WorldWideScience

Sample records for dense silicon nitride

  1. Microstructure of Spark Plasma-Sintered Silicon Nitride Ceramics

    Science.gov (United States)

    Lukianova, O. A.; Novikov, V. Yu.; Parkhomenko, A. A.; Sirota, V. V.; Krasilnikov, V. V.

    2017-04-01

    The microstructure and phase composition of the high-content Al2O3-Y2O3-doped spark plasma-sintered silicon nitride were investigated. Fully dense silicon nitride ceramics with a typical α-Si3N4 equiaxed structure with average grain size from 200 to 530 nm, high elastic modulus of 288 GPa, and high hardness of 2038 HV were spark plasma sintered (SPSed) at 1550 °C. Silicon nitride with elongated β-Si3N4 grains, higher hardness of 1800 HV, density of 3.25 g/cm3, and Young's modulus 300 GPa SPSed at 1650 °C was also reviewed.

  2. Silicon nitride equation of state

    Science.gov (United States)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  3. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  4. Carbon nitride frameworks and dense crystalline polymorphs

    Science.gov (United States)

    Pickard, Chris J.; Salamat, Ashkan; Bojdys, Michael J.; Needs, Richard J.; McMillan, Paul F.

    2016-09-01

    We used ab initio random structure searching (AIRSS) to investigate polymorphism in C3N4 carbon nitride as a function of pressure. Our calculations reveal new framework structures, including a particularly stable chiral polymorph of space group P 43212 containing mixed s p2 and s p3 bonding, that we have produced experimentally and recovered to ambient conditions. As pressure is increased a sequence of structures with fully s p3 -bonded C atoms and three-fold-coordinated N atoms is predicted, culminating in a dense P n m a phase above 250 GPa. Beyond 650 GPa we find that C3N4 becomes unstable to decomposition into diamond and pyrite-structured CN2.

  5. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    Science.gov (United States)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  6. Pair distribution functions of silicon/silicon nitride interfaces

    Science.gov (United States)

    Cao, Deng; Bachlechner, Martina E.

    2006-03-01

    Using molecular dynamics simulations, we investigate different mechanical and structural properties of the silicon/silicon nitride interface. One way to characterize the structure as tensile strain is applied parallel to the interface is to calculate pair distribution functions for specific atom types. The pair distribution function gives the probability of finding a pair of atoms a distance r apart, relative to the probability expected for a completely random distribution at the same density. The pair distribution functions for bulk silicon nitride reflect the fracture of the silicon nitride film at about 8 % and the fact that the centerpiece of the silicon nitride film returns to its original structure after fracture. The pair distribution functions for interface silicon atoms reveal the formation of bonds for originally unbound atom pairs, which is indicative of the interstitial-vacancy defect that causes failure in silicon.

  7. Dissolution of bulk specimens of silicon nitride

    Science.gov (United States)

    Davis, W. F.; Merkle, E. J.

    1981-01-01

    An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

  8. Transparent polycrystalline cubic silicon nitride

    Science.gov (United States)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  9. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim;

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk...

  10. Low temperature silicon nitride waveguides for multilayer platforms

    Science.gov (United States)

    Domínguez Bucio, T.; Tarazona, A.; Khokhar, A. Z.; Mashanovich, G. Z.; Gardes, F. Y.

    2016-05-01

    Several 3D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However, none of the proposed platforms have demonstrated the integration of active devices. The problem is that typically low loss silicon nitride layers have been fabricated with LPCVD which involves high processing temperatures (<1000 ºC) that affect metallisation and doping processes that are sensitive to temperatures above 400ºC. As a result, we have investigated ammonia-free PECVD and HWCVD processes to obtain high quality silicon nitride films with reduced hydrogen content at low temperatures. Several deposition recipes were defined through a design of experiments methodology in which different combinations of deposition parameters were tested to optimise the quality and the losses of the deposited layers. The physical, chemical and optical properties of the deposited materials were characterised using different techniques including ellipsometry, SEM, FTIR, AFM and the waveguide loss cut-back method. Silicon nitride layers with hydrogen content between 10-20%, losses below 10dB/cm and high material quality were obtained with the ammonia-free recipe. Similarly, it was demonstrated that HWCVD has the potential to fabricate waveguides with low losses due to its capacity of yielding hydrogen contents <10% and roughness <1.5nm.

