WorldWideScience

Sample records for depositing thin films

  1. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  2. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  3. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  4. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  5. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  6. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  7. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  8. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  9. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  10. Pulsed laser deposition of ferroelectric thin films

    Science.gov (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  11. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  12. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  13. Pulsed laser deposition of pepsin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kecskemeti, G. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: kega@physx.u-szeged.hu; Kresz, N. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Smausz, T. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Nogradi, A. [Department of Ophthalmology, University of Szeged, H-6720, Szeged, Koranyi fasor 10-11 (Hungary)

    2005-07-15

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ({lambda} = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm{sup 2}. The pressure in the PLD chamber was 2.7 x 10{sup -3} Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm{sup 2}. The protein digesting capacity of the transferred pepsin was tested by adapting a modified 'protein cube' method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  14. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  15. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  16. Bismuth thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  17. Resonant infrared pulsed laser deposition of thin biodegradable polymer films

    DEFF Research Database (Denmark)

    Bubb, D.M.; Toftmann, B.; Haglund Jr., R.F.

    2002-01-01

    Thin films of the biodegradable polymer poly(DL-lactide-co-glycolide) (PLGA) were deposited using resonant infrared pulsed laser deposition (RIR-PLD). The output of a free-electron laser was focused onto a solid target of the polymer, and the films were deposited using 2.90 (resonant with O-H str...

  18. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.

    1978-03-01

    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  19. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  20. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  1. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo

    2011-01-01

    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  2. Characterization of polymer thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Palla-Papavlu, A.; Dinca, V.; Ion, V.; Moldovan, A.; Mitu, B.; Luculescu, C.; Dinescu, M.

    2011-04-01

    The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate). The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. It was found that for laser fluences up to 1.5 J/cm 2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm 2 the polyepichlorohydrin films present deviations from the bulk polymer. Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm 2). The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material. The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.

  3. Spatial atomic layer deposition of zinc oxide thin films

    NARCIS (Netherlands)

    Illiberi, A.; Roozeboom, F.; Poodt, P.W.G.

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and mo

  4. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  5. ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsoutsouva, M.G. [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Panagopoulos, C.N., E-mail: chpanag@metal.ntua.gr [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Papadimitriou, D. [National Technical University of Athens, Department of Physics, GR-15780 Athens (Greece); Fasaki, I.; Kompitsas, M. [Theor. and Phys./Chem. Institute, National Hellenic Research Foundation, 48 Vas. Konstantinou Ave., 11635 Athens (Greece)

    2011-04-15

    Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality polycrystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 deg. C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.

  6. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  7. Deposition of copper selenide thin films and nanoparticles

    Science.gov (United States)

    Hu, Yunxiang; Afzaal, Mohammad; Malik, Mohammad A.; O'Brien, Paul

    2006-12-01

    A new method is reported for the growth of copper selenide thin films and nanoparticles using copper acetylacetonate and trioctylphosphine selenide. Aerosol-assisted chemical vapor deposition experiments lead to successful deposition of tetragonal Cu 2Se films. In contrast, hexadecylamine capped nanoparticles are composed of cubic Cu 2-xSe. The deposited materials are optically and structurally characterized. The results of this comprehensive study are described and discussed.

  8. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Science.gov (United States)

    Carlier, Thibault; Saitzek, Sébastien; Méar, François O.; Blach, Jean-François; Ferri, Anthony; Huvé, Marielle; Montagne, Lionel

    2017-03-01

    In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  9. Luminescent thin films by the chemical aerosol deposition technology (CADT)

    NARCIS (Netherlands)

    Martin, F.J.; Martin, F.J.; Albers, H.; Lambeck, Paul; Popma, T.J.A.; van de Velde, G.M.H.

    1992-01-01

    Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers

  10. Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-01-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO3 thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was

  11. Characterization and Electrical Properties of TiO2 Thin Films Deposited by Pulsed Laser Deposition

    Science.gov (United States)

    Badar, Nurhanna; Kamarulzaman, Norlida

    2011-12-01

    Thin film technology is very important in today's high-tech industry. TiO2 is a high-k dielectric material. Problems with thin film deposition arise when the thickness of the thin layers approaches a few hundred nm to less than 100 nm. High quality thin films within these dimensions are difficult to obtain. Issues of adhesion, crystal mismatch, crystal orientation, surface roughness, densification, etc. are problems that need to be addressed if good quality thin films for devices are to be fabricated. These factors have a relation with the thin film technique used. As an example, spin coating technique may be a cheaper technique but may not result in dense and very smooth surfaces. Pulsed LASER deposition (PLD) is a relatively newer method used in thin film fabrication. The advantages of PLD are, capability of very thin films being deposited on different types of substrates (up to monolayers), control of crystal orientation, capability of depositing materials with complex stoichiometry and ease of methodology with high throughput. This has industrial implications as a good method for thin film preparation. This work involves the deposition of TiO2 thin films using different deposition parameters and chamber environments.

  12. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  13. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  14. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  15. Continuous wave infrared laser deposition of organic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yaginuma, Seiichiro [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Yamaguchi, Jun [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Haemori, Masamitsu [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Itaka, Kenji [Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univesity of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8568 (Japan); Matsumoto, Yuji [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Kondo, Michio [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Koinuma, Hideomi [Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univesity of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8568 (Japan)

    2007-04-15

    We developed a continuous-wave infrared laser molecular beam epitaxy (CW-IR-LMBE) optimized for the fabrication of organic semiconductor films. The crystal quality of these organic thin films deposited by CW-IR-LMBE was substantially the same as those deposited by thermal evaporation. Due to the possibility of quick switching of evaporation sources, CW-IR-LMBE is especially advantageous for rapid screening of composition, thickness, and fabrication parameters in materials and device optimization based on combinatorial technology.

  16. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  17. Thin film zinc oxide deposited by CVD and PVD

    Science.gov (United States)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  18. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  19. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  20. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  1. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  2. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  3. Microreactor-Assisted Solution Deposition for Compound Semiconductor Thin Films

    Directory of Open Access Journals (Sweden)

    Chang-Ho Choi

    2014-05-01

    Full Text Available State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

  4. Iridium thin films deposited via pulsed laser deposition for future applications as transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Galeazzi, M. E-mail: galeazzi@physics.miami.edu; Chen, C.; Cohn, J.L.; Gundersen, J.O

    2004-03-11

    The University of Miami has recently started developing and studying high-resolution microcalorimeters operating near 100 mK for X-ray and particle physics and astrophysics. These detectors will be based on Transition Edge Sensors technology fabricated using iridium thin films deposited via the Pulsed Laser Deposition technique. We report here the preliminary result of the room temperature characterization of the Ir thin films, and an overview of future plans to use the films as transition edge sensors.

  5. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  6. Sputter deposited Terfenol-D thin films for multiferroic applications

    Directory of Open Access Journals (Sweden)

    K. P. Mohanchandra

    2015-09-01

    Full Text Available In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011 cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10−6.

  7. Sputter deposited Terfenol-D thin films for multiferroic applications

    Science.gov (United States)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  8. Stress development during deposition of CNx thin films

    Science.gov (United States)

    Broitman, E.; Zheng, W. T.; Sjöström, H.; Ivanov, I.; Greene, J. E.; Sundgren, J.-E.

    1998-05-01

    We have investigated the influence of deposition parameters on stress generation in CNx (0.3thin films deposited onto Si(001) substrates by reactive magnetron sputtering of C in pure N2 discharges. Film stress, σ, which in all cases is compressive, decreases with an increase in the N2 pressure, PN2, due to structural changes induced by the pressure-dependent variation in the average energy of particles bombarding the film during deposition. The film stress σ is also a function of the film growth temperature, Ts, and exhibits a maximum value of ˜5 GPa at 350 °C. Under these conditions, the films have a distorted microstructure consisting of a three-dimensional, primarily sp2 bonded, network. In contrast, films deposited at Ts<200 °C with a low stress are amorphous. At 350 °Cfilms grown at 350 °C exhibit the highest hardness and elasticity.

  9. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  10. Effective conductivity of chemically deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Robles, M. [Universidad Autonoma del Estado de Morelos (UAEM), Cuernavaca (Mexico). Fac. de Ciencias; Tagueena-Martinez, J. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar; Del Rio, J.A. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar

    1997-01-30

    Chemically deposited thin films have multiple applications. However, as a result of their complex structure, their physical properties are very difficult to predict. In this paper, we use an effective medium approach to model these heterogeneous systems. We extend Thorpe`s formula for the effective electrical conductivity of elliptical holes randomly distributed in a matrix to a system composed of conducting ellipses in a conducting matrix. This extension is used to calculate the effective electrical conductivity of polycrystalline chemically deposited ZnO thin films. We compare experimental results obtained by two different deposition methods: spray pyrolysis and successive ion layer adsorption and reaction (SILAR) reported here. We select the elliptical geometric parameters from microstructural data. Good agreement between the experimental measurements and our calculation is obtained. In addition, we present a new proof of the reciprocity theorem used to derive the theoretical relation. (orig.)

  11. Magnetic Phases of Sputter Deposited Thin-Film Erbium

    Science.gov (United States)

    Witt, J. D. S.; Cooper, J. F. K.; Satchell, N.; Kinane, C. J.; Curran, P. J.; Bending, S. J.; Langridge, S.; Heyderman, L. J.; Burnell, G.

    2016-12-01

    We present a detailed structural and magnetic characterization of sputter deposited thin film erbium, determined by x-ray diffraction, transport measurements, magnetometry and neutron diffraction. This provides information on the onset and change of the magnetic state as a function of temperature and applied magnetic field. Many of the features of bulk material are reproduced. Also of interest is the identification of a conical magnetic state which repeats with a wavevector parallel to the c axis τc = 4/17 in units of the reciprocal lattice parameter c*, which is a state not observed in any other thin film or bulk measurements. The data from the various techniques are combined to construct magnetic field, temperature (H, T)–phase diagrams for the 200 nm-thick Er sample that serves as a foundation for future exploitation of this complex magnetic thin film system.

  12. Deposition of antimony telluride thin film by ECALE

    Institute of Scientific and Technical Information of China (English)

    GAO; Xianhui; YANG; Junyou; ZHU; Wen; HOU; Jie; BAO; Siqian; FAN; Xi'an; DUAN; Xingkai

    2006-01-01

    The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.

  13. Shallow bath chemical deposition of CdS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Y.S. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Choubey, R.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi, 835 215 (India); Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China); Yu, W.C. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Hsu, W.T. [Green Energy and Environmental Research Laboratory, Industrial Technology Research Institute, Hsin-Chu, Taiwan (China); Lan, C.W., E-mail: cwlan@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)

    2011-10-31

    Cadmium sulfide thin film was grown by shallow chemical bath deposition technique. This technique used a highly conducted hot plate to heat the substrate, while using a shallow bath for higher thermal gradients. As a result, large area uniformity could be achieved and the homogeneous nucleation was suppressed. More importantly, the solution used was greatly reduced, which is crucial for cost reduction in practice. The effects of temperature and shaking on the growth kinetics and film properties were investigated. The reaction activation energy was obtained to be 0.84 eV, and was not affected much by shaking indicating that the deposition is essentially reaction controlled. Furthermore, the films deposited at low or high temperature conditions had better photoconductivity.

  14. Deposition of Cadmium Sulphide Thin Films by Photochemical Deposition and Characterization

    Directory of Open Access Journals (Sweden)

    H.L. Pushpalatha

    2015-03-01

    Full Text Available Deposition of cadmium sulphide (CdS thin films on glass substrates in acidic medium by photochemical deposition (PCD and studies by several characterizations are presented. The structural characterization of the thin films was carried out by XRD. The elemental composition of the thin films was carried out by EDAX. The optical properties have been studied in the wavelength range 200-900 nm and the optical transition has been found to be direct and allowed. The morphological properties are studied by AFM and electrical properties are studied by four probe technique.

  15. Nanoparticle formation and thin film deposition in aniline containing plasmas

    Science.gov (United States)

    Pattyn, Cedric; Dias, Ana; Hussain, Shahzad; Strunskus, Thomas; Stefanovic, Ilija; Boulmer-Leborgne, Chantal; Lecas, Thomas; Kovacevic, Eva; Berndt, Johannes

    2016-09-01

    This contribution deals with plasma based polymerization processes in mixtures of argon and aniline. The investigations are performed in a capacitively coupled RF discharge (in pulsed and continuous mode) and concern both the observed formation of nanoparticles in the plasma volume and the deposition of films. The latter process was used for the deposition of ultra-thin layers on different kind of nanocarbon materials (nanotubes and free standing graphene). The analysis of the plasma and the plasma chemistry (by means of mass spectroscopy and in-situ FTIR spectroscopy) is accompanied by several ex-situ diagnostics of the obtained materials which include NEXAFS and XPS measurements as well as Raman spectroscopy and electron microscopy. The decisive point of the investigations concern the preservation of the original monomer structure during the plasma polymerization processes and the stability of the thin films on the different substrates.

  16. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  17. Nanostructured zinc oxide thin film by simple vapor transport deposition

    Science.gov (United States)

    Athma, P. V.; Martinez, Arturo I.; Johns, N.; Safeera, T. A.; Reshmi, R.; Anila, E. I.

    2015-09-01

    Zinc oxide (ZnO) nanostructures find applications in optoelectronic devices, photo voltaic displays and sensors. In this work zinc oxide nanostructures in different forms like nanorods, tripods and tetrapods have been synthesized by thermal evaporation of zinc metal and subsequent deposition on a glass substrate by vapor transport in the presence of oxygen. It is a comparatively simpler and environment friendly technique for the preparation of thin films. The structure, morphology and optical properties of the synthesized nanostructured thin film were characterized in detail by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The film exhibited bluish white emission with Commission International d'Eclairage (CIE) coordinates x = 0.22, y = 0.31.

  18. Spray pyrolysis deposition of indium sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Otto, K.; Katerski, A.; Mere, A.; Volobujeva, O.; Krunks, M., E-mail: malle@staff.ttu.e

    2011-03-01

    In{sub 2}S{sub 3} thin films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. Aqueous solutions containing InCl{sub 3} and SC(NH{sub 2}){sub 2} at a molar ratio of In/S = 1/3 and 1/6 were deposited onto preheated glass sheets at substrate temperatures T{sub s} = 205-410 {sup o}C. The obtained films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM,) optical transmission spectra, X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). According to XRD, thin films deposited at T{sub s} = 205-365 {sup o}C were composed of the (0 0 12) orientated tetragonal {beta}-In{sub 2}S{sub 3} phase independent of the In/S ratio in the spray solution. Depositions performed at T{sub s} = 410 {sup o}C led to the formation of the In{sub 2}O{sub 3} phase, preferably when the 1/3 solution was sprayed. Post-deposition annealing in air indicated that oxidation of the sulphide phase has a minor role in the formation of In{sub 2}O{sub 3} at temperatures up to 450 {sup o}C. In{sub 2}S{sub 3} films grown at T{sub s} below 365 {sup o}C exhibited transparency over 70% in the visible spectral region and E{sub g} of 2.90-2.96 eV for direct and 2.15-2.30 eV for indirect transitions, respectively. Film thickness and chlorine content decreased with increasing deposition temperatures. The XPS study revealed that the In/S ratio in the spray solution had a significant influence on the content of oxygen (Me-O, BE = 530.0 eV) in the In{sub 2}S{sub 3} films deposited in the temperature range of 205-365 {sup o}C. Both XPS and EDS studies confirmed that oxygen content in the films deposited using the solution with the In/S ratio of 1/6 was substantially lower than in the films deposited with the In/S ratio of 1/3.

  19. Fabrication and characterization of vacuum deposited fluorescein thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jalkanen, Pasi, E-mail: pasi.jalkanen@gmail.co [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kulju, Sampo, E-mail: sampo.j.kulju@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Arutyunov, Konstantin, E-mail: konstantin.arutyunov@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Antila, Liisa, E-mail: liisa.j.antila@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Myllyperkioe, Pasi, E-mail: pasi.myllyperkio@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Ihalainen, Teemu, E-mail: teemu.o.ihalainen@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kaeaeriaeinen, Tommi, E-mail: tommi.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Kaeaeriaeinen, Marja-Leena, E-mail: marja-leena.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Korppi-Tommola, Jouko, E-mail: jouko.korppi-tommola@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland)

    2011-03-31

    Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO{sub 2} coating. Surface topology, absorption and emission spectra of the films depend on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially forms islands before merging into a uniform layer after 5 to 10 monolayers. On FTO covered glass the absorption spectra are similar to fluorescein solution in ethanol. Absorption spectra on ALD-TiO{sub 2} is red shifted compared to the film deposited on bare FTO. The corresponding emission spectra at {lambda} = 458 nm excitation show various thickness and substrate dependent features, while the emission of films deposited on TiO{sub 2} is quenched due to the effective electron transfer to the semiconductor conduction band.

  20. Production of selective membranes using plasma deposited nanochanneled thin films

    Directory of Open Access Journals (Sweden)

    Rodrigo Amorim Motta Carvalho

    2006-12-01

    Full Text Available The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1 permeation of polar organic compounds and/or water in gaseous phase and 2 permeation of salt in liquid phase. The efficiency of permeation was tested using a quartz crystal microbalance (QCM technique in gas phase and conductimetric analysis (CA in liquid phase. The substrates used were: silicon for characterization of the deposited films, piezoelectric quartz crystals for tests of selective membranes and cellophane paper for tests of permeation. QCM analysis showed that the nanochannels allow the adsorption and/or permeation of polar organic compounds, such as acetone and 2-propanol, and water. CA showed that the films allow salt permeation after an inhibition time needed for hydrolysis of the organic radicals within the film. Due to their characteristics, the films can be used for grains protection against microorganism proliferation during storage without preventing germination.

  1. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-01-01

    The rarefied gas jet of aluminium is studied at Mach number Ma =(U_j /√{ kbTj / m }) in the range .01 mass and diameter, and kb is the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn =0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number ,which allows scattering collisions to rapidly direct the atoms to the substrate.

  2. Chemical bath deposition and characterization of Cu2O-CuxS thin films

    OpenAIRE

    EYA, D. D. O.

    2010-01-01

    Cu2O-CuxS thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (CuxS) on Copper (I) Oxide (Cu2O) and then Cu2O on CuxS. The peak solar transmittance across the thin films were found to be

  3. YBCO thin film evaporation on as-deposited silver film on MgO

    Science.gov (United States)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  4. Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

    Science.gov (United States)

    Anna M. Clausen; Deborah M. Paskiewicz; Alireza Sadeghirad; Joseph Jakes; Donald E. Savage; Donald S. Stone; Feng Liu; Max G. Lagally

    2014-01-01

    Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in bulk substrates, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon...

  5. Pulsed laser deposition of fluoride glass thin films

    Science.gov (United States)

    Ganser, Dimitri; Gottmann, Jens; Mackens, Uwe; Weichmann, Ulrich

    2010-11-01

    The development of integrated waveguide lasers for different applications such as marking, illumination or medical technology has become highly desirable. Diode pumped planar waveguide lasers emitting in the green visible spectral range, e.g. thin films from praseodymium doped fluorozirconate glass matrix (called ZBLAN, owing to the main components ZrF 4, BaF 2, LaF 3, AlF 3 and NaF) as the active material pumped by a blue laser diode, have aroused great interest. In this work we have investigated the deposition of Pr:ZBLAN thin films using pulsed laser radiation of λ = 193 and λ = 248 nm. The deposition has been carried out on MgF 2 single crystal substrates in a vacuum chamber by varying both processing gas pressure and energy fluence. The existence of an absorption line at 210 nm in Pr:ZBLAN leads to absorption and radiative relaxation of the absorbed laser energy of λ = 193 nm preventing the evaporation of target material. The deposited thin films consist of solidified and molten droplets and irregular particulates only. Furthermore, X-ray radiation has been applied to fluoride glass targets to enhance the absorption in the UV spectral region and to investigate the deposition of X-ray treated targets applying laser radiation of λ = 248 nm. It has been shown that induced F-centres near the target surface are not thermally stable and can be easily ablated. Therefore, λ = 248 nm is not suitable for evaporation of Pr:ZBLAN.

  6. Pulsed laser deposition of fluoride glass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ganser, Dimitri, E-mail: dimitri.ganser@llt.rwth-aachen.de [Chair for Laser Technology LLT, RWTH Aachen University, Steinbachstr. 15, D-52074 Aachen (Germany); Gottmann, Jens [Chair for Laser Technology LLT, RWTH Aachen University, Steinbachstr. 15, D-52074 Aachen (Germany); Mackens, Uwe; Weichmann, Ulrich [Philips Research Laboratories, Weisshausstrasse 2, D-52066 Aachen (Germany)

    2010-11-15

    The development of integrated waveguide lasers for different applications such as marking, illumination or medical technology has become highly desirable. Diode pumped planar waveguide lasers emitting in the green visible spectral range, e.g. thin films from praseodymium doped fluorozirconate glass matrix (called ZBLAN, owing to the main components ZrF{sub 4}, BaF{sub 2}, LaF{sub 3}, AlF{sub 3} and NaF) as the active material pumped by a blue laser diode, have aroused great interest. In this work we have investigated the deposition of Pr:ZBLAN thin films using pulsed laser radiation of {lambda} = 193 and {lambda} = 248 nm. The deposition has been carried out on MgF{sub 2} single crystal substrates in a vacuum chamber by varying both processing gas pressure and energy fluence. The existence of an absorption line at 210 nm in Pr:ZBLAN leads to absorption and radiative relaxation of the absorbed laser energy of {lambda} = 193 nm preventing the evaporation of target material. The deposited thin films consist of solidified and molten droplets and irregular particulates only. Furthermore, X-ray radiation has been applied to fluoride glass targets to enhance the absorption in the UV spectral region and to investigate the deposition of X-ray treated targets applying laser radiation of {lambda} 248 nm. It has been shown that induced F-centres near the target surface are not thermally stable and can be easily ablated. Therefore, {lambda} = 248 nm is not suitable for evaporation of Pr:ZBLAN.

  7. Reactive sputtering deposition of SiO2 thin films

    Directory of Open Access Journals (Sweden)

    IVAN RADOVIC

    2008-01-01

    Full Text Available SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6–2×10-4 mbar and of the ion beam current on the target (1.67–6.85 mA. The argon partial pressure during operation of the ion gun was 1×10-3 mbar. The substrate temperature was held at 550 °C and the films were deposited to a thickness of 12.5–150 nm, at a rate from 0.0018–0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis. Reactive sputtering was proved to be efficient for the deposition of silica at 550 °C, an oxygen partial pressure of 2×10-4 mbar (ion beam current on the target of 5 mA or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6×10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

  8. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Kangkan Sarmah; Ranjan Sarma

    2009-08-01

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the energy of incident illumination, which results in the existence of two distinct trap levels. In each trap depth the energy of the trap increases linearly. It infers that there is a linear distribution of traps of different energies below the conduction band.

  9. Reactive pulsed laser deposition of gold nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P. [University of Salento, Department of Physics, 73100 Lecce (Italy); Fernandez, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Leggieri, G. [University of Salento, Department of Physics, 73100 Lecce (Italy)]. E-mail: leggieri@le.infn.it; Luches, A. [University of Salento, Department of Physics, 73100 Lecce (Italy); Martino, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Romano, F. [University of Salento, Department of Physics, 73100 Lecce (Italy); Tunno, T. [University of Salento, Department of Physics, 73100 Lecce (Italy); Valerini, D. [University of Salento, Department of Physics, 73100 Lecce (Italy); Verdyan, A. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Soifer, Y.M. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Azoulay, J. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Meda, L. [IGD Polimeri Europa S.p.A, Novara (Italy)

    2007-07-31

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N{sub 2} or NH{sub 3}). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 deg. C. Film resistivity was measured using a four-point probe and resulted in the (4-20) x 10{sup -8} {omega} m range, depending on the ambient pressure, to be compared with the value 2.6 x 10{sup -8} {omega} m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N{sub 2} phase. All these measurements point to the formation of the gold nitride phase.

  10. Reactive pulsed laser deposition of gold nitride thin films

    Science.gov (United States)

    Caricato, A. P.; Fernàndez, M.; Leggieri, G.; Luches, A.; Martino, M.; Romano, F.; Tunno, T.; Valerini, D.; Verdyan, A.; Soifer, Y. M.; Azoulay, J.; Meda, L.

    2007-07-01

    We report on the growth and characterization of gold nitride thin films on Si substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N 2 or NH 3). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10 -8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10 -8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N 2 phase. All these measurements point to the formation of the gold nitride phase.

  11. Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    M. Moreno

    2016-01-01

    Full Text Available Cadmium sulfide (CdS thin films were deposited by chemical bath deposition (CBD onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs. MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF. An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate. These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

  12. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  13. Competing magnetic anisotropies in obliquely deposited thin permalloy film

    Energy Technology Data Exchange (ETDEWEB)

    Belyaev, B.A. [Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Reshetnev Siberian State Aerospace University, 31, pr. Imeni Gazety “Krasnoyarskii Rabochii”, Krasnoyarsk 660014 (Russian Federation); Izotov, A.V. [Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Solovev, P.N., E-mail: platon.solovev@gmail.com [Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation)

    2016-01-15

    Distribution of the magnetic anisotropy in thin film prepared by thermal vacuum oblique deposition of permalloy with small off-normal angle of incident in the presence of an external magnetic field has been studied by ferromagnetic resonance technique. On local area of the sample, a mutual compensation of near orthogonal in-plane uniaxial magnetic anisotropies induced by oblique deposition and by applied magnetic field has been found. Moreover, in addition to the uniaxial (twofold) magnetic anisotropy, fourfold and sixfold magnetic anisotropies have been observed in the sample. To explain the obtained high-order anisotropies, we assumed that the sample has exchange coupled adjacent regions or phases with different parameters of magnetic anisotropy. The results of the micromagnetic analysis of a two-layer model of the sample confirm the hypothesis.

  14. Short review on chemical bath deposition of thin film and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  15. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  16. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    OpenAIRE

    SALL, THIERNO; Marí Soucase, Bernabé; Mollar García, Miguel Alfonso; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optic...

  17. Atomistic study of deposition process of Al thin film on Cu substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yongzhi, E-mail: yzcaohit@gmail.com [Center for Precision Engineering, Harbin Institute of Technology, Harbin (China); Zhang Junjie; Sun Tao; Yan Yongda; Yu Fuli [Center for Precision Engineering, Harbin Institute of Technology, Harbin (China)

    2010-08-01

    In this paper we report molecular dynamics based atomistic simulations of deposition process of Al atoms onto Cu substrate and following nanoindentation process on that nanostructured material. Effects of incident energy on the morphology of deposited thin film and mechanical property of this nanostructured material are emphasized. The results reveal that the morphology of growing film is layer-by-layer-like at incident energy of 0.1-10 eV. The epitaxy mode of film growth is observed at incident energy below 1 eV, but film-mixing mode commences when incident energy increase to 10 eV accompanying with increased disorder of film structure, which improves quality of deposited thin film. Following indentation studies indicate deposited thin films pose lower stiffness than single crystal Al due to considerable amount of defects existed in them, but Cu substrate is strengthened by the interface generated from lattice mismatch between deposited Al thin film and Cu substrate.

  18. Atomic layer deposition of copper sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Nathanaelle, E-mail: n.schneider@chimie-paristech.fr; Lincot, Daniel; Donsanti, Frédérique

    2016-02-01

    Atomic Layer Deposition (ALD) of copper sulfide (Cu{sub x}S) thin films from Cu(acac){sub 2} (acac = acetylacetonate = 2,4-pentanedionate) and H{sub 2}S as Cu and S precursors is reported. Typical self-saturated reactions (“ALD window”) are obtained in the temperature range T{sub dep} = 130–200 °C for an average growth per cycle (GR) = 0.25 Å/cycle. The morphology, crystallographic structure, chemical composition, electrical properties and optical band gap of thin films were investigated using scanning electronic microscopy (SEM), X-ray diffraction under Grazing Incidence conditions (GI-XRD), X-ray reflectivity (XRR), energy dispersive spectrometry (EDS), Hall effect measurements, and UV–vis spectroscopy. The obtained copper sulfide films are heavily p-doped (charge carrier concentration ~ 10{sup 21} –10{sup 22} cm{sup −3}) with optical band gaps in the range of 2.2–2.5 eV for direct and 1.6–1.8 eV for indirect band gaps. Depending on the number of ALD cycles, multiphase compounds (made of digenite Cu{sub 1.8}S, chalcocite Cu{sub 2}S, djurleite Cu{sub 31}S{sub 16} and covellite CuS) or single-phase digenite Cu{sub 1.8}S films are obtained via a growth mechanism that involves in-situ copper reduction and loss of sulfur by evaporation. - Highlights: • Cu{sub x}S films were synthesized by atomic layer deposition from Cu(acac){sub 2} and H{sub 2}S. • Self-saturated reactions at T{sub dep} = 130–200 °C for growth = 0.25 Å/cycle • Multi- or single- phase films are obtained depending on the number of cycles. • Growth mechanism involves copper reduction and loss of sulfur by evaporation.

  19. Vapor-deposited thin films with negative real refractive index in the visible regime.

    Science.gov (United States)

    Jen, Yi-Jun; Lakhtakia, Akhlesh; Yu, Ching-Wei; Lin, Chin-Te

    2009-05-11

    A thin film comprising parallel tilted nanorods was deposited by directing silver vapor obliquely towards a plane substrate. The reflection and transmission coefficients of the thin film were measured at three wavelengths in the visible regime for normal-illumination conditions, using ellipsometry and walk-off interferometry. The thin film was found to display a negative real refractive index. Since vapor deposition is a well-established industrial technique to deposit thin films, this finding is promising for large-scale production of negatively refracting metamaterials.

  20. Deposition and Characterization Of Nanocrystalline Silver Thin Films By Using SILAR Method

    Science.gov (United States)

    Rohom, A. B.; Sartale, S. D.

    2011-07-01

    Nanocrystalline silver thin films were deposited on glass substrate by using Successive Ionic Layer Adsorption and Reduction (SILAR) method. Silver nitrate and hydrazine hydrate (HyH) were used as precursors. The deposited silver thin films were characterized by using X-ray diffraction (XRD), UV-visible-NIR absorption spectroscopy and scanning electron microscopy (SEM) techniques. Effect of concentration of HyH on properties of SILAR grown silver thin films has been extensively studied.

  1. Fabrication of solid-state thin-film batteries using LiMnPO{sub 4} thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, Daichi [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Kuwata, Naoaki, E-mail: kuwata@tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Matsuda, Yasutaka; Kawamura, Junichi [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Kang, Feiyu [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2015-03-31

    Solid-state thin-film batteries using LiMnPO{sub 4} thin films as positive electrodes were fabricated and the electrochemical properties were characterized. The LiMnPO{sub 4} thin films were deposited on Pt coated glass substrates by pulsed laser deposition. In-plane X-ray diffraction revealed that the LiMnPO{sub 4} thin films were well crystallized and may have a texture with a (020) orientation. The deposition conditions were optimized; the substrate temperature was 600 °C and the argon pressure was 100 Pa. The electrochemical measurements indicate that the LiMnPO{sub 4} films show charge and discharge peaks at 4.3 V and 4.1 V, respectively. The electrical conductivity of the LiMnPO{sub 4} film was measured by impedance spectroscopy to be 2 × 10{sup −11} S cm{sup −1} at room temperature. The solid-state thin-film batteries that show excellent cycle stability were fabricated using the LiMnPO{sub 4} thin film. Moreover, the chemical diffusion of the LiMnPO{sub 4} thin film was studied by cyclic voltammetry. The chemical diffusion coefficient of the LiMnPO{sub 4} thin film is estimated to be 3.0 × 10{sup −17} cm{sup 2} s{sup −1}, which is approximately four orders magnitude smaller than the LiFePO{sub 4} thin films, and the capacity of the thin-film battery was gradually increased for 500 cycles. - Highlights: • Olivine-type LiMnPO{sub 4} thin-films were fabricated by pulsed laser deposition. • The electrochemical properties were characterized by using solid-state thin-film batteries. • Chemical diffusion coefficient of LiMnPO{sub 4} thin film was estimated by cyclic voltammetry. • Thin-film batteries, Li/Li{sub 3}PO{sub 4}/LiMnPO{sub 4}, show excellent cycle stability up to 500 cycles.

  2. Harmonic generation in ZnO nanocrystalline laser deposited thin films

    Science.gov (United States)

    Narayanan, V.; Thareja, R. K.

    2006-04-01

    ZnO plasma produced by third harmonic 355 nm of Nd:YAG laser at various ambient pressures of oxygen was used for depositing quality nanocrystalline ZnO thin films. Time and space resolved optical emission spectroscopy is used to correlate the plasma properties with that of deposited thin films. The deposited films showed particle size of 8 and 84 nm at ambient oxygen pressure of 100 and 900 mTorr, respectively. Third harmonic generation observed in ZnO thin films deposited under 100 mTorr of ambient oxygen is reported.

