was investigated at aging stresses of between 0.07 and 0.975 of the flow stress sigmasub(f). The strain-aging response increased for aging at stresses between 0.07sigmassub(f) and 0.8sigmasub(f), whereafter it declined steeply to the limit of zero at the flow stress. (Auth.)

Riemann–Cartan Geometry of Nonlinear Dislocation Mechanics

KAUST Repository

Yavari, Arash

2012-03-09

We present a geometric theory of nonlinear solids with distributed dislocations. In this theory the material manifold-where the body is stress free-is a Weitzenböck manifold, that is, a manifold with a flat affine connection with torsion but vanishing non-metricity. Torsion of the material manifold is identified with the dislocation density tensor of nonlinear dislocation mechanics. Using Cartan\\'s moving frames we construct the material manifold for several examples of bodies with distributed dislocations. We also present non-trivial examples of zero-stress dislocation distributions. More importantly, in this geometric framework we are able to calculate the residual stress fields, assuming that the nonlinear elastic body is incompressible. We derive the governing equations of nonlinear dislocation mechanics covariantly using balance of energy and its covariance. © 2012 Springer-Verlag.

Dislocation-related trap levels in nitride-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy); Meneghini, Matteo; Zanoni, Enrico [Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-05-26

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

Dislocation-related trap levels in nitride-based light emitting diodes

International Nuclear Information System (INIS)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna; Meneghini, Matteo; Zanoni, Enrico; Zhu, Dandan; Humphreys, Colin

2014-01-01

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10 9 cm −2 and a low dislocation density of 3 × 10 8 cm −2 . Three trapping levels for electrons were revealed, named A, A1, and B, with energies E A  ≈ 0.04 eV, E A1  ≈ 0.13 eV, and E B  ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

On verification of a theory in dislocation plasticity

International Nuclear Information System (INIS)

Ng, D.H.Y.; Lee, L.H.N.

1981-01-01

In the past twenty years, many attempts to unify the theories of macroplasticity and microplasticity in polycrystalline materials have been made. Several major approaches have been suggested namely: the geometrical approach, the analytical approach, the phenomenological approach and the internal variables approach. To verify the plasticity theory based on any one of the above models, detail experimental data including microstructural quantities such as dislocation density, dislocation speed, etc. are required. Unfortunately, there were some difficulties in evaluating dislocation speed and dealing with the term 'mobile fraction' of dislocation density. Therefore, an experimental verification of such plasticity theory has not been made. A dislocation velocity equation based on a thermally activated model is used. A set of plastic strain rate equations for polycrystalline materials formulated by analyzing dislocation dynamics in a statistical approach are presented. In order to evaluate the activation free energy, Gibbs' modified tetragonal distortion model is used together with some measurements obtained from electron micrographs. Experimental results on the dynamic yielding and fracture of 6061-T6 aluminum alloy tubings under biaxial loadings obtained by Ng, Delich and Lee are used. In dealing with 'mobile fraction', Gilman's suggestion is adopted. (orig./HP)

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

Science.gov (United States)

Termentzidis, Konstantinos; Isaiev, Mykola; Salnikova, Anastasiia; Belabbas, Imad; Lacroix, David; Kioseoglou, Joseph

2018-02-14

We report the thermal transport properties of wurtzite GaN in the presence of dislocations using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration are analyzed and found to considerably reduce the thermal conductivity while impacting its temperature dependence in a different manner. Isolated screw dislocations reduce the thermal conductivity by a factor of two, while the influence of edge dislocations is less pronounced. The relative reduction of thermal conductivity is correlated with the strain energy of each of the five studied types of dislocations and the nature of the bonds around the dislocation core. The temperature dependence of the thermal conductivity follows a physical law described by a T -1 variation in combination with an exponent factor that depends on the material's nature, type and the structural characteristics of the dislocation core. Furthermore, the impact of the dislocation density on the thermal conductivity of bulk GaN is examined. The variation and absolute values of the total thermal conductivity as a function of the dislocation density are similar for defected systems with both screw and edge dislocations. Nevertheless, we reveal that the thermal conductivity tensors along the parallel and perpendicular directions to the dislocation lines are different. The discrepancy of the anisotropy of the thermal conductivity grows with increasing density of dislocations and it is more pronounced for the systems with edge dislocations. Besides the fundamental insights of the presented results, these could also be used for the identification of the type of dislocations when one experimentally obtains the evolution of thermal conductivity with temperature since each type of dislocation has a different signature, or one could extract the density of dislocations with a simple measurement of thermal anisotropy.

GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LEDs

International Nuclear Information System (INIS)

Schujman, Sandra; Schowalter, Leo

2011-01-01

The objective of this project was to develop and then demonstrate the efficacy of a cost effective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this 'GaN-ready' substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded Al x Ga 1-x N layers on top. Pseudomorphic Al x Ga 1-x N epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 10 8 cm -2 while the pseudomorphic LEDs have TDD (le) 10 5 cm -2 . The resulting TDD, when grading the Al x Ga 1-x N layer all the way to pure GaN to produce a 'GaN-ready' substrate, has varied between the mid 10 8 down to the 10 6 cm -2 . These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

Influence of mobile dislocations on phase separation in binary alloys

International Nuclear Information System (INIS)

Haataja, Mikko; Leonard, Francois

2004-01-01

We introduce a continuum model to describe the phase separation of a binary alloy in the presence of mobile dislocations. The kinetics of the local composition and dislocation density are coupled through their elastic fields. We show both analytically and numerically that mobile dislocations modify the standard spinodal decomposition process, and lead to several regimes of growth. Depending on the dislocation mobility and observation time, the phase separation may be accelerated, decelerated, or unaffected by mobile dislocations. For any finite dislocation mobility, we show that the domain growth rate asymptotically becomes independent of the dislocation mobility, and is faster than the dislocation-free growth rate

Computational issues in the simulation of two-dimensional discrete dislocation mechanics

Science.gov (United States)

Segurado, J.; LLorca, J.; Romero, I.

2007-06-01

The effect of the integration time step and the introduction of a cut-off velocity for the dislocation motion was analysed in discrete dislocation dynamics (DD) simulations of a single crystal microbeam. Two loading modes, bending and uniaxial tension, were examined. It was found that a longer integration time step led to a progressive increment of the oscillations in the numerical solution, which would eventually diverge. This problem could be corrected in the simulations carried out in bending by introducing a cut-off velocity for the dislocation motion. This strategy (long integration times and a cut-off velocity for the dislocation motion) did not recover, however, the solution computed with very short time steps in uniaxial tension: the dislocation density was overestimated and the dislocation patterns modified. The different response to the same numerical algorithm was explained in terms of the nature of the dislocations generated in each case: geometrically necessary in bending and statistically stored in tension. The evolution of the dislocation density in the former was controlled by the plastic curvature of the beam and was independent of the details of the simulations. On the contrary, the steady-state dislocation density in tension was determined by the balance between nucleation of dislocations and those which are annihilated or which exit the beam. Changes in the DD imposed by the cut-off velocity altered this equilibrium and the solution. These results point to the need for detailed analyses of the accuracy and stability of the dislocation dynamic simulations to ensure that the results obtained are not fundamentally affected by the numerical strategies used to solve this complex problem.

Determining dislocation densities from the extinction effect (review)

International Nuclear Information System (INIS)

Ivanov, A.N.; Polyakov, A.M.; Skakov, Yu.A.

1987-01-01

Much attention is being given to dynamic x-ray scattering in crystals containing defects. As general diffraction theory for crystals with defects does not at present extend beyond formal expressions and there is no rigorous theory of diffraction by crystals containing dislocations, one describes extinction in a nonideal crystal via phenomenological theories. In this paper, the authors review the various methods of analyzing the dislocation structure from the integral intensities which are based on three extinction models: Darwin's extinction theory; mosaic-crystal scattering theory; and the transport equations method proposed by Stephan for Bragg geometry and Laue geometry. The most rigorous method in a theoretical respect of those covered in this review is based on Kato's extinction theory. The authors consider it necessary to devise a general theory of x-ray scattering for crystals with any type of long-range order in the displacement pattern, although this paper has dealt with some of the applications of quantum mechanics and statistical physics in describing diffraction

Dislocation dynamics in Al-Li alloys: mean jump distance and activation length of moving dislocations

International Nuclear Information System (INIS)

De Hosson, J.Th.M.; Huis Int Veld, A.

1984-01-01

It is pointed out that aluminum-lithium based alloys offer considerable promise for structural applications, especially in the aerospace industry. This promise is related to the potential for high strength in combination with a density which is lower than that found in conventional aluminum alloys. In addition, the modulus of elasticity is higher than corresponding values in conventional aluminum alloys. A nuclear magnetic resonance study of the mechanism of dislocation motion in Al-2.2 wt pct Li is reported. Information about the effective mean jump distance of mobile dislocations is provided by in situ nuclear spin relaxation measurements. The activation length of mobile dislocations has been obtained from strain-rate change experiments on Al-2.2 wt pct Li. The considered study shows that pulsed nuclear magnetic resonance is a complementary new technique for the study of moving dislocations in Al-Li alloys. 28 references

DISLOCATIONS STRUCTURE AND SCATTERING PHENOMENON IN CRYSTALLINE CELL SIZE OF 2024 AL ALLOY DEFORMED BY ONE PASS OF ECAP AT ROOM TEMPERATURE

Directory of Open Access Journals (Sweden)

M. H. Goodarzy

2014-03-01

Full Text Available Variation in microstructural features of 2024 aluminum alloy plastically deformed by equal channel angular pressing (ECAP at room temperature, was investigated by X-Ray diffraction in this work. These include dislocation density dislocation characteristic and the cell size of crystalline domains. Dislocations contrast factor was calculated using elastic constants of the alloy such as C 11, C 22 and C 44 . The effect of dislocations contrast factor on the anisotropic strain broadening of diffraction profiles was considered for measuring the microstructural features on the base of the modified Williamson-Hall and Warren-Averbach methods. Results showed that the dislocations density of the solution annealed sample increased from 4.28×10 12m-2 to 2.41×10 14m-2 after one pass of cold ECAP and the fraction of edge dislocations in the solution annealed sample increased from 43% to 74% after deformation. This means that deformation changed the overall dislocations characteristic more to edge dislocations. Also the crystalline cell size of the solution annealed sample decreased from 0.83μm to about 210nm after one pass of ECAP process at room temperature

Dislocation Structures in Creep-deformed Polycrystalline MgO

DEFF Research Database (Denmark)

Bilde-Sørensen, Jørgen

1972-01-01

dislocation segments lie in their slip or climb planes. On the basis of this structure, a model is proposed in which glide is the principal cause of deformation but the rate-limiting process, i.e. annealing of the network, is diffusion-controlled. Theoretical estimates and experimental results agree within 1...... energy of 76 ± 12 kcal/mol. The creep rate is independent of grain size. The dislocation structure was investigated by transmission electron microscopy. The total dislocation density follows the relation, σ=bG√ρ, commonly found for metals. The dislocations form a 3-dimensional network in which many...

Gradients of geometrically necessary dislocations from white beam microdiffraction

International Nuclear Information System (INIS)

Barabash, R.I.; Ice, G.E.; Pang, J.W.L.

2005-01-01

Variations in the local crystallographic orientation due to the presence of geometrically necessary dislocations and dislocation boundaries smear the distribution of intensity near Laue reflections. Here, some simple model distributions of geometrically necessary dislocations, GNDs, are used to estimate the dislocation tensor field from the intensity distribution of Laue peaks. Streaking of the Laue spots is found to be quantitatively and qualitatively distinct depending on the ratio between the absorption coefficient and the GND density gradient. In addition, different slip systems cause distinctly different Laue-pattern streaking. Experimental Laue patterns are therefore sensitive to stored dislocations and GNDs. As an example, white beam microdiffraction was applied to characterize the dislocation arrangement in a deformed polycrystalline Ni grain during in situ uniaxial tension

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

KAUST Repository

Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Liao, Che-Hao; Guo, Wenzhe; Alfaraj, Nasir; Li, Kuang-Hui; Anjum, Dalaver H.; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

KAUST Repository

Sun, Haiding

2017-12-18

We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

Direct determination of elastic strains and dislocation densities in individual subgrains in deformation structures

DEFF Research Database (Denmark)

Jakobsen, Bo; Poulsen, Henning Friis; Lienert, U.

2007-01-01

A novel synchrotron-based technique "high angular resolution 3DXRD" is presented in detail, and applied to the characterization of oxygen-free, high-conductivity copper at a tensile deformation of 2%. The position and shape in reciprocal space of 14 peaks originating from deeply embedded individual...... subgrains is reported. From this dataset the density of redundant dislocations in the individual subgrains is inferred to be below 12 × 1012 m-2 on average. It is found that the subgrains on average experience a reduction in strain of 0.9 × 10-4 with respect to the mean elastic strain of the full grain...

The relationship of dislocation and vacancy cluster with yield strength in magnetic annealed UFG 1050 aluminum alloy

Energy Technology Data Exchange (ETDEWEB)

Cao, Yiheng [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); He, Lizi, E-mail: helizi@epm.neu.edu.cn [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China); Cao, Xingzhong; Zhang, Peng; Wang, Baoyi [Key Laboratory of Nuclear Radiation and Nuclear Energy Technology, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Zhou, Yizhou [Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Ping; Cui, Jianzhong [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China)

2017-01-02

The evolutions of tensile properties and microstructures of ultrafine grained (UFG) 1050 aluminum alloy after annealing at 90–210 °C for 4 h without and with 12 T high magnetic field were investigated by tensile test, electron back scattering diffraction pattern (EBSD), transmission electron microscopy (TEM) and positron annihilation lifetime spectroscopy (PALS). When annealing temperature increases from 90 °C to 150 °C, the yield strength (YS) of UFG 1050 aluminum alloy increases, it is because that the increase in the density of vacancy clusters due to the activated monovacancies and the high angle boundaries (HABs) having more stable structures, both of them can act as effective barriers to dislocation motion during tensile deformation. When annealing at 210 °C, the YS of UFG 1050 aluminum alloy deceases, it is because that the decrease in the vacancy clusters density due to the thermally activated the vacancy clusters annihilating at sinks and the dislocation density decreases. The YS of magnetic annealed samples are lower at 90 °C and 150 °C due to the lower density of dislocations and vacancy clusters. The difference of YS between samples annealed without and with magnetic field disappears at 210 °C due to the sharply reduced strain hardening stage.

Analysis of the dislocation content in a deformed Co-based superalloy by transmission electron microscopy and X-ray diffraction

International Nuclear Information System (INIS)

Breuer, D.; Klimanek, P.; Muehle, U.; Martin, U.

1997-01-01

The present paper compares the dislocation densities as determined in a Co-based superalloy (CoNi22Cr22W14) after creep and tensile deformation by Transmission Electron Microscopy (TEM) and X-ray profile analysis (XRD). After creep tests the dislocation densities obtained by both methods are in good agreement, which is the result of a nearly homogeneous dislocation distribution. The relationship between the dislocation density and the flow stress meets the Taylor equation. After tensile deformation the dislocation densities determined by TEM and XRD differ systematically from each other, but in both cases also a Taylor relationship can be obtained. The constant α of the dislocation interaction derived by TEM is much larger than in the creep tests and also than that of the XRD, which agrees well with the creep data. The difference between the TEM and the XRD results is the consequence of the dislocation cell structure much more developed in the tensile specimens, which leads to an underestimation of the dislocation density in TEM because of overweighting the cell interior. By fitting the Fourier coefficients of the X-ray diffraction line shapes with a bimodal distribution of the defect content (composite model), dislocation densities of the cell interior can be estimated that correspond well to the TEM data. (orig.)

Investigation of dislocations in 8° off-axis 4H-SiC epilayer

International Nuclear Information System (INIS)

Rui-Xia, Miao; Yu-Ming, Zhang; Yi-Men, Zhang; Xiao-Yan, Tang; Qing-Feng, Gai

2010-01-01

This paper reports that the etching morphology of dislocations in 8° off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer. (condensed matter: structure, thermal and mechanical properties)

The evolution of internal stress and dislocation during tensile deformation in a 9Cr ferritic/martensitic (F/M) ODS steel investigated by high-energy X-rays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Guangming; Zhou, Zhangjian; Mo, Kun; Miao, Yinbin; Liu, Xiang; Almer, Jonathan; Stubbins, James F.

2015-12-01

An application of high-energy wide angle synchrotron X-ray diffraction to investigate the tensile deformation of 9Cr ferritic/martensitic (F/M) ODS steel is presented. With tensile loading and in-situ Xray exposure, the lattice strain development of matrix was determined. The lattice strain was found to decrease with increasing temperature, and the difference in Young's modulus of six different reflections at different temperatures reveals the temperature dependence of elastic anisotropy. The mean internal stress was calculated and compared with the applied stress, showing that the strengthening factor increased with increasing temperature, indicating that the oxide nanoparticles have a good strengthening impact at high temperature. The dislocation density and character were also measured during tensile deformation. The dislocation density decreased with increasing of temperature due to the greater mobility of dislocation at high temperature. The dislocation character was determined by best-fit methods for different dislocation average contrasts with various levels of uncertainty. The results shows edge type dislocations dominate the plastic strain at room temperature (RT) and 300 C, while the screw type dislocations dominate at 600 C. The dominance of edge character in 9Cr F/M ODS steels at RT and 300 C is likely due to the pinning effect of nanoparticles for higher mobile edge dislocations when compared with screw dislocations, while the stronger screw type of dislocation structure at 600 C may be explained by the activated cross slip of screw segments.

Effects of dislocations on polycrystal anelasticity

Science.gov (United States)

Sasaki, Y.; Takei, Y.; McCarthy, C.; Suzuki, A.

2017-12-01

Effects of dislocations on the seismic velocity and attenuation have been poorly understood, because only a few experimental studies have been performed [Guéguen et al., 1989; Farla et al., 2012]. By using organic borneol as a rock analogue, we measured dislocation-induced anelasticity accurately over a broad frequency range. We first measured the flow law of borneol aggregates by uniaxial compression tests under a confining pressure of 0.8 MPa. A transition from diffusion creep (n = 1) to dislocation creep (n = 5) was captured at about σ = 1 MPa (40°C-50°C). After deforming in the dislocation creep regime, sample microstructure showed irregular grain shape consistent with grain boundary migration. Next, we conducted three creep tests at σ = 0.27 MPa (diffusion creep regime), σ = 1.3 MPa and σ = 1.9 MPa (dislocation creep regime) on the same sample in increasing order, and measured Young's modulus E and attenuation Q-1 after each creep test by forced oscillation tests. The results show that as σ increased, E decreased and Q-1 increased. These changes induced by dislocations, however, almost fully recovered during the forced oscillation tests performed for about two weeks under a small stress (σ = 0.27 MPa) due to the dislocation recovery (annihilation). In order to constrain the time scale of the dislocation-induced anelastic relaxation, we further measured Young's modulus E at ultrasonic frequency before and after the dislocation creep and found that E at 106 Hz is not influenced by dislocations. Because E at 100 Hz is reduced by dislocations by 10%, the dislocation-induced anelastic relaxation occurs mostly between 102-106 Hz which is at a higher frequency than grain-boundary-induced anelasticity. To avoid dislocation recovery during the anelasticity measurement, we are now trying to perform an in-situ measurement of anelasticity while simultaneously deforming under a high stress associated with dislocation creep. The combination of persistent creep

Dislocation structure evolution and characterization in the compression deformed Mn-Cu alloy

International Nuclear Information System (INIS)

Zhong, Y.; Yin, F.; Sakaguchi, T.; Nagai, K.; Yang, K.

2007-01-01

Dislocation densities and dislocation structure arrangements in cold compressed polycrystalline commercial M2052 (Mn-20Cu-5Ni-2Fe) high damping alloy with various strains were determined in scanning mode by X-ray peak profile analysis and electron backscatter diffraction (EBSD). The results indicate that the Mn-Cu-Ni-Fe alloy has an evolution behavior quite similar to the dislocation structure in copper. The dislocation arrangement parameter shows a local minimum in the transition range between stages III and IV that can be related to the transformation of the dislocation arrangement in the cell walls from a polarized dipole wall (PDW) into a polarized tile wall (PTW) structure. This evolution is further confirmed by the results of local misorientation determined by EBSD. In addition, during deformation, the multiplication of dislocation densities in the MnCu alloy is significantly slower than that in copper, and the transition of the dislocation structure is strongly retarded in the MnCu alloy compared with copper. These results can be explained by the mechanism of elastic anisotropy on the dislocation dynamics, as the elastic anisotropy in the MnCu alloy is larger than that in copper, which can strongly retard the multiplication of the dislocation population and the transformation of the dislocation structure. These results are important for research into the plastic working behavior of Mn-Cu-Ni-Fe high damping alloy

Dislocation structure evolution in 304L stainless steel and weld joint during cyclic plastic deformation

Energy Technology Data Exchange (ETDEWEB)

Wang, Hao; Jing, Hongyang; Zhao, Lei; Han, Yongdian; Lv, Xiaoqing [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Advanced Joining Technology, Tianjin 300072 (China); Xu, Lianyong, E-mail: xulianyong@tju.edu.cn [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Advanced Joining Technology, Tianjin 300072 (China)

2017-04-06

Dislocation structures and their evolution of 304L stainless steel and weld metal made with ER308L stainless steel welding wire subjected to uniaxial symmetric strain-controlled loading and stress-controlled ratcheting loading were observed by transmission electron microscopy (TEM). The correlation between the cyclic response and the dislocation structure has been studied. The experiment results show that the cyclic behaviour of base metal and weld metal are different. The cyclic behaviour of the base metal consists of primary hardening, slight softening and secondary hardening, while the weld metal shows a short hardening within several cycles followed by the cyclic softening behaviour. The microscopic observations indicate that in base metal, the dislocation structures evolve from low density patterns to those with higher dislocation density during both strain cycling and ratcheting deformation. However, the dislocation structures of weld metal change oppositely form initial complicated structures to simple patterns and the dislocation density gradually decrease. The dislocation evolution presented during the strain cycling and ratcheting deformation is summarized, which can qualitatively explain the cyclic behaviour and the uniaxial ratcheting behaviour of two materials. Moreover, the dislocation evolution in the two types of tests is compared, which shows that the mean stress has an effect on the rate of dislocation evolution during the cyclic loading.

Influence of strain on dislocation core in silicon

Science.gov (United States)

Pizzagalli, L.; Godet, J.; Brochard, S.

2018-05-01

First principles, density functional-based tight binding and semi-empirical interatomic potentials calculations are performed to analyse the influence of large strains on the structure and stability of a 60? dislocation in silicon. Such strains typically arise during the mechanical testing of nanostructures like nanopillars or nanoparticles. We focus on bi-axial strains in the plane normal to the dislocation line. Our calculations surprisingly reveal that the dislocation core structure largely depends on the applied strain, for strain levels of about 5%. In the particular case of bi-axial compression, the transformation of the dislocation to a locally disordered configuration occurs for similar strain magnitudes. The formation of an opening, however, requires larger strains, of about 7.5%. Furthermore, our results suggest that electronic structure methods should be favoured to model dislocation cores in case of large strains whenever possible.

Method to probe the electrical activity of dislocations in non-intentionally doped n-GaN

Energy Technology Data Exchange (ETDEWEB)

Mimila-Arroyo, J., E-mail: jmimila@cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. Instituto Politecnico Nacional No 2508, Mexico D.F., CP 07360 (Mexico); Morales, E. [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. Instituto Politecnico Nacional No 2508, Mexico D.F., CP 07360 (Mexico); Lusson, A. [Groupe d' Etudes de la Matiere Condensee, Universite de Versailles, CNRS (UMR 8635), Batiment FERMAT, 45, Avenue des Etats-Unis, 78035 Versailles (France)

2012-09-20

Highlights: Black-Right-Pointing-Pointer This is the first method proposed to probe the electrical activity of dislocations. Black-Right-Pointing-Pointer Based on Hall and resistivity measurements under sub-bad gap illumination. High sensitivity to the charge contained at the dislocations. Black-Right-Pointing-Pointer Is non destructive. Black-Right-Pointing-Pointer And can be applied at some point in the processing of samples and devices. - Abstract: Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities.

Dislocation-like Structures in a Simulated Liquid

DEFF Research Database (Denmark)

Cotterill, Rodney M J

1979-01-01

The free-volume distribution in a simulated Lennard-Jones liquid is heterogeneous. Chains of holes, appearing as segments rather than a continuous network, have lifetimes that are brief compared with the mean vibration period of the atoms. Larger isolated holes persist for longer times. If the ch......The free-volume distribution in a simulated Lennard-Jones liquid is heterogeneous. Chains of holes, appearing as segments rather than a continuous network, have lifetimes that are brief compared with the mean vibration period of the atoms. Larger isolated holes persist for longer times....... If the chains are interpreted as dislocation cores, the observed dislocation density is 1.0×1014 cm-2, but the actual density is probably higher....

Estimation of dislocation concentration in plastically deformed Al-Li based alloy by positron annihilation

International Nuclear Information System (INIS)

Abdelrahman, M.

1997-01-01

Measurements of positron annihilation mean lifetime τ have been performed on eight different specimens of Al-Li based alloy plastically deformed at room temperature up to 40% thickness reduction. This measurement shows clearly positron trapping by dislocations. The positron lifetime τ exhibits a saturation for deformations larger than (15%) thickness reduction. The fitted lifetime varies from (183±2 ps) for annealed sample to (205±2 ps) for the dislocation saturated value. Using a trapping model, the data yield the values of μ=3.83x10 -8 cm 3 s -1 for the specific trapping rate and σ=3.58x10 -15 cm 2 for the trapping cross section, some what lower than those for plastically deformed Al single crystals. The value obtained for Δτ, the increase in lifetime of positrons trapped at dislocations in plastically deformed Al-Li based alloy sample over annihilation in the annealed sample, is 22 ps. This is about 40% of the lifetime increase for the case of positrons trapped at dislocations in plastically deformed Al single crystals. Dislocation densities at different thickness reduction have been estimated. (author)

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Kuwahara, Takaaki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kuwano, Noriyuki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kurisu, Akihiko; Okada, Narihito; Tadatomo, Kazuyuki [Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

2012-03-15

A microstructure in an InGaN/GaN layer grown at the semipolar direction was observed in detail by means of transmission electron microscopy (TEM) in order to analyze the behaviour of dislocations. A (11 anti 22) GaN layer was first deposited on a maskless r (1 anti 102)-plane patterned-substrate, and then an In{sub x} Ga{sub 1-x}N (x =0.10, 0.24) was overgrown to be about 1 {mu}m in thickness. Dislocations near the interface of InGaN/GaN are classified into several types: 1 Threading dislocations lying on (0001). 2. Misfit dislocations lying on the interface of InGaN/GaN. 3. Dislocations along [1 anti 100] at a certain distance from the interface. 4. Dislocations newly formed at the interface and developing along [11 anti 20] on (0001). 5. Partial dislocations accompanied with a stacking fault on (0001). It was found that the misfit dislocations are arrayed in pairs at the direction along [1 anti 100] on the interface of (11 anti 22). Burgers vector of the misfit dislocations was found to be B = <2 anti 1 anti 13>/3. In case of B = [ anti 1 anti 123]/3, they are edge dislocations. The densities of dislocations and stacking faults increase with the In-content in InGaN. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tailoring Superconductivity with Quantum Dislocations.

Science.gov (United States)

Li, Mingda; Song, Qichen; Liu, Te-Huan; Meroueh, Laureen; Mahan, Gerald D; Dresselhaus, Mildred S; Chen, Gang

2017-08-09

Despite the established knowledge that crystal dislocations can affect a material's superconducting properties, the exact mechanism of the electron-dislocation interaction in a dislocated superconductor has long been missing. Being a type of defect, dislocations are expected to decrease a material's superconducting transition temperature (T c ) by breaking the coherence. Yet experimentally, even in isotropic type I superconductors, dislocations can either decrease, increase, or have little influence on T c . These experimental findings have yet to be understood. Although the anisotropic pairing in dirty superconductors has explained impurity-induced T c reduction, no quantitative agreement has been reached in the case a dislocation given its complexity. In this study, by generalizing the one-dimensional quantized dislocation field to three dimensions, we reveal that there are indeed two distinct types of electron-dislocation interactions. Besides the usual electron-dislocation potential scattering, there is another interaction driving an effective attraction between electrons that is caused by dislons, which are quantized modes of a dislocation. The role of dislocations to superconductivity is thus clarified as the competition between the classical and quantum effects, showing excellent agreement with existing experimental data. In particular, the existence of both classical and quantum effects provides a plausible explanation for the illusive origin of dislocation-induced superconductivity in semiconducting PbS/PbTe superlattice nanostructures. A quantitative criterion has been derived, in which a dislocated superconductor with low elastic moduli and small electron effective mass and in a confined environment is inclined to enhance T c . This provides a new pathway for engineering a material's superconducting properties by using dislocations as an additional degree of freedom.

Electron microscope investigation into dislocation structure of cast aluminium alloys

International Nuclear Information System (INIS)

Zolotorevskij, V.S.; Orelkina, T.A.; Istomin-Kastrovskij, V.V.

1978-01-01

By applying the diffraction electron microscopy method, the general specific features of the disclocation structure of cast binary alloys of aluminium with different additions were established. It is shown that in most alloys, when they undergo cooling in the process of crystallization at the rate of about 850 deg/min, the cellular dislocation structure is formed. It is shown that in all the alloys studied, the total density of dislocations of one order is about-10 9 cm -2 , which exceeds by 1 to 2 orders of magnitude the value which follows from the Tiller theory of concentration stresses. It has been experimentally established that the contribution of shrinkage and thermal stresses to the formation of a dislocation structure is rather insignificant; yet the dislocation density values calculated according to the size of dendritic cells and the medium angles of their disorientation are close to those determined by the electron-microscopic method. This is the basis for making a supposition that the greater part of the dislocations in castings are formed as a result of comparing dendritic branches with one another, which are disoriented in respect to each other

Analytical X-ray line profile analysis based upon correlated dislocations

International Nuclear Information System (INIS)

Rao, S.; Houska, C.R.

1988-01-01

Recent advances describing X-ray line profiles analytically, in terms of a minimum number of parameters, are related to a theory based upon correlated dislocations. It is shown that a multiple convolution approach, based upon the Warren-Averbach (W-A) analysis, leads to a form that closely approximates the strain coefficient obtained by Krivoglaz, Martynenko and Ryaboshopka. This connection enables one to determine the dislocation density and the ratio of the correlation range parameter to the mean particle size. These two results are obtained most accurately from previous analytical approaches which make use of a statistical least-squares analysis. The W-A Fourier-series approach provides redundant information and does not focus on the critical parameters that relate to dislocation theory. Results so far are limited to b.c.c. materials. Results for cold-worked W, Mo, Nb, Cr and V are compared with highly imperfect sputtered films of Mo. A major difference is relatable to higher correlation of dislocations in cold-worked metals than is found in sputtered films deposited at low temperatures. However, in each case, the dislocation density is high. (orig.)

Dislocation Processes and Frictional Stability of Faults

Science.gov (United States)

Toy, V. G.; Mitchell, T. M.; Druiventak, A.

2011-12-01

surfaces, at least at the slightly sub-seismic deformation rates of these experiments. Furthermore, once sliding initiated on the saw cut surface, an amorphous material was generated. We hypothesise that this could have been due to a breakdown of the crystal structure by a combination of cataclasis and generation of excessive dislocation densities. There would also have been a slight increase in temperature around the sliding surface during and after fault slip, which may have aided the focussing of dislocation processes around the sliding surface.

Dislocation core structures in Si-doped GaN

International Nuclear Information System (INIS)

Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

2015-01-01

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8  and (10 ± 1) × 10 9  cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN

Dislocation core structures in Si-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

2015-12-14

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

Lubrication of dislocation glide in MgO by hydrous defects

Science.gov (United States)

Skelton, Richard; Walker, Andrew M.

2018-02-01

Water-related defects, principally in the form of protonated cation vacancies, are potentially able to weaken minerals under high-stress or low-temperature conditions by reducing the Peierls stress required to initiate dislocation glide. In this study, we use the Peierls-Nabarro (PN) model to determine the effect of protonated Mg vacancies on the 1/2{110} and 1/2{100} slip systems in MgO. This PN model is parameterized using generalized stacking fault energies calculated using plane-wave density functional theory, with and without protonated Mg vacancies present at the glide plane. It found that these defects increase dislocation core widths and reduce the Peierls stress over the entire pressure range 0-125 GPa. Furthermore, 1/2{110} slip is found to be more sensitive to the presence of protonated vacancies which increases in the pressure at which {100} becomes the easy glide plane for 1/2 screw dislocations. These results demonstrate, for a simple mineral system, that water-related defects can alter the deformation behavior of minerals in the glide-creep regime by reducing the stress required to move dislocations by glide. (Mg, Fe)O is the most anisotropic mineral in the Earth's lower mantle, so the differential sensitivity of the major slip systems in MgO to hydrous defects has potential implications for the interpretation of the seismic anisotropy in this region.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

Science.gov (United States)

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

A dislocation-based crystal plasticity framework for dynamic ductile failure of single crystals

Science.gov (United States)

Nguyen, Thao; Luscher, D. J.; Wilkerson, J. W.

2017-11-01

A framework for dislocation-based viscoplasticity and dynamic ductile failure has been developed to model high strain rate deformation and damage in single crystals. The rate-dependence of the crystal plasticity formulation is based on the physics of relativistic dislocation kinetics suited for extremely high strain rates. The damage evolution is based on the dynamics of void growth, which are governed by both micro-inertia as well as dislocation kinetics and dislocation substructure evolution. An averaging scheme is proposed in order to approximate the evolution of the dislocation substructure in both the macroscale as well as its spatial distribution at the microscale. Additionally, a concept of a single equivalent dislocation density that effectively captures the collective influence of dislocation density on all active slip systems is proposed here. Together, these concepts and approximations enable the use of semi-analytic solutions for void growth dynamics developed in (Wilkerson and Ramesh, 2014), which greatly reduce the computational overhead that would otherwise be required. The resulting homogenized framework has been implemented into a commercially available finite element package, and a validation study against a suite of direct numerical simulations was carried out.

Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Li, K.L., E-mail: klli2010@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Sun, Y.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, J.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); He, Y.; Zeng, X.L. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)

2015-10-30

High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10{sup 6} cm{sup −2} and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga{sub 1−x}In{sub x}P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In{sub 0.3}Ga{sub 0.7}As layers were obtained.

Dislocation density and Burgers vector population in fiber-textured Ni thin films determined by high-resolution X-ray line profile analysis

DEFF Research Database (Denmark)

Csiszár, Gábor; Pantleon, Karen; Alimadadi, Hossein

2012-01-01

distribution are determined by high-resolution X-ray diffraction line profile analysis. The substructure parameters are correlated with the strength of the films by using the combined Taylor and Hall-Petch relations. The convolutional multiple whole profile method is used to obtain the substructure parameters......Nanocrystalline Ni thin films have been produced by direct current electrodeposition with different additives and current density in order to obtain 〈100〉, 〈111〉 and 〈211〉 major fiber textures. The dislocation density, the Burgers vector population and the coherently scattering domain size...

The evolution of internal stress and dislocation during tensile deformation in a 9Cr ferritic/martensitic (F/M) ODS steel investigated by high-energy X-rays

International Nuclear Information System (INIS)

Zhang, Guangming; Zhou, Zhangjian; Mo, Kun; Miao, Yinbin; Liu, Xiang; Almer, Jonathan; Stubbins, James F.

2015-01-01

An application of high-energy wide angle synchrotron X-ray diffraction to investigate the tensile deformation of 9Cr ferritic/martensitic (F/M) ODS steel is presented. With tensile loading and in-situ X-ray exposure, the lattice strain development of matrix was determined. The lattice strain was found to decrease with increasing temperature, and the difference in Young's modulus of six different reflections at different temperatures reveals the temperature dependence of elastic anisotropy. The mean internal stress was calculated and compared with the applied stress, showing that the strengthening factor increased with increasing temperature, indicating that the oxide nanoparticles have a good strengthening impact at high temperature. The dislocation density and character were also measured during tensile deformation. The dislocation density decreased with increasing of temperature due to the greater mobility of dislocation at high temperature. The dislocation character was determined by best-fit methods for different dislocation average contrasts with various levels of uncertainty. The results shows edge type dislocations dominate the plastic strain at room temperature (RT) and 300 °C, while the screw type dislocations dominate at 600 °C. The dominance of edge character in 9Cr F/M ODS steels at RT and 300 °C is likely due to the pinning effect of nanoparticles for higher mobile edge dislocations when compared with screw dislocations, while the stronger screw type of dislocation structure at 600 °C may be explained by the activated cross slip of screw segments. - Highlights: • The tensile deformation of 9Cr ODS steel was studied by synchrotron irradiation. • The evolution of internal mean stress was calculated. • The evolution of dislocation character was determined by best-fit method. • Edge type dominates plasticity at RT and 300 °C, while screw type dominates at 600 °C.

The evolution of internal stress and dislocation during tensile deformation in a 9Cr ferritic/martensitic (F/M) ODS steel investigated by high-energy X-rays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Guangming [School of Materials Science and Engineering, University of Science and Technology, Beijing, Beijing 100083 (China); Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801 (United States); Zhou, Zhangjian, E-mail: zhouzhj@mater.ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology, Beijing, Beijing 100083 (China); Mo, Kun [Nuclear Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Miao, Yinbin; Liu, Xiang [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801 (United States); Almer, Jonathan [X-ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Stubbins, James F. [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801 (United States)

2015-12-15

An application of high-energy wide angle synchrotron X-ray diffraction to investigate the tensile deformation of 9Cr ferritic/martensitic (F/M) ODS steel is presented. With tensile loading and in-situ X-ray exposure, the lattice strain development of matrix was determined. The lattice strain was found to decrease with increasing temperature, and the difference in Young's modulus of six different reflections at different temperatures reveals the temperature dependence of elastic anisotropy. The mean internal stress was calculated and compared with the applied stress, showing that the strengthening factor increased with increasing temperature, indicating that the oxide nanoparticles have a good strengthening impact at high temperature. The dislocation density and character were also measured during tensile deformation. The dislocation density decreased with increasing of temperature due to the greater mobility of dislocation at high temperature. The dislocation character was determined by best-fit methods for different dislocation average contrasts with various levels of uncertainty. The results shows edge type dislocations dominate the plastic strain at room temperature (RT) and 300 °C, while the screw type dislocations dominate at 600 °C. The dominance of edge character in 9Cr F/M ODS steels at RT and 300 °C is likely due to the pinning effect of nanoparticles for higher mobile edge dislocations when compared with screw dislocations, while the stronger screw type of dislocation structure at 600 °C may be explained by the activated cross slip of screw segments. - Highlights: • The tensile deformation of 9Cr ODS steel was studied by synchrotron irradiation. • The evolution of internal mean stress was calculated. • The evolution of dislocation character was determined by best-fit method. • Edge type dominates plasticity at RT and 300 °C, while screw type dominates at 600 °C.

Molecular dynamics simulation of dislocations in uranium dioxide

Energy Technology Data Exchange (ETDEWEB)

Fossati, Paul [CEA, DEN, DPC, SCCME, F-91191 Gif-sur-Yvette Cedex (France); Van Brutzel, Laurent, E-mail: laurent.vanbrutzel@cea.fr [CEA, DEN, DPC, SCCME, F-91191 Gif-sur-Yvette Cedex (France); Devincre, Benoît [LEM, CNRS-ONERA, 29 avenue de la Division Leclerc, F-92322 Châtillon Cedex (France)

2013-11-15

The plasticity of the fluorite structure in UO{sub 2} is investigated with molecular dynamics simulation and empirical potential. The stacking fault energies and the dislocation core structures with Burgers vector a/2 〈110〉 are systematically calculated. All dislocation core structures show a significant increase of the oxygen sub-lattice disorder at temperatures higher than 1500 K. The threshold stress for dislocation glide is found to decrease with increasing temperature but its values is always very high, several GPa at 0 K and several hundred of MPa at 2000 K. A relation between the dislocation mobility dependence with temperature and the increase of the oxygen sub-lattice disorder in the dislocation cores is established.