  11. Reticulated porous silicon nitride-based ceramics

    OpenAIRE

    Mazzocchi, Mauro; Medri, Valentina; Guicciardi, Stefano

    2012-01-01

    The interest towards the production of porous silicon nitride originates from the unique combination of light weight, of mechanical and physical properties typical of this class of ceramics that make them attractive for many engineering applications. Although pores are generally believed to deteriorate the mechanical properties of ceramics (the strength of porous ceramics decreases exponentially with an increase of porosity), the recent literature reports that porous silicon nitride can exhib...

  12. Nonlinear conductivity in silicon nitride

    Science.gov (United States)

    Tuncer, Enis

    2017-08-01

    To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

  13. Silicon nitride ceramic having high fatigue life and high toughness

    Science.gov (United States)

    Yeckley, Russell L.

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  14. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  15. Preparation and dielectric properties of porous silicon nitride ceramics

    Institute of Scientific and Technical Information of China (English)

    LI Jun-qi; LUO Fa; ZHU Dong-mei; ZHOU Wan-cheng

    2006-01-01

    Porous silicon nitride ceramics with difference volume fractions of porosity from 34.1% to 59.2% were produced by adding different amount of the pore-forming agent into initial silicon nitride powder. The microwave dielectric property of these ceramics at a frequency of 9.36 GHz was studied. The crystalline phases of the samples were determined by X-ray diffraction analysis. The influence of porosity on the dielectric properties was evaluated. The results show that α-Si3N4 crystalline phase exists in all the samples while the main crystalline phase of the samples is β-Si3N4,indicating that the a/b transformation happens during the preparation of samples and the transformation is incomplete. There is a dense matrix containing large pores and cavities with needle-shaped and flaky β-Si3N4 grains distributing. The dielectric constant of the ceramics reduces with the increase of porosity.

  16. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  17. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...... specific. Often fusion bonding of silicon nitride surfaces to silicon or silicon dioxide to silicon surfaces is preferred, though Si3N4–Si3N4 bonding is indeed possible and practical for many devices as will be shown in this paper. We present an overview of existing knowledge on Si3N4–Si3N4 bonding and new...... results on bonding of thin and thick Si3N4 layers. The new results include high temperature bonding without any pretreatment, along with improved bonding ability achieved by thermal oxidation and chemical pretreatment. The bonded wafers include both unprocessed and processed wafers with a total silicon...

  18. Wetting and infiltration of nitride bonded silicon nitride by liquid silicon

    Science.gov (United States)

    Schneider, V.; Reimann, C.; Friedrich, J.

    2016-04-01

    Nitride bonded silicon nitride (NBSN) is a promising crucible material for the repeated use in the directional solidification of multicrystalline (mc) silicon ingots for photovoltaic applications. Due to wetting and infiltration, however, silicon nitride in its initial state does not offer the desired reusability. In this work the sessile drop method is used to systematically study the wetting and infiltration behavior of NBSN after applying different oxidation procedures. It is found that the wetting of the NBSN crucible by liquid silicon can be prevented by the oxidation of the geometrical surface. The infiltration of liquid silicon into the porous crucible can be suppressed by oxygen enrichment within the volume of the NBSN, i.e. at the pore walls of the crucibles. The realized reusability of the NBSN is demonstrated by reusing a NBSN crucible six times for the directional solidification of undoped multicrystalline silicon ingots.

  19. Dynamic Characterization of Silicon Nitride Cantilevers

    NARCIS (Netherlands)

    Babaei Gavan, K.