  3. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  4. Reaction network analysis for thin film deposition processes

    Science.gov (United States)

    Ramakrishnasubramanian, Krishnaprasath

    Understanding the growth of thin films produced by Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) has been one of the most important challenge for surface chemists over the last two to three decades. There has been a lack of complete understanding of the surface chemistry behind these systems due to the dearth of experimental reaction kinetics data available. The data that do exist are generally derived through quantum computations. Thus, it becomes ever so important to develop a deposition model which not only predicts the bulk film chemistry but also explains its self-limiting nature and growth surface stability without the use of reaction rate data. The reaction network analysis tools developed in this thesis are based on a reaction factorization approach that aims to decouple the reaction rates by accounting for the chemical species surface balance dynamic equations. This process eliminates the redundant dynamic modes and identifies conserved modes as reaction invariants. The analysis of these invariants is carried out using a Species-Reaction (S-R) graph approach which also serves to simplify the representation of the complex reaction network. The S-R graph is self explanatory and consistent for all systems. The invariants can be easily extracted from the S-R graph by following a set of straightforward rules and this is demonstrated for the CVD of gallium nitride and the ALD of gallium arsenide. We propose that understanding invariants through these S-R graphs not only provides us with the physical significance of conserved modes but also give us a better insight into the deposition mechanism.

  5. Oxygen in sputter-deposited ZnTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Merita, S.; Kraemer, T.; Polity, A.; Meyer, B.K. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany); Mogwitz, B.; Franz, B. [Physikalisch-Chemisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 58, 35392 Giessen (Germany)

    2006-03-15

    Bandgap-bowing has been observed in many of the zinc-group-VI compounds, when the anion is substituted with an isovalent element. Recently new results on the ZnO{sub 1-x}S{sub x} and ZnO{sub 1-x}Se{sub x} system have been presented, but so far only one report on ZnO{sub 1-x}Te{sub x} is known. We examine the possibility of substituting tellurium by oxygen in sputter-deposited polycrystalline ZnTe thin-films and the effects on bandgap energy and crystal structure. A first approximation of the bowing curve with a lower limit of the bowing parameter of 2.7 eV is performed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Properties of pulsed laser deposited NiO/MWCNT thin films

    CSIR Research Space (South Africa)

    Yalisi, B

    2011-05-01

    Full Text Available Pulsed laser deposition (PLD) is a thin-film deposition technique, which uses short and intensive laser pulses to evaporate target material. The technique has been used in this work to produce selective solar absorber (SSA) thin film composites...

  7. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)

    2007-07-15

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.

  8. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  9. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  10. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    OpenAIRE

    Lorusso, Antonella; Gontad, F.; Broitman, Esteban; Chiadroni, E.; Perrone, Walter

    2015-01-01

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher ...

  11. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  12. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition

    OpenAIRE

    Ponja, S. D.; Sehmi, S. K.; Allan, E.; MacRobert, A. J.; Parkin, I. P.; Carmalt, C. J.

    2015-01-01

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activit...

  13. Synthesis and Microstructural Characterization of SnO2:F Thin Films Deposited by AACVD

    OpenAIRE

    Chavarría-Castillo,Karen Alejandra; Amézaga-Madrid,Patricia; Esquivel-Pereyra,Oswaldo; Antúnez-Flores, Wilber; Pizá Ruiz, Pedro; Miki-Yoshida,Mario

    2016-01-01

    In this work, we report the synthesis and microstructural characterization of Tin oxide thin films doped with fluorine for applications such as transparent conductive oxides. Tin oxide doped with fluorine thin films were deposited by aerosol assisted chemical vapor deposition technique onto a borosilicate glass substrate, using a precursor solution of stannic chloride in ethanol and ammonium fluoride as the dopant. Deposition temperature was varied between 623-773 K. Also, other deposition pa...

  14. Aspects of thin film deposition on granulates by physical vapor deposition

    Science.gov (United States)

    Eder, Andreas; Schmid, Gerwin H. S.; Mahr, Harald; Eisenmenger-Sittner, Christoph

    2016-11-01

    Thin film and coating technology has entered fields which may show significant deviations from classical coating applications where films are deposited on plane, sometimes large substrates. Often surfaces of small and irregularly shaped bodies have to be improved in respect to electrical, thermal or mechanical properties. Film deposition and characterization on such small substrates is not a trivial task. This specially holds for methods based on Physical Vapor Deposition (PVD) processes such as sputter deposition and its ion- and plasma assisted varieties. Due to their line of sight nature a key issue for homogenous films is efficient intermixing. If this problem is mastered, another task is the prediction and determination of the film thickness on single particles as well as on large scale ensembles thereof. In this work a mechanism capable of uniformly coating up to 1000 cm3 of granulate with particle sizes ranging from approx. 10 μm to 150 μm by magnetron sputtering is thoroughly described. A method for predicting the average film thickness on the particles is presented and tested for several differently shaped objects like microspheres, irregular grains of sinter powder or micro diamonds. For assessing the film thickness on single particles as well as on particle ensembles several complementary methods based on optics, X-ray analysis and gravimetry are employed. Their respective merits and limitations are discussed. Finally an outlook on adapting the described technology for surface modification by plasma based reactive and non-reactive processes is given.

  15. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  16. Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results

    Science.gov (United States)

    McNally, J. J.; Al-Jumaily, G. A.; Wilson, S. R.; McNeil, J. R.

    1985-11-01

    We have examined the properties of dielectric (Ti02, Si02, -Al203, Ta205 and Hf02) films deposited using ion-assisted deposition (IAD). The films were characterized using an angularly resolved scatterometer, spectrophotometer and Raman spectroscopy. A reduction in optical scatter, especially that due to low spatial frequencies, is observed for films deposited with simultaneous ion bombardment. Higher values of refractive index are obtained for films deposited using IAD. Raman spectra indicate a crystalline phase change in TiO2 films is induced by bombardment of samples with 02 ions during deposition. Other experimental data and the effects of the induced phase transition on the optical properties of TiO2 will be discussed.

  17. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  18. Development of vapor deposited thin films for bio-microsystems

    Science.gov (United States)

    Popat, Ketul Chandrakant

    Increasing demands for more biocompatible and sophisticated bio-microsystems in recent years has led to the development of a new technology called BioMEMS (biological micro-electro-mechanical systems). The foundation of this technology is the same as that of the traditional field of IC (integrated circuits), but an emphasis on developing new diagnostic and therapeutic modalities. Micro- and nano-fabrication techniques are currently being used to develop implants that can record, sense, stimulate and deliver to biological systems. Micromachined substrates can provide unique advantages over traditional implantable devices in terms of their ability to control surface micro-architecture, topography and feature size in micron and nano sizes. However, as BioMEMS technology is rapidly being developed, the practical use of these bio-microsystems is limited due to the inability to effectively interface with the biological system in non-immunogenic and stable manner. This is one of the most important considerations, and hence it is useful to focus on the fundamental scientific issues relating to material science, surface chemistry and immunology of silicon based bio-microsystems. This results in development of biomolecular interfaces that are compatible with both microfabrication processing and biological systems. The overall thrust of this research is to develop, characterize and integrate vapor deposited thin films with bio-microsystems in a manner that it is both reproducible and fully integrated with existing technologies. The main strategy is to use silane coatings precursor coatings on which poly (ethylene glycol) (PEG) will be coated in vapor phase. Silane has been coated user vapor phase, but its chemical and biological characterization and stability of the films under physiological conditions has not been investigated for biological applications. PEG has been coated in solution phase on silicon surface. However, it has not been coated under vapor phase. Here we are

  19. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  20. Pulsed laser deposition of permanent magnetic Nd2Fe14B thin films

    NARCIS (Netherlands)

    Geurtsen, A.J.M.; Kools, J.C.S.; Wit, L.; Lodder, J.C.

    1996-01-01

    Pulsed Laser Deposition (PLD) is applied to deposit thin (thickness typically 100 nm) films of Nd2Fe14B. It is shown that films can be grown which have the desired composition and phase. Nd2Fe14B grows with the c-axis along the film normal on 110 Al2O3 single crystal substrates covered with a Ta lay

  1. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...

  2. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  3. Macroparticles Reduction Using Filter Free Cathodic Vacuum Arc Deposition Method in ZnO Thin Films.

    Science.gov (United States)

    Yuvakkumar, R; Peranantham, P; Nathanael, A Joseph; Nataraj, D; Mangalaraj, D; Hong, Sun Ig

    2015-03-01

    We report a new method to reduce macroparticles in ZnO thin films using filter free cathodic vacuum arc deposition without using any cooling arrangements operated at low arc current. The detailed mechanism has been proposed to reduce macroparticles during thin film deposition. The successful reduction of macroparticles was confirmed employing FESEM-EDX studies. FESEM images of ZnO thin films deposited with cathode spot to substrate distance from 10 to 20 cm revealed that the population of the macroparticles were reduced with the increase of cathode spot to substrate distances at low arc current. The prepared ZnO films were characterised and showed good structural and optical properties.

  4. Study of indium tin oxide thin films deposited on acrylics substrates by Ion beam assisted deposition technique

    OpenAIRE

    Meng Lijian; Liang Erjun; Gao Jinsong; Teixeira, Vasco M. P.; Santos, M. P. dos

    2009-01-01

    Indium tin oxide (ITO) thin films have been deposited onto acrylics (PMMA) substrates by ion beam assisted deposition technique at different oxygen flows. The structural, optical and electrical properties of the deposited films have been characterized by X-ray diffraction, transmittance, FTIR, ellipometry and Hall effect measurements. The optical constants of the deposited films have been calculated by fitting the ellipsometric spectra. The effects of the oxygen flow on the properties of the ...

  5. Vapor deposition of polystyrene thin films by intense laser vibrational excitation

    DEFF Research Database (Denmark)

    Bubb, D.M.; Papantonakis, M.R.; Horwitz, J.S.

    2002-01-01

    Polystyrene films were deposited using resonant infrared pulsed laser depositions (RIR-PLD). Thin films were grown on Si(1 1 1) wafers and NaCl substrates and analyzed by Fourier transform infrared spectroscopy (FTIR) and gel permeation chromatography (GPC). The depositions were carried out...

  6. Pulsed laser deposition of carbon nanotube and polystyrene-carbon nanotube composite thin films

    Science.gov (United States)

    Stramel, A. A.; Gupta, M. C.; Lee, H. R.; Yu, J.; Edwards, W. C.

    2010-12-01

    In this work, we report on the fabrication of carbon nanotube thin films via pulsed laser deposition using a pulsed, diode pumped, Tm:Ho:LuLF laser with 2 μm wavelength. The thin films were deposited on silicon substrates using pure carbon nanotube targets and polystyrene-carbon nanotube composite targets. Raman spectra, scanning electron micrographs, and transmission electron micrographs show that carbon nanotubes are present in the deposited thin films, and that the pulsed laser deposition process causes minimal degradation to the quality of the nanotubes when using pure carbon nanotube targets.

  7. Chemical Bath Deposition of Nickel Sulphide (Ni4S3 Thin Films

    Directory of Open Access Journals (Sweden)

    Darren TEO

    2010-12-01

    Full Text Available Thin films of nickel sulphide were deposited from aqueous baths on indium tin oxide glass substrate. The chemical bath contained nickel sulphate, sodium thiosulfate and triethanolamine solutions. The aim of the present study was to analyze the different experimental conditions to prepare Ni4S3 thin films using chemical bath deposition technique. The structural, morphological and optical properties of nickel sulphide thin films were obtained by X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer will be presented. The properties of the films varied with the variation in the deposition parameters. The films deposited at longer deposition time using lower concentration in more acidic medium showed improved crystallinity, good uniformity and better adhesion to the substrate. Films showed band gap of 0.35 eV and exhibited p-type semiconductor behaviour.

  8. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  9. Thin-film preparation by back-surface irradiation pulsed laser deposition using metal powder targets

    Science.gov (United States)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Yamauchi, Makiko; Suda, Yoshiaki

    2017-01-01

    Several kinds of functional thin films were deposited using a new thin-film preparation method named the back-surface irradiation pulsed laser deposition (BIPLD) method. In this BIPLD method, powder targets were used as the film source placed on a transparent target holder, and then a visible-wavelength pulsed laser was irradiated from the holder side to the substrate. Using this new method, titanium oxide and boron nitride thin films were deposited on the silicon substrate. Surface scanning electron microscopy (SEM) images suggest that all of the thin films were deposited on the substrate with some large droplets irrespective of the kind of target used. The deposition rate of the films prepared by using this method was calculated from film thickness and deposition time to be much lower than that of the films prepared by conventional PLD. X-ray diffraction (XRD) measurement results suggest that rutile and anatase TiO2 crystal peaks were formed for the films prepared using the TiO2 rutile powder target. Crystal peaks of hexagonal boron nitride were observed for the films prepared using the boron nitride powder target. The crystallinity of the prepared films was changed by annealing after deposition.

  10. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  11. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  12. Poly-para-xylylene thin films: A study of the deposition chemistry, kinetics, film properties, and film stability

    Science.gov (United States)

    Fortin, Jeffrey Bernard

    Poly-para-xylylene, or parylene, thin films are chemically vapor deposited (CVD), conformal, pin-hole free polymeric thin films. They have found many industrial uses since there invention in 1947 and continue to find new applications in micro-electronics, biotechnology, and micro-electro-mechanical systems. In this study the deposition chemistry, deposition kinetics, film properties, and film stability were investigated. A differentially pumped quadrupole mass spectrometer was used to analyze the vapor species present during the CVD process. The identity of dimer contamination and its impact on the CVD process and film properties was studied. The quantitative conversion of dimer to monomer was investigated and it was found that conversion begins at around 385°C and by 565°C 100% conversion is obtained. The kinetics of the CVD process was analyzed for a range of substrate temperatures and chamber pressures. A new kinetic model based on a two-step adsorption was developed and fit the kinetic data well. This model should be appropriate for use with all parylene family polymers. Many of the properties of the films deposited in this study were analyzed. This includes a detailed study of surface morphology using atomic force microscopy which shows the interface width increases as a power law of film thickness. Other properties analyzed were the thermal stability, electrical properties, index of refraction, birefringence, hardness, and elastic modulus. The effect of ultraviolet (UV) radiation of lambda ≥ 250 nm on the thermal stability, electrical, and optical properties of thin parylene films was studied. The thermal stability and electrical properties of UV treated films were seen to deteriorate as the radiation dose increased. The stability of parylene thin films receiving plasma etching was analyzed. The dielectric constant, dissipation factor, and leakage current of plasma etched thin parylene films were investigated and found to be stable for the range of

  13. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A., E-mail: antonella.lorusso@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Gontad, F. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, Frascati 00044 (Italy); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy)

    2015-03-31

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher temperatures has been observed. X-ray diffraction measurements showed that a preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C while the Pb (200) plane became strongly pronounced with the increase in the substrate temperature. Finally, a Pb thin film deposited on Nb substrate at 30 °C and tested as the photocathode showed interesting results for the application of such a device in superconducting radio frequency guns. - Highlights: • Pb thin films obtained by the nanosecond pulsed laser deposition technique at different substrate temperature. • The substrate temperature modifies the morphology and structure of Pb films. • Pb thin film was deposited at room temperature for photocathode application. • The Pb thin film photocathode was tested and the quantum efficiency of the device improved after laser cleaning treatment of the film surface.

  14. Deposition Methods and Properties of Polycrystalline CdS Thin Films

    Institute of Scientific and Technical Information of China (English)

    LIANG Qian; ZENG Guanggen; LI Bing; WANG Wenwu; JIANG Haibo; ZHANG Jingquan; LI Wei; WU Lili; FENG Lianghuan

    2015-01-01

    CdS thin film was used as a suitable window layer for CdS/CdTe solar cell, and the properties of CdS thin films deposited by pulsed laser deposition (PLD), chemical bath deposition (CBD) and magnetron sputtering (MS) were reported. The experimental results show that the transmittances of PLD-CdS thin films are about 85%and the band gaps are about 2.38-2.42eV. SEM results show that the surface of PLD-CdS thin film is much more compact and uniform. PLD is more suitable to prepare the CdS thin films than CBD and MS. Based on the thorough study, by using totally PLD technique, the FTO/PLD-CdS(150 nm)/CSS-CdTe solar cell (0.0707 cm2) can be prepared with an efficiency of 10.475%.

  15. Structural and optical properties of tellurite thin film glasses deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Munoz-Martin, D.; Fernandez-Navarro, J.M. [Laser Processing Group, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Gonzalo, J., E-mail: j.gonzalo@io.cfmac.csic.es [Laser Processing Group, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Jose, G.; Jha, A. [Institute for Materials Research, University of Leeds, Clarendon Road, Leeds LS2 9JT (United Kingdom); Fierro, J.L.G. [Instituto de Catalisis y Petroleoquimica (CSIC), Marie Curie s/n, 28049 Cantoblanco (Spain); Domingo, C. [Instituto de Estructura de la Materia (CSIC), Serrano 121, 28006 Madrid (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores, P. Tecnologico ' Cartuja 93' , 41092 Sevilla (Spain)

    2011-10-31

    Tellurite (TeO{sub 2}-TiO{sub 2}-Nb{sub 2}O{sub 5}) thin film glasses have been produced by pulsed laser deposition at room temperature at laser energy densities in the range of 0.8-1.5 J/cm{sup 2} and oxygen pressures in the range of 3-11 Pa. The oxygen concentration in the films increases with laser energy density to reach values very close to that of the bulk glass at 1.5 J/cm{sup 2}, while films prepared at 1.5 J/cm{sup 2} and pressures above 5 Pa show oxygen concentration in excess of 10% comparing to the glass. X-ray photoelectron spectroscopy shows the presence of elementary Te in films deposited at O{sub 2} pressures {<=} 5 Pa that is not detected at higher pressures, while analysis of Raman spectra of the samples suggests a progressive substitution of TeO{sub 3} trigonal pyramids by TeO{sub 4} trigonal bipyramids in the films when increasing their oxygen content. Spectroscopic ellipsometry analysis combined with Cauchy and effective medium modeling demonstrates the influence of these compositional and structural modifications on the optical response of the films. Since the oxygen content determines their optical response through the structural modifications induced in the films, those can be effectively controlled by tuning the deposition conditions, and films having large n (2.08) and reduced k (< 10{sup -4}) at 1.5 {mu}m have been produced using the optimum deposition conditions.

  16. Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

    Institute of Scientific and Technical Information of China (English)

    Y.; C.; SOO; H.; KANDEL; M.; A.; THOMAS; C.; P.; DAGHLIAN

    2009-01-01

    Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.

  17. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  18. PbTe thin films grown by femtosecond pulsed laser deposition

    Science.gov (United States)

    Rodriguez, E.; Silva, D.; Moya, L.; Cesar, C. L.; Barbosa, L. C.; Schrank, A.; Souza Filho, C. R.; de Oliveira, E. P.

    2007-09-01

    PbTe thin films were grown on BK7 glass and Si(100) substrates using femtosecond pulsed laser deposition at room temperature. The influence of the background pressure and the laser fluence on the structural and optical characteristics of the PbTe films was studied. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to characterize the surface and structural properties of the deposited PbTe thin films, respectively. Transmission spectroscopy measurements in the visible and infrared region (VIS-IR) were used to investigate the optical properties of the PbTe thin films.

  19. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    Science.gov (United States)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Mayo, B.; Levi, D. H.; Kazmerski, L. L.

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 °C and completely recrystallized after the same treatment at 400 °C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  20. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, Baton Rouge, LA)

    1998-10-26

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  1. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, LA)

    1998-10-29

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  2. Optical properties of PMN-PT thin films prepared using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tong, X.L., E-mail: tongxinglin@yahoo.com.cn [Key Laboratory of Fiber Optic Sensing Technology and Information Processing, Wuhan University of Technology, Ministry of Education, 122 Luoshi Road, Wuhan 430070 (China); Lin, K.; Lv, D.J.; Yang, M.H.; Liu, Z.X.; Zhang, D.S. [Key Laboratory of Fiber Optic Sensing Technology and Information Processing, Wuhan University of Technology, Ministry of Education, 122 Luoshi Road, Wuhan 430070 (China)

    2009-06-30

    (1 - x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-xPbTiO{sub 3} (PMN-PT) thin films have been deposited on quartz substrates using pulsed laser deposition (PLD). Crystalline microstructure of the deposited PMN-PT thin films has been investigated with X-ray diffraction (XRD). Optical transmission spectroscopy and Raman spectroscopy are used to characterize optical properties of the deposited PMN-PT thin films. The results show that the PMN-PT thin films of perovskite structure have been formed, and the crystalline and optical properties of the PMN-PT thin films can be improved as increasing the annealing temperature to 750 deg. C, but further increasing the annealing temperature to 950 deg. C may lead to a degradation of the crystallinity and the optical properties of the PMN-PT thin films. In addition, a weak second harmonic intensity (SHG) has been observed for the PMN-PT thin film formed at the optimum annealing temperature of 750 deg. C according to Maker fringe method. All these suggest that the annealing temperature has significant effect on the structural and optical properties of the PMN-PT thin films.

  3. A direct solution deposition approach to CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Miskin, Caleb K.; Dubois-Camacho, Angela; Reese, Matthew O.; Agrawal, Rakesh

    2016-01-01

    A direct solution deposition approach to CdTe thin films is presented. The difficulty of co-dissolving Te and desirable Cd salts is overcome through a diamine-thiol solvent mixture. Thin films of densely-packed, micron-sized grains are achieved after annealing without the need for chalcogen or CdCl2 vapor treatments.

  4. Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

    Science.gov (United States)

    2003-04-03

    Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition DISTRIBUTION: Approved for public...Society H2.4 Microstructural and Electrical Characterization of Barium Strontium Titanate- based Solid Solution Thin Films Deposited on Ceramic...investigated and report the microstructural and electrical characterization of selected barium strontium titanate-based solid solution thin films

  5. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  6. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. [Argonne National Lab., IL (United States); Lin, Y.P. [Argonne National Lab., IL (United States)]|[Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science; Schultz, J.A. [Ionwerks, Inc., Houston, TX (United States); Schmidt, H. [Schmidt Instruments, Inc., Houston, TX (United States); Liu, Y.L. [Argonne National Lab., IL (United States)]|[Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Auciello, O. [Microelectronics Center of North Carolina, Research Triangle Park, NC (United States); Barr, T. [Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Chang, R.P.H. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  7. XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

    Science.gov (United States)

    Dolo, J. J.; Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Dejene, B. F.

    2010-04-01

    This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd2O2S:Tb3 + thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900°C was found to be the best in terms of the PL intensity of the Gd2O2S:Tb3 + emission. The main emission peak due to the 5D4-7F5 transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd2O3 layer, with small amounts of Gd2S3, on the surface.

  8. Pulsed laser deposition of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ufuktepe, Yüksel, E-mail: ufuk@cu.edu.tr [Department of Physics, University of Cukurova, 01330 Adana (Turkey); Myneni, Ganapati, E-mail: rao@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  9. Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

    Science.gov (United States)

    Andrade, E.; García, V. M.; Nair, P. K.; Nair, M. T. S.; Zavala, E. P.; Huerta, L.; Rocha, M. F.

    2000-03-01

    Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu xSe thin film to Cu 2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

  10. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  11. Titanium dioxide thin film deposited on flexible substrate by multi-jet electrospraying

    Science.gov (United States)

    Ni, Daihong; Yi, Wuming; Cao, Zhoubin; Gu, Wenhua

    2015-10-01

    Titanium dioxide thin film plays an important role in thin film solar cells, and has promising future in everyday applications including air cleaning and self-cleaning glass. With the concepts of flexible solar cells and wearable devices being more and more popular, there is increasing interest to coat titanium dioxide thin films on flexible substrates, such as aluminum foils. Many methods have been used to fabricate titanium dioxide thin films, such as dip-coating, spin coating, aerosol spray, plasma-assisted coating, electrospraying, and so on. Among them, electrospraying is especially suitable for thin film deposition on flexible substrates. This work reports fabrication of dense and uniform titanium dioxide thin films on glass as well as flexible aluminum foil using multi-jet electrospraying technique.

  12. Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition

    Science.gov (United States)

    Song, Sannian; Shen, Lanlan; Song, Zhitang; Yao, Dongning; Guo, Tianqi; Li, Le; Liu, Bo; Wu, Liangcai; Cheng, Yan; Ding, Yuqiang; Feng, Songlin

    2016-10-01

    Phase change random access memory (PCM) appears to be the strongest candidate for next-generation high density nonvolatile memory. The fabrication of ultrahigh density PCM depends heavily on the thin film growth technique for the phase changing chalcogenide material. In this study, TiSb2Te4 (TST) thin films were deposited by thermal atomic layer deposition (ALD) method using TiCl4, SbCl3, (Et3Si)2Te as precursors. The threshold voltage for the cell based on thermal ALD-deposited TST is about 2.0 V, which is much lower than that (3.5 V) of the device based on PVD-deposited Ge2Sb2Te5 (GST) with the identical cell architecture. Tests of TST-based PCM cells have demonstrated a fast switching rate of 100 ns. Furthermore, because of the lower melting point and thermal conductivities of TST materials, TST-based PCM cells exhibit 19% reduction of pulse voltages for Reset operation compared with GST-based PCM cells. These results show that thermal ALD is an attractive method for the preparation of phase change materials.

  13. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  14. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    bound carbon molecule with a well-defined mass (M = 720 amu) and therefore a good, organic test molecule. C60 fullerene thin films of average thickness of more than 100 nm was produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target...

  15. Low Temperature Coating of Anatase Thin Films on Silica Glass Fibers by Liquid Phase Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Shun; LIU Jiachen; FENG Tiecheng

    2007-01-01

    Uniform crystalline TiO2 thin films were coated on silica glass fibers by liquid phase deposition from aqueous solution of ammonium hexafluorotitanate at low temperature. TiO2 thin films and nanopowders were prepared by adding H3BO3 into (NH4)2TiF6 solution supersaturated with anatase nano-crystalline TiO2 at 40 ℃. The effects of the deposition conditions on the surface morphology, section morphology, thickness of the deposited TiO2 thin films were investigated. The results indicate that the growth rate and particle size of the thin films were controlled by both the deposition conditions and the amount of anatase nano-crystalline TiO2.

  16. ZnO Thin Films Deposited on Textile Material Substrates for Biomedical Applications

    Science.gov (United States)

    Duta, L.; Popescu, A. C.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Zgura, I.; Enculescu, I.; Dumitrescu, I.

    We report on the coating with ZnO adherent thin films of cotton woven fabrics by Pulsed laser deposition technique in order to obtain innovative textile materials, presenting protective effects against UV radiations and antifungal action.

  17. Glancing angle deposition of thin films engineering the nanoscale

    CERN Document Server

    Hawkeye, Matthew M; Brett, Michael J

    2014-01-01

    This book provides a highly practical treatment of GLAD technology, gathering existing procedures, methodologies, and experimental designs into a single, cohesive volume which will be useful both as a ready reference for those in the field and as a definitive guide for those entering it. It covers: History and development of GLAD techniquesProperties and Characterization of GLAD fabricated filmsDesign and engineering of optical GLAD films including fabrication and testingPost-deposition processing and integrationDeposition systems for GLAD fabrication Also includes a patent survey of relevant literature and a survey of GLAD's wide range of material properties and diverse applications.

  18. Structural and Optical Study of Chemical Bath Deposited Nano-Structured CdS Thin Films

    Science.gov (United States)

    Kumar, Suresh; Sharma, Dheeraj; Sharma, Pankaj; Sharma, Vineet; Barman, P. B.; Katyal, S. C.

    2011-12-01

    CdS is commonly used as window layer in polycrystalline solar cells. The paper presents a structural and optical study of CdS nano-structured thin films. High quality CdS thin films are grown on commercial glass by means of chemical bath deposition. It involves an alkaline solution of cadmium salt, a complexant, a chalcogen source and a non-ionic surfactant. The films have been prepared under various process parameters. The chemically deposited films are annealed to estimate its effect on the structural and optical properties of films. These films (as -deposited and annealed) have been characterized by means of XRD, SEM and UV-Visible spectrophotometer. XRD of films show the nano-crystalline nature. The energy gap of films is found to be of direct in nature.

  19. An Investigation of the Relationship between Resistance and Thickness of Deposited Nickel Thin Film Resistors

    Directory of Open Access Journals (Sweden)

    Ericam R.R. Mucunguzi-Rugwebe

    2013-09-01

    Full Text Available The main purpose of this study is finding the relationship between resistance and thickness of deposited Nickel Thin Film Resistors. It was found that the Sheet Resistance, Rs, is inversely proportional to the thickness of the film on the substrate. It was also observed that when the film thickness is greater than 50 nm, films behave like ordinary resistors. In other words in bulk, films obey Ohm’s law if other physical quantities remain constant.

  20. The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

    OpenAIRE

    2014-01-01

    Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2 are ab...

  1. Magnetic and optical properties of the nickel thin film deposited by GLAD technique

    Directory of Open Access Journals (Sweden)

    Potočnik Jelena M.

    2014-01-01

    Full Text Available In this work, nickel thin film was deposited on glass sample using Glancing Angle Deposition (GLAD technique, to a thickness of 1 μm. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The nickel thin film was characterized by Atomic Force Microscopy (AFM, Magneto- Optical Kerr effect Microscopy and Spectroscopic Ellipsometry. According to an AFM cross-section imaging, it was found that the nickel thin film has a columnar structure. The values of the coercively, obtained from the magnetic hysteresis loops, were analyzed as a function of the sample rotation in the magnetic field. It was found that the direction of magnetization easy axis lies toward the structure growth. Optical properties of the nickel thin film were studied at the wavelength of 455 nm. From the shape of the refractive index and the extinction coefficient diagrams could be concluded that the nickel thin film has an optical anisotropy.

  2. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Velusamy, P.; Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Films Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli-620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Films Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur – 603 203, Tamil Nadu (India)

    2016-05-23

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300°C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  3. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    Science.gov (United States)

    Velusamy, P.; Babu, R. Ramesh; Ramamurthi, K.

    2016-05-01

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300˚C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  4. Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition

    Science.gov (United States)

    Kim, Dong Hun; Kim, Tae Cheol; Lee, Seung Han; Jung, Hyun Kyu; Jeong, Jaeeun; Han, Seung Ho

    2017-02-01

    The crystal structure and magnetic properties of epitaxial ZnO thin films doped with 5 at% Cu on SrTiO3 (001) and (111) substrates were investigated. In the case of films deposited in oxygen, unique crystallographic growth directions on different substrates were observed, while a metallic phase was detected in films grown under vacuum. The Cu-doped ZnO thin films deposited on the SrTiO3 (111) substrates, with hexagonal structures, showed a single epitaxial relationship with the substrates, whereas those deposited on the SrTiO3 (001) substrates showed a double epitaxial growth mode. The epitaxial ZnCuO thin films deposited on the SrTiO3 (111) substrates under high vacuum exhibited a ferromagnetic signal at room temperature.

  5. Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Anni, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Caricato, A.P. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Perulli, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Taurino, A. [National Research Council, Institute for Microelectronics & Microsystems, 73100 Lecce (Italy); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

    2016-03-31

    In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

  6. Sputter deposition of ZnO thin films at high substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kronenberger, Achim; Eisermann, Sebastian; Laufer, Andreas; Graubner, Swen; Polity, Angelika; Meyer, Bruno K. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen (Germany)

    2008-07-01

    For the use of sputter deposited ZnO thin films in semiconductor devices, not only the electrical behaviour but also to maintain high crystal quality of the deposited films is important. Pure ZnO thin films have been prepared on quartz glass and sapphire substrates by radio-frequency (RF) sputtering using a ceramic ZnO target. The substrate-temperature during the deposition could be adjusted from RT up to 735 C. Argon was used as sputter-gas and oxygen as reactive-gas to change the stoichiometry of the deposited thin films. The crystallinity of the deposited films has been analysed by XRD measurements. For optical and electrical characterisation optical transmission and Hall-effect measurements have been performed. To investigate impurities the films have been analysed by EDX and SIMS. The focus was set on the electrical and optical properties of the deposited ZnO thin films and their changing behaviour in the cause of the different deposition parameters such as gas pressures, substrate temperature and rf-power. The aim was to gain control over changing the resistivity in a wide range, while keeping the films transparent in the visible region of the electromagnetic spectra and simultaneous maintain a high crystal quality.

  7. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  8. Kinetic Monte Carlo simulation of physical vapor deposition of thin Cu film

    Institute of Scientific and Technical Information of China (English)

    WANG Jun; CHEN Chang-qi; ZHU Wu

    2004-01-01

    A two-dimensional Kinetic Monte Carlo method has been developed for simulating the physical vapor deposition of thin Cu films on Cu substrate. An improved embedded atom method was used to calculate the interatomic potential and determine the diffusion barrier energy and residence time. Parameters, including incident angle,deposition rate and substrate temperature, were investigated and discussed in order to find their influences on the thin film morphology.

  9. Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

    2010-02-24

    Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  10. Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

    Science.gov (United States)

    Gowrish Rao, K.; Bangera, Kasturi V.; Shivakumar, G. K.

    2011-11-01

    The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.

  11. Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films

    Science.gov (United States)

    Maheswari, B.; Dhanam, M.

    2013-04-01

    CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.

  12. Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO)transparent thin films deposited by pulsed laser deposition process

    Institute of Scientific and Technical Information of China (English)

    Jin-Hyum SHIN; Dong-Kyun SHIN; Hee-Young LEE; Jai-Yeoul LEE

    2011-01-01

    Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO GZO/AZO thin films linearly decreases with increasing the Al ratio.

  13. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  14. Thin films of SiO2 and hydroxyapatite on titanium deposited by spray pyrolysis.

