The Pierce diode with an external circuit. I. Oscillations about nonuniform equilibria

International Nuclear Information System (INIS)

Lawson, W.S.

1989-01-01

The nonuniform (nonlinear) equilibria of the classical (short circuit) Pierce diode and the extended (series RLC external circuit) Pierce diode are described, and the spectrum of oscillations (stable and unstable) about these equilibria are worked out. It is found that only the external capacitance alters the equilibria, though all elements alter the spectrum. In particular, the introduction of an external capacitor destabilizes some equilibria that are marginally stable without the capacitor. Computer simulations are performed to test the theoretical predictions for the case of an external capacitor only. It is found that most equilibria are correctly predicted by theory, but that the continuous set of equilibria of the classical Pierce diode at Pierce parameters (α=ω/sub pL//v 0 ) that are multiples of 2π are not observed. This appears to be a failure of the simulation method under the rather singular conditions rather than a failure of the theory

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

International Nuclear Information System (INIS)

M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

2005-01-01

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

Voltage-Mode All-Pass Filters Including Minimum Component Count Circuits

Directory of Open Access Journals (Sweden)

Sudhanshu Maheshwari

2007-01-01

Full Text Available This paper presents two new first-order voltage-mode all-pass filters using a single-current differencing buffered amplifier and four passive components. Each circuit is compatible to a current-controlled current differencing buffered amplifier with only two passive elements, thus resulting in two more circuits, which employ a capacitor, a resistor, and an active element, thus using a minimum of active and passive component counts. The proposed circuits possess low output impedance, and hence can be easily cascaded for voltage-mode systems. PSPICE simulation results are given to confirm the theory.

Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

Science.gov (United States)

Talla Mbé, Jimmi Hervé; Woafo, Paul

2018-03-01

We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

Science.gov (United States)

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Microphone triggering circuit for elimination of mechanically induced frequency-jitter in diode laser spectrometers: implications for quantitative analysis.

Science.gov (United States)

Sams, R L; Fried, A

1987-09-01

An electronic timing circuit using a microphone triggering device has been developed for elimination of mechanically induced frequency-jitter in diode laser spectrometers employing closed-cycle refrigerators. Mechanical compressor piston shocks are detected by the microphone and actuate an electronic circuit which ultimately interrupts data acquisition until the mechanical vibrations are completely quenched. In this way, laser sweeps contaminated by compressor frequency-jitter are not co-averaged. Employing this circuit, measured linewidths were in better agreement with that calculated. The importance of eliminating this mechanically induced frequency-jitter when carrying out quantitative diode laser measurements is further discussed.

Modelling of optoelectronic circuits based on resonant tunneling diodes

Science.gov (United States)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Circuit for Communication over DC Power Line Using High Temperature Electronics

Science.gov (United States)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2014-01-01

A high temperature communications circuit includes a power conductor for concurrently conducting electrical energy for powering circuit components and transmitting a modulated data signal, and a demodulator for demodulating the data signal and generating a serial bit stream based on the data signal. The demodulator includes an absolute value amplifier for conditionally inverting or conditionally passing a signal applied to the absolute value amplifier. The absolute value amplifier utilizes no diodes to control the conditional inversion or passing of the signal applied to the absolute value amplifier.

Intermittency-induced criticality in a resistor-inductor-diode circuit.

Science.gov (United States)

Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

2017-04-01

The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

Power ion beam production in a magnetic-insulated diode placed in a circuit with an inductive storage with a plasmoerosion circuit breaker

International Nuclear Information System (INIS)

Anan'in, P.S.; Karpov, V.B.; Krasik, Ya.E.; Paul', E.A.

1991-01-01

Consideration is given to results of experimental studies of modes of operation of plasma current breaker and magnetic insulated diode, placed parallel in a circuit with inductive storage and microsecond generator, as well as parameters of high-power ion beam, generated in gas-filled diode. Magnetic field of mirror configuration, which enabled to locate the gas-filled diode dose to breaking region was used for decrease of electrodynamic plasma transfer. It is shown that time delay (of the order of ten and more) of power maximum in gas-filled diode with respect to power maximum in plasma breaker is observed when using passive plasma source on anode

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications

KAUST Repository

Wang, Song; Cottrill, Anton L.; Kunai, Yuichiro; Toland, Aubrey R.; Liu, Pingwei; Wang, Wen-Jun; Strano, Michael S.

2017-01-01

rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous

670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

Science.gov (United States)

Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta;

A fast automatic power control circuit for a small form-factor pluggable laser diode drive

Energy Technology Data Exchange (ETDEWEB)

Wang Huan; Wang Zhigong; Xu Jian; Miao Peng; Li Wei [Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China); Luo Yin; Yang Siyong, E-mail: wanghuan@seu.edu.c [Jiangsu Sino-Chip OE-IC Co. Ltd, Nanjing 210016 (China)

2010-06-15

A fast automatic power control (APC) circuit for a laser diode driver (LDD) has been implemented in a 0.6-{mu}m BiCMOS process. The APC circuit adopts double-loops and variable-bandwidth techniques to achieve a turn-on time of < 400 {mu}s for most kinds of TOSAs. Thus, it meets the small form-factor pluggable (SFP) agreement. Such techniques make a good tradeoff between stability, accuracy, turn-on time, noise and convenience. The measured results indicate that the APC circuit is suitable for SFP LDD. (semiconductor integrated circuits)

Circuit simulation model multi-quantum well laser diodes inducing transport and capture/escape

International Nuclear Information System (INIS)

Zhuber-Okrog, K.

1996-04-01

This work describes the development of world's first circuit simulation model for multi-quantum well (MQW) semiconductor lasers comprising caier transport and capture/escape effects. This model can be seen as the application of a new semiconductor device simulator for quasineutral structures including MQW layers with an extension for simple single mode modeling of optical behavior. It is implemented in a circuit simulation program. The model is applied to Fabry-Perot laser diodes and compared to measured data. (author)

Compact sub-nanosecond pulse seed source with diode laser driven by a high-speed circuit

Science.gov (United States)

Wang, Xiaoqian; Wang, Bo; Wang, Junhua; Cheng, Wenyong

2018-06-01

A compact sub-nanosecond pulse seed source with 1550 nm diode laser (DL) was obtained by employing a high-speed circuit. The circuit mainly consisted of a short pulse generator and a short pulse driver. The short pulse generator, making up of a complex programmable logic device (CPLD), a level translator, two programmable delay chips and an AND gate chip, output a triggering signal to control metal-oxide-semiconductor field-effect transistor (MOSFET) switch of the short pulse driver. The MOSFET switch with fast rising time and falling time both shorter than 1 ns drove the DL to emit short optical pulses. Performances of the pulse seed source were tested. The results showed that continuously adjustable repetition frequency ranging from 500 kHz to 100 MHz and pulse duration in the range of 538 ps to 10 ns were obtained, respectively. 537 μW output was obtained at the highest repetition frequency of 100 MHz with the shortest pulse duration of 538 ps. These seed pulses were injected into an fiber amplifier, and no optical pulse distortions were found.

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications

KAUST Repository

Wang, Song

2017-05-10

Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young\\'s moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell–Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

A Hybrid Circuit for Spoof Surface Plasmons and Spatial Waveguide Modes to Reach Controllable Band-Pass Filters.

Science.gov (United States)

Zhang, Qian; Zhang, Hao Chi; Wu, Han; Cui, Tie Jun

2015-11-10

We propose a hybrid circuit for spoof surface plasmon polaritons (SPPs) and spatial waveguide modes to develop new microwave devices. The hybrid circuit includes a spoof SPP waveguide made of two anti-symmetric corrugated metallic strips and a traditional substrate integrated waveguide (SIW). From dispersion relations, we show that the electromagnetic waves only can propagate through the hybrid circuit when the operating frequency is less than the cut-off frequency of the SPP waveguide and greater than the cut-off frequency of SIW, generating efficient band-pass filters. We demonstrate that the pass band is controllable in a large range by designing the geometrical parameters of SPP waveguide and SIW. Full-wave simulations are provided to show the large adjustability of filters, including ultra wideband and narrowband filters. We fabricate a sample of the new hybrid device in the microwave frequencies, and measurement results have excellent agreements to numerical simulations, demonstrating excellent filtering characteristics such as low loss, high efficiency, and good square ratio. The proposed hybrid circuit gives important potential to accelerate the development of plasmonic integrated functional devices and circuits in both microwave and terahertz frequencies.

Radiation-sensitive switching circuits

Energy Technology Data Exchange (ETDEWEB)

Moore, J.H.; Cockshott, C.P.

1976-03-16

A radiation-sensitive switching circuit includes a light emitting diode which from time to time illuminates a photo-transistor, the photo-transistor serving when its output reaches a predetermined value to operate a trigger circuit. In order to allow for aging of the components, the current flow through the diode is increased when the output from the transistor falls below a known level. Conveniently, this is achieved by having a transistor in parallel with the diode, and turning the transistor off when the output from the phototransistor becomes too low. The circuit is designed to control the ignition system in an automobile engine.

Arbitrary waveform generator to improve laser diode driver performance

Science.gov (United States)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Study on boiling heat transfer from diode elements in an integrated circuit chip

Energy Technology Data Exchange (ETDEWEB)

Hijikata, Kunio; Nagasaki, Takao; Kurata, Naoki (Tokyo Institute of Technology Faculty of Engineering (Japan))

1989-02-25

By temperature measurement of elements in boiling experiments with diodes in an integrated circuit (IC) chip, characteristics of boiling heat transfer from tiny heat generating elements in an IC chip and thermal transfer characteristics of multiple heating elements adjoining positioned were studied. The Package of an IC was removed by acid to expose the IC chip. Electricity is applied to the diode in the IC to study the heat transfer properties. The heat transfer rate from a tiny heating element on an IC is greater than that from the conventional continual heated surface. In the case of heat generation by two adjoining elements, the relationship between the total amount of heat and the temperature of elements shows the same characteristics as in the case with a single element. The boiling heat transfer properties of an element in an IC chip are influenced by such microstructure surrounding the element as the pattern of wiring. Heat transfer increases with the decreasing size of the heating element by the heat transfer to the substrate beneath the element. 10 refs., 15 figs.

Unstable oscillators based hyperchaotic circuit

DEFF Research Database (Denmark)

Murali, K.; Tamasevicius, A.; G. Mykolaitis, A.

1999-01-01

A simple 4th order hyperchaotic circuit with unstable oscillators is described. The circuit contains two negative impedance converters, two inductors, two capacitors, a linear resistor and a diode. The Lyapunov exponents are presented to confirm hyperchaotic nature of the oscillations in the circ...... in the circuit. The performance of the circuit is investigated by means of numerical integration of appropriate differential equations, PSPICE simulations, and hardware experiment.......A simple 4th order hyperchaotic circuit with unstable oscillators is described. The circuit contains two negative impedance converters, two inductors, two capacitors, a linear resistor and a diode. The Lyapunov exponents are presented to confirm hyperchaotic nature of the oscillations...

Single-frequency blue light generation by single-pass sum-frequency generation in a coupled ring cavity tapered laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Petersen, Paul Michael

2013-01-01

A generic approach for generation of tunable single frequency light is presented. 340 mW of near diffraction limited, single-frequency, and tunable blue light around 459 nm is generated by sum-frequency generation (SFG) between two tunable tapered diode lasers. One diode laser is operated in a ring...... cavity and another tapered diode laser is single-passed through a nonlinear crystal which is contained in the coupled ring cavity. Using this method, the single-pass conversion efficiency is more than 25%. In contrast to SFG in an external cavity, the system is entirely self-stabilized with no electronic...

Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

International Nuclear Information System (INIS)

Yun, J; Shim, J-I; Shin, D-S

2013-01-01

We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

KAUST Repository

Zou, Jianping; Zhang, Kang; Li, Jingqi; Zhao, Yongbiao; Wang, Yilei; Pillai, Suresh Kumar Raman; Volkan Demir, Hilmi; Sun, Xiaowei; Chan-Park, Mary B.; Zhang, Qing

2015-01-01

Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

KAUST Repository

Zou, Jianping

2015-06-29

Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

A Novel LTPS-TFT Pixel Circuit to Compensate the Electronic Degradation for Active-Matrix Organic Light-Emitting Diode Displays

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2013-01-01

Full Text Available A novel pixel driving circuit for active-matrix organic light-emitting diode (AMOLED displays with low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs is studied. The proposed compensation pixel circuit is driven by voltage programming scheme, which is composed of five TFTs and one capacitor, and has been certified to provide uniform output current by the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The results of simulation show excellent performance, such as the low average error rate of OLED current variation (<0.5% and the low average nonuniformity of OLED current variation (<0.8% while the shift of threshold voltage of the driving poly-Si TFT and the OLED are both in the worst case ( V for TFT and  V for OLED. The proposed pixel circuit shows high immunity to the threshold voltage deviation of both the driving poly-Si TFT and the OLED.

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

Adjustable direct current and pulsed circuit fault current limiter

Science.gov (United States)

Boenig, Heinrich J.; Schillig, Josef B.

2003-09-23

A fault current limiting system for direct current circuits and for pulsed power circuit. In the circuits, a current source biases a diode that is in series with the circuits' transmission line. If fault current in a circuit exceeds current from the current source biasing the diode open, the diode will cease conducting and route the fault current through the current source and an inductor. This limits the rate of rise and the peak value of the fault current.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

International Nuclear Information System (INIS)

Özaydın, C.; Güllü, Ö.; Pakma, O.; Ilhan, S.; Akkılıç, K.

2016-01-01

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ_b) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

Energy Technology Data Exchange (ETDEWEB)

Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

Coexistence of multiple attractors and crisis route to chaos in a novel memristive diode bidge-based Jerk circuit

International Nuclear Information System (INIS)

Njitacke, Z.T.; Kengne, J.; Fotsin, H.B.; Negou, A. Nguomkam; Tchiotsop, D.

2016-01-01

In the present paper, a new memristor based oscillator is obtained from the autonomous Jerk circuit [Kengne et al., Nonlinear Dynamics (2016) 83: 751̶765] by substituting the nonlinear element of the original circuit with a first order memristive diode bridge. The model is described by a continuous time four-dimensional autonomous system with smooth nonlinearities. Various nonlinear analysis tools such as phase portraits, time series, bifurcation diagrams, Poincaré section and the spectrum of Lyapunov exponents are exploited to characterize different scenarios to chaos in the novel circuit. It is found that the system experiences period doubling and crisis routes to chaos. One of the major results of this work is the finding of a window in the parameters’ space in which the circuit develops hysteretic behaviors characterized by the coexistence of four different (periodic and chaotic) attractors for the same values of the system parameters. Basins of attractions of various coexisting attractors are plotted showing complex basin boundaries. As far as the authors’ knowledge goes, the novel memristive jerk circuit represents one of the simplest electrical circuits (no analog multiplier chip is involved) capable of four disconnected coexisting attractors reported to date. Both PSpice simulations of the nonlinear dynamics of the oscillator and laboratory experimental measurements are carried out to validate the theoretical analysis.

Logarithmic current-measuring transistor circuits

DEFF Research Database (Denmark)

Højberg, Kristian Søe

1967-01-01

Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

Zener Diode Compact Model Parameter Extraction Using Xyce-Dakota Optimization.

Energy Technology Data Exchange (ETDEWEB)

Buchheit, Thomas E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wilcox, Ian Zachary [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandoval, Andrew J [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Reza, Shahed [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

This report presents a detailed process for compact model parameter extraction for DC circuit Zener diodes. Following the traditional approach of Zener diode parameter extraction, circuit model representation is defined and then used to capture the different operational regions of a real diode's electrical behavior. The circuit model contains 9 parameters represented by resistors and characteristic diodes as circuit model elements. The process of initial parameter extraction, the identification of parameter values for the circuit model elements, is presented in a way that isolates the dependencies between certain electrical parameters and highlights both the empirical nature of the extraction and portions of the real diode physical behavior which of the parameters are intended to represent. Optimization of the parameters, a necessary part of a robost parameter extraction process, is demonstrated using a 'Xyce-Dakota' workflow, discussed in more detail in the report. Among other realizations during this systematic approach of electrical model parameter extraction, non-physical solutions are possible and can be difficult to avoid because of the interdependencies between the different parameters. The process steps described are fairly general and can be leveraged for other types of semiconductor device model extractions. Also included in the report are recommendations for experiment setups for generating optimum dataset for model extraction and the Parameter Identification and Ranking Table (PIRT) for Zener diodes.

Power saving regulated light emitting diode circuit

International Nuclear Information System (INIS)

Haville, G. D.

1985-01-01

A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

Science.gov (United States)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Automatic circuit analysis based on mask information

International Nuclear Information System (INIS)

Preas, B.T.; Lindsay, B.W.; Gwyn, C.W.

1976-01-01

The Circuit Mask Translator (CMAT) code has been developed which converts integrated circuit mask information into a circuit schematic. Logical operations, pattern recognition, and special functions are used to identify and interconnect diodes, transistors, capacitors, and resistances. The circuit topology provided by the translator is compatible with the input required for a circuit analysis program

Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.

Science.gov (United States)

Liu, Tingting; Zhao, Jianwen; Xu, Weiwei; Dou, Junyan; Zhao, Xinluo; Deng, Wei; Wei, Changting; Xu, Wenya; Guo, Wenrui; Su, Wenming; Jie, Jiansheng; Cui, Zheng

2018-01-03

Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec -1 and ON/OFF ratio of 10 6 , which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10 5 ) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl [Inha University, Incheon (Korea, Republic of)

2014-11-15

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

International Nuclear Information System (INIS)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl

2014-01-01

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Electromagnetic wave analogue of electronic diode

OpenAIRE

Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

2010-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

Electronic devices and circuits

CERN Document Server

Pridham, Gordon John

1968-01-01

Electronic Devices and Circuits, Volume 1 deals with the design and applications of electronic devices and circuits such as passive components, diodes, triodes and transistors, rectification and power supplies, amplifying circuits, electronic instruments, and oscillators. These topics are supported with introductory network theory and physics. This volume is comprised of nine chapters and begins by explaining the operation of resistive, inductive, and capacitive elements in direct and alternating current circuits. The theory for some of the expressions quoted in later chapters is presented. Th

Equilibrium double layers in extended Pierce diodes

International Nuclear Information System (INIS)

Ciubotariu-Jassy, C.I.

1992-01-01

The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs

Highly efficient single-pass sum frequency generation by cascaded nonlinear crystals

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Andersen, Peter E.; Jensen, Ole Bjarlin

2015-01-01

, despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique......The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation...... is generally applicable and can be applied to any combination of fundamental wavelengths and nonlinear crystals....

Logarithmic circuit with wide dynamic range

Science.gov (United States)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

Cern DD4424 ROM Diode Matrix

CERN Multimedia

A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

A Diode Matrix model M792

CERN Multimedia

A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

Principles of transistor circuits introduction to the design of amplifiers, receivers and digital circuits

CERN Document Server

Amos, S W

2013-01-01

For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand an

A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

KAUST Repository

Gutiérrez-Heredia, Gerardo

2010-10-04

We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas \\'parylene only\\' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

KAUST Repository

Gutié rrez-Heredia, Gerardo; Gonzá lez, Luis A.; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

2010-01-01

We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

Extraction of diode parameters of silicon solar cells under high illumination conditions

International Nuclear Information System (INIS)

Khan, Firoz; Baek, Seong-Ho; Park, Yiseul; Kim, Jae Hyun

2013-01-01

Graphical abstract: We have developed an analytical method to determine the diode parameters of concentrator solar cells under high illumination conditions. The determined values of diode parameters have been used to compute the theoretical values of performance parameters. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with their experimental values in the temperature range 298–323 K. Highlights: • An analytical method to extract the diode parameters of concentrated Si solar cells. • This method uses single I–V curve under high illumination conditions. • The theoretical values of performance parameters have been computed. • Theoretical values of parameters matched within 2% discrepancy limit. • This method gives best results among the methods used in this work. - Abstract: An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J–V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J–V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J–V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J–V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator

Rectification of electronic heat current by a hybrid thermal diode.

Science.gov (United States)

Martínez-Pérez, Maria José; Fornieri, Antonio; Giazotto, Francesco

2015-04-01

Thermal diodes--devices that allow heat to flow preferentially in one direction--are one of the key tools for the implementation of solid-state thermal circuits. These would find application in many fields of nanoscience, including cooling, energy harvesting, thermal isolation, radiation detection and quantum information, or in emerging fields such as phononics and coherent caloritronics. However, both in terms of phononic and electronic heat conduction (the latter being the focus of this work), their experimental realization remains very challenging. A highly efficient thermal diode should provide a difference of at least one order of magnitude between the heat current transmitted in the forward temperature (T) bias configuration (Jfw) and that generated with T-bias reversal (Jrev), leading to ℛ = Jfw/Jrev ≫ 1 or ≪ 1. So far, ℛ ≈ 1.07-1.4 has been reported in phononic devices, and ℛ ≈ 1.1 has been obtained with a quantum-dot electronic thermal rectifier at cryogenic temperatures. Here, we show that unprecedentedly high ratios of ℛ ≈ 140 can be achieved in a hybrid device combining normal metals tunnel-coupled to superconductors. Our approach provides a high-performance realization of a thermal diode for electronic heat current that could be successfully implemented in true low-temperature solid-state thermal circuits.

Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

International Nuclear Information System (INIS)

Pardo, D; Grajal, J

2015-01-01

This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology. (paper)

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Board-to-Board Free-Space Optical Interconnections Passing through Boards for a Bookshelf-Assembled Terabit-Per-Second-Class ATM Switch.

Science.gov (United States)

Hirabayashi, K; Yamamoto, T; Matsuo, S; Hino, S

1998-05-10

We propose free-space optical interconnections for a bookshelf-assembled terabit-per-second-class ATM switch. Thousands of arrayed optical beams, each having a rate of a few gigabits per second, propagate vertically to printed circuit boards, passing through some boards, and are connected to arbitrary transmitters and receivers on boards by polarization controllers and prism arrays. We describe a preliminary experiment using a 1-mm-pitch 2 x 2 beam-collimator array that uses vertical-cavity surface-emitting laser diodes. These optical interconnections can be made quite stable in terms of mechanical shock and temperature fluctuation by the attachment of reinforcing frames to the boards and use of an autoalignment system.

Bistability and hysteresis in the emergence of pulses in microstrip Gunn-diode circuits

Energy Technology Data Exchange (ETDEWEB)

Yurchenko, V. B., E-mail: v.yurchenko@nuim.ie [O. Ya. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine, 12 Proskura St., Kharkiv 61085 (Ukraine); Electrical and Electronic Engineering Department, Gazi University, Celal Bayar Bulvari, Ankara 06570 (Turkey); Yurchenko, L. V. [O. Ya. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine, 12 Proskura St., Kharkiv 61085 (Ukraine)

2014-12-15

We develop time-domain simulations of microwave and THz radiation sources built as arrays of active devices when the radiation wavelength is small as compared to spacing between electronic components. We pursue an approach when the system is represented by equations with time-delay feedback that could generate chaos and other forms of complicated dynamics. The approach simplifies simulations of ultra-wideband effects and exceeds capabilities of frequency-domain methods. As a model case, we simulated a microstrip circuit with Gunn diode and a remote resonator emitting the radiation towards infinity. We observed the emergence of either the continuous waves or the trains of high-frequency pulses depending on the bias conditions. We found bistability and hysteresis in the onset of different oscillation modes that depends on the way of driving the bias voltage into the domain of instability of the given system. The results would allow one to improve the design of THz radiation sources with time-delay coupling between components.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

Science.gov (United States)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

Linear variable voltage diode capacitor and adaptive matching networks

NARCIS (Netherlands)

Larson, L.E.; De Vreede, L.C.N.

2006-01-01

An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

SEMICONDUCTOR INTEGRATED CIRCUITS: A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth

Science.gov (United States)

Tao, Tong; Baoyong, Chi; Ziqiang, Wang; Ying, Zhang; Hanjun, Jiang; Zhihua, Wang

2010-05-01

A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth in 0.35 μm CMOS is presented. The circuit consists of two variable gain amplifiers (VGA) in cascade and a Gm-C elliptic low-pass filter (LPF). The filter-order and the cut-off frequency of the LPF can be reconfigured to satisfy the requirements of various applications. In order to achieve the optimum power consumption, the bandwidth of the VGAs can also be dynamically reconfigured and some Gm cells can be cut off in the given application. Simulation results show that the analog baseband circuit consumes 16.8 mW for WLAN, 8.9 mW for WCDMA and only 6.5 mW for Bluetooth, all with a 3 V power supply. The analog baseband circuit could provide -10 to +40 dB variable gain, third-order low pass filtering with 1 MHz cut-off frequency for Bluetooth, fourth-order low pass filtering with 2.2 MHz cut-off frequency for WCDMA, and fifth-order low pass filtering with 11 MHz cut-off frequency for WLAN, respectively.

Troubleshooting analog circuits

CERN Document Server

Pease, Robert A

1991-01-01

Troubleshooting Analog Circuits is a guidebook for solving product or process related problems in analog circuits. The book also provides advice in selecting equipment, preventing problems, and general tips. The coverage of the book includes the philosophy of troubleshooting; the modes of failure of various components; and preventive measures. The text also deals with the active components of analog circuits, including diodes and rectifiers, optically coupled devices, solar cells, and batteries. The book will be of great use to both students and practitioners of electronics engineering. Other

A circuital model of switching behaviour of 4H-SiC p+-n-n+ diodes valid at any current and temperature

International Nuclear Information System (INIS)

Bellone, S; Benedetto, L Di; Licciardo, G D; Corte, F Della

2014-01-01

A circuital model of 4H-SiC p + -n-n + diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparison with numerical simulations and experimental measurements.

Constant-current regulator improves tunnel diode threshold-detector performance

Science.gov (United States)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Simplified Chua's attractor via bridging a diode pair

Directory of Open Access Journals (Sweden)

Quan Xu

2015-04-01

Full Text Available In this paper, a simplified Chua's circuit is realised by bridging a diode pair between a passive LC (inductance and capacitance in parallel connection - LC oscillator and an active RC (resistance and capacitance in parallel connection - RC filter. The dynamical behaviours of the circuit are investigated by numerical simulations and verified by experimental measurements. It is found that the simplified Chua's circuit generates Chua's attractors similarly and demonstrates complex non-linear phenomena including coexisting bifurcation modes and coexisting attractors in particular.

Hyperchaotic circuit with damped harmonic oscillators

DEFF Research Database (Denmark)

Lindberg, Erik; Murali, K.; Tamasevicius, A.

2001-01-01

A simple fourth-order hyperchaotic circuit with damped harmonic oscillators is described. ANP3 and PSpice simulations including an eigenvalue study of the linearized Jacobian are presented together with a hardware implementation. The circuit contains two inductors with series resistance, two ideal...... capacitors and one nonlinear active conductor. The Lyapunov exponents are presented to confirm the hyperchaotic nature of the oscillations of the circuit. The nonlinear conductor is realized with a diode. A negative impedance converter and a linear resistor. The performance of the circuit is investigated...... by means of numerical integration of the appropriate differential equations....

Duffing–van der Pol oscillator type dynamics in Murali–Lakshmanan–Chua (MLC) circuit

International Nuclear Information System (INIS)

Srinivasan, K.; Chandrasekar, V.K.; Venkatesan, A.; Raja Mohamed, I.

2016-01-01

Highlights: • Proposed an electronic circuit with diode based nonlinear element equivalent to a well known Murali–Lakshmanan–Chua (MLC) circuit. • For chosen circuit parameters this circuit admits familiar MLC type attractor and also Duffing–van der Pol circuit type chaotic attractor. • The performance of the circuit is investigated by means of explicit laboratory experiments, numerical simulations and analytical studies. - Abstract: We have constructed a simple second-order dissipative nonautonomous circuit exhibiting ordered and chaotic behaviour. This circuit is the well known Murali–Lakshmanan–Chua(MLC) circuit but with diode based nonlinear element. For chosen circuit parameters this circuit admits familiar MLC type attractor and also Duffing–van der Pol circuit type chaotic attractors. It is interesting to note that depending upon the circuit parameters the circuit shows both period doubling route to chaos and quasiperiodic route to chaos. In our study we have constructed two-parameter bifurcation diagrams in the forcing amplitude–frequency plane, one parameter bifurcation diagrams, Lyapunov exponents, 0–1 test and phase portrait. The performance of the circuit is investigated by means of laboratory experiments, numerical integration of appropriate mathematical model and explicit analytic studies.

Device, system and method for a sensing electrical circuit

Science.gov (United States)

Vranish, John M. (Inventor)

2009-01-01

The invention relates to a driven ground electrical circuit. A driven ground is a current-measuring ground termination to an electrical circuit with the current measured as a vector with amplification. The driven ground module may include an electric potential source V.sub.S driving an electric current through an impedance (load Z) to a driven ground. Voltage from the source V.sub.S excites the minus terminal of an operational amplifier inside the driven ground which, in turn, may react by generating an equal and opposite voltage to drive the net potential to approximately zero (effectively ground). A driven ground may also be a means of passing information via the current passing through one grounded circuit to another electronic circuit as input. It may ground one circuit, amplify the information carried in its current and pass this information on as input to the next circuit.

Electromagnetic wave analogue of an electronic diode

International Nuclear Information System (INIS)

Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

2011-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

Vertically integrated circuit development at Fermilab for detectors

International Nuclear Information System (INIS)

Yarema, R; Deptuch, G; Hoff, J; Khalid, F; Lipton, R; Shenai, A; Trimpl, M; Zimmerman, T

2013-01-01

Today vertically integrated circuits, (a.k.a. 3D integrated circuits) is a popular topic in many trade journals. The many advantages of these circuits have been described such as higher speed due to shorter trace lenghts, the ability to reduce cross talk by placing analog and digital circuits on different levels, higher circuit density without the going to smaller feature sizes, lower interconnect capacitance leading to lower power, reduced chip size, and different processing for the various layers to optimize performance. There are some added advantages specifically for MAPS (Monolithic Active Pixel Sensors) in High Energy Physics: four side buttable pixel arrays, 100% diode fill factor, the ability to move PMOS transistors out of the diode sensing layer, and a increase in channel density. Fermilab began investigating 3D circuits in 2006. Many different bonding processes have been described for fabricating 3D circuits [1]. Fermilab has used three different processes to fabricate several circuits for specific applications in High Energy Physics and X-ray imaging. This paper covers some of the early 3D work at Fermilab and then moves to more recent activities. The major processes we have used are discussed and some of the problems encountered are described. An overview of pertinent 3D circuit designs is presented along with test results thus far.

Zener diode controls switching of large direct currents

Science.gov (United States)

1965-01-01

High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

Radiation-sensitive switching circuits

Energy Technology Data Exchange (ETDEWEB)

Moore, J.H.; Cockshott, C.P.

1976-03-16

A radiation-sensitive switching circuit has a light emitting diode which supplies light to a photo-transistor, the light being interrupted from time to time. When the photo-transistor is illuminated, current builds up and when this current reaches a predetermined value, a trigger circuit changes state. The peak output of the photo-transistor is measured and the trigger circuit is arranged to change state when the output of the device is a set proportion of the peak output, so as to allow for aging of the components. The circuit is designed to control the ignition system in an automobile engine.