    2009-01-01

    This thesis describes a series of experiments on dynamical characterization of silicon nitride cantilevers. These devices play an important role in micro-and nanoelectromechanical systems (MEMS and NEMS). They consist of a mechanical part, a sensor or actuator, and an electronic part for readout and

  20. Nitridation of silicon by nitrogen neutral beam

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Yasuhiro, E-mail: yasuhirohara2002@yahoo.co.jp [Organization for Research and Development of Innovative Science and Technology, Kansai University, Yamate-cho 3-3-35, Suita 564-8680, Osaka (Japan); Shimizu, Tomohiro; Shingubara, Shoso [Department of Mechanical Engineering, Faculty of Engineering Science, Kansai University, Yamate-cho 3-3-35, Suita 564-8680, Osaka (Japan)

    2016-02-15

    Graphical abstract: - Highlights: • Nitrided silicon was formed by nitrogen neutral beam at room temperature. • Si{sub 3}N{sub 4} layer was formed at the acceleration voltage more than 20 V. • Formed Si{sub 3}N{sub 4} layer show the effective as the passivation film in the wet etching process. - Abstract: Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si{sub 3}N{sub 4} layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si{sub 3}N{sub 4} layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

  1. Dynamic Characterization of Silicon Nitride Cantilevers

    NARCIS (Netherlands)

    Babaei Gavan, K.

    2009-01-01

    This thesis describes a series of experiments on dynamical characterization of silicon nitride cantilevers. These devices play an important role in micro-and nanoelectromechanical systems (MEMS and NEMS). They consist of a mechanical part, a sensor or actuator, and an electronic part for readout and

  2. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  3. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    Science.gov (United States)

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  4. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    Science.gov (United States)

    Lowden, Richard A.

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  5. Silicon Nitride Balls For Cryogenic Bearings

    Science.gov (United States)

    Butner, Myles F.; Ng, Lillian W.

    1990-01-01

    Resistance to wear greater than that of 440C steel. Experiments show lives of ball bearings immersed in liquid nitrogen or liquid oxygen increased significantly when 440C steel balls (running on 440C steel races) replaced by balls of silicon nitride. Developed for use at high temperatures, where lubrication poor or nonexistent. Best wear life of any bearing tested to date and ball material spalls without fracturing. Plans for future tests call for use of liquid oxygen as working fluid.

  6. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    Science.gov (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  7. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  8. Four-Wave Mixing in Silicon-Rich Nitride Waveguides

    DEFF Research Database (Denmark)

    Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

    2015-01-01

    We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

  9. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  10. Silicon nitride film for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El amrani, A.; Menous, I.; Mahiou, L.; Touati, A.; Lefgoum, A. [Silicon Technology Unit. 2, Boulevard Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Algiers (Algeria); Tadjine, R. [Advanced Technologies Development Centre, Cite 20 Aout 1656, Baba hassen, Algiers (Algeria)

    2008-10-15

    In this work, our aim was to determine the deposition parameters leading to optimal optical properties of Silicon nitride (SiN) film for photovoltaic application. The deposition was performed in an industrial pulsed direct-PECVD using a gas mixture of NH{sub 3}/SiH{sub 4}. After defining the optimum deposition parameters, we have chemically evaluated the film quality in BOE solution. Plasma removal of the optimized SiN films from multicrystalline 4-in solar cells allows highlighting and estimating the emitter passivation and ARC effects on the solar cell electrical performance. (author)

  11. Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, K; Feng, J Y; Zhang, Z J [Department of Materials Science and Engineering, Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China)

    2006-09-28

    In the present work we investigated the photoluminescence property of silicon nanocrystals in silicon nitride prepared by ammonia sputtering. Silicon nanocrystals were demonstrated to form even after thermal annealing at 700 deg. C. Compared with the control sample using N{sub 2} as the reactive gas, the luminescence intensity of silicon nanocrystals in silicon nitride prepared by NH{sub 3} sputtering was greatly increased. The improvement in photoluminescence was attributed to the introduction of hydrogen-related bonds, which could well passivate the nonradiative defects existing at the interface between silicon nanocrystals and the silicon nitride matrix.