Spatial organization of plastic deformation in single crystals with different structure of slip dislocation

Energy Technology Data Exchange (ETDEWEB)

Kunitsyna, T. S.; Teplyakova, L. A., E-mail: lat168@mail.ru; Koneva, N. A. [Tomsk State University of Architecture and Building, Tomsk, 634003 (Russian Federation); Poltaranin, M. A. [National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)

2015-10-27

It is established that different structure of slip dislocation at the end of the linear hardening stage results in different distribution of dislocation charges in the volume of a single crystal. In the alloy with a near atomic order the slip of single dislocations leads to formation of planar structures—layers with the excess density of dislocations. In the alloy with long-range atomic order the slip of superdislocations brings the formation of the system of parallel rod-like charged dislocation linking.

Quasicontinuum analysis of dislocation-coherent twin boundary interaction to provide local rules to discrete dislocation dynamics

Science.gov (United States)

Tran, H.-S.; Tummala, H.; Duchene, L.; Pardoen, T.; Fivel, M.; Habraken, A. M.

2017-10-01

The interaction of a pure screw dislocation with a Coherent Twin Boundary Σ3 in copper was studied using the Quasicontinuum method. Coherent Twin Boundary behaves as a strong barrier to dislocation glide and prohibits slip transmission across the boundary. Dislocation pileup modifies the stress field at its intersection with the Grain Boundary (GB). A methodology to estimate the strength of the barrier for a dislocation to slip across CTB is proposed. A screw dislocation approaching the boundary from one side either propagates into the adjacent twin grain by cutting through the twin boundary or is stopped and increases the dislocation pileup amplitude at the GB. Quantitative estimation of the critical stress for transmission was performed using the virial stress computed by Quasicontinuum method. The transmission mechanism and critical stress are in line with the literature. Such information can be used as input for dislocation dynamic simulations for a better modeling of grain boundaries.

Dislocation/hydrogen interaction mechanisms in hydrided nanocrystalline palladium films

International Nuclear Information System (INIS)

Amin-Ahmadi, Behnam; Connétable, Damien; Fivel, Marc; Tanguy, Döme; Delmelle, Renaud; Turner, Stuart; Malet, Loic; Godet, Stephane; Pardoen, Thomas; Proost, Joris; Schryvers, Dominique

2016-01-01

The nanoscale plasticity mechanisms activated during hydriding cycles in sputtered nanocrystalline Pd films have been investigated ex-situ using advanced transmission electron microscopy techniques. The internal stress developing within the films during hydriding has been monitored in-situ. Results showed that in Pd films hydrided to β-phase, local plasticity was mainly controlled by dislocation activity in spite of the small grain size. Changes of the grain size distribution and the crystallographic texture have not been observed. In contrast, significant microstructural changes were not observed in Pd films hydrided to α-phase. Moreover, the effect of hydrogen loading on the nature and density of dislocations has been investigated using aberration-corrected TEM. Surprisingly, a high density of shear type stacking faults has been observed after dehydriding, indicating a significant effect of hydrogen on the nucleation energy barriers of Shockley partial dislocations. Ab-initio calculations of the effect of hydrogen on the intrinsic stable and unstable stacking fault energies of palladium confirm the experimental observations.

Ab-Initio Simulation of a/2 Screw Dislocations Gamma-TiAl

National Research Council Canada - National Science Library

Woodward, C; Rao, S. I

2004-01-01

...The equilibrium core structure of an isolated a/2screw dislocations is calculated using a first-principles pseudopotential-planewave method within the Local Density Approximation of Density Functional Theory...

Segregation of cascade induced interstitial loops at dislocations: possible effect on initiation of plastic deformation

Energy Technology Data Exchange (ETDEWEB)

Trinkaus, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Festkoerperforschung; Singh, B.N. [Materials Research Department, Risoe National Laboratory, DK-4000 Roskilde (Denmark); Foreman, A.J.E. [Materials Performance Department, Harwell Laboratory, Oxfordshire OX11 0RA (United Kingdom)

1997-11-01

In metals and alloys subjected to cascade damage dislocations are frequently found to be decorated with a high density of small clusters of self-interstitial atoms (SIAs) in the form of dislocation loops. In the present paper it is shown that this effect may be attributed to the glide and trapping of SIA loops, produced directly in cascades (rather than to the enhanced agglomeration of single SIAs), in the strain field of the dislocations. The conditions for the accumulation of glissile SIA loops near dislocations as well as the dose and temperature dependencies of this phenomenon are discussed. It is suggested that the decoration of dislocations with loops may play a key role in radiation hardening subjected to cascade damage. It is shown, for example, that the increase in the upper yield stress followed by a yield drop and plastic instability in metals andalloys subjected to cascade damage cannot be rationalized in terms of conventional dispersed barrier hardening (DBH) but may be understood in terms of cascade induced source hardening (CISH) in which the dislocations are considered to be locked by the loops decorating them. Estimates for the stress necessary to pull a dislocation away from its loop `cloud` are used to discuss the dose and temperature dependence of plastic flow initiation. (orig.). 55 refs.

Segregation of cascade induced interstitial loops at dislocations: possible effect on initiation of plastic deformation

International Nuclear Information System (INIS)

Trinkaus, H.; Foreman, A.J.E.

1997-01-01

In metals and alloys subjected to cascade damage dislocations are frequently found to be decorated with a high density of small clusters of self-interstitial atoms (SIAs) in the form of dislocation loops. In the present paper it is shown that this effect may be attributed to the glide and trapping of SIA loops, produced directly in cascades (rather than to the enhanced agglomeration of single SIAs), in the strain field of the dislocations. The conditions for the accumulation of glissile SIA loops near dislocations as well as the dose and temperature dependencies of this phenomenon are discussed. It is suggested that the decoration of dislocations with loops may play a key role in radiation hardening subjected to cascade damage. It is shown, for example, that the increase in the upper yield stress followed by a yield drop and plastic instability in metals andalloys subjected to cascade damage cannot be rationalized in terms of conventional dispersed barrier hardening (DBH) but may be understood in terms of cascade induced source hardening (CISH) in which the dislocations are considered to be locked by the loops decorating them. Estimates for the stress necessary to pull a dislocation away from its loop 'cloud' are used to discuss the dose and temperature dependence of plastic flow initiation. (orig.)

Micro-strain, dislocation density and surface chemical state analysis of multication thin films

Energy Technology Data Exchange (ETDEWEB)

Jayaram, P., E-mail: jayarampnair@gmail.com [Department of Physics, MES Ponnani College Ponnani, Kerala (India); Pradyumnan, P.P. [Department of Physics, University of Calicut, Kerala 673 635 (India); Karazhanov, S.Zh. [Department for Solar Energy, Institute for Energy Technology, Kjeller (Norway)

2016-11-15

Multication complex metal oxide thin films are rapidly expanding the class of materials with many technologically important applications. Herein this work, the surface of the pulsed laser deposited thin films of Zn{sub 2}SnO{sub 4} and multinary compounds obtained by substitution/co-substitution of Sn{sup 4+} with In{sup 3+} and Ga{sup 3+} are studied by X-ray photoelectron emission spectroscopy (X-PES) method. Peaks corresponding to the elements of Zn, Sn, Ga, In and O on the film surface has been identified and contribution of the elements has been studied by the computer aided surface analysis (CASA) software. Binding energies, full-width at half maximum (FWHM), spin-orbit splitting energies, asymmetric peak-shape fitting parameters and quantification of elements in the films are discussed. Studies of structural properties of the films by x-ray diffraction (XRD) technique showed inverse spinel type lattice with preferential orientation. Micro-strain, dislocation density and crystallite sizes in the film surface have been estimated.

Metastablity of the undissociated state of dissociated dislocations

International Nuclear Information System (INIS)

Takeuchi, Shin

2005-01-01

Undissociated, metastable dislocations have been observed in various crystals in addition to stable dissociated dislocations by high-resolution transmission electron microscopy. The origin of the metastablity of the undissociated state has been discussed specifically for the dissociation into Shockley partial dislocations in fcc or hcp lattice. It is shown that the metastability is due either to a high Peierls-Nabarro stress larger than a few percent of the shear modulus of the partial dislocations and/or to the increase of the total core energy by an increase of the dangling bonds. The metastablity of undissociated dislocations in zincblende III-V compounds is concluded to be due to a contribution of the latter effect

Neglected locked vertical patellar dislocation

Science.gov (United States)

Gupta, Rakesh Kumar; Gupta, Vinay; Sangwan, Sukhbir Singh; Kamboj, Pradeep

2012-01-01

Patellar dislocations occurring about the vertical and horizontal axis are rare and irreducible. The neglected patellar dislocation is still rarer. We describe the clinical presentation and management of a case of neglected vertical patellar dislocation in a 6 year-old boy who sustained an external rotational strain with a laterally directed force to his knee. Initially the diagnosis was missed and 2 months later open reduction was done. The increased tension generated by the rotation of the lateral extensor retinaculum kept the patella locked in the lateral gutter even with the knee in full extension. Traumatic patellar dislocation with rotation around a vertical axis has been described earlier, but no such neglected case has been reported to the best of our knowledge. PMID:23162154

Neglected locked vertical patellar dislocation

Directory of Open Access Journals (Sweden)

Rakesh Kumar Gupta

2012-01-01

Full Text Available Patellar dislocations occurring about the vertical and horizontal axis are rare and irreducible. The neglected patellar dislocation is still rarer. We describe the clinical presentation and management of a case of neglected vertical patellar dislocation in a 6 year-old boy who sustained an external rotational strain with a laterally directed force to his knee. Initially the diagnosis was missed and 2 months later open reduction was done. The increased tension generated by the rotation of the lateral extensor retinaculum kept the patella locked in the lateral gutter even with the knee in full extension. Traumatic patellar dislocation with rotation around a vertical axis has been described earlier, but no such neglected case has been reported to the best of our knowledge.

Dislocation climb models from atomistic scheme to dislocation dynamics

OpenAIRE

Niu, Xiaohua; Luo, Tao; Lu, Jianfeng; Xiang, Yang

2016-01-01

We develop a mesoscopic dislocation dynamics model for vacancy-assisted dislocation climb by upscalings from a stochastic model on the atomistic scale. Our models incorporate microscopic mechanisms of (i) bulk diffusion of vacancies, (ii) vacancy exchange dynamics between bulk and dislocation core, (iii) vacancy pipe diffusion along the dislocation core, and (iv) vacancy attachment-detachment kinetics at jogs leading to the motion of jogs. Our mesoscopic model consists of the vacancy bulk dif...

Evolution of dislocations and twins in a strong and ductile nanotwinned steel

International Nuclear Information System (INIS)

Zhou, P.; Liang, Z.Y.; Liu, R.D.; Huang, M.X.

2016-01-01

A twinning-induced plasticity (TWIP) steel was subjected to a simple processing route (i.e. cold rolling followed by a recovery heat treatment) suitable for large-scale industrial production, resulting in the production of a strong and ductile nanotwinned steel. This nanotwinned steel combines high yield strength (1450 MPa), high ultimate tensile strength (1600 MPa) and good ductility (25% total elongation). Detailed transmission electron microscopy observation reveals that the twin volume fraction of the nanotwinned steel remains constant during tensile deformation. This is different to the deformation behaviour of recrystallized TWIP steels whose twin volume fraction increase continuously with strain during tensile deformation. The constant twin volume fraction indicates that a maximum twin volume fraction has been reached during the cold rolling process. In contrast, the dislocation density of the nanotwinned steel increases with strain as measured by the synchrotron X-ray diffraction experiments. In other words, the plastic deformation of the nanotwinned steel is mainly accommodated by glide and multiplication of dislocations. Based on the experimental results, an analytical model was developed to capture the respective effects of dislocations and twins on the strength and ductility of the present nanotwinned steel. The modelling results indicate that the strength is contributed by both twins and dislocations while the ductility is mainly attributed to dislocation multiplication. -- Graphical abstract: (a) TEM bright field image showing intensive nanotwins in the nanotwinned steel. Selected area diffraction pattern obtained within the red circle. (b) The engineering stress–stain curve of the nanotwinned steel. Display Omitted

Significance of dislocations in the mechanism of Hadfield cast steel strengthening

International Nuclear Information System (INIS)

Stradomski, Z.; Morgiel, J.; Olszewski, J.

1999-01-01

The paper presents the results of microstructural examination of the adfield cast steel (L120G13 according to Polish Standards) strengthened by explosion method, which is an attractive alternative of the surface treatment of metal materials regarding its technological, economical and organizational aspects. The presented results have been obtained by means of qualitative and quantitative analysis of thin foils taken at different distances from the material surface being strengthened by single, double or triple detonation of 3 mm thick charges of explosive. The high pressure, order of 18 GPa, causes significant changes in dislocation structure of the austenite matrix. The strengthening of Hadfield cast steel during explosion is based on the increase of the dislocation density by several times as related to the supersaturated state and on the creation of dislocation bands consisting of short, densely tangled dislocations. Plastic deformation mechanisms i. e., slip lines and micro-twins, are definitively of minor importance. It has been also proved by means of the nuclear resonance method that the explosion do not cause changes in distribution of carbon atoms in the nearest neighbourhood of Fe atoms and that austenite is not transformed into the α-martensite or the hexagonal ε-phase. (author)

Dislocation dynamics modelling of radiation damage in thin films

International Nuclear Information System (INIS)

Ferroni, Francesco; Tarleton, Edmund; Fitzgerald, Steven

2014-01-01

Transmission electron microscopy is a key tool for the extraction of information on radiation damage, the understanding of which is critical for materials development for nuclear fusion and fission reactors. Dislocations in TEM samples are subject to strong image forces, owing to the nanometric sample thicknesses, which may introduce artifacts in the damage analysis. Using dislocation dynamics, we elucidate the roles played by dislocation–surface interactions, dislocation–dislocation interactions and self-interactions due to climb for loop types observed in TEM. Comparisons with analytic solutions for a dislocation loop and an edge dislocation in a half-space are included, and the relationship between glide force and loop tilt examined. The parameters for convergence of the zero-traction boundary conditions are obtained, after which the evolution of dislocation structures in a thin film is studied. It is found that three main length scales govern the physical processes: the image force is governed by the distance of the loop from the surface and scales with the film thickness; the glide force is governed by the image stress as well as the loop–loop interaction stress which is in turn governed by the loop spacing L∼1/√ρ, where ρ is the loop density; finally, the climb force depends on the loop size. The three forces compete and their relative magnitudes define the evolution pathway of the dislocation structure. (paper)

Dislocation-cavity interaction in Fe: a comparison between molecular dynamics and dislocation dynamics

International Nuclear Information System (INIS)

Hafez Haghighat, S.M.; Schaeublin, R.; Fivel, M.C.

2007-01-01

Full text of publication follows: multi-scale modeling, including molecular dynamics (MD) and discrete dislocation dynamics (DDD) methods, appears as a significant tool for the description of plasticity and mechanical properties of materials. This research is on the investigation of the subsequence effects of irradiation on the plasticity of pure Fe and focuses on the interaction of a single dislocation and a spherical cavity, as void or He bubble. Extensive MD simulations of the interaction under imposed strain rate [1, 2] have shown that various temperatures and cavity sizes result in different release stresses depending on dislocation bow out. It appears that a temperature increase and cavity size decrease reduce the cavity strength. MD simulation shows that the elastic field around the cavity is largely anisotropic. This anisotropy may influence the way the dislocation unpins from the cavity. Following the MD simulations, the interaction of a single dislocation and a spherical cavity is now simulated using a DDD discrete dislocation dynamics model. The simulation accounts for the non-Schmidt effect induced by the bcc structure of Fe through local rules derived from MD simulations [3]. The cavity is introduced in the simulation by computing the image forces using a finite element technique. The effective stress applied on the dislocation is then obtained as the superimposition of the applied stress field, the image stress field and the internal stresses. Note that such a model only uses elasticity theory and no core effect of dislocations is taken into account. One of the objectives of this work is to check whether elasticity is responsible of the behaviour observed by MD. Several cases are tested. First an edge dislocation in a (110) plane is pushed against the cavity under a pure shear loading. The local reaction of the dislocations and the cavity are compared to the MD simulations. Then, the case of a screw dislocation is studied. Finally, other loading

Dislocation Strengthening without Ductility Trade-off in Metastable Austenitic Steels

Science.gov (United States)

Liu, Jiabin; Jin, Yongbin; Fang, Xiaoyang; Chen, Chenxu; Feng, Qiong; Liu, Xiaowei; Chen, Yuzeng; Suo, Tao; Zhao, Feng; Huang, Tianlin; Wang, Hongtao; Wang, Xi; Fang, Youtong; Wei, Yujie; Meng, Liang; Lu, Jian; Yang, Wei

2016-10-01

Strength and ductility are mutually exclusive if they are manifested as consequence of the coupling between strengthening and toughening mechanisms. One notable example is dislocation strengthening in metals, which invariably leads to reduced ductility. However, this trend is averted in metastable austenitic steels. A one-step thermal mechanical treatment (TMT), i.e. hot rolling, can effectively enhance the yielding strength of the metastable austenitic steel from 322 ± 18 MPa to 675 ± 15 MPa, while retaining both the formability and hardenability. It is noted that no boundaries are introduced in the optimized TMT process and all strengthening effect originates from dislocations with inherited thermal stability. The success of this method relies on the decoupled strengthening and toughening mechanisms in metastable austenitic steels, in which yield strength is controlled by initial dislocation density while ductility is retained by the capability to nucleate new dislocations to carry plastic deformation. Especially, the simplicity in processing enables scaling and industrial applications to meet the challenging requirements of emissions reduction. On the other hand, the complexity in the underlying mechanism of dislocation strengthening in this case may shed light on a different route of material strengthening by stimulating dislocation activities, rather than impeding motion of dislocations.

Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)

Energy Technology Data Exchange (ETDEWEB)

Sato, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)]. E-mail: taku-s@jaist.ac.jp; Suzuki, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, 4-16-1 Okata, Atugi, Kanagawa 243-0021 (Japan); Yamada, S. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2006-04-01

We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which indicates that the former is the origin of the latter. This behavior is well explained by pair annihilation mechanism of the threading dislocations. The electron mobility is limited by ionized donor scattering, i.e. charged dislocation scattering.

Study of methods to increase cluster/dislocation loop densities in electrodes

Science.gov (United States)

Yang, Xiaoling; Miley, George H.

2009-03-01

Recent research has developed a technique for imbedding ultra-high density deuterium ``clusters'' (50 to 100 atoms per cluster) in various metals such as Palladium (Pd), Beryllium (Be) and Lithium (Li). It was found the thermally dehydrogenated PdHx retained the clusters and exhibited up to 12 percent lower resistance compared to the virginal Pd samplesootnotetextA. G. Lipson, et al. Phys. Solid State. 39 (1997) 1891. SQUID measurements showed that in Pd these condensed matter clusters approach metallic conditions, exhibiting superconducting propertiesootnotetextA. Lipson, et al. Phys. Rev. B 72, 212507 (2005ootnotetextA. G. Lipson, et al. Phys. Lett. A 339, (2005) 414-423. If the fabrication methods under study are successful, a large packing fraction of nuclear reactive clusters can be developed in the electrodes by electrolyte or high pressure gas loading. This will provide a much higher low-energy-nuclear- reaction (LENR) rate than achieved with earlier electrodeootnotetextCastano, C.H., et al. Proc. ICCF-9, Beijing, China 19-24 May, 2002..

Dislocation structures and mechanical behaviour of Ge single crystals deformed by compression

International Nuclear Information System (INIS)

Nyilas, K.; Dupas, C.; Kruml, T.; Zsoldos, L.; Ungar, T.; Martin, J.L.

2004-01-01

Stress-strain curves of germanium interrupted by dip tests reveal that the internal stresses ascend parallel to the applied stress in a strain-rate dependent way. To understand this peculiar behaviour, the dislocation microstructure has been characterized. Transmission electron microscopy images show that regions of high dislocation activity along the primary slip system are separated by dislocation-free zones. X-ray microdiffraction reveals that the dislocation density is fluctuating on a 100 μm scale. X-ray reciprocal-space mapping, together with scanning microdiffraction, shows that misoriented mosaic blocks are forming owing to the boundary conditions in the compression test. These preliminary results reveal deformation heterogeneity both at macroscopic and mesoscopic scales

Mechanisms operating during plastic deformation of metals under concurrent production of cascades and dislocations

International Nuclear Information System (INIS)

Trinkaus, H.; Singh, B.N.

2008-04-01

Recent in-reactor tensile tests (IRTs) on pure copper have revealed a deformation behaviour which is significantly different from that observed in post-irradiation tensile tests (PITs). In IRTs, the material deforms uniformly and homogeneously without yield drop and plastic instability as commonly observed in PITs. An increase in the pre-yield dose results in an increase in the level of hardening over the whole test periods and a decrease in the uniform elongation suggesting that the materials 'remember' the impact of the pre-yield damage level. These features are modelled in terms of the decoration of dislocations with glissile dislocation loops. During pre-yield irradiation, dislocation decoration is due to the one-dimensional (1D) diffusion of cascade induced self-interstitial (SIA) clusters and their trapping in the stress field of the static grown-in dislocations. During post-yield irradiation and deformation, moving dislocations are decorated by the sweeping of matrix loops. The interaction of dislocations with loops and between loops is discussed as a function of the relevant parameters. On this basis, the kinetics of decoration is treated in terms of fluxes of loops to and reactions with each other in a conceived 2D space of decoration. In this space, loop coalescence, alignment and mutual blocking reactions are characterised by appropriate reaction cross sections. In the kinetic equations for 'dynamic decoration' under deformation, the evolution of the dislocation density is taken into account. Simple solutions of the kinetic equations are discussed. The apparent memory of the system for the pre-yield dose is identified as the result of simultaneous and closely parallel transient evolutions of the cascade damage and the dislocations up to the end of the IRTs. The contributions of dislocation decoration to yield and flow stresses are attributed to the interaction of dislocations with aligned loops temporarily or permanently immobilized by other loops or

Dislocations and radiation damage in α-uranium

International Nuclear Information System (INIS)

Leteurtre, J.

1969-01-01

Dislocations in α-uranium were studied by electron microscopy. Electropolishing of thin foils was performed at low temperature (-110 deg. C) to prevent oxidation. Burgers vectors of twins dislocations are defined. Interactions between slip and twinning are studied from both experimental and theoretical point of view. Samples irradiated at several burn-up were examined. In order to explain our micrographic results, and also all information gathered in literature about radiation damage in α-uranium, a coherent model is propound for the fission particles effects. We analyse the influences of parameters: temperature, dislocation density, impurity content. The number of point defects created by one initial fission is determined for pure and annealed metal. The importance of the self-anneal which occurs immediately in each displacement spike, and the anneal due to a new fission on the damage resulting from a previous fission, are estimated. The focussing distance in [100] direction is found to be about 1000 Angstrom, at 4 deg. K. (author) [fr

[Elbow dislocation].

Science.gov (United States)

de Pablo Márquez, B; Castillón Bernal, P; Bernaus Johnson, M C; Ibañez Aparicio, N M

Elbow dislocation is the most frequent dislocation in the upper limb after shoulder dislocation. Closed reduction is feasible in outpatient care when there is no associated fracture. A review is presented of the different reduction procedures. Copyright © 2017 Sociedad Española de Médicos de Atención Primaria (SEMERGEN). Publicado por Elsevier España, S.L.U. All rights reserved.

Nucleation of dislocations from [0 0 1] bicrystal interfaces in aluminum

International Nuclear Information System (INIS)

Spearot, Douglas E.; Jacob, Karl I.; McDowell, David L.

2005-01-01

It is well established from molecular dynamics simulations that grain boundaries in nanocrystalline samples serve as sources of dislocations. In this work, we use molecular dynamics simulations to study the mechanisms associated with dislocation nucleation from bicrystal [0 0 1] interfaces in aluminum. Three interface misorientations are studied, including the Σ5 (3 1 0) boundary, which has a high density of coincident atomic sites. Molecular dynamics simulations show that full dislocation loops are nucleated from each interface during uniaxial tension. After the second partial dislocation is emitted, a ledge remains within the interface at the intersection of the slip plane and the bicrystal boundary. A disclination dipole model is proposed for the structure of the distorted interface accounting for local lattice rotations and the ledge at the nucleation site

Dislocation based controlling of kinematic hardening contribution to simulate primary and secondary stages of uniaxial ratcheting

Science.gov (United States)

Bhattacharjee, S.; Dhar, S.; Acharyya, S. K.

2017-07-01

The primary and secondary stages of the uniaxial ratcheting curve for the C-Mn steel SA333 have been investigated. Stress controlled uniaxial ratcheting experiments were conducted with different mean stresses and stress amplitudes to obtain curves showing the evolution of ratcheting strain with number of cycles. In stage-I of the ratcheting curve, a large accumulation of ratcheting strain occurs, but at a decreasing rate. In contrast, in stage-II a smaller accumulation of ratcheting strain is found and the ratcheting rate becomes almost constant. Transmission electron microscope observations reveal that no specific dislocation structures are developed during the early stages of ratcheting. Rather, compared with the case of low cycle fatigue, it is observed that sub-cell formation is delayed in the case of ratcheting. The increase in dislocation density as a result of the ratcheting strain is obtained using the Orowan equation. The ratcheting strain is obtained from the shift of the plastic strain memory surface. The dislocation rearrangement is incorporated in a functional form of dislocation density, which is used to calibrate the parameters of a kinematic hardening law. The observations are formulated in a material model, plugged into the ABAQUS finite element (FE) platform as a user material subroutine. Finally the FE-simulated ratcheting curves are compared with the experimental curves.

The impact of ScO{sub x}N{sub y} interlayers on unintentional doping and threading dislocations in GaN

Energy Technology Data Exchange (ETDEWEB)

Zhu, T; Moram, M A; Rao, D V Sridhara; Li, H; Kappers, M J; Oliver, R A, E-mail: tz234@cam.ac.u [Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2010-02-01

To reduce the threading dislocation density in (0001) GaN grown on c-plane sapphire, a series of samples have been grown using scandium oxynitride (ScO{sub x}N{sub y}) interlayers (ILs) on AlN-on-sapphire templates. Scanning capacitance microscopy (SCM) has been employed to investigate the unintentional doping in GaN with varying ScO{sub x}N{sub y} IL thicknesses. The use of ScO{sub x}N{sub y} ILs decreases the threading dislocation density. An unintentionally n-doped layer has been identified by SCM close to the GaN/ScO{sub x}N{sub y} interface. The average width of this conductive layer has been quantified and found to increase as the ScO{sub x}N{sub y} IL thickness increases up to 13 nm.

Subtalar dislocation

International Nuclear Information System (INIS)

El-Khoury, G.Y.; Yousefzadeh, D.K.; Mulligan, G.M.; Moore, T.E.

1982-01-01

Over a period of three years we have seen nine patients with subtalar dislocation, all of whom sustained violent trauma to the region of the ankle and hind foot. All but one patient were males. Clinically a subtalar dislocation resembles a complicated fracture dislocation of the ankle but a definitive diagnosis can only be made radiographically. The mechanism of injury and radiographic features of this injury are discussed. (orig.)

Intraocular lens dislocation after whole-body vibration.

Science.gov (United States)

Vela, José I; Andreu, David; Díaz-Cascajosa, Jesús; Buil, José A

2010-10-01

We present 2 cases of intraocular lens (IOL) dislocation that appeared shortly after the patients exercised on a vibration platform. The first patient was a 71-year-old woman who presented with lens subluxation in her right eye and a complete posterior IOL dislocation in her left eye. The second case was a 62-year-old woman who presented with unilateral IOL dislocation within the capsular bag in her right eye. Timing from IOL implantation to dislocation was approximately 6 years and 4 years, respectively. Pars plana vitrectomy with removal of the dislocated IOL was performed in both patients. Whole-body vibration training has become increasingly popular as a form of exercise training. It reportedly may provide benefits in physical function and in some diseases, especially in older people. However, evidence-based protocols ensuring safety and efficacy in this population are lacking. We discuss vibration as a cause of late IOL dislocation. Copyright © 2010 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Orientation-dependent evolution of the dislocation density in grain populations with different crystallographic orientations relative to the tensile axis in a polycrystalline aggregate of stainless steel

International Nuclear Information System (INIS)

Ungár, Tamás; Stoica, Alexandru D.; Tichy, Géza; Wang, Xun-Li

2014-01-01

Line profile analysis was carried out on neutron diffraction patterns collected by the energy-dispersive method for an in situ tensile-deformed AISI-316 stainless steel specimen. The experiments were carried out at the VULCAN engineering beam line of the spallation neutron source of the Oak Ridge National Laboratory. Both the dislocation densities and the local stresses in grains oriented with different h k l crystal directions along the tensile axis were determined. The work-hardening equation of Taylor was tested for the h k l-dependent phenomenological constant α. The grain-orientation-dependent α values were directly related to the heterogeneity of dislocation distribution in correlation with previous transmission electron microscopy data

Dislocation-dynamics method

International Nuclear Information System (INIS)

Van Brutzel, L.

2015-01-01

Dislocation-Dynamics (DD) technique is identified as the method able to model the evolution of material plastic properties as a function of the microstructural transformation predicted at the atomic scale. Indeed, it is the only simulation method capable of taking into account the collective behaviour of a large number of dislocations inside a realistic microstructure. DD simulations are based on the elastic dislocation theory following rules inherent to the dislocation core structure often call 'local rules'. All the data necessary to establish the local rules for DD have to come directly from experiment or alternatively from simulations carried out at the atomic scale such as molecular dynamics or ab initio calculations. However, no precise information on the interaction between two dislocations or between dislocations and defects induced by irradiation are available for nuclear fuels. Therefore, in this article the DD technique will be presented and some examples are given of what can be achieved with it. (author)

The influence of anisotropy on the core structure of Shockley partial dislocations within FCC materials

Science.gov (United States)

Szajewski, B. A.; Hunter, A.; Luscher, D. J.; Beyerlein, I. J.

2018-01-01

Both theoretical and numerical models of dislocations often necessitate the assumption of elastic isotropy to retain analytical tractability in addition to reducing computational load. As dislocation based models evolve towards physically realistic material descriptions, the assumption of elastic isotropy becomes increasingly worthy of examination. We present an analytical dislocation model for calculating the full dissociated core structure of dislocations within anisotropic face centered cubic (FCC) crystals as a function of the degree of material elastic anisotropy, two misfit energy densities on the γ-surface ({γ }{{isf}}, {γ }{{usf}}) and the remaining elastic constants. Our solution is independent of any additional features of the γ-surface. Towards this pursuit, we first demonstrate that the dependence of the anisotropic elasticity tensor on the orientation of the dislocation line within the FCC crystalline lattice is small and may be reasonably neglected for typical materials. With this approximation, explicit analytic solutions for the anisotropic elasticity tensor {B} for both nominally edge and screw dislocations within an FCC crystalline lattice are devised, and employed towards defining a set of effective isotropic elastic constants which reproduce fully anisotropic results, however do not retain the bulk modulus. Conversely, Hill averaged elastic constants which both retain the bulk modulus and reasonably approximate the dislocation core structure are employed within subsequent numerical calculations. We examine a wide range of materials within this study, and the features of each partial dislocation core are sufficiently localized that application of discrete linear elasticity accurately describes the separation of each partial dislocation core. In addition, the local features (the partial dislocation core distribution) are well described by a Peierls-Nabarro dislocation model. We develop a model for the displacement profile which depends upon

Assessment of geometrically necessary dislocation levels derived by 3D EBSD

International Nuclear Information System (INIS)

Konijnenberg, P.J.; Zaefferer, S.; Raabe, D.

2015-01-01

Existing alternatives for the calculation of geometrically necessary dislocation (GND) densities from orientation fields are discussed. Importantly, we highlight the role of reference frames and consider different sources of error. A well-controlled micro cantilever bending experiment on a copper bicrystal has been analyzed by 3-dimensional electron back scatter diffraction (3D EBSD). The GND density is determined experimentally by two different approaches and assessed theoretically, assuming a homogeneous bending of the cantilever. Experiment and theory agree very well. It is further shown that the deformation is accommodated mainly by GNDs, which carry and store lattice rotation, and not (only) by mobile dislocations that leave a crystal portion inspected, without lattice rotations. A detailed GND analysis reveals a local density minimum close to the grain boundary and a distinct difference in edge to screw ratios for both grains

Contributions to Internal Stress from Free Dislocations and from Substructure Boundaries in Dislocation Structure Formed in High Temperature Creep

Czech Academy of Sciences Publication Activity Database

Orlová, Alena; Dobeš, Ferdinand

2008-01-01

Roč. 567-568, - (2008), s. 173-176 ISSN 0255-5476. [MSMF /5./. Brno, 27.06.2007-29.06.2007] R&D Projects: GA AV ČR 1QS200410502 Institutional research plan: CEZ:AV0Z20410507 Keywords : creep * internal stress * subgrain * dislocation density Subject RIV: BM - Solid Matter Physics ; Magnetism

Mechanisms operating during plastic deformation of metals under concurrent production of cascades and dislocations

Energy Technology Data Exchange (ETDEWEB)

Trinkaus, H. [Institut fuer Festkoerperforschung, Forschungszentrum Juelich (Germany); Singh, B.N. [Technical Univ. of Denmark, Risoe National Laboratory for Sustainable Energy, Materials Research Dept., Roskilde (Denmark)

2008-04-15

Recent in-reactor tensile tests (IRTs) on pure copper have revealed a deformation behaviour which is significantly different from that observed in post-irradiation tensile tests (PITs). In IRTs, the material deforms uniformly and homogeneously without yield drop and plastic instability as commonly observed in PITs. An increase in the pre-yield dose results in an increase in the level of hardening over the whole test periods and a decrease in the uniform elongation suggesting that the materials 'remember' the impact of the pre-yield damage level. These features are modelled in terms of the decoration of dislocations with glissile dislocation loops. During pre-yield irradiation, dislocation decoration is due to the one-dimensional (1D) diffusion of cascade induced self-interstitial (SIA) clusters and their trapping in the stress field of the static grown-in dislocations. During post-yield irradiation and deformation, moving dislocations are decorated by the sweeping of matrix loops. The interaction of dislocations with loops and between loops is discussed as a function of the relevant parameters. On this basis, the kinetics of decoration is treated in terms of fluxes of loops to and reactions with each other in a conceived 2D space of decoration. In this space, loop coalescence, alignment and mutual blocking reactions are characterised by appropriate reaction cross sections. In the kinetic equations for 'dynamic decoration' under deformation, the evolution of the dislocation density is taken into account. Simple solutions of the kinetic equations are discussed. The apparent memory of the system for the pre-yield dose is identified as the result of simultaneous and closely parallel transient evolutions of the cascade damage and the dislocations up to the end of the IRTs. The contributions of dislocation decoration to yield and flow stresses are attributed to the interaction of dislocations with aligned loops temporarily or permanently immobilized

Perilunate Dislocation

Directory of Open Access Journals (Sweden)

John Jiao

2016-09-01

Full Text Available History of present illness: A 25-year-old female presented to the emergency department with left wrist pain following a fall off a skateboard. The patient fell on her outstretched left wrist with the wrist dorsiflexed and reported immediate sharp pain to her left wrist that was worse with movement. She denied other trauma. Significant findings: In the left lateral wrist x-ray, the lunate (outlined in blue is dislocated from the rest of the wrist bones (yellow line but still articulates with the radius (red line. The capitate (yellow line does not sit within the distal articulation of the lunate and is displaced dorsally. Additionally, a line drawn through the radius and lunate (green line fails to intersect with the capitate. This is consistent with a perilunate dislocation. This is compared to a lunate dislocation, where the lunate itself is displaced and turned ventrally (spilled teacup and the proximal aspect does not articulate with the radius. Discussion: A perilunate dislocation is a significant closed wrist injury that is easily missed on standard anterior-posterior imaging. These dislocations are relatively rare, involving only 7% of all carpal injuries and are associated with high-energy trauma onto a hyperextended wrist, such as falls from a height, motor vehicle accidents, and sports injuries.1 An untreated perilunate dislocation is associated with high risk of chronic carpal instability and post-traumatic arthritis. If the mechanism of injury is sufficient to suspect perilunate dislocation, multiple radiographic views of the wrist should be ordered. Patients should receive prompt orthopedic consultation for open reduction and ligamentous repair. Even after successful identification and subsequent surgical repair, median nerve neuropathy and post-traumatic arthritis are frequent.2-3

Inhomogeneous dislocation structure in fatigued INCONEL 713 LC superalloy at room and elevated temperatures

International Nuclear Information System (INIS)

Petrenec, Martin; Obrtlik, Karel; Polak, Jaroslav

2005-01-01

The dislocations arrangement was studied using transmission electron microscopy in specimens of polycrystalline INCONEL 713 LC superalloy cyclically strained up to failure with constant total strain amplitudes at temperatures 300, 773, 973 and 1073 K. Planar dislocation arrangements in the form of bands parallel to the {1 1 1} planes were observed in specimens cycled at all the temperatures. The bands showed up as thin slabs of high dislocation density cutting both the γ channels and γ' precipitates. Ladder-like bands were observed at room temperature

Partitioning of water between point defects, dislocations, and grain boundaries in olivine

Science.gov (United States)

Tielke, J. A.; Mecklenburgh, J.; Mariani, E.; Wheeler, J.

2017-12-01

Estimates of the storage capacity of water in the interior of the Earth and other terrestrial planets vary significantly. One interpretation is that water in planetary interiors exists primarily as hydrogen ions, dissociated from liquid water, that are associated with point defects in the crystal structure of nominally anhydrous minerals. However, dislocations and grain boundaries may contribute significantly to the storage capacity of water in planetary interiors, but hydrogen concentrations in dislocations and grain boundaries are difficult to quantify. To measure the water storage capacity of dislocations and grain boundaries, we are analyzing results from high-temperature and high-pressure experiments where deuterium, a stable isotope of hydrogen, was incorporated into olivine, the dominate phase in the upper mantle. Compared to hydrogen, deuterium concentrations can be determined at much higher spatial resolution using secondary-ion mass spectroscopy. The concentration of deuterium in the samples will also be quantified using Fourier transform infrared spectroscopy for comparison to results for hydrogen-bearing olivine. The spatial distribution of regions with different densities of geometrically-necessary dislocations and the locations of grain boundaries will be determined using electron-backscatter diffraction (EBSD) analyses. Correlation of the concentration of deuterium with dislocation densities and grain boundaries will be used to examine the partitioning of water-derived species between the different types of defects. Ultimately, these data will be used to place more realistic bounds on the storage capacity of water in the interior of Earth and of other terrestrial planets.

