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Sample records for diluted sige alloys

  1. Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys

    DEFF Research Database (Denmark)

    Leitão, J.P.; Carvalho, A.; Marques Pereira, Rui Nuno

    2011-01-01

    Photoluminescence (PL) measurements, performed in Si and Si1−xGex alloys (x= 0.0069 and 0.0125) irradiated with protons and annealed between 100 and 650 ∘C, are combined with first-principles calculations to assess the assignment of the W and X lines to the trigonal and tetragonal forms of the tr...

  2. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  3. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  4. Atomic displacements in bcc dilute alloys

    Indian Academy of Sciences (India)

    be attributed to the reliability of the measured distances which fall off quickly with each shell. Therefore, in ... field and electrical field gradients due to impurities in vanadium [13]. The effective .... Expanding ∆φ(| Rn' |) in power series of u(R0 n), one gets ... The results of each dilute alloy system are presented separately and ...

  5. Atomic displacements in bcc dilute alloys

    Indian Academy of Sciences (India)

    We present here a systematic investigation of the atomic displacements in bcc transition metal (TM) dilute alloys. We have calculated the atomic displacements in bcc (V, Cr, Fe, Nb, Mo, Ta and W) transition metals (TMs) due to 3d, 4d and 5d TMs at the substitutional site using the Kanzaki lattice static method. Wills and ...

  6. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Blanque, Celso; Ruiz, Francisco G., E-mail: franruiz@ugr.es; Godoy, Andres, E-mail: agodoy@ugr.es; Marin, Enrique G.; Donetti, Luca; Gámiz, Francisco [Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-12-28

    In this work, we analyze the influence of the alloy disorder (AD) scattering on the low-field hole mobility of Si{sub 1-x}Ge{sub x} nanowires (NWs). To do it, the electrostatic description is achieved through a self-consistent solution of the Poisson equation and the six-band k⋅p method in the cross section of the NW. The momentum relaxation time approximation is used to calculate the hole mobility, including alloy disorder and phonon scattering mechanisms, and the use of approximations to calculate the overlap integrals for the scattering matrix elements is discussed. We study the influence of the alloy disorder scattering on the total mobility compared to the phonon contribution, for different values of the AD scattering parameter proposed in the literature, and analyze the performance of SiGe NWs as a function of the Ge molar fraction for both low and high inversion charge densities.

  7. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  8. Magnetic ordering in dilute YTb and YEr alloys

    International Nuclear Information System (INIS)

    Rainford, B.D.; Kilcoyne, S.H.; Mohammed, K.A.; Lanchester, P.C.; Stanley, H.B.; Caudron, R.

    1988-01-01

    Dilute YEr alloys (Er concentration between 3% and 10%) show the existence of sinusoidally modulated antiferromagnetism down to the lowest impurity concentrations studied. Extrapolation of the Neel temperatures for both YEr and YTb suggests a critical concentration is ≅ 0.8% Tb, Er. Ordering in such dilute alloys may result from exchange enhancement in the yttrium host

  9. Magnetic ordering in dilute YTb and YEr alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rainford, B.D.; Kilcoyne, S.H.; Mohammed, K.A.; Lanchester, P.C.; Stanley, H.B.; Caudron, R.

    1988-12-01

    Dilute YEr alloys (Er concentration between 3% and 10%) show the existence of sinusoidally modulated antiferromagnetism down to the lowest impurity concentrations studied. Extrapolation of the Neel temperatures for both YEr and YTb suggests a critical concentration is /approx equal/ 0.8% Tb, Er. Ordering in such dilute alloys may result from exchange enhancement in the yttrium host.

  10. Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

    Science.gov (United States)

    Abs da Cruz, Carolina; Katcho, Nebil A.; Mingo, Natalio; Veiga, Roberto G. A.

    2013-10-01

    We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering.

  11. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    International Nuclear Information System (INIS)

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  12. Influence of irradiation on mechanical properties of Si-Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

    2017-07-15

    Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  14. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  15. GRAIN-BOUNDARY PRECIPITATION UNDER IRRADIATION IN DILUTE BINARY ALLOYS

    Institute of Scientific and Technical Information of China (English)

    S.H. Song; Z.X. Yuan; J. Liu; R.G.Faulkner

    2003-01-01

    Irradiation-induced grain boundary segregation of solute atoms frequently bring about grain boundary precipitation of a second phase because of its making the solubility limit of the solute surpassed at grain boundaries. Until now the kinetic models for irradiation-induced grain boundary precipitation have been sparse. For this reason, we have theoretically treated grain boundary precipitation under irradiation in dilute binary alloys. Predictions ofγ'-Ni3Si precipitation at grain boundaries ave made for a dilute Ni-Si alloy subjected to irradiation. It is demonstrated that grain boundary silicon segregation under irradiation may lead to grain boundaryγ'-Ni3 Si precipitation over a certain temperature range.

  16. Atomic displacements in dilute alloys of Cr, Nb and Mo

    Indian Academy of Sciences (India)

    physics pp. 497–514. Atomic displacements in dilute alloys of Cr, Nb and Mo ... used to calculate dynamical matrix and the impurity-induced forces up to second nearest ... origin, the lattice is strained, and the host atoms get displaced to new ...

  17. Interaction between impurities in Ag dilute alloys

    International Nuclear Information System (INIS)

    Krolas, K.; Wodniecka, B.; Wodniecki, P.; Uniwersytet Jagiellonski, Krakow

    1977-01-01

    Time dependent perturbed angular correlation measurements of gamma radiation in 111 Cd after 111 In decay were performed in AgPd and AgPt alloys. The concentration of Pd or Pt atoms being the nearest neighbours to the probe atoms is much higher than that one deduced from random impurity distribution. This effect results from the attractive interaction between the In probe atoms and Pt or Pd impurity atoms in silver host lattice. The binding energy of InPd and InPt complexes was measured as 135 +- 9 meV and 171 +- 9 meV, respectively. (author)

  18. Thermal stress relieving of dilute uranium alloys

    International Nuclear Information System (INIS)

    Eckelmeyer, K.H.

    1980-01-01

    The kinetics of thermal stress relieving of uranium - 2.3 wt. % niobium, uranium - 2.0 wt. % molybdenum, and uranium - 0.75 wt. % titanium are reported and discussed. Two temperature regimes of stress relieving are observed. In the low temperature regime (T 0 C) the process appears to be controlled by an athermal microplasticity mechanism which can be completely suppressed by prior age hardening. In the high temperature regime (300 0 C 0 C) the process appears to be controlled by a classical diffusional creep mechanism which is strongly dependent on temperature and time. Stress relieving is accelerated in cases where it occurs simultaneously with age hardening. The potential danger of residual stress induced stress corrosion cracking of uranium alloys is discussed. It is shown that the residual stress relief which accompanies age hardening of uranium - 0.75% titanium more than compensates for the reduction in K/sub ISCC/ caused by aging. As a result, age hardening actually decreases the susceptibility of this alloy to residual stress induced stress corrosion cracking

  19. Thermal stress relieving of dilute uranium alloys

    International Nuclear Information System (INIS)

    Eckelmeyer, K.H.

    1981-01-01

    The kinetics of thermal stress relieving of uranium - 2.3 wt % niobium, uranium - 2.0 wt % molybdenum, and uranium - 0.75 wt % titanium are reported and discussed. Two temperature regimes of stress relieving are observed. In the low temperature regime (T 0 C) the process appears to be controlled by an athermal microplasticity mechanism which can be completely suppressed by prior age hardening. In the high temperature regime (300 0 C 0 C) the process appears to be controlled by a classical diffusional creep mechanism which is strongly dependent on temperature and time. Stress relieving is accelerated in cases where it occurs simultaneously with age hardening. The potential danger of residual stress induced stress corrosion cracking of uranium alloys is discussed

  20. Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

    Science.gov (United States)

    Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

    2018-05-01

    SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

  1. Electron paramagnetic resonance studies of defects in dilute magnetic alloys

    International Nuclear Information System (INIS)

    Suss, J.T.; Raizman, A.

    1980-01-01

    The EPR spectrum of erbium was used to study the effects of cold-working (rolling and mechanical polishing) in dilute gold-erbium alloys. Variation in the EPR linewidth, intensity and asymmetry parameter (A/B ratio) were investigated. Most of the results could be interpreted in terms of segregation of erbium ions to subgrain boundaries (dislocations) in a surface layer of a few thousand Angstroms. (author)

  2. Dissociation of dilute immiscible copper alloy thin films

    International Nuclear Information System (INIS)

    Barmak, K.; Lucadamo, G. A.; Cabral, C. Jr.; Lavoie, C.; Harper, J. M. E.

    2000-01-01

    The dissociation behavior of dilute, immiscible Cu-alloy thin films is found to fall into three broad categories that correlate most closely with the form of the Cu-rich end of the binary alloy phase diagrams. Available thermodynamic and tracer diffusion data shed further light on alloy behavior. Eight alloying elements were selected for these studies, with five elements from groups 5 and 6, two from group 8, and one from group 11 of the periodic table. They are respectively V, Nb, Ta, Cr, Mo, Fe, Ru, and Ag. The progress of precipitation in approximately 500-nm-thick alloy films, containing 2.5-3.8 at. % solute, was followed with in situ resistance and stress measurements as well as with in situ synchrotron x-ray diffraction. In addition, texture analysis and transmission electron microscopy were used to investigate the evolution of microstructure and texture of Cu(Ta) and Cu(Ag). For all eight alloys, dissociation occurred upon heating, with the rejection of solute and evolution of microstructure often occurring in multiple steps that range over several hundred degrees between approximately 100 and 900 degree sign C. However, in most cases, substantial reductions in resistivity of the films took place below 400 degree sign C, at temperatures of interest to copper metallization schemes for silicon chip technology. (c) 2000 American Institute of Physics

  3. The solidification behavior of dilute aluminium-scandium alloys

    International Nuclear Information System (INIS)

    Norman, A.F.; Prangnell, P.B.; McEwen, R.S.

    1998-01-01

    The solidification behavior of dilute Sc containing Al alloys has been investigated. In binary Al-Sc alloys, Sc additions greater than the eutectic composition (0.55 wt%) were found to produce a remarkable refinement in the grain size of aluminum castings, of two orders of magnitude, due to the formation of the primary Al 3 Sc intermetallic phase during solidification. The refinement in grain size only occurred in hypereutectic compositions and was shown to be far greater than can be achieved by conventional Al grain refiners. Grain refinement by the addition of Sc is accompanied by a change in growth morphology from dendritic, in the large unrefined grains, to fine spherical grains with a divorced eutectic appearing on the grain boundaries in the refined castings. Similar levels of refinement were observed in Al-Sc-Zr and Al-Cu-Sc alloys. In the latter, a change in the segregation behavior of Cu was observed, from a strongly interdendritic segregation pattern to a more homogeneous distribution. The supersaturated Al-Sc solid solution can decompose via a discontinuous precipitation reaction to form coherent rod-like precipitates of the L1 2 Al 3 Sc phase

  4. Precipitation hardening in dilute Al–Zr alloys

    Directory of Open Access Journals (Sweden)

    Pedro Henrique Lamarão Souza

    2018-01-01

    Full Text Available The aim of this study was to investigate the effect of solute content (hipoperitectic Al–0.22 wt.%Zr and hiperperitectic Al–0.32 wt.%Zr on the precipitation hardening and microstructural evolution of dilute Al–Zr alloys isothermally aged. The materials were conventionally cast in a muffle furnace, solidified in a water-cooled Cu mold and subsequently heat-treated at the temperature of 650 K (377 °C for 4, 12, 24, 100 and 400 h. Mechanical characterization was performed at room temperature, using a microhardness tester and microstructural characterization was carried out on a Transmission Electron Microscope – TEM. The observed microhardness values increased during isothermal aging, due to the precipitation of nanometer-scale Al3Zr L12 particles. Peak strength was achieved within 100 h of aging. After aging for 400 h, microhardness values presented a slight decrease for both alloys, thus indicating overaging due to the coalescence of precipitates. Microhardness values increased with solute content, due to the precipitation of a higher number density of finer precipitates. After 400 h of heat-treating, coalescence was higher for the alloy with lower solute content and, also, the presence of antiphase boundaries – APBs, planar faults associated with the L12 to D023 structural transition, were observed. Comparing theoretical calculations of the increment in strength due to precipitation strengthening with experimental results, it was observed that their values are in reasonable agreement. The Orowan dislocation looping mechanism takes place during precipitation hardening for both alloys in the peak hardness condition.

  5. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  6. Amorphization threshold in Si-implanted strained SiGe alloy layers

    International Nuclear Information System (INIS)

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  7. Irradiation-induced patterning in dilute Cu–Fe alloys

    International Nuclear Information System (INIS)

    Stumphy, B.; Chee, S.W.; Vo, N.Q.; Averback, R.S.; Bellon, P.; Ghafari, M.

    2014-01-01

    Compositional patterning in dilute Cu 1−x Fe x (x ≈ 12%) induced by 1.8 MeV Kr + irradiation was studied as a function of temperature using atom probe tomography. Irradiation near room temperature led to homogenization of the sample, whereas irradiation at 300 °C and above led to precipitation and macroscopic coarsening. Between these two temperatures the irradiated alloys formed steady state patterns of composition where precipitates grew to a fixed size. The size in this regime increased somewhat with temperature. It was also observed that the steady state concentrations of Fe in Cu matrix and Cu in the Fe precipitates both greatly exceeded their equilibrium solubilities, with the degree of supersaturation in each phase decreasing with increasing temperature. In the macroscopic coarsening regime, the Fe-rich precipitates showed indications of a “cherry-pit” structure, with Cu precipitates forming within the Fe precipitates. In the patterning regime, interfaces between Fe-rich precipitates and the Cu-rich matrix were irregular and diffuse

  8. Linear microstructural features in R5(Si,Ge)4-type alloys: Difficulties in identification

    International Nuclear Information System (INIS)

    Chumbley, L.S.; Ugurlu, O.; McCallum, R.W.; Dennis, K.W.; Mudryk, Y.; Gschneidner, K.A.; Pecharsky, V.K.

    2008-01-01

    A brief review of the current literature concerning compounds based upon the R 5 (Si x Ge 1-x ) 4 structure reveals that essentially all examined alloys contain 'linear features' similar to those first observed by Szade et al. on the surface of Gd 5 Si 4 , Gd 5 Si 2 Ge 2 and Gd 5 Ge 4 samples. Attempts to characterize these features, using a variety of techniques, have proven to be a difficult task. Rather than becoming clearer and better understood, discrepancies in the reported data have resulted in much confusion. A series of comprehensive experiments involving optical, scanning and transmission electron microscopy, X-ray diffractometry, magnetization, and heat capacity measurements have been performed in an attempt to clarify the situation. These experiments, coupled with a critical examination of published data, allow certain misconceptions and apparent contradictions to be understood and explained. Of major importance is the discovery that the volume fraction of the linear feature present is far lower than what one may estimate on the basis of etched samples. The results of this study support previous data that show the linear features are a second phase of composition R 5 (Si x Ge 1-x ) 3 , and reveal the various difficulties associated with proper identification of this phase due to its small size scale and low volume percentage

  9. Diffusion coefficients of alloying elements in dilute Mg alloys: A comprehensive first-principles study

    International Nuclear Information System (INIS)

    Zhou, Bi-Cheng; Shang, Shun-Li; Wang, Yi; Liu, Zi-Kui

    2016-01-01

    First-principles calculations based on density functional theory have been used to calculate the temperature-dependent dilute tracer diffusion coefficients for 47 substitutional alloying elements in hexagonal closed packed (hcp) Mg by combining transition state theory and an 8-frequency model. The minimum energy pathways and the saddle point configurations during solute migration are calculated with the climbing image nudged elastic band method. Vibrational properties are obtained using the quasi-harmonic Debye model with inputs from first-principles calculations. An improved generalized gradient approximation of PBEsol is used in the present first-principles calculations, which is able to well describe both vacancy formation energies and vibrational properties. It is found that the solute diffusion coefficients in hcp Mg are roughly inversely proportional to the bulk modulus of the dilute alloys, which reflects the solutes' bonding to Mg. Transition metal elements with d electrons show strong interactions with Mg and have large diffusion activation energies. Correlation effects are not negligible for solutes Ca, Na, Sr, Se, Te, and Y, in which the direct solute migration barriers are much smaller than the solvent (Mg) migration barriers. Calculated diffusion coefficients are in remarkable agreement with available experimental data in the literature.

  10. Magnetic susceptibility of Dirac fermions, Bi-Sb alloys, interacting Bloch fermions, dilute nonmagnetic alloys, and Kondo alloys

    Energy Technology Data Exchange (ETDEWEB)

    Buot, Felix A., E-mail: fbuot@gmu.edu [Computational Materials Science Center, George Mason University, Fairfax, VA 22030 (United States); TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines); C& LB Research Institute, Carmen, Cebu 6005 (Philippines); Otadoy, Roland E.S.; Rivero, Karla B. [TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines)

    2017-03-01

    Wide ranging interest in Dirac Hamiltonian is due to the emergence of novel materials, namely, graphene, topological insulators and superconductors, the newly-discovered Weyl semimetals, and still actively-sought after Majorana fermions in real materials. We give a brief review of the relativistic Dirac quantum mechanics and its impact in the developments of modern physics. The quantum band dynamics of Dirac Hamiltonian is crucial in resolving the giant diamagnetism of bismuth and Bi-Sb alloys. Quantitative agreement of the theory with the experiments on Bi-Sb alloys has been achieved, and physically meaningful contributions to the diamagnetism has been identified. We also treat relativistic Dirac fermion as an interband dynamics in uniform magnetic fields. For the interacting Bloch electrons, the role of translation symmetry for calculating the magnetic susceptibility avoids any approximation to second order in the field. The expressions for magnetic susceptibility of dilute nonmagnetic alloys give a firm theoretical foundation of the empirical formulas used in fitting experimental results. The unified treatment of all the above calculations is based on the lattice Weyl-Wigner formulation of discrete phase-space quantum mechanics. For completeness, the magnetic susceptibility of Kondo alloys is also given since Dirac fermions in conduction band and magnetic impurities exhibit Kondo effect.

  11. Effect of diluted alloying elements on mechanical properties of iron

    International Nuclear Information System (INIS)

    Hassan, A.A.S.

    1996-01-01

    Iron and its alloys have extensive applications. The effect of solute additions on mechanical properties of iron was investigated to check the efficiency of solute atoms on strength and surface e life. Additions in the range of 0.1 wt.% and 0.3 wt.% of alloying elements of Cu,Ni and Si were used. Samples of grains size ranged from 6-40 m which have been prepared by annealing followed by furnace cooling. The recrystallization temperature increases with alloying addition (475 degree C for Fe-0.3 wt. % C alloy compared to 375 degree C for pure iron). Si and Cu additions inhibit grain growth of iron whereas Ni addition enhances it.Addition of Si or Ni to iron induced softening below room temperature whereas addition of Cu caused hardening. The work hardening parameters decreased due to alloying additions. The strength coefficient K was 290 M N/m2 for Fe-03 wt % Ni compared to 340 M N/m2 for pure iron. The work hardening exponent n is 0.12 for fe-0.3 wt. Cu alloy compared to 0.17 for pure iron. All the investigated alloys fulfilled the Hall-Petch relation at liquid Nitrogen and at room temperature. Alloying addition which caused softening addition which caused hardening increased the Half-Petch parameters. Ni addition favors ductility of iron whereas Cu addition reduces it. Alloying additions generally lead to brittle fracture and decrease the crack resistance of iron. 9 tabs., 55 figs., 103 refs

  12. High field Moessbauer study of dilute Ir-(Fe) alloys

    International Nuclear Information System (INIS)

    Takabatake, Toshiro; Mazaki, Hiromasa; Shinjo, Teruya.

    1981-01-01

    The magnetic behavior of very dilute Fe impurities in Ir has been studied by means of Moessbauer measurement in external fields up to 80 kOe at 4.2 K. The saturation hyperfine field increases in proportion to the external field up to the maximum magnetic field available. This means that for a localized spin fluctuation system IrFe, the effective magnetic moment associated with Fe impurities is induced in proportion to the external field. No anomalous spectrum was observed with a very dilute sample (--10 ppm 57 Co), indicating that the interaction between impurities is responsible for the anomalous spectrum previously observed with a less homogeneous sample. (author)

  13. Aluminium. II - A review of deformation properties of high purity aluminium and dilute aluminium alloys.

    Science.gov (United States)

    Reed, R. P.

    1972-01-01

    The elastic and plastic deformation behavior of high-purity aluminum and of dilute aluminum alloys is reviewed. Reliable property data, including elastic moduli, elastic coefficients, tensile, creep, fatigue, hardness, and impact are presented. Single crystal tensile results are discussed. Rather comprehensive reference lists, containing publications of the past 20 years, are included for each of the above categories. Defect structures and mechanisms responsible for mechanical behavior are presented. Strengthening techniques (alloys, cold work, irradiation, quenching, composites) and recovery are briefly reviewed.

  14. Void swelling and segregation in dilute nickel alloys

    International Nuclear Information System (INIS)

    Potter, D.I.; Rehn, L.E.; Okamoto, P.R.; Wiedersich, H.

    1977-01-01

    Five binary alloys containing 1 at.% of Al, Ti, Mo, Si and Be in nickel were irradiated at temperatures from 525 to 675 0 C with 3.5-MeV 58 Ni + ions. The resultant microstructures were examined by TEM, and void diameters, number densities and swelling are presented for each alloy over the temperature interval investigated. A systematic relation between solute misfit (size factor) and void swelling is established for these alloys. Solute concentration profiles near the irradiated surface were determined and these also exhibited a systematic behavior--undersize solutes segregated to the surface, whereas oversize solutes were depleted. The results are consistent with calculations based on strong interstitial-solute trapping by undersize solutes and vacancy-solute trapping by oversize solutes that are weak interstitial traps

  15. Rhodium segregation in dilute silver-rhodium alloys

    International Nuclear Information System (INIS)

    Krolas, K.; Sternik, M.

    1995-01-01

    Segregation of Rh in Ag-based alloys has been studied using the perturbed angular correlation of γ-rays emitted in the nuclear decay of radioactive 111 In. The formation of impurity complexes, consisting of an 111 In probe atom and one or more Rh atoms, was observed as a function of annealing time and temperature. Rhodium atom aggregation starts at about 600 K. From the fraction of 111 In bound to isolated Rh atoms the solute rhodium atom concentration was determined. It increases with the nominal alloy concentration up to about 0.04 at.% and then it is essentially constant for the nominal Rh concentration varying between 0.1 and 0.5 at.%. The solute rhodium atom concentration is 3 times larger at the melting point than at 750 K

  16. μ+ studies of dilute PdFe alloys

    International Nuclear Information System (INIS)

    Nagamine, K.; Nishida, N.; Yamazaki, T.; British Columbia Univ., Vancouver

    1976-08-01

    In order to investigate the ordering mechanism among giant moments around Fe impurities in Pd, μ + was used to probe the conduction electron polarization in PdFe alloys above and below the critical concentration of 0.1 at. % with reference to pure Pd. Below the ordering temperatures the broadening of the μ + field for 0.015 at. % Fe is substantially larger than that for 0.28 at. % Fe, when normalized to the bulk magnetization. The results can be explained in terms of an RKKY spin oscillation in the region outside the giant moment. (author)

  17. Determination of tungsten in high-alloy steels and heat resisting alloys by isotope dilution-spark source mass spectrometry

    International Nuclear Information System (INIS)

    Saito, Morimasa; Yamada, Kei; Okochi, Haruno; Hirose, Fumio

    1983-01-01

    Tungsten in high-alloy steels and heat-resisting alloys was determined by isotope dilution method combined with spark source mass spectrometry by using 183 W enriched tungsten. The spike solution was prepared by fusing tungsten trioxide in sodium carbonate. A high-alloy steel sample was dissolved in the mixture of sulfuric acid and phosphoric acid together with the spike solution; a sample of heat resisting alloy was similarly dissolved in the mixture of hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid. The solution was evaporated to give dense white fumes. Tungsten was separated from the residue by a conventional cinchonine salt-precipitation method. The salt was ignited, and the residue was mixed with graphite powder and pressed into electrodes. The isotope 183 W and 184 W were measured. The method was applied to the determination of tungsten in JSS and NBS standard high-alloy steels and JAERI standard nickel- and NBS standard cobalt-base heat resisting alloys containing more than 0.05% tungsten. The results were obtained with satisfactory precision and accuracy. However, the results obtained for JSS standard high- speed steels containing molybdenum tended to be significantly lower than the certified values. (author)

  18. Impact of dilution on the microstructure and properties of Ni-based 625 alloy coatings

    Directory of Open Access Journals (Sweden)

    Tiago Jose Antoszczyszyn

    2014-06-01

    Full Text Available Nickel-based alloy IN 625 is used to protect components of aircrafts, power generation and oil refinery due to an association of toughness and high corrosion resistance. These properties are associated with the chemical composition and microstructure of coatings which depend on the processing parameters and the composition of the component being protected. This paper assessed impact of dilution on the microstructure and properties of the Ni alloy IN 625 deposited by Plasma Transferred Arc (PTA on two substrates: carbon steel API 5L and stainless steel AISI 316L. Differences due to the interaction with the substrate were maximized analyzing single layer coatings, processed with three deposition current: 120, 150 and 180 A. Correlation with a cast Nickel-based alloy sample contributed to assess the impact of dilution on coatings. Dilution was determined by the area ratio and Vickers hardness measured on the transverse section of coatings. Scanning electron and Laser confocal microscopy and X-ray diffraction analysis were carried out to characterize the microstructure. Results indicated the increasing dilution with the deposition current was deeply influenced by the substrate. Dilution ranging from 5 to 29% was measured on coatings processed on the API 5L steel and from 22 to 51% on the low thermal conductivity AISI 316L steel substrate. Differences on the microstructure and properties of coatings can be associated with the interaction with each substrate. Higher fraction of carbides account for the higher coating hardness when processing on API 5L whereas the low thermal conductivity of AISI 316L and the higher Fe content in solid solution contributed to the lower hardness of coatings.

  19. The nature of planar faults in a dilute molybdenum-boron alloy

    International Nuclear Information System (INIS)

    Chervinskii, V.I.; Kantor, M.M.; Novikov, I.I.; Sofronova, R.M.

    1982-01-01

    Planar faults on (100) planes in dilute molybdenum-boron alloys consist of a mono- or a bilayer of boron atoms. The displacement vectors are of the general type and for mono- and bilayer faults, respectively, where the component d is close to 1/6 and normal to the fault plane. The planar faults are probably an intermediate stage of MoB or Mo 2 BC growth. (author)

  20. Numerical simulation of solute trapping phenomena using phase-field solidification model for dilute binary alloys

    Directory of Open Access Journals (Sweden)

    Henrique Silva Furtado

    2009-09-01

    Full Text Available Numerical simulation of solute trapping during solidification, using two phase-field model for dilute binary alloys developed by Kim et al. [Phys. Rev. E, 60, 7186 (1999] and Ramirez et al. [Phys. Rev. E, 69, 05167 (2004] is presented here. The simulations on dilute Cu-Ni alloy are in good agreement with one dimensional analytic solution of sharp interface model. Simulation conducted under small solidification velocity using solid-liquid interface thickness (2λ of 8 nanometers reproduced the solute (Cu equilibrium partition coefficient. The spurious numerical solute trapping in solid phase, due to the interface thickness was negligible. A parameter used in analytical solute trapping model was determined by isothermal phase-field simulation of Ni-Cu alloy. Its application to Si-As and Si-Bi alloys reproduced results that agree reasonably well with experimental data. A comparison between the three models of solute trapping (Aziz, Sobolev and Galenko [Phys. Rev. E, 76, 031606 (2007] was performed. It resulted in large differences in predicting the solidification velocity for partition-less solidification, indicating the necessity for new and more acute experimental data.

  1. On the temperature dependence of the excess resistivity in dilute volatile alloys

    International Nuclear Information System (INIS)

    Uray, L.; Vicsek, T.

    1978-01-01

    In recrystallized wires of many important refractory alloys, an appreciable part of the temperature dependence of the measured excess resistivity is related to the radial distribution of the volatile solutes (extrinsic temperature dependence). Both the extrinsic and the intrinsic part of the temperature dependence of the excess resistivity have been determined for dilute WFe, WCo and WRe alloys, by measuring the resistance as a function of temperature and the thickness of layers removed by electrothinning. In this way the parameters of the evaporation profiles were also determined. In the surface region at low temperatures the length scale of the inhomogeneity is comparable to the mean-free path. Therefore, the observed extrinsic temperature dependence of the excess resistivity was calculated directly from the Boltzmann equation. The WCo alloy is a Kondo system, since its resistivity shows a minimum a 20 K. (author)

  2. Computation of infinite dilute activity coefficients of binary liquid alloys using complex formation model

    Energy Technology Data Exchange (ETDEWEB)

    Awe, O.E., E-mail: draweoe2004@yahoo.com; Oshakuade, O.M.

    2016-04-15

    A new method for calculating Infinite Dilute Activity Coefficients (γ{sup ∞}s) of binary liquid alloys has been developed. This method is basically computing γ{sup ∞}s from experimental thermodynamic integral free energy of mixing data using Complex formation model. The new method was first used to theoretically compute the γ{sup ∞}s of 10 binary alloys whose γ{sup ∞}s have been determined by experiments. The significant agreement between the computed values and the available experimental values served as impetus for applying the new method to 22 selected binary liquid alloys whose γ{sup ∞}s are either nonexistent or incomplete. In order to verify the reliability of the computed γ{sup ∞}s of the 22 selected alloys, we recomputed the γ{sup ∞}s using three other existing methods of computing or estimating γ{sup ∞}s and then used the γ{sup ∞}s obtained from each of the four methods (the new method inclusive) to compute thermodynamic activities of components of each of the binary systems. The computed activities were compared with available experimental activities. It is observed that the results from the method being proposed, in most of the selected alloys, showed better agreement with experimental activity data. Thus, the new method is an alternative and in certain instances, more reliable approach of computing γ{sup ∞}s of binary liquid alloys.

  3. Diffuse x-ray scattering studies of defect reactions in electron-irradiated dilute nickel alloys

    International Nuclear Information System (INIS)

    Averback, R.S.; Ehrhart, P.

    1984-01-01

    Huang diffuse scattering was employed to study defect properties in dilute Ni-Si alloys. Ni alloys containing 1 at.% and 0.05 at.% Si were irradiated with electrons at 4.2 K and were subsequently isochronally annealed. It was found that, prior to annealing, the Frenkel-pair resistivities and self-interstitial atom configurations were the same in the alloys as in pure Ni. The independence of the Frenkel-pair resistivity to Si concentration indicates that the resistivities arising from Frenkel pairs and Si solute are linearly additive in Ni. After annealing through stage I to 85 K, the defect cluster size grew to 1.5, 2.3 and 3.0 interstitial atoms for the 1 at.% Si, 0.05 at.% Si and pure Ni specimens, respectively. These results demonstrate that self-interstitial atoms are not immobilised by single Si atoms in Ni, but rather complexes involving several Si atoms and/or two interstitial atoms are the stable defects at the end of annealing stage I. It was also observed that Si solute in Ni strongly suppresses the growth of interstitial clusters in stage II. In the 1 at.% Si alloys di-interstitials were immobilised up to temperatures between 200 and 300 K. There was no indication that Si solute reduced vacancy mobility in annealing stage III. The consequences of these results for the understanding of high-temperature radiation effects in alloys are discussed. (author)

  4. Study of dilute aluminum--gold alloys for superconducting stabilizer applications

    International Nuclear Information System (INIS)

    Hartwig, K.T. Jr.

    1977-01-01

    Control over a wide variation in mechanical and physical characteristics was achieved by subjecting Al--Au alloys to precipitation hardening treatments. Annealing phenomena were monitored by resistivity measurements at 273, 77, and 4.2 K and by yield strength measurements at 296, 77, and 4.2 K. Transmission electron microscopy was employed to confirm the presence of an intermetallic precipitate dispersion in aged Al--Au. Artificial aging of Al--Au results in a remarkable strength increase and a large decrease in resistivity at 4.2 K as numerous Al 2 Au precipitates form. The precipitation mechanism is independent of composition up to at least 0.2 wt % Au. Regardless of the heat treatment used to induce aging the alloy resistivity is directly proportional to gold concentration. At long aging times the residual resistivity ratio (RRR identical with rho/sub 273 K//rho sub 4.2 K/) of Al--0.2 wt % Au approaches 1000. The yield strength of Al--Au alloys at 4.2 K is shown to be directly proportional to gold concentration for aged alloy and is six to seven times greater than that of pure aluminum. The optimum strength-resistivity relationship was defined for Al--0.2 wt % Au. Thus, Al--Au seems to be comparable to other materials now used as stabilizers. Consideration was also given to the potential stabilizer use of dilute Al--Sb alloys, the prospect for use was not promising

  5. A Study of the Vacancy-Impurity Interaction in Dilute Nickel Alloys by Core Electron Annihilation

    Science.gov (United States)

    Arbuzov, V. L.; Danilov, S. E.; Druzhkov, A. P.

    1997-08-01

    It is shown that the angular correlation of annihilation radiation can be used to identify vacancy-impurity complexes in dilute alloys. Annihilation of trapped positrons with core electrons bears information about the chemical environment of a vacancy defect. The method is especially effective for d-matrices doped with sp-impurities since annihilation parameters of positrons with d- and sp-shell electrons differ considerably. The potentialities of the method of core-electron annihilation of positrons are demonstrated taking electron-irradiated dilute Ni-P and Ni-Si alloys as an example. It is shown that the interaction between the vacancies, which migrate at the III stage of annealing, and P atoms in Ni-P causes a considerable change in the annihilation parameters of positrons with core electrons compared to pure Ni. In Ni-Si alloys the annihilation parameters of trapped positrons with core electrons do not differ from those in Ni. This fact is an evidence that Si atoms do not interact with vacancies in Ni.

  6. Effect of solute segregation on thermal creep in dilute nanocyrstalline Cu alloys

    International Nuclear Information System (INIS)

    Schäfer, Jonathan; Ashkenazy, Yinon; Albe, Karsten; Averback, Robert S

    2012-01-01

    Highlights: ► Segregating solutes lower the grain boundary free volume in nanocrystalline Cu. ► Lower free volume leads to reduced atomic mobility and higher creep resistance. ► Increase in creep resistance scales with atomic size of segregating solutes. ► Atomic processes in boundaries are similar to the ones in amorphous material. - Abstract: The effect of solute segregation on thermal creep in dilute nanocrystalline alloys (Cu–Nb, Cu–Fe, Cu–Zr) was studied at elevated temperatures using molecular dynamics simulations. A combined Monte-Carlo and molecular dynamics simulation technique was first used to equilibrate the distribution of segregating solutes. Then the creep rates of the diluted Cu samples were measured as functions of temperature, composition, load and accumulated strain. In Cu–Nb samples, the creep rates were observed to increase initially with strain, but then saturate at a value close to that obtained for alloys prepared by randomly locating the solute in the grain boundaries. This behavior is attributed to an increase in grain boundary volume and energy with added chemical disorder. At high temperatures, the apparent activation energy for creep was anomalously high, 3 eV, but only 0.3 eV at lower temperatures. This temperature dependence is found to correlate with atomic mobilities in bulk Cu–Nb glasses. Calculations of creep in nanocrystalline Cu alloys containing other solutes, Fe and Zr, show that the suppression of creep rate scales with their atomic volumes when dissolved in Cu.

  7. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  8. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

    2016-01-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

  9. Quantitative determination of the solidus line in the dilute limit of succinonitrile-camphor alloys

    Science.gov (United States)

    Mota, F. L.; Fabietti, L. M.; Bergeon, N.; Strutzenberg, L. L.; Karma, A.; Billia, B.; Trivedi, R.

    2016-08-01

    Different phase diagram measurements for succinonitrile-camphor alloys to date have yielded different values of the solute partition coefficient and the freezing range of the alloy. These parameters are critical to model solidification microstructure evolution. New measurements are made to precisely characterize the dilute limit of the succinonitrile-camphor phase diagram using thin-sample directional solidification experiments where convection is negligible, so that solute transport in the melt is purely diffusive, and the temperature gradient is constant in time. These results are confirmed through complementary measurements by differential scanning calorimetry and isothermal annealing. Possible measurement uncertainties in previously measured solidus lines are discussed. Experimental results were further confirmed using a boundary layer model of transient planar interface dynamics.

  10. Analytical model of radiation-induced precipitation at the surface of dilute binary alloy

    Science.gov (United States)

    Pechenkin, V. A.; Stepanov, I. A.; Konobeev, Yu. V.

    2002-12-01

    Growth of precipitate layer at the foil surface of an undersaturated binary alloy under uniform irradiation is treated analytically. Analytical expressions for the layer growth rate, layer thickness limit and final component concentrations in the matrix are derived for coherent and incoherent precipitate-matrix interfaces. It is shown that the high temperature limit of radiation-induced precipitation is the same for both types of interfaces, whereas layer thickness limits are different. A parabolic law of the layer growth predicted for both types of interfaces is in agreement with experimental data on γ '-phase precipitation at the surface of Ni-Si dilute alloys under ion irradiation. Effect of sputtering on the precipitation rate and on the low temperature limit of precipitation under ion irradiation is discussed.

  11. Fermi surface changes in dilute magnesium alloys: a pseudopotential band structure model

    International Nuclear Information System (INIS)

    Fung, W.K.

    1976-01-01

    The de Haas-van Alphen effect has been used to study the Fermi surface of pure magnesium and its dilute alloys containing lithium and indium. The quantum oscillations in magnetization were detected by means of a torque magnetometer in magnetic field up to 36 kilogauss and temperature range of 4.2 0 to 1.7 0 K. The results provide information on the effects of lithium and indium solutes on the Fermi surface of magnesium in changes of extremal cross sections and effective masses as well as the relaxation times associated with the orbits. The nonlocal pseudopotential model proposed by Kimball, Stark and Mueller has been fitted to the Fermi surface of magnesium and extended to include the dilute alloys, fitting all the observed de Haas-van Alphen frequencies with an accuracy of better than 1 percent. A modified rigid band interpretation including both Fermi energy and local band edge changes computed from the model, gives an overall satisfactory description of the observed frequency shifts. With the pseudo-wavefunctions provided by the nonlocal model, the relaxation times in terms of Dingle temperatures for several orbits have been predicted using Sorbello's multiple-plane-wave phase shift model. The calculation with phase shifts obtained from a model potential yields a greater anisotropy than has been observed experimentally, while a two-parameter phase shift model provides a good fit to the experimental results

  12. First-principle natural band alignment of GaN / dilute-As GaNAs alloy

    Directory of Open Access Journals (Sweden)

    Chee-Keong Tan

    2015-01-01

    Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

  13. Stress relaxation in dilute Al-0.02 at.% Mn alloy under electron irradiation

    International Nuclear Information System (INIS)

    Bystrov, L.N.; Ivanov, L.I.; Pletnev, M.N.; Reznitsky, M.E.