Realisation of low-voltage square-root-domain all-pass filters

Directory of Open Access Journals (Sweden)

Farooq A. Khanday

2013-10-01

Full Text Available Novel l ow-voltage first-order and second-order square-root-domain all-pass filters derived systematically by means of transfer function decomposition and state -space synthesis techniques are proposed. The employment of only a few geometric-mean cells and grounded capacitors permits the circuits to absorb shunt parasitic capacitances, which is desirable for production in monolithic form . The circuits enjoy the features of electronic adjustment of frequency characteristics, wider dynamic range and low-voltage environment operation. The filters are employed to design high-order all-pass filters using cascade approach. First-order low-pass and second-order band-pass filters, being the inherited building blocks of the proposed low-order all-pass filters are also discussed. The behaviour of the filters is evaluated through simulations using Taiwan semiconductor manufacturing company 0.25 μm level-3 complementary metal oxide semiconductor process parameters, where the most important performance factors are considered.

Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

Science.gov (United States)

Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

2016-02-01

Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

Push-pull converter with energy saving circuit for protecting switching transistors from peak power stress

Science.gov (United States)

Mclyman, W. T. (Inventor)

1981-01-01

In a push-pull converter, switching transistors are protected from peak power stresses by a separate snubber circuit in parallel with each comprising a capacitor and an inductor in series, and a diode in parallel with the inductor. The diode is connected to conduct current of the same polarity as the base-emitter juction of the transistor so that energy stored in the capacitor while the transistor is switched off, to protect it against peak power stress, discharges through the inductor when the transistor is turned on, and after the capacitor is discharges through the diode. To return this energy to the power supply, or to utilize this energy in some external circuit, the inductor may be replaced by a transformer having its secondary winding connected to the power supply or to the external circuit.

The 1/f noise in a p-i-n diode and in a diode laser below threshold

NARCIS (Netherlands)

Fronen, R.J.; Hooge, F.N.

1991-01-01

--A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result

Improved Short-Circuit Protection for Power Cells in Series

Science.gov (United States)

Davies, Francis

2008-01-01

A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

Passivation of organic light emitting diode anode grid lines by pulsed Joule heating

NARCIS (Netherlands)

Janka, M.; Gierth, R.; Rubingh, J.E.; Abendroth, M.; Eggert, M.; Moet, D.J.D.; Lupo, D.

2015-01-01

We report the self-aligned passivation of a current distribution grid for an organic light emitting diode (OLED) anode using a pulsed Joule heating method to align the passivation layer accurately on the metal grid. This method involves passing an electric current through the grid to cure a polymer

Low-threshold amplitude discriminator circuit with tunnel diode and two transistors in differential connection

International Nuclear Information System (INIS)

Ryba, J.; Volny, J.

1973-01-01

The connection is designed of a low-threshold amplitude discriminator and a tunnel diode with two transistors in differential connection. The discriminator is by its simple connection, its low consumption and high temperature stability suitable especially for portable radiation detectors. The tunnel diode is connected by one pole to a collector clamp and by the other to the supply voltage. A suitable resistor is connected in parallel with the tunnel diode to meet demands for higher sensitivity. (Z.S.)

The resolving limit of a three-diode coincidence circuit; Limite de resolution d'un circuit de coincidence a trois diodes; Predel razreshayushchej sposobnosti trekhdiodnoj skhemy sovpadeniya; Poder de resolucion de un circuito de coincidencia de tres diodos

Energy Technology Data Exchange (ETDEWEB)

De Vries, H [University of Marburg, Marburg, Federal Republic of Germany (Germany)

1962-04-15

To investigate the resolving limit of a three-diode coincidence circuit according to De Benedetti and Richings, a complete coincidence device, consisting of diode stage, amplifier, amplitude discriminator, and Univibrator was tested with pulses of 10{sup -9} s risetime and 2 x 10{sup -9} s basal duration. The amplitudes were measured and also the integrals of the pulses received at the amplifier output as well as the resolution curve dependent on the interesting parameters-amplitude of the input pulses, input resistance of the amplifier, operating conditions of the diodes, etc. In order to explain the measurements certain investigations were made. The resolution curve of the coincidence device was deduced and the resolving time calculated. It was calculated how the diode stage, the amplifier noise and the matching of the amplifier to the diode stage determine the resolving time of the coincidence device. An analysis of the measurements and theoretical results yielded 10{sup -11} s as the lowest resolving time-limit which can be realized with a three-diode coincidence device under optimum conditions. The derivation of the resolution curve is given and the measurements are reported. It is shown that experimental and theoretical results are in good agreement. (author) [French] Pour etudier la limite de resolution d'un circuit de coincidence a trois diodes, selon la methode de De Benedetti et Richings, l'auteur a essaye un systeme a coincidences complet comportant un ensemble de diodes, un amplificateur, un selecteur d'amplitude et un univibrateur, pour des impulsions d'un temps de montee de 10{sup -9} s et d'une duree de base de 2 x 10{sup -9} s. Il a mesure les amplitudes et les integrales des impulsions recues a la sortie de l'amplificateur ainsi que la courbe de resolution en fonction des parametres interessants (amplitude des impulsions d'entree, resistance d'entree de l'amplificateur, regime de fonctionnement des diodes, etc.). L'auteur a cherche a expliquer les

Principles of transistor circuits introduction to the design of amplifiers, receivers and digital circuits

CERN Document Server

Amos, S W

2013-01-01

Principles of Transistor Circuits: Sixth Edition discusses the principles, concepts, and practices involved integrated circuits. The current edition includes up-to-date circuits, the section on thyristors has been revised to give more information on modern types, and dated information has been eliminated. The book covers related topics such as semiconductors and junction diodes; the principles behind transistors; and common amplifiers. The book also covers bias and DC stabilization; large-signal and small-signal AF amplifiers; DC and pulse amplifiers; sinusoidal oscillators; pulse and sawtooth

Belief propagation decoding of quantum channels by passing quantum messages

International Nuclear Information System (INIS)

Renes, Joseph M

2017-01-01

The belief propagation (BP) algorithm is a powerful tool in a wide range of disciplines from statistical physics to machine learning to computational biology, and is ubiquitous in decoding classical error-correcting codes. The algorithm works by passing messages between nodes of the factor graph associated with the code and enables efficient decoding of the channel, in some cases even up to the Shannon capacity. Here we construct the first BP algorithm which passes quantum messages on the factor graph and is capable of decoding the classical–quantum channel with pure state outputs. This gives explicit decoding circuits whose number of gates is quadratic in the code length. We also show that this decoder can be modified to work with polar codes for the pure state channel and as part of a decoder for transmitting quantum information over the amplitude damping channel. These represent the first explicit capacity-achieving decoders for non-Pauli channels. (fast track communication)

Belief propagation decoding of quantum channels by passing quantum messages

Science.gov (United States)

Renes, Joseph M.

2017-07-01

The belief propagation (BP) algorithm is a powerful tool in a wide range of disciplines from statistical physics to machine learning to computational biology, and is ubiquitous in decoding classical error-correcting codes. The algorithm works by passing messages between nodes of the factor graph associated with the code and enables efficient decoding of the channel, in some cases even up to the Shannon capacity. Here we construct the first BP algorithm which passes quantum messages on the factor graph and is capable of decoding the classical-quantum channel with pure state outputs. This gives explicit decoding circuits whose number of gates is quadratic in the code length. We also show that this decoder can be modified to work with polar codes for the pure state channel and as part of a decoder for transmitting quantum information over the amplitude damping channel. These represent the first explicit capacity-achieving decoders for non-Pauli channels.

An integrated circuit switch

Science.gov (United States)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

Four-terminal circuit element with photonic core

Science.gov (United States)

Sampayan, Stephen

2017-08-29

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.

The Use of Tygon Tubing Sterilized by Gamma Radiation in Heart-Lung By-Pass Machines

Energy Technology Data Exchange (ETDEWEB)

Alladine, M. F.; Gibbons, J. R. P. [London Chest Hospital, London (United Kingdom)

1967-09-15

Tygon tubing is a co-polymer polyvinyl chloride. This tubing is used throughout the circuit of our heart-lung by-pass machines and had been sterilized by autoclaving or exposure to ethylene oxide gas. Tubing sterilized by autoclaving was noted to have a decrease in tensile strength and the transparency of the tubing was affected. Sterilization by ethylene oxide had the disadvantage that gas was often present in the lumen of the tube when connected to the machine. Lengths of Tygon tubing were sterilized by gamma radiation at varying radiation levels and temperatures. Bacteriological studies were done on the tubing and estimation of tensile strength carried out. We have found that a level of radiation of 2. 5 to 3. 0 Mrad at 20°C produces little or no change in tensile strength and the tubing remains bacteriologically sterile. Tygon tubing sterilized in this way has now been used in over sixty heart-lung by-pass machine operations. (author)

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

In-situ fabrication of flexible vertically integrated electronic circuits by inkjet printing

International Nuclear Information System (INIS)

Wang Zhuo; Wu Wenwen; Yang Qunbao; Li Yongxiang; Noh, Chang-Ho

2009-01-01

In this paper, a facile approach for fabricating flexible vertically integrated electronic circuits is demonstrated. A desktop inkjet printer was modified and employed to print silver precursor on a polymer-coated buffer substrates. In-situ reaction was taken place and a conducting line was formed without need of a high temperature treatment. Through this process, several layers of metal integrated circuits were deposited sequentially with polymer buffer layers sandwiched between each layer. Hence, vertically integrated electronic components of diodes, solar cells, flexible flat panel displays, and electrochromic devices can be built with this simple and low-cost technique.

Compact pulse topology for adjustable high-voltage pulse generation using an SOS diode

NARCIS (Netherlands)

Driessen, A.B.J.M.; Heesch, van E.J.M.; Huiskamp, T.; Beckers, F.J.C.M.; Pemen, A.J.M.

2014-01-01

In this paper, a compact circuit topology is presented for pulsed power generation with a semiconductor opening switch (SOS). Such circuits require the generation of a fast forward current through the diode, followed by a reverse current that activates the recovery process. In general, magnetic

A new AC driving circuit for a top emission AMOLED

International Nuclear Information System (INIS)

Zhang Yongwen; Chen Wenbin; Liu Haohan

2013-01-01

A new voltage programmed pixel circuit with top emission design for active-matrix organic light-emitting diode (AMOLED) displays is presented and verified by HSPICE simulations. The proposed pixel circuit consists of five poly-Si TFTs, and can effectively compensate for the threshold voltage variation of the driving TFT. Meanwhile, the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period. (semiconductor integrated circuits)

Magneto Rheological Semi-Active Damper with External By-pass Circuit in Modular Structure

Directory of Open Access Journals (Sweden)

Alexandru Boltoşi

2010-10-01

Full Text Available In order to perform experimentally studies, in the paper it is presented a simple method which was elaborated to realize reliable, at low cost and reproducible semi-active dampers with magnetorheological fluids, having external magnetic circuit. The main components are common constitutive elements of industrial hydraulic and pneumatic drivers, having the supplementary advantages being manufactured in a large scale of overall dimensions and demanding minimal modifications. As accumulator, a similar type of hydraulic or pneumatic cylinder was used. The work of the whole damper can be optimized by modifying the nitrogen pressure and interior volume of accumulator. Another important advantage of this conception is the possibility to realize a modular structure composed by the damper, accumulator and magnetic field generator, interconnected by flexible elements.

Printed Graphene Derivative Circuits as Passive Electrical Filters.

Science.gov (United States)

Sinar, Dogan; Knopf, George K

2018-02-23

The objective of this study is to inkjet print resistor-capacitor ( RC ) low pass electrical filters, using a novel water-based cellulose graphene ink, and compare the voltage-frequency and transient behavior to equivalent circuits constructed from discrete passive components. The synthesized non-toxic graphene-carboxymethyl cellulose (G-CMC) ink is deposited on mechanically flexible polyimide substrates using a customized printer that dispenses functionalized aqueous solutions. The design of the printed first-order and second-order low-pass RC filters incorporate resistive traces and interdigitated capacitors. Low pass filter characteristics, such as time constant, cut-off frequency and roll-off rate, are determined for comparative analysis. Experiments demonstrate that for low frequency applications (graphene derivative circuits performed as well as the circuits constructed from discrete resistors and capacitors for both low pass filter and RC integrator applications. The impact of mechanical stress due to bending on the electrical performance of the flexible printed circuits is also investigated.

Printed Graphene Derivative Circuits as Passive Electrical Filters

Directory of Open Access Journals (Sweden)

Dogan Sinar

2018-02-01

Full Text Available The objective of this study is to inkjet print resistor-capacitor (RC low pass electrical filters, using a novel water-based cellulose graphene ink, and compare the voltage-frequency and transient behavior to equivalent circuits constructed from discrete passive components. The synthesized non-toxic graphene-carboxymethyl cellulose (G-CMC ink is deposited on mechanically flexible polyimide substrates using a customized printer that dispenses functionalized aqueous solutions. The design of the printed first-order and second-order low-pass RC filters incorporate resistive traces and interdigitated capacitors. Low pass filter characteristics, such as time constant, cut-off frequency and roll-off rate, are determined for comparative analysis. Experiments demonstrate that for low frequency applications (<100 kHz the printed graphene derivative circuits performed as well as the circuits constructed from discrete resistors and capacitors for both low pass filter and RC integrator applications. The impact of mechanical stress due to bending on the electrical performance of the flexible printed circuits is also investigated.

Energy pumping in electrical circuits under avalanche noise.

Science.gov (United States)

Kanazawa, Kiyoshi; Sagawa, Takahiro; Hayakawa, Hisao

2014-07-01

We theoretically study energy pumping processes in an electrical circuit with avalanche diodes, where non-Gaussian athermal noise plays a crucial role. We show that a positive amount of energy (work) can be extracted by an external manipulation of the circuit in a cyclic way, even when the system is spatially symmetric. We discuss the properties of the energy pumping process for both quasistatic and finite-time cases, and analytically obtain formulas for the amounts of the work and the power. Our results demonstrate the significance of the non-Gaussianity in energetics of electrical circuits.

Controlled short-circuiting MIG-MAG welding process and procedures applied to the root pass in pipeline construction; Processo de soldagem MIG/MAG em curto-circuito controlado e procedimentos aplicados ao passe de raiz na construcao de linhas dutoviarias

Energy Technology Data Exchange (ETDEWEB)

Silva, Regis H.G. e; Gohr Junior, Raul; Weck, Leonardo W.A. [Santa Catarina Univ., Florianopolis, SC (Brazil). Dept. de Engenharia Mecanica. Lab. de Soldagem e Mecatronica (LABSOLDA)

2005-07-01

The work deals with the study and development of the Controlled Short-Circuiting MIG/MAG Welding Process (CCC) and procedures for the root pass on pipes, in pipelines construction. The developed process (CCC) consists in an semi-automatic slag free operation, yielding higher productivity than the Coated Electrode and TIG processes, with satisfactory properties on the root weld. The significant influence of the welding over the time schedule and construction cost makes the development of this technology attractive, in order to become available at low cost, enhancing the companies' competitiveness in the globalized oil sector. The developed system, a MIG/MAG variant, features the advantages of short-circuiting metal transfer and avoids its inconveniences (mainly with high CO{sub 2} content gases), enabling its use on pipes root welding. This is possible through current waveform control, providing process and weld pool stability. Procedures for the root pass were determined for each of the welding positions reached in thick walled pipes welding, with the CCC. Also, the low welder training time was notable. (author)

High performance Schottky diodes based on indium-gallium-zinc-oxide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

2016-07-15

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

Circuit effects on Pierce instabilities revisited

International Nuclear Information System (INIS)

Kuhn, S.; Hoerhager, M.; Crystal, T.L.

1985-01-01

The problem of external circuit effects on Pierce diode instability studied by Raadu and Silevitch is reconsidered. The characteristic equation and the ensuing eigenfrequencies are found to disagree with those given by the authors above, which discrepancy is attributed to the fact that one of their boundary conditions is inconsistent with the model chosen. (author)

Simple, fast and accurate two-diode model for photovoltaic modules

Energy Technology Data Exchange (ETDEWEB)

Ishaque, Kashif; Salam, Zainal; Taheri, Hamed [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, UTM 81310, Skudai, Johor Bahru (Malaysia)

2011-02-15

This paper proposes an improved modeling approach for the two-diode model of photovoltaic (PV) module. The main contribution of this work is the simplification of the current equation, in which only four parameters are required, compared to six or more in the previously developed two-diode models. Furthermore the values of the series and parallel resistances are computed using a simple and fast iterative method. To validate the accuracy of the proposed model, six PV modules of different types (multi-crystalline, mono-crystalline and thin-film) from various manufacturers are tested. The performance of the model is evaluated against the popular single diode models. It is found that the proposed model is superior when subjected to irradiance and temperature variations. In particular the model matches very accurately for all important points of the I-V curves, i.e. the peak power, short-circuit current and open circuit voltage. The modeling method is useful for PV power converter designers and circuit simulator developers who require simple, fast yet accurate model for the PV module. (author)

Radiography of the connection between a LHC magnet and its diode in sector 3-4

CERN Multimedia

Brice, Maximilien

2015-01-01

Fin mars 2015, les équipes du LHC ont réalisé différents tests pour identifier la cause d'un court-circuit vers la terre entre un aimant et sa diode de protection qui retardait le redémarrage du LHC. Le 25 mars, ils ont effectué des radiographies de la connexion. End of March 2015, LHC teams have performed different tests to identify the cause of a short-circuit to ground between a magnet and its protection diode. On 25 March they took an X-ray of the affected diode.

Performance review and reengineering of the protection diodes of the LHC main superconducting magnets

CERN Document Server

Savary, F; Bednarek, M J; Dahlerup-Petersen, K; D'Angelo, G; Dib, G; Giloux, C; Grand-Clement, L; Izquierdo Bermudez, S; Moron-Ballester, R; Prin, H; Roger, V; Verweij, A; Willering, G

2014-01-01

The LHC main superconducting circuits are composed of up to 154 series-connected dipole magnets and 51 series-connected quadrupole magnets. These magnets operate at 1.9 K in superfluid helium at a nominal current of 11.85 kA. Cold diodes are connected in parallel to each magnet in order to bypass the current in case of a quench in the magnet while ramping down the current in the entire circuit. Both the diodes and the diode leads should therefore be capable of conducting this exponentially decaying current with time constants of up to 100 s. The diode stacks consist of the diodes and their heat sinks, and are essential elements of the protection system from which extremely high reliability is expected. The electrical resistance of 24 diode leads was measured in the LHC machine during operation. Unexpectedly high resistances of the order of 40 μΩ were measured at a few locations, which triggered a comprehensive review of the diode behaviour and of the associated current leads and bolted contacts. In this pap...

Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

Science.gov (United States)

Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

2017-09-20

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Integrated Circuit Stellar Magnitude Simulator

Science.gov (United States)

Blackburn, James A.

1978-01-01

Describes an electronic circuit which can be used to demonstrate the stellar magnitude scale. Six rectangular light-emitting diodes with independently adjustable duty cycles represent stars of magnitudes 1 through 6. Experimentally verifies the logarithmic response of the eye. (Author/GA)

Computer simulation model of reflex e-beam systems coupled to an external circuit

International Nuclear Information System (INIS)

Jungwirth, K.; Stavinoha, P.

1982-01-01

Dynamics of ions and relativistic electrons in various high-voltage reflexing systems (reflex diodes and triodes) was investigated numerically by means of 1 1/2-dimensional PIC simulation model OREBIA. Its perfected version OREBIA-REX also accounts for system coupling to an external power source circuit, thus yielding the currents and applied voltage self-consistently. Various modes of operation of reflex diode and triode were studied using both models. It is shown that neglecting the influence of the external circuit can lead to seve--re overestimation of both ion currents and electron accumulation rates. In coupled systems with ions repeated collapses of impedance due to electron-ion relaxation processes are observed. The current and voltage pulses calculated for several reflex diodes and triodes with and without ions are presented. (J.U.)

MOS voltage automatic tuning circuit

OpenAIRE

李, 田茂; 中田, 辰則; 松本, 寛樹

2004-01-01

Abstract ###Automatic tuning circuit adjusts frequency performance to compensate for the process variation. Phase locked ###loop (PLL) is a suitable oscillator for the integrated circuit. It is a feedback system that compares the input ###phase with the output phase. It can make the output frequency equal to the input frequency. In this paper, PLL ###fomed of MOSFET's is presented.The presented circuit consists of XOR circuit, Low-pass filter and Relaxation ###Oscillator. On PSPICE simulation...

Analysis of each branch current of serial solar cells by using an equivalent circuit model

International Nuclear Information System (INIS)

Yi Shi-Guang; Zhang Wan-Hui; Ai Bin; Song Jing-Wei; Shen Hui

2014-01-01

In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff's current and voltage law. First, parameters are obtained from the I—V (current—voltage) curves for typical monocrystalline silicon solar cells (125 mm × 125 mm). Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents (I sh1 and I sh2 ), diode currents (I D1 and I D2 ), and load current (I L ) for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module. (interdisciplinary physics and related areas of science and technology)

Quench protection diodes for the large hadron collider LHC at CERN

International Nuclear Information System (INIS)

Hagedorn, D.; Naegele, W.

1992-01-01

For the quench protection of the main ring dipole and quadrupole magnets for the proposed Large Hadron Collider at CERN two lines of approach have been pursued for the realization of a suitable high current by-pass element and liquid helium temperature. Two commercially available diodes of the HERA type connected in parallel can easily meet the requirements if a sufficient good current sharing is imposed by current balancing elements. Design criteria for these current balancing elements are derived from individual diode characteristics. Single diode elements of thin base region, newly developed in industry, have been successfully tested. The results are promising and, if the diodes can be made with reproducible characteristics, they will provide the preferred solution especially in view of radiation hardness

Performance comparison of CO2 and diode lasers for deep-section concrete cutting

International Nuclear Information System (INIS)

Crouse, Philip L.; Li, Lin; Spencer, Julian T.

2004-01-01

Layer-by-layer laser machining with mechanical removal of vitrified dross between passes is a new technique with a demonstrated capability for deep-section cutting, not only of concrete, but of ceramic and refractory materials in general. For this application fairly low power densities are required. A comparison of experimental results using high-power CO 2 and diode lasers under roughly equivalent experimental conditions, cutting to depths of >100 mm, is presented. A marked improvement in cutting depth per pass is observed for the case of the diode laser. The increased cutting rate is rationalized in terms of the combined effects of coupling efficiency and beam shape

Peak reading detector circuit

International Nuclear Information System (INIS)

Courtin, E.; Grund, K.; Traub, S.; Zeeb, H.

1975-01-01

The peak reading detector circuit serves for picking up the instants during which peaks of a given polarity occur in sequences of signals in which the extreme values, their time intervals, and the curve shape of the signals vary. The signal sequences appear in measuring the foetal heart beat frequence from amplitude-modulated ultrasonic, electrocardiagram, and blood pressure signals. In order to prevent undesired emission of output signals from, e. g., disturbing intermediate extreme values, the circuit consists of the series connections of a circuit to simulate an ideal diode, a strong unit, a discriminator for the direction of charging current, a time-delay circuit, and an electronic switch lying in the decharging circuit of the storage unit. The time-delay circuit thereby causes storing of a preliminary maximum value being used only after a certain time delay for the emission of the output signal. If a larger extreme value occurs during the delay time the preliminary maximum value is cleared and the delay time starts running anew. (DG/PB) [de

High current, high bandwidth laser diode current driver

Science.gov (United States)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

Evaluation of treatment effects for high-performance dye-sensitized solar cells using equivalent circuit analysis

International Nuclear Information System (INIS)

Murayama, Masaki; Mori, Tatsuo

2006-01-01

Equivalent circuit analysis using a one-diode model was carried out as a simpler, more convenient method to evaluate the electric mechanism and to employ effective treatment of a dye-sensitized solar cell (DSC). Cells treated using acetic acid or 4,t-butylpyridine were measured under irradiation (0.1 W/m 2 , AM 1.5) to obtain current-voltage (I-V) curves. Cell performance and equivalent circuit parameters were calculated from the I-V curves. Evaluation based on residual factors was useful for better fitting of the equivalent circuit to the I-V curve. The diode factor value was often over two for high-performance DSCs. Acetic acid treatment was effective to increase the short-circuit current by decreasing the series resistance of cells. In contrast, 4,t-butylpyridine was effective to increase open-circuit voltage by increasing the cell shunt resistance. Previous explanations considered that acetic acid worked to decrease the internal resistance of the TiO 2 layer and butylpyridine worked to lower the back-electron-transfer from the TiO 2 to the electrolyte

Modeling and analysis of power extraction circuits for passive UHF RFID applications

International Nuclear Information System (INIS)

Fan Bo; Dai Yujie; Zhang Xiaoxing; Lue Yingjie

2009-01-01

Modeling and analysis of far field power extraction circuits for passive UHF RF identification (RFID) applications are presented. A mathematical model is derived to predict the complex nonlinear performance of UHF voltage multiplier using Schottky diodes. To reduce the complexity of the proposed model, a simple linear approximation for Schottky diode is introduced. Measurement results show considerable agreement with the values calculated by the proposed model. With the derived model, optimization on stage number for voltage multiplier to achieve maximum power conversion efficiency is discussed. Furthermore, according to the Bode-Fano criterion and the proposed model, a limitation on maximum power up range for passive UHF RFID power extraction circuits is also studied.

Magnetically insulated H- diodes

International Nuclear Information System (INIS)

Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

1993-01-01

At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

Effect of Pedot-Pss on Electrical and Photovoltaic Properties of ITO/MEH-PPV:PCBM/Al Organic Diodes

International Nuclear Information System (INIS)

Gunduz, B.

2008-01-01

The photovoltaic and electrical properties of ITO/MEH-PPV:PCBM/Al and ITO/PEDOT-PSS/MEHPPV:PCBM/Al organic diodes have been investigated. The ideality factor, series resistance and shunt resistance values of ITO/MEH-PPV:PCBM/Al and ITO/PEDOT-PSS/MEHPPV:PCBM/Al diodes were found to be 4.6, 6.84x10 6 Ω, 2.2x10 8 Ω and 4.02, 5.8x10 5 Ω, 2x10 7 Ω respectively. The electronic parameters of the ITO/MEH-PPV:PCBM/Al diode were improved using PEDOT-PSS conducting polymer. ITO/MEH-PPV:PCBM/Al and ITO/PEDOT-PSS/MEHPPV:PCBM/Al organic diodes indicate a photovoltaic behaviour with a maximum open circuit voltage V o c and short-circuit current I s c. The photoconductivity sensitivity and responsivity properties of the organic diodes have been characterized by transient-current measurements. The obtained electrical and photovoltaic results indicate that ITO/MEH-PPV:PCBM/Al and ITO/PEDOT-PSS/MEHPPV:PCBM/Al structures are the organic photodiodes with calculated electronic parameters and the electrical properties of the ITO/MEH-PPV:PCBM/Al diode have been improved with PEDOT-PSS conducting polymer

A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth

International Nuclear Information System (INIS)

Tong Tao; Chi Baoyong; Wang Ziqiang; Zhang Ying; Jiang Hanjun; Wang Zhihua

2010-01-01

A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth in 0.35 μm CMOS is presented. The circuit consists of two variable gain amplifiers (VGA) in cascade and a G m -C elliptic low-pass filter (LPF). The filter-order and the cut-off frequency of the LPF can be reconfigured to satisfy the requirements of various applications. In order to achieve the optimum power consumption, the bandwidth of the VGAs can also be dynamically reconfigured and some G m cells can be cut off in the given application. Simulation results show that the analog baseband circuit consumes 16.8 mW for WLAN, 8.9 mW for WCDMA and only 6.5 mW for Bluetooth, all with a 3 V power supply. The analog baseband circuit could provide -10 to +40 dB variable gain, third-order low pass filtering with 1 MHz cut-off frequency for Bluetooth, fourth-order low pass filtering with 2.2 MHz cut-off frequency for WCDMA, and fifth-order low pass filtering with 11 MHz cut-off frequency for WLAN, respectively. (semiconductor integrated circuits)

A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth

Energy Technology Data Exchange (ETDEWEB)

Tong Tao; Chi Baoyong; Wang Ziqiang; Zhang Ying; Jiang Hanjun; Wang Zhihua, E-mail: tongt05@gmail.co [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2010-05-15

A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth in 0.35 {mu}m CMOS is presented. The circuit consists of two variable gain amplifiers (VGA) in cascade and a G{sub m}-C elliptic low-pass filter (LPF). The filter-order and the cut-off frequency of the LPF can be reconfigured to satisfy the requirements of various applications. In order to achieve the optimum power consumption, the bandwidth of the VGAs can also be dynamically reconfigured and some G{sub m} cells can be cut off in the given application. Simulation results show that the analog baseband circuit consumes 16.8 mW for WLAN, 8.9 mW for WCDMA and only 6.5 mW for Bluetooth, all with a 3 V power supply. The analog baseband circuit could provide -10 to +40 dB variable gain, third-order low pass filtering with 1 MHz cut-off frequency for Bluetooth, fourth-order low pass filtering with 2.2 MHz cut-off frequency for WCDMA, and fifth-order low pass filtering with 11 MHz cut-off frequency for WLAN, respectively. (semiconductor integrated circuits)

Memory Applications Using Resonant Tunneling Diodes

Science.gov (United States)

Shieh, Ming-Huei

Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

Characteristic of laser diode beam propagation through a collimating lens.

Science.gov (United States)

Xu, Qiang; Han, Yiping; Cui, Zhiwei

2010-01-20

A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

Assessment of safety engineering of circuits with dc micromotors

Energy Technology Data Exchange (ETDEWEB)

Pavlyuchenko, L.A.; Starchuk, S.E.

1986-01-01

Presents an assessment of safety engineering in d.c. micromotors operating as part of actuating devices in mining equipment. These micromotors should have RO (especially explosion proof) protection. The safety engineering should be assessed with an intermittent fault in the power line. Equations are given for calculation of the equivalent inductance of the micromotor circuit with an intermittent power line fault. If the circuit is not intrinsically safe, a diode in the forward direction is recommended for connection in series with the micromotor. If the power line is not intrinsically safe, a diode shunt is recommended. Comparative data for power sources (IBP) and micromotors (DPM, DPR, with permanent magnets) are given in tables. 4 refs.

Prevention of short circuits in solution-processed OLED devices

NARCIS (Netherlands)

Jolt Oostra, A.; Blom, P.W.M.; Michels, J.J.

2014-01-01

Pinholes in the emitting layer of an organic light emitting diode (OLED), e.g. induced by particle contamination or processing flaws, lead to direct contact between the hole-injection layer (HIL) and the cathode. The resulting short circuits give rise to catastrophic device failure. We demonstrate

A perturbation-based model for rectifier circuits

Directory of Open Access Journals (Sweden)

Vipin B. Vats

2006-01-01

Full Text Available A perturbation-theoretic analysis of rectifier circuits is presented. The governing differential equation of the half-wave rectifier with capacitor filter is analyzed by expanding the output voltage as a Taylor series with respect to an artificially introduced parameter in the nonlinearity of the diode characteristic as is done in quantum theory. The perturbation parameter introduced in the analysis is independent of the circuit components as compared to the method presented by multiple scales. The various terms appearing in the perturbation series are then modeled in the form of an equivalent circuit. This model is subsequently used in the analysis of full-wave rectifier. Matlab simulation results are included which confirm the validity of the theoretical formulations. Perturbation analysis acts a helpful tool in analyzing time-varying systems and chaotic systems.