    Science.gov (United States)

    Jokanovic, V; Jokanovic, B; Izvonar, D; Dacic, B

    2008-05-01

    Wet spray pyrolysis of fine, well-dispersed a SiO2 sol was used for the deposition of thin films of silicon dioxide. The sol was obtained by hydrothermal precipitation of silicon acid from a solution at pH = 10. The morphology, roughness, phase composition, chemical homogeneity and the mechanism of the films were investigated by SEM, EDS and IR spectroscopy. The obtained results show a complete covering of the titanium substrate with SiO2 after 3 h of deposition. It was observed that the film thickness increased from 3 to 19 microm, the roughness of the film decreased from 12 to 3 microm, while the morphology of the deposit changed considerably. A hydroxyapatite film was prepared on the so-obtained SiO2 thin film by spray pyrolysis deposition and its morphology and phase composition were investigated.

  15. Effect of incident deposition angle on optical properties and surface roughness of TiO2 thin films

    Science.gov (United States)

    Pan, Yongqiang; Yang, Chen

    2016-10-01

    Optical properties, surface roughness and packing density of TiO2 thin films are studied by obliquely deposited on K9 glass by electron beam evaporation. The surface roughness of TiO2 thin films with different incident deposition angle is compared. The experimental results show that the transmittance increases and transmittance peak shifts to short wavelength with increasing incident deposition angle, the packing density of TiO2 thin films decrease from 0.80 to 0.34 with incident deposition angle increasing from 0° to 75°. The surface roughness of TiO2 thin films increase with increasing incident deposition angle. The surface roughness of TiO2 thin films is slightly bigger than the surface roughness of K9 substrate when the incident deposition angle is 75°. When the incident deposition angle is constant, TiO2 thin films surface roughness decrease with increase of film thickness.

  16. Theoretical and experimental characterization of TiO{sub 2} thin films deposited at oblique angles

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez, R; Gonzalez-GarcIa, L; Romero-Gomez, P; Rico, V; Cotrino, J; Gonzalez-Elipe, A R; Palmero, A, E-mail: rafael.alvarez@icmse.csic.es [Instituto de Ciencia de Materiales de Sevilla (CSIC-Universidad de Sevilla). Av. Americo Vespucio 49, 41092 Sevilla (Spain)

    2011-09-28

    The microstructural features of amorphous TiO{sub 2} thin films grown by the electron beam physical vapour deposition technique at oblique angles have been experimentally and theoretically studied. The microstructural features of the deposited films were characterized by considering both the column tilt angle and the increase in the column thickness with height. A Monte Carlo model of film growth has been developed that takes into account surface shadowing, short-range interaction between the deposition species and the film surface, as well as the angular broadening of the deposition flux when arriving at the substrate. The good match between simulations and experimental results indicates the importance of these factors in the growth and microstructural development of thin films deposited at oblique angles.

  17. Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

    Science.gov (United States)

    Hines, Jacqueline H. (Inventor)

    2015-01-01

    A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

  18. The influence of deposition temperature on vanadium dioxide thin films microstructure and physical properties

    Directory of Open Access Journals (Sweden)

    Velaphi Msomi

    2010-10-01

    Full Text Available Vanadium dioxide thin films were successfully prepared on soda lime glass substrates using the optimised conditions for r.f-inverted cylindrical magnetron sputtering. The optimised deposition parameters were fixed and then a systematic study of the effect of deposition temperature, ranging from 450 °C to 550 °C, on the microstructure of thermochromic thin films was carried out. The deposited films were found to be well crystallised, showing strong texture corresponding to the (011 plane, indicating the presence of vanadium dioxide.

  19. PZT thin film deposition techniques, properties and its application in ultrasonic MEMS sensors: a review

    Science.gov (United States)

    Shilpa, G. D.; Sreelakshmi, K.; Ananthaprasad, M. G.

    2016-09-01

    This paper describes an overview of the state of art in PbZrxTi1-xO3 (PZT)ferroelectric thin films and its applications in Micro Electro Mechanical Systems (MEMS). First, the deposition techniques and then the important properties of PZT films such as surface morphology polarization and ferroelectric properties are reviewed. Two major deposition techniques such as sol-gel and Magnetron sputtering are given and compared for the film surface morphology and ferroelectric properties. Finally, the application of PZT thin film in MEMS ultrasonic sensors is discussed.

  20. Physical and electrochemical study of platinum thin films deposited by sputtering and electrochemical methods

    Energy Technology Data Exchange (ETDEWEB)

    Quinones, C. [Universidad de Cartagena, Cartagena de Indias (Colombia); Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 No 45-03, Bogota (Colombia); Vallejo, W., E-mail: wavallejol@unal.edu.co [Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 No 45-03, Bogota (Colombia); Mesa, F. [Departamento de Ciencias Basicas, Universidad Libre, Carrera 70 No 53-40, Bogota (Colombia)

    2011-06-15

    In this work platinum thin films deposited by sputtering and electrochemical methods were characterized through physical and electrochemical analysis. The as-grown platinum thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM); scanning electronic microscopy (SEM) and through electrochemical impedance spectroscopy (EIS) measurements. Structural studies indicated that platinum thin films were polycrystalline. Morphological characteristics were significantly affected by the substrate type and synthesis method. Finally the EIS analysis indicated that platinum films were electrochemically stable and present both low resistance of charge transfer and low series resistance; the equivalent circuit of platinum interface has been proposed.

  1. Thin Films with Low Zn Content Prepared by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Caijuan Tian

    2012-01-01

    Full Text Available Chemical bath deposition (CBD was used for the growth of thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while was used to replace CdS as the window layer in CdTe solar cells.

  2. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    Science.gov (United States)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.

  3. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Science.gov (United States)

    Shaji, S.; Garcia, L. V.; Loredo, S. L.; Krishnan, B.; Aguilar Martinez, J. A.; Das Roy, T. K.; Avellaneda, D. A.

    2017-01-01

    Antimony sulfide (Sb2S3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb2S3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb2S3 thin films for optoelectronic applications.

  4. Achieving Thin Films with Micro/Nano-Scale Controllable Morphology by Glancing Angle Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    JIANG Shao-Ji; WANG Chao-Yi; TANG Ji-Jia; HU Lin-Xin

    2008-01-01

    @@ We demonstrate that thin films with micro/nanometre controllable morphology can be fabricated by the glancing angle deposition (GLAD) technique which is a physical vapour deposition technique.In this technique, there are parameters which determine the morphology of the thin films: the incident angle, ratio of the deposition rate with respect to the substrate rotation rate, nature of the material being deposited, etc.We fabricate the morphology of column, pillar, helices, zigzag and study the parameters which determine morphology by given some examples of SEM.

  5. Optimised In2S3 Thin Films Deposited by Spray Pyrolysis

    OpenAIRE

    Hristina Spasevska; Catherine C. Kitts; Cosimo Ancora; Giampiero Ruani

    2012-01-01

    Indium sulphide has been extensively investigated as a component for different kind of photovoltaic devices (organic-inorganic hybrid devices, all inorganic, dye sensitized cells). In this paper, we have optimised the growth conditions of indium sulphide thin films by means of a low cost, versatile deposition technique, like spray pyrolysis. The quality of the deposited films has been characterised by micro-Raman, vis-UV spectroscopy, and atomic force microscopy. Substrate deposition temperat...

  6. Optimised In2S3 Thin Films Deposited by Spray Pyrolysis

    OpenAIRE

    Hristina Spasevska; Kitts, Catherine C.; Cosimo Ancora; Giampiero Ruani

    2012-01-01

    Indium sulphide has been extensively investigated as a component for different kind of photovoltaic devices (organic-inorganic hybrid devices, all inorganic, dye sensitized cells). In this paper, we have optimised the growth conditions of indium sulphide thin films by means of a low cost, versatile deposition technique, like spray pyrolysis. The quality of the deposited films has been characterised by micro-Raman, vis-UV spectroscopy, and atomic force microscopy. Substrate deposition temperat...

  7. Dense zig-zag microstructures in YSZ thin films by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Dieter Stender

    2015-01-01

    Full Text Available The very brittle oxygen ion conductor yttria stabilized zirconia (YSZ is a typical solid electrolyte for miniaturized thin film fuel cells. In order to decrease the fuel cell operating temperature, the thickness of yttria stabilized zirconia thin films is reduced. Often, these thin membranes suffer from mechanical failure and gas permeability. To improve these mechanical issues, a glancing angle deposition approach is used to grow yttria stabilized zirconia thin films with tilted columnar structures. Changes of the material flux direction during the deposition result in a dense, zigzag-like structure with columnar crystallites. This structure reduces the elastic modulus of these membranes as compared to columnar yttria stabilized zirconia thin films as monitored by nano-indentation which makes them more adaptable to applied stress.

  8. A Humidity Sensor Based on Silver Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Process

    Directory of Open Access Journals (Sweden)

    Thutiyaporn Thiwawong

    2013-01-01

    Full Text Available In this work, thin film of silver nanoparticles for humidity sensor application was deposited by electrostatic spray deposition technique. The influence of the deposition times on properties of films was studied. The crystal structures of sample films, their surface morphology, and optical properties have been investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and UV-VIS spectrophotometer, respectively. The crystalline structure of silver nanoparticles thin film was found in the orientation of (100 and (200 planes of cubic structure at diffraction angles 2θ  =  38.2° and 44.3°, respectively. Moreover, the silver nanoparticles thin films humidity sensor was fabricated onto the interdigitated electrodes. The sensor exhibited the humidity adsorption and desorption properties. The sensing mechanisms of the device were also elucidated by complex impedance analysis.

  9. Oxidative chemical vapor deposition of polyaniline thin films.

    Science.gov (United States)

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  10. Incongruent transfer in laser deposition of FeSiGaRu thin films

    Science.gov (United States)

    van de Riet, E.; Kools, J. C. S.; Dieleman, J.

    1993-06-01

    The laser ablation and deposition of FeSiGaRu is studied. The deposited thin films are analyzed with Auger electron spectroscopy and Rutherford backscattering spectrometry. It is found that the gallium and ruthenium content of the thin films is strongly dependent on the laser fluence. At high laser fluences (6 J/cm2) the thin films are depleted of gallium due to preferential sputtering of the gallium atoms from the thin film. Near the threshold fluence (1.9 J/cm2) the films contain an excess of gallium due to preferential evaporation of gallium from the target. The latter conclusions are based on time-of-flight studies of ablated atoms and ions and on measurements of the atoms that are sputtered from the substrate by the incoming flux.

  11. Copper selenide thin films by chemical bath deposition

    Science.gov (United States)

    García, V. M.; Nair, P. K.; Nair, M. T. S.

    1999-05-01

    We report the structural, optical, and electrical properties of thin films (0.05 to 0.25 μm) of copper selenide obtained from chemical baths using sodium selenosulfate or N,N-dimethylselenourea as a source of selenide ions. X-ray diffraction (XRD) studies on the films obtained from baths using sodium selenosulfate suggest a cubic structure as in berzelianite, Cu 2- xSe with x=0.15. Annealing the films at 400°C in nitrogen leads to a partial conversion of the film to Cu 2Se. In the case of films obtained from the baths containing dimethylselenourea, the XRD patterns match that of klockmannite, CuSe. Annealing these films in nitrogen at 400°C results in loss of selenium, and consequently a composition rich in copper, similar to Cu 2- xSe, is reached. Optical absorption in the films result from free carrier absorption in the near infrared region with absorption coefficient of ˜10 5 cm -1. Band-to-band transitions which gives rise to the optical absorption in the visible-ultraviolet region may be interpreted in terms of direct allowed transitions with band gap in the 2.1-2.3 eV range and indirect allowed transitions with band gap 1.2-1.4 eV. All the films, as prepared and annealed, show p-type conductivity, in the range of (1-5)×10 3 Ω -1 cm -1. This results in high near infrared reflectance, of 30-80%.

  12. Atomic Force Microscopy Studies on The Surface Morphologies of Chemical Bath Deposited Cus Thin Films

    Directory of Open Access Journals (Sweden)

    Ho Soonmin

    2016-06-01

    Full Text Available In this work, copper sulphide thin films were deposited onto microscope glass slide by chemical bath deposition technique. The tartaric acid was served as complexing agent to chelate with Cu2+ to obtain complex solution. The influence of pH value on the surface morphologies of the films has been particularly investigated using the atomic force microscopy technique. The atomic force microscopy results indicate that the CuS films deposited at pH 1 were uniform, compact and pinhole free. However, the incomplete surface coverage observed for the films prepared at high pH (pH 2 and 2.5 values.

  13. Rare earth-doped alumina thin films deposited by liquid source CVD processes

    Energy Technology Data Exchange (ETDEWEB)

    Deschanvres, J.L.; Meffre, W.; Joubert, J.C.; Senateur, J.P. [Ecole Nat. Superieure de Phys. de Grenoble, St. Martin d`Heres (France). Lab. des Materiaux et du Genie Phys.; Robaut, F. [Consortium des Moyens Technologiques Communs, Institut National Polytechnique de Grenoble, BP 75, 38402 St Martin d`Heres (France); Broquin, J.E.; Rimet, R. [Laboratoire d`Electromagnetisme, Microondes et Optoelectronique, CNRS-Ecole Nationale Superieure d`Electronique et Radioelectricite de Grenoble, BP 257, 38016 Grenoble, Cedex (France)

    1998-07-24

    Two types of liquid-source CVD processes are proposed for the growth of rare earth-doped alumina thin films suitable as amplifying media for integrated optic applications. Amorphous, transparent, pure and erbium- or neodymium-doped alumina films were deposited between 573 and 833 K by atmospheric pressure aerosol CVD. The rare earth doping concentration increases by decreasing the deposition temperature. The refractive index of the alumina films increases as a function of the deposition temperature from 1.53 at 573 K to 1.61 at 813 K. Neodymium-doped films were also obtained at low pressure by liquid source injection CVD. (orig.) 7 refs.

  14. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A., E-mail: alessio.perrone@unisalento.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); INFN-Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Gontad, F. [INFN-Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Lorusso, A.; Di Giulio, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Ferrario, M. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

    2013-11-21

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ–2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10{sup −5}) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed. -- Highlights: •Comparison of Pb thin films deposited on Nb substrate by thermal evaporation and pulsed laser deposition (PLD). •Photoelectron performances of Pb thin films. •Good quality of adhesion strength of Pb films deposited by PLD.

  15. Optimised In2S3 Thin Films Deposited by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Hristina Spasevska

    2012-01-01

    Full Text Available Indium sulphide has been extensively investigated as a component for different kind of photovoltaic devices (organic-inorganic hybrid devices, all inorganic, dye sensitized cells. In this paper, we have optimised the growth conditions of indium sulphide thin films by means of a low cost, versatile deposition technique, like spray pyrolysis. The quality of the deposited films has been characterised by micro-Raman, vis-UV spectroscopy, and atomic force microscopy. Substrate deposition temperature and different postdeposition annealing conditions have been investigated in order to obtain information about the quality of the obtained compound (which crystalline or amorphous phases are present and the morphology of the deposited films. We have shown that the deposition temperature influences strongly the amount of amorphous phase and the roughness of the indium sulphide films. Optimised postdeposition annealing treatments can strongly improve the final amount of the beta phase almost independently from the percentage of the amorphous phase present in the as deposited films.

  16. Preparation of BiFeO3 thin films by pulsed laser deposition method

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guan-jun; CHENG Jin-rong; CHEN Rui; YU Sheng-wen; MENG Zhong-yan

    2006-01-01

    BiFeO3 (BFO) thin films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by the pulsed-laser deposition (PLD) technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures,achieving 186,171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666,1.333 and 13.332 Pa,respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 μC/cm2 and the coercive field of 176 kV/cm.

  17. Thermoluminescence of thin films deposited by laser ablation; Termoluminiscencia de peliculas delgadas depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R. [Depto. de Fisica, ININ, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    2003-07-01

    Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN{sub x} whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

  18. EPD-deposited ZnO thin films: a review

    Energy Technology Data Exchange (ETDEWEB)

    Verde, M.

    2014-07-01

    ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD) constitutes an economical, eco friendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized. (Author)

  19. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    Science.gov (United States)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  20. Deposition and Characterization of Molybdenum Thin Film Using Direct Current Magnetron and Atomic Force Microscopy

    Directory of Open Access Journals (Sweden)

    Muhtade Mustafa Aqil

    2017-01-01

    Full Text Available In this paper, pure molybdenum (Mo thin film has been deposited on blank Si substrate by DC magnetron sputtering technique. The deposition condition for all samples has not been changed except for the deposition time in order to study the influence of time on the thickness and surface morphology of molybdenum thin film. The surface profiler has been used to measure the surface thickness. Atomic force microscopy technique was employed to investigate the roughness and grain structure of Mo thin film. The thickness and grain of molybdenum thin film layer has been found to increase with respect to time, while the surface roughness decreases. The average roughness, root mean square roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology of Mo thin film. Smooth surface has been observed. From grain analysis, a uniform grain distribution along the surface has been found. The obtained results allowed us to decide the optimal time to deposit molybdenum thin film layer of 20–100 nm thickness and subsequently patterned as electrodes (source/drain in carbon nanotube-channel transistor.

  1. Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

    Science.gov (United States)

    Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

    2014-06-01

    A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

  2. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  3. Ag Nanodots Emitters Embedded in a Nanocrystalline Thin Film Deposited on Crystalline Si Solar Cells.

    Science.gov (United States)

    Park, Seungil; Ryu, Sel Gi; Ji, HyungYong; Kim, Myeong Jun; Peck, Jong Hyeon; Kim, Keunjoo

    2016-06-01

    We fabricated crystalline Si solar cells with the inclusion of various Ag nanodots into the additional emitters of nanocrystallite Si thin films. The fabricated process was carried out on the emitter surface of p-n junction for the textured p-type wafer. The Ag thin films were deposited on emitter surfaces and annealed at various temperatures. The amorphous Si layers were also deposited on the Ag annealed surfaces by hot-wire chemical vapor deposition and then the deposited layers were doped by the second n-type doping process to form an additional emitter. From the characterization, both the Ag nanodots and the deposited amorphous Si thin films strongly reduce photo-reflectances in a spectral region between 200-400 nm. After embedding Ag nanodots in nanocrystallite Si thin films, a conversion efficiency of the sample with added emitter was achieved to 15.1%, which is higher than the 14.1% of the reference sample and the 14.7% of the de-posited sample with a-Si:H thin film after the Ag annealing process. The additional nanocrystallite emitter on crystalline Si with Ag nanodots enhances cell properties.

  4. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    Science.gov (United States)

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-11-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1-xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1-xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1-xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1-xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1-xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C-320 °C) on MgO using PLD. This offers a broad scope of various applications.

  5. Structural and optical properties of manganese oxide thin films deposited by pulsed laser deposition at different substrate temperatures

    Science.gov (United States)

    Jamil, H.; Khaleeq-ur-Rahman, M.; Dildar, I. M.; Shaukat, Saima

    2017-09-01

    We report the use of pulsed laser deposition (PLD) to grow manganese oxide thin films at a fixed low oxygen pressure at different temperatures on silicon (1 0 0) substrates. Structural properties of the thin films were examined using x-ray diffraction and Fourier transform infrared spectroscopy. Surface morphology and topography of the films was determined using atomic force microscopy and optical microscopy, while optical properties of the thin films were studied using spectroscopic ellipsometry. It was found that PLD is a convenient technique to deposit different phases of manganese oxide by tuning the deposition temperature. All measured physical properties such as morphology, topography, crystallite size, and optical band gap were clearly dependent on the substrate temperature chosen.

  6. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-05

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices.

  7. Varying stress of SiOsub>xsub>Csub>ysub> thin films deposited by plasma polymerization.

    Science.gov (United States)

    Liao, Wei-Bo; Chang, Ya-Chen; Jaing, Cheng-Chung; Cheng, Ching-Long; Lee, Cheng-Chung; Wei, Hung-Sen; Kuo, Chien-Cheng

    2017-02-01

    SiOsub>xsub>Csub>ysub> thin films were deposited by plasma polymerization. The stress of the deposited SiOsub>xsub>Csub>ysub> thin films can be modified by adjusting the beam current, the anode voltage, and the flow rate of hexamethyldisiloxane (HMDSO) gas and oxygen. Reducing the beam current or increasing the flow rate of HMDSO gas increased the linear/cage structure ratio and turned the stress of the SiOsub>xsub>Csub>ysub> thin films from compressive to tensile. The linear/cage structure ratio can be adjusted by changing the composite parameter, W[FM]sub>csub>/[FM]sub>msub>, to control the stress of the deposited plasma polymer films. Multilayers of TiOsub>2sub>/SiOsub>2sub>/TiOsub>2sub> were coated on a SiOsub>xsub>Csub>ysub> plasma polymer film herein, reducing their stress by 70% from 0.06 to 0.018 GPa. The refractive index is 1.55, and the absorption coefficient is less than 10-4 at 550 nm of the SiOsub>xsub>Csub>ysub> films. Superior optical performances of SiOsub>xsub>Csub>ysub> thin films make their use in optical thin films.

  8. EFFECT OF RESIDUAL STRESS ON THE MARTENSITIC TRANS- FORMATION OF SPUTTER-DEPOSITED SMA THIN FILMS

    Institute of Scientific and Technical Information of China (English)

    L. Wang; D. Xu; B.C. Cai

    2002-01-01

    TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method.The phenomenon of stress-suppressed martensitic transformation was observed. It isconsidered that the residual stresses in SMA thin films based on circular substratesact as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitictransformation.

  9. Studies on chemical bath deposited zinc sulphide thin films with special optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Ladar, Maria [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); ' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Popovici, Elisabeth-Jeanne [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania)]. E-mail: jennypopovici@yahoo.com; Baldea, Ioan [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); Grecu, Rodica [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Indrea, Emil [National Institute for R and D of Isotopic and Molecular Technology, Donath 71-103, 400293 Cluj-Napoca (Romania)

    2007-05-31

    Adherent and uniform zinc sulphide thin films were deposited on optical glass platelets from chemical bath containing thiourea, zinc acetate, ammonia and sodium citrate. The samples, as they were prepared were investigated by UV-vis absorption/reflection spectroscopy, fluorescence spectroscopy and X-ray diffraction. The effects of growth conditions such as reagent concentration and deposition technique (mono- and multi-layer) on optical and structural properties of the ZnS thin films have been studied. The ability of ZnS films to exhibit luminescent properties has also been investigated.

  10. The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

    Directory of Open Access Journals (Sweden)

    P. S. Raghupathi

    2005-01-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.

  11. Deposition and characterization of La 2Ti 2O 7 thin films via spray pyrolysis process

    Science.gov (United States)

    Todorovsky, D. S.; Todorovska, R. V.; Milanova, M. M.; Kovacheva, D. G.

    2007-03-01

    Thin films of La 2Ti 2O 7 have been deposited on fused silica and Si substrates by a spray pyrolysis method using ethylene glycol solution of La(III)-Ti(IV)-citrate complexes as starting material and O 2 as a carrier gas. The composition, crystal structure and morphology of the films are studied.

  12. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance 75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  13. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  14. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  15. Pulsed laser deposition of AlMgB14 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  16. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  17. Functional porphyrin thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Atomistilor 409, Bucharest-Magurele (Romania); Popescu, C.; Popescu, A.C.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Atomistilor 409, Bucharest-Magurele (Romania); Ciucu, A.A. [Univeristy of Bucharest, Chemistry Department, Bucharest (Romania); Andronie, A.; Iordache, S.; Stamatin, I. [University of Bucharest, 3 Nano-SAE Research Center, P.O. Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, Department of Organic Chemistry, 300223 Timisoara (Romania); Chrisey, D.B. [Rensselaer Polytechnic Institute, School of Engineering, Department of Materials Science and Engineering, Troy 12180-3590, NY (United States)

    2010-05-25

    We report the first successful deposition of functionalized and nanostructured Zn(II)- and Co(II)-metalloporphyrin thin films by matrix assisted pulsed laser evaporation onto silicon wafers, quartz plates and screen-printed electrodes. The deposited nanostructures have been characterized by Raman spectrometry and cyclic voltammetry. The novelty of our contribution consists of the evaluation of the sensitivity of the MAPLE-deposited Zn(II)- and Co(II)-metalloporphyrin thin films on screen-printed carbon nanotube electrodes when challenged with dopamine.

  18. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    Science.gov (United States)

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  19. Cell adhesion property of cathodic arc plasma deposited CrN thin film

    Science.gov (United States)

    Kim, Sun Kyu; Pham, Vuong Hung

    2009-09-01

    The interaction between human osteoblast cells and CrN thin film was studied in vitro. CrN thin films were produced by cathodic arc plasma deposition. The surface was characterized by atomic force microscopy. Cell adhesion on the coatings was assessed by MTT assay and visualization. Cell cytoskeleton organization was studied by analyzing microtubule and actin cytoskeleton organization. Focal contact adhesion was monitored by analyzing vinculin density. The study found that the CrN thin film is a potential candidate as a protective coating on implantable devices that require minimal cellular adhesion.

  20. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  1. Engineering the Crystalline Morphology of Polymer Thin Films via Physical Vapor Deposition

    Science.gov (United States)

    Jeong, Hyuncheol; Arnold, Craig; Priestley, Rodney

    Thin-film growth via physical vapor deposition (PVD) has been successfully exploited for the delicate control of film structure for molecular and atomic systems. The application of such a high-energetic process to polymeric film growth has been challenged by chemical degradation. However, recent development of Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique opened up a way to deposit a variety of macromolecules in a PVD manner. Here, employing MAPLE technique to the growth of semicrystalline polymer thin films, we show the engineering of crystalline film morphology can be achieved via manipulation of substrate temperature. This is accomplished by exploiting temperature effect on crystallization kinetics of polymers. During the slow film growth crystallization can either be permitted or suppressed, and crystal thickness can be tuned via temperature modulation. In addition, we report that the crystallinity of polymer thin films may be significantly altered with deposition temperature in MAPLE processing. We expect that this ability to manipulate crystallization kinetics during polymeric film growth will open the possibility to engineer structure in thin film polymeric-based devices in ways that are difficult by other means.

  2. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  3. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation.

    Science.gov (United States)

    Alvarado, Jose Alberto; Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  4. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  5. Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition

    Institute of Scientific and Technical Information of China (English)

    Jie JIANG; Xue-tao WANG; Li-ping ZHU; Li-qiang ZHANG; Zhi-guo YANG; Zhi-zhen YE

    2011-01-01

    ZnNiO thin films with different contents of Ni (0-10 at.%) were fabricated on quartz and Si (100) substrates bY pulsed laser deposition (PLD).We measured the samples by X-ray diffraction (XRD),field-emission scanning electron microscope (FE-SEM),X-ray photoelectron spectroscopy (XPS),ultraviolet-visible spectrometer (UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.

  6. Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis

    Science.gov (United States)

    Parkhomenko, H. P.; Solovan, M. N.; Mostovoi, A. I.; Orletskii, I. G.; Parfenyuk, O. A.; Maryanchuk, P. D.

    2017-06-01

    Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), and thickness d, are determined. The temperature dependence of the resistance of thin films is found, and the activation energy of films deposited by different methods is determined.

  7. Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.

    Science.gov (United States)

    Rembert, Thomas; Battaglia, Corsin; Anders, André; Javey, Ali

    2015-10-28

    A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.

  8. Deposited metamaterial thin film with negative refractive index and permeability in the visible regime.

    Science.gov (United States)

    Jen, Yi-Jun; Chen, Chih-Hui; Yu, Ching-Wei

    2011-03-15

    Thin films are fabricated from arrays of silver nanorods with thicknesses of 160 nm and 200 nm, to function as a metamaterial. The negative refractive index and negative permeability are retrieved from measured reflection and transmission coefficients using walk-off interferometer in the visible regime. A negative-index-material thin film with negative permittivity or (and) permeability can be produced by glancing angle deposition.

  9. Deposition and characterization of hydrogenated diamond-like carbon thin films on rubber seals

    NARCIS (Netherlands)

    Pei, Y.T.; Bui, X.L.; Hosson, J.Th.M. De

    2010-01-01

    Thin films of hydrogenated diamond-like carbon (DLC) have been deposited on hydrogenated nitrile butadiene rubber (HNBR) for reduction of friction and enhancement of wear resistance of dynamic rubber seals. The wax removal and pre-deposition plasma treatment of HNBR substrates are proven to be cruci

  10. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  11. Study of SnS2 thin film deposited by spin coating technique

    Science.gov (United States)

    Chaki, Sunil H.; Joshi, Hardikkumar J.; Tailor, Jiten P.; Deshpande, M. P.

    2017-07-01

    Thin film deposition of SnS2 was done by spin coating technique at ambient temperature. Deposition was done for different spin speed and spin time. The film thickness dependence on spin speed and spin time was studied. The spin speed was varied from 1000 rpm to 2000 rpm and spin time from 2 s to 6 s for constant speed of 1000 rpm. The elemental composition and crystal structure along with the phase of the as-deposited thin film was determined by the energy dispersive analysis of x-ray (EDAX) and x-ray diffraction (XRD) techniques respectively. The as-deposited thin film was found to be near stoichiometric and possess hexagonal crystal structure with determined lattice parameters in good agreement with the reported values. The crystallite size calculated from the XRD data using Scherrer’s formula and Hall-Williamson relation came out to be 9.77 nm and 6.49 nm, respectively. The transmission electron microscopy (TEM) study of spin deposited thin films showed the film to be continuous. Surface study of the as-deposited thin film was done by simple optical microscope and scanning electron microscope (SEM). The study showed that the deposited thin film to be flat and uniform without visible cracks and pores. The optical spectroscopy study of the as-deposited thin film showed that the optical bandgap value decreases with increase in film thickness. The d.c. electrical resistivity variation with temperature for spin coating as-deposited SnS2 film showed that the resistivity decreases with increase in temperature corroborating the semiconducting nature. The resistivity variation plot possesses two slopes. The temperature ranges showing two slopes lay between 300 to 383 K and 384 to 423 K having activation energy values for the two temperature ranges as 0.072 eV and 0.633 eV, respectively. The achieved results are deliberated in details.

  12. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  13. Low-temperature Spin Spray Deposited Ferrite/piezoelectric Thin Film Magnetoelectric Heterostructures with Strong Magnetoelectric Coupling

    Science.gov (United States)

    2014-01-08

    1ITLE AND SUBTITLE 5a CONTRACTNUMBER Low-temperature spin spray deposited ferrite /piezoelectric thin W911NF-09-l-0435 film magnetoelectric...ABSTRACT Low-temperature spin spray deposited ferrite /piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling...energy dissipation, which can be readily integrated in different integrated circuits. Low-temperature spin spray deposited ferrite /pie Approved

  14. Investigation of polycrystalline CdTe thin films deposited by physical vapor deposition, close-spaced sublimation, and sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Hasoon, F.S.; Abulfotuh, F.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    1995-11-01

    CdTe thin films, deposited on different substrate structures by physical vapor deposition, sputtering, and close-spaced sublimation, have been treated with CdCl{sub 2} at several temperatures. The morphology of the films has been studied by atomic force microscopy, and the observations were correlated to results obtained from x-ray diffraction, cathodoluminescence, and minority-carrier lifetime measurements. The samples treated at 400 {degree}C resulted in the best device-quality films, independent of deposition method and underlying substrate structure. For the first time, a nanograin structure was observed in CdTe sputtered samples. copyright {ital 1995} {ital American} {ital Vacuum} {ital Society}.

  15. Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique

    Indian Academy of Sciences (India)

    A A ATTA; M M EL-NAHASS; KHALED M ELSABAWY; M M ABD EL-RAHEEM; A M HASSANIEN; A ALHUTHALI; ALI BADAWI; AMAR MERAZGA

    2016-11-01

    Transparent metal oxide thin films of samarium oxide (Sm$_2$O$_3$) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (E$^{d}_{g}$ ) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm$_2$O$_3$ thin films were found to obey the single oscillator model.

  16. Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments

    Energy Technology Data Exchange (ETDEWEB)

    Georgieva, V; Bogaerts, A [PLASMANT Research Group, Department of Chemistry, University of Antwerp, Universiteitsplein 1, 2610 Antwerp (Belgium); Saraiva, M; Depla, D [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Gent (Belgium); Jehanathan, N; Lebelev, O I, E-mail: violeta.georgieva@ua.ac.b [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B2020 Antwerpen (Belgium)

    2009-03-21

    Using a molecular dynamics model the crystallinity of Mg{sub x}Al{sub y}O{sub z} thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al{sub 2}O{sub 3} film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.

  17. Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

    OpenAIRE

    Roca i Cabarrocas, Pere; Cariou, Romain; Labrune, Martin

    2012-01-01

    International audience; We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most p...

  18. Substrate dependent structural and magnetic properties of pulsed laser deposited Fe3O4 thin films.

    Science.gov (United States)

    Goyal, Rajendra N; Kaur, Davinder; Pandey, Ashish K

    2010-12-01

    Nanocrystalline iron oxide thin films have been deposited on various substrates such as quartz, MgO(100), and Si(100) by pulsed laser deposition technique using excimer KrF laser (248 nm). The orientations, crystallite size and lattice parameters were studied using X-ray diffraction. The XRD results show that the films deposited on MgO and Si substrates are highly oriented and show only (400) and (311) reflections respectively. On the other hand, the orientation of the films deposited on quarts substrate changed from (311) to (400) with an increase in the substrate temperature from 400 degrees C to 600 degrees C, indicating thereby that the film growth direction is highly affected with nature of substrate and substrate temperature. The surface morphology of the deposited films was studied using Atomic Force Microscopy (AFM) and spherical ball like regular features of nanometer size grains were obtained. The magnetic properties were studied by Superconducting Quantum Interference Device (SQUID) magnetometer in the magnetic field +/- 6 Tesla. The magnetic field dependent magnetization (M-H) curves of all the Fe3O4 thin films measured at 5 K and 300 K show the ferrimagnetic nature. The electrochemical sensing of dopamine studied for these films shows that the film deposited on MgO substrate can be used as a sensing electrode.