    1984-01-01

    Stress relaxation in cold-worked and annealed (573 K for 2 hours) specimens of the dilute alloy Al-0.02 at.% Mn has been studied experimentally over a range of initial stresses 5 to 80 MPa, both with and without irradiation by 2.1 MeV electrons. Thermoactivation analysis has revealed that relaxation proceeds in two stages with different activation parameters. The deformation rate in the first stage is controlled by diffusion of the impurity (Mn), and in the second stage by the self-diffusion of aluminum. A new method has been proposed for evaluating the internal stresses from experimental data. The effect of radiation-induced diffusion on the kinetics of relaxation is discussed. (author)

  14. Morphology and substructure of lath martensites in dilute Zr--Nb alloys

    International Nuclear Information System (INIS)

    Srivastava, D.; Mukhopadhyay, P.; Banerjee, S.

    2000-01-01

    The morphology and substructure of lath martensites formed in β quenched dilute Zr--Nb alloys are described. The laths are arranged in a nearly parallel manner within any given colony or packet. Packets of alternately twin related laths and clusters of three mutually twin related lath martensite variants have been observed and the twinning plane is of {1 anti 101} H type. With increasing niobium content a continuous transition from large colonies of lath martensites, through smaller lath colonies, to individual plates of the acicular martensites occurs. The lath-lath interface consists of regularly spaced parallel arrays of dislocations of type. The habit plane traces of lath martensite lie close to {334} type poles and the operating lattice invariant shear mode is { anti 1101} H H shear system. This result is consistent with results predicted by the phenomenological theory. The preferred two and three habit plane variant grouping clustering is explained on the basis of self-accommodation effects. (orig.)

  15. Effect of Ti/Cr additive on helium diffusion and segregation in dilute vanadium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Tingting [Information Science and Technology College, Dalian Maritime University, Dalian 116026 (China); Zhang, Pengbo, E-mail: zhangpb@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian 116026 (China); Zhao, Jijun [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Zheng, Pengfei; Chen, Jiming [Southwestern Institute of Physics, Chengdu 610041 (China)

    2017-02-15

    Highlights: • He prefers to segregate to Ti region rather than Cr region in the vanadium alloys. • He diffusion barrier decreases towards Ti while it increases towards Cr. • The He{sub n}Ti complexes are more stable than the He{sub n}Cr complexes energetically. - Abstract: The effect of Ti/Cr additive on He diffusion and segregation properties in dilute vanadium alloys is investigated using first-principles calculations. First we determined the He preference site and investigated the He-Cr/He-Ti interactions. Energetically, He prefers to segregate to Ti regions rather than Cr regions. The most stable site for interstitial He is a tetrahedral site near Ti. He-Ti interactions have a weak attraction while He-Cr interactions have a weak repulsion. Kinetically, He diffusion to Ti has a lower energy barrier; contrarily the He barrier increases towards Cr. Furthermore, we discuss the stability of He{sub n}-Cr/Ti complexes and He{sub n}-vacancy-Cr and Ti complexes with n = 1–8. It is found that the He{sub n}Ti complexes are more stable than the He{sub n}Cr complexes while the He{sub n}-vacancy-Ti complexes are less favorable than He{sub n}-vacancy-Cr. The findings give a reference for understanding the mechanism of He embrittlement under irradiation.

  16. Surface tension and density of Si-Ge melts

    Science.gov (United States)

    Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

    2014-06-01

    In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.

  17. Crystal Fields in Dilute Rare-Earth Metals Obtained from Magnetization Measurements on Dilute Rare-Earth Alloys

    DEFF Research Database (Denmark)

    Touborg, P.; Høg, J.

    1974-01-01

    Crystal field parameters of Tb, Dy, and Er in Sc, Y, and Lu are summarized. These parameters are obtained from magnetization measurements on dilute single crystals, and successfully checked by a number of different methods. The crystal field parameters vary unpredictably with the rare-earth solute....... B40, B60, and B66 are similar in Y and Lu. Crystal field parameters for the pure metals Tb, Dy, and Er are estimated from the crystal fields in Y and Lu....

  18. The effects of thermal-neutron irradiation on platinum and dilute platinum-gold alloys

    International Nuclear Information System (INIS)

    Piani, C.S.B.

    1978-12-01

    The effect of varying defect concentrations on the recovery spectrum of thermal-neutron-irradiated pure platinum after isochronal anneals was investigated. The dose-independence of substages I(A), I(B) and I(C), and the dose dependence of substage I(D) and I(E), were observed to be in agreement with electron-irradiated studies. The 120 K substage in pure platinum was shown not to be due to interstitial-interstitial reactions, but could possibly be accounted for in terms of detrapping of interstitials from impurities or intrinsic immobile defects. The 360 K stage was shown to shift and was suppressed with increasing defect concentration. The possible conversion of the crowdion to a dumbbell near 160 K in Stage ll in platinum, as predicted by the two-interstitial model, was investigated by consideration of the initial slopes of the production curves between 80 K and 300 K. A minimum in these slopes was observed near 160 K and could be interpreted as due to the conversion of the highly mobile crowdion to an immobile dumbbell at this temperature. The influence of varying gold concentrations on the recovery spectrum of platinum was investigated in dilute platinum-gold alloys. The characteristics of several additional substages in Stage ll, due to the gold alloying were comparable to the results of electron-irradiation experiments. The observations made with regard to the impurity (gold) dependence of these substages could be interpreted in terms of the concentrations of the interstitials, vacancies and impurities present in the material. The interpretation of these substages was found to be consistent, if the recovery spectrum was investigated as a function of defect concentration [af

  19. What are the mesoscopic magnetic inhomogeneities in the dilute PdFeMn alloy? Polarized neutron study

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, G.; Axelrod, L.; Zabenkin, V.; Lazebnik, I.; Grigoriev, S.; Wagner, V.; Eckerlebe, H

    2003-07-01

    The 3D analysis of neutron depolarization was carried out for different thermomagnetic treatment of the dilute PdFeMn alloy versus temperature and magnetic field applied in magnetizing/demagnetizing cycles. Both the macroscopic magnetization and the mean fluctuation of local magnetization behavior were subtracted from experimental data. A complicated behavior of the latter was observed. The hysteresis of local magnetization fluctuations is found out but that of macroscopic magnetization is practically absent. The effort to apply the simple model for the description of magnetic inhomogeneities was made in order to understand the mesostructure of this alloy.

  20. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    International Nuclear Information System (INIS)

    Ullah, Hamid; Inayat, Kalsoom; Khan, S.A; Mohammad, S.; Ali, A.; Alahmed, Z.A.; Reshak, A.H.

    2015-01-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga 1−x Mn x X (X=P, As) compounds reveal that Ga 0.75 Mn 0.25 P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga 0.75 Mn 0.25 As and Ga 0.5 Mn 0.5 As and tune Ga 0.25 Mn 0.75 As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga 0.75 Mn 0.25 P, Ga 0.75 Mn 0.25 As and Ga 0.5 Mn 0.5 As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices

  1. Photoelectron spectroscopy study of Fe-diluted Au-Fe alloys

    CERN Document Server

    Nahm, T U; Choi, B; Park, J S; Oh, S J; Cho, E J

    2003-01-01

    The electronic structure of Fe-diluted Au-Fe alloys has been studied by taking core-level and valence-band spectra using x-ray photoemission spectroscopy and synchrotron radiation. From the core-level spectroscopy, we found that the Fe 2p spectrum is composed of d sup 6 and d sup 7 multiplets from Fe impurity atoms. This behaviour is qualitatively discussed within the context of electron-electron interaction. In order to explore the electron-correlation effects in the valence band, we obtained Fe 3d partial spectral weights by taking advantage of the Cooper-minimum phenomenon of an Au 5d photoionization cross section. It was found that the spin-down states have an appreciable amount of spectral weights throughout the host Au 5d band, contrary to previous one-electron calculations predicting two-peak structure of the Fe 3d states. We suggest that this discrepancy results from the correlation effect of the Fe 3d electrons.

  2. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Ullah, Hamid, E-mail: hamidullah@yahoo.com [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Inayat, Kalsoom [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Khan, S.A; Mohammad, S. [Department of Physics, Materials Modeling Laboratory, Hazara University, Mansehra 21300 (Pakistan); Ali, A. [Department of Advanced Materials Science & Engineering, Hanseo University, Seosan-si, Chungnam-do 356-706 (Korea, Republic of); Alahmed, Z.A. [Department of Physics and Astronomy, King Saud University, Riyadh 11451 (Saudi Arabia); Reshak, A.H. [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)

    2015-07-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga{sub 1−x}Mn{sub x}X (X=P, As) compounds reveal that Ga{sub 0.75}Mn{sub 0.25}P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As and tune Ga{sub 0.25}Mn{sub 0.75}As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga{sub 0.75}Mn{sub 0.25}P, Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices.

  3. Incorporating an extended dendritic growth model into the CAFE model for rapidly solidified non-dilute alloys

    International Nuclear Information System (INIS)

    Ma, Jie; Wang, Bo; Zhao, Shunli; Wu, Guangxin; Zhang, Jieyu; Yang, Zhiliang

    2016-01-01

    We have extended the dendritic growth model first proposed by Boettinger, Coriell and Trivedi (here termed EBCT) for microstructure simulations of rapidly solidified non-dilute alloys. The temperature-dependent distribution coefficient, obtained from calculations of phase equilibria, and the continuous growth model (CGM) were adopted in the present EBCT model to describe the solute trapping behaviors. The temperature dependence of the physical properties, which were not used in previous dendritic growth models, were also considered in the present EBCT model. These extensions allow the present EBCT model to be used for microstructure simulations of non-dilute alloys. The comparison of the present EBCT model with the BCT model proves that the considerations of the distribution coefficient and physical properties are necessary for microstructure simulations, especially for small particles with high undercoolings. Finally, the EBCT model was incorporated into the cellular automaton-finite element (CAFE) model to simulate microstructures of gas-atomized ASP30 high speed steel particles that were then compared with experimental results. Both the simulated and experimental results reveal that a columnar dendritic microstructure preferentially forms in small particles and an equiaxed microstructure forms otherwise. The applications of the present EBCT model provide a convenient way to predict the microstructure of non-dilute alloys. - Highlights: • A dendritic growth model was developed considering non-equilibrium distribution coefficient. • The physical properties with temperature dependence were considered in the extended model. • The extended model can be used to non-dilute alloys and the extensions are necessary in small particles. • Microstructure of ASP30 steel was investigated using the present model and verified by experiment.

  4. Incorporating an extended dendritic growth model into the CAFE model for rapidly solidified non-dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Jie; Wang, Bo [State Key Laboratory of Advanced Special Steel, Shanghai University, Shanghai 200072 (China); Shanghai Engineering Technology Research Center of Special Casting, Shanghai 201605 (China); Zhao, Shunli [Research Institute, Baoshan Iron & Steel Co., Ltd, Shanghai 201900 (China); Wu, Guangxin [State Key Laboratory of Advanced Special Steel, Shanghai University, Shanghai 200072 (China); Shanghai Engineering Technology Research Center of Special Casting, Shanghai 201605 (China); Zhang, Jieyu, E-mail: zjy6162@staff.shu.edu.cn [State Key Laboratory of Advanced Special Steel, Shanghai University, Shanghai 200072 (China); Shanghai Engineering Technology Research Center of Special Casting, Shanghai 201605 (China); Yang, Zhiliang [State Key Laboratory of Advanced Special Steel, Shanghai University, Shanghai 200072 (China); Shanghai Engineering Technology Research Center of Special Casting, Shanghai 201605 (China)

    2016-05-25

    We have extended the dendritic growth model first proposed by Boettinger, Coriell and Trivedi (here termed EBCT) for microstructure simulations of rapidly solidified non-dilute alloys. The temperature-dependent distribution coefficient, obtained from calculations of phase equilibria, and the continuous growth model (CGM) were adopted in the present EBCT model to describe the solute trapping behaviors. The temperature dependence of the physical properties, which were not used in previous dendritic growth models, were also considered in the present EBCT model. These extensions allow the present EBCT model to be used for microstructure simulations of non-dilute alloys. The comparison of the present EBCT model with the BCT model proves that the considerations of the distribution coefficient and physical properties are necessary for microstructure simulations, especially for small particles with high undercoolings. Finally, the EBCT model was incorporated into the cellular automaton-finite element (CAFE) model to simulate microstructures of gas-atomized ASP30 high speed steel particles that were then compared with experimental results. Both the simulated and experimental results reveal that a columnar dendritic microstructure preferentially forms in small particles and an equiaxed microstructure forms otherwise. The applications of the present EBCT model provide a convenient way to predict the microstructure of non-dilute alloys. - Highlights: • A dendritic growth model was developed considering non-equilibrium distribution coefficient. • The physical properties with temperature dependence were considered in the extended model. • The extended model can be used to non-dilute alloys and the extensions are necessary in small particles. • Microstructure of ASP30 steel was investigated using the present model and verified by experiment.

  5. Effects of alloying element and temperature on the stacking fault energies of dilute Ni-base superalloys.

    Science.gov (United States)

    Shang, S L; Zacherl, C L; Fang, H Z; Wang, Y; Du, Y; Liu, Z K

    2012-12-19

    A systematic study of stacking fault energy (γ(SF)) resulting from induced alias shear deformation has been performed by means of first-principles calculations for dilute Ni-base superalloys (Ni(23)X and Ni(71)X) for various alloying elements (X) as a function of temperature. Twenty-six alloying elements are considered, i.e., Al, Co, Cr, Cu, Fe, Hf, Ir, Mn, Mo, Nb, Os, Pd, Pt, Re, Rh, Ru, Sc, Si, Ta, Tc, Ti, V, W, Y, Zn, and Zr. The temperature dependence of γ(SF) is computed using the proposed quasistatic approach based on a predicted γ(SF)-volume-temperature relationship. Besides γ(SF), equilibrium volume and the normalized stacking fault energy (Γ(SF) = γ(SF)/Gb, with G the shear modulus and b the Burgers vector) are also studied as a function of temperature for the 26 alloying elements. The following conclusions are obtained: all alloying elements X studied herein decrease the γ(SF) of fcc Ni, approximately the further the alloying element X is from Ni on the periodic table, the larger the decrease of γ(SF) for the dilute Ni-X alloy, and roughly the γ(SF) of Ni-X decreases with increasing equilibrium volume. In addition, the values of γ(SF) for all Ni-X systems decrease with increasing temperature (except for Ni-Cr at higher Cr content), and the largest decrease is observed for pure Ni. Similar to the case of the shear modulus, the variation of γ(SF) for Ni-X systems due to various alloying elements is traceable from the distribution of (magnetization) charge density: the spherical distribution of charge density around a Ni atom, especially a smaller sphere, results in a lower value of γ(SF) due to the facility of redistribution of charges. Computed stacking fault energies and the related properties are in favorable accord with available experimental and theoretical data.

  6. Suppression of dilution in Ni-Cr-Si-B alloy cladding layer by controlling diode laser beam profile

    Science.gov (United States)

    Tanigawa, Daichi; Funada, Yoshinori; Abe, Nobuyuki; Tsukamoto, Masahiro; Hayashi, Yoshihiko; Yamazaki, Hiroyuki; Tatsumi, Yoshihiro; Yoneyama, Mikio

    2018-02-01

    A Ni-Cr-Si-B alloy layer was produced on a type 304 stainless steel plate by laser cladding. In order to produce cladding layer with smooth surface and low dilution, influence of laser beam profile on cladding layer was investigated. A laser beam with a constant spatial intensity at the focus spot was used to suppress droplet formation during the cladding layer formation. This line spot, formed with a focussing unit designed by our group, suppressed droplet generation. The layer formed using this line spot with a constant spatial intensity had a much smoother surface compared to a layer formed using a line spot with a Gaussian-like beam. In addition, the dilution of the former layer was much smaller. These results indicated that a line spot with a constant spatial intensity was more effective in producing a cladding layer with smooth surface and low dilution because it suppressed droplet generation.

  7. First-Principle Study of the Optical Properties of Dilute-P GaN1-xPx Alloys.

    Science.gov (United States)

    Borovac, Damir; Tan, Chee-Keong; Tansu, Nelson

    2018-04-16

    An investigation on the optical properties of dilute-P GaN 1-x P x alloys by First-Principle Density Functional Theory (DFT) methods is presented, for phosphorus (P) content varying from 0% up to 12.5%. Findings on the imaginary and real part of the dielectric function are analyzed and the results are compared with previously reported theoretical works on GaN. The complex refractive index, normal-incidence reflectivity and birefringence are presented and a difference in the refractive index in the visible regime between GaN and GaNP alloys of ~0.3 can be engineered by adding minute amounts of phosphorus, indicating strong potential for refractive index tunability. The optical properties of the GaN 1-x P x alloys indicate their strong potential for implementation in various III-nitride-based photonic waveguide applications and Distributed Bragg Reflectors (DBR).

  8. Corrosion of carbon steel and low-alloy steel in diluted seawater containing hydrazine under gamma-rays irradiation

    International Nuclear Information System (INIS)

    Nakano, Junichi; Yamamoto, Masahiro; Tsukada, Takashi

    2014-01-01

    Seawater was injected into reactor cores of Units 1, 2, and 3 in the Fukushima Daiichi nuclear power station as an urgent coolant. It is considered that the injected seawater causes corrosion of steels of the reactor pressure vessel and primary containment vessel. To investigate the effects of gamma-rays irradiation on weight loss in carbon steel and low-alloy steel, corrosion tests were performed in diluted seawater at 50°C under gamma-rays irradiation. Specimens were irradiated with dose rates of 4.4 kGy/h and 0.2 kGy/h. To evaluate the effects of hydrazine (N 2 H 4 ) on the reduction of oxygen and hydrogen peroxide, N 2 H 4 was added to the diluted seawater. In the diluted seawater without N 2 H 4 , weight loss in the steels irradiated with 0.2 kGy/h was similar to that in the unirradiated steels, and weight loss in the steels irradiated with 4.4 kGy/h increased to approximate 1.7 times of those in the unirradiated steels. Weight loss in the steels irradiated in the diluted seawater containing N 2 H 4 was similar to that in the diluted seawater without N 2 H 4 . When N 2 was introduced into the gas phase in the flasks during gamma-rays irradiation, weight loss in the steels decreased. (author)

  9. Electrochemical and corrosion behavior of a 304 stainless-steel-based metal alloy wasteform in dilute aqueous environments

    International Nuclear Information System (INIS)

    Chen, Jian; Asmussen, R. Matthew; Zagidulin, Dmitrij; Noël, James J.; Shoesmith, David W.

    2013-01-01

    Highlights: ► We investigated the corrosion behavior of a metal alloy in six reference solutions. ► Majority of rhenium used as a technetium surrogate contained within a Fe 2 Mo phase. ► This prototype alloy exhibited generally passive behavior in all environments. ► Passivity breakdown events can occur and lead to localized corrosion. - Abstract: The electrochemical and corrosion behavior of a stainless-steel-based alloy made as a prototype metallic nuclear wasteform to immobilize 99 Tc, has been studied in a number of reference solutions ranging in pH from 4 to 10. The results showed the 47SS(304)-9Zr–23Mo prototype alloy contained at least five distinct phases with the majority of the Re, used as a Tc surrogate, contained within a Fe 2 Mo intermetallic phase. Polarization studies showed this alloy exhibited generally passive behavior in a range of dilute aqueous environments. Impedance measurements indicated passivity breakdown events can occur and lead to localized corrosion, especially in slightly alkaline conditions.

  10. Structure of the liquid-vapor interface of a dilute ternary alloy: Pb and In in Ga

    International Nuclear Information System (INIS)

    Yang Bin; Li Dongxu; Rice, Stuart A.

    2003-01-01

    We report the results of experimental studies of how the competition between two solutes to segregate in the liquid-vapor interface of a dilute ternary alloy influences the composition and structure of that interface. The system studied has small amounts of Pb and In dissolved in Ga; it differs from a previous study of dilute alloys containing small amounts of Pb and Sn dissolved in Ga by the addition of a new variable, namely, the valence difference between the solute atoms Pb and In. This valence difference influences the electron density distribution in the alloy liquid-vapor interface in proportion to the excess concentrations of the solute species in the interface, and thereby should affect the structure of the interface. We find that for a ternary PbInGa alloy that contains 0.039 at. % Pb and 6.31 at. % In, the Pb that segregates in the liquid-vapor interface forms a two-dimensional hexagonal crystal phase that undergoes a first-order transition to a disordered phase at T=29.0±0.1 deg. C. The two-dimensional crystalline Pb forms about 0.6 of a full monolayer; the remainder of the outer stratum of the liquid-vapor interface is filled with two-dimensional liquid In. For a ternary PbInGa alloy that contains the same amount of Pb and 12.2 at. % In, the Pb that segregates in the liquid-vapor interface forms a two-dimensional liquid down to 26.0 deg. C, the lowest temperature at which data were taken. For temperatures in excess of 29.0 deg. C two-dimensional liquid Pb and two-dimensional liquid In coexist in the interface, with the fractional occupation of the monolayer by In exceeding the fractional occupation by Pb

  11. A theory for the anisotropic interaction between two substitutional magnetic impurities and the magnetic anisotropic effect in dilute magnetic alloys

    International Nuclear Information System (INIS)

    Satter, M.A.

    1990-08-01

    In this paper, a formalism for studying the anisotropic interaction between two substitutional magnetic impurities and the magnetic anisotropic effect in a dilute noble metal- transition metal magnetic alloy has been developed from relativistic scattering theory. The theoretical development and the computational techniques of this formalism are based on relativistic spin-polarized scattering theory and relativistic band structure frameworks. For studying the magnetic anisotropic effect a convenient ''working'' frame of reference with its axes oriented along the fcc crystal axes is set up. This formalism is applied to study the situation for two Fe impurities in paramagnetic Au hosts. For AuFe dilute alloy, the two impurity site interaction as a function of separation is not oscillatory and the anisotropic effect is found to be less than the two site interaction itself only by an order of magnitude. Apart from the anisotropic coupling of the two impurity spins to the separation vector, for the first time, another weak anisotropic coupling to the crystal axes is also contained in the two site interaction. These anisotropic effects are the results of the relativistic spin-orbit interaction which are incorporated into the formalism. (author). 22 refs, 5 figs

  12. Multifold Seebeck increase in RuO2 films by quantum-guided lanthanide dilute alloying

    International Nuclear Information System (INIS)

    Music, Denis; Basse, Felix H.-U.; Schneider, Jochen M.; Han, Liang; Borca-Tasciuc, Theo; Devender; Gengler, Jamie J.; Voevodin, Andrey A.; Ramanath, Ganpati

    2014-01-01

    Ab initio predictions indicating that alloying RuO 2 with La, Eu, or Lu can increase the Seebeck coefficient α manifold due to quantum confinement effects are validated in sputter-deposited La-alloyed RuO 2 films showing fourfold α increase. Combinatorial screening reveals that α enhancement correlates with La-induced lattice distortion, which also decreases the thermal conductivity twentyfold, conducive for high thermoelectric figures of merit. These insights should facilitate the rational design of high efficiency oxide-based thermoelectrics through quantum-guided alloying

  13. The effect of surface depletion on the work function of arc-melted dilute solution tungsten-iridium alloys

    International Nuclear Information System (INIS)

    D'Cruz, L.A.; Bosch, D.R.; Jacobson, D.L.

    1991-01-01

    The requirements of thermionic electrode materials have emphasized the need for substantial improvements in microstructural stability, strength, and creep resistance at service temperature in excess of 2,500K. The present work extends an earlier study of the effective work function trends of a series of dilute solution tungsten, iridium alloys with iridium contents of 1, 3, and 5 wt%. Since the lifetime of candidate electrode materials is an important consideration, the present work attempts to evaluate the repeatability of the work function trends in these alloys. The effective work function was obtained from measurements of the current emitted from the electrode surface under UHV conditions in the temperature range of 1,800-2,500K using a Vacuum Emission Vehicle (VEV). The data generated in this work have been compared with data obtained in earlier studies performed on these alloys. It was found that the magnitude of the effective work function of these alloys was affected by changes in the subsurface iridium concentration. Furthermore, these alloys exhibited a dependence of the work function on temperature, after prolonged exposure to elevated temperatures. Such a temperature dependence can be explained by diffusion-controlled changes in the coverage of an iridium monolayer on the surface. It is proposed that the significant difference in effective work function trends obtained after prolonged exposure to elevated temperatures is a direct consequence of changes in the coverage of an iridium-rich monolayer on the electrode surface. The constitution of such a surface layer, however, would be governed by composition changes in the subsurface regions of the electrode caused thermally-activated transport processes

  14. Hyperfine interactions in dilute Se doped Fe{sub x}Sb{sub 1−x} bulk alloy

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Mitesh, E-mail: miteshsarkar-msu@yahoo.com; Agrawal, Naveen [The M. S. University of Baroda, Department of Physics (India); Chawda, Mukesh [Polytechnic, The M. S. University of Baroda, Department of Applied Physics (India)

    2016-12-15

    Hyperfine Interaction technique like Moessbauer spectroscopy is a very sensitive tool to study the local probe interactions in Iron doped alloys and compounds. We report here the Moessbauer study of the effect of Fe concentration variations in dilute magnetic semiconducting Se{sub 0.004}Fe{sub x}Sb{sub 1−x} alloys for x = 0.002, 0.004 and 0.008. The materials were characterized using X-ray diffraction technique (XRD), Fourier Transform Infra-red spectroscopy (FTIR), Neutron depolarization and Moessbauer spectroscopy. The FTIR result shows the semiconducting behavior of the alloys with band gap of 0.18 eV. From Moessbauer spectroscopy two magnetic sites (A and B) were observed. The value of hyperfine magnetic fields (HMF) of ∼ 308 kOe (site A) and 270 kOe (site B) was constant with increase in Fe concentration. A nonmagnetic interaction was also observed with quadrupole splitting (QS) of 1.26 mm/sec (site C) for x = 0.004 and x = 0.008. The Neutron depolarization studies indicate that the clusters of Fe or Fe based compounds having net magnetic moments with a size greater than 100 Å is absent.

  15. Moessbauer effect studies of magnetic interactions in iron and dilute iron alloys

    International Nuclear Information System (INIS)

    Woude, F. van der; Schurer, P.J.; Sawatzky, G.A.

    1975-01-01

    A temperature-dependent Moessbauer study was conducted in FeX alloys, where X = Al, Si, Ti, V, Cr, Mn, Co, and Ni, aimed at solving the problem of 'what is localized and what is itinerant in iron ferromagnetism'. The experimental results are interpreted using a phenomenological model based on a modified Zener-Vonsovskij theory. Absorption spectra of FeX alloys were measured as a function of temperature. It was found that the 3d magnetic moments in iron were mainly localized while exchange coupling was provided by partly itinerant 3d electrons. (L.D.)

  16. Evidence of zirconium nano-agglomeration in as-cast dilute U–Zr alloys

    International Nuclear Information System (INIS)

    Mukherjee, S.; Kaity, S.; Saify, M.T.; Jha, S.K.; Pujari, P.K.

    2014-01-01

    Microstructure evaluation of as-cast and annealed U–Zr (Zr = 2, 6 and 10 wt.%) alloys has been carried out for the first time using positrons as a probe. The chemical signature in the matter–antimatter annihilation gamma and the positron lifetime data suggests that majority of positrons are annihilating from Zr sites in the as-cast alloys. The results have been interpreted as due to the presence of Zr nano-agglomerates in the as-cast alloys which have a higher positron affinity as compared to the rest of the U matrix. A minimum agglomerate size of ∼2 nm diameter has been calculated from the difference in positron affinity between the agglomerates and the matrix. Upon annealing, the Zr signature in the annihilation gamma photons vanishes suggesting that the Zr agglomerates diffuse out of U matrix and form micron-sized precipitates. This has been confirmed by scanning electron microscopy which shows a 3 times increase in the surface density of the precipitates in the annealed alloys as compared to the as-cast ones. Shorter positron diffusion length (measured using slow positron beam) as compared to precipitate separation has been invoked to explain the observed data

  17. Sc-45 nuclear magnetic resonance analysis of precipitation in dilute Al-Sc alloys

    NARCIS (Netherlands)

    Celotto, S; Bastow, TJ

    Nuclear magnetic resonance (NMR) with Sc-45 is used to determine the solid solubility of scandium in aluminium and to follow the precipitation of Al3Sc during the ageing of an Al-0.06 at.% Sc alloy via the two fully resolved peaks, corresponding to Sc in the solid solution Al matrix and to Sc in the

  18. Ruderman--Kittel--Kasuya--Yosida interaction in amorphous La80Au20 alloys with dilute Gd impurities

    International Nuclear Information System (INIS)

    Poon, S.J.; Durand, J.

    1976-09-01

    From magnetization measurements on some amorphous dilute La/sub 79-x/Gd/sub x/Au 20 alloys with x less than or equal to 1, it is shown that the magnetic behavior follows the scaling laws of a spin-glass system, characteristic of the 1/r 3 dependence of the pairwise interaction. The strength of the Ruderman-Kittel-Kasuya-Yosida interaction, V(r) = (V/sub o/cos 2k/sub F/r)/r 3 , was determined to be V/sub o/ = 0.20 x 10 -37 erg cm 3 . The corresponding value of the s-f exchange integral is vertical bar J/sub sf/ vertical bar = 0.14 eV, which is compared with values determined from other experiments. 4 figures, 1 table

  19. Investigation of the magnetic aftereffect in dilute Fe-Ni alloys after low-temperature neutron irradiation

    International Nuclear Information System (INIS)

    Blythe, H.J.; Walz, F.; Kronmueller, H.

    1982-01-01

    Dilute Fe alloys containing up to 0.5 at% Ni, neutron-irradiated at 77 K, exhibit a very complicated relaxation spectrum during anneal in the temperature range 30 to 350 K. This behaviour, in which individual peaks transform from one into another, is investigated in detail. All maxima occurring in the temperature range 30 to 140 K are found to be of Debye-type with relaxation times obeying an Arrhenius equation tau = tau 0 exp (Q/kT). The major processes of these spectra are computer-analysed in order to determine their activation parameters Q and tau 0 . The complicated peak genealogy, as observed on anneal, is attributed to the presence of two configurations of reorientating Fe interstitial atoms which form small clusters together with substitutionally and interstitially dissolved Ni atoms. (author)

  20. Trapping of self-interstitials at manganese atoms in electron-irradiated dilute AlMn alloys

    International Nuclear Information System (INIS)

    Bartels, A.; Dworschak, F.

    1985-01-01

    Dilute AlMn alloys were irradiated isothermally at different temperatures in stage II with 1.8 MeV electrons and the resistivity damage rates were measured as a function of the residual resistivity increase. The results demonstrate that Mn atoms provide deep traps at least up to 150 K for mobile interstitials. A quantitative evaluation of the data with respect to trapping radii is somewhat handicapped by the fact that the resistivity contribution of a Mn-Al interstitial complex was found to be considerably less than the sum of the resistivity contributions of an isolated solute Mn atom and an Al self-interstitial. The results can be explained by a model which assumes that both the trapping radius and the resistivity contribution of solute-self-interstitial complexes increase with the number of trapped interstitials. (author)

  1. Plain defects and their vortex configuration in dilute Mo-B alloys in dissipative structure

    International Nuclear Information System (INIS)

    Sofronova, R.M.

    1992-01-01

    Electron microscopic study of single crystal of Mo-0.003 mas.% B alloy after zone melting and annealing at 2373 K was conducted to reveal the nature of planar defects and the role of boron in their formation. It was shown that planar defects should be considered as preprecipitations of MoB nonequilibrous phase out of molybdenum base solid solution. A planar defect was found to constitute a monolayer of boron atoms which consisted of B-B zigzag-like chains. Inturn the chains were surrounded by Mo atoms which formed hexagonal prism. The coherency of planar defects with matrix was due to close lattice parameters of Mo, β-MoB and δ-MoB. The planar defects in molybdenum base alloy were considered as elements of dissipative structure. They determined formation of supercellular dislocation structure under deformation

  2. Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

    Energy Technology Data Exchange (ETDEWEB)

    Cornet, C.; Nguyen Thanh, T.; Almosni, S.; Rohel, T.; Kuyyalil, J.; Rambaud, A.; Letoublon, A.; Bertru, N.; Durand, O.; Le Corre, A. [Universite Europeenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 avenue des Buttes de Coeesmes, 35708 Rennes (France); Quinci, T. [Universite Europeenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 avenue des Buttes de Coeesmes, 35708 Rennes (France); CEA LCP, INES, Savoie Technolac, 73375 Le Bourget du Lac (France)

    2012-12-17

    We have investigated the influence of the surface roughness on nitrogen incorporation during the molecular beam epitaxy of diluted nitrides, independently of the other growth parameters. GaPN/GaP layers grown simultaneously on surfaces displaying different roughnesses reveal a large difference in nitrogen incorporation despite the same growth temperature and growth rate. The same difference is found on quasi-lattice-matched GaAsPN demonstrating that the phenomenon is not related to any strain-induced mechanisms. The tendency is clearly confirmed when varying the growth conditions. As a direct consequence, the incorporation of substitutional nitrogen near the atomic step edges is found to be 6.7 times more probable than the in-plane nitrogen incorporation. The formation of N-N{sub i} clusters and their stability on the surface is discussed.

  3. The Generation of AlmFe in Dilute Aluminium Alloys with Different Grain Refining Additions

    Science.gov (United States)

    Meredith, M. W.; Greer, A. L.; Evans, P. V.; Hamerton, R. G.

    Al13Fe4, Al6Fe and AlmFe are common intermetallics in commercial AA1XXX series Al alloys. Grain-refining additions (based on either Al-Ti-B or Al-Ti-C) are usually added to such alloys during solidification processing to aid the grain structure development. They also influence the favoured intermetallic and, hence, can affect the materials' properties. This work simulates commercial casting practices in an attempt to determine the mechanisms by which one intermetallic phase is favoured over another by the introduction of grain-refining additions. Directional solidification experiments on Al-0.3wt.%Fe-0.15wt.%Si with and without grain refiner are conducted using Bridgman apparatus. The type, amount and effectiveness of the grain-refining additions are altered and the resulting intermetallic phase selection followed. The materials are characterised using optical microscopy, scanning electron microscopy and X-ray diffraction. AlmFe is seen to form when Al-Ti-B grain-refiner is introduced but only when the refinement is successful; reducing the effectiveness of the refiner led to Al6Fe forming under all conditions. Al-Ti-C refiners are seen to promote AlmFe at lower solidification velocities than when Al-Ti-B was used even though the grain structure was not as refined. These trends can be explained within existing eutectic theory, by considering growth undercooling.

  4. First-principles calculations of impurity diffusion coefficients in dilute Mg alloys using the 8-frequency model

    International Nuclear Information System (INIS)

    Ganeshan, S.; Hector, L.G.; Liu, Z.-K.

    2011-01-01

    Research highlights: → Implemented the eight frequency model for impurity diffusion in hexagonal metals. → Model inputs were energetics/vibrational properties from first princples. → Predicted diffusion coefficients for Al, Ca, Zn and Sn impurity diffusion in Mg. → Successful prediction of partial correlation factors and jump frequencies. → Good agreement between calculated and experimental results. - Abstract: Diffusion in dilute Mg-X alloys, where X denotes Al, Zn, Sn and Ca impurities, was investigated with first-principles density functional theory in the local density approximation. Impurity diffusion coefficients were computed as a function of temperature using the 8-frequency model which provided the relevant impurity and solvent (Mg) jump frequencies and correlation factors. Minimum energy pathways for impurity diffusion and associated saddle point structures were computed with the climbing image nudged elastic band method. Vibrational properties were obtained with the supercell (direct) method for lattice dynamics. Calculated diffusion coefficients were compared with available experimental data. For diffusion between basal planes, we find D Mg-Ca > D Mg-Zn > D Mg-Sn > D Mg-Al, where D is the diffusion coefficient. For diffusion within a basal plane, the same trend holds except that D Mg-Zn overlaps with D Mg-Al at high temperatures and D Mg-Sn at low temperatures. These trends were explored with charge density contours in selected planes of each Mg-X alloy, the variation of the activation energy for diffusion with the atomic radius of each impurity and the electronic density of states. The theoretical methodology developed herein can be applied to impurity diffusion in other hexagonal materials.

  5. Atomic kinetic Monte Carlo model based on ab initio data: Simulation of microstructural evolution under irradiation of dilute Fe-CuNiMnSi alloys

    International Nuclear Information System (INIS)

    Vincent, E.; Becquart, C.S.; Domain, C.

    2007-01-01

    The embrittlement of pressure vessel steels under radiation has been long ago correlated with the presence of Cu solutes. Other solutes such as Ni, Mn and Si are now suspected to contribute also to the embrittlement. The interactions of these solutes with radiation induced point defects thus need to be characterized properly in order to understand the elementary mechanisms behind the formation of the clusters formed upon radiation. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects with solute atoms in dilute FeX alloys (X = Cu, Mn, Ni or Si) in order to build a database used to parameterise an atomic kinetic Monte Carlo model. Some results of irradiation damage in dilute Fe-CuNiMnSi alloys obtained with this model are presented

  6. Atomic kinetic Monte Carlo model based on ab initio data: Simulation of microstructural evolution under irradiation of dilute Fe CuNiMnSi alloys

    Science.gov (United States)

    Vincent, E.; Becquart, C. S.; Domain, C.

    2007-02-01

    The embrittlement of pressure vessel steels under radiation has been long ago correlated with the presence of Cu solutes. Other solutes such as Ni, Mn and Si are now suspected to contribute also to the embrittlement. The interactions of these solutes with radiation induced point defects thus need to be characterized properly in order to understand the elementary mechanisms behind the formation of the clusters formed upon radiation. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects with solute atoms in dilute FeX alloys (X = Cu, Mn, Ni or Si) in order to build a database used to parameterise an atomic kinetic Monte Carlo model. Some results of irradiation damage in dilute Fe-CuNiMnSi alloys obtained with this model are presented.

  7. Diffuse scattering from the liquid-vapor interfaces of dilute Bi:Ga, Tl:Ga, and Pb:Ga alloys

    International Nuclear Information System (INIS)

    Li Dongxu; Jiang Xu; Rice, Stuart A.; Lin Binhua; Meron, Mati

    2005-01-01

    As part of a study of the in-plane wave-vector (q xy ) dependence of the effective Hamiltonian for the liquid-vapor interface, H(q), the wave-vector dependences of diffuse x-ray scattering from the liquid-vapor interfaces of dilute alloys of Bi in Ga, Tl in Ga, and Pb in Ga have been measured. In these dilute alloys the solute component segregates as a monolayer that forms the outermost stratum of the liquid-vapor interfaces, and the density distribution along the normal to the interface is stratified. Over the temperature ranges that the alloy interfaces were studied, the Tl and Pb monolayers exhibit both crystalline and liquid phases while the Bi monolayer is always liquid. The diffuse scattering from the liquid-vapor interfaces of these alloys displays interesting differences with that from the liquid-vapor interface of pure Ga. The presence of a segregated monolayer of solute in the liquid-vapor interface of the alloy appears to slightly suppress the fluctuations in an intermediate wave-vector range in a fashion that preserves the validity of the macroscopic capillary wave model to smaller wavelengths than in pure liquid Ga, and there is an increase in diffuse scattering when the Tl and Pb monolayers melt. The surface intrinsic roughness from fitting the wave-vector dependence of surface tension is 5.0 pm for the Tl:Ga alloy and 1.4 pm for the Bi:Ga alloy. Also, a mode of excitation that contributes to diffuse scattering from the liquid-vapor interface of Pb in Ga, but does not contribute to diffuse scattering from the liquid-vapor interface of Ga, has been identified. It is proposed that this mode corresponds to the separation of the Pb and Ga layers in the regime 1 nm -1 ≤q xy ≤10 nm -1

  8. Step-driven surface segregation and ordering during Si-Ge MBE growth

    International Nuclear Information System (INIS)

    Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

    1992-06-01

    An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth

  9. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  10. Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

    International Nuclear Information System (INIS)

    Usman, Muhammad; Broderick, Christopher A.; O'Reilly, Eoin P.