New way on designing majorant coincidence circuits

International Nuclear Information System (INIS)

Gajdamaka, R.I.; Kalinnikov, V.A.; Nikityuk, N.M.; Shirikov, V.P.

1982-01-01

A new way of designing fast devices of combinatorial selection by the number of particles passing through a multichannel charged particle detector is decribed. The algorithm of their operation is based on modern algebraic coding theory. By application of analytical computational methods Boolean expressions can be obtianed for designing basic circuits for a large number of inputs. An example of computation of 15 inputs majorant coincidence circuit is considered

Integrated power conditioning for laser diode arrays

International Nuclear Information System (INIS)

Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

1995-01-01

This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

Research on laser detonation pulse circuit with low-power based on super capacitor

Science.gov (United States)

Wang, Hao-yu; Hong, Jin; He, Aifeng; Jing, Bo; Cao, Chun-qiang; Ma, Yue; Chu, En-yi; Hu, Ya-dong

2018-03-01

According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.

Active quenching circuit for a InGaAs single-photon avalanche diode

International Nuclear Information System (INIS)

Zheng Lixia; Wu Jin; Xi Shuiqing; Shi Longxing; Liu Siyang; Sun Weifeng

2014-01-01

We present a novel gated operation active quenching circuit (AQC). In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I–V characteristic measurement results of the detector. The circuit integrated with aROIC (readout integrated circuit) is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications. (semiconductor integrated circuits)

Communication with diode laser: short distance line of sight communication using fiber optics

International Nuclear Information System (INIS)

Mirza, A.H.

1999-01-01

The objective of this project is to carry audio signal from transmitting station to a short distance receiving station along line of sight and also communication through fiber optics is performed, using diode laser light as carrier. In this project optical communication system, modulation techniques, basics of laser and causes of using diode laser are discussed briefly. Transmitter circuit and receiver circuit are fully described. Communication was performed using pulse width modulation technique. Optical fiber communication have many advantages over other type of conventional communication techniques. This report contains the description of optical fiber communication and compared with other communication systems. (author)

Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer

International Nuclear Information System (INIS)

Güllü, Ö.; Aydoğan, S.; Türüt, A.

2012-01-01

In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal–semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current–voltage (I–V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I–V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.

Switchless charge-discharge circuit for electrical capacitance tomography

International Nuclear Information System (INIS)

Kryszyn, J; Smolik, W T; Radzik, B; Olszewski, T; Szabatin, R

2014-01-01

The main factor limiting the performance of electrical capacitance tomography (ECT) is an extremely low value of inter-electrode capacitances. The charge-discharge circuit is a well suited circuit for a small capacitance measurement due to its immunity to noise and stray capacitance, although it has a problem associated with a charge injected by the analogue switches, which results in a dc offset. This paper presents a new diode-based circuit for capacitance measurement in which a charge transfer method is realized without switches. The circuit was built and tested in one channel configuration with 16 multiplexed electrodes. The performance of the elaborated circuit and a comparison with a classic charge-discharge circuit are presented. The elaborated circuit can be used for sensors with inter-electrode capacitances not lower than 10 fF. The presented approach allows us to obtain a similar performance to the classic charge-discharge circuit, but has a simplified design. A lack of the need to synchronize the analogue switches in the transmitter and the receiver part of this circuit could be a desirable feature in the design of measurement systems integrated with electrodes. (paper)

Novel Grounded Capacitor All-Pass and Notch Filters Using Current Conveyors and Differential Amplifier

Directory of Open Access Journals (Sweden)

R. Saraswat

2003-01-01

Full Text Available Three circuits each realizing second-order all-pass/notch filter transfer functions are reported. All circuits use grounded capacitors and are suitable for IC implementation. These circuits offer the advantages of high input impedance and low output impedance and are superior to all earlier realisations.

Tunnel Diode Discriminator with Fixed Dead Time

DEFF Research Database (Denmark)

Diamond, J. M.

1965-01-01

A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

Non-linear thermal fluctuations in a diode

NARCIS (Netherlands)

Kampen, N.G. van

As an example of non-linear noise the fluctuations in a circuit consisting of a diode and a condenser C are studied. From the master equation for this system the following results are derived. 1. (i) The equilibrium distribution of the voltage is rigorously Gaussian, the average voltage being

Equivalent circuit simulation of HPEM-induced transient responses at nonlinear loads

Directory of Open Access Journals (Sweden)

M. Kotzev

2017-09-01

Full Text Available In this paper the equivalent circuit modeling of a nonlinearly loaded loop antenna and its transient responses to HPEM field excitations are investigated. For the circuit modeling the general strategy to characterize the nonlinearly loaded antenna by a linear and a nonlinear circuit part is pursued. The linear circuit part can be determined by standard methods of antenna theory and numerical field computation. The modeling of the nonlinear circuit part requires realistic circuit models of the nonlinear loads that are given by Schottky diodes. Combining both parts, appropriate circuit models are obtained and analyzed by means of a standard SPICE circuit simulator. It is the main result that in this way full-wave simulation results can be reproduced. Furthermore it is clearly seen that the equivalent circuit modeling offers considerable advantages with respect to computation speed and also leads to improved physical insights regarding the coupling between HPEM field excitation and nonlinearly loaded loop antenna.

Wavelet-Based Feature Extraction in Fault Diagnosis for Biquad High-Pass Filter Circuit

OpenAIRE

Yuehai Wang; Yongzheng Yan; Qinyong Wang

2016-01-01

Fault diagnosis for analog circuit has become a prominent factor in improving the reliability of integrated circuit due to its irreplaceability in modern integrated circuits. In fact fault diagnosis based on intelligent algorithms has become a popular research topic as efficient feature extraction and selection are a critical and intricate task in analog fault diagnosis. Further, it is extremely important to propose some general guidelines for the optimal feature extraction and selection. In ...

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

International Nuclear Information System (INIS)

Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

1990-01-01

Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

Filament supply circuit for particle accelerator

International Nuclear Information System (INIS)

Thompson, C.C. Jr.; Malone, H.F.

1975-01-01

In a particle accelerator of the type employing ac primary power and a voltage multiplication apparatus to achieve the required high dc accelerating voltage, a filament supply circuit is powered by a portion of the ac primary power appearing at the last stage of the voltage multiplier. This ac power is applied across a voltage regulator circuit in the form of two zener diodes connected back to back. The threshold of the zeners is below the lowest peak-to-peak voltage of the ac voltage, so that the regulated voltage remains constant for all settings of the adjustable acceleration voltage. The regulated voltage is coupled through an adjustable resistor and an impedance-matching transformer to the accelerator filament. (auth)

Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

Directory of Open Access Journals (Sweden)

Zebiri Mohamed

2018-01-01

Full Text Available In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V and power voltage (P-V of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

Science.gov (United States)

Zebiri, Mohamed; Mediouni, Mohamed; Idadoub, Hicham

2018-05-01

In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V) and power voltage (P-V) of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations

International Nuclear Information System (INIS)

Tessier, G; Polignano, M-L; Pavageau, S; Filloy, C; Fournier, D; Cerutti, F; Mica, I

2006-01-01

Camera-based thermoreflectance microscopy is a unique tool for high spatial resolution thermal imaging of working integrated circuits. However, a calibration is necessary to obtain quantitative temperatures on the complex surface of integrated circuits. The spatial and temperature resolutions reached by thermoreflectance are excellent (360 nm and 2.5 x 10 -2 K in 1 min here), but the precision is more difficult to assess, notably due to the lack of comparable thermal techniques at submicron scales. We propose here a Peltier element control of the whole package temperature in order to obtain calibration coefficients simultaneously on several materials visible on the surface of the circuit. Under high magnifications, movements associated with thermal expansion are corrected using a piezo electric displacement and a software image shift. This calibration method has been validated by comparison with temperatures measured using integrated thermistors and diodes and by a finite volume simulation. We show that thermoreflectance measurements agree within a precision of ±2.3% with the on-chip sensors measurements. The diode temperature is found to underestimate the actual temperature of the active area by almost 70% due to the thermal contact of the diode with the substrate, acting as a heat sink

Photoresponse of poly(para-phenylenevinylene) light-emitting diodes

International Nuclear Information System (INIS)

Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.

1994-01-01

We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent

Modeling of SVM Diode Clamping Three-Level Inverter Connected to Grid

DEFF Research Database (Denmark)

Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

2011-01-01

PLECS is used to model the diode clamping three-level inverter connected to grid and good results are obtained. First the output voltage SVM is described for diode clamping three-level inverter with loads connected to Y. Then the output voltage SVM of diode clamping three-level inverter is simply...... analyzed with loads connected to △. But it will be further researched in the future. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping three-level inverter is briefly presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS...... is very powerful tool to real power circuits and it is very easy to simulate them. They have also verified that SVM control strategy is feasible to control the diode clamping three-level inverter....

Recombination of charge carriers in the GaAs-based p-i-n diode

International Nuclear Information System (INIS)

Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

2010-01-01

It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

Joule-Thief Circuit Performance for Electricity Energy Saving of Emergency Lamps

Science.gov (United States)

Nuryanto Budisusila, Eka; Arifin, Bustanul

2017-04-01

The alternative energy such as battery as power source is required as energy source failures. The other need is outdoor lighting. The electrical power source is expected to be a power saving, optimum and has long life operating. The Joule-Thief circuit is one of solution method for energy saving by using raised electromagnetic force on cored coil when there is back-current. This circuit has a transistor operated as a switch to cut voltage and current flowing along the coils. The present of current causing magnetic induction and generates energy. Experimental prototype was designed by using battery 1.5V to activate Light Emitting Diode or LED as load. The LED was connected in parallel or serial circuit configuration. The result show that the joule-thief circuit able to supply LED circuits up to 40 LEDs.

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers.

Science.gov (United States)

Choi, Hojong; Shung, K Kirk

2014-06-12

The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers

Design structure for in-system redundant array repair in integrated circuits

Science.gov (United States)

Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Quellette, Michael R.; Strissel, Scott A.

2008-11-25

A design structure for repairing an integrated circuit during operation of the integrated circuit. The integrated circuit comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The design structure provides the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The design structure further passes the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

Efficient generation of 1.9  W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2016-01-01

Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates ...... of a laser diode enables the modulation of the pump wavelength by controlling the drive current. This is utilized to achieve a power modulation depth above 90% for the second harmonic light, with a rise time below 40  μs.......Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates 1.......9 W of single-frequency light at 562.4 nm by cascaded single-pass frequency doubling of the 1124.8 nm emission from a distributed Bragg reflector (DBR) tapered laser diode. The absence of a free-space cavity makes the system stable over a base-plate temperature range of 30 K. At the same time, the use...

Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

Directory of Open Access Journals (Sweden)

Martin Janecek

2012-12-01

Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

An optoelectronic integrated device including a laser and its driving circuit

Energy Technology Data Exchange (ETDEWEB)

Matsueda, H.; Nakano, H.; Tanaka, T.P.

1984-10-01

A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realising high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the co-operative operation of the laser and its driving circuit are also presented.

Modelling and Simulation of the Diode Split Transformer

DEFF Research Database (Denmark)

Østergaard, Leo

a significant influence on the picture quality. The most critical component is undoubtedly the diode split transformer (DST). Therefore, if developing a simulation model of the DST is possible, a significant step has been taken in the attempt to model the entire horizontal deflection circuit and to obtain...

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

International Nuclear Information System (INIS)

Manjula, J.; Malarvizhi, S.

2014-01-01

This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented. (semiconductor integrated circuits)

Integrated coincidence circuits

International Nuclear Information System (INIS)

Borejko, V.F.; Grebenyuk, V.M.; Zinov, V.G.

1976-01-01

The description is given of two coincidence units employing integral circuits in the VISHNYA standard. The units are distinguished for the coincidence selection element which is essentially a combination of a tunnel diode and microcircuits. The output fast response of the units is at least 90 MHz in the mode of the output signal unshaped in duration and 50 MHz minimum in the mode of the output signal shaping. The resolution time of the units is dependent upon the duration of input signals

Analysis of a distributed pulse power system using a circuit analysis code

International Nuclear Information System (INIS)

Hoeft, L.O.; BDM Corp., Albuquerque, NM)

1979-01-01

A sophisticated computer code (SCEPTRE), used to analyze electronic circuits, was used to evaluate the performance of a large flash x-ray machine. This device was considered to be a transmission line whose impedance varied with position. This distributed system was modeled by lumped parameter sections with time constants of 1 ns. The model was used to interpret voltage, current, and radiation measurements in terms of diode performance. The effects of tube impedance, diode model, switch behavior, and potential geometric modifications were determined. The principal conclusions were that, since radiation output depends strongly on voltage, diode impedance was much more important than the other parameters, and the charge voltage must be accurately known

A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

Science.gov (United States)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

2017-07-01

We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

Common voltage eliminating of SVM diode clamping three-level inverter connected to grid

DEFF Research Database (Denmark)

Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

2011-01-01

A novel method of common voltage eliminating is put forward for SVM diode clamping three-level inverter connected to grid by calculation of common voltage of its various switching states. PLECS is used to model this three-level inverter connected to grid and good results are obtained. First...... analysis of common mode voltage for switching states of diode clamping 3-level inverter is given in detail. Second the common mode voltage eliminating control strategy of SVM is described for diode clamping three-level inverter. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping...... three-level inverter is presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS is a very powerful tool to real power circuits modeling. They have also verified that proposed common mode voltage eliminating control strategy of SVM is feasible...

Modeling and Analysis of a Fractional-Order Generalized Memristor-Based Chaotic System and Circuit Implementation

Science.gov (United States)

Yang, Ningning; Xu, Cheng; Wu, Chaojun; Jia, Rong; Liu, Chongxin

2017-12-01

Memristor is a nonlinear “missing circuit element”, that can easily achieve chaotic oscillation. Memristor-based chaotic systems have received more and more attention. Research shows that fractional-order systems are more close to real systems. As an important parameter, the order can increase the flexibility and degree of freedom of the system. In this paper, a fractional-order generalized memristor, which consists of a diode bridge and a parallel circuit with an equivalent unit circuit and a linear resistance, is proposed. Frequency and electrical characteristics of the fractional-order memristor are analyzed. A chain structure circuit is used to implement the fractional-order unit circuit. Then replacing the conventional Chua’s diode by the fractional-order generalized memristor, a fractional-order memristor-based chaotic circuit is proposed. A large amount of research work has been done to investigate the influence of the order on the dynamical behaviors of the fractional-order memristor-based chaotic circuit. Varying with the order, the system enters the chaotic state from the periodic state through the Hopf bifurcation and period-doubling bifurcation. The chaotic state of the system has two types of attractors: single-scroll and double-scroll attractor. The stability theory of fractional-order systems is used to determine the minimum order occurring Hopf bifurcation. And the influence of the initial value on the system is analyzed. Circuit simulations are designed to verify the results of theoretical analysis and numerical simulation.

Approaching the Processes in the Generator Circuit Breaker at Disconnection through Sustainability Concepts

Directory of Open Access Journals (Sweden)

Carmen A. Bulucea

2013-03-01

Full Text Available Nowadays, the electric connection circuits of power plants (based on fossil fuels as well as renewable sources entail generator circuit-breakers (GCBs at the generator terminals, since the presence of that electric equipment offers many advantages related to the sustainability of a power plant. In an alternating current (a.c. circuit the interruption of a short circuit is performed by the circuit-breaker at the natural passing through zero of the short-circuit current. During the current interruption, an electric arc is generated between the opened contacts of the circuit-breaker. This arc must be cooled and extinguished in a controlled way. Since the synchronous generator stator can flow via highly asymmetrical short-circuit currents, the phenomena which occur in the case of short-circuit currents interruption determine the main stresses of the generator circuit-breaker; the current interruption requirements of a GCB are significantly higher than for the distribution network circuit breakers. For shedding light on the proper moment when the generator circuit-breaker must operate, using the space phasor of the short-circuit currents, the time expression to the first zero passing of the short-circuit current is determined. Here, the manner is investigated in which various factors influence the delay of the zero passing of the short-circuit current. It is shown that the delay time is influenced by the synchronous machine parameters and by the load conditions which precede the short-circuit. Numerical simulations were conducted of the asymmetrical currents in the case of the sudden three-phase short circuit at the terminals of synchronous generators. Further in this study it is emphasized that although the phenomena produced in the electric arc at the terminals of the circuit-breaker are complicated and not completely explained, the concept of exergy is useful in understanding the physical phenomena. The article points out that just after the short-circuit

Diode-rectified multiphase AC arc for the improvement of electrode erosion characteristics

Science.gov (United States)

Tanaka, Manabu; Hashizume, Taro; Saga, Koki; Matsuura, Tsugio; Watanabe, Takayuki

2017-11-01

An innovative multiphase AC arc (MPA) system was developed on the basis of a diode-rectification technique to improve electrode erosion characteristics. Conventionally, electrode erosion in AC arc is severer than that in DC arc. This originated from the fact that the required properties for the cathode and anode are different, although an AC electrode works as the cathode and the anode periodically. To solve this problem, a separation of AC electrodes into pairs of thoriated tungsten cathode and copper anode by diode-rectification was attempted. A diode-rectified multiphase AC arc (DRMPA) system was then successfully established, resulting in a drastic improvement of the erosion characteristics. The electrode erosion rate in the DRMPA was less than one-third of that in the conventional MPA without the diode rectification. In order to clarify its erosion mechanism, electrode phenomena during discharge were visualized by a high-speed camera system with appropriate band-pass filters. Fluctuation characteristics of the electrode temperature in the DRMPA were revealed.

High-speed dynamic domino circuit implemented with gaas mesfets

Science.gov (United States)

Yang, Long (Inventor); Long, Stephen I. (Inventor)

1990-01-01

A dynamic logic circuit (AND or OR) utilizes one depletion-mode metal-semiconductor FET for precharging an internal node A, and a plurality of the same type of FETs in series, or a FET in parallel with one or more of the series connected FETs for implementing the logic function. A pair of FETs are connected to provide an output inverter with two series diodes for level shift. A coupling capacitor may be employed with a further FET to provide level shifting required between the inverter and the logic circuit output terminal. These circuits may be cascaded to form a domino chain.

Electrical circuit for checking the state of charge of a vehicle battery. Elektrische Schaltung zur Kontrolle des Ladezustandes einer Batterie in Kraftfahrzeugen

Energy Technology Data Exchange (ETDEWEB)

Gamulescu, A

1981-05-27

The invention concerns an electrical circuit for checking the state of charge of a vehicle battery. The circuit consists of a transistor, whose collector is connected via a series resistance and a Zener diode to the positive pole of the battery. The breakdown voltage of the Zener diode is about 12 volts. The emitter of the transistor is connected via an LED to earth. A second LED is connected in parallel with the collector-emitter circuit of the transistor, which works via a voltage divider. This voltage divider reduces the voltage at the LED with the transistor which is conducting to about 0.7 volts. A second Zener diode connected via a series resistance to the positive pole is also provided. Its breakdown voltage is 15 volts.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

Science.gov (United States)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

Science.gov (United States)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

Science.gov (United States)

Mamedov, R. K.; Aslanova, A. R.

2018-06-01

The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2014-01-01

Full Text Available This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when ΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%, and when ΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the I×R (current × resistance drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the I×R drop voltage of a power line.

Monte Carlo modelling of Schottky diode for rectenna simulation

Science.gov (United States)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

Science.gov (United States)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

Resonant Circuits and Introduction to Vacuum Tubes, Industrial Electronics 2: 9325.03. Course Outline.

Science.gov (United States)

Dade County Public Schools, Miami, FL.

The 135 clock-hour course for the 11th year consists of outlines for blocks of instruction on series resonant circuits, parallel resonant circuits, transformer theory and application, vacuum tube fundamentals, diode vacuum tubes, triode tube construction and parameters, vacuum tube tetrodes and pentodes, beam-power and multisection tubes, and…

Oxide bipolar electronics: materials, devices and circuits

International Nuclear Information System (INIS)

Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; Von Wenckstern, Holger

2016-01-01

We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization. (topical review)

Mixed-mode chaotic circuit with Wien-bridge configuration: The results of experimental verification

International Nuclear Information System (INIS)

Kilic, Recai

2007-01-01

In this paper, we deal with the experimentally implementation of inductorless Wien bridge-based mixed-mode chaotic circuit (MMCC) which is capable to exhibit both linear and nonlinear oscillations. The results of experimental implementation agree with the results of theoretical and computer simulation presented in literature. Since the proposed implementation of MMCC circuit uses different design blocks such as Wien bridge-based autonomous circuit part, CFOA (current feedback operational amplifier)-based floating inductance simulator, CFOA-based Chua's diode and switching mechanism, it offers very versatile chaotic circuit model for studying autonomous and nonautonomous chaotic dynamics

Circuits and electronics hands-on learning with analog discovery

CERN Document Server

Okyere Attia, John

2018-01-01

The book provides instructions on building circuits on breadboards, connecting the Analog Discovery wires to the circuit under test, and making electrical measurements. Various measurement techniques are described and used in this book, including: impedance measurements, complex power measurements, frequency response measurements, power spectrum measurements, current versus voltage characteristic measurements of diodes, bipolar junction transistors, and Mosfets. The book includes end-of-chapter problems for additional exercises geared towards hands-on learning, experimentation, comparisons between measured results and those obtained from theoretical calculations.

Application of Memristors in Microwave Passive Circuits

Directory of Open Access Journals (Sweden)

M.Potrebic

2015-06-01

Full Text Available The recent implementation of the fourth fundamental electric circuit element, the memristor, opened new vistas in many fields of engineering applications. In this paper, we explore several RF/microwave passive circuits that might benefit from the memristor salient characteristics. We consider a power divider, coupled resonator bandpass filters, and a low-reflection quasi-Gaussian lowpass filter with lossy elements. We utilize memristors as configurable linear resistors and we propose memristor-based bandpass filters that feature suppression of parasitic frequency pass bands and widening of the desired rejection band. The simulations are performed in the time domain, using LTspice, and the RF/microwave circuits under consideration are modeled by ideal elements available in LTspice.

Fabrication of seamless calandria tubes by cold pilgering route using 3-pass and 2-pass schedules

Science.gov (United States)

Saibaba, N.

2008-12-01

Calandria tube is a large diameter, extremely thin walled zirconium alloy tube which has diameter to wall thickness ratio as high as 90-95. Such tubes are conventionally produced by the 'welded route', which involves extrusion of slabs followed by a series of hot and cold rolling passes, intermediate anneals, press forming of sheets into circular shape and closing the gap by TIG welding. Though pilgering is a well established process for the fabrication of seamless tubes, production of extremely thin walled tubes offers several challenges during pilgering. Nuclear fuel complex (NFC), Hyderabad, has successfully developed a process for the production of Zircaloy-4 calandria tubes by adopting the 'seamless route' which involves hot extrusion of mother blanks followed by three-pass pilgering or two-pass pilgering schedules. This paper deals with standardization of the seamless route processes for fabrication of calandria tubes, comparison between the tubes produced by 2-pass and 3-pass pilgering schedules, role of ultrasonic test charts for control of process parameters, development of new testing methods for burst testing and other properties.

Fabrication of seamless calandria tubes by cold pilgering route using 3-pass and 2-pass schedules

International Nuclear Information System (INIS)

Saibaba, N.

2008-01-01

Calandria tube is a large diameter, extremely thin walled zirconium alloy tube which has diameter to wall thickness ratio as high as 90-95. Such tubes are conventionally produced by the 'welded route', which involves extrusion of slabs followed by a series of hot and cold rolling passes, intermediate anneals, press forming of sheets into circular shape and closing the gap by TIG welding. Though pilgering is a well established process for the fabrication of seamless tubes, production of extremely thin walled tubes offers several challenges during pilgering. Nuclear fuel complex (NFC), Hyderabad, has successfully developed a process for the production of Zircaloy-4 calandria tubes by adopting the 'seamless route' which involves hot extrusion of mother blanks followed by three-pass pilgering or two-pass pilgering schedules. This paper deals with standardization of the seamless route processes for fabrication of calandria tubes, comparison between the tubes produced by 2-pass and 3-pass pilgering schedules, role of ultrasonic test charts for control of process parameters, development of new testing methods for burst testing and other properties

The error analysis of the reverse saturation current of the diode in the modeling of photovoltaic modules

International Nuclear Information System (INIS)

Wang, Gang; Zhao, Ke; Qiu, Tian; Yang, Xinsheng; Zhang, Yong; Zhao, Yong

2016-01-01

In the modeling and simulation of photovoltaic modules, especially in calculating the reverse saturation current of the diode, the series and parallel resistances are often neglected, causing certain errors. We analyzed the errors at the open circuit point, and proposed an iterative algorithm to calculate the modified values of the reverse saturation current, series resistance and parallel resistance of the diode, in order to reduce the errors. Assuming independent irradiation and temperature effects, the irradiation-dependence and the temperature-dependence of the open circuit voltage were introduced to obtain the modified formula of the open circuit voltage under any condition. Experimental results show that this modified formula has high accuracy, even at irradiance as low as 40 W/m"2. The errors of open circuit voltage were significantly reduced, indicating that this modified model is suitable for simulations of photovoltaic modules. - Highlights: • We propose a new method for modeling PV modules with higher accuracy. • The errors of open circuit voltage are significantly reduced. • I_o under any condition is calculated.

Design and fabrication of metal-insulator-metal diode for high frequency applications

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Development of a semiconductor neutron dosimeter with a PIN diode

International Nuclear Information System (INIS)

Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

2004-01-01

When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

Design of nuclear pulse shaped circuit based on proportional counter

International Nuclear Information System (INIS)

Song Qianqian; Cheng Yi; Tuo Xianguo

2011-01-01

Use the self-developed proportional to sample gas tritium in environment and make the measurement. For this detector, a kind of pulse shape circuit based on second order active low pass filtering circuit realized filtering and shaping nuclear pulse by high-speed operational amplifier, with less stages that has been approved for filter Gaussian wave. Use Multisim 10.0 to simulate the different parameters of the filter circuit. The simulation result was consistent with the theoretical results. The experiments proved the feasibility of this circuit, and at the same time provided a convenient and reliable method for analysis and optimization of the nuclear pulse waveform in order for discriminating by MCA. (authors)

A new design of pulsed laser diode driver system for multistate quantum key distribution

Science.gov (United States)

Abdullah, M. S.; Jamaludin, M. Z.; Witjaksono, G.; Mokhtar, M. H. H.

2011-07-01

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes' life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.

Design of laser diode driver with constant current and temperature control system

Science.gov (United States)

Wang, Ming-cai; Yang, Kai-yong; Wang, Zhi-guo; Fan, Zhen-fang

2017-10-01

A laser Diode (LD) driver with constant current and temperature control system is designed according to the LD working characteristics. We deeply researched the protection circuit and temperature control circuit based on thermos-electric cooler(TEC) cooling circuit and PID algorithm. The driver could realize constant current output and achieve stable temperature control of LD. Real-time feedback control method was adopted in the temperature control system to make LD work on its best temperature point. The output power variety and output wavelength shift of LD caused by current and temperature instability were decreased. Furthermore, the driving current and working temperature is adjustable according to specific requirements. The experiment result showed that the developed LD driver meets the characteristics of LD.

Thermal diode made by nematic liquid crystal

Energy Technology Data Exchange (ETDEWEB)

Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

2016-09-07

This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

High-power direct diode laser output by spectral beam combining

Science.gov (United States)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

Ultra Linear Low-loss Varactors & Circuits for Adaptive RF Systems

NARCIS (Netherlands)

Huang, C.

2010-01-01

With the evolution of wireless communication, varactors can play an important role in enabling adaptive transceivers as well as phase-diversity systems. This thesis presents various varactor diode-based circuit topologies that facilitate RF adaptivity. The proposed varactor configurations can act as

Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

International Nuclear Information System (INIS)

Morel, D.L.; Moustakas, T.D.

1981-01-01

The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x/ /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence-band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band-gap regime

Implementation of dosimetric quality control on IMRT and VMAT treatments in radiotherapy using diodes

International Nuclear Information System (INIS)

Gonzales, A.; Garcia, B.; Ramirez, J.; Marquina, J.

2014-08-01

To implement quality control of IMRT and VMAT treatments Rapid Arc radiotherapy using diode array. Were tested 90 patients with IMRT and VMAT Rapid Arc, comparing the planned dose to the dose administered, used the Map-Check-2 and Arc-Check of Sun Nuclear, they using the gamma factor for calculating and using comparison parameters 3% / 3m m. The statistic shows that the quality controls of the 90 patients analyzed, presented a percentage of diodes that pass the test between 96,7% and 100,0% of the irradiated diodes. Implemented in Clinical ALIADA Oncologia Integral, the method for quality control of IMRT and VMAT treatments Rapid Arc radiotherapy using diode array. (Author)

Single DV-DXCCII Based Voltage Controlled First Order All-pass Filter with Inverting and Non-inverting responses

Directory of Open Access Journals (Sweden)

B Chaturvedi

2015-12-01

Full Text Available In this paper, a new voltage controlled first order all-pass filter is presented. The proposed circuit employs a single differential voltage dual-X second generation current conveyor (DV-DXCCII and a grounded capacitor only. The proposed all-pass filter provides both inverting and non inverting voltage-mode outputs from the same configuration simultaneously without any matching condition. Non-ideal analysis along with sensitivity analysis is also investigated. The proposed circuit has low active and passive sensitivities. As an application the proposed all-pass filter is connected in cascade to get higher order filter. The theoretical results are validated thorough PSPICE simulations using TSMC 0.18µm CMOS process parameters.

The Light-Emitting Diode as a Light Detector

Science.gov (United States)

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

Mixed-mode chaotic circuit with Wien-bridge configuration: The results of experimental verification

Energy Technology Data Exchange (ETDEWEB)

Kilic, Recai [Erciyes University, Department of Electronic Engineering, 38039 Kayseri (Turkey)]. E-mail: kilic@erciyes.edu.tr

2007-05-15

In this paper, we deal with the experimentally implementation of inductorless Wien bridge-based mixed-mode chaotic circuit (MMCC) which is capable to exhibit both linear and nonlinear oscillations. The results of experimental implementation agree with the results of theoretical and computer simulation presented in literature. Since the proposed implementation of MMCC circuit uses different design blocks such as Wien bridge-based autonomous circuit part, CFOA (current feedback operational amplifier)-based floating inductance simulator, CFOA-based Chua's diode and switching mechanism, it offers very versatile chaotic circuit model for studying autonomous and nonautonomous chaotic dynamics.

High brightness diode lasers controlled by volume Bragg gratings

Science.gov (United States)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Development on mini X-ray diode

International Nuclear Information System (INIS)

Jiang Shaoen; Sun Kexu; Peng Nengling; Huang Tianxuan; Cui Yanli; Yi Rongqing; Chen Jiusen

2004-01-01

The mini X-ray diode (M-XRD) was developed, and was used in mini soft X-ray spectrometer. Compared with traditional XRD, M-XRD's volume reduces to 1/30. M-XRD's property was experimentally examined on Shenguang II laser facility. The experimental results indicated that the temporal response and sensitivity of M-XRD are basically consistent with traditional XRD. The equivalent circuit of XRD was analyzed, and its response time and linear saturated current were calculated. (authors)

Production of ion beam by conical pinched electron beam diode

International Nuclear Information System (INIS)

Matsukawa, Y.; Nakagawa, Y.

