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Sample records for deposited cds films

  1. A comparative study of CdS thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2013-05-01

    Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

  2. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the ...

  3. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical ...

  4. Effect of protic solvents on CdS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Yao, Pin-Chuan; Chen, Chun-Yu

    2015-01-01

    In this study, cadmium sulfide (CdS) thin films are grown on glass substrates by chemical bath deposition (CBD) in an aqueous bath containing 10–20 vol.% alcohol. The roles of ethanol as a protic solvent that substantially improves the quality of films are explored extensively. The deposited films in an alcohol bath are found to be more compact and smoother with smaller CdS grains. The X-ray diffractograms of the samples confirm that all films were polycrystalline with mixed wurtzite (hexagonal) and zinkblende (cubic) phases. Raman spectra indicate that, for a film deposited in an alcohol bath, the position of 1LO is closer to the value for single crystal CdS, indicating that these films have a high degree of crystallinity. The as-deposited CdS thin films in a 10 vol.% alcohol bath were found to have the highest visible transmittance of 81.9%. XPS analysis reveals a stronger signal of C1s for samples deposited in the alcohol baths, indicating that there are more carbonaceous residues on the films with protic solvent than on the films with water. A higher XPS S/Cd atomic ratio for films deposited in an alcohol bath indicates that undesirable surface reactions (leading to sulfur containing compounds other than CdS) occur less frequently over the substrates. - Highlights: • Study of CBD-CdS films grown in an alcohol-containing aqueous bath is reported. • The deposited films in an alcohol bath are more compact with smaller CdS grains. • Raman spectra show that in an alcohol bath, the CdS film has a better crystallinity. • XPS reveals more carbon residues remain on the films deposited using alcohol bath. • In an alcohol bath, the undesirable surface reactions with Cd ions were hindered

  5. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  6. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

    2015-01-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  7. Influence of substrates on the structural and optical properties of ammonia-free chemically deposited CdS films

    International Nuclear Information System (INIS)

    Cao, M.; Li, L.; Zhang, B.L.; Huang, J.; Tang, K.; Cao, H.; Sun, Y.; Shen, Y.

    2012-01-01

    Highlights: ► CdS thin films were deposited on different substrate. ► We characterized the structure and morphology of deposited CdS thin films. ► The band gaps of CdS thin films were determined from the absorption spectra. - Abstract: CdS films were deposited on glass, indium-tin-oxide (ITO)/glass and Ti foil substrates by acidic chemical bath deposition technique. Effects of substrate type on the structural and optical properties of CdS films were studied. XRD patterns indicated that the structures of CdS films on ITO/glass and Ti foil were predominantly hexagonal and the structure of CdS films on glass was a mixed cubic and hexagonal. Atomic force microscope (AFM) analysis showed that the surface of CdS films on Ti foil substrate was rougher than that of CdS films on glass and ITO/glass substrates. The average transmittances of CdS films on glass and ITO/glass were about 71% and 75%, respectively. Diffuse reflection spectra also indicated the high transmittance of CdS films on Ti foil in the longer wavelength region, but PL and Raman spectra implied that more defects existed in CdS films on Ti foil substrate.

  8. CdS thin films formed on flexible plastic substrates by pulsed-laser deposition

    International Nuclear Information System (INIS)

    Acharya, K P; Skuza, J R; Lukaszew, R A; Liyanage, C; Ullrich, B

    2007-01-01

    The merger of a transparent plastic foil substrate with a semiconductor CdS film for a photonic application was realized using pulsed-laser deposition. Although plastic is not considered to be a favoured substrate material for semiconductor thin-film formation, the deposited CdS film possesses good adhesion, with a polycrystalline texture, flat surface (roughness/thickness = 0.003), and room-temperature photosensitivity with a blue-shifted peak at 2.54 eV. This work demonstrates the capability of pulsed-laser deposition to form novel heterostructures with appealing and useful technological properties such as plasticity and low weight

  9. Optical and structural properties of chemically deposited CdS thin films on polyethylene naphthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Concepcion, Casilla 160-C, Concepcion (Chile); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2011-11-30

    CdS thin films were deposited on polyethylene naphthalate substrates by means of the chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. Three sets of CdS films were grown in precursor solutions with different contents of Cd and thiourea maintaining constant the concentration ratios [Cd]/[thiourea] and [Cd]/[sodium citrate] at 0.2 and 0.1 M/M, respectively. The concentrations of cadmium in the reaction solutions were 0.01, 7.5 Multiplication-Sign 10{sup -3} and 6.8 Multiplication-Sign 10{sup -3} M, respectively. The three sets of CdS films were homogeneous, hard, specularly reflecting, yellowish and adhered very well to the plastic substrates, quite similar to those deposited on glass substrates. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and atomic force microscopy measurements. We found that the properties of the films depend on both the amount of Cd in the growth solutions and on the deposition time. The increasing of Cd concentration in the reaction solution yield to thicker CdS films with smaller grain size, shorter lattice constant, and higher energy band gap. The energy band gap of the CdS films varied in the range 2.42-2.54 eV depending on the precursor solution. The properties of the films were analyzed in terms of the growth mechanisms during the chemical deposition of CdS layers.

  10. Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

    Science.gov (United States)

    Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

    2008-04-15

    A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

  11. PIXE and RBS investigation of growth phases of ultra-thin chemical bath deposited CdS films

    International Nuclear Information System (INIS)

    Duncan, P.C.; Hinckley, S.; Gluszak, E.A.; Dytlewski, N.

    2002-01-01

    Polycrystalline CdS films, with thicknesses typically 20-180 nm, have been chemically deposited on glass substrates using an ammonia-cadmium-thiourea reaction solution. Film elemental composition, thickness and microstructure have been examined using proton-induced X-ray emission, Rutherford backscattering and atomic force microscopy. Analysis indicates that the stability of the deposition temperature plays a critical role in CdS film growth and composition. Films deposited with high temperature stability (60±0.5 deg. C) show a consistent 1:1 Cd:S atomic ratio for all stages of film growth, and have good substrate adhesion. Films deposited with lower temperature stability (60±4 deg. C) show initial high S concentrations, followed by a rapid increase in Cd concentration, until a final 1.2:1 Cd:S ratio is achieved. A mechanism is proposed to explain this difference in film composition and properties

  12. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped. CdS films. ... promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped ... solar cell efficiencies have been recently reported using CdS.

  13. Electronic and optical properties of CdS films deposited by evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, L.; Wei, Z.L.; Zhang, F.M.; Wu, X.S., E-mail: xswu@nju.edu.cn

    2015-11-05

    CdS films grown by thermal evaporation on glass substrate under ultra-high vacuum are prepared with varying the growth temperature and atmosphere environment. The minimum resistivity of the films is as low as 2.0 Ω·cm, and the carrier density even reaches 1.6 × 10{sup 18} cm{sup −3}, which is much less than that prepared by the chemical bath deposition (CBD) method. The transmittance and band gap increase with the set the argon atmosphere and the growth temperature in the optimum value. Our results indicate the CdS films grown by evaporation at high vacuum may be more suitable for the application in optoelectronic devices, such as the solar cell materials. - Highlights: • CdS films are grown by the ultra-high vacuum evaporation. • CdS film here with the high carrier density reaches to 10{sup 18} cm{sup −3} is obtained. • The film has low resistivity, which is as low as 2 Ω∙ cm. • The optical band gap become wider from 2.42 eV to 2.54 eV.

  14. Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Patil, S.B.; Singh, A.K.

    2010-01-01

    In the present paper photoelectrochemical (PEC) performance of bath deposited CdS thin films based on complexing agents i.e. ammonia and triethanolamine (TEA) has been discussed. Effect of annealing has also been analyzed. The as-deposited and annealed (at 523 K for 1 h in air) films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorption spectroscopy, SEM, electrochemical impedance spectroscopy (EIS), and PEC properties. XRD studies revealed that the films were nanocrystalline in nature with mixed hexagonal and cubic phases. TEA complex resulted in better crystallinity. Further improvement in the crystallinity of the films was observed after air annealing. The marigold flower-like structure, in addition to flakes morphology, was observed with TEA complex, whereas for ammonia complex only flakes morphology was observed. The UV-vis absorption studies revealed that the optical absorption edge for the films with ammonia and TEA complex was around 475 nm and 500 nm, respectively. Annealing of the films resulted in red shift in the UV-vis absorption. The PEC cell performance of CdS films was found to be strongly affected by crystallinity and morphology of the films resulted due to complexing agent and annealing. The air annealed film deposited using TEA complex showed maximum short circuit current density (J sc ) and open circuit voltage (V oc ) i.e. 99 μA/cm 2 and 376 mV respectively, under 10 mW/cm 2 of illumination. The films deposited using TEA complex showed good stability under PEC cell conditions.

  15. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

    2016-05-06

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  16. Optical Parameters of Spray-Deposited CdS1- y Te y Thin Films

    Science.gov (United States)

    Ikhmayies, Shadia J.

    2017-02-01

    CdS x Te1- x and CdS1- y Te y solid solutions are usually formed in the interfacial region in CdS/CdTe solar cells during the deposition of the CdTe layer and/or the processing steps of the device. In this work, indium-doped CdS1- y Te y thin films were prepared by first producing CdS:In thin films by the spray pyrolysis technique on glass substrates, then annealing the films in nitrogen atmosphere in the presence of elemental tellurium. The films were characterized by scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmittance measurements. The transmittance was used to deduce the reflectance from which the optical parameters were computed. The extinction coefficient, refractive index, the real and imaginary parts of the dielectric constant, optical conductivity, and energy loss were computed, and their dependence on the composition was investigated. In addition, the dispersion of the refractive index was analyzed by the single oscillator model, and dispersion parameters were investigated.

  17. In-situ boron doping of chemical-bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

    2009-01-01

    In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Comparison of CdS films deposited by different techniques: Effects on CdTe solar cell

    International Nuclear Information System (INIS)

    Lee, Jaehyeong

    2005-01-01

    Polycrystalline cadmium sulfide (CdS) thin-films were deposited on glass substrate by chemical bath deposition (CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling

  19. Analysis of the early growth mechanisms during the chemical deposition of CdS thin films by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.c [Centro de Investigacion y Estudios Avanzados del IPN. Unidad Queretaro, Apdo. postal 1-798, Queretaro, Qro., 76001 (Mexico); Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Concepcion, Casilla 160-C, Concepcion (Chile); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN. Unidad Queretaro, Apdo. postal 1-798, Queretaro, Qro., 76001 (Mexico)

    2009-10-30

    Chemically deposited CdS thin films were analyzed in this work by means of the spectroscopic ellipsometry technique. The CdS thin films were deposited from an ammonia-free process at short durations in order to obtain information about the layer microstructure and kinetic growth process. We found that the conditions of the ammonia-free reaction solution promote the ion-by-ion deposition process at the early growth stages yielding a compact, high refraction index and highly crystalline oriented CdS layers. Using a concentration of 1.82 mg/ml of cadmium in the reaction solution, the resulting films possess a double layer microstructure which consists of an inner compact layer and an external porous one. The inner layer is developed during the first 15 min of deposition time and it reaches a thickness around of 80 nm. After this time and on this inner layer of CdS, it grows an external porous layer whose thickness increases with the deposition time. The formation of the CdS compact layer at the early stages is related with the ion-by-ion growth mechanism. The subsequent CdS porous layer is formed during the cluster-by-cluster growth stage at longer deposition times. By reducing the cadmium concentration in reaction solution down to 0.76 mg/ml, maintaining constant molar ratio concentrations of Cd/complexing and Cd/thiourea, the chemically deposited CdS films develop only the inner compact layer with a thickness of about 80 nm after 35 min of deposition time.

  20. CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

    International Nuclear Information System (INIS)

    Rotaru, Andrei; Mietlarek-Kropidlowska, Anna; Constantinescu, Catalin; Scarisoreanu, Nicu; Dumitru, Marius; Strankowski, Michal; Rotaru, Petre; Ion, Valentin; Vasiliu, Cristina; Becker, Barbara; Dinescu, Maria

    2009-01-01

    Thin films of [Cd{SSi(O-Bu t ) 3 }(S 2 CNEt 2 )] 2 , precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.

  1. Structural and optical properties of Ni-doped CdS thin films prepared by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Premarani, R. [Arumugam Pillai SeethaiAmmal College, Thiruppattur-630211 (India); Saravanakumar, S., E-mail: sarophy84@gmail.com; Chandramohan, R. [SreeSevuganAnnamalai College, Devakottai-630303 (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of)

    2015-06-24

    The structural and optical behavior of undoped Cadmiun Sulphide (CdS) and Ni-doped CdS thinfilms prepared by Chemical Bath Deposition (CBD) technique is reported. The crystallite sizes of the thinfilms have been characterized by X-ray diffraction pattern (XRD). The particle sizes increase with the increase of Ni content in the CdS thinfilms. Scanning Electron Microscope (SEM) results indicated that CdS thinfilms is made up of aggregate of spherical-like particles. The composition was estimated by Energy Dispersive Analysis of X-ray (EDX) and reported. Spectroscopic studies revealed considerable improvement in transmission and the band gap of the films changes with addition of Ni dopant that is associated with variation in crystallite sizes in the nano regime.

  2. Effects of cadmium salts on the structure, morphology and optical properties of acidic chemical bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Cao, M.; Sun, Y.; Wu, J.; Chen, X.; Dai, N.

    2010-01-01

    Research highlights: → N-type semiconducting CdS thin films have been widely used as a window layer in the solar cells. CdS thin films prepared by chemical bath deposition (CBD) have been used in CdTe and CIGS based solar cells. Among existing techniques, CBD was simple and inexpensive to deposit CdS thin films for mass production. Typically, the CBD process for CdS films is carried out in an alkaline aqueous solution comprised of thiourea and ammonia. Recently, CBD process in acidic solutions has been developed and used for the optimization of CdS thin films. However, the effects of the variables for the acidic CBD, especially, the dependence on cadmium salts, have not been investigated systematically. In this paper, we studied the growth process, structure, morphology and optical properties of CdS thin films deposited using different cadmium salts, which is helpful for the optimization of growth condition for high quality CdS thin films used in solar cells. Acidic CBD-CdS thin films were prepared by using different cadmium salts. A post-annealing process at 380 o C was used to improve crystal quality. The CdS-C i thin films have the highest deposition rate than other films obtained by different solution, which is due to an easier releasing rate for Cd(CH 3 COO) 2 than the CdCl 2 and CdSO 4 solutions. CdS-Cl i thin films have a relatively larger band gaps and better qualities. Strong PL spectra at room temperature confirm the good quality of the CdS thin films. - Abstract: CdS thin films were deposited from different cadmium salts by using acidic chemical bath deposition (CBD) process. Quality characterizations were performed using different methods such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). The crystal quality of CdS thin films was improved after CdCl 2 thermal annealing at 380 o C. A compact structure of CdS thin films can be obtained by using CdCl 2 in comparison with the other cadmium salts. Although a Cd/S

  3. Cadmium sulphide (CdS) thin films deposited by chemical bath deposition (CBD) and dip coating techniques—a comparative study

    Science.gov (United States)

    Khimani, Ankurkumar J.; Chaki, Sunil H.; Malek, Tasmira J.; Tailor, Jiten P.; Chauhan, Sanjaysinh M.; Deshpande, M. P.

    2018-03-01

    The CdS thin films were deposited on glass slide substrates by Chemical Bath Deposition and dip coating techniques. The films thickness variation with deposition time showed maximum films deposition at 35 min for both the films. The energy dispersive analysis of x-ray showed both the films to be stoichiometric. The x-ray diffraction analysis confirmed the films possess hexagonal crystal structure. The transmission electron, scanning electron and optical microscopy study showed the films deposition to be uniform. The selected area electron diffraction exhibited ring patterns stating the films to be polycrystalline in nature. The atomic force microscopy images showed surface formed of spherical grains, hills and valleys. The recorded optical absorbance spectra analysis revealed the films possess direct optical bandgap having values of 2.25 eV for CBD and 2.40 eV for dip coating. The refractive index (η), extinction coefficient (k), complex dielectric constant (ε) and optical conductivity (σ 0) variation with wavelength showed maximum photon absorption till the respective wavelengths corresponding to the optical bandgap energy values. The recorded photoluminescence spectra showed two emission peaks. All the obtained results have been discussed in details.

  4. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

    2015-01-01

    In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

  5. Sequential electro-deposition of Bi{sub 2}S{sub 3}/CdS films as co-sensitizer photoanodes for liquid junction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Atanu; Hazra, Prasenjit; Hazra, Mukul; Datta, Jayati, E-mail: jayati_datta@rediffmail.com

    2016-11-01

    In this investigation multilayered conjugate films are formulated with Bi{sub 2}S{sub 3} and CdS nanoparticles (NPs) on FTO glass substrate. Thin layer Bi{sub 2}S{sub 3} was deposited and subsequently covered with various levels of CdS coating. Optical properties and XRD analysis of the films show existence of both the compound phases. The morphology of the films studied through electron microscopy reveals coverage of spherical CdS NPs on the network of Bi{sub 2}S{sub 3} NPs. The electrochemical impedance records and performances output characteristics of the n-type films show that the most efficient co-sensitizer matrix is produced with deep coating of CdS on thin layer of Bi{sub 2}S{sub 3}. - Highlights: • Multilayered Bi{sub 2}S{sub 3}/CdS conjugate films are formulated on FTO glass substrate. • Photo-degradation of Bi{sub 2}S{sub 3} is restricted by the coating of CdS layer. • High level of Cd coating on thin layer of Bi{sub 2}S{sub 3} have shown appreciable photocurrent output. • Photo-conversion efficiency of 0.93% is observed for the best conjugate film.

  6. Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

    2013-04-01

    Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

  7. Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: Insitu tin doping by chemical bath deposition technique

    CSIR Research Space (South Africa)

    Wilson, KC

    2014-01-01

    Full Text Available We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA...

  8. Size-dependent photodegradation of CdS particles deposited onto TiO{sub 2} mesoporous films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Rasin; Will, Geoffrey; Bell, John; Wang Hongxia, E-mail: hx.wang@qut.edu.au [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia)

    2012-09-15

    The particle size, size distribution and photostability of CdS nanoparticles incorporated onto mesoporous TiO{sub 2} films by a successive ionic layer adsorption and reaction (SILAR) method were investigated by Raman spectroscopy, UV-Visible spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). High-resolution TEM indicated that the synthesized CdS particles were hexagonal phase and the particle sizes were less than 5 nm for up to nine SILAR deposition cycles. Quantum size effect was found with the CdS-sensitized TiO{sub 2} films prepared with up to nine SILAR cycles. The band gap of CdS nanoparticles decreased from 2.65 to 2.37 eV with the increase of the SILAR cycles from 1 to 11. The investigation of the stability of the CdS/TiO{sub 2} films in air under illumination (440.6 {mu}W/cm{sup 2}) showed that the photodegradation rate was up to 85 % per day for the sample prepared with three SILAR cycles. XPS analysis indicated that the photodegradation was due to the oxidation of CdS, leading to the transformation from sulphide to sulphate (CdSO{sub 4}). Furthermore, the degradation rate was strongly dependent upon the particle size of CdS. Smaller particles showed faster degradation rate. The size-dependent photo-induced oxidization was rationalized with the variation of size-dependent distribution of surface atoms of CdS particles. Molecular dynamics-based theoretical calculation has indicated that the surface sulphide anion of a large CdS particle such as CdS made with 11 cycles (CdS Multiplication-Sign 11, average particle size = 5.6 nm) accounts for 9.6 % of the material whereas this value is increased to 19.2 % for (CdS Multiplication-Sign 3)-based smaller particles (average particle size = 2.7 nm). The photostability of CdS nanoparticles was significantly enhanced when coated with ZnS particles deposited with four SILAR cycles. The growth mechanism of ZnS upon CdS nanoparticles was discussed.

  9. AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process

    International Nuclear Information System (INIS)

    Mazon-Montijo, D.A.; Sotelo-Lerma, M.; Rodriguez-Fernandez, L.; Huerta, L.

    2010-01-01

    This paper deals with a detailed study of the growth stages of CdS thin films on ITO/glass substrates by chemical bath deposition (CBD). The chemical and morphological characterization was done through X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), and atomic force microscopy (AFM) techniques. On the other hand, optical transmission and X-ray diffraction (XRD) measurements were performed in order to study the optical and structural properties of the films. The time, the chemistry, and morphology of the different stages that form the growth process by CBD were identified through these results. Furthermore, clear evidence was obtained of the formation of Cd(OH) 2 as the first chemical species adhered to the substrate surface which forms the first nucleation centers for a good CdS formation and growth. On the other hand, the ITO coating caused growth stages to occur earlier than in just glass substrates, with which we can obtain a determined thickness in a shorter deposition time. We were able to prove that CBD is a good technique for the manufacture of thin films of semiconductor materials, since the CdS film does not have any impurities. Completely formed films were transparent, uniform, with good adherence to the substrate, of a polycrystalline nature with a hexagonal structure. These results indicate that films obtained by CBD are good candidates to be applied in different optoelectronic devices.

  10. Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

    Science.gov (United States)

    Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

    1999-06-01

    The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivitiy have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80 % range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells.

  11. Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [University Mohamed V, Laboratory of Materials Physics, Dept., Faculty of Sciences, Rabat (Morocco)

    1999-06-01

    The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivity have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80% range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells. (authors)

  12. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    International Nuclear Information System (INIS)

    Gonzalez, G.; Krishnan, B.; Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K.; Shaji, S.

    2011-01-01

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  13. Structural, compositional, and optoelectronic properties of thin-film CdS on p-GaAs prepared by pulsed-laser deposition

    International Nuclear Information System (INIS)

    Acharya, K.P.; Mahalingam, K.; Ullrich, B.

    2010-01-01

    Thin-film CdS (300-400 nm) was deposited onto p-GaAs with low-temperature pulsed-laser deposition (PLD) using 532 nm emission of a Nd:YAG laser (6 ns, 10 Hz). The ablation threshold takes place at a fluence of 0.64 J/cm 2 and the deposition rate reaches its maximum at 2.68 J/cm 2 , while further fluence increase caused a deposition rate drop due to plume shielding. X-ray investigations illustrated that the CdS film texture is composed of nano-sized crystallites (10-30 nm) embedded in an amorphous matrix. Energy dispersive analysis of X-ray and electron probe microanalysis revealed almost stoichiometric composition. Alternating photocurrent spectroscopy showed that the CdS/GaAs sample exhibits intrinsic room-temperature responsivity, which might be useful for specific optoelectronic interconnects. The work emphasizes versatility and straightforwardness of PLD to form operative devices based on hetero-pairing.

  14. Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

    International Nuclear Information System (INIS)

    Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

    2016-01-01

    The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

  15. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  16. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    International Nuclear Information System (INIS)

    Han, Jun-feng; Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef; Liao, Cheng; Jaegermann, Wolfram; Besland, M.P.

    2015-01-01

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface

  17. Preparation of CdS1-xSex thin films by a chemical deposition method and examination of some optical and photo electrical properties

    International Nuclear Information System (INIS)

    Toshev, P.; Ristova, M.; Mitreski, M.; Andonovski, B.

    1995-01-01

    The method of chemical deposition of CdS 1-x Se x is based on the chemical reaction between the hydroxy-citric complex of the cadmium, with sulfide and selenide ions, produced by the chemical decomposition of thiourea and sodium seleno sulfate, in alkali media. Sodium silicate glass was used for substrates. The composition of the thin films was verified by X-ray analyses. From the optical spectra, as well as from the spectra] sensitivity of the photoconductivity, the values of the band gaps (E g ) were evaluated for a set of 10 samples of'CdS 1-x Se x , where x varies from 0 to 1. It was found that the E g value decreases with the increase of x. (Author)

  18. Chemically deposited TiO2/CdS bilayer system for ...

    Indian Academy of Sciences (India)

    Chemical bath deposition (CBD)method was employed to deposit CdS thin film on pre-deposited TiO2 film. A further study has beenmade for structural, surface morphological, optical and photoelectrochemical (PEC) properties of FTO/TiO2, FTO/CdS and FTO/TiO2/CdS bilayers system. PEC behaviour of FTO/TiO2/CdS ...

  19. Chemical synthesis of porous web-structured CdS thin films for photosensor applications

    International Nuclear Information System (INIS)

    Gosavi, S.R.; Nikam, C.P.; Shelke, A.R.; Patil, A.M.; Ryu, S.-W.; Bhat, J.S.; Deshpande, N.G.

    2015-01-01

    The photo-activity of chemically deposited cadmium sulphide (CdS) thin film has been studied. The simple chemical route nucleates the CdS films with size up to the mean free path of the electron. Growth Kinematics of crystalline hexagonal CdS phase in the thin film form was monitored using X-ray diffraction. The time limitation set for the formation of the amorphous/nano-crystalline material is 40 and 60 min. Thereafter enhancement of the crystalline orientation along the desired plane was identified. Web-like porous structured surface morphology of CdS thin film over the entire area is observed. With decrease in synthesis time, increase of band gap energy i.e., a blue spectral shift was seen. The activation energy of CdS thin film at low and high temperature region was examined. It is considered that this activation energy corresponds to the donor levels associated with shallow traps or surface states of CdS thin film. The photo-electrochemical performance of CdS thin films in polysulphide electrolyte showed diode-like characteristics. Exposure of light on the CdS electrode increases the photocurrent. This suggests the possibility of production of free carriers via excited ions and also the light harvesting mechanism due to porous web-structured morphology. These studies hint that the obtained CdS films can work as a photosensor. - Highlights: • Photoactivity of chemically synthesized cadmium sulphide (CdS) thin films was studied. • Web-like porous structured surface morphology of CdS thin film over the entire area was observed. • Blue spectral shift with lowering of the synthesis time suggests films can act as a window layer over the absorber layer. • Porous web-structured CdS thin films can be useful in light harvesting

  20. Effects of bacteria on CdS thin films used in technological devices

    Science.gov (United States)

    Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

    2017-04-01

    Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

  1. Studies on structural, optical, and photoelectric properties of CdS{sub 1-x}Se{sub x} films fabricated by selenization of chemical bath deposited CdS films

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Tianyu; Gu, Han; Ge, Zhenhua; Zhang, Lei; Wang, Zhicheng; Fang, Yong; Han, Zhida; Qian, Bin; Jiang, Xuefan [Department of Physics, Changshu Institute of Technology, Changshu (China); Wu, Wangping [School of Mechanical Engineering, Changzhou University, Changzhou (China)

    2017-02-15

    In this paper, high-photosensitive CdS{sub 1-x}Se{sub x} films are synthesized by a two-step technique, which includes the chemical bath deposition of CdS films and a following selenization process. The structural, optical, and photoelectric properties of the CdS{sub 1-x}Se{sub x} films were investigated. With the substitution of selenium for sulfur atoms, grain sizes of the as-prepared CdS{sub 1-x}Se{sub x} films are effectively enlarged and reach the scales of the films thickness when the selenization temperature exceeds 450 C. With increasing the selenization temperature from 350 to 550 C, the band gaps of CdS{sub 1-x}Se{sub x} films gradually decrease from 2.37 to 1.82 eV. Under the co-action of the grain-size enlargement and band-gap decrease, the CdS{sub 1-x}Se{sub x} films fabricated at 450 C show very pronounced photosensitivity. Noteworthy, the ratio of photo to dark conductivity of the CdS{sub 1-x}Se{sub x} film selenized at 450 C reaches 1.1 x 10{sup 5}, suggesting a promising application potential in the photoelectric devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. CdS sintered films: growth and characteristics

    International Nuclear Information System (INIS)

    Sharma, Monika; Kumar, Sushil; Sharma, L.M.; Sharma, T.P.; Husain, M.

    2004-01-01

    Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. CdS, with a band gap of 2.43 eV, is a suitable window material in heterojunction solar cells that employ CdTe, Cu 2 S or CuInSe 2 as an absorber. Polycrystalline films of CdS, thickness ∼15 μm, were grown onto chemically clean and optically plane glass substrates by sintering process. A 10 min sintering time and 500 deg. C sintering temperature were found to be optimum. As deposited films were characterized through optical, structural and electrical transport properties using optical reflection spectroscopy, X-ray diffractometry and I-V characteristics techniques

  3. The role of Cl in the chemical bath on the properties of CdS thin films

    International Nuclear Information System (INIS)

    Maticiuc, Natalia; Hiie, Jaan; Raadik, Taavi; Graf, Aleksandr; Gavrilov, Aleksei

    2013-01-01

    The impact of chlorine (Cl) concentration in the chemical bath deposition (CBD) solution on the properties of post-deposition annealed cadmium sulfide (CdS) thin films on glass substrates was investigated. CBD CdS films with a thickness of 250 nm were deposited from a standard bath containing cadmium sulfate, ammonia and thiourea. For doping of the CdS films with Cl, ammonium chloride was also added to the bath. The CBD process is characterized by the opportunity it provides to incorporate solution components like hydroxide group and chlorine into the lattice of growing films. CBD CdS thin films with different [Cl]/[Cd] ratios were characterized. The structural as well as electrical and photoluminescence (PL) properties of CBD CdS thin films indicated the creation of electrically and optically active defects in the CdS lattice in the deposition process. Both the incorporated hydroxychloride groups and H 2 annealing play a substantial role in controlling the CdS electrical and optical properties. A good correlation between the PL and electrical properties of CBD CdS thin films was achieved and explained on the basis of a classical understanding of donor–acceptor pairs formed by the Cl S + and (V Cd Cl S ) − centers and emergence of Cd excess in CBD CdS lattice due to destruction of incorporated hydroxide groups in the annealing process. - Highlights: ► CdS thin films prepared by chemical bath deposition were characterized. ► Different chlorine doping concentration and H 2 annealing were applied. ► Both doping and annealing were used to control the properties of CdS films. ► A correlation was found between photoluminescence and electrical properties

  4. Physical properties and characterization of Ag doped CdS thin films

    International Nuclear Information System (INIS)

    Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

    2012-01-01

    Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

  5. Growth techniques used to develop CDS/CDTE thin film solar cells ...

    African Journals Online (AJOL)

    Growth techniques used to develop CDS/CDTE thin film solar cells: a review. ... Techniques such as molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) called melt growth or Bridgman are well known as high quality semiconductor growth techniques. One of the limitations of these ...

  6. Structural and Optical Properties of Core-Shell TiO2/CdS Prepared by Chemical Bath Deposition

    Science.gov (United States)

    Al-Jawad, Selma M. H.

    2017-10-01

    Titanium dioxide (TiO2) nanorod arrays (NRAs) sensitized with cadmium sulfide (CdS) nanoparticles (NPs) were deposited by chemical bath deposition (CBD). TiO2 NRAs were also obtained by using the same method on glass substrates coated with fluorine-doped tin oxide (FTO). The structure of the FTO/TiO2/CdS core-shell was characterized by x-ray diffraction (XRD), atomic force microscopy, scanning electron microscopy, ultraviolet-visible (UV-Vis) absorption spectroscopy, photoluminescence, and photoelectrocatalysis of FTO/TiO2 and FTO/TiO2/CdS. The FTO/TiO2 conformed to anatase and rutile phase structures for different pH values and also with annealing. XRD patterns of the FTO/TiO2/CdS sample exhibited two peaks corresponding to hexagonal (100) and (101) for CdS. Scanning electron micrographs showed nanorod structures for the TiO2 thin films deposited at a pH value equal 0.7. Optical results showed the CdS deposited on nanorod TiO2 exhibited increased absorption ability in the visible light, indicating an increased photocatalytic activity for TiO2/CdS core-shell nanorods in the visible light. When illuminated with a UV-Vis light source, the TiO2/CdS core-shell films displayed high responses. A composite exists between the TiO2 nanostructure and CdS NPs because the film absorbs the incident light located in both the visible and UV-Vis regions. A higher response to UV-Vis light was attained with the use of TiO2 NRAs/CdS NPs films prepared by CBD. This approach offers a technique for fabricating photoelectrodes.

  7. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  8. Optical properties of CdS sintered film

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Chemical method has been used to prepare cadmium sulphide by using cadmium, hydrochloric acid and H2S. The reflection spectra of covered and uncovered sintered films of CdS have been recorded by 'Hitachi spectrophotometer' over the wavelength range 300–700 nm. The energy band gaps of these films ...

  9. Optical properties of CdS sintered film

    Indian Academy of Sciences (India)

    Chemical method has been used to prepare cadmium sulphide by using cadmium, hydrochloric acid and H2S. The reflection spectra of covered and uncovered sintered films of CdS have been recorded by 'Hitachi spectrophotometer' over the wavelength range 300–700 nm. The energy band gaps of these films have been ...

  10. A study on the enhancement of opto-electronic properties of CdS thin films: seed-assisted fabrication

    Science.gov (United States)

    Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

    2017-04-01

    A novel method of fabricating chemical bath deposited CdS thin films (CBD-CdS) by using electrodeposited CdS (ED-CdS) as a seed layer is reported. The resulting thin, compact, uniform and adherent seed-assisted CdS films (ED/CBD-CdS) show enhanced effective surface area compared to both ED-CdS and CBD-CdS. The phase of these CdS films was determined to be hexagonal. The fabricated ED/CBD-CdS films show higher photoelectrochemical (PEC) cell efficiency than either ED-CdS and CBD-CdS thin films. Carrier concentration and flat band potential values for ED/CBD-CdS systems are also found to be superior compared to both ED-CdS and CBD-CdS systems.

  11. Structural analysis of CdS thin films obtained by multiple dips of oscillating chemical bath

    International Nuclear Information System (INIS)

    Gutierrez Lazos, C.D.; Rosendo, E.; Ortega, M.; Oliva, A.I.; Tapia, O.; Diaz, T.; Juarez, H.; Garcia, G.; Rubin, M.

    2009-01-01

    Highly oriented CdS thin films with thicknesses greater than 1 μm were deposited by multiple dips, using oscillating chemical bath deposition (OCBD) at the bath temperature of 75 deg. C, and deposition time ranging from 15 to 75 min for a single dip. Samples with different thickness were prepared by repeating the deposition process for two and three times. The films deposited by a single dip have the α-greenockite structure showing the (0 0 2) as preferred orientation, as indicated by the X-ray diffraction measurements. This notable characteristic is preserved in the samples obtained from two or three dips. The crystallite size for the samples deposited by a single dip depends on the deposition time, because it varied from 23 to 37 nm as the deposition time increased. Nevertheless for samples deposited by two and three dips, the grain size shows no noticeable change, being about 22 nm.

  12. Structural analysis of CdS thin films obtained by multiple dips of oscillating chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Lazos, C.D. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Rosendo, E., E-mail: erosendo@siu.buap.m [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Ortega, M. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Oliva, A.I. [Departamento de Fisica Aplicada, Centro de Investigacion y de Estudios Avanzados, Unidad Merida, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico); Tapia, O.; Diaz, T.; Juarez, H.; Garcia, G. [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Rubin, M. [Facultad de Ciencias de la Computacion, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico)

    2009-11-25

    Highly oriented CdS thin films with thicknesses greater than 1 mum were deposited by multiple dips, using oscillating chemical bath deposition (OCBD) at the bath temperature of 75 deg. C, and deposition time ranging from 15 to 75 min for a single dip. Samples with different thickness were prepared by repeating the deposition process for two and three times. The films deposited by a single dip have the alpha-greenockite structure showing the (0 0 2) as preferred orientation, as indicated by the X-ray diffraction measurements. This notable characteristic is preserved in the samples obtained from two or three dips. The crystallite size for the samples deposited by a single dip depends on the deposition time, because it varied from 23 to 37 nm as the deposition time increased. Nevertheless for samples deposited by two and three dips, the grain size shows no noticeable change, being about 22 nm.

  13. Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

    KAUST Repository

    Salas Villaseñor, Ana L.

    2014-06-01

    Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

  14. Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

    Science.gov (United States)

    Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

    2017-08-01

    Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

  15. Characterization of CdS thin films electrodeposited by an alternating current electrolysis method

    International Nuclear Information System (INIS)

    Fatas, E.; Herrasti, P.; Arjona, F.; Camarero, E.G.

    1986-01-01

    Conventional electrochemical methods of making CdS films are anodic oxidation of cadmium in a solution containing sulfide ions, and cathodic reduction from solutions containing soluble metal and sulfur compounds. In this paper a method is presented in which a CdS layer is deposited by a.c. electrolysis. The substrate is a glass plate covered by a layer of tin oxide. The electrolyte is an aqueous solution containing cadmium sulphate, ammonium sulphate, sodium thiosulphate, sodium chloride and glycerol. The applied a.c. voltages correspond to symmetrical and asymmetrical rectangular waves. During the electrolysis two electrodes are alternately connected to positive and negative potentials. As a result, Cd/sup 2+/ and S/sup 2-/ particles deposit at each electrode by turns, which results in the formation of a CdS layer

  16. Improving the efficiency of ITO/nc-TiO2/CdS/P3HT:PCBM/PEDOT:PSS/Ag inverted solar cells by sensitizing TiO2 nanocrystalline film with chemical bath-deposited CdS quantum dots.