    2013-01-01

    The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBi x As 1−x alloys results in a large reduction of the band gap energy (E g ) accompanied by a significant increase of the spin-orbit-splitting energy (Δ SO ), leading to an E g SO regime for x ∼ 10% which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBi x N y As 1−x−y offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp 3 s* tight binding and 14-band k⋅p models for the study of the electronic structure of GaBi x As 1−x and GaBi x N y As 1−x−y alloys. Our results are in good agreement with the available experimental data

  11. Diffusion-induced quadrupole relaxation of 27Al nuclei in dilute Al-Ti, Al-Cr, Al-Mn, and Al-Cu alloys at high temperatures

    International Nuclear Information System (INIS)

    Bottyan, L.; Beke, D.L.; Tompa, K.

    1983-01-01

    The temperature dependence of the laboratory frame spin-lattice relaxation time of 27 Al nuclei is measured in 5N Al and in dilute Al-Ti, Al-Cr, Al-Mn, and Al-Cu alloys at 5.7 and 9.7 MHz resonance frequencies. The relaxation in pure aluminium is found to be purely due to the conduction electrons. An excess T 1 -relaxation contribution is detected in all Al-3d alloys investigated above 670 K. The excess relaxation rate is proportional to the impurity content and the temperature dependence of the excess contribution is of Arrhenius-type with an activation energy of (1.3 +- 0.3) eV for all of the investigated alloys. The relaxation contribution is found to be quadrupolar in origin and is caused by the relative diffusional jumps of solute atoms and Al atoms relatively far from the impurity. (author)

  12. The Effect of Dilution on Microsegregation in AWS ER NiCrMo-14 Alloy Welding Claddings

    Science.gov (United States)

    Miná, Émerson Mendonça; da Silva, Yuri Cruz; Dille, Jean; Silva, Cleiton Carvalho

    2016-12-01

    Dilution and microsegregation are phenomena inherent to claddings, which, in turn, directly affect their main properties. This study evaluated microsegregation in the fusion zone with different dilution levels. The overlays were welded by the TIG cold wire feed process. Dilution was calculated from the geometric characteristics of the claddings and from the conservation of mass equation using chemical composition measurements. Microsegregation was calculated using energy dispersive X-ray spectroscopy measurements of the dendrites and the chemical composition of the fusion zone. The dilution of the claddings was increased by reducing the wire feed rate. Fe showed potential to be incorporated into the solid phase ( k > 1), and this increased with the increase of dilution. Mo, in turn, was segregated into the liquid phase ( k < 1) and also increased with the increase of dilution. However, Cr and W showed a slight decrease in their partition coefficients ( k) with the increase of dilution.

  13. Simulation of the microstructural evolution under irradiation of dilute Fe-CuNiMnSi alloys by atomic kinetic monte Carlo model based on ab initio data

    International Nuclear Information System (INIS)

    Vincent, E.; Domain, C.; Vincent, E.; Becquart, C.S.

    2008-01-01

    Full text of publication follows. The embrittlement and the hardening of pressure vessel steels under radiation has been correlated with the presence solutes such as Cu, Ni, Mn and Si. Indeed it has been observed that under irradiation, these solutes tend to gather to form more or less dilute clusters. The interactions of these solutes with radiation induced point defects thus need to be characterised properly in order to understand the elementary mechanisms behind the formation of these clusters. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects (vacancies as well as interstitials) with solute atoms in dilute FeX alloys (X Cu, Mn, Ni or Si) in order to build a database used to parameterize an atomic kinetic Monte Carlo model. The model has been applied to simulate thermal ageing as well as irradiation conditions in dilute Fe-CuNiMnSi alloys. Results obtained with this model will be presented. (authors)

  14. Mechanical and electrical evaluation of a dilute aluminium alloy heat treated for application in electrical cables and wires; Avaliacao mecanica e eletrica de uma liga diluida de aluminio tratada termicamente para aplicacao em fios e cabos eletricos

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, E.S. [Faculdade de Engenharia Mecanica - Unicamp - Campinas, SP (Brazil)], e-mail: manu@fem.unicamp.br; Kamizono, K.A.; Nogueira, P.; Nogueira, A.T.; Quaresma, Jose Maria do Vale [Universidade Federal do Para - UFPA, PA (Brazil)

    2010-07-01

    With the need to investigate new materials developed and presented to the market of non-ferrous materials and in particular those developed for the transmission and distribution of electricity, we conducted a study on a dilute alloy Al-EC-0, 7% Si, where from his previous characterization and thus knowing their good mechanical and electrical properties, we developed a new aluminum alloy in an attempt to know the properties of the alloy Al-EC-0, 7% Si in the presence of alloying elements, titanium. Being the new alloy under different thermal treatment temperature in order to observe their behavior under such mechanical and electrical conditions. (author)

  15. Nicotinic acid as a nontoxic corrosion inhibitor for hot dipped Zn and Zn-Al alloy coatings on steels in diluted hydrochloric acid

    Energy Technology Data Exchange (ETDEWEB)

    Ju Hong [Institute of Oceanology, Chinese Academy of Sciences, Qingdao 266071 (China); Graduate School, Chinese Academy of Sciences, Beijing 100039 (China); Li Yan [Institute of Oceanology, Chinese Academy of Sciences, Qingdao 266071 (China)], E-mail: yanlee@ms.qdio.ac.cn

    2007-11-15

    The inhibition effect of nicotinic acid for corrosion of hot dipped Zn and Zn-Al alloy coatings in diluted hydrochloric acid was investigated using quantum chemistry analysis, weight loss test, electrochemical measurement, and scanning electronic microscope (SEM) analysis. Quantum chemistry calculation results showed that nicotinic acid possessed planar structure with a number of active centers, and the populations of the Mulliken charge, the highest occupied molecular orbital (HOMO), and the lowest unoccupied molecular orbital (LUMO) were found mainly focused around oxygen and nitrogen atoms, and the cyclic of the benzene as well. The results of weight loss test and electrochemical measurement indicated that inhibition efficiency (IE%) increased with inhibitor concentration, and the highest inhibition efficiency was up to 96.7%. The corrosion inhibition of these coatings was discussed in terms of blocking the electrode reaction by adsorption of the molecules at the active centers on the electrode surface. It was found that the adsorption of nicotinic acid on coating surface followed Langmuir adsorption isotherm with single molecular layer, and nicotinic acid adsorbed on the coating surface probably by chemisorption. Nicotinic acid, therefore, can act as a good nontoxic corrosion inhibitor for hot dipped Zn and Zn-Al alloy coatings in diluted hydrochloric acid solution.

  16. Formation and stability of Fe-rich precipitates in dilute Zr(Fe) single-crystal alloys

    International Nuclear Information System (INIS)

    Zou, H.; Hood, G.M.; Roy, J.A.; Schultz, R.J.

    1993-02-01

    The formation and stability of Fe-rich precipitates in two α-Zr(Fe) single-crystal alloys with nominal compositions (I, 50 ppma Fe, and II, 650 ppma Fe) have been investigated (the maximum solid solubility of Fe in α-Zr is 180 ppma - 800 C). Optical microscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been used to examine the characteristics of Fe-rich precipitates. SEM and TEM micrographs show that in as-grown alloy II, Zr 2 Fe precipitates are located at 'stringers'. Precipitates were not observed in as-grown alloy I. During annealing, below the solvus, Fe diffuses to the surfaces to form Zr 3 Fe precipitates in both alloys. The precipitates on the surfaces of alloy I tend to be star-like (0001) or pyramidal (1010), and their distribution is heterogeneous. Dissolution of Zr 3 Fe surface precipitates of alloy I (annealing above the solvus) leaves precipitate-like features on the surfaces. Zr 2 Fe precipitates in as-grown alloy II can be dissolved only by β-phase annealing. (Author) 8 figs., 18 refs

  17. Multifold Seebeck increase in RuO{sub 2} films by quantum-guided lanthanide dilute alloying

    Energy Technology Data Exchange (ETDEWEB)

    Music, Denis, E-mail: music@mch.rwth-aachen.de; Basse, Felix H.-U.; Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Han, Liang; Borca-Tasciuc, Theo [Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States); Devender [Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States); Gengler, Jamie J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, Ohio 45433 (United States); Spectral Energies, LLC, Dayton, Ohio 45431 (United States); Voevodin, Andrey A. [Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, Ohio 45433 (United States); Ramanath, Ganpati [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States)

    2014-02-03

    Ab initio predictions indicating that alloying RuO{sub 2} with La, Eu, or Lu can increase the Seebeck coefficient α manifold due to quantum confinement effects are validated in sputter-deposited La-alloyed RuO{sub 2} films showing fourfold α increase. Combinatorial screening reveals that α enhancement correlates with La-induced lattice distortion, which also decreases the thermal conductivity twentyfold, conducive for high thermoelectric figures of merit. These insights should facilitate the rational design of high efficiency oxide-based thermoelectrics through quantum-guided alloying.

  18. EIS pitting temperature determination of A182 nickel based alloy in simulated BWR environment containing dilute seawater

    International Nuclear Information System (INIS)

    Lavigne, Olivier; Shoji, Tetsuo; Takeda, Yoichi

    2014-01-01

    Graphical abstract: - Highlights: • Stable pitting events in function of the temperature are monitored by electrochemical impedance spectroscopy. • The pitting temperature for the nickel based alloy A182 in solution containing 450 ppm Cl − is defined as above 160 °C. • The presented method can be applied for others passive alloys as stainless steel in solution containing aggressive anions. - Abstract: A method based on electrochemical impedance spectroscopy (EIS) measurements to monitor the pitting temperature of passive alloys in a given media is developed in this communication. The pitting corrosion behavior of the nickel based alloy 182 in water containing 450 ppm by weight of chloride is presented in this study. The analysis of the EIS fit parameters from the proposed equivalent electrical circuit allows to determine the temperature from which stable pitting event occurs at open circuit potential. For the A182 sample this temperature is measured above 160 °C

  19. The role of iridium in the work-function behavior of dilute-solution tungsten, iridium alloys

    International Nuclear Information System (INIS)

    D'Cruz, L.A.

    1991-01-01

    Requirements of thermionic electrode materials have emphasized the need for substantial improvements in microstructural stability, strength and creep resistance at service temperatures in excess of 2,500K. This study utilized both chemical alloying and mechanical alloying procedures for the addition of iridium to submicron W powder followed by cold compaction and sintering. The shrinkage characteristics and microstructural development were studied in iridium-added tungsten compacts with a range of additive levels. An electron-emission study was subsequently carried out in order to evaluate the work-function behavior of the consolidated alloys. The work function was obtained from current-emission measurements from the electrode surface under UHV conditions in the temperature range of 1,800 to 2,500K using a Vacuum Emission Vehicle (VEV). The data show that the magnitude of the work function in these alloys varied with temperature and was sensitive to sub-surface iridium content

  20. Origin of the suppression in low frequency terahertz conductivity in dilute GaAs nitride and bismide alloys

    DEFF Research Database (Denmark)

    Cocker, Tylor; Lu, Xianfeng; Cooke, David

    We have performed time-resolved terahertz spectroscopy on GaAs1-xBix (x=7%) and observed a low-frequency suppression of the real conductivity previously seen only in dilute GaAs nitrides. We have developed a modified Drude model with a frequency-dependent scattering time that provides excellent...

  1. Local magnetic moments in dilute Cr-Nb alloys: the effects of applied magnetic field and Nb concentration

    International Nuclear Information System (INIS)

    Souza, P E N de; Oliveira, L M de; Ortiz, W A; Camargo, P C de; Oliveira, A J A de

    2005-01-01

    In this work we present magnetic susceptibility results for Cr-x at.% Nb alloys (x = 0.2, 0.6, 0.7, 1.4, and 2.0), showing that a local short-range order spin-density wave (L-SDW) appears at a characteristic temperature (T loc ) above the Neel temperature. The evidence for L-SDW is based on a Curie-Weiss-like behaviour, which is suppressed when large magnetic fields are applied or for alloys with Nb concentration above x = 2.0 at.%

  2. Segregation across the metal/oxide interface occurring during oxidation at high temperatures of diluted iron based alloys

    International Nuclear Information System (INIS)

    Geneve, D.; Rouxel, D.; Weber, B.; Confente, M.

    2006-01-01

    Industrial steels being elaborated in air at high temperature oxidize and cover with a complex oxide layer. The oxidation reaction drastically alters the surface composition. Such modifications have been investigated, in this work, by Auger Electron Spectroscopy (AES) using an original method to characterize the composition of the metal/oxide interfaces. Analysis of the concentration gradients across the interfaces allows to better understand how the alloy elements contribute to the oxidation process. The development of new alloy phases, the interdependencies between elements and the diffusion of different species are discussed considering thermodynamic properties of each element

  3. Nickel recovery from electronic waste II Electrodeposition of Ni and Ni–Fe alloys from diluted sulfate solutions

    Energy Technology Data Exchange (ETDEWEB)

    Robotin, B. [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania); Ispas, A. [Fachgebiet Elektrochemie und Galvanotechnik II, Technische Universität Ilmenau, D-98693 Ilmenau (Germany); Coman, V. [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania); Bund, A. [Fachgebiet Elektrochemie und Galvanotechnik II, Technische Universität Ilmenau, D-98693 Ilmenau (Germany); Ilea, P., E-mail: pilea@chem.ubbcluj.ro [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania)

    2013-11-15

    Highlights: • Ni can be recovered from EG wastes as pure Ni or as Ni–Fe alloys. • The control of the experimental conditions gives a certain alloy composition. • Unusual deposits morphology shows different nucleation mechanisms for Ni vs Fe. • The nucleation mechanism was progressive for Ni and instantaneous for Fe and Ni–Fe. - Abstract: This study focuses on the electrodeposition of Ni and Ni–Fe alloys from synthetic solutions similar to those obtained by the dissolution of electron gun (an electrical component of cathode ray tubes) waste. The influence of various parameters (pH, electrolyte composition, Ni{sup 2+}/Fe{sup 2+} ratio, current density) on the electrodeposition process was investigated. Scanning electron microscopy (SEM) and X-ray fluorescence analysis (XRFA) were used to provide information about the obtained deposits’ thickness, morphology, and elemental composition. By controlling the experimental parameters, the composition of the Ni–Fe alloys can be tailored towards specific applications. Complementarily, the differences in the nucleation mechanisms for Ni, Fe and Ni–Fe deposition from sulfate solutions have been evaluated and discussed using cyclic voltammetry and potential step chronoamperometry. The obtained results suggest a progressive nucleation mechanism for Ni, while for Fe and Ni–Fe, the obtained data points are best fitted to an instantaneous nucleation model.

  4. Electronic structure of O-doped SiGe calculated by DFT + U method

    Science.gov (United States)

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  5. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  6. Modeling copper precipitation hardening and embrittlement in a dilute Fe-0.3at.%Cu alloy under neutron irradiation

    Science.gov (United States)

    Bai, Xian-Ming; Ke, Huibin; Zhang, Yongfeng; Spencer, Benjamin W.

    2017-11-01

    Neutron irradiation in light water reactors can induce precipitation of nanometer sized Cu clusters in reactor pressure vessel steels. The Cu precipitates impede dislocation gliding, leading to an increase in yield strength (hardening) and an upward shift of ductile-to-brittle transition temperature (embrittlement). In this work, cluster dynamics modeling is used to model the entire Cu precipitation process (nucleation, growth, and coarsening) in a Fe-0.3at.%Cu alloy under neutron irradiation at 300°C based on the homogenous nucleation mechanism. The evolution of the Cu cluster number density and mean radius predicted by the modeling agrees well with experimental data reported in literature for the same alloy under the same irradiation conditions. The predicted precipitation kinetics is used as input for a dispersed barrier hardening model to correlate the microstructural evolution with the radiation hardening and embrittlement in this alloy. The predicted radiation hardening agrees well with the mechanical test results in the literature. Limitations of the model and areas for future improvement are also discussed in this work.

  7. Application of invariant plane strain (IPS) theory to {gamma} hydride formation in dilute Zr-Nb alloys

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, D. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India)]. E-mail: dsrivastavabarc@yahoo.co.in; Neogy, S. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India); Dey, G.K. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India); Banerjee, S. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India); Ranganathan, S. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India)

    2005-04-25

    The crystallographic aspects associated with the formation of the {gamma} hydride phase (fct) from the {alpha} (hcp) phase and the {beta} (bcc) phase in Zr-Nb alloys have been studied in two distinct situations, viz., in the {alpha} matrix in pure Zr and Zr-2.5Nb and in the {beta} matrix in {beta} stabilized Zr-20Nb alloy. The {beta}-{gamma} formation can be treated primarily as a simple shear on the basal plane involving a change in the stacking sequence. A possible mechanism for {alpha}-{gamma} transformation has been presented in this paper. In this paper the {beta}->{gamma} transformation has been considered in terms of the invariant plane strain theory (IPS) in order to predict the crystallographic features of the {gamma} hydride formed. The lattice invariant shear (LIS) (110){sub {beta}}[1-bar 10]{sub {beta}}||(111){sub {gamma}}[12-bar 1]{sub {gamma}} has been considered and the crystallographic parameters associated with bcc->fct transformation, such as the habit plane and the magnitude of the LIS and the shape strain have been computed. The predictions made in the present analysis have been compared with experimentally observed habit planes. The {alpha}/{gamma} and {beta}/{gamma} interface has been examined by high resolution transmission electron microscopy (HRTEM) technique to compare with the interfaces observed in martensitic transformations.

  8. Application of invariant plane strain (IPS) theory to γ hydride formation in dilute Zr-Nb alloys

    International Nuclear Information System (INIS)

    Srivastava, D.; Neogy, S.; Dey, G.K.; Banerjee, S.; Ranganathan, S.

    2005-01-01

    The crystallographic aspects associated with the formation of the γ hydride phase (fct) from the α (hcp) phase and the β (bcc) phase in Zr-Nb alloys have been studied in two distinct situations, viz., in the α matrix in pure Zr and Zr-2.5Nb and in the β matrix in β stabilized Zr-20Nb alloy. The β-γ formation can be treated primarily as a simple shear on the basal plane involving a change in the stacking sequence. A possible mechanism for α-γ transformation has been presented in this paper. In this paper the β->γ transformation has been considered in terms of the invariant plane strain theory (IPS) in order to predict the crystallographic features of the γ hydride formed. The lattice invariant shear (LIS) (110) β [1-bar 10] β ||(111) γ [12-bar 1] γ has been considered and the crystallographic parameters associated with bcc->fct transformation, such as the habit plane and the magnitude of the LIS and the shape strain have been computed. The predictions made in the present analysis have been compared with experimentally observed habit planes. The α/γ and β/γ interface has been examined by high resolution transmission electron microscopy (HRTEM) technique to compare with the interfaces observed in martensitic transformations

  9. Effects of cell size and macrosegregation on the corrosion behavior of a dilute Pb-Sb alloy

    Energy Technology Data Exchange (ETDEWEB)

    Rosa, Daniel M.; Spinelli, Jose E.; Osorio, Wislei R.; Garcia, Amauri [Department of Materials Engineering, State University of Campinas-UNICAMP, P.O. Box 6122, 13083-970 Campinas, Sao Paulo (Brazil)

    2006-11-08

    The aim of this study was to examine the effect of cooling rate on the cellular growth of a Pb-0.85wt%Sb alloy and to evaluate the influences of cell size and of the corresponding macrosegregation profile on the resultant corrosion behavior. In order to obtain the as-cast samples a water-cooled unidirectional solidification system was used. Such experimental set-up has permitted the development of a clear cellular structural array even for relative high cooling rates and has allowed a wide range of solidification conditions to be analyzed. Macrostructural and microstructural aspects along the casting were characterized by optical microscopy and scanning electron microscope (SEM) techniques. The electrochemical impedance spectroscopy technique and potentiodynamic curves (Tafel extrapolation) were used to analyze the corrosion resistance of samples collected along the casting length and immersed in a 0.5M H{sub 2}SO{sub 4} solution at 25{sup o}C. It was found that the corrosion rate decreases with increasing cell spacing and that the pre-programming of microstructure cell size can be used as an alternative way to produce as-cast components of Pb-Sb alloys, such as battery grids, with better corrosion resistance. (author)

  10. A comparative study of the effects of thermal- and fast-neutron irradiation on some selected dilute face centered cubic alloys

    International Nuclear Information System (INIS)

    Piani, C.S.B.

    1981-12-01

    Point defect reactions in Pt and Cu and certain dilute alloys were investigated using a resistivity method following either fast-neutron or thermal-neutron irradiation at 4 K. An enhanced irradiation-induced resistivity in certain of the alloys could be attributed to actual enhanced defect production. This was related to a mechanism involving defocussing of replacement collision chains at impurities, together with possible nucleation of interstitial clusters at impurities. The close-pair recovery substages I(A), I(B) and I(C), strongly evident in thermal-neutron-irradiated materials, were suppressed by fast-neutron irradiation. This could be related to the higher energy transfers during irradiation and to significant amounts of irradiation annealing (spontaneous recombination). Fast-neutron cascades favoured interstitial clustering and reduced recovery of the interstitial migration substages I(D) and I(E). Interstitial trapping at impurities during I(D) and I(E) although evident, was less effective in fast-neutron irradiation. Higher concentrations of impurities reduced close-pair recovery as well. Stage II detrapping was related to the trapping efficiency of impurities, as well as to the effective defect concentration. Oversized impurities (Au in Pt or Cu) acted as weak traps, while undersized impurities (Cu or Ni in Pt) appeared to from deeper 'mixed-dumbbell' traps. The 120 K substage in Pt had a unique activation energy approximately 0,37 plus minus 0,03 eV, but did not seem to be due to an impurity detrapping process. It was not possible to attribute the 360 K stage in Pt with a unique activation energy in fast-neutron irradiation

  11. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  12. Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Calderón, Jorge A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas, Universidad del Rosario, Cra. 24 No. 63C-69, Bogotá (Colombia); Dussan, A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia)

    2017-02-28

    Highlights: • (GaMn)Sb thin films were fabricated using the direct current (DC) magnetron co-sputtering. • Presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases. • A minor difference of 1% was found with respect to percolation theory, which confirmed the validity of the diffusional model in semiconductor alloys with magnetic properties. • Increase in the localized states density (N{sub F}) with increasing substrate temperature. - Abstract: We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

  13. Stage I/sub E/ recovery of electron-irradiated pure silver and of its dilute alloys with cadmium and indium

    International Nuclear Information System (INIS)

    Rizk, R.; Vajda, P.; Maury, F.; Lucasson, A.; Lucasson, P.

    1977-01-01

    Irradiations of silver specimens with electrons in the energy range 0.4--1.7 MeV were performed at liquid-helium temperatures. A subthreshold phenomenon has been observed which is taking over below approx. 750 keV. After separation of this effect, we have studied the annealing spectra of pure silver and of AgCd (25 and 50 ppm Cd) and AgIn (15 and 50 ppm In) diluted alloys following irradiation with different doses of 1.7-MeV electrons and after irradiation doping. The stage I/sub E/ recovery has been analyzed in terms of the chemical reaction rate theory. The corresponding rate equations have been solved numerically, and and the following values for the capture radii of a silver self-interstitial atom by a Cd and an In impurity were obtained: r/sub Cd//sup Ag/ = 0.15r/sub v/, r/sub In//sup Ag/ = (0.05--0.10) r/sub v/, where r/sub v/ is its annihilation radius at a vacancy. The best fit was obtained with a value of E/sub m/ = 88 meV for the migration energy of a self-interstitial

  14. The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy

    Science.gov (United States)

    Zhao, Chuan-Zhen; Zhu, Min-Min; Wang, Jun; Wang, Sha-Sha; Lu, Ke-Qing

    2018-05-01

    The research on the temperature dependence of the band gap energy of the dilute bismuth GaBixAs1-x alloy has been done. It is found that its temperature insensitiveness is due to the enhanced localized character of the valence band state and the small decrease of the temperature coefficient for the conduction band minimum (CBM). The enhanced localized character of the valence band state is the main factor. In order to describe the localized effect of the Bi levels on the valence band, the localized energy is introduced into the Varshni's equation. It is found that the effect of the localized Bi level on the valence band becomes strong with increasing Bi content. In addition, it is found that the pressure dependence of the band gap energy of GaBixAs1-x does not seem to be influenced by the localized Bi levels. It is due to two factors. One is that the pressure dependence of the band gap energy is mainly determined by the D CBM of GaBixAs1-x. The D CBM of GaBixAs1-x is not influenced by the localized Bi levels. The other is that the small variation of the pressure coefficient for the D valence band maximum (VBM) state of GaBixAs1-x can be cancelled by the variation of the pressure coefficient for the D CBM state of GaBixAs1-x.

  15. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  16. On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

    Science.gov (United States)

    Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

    2015-03-01

    This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

  17. Microstructural evolution under high flux irradiation of dilute Fe-CuNiMnSi alloys studied by an atomic kinetic Monte Carlo model accounting for both vacancies and self interstitials

    International Nuclear Information System (INIS)

    Vincent, E.; Becquart, C.S.; Domain, C.

    2008-01-01

    Under neutron irradiation, a large amount of point defects (vacancies and interstitials) are created. In the irradiated pressure vessel steels, weakly alloyed, these point defects are responsible for the diffusion of the solute atoms, leading to the formation of solute rich precipitates within the matrix. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects with solute atoms in dilute FeX alloys (X = Cu, Mn, Ni or Si). For Mn, the results of these calculations lead to think that solute transport in α-Fe can very likely take place through an interstitial mechanism as well as via vacancies while the other solutes (Cu, Ni and Si) which establish strong bonds with vacancies diffuse more likely via vacancies only. The database thus created has been used to parameterize an atomic kinetic Monte Carlo model taking into account both vacancies and interstitials. Some results of irradiation damage in dilute Fe-CuNiMnSi alloys obtained with this model will be presented

  18. Microstructural evolution under high flux irradiation of dilute Fe CuNiMnSi alloys studied by an atomic kinetic Monte Carlo model accounting for both vacancies and self interstitials

    Science.gov (United States)

    Vincent, E.; Becquart, C. S.; Domain, C.

    2008-12-01

    Under neutron irradiation, a large amount of point defects (vacancies and interstitials) are created. In the irradiated pressure vessel steels, weakly alloyed, these point defects are responsible for the diffusion of the solute atoms, leading to the formation of solute rich precipitates within the matrix. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects with solute atoms in dilute FeX alloys (X = Cu, Mn, Ni or Si). For Mn, the results of these calculations lead to think that solute transport in α-Fe can very likely take place through an interstitial mechanism as well as via vacancies while the other solutes (Cu, Ni and Si) which establish strong bonds with vacancies diffuse more likely via vacancies only. The database thus created has been used to parameterize an atomic kinetic Monte Carlo model taking into account both vacancies and interstitials. Some results of irradiation damage in dilute Fe-CuNiMnSi alloys obtained with this model will be presented.

  19. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    International Nuclear Information System (INIS)

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

    2011-01-01

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  20. Low thermal budget surface preparation of Si and SiGe

    International Nuclear Information System (INIS)

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  1. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  2. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  3. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  4. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Science.gov (United States)

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  5. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  6. Dilution Confusion: Conventions for Defining a Dilution

    Science.gov (United States)

    Fishel, Laurence A.

    2010-01-01

    Two conventions for preparing dilutions are used in clinical laboratories. The first convention defines an "a:b" dilution as "a" volumes of solution A plus "b" volumes of solution B. The second convention defines an "a:b" dilution as "a" volumes of solution A diluted into a final volume of "b". Use of the incorrect dilution convention could affect…

  7. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  8. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  9. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  10. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  11. Influence of the allotropic beta to alpha transformation and of oxygen on the distribution of plutonium in Zr-Pu and Ti-Pu dilute alloys

    CERN Document Server

    Languille, A; Remy, C

    1972-01-01

    Ti-Pu, Zr-Pu and Ti-U alloys, annealed above the transformation point, can show major segregation after cooling. The segregations increase with oxygen content. Annealing at high temperatures followed by severe quenching can cause them to disappear. (7 refs).

  12. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  13. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  14. Method for producing evaporation inhibiting coating for protection of silicon--germanium and silicon--molybdenum alloys at high temperatures in vacuum

    Science.gov (United States)

    Chao, P.J.

    1974-01-01

    A method is given for protecting Si--Ge and Si-- Mo alloys for use in thermocouples. The alloys are coated with silicon to inhibit the evaporation of the alloys at high tempenatures in a vacuum. Specific means and methods are provided. (5 fig) (Official Gazette)

  15. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  16. Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yu, K.M.; Wu, J.; Walukiewicz, W.; Shan, W.; Beeman, J.; Mars, D.E.; Chamberlin, D.R.; Scarpulla, M.A.; Dubon, O.D.; Ridgway, M.C.; Geisz, J.F.

    2003-07-23

    We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN{sub x}As{sub 1-x} alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV{sub Ga}-N{sub As} pairs. In Si doped GaInN{sub 0.017}As{sub 0.983} the electron concentration starts to decrease rapidly at an annealing temperature of 700 C from {approx} 3 x 10{sup 19}cm{sup -3} in the as-grown state to less than 10{sup 16}cm{sup -3} after an annealing at 900 C for 10 s. At the same time annealing of this sample at 950 C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si{sub Ga}-N{sub As} pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N{sub As} site. The general nature of this mutual passivation effect is confirmed by our study of Ge doped GaN{sub x}As{sub 1-x} layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting.

  17. Modeling the Effects of Cu Content and Deformation Variables on the High-Temperature Flow Behavior of Dilute Al-Fe-Si Alloys Using an Artificial Neural Network.

    Science.gov (United States)

    Shakiba, Mohammad; Parson, Nick; Chen, X-Grant

    2016-06-30

    The hot deformation behavior of Al-0.12Fe-0.1Si alloys with varied amounts of Cu (0.002-0.31 wt %) was investigated by uniaxial compression tests conducted at different temperatures (400 °C-550 °C) and strain rates (0.01-10 s -1 ). The results demonstrated that flow stress decreased with increasing deformation temperature and decreasing strain rate, while flow stress increased with increasing Cu content for all deformation conditions studied due to the solute drag effect. Based on the experimental data, an artificial neural network (ANN) model was developed to study the relationship between chemical composition, deformation variables and high-temperature flow behavior. A three-layer feed-forward back-propagation artificial neural network with 20 neurons in a hidden layer was established in this study. The input parameters were Cu content, temperature, strain rate and strain, while the flow stress was the output. The performance of the proposed model was evaluated using the K-fold cross-validation method. The results showed excellent generalization capability of the developed model. Sensitivity analysis indicated that the strain rate is the most important parameter, while the Cu content exhibited a modest but significant influence on the flow stress.

  18. Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2004-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...

  19. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  20. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Science.gov (United States)

    Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-01

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  1. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    International Nuclear Information System (INIS)

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

    2010-01-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

  2. Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

    Directory of Open Access Journals (Sweden)

    Chie-In Lee

    2016-01-01

    Full Text Available Noise parameters of silicon germanium (SiGe heterojunction bipolar transistors (HBTs for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

  3. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  4. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    International Nuclear Information System (INIS)

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  5. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  6. Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

    Science.gov (United States)

    Yang, Lina; Minnich, Austin J

    2017-03-14

    Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

  7. Investigating ESD sensitivity in electrostatic SiGe MEMS

    International Nuclear Information System (INIS)

    Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

    2010-01-01

    The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

  8. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  9. Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

    Energy Technology Data Exchange (ETDEWEB)

    Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2011-07-15

    The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

  10. Observation of divergent La3+ ion dilute effect in two series of 3-D fluorescent lanthanide-MOFs-based molecular alloys RExLa1−x–EBTC (RE3+=Eu3+ or Tb3+; EBTC4−=1,1′-ethynebenzene-3,3′,5,5′-etracarboxylate)

    International Nuclear Information System (INIS)

    Zhai, Lu; Zhang, Wen-Wei; Ren, Xiao-Ming; Zuo, Jing-Lin

    2015-01-01

    The lanthanide metal-organic frameworks (MOFs) [Ln 2 (EBTC) 1.5 (CH 3 OH) 4 ]·6H 2 O are isostructural to each other, where EBTC 4− =1,1′-ethynebenzene-3,3′,5,5′-tetracarboxylate; Ln 3+ =La 3+ , Eu 3+ and Tb 3+ ; and the corresponding MOF is abbreviated as Ln–EBTC. MOFs Eu–EBTC and Tb–EBTC emit intense red and green luminescence (visible by bare eyes), respectively. The molecular alloys of Eu x La 1−x –EBTC and Tb x La 1−x –EBTC have been successfully prepared by mixing Eu 3+ /Tb 3+ and La 3+ salts with the desired molar ratio in the starting material. Two series of Eu x La 1−x –EBTC and Tb x La 1−x –EBTC molecular alloys are isomorphic to the parent Ln–EBTC MOFs, while exhibit divergent La 3+ ion diluting effect, namely, with increasing the relative amount of La 3+ , the intensity of characteristic emission arising from Tb 3+ ion monotonely increases in Tb x La 1−x –EBTC molecular alloys, whereas that of Eu 3+ ion shows non-monotone decrease in Eu x La 1−x –EBTC molecular alloys. The possible origin is discussed for such a divergent behavior between Eu x La 1−x –EBTC and Tb x La 1−x –EBTC molecular alloys. - Graphical abstract: Two series of 3-D fluorescent lanthanide-MOFs-based molecular alloys RE x La 1−x –EBTC (RE 3+ =Eu 3+ or Tb 3+ ; EBTC 4− =1,1′-ethynebenzene-3,3′,5,5′-tetracarboxylate) have been successfully prepared by mixing Eu 3+ /Tb 3+ and La 3+ salts with the desired molar ratio in the starting material and showed photoluminescence property with divergent La 3+ ion dilute effect. - Highlights: • 3-D molecular alloys of Eu x La 1−x –EBTC and Tb x La 1−x –EBTC were prepared. • They are isomorphic to the parent Ln–EBTC MOFs. • They show photoluminescence property with divergent La 3+ ion diluting effect. • The possible origin is discussed for such a divergent behavior

  11. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  12. Thermopower of dilute alloys of indium

    International Nuclear Information System (INIS)

    Dudenhoeffer, A.W.

    1974-01-01

    An experimental investigation of a new theory of electron-diffusion thermopower is discussed. A figure of merit for this ''Nielsen--Taylor'' theory in various metals is established, and it indicates that the effect should be largest in lead, indium, thallium, and aluminum, in that order. Previous investigations have been carried out for lead and aluminum. The thermopower of indium (or any metal) changes when impurity scattering centers are introduced into it. This change in the thermopower as a function of temperature is analyzed in terms of the Nielsen--Taylor theory and in terms of the competing process known as ''phonon drag.'' Definite conclusions as to the validity of the new theory are hampered by the complex nature of this phonon drag, but the experimental data is consistent with the Nielsen--Taylor theory. (Diss. Abstr. Int., B)

  13. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  14. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  15. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  16. Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.; hide

    2009-01-01

    SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

  17. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  18. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

    Science.gov (United States)

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

    2015-11-16

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

  19. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Science.gov (United States)

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  20. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  1. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  2. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Directory of Open Access Journals (Sweden)

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  3. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  4. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  5. Hybridizing pines with diluted pollen

    Science.gov (United States)

    Robert Z. Callaham

    1967-01-01

    Diluted pollens would have many uses by the tree breeder. Dilutions would be particularly advantageous in making many controlled pollinations with a limited amount of pollen. They also would be useful in artificial mass pollinations of orchards or single trees. Diluted pollens might help overcome troublesome genetic barriers to crossing. Feasibility o,f using diluted...

  6. Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

    Science.gov (United States)

    Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

    2016-12-01

    It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

  7. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    International Nuclear Information System (INIS)

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  8. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  9. Helium dilution refrigerator

    International Nuclear Information System (INIS)

    1973-01-01

    A new system of continuous heat exchange for a helium dilution refrigerator is proposed. The 3 He effluent tube is concurrent with the affluent mixed helium tube in a vertical downward direction. Heat exchange efficiency is enhanced by placing in series a number of elements with an enlarged surface area

  10. Isotope dilution analysis

    Energy Technology Data Exchange (ETDEWEB)

    Fudge, A.

    1978-12-15

    The following aspects of isotope dilution analysis are covered in this report: fundamental aspects of the technique; elements of interest in the nuclear field, choice and standardization of spike nuclide; pre-treatment to achieve isotopic exchange and chemical separation; sensitivity; selectivity; and accuracy.

  11. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  12. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  13. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  14. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

    Science.gov (United States)

    De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

    1996-08-01

    This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

  15. Zirconium alloy barrier having improved corrosion resistance

    International Nuclear Information System (INIS)

    Adamson, R.B.; Rosenbaum, H.S.

    1983-01-01

    A nuclear fuel element for use in the core of a nuclear reactor has a composite cladding container having a substrate and a dilute zirconium alloy liner bonded to the inside surface of the substrate. The dilute zirconium alloy liner forms about 1 to about 20 percent of the thickness of the cladding and is comprised of zirconium and a metal selected from the group consisting of iron, chromium, iron plus chromium, and copper. The dilute zirconium alloy liner shields the substrate from impurities or fission products from the nuclear fuel material and protects the substrate from stress corrosion and stress cracking. The dilute zirconium alloy liner displays greater corrosion resistance, especially to oxidation by hot water or steam than unalloyed zirconium. The substrate material is selected from conventional cladding materials, and preferably is a zirconium alloy. (author)

  16. Total dose hardness of a commercial SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Van Vonno, N.; Lucas, R.; Thornberry, D.

    1999-01-01

    Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)

  17. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  18. De-embedding and Modelling of pnp SiGe HBTs

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

    2007-01-01

    In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to accoun...

  19. A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2013-01-01

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

  20. SiGe Based Low Temperature Electronics for Lunar Surface Applications

    Science.gov (United States)

    Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

    2012-01-01

    The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

  1. SiGe Integrated Circuit Developments for SQUID/TES Readout

    Science.gov (United States)

    Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

    2018-03-01

    SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

  2. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  3. SigE Is a Chaperone for the Salmonella enterica Serovar Typhimurium Invasion Protein SigD

    OpenAIRE

    Darwin, K. Heran; Robinson, Lloyd S.; Miller, Virginia L.

    2001-01-01

    SigD is translocated into eucaryotic cells by a type III secretion system. In this work, evidence that the putative chaperone SigE directly interacts with SigD is presented. A bacterial two-hybrid system demonstrated that SigE can interact with itself and SigD. In addition, SigD was specifically copurified with SigE-His6 on a nickel column.

  4. Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

    OpenAIRE

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2016-01-01

    The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

  5. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  6. Critical Role of a Single Position in the −35 Element for Promoter Recognition by Mycobacterium tuberculosis SigE and SigH▿

    OpenAIRE

    Song, Taeksun; Song, Seung-Eun; Raman, Sahadevan; Anaya, Mauricio; Husson, Robert N.