  19. Underpotential deposition-mediated layer-by-layer growth of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia Xu; Adzic, Radoslav R.

    2017-06-27

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves electrochemically exchanging a mediating element on a substrate with a noble metal film by alternatingly sweeping potential in forward and reverse directions for a predetermined number of times in an electrochemical cell. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis.

  20. Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

    Science.gov (United States)

    De Bonis, A.; Teghil, R.; Santagata, A.; Galasso, A.; Rau, J. V.

    2012-09-01

    Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

  1. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    OpenAIRE

    2015-01-01

    To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition): SILAR (Successive Ionic Layer Adsorption and Reaction) and PCBD (Photo Chemical Bath Deposition), all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap ...

  2. Optical and electrical properties of chemical bath deposited cobalt sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)

    2017-01-15

    Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)

  3. Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices

    Science.gov (United States)

    Okoshi, Masayuki; Kuramatsu, Masaaki; Inoue, Narumi

    2002-06-01

    Silicon dioxide (SiO2) thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of silicone in oxygen atmosphere. Only the side chains of the target were photo-dissociated during ablation to deposit Si-O bonds on a substrate in high laser fluence at about 10 J/cm2. Oxygen gas worked to oxidize the Si-O bonds ejected from the target to from SiO2 thin films at the gas pressure of 4.4 X 10-2 Torr, in addition to reducing the isolated carbon mixed into the films. We also found that the deposited rate could control refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. Thus, a 0.2-micrometers thick SiO2 cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of a 100- micrometers -thick polyester film, and then a 0.6 micrometers -thick SiO2 core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as a waveguide device for a 633-nm line of He-Ne laser.

  4. Superconducting MgB2 Thin Films with Tc ≈ 39 K Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    王淑芳; 戴守愚; 周岳亮; 陈正豪; 崔大复; 许佳迪; 何萌; 吕惠宾; 杨国桢

    2001-01-01

    Superconducting MgB2 thin films were fabricated on Al2 O3 (0001) substrates under ex situ processing conditions.Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of ~39 K, while scanning electron microscopy and x-ray vdiffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.

  5. Stability increase of fuel clad with zirconium oxynitride thin film by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jee, Seung Hyun [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of); Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kim, Jun Hwan; Baek, Jong Hyuk [Recycled Fuel Development Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, 305-600 (Korea, Republic of); Kim, Dong-Joo [Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kang, Seong Sik [Regulatory Research Division, Korea Institute of Nuclear Safety, 19, Guseong-Dong, Yuseong-Gu, Daejeon, 305-338 (Korea, Republic of); Yoon, Young Soo, E-mail: yoonys@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of)

    2012-06-01

    A zirconium oxynitride (ZON) thin film was deposited onto HT9 steel as a cladding material by a metalorganic chemical vapor deposition (MOCVD) in order to prevent a fuel-clad chemical interaction (FCCI) between a U-10 wt% Zr metal fuel and a clad material. X-ray diffraction spectrums indicated that the mixture of structures of zirconium nitride, oxide and carbide in the MOCVD grown ZON thin films. Also, typical equiaxial grain structures were found in plane and cross sectional images of the as-deposited ZON thin films with a thickness range of 250-500 nm. A depth profile using auger electron microscopy revealed that carbon and oxygen atoms were decreased in the ZON thin film deposited with hydrogen gas flow. Diffusion couple tests at 800 Degree-Sign C for 25 hours showed that the as-deposited ZON thin films had low carbon and oxygen content, confirmed by the Energy Dispersive X-ray Spectroscopy, which showed a barrier behavior for FCCI between the metal fuel and the clad. This result suggested that ZON thin film cladding by MOCVD, even with the thickness below the micro-meter level, has a high possibility as an effective FCCI barrier. - Highlights: Black-Right-Pointing-Pointer Zirconium oxynitride (ZON) deposited by metal organic chemical vapor deposition. Black-Right-Pointing-Pointer Prevention of fuel cladding chemical interaction (FCCI) investigated. Black-Right-Pointing-Pointer Interfusion reduced by between metal fuel (U-10 wt% Zr) and a HT9 cladding material. Black-Right-Pointing-Pointer Hydrogenation of the ZON during growth improved the FCCI barrier performance.

  6. Underpotential deposition-mediated layer-by-layer growth of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  7. Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

    1996-01-01

    Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

  8. In situ X-ray diffraction based investigation of crystallization in solution deposited PZT thin films

    Science.gov (United States)

    Nittala, Krishna

    Solution deposited PZT based thin films have potential applications in embedded decoupling capacitors and pulse discharge capacitors. During solution deposition, precursor solution is deposited onto a substrate to obtain an amorphous film. The film is then crystallized by heating it at a high temperature (˜600 - 700°C). Conditions during the crystallization anneal such as precursor stoichiometry in solution, heating rate and adhesion layer in the substrate are known to influence phase and texture evolution in these films. However, a mechanistic understanding of the changes taking place in these thin films during crystallization is lacking. A better understanding of the crystallization processes in these thin films could enable tailoring the properties of thin films to suit specific applications. To explore the crystallization process in solution deposited PZT thin films, high temperature in situ laboratory and synchrotron X-ray diffraction based techniques were developed. Taking advantage of the high X-ray flux available at synchrotron facilities such as beamline 6-ID-B, Advanced Photon Source, Argonne National Laboratory, crystalline phases formed in the thin films during crystallization at the high heating rates (0.5 -- 60°C/s) typically used during film processing could be measured. Using a 2-D detector for these measurements allowed the simultaneous measurement of both phase and texture information during crystallization. Analytical treatment of the unconventional diffraction geometry used during the synchrotron based measurements was performed to develop methodologies for quantitative estimation of texture components. The nominal lead content in the starting solutions and the heating rate used during crystallization was observed to influence the sequence of phases formed during crystallization of the films. In films crystallized at fast heating rates, titanium segregation, probably due to diffusion of titanium from the adhesion layer, was observed. To

  9. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Boyadjiev, S.I., E-mail: boiajiev@gmail.com [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Georgieva, V. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Yordanov, R. [Department of Microelectronics, Technical University of Sofia, 8 Kliment Ohridski Blvd., 1756 Sofia (Bulgaria); Raicheva, Z. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Szilágyi, I.M. [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Budapest University of Technology and Economics, Department of Inorganic and Analytical Chemistry, Szent Gellért tér 4, Budapest, H-1111 (Hungary)

    2016-11-30

    Highlights: • For the first time the gas sensing towards NO{sub 2} of very thin ALD ZnO films is studied. • The very thin ALD ZnO films showed excellent sensitivity to NO{sub 2} at room temperature. • These very thin film ZnO-based QCM sensors very well register even low concentrations. • The sensors have fully reversible sorption and are able to be recovered in short time. • Described fast and cost-effective ALD deposition of ZnO thin films for QCM gas sensor. - Abstract: Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO{sub 2} was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO{sub 2} already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO{sub 2}.

  10. UV optical properties of thin film oxide layers deposited by different processes.

    Science.gov (United States)

    Pellicori, Samuel F; Martinez, Carol L

    2011-10-01

    UV optical properties of thin film layers of compound and mixed oxide materials deposited by different processes are presented. Japan Electron Optics Laboratory plasma ion assisted deposition (JEOL PIAD), electron beam with and without IAD, and pulsed DC magnetron sputtering were used. Comparisons are made with published deposition process data. Refractive indices and absorption values to as short as 145 nm were measured by spectroscopic ellipsometry (SE). Electronic interband defect states are detected that are deposition-process dependent. SE might be effective in identifying UV optical film quality, especially in defining processes and material composition beneficial for high-energy excimer laser applications and environments requiring stable optical properties.

  11. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  12. Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India); Panchal, A.K. [Department of Electrical Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India)

    2016-05-06

    First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.

  13. Characterization of MAPLE deposited WO3 thin films for electrochromic applications

    Science.gov (United States)

    Boyadjiev, S. I.; Stefan, N.; Szilágyi, I. M.; Mihailescu, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Besleaga, C.; Iliev, M. T.; Gesheva, K. A.

    2017-01-01

    Tungsten trioxide (WO3) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζFWHM=25 ns) laser source was used in all experiments. The MAPLE deposited WO3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices.

  14. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Growth and characteristics of tantalum oxide thin films deposited using thermionic vacuum arc technology

    Science.gov (United States)

    Vladoiu, Rodica; Ciupina, Victor; Mandes, Aurelia; Dinca, Virginia; Prodan, Madalina; Musa, Geavit

    2010-11-01

    Tantalum pentoxide (Ta2O5) thin films were synthesized using thermionic vacuum arc (TVA) technology. TVA is an original deposition method using a combination of anodic arc and electron gun system for the growth of thin films from solid precursors under vacuum of 10-6 Torr. The properties of the deposited Ta2O5 thin films were investigated in terms of wettability, refractive index, morphology, and structure. The surface free energy was determined by means of surface energy evaluation system indicating a hydrophilic character and the refractive index was measured by Filmetrics F20 device. The morphology was determined from bright field transmission electron microscopy (TEM) image performed by Philips CM 120 ST TEM system. It exhibits nanoparticles of 3-6 nm diameter smoothly distributed. Selected area electron diffraction pattern revealed the contrast fringes given by complex polycrystalline particles included in the amorphous film. The measured fringes could be indexed using monoclinic structure of Ta2O5.

  16. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States); Mayo, B. [Southern University and AM College, Harding Boulevard, Baton Rouge, Louisiana 70813 (United States)

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350&hthinsp;{degree}C and completely recrystallized after the same treatment at 400&hthinsp;{degree}C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures. {copyright} {ital 1999 American Institute of Physics.}

  17. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Milena A. [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil); Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas, E-mail: tomas.kubart@angstrom.uu.se [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  18. Antimony sulphide thin film as an absorber in chemically deposited solar cells

    Science.gov (United States)

    Messina, Sarah; Nair, M. T. S.; Nair, P. K.

    2008-05-01

    Antimony sulfide thin films (thickness, 500 nm) were deposited on chemically deposited CdS thin films (100 nm) obtained on 3 mm glass substrates coated with a transparent conductive coating of SnO2:F (TEC-15 with 15 Ω sheet resistance). Two different chemical formulations were used for depositing antimony sulfide films. These contained (i) antimony trichloride dissolved in acetone and sodium thiosulfate, and (ii) potassium antimony tartrate, triethanolamine, ammonia, thioacetamide and small concentrations of silicotungstic acid. The films were heated at 250 °C in nitrogen. The cell structure was completed by depositing a 200 nm p-type PbS thin film. Graphite paint applied on the PbS thin film and a subsequent layer of silver paint served as the p-side contact. The cell structure: SnO2:F/CdS/Sb2S3 (i or ii)/PbS showed open circuit voltage (Voc) of 640 mV and short circuit current density (Jsc) above 1 mA cm-2 under 1 kW m-2 tungsten-halogen radiation. Four cells, each of 1.7 cm2 area, were series-connected to give Voc of 1.6 V and a short circuit current of 4.1 mA under sunlight (1060 W m-2).

  19. Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitors

    Science.gov (United States)

    Mardare, A. I.; Mardare, C. C.; Fernandes, J. R. A.; Vilarinho, P. M.; Joanni, E.

    2003-08-01

    Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO2/Ti/Pt substrates with a high deposition rate. The temperatures used ranged between 400 ^circ C and 700 ^circ C. As the deposition temperature was increased, the films assumed a strong (222) preferential orientation. This orientation of the electrodes was reflected on the PZT films, having a very big influence on their ferroelectric behavior. The PZT films made over BPO deposited at high temperature presented high values of remanent polarization (43 μC/cm^2) but indications of high leakage currents could be observed in the hysteresis loops. By using BPO bottom electrodes, a 30% improvement in the fatigue behavior of PZT capacitors when compared with the normal platinum electrodes was observed.

  20. Pulsed electron beam deposition of highly oriented thin films of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, Vimlesh [Materials Chemistry Laboratory, Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Manoharan, Solomon S. [Materials Chemistry Laboratory, Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208016 (India)], E-mail: ssundar@iitk.ac.in

    2008-04-30

    Thin films of polytetrafluoroethylene (PTFE) were deposited by pulsed electron deposition (PED) technique. The transmission electron microscopy (TEM) image of the RT fabricated (20 A thick) film on carbon coated copper grid shows crystalline nature. Infrared spectra show one to one correspondence between PED ablated film and the PTFE bulk target. The asymmetrical and symmetrical -CF{sub 2}- stretching modes were observed at 1220 and 1156 cm{sup -1}, respectively. The -CF{sub 2}- wagging and bending modes occur at 644 and 512 cm{sup -1}, respectively. X-ray diffraction patterns of the film deposited at room temperature (RT) show oriented film along (1 0 0) plane of hexagonal structure and the crystalline nature is retained up to 300 deg. C on vacuum annealing. The room temperature fabricated film shows smooth and pin hole free surface whereas post-annealing brings discontinuity, roughness and pin holes.

  1. Structural and Optical Properties of CdS Thin Film Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    S. Rajpal

    2013-07-01

    Full Text Available In this work we report synthesis and optical characterization of CdS thin films coated on glass substrate. The films were deposited using chemical bath deposition method. Scanning Electron microscopy shows a uniform film of CdS film at particular concentration and dipping time. The Energy Dispersive spectroscopy reveals the presence of Cd and S in the CdS film. X-Ray diffraction confirms the cubic structure of CdS deposited on glass and amorphous nature of glass. Optical and photoluminescence studies were done using UV-Visible spectroscopy and Photoluminescence spectroscopy respectively. We have determined bandgap by analyzing UV-Visible spectra results. Wettability studies were done using Optical Contact Angle, which confirms the hydrophobic nature of the CdS films.

  2. Analysis of cucl thin-film deposition and growth by close-space sublimation

    Science.gov (United States)

    Nicholson, Anthony

    There is a growing need to implement high fidelity, scalable computational models to various thin-film photovoltaic industries. Developing accurate simulations that govern the thermal and species-transport diffusion characteristics within thin-film manufacturing processes will lead to better predictions of thin-film uniformity at varied deposition conditions that ultimately save time, money, and resources. Thin-film deposition and growth of Copper I Chloride (CuCl) by the Close-Space Sublimation (CSS) process was investigated in an extensive range of operating and thermal conditions. A simulation model based on the ANSYS FLUENT RTM solver platform was developed to encompass the kinetic behavior of the CuCl species within the CSS domain while predicting the growth rate at varied system parameters. Surface physics associated with the process, notably sublimation and adsorption, were studied, quantified, and applied to the continuum-based thin-film deposition model. Experimentation of CuCl thin-film growth was performed across a range of substrate and source temperatures for verification of the model's computational accuracy. Furthermore, characterization of the inherent growth mode exhibited by CuCl was studied in conjunction with simulation and experimental tasks. It was concluded that the simulation model provided predictions for the CuCl thickness as a function of temperature within the range of typical CSS conditions. Equally important was the elucidation of the CuCl growth mechanism, which displays a Volmer-Weber growth mode on the Fluorine-doped Tin Oxide coated layer of the substrate. Such knowledge along with the current modeling capabilities will be useful in extending the computational method to predicting the non-uniformities present in CuCl and other thin-film depositions.

  3. Facile Synthesis of Porous-Structured Nickel Oxide Thin Film by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Siamak Pilban Jahromi

    2012-01-01

    Full Text Available Porous-structured nickel oxide (PsNiO was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD method on a nickel foil as a substrate. The results show uniform PsNiO after the oxidization of the nickel thin film at 750∘C for 1 h. X-ray diffraction (XRD indicates formation of the NiO crystalline structure. Field emission scanning electron microscopy (FESEM reveals different morphology on the surface of the nickel foil (sample A and on the nickel thin film (sample B. Comparison of the FESEM results after oxidization shows that the PsNiO on the nickel thin film was more regular and controllable than the NiO layer on the nickel foil. The FESEM images also show that the thickness of the nickel thin film affected the PsNiO size obtained after oxidization. This resulted from the growth of the porous structure at grain boundaries and from the grain sizes. The electrochemical properties of the PsNiO as an electrode are investigated by cyclic voltammetry (CV. These results show the effect of PsNiO size on the current of anodic peak.

  4. Investigation on the pure and fluorine doped vanadium oxide thin films deposited by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Ramamurthi, K., E-mail: krmurthin@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625021, Tamil Nadu (India)

    2016-05-01

    Vanadium oxide and fluorine doped vanadium oxide thin films were deposited on the micro-slide glass substrates at 400 °C by spray pyrolysis technique. Vanadium oxide films were deposited using 0.1 M ammonium meta vanadate aqua solution. Precursor solution used to deposit fluorine doped vanadium oxide films was prepared adding separately 5 wt.%, 10 wt.%, 15 wt.% and 20 wt.% of ammonium fluoride with the 0.1 M ammonium meta vanadate aqua solution. X-ray diffraction results showed that the films are in mixed phases of β-V{sub 2}O{sub 5}, V{sub 2}O{sub 5} and V{sub 3}O{sub 7}. Surface morphology and band gap of these films were modified due to different levels of fluorine doping. The average visible transmittance (500–800 nm) of vanadium oxide films is decreased due to low level concentration of fluorine doping. - Highlights: • Addition of a few ml HCl yielded clear precursor aqua solution. • F doped vanadium oxide films were deposited for less concentration of fluorine. • Low level fluorine doping modified the surface morphology of the thin films. • Direct band gap of vanadium oxide film is slightly increased by fluorine doping.

  5. Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Zhang Xiao-Kang; Yao Qian; Wang Xu-Yang; Chen Guang-Hua; He De-Yan

    2009-01-01

    The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra,h-BN thin films with a wide optical band gap Eg (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970 K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures. In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.

  6. Improved liquid-solid-gas interface deposition of nanoparticle thin films

    Institute of Scientific and Technical Information of China (English)

    Diao Jia-Jie; Chen Guang-De; Qiu Fu-Sheng; Yan Guo-Jun

    2004-01-01

    A liquid-solid-gas interface deposition method to prepare nanoparticle thin films is presented in this paper. The nanoparticles in the part of suspension located close to the solid-liquid-gas interface grow on the substrate under the influence of interface force when the partially immersed substrate moves relatively to the suspension. By using statistical theory of the Brownian motion, growth equations for mono-component and multi-component nanoparticle thin films are obtained and some parameters for deposition process are discussed.

  7. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  8. Electrical bistable characteristics of poly (phenylene sulfide) thin film deposited by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    GUO XiaoChun; DONG GuiFang; QIU Yong

    2007-01-01

    Poly(phenylene sulfide) (PPS) is a well-known organic insulator. However, the PPS thin film, deposited by thermal evaporation in vacuum, showed electrical bistable characteristics. The structure of the PPS thin-film device was glass/ITO/PPS (300 nm)/Au. The thin film can be converted to a high conductance state by applying a pulse of 80 V (5 s), and brought back to a low conductance state by applying a pulse of 100 V (5 s). This kind of thin film is potential for active layer of a memory device. The critical voltage of the device is about 40 V, while the read-out voltage is 5 V. We tentatively ascribe the bistable phenomenon to the charge transfer from S to C atoms in the PPS molecule chains.

  9. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  10. Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    赵占霞; 崔容强; 孟凡英; 于化丛; 周之斌

    2004-01-01

    This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.

  11. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.

  12. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  13. Influence of Deposition Temperature on the Structure Of Si3N4 Thin Film Prepared By MWECR-PECVD

    Institute of Scientific and Technical Information of China (English)

    肖化; 陈俊芳; 张镇西

    2004-01-01

    The Si3N4 thin film is prepared by MWECR-PECVD at different deposition temperature and the structure of the Si3N4 thin film is investigated. The results indicate that the structure of the Si3N4 thin film prepared at low deposition temperature is in the amorphous phase. However, when the deposition temperature increases to 280℃, the Si3N4 thin film changes to crystalline -Si3N4 . With a further increase of the deposition temperature, the grain of the Si3N4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure of the Si3N4 thin film prepared at 280℃ is of a crystalline structure.

  14. Ethanol Sensing Properties of Nanosheets ZnO Thin Films Prepared by Chemical Bath Deposition

    Science.gov (United States)

    Julia, Sri; Nururddin, Ahmad; Nugraha, Suyatman; Yuliarto, Brian

    2011-12-01

    Nanosheets ZnO thin films were successfully fabricated on alumina substrate by chemical bath deposition method using Zinc Nitrate Tetra hydrate as precursor. Films were annealed at 300 °C for 30 minutes and observed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-Ray Spectroscopy (EDS) to know crystal phase and structure, surface morphology, and elemental composition respectively. The gas sensing performance of ZnO thin films was studied on exposure to ethanol gas sensing in various concentration (300 and 600 ppm). The films showed higher response towards ethanol gas sensing at optimized temperature of 250 °C and exhibited excellent sensitivity of 62.45% upon exposure 300 ppm and 69% upon exposure of 600 ppm ethanol gas sensing. Further, the response and recovery times of ZnO thin films to ethanol become shorter at higher operating temperatures. A possible mechanism of ethanol sensing has been explained.

  15. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  16. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  17. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    Science.gov (United States)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  18. A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-03-01

    Full Text Available The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H thin film transistors (TFTs has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD and hot-wire chemical vapor deposition (HW-CVD at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50% can be deposited by HW-CVD all the way down to room temperature.

  19. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    Science.gov (United States)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  20. Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

    Science.gov (United States)

    Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

    2014-11-05

    Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

  1. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    Science.gov (United States)

    Perrone, A.; Gontad, F.; Lorusso, A.; Di Giulio, M.; Broitman, E.; Ferrario, M.

    2013-11-01

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ-2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10-5) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed.

  2. Analysis of chemically deposited CdSe and CdS thin films

    CERN Document Server

    Osuji, R U

    2002-01-01

    We have successfully deposited quality polycrystalline thin films of CdSe and CdS on Corning 7059 glass slides by the electroless chemical bath technique at room temperature (~27 $^\\circ$C). X-ray analysis confirmed the successful deposition of CdSe and CdS thin films. Our grown CdSe film thickness ranged from 0.10 $\\mu$m. to 0.80 $\\pm$ 0.01 $\\mu$m and the CdS film thickness ranged from 0.10 $\\mu$m to 1.00 $\\pm$ 0.01 $\\mu$m. The scanning electron micrograph of the films reveals uniform film surface. The energy gaps, $E_g$ determined for our CdSe and CdS films have average values of 1.70 $\\pm$ 0.04 eV and 2.15 $\\pm$ 0.04 eV respectively. The films have high absorbance in the 0.35 $\\mu$m - 0.85 $\\mu$m range. These qualities make them suitable for use in thin film solar cell technology.

  3. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    Science.gov (United States)

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  4. SnOx Thin Films Deposited by Reactive Magnetron Sputtering for Microbatteries Anodes

    Institute of Scientific and Technical Information of China (English)

    XING Guang-jian; YANG Zhi-min; SHEN Wan; MAO Chang-hui; DU Jun

    2004-01-01

    SnOx thin films, with various oxygen deficiencies, are deposited from a Sn target on to silicon substratesby reactive magnetron sputtering. The SnOx films are characterized by X-ray diffraction ( XRD ) and X-ray photoelectron spectroscopy(XPS). Influences of deposition conditions such as oxygen partial pressure and annealing temperature on the characteristicsof the films are discussed in detail. The high reversible capacity and cycle performance characteristics of SnOxare also described. The results show that stoichiometric parameter x increases with the increase in oxygen partial pressure. The chargedischarge performance of the SnOxfilms is found to be dependent on x value.

  5. A novel electron beam evaporation technique for the deposition of superconducting thin films

    Science.gov (United States)

    Krishna, M. G.; Muralidhar, G. K.; Rao, K. N.; Rao, G. M.; Mohan, S.

    1991-05-01

    Superconducting thin films of BiSrCaCuO have been deposited using a novel electron beam evaporation technique. In this technique the crucible has a groove around its circumference and rotates continuously during deposition. The source material is loaded in the form of pellets of the composite. Both oxides as well as flourides have been used in the starting material and a comparison of the film properties has been made. The best film was obtained on a MgO(100) substrate with a Tc onset at 85 K and Tc zero at 77 K using calcium flouride in the source material.

  6. Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Gyorgy, E.; Grigorescu, S.; Socol, G.; Mihailescu, I. N.; Janackovic, D.; Dindune, A.; Kanepe, Z.; Palcevskis, E.; Zdrentu, E. L.; Petrescu, S. M.

    2007-07-01

    Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO 2 doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF * ( λ = 248 nm, τ ≥ 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 °C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

  7. Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gyorgy, E. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Grigorescu, S. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Socol, G. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Janackovic, D. [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Dindune, A. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Kanepe, Z. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Palcevskis, E. [Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Zdrentu, E.L. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania); Petrescu, S.M. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania)

    2007-07-31

    Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO{sub 2} doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF{sup *} ({lambda} = 248 nm, {tau} {>=} 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 deg. C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

  8. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  9. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    Science.gov (United States)

    Stöber, L.; Konrath, J. P.; Krivec, S.; Patocka, F.; Schwarz, S.; Bittner, A.; Schneider, M.; Schmid, U.

    2015-07-01

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.

  10. Photoemission Spectroscopy Characterization of Attempts to Deposit MoO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Irfan

    2011-01-01

    Full Text Available Attempts to deposit molybdenum dioxide (MoO2 thin films have been described. Electronic structure of films, deposited by thermal evaporation of MoO2 powder, had been investigated with ultraviolet photoemission and X-ray photoemission spectroscopy (UPS and XPS. The thermally evaporated films were found to be similar to the thermally evaporated MoO3 films at the early deposition stage. XPS analysis of MoO2 powder reveals presence of +5 and +6 oxidation states in Mo 3d core level along with +4 state. The residue of MoO2 powder indicates substantial reduction in higher oxidation states while keeping +4 oxidation state almost intact. Interface formation between chloroaluminum phthalocyanine (AlPc-Cl and the thermally evaporated film was also investigated.

  11. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    Science.gov (United States)

    Tripathi, T. S.; Yadav, C. S.; Karppinen, M.

    2016-04-01

    We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  12. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    T. S. Tripathi

    2016-04-01

    Full Text Available We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD from Cu(thd2, Cr(acac3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  13. ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

    Science.gov (United States)

    Zhang, Y.; Dang, X. Y.; Jin, J.; Yu, T.; Li, B. Z.; He, Q.; Li, F. Y.; Sun, Y.

    2010-09-01

    In this combined film thickness, scanning electron microscopy (SEM), X-ray diffraction and optical properties study, we explore the effects of different stirring speeds on the growth and optical properties of ZnS film deposited by CBD method. From the disclosed changes of thickness of ZnS film, we conclude that film thickness is independent of the stirring speeds in the heterogeneous process (deposition time less than 40 min), but increases with the stirring speeds and/or deposition time increasing in the homogeneous process. Grazing incident X-ray diffraction (GIXRD) and the study of optical properties disclosed that the ZnS films grown with different stirring speeds show partially crystallized film and exhibit good transmittance (70-88% in the visible region), but the stirring speeds cannot give much effects on the structure and optical properties in the homogeneous process.

  14. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  15. Nano-Impact (Fatigue Characterization of As-Deposited Amorphous Nitinol Thin Film

    Directory of Open Access Journals (Sweden)

    Rehan Ahmed

    2012-08-01

    Full Text Available This paper presents nano-impact (low cycle fatigue behavior of as-deposited amorphous nitinol (TiNi thin film deposited on Si wafer. The nitinol film was 3.5 µm thick and was deposited by the sputtering process. Nano-impact tests were conducted to comprehend the localized fatigue performance and failure modes of thin film using a calibrated nano-indenter NanoTest™, equipped with standard diamond Berkovich and conical indenter in the load range of 0.5 mN to 100 mN. Each nano-impact test was conducted for a total of 1000 fatigue cycles. Depth sensing approach was adapted to understand the mechanisms of film failure. Based on the depth-time data and surface observations of films using atomic force microscope, it is concluded that the shape of the indenter test probe is critical in inducing the localized indentation stress and film failure. The measurement technique proposed in this paper can be used to optimize the design of nitinol thin films.

  16. A versatile new method for synthesis and deposition of doped, visible light-activated TiO2 thin films

    DEFF Research Database (Denmark)

    In, Su-il; Kean, A.H.; Orlov, A.

    2009-01-01

    A flexible and widely applicable method allows the deposition of carbon-doped visible light-activated photocatalytic TiO2 thin films on a variety of substrates.......A flexible and widely applicable method allows the deposition of carbon-doped visible light-activated photocatalytic TiO2 thin films on a variety of substrates....

  17. Low temperature deposition of silver sulfide thin films by AACVD for gas sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Syed Tajammul, E-mail: dr_tajammul@yahoo.ca [National Centre for Physics, Quaid-i-azam University, Islamabad (Pakistan); Bakar, Shahzad Abu [National Centre for Physics, Quaid-i-azam University, Islamabad (Pakistan); Department of Chemistry, Quaid-e-azam University, Islamabad (Pakistan); Saima, BiBi; Muhammad, Bakhtiar [Department of Chemistry, Hazara University, Mansehra (Pakistan)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer Silver sulfide thin films were deposited by aerosol assisted chemical vapor deposition from a single source precursor [Ag(S{sub 2}CN (C{sub 2}H{sub 5}){sub 2}){sub 3}]{sub 2} (1). Black-Right-Pointing-Pointer The precursor (1), prepared in high yield by simple reported chemical procedure, was characterized and undergoes facile decomposition at 400 Degree-Sign C. Black-Right-Pointing-Pointer The deposited thin films were characterized by SEM, EDX and XRD which suggests the formation of impurity-free mesoporous Ag{sub 2}S, with well defined particles evenly distributed in the range of 0.3-0.5 {mu}m. Black-Right-Pointing-Pointer The optical bandgap energy of the thin film was estimated, and it is about 1.33 eV. Black-Right-Pointing-Pointer The thin films were investigated for the gas sensor applications. - Abstract: Crack free Ag{sub 2}S thin films were deposited on glass substrates by aerosol assisted chemical vapor deposition (AACVD) using [Ag(S{sub 2}CN (C{sub 2}H{sub 5}){sub 2}){sub 3}]{sub 2} (1) as a precursor. Thin films were deposited from solution of methanol at 400 Degree-Sign C and characterized by X-ray diffraction (XRD), UV-vis spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. SEM image of thin film showed well-defined and porous surface morphology with an average particle size of 0.3-0.5 {mu}m. Optical band gaps energy of 1.33 eV was estimated for Ag{sub 2}S thin film, by extrapolating the linear part of the Tauc plot recorded at room temperature. The gas sensing characteristics of the novel gas sensors based on Ag{sub 2}S were investigated for the detection carbon monoxide. The effect of operating temperature and change in gas concentration on the performance of carbon monoxide were investigated. The sensing mechanism of sensor was discussed.

  18. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  19. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  20. Characterization of sputter-deposited TiPdNi thin films

    Institute of Scientific and Technical Information of China (English)

    田青超; 吴建生

    2002-01-01

    TiPdNi thin films were prepared by magne tron sputtering onto unheated glass and silicon substrate. Atomic force microscope, energy-dispersive X-ray mi croanalyzer, X-ray diffractometer, differential scanning calorimeter and optical microscope were used to characterize the films. It is found that the surface m orphology of the films change during the sputtering process and a shift of about 3%Ti(mole fraction) content from the center to the edge of the substrate occurs. The freestanding as-deposited films undergo crystallization followed by three kinds of cooling conditions. For all these heat-treated films, B2→B19→B19′ two- stage phase transformation takes place. Many Ti2Ni and Ti2Pd type of precipitates are detected in the films. The constraint films on silicon substrate are crystallized at high temperature. After crystallization, the films show a two-way shape memory effect.

  1. Plasma and Laser-Enhanced Deposition of Powders and Thin Films.

    Science.gov (United States)

    David, Moses

    The objective of this thesis has been the development of novel plasma and laser based techniques for the deposition and characterization of thin films and nano-scale powders. The different energy sources utilized for excitation and break -down of reactive species prior to deposition include an RF plasma discharge, an excimer laser and a CO _2 laser. Nanometer-scale (10-20 nm) powders and thin films of aluminum nitride (AlN) have been successfully deposited in a glow discharge by reacting trimethylaluminum and ammonia. Macroquantities (~800 mg/hr) of powder have been collected at the centers of two vortices around which the reactant gases swirl. Powders of AlN have large surface areas (85 m^2/g) and are free from oxygen contamination. Diamond-like-carbon (DLC) films have been deposited from ternary mixtures of butadiene, argon and hydrogen. DLC films have been etched in O _2 and CF_4/O _2 plasmas. The etching behavior was correlated with the deposition feed gas composition by combining the etch rate, bias voltage during deposition and the deposition rate into a new non-dimensional number. Two new processes for depositing copper films have been developed. The first technique involves the hydrogen plasma reduction of copper formate films and the second technique involves the reactive excimer laser ablation of copper formate. Particle forming plasmas have been characterized by measuring the light scattering intensity during the deposition of silicon nitride from silane/ammonia plasmas. Both spatial variations and transients during the plasma start -up and shut-off steps have been measured. The ultraviolet (vacuum ultraviolet and extreme ultraviolet) reflectance characteristics of AlN, DLC and SiC thin films has been measured. AlN and SiC films exhibit a relatively high (~20-40%) reflectance in the different regions of the ultraviolet spectrum. An improved algorithm has been developed for estimating thin film parameters such as thickness, refractive index, band-gap, and

  2. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  3. Pulsed laser deposition of tungsten carbide thin films on silicon (100) substrate

    Science.gov (United States)

    Suda, Y.; Nakazono, T.; Ebihara, K.; Baba, K.