    Science.gov (United States)

    Chen, Chong; Li, Fumin

    2013-10-31

    An improvement in the power conversion efficiency (PCE) of the inverted organic solar cell (ITO/nc-TiO2/P3HT:PCBM/PEDOT:PSS/Ag) is realized by depositing CdS quantum dots (QDs) on a nanocrystalline TiO2 (nc-TiO2) film as a light absorption material and an electron-selective material. The CdS QDs were deposited via a chemical bath deposition (CBD) method. Our results show that the best PCE of 3.37% for the ITO/nc-TiO2/CdS/P3HT:PCBM/PEDOT:PSS/Ag cell is about 1.13 times that (2.98%) of the cell without CdS QDs (i.e., ITO/nc-TiO2/P3HT:PCBM/PEDOT:PSS/Ag). The improved PCE can be mainly attributed to the increased light absorption and the reduced recombination of charge carriers from the TiO2 to the P3HT:PCBM film due to the introduced CdS QDs.

  17. A composite CdS thin film/TiO2 nanotube structure by ultrafast successive electrochemical deposition toward photovoltaic application.

    Science.gov (United States)

    Fu, Han; Liu, Hong; Shen, Wenzhong

    2014-01-01

    Fabricating functional compounds on substrates with complicated morphology has been an important topic in material science and technology, which remains a challenging issue to simultaneously achieve a high growth rate for a complex nanostructure with simple controlling factors. Here, we present a novel simple and successive method based on chemical reactions in an open reaction system manipulated by an electric field. A uniform CdS/TiO2 composite tubular structure has been fabricated in highly ordered TiO2 nanotube arrays in a very short time period (~90 s) under room temperature (RT). The content of CdS in the resultant and its crystalline structure was tuned by the form and magnitude of external voltage. The as-formed structure has shown a quite broad and bulk-like light absorption spectrum with the absorption of photon energy even below that of the bulk CdS. The as-fabricated-sensitized solar cell based on this composite structure has achieved an efficiency of 1.43% without any chemical doping or co-sensitizing, 210% higher than quantum dot-sensitized solar cell (QDSSC) under a similar condition. Hopefully, this method can also easily grow nanostructures based on a wide range of compound materials for energy science and electronic technologies, especially for fast-deploying devices.

  18. Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

    2011-10-17

    Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

  19. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    International Nuclear Information System (INIS)

    Kim, Donguk; Park, Young; Kim, Minha; Choi, Youngkwan; Park, Yong Seob; Lee, Jaehyoeng

    2015-01-01

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T g , the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C

  20. Flexible pressure sensor based on graphene aerogel microstructures functionalized with CdS nanocrystalline thin film

    Science.gov (United States)

    Plesco, Irina; Dragoman, Mircea; Strobel, Julian; Ghimpu, Lidia; Schütt, Fabian; Dinescu, Adrian; Ursaki, Veaceslav; Kienle, Lorenz; Adelung, Rainer; Tiginyanu, Ion

    2018-05-01

    In this paper, we report on functionalization of graphene aerogel with a CdS thin film deposited by magnetron sputtering and on the development of flexible pressure sensors based on ultra-lightweight CdS-aerogel nanocomposite. Analysis by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray analysis disclose the uniform deposition of nanocrystalline CdS films with quasi-stoichiometric composition. The piezoresistive response of the aforementioned nanocomposite in the pressure range from 1 to 5 atm is found to be more than one order of magnitude higher than that inherent to suspended graphene membranes, leading to an average sensitivity as high as 3.2 × 10-4 kPa-1.

  1. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  2. A study of size dependent structure, morphology and luminescence behavior of CdS films on Si substrate

    International Nuclear Information System (INIS)

    Kaushik, Diksha; Singh, Ragini Raj; Sharma, Madhulika; Gupta, D.K.; Lalla, N.P.; Pandey, R.K.

    2007-01-01

    Size tunable cadmium sulfide (CdS) films deposited by a dip coating technique on silicon (100) and indium tin oxide/glass substrates have been characterized using X-ray diffraction, X-ray reflectivity, transmission electron microscopy, atomic force microscopy and photoluminescence spectroscopy. The structural characterization indicated growth of an oriented phase of cadmium sulfide. Transmission electron microscopy used to calculate the particle size indicated narrow size dispersion. The tendency of nanocrystalline CdS films to form ordered clusters of CdS quantum dots on silicon (100) substrate has been revealed by morphological studies using atomic force microscopy. The photoluminescence emission spectroscopy of the cadmium sulfide films has also been investigated. It is shown that the nanocrystalline CdS exhibit intense photoluminescence as compared to the large grained polycrystalline CdS films. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the observed photoluminescence behavior of CdS is substantially enhanced when the nanocrystallites are assembled on silicon (100) substrate

  3. Optical and AFM study of electrostatically assembled films of CdS and ZnS colloid nanoparticles

    International Nuclear Information System (INIS)

    Suryajaya; Nabok, A.; Davis, F.; Hassan, A.; Higson, S.P.J.; Evans-Freeman, J.

    2008-01-01

    CdS and ZnS semiconducting colloid nanoparticles coated with the organic shell, containing either SO 3 - or NH 2 + groups, were prepared using the aqueous phase synthesis. The multilayer films of CdS (or ZnS) were deposited onto glass, quartz and silicon substrates using the technique of electrostatic self-assembly. The films produced were characterized with UV-vis spectroscopy, spectroscopic ellipsometry and atomic force microscopy. A substantial blue shift of the main absorption band with respect to the bulk materials was found for both CdS and ZnS films. The Efros equation in the effective mass approximation (EMA) theoretical model allowed the evaluation of the nanoparticle radius of 1.8 nm, which corresponds well to the ellipsometry results. AFM shows the formation of larger aggregates of nanoparticles on solid surfaces

  4. Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

    2014-01-01

    UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

  5. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  6. Raman spectroscopy of optical properties in CdS thin films

    Directory of Open Access Journals (Sweden)

    Trajić J.

    2015-01-01

    Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

  7. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  8. Chemical Bath Deposition and characterization of CdS – PbS thin ...

    African Journals Online (AJOL)

    ... exponentially between the second half of the visible and near infra-red regions. The films have peak reflectance within the visible region. The films showed good characteristics for deployment not only as UV filters but also in solar control coating applications. Keywords: Chemical bath, CdS, PbS, Thin Films, transmittance.

  9. A comparative study on CdS: PEO and CdS: PMMA nanocomposite solid films

    Energy Technology Data Exchange (ETDEWEB)

    Padmaja, S. [Thin film centre, PSG College of Technology, Coimbatore (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Department of Physics, PSG Institute of Technology and Applied Research, Coimbatore (India); Balaji, R.; Vaideki, K. [Thin film centre, PSG College of Technology, Coimbatore (India)

    2016-08-15

    Cadmium Sulphide (CdS) nanoparticles were reinforced in Poly(ethylene Oxide) (PEO) and Poly(methyl methacrylate) (PMMA) matrices by in situ technique. The presence of CdS in PEO and PMMA matrix was confirmed using X-ray photoelectron spectroscopy (XPS). Fourier Transform Infrared spectroscopy (FTIR) analysis disclosed the co-ordination of CdS in the matrices. Thermal analysis of the nanocomposites was carried out using Differential Scanning calorimetric studies (DSC). The optical studies using UV–vis spectroscopy were carried out to find the band gap of the materials and the absorption onset. The CdS particle size in the matrices was found by Effective Mass Approximation (EMA) model using the band gap values and was confirmed by TEM studies. The surface trapped emissions of the nanocomposites were observed from the photoluminescence (PL) spectra. The distribution of CdS particles in the polymer matrices were presented by Atomic force microscopic studies (AFM).

  10. A comparative study on CdS: PEO and CdS: PMMA nanocomposite solid films

    International Nuclear Information System (INIS)

    Padmaja, S.; Jayakumar, S.; Balaji, R.; Vaideki, K.

    2016-01-01

    Cadmium Sulphide (CdS) nanoparticles were reinforced in Poly(ethylene Oxide) (PEO) and Poly(methyl methacrylate) (PMMA) matrices by in situ technique. The presence of CdS in PEO and PMMA matrix was confirmed using X-ray photoelectron spectroscopy (XPS). Fourier Transform Infrared spectroscopy (FTIR) analysis disclosed the co-ordination of CdS in the matrices. Thermal analysis of the nanocomposites was carried out using Differential Scanning calorimetric studies (DSC). The optical studies using UV–vis spectroscopy were carried out to find the band gap of the materials and the absorption onset. The CdS particle size in the matrices was found by Effective Mass Approximation (EMA) model using the band gap values and was confirmed by TEM studies. The surface trapped emissions of the nanocomposites were observed from the photoluminescence (PL) spectra. The distribution of CdS particles in the polymer matrices were presented by Atomic force microscopic studies (AFM).

  11. Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

    2013-11-01

    We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

  12. Improving the optical and crystalline properties on CdS thin films growth on small and large area by using CBD technique

    Energy Technology Data Exchange (ETDEWEB)

    Albor A, M. L.; Flores M, J. M.; Hernandez V, C.; Contreras P, G.; Mejia G, C.; Rueda M, G. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Unidad Profesional Adolfo Lopez Mateos, Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Departamento de Formacion Basica, Unidad Profesional Adolfo Lopez Mateos, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    CdS polycrystalline thin films have been used as window layer in solar cells; the optical and crystalline quality of the CdS-partner plays and important role in the photovoltaic device performance. CdS thin films were deposited by using Chemical Bath Deposition. The SnO{sub 2}:F substrates used were chemically treated with HCl (0.1 M) and others were thermally annealed in different atmospheres (Ar and O{sub 2}). The physical properties of CdS thin films were influenced by the HCl treatment, position, size and the substrates movement inside the reaction beaker. The CdS samples were deposited in areas of 4 cm{sup 2}, 50 cm{sup 2} and 100 cm{sup 2}. Finally CdS thin films with thickness of 35-300 nm with good optical and crystalline quality on a uniform morphology were obtained. Transmittance values were obtained for all samples about 85-90 % with an average of gap energy of 2.5 eV. The structural characteristics of the samples were determined by the X-ray diffraction patterns, by means of a D-500 Siemens X-ray system. (Author)

  13. On the effects of implanted hydrogen on photoelectronic properties of CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahdjoubi, L.; Benmalek, M.

    1987-01-01

    The purpose of this work is to study the effect of ion-implantation in CdS thin films. This study was done from the point of view to improve the control of the photoelectric properties of this compound. Thus, several materials such as In, Ga, Cl, Cu and Ag which are commonly used as dopants in CdS, have been implanted and their effects were nearly similar to those of classical doping methods. However, hydrogene leads to somewhat inexpected results since, as we are going to see, drastical changes occur in the photoelectronic properties of the thus treated CdS films.

  14. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    Thermal and structural properties of CdS thin film. 235. 235 by photoacoustic technique. Polycrystalline CdTe films having 55 µm thickness were grown onto the glass slides using the close space vapour technique. The total thick- ness of two-layer system (glass and CdSe thin film) could be changed by varying the thickness ...

  15. Investigations on microstructural and optical properties of CdS films fabricated by a low-cost, simplified spray technique using perfume atomizer for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K.; Philominathan, P. [PG and Research Department of Physics, AVVM, Sri Pushpam College, Poondi, Thanjavur District, Tamil Nadu (India)

    2008-11-15

    Good quality CdS films were fabricated by employing a simplified spray pyrolysis technique using perfume atomizer. CdS films have been deposited from aqueous solutions of sulphur and cadmium, keeping the molar concentrations of S:Cd = 0.01:0.01, 0.02:0.02, 0.04:0.04 and 0.06:0.06 in the starting solutions. The structural studies reveal that the S:Cd concentration has a strong influence on the microstructural characteristics of the sprayed CdS films. It was found that there is a transition in the preferred orientation from (0 0 2) plane to (1 0 1) plane when S:Cd molar concentration increases. The SEM images depict that the films are uniform and homogeneous. All the films have high optical transmittance (>80%) in the visible range. The optical band gap values are found to be in the range of 2.46-2.52 eV. CdS films fabricated by this simple and economic spray technique without using any carrier gas are found to be good in structural and optical properties which are desirable for photovoltaic applications. Hence, this simplified version of spray technique can be considered as an economic alternative to conventional spray pyrolysis (using carrier gas), for the mass production of low-cost, large area CdS coatings for solar cell applications. (author)

  16. Photoelectrochemical and Raman characterization of In2O3 mesoporous films sensitized by CdS nanoparticles

    Directory of Open Access Journals (Sweden)

    Mikalai V. Malashchonak

    2013-04-01

    Full Text Available The method of successive ion layer adsorption and reaction was applied for the deposition of CdS nanoparticles onto a mesoporous In2O3 substrate. The filling of the nanopores in In2O3 films with CdS particles mainly occurs during the first 30 cycles of the SILAR deposition. The surface modification of In2O3 with CdS nanoparticles leads to the spectral sensitization of photoelectrochemical processes that manifests itself in a red shift of the long-wavelength edge in the photocurrent spectrum by 100–150 nm. Quantum-confinement effects lead to an increase of the bandgap from 2.49 to 2.68 eV when decreasing the number of SILAR cycles from 30 to 10. The spectral shift and the widening of the Raman line belonging to CdS evidences the lattice stress on the CdS/In2O3 interfaces and confirms the formation of a close contact between the nanoparticles.

  17. van der Waals epitaxy of CdS thin films on single-crystalline graphene

    Science.gov (United States)

    Sun, Xin; Lu, Zonghuan; Xie, Weiyu; Wang, Yiping; Shi, Jian; Zhang, Shengbai; Washington, Morris A.; Lu, Toh-Ming

    2017-04-01

    van der Waals epitaxy (vdWE) of three-dimensional CdS thin films on both single-crystalline graphene/Cu(111)/spinel(111) and single-crystalline graphene/SiO2/Si substrates is achieved via thermal evaporation. X-ray and electron backscatter diffraction pole figures reveal that the CdS films are a Wurtzite structure with a weak epitaxy on graphene and accompanied with a fiber texture background. The epitaxial alignment between CdS and graphene is observed to be an unusual non-parallel epitaxial relationship with a 30° rotation between the unit vectors of CdS and graphene. A geometrical model based on the minimization of superlattice area mismatch is employed to calculate possible interface lattice arrangement. It is found that the 30° rotation between CdS and graphene is indeed the most probable interface epitaxial lattice alignment. The vdWE of CdS on graphene, transferrable to arbitrary substrates, may represent a step forward for the growth of quality CdS thin films on arbitrary substrates through a graphene buffer.

  18. Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films: Solar cell applications

    International Nuclear Information System (INIS)

    Fang Li; Chen Jing; Xu Ling; Xu Jun; Ma Zhong-Yuan; Su Wei-Ning; Yu Yao

    2013-01-01

    Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42–2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300°C show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained. (interdisciplinary physics and related areas of science and technology)

  19. Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Li, Yan Tao [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Material Science and Engineering, Henan University of Technology, Zhengzhou 454052 (China); Hu, Chu Xiong [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-09-15

    Highlights: • CdS/silicon nanoporous pillar array (CdS/Si-NPA) was prepared by a CBD method. • The PL spectrum of CdS/Si-NPA was measured at different temperatures, from 10 to 300 K. • The PL spectrum was composed of four emission bands, obeying different mechanisms. • The PL degradation with temperature was due to phonon-induced escape of carriers. - Abstract: Si-based cadmium sulfide (CdS) is a prospective semiconductor system in constructing optoelectronic nanodevices, and this makes the study on the factors which may affect its optical and electrical properties be of special importance. Here we report that CdS thin film was grown on Si nanoporous pillar array (Si-NPA) by a chemical bath deposition method, and the luminescent properties of CdS/Si-NPA as well as its mechanism were studied by measuring and analyzing its temperature-dependent photoluminescence (PL) spectrum. The low-temperature measurement disclosed that the PL spectrum of CdS/Si-NPA could be decomposed into four emission bands, a blue band, a green band, a red band and an infrared band. The blue band was due to the luminescence from Si-NPA substrate, and the others originate from the CdS thin film. With temperature increasing, the peak energy, PL intensity and peak profile shape for the PL bands from CdS evolves differently. Through theoretical and fitting analyses, the origins of the green, red and infrared band are attributed to the near band-edge emission, the radiative recombination from surface defects to Cd vacancies and those to S interstitials, respectively. The cause of PL degradation is due to the thermal quenching process, a phonon-induced electron escape but with different activation energies. These results might provide useful information for optimizing the preparing parameters to promote the performance of Si-based CdS optoelectronic devices.

  20. Electrical Characterization of Vapor-Deposited Single CdS Nanowire

    Science.gov (United States)

    Fu, X. L.; Tang, W. H.; Li, L. H.

    In this work, we synthesized chromium-doped CdS nanowires by simple vapor deposition. And the current-voltage characteristics of single CdS nanowire have been studied. The results from electrical transport measurements on the field-effect transistors showed that the nanowire was an n-type semiconductor. In addition, the Au/CdS nanowire device exhibited clear diode-like behavior, and a thermally-assisted tunneling mechanism, which dominates the transport of carriers above the metal-semiconductor contact in the diode, was discussed in detail.

  1. Laser deposition of HTSC films

    International Nuclear Information System (INIS)

    Sobol', Eh.N.; Bagratashvili, V.N.; Zherikhin, A.N.; Sviridov, A.P.

    1990-01-01

    Studies of the high-temperature superconducting (HTSC) films fabrication by the laser deposition are reviewed. Physical and chemical processes taking place during laser deposition are considered, such as the target evaporation, the material transport from the target to the substrate, the film growth on the substrate, thermochemical reactions and mass transfer within the HTSC films and their stability. The experimental results on the laser deposition of different HTSC ceramics and their properties investigations are given. The major technological issues are discussed including the deposition schemes, the oxygen supply, the target compositions and structure, the substrates and interface layers selection, the deposition regimes and their impact on the HTSC films properties. 169 refs.; 6 figs.; 2 tabs

  2. Optical properties of CdS sintered film

    Indian Academy of Sciences (India)

    Unknown

    the field of II–VI semiconductors for their use in solar cells. Cadmium sulphide belonging to the II–VI group is the most widely used material for CdS/CdTe and CdS/Cu2S heterojunction solar cells. It is because of the fact that CdS has intermediate energy band gap, reasonable conversion efficiency, stability and low cost ...

  3. The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films

    Directory of Open Access Journals (Sweden)

    G.S. Khrypunov

    2017-07-01

    Full Text Available To create technology for preparation of CdS and CdTe thin films by direct current magnetron sputtering, the influence of physical and technological condensation modes on the crystal structure and optical properties of these films were investigated. The laboratory method of DC magnetron sputtering with preheating of the target for the mentioned films on glass substrates was developed. We obtained the CdS layers with hexagonal structure 150…200 nm thick under conditions when the plasma discharge current density was 1.1 mA/cm2 and the deposition rate – 30…40 nm/min. The bandgap in the obtained CdS films is Eg = 2.38…2.41 eV. After annealing in vacuum, the optical transparence of CdS films reaches 80…90%, which allows to use these films as a transparent window layer in solar cells based on heterojunctions of CdS/CdTe. When the plasma discharge current density is 2.2…5.4 mA/cm2 and the deposition rate is 200 nm/min, we obtained CdTe layers with hexagonal structure up to 5 µm thick. The transmittance of CdTe films with hexagonal structure in the wavelength range of the visible spectrum is up to 5%, and in the infrared spectral range is about 60%. The bandgap in the obtained CdTe layers of different thickness is 1.52…1.54 eV. After chloride treatment as a result of the phase transition wurtzite–sphalerite, the investigated CdTe films contain only the stable cubic structure and can be used as a base layer of solar cells.

  4. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    probes is not advisable and such measurements are less reliable. But here in photoacoustics, these are avoided and so the results are reliable. The present measurements show that the thermal transport properties are small com- pared to the bulk CdS. This is in conformity with earlier measurements on various other films ...

  5. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nazir, Adnan, E-mail: adnan.nazir@iit.it [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Toma, Andrea [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Panaro, Simone [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Butt, Sajid [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Sagar, Rizwan ur Rehman [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Raja, Waseem [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Rasool, Kamran [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering Pakistan, Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Maqsood, Asghari [Department of Physics, Air University, Islamabad (Pakistan)

    2014-10-01

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10{sup 6} Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10{sup 3} Ω cm) against a 20% cut in optical transmission.

  6. Adhesion of laser deposited films

    International Nuclear Information System (INIS)

    Zhovannik, E.V.; Nikolaev, I.N.; Utochkin, Yu.A.; Stavkin, D.G.

    1996-01-01

    The method of thin solid films (Ni, Cu, Al, Pd, Si, InSb, Ta 2 O 5 ) formation on different substrates (Cu, Fe, Si, SiO 2 , Ta 2 O 5 , carbon, glass, mica, teflon) with higher adhesion strength (∼ 10 7 Pa) without preliminary treatment of substrate surface was discribed. The method is based on laser evaporation of solid in vacuum. Adhesion was measured by means of a direct pull technique using a pin soldered to buffer film evaporated by laser on the investigated film. Possible reasons for higher adhesion of films fabricated by laser deposition were discussed. 10 refs.; 3 figs

  7. Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

    Science.gov (United States)

    Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

    2018-04-01

    The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

  8. Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films.

    Science.gov (United States)

    Wang, Xuewen; He, Xuexia; Zhu, Hongfei; Sun, Linfeng; Fu, Wei; Wang, Xingli; Hoong, Lai Chee; Wang, Hong; Zeng, Qingsheng; Zhao, Wu; Wei, Jun; Jin, Zhong; Shen, Zexiang; Liu, Jie; Zhang, Ting; Liu, Zheng

    2016-07-01

    Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d 33) up to 33 pm·V(-1) was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices.

  9. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  10. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  11. Photoluminescence and electrical properties of polyvinyl alcohol films doped with CdS nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Z.I.; Hosni, H.M.; Saleh, H.H.; Ghazy, O.A. [Atomic Energy Authority, National Center for Radiation Research and Technology, P.O. Box 29, Nasr City, Cairo (Egypt)

    2016-05-15

    In situ preparation of polyvinyl alcohol (PVA) films doped with cadmium sulfide (CdS) nanoparticles was conducted by gamma radiation. The films were characterized in terms of photoluminescence and electrical conductivity. The photoluminescence results indicated the existence of two emission peaks around 470 and 530 nm, which are due to electron-hole recombination of CdS nanoparticles and surface trapped emission due to the PVA capping, respectively. DC electrical conductivity (σ {sub DC}) measurement in the temperature range from 303 up to 373 K reveals an increase in its value with increasing both Cd{sup 2+} ion molar concentration and irradiation dose. AC electrical conductivity (σ {sub AC}) measurement over the same temperature range at an applied field frequency of 10, 100, 500 and 1000 kHz shows an increase behavior with increasing temperature, frequency, Cd{sup 2+} ion molar concentration and irradiation dose. Dielectric constant (ε {sub 1}) exhibits an increase with temperature, whereas it shows reduced values with increasing frequency, Cd{sup 2+} ion molar concentration and irradiation dose. Also, the dielectric loss tangent (tan δ) follows an increasing trend with increasing temperature, Cd{sup 2+} ion molar concentration and irradiation dose while it has an opposite trend with increasing frequency. The CdS/PVA nanocomposite films behavior could be explained on the basis of formation of charge-transfer complexes (CTCs) by the CdS nanoparticles doped into the PVA matrix and the role of radiation in enhancing the charge carrier mobility of such CTCs. (orig.)

  12. Electrophoretic deposition of CdS coatings and their photocatalytic activities in the degradation of tetracycline antibiotic

    Energy Technology Data Exchange (ETDEWEB)

    Vázquez, A., E-mail: alejandro.lqi@gmail.com [Universidad Autónoma de Nuevo León, Facultad de Ciencias Químicas, Av. Universidad S/N, San Nicolás de los Garza, 66455 Nuevo León (Mexico); Hernández-Uresti, D.B., E-mail: ing.dianahdz@gmail.com [Universidad Autónoma de Nuevo León, CICFIM–Facultad de Ciencias Físico Matemáticas, Av. Universidad S/N, San Nicolás de los Garza, 66455 Nuevo León (Mexico); Obregón, S. [Universidad Autónoma de Nuevo León, CICFIM–Facultad de Ciencias Físico Matemáticas, Av. Universidad S/N, San Nicolás de los Garza, 66455 Nuevo León (Mexico)

    2016-11-15

    Highlights: • CdS photocatalyst was prepared by electrophoretic deposition. • The CdS coating was used in the photodegradation of antibiotics. • O{sub 2}{sup −} and ·OH radicals were responsible for the degradation of tetracycline. - Abstract: The photocatalytic activities of CdS coatings formed by electrophoretic deposition (EPD) were evaluated through the photodegradation of an antibiotic, tetracycline. First, CdS nanoparticles were synthesized under microwave irradiation of aqueous solutions containing the cadmium and sulfur precursors at stoichiometric amounts and by using trisodium citrate as stabilizer. Microwave irradiation was carried out in a conventional microwave oven at 2.45 GHz and 1650 W of nominal power, for 60 s. The CdS nanoparticles were characterized by UV–vis spectrophotometry, photoluminescence and X-ray diffraction. Electrophoretic deposition parameters were 300 mV, 600 mV and 900 mV of applied voltage between aluminum plates separated by 1 cm. The fractal dimensions of the surfaces were evaluated by atomic force microscopy and correlated to the morphological and topographic characteristics of the coatings. The photocatalytic activity of the CdS coatings was investigated by means the photodegradation of the tetracycline antibiotic under simulated sunlight irradiation. According to the results, the photoactivity of the coatings directly depends on the concentration of the precursors and the applied voltage during the deposition. The material obtained at 600 mV showed the best photocatalytic behavior, probably due to its physical properties, such as optimum load and suitable aggregate size.

  13. Electrophoretic deposition of CdS coatings and their photocatalytic activities in the degradation of tetracycline antibiotic

    International Nuclear Information System (INIS)

    Vázquez, A.; Hernández-Uresti, D.B.; Obregón, S.

    2016-01-01

    Highlights: • CdS photocatalyst was prepared by electrophoretic deposition. • The CdS coating was used in the photodegradation of antibiotics. • O 2 − and ·OH radicals were responsible for the degradation of tetracycline. - Abstract: The photocatalytic activities of CdS coatings formed by electrophoretic deposition (EPD) were evaluated through the photodegradation of an antibiotic, tetracycline. First, CdS nanoparticles were synthesized under microwave irradiation of aqueous solutions containing the cadmium and sulfur precursors at stoichiometric amounts and by using trisodium citrate as stabilizer. Microwave irradiation was carried out in a conventional microwave oven at 2.45 GHz and 1650 W of nominal power, for 60 s. The CdS nanoparticles were characterized by UV–vis spectrophotometry, photoluminescence and X-ray diffraction. Electrophoretic deposition parameters were 300 mV, 600 mV and 900 mV of applied voltage between aluminum plates separated by 1 cm. The fractal dimensions of the surfaces were evaluated by atomic force microscopy and correlated to the morphological and topographic characteristics of the coatings. The photocatalytic activity of the CdS coatings was investigated by means the photodegradation of the tetracycline antibiotic under simulated sunlight irradiation. According to the results, the photoactivity of the coatings directly depends on the concentration of the precursors and the applied voltage during the deposition. The material obtained at 600 mV showed the best photocatalytic behavior, probably due to its physical properties, such as optimum load and suitable aggregate size.

  14. Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

    Directory of Open Access Journals (Sweden)

    M. R. Balboul

    2016-01-01

    Full Text Available Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

  15. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  16. Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

    Directory of Open Access Journals (Sweden)

    Vidya S. Taur

    2012-01-01

    Full Text Available The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX confirms expected elemental composition in thin films. Scanning electron microscopy (SEM images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained. I-V response obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2 light source.

  17. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  18. Co+ -ion implantation induced doping of nanocrystalline CdS thin films: structural, optical, and vibrational properties

    International Nuclear Information System (INIS)

    Chandramohan, S.; Sarangi, S.N.; Majumder, S.; Som, T.; Kanjilal, A.; Sathyamoorthy, R.

    2009-01-01

    Full text: Transition metal (Mn, Fe, Co and Ni) doped CdS nanostructures and nanocrystalline thin films have attracted much attention due to their anticipated applications in magneto-optical, non-volatile memory and future spintronics devices. Introduction of impurities in substitutional positions is highly desirable for such applications. Ion implantation is known to provide many advantages over conventional methods for efficient doping and possibility of its seamless integration with device processing steps. It is not governed by equilibrium thermodynamics and offers the advantages of high spatial selectivity and to overcome the solubility limits. In this communication, we report on modifications of structural morphological, optical, and vibrational properties of 90 keV Co + -ion implanted CdS thin films grown by thermal evaporation. Co + -ion implantation was performed in the fluence range of 0.1-3.6x10 16 ions cm -2 These fluences correspond to Co concentration in the range of 0.34-10.8 at % at the peak position of profile. Implantation was done at an elevated temperature of 573 K in order to avoid amorphization and to enhance the solubility of Co ions in the CdS lattice. Films were characterized by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), optical absorption, and micro-Raman spectroscopy. Implantation does not lead to any secondary phase formation either in the form of impurity or the metallic clusters. However, implantation improves the crystalline quality of the samples and leads to supersaturation of Co ions in the CdS lattice. Thus, nanocrystalline CdS thin films can be considered as a good radiation- resistant material, which can be employed for prolonged use in solar cells for space applications. The optical band gap is found to decrease systematically with increasing ion fluence from 2.39 to 2.28 eV. Implantation leads to agglomeration of grains and a systematic increase in the surface roughness. Both GAXRD and micro

  19. Growth and characterization of CdS buffer layers by CBD and MOCVD

    International Nuclear Information System (INIS)

    Morrone, A.A.; Huang, C.; Li, S.S.

    1999-01-01

    Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,ampersand h;Ga)Se 2 (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature (∼150 and h;degree C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigations of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. copyright 1999 American Institute of Physics

  20. Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Novruzov, V.D. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Keskenler, E.F., E-mail: keskenler@gmail.com [Department of Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize (Turkey); Tomakin, M. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Kahraman, S. [Department of Physics, Mustafa Kemal University, Hatay (Turkey); Gorur, O. [Department of Physics, Abant Izzet Baysal University, Bolu (Turkey)

    2013-09-01

    Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu{sub 2}S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

  1. Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

    Science.gov (United States)

    Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.

    2013-09-01

    Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

  2. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  3. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  4. Synthesis of CdS nanocrystals in polymeric films studied by in-situ GID and GISAXS

    KAUST Repository

    Di Luccio, Tiziana

    2015-07-07

    In this work, we describe the synthesis of CdS nanocrystals in thin polymeric films by in-situ Grazing Incidence Diffraction (GID) and Grazing Incidence Small Angle Scattering (GISAXS). The 2D GISAXS patterns indicate how the precursor structure is altered as the temperature is varied from 25°C to 300°C. At 150°C, the CdS nanocrystals start to arrange themselves in a hexagonal lattice with a lattice parameter of 27 A. The diffraction intensity from the hexagonal lattice reaches a maximum at 170"C and decreases steadily upon further heating above 220°C indicating loss of symmetry. Correspondingly, the GID scans at 170°C show strong crystalline peaks from cubic CdS nanocrystals that are about 2 nm size. The results indicate that a temperature of 170°C is sufficient to synthesize CdS nanocrystals without degradation of the polymer matrix (Topas) in thin films (about 30nm). © 2015 Materials Research Society.

  5. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  6. Fabrication and photoelectrochemical characteristics of the patterned CdS microarrays on indium tin oxide substrates.

    Science.gov (United States)

    Meng, Xu; Lu, Yongjuan; Yang, Baoping; Yi, Gewen; Jia, Junhong

    2010-12-01

    In an effort to investigate the extraordinary photoelectrochemical characteristics of nanostructured CdS thin films in promising photovoltaic device applications, the patterned CdS microarrays with different feature sizes (50, 130, and 250 μm in diameter) were successfully fabricated on indium tin oxide (ITO) glass substrates using the chemical bath deposition method. The ultraviolet lithography process was employed for fabricating patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) as the functional organic thin layer template. The results show that the regular and compact patterned CdS microarrays had been deposited onto ITO glass surfaces, with clear edges demarcating the boundaries between the patterned CdS region and substrate under an optimal depositing condition. The microarrays consisted of pure nanocrystalline CdS with average crystallite size of about 10.7 nm. The photocurrent response and the optical adsorption of the patterned CdS microarray thin films increased with the decrease of the feature size, which was due to the increased CdS surface area, as well as the increased optical path length within the patterned CdS thin films, resulting from multiple reflection of incident light. The resistivity values increase with the increase of feature size, due to the increase of the relative amount of gaps between CdS microarrays with increasing the feature size of patterned CdS microarrays.

  7. Chemical vapor deposition of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

    2008-01-01

    The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

  8. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, K.C., E-mail: wilsonphy@gmail.com [Department of Physics, Govt. Polytechnic College Kothamangalam, Chelad P O, Ernakulam, Kerala 686681 (India); Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India); Basheer Ahamed, M. [Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India)

    2016-01-15

    Graphical abstract: - Highlights: • Novel honey comb like cadmium sulfide thin film nanostructures prepared using chemical bath deposition on glass substrates. • Honey comb nanostructure found in two layers: an ultra thin film at bottom and well inter connected with walls of < 25 nm thick on top; hence maximum surface area possible for CdS nanostructure. • Shell size of the nanostructures and energy band gaps were controlled also an enhanced persistent conductivity observed on Sn doping. - Abstract: Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like “plum pudding”. Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  9. Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

    Directory of Open Access Journals (Sweden)

    Obi Kingsley Echendu

    2017-01-01

    Full Text Available Electrochemical deposition and characterization of nanocrystallite-CdS thin films for thin film solar cell application are reported. The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. X-ray diffraction study reveals that the as-deposited films contain mixed phases of hexagonal and cubic CdS crystallites with large amounts of internal strain and dislocation density. Postdeposition annealing results in phase transformation which leaves the films with only the hexagonal crystal phase and reduced strain and dislocation density while increasing the crystallite sizes from 21.0–42.0 nm to 31.2–63.0 nm. Photoelectrochemical cell study shows that all the CdS films have n-type electrical conductivity. Optical characterization reveals that all samples show similar transmittance and absorbance responses with the transmittance slightly increasing towards higher growth voltages. All the annealed films show energy bandgap of 2.42 eV. Scanning electron microscopy and energy dispersive X-ray analyses show that grains on the surface of the films tend to get cemented together after annealing with prior CdCl2 treatment while all the films are S-rich.

  10. Fluorinated Graphene Enables the Growth of Inorganic Thin Films by Chemical Bath Deposition on Otherwise Inert Substrates.

    Science.gov (United States)

    Lee, Woo-Kyung; Hernández, Sandra C; Robinson, Jeremy T; Walton, Scott G; Sheehan, Paul E

    2017-01-11

    Chemically modified graphenes (CMGs) offer a means to tune a wide variety of graphene's exceptional properties. Critically, CMGs can be transferred onto a variety of substrates, thereby imparting functionalities to those substrates that would not be obtainable through conventional functionalization. One such application of CMGs is enabling and controlling the subsequent growth of inorganic thin films. In the current study, we demonstrated that CMGs enhance the growth of inorganic films on inert surfaces with poor growth properties. Fluorinated graphene transferred onto polyethylene enabled the dense and homogeneous deposition of a cadmium sulfide (CdS) film grown via chemical bath deposition. We showed that the coverage of the CdS film can be controlled by the degree of fluorination from less than 20% to complete coverage of the film. The approach can also be applied to other technologically important materials such as ZnO. Finally, we demonstrated that electron beam-generated plasma in a SF 6 -containing background could pattern fluorine onto a graphene/PE sample to selectively grow CdS films on the fluorinated region. Therefore, CMG coatings can tailor the surface properties of polymers and control the growth of inorganic thin films on polymers for the development of flexible electronics.

  11. Chemically deposited TiO2/CdS bilayer system for ...

    Indian Academy of Sciences (India)

    TiO2/CdS bilayer; chemical methods; PEC performance. 1. Introduction. In the present day scenario, solar energy is playing a high- ... semiconducting materials have been considered as promising sensitizers to enhance the utilization of sunlight for energy production in photovoltaic (PV) devices (Plass et al 2002;. Sant and ...

  12. Ultrashort pulse laser deposition of thin films

    Science.gov (United States)

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  13. Electrostatic spray deposition of doped ceria films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, J.B.; Chang, C.L.; Hwang, B.H. [Department of Materials Science and Optoelectronics Engineering, National Sun Yat-Sen University, Kaohsiung 80424 (China); Hsu, C.S. [Kaohsiung Municipal Chung-Cheng Industrial High School, Kaohsiung 80656 (China)

    2010-12-15

    Dense and thin electrolyte films are desirable for solid oxide fuel cells (SOFCs) because of their low gas leakage and low ohmic resistances. This work aims at the preparation of thin dense Gd-doped ceria (CGO) electrolyte films using a cost-effective deposition method in ambient atmosphere-electrostatic spray deposition (ESD). The deposition parameters such as deposition temperature, concentration and flow rate of precursor solution were changed systematically to examine their effects on film morphology and hence electrochemical performance. While the film morphology was examined by a scanning electron microscope, the electrochemical performance was revealed by measuring open circuit voltages (OCVs) of NiO-CGO/CGO/Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} (BSCF) cells in 500-700 C with humidified hydrogen as fuel and air as oxidant. The results show that a CGO film of 25 {mu}m thick obtained at a deposition temperature of 400 C, a precursor solution flow rate of 6 ml h{sup -1} and a precursor concentration of 0.3 M was dense with very few isolated pores and the OCV of the associated cell was 0.915 V at 500 C. This implies that the CGO film has negligible gas leakage and ESD is a promising method for preparing thin dense electrolyte films for SOFCs. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Sulfur ion concentration dependent morphological evolution of CdS thin films and its subsequent effect on photo-electrochemical performance.