    2008-01-01

    Mycobacterial SigE and SigH both initiate transcription from the sigB promoter, suggesting that they recognize similar sequences. Through mutational and primer extension analyses, we determined that SigE and SigH recognize nearly identical promoters, with differences at the 3′ end of the −35 element distinguishing between SigE- and SigH-dependent promoters.

  7. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

    Science.gov (United States)

    Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

    2011-02-09

    We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.

  8. Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

    Science.gov (United States)

    Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

    2013-12-27

    The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

  9. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  10. Integrated X-band FMCW front-end in SiGe BiCMOS

    NARCIS (Netherlands)

    Suijker, Erwin; de Boer, Lex; Visser, Guido; van Dijk, Raymond; Poschmann, Michael; van Vliet, Frank Edward

    2010-01-01

    An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the

  11. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.; hide

    2009-01-01

    SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

  12. SiGe derivatization by spontaneous reduction of aryl diazonium salts

    Science.gov (United States)

    Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

    2013-10-01

    Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

  13. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  14. SiGe BiCMOS manufacturing platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  15. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Science.gov (United States)

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  16. Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme With Spectral Transmissivity

    Directory of Open Access Journals (Sweden)

    Xin Ran

    2018-05-01

    Full Text Available The knowledge of interfacial phonon transport accounting for detailed phonon spectral properties is desired because of its importance for design of nanoscale energy systems. In this work, we investigate the interfacial phonon transport through Si/Ge multilayer films using an efficient Monte Carlo scheme with spectral transmissivity, which is validated for cross-plane phonon transport through both Si/Ge single-layer and Si/Ge bi-layer thin films by comparing with the discrete-ordinates solution. Different thermal boundary conductances between even the same material pair are declared at different interfaces within the multilayer system. Furthermore, the thermal boundary conductances at different interfaces show different trends with varying total system size, with the variation slope, very different as well. The results are much different from those in the bi-layer thin film or periodic superlattice. These unusual behaviors can be attributed to the combined interfacial local non-equilibrium effect and constraint effect from other interfaces.

  17. Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

  18. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Science.gov (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  19. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  20. Legirani praški za navarjanje z večžično elektrodo: Alloyed fluxes for surfacing with multiple - wire electrode:

    OpenAIRE

    Kejžar, Božena; Kejžar, Rajko

    1997-01-01

    Submerged arc surfacing with alloyed agglomerated fluxes permits unalloyed and low-alloy structural steels to be surfaced in one layer of high-alloyed claddings. Surfacing dilution produced by fusion of the parent metal, and burn-off of alloying elements are substituted by additional alloying by means of a welding flux, which is, in the case of the above-mentioned surfacing processes, the main carrier of alloying elements for surfacing alloying. With alloyed agglomerated fluxes, it is recomme...

  1. sigE facilitates the adaptation of Bordetella bronchiseptica to stress conditions and lethal infection in immunocompromised mice

    Directory of Open Access Journals (Sweden)

    Barchinger Sarah E

    2012-08-01

    Full Text Available Abstract Background The cell envelope of a bacterial pathogen can be damaged by harsh conditions in the environment outside a host and by immune factors during infection. Cell envelope stress responses preserve the integrity of this essential compartment and are often required for virulence. Bordetella species are important respiratory pathogens that possess a large number of putative transcription factors. However, no cell envelope stress responses have been described in these species. Among the putative Bordetella transcription factors are a number of genes belonging to the extracytoplasmic function (ECF group of alternative sigma factors, some of which are known to mediate cell envelope stress responses in other bacteria. Here we investigate the role of one such gene, sigE, in stress survival and pathogenesis of Bordetella bronchiseptica. Results We demonstrate that sigE encodes a functional sigma factor that mediates a cell envelope stress response. Mutants of B. bronchiseptica strain RB50 lacking sigE are more sensitive to high temperature, ethanol, and perturbation of the envelope by SDS-EDTA and certain β-lactam antibiotics. Using a series of immunocompromised mice deficient in different components of the innate and adaptive immune responses, we show that SigE plays an important role in evading the innate immune response during lethal infections of mice lacking B cells and T cells. SigE is not required, however, for colonization of the respiratory tract of immunocompetent mice. The sigE mutant is more efficiently phagocytosed and killed by peripheral blood polymorphonuclear leukocytes (PMNs than RB50, and exhibits decreased cytotoxicity toward macrophages. These altered interactions with phagocytes could contribute to the defects observed during lethal infection. Conclusions Much of the work on transcriptional regulation during infection in B. bronchiseptica has focused on the BvgAS two-component system. This study reveals that the SigE

  2. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  3. Mobile Melt-Dilute Treatment for Russian Spent Nuclear Fuel

    International Nuclear Information System (INIS)

    Peacock, H.

    2002-01-01

    Treatment of spent Russian fuel using a Melt-Dilute (MD) process is proposed to consolidate fuel assemblies into a form that is proliferation resistant and provides critically safety under storage and disposal configurations. Russian fuel elements contain a variety of fuel meat and cladding materials. The Melt-Dilute treatment process was initially developed for aluminum-based fuels so additional development is needed for several cladding and fuel meat combinations in the Russian fuel inventory (e.g. zirconium-clad, uranium-zirconium alloy fuel). A Mobile Melt-Dilute facility (MMD) is being proposed for treatment of spent fuels at reactor site storage locations in Russia; thereby, avoiding the costs of building separate treatment facilities at each site and avoiding shipment of enriched fuel assemblies over the road. The MMD facility concept is based on laboratory tests conducted at the Savannah River Technology Center (SRTC), and modular pilot-scale facilities constructed at the Savannah River Site for treatment of US spent fuel. SRTC laboratory tests have shown the feasibility of operating a Melt-Dilute treatment process with either a closed system or a filtered off-gas system. The proposed Mobile Melt-Dilute process is presented in this paper

  4. Observation of divergent La{sup 3+} ion dilute effect in two series of 3-D fluorescent lanthanide-MOFs-based molecular alloys RE{sub x}La{sub 1−x}–EBTC (RE{sup 3+}=Eu{sup 3+} or Tb{sup 3+}; EBTC{sup 4−}=1,1′-ethynebenzene-3,3′,5,5′-etracarboxylate)

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, Lu [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Science, Nanjing Tech University, Nanjing 210009 (China); State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Wen-Wei, E-mail: wwzhang@nju.edu.cn [State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Ren, Xiao-Ming, E-mail: xmren@njtech.edu.cn [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Science, Nanjing Tech University, Nanjing 210009 (China); Zuo, Jing-Lin [State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

    2015-10-15

    The lanthanide metal-organic frameworks (MOFs) [Ln{sub 2}(EBTC){sub 1.5}(CH{sub 3}OH){sub 4}]·6H{sub 2}O are isostructural to each other, where EBTC{sup 4−}=1,1′-ethynebenzene-3,3′,5,5′-tetracarboxylate; Ln{sup 3+}=La{sup 3+}, Eu{sup 3+} and Tb{sup 3+}; and the corresponding MOF is abbreviated as Ln–EBTC. MOFs Eu–EBTC and Tb–EBTC emit intense red and green luminescence (visible by bare eyes), respectively. The molecular alloys of Eu{sub x}La{sub 1−x}–EBTC and Tb{sub x}La{sub 1−x}–EBTC have been successfully prepared by mixing Eu{sup 3+}/Tb{sup 3+} and La{sup 3+} salts with the desired molar ratio in the starting material. Two series of Eu{sub x}La{sub 1−x}–EBTC and Tb{sub x}La{sub 1−x}–EBTC molecular alloys are isomorphic to the parent Ln–EBTC MOFs, while exhibit divergent La{sup 3+} ion diluting effect, namely, with increasing the relative amount of La{sup 3+}, the intensity of characteristic emission arising from Tb{sup 3+} ion monotonely increases in Tb{sub x}La{sub 1−x}–EBTC molecular alloys, whereas that of Eu{sup 3+} ion shows non-monotone decrease in Eu{sub x}La{sub 1−x}–EBTC molecular alloys. The possible origin is discussed for such a divergent behavior between Eu{sub x}La{sub 1−x}–EBTC and Tb{sub x}La{sub 1−x}–EBTC molecular alloys. - Graphical abstract: Two series of 3-D fluorescent lanthanide-MOFs-based molecular alloys RE{sub x}La{sub 1−x}–EBTC (RE{sup 3+}=Eu{sup 3+} or Tb{sup 3+}; EBTC{sup 4−}=1,1′-ethynebenzene-3,3′,5,5′-tetracarboxylate) have been successfully prepared by mixing Eu{sup 3+}/Tb{sup 3+} and La{sup 3+} salts with the desired molar ratio in the starting material and showed photoluminescence property with divergent La{sup 3+} ion dilute effect. - Highlights: • 3-D molecular alloys of Eu{sub x}La{sub 1−x}–EBTC and Tb{sub x}La{sub 1−x}–EBTC were prepared. • They are isomorphic to the parent Ln–EBTC MOFs. • They show photoluminescence property with divergent La

  5. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  6. Lattice damage in ion-implanted silicon-germanium alloys

    International Nuclear Information System (INIS)

    Haynes, T.E.; Holland, O.W.

    1992-08-01

    The damage produced in Si 1-x Ge x alloys (0≤x≤1) by implantation of 70--100 keV 30 Si + has been measured as a function of temperature and fluence by ion channeling. For all compositions, the damage efficiency decreased sharply as the implant temperature was increased between room temperature and 150 degrees C. Furthermore, the damage efficiency in alloys of intermediate compositions (0.34≤x≤0.5) exceeds that in Ge, especially at elevated temperatures, despite the larger cascade energy density in Ge. It is shown that this behavior can be described based on a model in which the point-defect mobility is the dominant factor controlling damage retention, rather than the cascade energy density. This approach provides a framework for understanding other temperature-dependent phenomena related to damage growth in Si-Ge alloys including dose-rate effects and damage saturation in MeV implantation

  7. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  8. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  9. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  10. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  11. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  12. A note on the Sumerian expression SI-ge4-de3/dam

    Directory of Open Access Journals (Sweden)

    Widell, Magnus

    2002-12-01

    Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

  13. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  14. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  15. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    CERN Document Server

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  16. Dilute chemical decontamination program review

    International Nuclear Information System (INIS)

    Anstine, L.D.; Blomgren, J.C.; Pettit, P.J.

    1980-01-01

    The objective of the Dilute Chemical Decontamination Program is to develop and evaluate a process which utilizes reagents in dilute concentrations for the decontamination of BWR primary systems and for the maintenance of dose rates on the out-of-core surfaces at acceptable levels. A discussion is presented of the process concept, solvent development, advantages and disadvantages of reagent systems, and VNC loop tests. Based on the work completed to date it is concluded that (1) rapid decontamination of BWRs using dilute reagents is feasible; (2) reasonable reagent conditions for rapid chemical decontamination are: 0.01M oxalic acid + 0.005M citric acid, pH3.0, 90/degree/C, 0.5 to 1.0 ppm dissolved oxygen; (3) control of dissolved oxygen concentration is important, since high levels suppress the rate of decontamination and low levels allow precipitation of ferrous oxalate. 4 refs

  17. Tracer diffusion study in binary alloys

    International Nuclear Information System (INIS)

    Bocquet, Jean-Louis

    1973-01-01

    The diffusional properties of dilute alloys are quite well described with 5 vacancy jump frequencies: the diffusion experiments allow as to determine only 3 jump frequency ratios. The first experiment set, found by Howard and Manning, was used in order to determine the 3 frequency ratios in the dilute Cu-Fe alloy. N.V. Doan has shown that the isotope effect measurements may be replaced by easier electromigration experiments: this new method was used with success for the dilute Ag-Zn and Ag-Cd alloys. Two effects which take place in less dilute alloys cannot be explained with the 5 frequency model, these are: the linear enhancement of solute diffusion and the departure from linear enhancement of solvent diffusion versus solute concentration. To explain these effects, we have had to take account of the influence of solute pairs on diffusion via 53 new vacancy jump frequencies. Diffusion in a concentrated alloy can be described with a quasi-chemical approach: we show that a description with 'surrounded atoms' allows the simultaneous explanation of the thermodynamical properties of the binary solid solution, the dependence of atomic jump frequencies with respect to the local concentration of the alloy. In this model, the two atomic species have a jump frequency spectrum at their disposal, which seems to greatly modify Manning's correlation analysis. (author) [fr

  18. Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

    Science.gov (United States)

    Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

    2014-02-12

    Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

  19. Ordered Arrays of SiGe Islands from Low-Energy PECVD

    Directory of Open Access Journals (Sweden)

    Chrastina D

    2010-01-01

    Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

  20. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  1. Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

    Energy Technology Data Exchange (ETDEWEB)

    Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

    2016-08-31

    This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.

  2. Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Praveen, K.C.; Pushpa, N.; Naik, P.S. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Tripathi, Ambuj [Inter University Accelerator Centre (IUAC), New Delhi 110 067 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Total dose effects of 50 MeV Li3+ ion on 50 GHz SiGe HBTs is investigated. Black-Right-Pointing-Pointer Ion irradiated results were compared with Co-60 gamma results. Black-Right-Pointing-Pointer 50 MeV Li ions create more damage in E-B spacer oxide when compared to Co-60 gamma radiation. Black-Right-Pointing-Pointer Co-60 gamma radiation create more damage in STI oxide when compared to 50 MeV Li ions. Black-Right-Pointing-Pointer Worst case total dose radiation effects can be studied using Pelletron accelerator facilities. - Abstract: We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li{sup 3+} ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter-base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

  3. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Directory of Open Access Journals (Sweden)

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  4. High-throughput ab-initio dilute solute diffusion database.

    Science.gov (United States)

    Wu, Henry; Mayeshiba, Tam; Morgan, Dane

    2016-07-19

    We demonstrate automated generation of diffusion databases from high-throughput density functional theory (DFT) calculations. A total of more than 230 dilute solute diffusion systems in Mg, Al, Cu, Ni, Pd, and Pt host lattices have been determined using multi-frequency diffusion models. We apply a correction method for solute diffusion in alloys using experimental and simulated values of host self-diffusivity. We find good agreement with experimental solute diffusion data, obtaining a weighted activation barrier RMS error of 0.176 eV when excluding magnetic solutes in non-magnetic alloys. The compiled database is the largest collection of consistently calculated ab-initio solute diffusion data in the world.

  5. Exchange interactions in iron and dilute iron alloys

    NARCIS (Netherlands)

    Schurer, Pier Jouke

    1972-01-01

    In dit proefschrift is een onderzoek beschreven dat tot doel had meer inzicht te verschaffen in de oorsprong van het ferromagnetische gedrag van ijzer en verdunde ijzerlegeringen. Op grond van verschillende experimentele gegevens kan men vermoeden dat het ferromagnetisme in ijzer een tweeslachtig

  6. Simulation of dislocation glide in dilute Fe-Cu alloys

    International Nuclear Information System (INIS)

    Tapasa, K.; Bacon, D.J.; Osetsky, Yu.N.

    2005-01-01

    The effects on dislocation glide of the substitutional element copper in solution in α-iron are being investigated by computer simulation. In the first phase, the critical stress for a 1/2 {110} edge dislocation to overcome configurations of either a single or two nearest-neighbour solute atoms is simulated. Molecular statics and dynamics methods are used to simulate effects at temperature equal to and greater than 0K, respectively. Single copper atoms and nearest-neighbour pairs in the first atomic plane below the glide plane give the strongest barrier to dislocation glide, in partial agreement with elasticity theory. In addition to temperature, obstacle-spacing effects are considered

  7. Alloy materials

    Energy Technology Data Exchange (ETDEWEB)

    Hans Thieme, Cornelis Leo (Westborough, MA); Thompson, Elliott D. (Coventry, RI); Fritzemeier, Leslie G. (Acton, MA); Cameron, Robert D. (Franklin, MA); Siegal, Edward J. (Malden, MA)

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  8. Primary system boron dilution analysis

    International Nuclear Information System (INIS)

    Crump, R.J.; Naretto, C.J.; Borgen, R.A.; Rockhold, H.C.

    1978-01-01

    The results are presented for an analysis conducted to determine the potential paths through which nonborated water or water with insufficient boron concentration might enter the LOFT primary coolant piping system or reactor vessel to cause dilution of the borated primary coolant water. No attempt was made in the course of this analysis to identify possible design modifications nor to suggest changes in administrative procedures or controls

  9. Cryogen-free dilution refrigerators

    International Nuclear Information System (INIS)

    Uhlig, K

    2012-01-01

    We review briefly our first cryogen-free dilution refrigerator (CF-DR) which was precooled by a GM cryocooler. We then show how today's dry DRs with pulse tube precooling have developed. A few examples of commercial DRs are explained and noteworthy features pointed out. Thereby we describe the general advantages of cryogen-free DRs, but also show where improvements are still desirable. At present, our dry DR has a base temperature of 10 mK and a cooling capacity of 700 μW at a mixing chamber temperature of 100 mK. In our cryostat, in most recent work, an additional refrigeration loop was added to the dilution circuit. This 4 He circuit has a lowest temperature of about 1 K and a refrigeration capacity of up to 100 mW at temperatures slightly above 1 K; the dilution circuit and the 4 He circuit can be run separately or together. The purpose of this additional loop is to increase the cooling capacity for experiments where the cooling power of the still of the DR is not sufficient to cool cold amplifiers and cables, e.g. in studies on superconducting quantum circuits or astrophysical applications.

  10. Cryogen-free dilution refrigerators

    Science.gov (United States)

    Uhlig, K.

    2012-12-01

    We review briefly our first cryogen-free dilution refrigerator (CF-DR) which was precooled by a GM cryocooler. We then show how today's dry DRs with pulse tube precooling have developed. A few examples of commercial DRs are explained and noteworthy features pointed out. Thereby we describe the general advantages of cryogen-free DRs, but also show where improvements are still desirable. At present, our dry DR has a base temperature of 10 mK and a cooling capacity of 700 μW at a mixing chamber temperature of 100 mK. In our cryostat, in most recent work, an additional refrigeration loop was added to the dilution circuit. This 4He circuit has a lowest temperature of about 1 K and a refrigeration capacity of up to 100 mW at temperatures slightly above 1 K; the dilution circuit and the 4He circuit can be run separately or together. The purpose of this additional loop is to increase the cooling capacity for experiments where the cooling power of the still of the DR is not sufficient to cool cold amplifiers and cables, e.g. in studies on superconducting quantum circuits or astrophysical applications.

  11. Plutonium determination by isotope dilution

    International Nuclear Information System (INIS)

    Lucas, M.

    1980-01-01

    The principle is to add to a known amount of the analysed solution a known amount of a spike solution consisting of plutonium 242. The isotopic composition of the resulting mixture is then determined by surface ionization mass spectrometry, and the plutonium concentration in the solution is deduced, from this measurement. For irradiated fuels neutronic studies or for fissile materials balance measurements, requiring the knowledge of the ratio U/Pu or of concentration both uranium and plutonium, it is better to use the double spike isotope dilution method, with a spike solution of known 233 U- 242 Pu ratio. Using this method, the ratio of uranium to plutonium concentration in the irradiated fuel solution can be determined without any accurate measurement of the mixed amounts of sample and spike solutions. For fissile material balance measurements, the uranium concentration is determined by using single isotope dilution, and the plutonium concentration is deduced from the ratio Pu/U and U concentration. The main advantages of isotope dilution are its selectivity, accuracy and very high sensitivity. The recent improvements made to surface ionization mass spectrometers have considerably increased the precision of the measurements; a relative precision of about 0.2% to 0.3% is obtained currently, but it could be reduced to 0.1%, in the future, with a careful control of the experimental procedures. The detection limite is around 0.1 ppb [fr

  12. A high linearity SiGe HBT LNA for GPS receiver

    International Nuclear Information System (INIS)

    Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

    2014-01-01

    A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

  13. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

  14. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

    International Nuclear Information System (INIS)

    Alaeddine, A; Genevois, C; Cuvilly, F; Daoud, K; Kadi, M

    2011-01-01

    This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects

  15. Examination Of Si-Ge Heterostructure Nanowire Growth Using Monte Carlo Simulation

    International Nuclear Information System (INIS)

    Nastovjak, A. G.; Neizvestny, I. G.; Shwartz, N. L.

    2011-01-01

    The process of Si-Ge heterostructures formation in nanowires (NWs) grown by vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diameter were obtained. Periodical oscillations of drop composition near mean value were observed. Oscillation results from layer-by-layer growth at the drop-whisker interface and necessity of supersaturation onset to start new layer formation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. This phenomenon is the main reason of heterojunction blurriness. Junction abruptness was found to be dependent on nanowhisker diameter: in adsorption-induced growth mode abruptness of heterojunction decreases with diameter and in diffusion-induced mode it increases.

  16. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  17. Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection

    Science.gov (United States)

    Malyutenko, V. K.; Malyutenko, O. Yu.; Leonov, V.; Van Hoof, C.

    2009-05-01

    The technology for self-supported membraneless polycrystalline SiGe thermal microemitters, their design, and performance are presented. The 128-element arrays with a fill factor of 88% and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60×60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate a thermal time constant of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The application of the devices to the infrared dynamic scene simulation and their benefit over conventional planar membrane-supported emitters are discussed.

  18. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    International Nuclear Information System (INIS)

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  19. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    International Nuclear Information System (INIS)

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  20. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  1. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    CERN Document Server

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  2. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

    2018-01-01

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  3. μ+ depolarization in AlGd alloys

    International Nuclear Information System (INIS)

    Kohn, S.; Brown, J.A.; Heffner, R.H.; Huang, C.Y.; Kitchens, T.A. Jr.; Leon, M.; Olsen, C.E.; Schillaci, M.E.

    1979-01-01

    The μ + depolarization rate in dilute AlGd alloys containing 50 and 450 atomic ppm Gd was measured in a transverse field of 80 Oe over the temperature range 6-300 K. For both alloys, Λ increased dramatically above 200 K, reaching values of 0.69 and 0.93 μs -1 , respectively, near room temperature. The results are interpreted as providing evidence for a thermally-activated trapping mechanism. (Auth.)

  4. Mechanistic origin and prediction of enhanced ductility in magnesium alloys

    Science.gov (United States)

    Wu, Zhaoxuan; Ahmad, Rasool; Yin, Binglun; Sandlöbes, Stefanie; Curtin, W. A.

    2018-01-01

    Development of ductile magnesium alloys is key to their use in reducing the weight of vehicles and other applications. Wu et al. tackle this issue by determining the underlying mechanisms in unprocessed magnesium alloys. Dilute amounts of solutes enhanced certain ductility-improving mechanisms over ones that cause brittle fracture. From this, the authors developed a theory that may be helpful for screening the large number of potential magnesium alloy compositions.

  5. Microstructure Development and Characteristics of Semisolid Aluminum Alloys; FINAL

    International Nuclear Information System (INIS)

    Merton Flemings; Srinath Viswanathan

    2001-01-01

    A drop forge viscometer was employed to investigate the flow behavior under very rapid compression rates of A357, A356 diluted with pure aluminum and Al-4.5%Cu alloys. The A357 alloys were of commercial origin (MHD and SIMA) and the rheocast, modified A356 and Al-4.5Cu alloys were produced by a process developed at the solidification laboratory of MIT

  6. A miniaturized plastic dilution refrigerator

    International Nuclear Information System (INIS)

    Bindilatti, V.; Oliveira, N.F.Jr.; Martin, R.V.; Frossati, G.

    1996-01-01

    We have built and tested a miniaturized dilution refrigerator, completely contained (still, heat exchanger and mixing chamber) inside a plastic (PVC) tube of 10 mm diameter and 170 mm length. With a 25 cm 2 CuNi heat exchanger, it reached temperatures below 50 mK, for circulation rates below 70 μmol/s. The cooling power at 100 mK and 63 μmol/s was 45 μW. The experimental space could accommodate samples up to 6 mm in diameter. (author)

  7. A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

    Science.gov (United States)

    Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

    2017-12-01

    Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

  8. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  9. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  10. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    International Nuclear Information System (INIS)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  11. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Science.gov (United States)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-12-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  12. Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

    Science.gov (United States)

    Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

    2010-09-01

    A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

  13. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  14. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-11-03

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

  15. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    .5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

  16. Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

    Science.gov (United States)

    Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

    2011-03-25

    The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.

  17. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  18. Antiferromagnetism in chromium alloy single crystals

    DEFF Research Database (Denmark)

    Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.

    1965-01-01

    The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) s...

  19. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  20. Buffer erosion in dilute groundwater

    International Nuclear Information System (INIS)

    Schatz, T.; Kanerva, N.; Martikainen, J.; Sane, P.; Olin, M.; Seppaelae, A.; Koskinen, K.

    2013-08-01

    One scenario of interest for repository safety assessment involves the loss of bentonite buffer material in contact with dilute groundwater flowing through a transmissive fracture interface. In order to examine the extrusion/erosion behavior of bentonite buffer material under such circumstances, a series of experiments were performed in a flow-through, 1 mm aperture, artificial fracture system. These experiments covered a range of solution chemistry (salt concentration and composition), material composition (sodium montmorillonite and admixtures with calcium montmorillonite), and flow velocity conditions. No erosion was observed for sodium montmorillonite against solution compositions from 0.5 g/L to 10 g/L NaCl. No erosion was observed for 50/50 calcium/sodium montmorillonite against 0.5 g/L NaCl. Erosion was observed for both sodium montmorillonite and 50/50 calcium/sodium montmorillonite against solution compositions ≤ 0.25 g/L NaCl. The calculated erosion rates for the tests with the highest levels of measured erosion, i.e., the tests run under the most dilute conditions (ionic strength (IS) < ∼1 mM), were well-correlated to flow velocity, whereas the calculated erosion rates for the tests with lower levels of measured erosion, i.e., the tests run under somewhat less dilute conditions (∼1 mM < IS < ∼4 mM), were not similarly correlated indicating that material and solution composition can significantly affect erosion rates. In every experiment, both erosive and non-erosive, emplaced buffer material extruded into the fracture and was observed to be impermeable to water flowing in the fracture effectively forming an extended diffusive barrier around the intersecting fracture/buffer interface. Additionally, a model which was developed previously to predict the rate of erosion of bentonite buffer material in low ionic strength water in rock fracture environments was applied to three different cases: sodium montmorillonite expansion in a vertical tube, a

  1. Proofs of cluster formation and transitions in liquid metals and alloys

    International Nuclear Information System (INIS)

    Filippov, E.S.

    1985-01-01

    Calculational and experimental proofs are presented indicating to existence of clusters in liquid metals and alloys. Systems of liquid alloys both on the base of ferrous metals and non-ferrous metals (Fe-C, Ni-C, Co-C, Fe-Ni, Ni-Mo, Co-Cr, Co-V as well as In-Sn, Bi-Sn, Si-Ge and others) are studied experimentally. It is shown that the general feature of the systems studied is sensitivity of a volume to change in structure, to replacement fcc structure on bcc or to initiation-dissociation of intermetallic compounds AxBy. It is shown that both in pure liquid metals and in their.alloys there are clusters as ordered aggregate of atoms

  2. Structural and electronic properties of Si1−xGex alloy nanowires

    International Nuclear Information System (INIS)

    Iori, Federico; Ossicini, Stefano; Rurali, Riccardo

    2014-01-01

    We present first-principles density-functional calculations of Si 1−x Ge x alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

  3. Aging of a complex Al-Cu based alloy modified by microalloying

    International Nuclear Information System (INIS)

    Maksimovic, Vesna; Jovanovic, Milan T.; Radmilovic, Velimir; Nikolic, Ruzica

    2003-01-01

    The results of the effect of small addition (0.25 at.%) of Ge on aging kinetics of a complex aluminum alloy containing (wt.%) 5.9% Cu, 0.28% Si and 0.6% (total amount of Fe, Ti, Mn, Zr and V) are presented in this paper. Aging was performed at 190 o C in the interval ranging from 10min to 256h. Hardness measurements, light (LM), transmission electron microscopy (TEM) and differential scanning calorimetry (DSC) were used for microstructural characterization during aging. It was shown that the maximum of hardness in alloy containing Ge was achieved three times faster than in the alloy without Ge. TEM results clearly revealed that the accelerated kinetics should be ascribed to heterogeneously nucleated Si-Ge particles serving as sites for dense and fine distribution of θ' strengthening precipitates. Accelerated kinetics of aging was accompanied by increase in hardness. (Original)

  4. Desynchronization in diluted neural networks

    International Nuclear Information System (INIS)

    Zillmer, Ruediger; Livi, Roberto; Politi, Antonio; Torcini, Alessandro

    2006-01-01

    The dynamical behavior of a weakly diluted fully inhibitory network of pulse-coupled spiking neurons is investigated. Upon increasing the coupling strength, a transition from regular to stochasticlike regime is observed. In the weak-coupling phase, a periodic dynamics is rapidly approached, with all neurons firing with the same rate and mutually phase locked. The strong-coupling phase is characterized by an irregular pattern, even though the maximum Lyapunov exponent is negative. The paradox is solved by drawing an analogy with the phenomenon of 'stable chaos', i.e., by observing that the stochasticlike behavior is 'limited' to an exponentially long (with the system size) transient. Remarkably, the transient dynamics turns out to be stationary

  5. A compact rotating dilution refrigerator

    Science.gov (United States)

    Fear, M. J.; Walmsley, P. M.; Chorlton, D. A.; Zmeev, D. E.; Gillott, S. J.; Sellers, M. C.; Richardson, P. P.; Agrawal, H.; Batey, G.; Golov, A. I.

    2013-10-01

    We describe the design and performance of a new rotating dilution refrigerator that will primarily be used for investigating the dynamics of quantized vortices in superfluid 4He. All equipment required to operate the refrigerator and perform experimental measurements is mounted on two synchronously driven, but mechanically decoupled, rotating carousels. The design allows for relative simplicity of operation and maintenance and occupies a minimal amount of space in the laboratory. Only two connections between the laboratory and rotating frames are required for the transmission of electrical power and helium gas recovery. Measurements on the stability of rotation show that rotation is smooth to around 10-3 rad s-1 up to angular velocities in excess of 2.5 rad s-1. The behavior of a high-Q mechanical resonator during rapid changes in rotation has also been investigated.

  6. Cast bulk metallic glass alloys: prospects as wear materials

    Energy Technology Data Exchange (ETDEWEB)

    Hawk, Jeffrey A.; Dogan, Omer N.; Shiflet, Gary J. (Dept. of Materials Science and Engineering, University of Virginia, Charlottesville, VA)

    2005-01-01

    Bulk metallic glasses are single phase materials with unusual physical and mechanical properties. One intriguing area of possible use is as a wear material. Usually, pure metals and single phase dilute alloys do not perform well in tribological conditions. When the metal or alloy is lightweight, it is usually soft leading to galling in sliding situations. For the harder metals and alloys, their density is usually high, so there is an energy penalty when using these materials in wear situations. However, bulk metallic glasses at the same density are usually harder than corresponding metals and dilute single phase alloys, and so could offer better wear resistance. This work will discuss preliminary wear results for metallic glasses with densities in the range of 4.5 to 7.9 g/cc. The wear behavior of these materials will be compared to similar metals and alloys.

  7. Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

    Science.gov (United States)

    Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

    2016-03-01

    Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

  8. Gas spectroscopy system with 245 GHz transmitter and receiver in SiGe BiCMOS

    Science.gov (United States)

    Schmalz, Klaus; Rothbart, Nick; Borngräber, Johannes; Yilmaz, Selahattin Berk; Kissinger, Dietmar; Hübers, Heinz-Wilhelm

    2017-02-01

    The implementation of an integrated mm-wave transmitter (TX) and receiver (RX) in SiGe BiCMOS or CMOS technology offers a path towards a compact and low-cost system for gas spectroscopy. Previously, we have demonstrated TXs and RXs for spectroscopy at 238 -252 GHz and 495 - 497 GHz using external phase-locked loops (PLLs) with signal generators for the reference frequency ramps. Here, we present a more compact system by using two external fractional-N PLLs allowing frequency ramps for the TX and RX, and for TX with superimposed frequency shift keying (FSK) or reference frequency modulation realized by a direct digital synthesizer (DDS) or an arbitrary waveform generator. The 1.9 m folded gas absorption cell, the vacuum pumps, as well as the TX and RX are placed on a portable breadboard with dimensions of 75 cm x 45 cm. The system performance is evaluated by high-resolution absorption spectra of gaseous methanol at 13 Pa for 241 - 242 GHz. The 2f (second harmonic) content of the absorption spectrum of the methanol was obtained by detecting the IF power of RX using a diode power sensor connected to a lock-in amplifier. The reference frequency modulation reveals a higher SNR (signal-noise-ratio) of 98 within 32 s acquisition compared to 66 for FSK. The setup allows for jumping to preselected frequency regions according to the spectral signature thus reducing the acquisition time by up to one order of magnitude.

  9. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    International Nuclear Information System (INIS)

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  10. SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

    Science.gov (United States)

    Curry, Matthew; Carr, Stephen; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm

    2014-03-01

    Single-shot read-out of a donor spin can be performed using the response of a single-electron-transistor (SET). This technique can produce relatively large changes in current, on the order of 1 (nA), to distinguish between the spin states. Despite the relatively large signal, the read-out time resolution has been limited to approximately 100 (kHz) of bandwidth because of noise. Cryogenic pre-amplification has been shown to extend the response of certain detection circuits to shorter time resolution and thus higher bandwidth. We examine a SiGe HBT circuit configuration for cryogenic preamplification, which has potential advantages over commonly used HEMT configurations. Here we present 4 (K) measurements of a circuit consisting of a Silicon-SET inline with a Heterojunction-Bipolar-Transistor (HBT). We compare the measured bandwidth with and without the HBT inline and find that at higher frequencies the signal-to-noise-ratio (SNR) with the HBT inline exceeds the SNR without the HBT inline. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  11. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  12. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter

    CERN Document Server

    Dressnandt, N; Rescia, S; Vernon, E

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (sLHC). IBM’s 8WL 130nm SiGe process was chosen for it’s radiation tolerance, low noise bipolar NPN devices, wide voltage rand and potential use in other sLHC detector subsystems. Although the requirements for the final design can not be set at this time, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamp followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier doublet with a common...

  13. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr

    CERN Document Server

    Rescia, S; Newcomer, F M; Dressnandt, N

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper with a (RC)2 – CR response to replace the existing ATLAS Liquid Argon readout for use at SLHC. IBM’s 8WL 130nm SiGe process was chosen for its radiation tolerance wide voltage range and potential for use in other LHC detector subsystems. The required dynamic range of 15 bits is accomplished by utilization of a single stage, low noise, wide dynamic range preamp connected to a dual range shaper. The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. With this gain the equivalent input voltage noise requirement on the shaper to about 2.2nV/ √Hz. Each shaper stage is designed as a cascaded differential op amp doublet with a common mode operating point regulated by an internal feedback loop. The shaper outputs are designed to be compatible with the 130nm CMOS ADC being develo...

  14. Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Tianzhuo Zhan

    2015-04-01

    Full Text Available In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for two simulation cells of different sizes. The resulting thermal boundary resistance decreased with increasing temperature. The thermal boundary resistance was smaller for the large cell than for the small cell. Furthermore, the MD-predicted values were lower than the diffusion mismatch model (DMM-predicted values. The phonon density of states (DOS was calculated for all the cases to examine the underlying nature of the temperature dependence and size effect of thermal boundary resistance. We found that the phonon DOS was modified in the interface regions. The phonon DOS better matched between Si and Ge in the interface region than in the bulk region. Furthermore, in interface Si, the population of low-frequency phonons was found to increase with increasing temperature and cell size. We suggest that the increasing population of low-frequency phonons increased the phonon transmission coefficient at the interface, leading to the temperature dependence and size effect on thermal boundary resistance.

  15. Practice guidelines on the use of esophageal manometry - A GISMAD-SIGE-AIGO medical position statement.

    Science.gov (United States)

    Savarino, Edoardo; de Bortoli, Nicola; Bellini, Massimo; Galeazzi, Francesca; Ribolsi, Mentore; Salvador, Renato; Savarino, Vincenzo; Penagini, Roberto

    2016-10-01

    Patients with esophageal symptoms potentially associated to esophageal motor disorders such as dysphagia, chest pain, heartburn and regurgitation, represent one of the most frequent reasons for referral to gastroenterological evaluation. The utility of esophageal manometry in clinical practice is: (1) to accurately define esophageal motor function, (2) to identify abnormal motor function, and (3) to establish a treatment plan based on motor abnormalities. With this in mind, in the last decade, investigations and technical advances, with the introduction of high-resolution esophageal manometry, have enhanced our understanding and management of esophageal motility disorders. The following recommendations were developed to assist physicians in the appropriate use of esophageal manometry in modern patient care. They were discussed and approved after a comprehensive review of the medical literature pertaining to manometric techniques and their recent application. This position statement created under the auspices of the Gruppo Italiano di Studio per la Motilità dell'Apparato Digerente (GISMAD), Società Italiana di Gastroenterologia ed Endoscopia Digestiva (SIGE) and Associazione Italiana Gastroenterologi ed Endoscopisti Digestivi Ospedalieri (AIGO) is intended to help clinicians in applying manometric studies in the most fruitful manner within the context of their patients with esophageal symptoms. Copyright © 2016 Editrice Gastroenterologica Italiana S.r.l. Published by Elsevier Ltd. All rights reserved.

  16. Dynamical scaling and crossover from algebraic to logarithmic growth in dilute systems

    DEFF Research Database (Denmark)

    Mouritsen, Ole G.; Shah, Peter Jivan

    1989-01-01

    The ordering dynamics of the two-dimensional Ising antiferromagnet with mobile vacancies and nonconserved order parameter is studied by Monte Carlo temperature-quenching experiments. The domain-size distribution function is shown to obey dynamical scaling. A crossover is found from an algebraic...... growth law for the pure system to effectively logarithmic growth behavior in the dilute system, in accordance with recent experiments on ordering kinetics in impure chemisorbed overlayers and off-stoichiometric alloys....

  17. A cluster-bethe-lattice approach to spin-waves in dilute ferromagnets

    International Nuclear Information System (INIS)

    Salzberg, J.B.; Silva, C.E.T.G. da; Falicov, L.M.

    1975-01-01

    The spin-wave spectra of a dilute ferromagnet within the cluster-bethe-lattice approximation is studied. Short range order effects for the alloy are included. A study of finite size clusters connected at their edges to Bethe lattices of the same coordination number allows one to determine:(i) the stability condition for the magnetic system; (ii) the continuum spin-wave local density of states and (iii) the existence of localized states below and above the continuum states

  18. Dynamics of dilute polymer solutions

    International Nuclear Information System (INIS)

    Nicholson, L.K.; Higgins, J.S.