    1997-01-01

    A method of synthesizing tungsten carbide (WC) thin films by a pulsed YAG laser deposition is investigated. WC thin films are deposited on silicon (100) substrates by using WC5%Co alloy targets. Glancing angle X-ray diffraction shows that the strong peaks of W 2C appear at the substrate temperature of 500°C. Beside the strong peaks of W 2C, weak peaks of WC and W 3Co 3C appear at the substrate temperature of 650°C. Auger electron spectroscopy shows that the almost stoichiometric WC films are deposited at the methane gas pressure of 1.0 Pa. Morphological features of the samples have been obtained by employing the technique of scanning electron microscopy. X-ray photoelectron spectroscopy has been used to obtain structural and compositional information about the samples.

  4. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  5. Characterization of chemical bath deposited buffer layers for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Dwyer, D.; Efstathiadis, H.; Haldar, P. [College of Nanoscale Science and Engineering, University at Albany - State University of New York, 257 Fuller Rd., Albany, NY 12203 (United States); Sun, R. [Angstrom Sun Technologies Inc., 33 Nagog Park, Acton, MA 01720 (United States)

    2010-10-15

    Cadmium sulfide (CdS), indium sulfide (In{sub 2}S{sub 3}) and zinc sulfide (ZnS) thin films have been deposited by chemical bath deposition (CBD) for buffer layer applications in Cu-chalcopyrite-based thin film solar cells. Films were characterized by scanning electron microscopy (SEM), UV-Vis transmission, X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXRD), and spectroscopic ellipsometry. Results indicate CdS can be deposited with low oxygen content and high light transmission over 245-1700 nm. CBD-ZnS and CBD-InS both exhibit 5-10% less light transmission than CdS in the same thickness range. In terms of light transmission and degree of impurities CdS appears to be a better buffer material than CBD-ZnS or CBD-InS. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Enhanced antireflection properties of silica thin films via redox deposition and hot-water treatment

    Energy Technology Data Exchange (ETDEWEB)

    Chigane, Masaya; Hatanaka, Yoshiro; Shinagawa, Tsutomu [Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan)

    2010-06-15

    Silicon oxide (SiO{sub x}) thin film was deposited onto poly(ethylene terephthalate) substrate by the reduction of an aqueous solution containing ammonium hexafluorosilicate, dimethylamine borane and cetyltrimethylammonium bromide (CTAB). Post-deposition hot water treatment: immersion of the film in water at 333 K dissolved CTAB producing nanopores in silica (SiO{sub 2}) film and remarkably enhanced the antireflection property of the film: 0.1% at 550 nm of wavelength. The films before and after the treatment were compared via characterization by means of X-ray photoelectron spectroscopic depth profile, X-ray diffraction and transmission electron microscopy. The decrease of refractive index dispersion by the porous silica films, attributing to the low reflection, was verified by effective medium approximation analysis. (author)

  7. Influence of deposition rate on the properties of ZrO2 thin films prepared in electron beam evaporation method

    Institute of Scientific and Technical Information of China (English)

    Dongping Zhang(张东平); Meiqiong Zhan(占美琼); Ming Fang(方明); Hongbo He(贺洪波); Jianda Shao(邵建达); Zhengxiu Fan(范正修)

    2004-01-01

    ZrO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. Thin films deposited in our study are inhomogeneous, and the inhomogeneity is enhanced with the deposition rate increasing.

  8. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    Science.gov (United States)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  9. Bath Parameter Dependence of Chemically-Deposited Copper Selenide Thin Film

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on to glass substrate. Different thin films (0.2-0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe.

  10. Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

    Science.gov (United States)

    Schubert, J.; Schöning, M. J.; Schmidt, C.; Siegert, M.; Mesters, St.; Zander, W.; Kordos, P.; Lüth, H.; Legin, A.; Mourzina, Yu. G.; Seleznev, B.; Vlasov, Yu. G.

    One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

  11. Chemical solution deposition of YBCO thin film by different polymer additives

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Li, G.; Pu, M.H.; Sun, R.P.; Zhou, H.M.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)], E-mail: yzhao@swjtu.edu.cn

    2008-09-15

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around T{sub c} = 90 K as well as high J{sub c} (0 T, 77 K) over 3 MA/cm{sup 2}.

  12. Chemical solution deposition of YBCO thin film by different polymer additives

    Science.gov (United States)

    Wang, W. T.; Li, G.; Pu, M. H.; Sun, R. P.; Zhou, H. M.; Zhang, Y.; Zhang, H.; Yang, Y.; Cheng, C. H.; Zhao, Y.

    2008-09-01

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around Tc = 90 K as well as high Jc (0 T, 77 K) over 3 MA/cm 2.

  13. Biomimetic formation of titania thin films: effect of amino acids on the deposition process.

    Science.gov (United States)

    Durupthy, Olivier; Jeurgens, Lars P H; Bill, Joachim

    2011-05-01

    Different types of amino acids have been used as additives to control the aqueous deposition of titanium dioxide thin films on single-crystal Si wafers. Thin titania films can be obtained through a chemical bath deposition (CBD) process using TiCl₄ as a precursor in an aqueous solution at temperatures below 100 °C. The addition of amino acids to the deposition solution was shown to reduce the thickness and roughness of the films and to increase their density. These protein building blocks were employed to modify the deposition rate as well as the size of aggregates that form the film. The thickness, crystallinity, morphology and composition of the grown films were characterized by a variety of techniques, including XRD, XPS, AFM and SEM. The consequences of the type of the amino acid additive (and its concentration in the solution) on the microstructural evolutions of the deposed films are thus revealed and discussed on the basis of the organic-inorganic interactions in solution and at the film surface.

  14. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    Science.gov (United States)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  15. Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

    OpenAIRE

    Heri Sutanto; Sufwan Durri; Singgih Wibowo; Hady Hadiyanto; Eko Hidayanto

    2016-01-01

    Zinc oxide (ZnO) and aluminum doped zinc oxide (ZnO:Al) thin films have been deposited onto a glass substrate by sol-gel spray coating method at atmospheric pressure. X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer have been used to characterize the films. XRD spectra indicated that all prepared thin films presented the wurtzite hexagonal structure. SEM images exhibited rootlike morphology on the surface of thin films and the shortest root diameter...

  16. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    Science.gov (United States)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  17. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  18. Electron beam deposition and characterization of thin film Ti-Ni for shape memory applications

    Institute of Scientific and Technical Information of China (English)

    NOH Hae-Yong; JEE Kwang-Koo; LEE Kyu-Hwan; LEE Young-Kook

    2006-01-01

    Thin film of Ti-Ni alloy has a potential to perform the microactuation functions required in the microelectromechanical system (MEMS).It is essential, however, to have good uniformity in both chemical composition and thickness to realize its full potential as an active component of MEMS devices.Electron beam evaporation technique was employed in this study to fabricate the thin films of Ti-Ni alloy on different substrates.The targets used for the evaporation were first prepared by electron beam melting.The uniformity of composition and microstructure of the thin films were characterized by electron probe microanalysis (EPMA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM).The mechanical property of the thin films was evaluated by the nano-indentation test.The martensitic transformation temperature was measured by differential scanning calorimetry (DSC).It is confirmed that the chemical composition of deposited thin films is identical to that of the target materials.Furthermore, results from depth profiling of the chemical composition variation reveal that the electron beam evaporation process yields better compositional homogeneity than other conventional methods such as sputtering and thermal evaporation.Microstructural observation by TEM shows that nanometer size precipitates are preferentially distributed along the grain boundaries of a few micron size grains.The hardness and elastic modulus of thin films decreases with an increase in Ti contents.

  19. Structural and magnetic properties of pulsed laser deposited Fe–SiC thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh [Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee, UK 247 667 (India); Chandra, Ramesh, E-mail: ramesfic@iitr.ac.in [Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee, UK 247 667 (India); Goyat, Manjeet S. [University of Petroleum & Energy Studies, Dehradun, Uttarakhand 248007 (India); Mishra, Raghwesh; Tiwari, Rajesh K.; Saxena, A.K. [Applied Chemistry Division, Defence Materials & Stores Research & Development Establishment (DMSRDE), GT Road, Kanpur, UP 208013 (India)

    2015-03-31

    Structural and magnetic properties of Fe–SiC thin films have been studied. The Fe–SiC thin films were fabricated by pulsed laser deposition on Si (100) substrate and isochronally annealed at 1073 K and 1273 K in argon atmosphere for 2.5 h. The crystalline ordering of SiC into β-SiC phase and growths of other phases like Fe{sub 3}Si, SiO{sub 2} and FeSiO{sub 3} during annealing were investigated by X-ray diffraction and X-ray photoelectron spectroscopy measurements. The morphology of thin films was changed from voided structure to dense pyramidal-like structure due to annealing. A continuous decrease in the saturation magnetization and non-monotonic change in coercivity of Fe–SiC thin films were observed with increase in annealing temperature. - Highlights: • Structural and magnetic properties of Fe–SiC thin films have been studied. • Crystalline ordering of SiC into β-SiC phase was obtained at T ≥ 800 °C. • Annealed Fe–SiC thin films show ferromagnetic hysteresis at room temperature. • Coercivity was found to be dependent on the annealing temperature.

  20. Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong [Multimedia University, Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Setapak, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

    2010-08-15

    Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm{sup 2} to 8 J/cm{sup 2}. The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

  1. Manifestation of unusual size effects in granular thin films prepared by pulsed laser deposition

    Science.gov (United States)

    Sergeenkov, S.; Cichetto, L.; Diaz, J. C. C. A.; Bastos, W. B.; Longo, E.; Araújo-Moreira, F. M.

    2016-11-01

    We demonstrate manifestation of some rather unusual size effects in granular thin films prepared by a pulsed laser deposition technique. We observed that the temperature dependence of resistivity ρ(T) notably depends on the relation between the grain size Rg and the film thickness d. Namely, more granular LaNiO3 thin films (with small values of Rg) grown on LaAlO3 substrate are found to follow a universal ρ(T) ∝T 3 / 2 law for all the measured temperatures. While less granular thin films (with larger values of Rg), exhibit a more complicated behavior accompanied by a clear-cut crossover (around Tcr = 200 K), from ρ(T) ∝T 3 / 2 (for 20 K temperature size effects (when an average grain size Rg becomes comparable with the thermal de Broglie wavelength Λ) leading to the crossover temperature Tcr ∝(d /Rg) 2 .

  2. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Science.gov (United States)

    Liang, Yangang; Yao, Yangyi; Zhang, Xiaohang; Hsu, Wei-Lun; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Dagenais, Mario; Takeuchi, Ichiro

    2016-01-01

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  3. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  4. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Yangang Liang

    2016-01-01

    Full Text Available We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  5. Spray pyrolytic deposition of polycrystalline Cu{sub 2}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo-Young [Clean Energy Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of); Palve, Balasaheb M. [Department of Physics, University of Pune, Pune 411 007 (India); Pathan, Habib M. [Clean Energy Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of); Department of Physics, University of Pune, Pune 411 007 (India); Joo, Oh-Shim, E-mail: joocat@kist.re.kr [Clean Energy Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of polycrystalline Cu{sub 2}S films with band gap of 1.5 eV which is truly useful for solar cell applications. Black-Right-Pointing-Pointer Deposition has been carried out without any complexing agent. Black-Right-Pointing-Pointer Films are compact. - Abstract: Polycrystalline copper sulfide (Cu{sub 2}S) thin films were deposited by spray pyrolysis using aqueous solutions of copper nitrate and thiourea without any complexing agent at substrate (deposition) temperature of {approx}200 Degree-Sign C. The films were deposited onto glass and ITO-coated glass substrates. The deposited films were observed to be blackish brown in color, well adherent to the substrate, pin-hole free and uniform. The structural, surface morphological and optical properties of the films were carried out by means of X-ray diffraction, scanning electron microscopy and optical absorbance measurement techniques. XRD analysis showed that deposited films are chemically close to chalcocite, Cu{sub 2}S. The optical band gap was calculated to be 1.5 eV.

  6. Oxygen content of YBaCuO thin films during growth by pulsed laser deposition

    NARCIS (Netherlands)

    Garcia lopez, F.J.; Garcia lopez, J.J.; Blank, David H.A.; Rogalla, Horst

    1998-01-01

    The oxidation ability of the laser plasma plume during in situ formation of YBa2Cu3O6+x (YBaCuO) thin films has been studied as a function of the deposition conditions. A quenching technique has been used immediately after termination of growth to avoid any oxygen in or out-diffusion during the

  7. Optimization of Ta2O5 optical thin film deposited by radio frequency magnetron sputtering.

    Science.gov (United States)

    Shakoury, R; Willey, Ronald R

    2016-07-10

    Radio frequency magnetron sputtering has been used here to find the parameters at which to deposit Ta2O5 optical thin films with negligible absorption in the visible spectrum. The design of experiment methodology was employed to minimize the number of experiments needed to find the optimal results. Two independent approaches were used to determine the index of refraction n and k values.

  8. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  9. Atomistic simulation of Cu-Ta thin film deposition and other phenomena

    NARCIS (Netherlands)

    Klaver, T.P.C.

    2004-01-01

    Tantalum (Ta) is a metal with good properties to act as a diffusion barrier material in computer chips, where it should prevent the mixing of Cu into Si and SiO. The deposition of thin Cu films onto various Ta substrates has been studied through molecular dynamics simulations, using either empirical

  10. Electrical conductivity and crystallization of amorphous bismuth ruthenate thin films deposited by spray pyrolysis.

    Science.gov (United States)

    Ryll, Thomas; Brunner, Andreas; Ellenbroek, Stefan; Bieberle-Hutter, Anja; Rupp, Jennifer L M; Gauckler, Ludwig J

    2010-11-14

    Amorphous oxide thin films with tailored functionality will be crucial for the next generation of micro-electro-mechanical-systems (MEMS). Due to potentially favorable electronic and catalytic properties, amorphous bismuth ruthenate thin films might be applied in this regard. We report on the deposition of amorphous bismuth ruthenate thin films by spray pyrolysis, their crystallization behavior and electrical conductivity. At room temperature the 200 nm thin amorphous films exhibit a high electrical conductivity of 7.7 × 10(4) S m(-1), which was found to be slightly thermally activated (E(a) = 4.1 × 10(-3) eV). It follows that a long-range order of the RuO(6) octahedra is no precondition for the electrical conductivity of Bi(3)Ru(3)O(11). Upon heating to the temperature range between 490 °C and 580 °C the initially amorphous films crystallize rapidly. Simultaneously, a transition from a dense and continuous film to isolated Bi(3)Ru(3)O(11) particles on the substrate takes place. Solid-state agglomeration is proposed as the mechanism responsible for disintegration. The area specific resistance of Bi(3)Ru(3)O(11) particles contacted by Pt paste on gadolinia doped ceria electrolyte pellets was found to be 7 Ω cm(2) at 607 °C in air. Amorphous bismuth ruthenate thin films are proposed for application in electrochemical devices operating at low temperatures, where a high electrical conductivity is required.

  11. Enhanced electrical and optical properties of CdS:Na thin films by photochemical deposition

    Science.gov (United States)

    Kumar, V. Nirmal; Suriakarthick, R.; Gopalakrishnan, R.; Hayakawa, Y.

    2017-06-01

    CdS:Na thin film was deposited on a glass substrate by photochemical deposition from aqueous solution contained CdSO4.5H2O and Na2S2O3 as cation and anion sources, respectively. The anion source Na2S2O3 served as Na dopant source. The deposited film exhibited cubic phase of CdS and incorporation of Na was revealed from X-ray diffraction study. The incorporation of Na in CdS changed the surface morphology from spherical to nano rods. CdS:Na thin film showed blue shift in its absorption spectrum which was more desirable for transmitting higher energy photons (visible region) in thin film solar cells. The Raman analysis confirmed 1 LO and 2 LO process at 297 and 593 cm-1, respectively. The carrier concentration of CdS increased with the inclusion of Na and its resistivity value decreased. Both the electrical and optical properties of CdS were enhanced in CdS:Na thin films which was desirable as a window layer material for photovoltaic application.

  12. Characterization of Cu{sub 2−x}Se thin films synthesized from electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tung-Cheng [Department of Materials Engineering, Tatung University, Taipei, Taiwan (China); Hu, Yi, E-mail: huyi@ttu.edu.tw [Department of Materials Engineering, Tatung University, Taipei, Taiwan (China); Chang, Wen-Bing [Department of Computer Science and Information Engineering, Taipei Chengshih University of Science and Technology, Taipei, Taiwan (China)

    2014-02-15

    Highlights: • Cu{sub 2−x}Se films were electrodeposited on Mo substrate with CuSO{sub 4} and H{sub 2}SeO{sub 3}. • The deposited films were near-stoichiometric Cu{sub 2−x}Se with FCC structure. • The direct band gap for Cu{sub 2−x}Se thin films are in the range of 2.14–2.18 eV. -- Abstract: Copper selenide (Cu{sub 2−x}Se) thin films were potentiostatically deposited on molybdenum substrate with an aqueous solution of CuSO{sub 4} and H{sub 2}SeO{sub 3}. The effect of the deposition potential on the microstructure and electrical properties of the thin films were studied using FESEM, HRTEM, and two probe conducting measurements. The morphologies of the films changed from densely packed nanoparticles to the plate-like grains growing perpendicular to the substrate. In addition, these plates were composed of nanoparticles of about 100–200 nm in size. The nanoparticles were verified to be the face centered cubic (FCC) Cu{sub 2−x}Se from XPS and HRTEM analysis. The direct band gap for the Cu{sub 2−x}Se thin films was in the range of 2.14–2.18 eV measured from UV–vis absorption edge. The electrical conductivity of the thin films increased from 4.51 × 10{sup −3} to 7.08 × 10{sup −3} (Ω m){sup −1} as the Cu/Se ratio decreased from 1.92 to 1.89.

  13. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  14. Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

    Science.gov (United States)

    Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

    2017-09-01

    In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

  15. High entropy alloy thin films deposited by magnetron sputtering of powder targets

    Energy Technology Data Exchange (ETDEWEB)

    Braeckman, B.R., E-mail: BertR.Braeckman@Ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Boydens, F. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Hidalgo, H.; Dutheil, P. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Jullien, M. [Institut Jean Lamour, Université de Lorraine, UMR CNRS, 7198 Vandoeuvre-lès-Nancy (France); Thomann, A.-L. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Depla, D. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium)

    2015-04-01

    High entropy alloys (HEA) contain at least five principal elements in equimolar or near-equimolar ratios. These materials crystallize typically as a face-centered cubic (FCC), body-centered cubic (BCC) solid solution or as a mixture of these two crystal structures. AlCoCrCuFeNi thin films were deposited by magnetron sputtering of homemade pressed powder targets. Four targets with different compositions were sputtered under various conditions to modify the alloy composition. Scanning electron microscopy and energy-dispersive X-ray spectroscopy were used to study the surface morphology and composition whereas X-ray diffraction and X-ray reflectivity provided information regarding the phase formation and density of the films. It is suggested that, when taking into account the atomic radii of the constituent elements, the sputter deposited alloy thin films can be topologically regarded as binary alloys of the form Al-(CoCrCuFeNi). If the concentration of the largest atom (Al) increases, a transition from FCC to BCC is noticed. This structure transition could be attributed to a critical lattice distortion. - Highlights: • AlCoCrCuFeNi thin films were deposited by sputtering pressed power targets. • Sputter deposition of powder targets allows good control over the film composition. • With increasing Al fraction, a crystallographic structure transition was noticed. • The transition was made semi-quantitative with Egami's atomic-level stress theory.

  16. Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films

    Science.gov (United States)

    Politano, Grazia Giuseppina; Versace, Carlo; Vena, Carlo; Castriota, Marco; Ciuchi, Federica; Fasanella, Angela; Desiderio, Giovanni; Cazzanelli, Enzo

    2016-11-01

    Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover, using electrophoretic deposition, we have found a higher value of optical density for GO thin films, not observed in GO films obtained with other deposition methods.

  17. Ellipsometric spectroscopy study of cobalt oxide thin films deposited by sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E.; Martinez-Flores, J.C. [Departamento de Ingenieria de Procesos e Hidraulica, UAM ? Iztapalapa, Av. Rafael Atlixco No. 186, Col. Vicentina, Mexico DF 09340 (Mexico); Huerta, L. [Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Avila, A.; Ortega-Lopez, M. [Depto. Ingenieria Electrica, SEES, CINVESTAV- IPN, Mexico DF 07360 (Mexico)

    2006-09-22

    Due to their unique optical properties, solar selective coatings enhance the thermal efficiency of solar photothermal converters. Hence it seems to be interesting to study the optical properties of promising materials as solar selective coatings. In an earlier work, it was demonstrated that sol-gel deposited cobalt oxide thin films possess suitable optical properties as selective coatings. In this work, cobalt oxide thin films were prepared by same technique and their optical properties were analyzed as a function of the dipping time of the substrate in the sol, using the spectroscopy ellipsometry, atomic force microscopy and X-ray photoelectron spectroscopy techniques. The optical constants (n and k) for these films, in the 200-800nm range, are reported as a function of the dipping time. The fitting of ellipsometric data, I{sub s} and I{sub c}, for the glass substrate and the cobalt oxide thin film, as modeled with the Lorentz and Tauc-Lorentz dispersion relations, indicated that the film microstructure resembles a multilayer stack with voids. From these results, the Co{sub 3}O{sub 4} and void percentages in the film were estimated. Both, thin film thickness and void/Co{sub 3}O{sub 4} percentage ratio, were determined to be strongly dependent on the immersion time. Furthermore, the total thickness of a multilayered film was found to be the sum of thickness of each individual layer. (author)

  18. Ultrasonic Spray Pyrolysis Deposited Copper Sulphide Thin Films for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Y. E. Firat

    2017-01-01

    Full Text Available Polycrystalline copper sulphide (CuxS thin films were grown by ultrasonic spray pyrolysis method using aqueous solutions of copper chloride and thiourea without any complexing agent at various substrate temperatures of 240, 280, and 320°C. The films were characterized for their structural, optical, and electrical properties by X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive analysis of X-rays (EDAX, atomic force microscopy (AFM, contact angle (CA, optical absorption, and current-voltage (I-V measurements. The XRD analysis showed that the films had single or mixed phase polycrystalline nature with a hexagonal covellite and cubic digenite structure. The crystalline phase of the films changed depending on the substrate temperature. The optical band gaps (Eg of thin films were 2.07 eV (CuS, 2.50 eV (Cu1.765S, and 2.28 eV (Cu1.765S–Cu2S. AFM results indicated that the films had spherical nanosized particles well adhered to the substrate. Contact angle measurements showed that the thin films had hydrophobic nature. Hall effect measurements of all the deposited CuxS thin films demonstrated them to be of p-type conductivity, and the current-voltage (I-V dark curves exhibited linear variation.

  19. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  20. Biodegradable Polylactide-co-glycolide (PLGA) Thin Films Prepared by Electrospray and Pressurized Spray Deposition

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    PLGA thin films were prepared onto irnplantable devices by the electrospray and pressurized spray method. Thin films with structural gradients were obtained by controlling four parameters consisting of solution concentration, applied voltage, air pressure, and deposition time. The surface morphologies of the deposited films were observed using scanning electron microscopy (SEM). The image analysis revealed the control factors on the preparation of PLGA thin films. The beaded structure is easily formed with a decrease in polymer concentration while the fibrous structure is easily formed with an increase in polymer concentration. With the increase in applied voltage, the surface morphologies changed continuously from a small amount of fibrous shape to a large fibrous one: a small amount of fibrous shape at 10 kV, more fibers with non-uniform diameter at 20 kV, and most fibers with uniform diameter at 30 kV. Low air pressure (0.1 MPa ) corresponded to round particles while high air pressure (0.3 MPa) corresponded to flat particles. The change in thickness from 5.34 to 10.1 μm was a result of deposition time increasing from 5 to 10 s . From our above work, films of the bead or fiber structures can be obtained by changing electrical parameters to improve the biocompatibility of the film.

  1. Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures

    Directory of Open Access Journals (Sweden)

    Beirong Zheng

    2013-01-01

    Full Text Available Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN is deposited by the low pressure chemical vapor deposition (LPCVD process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture.

  2. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    Science.gov (United States)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  3. Study on the effect of film formation process and deposition rate on the orientation of the CsI:Tl thin film

    Science.gov (United States)

    Tan, Xiaochuan; Liu, Shuang; Xie, Yijun; Guo, Lina; Ma, Shijun; Wang, Tianyu; Liu, Yong; Zhong, Zhiyong

    2017-10-01

    Although many new scintillation materials are developed, CsI:Tl is still prevailing because of its high scintillation efficiency. In this work, CsI:Tl thin films were fabricated by vacuum thermal evaporative deposition method and their morphology properties and growth orientation were observed by SEM and XRD. Photoluminescent spectra were used to measure the luminescent properties of the CsI:Tl thin film. The results show us the film formation process of CsI:Tl thin film and analyze the effect of film formation process and the deposition rate on the orientation of the CsI:Tl thin film.

  4. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Reguig, B.A.; Khelil, A. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Benchouk, K. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)], E-mail: Jean-Christian.Bernede@univ-nantes.fr

    2008-07-15

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl{sub 2}.6H{sub 2}O), nickel nitrate hexahydrate (Ni(NO{sub 3}){sub 2}.6H{sub 2}O), nickel hydroxide hexahydrate (Ni(OH){sub 2}.6H{sub 2}O), nickel sulfate tetrahydrate (NiSO{sub 4}.4H{sub 2}O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 deg. C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl{sub 2} and Ni(NO{sub 3}){sub 2} precursors. These films have been post-annealed at 425 deg. C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10{sup -2} Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  5. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

    Energy Technology Data Exchange (ETDEWEB)

    Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Isobe, Shigehito [Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Orimo, Shin-ichi [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2015-09-01

    We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

  6. Electrochemical impedance analysis of spray deposited CZTS thin film: Effect of Se introduction

    Science.gov (United States)

    Patil, Swati J.; Lokhande, Vaibhav C.; Lee, Dong-Weon; Lokhande, Chandrakant D.

    2016-08-01

    The present work deals with electrochemical impedance analysis of spray deposited Cu2ZnSnS4 (CZTS) thin films grown on fluorine doped tin oxide (FTO) substrates and effect of post Se introduction. The CZTS thin films are characterized using X-ray diffraction (XRD), X-Ray photo spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and UV-Vis spectroscopy techniques. The electrochemical measurements are carried out using impedance analysis spectroscopy. The strong peak in XRD pattern along (112) plane confirms the Kestrite crystal structure of CZTS film. The FE-SEM analysis reveals that nanoflakes contain crack-free surface microstructure changes with post Se introucation. The optical study reveals that absorption increases with Se dipping time and observed lower band gap of 1.31 eV. Introduction of Se in CZTS film results an improvement in the grain size and surface morphology which leads to increased electrical conductivity of CZTS film.

  7. Non-vacuum deposition methods for thin film solar cell: Review

    Science.gov (United States)

    Yang, Ruisheng; Mazalan, Elham; Chaudhary, Kashif Tufail; Haider, Zuhaib; Ali, Jalil

    2017-03-01

    Solar power is a promising abundant, pollution free, inexhaustible and clean source of energy. Development of cost-effective solar system with high conversion efficiency is the key challenge in field of solar panel manufacturing industry. Different non-vacuum deposition methods have been developed to reduce the cost of solar panel system along with high conversion efficiency. In this paper, a review is presented with major focus on three non-vacuum deposition methods, as spin coating, dip coating and spray coating. Each mentioned deposition technique is discussed in details along with role of different deposition parameters on the characteristics of grown solar thin films.

  8. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    Science.gov (United States)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K. K.; Srivastava, Ritu; Singh, P. K.

    2015-12-01

    Hafnium oxide (HfO2) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (Dit) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  9. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    Science.gov (United States)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  10. Random lasing of ZnO thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cachoncinlle, C., E-mail: christophe.cachoncinlle@univ-orleans.fr [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France); Hebert, C.; Perrière, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 PO Box. MG-36, 77125 Bucharest—Magurele (Romania); Petit, A.; Millon, E. [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France)

    2015-05-01

    Highlights: • Random lasing at RT in nanocrystalline ZnO PLD thin film (<100 nm). • Low optical pumping threshold (<30 kW cm{sup −2}) for UV random lasing. • Random lasing interpreted by the electron-hole plasma (EHP) model. - Abstract: Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10{sup −2} oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm{sup −2}, a value lower than those classically reported for pulsed-laser deposition thin films.

  11. Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2015-09-01

    This paper presents the physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing. The thin films of thickness 500 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing at temperature 450 °C. These films were subjected to the X-ray diffraction (XRD),UV-Vis spectrophotometer, source meter and atomic force microscopy (AFM) for structural, optical, electrical and surface morphological analysis respectively. The X-ray diffraction patterns reveal that the films have zinc-blende structure of single cubic phase with preferred orientation (111) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in brief. The optical band gap is found to be 1.62 eV and 1.52 eV for as-grown and annealed films respectively. The I-V characteristics show that the conductivity is decreased for annealed thin films. The AFM studies reveal that the surface roughness is observed to be increased for thermally annealed films.

  12. Synthesis of CuInS2 thin films by spray pyrolysis deposition system

    Science.gov (United States)

    Hussain, K. M. A.; Podder, J.; Saha, D. K.

    2013-02-01

    Copper indium disulfide (CuInS2) thin films were deposited on the glass substrate by the locally made spray pyrolysis deposition system. The films were characterized by using energy dispersive analytical X-ray (EDAX) spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-VIS-NIR spectrophotometry. The XRD pattern indicated that the prepared CuInS2 thin films are chalcopyrite structure. Lattice parameters and FWHM values were verified by the standard values of JCPDS 270159 file. The EDAX analysis indicated the stoichiometric ratio of 1.14:1:1.88 (CIS-2) thin films. The SEM analysis showed that the average grain size of the film was 100-800 nm and that of XRD data indicate the values of 30-50 nm. The high absorption co-efficient and 1.48 eV band gap of the films indicate that the films are useful as an absorber for photovoltaic application in the solar cell.

  13. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Houweling, Z. Silvester, E-mail: Z.S.Houweling@uu.nl [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Geus, John W. [Electron Microscopy, Utrecht University, Padualaan 8, 3584 CH Utrecht (Netherlands); Jong, Michiel de; Harks, Peter-Paul R.M.L.; Werf, Karine H.M. van der; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Process parameters to control hot-wire CVD of WO{sub 3-x} are categorized. Black-Right-Pointing-Pointer Growth time, oxygen partial pressure, filament and substrate temperature are varied. Black-Right-Pointing-Pointer Chemical and crystal structure, optical bandgap and morphology are determined. Black-Right-Pointing-Pointer Oxygen partial pressure determines the deposition rate up to as high as 36 {mu}m min{sup -1}. Black-Right-Pointing-Pointer Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO{sub 3-x}) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 Multiplication-Sign 10{sup -6} to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390-2340 Degree-Sign C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min{sup -1} in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO{sub 3-x} with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 {+-} 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO{sub 3} with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone

  14. Growth of nanocrystalline silicon carbide thin films by plasma enhanced chemical vapor deposition

    CERN Document Server

    Lee, S W; Moon, J Y; Ahn, S S; Kim, H Y; Shin, D H

    1999-01-01

    Nanocrystalline silicon carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH sub 4 , CH sub 4 , and H sub 2 gases. The effects of gas mixing ratio (CH sub 4 /SiH sub 4), deposition temperature, and RF power on the film properties have been studied. The growth rate, refractive index, and the optical energy gap depends critically on the growth conditions. The dependence of the growth rate on the gas flow ratio is quite different from the results obtained for the growth using C sub 2 H sub 2 gas instead of CH sub 4. As the deposition temperature is increased from 300 .deg. C to 600 .deg. C, hydrogen and carbon content in the film decreases and as a result the optical gap decreases. At the deposition temperature of 600 .deg. C and RF power of 150 W, the film structure si nanocrystalline, As the result of the nanocrystallization the dark conductivity is greatly improved. The nanocrystalline silicon carbide thin films may be used for large area optoelectronic devices...

  15. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  16. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-06-12

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions.

  17. Thin alumina and silica films by chemical vapor deposition (CVD)

    OpenAIRE

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ceramic coatings. The influence of several process steps on the deposition rate and surface morphology is discussed. The deposition of SiO2 at atmospheric pressure is kinetically limited below 833 K ...

  18. Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

    Science.gov (United States)

    Lupan, O. I.; Shishiyanu, S. T.; Shishiyanu, T. S.

    2007-07-01

    Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO 2, NH 3. While the undoped ZnO film surface exhibited higher NH 3 sensitivity than that of NO 2, an enhanced NO 2 sensitivity was noticed for the ZnO films doped with Sn and higher NH 3 sensitivity was obtained by Ni doping.