    Science.gov (United States)

    Kamble, Archana; Sinha, Bhavesh; Agawane, Ganesh; Vanalakar, Sharad; Kim, In Young; Kim, Jin Young; Kale, Sampat S; Patil, Pramod; Kim, Jin Hyeok

    2016-10-12

    The sulfur ion concentration dependent morphological evolution and its subsequent effect on photo-electrochemical properties of chemically synthesized CdS thin films have been systematically investigated. The plausible growth mechanism for the morphological evolution of CdS thin films due to a change in sulfur ion concentration has been proposed. Scanning electron micrographs (SEMs) reveal that the morphology of CdS thin films has been changed from spherical grains to vertically aligned nanoflakes by systematic control of sulfur ion concentration. This article elucidates the astute relationships between precursor concentrations, reaction rate and morphological evolution. The X-ray diffraction (XRD) patterns reveal the formation of hexagonal wurtzite CdS thin films with the preferred (002) orientation for CdS nanoflakes, which is further supported by the analysis of the high resolution transmission electron micrographs (HRTEMs). Optical absorption studies show a red shift in the absorption edge with an increase in sulfur concentration. The beneficial role of nanoflake formation is easily reflected in the photo-electrochemical performance. Improved solar cell performances are observed for CdS nanoflakes grown with a sulfur to cadmium ion concentration ratio of 4 (S : Cd = 4).

  15. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  16. Room temperature deposition of zinc oxide thin films by rf-magnetron sputtering for application in solar cells

    Science.gov (United States)

    Sanal, K. C.; Trujillo, R. R.; Nair, P. K.; Nair, M. T. S.

    2016-09-01

    Recent reports indicate that thin films of oxides of zinc: ZnO, Zn(O,S), or Zn-Mg-O, could be a better buffer component than CdS to provide an adequate band alignment with orthorhombic tin sulphide in thin lm solar cells. Thin films of ZnO were grown by rf-magnetron sputtering on different substrates at room temperature. Thin films of ZnO obtained by different deposition methods show hexagonal crystal structure, usually with a preferential orientation of (002) crystallographic planes parallel to the substrate surface. However, in the present study XRD patterns indicate that thicker ZnO films on glass substrates have preferential growth of (103) planes, while that on chemically deposited CdS or ZnS films preferential orientation of (002) planes persists. Bandgap of ZnO films increases from 3.2 eV to 3.4 eV when the chamber pressure used for deposition varies from 2.3 mTorr to 6 mTorr. ZnO films were incorporated in a solar cell structure stainless steel/SnS(cubic)/SnS(orthorhombic)/SnS(cubic)/CdS/ZnO/ZnO:Al. It showed open-circuit voltage of 0.318 V, short-circuit current density of 3.6 mA/cm2 and conversion efficiency of 0.82%.

  17. Use of CdS quantum dot-functionalized cellulose nanocrystal films for anti-counterfeiting applications

    Science.gov (United States)

    Chen, L.; Lai, C.; Marchewka, R.; Berry, R. M.; Tam, K. C.

    2016-07-01

    Structural colors and photoluminescence have been widely used for anti-counterfeiting and security applications. We report for the first time the use of CdS quantum dot (QD)-functionalized cellulose nanocrystals (CNCs) as building blocks to fabricate nanothin films via layer-by-layer (LBL) self-assembly for anti-counterfeiting applications. Both negatively- and positively-charged CNC/QD nanohybrids with a high colloidal stability and a narrow particle size distribution were prepared. The controllable LBL coating process was characterized by scanning electron microscopy and ellipsometry. The rigid structure of CNCs leads to nanoporous structured films on poly(ethylene terephthalate) (PET) substrates with high transmittance (above 70%) over the entire range of visible light and also resulted in increased hydrophilicity (contact angles of ~40 degrees). Nanothin films on PET substrates showed good flexibility and enhanced stability in both water and ethanol. The modified PET films with structural colors from thin-film interference and photoluminescence from QDs can be used in anti-counterfeiting applications.Structural colors and photoluminescence have been widely used for anti-counterfeiting and security applications. We report for the first time the use of CdS quantum dot (QD)-functionalized cellulose nanocrystals (CNCs) as building blocks to fabricate nanothin films via layer-by-layer (LBL) self-assembly for anti-counterfeiting applications. Both negatively- and positively-charged CNC/QD nanohybrids with a high colloidal stability and a narrow particle size distribution were prepared. The controllable LBL coating process was characterized by scanning electron microscopy and ellipsometry. The rigid structure of CNCs leads to nanoporous structured films on poly(ethylene terephthalate) (PET) substrates with high transmittance (above 70%) over the entire range of visible light and also resulted in increased hydrophilicity (contact angles of ~40 degrees). Nanothin films

  18. Charge transport and localization in nanocrystalline CdS films: A time-resolved terahertz spectroscopy study

    Czech Academy of Sciences Publication Activity Database

    Mics, Zoltan; Němec, Hynek; Rychetský, Ivan; Kužel, Petr; Formánek, P.; Malý, P.; Němec, P.

    2011-01-01

    Roč. 83, č. 15 (2011), "155326-1"-"155326-6" ISSN 1098-0121 R&D Projects: GA ČR GD202/09/H041; GA ČR(CZ) GP202/09/P099; GA ČR GA202/09/0430; GA MŠk LC512; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100520 Keywords : time-resolved THz spectroscopy * CdS nanoparticles * electron transport * chemical bath deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  19. Surface vertical deposition for gold nanoparticle film

    International Nuclear Information System (INIS)

    Diao, J J; Qiu, F S; Chen, G D; Reeves, M E

    2003-01-01

    In this rapid communication, we present the surface vertical deposition (SVD) method to synthesize the gold nanoparticle films. Under conditions where the surface of the gold nanoparticle suspension descends slowly by evaporation, the gold nanoparticles in the solid-liquid-gas junction of the suspension aggregate together on the substrate by the force of solid and liquid interface. When the surface properties of the substrate and colloidal nanoparticle suspension define for the SVD, the density of gold nanoparticles in the thin film made by SVD only depends on the descending velocity of the suspension surface and on the concentration of the gold nanoparticle suspension. (rapid communication)

  20. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  1. Substrate heater for thin film deposition

    Science.gov (United States)

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  2. Deposition of biopolymer films on micromechanical sensors

    DEFF Research Database (Denmark)

    Keller, Stephan Sylvest; Gammelgaard, Lene; Jensen, Marie P.

    2011-01-01

    The influence of various parameters on the spray-coating of thin films of poly(l-lactide) (PLLA) was investigated. The optimized processing conditions were used for deposition of the biodegradable polymer on arrays of SU-8 microcantilevers. The resonance frequency of the cantilevers before and af...... and after spray-coating was measured which allowed the characterization of the mechanical properties of the coatings. Initial experiments on enzymatic degradation of the PLLA were performed.......The influence of various parameters on the spray-coating of thin films of poly(l-lactide) (PLLA) was investigated. The optimized processing conditions were used for deposition of the biodegradable polymer on arrays of SU-8 microcantilevers. The resonance frequency of the cantilevers before...

  3. Atomic Layer Deposition of CdS Quantum Dots for Solid-State Quantum Dot Sensitized Solar Cells

    KAUST Repository

    Brennan, Thomas P.

    2011-10-04

    Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO 2, we are able to grow QDs of adjustable size which act as sensitizers for solid-state QDsensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1-10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2\\',7,7\\'-tetrakis-(N,N-di-p methoxyphenylamine) 9,9\\'-spirobifluorene (spiro-OMeTAD) as the solid-state hole conductor. The ALD approach described here can be applied to fabrication of quantum-confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Photocatalytic degradation of metronidazole and methylene blue by PVA-assisted Bi2WO6-CdS nanocomposite film under visible light irradiation

    Science.gov (United States)

    Rajendran, Ranjith; Varadharajan, Krishnakumar; Jayaraman, Venkatesan; Singaram, Boobas; Jeyaram, Jayaprakash

    2018-02-01

    The enhanced photocatalytic performance of nanocomposite is synthesized via the hydrothermal method and characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FT-IR), UV-visible diffuse reflectance spectroscopy (UV-Vis DRS) and photoluminescence spectroscopy (PL). Under visible light irradiation, PVA assisted Bi2WO6-CdS nanocomposite film displayed enhanced photocatalytic efficiency and inhibition of photocorrosion as compared with pure CdS, pure Bi2WO6 and Bi2WO6-CdS composite. The PVA assisted Bi2WO6-CdS composite film catalyst showed stable catalytic performance until seven successive runs with 92% of methylene blue(MB) degradation, and easy to recover after degradation of organic pollutant. PVA assisted Bi2WO6-CdS nanocomposite film has optimal band edge position for superior photocatalytic degradation. Furthermore, the trapping experiment was carried out using different scavenger for active species. Among the active species, OH· are the most responsive species which play a vital role in the degradation of metronidazole and MB.

  5. Ion-assisted deposition of thin films

    International Nuclear Information System (INIS)

    Barnett, S.A.; Choi, C.H.; Kaspi, R.; Millunchick, J.M.

    1993-01-01

    Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the recent interest in this area has been centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity device-quality semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism during heteroepitaxial growth

  6. Deposition and characterization of (Cd sub(x) Zn sub(1-x)) S thin films

    International Nuclear Information System (INIS)

    Ferreira, C.L.

    1984-01-01

    Thin films of (Cd sub(x) Zn sub(1-x)) S were deposited on the substrates of soda-lime glass and borosilicate glass by coevaporation of CdS and ZnS, using the technique of hot wall. The temperatures for substrate (200 0 C), wall (350 0 C), CdS source (900 0 -1000 0 C) and ZnS source (900 0 -1200 0 C) were found to be optimum for formation of the films with deposition rates in the range of 0.5 μm.min -1 . The films obtained were with Wurtzite structure, with the crystallographic planes oriented in (001) direction. A linear variation of the parameter C 0 of hexagonal lattice with the concentration of Zn, in the range of 20% to 60%, was observed. For lower and higher concentration outside this range there was a tendency of saturation of C 0 . Measurements of Hall voltage and resistivity demonstrated the mobility and carrier concentration in the range of 10-40 cm 2 v -1 sec -1 and 1.45 x 10 19 - 3.83 x 10 20 cm -3 , respectively, whereas the resistivity of the films ranged from 2.11 x 10 -2 Ω.cm for the Zn concentration variation from 20% to 70%. Measurements of optical absorption revealed linear variation of refractive index of the films with Zn concentration for the wavelenght in the range of 0.5 to 2.0 μm. (Cd sub(x) Zn sub(1-x)) S films with 0.7 2 S. (Author) [pt

  7. High transmittance cadmium oxysulfide Cd(S,O) buffer layer grown by triton X-100 mediated chemical bath deposition for thin-film heterojunction solar cells

    Science.gov (United States)

    Ballipinar, Faruk; Rastogi, A. C.

    2017-01-01

    Polycrystalline 100-190 nm Cd(S,O) n-type semiconductor thin films of high transparency in the visible range are deposited by a surfactant Triton X-100 mediated chemical bath deposition process. The crystalline structure of the films revealed by X-ray diffraction data shows a cubic-CdO phase signified by (111) and (200) planes alongside the (002), (220), and (110) planes from hexagonal-CdS. The invariance of the 2θ position of the (002) CdS diffraction is interpreted in terms of the growth of the composite film essentially by the formation of a dilute interstitial alloy of CdO and CdS. This is confirmed by Raman spectra which, besides the CdS 1LO and 2LO modes at 300 and 600 cm-1, also show Raman lines from CdO at 1098 cm-1 and 952 cm-1 assigned as overtone of 2LO phonon modes and 556 cm-1 due to band crossing between LO and TO modes of CdO. Optical spectra of Cd(S,O) films show a median transmittance of >85% compared to ˜70% for CdS films in the 550-1000 nm wavelength range. The Cd(S,O) films show optical bandgap varying from 2.34 to 2.26 eV with increasing CdO fraction but retain high sub-bandgap transmission and sharp band edge threshold. The Cd(S,O) films thus offer an alternative to the CdS buffer layer in the heterojunction solar cells, which has major shortcoming of poor stability and high sub-bandgap absorption. The photoluminescence spectra of Cd(S,O) films show three green bands, of which one is the near band edge transition at 511.5 nm, the same as in CdS, the second band at 526.0 nm that red shifted from the CdS position is due to shallow donor-acceptor defects arising from structural change due to CdO, and the third band at 543.6 nm (2.28 eV) originates from direct band transition in CdO. The growth mechanism of Cd(S,O) films is described, which invokes that the Triton X-100 molecule modifies the microenvironment around adsorbed [Cd(NH3)4]2+ species, thereby inducing two concurrent reactions, one with SH- species that cause CdS formation and the

  8. CdS and ZnS quantum dots embedded in hyaluronic acid films

    Energy Technology Data Exchange (ETDEWEB)

    Khachatryan, G.; Khachatryan, K. [Department of Chemistry, Agricultural University, Balicka 122, 30-149 Krakow (Poland); Stobinski, L. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 48/52, 01-224 Warsaw (Poland); Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warszawa (Poland)], E-mail: lstob@ichf.edu.pl; Tomasik, P.; Fiedorowicz, M. [Department of Chemistry, Agricultural University, Balicka 122, 30-149 Krakow (Poland); Lin, H.M. [Department of Materials Engineering, Tatung University, Taipei 104, Taiwan, ROC (China)

    2009-07-29

    An in situ synthesis of ZnS and CdS quantum dots (QDs) in an aqueous solution of sodium hyaluronate (Hyal) produced foils emitting light on excitation with a UV light. The wavelength of emission was only slightly QDs size and more QDs concentration dependent and reached up to {approx}320 nm in the case of ZnS and {approx}400-450 nm in the case of CdS. Nanoparticles remained as non-agglomerated 10-20 nm nanoclusters. CdS/Hyal and ZnS/Hyal-QDs biocomposites were characterized using photoluminescence (PL), IR spectrometric techniques, and Transmission Electron Microscopy (TEM). The absolute molecular weights, radii of gyration, R{sub g}, and thermodynamic properties of the obtained foils are given. Electric resistivity studies performed for the hyaluronic foil in the 100-1000 V range have revealed that the hyaluronate foil has very weak conducting properties and QDs only insignificantly affect those properties as QDs practically did not interact with the foil. Size exclusion chromatography showed a decrease in the molecular weight of the hyaluronate after generation of QDs in its solution, particularly in the lower molecular fraction of the hyaluronate. The generation of CdS QDs was more destructive for the polysaccharide matrix.

  9. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  10. Chemically deposited TiO2/CdS bilayer system for ...

    Indian Academy of Sciences (India)

    ods for large scale uniform coating to persuade clean, dense and strong adhesion to substrate thin films (Hodes 2002). In order to alleviate reaction conditions, environmental impact and decrease the economic cost, synthesis of this material through soft chemical solution method would be a priority if the properties of the ...

  11. Improved growth of solution-deposited thin films on polycrystalline Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565, Stuttgart (Germany); Abou-Ras, Daniel [Helmholtz-Zentrum Berlin fuer Materialien und Energie, 14109, Berlin (Germany)

    2016-04-15

    CdS and Zn(O,S) grown by chemical bath deposition (CBD) are well established buffer materials for Cu(In,Ga)Se{sub 2} (CIGS) solar cells. As recently reported, a non-contiguous coverage of CBD buffers on CIGS grains with {112} surfaces can be detected, which was explained in terms of low surface energies of the {112} facets, leading to deteriorated wetting of the chemical solution on the CIGS surface. In the present contribution, we report on the effect of air annealing of CIGS thin films prior to the CBD of CdS and Zn(O,S) layers. In contrast to the growth on the as-grown CIGS layers, these buffer lay- ers grow densely on the annealed CIGS layer, even on grains with {112} surfaces. We explain the different growth behavior by increased surface energies of CIGS grains due to the annealing step, i.e., due to oxidation of the CIGS surface. Reference solar cells were processed and completed by i-ZnO/ZnO:Al layers for CdS and by (Zn,Mg)O/ZnO:Al for Zn(O,S) buffers. For solar cells with both, CdS and Zn(O,S) buffers, air-annealed CIGS films with improved buffer coverage resulted in higher power-conversion efficiencies, as compared with the devices containing as-grown CIGS layers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Stress in and texture of PVD deposited metal nitride films

    NARCIS (Netherlands)

    Machunze, R.

    2010-01-01

    Thin metal nitride films deposited by Physical Vapor Deposition (PVD) are used amongst many other applications as wear protective coatings in tool industry or as diffusion barriers in integrated circuit technology. Typically these films exhibit a residual in-plane stress when deposited onto rigid

  13. Direct electron transfer of hemoglobin in a CdS nanorods and Nafion composite film on carbon ionic liquid electrode

    International Nuclear Information System (INIS)

    Sun Wei; Wang Dandan; Li Guicun; Zhai Ziqin; Zhao Ruijun; Jiao Kui

    2008-01-01

    In this paper the direct electron transfer of hemoglobin (Hb) was carefully investigated by using a room temperature ionic liquid 1-butyl-3-methylimidazolium hexafluorophosphate (BMIMPF 6 ) modified carbon paste electrode (CILE) as the basal working electrode. Hb was immobilized on the surface of CILE with the nanocomposite film composed of Nafion and CdS nanorods by a step-by-step method. UV-vis and FT-IR spectra showed that Hb in the composite film remained its native structure. The direct electrochemical behaviors of Hb in the composite film were further studied in a pH 7.0 phosphate buffer solution (PBS). A pair of well-defined and quasi-reversible cyclic voltammetric peaks of Hb was obtained with the formal potential (E 0 ') at -0.295 V (vs. SCE), which was the characteristic of heme Fe(III)/Fe(II) redox couples. The direct electrochemistry of Hb was achieved on the modified electrode and the apparent heterogeneous electron transfer rate constant (k s ) was calculated to be 0.291 s -1 . The formal potentials of Hb Fe(III)/Fe(II) couple shifted negatively with the increase of buffer pH and a slope value of -45.1 mV/pH was got, which indicated that one electron transfer accompanied with one proton transportation. The fabricated Hb sensor showed good electrocatalytic manner to the reduction of trichloroacetic acid (TCA)

  14. Comparative study on structural and optical properties of CdS films fabricated by three different low-cost techniques

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K. [P.G. and Research Department of Physics, AVVM. Sri Pushpam College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)], E-mail: kkr1365@yahoo.com; Philominathan, P. [P.G. and Research Department of Physics, AVVM. Sri Pushpam College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-03-15

    Highly crystalline and transparent cadmium sulphide films were fabricated at relatively low temperature by employing an inexpensive, simplified spray technique using perfume atomizer (generally used for cosmetics). The structural, surface morphological and optical properties of the films were studied and compared with that prepared by conventional spray pyrolysis using air as carrier gas and chemical bath deposition. The films deposited by the simplified spray have preferred orientation along (1 0 1) plane. The lattice parameters were calculated as a = 4.138 A and c = 6.718 A which are well agreed with that obtained from the other two techniques and also with the standard data. The optical transmittance in the visible range and the optical band gap were found as 85% and 2.43 eV, respectively. The structural and optical properties of the films fabricated by the simplified spray are found to be desirable for opto-electronic applications.

  15. Synthesis and optical properties of CdS quantum dots embedded in silica matrix thin films and their applications as luminescent solar concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Reda, S.M. [Chemistry Department, Faculty of Science, Benha University, Benha (Egypt)], E-mail: safenazr@yahoo.com

    2008-01-15

    CdS quantum dot (QD) solar concentrators were prepared by a sol-gel spin coating method. Thin films were prepared at different annealing temperatures and characterized by X-ray diffraction and spectroscopic techniques. The effect of temperature on the optical properties of CdS QDs embedded in silica matrix was assessed before and after exposure of the samples to sunlight for up to 4 weeks. The results show that as the annealing temperature increases, the fluorescent intensity and Stokes shift decrease. Therefore lower temperatures are preferable for the preparation of highly efficient QD solar concentrator systems.

  16. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  17. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  18. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; Gellings, P.J.; van de Vendel, D.; Metselaar, H.S.C.; van Corbach, H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical

  19. Synthesis of nanocrystalline CdS thin films in PVA matrix

    Indian Academy of Sciences (India)

    TECS

    The band gap of the nanocrystalline material is determined from the UV spectrograph. The absorption edge is shifted towards the lower wave length side (i.e. blue ... In recent years nanocrystalline thin films of different II–VI compound semiconductors have been widely synthesized and studied. Nanocrystalline thin films are ...

  20. Thin-film deposition by laser ablation of dimethylpolysiloxane

    Energy Technology Data Exchange (ETDEWEB)

    Okoshi, Masayuki; Kuramatsu, Masaaki; Inoue, Narumi

    2002-09-30

    Transparent, well-insulated SiO{sub 2} thin films were deposited at room temperature by pulsed laser deposition with a dimethylpolysiloxane target. It could be asserted with confidence that the films deposited at the oxygen gas pressure of 4.4x10{sup -2} Torr were to be SiO{sub 2} by X-ray photoelectron spectroscopy (XPS). The XPS analyseso supported that carbon ejected from the target and background oxygen gas interacted to form a carbon-free SiO{sub 2} film, though a polymer target was used. However, an excessive oxygen gas pressure such as 4.4x10{sup -1} Torr caused to roughen the surface of the deposited films. Lowering the deposition rate helped to make a dense film and to improve electrical resistivity of the films up to 10{sup 9} {omega}m.

  1. Deposition and characterization of ZnSe nanocrystalline thin films

    Science.gov (United States)

    Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

    2018-02-01

    ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

  2. Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

    International Nuclear Information System (INIS)

    Avellaneda, David; Delgado, Guadalupe; Nair, M.T.S.; Nair, P.K.

    2007-01-01

    Chemically deposited SnS thin films possess p-type electrical conductivity. We report a photovoltaic structure: SnO 2 :F-CdS-SnS-(CuS)-silver print, with V oc > 300 mV and J sc up to 5 mA/cm 2 under 850 W/m 2 tungsten halogen illumination. Here, SnO 2 :F is a commercial spray-CVD (Pilkington TEC-8) coating, and the rest deposited from different chemical baths: CdS (80 nm) at 333 K, SnS (450 nm) and CuS (80 nm) at 293-303 K. The structure may be heated in nitrogen at 573 K, before applying the silver print. The photovoltaic behavior of the structure varies with heating: V oc ∼ 400 mV and J sc 2 , when heated at 423 K in air, but V oc decreases and J sc increases when heated at higher temperatures. These photovoltaic structures have been found to be stable over a period extending over one year by now. The overall cost of materials, simplicity of the deposition process, and possibility of easily varying the parameters to improve the cell characteristics inspire further work. Here we report two different baths for the deposition of SnS thin films of about 500 nm by chemical deposition. There is a considerable difference in the nature of growth, crystalline structure and chemical stability of these films under air-heating at 623-823 K or while heating SnS-CuS layers, evidenced in XRF and grazing incidence angle XRD studies. Heating of SnS-CuS films results in the formation of SnS-Cu x SnS y . 'All-chemically deposited photovoltaic structures' involving these materials are presented

  3. Enhanced charge collection and photocatalysis performance of CdS and PbS nanoclusters co-sensitized TiO{sub 2} porous film

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao; Xu, Yanyan; Gong, Zezhou; Tao, Jiajia [School of Physics & Material Science, Anhui University, Hefei 230601 (China); Sun, Zhaoqi, E-mail: szq@ahu.edu.cn [School of Physics & Material Science, Anhui University, Hefei 230601 (China); Lv, Jianguo [School of Electronic & Information Engineering, Hefei Normal University, Hefei, 230601 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Chen, Xiaoshuang [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Jiang, Xishun [School of Physics & Material Science, Anhui University, Hefei 230601 (China); School of Mechanical & Electronic Engineering, Chuzhou University, Chuzhou, 239000 (China); He, Gang; Wang, Peihong; Meng, Fanming [School of Physics & Material Science, Anhui University, Hefei 230601 (China)

    2015-11-15

    A novel translucent TiO{sub 2} porous film was prepared through etched method. The CdS, PbS and CdS/PbS nanoclusters were imbedded on TiO{sub 2} porous film by successive ionic layer adsorption and reaction method. Microstructure, morphology, optical and photoelectron-chemical properties of the as-synthesized thin films were investigated systematically. XRD and morphology analysis showed that PbS or CdS nanoclusters have been attached to the TiO{sub 2} porous films. It was found that the energy band gap of TiO{sub 2} porous film decreased from 3.46 to 3.2 eV after sensitized with nanoclusters. The photocurrent density of ITO/TiO{sub 2} photoelectrode increased from 0.017 to 0.28 mA/cm{sup 2} after co-sensitized with CdS and PbS nanoclusters. Besides, the photoelectrode sensitized with two sorts of nanoclusters showed evident higher photocurrent density than which sensitized just one sort of nanoclusters. The photocurrent density of ITO/TiO{sub 2}/PbS and TO/TiO{sub 2}/CdS photoelectrode was 0.11 mA/cm{sup 2} and 0.22 mA/cm{sup 2} respectively. 0.28 mA/cm{sup 2} can be obtained by ITO/TiO{sub 2}/CdS/PbS photoelectrode. The results showed that the optical and photoelectrochemistry properties and phtotcatalysis performance of TiO{sub 2} porous film were greatly improved by co-sensitized with CdS and PbS nanoclusters. - Graphical abstract: When CdS and PbS were brought in the cascade structure, such a Fermi level alignment causes upward and downward shifts of the band edges for PbS and CdS, respectively. Therefore the resulting band edges for the ITO/TiO{sub 2}/CdS/PbS devices are inferred to have a stepwise structure. The elevated conduction band edge of PbS provides a higher driving force for the injection of photogenerated electrons from PbS to CdS as well as the injection of excited holes from CdS to PbS. Such a structure offers efficient separation and transport of the excited electrons and holes. - Highlights: • Ti films were obtained from direct current

  4. Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K. [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a technology of low temperature deposition of polycrystalline thin films for solar cells. This research used ITO coated glass substrates, on which CdS was accumulated to a thickness of about 100 nm by using the CBD process, and over this deposition a CuInSe2 film was formed at 300{degree}C by using the ion cluster beam (ICB) process. The manufactured solar cells with a glass/ITO/CdS/CuInSe2/Au structure had an efficiency of 2%. In manufacturing a CuGaSe2 thin film by using the ICB process, effects of acceleration voltage relative to cluster beams and ionization current were investigated. It was found that the film morphology, the result of analysis by using X-ray diffraction, and the electric conductivity are sensitive to the ionization current. From these findings, an optimum film forming condition was derived. A CuGaSe2 thin film was manufactured by using the ICB process over a Cds thin film deposited by using the CDB process. Both of the surface morphology and X-ray diffraction patterns of the film did not show a large change, indicating a possibility of manufacturing cells with a reverse structure. Effects of heat treatment on CuInSe2 monocrystals were evaluated by using ESR and FTIR. 6 figs., 1 tab.

  5. Resonant infrared pulsed laser deposition of thin biodegradable polymer films

    DEFF Research Database (Denmark)

    Bubb, D.M.; Toftmann, B.; Haglund Jr., R.F.

    2002-01-01

    Thin films of the biodegradable polymer poly(DL-lactide-co-glycolide) (PLGA) were deposited using resonant infrared pulsed laser deposition (RIR-PLD). The output of a free-electron laser was focused onto a solid target of the polymer, and the films were deposited using 2.90 (resonant with O...... absorbance spectrum of the films is nearly identical with that of the native polymer, the average molecular weight of the films is a little less than half that of the starting material. Potential strategies for defeating this mass change are discussed....

  6. Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

    KAUST Repository

    Roelofs, Katherine E.

    2013-03-21

    Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

  7. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  8. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  9. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  10. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

  11. Novel patterning of CdS / CdTe thin film with back contacts for ...

    Indian Academy of Sciences (India)

    Murugaiya Sridar Ilango

    2018-03-12

    Mar 12, 2018 ... Patterning of solar cell; thin film; back contact; e-beam lithography. PACS Nos 68.55.–a; 85.40.Hp. 1. Introduction ... So the performance of back contact solar cell is to be tested along with the increased junction area .... 3.1 Descriptive analysis of nanotextured solar cells. The nanopatterned cells have 500 ...

  12. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  13. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  14. Biomaterials supported CdS nanocrystals

    International Nuclear Information System (INIS)

    Balu, Alina M.; Campelo, Juan M.; Luque, Rafael; Rajabi, Fatemeh; Romero, Antonio A.

    2010-01-01

    CdS quantum dot materials were prepared through a simple room temperature deposition of CdS nanocrystals on biomaterials including starch and chitosan. Materials obtained were found to contain differently distributed CdS nanocrystals on the surface of the biopolymers, making them potentially interesting for biomedical applications as contrast agents and/or in photocatalysis.

  15. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  16. Formation of a ZnS Zn S,O bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

    OpenAIRE

    Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H. W.; Lux Steiner, M.C

    2006-01-01

    The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine, has helped to achieve a similar efficiency as respective CdS buffered reference devices. In order to shed light on the differences of other Zn compound buffers deposited in con...

  17. Sputter deposition of metallic thin film and directpatterning

    Energy Technology Data Exchange (ETDEWEB)

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  18. High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.

    2002-05-01

    In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.

  19. Nickel films: Nonselective and selective photochemical deposition and properties

    International Nuclear Information System (INIS)

    Smirnova, N.V.; Boitsova, T.B.; Gorbunova, V.V.; Alekseeva, L.V.; Pronin, V.P.; Kon'uhov, G.S.

    2006-01-01

    Nickel films deposited on quartz surfaces by the photochemical reduction of a chemical nickel plating solution were studied. It was found that the deposition of the films occurs after an induction period, the length of which depends on the composition of the photolyte and the light intensity. Ni particles with a mean diameter of 20-30 nm were detected initially by transmission electron microscopy. The particles then increased in size (50 nm) upon irradiation and grouped into rings consisting of 4-5 particles. Irradiation with high-intensity light produces three-dimensional films. The calculated extinction coefficient of the nickel film was found to be 4800 L mol -1 cm -1 . Electron diffraction revealed that the prepared amorphous nickel films crystallize after one day of storage. It was determined that the films exhibit catalytic activity in the process of nickel deposition from nickel plating solution. The catalytic action remains for about 5-7 min after exposure of the films to air. The processes of selective and nonselective deposition of the nickel films are discussed. The use of poly(butoxy titanium) in the process of selective photochemical deposition enables negative and positive images to be prepared on quartz surfaces

  20. Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Guo, C.T.

    2008-01-01

    Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH 4 and CH 4 /H 2 gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I D /I G on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media

  1. Dynamics of faceted thin films formation during vapor deposition

    Science.gov (United States)

    Li, Kun-Dar; Huang, Po-Yu

    2018-01-01

    In this study, an anisotropic phase-field model was established to simulate the growth of crystalline thin films during vapor deposition. The formation and evolution of characteristic surface with faceted morphologies were demonstrated, in accordance with the regularly obtained microstructure in the actual experiments. In addition, the influences of deposition parameters, such as the deposition rate and the interfacial energy, on the formation mechanism of the characteristic morphology were also illustrated. While a relatively low surface energy of substrate was regarded, the faceted islands were formed, owing to the anisotropic interfacial energy of thin films. In the condition of a high surface energy of substrate, the layered structures of deposited films were produced, which was corresponding to the Frank–van der Merwe growth mode. As various deposition rates were utilized in the numerical simulations, diverse surface morphologies were developed on the basis of the dominant mechanisms, correlating with the adatom diffusion and the deposition kinetics. According to the calculation results, it was observed that a surface character with flattened morphology was generally driven by the adatom diffusion, while the factor of the deposition kinetics was inclined to roughen the surface of thin films. These numerical simulations enhanced the knowledge of thin film growth and facilitated the progress of the vapor deposition technology for advanced applications.

  2. Enhanced Performance of DSSCs Based on the Insertion Energy Level of CdS Quantum Dots

    Directory of Open Access Journals (Sweden)

    Xiaoping Zou

    2014-01-01

    Full Text Available Cadmium sulfide (CdS quantum dots (QDs are assembled onto the TiO2 films by chemical bath deposition method (CBD. And the QDs size is controlled by the times of CBD cycles. They are characterized by UV-visible absorption. To avoid the photo corrosion and electrolyte corrosion, CdS and N719 are sequentially assembled onto the nanocrystalline TiO2 films to prepare a CdS/N719 cosensitized photo electrode for the dye-sensitized solar cells. In the structure of TiO2/CdS/N719 electrode, the reorganization of energy levels between CdS and N719 forms a stepwise structure of band-edge levels which is advantageous to the electron injection and hole recovery of CdS and N719 QDs. The open circuit voltage (Voc, short circuit current density (Jsc, and efficiency are increased.

  3. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  4. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  5. ZnSe thin films by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

    1998-09-04

    The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

  6. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  7. Chemical vapor deposition of cadmium tellurium films for photovoltaic devices

    International Nuclear Information System (INIS)

    Chu, S.S.; Chu, T.L.; Han, K.D.; Liu, Y.Z.; Mantravadi, M.

    1987-01-01

    Cadmium telluride films have been deposited by chemical vapor deposition (CVD) and close-spaced sublimation (CSS), and their structural and electrical properties have been characterized in detail. The CVD technique has the advantage of controlling the electrical resistivity of p-CdTe films while the CST technique is capable of depositing p-CdTe films at high rates. Thin film heterojunction solar cells of the configuration p-CdTe/CdS/SnO/sub 2/:F/glass have been prepared by the deposition techniques. Solar cells of 1 cm/sup 2/ or larger in area with AM1.5 (global) efficiency of 10.5% have been prepared

  8. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    aurate plating solutions has been carried out at varying concentrations, deposition durations as well as bath temperatures, and the result- ing films were characterized by X-ray diffraction, optical profilometry, atomic force microscopy and ...

  9. Laser Induced Chemical Vapor Deposition of Thin Films

    National Research Council Canada - National Science Library

    Zahavi, Joseph

    1995-01-01

    .... It completes the information which was given in the previous two progress reports. Basically, the aim of the first year was to study the possibility of deposition of silicon nitride thin films from silane and ammonia at low temperatures...

  10. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  11. Growth of superconducting tantalum films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scherschel, M. (Lab. fuer Festkoerperphysik, ETH-Hoenggerberg, Zuerich (Switzerland) Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Finkbeiner, F. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Zhao, S.P. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Jaggi, A. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Maier, T. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Lerch, P. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Zehnder, A. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Ott, H.R. (Lab. fuer Festkoerperphysik, ETH-Hoenggerberg, Zuerich (Switzerland) Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland))

    1994-02-01

    Pulsed laser deposition (PLD) was used to grow superconducting Ta-films with critical temperatures close to bulk values (4.5 K) on sapphire substrates. Results are compared with films grown by e-beam evaporation. The PLD method allows the growth of superconducting Ta-films on substrates kept at ambient temperature but film surfaces are plagued by sub-micron particles. On the other hand, e-beam evaporation results in smooth surfaces but requires a substrate temperature of the order of 400 C for producing high-quality superconducting films. Critical temperatures, residual resistance ratios, and crystal structure are presented. (orig.)

  12. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  13. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  14. The deposition of magnesium fluoride (MGF 2 ) thin films by ...

    African Journals Online (AJOL)

    The Chemical Bath Deposition (CBD) technique was successfully employed in the growth of magnesium fluoride (MgF2) thin films. The films were characterized and optimized. The characterization included: the optical and solid state properties such as the transmittance (T)/reflectance (R) absorbance (A) spectra which ...

  15. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  16. Thickness effect on properties of titanium film deposited by dc ...

    Indian Academy of Sciences (India)

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD) ...

  17. Carbonaceous alumina films deposited by MOCVD from aluminium ...

    Indian Academy of Sciences (India)

    Spectroscopic ellipsometry was used to characterize carbonaceous, crystalline aluminium oxide films grown on Si(100) by low-pressure metal organic chemical vapour deposition, using aluminium acetylacetonate as the precursor. The presence of carbon in the films, attribured to the use of a metalorganic precursor for the ...

  18. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  19. The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

    International Nuclear Information System (INIS)

    Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.