Effect of deep dislocation levels in silicon on the properties of p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

1988-07-01

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

Contributions of Cu-rich clusters, dislocation loops and nanovoids to the irradiation-induced hardening of Cu-bearing low-Ni reactor pressure vessel steels

Energy Technology Data Exchange (ETDEWEB)

Bergner, F., E-mail: f.bergner@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Gillemot, F. [Centre for Energy Research of the Hungarian Academy of Sciences, 29-33 Konkoly-Thege street, 1121 Budapest XII (Hungary); Hernández-Mayoral, M.; Serrano, M. [Division of Materials, CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Török, G. [Wigner Research Center for Physics of the Hungarian Academy of Sciences, 29-33 Konkoly-Thege street, 1121 Budapest XII (Hungary); Ulbricht, A.; Altstadt, E. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)

2015-06-15

Highlights: • TEM and SANS were applied to estimate mean size and number density of loops, nanovoids and Cu-rich clusters. • A three-feature dispersed-barrier hardening model was applied to estimate the yield stress increase. • The values and errors of the dimensionless obstacle strength were estimated in a consistent way. • Nanovoids are stronger obstacles for dislocation glide than dislocation loops, loops are stronger than Cu-rich clusters. • For reactor-relevant conditions, Cu-rich clusters contribute most to hardening due to their high number density. - Abstract: Dislocation loops, nanovoids and Cu-rich clusters (CRPs) are known to represent obstacles for dislocation glide in neutron-irradiated reactor pressure vessel (RPV) steels, but a consistent experimental determination of the respective obstacle strengths is still missing. A set of Cu-bearing low-Ni RPV steels and model alloys was characterized by means of SANS and TEM in order to specify mean size and number density of loops, nanovoids and CRPs. The obstacle strengths of these families were estimated by solving an over-determined set of linear equations. We have found that nanovoids are stronger than loops and loops are stronger than CRPs. Nevertheless, CRPs contribute most to irradiation hardening because of their high number density. Nanovoids were only observed for neutron fluences beyond typical end-of-life conditions of RPVs. The estimates of the obstacle strength are critically compared with reported literature data.

Positron-trapping mechanism at dislocations in Zn

DEFF Research Database (Denmark)

Hidalgo, Carlos; Linderoth, Søren; Diego, Nieves de

1987-01-01

the average lifetime and the intensity of the long component decrease with increasing temperature. The experimental results are very well described in terms of a generalized trapping model where it is assumed that positrons become trapped in deep traps (jogs) via shallow traps (dislocation lines......). The temperature dependence of the positron-lifetime spectra below 120 K is attributed to the temperature dependence of the trapping rate to the dislocation line. The experimental results have demonstrated that detrapping processes from the dislocation line take place above 120 K. The positron binding energy...

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Dislocations and radiation damage in {alpha}-uranium; Dislocations et effets des radiations dans l'uranium {alpha}

Energy Technology Data Exchange (ETDEWEB)

Leteurtre, J [Commissariat a l' Energie Atomique, 92 - Fontenay-Aux-Roses (France). Centre d' Etudes Nucleaires

1968-07-01

Dislocations in {alpha}-uranium were studied by electron microscopy. Electropolishing of thin foils was performed at low temperature (-110 deg. C) to prevent oxidation. Burgers vectors of twins dislocations are defined. Interactions between slip and twinning are studied from both experimental and theoretical point of view. Samples irradiated at several burn-up were examined. In order to explain our micrographic results, and also all information gathered in literature about radiation damage in {alpha}-uranium, a coherent model is propound for the fission particles effects. We analyse the influences of parameters: temperature, dislocation density, impurity content. The number of point defects created by one initial fission is determined for pure and annealed metal. The importance of the self-anneal which occurs immediately in each displacement spike, and the anneal due to a new fission on the damage resulting from a previous fission, are estimated. The focussing distance in [100] direction is found to be about 1000 Angstrom, at 4 deg. K. (author) [French] Ce travail est une etude par microscopie electronique des dislocations induites dans l'uranium {alpha}, soit par deformation plastique, soit par irradiation. Une methode de preparation des lames minces a basse temperature (-110 deg. C) a ete mise au point. Les vecteurs de Burgers des diverses dislocations de macles de ce metal ont ete definis. Les interactions glissements- maclages sont etudiees experimentalement et theoriquement. Des echantillons irradies a divers taux de combustion ont ete examines. Pour expliquer nos resultats micrographiques, et aussi l'ensemble des informations recueillies dans la litterature concernant l'endommagement par irradiation de l'uranium-{alpha}, nous proposons un modele coherent de l'effet des fragments de fission dans ce metal. L'influence des parametres: temperature, densite de dislocations, impuretes est analysee. Le nombre de defauts ponctuels crees par une fission dans du metal

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Science.gov (United States)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

Science.gov (United States)

Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

2017-08-01

This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth

Science.gov (United States)

Bardhan, Abheek; Mohan, Nagaboopathy; Chandrasekar, Hareesh; Ghosh, Priyadarshini; Sridhara Rao, D. V.; Raghavan, Srinivasan

2018-04-01

The bending and interaction of threading dislocations are essential to reduce their density for applications involving III-nitrides. Bending of dislocation lines also relaxes the compressive growth stress that is essential to prevent cracking on cooling down due to tensile thermal expansion mismatch stress while growing on Si substrates. It is shown in this work that surface roughness plays a key role in dislocation bending. Dislocations only bend and relax compressive stresses when the lines intersect a smooth surface. These films then crack. In rough films, dislocation lines which terminate at the bottom of the valleys remain straight. Compressive stresses are not relaxed and the films are relatively crack-free. The reasons for this difference are discussed in this work along with the implications on simultaneously meeting the requirements of films being smooth, crack free and having low defect density for device applications.

Canonical Quantization of Crystal Dislocation and Electron-Dislocation Scattering in an Isotropic Media

Science.gov (United States)

Li, Mingda; Cui, Wenping; Dresselhaus, M. S.; Chen, Gang; MIT Team; Boston College Team

Crystal dislocations govern the plastic mechanical properties of materials but also affect the electrical and optical properties. However, a fundamental and decent quantum-mechanical theory of dislocation remains undiscovered for decades. Here we present an exact and manageable Hamiltonian theory for both edge and screw dislocation line in an isotropic media, where the effective Hamiltonian of a single dislocation line can be written in a harmonic-oscillator-like form, with closed-form quantized 1D phonon-like excitation. Moreover a closed-form, position dependent electron-dislocation coupling strength is obtained, from which we obtained good agreement of relaxation time when comparing with classical results. This Hamiltonian provides a platform to study the effect of dislocation to materials' non-mechanical properties from a fundamental Hamiltonian level.

"Conjugate channeling" effect in dislocation core diffusion: carbon transport in dislocated BCC iron.

Science.gov (United States)

Ishii, Akio; Li, Ju; Ogata, Shigenobu

2013-01-01

Dislocation pipe diffusion seems to be a well-established phenomenon. Here we demonstrate an unexpected effect, that the migration of interstitials such as carbon in iron may be accelerated not in the dislocation line direction ξ, but in a conjugate diffusion direction. This accelerated random walk arises from a simple crystallographic channeling effect. c is a function of the Burgers vector b, but not ξ, thus a dislocation loop possesses the same everywhere. Using molecular dynamics and accelerated dynamics simulations, we further show that such dislocation-core-coupled carbon diffusion in iron has temperature-dependent activation enthalpy like a fragile glass. The 71° mixed dislocation is the only case in which we see straightforward pipe diffusion that does not depend on dislocation mobility.

Distribution of distances between dislocations in different types of dislocation substructures in deformed Cu-Al alloys

Energy Technology Data Exchange (ETDEWEB)

Trishkina, L., E-mail: trishkina.53@mail.ru; Zboykova, N.; Koneva, N., E-mail: koneva@tsuab.ru; Kozlov, E. [Tomsk State University of Architecture and Building, 2 Solyanaya St., Tomsk, 634003 (Russian Federation); Cherkasova, T. [Tomsk State University of Architecture and Building, 2 Solyanaya St., Tomsk, 634003 (Russian Federation); National Research Tomsk Polytechnic University, 50 Lenin Ave., Tomsk, 634050 (Russian Federation)

2016-01-15

The aim of the investigation was the determination of the statistic description of dislocation distribution in each dislocation substructures component forming after different deformation degrees in the Cu-Al alloys. The dislocation structures were investigated by the transmission diffraction electron microscopy method. In the work the statistic description of distance distribution between the dislocations, dislocation barriers and dislocation tangles in the deformed Cu-Al alloys with different concentration of Al and test temperature at the grain size of 100 µm was carried out. It was established that the above parameters influence the dislocation distribution in different types of the dislocation substructures (DSS): dislocation chaos, dislocation networks without disorientation, nondisoriented and disoriented cells, in the walls and inside the cells. The distributions of the distances between dislocations in the investigated alloys for each DSS type formed at certain deformation degrees and various test temperatures were plotted.

Distribution of distances between dislocations in different types of dislocation substructures in deformed Cu-Al alloys

Science.gov (United States)

Trishkina, L.; Cherkasova, T.; Zboykova, N.; Koneva, N.; Kozlov, E.

2016-01-01

The aim of the investigation was the determination of the statistic description of dislocation distribution in each dislocation substructures component forming after different deformation degrees in the Cu-Al alloys. The dislocation structures were investigated by the transmission diffraction electron microscopy method. In the work the statistic description of distance distribution between the dislocations, dislocation barriers and dislocation tangles in the deformed Cu-Al alloys with different concentration of Al and test temperature at the grain size of 100 µm was carried out. It was established that the above parameters influence the dislocation distribution in different types of the dislocation substructures (DSS): dislocation chaos, dislocation networks without disorientation, nondisoriented and disoriented cells, in the walls and inside the cells. The distributions of the distances between dislocations in the investigated alloys for each DSS type formed at certain deformation degrees and various test temperatures were plotted.

Irreducible Traumatic Posterior Shoulder Dislocation

Directory of Open Access Journals (Sweden)

Blake Collier

2017-01-01

Full Text Available History of present illness: A 22-year-old male presented to the Emergency Department complaining of right shoulder pain after a motocross accident. He was traveling at approximately 10 mph around a turn when he lost control and was thrown over the handlebars, landing directly on his right shoulder. On arrival, he was holding his arm in adduction and internal rotation. An area of swelling was noted over his anterior shoulder. He was unable to abduct his shoulder. No humeral gapping was noted. He had normal neuro-vascular status distal to the injury. Significant findings: Radiographs demonstrated posterior displacement of the humeral head on the “Y” view (see white arrow and widening of the glenohumeral joint space on anterior-posterior view (see red arrow. The findings were consistent with posterior dislocation and a Hill-Sachs type deformity. Sedation was performed and reduction was attempted using external rotation, traction counter-traction. An immediate “pop” was felt during the procedure. Post-procedure radiographs revealed a persistent posterior subluxation with interlocking at posterior glenoid. CT revealed posterior dislocation with acute depressed impaction deformity medial to the biceps groove with the humeral head perched on the posterior glenoid, interlocked at reverse Hill-Sachs deformity (see blue arrow. Discussion: Posterior shoulder dislocations are rare and represent only 2% of all shoulder dislocations. Posterior shoulder dislocations are missed on initial diagnosis in more than 60% of cases.1 Posterior shoulder dislocations result from axial loading of the adducted and internally rotated shoulder, violent muscle contractions (resulting from seizures or electrocution, a direct posterior force applied to the anterior shoulder.1 Physical findings include decreased anterior prominence of the humeral head, increased palpable posterior prominence of the humeral head below the acromion, increased palpable prominence of the

Slip-band formation and dislocation kinetics in the stage I deformation of neutron-irradiated copper single crystals

International Nuclear Information System (INIS)

Kitajima, Sadakichi; Shinohara, Kazutoshi; Kutsuwada, Masanori

1995-01-01

The velocity of edge and screw dislocations moving in primary slip bands and the formation rate of primary slip bands were measured in stage I deformation of neutron-irradiated copper single crystals at different strain rates at room temperature using micro-cinematography and optical micrography. The average velocity of edge dislocations was larger at least by one order than that of screw ones, and that of screw dislocations did not depend so strongly on strain rate. The formation rate of primary slip bands was proportional to strain rate. From these results, it is concluded that (1) jogs produced on moving dislocations by cutting dislocation loops result in the difference in velocity between edge and screw dislocations and (2) the change in the density of mobile dislocations as well as velocity of dislocations is responsible for the change of plastic strain rate of a crystal. (author)

Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates

International Nuclear Information System (INIS)

Zhou, H L; Chua, S J; Chow, S Y; Pan, H; Zhu, Y W; Feng, Y P; Wang, L S; Zang, K Y; Liu, W; Tripathy, S

2007-01-01

Using transmission electron microscopy (TEM), the authors have investigated the behavior of threading dislocations in ZnO selectively grown on a facet-controlled epitaxial overgrown GaN template. In this case, the ZnO is grown by a vapor transport method. The TEM study in the overgrown regions shows that all the pure-edge type dislocations in ZnO are parallel toward the mask area and vertical propagation of dislocation to the ZnO surface is minimized. Using such a selective growth technique on a faceted semi-polar GaN surface, a reduction of threading dislocation density in ZnO could be achieved

Core structure, dislocation energy and Peierls stress for 1/3112-bar 0 edge dislocations with (0001) and {11-bar 00} slip planes in α-Zr

International Nuclear Information System (INIS)

Voskoboinikov, R.E.; Osetsky, Yu.N.; Bacon, D.J.

2005-01-01

Atomic-scale simulations of edge dislocations of the 1/3112-bar 0(0001) and 1/3112-bar 0{11-bar 00} slip systems have been carried out using a Finnis-Sinclair-type interatomic potential for α-zirconium. The distribution of atomic displacements in the dislocation core shows that in this model the edge dislocation in the basal plane dissociates into two Shockley partials whereas the dislocation in the prism plane remains undissociated. The effective core radius and core energy are estimated, and dislocation response to increasing applied shear strain is investigated. The core properties and the critical stress for dislocation glide (Peierls stress) depend sensitively on whether the core extends or not

Reply to 'Comment on 'Interaction of a surface wave with a dislocation''

International Nuclear Information System (INIS)

Maurel, Agnes; Pagneux, Vincent; Barra, Felipe; Lund, Fernando

2009-01-01

A subsurface moving dislocation in an elastic half space generates vertical displacements at the free surface. We compare this displacement for two different values of the dislocation viscous drag coefficient. The different resulting surface patterns suggest the free surface plays a decisive dynamical effect. We thus compare this displacement, using the dynamic Green function for an elastic half space, with the result of the calculation using the static Green function for an infinite space, as in the work of Zolotoyabko and Shilo [preceding paper, Phys. Rev. B 80, 136101 (2009), and Shilo and Zolotoyabko, Phys. Rev. Lett. 91, 115506 (2003)] when the dislocation dynamics is the same. Considering the static Green function of an infinite space instead of the correct dynamic Green function of the half space leads to an underestimation of the resulting displacement at the free surface by a factor up to 50 for dislocation depths smaller than one Rayleigh wavelength λ R . We also discuss the constraints that recent ultrasound attenuation and resonant ultrasound spectroscopy experiments place on dislocation parameters, such as density and viscous drag coefficient.

Dislocation glide in Ni-Al solid solutions from the atomic scale up: a molecular dynamics study; Etude du glissement des dislocations dans la solution solide Ni-Al par simulation a l'echelle atomique

Energy Technology Data Exchange (ETDEWEB)

Rodary, E

2003-01-01

The glide of an edge dislocation in solid solutions is studied by molecular dynamics, at fixed temperature and imposed external stress. We have optimized an EAM potential for Ni(1 a 8% A1): it well reproduces the lattice expansion, local atomic order, stacking fault energy as a function of composition, as well as the elastic properties of the {gamma}' phase with L1{sub 2} structure. On increasing the stress, the dislocation is first immobile, then glides with a velocity proportional to the stress and the velocity saturates on reaching the transverse sound velocity. However, only beyond a static threshold stress, {sigma}{sub s}, does the dislocation glide a distance large enough to allow macroscopic shear; the linear part of the velocity-stress curve extrapolates to zero at a dynamical threshold stress, {sigma}{sub d}, The friction coefficient, and the threshold stresses ({sigma}{sub s} and {sigma}{sub d}), increase with the A1 concentration and decrease with temperature (300 and 500 K). Close to the critical shear stress, {sigma}{sub s}, the dislocation glide is analysed with a 'stop and go' model. The latter yields the flight velocity between obstacles, the mean obstacle density and the distribution of the waiting time on each obstacle as a function of stress, composition and temperature. The obstacle to the glide is proposed to be the strong repulsion between Al atoms brought into nearest neighbour position by the glide process, and not the dislocation-solute interaction. The microscopic parameters so defined are introduced into a micro-mechanical model, which well reproduces the known behaviour of nickel base solid solutions. (author)

Application of positron-electron annihilation method for determination of dislocation splitting width in d-transition metals

International Nuclear Information System (INIS)

Dekhtyar, A.I.; Kozyrskij, G.Ya.; Kononenko, V.A.

1978-01-01

A method for the study of the dislocation structure in d-transition metals with the application of experimental data on annihilation of electron-positron pairs is suggested. The method is based on finding the density of partially collectivized d- electrons using the technique of expanding the angular distribution of the positron-electron annihilation. In the wave vectors space, the concept of a pseudosphere was introduced, whose radius k'sub(F) is determined by the number of d-electrons. It was assumed that k'sub(F) is a parameter of the potential of effective atomic interaction in d-metals. The interaction energy between nuclei of partial dislocations was accounted for as an oscillating potential between parallel atom rows. Such a consideration makes it possible to correct the position of a partial dislocation in the neighbourhood of a wide minimum of interaction energy. The possibilities of the method for determining the splitting width of edge dislocations in various d-metals and their alloys (Mo, Ni, Fe, Nb) is shown. Using pure and doped Ni, the decrease of the packing defect energy was traced with the increase of Al content

Dislocation glide in Ni-Al solid solutions from the atomic scale up: a molecular dynamics study

International Nuclear Information System (INIS)

Rodary, E.

2003-01-01

The glide of an edge dislocation in solid solutions is studied by molecular dynamics, at fixed temperature and imposed external stress. We have optimized an EAM potential for Ni(1 a 8% A1): it well reproduces the lattice expansion, local atomic order, stacking fault energy as a function of composition, as well as the elastic properties of the γ' phase with L1 2 structure. On increasing the stress, the dislocation is first immobile, then glides with a velocity proportional to the stress and the velocity saturates on reaching the transverse sound velocity. However, only beyond a static threshold stress, σ s , does the dislocation glide a distance large enough to allow macroscopic shear; the linear part of the velocity-stress curve extrapolates to zero at a dynamical threshold stress, σ d , The friction coefficient, and the threshold stresses (σ s and σ d ), increase with the A1 concentration and decrease with temperature (300 and 500 K). Close to the critical shear stress, σ s , the dislocation glide is analysed with a 'stop and go' model. The latter yields the flight velocity between obstacles, the mean obstacle density and the distribution of the waiting time on each obstacle as a function of stress, composition and temperature. The obstacle to the glide is proposed to be the strong repulsion between Al atoms brought into nearest neighbour position by the glide process, and not the dislocation-solute interaction. The microscopic parameters so defined are introduced into a micro-mechanical model, which well reproduces the known behaviour of nickel base solid solutions. (author)

Dislocation Dynamics During Plastic Deformation

CERN Document Server

Messerschmidt, Ulrich

2010-01-01

The book gives an overview of the dynamic behavior of dislocations and its relation to plastic deformation. It introduces the general properties of dislocations and treats the dislocation dynamics in some detail. Finally, examples are described of the processes in different classes of materials, i.e. semiconductors, ceramics, metals, intermetallic materials, and quasicrystals. The processes are illustrated by many electron micrographs of dislocations under stress and by video clips taken during in situ straining experiments in a high-voltage electron microscope showing moving dislocations. Thus, the users of the book also obtain an immediate impression and understanding of dislocation dynamics.

Dislocations and radiation damage in {alpha}-uranium; Dislocations et effets des radiations dans l'uranium {alpha}

Energy Technology Data Exchange (ETDEWEB)

Leteurtre, J. [Commissariat a l' Energie Atomique, 92 - Fontenay-Aux-Roses (France). Centre d' Etudes Nucleaires

1968-07-01

Dislocations in {alpha}-uranium were studied by electron microscopy. Electropolishing of thin foils was performed at low temperature (-110 deg. C) to prevent oxidation. Burgers vectors of twins dislocations are defined. Interactions between slip and twinning are studied from both experimental and theoretical point of view. Samples irradiated at several burn-up were examined. In order to explain our micrographic results, and also all information gathered in literature about radiation damage in {alpha}-uranium, a coherent model is propound for the fission particles effects. We analyse the influences of parameters: temperature, dislocation density, impurity content. The number of point defects created by one initial fission is determined for pure and annealed metal. The importance of the self-anneal which occurs immediately in each displacement spike, and the anneal due to a new fission on the damage resulting from a previous fission, are estimated. The focussing distance in [100] direction is found to be about 1000 Angstrom, at 4 deg. K. (author) [French] Ce travail est une etude par microscopie electronique des dislocations induites dans l'uranium {alpha}, soit par deformation plastique, soit par irradiation. Une methode de preparation des lames minces a basse temperature (-110 deg. C) a ete mise au point. Les vecteurs de Burgers des diverses dislocations de macles de ce metal ont ete definis. Les interactions glissements- maclages sont etudiees experimentalement et theoriquement. Des echantillons irradies a divers taux de combustion ont ete examines. Pour expliquer nos resultats micrographiques, et aussi l'ensemble des informations recueillies dans la litterature concernant l'endommagement par irradiation de l'uranium-{alpha}, nous proposons un modele coherent de l'effet des fragments de fission dans ce metal. L'influence des parametres: temperature, densite de dislocations, impuretes est analysee. Le nombre de defauts ponctuels crees

Trans-triquetral Perilunate fracture dislocation

OpenAIRE

John-Henry Rhind; Abhinav Gulihar; Andrew Smith

2018-01-01

Perilunate dislocations and perilunate fracture dislocations are rare and serious injuries. Perilunate dislocations represent less than 10% of all carpal injuries of which 61% represent transcaphoid fractures. Because of their rarity, up to 25% of perilunate dislocations are initially missed on first assessment. We present the case of a 66-year-old-gentleman who sustained an isolated trans-triquetral perilunate fracture dislocation while walking his dog. This was diagnosed in the emergency de...

Nanoscale dislocation shear loops at static equilibrium and finite temperature

Science.gov (United States)

Dang, Khanh; Capolungo, Laurent; Spearot, Douglas E.

2017-12-01

Atomistic simulations are used to determine the resolved shear stress necessary for equilibrium and the resulting geometry of nanoscale dislocation shear loops in Al. Dislocation loops with different sizes and shapes are created via superposition of elemental triangular dislocation displacement fields in the presence of an externally imposed shear stress. First, a bisection algorithm is developed to determine systematically the resolved shear stress necessary for equilibrium at 0 K. This approach allows for the identification of dislocation core structure and a correlation between dislocation loop size, shape and the computed shear stress for equilibrium. It is found, in agreement with predictions made by Scattergood and Bacon, that the equilibrium shape of a dislocation loop becomes more circular with increasing loop size. Second, the bisection algorithm is extended to study the influence of temperature on the resolved shear stress necessary for stability. An approach is presented to compute the effective lattice friction stress, including temperature dependence, for dislocation loops in Al. The temperature dependence of the effective lattice friction stress can be reliably computed for dislocation loops larger than 16.2 nm. However, for dislocation loops smaller than this threshold, the effective lattice friction stress shows a dislocation loop size dependence caused by significant overlap of the stress fields on the interior of the dislocation loops. Combined, static and finite temperature atomistic simulations provide essential data to parameterize discrete dislocation dynamics simulations.

Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect

Science.gov (United States)

Barabash, R. I.; Ice, G. E.; Tamura, N.; Valek, B. C.; Bravman, J. C.; Spolenak, R.; Patel, J. R.

2003-05-01

Electromigration during accelerated testing can induce plastic deformation in apparently undamaged Al interconnect lines as recently revealed by white beam scanning x-ray microdiffraction. In the present article, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking during the early stages of electromigration. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined. The origin of the observed plastic deformation is considered in view of the constraints for dislocation arrangements under the applied electric field during electromigration.

Dislocations and vacancies in two-dimensional mixed crystals of spheres and dimers

KAUST Repository

Gerbode, Sharon J.

2010-10-15

In colloidal crystals of spheres, dislocation motion is unrestricted. On the other hand, recent studies of relaxation in crystals of colloidal dimer particles have demonstrated that the dislocation dynamics in such crystals are reminiscent of glassy systems. The observed glassy dynamics arise as a result of dislocation cages formed by certain dimer orientations. In the current study, we use experiments and simulations to investigate the transition that arises when a pure sphere crystal is doped with an increasing concentration of dimers. Specifically, we focus on both dislocation caging and vacancy motion. Interestingly, we find that any nonzero fraction of dimers introduces finite dislocation cages, suggesting that glassy dynamics are present for any mixed crystal. However, we have also identified a vacancy-mediated uncaging mechanism for releasing dislocations from their cages. This mechanism is dependent on vacancy diffusion, which slows by orders of magnitude as the dimer concentration is increased. We propose that in mixed crystals with low dimer concentrations vacancy diffusion is fast enough to uncage dislocations and delay the onset of glassy dislocation dynamics. © 2010 The American Physical Society.

Dislocations and vacancies in two-dimensional mixed crystals of spheres and dimers

KAUST Repository

Gerbode, Sharon J.; Ong, Desmond C.; Liddell, Chekesha M.; Cohen, Itai

2010-01-01

In colloidal crystals of spheres, dislocation motion is unrestricted. On the other hand, recent studies of relaxation in crystals of colloidal dimer particles have demonstrated that the dislocation dynamics in such crystals are reminiscent of glassy systems. The observed glassy dynamics arise as a result of dislocation cages formed by certain dimer orientations. In the current study, we use experiments and simulations to investigate the transition that arises when a pure sphere crystal is doped with an increasing concentration of dimers. Specifically, we focus on both dislocation caging and vacancy motion. Interestingly, we find that any nonzero fraction of dimers introduces finite dislocation cages, suggesting that glassy dynamics are present for any mixed crystal. However, we have also identified a vacancy-mediated uncaging mechanism for releasing dislocations from their cages. This mechanism is dependent on vacancy diffusion, which slows by orders of magnitude as the dimer concentration is increased. We propose that in mixed crystals with low dimer concentrations vacancy diffusion is fast enough to uncage dislocations and delay the onset of glassy dislocation dynamics. © 2010 The American Physical Society.

The Role of Geometrically Necessary Dislocations in Cantilever Beam Bending Experiments of Single Crystals

Directory of Open Access Journals (Sweden)

Edgar Husser

2017-03-01

Full Text Available The mechanical behavior of single crystalline, micro-sized copper is investigated in the context of cantilever beam bending experiments. Particular focus is on the role of geometrically necessary dislocations (GNDs during bending-dominated load conditions and their impact on the characteristic bending size effect. Three different sample sizes are considered in this work with main variation in thickness. A gradient extended crystal plasticity model is presented and applied in a three-dimensional finite-element (FE framework considering slip system-based edge and screw components of the dislocation density vector. The underlying mathematical model contains non-standard evolution equations for GNDs, crystal-specific interaction relations, and higher-order boundary conditions. Moreover, two element formulations are examined and compared with respect to size-independent as well as size-dependent bending behavior. The first formulation is based on a linear interpolation of the displacement and the GND density field together with a full integration scheme whereas the second is based on a mixed interpolation scheme. While the GND density fields are treated equivalently, the displacement field is interpolated quadratically in combination with a reduced integration scheme. Computational results indicate that GND storage in small cantilever beams strongly influences the evolution of statistically stored dislocations (SSDs and, hence, the distribution of the total dislocation density. As a particular example, the mechanical bending behavior in the case of a physically motivated limitation of GND storage is studied. The resulting impact on the mechanical bending response as well as on the predicted size effect is analyzed. Obtained results are discussed and related to experimental findings from the literature.

Frenkel defect absorption on dislocations and dislocation discharge rate. Modeling determination of the absorption zone

International Nuclear Information System (INIS)

Mikhlin, Eh.Ya.

1988-01-01

A situation connected with the fact that evaluations of dislocation discharge strength which somehow or other are based on the elasticity theory in the dislocation nucleus or near it, do not lead to results complying with experimental data, is discussed. Bases of the alternative approach to this problem consisting in direct investigation into the process of Frenkel defect absorption on dislocation by its computerized simulation at the microscopic level are also presented. Methods of investigation and results are described using α dislocation in iron-alpha as an example. The concept of zones of vacancy and interstitial atom absorption on dislocation is discussed. It is shown that a spontaneous transition, performed by any of these defects near a dislocation is not always identical to absorption and usually appears to be only a part of a multistage process leading to the defect disappearance. Potential relief characteristics for vacancy movement near the dislocation are found. An area wide enough in a transverse direction is found around the dislocation. Vacncies reaching this area can be easily transported to places of their disappearance. Therefore the vacancy entry to this area is equivalent to the absorption. the procedure of simulating the atomic structure of a crystallite containing a dislocation with a step is described. Positions from which these defects perform spontaneous transitions, reaching the disappearance places are found on the dislocation near the step

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

International Nuclear Information System (INIS)

Arslan, Engin; Ozbay, Ekmel; Altındal, Şemsettin; Özçelik, Süleyman

2009-01-01

The forward current–voltage–temperature characteristics of (Ni/Au)–Al 0.83 In 0.17 N/AlN/GaN heterostructures were studied in a temperature range of 80–375 K. The temperature dependences of the tunneling saturation current (I t ) and tunneling parameters (E 0 ) were obtained. Weak temperature dependence of the saturation current and the absence of temperature dependence of the tunneling parameters were observed in this temperature range. The results indicate that in the temperature range of 80–375 K, the mechanism of charge transport in the (Ni/Au)–Al 0.83 In 0.17 N/AlN/GaN heterostructure is performed by tunneling among dislocations intersecting the space-charge region. A model is used for nonuniform tunneling along these dislocations that intersect the space-charge region. The dislocation density that was calculated from the current–voltage characteristics, according to a model of tunneling along the dislocation line, gives the value 7.4 × 10 8 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements value of 5.9 × 10 8 cm −2 . These data show that the current flows manifest a tunneling character, even at room temperature

Self-force on dislocation segments in anisotropic crystals

International Nuclear Information System (INIS)

Fitzgerald, S P; Aubry, S

2010-01-01

A dislocation segment in a crystal experiences a 'self-force', by virtue of the orientation dependence of its elastic energy. If the crystal is elastically isotropic, this force is manifested as a couple acting to rotate the segment toward the lower energy of the pure screw orientation (i.e. acting to align the dislocation line with its Burgers vector). If the crystal is anisotropic, there are additional contributions to the couple, arising from the more complex energy landscape of the lattice itself. These effects can strongly influence the dynamic evolution of dislocation networks, and via their governing role in dislocation multiplication phenomena, control plastic flow in metals. In this paper we develop a model for dislocation self-forces in a general anisotropic crystal, and briefly consider the technologically important example of α-iron, which becomes increasingly anisotropic as the temperature approaches that of the α-γ phase transition at 912 0 C.

Atomic-scale details of dislocation-stacking fault tetrahedra interaction

International Nuclear Information System (INIS)

Osetsky, Yu. N.; Stoller, R.E.; Rodney, D.; Bacon, D.J.

2005-01-01

Stacking fault tetrahedra (SFTs) are formed during irradiation of f.c.c. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. Key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100 nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Science.gov (United States)

Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

2012-07-01

An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

Observation and analysis of defect cluster production and interactions with dislocations

International Nuclear Information System (INIS)

Zinkle, S.J.; Matsukawa, Y.

2004-01-01

The current understanding of defect production fundamentals in neutron-irradiated face centered cubic (FCC) and body centered cubic (BCC) metals is briefly reviewed, based primarily on transmission electron microscope observations. Experimental procedures developed by Michio Kiritani and colleagues have been applied to quantify defect cluster size, density, and nature. Differences in defect accumulation behavior of irradiated BCC and FCC metals are discussed. Depending on the defect cluster obstacle strength, either the dispersed barrier hardening model or the Friedel-Kroupa-Hirsch weak barrier model can be used to describe major aspects of radiation hardening. Irradiation at low temperature can cause a change in deformation mode from dislocation cell formation at low doses to twinning or dislocation channeling at higher doses. The detailed interaction between dislocations and defect clusters helps determine the dominant deformation mode. Recent observations of the microstructure created by plastic deformation of quenched and irradiated metals are summarized, including in situ deformation results. Examples of annihilation of stacking fault tetrahedra by gliding dislocations and subsequent formation of mobile superjogs are shown

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Energy Technology Data Exchange (ETDEWEB)

Horton, M. K., E-mail: m.horton11@imperial.ac.uk [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Rhode, S. L. [Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moram, M. A. [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-08-14

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

International Nuclear Information System (INIS)

Horton, M. K.; Rhode, S. L.; Moram, M. A.

2014-01-01

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12 ¯ 10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

Science.gov (United States)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Magnetic resonance findings in knee dislocation: pictorial essay

International Nuclear Information System (INIS)

Coates, M.; Stewart, N.; Morganti, V.; Twaddle, B.

2000-01-01

The role of MRI in the preoperative assessment of knee dislocation is well documented. e present our experience with a series of images graphically displaying the spectrum of abnormalities associated with these injuries. These images were derived from a local internal audit reviewing the preoperative MRI and correlating this with the surgical findings. Twenty-two cases between April 1997 and April 1999 were reviewed. Traumatic dislocation of the knee is rare, although many believe it is often unrecognized because of spontaneous reduction.' The injury may present as (i) frank dislocation; (ii) a knee that is dislocated while under anaesthesia; or (iii) a pattern of soft-tissue injury which suggests dislocation. Dislocation is described by the position of the tibia relative to the femur and may be anterior, posterior, lateral, medial or rotatory. Conservative management has traditionally been advocated and in this setting clinical examination and plain radiographs are adequate. Because of the trend toward increased surgical intervention, however, the more accurate characterization of soft-tissue injuries provided by MRI aids the planning of ligamentous reconstruction and the operative approach. Copyright (1999) Blackwell Science Pty Ltd

Medial subtalar dislocation: Case report

Directory of Open Access Journals (Sweden)

Manojlović Radovan

2010-01-01

Full Text Available Introduction. Subtalar dislocation (SI is a term that refers to an injury in which there is dislocation of the talonavicular and talocalcanear joint, although the tibiotalar joint is intact. Case Outline. A case of medial subtalar dislocation as a result of basketball injury, so-called 'basketball foot', is presented. Closed reposition in i.v. anaesthesia was performed with the patient in supine position and a knee flexed at 90 degrees. Longitudinal manual traction in line of deformity was carried out in plantar flexion. The reposition continued with abduction and eversion simultaneously increasing dorsiflexion. It was made in the first attempt and completed instantly. Rehabilitation was initiated after 5 weeks of immobilization. One year after the injury, the functional outcome was excellent with full range of motion and the patient was symptom-free. For better interpretation of roentgenogram, bone model of subtalar dislocation was made using the cadaver bone. Conclusion. Although the treatment of such injury is usually successful, diagnosis can be difficult because it is a rare injury, and moreover, X-ray of the injury can be confusing due to superposition of bones. Radiograms revealed superposition of the calcaneus, tarsal and metatarsal bones which was radiographically visualized in the anterior-posterior projection as one osseous block inward from the talus, and on the lateral view as in an osteal block below the tibial bone. Prompt recognition of these injuries followed by proper, delicately closed reduction under anaesthesia is crucial for achieving a good functional result in case of medial subtalar dislocation.

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2018-04-01

The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

Properties of dislocations in Cu(In,Ga)Se2 film and their formation during growth

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Jens; Boit, Christian [Technische Universitaet Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Niermann, Tore; Lehmann, Michael [Technische Universitaet Berlin, Institute of Optics and Atomic Physics, Hardenbergstrasse 36, 10623 Berlin (Germany)

2012-07-01

Transmission electron microscopy (TEM) studies were performed on Cu(In,Ga)Se2 (CIGSe) thin films for solar cells with a special focus on dislocations. A sample series of glass/Mo/CIGSe stacks with varying [Cu]/([Ga]+[In]) ratio were prepared by interrupting the growth processes at several stages. TEM imaging and elemental distribution maps by energy-dispersive X-ray spectroscopy gave structural and compositional information at certain film growth states. Furthermore, high resolution TEM imaging was used to confirm a structural model of dislocations in complete CIGSe solar cells and by means of in-line electron holography we examined changes in the mean inner potential. A decrease of the mean inner potential at the position of the dislocations was observed. This might be attributed to a change of the atomic density due to the dislocation, a local segregation or a charge at the dislocation core.

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Moseley, Michael; Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

2014-01-01

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al 0.7 Ga 0.3 N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al 0.7 Ga 0.3 N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations

The separate roles of subgrains and forest dislocations in the isotropic hardening of type 304 stainless steel

International Nuclear Information System (INIS)

Kassner, M.E.; Miller, A.K.; Sherby, O.D.

1982-01-01

Tests on 304 stainless steel were conducted involving first warm working in torsion, then cold working in torsion, and finally measurement of the elevated-temperature yield strength in compression. These tests permitted separation of the effects of subgrain size and forest dislocation density on the isotropic part of the flow stress. Forest dislocation strengthening appears to dominate in this material. Th results are best fitted by a root-mean-square summation of strength terms representing the contributions of solutes, forest dislocations, and subgrain boundaries. The same equation successfully predicts the flow stress during elevated-temperature transient deformation (under both constant strain rate and variable strain rate) from the transient dislocation substructure

Mechanisms for decoration of dislocations by small dislocation loops under cascade damage conditions

DEFF Research Database (Denmark)

Trinkaus, H.; Singh, B.N.; Foreman, A.J.E.

1997-01-01

. This effect may arise as a result of either (a) migration and enhanced agglomeration of single SIAs in the form of loops in the strain field of the dislocation or (b) glide and trapping of SIA loops (produced directly in the cascades) in the strain field of the dislocation, In the present paper, both...... of these possibilities are examined. It is shown that the strain field of the dislocation causes a SIA depletion in the compressive as well as in the dilatational region resulting in a reduced rather than enhanced agglomeration of SIAs. (SIA depletion may, however, induce enhanced vacancy agglomeration near dislocations...

High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

International Nuclear Information System (INIS)

Tanaka, Masaki; Higashida, Kenji

2005-01-01

Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals

Atomic-scale investigation of point defects and hydrogen-solute atmospheres on the edge dislocation mobility in alpha iron

Energy Technology Data Exchange (ETDEWEB)

Bhatia, M. A.; Solanki, K. N., E-mail: kiran.solanki@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Groh, S. [Institute of Mechanics and Fluid Dynamics, TU Bergakademie Freiberg, Freiberg 09556 (Germany)

2014-08-14

In this study, we present atomistic mechanisms of 1/2 [111](11{sup ¯}0) edge dislocation interactions with point defects (hydrogen and vacancies) and hydrogen solute atmospheres in body centered cubic (bcc) iron. In metals such as iron, increases in hydrogen concentration can increase dislocation mobility and/or cleavage-type decohesion. Here, we first investigate the dislocation mobility in the presence of various point defects, i.e., change in the frictional stress as the edge dislocation interacts with (a) vacancy, (b) substitutional hydrogen, (c) one substitutional and one interstitial hydrogen, (d) interstitial hydrogen, (e) vacancy and interstitial hydrogen, and (f) two interstitial hydrogen. Second, we examine the role of a hydrogen-solute atmosphere on the rate of local dislocation velocity. The edge dislocation simulation with a vacancy in the compression side of the dislocation and an interstitial hydrogen atom at the tension side exhibit the strongest mechanical response, suggesting a higher potential barrier and hence, the higher frictional stress (i.e., ∼83% higher than the pure iron Peierls stress). In the case of a dislocation interacting with a vacancy on the compressive side, the vacancy binds with the edge dislocation, resulting in an increase in the friction stress of about 28% when compared with the Peierls stress of an edge dislocation in pure iron. Furthermore, as the applied strain increases, the vacancy migrates through a dislocation transportation mechanism by attaining a velocity of the same order as the dislocation velocity. For the case of the edge dislocation interacting with interstitial hydrogen on the tension side, the hydrogen atom jumps through one layer perpendicular to the glide plane during the pinning-unpinning process. Finally, our simulation of dislocation interactions with hydrogen show first an increase in the local dislocation velocity followed by a pinning of the dislocation core in the atmosphere, resulting in

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

International Nuclear Information System (INIS)

Takeuchi, S.; Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

2015-01-01

We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results

Discrete dislocation modelling of submicron indentation

NARCIS (Netherlands)

Widjaja, A; Van der Giessen, E; Needleman, A

2005-01-01

Indentation of a planar single crystal by a circular rigid indenter is analyzed using discrete dislocation plasticity. The crystal has three slip systems and is initially dislocation-free, but edge dislocations can nucleate from point sources inside the crystal. The lattice resistance to dislocation

Dislocated Shoulder: Symptoms and Causes

Science.gov (United States)

... caused by: Sports injuries. Shoulder dislocation is a common injury in contact sports, such as football and hockey, and in sports that may involve falls, such as downhill skiing, gymnastics and volleyball. ... is a common source of dislocation. Falls. You may dislocate your ...