    1980-01-01

    Neutrons scattered by nuclei undergoing slow motion e.g. the internal motion within polymer chains, lose or gain very small amounts of energy. It is therefore the quasi-elastic region of the neutron scattering spectrum which is of interest and in particular the time correlation function (or intermediate scattering law S(Q,t)) which is ideally required to define the motion. The neutron spin echo spectrometer (IN11) at the ILL facilitates the measurement of very small energy changes (down to 10 neV) on scattering from a sample, by changing and keeping track of neutron beam polarization non-parallel to the magnetic guide-field (1). The resultant neutron beam polarization, when normalized against a standard (totally elastic) scatterer is directly proportional to the cosine Fourier Transform of the scattering law S(Q,ω), which is to say the time correlation function is measured directly. Dilute solutions of deuterated polystyrene (PSD) and deuterated polytetrahydrofuran (PTDF) in carbon disulphide, and of their hydrogeneous counterparts (PSH and PTHF respectively) in deuterated benzene were investigated in the range 0.027 A -1 -1 , at 30 0 C. (orig./FKS)

  19. Storm Sewage Dilution in Smaller Streams

    DEFF Research Database (Denmark)

    Larsen, Torben; Vestergaard, Kristian

    1987-01-01

    A numerical model has been used to show how dilution in smaller streams can be effected by unsteady hydraulic conditions caused by a storm sewage overflow.......A numerical model has been used to show how dilution in smaller streams can be effected by unsteady hydraulic conditions caused by a storm sewage overflow....

  20. Cost effectiveness of dilute chemical decontamination

    International Nuclear Information System (INIS)

    LeSurf, J.E.; Weyman, G.D.

    The basic principles of dilute chemical decontamination are described, as well as the method of application. Methods of computing savings in radiation dose and costs are presented, with results from actual experience and illustrative examples. It is concluded that dilute chemical decontamination is beneficial in many cases. It reduces radiation exposure of workers, saves money, and simplifies maintenance work

  1. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    International Nuclear Information System (INIS)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  2. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006 (India); Cressler, J. D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30332, GA (United States)

    2016-05-23

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h{sub FE} of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  3. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    International Nuclear Information System (INIS)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana; Cressler, J. D.

    2016-01-01

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h_F_E of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  4. VANADIUM ALLOYS

    Science.gov (United States)

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  5. Characterization and structure of precipitates in 6xxx Aluminium Alloys

    International Nuclear Information System (INIS)

    Holmestad, Randi; Bjørge, Ruben; Ehlers, Flemming J H; Torsæter, Malin; Marioara, Calin D; Andersen, Sigmund J

    2012-01-01

    Solute atom nanoscale precipitates are responsible for the favourable mechanical properties of heat treatable aluminium alloys such as Al-Mg-Si (6xxx). The shape, structure and strengthening properties of age-hardening precipitates depend on alloy composition and thermo-mechanical history. We seek an improved understanding of the physics related to nucleation and precipitation on the atomistic level in these alloys. Once these mechanisms are sufficiently well described and understood, the hope is that 'alloy design' simulations can assist tailoring of materials with desired properties. In pure Al-Mg-Si we have determined the structure of nearly all the known metastable precipitate phases, by combining advanced TEM techniques (such as high resolution TEM and nano-beam diffraction) with atom probe tomography and density functional theory. We are now studying effects of additions /substitutions of Cu, Ag and/or Ge that promote formation of more disordered precipitates, employing aberration corrected high angle annular dark field scanning TEM. We find that all metastable precipitates contain variations of a widely spaced 'Si/Ge network'. In spite of disorder or defects, this network is surprisingly well ordered, with hexagonal projected sub-cell dimensions a = b ≅ 0.4 nm and c (along the fully coherent precipitate main growth direction) equal to 0.405 nm or a multiple of it.

  6. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  7. Alternative Sigma Factors SigF, SigE, and SigG Are Essential for Sporulation in Clostridium botulinum ATCC 3502

    OpenAIRE

    Kirk, David G.; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

    2014-01-01

    Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcription...

  8. A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

    OpenAIRE

    Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

    2017-01-01

    A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...

  9. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  10. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  11. Nonswelling alloy

    Science.gov (United States)

    Harkness, S.D.

    1975-12-23

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses.

  12. Nonswelling alloy

    International Nuclear Information System (INIS)

    Harkness, S.D.

    1975-01-01

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses

  13. Theoretical modeling of diluted antiferromagnetic systems

    International Nuclear Information System (INIS)

    Pozo, J; Elgueta, R; Acevedo, R

    2000-01-01

    Some magnetic properties of a Diluted Antiferromagnetic System (DAFS) are studied. The model of the two sub-networks for antiferromagnetism is used and a Heisenberg Hamiltonian type is proposed, where the square operators are expressed in terms of boson operators with the approach of spin waves. The behavior of the diluted system's fundamental state depends basically on the competition effect between the anisotropy field and the Weiss molecular field. The approach used allows the diluted system to be worked for strong anisotropies as well as when these are very weak

  14. Structural and electronic properties of Si{sub 1–x}Ge{sub x} alloy nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Iori, Federico [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); European Theoretical Spectroscopy Facility (ETSF) and Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain); Ossicini, Stefano [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); “Centro S3”, CNR-Istituto di Nanoscienze, Via Campi 213/A, 41125 Modena (Italy); Rurali, Riccardo, E-mail: rrurali@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

    2014-10-21

    We present first-principles density-functional calculations of Si{sub 1–x}Ge{sub x} alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

  15. Viscosity of Ga-Li liquid alloys

    Science.gov (United States)

    Vidyaev, Dmitriy; Boretsky, Evgeny; Verkhorubov, Dmitriy

    2018-03-01

    The measurement of dynamic viscosity of Ga-Li liquid alloys has been performed using low-frequency vibrational viscometer at five temperatures in the range 313-353 K and four gallium-based dilute alloy compositions containing 0-1.15 at.% Li. It was found that the viscosity of the considered alloys increases with decreasing temperature and increasing lithium concentration in the above ranges. It was shown that dependence of the viscosity of Ga-Li alloys in the investigated temperature range has been described by Arrhenius equation. For this equation the activation energy of viscous flow and pre-exponential factor were calculated. This study helped to determine the conditions of the alkali metals separating process in gallam-exchange systems.

  16. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  17. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

    International Nuclear Information System (INIS)

    Peng Xihong; Tang Fu; Logan, Paul

    2011-01-01

    Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

  18. Gluconeogenesis from labeled carbon: estimating isotope dilution

    International Nuclear Information System (INIS)

    Kelleher, J.K.

    1986-01-01

    To estimate the rate of gluconeogenesis from steady-state incorporation of labeled 3-carbon precursors into glucose, isotope dilution must be considered so that the rate of labeling of glucose can be quantitatively converted to the rate of gluconeogenesis. An expression for the value of this isotope dilution can be derived using mathematical techniques and a model of the tricarboxylic acid (TCA) cycle. The present investigation employs a more complex model than that used in previous studies. This model includes the following pathways that may affect the correction for isotope dilution: 1) flux of 3-carbon precursor to the oxaloacetate pool via acetyl-CoA and the TCA cycle; 2) flux of 4- or 5-carbon compounds into the TCA cycle; 3) reversible flux between oxaloacetate (OAA) and pyruvate and between OAA and fumarate; 4) incomplete equilibrium between OAA pools; and 5) isotope dilution of 3-carbon tracers between the experimentally measured pool and the precursor for the TCA-cycle OAA pool. Experimental tests are outlined which investigators can use to determine whether these pathways are significant in a specific steady-state system. The study indicated that flux through these five pathways can significantly affect the correction for isotope dilution. To correct for the effects of these pathways an alternative method for calculating isotope dilution is proposed using citrate to relate the specific activities of acetyl-CoA and OAA

  19. Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nano wires for Biochemical Sensors

    International Nuclear Information System (INIS)

    Chang, K.; Chen, C.; Kuo, P.; Chen, Y.; Chang, T.; Lai, C.; Whang, A. J.; Lai, Y.; Chen, H.; Hsieh, I.

    2014-01-01

    Nano wires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nano wires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Pre oxidation treatment also improved the sensitivity of SiGe nano wires because the Si-F binding was held at a more stable interface state compared to bare nano wire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N 2 plasma posttreatment or the low-temperature post annealing due to the suppression of out diffusion of Ge and F atoms from the SiGe nano wire surface.

  20. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    NARCIS (Netherlands)

    Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

    1999-01-01

    Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when

  1. Electrical Resistance Alloys and Low-Expansion Alloys

    DEFF Research Database (Denmark)

    Kjer, Torben

    1996-01-01

    The article gives an overview of electrical resistance alloys and alloys with low thermal expansion. The electrical resistance alloys comprise resistance alloys, heating alloys and thermostat alloys. The low expansion alloys comprise alloys with very low expansion coefficients, alloys with very low...... thermoelastic coefficients and age hardenable low expansion alloys....

  2. Irradiation Stability of Uranium Alloys at High Exposures

    International Nuclear Information System (INIS)

    McDonell, W.R.

    2001-01-01

    Postirradiation examinations were begun of a series of unrestrained dilute uranium alloy specimens irradiated to exposures up to 13,000 MWD/T in NaK-containing stainless steel capsules. This test, part of a program of development of uranium metal fuels for desalination and power reactors sponsored by the Division of Reactor Development and Technology, has the objective of defining the temperature and exposure limits of swelling resistance of the alloyed uranium. This paper discusses those test results

  3. Alloys of nickel-iron and nickel-silicon do not swell under fast neutron irradiation

    International Nuclear Information System (INIS)

    Silvestre, G.; Silvent, A.; Regnard, C.; Sainfort, G.

    1975-01-01

    This research is concerned with the effect of fast-neutron irradiation on the swelling of nickel and nickel alloys. Ni-Fe (0-60at%Fe) and Ni-Si (0-8at%Si) were studied, and the fluences were in the range 10 20 -4.3x10 22 n/cm 2 . In dilute alloys, the added elements are dissolved and reduce swelling, silicon being particularly effective. In more concentrated alloys, irradiation of Ni-Fe and Ni-Si alloys brings about the formation of plate-shaped precipitates of Ni 3 X and these alloys do not swell. (Auth.)

  4. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Science.gov (United States)

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  5. Charge-density-shear-moduli relationships in aluminum-lithium alloys.

    Science.gov (United States)

    Eberhart, M

    2001-11-12

    Using the first principles full-potential linear-augmented-Slater-type orbital technique, the energies and charge densities of aluminum and aluminum-lithium supercells have been computed. The experimentally observed increase in aluminum's shear moduli upon alloying with lithium is argued to be the result of predictable changes to aluminum's total charge density, suggesting that simple rules may allow the alloy designer to predict the effects of dilute substitutional elements on alloy elastic response.

  6. Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

    Science.gov (United States)

    Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

    2015-08-01

    The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

  7. Composite systems of dilute and dense couplings

    International Nuclear Information System (INIS)

    Raymond, J R; Saad, D

    2008-01-01

    Composite systems, where couplings are of two types, a combination of strong dilute and weak dense couplings of Ising spins, are examined through the replica method. The dilute and dense parts are considered to have independent canonical disordered or uniform bond distributions; mixing the models by variation of a parameter γ alongside inverse temperature β we analyse the respective thermodynamic solutions. We describe the variation in high temperature transitions as mixing occurs; in the vicinity of these transitions we exactly analyse the competing effects of the dense and sparse models. By using the replica symmetric ansatz and population dynamics we described the low temperature behaviour of mixed systems

  8. Computer automation of a dilution cryogenic system

    International Nuclear Information System (INIS)

    Nogues, C.

    1992-09-01

    This study has been realized in the framework of studies on developing new technic for low temperature detectors for neutrinos and dark matter. The principles of low temperature physics and helium 4 and dilution cryostats, are first reviewed. The cryogenic system used and the technic for low temperature thermometry and regulation systems are then described. The computer automation of the dilution cryogenic system involves: numerical measurement of the parameter set (pressure, temperature, flow rate); computer assisted operating of the cryostat and the pump bench; numerical regulation of pressure and temperature; operation sequence full automation allowing the system to evolve from a state to another (temperature descent for example)

  9. Interaction Studies of Dilute Aqueous Oxalic Acid

    Directory of Open Access Journals (Sweden)

    Kiran Kandpal

    2007-01-01

    Full Text Available Molecular conductance λm, relative viscosity and density of oxalicacid at different concentration in dilute aqueous solution were measured at 293 K.The conductance data were used to calculate the value association constant.Viscosity and density data were used to calculate the A and B coefficient ofJone-Dole equation and apparent molar volume respectively. The viscosityresults were utilized for the applicability of Modified Jone-Dole equation andStaurdinger equations. Mono oxalate anion acts, as structure maker and thesolute-solvent interaction were present in the dilute aqueous oxalic acid.

  10. Dilution refrigeration with multiple mixing chambers

    International Nuclear Information System (INIS)

    Coops, G.M.

    1981-01-01

    A dilution refrigerator is an instrument to reach temperatures in the mK region in a continuous way. The temperature range can be extended and the cooling power can be enlarged by adding an extra mixing chamber. In this way we obtain a double mixing chamber system. In this thesis the theory of the multiple mixing chamber is presented and tested on its validity by comparison with the measurements. Measurements on a dilution refrigerator with a circulation rate up to 2.5 mmol/s are also reported. (Auth.)

  11. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  12. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  13. The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

    International Nuclear Information System (INIS)

    Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

    1990-01-01

    Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

  14. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

    International Nuclear Information System (INIS)

    Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

    2017-01-01

    In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)

  15. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

    2010-04-15

    The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6 (Canada)

    2010-03-15

    Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Development of melt dilute technology for disposition of aluminum based spent nuclear fuel

    Energy Technology Data Exchange (ETDEWEB)

    Swift, W.F. [Nuclear Material Management Division Westinghouse Savannah River Company, Savannah River Site Building 707-C, Aiken, SC 29808 (United States)

    2002-07-01

    The US Department of Energy (DOE) has for many years had a program for receipt and disposition of spent nuclear fuels of US origin from research reactors around the world. The research reactor spent nuclear fuel that consists of aluminum alloy composition has historically been returned to the Savannah River Site (SRS) and dispositioned via chemical reprocessing. In 1995, the DOE evaluated a number of alternatives to chemical reprocessing. In 2000, the DOE selected the melt-dilute alternative as the primary disposition path and direct disposal as the backup path. The melt-dilute technology has been developed from lab-scale demonstration up through the construction of a pilot-scale facility. The pilot-scale L-Area Experimental Facility (LEF) has been constructed and is ready for operation. The LEF will be used primarily, to confirm laboratory research on zeolite media for off- gas trapping and remote operability. Favorable results from the LEF are expected to lead to final design of the production melt-dilute facility identified as the Treatment and Storage Facility (TSF). This paper will describe the melt-dilute process and provide a status of the program development. (author)

  18. Development of melt dilute technology for disposition of aluminum based spent nuclear fuel

    International Nuclear Information System (INIS)

    Swift, W.F.

    2002-01-01

    The US Department of Energy (DOE) has for many years had a program for receipt and disposition of spent nuclear fuels of US origin from research reactors around the world. The research reactor spent nuclear fuel that consists of aluminum alloy composition has historically been returned to the Savannah River Site (SRS) and dispositioned via chemical reprocessing. In 1995, the DOE evaluated a number of alternatives to chemical reprocessing. In 2000, the DOE selected the melt-dilute alternative as the primary disposition path and direct disposal as the backup path. The melt-dilute technology has been developed from lab-scale demonstration up through the construction of a pilot-scale facility. The pilot-scale L-Area Experimental Facility (LEF) has been constructed and is ready for operation. The LEF will be used primarily, to confirm laboratory research on zeolite media for off- gas trapping and remote operability. Favorable results from the LEF are expected to lead to final design of the production melt-dilute facility identified as the Treatment and Storage Facility (TSF). This paper will describe the melt-dilute process and provide a status of the program development. (author)

  19. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  20. Point defects in dilute nitride III-N-As and III-N-P

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2006-01-01

    We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

  1. Superconducting alloys

    International Nuclear Information System (INIS)

    Bowers, J.E.

    1976-01-01

    Reference is made to superconductors having high critical currents. The superconductor described comprises an alloy consisting of a matrix of a Type II superconductor which is a homogeneous mixture of 50 to 95 at.% Pb and 5 to 40 at.%Bi and/or 10 to 50 at.%In. Dispersed in the matrix is a material to provide pinning centres comprising from 0.01% to 20% by volume of the alloy; this material is a stable discontinuous phase of discrete crystalline particles of Cu, Mn, Te, Se, Ni, Ca, Cr, Ce, Ge or La, either in the form of the element or a compound with a component of the matrix. These particles should have an average diameter of not more than 2μ. A method for making this alloy is described. (U.K.)

  2. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  3. Quantifying dilution caused by execution efficiency

    Directory of Open Access Journals (Sweden)

    Taís Renata Câmara

    Full Text Available Abstract In open pit mining, dilution is not always a factor systematically analyzed and calculated. Often it is only an adjusted number, for example, calculated or even empirically determined for a certain operational condition perpetuating along time in the form of a constant applied to calculating reserves or mine planning in attendance of audit requirements. Dilution and loss are factors that should be always considered for tonnage and grade estimates. These factors are always associated and can be determined considering several particularities of the deposit and the operation itself. In this study, a methodology was determined to identify blocks adjacent to the blocks previously planned to be mined. Thus, it is possible to estimate the dilution caused by poor operating efficiency, taking into account the inability of the equipment to perfectly remove each block, respecting its limits. Mining dilution is defined as the incorporation of waste material to ore due to the operational incapacity to efficiently separate the materials during the mining process, considering the physical processes, and the operating and geometric configurations of the mining with the equipment available.

  4. A century of indicator dilution technique

    DEFF Research Database (Denmark)

    Henriksen, Jens H; Jensen, Gorm B; Larsson, Henrik B W

    2014-01-01

    This review imparts the history and the present status of the indicator dilution technique with quantitative bolus injection. The first report on flow measurement with this technique appeared 100 years ago. In 1928, the use of intravascular dyes made possible a widespread application in animals...

  5. Liquid volumes measurements by isotopic dilution

    International Nuclear Information System (INIS)

    Herrera M, J.M.

    1981-01-01

    By the nuclear technique, isotopic dilution industrial liquid volumes may be measured in large size recipients of irregular shapes using radiotracers. In the present work laboratory and pilot test are made with 2 radiotracers for optimizing the technique and later done on an industrial scale, obtaining a maximum deviation of +-2%, some recommendations are given to improve the performance of the technique. (author)

  6. Continuous deionization of a dilute nickel solution

    NARCIS (Netherlands)

    Spoor, P.B.; Koene, L.; Veen, ter W.R.; Janssen, L.J.J.

    2002-01-01

    This paper describes the continuous removal of nickel ions from a dilute solution using a hybrid ion-exchange/electrodialysis process. Emphasis was placed on the ionic state of the bed during the process, and the mass balance of ions in the system. Much of this information was obtained by analysing

  7. Dilution kicker for the SPS beam dump

    CERN Multimedia

    1974-01-01

    In order to reduce thermal stress on the SPS dump material, the fast-ejected beam was swept horizontally across the dump. This was done with the "dilution kicker" MKDH, still in use at the time of writing. The person on the left is Manfred Mayer. See also 7404072X.

  8. Magnetic properties of diluted magnetic semiconductors

    NARCIS (Netherlands)

    Jonge, de W.J.M.; Swagten, H.J.M.

    1991-01-01

    A review will be given of the magnetic characteristics of diluted magnetic semiconductors and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds will be considered. The relevance of the long-range interaction and the role of the carrier concentration will be

  9. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  10. Magnetic properties of Fe–Al for quenched diluted spin-1 Ising model

    International Nuclear Information System (INIS)

    Freitas, A.S.; Albuquerque, Douglas F. de; Fittipaldi, I.P.; Moreno, N.O.

    2014-01-01

    We study the phase diagram of Fe 1−q Al q alloys via the quenched site diluted spin-1 ferromagnetic Ising model by employing effective field theory. One suggests a new approach to exchange interaction between nearest neighbors of Fe that depends on the powers of the Al (q) instead of the linear dependence proposed in other papers. In such model we propose the same kind of the exchange interaction in which the iron–nickel alloys obtain an excellent theoretical description of the experimental data of the T–q phase diagram for all Al concentration q. - Highlights: • We apply the quenched Ising model spin-1 to study the properties of Fe–Al. • We employ the EFT and suggest a new approach to ferromagnetic coupling. • The new probability distribution is considered. • The phase diagram is obtained for all values of q in T–q plane

  11. Magnetic properties of Fe–Al for quenched diluted spin-1 Ising model

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, A.S. [Departamento de Física, Universidade Federal de Sergipe, 49100-000, São Cristovão, SE (Brazil); Coordenadoria de Física, Instituto Federal de Sergipe, 49400-000 Lagarto, SE (Brazil); Albuquerque, Douglas F. de, E-mail: douglas@ufs.br [Departamento de Física, Universidade Federal de Sergipe, 49100-000, São Cristovão, SE (Brazil); Departamento de Matemática, Universidade Federal de Sergipe, 49100-000, São Cristovão, SE (Brazil); Fittipaldi, I.P. [Representação Regional do Ministério da Ciência, Tecnologia e Inovação no Nordeste - ReNE, 50740-540 Recife, PE (Brazil); Moreno, N.O. [Departamento de Física, Universidade Federal de Sergipe, 49100-000, São Cristovão, SE (Brazil)

    2014-08-01

    We study the phase diagram of Fe{sub 1−q}Al{sub q} alloys via the quenched site diluted spin-1 ferromagnetic Ising model by employing effective field theory. One suggests a new approach to exchange interaction between nearest neighbors of Fe that depends on the powers of the Al (q) instead of the linear dependence proposed in other papers. In such model we propose the same kind of the exchange interaction in which the iron–nickel alloys obtain an excellent theoretical description of the experimental data of the T–q phase diagram for all Al concentration q. - Highlights: • We apply the quenched Ising model spin-1 to study the properties of Fe–Al. • We employ the EFT and suggest a new approach to ferromagnetic coupling. • The new probability distribution is considered. • The phase diagram is obtained for all values of q in T–q plane.

  12. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

    International Nuclear Information System (INIS)

    Kim, Tae-Hyun; Park, Jea-Gun

    2013-01-01

    We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)

  13. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  14. Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

    International Nuclear Information System (INIS)

    Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

    2004-01-01

    Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

  15. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

    Science.gov (United States)

    Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

    2012-09-07

    We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

  16. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  17. EXAFS of dilute systems: fluorescence detection

    International Nuclear Information System (INIS)

    Hastings, J.B.

    1979-01-01

    Since the first observations of the variation of the absorption coefficient for x-rays above the energy thresholds in the thirties until the early seventies, measurements and analysis of these variations were merely intended for the understanding of the underlying physics. Recently, with the understanding of the information available about the local atomic structure in the neighborhood of the absorbing species and the availability of high intensity synchrotron radiation sources, EXAFS has become a powerful structural tool. In these discussions, the details of the measurements for very dilute species are presented. It is shown that for the more dilute systems the measurement of the emission rather than the direct absorption is a more favorable technique

  18. Phase diagrams of diluted transverse Ising nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Bouhou, S.; Essaoudi, I. [Laboratoire de Physique des Matériaux et Modélisation, des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes (Morocco); Ainane, A., E-mail: ainane@pks.mpg.de [Laboratoire de Physique des Matériaux et Modélisation, des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes (Morocco); Max-Planck-Institut für Physik Complexer Systeme, Nöthnitzer Str. 38 D-01187 Dresden (Germany); Saber, M. [Laboratoire de Physique des Matériaux et Modélisation, des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes (Morocco); Max-Planck-Institut für Physik Complexer Systeme, Nöthnitzer Str. 38 D-01187 Dresden (Germany); Ahuja, R. [Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala (Sweden); Dujardin, F. [Laboratoire de Chimie et Physique des Milieux Complexes (LCPMC), Institut de Chimie, Physique et Matériaux (ICPM), 1 Bd. Arago, 57070 Metz (France)

    2013-06-15

    In this paper, the phase diagrams of diluted Ising nanowire consisting of core and surface shell coupling by J{sub cs} exchange interaction are studied using the effective field theory with a probability distribution technique, in the presence of transverse fields in the core and in the surface shell. We find a number of characteristic phenomena. In particular, the effect of concentration c of magnetic atoms, the exchange interaction core/shell, the exchange in surface and the transverse fields in core and in surface shell of phase diagrams are investigated. - Highlights: ► We use the EFT to investigate the phase diagrams of Ising transverse nanowire. ► Ferrimagnetic and ferromagnetic cases are investigated. ► The effects of the dilution and the transverse fields in core and shell are studied. ► Behavior of the transition temperature with the exchange interaction is given.

  19. Phase diagrams of diluted transverse Ising nanowire

    International Nuclear Information System (INIS)

    Bouhou, S.; Essaoudi, I.; Ainane, A.; Saber, M.; Ahuja, R.; Dujardin, F.

    2013-01-01

    In this paper, the phase diagrams of diluted Ising nanowire consisting of core and surface shell coupling by J cs exchange interaction are studied using the effective field theory with a probability distribution technique, in the presence of transverse fields in the core and in the surface shell. We find a number of characteristic phenomena. In particular, the effect of concentration c of magnetic atoms, the exchange interaction core/shell, the exchange in surface and the transverse fields in core and in surface shell of phase diagrams are investigated. - Highlights: ► We use the EFT to investigate the phase diagrams of Ising transverse nanowire. ► Ferrimagnetic and ferromagnetic cases are investigated. ► The effects of the dilution and the transverse fields in core and shell are studied. ► Behavior of the transition temperature with the exchange interaction is given

  20. Isotope dilution analysis of environmental samples

    International Nuclear Information System (INIS)

    Tolgyessy, J.; Lesny, J.; Korenova, Z.; Klas, J.; Klehr, E.H.

    1986-01-01

    Isotope dilution analysis has been used for the determination of several trace elements - especially metals - in a variety of environmental samples, including aerosols, water, soils, biological materials and geological materials. Variations of the basic concept include classical IDA, substoichiometric IDA, and more recently, sub-superequivalence IDA. Each variation has its advantages and limitations. A periodic chart has been used to identify those elements which have been measured in environmental samples using one or more of these methods. (author)

  1. Fractal effects on excitations in diluted ferromagnets

    International Nuclear Information System (INIS)

    Kumar, D.

    1981-08-01

    The low energy spin-wave like excitations in diluted ferromagnets near percolation threshold are studied. For this purpose an explicit use of the fractal model for the backbone of the infinite percolating cluster due to Kirkpatrick is made. Three physical effects are identified, which cause the softening of spin-waves as the percolation point is approached. The importance of fractal effects in the calculation of density of states and the low temperature thermodynamics is pointed out. (author)

  2. Dilution physics modeling: Dissolution/precipitation chemistry

    International Nuclear Information System (INIS)

    Onishi, Y.; Reid, H.C.; Trent, D.S.

    1995-09-01

    This report documents progress made to date on integrating dilution/precipitation chemistry and new physical models into the TEMPEST thermal-hydraulics computer code. Implementation of dissolution/precipitation chemistry models is necessary for predicting nonhomogeneous, time-dependent, physical/chemical behavior of tank wastes with and without a variety of possible engineered remediation and mitigation activities. Such behavior includes chemical reactions, gas retention, solids resuspension, solids dissolution and generation, solids settling/rising, and convective motion of physical and chemical species. Thus this model development is important from the standpoint of predicting the consequences of various engineered activities, such as mitigation by dilution, retrieval, or pretreatment, that can affect safe operations. The integration of a dissolution/precipitation chemistry module allows the various phase species concentrations to enter into the physical calculations that affect the TEMPEST hydrodynamic flow calculations. The yield strength model of non-Newtonian sludge correlates yield to a power function of solids concentration. Likewise, shear stress is concentration-dependent, and the dissolution/precipitation chemistry calculations develop the species concentration evolution that produces fluid flow resistance changes. Dilution of waste with pure water, molar concentrations of sodium hydroxide, and other chemical streams can be analyzed for the reactive species changes and hydrodynamic flow characteristics

  3. Local lattice relaxations in random metallic alloys: Effective tetrahedron model and supercell approach

    DEFF Research Database (Denmark)

    Ruban, Andrei; Simak, S.I.; Shallcross, S.

    2003-01-01

    We present a simple effective tetrahedron model for local lattice relaxation effects in random metallic alloys on simple primitive lattices. A comparison with direct ab initio calculations for supercells representing random Ni0.50Pt0.50 and Cu0.25Au0.75 alloys as well as the dilute limit of Au-ri......-rich CuAu alloys shows that the model yields a quantitatively accurate description of the relaxtion energies in these systems. Finally, we discuss the bond length distribution in random alloys....

  4. Molecular analysis of two mouse dilute locus deletion mutations: Spontaneous dilute lethal20J and radiation-induced dilute prenatal lethal Aa2 alleles

    International Nuclear Information System (INIS)

    Strobel, M.C.; Seperack, P.K.; Copeland, N.G.; Jenkins, N.A.

    1990-01-01

    The dilute (d) coat color locus of mouse chromosome 9 has been identified by more than 200 spontaneous and mutagen-induced recessive mutations. With the advent of molecular probes for this locus, the molecular lesion associated with different dilute alleles can be recognized and precisely defined. In this study, two dilute mutations, dilute-lethal20J (dl20J) and dilute prenatal lethal Aa2, have been examined. Using a dilute locus genomic probe in Southern blot analysis, we detected unique restriction fragments in dl20J and Aa2 DNA. Subsequent analysis of these fragments showed that they represented deletion breakpoint fusion fragments. DNA sequence analysis of each mutation-associated deletion breakpoint fusion fragment suggests that both genomic deletions were generated by nonhomologous recombination events. The spontaneous dl20J mutation is caused by an interstitial deletion that removes a single coding exon of the dilute gene. The correlation between this discrete deletion and the expression of all dilute-associated phenotypes in dl20J homozygotes defines the dl20J mutation as a functional null allele of the dilute gene. The radiation-induced Aa2 allele is a multilocus deletion that, by complementation analysis, affects both the dilute locus and the proximal prenatal lethal-3 (pl-3) functional unit. Molecular analysis of the Aa2 deletion breakpoint fusion fragment has provided access to a previously undefined gene proximal to d. Initial characterization of this new gene suggests that it may represent the genetically defined pl-3 functional unit

  5. Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward J.; Racanelli, Marco

    2013-05-01

    In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz's mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.

  6. Relative volatility of dilute solutions of Rb-Cs system

    International Nuclear Information System (INIS)

    Gromov, P.B.; Izotov, V.P.; Nisel'son, L.A.

    1984-01-01

    Relative volatility of diluted solutions Rb-Cs in the temperature range 650-820 K and pressures 13-200 gPa has been studied. The system Rb-Cs in the range of diluted solutions obeys the Henry law. It is shown, that liquid-vapour equilibrium in diluted solutions of cesium in rubidium is characterized by negative deviation from perfection

  7. Fabrication and Magnetic Properties of Co₂MnAl Heusler Alloys by Mechanical Alloying.

    Science.gov (United States)

    Lee, Chung-Hyo

    2018-02-01

    We have applied mechanical alloying (MA) to produce nanocrystalline Co2MnAl Heusler alloys using a mixture of elemental Co50Mn25Al25 powders. An optimal milling and heat treatment conditions to obtain a Co2MnAl Heusler phase with fine microstructure were investigated by X-ray diffraction, differential scanning calorimeter and vibrating sample magnetometer measurements. α-(Co, Mn, Al) FCC phases coupled with amorphous phase are obtained after 3 hours of MA without any evidence for the formation of Co2MnAl alloys. On the other hand, a Co2MnAl Heusler alloys can be obtained by the heat treatment of all MA samples up to 650 °C. X-ray diffraction result shows that the average grain size of Co2MnAl Heusler alloys prepared by MA for 5 h and heat treatment is in the range of 95 nm. The saturation magnetization of MA powders decreases with MA time due to the magnetic dilution by alloying with nonmagnetic Mn and Al elements. The magnetic hardening due to the reduction of the grain size with ball milling is also observed. However, the saturation magnetization of MA powders after heat treatment increases with MA time and reaches to a maximum value of 105 emu/g after 5 h of MA. It can be also seen that the coercivity of 5 h MA sample annealed at 650 °C is fairly low value of 25 Oe.

  8. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  9. Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

    International Nuclear Information System (INIS)

    Tan, P.H.; Bougeard, D.; Abstreiter, G.; Brunner, K.

    2005-01-01

    We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands with a height of 2 nm and a lateral diameter of about 20 nm. An average biaxial strain of -3.5% within the core regions of islands is determined from the splitting of longitudinal and transversal optical Ge-Ge phonon modes observed in polarized Raman measurements. The absolute mode frequencies further enable analysis of a Ge content of 0.82. The analyzed strain and composition of islands are nearly independent from depths below the sample surface. This indicates well-controlled deposition parameters and negligible intermixing during deposition of subsequent layers. These Raman results are in agreement with x-ray diffraction data. Small, local Raman frequency shifts were observed and discussed with respect to partial elastic strain relaxation of the multilayer stack after cleavage, undefined Raman-scattering geometries at the sample edge, and local heating by the laser probe

  10. Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

    Science.gov (United States)

    England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

    2015-03-01

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  11. Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

    International Nuclear Information System (INIS)

    D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

    2007-01-01

    Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

  12. Polaron in the dilute critical Bose condensate

    Science.gov (United States)

    Pastukhov, Volodymyr

    2018-05-01

    The properties of an impurity immersed in a dilute D-dimensional Bose gas at temperatures close to its second-order phase transition point are considered. Particularly by means of the 1/N-expansion, we calculate the leading-order polaron energy and the damping rate in the limit of vanishing boson–boson interaction. It is shown that the perturbative effective mass and the quasiparticle residue diverge logarithmically in the long-length limit, signalling the non-analytic behavior of the impurity spectrum and pole-free structure of the polaron Green’s function in the infrared region, respectively.

  13. Confluence Model or Resource Dilution Hypothesis?

    DEFF Research Database (Denmark)

    Jæger, Mads

    have a negative effect on educational attainment most studies cannot distinguish empirically between the CM and the RDH. In this paper, I use the different theoretical predictions in the CM and the RDH on the role of cognitive ability as a partial or complete mediator of the sibship size effect......Studies on family background often explain the negative effect of sibship size on educational attainment by one of two theories: the Confluence Model (CM) or the Resource Dilution Hypothesis (RDH). However, as both theories – for substantively different reasons – predict that sibship size should...

  14. Dilute Al and V NMR in α-Ti

    International Nuclear Information System (INIS)

    Chou, L.H.; Rowland, T.J.

    1992-01-01

    We report a nuclear-magnetic-resonance investigation of four titanium alloys: Ti--1 at. % V, Ti--2 at. % V, Ti--1 at. % Al, and Ti--2 at. % Al. Interpretation of the experimental 51 V and 27 Al absorption curves was accomplished largely by comparison with computer-simulated curves. Since the latter include the effects of nuclear-quadrupole and anisotropic Knight-shift interactions, dipolar broadening, and inhomogeneous Knight shift for the V and Al solute nuclei, the comparison yields experimental values for the electric-field gradient, axially symmetric anistropic Knight shift, and isotropic Knight shift, from which we attempt to deduce the local charge distribution at the V or Al atoms in the hcp α-Ti matrix. We find that the localized states on an Al impurity exhibit very little of the character of the host Ti atomic structure. There is no orbital contribution to the Knight shift and the s conduction-electron density at Al sites is small. On the other hand, when vanadium is present as a dilute solute in the Ti lattice, only minor changes in its Knight shift are found. There is a large orbital-shift contribution, and the V nuclear absorption exhibits much the same character as in pure metallic V; there is, however, clear evidence of the V charge distribution assuming the hexagonal symmetry of the Ti lattice. The measured temperature dependences of the anisotropic Knight shift and electric-field-gradient values at V solute sites in Ti are also discussed. On partitioning the field gradient we find that the contribution from local non-s electrons is about two to five times larger in magnitude than the Ti-lattice ion value, a strong indication that the electronic structure near V (but not Al) resembles that of the matrix Ti

  15. Solid solutions of hydrogen in niobium, molybdenum and their alloys

    International Nuclear Information System (INIS)

    Ishikawa, T.T.

    1981-01-01

    The solubility of hydrogen in niobium, molybdenum and niobium-molybdenum alloys with varying atomic fraction of molybdenum from 0.15 to 0.75 was measured on the temperature range of 673 0 K to 1273 0 k for one atmosphere hydrogen pressure. The experimental technique involved the saturation of the solvent metal or alloy with hydrogen, followed by quenching and analysis of the solid solution. The results obtained of hydrogen solubility are consistent with the quasi-regular model for the dilute interstitial solid solutions. The partial molar enthalpy and partial molar entropy in excess of the dissolved hydrogen atoms were calculated from data of solubility versus reciprocal doping temperature. The variation of the relative partial molar enthalpy of hydrogen dissolved in niobium-molybdenum alloys, with the increase of molybdenum content of the alloy was analized. (Author) [pt

  16. Neutron scattering study of dilute supercritical solutions

    International Nuclear Information System (INIS)

    Cochran, H.D.; Wignall, G.D.; Shah, V.M.; Londono, J.D.; Bienkowski, P.R.

    1994-01-01

    Dilute solutions in supercritical solvents exhibit interesting microstructures that are related to their dramatic macroscopic behavior. In typical attractive solutions, solutes are believed to be surrounded by clusters of solvent molecules, and solute molecules are believed to congregate in the vicinity of one another. Repulsive solutions, on the other hand, exhibit a local region of reduced solvent density around the solute with solute-solute congregation. Such microstructures influence solubility, partial molar volume, reaction kinetics, and many other properties. We have undertaken to observe these interesting microstructures directly by neutron scattering experiments on dilute noble gas systems including Ar. The three partial structure factors for such systems and the corresponding pair correlation functions can be determined by using the isotope substitution technique. The systems studied are uniquely suited for our objectives because of the large coherent neutron scattering length of the isotope 36 Ar and because of the accurate potential energy functions that are available for use in molecular simulations and theoretical calculations to be compared with the scattering results. We will describe our experiment, the unique apparatus we have built for it, and the neutron scattering results from our initial allocations of beam time. We will also describe planned scattering experiments to follow those with noble gases, including study of long-chain molecules in supercritical solvents. Such studies will involve hydrocarbon mixtures with and without deuteration to provide contrast

  17. The Statistical Mechanics of Dilute, Disordered Systems

    Science.gov (United States)

    Blackburn, Roger Michael

    Available from UMI in association with The British Library. Requires signed TDF. A graph partitioning problem with variable inter -partition costs is studied by exploiting its mapping on to the Ashkin-Teller spin glass. The cavity method is used to derive the TAP equations and free energy for both extensively connected and dilute systems. Unlike Ising and Potts spin glasses, the self-consistent equation for the distribution of effective fields does not have a solution solely made up of delta functions. Numerical integration is used to find the stable solution, from which the ground state energy is calculated. Simulated annealing is used to test the results. The retrieving activity distribution for networks of boolean functions trained as associative memories for optimal capacity is derived. For infinite networks, outputs are shown to be frozen, in contrast to dilute asymmetric networks trained with the Hebb rule. For finite networks, a steady leaking to the non-retrieving attractor is demonstrated. Simulations of quenched networks are reported which show a departure from this picture: some configurations remain frozen for all time, while others follow cycles of small periods. An estimate of the critical capacity from the simulations is found to be in broad agreement with recent analytical results. The existing theory is extended to include noise on recall, and the behaviour is found to be robust to noise up to order 1/c^2 for networks with connectivity c.

  18. Universal water-dilutable inhibited protective lubricants

    International Nuclear Information System (INIS)

    Mamtseva, M.V.; Kardash, N.V.; Latynina, M.B.