    2010-01-01

    Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

  20. Characterization of chemically deposited low-cost 2-6 thin films solar cells : modifying effects with catalytic silicotungstic acid (STA)

    Energy Technology Data Exchange (ETDEWEB)

    Petuenju, E.N.; Savadogo, O. [Ecole Polytechnique de Montreal, Montreal, PQ (Canada). Laboratoire de nouveaux materiaux pour l' energie et l' electrochimie

    2008-07-01

    This paper described some properties of cadmium sulphide (CdS) thin films that were chemically deposited on a silicon wafer for solar cell and optoelectronic applications. The as-deposited films were thermally annealed and characterized through structural, electrical, optical, and spectroscopic methods. The modifying effects of silicotungstic acid (STA) showed promising characteristics for various applications, including X- and gamma-ray detector devices. The films were characterized by X-rays Photoelectron Spectroscopy, Scanning Electron Microscopy, X-ray Diffraction, and Photoluminescence. Ellipsometry measurements were used to determine the thickness of the sample. The study showed that there is no significant effect of the addition of 10-4 M of STA on the thickness of the film. This might be due to the low concentration of STA. No significant difference was noted for samples deposited with and without STA. In both cases the crystallite size of the sample was estimated to be lower than 1.5 microns. The CdS/Si and CdS(STA)/Si samples were annealed at 360 degrees C for 12 hours. The samples prepared with and without STA had the same structure. CdS deposited without and STA exhibited a mixed hexagonal and cubic structure, most likely because the annealing temperature of the sample was very close to the transition temperature of the cubic structure to the hexagonal structure. 3 refs., 1 tab., 3 figs.

  1. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  2. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  3. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    Science.gov (United States)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  4. Low resistance polycrystalline diamond thin films deposited by hot ...

    Indian Academy of Sciences (India)

    Administrator

    Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition. MAHTAB ULLAH, EJAZ AHMED, ABDELBARY ELHISSI† and WAQAR ..... Support Initiative Program (IRSIP). References. Abbas T, Ullah M, Rana A M and Arif Khalil R M 2007 Mater. Sci. Poland 25 1161. Bataineh M ...

  5. Deposition of metal chalcogenide thin films by successive ionic layer ...

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  6. Deposition of metal chalcogenide thin films by successive ionic layer

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  7. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

  8. Nanoparticle and nanorod films deposited by matrix assisted pulsed laser evaporation

    Science.gov (United States)

    Caricato, A. P.; Cesaria, M.; Luches, A.; Martino, M.

    2012-07-01

    The promising results obtained with the MAPLE-deposition of nanostructured thin films, to be used in different fields, are reviewed. Nanoparticles (TiO2, SnO2, CdS) and nanorods (TiO2) with well defined dimensions were suspended in appropriate solvents (distilled water, toluene) with low concentration (1wt% or less). The solutions were flash frozen at the liquid nitrogen temperature to form the targets to be laser irradiated. The MAPLE process allowed a successful transfer from the target to rough and flat substrates, preserving the starting composition and crystalline phase of the nanostructures in a wide range of experimental conditions. In contrast, a careful choice of the laser fluence is mandatory to avoid shape modifications. Growth of metal nanoparticles with a low dispersion in size was also obtained by the MAPLE technique, starting from target solutions of a metallorganic element (AcPd) diluted in different solvents (acetone, diethyl ether). It seems that selecting the solvent with appropriate values of viscosity and boiling temperatures, it is possible to modulate the nanoparticles size. Most of the deposited nanostructured films were tested as sensing elements for gas sensors.

  9. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  10. Deposit of thin films for Tokamaks conditioning

    International Nuclear Information System (INIS)

    Valencia A, R.

    2006-01-01

    discharge plasma, created in a calibrated mixture of methane-hydrogen during the hydrogenated amorphous carbon film deposit on the vessel wall of Novillo tokamak, were determined by mass spectrometry. By way of measuring the emission lines of the carbon and oxygen impurities in intense discharges, the time required by the plasma to interact with the wall was estimated. In addition to it, the temporal conduct of the emission line intensity of these impurities was observed by means of an intensified CCD detector. Once an ∼ 10 % of helium was introduced in the operating gas of the tokamak discharges, a 25-42 eV time variation of the electron temperature was measured using the intensity ratio technique. (Author)

  11. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

    2017-03-01

    Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  12. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  13. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  14. Silicon nitride films deposited with an electron beam created plasma

    Science.gov (United States)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  15. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    Science.gov (United States)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  16. UV laser deposition of metal films by photogenerated free radicals

    Science.gov (United States)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  17. Surface tension gradient enhanced thin film flow for particle deposition

    Science.gov (United States)

    Gilchrist, James; Joshi, Kedar; Muangnapoh, Tanyakorn; Stever, Michael

    2015-11-01

    We investigate the effect of varying concentration in binary mixtures of water and ethanol as the suspending medium for micron-scale silica particles on convective deposition. By pulling a suspension along a substrate, a thin film is created that results in enhanced evaporation of the solvent and capillary forces that order particles trapped in the thin film. In pure water or pure ethanol, assembly and deposition is easily understood by a simply flux balance first developed by Dimitrov and Nagayama in 1996. In solvent mixtures having only a few percent of ethanol, Marangoni stresses from the concentration gradient set by unbalanced solvent evaporation dominates the thin film flow. The thin film profile is similar to that found in ``tears of wine'' where the particles are deposited in the thin film between the tears and the reservoir. A simple model describes the 10x increase of deposition speed found in forming well-ordered monolayers of particles. At higher ethanol concentrations, lateral instabilities also generated by Marangoni stresses cause nonuniform deposition in the form of complex streaks that mirror sediment deposits in larger scale flows. We acknowledge funding from the NSF Scalable Nanomanufacturing Program under grant No. 1120399.

  18. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  19. Sputter deposited Terfenol-D thin films for multiferroic applications

    Directory of Open Access Journals (Sweden)

    K. P. Mohanchandra

    2015-09-01

    Full Text Available In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011 cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10−6.

  20. Heat treatment of cathodic arc deposited amorphous hard carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S.; Ager, J.W. III; Brown, I.G. [and others

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  1. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  2. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

    Science.gov (United States)

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-01

    Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/Vṡs, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel.

  3. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  4. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu

    2017-07-02

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  5. Femtosecond pulsed laser deposition of cobalt ferrite thin films

    Science.gov (United States)

    Dascalu, Georgiana; Pompilian, Gloria; Chazallon, Bertrand; Caltun, Ovidiu Florin; Gurlui, Silviu; Focsa, Cristian

    2013-08-01

    The insertion of different elements in the cobalt ferrite spinel structure can drastically change the electric and magnetic characteristics of CoFe2O4 bulks and thin films. Pulsed Laser Deposition (PLD) is a widely used technique that allows the growth of thin films with complex chemical formula. We present the results obtained for stoichiometric and Gadolinium-doped cobalt ferrite thin films deposited by PLD using a femtosecond laser with 1 kHz repetition rate. The structural properties of the as obtained samples were compared with other thin films deposited by ns-PLD. The structural characteristics and chemical composition of the samples were investigated using profilometry, Raman spectroscopy, X-Ray diffraction measurements and ToF-SIMS analysis. Cobalt ferrite thin films with a single spinel structure and a preferential growth direction have been obtained. The structural analysis results indicated the presence of internal stress for all the studied samples. By fs-PLD, uniform thin films were obtained in a short deposition time.

  6. Low-Temperature Atomic Layer Deposition of CuSbS2for Thin-Film Photovoltaics.

    Science.gov (United States)

    Riha, Shannon C; Koegel, Alexandra A; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-02-08

    Copper antimony sulfide (CuSbS 2 ) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10 4 cm -1 ), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm -1 , as well as a hole concentration of 10 15 cm -3 . Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2 /CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.

  7. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  8. Structural and optical properties of WO{sub 3} films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Y.S., E-mail: yshzou75@gmail.com; Zhang, Y.C.; Lou, D.; Wang, H.P.; Gu, L.; Dong, Y.H.; Dou, K.; Song, X.F.; Zeng, H.B.

    2014-01-15

    Highlights: • Monoclinic WO{sub 3} films were prepared by pulsed laser deposition. • The WO{sub 3} films exhibited preferred (0 0 2) orientation at elevated temperature. • The structure and optical properties of WO{sub 3} films depended on substrate temperature. • The optical band gap of WO{sub 3} films decreased as substrate temperature increased. -- Abstract: Tungsten oxide (WO{sub 3}) films were prepared on Si (1 0 0) and fused silica substrates by pulsed laser deposition (PLD). The effects of substrate temperature on the morphology, microstructure and optical properties of WO{sub 3} films were investigated by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectra and UV–visible spectrophotometer. It was found that the microstructure, morphology and optical properties strongly depend on the substrate temperature. The X-ray diffraction and Raman results indicate that the amorphous WO{sub 3} films are obtained at substrate temperatures below 200 °C whereas the films grown above 300 °C exhibit predominantly (0 0 2) plane orientation, representing the monoclinic structure. The surface roughness, film crystallinity and grain size of the films increase with increasing substrate temperature. The films prepared at substrate temperatures ranging from 300 to 600 °C exhibit high averaged transparency over 60% in the visible region. The optical band gaps of the films are found to decrease monotonically from 3.22 to 3.05 eV as the substrate temperature increases from 200 to 600 °C due to the crystallization of deposited WO{sub 3} film.

  9. Plasma deposited fluorinated films on porous membranes

    Energy Technology Data Exchange (ETDEWEB)

    Gancarz, Irena [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Bryjak, Marek, E-mail: marek.bryjak@pwr.edu.pl [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawski, Jan; Wolska, Joanna [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawa, Joanna; Kujawski, Wojciech [Nicolaus Copernicus University, Faculty of Chemistry, 7 Gagarina St., 87-100 Torun (Poland)

    2015-02-01

    75 KHz plasma was used to modify track etched poly(ethylene terephthalate) membranes and deposit on them flouropolymers. Two fluorine bearing monomers were used: perflourohexane and hexafluorobenzene. The modified surfaces were analyzed by means of attenuated total reflection infra-red spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and wettability. It was detected that hexaflourobenxene deposited to the larger extent than perflourohaxane did. The roughness of surfaces decreased when more fluoropolymer was deposited. The hydrophobic character of surface slightly disappeared during 20-days storage of hexaflourobenzene modified membrane. Perfluorohexane modified membrane did not change its character within 120 days after modification. It was expected that this phenomenon resulted from post-reactions of oxygen with radicals in polymer deposits. The obtained membranes could be used for membrane distillation of juices. - Highlights: • Plasma deposited hydrophobic layer of flouropolymers. • Deposition degree affects the surface properties. • Hydrohilization of surface due to reaction of oxygen with entrapped radicals. • Possibility to use modified porous membrane for water distillation and apple juice concentration.

  10. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  11. A simple approach to deposit MnS thin films

    Science.gov (United States)

    Girish, M.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-01

    Manganese sulphide (MnS) thin films were prepared by nebulized spray pyrolysis technique. Manganese acetate and thiourea was taken as the precursor solution. The films were deposited at various molar ratios (from 1:1 to 1:3) to tune its physical properties. The structural and optical properties of as-deposited and annealed samples were studied. The evaluated band gap values of as-deposited and annealed samples (1:1) are 3.05eV and 3.32eV, respectively. The gradual reduction in band gap of annealed films with increasing molar ratio revealed the enhancement in crystallinity. The photoluminescence spectra also affirm the above results.

  12. Matrix assisted pulsed laser deposition of melanin thin films

    Science.gov (United States)

    Bloisi, F.; Pezzella, A.; Barra, M.; Chiarella, F.; Cassinese, A.; Vicari, L.

    2011-07-01

    Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.

  13. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  14. Supramolecular structure of a perylene derivative in thin films deposited by physical vapor deposition

    International Nuclear Information System (INIS)

    Fernandes, Jose D.; Aoki, Pedro H.B.; Constantino, Carlos J.J.; Junior, Wagner D.M.; Teixeira, Silvio R.

    2014-01-01

    Full text: Thin films of a perylene derivative, the bis butylimido perylene (BuPTCD), were produced using thermal evaporation (PVD, physical vapor deposition). The main objective is to investigate the supramolecular structure of the BuPTCD in these PVD films, which implies to control the thickness and to determine the molecular organization, morphology at micro and nanometer scales and crystallinity. This supramolecular structure is a key factor in the optical and electrical properties of the film. The ultraviolet-visible absorption revealed an uniform growth of the PVD films. The optical and atomic force microscopy images showed a homogeneous surface of the film at micro and nanometer scales. A preferential orientation of the molecules in the PVD films was determined via infrared absorption. The X-ray diffraction showed that both powder and PVD film are in the crystalline form. (author)

  15. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  16. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  17. Glancing angle deposition of thin films engineering the nanoscale

    CERN Document Server

    Hawkeye, Matthew M; Brett, Michael J

    2014-01-01

    This book provides a highly practical treatment of GLAD technology, gathering existing procedures, methodologies, and experimental designs into a single, cohesive volume which will be useful both as a ready reference for those in the field and as a definitive guide for those entering it. It covers: History and development of GLAD techniquesProperties and Characterization of GLAD fabricated filmsDesign and engineering of optical GLAD films including fabrication and testingPost-deposition processing and integrationDeposition systems for GLAD fabrication Also includes a patent survey of relevant literature and a survey of GLAD's wide range of material properties and diverse applications.

  18. High Tc superconducting thin film deposition by excimer laser ablation

    International Nuclear Information System (INIS)

    Fogarassy, E.; Fuchs, C.; Stoquert, J.P.; Siffert, P.; Defourneau, R.M.; Perriere, J.; Rochet, F.; Rosenman, I.; Simon, C.

    1988-01-01

    The possibility to deposite YBaCuO and BiSrCaCuO thin films by laser evaporation in a clean environment has been studied using a pulsed ArF excimer laser. The as-deposited thin films were converted into the superconducting phase by a subsequent anneal in oxygen in the 850-900 0 C temperature range. The onset critical temperatures were respectively 85 and 92 K with a zero resistance at 83 K for BiSrCaCuO [fr

  19. Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-12-15

    Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

  20. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duta, L. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, 409 Atomistilor Street, Magurele (Romania); Oktar, F.N. [Department of Bioengineering, Faculty of Engineering, Marmara University, Goztepe, Istanbul 34722 (Turkey); Department of Medical Imaging Technics, Vocational School of Health Services, Marmara University, Uskudar, Istanbul 34668 (Turkey); Nanotechnology and Biomaterials Application and Research Centre, Marmara University, Istanbul (Turkey); Stan, G.E. [National Institute of Materials Physics, 105 Bis Atomistilor Street, Magurele (Romania); Popescu-Pelin, G.; Serban, N.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, 409 Atomistilor Street, Magurele (Romania); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, 409 Atomistilor Street, Magurele (Romania)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer HA coatings synthesized by pulsed laser deposition. Black-Right-Pointing-Pointer Comparative study of commercial vs. animal origin materials. Black-Right-Pointing-Pointer HA coatings of animal origin were rougher and more adherent to substrates. Black-Right-Pointing-Pointer Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of {approx}2 {mu}m. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical-chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  1. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyan, Rajesh [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); Oulad Elhmaidi, Zakaria [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); Sekkat, Zouheir [Optics & Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat (Morocco); Abd-lefdil, Mohammed [University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); El Khakani, My Ali, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada)

    2017-02-28

    Highlights: • High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. • Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. • Experimental determination of key optoelectronic parameters (i.e.; E{sub g}, VBM, ϕ, I{sub p}, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. • Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials. - Abstract: We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (T{sub a}), but their crystallinity is much improved for T{sub a} ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with T{sub a} (from ∼14 nm at RT to 70 nm at T{sub a} = 500 °C with a value around 40 nm for T{sub a} = 300–400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV–vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at T{sub a} = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS

  2. Experiment and equipment of depositing diamond films with CVD system

    International Nuclear Information System (INIS)

    Xie Erqing; Song Chang'an

    2002-01-01

    CVD (chemical vapor deposition) emerged in recent years is a new technique for thin film deposition, which play a key role in development of modern physics. It is important to predominate the principle and technology of CVD for studying modern physics. In this paper, a suit of CVD experimental equipment for teaching in college physics is presented, which has simple design and low cost. The good result was gained in past teaching practices

  3. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  4. Thin NiTi Films Deposited on Graphene Substrates

    Science.gov (United States)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  5. Pulsed laser deposition of hydroxyapatite thin films

    Czech Academy of Sciences Publication Activity Database

    Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

    2007-01-01

    Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

  6. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  7. Thermoluminescence of thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R.

    2003-01-01

    Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN x whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

  8. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  9. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  10. In situ measurement of conductivity during nanocomposite film deposition

    International Nuclear Information System (INIS)

    Blattmann, Christoph O.; Pratsinis, Sotiris E.

    2016-01-01

    Highlights: • Flame-made nanosilver dynamics are elucidated in the gas-phase & on substrates. • The resistance of freshly depositing nanosilver layers is monitored. • Low T g polymers facilitate rapid synthesis of conductive films. • Conductive nanosilver films form on top of or within the polymer depending on MW. - Abstract: Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (T g ) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing T g . Proper selection of the host polymer in combination with in situ resistance monitoring

  11. In situ measurement of conductivity during nanocomposite film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Blattmann, Christoph O.; Pratsinis, Sotiris E., E-mail: sotiris.pratsinis@ptl.mavt.ethz.ch

    2016-05-15

    Highlights: • Flame-made nanosilver dynamics are elucidated in the gas-phase & on substrates. • The resistance of freshly depositing nanosilver layers is monitored. • Low T{sub g} polymers facilitate rapid synthesis of conductive films. • Conductive nanosilver films form on top of or within the polymer depending on MW. - Abstract: Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (T{sub g}) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing T{sub g}. Proper selection of the host polymer in combination with in situ resistance

  12. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  13. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    acer

    ABSTRACT: Thin films of CuxS have successfully been deposited on glass substrates using the ... different crustal structures depending on the value of X such as hexagonal, orthorhombic pseudo-cubic and tetragonal (pathan and. Lokhande, 2004). For example, CuxS has hexagonal structure and Cu2S may be present in.

  14. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  15. Polymer assisted deposition of electrochromic tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kalagi, S.S. [Govindram Seksaria Science College, Belgaum 590006, Karnataka (India); Dalavi, D.S.; Pawar, R.C.; Tarwal, N.L.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2010-03-18

    We report the synthesis of structurally and uniformly deposited porous tungsten oxide (WO{sub 3}) thin films for the first time by the novel route of polymer assisted deposition (PAD) using ammonium tungstate as a precursor with polyvinyl alcohol (PVA) as an additive. The effect of deposition parameters on the morphological, optical and electrochemical performance of the thin films is investigated. WO{sub 3} thin films were characterized for their structural, morphological, optical and electrochromic properties. XRD result indicates monoclinic phase of WO{sub 2.92}. FT-Raman studies show high intensity peaks centered at 997 cm{sup -1}and 798 cm{sup -1}. SEM results indicate that there is uniform deposition of porous WO{sub 3}-PVA agglomerates on the transparent substrates. SEM data show low dense structure of an average grain size of about 1 {mu}m. Electrochromic studies reveal highly reversible and the stable nature of the thin films. Transmission data show an optical modulation density of 46.57% at 630 nm with an excellent reversibility of 89% and an electrochromic coloration efficiency of 36 cm{sup 2}/C.

  16. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    physical and process related parameters are changed. The grown films are characterized using X-ray ... Silicon nitride is one of the promising materials for numerous applications in the semiconductor industry ... Compared to reactive sputtering, this method offers advantages of low power levels, higher deposition rates and ...

  17. Protection of elastomers with DLC film : deposition, characterization and performance

    NARCIS (Netherlands)

    Martinez Martinez, Diego

    2017-01-01

    Elastomers are materials which suffer from strong wear and cause high friction losses when subjected to dynamic contact, leading quite often to failure of the components in devices. In this Thesis, the protection of elastomers by the deposition of carbon-based films (DLC) is studied. To accomplish

  18. AlN film deposition as a semiconductor device

    Directory of Open Access Journals (Sweden)

    Julio Cesar Caicedo

    2013-05-01

    Full Text Available AlN films were deposited by pulsed laser deposition (PLD using an Nd: YAG laser (λ = 1064 nm. The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99% target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100 substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200°C to 630°C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW devices with a Mo/AlN/Si configuration have been fabricated using AlN-buffer and Mo Channel. The films’ morphology and composition were studied using scanning electron microscopy (SEM and energy dispersive X-ray analysis (EDX, respectively. The films’ optical reflectance spectra and colour coordinates were obtained by optical spectral reflectometry in the 400-900 cm-1 range using an Ocean Optics 2000 spectrophotometer. The present work found clear dependence on morphological properties, reflectance, dominant wavelength colour purity, frequency response and acoustic wave speed in terms of the temperature applied to the substrate. About 30% reduction in reflectance was observed and increased acoustic wave speed of about 1.3 % when the temperature was increased from 200°C to 630°C.

  19. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

  20. Laser deposition and analysis of biocompatible ceramic films - experiences andoverview

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Dostálová, T.; Fotakis, C.; Studnička, Václav; Jastrabík, Lubomír; Havránek, V.; Grivas, C.; Pospíchal, M.; Kadlec, J.; Peřina, Vratislav

    1996-01-01

    Roč. 6, č. 1 (1996), s. 144-149 ISSN 1054-660X Institutional research plan: CEZ:A02/98:Z1-010-914 Keywords : laser deposition * hydroxyapatite * ceramic films Subject RIV: BM - Solid Matter Physics ; Magnetism

  1. Deposition of SiC thin films by PECVD

    CERN Document Server

    Cho, N I; Kim, C K

    1999-01-01

    The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

  2. Pulsed laser deposition of high Tc superconducting thin films

    International Nuclear Information System (INIS)

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  3. Pulsed laser deposition of anatase thin films on textile substrates

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-30

    Highlights: • Anatase thin films were grown on carbon fibre fabrics by pulsed laser deposition. • A novel Q-switched CO{sub 2} laser was utilised as radiation source. • Coated fibres exhibit photocatalytic activity and are resistant against bending. - Abstract: Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  4. Atmospheric pressure chemical vapour deposition of vanadium diselenide thin films

    Science.gov (United States)

    Boscher, Nicolas D.; Blackman, Christopher S.; Carmalt, Claire J.; Parkin, Ivan P.; Prieto, A. Garcia

    2007-05-01

    Atmospheric pressure chemical vapour deposition (APCVD) of vanadium diselenide thin films on glass substrates was achieved by reaction of [V(NMe 2) 4] and tBu 2Se. X-ray diffraction showed that the VSe 2 films were crystalline with preferential growth either along the (1 0 1) or the (1 1 0) direction. Energy-dispersive analysis by X-rays (EDAX) gave a V:Se ratio close to 1:2 for all films. The films were matt black in appearance, were adhesive, passed the Scotch tape test but could be scratched with a steel scalpel. SEM showed that the films were composed of plate-like crystallites orientated parallel to the substrate which become longer and thicker with increasing deposition temperature. Attempts to produce vanadium selenide films were also performed using tBu 2Se and two different vanadium precursors: VCl 4 and VOCl 3. Both were found to be unsuitable for producing VSe 2 from the APCVD reaction with tBu 2Se. The VSe 2 showed charge density wave transition at 110-115 K.

  5. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M.P. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France)]. E-mail: Marie-Paule.Besland@cnrs-imn.fr; Djani-ait Aissa, H. [Division milieux Ionises et lasers, Centre de Developpement des Technologies Avancees CDTA, Baba Hassen Alger, Algerie (Algeria); Barroy, P.R.J. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Lafane, S. [Division milieux Ionises et lasers, Centre de Developpement des Technologies Avancees CDTA, Baba Hassen Alger, Algerie (Algeria); Tessier, P.Y. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Angleraud, B. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Richard-Plouet, M. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Brohan, L. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Djouadi, M.A. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France)

    2006-01-20

    Bi{sub 4-x}La {sub x}Ti{sub 3}O{sub 12} (BLT {sub x}) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO{sub 2}/SiO{sub 2}/Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La){sub 2} Ti{sub 3} O{sub 12} to (Bi,La){sub 4.5}Ti{sub 3}O{sub 12}, depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La){sub 4}Ti{sub 3}O{sub 12} chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones.

  6. Modeling of flame assisted chemical vapor deposition of silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Masi, M.; Cavallotti, C.; Raffa, E. [Dipartimento di Chimica, Materiali e Ingegneria Chimica, Politecnico di Milano, via Mancinelli 7, 20131 Milano (Italy)

    2011-08-15

    The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline films at the high growth rates necessary for photovoltaic applications. In fact, since FACVD processes can operate in atmospheric conditions and in auto-thermal mode, they present significant energetic advantages with respect to the plasma assisted technology used today. This work is in particular devoted to illustrate the multi-hierarchical modeling procedure adopted to determine the process optimal operating conditions and to design the deposition chamber. Different burner geometries (single, porous or multiple nozzles burner) were investigated in order to exploit the advantages of the two classical stagnation flow and Bunsen stretched flames. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. UV pulsed laser deposition of magnetite thin films

    International Nuclear Information System (INIS)

    Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

    2005-01-01

    Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

  8. Flame spray pyrolysis synthesis and aerosol deposition of nanoparticle films

    DEFF Research Database (Denmark)

    Tricoli, Antonio; Elmøe, Tobias Dokkedal

    2012-01-01

    The assembly of nanoparticle films by flame spray pyrolysis (FSP) synthesis and deposition on temperature‐controlled substrates (323–723 K) was investigated for several application‐relevant conditions. An exemplary SnO2 nanoparticle aerosol was generated by FSP and its properties (e.g., particle...... size distribution), and deposition dynamics were studied in details aiming to a simple correlation between process settings and film growth rate. At high precursor concentrations (0.05–0.5·mol/L), typically used for FSP synthesis, the nanoparticles agglomerated rapidly in the aerosol leading to large...... (>100 nm) fractal‐like structures with low diffusivity. As a result, thermophoresis was confirmed as the dominant nanoparticle deposition mechanism down to small (≈40 K) temperature differences (ΔT) between the aerosol and the substrate surface. For moderate‐high ΔT (>120 K), thermal equilibrium...

  9. Vacuum deposition onto webs, films and foils

    CERN Document Server

    Bishop, Charles A

    2011-01-01

    Roll-to-roll vacuum deposition is the technology that applies an even coating to a flexible material that can be held on a roll and provides a much faster and cheaper method of bulk coating than deposition onto single pieces or non-flexible surfaces, such as glass. This technology has been used in industrial-scale applications for some time, including a wide range of metalized packaging (e.g. snack packets). Its potential as a high-speed, scalable process has seen an increasing range of new products emerging that employ this cost-effective technology: solar energy products are moving from rigid panels onto flexible substrates, which are cheaper and more versatile; in a similar way, electronic circuit 'boards' can be produced on a flexible polymer, creating a new range of 'flexible electronics' products; and, flexible displays are another area of new technology in vacuum coating, with flexible display panels and light sources emerging. Charles Bishop has written this book to meet the need he identified, as a t...

  10. Polarized Raman spectroscopy of chemically vapour deposited diamond films

    International Nuclear Information System (INIS)

    Prawer, S.; Nugent, K.W.; Weiser, P.S.

    1994-01-01

    Polarized micro-Raman spectra of chemically vapour deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to non-diamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the non-diamond components in the films is almost completely depolarized whilst the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semi-quantitative fashion for the assessment of the purity, perfection and stress in CVD diamond films. 8 refs., 1 tab. 2 figs

  11. Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

    International Nuclear Information System (INIS)

    Yu Shiji; Ma Tengcai

    2003-01-01

    Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy, microhardness, deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage, and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality

  12. Properties of ZnO thin films deposited by chemical bath deposition and post annealed

    International Nuclear Information System (INIS)

    Ouerfelli, J; Regragui, M; Morsli, M; Djeteli, G; Jondo, K; Amory, C; Tchangbedji, G; Napo, K; Bernede, J C

    2006-01-01

    ZnO thin films deposited by chemical bath deposition (CBD) have been studied using x-ray diffraction, scanning electron microscopy, electron microprobe analysis and electrical measurements. The optimum CBD conditions for achieving structured, but adherent, ZnO films are as follows. Zinc acetate (0.0188 mol l -1 ) and ethylenediamine (0.03 mol l -1 ) are mixed. The pH of the bath is raised by addition of a base (0.5 mol l -1 , NaOH). The solution is maintained at a temperature between 60 deg. C and 65 0 C, while the bath is continuously stirred. We proceeded to anneal in room air for 30 min at 300 deg. C and under vacuum for 2 h at 300 deg. C. All the films obtained are nearly stoichiometric ZnO films crystallized in the usual hexagonal structure. As expected the films are rough and porous. The main difference between the two ZnO film families is their conductivity. The conductivity of the films annealed under vacuum is five orders of magnitude higher than that of those annealed in room air

  13. Production of selective membranes using plasma deposited nanochanneled thin films

    Directory of Open Access Journals (Sweden)

    Rodrigo Amorim Motta Carvalho

    2006-12-01

    Full Text Available The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1 permeation of polar organic compounds and/or water in gaseous phase and 2 permeation of salt in liquid phase. The efficiency of permeation was tested using a quartz crystal microbalance (QCM technique in gas phase and conductimetric analysis (CA in liquid phase. The substrates used were: silicon for characterization of the deposited films, piezoelectric quartz crystals for tests of selective membranes and cellophane paper for tests of permeation. QCM analysis showed that the nanochannels allow the adsorption and/or permeation of polar organic compounds, such as acetone and 2-propanol, and water. CA showed that the films allow salt permeation after an inhibition time needed for hydrolysis of the organic radicals within the film. Due to their characteristics, the films can be used for grains protection against microorganism proliferation during storage without preventing germination.

  14. Particulate generation during pulsed laser deposition of superconductor thin films

    International Nuclear Information System (INIS)

    Singh, R.K.

    1993-01-01

    The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

  15. Convenient synthesis of magnetically recyclable Fe{sub 3}O{sub 4}@C@CdS photocatalysts by depositing CdS nanocrystals on carbonized ferrocene

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dan [Institute of Physical Chemistry, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China); Xie, Jianjian [Department of Materials Physics, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China); Zhang, Yong; Qiao, Ru [Institute of Physical Chemistry, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China); Li, Sheng [Department of Materials Physics, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China); Li, Zhengquan, E-mail: zqli@zjnu.edu.cn [Institute of Physical Chemistry, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China); Department of Materials Physics, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China)

    2015-10-15

    Development of magnetic visible-light-driven photocatalysts is desirable to the practical application of photocatalyts for collection and recycling use. Here we present a facile approach to synthesize Fe{sub 3}O{sub 4}@C@CdS magnetic photocatalysts which can avoid multi-step preparation process. Through one-step solvothermal carbonization of ferrocene, the produced carbon-coated Fe{sub 3}O{sub 4} clusters can serve as both magnetic cores and deposition substrates for in situ generating crystalline CdS nanocrystals on them by rapid microwave irradiation. The prepared Fe{sub 3}O{sub 4}@C@CdS nanoparticles exhibit a uniform core–shell structure and display good photocatalytic activity and recyclability in the degradation of organic dyes. These magnetic photocatalysts may find potential application in wastewater treatment for the future environment remedy. - Highlights: • A rapid strategy is presented to obtain multifunctional core–shell nanostructures. • Magnetic visible-light-driven Fe{sub 3}O{sub 4}@C@CdS nanophotocatalysts are synthesized. • Carbonized ferrocene can provide both magnetic cores and good deposition substrate. • Photocatalytic and recyclable properties of Fe{sub 3}O{sub 4}@C@CdS nanoparticles are explored.

  16. Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

    Science.gov (United States)

    Anna M. Clausen; Deborah M. Paskiewicz; Alireza Sadeghirad; Joseph Jakes; Donald E. Savage; Donald S. Stone; Feng Liu; Max G. Lagally

    2014-01-01

    Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in bulk substrates, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon...

  17. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... bound carbon molecule with a well-defined mass (M = 720 amu) and therefore a good, organic test molecule. C60 fullerene thin films of average thickness of more than 100 nm was produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target...

  18. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  19. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  20. A new thin film deposition process by cathodic plasma electrolysis

    International Nuclear Information System (INIS)

    Paulmier, T.; Kiriakos, E.; Bell, J.; Fredericks, P.

    2004-01-01

    Full text: A new technique, called atmospheric pressure plasma deposition (APPD), has been developed since a few years for the deposition of carbon and DLC, Titanium or Silicon films on metal and metal alloys substrates. A high voltage (2kV) is applied in a liquid electrolytic solution between an anode and a cathode, both electrodes being cylindrical: a glow discharge is then produced and confined at the vicinity of the cathode. The physic of the plasma in the electrolytic solution near the cathode is very different form the other techniques of plasma deposition since the pressure is here close to the atmospheric pressure. We describe here the different physico-chemical processes occurring during the process. In this cathodic process, the anodic area is significantly larger than the cathode area. In a first step, the electrolytic solution is heated by Joule effect induced by the high voltage between the electrodes. Due to the high current density, the vaporization of the solution occurs near the cathode: a large amount of bubbles are produced which are stabilized at the electrode by hydrodynamic and electromagnetic forces, forming a vapour sheath. The electric field and voltage drop are then concentrated in this gas envelope, inducing the ionization of the gas and the ignition of a glow discharge at the surface of the material. This plasma induces the formation of ionized and reactive species which diffuse and are accelerated toward the cathode. These excited species are the precursors for the formation of the deposition material. At the same time, the glow discharge interacts with the electrolyte solution inducing also ionization, convection and polymerization processes in the liquid: the solution is therefore a second source of the deposition material. A wide range of films have been deposited with a thickness up to 10 micrometers. These films have been analyzed by SEM and Raman spectroscopy. The electrolytic solution has been characterized by GC-MS and the

  1. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  2. Deposition and characterization of p-type cadmium telluride films

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Firszt, F.; Naseem, H. A.; Stawski, R.

    1985-08-01

    Cadmium telluride is a direct-gap semiconductor with a room-temperature energy gap of 1.5 eV. It is a promising photovoltaic material, and single-crystalline homojunction and heterojunction solar cells have been prepared and characterized. Relatively short minority carrier diffusion length (1-2 microns) can be tolerated due to a short optical absorption length, and, for this reason, CdTe is particularly suited for thin-film devices. The fabrication of thin-film solar cells is based on the use of p-type CdTe films. The present investigation has the objective to prepare CdTe films with controlled properties in a reproducible manner, taking into account a utilization of the reaction of Cd and Te vapor on the surface of heated substrates in a hydrogen (or helium) atmosphere in a gas-flow system. Attention is given to details of film deposition, and CdTe films on graphite, W/graphite, mullite, and glass substrates.

  3. Reactive pulsed laser deposition of gold nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P. [University of Salento, Department of Physics, 73100 Lecce (Italy); Fernandez, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Leggieri, G. [University of Salento, Department of Physics, 73100 Lecce (Italy)]. E-mail: leggieri@le.infn.it; Luches, A. [University of Salento, Department of Physics, 73100 Lecce (Italy); Martino, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Romano, F. [University of Salento, Department of Physics, 73100 Lecce (Italy); Tunno, T. [University of Salento, Department of Physics, 73100 Lecce (Italy); Valerini, D. [University of Salento, Department of Physics, 73100 Lecce (Italy); Verdyan, A. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Soifer, Y.M. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Azoulay, J. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Meda, L. [IGD Polimeri Europa S.p.A, Novara (Italy)

    2007-07-31

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N{sub 2} or NH{sub 3}). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 deg. C. Film resistivity was measured using a four-point probe and resulted in the (4-20) x 10{sup -8} {omega} m range, depending on the ambient pressure, to be compared with the value 2.6 x 10{sup -8} {omega} m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N{sub 2} phase. All these measurements point to the formation of the gold nitride phase.

  4. Nanoparticle formation and thin film deposition in aniline containing plasmas

    Science.gov (United States)

    Pattyn, Cedric; Dias, Ana; Hussain, Shahzad; Strunskus, Thomas; Stefanovic, Ilija; Boulmer-Leborgne, Chantal; Lecas, Thomas; Kovacevic, Eva; Berndt, Johannes

    2016-09-01

    This contribution deals with plasma based polymerization processes in mixtures of argon and aniline. The investigations are performed in a capacitively coupled RF discharge (in pulsed and continuous mode) and concern both the observed formation of nanoparticles in the plasma volume and the deposition of films. The latter process was used for the deposition of ultra-thin layers on different kind of nanocarbon materials (nanotubes and free standing graphene). The analysis of the plasma and the plasma chemistry (by means of mass spectroscopy and in-situ FTIR spectroscopy) is accompanied by several ex-situ diagnostics of the obtained materials which include NEXAFS and XPS measurements as well as Raman spectroscopy and electron microscopy. The decisive point of the investigations concern the preservation of the original monomer structure during the plasma polymerization processes and the stability of the thin films on the different substrates.

  5. DLC Films Deposited by the DC PACVD Method

    Directory of Open Access Journals (Sweden)

    D. Palamarchuk

    2003-01-01

    Full Text Available DLC (Diamond-Like Carbon coatings have been suggested as protective surface layers against wear. However hard DLC coatings, especially those of greater thickness, have poor adhesion to substrates. We have used several ways to increase the adhesion of DLC coatings prepared by the PACVD (Plasma Assisted Chemical Vapour Deposition method on steel substrates. One of these is the DC PACVD method for preparing DLC films.

  6. DLC Films Deposited by the DC PACVD Method

    OpenAIRE

    D. Palamarchuk; M. Zoriy; J. Gurovič; F. Černý; S. Konvičková; I. Hüttel

    2003-01-01

    DLC (Diamond-Like Carbon) coatings have been suggested as protective surface layers against wear. However hard DLC coatings, especially those of greater thickness, have poor adhesion to substrates. We have used several ways to increase the adhesion of DLC coatings prepared by the PACVD (Plasma Assisted Chemical Vapour Deposition) method on steel substrates. One of these is the DC PACVD method for preparing DLC films.