1982-01-01

Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

Science.gov (United States)

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

2016-08-01

A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

The diode pump: its application to nuclear particle counting and to the detection of rapid neutronic power excursions in atomic piles (1962); La pompe a diodes, son application au comptage de particules nucleaires et a la detection des excursions rapides de puissance neutronique d'une pile atomique (1962)

Energy Technology Data Exchange (ETDEWEB)

Nicolo, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1962-05-15

This work deals in particular with three applications of an electronic device whose principle is based on that of the diode pump. 1- Linear response circuit 2- Logarithmic response circuit 3- Detection of neutronic power excursions in atomic piles using a circuit or a combination of several circuits of the linear response type. Each of the applications has been studied theoretically and experimentally. Finally, the detection of rapid power excursions is extensively discussed with reference to the many methods available, emphasis being laid on the rapidity of the electronic response. (author) [French] Cet ouvrage traite plus particulierement de trois applications d'un dispositif electronique dont le principe de fonctionnement est base sur celui de la pompe a diodes. 1- Circuit a reponse lineaire 2- Circuit a reponse logarithmique 3- Detection des excursions de puissance neutronique d'une pile atomique a l'aide d'un circuit ou d'une association de plusieurs circuits a reponse lineaire. Chacune des applications fait l'objet d'une etude theorique et experimentale. Enfin, la detection des excursions rapides de puissance est tres largement discutee a travers plusieurs methodes, notamment sur la partie concernant la rapidite de reponse de l'electronique. (auteur)

Millimeter-wave active probe

Science.gov (United States)

Majidi-Ahy, Gholamreza; Bloom, David M.

1991-01-01

A millimeter-wave active probe for use in injecting signals with frequencies above 50GHz to millimeter-wave and ultrafast devices and integrated circuits including a substrate upon which a frequency multiplier consisting of filter sections and impedance matching sections are fabricated in uniplanar transmission line format. A coaxial input and uniplanar 50 ohm transmission line couple an approximately 20 GHz input signal to a low pass filter which rolls off at approximately 25 GHz. An input impedance matching section couples the energy from the low pass filter to a pair of matched, antiparallel beam lead diodes. These diodes generate odd-numberd harmonics which are coupled out of the diodes by an output impedance matching network and bandpass filter which suppresses the fundamental and third harmonics and selects the fifth harmonic for presentation at an output.

Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

Science.gov (United States)

Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

2000-10-01

A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Science.gov (United States)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Multistability in Chua's circuit with two stable node-foci

International Nuclear Information System (INIS)

Bao, B. C.; Wang, N.; Xu, Q.; Li, Q. D.

2016-01-01

Only using one-stage op-amp based negative impedance converter realization, a simplified Chua's diode with positive outer segment slope is introduced, based on which an improved Chua's circuit realization with more simpler circuit structure is designed. The improved Chua's circuit has identical mathematical model but completely different nonlinearity to the classical Chua's circuit, from which multiple attractors including coexisting point attractors, limit cycle, double-scroll chaotic attractor, or coexisting chaotic spiral attractors are numerically simulated and experimentally captured. Furthermore, with dimensionless Chua's equations, the dynamical properties of the Chua's system are studied including equilibrium and stability, phase portrait, bifurcation diagram, Lyapunov exponent spectrum, and attraction basin. The results indicate that the system has two symmetric stable nonzero node-foci in global adjusting parameter regions and exhibits the unusual and striking dynamical behavior of multiple attractors with multistability.

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

Energy Technology Data Exchange (ETDEWEB)

Obolenskaya, E. S., E-mail: bess009@mail.ru, E-mail: obolensk@rf.unn.ru; Tarasova, E. A.; Churin, A. Yu.; Obolensky, S. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Kozlov, V. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-12-15

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically and experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

International Nuclear Information System (INIS)

Obolenskaya, E. S.; Tarasova, E. A.; Churin, A. Yu.; Obolensky, S. V.; Kozlov, V. A.

2016-01-01

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically and experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.

A new poly-Si TFT compensation pixel circuit employing AC driving mode for AMOLED displays

International Nuclear Information System (INIS)

Song Xiaofeng; Luo Jianguo; Wu Weijing; Peng Junbiao; Zhou Lei; Zhang Lirong

2013-01-01

This paper presents a new poly-Si pixel circuit employing AC driving mode for active matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit, which consists of one driving thin-film transistor (TFT), three switching TFTs, and one storage capacitor, can effectively compensate for the threshold voltage variation in poly-Si and the OLED degradation. As there is no light emission, except for during the emitting period, and a small number of devices used in the proposed pixel circuit, a high contrast ratio and a high pixel aperture ratio can be easily achieved. Simulation results by SMART-SPICE software show that the non-uniformity of the OLED current for the proposed pixel circuit is significantly decreased (< 10%) with an average value of 2.63%, while that of the conventional 2T1C is 103%. Thus the brightness uniformity of AMOLED displays can be improved by using the proposed pixel circuit. (semiconductor integrated circuits)

Design of switched-capacitor filter circuits using low gain amplifiers

CERN Document Server

Serra, Hugo Alexandre de Andrade

2015-01-01

This book describes the design of switched-capacitor filter circuits using low gain amplifiers and demonstrates some techniques that can minimize the effects of parasitic capacitances during the design phase. Focus is given in the design of low-pass and band-pass SC filters, and how higher order filters can be achieved using cascaded biquadratic filter sections. The authors also describe a low voltage implementation of a low-pass SC filter.

High-power non linear frequency converted laser diodes

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

2015-01-01

We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

Science.gov (United States)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

KAUST Repository

Ng, Tien Khee

2012-02-10

A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.

RF and microwave coupled-line circuits

CERN Document Server

Mongia, R K; Bhartia, P; Hong, J; Gupta, K C

2007-01-01

This extensively revised edition of the 1999 Artech House classic, RF and Microwave Coupled-Line Circuits, offers you a thoroughly up-to-date understanding of coupled line fundamentals, explaining their applications in designing microwave and millimeter-wave components used in today's communications, microwave, and radar systems. The Second Edition includes a wealth of new material, particularly relating to applications. You find brand new discussions on a novel simple design technique for multilayer coupled circuits, high pass filters using coupled lines, software packages used for filter des

A TDC integrated circuit for drift chamber readout

International Nuclear Information System (INIS)

Passaseo, M.; Petrolo, E.; Veneziano, S.

1995-01-01

A custom integrated circuit for the measurement of the signal drift-time coming from the KLOE chamber developed by INFN Sezione di Roma is presented. The circuit is a multichannel common start/stop TDC, with 32 channels per chip. The TDC integrated circuit will be developed as a full-custom device in 0.5 μm CMOS technology, with 1 ns LSB realized using a Gray counter working at the frequency of 1 GHz. The circuit is capable of detecting rising/falling edges, with a double edge resolution of 8 ns; the hits are recorded as 16 bit words, hits older than a programmable time window are discarded, if not confirmed by a stop signal. The chip has four event-buffers, which are used only if at least one hit is present in one of the 32 channels. The readout of the data passes through the I/O port at a speed of 33 MHz; empty channels are automatically skipped during the readout phase. (orig.)

A TDC integrated circuit for drift chamber readout

Energy Technology Data Exchange (ETDEWEB)

Passaseo, M. [Istituto Nazionale di Fisica Nucleare, Rome (Italy); Petrolo, E. [Istituto Nazionale di Fisica Nucleare, Rome (Italy); Veneziano, S. [Istituto Nazionale di Fisica Nucleare, Rome (Italy)

1995-12-11

A custom integrated circuit for the measurement of the signal drift-time coming from the KLOE chamber developed by INFN Sezione di Roma is presented. The circuit is a multichannel common start/stop TDC, with 32 channels per chip. The TDC integrated circuit will be developed as a full-custom device in 0.5 {mu}m CMOS technology, with 1 ns LSB realized using a Gray counter working at the frequency of 1 GHz. The circuit is capable of detecting rising/falling edges, with a double edge resolution of 8 ns; the hits are recorded as 16 bit words, hits older than a programmable time window are discarded, if not confirmed by a stop signal. The chip has four event-buffers, which are used only if at least one hit is present in one of the 32 channels. The readout of the data passes through the I/O port at a speed of 33 MHz; empty channels are automatically skipped during the readout phase. (orig.).

Diode readout electronics for beam intensity and position monitors for FELs

International Nuclear Information System (INIS)

Herrmann, S; Hart, P; Freytag, M; Pines, J; Weaver, M; Sapozhnikov, L; Nelson, S; Koglin, J; Carini, G A; Tomada, A; Haller, G

2014-01-01

LCLS uses Intensity-Position Monitors (IPM) to measure intensity and position of the FEL x-ray pulses. The primary beam passes through a silicon nitride film and four diodes, arranged in quadrants, detect the backscattered x-ray photons. The position is derived from the relative intensity of the four diodes, while the sum provides beam intensity information. In contrast to traditional synchrotron beam monitors, where diodes measure a DC current signal, the LCLS beam monitors have to cope with the pulsed nature of the FEL, which requires a large single shot dynamic range. A key component of these beam monitors is the readout electronics. The first generation of beam monitors showed some limitations. A new scheme with upgraded electronics, firmware and software was implemented resulting in a more robust and reliable measuring tool.

Robust Sub-harmonic Mixer at 340 GHz Using Intrinsic Resonances of Hammer-Head Filter and Improved Diode Model

Science.gov (United States)

Wang, Cheng; He, Yue; Lu, Bin; Jiang, Jun; Miao, Li; Deng, Xian-Jin; Xiong, Yong-zhong; Zhang, Jian

2017-11-01

This paper presents a sub-harmonic mixer at 340 GHz based on anti-parallel Schottky diodes (SBDs). Intrinsic resonances in low-pass hammer-head filter have been adopted to enhance the isolation for different harmonic components, while greatly minimizing the transmission loss. The application of new DC grounding structure, impedance matching structure, and suspended micro-strip mitigates the negative influences of fabrication errors from metal cavity, quartz substrate, and micro-assembly. An improved lumped element equivalent circuit model of SBDs guarantees the accuracy of simulation, which takes current-voltage (I/V) behavior, capacitance-voltage (C/V) behavior, carrier velocity saturation, DC series resistor, plasma resonance, skin effect, and four kinds of noise generation mechanisms into consideration thoroughly. The measurement indicates that with local oscillating signal of 2 mW, the lowest double sideband conversion loss is 5.5 dB at 339 GHz; the corresponding DSB noise temperature is 757 K. The 3 dB bandwidth of conversion loss is 50 GHz from 317 to 367 GHz.

Plasma-filled diode experiments on PBFA-II

International Nuclear Information System (INIS)

Renk, T.J.; Rochau, G.E.; McDaniel, D.H.; Moore, W.B.; Zuchowski, N.; Padilla, R.

1987-01-01

The PBFA-II accelerator is designed to use a Plasma Opening Switch (POS) for pulse shaping and voltage multiplication using inductive storage. The vacuum section of the machine consists of a set of short magnetically insulated transmission lines (MITLs) that both act as a voltage adder for series stacking of the pulses out of the 72 parallel plate water lines, and as a 100 nH (total) storage inductor upstream of a biconically shaped POS region. There are two POS plasma injection areas, located above and below an equatorial load, which has consisted of either a short circuit, a blade (electron beam) diode, or an Applied B magnetically insulated ion diode. The POS is designed to conduct up to 6 MA, and open into a 5 ohm diode load in 10 ns or less. Under these conditions, the voltage at the load is predicted to exceed 24 MV. Initial POS experiments using these loads have produced 1) opening times of typically 20 ns or longer, 2) poor current transfer efficiency (less than 50%) when load impedances averaged 2 ohms or more, and 3) differential switch opening in azimuthal segments of the power feed, thought to be caused by poor plasma uniformity across the flashboard plasma source. One possible explanation for 2) is that efficient transfer out of the POS requires that the current carried to the load be magnetically insulated, or else considerable energy will be deposited in the feed region between the POS and load. This had indeed been observed. The problem is further exacerbated by the longer current turn-on times that occur when an ion diode is used as the load

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

Science.gov (United States)

Buehler, M. G. (Inventor)

1985-01-01

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Method and apparatus for in-system redundant array repair on integrated circuits

Science.gov (United States)

Bright, Arthur A.; Crumley, Paul G.; Dombrowa, Marc B.; Douskey, Steven M.; Haring, Rudolf A.; Oakland, Steven F.; Ouellette, Michael R.; Strissel, Scott A.

2007-12-18

Disclosed is a method of repairing an integrated circuit of the type comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The method comprises the steps of providing the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The method comprises the further step of, at a given time, passing the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

Method and apparatus for in-system redundant array repair on integrated circuits

Science.gov (United States)

Bright, Arthur A [Croton-on-Hudson, NY; Crumley, Paul G [Yorktown Heights, NY; Dombrowa, Marc B [Bronx, NY; Douskey, Steven M [Rochester, MN; Haring, Rudolf A [Cortlandt Manor, NY; Oakland, Steven F [Colchester, VT; Ouellette, Michael R [Westford, VT; Strissel, Scott A [Byron, MN

2008-07-29

Disclosed is a method of repairing an integrated circuit of the type comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The method comprises the steps of providing the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The method comprises the further step of, at a given time, passing the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

Periodicity, chaos, and multiple attractors in a memristor-based Shinriki's circuit

Energy Technology Data Exchange (ETDEWEB)

Kengne, J. [Laboratory of Automation and Applied Computer (LAIA), Department of Electrical Engineering, IUT-FV Bandjoun, University of Dschang, Dschang (Cameroon); Njitacke Tabekoueng, Z.; Kamdoum Tamba, V.; Nguomkam Negou, A. [Laboratory of Automation and Applied Computer (LAIA), Department of Electrical Engineering, IUT-FV Bandjoun, University of Dschang, Dschang (Cameroon); Department of Physics, Laboratory of Electronics and Signal Processing (LETS), Faculty of Science, University of Dschang, Dschang (Cameroon)

2015-10-15

In this contribution, a novel memristor-based oscillator, obtained from Shinriki's circuit by substituting the nonlinear positive conductance with a first order memristive diode bridge, is introduced. The model is described by a continuous time four-dimensional autonomous system with smooth nonlinearities. The basic dynamical properties of the system are investigated including equilibria and stability, phase portraits, frequency spectra, bifurcation diagrams, and Lyapunov exponents' spectrum. It is found that in addition to the classical period-doubling and symmetry restoring crisis scenarios reported in the original circuit, the memristor-based oscillator experiences the unusual and striking feature of multiple attractors (i.e., coexistence of a pair of asymmetric periodic attractors with a pair of asymmetric chaotic ones) over a broad range of circuit parameters. Results of theoretical analyses are verified by laboratory experimental measurements.

Electron diode oscillators for high-power RF generation

International Nuclear Information System (INIS)

Humphries, S.

1989-01-01

Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

Fully Solution-Processable Fabrication of Multi-Layered Circuits on a Flexible Substrate Using Laser Processing

Directory of Open Access Journals (Sweden)

Seok Young Ji

2018-02-01

Full Text Available The development of printing technologies has enabled the realization of electric circuit fabrication on a flexible substrate. However, the current technique remains restricted to single-layer patterning. In this paper, we demonstrate a fully solution-processable patterning approach for multi-layer circuits using a combined method of laser sintering and ablation. Selective laser sintering of silver (Ag nanoparticle-based ink is applied to make conductive patterns on a heat-sensitive substrate and insulating layer. The laser beam path and irradiation fluence are controlled to create circuit patterns for flexible electronics. Microvia drilling using femtosecond laser through the polyvinylphenol-film insulating layer by laser ablation, as well as sequential coating of Ag ink and laser sintering, achieves an interlayer interconnection between multi-layer circuits. The dimension of microvia is determined by a sophisticated adjustment of the laser focal position and intensity. Based on these methods, a flexible electronic circuit with chip-size-package light-emitting diodes was successfully fabricated and demonstrated to have functional operations.

Fully Solution-Processable Fabrication of Multi-Layered Circuits on a Flexible Substrate Using Laser Processing

Science.gov (United States)

Ji, Seok Young; Choi, Wonsuk; Jeon, Jin-Woo; Chang, Won Seok

2018-01-01

The development of printing technologies has enabled the realization of electric circuit fabrication on a flexible substrate. However, the current technique remains restricted to single-layer patterning. In this paper, we demonstrate a fully solution-processable patterning approach for multi-layer circuits using a combined method of laser sintering and ablation. Selective laser sintering of silver (Ag) nanoparticle-based ink is applied to make conductive patterns on a heat-sensitive substrate and insulating layer. The laser beam path and irradiation fluence are controlled to create circuit patterns for flexible electronics. Microvia drilling using femtosecond laser through the polyvinylphenol-film insulating layer by laser ablation, as well as sequential coating of Ag ink and laser sintering, achieves an interlayer interconnection between multi-layer circuits. The dimension of microvia is determined by a sophisticated adjustment of the laser focal position and intensity. Based on these methods, a flexible electronic circuit with chip-size-package light-emitting diodes was successfully fabricated and demonstrated to have functional operations. PMID:29425144

Frequency and voltage dependent electrical responses of poly(triarylamine thin film-based organic Schottky diode

Directory of Open Access Journals (Sweden)

Mohamad Khairul Anuar

2017-01-01

Full Text Available A metal-organic-metal (MOM type Schottky diode based on poly (triarylamine (PTAA thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f and capacitance-voltage (C-V-f characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit. Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz but decreases at high frequency (1 – 10 kHz. The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV−1cm−2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC signal.

Monolithically Integrated Light Feedback Control Circuit for Blue/UV LED Smart Package

NARCIS (Netherlands)

Koladouz Esfahani, Z.; Tohidian, M.; van Zeijl, H.W.; Kolahdouz, Mohammadreza; Zhang, G.Q.

2017-01-01

Given the performance decay of high-power light-emitting diode (LED) chips over time and package condition changes, having a reliable output light for sensitive applications is a point of concern. In this study, a light feedback control circuit, including blue-selective photodiodes, for

Tunnel diode amplifiers and their background noise as a function of the polarization point, the temperature, and the bandwidth; Amplificateurs a diode tunnel et leur bruit de fond, en fonction du point de polarisation, de la temperature et de la bande passante

Energy Technology Data Exchange (ETDEWEB)

Ozveaminian, K [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

1969-07-01

The author presents mathematical and graphical methods for the study of the stability of tunnel diode circuits. He gives an application to the realization of three amplifiers. Then he describes a theoretical and experimental investigation of the noise of these amplifiers and of its variations with the bias, the temperature and the bandwidth. (author) [French] L'auteur presente deux methodes, l'une theorique l'autre graphique, pour l'etude de la stabilite des circuits a diode tunnel, dont il fait une application a la realisation de trois amplificateurs. Il effectue ensuite une etude theorique et experimentale du bruit de fond de ces amplificateurs, en fonction du point de polarisation, de la temperature et de la bande passante. (auteur)

Compact self-powered synchronous energy extraction circuit design with enhanced performance

Science.gov (United States)

Liu, Weiqun; Zhao, Caiyou; Badel, Adrien; Formosa, Fabien; Zhu, Qiao; Hu, Guangdi

2018-04-01

Synchronous switching circuit is viewed as an effective solution of enhancing the generator’s performance and providing better adaptability for load variations. A critical issue for these synchronous switching circuits is the self-powered realization. In contrast with other methods, the electronic breaker possesses the advantage of simplicity and reliability. However, beside the energy consumption of the electronic breakers, the parasitic capacitance decreases the available piezoelectric voltage. In this technical note, a new compact design of the self-powered switching circuit using electronic breaker is proposed. The envelope diodes are excluded and only a single envelope capacitor is used. The parasitic capacitance is reduced to half with boosted performance while the components are reduced with cost saved.

InGaN/GaN light-emitting diode microwires of submillimeter length

Energy Technology Data Exchange (ETDEWEB)

Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru; Rodin, S. N.; Sakharov, A. V.; Lundina, E. Yu. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation); Zadiranov, Yu. M.; Troshkov, S. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Tsatsulnikov, A. F. [Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation)

2017-01-15

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.

DC Analysis of an Ideal Diode Network Using Its Decomposed Piecevise-Linear Model

Directory of Open Access Journals (Sweden)

Z. Kolka

1994-09-01

Full Text Available A new method of finding the operating points in circuits containing ideal diodes which utilizes the decomposed form of the state model of an one-dimensional piecewise-linear (PWL system is developed. The universal procedure shown gives all the existing solutions quite automatically.

Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

Energy Technology Data Exchange (ETDEWEB)

Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

2016-12-01

Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

International Nuclear Information System (INIS)

Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

2016-01-01

Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

Composite dynamical behaviors in a simple series–parallel LC circuit

International Nuclear Information System (INIS)

Manimehan, I.; Philominathan, P.

2012-01-01

Highlights: ► We have presented a simple circuit exhibiting rich dynamical behaviors. ► The detailed study of the circuit is given by two parameter bifurcation diagram. ► The numerical, analytical and experimental results are good in agreement. ► The Chosen system seems to have potential application in future. - Abstract: In this paper, we report a variety of dynamical behaviors exhibited in a compact series–parallel LC circuit system comprising of two active elements, one linear negative conductance and one ordinary junction diode with piecewise linear v − i characteristics. For convenience, we consider the amplitude (E f ) and frequency (f) of the driving force as control parameters amongst various other parameters. We observe the phenomenon of antimonotonicity, torus breakdown to chaos, bubbles to chaos, period doubling to chaos and emergence of multiple attractors which follow a progressive sequence, etc. As an overview to understand many more variety of bifurcations and attractors, the construction of two parameter phase diagram is also shown pictorially. The chaotic dynamics of this circuit is realized by laboratory experiment, numerical and analytical investigations and found that the results are in good agreement with each other.

The integrated circuit IC EMP transient state disturbance effect experiment method investigates

International Nuclear Information System (INIS)

Li Xiaowei

2004-01-01

Transient state disturbance characteristic study on the integrated circuit, IC, need from its coupling path outset. Through cable (aerial) coupling, EMP converts to an pulse current voltage and results in the impact to the integrated circuit I/O orifice passing the cable. Aiming at the armament system construction feature, EMP effect to the integrated circuit, IC inside the system is analyzed. The integrated circuit, IC EMP effect experiment current injection method is investigated and a few experiments method is given. (authors)

Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode

International Nuclear Information System (INIS)

Qiao Dayong; Yuan Weizheng; Gao Peng; Yao Xianwang; Zang Bo; Zhang Lin; Guo Hui; Zhang Hongjian

2008-01-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device. (authors)

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

International Nuclear Information System (INIS)

Da-Yong, Qiao; Wei-Zheng, Yuan; Peng, Gao; Xian-Wang, Yao; Bo, Zang; Lin, Zhang; Hui, Guo; Hong-Jian, Zhang

2008-01-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device

Performance potential of low-defect density silicon thin-film solar cells obtained by electron beam evaporation and laser crystallisation

Directory of Open Access Journals (Sweden)

Kim K. H.

2013-01-01

Full Text Available A few microns thick silicon films on glass coated with a dielectric intermediate layer can be crystallised by a single pass of a line-focused diode laser beam. Under favorable process conditions relatively large linear grains with low defect density are formed. Most grain boundaries are defect-free low-energy twin-boundaries. Boron-doped laser crystallised films are processed into solar cells by diffusing an emitter from a phosphorous spin-on-dopant source, measuring up to 539 mV open-circuit voltage prior to metallisation. After applying a point-contact metallisation the best cell achieves 7.8% energy conversion efficiency, open-circuit voltage of 526 mV and short-circuit current of 26 mA/cm2. The efficiency is significantly limited by a low fill-factor of 56% due to the simplified metallisation approach. The internal quantum efficiency of laser crystallised cells is consistent with low front surface recombination. By improving cell metallisation and enhancing light-trapping the efficiencies of above 13% can be achieved.

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-01-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

Study of PIN diode energy traps created by neutrons

International Nuclear Information System (INIS)

Sopko, V; Dammer, J; Sopko, B; Chren, D

2013-01-01

Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

Science.gov (United States)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Analytical study on discrete model of virtual cathode in a high-current diode

International Nuclear Information System (INIS)

Privezentsev, A.P.

1988-01-01

Interest in investigation of virtual cathode dynamics related to the development of high-current accelerator equipment is caused by the possibility of its application for ion collective acceleration in direct high-current electron beams and generation of power electromagnetic radiation. The Hamiltonian form of a plane sheet model for a high-current flux in a plane diode is investigated. Variables used permit to carry out the investigation of dynamics of the virtual cathode flux by the method of coordinate point transformations in a phase space. The necessity of numerical integration of sheet motion equations is dropped out in this case. Analytical solution of the suggested iterative circuit for total flux passage is presented as an example. The solution obtained is equivalent to the known results of the plane diode theory, obtained in the hydrodynamic approximation

Nanomechanical characterization by double-pass force-distance mapping

Energy Technology Data Exchange (ETDEWEB)

Dagdas, Yavuz S; Tekinay, Ayse B; Guler, Mustafa O; Dana, Aykutlu [UNAM Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Necip Aslan, M, E-mail: aykutlu@unam.bilkent.edu.tr [Department of Physics, Istanbul Technical University, Istanbul (Turkey)

2011-07-22

We demonstrate high speed force-distance mapping using a double-pass scheme. The topography is measured in tapping mode in the first pass and this information is used in the second pass to move the tip over the sample. In the second pass, the cantilever dither signal is turned off and the sample is vibrated. Rapid (few kHz frequency) force-distance curves can be recorded with small peak interaction force, and can be processed into an image. Such a double-pass measurement eliminates the need for feedback during force-distance measurements. The method is demonstrated on self-assembled peptidic nanofibers.

Nanomechanical characterization by double-pass force-distance mapping

International Nuclear Information System (INIS)

Dagdas, Yavuz S; Tekinay, Ayse B; Guler, Mustafa O; Dana, Aykutlu; Necip Aslan, M

2011-01-01

We demonstrate high speed force-distance mapping using a double-pass scheme. The topography is measured in tapping mode in the first pass and this information is used in the second pass to move the tip over the sample. In the second pass, the cantilever dither signal is turned off and the sample is vibrated. Rapid (few kHz frequency) force-distance curves can be recorded with small peak interaction force, and can be processed into an image. Such a double-pass measurement eliminates the need for feedback during force-distance measurements. The method is demonstrated on self-assembled peptidic nanofibers.

A miniature microcontroller curve tracing circuit for space flight testing transistors.

Science.gov (United States)

Prokop, N; Greer, L; Krasowski, M; Flatico, J; Spina, D

2015-02-01

This paper describes a novel miniature microcontroller based curve tracing circuit, which was designed to monitor the environmental effects on Silicon Carbide Junction Field Effect Transistor (SiC JFET) device performance, while exposed to the low earth orbit environment onboard the International Space Station (ISS) as a resident experiment on the 7th Materials on the International Space Station Experiment (MISSE7). Specifically, the microcontroller circuit was designed to operate autonomously and was flown on the external structure of the ISS for over a year. This curve tracing circuit is capable of measuring current vs. voltage (I-V) characteristics of transistors and diodes. The circuit is current limited for low current devices and is specifically designed to test high temperature, high drain-to-source resistance SiC JFETs. The results of each I-V data set are transmitted serially to an external telemetered communication interface. This paper discusses the circuit architecture, its design, and presents example results.

Chaotic dynamics with high complexity in a simplified new nonautonomous nonlinear electronic circuit

International Nuclear Information System (INIS)

Arulgnanam, A.; Thamilmaran, K.; Daniel, M.

2009-01-01

A two dimensional nonautonomous dissipative forced series LCR circuit with a simple nonlinear element exhibiting an immense variety of dynamical features is proposed for the first time. Unlike the usual cases of nonlinear element, the nonlinear element used here possesses three segment piecewise linear character with one positive and one negative slope. This nonlinearity is verified to be sufficient to produce chaos with high complexity in many established nonautonomous nonlinear circuits, such as MLC, MLCV, driven Chua, etc., thus indicating an universal behavior similar to the familiar Chua's diode. The dynamics of the proposed circuit is studied experimentally, confirmed numerically, simulated through PSPICE and proved mathematically. An important feature of the circuit is its ability to show dual chaotic behavior.

Increase of the dynamic range of catchup experiments by high-pass filtering

Energy Technology Data Exchange (ETDEWEB)

Erskine, D.J.

1995-08-01

The release-catchup shock experiment is an important tool for measuring the speed of sound in compressed matter. The catchup of the release wave to the leading shock is sensitively detected optically, through an indicating fluid which produces light approximately to the 4th power of the shock pressure. However, this sensitivity demands a dynamic range which exceeds the capabilities of our digitizer. The catchup signature lies at the top of a flat pulse, thus any signal clipping is a catastrophic loss of data. We have invented a simple and accurate method for recording the catchup signature that is insensitive to signal clipping. A high pass circuit prior to the digitizer is used with post experiment integration. The insensitivity to clipping allows recording the catchup signature at higher gain, and thus with an improved signal to noise ratio.

Diagnostic X-Ray dosimeters using standard Float Zone (FZ) and XRA-50 commercial diodes

Energy Technology Data Exchange (ETDEWEB)

Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN-CNEN/SP), São Paulo, SP (Brazil); Barros, Vinicius S.M.; Asfora, Viviane K.; Khoury, Helen J., E-mail: vsmdbarros@gmail.com, E-mail: vikhoury@gmail.com, E-mail: hjkhoury@gmail.com [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Departamento de Física

2017-07-01

The results obtained with a standard float zone (FZ) silicon diode, processed at the Helsinki Institute of Physics, used as on-line diagnostic X-ray dosimeter are described in this work. The device was connected in the short circuit current mode to the input of an integrating electrometer. The response repeatability and the current sensitivity coefficient of the diode were measured with diagnostic X-ray beams in the range of 40-80 kV. The dose-response of the device, evaluated from 10 mGy up to 500 mGy, was linear with high charge sensitivity. Nevertheless, significant energy dependence was observed in the charge sensitivity of FZ device for energies below 70 kV. The dosimetric characteristics of this FZ diode were compared to those of an XRA-50 commercial Si diode, specially designed to X-ray dosimetry. The results obtained with the FZ diode evidenced that it can be an alternative choice for diagnostic X-ray dosimetry, although it needs to be calibrated for individual X-ray beam energies. The studies of long-term stability and the radiation hardness of these diodes are under way. (author)

Diode-laser-pump module with integrated signal ports for pumping amplifying fibers and method

Science.gov (United States)

Savage-Leuchs,; Matthias, P [Woodinville, WA

2009-05-26

Apparatus and method for collimating pump light of a first wavelength from laser diode(s) into a collimated beam within an enclosure having first and second optical ports, directing pump light from the collimated beam to the first port; and directing signal light inside the enclosure between the first and second port. The signal and pump wavelengths are different. The enclosure provides a pump block having a first port that emits pump light to a gain fiber outside the enclosure and that also passes signal light either into or out of the enclosure, and another port that passes signal light either out of or into the enclosure. Some embodiments use a dichroic mirror to direct pump light to the first port and direct signal light between the first and second ports. Some embodiments include a wavelength-conversion device to change the wavelength of at least some of the signal light.