  19. Synthesis and Characterization of SnO2 Thin Films by Chemical Bath Deposition

    Science.gov (United States)

    Rifai, Aditia; Iqbal, Muhammad; Nugraha; Nuruddin, Ahmad; Suyatman; Yuliarto, Brian

    2011-12-01

    SnO2 thin films were deposited on glass substrate by chemical bath deposition (CBD) with stannous chloride (SnCl2..2H2O) as a precursor and urea (CO(NH2)2) as a buffer. X-Ray Diffraction (XRD) are used to characterize the structure of the films; the surface morphology of the films were observed by Scanning Electron Microscope (SEM). Using this techniques, we specify the effect of stannous chloride concentration and weight ratio of urea/H2O on the crystallinity and morphology of these films. The rutile structure corresponding (110), (101) and (211) planes of SnO2 is obtained. The increasing of stannous chloride concentration and the decreasing weight ratio of urea/H2O is found to improve the crystallinity of the film. The average diameter of grain size is about 96 nm.

  20. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  1. Pulsed-laser-deposited YBCO thin films using modified MTG processed targets

    CERN Document Server

    Kim, C H; Kim, I T; Hahn, T S

    1999-01-01

    YBCO thin films were deposited by pulsed laser deposition from targets fabricated using the modified melt-textured growth (MTG) method and the solid-state sintering (SSS) method. All of the films showed c-axis orientations, but the films from the MTG targets had better crystallinity than those from the SSS targets. As the substrate temperature was increased, T sub c and J sub c of the films increased. The films from the MTG targets showed better superconducting properties than those from the SSS targets. From the composition analysis of the targets, the Y-richer vapor species arriving at the substrate from the MTG targets are thought to form a thermodynamically more stable YBCO phase with less cation disorder.

  2. Separation of Hydrogen Using an Electroless Deposited Thin-Film Palladium-Ceramic Composite Membrane

    Energy Technology Data Exchange (ETDEWEB)

    Ilias, S.; King, F.G.; Fan, Ting-Fang; Roy, S. [North Carolina Agricultural and Technical State Univ., Greensboro, NC (United States). Dept. of Chemical Engineering

    1996-12-31

    The primary objective of this project was to prepare and characterize a hydrogen permselective palladium-ceramic composite membrane for high temperature gas separations and catalytic membrane reactors. Electroless plating method was used to deposit a thin palladium film on microporous ceramic substrate. The objective of this paper is to discuss the preparation and characterization of a thin-film palladium-ceramic composite membrane for selective separation of hydrogen at elevated temperatures and pressures. In this paper, we also present a model to describe the hydrogen transport through the palladium-ceramic composite membrane in a cocurrent flow configuration.

  3. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  4. Metal-Organic Framework Thin Films as Platforms for Atomic Layer Deposition of Cobalt Ions To Enable Electrocatalytic Water Oxidation.

    Science.gov (United States)

    Kung, Chung-Wei; Mondloch, Joseph E; Wang, Timothy C; Bury, Wojciech; Hoffeditz, William; Klahr, Benjamin M; Klet, Rachel C; Pellin, Michael J; Farha, Omar K; Hupp, Joseph T

    2015-12-30

    Thin films of the metal-organic framework (MOF) NU-1000 were grown on conducting glass substrates. The films uniformly cover the conducting glass substrates and are composed of free-standing sub-micrometer rods. Subsequently, atomic layer deposition (ALD) was utilized to deposit Co(2+) ions throughout the entire MOF film via self-limiting surface-mediated reaction chemistry. The Co ions bind at aqua and hydroxo sites lining the channels of NU-1000, resulting in three-dimensional arrays of separated Co ions in the MOF thin film. The Co-modified MOF thin films demonstrate promising electrocatalytic activity for water oxidation.

  5. Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

    Indian Academy of Sciences (India)

    H M Pathan; C D Lokhande

    2004-04-01

    During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

  6. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  7. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  8. Effect of sputter deposited YSZ thin films on the fracture behavior of dental bioceramics

    Science.gov (United States)

    Teixeira, Erica Cappelletto Nogueira

    The fracture behavior of dental bioceramic materials was evaluated under physiologic conditions when modified by yttria stabilized zirconia (YSZ) thin film deposition. It was hypothesized that changing the YSZ thin film properties will produce a significant enhancement in the strength of bioceramic materials, ultimately promoting a more fatigue resistant construct. Porcelain, alumina, and zirconia were evaluated in terms of dynamic fatigue for an initial characterization of their fracture behavior. Data showed that strength degradation occurred in all three materials, most drastically in porcelain. Initial strength measurements, focused on depositing YSZ thin films on three unique substrates; porcelain, alumina, and zirconia, were carried out. A significant increase in strength was observed for alumina and porcelain. Since strength alone is not enough to characterize the fracture behavior of brittle materials, coated specimens of porcelain and zirconia were subjected to dynamic fatigue and Weibull analysis. Coated YSZ porcelain specimens showed a significant increase in strength at all tested stressing rates. YSZ coated zirconia specimens showed similar strength values at all stressing rates. The effect of film thickness on porcelain was also evaluated. Data demonstrated that film thickness alone does not appear to control increases in the flexural strength of a modified substrate. It is expected that deposition induced stress in YSZ sputtered films does not change with film thickness. However, a thicker film will generate a larger force at the film/substrate interface, contributing to delamination of the film. It was clear that in order to have a significant improvement in the fracture behavior of porcelain, changing the thickness of the film is not enough. The columnar structure of the YSZ films developed seems to favor an easy path for crack propagation limiting the benefits expected by the coating. The effect of a multilayered film, composed by brittle

  9. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  10. Effect of deuterium ion beam irradiation onto the mirror-like pulsed laser deposited thin films of rhodium

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A.T.T., E-mail: abu@iitg.ernet.in [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Khare, Alika [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Rao, C.V.S.; Vala, Sudhirsinh; Makwana, R.J.; Basu, T.K. [Neutronics Lab, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2015-01-01

    Highlights: • Rh mirror like thin films are fabricated by PLD technique for FM application. • Rh thin film FMs are irradiated with 10, 20, and 30 keV D ion beam. • Effect of D ion beam irradiation on Rh FM’s reflectivity is investigated. - Abstract: The effect of deuterium ion beam irradiation on the reflectivity of mirror-like pulsed laser deposited (PLD) thin film of rhodium is reported. The deposition parameters; target-substrate distance and background helium gas pressure were optimized to obtain the good quality rhodium films, of higher thickness, oriented preferentially in (1 1 1) plane. The rhodium thin films deposited at optimum PLD parameters were exposed to 10, 20, and 30 keV deuterium ion beam. The changes in surface morphology and UV–Visible–FIR reflectivity of mirror-like rhodium thin films, as a function of energy of deuterium ion beam, after exposure are reported.

  11. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction Process

    Energy Technology Data Exchange (ETDEWEB)

    Han, Seungyeol; Lee, D. H.; Ryu, S. O.; Chang, Chih-hung

    2010-05-20

    In this article, we reported a spin successive ionic layer adsorption and reaction (SILAR) method for the first time. ZnS thin films were deposited by spin SILAR using ZnCl2 and Na2S aqueous precursor solutions at room temperature and atmosphere pressure. The optical, structural, and morphological characterizations of the films were studied by scanning electron microscopy, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and UV/visible spectroscopy. Smooth (average roughness <3 nm), uniform, and highly transparent ZnS (transmittance of over 90% in the visible band) thin films could be successfully deposited using this technique with shorter cycle time and much less solvent usage.

  12. Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

    Indian Academy of Sciences (India)

    Anil G Khairnar; Ashok M Mahajan

    2013-04-01

    In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating technique and further characterized to study the various properties. Chemical composition of deposited films has been analysed by FTIR which shows existence of CeO2. The samples have been optically characterized using ellipsometry to find refractive index of 2.18 and physical thickness which is measured to be 5.56 nm. MOS capacitors were fabricated by depositing aluminum (Al) metal using the thermal evaporation technique on the top of CeO2 thin films. Capacitance–voltage measurement was carried out to calculate the dielectric constant, flat-band voltage shift of 18.92, 0.3–0.5V, respectively and conductance–voltage study was carried out to determine the Dit of 1.40 × 1013 eV-1 cm-2 at 1MHz.

  13. On the wetting behavior of ceria thin films grown by pulsed laser deposition

    Science.gov (United States)

    Fu, Sin-Pui; Rossero, Jorge; Chen, Chen; Li, Daniel; Takoudis, Christos G.; Abiade, Jeremiah T.

    2017-02-01

    Polymers are most widely used in the production of water-repellant coatings. However, their use in applications requiring wear resistance or high-temperature stability is extremely limited. A recent report suggests that wear resistant, thermally stable rare earth oxide materials like cerium dioxide (ceria) are intrinsically water repellant. We have studied this intriguing finding for ceria thin films fabricated by pulsed laser deposition (PLD) at different oxygen pressures and different substrate temperatures. We used a custom apparatus for measuring water contact angles on ceria films deposited by PLD. X-ray photoelectron spectroscopy was used to determine the relationship between the ceria wetting behavior and ceria surface chemistry. Our results show that ceria thin films are intrinsically hydrophilic and that hydrophobicity arises due to adsorption of hydrocarbon species after ˜24 h.

  14. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    Science.gov (United States)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  15. Synthesis and Characterization of In2S3 Thin Films Deposited by Chemical Bath Deposition on Polyethylene Naphthalate Substrates

    Science.gov (United States)

    Castelo-González, O. A.; Santacruz-Ortega, H. C.; Quevedo-López, M. A.; Sotelo-Lerma, M.

    2012-04-01

    Indium sulfide (In2S3) thin films were deposited on polyethylene naphthalate (PEN) by chemical bath deposition (CBD). The materials were characterized by ultraviolet (UV)-visible spectroscopy, x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), and x-ray diffraction (XRD) to investigate the influence of the polymeric substrate on the resulting thin In2S3. The films showed polycrystalline (cubic and tetragonal) structure. A reduction of the ordering of the polymeric chains at the surface of the PEN was also observed, demonstrated by the appearance of two infrared bands at 1094 cm-1 and 1266 cm-1. Presence of oxygen during the early stages of In2S3 growth was also identified. We propose a reaction mechanism for both the equilibrium and nucleation stages. These results demonstrate that In2S3 can be deposited at room temperature on a flexible substrate.

  16. Atomic layer deposition of Al-doped ZnO thin films

    OpenAIRE

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-01

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2O3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up...

  17. Thulium and ytterbium-doped titanium oxide thin films deposited by ultrasonic spray pyrolysis

    OpenAIRE

    Forissier, S.; Roussel, H.; Chaudouet, P.; Pereira, A.; Deschanvres, J.-L.; B. Moine

    2012-01-01

    Thin films of thulium and ytterbium-doped titanium oxide were grown by metal-organic spray pyrolysis deposition from titanium(IV)oxide bis(acetylacetonate), thulium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) and ytterbium(III) tris(acetylacetonate). Deposition temperatures have been investigated from 300{\\deg}C to 600{\\deg}C. Films have been studied regarding their crystallity and doping quality. Structural and composition characterisations of TiO2:Tm,Yb were performed by electron micr...

  18. Preparation of Nano-Particles (Pb,La)TiO3 Thin Films by Liquid Source Misted Chemical Deposition

    Institute of Scientific and Technical Information of China (English)

    张之圣; 曾建平; 李小图

    2004-01-01

    Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.

  19. High-rate deposition of nano-crystalline silicon thin films on plastics

    Energy Technology Data Exchange (ETDEWEB)

    Marins, E.; Guduru, V.; Cerqueira, F.; Alpuim, P. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes, 4710-057 Braga (Portugal); Ribeiro, M. [Centro de Nanotecnologia e Materiais Tecnicos, Funcionais e Inteligentes (CeNTI), 4760-034 Vila Nova de Famalicao (Portugal); Bouattour, A. [Institut fuer Physikalische Elektronik (ipe), Universitaet Stuttgart, 70569 Stuttgart (Germany)

    2011-03-15

    Nanocrystalline silicon (nc-Si:H) is commonly used in the bottom cell of tandem solar cells. With an indirect bandgap, nc-Si:H requires thicker ({proportional_to}1 {mu}m) films for efficient light harvesting than amorphous Si (a-Si:H) does. Therefore, thin-film high deposition rates are crucial for further cost reduction of highly efficient a-Si:H based photovoltaic technology. Plastic substrates allow for further cost reduction by enabling roll-to-roll inline deposition. In this work, high nc-Si:H deposition rates on plastic were achieved at low substrate temperature (150 C) by standard Radio-frequency (13.56 MHz) Plasma Enhanced Chemical Vapor Deposition. Focus was on the influence of deposition pressure, inter-electrode distance (1.2 cm) and high power coupled to the plasma, on the hydrogen-to-silane dilution ratios (HD) necessary to achieve the amorphous-to-nanocrystalline phase transition and on the resulting film deposition rate. For each pressure and rf-power, there is a value of HD for which the films start to exhibit a certain amount of crystalline fraction. For constant rf-power, this value increases with pressure. Within the parameter range studied the deposition rate was highest (0.38 nm/s) for nc-Si:H films deposited at 6 Torr, 700 mW/cm{sup 2} using HD of 98.5%. Decreasing the pressure to 3 Torr (1.5 Torr) and rf-power to 350 mW/cm{sup 2} using HD - 98.5% deposition rate is 0.12 nm/s (0.076 nm/s). Raman crystalline fraction of these films is 72, 62 and 53% for the 6, 3 and 1.5 Torr films, respectively (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Characterization of hydrogenated and deuterated thin carbon films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D., E-mail: pantel@nipne.ro [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, 30 Reactorului St., RO 077125 Magurele (Romania); Ionescu, P.; Petrascu, H. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, 30 Reactorului St., RO 077125 Magurele (Romania); Nita, C.R. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, 30 Reactorului St., RO 077125 Magurele (Romania); University Politehnica of Bucharest, RO 060042 Bucharest (Romania); Matei, E.; Rasoga, O. [National Institute for Materials Physics, 105 Atomistilor Str., RO 077125 Magurele-Bucharest (Romania); Acsente, T.; Dinescu, G. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO 077125 Magurele-Bucharest (Romania)

    2014-07-15

    Thin films of C layers were deposited by radiofrequency magnetron sputtering on silicon substrates using three gaseous atmospheres: pure Ar, Ar + H{sub 2} and Ar + D{sub 2} mixtures. Scanning Electron Microscopy investigations showed that addition of D{sub 2} or H{sub 2} to main sputtering gas (Ar) leads to the enhancement of the deposition rate while the layer morphology remained columnar. Fourier Transform Infrared Spectroscopy measurements revealed the presence of D–C or H–C chemical bonds in the samples. Ion beam analysis measurements performed by simultaneous recording of the recoiled H and D ions, and of backscattered {sup 4}He confirmed the incorporation of hydrogen and deuterium in the deposited carbon thin films.

  1. Aqueous metal–organic solutions for YSZ thin film inkjet deposition

    DEFF Research Database (Denmark)

    Gadea, Christophe; Hanniet, Q.; Lesch, A.

    2017-01-01

    Inkjet printing of 8% Y2O3-stabilized ZrO2 (YSZ) thin films is achieved by designing a novel water-based reactive ink for Drop-on-Demand (DoD) inkjet printing. The ink formulation is based on a novel chemical strategy that consists of a combination of metal oxide precursors (zirconium alkoxide...... and yttrium salt), water and a nucleophilic agent, i.e. n-methyldiethanolamine (MDEA). This chemistry leads to metal–organic complexes with long term ink stability and high precision printability. Ink rheology and chemical reactivity are analyzed and controlled in terms of metal–organic interactions...... in the solutions. Thin dense nanocrystalline YSZ films below 150 nm are obtained by low temperature calcination treatments (400–500 °C), making the deposition suitable for a large variety of substrates, including silicon, glass and metals. Thin films and printed patterns achieve full densification with no lateral...

  2. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  3. Pulsed laser deposited LaInO{sub 3} thin films and their photoluminescence characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Chaluvadi, Sandeep Kumar [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Centre for Nanotechnology Research, SENSE, VIT University, Vellore, Tamil Nadu 632014 (India); Aswin, V.; Kumar, Pramod; Singh, Pooja; Haranath, D.; Rout, P.K. [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Dogra, Anjana, E-mail: anjanad@nplindia.org [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2015-10-15

    Photoluminescence studies of pulsed laser deposition grown LaInO{sub 3} thin films on TiO{sub 2} terminated SrTiO{sub 3} substrate showed a broad-band blue emission peaking at 412 nm, which is primarily attributed to the charge transfer transitions between oxygen and indium, inter (d–f) and intra (f–f) band transitions. The results are analysed based on the mechanism of absorption and emission within the d{sup 10} levels of In{sup 3+} ions. Broadening of the photoluminescence emission is observed with reduction in size of the crystallite owing to quantum confinement effects. - Highlights: • First time grown thin films of LaInO{sub 3} by PLD. • Interesting new photoluminescence features in thin films of LaInO{sub 3}. • Results are discussed on the basis of quantum confinement.

  4. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

    Science.gov (United States)

    Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-07

    We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

  5. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    Science.gov (United States)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2017-01-01

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi3Fe5O12, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches -5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods.

  6. Low-field microwave absorption in pulse laser deposited FeSi thin film

    Energy Technology Data Exchange (ETDEWEB)

    Gavi, H. [Department of Physics, SARCHI Chair in Carbon Technology and Materials, Institute of Applied Materials, University of Pretoria, Pretoria 0028 (South Africa); Ngom, B.D. [Groupe d Laboratoires de Physique des Solid et des Materiaux, Faculte deSciences et Techniques, Universite Cheikh Anta de Dakar, BP 25114 Dakar-Fann, Daka 16996 (Senegal); Institut National de la Recherche Scientifique Centre-Energie Materiaux, Telecommunications 1650, Boulevard Lionel Boulet Varennes (Quebec), Canada J3X 1S2 (Canada); Beye, A.C. [Groupe d Laboratoires de Physique des Solid et des Materiaux, Faculte deSciences et Techniques, Universite Cheikh Anta de Dakar, BP 25114 Dakar-Fann, Daka 16996 (Senegal); Strydom, A.M. [Department of Physics, University of Johannesburg, Johannesburg 2006 (South Africa); Srinivasu, V.V., E-mail: vallavs@unisa.ac.za [Department of Physics, University of South Africa, Pretoria 0003 (South Africa); Chaker, M. [Institut National de la Recherche Scientifique Centre-Energie Materiaux, Telecommunications 1650, Boulevard Lionel Boulet Varennes (Quebec), Canada J3X 1S2 (Canada); Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, SARCHI Chair in Carbon Technology and Materials, Institute of Applied Materials, University of Pretoria, Pretoria 0028 (South Africa)

    2012-03-15

    Low field microwave absorption (LFMA) measurements at 9.4 GHz (X-band), were carried out on pulse laser deposited (PLD) polycrystalline B20 cubic structure FeSi thin film grown on Si (111) substrate. The LFMA properties of the films were investigated as a function of DC field, temperature, microwave power and the orientation of DC field with respect to the film surface. The LFMA signal is very strong when the DC field is parallel to the film surface and vanishes at higher angles. The LFMA signal strength increases as the microwave power is increased. The LFMA signal disappears around 340 K, which can be attributed to the disappearance of ferromagnetic state well above room temperature in these films. We believe that domain structure evolution in low fields, which in turn modifies the low field permeability as well as the anisotropy, could be the origin of the LFMA observed in these films. The observation of LFMA opens the possibility of the FeSi films to be used as low magnetic field sensors in the microwave and rf frequency regions. - Highlights: Black-Right-Pointing-Pointer B20 crystalline FeSi thin film shows low field microwave absorption. Black-Right-Pointing-Pointer Usual ferromagnic resonance typical of magnetic materials is observed in FeSi film. Black-Right-Pointing-Pointer FeSi film can be used for low magnetic field sensors.

  7. Ti-Nb thin films deposited by magnetron sputtering on stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, E. David; Niemeyer, Terlize C.; Afonso, Conrado R. M.; Nascente, Pedro A. P., E-mail: nascente@ufscar.br [Department of Materials Engineering, Federal University of Sao Carlos, CEP 13565-905 Sao Carlos, São Paulo (Brazil)

    2016-03-15

    Thin films of Ti-Nb alloys were deposited on AISI 316L stainless steel substrate by magnetron sputtering, and the structure, composition, morphology, and microstructure of the films were analyzed by means of x-ray diffraction (XRD), (scanning) transmission electron microscopy (TEM) coupled with energy-dispersive x-ray spectroscopy, atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS). Thin films of four compositions were produced: Ti{sub 85}Nb{sub 15} (Ti-26 wt. % Nb), Ti{sub 80}Nb{sub 20} (Ti-33 wt. % Nb), Ti{sub 70}Nb{sub 30} (Ti-45 wt. % Nb), and Ti{sub 60}Nb{sub 40} (Ti-56 wt. % Nb). Structural characterization by XRD indicated that only the β phase was present in the thin films and that the increase in the Nb content modified the alloy film texture. These changes in the film texture, also detected by TEM analysis, were attributed to different growth modes related to the Nb content in the alloy films. The mean grain sizes measured by AFM increased with the Nb amount (from 197 to 222 nm). XPS analysis showed a predominance of oxidized Ti and Nb on the film surfaces and an enrichment of Ti.

  8. Nanostructure and magnetic properties of magnesium ferrite thin films deposited on glass substrate by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Arabi, H., E-mail: arabi-h@um.ac.ir [Magnetism and Superconducting Research Laboratory, Department of Physics, Faculty of Science, University of Birjand, Birjand (Iran, Islamic Republic of); Department of Physics, Faculty of Science, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Khalili Moghadam, N. [Magnetism and Superconducting Research Laboratory, Department of Physics, Faculty of Science, University of Birjand, Birjand (Iran, Islamic Republic of)

    2013-06-15

    The spinel MgFe{sub 2}O{sub 4} thin films were prepared on the glass substrates at T{sub S}=400 °C by the spray pyrolysis deposition method. Structural and magnetic properties of the calcinated thin films at different temperatures were also investigated. By changing the calcination temperature from 400 to 600 °C, the crystallite size increased from 10 to 15 nm and the crystallinity of the films improved slightly. Thickness of the films calcinated at 400 and 600 °C were 0.648 and 1.473 μm respectively. However, the surface morphology of the films did not change considerably. Magnetic measurements, when the applied magnetic field was in parallel and perpendicular directions, showed the isotropic magnetic nature of the prepared films and their magnetic properties increased with the increment of calcination temperature. The H{sub c} value of thin films calcinated at 400 °C was about 168 Oe. - Highlights: ► Thin films of MgFe{sub 2}O{sub 4} are prepared via spray pyrolysis. ► All of the MgFe{sub 2}O{sub 4} films have nanostructure and the special magnetic properties. ► The surface morphology of films in different calcination temperatures is similar. ► The H{sub c} values of our films are independent of the applied field direction. ► The M{sub s} values in the plan and perpendicular directions are not the same.

  9. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Stranak, V., E-mail: stranak@physik.uni-greifswald.de [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Wulff, H. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Rebl, H. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Zietz, C. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Arndt, K. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Bogdanowicz, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Nebe, B. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Bader, R. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Podbielski, A. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Hubicka, Z. [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 180 00 Prague (Czech Republic); Hippler, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany)

    2011-10-10

    The antibacterial effect of thin titanium-copper (Ti-Cu) films combined with sufficient growth of human osteoblastic cells is reported in the paper. Thin Ti-Cu films were prepared by three different plasma-assisted magnetron sputtering methods: direct current magnetron sputtering (dc-MS), dual magnetron sputtering (dual-MS) as well as dual high power impulse magnetron sputtering (dual-HiPIMS). The antimicrobial effect is caused by copper released from the metallic Ti-Cu films, which was measured by atomic absorption spectroscopy (AAS). The copper release is influenced by the chemical and physical properties of the deposited films and was investigated by X-ray diffractometry and X-ray reflectometry (GIXD and XR) techniques. It was found that, within the first 24 h the amount of Cu released from dual-HiPIMS films (about 250 {mu}g) was much higher than from dc-MS and dual-MS films. In vitro planktonic growth tests on Ti-Cu surfaces for Staphylococcus epidermidis and S. aureus demonstrated the killing of both bacteria using the Ti-Cu films prepared using the dual-HiPIMS technique. The killing effects on biofilm bacteria were less obvious. After the total release of copper from the Ti-Cu film the vitality of exposed human osteoblast MG-63 cells increased significantly. An initial cytotoxic effect followed by the growth of osteoblastic cells was demonstrated. The cytotoxic effect combined with growth of osteoblastic cells could be used in joint replacement surgery to reduce the possibility of infection and to increase adoption of the implants. Highlights: {yields} Ti-Cu films with significant cytotoxic effect were prepared by dual-HiPIMS technique. {yields} The cytotoxic effect is caused by total release of copper species from thin films. {yields} The copper release is influenced by crystallography and chemical properties of thin films. {yields} Sufficient growth of osteoblastic cells follows after copper release.

  10. Growth of ZnO thin films on GaAs by pulsed laser deposition

    OpenAIRE

    Craciun, V.; Elders, J.; Gardeniers, J.G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 ° have been grown on such buffer layers at a substrate temperature of only 350 °C.

  11. Chemical surface deposition of cds thin films from CdI2 aqueous solution

    Directory of Open Access Journals (Sweden)

    G. Il’chuk

    2009-01-01

    Full Text Available For the first time using CdI2 solution CdS films on glass and ITO coated glass substrates were produced by the method of layerwise chemical surface deposition (ChSD. CdS thin films with the widths from 40 nm to 100 nm were obtained for windows in solar cells based on CdS/CdTe heterojunctions. Changes of the structural and optical properties of CdS films due to air annealing are shown.

  12. Magnetic property and recording performance of chemical deposition CoP thin films

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    The thickness of CoP thin films prepared by wet chemical deposition is of crucial importance on magnetic property and recording perform-ance. The coercivity of CoP films decreased with increasing film thickness. The coercivity was 45.37 kA m 1 at the thickness of 300 nm, and decreased to 21.65 kA m 1 at 5.7 μm. Recording performance tests indicate that, for drums with the same size, different recorded magnetic pole density have different thickness requirements. For 40 mm diameter magnetic drum, the optimal ...

  13. Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

    Indian Academy of Sciences (India)

    A U Ubale; V S Sangawar; D K Kulkarni

    2007-04-01

    ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3.68–4.10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6.9–17.8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of -type.

  14. A comparative study of CdS thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2013-05-01

    Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

  15. Thin alumina and silica films by chemical vapor deposition (CVD)

    NARCIS (Netherlands)

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ce

  16. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

    Indian Academy of Sciences (India)

    M S Hegde

    2001-10-01

    Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.

  17. The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Hang Xu

    2014-01-01

    Full Text Available Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2 are about 3.48 eV compared with 3.24 eV without hydrogen. It is also demonstrated that hydrogen can result in a better stoichiometric composition of the films.

  18. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  19. Photocatalytic degradation characteristic of amorphous TiO2-W thin films deposited by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    HUANG Jia-mu; LI Yue-xia; ZHAO Guo-dong; CAI Xiao-ping

    2006-01-01

    TiO2-W films were deposited on the slides by reactive magnetron sputtering. Properties of the films were analyzed via AFM,XRD,XPS,STS,UV-Vis and ellipse polarization apparatus. The results show that TiO2-W films are amorphous. The AFM map reveals that the surface of the film is tough and porous. The experiments of decomposing methylene blue indicate that the thickness threshold on these films is 141 nm,at which the rate of photodegradation is 90% in 2 h. And when the thickness is over 141 nm,the rate of photodegradation does not increase any more. This result is completely different from that of crystalloid TiO2 thin film.

  20. Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition

    Science.gov (United States)

    Schwoediauer, Reinhard; Bauer-Gogonea, Simona; Bauer, Stefan; Heitz, J.; Arenholz, Enno; Baeuerle, Dieter

    1999-12-01

    Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion in thin nonpolar films.

  1. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  2. atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Prolier, T.; Klug, J. A.; Elam, J. W.; Claus, H.; Becker, N. G.; Pellin, M. J. (Materials Science Division)

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  3. Atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Klug, J. A.; Prolier, T.; Elam, J. W.; Becker, N. G.; Pellin, M. J. (Energy Systems); ( HEP); ( MSD); (Illinois Inst. Tech.)

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  4. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr [Faculty of Education, Hakkari Universty, 30000, Hakkari (Turkey); Gumus, Cebrail [Faculty of Science and Letters, Cukurova University, 01330, Adana (Turkey)

    2016-03-25

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  5. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    A I Oliva; J E Corona; R Patiño; A I Oliva-Avilés

    2014-04-01

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.

  6. High-temperature conductivity in chemical bath deposited copper selenide thin films

    Science.gov (United States)

    Dhanam, M.; Manoj, P. K.; Prabhu, Rajeev. R.

    2005-07-01

    This paper reports high-temperature (305-523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu 2-xSe) and copper (II) selenide (Cu 3Se 2) thin films. Cu 2-xSe and Cu 3Se 2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu 2-xSe and Cu 3Se 2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.

  7. Physical properties of ZnO thin films deposited at various substrate temperatures using spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Prasada Rao, T., E-mail: prasadview@gmail.co [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620015 (India); Santhosh Kumar, M.C., E-mail: santhoshmc@yahoo.co [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620015 (India); Safarulla, A. [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620015 (India); Ganesan, V.; Barman, S.R. [UGC-DAE Consortium for Scientific Research, Indore-452001 (India); Sanjeeviraja, C. [School of Physics, Alagappa University, Karaikudi-630003 (India)

    2010-05-01

    Zinc oxide (ZnO) thin films have been deposited with various substrate temperatures by spray pyrolysis technique onto glass substrates. X-ray diffraction (XRD) results showed the random growth orientation of the crystallites and the presence of the wurtzite phase of ZnO. The x-ray photoelectron spectroscopy (XPS) measurements reveal the presence of Zn{sup 2+} and chemisorbed oxygen in ZnO thin films. Atomic force micrograms (AFM) revealed a granular, polycrystalline morphology for the films. The grain size is found to increase as the substrate temperature increases. All films exhibit a transmittance of about 85% in the visible region. The photoluminescence (PL) measurements indicated that the intensity of emission peaks significantly varying with substrate temperature. Electrical resistivity has been found to decrease; while the carrier concentration increases with substrate temperature.

  8. Physical and structural studies of chemical Vapor deposited lacunar neodymium manganite thin films

    Directory of Open Access Journals (Sweden)

    Oumezzine M.

    2012-06-01

    Full Text Available Lacunar Nd1-xMnO3-δ thin films were successfully deposited by a liquid source metal-organic MOCVD technique on (001 SrTiO3 (STO, LaAlO3 (LAO and Si substrates. Optimal growth conditions are reported. TEM and X-ray diffraction characterisations reveal that the thin films grown on STO and LAO substrates are single crystalline layers epitaxially grown on the top of the substrates. The relationship between the crystallographic orientation of the films and those of the substrates were determined. Magnetic transition temperatures (Tc of the as-grown STO films, deduced from Squid Magnetometer measurements, are compared to the corresponding bulk values (typically 100K. Our magnetic measurements also suggest a complicated magnetic behavior close to the one observed in bulk samples: magnetization curves obtained under different applied magnetic fields indicate a possible reverse of the magnetization sign at low temperatures.

  9. Growth of γ-alumina thin films by pulsed laser deposition and plasma diagnostic

    Science.gov (United States)

    Yahiaoui, K.; Abdelli-Messaci, S.; Messaoud Aberkane, S.; Siad, M.; Kellou, A.

    2017-07-01

    The present work discusses about the synthesis of alumina thin films, which have applications in current and next-generation solid-state electronic devices due to their attractive properties. Alumina thin films were synthesized by pulsed laser deposition at different oxygen pressures and substrate temperatures. The dependence of substrate temperature, oxygen pressure, and the deposition time on the properties of the films has been observed by growing three series of alumina thin films on Si (100). The first films are synthesized using substrate temperatures ranging from room temperature to 780 °C at 0.01 mbar of O2. The second series was realized at a fixed substrate temperature of 760 °C and varied oxygen pressure (from 0.005 to 0.05 mbar). The third set of series was elaborated at different deposition times (from 15 to 60 min) while the oxygen pressure and the substrate temperature were fixed at 0.01 mbar and 760 °C, respectively. The films were characterized using X-ray diffractometer (XRD) for structural analysis, a scanning electron microscope for morphological analysis, a nano-indenter for mechanical analysis (hardness and Young's modulus), and Rutherford backscattering spectroscopy for thickness and stoichiometry measurements. Using optical emission spectroscopy, plasma diagnostic was carried out both in the vacuum and in the presence of oxygen with a pressure ranging from 0.01 to 0.05 mbar. Several neutral, ionic, and molecular species were identified such as Al, Al+, and Al++ in vacuum and in oxygen ambiance, O and AlO molecular bands in oxygen-ambient atmosphere. The spatiotemporal evolution of the most relevant species was achieved and their velocities were estimated. The highest amount of crystallized alumina in γ-phase was found in the films elaborated under 0.01 mbar of O2, at a substrate temperature of 780 °C, and a deposition time of 60 min.

  10. Deposition and characterization of silicon thin-films by aluminum-induced crystallization

    Science.gov (United States)

    Ebil, Ozgenc

    Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined

  11. Some aspects over the quality of thin films deposited on special steels used in hydraulic blades

    Science.gov (United States)

    Tugui, C. A.; Vizureanu, P.; Iftimie, N.; Steigmann, R.