Traumatic hip dislocations in children

International Nuclear Information System (INIS)

Minhas, M.S.

2010-01-01

Objectives: To evaluate clinical features, treatment and relationship to the time period between dislocation, reduction and early complications of traumatic dislocation of hip in children. Methods: Case series conducted at Jinnah Post Graduate Medical Centre Karachi from July 2005 to August 2009. Children with traumatic hip dislocation up to fifteen years of age who presented in last four years were included in this study. Their clinical information, etiology, associated injuries, duration, method of reduction and early complications are evaluated through emergency room proforma and indoor record. Follow up of patient was updated in outpatient department. Results: We had eight patients, six boys and two girls. Youngest 2.4 years and eldest was 12 years with mean age of 6.2 +- 3.8 years. All presented with posterior hip dislocation. Etiology was road traffic accident in two and history of fall in remaining six patients. Average duration of time between dislocation and reduction was 19 hours range 3-72 hours. Dislocated hips were reduced under General Anaesthesia in two patients and under sedation analgesia in six patients. No complications were noted in eight cases with mean 18.75 +- 13.23 months follows up. Conclusion: Traumatic hip dislocation in children is not rare. Slight trauma causes dislocation in younger age and immediate closed reduction and Immobilization reduces complications. (author

Asymptotic Analysis of a System of Algebraic Equations Arising in Dislocation Theory

KAUST Repository

Hall, Cameron L.; Chapman, S. Jonathan; Ockendon, John R.

2010-01-01

The system of algebraic equations given by σn j=0, j≠=i sgn(xi-xj )|xi-xj|a = 1, i = 1, 2, ⋯ , n, x0 = 0, appears in dislocation theory in models of dislocation pile-ups. Specifically, the case a = 1 corresponds to the simple situation where n dislocations are piled up against a locked dislocation, while the case a = 3 corresponds to n dislocation dipoles piled up against a locked dipole. We present a general analysis of systems of this type for a > 0 and n large. In the asymptotic limit n→∞, it becomes possible to replace the system of discrete equations with a continuum equation for the particle density. For 0 < a < 2, this takes the form of a singular integral equation, while for a > 2 it is a first-order differential equation. The critical case a = 2 requires special treatment, but, up to corrections of logarithmic order, it also leads to a differential equation. The continuum approximation is valid only for i neither too small nor too close to n. The boundary layers at either end of the pile-up are also analyzed, which requires matching between discrete and continuum approximations to the main problem. © 2010 Society for Industrial and Applied Mathematics.

[Classification and Treatment of Sacroiliac Joint Dislocation].

Science.gov (United States)

Tan, Zhen; Huang, Zhong; Li, Liang; Meng, Wei-Kun; Liu, Lei; Zhang, Hui; Wang, Guang-Lin; Huang, Fu-Guo

2017-09-01

To develop a renewed classification and treatment regimen for sacroiliac joint dislocation. According to the direction of dislocation of sacroiliac joint,combined iliac,sacral fractures,and fracture morphology,sacroiliac joint dislocation was classified into 4 types. Type Ⅰ (sacroiliac anterior dislocation): main fracture fragments of posterior iliac wing dislocated in front of sacroiliac joint. Type Ⅱ (sacroiliac posterior dislocation): main fracture fragments of posterior iliac wing dislocated in posterior of sacroiliac joint. Type Ⅲ (Crescent fracturedislocation of the sacroiliac joint): upward dislocation of posterior iliac wing with oblique fracture through posterior iliac wing. Type ⅢA: a large crescent fragment and dislocation comprises no more than onethird of sacroiliac joint,which is typically inferior. Type ⅢB: intermediatesize crescent fragment and dislocation comprises between one and twothirds of joint. Type ⅢC: a small crescent fragment where dislocation comprises most,but not the entire joint. Different treatment regimens were selected for different types of fractures. Treatment for type Ⅰ sacroiliac joint dislocation: anterior iliac fossa approach pry stripping reset; sacroiliac joint fixed with sacroiliac screw through percutaneous. Treatment for type Ⅱ sacroiliac joint dislocation: posterior sacroiliac joint posterior approach; sacroiliac joint fixed with sacroiliac screw under computer guidance. Treatment for type ⅢA and ⅢB sacroiliac joint dislocation: posterior sacroiliac joint approach; sacroiliac joint fixed with reconstruction plate. Treatment for type ⅢC sacroiliac joint dislocation: sacroiliac joint closed reduction; sacroiliac joint fixed with sacroiliac screw through percutaneous. Treatment for type Ⅳ sacroiliac joint dislocation: posterior approach; sacroiliac joint fixed with spinal pelvic fixation. Results of 24 to 72 months patient follow-up (mean 34.5 months): 100% survival,100% wound healing,and 100

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Energy Technology Data Exchange (ETDEWEB)

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Hybrid dislocated control and general hybrid projective dislocated synchronization for the modified Lue chaotic system

International Nuclear Information System (INIS)

Xu Yuhua; Zhou Wuneng; Fang Jianan

2009-01-01

This paper introduces a modified Lue chaotic system, and some basic dynamical properties are studied. Based on these properties, we present hybrid dislocated control method for stabilizing chaos to unstable equilibrium and limit cycle. In addition, based on the Lyapunov stability theorem, general hybrid projective dislocated synchronization (GHPDS) is proposed, which includes complete dislocated synchronization, dislocated anti-synchronization and projective dislocated synchronization as its special item. The drive and response systems discussed in this paper can be strictly different dynamical systems (including different dimensional systems). As examples, the modified Lue chaotic system, Chen chaotic system and hyperchaotic Chen system are discussed. Numerical simulations are given to show the effectiveness of these methods.

Hybrid dislocated control and general hybrid projective dislocated synchronization for the modified Lue chaotic system

Energy Technology Data Exchange (ETDEWEB)

Xu Yuhua [College of Information Science and Technology, Donghua University, Shanghai 201620 (China) and Department of Maths, Yunyang Teacher' s College, Hubei 442000 (China)], E-mail: yuhuaxu2004@163.com; Zhou Wuneng [College of Information Science and Technology, Donghua University, Shanghai 201620 (China)], E-mail: wnzhou@163.com; Fang Jianan [College of Information Science and Technology, Donghua University, Shanghai 201620 (China)

2009-11-15

This paper introduces a modified Lue chaotic system, and some basic dynamical properties are studied. Based on these properties, we present hybrid dislocated control method for stabilizing chaos to unstable equilibrium and limit cycle. In addition, based on the Lyapunov stability theorem, general hybrid projective dislocated synchronization (GHPDS) is proposed, which includes complete dislocated synchronization, dislocated anti-synchronization and projective dislocated synchronization as its special item. The drive and response systems discussed in this paper can be strictly different dynamical systems (including different dimensional systems). As examples, the modified Lue chaotic system, Chen chaotic system and hyperchaotic Chen system are discussed. Numerical simulations are given to show the effectiveness of these methods.

Coarse-grained elastodynamics of fast moving dislocations

International Nuclear Information System (INIS)

Xiong, Liming; Rigelesaiyin, Ji; Chen, Xiang; Xu, Shuozhi; McDowell, David L.; Chen, Youping

2016-01-01

The fundamental mechanism of dynamic plasticity in metallic materials subjected to shock loading remains unclear because it is difficult to obtain the precise information of individual fast moving dislocations in metals from the state-of-the-art experiments. In this work, the dynamics of sonic dislocations in anisotropic crystalline materials is explored through a concurrent atomistic-continuum modeling method. We make a first attempt to characterize the complexity of nonuniformly moving dislocations in anisotropic crystals from atomistic to microscale, including the energy intensities as well as the wavelengths of acoustic phonons emitted from sonic dislocations, and the velocity-dependent stress fluctuations around the core of nonuniformly moving dislocations. Instantaneous dislocation velocities and phonon drag effects on the dislocation motions are quantified and analyzed. Mach cones in a V-shaped pattern of the phonon wave-fronts are observed in the wake of the sonic dislocations. Analysis of simulation results based on a wavelet transform show that the faster a dislocation is moving, the longer the emitted phonon wavelength. The dislocation velocity drops dramatically with the occurrence of the interactions between dislocations and phonon waves reflected from the boundaries of specimens. The concurrent atomistic-continuum modeling framework is demonstrated to be the first multiscale method that explicitly treats the strong coupling between the long-range elastic fields away from the dislocation core, the highly nonlinear time-dependent stress field within the core, and the evolutions of the atomic-scale dislocation core structures. As such, it is shown that this method is capable in predicting elastodynamics of dislocations in the presence of inertia effects associated with sonic dislocations in micron-sized anisotropic crystalline materials from the atomic level, which is not directly accessible to the recent elastodynamic discrete dislocation model.

Alloying effects of refractory elements in the dislocation of Ni-based single crystal superalloys

Directory of Open Access Journals (Sweden)

Shiyu Ma

2016-12-01

Full Text Available The alloying effects of W, Cr and Re in the [100] (010 edge dislocation cores (EDC of Ni-based single crystal superalloys are investigated using first-principles based on the density functional theory (DFT. The binding energy, Mulliken orbital population, density of states, charge density and radial distribution functions are discussed, respectively. It is clearly demonstrated that the addition of refractory elements improves the stability of the EDC systems. In addition, they can form tougher bonds with their nearest neighbour (NN Ni atoms, which enhance the mechanical properties of the Ni-based single crystal superalloys. Through comparative analysis, Cr-doped system has lower binding energy, and Cr atom has evident effect to improve the systemic stability. However, Re atom has the stronger alloying effect in Ni-based single crystal superalloys, much more effectively hindering dislocation motion than W and Cr atoms.

Epidemiology of Isolated Acromioclavicular Joint Dislocation

Directory of Open Access Journals (Sweden)

Claudio Chillemi

2013-01-01

Full Text Available Background. Acromioclavicular (AC joint dislocation is a common shoulder problem. However, information about the basic epidemiological features of this condition is scarce. The aim of this study is to analyze the epidemiology of isolated AC dislocation in an urban population. Materials and Methods. A retrospective database search was performed to identify all patients with an AC dislocation over a 5-year period. Gender, age, affected side and traumatic mechanism were taken into account. X-rays were reviewed by two of the authors and dislocations were classified according to the Rockwood’s criteria. Results. A total of 108 patients, with a mean age of 37.5 years were diagnosed with AC dislocation. 105 (97.2% had an isolated AC dislocation, and 3 (2.8% were associated with a clavicle fracture. The estimated incidence was 1.8 per 10000 inhabitants per year and the male-female ratio was 8.5 : 1. 50.5% of all dislocations occurred in individuals between the ages of 20 and 39 years. The most common traumatic mechanism was sport injury and the most common type of dislocation was Rockwood type III. Conclusions. Age between 20 and 39 years and male sex represent significant demographic risk factors for AC dislocation.

Theory of interacting dislocations on cylinders.

Science.gov (United States)

Amir, Ariel; Paulose, Jayson; Nelson, David R

2013-04-01

We study the mechanics and statistical physics of dislocations interacting on cylinders, motivated by the elongation of rod-shaped bacterial cell walls and cylindrical assemblies of colloidal particles subject to external stresses. The interaction energy and forces between dislocations are solved analytically, and analyzed asymptotically. The results of continuum elastic theory agree well with numerical simulations on finite lattices even for relatively small systems. Isolated dislocations on a cylinder act like grain boundaries. With colloidal crystals in mind, we show that saddle points are created by a Peach-Koehler force on the dislocations in the circumferential direction, causing dislocation pairs to unbind. The thermal nucleation rate of dislocation unbinding is calculated, for an arbitrary mobility tensor and external stress, including the case of a twist-induced Peach-Koehler force along the cylinder axis. Surprisingly rich phenomena arise for dislocations on cylinders, despite their vanishing Gaussian curvature.

High Temperature Magneto-Elastic Instability of Dislocations in bcc Iron

International Nuclear Information System (INIS)

Dudarev, S.; Bullough, R.; Gilbert, M.; Derlet, P.

2007-01-01

Full text of publication follows: Density functional calculations show that the low temperature structure of self-interstitial defects in iron is fundamentally different from the structure of self-interstitial defects in all the other bcc metals. The origin of this anomaly is associated with the magnetic part of the cohesive energy of iron, where the Stoner exchange term stabilizes the body centred cubic phase, and where the magnetic part of energy is strongly affected by the large strain associated with the core region of an interstitial defect. At elevated temperatures magnetic excitations erode the stability of the bcc phase, giving rise to the gradual softening of the 110 transverse acoustic phonon modes and to the α-γ bcc-fcc martensitic phase transition occurring at 912 deg. C at normal pressure. Elastic moduli of bcc iron vary as a function of temperature with c' = (C 11 - c 12 )/2 vanishing at the α-γ transition point. This has significant effects on the magnitude of both the elastic interactions between dislocations and other defects in the material and on the intrinsic structural stability of the dislocations and other defects themselves. To evaluate structural stability of defects at elevated temperatures we investigate elastic self-energies of dislocations in the continuum anisotropic elasticity approximation. We also develop atomistic models of dislocations and point defects based on a generalised form of the magnetic potential. By varying the magnetic part of the potential we are able to reproduce the experimentally observed variation of elastic moduli as a function of temperature, and assess relative stability of various types of defect structures. Our analysis shows that, in complete contrast to other straight dislocations, the elastic self-energy of straight 100 edge dislocations actually sharply decreases as we approach the α-γ transition, indicating that this surprising fact is a probable explanation of the frequent observation of the 100

Relaxation strain measurements in cellular dislocation structures

International Nuclear Information System (INIS)

Tsai, C.Y.; Quesnel, D.J.

1984-01-01

The conventional picture of what happens during a stress relaxation usually involves imagining the response of a single dislocation to a steadily decreasing stress. The velocity of this dislocation decreases with decreasing stress in such a way that we can measure the stress dependence of the dislocation velocity. Analysis of the data from a different viewpoint enables us to calculate the apparent activation volume for the motion of the dislocation under the assumption of thermally activated glie. Conventional thinking about stress relaxation, however, does not consider the eventual fate of this dislocation. If the stress relaxes to a low enough level, it is clear that the dislocation must stop. This is consistent with the idea that we can determine the stress dependence of the dislocation velocity from relaxation data only for those cases where the dislocation's velocity is allowed to approach zero asymptotically, in short, for those cases where the dislocation never stops. This conflict poses a dilemma for the experimentalist. In real crystals, however, obstacles impede the dislocation's progress so that those dislocations which are stopped at a given stress will probably never resume motion under the influence of the steadily declining stress present during relaxation. Thus one could envision stress relaxation as a process of exhaustion of mobile dislocations, rather than a process of decreasing dislocation velocity. Clearly both points of view have merit and in reality both mechanisms contribute to the phenomena

Primary traumatic patellar dislocation

Directory of Open Access Journals (Sweden)

Tsai Chun-Hao

2012-06-01

Full Text Available Abstract Acute traumatic patellar dislocation is a common injury in the active and young adult populations. MRI of the knee is recommended in all patients who present with acute patellar dislocation. Numerous operative and non-operative methods have been described to treat the injuries; however, the ideal management of the acute traumatic patellar dislocation in young adults is still in debate. This article is intended to review the studies to the subjects of epidemiology, initial examination and management.

Molecular dynamics simulation of dislocation intersections in aluminum

International Nuclear Information System (INIS)

Li, M.; Chu, W.Y.; Qian, C.F.; Gao, K.W.; Qiao, L.J.

2003-01-01

The molecular dynamics method is used to simulate dislocation intersection in aluminum containing 1.6x10 6 atoms using embedded atom method (EAM) potential. The results show that after intersection between two right-hand screw dislocations of opposite sign there are an extended jog corresponding to a row of 1/3 vacancies in the intersected dislocation, and a trail of vacancies behind the moving dislocation. After intersection between screw dislocations of same sign, there are an extended jog corresponding to a row of 1/3 interstitials in the intersected dislocation, and a trail of interstitials behind the moving dislocation. After intersection between screw and edge dislocations with different Burgers vector, there are a constriction corresponding to one 1/3 vacancy in the edge dislocation, and no point-defects behind the screw dislocation. When a moving screw dislocation intersects an edge dislocation with the same Burgers vector, the point of intersection will split into two constrictions corresponding to one 1/3 vacancy and 1/3 interstitial, respectively. The moving screw dislocation can pass the edge dislocation only after the two constrictions, which can move along the line of intersection of the two slip planes, meet and annihilate

Correlations between critical current density, jc, critical temperature, Tc, and structural quality of Y1B2Cu3O7-x thin superconducting films

International Nuclear Information System (INIS)

Chrzanowski, J.; Xing, W.B.; Atlan, D.

1994-01-01

Correlations between critical current density (j c ) critical temperature (T c ) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO 3 single crystals. Distinct maxima in j c as a function of the linewidths of the (00 ell) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j c indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical current density. T c increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j c and the density of edge dislocations N D was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N D ∼1-2 x 10 9 /cm 2

Energetics of dislocation nucleation under a nanoindenter

International Nuclear Information System (INIS)

Zhang Chuanli; Xu Guanshui

2005-01-01

We present an analysis of dislocation nucleation under an idealized nanoindenter based on the variational boundary integral formulation of the Peierls-Nabarro dislocation model. By solving the embryonic dislocation profiles, corresponding to the relative displacements between the two adjacent atomic layers along the slip plane, we have determined the critical conditions for athermal dislocation nucleation as well as the activation energies required to thermally activate embryonic dislocations from their stable to unstable saddle point configurations. The effect of the size of the indenter on the energetics of dislocation nucleation is quantitatively characterized. The result is compared with a simplified analysis based on the application of the Rice model for dislocation nucleation at a crack tip

Energetics of dislocation nucleation under a nanoindenter

Energy Technology Data Exchange (ETDEWEB)

Zhang Chuanli [College of Mechanical Engineering, Yangtze University, Jingzhou, Hubei 434023 (China); Department of Mechanical Engineering, University of California, Riverside, CA 92521 (United States); Xu Guanshui [Department of Mechanical Engineering, University of California, Riverside, CA 92521 (United States)]. E-mail: guanshui.xu@ucr.edu

2005-07-25

We present an analysis of dislocation nucleation under an idealized nanoindenter based on the variational boundary integral formulation of the Peierls-Nabarro dislocation model. By solving the embryonic dislocation profiles, corresponding to the relative displacements between the two adjacent atomic layers along the slip plane, we have determined the critical conditions for athermal dislocation nucleation as well as the activation energies required to thermally activate embryonic dislocations from their stable to unstable saddle point configurations. The effect of the size of the indenter on the energetics of dislocation nucleation is quantitatively characterized. The result is compared with a simplified analysis based on the application of the Rice model for dislocation nucleation at a crack tip.

Ipsilateral open anterior hip dislocation and open posterior elbow dislocation in an adult

Directory of Open Access Journals (Sweden)

Kumar Sunil

2014-02-01

Full Text Available 【Abstract】Open anterior dislocation of the hip is a very rare injury, especially in adults. It is a hyperabduction, external rotation and extension injury. Its combination with open posterior dislocation of the elbow has not been described in English language-based medical literature. Primary resuscitation, debridement, urgent reduction of dislocation, and adequate antibiotic support resulted in good clinical outcome in our patient. At 18 months follow-up, no signs of avascular necrosis of the femoral head or infection were observed.

Direct observations and analyses of dislocation substructures in the α phase of an α/β Ti-alloy formed by nanoindentation

International Nuclear Information System (INIS)

Viswanathan, G.B.; Lee, Eunha; Maher, Dennis M.; Banerjee, S.; Fraser, Hamish L.

2005-01-01

The hardness of α-titanium grains as a function of both indentation depth and orientation has been assessed using nanoindentation. Direct observations and analyses of the dislocation substructures have been achieved by cutting thin-foil membranes exactly through given indents with a dual-beam focused-ion-beam instrument and from diffraction-contrast experiments in a transmission electron microscope. It was found, as expected, that the hardness varied with the depth of indentation. Regarding the orientation dependence of hardness, the nature of the statistically stored dislocations as well as that of the geometrically necessary dislocations has been identified. Thus, the occurrence of the majority of the former dislocations can be predicted on the basis of Schmid's law, while noting the presence of minor densities of other dislocations required presumably because of the arbitrary shape change imposed by the nanoindenter. The geometrically necessary dislocations have been identified as the appropriate combinations of slip dislocations such that an overall displacement parallel to the direction of the indentation results

Medial peritalar fracture dislocation of the talar body

Directory of Open Access Journals (Sweden)

Jacob B. Stirton

2015-04-01

Full Text Available Peritalar fracture dislocations typically involve the talar neck and are classified according to Hawkins. To our knowledge, peritalar fracture dislocation involving the talar body has not been formally reported. In this article, we describe a case of peritalar fracture dislocation of the talar body. Keywords: Peritalar dislocation, Talus fracture, Talar body fracture dislocation, Medial subtalar dislocation

The movement of screw dislocations in tungsten

International Nuclear Information System (INIS)

Tian Xiaogeng; Woo Chungho

2004-01-01

Using Acland potential for tungsten, the movement of 1/2a screw dislocation under shear stress was investigated by molecular dynamics simulation. Equilibrated core structure was obtained by relaxation of screw dislocation with proper boundary conditions. We found that the equilibrium dislocation core has three-fold symmetry and spread out in three direction on {1 1 0} planes. The screw dislocation core could not keep the original shape when the shear stress applied. The dislocation could not move until the shear stress became large enough. The dislocation moved in zigzag when the shear stress neared the Peierls stress. When the shear stress became larger, the dislocation moved in zigzag at the beginning and than moved almost in straight line in [2-bar11] direction. The large shear stress applied, the long distance moved before the dislocation stilled in z-direction and the large velocity in y-direction

Simulations of dislocations dynamics at a mesoscopic scale: a study of plastic flow

International Nuclear Information System (INIS)

Devincre, Benoit

1993-01-01

This work is concerned with the numerical modelling of the plastic flow of crystalline materials. A new simulation technique is proposed to simulate dislocation dynamics in two and three dimensions, in an isotropic elastic continuum. The space and time scales used (≅10 -6 m and 10 -9 s) allow to take into account the elementary properties of dislocations, their short and long range interactions, their collective properties as well as the slip geometry. This original method is able to reproduce the inherent heterogeneity of plastic flow, the self-organization properties of the dislocation microstructures and the corresponding mechanical properties. In two dimensions, the simulations of cyclic deformation lead to the formation of periodic arrays of dipolar dislocation walls. These configurations are examined and discussed. A phenomenological model is proposed which predicts their characteristic wavelength as a function of the applied stress and dislocation density. A striking resemblance between the simulated behaviour and experimental data is emphasized. In three dimensions, the simulations are more realistic and can directly be compared with the experimental data. They are, however, restricted to small plastic strains, of the order of 10 -3 . The properties examined and discussed are concerned with the forest model, the internal stress, which is shown to contribute to about 20 pc of the flow stress and the mechanisms of strain hardening in relation with the models of Friedel-Saada and Kocks. The investigation of the dislocation microstructures focusses on two essential ingredients for the occurrence of self-organization, the internal stress and the intersections of non coplanar dislocations. These results suggest that, to understand the strain hardening properties as well as the formation of dislocation cells during multiple slip, one must take into account the influence of local internal stresses and cross-slip on the mechanisms of areal glide. (author) [fr

Traumatic hip dislocation: early MRI findings

International Nuclear Information System (INIS)

Laorr, A.; Greenspan, A.; Anderson, M.W.; Moehring, H.D.; McKinley, T.

1995-01-01

Objective of this study was to present the spectrum of early magnetic resonance imaging (MRI) findings following traumatic dislocation of the femoral head, and to identify any associated injuries. Prospective MRI of both hips was performed on 18 patients within 5 weeks of a traumatic femoral head dislocation. The interval between the time of injury and the imaging studies ranged from 2 to 35 days. Posterior dislocation was present in 14 patients and anterior dislocation in 4 patients. In the majority of cases, we performed axial T1, coronal T1, and coronal T2 * (MPGR) sequences. MRI can effectively identify and quantify the muscle injury and joint effusion that invariably accompany traumatic hip dislocations. It is also useful for demonstrating trabecular bone contusion (trabecular injury) and iliofemoral ligament injury, which occur commonly with acute hip dislocation. (orig./VHE)

Local Variability of the Peierls Barrier of Screw Dislocations in Ta-10W.

Energy Technology Data Exchange (ETDEWEB)

Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-10-01

It is well know that the addition of substitutional elements changes the mechanical behavior of metals, a effect referred to solid solution hardening. For body-centered-cubic (BCC) metals, screw dislocation play a key role in the mechanical properties. Here the detailed modification of the Peierls barrier for screw dislocation motion in Ta with W substitutional atoms is computing using density functional theory (DFT). A reduced order model (ROM) of the influence of W substitution on the Peierls barrier is developed. The mean field change in the Peierls barrier for a Ta10W alloy is determined and shown to be larger than anticipated based on simple elasticity considerations. The ROM could be used in future calculations to determine the local variability of the Peierls barrier and the resultant influence on the motion of screw dislocation in this alloy.

Molecular dynamics simulation of mode-I-crack propagation and dislocation generation processes in α-Fe

International Nuclear Information System (INIS)

Wang Jianwei; Lu Guocai; Shang Xinchun

2011-01-01

The process of I-mode crack propagations in α-Fe for uniaxial tension experiments are simulated by molecular dynamics (MD) methods. The formation process of dislocation and fracture mechanisms in the crack growing under various temperatures were studied. The results show that the crack propagation is a process of successive emission of dislocation. The dislocation-free zone and the stacking faults were initially formed at crack tip. When the stress K I increased into 0. 566 MPam 1/2 , one layer of atoms near crack tip would be separated into two layers which produced a dislocation. The first dislocation was emitted when stress K I reached 0.669 MPam 1/2 . With the temperature increasing, the critical stress intensity factor decreased gradually and the dislocation emission correspondingly became faster as well. (authors)

HRTEM studies of dislocations in cubic BN

International Nuclear Information System (INIS)

Nistor, L.C.; Tendeloo, G. van; Dinca, G.

2004-01-01

The atomic structure of dislocations in cubic boron nitride has been investigated by high resolution transmission electron microscopy. Most of the perfect dislocations, screw and 60 edge, are dissociated. A 60 dislocation which was undissociated has been analysed. Computer simulation is performed in an attempt to characterise the core structure. Twinning dislocations and dislocations resulting from the intersection of stacking faults are also revealed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

HRTEM studies of dislocations in cubic BN

Energy Technology Data Exchange (ETDEWEB)

Nistor, L.C. [National Institute for Materials Physics, P.O. Box MG-7 Magurele, 077125 Bucharest (Romania); Tendeloo, G. van [University of Antwerp, EMAT, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Dinca, G. [Dacia Synthetic Diamond Factory, Timisoara av. 5, P.O. Box 58-52, 077350 Bucharest (Romania)

2004-09-01

The atomic structure of dislocations in cubic boron nitride has been investigated by high resolution transmission electron microscopy. Most of the perfect dislocations, screw and 60 edge, are dissociated. A 60 dislocation which was undissociated has been analysed. Computer simulation is performed in an attempt to characterise the core structure. Twinning dislocations and dislocations resulting from the intersection of stacking faults are also revealed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Rules for Forest Interactions between Dislocations

International Nuclear Information System (INIS)

Wickham, L. K.; Schwarz, K. W.; Stoelken, J. S.

1999-01-01

The dynamical interactions of dislocations existing on intersecting glide planes have been investigated using numerical simulations based on isotropic linear elastic theory. It is found that such dislocations either repel, attract and form growing junctions, or attract and form bound crossed states. Which of these occurs can be predicted from a surprisingly simple analysis of the initial configurations. The outcome is determined primarily by the angles which the dislocations initially make with the glide-plane intersection edge, and is largely independent of the initial distance between the dislocations, their initial curvature, or ambient applied stresses. The results provide a rule for dealing with forest interactions within the context of large multiple-dislocation computations. (c) 1999 The American Physical Society

Evolution of dislocation structures following a change in loading conditions studied by in situ high resolution reciprocal space mapping

DEFF Research Database (Denmark)

Wejdemann, Christian

or to a strain of 7% at a temperature of -196 ○C, and the samples were characterized by electron microscopy and mechanical tests. Transmission electron microscopy showed that the pre-deformation produced a characteristic dislocation cell structure consisting of regions with relatively high dislocation density...... the pre-deformation axis. In the X-ray diffraction experiments a technique was employed with which it is possible to obtain high-resolution reciprocal space maps from individual bulk grains. The high-resolution reciprocal space maps contain features related to the dislocation structure in the grains......: A spread-out ‘cloud’ of low intensity caused by diffraction from the dislocation walls and a number of sharp peaks of high intensity caused by diffraction from the individual subgrains. By acquiring reciprocal space maps at a number of different strain levels the evolution of the dislocation structures can...

Dislocation following total knee arthroplasty: A report of six cases

Directory of Open Access Journals (Sweden)

Villanueva Manuel

2010-01-01

Full Text Available Background: Dislocation following total knee arthroplasty (TKA is the worst form of instability. The incidence is from 0.15 to 0.5%. We report six cases of TKA dislocation and analyze the patterns of dislocation and the factors related to each of them. Materials and Methods: Six patients with dislocation of knee following TKA are reported. The causes for the dislocations were an imbalance of the flexion gap (n=4, an inadequate selection of implants (n=1, malrotation of components (n=1 leading to incompetence of the extensor mechanism, or rupture of the medial collateral ligament (MCC. The patients presented complained of pain, giving way episodes, joint effusion and difficulty in climbing stairs. Five patients suffered posterior dislocation while one anterior dislocation. An urgent closed reduction of dislocation was performed under general anaesthesia in all patients. All patients were operated for residual instability by revision arthroplasty after a period of conservative treatment. Results: One patient had deep infection and knee was arthrodesed. Two patients have a minimal residual lag for active extension, including a patient with a previous patellectomy. Result was considered excellent or good in four cases and fair in one, without residual instability. Five out of six patients in our series had a cruciate retaining (CR TKA designs: four were revised to a posterior stabilized (PS TKA and one to a rotating hinge design because of the presence of a ruptured MCL. Conclusion: Further episodes of dislocation or instability will be prevented by identifying and treating major causes of instability. The increase in the level of constraint and correction of previous technical mistakes is mandatory.

Anterior Hip Dislocation in a Football Player: A Case Report

Directory of Open Access Journals (Sweden)

Alexander Schuh

2009-01-01

Full Text Available Hip dislocations during sporting activities represent only 2%–5% of all hip dislocations. Most hip dislocations in sports can be categorised as “less complicated traumatic hip dislocations” by the Stewart-Milford classification due to the fact that minimal force is involved. The incidence of avascular necrosis of the femoral head greatly increases if the time to reduction is more than six hours. We report the case of a 38-year-old football player who suffered hip dislocation while kicking the ball with the medial aspect of the right foot in an external rotated manner of the right hip. Closed reduction was performed within 2 hours; postoperative follow-up was uneventful. Six months later the patient is out of any complaints; there is no sign of AVN of the femoral head.

Plastic deformation of uranium dioxide: observation of the sub-structures of dislocations

International Nuclear Information System (INIS)

Alamo, A.; Lefebvre, J.M.; Soullard, J.

1978-01-01

Single crystals of uranium dioxide were deformed in compression at imposed strain rates in the temperature range of 700 0 C to 1400 0 C. The crystals were oriented to promote slip over one or two slip systems of the family [100] and also on the [110] system. Thin films of the deformed specimens were examined by transmission electron microscopy. When [100] single glide system operates, the dislocation substructure consist of numerous dipoles, their edge components lying along directions. For the [100] double glide system the grain boundaries and dislocation hexagonal network are observed, the complexity of which increases with the nominal strain. Dislocation arrangments consisting of extensive cellular networks of tangling dislocations and hexagonal netting were detected for [110] system. The auxillary role of [111] planes on the dislocation cross slip from [100] and [110] system was demonstrated. Weak beam images suggest that dissociation of dislocations can occur. (Auth.)

Effects of dislocations on electron channeling

International Nuclear Information System (INIS)

George, Juby; Pathak, A P

2009-01-01

The phenomenon of electron channeling in a crystal affected by dislocations is considered. Earlier we had considered the quantum aspects of the positron channeling in a crystal bent by dislocations where the effects of longitudinal motion of the particle were also considered along with the transverse motion. In this paper, the effective potential for the electron case is found for the two regions of dislocation-affected channel. There is considerable shift in the potential minima due to dislocations. The frequency and the corresponding spectrum of the channeling radiation due to electrons channeling through the perfect channel and the two regions of dislocation-affected channels are calculated. The spectral distribution of radiation intensity changes with the parameters of dislocation. The continuity of wavefunctions and their derivatives is used at the three boundaries and the reflection and transmission coefficients are found using these boundary conditions in the same way as in the positron case.

Energy flow around a moving dislocation

International Nuclear Information System (INIS)

Koizumi, H; Kirchner, H O K

2009-01-01

A dislocation moving in a lattice emits lattice waves. We study the energy flow accompanying the lattice wave emission in a molecular dynamics situation. About two thirds of the static free energy are emitted as lattice waves from the moving dislocation. Work done by the region around the dislocation helps to initiate the motion from the unstable equilibrium state under a small applied stress, or to compensate the energy emitted as lattice waves when the dislocation makes a long distance motion under a larger stress.

Atomistic simulations of dislocation processes in copper

DEFF Research Database (Denmark)

Vegge, T.; Jacobsen, K.W.

2002-01-01

We discuss atomistic simulations of dislocation processes in copper based on effective medium theory interatomic potentials. Results on screw dislocation structures and processes are reviewed with particular focus on point defect mobilities and processes involving cross slip. For example......, the stability of screw dislocation dipoles is discussed. We show that the presence of jogs will strongly influence cross slip barriers and dipole stability. We furthermore present some new results on jogged edge dislocations and edge dislocation dipoles. The jogs are found to be extended, and simulations...

Atomic-scale structure of dislocations revealed by scanning tunneling microscopy and molecular dynamics

DEFF Research Database (Denmark)

Christiansen, Jesper; Morgenstern, K.; Schiøtz, Jakob

2002-01-01

The intersection between dislocations and a Ag(111) surface has been studied using an interplay of scanning tunneling microscopy (STM) and molecular dynamics. Whereas the STM provides atomically resolved information about the surface structure and Burgers vectors of the dislocations, the simulati......The intersection between dislocations and a Ag(111) surface has been studied using an interplay of scanning tunneling microscopy (STM) and molecular dynamics. Whereas the STM provides atomically resolved information about the surface structure and Burgers vectors of the dislocations......, the simulations can be used to determine dislocation structure and orientation in the near-surface region. In a similar way, the subsurface structure of other extended defects can be studied. The simulations show dislocations to reorient the partials in the surface region leading to an increased splitting width...

Influence of temperature upon dislocation mobility and elastic limit of single crystal HgI2

International Nuclear Information System (INIS)

Milstein, F.; Farber, B.; Kim, K.; van den Berg, L.; Schnepple, W.

1982-01-01

The practical importance of studying mechanical properties and dislocation structure of HgI 2 is reviewed briefly. Specifically, the performance of single crystal HgI 2 radiation detectors is evidently sensitive to crystalline imperfections; the dislocation structure, in turn, can be altered during detector fabrication, depending upon the mechanical properties of the crystal and the stresses to which the crystal is subjected. The influence of temperature upon dislocation mobility and plasticity in vapor-grown crystals of mercuric iodide is examined. Dislocation mobiity is determined by measuring the lengths of the longest arms of dislocation etch pit rosettes on (001) surfaces following microhardness indentation and chemical etch. Measurements were made in the range from room temperature to the phase transition temperature of 127 0 C. Dislocation mobility was found to be an increasing function of temperature, with the effect accelerating as the phase transition is approached. Increasing temperature was also found to lower the critical resolved shear stress for plastic deformation on slip on (001) planes. In these contexts, the vapor-grown crystals are clearly softer at their elevated growth temperatures. The results are discussed in terms of a dislocation model involving soft and hard glide dislocations

Athermal mechanisms of size-dependent crystal flow gleaned from three-dimensional discrete dislocation simulations

International Nuclear Information System (INIS)

Rao, S.I.; Dimiduk, D.M.; Parthasarathy, T.A.; Uchic, M.D.; Tang, M.; Woodward, C.

2008-01-01

Recent experimental studies have revealed that micrometer-scale face-centered cubic (fcc) crystals show strong strengthening effects, even at high initial dislocation densities. We use large-scale three-dimensional discrete dislocation simulations (DDS) to explicitly model the deformation behavior of fcc Ni microcrystals in the size range of 0.5-20 μm. This study shows that two size-sensitive athermal hardening processes, beyond forest hardening, are sufficient to develop the dimensional scaling of the flow stress, stochastic stress variation, flow intermittency and high initial strain-hardening rates, similar to experimental observations for various materials. One mechanism, source-truncation hardening, is especially potent in micrometer-scale volumes. A second mechanism, termed exhaustion hardening, results from a breakdown of the mean-field conditions for forest hardening in small volumes, thus biasing the statistics of ordinary dislocation processes

Effects of pre-creep on the dislocations of 316LN Austenite stainless steel

Science.gov (United States)

Pei, Hai-xiang; Hui, Jun; Hua, Hou; Feng, Zai-xin; Xu, Xiao-long

2017-09-01

The 316LN Austenite stainless steels (316LNASS) were pre-creep treated, the evolution of microstructure were investigated. The samples were pre-creep at 593 K and from 500 to 2000 h at 873 K with a stress in the range of 20 to 150 MPa, Then the evolution of microstructure and precipitation were investigated by optical microscope (OM), and transmission electron microscope (TEM). The results show that the crystal surface slipping resulted in dislocations and original dislocations decomposition during the pre-creep process, and generate quadrilateral or hexagonal dislocation network was obviously. The sub-grain boundary gradually became narrow with the increasing of pre-creep treatment time and temperature. When the pre-creep temperature was 593 K and 873 K, dislocation network gradually disappear with the increasing of pre-creep time and load. When the pre-creep temperature was 873 K under 120 MPa, and the treatment time was 2000 h, the hexagonal dislocation network (HDN) would completely disappeared. When the pre-creep temperature was 593 K under 20 MPa, and the treatment time was 500 h, the quadrilateral dislocation network (QDN) would completely disappeared.