Studies of multiperiodic structures by means of circuits with discrete elements

International Nuclear Information System (INIS)

Tran, D.T.

In modern linear accelerators, magnetrons, and travelling wave tubes, to reduce the beam loading effect and to reconcile the structure efficiency and its sensitiveness to mechanical errors, sophisticated structures are often designed by associating several elementary circuits. Because several pass-bands can interfere, the dispersion properties of such multiband structures were studied. Using matrix calculus and applying the positive real properties of impedance, the behavior of series-coupled and parallel-coupled structures is derived. Forms of dispersion curves of biperiodic, triperiodic structure, deflecting structure, interdigital structure, and others are discussed. Experimental work is presented on a few modern structures to illustrate the theoretical work. A new structure, derived from the organ pipe structure and proposed recently as a variable energy accelerating structure, is discussed, and interdigital structures are considered

New Structure for a Six-Port Reflectometer in Monolithic Microwave Integrated-Circuit Technology

OpenAIRE

Wiedmann , Frank; Huyart , Bernard; Bergeault , Eric; Jallet , Louis

1997-01-01

International audience; This paper presents a new structure for a six-port reflectometer which due to its simplicity can be implemented very easily in monolithic microwave integrated-circuit (MMIC) technology. It uses nonmatched diode detectors with a high input impedance which are placed around a phase shifter in conjunction with a power divider for the reference detector. The circuit has been fabricated using the F20 GaAs process of the GEC–Marconi foundry and operates between 1.3 GHz and 3...

Factors affecting the energy resolution in alpha particle spectrometry with silicon diodes

International Nuclear Information System (INIS)

Camargo, Fabio de.

2005-01-01

In this work are presented the studies about the response of a multi-structure guard rings silicon diode for detection and spectrometry of alpha particles. This ion-implanted diode (Al/p + /n/n + /Al) was processed out of 300 μm thick, n type substrate with a resistivity of 3 kΩ·cm and an active area of 4 mm 2 . In order to use this diode as a detector, the bias voltage was applied on the n + side, the first guard ring was grounded and the electrical signals were readout from the p + side. These signals were directly sent to a tailor made preamplifier, based on the hybrid circuit A250 (Amptek), followed by a conventional nuclear electronic. The results obtained with this system for the direct detection of alpha particles from 241 Am showed an excellent response stability with a high detection efficiency (≅ 100 %). The performance of this diode for alpha particle spectrometry was studied and it was prioritized the influence of the polarization voltage, the electronic noise, the temperature and the source-diode distance on the energy resolution. The results showed that the major contribution for the deterioration of this parameter is due to the diode dead layer thickness (1 μm). However, even at room temperature, the energy resolution (FWHM = 18.8 keV) measured for the 5485.6 MeV alpha particles ( 241 Am) is comparable to those obtained with ordinary silicon barrier detectors frequently used for these particles spectrometry. (author)

Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

Directory of Open Access Journals (Sweden)

Santiago Silvestre

2015-04-01

Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

A digital optical phase-locked loop for diode lasers based on field programmable gate array

Science.gov (United States)

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad2 and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Large-signal modeling method for power FETs and diodes

Energy Technology Data Exchange (ETDEWEB)

Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping, E-mail: sunlu_1019@126.co [School of Electromechanical Engineering, Xidian University, Xi' an 710071 (China)

2009-06-01

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

Large-signal modeling method for power FETs and diodes

International Nuclear Information System (INIS)

Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping

2009-01-01

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

SFG synthesis of general high-order all-pass and all-pole current transfer functions using CFTAs.

Science.gov (United States)

Tangsrirat, Worapong

2014-01-01

An approach of using the signal flow graph (SFG) technique to synthesize general high-order all-pass and all-pole current transfer functions with current follower transconductance amplifiers (CFTAs) and grounded capacitors has been presented. For general nth-order systems, the realized all-pass structure contains at most n + 1 CFTAs and n grounded capacitors, while the all-pole lowpass circuit requires only n CFTAs and n grounded capacitors. The resulting circuits obtained from the synthesis procedure are resistor-less structures and especially suitable for integration. They also exhibit low-input and high-output impedances and also convenient electronic controllability through the g m-value of the CFTA. Simulation results using real transistor model parameters ALA400 are also included to confirm the theory.

SFG Synthesis of General High-Order All-Pass and All-Pole Current Transfer Functions Using CFTAs

Directory of Open Access Journals (Sweden)

Worapong Tangsrirat

2014-01-01

Full Text Available An approach of using the signal flow graph (SFG technique to synthesize general high-order all-pass and all-pole current transfer functions with current follower transconductance amplifiers (CFTAs and grounded capacitors has been presented. For general nth-order systems, the realized all-pass structure contains at most n + 1 CFTAs and n grounded capacitors, while the all-pole lowpass circuit requires only n CFTAs and n grounded capacitors. The resulting circuits obtained from the synthesis procedure are resistor-less structures and especially suitable for integration. They also exhibit low-input and high-output impedances and also convenient electronic controllability through the gm-value of the CFTA. Simulation results using real transistor model parameters ALA400 are also included to confirm the theory.

Intense pulsed light-ion beam generated by planar type self-magnetically insulated diode

International Nuclear Information System (INIS)

Yoshikawa, T.; Masugata, K.; Ito, M.; Matsui, M.; Yatsui, K.

1984-01-01

New type of ion diode named ''Planar Type Self-Magnetically Insulated Diode'' (PSID) has been developed. By using a 1.5-mm-thick-polyethylene sheet as an anode surface, we have obtained Vsub(d) (diode voltage) -- 886 kV, Isub(d) (diode current) -- 180 kA, and Isub(i) (net ion current) -- 52 kA, yielding the diode efficiency of ion production to be -- 30 %. Multiple-shots operation (more than 40 shots) has been possible with good reproducibility in such a relatively high powers above. (author)

Coaxial foilless diode

OpenAIRE

Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

2014-01-01

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

Silicon carbide MOSFET integrated circuit technology

Energy Technology Data Exchange (ETDEWEB)

Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Krishnamurthy, V.; Hennessy, W.; Michon, G. [General Electric Co., Schenectady, NY (United States). Corporate Research and Development Center

1997-07-16

The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the World`s first SiC analog IC - a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included characterization of the SiC/SiO{sub 2} interface using thermally grown oxides: high temperature (350 C) reliability studies of thermally grown oxides: ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes: epitaxial layer characterization: N channel inversion and depletion mode MOSFETs; device isolation methods and finally integrated circuit design, fabrication and testing of the World`s first monolithic SiC operational amplifier IC. These studies defined a SiC n-channel depletion mode MOSFET IC technology and outlined tasks required to improve all types of SiC devices. For instance, high temperature circuit drift instabilities at 350 C were discovered and characterized. This type of instability needs to be understood and resolved because it affects the high temperature reliability of other types of SiC devices. Improvements in SiC wafer surface quality and the use of deposited oxides instead of thermally grown SiO{sub 2} gate dielectrics will probably be required for enhanced reliability. The slow reverse recovery time exhibited by n{sup +}-p diodes formed by N ion implantation is a problem that needs to be resolved for all types of planar bipolar devices. The reproducibility of acceptor implants needs to be improved before CMOS ICs and many types of power device structures will be manufacturable. (orig.) 51 refs.

Electrostatic Discharge Current Linear Approach and Circuit Design Method

Directory of Open Access Journals (Sweden)

Pavlos K. Katsivelis

2010-11-01

Full Text Available The Electrostatic Discharge phenomenon is a great threat to all electronic devices and ICs. An electric charge passing rapidly from a charged body to another can seriously harm the last one. However, there is a lack in a linear mathematical approach which will make it possible to design a circuit capable of producing such a sophisticated current waveform. The commonly accepted Electrostatic Discharge current waveform is the one set by the IEC 61000-4-2. However, the over-simplified circuit included in the same standard is incapable of producing such a waveform. Treating the Electrostatic Discharge current waveform of the IEC 61000-4-2 as reference, an approximation method, based on Prony’s method, is developed and applied in order to obtain a linear system’s response. Considering a known input, a method to design a circuit, able to generate this ESD current waveform in presented. The circuit synthesis assumes ideal active elements. A simulation is carried out using the PSpice software.

Inductive circuit arrangements

International Nuclear Information System (INIS)

Mansfield, Peter; Coxon, R.J.

1987-01-01

A switched coil arrangement is connected in a bridge configuration of four switches S 1 , S 2 , S 3 and S 4 which are each shunted by diodes D 1 , D 2 , D 3 and D 4 so that current can flow in either direction through a coil L depending on the setting of the switches. A capacitor C is connected across the bridge through a switch S 5 to receive the inductive energy stored in coil L on breaking the current flow path through the coil. The electrostatic energy stored in capacitor C can then be used to supply current through the coil in the reverse direction either immediately or after a time delay. Coil L may be a superconductive coil. Losses in the circuit can be made up by a trickle charge of capacitor C from a separate supply V 2 . The device may be used in nuclear magnetic resonance imaging. (author)

Cycles of self-pulsations in a photonic integrated circuit.

Science.gov (United States)

Karsaklian Dal Bosco, Andreas; Kanno, Kazutaka; Uchida, Atsushi; Sciamanna, Marc; Harayama, Takahisa; Yoshimura, Kazuyuki

2015-12-01

We report experimentally on the bifurcation cascade leading to the appearance of self-pulsation in a photonic integrated circuit in which a laser diode is subjected to delayed optical feedback. We study the evolution of the self-pulsing frequency with the increase of both the feedback strength and the injection current. Experimental observations show good qualitative accordance with numerical results carried out with the Lang-Kobayashi rate equation model. We explain the mechanism underlying the self-pulsations by a phenomenon of beating between successive pairs of external cavity modes and antimodes.

Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

KAUST Repository

Shen, Chao

2017-11-30

The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Ooi, Boon S.

2017-01-01

The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

Science.gov (United States)

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Ion diode performance on a positive polarity inductive voltage adder with layered magnetically insulated transmission line flow

International Nuclear Information System (INIS)

Hinshelwood, D. D.; Schumer, J. W.; Allen, R. J.; Commisso, R. J.; Jackson, S. L.; Murphy, D. P.; Phipps, D.; Swanekamp, S. B.; Weber, B. V.; Ottinger, P. F.; Apruzese, J. P.; Cooperstein, G.; Young, F. C.

2011-01-01

A pinch-reflex ion diode is fielded on the pulsed-power machine Mercury (R. J. Allen, et al., 15th IEEE Intl. Pulsed Power Conf., Monterey, CA, 2005, p. 339), which has an inductive voltage adder (IVA) architecture and a magnetically insulated transmission line (MITL). Mercury is operated in positive polarity resulting in layered MITL flow as emitted electrons are born at a different potential in each of the adder cavities. The usual method for estimating the voltage by measuring the bound current in the cathode and anode of the MITL is not accurate with layered flow, and the interaction of the MITL flow with a pinched-beam ion diode load has not been studied previously. Other methods for determining the diode voltage are applied, ion diode performance is experimentally characterized and evaluated, and circuit and particle-in-cell (PIC) simulations are performed. Results indicate that the ion diode couples efficiently to the machine operating at a diode voltage of about 3.5 MV and a total current of about 325 kA, with an ion current of about 70 kA of which about 60 kA is proton current. It is also found that the layered flow impedance of the MITL is about half the vacuum impedance.

Design of Integrated Circuits Approaching Terahertz Frequencies

DEFF Research Database (Denmark)

Yan, Lei

In this thesis, monolithic microwave integrated circuits(MMICs) are presented for millimeter-wave and submillimeter-wave or terahertz(THz) applications. Millimeter-wave power generation from solid state devices is not only crucial for the emerging high data rate wireless communications but also...... heterodyne receivers with requirements of room temperature operation, low system complexity, and high sensitivity, monolithic integrated Schottky diode technology is chosen for the implementation of submillimeterwave components. The corresponding subharmonic mixer and multiplier for a THz radiometer system...

Multistability in Chua's circuit with two stable node-foci

Energy Technology Data Exchange (ETDEWEB)

Bao, B. C.; Wang, N.; Xu, Q. [School of Information Science and Engineering, Changzhou University, Changzhou 213164 (China); Li, Q. D. [Research Center of Analysis and Control for Complex Systems, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China)

2016-04-15

Only using one-stage op-amp based negative impedance converter realization, a simplified Chua's diode with positive outer segment slope is introduced, based on which an improved Chua's circuit realization with more simpler circuit structure is designed. The improved Chua's circuit has identical mathematical model but completely different nonlinearity to the classical Chua's circuit, from which multiple attractors including coexisting point attractors, limit cycle, double-scroll chaotic attractor, or coexisting chaotic spiral attractors are numerically simulated and experimentally captured. Furthermore, with dimensionless Chua's equations, the dynamical properties of the Chua's system are studied including equilibrium and stability, phase portrait, bifurcation diagram, Lyapunov exponent spectrum, and attraction basin. The results indicate that the system has two symmetric stable nonzero node-foci in global adjusting parameter regions and exhibits the unusual and striking dynamical behavior of multiple attractors with multistability.

Fish pass assessment by remote control: a novel framework for quantifying the hydraulics at fish pass entrances

Science.gov (United States)

Kriechbaumer, Thomas; Blackburn, Kim; Gill, Andrew; Breckon, Toby; Everard, Nick; Wright, Ros; Rivas Casado, Monica

2014-05-01

Fragmentation of aquatic habitats can lead to the extinction of migratory fish species with severe negative consequences at the ecosystem level and thus opposes the target of good ecological status of rivers defined in the EU Water Framework Directive (WFD). In the UK, the implementation of the EU WFD requires investments in fish pass facilities of estimated 532 million GBP (i.e. 639 million Euros) until 2027 to ensure fish passage at around 3,000 barriers considered critical. Hundreds of passes have been installed in the past. However, monitoring studies of fish passes around the world indicate that on average less than half of the fish attempting to pass such facilities are actually successful. There is a need for frameworks that allow the rapid identification of facilities that are biologically effective and those that require enhancement. Although there are many environmental characteristics that can affect fish passage success, past research suggests that variations in hydrodynamic conditions, reflected in water velocities, velocity gradients and turbulences, are the major cues that fish use to seek migration pathways in rivers. This paper presents the first steps taken in the development of a framework for the rapid field-based quantification of the hydraulic conditions downstream of fish passes and the assessment of the attractivity of fish passes for salmonids and coarse fish in UK rivers. For this purpose, a small-sized remote control platform carrying an acoustic Doppler current profiler (ADCP), a GPS unit, a stereo camera and an inertial measurement unit has been developed. The large amount of data on water velocities and depths measured by the ADCP within relatively short time is used to quantify the spatial and temporal distribution of water velocities. By matching these hydraulic features with known preferences of migratory fish, it is attempted to identify likely migration routes and aggregation areas at barriers as well as hydraulic features that

An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

Science.gov (United States)

Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

2016-04-01

Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

Performance of the Main Dipole Magnet Circuits of the LHC during Commissioning

CERN Document Server

Verweij, A; Ballarino, A; Bellesia, B; Bordry, Frederick; Cantone, A; Casas Lino, M; Castaneda Serra, A; Castillo Trello, C; Catalan-Lasheras, N; Charifoulline, Z; Coelingh, G; Dahlerup-Petersen, K; D'Angelo, G; Denz, R; Fehér, S; Flora, R; Gruwé, M; Kain, V; Khomenko, B; Kirby, G; MacPherson, A; Marqueta Barbero, A; Mess, K H; Modena, M; Mompo, R; Montabonnet, V; le Naour, S; Nisbet, D; Parma, V; Pojer, M; Ponce, L; Raimondo, A; Redaelli, S; Reymond, H; Richter, D; de Rijk, G; Rijllart, A; Romera Ramirez, I; Saban, R; Sanfilippo, S; Schmidt, R; Siemko, A; Solfaroli Camillocci, M; Thurel, Y; Thiessen, H; Venturini-Delsolaro, W; Vergara Fernandez, A; Wolf, R; Zerlauth, M

2008-01-01

During hardware commissioning of the Large Hadron Collider (LHC), 8 main dipole circuits are tested at 1.9 K and up to their nominal current. Each dipole circuit contains 154 magnets of 15 m length, and has a total stored energy of up to 1.3 GJ. All magnets are wound from Nb-Ti superconducting Rutherford cables, and contain heaters to quickly force the transition to the normal conducting state in case of a quench, and hence reduce the hot spot temperature. In this paper the performance of the first three of these circuits is presented, focussing on quench detection, heater performance, operation of the cold bypass diodes, and magnet-to-magnet quench propagation. The results as measured on the entire circuits will be compared to the test results obtained during the reception tests of the individual magnets.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

Science.gov (United States)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

The design and manufacture of a notch structure for a planar InP Gunn diode

International Nuclear Information System (INIS)

Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

2013-01-01

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

New pixel circuit compensating poly-si TFT threshold-voltage shift for a driving AMOLED

International Nuclear Information System (INIS)

Fan, C. L.; Lin, Y. Y.; Lin, B. S.; Chang, J. Y.; Fan, C. L.; Chang, H. C.

2010-01-01

This study presents a novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to simplify the fabrication process of active matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit consists of five switching TFTs, one driving TFT (DTFT), and two capacitors. The output current and the OLED anode voltage error rates are about 3% and 0.7%, respectively. Thus, the pixel circuit can realize uniform output current with high immunity to the poly-Si TFT threshold voltage deviation. The proposed novel pixel design has great potential for use in large-size, high-resolution AMOLED displays.

An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

2017-01-01

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

A low-power, CMOS peak detect and hold circuit for nuclear pulse spectroscopy

International Nuclear Information System (INIS)

Ericson, M.N.; Simpson, M.L.; Britton, C.L.; Allen, M.D.; Kroeger, R.A.; Inderhees, S.E.

1994-01-01

A low-power CMOS peak detecting track and hold circuit optimized for nuclear pulse spectroscopy is presented. The circuit topology eliminates the need for a rectifying diode, reducing the effect of charge injection into the hold capacitor, incorporates a linear gate at the input to prevent pulse pileup, and uses dynamic bias control that minimizes both pedestal and droop. Both positive-going and negative-going pulses are accommodated using a complementary set of track and hold circuits. Full characterization of the design fabricated in 1.2μm CMOS including dynamic range, integral nonlinearity, droop rate, pedestal, and power measurements is presented. Additionally, analysis and design approaches for optimization of operational characteristics are discussed

A digital optical phase-locked loop for diode lasers based on field programmable gate array

Energy Technology Data Exchange (ETDEWEB)

Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui [Physics Department, Zhejiang University, Hangzhou, 310027 (China)

2012-09-15

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

A self-powered piezoelectric energy harvesting interface circuit with efficiency-enhanced P-SSHI rectifier

Science.gov (United States)

Liu, Lianxi; Pang, Yanbo; Yuan, Wenzhi; Zhu, Zhangming; Yang, Yintang

2018-04-01

The key to self-powered technique is initiative to harvest energy from the surrounding environment. Harvesting energy from an ambient vibration source utilizing piezoelectrics emerged as a popular method. Efficient interface circuits become the main limitations of existing energy harvesting techniques. In this paper, an interface circuit for piezoelectric energy harvesting is presented. An active full bridge rectifier is adopted to improve the power efficiency by reducing the conduction loss on the rectifying path. A parallel synchronized switch harvesting on inductor (P-SSHI) technique is used to improve the power extraction capability from piezoelectric harvester, thereby trying to reach the theoretical maximum output power. An intermittent power management unit (IPMU) and an output capacitor-less low drop regulator (LDO) are also introduced. Active diodes (AD) instead of traditional passive ones are used to reduce the voltage loss over the rectifier, which results in a good power efficiency. The IPMU with hysteresis comparator ensures the interface circuit has a large transient output power by limiting the output voltage ranges from 2.2 to 2 V. The design is fabricated in a SMIC 0.18 μm CMOS technology. Simulation results show that the flipping efficiency of the P-SSHI circuit is over 80% with an off-chip inductor value of 820 μH. The output power the proposed rectifier can obtain is 44.4 μW, which is 6.7× improvement compared to the maximum output power of a traditional rectifier. Both the active diodes and the P-SSHI help to improve the output power of the proposed rectifier. LDO outputs a voltage of 1.8 V with the maximum 90% power efficiency. The proposed P-SSHI rectifier interface circuit can be self-powered without the need for additional power supply. Project supported by the National Natural Science Foundation of China (Nos. 61574103, U1709218) and the Key Research and Development Program of Shaanxi Province (No. 2017ZDXM-GY-006).

Extraction magnetically insulated diode studies on Gamble II

International Nuclear Information System (INIS)

Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Stephanakis, S.J.; Greenly, J.

1993-01-01

An extraction Magnetically Insulated Diode (MID) with anode and cathode magnetic field coils has been tested on the NRL Gamble II accelerator. The purpose of the experiments is to develop an annular, intense ion beam source for testing ion beam transport physics related to light ion inertial confinement fusion. Initial experiments have been performed with surface flashover ion sources. The experimental challenge has been to obtain a tuning of the 4 magnetic field coils that results in a minimum turn-on time of the ion source and acceptable coupling to the accelerator. Results from several different geometries of magnetic field will be presented. The principal diode diagnostics are the total diode current, net ion current, and corrected diode voltage. Calculations of the magnetic field strength and geometry are performed with the ATHETA code. An active anode ion source is also under development. The initial portion of the accelerator pulse is diverted with a plasma opening switch (POS) and passed through a thin foil that will become the ion source. The foil is swiftly heated by the current pulse and gas is desorbed or diffused from the foil into the anode-cathode gap. The gas is then broken down by the current pulse, forming a dense plasma source on the anode surface. Two different foils are being used. A thin aluminum foil will work with desorbed gases, and provide a beam that is predominately protons. A hydrogen loaded titanium foil, with a paladium overcoating, will use diffused hydrogen, and produce a high purity proton beam. The net result of the POS and active anode plasma source should be much faster ion turn-on time, and better coupling of the ion source to the accelerator. Preliminary results with the active anode sources will be presented

Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

Energy Technology Data Exchange (ETDEWEB)

Ren, Jie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Li, Nianbei [Tongji Univ., Shanghai Shi (China)

2014-02-18

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study how to design the novel wave diode devices to realize the non-reciprocal wave propagations. Analytical results reveal that such non-reciprocal wave propagation can be purely induced by asymmetric geometry in nonlinear materials. The detailed numerical simulations are performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect has been demonstrated. The results open a way for making wave diodes efficiently simply through shape engineering.

CHARACTERISTICS OF A 4-PHASE VALVE RELUCTANCE MOTOR WHEN POWERED BY UNCAPACITOR SWITCHBOARD

Directory of Open Access Journals (Sweden)

V.B. Finkelshtein

2016-06-01

Full Text Available Purpose. Nowadays more and more in a variety of machines and mechanisms applied switched reluctance motor. When designing these engines solve the problem selection switch. While the switch scheme comprises symmetrical bridge and eight transistors, eight diodes; Miller switch comprises six transistors and six diodes; in company Graseby Controls Ltd switch circuit but four transistors and four diodes includes two capacitors. The aim is to develop a mathematical model, calculation program, a numerical analysis of the characteristics and parameters of the WFD and the characteristics of their work. Methodology. It is assumed that the resistance in the open state transistors and diodes for direct current is zero and the resistance of the transistors in the closed state, and diode reverse voltage is infinity. When feeding a single-phase motor and power at the same time two adjacent phases determined by the flow through the tooth. Results. The motor powered by a switch on the circuit symmetrical bridge power, which provides a maximum permissible winding temperature is 1.665 kW. But at the same time the surge up to 38.8%, resulting in high levels of noise and vibration. Through the installation of switching angles, ensuring reduction of torque ripple and reduce engine power to a level below which there is a decrease in the value of torque ripple, received power of 1,066 kW and a torque ripple value of 21.18 %. For engines with improved vibration acoustic characteristics necessary to use a switch of four transistors and four diodes. Practical value. For motors with improved vibration acoustic characteristics appropriate to apply uncapacitor switch on four transistors and four diodes, which allows you to receive half the value of torque ripple than the lowest value of the motor torque ripple, eating from a switch on the circuit asymmetric bridge. The cost of reluctance motor with uncapacitor switch on the circuit with four transistors and four diodes is

Modified Single Photo-diode (MSPD) Detection Technique for SAC-OCDMA System

Science.gov (United States)

Abdulqader, Sarah G.; Fadhil, Hilal A.; Aljunid, S. A.

2015-03-01

In this paper, a new detection technique called modified single photo-diode (MSPD) detection for SAC-OCDMA system is proposed. The proposed system based on the single photo-diode (SPD) detection technique. The new detection technique is proposed to overcome the limitation of phase-induced intensity noise (PIIN) in SPD detection technique. However, the proposed detection is based on an optical hard limiter (OHL) followed by a SPD and a low-pass filter (LPF) in order to suppress the phase intensity noise (PIIN) at the receiver side. The results show that the MSPD detection based on OHL has a good performance even when the transmission distance is long, which is different from the case of SPD detection technique. Therefore, the MSPD detection technique is shown to be effective to improve the bit error rate (BER<10-9) and to suppress the noise in the practical optical fiber network.

Coaxial foilless diode

Energy Technology Data Exchange (ETDEWEB)

Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-05-15

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Jensen, Ole Bjarlin; Sumpf, Bernd

2014-01-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear...... frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re...... power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications...

Statistics of Epidemics in Networks by Passing Messages

Science.gov (United States)

Shrestha, Munik Kumar

Epidemic processes are common out-of-equilibrium phenomena of broad interdisciplinary interest. In this thesis, we show how message-passing approach can be a helpful tool for simulating epidemic models in disordered medium like networks, and in particular for estimating the probability that a given node will become infectious at a particular time. The sort of dynamics we consider are stochastic, where randomness can arise from the stochastic events or from the randomness of network structures. As in belief propagation, variables or messages in message-passing approach are defined on the directed edges of a network. However, unlike belief propagation, where the posterior distributions are updated according to Bayes' rule, in message-passing approach we write differential equations for the messages over time. It takes correlations between neighboring nodes into account while preventing causal signals from backtracking to their immediate source, and thus avoids "echo chamber effects" where a pair of adjacent nodes each amplify the probability that the other is infectious. In our first results, we develop a message-passing approach to threshold models of behavior popular in sociology. These are models, first proposed by Granovetter, where individuals have to hear about a trend or behavior from some number of neighbors before adopting it themselves. In thermodynamic limit of large random networks, we provide an exact analytic scheme while calculating the time dependence of the probabilities and thus learning about the whole dynamics of bootstrap percolation, which is a simple model known in statistical physics for exhibiting discontinuous phase transition. As an application, we apply a similar model to financial networks, studying when bankruptcies spread due to the sudden devaluation of shared assets in overlapping portfolios. We predict that although diversification may be good for individual institutions, it can create dangerous systemic effects, and as a result

Performance of the Superconducting Corrector Magnet Circuits during the Commissioning of the LHC

CERN Document Server

Venturini-Delsolaro, W; Ballarino, A; Bellesia, B; Bordry, Frederick; Cantone, A; Casas Lino, M; Castaneda Serra, A; Castillo Trello, C; Catalan-Lasheras, N; Charifoulline, Z; Charrondiere, C; Dahlerup-Petersen, K; D'Angelo, G; Denz, R; Fehér, S; Flora, R; Gruwé, M; Kain, V; Karppinen, M; Khomenko, B; Kirby, G; MacPherson, A; Marqueta Barbero, A; Mess, K H; Modena, M; Mompo, R; Montabonnet, V; le Naour, S; Nisbet, D; Parma, V; Pojer, M; Ponce, L; Raimondo, A; Redaelli, S; Remondino, V; Reymond, H; de Rijk, G; Rijllart, A; Romera Ramirez, I; Saban, R; Sanfilippo, S; Schirm, K; Schmidt, R; Siemko, A; Solfaroli Camillocci, M; Thurel, Y; Thiesen, H; Vergara Fernandez, A; Verweij, A; Wolf, R; Zerlauth, M

2008-01-01

The LHC is a complex machine requiring more than 7400 superconducting corrector magnets distributed along a circumference of 26.7 km. These magnets are powered in 1446 different electrical circuits at currents ranging from 60 A up to 600 A. Among the corrector circuits the 600 A corrector magnets form the most diverse and differentiated group. All together, about 60000 high current connections had to be made. A fault in a circuit or one of the superconducting connections would have severe consequences for the accelerator operation. All magnets are wound from various types of Nb-Ti superconducting strands, and many contain parallel protection resistors to by-pass the current still flowing in the other magnets of the same circuit when they quench. In this paper the performance of these magnet circuits is presented, focussing on the quench behaviour of the magnets. Quench detection and the performance of the electrical interconnects will be dealt with. The results as measured on the entire circuits are compar...

Pulse generator circuit triggerable by nuclear radiation

International Nuclear Information System (INIS)

Fredrickson, P.B.

1980-01-01

A pulse generator circuit triggerable by a pulse of nuclear radiation is described. The pulse generator circuit includes a pair of transistors arranged, together with other electrical components, in the topology of a standard monostable multivibrator circuit. The circuit differs most significantly from a standard monostable multivibrator circuit in that the circuit is adapted to be triggered by a pulse of nuclear radiation rather than electrically and the transistors have substantially different sensitivities to radiation, due to different physical and electrical characteristics and parameters. One of the transistors is employed principally as a radiation detector and is in a normally non-conducting state and the other transistor is normally in a conducting state. When the circuit is exposed to a pulse of nuclear radiation, currents are induced in the collector-base junctions of both transistors but, due to the different radiation sensitivities of the transistors, the current induced in the collector-base junction of the radiation-detecting transistor is substantially greater than that induced in the collector-base junction of the other transistor. The pulse of radiation causes the radiation-detecting transistor to operate in its conducting state, causing the other transistor to operate in its non-conducting state. As the radiation-detecting transistor operates in its conducting state, an output signal is produced at an output terminal connected to the radiation-detecting transistor indicating the presence of a predetermined intensity of nuclear radiation

Nanofluidic Transistor Circuits

Science.gov (United States)

Chang, Hsueh-Chia; Cheng, Li-Jing; Yan, Yu; Slouka, Zdenek; Senapati, Satyajyoti

2012-02-01

Non-equilibrium ion/fluid transport physics across on-chip membranes/nanopores is used to construct rectifying, hysteretic, oscillatory, excitatory and inhibitory nanofluidic elements. Analogs to linear resistors, capacitors, inductors and constant-phase elements were reported earlier (Chang and Yossifon, BMF 2009). Nonlinear rectifier is designed by introducing intra-membrane conductivity gradient and by asymmetric external depletion with a reverse rectification (Yossifon and Chang, PRL, PRE, Europhys Lett 2009-2011). Gating phenomenon is introduced by functionalizing polyelectrolytes whose conformation is field/pH sensitive (Wang, Chang and Zhu, Macromolecules 2010). Surface ion depletion can drive Rubinstein's microvortex instability (Chang, Yossifon and Demekhin, Annual Rev of Fluid Mech, 2012) or Onsager-Wien's water dissociation phenomenon, leading to two distinct overlimiting I-V features. Bipolar membranes exhibit an S-hysteresis due to water dissociation (Cheng and Chang, BMF 2011). Coupling the hysteretic diode with some linear elements result in autonomous ion current oscillations, which undergo classical transitions to chaos. Our integrated nanofluidic circuits are used for molecular sensing, protein separation/concentration, electrospray etc.