    1993-01-01

    In the interest of environmental protection, improvement of working conditions, and reduced fire hazard in production operations, water-based protective lubricants are now available in a wide assortment, and the production volume has increased greatly. The term water-dilutable inhibited protective lubricants (WDIPL) means water-soluble, water-emulsifiable, or water-dispersible products with the dual function of reducing friction and wear and protecting metal surfaces against corrosion for specified periods of time. According to the standard Unified System of Protection Against Corrosion and Aging (COST 9.103-78), WDIPLs are classed as products for the temporary corrosion protection of metals and end-items. In the general class of WDIPLs one can identify water-dilutable combination corrosion inhibitors, film-forming inhibited petroleum compositions (FIPC-d), detergent-preservative fluids, operational-preservative lubricating-cooling process compounds (ICPC), and, finally, universal multifunctional products. Combined corrosion inhibitors may consist of water-soluble organic and inorganic compounds; water/oil and oil-soluble surfactants - corrosion inhibitors of the chemisorption type or donor and/or acceptor types; shielding inhibitors of the adsorption type; and fast-acting water-displacing components. 23 refs

  19. Capsize of polarization in dilute photonic crystals.

    Science.gov (United States)

    Gevorkian, Zhyrair; Hakhoumian, Arsen; Gasparian, Vladimir; Cuevas, Emilio

    2017-11-29

    We investigate, experimentally and theoretically, polarization rotation effects in dilute photonic crystals with transverse permittivity inhomogeneity perpendicular to the traveling direction of waves. A capsize, namely a drastic change of polarization to the perpendicular direction is observed in a one-dimensional photonic crystal in the frequency range 10 ÷ 140 GHz. To gain more insights into the rotational mechanism, we have developed a theoretical model of dilute photonic crystal, based on Maxwell's equations with a spatially dependent two dimensional inhomogeneous dielectric permittivity. We show that the polarization's rotation can be explained by an optical splitting parameter appearing naturally in Maxwell's equations for magnetic or electric fields components. This parameter is an optical analogous of Rashba like spin-orbit interaction parameter present in quantum waves, introduces a correction to the band structure of the two-dimensional Bloch states, creates the dynamical phase shift between the waves propagating in the orthogonal directions and finally leads to capsizing of the initial polarization. Excellent agreement between theory and experiment is found.

  20. Translating VDM to Alloy

    DEFF Research Database (Denmark)

    Lausdahl, Kenneth

    2013-01-01

    specifications. However, to take advantage of the automated analysis of Alloy, the model-oriented VDM specifications must be translated into a constraint-based Alloy specifications. We describe how a sub- set of VDM can be translated into Alloy and how assertions can be expressed in VDM and checked by the Alloy...

  1. Gibbsian and radiation-induced segregation in Cu--Li and Al--Li alloys

    International Nuclear Information System (INIS)

    Gruen, D.M.; Krauss, A.R.; Susman, S.; Venugopalan, M.; Ron, M.

    1983-01-01

    Previous experiments on segregation in dilute alloys of lithium in aluminum have demonstrated rapid enrichment of lithium in the uppermost monolayer, as well as a slower buildup in the subsurface region as a result of radiation-induced segregation effects during sputtering. Surface and subsurface enrichment of lithium in copper and aluminum alloys has been observed by secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), and x-ray photoemission spectroscopy (XPS). The activation energies for lithium diffusion in Cu and Al have been measured and segregation kinetics are compared for dilute alloys of Li in Cu and Al, and a high lithium content copper alloy. The results are interpreted in terms of both Gibbsian and radiation-induced segregation effects

  2. Dilution and Ferrite Number Prediction in Pulsed Current Cladding of Super-Duplex Stainless Steel Using RSM

    Science.gov (United States)

    Eghlimi, Abbas; Shamanian, Morteza; Raeissi, Keyvan

    2013-12-01

    Super-duplex stainless steels have an excellent combination of mechanical properties and corrosion resistance at relatively low temperatures and can be used as a coating to improve the corrosion and wear resistance of low carbon and low alloy steels. Such coatings can be produced using weld cladding. In this study, pulsed current gas tungsten arc cladding process was utilized to deposit super-duplex stainless steel on high strength low alloy steel substrates. In such claddings, it is essential to understand how the dilution affects the composition and ferrite number of super-duplex stainless steel layer in order to be able to estimate its corrosion resistance and mechanical properties. In the current study, the effect of pulsed current gas tungsten arc cladding process parameters on the dilution and ferrite number of super-duplex stainless steel clad layer was investigated by applying response surface methodology. The validity of the proposed models was investigated by using quadratic regression models and analysis of variance. The results showed an inverse relationship between dilution and ferrite number. They also showed that increasing the heat input decreases the ferrite number. The proposed mathematical models are useful for predicting and controlling the ferrite number within an acceptable range for super-duplex stainless steel cladding.

  3. Newly developed EMF cell with zirconia solid electrolyte for measurement of low oxygen potentials in liquid Cu-Cr and Cu-Zr alloys

    Directory of Open Access Journals (Sweden)

    Katayama I.

    2012-01-01

    Full Text Available In order to measure the very low oxygen potential by use of stabilized zirconia solid electrolyte emf method, a new cell construction was devised. The idea was based on Janke but a zirconia rod was used instead of the zirconia crucible which contacts liquid alloy electrode. The cell was used for determination of the oxygen potentials in liquid dilute Cu-Cr and Cu-Zr alloys. The reference electrode was Cr,Cr2O3. Emf measurements were performed in the temperature range of 1400-1580K and composition range of 0.198-3.10at%Cr-Cu alloys, and 1380-1465K, 0.085-0.761at%Zr-Cu alloys. The composition of liquid alloys were determined by picking up from the liquid alloys and ICP analysis. By use of the newly devised cell construction in this study, stable emf values were obtained at each temperature and alloy composition. Emf values were corrected by using the parameter for electronic contribution of the YSZ. Activity of Cr obeys Henry’s law and activity coefficient at infinitely dilute alloys of Cr in Cu-Cr alloys are: lng0 Cr =(3.80 at 1423K, (3.57 at 1473K, (3.38 at 1523K and (3.20 at 1573K. At 1423 K activity coefficient of Zr at infinitely diluted alloy is lnγo Zr = -4.0.

  4. Study of the thermal and kinetic parameters during directional solidification of zinc-aluminum eutectic alloys

    International Nuclear Information System (INIS)

    Gueijman, Sergio Fabian; Ares, Alicia Esther; Schvezov, Carlos Enrique

    2008-01-01

    Much work has been done recently on investigating zinc-based binary alloys, with different aluminum content, and modified or not with small amounts of other alloying elements. Some of these alloys have interesting properties, such as, the ZA alloys that have properties similar to some bronzes that are used in applications that require pieces with enough resistance to mechanical stresses. The longitudinal thermal gradients, the minimal gradients, the velocities of the liquid interphases, the velocities of the solid interphases and the accelerations of both interphases as a function of time and position were determined for each diluted alloy of the eutectic concentration considered (Zn-5%Al, % in weight), solidified horizontally with caloric extraction from both ends of the test pieces. The values obtained from the horizontal solidification with two directions of predominant caloric extraction are compared to previous values obtained for the same vertically solidified alloy system with a predominantly caloric extraction direction

  5. Spin glass transition in canonical AuFe alloys: A numerical study

    International Nuclear Information System (INIS)

    Zhang, Kai-Cheng; Li, Yong-Feng; Liu, Gui-Bin; Zhu, Yan

    2012-01-01

    Although spin glass transitions have long been observed in diluted magnetic alloys, e.g. AuFe and CuMn alloys, previous numerical studies are not completely consistent with the experiment results. The abnormal critical exponents of the alloys remain still puzzling. By employing parallel tempering algorithm with finite-size scaling analysis, we investigated the phase transitions in canonical AuFe alloys. Our results strongly support that spin glass transitions occur at finite temperatures in the alloys. The calculated critical exponents agree well with those obtained from experiments. -- Highlights: ► By simulation we investigated the abnormal critical exponents observed in canonical SG alloys. ► The critical exponents obtained from our simulations agree well with those measured from experiments. ► Our results strongly support that RKKY interactions lead to SG transitions at finite temperatures.

  6. Absorption of hydrogen by vanadium-palladium alloys

    International Nuclear Information System (INIS)

    Artman, D.; Lynch, J.F.; Flanagan, T.B.

    1976-01-01

    Pressure composition isotherms (273-373 K) have been determined for the absorption of hydrogen by a series of six palladium alloys (f.c.c) in the composition range from 1 to 8 at.% vanadium. At a given hydrogen content, the equilibrium hydrogen pressure progressively increases with vanadium content. Thermodynamic parameters for the absorption of hydrogen are reported at infinite dilution of hydrogen and for the formation of the nonstoichiometric hydride from the hydrogen-saturated alloy. The relative, partial molar enthalpy of solution of hydrogen at infinite dilution increases slightly with vanadium content. The presence of vanadium, which absorbs hydrogen itself in its normal b.c.c. structure, greatly inhibits the ability of palladium to absorb hydrogen. For example, the isobaric solubility of hydrogen (1 atm, 298K) decreases from H/Pd=0.7 (palladium) to 0.024 (V(6%)-Pd). The lattice expansion due to the presence of interstitial hydrogen has been determined by X-ray diffraction. From these data it can be concluded that the formation of two non-stoichiometric hydride phases does not occur at vanadium contents greater that 5 at.% (298 K). Electrical resistance has been measured as a function of the hydrogen content of the alloys. The electrical resistance increases more markedly with hydrogen content for these alloys than for any of the palladium alloys previously examined. (Auth.)

  7. Microstructures and phase transformations in interstitial alloys of tantalum

    International Nuclear Information System (INIS)

    Dahmen, U.

    1979-01-01

    The analysis of microstructures, phases, and possible ordering of interstitial solute atoms is fundamental to an understanding of the properties of metal-interstitial alloys in general. As evidenced by the controversies on phase transformations in the particular system tantalum--carbon, our understanding of this class of alloys is inferior to our knowledge of substitutional metal alloys. An experimental clarification of these controversies in tantalum was made. Using advanced techniques of electron microscopy and ultrahigh vacuum techology, an understanding of the microstructures and phase transformations in dilute interstitial tantalum--carbon alloys is developed. Through a number of control experiments, the role and sources of interstitial contamination in the alloy preparation (and under operating conditions) are revealed. It is demonstrated that all previously published work on the dilute interstitially ordered phase Ta 64 C can be explained consistently in terms of ordering of the interstitial contaminants oxygen and hydrogen, leading to the formation of the phases Ta 12 O and Ta 2 H

  8. Crevice corrosion kinetics of nickel alloys bearing chromium and molybdenum

    International Nuclear Information System (INIS)

    Zadorozne, N.S.; Giordano, C.M.; Rodríguez, M.A.; Carranza, R.M.; Rebak, R.B.

    2012-01-01

    Highlights: ► The crevice corrosion resistance of the tested alloys increased with PREN, which is mainly affected by their Mo content. ► Crevice corrosion kinetics was controlled by ohmic drop only in the more dilute chloride solutions. ► Charge transfer control was observed in concentrated chloride solutions. ► A critical ohmic drop was not necessary for crevice corrosion to occur. ► Ohmic drop was a consequence of the crevice corrosion process in certain conditions. - Abstract: The crevice corrosion kinetics of alloys C-22, C-22HS and HYBRID-BC1 was studied in several chloride solutions at 90 °C. The crevice corrosion resistance of the alloys increased with PREN (Pitting Resistance Equivalent Number), which is mainly affected by the Mo content in the alloys. The crevice corrosion kinetics of the three alloys was analyzed at potentials slightly higher than the repassivation potential. Crevice propagation was controlled by ohmic drop in the more dilute chloride solutions, and by charge transfer in the more concentrated chloride solutions. Ohmic drop was not a necessary condition for crevice corrosion to occur.

  9. Hydrogen in niobium-titanium alloys

    International Nuclear Information System (INIS)

    Silva, J.R.G. da; Cabral, F.A.O.; Florencio, O.

    1985-01-01

    High purity Nb-Ti polycrystalline alloys were doped with hydrogen in equilibrium with the gaseous atmosphere at a pressure of 80 torr. at different temperatures. The partial molar enthalpy and entropy of the hydrogen solution at high dilution, ΔH sup(-) 0 and ΔS sup(-) 0 , were calculated from the equilibrium solubility data. The ΔH sup(-) 0 values are compared with the electron screened proton model of metal-hydrogen solutions. The addition of titanium to niobium has the effect to increase the hydrogen solubility at a given equilibrium temperature. (Author) [pt

  10. Determination of localized magnetic moments in Fe-Cr-Al alloys and the electron structure

    International Nuclear Information System (INIS)

    Blau, W.

    1977-01-01

    The localized magnetic moments of Fe and Cr are determined by combination of saturation magnetization measurements and magnetic diffuse scattering. Power series characterizing the interactions between the different kinds of atoms in the alloys are chosen to describe the concentration dependence of the magnetic moments. The different terms are discussed on the basis of band structure models valid for dilute alloys taking into account their modification by impurity interactions. (author)

  11. A study of the performance of tight-binding models for silicon and silicon-germanium alloys

    Science.gov (United States)

    Roberts, Amanda Killen

    1998-11-01

    resulted in a superior reproduction of a wide variety of physical properties of these systems, which is particularly evident in improved defect formation energies. We have also found that our SiGe model gives a good reproduction of Vegard's law for SiGe alloys containing up to 50% Ge. Given these results, we expect our Si, Ge, and SiGe models to perform well in dynamical studies of dopants and defects.

  12. Alpha-clustering in dilute nucleonic sea

    International Nuclear Information System (INIS)

    Tohsaki, Akihiro

    1999-01-01

    α-clusters are expected to come out here and there in nucleonic sea owing to energetic benefit as its density is diluted. We propose a precise treatment to elucidate α-clusterized process in nucleonic sea after the breakdown of the uniformness. In order to do this, an infinite number of nucleons are considered by taking account of both the Pauli exclusion principle and effective internucleon forces. This method is called a microscopic approach, which has been successful in an α-cluster structure in light nuclei. In particular, we shed light on overcoming difficulties in a static model within the microscopic framework. This improvement is verified by using the empirical value in Weizaecker's mass formula. (author)

  13. Water Metabolism of Walruses by Isotope Dilution

    DEFF Research Database (Denmark)

    Acquarone, M.; Born, E. W.; Chwalibog, A.

    was sampled via an epidural catheter, at regular intervals, for up to seven hours after the initial enrichment to assess isotope equilibration in the body water pools. Five individuals returned to the haul-out after feeding trips of varying duration (158±86 hr, 44-287 hr) where they were immobilized again......In August 2000, the hydrogen isotope dilution method was used on 7 adult male Atlantic walruses (Odobenus rosmarus rosmarus) (weight: 1197±148 kg, mean±SD, range 1013-1508 kg) at a terrestrial haul-out in Northeastern Greenland to determine their body water pool sizes and body water turnover rates....... During immobilization by use of etorphine HCl (reversed with diprenorphine HCl), a first blood sample was taken to measure background isotope levels. The animals were then enriched with deuterium oxide by infusion into the epidural vein. During recovery, while the animals were still on the beach, blood...

  14. Tunnel backfill erosion by dilute water

    Energy Technology Data Exchange (ETDEWEB)

    Olin, M. [VTT Technical Research Centre of Finland, Espoo (Finland)

    2014-03-15

    The goal was to estimate smectite release from tunnel backfill due to dilute groundwater pulse during post glacial conditions. The plan was to apply VTT's two different implementations (BESW{sub D} and BESW{sub S}) of well-known model of Neretnieks et al. (2009). It appeared difficult to produce repeatable results using this model in COMSOL 4.2 environment, therefore a semi-analytical approximate approach was applied, which enabled to take into account both different geometry and smectite content in tunnel backfill as compared to buffer case. The results are quite similar to buffer results due to the decreasing effect of smaller smectite content and the increasing effect of larger radius. (orig.)

  15. Ultrafast magnetization dynamics in diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Morandi, O [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France); Hervieux, P-A; Manfredi, G [Institut de Physique et Chimie des Materiaux de Strasbourg, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: morandi@dipmat.univpm.it

    2009-07-15

    We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second-order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes that restore the initial ferromagnetic order in a nanosecond timescale. In agreement with experimental results, our numerical simulations show that, depending on the value of the initial lattice temperature, a subsequent enhancement of the total magnetization may be observed within the timescale of a few hundred picoseconds.

  16. Mechanisms of urine concentration and dilution (1961)

    International Nuclear Information System (INIS)

    Morel, F.; Guinnebault, M.

    1961-01-01

    This paper is devoted to the analysis of a problem in the field of renal physiology which has shown many new developments during the course of the last few years. The following are treated successively: a) the data obtained from measurements of free water clearance and their interpretation; b) the data provided by nephron morphology and the comparative anatomy of the kidney ; c) the data relative to the existence of an intrarenal osmotic gradient; d) the principle of concentration multiplication by a counter current technique; e) the present day theory of counter current concentration of urine, and f) the physiological check on dilution and concentration mechanisms in urine. Lastly, the advantages of the modern theory and the unknown factors which remain are discussed. (authors) [fr

  17. Tunnel backfill erosion by dilute water

    International Nuclear Information System (INIS)

    Olin, M.

    2014-03-01

    The goal was to estimate smectite release from tunnel backfill due to dilute groundwater pulse during post glacial conditions. The plan was to apply VTT's two different implementations (BESW D and BESW S ) of well-known model of Neretnieks et al. (2009). It appeared difficult to produce repeatable results using this model in COMSOL 4.2 environment, therefore a semi-analytical approximate approach was applied, which enabled to take into account both different geometry and smectite content in tunnel backfill as compared to buffer case. The results are quite similar to buffer results due to the decreasing effect of smaller smectite content and the increasing effect of larger radius. (orig.)

  18. Critical exponents for diluted resistor networks.

    Science.gov (United States)

    Stenull, O; Janssen, H K; Oerding, K

    1999-05-01

    An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent phi up to second order in epsilon=6-d, where d is the spatial dimension. Our result phi=1+epsilon/42+4epsilon(2)/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.

  19. A horizontal dilution refrigerator for polarized target

    International Nuclear Information System (INIS)

    Isagawa, S.; Ishimoto, S.; Masaike, A.; Morimoto, K.

    1978-01-01

    A horizontal dilution refrigerator was constructed with a view to the spin frozen target and the deuteron polarized target. High cooling power at high temperature such as 3.7 mW at 400 mK serves for overcoming a heat load of microwave to polarize the nuclear spins in the target material. The cooling power at 50 mK was 50 μW, which is sufficient to hold the high nuclear polarization for long time. The lowest temperature reached was 26 mK. The refrigerator has rather simple heat exchangers, a long stainless steel double tube heat exchanger and two coaxial type heat exchangers with sintered copper. The mixing chamber is made of polytetrafluoroethylene (TFE) and demountable so that the target material can be easily put into it. (Auth.)

  20. Cost effectiveness of dilute chemical decontamination

    International Nuclear Information System (INIS)

    Le Surf, J.E.; Weyman, G.D.

    1983-01-01

    The origin and basic principles of the dilute chemical decontamination (DCD) concept are described and illustrated by reference to the CAN-DECON process. The estimated dose savings from the actual application of the process at several reactors are presented and discussed. Two methods of performing a cost/benefit appraisal are described and discussed. This methodology requires more study by the nuclear industry, including collection by station staff of relevant data on which future cost/benefit appraisals may be based. Finally, three illustrative cases are examinated to show the breakeven point and potential savings achievable by DCD with different initial radiation fields and different amounts of work to be done. The overall conclusion is that there are many situations in which DCD is desirable to reduce radiation exposure of workers, to save costs to the station, and to ease the performance of maintenance and repair work on reactor systems

  1. Guideline on Isotope Dilution Mass Spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Gaffney, Amy [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-05-19

    Isotope dilution mass spectrometry is used to determine the concentration of an element of interest in a bulk sample. It is a destructive analysis technique that is applicable to a wide range of analytes and bulk sample types. With this method, a known amount of a rare isotope, or ‘spike’, of the element of interest is added to a known amount of sample. The element of interest is chemically purified from the bulk sample, the isotope ratio of the spiked sample is measured by mass spectrometry, and the concentration of the element of interest is calculated from this result. This method is widely used, although a mass spectrometer required for this analysis may be fairly expensive.

  2. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Schiz, F.J.W.

    1999-03-01

    results are explained by the different evolution of defects in as-deposited α-Si and p-Si. The application of fluorine in low thermal budget polysilicon emitters is demonstrated ill a novel self-aligned SiGe heterojunction bipolar transistor concept which is implemented using selective and non-selective epitaxy. The process has the advantage of layer growth ill a single epitaxy step, no growth interfaces in the depletion regions, and oxide isolation as all intrinsic part of the device structure. The device electrical results demonstrate the feasibility of the transistor concept. A detailed analysis of leakage currents is performed and a correlation made with cross-section TEM micrographs. It is shown that E/C leakage is due to punch through at the perimeter of the transistor where the SiGe base is thinner. E/B is explained by the penetration of the E/B depletion region into the extrinsic at the perimeter of the emitter. By directing the extrinsic base implant into single crystal material at the perimeter of the base, both leakage mechanisms can be avoided. (author)

  3. Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada

    Directory of Open Access Journals (Sweden)

    Rodríguez, A.

    2004-04-01

    Full Text Available The hydrogenation of polycrystalline SiGe layers, obtained by solid phase crystallization, by an electron ciclotron resonance hydrogen plasma and the influence of this hydrogenation process on the electrical characteristics of thin film transistors fabricated using this material as active layer have been studied. The hydrogenation processes were carried out at 150 and 250 ºC for several times, up to 11 hours. Infrared transmission spectra of these samples show only the absorption bands corresponding to Si-H bonds, indicating that hydrogen atoms are bonded mainly to silicon atoms. Ultraviolet reflectance measurements show that the surface damage caused by the plasma exposure increases as the Ge content of the film does. The transistors fabricated using polycrystalline SiGe films as active layer show a degradation phenomenon, consisting of a progressive decrease of the drain current at constant gate and drain bias. The degradation slows down as the hydrogenation time increases at constant temperature.

    En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en las características eléctricas de transistores de película delgada fabricados usando dicho material. Los procesos de hidrogenación se realizaron a 150 y 250 ºC, con duraciones de hasta 11 horas. Los espectros de transmitancia en infrarrojo muestran solamente las bandas de absorción características de los enlaces Si-H. Estas bandas indican que el hidrógeno se incorpora al material enlazándose principalmente con los átomos de silicio. Las medidas de reflectancia en el ultravioleta indican que se crea daño en la superficie de la muestra y que éste aumenta a medida que lo hace el contenido en Ge. Los transistores de película delgada con capa activa de SiGe policristalino muestran un fen

  4. Steel alloys

    International Nuclear Information System (INIS)

    Bloom, E.E.; Stiegler, J.O.; Rowcliffe, A.F.; Leitnaker, J.M.

    1977-01-01

    The invention deals with a fuel element for fast breeder reactors. It consits essentially of a uranium oxide, nitride, or carbide or a mixture of these fuels with a plutonium or thorium oxide, nitride, or carbide. The fuel elements are coated with an austenitic stainless steel alloy. Inside the fuel elements, vacancies or small cavities are produced by neutron effects which causes the steel coating to swell. According to the invention, swelling is prevented by a modification of type 304, 316, 321, or 12 K 72HV commercial steels. They consist mainly of Fe, Cr, and Ni in a ratio determined by a temary diagram. They may also contain 1.8 to 2.3% by weight of Mo and a fraction of Si (0.7 to 2% by weight) and Ti(0.10 to 0.5% by weight) to prevent cavity formation. They are structurally modified by cold working. (IHOE) [de

  5. Irradiation induced surface segregation in concentrated alloys: a contribution

    International Nuclear Information System (INIS)

    Grandjean, Y.

    1996-01-01

    A new computer modelization of irradiation induced surface segregation is presented together with some experimental determinations in binary and ternary alloys. The model we propose handles the alloy thermodynamics and kinetics at the same level of sophistication. Diffusion is described at the atomistic level and proceeds vis the jumps of point defects (vacancies, dumb-bell interstitials): the various jump frequencies depend on the local composition in a manner consistent with the thermodynamics of the alloy. For application to specific alloys, we have chosen the simplest statistical approximation: pair interactions in the Bragg Williams approximation. For a system which exhibits the thermodynamics and kinetics features of Ni-Cu alloys, the model generates the behaviour parameters (flux and temperature) and of alloy composition. Quantitative agreement with the published experimental results (two compositions, three temperatures) is obtained with a single set of parameters. Modelling austenitic steels used in nuclear industry requires taking into account the contribution of dumbbells to mass transport. The effects of this latter contribution are studied on a model of Ni-Fe. Interstitial trapping on dilute impurities is shown to delay or even suppress the irradiation induced segregation. Such an effect is indeed observed in the experiments we report on Fe 50 Ni 50 and Fe 49 Ni 50 Hf 1 alloys. (author)

  6. Asymptotic Distribution of Eigenvalues of Weakly Dilute Wishart Matrices

    Energy Technology Data Exchange (ETDEWEB)

    Khorunzhy, A. [Institute for Low Temperature Physics (Ukraine)], E-mail: khorunjy@ilt.kharkov.ua; Rodgers, G. J. [Brunel University, Uxbridge, Department of Mathematics and Statistics (United Kingdom)], E-mail: g.j.rodgers@brunel.ac.uk

    2000-03-15

    We study the eigenvalue distribution of large random matrices that are randomly diluted. We consider two random matrix ensembles that in the pure (nondilute) case have a limiting eigenvalue distribution with a singular component at the origin. These include the Wishart random matrix ensemble and Gaussian random matrices with correlated entries. Our results show that the singularity in the eigenvalue distribution is rather unstable under dilution and that even weak dilution destroys it.

  7. 21 CFR 866.2500 - Microtiter diluting and dispensing device.

    Science.gov (United States)

    2010-04-01

    ... SERVICES (CONTINUED) MEDICAL DEVICES IMMUNOLOGY AND MICROBIOLOGY DEVICES Microbiology Devices § 866.2500... a mechanical device intended for medical purposes to dispense or serially dilute very small...

  8. Dilute acid/metal salt hydrolysis of lignocellulosics

    Science.gov (United States)

    Nguyen, Quang A.; Tucker, Melvin P.

    2002-01-01

    A modified dilute acid method of hydrolyzing the cellulose and hemicellulose in lignocellulosic material under conditions to obtain higher overall fermentable sugar yields than is obtainable using dilute acid alone, comprising: impregnating a lignocellulosic feedstock with a mixture of an amount of aqueous solution of a dilute acid catalyst and a metal salt catalyst sufficient to provide higher overall fermentable sugar yields than is obtainable when hydrolyzing with dilute acid alone; loading the impregnated lignocellulosic feedstock into a reactor and heating for a sufficient period of time to hydrolyze substantially all of the hemicellulose and greater than 45% of the cellulose to water soluble sugars; and recovering the water soluble sugars.

  9. Dilute Surfactant Methods for Carbonate Formations

    Energy Technology Data Exchange (ETDEWEB)

    Kishore K. Mohanty

    2006-02-01

    There are many fractured carbonate reservoirs in US (and the world) with light oil. Waterflooding is effective in fractured reservoirs, if the formation is water-wet. Many fractured carbonate reservoirs, however, are mixed-wet and recoveries with conventional methods are low (less than 10%). The process of using dilute anionic surfactants in alkaline solutions has been investigated in this work for oil recovery from fractured oil-wet carbonate reservoirs both experimentally and numerically. This process is a surfactant-aided gravity drainage where surfactant diffuses into the matrix, lowers IFT and contact angle, which decrease capillary pressure and increase oil relative permeability enabling gravity to drain the oil up. Anionic surfactants have been identified which at dilute concentration of 0.05 wt% and optimal salinity can lower the interfacial tension and change the wettability of the calcite surface to intermediate/water-wet condition as well or better than the cationic surfactant DTAB with a West Texas crude oil. The force of adhesion in AFM of oil-wet regions changes after anionic surfactant treatment to values similar to those of water-wet regions. The AFM topography images showed that the oil-wetting material was removed from the surface by the anionic surfactant treatment. Adsorption studies indicate that the extent of adsorption for anionic surfactants on calcite minerals decreases with increase in pH and with decrease in salinity. Surfactant adsorption can be minimized in the presence of Na{sub 2}CO{sub 3}. Laboratory-scale surfactant brine imbibition experiments give high oil recovery (20-42% OOIP in 50 days; up to 60% in 200 days) for initially oil-wet cores through wettability alteration and IFT reduction. Small (<10%) initial gas saturation does not affect significantly the rate of oil recovery in the imbibition process, but larger gas saturation decreases the oil recovery rate. As the core permeability decreases, the rate of oil recovery reduces

  10. Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

    2010-10-01

    Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

  11. A Physics-Based Engineering Methodology for Calculating Soft Error Rates of Bulk CMOS and SiGe Heterojunction Bipolar Transistor Integrated Circuits

    Science.gov (United States)

    Fulkerson, David E.

    2010-02-01

    This paper describes a new methodology for characterizing the electrical behavior and soft error rate (SER) of CMOS and SiGe HBT integrated circuits that are struck by ions. A typical engineering design problem is to calculate the SER of a critical path that commonly includes several circuits such as an input buffer, several logic gates, logic storage, clock tree circuitry, and an output buffer. Using multiple 3D TCAD simulations to solve this problem is too costly and time-consuming for general engineering use. The new and simple methodology handles the problem with ease by simple SPICE simulations. The methodology accurately predicts the measured threshold linear energy transfer (LET) of a bulk CMOS SRAM. It solves for circuit currents and voltage spikes that are close to those predicted by expensive 3D TCAD simulations. It accurately predicts the measured event cross-section vs. LET curve of an experimental SiGe HBT flip-flop. The experimental cross section vs. frequency behavior and other subtle effects are also accurately predicted.

  12. Hot vacuum extraction-isotopic dilution mass spectrometry for determination of hydrogen isotopes in zircaloys

    International Nuclear Information System (INIS)

    Shi, Y.; Leeson, P.K.; Wilkin, D.; Britton, A.; Macleod, R.

    2016-01-01

    A hot vacuum extraction-isotope dilution mass spectrometry (HVE-IDMS) was studied for determination of hydrogen isotopes in zirconium metal and alloys as nuclear reactor materials. A theoretical assessment of the completeness of the extraction of hydrogen isotopes under the chosen condition was carried out based on the hydrogen and deuterium solubility data for zirconium. The optimal isotopic spiking condition for conventional IDMS was further explored for the special case IDMS where the isotope abundance of the samples is varied and non-natural. Applying the optimal conditions, the accurate IDMS determination was realized. The agreement between the measured values and the certified or prepared values of standard reference materials and homemade standard materials validate the method developed. (author)

  13. Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

    Science.gov (United States)

    Maksimov, A. A.; Yakovlev, D. R.; Debus, J.; Tartakovskii, I. I.; Waag, A.; Karczewski, G.; Wojtowicz, T.; Kossut, J.; Bayer, M.

    2010-07-01

    The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te were studied optically and simulated numerically. In samples with inhomogeneous magnetic ion distribution, these dynamics are contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. A spin-diffusion coefficient of 7×10-8cm2/s was evaluated for Zn0.99Mn0.01Se from comparison of experiment and theory. Calculations of the exciton giant Zeeman splitting and the magnetization dynamics in ordered alloys and digitally grown parabolic quantum wells show perfect agreement with the experimental data. In both structure types, spin diffusion contributes essentially to the magnetization dynamics.

  14. Crystal fields of dilute Tb, Dy, Ho, or Er in Lu obtained by magnetization measurements

    International Nuclear Information System (INIS)

    Touborg, P.; Hog, J.

    1975-01-01

    Magnetization measurements are reported on single crystals of dilute Tb, Dy, Ho, or Er in Lu. These measurements were performed in the temperature range 1.5--100 K and field range 0--6 T and include measurements of initial susceptibility, isothermal and isofield magnetization, and basal-plane anisotropy. The results show features similar to the corresponding Y-R alloys, where R is a rare earth. Crystal-field and molecular-field parameters could be unabiguously deduced from the experimental data. The effects of crystal-field level broadening were investigated and demonstrated for Ho. Comparison of the Y-R and Lu-R results makes possible an estimate of the crystal-field parameters in the pure-rare-earth metals

  15. Alloy Fabrication Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At NETL’s Alloy Fabrication Facility in Albany, OR, researchers conduct DOE research projects to produce new alloys suited to a variety of applications, from gas...

  16. Controlled Thermal Expansion Alloys

    Data.gov (United States)

    National Aeronautics and Space Administration — There has always been a need for controlled thermal expansion alloys suitable for mounting optics and detectors in spacecraft applications.  These alloys help...

  17. Unusual morphology of the omega phase in a Zr-1.75 At. pct Ni alloy

    International Nuclear Information System (INIS)

    Srivastava, D.; Mukhopadhyay, P.; Ramadasan, E.; Banerjee, S.

    1993-01-01

    The observations reported in the present communication were made in the course of a microstructural investigation on dilute Zr-Ni alloys. The alloys were prepared from nuclear-grade sponge zirconium and high-purity nickel by nonconsumable arc melting. Repeated melting was carried out to enhance homogeneity. A master alloy was used in the preparation of very dilute alloys. The observations reported here clearly indicate that the formation of the ω phase on β quenching, can occur in the binary Zr-Ni system at very low solute concentrations, suggesting that nickel is a strong ω stabilizer. Such a situation is known to obtain in the binary Zr-Mo system also. However, the unusual ω morphology observed in the present work has not been reported in the context of dilute Zr-Mo alloys. The appearance of sharp ω reflections and the absence of streaking and diffuse distributions in the selected area electron diffraction (SAD) patterns suggest that the Zr-1.75 at. pct Ni composition lies toward the solute lean end of the composition range associated with the formation of the athermal ω phase in the binary Zr-Ni system. In a more dilute Zr-Ni alloy (Zr-1.30 at. pct Ni), no athermal ω could be observed in β quenched specimens. The absence of streaking is also consistent with the fact that the ω phase in the β quenched Zr-1.75 at. pct Ni alloy did not occur in the form of very fine precipitates. The unusual ω morphology encountered in this work merits further investigation

  18. Dilute antiferromagnetism in magnetically doped phosphorene

    Directory of Open Access Journals (Sweden)

    Andrew Allerdt

    2017-11-01

    Full Text Available We study the competition between Kondo physics and indirect exchange on monolayer black phos-phorous using a realistic description of the band structure in combination with the density matrixrenormalization group (DMRG method. The Hamiltonian is reduced to a one-dimensional problemvia an exact canonical transformation that makes it amenable to DMRG calculations, yielding exactresults that fully incorporate the many-body physics. We find that a perturbative description of theproblem is not appropriate and cannot account for the slow decay of the correlations and the completelack of ferromagnetism. In addition, at some particular distances, the impurities decouple formingtheir own independent Kondo states. This can be predicted from the nodes of the Lindhard function.Our results indicate a possible route toward realizing dilute anti-ferromagnetism in phosphorene. Received: 19 September 2017, Accepted: 12 October 2017; Edited by: K. Hallberg; DOI: http://dx.doi.org/10.4279/PIP.090008 Cite as: A Allerdt, A E Feiguin, Papers in Physics 9, 090008 (2017

  19. Behaviour of humic-bentonite aggregates in diluted suspensions ...

    African Journals Online (AJOL)

    Formation and disaggregation of micron-size aggregates in a diluted suspension made up of HSs and bentonite (B) were studied by tracing distribution of aggregate sizes and their counts in freshly prepared and aged suspensions, and at high (10 000) and low (1.0) [HS]/[B] ratios. Diluted HSB suspensions are unstable ...

  20. Dilution in Transition Zone between Rising Plumes and Surface Plumes

    DEFF Research Database (Denmark)

    Larsen, Torben

    2004-01-01

    The papers presents some physical experiments with the dilution of sea outfall plumes with emphasize on the transition zone where the relative fast flowing vertical plume turns to a horizontal surface plume following the slow sea surface currents. The experiments show that a considerable dilution...

  1. The Melt-Dilute Treatment Technology Offgas Development Status Report

    International Nuclear Information System (INIS)

    Adams, T. M.

    1999-01-01

    The melt-dilute treatment technology is being developed to facilitate the ultimate disposition of highly enriched Al-Base DOE spent nuclear fuels in a geologic repository such as that proposed for Yucca Mountain. The melt-dilute process is a method of preparing DOE spent nuclear fuel for long term storage

  2. Near-wall molecular ordering of dilute ionic liquids

    NARCIS (Netherlands)

    Jitvisate, Monchai; Seddon, James Richard Thorley

    2017-01-01

    The interfacial behavior of ionic liquids promises tunable lubrication as well as playing an integral role in ion diffusion for electron transfer. Diluting the ionic liquids optimizes bulk parameters, such as electric conductivity, and one would expect dilution to disrupt the near-wall molecular

  3. Effect of dietary dilution of energy and nutrients during different ...

    African Journals Online (AJOL)

    A completely randomized design was conducted to evaluate the effect of dietary dilution of energy and nutrients during different growing periods on compensatory growth of Ross broilers. Four replicant pens were assigned per seven treatments. Chicks in each treatment received concentrated and diluted diets in different ...

  4. The dilute random field Ising model by finite cluster approximation

    International Nuclear Information System (INIS)

    Benyoussef, A.; Saber, M.

    1987-09-01

    Using the finite cluster approximation, phase diagrams of bond and site diluted three-dimensional simple cubic Ising models with a random field have been determined. The resulting phase diagrams have the same general features for both bond and site dilution. (author). 7 refs, 4 figs

  5. Enhancement of surface magnetism due to bulk bond dilution

    International Nuclear Information System (INIS)

    Tsallis, C.; Sarmento, E.F.; Albuquerque, E.L. de

    1985-01-01

    Within a renormalization group scheme, the phase diagram of a semi-infinite simple cubic Ising ferromagnet is discussed, with arbitrary surface and bulk coupling constants, and including possible dilution of the bulk bonds. It is obtained that dilution makes easier the appearance of surface magnetism in the absence of bulk magnetism. (Author) [pt

  6. Incorporation of transition metal ions and oxygen generation during anodizing of aluminium alloys

    International Nuclear Information System (INIS)

    Habazaki, H.; Konno, H.; Shimizu, K.; Nagata, S.; Skeldon, P.; Thompson, G.E.

    2004-01-01

    Enrichment of nickel at the alloy/film interface and incorporation of nickel species into the anodic film have been examined for a sputtering-deposited Al-1.2at.%Ni alloy in order to assist understanding of oxygen generation in barrier anodic alumina films. Anodizing of the alloy proceeds in two stages similarly to other dilute aluminium alloys, for example Al-Cr and Al-Cu alloys, where the Gibbs free energies per equivalent for formation of alloying element oxide exceeds the value for alumina. In the first stage, a nickel-free alumina film is formed, with nickel enriching in an alloy layer, 2 nm thick, immediately beneath the anodic oxide film. In the second stage, nickel atoms are oxidized together with aluminium, with oxygen generation forming gas bubbles within the anodic oxide film. This stage commences after accumulation of about 5.4 x 10 15 nickel atoms cm -2 in the enriched alloy layer. Oxygen generation also occurs when a thin layer of the alloy, containing about 2.0 x 10 19 nickel atoms m -2 , on electropolished aluminium, is completely anodized, contrasting with thin Al-Cr and Al-Cu alloy layers on electropolished aluminium, for which oxygen generation is essentially absent. A mechanism of oxygen generation, based on electron impurity levels of amorphous alumina and local oxide compositions, is discussed in order to explain the observations

  7. Electronic structure of alloys

    International Nuclear Information System (INIS)

    Ehrenreich, H.; Schwartz, L.M.