  12. Indentation fatigue in silicon nitride, alumina and silicon carbide ceramics

    Indian Academy of Sciences (India)

    A K Mukhopadhyay

    2001-04-01

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker’s microhardness tester at various loads in the range 1–20 N. Subsequently, the gradual evolution of the damage was characterized using an optical microscope in conjunction with the image analysing technique. The materials were classified in the order of the decreasing resistance against repeated indentation fatigue at the highest applied load of 20 N. It was further shown that there was a strong influence of grain size on the development of resistance against repeated indentation fatigue on the same spot. Finally, the poor performance of the sintered silicon carbide was found out to be linked to its previous thermal history.

  13. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  14. Comparative infrared study of silicon and germanium nitrides

    Science.gov (United States)

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  15. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  16. A review of oxide, silicon nitride, and silicon carbide brazing

    Energy Technology Data Exchange (ETDEWEB)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  17. Thermal tuners on a Silicon Nitride platform

    CERN Document Server

    Pérez, Daniel; Baños, Rocío; Doménech, José David; Sánchez, Ana M; Cirera, Josep M; Mas, Roser; Sánchez, Javier; Durán, Sara; Pardo, Emilio; Domínguez, Carlos; Pastor, Daniel; Capmany, José; Muñoz, Pascual

    2016-01-01

    In this paper, the design trade-offs for the implementation of small footprint thermal tuners on silicon nitride are presented, and explored through measurements and supporting simulations of a photonic chip based on Mach-Zehnder Interferometers. Firstly, the electrical properties of the tuners are assessed, showing a compromise between compactness and deterioration. Secondly, the different variables involved in the thermal efficiency, switching power and heater dimensions, are analysed. Finally, with focus on exploring the limits of this compact tuners with regards to on chip component density, the thermal-cross talk is also investigated. Tuners with footprint of 270x5 {\\mu}m 2 and switching power of 350 mW are reported, with thermal-cross talk, in terms of induced phase change in adjacent devices of less than one order of magnitude at distances over 20 {\\mu}m. Paths for the improvement of thermal efficiency, power consumption and resilience of the devices are also outlined

  18. Ellipsometric study of silicon nitride on gallium arsenide

    Science.gov (United States)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.

    1982-01-01

    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  19. Infrared Dielectric Properties of Low-stress Silicon Nitride

    Science.gov (United States)

    Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

    2012-01-01

    Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

  20. Effect of oxygen plasma on nanomechanical silicon nitride resonators

    Science.gov (United States)

    Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

    2017-08-01

    Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

  1. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  2. Elastic Properties of Several Silicon Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X.; Metcalf, T. H.; Wang, Q.; Photiadis, D. M.

    2007-01-01

    We have measured the internal friction (Q{sup -1}) of amorphous silicon nitride (a-SiN{sub x}) films prepared by a variety of methods, including low-pressure chemical-vapor deposition (LPCVD), plasma-enhanced chemical-vapor deposition (PECVD), and hot-wire chemical-vapor deposition (HWCVD) from 0.5 K to room temperature. The measurements are made by depositing the films onto extremely high-Q silicon double paddle oscillator substrates with a resonant frequency of {approx}5500 Hz. We find the elastic properties of these a-SiN{sub x} films resemble those of amorphous silicon (a-Si) films, demonstrating considerable variation which depends on the film growth methods and post deposition annealing. The internal friction for most of the films shows a broad temperature-independent plateau below 30 K, characteristic of amorphous solids. The values of Q{sup -1}, however, vary from film to film in this plateau region by more than one order of magnitude. This has been observed in tetrehedrally covalent-bonded amorphous thin films, like a-Si, a-Ge, and a-C. The PECVD films have the highest Q{sup -1} just like a normal amorphous solid, while LPCVD films have an internal friction more than one order of magnitude lower. All the films show a reduction of Q{sup -1} after annealing at 800 C, even for the LPCVD films which were prepared at 850 C. This can be viewed as a reduction of structural disorder.