Sink efficiency calculation of dislocations in irradiated materials by phase-field modelling

International Nuclear Information System (INIS)

Rouchette, Adrien

2015-01-01

The aim of this work is to develop a modelling technique for diffusion of crystallographic migrating defects in irradiated metals and absorption by sinks to better predict the microstructural evolution in those materials.The phase field technique is well suited for this problem, since it naturally takes into account the elastic effects of dislocations on point defect diffusion in the most complex cases. The phase field model presented in this work has been adapted to simulate the generation of defects by irradiation and their absorption by the dislocation cores by means of a new order parameter associated to the sink morphology. The method has first been validated in different reference cases by comparing the sink strengths obtained numerically with analytical solutions available in the literature. Then, the method has been applied to dislocations with different orientations in zirconium, taking into account the anisotropic properties of the crystal and point defects, obtained by state-of-the-art atomic calculations.The results show that the shape anisotropy of the point defects promotes the vacancy absorption by basal loops, which is consistent with the experimentally observed zirconium growth under irradiation. Finally, the rigorous investigation of the dislocation loop case proves that phase field simulations give more accurate results than analytical solutions in realistic loop density ranges. (author)

Contribution to the study of screw dislocations; Contribution a l'etude des dislocations helicoidales

Energy Technology Data Exchange (ETDEWEB)

Grilhe, J [Commissariat a l' Energie Atomique, Fontenay aux Roses (France). Centre d' Etudes Nucleaires

1965-03-01

The aim of this work is to study the germination, growth and properties of screw dislocations. In the introduction (first chapter), we describe briefly the main experimental results obtained by various authors (observations of screws by Amelinckx and Bontinck in ionic crystals, by Dash in silicon crystals and by Thomas and Whelan in aluminium based alloys). We then make a few considerations concerning characteristic geometry of screws and the various methods used for calculating the energy of a dislocation. In the second chapter we study the problems involving only slip of the screw around its cylinder. We calculate the equilibrium step as a function of the forces acting on the extremities. We determine the critical stress required to disrupt the screw and study the interactions between the screw and other dislocations of the lattice. In the third chapter we consider the problem of the stability when the dislocation can climb by absorption or emission of vacancies. We study separately the stability of the size which only involves volume diffusion and the stability of the shape which depends only on the rearrangement of the vacancies along the dislocation. In chapter four we put forward a germination model for the screws: since the vacancies are not absorbed by the screw dislocations, they form clusters which take up a spiral form. The formation of these spirals is studied from the geometrical point of view in face-centered cubic systems. In chapter five we make use of the results obtained in chapters two and three for studying the growth of the spirals. (author) [French] Le but de ce travail est d'etudier la germination, la croissance et les proprietes des dislocations helico ales. Dans l'introduction (premier chapitre), nous exposons brievement les principaux resultats experimentaux obtenus par differents auteurs (observations d'helice par Amelinckx et Bontinck dans les cristaux ioniques, par Dash dans des cristaux de silicium et par Thomas et Whelan dans des

Increasing the radiation resistance of single-crystal silicon epitaxial layers

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Kurmashev Sh. D.

2014-12-01

Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

Atomistic simulation of hydrogen dynamics near dislocations in vanadium hydrides

International Nuclear Information System (INIS)

Ogawa, Hiroshi

2015-01-01

Highlights: • Hydrogen–dislocation interaction was simulated by molecular dynamics method. • Different distribution of H atoms were observed at edge and screw dislocation. • Planner distribution of hydrogen may be caused by partialized edge dislocation. • Hydrogen diffusivity was reduced in both edge and screw dislocation models. • Pipe diffusion was observed for edge dislocation but not for screw dislocation. - Abstract: Kinetics of interstitial hydrogen atoms near dislocation cores were analyzed by atomistic simulation. Classical molecular dynamics method was applied to model structures of edge and screw dislocations in α-phase vanadium hydride. Simulation showed that hydrogen atoms aggregate near dislocation cores. The spatial distribution of hydrogen has a planner shape at edge dislocation due to dislocation partialization, and a cylindrical shape at screw dislocation. Simulated self-diffusion coefficients of hydrogen atoms in dislocation models were a half- to one-order lower than that of dislocation-free model. Arrhenius plot of self-diffusivity showed slightly different activation energies for edge and screw dislocations. Directional dependency of hydrogen diffusion near dislocation showed high and low diffusivity along edge and screw dislocation lines, respectively, hence so called ‘pipe diffusion’ possibly occur at edge dislocation but does not at screw dislocation

Atraumatic Anterior Dislocation of the Hip Joint

Directory of Open Access Journals (Sweden)

Tadahiko Ohtsuru

2015-01-01

Full Text Available Dislocation of the hip joint in adults is usually caused by high-energy trauma such as road traffic accidents or falls from heights. Posterior dislocation is observed in most cases. However, atraumatic anterior dislocation of the hip joint is extremely rare. We present a case of atraumatic anterior dislocation of the hip joint that was induced by an activity of daily living. The possible causes of this dislocation were anterior capsule insufficiency due to developmental dysplasia of the hip, posterior pelvic tilt following thoracolumbar kyphosis due to vertebral fracture, and acetabular anterior coverage changes by postural factor. Acetabular anterior coverage changes in the sagittal plane were measured using a tomosynthesis imaging system. This system was useful for elucidation of the dislocation mechanism in the present case.

Leaf-like dislocation substructures and the decrease of martensitic start temperatures: A new explanation for functional fatigue during thermally induced martensitic transformations in coarse-grained Ni-rich Ti–Ni shape memory alloys

International Nuclear Information System (INIS)

Zhang Jian; Somsen, Christoph; Simon, Tobias; Ding Xiangdong; Hou Sen; Ren Shuai; Ren Xiaobing; Eggeler, Gunther

2012-01-01

During repeatedly imposed thermally induced martensitic transformations in Ti–Ni shape memory alloys, the martensite start temperature M s decreases. This has been rationalized on the basis of a scenario where an increasing dislocation density makes it more and more difficult for martensite to form. However, it is not clear why dislocations which form because they accommodate the growth of martensite during the first cooling cycle should act as obstacles during subsequent transformation cycles. In the present work we use diffraction contrast transmission electron microscopy to monitor the formation of unique leaf-like dislocation substructures which form as the martensite start temperature decreases during thermal cycling. We interpret our microstructural results on the basis of a microstructural scenario where dislocations play different roles with respect to the propagation of a big martensite needle in one transformation cycle and the nucleation and growth of new martensite needles in the following cycles. As a consequence, chestnut-leaf-like dislocation arrays spread out in different crystallographic directions.

Subgrain and dislocation structure changes in hot-deformed high-temperature Fe-Ni austenitic alloy

Energy Technology Data Exchange (ETDEWEB)

Ducki, K.J.; Rodak, K.; Hetmanczyk, M.; Kuc, D

2003-08-28

The influence of plastic deformation on the substructure of a high-temperature austenitic Fe-Ni alloy has been presented. Hot-torsion tests were executed at constant strain rates of 0.1 and 1.0 s{sup -1}, at testing temperatures in the range 900-1150 deg. C. The examination of the microstructure was carried out, using transmission electron microscopy. Direct measurements on the micrographs allowed the calculation of structural parameters: the average subgrain area, and the mean dislocation density. A detailed investigation has shown that the microstructure is inhomogeneous, consisting of dense dislocation walls, subgrains and recrystallized regions.

Subgrain and dislocation structure changes in hot-deformed high-temperature Fe-Ni austenitic alloy

International Nuclear Information System (INIS)

Ducki, K.J.; Rodak, K.; Hetmanczyk, M.; Kuc, D.

2003-01-01

The influence of plastic deformation on the substructure of a high-temperature austenitic Fe-Ni alloy has been presented. Hot-torsion tests were executed at constant strain rates of 0.1 and 1.0 s -1 , at testing temperatures in the range 900-1150 deg. C. The examination of the microstructure was carried out, using transmission electron microscopy. Direct measurements on the micrographs allowed the calculation of structural parameters: the average subgrain area, and the mean dislocation density. A detailed investigation has shown that the microstructure is inhomogeneous, consisting of dense dislocation walls, subgrains and recrystallized regions

Internal stresses, dislocation mobility and ductility

Science.gov (United States)

Saada, G.

1991-06-01

The description of plastic deformation must take into account individual mechanisms and heterogeneity of plastic strain. Influence of dislocation interaction with forest dislocations and of cross slip are connected with the organization of dipole walls. The latter are described and their development is explained as a consequence of edge effects. Applications are discussed. La description de la déformation plastique doit prendre en compte les interactions individuelles des dislocations et l'hétérogénéité à grande échelle de la déformation plastique. Les interactions des dislocations mobiles avec la forêt de dislocations, le glissement dévié, ont pour effet la création de parois dipolaires. Celles-ci sont décrites et leur développement est appliqué à partir des effets de bord.

Effect of ion irradiation-produced defects on the mobility of dislocations in 304 stainless steel

International Nuclear Information System (INIS)

Briceno, M.; Fenske, J.; Dadfarnia, M.; Sofronis, P.; Robertson, I.M.

2011-01-01

The impact of heavy-ion produced defects on the mobility of dislocations, dislocation sources and newly generated dislocations in 304 stainless steel are discovered by performing irradiation and deformation experiments in real time in the transmission electron microscope. Dislocations mobile prior to the irradiation are effectively locked in position by the irradiation, but the irradiation has no discernible impact on the ability of a source to generate dislocations. The motion and mobility of a dislocation is altered by the irradiation. It becomes irregular and jerky and the mobility increases slowly with time as the radiation-produced defects are annihilated locally. Channels created by dislocations ejected from grain boundary dislocation sources were found to have a natural width, as the emission sites within the boundary were spaced close together. Finally, the distribution of dislocations, basically, an inverse dislocation pile-up, within a cleared channel suggests a new mechanism for generating high local levels of stress at grain boundaries. The impact of these observations on the mechanical properties of irradiated materials is discussed briefly.

Effect of ion irradiation-produced defects on the mobility of dislocations in 304 stainless steel

Energy Technology Data Exchange (ETDEWEB)

Briceno, M.; Fenske, J. [Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801 (United States); Dadfarnia, M.; Sofronis, P. [Department of Mechanical Science and Engineering, University of Illinois, Urbana, IL 61801 (United States); Robertson, I.M., E-mail: ian.robertson@tcd.ie [Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801 (United States)

2011-02-01

The impact of heavy-ion produced defects on the mobility of dislocations, dislocation sources and newly generated dislocations in 304 stainless steel are discovered by performing irradiation and deformation experiments in real time in the transmission electron microscope. Dislocations mobile prior to the irradiation are effectively locked in position by the irradiation, but the irradiation has no discernible impact on the ability of a source to generate dislocations. The motion and mobility of a dislocation is altered by the irradiation. It becomes irregular and jerky and the mobility increases slowly with time as the radiation-produced defects are annihilated locally. Channels created by dislocations ejected from grain boundary dislocation sources were found to have a natural width, as the emission sites within the boundary were spaced close together. Finally, the distribution of dislocations, basically, an inverse dislocation pile-up, within a cleared channel suggests a new mechanism for generating high local levels of stress at grain boundaries. The impact of these observations on the mechanical properties of irradiated materials is discussed briefly.

Measurement of probability distributions for internal stresses in dislocated crystals

Energy Technology Data Exchange (ETDEWEB)

Wilkinson, Angus J.; Tarleton, Edmund; Vilalta-Clemente, Arantxa; Collins, David M. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Jiang, Jun; Britton, T. Benjamin [Department of Materials, Imperial College London, Royal School of Mines, Exhibition Road, London SW7 2AZ (United Kingdom)

2014-11-03

Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called “restricted second moment of the probability distribution” can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.

Ultrasonic Study of Dislocation Dynamics in Lithium -

Science.gov (United States)

Han, Myeong-Deok

1987-09-01

Experimental studies of dislocation dynamics in LiF single crystals, using ultrasonic techniques combined with dynamic loading, were performed to investigate the time evolution of the plastic deformation process under a short stress pulse at room temperature, and the temperature dependence of the dislocation damping mechanism in the temperature range 25 - 300(DEGREES)K. From the former, the time dependence of the ultrasonic attenuation was understood as resulting from dislocation multiplication followed by the evolution of mobile dislocations to immobile ones under large stress. From the latter, the temperature dependence of the ultrasonic attenuation was interpreted as due to the motion of the dislocation loops overcoming the periodic Peierls potential barrier in a manner analogous to the motion of a thermalized sine-Gordon chain under a small stress. The Peierls stress obtained from the experimental results by application of Seeger's relaxation model with exponential dislocation length distribution was 4.26MPa, which is consistent with the lowest stress for the linear relation between the dislocation velocity and stress observed by Flinn and Tinder.

An experimental study of dislocation loop nucleation

International Nuclear Information System (INIS)

Bounaud, J.Y.; Leteurtre, J.

1975-01-01

The nucleation of dislocation loops is experimentally studied by observing the demixion of the Burgers vectors of dislocation loops nucleated in copper whiskers irradiated in flexion by fission fragments at room temperature. The demixion of Burgers vectors is observed by the dimensional effects of dislocation loops: after irradiation, the applied stress is removed; the whisker shows a residual strain that is due to loops because, after an annealing treatment to evaporate dislocation loops, each whisker recovers its initial straight shape. Everywhere along the whisker, the radius of curvature is measured and plotted vs the max. applied stress. Estimations of the interstitial and vacancy dislocation loop nuclei are derived [fr

Representation of dislocation cores using Nye tensor distributions

International Nuclear Information System (INIS)

Hartley, Craig S.; Mishin, Y.

2005-01-01

This paper demonstrates how the cores of atomistically simulated dislocations in Cu and Al can be represented by a distribution of infinitesimal dislocations described by appropriate components of the Nye tensor. Components calculated from atomic positions in the dislocated crystal are displayed as contour plots on the plane normal to the dislocation line. The method provides an accurate and instructive means for characterizing dislocation core structures and calculating the total Burgers vector

Structure of the Dislocation in Sapphire

DEFF Research Database (Denmark)

Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

1976-01-01

Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

Dislocation of jaws

International Nuclear Information System (INIS)

Katzberg, R.W.; Hayakawa, K.; Anderson, Q.N.; Manzione, J.V.; Helms, C.A.; Tallents, R.

1984-01-01

Pluri-directional tomographic and arthrotomographic findings are described in six patients with dislocation of the jaw severe enough to require medical assistance. A grooved defect along the posterior aspect of the condylar head was noted in two of the six patients. The arthrotomographic findings that were obtained in one patient that was dislocated at the time of the arthrogram did not suggest a meniscocondyle incoordination as a mechanism. However, arthrotomographic findings in the six reported cases suggest that significant intra-articular soft tissue damage may result. (orig.)

Microstructure, quantification and control of dislocations in bast-type plant fibres

DEFF Research Database (Denmark)

Madsen, Bo; Lester, Catherine L.; Mortensen, Ulrich Andreas

2016-01-01

Bast-type plant fibres are increasingly being used for structural composite applications where high quality fibres with good mechanical properties are required. A central aspect for this application is the existence of dislocations in the cell wall of plant fibres, i.e. regions of misaligned...... cellulose microfibrils, which are believed to form weak points leading to reduced mechanical properties. In the present study, microstructural observations of dislocations are made using high-magnification scanning electron microscopy. An experimental protocol using polarized optical microscopy and image...... that this leads to a reduction in the content of dislocations. This is indicating that dislocations in the cell wall of plant fibres are changeable structures. Preliminary work is presented where plant fibres are exposed to physical treatments involving moisture and mechanical straining in order to change...

[Intra-prosthetic dislocation of the Bousquet dual mobility socket].

Science.gov (United States)

Lecuire, F; Benareau, I; Rubini, J; Basso, M

2004-05-01

The Bousquet system is a dual mobility head-polyethylene polyethylene-metal cup socket. The polyethylene insert retaining the femoral head moves in the noncemented metal cup, increasing both mobility and stability. Between 1989 and 1997, seven cases of intra-prosthetic dislocation (six patients) were observed. The femoral head escaped from the polyethylene insert due to wear. On the average, this complication occurred ten Years after implantation. Risk of dislocation was high in six of the seven hips. All patients had a large sized stem screwed into the femoral neck. There was a characteristic radiological aspect with loss of the concentric head metal cup configuration. The head was applied against the upper wall of the metal cup. Surgical replacement was undertaken early in six patients by simply changing the insert without modifying the other stable components. Outcome remained good at three to eight Years. One patient underwent late surgery. The insert and the cup were replaced with a classical implant. Functional outcome was good but recurrent dislocation occurred. At mid-term, intra-prosthetic dislocation of dual mobility sockets appears to be exceptional. Dislocation results from polyethylene wear leading to failure of the insert to retain the prosthetic head. Wear is favored by direct phenomena (direct contact between neck and insert which can occur early if there is a small difference in the head and neck diameters) or indirect phenomena (factors limiting polyethylene metal-cup mobility). Surgical treatment is necessary. If undertaken early, replacement with a modular head and insert can be sufficient if the prosthesis has not loosened but the metal cup may have to be replaced in the event of metal-metal contact between the head and the cup. Prosthesis loosening, wear of the metal cup, or an identified cause of dislocation imply replacing the failing implants. Implantation of the dual mobility system is particularly interesting for patients with a high risk

Ab initio modeling of interactions between screw dislocations and interstitial solutes in body-centered cubic transition metals

International Nuclear Information System (INIS)

Luthi, Berengere

2017-01-01

In order to improve our understanding of alloy plasticity, it is important to describe at the atomic scale the dislocation-solute interactions and their effect on the dislocation mobility. This work focuses on the body-centered cubic (BCC) transition metals in presence of interstitial solute atoms, in particular the Fe-C system. Using Density Functional Theory (DFT) calculations, the core structure of the screw dislocation of Burgers vector b=1/2<111> was investigated in iron in presence of boron, carbon, nitrogen and oxygen solute atoms, and in BCC metals from group 5 (V, Nb, Ta) and 6 (Mo, W) in presence of carbon solutes. A core reconstruction is evidenced in iron and group 6 metals, along with a strong attractive dislocation-solute interaction energy: the dislocation goes from easy to hard configuration where the solute atoms are at the center of trigonal prisms along the dislocation line. A different behavior is observed in group 5 metals, for which the most stable configuration for the carbon atom is an octahedral site in the vicinity of the dislocation, without any core reconstruction. This group tendency is linked to the structure of mono-carbides. Consequences of the strongly attractive dislocation-solute interactions in Fe(C) were then investigated. First the equilibrium segregation close to the dislocation core was studied using a mean-field model and Monte Carlo simulations. Over a wide temperature range, from 200 to 700 K, a strong segregation is predicted with every other prismatic site occupied by a carbon atom. Then, the mobility of the dislocation in presence of carbon atoms was investigated by modeling the double-kink mechanism with DFT, in relation with experimental data obtained with transmission electron microscopy. The activation energy obtained for this atomic scale mechanism is in good agreement with experimental values for the dynamic strain aging. (author) [fr

Dislocation and void segregation in copper during neutron irradiation

DEFF Research Database (Denmark)

Singh, Bachu Narain; Leffers, Torben; Horsewell, Andy

1986-01-01

); the irradiation experiments were carried out at 250 degree C. The irradiated specimens were examined by transmission electron microscopy. At both doses, the irradiation-induced structure was found to be highly segregated; the dislocation loops and segments were present in the form of irregular walls and the voids...... density, the void swelling rate was very high (approximately 2. 5% per dpa). The implications of the segregated distribution of sinks for void formation and growth are briefly discussed....

Identification of deep levels in GaN associated with dislocations

International Nuclear Information System (INIS)

Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

2004-01-01

To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

Molecular dynamics study on the evolution of interfacial dislocation network and mechanical properties of Ni-based single crystal superalloys

Science.gov (United States)

Li, Nan-Lin; Wu, Wen-Ping; Nie, Kai

2018-05-01

The evolution of misfit dislocation network at γ /γ‧ phase interface and tensile mechanical properties of Ni-based single crystal superalloys at various temperatures and strain rates are studied by using molecular dynamics (MD) simulations. From the simulations, it is found that with the increase of loading, the dislocation network effectively inhibits dislocations emitted in the γ matrix cutting into the γ‧ phase and absorbs the matrix dislocations to strengthen itself which increases the stability of structure. Under the influence of the temperature, the initial mosaic structure of dislocation network gradually becomes irregular, and the initial misfit stress and the elastic modulus slowly decline as temperature increasing. On the other hand, with the increase of the strain rate, it almost has no effect on the elastic modulus and the way of evolution of dislocation network, but contributes to the increases of the yield stress and tensile strength. Moreover, tension-compression asymmetry of Ni-based single crystal superalloys is also presented based on MD simulations.

Smectic meniscus and dislocations

International Nuclear Information System (INIS)

Geminard, J.C.; Oswald, P.; Holyst, R.

1998-01-01

In ordinary liquids the size of a meniscus and its shape is set by a competition between surface tension and gravity. The thermodynamical process of its creation can be reversible. On the contrary, in smectic liquid crystals the formation of the meniscus is always an irreversible thermodynamic process since it involves the creation of dislocations (therefore it involves friction). Also the meniscus is usually small in experiments with smectics in comparison to the capillary length and therefore the gravity does not play any role in determining the meniscus shape. Here we discuss the relation between dislocations and meniscus in smectics. The theoretical predictions are supported by a recent experiment performed on freely suspended films of smectic liquid crystals. In this experiment the measurement of the meniscus radius of curvature gives the pressure difference, Δp, according to the Laplace law. From the measurements of the growth dynamics of a dislocation loop (governed by Δp) we find the line tension (∼8 x 10 -8 dyn) and the mobility of an elementary edge dislocation (∼4 x 10 - 7 cm 2 s/g). (author)

Dynamic aspects of dislocation motion: atomistic simulations

International Nuclear Information System (INIS)

Bitzek, Erik; Gumbsch, Peter

2005-01-01

Atomistic simulations of accelerating edge and screw dislocations were carried out to study the dynamics of dislocations in a face centered cubic metal. Using two different embedded atom potentials for nickel and a simple slab geometry, the Peierls stress, the effective mass, the line tension and the drag coefficient were determined. A dislocation intersecting an array of voids is used to study dynamic effects in dislocation-obstacle interactions. A pronounced effect caused by inertial overshooting is found. A dynamic line tension model is developed which reproduces the simulation results. The model can be used to easily estimate the magnitude of inertial effects in the interaction of dislocations with localized obstacles for different obstacle strengths, -spacings and temperatures

Dislocation Substructures Formed After Fracture of Deformed Polycrystalline Cu-Al Alloys

Science.gov (United States)

Koneva, N. A.; Trishkina, L. I.; Cherkasova, T. V.

2017-08-01

The paper deals with the dislocation substructure of polycrystalline FCC alloys modified by plastic deformation at a distance from the area of the specimen fracture. Observations are performed using the transmission electron microscopy. Cu-Al alloys with grain size ranging from 10 to 240 μm are studied in this paper. The parameters of the dislocation substructure are measured and their variation is determined by the increasing distance from the fracture area. It is shown how the grain size influences these processes. The different dislocation substructures which determine the specimen fracture at a mesocscale level are found herein.

Possible origin of the discrepancy in Peierls stresses of fcc metals: First-principles simulations of dislocation mobility in aluminum

Science.gov (United States)

Shin, Ilgyou; Carter, Emily A.

2013-08-01

Dislocation motion governs the strength and ductility of metals, and the Peierls stress (σp) quantifies dislocation mobility. σp measurements carry substantial uncertainty in face-centered cubic (fcc) metals, and σp values can differ by up to two orders of magnitude. We perform first-principles simulations based on orbital-free density functional theory (OFDFT) to calculate the most accurate currently possible σp for the motion of (1)/(2)111 dislocations in fcc Al. We predict the σps of screw and edge dislocations (dissociated in their equilibrium state) to be 1.9×10-4G and 4.9×10-5G, respectively (G is the shear modulus). These values fall within the range of measurements from mechanical deformation tests (10-4-10-5G). OFDFT also finds a new metastable structure for a screw dislocation not seen in earlier simulations, in which a dislocation core on the glide plane does not dissociate into partials. The corresponding σp for this undissociated dislocation is predicted to be 1.1×10-2G, which agrees with typical Bordoni peak measurements (10-2-10-3G). The calculated σps for dissociated and undissociated screw dislocations differ by two orders of magnitude. The presence of undissociated, as well as dissociated, screw dislocations may resolve the decades-long mystery in fcc metals regarding the two orders of magnitude discrepancy in σp measurements.

The dislocation-internal friction peak γ in tantalum

International Nuclear Information System (INIS)

Baur, J.; Benoit, W.; Schultz, H.

1989-01-01

Torsion-pendulum measurements were carried out on high-purity single crystal specimens of tantalum, having extremely low oxygen contents ( 2 peak, which appears close to γ is small traces of oxygen are presents. The γ 2 peak was formerly explained as a ''dislocation-enhanced Snoek peak''. The γ peak recovers at the peak temperature, whereas the γ 2 peak is more stable. On the basis of their results, and making use of earlier investigations of Rodrian and Schultz, the authors suggest that γ 2 is modified γ relaxation, related to screw-dislocation segments, stabilized by oxygen-decorated kinks. The stability of the γ 2 peak allows an accurate determination of the activation energy, found to be 1.00 +- 0.03 eV. This value is distinctly lower than the activation energy of the oxygen Snoek effect (1.10 eV) and is related here to the mechanism of ''kink-pair formation'' in screw dislocations, as the original γ peak. The numerical value is compatible with recent values derived from flow-stress measurements. The peak γ 2 shows increasing stability with increasing oxygen content. This is explained by single- and multi-decorated kinks

3D DDD modelling of dislocation-precipitate interaction in a nickel-based single crystal superalloy under cyclic deformation

Science.gov (United States)

Lin, Bing; Huang, Minsheng; Zhao, Liguo; Roy, Anish; Silberschmidt, Vadim; Barnard, Nick; Whittaker, Mark; McColvin, Gordon

2018-06-01

Strain-controlled cyclic deformation of a nickel-based single crystal superalloy has been modelled using three-dimensional (3D) discrete dislocation dynamics (DDD) for both [0 0 1] and [1 1 1] orientations. The work focused on the interaction between dislocations and precipitates during cyclic plastic deformation at elevated temperature, which has not been well studied yet. A representative volume element with cubic γ‧-precipitates was chosen to represent the material, with enforced periodical boundary conditions. In particular, cutting of superdislocations into precipitates was simulated by a back-force method. The global cyclic stress-strain responses were captured well by the DDD model when compared to experimental data, particularly the effects of crystallographic orientation. Dislocation evolution showed that considerably high density of dislocations was produced for [1 1 1] orientation when compared to [0 0 1] orientation. Cutting of dislocations into the precipitates had a significant effect on the plastic deformation, leading to material softening. Contour plots of in-plane shear strain proved the development of heterogeneous strain field, resulting in the formation of shear-band embryos.

Molecular dynamics simulations of the interaction between 60 deg. dislocation and self-interstitial cluster in silicon

International Nuclear Information System (INIS)

Jing Yuhang; Meng Qingyuan; Zhao Wei

2009-01-01

Molecular dynamics simulations are performed to investigate the interaction between 60 deg. shuffle dislocation and tetrainterstitial (I 4 ) cluster in silicon, using Stillinger-Weber (SW) potential to calculate the interatomic forces. Based on Parrinello-Rahman method, shear stress is exerted on the model to move the dislocation. Simulation results show that the I 4 cluster can bend the dislocation line and delay the dislocation movement. During the course of intersection the dislocation line sections relatively far away from the I 4 cluster accelerate first, and then decelerate. The critical shear stress unpinning the 60 deg. dislocation from the I 4 cluster decreases as the temperature increases in the models.

Stage IV work-hardening related to disorientations in dislocation structures

DEFF Research Database (Denmark)

Pantleon, W.

2004-01-01

The effect of deformation-induced disorientations on the work-hardening of metals is modelled based on dislocation dynamics. Essentially, Kocks’ dislocation model describing stage III hardening is extended to stage IV by incorporation of excess dislocations related to the disorientations....... Disorientations evolving from purely statistical reasons — leading to a square root dependence of the average disorientation angle on strain — affect the initial work-hardening rate (and the saturation stress) of stage III only slightly. On the other hand, deterministic contributions to the development...... of disorientations, as differences in the activated slip systems across boundaries, cause a linear increase of the flow stress at large strains. Such a constant work-hardening rate is characteristic for stage IV....

Nature of Dislocations in Silicon

DEFF Research Database (Denmark)

Hansen, Lars Bruno; Stokbro, Kurt; Lundqvist, Bengt

1995-01-01

Interaction between two partial 90 degrees edge dislocations is studied with atomic-scale simulations using the effective-medium tight-binding method. A large separation between the two dislocations (up to 30 Angstrom), comparable to experimental values, is achieved with a solution of the tight-b...

Trapping of edge dislocations by a moving smectic-A smectic-B interface

Science.gov (United States)

Oswald, P.; Lejcek, L.

1991-09-01

We analyze how the motion of the edge dislocations of the smectic-A liquid crystal allows the system to relax plastically the stresses that are generated during the growth of the smectic-B plastic crystal. These stresses are both due, to the density difference between the two phases, and to the layer thickness variation at the phase transition. In particular, we calculate under which conditions a dislocation can be trapped by the smectic-B phase. Finally, we suggest that this dynamical trapping is responsible for the very large amount of stacking faults observed by X-ray diffraction. Nous analysons comment le mouvement des dislocations coin du cristal liquide smectique A permet de relaxer plastiquement les contraintes induites par la croissance du cristal plastique smectique B. Ces contraintes sont engendrées à la fois par la différence de densité qui existe entre les deux phases et par la variation d'épaisseur des couches à la transition. Nous calculons en particulier dans quelles conditions une dislocation coin peut être piégée par le smectique B. Enfin, nous suggérons que ce piégeage dynamique est à l'origine de la très forte densité de fautes d'empilement qui est couramment observée aux rayons X dans la phase B.

Dislocations and other topological oddities

Science.gov (United States)

Pieranski, Pawel

2016-03-01

We will show that the book Dislocations by Jacques Friedel, published half a century ago, can still be recommended, in agreement with the author's intention, as a textbook ;for research students at University and for students at engineering schools as well as for research engineers;. Indeed, today dislocations are known to occur not only in solid crystals but also in many other systems discovered more recently such as colloidal crystals or liquid crystals having periodic structures. Moreover, the concept of dislocations is an excellent starting point for lectures on topological defects occurring in systems equipped with order parameters resulting from broken symmetries: disclinations in nematic or hexatic liquid crystals, dispirations in chiral smectics or disorientations in lyotropic liquid crystals. The discussion of dislocations in Blue Phases will give us an opportunity to call on mind Sir Charles Frank, friend of Jacques Friedel since his Bristol years, who called these ephemeral mesophases ;topological oddities;. Being made of networks of disclinations, Blue Phases are similar to Twist Grain Boundary (TGB) smectic phases, which are made of networks of screw dislocations and whose existence was predicted by de Gennes in 1972 on the basis of the analogy between smectics and superconductors. We will stress that the book by Jacques Friedel contains seeds of this analogy.

Interaction between infinitely many dislocations and a semi-infinite crack in one-dimensional hexagonal quasicrystal

International Nuclear Information System (INIS)

Liu Guan-Ting; Yang Li-Ying

2017-01-01

By means of analytic function theory, the problems of interaction between infinitely many parallel dislocations and a semi-infinite crack in one-dimensional hexagonal quasicrystal are studied. The analytic solutions of stress fields of the interaction between infinitely many parallel dislocations and a semi-infinite crack in one-dimensional hexagonal quasicrystal are obtained. They indicate that the stress concentration occurs at the dislocation source and the tip of the crack, and the value of the stress increases with the number of the dislocations increasing. These results are the development of interaction among the finitely many defects of quasicrystals, which possesses an important reference value for studying the interaction problems of infinitely many defects in fracture mechanics of quasicrystal. (paper)

Dislocations

Science.gov (United States)

... Fitness Diseases & Conditions Infections Drugs & Alcohol School & Jobs Sports Expert Answers (Q&A) Staying Safe Videos for Educators Search English Español First Aid: ... bones become separated. Dislocations are caused by falls and hard impacts, such as in sports injuries, and are more common in teens than ...

Late total hip arthroplasty dislocation due to yoga

Directory of Open Access Journals (Sweden)

Murillo Adrados, MD

2018-06-01

Full Text Available Yoga has become a popular form of exercise, recreation, and meditation for adults in the United States. As the popularity of both yoga and the incidence of hip replacements have both coincidentally increased over the last 2 decades, we imagine that the number of total hip replacement patients partaking in the practice of yoga has also increased. There are no clear guidelines available for yoga practice following hip replacement. To date, there have been no published reports of prosthetic hip dislocations during yoga. We present 2 cases of late total hip dislocations during yoga and provide a review of the available orthopaedic literature and our recommendations on patient restrictions and education with respect to practicing yoga after a hip replacement.

Formation of dislocation dipoles in irradiated graphite

International Nuclear Information System (INIS)

Niwase, Keisuke

2005-01-01

Recently, we have proposed a dislocation dipole accumulation model to explain the irradiation-induced amorphization of graphite. However, the structure of dislocation dipole in the hexagonal networks is still an open question at the atomic-level. In this paper, we propose a possible formation process of the dislocation dipole

Imaging findings of anterior hip dislocations

Energy Technology Data Exchange (ETDEWEB)

Pfeifer, Kyle [Mallinckrodt Institute of Radiology, Department of Radiology, St. Louis, MO (United States); Leslie, Michael [Yale School of Medicine, Department of Orthopedics and Rehabilitation, New Haven, CT (United States); Menn, Kirsten; Haims, Andrew [Yale University School of Medicine, Department of Radiology and Biomedical Imaging, New Haven, CT (United States)

2017-06-15

Anterior hip dislocations are rare orthopedic emergencies resulting from high-energy trauma and have unique imaging characteristics on radiography, computed tomography (CT), and magnetic resonance imaging (MRI). Imaging findings on CT and MRI allow for the prompt recognition and classification of anterior hip dislocations, which guides patient management and reduces complications. The purpose of this article is to review imaging findings of anterior hip dislocations, specifically focusing on CT and MRI. (orig.)

An atomic string model for a screw dislocation in iron: Implications for the development of interatomic potentials

International Nuclear Information System (INIS)

Gilbert, M.R.; Dudarev, S.L.; Chiesa, S.; Derlet, P.M.

2009-01-01

Thermally activated motion of screw dislocations is the rate-determining mechanism for plastic deformation and fracture of body centred cubic (bcc) metals and alloys. Recent experimental observations by S.G. Roberts' group at Oxford showed that ductile-brittle behaviour of bcc vanadium, tungsten, pure iron, and iron-chromium alloys is controlled by an Arrhenius process in which the energy for thermal activation is proportional to the formation energy for a double kink on a b= 1/2 screw dislocation, where b is the Burgers vector of the dislocation. Interpreting these experimental observations and extending the analysis to the case of irradiated materials requires developing a full quantitative treatment for perfect and kinked screw dislocations. Modelling screw dislocations also presents a challenge for the development of interatomic potentials. Recent density functional theory (DFT) calculations have revealed that the ground-state structure of the core of screw dislocations in all the bcc transition metals is non-degenerate and symmetric, whereas inter-atomic potentials used in molecular dynamics simulations for these metals often predict a degenerate, symmetry-broken core-structure. In this work we show how, by treating the structure of a screw dislocation within a multistring Frenkel-Kontorova model, we can develop a criterion that guarantees the correct symmetric core of the dislocation. Extending this treatment, we find a systematic recipe for constructing Finnis-Sinclair-type potentials that are able, as a matter of routine, produce non-degenerate core structures of 1/2 screw dislocations. Modelling thermally activated mobility of screw dislocations also requires that the transition pathway between stable core positions of a dislocation is accurately reproduced. DFT data indicates that the shape of the 'Peierls energy barrier' is a single-hump curve, including transitional configurations close to the so-called 'hard' structure. Interatomic potentials have, up

High-temperature discrete dislocation plasticity

Science.gov (United States)

Keralavarma, S. M.; Benzerga, A. A.

2015-09-01

A framework for solving problems of dislocation-mediated plasticity coupled with point-defect diffusion is presented. The dislocations are modeled as line singularities embedded in a linear elastic medium while the point defects are represented by a concentration field as in continuum diffusion theory. Plastic flow arises due to the collective motion of a large number of dislocations. Both conservative (glide) and nonconservative (diffusion-mediated climb) motions are accounted for. Time scale separation is contingent upon the existence of quasi-equilibrium dislocation configurations. A variational principle is used to derive the coupled governing equations for point-defect diffusion and dislocation climb. Superposition is used to obtain the mechanical fields in terms of the infinite-medium discrete dislocation fields and an image field that enforces the boundary conditions while the point-defect concentration is obtained by solving the stress-dependent diffusion equations on the same finite-element grid. Core-level boundary conditions for the concentration field are avoided by invoking an approximate, yet robust kinetic law. Aspects of the formulation are general but its implementation in a simple plane strain model enables the modeling of high-temperature phenomena such as creep, recovery and relaxation in crystalline materials. With emphasis laid on lattice vacancies, the creep response of planar single crystals in simple tension emerges as a natural outcome in the simulations. A large number of boundary-value problem solutions are obtained which depict transitions from diffusional to power-law creep, in keeping with long-standing phenomenological theories of creep. In addition, some unique experimental aspects of creep in small scale specimens are also reproduced in the simulations.

Electrical conduction along dislocations in plastically deformed GaN

Energy Technology Data Exchange (ETDEWEB)

Kamimura, Y; Yokoyama, T; Oiwa, H; Edagawa, K [Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Yonenaga, I, E-mail: yasushi@iis.u-tokyo.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

2009-07-15

Electrical conduction along dislocations in plastically deformed n-GaN single crystals has been investigated by scanning spread resistance microscopy (SSRM). In the SSRM images, many conductive spots have been observed, which correspond to electrical conduction along the dislocations introduced by deformation. Here, the introduced dislocations are b=(a/3)<1overline 210> edge dislocations parallel to the [0001] direction. The current values at the spots normalized to the background current value are larger than 100. Previous works have shown that grown-in edge dislocations in GaN are nonconductive. The high conductivity of the deformation-introduced edge dislocations in the present work suggests that the conductivity depends sensitively on the dislocation core structure.

Gravitational dislocations of sedimentary deposits in southern UkSSR

Energy Technology Data Exchange (ETDEWEB)

Belokrys, L S

1980-01-01

Characteristics of several types of dislocations are presented: pseudosynclines in Pontian deposits, and fracture dislocations; brachy-syncline subsidence folds; protrusion folds and their relics (easily diagnosed landslide faults). It is shown that two circumstances govern local folding and fracture faults in horizontally bedded sedimentary deposits in the southern Ukraine: 1) the alternation of competent and incompetent deposits in the fault, 2) the increasing unevenness of the static burden on the plastic layers as the erosion network grows. These faults are undoubtedly linked with geomorphological, not tectonic, elements.

Rare Inferior Shoulder Dislocation (Luxatio Erecta)

OpenAIRE

Cift, Hakan; Soylemez, Salih; Demiroglu, Murat; Ozkan, Korhan; Ozden, Vahit Emre; Ozkut, Afsar T.

2015-01-01

Although shoulder dislocations have been seen very frequently, inferior dislocation of shoulder constitutes only 0.5% of all shoulder dislocations. We share our 4 patients with luxatio erecta and present their last clinical control. 2 male and 2 female Caucasian patients were diagnosed as luxatio erecta. Patients’ ages were 78, 62, 65, and 76. All patients’ reduction was done by traction-abduction and contour traction maneuver in the operating room. The patients had no symptoms and no limitat...

Temporomandibular joint dislocation due to acute propranolol intoxication

Directory of Open Access Journals (Sweden)

Abbas Aghabiklooei

2010-07-01

Full Text Available Abbas Aghabiklooei1, Homan Elahi2, Babak Mostafazadeh31Department of Medical Toxicology and Forensic Medicine, Iran University of Medical Sciences, Tehran, Iran; 2Firouzgar Hospital, Department of ENT, Tehran, Iran; 3Department of Medical Toxicology and Forensic Medicine, Shaheed Beheshty University of Medical Sciences, Tehran, IranAbstract: Temporomandibular joint (TMJ dislocation has not previously been reported as a complication of beta-blocker toxicity. We are reporting two cases of TMJ dislocation resulted from acute severe intoxication with pure propranolol (PPL for the first time. Bilateral TMJ dislocation happened in two patients who were admitted to intensive care unit with diagnosis of severe acute PPL toxicity. Clinical diagnosis of TMJ dislocation was obtained by physical examination. Successful reduction was performed for both patients without subsequent recurrence in two weeks following hospital discharge. Both of our subjects had no previous history of lower jaw dislocation. There was not any risk factor for dislocation such as convulsion during admission period, recent face trauma, or oral manipulation by the medical team. This study showed that TMJ dislocation may occur after severe acute PPL toxicity probably due to spastic contraction of the lateral pterygoid muscle. This is against previously mentioned hypothesis that stated masseteric muscles contraction as the main cause of a bilateral dislocated TMJ.Keywords: propranolol, toxicity, temporomandibular joint dislocation

Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction.