  7. Thermoluminescence of Zn O thin films deposited by chemical bath

    International Nuclear Information System (INIS)

    Camacho A, M. C.; Cruz V, C.; Bernal H, R.; Berman M, D.; Castano M, V. M.

    2015-10-01

    Full text: Zn O films on Si were synthesized using a deposition method by chemical bath and thermally treated at 900 degrees C for 12 h in air. The morphological characterization by scanning electron microscopy reveals that uniform films were obtained. To investigate the thermoluminescent properties of the films were exposed to irradiation with beta particles with doses in the range from 0.5 to 128 Gy. The brightness curves obtained using a heating rate of 5 degrees C have two peaks, one at 124 and another at 270 degrees C, and a linear dependence of the integrated thermoluminescence as a function of dose. The second maximum reveals the existence of localized trapping states of potential utility in thermoluminescent dosimetry. (Author)

  8. Supercritical fluid molecular spray film deposition and powder formation

    Science.gov (United States)

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  9. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  10. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

    2008-01-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

  11. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    International Nuclear Information System (INIS)

    Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

    2015-01-01

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

  12. Deposition and Tribological Properties of Sulfur-Doped DLC Films Deposited by PBII Method

    Directory of Open Access Journals (Sweden)

    Nutthanun Moolsradoo

    2010-01-01

    Full Text Available Sulfur-doped diamond-like carbon films (S-DLC fabricated from C2H2 and SF6 mixtures were used to study the effects of sulfur content and negative pulse bias voltage on the deposition and tribological properties of films prepared by plasma-based ion implantation (PBII. The structure and relative concentration of the films were analyzed by Raman spectroscopy and Auger electron spectroscopy. Hardness and elastic modulus of films were measured by nanoindentation hardness testing. Tribological characteristics of films were performed using a ball-on-disk friction tester. The results indicate that with the increasing sulfur content, the hardness and elastic modulus decrease. Additionally, by changing the negative pulse bias voltage from 0 kV to −5 kV, the hardness and elastic modulus increase, while the friction coefficient and specific wear rate tends to decrease. Moreover, at a negative pulse bias voltage of −5 kV and flow-rate ratio of 1 : 2, there is considerable improvement in friction coefficient of 0.05 under ambient air is due to the formation of a transfer films on the interface. The decrease in the friction coefficient of films doped with 4.9 at.% sulfur is greater under high vacuum (0.03 than under ambient air (>0.1.

  13. Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

    2011-01-01

    When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

  14. Retention of heavy metals on layered double hydroxides thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 76900 Bucharest-Magurele (Romania); Birjega, R.; Matei, A.; Luculescu, C.; Mitu, B.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 76900 Bucharest-Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

    2014-05-01

    Heavy metals are toxic and hazardous pollutants in the environment due to their nonbiodegradability and persistence, which can pose serious threats to living organisms. The ability of Mg–Al based layered double hydroxides (LDHs) thin films to retain heavy metals from aqueous solutions at different concentrations is a novel topic with prospects of attractive applications, such as detection of heavy metals. We report on the ability of a series of Mg–Al based layered double hydroxides thin films to detect Ni and Co cations in aqueous solutions. Uptake of heavy metals ions such as Ni{sup 2+}, Co{sup 2+} from aqueous solutions was studied as function of contact time at a standard metal ion concentration. The LDHs thin films were deposited using pulsed laser deposition (PLD). The different adsorption mechanisms were studied in connection with different heavy metals used as probe cations. X-ray diffraction, atomic force microscopy, scanning electron microscopy coupled with energy dispersive X-ray spectroscopy, Fourier transform infra-red spectroscopy were the techniques used for the investigation of as deposited and after heavy metals retention thin films.

  15. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  16. Morphology evolution in spinel manganite films deposited from an aqueous solution

    International Nuclear Information System (INIS)

    Ko, Song Won; Li, Jing; Trolier-McKinstry, Susan

    2012-01-01

    Spinel manganite films were deposited by the spin spray technique at low deposition temperatures ( 1000, agglomeration of small particles was dominant, which suggests that homogeneous nucleation is dominant during deposition. Heterogeneous nucleation was critical to obtain dense films. - Highlights: ► Film microstructure depends on supersaturation. ► Heterogeneous nucleation induces dense and continuous films. ► The spin spray technique enables use of a variety of substrates.

  17. Enhanced Optical Absorption of Ti Thin Film: Coupled Effect of Deposition and Post-deposition Temperatures

    Science.gov (United States)

    Jaiswal, Jyoti; Mourya, Satyendra; Malik, Gaurav; Chauhan, Samta; Daipuriya, Ritu; Singh, Manpreet; Chandra, Ramesh

    2017-11-01

    In the present work, structural, morphological and optical properties of nanostructured titanium (Ti) thin films have been studied. The Ti thin films were fabricated on glass substrate by direct current (DC) magnetron sputtering at varying deposition and post-deposition temperatures ( T DA) ranging from 373 K to 773 K. The microstructure and morphology of the Ti thin films were found to be highly dependent on T DA. The root mean square surface roughness ( δ rms) was found to increase with T DA up to 673 K and then decreased at 773 K. The absorption ( A) of Ti films has shown a similar trend as roughness with T DA; however, the reflection ( R) has shown an opposite trend. Maximum A 99-86% and minimum R 1-14% were observed in the spectral range of 300-1100 nm for the sample fabricated at T DA = 673 K, which exhibited the highest δ rms 193 nm. Due to its excellent absorption, this film may be a potential candidate for photonic applications such as a super-absorber.

  18. Advances in pulsed laser deposition growth of nitride thin films

    Science.gov (United States)

    Fernandez, Felix E.; Pumarol, Manuel; Martinez, Antonio; Jia, Weiyi; Wang, Yanyung; Rodriguez, Edgardo; Mourad, Houssam A.

    1999-07-01

    Pulsed laser deposition of nitride semiconductor films offers an alternative to more usual techniques, such as MOCVD and MBE. PLD can produce good quality films at reduced growth temperatures. Rapid progress has been achieved in the laser few years, including demonstrations of epitaxial growth of GaN directly on sapphire. Work on PLD of direct- transition III- nitrides is briefly reviewed and our recent results for these materials are presented. Growth of these nitrides requires provision of nitrogen in a reactive form, which is usually supplied by NH3 gas flow. With the approach described here, reactive nitrogen is provided in an atomic beam, which has the advantage of reducing dependence on substrate temperature to surmount the kinetic energy barrier for formation, while eliminating a source of hydrogen during growth. Films grown from ceramic GaN targets are compared with those grown from liquid Ga. The latter method can offer better control of unintentional doping. InN films were also grown directly from In metal targets, with very good results in term so stoichiometry and crystalline quality. AlN films were grown from ceramic AlN targets, with excellent texture at reduced temperatures. Results are presented for crystal structure, composition and surface morphology. Optical properties were studied by transmission and luminescence spectroscopy.

  19. Short review on chemical bath deposition of thin film and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  20. Liquid films and droplet deposition in a BWR fuel element

    International Nuclear Information System (INIS)

    Damsohn, M.

    2011-01-01

    In the upper part of boiling water reactors (BWR) the flow regime is dominated by a steam-water droplet flow with liquid films on the nuclear fuel rod, the so called (wispy) annular flow regime. The film thickness and liquid flow rate distribution around the fuel rod play an important role especially in regard to so called dryout, which is the main phenomenon limiting the thermal power of a fuel assembly. The deposition of droplets in the liquid film is important, because this process sustains the liquid film and delays dryout. Functional spacers with different vane shapes have been used in recent decades to enhance droplet deposition and thus create more favorable conditions for heat removal. In this thesis the behavior of liquid films and droplet deposition in the annular flow regime in BWR bundles is addressed by experiments in an adiabatic flow at nearly ambient pressure. The experimental setup consists of a vertical channel with the cross-section resembling a pair of neighboring subchannels of a fuel rod bundle. Within this double subchannel an annular flow is established with a gas-water mixture. The impact of functional spacers on the annular flow behavior is studied closely. Parameter variations comprise gas and liquid flow rates, gas density and spacer shape. The setup is instrumented with a newly developed liquid film sensor that measures the electrical conductance between electrodes flush to the wall with high temporal and spatial resolution. Advanced post-processing methods are used to investigate the dynamic behavior of liquid films and droplet deposition. The topic is also assessed numerically by means of single-phase Reynolds-Averaged-Navier-Stokes CFD simulations of the flow in the gas core. For this the commercial code STAR-CCM+ is used coupled with additional models for the liquid film distribution and droplet motion. The results of the experiments show that the liquid film is quite evenly distributed around the circumference of the fuel rods. The

  1. Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liu Yunyan; Cheng Chuanfu; Yang Shanying; Song Hongsheng; Wei Gongxiang; Xue Chengshan; Wang Yongzai

    2011-01-01

    We analyze the morphology evolution of the Ga doped ZnO(GZO) films deposited on quartz substrates by a laser deposition system. The surface morphologies of the film samples grown with different times are measured by the atomic force microscope, and they are analyzed quantitatively by using the image data. In the initial stage of the growth time shorter than 8 min, our analysis shows that the GZO surface morphologies are influenced by such factors as the random fluctuations, the smoothening effects in the deposition, the lateral strain and the substrate. The interface width uw(t) and the lateral correlation length ξ(t) at first decrease with deposition time t. For the growth time larger than 8 min, w(t) and ξ(t) increase with time and it indicates the roughening of the surface and the surface morphology exhibits the fractal characteristics. By fitting data of the roughness w(t) versus deposition time t larger than 4 min to the power-law function, we obtain the growth exponent β is 0.3; and by the height-height correlation functions of the samples to that of the self-affine fractal model, we obtain the value of roughness exponent α about 0.84 for all samples with different growth time t.

  2. Structure and properties of TiC, VC, and TiC/VC thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Krzanowski, J.E.; Leuchtner, R.E.

    1996-01-01

    A study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiC/VC thin films. The TiC films were deposited at 375 C and 5 mTorr Ar, while the TiC/VC films were deposited from a composite target at 475 C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiC/VC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings

  3. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  4. Optimization and testing of solid thin film lubrication deposition processes

    Science.gov (United States)

    Danyluk, Michael J.

    A novel method for testing solid thin films in rolling contact fatigue (RCF) under ultra-high vacuum (UHV) and high rotational speeds (130 Hz) is presented in this thesis. The UHV-RCF platform is used to quantify the adhesion and lubrication aspects of two thin film coatings deposited on ball-bearings using a physical vapor deposition ion plating process. Plasma properties during ion plating were measured using a Langmuir probe and there is a connection between ion flux, film stress, film adhesion, process voltage, pressure, and RCF life. The UHV-RCF platform and vacuum chamber were constructed using off-the-shelf components and 88 RCF tests in high vacuum have been completed. Maximum RCF life was achieved by maintaining an ion flux between 10 13 to 1015 (cm-2 s-1) with a process voltage and pressure near 1.5 kV and 15 mTorr. Two controller schemes were investigated to maintain optimal plasma conditions for maximum RCF life: PID and LQR. Pressure disturbances to the plasma have a detrimental effect on RCF life. Control algorithms that mitigate pressure and voltage disturbances already exist. However, feedback from the plasma to detect disturbances has not been explored related to deposition processes in the thin-film science literature. Manometer based pressure monitoring systems have a 1 to 2 second delay time and are too slow to detect common pressure bursts during the deposition process. Plasma diagnostic feedback is much faster, of the order of 0.1 second. Plasma total-current feedback was used successfully to detect a typical pressure disturbance associated with the ion plating process. Plasma current is related to ion density and process pressure. A real-time control application was used to detect the pressure disturbance by monitoring plasma-total current and converting it to feedback-input to a pressure control system. Pressure overshoot was eliminated using a nominal PID controller with feedback from a plasma-current diagnostic measurement tool.

  5. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  6. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  7. Tribological behavior of in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films

    International Nuclear Information System (INIS)

    Guo Yanbao; Wang Deguo; Liu Shuhai

    2010-01-01

    Multilayer polyelectrolyte films containing silver ions were obtained by molecular deposition method on a glass plate or a quartz substrate. The in situ Ag nanoparticles were synthesized in the multilayer polyelectrolyte films which were put into fresh NaBH 4 aqueous solution. The structure and surface morphology of composite molecular deposition films were observed by UV-vis spectrophotometer, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Tribological characteristic was investigated by AFM and micro-tribometer. It was found that the in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films have lower coefficient of friction and higher anti-wear life than pure polyelectrolyte molecular deposition films.

  8. Controlled Mechanical Cracking of Metal Films Deposited on Polydimethylsiloxane (PDMS

    Directory of Open Access Journals (Sweden)

    Andreas Polywka

    2016-09-01

    Full Text Available Stretchable large area electronics conform to arbitrarily-shaped 3D surfaces and enables comfortable contact to the human skin and other biological tissue. There are approaches allowing for large area thin films to be stretched by tens of percent without cracking. The approach presented here does not prevent cracking, rather it aims to precisely control the crack positions and their orientation. For this purpose, the polydimethylsiloxane (PDMS is hardened by exposure to ultraviolet radiation (172 nm through an exposure mask. Only well-defined patterns are kept untreated. With these soft islands cracks at the hardened surface can be controlled in terms of starting position, direction and end position. This approach is first investigated at the hardened PDMS surface itself. It is then applied to conductive silver films deposited from the liquid phase. It is found that statistical (uncontrolled cracking of the silver films can be avoided at strain below 35%. This enables metal interconnects to be integrated into stretchable networks. The combination of controlled cracks with wrinkling enables interconnects that are stretchable in arbitrary and changing directions. The deposition and patterning does not involve vacuum processing, photolithography, or solvents.

  9. Dense Fe cluster-assembled films by energetic cluster deposition

    International Nuclear Information System (INIS)

    Peng, D.L.; Yamada, H.; Hihara, T.; Uchida, T.; Sumiyama, K.

    2004-01-01

    High-density Fe cluster-assembled films were produced at room temperature by an energetic cluster deposition. Though cluster-assemblies are usually sooty and porous, the present Fe cluster-assembled films are lustrous and dense, revealing a soft magnetic behavior. Size-monodispersed Fe clusters with the mean cluster size d=9 nm were synthesized using a plasma-gas-condensation technique. Ionized clusters are accelerated electrically and deposited onto the substrate together with neutral clusters from the same cluster source. Packing fraction and saturation magnetic flux density increase rapidly and magnetic coercivity decreases remarkably with increasing acceleration voltage. The Fe cluster-assembled film obtained at the acceleration voltage of -20 kV has a packing fraction of 0.86±0.03, saturation magnetic flux density of 1.78±0.05 Wb/m 2 , and coercivity value smaller than 80 A/m. The resistivity at room temperature is ten times larger than that of bulk Fe metal

  10. Substrate heating measurements in pulsed ion beam film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J. [Los Alamos National Lab., NM (United States); Tallant, D.R. [Cornell Univ., Ithaca, NY (United States). Materials Science and Engineering Dept.; Thompson, M.O. [Sandia National Labs., Albuquerque, NM (United States)

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  11. Three-dimensional architecture hybrid perovskite solar cells using CdS nanorod arrays as an electron transport layer

    Science.gov (United States)

    Song, Zihang; Tong, Guoqing; Li, Huan; Li, Guopeng; Ma, Shuai; Yu, Shimeng; Liu, Qian; Jiang, Yang

    2018-01-01

    Three-dimensional (3D) architecture perovskite solar cells (PSCs) using CdS nanorod (NR) arrays as an electron transport layer were designed and prepared layer-by-layer via a physical-chemical vapor deposition (P-CVD) process. The CdS NRs not only provided a scaffold to the perovskite film, but also increased the interfacial contact between the perovskite film and electron transport layer. As an optimized result, a high power conversion efficiency of 12.46% with a short-circuit current density of 19.88 mA cm‑2, an open-circuit voltage of 1.01 V and a fill factor of 62.06% was obtained after 12 h growth of CdS NRs. It was four times the efficiency of contrast planar structure with a similar thickness. The P-CVD method assisted in achieving flat and voidless CH3NH3PbI3‑x Cl x perovskite film and binding the CdS NRs and perovskite film together. The different density of CdS NRs had obvious effects on light transmittance of 350–550 nm, the interfacial area and the difficulty of combining layers. Moreover, the efficient 1D transport paths for electrons and multiple absorption of light, which are generated in 3D architecture, were beneficial to realize a decent power conversion efficiency.

  12. Vacuum deposited polymer films: Past, present, and future applications

    Energy Technology Data Exchange (ETDEWEB)

    Affinito, J.; Martin, P.; Gross, M.; Bennett, W.

    1994-11-01

    Two extremely high rate processes have been developed for the vacuum deposition of polymer thin films. Dubbed the PML (for Polymer Multi-Layer) and LML (for Liquid Multi-Layer) processes, the PML technique was originally developed for the manufacture of polymer/aluminum surface mount capacitors while the LML method arose from a need to fabricate lithium polymer batteries. These processes have since been found to be compatible with most other vacuum deposition techniques in, integrated, in-line coating processes. Battelle has developed an extensive program, and a great deal of hardware, to pursue a wide variety of PML and LML applications which integrate these two process technologies with other, conventional, vacuum deposition methods. The historical development of the technologies is reviewed and the Battelle PML/LML facilities are described. Current Battelle work involving solar thermal control films, PML QWOTs, and polymer/metal high reflectors are also discussed. Battelle PML work that is just starting, involving non-linear optical materials/devices, lithium polymer battery fabrication, electrochromic devices, and polymer/oxide multilayers, is discussed as well.

  13. Harnessing Compositional Marangoni Flows in Depositing Nanoparticle Films

    Science.gov (United States)

    Majumder, Mainak; Pasquali, Matteo; Monash University/Rice University Team

    2012-11-01

    Attempts at depositing uniform films of nanoparticles by drop-drying have been frustrated by the ``coffee-stain'' effect, arising from the convective macroscopic flow into the solid-liquid-vapor contact line of a droplet. We have recently demonstrated that uniform deposition of nanoparticles from aqueous suspensions can be obtained by drying the droplet in an ethanol vapor atmosphere.(.).............(Majumder et al., 2012). This technique allows the particle-laden water droplets to spread on a variety of surfaces such as glass, silicon, mica, PDMS, and even Teflon® due to absorption of ethanol from the vapor. Visualization of droplet shape and internal flow shows initial droplet spreading and strong re-circulating flow during spreading and shrinkage. During the drying phase, the vapor is saturated in ethanol, leading to preferential evaporation of water at the contact line; thereby generating a surface tension gradient (or Marangoni forces) that drive a strong recirculating flow. We show that this method can be used for depositing catalyst nanoparticles for the growth of single-walled carbon nanotubes as well as to manufacture plasmonic films of well-spaced, unaggregated gold nanoparticles. MAJUMDER, M., RENDALL, C. S., PASQUALI, M. et al. 2012. Overcoming the ``Coffee-Stain'' Effect by Compositional Marangoni-Flow-Assisted Drop-Drying. J.Phys.Chem.B, 116, 6536-6542.

  14. Microstructure and chemical bonding of DLC films deposited on ACM rubber by PACVD

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Schenkel, M.; Pei, Y.T.; Sánchez-López, J.C.; Hosson, J.Th.M. De

    2011-01-01

    The microstructure and chemical bonding of DLC films prepared by plasma assisted chemical vapor deposition on acrylic rubber (ACM) are studied in this paper. The temperature variation produced by the ion impingement during plasma cleaning and subsequent film deposition was used to modify the film

  15. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  16. Effects of hot isostatic pressure on titanium nitride films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Carbonari M.J.

    2001-01-01

    Full Text Available Films of titanium nitride deposited by physical vapor deposition on 304 L stainless steel substrates were hot isostatic pressed (HIP under 150 MPa at 550 °C. To study the effects of this treatment on the microstructure of those films, X-ray diffraction analyses, Rutherford Backscattering spectroscopy, scanning electron microscopy, and atomic force microscopy were performed. Surface hardness, and roughness were also evaluated to characterize the TiN properties. The hot isostatic pressure leads to an increase of hardness for depths up to 0.1 mum and a crystallographic texture change from (111 to (200. The original TiN golden color turned to red after the treatment. An increase of the grain size has been observed for hot isostatic pressed samples, but the stoichiometry of the TiN film was determined to be 1:1 by RBS. The microstructure observed by atomic force microscopy indicated that the TiN film surface is smoother after the HIP treatment.

  17. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  18. Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

    1990-01-01

    Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

  19. Chemical solution deposition of CaCu 3 Ti 4 O 12 thin film

    Indian Academy of Sciences (India)

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron ...

  20. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; van Corbach, H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying

  1. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  2. Homogeneity analysis of sculptured thin films deposited in symmetric style through glancing angle deposition technique

    International Nuclear Information System (INIS)

    Wang Bin; Qi Hong-Ji; Sun Wei; He Jun; Zhao Jiao-Ling; Wang Hu; Hou Yong-Qiang

    2014-01-01

    The symmetric deposition technique is often used to improve the uniformity of sculptured thin film (STF). In this paper, optical properties of STF with the columnar angles ±β are analyzed theoretically, based on the characteristic matrix method for extraordinary waves. Then, the transmittances of uniformity monolayer and bilayer STF in symmetrical style are calculated to show the effect of the bilayer structure on the optical properties of STF. The inhomogeneity of STF is involved in analyzing the differences in transmittance and phase retardation between monolayer and bilayer STF deposited in symmetric style. The results show that optical homogeneity of STF can be improved by depositing in symmetric style at the normal incidence, but it is not the same case as the oblique incidence. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

    International Nuclear Information System (INIS)

    Purohit, Viswas; Mielczarski, Ela; Mielczarski, Jerzy A.; Akesso, Laurent

    2013-01-01

    A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O

  4. Deposition of silver nanoleaf film onto chemical vapor deposited diamond substrate and its application in surface-enhanced Raman scattering

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Jianwen [Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry and Graduate University of Chinese Academy of Sciences, No. 2, Beiyitiao, Zhong-guan-cun, Haidian District, Beijing, 100080 (China); College of Chemistry and Chemical Engineering, Jishou University, Jishou, Hunan Province, 416000 (China); Tian Ruhai [Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry and Graduate University of Chinese Academy of Sciences, No. 2, Beiyitiao, Zhong-guan-cun, Haidian District, Beijing, 100080 (China); Zhi Jinfang [Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry and Graduate University of Chinese Academy of Sciences, No. 2, Beiyitiao, Zhong-guan-cun, Haidian District, Beijing, 100080 (China)], E-mail: zhi-mail@mail.ipc.ac.cn

    2008-04-30

    An approach for simultaneously synthesizing and immobilizing silver nanoleaves (SNLs) on {gamma}-mercaptopropyltrimethyoxysilane (MPTS)-modified chemical vapor deposited (CVD) diamond film surface has been developed. As-grown diamond film surface was oxidized by exposing to UV irradiation in oxygen gas atmosphere, and then the oxygen-terminated diamond film was dipped into a methanol solution of MPTS to form a self-assembled MPTS monolayer on the diamond film surface. SNLs were then deposited on diamond film surfaces by an electroless process. The morphology of SNL film was characterized by scanning electron microscopy. The thickness of SNL layer deposited onto the CVD diamond substrate increased with increasing the deposition time and the formation mechanism of SNL films was also discussed. Their performance as surface-enhanced Raman scattering (SERS) substrates was evaluated by using rhodamine 6G (R6G) as the probe molecule. Compared with self-assembled silver nanoparticle film and silver film from the mirror reaction, the SERS signal of R6G was obviously improved on the SNL films.

  5. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  6. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  7. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  8. SEM and XPS study of layer-by-layer deposited polypyrrole thin films

    Science.gov (United States)

    Pigois-Landureau, E.; Nicolau, Y. F.; Delamar, M.

    1996-01-01

    Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3-4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces.

  9. SEM and XPS study of layer-by-layer deposited polypyrrole thin films

    International Nuclear Information System (INIS)

    Pigois-Landureau, E.; Nicolau, Y.F.; Delamar, M.

    1996-01-01

    Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3 endash 4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces. copyright 1996 American Institute of Physics

  10. Deposition of Nanostructured Thin Film from Size-Classified Nanoparticles

    Science.gov (United States)

    Camata, Renato P.; Cunningham, Nicholas C.; Seol, Kwang Soo; Okada, Yoshiki; Takeuchi, Kazuo

    2003-01-01

    Materials comprising nanometer-sized grains (approximately 1_50 nm) exhibit properties dramatically different from those of their homogeneous and uniform counterparts. These properties vary with size, shape, and composition of nanoscale grains. Thus, nanoparticles may be used as building blocks to engineer tailor-made artificial materials with desired properties, such as non-linear optical absorption, tunable light emission, charge-storage behavior, selective catalytic activity, and countless other characteristics. This bottom-up engineering approach requires exquisite control over nanoparticle size, shape, and composition. We describe the design and characterization of an aerosol system conceived for the deposition of size classified nanoparticles whose performance is consistent with these strict demands. A nanoparticle aerosol is generated by laser ablation and sorted according to size using a differential mobility analyzer. Nanoparticles within a chosen window of sizes (e.g., (8.0 plus or minus 0.6) nm) are deposited electrostatically on a surface forming a film of the desired material. The system allows the assembly and engineering of thin films using size-classified nanoparticles as building blocks.

  11. Preparation and characterization of ZnS thin films by the chemical bath deposition method (Conference Presentation)

    Science.gov (United States)

    Ando, Shizutoshi; Iwashita, Taisuke

    2017-06-01

    Nowadays, the conversion efficiency of Cu(In・Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD. In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films. The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80° for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80° for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

  12. Effects of filtered cathodic vacuum arc deposition (FCVAD) conditions on photovoltaic TiO2 films

    International Nuclear Information System (INIS)

    Aramwit, C.; Intarasiri, S.; Bootkul, D.; Tippawan, U.; Supsermpol, B.; Seanphinit, N.; Ruangkul, W.; Yu, L.D.

    2014-01-01

    Highlights: • Titanium dioxide films were synthesized using the FCVAD technique. • Various FCVAD conditions were tested. • The TiO 2 films were characterized. • The FCVAD condition effects on the film characteristics were studied. • The O 2 pressure had the most important effect on the film quality. - Abstract: Titanium dioxide (TiO 2 ) films for photovoltaic applications were synthesized using filtered cathodic vacuum arc deposition (FCVAD) technique. Various deposition conditions were tested for an optimal film formation. The conditions included the oxygen (O 2 ) pressure which was varied from a base pressure 10 −5 to 10 −4 , 10 −3 , 10 −2 and 10 −1 Torr, sample holder bias varied using 0 or −250 V, deposition time varied from 10, 20 to 30 min, and deposition distance varied from 1 to 3 cm. The deposited films were also annealed and compared with unannealed ones. The films under various conditions were characterized using optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy techniques. The film transparency increased and thickness decreased to a nanoscale with increasing of the O 2 pressure. The transparent deposited films contained stoichiometric titanium and oxygen under the medium O 2 pressure. The as-deposited films were TiO 2 containing some rutile but no anatase which needed annealing to form

  13. Pulsed laser deposition: A viable route for the growth of aluminum antimonide film

    Science.gov (United States)

    Das, S.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. K.

    2015-06-01

    Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures 773 K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak 725 nm ( 1.71 eV) and 803 nm ( 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at 151 cm-1 followed by two peaks located at 71 cm-1 and 116 cm-1 were also observed.

  14. Structural characterization of the nickel thin film deposited by glad technique

    Directory of Open Access Journals (Sweden)

    Potočnik J.

    2013-01-01

    Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

  15. CERN Document Server (CDS): Introduction

    CERN Multimedia

    CERN. Geneva; Costa, Flavio

    2017-01-01

    A short online tutorial introducing the CERN Document Server (CDS). Basic functionality description, the notion of Revisions and the CDS test environment. Links: CDS Production environment CDS Test environment  

  16. X-ray analysis of texture domains in nonhomogeneous thin films deposited by physical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scardi, P.; Leoni, M.; D' Incau, M

    2004-11-22

    CaO-stabilised zirconia thin films were deposited by r.f. magnetron sputtering (MS) on <111> Si substrates. The lack of epitaxial relationships between substrate and thin film, together with the competitive growth processes active during the low-temperature deposition, led to a nonhomogeneous microstructure. Transmission electron microscopy (TEM) pictures show the presence of two layers whose relative thickness depends on the deposition time: an interface layer made of small, equiaxial grains and a top layer made of larger columnar grains. X-ray diffraction (XRD) pole figures and {theta}/2{theta}-{psi} maps point out the presence of a fibre texture with two axes, along [111] and tilted {approx}14 deg. to the [111] direction, attributed to interface and top layer, respectively. The integrated intensity of the (111) reflection of cubic Ca-stabilised zirconia (CaSZ) as a function of the {psi}-tilt angle (obtained both from laboratory data and from synchrotron radiation data) was analysed by means of a model based on the different absorption effects of the two layers. Layer thickness values obtained by the modelling are in good agreement with TEM observation and are consistent with the assumed growth mechanism.

  17. Plasma deposited diamond-like carbon films for large neutralarrays

    Energy Technology Data Exchange (ETDEWEB)

    Brown, I.G.; Blakely, E.A.; Bjornstad, K.A.; Galvin, J.E.; Monteiro, O.R.; Sangyuenyongpipat, S.

    2004-07-15

    To understand how large systems of neurons communicate, we need to develop methods for growing patterned networks of large numbers of neurons. We have found that diamond-like carbon thin films formed by energetic deposition from a filtered vacuum arc carbon plasma can serve as ''neuron friendly'' substrates for the growth of large neural arrays. Lithographic masks can be used to form patterns of diamond-like carbon, and regions of selective neuronal attachment can form patterned neural arrays. In the work described here, we used glass microscope slides as substrates on which diamond-like carbon was deposited. PC-12 rat neurons were then cultured on the treated substrates and cell growth monitored. Neuron growth showed excellent contrast, with prolific growth on the treated surfaces and very low growth on the untreated surfaces. Here we describe the vacuum arc plasma deposition technique employed, and summarize results demonstrating that the approach can be used to form large patterns of neurons.

  18. Liquid phase deposition of silica: Thin films, colloids and fullerenes

    Science.gov (United States)

    Whitsitt, Elizabeth A.

    Little research has been done to explore liquid phase deposition (LPD) of silica on non-planar substrates. This thesis proves that the seeded growth of silica colloids from fullerene and surfactant micelles is possible via LPD, as is the coating of individual single walled carbon nanotubes (SWNTs) and carbon fibers. Working on the premise that a molecular growth mechanism (versus colloidal/gel deposition) is valid for LPD, nanostructured substrates and specific chemical functional groups should act as "seeds," or templates, for silica growth. Seeded growth is confirmed by reactions of the growth solution with a range of surfactants and with materials with distinctive surface moieties. LPD promises lower production costs and environmental impact as compared to present methods of coating technology, because it is an inherently simple process, using low temperatures and inexpensive air-stable reactants. Silica is ubiquitous in materials science. Its applications range from thixotropic additives for paint to gate dielectrics in the semiconductor industry. Nano-structured coatings and thin films are integral in today's electronics industry and will become more vital as the size of electronics shrinks. With the incorporation of nanoparticles in future devices, the ability to deposit quality coatings with finely tuned properties becomes paramount. The methods developed herein have applications in fabricating insulators for use in the future molecular scale electronics industry. Additionally, these silica nanoparticles have applications as templates for use in photonics and fuel cell membrane production and lend strength and durability to composites.

  19. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    Science.gov (United States)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  20. Lanthanum-oxide thin films deposited by plasma-enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eun-Joo; Ko, Myoung-Gyun; Kim, Beom-Yong; Park, Sang-Kyun; Kim, Heon-Do; Park, Jong-Wan [Hanyang University, Seoul (Korea, Republic of)

    2006-09-15

    Lanthanum oxide is suited as a gate oxide that can replace SiO{sub 2} due to its high dielectric constant with a band gap of 4.3 eV [1] and its thermal stability with silicon. In this work, La{sub 2}O{sub 3} thin films was performed on Si substrates by using plasma-enhanced atomic layer deposition with La(EtCp){sub 3} as the lanthanum precursor and O{sub 3} as the reactant gas. The fully saturated growth rate of lanthanum oxide films was 0.2 A/cycle at a plasma power of 500 W. Secondary ion mass spectrometry and Rutherford backscattering measurements detected no carbon impurity content.

  1. Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD

    International Nuclear Information System (INIS)

    Miyajima, Shinsuke; Yamada, Akira; Konagai, Makoto

    2006-01-01

    Aluminum-doped hydrogenated microcrystalline cubic silicon carbide (Al-doped μc-3C-SiC:H) films were successfully deposited by hot wire chemical vapor deposition using a gas mixture of monomethylsilane, hydrogen and trimethylaluminum (TMA). Deposition rate and infrared absorption measurements indicate that radicals generated from TMA extract hydrogen atoms from the growing surface of the films. Infrared absorption and secondary ion mass spectroscopy measurements suggest the existence of Al-H complexes in the deposited film. The dark conductivity was found to be below 10 - 7 S/cm for as-deposited films and 10 - 6 -10 - 4 S/cm for annealed films. Our studies indicate the possibility of forming p-type μc-3C-SiC:H films on glass substrates at process temperature below 400 deg. C

  2. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  3. Characterization of polydopamine thin films deposited at short times by autoxidation of dopamine.

    Science.gov (United States)

    Zangmeister, Rebecca A; Morris, Todd A; Tarlov, Michael J

    2013-07-09

    Current interest in melanin films derived from the autoxidation of dopamine stems from their use as a universal adhesion layer. Here we report chemical and physical characterization of polydopamine films deposited on gold surfaces from stirred basic solutions at times ranging from 2 to 60 min, with a focus on times ≤10 min. Data from Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), and electrochemical methods suggest the presence of starting (dopamine) and intermediate (C=N-containing tautomers of quinone and indole) species in the polydopamine films at all deposition times. A uniform overlayer analysis of the XPS data indicates that film thickness increased linearly at short deposition times of ≤10 min. At deposition times ≥10 min, the films appeared largely continuous with surface roughness ≈ ≤ 2 nm, as determined by atomic force microscopy (AFM). Pinhole-free films, as determined by anionic redox probe measurements, required deposition times of 60 min or greater.

  4. Optimised In2S3 Thin Films Deposited by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Hristina Spasevska

    2012-01-01

    Full Text Available Indium sulphide has been extensively investigated as a component for different kind of photovoltaic devices (organic-inorganic hybrid devices, all inorganic, dye sensitized cells. In this paper, we have optimised the growth conditions of indium sulphide thin films by means of a low cost, versatile deposition technique, like spray pyrolysis. The quality of the deposited films has been characterised by micro-Raman, vis-UV spectroscopy, and atomic force microscopy. Substrate deposition temperature and different postdeposition annealing conditions have been investigated in order to obtain information about the quality of the obtained compound (which crystalline or amorphous phases are present and the morphology of the deposited films. We have shown that the deposition temperature influences strongly the amount of amorphous phase and the roughness of the indium sulphide films. Optimised postdeposition annealing treatments can strongly improve the final amount of the beta phase almost independently from the percentage of the amorphous phase present in the as deposited films.

  5. Vapor deposition of polystyrene thin films by intense laser vibrational excitation

    DEFF Research Database (Denmark)

    Bubb, D.M.; Papantonakis, M.R.; Horwitz, J.S.

    2002-01-01

    Polystyrene films were deposited using resonant infrared pulsed laser depositions (RIR-PLD). Thin films were grown on Si(1 1 1) wafers and NaCl substrates and analyzed by Fourier transform infrared spectroscopy (FTIR) and gel permeation chromatography (GPC). The depositions were carried out...... in vacuum (10(-4)-10(-5) Torr) at wavelengths 3.28, 3.30, 3.42 and 3.48 mum which are resonant with CH2 stretching modes in the polymer. We also attempted to deposit a films using non-resonant infrared (RIR) excitation (2.90 mum). At this wavelength no films were deposited, and evidence for laser......-induced damage to the target can be seen. RIR-PLD is a fundamentally new approach to polymer thin film growth as the absorption of radiation resonant with vibrational modes allow the energy to be deposited into the polymer and transfers between macromolecules in such a way as to promote efficient, non...

  6. AFM investigation and optical band gap study of chemically deposited PbS thin films

    Science.gov (United States)

    Zaman, S.; Mansoor, M.; Abubakar; Asim, M. M.

    2016-08-01

    The interest into deposition of nanocrystalline PbS thin films, the potential of designing and tailoring both the topographical features and the band gap energy (Eg) by controlling growth parameters, has significant technological importance. Nanocrystalline thin films of lead sulfide were grown onto glass substrates by chemical bath deposition (CBD) method. The experiments were carried out by varying deposition temperature. We report on the modification of structural and optical properties as a function of deposition temperature. The morphological changes of the films were analyzed by using SEM and AFM. AFM was also used to calculate average roughness of the films. XRD spectra indicated preferred growth of cubic phase of PbS films in (200) direction with increasing deposition time. Optical properties have been studied by UV-Spectrophotometer. From the diffused reflectance spectra we have calculated the optical Eg shift from 0.649-0.636 eV with increasing deposition time.

  7. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-08

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films.

  8. Metal-doped diamond-like carbon films synthesized by filter-arc deposition

    International Nuclear Information System (INIS)

    Weng, K.-W.; Chen, Y.-C.; Lin, T.-N.; Wang, D.-Y.