Coaxial foilless diode

Directory of Open Access Journals (Sweden)

Long Kong

2014-05-01

Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

International Nuclear Information System (INIS)

Cheng Zai-Jun; San Hai-Sheng; Chen Xu-Yuan; Liu Bo; Feng Zhi-Hong

2011-01-01

A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm 2 planar solid 63 Ni source with an activity of 2 mCi, the open-circuit voltage V oc of the fabricated single 2×2mm 2 cell reaches as high as 1.62 V, the short-circuit current density J sc is measured to be 16nA/cm 2 . The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices. (cross-disciplinary physics and related areas of science and technology)

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser.

Science.gov (United States)

Liu, Ying; Gao, Jie; Gao, Yan; Xu, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm(2); Group B: 2 W/CW (continuous mode), 166 J/cm(2); Group C: 3W/CW, 250 J/cm(2); and Group D: 4W/CW, 333 J/cm(2). Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm(2); and Group F: 2.0 W/CW, 166 J/cm(2). The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm(2)) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue.

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser

Science.gov (United States)

Liu, Ying; Gao, Jie; Gao, Yan; XU, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

Introduction: To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Methods: Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm2; Group B: 2 W/CW (continuous mode), 166 J/cm2; Group C: 3W/CW, 250 J/cm2; and Group D: 4W/CW, 333 J/cm2. Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm2; and Group F: 2.0 W/CW, 166 J/cm2. The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. Results: The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Conclusions: Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm2) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue. PMID:25606318

Ultra-wideband balanced schottky envelope detector for data communication with high bitrate to carrier frequency ratio

DEFF Research Database (Denmark)

Granja, Angel Blanco; Cimoli, Bruno; Rodriguez, Sebastian

2017-01-01

This paper reports on an ultra-wideband (UWB) Schottky diode based balanced envelope detector for the L-, S-, C- and X- bands. The proposed circuit consists of a balun that splits the input signal into two 180° out of phase signals, a balanced detector, that demodulates the two signals, a low pass...

The waffle: a new photovoltaic diode geometry having high efficiency and backside contacts

DEFF Research Database (Denmark)

Leistiko, Otto

1994-01-01

By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing...... these processing techniques are described. This novel device has not only high efficiency, but also has both contacts placed on the backside of the cell. The first devices which are only 50 mm in diameter are of relatively good quality with low leakage currents (nA), high breakdown voltages (80 V), and low series...... resistance (mohms). The measured efficiencies at AM 1.5 lie between 12 to 15% with short circuit currents of 25-30 mA/cm2, and open circuit voltages of 0.58-0.6 V...

Dynamics of a relativistic electron beam in a high-current diode with a knife-edge cathode

International Nuclear Information System (INIS)

Babykin, V.M.; Gordeev, A.V.; Golovin, G.T.; Korolev, V.D.; Kopchikov, A.V.; Tulupov, M.V.; Chernenko, A.S.; Shuvaev, V.Yu.

1991-01-01

For a number of practical applications, e.g., producing discharges in large volumes in order to pump gas lasers and for short x-ray pulses, it is necessary to generate electron beams in megamp range with electron energies from hundreds of kilovolts to several megavolts. It has been possible to obtain high currents (I ± 1 MA) by using diodes with knife-edge cathodes. Knife-edge diodes have an important advantage over the parapotential type because the ion current in them comprises a relatively small fraction of the total current. This is because the electron path in the accelerating gap of knife-edge diodes is quite short in comparison with that in high-current parapotential diodes. From the point of view of applying ribbon-shaped or narrow electron beams, the important problems are in measuring the current-voltage characteristics of the diodes and determining the dynamics of the energy spectrum and the angular spread of the electrons. The generation of an electron beam with a current ∼130 kA and pulse length ∼60 ns is studied. The current-voltage characteristics of knife-edge diodes with various geometries, the dynamics of the angular spread, and the beam structure are studied. As a result of the study of the REB dynamics it is found that the operation of the diode with these experiments can be approximated by a proposed formula which includes the finite thickness of the knife-edge cathode and the motion of the plasma and ions in the discharge gap. Breaking up of the beam into individual current-carrying channels is observed with the characteristic scale ∼1-2 mm. It is noted that for the diode geometry with a knife-edge cathode, when the magnetic field changes sign and passes through zero, an instability can exist which is analogous to the dissipative tearing instability

Low level diode laser accelerates wound healing.

Science.gov (United States)

Dawood, Munqith S; Salman, Saif Dawood

2013-05-01

The effect of wound illumination time by pulsed diode laser on the wound healing process was studied in this paper. For this purpose, the original electronic drive circuit of a 650-nm wavelength CW diode laser was reconstructed to give pulsed output laser of 50 % duty cycle and 1 MHz pulse repetition frequency. Twenty male mice, 3 months old were used to follow up the laser photobiostimulation effect on the wound healing progress. They were subdivided into two groups and then the wounds were made on the bilateral back sides of each mouse. Two sessions of pulsed laser therapy were carried along 15 days. Each mice group wounds were illuminated by this pulsed laser for 12 or 18 min per session during these 12 days. The results of this study were compared with the results of our previous wound healing therapy study by using the same type of laser. The mice wounds in that study received only 5 min of illumination time therapy in the first and second days of healing process. In this study, we found that the wounds, which were illuminated for 12 min/session healed in about 3 days earlier than those which were illuminated for 18 min/session. Both of them were healed earlier in about 10-11 days than the control group did.

Laser system for testing radiation imaging detector circuits

Science.gov (United States)

Zubrzycka, Weronika; Kasinski, Krzysztof

2015-09-01

Performance and functionality of radiation imaging detector circuits in charge and position measurement systems need to meet tight requirements. It is therefore necessary to thoroughly test sensors as well as read-out electronics. The major disadvantages of using radioactive sources or particle beams for testing are high financial expenses and limited accessibility. As an alternative short pulses of well-focused laser beam are often used for preliminary tests. There are number of laser-based devices available on the market, but very often their applicability in this field is limited. This paper describes concept, design and validation of laser system for testing silicon sensor based radiation imaging detector circuits. The emphasis is put on keeping overall costs low while achieving all required goals: mobility, flexible parameters, remote control and possibility of carrying out automated tests. The main part of the developed device is an optical pick-up unit (OPU) used in optical disc drives. The hardware includes FPGA-controlled circuits for laser positioning in 2 dimensions (horizontal and vertical), precision timing (frequency and number) and amplitude (diode current) of short ns-scale (3.2 ns) light pulses. The system is controlled via USB interface by a dedicated LabVIEW-based application enabling full manual or semi-automated test procedures.

FARADAY CUP AWARD: High Sensitivity Tune Measurement using Direct Diode Detection

CERN Document Server

Gasior, M

2012-01-01

Direct Diode Detection (3D) is a technique developed at CERN initially for the LHC tune measurement system, to reach a sensitivity allowing observation of beam betatron oscillations with amplitudes below a micrometre. In this technique simple peak diode detectors are used to convert short beam pulses from a beam position pick-up into slowly varying signals. Their DC components, constituting a large background related to beam offsets, are suppressed by series capacitors, while the small signals related to beam oscillations are passed to the subsequent stages for amplification and filtering. As the demodulated beam oscillation signals are already in the kHz range, their processing is simple and they can be digitised with high resolution audio ADCs. This paper presents the history as well as the adventures of the 3D development and prototyping, along with some technical details. It documents a very efficient collaboration between CERN and Brookhaven National Laboratory (BNL), with contributions from other labora...

Effect of defects on electrical properties of 4H-SiC Schottky diodes

International Nuclear Information System (INIS)

Ben Karoui, M.; Gharbi, R.; Alzaied, N.; Fathallah, M.; Tresso, E.; Scaltrito, L.; Ferrero, S.

2008-01-01

Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging

Foundry fabricated photonic integrated circuit optical phase lock loop.

Science.gov (United States)

Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

2017-07-24

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Clipper circuit of pulse modulator used for klystron-5045 power supply

CERN Document Server

Akimov, A V

2001-01-01

While the operation of modulator to the pulsed transformer of klystron-5045, current through the primary winding of the pulse transformer (PT) continues to flow even upon the end of the klystron voltage operating pulse. This is determined by an energy stored in magnetizing inductance. The prolongation of magnetizing current passing process simultaneously with the premature choking of thyratron can cause high voltage of inverse polarity at the klystron, which cause the destruction of the cathode. We have considered the possibility of shortening time of magnetizing current passage for the charge of reasonable choice of clipper circuit parameters. The behavior of clipper circuit was studied in modulators used for the VEPP-5 (BINP, Russia) preinjector klystron power supply. The optimum operation run of the circuit was selected and its design features are described.

Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

Science.gov (United States)

Villa, E; Aja, B; de la Fuente, L; Artal, E

2016-01-01

This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

Electric Circuit Model Analogy for Equilibrium Lattice Relaxation in Semiconductor Heterostructures

Science.gov (United States)

Kujofsa, Tedi; Ayers, John E.

2018-01-01

The design and analysis of semiconductor strained-layer device structures require an understanding of the equilibrium profiles of strain and dislocations associated with mismatched epitaxy. Although it has been shown that the equilibrium configuration for a general semiconductor strained-layer structure may be found numerically by energy minimization using an appropriate partitioning of the structure into sublayers, such an approach is computationally intense and non-intuitive. We have therefore developed a simple electric circuit model approach for the equilibrium analysis of these structures. In it, each sublayer of an epitaxial stack may be represented by an analogous circuit configuration involving an independent current source, a resistor, an independent voltage source, and an ideal diode. A multilayered structure may be built up by the connection of the appropriate number of these building blocks, and the node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits can easily be extended to the relaxation of strained-layer structures. Furthermore, the electrical circuit model may be extended to continuously-graded epitaxial layers by considering the limit as the individual sublayer thicknesses are diminished to zero. In this paper, we describe the mathematical foundation of the electrical circuit model, demonstrate its application to several representative structures involving In x Ga1- x As strained layers on GaAs (001) substrates, and develop its extension to continuously-graded layers. This extension allows the development of analytical expressions for the strain, misfit dislocation density, critical layer thickness and widths of misfit dislocation free zones for a continuously-graded layer having an arbitrary compositional profile. It is similar to the transition from circuit

Numerical simulation on the energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on diode impedance

International Nuclear Information System (INIS)

Liu Guozhi

2003-01-01

The energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on the impedance of diode are studied numerically in this paper. The results show that the beam generated by the diode has an energy spread, even with constant applied voltage. Additionally, external magnetic field has great but reverse influence on the impedance of low-impedance diode, which is, according to the author's analysis, the result of the change of the electron's track due to external magnetic field. If the beam current is less than the critical one for self-pinch, the impedance will be constant with the variation of external magnetic field

A New Resonant Capacitor Diode Voltage Multiplier Topology for Pulsed Power Application

Directory of Open Access Journals (Sweden)

Mohammad Kebriaei

2017-09-01

Full Text Available Today, the pulsed power systems have been employed in many applications. To meet the requirement of user, the pulse generator should enjoy the advantages of compactness, high flexibility, high pulse repetition rate and cost efficiency. Among all of converters that can be used to generate high voltage pulses, capacitance diode voltage multiplier (CDVM is a good candidate to meet the mentioned requirements. In this paper a new converter that is combination of full-bridge inverter, CDVM and resonant circuit is proposed. The performance of developed converter is compared with the conventional circuits and is demonstrated via simulation in MATLAB/SIMULINK. Experimental tests on a prototype setup have verified the capability of this topology.

Spectroscopic amplifier for pin diode

International Nuclear Information System (INIS)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

2014-10-01

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

SEMICONDUCTOR INTEGRATED CIRCUITS: An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

Science.gov (United States)

Fangxiong, Chen; Min, Lin; Heping, Ma; Hailong, Jia; Yin, Shi; Forster, Dai

2009-08-01

An asymmetric MOSFET-C band-pass filter (BPF) with on chip charge pump auto-tuning is presented. It is implemented in UMC (United Manufacturing Corporation) 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point (IIP3) is 16.621 dBm, with 50 Ω as the source impedance. The input referred noise is about 47.455 μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm2 and it can be utilized in GPS (global positioning system) and Bluetooth systems.

A novel SFG structure for C-T high-pass filters

DEFF Research Database (Denmark)

Nielsen, Ivan Riis

1993-01-01

A signal flow graph (SFG) structure for simulating passive high-pass ladder filters, called the incremental integration structure, is proposed. The structure requires the use of integrators with nonintegrating inputs, and an implementation based on the MOSFET-C technique is discussed. The increme......A signal flow graph (SFG) structure for simulating passive high-pass ladder filters, called the incremental integration structure, is proposed. The structure requires the use of integrators with nonintegrating inputs, and an implementation based on the MOSFET-C technique is discussed....... The incremental integration structure is compared to the leapfrog and direct SFG simulation structures. Leapfrog high-pass filters are relatively simple and show good noise properties, but they are based on differentiators and thus stability problems exist. The direct SFG simulation method is based on integrators...... and has good stability properties, but it leads to a relatively high circuit complexity and a high noise level. However, the incremental integration structure inherits the low-noise properties of the leapfrog structure and the good stability of the direct SFG simulation method. A sixth-order elliptic high...

Electron inertia effects for an electron fluid model by the applied-B ion diode

Energy Technology Data Exchange (ETDEWEB)

Gordeev, A V; Levchenko, S V [Kurchatov Institute, Moscow (Russian Federation). Nuclear Fusion Institute

1997-12-31

Numerical calculations within the framework of the one-dimensional vortex-like electron fluid model in applied-B ion diodes, taking account the electron inertia effects, are presented. The existence of the additional relation between the magnetic field and the electric potential offers an opportunity to reduce the ion diode problem to the system of the algebraic equations for the constants introduced. The ion current density in an ion diode is determined only by the magnetic flux cut out by the virtual cathode. As an illustration, the ion diode impedance for the KALIF device was calculated. (author). 2 figs., 6 refs.

Instrumentation amplifier implements second-order active low-pass filter with high gain factor

International Nuclear Information System (INIS)

Blomqvist, Kim H; Eskelinen, Pekka; Sepponen, Raimo E

2011-01-01

A single-ended second-order active low-pass filter can simultaneously provide high gain factor and dc voltage subtraction. This makes it possible to reduce the number of components and signal processing stages needed in an application where small voltage changes are measured on the top of large dc voltage masked by a large amplitude oscillating carrier. The filter described in this paper is constructed from a conventional 3-op-amp instrumentation amplifier and five passive circuit elements. (technical design note)

New equivalent-electrical circuit model and a practical measurement method for human body impedance.

Science.gov (United States)

Chinen, Koyu; Kinjo, Ichiko; Zamami, Aki; Irei, Kotoyo; Nagayama, Kanako

2015-01-01

Human body impedance analysis is an effective tool to extract electrical information from tissues in the human body. This paper presents a new measurement method of impedance using armpit electrode and a new equivalent circuit model for the human body. The lowest impedance was measured by using an LCR meter and six electrodes including armpit electrodes. The electrical equivalent circuit model for the cell consists of resistance R and capacitance C. The R represents electrical resistance of the liquid of the inside and outside of the cell, and the C represents high frequency conductance of the cell membrane. We propose an equivalent circuit model which consists of five parallel high frequency-passing CR circuits. The proposed equivalent circuit represents alpha distribution in the impedance measured at a lower frequency range due to ion current of the outside of the cell, and beta distribution at a high frequency range due to the cell membrane and the liquid inside cell. The calculated values by using the proposed equivalent circuit model were consistent with the measured values for the human body impedance.

Pulsed corona generation using a diode-based pulsed power generator

Science.gov (United States)

Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

2003-10-01

Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

Energy Technology Data Exchange (ETDEWEB)

Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

2013-12-21

Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ∼1.5 V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6 V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V{sub S} ≲ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0 V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295 K for a diode with 12 nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25 nm of Al{sub 2}O{sub 3} is ∼140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ∼3 and ∼35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O

Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

Science.gov (United States)

Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

1999-01-01

The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

International Nuclear Information System (INIS)

Mosher, D.; Cooperstein, G.; Rose, D.V.; Swanekamp, S.B.

1996-01-01

In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs

Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

Energy Technology Data Exchange (ETDEWEB)

Mosher, D; Cooperstein, G [Naval Research Laboratory, Washington, DC (United States); Rose, D V; Swanekamp, S B [JAYCOR, Vienna, VA (United States)

1997-12-31

In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.

Circuit bridging of components by smoke

International Nuclear Information System (INIS)

Tanaka, T.J.; Nowlen, S.P.; Anderson, D.J.

1996-10-01

Smoke can adversely affect digital electronics; in the short term, it can lead to circuit bridging and in the long term to corrosion of metal parts. This report is a summary of the work to date and component-level tests by Sandia National Laboratories for the Nuclear Regulatory Commission to determine the impact of smoke on digital instrumentation and control equipment. The component tests focused on short-term effects such as circuit bridging in typical components and the factors that can influence how much the smoke will affect them. These factors include the component technology and packaging, physical board protection, and environmental conditions such as the amount of smoke, temperature of burn, and humidity level. The likelihood of circuit bridging was tested by measuring leakage currents and converting those currents to resistance in ohms. Hermetically sealed ceramic packages were more resistant to smoke than plastic packages. Coating the boards with an acrylic spray provided some protection against circuit bridging. The smoke generation factors that affect the resistance the most are humidity, fuel level, and burn temperature. The use of CO 2 as a fire suppressant, the presence of galvanic metal, and the presence of PVC did not significantly affect the outcome of these results

SU-F-T-301: Planar Dose Pass Rate Inflation Due to the MapCHECK Measurement Uncertainty Function

International Nuclear Information System (INIS)

Bailey, D; Spaans, J; Kumaraswamy, L; Podgorsak, M

2016-01-01

Purpose: To quantify the effect of the Measurement Uncertainty function on planar dosimetry pass rates, as analyzed with Sun Nuclear Corporation analytic software (“MapCHECK” or “SNC Patient”). This optional function is toggled on by default upon software installation, and automatically increases the user-defined dose percent difference (%Diff) tolerance for each planar dose comparison. Methods: Dose planes from 109 IMRT fields and 40 VMAT arcs were measured with the MapCHECK 2 diode array, and compared to calculated planes from a commercial treatment planning system. Pass rates were calculated within the SNC analytic software using varying calculation parameters, including Measurement Uncertainty on and off. By varying the %Diff criterion for each dose comparison performed with Measurement Uncertainty turned off, an effective %Diff criterion was defined for each field/arc corresponding to the pass rate achieved with MapCHECK Uncertainty turned on. Results: For 3%/3mm analysis, the Measurement Uncertainty function increases the user-defined %Diff by 0.8–1.1% average, depending on plan type and calculation technique, for an average pass rate increase of 1.0–3.5% (maximum +8.7%). For 2%, 2 mm analysis, the Measurement Uncertainty function increases the user-defined %Diff by 0.7–1.2% average, for an average pass rate increase of 3.5–8.1% (maximum +14.2%). The largest increases in pass rate are generally seen with poorly-matched planar dose comparisons; the MapCHECK Uncertainty effect is markedly smaller as pass rates approach 100%. Conclusion: The Measurement Uncertainty function may substantially inflate planar dose comparison pass rates for typical IMRT and VMAT planes. The types of uncertainties incorporated into the function (and their associated quantitative estimates) as described in the software user’s manual may not accurately estimate realistic measurement uncertainty for the user’s measurement conditions. Pass rates listed in published

SU-F-T-301: Planar Dose Pass Rate Inflation Due to the MapCHECK Measurement Uncertainty Function

Energy Technology Data Exchange (ETDEWEB)

Bailey, D [Northside Hospital Cancer Institute, Atlanta, GA (United States); Spaans, J; Kumaraswamy, L; Podgorsak, M [Roswell Park Cancer Institute, Buffalo, NY (United States)

2016-06-15

Purpose: To quantify the effect of the Measurement Uncertainty function on planar dosimetry pass rates, as analyzed with Sun Nuclear Corporation analytic software (“MapCHECK” or “SNC Patient”). This optional function is toggled on by default upon software installation, and automatically increases the user-defined dose percent difference (%Diff) tolerance for each planar dose comparison. Methods: Dose planes from 109 IMRT fields and 40 VMAT arcs were measured with the MapCHECK 2 diode array, and compared to calculated planes from a commercial treatment planning system. Pass rates were calculated within the SNC analytic software using varying calculation parameters, including Measurement Uncertainty on and off. By varying the %Diff criterion for each dose comparison performed with Measurement Uncertainty turned off, an effective %Diff criterion was defined for each field/arc corresponding to the pass rate achieved with MapCHECK Uncertainty turned on. Results: For 3%/3mm analysis, the Measurement Uncertainty function increases the user-defined %Diff by 0.8–1.1% average, depending on plan type and calculation technique, for an average pass rate increase of 1.0–3.5% (maximum +8.7%). For 2%, 2 mm analysis, the Measurement Uncertainty function increases the user-defined %Diff by 0.7–1.2% average, for an average pass rate increase of 3.5–8.1% (maximum +14.2%). The largest increases in pass rate are generally seen with poorly-matched planar dose comparisons; the MapCHECK Uncertainty effect is markedly smaller as pass rates approach 100%. Conclusion: The Measurement Uncertainty function may substantially inflate planar dose comparison pass rates for typical IMRT and VMAT planes. The types of uncertainties incorporated into the function (and their associated quantitative estimates) as described in the software user’s manual may not accurately estimate realistic measurement uncertainty for the user’s measurement conditions. Pass rates listed in published

Performance of the Superconducting Corrector Magnet Circuits during the Commissioning of the LHC

International Nuclear Information System (INIS)

Venturini Delsolaro, W.; Baggiolini, V.; Ballarino, A.; Bellesia, B.; Bordry, F.; Cantone, A.; Casas Lino, M.P.; CastilloTrello, C.; Catalan-Lasheras, N.; Charifoulline, Zinour; Charrondiere, C.; CERN; Madrid, CIEMAT; Fermilab

2008-01-01

The LHC is a complex machine requiring more than 7400 superconducting corrector magnets distributed along a circumference of 26.7 km. These magnets are powered in 1446 different electrical circuits at currents ranging from 60 A up to 600 A. Among the corrector circuits the 600 A corrector magnets form the most diverse and differentiated group. All together, about 60000 high current connections had to be made. A fault in a circuit or one of the superconducting connections would have severe consequences for the accelerator operation. All magnets are wound from various types of Nb-Ti superconducting strands, and many contain parallel protection resistors to by-pass the current still flowing in the other magnets of the same circuit when they quench. In this paper the performance of these magnet circuits is presented, focusing on the quench behavior of the magnets. Quench detection and the performance of the electrical interconnects will be dealt with. The results as measured on the entire circuits are compared to the test results obtained at the reception of the individual magnets

Semiconductor device models for circuit simulation power electronics; Modeles de composants semiconducteurs pour la simulation des circuits en electronique de puissance

Energy Technology Data Exchange (ETDEWEB)

Berraies, M.O.

1998-09-10

In this thesis, an alternative strategy based on a regional approach to modeling and a new partition of the model library in the simulation is proposed. The main objective is to substitute for the usual concept of `one device, on model` that of an adaptable assembly of a limited number of submodels associated with well-identified regions of semiconductor structures. In other words, the library will only contain the primitive building-blocks of the power device models. This strategy guarantees the compatibility of the various semiconductor models in terms of physical concepts, validity domain, accuracy, homogeneity of parameter identification procedures, similarly of implementation in the simulator. This approach has been applied to PIN diodes and IGBTs for experimental validation. The next step consisted on the simulation of circuit involving several interacting devices. A simple IGBT/PIN diode chopper cell has been chosen. The results obtained compare well with experiment. This demonstrates the consistency of the proposed approach. (author) 43 refs.

Fabrication and electrical characteristics for MIS diode by utilizing TiO2 ceramics

International Nuclear Information System (INIS)

Bae, S.H.

1981-01-01

Metal insulator semiconductor diodes were made by utilizing TiO 2 ceramics. Tunnel field emission is here proposed as a model for rectification in TiO 2 diode. Measurements of junction depth show very satisfactory agreement with value obtained from the Richardson plot, thus serving as additional supporting evidence of field emission in TiO 2 ceramic. The measured junction area exceeds by a factor of 10 6 the value expected by assuming field emission. The Richardson plot shows a deviation from the emission theory at low voltage, which is probably due to leakage currents which are present in MIS rutile diode. (author)

Wavenumber-domain separation of rail contribution to pass-by noise

Science.gov (United States)

Zea, Elias; Manzari, Luca; Squicciarini, Giacomo; Feng, Leping; Thompson, David; Arteaga, Ines Lopez

2017-11-01

In order to counteract the problem of railway noise and its environmental impact, passing trains in Europe must be tested in accordance to a noise legislation that demands the quantification of the noise generated by the vehicle alone. However, for frequencies between about 500 Hz and 1600 Hz, it has been found that a significant part of the measured noise is generated by the rail, which behaves like a distributed source and radiates plane waves as a result of the contact with the train's wheels. Thus the need arises for separating the rail contribution to the pass-by noise in that particular frequency range. To this end, the present paper introduces a wavenumber-domain filtering technique, referred to as wave signature extraction, which requires a line microphone array parallel to the rail, and two accelerometers on the rail in the vertical and lateral direction. The novel contributions of this research are: (i) the introduction and application of wavenumber (or plane-wave) filters to pass-by data measured with a microphone array located in the near-field of the rail, and (ii) the design of such filters without prior information of the structural properties of the rail. The latter is achieved by recording the array pressure, as well as the rail vibrations with the accelerometers, before and after the train pass-by. The performance of the proposed method is investigated with a set of pass-by measurements performed in Germany. The results seem to be promising when compared to reference data from TWINS, and the largest discrepancies occur above 1600 Hz and are attributed to plane waves radiated by the rail that so far have not been accounted for in the design of the filters.

A novel readout integrated circuit for ferroelectric FPA detector

Science.gov (United States)

Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

2017-11-01

Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

Determination of reference data of REB diodes by using a numerical method for different applications

International Nuclear Information System (INIS)

Sinman, S.; Sinman, A.

1982-01-01

In this study, some reference data of a REB diode are presented functionally. These given characteristics are consisted of the computational results. Generally the numerical scheme depends upon the essential parameters of the charged transmission line and Child-Langmuir's diode model. By this system, further the correlation functions, some other definite functions such as the voltage of transmission line Vsub(L)(t), the diode voltage Vsub(d)(t), the diode current Isub(d)(t), the diode impedance Rsub(d)(t), the diode input power Wsub(d)(t), the dissipated energy Usub(d)(t), the efficiency phi, the beam density nsub(b)(t), the relativistic beam energy Usub(b)(t), and the intrinsic impedance Zsub(int)(t) have also been investigated. (author)

Passing particle toroidal precession induced by electric field in a tokamak

International Nuclear Information System (INIS)

Andreev, V. V.; Ilgisonis, V. I.; Sorokina, E. A.

2013-01-01

Characteristics of a rotation of passing particles in a tokamak with radial electric field are calculated. The expression for time-averaged toroidal velocity of the passing particle induced by the electric field is derived. The electric-field-induced additive to the toroidal velocity of the passing particle appears to be much smaller than the velocity of the electric drift calculated for the poloidal magnetic field typical for the trapped particle. This quantity can even have the different sign depending on the azimuthal position of the particle starting point. The unified approach for the calculation of the bounce period and of the time-averaged toroidal velocity of both trapped and passing particles in the whole volume of plasma column is presented. The results are obtained analytically and are confirmed by 3D numerical calculations of the trajectories of charged particles

Passing particle toroidal precession induced by electric field in a tokamak

Energy Technology Data Exchange (ETDEWEB)

Andreev, V. V. [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation); Ilgisonis, V. I.; Sorokina, E. A. [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation); NRC “Kurchatov Institute”, Kurchatov Sq. 1, Moscow 123182 (Russian Federation)

2013-12-15

Characteristics of a rotation of passing particles in a tokamak with radial electric field are calculated. The expression for time-averaged toroidal velocity of the passing particle induced by the electric field is derived. The electric-field-induced additive to the toroidal velocity of the passing particle appears to be much smaller than the velocity of the electric drift calculated for the poloidal magnetic field typical for the trapped particle. This quantity can even have the different sign depending on the azimuthal position of the particle starting point. The unified approach for the calculation of the bounce period and of the time-averaged toroidal velocity of both trapped and passing particles in the whole volume of plasma column is presented. The results are obtained analytically and are confirmed by 3D numerical calculations of the trajectories of charged particles.

Asymmetric contacts on a single SnO₂ nanowire device: an investigation using an equivalent circuit model.

Science.gov (United States)

Huh, Junghwan; Na, Junhong; Ha, Jeong Sook; Kim, Sangtae; Kim, Gyu Tae

2011-08-01

Electrical contacts between the nanomaterial and metal electrodes are of crucial importance both from fundamental and practical points of view. We have systematically compared the influence of contact properties by dc and EIS (Electrochemical impedance spectroscopy) techniques at various temperatures and environmental atmospheres (N(2) and 1% O(2)). Electrical behaviors are sensitive to the variation of Schottky barriers, while the activation energy (E(a)) depends on the donor states in the nanowire rather than on the Schottky contact. Equivalent circuits in terms of dc and EIS analyses could be modeled by Schottky diodes connected with a series resistance and parallel RC circuits, respectively. These results can facilitate the electrical analysis for evaluating the nanowire electronic devices with Schottky contacts.

Sensitivity analysis of an LCL-filter-based three-phase active rectifier via a virtual circuit approach

DEFF Research Database (Denmark)

Blaabjerg, Frede; Chiarantoni, Ernesto; Aquila, Antonio Dell’

2004-01-01

Three-phase active rectifiers based on the voltage source converter topology can successfully replace traditional thyristor based rectifiers or diode bridge plus chopper in interfacing dc-systems to the grid. However, if the application in which they are employed has a high safety issue......, to the grid side stiffness and to the parameters of the controller has never been detailed considered. In this paper the experimental results of an LCL-filter-based three-phase active rectifier are analysed with the circuit theory approach. A ?virtual circuit? is synthesized in role of the digital controller...