Science.gov (United States)

Groiss, Heiko; Glaser, Martin; Marzegalli, Anna; Isa, Fabio; Isella, Giovanni; Miglio, Leo; Schäffler, Friedrich

2015-06-01

By transmission electron microscopy with extended Burgers vector analyses, we demonstrate the edge and screw character of vertical dislocations (VDs) in novel SiGe heterostructures. The investigated pillar-shaped Ge epilayers on prepatterned Si(001) substrates are an attempt to avoid the high defect densities of lattice mismatched heteroepitaxy. The Ge pillars are almost completely strain-relaxed and essentially defect-free, except for the rather unexpected VDs. We investigated both pillar-shaped and unstructured Ge epilayers grown either by molecular beam epitaxy or by chemical vapor deposition to derive a general picture of the underlying dislocation mechanisms. For the Burgers vector analysis we used a combination of dark field imaging and large-angle convergent beam electron diffraction (LACBED). With LACBED simulations we identify ideally suited zeroth and second order Laue zone Bragg lines for an unambiguous determination of the three-dimensional Burgers vectors. By analyzing dislocation reactions we confirm the origin of the observed types of VDs, which can be efficiently distinguished by LACBED. The screw type VDs are formed by a reaction of perfect 60° dislocations, whereas the edge types are sessile dislocations that can be formed by cross-slips and climbing processes. The understanding of these origins allows us to suggest strategies to avoid VDs.

The epidemiology of shoulder dislocations in Oslo.

Science.gov (United States)

Liavaag, S; Svenningsen, S; Reikerås, O; Enger, M; Fjalestad, T; Pripp, A H; Brox, J I

2011-12-01

There are few previous studies on the incidence of shoulder dislocation in the general population. The aim of the study was to report the incidence of acute shoulder dislocations in the capital of Norway (Oslo) in 2009. Patients of all ages living in Oslo, sustaining a dislocation of the glenohumeral joint, were identified using electronic diagnosis registers, patient protocols, radiological registers of the hospitals, and the Norwegian Patient Register (NPR). The overall incidence rate was 56.3 [95% confidence interval (CI) 50.2-62.4] per 100,000 person-years, with rates of 82.2 (95% CI 71.7-92.8) and 30.9 (95% CI 24.5-37.3) in men and women, respectively. The incidence of primary dislocations was 26.2 (95% CI 22.1-30.4). The overall incidence of shoulder dislocations in Oslo was higher than previously reported incidences. The incidence of primary dislocations was also higher than that in previously reported studies for the general population but it was close to the incidence reported in Malmø, Sweden. © 2011 John Wiley & Sons A/S.

Atomistically-informed dislocation dynamics in FCC crystals

International Nuclear Information System (INIS)

Martinez, E.; Marian, J.; Arsenlis, A.; Victoria, M.; Martinez, E.; Victoria, M.; Perlado, J.M.

2008-01-01

Full text of publication follows. We will present a nodal dislocation dynamics (DD) model to simulate plastic processes in fcc crystals. The model explicitly accounts for all slip systems and Burgers vectors observed in fcc systems, including stacking faults and partial dislocations. We derive simple conservation rules that describe all partial dislocation interactions rigorously and allow us to model and quantify cross-slip processes, the structure and strength of dislocation junctions, and the formation of fcc-specific structures such as stacking fault tetrahedra. The DD framework is built upon isotropic non-singular linear elasticity, and supports itself on information transmitted from the atomistic scale. In this fashion, connection between the meso and micro scales is attained self-consistently with core parameters fitted to atomistic data. We perform a series of targeted simulations to demonstrate the capabilities of the model, including dislocation reactions and dissociations and dislocation junction strength. Additionally we map the four-dimensional stress space relevant for cross-slip and relate our fundings to the plastic behaviour of' monocrystalline fcc metals. (authors)

Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

Directory of Open Access Journals (Sweden)

W. A. Sasangka

2016-09-01

Full Text Available Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs. We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2 at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2. Dislocation movement correlates well with high tensile stress (∼1.6 GPa at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 00 } and 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 01 } slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

Dislocation Dynamics in Al-Li Alloys. Mean Jump Distance and Activation Length of Moving Dislocations

NARCIS (Netherlands)

Hosson, J.Th.M. De; Huis in 't Veld, A.; Tamler, H.; Kanert, O.

1984-01-01

Pulsed nuclear magnetic resonance proved to be a complementary new technique for the study of moving dislocations in Al-Li alloys. The NMR technique, in combination with transmission electron microscopy and strain-rate change experiments have been applied to study dislocation motion in Al-2.2 wt% Li

Dislocation motion in InSb crystals under a magnetic field

CERN Document Server

Darinskaya, E V; Erofeeva, S A

2002-01-01

Dislocation displacements under the action of a permanent magnetic field without mechanical loading in differently doped InSb crystals are investigated. The dependences of the mean dislocation path length and the relative number of divergence and tightening half-loops on the magnetic induction and preliminary load are obtained. Experiments on n-InSb crystals with Te impurities and on p-InSb crystals with Ge impurities have shown a sensitivity of the magnetoplasticity to the conductivity type and the dopant content. Study of the magnetoplastic effect in the initial deformed InSb crystals shows that internal stresses decrease the lengths of divergence dislocation paths and simultaneously increase the threshold magnetic field above which the magnetoplastic effect exists. Possible reasons for the observed phenomena are discussed.

Dislocation reduction in heteroepitaxial Ge on Si using SiO{sub 2} lined etch pits and epitaxial lateral overgrowth

Energy Technology Data Exchange (ETDEWEB)

Leonhardt, Darin; Han, Sang M. [Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2011-09-12

We report a technique that significantly reduces threading dislocations in Ge on Si heteroepitaxy. Germanium is first grown on Si and etched to produce pits in the surface where threading dislocations terminate. Further processing leaves a layer of SiO{sub 2} only within etch pits. Subsequent selective epitaxial Ge growth results in coalescence above the SiO{sub 2}. The SiO{sub 2} blocks the threading dislocations from propagating into the upper Ge epilayer. With annealed Ge films grown on Si, the said method reduces the defect density from 2.6 x 10{sup 8} to 1.7 x 10{sup 6} cm{sup -2}, potentially making the layer suitable for electronic and photovoltaic devices.

Electron-dislocation interaction at low temperatures. Progress report

International Nuclear Information System (INIS)

1976-01-01

Studies of the interaction of mobile dislocations with electrons have shown that dislocation motion can be, in part, described by treating the dislocation as an underdamped oscillator. In particular, studies in lead alloys have shown tht dislocation motion can be considered as the motion of string, slightly damped by electrons, without regard for any other lattice friction. In addition we have shown that silver solutes, in lead crystals, occupy, partially, interstitial sites. Finally, we have shown that dislocations in copper interact, unexpectedly, with electrons. This is shown by measuring the influence of a magnetic field on the flow stress of copper crystals at 4.2 0 K

Annihilation of interstitial-type dislocation loops in {alpha}-Fe during He irradiation

Energy Technology Data Exchange (ETDEWEB)

Xu, Q., E-mail: xu@rri.kyoto-u.ac.jp [Research Reactor Institute, Kyoto University, Osaka 590-0494 (Japan); Wang, Y.X. [Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Katakabe, Y. [Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580 (Japan); Iwakiri, H. [Faculty of Education, University of the Ryukyus, Okinawa 903-0213 (Japan); Yoshida, N. [Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580 (Japan); Sato, K.; Yoshiie, T. [Research Reactor Institute, Kyoto University, Osaka 590-0494 (Japan)

2011-10-01

Interstitial-type dislocation loops were formed in Fe-9Cr alloys on irradiation with 1-MeV He ions at 673 K. However, with increasing irradiation dose, the dislocation loops shrunk. A molecular dynamics simulation was used to elucidate the mechanism of this unexpected phenomenon. The simulation shows that, although the binding energy of a self-interstitial atom to a dislocation loop is normally greater than that of a vacancy, the energy hierarchy is reversed when He atoms decorate the loop. This may indicates preferential absorption of vacancies, causing loop shrinkage at high doses, consistent with experimental observation.

Annihilation of interstitial-type dislocation loops in α-Fe during He irradiation

International Nuclear Information System (INIS)

Xu, Q.; Wang, Y.X.; Katakabe, Y.; Iwakiri, H.; Yoshida, N.; Sato, K.; Yoshiie, T.

2011-01-01

Interstitial-type dislocation loops were formed in Fe-9Cr alloys on irradiation with 1-MeV He ions at 673 K. However, with increasing irradiation dose, the dislocation loops shrunk. A molecular dynamics simulation was used to elucidate the mechanism of this unexpected phenomenon. The simulation shows that, although the binding energy of a self-interstitial atom to a dislocation loop is normally greater than that of a vacancy, the energy hierarchy is reversed when He atoms decorate the loop. This may indicates preferential absorption of vacancies, causing loop shrinkage at high doses, consistent with experimental observation.

Plastic deformation of crystals: analytical and computer simulation studies of dislocation glide

International Nuclear Information System (INIS)

Altintas, S.

1978-05-01

The plastic deformation of crystals is usually accomplished through the motion of dislocations. The glide of a dislocation is impelled by the applied stress and opposed by microstructural defects such as point defects, voids, precipitates and other dislocations. The planar glide of a dislocation through randomly distributed obstacles is considered. The objective of the present research work is to calculate the critical resolved shear stress (CRSS) for athermal glide and the velocity of the dislocation at finite temperature as a function of the applied stress and the nature and strength of the obstacles. Dislocation glide through mixtures of obstacles has been studied analytically and by computer simulation. Arrays containing two kinds of obstacles as well as square distribution of obstacle strengths are considered. The critical resolved shear stress for an array containing obstacles with a given distribution of strengths is calculated using the sum of the quadratic mean of the stresses for the individual obstacles and is found to be in good agreement with the computer simulation data. Computer simulation of dislocation glide through randomly distributed obstacles containing up to 10 6 obstacles show that the CRSS decreases as the size of the array increases and approaches a limiting value. Histograms of forces and of segment lengths are obtained and compared with theoretical predictions. Effects of array shape and boundary conditions on the dislocation glide are also studied. Analytical and computer simulation results are compared with experimental results obtained on precipitation-, irradiation-, forest-, and impurity cluster-hardening systems and are found to be in good agreement

Plastic deformation of crystals: analytical and computer simulation studies of dislocation glide

Energy Technology Data Exchange (ETDEWEB)

Altintas, S.

1978-05-01

The plastic deformation of crystals is usually accomplished through the motion of dislocations. The glide of a dislocation is impelled by the applied stress and opposed by microstructural defects such as point defects, voids, precipitates and other dislocations. The planar glide of a dislocation through randomly distributed obstacles is considered. The objective of the present research work is to calculate the critical resolved shear stress (CRSS) for athermal glide and the velocity of the dislocation at finite temperature as a function of the applied stress and the nature and strength of the obstacles. Dislocation glide through mixtures of obstacles has been studied analytically and by computer simulation. Arrays containing two kinds of obstacles as well as square distribution of obstacle strengths are considered. The critical resolved shear stress for an array containing obstacles with a given distribution of strengths is calculated using the sum of the quadratic mean of the stresses for the individual obstacles and is found to be in good agreement with the computer simulation data. Computer simulation of dislocation glide through randomly distributed obstacles containing up to 10/sup 6/ obstacles show that the CRSS decreases as the size of the array increases and approaches a limiting value. Histograms of forces and of segment lengths are obtained and compared with theoretical predictions. Effects of array shape and boundary conditions on the dislocation glide are also studied. Analytical and computer simulation results are compared with experimental results obtained on precipitation-, irradiation-, forest-, and impurity cluster-hardening systems and are found to be in good agreement.

Topological defect and quasi-particle dynamics in charge density waves

International Nuclear Information System (INIS)

Hayashi, Masahiko; Ebisawa, Hiromichi

2010-01-01

The dynamics of topological defects (dislocations) in charge density waves (CDW's) is largely affected by the quasi-particle dynamics in the cores of the dislocations. The dislocations mediate the conversion of the electron number between condensate and quasi-particle sub-systems. This is especially important in the sliding conduction of CDW. In this work we propose a simple model, which is obtained by extending the Ginzburg-Landau theory partially taking into account the quasi-particle dynamics in the sense of two-fluid model. We perform the numerical simulation of sliding conduction of CDW based on our model. Using this model we may clarify the detailed process of dislocation nucleation and annihilation near the contacts.

The core structure of a Frank dislocation in Ni3(Al,Nb)

International Nuclear Information System (INIS)

Bonnet, R.; Loubradou, M.; Derder, C.; Catana, A.

1991-01-01

This paper reports on the core structures of dislocations in L1 2 crystals, in view of understanding the anomalous yield behavior of strength with increasing temperature. Theoretical approaches have been proposed for explaining the dissociations of these dislocations, and experimental evidences have been reported for such dissociations using either the weak beam technique or more recently the HRTEM (High Resolution Transmission Electron Microscopy) technique. Recent HRTEM results show that for Ni 3 A1 the partial dislocations 1/2 left-angle 110 right-angle which limit an APB (Antiphase Boundary) lying on (001) are only split over 0.1 - 0.3 nm along (111) planes, producing very high energy CSF's (Complex Stacking Faults) which limit an SISF (superlattice Intrinsic Stacking Fault) extended on a (111) plane. Concerning the 1/2 left-angle 111 right-angle Frank dislocation, which limits an SESF (Superlattice Extrinsic Stacking Fault), there are no reported results yet. Let us note, however, that for aluminum HRTEM images of Frank dislocation loops have been studied. This lack of information in the L1 2 crystals motivated the present HRTEM study

Modified rerouting procedure for failed peroneal tendon dislocation surgery.

Science.gov (United States)

Gaulke, R; Hildebrand, F; Panzica, M; Hüfner, T; Krettek, C

2010-04-01

Recurrent dislocation of the peroneal tendons following operative treatment is relatively uncommon, but can be difficult to treat. We asked whether subligamental transposition of the peroneus brevis tendon, fibular grooving, and reattachment of the superior peroneal retinaculum for failed peroneal tendon dislocation surgery would achieve a stable fixation of the peroneal tendons and whether there would be restrictions of ROM or instability of the hindfoot. We reviewed six female patients (mean age, 24.5 years) with general laxity of joints preoperatively and at 6 weeks and 3, 6, and 12 months postoperatively. Within 1 year postoperatively no recurrence was found. In two ankles the extension was restricted 5 degrees to 10 degrees . In another pronation and supination was restricted 5 degrees each. Stability of the ankle increased in four patients and stayed unchanged in two. AOFAS score increased from a mean value of 36 +/- 20.6 preoperatively to 90 +/- 7 postoperatively at 1 year. We conclude transposition of the peroneus brevis tendon is a reasonable treatment for failed peroneal tendon dislocation surgery. Level IV, therapeutic study (prospective case series). See Guidelines for Authors for a complete description of levels of evidence.

Dislocation Climb Sources Activated by 1 MeV Electron Irradiation of Copper-Nickel Alloys

DEFF Research Database (Denmark)

Barlow, P.; Leffers, Torben

1977-01-01

Climb sources emitting dislocation loops are observed in Cu-Ni alloys during irradiation with 1 MeV electrons in a high voltage electron microscope. High source densities are found in alloys containing 5, 10 and 20% Ni, but sources are also observed in alloys containing 1 and 2% Ni. The range of ...

Atomic-scale dislocation dynamics in radiation damage environment

International Nuclear Information System (INIS)

Osetsky, Y.; Stoller, R.; Bacon, D.J.

2007-01-01

Full text of publication follows: The dynamics behavior of dislocations determines mechanical properties of crystalline materials. Long-range interactions between a moving dislocation and other defects can be treated within a continuum approach via interaction of their stress and strain fields. However, a vast contribution to mechanical properties depends on the direct interaction between dislocations and other defects and depends very much on the particular atomic scale structure of the both moving dislocation core and the obstacle. In this work we review recent progress in large-scale modeling of dislocation dynamics in metals at the atomic level by molecular dynamics and statics. We review the modem techniques used to simulate dynamics of dislocations in different lattice structures, the dependence on temperature, strain rate and obstacle size. Examples are given for bcc, fcc and hcp metals where edge and screw dislocations interact with vacancy (loops, voids, stacking fault tetrahedra, etc), self-interstitial clusters and secondary phase precipitates. Attention is paid to interpretation of atomistic results from the point of view of parameterization of continuum models. The latter is vitally necessary for further application in 3-dimensional dislocation dynamics within the multi-scale materials modeling approach. Research sponsored by the Division of Materials Sciences and Engineering and the Office of Fusion Energy Sciences, U.S. Department of Energy, under contract DE-AC0S-00OR22725 with UT-Battelle, LLC. (authors)

Interactions between Dislocations and Grain Boundaries

NARCIS (Netherlands)

Soer, Wouter Anthon

2006-01-01

Dislocations (line defects) and grain boundaries (planar defects) are two types of lattice defects that are crucial to the deformation behavior of metals. Permanent deformation of a crystalline material is microscopically associated with the nucleation and propagation of dislocations, and extensive

Role of fluttering dislocations in the thermal interface resistance between a silicon crystal and plastic solid 4He

Science.gov (United States)

Amrit, Jay; Ramiere, Aymeric; Volz, Sebastian

2018-01-01

A quantum solid (solid 4He) in contact with a classical solid defines a new class of interfaces. In addition to its quantum nature, solid 4He is indeed a very plastic medium. We examine the thermal interface resistance upon solidification of superfluid 4He in contact with a silicon crystal surface (111) and show that dislocations play a crucial role in the thermal interface transport. The growth of solid 4He and the measurements are conducted at the minimum of the melting curve of helium (0.778 K and ˜25 bar ). The results display a first-order transition in the Kapitza resistance from a value of RK ,L=(80 ±8 ) c m2K /W at a pressure of 24.5 bar to a value of RK ,S=(41.7 ±8 ) c m2K /W after the formation of solid helium at ˜25.2 bar . The drop in RK ,S is only of a factor of ˜2 , although transverse phonon modes in solid 4He now participate in heat transmission at the interface. We provide an explanation for the measured RK ,S by considering the interaction of thermal phonons with vibrating dislocations in solid 4He. We demonstrate that this mechanism, also called fluttering, induces a thermal resistance RF l∝NdT-6 , where T is the temperature and Nd is the density of dislocations. We estimate that for dislocation densities on the order of ˜107c m-2 , RF l predominates over the boundary resistance RK ,S. These fundamental findings shed light on the role of dislocations and provide a quantitative explanation for previous experiments which showed no measurable change in the Kapitza resistance between Cu and superfluid 4He upon solidification of the latter. This demonstrates the possibility of using dislocations as an additional means to tailor thermal resistances at interfaces, formed especially with a plastic material.

An irreducible ankle fracture dislocation: the Bosworth injury

NARCIS (Netherlands)

Schepers, Tim; Hagenaars, Tjebbe; den Hartog, Dennis

2012-01-01

Irreducible fracture dislocations of the ankle are rare and represent true orthopedic emergencies. We present a case of a fracture dislocation that was irreducible owing to a fixed dislocation of the proximal fibular fragment posterior to the lateral ridge of the tibia. This particular type of

Temporomandibular joint dislocation in an epileptic and mentally ...

African Journals Online (AJOL)

Theories regarding the pathogenesis of TMJ dislocation propose laxity of TMJ ligaments or capsule, excessive activity of the lateral pterygoid muscle (LPM)and erosion of the eminence'. TMJ dislocation can occur in an anterior, posterior, lateral and superior direction'. Clinical presentation of dislocated TMJ includes inability ...

Dissociated dislocations in Ni: a computational study

International Nuclear Information System (INIS)

Szelestey, P.; Patriarca, M.; Kaski, K.

2005-01-01

A systematic computational study of the behavior of a (1/2) dissociated screw dislocation in fcc nickel is presented, in which atomic interactions are described through an embedded-atom potential. A suitable external stress is applied on the system, both for modifying the equilibrium separation distance d and moving the dislocation complex. The structure of the dislocation and its corresponding changes during the motion are studied in the framework of the two-dimensional Peierls model, for different values of the ratio d/a', where a' is the period of the Peierls potential. The distance between the edge and screw components of the partials, as well as their widths, undergo a modulation with period a', as the dislocation moves, and the amplitudes of such oscillations are shown to depend on d/a'. The stress profile acting on the dislocation complex is analyzed and the effective Peierls stress is estimated for different values of d/a'

Correlations between critical current density, j{sub c}, critical temperature, T{sub c}, and structural quality of Y{sub 1}B{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

Energy Technology Data Exchange (ETDEWEB)

Chrzanowski, J.; Xing, W.B.; Atlan, D. [Simon Fraser Univ., British Columbia (Canada)] [and others

1994-12-31

Correlations between critical current density (j{sub c}) critical temperature (T{sub c}) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO{sub 3} single crystals. Distinct maxima in j{sub c} as a function of the linewidths of the (00{ell}) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j{sub c} indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical current density. T{sub c} increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j{sub c} and the density of edge dislocations N{sub D} was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N{sub D}{approximately}1-2 x 10{sup 9}/cm{sup 2}.

Self-organized pattern formation of biomolecules at silicon surfaces: Intended application of a dislocation network

International Nuclear Information System (INIS)

Kittler, M.; Yu, X.; Vyvenko, O.F.; Birkholz, M.; Seifert, W.; Reiche, M.; Wilhelm, T.; Arguirov, T.; Wolff, A.; Fritzsche, W.; Seibt, M.

2006-01-01

Defined placement of biomolecules at Si surfaces is a precondition for a successful combination of Si electronics with biological applications. We aim to realize this by Coulomb interaction of biomolecules with dislocations in Si. The dislocations form charged lines and they will be surrounded with a space charge region being connected with an electric field. The electric stray field in a solution of biomolecules, caused by dislocations located close to the Si surface, was estimated to yield values up to few kVcm -1 . A regular dislocation network can be formed by wafer direct bonding at the interface between the bonded wafers in case of misorientation. The adjustment of misorientation allows the variation of the distance between dislocations in a range from 10 nm to a few μm. This is appropriate for nanobiotechnology dealing with protein or DNA molecules with sizes in the nm and lower μm range. Actually, we achieved a distance between the dislocations of 10-20 nm. Also the existence of a distinct electric field formed by the dislocation network was demonstrated by the technique of the electron-beam-induced current (EBIC). Because of the relatively short range of the field, the dislocations have to be placed close to the surface. We positioned the dislocation network in an interface being 200 nm parallel to the Si surface by layer transfer techniques using hydrogen implantation and bonding. Based on EBIC and luminescence data we postulate a barrier of the dislocations at the as bonded interface < 100 meV. We plan to dope the dislocations with metal atoms to increase the electric field. We demonstrated that regular periodic dislocation networks close to the Si surface formed by bonding are realistic candidates for self-organized placing of biomolecules. Experiments are underway to test whether biomolecules decorate the pattern of the dislocation lines

Lack of experience is a significant factor in the missed diagnosis of perilunate fracture dislocation or isolated dislocation

Directory of Open Access Journals (Sweden)

Ilker Çolak

2018-01-01

Conclusion: The results of this study indicated that lack of experience was the most important factor in the misdiagnosis of perilunate fracture dislocation or isolated dislocation. Level of Evidence: Level IV, diagnostic study.

Dislocation-free zone model of fracture comparison with experiments

International Nuclear Information System (INIS)

Ohr, S.M.; Chang, S.

1982-01-01

The dislocation-free zone (DFZ) model of fracture has been extended to study the relationship between the stress intensity factor, extent of plastic deformation, and crack tip geometry of an elastic-plastic crack as a function of applied stress. The results show that the stress intensity factor K decreases from the elastic value at first slowly, then goes rapidly to zero as the number of dislocations in the plastic zone increases. The crack with a zero stress intensity factor has its crack tip stress field completely relaxed by plastic deformation and hence is called a plastic crack. Between the elastic and plastic cracks, a wide range of elastic-plastic cracks having both a stress singularity and a plastic zone are possible. These elastic-plastic cracks with a DFZ are predicted if there is a critical stress intensity factor K/sub g/ required for the generation of dislocations at the crack tip. The expression for K/sub g/ is obtained from the crack tip dislocation nucleation model of Rice and Thomson. In most metals, the magnitude of K/sub g/ is less than the critical stress intensity factor for brittle fracture K/sub c/. The values of K are determined from electron microscope fracture experiments for various metals and they are found to be in good agreement with the K/sub g/ predicted from the model. It is concluded that for most ductile and semibrittle metals, the mechanism of dislocation generation is more important than the fracture surface energy in determining the stress intensity factor at the crack tip

First principles simulations of antiphase defects on the SP 900 partial dislocation in silicon

International Nuclear Information System (INIS)

Valladares, Alexander; Sutton, A P

2006-01-01

We study the structure and energies of formation of antiphase defects on the single period (SP) 90 0 partial dislocation in silicon using a first principles density functional method. We consider two types of antiphase defect, the type first proposed by Hirsch (1980 J. Microsc. 118 3) wholly inside the dislocation core, and another type that lies partly outside the core. Both types are stable and contain one atom which is threefold coordinated. Each of these atoms has a dangling hybrid which lies in a direction perpendicular to the dislocation line on the slip plane. We obtain values of 1.39 ± 0.03 eV and 1.41 ± 0.03 eV for the average formation energy of single antiphase defects of the inside and outside types, respectively. We have obtained, using a tight binding scheme, band structures corresponding to these two types of defect, and we find both of them to be associated with states in the gap and each dangling hybrid to contain one electron

Transition pathways in the unfaulting of dislocation loops

International Nuclear Information System (INIS)

Kubota, Alison; Wolfer, W.G.

2005-01-01

In order to study the dynamic mechanism of loop unfaulting, we performed large-scale classical molecular dynamics simulations involving computational cells with several millions of atoms. To induce dislocation loop unfaulting, we launched 1 ps duration traction stress pulses at a free surface of the computational box. In many cases, we observe unfaulting to involve both intuitive and complex dislocation processes with multiple Shockley partial dislocations. However, in some instances, we observe unfaulting to occur by a sudden instability of the stacking fault without clear traces of dislocation reactions

Hip Dislocation Increases Roughness of Oxidized Zirconium Femoral Heads in Total Hip Arthroplasty: An Analysis of 59 Retrievals

Science.gov (United States)

Moussa, Mohamed E.; Esposito, Christina I.; Elpers, Marcella E.; Wright, Timothy M.; Padgett, Douglas E.

2014-01-01

The aims of this study were to assess damage on the surface of retrieved oxidized zirconium metal (OxZr) femoral heads, to measure surface roughness of scratches, and to evaluate the extent of surface effacement using scanning electron microscopy (SEM). Ceramic zirconia-toughened alumina (ZTA) heads were analyzed for comparison. OxZr femoral heads explanted for recurrent dislocation had the most severe damage (p<0.001). The median surface roughness of damaged OxZr femoral heads was 1.49μm, compared to 0.084μm for damaged ZTA heads and 0.052μm for undamaged OxZr (p<0.001). This may be of clinical concern because increased surface roughness has the potential to increase the wear of polyethylene liners articulating against these OxZr heads in THA. PMID:25443362

Dislocation-stacking fault tetrahedron interaction: what can we learn from atomic-scale modelling

International Nuclear Information System (INIS)

Osetsky, Yu.N.; Stoller, R.E.; Matsukawa, Y.

2004-01-01

The high number density of stacking fault tetrahedra (SFTs) observed in irradiated fcc metals suggests that they should contribute to radiation-induced hardening and, therefore, taken into account when estimating mechanical properties changes of irradiated materials. The central issue is describing the individual interaction between a moving dislocation and an SFT, which is characterized by a very fine size scale, ∼100 nm. This scale is amenable to both in situ TEM experiments and large-scale atomic modelling. In this paper we present results of an atomistic simulation of dislocation-SFT interactions using molecular dynamics (MD). The results are compared with observations from in situ deformation experiments. It is demonstrated that in some cases the simulations and experimental observations are quite similar, suggesting a reasonable interpretation of experimental observations

Palmar dislocation of scaphoid and lunate

Directory of Open Access Journals (Sweden)

Khalid Koulali Idrissi

2011-11-01

Full Text Available A palmar dislocation of scaphoid and lunate is uncommon. We have found only 19 reported cases in the literature. We reported a simultaneous, divergent dislocation. The closed reduction followed by percutaneous pinning has given a good result without avascular necrosis of any carpal bone.

[New varieties of lateral metatarsophalangeal dislocations of the great toe].

Science.gov (United States)

Bousselmame, N; Rachid, K; Lazrak, K; Galuia, F; Taobane, H; Moulay, I

2001-04-01

We report seven cases of traumatic dislocation of the great toe, detailing the anatomy, the mechanism of injury and the radiographic diagnosis. We propose an additional classification based on three hereto unreported cases. Between october 1994 and october 1997, we treated seven patients with traumatic dislocation of the first metatarso-phalangeal joint of the great toe. There were six men and one woman, mean age 35 years (range 24 - 44 years). Dislocation was caused by motor vehicle accidents in four cases and by falls in three. Diagnosis was made on anteroposterior, lateral and medial oblique radiographs. According to Jahss' classification, there was one type I and three type IIB dislocations. There was also one open lateral dislocation and two dorsomedial dislocations. Only these dorsomedial dislocations required open reduction, done via a dorsal approach. Mean follow-up was 17.5 months (range 9 - 24 months) in six cases. One patient was lost to follow-up. The outcome was good in six cases and poor in one (dorsomedial dislocation). Dislocation of the first metatarso-phalangeal joint of the great toe is an uncommon injury. In 1980, Jahss reported two cases and reviewed three others described in the literature. He proposed three types of dislocation based on the feasibility of closed reduction (type I, II and IIB). In 1991, Copeland and Kanat reported a unique case in which there was an association of IIA and IIB lesions. They proposed an addition to the classification (type IIC). In 1994, Garcia Mata et al. reported another case which had not been described by Jahss and proposed another addition. All dislocations reported to date have been sagittal dislocations. Pathological alteration of the collateral ligaments has not been previously reported. In our experience, we have seen one case of open lateral dislocation due, at surgical exploration, to medial ligament rupture and two cases of dorsomedial dislocation due, at surgical exploration, to lateral ligament

Dislocation defect interaction in irradiated Cu

International Nuclear Information System (INIS)

Schaeublin, R.; Yao, Z.; Spaetig, P.; Victoria, M.

2005-01-01

Pure Cu single crystals irradiated at room temperature to low doses with 590 MeV protons have been deformed in situ in a transmission electron microscope in order to identify the basic mechanisms at the origin of hardening. Cu irradiated to 10 -4 dpa shows at room temperature a yield shear stress of 13.7 MPa to be compared to the 8.8 MPa of the unirradiated Cu. Irradiation induced damage consists at 90% of 2 nm stacking fault tetrahedra, the remaining being dislocation loops and unidentified defects. In-situ deformation reveals that dislocation-defect interaction can take several forms. Usually, dislocations pinned by defects bow out under the applied stress and escape without leaving any visible defect. From the escape angles obtained at 183 K, an average critical stress of 100 MPa is deduced. In some cases, the pinning of dislocations leads to debris that are about 20 nm long, which formation could be recorded during the in situ experiment

Prediction of dislocation boundary characteristics

DEFF Research Database (Denmark)

Winther, Grethe

Plastic deformation of both fcc and bcc metals of medium to high stacking fault energy is known to result in dislocation patterning in the form of cells and extended planar dislocation boundaries. The latter align with specific crystallographic planes, which depend on the crystallographic......) and it is found that to a large extent the dislocations screen each other’s elastic stress fields [3]. The present contribution aims at advancing the previous theoretical analysis of a boundary on a known crystallographic plane to actual prediction of this plane as well as other boundary characteristics....... Crystal plasticity calculations combined with the hypothesis that these boundaries separate domains with local differences in the slip system activity are introduced to address precise prediction of the experimentally observed boundaries. The presentation will focus on two cases from fcc metals...

Mechanism of Strain Rate Effect Based on Dislocation Theory

International Nuclear Information System (INIS)

Kun, Qin; Shi-Sheng, Hu; Li-Ming, Yang

2009-01-01

Based on dislocation theory, we investigate the mechanism of strain rate effect. Strain rate effect and dislocation motion are bridged by Orowan's relationship, and the stress dependence of dislocation velocity is considered as the dynamics relationship of dislocation motion. The mechanism of strain rate effect is then investigated qualitatively by using these two relationships although the kinematics relationship of dislocation motion is absent due to complicated styles of dislocation motion. The process of strain rate effect is interpreted and some details of strain rate effect are adequately discussed. The present analyses agree with the existing experimental results. Based on the analyses, we propose that strain rate criteria rather than stress criteria should be satisfied when a metal is fully yielded at a given strain rate. (condensed matter: structure, mechanical and thermal properties)

Piles of dislocation loops in real crystals

International Nuclear Information System (INIS)

Dubinko, V.I.; Turkin, A.A.; Yanovskij, V.V.

1985-01-01

Behaviour of piles of dislocation loops in crystals was studied in order to define metal swelling under irradiation. Energy of pile interaction with point defects and intrinsic pile energy are studied in the framework of the linear elasticity theory. Preference of dislocation pile calculated in the paper decreases with radiation dose hence, material swelling rate also decreases. Creation of conditions, which assume an existence of piles of dislocation loops being stable under irradiation, is of particular interest

Axillary artery injury secondary to inferior shoulder dislocation.

Science.gov (United States)

Plaga, Brad R; Looby, Peter; Feldhaus, Steven J; Kreutzmann, Karl; Babb, Aaron

2010-11-01

Dislocation injuries of the glenohumeral joint are common in the general public and generally are corrected without complication. One serious complication with shoulder dislocations, or the subsequent reduction, is a lesion to the axillary artery. This specific complication is most frequently seen in the elderly population, where vascular structures have become less flexible. Also, these injuries are most common in association with anterior dislocations of the shoulder. To bring awareness to the possibility of axillary artery injury with inferior dislocation of the shoulder, the treatment options, and a review. We report a 15-year-old male athlete who inferiorly dislocated his shoulder during wrestling practice. The injury was reduced at the scene with manual traction and the patient was transferred to our clinic for evaluation. The patient was determined to have a pseudoaneurysm of the axillary artery, and the history and treatment of the illness are presented. Axillary artery injuries secondary to shoulder dislocations are rare, especially in the young athlete, and proper recognition and treatment offer patients a full recovery. Copyright © 2010. Published by Elsevier Inc.

Stress-dislocation interaction mechanism in low-temperature thermo-compression sintering of Ag NPs

Science.gov (United States)

Wang, Fuliang; Tang, Zikai; He, Hu

2018-04-01

The sintering of metal nanoparticles (NPs) has been widely studied in the field of nanotechnology, and low-temperature sintering has become the industry standard. In this study, a molecular dynamics (MD) model was established to study the sintering behaviour of silver NPs during low-temperature thermo-compression. Primarily, we studied the sintering process, in which the ratio of neck radius to particle radius (x/r) changes. Under a uniaxial pressure, the maximum ratio in the temperature range 420-425 K was 1. According to the change of x/r, the process can be broken down into three stages: the neck-formation stage, neck-growth stage, and neck-stability stage. In addition, the relationship between potential energy, internal stress, and dislocation density during sintering is discussed. The results showed that cycling internal stress played an important role in sintering. Under the uniaxial pressure, the stress-dislocation interaction was found to be the major mechanism for thermo-compression sintering because the plastic deformation product dislocation intensified the diffusion of atoms. Also, the displacement vector, the mean square displacement, and the changing crystal structure during sintering were studied.

Stress-dislocation interaction mechanism in low-temperature thermo-compression sintering of Ag NPs

Directory of Open Access Journals (Sweden)

Fuliang Wang

2018-04-01

Full Text Available The sintering of metal nanoparticles (NPs has been widely studied in the field of nanotechnology, and low-temperature sintering has become the industry standard. In this study, a molecular dynamics (MD model was established to study the sintering behaviour of silver NPs during low-temperature thermo-compression. Primarily, we studied the sintering process, in which the ratio of neck radius to particle radius (x/r changes. Under a uniaxial pressure, the maximum ratio in the temperature range 420–425 K was 1. According to the change of x/r, the process can be broken down into three stages: the neck-formation stage, neck-growth stage, and neck-stability stage. In addition, the relationship between potential energy, internal stress, and dislocation density during sintering is discussed. The results showed that cycling internal stress played an important role in sintering. Under the uniaxial pressure, the stress-dislocation interaction was found to be the major mechanism for thermo-compression sintering because the plastic deformation product dislocation intensified the diffusion of atoms. Also, the displacement vector, the mean square displacement, and the changing crystal structure during sintering were studied.

Electron-dislocation interaction at low temperatures. Progress report

International Nuclear Information System (INIS)

1978-01-01

The interaction of mobile dislocations with electrons in copper and copper alloys has shown that dislocation motion in copper, at low temperature, can be treated as an analog of an underdamped oscillator. We have also shown that the viscous drag on mobile dislocations in type II superconductors can be treated as an acoustic attenuation of an elastic wave

Formation of disorientations in dislocation structures during plastic deformation

DEFF Research Database (Denmark)

Pantleon, W.

2002-01-01

Disorientations developing during plastic deformation in dislocation structures are investigated. Based on expected mechanisms for the formation of different types of dislocation boundaries (statistical trapping of dislocations or differently activated slip systems) the formation of the disorient...

Thermodynamic theory of dislocation-enabled plasticity

International Nuclear Information System (INIS)

Langer, J. S.

2017-01-01

The thermodynamic theory of dislocation-enabled plasticity is based on two unconventional hypotheses. The first of these is that a system of dislocations, driven by external forces and irreversibly exchanging heat with its environment, must be characterized by a thermodynamically defined effective temperature that is not the same as the ordinary temperature. The second hypothesis is that the overwhelmingly dominant mechanism controlling plastic deformation is thermally activated depinning of entangled pairs of dislocations. This paper consists of a systematic reformulation of this theory followed by examples of its use in analyses of experimentally observed phenomena including strain hardening, grain-size (Hall-Petch) effects, yielding transitions, and adiabatic shear banding.

Pair Interaction of Dislocations in Two-Dimensional Crystals

Science.gov (United States)

Eisenmann, C.; Gasser, U.; Keim, P.; Maret, G.; von Grünberg, H. H.

2005-10-01

The pair interaction between crystal dislocations is systematically explored by analyzing particle trajectories of two-dimensional colloidal crystals measured by video microscopy. The resulting pair energies are compared to Monte Carlo data and to predictions derived from the standard Hamiltonian of the elastic theory of dislocations. Good agreement is found with respect to the distance and temperature dependence of the interaction potential, but not regarding the angle dependence where discrete lattice effects become important. Our results on the whole confirm that the dislocation Hamiltonian allows a quantitative understanding of the formation and interaction energies of dislocations in two-dimensional crystals.