    2006-01-01

    Diamond-like carbon (DLC) thin films are extensively utilized in the semiconductor, electric and cutting machine industries owing to their high hardness, high elastic modulus, low friction coefficients and high chemical stability. DLC films are prepared by ion beam-assisted deposition (BAD), sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), cathodic arc evaporation (CAE), and filter arc deposition (FAD). The major drawbacks of these methods are the degraded hardness associated with the low sp 3 /sp 2 bonding ratio, the rough surface and poor adhesion caused by the presence of particles. In this study, a self-developed filter arc deposition (FAD) system was employed to prepare metal-containing DLC films with a low particle density. The relationships between the DLC film properties, such as film structure, surface morphology and mechanical behavior, with variation of substrate bias and target current, are examined. Experimental results demonstrate that FAD-DLC films have a lower ratio, suggesting that FAD-DLC films have a greater sp 3 bonding than the CAE-DLC films. FAD-DLC films also exhibit a low friction coefficient of 0.14 and half of the number of surface particles as in the CAE-DLC films. Introducing a CrN interfacial layer between the substrate and the DLC films enables the magnetic field strength of the filter to be controlled to improve the adhesion and effectively eliminate the contaminating particles. Accordingly, the FAD system improves the tribological properties of the DLC films

  9. Physical Properties of the Al{sub 2}O{sub 3} Thin Films Deposited by Atomic Layer Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.B.; Kwon, D.R.; Lee, C.M. [Inha University, Inchon (Korea); Oh, K.Y. [Jusung Engineering Co., Ltd., Kwangju (Korea)

    2002-06-01

    Al{sub 2}O{sub 3} is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since OH{sup -} radical in Al{sub 2}O{sub 3} films deposited by ALD using TMA and H{sub 2}O degrades the good properties of Al{sub 2}O{sub 3}, TMA and O{sub 3} were used to deposite Al{sub 2}O{sub 3} films and the effects of O{sub 3} on the properties of the Al{sub 2}O{sub 3} films were investigated. The growth rate of the Al{sub 2}O{sub 3} film under the optimum condition was 0.85 A / cycle. According to the XPS analysis results of the OH{sup -} concentration in the Al{sub 2}O{sub 3} film deposited using O{sub 3} is lower than that using H{sub 2}O. RBS analysis results indicate the chemical formula of the film is Al{sub 2.2}O{sub 2.8}. The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the Al{sub 2}O{sub 3} film deposited by ALD using O{sub 3} is nearly 100%. (author). 19 refs., 10 figs., 2 tabs.

  10. Low temperature phase selective deposition of MnS films

    Science.gov (United States)

    Sivakumar, R.; Dhandayuthapani, T.; Girish, M.; Sanjeeviraja, C.

    2017-05-01

    Rock salt α-MnS, Wurzite γ-MnS and mixed metastable MnS films have been successfully synthesized by chemical bath deposition method at relatively low temperature. The formation of rock salt α-MnS, wurzite γ-MnS and metastable MnS were confirmed by X-ray diffraction. Raman analysis revealed a peak at 580 cm-1 for α-MnS, 612 cm-1 for γ-MnS and 650 cm-1 for metastable MnS. α-MnS and metastable MnS exhibit a strong blue emission, whereas, γ-MnS exhibit strong yellow emission as observed from PL study.

  11. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  12. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  13. Simulation and growing study of Cu–Al–S thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duclaux, L., E-mail: loraine-externe.duclaux@edf.fr [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France); Donsanti, F.; Vidal, J. [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France); Bouttemy, M. [Lavoisier Institute of Versailles, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles cedex (France); Schneider, N.; Naghavi, N. [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France)

    2015-11-02

    In this paper, we have explored the potential of Cu–Al–S compounds as p-type transparent conducting material by means of atomistic simulation using CuAlS{sub 2} as a reference ternary compound and atomic layer deposition (ALD) growth. We have identified key intrinsic point defects acting either as shallow acceptor or deep donor which define the conductivity of CuAlS{sub 2}. Higher p-type conductivity was found to be achievable under metal-poor and chalcogen-rich growth conditions. According to this precept, ALD growth of Cu{sub x}Al{sub y}S{sub z} was attempted using Cu(acac){sub 2} and Al(CH{sub 3}){sub 3} as precursors for Cu and Al respectively and under H{sub 2}S atmosphere. While as grown thin films present low content of Al, it influences the band gap values as well as the obtained structures. - Highlights: • Ab-initio investigation of CuAlS{sub 2} • Indentification of two opposite main-contributive intrinsic defects on the conductivity: V{sub Cu} and Al{sub Cu} • Synthesis of Cu-Al-S ternary compound using atomic layer deposition • Impact of aluminum insertion on the optical and structural properties of the films.

  14. Deposition and characterization of ITO films produced by laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

    2002-01-01

    Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

  15. Deposition Mechanism of Aluminum Oxide on Quantum Dot Films at Atmospheric Pressure and Room Temperature

    NARCIS (Netherlands)

    Valdesueiro Gonzalez, D.; Prabhu, M.K.; Guerra Nunez, C.R.; Sandeep, C. S Suchand; Kinge, S.S.; Siebbeles, L.D.A.; de Smet, L.C.P.M.; Meesters, G.M.H.; Kreutzer, M.T.; Houtepen, A.J.; van Ommen, J.R.

    2016-01-01

    Stability of quantum dot (QD) films is an issue of concern for applications in devices such as solar cells, LEDs, and transistors. This paper analyzes and optimizes the passivation of such QD films using gas-phase deposition, resulting in enhanced stability. Crucially, we deposited alumina at

  16. State of the art in thin film thickness and deposition rate monitoring sensors

    International Nuclear Information System (INIS)

    Buzea, Cristina; Robbie, Kevin

    2005-01-01

    In situ monitoring parameters are indispensable for thin film fabrication. Among them, thickness and deposition rate control are often the most important in achieving the reproducibility necessary for technological exploitation of physical phenomena dependent on film microstructure. This review describes the types of thickness and deposition rate sensors and their theoretical and phenomenological background, underlining their performances, as well as advantages and disadvantages

  17. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    International Nuclear Information System (INIS)

    Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

    2007-01-01

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters

  18. Water-Assisted Vapor Deposition of PEDOT Thin Film.

    Science.gov (United States)

    Goktas, Hilal; Wang, Xiaoxue; Ugur, Asli; Gleason, Karen K

    2015-07-01

    The synthesis and characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) using water-assisted vapor phase polymerization (VPP) and oxidative chemical vapor deposition (oCVD) are reported. For the VPP PEDOT, the oxidant, FeCl3 , is sublimated onto the substrate from a heated crucible in the reactor chamber and subsequently exposed to 3,4-ethylenedioxythiophene (EDOT) monomer and water vapor in the same reactor. The oCVD PEDOT was produced by introducing the oxidant, EDOT monomer, and water vapor simultaneously to the reactor. The enhancement of doping and crystallinity is observed in the water-assisted oCVD thin films. The high doping level observed at UV-vis-NIR spectra for the oCVD PEDOT, suggests that water acts as a solubilizing agent for oxidant and its byproducts. Although the VPP produced PEDOT thin films are fully amorphous, their conductivities are comparable with that of the oCVD produced ones. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Deposition and consolidation of porous ceramic films for membrane separation

    DEFF Research Database (Denmark)

    Elmøe, Tobias Dokkedal; Tricoli, Antonio; Johannessen, Tue

    The deposition of porous ceramic films for membrane separation can be done by several processes such as thermophoresis [1], dip-coating [2] and spray pyrolysis [3]. Here we present a high-speed method, in which ceramic nano-particles form a porous film by filtration on top of a porous ceramic...... substrate [4]. Ceramic nano-particles are generated in a flame, using either a premixed (gas) flame, in which a metal-oxide precursor is evaporated in an N2 stream, which is combusted with methane and air, or using a flame spray pyrolysis, in which a liquid metal-oxide precursor is sprayed through a nozzle.......E., Sahm, T., Gurlo, A., Barsan, N., Weimar, U., Sensors and Actuators B, 114, 283-295, 2006 [2] Cini, P., Blaha, S.R., Harold, M.P., Venkataraman, K., J. Membrane Sci., 55, 199-225, 1991 [3] Stoermer, A.O., Rupp, J.L.M., Gauckler, L.J., Solid State Ionics, In press, 2006 [4] Andersen, S.K., Johannessen, T...

  20. Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Sun, Ye; Canulescu, Stela; Sun, Peijie

    2011-01-01

    Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h...... by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films....

  1. Rare earth-doped alumina thin films deposited by liquid source CVD processes

    Energy Technology Data Exchange (ETDEWEB)

    Deschanvres, J.L.; Meffre, W.; Joubert, J.C.; Senateur, J.P. [Ecole Nat. Superieure de Phys. de Grenoble, St. Martin d`Heres (France). Lab. des Materiaux et du Genie Phys.; Robaut, F. [Consortium des Moyens Technologiques Communs, Institut National Polytechnique de Grenoble, BP 75, 38402 St Martin d`Heres (France); Broquin, J.E.; Rimet, R. [Laboratoire d`Electromagnetisme, Microondes et Optoelectronique, CNRS-Ecole Nationale Superieure d`Electronique et Radioelectricite de Grenoble, BP 257, 38016 Grenoble, Cedex (France)

    1998-07-24

    Two types of liquid-source CVD processes are proposed for the growth of rare earth-doped alumina thin films suitable as amplifying media for integrated optic applications. Amorphous, transparent, pure and erbium- or neodymium-doped alumina films were deposited between 573 and 833 K by atmospheric pressure aerosol CVD. The rare earth doping concentration increases by decreasing the deposition temperature. The refractive index of the alumina films increases as a function of the deposition temperature from 1.53 at 573 K to 1.61 at 813 K. Neodymium-doped films were also obtained at low pressure by liquid source injection CVD. (orig.) 7 refs.

  2. Microstructure map for self-organized phase separation during film deposition.

    Science.gov (United States)

    Lu, Yong; Wang, Cuiping; Gao, Yipeng; Shi, Rongpei; Liu, Xingjun; Wang, Yunzhi

    2012-08-24

    Drastically different two-phase microstructures have been reported for alloy epitaxial films, including self-organized nanoscale concentration modulations of vertical and lateral stripes. To understand the disparity of these microstructures, we study their formation mechanisms via spinodal decomposition during film deposition with the aid of computer simulations. Based on the simulation results, a microstructure map is established that describes relationships among the morphology of self-organized two-phase microstructure, initial alloy composition, and deposition rate relative to the phase separation kinetics in the film. Depending on the deposition rate relative to the kinetics of spinodal decomposition in the film, both laterally and vertically modulated microstructures could be obtained.

  3. Nanocrystalline CdS{sub 1−x}Se{sub x} alloys as thin films prepared by chemical bath deposition: Effect of x on the structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: mhernandezp0606@ipn.mx [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Rangel-Salinas, E. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico)

    2014-12-05

    Highlights: • CdS1−xSe{sub x} films with tunable structural and optical properties were grown by CBD. • Thin films are composed by a solid solution of the CdS{sub 1−x}Se{sub x} ternary alloy. • Crystal size, band gap and photoluminescence signal, decrease with the composition. • Ternary alloys show hexagonal phase with preferential orientation on (0 0 2) plane. • Films with x ⩾ 0.5 show semi-spherical grains composed by nanoworms structures. - Abstract: CdS{sub 1−x}Se{sub x} thin films were deposited on Corning glass substrates at 75 °C by chemical bath deposition (CBD) varying the composition “x” from 0 to 1 at a constant deposition time of 120 min. The composition of the films was adjusted by modifying the concentration as well as the ratio of the precursors. The morphological, compositional, structural and optical properties of the films were analyzed using several techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), UV–Vis Spectroscopy (UV–Vis) and Photoluminescence (PL). The films grow as layers following the ion by ion mechanism, the density of the films decreases with x. Films are constituted by clusters (100–600 nm in diameter) of semispherical particles with sizes fluctuating from 10 to 20 nm. For x ⩾ 0.5 the particles are well-arranged in a “worm-like” structure. All the films are polycrystalline, to x = 0 (CdS) the cubic phase is present, the increase of composition promotes the formation of hexagonal phase or a mixture of both cubic and hexagonal phases. Preferential orientation in the (1 0 0) or (0 0 2) plane is observed. The crystal size decreases from 20 to 6 nm when x is increased. The optical properties can be easily tuned by adjusting the composition. Optical absorption analysis shows that the band gap (E{sub g}) value shifts to red in function of x (from 2.47 to 1.99 eV). Photoluminescence signal changes as “x” varies showing a regular behavior

  4. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  5. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  6. Deposition and Characterization of Thin Films on Metallic Substrates

    Science.gov (United States)

    Gatica, Jorge E.

    2005-01-01

    A CVD method was successfully developed to produce conversion coatings on aluminum alloys surfaces with reproducible results with a variety of precursors. A well defined protocol to prepare the precursor solutions formulated in a previous research was extended to other additives. It was demonstrated that solutions prepared following such a protocol could be used to systematically generate protective coatings onto aluminum surfaces. Experiments with a variety of formulations revealed that a refined deposition protocol yields reproducible conversion coatings of controlled composition. A preliminary correlation between solution formulations and successful precursors was derived. Coatings were tested for adhesion properties enhancement for commercial paints. A standard testing method was followed and clear trends were identified. Only one precursors was tested systematically. Anticipated work on other precursors should allow a better characterization of the effect of intermetallics on the production of conversion/protective coatings on metals and ceramics. The significance of this work was the practical demonstration that chemical vapor deposition (CVD) techniques can be used to systematically generate protective/conversion coating on non-ferrous surfaces. In order to become an effective approach to replace chromate-based pre- treatment processes, namely in the aerospace or automobile industry, the process parameters must be defined more precisely. Moreover, the feasibility of scale-up designs necessitates a more comprehensive characterization of the fluid flow, transport phenomena, and chemical kinetics interacting in the process. Kinetic characterization showed a significantly different effect of magnesium-based precursors when compared to iron-based precursors. Future work will concentrate on refining the process through computer simulations and further experimental studies on the effect of other transition metals to induce deposition of conversion/protective films

  7. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  8. Fracture Analysis of MWCNT/Epoxy Nanocomposite Film Deposited on Aluminum Substrate.

    Science.gov (United States)

    Her, Shiuh-Chuan; Chien, Pao-Chu

    2017-04-13

    Multi-walled carbon nanotube (MWCNT) reinforced epoxy films were deposited on an aluminum substrate by a hot-pressing process. Three-point bending tests were performed to determine the Young's modulus of MWCNT reinforced nanocomposite films. Compared to the neat epoxy film, nanocomposite film with 1 wt % of MWCNT exhibits an increase of 21% in the Young's modulus. Four-point-bending tests were conducted to investigate the fracture toughness of the MWCNT/epoxy nanocomposite film deposited on an aluminum substrate with interfacial cracks. Based on the Euler-Bernoulli beam theory, the strain energy in a film/substrate composite beam is derived. The difference of strain energy before and after the propagation of the interfacial crack are calculated, leading to the determination of the strain energy release rate. Experimental test results show that the fracture toughness of the nanocomposite film deposited on the aluminum substrate increases with the increase in the MWCNT content.

  9. Reactive pulsed laser deposition of thin molybdenum- and tungsten-nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Bereznai, M. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: bereznai@physx.u-szeged.hu; Toth, Z. [Research Group on Laser Physics of the Hungarian Academy of Sciences, H-6720 Szeged, Dom ter 9 (Hungary); Caricato, A.P. [INFM and Dipartimento di Fisica, Universita di Lecce, 73100 Lecce (Italy); Fernandez, M. [INFM and Dipartimento di Fisica, Universita di Lecce, 73100 Lecce (Italy); Luches, A. [INFM and Dipartimento di Fisica, Universita di Lecce, 73100 Lecce (Italy); Majni, G. [INFM and Dipartimento di Fisica ed Ingegneria dei Materiali e del Territorio, Universita Politecnica delle Marche, 60131 Ancona (Italy); Mengucci, P. [INFM and Dipartimento di Fisica ed Ingegneria dei Materiali e del Territorio, Universita Politecnica delle Marche, 60131 Ancona (Italy); Nagy, P.M. [Department of General Physics, Lorand Eoetvoes University, H-1518 Budapest, POB 32 (Hungary); Juhasz, A. [Department of General Physics, Lorand Eoetvoes University, H-1518 Budapest, POB 32 (Hungary); Nanai, L. [Department of Physics, University of Szeged JGYTF, H-6720 Szeged (Hungary)

    2005-02-01

    In this work reactive pulsed laser deposition of molybdenum- and tungsten-nitride thin films is investigated. Metallic targets were ablated in low-pressure (1, 10 and 100 Pa) nitrogen atmosphere by KrF excimer laser pulses (fluence {approx}6.5 J/cm{sup 2}). Films were deposited on silicon wafers heated to {approx}25, 250 and 500 deg. C. The characteristics of the films strongly depend on the N{sub 2} pressure. By increasing N{sub 2} pressure, the nitrogen content increases in the films, which leads to a monotonous increase of the electrical resistivity. Deposition rate decreases at 100 Pa as indicated by Rutherford backscattering spectrometry. At this pressure, hardness of the films significantly decreases also, as shown by microhardness measurements. X-ray diffractometry shows that films crystallinity is improved by increasing the substrate temperature. In addition, atomic force microscopy (AFM) and scanning electron microscopy (SEM) were applied for visualising the film surface.

  10. Optical and structural characterization of pulsed laser deposited ruby thin films for temperature sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, Satchi [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Khare, Alika, E-mail: alika@iitg.ernet.in [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Epitaxial ruby thin film is deposited on sapphire substrate. Black-Right-Pointing-Pointer The PL spectra for R lines show highly crystalline stress free film with FWHM of 11.4 cm{sup -1}. Black-Right-Pointing-Pointer PLD ruby thin film can be used as photonics based temperature sensor. - Abstract: The ruby thin films were deposited by pulsed laser deposition (PLD) technique in an atmosphere of oxygen using ruby pellet, indigenously prepared by mixing Al{sub 2}O{sub 3} and Cr{sub 2}O{sub 3} in appropriate proportion. The characteristics R{sub 1} and R{sub 2} lines at 694.2 nm and 692.7 nm in the photoluminescence spectra of target pellet as well as that of PLD thin films, confirmed the ruby phase in both. The XRD and Raman spectra confirmed deposition of c-axis oriented crystalline ruby thin film on sapphire substrate. Effect of deposition time, substrate and deposition temperature on PLD grown thin films of ruby are reported. The intensity of R{sub 1} and R{sub 2} lines of PLD ruby thin films increased enormously after annealing the film at 1000 Degree-Sign C for 2 h. The film deposited on sapphire substrate for 2 h was 260 nm thick and the corresponding deposition rate was 2.16 nm/min. This film was subjected to temperature dependent photoluminescence studies. The peak positions of R{sub 1} and R{sub 2} lines and corresponding line width of PLD ruby thin film were observed to be blue shifted with decrease in temperature. R{sub 1} line position sensitivity, d{nu}{sup Macron }/dT, cm{sup -1}/K in the range 138-368 K was very well fitted to linear fit and hence can be used as temperature sensor in this range.

  11. New results in pulsed laser deposition of poly-methyl-methacrylate thin films

    International Nuclear Information System (INIS)

    Cristescu, R.; Socol, G.; Mihailescu, I.N.; Popescu, M.; Sava, F.; Ion, E.; Morosanu, C.O.; Stamatin, I.

    2003-01-01

    Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition

  12. A Review of Metalorganic Chemical Vapor Deposition of High-Temperature Superconducting Thin Films

    Science.gov (United States)

    Erbil, Ahmet; Zhang, K.; Kwak, B. S.; Boyd, E. P.

    1990-03-01

    A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.

  13. Characterization of photoluminescent europium doped yttrium oxide thin-films prepared by metallorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    McKittrick, J.; Bacalski, C.F.; Hirata, G.A.; Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M.

    1998-01-01

    Europium doped yttrium oxide, (Y 1-x Eu x ) 2 O 3 , thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y 2 O 3 , grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y 2 O 3 :Eu 3+ was observed in x-ray diffraction for deposition temperatures ≥600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra

  14. Electrophoretic deposition of composite halloysite nanotube–hydroxyapatite–hyaluronic acid films

    Energy Technology Data Exchange (ETDEWEB)

    Deen, I. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L7 (Canada); Zhitomirsky, I., E-mail: zhitom@mcmaster.ca [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L7 (Canada)

    2014-02-15

    Highlights: ► Composite halloysite nanotubes–hydroxyapatite–hyaluronic acid films were prepared. ► Electrophoretic deposition method was used for deposition. ► Natural hyaluronic acid was used as a dispersing, charging and film forming agent. ► Film composition and deposition yield can be varied. ► The films can be used for biomedical implants with controlled release of drugs. -- Abstract: Electrophoretic deposition method has been developed for the deposition of biocomposite films containing halloysite nanotubes (HNTs), hydroxyapatite (HA) and hyaluronic acid. The method is based on the use of natural hyaluronate biopolymer as a dispersing and charging agent for HNT and HA and film forming agent for the fabrication of the composite films. The deposition kinetics was studied by the quartz crystal microbalance method. The composite films were studied by X-ray diffraction, thermogravimetric analysis, differential thermal analysis and electron microscopy. The composite films are promising materials for the fabrication of biomedical implants with advanced functional properties.

  15. Electrophoretic deposition of composite halloysite nanotube–hydroxyapatite–hyaluronic acid films

    International Nuclear Information System (INIS)

    Deen, I.; Zhitomirsky, I.

    2014-01-01

    Highlights: ► Composite halloysite nanotubes–hydroxyapatite–hyaluronic acid films were prepared. ► Electrophoretic deposition method was used for deposition. ► Natural hyaluronic acid was used as a dispersing, charging and film forming agent. ► Film composition and deposition yield can be varied. ► The films can be used for biomedical implants with controlled release of drugs. -- Abstract: Electrophoretic deposition method has been developed for the deposition of biocomposite films containing halloysite nanotubes (HNTs), hydroxyapatite (HA) and hyaluronic acid. The method is based on the use of natural hyaluronate biopolymer as a dispersing and charging agent for HNT and HA and film forming agent for the fabrication of the composite films. The deposition kinetics was studied by the quartz crystal microbalance method. The composite films were studied by X-ray diffraction, thermogravimetric analysis, differential thermal analysis and electron microscopy. The composite films are promising materials for the fabrication of biomedical implants with advanced functional properties

  16. Fabrication of nitrogen-containing diamond-like carbon film by filtered arc deposition as conductive hard-coating film

    Science.gov (United States)

    Iijima, Yushi; Harigai, Toru; Isono, Ryo; Imai, Takahiro; Suda, Yoshiyuki; Takikawa, Hirofumi; Kamiya, Masao; Taki, Makoto; Hasegawa, Yushi; Tsuji, Nobuhiro; Kaneko, Satoru; Kunitsugu, Shinsuke; Habuchi, Hitoe; Kiyohara, Shuji; Ito, Mikio; Yick, Sam; Bendavid, Avi; Martin, Phil

    2018-01-01

    Diamond-like carbon (DLC) films, which are amorphous carbon films, have been used as hard-coating films for protecting the surface of mechanical parts. Nitrogen-containing DLC (N-DLC) films are expected as conductive hard-coating materials. N-DLC films are expected in applications such as protective films for contact pins, which are used in the electrical check process of integrated circuit chips. In this study, N-DLC films are prepared using the T-shaped filtered arc deposition (T-FAD) method, and film properties are investigated. Film hardness and film density decreased when the N content increased in the films because the number of graphite structures in the DLC film increased as the N content increased. These trends are similar to the results of a previous study. The electrical resistivity of N-DLC films changed from 0.26 to 8.8 Ω cm with a change in the nanoindentation hardness from 17 to 27 GPa. The N-DLC films fabricated by the T-FAD method showed high mechanical hardness and low electrical resistivity.

  17. Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications

    International Nuclear Information System (INIS)

    Rim, Y.S.; Kim, H.J.; Kim, K.H.

    2010-01-01

    The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates using the facing targets sputtering (FTS) system. The electrical, optical and structural properties of the IZO thin films deposited as functions of sputtering parameters on the glass and PES substrates. An optimal IZO deposition condition is fabricated for organic light-emitting device (OLED) based on glass and PES. The amorphous IZO anode-based OLEDs show superior current density and luminance characteristics.

  18. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    OpenAIRE

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    Summary In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zin...

  19. Field emission characteristics of nano-structured carbon films deposited on differently pretreated Mo films

    International Nuclear Information System (INIS)

    Wang Longyang; Wang Xiaoping; Wang Lijun; Zhang Lei

    2008-01-01

    Nano-structured carbon films (NCFs) were grown on Mo layers by microwave plasma chemical vapor deposition (MPCVD) system. The Mo layers were deposited on ceramic substrates by electron beam deposition method and were pretreated by different techniques, which include ultrasonically scratching and laser-grooving technology (10 line/mm). NCFs were characterized by a field emission type scanning electron microscope (FE-SEM), Raman spectra and field emission (FE) I-V measurements. Effects of process parameters on morphologies, structures and FE properties of NCFs were examined. The experimental results show that two kinds of NCFs deposited at the same parameters employed for the MPCVD process were respectively composed of carbon nano-balls and reticular carbon nano-tubes inlayed by carbon nano-balls with dissimilar disorder structures, both NCFs showed each merits and exhibited good field emission properties, especially shown in the uniformity of FE, the uniform field emission images with areas of 4 cm 2 were obtained. Growth mechanism influenced by different pretreated method was discussed and the possible FE mechanisms of the NCFs were also investigated. Finally, the process characteristics of laser-grooving technology were analyzed, and its potential applications were predicted.

  20. Optical characterization of deposited ITO thin films on glass and PET substrates

    International Nuclear Information System (INIS)

    Elmas, Saliha; Korkmaz, Şadan; Pat, Suat

    2013-01-01

    This work focuses on fabrication, characterization and understanding some physical properties of transparent and conductive ITO thin films. ITO thin films were deposited onto glass and polyethylene terephthalate (PET) substrates by thermionic vacuum arc (TVA) technique. TVA is a different technology for thin film deposition. Thicknesses and refractive indices of the ITO thin films have been determined by spectroscopic ellipsometry (SE) technique using Cauchy model for fitting. SE is a novel, nondestructive and powerful technique to investigate the optical characteristics of materials. Especially thickness and optical constants are measuring this device. Transmittances, reflectance of ITO coated samples were measured by UV–vis spectrophotometer and interferometer, respectively. The optical method was used to determine the band gaps of ITO thin films. Surface morphologies of produced films were characterized by atomic force microscope (AFM) for surface topography and roughness of ITO thin films. Resistivity measurements show that produced films show semiconductor properties.

  1. Optical characterization of deposited ITO thin films on glass and PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Elmas, Saliha; Korkmaz, Şadan, E-mail: skorkmaz@ogu.edu.tr; Pat, Suat

    2013-07-01

    This work focuses on fabrication, characterization and understanding some physical properties of transparent and conductive ITO thin films. ITO thin films were deposited onto glass and polyethylene terephthalate (PET) substrates by thermionic vacuum arc (TVA) technique. TVA is a different technology for thin film deposition. Thicknesses and refractive indices of the ITO thin films have been determined by spectroscopic ellipsometry (SE) technique using Cauchy model for fitting. SE is a novel, nondestructive and powerful technique to investigate the optical characteristics of materials. Especially thickness and optical constants are measuring this device. Transmittances, reflectance of ITO coated samples were measured by UV–vis spectrophotometer and interferometer, respectively. The optical method was used to determine the band gaps of ITO thin films. Surface morphologies of produced films were characterized by atomic force microscope (AFM) for surface topography and roughness of ITO thin films. Resistivity measurements show that produced films show semiconductor properties.

  2. Optical characterization of deposited ITO thin films on glass and PET substrates

    Science.gov (United States)

    Elmas, Saliha; Korkmaz, Şadan; Pat, Suat

    2013-07-01

    This work focuses on fabrication, characterization and understanding some physical properties of transparent and conductive ITO thin films. ITO thin films were deposited onto glass and polyethylene terephthalate (PET) substrates by thermionic vacuum arc (TVA) technique. TVA is a different technology for thin film deposition. Thicknesses and refractive indices of the ITO thin films have been determined by spectroscopic ellipsometry (SE) technique using Cauchy model for fitting. SE is a novel, nondestructive and powerful technique to investigate the optical characteristics of materials. Especially thickness and optical constants are measuring this device. Transmittances, reflectance of ITO coated samples were measured by UV-vis spectrophotometer and interferometer, respectively. The optical method was used to determine the band gaps of ITO thin films. Surface morphologies of produced films were characterized by atomic force microscope (AFM) for surface topography and roughness of ITO thin films. Resistivity measurements show that produced films show semiconductor properties.

  3. n-type In2S3 films deposited by pulsed laser deposition: effect of laser power on the properties of the films

    Science.gov (United States)

    Wu, Chunyan; Mao, Dun; Liu, Zhu; Liang, Qi; Chen, Shirong; Yu, Yongqiang; Wang, Li; Luo, Linbao; Xu, Jun

    2015-05-01

    Pulsed laser deposition (PLD) with different levels of laser power was first used to deposit In2S3 films from homemade, high-purity In2S3 targets. This process was followed by post-annealing in an N2 atmosphere to improve the films’ crystallinity and conductivity. The annealed films were verified to be stoichiometric, body-centered, tetragonal In2S3 with the preferred orientation (103). The bandgap of the films decreased from 2.8 to 2.2 eV with an increase in the laser power, which was believed to be the result of the grain growth caused by the higher laser power. The electrical transport property of the bottom-gate field-effect transistor revealed the n-type conduction of the annealed In2S3 films, and the heterojunction p+-Si/annealed In2S3 film showed remarkable photovoltaic behavior upon light illumination, indicating that PLD-deposited In2S3 films may have great potential as a buffer layer in thin-film solar cells. What’s more, doped In2S3 films can be easily realized due to the fairly stoichiometric transfer of the PLD method.

  4. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  5. The spatial thickness distribution of metal films produced by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, Nini; Schou, Jørgen; Linderoth, Søren

    2007-01-01

    mm diameter positioned 80 turn from the target in vacuum. We have explored the distribution of deposited material on a stationary substrate from a fixed point of impact on the target relative to the substrate. In all cases the angular distribution of the deposited metal layers shows a distinct "flip......Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

  6. Underpotential deposition-mediated layer-by-layer growth of thin films

    Science.gov (United States)

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  7. Superhard PVD carbon films deposited with different gradients with and without additions of titanium and silicon

    International Nuclear Information System (INIS)

    Bauer, C.

    2003-10-01

    This work focusses on thin carbon-based films, deposited by magnetron sputtering with additional argon ion bombardment (0 eV to 800 eV) without extra adhesive layer on hard metal inserts. As one possibility of increasing the reduced adherence of hard carbon films the deposition of films with additions of titanium and silicon is studied. The aim of this work is to examine the influence of a modification of the transition between substrate and film by realizing three different types of deposition gradients. The pure carbon films are amorphous, the dominant network of atoms is formed by sp 2 bonded atoms. The amount of sp 3 bonded atoms is up to 30% and is influenced by the bombarding argon ion energy. Carbon films with additions of silicon are amorphous, only in films with a high amount of titanium (approx. 20 at%) nanocomposites of titanium carbide crystals with diameters of less than 5 nm in an amorphous carbon matrix were found. The mechanical properties and the behavior of single layer carbon films strongly depend on the argon ion energy. An increase of this energy leads to higher film hardness and higher residual stress and results in the delamination of superhard carbon films on hard metal substrates. The adhesion of single layer films for ion energies of more than 200 eV is significantly improved by additions of titanium and silicon, respectively. The addition of 23 at% silicon and titanium, respectively leads to a high reduction of the residual stress. In a non-reactive PVD process thin films were deposited with a continuously gradient in chemical composition. The results of the investigations of the films with two different concentrations of titanium and silicon, respectively show that carbon-based films with a good adhesion could be deposited. The combination of the two gradients in structure and properties and in chemical composition leads in the system with carbon and silicon carbide to hard and very adhesive films. Especially for carbon films with a high

  8. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  9. Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

    Science.gov (United States)

    Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

    2018-02-01

    The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

  10. Ammonia-free chemical bath method for deposition of microcrystalline cadmium selenide films

    International Nuclear Information System (INIS)

    Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    Chemical deposition of cadmium selenide (CdSe) films has been carried out from alkaline aqueous solution containing Cd 2+ and Se 2- ions. In general, the alkaline pH of the CdSe deposition bath has been adjusted by addition of liquid ammonia. However, the use of ammonia in large-scale chemical deposition method represents an environmental problem due to its volatility and toxicity. The volatility of ammonia changes the pH of deposition bath and results into irreproducible film properties. In the present paper, ammonia-free and weak alkaline (pH < 9.0) chemical method for cadmium selenide film has been developed. The cadmium selenide films are microcrystalline (grain size 0.5-0.7 μm) with hexagonal crystal structure. These films are photoactive and therefore, useful in photo conversion of light into electrical power

  11. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Velusamy, P.; Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Films Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli-620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Films Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur – 603 203, Tamil Nadu (India)

    2016-05-23

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300°C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  12. Effect of ablation parameters on infrared pulsed laser deposition of poly(ethylene glycol) films

    Science.gov (United States)

    Bubb, Daniel M.; Papantonakis, M. R.; Toftmann, B.; Horwitz, J. S.; McGill, R. A.; Chrisey, D. B.; Haglund, R. F., Jr.

    2002-06-01

    Polymer thin films were deposited by laser ablation using infrared radiation both resonant (2.90, 3.40, 3.45, and 8.96 mum) and nonresonant (3.30, 3.92, and 4.17 mum) with vibrational modes in the starting material, polyethylene glycol. The chemical structure of the films was characterized by Fourier transform infrared spectroscopy, while the molecular weight distribution was investigated using gel permeation chromatography. The films deposited by resonant irradiation are superior to those deposited with nonresonant radiation with respect to both the chemical structure and the molecular weight distribution of the films. However, the molecular-weight distributions of films deposited at nonresonant infrared wavelengths show marked polymer fragmentation. Fluence and wavelength dependence studies show that the effects may be related to the degree of thermal confinement, and hence to the relative absorption strengths of the targeted vibrational modes.

  13. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  14. HRTEM Microstructural Characterization of ?-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering

    OpenAIRE

    Faudoa-Arzate, A.; Arteaga-Dur?n, A.; Saenz-Hern?ndez, R.J.; Botello-Zubiate, M.E.; Realyvazquez-Guevara, P.R.; Matutes-Aquino, J.A.

    2017-01-01

    Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400...

  15. Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

    CERN Document Server

    Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

    2003-01-01

    Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

  16. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1, 35042 Rennes Cedex (France); Dussauze, M. [ISM, UMR-CNRS 5255, Université de Bordeaux, 33400 Talence (France); Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H. [Equipe Verres et Céramiques, UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1, 35042 Rennes Cedex (France)

    2013-03-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe{sub 4}], eventually [GaTe{sub 4}] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga{sub 10}Ge{sub 15}Te{sub 75}. This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe{sub 4}, eventually GaTe{sub 4} tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga{sub 10}Ge{sub 15}Te{sub 75}.

  17. Safe Haven CDS Premiums

    DEFF Research Database (Denmark)

    Klingler, Sven; Lando, David

    Credit Default Swaps can be used to lower capital requirements of dealer banks who enter into uncollateralized derivatives positions with sovereigns. We show in a model that the regulatory incentive to obtain capital relief makes CDS contracts valuable to dealer banks and empirically that......, consistent with the use of CDS for regulatory purposes, there is a disconnect between changes in bond yield spreads and in CDS premiums especially for safe sovereigns. Additional empirical tests related to volumes of contracts outstanding, effects of regulatory proxies, and the corporate bond and CDS markets...

  18. EPD-deposited ZnO thin films: a review

    Directory of Open Access Journals (Sweden)

    Verde, M.

    2014-08-01

    Full Text Available ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD constitutes an economical, ecofriendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized.Los materiales basados en ZnO y en particular las láminas de ZnO con morfología controlada han sido objeto en los últimos años de numerosas investigaciones debido al elevado potencial que presentan para múltiples aplicaciones emergentes, principalmente en electrónica. La deposición electroforética (EPD constituye un método alternativo económico, ecológico, de bajo coste energético y elevada escalabilidad para la producción de éstas láminas de ZnO, en contraste con las técnicas evaporativas empleadas habitualmente, las cuales presentan un elevado impacto energético, así como una escalabilidad complicada. Para su aplicación, sin embargo, y puesto que el principal requisito es el uso de suspensiones estables y bien dispersas, es necesario un detallado estudio de la coloidequímica de las mismas. En este trabajo se resumen las aportaciones más relevantes relativas al estudio de los distintos parámetros que afectan a la estabilidad coloidal de las suspensiones de nanopartículas de ZnO y al proceso de obtención de las láminas mediante EPD a partir de las mismas.