  3. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  4. Tailor-made functionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Schroën, C.G.P.H.; Smet, de L.C.P.M.; Sudhölter, E.J.R.; Zuilhof, H.

    2004-01-01

    This communication presents the first functionalization of a hydrogen-terminated silicon-rich silicon nitride (Si3Nx) surface with a well-defined, covalently attached organic monolayer. Properties of the resulting monolayers are monitored by measurement of the static water contact angle, X-ray photo

  5. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  6. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2006-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily a

  7. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily a

  8. Method for one-to-one polishing of silicon nitride and silicon oxide

    Science.gov (United States)

    Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

    2009-01-01

    The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

  9. Nitridation of silicon /111/ - Auger and LEED results

    Science.gov (United States)

    Delord, J. F.; Schrott, A. G.; Fain, S. C., Jr.

    1980-01-01

    Clean silicon (111) (7x7) surfaces at up to 1050 C have been reacted with nitrogen ions and neutrals produced by a low energy ion gun. The LEED patterns observed are similar to those previously reported for reaction of silicon (111) (7x7) with NH3. The nitrogen KLL peak exhibits no shift or change in shape with nitride growth. At the same time the magnitude of the elemental silicon LVV peak at 92 eV decreases progressively as a new peak at 84 eV increases. The position of both peaks appears to be independent of the degree of nitridation. Since the Auger spectra are free of oxygen and other impurities, these features can be attributed only to silicon, nitrogen, and their reaction products. Characteristic features of the Auger spectra are related to LEED observations and to the growth of microcrystals of Si3N4.

  10. Silicon nitride coated silicon thin film on three dimensions current collector for lithium ion battery anode

    Science.gov (United States)

    Wu, Cheng-Yu; Chang, Chun-Chi; Duh, Jenq-Gong

    2016-09-01

    Silicon nitride coated silicon (N-Si) has been synthesized by two-step DC sputtering on Cu Micro-cone arrays (CMAs) at ambient temperature. The electrochemical properties of N-Si anodes with various thickness of nitride layer are investigated. From the potential window of 1.2 V-0.05 V, high rate charge-discharge and long cycle test have been executed to investigate the electrochemical performances of various N-Si coated Si-based lithium ion batteries anode materials. Higher specific capacity can be obtained after 200 cycles. The cycling stability is enhanced via thinner nitride layer coating as silicon nitride films are converted to Li3N with covered Si thin films. These N-Si anodes can be cycled under high rates up to 10 C due to low charge transfer resistance resulted from silicon nitride films. This indicates that the combination of silicon nitride and silicon can effectively endure high current and thus enhance the cycling stability. It is expected that N-Si is a potential candidate for batteries that can work effectively under high power.

  11. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2010-01-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0 g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using

  12. Proportional control valves integrated in silicon nitride surface channel technology

    NARCIS (Netherlands)

    Groen, Maarten S.; Groenesteijn, Jarno; Meutstege, Esken; Brookhuis, Robert A.; Brouwer, Dannis M.; Lötters, Joost C.; Wiegerink, Remco J.

    2015-01-01

    We have designed and realized two types of proportional microcontrol valves in a silicon nitride surface channel technology process. This enables on-die integration of flow controllers with other surface channel devices, such as pressure sensors or thermal or Coriolis-based (mass) flow sensors, to o

  13. Dispersion engineering silicon nitride waveguides for broadband nonlinear frequency conversion

    NARCIS (Netherlands)

    Epping, J.P.

    2015-01-01

    In this thesis, we investigated nonlinear frequency conversion of optical wavelengths using integrated silicon nitride (Si3N4) waveguides. Two nonlinear conversion schemes were considered: seeded four-wave mixing and supercontinuum generation. The first—seeded four-wave mixing—is investigated by a n

  14. Preparation and evaluation of silicon nitride matrices for silicon nitride-SiC fiber composites. M.S. Thesis Final Technical Report

    Science.gov (United States)

    Axelson, Scott R.

    1988-01-01

    Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.

  15. Optical stability of silicon nitride MIS inversion layer solar cells

    Science.gov (United States)

    Jaeger, K.; Hezel, R.