    1976-01-01

    The description of electronic properties of binary substitutional alloys within the single particle approximation is reviewed. Emphasis is placed on a didactic exposition of the equilibrium properties of the transport and magnetic properties of such alloys. Topics covered include: multiple scattering theory; the single band alloy; formal extensions of the theory; the alloy potential; realistic model state densities; the s-d model; and the muffin tin model. 43 figures, 3 tables, 151 references

  8. Dynamic dilution exponent in monodisperse entangled polymer solutions

    DEFF Research Database (Denmark)

    Shahid, T.; Huang, Qian; Oosterlinck, F.

    2017-01-01

    of concentration but also depends on the molar mass of the chains. While the proposed approach successfully explains the viscoelastic properties of a large number of semi-dilute solutions of polymers in their own oligomers, important discrepancies are found for semi-dilute entangled polymers in small-molecule......We study and model the linear viscoelastic properties of several entangled semi-dilute and concentrated solutions of linear chains of different molar masses and at different concentrations dissolved in their oligomers. We discuss the dilution effect of the oligomers on the entangled long chains....... In particular, we investigate the influence of both concentration and molar mass on the value of the effective dynamic dilution exponent determined from the level of the storage plateau at low and intermediate frequencies. We show that the experimental results can be quantitatively explained by considering...

  9. The dilution effect on the extinction of wall diffusion flame

    Directory of Open Access Journals (Sweden)

    Ghiti Nadjib

    2014-12-01

    Full Text Available The dynamic process of the interaction between a turbulent jet diffusion methane flame and a lateral wall was experimentally studied. The evolution of the flame temperature field with the Nitrogen dilution of the methane jet flame was examined. The interaction between the diffusion flame and the lateral wall was investigated for different distance between the wall and the central axes of the jet flame. The dilution is found to play the central role in the flame extinction process. The flame response as the lateral wall approaches from infinity and the increasing of the dilution rate make the flame extinction more rapid than the flame without dilution, when the nitrogen dilution rate increase the flame temperature decrease.

  10. PREDICTION OF THE MIXING ENTHALPIES OF BINARY LIQUID ALLOYS BY MOLECULAR INTERACTION VOLUME MODEL

    Institute of Scientific and Technical Information of China (English)

    H.W.Yang; D.P.Tao; Z.H.Zhou

    2008-01-01

    The mixing enthalpies of 23 binary liquid alloys are calculated by molecular interaction volume model (MIVM), which is a two-parameter model with the partial molar infinite dilute mixing enthalpies. The predicted values are in agreement with the experimental data and then indicate that the model is reliable and convenient.

  11. Dilute Oxygen Combustion Phase I Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Ryan, H.M.; Riley, M.F.; Kobayashi, H.

    1997-10-31

    A novel burner, in which fuel (natural gas) and oxidant (oxygen or air) are separately injected into a furnace, shows promise for achieving very low nitrogen oxide(s) (NOx) emissions for commercial furnace applications. The dilute oxygen combustion (DOC) burner achieves very low NOx through in-furnace dilution of the oxidant stream prior to combustion, resulting in low flame temperatures, thus inhibiting thermal NOx production. The results of a fundamental and applied research effort on the development of the DOC burner are presented. In addition, the results of a market survey detailing the potential commercial impact of the DOC system are disclosed. The fundamental aspects of the burner development project involved examining the flame characteristics of a natural gas turbulent jet in a high-temperature (~1366 K) oxidant (7-27% O2 vol. wet). Specifically, the mass entrainment rate, the flame lift-off height, the velocity field and major species field of the jet were evaluated as a function of surrounding-gas temperature and composition. The measured entrainment rate of the fuel jet decreased with increasing oxygen content in the surrounding high-temperature oxidant, and was well represented by the d+ scaling correlation found in the literature. The measured flame lift-off height decreased with increasing oxygen content and increasing temperature of the surrounding gas. An increase in surrounding-gas oxygen content and/or temperature inhibited the velocity decay within the jet periphery as a function of axial distance as compared to isothermal turbulent jets. However, the velocity measurements were only broadly represented by the d+ scaling correlation. Several DOC burner configurations were tested in a laboratory-scale furnace at a nominal firing rate of 185 kW (~0.63 MMBtu/h). The flue gas composition was recorded as a function of furnace nitrogen content, furnace temperature, burner geometric arrangement, firing rate, and fuel injection velocity. NOx emissions

  12. Dilute oxygen combustion. Phase I report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-10-01

    A novel burner, in which fuel (natural gas) and oxidant (oxygen or air) are separately injected into a furnace, shows promise for achieving very low nitrogen oxide(s) (NO{sub x}) emissions for commercial furnace applications. The dilute oxygen combustion (DOC) burner achieves very low NO{sub x} through in-furnace dilution of the oxidant stream prior to combustion, resulting in low flame temperatures, thus inhibiting thermal NO{sub x} production. The results of a fundamental and applied research effort on the development of the DOC burner are presented. In addition, the results of a market survey detailing the potential commercial impact of the DOC system are disclosed. The fundamental aspects of the burner development project involved examining the flame characteristics of a natural gas turbulent jet in a high-temperature ({approximately}1366 K) oxidant (7-27% O{sub 2} vol. wet). Specifically, the mass entrainment rate, the flame lift-off height, the velocity field and major species field of the jet were evaluated as a function of surrounding-gas temperature and composition. The measured entrainment rate of the fuel jet decreased with increasing oxygen content in the surrounding high-temperature oxidant, and was well represented by the d{sup +} scaling correlation found in the literature. The measured flame lift-off height decreased with increasing oxygen content and increasing temperature of the surrounding gas. An increase in surrounding-gas oxygen content and/or temperature inhibited the velocity decay within the jet periphery as a function of axial distance as compared to isothermal turbulent jets. However, the velocity measurements were only broadly represented by the d{sup +} scaling correlation. Several DOC burner configurations were tested in a laboratory-scale furnace at a nominal firing rate of 185 kW ({approximately}0.63 MMBtu/h). The flue gas composition was recorded as a function of furnace nitrogen content, furnace temperature, burner geometric

  13. Role reductants in dilute chemical decontamination formulations

    Energy Technology Data Exchange (ETDEWEB)

    Ranganathan, S. [Univ. of New Brunswick (Canada). Dept. of Chemical Engineering; Srinivasan, M.P.; Narasimhan, S.V. [Bhabha Atomic Research Centre (BARC), Trombay, Mumbai (India). Water and Steam Chemistry Lab.; Raghavan, P.S. [Madras Christian Coll., Chennai (India); Gopalan, R. [Madras Christian Coll., Chennai (India). Dept. of Chemistry

    2004-10-01

    Iron(III) oxides are the major corrosion products formed in boiling water reactors. The iron(III) oxides are of two types, namely hematite ({alpha}-Fe{sub 2}O{sub 3}) and maghemite ({gamma}-Fe{sub 2}O{sub 3}). The dissolution of these oxides is in no way simple because of the labile nature of the Fe(III)-O bond towards the chelants. The leaching of metal ions is partially controlled by reductive dissolution. In order to understand the role of the reductant, it is essential to study the dissolution behaviour of a system like Fe{sub 2}O{sub 3}, which does not contain any Fe{sup 2+} in the crystal lattice. The present study was carried out with {gamma}-Fe{sub 2}O{sub 3} and dilute chemical decontamination (DCD) formulations containing ascorbic acid and citric acid with the addition of Fe(II)-L as a reductant. The chelants used for the dissolution process were nitrilotriacetic acid, 2,6-pyridinedicorboxylic acid and ethylenediaminetetraacetic acid. The {gamma}-Fe{sub 2}O{sub 3} was chosen since the earlier studies revealed that the dissolution kinetics of {alpha}-Fe{sub 2}O{sub 3} is slow and it is difficult to dissolve even by strong complexing agents, whereas {gamma}-Fe{sub 2}O{sub 3} dissolution is comparatively easier. This is due to the structural difference between these two oxides. The studies also revealed that the dissolution was partly influenced by the nature of the chelating agents but mainly controlled by the power of the reductants used in the formulation. The dissolution behaviour of {gamma}-Fe{sub 2}O{sub 3} under various experimental conditions is discussed and compared with that of magnetite in order to arrive at a suitable mechanism for the dissolution of iron oxides and emphasize the role of reductants in DCD formulations. (orig.)

  14. Ionic liquids behave as dilute electrolyte solutions

    Science.gov (United States)

    Gebbie, Matthew A.; Valtiner, Markus; Banquy, Xavier; Fox, Eric T.; Henderson, Wesley A.; Israelachvili, Jacob N.

    2013-01-01

    We combine direct surface force measurements with thermodynamic arguments to demonstrate that pure ionic liquids are expected to behave as dilute weak electrolyte solutions, with typical effective dissociated ion concentrations of less than 0.1% at room temperature. We performed equilibrium force–distance measurements across the common ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C4mim][NTf2]) using a surface forces apparatus with in situ electrochemical control and quantitatively modeled these measurements using the van der Waals and electrostatic double-layer forces of the Derjaguin–Landau–Verwey–Overbeek theory with an additive repulsive steric (entropic) ion–surface binding force. Our results indicate that ionic liquids screen charged surfaces through the formation of both bound (Stern) and diffuse electric double layers, where the diffuse double layer is comprised of effectively dissociated ionic liquid ions. Additionally, we used the energetics of thermally dissociating ions in a dielectric medium to quantitatively predict the equilibrium for the effective dissociation reaction of [C4mim][NTf2] ions, in excellent agreement with the measured Debye length. Our results clearly demonstrate that, outside of the bound double layer, most of the ions in [C4mim][NTf2] are not effectively dissociated and thus do not contribute to electrostatic screening. We also provide a general, molecular-scale framework for designing ionic liquids with significantly increased dissociated charge densities via judiciously balancing ion pair interactions with bulk dielectric properties. Our results clear up several inconsistencies that have hampered scientific progress in this important area and guide the rational design of unique, high–free-ion density ionic liquids and ionic liquid blends. PMID:23716690

  15. Influence of airborne pollen counts and length of pollen season of selected allergenic plants on the concentration of sIgE antibodies on the population of Bratislava, Slovakia

    Directory of Open Access Journals (Sweden)

    Jana Ščevková

    2015-09-01

    Full Text Available Introduction and objective. The association between airborne pollen counts or duration of pollen season and allergy symptoms is not always distinguished. The purpose of this study was to examine the correlation between pollen exposure (annual total pollen quantity and main pollen season length of selected allergenic plants in the atmosphere of Bratislava, and concentration of allergen-specific immunoglobulin E (sIgE in serum of patients with seasonal allergy during 2002–2003. Materials and methods. The concentration of pollen was monitored by a Burkard volumetric pollen trap. At the same time, 198 pollen allergic patients were testing to determine the values of sIgE antibodies against selected pollen allergens; a panel of 8 purified allergens was used. Results. The highest percentages of sensitization were detected for Poaceae and [i]Ambrosia[/i] pollen allergens. The most abundant airborne pollen types were Urticaceae, [i]Betula[/i], [i]Populus[/i], Fraxinus, Pinus and Poaceae. The length of the pollen season varied. The longest pollen season was that of the [i]Plantago[/i] – 105 days, and the shortest, [i]Corylus[/i] – 20 days. A significant correlation was found between annual total pollen quantity and median sIgE values, especially in 2002. Conclusions. A strong and significant positive correlation was observed between pollen counts, excluding [i]Betula[/i], and sIgE levels in both analysed years. The correlation was weaker and negative in the case of length of pollen season and sIgE values.

  16. High strength alloys

    Science.gov (United States)

    Maziasz, Phillip James [Oak Ridge, TN; Shingledecker, John Paul [Knoxville, TN; Santella, Michael Leonard [Knoxville, TN; Schneibel, Joachim Hugo [Knoxville, TN; Sikka, Vinod Kumar [Oak Ridge, TN; Vinegar, Harold J [Bellaire, TX; John, Randy Carl [Houston, TX; Kim, Dong Sub [Sugar Land, TX

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  17. Biocompatibility of dental alloys

    Energy Technology Data Exchange (ETDEWEB)

    Braemer, W. [Heraeus Kulzer GmbH and Co. KG, Hanau (Germany)

    2001-10-01

    Modern dental alloys have been used for 50 years to produce prosthetic dental restorations. Generally, the crowns and frames of a prosthesis are prepared in dental alloys, and then veneered by feldspar ceramics or composites. In use, the alloys are exposed to the corrosive influence of saliva and bacteria. Metallic dental materials can be classified as precious and non-precious alloys. Precious alloys consist of gold, platinum, and small amounts of non-precious components such as copper, tin, or zinc. The non-precious alloys are based on either nickel or cobalt, alloyed with chrome, molybdenum, manganese, etc. Titanium is used as Grade 2 quality for dental purposes. As well as the dental casting alloys, high purity electroplated gold (99.8 wt.-%) is used in dental technology. This review discusses the corrosion behavior of metallic dental materials with saliva in ''in vitro'' tests and the influence of alloy components on bacteria (Lactobacillus casei and Streptococcus mutans). The test results show that alloys with high gold content, cobalt-based alloys, titanium, and electroplated gold are suitable for use as dental materials. (orig.)

  18. Use of diluted urine for cultivation of Chlorella vulgaris.

    Science.gov (United States)

    Jaatinen, Sanna; Lakaniemi, Aino-Maija; Rintala, Jukka

    2016-01-01

    Our aim was to study the biomass growth of microalga Chlorella vulgaris using diluted human urine as a sole nutrient source. Batch cultivations (21 days) were conducted in five different urine dilutions (1:25-1:300), in 1:100-diluted urine as such and with added trace elements, and as a reference, in artificial growth medium. The highest biomass density was obtained in 1:100-diluted urine with and without additional trace elements (0.73 and 0.60 g L(-1), respectively). Similar biomass growth trends and densities were obtained with 1:25- and 1:300-diluted urine (0.52 vs. 0.48 gVSS L(-1)) indicating that urine at dilution 1:25 can be used to cultivate microalgal based biomass. Interestingly, even 1:300-diluted urine contained sufficiently nutrients and trace elements to support biomass growth. Biomass production was similar despite pH-variation from < 5 to 9 in different incubations indicating robustness of the biomass growth. Ammonium formation did not inhibit overall biomass growth. At the beginning of cultivation, the majority of the biomass consisted of living algal cells, while towards the end, their share decreased and the estimated share of bacteria and cell debris increased.

  19. Influence of extragent dilution upon light rare earths separation

    International Nuclear Information System (INIS)

    Korpusova, R.D.; Smirnova, N.N.

    1978-01-01

    The effect of diluting the extragent on separation of REE in the presence of 6 g-equiv. of LiNO 3 has been studied. For experiments use was made of TBP diluted with kerosene or butylbenzene (40,50,70 vol.%). The separation coefficients have been determined under conditions of saturation. The content of trace amounts of the components has been determined by the weight method; the content of macroimpurities - by the radiometric method. It has been established that the coefficient of Ce-La, Pr-La separation is not affected by the dilution of the extragent. The only exception is the Pr 142 -La pair; in the presence of trace amounts of better extracted element and two-fold dilution the separation coefficient increases almost by 150%. For the Pr-Ce pair the effect of dilution is better noticeable in that case when more extracted element is present in trace amounts. However, a comparison of the effect of dilution on separation coefficients of all REE pairs under study has shown that this effect is the strongest for the samarium-neodymium pair. The data obtained allow an assumption to be made that kerosene, as a diluent, affects the steric factor and coordination. Therefore, upon dilution the coefficient of the samarium-neodymium pair separation is affected most of all

  20. Effects of thermal aging on microstructures of low alloy steel–Ni base alloy dissimilar metal weld interfaces

    International Nuclear Information System (INIS)

    Choi, Kyoung Joon; Kim, Jong Jin; Lee, Bong Ho; Bahn, Chi Bum; Kim, Ji Hyun

    2013-01-01

    In this study, the advanced instrumental analysis has been performed to investigate the effect of long-term thermal aging on the microstructural evolution in the fusion boundary region between weld metal and low alloy steel in dissimilar metal welds. A representative dissimilar weld mock-up made of Alloy 690-Alloy 152-A533 Gr. B was fabricated and aged at 450 °C for 2750 h. The micro- and nano-scale characterization were conducted mainly near in a weld root region by using optical microscopy, scanning electron microscopy, transmission electron microscopy, and three dimensional atom probe tomography. It was observed that the weld root was generally divided into several regions including dilution zone in the Ni-base alloy weld metal, fusion boundary, and heat-affected zone in the low alloy steel. A steep gradient was shown in the chemical composition profile across the interface between A533 Gr. B and Alloy 152. The precipitation of carbides was also observed along and near the fusion boundary of as-welded and aged dissimilar metal joints. It was also found that the precipitation of Cr carbides was enhanced by the thermal aging near the fusion boundary

  1. Effects of thermal aging on microstructures of low alloy steel–Ni base alloy dissimilar metal weld interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyoung Joon; Kim, Jong Jin [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), 100 Banyeon-ri, Eonyang-eup, Ulju-gun, Ulsan 689-798 (Korea, Republic of); Lee, Bong Ho [National Center for Nanomaterials Technology (NCNT), Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 790-784 (Korea, Republic of); Bahn, Chi Bum [Argonne National Laboratory, 9700 S. Cass Ave, Lemont, IL 60439 (United States); Kim, Ji Hyun, E-mail: kimjh@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), 100 Banyeon-ri, Eonyang-eup, Ulju-gun, Ulsan 689-798 (Korea, Republic of)

    2013-10-15

    In this study, the advanced instrumental analysis has been performed to investigate the effect of long-term thermal aging on the microstructural evolution in the fusion boundary region between weld metal and low alloy steel in dissimilar metal welds. A representative dissimilar weld mock-up made of Alloy 690-Alloy 152-A533 Gr. B was fabricated and aged at 450 °C for 2750 h. The micro- and nano-scale characterization were conducted mainly near in a weld root region by using optical microscopy, scanning electron microscopy, transmission electron microscopy, and three dimensional atom probe tomography. It was observed that the weld root was generally divided into several regions including dilution zone in the Ni-base alloy weld metal, fusion boundary, and heat-affected zone in the low alloy steel. A steep gradient was shown in the chemical composition profile across the interface between A533 Gr. B and Alloy 152. The precipitation of carbides was also observed along and near the fusion boundary of as-welded and aged dissimilar metal joints. It was also found that the precipitation of Cr carbides was enhanced by the thermal aging near the fusion boundary.

  2. Dilution thermodynamics of the biologically relevant cation mixtures

    International Nuclear Information System (INIS)

    Kaczyński, Marek; Borowik, Tomasz; Przybyło, Magda; Langner, Marek

    2014-01-01

    Graphical abstract: - Highlights: • Dilution energetics of Ca 2+ can be altered by the aqueous phase ionic composition. • Dissipated heat upon Ca 2+ dilution is drastically reduced in the K + presence. • Reduction of the enthalpy change upon Ca 2+ dilution is K + concentration dependent. • The cooperativity of Ca 2+ hydration might be of great biological relevance providing a thermodynamic argument for the specific ionic composition of the intracellular environment. - Abstract: The ionic composition of intracellular space is rigorously controlled by a variety of processes consuming large quantities of energy. Since the energetic efficiency is an important evolutional criterion, therefore the ion fluxes within the cell should be optimized with respect to the accompanying energy consumption. In the paper we present the experimental evidence that the dilution enthalpies of the biologically relevant ions; i.e. calcium and magnesium depend on the presence of monovalent cations; i.e. sodium and potassium. The heat flow generated during the dilution of ionic mixtures was measured with the isothermal titration calorimetry. When calcium was diluted together with potassium the dilution enthalpy was drastically reduced as the function of the potassium concentration present in the solution. No such effect was observed when the potassium ions were substituted with sodium ones. When the dilution of magnesium was investigated the dependence of the dilution enthalpy on the accompanying monovalent cation was much weaker. In order to interpret experimental evidences the ionic cluster formation is postulated. The specific organization of such cluster should depend on ions charges, sizes and organization of the hydration layers

  3. A first-principles investigation of interstitial defects in dilute tungsten alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gharaee, Leili; Erhart, Paul, E-mail: erhart@chalmers.se

    2015-12-15

    The thermodynamic properties of intrinsic and extrinsic (Ti, V, Zr, Nb, Hf, Ta, Re) defects in tungsten have been investigated using density functional theory calculations. The formation energies of substitutional defects are discussed with respect to their thermodynamic solubility limits. Several different interstitial configurations have been identified as local minima on the potential energy surface. In addition to dumbbell configurations with orientations along 〈111〉 and 〈110〉, a lower symmetry configuration is described, which is referred to as a bridge interstitial. This interstitial type is found to be the lowest energy configuration for mixed-interstitials containing Ti, V, and Re, and can be up to 0.2 eV lower in energy than the other configurations. According to the calculations Ti, V and Re also trap self-interstitial atoms, which can be produced in substantial numbers during ion irradiation, affecting the mobility of the latter.

  4. A study of point defects created by electron irradiation of dilute iron-carbon alloys

    International Nuclear Information System (INIS)

    Leveque, J.L.

    1969-10-01

    Resistivity and magnetic after effect (m.a.e.) measurements are used to study the influence of carbon atoms on the annealing process of point defects created by electron irradiation (3 MeV) at low temperature (20 deg. K). The presence of the carbon atoms has a strong influence on the recovery sub-stage I E and stage III. For the former, the carbon impurity traps the freely migrating iron interstitial. For the latter the effect is interpreted as being due to formation during annealing, of a carbon vacancy pair. A pronounced m.a.e. band is attributed to the reorientation of this carbon vacancy complex. All these results are coherent with the interpretation of a low temperature migrating free interstitial. (author) [fr

  5. Damage production by fast electrons in dilute alloys of vanadium, niobium and molybdenum

    International Nuclear Information System (INIS)

    Jung, P.

    1975-01-01

    Vanadium, niobium and molybdenum samples containing about 300 ppm of zirconium were irradiated at helium temperature with electrons of energies between 0,6 and 3.1 MeV. The measured damage rates were analysed in terms of minimum threshold energy, damage function and resistivity per unit concentration of Frenkel pairs. For the minimum threshold energy T(Sub)d, values of 25+-2 eV (V) 28+-2 e V(Nb) and 34+-2 e V(Mo) were obtained. Pronounced differences between the displacement functions of molybdenum and that of niobium and vanadium are found which are explained by different stability of the defects during the irradiation at helium temperature

  6. Effect of spin-orbit scattering on transport properties of low-dimensional dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Heers, Swantje

    2011-09-21

    The scope of this thesis is to gain insight, by means of ab initio-calculations, into the physics of momentum and spin relaxation phenomena induced by electron scattering at impurities and defects in the noble metals copper, silver and gold. The main results are subdivided in three parts. In the first part, momentum- and spinrelaxation times due to scattering at 3d, 4sp, 4d, 5sp, 5d and 6sp impurities in copper and gold fcc bulk are investigated. The inversion symmetry of the crystals leads to a two-fold degeneracy of all states on the Fermi surface, and therefore spin relaxation is dominated by the Elliott-Yafet mechanism as well as the spin-orbit coupling of the impurity. For impurities in gold, we calculate much shorter spin-relaxation times than in copper because of the stronger spin-orbit coupling of the gold host. Furthermore, we have found important qualitative differences between the relaxation times obtained for the d- and the sp- impurities. As scattering at d-impurities is resonant, the electrons spend much more time at the impurity sites than in the case of the sp-impurities; therefore, they are much longer exhibited to the spin-orbit coupling of the impurity. This results in considerably shorter spin-relaxation times, even if the momentum scattering rates are in the same order of magnitude. Finally, the investigation of interference of scattering processes at impurity dimers reveals that relevant differences to the independent-impurity approximation appear only for strong d-scatterer, placed at nearest neighboring sites. In the second part we investigate the reduction of spin-conserving surface-state lifetimes induced by adatom- and impurity-scattering on the (111) surfaces of copper, silver and gold films with different thicknesses. We have found strong qualitative differences in the lifetimes when comparing the results for adatoms to those of impurities in the first and second layer. The trends for the latter ones are similar to those calculated in bulk in the first part of the thesis. In the third part, we investigate spin-orbit induced effects on thin (001) and (111) copper and gold films with focus on spin-relaxation mechanisms. We consider both symmetric and asymmetric systems, where the asymmetry of the latter ones is created by covering one side of the film with one layer of Zn. For the symmetric films, spin-mixing parameters and momentum- and spin-relaxation times due to scattering at self-adatoms are calculated. Whereas the largest spin-mixing in (111) films has been obtained for the surface states, on the Fermi surfaces of the (001) films spin hot spots occur, which are caused by anticrossings of bands and lead to locally very high spin mixing. In the asymmetric films, the situation is qualitatively different, as the spin-orbit coupling results in a splitting of all bands and the formation of local effective magnetic fields, the so-called spin-orbit fields. The precession of the electron spin around these axes together with momentum scattering, resulting in a change of the precession axis after each scattering event, is known to lead to spin dephasing. Spin-orbit fields for (001) and (111) copper and gold films are presented. Large fields have been obtained for both surface orientations especially for bulk-like states at the outer boundaries of the Brillouin zone. Furthermore, for the (111) surface states, we find a Rashba-splitting which agrees with experiment and previous calculations. (orig.)

  7. Depth concentrations of deuterium ions implanted into some pure metals and alloys

    International Nuclear Information System (INIS)

    Didyk, A.Yu.; Wisniewski, R.; Kitowski, K.; Wilczynska, T.; Hofman, A.; Kulikauskas, V.; Shiryaev, A.A.; Zubavichyus, Ya.V.

    2011-01-01

    Pure metals (Cu, Ti, Zr, V, Pd) and diluted Pd alloys (Pd-Ag, Pd-Pt, Pd-Ru, Pd-Rh) were implanted by 25-keV deuterium ions at fluences in the range (1.2-2.3) x 10 22 D + /m 2 . The post-treatment depth distributions of deuterium ions were measured 10 days and three months after the implantation by using Elastic Recoil Detection Analysis (ERDA) and Rutherford Backscattering (RBS). Comparison of the obtained results allowed us to make conclusions about relative stability of deuterium and hydrogen gases in pure metals and diluted Pd alloys. Very high diffusion rates of implanted deuterium ions from V and Pd pure metals and Pd alloys were observed. Small-angle X-ray scattering revealed formation of nanosized defects in implanted corundum and titanium

  8. Specific heat in diluted magnetic semiconductor quantum ring

    Science.gov (United States)

    Babanlı, A. M.; Ibragimov, B. G.

    2017-11-01

    In the present paper, we have calculated the specific heat and magnetization of a quantum ring of a diluted magnetic semiconductor (DMS) material in the presence of magnetic field. We take into account the effect of Rashba spin-orbital interaction, the exchange interaction and the Zeeman term on the specific heat. We have calculated the energy spectrum of the electrons in diluted magnetic semiconductor quantum ring. Moreover we have calculated the specific heat dependency on the magnetic field and Mn concentration at finite temperature of a diluted magnetic semiconductor quantum ring.

  9. On the Wigner law in dilute random matrices

    Science.gov (United States)

    Khorunzhy, A.; Rodgers, G. J.

    1998-12-01

    We consider ensembles of N × N symmetric matrices whose entries are weakly dependent random variables. We show that random dilution can change the limiting eigenvalue distribution of such matrices. We prove that under general and natural conditions the normalised eigenvalue counting function coincides with the semicircle (Wigner) distribution in the limit N → ∞. This can be explained by the observation that dilution (or more generally, random modulation) eliminates the weak dependence (or correlations) between random matrix entries. It also supports our earlier conjecture that the Wigner distribution is stable to random dilution and modulation.

  10. Dilute Oxygen Combustion Phase IV Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Riley, M.F.

    2003-04-30

    Novel furnace designs based on Dilute Oxygen Combustion (DOC) technology were developed under subcontract by Techint Technologies, Coraopolis, PA, to fully exploit the energy and environmental capabilities of DOC technology and to provide a competitive offering for new furnace construction opportunities. Capital cost, fuel, oxygen and utility costs, NOx emissions, oxide scaling performance, and maintenance requirements were compared for five DOC-based designs and three conventional air5-fired designs using a 10-year net present value calculation. A furnace direct completely with DOC burners offers low capital cost, low fuel rate, and minimal NOx emissions. However, these benefits do not offset the cost of oxygen and a full DOC-fired furnace is projected to cost $1.30 per ton more to operate than a conventional air-fired furnace. The incremental cost of the improved NOx performance is roughly $6/lb NOx, compared with an estimated $3/lb. NOx for equ8pping a conventional furnace with selective catalytic reduction (SCCR) technology. A furnace fired with DOC burners in the heating zone and ambient temperature (cold) air-fired burners in the soak zone offers low capital cost with less oxygen consumption. However, the improvement in fuel rate is not as great as the full DOC-fired design, and the DOC-cold soak design is also projected to cost $1.30 per ton more to operate than a conventional air-fired furnace. The NOx improvement with the DOC-cold soak design is also not as great as the full DOC fired design, and the incremental cost of the improved NOx performance is nearly $9/lb NOx. These results indicate that a DOC-based furnace design will not be generally competitive with conventional technology for new furnace construction under current market conditions. Fuel prices of $7/MMBtu or oxygen prices of $23/ton are needed to make the DOC furnace economics favorable. Niche applications may exist, particularly where access to capital is limited or floor space limitations

  11. Cathodic protection of steel by electrodeposited zinc-nickel alloy coatings

    Energy Technology Data Exchange (ETDEWEB)

    Baldwin, K.R.; Smith, C.J.E. [Defence Research Agency, Farnborough (United Kingdom). Structural Materials Centre; Robinson, M.J. [Cranfield Univ. (United Kingdom). School of Industrial and Manufacturing Science

    1995-12-01

    The ability of electrodeposited zinc-nickel alloy coatings to cathodically protect steel was studied in dilute chloride solutions. The potential distribution along steel strips partly electroplated with zinc-nickel alloys was determined, and the length of exposed steel that was held below the minimum protection potential (E{sub prot}) was taken as a measure of the level of cathodic protection (CP) provided by the alloy coatings. The level of CP afforded by zinc alloy coatings was found to decrease with increasing nickel content. When nickel content was increased to {approx} {ge} 21 wt%, no CP was obtained. Surface analysis of uncoupled zinc-nickel alloys that were immersed in sodium chloride (NaCl) solutions showed the concentration of zinc decreased in the surface layers while the concentration of nickel increased, indicating that the alloys were susceptible to dezincification. The analysis of zinc-nickel alloy coatings on partly electroplated steel strips that were immersed in chloride solution showed a significantly higher level of dezincification than that found for uncoupled alloy coatings. This effect accounted for the rapid loss of CP afforded to steel by some zinc alloy coatings, particularly those with high initial nickel levels.

  12. A theory of stable-isotope dilution mass spectrometry

    International Nuclear Information System (INIS)

    Pickup, J.F.; McPherson, C.K.

    1977-01-01

    In order to perform quantitative analysis using stable isotope dilution with mass spectrometry, an equation is derived which describes the relationship between the relative proportions of natural and labelled material and measured isotope ratios

  13. Paradigms in isotope dilution mass spectrometry for elemental speciation analysis

    International Nuclear Information System (INIS)

    Meija, Juris; Mester, Zoltan

    2008-01-01

    Isotope dilution mass spectrometry currently stands out as the method providing results with unchallenged precision and accuracy in elemental speciation. However, recent history of isotope dilution mass spectrometry has shown that the extent to which this primary ratio measurement method can deliver accurate results is still subject of active research. In this review, we will summarize the fundamental prerequisites behind isotope dilution mass spectrometry and discuss their practical limits of validity and effects on the accuracy of the obtained results. This review is not to be viewed as a critique of isotope dilution; rather its purpose is to highlight the lesser studied aspects that will ensure and elevate current supremacy of the results obtained from this method

  14. An overview the boron dilution issue in PWRs

    International Nuclear Information System (INIS)

    Hyvaerinen, J.

    1994-01-01

    The presentation is an overview of boron (boric acid) dilution in pressurized water reactors (PWRs). Boric acid has been widely used in PWRs as a dissolved poison, as one of the main reactivity controlling means, for a long time, from nearly but not quite from the beginning of the design, construction and operation of PWRs in the present-day sense. The specific safety issue, namely the risk of uncontrolled reactivity insertion due to inadvertent boron dilution, is discussed first, followed by a brief look on the history of boron usage in PWRs. A discussion of boron dilution phenomenology is presented next in general terms. Some particular concerns that boron dilution phenomena arouse in the minds of a regulator will also be presented before concluding with a brief look on the future of dissolved poisons. (11 refs.)

  15. A Cold Cycle Dilution Refrigerator for Space Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The cold cycle dilution refrigerator is a continuous refrigerator capable of cooling to temperatures below 100 mK that makes use of a novel thermal magnetic pump....

  16. Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

    Science.gov (United States)

    Draper, Susan L.

    1987-01-01

    Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

  17. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Science.gov (United States)

    Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

    2017-12-01

    Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

  18. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  19. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35microm SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Niu, G.; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.

    1999-01-01

    The effects of gamma irradiation on the Shallow-Trench Isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation

  20. Influence Of Dilution Factor For Activity Measurement Of 60CO

    International Nuclear Information System (INIS)

    Hermawan-Candra; Nazaroh; Ermi-Juita

    2003-01-01

    Influence of dilution factor for activity measurement of 60 Co has been studied. The aim of this research is to determine influence between activity measurement result of 60 Co before and after diluted. Measurement were done by using ionization chamber detectors system and gamma spectrometry system with NaI(TI) detector. Discrepancy within three ionization chambers measurements were 0.2% - 2.1% and NaI(Tl) were 3.5% - 6%. (author)

  1. Attentional sets influence perceptual load effects, but not dilution effects.

    Science.gov (United States)

    Benoni, Hanna; Zivony, Alon; Tsal, Yehoshua

    2014-01-01

    Perceptual load theory [Lavie, N. (1995). Perceptual load as a necessary condition for selective attention. Journal of Experimental Psychology: Human Perception and Performance, 21, 451-468.; Lavie, N., & Tsal, Y. (1994) Perceptual load as a major determinant of the locus of selection in visual attention. Perception & Psychophysics, 56, 183-197.] proposes that interference from distractors can only be avoided in situations of high perceptual load. This theory has been supported by blocked design manipulations separating low load (when the target appears alone) and high load (when the target is embedded among neutral letters). Tsal and Benoni [(2010a). Diluting the burden of load: Perceptual load effects are simply dilution effects. Journal of Experimental Psychology: Human Perception and Performance, 36, 1645-1656.; Benoni, H., & Tsal, Y. (2010). Where have we gone wrong? Perceptual load does not affect selective attention. Vision Research, 50, 1292-1298.] have recently shown that these manipulations confound perceptual load with "dilution" (the mere presence of additional heterogeneous items in high-load situations). Theeuwes, Kramer, and Belopolsky [(2004). Attentional set interacts with perceptual load in visual search. Psychonomic Bulletin & Review, 11, 697-702.] independently questioned load theory by suggesting that attentional sets might also affect distractor interference. When high load and low load were intermixed, and participants could not prepare for the presentation that followed, both the low-load and high-load trials showed distractor interference. This result may also challenge the dilution account, which proposes a stimulus-driven mechanism. In the current study, we presented subjects with both fixed and mixed blocks, including a mix of dilution trials with low-load trials and with high-load trials. We thus separated the effect of dilution from load and tested the influence of attentional sets on each component. The results revealed that whereas

  2. PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

    OpenAIRE

    Şahin, Bünyamin; Ağan, Sedat

    2009-01-01

    We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

  3. Effects of dissolved species on radiolysis of diluted seawater

    International Nuclear Information System (INIS)

    Hata, Kuniki; Hanawa, Satoshi; Kasahara, Shigeki; Motooka, Takafumi; Tsukada, Takashi; Muroya, Yusa; Yamashita, Shinichi; Katsumura, Yosuke

    2014-01-01

    Fukushima Daiichi Nuclear Power Plants (NPPs) experienced seawater injection into the cores and fuel pools as an emergent measure after the accident. After the accident, retained water has been continuously desalinized, and subsequently the concentration of chloride ion (Cl"-) has been kept at a lower level these days. These ions in seawater are known to affect water radiolysis, which causes the production of radiolytic products, such as hydrogen peroxide (H_2O_2), molecular hydrogen (H_2) and molecular oxygen (O_2). However, the effects of dissolved ions relating seawater on the production of the stable radiolytic products are not well understood in the diluted seawater. To understand of the production behavior in diluted seawater under radiation, radiolysis calculations were carried out. Production of H_2 is effectively suppressed by diluting by up to vol10%. The concentrations of oxidants (H_2O_2 and O_2) are also suppressed by dilution of dissolved species. The effect of oxidants on corrosion of materials is thought to be low when the seawater was diluted by less than 1 vol% by water. It is also shown that deaeration is one of the effective measure to suppress the concentrations of oxidants at a lower level for any dilution conditions. (author)

  4. Dilution Refrigeration of Multi-Ton Cold Masses

    CERN Document Server

    Wikus, P; CERN. Geneva

    2007-01-01

    Dilution refrigeration is the only means to provide continuous cooling at temperatures below 250 mK. Future experiments featuring multi-ton cold masses require a new generation of dilution refrigeration systems, capable of providing a heat sink below 10 mK at cooling powers which exceed the performance of present systems considerably. This thesis presents some advances towards dilution refrigeration of multi-ton masses in this temperature range. A new method using numerical simulation to predict the cooling power of a dilution refrigerator of a given design has been developed in the framework of this thesis project. This method does not only allow to take into account the differences between an actual and an ideal continuous heat exchanger, but also to quantify the impact of an additional heat load on an intermediate section of the dilute stream. In addition, transient behavior can be simulated. The numerical model has been experimentally verified with a dilution refrigeration system which has been designed, ...

  5. Magnetic properties of metastable bcc and fcc Fe-Cu alloys produced by vapor quenching

    International Nuclear Information System (INIS)

    Sumiyama, Kenji; Yoshitake, Tsutomu; Nakamura, Yoji

    1984-01-01

    High concentration Fesub(1-x)Cusub(x) alloys have been obtained by rf sputtering technique and investigated by X-ray diffraction and magnetization measurements. The bcc phase is extended over the region with x=0-0.4, while the fcc phase with x=0.6-1.0. For x=0.4-0.6, we have the mixed phase of bcc and fcc. The lattice constant of bcc phase increases slightly and that of fcc phase decreases with increasing x. In the bcc alloys, the average magnetic moment decreases with increasing x and deviates upwards from the simple dilution law. In the fcc alloys, the magnetic moment also decreases with increasing x but it deviates downwards from the simple dilution law. The Curie temperature, Tsub(c), of the Fesub(1-x)Cusub(x) alloys decreases abruptly with increasing x: Tsub(c) is higher than 750 K for the bcc alloys, while it is lower than 320 K for the fcc alloys and become 0 K at about x=0.92. (author)

  6. Low activation ferritic alloys

    Science.gov (United States)

    Gelles, David S.; Ghoniem, Nasr M.; Powell, Roger W.