  19. Growth of Co2MnAl Thin Films by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Isber Samih

    2014-07-01

    Full Text Available The effects of the deposition temperature and laser energy on the characteristics of Co2MnAl films deposited on GaAs substrates were investigated. The grown films were characterized by AFM for film roughness and surface topography. Film thickness and elemental composition were measured using Rutherford Back Scattering (RBS technique, while crystalline structure and phase composition were investigated by XRD. The RBS measurements showed that the stochiometry of the films was satisfactory and very close to that of the target Co: 0.5, Mn: 0.25, Al: 0.25. The thickness of the films was found to increase as the laser energy was increased from 200 to 400 mJ, in particular for the films deposited at 400 °C. We also found an increase in the films thicknesses as the deposition temperature was increased for the samples grown at 200 and 300 mJ. The best film quality as deduced from XRD, RBS and AFM results for producing these single layers were those deposited at 600 °C with the laser energy at 300 mJ.

  20. Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

    Science.gov (United States)

    Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

    2010-03-01

    Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

  1. The deposition of silicon nitride films under low pressure on wafers up to 200 mm

    Directory of Open Access Journals (Sweden)

    Nalivaiko O. Yu.

    2012-12-01

    Full Text Available The influence of silicon nitride deposition condition on parameters of the obtained films has been investigated. It has been found that the deposition rate of silicon nitride films decreases with deposition temperature decreasing, and at the same time the within wafer thickness uniformity improves. It allows performing the reproducible deposition of silicon nitride films with thickness of less than 10 nm. It has been found that in order to decrease the oxidation depth of silicon nitride, it is appropriate to carry out the oxidation under 850—900°C. The developed process of silicon nitride deposition made it possible to obtain reservoir capacitors with specific capacitance of 3,8—3,9 fF/μm2 at film thickness of 7,0 nm.

  2. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schmidt, H.; Liu, Y.L.; Barr, T.; Chang, R.P.H.

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described

  3. Improving Barrier Properties of PET by Depositing a Layer of DLC Films on Surface

    Directory of Open Access Journals (Sweden)

    Zhiguo Zhang

    2013-01-01

    Full Text Available The diamond-like carbon films (DLC films depositing on the Poly (ethylene terephthalate (PET surface are obtained by plasma-enhanced chemical vapor deposition (PECVD, and the working gases are acetylene and argon gas. Surface morphology and the internal structure of DLC films are investigated by using Raman and FESEM, and the barrier properties of PET films which have been deposited the DLC films are tested in this paper. The results show that the deposition process parameters have an important effect on structure and performance of DLC films. It is shown that the diamond-like carbon films prepared by PECVD system are an amorphous carbon films which mixed with sp3 bond and sp2 bond. The best oxygen barrier property and water vapor barrier property of PET films are increased by 11 times and 12 times, respectively, in which the ID/IG ratio of the DLC film is nearly 0.76, and the sp3 content is about 40%.

  4. Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

    International Nuclear Information System (INIS)

    Lorusso, A.; Anni, M.; Caricato, A.P.; Gontad, F.; Perulli, A.; Taurino, A.; Perrone, A.; Chiadroni, E.

    2016-01-01

    In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

  5. The influence of deposition temperature on vanadium dioxide thin films microstructure and physical properties

    Directory of Open Access Journals (Sweden)

    Velaphi Msomi

    2010-10-01

    Full Text Available Vanadium dioxide thin films were successfully prepared on soda lime glass substrates using the optimised conditions for r.f-inverted cylindrical magnetron sputtering. The optimised deposition parameters were fixed and then a systematic study of the effect of deposition temperature, ranging from 450 °C to 550 °C, on the microstructure of thermochromic thin films was carried out. The deposited films were found to be well crystallised, showing strong texture corresponding to the (011 plane, indicating the presence of vanadium dioxide.

  6. One step production of magnetic nanoparticle films by laser pyrolysis inside a chemical vapour deposition reactor

    Energy Technology Data Exchange (ETDEWEB)

    Castro, V. de, E-mail: vanessa.decastro@uc3m.es [Departmento de Fisica, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911, Leganes, Madrid (Spain); Benito, G. [Instituto de Ciencia de Materiales de Madrid, ICMM, CSIC, Cantoblanco, 28049, Madrid (Spain); Hurst, S. [Pilkington European Technical Centre, Hall Lane, Lathom, Lancashire, L40 5 UF (United Kingdom); Serna, C.J.; Morales, M.P.; Veintemillas-Verdaguer, S. [Instituto de Ciencia de Materiales de Madrid, ICMM, CSIC, Cantoblanco, 28049, Madrid (Spain)

    2011-09-01

    Deposition of nanoparticulated films onto glass has been achieved by using an unprecedented combination of laser pyrolysis and chemical vapour deposition (CVD) on a single step process. Characterisation of the films reveals that the coated glasses obtained by this technique have similar characteristics to the ones previously fabricated using a two step pyrolysis plus CVD process. Under the laser action, maghemite or hematite nanoparticulated coatings are obtained by varying the processing conditions. We envisage the incorporation of this one step process for industrial production, where the nanoparticulated film would be deposited as the glass moves along the production line.

  7. Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

    Science.gov (United States)

    Hines, Jacqueline H. (Inventor)

    2015-01-01

    A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

  8. PVD processes of thin films deposition using Hall-current discharge

    International Nuclear Information System (INIS)

    Svadkovskij, I.V.

    2007-01-01

    Results of research and developments in the field of PVD processes of thin films deposition using Hall-current discharge have been summarized. Effects of interaction of ions with surface during deposition have been considered. Also features of application and prospects of devices based on ion beam and magnetron sputtering systems in thin films technologies have been analyzed. The aspects in the field plasma physics, technology and equipment plasma PVD processes of thin films deposition have been systematized, on the base of investigations made by author and other scientists. (authors)

  9. Structural characterization of sputtered indium oxide films deposited at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hotovy, I., E-mail: ivan.hotovy@stuba.s [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Pezoldt, J. [FG Nanotechnologie, Institut fuer Mikro- und Nanoelektronik, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Kadlecikova, M. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Kups, T.; Spiess, L. [FG Werkstoffe der Elektrotechnik, Institut fuer Werkstofftechnik, TU Ilmeau, Postfach 100565, 98684 Ilmenau (Germany); Breza, J. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Sakalauskas, E.; Goldhahn, R. [FG Exprimentalphysik I, Institut fuer Physik, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Rehacek, V. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia)

    2010-06-01

    Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In{sub 2}O{sub 3}) films showed a dominating randomly oriented nanocrystalline structure of cubic In{sub 2}O{sub 3}. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.

  10. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    International Nuclear Information System (INIS)

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

  11. Optical properties of Al2O3 thin films grown by atomic layer deposition.

    Science.gov (United States)

    Kumar, Pradeep; Wiedmann, Monika K; Winter, Charles H; Avrutsky, Ivan

    2009-10-01

    We employed the atomic layer deposition technique to grow Al(2)O(3) films with nominal thicknesses of 400, 300, and 200 nm on silicon and soda lime glass substrates. The optical properties of the films were investigated by measuring reflection spectra in the 400-1800 nm wavelength range, followed by numerical fitting assuming the Sellmeier formula for the refractive index of Al(2)O(3). The films grown on glass substrates possess higher refractive indices as compared to the films on silicon. Optical waveguiding is demonstrated, confirming the feasibility of high-index contrast planar waveguides fabricated by atomic layer deposition.

  12. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  13. Studies of effect of deposition parameters on the ZnO films prepared by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Shuchi [Department of Physics, University of Allahabad, Allahabad (India)], E-mail: shuchitripathi2@gmail.com; Choudhary, R.J. [UGC-DAE-Consortium for Scientific Research, Indore (India); Tripathi, A. [Inter University Accelerator Center, New Delhi (India); Baranwa, V.; Pandey, A.C. [Department of Physics, University of Allahabad, Allahabad (India); Gerlach, J.W. [Institute of Surface Modifications, Leipzig (Germany); Dar, C. [Department of Physics, University of Allahabad, Allahabad (India); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India)

    2008-04-15

    Thin films of zinc oxide (ZnO), having different thicknesses were prepared by pulsed laser deposition (PLD) technique onto silicon Si(1 1 1) and quartz (SiO{sub 2}) substrates at different partial pressures of oxygen. Rutherford back scattering (RBS) analysis was carried out in order to investigate effect of deposition parameters on thickness of films. Quality of the films was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses. The thickness of the film was found to increase with oxygen partial pressure for both Si and SiO{sub 2} substrates.

  14. Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

    International Nuclear Information System (INIS)

    Prater, W.L.; Allen, E.L.; Lee, W.-Y.; Toney, M.F.; Kellock, A.; Daniels, J.S.; Hedstrom, J.A.; Harrell, T.

    2005-01-01

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen-containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses of 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6%-10% for ion-beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron-deposited films are smoother. The dc-magnetron-produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films

  15. Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

    Directory of Open Access Journals (Sweden)

    Garima Saraswat

    2014-05-01

    Full Text Available NbN films are grown on chemical vapor deposited graphene using dc magnetron sputtering. The orientation and transition temperature of the deposited films is studied as a function of substrate temperature. A superconducting transition temperature of 14 K is obtained for highly oriented (111 films grown at substrate temperature of 150 °C, which is comparable to epitaxial films grown on MgO and sapphire substrates. These films show a considerably high upper critical field of ∼33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films by delaminating graphene from the substrate using a simple wet etching technique. These free-standing NbN layers can be transferred to any substrate, potentially enabling a range of novel superconducting thin-film applications.

  16. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  17. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  18. Growth, structure and stability of sputter-deposited MoS2 thin films

    Directory of Open Access Journals (Sweden)

    Reinhard Kaindl

    2017-05-01

    Full Text Available Molybdenum disulphide (MoS2 thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC substrates. Samples deposited at room temperature (RT and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films.

  19. Rapid processing method for solution deposited YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    Dawley, J.T.; Clem, P.G.; Boyle, T.J.; Ottley, L.M.; Overmyer, D.L.; Siegal, M.P.

    2004-01-01

    YBa 2 Cu 3 O 7-δ (YBCO) films, deposited on buffered metal substrates, are the primary candidate for second-generation superconducting (SC) wires, with applications including expanded power grid transmission capability, compact motors, and enhanced sensitivity magnetic resonance imaging. Feasibility of manufacturing such superconducting wires is dependent on high processing speed, often a limitation of vapor and solution-based YBCO deposition processes. In this work, YBCO films were fabricated via a new diethanolamine-modified trifluoroacetic film solution deposition method. Modifying the copper chemistry of the YBCO precursor solution with diethanolamine enables a hundredfold decrease in the organic pyrolysis time required for MA/cm 2 current density (J c ) YBCO films, from multiple hours to ∼20 s in atmospheric pressure air. High quality, ∼0.2 μm thick YBCO films with J c (77 K) values ≥2 MA/cm 2 at 77 K are routinely crystallized from these rapidly pyrolyzed films deposited on LaAlO 3 . This process has also enabled J c (77 K)=1.1 MA/cm 2 YBCO films via 90 m/h dip-coating on Oak Ridge National Laboratory RABiTS textured metal tape substrates. This new YBCO solution deposition method suggests a route toward inexpensive and commercializable ∼$10/kA m solution deposited YBCO coated conductor wires

  20. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    Rebollo P, B.

    2001-01-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  1. Microstructural and magnetic properties of thin obliquely deposited films: A simulation approach

    Energy Technology Data Exchange (ETDEWEB)

    Solovev, P.N., E-mail: platon.solovev@gmail.com [Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Izotov, A.V. [Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Belyaev, B.A. [Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Reshetnev Siberian State Aerospace University, 31, pr. Imeni Gazety “Krasnoyarskii Rabochii”, Krasnoyarsk 660014 (Russian Federation)

    2017-05-01

    The relation between microstructural and magnetic properties of thin obliquely deposited films has been studied by means of numerical techniques. Using our developed simulation code based on ballistic deposition model and Fourier space approach, we have investigated dependences of magnetometric tensor components and magnetic anisotropy parameters on the deposition angle of the films. A modified Netzelmann approach has been employed to study structural and magnetic parameters of an isolated column in the samples with tilted columnar microstructure. Reliability and validity of used numerical methods is confirmed by a good agreement of the calculation results with each other, as well as with our experimental data obtained by the ferromagnetic resonance measurements of obliquely deposited thin Ni{sub 80}Fe{sub 20} films. The combination of these numerical methods can be used to design a magnetic film with a desirable value of uniaxial magnetic anisotropy and to extract the obliquely deposited film structure from only magnetic measurements. - Highlights: • We present a simulation approach to study a relation between structural and magnetic properties of oblique films. • The calculated dependence of magnetic anisotropy on a deposition angle accords well with the experiment. • A modified Netzelmann approach is proposed. • It allows for the computation of magnetic and structural parameters of an isolated column. • Proposed approach can be used for theoretical studies and for characterization of oblique films.

  2. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    International Nuclear Information System (INIS)

    Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  3. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    Energy Technology Data Exchange (ETDEWEB)

    Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  4. Solution-Processed Efficient Nanocrystal Solar Cells Based on CdTe and CdS Nanocrystals

    Directory of Open Access Journals (Sweden)

    Songwei Liu

    2018-01-01

    Full Text Available Solution-processed CdTe nanocrystals solar cells have attracted much attention due to their low cost, low material consumption, and potential for roll-to-roll production. Among all kinds of semiconductor materials, CdS exhibits the lowest lattice mismatch with CdTe, which permits high junction quality and high device performance. In this study, high quality CdS nanocrystals were prepared by a non-injection technique with tetraethylthiuram disufide and 2,2′-dithiobisbenzothiazole as the stabilizers. Based on the CdTe and CdS nanocrystals, devices with the architecture of ITO/ZnO/CdS/CdTe/MoOx/Au were fabricated successfully by a solution process under ambient condition. The effects of annealing conditions, film thickness, and detailed device structure on the CdTe/CdS nanocrystal solar cells were investigated and discussed in detail. We demonstrate that high junction quality can be obtained by using CdS nanocrystal thin film compared to traditional CdS film via chemical bath deposition (CBD. The best device had short circuit current density (Jsc, open circuit voltage (Voc and fill factor (FF of 17.26 mA/cm2, 0.56 V, and 52.84%, respectively, resulting in a power conversion efficiency (PCE of 5.14%, which is significantly higher than that reported using CBD CdS as the window layer. This work provides important suggestions for the further improvement of efficiency in CdTe nanocrystal solar cells.

  5. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition.

    Science.gov (United States)

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  6. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Florian Waltz

    2015-03-01

    Full Text Available In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps, a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step. In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  7. Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

    International Nuclear Information System (INIS)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

    2015-01-01

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  8. Investigation on the pure and fluorine doped vanadium oxide thin films deposited by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Ramamurthi, K., E-mail: krmurthin@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625021, Tamil Nadu (India)

    2016-05-01

    Vanadium oxide and fluorine doped vanadium oxide thin films were deposited on the micro-slide glass substrates at 400 °C by spray pyrolysis technique. Vanadium oxide films were deposited using 0.1 M ammonium meta vanadate aqua solution. Precursor solution used to deposit fluorine doped vanadium oxide films was prepared adding separately 5 wt.%, 10 wt.%, 15 wt.% and 20 wt.% of ammonium fluoride with the 0.1 M ammonium meta vanadate aqua solution. X-ray diffraction results showed that the films are in mixed phases of β-V{sub 2}O{sub 5}, V{sub 2}O{sub 5} and V{sub 3}O{sub 7}. Surface morphology and band gap of these films were modified due to different levels of fluorine doping. The average visible transmittance (500–800 nm) of vanadium oxide films is decreased due to low level concentration of fluorine doping. - Highlights: • Addition of a few ml HCl yielded clear precursor aqua solution. • F doped vanadium oxide films were deposited for less concentration of fluorine. • Low level fluorine doping modified the surface morphology of the thin films. • Direct band gap of vanadium oxide film is slightly increased by fluorine doping.

  9. Characterization of chemically deposited Ag/sub 2/S thin films

    International Nuclear Information System (INIS)

    Choudhury, M.G.M.; Rahman, M.M; Shahjahan, M.; Hossain, M.S.; Muhibbullah, M.; Uddin, M.A.; Banu, D.A.

    2001-01-01

    Silver Sulphide (Ag/sub 2/S) thin films were prepared by the chemical deposition method on glass substrates. Films of different thickness were deposited at room temperature. The films obtained were found to the uniform, pin-hole free and strongly adherent to the substrates. Films were characterized by X-$D, Hall effect, dc conductivity, thermoelectric power and optical measurements. X-RD revealed that as deposited films are amorphous with some microcrystalline structure. Hall effect measurement shows that the material deposited is n-type semiconductor with carrier concentration of the order of 10/sup 14/ cm/sup -3/. The dc dark conductivity shows two distinct conduction regions. The conductivity increases quite sharply above a transition temperature. Tt and below Tt the conductivity is weakly activated process with hopping via localized states. Above Tt the activation energy is quite high and the conduction may be due to impurity states to extended states. From the nature of variation of thermoelectric power with temperature it was found that in this material the position of Fermi level lie above the conduction band for thicker films and below the conduction band for relatively thinner films. The optical band gap of the films has been calculated from the transmittance spectra. The evaluated optical band gap E/sup opt/ was found to be about 1.1 eV and the value do not change much with film thickness. The refractive index, extinction coefficient and dielectric constants have also been evaluated from the transmission measurements. (author)

  10. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    International Nuclear Information System (INIS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  11. OPTIMISATION OF SPRAY DEPOSITED Sno2 THIN FILM FOR ...

    African Journals Online (AJOL)

    Dr Obe

    1987-09-01

    Sep 1, 1987 ... ABSTRACT. The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be ...

  12. Pulsed laser deposition of AlMgB14 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  13. Effect of deposition time of sputtering Ag-Cu thin film on mechanical and antimicrobial properties

    Science.gov (United States)

    Purniawan, A.; Hermastuti, R.; Purwaningsih, H.; Atmono, T. M.

    2018-04-01

    Metallic implants are important components in biomedical treatment. However, post-surgery infection often occurs after installation of implant. The infections are usually treated by antibiotics, but it still causes several secondary problems. As a prevention treatment, the surgical instruments and implants must be in a sterile condition. This action is still not optimal too because the material still can attract the bacteria. From material science point of view, it can be anticipated by developing a type of material which has antibacterial properties or called antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent the infection. In this research, the influence of deposition time of Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method was analyzed. Deposition time used were for 10, 15 and 20 minutes in Argon gas pressure around 3 x 10-2 mbar in during deposition process. The morphology and surface roughness of Ag-Cu thin film were characterized using SEM and AFM. Based on the results, the deposition time influences the quality morphology that the thin films have good homogeneity and complete structure for longer deposition time. In addition, from roughness measurement results show that increase deposition time decrease the roughness of thin film. Antimicrobial performance was analyzed using Kirby Bauer Test. The results show that all of sample have good antimicrobial inhibition. Adhesion quality was evaluated using Rockwell C Indentation Test. However, the results indicate that the Ag-Cu thin film has low adhesion strength.

  14. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  15. Nitrogen implantation of Ti and Ti+Al films deposited on tool steel

    International Nuclear Information System (INIS)

    Huang, C.-T.; Duh, J.-G.

    1995-01-01

    Titanium and aluminum thin films were deposited onto A2 steel by rf magnetron sputtering with various Al contents. The coated assembly was then implanted with nitrogen ions at 92 kV and 1 mA for 4.5 h. The thickness of the implanted Ti and Ti+Al films deposited for 1 h was around 0.4-0.5 μm. With the aid of X-ray diffraction by the grazing-incidence technique, secondary ion mass spectrum (SIMS) and X-ray photoelectron spectroscopy (XPS), the titanium oxide and titanium nitride were identified on the top and inner surface in the implanted Ti film. For Ti+Al films after nitrogen implantation, Ti 3 O 5 was formed on the top surface beneath which is a (Ti, Al) N solid solution. There was Ti 2 N compound formed in the implanted Ti film, while only a minor amount of Ti 2 N phase was observed in the inner region in the implanted Ti+Al film. The nitrogen distribution was flattened and spread in the implanted Ti film, while a concentration gradient was observed in the Ti+Al film after implantation. The measured surface hardness of implanted Ti film was higher than those of Ti+Al films and the hardness of implanted Ti+39%Al film was enhanced as compared to the Ti+50%Al film. (Author)

  16. A Humidity Sensor Based on Silver Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Process

    Directory of Open Access Journals (Sweden)

    Thutiyaporn Thiwawong

    2013-01-01

    Full Text Available In this work, thin film of silver nanoparticles for humidity sensor application was deposited by electrostatic spray deposition technique. The influence of the deposition times on properties of films was studied. The crystal structures of sample films, their surface morphology, and optical properties have been investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and UV-VIS spectrophotometer, respectively. The crystalline structure of silver nanoparticles thin film was found in the orientation of (100 and (200 planes of cubic structure at diffraction angles 2θ  =  38.2° and 44.3°, respectively. Moreover, the silver nanoparticles thin films humidity sensor was fabricated onto the interdigitated electrodes. The sensor exhibited the humidity adsorption and desorption properties. The sensing mechanisms of the device were also elucidated by complex impedance analysis.

  17. Structural surprises in friction-deposited films of poly(tetrafluoroethylene)

    DEFF Research Database (Denmark)

    Breiby, Dag Werner; Sølling, Theis Ivan; Bunk, Oliver

    2005-01-01

    Thin films of poly(tetrafluoroethylene) (PTFE) produced by friction deposition were studied using grazing incidence X-ray diffraction as the principal tool. The structure of the deposited thin films was compared with that of the surface of the PTFE bar used for depositing the films. Both exhibited...... the 15/7 helix conformation characteristic of crystal PTFE phase IV. A high degree of biaxial orientation was found for the highly crystalline thin films. Whereas the unit cell of the bar surface material appeared to be single-stem hexagonal, the film displayed diffraction characteristics consistent...... with a larger multistem unit cell. The origin of this increase of the unit cell is attributed to a higher degree of regular packing, possibly related to alternating right- and left-handed PTFE helices-a structure which has never been verified experimentally for PTFE in the 15/7 configuration. We discuss...

  18. Synthesis and characterization of titanium dioxide thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps C, E.; Falcon B, T.; Carapia M, L.; Haro P, E.; Camacho L, M.A.

    2000-01-01

    In this work are presented the results obtained when TiO 2 thin films were deposited using the laser ablation technique. Thin films were deposited at different substrate temperatures, and different oxygen pressures, with the purpose of studying the influence of this deposit parameters in the structural characteristics of the films obtained. The structural characterization was realized through Raman Spectroscopy and X-ray Diffraction (XRD), the surface morphology of the layers deposited was verified by Scanning Electron Microscopy (Sem). The results show that the films obtained are of TiO 2 in rutile phase, getting this at low substrate temperatures, its morphology shows a soft surface with some spattered particles and good adherence. (Author)

  19. Improvement of copper plating adhesion on silane modified PET film by ultrasonic-assisted electroless deposition

    International Nuclear Information System (INIS)

    Lu Yinxiang

    2010-01-01

    Copper thin film on silane modified poly(ethylene terephthalate) (PET) substrate was fabricated by ultrasonic-assisted electroless deposition. The composition and topography of copper plating PET films were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Peel adhesion strength, as high as 16.7 N/cm, was achieved for the planting copper layer to the modified PET substrate with ultrasonic-assisted deposition; however, a relative low value as 11.9 N/cm was obtained for the sample without ultrasonic vibration by the same measurement. The electrical conductivity of Cu film was changed from 7.9 x 10 4 to 2.1 x 10 5 S/cm by using ultrasonic technique. Ultrasonic operation has the significant merits of fast deposition and formation of good membranes for electroless deposition of Cu on PET film.

  20. Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition

    Science.gov (United States)

    Ren, ZhongMin; Lu, Yongfeng; Mai, ZhiHong; Cheong, B. A.; Chow, S. K.; Wang, Jian P.; Chong, Tow Chong

    1999-07-01

    Boron-Carbon-Nitride BxCyNz thin films were deposited by excimer laser ablation of boron carbide under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by x-ray photoelectron spectroscope, Raman and IR spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

  1. Characterization of an Amorphous Titanium Oxide Film Deposited onto a Nano-Textured Fluorination Surface

    Directory of Open Access Journals (Sweden)

    Pei-Yu Li

    2016-05-01

    Full Text Available The photocatalytic activity of an amorphous titanium oxide (a-TiOx film was modified using a two-step deposition. The fluorinated base layer with a nano-textured surface prepared by a selective fluorination etching process acted as growth seeds in the subsequent a-TiOx deposition. A nanorod-like microstructure was achievable from the resulting a-TiOx film due to the self-assembled deposition. Compared to the a-TiOx film directly deposited onto the untreated base layer, the rate constant of this fluorinate-free a-TiOx film surface for decomposing methylene blue (MB solution that was employed to assess the film’s photocatalytic activity was markedly increased from 0.0076 min−1 to 0.0267 min−1 as a mechanism for the marked increase in the specific surface area.

  2. Investigation of the electrocatalytic activity for oxygen reduction of sputter deposited mixed metal films

    International Nuclear Information System (INIS)

    Schumacher, L.C.; Holzheuter, I.B.; Nucara, M.C.; Dignam, M.J.

    1989-01-01

    Sputter-deposited films of silver with lead, manganese and nickel have been studied as possible oxygen reduction electrocatalysts using cyclic voltammetry, rotating disc studies, steady-state polarization and Auger analysis. In general, the Ag-Pb and Ag-Mn films display superior electrocatalytic activity for O 2 reduction, while the Ag-Ni films' performance is inferior to that of pure Ag. For the Ag-Pb films, which show the highest electrocatalytic activity, the mixed metal films display oxidation-reduction behavior which is not simply a superposition of that of the separate metals, and suggests a mechanism for the improved behavior

  3. Third order nonlinearity in pulsed laser deposited LiNbO3 thin films

    Science.gov (United States)

    Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal; Raju, K. C. James

    2016-05-01

    Lithium niobate (LiNbO3) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

  4. Third order nonlinearity in pulsed laser deposited LiNbO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal, E-mail: kcjrsp@uohyd.ernet.in, E-mail: svrsp@uohyd.ernet.in [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Hyderabad 500046, Telangana (India); Raju, K. C. James, E-mail: kcjrsp@uohyd.ernet.in, E-mail: svrsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Hyderabad 500046, Telangana (India)

    2016-05-06

    Lithium niobate (LiNbO{sub 3}) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

  5. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hoffman, D.M. [Houston Univ., TX (United States); Atagi, L.M. [Houston Univ., TX (United States)]|[Los Alamos National Lab., NM (United States); Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang [Houston Univ., TX (United States); Rubiano, R.R. [Massachusetts Inst. of Tech., Cambridge, MA (United States); Springer, R.W.; Smith, D.C. [Los Alamos National Lab., NM (United States)

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  6. Catalytic Palladium Film Deposited by Scalable Low-Temperature Aqueous Combustion.

    Science.gov (United States)

    Voskanyan, Albert A; Li, Chi-Ying Vanessa; Chan, Kwong-Yu

    2017-09-27

    This article describes a novel method for depositing a dense, high quality palladium thin film via a one-step aqueous combustion process which can be easily scaled up. Film deposition of Pd from aqueous solutions by conventional chemical or electrochemical methods is inhibited by hydrogen embrittlement, thus resulting in a brittle palladium film. The method outlined in this work allows a direct aqueous solution deposition of a mirror-bright, durable Pd film on substrates including glass and glassy carbon. This simple procedure has many advantages including a very high deposition rate (>10 cm 2 min -1 ) and a relatively low deposition temperature (250 °C), which makes it suitable for large-scale industrial applications. Although preparation of various high-quality oxide films has been successfully accomplished via solution combustion synthesis (SCS) before, this article presents the first report on direct SCS production of a metallic film. The mechanism of Pd film formation is discussed with the identification of a complex formed between palladium nitrate and glycine at low temperature. The catalytic properties and stability of films are successfully tested in alcohol electrooxidation and electrochemical oxygen reduction reaction. It was observed that combustion deposited Pd film on a glassy carbon electrode showed excellent catalytic activity in ethanol oxidation without using any binder or additive. We also report for the first time the concept of a reusable "catalytic flask" as illustrated by the Suzuki-Miyaura cross-coupling reaction. The Pd film uniformly covers the inner walls of the flask and eliminates the catalyst separation step. We believe the innovative concept of a reusable catalytic flask is very promising and has the required features to become a commercial product in the future.

  7. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  8. Microstructures and photocatalytic properties of porous ZnO films synthesized by chemical bath deposition method

    International Nuclear Information System (INIS)

    Wang Huihu; Dong, Shijie; Chang Ying; Zhou Xiaoping; Hu Xinbin

    2012-01-01

    Different porous ZnO film structures on the surface of alumina substrates were prepared through a simple chemical bath deposition method in the methanolic zinc acetate solution. The surface morphology and phase structure of porous ZnO film were determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. Both initial zinc acetate concentration and sintering temperature have great impact on the final film structures. With the increase of initial zinc acetate concentration, the porous structures can be finely tuned from circular nest like assemblies composed film into successive nest like film, and finally to globular aggregates composed film. By increasing the sintering temperature, the porous structure of successive nest like film can be further controlled. Furthermore, the crystallinity of photocatalysts also can be greatly improved. The photodegradation results of Methyl Orange revealed that porous ZnO film with successive nest like structure sintered at 500 °C exhibited the highest photocatalytic activity under UV illumination.

  9. Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

    Science.gov (United States)

    Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

    2015-11-01

    Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

  10. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  11. Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

    Directory of Open Access Journals (Sweden)

    Badrul Munir

    2013-04-01

    Full Text Available Indium tin oxide (ITO films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222  to (400 and (440, as well as higher  surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10-4 Ω•cm was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices. 

  12. Investigation on single walled carbon nanotube thin films deposited by Langmuir Blodgett method

    Energy Technology Data Exchange (ETDEWEB)

    Vishalli,, E-mail: vishalli-2008@yahoo.com; Dharamvir, Keya [Department of Physics, Panjab University, Chandigarh (India); Kaur, Ramneek; Raina, K. K. [Materials Research Laboratory, School of Physics and Materials Science, Thapar University, Patiala (India)

    2015-05-15

    Langmuir Blodgett is a technique to deposit a homogeneous film with a fine control over thickness and molecular organization. Thin films of functionalized SWCNTs have been prepared by Langmuir Blodgett method. The good surface spreading properties of SWCNTs at air/water interface are indicated by surface pressure-area isotherm and the monolayer formed on water surface is transferred onto the quartz substrate by vertical dipping. A multilayer film is thus obtained in a layer by layer manner. The film is characterized by Atomic Force Microscope (AFM), UV-Vis-NIR spectroscopy and FTIR.AFM shows the surface morphology of the deposited film. UV-Vis-NIR spectroscopy shows the characteristic peaks of semiconducting SWCNTs. The uniformity of LB film can be used further in understanding the optical and electrical behavior of these materials.

  13. Barium titanate thin films deposited by electrophoresis on p-Doped Si (001) substrates.

    Science.gov (United States)

    Barbosa, J G; Pereira, M R; Moura, C; Mendes, J A; Almeida, B G

    2011-10-01

    Barium titanate (BaTiO3) thin films have been prepared by electrophoretic deposition on p-doped and platinum covered silicon (Si) substrates. Their structure, nanostructure and dielectric properties were characterized. The as-deposited films were polycrystalline and composed by barium titanate nanograins with an average grain size approximately 9 nm. Annealing at high temperatures promoted grain growth, so that the samples annealed at 600 degrees C presented average grain sizes approximately 24 nm. From Raman spectroscopy measurements it was found that the tetragonal (ferroelectric) BaTiO3 phase was stabilized on the films. Also, at higher annealing temperatures, cation disorder was reduced on the films. From measurements of the temperature dependence of the dielectric permittivity the corresponding paraelectric-ferroelectric phase transition was determined. The observed transition temperature (approximately 100 degrees C) was found to be below the BaTiO3 bulk or thick film values, due to the small nanosized grains composing the films.

  14. Amorphous carbon thin films deposited on Si and PET: Study of interface states

    International Nuclear Information System (INIS)

    Mariazzi, S.; Macchi, C.; Karwasz, G.P.; Brusa, R.S.; Laidani, N.; Bartali, R.; Gottardi, G.; Anderle, M.

    2005-01-01

    Thin carbon films with various thickness, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a ratio frequency plasma enhanced chemical vapor deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim od these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited to some open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface. (author)

  15. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Lecarpentier, F.; Daglish, M.; Kemmitt, T.

    2001-01-01

    Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  16. Magnetic properties of Co–N thin films deposited by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Silva, C., E-mail: cpsilva@fc.ul.pt [CFMC, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal); Dep. Física, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal); Vovk, A. [CFMC, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal); Dep. Física, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal); Silva, R.C. da [IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, E.N.10, 2686-953 Sacavém (Portugal); CFNUL, Universidade de Lisboa, Av. Prof. Gama Pinto, 2, 1649-003 Lisboa (Portugal); Strichovanec, P. [INA, University of Zaragoza, 50018 Zaragoza (Spain); Algarabel, P.A. [ICMA, University of Zaragoza—CSIC, Facultad de Ciencias, Zaragoza 50009 (Spain); Gonçalves, A.P. [CFMC, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, E.N.10, 2686-953 Sacavém (Portugal); Borges, R.P.; Godinho, M.; Cruz, M.M. [CFMC, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal); Dep. Física, Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749-016 Lisboa (Portugal)

    2014-04-01

    Co–N thin films with thickness of 80 nm were deposited using direct current magnetron sputtering at different N{sub 2} partial pressures (PP). The composition, structure and magnetic properties were characterized using Rutherford Backscattering Spectrometry, X-ray Diffraction, Atomic Force Microscopy and Magnetometry. The magnetic properties vary with the nitrogen content of the film, determined by the N{sub 2} PP used for deposition, and are correlated with the cobalt content of the film. The magnetic phases Co{sub 4+x}N and Co{sub 3}N were identified as responsible for the variation of the magnetization values. - Highlights: • Phases Co{sub 4}N and Co{sub 3}N were obtained in the films prepared by reactive sputtering. • Magnetization decreases with the nitrogen content of the film. • Magnetic results in good agreement with theoretical calculations for expected phases • Differences in magnetic properties reported for thicker films.

  17. Stress measurement and stress relaxation during magnetron sputter deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Abendroth, B.; Gago, R.; Kolitsch, A.; Moeller, W.

    2004-01-01

    Dynamic in situ analysis of stress and film thickness provide fast and more physical information on growth and stress evolution in cBN layers than integrating (ex situ) methods. Especially, features of the layered structure of boron nitride films, like the evolution of instantaneous stress and growth rates during deposition can be resolved by in situ methods. This work is concerned with dynamic in-situ stress measurement by means of cantilever bending during magnetron sputter deposition of cBN thin films. Laser deflection in combination with in situ ellipsometry is used to determine the instantaneous stress of the films. The results show in agreement with results that were obtained previously from ion beam assisted deposition (IBAD), that the hBN and cBN layers exhibit different levels of stress under constant deposition conditions. The stress increases from less than -4 GPa to very high values (-10 GPa) after the coalescence of the cBN nuclei. Therefore, it is possible to establish the point of cBN nucleation instantly. A simultaneous medium energy ion bombardment is used for stress relaxation during film deposition. A modified substrate bias voltage, combining negative high and low voltage pulses, is used to enable an ion bombardment of the growing film with energies up to 8 keV. In this way, cBN films with a stress as low as -1.7 GPa could be produced without destroying the sp 3 -bonds significantly

  18. Atomic layer deposition of copper and copper silver films using an electrochemical process

    International Nuclear Information System (INIS)

    Fang, J.S.; Liu, Y.S.; Chin, T.S.

    2015-01-01

    This paper describes the formation and properties of Cu and Cu(Ag) films on a Ru/Si substrate using electrochemical atomic layer deposition. The process was performed layer-by-layer using underpotential deposition (UPD) and surface-limited redox reactions. The first Cu atomic layer was deposited on the Ru/Si substrate via UPD. Using UPD, atomic layered of Pb, which acts as a sacrificial layer, was applied on the Cu layer. Then, a Cu 2+ solution was flushed into the cell at an open-circuit potential, and the Pb layer was exchanged for Cu via redox replacements. The above sequences were repeated 500 times to form a Cu film. The Cu(Ag) alloy films were formed using Cu–UPD and Ag–UPD in predetermined sequences. The lowest electrical resistivity achieved was 3.6 and 2.2 μΩ cm for the Cu film and Cu(Ag) film, respectively, after annealing at 400 °C. Due to the self-limiting reactions, the process has the ability to deposit atomic layers to meet the requirement of Cu interconnects. - Highlights: • Layer-by-layer growth of Cu and Cu(Ag) films are prepared using electrochemical atomic layer deposition. • Cu coverage is from 0.33 to 0.51 ML for each deposition cycle in different NaCl concentrations. • The process can be applied in Cu interconnections

  19. Deposition of thin films and surface modification by pulsed high energy density plasma

    International Nuclear Information System (INIS)

    Yan Pengxun; Yang Size

    2002-01-01

    The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

  20. A study on the growth mechanism and the process parameters controlling aluminum oxide thin films deposition by pulsed pressure MOCVD

    OpenAIRE

    Murthy, Hari; Miya, S. S; Krumdieck, Susan

    2016-01-01

    Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were use...