Thermal activation of dislocations in large scale obstacle bypass

Science.gov (United States)

Sobie, Cameron; Capolungo, Laurent; McDowell, David L.; Martinez, Enrique

2017-08-01

Dislocation dynamics simulations have been used extensively to predict hardening caused by dislocation-obstacle interactions, including irradiation defect hardening in the athermal case. Incorporating the role of thermal energy on these interactions is possible with a framework provided by harmonic transition state theory (HTST) enabling direct access to thermally activated reaction rates using the Arrhenius equation, including rates of dislocation-obstacle bypass processes. Moving beyond unit dislocation-defect reactions to a representative environment containing a large number of defects requires coarse-graining the activation energy barriers of a population of obstacles into an effective energy barrier that accurately represents the large scale collective process. The work presented here investigates the relationship between unit dislocation-defect bypass processes and the distribution of activation energy barriers calculated for ensemble bypass processes. A significant difference between these cases is observed, which is attributed to the inherent cooperative nature of dislocation bypass processes. In addition to the dislocation-defect interaction, the morphology of the dislocation segments pinned to the defects play an important role on the activation energies for bypass. A phenomenological model for activation energy stress dependence is shown to describe well the effect of a distribution of activation energies, and a probabilistic activation energy model incorporating the stress distribution in a material is presented.

Dechanneling by dislocation loops

International Nuclear Information System (INIS)

Chalant, Gerard.

1976-09-01

Ion implantation always induces the creation of dislocation loops. When the damage profile is determined by a backscattering technique, the dechanneling by these loops is implicitely at the origin of these measurements. The dechanneling of alpha particles by dislocation loops produced by the coalescence of quenched-in vacancies in aluminium is studied. The dechanneling and the concentration of loops were determined simultaneously. The dechanneling width around dislocation was found equal to lambda=6A, both for perfect and imperfect loops having a mean diameter d=250A. In the latter case, a dechanneling probability chi=0.34 was determined for the stacking fault, in good agreement with previous determination in gold. A general formula is proposed which takes into account the variation of lambda with the curvature (or the diameter d) of the loops. Finally, by a series of isothermal anneals, the self-diffusion energy ΔH of aluminium was measured. The value obtained ΔH=1.32+-0.10eV is in good agreement with the values obtained by other methods [fr

Recombination-related properties of a-screw dislocations in GaN: A combined CL, EBIC, TEM study

Energy Technology Data Exchange (ETDEWEB)

Medvedev, O. S., E-mail: o.s.medvedev@spbu.ru; Mikhailovskii, V. Yu. [V.A. Fok Institute of Physics, St. Petersburg State University (Russian Federation); IRC for Nanotechnology, Research Park, St.-Petersburg State University (Russian Federation); Vyvenko, O. F.; Bondarenko, A. S.; Ubyivovk, E. V. [V.A. Fok Institute of Physics, St. Petersburg State University (Russian Federation); Peretzki, P.; Seibt, M. [IV. Physikalisches Institut Georg-August Universität Göttingen (Germany)

2016-06-17

Cathodoluminescence (CL), electron beam current (EBIC) and transmission electron microscopy (TEM) techniques have been applied to investigate recombination properties and structure of freshly introduced dislocations in low-ohmic GaN crystals. It was confirmed that the only a-screw dislocations exhibited an intense characteristic dislocation-related luminescence (DRL) which persisted up to room temperature and was red-shifted by about 0.3 eV with respect to the band gap energy not only in HVPE but also in MOCVD grown samples. EBIC contrast of the dislocations was found to be temperature independent indicating that the dislocation-related recombination level is situated below 200 meV with respect of conduction band minimum. With the increasing of the magnification of the dislocation TEM cross-sectional images they were found to disappear, probably, due to the recombination enhanced dislocation glide (REDG) under electron beam exposure which was immediately observed in CL investigations on a large scale. The stacking fault ribbon in the core of dissociated a-screw dislocation which form a quantum well for electrons was proposed to play an important role both in DRL spectrum formation and in REDG.

Lens dislocation has a possible relationship with laser iridotomy

Directory of Open Access Journals (Sweden)

Mutoh T

2012-12-01

Full Text Available Tetsuya Mutoh,1,2 Kevin F Barrette,2 Yukihiro Matsumoto,1 Makoto Chikuda11Department of Ophthalmology, Dokkyo Medical University Koshigaya Hospital, Koshigaya City, Saitama, Japan; 2Department of Ophthalmology, Boston University School of Medicine, Boston, MA, USAAbstract: We report our recent experience of four eyes with spontaneous lens dislocation in four patients with no history of trauma or any systemic disease associated with zonular dialysis. Lens dislocation developed with 0.5 to 6 months following laser iridotomy. All patients were male and two eyes were complicated with acute primary angle closure glaucoma preoperatively. Case 1 showed bilateral lens dislocation, while cases 2 and 3 involved unilateral lens dislocation. Cases 2 and 3 showed lenses completely dislocated into the vitreous cavity. All cases needed lens removal and scleral fixation of intraocular lenses. Final visual acuity was 1.2 in all cases. We suspect that laser iridotomy may induce localized zonular dialysis that results in progressive zonular weakness, leading to lens dislocation.Keywords: lens dislocation, laser iridotomy, primary angle closure glaucoma

Thermally activated dislocation motion including inertial effects in solid solutions

International Nuclear Information System (INIS)

Isaac, R.D.

1977-01-01

Dislocation motion through an array of obstacles is considered in terms of the potential energy of the dislocation as it moves through the array. The obstacles form a series of potential wells and barriers which can trap the dislocations. The effect of thermal fluctuations and of a viscous drag on the motion of the dislocation is investigated by analogy with Brownian motion in a field of force. The rate of escape of a trapped dislocation is found to depend on the damping coefficient only for a large viscous drag. The probability that a dislocation will be trapped by a well or barrier is found to depend on the damping coefficient for a small viscous drag. This inertial effect determines how far a dislocation will travel after breaking away from an obstacle

Size-dependent plastic deformation characteristics in He-irradiated nanostructured Cu/Mo multilayers: Competition between dislocation-boundary and dislocation-bubble interactions

Energy Technology Data Exchange (ETDEWEB)

Zhang, J.Y.; Zeng, F.L.; Wu, K.; Wang, Y.Q.; Liang, X.Q.; Liu, G., E-mail: lgsammer@mail.xjtu.edu.cn; Zhang, G.J.; Sun, J., E-mail: junsun@mail.xjtu.edu.cn

2016-09-15

Nanoindentation methodology was used to investigate the plastic deformation characteristics, including the hardness (H), strain rate sensitivity (SRS, m) and activation volume (V{sup *}), of Cu/Mo nanostructured metallic multilayers (NMMs) with equal layer thickness (h) spanning from 10 to 200 nm before and after He-implantation at room temperature. Compared with the as-deposited Cu/Mo NMMs, the irradiated Cu/Mo samples exhibited the enhanced hardness particularly at great h, which is caused by the bubble-hardening effect. Unlike the as-deposited Cu/Mo NMMs displayed a monotonic increase in SRS (or a monotonic decrease in activation volume) with reducing h, the irradiated Cu/Mo samples manifested an unexpected non-monotonic variation in SRS as well as in activation volume. It was clearly unveiled that the SRS of irradiated Cu/Mo firstly decreased with reducing h down to a critical size of ~50 nm and subsequently increased with further reducing h, leaving a minimum value at the critical h. These phenomena are rationalized by considering a competition between dislocation-boundary and dislocation-bubble interactions. A thermally activated model based on the depinning process of bowed-out partial dislocations was employed to quantitatively account for the size-dependent SRS of Cu/Mo NMMs before and after irradiation. Our findings not only provide fundamental understanding of the effects of radiation-induced defects on plastic characteristics of NMMs, but also offer guidance for their microstructure sensitive design for performance optimization at extremes.

Size-dependent plastic deformation characteristics in He-irradiated nanostructured Cu/Mo multilayers: Competition between dislocation-boundary and dislocation-bubble interactions

International Nuclear Information System (INIS)

Zhang, J.Y.; Zeng, F.L.; Wu, K.; Wang, Y.Q.; Liang, X.Q.; Liu, G.; Zhang, G.J.; Sun, J.

2016-01-01

Nanoindentation methodology was used to investigate the plastic deformation characteristics, including the hardness (H), strain rate sensitivity (SRS, m) and activation volume (V * ), of Cu/Mo nanostructured metallic multilayers (NMMs) with equal layer thickness (h) spanning from 10 to 200 nm before and after He-implantation at room temperature. Compared with the as-deposited Cu/Mo NMMs, the irradiated Cu/Mo samples exhibited the enhanced hardness particularly at great h, which is caused by the bubble-hardening effect. Unlike the as-deposited Cu/Mo NMMs displayed a monotonic increase in SRS (or a monotonic decrease in activation volume) with reducing h, the irradiated Cu/Mo samples manifested an unexpected non-monotonic variation in SRS as well as in activation volume. It was clearly unveiled that the SRS of irradiated Cu/Mo firstly decreased with reducing h down to a critical size of ~50 nm and subsequently increased with further reducing h, leaving a minimum value at the critical h. These phenomena are rationalized by considering a competition between dislocation-boundary and dislocation-bubble interactions. A thermally activated model based on the depinning process of bowed-out partial dislocations was employed to quantitatively account for the size-dependent SRS of Cu/Mo NMMs before and after irradiation. Our findings not only provide fundamental understanding of the effects of radiation-induced defects on plastic characteristics of NMMs, but also offer guidance for their microstructure sensitive design for performance optimization at extremes.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Science.gov (United States)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Chronic asymptomatic dislocation of a total hip replacement: a case report

Directory of Open Access Journals (Sweden)

Lidder Surjit

2009-08-01

Full Text Available Abstract Introduction Dislocation of a prosthetic hip is the second most common complication after thromboembolic disease in patients undergoing total hip arthroplasty, with an incidence reported as 0.5 to 20%. Although the period of greatest risk for dislocation has been reported to be within the first few months after surgery, late dislocation occurs more commonly then previously thought. Case presentation A 60-year-old man underwent a right Exeter cemented total hip replacement and was subsequently discharged after appropriate follow-up. He next presented 8 years later complaining of pain in the left groin. An anterioposterior radiograph of the pelvis revealed degenerative changes in the left hip and a dislocated right total hip replacement. The dislocated femoral component had formed a neoacetabulum within the ilium, in which it was freely articulating. He remained pain-free on this side, had 5 cm of true leg length shortening with a good range of movement and was very pleased with his hip replacement. He was later placed on the waiting list for a left total hip replacement. Conclusion This case illustrates that a dislocated total hip replacement may occasionally not cause symptoms that cause significant discomfort or reduction in range of movement. The prosthetic femoral head can form a neoacetabulum allowing a full range of pain-free movement. Furthermore it emphasises that with an increased trend to earlier hospital discharge and shorter follow-up, potential complications may be missed. We urge a low index of suspicion for potential complications and suggest that regular review with radiographic follow-up should be made.

Electron backscatter diffraction study of dislocation content of a macrozone in hot-rolled Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Britton, T. Ben; Birosca, Soran; Preuss, Michael; Wilkinson, Angus J.

2010-01-01

We compare the dislocation substructure within macrozone and non-macrozone regions of hot-rolled Ti-6Al-4 V. Hough-based and cross-correlation-based analysis of electron backscatter diffraction (EBSD) patterns are used to establish the grain orientations and intra-granular misorientations, respectively. The set of geometrically necessary dislocations (GNDs) that support measured lattice curvatures and minimize the total GND line energy are calculated. The GND content in the macrozone is approximately twice that in the non-macrozone region, and GNDs are present at densities ∼10 times higher than GNDs.

Interferometric SAR and land deformation. Analysis using the dislocation model; Interferometric SAR to chikaku hendo. Dislocation model wo mochiita kaiseki

Energy Technology Data Exchange (ETDEWEB)

Matsushima, J; Otaki, T; Tanaka, A; Miyazaki, Y [Geological Survey of Japan, Tsukuba (Japan)

1996-05-01

The diastrophism by the earthquake-induced dislocation is investigated by interferometry (INSAR) which represents the diastrophism by the interference fringes of equiphase difference lines. A joint research group at Geographical Survey Institute and National Space Development Agency showed the diastrophism in the vicinity of the ground surfaces before and after the Hyogoken Nanbu Earthquake by the INSAR interference images in 1995. This paper discusses the effects of observation in the vision line direction from the satellite and dislocation parameters on the interference images. The dislocation model uses a slanted rectangular model in a semi-infinite medium, to calculate static displacements and strain distributions at the ground surface, when dislocation changes. It is found that the INSAR interference images, detecting displacements in the vision line direction from the satellite, significantly change as the vision line direction changes, and that the actual displacement cannot be given by the images alone. This paper also shows sensitivity of the interference images to the dislocation parameters. 3 refs., 9 figs., 1 tab.

Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

Science.gov (United States)

Trzynadlowski, Bart

code for both models is included. A moment-based model for dislocation loop formation from {311} defects in ion-implanted silicon was also developed and validated against experimental data. Ab initio density functional theory calculations of stacking faults and edge dislocations were performed to extract energies and elastic properties. This allowed the effect of applied stress on the evolution of {311} defects and dislocation loops to be investigated.

Stochastic dislocation kinetics and fractal structures in deforming metals probed by acoustic emission and surface topography measurements

Energy Technology Data Exchange (ETDEWEB)

Vinogradov, A. [Laboratory for the Physics of Strength of Materials and Intelligent Diagnostic Systems, Togliatti State University, Togliatti 445667 (Russian Federation); Laboratory of Hybrid Nanostructured Materials, NITU MISiS, Moscow 119490 (Russian Federation); Yasnikov, I. S. [Laboratory for the Physics of Strength of Materials and Intelligent Diagnostic Systems, Togliatti State University, Togliatti 445667 (Russian Federation); Estrin, Y. [Laboratory of Hybrid Nanostructured Materials, NITU MISiS, Moscow 119490 (Russian Federation); Centre for Advanced Hybrid Materials, Department of Materials Engineering, Monash University, Clayton, VIC 3800 (Australia)

2014-06-21

We demonstrate that the fractal dimension (FD) of the dislocation population in a deforming material is an important quantitative characteristic of the evolution of the dislocation structure. Thus, we show that peaking of FD signifies a nearing loss of uniformity of plastic flow and the onset of strain localization. Two techniques were employed to determine FD: (i) inspection of surface morphology of the deforming crystal by white light interferometry and (ii) monitoring of acoustic emission (AE) during uniaxial tensile deformation. A connection between the AE characteristics and the fractal dimension determined from surface topography measurements was established. As a common platform for the two methods, the dislocation density evolution in the bulk was used. The relations found made it possible to identify the occurrence of a peak in the median frequency of AE as a harbinger of plastic instability leading to necking. It is suggested that access to the fractal dimension provided by AE measurements and by surface topography analysis makes these techniques important tools for monitoring the evolution of the dislocation structure during plastic deformation—both as stand-alone methods and especially when used in tandem.

Dislocation behavior of surface-oxygen-concentration controlled Si wafers

International Nuclear Information System (INIS)

Asazu, Hirotada; Takeuchi, Shotaro; Sannai, Hiroya; Sudo, Haruo; Araki, Koji; Nakamura, Yoshiaki; Izunome, Koji; Sakai, Akira

2014-01-01

We have investigated dislocation behavior in the surface area of surface-oxygen-concentration controlled Si wafers treated by a high temperature rapid thermal oxidation (HT-RTO). The HT-RTO process allows us to precisely control the interstitial oxygen concentration ([O i ]) in the surface area of the Si wafers. Sizes of rosette patterns, generated by nano-indentation and subsequent thermal annealing at 900 °C for 1 h, were measured for the Si wafers with various [O i ]. It was found that the rosette size decreases in proportion to the − 0.25 power of [O i ] in the surface area of the Si wafers, which were higher than [O i ] of 1 × 10 17 atoms/cm 3 . On the other hand, [O i ] of lower than 1 × 10 17 atoms/cm 3 did not affect the rosette size very much. These experimental results demonstrate the ability of the HT-RTO process to suppress the dislocation movements in the surface area of the Si wafer. - Highlights: • Surface-oxygen-concentration controlled Si wafers have been made. • The oxygen concentration was controlled by high temperature rapid thermal oxidation. • Dislocation behavior in the surface area of the Si wafers has been investigated. • Rosette size decreased with increasing of interstitial oxygen atoms. • The interstitial oxygen atoms have a pinning effect of dislocations at the surface

Dislocation-induced nanoparticle decoration on a GaN nanowire.

Science.gov (United States)

Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

2015-02-04

GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

Dislocation, crystallite size distribution and lattice strain of magnesium oxide nanoparticles

Science.gov (United States)

Sutapa, I. W.; Wahid Wahab, Abdul; Taba, P.; Nafie, N. L.

2018-03-01

The oxide of magnesium nanoparticles synthesized using sol-gel method and analysis of the structural properties was conducted. The functional groups of nanoparticles has been analysed by Fourier Transform Infrared Spectroscopy (FT-IR). Dislocations, average size of crystal, strain, stress, the energy density of crystal, crystallite size distribution and morphologies of the crystals were determined based on X-ray diffraction profile analysis. The morphological of the crystal was analysed based on the image resulted from SEM analysis. The crystallite size distribution was calculated with the contention that the particle size has a normal logarithmic form. The most orientations of crystal were determined based on the textural crystal from diffraction data of X-ray diffraction profile analysis. FT-IR results showed the stretching vibration mode of the Mg-O-Mg in the range of 400.11-525 cm-1 as a broad band. The average size crystal of nanoparticles resulted is 9.21 mm with dislocation value of crystal is 0.012 nm-2. The strains, stress, the energy density of crystal are 1.5 x 10-4 37.31 MPa; 0.72 MPa respectively. The highest texture coefficient value of the crystal is 0.98. This result is supported by morphological analysis using SEM which shows most of the regular cubic-shaped crystals. The synthesis method is suitable for simple and cost-effective synthesis model of MgO nanoparticles.

Dislocation core structures in (0001) InGaN

International Nuclear Information System (INIS)

Rhode, S. L.; Sahonta, S.-L.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Horton, M. K.; Haigh, S. J.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

2016-01-01

Threading dislocation core structures in c-plane GaN and In x Ga 1−x N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In x Ga 1−x N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In x Ga 1−x N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In x Ga 1−x N, consistent with predictions from atomistic Monte Carlo simulations.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Directory of Open Access Journals (Sweden)

Quanlong Liu

Full Text Available Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001 substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM. The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Science.gov (United States)

Liu, Quanlong; Zhao, Chunwang; Su, Shaojian; Li, Jijun; Xing, Yongming; Cheng, Buwen

2013-01-01

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

Computed tomography of the patellofemoral alignment after arthroscopic reconstruction following patella dislocation

International Nuclear Information System (INIS)

Schroeder, R.J.; Hidajat, N.; Maeurer, J.; Felix, R.; Weiler, A.; Hoeher, J.

2003-01-01

Purpose: To evaluate the diagnostic impact of different CT-based measurements to analyze the patellofemoral alignment after arthroscopic reconstruction in patients with patella dislocation. Materials and Methods: In 18 patients with dislocation of the patella, CT of the patellofemoral joint was performed after arthroscopic reconstruction. Various methods recommended in the literature were used to analyze the structure and the alignment of the patellofemoral joint with a relaxed quadriceps muscle. Axial CT scans were taken in four different knee flexion angles (15 , 30 , 45 , 60 ). Results: After arthroscopic stabilization in patients with patella dislocation, only the lateral patellofemoral angle (15 and 30 knee flexion) and the congruence angle (15 knee flexion) showed significant differences between the CT-measurements in the normal and the operated group. The differences of the remaining mean values were not significant due to a high standard deviation. With increasing flexion of the knee, the differences between the normal and the dislocation group almost disappeared. Only the lateral patellofemoral angle, the patella tilt and the lateral patella shift revealed differences between the normal and the group with recurrent dislocation in every degree of knee flexion. With increasing knee flexion above 30 and especially at 60 , the majority of the measured values returned to the normal range. Conclusions: For CT-measurements of the patellofemoral joint after arthroscopic stabilization, the patellofemoral angle and the congruence angle seemed to be most useful. The measurements of the patellofemoral joint should be taken in various degrees of knee flexion. (orig.) [de

Dislocation: First Aid

Science.gov (United States)

... or a collision during contact or high-speed sports. Dislocation usually involves the body's larger joints. In adults, the most common site of the injury is the shoulder. In children, it's the elbow. ...

Rare Inferior Shoulder Dislocation (Luxatio Erecta

Directory of Open Access Journals (Sweden)

Hakan Cift

2015-01-01

Full Text Available Although shoulder dislocations have been seen very frequently, inferior dislocation of shoulder constitutes only 0.5% of all shoulder dislocations. We share our 4 patients with luxatio erecta and present their last clinical control. 2 male and 2 female Caucasian patients were diagnosed as luxatio erecta. Patients’ ages were 78, 62, 65, and 76. All patients’ reduction was done by traction-abduction and contour traction maneuver in the operating room. The patients had no symptoms and no limitation of range of motion of their shoulder at their last control. Luxatio erecta is seen rarely, and these patients may have neurovascular injury. These patients should be carefully examined and treated by the orthopaedic and traumatology surgeons.

Rare Inferior Shoulder Dislocation (Luxatio Erecta)

Science.gov (United States)

Cift, Hakan; Soylemez, Salih; Demiroglu, Murat; Ozkan, Korhan; Ozden, Vahit Emre; Ozkut, Afsar T.

2015-01-01

Although shoulder dislocations have been seen very frequently, inferior dislocation of shoulder constitutes only 0.5% of all shoulder dislocations. We share our 4 patients with luxatio erecta and present their last clinical control. 2 male and 2 female Caucasian patients were diagnosed as luxatio erecta. Patients' ages were 78, 62, 65, and 76. All patients' reduction was done by traction-abduction and contour traction maneuver in the operating room. The patients had no symptoms and no limitation of range of motion of their shoulder at their last control. Luxatio erecta is seen rarely, and these patients may have neurovascular injury. These patients should be carefully examined and treated by the orthopaedic and traumatology surgeons. PMID:25883820

Effect of foil orientation on damage accumulation during irradiation in magnesium and annealing response of dislocation loops

International Nuclear Information System (INIS)

Khan, A.K.; Yao, Z.; Daymond, M.R.; Holt, R.A.

2012-01-01

Highlights: ► Effect of foil orientation on electron irradiation damage in Mg is analyzed. ► Prism plane defects increases in prism foils as compared to basal foils. ► Basal faults were interstitial and prism plane defects were mixed in character. ► Shrinkage of interstitial dislocations takes place by the self diffusion mechanism. - Abstract: The effect of foil orientation on damage accumulation behavior in commercial purity magnesium is investigated by in situ electron and ion irradiation. Transmission electron microscope has been used to study the dislocation loops formed by the agglomeration of point defects during irradiation. It has been observed that the ratio of prism plane to basal plane defects increases as the foil orientation is changed from basal to the prism foil. The ratio of vacancy to interstitial defects also increases in prism foils as compared to the basal foils. This point defect accumulation behavior is reversed when magnesium is irradiated with 1 MeV Kr 2+ ions and the formation of basal plane dislocation loops were only observed in prism foils and did not take place in the basal foils. Analysis showed that all the basal plane dislocation loops have Burgers vector of the type 1/(6〈202 ¯ 3〉) and are interstitial in nature whereas prism plane dislocation loops have Burgers vector of the type 1/(3〈112 ¯ 0〉) and are of mixed interstitial/vacancy in character. In situ annealing experiments at different temperatures performed on electron irradiated magnesium foils suggest that those dislocation loops that become thermodynamically unstable anneal out in a matter of few seconds whereas other stable dislocation loops continue to shrink by absorbing surrounding vacancy clusters. The activation energy for the shrinkage of the interstitial dislocation loops has been derived and the results show that the shrinkage of interstitial dislocation loops takes place by the mechanism of vacancy assisted self diffusion.

Irradiation-induced amorphization in split-dislocation cores

International Nuclear Information System (INIS)

Ovid'ko, I.A.; Rejzis, A.B.

1999-01-01

The model describing special splitting of lattice and grain-boundary dislocations as one of the micromechanisms of solid-phase amorphization in irradiated crystals is proposed. Calculation of energy characteristics of the process of dislocations special splitting is carried out [ru

Combined application of ultrasound and of radiodiagnostic methods in diagnosis of posterior dislocation of the lens

International Nuclear Information System (INIS)

Preisova, J.; Vlkova, E.; Svacinova, J.; Papouskova, D.

1990-01-01

A case study is presented of a patient with opaque media of the left eye for seclusion and occlusion of the pupil. The cause of the unilateral chronic uveitis was visualized using ultrasound in A mode. It was found that the calcified lens was dislocated into the vitreous body and fixed to the posterior wall of the eye. The finding was confirmed by a negative X-ray picture and positive CT finding of a small foreign body with high density. The dislocation of the lens occurred after a blow on the left eye during boxing 15 years before the patient sought medical assistance for pain in the practically blind eyeball. (author). 4 figs., 9 refs

Effect of dislocation pile-up on size-dependent yield strength in finite single-crystal micro-samples

Energy Technology Data Exchange (ETDEWEB)

Pan, Bo; Shibutani, Yoji, E-mail: sibutani@mech.eng.osaka-u.ac.jp [Department of Mechanical Engineering, Osaka University, Suita 565-0871 (Japan); Zhang, Xu [State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace, Xi' an Jiaotong University, Xi' an 710049 (China); School of Mechanics and Engineering Science, Zhengzhou University, Zhengzhou 450001 (China); Shang, Fulin [State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace, Xi' an Jiaotong University, Xi' an 710049 (China)

2015-07-07

Recent research has explained that the steeply increasing yield strength in metals depends on decreasing sample size. In this work, we derive a statistical physical model of the yield strength of finite single-crystal micro-pillars that depends on single-ended dislocation pile-up inside the micro-pillars. We show that this size effect can be explained almost completely by considering the stochastic lengths of the dislocation source and the dislocation pile-up length in the single-crystal micro-pillars. The Hall–Petch-type relation holds even in a microscale single-crystal, which is characterized by its dislocation source lengths. Our quantitative conclusions suggest that the number of dislocation sources and pile-ups are significant factors for the size effect. They also indicate that starvation of dislocation sources is another reason for the size effect. Moreover, we investigated the explicit relationship between the stacking fault energy and the dislocation “pile-up” effect inside the sample: materials with low stacking fault energy exhibit an obvious dislocation pile-up effect. Our proposed physical model predicts a sample strength that agrees well with experimental data, and our model can give a more precise prediction than the current single arm source model, especially for materials with low stacking fault energy.

Dislocation core structures in (0001) InGaN

Energy Technology Data Exchange (ETDEWEB)

Rhode, S. L.; Sahonta, S.-L.; Kappers, M. J.; McAleese, C.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Haigh, S. J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

2016-03-14

Threading dislocation core structures in c-plane GaN and In{sub x}Ga{sub 1−x}N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In{sub x}Ga{sub 1−x}N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In{sub x}Ga{sub 1−x}N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In{sub x}Ga{sub 1−x}N, consistent with predictions from atomistic Monte Carlo simulations.

Interaction energy of interface dislocation loops in piezoelectric bi-crystals

Directory of Open Access Journals (Sweden)

Jianghong Yuan

2017-03-01

Full Text Available Interface dislocations may dramatically change the electric properties, such as polarization, of the piezoelectric crystals. In this paper, we study the linear interactions of two interface dislocation loops with arbitrary shape in generally anisotropic piezoelectric bi-crystals. A simple formula for calculating the interaction energy of the interface dislocation loops is derived and given by a double line integral along two closed dislocation curves. Particularly, interactions between two straight segments of the interface dislocations are solved analytically, which can be applied to approximate any curved loop so that an analytical solution can be also achieved. Numerical results show the influence of the bi-crystal interface as well as the material orientation on the interaction of interface dislocation loops.

Atomistically determined phase-field modeling of dislocation dissociation, stacking fault formation, dislocation slip, and reactions in fcc systems

Science.gov (United States)

Rezaei Mianroodi, Jaber; Svendsen, Bob

2015-04-01

The purpose of the current work is the development of a phase field model for dislocation dissociation, slip and stacking fault formation in single crystals amenable to determination via atomistic or ab initio methods in the spirit of computational material design. The current approach is based in particular on periodic microelasticity (Wang and Jin, 2001; Bulatov and Cai, 2006; Wang and Li, 2010) to model the strongly non-local elastic interaction of dislocation lines via their (residual) strain fields. These strain fields depend in turn on phase fields which are used to parameterize the energy stored in dislocation lines and stacking faults. This energy storage is modeled here with the help of the "interface" energy concept and model of Cahn and Hilliard (1958) (see also Allen and Cahn, 1979; Wang and Li, 2010). In particular, the "homogeneous" part of this energy is related to the "rigid" (i.e., purely translational) part of the displacement of atoms across the slip plane, while the "gradient" part accounts for energy storage in those regions near the slip plane where atomic displacements deviate from being rigid, e.g., in the dislocation core. Via the attendant global energy scaling, the interface energy model facilitates an atomistic determination of the entire phase field energy as an optimal approximation of the (exact) atomistic energy; no adjustable parameters remain. For simplicity, an interatomic potential and molecular statics are employed for this purpose here; alternatively, ab initio (i.e., DFT-based) methods can be used. To illustrate the current approach, it is applied to determine the phase field free energy for fcc aluminum and copper. The identified models are then applied to modeling of dislocation dissociation, stacking fault formation, glide and dislocation reactions in these materials. As well, the tensile loading of a dislocation loop is considered. In the process, the current thermodynamic picture is compared with the classical mechanical

Towards a quantification of stress corrosion mechanisms: numerical simulations of hydrogen-dislocations at the very crack tip; Vers une quantification des mecanismes de corrosion sous contrainte: simulations numeriques des interactions hydrogene-dislocations en pointe de fissure

Energy Technology Data Exchange (ETDEWEB)

Chateau, J.P

1999-01-05

We discuss the respective roles played by anodic dissolution and hydrogen in SCC mechanisms of f.c.c. materials, by studying the fracture of copper in nitrite for which we compare the results with that previously obtained in 316L steel in hot chloride. It is surprising to note that even the crystallographies at the scale of the micron are different, the macroscopic inclination of the fracture surfaces are the same. In the case of 316L steel, the formation of strong pile-ups in the presence of hydrogen leads to a zigzag fracture along alternated slip planes in the most general case. In the absence of hydrogen, as in copper, this mechanism effectively disappears. Furthermore, numerical simulations of crack shielding by dislocations emitted on one plane predict the macroscopic inclination. It shows that it is due to the mere dissolution which confines slip activity at the very crack tip in f.c.c. materials. In order to quantify the mechanism involved in 316L steel, we developed simulations which numerically solve the coupled diffusion and elasticity equations for hydrogen in the presence of a crack and shielding dislocations. They reproduce the mechanisms of hydrogen segregation on edge dislocations and of a localised softening effect by decreasing pair interactions. These mechanisms lead to i) a localisation of hydrogen embrittlement along the activated slip planes, ii) an increase of the dislocation density in pile-ups, and iii) a decrease of the cross slip probability. These three factors enhance micro-fracture at the head of a pile-up, which is responsible of thezigzag fracture. Introducing the free surface effects for hydrogen, we point out a new mechanism: the inhibition of dislocation sources at the crack tip, which is relevant with the brittle fracture surfaces observed in some cases in 316L steel. The quantification of these different mechanisms allows to give a relation between the local fracture possibility and the macroscopic parameters. A general law for

Fabrication of mesoscopic floating Si wires by introducing dislocations

International Nuclear Information System (INIS)

Motohashi, Mitsuya; Shimizu, Kazuya; Niwa, Masaaki; Suzuki, Toshiaki

2014-01-01

We fabricated a mesoscopic Si wire by introducing dislocations in a silicon wafer before HF anodization. The dislocations formed along the (111) crystal plane. The outline of the dislocation line was an inverted triangle. The resulting wire floated on a bridge girder and had a hybrid structure consisting of a porous layer and crystalline Si. The cross section of the wire had an inverted triangle shape. The wire formation mechanism is discussed in terms of carrier transport, crystal structure, and dislocation formation during anodization. (paper)

Fabrication of mesoscopic floating Si wires by introducing dislocations

Science.gov (United States)

Motohashi, Mitsuya; Shimizu, Kazuya; Suzuki, Toshiaki; Niwa, Masaaki

2014-12-01

We fabricated a mesoscopic Si wire by introducing dislocations in a silicon wafer before HF anodization. The dislocations formed along the (111) crystal plane. The outline of the dislocation line was an inverted triangle. The resulting wire floated on a bridge girder and had a hybrid structure consisting of a porous layer and crystalline Si. The cross section of the wire had an inverted triangle shape. The wire formation mechanism is discussed in terms of carrier transport, crystal structure, and dislocation formation during anodization.

Scattering of phonons by dislocations

International Nuclear Information System (INIS)

Anderson, A.C.

1979-01-01

By 1950, an explicit effort had been launched to use lattice thermal conductivity measurements in the investigation of defect structures in solids. This technique has been highly successful, especially when combined with the measurements of other properties such as optical absorption. One exception has been the study of dislocations. Although dislocations have a profound effect on the phonon thermal conductivity, the mechanisms of the phonon-dislocation interaction are poorly understood. The most basic questions are still debated in the literature. It therefore is pointless to attempt a quantitative comparison between an extensive accumulation of experimental data on the one hand, and the numerous theoretical models on the other. Instead, this chapter will attempt to glean a few qualitative conclusions from the existing experimental data. These results will then be compared with two general models which incorporate, in a qualitative manner, most of the proposed theories of the phonon-dislocation interaction. Until very recently, measurement of thermal conductivity was the only means available to probe the interaction between phonons and defects at phonon frequencies above the standard ultrasonic range of approx. = 10 9 Hz. The introductory paragraphs provide a brief review of the thermal-conductivity technique and the problems which are encountered in practice. There is also a brief presentation of the theoretical models and the complications that may occur in more realistic situations

Interaction of helium atoms with edge dislocations in α-Fe

International Nuclear Information System (INIS)

Heinisch, H.L.; Gao, F.; Kurtz, R.J.; Le, E.A.

2006-01-01

Formation energies, binding energies, and migration energies of interstitial He atoms in and near the core of an a/2 {1 1 0} edge dislocation in α-Fe are determined in atomistic simulations using conjugate gradient relaxation and the Dimer method for determining saddle point energies. Results are compared as a function of the proximity of the He to the dislocation core and the excess interstitial volume in regions around the dislocation. Interstitial He atoms have negative binding energy on the compression side of the dislocation and strong positive binding energy on the tension side. Even at low temperatures, interstitial He atoms in the vicinity of the dislocation easily migrate to the dislocation core, where they form crowdion interstitials oriented along the close-packed slip direction, with binding energies in excess of 2 eV. Crowdion interstitial He atoms diffuse along the dislocation core, transverse to the crowdion direction, with a migration energy of 0.4-0.5 eV

Strengthening mechanisms and dislocation processes in <111> textured nanotwinned copper

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083 (China); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Anh Kiet; Pei, Linqing; Zhang, Liang; Cheng, Kuiyu [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Huang, Minghui [State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083 (China)

2016-10-31

We use molecular dynamics simulations to elucidate the deformation mechanisms of <111> textured nanotwinned materials under tensile loading parallel to the twin boundary (TB). Our simulations reveal that the tensile strength of nanotwinned Cu increases monotonically as the twin spacing decreases. The strengthening effect mainly results from TB restricting the transmission of dislocations across the TB. Throughout the simulations the transmissions of dislocations across the TBs dominate the plastic deformation. Both direct and indirect transmissions are identified at atomic level. Direct transmission involves either successive transmission of the leading and trailing partials as in the Fleischer cross-slip model or absorption and desorption of the extended dislocation as in the Friedel-Escaig cross-slip mechanism. In contrast, indirect transmission involves the formation of special superjogs. The persistent slip transfer leaves zigzag slip traces on the cross-sectional view and the inhomogeneous deformation leads to the formation of intersecting slip bands on the plane view.

Edge dislocations in dicalcium silicates: Experimental observations and atomistic analysis

International Nuclear Information System (INIS)

Shahsavari, Rouzbeh; Chen, Lu; Tao, Lei

2016-01-01

Understanding defects and influence of dislocations on dicalcium silicates (Ca 2 SiO 4 ) is a challenge in cement science. We report a high-resolution transmission electron microscopy image of edge dislocations in Ca 2 SiO 4 , followed by developing a deep atomic understanding of the edge dislocation-mediated properties of five Ca 2 SiO 4 polymorphs. By decoding the interplay between core dislocation energies, core structures, and nucleation rate of reactivity, we find that γ-C2S and α-C2S polymorphs are the most favorable polymorphs for dislocations in Ca 2 SiO 4 , mainly due to their large pore channels which take away majority of the distortions imposed by edge dislocations. Furthermore, in the context of edge dislocation, while α-C2S represents the most active polymorph for reactivity and crystal growth, β-C2S represents the most brittle polymorph suitable for grinding. This work is the first report on the atomistic-scale analysis of edge dislocation-mediated properties of Ca 2 SiO 4 and may open up new opportunities for tuning fracture and reactivity processes of Ca 2 SiO 4 and other cement components.

Radiation damage buildup and dislocation evolution in Ni and equiatomic multicomponent Ni-based alloys

Energy Technology Data Exchange (ETDEWEB)

Levo, E. [Department of Physics, P.O. Box 43, FIN-00014, University of Helsinki (Finland); Granberg, F., E-mail: fredric.granberg@helsinki.fi [Department of Physics, P.O. Box 43, FIN-00014, University of Helsinki (Finland); Fridlund, C.; Nordlund, K. [Department of Physics, P.O. Box 43, FIN-00014, University of Helsinki (Finland); Djurabekova, F. [Department of Physics, P.O. Box 43, FIN-00014, University of Helsinki (Finland); Helsinki Institute of Physics, P.O. Box 43, FIN-00014, University of Helsinki (Finland)

2017-07-15

Single-phase multicomponent alloys of equal atomic concentrations (“equiatomic”) have proven to exhibit promising mechanical and corrosion resistance properties, that are sought after in materials intended for use in hazardous environments like next-generation nuclear reactors. In this article, we investigate the damage production and dislocation mobility by simulating irradiation of elemental Ni and the alloys NiCo, NiCoCr, NiCoFe and NiFe, to assess the effect of elemental composition. We compare the defect production and the evolution of dislocation networks in the simulation cells of two different sizes, for all five studied materials. We find that the trends in defect evolution are in good agreement between the different cell sizes. The damage is generally reduced with increased alloy complexity, and the dislocation evolution is specific to each material, depending on its complexity. We show that increasing complexity of the alloys does not always lead to decreased susceptibility to damage accumulation under irradiation. We show that, for instance, the NiCo alloy behaves very similarly to Ni, while presence of Fe or Cr in the alloy even as a third component reduces the saturated level of damage substantially. Moreover, we linked the defect evolution with the dislocation transformations in the alloys. Sudden drops in defect number and large defect fluctuations from the continuous irradiation can be explained from the dislocation activity.

Dislocation of primary total hip arthroplasty and the risk of redislocation.

LENUS (Irish Health Repository)

Brennan, Stephen A

2012-09-01

6554 primary total hip arthroplasties were reviewed. Risk factors for dislocation were analysed to assess which were important in terms of predicting recurrent instability. The patients risk of having a second dislocation was independently associated with the surgical approach adopted (p = 0.03) and the time to first dislocation from the primary hip replacement (p = 0.002). Early dislocators whose surgery was performed through an anterolateral approach had less recurrence than late dislocators through a posterior or transtrochanteric approach. None of the other risk factors including head size (p = 0.59), modularity (p = 0.54), mechanism of dislocation (p = 0.23), leg length discrepancy (p = 0.69) and acetabular inclination (p = 0.31) were influential. The use of an abduction brace was not useful in preventing a further dislocation with 69.2% of those braced re-dislocating compared to 68.5% who were not braced (p = 0.96).