Surge protective device response to steep front transient in low voltage circuit

Energy Technology Data Exchange (ETDEWEB)

Marcuz, J.; Binczak, S.; Bilbault, J.M. [Universite de Bourgogne, Dijon (France)], Emails: jerome.marcuz@ laposte.net, stbinc@u-bourgogne.fr, bilbault@u-bourgogne.fr; Girard, F. [ADEE Electronic, Pont de Pany (France)

2007-07-01

Surge propagation on cables of electrical or data lines leads to a major protection problem as the number of equipment based on solid-state circuits or microprocessors increases. Sub-microsecond components of real surge waveform has to be taken into account for a proper protection even in the case of surges caused by indirect lightning effects. The response of a model of transient voltage suppressor diode based surge protection device (SPD) to fast front transient is analytically studied, then compared to simulations, including the lines connected to the SPD and to the protected equipment. (author)

Noise distribution of a peak track and hold circuit

International Nuclear Information System (INIS)

Seller, Paul; Hardie, Alec L.; Morrissey, Quentin

2012-01-01

Noise in linear electronic circuits is well characterised in terms of power spectral density in the frequency domain and the Normal probability density function in the time domain. For instance a charge preamplifier followed by a simple time independent pulse shaping circuit produces an output with a predictable, easily calculated Normal density function. By the Ergodic Principle this is true if the signal is sampled randomly in time or the experiment is run many times and measured at a fixed time after the circuit is released from reset. Apart from well defined cases, the time of the sample after release of reset does not affect the density function. If this signal is then passed through a peak track-and-hold circuit the situation is very different. The probability density function of the sampled signal is no longer Normal and the function changes with the time of the sample after release of reset. This density function can be classified by the Gumbel probability density function which characterises the Extreme Value Distribution of a defined number of Normally distributed values. The number of peaks in the signal is an important factor in the analysis. This issue is analysed theoretically and compared with a time domain noise simulation programme. This is then related to a real electronic circuit used for low-noise X-ray measurements and shows how the low-energy resolution of this system is significantly degraded when using a peak track-and-hold.

Performance enhancement of polymer Schottky diode by doping pentacene

International Nuclear Information System (INIS)

Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

2009-01-01

Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Velocity spread of REB generated by high current diode

International Nuclear Information System (INIS)

Vrba, P.

1994-05-01

A theoretical analysis and numerical simulations of the Relativistic Electron Beam (REB) generation in a high current diode immersed in an external magnetic field were performed. The calculations confirmed the generated beam to be homogeneous and monoenergetic in a broad central region. In the case of a cylindrical diode the mixing of electron trajectories was only observed in a narrow peripheral beam region. The angle between particle trajectories and the external longitudinal magnetic field varies chaotically form 0 to -25 deg. This phenomenon suppresses the excitation of the two-stream instability excited by REB in a plasma column. (author) 2 tabs., 12 figs., 7 refs

Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

Science.gov (United States)

Kiaee, Zohreh; Joo, Seung Ki

2018-03-01

The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

Statistical variability and confidence intervals for planar dose QA pass rates

Energy Technology Data Exchange (ETDEWEB)

Bailey, Daniel W.; Nelms, Benjamin E.; Attwood, Kristopher; Kumaraswamy, Lalith; Podgorsak, Matthew B. [Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260 (United States) and Department of Radiation Medicine, Roswell Park Cancer Institute, Buffalo, New York 14263 (United States); Canis Lupus LLC, Merrimac, Wisconsin 53561 (United States); Department of Biostatistics, Roswell Park Cancer Institute, Buffalo, New York 14263 (United States); Department of Radiation Medicine, Roswell Park Cancer Institute, Buffalo, New York 14263 (United States); Department of Radiation Medicine, Roswell Park Cancer Institute, Buffalo, New York 14263 (United States); Department of Molecular and Cellular Biophysics and Biochemistry, Roswell Park Cancer Institute, Buffalo, New York 14263 (United States) and Department of Physiology and Biophysics, State University of New York at Buffalo, Buffalo, New York 14214 (United States)

2011-11-15

Purpose: The most common metric for comparing measured to calculated dose, such as for pretreatment quality assurance of intensity-modulated photon fields, is a pass rate (%) generated using percent difference (%Diff), distance-to-agreement (DTA), or some combination of the two (e.g., gamma evaluation). For many dosimeters, the grid of analyzed points corresponds to an array with a low areal density of point detectors. In these cases, the pass rates for any given comparison criteria are not absolute but exhibit statistical variability that is a function, in part, on the detector sampling geometry. In this work, the authors analyze the statistics of various methods commonly used to calculate pass rates and propose methods for establishing confidence intervals for pass rates obtained with low-density arrays. Methods: Dose planes were acquired for 25 prostate and 79 head and neck intensity-modulated fields via diode array and electronic portal imaging device (EPID), and matching calculated dose planes were created via a commercial treatment planning system. Pass rates for each dose plane pair (both centered to the beam central axis) were calculated with several common comparison methods: %Diff/DTA composite analysis and gamma evaluation, using absolute dose comparison with both local and global normalization. Specialized software was designed to selectively sample the measured EPID response (very high data density) down to discrete points to simulate low-density measurements. The software was used to realign the simulated detector grid at many simulated positions with respect to the beam central axis, thereby altering the low-density sampled grid. Simulations were repeated with 100 positional iterations using a 1 detector/cm{sup 2} uniform grid, a 2 detector/cm{sup 2} uniform grid, and similar random detector grids. For each simulation, %/DTA composite pass rates were calculated with various %Diff/DTA criteria and for both local and global %Diff normalization

Research of time-domain equivalent circuit method in solving dispersion of coupled-cavity traveling-wave tube

International Nuclear Information System (INIS)

Li Wenjun; China Academy of Engineering Physics, Mianyang; Xu Zhou; Li Ming; Yang Xingfan; Chen Yanan; Liu Jie; Jin Xiao; Lin Yuzheng

2008-01-01

In this paper, a time-domain equivalent circuit method is applied to solve dispersion of coupled-cavity travelling-wave tube (CCTWT). First, the time-domain circuit equations of CCTWT coupled-cavity chain are deduced from the equivalent circuit model. Then, the equations are solved numerically by fourth-order Runge-Kutta method and a program CTTDCP is developed using MATLAB. Last, a L-band CCTWT is calculated using CTTDCP and the cavity pass-band of this tube is computed to be 1.08-1.48 GHz, which is consistent with the experimental results and the simulation results of electromagnetic code and demonstrates the validity of the time-domain equivalent circuit method. In addition, a new design method which uses the equivalent circuit method and electromagnetic simulation together to optimize the cold cavity characteristics of CCTWT is proposed. (authors)

A Voltage Gain-Controlled Modified CFOA And Its Application in Electronically Tunable Four-Mode All-Pass Filter Design

Directory of Open Access Journals (Sweden)

Norbert Herencsar

2012-07-01

Full Text Available This paper presents a new active building block (ABB called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA based on bipolar junction transistor technology. The versatility of the new ABB is demonstrated in new first-order all-pass filter structure design employing single VGC-MCFOA, single grounded capacitor, and three resistors. Introduced circuit provides all four possible transfer functions at the same configuration, namely current-mode, transimpedance-mode, transadmittance-mode, and voltage-mode. The pole frequency of the circuit can be easily tuned by means of DC bias currents. The theoretical results are verified by SPICE simulations based on bipolar transistor arrays AT&T ALA400-CBIC-R process parameters.

Simulation of the High-Pass Filter for 56MHz Cavity for RHIC

International Nuclear Information System (INIS)

Wu, Q.; Ben-Zvi, I.

2010-01-01

The 56MHz Superconducting RF (SRF) cavity for RHIC places high demands High Order Mode (HOM) damping, as well as requiring a high field at gap with fundamental mode frequency. The damper of 56MHz cavity is designed to extract all modes to the resistance load outside, including the fundamental mode. Therefore, the circuit must incorporate a high-pass filter to reflect back the fundamental mode into the cavity. In this paper, we show the good frequency response map obtained from our filter's design. We extract a circuit diagram from the microwave elements that simulate well the frequency spectrum of the finalized filter. We also demonstrate that the power dissipation on the filter over its frequency range is small enough for cryogenic cooling.

PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

Directory of Open Access Journals (Sweden)

D. A. Arkhipov

2015-11-01

Full Text Available Subject of Research. Thermophysical and optical techniques of parameter regulation for diode pumped solid-state laser are studied as applied to space laser communication and laser ranging lines. Methods. The investigations are carried out on the base of the original design of diode pumped solid-state laser module that includes the following: Nd:YAG slab element, diode pumped by 400W QCW produced by NORTHROP GRUMMAN; two-pass unstable resonator with rotation of the laser beam aperture about its axis through 1800; the output mirror of the resonator with a variable reflection coefficient; hyperthermal conductive plates for thermal stabilization of the laser diode generation modes. The presence of thermal conductive plates excludes conventional running water systems applied as cooling systems for solid-state laser components. The diodes temperature stabilization is achieved by applying the algorithm of pulse-width modulation of power of auxiliary electric heaters. To compensate for non-stationary thermal distortions of the slab refractive index, the laser resonator scheme comprises a prism reflector with an apex angle of 1200. Narrow sides of the prism are covered with reflective coating, and its wide side is sprayed with antireflection coating. The beam aperture is turned around its axis through 1800 because of triple reflection of the beam inside the prism. The turning procedure leads to compensating for the output beam phase distortions in view of symmetric character of the aberrations of slab refractive index. To suppress parasitic oscillations inside the slab, dielectric coatings of wide sides of the slab are used. Main Results. We have demonstrated theoretically and experimentally that the usage of hyperthermal conductive plates together with the algorithm of pulse-width modulation provides stabilizing of the diode substrate temperature accurate within ± 0.1 °С and smoothing the temperature distribution along the plate surface accurate

Installations having pressurised fluid circuits

International Nuclear Information System (INIS)

Rigg, S.; Grant, J.

1977-01-01

Reference is made to nuclear installations having pressurised coolant flow circuits. Breaches in such circuits may quickly result in much damage to the plant. Devices such as non-return valves, orifice plates, and automatically operated shut-off valves have been provided to prevent or reduce fluid flow through a breached pipe line, but such devices have several disadvantages; they may present large restrictions to normal flow of coolant, and may depend on the operation of ancillary equipment, with consequent delay in bringing them into operation in an emergency. Other expedients that have been adopted to prevent or reduce reverse flow through an upstream breach comprise various forms of hydraulic counter flow brakes. The arrangement described has at least one variable fluid brake comprising a fluidic device connected into a duct in the pressurised circuit, the device having an inlet, an outlet, a vortex chamber between the inlet and outlet, a control jet for introducing fluid into the vortex chamber, connections communicating the inlet and the outlet into one part of the circuit and the control jet into another region at a complementary pressure so that, in the event of a breach in the circuit in one region, fluid passes from the other region to enter the vortex chamber to stimulate pressure to create a flow restricting vortex in the chamber that reduces flow through the breach. The system finds particular application to stream generating pressure tube reactors, such as the steam generating heavy water reactor at UKAEA, Winfrith. (U.K.)

Comparison of SHG Power Modulation by Wavelength Detuning of DFB- and DBR-Tapered Laser Diodes

DEFF Research Database (Denmark)

Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

2016-01-01

of the response of the second harmonic light to perturbations of the infrared laser diode and compare how the response differs for DFB- and DBR-Tapered laser diodes. We show that the visible light can be modulated from CW to kHz with modulation depths above 90% by wavelength detuning the laser diode.......Pulsed visible lasers are used for a number of applications such as laser displays and medical treatments. Generating this visible light by direct frequency doubling of high power diode lasers opens new possibilities on how the power modulation can be performed. We present an investigation...

Experimental studies for improvement of thermal effects in a high-power fiber-coupled diode laser module operating at 808 nm

Science.gov (United States)

El-Sherif, Ashraf F.; Hussein, Khalid; Hassan, Mahmoud F.; Talat, Mahmoud M.

2012-03-01

High power diode laser module operating at 808 nm is required for different applications, such as developing an efficient high power Nd3+-doped solid state laser and Tm3+ -doped silica fiber laser, industrial, medical and military applications. Optical and thermal images characterization for a fiber-coupled high power diode laser module is presented experimentally for 6.6 Watt output optical power .An external temperature controller system was designed, which stabilizes the central wavelength at 808 nm at 25°C over a wide range of diode laser driving current from 1A to 6 A. without this cooling system, the wavelength changes by 0.35nm/°C for temperature changes from 20°C to 40°C at the same range of the driving current. In this paper we have present a methodology for temperature reduction of a 808 nm high power diode laser module, based on dynamically thermal control, which is known as dynamic thermal management. Stabilization of the output wavelength has been done by using proportional speed control (PSC) of a CPU cooling fan with certain scheme of straight fins heat sink. Two electronic circuits based on pulse width modulation (PWM) in microcontroller and comparators IC have been used. This technique can be considered as an effective mechanism for reducing temperature and power dissipation to make stabilization of the diode laser output wavelength by preventing heat accumulation from the thermo electric cooling (TEC) inside the diode laser module confirmed by thermal images.

Circuit courts clash over HIV in the workplace.

Science.gov (United States)

1997-09-19

Some of the major differences of opinions between the circuit courts on issues affecting HIV and employment are examined. In the seven years since the passing of the Americans with Disabilities Act (ADA), there has been disagreement among the circuits relative to the interpretation of the law. At the heart of the debate is whether or not HIV infection, without symptoms of AIDS, actually qualifies for a disability under the meaning and intent of the ADA. Another fundamental issue is whether or not reproduction is considered a major life activity under the ADA. Federal circuit courts have also considered what happens to patients in the latter stages of HIV diseases, when symptoms are so pronounced that he or she qualifies for disability benefits including Social Security or private disability plans. There is disagreement among the circuits as to whether insurance products, including those provided through an employee benefit program, are covered under the ADA. As of this date, the U.S. Supreme Court has not intervened on any of the HIV/ADA-related cases.

Planar InP-based Schottky barrier diodes for terahertz applications

International Nuclear Information System (INIS)

Zhou Jingtao; Yang Chengyue; Ge Ji; Jin Zhi

2013-01-01

Based on characteristics such as low barrier and high electron mobility of lattice matched In 0.53 Ga 0.47 As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω; and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits. (semiconductor devices)

SU-F-T-273: Using a Diode Array to Explore the Weakness of TPS DoseCalculation Algorithm for VMAT and Sliding Window Techniques

Energy Technology Data Exchange (ETDEWEB)

Park, J; Lu, B; Yan, G; Park, J; Li, F; Li, J; Liu, C [University of Florida, Gainesville, FL (United States)

2016-06-15

Purpose: To identify the weakness of dose calculation algorithm in a treatment planning system for volumetric modulated arc therapy (VMAT) and sliding window (SW) techniques using a two-dimensional diode array. Methods: The VMAT quality assurance(QA) was implemented with a diode array using multiple partial arcs that divided from a VMAT plan; each partial arc has the same segments and the original monitor units. Arc angles were less than ± 30°. Multiple arcs delivered through consecutive and repetitive gantry operating clockwise and counterclockwise. The source-toaxis distance setup with the effective depths of 10 and 20 cm were used for a diode array. To figure out dose errors caused in delivery of VMAT fields, the numerous fields having the same segments with the VMAT field irradiated using different delivery techniques of static and step-and-shoot. The dose distributions of the SW technique were evaluated by creating split fields having fine moving steps of multi-leaf collimator leaves. Calculated doses using the adaptive convolution algorithm were analyzed with measured ones with distance-to-agreement and dose difference of 3 mm and 3%.. Results: While the beam delivery through static and step-and-shoot techniques showed the passing rate of 97 ± 2%, partial arc delivery of the VMAT fields brought out passing rate of 85%. However, when leaf motion was restricted less than 4.6 mm/°, passing rate was improved up to 95 ± 2%. Similar passing rate were obtained for both 10 and 20 cm effective depth setup. The calculated doses using the SW technique showed the dose difference over 7% at the final arrival point of moving leaves. Conclusion: Error components in dynamic delivery of modulated beams were distinguished by using the suggested QA method. This partial arc method can be used for routine VMAT QA. Improved SW calculation algorithm is required to provide accurate estimated doses.

Adiabatic interpretation of a two-level atom diode, a laser device for unidirectional transmission of ground-state atoms

International Nuclear Information System (INIS)

Ruschhaupt, A.; Muga, J. G.

2006-01-01

We present a generalized two-level scheme for an 'atom diode', namely, a laser device that lets a two-level ground-state atom pass in one direction, say from left to right, but not in the opposite direction. The laser field is composed of two lateral state-selective mirror regions and a central pumping region. We demonstrate the robustness of the scheme and propose a physical realization. It is shown that the inclusion of a counterintuitive laser field blocking the excited atoms on the left side of the device is essential for a perfect diode effect. The reason for this, the diodic behavior, and the robustness may be understood with an adiabatic approximation. The conditions to break down the approximation, which imply also the diode failure, are analyzed

Commutation circuit for an HVDC circuit breaker

Science.gov (United States)

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Proposal for the study of laminar relativistic electron beam generation by a foilless diode

International Nuclear Information System (INIS)

Jones, M.E.; Thode, L.E.

1979-02-01

The continuation of an analytical and numerical study of intense relativistic electron beam generation by foilless diodes is proposed. The investigation is aimed at optimizing the diode design to produce a laminar flow

A Robot Supported By C

International Nuclear Information System (INIS)

Shin, Junghwan

1994-11-01

This book introduces analog with register, diode and light emitting diode, condenser, capacitor and transistor, operational amplifier tester, oscilloscope and lapping, digital circuit such as sorts of digital lc, gate circuit flip-flop, shift register and latch, and counter, C-language including entering C-language, editor using, debugging, basic data type of C-language, operator and control structure, array and pointer, storage class, structure and union, expansion SLOT of PC, interface card and C-language such as graphic function, keyboard control, and mouse control.

In-service inspection of electronics components, circuits and nuclear radiation detectors

International Nuclear Information System (INIS)

Darbhe, M.D.

2002-01-01

A nuclear reactor is a complex process plant. Like a nuclear power plant, the research reactors also employ various nuclear and process systems, the scope and number of such systems being plant-specific. In-service inspection of these systems is an important requirement and is applied at various levels of their constituent units such as detectors, electronics components, circuits and integrated systems. The sensors used cover a wide range such as neutronic, radiation, process (pressure, temperature, flow, level) and many others. The present discussion is limited to neutronic and radiation detectors. The electronic components used normally consist of passive components like resistors, capacitors, semiconductor components like diodes, transistors, analog integrated circuits and digital integrated circuits and electromagnetic relays, to name a few. In order to have a comprehensive surveillance and ISI plan, over the entire plant life, it is necessary to understand various mechanisms, which degrade the performance of these systems. These are discussed initially and later various ISI methods that are used on component-circuit or system level, to ensure optimum system performance, are discussed. The computerised systems, because of hardware and software considerations, have to be given special attention, and the same are discussed briefly

A Compact UWB Band-Pass Filter Using Embedded Circular Slot Structures for Improved Upper Stop-band Performance

DEFF Research Database (Denmark)

Shen, Ming; Ren, Jian; Mikkelsen, Jan Hvolgaard

2016-01-01

structures into the ring resonator. This is different from conventional designs using cascaded bandstop/low-pass filters for stop-band response suppression, which usually leads to big circuit sizes. And hence the proposed approach can reduce the circuit size significantly. A prototype filter with a compact...... size (13.6 mm×6.75 mm) has been implemented for experimental validation. The measured results show a −3 dB frequency band from 3.4 GHz to 11.7 GHz and > 20 dB upper stop-band suppression from 12.5 GHz to 20GHz....

Oscillator circuits

CERN Document Server

Graf, Rudolf F

1996-01-01

This series of circuits provides designers with a quick source for oscillator circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listing

Measuring circuits

CERN Document Server

Graf, Rudolf F

1996-01-01

This series of circuits provides designers with a quick source for measuring circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listings

Long-term Comparison of a Large Spot Vacuum Assisted Handpiece vs the Small Spot Size Traditional Handpiece of the 800 nm Diode Laser.

Science.gov (United States)

Youssef, Nour J; Rizk, Alain G; Ibrahimi, Omar A; Tannous, Zeina S

2017-09-01

BACKGROUND The 800 nm long-pulsed diode laser machine is safe and effective for permanent hair reduction. Traditionally, most long-pulsed diode lasers used for hair removal had a relatively small spot size. Recently, a long-pulsed diode laser with a large spot size and vacuum assisted suction handpiece was introduced. The treatment parameters of each type of handpiece differ. Short and long-term clinical efficacy, treatment associated pain, and patient satisfaction are important factors to be considered. This study aims to conduct a direct head to head comparison of both handpieces of the 800nm long-pulsed diode laser by evaluating long term hair reduction, treatment associated pain and patient satisfaction. Thirteen subjects were enrolled in this prospective, self-controlled, single-center study of axillary laser hair removal. The study involved 4 treatments using a long pulsed diode laser with a large spot size HS handpiece (single pass), HS handpiece (double pass), and a small spot size ET handpiece according to a randomized choice. The treatment sessions were done at 4-8 week intervals with follow up visits taken at 6 and 12 months after the last treatment session. Hair clearance and thickness analysis were assessed using macro hair count photographs taken at baseline visit, at each treatment session visit and at follow up visits. Other factors including pain, treatment duration, and patients' preference were secondary study endpoints. At 6 months follow up visits after receiving four laser treatments, there was statistically significant hair clearance in the three treatment arms with 66.1 % mean percentage hair reduction with the ET handpiece, 43.6% with the HSS (single pass) and 64.1 % with the HSD (double). However, at one year follow up, the results significantly varied from the 6 months follow up. The mean percentage hair reduction was 57.8% with the ET handpiece treated axillas (n=9), 16.5% with the HSS (single pass) handpiece treated axillas (n=7), and

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H2O mole fraction

International Nuclear Information System (INIS)

Xu, Lijun; Liu, Chang; Jing, Wenyang; Cao, Zhang; Xue, Xin; Lin, Yuzhen

2016-01-01

To monitor two-dimensional (2D) distributions of temperature and H 2 O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors’ knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H 2 O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm −1 (1343.3 nm) and 7185.6 cm −1 (1391.67 nm), respectively. The tomographic sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H 2 O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H 2 O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis

Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

Science.gov (United States)

Radevici, Ivan; Tiira, Jonna; Sadi, Toufik; Oksanen, Jani

2018-05-01

Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

The Pierce-diode approximation to the single-emitter plasma diode

International Nuclear Information System (INIS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-01-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

Magnetomicrofluidics Circuits for Organizing Bioparticle Arrays

Science.gov (United States)

Abedini-Nassab, Roozbeh

Single-cell analysis (SCA) tools have important applications in the analysis of phenotypic heterogeneity, which is difficult or impossible to analyze in bulk cell culture or patient samples. SCA tools thus have a myriad of applications ranging from better credentialing of drug therapies to the analysis of rare latent cells harboring HIV infection or in Cancer. However, existing SCA systems usually lack the required combination of programmability, flexibility, and scalability necessary to enable the study of cell behaviors and cell-cell interactions at the scales sufficient to analyze extremely rare events. To advance the field, I have developed a novel, programmable, and massively-parallel SCA tool which is based on the principles of computer circuits. By integrating these magnetic circuits with microfluidics channels, I developed a platform that can organize a large number of single particles into an array in a controlled manner. My magnetophoretic circuits use passive elements constructed in patterned magnetic thin films to move cells along programmed tracks with an external rotating magnetic field. Cell motion along these tracks is analogous to the motion of charges in an electrical conductor, following a rule similar to Ohm's law. I have also developed asymmetric conductors, similar to electrical diodes, and storage sites for cells that behave similarly to electrical capacitors. I have also developed magnetophoretic circuits which use an overlaid pattern of microwires to switch single cells between different tracks. This switching mechanism, analogous to the operation of electronic transistors, is achieved by establishing a semiconducting gap in the magnetic pattern which can be changed from an insulating state to a conducting state by application of electrical current to an overlaid electrode. I performed an extensive study on the operation of transistors to optimize their geometry and minimize the required gate currents. By combining these elements into

Diffraction-limited 577 nm true-yellow laser by frequency doubling of a tapered diode laser

Science.gov (United States)

Christensen, Mathias; Vilera, Mariafernanda; Noordegraaf, Danny; Hansen, Anders K.; Buß, Thomas; Jensen, Ole B.; Skovgaard, Peter M. W.

2018-02-01

A wide range of laser medical treatments are based on coagulation of blood by absorption of the laser radiation. It has, therefore, always been a goal of these treatments to maximize the ratio of absorption in the blood to that in the surrounding tissue. For this purpose lasers at 577 nm are ideal since this wavelength is at the peak of the absorption in oxygenated hemoglobin. Furthermore, 577 nm has a lower absorption in melanin when compared to green wavelengths (515 - 532 nm), giving it an advantage when treating at greater penetration depth. Here we present a laser system based on frequency doubling of an 1154 nm Distributed Bragg Reflector (DBR) tapered diode laser, emitting 1.1 W of single frequency and diffraction limited yellow light at 577 nm, corresponding to a conversion efficiency of 30.5%. The frequency doubling is performed in a single pass configuration using a cascade of two bulk non-linear crystals. The system is power stabilized over 10 hours with a standard deviation of 0.13% and the relative intensity noise is measured to be 0.064 % rms.

Energy Extraction Resistors for the Main Dipole and Quadrupole Circuits of the LHC

CERN Document Server

Dahlerup-Petersen, K; Popov, V; Sytchev, V V; Vasilev, L B; Zubko, V G

2000-01-01

When the LHC will be operating at its maximum beam energy, its superconducting dipole chains store a total magnetic energy of more than 11 GJ. At the same time, the QF and QD quadrupole circuits store a total energy of 400 MJ. Even with the sectorisation of each of the three principal power circuits into eight individually powered segments, the stored energy of a single circuit is considerable. During normal operation the energy in the dipole circuits is safely returned to the mains grid, using the thyristor-based, 'booster' unit of the power converters, operating in inversion. For the quadrupole chains, where the converter is of a mono-polar topology, the stored energy is dissipated into the resistive part of the warm d.c. power lines (busbars and cables) in a slow, controlled run-down. When a magnet quenches, however, such a slow energy transfer, taking 20 minutes from the rated LHC current, will not be possible. The 'cold' diode, taking over the magnet current in case of a quench, will not survive this slo...

Economic consequences of extra by-passes in district heating networks. Investment-, running- and maintenance costs

International Nuclear Information System (INIS)

Herbert, P.

1995-02-01

For various reasons, extra by-passes are installed in district heating networks to ensure a high flow temperature when the water circulation is insufficient. By 'extra by-pass' we here mean a connection between the distribution pipe and the return pipe. This study mainly deals with extra by-passes to prevent freezing. The estimation of the extra by-pass costs is based on the district heating rates. Our assumption is that an extra by-pass can be regarded as a substation in the district heating network, with regard to the demand for the water flow, heat and power. The reason is the difficulty to obtain available facts to estimate the real costs concerning extra by-passes. Therefore, the method can not claim that the information about the costs is exact but gives an indication of the size of them. The valves in an extra by-pass can be set more or less open. We assume that manual valves in extra by-passes are wide open. Thermostatic valves are, however, assumed to be adjusted in order to cause a very small water flow. 2 refs, 16 figs, 9 tabs, 6 appendices

Microwatt power consumption maximum power point tracking circuit using an analogue differentiator for piezoelectric energy harvesting

Science.gov (United States)

Chew, Z. J.; Zhu, M.

2015-12-01

A maximum power point tracking (MPPT) scheme by tracking the open-circuit voltage from a piezoelectric energy harvester using a differentiator is presented in this paper. The MPPT controller is implemented by using a low-power analogue differentiator and comparators without the need of a sensing circuitry and a power hungry controller. This proposed MPPT circuit is used to control a buck converter which serves as a power management module in conjunction with a full-wave bridge diode rectifier. Performance of this MPPT control scheme is verified by using the prototyped circuit to track the maximum power point of a macro-fiber composite (MFC) as the piezoelectric energy harvester. The MFC was bonded on a composite material and the whole specimen was subjected to various strain levels at frequency from 10 to 100 Hz. Experimental results showed that the implemented full analogue MPPT controller has a tracking efficiency between 81% and 98.66% independent of the load, and consumes an average power of 3.187 μW at 3 V during operation.

The design of infrared information collection circuit based on embedded technology

Science.gov (United States)

Liu, Haoting; Zhang, Yicong

2013-07-01

S3C2410 processor is a 16/32 bit RISC embedded processor which based on ARM920T core and AMNA bus, and mainly for handheld devices, and high cost, low-power applications. This design introduces a design plan of the PIR sensor system, circuit and its assembling, debugging. The Application Circuit of the passive PIR alarm uses the invisibility of the infrared radiation well into the alarm system, and in order to achieve the anti-theft alarm and security purposes. When the body goes into the range of PIR sensor detection, sensors will detect heat sources and then the sensor will output a weak signal. The Signal should be amplified, compared and delayed; finally light emitting diodes emit light, playing the role of a police alarm.

INVESTIGATION OF SINGLE-PASS/DOUBLE-PASS TECHNIQUES ON FRICTION STIR WELDING OF ALUMINIUM

Directory of Open Access Journals (Sweden)

N.A.A. Sathari

2014-12-01

Full Text Available The aim of this research is to study the effects of single-pass/ double-pass techniques on friction stir welding of aluminium. Two pieces of AA1100 with a thickness of 6.0 mm were friction stir welded using a CNC milling machine at rotational speeds of 1400 rpm, 1600 rpm and 1800 rpm respectively for single-pass and double-pass. Microstructure observations of the welded area were studied using an optical microscope. The specimens were tested by using a tensile test and Vickers hardness test to evaluate their mechanical properties. The results indicated that, at low rotational speed, defects such as ‘surface lack of fill’ and tunnels in the welded area contributed to a decrease in mechanical properties. Welded specimens using double-pass techniques show increasing values of tensile strength and hardness. From this investigation it is found that the best parameters of FSW welded aluminium AA1100 plate were those using double-pass techniques that produce mechanically sound joints with a hardness of 56.38 HV and 108 MPa strength at 1800 rpm compared to the single-pass technique. Friction stir welding, single-pass/ double-pass techniques, AA1100, microstructure, mechanical properties.

Hybrid silicon mode-locked laser with improved RF power by impedance matching

Science.gov (United States)

Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

2015-02-01

We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

International Nuclear Information System (INIS)

Dong Jun-Rong; Yang Hao; Tian Chao; Huang Jie; Zhang Hai-Ying

2012-01-01

The left-handed nonlinear transmission line (LH-NLTL) based on monolithic microwave integrated circuit (MMIC) technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode (PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Production of annular electron beams by foilless diodes

International Nuclear Information System (INIS)

Miller, R.B.; Prestwich, K.R.; Poukey, J.W.; Shope, S.L.

1980-01-01

A number of important aspects of the production of annular electron beams by foilless diodes are examined, both theoretically and experimentally. The theories of Ott, Antonsen, and Lovelace (OAL) and Chen and Lovelace (CL) are compared, and the CL theory is extended to include the effect of an axial gap in an approximate fashion. For the case of finite magnetic field strengths, Larmor orbits are examined and radial oscillations of the beam profile are predicted from a beam envelope analysis. Experimental results obtained with both low- and high-impedance sources have been compared with the theory, and based on such studies, the design and construction of an intense hollow beam generator are described. Experimental results obtained with the new diode compare favorably with both the analytic theory and the results of numerical simulations. The device currently produces 2-MeV electrons at beam currents of 65--70 kA

Change of the equivalent circuit constants accompanied by the degradation and recovery of efficiency on a-Si solar cells; A-Si taiyo denchi no koritsu no rekka to kaifuku ni tomonau toka kairo teisu no henka

Energy Technology Data Exchange (ETDEWEB)

Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

1997-11-25

Investigations were given on how the equivalent circuit constants change when efficiency of amorphous silicon solar cells changes with time in light degradation and temperature recovery. In the experiment, light irradiation tests under a constant temperature and light intensity condition, followed by recovery tests under a constant temperature and constant weak light intensity or constant temperature condition were repeated continuously. According to the result of an experiment on single layer type cells, the change in each equivalent circuit constant in association with degradation in efficiency and file factor and variation in recovery is reversible mostly. However, a slightly irreversible component was recognized only in the initial degradation process in series resistance and diode factor values. With regard to stacked cells, it was suggested that the main players to determine cell characteristics during the processes of deterioration and recovery take turns among the three layers as follows: the shape of the time-based change in the efficiency comes different and is not saturating; as the efficiency decreases, the extent of the change increases in the diode factor and series resistance; and the path the deterioration takes differs from that the recovery takes. 2 refs., 12 figs.