  1. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    Science.gov (United States)

    Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  2. Pulsed laser deposition growth of FeSb2 films for thermoelectric applications

    DEFF Research Database (Denmark)

    Sun, Ye; Canulescu, Stela; Sun, Peijie

    2011-01-01

    FeSb2 films were produced in a low-pressure Ar environment by pulsed laser deposition at 355 nm. The influence of growth parameters such as substrate temperature, Ar pressure and deposition time on the growth of FeSb2 films was studied. Nearly phase-pure FeSb2 films with thicknesses of 100–400 nm...... properties of FeSb2 films if they are to eventually reach thermoelectric applications at cryogenic temperatures.......FeSb2 films were produced in a low-pressure Ar environment by pulsed laser deposition at 355 nm. The influence of growth parameters such as substrate temperature, Ar pressure and deposition time on the growth of FeSb2 films was studied. Nearly phase-pure FeSb2 films with thicknesses of 100–400 nm...... were produced at 425 °C with an Ar pressure of 1.5–2 Pa. Thermal transport and Hall measurements were performed to explore the thermoelectric transport properties of the FeSb2 films. A maximum thermopower of 120 μVK−1 at 40 K was obtained. In general it is highly important to understand the growth...

  3. A Cationic Diode Based on Asymmetric Nafion® Film Deposits

    NARCIS (Netherlands)

    He, Daping; Madrid, Elena; Aaronson, Barak; Fan, Lian; Doughty, James; Mathwig, Klaus; Bond, Alan M; McKeown, Neil B; Marken, Frank

    2017-01-01

    A thin film of Nafion®, of approximately 5 microm thickness, asymmetrically deposited onto a 6 microm thick film of poly(ethylene terephthalate) (PET) fabricated with a 5, 10, 20, or 40 microm microhole, is shown to exhibit prominent ionic diode behaviour involving cation charge carrier ("cationic

  4. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  5. Microstructure and tribological performance of diamond-like carbon films deposited on hydrogenated rubber

    NARCIS (Netherlands)

    Pal, J.P. van der; Martinez Martinez, Diego; Pei, Y.T.; Rudolf, P.; Hosson, J.Th.M. De

    2012-01-01

    In this paper, the microstructure and tribological performance of diamond-like carbon (DLC) films prepared by plasma chemical vapor deposition on hydrogenated nitrile butadiene rubbers (HNBR) are studied. Different negative variations of temperature during film growth were selected by proper changes

  6. Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

    International Nuclear Information System (INIS)

    Iljinas, A.; Burinskas, S.; Dudonis, J.

    2011-01-01

    In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates. (author)

  7. Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

    Directory of Open Access Journals (Sweden)

    K. V. Rao

    2013-08-01

    Full Text Available We report a systematic study of room-temperature ferromagnetism (RTFM in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2 are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2 ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies.

  8. Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering

    International Nuclear Information System (INIS)

    Kim, J. S.; Park, J. K.; Baik, Y. J.; Kim, W. M.; Jeong, J.; Seong, T. Y.

    2012-01-01

    Zn-Sn-O (ZTO) films are known to be able to form an amorphous phase, which provides a smooth surface morphology as well as etched side wall, when deposited by using the conventional sputtering technique and, therefore, to have a potential to be applied as transparent thin film transistors. In this study, ZTO thin films were prepared by using combined sputtering of ZnO and SnO 2 targets, and the dependences of their electrical and optical properties on the composition and the deposition parameters were examined. The Sn content in the films was varied in the range of 35 ∼ 85 at .%. The deposition was carried out at room temperature, 150 and 300 .deg. C, and the oxygen content in sputtering gas was varied from 0 to 1 vol.%. Sn-rich films had better electrical properties, but showed large oxygen deficiency when deposited at low oxygen partial pressures. ZTO films with Sn contents lower than 55 at.% had good optical transmission, but the electrical properties were poor due to very low carrier concentrations. A high Hall mobility of larger than 10 cm 2 /Vs could be obtained in the carrier density range 10 17 ∼ 10 20 cm -3 , and the etching rate was measurable for films with Sn content up to 70 at.% when using a dilute HCl solution, indicating a good possibility of utilizing ZTO films for device applications.

  9. Epitaxial growth of solution deposited Bi2Sr2CaCu2Ox films

    NARCIS (Netherlands)

    Gobel, OF; Du, [No Value; Hibma, T; von Lampe, [No Value; Steiner, U

    The epitaxial growth of Bi2Sr2CaCu2Ox (Bi2212) high temperature superconducting thin films was studied. The films were solution-deposited from a polymer-containing precursor onto SrTiO3 (001) substrates. Bi2212 formed an epitaxial phase with the c-axis parallel to the substrate normal and an in-lane

  10. Parameters of nanodimensional aluminium films deposited by the laser method in vacuum

    International Nuclear Information System (INIS)

    Gusakov, G.A.; Ismailov, D.R.; Puzyrev, M.V.

    2011-01-01

    The investigation of the thickness and structure of a aluminium films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

  11. Fabrication of Antireflection Nanodiamond Particle Film by the Spin Coating Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available Diamond-based antireflective (AR coatings were fabricated using a spin coating of diamond suspension at room temperature as nucleation enhancement procedure and microwave plasma enhanced chemical vapour deposition. Various working pressures were used to investigate their effect on the optical characterization of the as-deposited diamond films. Scanning electron microscopy (SEM and atomic forced microscopy (AFM were employed to analyze the surface properties of the diamond films. Raman spectra and transmission electron microscopy (TEM also were used for analysis of the microstructure of the films. The results showed that working pressure had a significant effect on thickness, surface roughness, and wettability of the as-deposited diamond films. Deposited under 35 Torr or working pressure, the film possessed a low surface roughness of 13.8 nm and fine diamond grain sizes of 35 nm. Reflectance measurements of the films also were carried out using UV-Vis spectrometer and revealed a low reflectance value of the diamond films. The achievement demonstrated feasibility of the proposed spin-coating procedure for large scale production and thus opens up a prospect application of diamond film as an AR coating in industrial optoelectronic device.

  12. Successive ionic layer adsorption and reaction deposition of ...

    African Journals Online (AJOL)

    Successive ionic layer adsorption and reaction (SILAR) deposition of CdS which is based on sequential reactions at the substrate surface is report in this work. Each reaction is followed by rinsing which enables heterogeneous reaction between the solid phase and the solvated ions in the solution. Accordingly, a thin film ...

  13. Growth of ZnO thin films on GaAs by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Elders, J.; Gardeniers, Johannes G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full

  14. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  15. Barium ferrite thin films prepared by alternate deposition

    CERN Document Server

    LiuXiaoXi; Wei Fu Lin; Yang Zheng; Morisako, A; Matsumoto, M

    2000-01-01

    BaM films with various compositions were prepared by reactive RF diode sputtering method. The effects of Ba content on the c-axis orientation, temperature dependence of the magnetic properties and the microstructure of the films were investigated. Our results show that films with high Ba content tend to have c-axis normal to the film plane, and have a large value of dH sub C /dT due to the plate-like grains, while films which have low Ba content tend to have c-axis in the film plane, and have a small value of dH sub C /dT caused by the acicula-shaped grains.

  16. Electrochemical determination of CdS band edges and semiconducting parameters

    International Nuclear Information System (INIS)

    Miandari, Somaieh; Jafarian, Majid; Mahjani, Mohammad Ghasem; Heidaripour, Ashraf; Gobal, Fereydoon

    2015-01-01

    Cadmium sulfide (CdS) thin film was electrodeposited on indium tin oxide (ITO) by chronoamperometry. The SEM images showed that hexagonal sheets of CdS deposited on the ITO surface. The X-ray diffraction (XRD) analysis confirmed this structure for CdS crystals and the average of crystalline size and the lattice constant parameters are approximately 39.54 and a = 0.4136, c = 0.6696 nm respectively. Photo-electrochemical investigations were performed by cyclic voltammetry (CV), linear sweep voltammetry (LSV), and electrochemical impedance spectroscopy (EIS) techniques. CdS band edges and density of states (DOS) were determined by CV technique. The band gap energy (E bg ) was measured by ultraviolet–visible (UV–vis) spectroscopy and electrochemical methods. Mott–Schottky plots were used to find the values of flat band potential (E fb ), donor density (N D ) and Debye length (L D ). Also, the position of surface states was investigated by Mott–Schottky and LSV techniques. EIS was employed to confirm our electrochemical findings and investigate the charge transfer mechanism. (author)

  17. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  18. Fabrication of cuprous chloride films on copper substrate by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Ting; Ci, Ji-Wei; Tu, Wei-Chen [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Shen, Chin-Chang; Wu, Chih-Hung [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China)

    2015-09-30

    Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl{sub 2}) compound as the precursor for both the Cu{sup 2+} and Cl{sup −} sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD. - Highlights: • Cuprous chloride (CuCl) was prepared on Cu substrate by chemical bath deposition. • HCl dip treatments facilitated the deposition of a full-coverage CuCl film. • A homogeneous elemental distribution was recognized for the deposited CuCl layer. • Excitonic and biexcitonic photoluminescence lines of CuCl films were well-resolved. • The free exciton emission line of CuCl films was observable at room temperature.

  19. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  20. Growth of phenylene vinylene thin films via surface polymerization by ion-assisted deposition

    NARCIS (Netherlands)

    Wroble, Amanda T.; Wildeman, Jurjen; Anunskis, Daniel J.; Hanley, Luke

    2008-01-01

    Surface polymerization by ion-assisted deposition was used to grow phenylene vinylene films (SPIAD-PPV) using the evaporation of 2methoxy-5-(2'-ethylhexyloxy)-1,4-bis((4',4 ''-bisstyryl) benzene) (MEH-OPV5) and the simultaneous deposition of non-mass-selected 10-200 eV thiophene or acetylene ions.

  1. Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

    NARCIS (Netherlands)

    Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

    2011-01-01

    We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

  2. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    sis of the hydrolysis reaction between tin tetrachloride and water vapour showed that the rate of deposition of SnO2 is a strong function of the temperature and the ratio of the reactants. Later, in the year 1990, undoped tin oxide films have been prepared by a chemical vapour deposition tech- nique by Sanon et al (1990).

  3. High quality antireflective ZnS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

    2012-01-01

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  4. Structure, morphology and electrocatalytic properties of WO x thin films prepared by reactive pulsed laser deposition

    Science.gov (United States)

    Fominski, V. Y.; Grigoriev, S. N.; Romanov, R. I.; Volosova, M. A.; Fominski, D. V.; Irzhak, A. V.

    2017-12-01

    Nanostructured WO xheated substrate resulted in the formation of nanoneedles and nanosheets. Fairly good catalytic properties in hydrogen evolution reaction (HER) and in electrolytic Pt deposition were revealed for the WO x films that consisted of loosely packed ball-like nanocrystals possessing a size of ∼20 nm. The catalytic activity of the films consisted of nanoneedles and nanosheets was not good enough. Adjustable electrolytic deposition of Pt on the nanostructured WO x support film allowed to prepare effective hybrid HER catalyst containing only ∼7 μg/cm2 of Pt.

  5. Nanostructured diamond film deposition on curved surfaces of metallic temporomandibular joint implant

    Energy Technology Data Exchange (ETDEWEB)

    Fries, Marc D; Vohra, Yogesh K [Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, AL (United States)

    2002-10-21

    Microwave plasma chemical vapour deposition of nanostructured diamond films was carried out on curved surfaces of Ti-6Al-4V alloy machined to simulate the shape of a temporomandibular joint (TMJ) dental implant. Raman spectroscopy shows that the deposited films are uniform in chemical composition along the radius of curvature of the TMJ condyle. Thin film x-ray diffraction reveals an interfacial carbide layer and nanocrystalline diamond grains in this coating. Nanoindentation hardness measurements show an ultra-hard coating with a hardness value of 60{+-}5 GPa averaged over three samples. (rapid communication)

  6. RAPID COMMUNICATION: Nanostructured diamond film deposition on curved surfaces of metallic temporomandibular joint implant

    Science.gov (United States)

    Fries, Marc D.; Vohra, Yogesh K.

    2002-10-01

    Microwave plasma chemical vapour deposition of nanostructured diamond films was carried out on curved surfaces of Ti-6Al-4V alloy machined to simulate the shape of a temporomandibular joint (TMJ) dental implant. Raman spectroscopy shows that the deposited films are uniform in chemical composition along the radius of curvature of the TMJ condyle. Thin film x-ray diffraction reveals an interfacial carbide layer and nanocrystalline diamond grains in this coating. Nanoindentation hardness measurements show an ultra-hard coating with a hardness value of 60+/-5 GPa averaged over three samples.

  7. Nanostructured diamond film deposition on curved surfaces of metallic temporomandibular joint implant

    International Nuclear Information System (INIS)

    Fries, Marc D; Vohra, Yogesh K

    2002-01-01

    Microwave plasma chemical vapour deposition of nanostructured diamond films was carried out on curved surfaces of Ti-6Al-4V alloy machined to simulate the shape of a temporomandibular joint (TMJ) dental implant. Raman spectroscopy shows that the deposited films are uniform in chemical composition along the radius of curvature of the TMJ condyle. Thin film x-ray diffraction reveals an interfacial carbide layer and nanocrystalline diamond grains in this coating. Nanoindentation hardness measurements show an ultra-hard coating with a hardness value of 60±5 GPa averaged over three samples. (rapid communication)

  8. The role of oxygen in the deposition of copper–calcium thin film as diffusion barrier for copper metallization

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhinong, E-mail: znyu@bit.edu.cn [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Ren, Ruihuang [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Xue, Jianshe; Yao, Qi; Li, Zhengliang; Hui, Guanbao [Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176 (China); Xue, Wei [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China)

    2015-02-15

    Highlights: • The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film. • The introduction of oxygen into the deposition of CuCa film is necessary to improve the adhesion of Cu film. • The CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate. - Abstract: The properties of copper (Cu) metallization based on copper–calcium (CuCa) diffusion barrier as a function of oxygen flux in the CuCa film deposition were investigated in view of adhesion, diffusion and electronic properties. The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film, however, and increases the resistance of Cu film. The introduction of oxygen into the deposition of CuCa film induces the improvement of adhesion and crystallinity of Cu film, but produces a slight increase of resistance. The increased resistance results from the partial oxidation of Cu film. The annealing process in vacuum further improves the adhesion, crystallinity and conductivity of Cu film. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) show that the CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate due to the formation of Ca oxide in the interface of CuCa/substrate.

  9. Preparation of silver thin films using liquid-phase precursors by metal organic chemical vapor deposition and their conversion to silver selenide films by selenium vapor deposition

    International Nuclear Information System (INIS)

    Kim, Hong-Ki; Jeong, Han-Cheol; Kim, Kyung Soo; Yoon, Seok Hwan; Lee, Seung Soo; Seo, Kook Won; Shim, Il-Wun

    2005-01-01

    A series of new Ag precursors containing β-diketonate and neutral phosphite ligands were synthesized and characterized by various spectroscopic methods. These volatile precursors in liquid phase were thermally stable and quite useful in the preparation of silver thin films through bubbler-type chemical vapor deposition (CVD). In a typical case of silver (I) 1,1,1-trifluoro-2,4-pentanedionate triethyl phosphite adduct ((tfac)AgP(OEt) 3 ) precursor, very pure silver thin films were obtained under relatively mild conditions without any appreciable amount of F, O, and P impurities. These thin films were easily converted to β-orthorhombic silver selenide by simple selenium vapor deposition method. In scanning electron microscopic analyses, the average particle size of the latter was found to increase to about 1.26 μm after gas-phase selenization reaction

  10. Deposition-temperature dependence of structural anisotropy in amorphous Tb-Fe films

    Science.gov (United States)

    Harris, V. G.; Elam, W. T.; Koon, N. C.; Hellman, F.

    1994-02-01

    The anisotropic local structure in a series of amorphous Tb26Fe74 films deposited at different deposition temperatures and having different magnetic anisotropy energies have been investigated using polarization-dependent extended x-ray-absorption fine-structure measurements. Samples deposited at temperatures >=300 K exhibit anisotropic pair correlations where like atomic pairs are favored in plane and unlike pairs are favored out of plane. Both the anisotropic pair correlations and the perpendicular magnetic anisotropy increase with increasing deposition temperature. In contrast, a sample deposited at 77 K was found to have isotropic pair correlations, low perpendicular magnetic anisotropy, and a large (~=1%) in-plane compression.

  11. Remote microwave plasma enhanced chemical vapor deposition (RMPECVD) of silica and alumina films

    Energy Technology Data Exchange (ETDEWEB)

    Desmaison, J.; Hidalgo, H.; Tristant, P.; Naudin, F.; Merle, D. [Limoges Univ. (France). Lab. de Sciences des Procedes Ceramiques et Traitements de Surface

    2002-07-01

    Alumina or silica are attractive as insulation and protective layers for sensitive substrates. Oxides are deposited by remote microwave plasma enhanced chemical vapor deposition (RMPECVD) using an oxygen plasma and a mixture of precursor gas silane or trimethylaluminum (TMA) diluted in argon, respectively for silica and alumina, injected in the afterglow. This technique allows to deposit films of SiO{sub 2} and Al{sub 2}O{sub 3} with satisfactory characteristics (density, etch rate, stoichiometry) and high deposition rate. The comparison of the best deposition conditions reveals that in case of alumina higher temperatures and lower pressures are needed. (orig.)

  12. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  13. Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

    2015-06-01

    There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

  14. Deposition of CdS nanoparticles on MIL-53(Fe) metal-organic framework with enhanced photocatalytic degradation of RhB under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Longxing, E-mail: hulxhhhb@shu.edu.cn [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Deng, Guihua [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Lu, Wencong [College of Sciences, Shanghai University, Shanghai 200444 (China); Pang, Siwei; Hu, Xing [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

    2017-07-15

    Graphical abstract: The CdS/MIL-53(Fe) photocatalyst has been synthesized by a facile two-step solvothermal method and applied for photocatalytic degradation of organic pollutant RhB under visible light irradiation. - Highlights: • A novel CdS/MIL-53(Fe) photocatalyst was successfully synthesized via a facile two-step solvothermal method. • CdS/MIL-53(Fe) exhibited an enhanced visible-light photocatalytic degradation of RhB in water. • The mechanisms for the formation of CdS/MIL-53(Fe) and photocatalytic degradation of RhB were proposed. - Abstract: A novel composite, CdS/MIL-53(Fe), was successfully fabricated via a facile solvothermal method and characterized with XRD, SEM, TEM, XPS, FT-IR and UV–vis DRS. The results showed that the fabrication was able to result in a good dispersion of CdS nanoparticles onto MIL-53(Fe). The photocatalytic activities of the as-synthesized composite were investigated through the degradation of Rhodamine B (RhB) in water under visible light irradiation. It was found that the composite prepared at the mass ratio of CdS to MIL-53(Fe) of 1.5:1 displayed the highest photocatalytic activity. An approximately 92.5% of photocatalytic degradation of RhB was achieved at 0.5 g/L of 1.5-CdS/MIL dosage, 10 mg/L of initial RhB concentration and 23 °C of reaction temperature under visible light irradiation. The RhB photocatalytic degradation followed well the first-order kinetics equation and the increased catalyst dosage and optimal initial RhB concentration were responsible for the enhanced photocatalytic degradation. Quenching tests revealed that the predominant free radicals in the CdS/MIL-(53)-RhB{sub aq}-visible light system was O{sub 2}{sup −}·; nevertheless, h{sup +} and ·OH also contributed to a certain degree. The enhanced photocatalytic performance was ascribed to the formation of heterojunction structure between CdS and MIL-53(Fe) which significantly suppressed the recombination of photogenerated electron-hole pairs

  15. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  16. Single-phase cadmium telluride thin films deposited by electroless electrodeposition

    International Nuclear Information System (INIS)

    Khrypunov, G.; Klochko, N.; Lyubov, V.; Li, T.; Volkova, N.

    2010-01-01

    Full text : Today cadmium telluride (CdTe) is a leading base material for the fabrication of thin film solar cells. Equally with the creation of traditional thin film photovoltaic devices on the base of CdTe in recent years several approaches have been investigated to develop solar cells with extremely thin (80-500 nm) CdTe absorber (so-called ηE(eta)-solar cells) that offer the potential to reduce recombination losses in the base layers and thus use low cost materials. Until today the CdTe depositions for the η-solar cells manufacture were performed by vapour phase epitaxy under dynamical vacuum at working temperature 750 degrees Celsium or by electrodeposition in the special electrochemical cell equipped with the potentiostat. Development research of simple and inexpensive method for obtaining of the single-phase stoichiometric cadmium telluride films has required an improvement of the electroless electrodeposition technique, which theretofore was characterized by some disadvantages, namely, the CdTe films were polluted by free tellurium additions and the composition of the films was Cd:Te=55:45. So, for the showing up the synthesis of doped or stoichiometric cadmium telluride films conditions and in order to decide the problem of the deposition of single-phase CdTe layers it was researched the electrochemical processes going during electroless electrolysis in sulfate solutions with different acidities and CdSO 4 concentrations. Some film samples during deposition were illuminated by 500 W halogen lamp. Deposition time was 10-15 min. The phase composition and structure of the deposited films were determined by XRD-method, the average sizes of the crystalline grains in the films were estimated using Debye-Scherer formula. The transmittance spectra of the samples were measured by double beam spectrophotometer in the spectral range of 0.6-1.1 μm. Surface morphology of the films was researched by scanning electron microscopy. By means of analysis of the

  17. Reactive Ar ion beam sputter deposition of TiO{sub 2} films: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Lautenschläger, T.; Thelander, E. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Spemann, D. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig (Germany)

    2017-03-15

    Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Thickness, growth rate, structure, mass density, composition, optical properties. • All TiO{sub 2} films are amorphous with systematic variations in mass density. • Considerable amount of inert process gas correlated with scattering angle. • Correlation of mass density and index of refraction. - Abstract: Several sets of TiO{sub 2} films were grown by Ar ion beam sputter deposition under systematic variation of ion energy and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, structural properties, composition, mass density, and optical properties. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and stoichiometric, but can contain a considerable amount of backscattered primary particles. The atomic fraction of Ar particles decreases systematically with increasing scattering angle, independent from ion energy and ion incidence angle. Mass density and index of refraction show similar systematic variations with ion energy and geometrical parameters. The film properties are mainly influenced by the scattering geometry, and only slightly by ion energy and ion incidence angle. The variations in the film properties are tentatively assigned to changes in the angular and energy distribution of the sputtered target particles and back-scattered primary particles.

  18. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  19. Characteristics of selective deposition of metal organic films using focused ion beams

    International Nuclear Information System (INIS)

    Gamo, Kenji; Takakura, Nobuyuki; Takehara, Daisuke; Namba, Susumu

    1984-01-01

    50 keV Ar + or 35 keV focused Ga + beam were irradiated in a trimethyl aluminum atmosphere to provide a detailed characterization of maskless deposition. It was found from Auger electron spectroscopy that deposited films contain oxygen, carbon, aluminum and fluorine. The film thickness increased linearly with increasing a dose and the deposition rate was 10-20 nm/(10 16 ions/cm 2 ). A 0.5μm wide fine pattern which reflects a beam profile was formed by using focused Ga + beam. (author)

  20. Characterisation of optical thin films obtained by plasma ion assisted deposition

    Science.gov (United States)

    Placido, Frank; Gibson, Des; Waddell, Ewan; Crossan, Edward

    2006-08-01

    Optical thin films deposited using plasma ion assisted deposition (PAD) are characterized by ellipsometry, spectrophotometry and nano-indentation. PAD utilizes a dc voltage between an anode and a hot cathode, creating a high-density plasma that is extracted by an electromagnetic field. The assisted source allows denser, more stable films with higher refractive indices to be deposited without additional heating of the substrates. The primary advantage of the plasma compared to the ion source approach is that the plasma fills the vacuum chamber and couples into the evaporant, inducing partial ionization.

  1. Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

    Energy Technology Data Exchange (ETDEWEB)

    Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2016-06-15

    We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

  2. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  3. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

    Science.gov (United States)

    Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

    2017-11-01

    Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

  5. Electrochemical deposition of Mg(OH2/GO composite films for corrosion protection of magnesium alloys

    Directory of Open Access Journals (Sweden)

    Fengxia Wu

    2015-09-01

    Full Text Available Mg(OH2/graphene oxide (GO composite film was electrochemical deposited on AZ91D magnesium alloys at constant potential. The characteristics of the Mg(OH2/GO composite film were investigated by scanning electron microscope (SEM, energy-dispersive X-ray spectrometry (EDS, X-ray diffractometer (XRD and Raman spectroscopy. It was shown that the flaky GO randomly distributed in the composite film. Compared with the Mg(OH2 film, the Mg(OH2/GO composite film exhibited more uniform and compact structure. Potentiodynamic polarization tests revealed that the Mg(OH2/GO composite film could significantly improve the corrosion resistance of Mg(OH2 film with an obvious positive shift of corrosion potential by 0.19 V and a dramatic reduction of corrosion current density by more than one order of magnitude.

  6. HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering.

    Science.gov (United States)

    Faudoa-Arzate, A; Arteaga-Durán, A; Saenz-Hernández, R J; Botello-Zubiate, M E; Realyvazquez-Guevara, P R; Matutes-Aquino, J A

    2017-02-17

    Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM.

  7. HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    A. Faudoa-Arzate

    2017-02-01

    Full Text Available Though tungsten trioxide (WO3 in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2 by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD, high-resolution electron transmission microscopy (HRTEM, scanning electron microscopy (SEM, and atomic force microscopy (AFM techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM.

  8. Growth of p-type ZnOS films by pulsed laser deposition

    Science.gov (United States)

    Kobayashi, Kenkichiro; Ohtsuki, Tohru; Tomita, Yasumasa; Kohno, Yosiumi; Maeda, Yasuhisa; Matsushima, Shigenori

    2017-01-01

    ZnO1-xSx films were deposited on quartz substrates by pulsed laser deposition (PLD) of ZnO1-xSx targets. The ZnO1-xSx films with S-contents of 0.03-0.17 were grown from the ZnO1-xSx targets sulfured at temperatures of 200 and 500 °C. The resistivity of the ZnO1-xSx films is slightly increased with the S-content. An increase of the O2-partial pressure in an atmosphere reduces the S-content in the films and drastically enhances the resistivity of the films. However, the carrier type of the films is still n-type. In order to incorporate excess S atoms into films, evaporation of Sulfur was performed during the PLD process. As a temperature of the S-evaporation is raised, the resistivity of the films is significantly enhanced and hole-conductivity appears in the films grown by the S-evaporation at 80 and 90 °C. By X-ray photoelectron spectroscopic measurements, the presence of SOx species is confirmed for the p-type ZnO1-xSx film. Both interstitial SO3 or SO4 clusters and complexes of Zn-vacancy with H are considered to be appropriate acceptors responsible for the hole-conductivity at room temperature.

  9. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  10. Magnetic anisotropy in Ni-Si nanoparticle films produced by ultrashort pulsed laser deposition

    International Nuclear Information System (INIS)

    Iannotti, V.; Ausanio, G.; Campana, C.; D'Orazio, F.; Hison, C.; Lucari, F.; Lanotte, L.

    2008-01-01

    Pulsed laser deposition (uPLD) in vacuum by means of subpicosecond laser pulses is a powerful, versatile technique for the production of films constituted by nanoparticles. On impact with the deposition substrate, the nanodrops ejected from the target assume an oblate ellipsoidal shape, solidifying with the major cross-section parallel to the substrate plane. These features and the difficult coalescence among the deposited nanoparticles are peculiar characteristics specific to the films obtained by uPLD. In the case of magnetic nanoparticle films obtained by means of this technique, a magnetization isotropy in the film plane and a hard magnetization axis orthogonal to the film plane are expected. This simple assumption, generated by the specific shape and orientation of the deposited nanoparticles, was not experimentally verified up to now. The present investigation represents the first experimental validation of magnetic anisotropy, determined by the peculiar morphology and topology of the constituent particles, in the uPLD Ni x Si 100-x nanoparticle films. The in-plane isotropic magnetization behaviour, as well as the presence of a hard magnetization axis perpendicular to the sample surface were demonstrated for all investigated films. The difficult coalescence among the magnetic nanoparticles, even at high Ni volume fractions, is confirmed by the behaviour of the initial magnetization curve, typical for single-domain nanoparticles systems

  11. Magnetic anisotropy in Ni-Si nanoparticle films produced by ultrashort pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iannotti, V. [CNR-INFM Coherentia, Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli ' Federico II' , Piazzale V. Tecchio 80, I-80125 Napoli (Italy)], E-mail: iannotti@na.infn.it; Ausanio, G. [CNR-INFM Coherentia, Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli ' Federico II' , Piazzale V. Tecchio 80, I-80125 Napoli (Italy); Campana, C. [Dipartimento di Ingegneria dei Materiali e della Produzione, Universita degli Studi di Napoli ' Federico II' , Piazzale V. Tecchio 80, I-80125 Napoli (Italy); D' Orazio, F. [Dipartimento di Fisica, Universita dell' Aquila, Via Vetoio 10, I-67010 Coppito, L' Aquila (Italy); Hison, C. [CNR-INFM Coherentia, Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli ' Federico II' , Piazzale V. Tecchio 80, I-80125 Napoli (Italy); Lucari, F. [Dipartimento di Fisica, Universita dell' Aquila, Via Vetoio 10, I-67010 Coppito, L' Aquila (Italy); Lanotte, L. [CNR-INFM Coherentia, Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli ' Federico II' , Piazzale V. Tecchio 80, I-80125 Napoli (Italy)

    2008-10-15

    Pulsed laser deposition (uPLD) in vacuum by means of subpicosecond laser pulses is a powerful, versatile technique for the production of films constituted by nanoparticles. On impact with the deposition substrate, the nanodrops ejected from the target assume an oblate ellipsoidal shape, solidifying with the major cross-section parallel to the substrate plane. These features and the difficult coalescence among the deposited nanoparticles are peculiar characteristics specific to the films obtained by uPLD. In the case of magnetic nanoparticle films obtained by means of this technique, a magnetization isotropy in the film plane and a hard magnetization axis orthogonal to the film plane are expected. This simple assumption, generated by the specific shape and orientation of the deposited nanoparticles, was not experimentally verified up to now. The present investigation represents the first experimental validation of magnetic anisotropy, determined by the peculiar morphology and topology of the constituent particles, in the uPLD Ni{sub x}Si{sub 100-x} nanoparticle films. The in-plane isotropic magnetization behaviour, as well as the presence of a hard magnetization axis perpendicular to the sample surface were demonstrated for all investigated films. The difficult coalescence among the magnetic nanoparticles, even at high Ni volume fractions, is confirmed by the behaviour of the initial magnetization curve, typical for single-domain nanoparticles systems.

  12. Magnetic anisotropy in Ni-Si nanoparticle films produced by ultrashort pulsed laser deposition

    Science.gov (United States)

    Iannotti, V.; Ausanio, G.; Campana, C.; D'Orazio, F.; Hison, C.; Lucari, F.; Lanotte, L.

    Pulsed laser deposition (uPLD) in vacuum by means of subpicosecond laser pulses is a powerful, versatile technique for the production of films constituted by nanoparticles. On impact with the deposition substrate, the nanodrops ejected from the target assume an oblate ellipsoidal shape, solidifying with the major cross-section parallel to the substrate plane. These features and the difficult coalescence among the deposited nanoparticles are peculiar characteristics specific to the films obtained by uPLD. In the case of magnetic nanoparticle films obtained by means of this technique, a magnetization isotropy in the film plane and a hard magnetization axis orthogonal to the film plane are expected. This simple assumption, generated by the specific shape and orientation of the deposited nanoparticles, was not experimentally verified up to now. The present investigation represents the first experimental validation of magnetic anisotropy, determined by the peculiar morphology and topology of the constituent particles, in the uPLD Ni xSi 100-x nanoparticle films. The in-plane isotropic magnetization behaviour, as well as the presence of a hard magnetization axis perpendicular to the sample surface were demonstrated for all investigated films. The difficult coalescence among the magnetic nanoparticles, even at high Ni volume fractions, is confirmed by the behaviour of the initial magnetization curve, typical for single-domain nanoparticles systems.

  13. Preparation of B1-(Cr,Ga)N thin films by pulsed laser deposition

    Science.gov (United States)

    Mizuno, Yusei; Nakayama, Tadachika; Suematsu, Hisayuki; Suzuki, Tsuneo

    2018-02-01

    Cr–Ga–N thin films were prepared on (100)-oriented MgO single-crystal substrates by pulsed laser deposition at various substrate temperatures. An ablation plasma, generated by irradiating a Cr–10 at. % Ga alloy target with a Nd:YAG laser, was applied to the substrates to deposit the Cr–Ga–N thin films. Rutherford backscattering spectroscopy revealed that the ratio of the amount of Ga to the amount of Cr plus Ga (hereafter Cr+Ga) in all Cr–Ga–N thin films was approximately 10 at. %. X-ray diffraction and microstructural observation indicated that Cr–Ga–N thin films deposited at substrate temperatures (T sub) above 773 K contained two crystal phases: B1 (NaCl type)-CrN and B4 (würtzite type)-GaN. By contrast, Cr–Ga–N thin films deposited at a T sub of 673 K grew epitaxially and were composed of a single B1-(Cr,Ga)N phase, synthesized by substituting some of the Cr atoms in B1-CrN with Ga atoms. The epitaxial B1-(Cr,Ga)N thin films showed a higher hardness than epitaxial CrN films.

  14. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  15. Deposition of fluorocarbon films by Pulsed Plasma Thruster on the anode side

    International Nuclear Information System (INIS)

    Zhang, Rui; Zhang, Daixian; Zhang, Fan; He, Zhen; Wu, Jianjun

    2013-01-01

    Fluorocarbon thin films were deposited by Pulsed Plasma Thruster at different angles on the anode side of the thruster. Density and velocity of the plasma in the plume of the Pulsed Plasma Thruster were determined using double and triple Langmuir probe apparatus respectively. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), scanning probe microscope (SPM) and UV–vis spectrometer. Low F/C ratio (0.64–0.86) fluorocarbon films are deposited. The F/C ratio decreases with angle increasing from 0 degree to 30 degree; however it turns to increase with angle increasing from 45 degree to 90 degree. The films deposited at center angles appear rougher compared with that prepared at angles beyond 45 degree. These films basically show having strong absorption properties for wavelength below 600 nm and having enhanced reflective characteristics. Due to the influence of the chemical composition and the surface morphology of the films, the optical properties of these films also show significant angular dependence.

  16. Indium tin oxide films deposited on polyethylene naphthalate substrates by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G. [Centro de Investigacion y Estudios Avanzados del IPN-Unidad Queretaro, Apdo. postal 1-798, Queretaro, Qro., 76001 (Mexico); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN-Unidad Queretaro, Apdo. postal 1-798, Queretaro, Qro., 76001 (Mexico)], E-mail: rrbon@qro.cinvestav.mx

    2009-02-27

    Indium tin oxide (ITO) thin films were deposited on unheated polyethylene naphthalate substrates by radio-frequency (rf) magnetron sputtering from an In{sub 2}O{sub 3} (90 wt.%) containing SnO{sub 2} (10 wt.%) target. We report the structural, electrical and optical properties of the ITO films as a function of rf power and deposition time. Low rf power values, in the range of 100-130 W, were employed in the deposition process to avoid damage to the plastic substrates by heating caused by the plasma. The films were analyzed by X-ray diffraction and optical transmission measurements. A Hall measurement system was used to measure the carrier concentration and electrical resistivity of the films by the Van der Pauw method. The X-ray diffraction measurements analysis showed that the ITO films are polycrystalline with the bixbite cubic crystalline phase. It is observed a change in the preferential crystalline orientation of the films from the (222) to the (400) crystalline orientation with increasing rf power or deposition time in the sputtering process. The optical transmission of the films was around 80% with electrical resistivity and sheet resistance down to 4.9 x 10{sup -4} {omega}cm and 14 {omega}/sq, respectively.

  17. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    Energy Technology Data Exchange (ETDEWEB)

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: Shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Szivos, Janos; Safran, Gyorgy [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly-Thege ut 29-33 (Hungary)

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  18. Structural characterization of thin films of titanium nitride deposited by laser ablation

    International Nuclear Information System (INIS)

    Castro C, M.A.; Escobar A, L.; Camps C, E.; Mejia H, J.A.

    2004-01-01

    Thin films of titanium nitride were deposited using the technique of laser ablation. It was studied the effect of the density of laser energy used for ablation the target as well as of the pressure of the work gas about the structure and the hardness of the deposited thin films. Depending on the pressure of the work gas films was obtained with preferential orientation in the directions (200) and (111). At a pressure of 1 x 10 -2 Torr only the direction (200) was observed. On the other hand to the pressure of 5 x 10 -3 Torr the deposited material this formed by a mixture of the orientation (200) and (111), being the direction (111) the predominant one. Thin films of Ti N were obtained with hardness of up to 24.0 GPa that makes to these attractive materials for mechanical applications. The hardness showed an approximately linear dependence with the energy density. (Author)

  19. Versatility of metalorganic chemical vapor deposition process for fabrication of high quality YBCO superconducting thin films

    Science.gov (United States)

    Chern, C. S.; Kear, B. H.; Zhao, J.; Norris, P. E.; Li, Y. Q.

    1991-03-01

    YBCO films, having critical current densities in excess of 10 to th