Synergistic effects on dislocation loops in reduced-activation martensitic steel investigated by single and sequential hydrogen/helium ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Weiping [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Luo, Fengfeng [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029 (China); Yu, Yanxia; Zheng, Zhongcheng; Shen, Zhenyu [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Guo, Liping, E-mail: guolp@whu.edu.cn [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Ren, Yaoyao [Center for Electron Microscopy, Wuhan University, Wuhan 430072 (China); Suo, Jinping [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-10-15

Single-beam and sequential-beam irradiations were performed to investigate the H/He synergistic effect on dislocation loops in reduced-activation ferritic/martensitic (RAFM) steels. The irradiations were carried out with 10 keV H{sup +}, 18 keV He{sup +} and 160 keV Ar{sup +}, alone and in combination at 723 K. He{sup +} single-beam irradiation induced much larger dislocation loops than that induced by both H{sup +} and Ar{sup +} single-beam irradiation. H{sup +} post-irradiation after He{sup +} irradiation further increased the size of dislocation loops, whilst He{sup +} post-irradiation or Ar{sup +} post-irradiation following H{sup +} irradiation only slightly increased the size of dislocation loops. The experiment results indicate that pre-implanted H{sup +} can drastically inhibit the growth while post-implanted H{sup +} can significantly enhance the growth of dislocation loops induced by He{sup +} irradiation. The mechanisms behind the complex synergistic phenomena between H and He and the different roles that H and He played in the growth of dislocation loops are discussed.

What is the chance that a patella dislocation will happen a second time: update on the natural history of a first time patella dislocation in the adolescent.

Science.gov (United States)

Seitlinger, Gerd; Ladenhauf, Hannah N; Wierer, Guido

2018-02-01

Patellar instability occurs mainly in young patients and shows a high incidence of concomitant cartilage injuries. Recently there has been a strong attempt to identify risk factors and enhance imaging techniques to detect patients with an increased risk for recurrent patella dislocation.We describe current findings on factors associated with recurrent patella dislocation in the adolescent. Trochlear dysplasia, patellar height, patellar tilt, tibial tuberosity-trochlear groove distance, skeletal maturity, and history of contralateral patellar dislocation are well known significant risk factors for recurrence in adolescent patients. Predictive models to calculate risk of recurrence have been reported recently. The Patellar Instability Severity Score was the first to include demographic and anatomic factors, which is of major value when counseling patients and relatives. Several classification systems to predict the rate of recurrence after primary patella dislocation have been presented over the last years. Anatomic risk factors such as skeletal immaturity, trochlear morphology, patellar height, patellar tilt, and elevated tibial tuberosity-trochlear groove distance have been investigated. However, there is still a lack of knowledge as to how single risk factors or their interaction with each other may contribute.

Interstitial impurity interactions and dislocation microdynamics in Mo crystals

International Nuclear Information System (INIS)

Kwok, D.N.

1975-05-01

The effects of interstitial impurities on the mechanical properties of molybdenum are explored by comparing results obtained for crystals of various interstitial contents controlled by ultra-high vacuum outgassing. Results show a modulus reduction for as-grown samples and for outgassed specimens at low applied stresses. As a function of plastic microstrain, the values of modulus defect for both as-grown and outgassed specimens saturate at the same value. Interstitial impurities act as pinning agents to dislocation bowing, but when all the easy dislocation loops have broken away from local interstitial pins, the modulus defect reaches a constant saturation value. Etch pitting techniques were used to correlate microstrain observations with dislocation generation and motion. It has been found that edge dislocation generation and movement are active in the microstrain region while screw dislocations are relatively inactive until the macrostrain region is reached. Dislocation velocities range from 10 -6 to 10 -3 cm/s and the average distance between interstitial impurity pinning points is found to be approximately 8 x 10 -4 cm. (U.S.)

On damping of screw dislocation bending vibrations in dissipative crystal: limiting cases

Science.gov (United States)

Dezhin, V. V.

2018-03-01

The expression for the generalized susceptibility of the dislocation obtained earlier was used. The electronic drag mechanism of dislocations is considered. The study of small dislocation oscillations was limited. The contribution of the attenuation of low-frequency bending screw dislocation vibrations to the overall coefficient of dynamic dislocation drag in the long-wave and short-wave limits is calculated. The damping of short-wave bending screw dislocation vibrations caused by an external action of an arbitrary frequency has been investigated. The contribution of long-wave bending screw dislocation vibrations damping in the total drag coefficient at an arbitrary frequency is found.

Bilateral Posterior Tibial Tendon and Flexor Digitorum Longus Dislocations.

Science.gov (United States)

Padegimas, Eric M; Beck, David M; Pedowitz, David I

2017-04-01

The authors present a case of a previously healthy and athletic 17-year-old female who presented with a 3.5-year history of medial left ankle pain after sustaining an inversion injury while playing basketball. Prior to presentation, she had failed prior immobilization and physical therapy for a presumed ankles sprain. Physical examination revealed a dislocated posterior tibial tendon (PTT) that was temporarily reducible, but would spontaneously dislocate immediately after reduction. She had pain and snapping of the PTT with resisted ankle plantar flexion and resisted inversion as well as 4/5 strength in ankle inversion. The diagnosis of dislocated PTT was confirmed on magnetic resonance imaging (MRI). The patient underwent suture anchor repair of the medial retinaculum of the left ankle. At the time of surgery both the PTT and flexor digitorum longus (FDL) were dislocated. Three months postoperatively, the patient represented with PTT dislocation of the right (nonoperative) ankle confirmed by MRI. After failure of immobilization, physical therapy, and oral anti-inflammatory medications, the patient underwent suture anchor repair of the medial retinaculum of the right ankle. At 6 months postoperatively, the patient has 5/5 strength inversion bilaterally, no subluxation of either PTT, and has returned to all activities without limitation. The authors present this unique case of bilateral PTT dislocation and concurrent PTT/FDL dislocation along with review of the literature for PTT dislocation. The authors highlight the common misdaiganosis of this injury and highlight the successful results of surgical intervention. Level V: Case report.

Energetics of dislocation transformations in hcp metals

International Nuclear Information System (INIS)

Wu, Zhaoxuan; Yin, Binglun; Curtin, W.A.

2016-01-01

Dislocation core structures of hcp metals are highly complex and differ significantly among the hcp family. Some dislocations undergo unconventional transformations that have significant effects on the material plastic flow. Here, the energetics of dislocation dissociations are analyzed in a general anisotropic linear elastic theory framework for transformations in which changes in the partial Burgers vectors are small. Quantitative analyses on various transformations are made using DFT-computed stacking fault energies and partial Burgers vectors. Specifically, possible transformations of the mixed, edge, and screw 〈c+a〉 and screw 〈a〉 dislocations in 6 hcp metals (Mg, Ti, Zr, Re, Zn, Cd) are studied. Climb dissociation of mixed or edge 〈c+a〉 dislocations to the Basal plane is energetically favorable in all 6 metals and thus only limited by thermal activation. The 〈c+a〉 screw dislocation is energetically preferable on Pyramidal I for Ti, Zr, and Re, and on Pyramidal II for Zn and Cd. In Mg, the energy difference between screw 〈c+a〉 on Pyramidal I and II planes is small, suggesting relatively easy cross-slip. For the screw 〈a〉, Basal dissociation is energetically favorable in Mg, Re, Zn and Cd, while Prism dissociation is strongly favorable in Ti and Zr. Only Ti, Zr and Re show a metastable state for dissociation on the Prism plane, and the energy difference between screw 〈a〉 on the Prism and Pyramidal I planes is relatively small in all systems, suggesting relatively easy cross-slip of 〈a〉 in Ti and Zr. The elastic analysis thus provides a single framework able to capture the controlling energetics for different dissociations and slip systems in hcp metals. When the calculated energy differences are very small, the results point to the need for detailed modeling of the atomistic core structure. Moreover, the analyses rationalize broad experimental observations on dominant slip systems and dislocation behaviours, and provide

A parallel algorithm for 3D dislocation dynamics

International Nuclear Information System (INIS)

Wang Zhiqiang; Ghoniem, Nasr; Swaminarayan, Sriram; LeSar, Richard

2006-01-01

Dislocation dynamics (DD), a discrete dynamic simulation method in which dislocations are the fundamental entities, is a powerful tool for investigation of plasticity, deformation and fracture of materials at the micron length scale. However, severe computational difficulties arising from complex, long-range interactions between these curvilinear line defects limit the application of DD in the study of large-scale plastic deformation. We present here the development of a parallel algorithm for accelerated computer simulations of DD. By representing dislocations as a 3D set of dislocation particles, we show here that the problem of an interacting ensemble of dislocations can be converted to a problem of a particle ensemble, interacting with a long-range force field. A grid using binary space partitioning is constructed to keep track of node connectivity across domains. We demonstrate the computational efficiency of the parallel micro-plasticity code and discuss how O(N) methods map naturally onto the parallel data structure. Finally, we present results from applications of the parallel code to deformation in single crystal fcc metals

Mobility of dislocations in thermal aged and irradiated Fe-Cr alloys

International Nuclear Information System (INIS)

Terentyev, D.; Bonny, G.; Malerba, L.

2007-01-01

Full text of publication follows: The choice of the Cr concentration in reduced-activation ferritic/martensitic steels for fusion applications is largely based on the observed minimum radiation-induced embrittlement, in terms of ductile-to-brittle transition temperature shift (ΔDBTT), found around 9%Cr [1]. To date, no physical explanation for the existence of this minimum has been provided. It is known that in high-Cr ferritic alloys the precipitation of the Cr-rich, coherent α' phase occurs for concentrations above 9% Cr, both due to irradiation or thermal ageing at high enough temperature [2]. The formation of a fine dispersion of precipitates can therefore explain the increased embrittlement above this concentration, but it is unclear why the ΔDBTT should increase also for lower Cr concentrations. In addition, it is suspected that under irradiation a' precipitation may be induced also for Cr contents below 9% [3]. At the same time, it is known that below 9% Cr ferritic alloys exhibit a tendency to ordering, i.e. Cr atoms are not distributed as in a random solid solution and try to be as far apart as possible from each other, thereby tending to create a superlattice [4]. In order to cast some light on the effect that these phase changes may have on dislocation motion in the presence of radiation damage, we study at the atomic level the mobility of dislocations in FeCr alloys of different concentrations where Cr is distributed in different fashions (i.e. ordered, clustered or in a random solid solution) and in the presence of radiation damage (e.g. point-defect clusters created by cascades). The microstructure will be obtained by making the system evolve according to the acting thermodynamic driving forces (also in the presence of defects) using Metropolis Monte Carlo techniques. Subsequently, the simulation of the dislocation motion will be performed using large scale molecular dynamics, whereby the corresponding stress-strain curve can be obtained. The

First principles simulations of antiphase defects on the SP 90{sup 0} partial dislocation in silicon

Energy Technology Data Exchange (ETDEWEB)

Valladares, Alexander; Sutton, A P [Materials Modelling Laboratory, Department of Materials, University of Oxford, OX1 3PH (United Kingdom)

2006-04-19

We study the structure and energies of formation of antiphase defects on the single period (SP) 90{sup 0} partial dislocation in silicon using a first principles density functional method. We consider two types of antiphase defect, the type first proposed by Hirsch (1980 J. Microsc. 118 3) wholly inside the dislocation core, and another type that lies partly outside the core. Both types are stable and contain one atom which is threefold coordinated. Each of these atoms has a dangling hybrid which lies in a direction perpendicular to the dislocation line on the slip plane. We obtain values of 1.39 {+-} 0.03 eV and 1.41 {+-} 0.03 eV for the average formation energy of single antiphase defects of the inside and outside types, respectively. We have obtained, using a tight binding scheme, band structures corresponding to these two types of defect, and we find both of them to be associated with states in the gap and each dangling hybrid to contain one electron.

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Sugawara, Yoshihiro; Ishikawa, Yukari, E-mail: yukari@jfcc.or.jp [Japan Fine Ceramics Center, Atsuta, Nagoya, 456-8587 (Japan); Watanabe, Arata [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Miyoshi, Makoto; Egawa, Takashi [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technoloy, Nagoya, 466-8555 (Japan)

2016-04-15

The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

2015-07-15

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

Systematic Review and Meta-Analysis of Avascular Necrosis and Posttraumatic Arthritis After Traumatic Hip Dislocation.

Science.gov (United States)

Kellam, Patrick; Ostrum, Robert F

2016-01-01

To determine the incidence rate and associative factors for the development of avascular necrosis (AVN) and posttraumatic arthritis (PTA) after traumatic hip dislocation and time to reduction. A comprehensive search of databases including PubMed, Cochrane Database, and Embase through April 2014 for English articles reporting complications of AVN and PTA after hip dislocation was performed. Inclusion criteria were English-only studies, a patient population of adults, study outcomes of AVN and/or PTA reported, and articles reported at least type I dislocations. Two authors independently extracted data from the selected studies and the data collected were compared to verify agreement. Random-effects models were used for meta-analysis. The overall event rate of AVN and PTA was calculated and stratified based on Thompson-Epstein of the hip dislocation. Odds ratios were calculated for those articles that reported rates of AVN based on time to reduction. For anterior dislocations, the event rate for AVN ranged from 0.087 to 0.333, whereas the event rate for PTA ranged from 0.125 to 0.700. Analysis of posterior dislocations revealed that the event rate for AVN ranged from 0.106 to 0.430; additionally, the event rate for PTA ranged from 0.194 to 0.586. For posterior hip dislocations and type I and II anterior dislocations, the severity of the injury correlates with an increase in the development of AVN and PTA. The odds ratio of AVN for those hip dislocations reduced after 12 hours versus those reduced before 12 hours was 5.627. Prognostic Level IV. See Instructions for Authors for a complete description of levels of evidence.

Management of primary anterior shoulder dislocations using immobilization.

Science.gov (United States)

Smith, Brent I; Bliven, Kellie C Huxel; Morway, Genoveffa R; Hurbanek, Jason G

2015-05-01

Reference/Citation : Paterson WH, Throckmorton TW, Koester M, Azar FM, Kuhn JE. Position and duration of immobilization after primary anterior shoulder dislocation: a systemic review and meta-analysis of the literature. J Bone Joint Surg Am. 2010;92(18):2924-2933. Does an optimum duration and position of immobilization after primary anterior shoulder dislocation exist for reducing recurrence rates? MEDLINE/PubMed, EMBASE, and Cochrane databases were searched up to December 2009 without limitations. The search terms for all databases used were shoulder AND dislocation and shoulder AND immobilization. Criteria used to include articles were (1) English language, (2) prospective level I or level II studies (according to Journal of Bone & Joint Surgery guidelines), (3) nonoperative management of initial anterior shoulder dislocation, (4) minimum follow-up of 1 year, and (5) rate of recurrent dislocation as a reported outcome. A standardized evaluation method was used to extract data to allow assessment of methods issues and statistical analysis to determine sources of bias. The primary outcome was the recurrence rate after nonoperative management of anterior shoulder dislocation. Additional data extracted and used in subanalyses included duration and position of immobilization and age at the time of initial dislocation. Data were analyzed to determine associations among groups using 2-tailed Fisher exact tests. For pooled categorical data, relative risk of recurrent dislocation, 95% confidence intervals, and heterogeneity using the I(2) statistic and χ(2) tests were calculated for individual studies. The Mantel-Haenszel method was used to combine studies and estimate overall relative risk of recurrent dislocation and 95% confidence intervals. The statistical difference between duration of immobilization and position was determined using z tests for overall effect. Pooled results were presented as forest plots. In the initial search of the databases, the authors

Effect of dislocations on superconductivity. O vliyanii dislokatsiy na sverkhrpovodimost'

Energy Technology Data Exchange (ETDEWEB)

Agap' ev, B D; Bytsenko, A A; Sukhanov, S A

1976-01-01

Electron-dislocation interaction is analyzed here. The effect of dislocations on the superconductor characteristics is determined according to the Ginzburg-Landau method. Appreciable changes in the stability of the superconductive state are found to occur in the vicinity of dislocations.

A three dimensional discrete dislocation dynamics modelling of the early cycles of fatigue in an austenitic stainless steel 316L: dislocation microstructure and damage analysis

International Nuclear Information System (INIS)

Depres, Ch.

2005-01-01

A numerical code modelling the collective behaviour of dislocations at a mesoscopic scale (Discrete Dislocation Dynamics code) is used to analyse the cyclic plasticity that occurs in surface grains of an AISI 316L stainless steel, in order to understand the plastic mechanism involved in crack initiation in fatigue. Firstly, the analyses of both the formation and the evolution of the dislocation microstructures show the crucial role of cross-slip played in the strain localization in the form of slip bands. As the cycling proceeds, the slip bands exhibit well-organized dislocation arrangements that substitute to dislocation tangles, involving specific interaction mechanisms between primary and deviate systems. Secondly, both the surface displacements generated by plastic slip and the distortion energy induced by the dislocation microstructure have been analysed. We find that an irreversible surface relief in the form of extrusion/intrusion can be induced by cyclic slip of dislocations. The number of cycles for the crack initiation follows a Manson-Coffin type law. The analyses of the concentration of the distortion energy and its repartition in the slip bands show that beneficial energetic zones may be present at the very beginning of the cycling, and that mode-II crack propagation in the surface grains results from a succession of micro-crack initiations along primary slip plane, which is facilitated by various effects (stress concentration due to surface relief, environment effects...). Finally, a dislocation-based model for cyclic plasticity is proposed from Discrete Dislocation Dynamics results. (author)

Magnesium Vacancy Segregation and Fast Pipe Diffusion for the ½{110} Edge Dislocation in MgO

Science.gov (United States)

Walker, A. M.; Zhang, F.; Wright, K.; Gale, J. D.

2009-12-01

The movement of point defects in minerals plays a key role in determining their rheological properties, both by permitting diffusional creep and by allowing recovery by dislocation climb. Point defect diffusion can also control the kinetics of phase transitions and grain growth, and can determine the rate of chemical equilibration between phases. Because of this, and the difficulties associated with experimental studies of diffusion, the simulation of point defect formation and migration has been a subject of considerable interest in computational mineral physics. So far, studies have concentrated on point defects moving through otherwise perfect crystals. In this work we examine the behavior of magnesium vacancies close to the core of an edge dislocation in MgO and find that the dislocation dramatically changes the behavior of the point defect. An atomic scale model of the ½{110} edge dislocation in MgO was constructed by applying the anisotropic linear elastic displacement field to the crystal structure and subsequently minimizing the energy of the crystal close to the dislocation core using a parameterized potential model. This process yielded the structure of an isolated edge dislocation in an otherwise perfect crystal. The energy cost associated with introducing magnesium vacancies around the dislocation was then mapped and compared to the formation energy of an isolated magnesium vacancy in bulk MgO. We find that the formation energy of magnesium vacancies around the dislocation mirrors the elastic strain field. Above the dislocation line σxx and σyy are negative and the strain field is compressional. Atoms are squeezed together to make room for the extra half plane effectively increasing the pressure in this region. Below the dislocation line σxx and σyy are positive and the strain field is dilatational. Planes of atoms are pulled apart to avoid a discontinuity across the glide plane and the effective pressure is decreased. In the region with a

Kinetic competitivity between ordering and solute segregation to dislocations in Cu-20% at. Mn

International Nuclear Information System (INIS)

Donoso, E.; Varschavsky, A.

1997-01-01

By using differential scanning calorimetry (DSC) energetic measurements associated with the different peaks displayed during linear heating of Cu-20% at. Mn were made, employing quenched and cold-worked materials. Unique to the situation observed in the quenched alloy in which disperse order is developed, in the deformed alloy such process is inhibited by the segregation of solute atoms to partial dislocations. An appropriate model for calculation the energy evolved during the pinning process was applied in order to determine the dislocation density from the exothermic peak designated as stage 4. The computed value, which is in excellent agreement with the one obtained from expressions governing the energy release accompanying recrystallization allows to verify together with microhardness measurements and kinetic analysis that the first observed thermal effect in the deformed materials effectively corresponds a solute segregation process. (Author) 35 refs

Discuss the cause and treatment of pacemaker lead dislocation and deal with

International Nuclear Information System (INIS)

Chen Yueguang; Zhang Dadong; Lu Jie; Yang Hui; Liu Chunyan; Zhang Wei

2003-01-01

Objective: To follow up the patients with pacemaker, observe the condition of pacemaker lead, to explore the cause of lead dislocation, to find out and prevent its occurrence. Methods: Summarizing the clinical data of 6 patients with pacemaker, 7 pacemaker leads with 8 time dislocation, pacemaker 2 DDDR, 2 DDD, 2 VVI. Results: Four patients were punctured from right subclavian vein, one from left subclavian vein and one from right brachiocephalic vein; four leads were dislocation in atrium and one mildly dislocation; four leads dislocation in ventricle and two mildly dislocation; There were 3 old women with 4 leads and 5 times of dislocation

Growth and instability of charged dislocation loops under irradiation in ceramic materials

CERN Document Server

Ryazanov, A I; Kinoshita, C; Klaptsov, A V

2002-01-01

We have investigated the physical mechanisms of the growth and stability of charged dislocation loops in ceramic materials with very strong different mass of atoms (stabilized cubic zirconia) under different energies and types of irradiation conditions: 100-1000 keV electrons, 100 keV He sup + and 300 keV O sup + ions. The anomalous formation of extended defect clusters (charged dislocation loops) has been observed by TEM under electron irradiation subsequent to ion irradiation. It is demonstrated that very strong strain field (contrast) near charged dislocation loops is formed. The dislocation loops grow up to a critical size and after then become unstable. The instability of the charged dislocation loop leads to the multiplication of dislocation loops and the formation of dislocation network near the charged dislocation loops. A theoretical model is suggested for the explanation of the growth and stability of the charged dislocation loop, taking the charge state of point defects. The calculated distribution...

Hip dysplasia and congenital hip dislocation

Energy Technology Data Exchange (ETDEWEB)

Lingg, G.; Nebel, G.; von Torklus, D.

1981-11-01

In human genetics and orthopedics quite different answers have been given to the question of hereditary transmission and frequency of hip dysplasia in families of children with congenital hip dislocation. We therefore have made roentgenometric measurements of 110 parents of children with congenital hip dislocation. In 25% we found abnormal flat acetabulae, whereas 12% had pathologic deep hips. This may propose a new concept of morphology of congenital hip dysplasia.

Plain film diagnostic of the acromio-clavicular dislocation

International Nuclear Information System (INIS)

Vogel, H.; Thomae, J.; Jungbluth, K.H.; Hamburg Univ.

1980-01-01

The distance between the clavicula and the acromion, between the clavicula and the processus coracoideus and the step height between the acromion and the clavicula arch were measured on roentgen films. Evaluated were plain films of the shoulder and of the chest. 64 patients with dislocation of the acromio-clavicular joint were compared to patients without shoulder lesion. The comparance of both groups showed that measures exceeding the upper limits of the group without lesions are highly suggestive for acromio-clavicular dislocation. If one defines an acromio-clavicular dislocation as proved when two of the measured three distances exceed the upper limit, then an acromio-clavicular dislocation could be seen in 36% of the analysed cases on plain films of the shoulder and in 56% on plain chest films. (orig.) [de

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

Science.gov (United States)

Massabuau, Fabien C-P; Rhode, Sneha L; Horton, Matthew K; O'Hanlon, Thomas J; Kovács, András; Zielinski, Marcin S; Kappers, Menno J; Dunin-Borkowski, Rafal E; Humphreys, Colin J; Oliver, Rachel A

2017-08-09

We conducted a comprehensive investigation of dislocations in Al 0.46 Ga 0.54 N. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, the atomic structure and atom distribution at the dislocation core have been examined. We report that the core configuration of dislocations in AlGaN is consistent with that of other materials in the III-Nitride system. However, we observed that the dissociation of mixed-type dislocations is impeded by alloying GaN with AlN, which is confirmed by our experimental observation of Ga and Al atom segregation in the tensile and compressive parts of the dislocations, respectively. Investigation of the optical properties of the dislocations shows that the atom segregation at dislocations has no significant effect on the intensity recorded by cathodoluminescence in the vicinity of the dislocations. These results are in contrast with the case of dislocations in In 0.09 Ga 0.91 N where segregation of In and Ga atoms also occurs but results in carrier localization limiting non-radiative recombination at the dislocation. This study therefore sheds light on why InGaN-based devices are generally more resilient to dislocations than their AlGaN-based counterparts.

Nonlocal elasticity tensors in dislocation and disclination cores

International Nuclear Information System (INIS)

Taupin, V.; Gbemou, K.; Fressengeas, C.; Capolungo, L.

2017-01-01

We introduced nonlocal elastic constitutive laws for crystals containing defects such as dislocations and disclinations. Additionally, the pointwise elastic moduli tensors adequately reflect the elastic response of defect-free regions by relating stresses to strains and couple-stresses to curvatures, elastic cross-moduli tensors relating strains to couple-stresses and curvatures to stresses within convolution integrals are derived from a nonlocal analysis of strains and curvatures in the defects cores. Sufficient conditions are derived for positive-definiteness of the resulting free energy, and stability of elastic solutions is ensured. The elastic stress/couple stress fields associated with prescribed dislocation/disclination density distributions and solving the momentum and moment of momentum balance equations in periodic media are determined by using a Fast Fourier Transform spectral method. Here, the convoluted cross-moduli bring the following results: (i) Nonlocal stresses and couple stresses oppose their local counterparts in the defects core regions, playing the role of restoring forces and possibly ensuring spatio-temporal stability of the simulated defects, (ii) The couple stress fields are strongly affected by nonlocality. Such effects favor the stability of the simulated grain boundaries and allow investigating their elastic interactions with extrinsic defects, (iii) Driving forces inducing grain growth or refinement derive from the self-stress and couple stress fields of grain boundaries in nanocrystalline configurations.

Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors

CERN Document Server

Vanderschaeve, G; Insa, P D T; Caillard, D

2000-01-01

TEM in situ straining experiments provide a unique way to investigate in real time the behaviour of individual dislocations under applied stress. The results obtained on a variety of semiconductors are presented: numerous dislocation sources are observed which makes it possible to measure the dislocation velocity as a function of different physical parameters (local shear stress, temperature, dislocation character, length of the moving dislocation, ...). The experimental results are consistent with a dislocation glide governed by the Peierls mechanism, even for II-VI compounds which have a significant degree of ionic character. For compounds, a linear dependence of the dislocation velocity on the length of the moving segment is noticed, whereas for elemental semiconductors a transition between a length-dependent and a length-independent velocity regime is observed. Analysed in the framework of the kink diffusion model (Hirth and Lothe theory), these results allow an estimation of the kink formation and migrat...

Dislocation dynamics modelling of the ductile-brittle-transition

International Nuclear Information System (INIS)

Hennecke, Thomas; Haehner, Peter

2009-01-01

Many materials like silicon, tungsten or ferritic steels show a transition between high temperature ductile fracture with stable crack grow and high deformation energy absorption and low temperature brittle fracture in an unstable and low deformation mode, the ductile-brittle-transition. Especially in steels, the temperature transition is accompanied by a strong increase of the measured fracture toughness over a certain temperature range and strong scatter in the toughness data in this transition regime. The change in fracture modes is affected by dynamic interactions between dislocations and the inhomogeneous stress fields of notches and small cracks. In the present work a dislocation dynamics model for the ductile-brittle-transition is proposed, which takes those interactions into account. The model can explain an increase with temperature of apparent toughness in the quasi-brittle regime and different levels of scatter in the different temperature regimes. Furthermore it can predict changing failure sites in materials with heterogeneous microstructure. Based on the model, the effects of crack tip blunting, stress state, external strain rate and irradiation-induced changes in the plastic flow properties can be discussed.

Traumatic atlantooccipital dislocation injury in children.

Science.gov (United States)

Nichols, J; West, J S

1994-10-01

The tragedy of trauma turns into triumph when the surgery team members' efforts result in victory for the patient. Nowhere is this more true than in successful pediatric trauma care. Giving a child a second chance at life and the family an opportunity for a new beginning is the highest reward for the trauma team's years of professional training and practice. Traumatic atlantoocipital dislocation injury usually results in death, but recent neurosurgery trauma advances are increasing pediatric survival rates.

Dislocation kinetics and the acoustic-wave approximation for liquids

International Nuclear Information System (INIS)

Stout, R.B.

1983-03-01

A dislocation-dependent model for liquids describes the lattice deformation and the fluidity deformation as additive deformations. The lattice deformation represents distortions of an atom's potential energy structure and is a recoverable deformation response. The fluidity deformation represents discontinuous repositioning of atoms by dislocation kinetics in the lattice structure and is a nonrecoverable deformation response. From this model, one concludes that in liquids the acoustic-wave approximation is a description of a recoverable oscillation deformation that has dissipation because of dislocation kinetics. Other more-complex waves may exist, but such waves would rapidly disappear because of the small thermodynamic potential for dislocation kinetics in liquids

Evaluation of the mechanism and principles of management of temporomandibular joint dislocation. Systematic review of literature and a proposed new classification of temporomandibular joint dislocation.

Science.gov (United States)

Akinbami, Babatunde O

2011-06-15

Virtually all the articles in literature addressed only a specific type of dislocation. The aim of this review was to project a comprehensive understanding of the pathologic processes and management of all types of dislodgement of the head of the mandibular condyle from its normal position in the glenoid fossa. In addition, a new classification of temporomandibular joint dislocation was also proposed. A thorough computer literature search was done using the Medline, Cochrane library and Embase database. Key words like temporo-mandibular joint dislocation were used for the search. Additional manual search was done by going through published home-based and foreign articles. Case reports/series, and original articles that documented the type of dislocation, number of cases treated in the series and original articles. Treatment done and outcome of treatment were included in the study. A total of 128 articles were reviewed out which 79 were found relevant. Of these, 26 were case reports, 17 were case series and 36 were original articles. 79 cases were acute dislocations, 35 cases were chronic protracted TMJ dislocations and 311 cases were chronic recurrent TMJ dislocations. Etiology was predominantly trauma in 60% of cases and other causes contributed about 40%. Of all the cases reviewed, only 4 were unilateral dislocation. Various treatment modalities are outlined in this report as indicated for each type of dislocation. The more complex and invasive method of treatment may not necessarily offer the best option and outcome of treatment, therefore conservative approaches should be exhausted and utilized appropriately before adopting the more invasive surgical techniques.

Cyclic saturation dislocation structures of multiple-slip-oriented copper single crystals

International Nuclear Information System (INIS)

Li, X.W.; Chinese Academy of Sciences, Shenyang; Umakoshi, Y.; Li, S.X.; Wang, Z.G.

2001-01-01

The dislocation structures of [011] and [ anti 111] multiple-slip-oriented Cu single crystals cyclically saturated at constant plastic strain amplitudes were investigated through transmission electron microscopy. The results obtained on [001] multiple-slip-oriented Cu single crystals were also included for summarization. Unlike the case for single-slip-oriented Cu single crystals, the crystallographic orientation has a strong effect on the saturation dislocation structure in these three multiple-slip-oriented crystals. For the [011] crystal, different dislocation patterns such as veins, PSB walls, labyrinths and PSB ladders were observed. The formation of PSB ladders is believed to be a major reason for the existence of a plateau region in the cyclic stress-strain (CSS) curve for the [011] crystal. The cyclic saturation dislocation structure of a [ anti 111] crystal cycled at a low applied strain amplitude γ pl of 2.0 x 10 -4 was found to consist of irregular cells, which would develop into a more regular arrangement (e. g. PSB ladder-like) and the scale of which tends to decrease with increasing γ pl . Finally, three kinds of representative micro-deformation mode were summarized and termed as labyrinth-mode (or [001]-mode), cell-mode (or [ anti 111]-mode) and PSB ladder-mode (or [011]-mode). (orig.)

Towards a quantification of stress corrosion mechanisms: numerical simulations of hydrogen-dislocations at the very crack tip

International Nuclear Information System (INIS)

Chateau, J.P.

1999-01-01

We discuss the respective roles played by anodic dissolution and hydrogen in SCC mechanisms of f.c.c. materials, by studying the fracture of copper in nitrite for which we compare the results with that previously obtained in 316L steel in hot chloride. It is surprising to note that even the crystallographies at the scale of the micron are different, the macroscopic inclination of the fracture surfaces are the same. In the case of 316L steel, the formation of strong pile-ups in the presence of hydrogen leads to a zigzag fracture along alternated slip planes in the most general case. In the absence of hydrogen, as in copper, this mechanism effectively disappears. Furthermore, numerical simulations of crack shielding by dislocations emitted on one plane predict the macroscopic inclination. It shows that it is due to the mere dissolution which confines slip activity at the very crack tip in f.c.c. materials. In order to quantify the mechanism involved in 316L steel, we developed simulations which numerically solve the coupled diffusion and elasticity equations for hydrogen in the presence of a crack and shielding dislocations. They reproduce the mechanisms of hydrogen segregation on edge dislocations and of a localised softening effect by decreasing pair interactions. These mechanisms lead to i) a localisation of hydrogen embrittlement along the activated slip planes, ii) an increase of the dislocation density in pile-ups, and iii) a decrease of the cross slip probability. These three factors enhance micro-fracture at the head of a pile-up, which is responsible of the zigzag fracture. Introducing the free surface effects for hydrogen, we point out a new mechanism: the inhibition of dislocation sources at the crack tip, which is relevant with the brittle fracture surfaces observed in some cases in 316L steel. The quantification of these different mechanisms allows to give a relation between the local fracture possibility and the macroscopic parameters. A general law for

Compound transstyloid, transscaphoid, perilunate fracture dislocation

Directory of Open Access Journals (Sweden)

Nadeem Ali

2013-01-01

Full Text Available Compound fracture dislocations of proximal carpal bones are very rare. We report a 26-year-old male, Defense personnel by profession, who sustained a compound Gustilo Anderson type IIIA transstyloid, transscaphoid, perilunate dislocation. The patient underwent primary proximal row carpectomy and stabilization with uni-planar, uni-lateral external fixator, and K-Wires. On follow-up after a year, the patient had almost negligible range of motion around wrist without any significant discomfort.

Dislocations and related defects in niobium oxide structures

Energy Technology Data Exchange (ETDEWEB)

Anderson, J S; Hutchinson, J L; Lincoln, F J [Oxford Univ. (UK). Inorganic Chemistry Lab.

1977-01-07

Lattice images of the niobium oxides, structures based on the linkage of octahedral groups in continuous networks, occasionally contain features recognizable as dislocations. Since lattice imaging enables the microstructure to be resolved in greater detail, at the level of local structural organization, it is possible to determine the configuration, and also to infer the chemical composition, of dislocated areas. By treating the niobium oxide 'block' structures as superstructures of the ReO/sub 3/ (DO/sub 9/) type, the topology of dislocations can be expressed by relations between the insertion (or deletion) of one or more half-planes of cations, or of oxygen atoms only, changes in the number of crystallographic shear plane interfaces between blocks or columns, changes in (idealized) dimensions and any requisite distortion in the third dimension. Mapping the structure around a dislocation, from the lattice image, is directly equivalent to plotting the Burgers' circuit. In this way, the precise nature of a dislocating perturbation and its implications for the local chemical composition of the crystal can be directly identified. The method is exemplified by analysis of dislocations and of related extended defects of several types, associated with twinning phenomena, semicoherent intergrowth between different ReO/sub 3/-type superstructures and arrays building up a low angle boundary. The essential features of the analysis are not restricted to structures of the niobium oxide type, but can be extended to other types of polyhedron networks.

Hazy increased density in diffuse lung disease

International Nuclear Information System (INIS)

Klein, J.S.; Webb, W.R.; Gamsu, G.; Warnock, M.; Park, C.K.

1989-01-01

In order to determine the significance of ground glass density on high-resolution CT scans of patients with idiopathic pulmonary fibrosis and other lung disorders, the authors have reviewed 200 high-resolution CT studies and found 50 cases demonstrating areas of hazy increased lung density. Disease entities most often associated with this finding included DIP, UIP, alveolar proteinosis, sarcoidosis, and bronchiolitis obliterans/ organizing pneumonia. Pathologic examination revealed either cellular or fluid material lining terminal air spaces, often associated with alveolar wall infiltration and an absence of fibrosis. Gallium scans and bronchoalveolar lavage in some cases showed active inflammation Follow-up high-resolution CT studies in 10 patients showed either change or resolution of the hazy densities, confirming the presence of a reversible parenchymal lesion

Influence of Elastic Anisotropy on Extended Dislocation Nodes

Energy Technology Data Exchange (ETDEWEB)

Pettersson, B

1971-09-15

The interaction forces between the partial dislocations forming an extended dislocation node are calculated using elasticity theory for anisotropic media.s are carried out for nodes of screw, edge and mixed character in Ag, which has an anisotropy ratio A equal to 3, and in a hypothetic material with A = 1 and the same shear modulus as Ag. The results are compared with three previous theories using isotropic elasticity theory. As expected, in Ag the influence of anisotropy is of the same order as the uncertainty due to the dislocation core energy

Dislocation loops and their depth profiles in He[sup +] and D[sup +] ion irradiated nickel

Energy Technology Data Exchange (ETDEWEB)

Niwase, K [Dept. of Physics, Hyogo Univ. of Teacher Education, Yashiro (Japan); Ezawa, T [Dept. of Material Physics, Faculty of Engineering Science, Osaka Univ., Toyonaka (Japan); Tanabe, T [Dept. of Nuclear Engineering, Faculty of Engineering, Osaka Univ., Suita (Japan); Kiritani, M [Dept. of Nuclear Engineering, School of Engineering, Nagoya Univ. (Japan); Fujita, F E [Dept. of Material Physics, Faculty of Engineering Science, Osaka Univ., Toyonaka (Japan)

1993-07-01

Effects of implanted deuterium and helium on the formation of dislocation loops in Ni have been systematically investigated in terms of the irradiation temperature and dose by means of transmission electron microscopy. Significant enhancement of loop formation is observed only for He[sup +] irradiation. The number density of loops at 200 C for He[sup +] irradiation is about one order of magnitude higher than that of D[sup +] irradiation and the difference increases at higher temperatures. Significant decrease in the density occurs at about 300 C for D[sup +] irradiation, but it appears at about 600 C for He[sup +] irradiation. Below 200 C, continuous nucleation of loops is observed only for He[sup +] irradiation. The change in the loop depth distribution suggests that the nucleation of loops for He[sup +] irradiation is enhanced by some defects with a low mobility such as small He-vacancy complexes. The significant decrease in the loop density above 600 C is explained by the decrease in the concentration of the small He-vacancy complexes due to their absorption by large cavities or their escape to the specimen surface. (orig.)

3D DD modelling of the prismatic loops and dislocations interaction in pure iron

International Nuclear Information System (INIS)

Novokshanov, R.; Roberts, S.

2007-01-01

Full text of publication follows: Neutron irradiation can increase the yield stress and reduce the ductility of metals. These effects are mainly caused by the interaction of dislocations with damage produced during irradiation. In iron irradiated with fast neutrons the damage takes the form of 1/2 and 1/2 prismatic dislocation loops (the size of the loops varies from 2 nm to 20 nm depending on the dose of irradiation). The interaction between such loops and dislocations is the subject of this research. 3D dislocation dynamics simulations have been carried out to model the interaction between prismatic loops and dis- locations in pure iron subject to uniaxial loading conditions. The primary goal was to understand the mechanism of interaction of a a/2 loop and a mobile dislocation. The simulations have shown a complicated 3D interaction resulting in either bowing around an obstacle (prismatic loop, Orowan mechanism) or cutting it through, carrying part of the loop away and leaving the other part behind. Cross-slip can be important, in a manner depending on the type of mobile dislocation, size, type and orientation of prismatic loop. The secondary goal was to investigate the dependence of the critical stress needed for dislocations to overcome the obstacles as a function of: size of loops, initial separation between loops, the direction of motion of the mobile dislocation and its type (pure edge or screw), and type of a loop (interstitial or vacancy). Many different configurations have been simulated. The size of the loops was varied from 10 nm to 100 nm; the separation between the loops in a row was varied from one to four loop diameters; the distance between the glide plane and the loop plane was varied from 0 to 20 nm. The glide plane of the mobile dislocation was either perpendicular to and or inclined to the loop plane. The results show a strong dependence of the critical stress on the size of the loops and the initial configuration. (authors)