    2016-08-01

    The experimental research involved in this paper consists in the obtaining of superior physical, chemical and mechanical properties of stainless steels used in the construction of hydraulic turbine blades. These properties are obtained by deposition of hard thin films in order to improve the wear resistance, increasing the hardness but maintaining the tenacious core of the material. The chosen methods for deposition are electrospark deposition because it has relatively low costs, are easy to obtain, the layers have a good adherence to support and the thickness can be variable in function of the established conditions and the pulsed laser deposition because high quality films can be obtained at nanometric precision. The samples will be prepared for the analysis of the structure using optical method as well as for the obtaining of the optimal roughness for the deposition. The physical, chemical and mechanical properties will be determined after deposition using SEM and EDX, in order to emphasize the structure film-substrate and repartition of the deposition elements on the surface and in transversal section. The non-destructive testing has emphasized the good adherence between deposited layer and the metallic support, due to double deposition, spallation regions doesn't appear.

  12. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Peng-Fei; DING Shi-Jin; ZHANG Wei; ZHANG Jian-Yun; WANGJi-Tao; WEI William Lee

    2000-01-01

    Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.

  13. Mechanical properties and scratch resistance of filtered-arc-deposited titanium oxide thin films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Borrero-Lopez, Oscar, E-mail: oborlop@unex.es [Departamento de Ingenieria Mecanica, Energetica y de los Materiales, Universidad de Extremadura, 06071, Badajoz (Spain); School of Materials Science and Engineering, University of New South Wales NSW 2052, Sydney (Australia); Hoffman, Mark [School of Materials Science and Engineering, University of New South Wales NSW 2052, Sydney (Australia); Bendavid, Avi; Martin, Phil J. [CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield NSW 2070 (Australia)

    2011-09-01

    The mechanical properties and the scratch resistance of titanium oxide (TiO{sub 2}) thin films on a glass substrate have been investigated. Three films, with crystalline (rutile and anatase) and amorphous structures, were deposited by the filtered cathodic vacuum arc deposition technique on glass, and characterized by means of nanoindentation and scratch tests. The different damage modes (arc-like, longitudinal and channel cracks in the crystalline films; Hertzian cracks in the amorphous film) were assessed by means of optical and focused ion beam microscopy. In all cases, the deposition of the TiO{sub 2} film improved the contact-mechanical properties of uncoated glass. Crystalline films were found to possess a better combination of mechanical properties (i.e. elastic modulus up to 221 GPa, hardness up to 21 GPa, and fracture strength up to 3.6 GPa) than the amorphous film. However, under cyclic sliding contact above the critical fracture load, the amorphous film was found to withstand a higher number of cycles. The results are expected to provide useful insight for the design of optical coatings with improved contact-damage resistance.

  14. Influence of strain/stress on the nonlinear-optical properties of sprayed deposited ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahedi, K., E-mail: bahedikhadija@yahoo.fr [Laboratoire Optoelectronique et Physico-chimie des Materiaux.Unite de recherche associe au CNRST-URAC-14. Universite Ibn Tofail, Faculte des Sciences BP 133 Kenitra 14000 (Morocco); Addou, M.; Jouad, M. El; Sofiani, Z. [Laboratoire Optoelectronique et Physico-chimie des Materiaux.Unite de recherche associe au CNRST-URAC-14. Universite Ibn Tofail, Faculte des Sciences BP 133 Kenitra 14000 (Morocco); Oauzzani, H. EL; Sahraoui, B. [Institute of Sciences and Molecular Technologies of Angers, MOLTECH Anjou - UMR CNRS 6200, 2 bd Lavoisier 49045 ANGERS cedex2 (France)

    2011-07-01

    Nanocrystalline ZnO:Al thin films were deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 450 deg. C to study their crystalline structure, composition, strain, stress, roughness characteristics and nonlinear optical susceptibility as a function of Al concentration (0, 2, 3, 5 at.%). The films were characterized by X-ray diffractometer (XRD), EDAX 9100 analyser, atomic force microscopy (AFM) and third harmonic generation (THG). The Al (3 at.%) doped ZnO thin films exhibited the lower strain/stress than undoped films. The nonlinear properties of the ZnO:Al thin films have been found to be influenced by the films strain/stress.

  15. Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Spee, D.A., E-mail: diederickspee@gmail.com; Rath, J.K.; Schropp, R.E.I.

    2015-01-30

    Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 ∗ 10{sup −6} g/m{sup 2}/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.

  16. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    Science.gov (United States)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  17. Deposition of rod-shaped antimony sulfide thin films from single-source antimony thiosemicarbazone precursors

    Energy Technology Data Exchange (ETDEWEB)

    Biswal, Jasmine B.; Sawant, Narayan V. [Department of Chemistry, University of Mumbai, Vidyanagari, Santacruz (East), Mumbai - 400 098 (India); Garje, Shivram S., E-mail: ssgarje@chem.mu.ac.i [Department of Chemistry, University of Mumbai, Vidyanagari, Santacruz (East), Mumbai - 400 098 (India)

    2010-04-02

    Antimony sulfide thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition technique using single source precursors, namely, antimony(III) thiosemicarbazones, SbCl{sub 3}(L) (L = thiosemicarbazones of thiophene-2-carboxaldehyde (1) and cinnamaldehyde (2)). The deposited films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and UV-visible spectroscopy in order to identify their phases, morphologies, compositions and optical properties respectively. These characterizations revealed that the films were comprised of rod-shaped particles of orthorhombic stibnite (Sb{sub 2}S{sub 3}) with a Sb:S stoichiometry of {approx} 1:1.3. The calculated optical band gap from UV-vis absorption spectrum is found to be 3.48 eV.

  18. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  19. Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

    Directory of Open Access Journals (Sweden)

    Veronika Vavrunkova

    2007-01-01

    Full Text Available We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

  20. Chemical Stability of Titania and Alumina Thin Films Formed by Atomic Layer Deposition.

    Science.gov (United States)

    Correa, Gabriela C; Bao, Bo; Strandwitz, Nicholas C

    2015-07-15

    Thin films formed by atomic layer deposition (ALD) are being examined for a variety of chemical protection and diffusion barrier applications, yet their stability in various fluid environments is not well characterized. The chemical stability of titania and alumina thin films in air, 18 MΩ water, 1 M KCl, 1 M HNO3, 1 M H2SO4, 1 M HCl, 1 M KOH, and mercury was studied. Films were deposited at 150 °C using trimethylaluminum-H2O and tetrakis(dimethylamido)titanium-H2O chemistries for alumina and titania, respectively. A subset of samples were heated to 450 and 900 °C in inert atmosphere. Films were examined using spectroscopic ellipsometry, atomic force microscopy, optical microscopy, scanning electron microscopy, and X-ray diffraction. Notably, alumina samples were found to be unstable in pure water, acid, and basic environments in the as-synthesized state and after 450 °C thermal treatment. In pure water, a dissolution-precipitation mechanism is hypothesized to cause surface roughening. The stability of alumina films was greatly enhanced after annealing at 900 °C in acidic and basic solutions. Titania films were found to be stable in acid after annealing at or above 450 °C. All films showed a composition-independent increase in measured thickness when immersed in mercury. These results provide stability-processing relationships that are important for controlled etching and protective barrier layers.

  1. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  2. Nonlinear optical properties of laser deposited CuO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Aiping [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Guang, E-mail: gyang@mail.hust.edu.c [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Long Hua; Li Fang; Li Yuhua [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lu Peixiang, E-mail: lupeixiang@mail.hust.edu.c [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2009-06-01

    In this work we investigate the third-order optical nonlinearities in CuO films by Z-scan method using a femtosecond laser (800 nm, 50 fs, 200 Hz). Single-phase CuO thin films have been obtained using pulsed laser deposition technique. The structure properties, surface image, optical transmittance and reflectance of the films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The Z-scan results show that laser-deposited CuO films exhibit large nonlinear refractive coefficient, n{sub 2} = - 3.96 x 10{sup -17} m{sup 2}/W, and nonlinear absorption coefficient, {beta} = - 1.69 x 10{sup -10} m/W, respectively.

  3. Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

    Science.gov (United States)

    Williams, J. E.; Camata, R. P.; Fedorov, V. V.; Mirov, S. B.

    2008-05-01

    We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2 2.6 μm spectral range.

  4. Effect of target density on the growth and properties of YGBCO thin films deposited by pulsed laser deposition

    Science.gov (United States)

    Liu, Linfei; Li, Yiejie; Wu, Xiang; Yao, Yanjie; Wang, Menglin; Wang, Binbin

    2016-12-01

    Some works found that target density had not a large effects on the superconducting or structural properties of YBa2Cu3O7-δ (YBCO) films prepared by pulsed laser deposition. However, the possible effect of target density on the Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) is not clear. In this paper, YGBCO thin films were deposited on flexible metal substrates by pulsed laser deposition using target with different densities. The density of each YGBCO target was varied from to 4.0 g/cm3 to 5.5 g/cm3. The aim of this study was to determine the relationship between the microstructure and superconducting properties of YGBCO films as a function of the target density. The film structures were examined by X-ray diffraction and field emission scanning electron microscopy. The superconducting properties of the YGBCO films were evaluated using the conventional four-probe method and PPMS. It was found that all the YGBCO films had pure c-axis orientation. The target density had effect on the surface morphology and superconducting properties of the YGBCO thin films. With increasing target density, the pore became larger and the distribution density and size of the particles became higher and larger, and the critical current Ic decreased. The YGBCO film deposited at a target density of 4.0 g/cm3 exhibited the highest critical current density Jc of 5.4 MA/cm2 at 77 K and self-field, 47.2 MA/cm2 at 0 T and 8.8 MA/cm2 at 9 T at 4.2 K and B//c.

  5. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  6. Design of Faraday cup ion detectors built by thin film deposition

    Science.gov (United States)

    Szalkowski, G. A.; Darrow, D. S.; Cecil, F. E.

    2017-03-01

    Thin film Faraday cup detectors can provide measurements of fast ion loss from magnetically confined fusion plasmas. These multilayer detectors can resolve the energy distribution of the lost ions in addition to giving the total loss rate. Prior detectors were assembled from discrete foils and insulating sheets. Outlined here is a design methodology for creating detectors using thin film deposition that are suited to particular scientific goals. The intention is to use detectors created by this method on the Joint European Torus (JET) and the National Spherical Torus Experiment-Upgrade (NSTX-U). The detectors will consist of alternating layers of aluminum and silicon dioxide, with layer thicknesses chosen to isolate energies of interest. Thin film deposition offers the advantage of relatively simple and more mechanically robust construction compared to other methods, as well as allowing precise control of film thickness. Furthermore, this depositional fabrication technique places the layers in intimate thermal contact, providing for three-dimensional conduction and dissipation of the ion-produced heating in the layers, rather than the essentially two-dimensional heat conduction in the discrete foil stack implementation.

  7. Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

    Energy Technology Data Exchange (ETDEWEB)

    Schropp, R.E.I., E-mail: r.e.i.schropp@tue.nl

    2015-11-30

    The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

  8. Study of deposition parameters for the fabrication of ZnO thin films using femtosecond laser

    Science.gov (United States)

    Hashmi, Jaweria Zartaj; Siraj, Khurram; Latif, Anwar; Murray, Mathew; Jose, Gin

    2016-08-01

    Femtosecond (fs) pulsed laser deposition (fs-PLD) of ZnO thin film on borosilicate glass substrates is reported in this work. The effect of important fs-PLD parameters such as target-substrate distance, laser pulse energy and substrate temperature on structure, morphology, optical transparency and luminescence of as-deposited films is discussed. XRD analysis reveals that all the films grown using the laser energy range 120-230 μJ are polycrystalline when they are deposited at room temperature in a ~10-5 Torr vacuum. Introducing 0.7 mTorr oxygen pressure, the films show preferred c-axis growth and transform into a single-crystal-like film when the substrate temperature is increased to 100 °C. The scanning electron micrographs show the presence of small nano-size grains at 25 °C, which grow in size to the regular hexagonal shape particles at 100 °C. Optical transmission of the ZnO film is found to increase with an increase in crystal quality. Maximum transmittance of 95 % in the wavelength range 400-1400 nm is achieved for films deposited at 100 °C employing a laser pulse energy of 180 μJ. The luminescence spectra show a strong UV emission band peaked at 377 nm close to the ZnO band gap. The shallow donor defects increase at higher pulse energies and higher substrate temperatures, which give rise to violet-blue luminescence. The results indicate that nano-crystalline ZnO thin films with high crystalline quality and optical transparency can be fabricated by using pulses from fs lasers.

  9. Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films

    Science.gov (United States)

    Piao, Jinchun; Katori, Shigetaka; Ikenoue, Takumi; Fujita, Shizuo

    2011-02-01

    Aluminum tris(8-hydroxyquinoline) (Alq3) thin films were fabricated by a vapor-deposition technique from its methanol solution, that is, by the ultrasonic-assisted mist deposition technique. The application of high ultrasonic power to the Alq3-methanol mixture resulted in a stable and transparent solution. Mist particles formed by ultrasonic atomization of the solution were used as the source for vapor-deposition at the substrate temperature of 100-200 °C. Optical absorption and photoluminescence characteristics indicated the formation of Alq3 thin films. The results promise the formation of thin films of a variety of organic materials by the solution-based technique.

  10. Magnetic and structural investigation of magnetic thin films with obliquely deposited underlayers

    CERN Document Server

    Hadley, M J

    2002-01-01

    An in-plane uniaxial magnetic anisotropy has been observed in thin Co films normally deposited onto obliquely sputtered Ta and Pt underlayers. Associated with this anisotropy is an augmented easy axis coercivity. The in-plane easy axis is, in most cases, perpendicular to the incident deposition plane. Microstructural results indicate that grains are well connected along the magnetic easy axis but are separated by long continuous voids along the hard axis, which is ascribed to a geometric shadowing effect due to the oblique incidence deposition of the underlayer. Hence, the magnetic anisotropy mimics the film growth anisotropy. It is therefore believed that the observed magnetic properties are due to magnetostatic shape anisotropy effects. In-plane coercivity and anisotropy field are shown to increase with underlayer deposition angle, underlayer thickness and magnetic layer thickness. The choice of capping layer is also observed to dramatically alter the magnetics, as did the sample temperature. In general, Pt...

  11. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  12. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    Science.gov (United States)

    Nair, M. T. S.; Nair, Padmanabhan K.; Garcia, Victor M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  13. Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

    Science.gov (United States)

    Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

    2013-05-10

    Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

  14. Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

    Energy Technology Data Exchange (ETDEWEB)

    De Bonis, A. [Dipartimento di Chimica ' A.M. Tamburro' , Universita della Basilicata, Via dell' Ateneo Lucano 10, 85100 Potenza (Italy); Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali - INSTM, Via G. Giusti 9, 00121 Florence (Italy); Teghil, R., E-mail: roberto.teghil@unibas.it [Dipartimento di Chimica ' A.M. Tamburro' , Universita della Basilicata, Via dell' Ateneo Lucano 10, 85100 Potenza (Italy); Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali - INSTM, Via G. Giusti 9, 00121 Florence (Italy); Santagata, A. [Istituto Metodologie Inorganiche e Plasmi, CNR, Unita di Potenza, via S. Loja, 85050 Tito Scalo PZ (Italy); Galasso, A. [Dipartimento di Chimica ' A.M. Tamburro' , Universita della Basilicata, Via dell' Ateneo Lucano 10, 85100 Potenza (Italy); Rau, J.V. [Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Rome (Italy)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer We have deposited amorphous tungsten carbide films by ultra-short PLD. Black-Right-Pointing-Pointer In the films different W-C phases are present. Black-Right-Pointing-Pointer The films are formed mainly by particles with nanometric size. Black-Right-Pointing-Pointer We propose that the particles are directly ejected from the target. - Abstract: Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

  15. Oxidation of ZnO thin films during pulsed laser deposition process

    Indian Academy of Sciences (India)

    E De Posada; L Moreira; J Pérez De La Cruz; M Arronte; L V Ponce; T Flores; J G Lunney

    2013-06-01

    Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited on (001) sapphire substrates at 400 °C, at two different oxygen pressures (0.3 and 0.4 mbar) and two different target–substrate distances (30 and 40 mm). It is observed that in order to obtain good quality in the photoluminescence of the films, associated with oxygen stoichiometry, it is needed to maximize the time during which the plasma remains in contact with the growing film (plasma residence time), which is achieved by selecting suitable combinations of oxygen pressures and target to substrate distances. It is also discussed that for the growth parameters used, the higher probability for ZnO films growth results from the oxidation of Zn deposited on the substrate and such process takes place during the time that the plasma is in contact with the substrate. Moreover, it is observed that maximizing the plasma residence time over the growing film reduces the rate of material deposition, favouring the surface diffusion of adatoms, which favours both Zn–O reaction and grain growth.

  16. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Science.gov (United States)

    Perrone, A.; D'Elia, M.; Gontad, F.; Di Giulio, M.; Maruccio, G.; Cola, A.; Stankova, N. E.; Kovacheva, D. G.; Broitman, E.

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  17. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); D’Elia, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); Di Giulio, M.; Maruccio, G. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Cola, A. [National Council Research, Institute for Microelectronics and Microsystems, 73100 Lecce (Italy); Stankova, N.E. [Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Kovacheva, D.G. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  18. Electrical conductivity mechanisms in zinc oxide thin films deposited by pulsed laser deposition using different growth environments

    Energy Technology Data Exchange (ETDEWEB)

    Heluani, S.P. [Laboratorio de Fisica del Solido, Departamento de Fisica, Facultad de Ciencias Exactas y Tecnologia, Universidad Nacional de Tucuman (Argentina)]. E-mail: sperez@herrera.unt.edu.ar; Braunstein, G. [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Villafuerte, M. [Laboratorio de Fisica del Solido, Departamento de Fisica, Facultad de Ciencias Exactas y Tecnologia, Universidad Nacional de Tucuman (Argentina); Simonelli, G. [Laboratorio de Fisica del Solido, Departamento de Fisica, Facultad de Ciencias Exactas y Tecnologia, Universidad Nacional de Tucuman (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina)

    2006-12-05

    The mechanisms of electrical conduction in zinc oxide thin films, grown by pulsed laser deposition, have been investigated as a function of preparation conditions. The films were deposited on glass and silicon nitride coated silicon, using oxygen rich, oxygen deficient, or nitrogen atmospheres. The substrates were held at 473 K during deposition, and subsequently cooled down to room temperature in oxygen rich atmosphere of 4 Pa, or oxygen deficient atmosphere of 2 x 10{sup -3} Pa. Films deposited and cooled in an oxygen deficient atmosphere exhibited very high donor concentration, originated in intrinsic defects, and an impurity band related mechanism of conduction. Films deposited under relatively high oxygen pressure were highly resistive and showed, upon ultraviolet light irradiation, grain boundary controlled electrical transport. An enhancement of the conductivity was observed when using a nitrogen atmosphere during the deposition, and oxygen atmosphere during cooling. In this case, the dependence of the conductivity with temperature followed Motts' Law of variable range hopping, characteristic of a material with localized states randomly located in space. Since the density of hopping centers appears to be much larger than the density of nitrogen incorporated in this sample, it is suggested that the nitrogen induces defects in the zinc oxide lattice that behave as localized hopping centers, as well as carrier suppliers, giving rise to the observed conductivity.

  19. Precise thin film synthesis by ion beam sputter deposition; Herstellung von Praezisionsschichten mittels Ionenstrahlsputtern

    Energy Technology Data Exchange (ETDEWEB)

    Gawlitza, P.; Braun, S.; Leson, A.; Lipfert, S. [Fraunhofer-Institut fuer Werkstoffphysik und Schichttechnologie (IWS), Dresden (Germany); Nestler, M. [Roth und Rau AG, Hohenstein-Ernstthal (Germany)

    2007-04-15

    Ion beam sputter deposition (IBSD) is a promising technique for the fabrication of high performance thin films because of the well defined and adjustable particle energies, which are rather high in comparison to other PVD techniques. Recent developments concerning long-term stability and lateral uniformity of the ion beam sources strengthen the position of the IBSD technique in the field of precise thin film synthesis. Furthermore, IBSD offers a more independent choice of relevant deposition parameters like particle energy and flux, process gas pressure and deposition rate. In this paper we present our currently installed large area IBSD facility 'IonSys 1600', which was developed by Fraunhofer IWS Dresden and Roth and Rau company (Hohenstein-Ernstthal). Substrate sizes of up to 200 mm (circular) or up to 500 mm length (rectangular) can be coated and multilayer stacks with up to six different materials are possible. Tailored 1- or 2- dimensional film thickness distribution with deviations of <0.1% can be fabricated by a relative linear motion of the substrate holder above an aperture. In order to demonstrate the advantages of the IBSD technique especially for sophisticated materials and films with high requirements concerning purity, chemical composition or growth structure, several examples of deposited multilayers for various applications are presented. (orig.)

  20. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  1. Adherent and Conformal Zn(S,O,OH) Thin Films by Rapid Chemical Bath Deposition with Hexamethylenetetramine Additive.

    Science.gov (United States)

    Opasanont, Borirak; Van, Khoa T; Kuba, Austin G; Choudhury, Kaushik Roy; Baxter, Jason B

    2015-06-03

    ZnS is a wide band gap semiconductor whose many applications, such as photovoltaic buffer layers, require uniform and continuous films down to several nanometers thick. Chemical bath deposition (CBD) is a simple, low-cost, and scalable technique to deposit such inorganic films. However, previous attempts at CBD of ZnS have often resulted in nodular noncontinuous films, slow growth rates at low pH, and high ratio of oxygen impurities at high pH. In this work, ZnS thin films were grown by adding hexamethylenetetramine (HMTA) to a conventional recipe that uses zinc sulfate, nitrilotriacetic acid trisodium salt, and thioacetamide. Dynamic bath characterization showed that HMTA helps the bath to maintain near-neutral pH and also acts as a catalyst, which leads to fast nucleation and deposition rates, continuous films, and less oxygen impurities in the films. Films deposited on glass from HMTA-containing bath were uniform, continuous, and 90 nm thick after 1 h, as opposed to films grown without HMTA that were ∼3 times thinner and more nodular. On Cu2(Zn,Sn)Se4, films grown with HMTA were continuous within 10 min. The films have comparatively few oxygen impurities, with S/(S+O) atomic ratio of 88%, and high optical transmission of 98% at 360 nm. The Zn(S,O,OH) films exhibit excellent adhesion to glass and high resistivity, which make them ideal nucleation layers for other metal sulfides. Their promise as a nucleation layer was demonstrated with the deposition of thin, continuous Sb2S3 overlayers. This novel HMTA chemistry enables rapid deposition of Zn(S,O,OH) thin films to serve as a nucleation layer, a photovoltaic buffer layer, or an extremely thin continuous coating for thin film applications. HMTA may also be applied in a similar manner for solution deposition of other metal chalcogenide and oxide thin films with superior properties.

  2. Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source

    Science.gov (United States)

    Li, Xingcun; Chen, Qiang; Sang, Lijun; Yang, Lizhen; Liu, Zhongwei; Wang, Zhenduo

    Self-limiting deposition of aluminum oxide (Al2O3) thin films were accomplished by the plasma-enhanced chemical vapor deposition using trimethyl aluminum (TMA) and O2 as precursor and oxidant, respectively, where argon was kept flowing in whole deposition process as discharge and purge gas. In here we present a novel plasma source for the atomic layer deposition technology, magnetized radio frequency (RF) plasma. Difference from the commercial RF source, magnetic coils were amounted above the RF electrode, and the influence of the magnetic field strength on the deposition rate and morphology are investigated in detail. It concludes that a more than 3 Å/ purging cycle deposition rate and the good quality of ALD Al2O3 were achieved in this plasma source even without extra heating. The ultra-thin films were characterized by including Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectric spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The high deposition rates obtained at ambient temperatures were analyzed after in-situ the diagnostic of plasmas by Langmuir probe.

  3. Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki; Shimomura, Kouji; Noro, Naotaka; Hasegawa, Toshio; Akasaka, Yasushi [SPE Core Technology Development Department, Tokyo Electron Yamanashi Ltd., 50 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan); Miyashita, Kohei [Leading Edge Process Development Center, Tokyo Electron Ltd., 650 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan)

    2016-01-15

    This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.

  4. Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

    Science.gov (United States)

    Juma, A.; Oja Acik, I.; Oluwabi, A. T.; Mere, A.; Mikli, V.; Danilson, M.; Krunks, M.

    2016-11-01

    Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 °C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  5. Epitaxial thin films grown by pulsed laser deposition

    NARCIS (Netherlands)

    Blank, D.H.A.

    2005-01-01

    In this paper, we present the pulsed laser deposition (PLD) technique to control the growth of metal oxide materials at atomic level using high-pressure reflective high-energy electron diffraction and ellipsometry. These developments have helped to make PLD a grown-up technique to fabricate complex

  6. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    Directory of Open Access Journals (Sweden)

    A.C. Nwanya

    2016-06-01

    Full Text Available Successive Ionic Layer Adsorption and Reaction (SILAR was used to deposit nanocrystalline cadmium oxide (CdO thin films on microscopic glass substrates for various cycles (40–120. This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12 with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD, UV–Visible Spectrophotomer (UV–Vis and Scanning Electron Microscopy (SEM. The 80th cycle was observed to be the saturation stage for this reaction. The XRD results confirmed the films to be CdO with some Cd(OH2 phase at higher deposition cycles. The films were polycrystalline in nature having high orientation along (111 and (200 planes. As the number of cycles increases the calculated average crystallite sizes increase gradually up till the 80th cycle after which a gradual decrease in the crystallite size was observed with increasing number of cycles. The films’ transmittance in the visible and near infrared region decreased as the number of cycles increased and ranged between 25 and 80%. This work shows the feasibility of using simple SILAR method at room temperature to obtain Cd(OH2 films which are transformed to CdO thin films after annealing.

  7. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    Science.gov (United States)

    Sall, Thierno; Marí Soucase, Bernabé; Mollar, Miguel; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In2S3 phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.

  8. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

    Science.gov (United States)

    Xinkun, Wu; Wei, Liu; Shuying, Cheng; Yunfeng, Lai; Hongjie, Jia

    2012-02-01

    Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 °C for 3 h Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. The experimental results show that, when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3, 6.96 Ω·cm, and 12.9 cm2/(V·s), respectively and the conduction type is p-type. Therefore, the CZTS thin films are suitable for absorption layers of solar cells.

  9. Photoelectric properties of ITO thin films deposited by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Liu Wei; Cheng Shuying

    2011-01-01

    As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that,the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 ℃, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150 ℃, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10-4 Ω.cm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

  10. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    吴新坤; 柳伟; 程树英; 赖云锋; 贾宏杰

    2012-01-01

    Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature,and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 ℃ for 3 h.Fabricated CZTS thin films were characterized by X-ray diffraction,energy dispersive X-ray spectroscopy,ultraviolet-visible-near infrared spectrophotometry,the Hall effect system,and 3D optical microscopy.The experimental results show that,when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15,the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV,and a direct band gap of about 1.47 eV.The carrier concentration,resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3,6.96 Ω.cm,and 12.9 cm2/(V.s),respectively and the conduction type is p-type.Therefore,the CZTS thin films are suitable for absorption layers of solar cells.

  11. Laser deposition of YBaCuO thin films: stress measurements and microstructure investigations

    Science.gov (United States)

    Gaboriaud, R. J.; Pailloux, F.

    1999-01-01

    Superconducting thin films of YBaCuO have been deposited by laser ablation at 750°C on MgO (001) single crystals. X-ray pole figures indicate a high crystalline quality of c-axis oriented films. A four-circle X-ray goniometer has been used for the measurements of the internal stress in the films by means of the fundamental metric tensor method generally used in the field of continuum mechanics. Microstructural investigation has been done by HRTEM on plan-view samples in order to study the film-substrate epitaxy relations from the observation of the moiré pattern brought about by the superimposition of both YBaCuO and MgO lattices (9% misfit). The results are discussed in terms of crystallographic accommodation and stress relaxation between the film and the substrate.

  12. Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sun Kyu, E-mail: skim@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Pham, Vuong-Hung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Chong-Hyun [Department of Food Science, Cornell University, Ithaca, NY 14853 (United States)

    2012-07-01

    Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.

  13. MAPLE deposition of Mn(III) metalloporphyrin thin films: Structural, topographical and electrochemical investigations

    Science.gov (United States)

    Cristescu, R.; Popescu, C.; Popescu, A. C.; Grigorescu, S.; Mihailescu, I. N.; Ciucu, A. A.; Iordache, S.; Andronie, A.; Stamatin, I.; Fagadar-Cosma, E.; Chrisey, D. B.

    2011-04-01

    We report the deposition by MAPLE of metallized nanostructured (5,10,15,20-tetraphenyl)porphinato manganese(III) chloride thin films onto gold screen-printed electrodes, or Si substrates. The deposited nanostructures were characterized by atomic force microscopy and exhibited globular structures with average diameters decreasing with laser fluence. Raman spectroscopy showed that no major decomposition appeared. We have investigated the Mn(III)-metalloporphyrin thin films by cyclic voltammetry in order to evaluate the potential bio/chemosensing activity on dopamine neurotransmitter analyte. We have found that the manganese(III)-porphyrin is appropriate as a single mediator for dopamine sensing in the specific case of gold screen-printed electrodes.

  14. MAPLE deposition of Mn(III) metalloporphyrin thin films: Structural, topographical and electrochemical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest, Magurele (Romania); Popescu, C.; Popescu, A.C.; Grigorescu, S.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest, Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Iordache, S.; Andronie, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, P.O. Box MG-38, Bucharest, Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, Department of Organic Chemistry, 300223 Timisoara (Romania); Chrisey, D.B. [Rensselaer Polytechnic Institute, Department of Materials Science and Engineering, Troy 12180-3590, NY (United States)

    2011-04-01

    We report the deposition by MAPLE of metallized nanostructured (5,10,15,20-tetraphenyl)porphinato manganese(III) chloride thin films onto gold screen-printed electrodes, or <1 1 1> Si substrates. The deposited nanostructures were characterized by atomic force microscopy and exhibited globular structures with average diameters decreasing with laser fluence. Raman spectroscopy showed that no major decomposition appeared. We have investigated the Mn(III)-metalloporphyrin thin films by cyclic voltammetry in order to evaluate the potential bio/chemosensing activity on dopamine neurotransmitter analyte. We have found that the manganese(III)-porphyrin is appropriate as a single mediator for dopamine sensing in the specific case of gold screen-printed electrodes.

  15. Effect of sputtering pressure on some properties of chromium thin films obliquely deposited

    Energy Technology Data Exchange (ETDEWEB)

    Besnard, A; Martin, N; Millot, C; Gavoille, J; Salut, R, E-mail: aurelien.besnard@ens2m.fr [Institut FEMTO-ST, UMR 6174 CNRS, Universite de Franche-Comte, ENSMM, UTBM, 32 avenue de l' observatoire, 25044 Besancon (France)

    2010-06-15

    Oriented columnar thin films provide a wide range of new properties linked to the large panel of available microstructures. The efficiency of the technique and thus the resulting structure, based on an incident flux of particles impinging on the substrate, depends on the distribution of the vapour source. The deposition pressure, which acts on the sputtered particles mean free path, is an important parameter, especially for sputtering processes. This study reports on the effect of different deposition pressures combined to a systematic change of the incidence angle of the sputtered particles, on the structural properties and electrical behaviours of obliquely sputtered chromium thin films. The results revealed higher performances and an enhanced control of the process at low sputtering pressure.

  16. Multifunctional thin films of lactoferrin for biochemical use deposited by MAPLE technique

    Science.gov (United States)

    Constantinescu, Catalin; Palla-Papavlu, Alexandra; Rotaru, Andrei; Florian, Paula; Chelu, Florica; Icriverzi, Madalina; Nedelcea, Anca; Dinca, Valentina; Roseanu, Anca; Dinescu, Maria

    2009-03-01

    Lactoferrin (Lf) is an iron-binding glycoprotein present in almost all mammalian secretions which plays an important role in host defense against microbial and viral infections. The protein has been reported to also have anti-inflammatory activity and antitumoral effects in vitro and in vivo. Thin films of Lf were deposited on silicon, quartz and Thermanox plastic coverslip substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique, using a Nd:YAG laser working at 266 nm, at different laser fluences (0.1-0.8 J cm -2). The deposited layers have been characterized by Fourier Transformed Infra-Red spectroscopy (FTIR), and the morphology of the various substrates was investigated by Atomic Force Microscopy (AFM). The biocompatibility of lactoferrin thin films was evaluated for each substrate, by in vitro biochemical tests.

  17. Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohtsuki, T., E-mail: ohtsuki@spring8.or.jp; Kotsugi, M.; Ohkochi, T. [Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Kojima, T.; Mizuguchi, M.; Takanashi, K. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2014-01-28

    FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu{sub 3}Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that the FeCo thin films show fourfold in-plane magnetic anisotropy along 〈110〉 direction, and that the magnetic domain structure is composed only of 90∘ wall.

  18. Thermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nie, Xianglong; Ma, Fei; Ma, Dayan, E-mail: madayan@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Kewei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, People' s Republic of China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710049 (China)

    2015-01-15

    Atomic layer deposition is adopted to prepare HfO{sub 2} and Al{sub 2}O{sub 3} high-k thin films. The HfO{sub 2} thin films are amorphous at the initial growth stage, but become crystallized when the film thickness (h) exceeds a critical value (h{sub critical}{sup *}). This phase transition from amorphous to crystalline is enhanced at higher temperatures and is discussed, taking into account the effect of kinetic energy. At lower temperatures, the amorphous state can be maintained even when h>h{sub critical}{sup *} owing to the small number of activated atoms. However, the number of activated atoms increases with the temperature, allowing crystallization to occur even in films with smaller thickness. The Al{sub 2}O{sub 3} thin films, on the other hand, maintain their amorphous state independent of the film thickness and temperature owing to the limited number of activated atoms. A thermodynamic model is proposed to describe the thickness-dependent phase transition.