    1986-01-01

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  7. PLUTONIUM-ZIRCONIUM ALLOYS

    Science.gov (United States)

    Schonfeld, F.W.; Waber, J.T.

    1960-08-30

    A series of nuclear reactor fuel alloys consisting of from about 5 to about 50 at.% zirconium (or higher zirconium alloys such as Zircaloy), balance plutonium, and having the structural composition of a plutonium are described. Zirconium is a satisfactory diluent because it alloys readily with plutonium and has desirable nuclear properties. Additional advantages are corrosion resistance, excellent fabrication propenties, an isotropie structure, and initial softness.

  8. Advances in titanium alloys

    International Nuclear Information System (INIS)

    Seagle, S.R.; Wood, J.R.

    1993-01-01

    As described above, new developments in the aerospace market are focusing on higher temperature alloys for jet engine components and higher strength/toughness alloys for airframe applications. Conventional alloys for engines have reached their maximum useful temperature of about 1000 F (540 C) because of oxidation resistance requirements. IMI 834 and Ti-1100 advanced alloys show some improvement, however, the major improvement appears to be in gamma titanium aluminides which could extend the maximum usage temperature to about 1500 F (815 C). This puts titanium alloys in a competitive position to replace nickel-base superalloys. Advanced airframe alloys such as Ti-6-22-22S, Beta C TM , Ti-15-333 and Ti-10-2-3 with higher strength than conventional Ti-6-4 are being utilized in significantly greater quantities, both in military and commercial applications. These alloys offer improved strength with little or no sacrifice in toughness and improved formability, in some cases. Advanced industrial alloys are being developed for improved corrosion resistance in more reducing and higher temperature environments such as those encountered in sour gas wells. Efforts are focused on small precious metal additions to optimize corrosion performance for specific applications at a modest increase in cost. As these applications develop, the usage of titanium alloys for industrial markets should steadily increase to approach that for aerospace applications. (orig.)

  9. Laser surface alloying of aluminium-transition metal alloys

    International Nuclear Information System (INIS)

    Almeida, A.; Vilar, R.

    1998-01-01

    Laser surface alloying has been used as a tool to produce hard and corrosion resistant Al-transition metal (TM) alloys. Cr and Mo are particularly interesting alloying elements to produce stable high-strength alloys because they present low diffusion coefficients and solid solubility in Al. To produce Al-TM surface alloys a two-step laser process was developed: firstly, the material is alloyed using low scanning speed and secondly, the microstructure is modified by a refinement step. This process was used in the production of Al-Cr, Al-Mo and Al-Mo and Al-Nb surface alloys by alloying Cr, Mo or Nb powder into an Al and 7175 Al alloy substrate using a CO 2 laser . This paper presents a review of the work that has been developed at Instituto Superior Tecnico on laser alloying of Al-TM alloy, over the last years. (Author) 16 refs

  10. Point defects and diffusion in alloys: correlation effects

    International Nuclear Information System (INIS)

    Barbe, Vincent

    2006-01-01

    Kinetic models in alloys aim at predicting the transport properties of a system starting from the microscopic jump frequencies of defects. Such properties are of prior importance in systems which stay out of equilibrium for a long time, as for example irradiated alloys in nuclear reactors. We hereby propose several developments of the recent self-consistent mean field (SCMF) kinetic theory, which deals particularly with the correlation effects due to the coupling of atomic and defect fluxes. They are taken into account through a non-equilibrium distribution function of the system, which is derived from the time evolution of small clusters (of two or more atoms or defects). We therefore introduce a set of 'dynamic' interactions called effective Hamiltonian. The SCMF theory is extended to treat high jump frequency ratios for the vacancy mechanism, as well as the transport through interstitial defects. We use in both cases an atomic model which accounts for the thermodynamic properties of the alloy, as e.g. the short-range order. Those models are eventually applied to predict the diffusion properties in two model alloys of nuclear interest: the concentrated Fe-Ni-Cr solid solution and the dilute Fe(P) alloy. We present adapted atomic models and compare our predictions to experimental data. (author)

  11. Modeling syngas-fired gas turbine engines with two dilutants

    Science.gov (United States)

    Hawk, Mitchell E.

    2011-12-01

    Prior gas turbine engine modeling work at the University of Wyoming studied cycle performance and turbine design with air and CO2-diluted GTE cycles fired with methane and syngas fuels. Two of the cycles examined were unconventional and innovative. The work presented herein reexamines prior results and expands the modeling by including the impacts of turbine cooling and CO2 sequestration on GTE cycle performance. The simple, conventional regeneration and two alternative regeneration cycle configurations were examined. In contrast to air dilution, CO2 -diluted cycle efficiencies increased by approximately 1.0 percentage point for the three regeneration configurations examined, while the efficiency of the CO2-diluted simple cycle decreased by approximately 5.0 percentage points. For CO2-diluted cycles with a closed-exhaust recycling path, an optimum CO2-recycle pressure was determined for each configuration that was significantly lower than atmospheric pressure. Un-cooled alternative regeneration configurations with CO2 recycling achieved efficiencies near 50%, which was approximately 3.0 percentage points higher than the conventional regeneration cycle and simple cycle configurations that utilized CO2 recycling. Accounting for cooling of the first two turbine stages resulted in a 2--3 percentage point reduction in un-cooled efficiency, with air dilution corresponding to the upper extreme. Additionally, when the work required to sequester CO2 was accounted for, cooled cycle efficiency decreased by 4--6 percentage points, and was more negatively impacted when syngas fuels were used. Finally, turbine design models showed that turbine blades are shorter with CO2 dilution, resulting in fewer design restrictions.

  12. Dilution Ratios for HB Line Phase I Eductor System

    International Nuclear Information System (INIS)

    Steimke, J.L.

    2002-01-01

    HB Line Phase I product transfer includes an eductor which transfers liquid from Product Hold Tank (PHT) RT-33 or RT-34 to Tank 11.1. The eductor also dilutes the liquid from the PHT with eductant. Dilution must be reliably controlled because of criticality concerns with H Canyon Tanks. The eductor system, which contains a 1 inch Model 264 Schutte and Koerting eductor, was previously modeled [1] in 1998 and dilution ratios were calculated for different flow restrictors, eductant pressures and densities for the eductant and the contents of the PHT. The previous calculation was performed using spreadsheet software no longer supported at SRS. For the previous work dilution ratio was defined as the volume of eductant consumed divided by volume of PHT contents transferred. Since 1998 HB Line Engineering has changed the definition of dilution ratio to the total volume of liquid, eductant consumed plus the volume of PHT liquid transferred, divided by the volume of PHT liquid transferred. The 1998 base case calculation was for a restrictor diameter of 0.334 inches, an eductant supply pressure of 15 psig, full PHT, an eductant specific gravity of 1.385 and a PHT density of 1.015. The base case dilution ratio calculated in 1998 using the current definition was 3.52. After accounting for uncertainty the minimum dilution ratio decreased to 3.23. In 2001 HB Line Engineering requested that the calculation be repeated for a manganous nitrate solution eductant and also a process water eductant. The other conditions were the same as for the 1998 calculation. The objective of this report is to document the calculations and the results

  13. Degradation mode survey candidate titanium-base alloys for Yucca Mountain project waste package materials. Revision 1

    Energy Technology Data Exchange (ETDEWEB)

    Gdowski, G.E.

    1997-12-01

    The Yucca Mountain Site Characterization Project (YMP) is evaluating materials from which to fabricate high-level nuclear waste containers (hereafter called waste packages) for the potential repository at Yucca Mountain, Nevada. Because of their very good corrosion resistance in aqueous environments titanium alloys are considered for container materials. Consideration of titanium alloys is understandable since about one-third (in 1978) of all titanium produced is used in applications where corrosion resistance is of primary importance. Consequently, there is a considerable amount of data which demonstrates that titanium alloys, in general, but particularly the commercial purity and dilute {alpha} grades, are highly corrosion resistant. This report will discuss the corrosion characteristics of Ti Gr 2, 7, 12, and 16. The more highly alloyed titanium alloys which were developed by adding a small Pd content to higher strength Ti alloys in order to give them better corrosion resistance will not be considered in this report. These alloys are all two phase ({alpha} and {beta}) alloys. The palladium addition while making these alloys more corrosion resistant does not give them the corrosion resistance of the single phase {alpha} and near-{alpha} (Ti Gr 12) alloys.

  14. The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

    Directory of Open Access Journals (Sweden)

    Mursal Mursal

    2014-07-01

    Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

  15. Quantifying the dilution effect for models in ecological epidemiology.

    Science.gov (United States)

    Roberts, M G; Heesterbeek, J A P

    2018-03-01

    The dilution effect , where an increase in biodiversity results in a reduction in the prevalence of an infectious disease, has been the subject of speculation and controversy. Conversely, an amplification effect occurs when increased biodiversity is related to an increase in prevalence. We explore the conditions under which these effects arise, using multi species compartmental models that integrate ecological and epidemiological interactions. We introduce three potential metrics for quantifying dilution and amplification, one based on infection prevalence in a focal host species, one based on the size of the infected subpopulation of that species and one based on the basic reproduction number. We introduce our approach in the simplest epidemiological setting with two species, and show that the existence and strength of a dilution effect is influenced strongly by the choices made to describe the system and the metric used to gauge the effect. We show that our method can be generalized to any number of species and to more complicated ecological and epidemiological dynamics. Our method allows a rigorous analysis of ecological systems where dilution effects have been postulated, and contributes to future progress in understanding the phenomenon of dilution in the context of infectious disease dynamics and infection risk. © 2018 The Author(s).

  16. A Study on the Stability of Diluted Bee Venom Solution

    Directory of Open Access Journals (Sweden)

    Mi-Suk Kang

    2003-06-01

    Full Text Available Objective : The purpose of this study was to investigate the stability of bee venom according to the keeping method and period. Method : The author observed microbial contamination of bee venom in nutrient agar, broth, YPD agar and YPD media and antibacterial activity for S. aureus, E. coli manufactured 12, 6 and 3 months ago as the two type of room temperature and 4℃ cold storage. Result : 1. 1:3,000 and 1:4,000 diluted bee venom solution did not show microbial contamination both room temperature and cold storage within twelve months. 2. There was antibacterial activity of diluted bee venom for S. aureus in cold storage within twelve months and there was no antibacterial activity of diluted bee venom for S. aureus in twelve months, room temperature storage. 3. We could not observe the zone of inhibition around paper disc of all for E.coli. in 1:3,000, 1:30,000 and 1:3,000,000 diluted bee venom solution, respectively. According to results, we expect that diluted bee venom solution is stable both cold and room temperature storage within twelve months.

  17. Initial magnetic susceptibility of the diluted magnetopolymer elastic composites

    International Nuclear Information System (INIS)

    Borin, D.Yu.; Odenbach, S.

    2017-01-01

    In this work diluted magnetopolymer elastic composites based on magnetic microparticles are experimentally studied. Considered samples have varied concentration of the magnetic powder and different structural anisotropy. Experimental data on magnetic properties are accomplished by microstructural observations performed using X-Ray tomography. Influence of the particles amount and structuring effects on the initial magnetic susceptibility of the composites as well as the applicability of the Maxwell-Garnett approximation, which is widely used in considerations of magnetopolymer elastic composites, are evaluated. It is demonstrated that the approximation works well for diluted samples containing randomly distributed magnetic particles and for the diluted samples with chain-like structures oriented perpendicular to an externally applied field, while it fails to predict the susceptibility of the samples with structures oriented parallel to the field. Moreover, it is shown, that variation of the chains morphology does not significantly change the composite initial magnetic susceptibility. - Highlights: • The Maxwell-Garnet prediction works well for the diluted isotropic composites. • The Maxwell-Garnet prediction can be used for composites with structures oriented perpendicular to an applied field. • Chains oriented parallel to an applied field significantly increase the composite initial magnetic susceptibility. • The number and thickness of chains is not of the highest importance for the diluted composites. • The crucial reason of the observed effect is expected to be the demagnetisation factor of the chains.

  18. A probabilistic analysis of rapid boron dilution scenarios

    International Nuclear Information System (INIS)

    Kohut, P.; Diamond, D.J.

    1993-01-01

    A probabilistic and deterministic analysis of a rapid boron dilution scenario related to reactor restart was performed. The event is initiated by a loss of off-site power during the startup dilution process. The automatic restart of the charging pump in such cases may lead to the accumulation of a diluted slug of water in the lower plenum. The restart of the reactor coolant pumps may send the diluted slug through the core, adding sufficient reactivity to overcome the shutdown margin and cause a power excursion. The concern is that the power excursion is sufficient in certain circumstances to cause fuel damage. The estimated core damage frequency based on the scoping analysis is 1.0--3.0E-05/yr for the plants analyzed. These are relatively significant values when compared to desirable goals. The analysis contained assumptions related to plant specific design characteristics which may lead to non-conservative estimates. The most important conservative assumptions were that mixing of the injected diluted water is insignificant and that fuel damage occurs when the slug passes through the core

  19. On the transition from short-range diffusion-limited to collision-limited growth in alloy solidification

    International Nuclear Information System (INIS)

    Aziz, M.J.; Boettinger, W.J.

    1994-01-01

    Short-range diffusion-limited growth, collision-limited growth, and the transition between the two regimes are explained as natural consequences of a single model for the kinetics of alloy solidification. Analytical expressions are developed for the velocity-undercooling function of a planar interface during dilute alloy solidification, using Turnbull's collision-limited growth model and the Continuous Growth Solute Trapping Model of Aziz and Kaplan both with and without a solute drag effect. The interface mobility, -dv/dT, is shown to be very high (proportional to the speed of sound) if the alloy is sufficiently dilute or if the growth rate is sufficiently rapid for nearly complete solute trapping. The interface mobility is reduced by the three orders of magnitude (becoming proportional to the diffusive speed) at intermediate growth rates where partial solute trapping occurs. Differences in low velocity predictions of the models with and without solute drag are also discussed. Comparison of the results of the analytical expressions to numerical solutions of the non-dilute kinetic model for Al-Be alloys shows that the dilute approximation breaks down at melt compositions on the order of 10 at.%. Similar variations in the interface mobility are shown for the disorder-trapping model of Boettinger and Aziz

  20. Non‐diluted seawater enhances nasal ciliary beat frequency and wound repair speed compared to diluted seawater and normal saline

    Science.gov (United States)

    Bonnomet, Arnaud; Luczka, Emilie; Coraux, Christelle

    2016-01-01

    Background The regulation of mucociliary clearance is a key part of the defense mechanisms developed by the airway epithelium. If a high aggregate quality of evidence shows the clinical effectiveness of nasal irrigation, there is a lack of studies showing the intrinsic role of the different irrigation solutions allowing such results. This study investigated the impact of solutions with different pH and ionic compositions, eg, normal saline, non‐diluted seawater and diluted seawater, on nasal mucosa functional parameters. Methods For this randomized, controlled, blinded, in vitro study, we used airway epithelial cells obtained from 13 nasal polyps explants to measure ciliary beat frequency (CBF) and epithelial wound repair speed (WRS) in response to 3 isotonic nasal irrigation solutions: (1) normal saline 0.9%; (2) non‐diluted seawater (Physiomer®); and (3) 30% diluted seawater (Stérimar). The results were compared to control (cell culture medium). Results Non‐diluted seawater enhanced the CBF and the WRS when compared to diluted seawater and to normal saline. When compared to the control, it significantly enhanced CBF and slightly, though nonsignificantly, improved the WRS. Interestingly, normal saline markedly reduced the number of epithelial cells and ciliated cells when compared to the control condition. Conclusion Our results suggest that the physicochemical features of the nasal wash solution is important because it determines the optimal conditions to enhance CBF and epithelial WRS thus preserving the respiratory mucosa in pathological conditions. Non‐diluted seawater obtains the best results on CBF and WRS vs normal saline showing a deleterious effect on epithelial cell function. PMID:27101776

  1. Non-diluted seawater enhances nasal ciliary beat frequency and wound repair speed compared to diluted seawater and normal saline.

    Science.gov (United States)

    Bonnomet, Arnaud; Luczka, Emilie; Coraux, Christelle; de Gabory, Ludovic

    2016-10-01

    The regulation of mucociliary clearance is a key part of the defense mechanisms developed by the airway epithelium. If a high aggregate quality of evidence shows the clinical effectiveness of nasal irrigation, there is a lack of studies showing the intrinsic role of the different irrigation solutions allowing such results. This study investigated the impact of solutions with different pH and ionic compositions, eg, normal saline, non-diluted seawater and diluted seawater, on nasal mucosa functional parameters. For this randomized, controlled, blinded, in vitro study, we used airway epithelial cells obtained from 13 nasal polyps explants to measure ciliary beat frequency (CBF) and epithelial wound repair speed (WRS) in response to 3 isotonic nasal irrigation solutions: (1) normal saline 0.9%; (2) non-diluted seawater (Physiomer®); and (3) 30% diluted seawater (Stérimar). The results were compared to control (cell culture medium). Non-diluted seawater enhanced the CBF and the WRS when compared to diluted seawater and to normal saline. When compared to the control, it significantly enhanced CBF and slightly, though nonsignificantly, improved the WRS. Interestingly, normal saline markedly reduced the number of epithelial cells and ciliated cells when compared to the control condition. Our results suggest that the physicochemical features of the nasal wash solution is important because it determines the optimal conditions to enhance CBF and epithelial WRS thus preserving the respiratory mucosa in pathological conditions. Non-diluted seawater obtains the best results on CBF and WRS vs normal saline showing a deleterious effect on epithelial cell function. © 2016 The Authors International Forum of Allergy & Rhinology, published by ARSAAOA, LLC.

  2. High temperature niobium alloys

    International Nuclear Information System (INIS)

    Wojcik, C.C.

    1991-01-01

    Niobium alloys are currently being used in various high temperature applications such as rocket propulsion, turbine engines and lighting systems. This paper presents an overview of the various commercial niobium alloys, including basic manufacturing processes, properties and applications. Current activities for new applications include powder metallurgy, coating development and fabrication of advanced porous structures for lithium cooled heat pipes

  3. Shape memory alloys

    International Nuclear Information System (INIS)

    Kaszuwara, W.

    2004-01-01

    Shape memory alloys (SMA), when deformed, have the ability of returning, in certain circumstances, to their initial shape. Deformations related to this phenomenon are for polycrystals 1-8% and up to 15% for monocrystals. The deformation energy is in the range of 10 6 - 10 7 J/m 3 . The deformation is caused by martensitic transformation in the material. Shape memory alloys exhibit one directional or two directional shape memory effect as well as pseudoelastic effect. Shape change is activated by temperature change, which limits working frequency of SMA to 10 2 Hz. Other group of alloys exhibit magnetic shape memory effect. In these alloys martensitic transformation is triggered by magnetic field, thus their working frequency can be higher. Composites containing shape memory alloys can also be used as shape memory materials (applied in vibration damping devices). Another group of composite materials is called heterostructures, in which SMA alloys are incorporated in a form of thin layers The heterostructures can be used as microactuators in microelectromechanical systems (MEMS). Basic SMA comprise: Ni-Ti, Cu (Cu-Zn,Cu-Al, Cu-Sn) and Fe (Fe-Mn, Fe-Cr-Ni) alloys. Shape memory alloys find applications in such areas: automatics, safety and medical devices and many domestic appliances. Currently the most important appears to be research on magnetic shape memory materials and high temperature SMA. Vital from application point of view are composite materials especially those containing several intelligent materials. (author)

  4. Thermofluency in zirconium alloys

    International Nuclear Information System (INIS)

    Orozco M, E.A.

    1976-01-01

    A summary is presented about the theoretical and experimental results obtained at present in thermofluency under radiation in zirconium alloys. The phenomenon of thermofluency is presented in a general form, underlining the thermofluency at high temperature because this phenomenon is similar to the thermofluency under radiation, which ocurrs in zirconium alloys into the operating reactor. (author)

  5. Ductile transplutonium metal alloys

    Science.gov (United States)

    Conner, William V.

    1983-01-01

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as sources of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  6. Ultrahigh temperature intermetallic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Brady, M.P.; Zhu, J.H.; Liu, C.T.; Tortorelli, P.F.; Wright, J.L.; Carmichael, C.A.; Walker, L.R. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.

    1997-12-01

    A new family of Cr-Cr{sub 2}X based alloys with fabricability, mechanical properties, and oxidation resistance superior to previously developed Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys has been identified. The new alloys can be arc-melted/cast without cracking, and exhibit excellent room temperature and high-temperature tensile strengths. Preliminary evaluation of oxidation behavior at 1100 C in air indicates that the new Cr-Cr{sub 2}X based alloys form an adherent chromia-based scale. Under similar conditions, Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys suffer from extensive scale spallation.

  7. Neutron-absorbing alloys

    International Nuclear Information System (INIS)

    Portnoi, K.I.; Arabei, L.B.; Gryaznov, G.M.; Levi, L.I.; Lunin, G.L.; Kozhukhov, V.M.; Markov, J.M.; Fedotov, M.E.

    1975-01-01

    A process is described for the production of an alloy consiting of 1 to 20% In, 0.5 to 15% Sm, and from 3 to 18% Hf, the balance being Ni. Such alloys show a good absorption capacity for thermal and intermediate neutrons, good neutron capture efficiency, and good corrosion resistance, and find application in nuclear reactor automatic control and safety systems. The Hf provides for the maintenance of a reasonably high order of neutron capture efficiency throughout the lifetime of a reactor. The alloys are formed in a vacuum furnace operating with an inert gas atmosphere at 280 to 300 mm.Hg. They have a corrosion resistance from 3 to 3.5 times that of the Ag-based alloys commonly employed, and a neutron capture efficiency about twice that of the Ag alloys. Castability and structural strength are good. (U.K.)

  8. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  9. ERM booster vaccination of Rainbow trout using diluted bacterin

    DEFF Research Database (Denmark)

    Schmidt, Jacob Günther; Henriksen, Niels H.; Buchmann, Kurt

    2016-01-01

    under laboratory conditions extend the protection period. The present field study investigated the applicability of the method under practical farming conditions (freshwater earth ponds supplied by stream water). Primary immersion vaccination of trout (3–4 g) for 30 s in Y. ruckeri bacterin (diluted 1......Enteric Red Mouth Disease ERM caused by Yersinia ruckeri infection is associated with morbidity and mortality in salmonid farming but immersion vaccination of fry may confer some protection for a number of months. Revaccination of rainbow trout, even by use of diluted ERM immersion vaccine, can......:10) in April 2015 was followed 3 months later (July 2015) by 1 h bathing of rainbow trout in bacterin (diluted 1:650 or 1:1700) in order to evaluate if this time saving vaccination methodology can improve immunity and protection. Trout were subjected in farms to natural Y. ruckeri exposure in June and July...

  10. Moderate Dilution of Copper Slag by Natural Gas

    Science.gov (United States)

    Zhang, Bao-jing; Zhang, Ting-an; Niu, Li-ping; Liu, Nan-song; Dou, Zhi-he; Li, Zhi-qiang

    2018-01-01

    To enable use of copper slag and extract the maximum value from the contained copper, an innovative method of reducing moderately diluted slag to smelt copper-containing antibacterial stainless steel is proposed. This work focused on moderate dilution of copper slag using natural gas. The thermodynamics of copper slag dilution and ternary phase diagrams of the slag system were calculated. The effects of blowing time, temperature, matte settling time, and calcium oxide addition were investigated. The optimum reaction conditions were identified to be blowing time of 20 min, reaction temperature of 1250°C, settling time of 60 min, CaO addition of 4% of mass of slag, natural gas flow rate of 80 mL/min, and outlet pressure of 0.1 MPa. Under these conditions, the Fe3O4 and copper contents of the residue were 7.36% and 0.50%, respectively.

  11. Thermal diffusion in dilute nanofluids investigated by photothermal interferometry

    International Nuclear Information System (INIS)

    Philip, J; Nisha, M R

    2010-01-01

    We have carried out a theoretical analysis of the dependence of the particle mass fraction on the thermal diffusivity of dilute suspensions of nanoparticles in liquids (dilute nanofluids). The analysis takes in to account adsorption of an ordered layer of solvent molecules around the nanoparticles. It is found that thermal diffusivity decreases with mass fraction for sufficiently small particle sizes. Beyond a critical particle size thermal diffusivity begins to increase with mass fraction for the same system. The results have been verified experimentally by measuring the thermal diffusivity of dilute suspensions of TiO 2 nanoparticles dispersed in polyvinyl alcohol (PVA) medium. The effect is attributed to Kapitza resistance of thermal waves in the medium.

  12. Multi-element isotope dilution analyses using ICP-MS

    International Nuclear Information System (INIS)

    Volpe, A.M.

    1996-01-01

    Presently, 37 elements ranging from light (Li,B) through transition metals, noble, rare earth and heavy elements, to actinides and transuranics (Pu, Am, Cm) are measured by isotope dilution at Lawrence Livermore National Laboratory. Projects range from geological and hydrological to biological. The research goal is to measure accurately many elements present in diverse matrices at trace (ppb) levels using isotope dilution methods. Major advantages of isotope dilution methods are accuracy, elimination of ion intensity calibration, and quantitation for samples that require chemical separation. Accuracy depends on tracer isotope calibration, tracer-sample isotopic equilibration, and appropriate background, isobaric and mass bias corrections. Propagation of isotope ratio error due to improper tracer isotope addition is a major concern with multi-element analyses when abundances vary widely. 11 refs., 3 figs

  13. Internal friction in Al alloys after neutron irradiation at low temperature

    International Nuclear Information System (INIS)

    Takamura, S.; Kobiyama, M.

    1985-01-01

    Internal friction and elastic modulus of dilute Al alloys have been measured after fast neutron irradiation at about 5 K. The internal friction spectra in Al-Pb, Al-Si, Al-Zn, Al-Ag, Al-Sn and Al-In are very similar. This result suggests that the configuration of the interstitial-solute atom complex in these alloys is very similar. In Al-Mg, the main complexes have the configuration with nearly symmetry, but its internal friction spectrum is different from that of the above-mentioned alloys. The internal friction spectra and their annealing behavior in Al-Be, Al-Mn, Al-Fe and Al-Cu demonstrate that the configuration of their interstitial-solute atom complex seems to be different from each other and the main complex in these alloys is immobile until stage III. (author)

  14. Local structure of disordered Au-Cu and Au-Ag alloys

    International Nuclear Information System (INIS)

    Frenkel, A. I.; Machavariani, V. Sh.; Rubshtein, A.; Rosenberg, Yu.; Voronel, A.; Stern, E. A.

    2000-01-01

    X-ray-absorption fine structure (XAFS) and x-ray-diffraction (XRD) measurements of disordered alloys Au x Cu 1-x and Au 0.5 Ag 0.5 prepared by melt spinning were performed. In the Au 0.5 Ag 0.5 alloy, no significant local deviations of the atoms from the average fcc lattice were detected while in Au x Cu 1-x alloys, significant deviations of atoms from the average fcc lattice were found. Mean-square vibrations of the Cu-Cu distances revealed by the XAFS in Au x Cu 1-x alloys indicate the weakening of contact between Cu atoms in the dilute limit. Our computer simulation for Au x Cu 1-x clusters of 10 5 atoms reproduces the main features of both the XAFS and XRD data

  15. Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

    Science.gov (United States)

    Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

    2016-04-01

    Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

  16. Alloying principles for magnesium base heat resisting alloys

    International Nuclear Information System (INIS)

    Drits, M.E.; Rokhlin, L.L.; Oreshkina, A.A.; Nikitina, N.I.

    1982-01-01

    Some binary systems of magnesium-base alloys in which solid solutions are formed, are considered for prospecting heat resistant alloys. It is shown that elements having essential solubility in solid magnesium strongly decreasing with temperature should be used for alloying maqnesium base alloys with high strength properties at increased temperatures. The strengthening phases in these alloys should comprise essential quantity of magnesium and be rather refractory

  17. Physical metallurgy of titanium alloys

    International Nuclear Information System (INIS)

    Collings, E.W.

    1988-01-01

    Researches in electric, magnetic, thermophysical properties of titanium alloys in the wide range of temperatures (from helium upto elevated one), as well as stability of phases in alloys of different types are generalized. Fundamental description of physical properties of binary model alloys is given. Acoustic emission, shape memory and Bauschinger effects, pseudoelasticity, aging and other aspects of physical metallurgy of titanium alloys are considered

  18. How Consumers’ Styles of Thinking Can Control Brand Dilution

    Directory of Open Access Journals (Sweden)

    Monga Alokparna Basu

    2018-05-01

    Full Text Available Understanding consumers’ ways of thinking can help identify strategies to limit brand damage and elicit more favorable reactions from disapproving consumers. Analytic thinkers’ beliefs about a brand are diluted when they see negative information; those of holistic thinkers remain unaffected. While both analytic and holistic thinkers blame the brand equally for quality and manufacturing problems, holistic thinkers are more likely to blame contextual factors outside of the brand than analytic thinkers. This ability of holistic thinkers to focus on the outside context is the reason why their brand beliefs are not diluted.

  19. Computer registration of radioactive indicator-dilution curves.

    Science.gov (United States)

    Shepherd, A P; Perry, M A; Alexander, G M; Granger, D N; Riedel, G L; Kvietys, P R; Franke, C P

    1983-12-01

    A system is described for recording indicator-dilution curves produced by gamma radiation-emitting tracers. The system consists of a flow-through cuvette in a well counter, appropriate commercially available gamma radiation-detecting equipment, an Apple II computer, and a two-channel pulse-counting interface of our own design. With the counting interface and the software described here, an investigator can simultaneously record two indicator-dilution curves produced by gamma emitters. Instead of having to wait hours or days for results, the investigator can watch the data being recorded and display the results in graphic form almost immediately after each injection.

  20. Dilution and volatilization of groundwater contaminant discharges in streams

    DEFF Research Database (Denmark)

    Aisopou, Angeliki; Bjerg, Poul Løgstrup; Sonne, Anne Thobo

    2015-01-01

    measurement. The solution was successfully applied to published field data obtained in a large and a small Danish stream and provided valuable information on the risk posed by the groundwater contaminant plumes. The results provided by the dilution and volatilization model are very different to those obtained......An analytical solution to describe dilution and volatilization of a continuous groundwater contaminant plume into streams is developed for risk assessment. The location of groundwater plume discharge into the stream (discharge through the side versus bottom of the stream) and different...

  1. Test plan for tank 241-AN-104 dilution studies

    International Nuclear Information System (INIS)

    Herting, D.L.

    1998-01-01

    Tank 241-AN-104 (104-AN) has been identified as the one of the first tanks to be retrieved for low level waste pretreatment and immobilization. Retrieval of the tank waste will require dilution. Laboratory tests are needed to determine the amount and type of dilution required for safe retrieval and transfer of feed and to re-dissolve major soluble sodium salts while not precipitating out other salts. The proposed laboratory tests are described in this document. Tank 241-AN-104 is on the Hydrogen Watch List

  2. Dynamics of dilute disordered models: A solvable case

    International Nuclear Information System (INIS)

    Semerjian, Guilhem; Cugliandolo, Leticia F.

    2003-09-01

    We study the dynamics of a dilute spherical model with two body interactions and random exchanges. We analyze the Langevin equations and we introduce a functional variational method to study generic dilute disordered models. A crossover temperature replaces the dynamic transition of the fully-connected limit. There are two asymptotic regimes, one determined by the central band of the spectral density of the interactions and a slower one determined by localized configurations on sites with high connectivity. We confront the behavior of this model to the one of real glasses. (author)

  3. Introduction to the Physics of Diluted Magnetic Semiconductors

    CERN Document Server

    Gaj, Jan A

    2010-01-01

    The book deals with diluted magnetic semiconductors, a class of materials important to the emerging field of spintronics. In these materials semiconducting properties, both transport and optical, are influenced by the presence of magnetic ions. It concentrates on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions) and resulting phenomena (e.g. magnetic polaron formation and spin relaxation). Introduction to the Physics of Diluted Magnetic Semiconductors is addressed to graduate-level and doctoral students and young researchers entering the field. The authors have been actively involved in the creation of this branch of semiconductor physics.

  4. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    Science.gov (United States)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

  5. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  6. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  7. Technetium and technetium alloys

    International Nuclear Information System (INIS)

    Ijdo, W.L.

    1993-10-01

    This report presents the results of a literature survey on technetium and technetium alloys. The literature has been searched through 1993. The survey was focused on technetium and (binary cubic) technetium alloys, but other important information on technetium has not been omitted from this survey. This report has been written with the aim to collect more information about phase systems which could be of importance in the transmutation process by neutrons of technetium. With the information presented in this report, it should be possible to select a suitable technetium alloy for further investigation regarding to the transmutation process. (orig.)

  8. Low-field susceptibilities of rare-earth spin glass alloys

    International Nuclear Information System (INIS)

    Sarkissian, B.V.B.

    1978-01-01

    The low-field AC susceptibilities of the dilute rare-earth spin glass alloys Sc-Gd, Sc-Tb, Pr-Tb and Pr-Gd are reported and compared with low-field DC susceptibilities of the same samples. The similarities between their behaviour and that of Au-Fe spin glass alloys is also considered. When single-ion anisotropy is important, this can cause a dramatic broadening of the sharp peak. Broadening in the AC peak has also observed as the frequency of the deriving field is increased. These data can be qualitatively discussed in terms of a recent magnetic-cluster model for spin glasses. (author)

  9. Sealing of Anodised Aluminium Alloys with Rare Earth Metal Salt Solutions

    OpenAIRE

    Mansfield, C.; Chen, F.; Breslin, Carmel B.; Dull, D.

    1998-01-01

    Boric‐sulfuric acid anodized (BSAA) aluminum alloys have been sealed in hot solutions of cerium or yttrium salts. For comparison, sealing has also been performed in the presently used dilute chromate solution, boiling water, and a cold nickel fluoride solution. The corrosion resistance of the sealed BSAA Al alloys Al 2024, Al 6061, and Al 7075 has been evaluated by recording impedance spectra during exposure in 0.5 N NaCl for 7 days. Shorter or longer exposure times have also been used depend...

  10. Order-disorder transformation in the Ni-4.49 at.% Al alloy

    International Nuclear Information System (INIS)

    Adorno, A.T.; Garlipp, W.; Cilense, M.; Silva, R.A.G.

    2006-01-01

    The order-disorder transformation in the Ni-4.49 at.% Al alloy was studied using electrical resistivity measurements, microhardness measurements, differential scanning calorimetry (DSC) and transmission electron microscopy (TEM). The results confirmed the ordering behavior expected for Ni-Al dilute alloys and the suggested relation between resistivity changes and microhardness changes with anti-ferromagnetic spin ordering. The higher value obtained for the activation energy of vacancy migration was associated with a decrease in the Al concentration gradient near solute-depleted regions

  11. Determination of Nb and Zr in U-Nb-Zr alloys by ICP-AES

    International Nuclear Information System (INIS)

    Wang Cuiping; Dong Shizhe; Li Lin; He Meiying

    2003-01-01

    The U-Nb-Zr alloy sample is dissolved by HNO 3 , H 2 O 2 and HF, and the contents of Nb and Zr in the sample are determined on the JY-70 II type ICP-AES by using the internal standard synchronous dilution method. The range of determination is 1%-10% and 0.33%-3.33%, respectively for Nb and Zr. The relative standard deviation is better than 3.2% for Nb, and 2.5% for Zr. The method is rapid and convenient for determining Nb and Zr in U-Nb-Zr alloy sample

  12. post-jomtien policy dilutions: infrastructural & quality norms

    Indian Academy of Sciences (India)

    Operation Blackboard norms diluted – from 3 teachers-3 rooms per primary school to 2 teachers-2 rooms per primary school. Regular teacher replaced by under-qualified, untrained, under-paid Para-teachers appointed on short-term contracts. EGS – No provision for school buildings or teaching aids. Multi-grade Teaching ...

  13. Coherence and stiffness of spin waves in diluted ferromagnets

    Czech Academy of Sciences Publication Activity Database

    Turek, Ilja; Kudrnovský, Josef; Drchal, Václav

    2016-01-01

    Roč. 94, č. 17 (2016), č. článku 174447. ISSN 2469-9950 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68081723 ; RVO:68378271 Keywords : spin wave s * diluted ferromagnets * disordered systems Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  14. Procedures for accurately diluting and dispensing radioactive solutions

    International Nuclear Information System (INIS)

    1975-01-01

    The technique currently used by various laboratories participating in international comparisons of radioactivity measurements are surveyed and recommendations for good laboratory practice established. Thus one describes, for instance, the preparation of solutions, dilution techniques, the use of 'pycnometers', weighing procedures (including buyoancy correction), etc. It should be possible to keep random and systematic uncertainties below 0.1% of the final result

  15. A simple approximation method for dilute Ising systems

    International Nuclear Information System (INIS)

    Saber, M.

    1996-10-01

    We describe a simple approximate method to analyze dilute Ising systems. The method takes into consideration the fluctuations of the effective field, and is based on a probability distribution of random variables which correctly accounts for all the single site kinematic relations. It is shown that the simplest approximation gives satisfactory results when compared with other methods. (author). 12 refs, 2 tabs

  16. Determination of dilution and quality control of total and anti ...

    African Journals Online (AJOL)

    Objective: To determine the correct dilution and Quality control commercial ELISA of total and anti-measles antibodies for HIV infected pregnant women. Design: A laboratory based study. Setting: The University of Nairobi, Department of Paediatrics laboratory. Subjects: HIV infected pregnant women enrolled and exposed to ...

  17. Quality of potential harmonics expansion method for dilute Bose ...

    Indian Academy of Sciences (India)

    Abstract. We present and examine an approximate but ab initio many-body approach, viz., potential harmonics expansion method (PHEM), which includes two-body correla- tions for dilute Bose–Einstein condensates. Comparing the total ground state energy for three trapped interacting bosons calculated in PHEM with the ...

  18. Bioethanol productions from rice polish by optimization of dilute acid ...

    African Journals Online (AJOL)

    Lignocellulose materials are abundant renewable resource for the production of biofuel from fermentative organism (Sacchromyces cervesiae). Rice polish is cheapest and abundant lignocelluloses resource and has potential to produce bioethanol. The main steps for the conversion of biomass into glucose required dilute ...

  19. Inhibition Effect of Deanol on Mild Steel Corrosion in Dilute ...

    African Journals Online (AJOL)

    NICOLAAS

    2014-06-23

    Jun 23, 2014 ... The influence of deanol on the corrosion behaviour of mild steel in dilute sulphuric acid with sodium ... the formation of a complex precipitate of protective film, which ... silicon carbide abrasive papers of 80, 120, 220, 800 and 1000 grit ...... ions in sulphuric acid on the corrosion behaviour of stainless steel,.

  20. Kinetic-sound propagation in dilute gas mixtures

    International Nuclear Information System (INIS)

    Campa, A.; Cohen, E.G.D.

    1989-01-01

    Kinetic sound is predicted in dilute disparate-mass binary gas mixtures, propagating exclusively in the light compound and much faster than ordinary sound. It should be detectable by light-scattering experiments, as an extended shoulder in the scattering cross section for large frequencies. As an example, H 2 -Ar mixtures are discussed