In Vivo Diode Dosimetry for Imrt Treatments Generated by Pinnacle Treatment Planning System

International Nuclear Information System (INIS)

Alaei, Parham; Higgins, Patrick D.; Gerbi, Bruce J.

2009-01-01

Dose verification using diodes has been proposed and used for intensity modulated radiation therapy (IMRT) treatments. We have previously evaluated diode response for IMRT deliveries planned with the Eclipse/Helios treatment planning system. The Pinnacle treatment planning system generates plans that are delivered in a different fashion than Eclipse. Whereas the Eclipse-generated segments are delivered in organized progression from one side of each field to the other, Pinnacle-generated segments are delivered in a much more randomized fashion to different areas within the field. This makes diode measurements at a point more challenging because the diode may be exposed fully or partially to multiple small segments during one single field's treatment as opposed to being exposed to very few segments scanning across the diode during an Eclipse-generated delivery. We have evaluated in vivo dosimetry for Pinnacle-generated IMRT plans and characterized the response of the diode to various size segments on phantom. We present results of patient measurements on approximately 300 fields, which show that 76% of measurements agree to within 10% of the treatment-plan generated calculated doses. Of the other 24%, about 11% are within 15% of the calculated dose. Comparison of these with phantom measurements indicates that many of the discrepancies are due to diode positioning on patients and increased diode response at short source-to-surface distances (SSDs), with the remainder attributable to other factors such as segment size and partial irradiation of the diode

Fibrolipoma of the lip treated by diode laser surgery: A case report

Directory of Open Access Journals (Sweden)

Capodiferro Saverio

2008-09-01

Full Text Available Abstract Introduction Several neoplasms of the adipose tissue can involve the soft tissues of the head and neck region. These neoplasms are mainly treated surgically and an accurate histological examination is mandatory for a precise diagnosis. Case presentation We report a case of fibrolipoma involving the lower lip of a 43-year-old man, which was successfully treated by diode laser surgery. This approach allowed adequate resection of the neoplasm with minimal damage to the adjacent tissues, thus reducing post-surgical scarring. Conclusion Diode laser surgery for the treatment of benign lesions of the oral mucosa appears to be a convenient alternative to conventional blade surgery and has proved to be effective for the excision of fibrolipoma of the lip. The possibility of avoiding direct suture after excision is surely helpful when aesthetic areas, such as the lip, are surgically treated. For these reasons, and also considering the lower histological alteration of the specimen obtained with diode laser surgery if adequately used, the diode laser is undoubtedly a good alternative to conventional surgery.

Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

International Nuclear Information System (INIS)

Baliga, B.J.; Walden, J.P.

1983-01-01

Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

A Real-Time Rejection Circuit to Automatically Reject Multiple Interfering Hopping Signals While Passing a Lower Level Desired Signal.

Science.gov (United States)

contain the low level desired frequency components that are passed through an inverse transform device for producing a frequency domain signal of the desired signal uncorrupted by unwanted signals. Patent applications. (RRH)

Interrogating the topological robustness of gene regulatory circuits by randomization.

Directory of Open Access Journals (Sweden)

Bin Huang

2017-03-01

Full Text Available One of the most important roles of cells is performing their cellular tasks properly for survival. Cells usually achieve robust functionality, for example, cell-fate decision-making and signal transduction, through multiple layers of regulation involving many genes. Despite the combinatorial complexity of gene regulation, its quantitative behavior has been typically studied on the basis of experimentally verified core gene regulatory circuitry, composed of a small set of important elements. It is still unclear how such a core circuit operates in the presence of many other regulatory molecules and in a crowded and noisy cellular environment. Here we report a new computational method, named random circuit perturbation (RACIPE, for interrogating the robust dynamical behavior of a gene regulatory circuit even without accurate measurements of circuit kinetic parameters. RACIPE generates an ensemble of random kinetic models corresponding to a fixed circuit topology, and utilizes statistical tools to identify generic properties of the circuit. By applying RACIPE to simple toggle-switch-like motifs, we observed that the stable states of all models converge to experimentally observed gene state clusters even when the parameters are strongly perturbed. RACIPE was further applied to a proposed 22-gene network of the Epithelial-to-Mesenchymal Transition (EMT, from which we identified four experimentally observed gene states, including the states that are associated with two different types of hybrid Epithelial/Mesenchymal phenotypes. Our results suggest that dynamics of a gene circuit is mainly determined by its topology, not by detailed circuit parameters. Our work provides a theoretical foundation for circuit-based systems biology modeling. We anticipate RACIPE to be a powerful tool to predict and decode circuit design principles in an unbiased manner, and to quantitatively evaluate the robustness and heterogeneity of gene expression.

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H{sub 2}O mole fraction

Energy Technology Data Exchange (ETDEWEB)

Xu, Lijun, E-mail: lijunxu@buaa.edu.cn; Liu, Chang; Jing, Wenyang; Cao, Zhang [School of Instrument Science and Opto-Electronic Engineering, Beihang University, Beijing 100191 (China); Ministry of Education’s Key Laboratory of Precision Opto-Mechatronics Technology, Beijing 100191 (China); Xue, Xin; Lin, Yuzhen [School of Energy and Power Engineering, Beihang University, Beijing 100191 (China)

2016-01-15

To monitor two-dimensional (2D) distributions of temperature and H{sub 2}O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors’ knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H{sub 2}O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm{sup −1} (1343.3 nm) and 7185.6 cm{sup −1} (1391.67 nm), respectively. The tomographic sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H{sub 2}O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H{sub 2}O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis.

Trigger circuit

International Nuclear Information System (INIS)

Verity, P.R.; Chaplain, M.D.; Turner, G.D.J.

1984-01-01

A monostable trigger circuit comprises transistors TR2 and TR3 arranged with their collectors and bases interconnected. The collector of the transistor TR2 is connected to the base of transistor TR3 via a capacitor C2 the main current path of a grounded base transistor TR1 and resistive means R2,R3. The collector of transistor TR3 is connected to the base of transistor TR2 via resistive means R6, R7. In the stable state all the transistors are OFF, the capacitor C2 is charged, and the output is LOW. A positive pulse input to the base of TR2 switches it ON, which in turn lowers the voltage at points A and B and so switches TR1 ON so that C2 can discharge via R2, R3, which in turn switches TR3 ON making the output high. Thus all three transistors are latched ON. When C2 has discharged sufficiently TR1 switches OFF, followed by TR3 (making the output low again) and TR2. The components C1, C3 and R4 serve to reduce noise, and the diode D1 is optional. (author)

Local mechanical stress relaxation of Gunn diodes irradiated by protons

International Nuclear Information System (INIS)

Gradoboev, A V; Tesleva, E P

2017-01-01

The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)·10 2 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. (paper)

High frequency fishbone driven by passing energetic ions in tokamak plasmas

Science.gov (United States)

Wang, Feng; Yu, L. M.; Fu, G. Y.; Shen, Wei

2017-05-01

High frequency fishbone instability driven by passing energetic ions was first reported in the Princeton beta experiment with tangential neutral-beam-injection (Heidbrink et al 1986 Phys. Rev. Lett. 57 835-8). It could play an important role for ITER-like burning plasmas, where α particles are mostly passing particles. In this work, a generalized energetic ion distribution function and finite drift orbit width effect are considered to improve the theoretical model for passing particle driving fishbone instability. For purely passing energetic ions with zero drift orbit width, the kinetic energy δ {{W}k} is derived analytically. The derived analytic expression is more accurate as compared to the result of previous work (Wang 2001 Phys. Rev. Lett. 86 5286-8). For a generalized energetic ion distribution function, the fishbone dispersion relation is derived and is solved numerically. Numerical results show that broad and off-axis beam density profiles can significantly increase the beam ion beta threshold {βc} for instability and decrease mode frequency.

Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

International Nuclear Information System (INIS)

Zhou, C.Z.; Warburton, W.K.

1996-01-01

Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

Directory of Open Access Journals (Sweden)

Kyung-Tae Bae

2017-11-01

Full Text Available This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

Science.gov (United States)

Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

2011-02-22

Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

Active energy recovery clamping circuit to improve the performance of power converters

Science.gov (United States)

Whitaker, Bret; Barkley, Adam

2017-05-09

A regenerative clamping circuit for a power converter using clamping diodes to transfer charge to a clamping capacitor and a regenerative converter to transfer charge out of the clamping capacitor back to the power supply input connection. The regenerative converter uses a switch connected to the midpoint of a series connected inductor and capacitor. The ends of the inductor and capacitor series are connected across the terminals of the power supply to be in parallel with the power supply.

Self-Aligned van der Waals Heterojunction Diodes and Transistors.

Science.gov (United States)

Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

2018-02-14

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

Deep modulation of second-harmonic light by wavelength detuning of a laser diode

DEFF Research Database (Denmark)

Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

2017-01-01

) master oscillator power amplifier (MOPA) laser diode with separate electrical contacts for the MO and the PA. A modulation depth in excess of 97% from 0.1 Hz to 10 kHz is demonstrated. This is done by wavelength tuning of the laser diode using only a 40 mA adjustment of the current through the MO...

A gas sensor comprising two back-to-back connected Au/TiO2 Schottky diodes

Science.gov (United States)

Dehghani, Niloofar; Yousefiazari, Ehsan

2018-04-01

A miniature, but sturdy, gas sensor capable of operation at temperatures as high as 600 °C is presented. The device comprises two back-to-back connected gold/rutile Schottky diodes, which are fabricated on the opposite bases of a self-standing 100 μm-thick pellet of polycrystalline rutile. The rutile layer is formed by the direct oxidation of titanium metal in air at 900 °C, and the Au/rutile diodes are formed by the diffusion bonding of the gold wire segments to the pellet bases. The current versus voltage diagrams and gas sensing properties of the Au/rutile/Au structured device are recorded at different voltage sweeping frequencies and operating temperatures. The interesting features of these diagrams are explained based on an equivalent circuit of the device, which considers Schottky-type contacts at both bases and memristive conduction for the rutile in between. The device current is controlled by the leakage current of the reverse biased diode, which depends on the concentration of the oxygen vacancy at the Au/rutile interface and, hence, on the composition of the surrounding atmosphere. The device current increases 15 times in response to the presence of 1000 ppm of ethanol vapor in air. Consisting only of bulk gold and bulk rutile, the device is resilient to harsh environments and elevated temperatures; a suitable gas sensor for in-exhaust installation.

WE-D-BRA-07: Analysis of ArcCHECK Diode Array Performance for ViewRay Quality Assurance

International Nuclear Information System (INIS)

Ellefson, S; Culberson, W; Bednarz, B; DeWerd, L; Bayouth, J

2015-01-01

Purpose: Discrepancies in absolute dose values have been detected between the ViewRay treatment planning system and ArcCHECK readings when performing delivery quality assurance on the ViewRay system with the ArcCHECK-MR diode array (SunNuclear Corporation). In this work, we investigate whether these discrepancies are due to errors in the ViewRay planning and/or delivery system or due to errors in the ArcCHECK’s readings. Methods: Gamma analysis was performed on 19 ViewRay patient plans using the ArcCHECK. Frequency analysis on the dose differences was performed. To investigate whether discrepancies were due to measurement or delivery error, 10 diodes in low-gradient dose regions were chosen to compare with ion chamber measurements in a PMMA phantom with the same size and shape as the ArcCHECK, provided by SunNuclear. The diodes chosen all had significant discrepancies in absolute dose values compared to the ViewRay TPS. Absolute doses to PMMA were compared between the ViewRay TPS calculations, ArcCHECK measurements, and measurements in the PMMA phantom. Results: Three of the 19 patient plans had 3%/3mm gamma passing rates less than 95%, and ten of the 19 plans had 2%/2mm passing rates less than 95%. Frequency analysis implied a non-random error process. Out of the 10 diode locations measured, ion chamber measurements were all within 2.2% error relative to the TPS and had a mean error of 1.2%. ArcCHECK measurements ranged from 4.5% to over 15% error relative to the TPS and had a mean error of 8.0%. Conclusion: The ArcCHECK performs well for quality assurance on the ViewRay under most circumstances. However, under certain conditions the absolute dose readings are significantly higher compared to the planned doses. As the ion chamber measurements consistently agree with the TPS, it can be concluded that the discrepancies are due to ArcCHECK measurement error and not TPS or delivery system error. This work was funded by the Bhudatt Paliwal Professorship and the

Passive Guaranteed Simulation of Analog Audio Circuits: A Port-Hamiltonian Approach

Directory of Open Access Journals (Sweden)

Antoine Falaize

2016-09-01

Full Text Available We present a method that generates passive-guaranteed stable simulations of analog audio circuits from electronic schematics for real-time issues. On one hand, this method is based on a continuous-time power-balanced state-space representation structured into its energy-storing parts, dissipative parts, and external sources. On the other hand, a numerical scheme is especially designed to preserve this structure and the power balance. These state-space structures define the class of port-Hamiltonian systems. The derivation of this structured system associated with the electronic circuit is achieved by an automated analysis of the interconnection network combined with a dictionary of models for each elementary component. The numerical scheme is based on the combination of finite differences applied on the state (with respect to the time variable and on the total energy (with respect to the state. This combination provides a discrete-time version of the power balance. This set of algorithms is valid for both the linear and nonlinear case. Finally, three applications of increasing complexities are given: a diode clipper, a common-emitter bipolar-junction transistor amplifier, and a wah pedal. The results are compared to offline simulations obtained from a popular circuit simulator.

Resonance circuits for adiabatic circuits

Directory of Open Access Journals (Sweden)

C. Schlachta

2003-01-01

Full Text Available One of the possible techniques to reduces the power consumption in digital CMOS circuits is to slow down the charge transport. This slowdown can be achieved by introducing an inductor in the charging path. Additionally, the inductor can act as an energy storage element, conserving the energy that is normally dissipated during discharging. Together with the parasitic capacitances from the circuit a LCresonant circuit is formed.

Quantum information processing with superconducting circuits: a review

Science.gov (United States)

Wendin, G.

2017-10-01

During the last ten years, superconducting circuits have passed from being interesting physical devices to becoming contenders for near-future useful and scalable quantum information processing (QIP). Advanced quantum simulation experiments have been shown with up to nine qubits, while a demonstration of quantum supremacy with fifty qubits is anticipated in just a few years. Quantum supremacy means that the quantum system can no longer be simulated by the most powerful classical supercomputers. Integrated classical-quantum computing systems are already emerging that can be used for software development and experimentation, even via web interfaces. Therefore, the time is ripe for describing some of the recent development of superconducting devices, systems and applications. As such, the discussion of superconducting qubits and circuits is limited to devices that are proven useful for current or near future applications. Consequently, the centre of interest is the practical applications of QIP, such as computation and simulation in Physics and Chemistry.

Band-pass filtering algorithms for adaptive control of compressor pre-stall modes in aircraft gas-turbine engine

Science.gov (United States)

Kuznetsova, T. A.

2018-05-01

The methods for increasing gas-turbine aircraft engines' (GTE) adaptive properties to interference based on empowerment of automatic control systems (ACS) are analyzed. The flow pulsation in suction and a discharge line of the compressor, which may cause the stall, are considered as the interference. The algorithmic solution to the problem of GTE pre-stall modes’ control adapted to stability boundary is proposed. The aim of the study is to develop the band-pass filtering algorithms to provide the detection functions of the compressor pre-stall modes for ACS GTE. The characteristic feature of pre-stall effect is the increase of pressure pulsation amplitude over the impeller at the multiples of the rotor’ frequencies. The used method is based on a band-pass filter combining low-pass and high-pass digital filters. The impulse response of the high-pass filter is determined through a known low-pass filter impulse response by spectral inversion. The resulting transfer function of the second order band-pass filter (BPF) corresponds to a stable system. The two circuit implementations of BPF are synthesized. Designed band-pass filtering algorithms were tested in MATLAB environment. Comparative analysis of amplitude-frequency response of proposed implementation allows choosing the BPF scheme providing the best quality of filtration. The BPF reaction to the periodic sinusoidal signal, simulating the experimentally obtained pressure pulsation function in the pre-stall mode, was considered. The results of model experiment demonstrated the effectiveness of applying band-pass filtering algorithms as part of ACS to identify the pre-stall mode of the compressor for detection of pressure fluctuations’ peaks, characterizing the compressor’s approach to the stability boundary.

Signal detection circuit design of HCN measurement system based on TDLAS

Science.gov (United States)

He, Chungui; Zhang, Yujun; Chen, Chen; Lu, Yibing; Liu, Guohua; Gao, Yanwei; You, Kun; He, Ying; Zhang, Kai; Liu, Wenqing

2016-10-01

Hydrogen cyanide gas leakage may exist in the petrochemical industry, smelting plant, and other industrial processes, causing serious harm to the environment, and even threatening the safety of personnel. So the continuous detection of HCN gas plays an important role in the prevention of risk in production process and storage environment that existing hydrogen cyanide gas. The Tunable Diode Laser Technology (TDLAS) has advantages of non-contact, high sensitivity, high selectivity, and fast response time, etc., which is one of the ideal method of gas detection technologies and can be used to measure the hydrogen cyanide concentration. This paper studies the HCN detection system based on TDLAS technology, selects the absorption lines of hydrogen cyanide in 6539.12cm-1, and utilizes the center wavelength of 1.529μm distributed feedback (DFB) laser as a light source. It is discussed in detail on technical requirements of a high frequency modulated laser signal detection circuit, including noise level, gain, and bandwidth. Based on the above theory, the high frequency modulation preamplifier circuit and main amplifier circuit are designed for InGaAs photoelectric detector. The designed circuits are calculation analyzed with corresponding formula and simulation analyzed based on the Multisim software.

A new rectenna circuit using a bow-tie antenna for the conversion of microwave power to dc power

Science.gov (United States)

Tran, Michael; Nguyen, Cam

1993-01-01

The novel rectenna circuit presented, which integrated a bowtie antenna with a diode, is capable of broadband, high-efficiency operation, and is insensitive to incident field angle. The device is noted, moreover, to behave as a lowpass filter for dc output. For 2.45 GHz operation, a 79-percent conversion efficiency has been demonstrated.

Vortex diode jet

Science.gov (United States)

Houck, Edward D.

1994-01-01

A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

Performance of single-pass and by-pass multi-step multi-soil-layering systems for low-(C/N)-ratio polluted river water treatment.

Science.gov (United States)

Wei, Cai-Jie; Wu, Wei-Zhong

2018-09-01

Two kinds of hybrid two-step multi-soil-layering (MSL) systems loaded with different filter medias (zeolite-ceramsite MSL-1 and ceramsite-red clay MSL-2) were set-up for the low-(C/N)-ratio polluted river water treatment. A long-term pollutant removal performance of these two kinds of MSL systems was evaluated for 214 days. By-pass was employed in MSL systems to evaluate its effect on nitrogen removal enhancement. Zeolite-ceramsite single-pass MSL-1 system owns outstanding ammonia removal capability (24 g NH 4 + -Nm -2 d -1 ), 3 times higher than MSL-2 without zeolite under low aeration rate condition (0.8 × 10 4  L m -2 .h -1 ). Aeration rate up to 1.6 × 10 4  L m -2 .h -1 well satisfied the requirement of complete nitrification in first unit of both two MSLs. However, weak denitrification in second unit was commonly observed. By-pass of 50% influent into second unit can improve about 20% TN removal rate for both MSL-1 and MSL-2. Complete nitrification and denitrification was achieved in by-pass MSL systems after addition of carbon source with the resulting C/N ratio up to 2.5. The characters of biofilms distributed in different sections inside MSL-1 system well illustrated the nitrogen removal mechanism inside MSL systems. Two kinds of MSLs are both promising as an appealing nitrifying biofilm reactor. Recirculation can be considered further for by-pass MSL-2 system to ensure a complete ammonia removal. Copyright © 2018 Elsevier Ltd. All rights reserved.

Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

Science.gov (United States)

Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

2009-02-10

Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

Modulation of anxiety circuits by serotonergic systems

DEFF Research Database (Denmark)

Lowry, Christopher A; Johnson, Philip L; Hay-Schmidt, Anders

2005-01-01

of emotionally salient events, often when both rewarding and aversive outcomes are possible. In this review, we highlight recent advances in our understanding of the neural circuits regulating anxiety states and anxiety-related behavior with an emphasis on the role of brainstem serotonergic systems in modulating...... anxiety-related circuits. In particular, we explore the possibility that the regulation of anxiety states and anxiety-related behavior by serotonergic systems is dependent on a specific, topographically organized mesolimbocortical serotonergic system that originates in the mid-rostrocaudal and caudal...

Study of relativistic electron beams generated by a foilless diode

International Nuclear Information System (INIS)

Jones, M.E.; Thode, L.E.

1979-01-01

Preliminary results of a numerical and analytical study of foilless diodes are presented. The work produced an electron emission algorithm for the particle-in-cell simulation code CCUBE. Diode performance was studied as a function of applied magnetic field strength and simple geometry changes. Annular electron beams with an energy of 5 MeV appear obtainable with densities exceeding 10 14 cm -3 . 8 figures

A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

International Nuclear Information System (INIS)

Hazra, Purnima; Jit, S.

2014-01-01

This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

International Nuclear Information System (INIS)

Chen Fangxiong; Ma Heping; Jia Hailong; Shi Yin; Lin Min; Dai, Forster

2009-01-01

An asymmetric MOSFET-C band-pass filter (BPF) with on chip charge pump auto-tuning is presented. It is implemented in UMC (United Manufacturing Corporation) 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point (IIP3) is 16.621 dBm, with 50 Ω as the source impedance. The input referred noise is about 47.455 μV rms . The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm 2 and it can be utilized in GPS (global positioning system) and Bluetooth systems. (semiconductor integrated circuits)

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

Energy Technology Data Exchange (ETDEWEB)

Chen Fangxiong; Ma Heping; Jia Hailong; Shi Yin [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Lin Min [Suzhou-CAS Semiconductors Integrated Technology Research Center, Suzhou 215021 (China); Dai, Forster, E-mail: fxchen@semi.ac.c [Department of Electrical and Computer Engineering, Auburn University, AL 36849 (United States)

2009-08-15

An asymmetric MOSFET-C band-pass filter (BPF) with on chip charge pump auto-tuning is presented. It is implemented in UMC (United Manufacturing Corporation) 0.18 {mu}m CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point (IIP3) is 16.621 dBm, with 50 {Omega} as the source impedance. The input referred noise is about 47.455 {mu}V{sub rms}. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm{sup 2} and it can be utilized in GPS (global positioning system) and Bluetooth systems. (semiconductor integrated circuits)

Operation and maintenance manual for diode performance analysis program DIODE0

International Nuclear Information System (INIS)

Boyer, W.B.

1977-03-01

This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Implementation of dosimetric quality control on IMRT and VMAT treatments in radiotherapy using diodes; Implementacion de control de calidad dosimetrico en tratamientos de IMRT y VMAT en radioterapia usando diodos

Energy Technology Data Exchange (ETDEWEB)

Gonzales, A.; Garcia, B.; Ramirez, J.; Marquina, J., E-mail: andres.gonzales@aliada.com.pe [ALIADA, Oncologia Integral, Av. Jose Galvez Barrenechea 1044, San Isidro, Lima 27 (Peru)

2014-08-15

To implement quality control of IMRT and VMAT treatments Rapid Arc radiotherapy using diode array. Were tested 90 patients with IMRT and VMAT Rapid Arc, comparing the planned dose to the dose administered, used the Map-Check-2 and Arc-Check of Sun Nuclear, they using the gamma factor for calculating and using comparison parameters 3% / 3m m. The statistic shows that the quality controls of the 90 patients analyzed, presented a percentage of diodes that pass the test between 96,7% and 100,0% of the irradiated diodes. Implemented in Clinical ALIADA Oncologia Integral, the method for quality control of IMRT and VMAT treatments Rapid Arc radiotherapy using diode array. (Author)

Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

International Nuclear Information System (INIS)

Hazdra, P.; Vobecky, J.; Brand, K.

2002-01-01

Application of radiation defects for adjustment of power diode parameters is demonstrated. Local lifetime control (LLC) by proton and alpha-particle irradiation with energies 1.8-12.1 MeV is compared with uniform lifetime killing by 4.5 MeV electrons. The influence of both the techniques on static and dynamic parameters of modified diodes is experimentally established and explained by means of state-of-the-art simulation system. Optimization means and limits of lifetime control by irradiation techniques are discussed, as well

Notational analysis on tactical passing skills used by collegiate ...

African Journals Online (AJOL)

Notational analysis on tactical passing skills used by collegiate players in an indoor hockey masum tournament. K.N. Hasnor, H Hizan, M.I. Shahril, N.A. Kosni, M.R. Abdullah, A.B.H.M. Maliki, S.M. Mat-Rasid ...

Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits.

Science.gov (United States)

Jeon, Pyo Jin; Kim, Jin Sung; Lim, June Yeong; Cho, Youngsuk; Pezeshki, Atiye; Lee, Hee Sung; Yu, Sanghyuck; Min, Sung-Wook; Im, Seongil

2015-10-14

Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Many 2D-based field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made too. However, those CMOS devices seldom showed the most important advantage of typical CMOS: low power consumption. Here, we adopted p-WSe2 and n-MoS2 nanosheets separately for the channels of bottom-gate-patterned FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same glass substrate. Our hetero-CMOS inverters with electrically isolated FETs demonstrate novel and superior device performances of a maximum voltage gain as ∼27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5VDD (supply voltage, VDD=5 V) with a transition voltage of 2.3 V, and ∼800 μs for switching delay. Moreover, our glass-substrate CMOS device nicely performed digital logic (NOT, OR, and AND) and push-pull circuits for organic light-emitting diode switching, directly displaying the prospective of practical applications.

A novel analog/digital reconfigurable automatic gain control with a novel DC offset cancellation circuit

Energy Technology Data Exchange (ETDEWEB)

He Xiaofeng; Ye Tianchun [Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China); Mo Taishan; Ma Chengyan, E-mail: hexiaofeng@casic.ac.cn [Hangzhou Zhongke Microelectronics Co, Ltd, Hangzhou 310053 (China)

2011-02-15

An analog/digital reconfigurable automatic gain control (AGC) circuit with a novel DC offset cancellation circuit for a direct-conversion receiver is presented. The AGC is analog/digital reconfigurable in order to be compatible with different baseband chips. What's more, a novel DC offset cancellation (DCOC) circuit with an HPCF (high pass cutoff frequency) less than 10 kHz is proposed. The AGC is fabricated by a 0.18 {mu}m CMOS process. Under analog control mode, the AGC achieves a 70 dB dynamic range with a 3 dB-bandwidth larger than 60 MHz. Under digital control mode, through a 5-bit digital control word, the AGC shows a 64 dB gain control range by 2 dB each step with a gain error of less than 0.3 dB. The DC offset cancellation circuits can suppress the output DC offset voltage to be less than 1.5 mV, while the offset voltage of 40 mV is introduced into the input. The overall power consumption is less than 3.5 mA, and the die area is 800 x 300 {mu}m{sup 2}. (semiconductor integrated circuits)

Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

Science.gov (United States)

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

2016-02-01

Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

Wavy Channel TFT-Based Digital Circuits

KAUST Repository

Hanna, Amir

2016-02-23

We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage.

Wavy Channel TFT-Based Digital Circuits

KAUST Repository

Hanna, Amir; Hussain, Aftab M.; Hussain, Aftab M.; Hussain, Aftab M.; Omran, Hesham; Alsharif, Sarah M.; Salama, Khaled N.; Hussain, Muhammad Mustafa

2016-01-01

We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage.

Multi-pass spectroscopic ellipsometry

International Nuclear Information System (INIS)

Stehle, Jean-Louis; Samartzis, Peter C.; Stamataki, Katerina; Piel, Jean-Philippe; Katsoprinakis, George E.; Papadakis, Vassilis; Schimowski, Xavier; Rakitzis, T. Peter; Loppinet, Benoit

2014-01-01

Spectroscopic ellipsometry is an established technique, particularly useful for thickness measurements of thin films. It measures polarization rotation after a single reflection of a beam of light on the measured substrate at a given incidence angle. In this paper, we report the development of multi-pass spectroscopic ellipsometry where the light beam reflects multiple times on the sample. We have investigated both theoretically and experimentally the effect of sample reflectivity, number of reflections (passes), angles of incidence and detector dynamic range on ellipsometric observables tanΨ and cosΔ. The multiple pass approach provides increased sensitivity to small changes in Ψ and Δ, opening the way for single measurement determination of optical thickness T, refractive index n and absorption coefficient k of thin films, a significant improvement over the existing techniques. Based on our results, we discuss the strengths, the weaknesses and possible applications of this technique. - Highlights: • We present multi-pass spectroscopic ellipsometry (MPSE), a multi-pass approach to ellipsometry. • Different detectors, samples, angles of incidence and number of passes were tested. • N passes improve polarization ratio sensitivity to the power of N. • N reflections improve phase shift sensitivity by a factor of N. • MPSE can significantly improve thickness measurements in thin films

Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

Science.gov (United States)

Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-06-01

In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

Tunable diode-pumped-LNA laser

International Nuclear Information System (INIS)

Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

1987-01-01

Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Progress in Applying Tunable Diode Laser Absorption Spectroscopy to Scramjet Isolators and Combustors

Science.gov (United States)

2010-05-01

us ing a T exas Instruments OPA380 transimpedance amplifier /op amp for each photodiode. This amplifier with 90 MHz of gain bandwidth is a single...spectra 4 2 Boltzmann plot for Run AC 6 3 CFD Simulations for isolator 7 4 Optical layout for diode laser system 11 5 Optical amplifier circuit 11 6...designed InGaAs photodiode arrays. These custom designed arrays amplify the signal f rom 2m m di ameter FGA21 phot odiodes ( FGA 21 f rom T horLabs

Visualization of mcr mRNA in a methanogen by fluorescence in situ hybridization with an oligonucleotide probe and two-pass tyramide signal amplification (two-pass TSA-FISH).

Science.gov (United States)

Kubota, Kengo; Ohashi, Akiyoshi; Imachi, Hiroyuki; Harada, Hideki

2006-09-01

Two-pass tyramide signal amplification-fluorescence in situ hybridization (two-pass TSA-FISH) with a horseradish peroxidase (HRP)-labeled oligonucleotide probe was applied to detect prokaryotic mRNA. In this study, mRNA of a key enzyme for methanogenesis, methyl coenzyme M reductase (mcr), in Methanococcus vannielii was targeted. Applicability of mRNA-targeted probes to in situ hybridization was verified by Clone-FISH. It was observed that sensitivity of two-pass TSA-FISH was significantly higher than that of TSA-FISH, which was further increased by the addition of dextran sulphate in TSA working solution. Signals from two-pass TSA-FISH were more reliable compared to the weak, spotty signals yielded by TSA-FISH.