  19. Single step deposition method for nearly stoichiometric CuInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.u [Materials and Physics Research Centre, University of Salford, Salford, M5 4WT (United Kingdom); Hill, Arthur E.; Pilkington, Richard D.; Cowpe, John S. [Materials and Physics Research Centre, University of Salford, Salford, M5 4WT (United Kingdom); Hisek, Joerg [Technische Universitaet Braunschweig, Hannover (Germany); Bagnall, Darren M. [School of Electronics and Computer Science, University of Southampton, SO17 1BJ (United Kingdom)

    2011-03-01

    This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe{sub 2}. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.

  20. Enhanced Photocatalytic Performance Depending on Morphology of Bismuth Vanadate Thin Film Synthesized by Pulsed Laser Deposition.

    Science.gov (United States)

    Jeong, Sang Yun; Choi, Kyoung Soon; Shin, Hye-Min; Kim, Taemin Ludvic; Song, Jaesun; Yoon, Sejun; Jang, Ho Won; Yoon, Myung-Han; Jeon, Cheolho; Lee, Jouhahn; Lee, Sanghan

    2017-01-11

    We have fabricated high quality bismuth vanadate (BiVO4) polycrystalline thin films as photoanodes by pulsed laser deposition (PLD) without a postannealing process. The structure of the grown films is the photocatalytically active phase of scheelite-monoclinic BiVO4 which was obtained by X-ray diffraction (XRD) analysis. The change of surface morphology for the BIVO4 thin films depending on growth temperature during synthesis has been observed by scanning electron microscopy (SEM), and its influence on water splitting performance was investigated. The current density of the BiVO4 film grown on a glass substrate covered with fluorine-doped tin oxide (FTO) at 230 °C was as high as 3.0 mA/cm(2) at 1.23 V versus the potential of the reversible hydrogen electrode (VRHE) under AM 1.5G illumination, which is the highest value so far in previously reported BiVO4 films grown by physical vapor deposition (PVD) methods. We expect that doping of transition metal or decoration of oxygen evolution catalyst (OEC) in our BiVO4 film might further enhance the performance.

  1. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Said-Bacar, Z., E-mail: zabardjade@yahoo.fr [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Prathap, P. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Cayron, C. [CEA, LITEN, DEHT, Minatec, 17 rue des Martyrs, 38054 Cedex 9 (France); Mermet, F. [IREPA LASER, Pole API - Parc d' Innovation, 67400 Illkirch (France); Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. Black-Right-Pointing-Pointer Large hydrogen content results in decohesion of the films due to hydrogen effusion. Black-Right-Pointing-Pointer Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. Black-Right-Pointing-Pointer Grains of size between 20 and 100 {mu}m in width and about 200 {mu}m in long in scanning direction are obtained with these latter films. - Abstract: This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration ({approx}10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  2. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Science.gov (United States)

    Birjega, R.; Vlad, A.; Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M.; Zavoianu, R.; Raditoiu, V.; Corobea, M. C.

    2016-06-01

    We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn2+/Al3+ ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  3. Vortex pinning in superconducting Nb thin films deposited on nanoporous alumina templates

    DEFF Research Database (Denmark)

    Vinckx, W.; Vanacken, J.; Moshchalkov, V.V.

    2006-01-01

    We present a study of magnetization and transport properties of superconducting Nb thin films deposited on nanoporous aluminium oxide templates. Periodic oscillations in the critical temperature vs. field, matching effects in fields up to 700 mT and strongly enhanced critical currents were observ...... centers, which enhances vortex pinning in broad field and temperature ranges. © EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006....

  4. Optical and structural properties of chemically deposited CdS thin films on polyethylene naphthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Concepcion, Casilla 160-C, Concepcion (Chile); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2011-11-30

    CdS thin films were deposited on polyethylene naphthalate substrates by means of the chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. Three sets of CdS films were grown in precursor solutions with different contents of Cd and thiourea maintaining constant the concentration ratios [Cd]/[thiourea] and [Cd]/[sodium citrate] at 0.2 and 0.1 M/M, respectively. The concentrations of cadmium in the reaction solutions were 0.01, 7.5 Multiplication-Sign 10{sup -3} and 6.8 Multiplication-Sign 10{sup -3} M, respectively. The three sets of CdS films were homogeneous, hard, specularly reflecting, yellowish and adhered very well to the plastic substrates, quite similar to those deposited on glass substrates. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and atomic force microscopy measurements. We found that the properties of the films depend on both the amount of Cd in the growth solutions and on the deposition time. The increasing of Cd concentration in the reaction solution yield to thicker CdS films with smaller grain size, shorter lattice constant, and higher energy band gap. The energy band gap of the CdS films varied in the range 2.42-2.54 eV depending on the precursor solution. The properties of the films were analyzed in terms of the growth mechanisms during the chemical deposition of CdS layers.

  5. Synthesis and characterization of PLZT thin films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Verardi, P.; Craciun, F. [CNR Istituto di Acustica, Via del Fosso del Cavaliere 100, 00133, Rome (Italy); Scarisoreanu, N.; Epurescu, G.; Dinescu, M.; Vrejoiu, I. [National Institute for Lasers, Plasma and Radiation Physics (NILPRP), P.O. Box MG-16, 76900, Bucharest (Romania); Dauscher, A. [Laboratoire de Physique des Materiaux (LPM) - UMR CNRS-UHP-INPL 7556, Ecole des Mines, Parc de Saurupt, 54042, Nancy Cedex (France)

    2004-09-01

    Thin films of Pb{sub 1-x}La{sub x}(Zr{sub 0.65}Ti{sub 0.35}){sub 1-x/4}O{sub 3} with x=0.09 (PLZT 9/65/35) have been grown by pulsed laser deposition (PLD) and by PLD assisted by radio frequency (RF) discharge in oxygen which increases the plasma reactivity and reduces the oxygen vacancies in films and at the film-bottom electrode interface. Significant compositional, structural and dielectric differences have been found among samples grown in the same deposition conditions excepting for RF power. Films grown by RF-assisted PLD have less pyrochlore and are more oriented. For these films dielectric permittivity vs. temperature variation was typical of relaxor ferroelectrics and the temperature of the dielectric maximum was close to that obtained in bulk, but the permittivity value was much lower. This was attributed mainly to the influence of a low permittivity interface layer and to the detrimental effect of pyrochlore phase, still present in small quantities even in the films obtained by RF-PLD. The dielectric behavior of films grown without RF discharge was very different: no dielectric anomaly was observed, only a step increase above 180 C. Moreover much higher dielectric loss was measured for these films. (orig.)

  6. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    Science.gov (United States)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  7. Effects of incidence angle on the structure and properties of cathodic vacuum arc deposition MgO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, D.Y., E-mail: zhudy@gdut.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Experiment Teaching Department, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Y. [College of Physics Science and Technology, Shenzhen University, Shenzhen 518060 (China); Zheng, C.X.; Wang, M.D.; Chen, D.H. [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, Z.H., E-mail: stshzh@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2012-06-15

    MgO thin films, as the protective layers for plasma display panels (PDP), were prepared by using cathodic vacuum arc deposition technique. The influences of deposition angle between -60 Degree-Sign and 60 Degree-Sign on film structure and properties were investigated. X-ray diffraction (XRD), ellipsometer, thermal field emission environment scanning electron microscopy (SEM) and UV-Visible spectrophotometry were used to study the properties of MgO thin films like crystallization, surface structures, thicknesses and refraction indices. Our results show that the thickness of MgO thin film decreases with the increase of incidence angle. This is confirmed by the transmittance spectra as well. The film deposited at 0 Degree-Sign shows sharper diffraction peaks and smaller FWHMs (full width at half maximum) of both MgO (200) and (220), which means better crystallization quality of the film. The higher packing density is achieved on the 0 Degree-Sign deposited film as well. - Highlights: Black-Right-Pointing-Pointer The thickness of MgO thin film decreases with the increase of incidence angle. Black-Right-Pointing-Pointer Low-angle deposition can increase film deposition rate and improve its crystallinity. Black-Right-Pointing-Pointer Multi-arc setting or rotating substrate is necessary for uniform deposition.

  8. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  9. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuhan, E-mail: yw9ep@virginia.edu; Kittiwatanakul, Salinporn; Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Comes, Ryan B. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Wolf, Stuart A. [Department of Materials Science and Engineering and Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  10. RAPID COMMUNICATION: ? thin film bilayers grown by pulsed laser ablation deposition

    Science.gov (United States)

    Singh, S. K.; Palmer, S. B.; McK Paul, D.; Lees, M. R.

    1996-09-01

    We have grown superconducting thin films of 0022-3727/29/9/044/img2 (Y-123) on 0022-3727/29/9/044/img3 (PCMO) buffer layers and PCMO overlayers on Y-123 thin films using pulsed laser ablation deposition. For both sets of films below 50 K, the Y-123 layer is superconducting and the zero-field cooled PCMO layer is insulating. The application of a magnetic field of 8 T results in an insulator - metal transition in the PCMO layer. This field-induced conducting state is stable in zero magnetic field at low temperature. The PCMO layer can be returned to an insulating state by annealing above 100 K. This opens the way for the construction of devices incorporating these oxide materials in which the electronic properties of key components such as the substrate or the barrier layer can be switched in a controlled way by the application of a magnetic field.

  11. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sirghi, L., E-mail: lsirghi@uaic.ro [Department of Physics, Alexandru Ioan Cuza University, Blvd. Carol I, 11, Iasi, 700506 (Romania); Hatanaka, Y. [Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku Naka-ku Hamamatsu, 432-8011 (Japan); Sakaguchi, K. [Faculty of Engineering, Aichi University of Technology, 50-2 Manori, Nishihazama, Gamagori, 443-0047 Aichi (Japan)

    2015-10-15

    Highlights: • TiOx thin films were deposited by radio frequency magnetron sputtering in Ar and Ar/H{sub 2}O plasma. • The deposited films contain OH groups in their bulk structure irrespective of the water content of the working gas. • The structure and photocatalytic activity of the deposited films were studied. - Abstract: The present work is investigating the photocatalytic activity of TiO{sub 2} thin films deposited by radiofrequency magnetron sputtering of a pure TiO{sub 2} target in Ar and Ar/H{sub 2}O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  12. Surface chemical studies of chemical vapour deposited diamond thin films

    CERN Document Server

    Proffitt, S

    2001-01-01

    could not easily be correlated to the bulk film properties. It is suggested that electron emission arises from the graphite component of graphite- diamond grain boundaries that are present in the nanocrystalline films. species. The adsorbed O and Cl species are more strongly bound to the K layer than they are to the diamond substrate, so thermal desorption of K from the K/CI/diamond or K/O/diamond surface results also in the simultaneous loss ofO and Cl. The phosphorus precursor trisdimethylaminophosphine (TDMAP) has a negligible reactive sticking probability on the clean diamond surface. This can be increased by thermal cracking of the gas phase precursor by a heated filament, resulting in non-activated adsorption to produce an adlayer containing a mixture of surface-bound ligands and phosphorus containing species. The ligands were readily lost upon heating, leaving P, some of which was lost from the surface at higher temperatures. Pre-hydrogenation of the diamond surface inhibited the uptake of cracked TDMA...

  13. Adhesion improvement of hydrogenated diamond-like carbon thin films by pre-deposition plasma treatment of rubber substrate

    OpenAIRE

    Bui, X. L.; Pei, Y.T.; Mulder, E.D.G.; De Hosson, J. Th. M.

    2009-01-01

    For reduction of friction and enhancement of wear resistance of dynamic rubber seals, thin films of hydrogenated diamond-like carbon (DLC) have been deposited on hydrogenated nitrile butadiene rubber (HNBR) via magnetron-enhanced plasma chemical vapor deposition (ME-PCVD). Pre-deposition plasma treatment of HNBR substrate is proved to be crucial for the improvement of film performance due to enhanced interfacial adhesion. The columnar structure and the crack network formed during deposition e...

  14. Investigation of chemical bath deposition of ZnO thin films using six different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Khallaf, Hani; Chai, Guangyu; Lupan, Oleg; Heinrich, Helge; Park, Sanghoon; Schulte, Alfons; Chow, Lee, E-mail: chow@mail.ucf.ed [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States)

    2009-07-07

    Chemical bath deposition of ZnO thin films using six different complexing agents, namely ammonia, hydrazine, ethanolamine, methylamine, triethanolamine and dimethylamine, is investigated. As-grown films were mainly ZnO{sub 2} with a band gap around 4.3 eV. Films annealed at 400 deg. C were identified as ZnO with a band gap around 3.3 eV. X-ray diffraction and micro-Raman spectroscopy revealed that as-grown films consist mainly of cubic zinc peroxide that was transformed into hexagonal ZnO after annealing. Rutherford backscattering spectroscopy (RBS) detected excess oxygen content in ZnO films after annealing. Fourier transform infrared spectroscopy of as-grown films showed a broad absorption band around 3300 cm{sup -1} suggesting that the as-grown films may consist of a mixture of zinc peroxide and zinc hydroxide. X-ray photoelectron spectroscopy multiplex spectra of the O 1s peak were found to be consistent with film stoichiometry revealed by RBS. High-resolution transmission electron micrographs showed small variations of the order of 10 nm in film thickness which corresponds to the average grain size. A carrier density as high as 2.24x10{sup 19} cm{sup -3} and a resistivity as low as 6.48 x 10{sup -1} OMEGA cm were obtained for films annealed at 500 deg. C in argon ambient.

  15. X-ray reflectivity analysis of titanium dioxide thin films grown by cathodic arc deposition.

    Science.gov (United States)

    Kleiman, A; Lamas, D G; Craievich, A F; Márquez, A

    2014-05-01

    TiO2 thin films deposited by a vacuum arc on a glass substrate were characterized by X-ray reflectivity (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Several thin films with different amounts of deposited TiO2 mass and different deposition and annealing temperatures were studied. A qualitative analysis of the XRD patterns indicated the presence of the anatase and/or rutile crystalline phases in most of the studied samples. From the analysis of the experimental XRR curves--which exhibited a wide angular range of oscillatory behavior--the thickness, mass density and interface roughness were determined. All XRR patterns were well fitted by modeled curves that assume the presence of a single and homogeneous TiO2 layer over which a very thin H2O layer is adsorbed. The thickest H2O adsorption layers were developed in films with the highest anatase content. Our overall results of the XRR analyses are consistent with those derived from the imaging techniques (SEM and AFM).

  16. Photoelectric and passivation properties of atomic layer deposited gradient AZO thin film

    Science.gov (United States)

    Zhao, Bin; Tang, Li-dan; Wang, Bing; Jia, Yi; Feng, Jia-heng

    2017-02-01

    Gradient Al-doped ZnO (AZO) thin films were deposited at 150 °C by atomic layer deposition (ALD) with different Al concentration gradient, and their photoelectric and passivation properties were investigated. With increasing Al concentration gradient from 0.09 to 1.21%/nm, Hall-effect showed that the resistivity of gradient AZO thin films deteriorates. The minimal resistivity (2.81 × 10-3 Ω cm), the maximum mobility (9.03 cm2/Vs) and the maximum carrier concentration (2.46 × 1020 cm-3) were obtained at 0.09%/nm Al concentration gradient. The average transmittance of all the gradient AZO films can be more than 85% in the visible region. In addition, gradient AZO thin films demonstrated excellent passivation properties. The maximum minority carrier lifetime (120.6 μs) and the minimal surface recombination velocity (≤208.3 cm/s) were obtained at 0.71%/nm Al concentration gradient.

  17. Femtosecond to nanosecond excited state dynamics of vapor deposited copper phthalocyanine thin films.

    Science.gov (United States)

    Caplins, Benjamin W; Mullenbach, Tyler K; Holmes, Russell J; Blank, David A

    2016-04-28

    Vapor deposited thin films of copper phthalocyanine (CuPc) were investigated using transient absorption spectroscopy. Exciton-exciton annihilation dominated the kinetics at high exciton densities. When annihilation was minimized, the observed lifetime was measured to be 8.6 ± 0.6 ns, which is over an order of magnitude longer than previous reports. In comparison with metal free phthalocyanine (H2Pc), the data show evidence that the presence of copper induces an ultrafast relaxation process taking place on the ca. 500 fs timescale. By comparison to recent time-resolved photoemission studies, this is assigned as ultrafast intersystem crossing. As the intersystem crossing occurs ca. 10(4) times faster than lifetime decay, it is likely that triplets are the dominant excitons in vapor deposited CuPc films. The exciton lifetime of CuPc thin films is ca. 35 times longer than H2Pc thin films, while the diffusion lengths reported in the literature are typically quite similar for the two materials. These findings suggest that despite appearing to be similar materials at first glance, CuPc and H2Pc may transport energy in dramatically different ways. This has important implications on the design and mechanistic understanding of devices where phthalocyanines are used as an excitonic material.

  18. Antibacterial effects of silver-doped hydroxyapatite thin films sputter deposited on titanium

    Energy Technology Data Exchange (ETDEWEB)

    Trujillo, Nathan A. [Dept. of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523-1374 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523-1376 (United States); Oldinski, Rachael A. [College of Engineering and Mathematical Science, University of Vermont, Burlington, VT 05405 (United States); Dept. of Bioengineering, University of Washington, Seattle, WA 98195-5061 (United States); Ma, Hongyan; Bryers, James D. [Dept. of Bioengineering, University of Washington, Seattle, WA 98195-5061 (United States); Williams, John D. [Dept. of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523-1374 (United States); Popat, Ketul C., E-mail: Ketul.Popat@colostate.edu [Dept. of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523-1374 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523-1376 (United States)

    2012-12-01

    Since many orthopedic implants fail as a result of loosening, wear, and inflammation caused by repeated loading on the joints, coatings such as hydroxyapatite (HAp) on titanium with a unique topography have been shown to improve the interface between the implant and the natural tissue. Another serious problem with long-term or ideally permanent implants is infection. It is important to prevent initial bacterial colonization as existing colonies have the potential to become encased in an extracellular matrix polymer (biofilm) that is resistant to antibacterial agents. In this study, plasma-based ion implantation was used to examine the effects of pre-etching on plain titanium. Topographical changes to the titanium samples were examined and compared via scanning electron microscopy. Hydroxyapatite and silver-doped hydroxyapatite thin films were then sputter deposited on titanium substrates etched at - 700 eV. For silver-doped films, two concentrations of silver ({approx} 0.5 wt.% and {approx} 1.5 wt.%) were used. Silver concentrations in the film were determined using energy dispersive X-ray spectroscopy. Hydroxyapatite film thicknesses were determined by measuring the surface profile using contact profilometry. Staphylococcus epidermidis and Pseudomonas aeruginosa adhesion studies were performed on plain titanium, titanium coated with hydroxyapatite, titanium coated with {approx} 0.5 wt.% silver-doped hydroxyapatite, and titanium coated with {approx} 1.5 wt.% silver-doped hydroxyapatite. Results indicate that less bacteria adhered to surfaces containing hydroxyapatite and silver; further, as the hydroxyapatite films delaminated, silver ions were released which killed bacteria in suspension. - Highlights: Black-Right-Pointing-Pointer We have developed a combination of plasma-based ion implantation and ion beam sputter deposition technique. Black-Right-Pointing-Pointer Silver-doped hydroxyapatite thin films on titanium were developed. Black-Right-Pointing-Pointer The

  19. DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

    2016-07-01

    Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

  20. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    OpenAIRE

    2016-01-01

    Successive Ionic Layer Adsorption and Reaction (SILAR) was used to deposit nanocrystalline cadmium oxide (CdO) thin films on microscopic glass substrates for various cycles (40–120). This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12) with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD), UV–Visible Spectrophotomer (UV–Vi...

  1. Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

    Directory of Open Access Journals (Sweden)

    Ching-Tao Li

    2014-01-01

    Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

  2. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnO,as a wide-band gap semiconductor,has recently become a new research fo-cus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy(L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition(PLD) . Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond(ns) pulsed laser abla-tion of ZnO ceramic target,the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  3. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    HE YongNing; ZHANG JingWen; YANG XiaoDong; XU QingAn; ZHU ChangChun; HOU Xun

    2007-01-01

    ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  4. Multicomponent Thin Films Deposited by PVD ARC and LARC Technology

    Directory of Open Access Journals (Sweden)

    Dagmar JAKUBÉCZYOVÁ

    2014-04-01

    Full Text Available The paper is focused on a comparison of advanced layers deposited by two coating technologies – cathodic arc deposition (ARC and lateral rotating cathodes (LARC. For characterization standard analyses were selected: the determination of the layer wear resistance by Calotest method, specification of the depth concentration profiles of constituting elements from the coating surface down to the substrate, and measurement of the nanohardness at dynamic loading. The thickness of the CrTiN layer reached 1380 nm – 1740 nm and that of the multi/nanolayers AlXN3 was 2630 nm – 3160 nm. The coating nanohardness on the surface attained 39 GPa for AlXN3 (X = Cr, 33 GPa for CrTiN and 12.5 GPa for the substrate. Only at coating prepared by LARC-Technology it is possible to create the multilayers of nanometric dimensions. AlXN3 coating was formed by 48 layers with dimensions of 58 nm – 70 nm. These nanolayers lead to the increase of system toughness as they prevent the crack propagation. Their application on the tools and components promises to increase their durability under service conditions.DOI: http://dx.doi.org/10.5755/j01.ms.20.1.3716

  5. Preparation and Properties of a-Si :H Thin Films Deposited on Different Substrates

    Institute of Scientific and Technical Information of China (English)

    RAO Rui

    2007-01-01

    The effects of different substrates on the structure and hydrogen evolution from a-Si:H thin films deposited by plasma enhanced chemical vapour deposition were studied, as well as the similar films exposed to an hydrogen plasma. Spectroscopic ellipsometry and hydrogen evolution measurements were used to analyse the effects of the substrate and hydrogen plasma on the films microstructure,thickness, hydrogen content. hydrogen bonding and hydrogen evolution. The hydrogen evolution spectra show a strong substrate dependence. In particular on crystalline silicon substrate, the formation of bubbles was observed. For different substrates, hydrogen plasma treatments lightly affected the hydrogen evolution spectra. These results indicate that the action of hydrogen in a-Si:H was modified by the nature of the substrate.

  6. Atomic layer deposition of Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  7. Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; YIN Min; WANG Jin-Xiao; HE De-Yan

    2005-01-01

    @@ Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at a low temperature of 350℃ using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from (111) to (220) with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density,low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.

  8. Reactive magnetron sputter deposition of superconducting niobium titanium nitride thin films with different target sizes

    CERN Document Server

    Bos, B G C; Haalebos, E A F; Gimbel, P M L; Klapwijk, T M; Baselmans, J J A; Endo, A

    2016-01-01

    The superconducting critical temperature (Tc>15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100 mm diameter) system and a large target (127 mm x 444.5 mm) one, with the aim of improving the film uniformity using the large target system. We focus on the Tc of the films and I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc>15 K. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system'...

  9. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K., E-mail: krmurthin@yahoo.co.in, E-mail: ramamurthi.k@ktr.srmuniv.ac.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur – 603 203, Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625 021, Tamil Nadu (India)

    2016-05-06

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO{sub 3} in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V{sub 2}O{sub 5} and V{sub 4}O{sub 7}. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10{sup −3} lin.{sup −2}m{sup −4} and 1.7263 × 10{sup 14} lin.m{sup −2}. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  10. Thin film of sol-gel deposited in photonic crystal fiber for cholesterol detection

    Science.gov (United States)

    Razo-Medina, D. A.; Alvarado-Méndez, E.; Trejo-Durán, M.

    2015-04-01

    In this work, the fabrication of thin films mixed with cholesterol enzyme as recognition component is shown, using solgel technique. The film was deposited at one end of photonic crystal fiber (optrode), which was used as carrier medium of sol-gel matrix. The concentration of cholesterol in the test sample was determined by the use of transmittance. Measuring device consists of a power source (laser diode), optrode and a light detector. The laser beam is transmitted through the optrode; the variations of intensity depending on cholesterol concentration are emitted to be detected by a photoresistor.

  11. Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

    Institute of Scientific and Technical Information of China (English)

    C.U. Mordi; M.A. Eleruja; B.A. Taleatu; G.O. Egharevba; A.V. Adedeji; 0.0. Akinwunmi; B. Olofinjana; C. Jeynes; E.O.B. Ajayi

    2009-01-01

    The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spec-troscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylaceto-nate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2.15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron mi-croscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than 1 micron for the deposited thin films of cobalt oxide.

  12. Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

    Science.gov (United States)

    Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

    2010-09-01

    We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

  13. Optical, structural and electrochromic properties of sputter- deposited W-Mo oxide thin films

    Science.gov (United States)

    Gesheva, K.; Arvizu, M. A.; Bodurov, G.; Ivanova, T.; Niklasson, G. A.; Iliev, M.; Vlakhov, T.; Terzijska, P.; Popkirov, G.; Abrashev, M.; Boyadjiev, S.; Jágerszki, G.; Szilágyi, I. M.; Marinov, Y.

    2016-10-01

    Thin metal oxide films were investigated by a series of characterization techniques including impedance spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, and Atomic Force Microscopy. Thin film deposition by reactive DC magnetron sputtering was performed at the Ångström Laboratory. W and Mo targets (5 cm diameter) and various oxygen gas flows were employed to prepare samples with different properties, whereas the gas pressure was kept constant at about 30 mTorr. The substrates were 5×5 cm2 plates of unheated glass pre-coated with ITO having a resistance of 40 ohm/sq. Film thicknesses were around 300 nm as determined by surface profilometry. Newly acquired equipment was used to study optical spectra, optoelectronic properties, and film structure. Films of WO3 and of mixed W- Mo oxide with three compositions showed coloring and bleaching under the application of a small voltage. Cyclic voltammograms were recorded with a scan rate of 5 mV s-1. Ellipsometric data for the optical constants show dependence on the amount of MoOx in the chemical composition. Single MoOx film, and the mixed one with only 8% MoOx have the highest value of refractive index, and similar dispersion in the visible spectral range. Raman spectra displayed strong lines at wavenumbers between 780 cm-1 and 950 cm-1 related to stretching vibrations of WO3, and MoO3. AFM gave evidence for domains of different composition in mixed W-Mo oxide films.

  14. Deposition of Chromium Thin Films on Stainless Steel-304 Substrates Using a Low Energy Plasma Focus Device

    Science.gov (United States)

    Javadi, S.; Ghoranneviss, M.; Hojabri, A.; Habibi, M.; Hosseinnejad, M. T.

    2012-06-01

    In this paper, we study thin films of chromium deposited on stainless steel-304 substrates using a low energy (1.6 kJ) plasma focus device. The films of chromium are likewise deposited with 25 focus shots each at various axial distances from the top of the anode (3, 5, 7, 9 and 11 cm). We also consider different angular positions with respect to the anode axis (0°, 15° and 30°) at a distance of 5 cm from the anode tip to deposit the chromium films on the stainless steel substrates. To characterize the structural properties of the films, we benefit from X-ray diffraction (XRD) analysis. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are applied as well to study the surface morphology of these deposited films. Furthermore, we make use of Vicker's micro-hardness measurements to investigate the mechanical properties of chromium thin films. The XRD results show that the degree of crystallinity of chromium thin films depends on the substrate axial and angular positions. The AFM images illustrate that the film deposited at the distance of 5 cm and the angular position of 0° has quite a uniform surface with homogeneous distribution of grains on the film surface. From the hardness results, we observe that the sample deposited at the axial distance of 5 cm from the anode tip and at the angle of 0° with respect to the anode axis, is harder than the other deposited films.

  15. Effect of the nozzle tip’s geometrical shape on electrospray deposition of organic thin films

    Science.gov (United States)

    Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko

    2017-04-01

    Electrospray deposition (ESD) is a favorable wet fabrication technique for organic thin films. We investigated the effects of the nozzle tip’s geometrical shape on the spraying properties of an organic solution used for ESD. Five types of cylindrical metal nozzles with zero (flat end) to four protrusions at the tips were prepared for depositing a solution of a small-molecule compound, tris(8-hydroxyquinolinato)aluminum (Alq3) solution. We confirmed that the diameter of the deposited droplets and their size dispersion decreased with an increase in the number of protrusions. The area occupation ratio of small droplets with a diameter smaller than 2 µm increased from 21 to 83% as the number of protrusions was increased from zero to four. The surface roughness root mean square of 60-nm-thick Alq3 films substantially improved from 32.5 to 6.8 nm with increasing number of protrusions.

  16. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Rik Groenen

    2015-07-01

    Full Text Available The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO3 thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO3 stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10−2 mbars and 10−1 mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  17. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  18. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan, E-mail: g.koster@utwente.nl [Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  19. Formation of β-FeSi 2 thin films by partially ionized vapor deposition

    Science.gov (United States)

    Harada, Noriyuki; Takai, Hiroshi

    2003-05-01

    The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of β-FeSi 2 thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of β-FeSi 2 films deposited on Si substrates. It was confirmed that β-FeSi 2 can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of β-FeSi 2 depends strongly on the content and the acceleration energy of ions.

  20. Effect of Processing Parameters on Performance of Spray-Deposited Organic Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Jack W. Owen

    2011-01-01

    Full Text Available The performance of organic thin-film transistors (OTFTs is often strongly dependent on the fabrication procedure. In this study, we fabricate OTFTs of soluble small-molecule organic semiconductors by spray-deposition and explore the effect of processing parameters on film morphology and device mobility. In particular, we report on the effect of the nature of solvent, the pressure of the carrier gas used in deposition, and the spraying distance. We investigate the surface morphology using scanning force microscopy and show that the molecules pack along the π-stacking direction, which is the preferred charge transport direction. Our results demonstrate that we can tune the field-effect mobility of spray-deposited devices two orders of magnitude, from 10−3 cm2/Vs to 10−1 cm2/Vs, by controlling fabrication parameters.

  1. Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

    Science.gov (United States)

    Jung, Jae-Soo; Lee, Sang-Hoon; Kim, Da-Seul; Kim, Kun-Su; Park, Soon-Won; Hwang, Nong-Moon

    2017-01-01

    The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as 150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.

  2. Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D.; Pătru, M.; Crisan, A.; Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crăciun, D. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Moura, C. [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Cunha, L., E-mail: lcunha@fisica.uminho.pt [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-15

    Highlights: • Structural evolution from β-Ta, to fcc-Ta(O,N), to amorphous Ta{sub 2}O{sub 5} with increasing P(N{sub 2} + O{sub 2}). • The substrate bias influences the N content, but does not influence the O content of the films. • The structural features of the films appear at lower P(N{sub 2} + O{sub 2}) when produced with grounded substrate. - Abstract: Tantalum oxynitride thin films were produced by magnetron sputtering. The films were deposited using a pure Ta target and a working atmosphere with a constant N{sub 2}/O{sub 2} ratio. The choice of this constant ratio limits the study concerning the influence of each reactive gas, but allows a deeper understanding of the aspects related to the affinity of Ta to the non-metallic elements and it is economically advantageous. This work begins by analysing the data obtained directly from the film deposition stage, followed by the analysis of the morphology, composition and structure. For a better understanding regarding the influence of the deposition parameters, the analyses are presented by using the following criterion: the films were divided into two sets, one of them produced with grounded substrate holder and the other with a polarization of −50 V. Each one of these sets was produced with different partial pressure of the reactive gases P(N{sub 2} + O{sub 2}). All the films exhibited a O/N ratio higher than the N/O ratio in the deposition chamber atmosphere. In the case of the films produced with grounded substrate holder, a strong increase of the O content is observed, associated to the strong decrease of the N content, when P(N{sub 2} + O{sub 2}) is higher than 0.13 Pa. The higher Ta affinity for O strongly influences the structural evolution of the films. Grazing incidence X-ray diffraction showed that the lower partial pressure films were crystalline, while X-ray reflectivity studies found out that the density of the films depended on the deposition conditions: the higher the gas pressure, the

  3. Thin-film deposition method assisted by mid-infrared-FEL

    CERN Document Server

    Yasumoto, M; Ishizu, A; Tsubouchi, N; Awazu, K; Umesaki, N

    2001-01-01

    We propose the novel application of the mid-infrared (MIR) FEL to the thin-film fabrication process. During the application, a substrate on which a thin film is being fabricated by a conventional method is simultaneously irradiated by the MIR FEL. The MIR FEL induces the fabricated molecules into the excited state of the stretching vibration energy, when the photon energy of the MIR FEL corresponds to one of the molecules. Therefore, the method can assist the thin-film fabrication quasi-independent of the substrate temperature. The method has the advantages of application on a temperature sensitive substrate and selective fabrication due to the tunable wavelength of the MIR FEL. In order to realize the method, we developed two thin film fabrication devices; an MIR FEL assisted RF sputtering device and an MIR FEL assisted laser ablation deposition device. For the method, the intensity of the assisted MIR FEL is an important problem. Thus the cross-section of the MIR FEL intensity profile is shown and the propa...

  4. KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz (100)

    Institute of Scientific and Technical Information of China (English)

    WANG; Xiaodong; PENG; Xiaofeng; ZHANG; Duanming

    2005-01-01

    Using the Sol-Gel method to produce the KTN ultrafine powder and the sintering technique with K2O atmosphere to prepare KTN ceramics as the targets instead of the KTN single crystal, highly oriented KTN thin films were produced on the transparent single crystal quartz (100) by the pulsed laser depositio