    1985-09-01

    For MIS inversion layer solar cells with silicon nitride as an AR coating, accelerated optical stress tests were performed. Degradation of the cell characteristics occurred which was found to be caused by photons with energies equal to or greater than 3.7 eV (wavelength of 335 nm or less). Generation of interface states at the silicon-insulator interface by UV light is shown to be the mechanism responsible. The original cell data could be completely restored by heat treatment (activation energy 0.5 eV) and partially by illumination with short-wavelength light. As the most striking result, however, it is demonstrated that the UV light-induced instability can be drastically improved by incorporation of cesium ions into the silicon nitride layer. An interpretation is given for this effect.

  16. Formation and characterization of DNA microarrays at silicon nitride substrates.

    Science.gov (United States)

    Manning, Mary; Redmond, Gareth

    2005-01-01

    A versatile method for direct, covalent attachment of DNA microarrays at silicon nitride layers, previously deposited by chemical vapor deposition at silicon wafer substrates, is reported. Each microarray fabrication process step, from silicon nitride substrate deposition, surface cleaning, amino-silanation, and attachment of a homobifunctional cross-linking molecule to covalent immobilization of probe oligonucleotides, is defined, characterized, and optimized to yield consistent probe microarray quality, homogeneity, and probe-target hybridization performance. The developed microarray fabrication methodology provides excellent (high signal-to-background ratio) and reproducible responsivity to target oligonucleotide hybridization with a rugged chemical stability that permits exposure of arrays to stringent pre- and posthybridization wash conditions through many sustained cycles of reuse. Overall, the achieved performance features compare very favorably with those of more mature glass based microarrays. It is proposed that this DNA microarray fabrication strategy has the potential to provide a viable route toward the successful realization of future integrated DNA biochips.

  17. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated memb

  18. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  19. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide - Selective functionalization of Si

    NARCIS (Netherlands)

    Liu, Li Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Zuilhof, Han

    2016-01-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be careful

  20. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss....... A sample double ring add-drop filter is presented....

  1. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  2. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  3. Development of high-thermal-conductivity silicon nitride ceramics

    Directory of Open Access Journals (Sweden)

    You Zhou

    2015-09-01

    Full Text Available Silicon nitride (Si3N4 with high thermal conductivity has emerged as one of the most promising substrate materials for the next-generation power devices. This paper gives an overview on recent developments in preparing high-thermal-conductivity Si3N4 by a sintering of reaction-bonded silicon nitride (SRBSN method. Due to the reduction of lattice oxygen content, the SRBSN ceramics could attain substantially higher thermal conductivities than the Si3N4 ceramics prepared by the conventional gas-pressure sintering of silicon nitride (SSN method. Thermal conductivity could further be improved through increasing the β/α phase ratio during nitridation and enhancing grain growth during post-sintering. Studies on fracture resistance behaviors of the SRBSN ceramics revealed that they possessed high fracture toughness and exhibited obvious R-curve behaviors. Using the SRBSN method, a Si3N4 with a record-high thermal conductivity of 177 Wm−1K−1 and a fracture toughness of 11.2 MPa m1/2 was developed. Studies on the influences of two typical metallic impurity elements, Fe and Al, on thermal conductivities of the SRBSN ceramics revealed that the tolerable content limits for the two impurities were different. While 1 wt% of impurity Fe hardly degraded thermal conductivity, only 0.01 wt% of Al caused large decrease in thermal conductivity.

  4. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  5. Antifuse with a single silicon-rich silicon nitride insulating layer

    Science.gov (United States)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  6. Compressive creep of silicon nitride with additives; Fluencia por compressao de nitreto de silicio aditivado

    Energy Technology Data Exchange (ETDEWEB)

    Shibuya, Newton Hissao; Cavalcanti, Celso Berilo Cidade; Piorino Neto, Francisco; Silva, Vitor Alexandre da; Silva, Cosme Roberto Moreira da [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil). Inst. de Aeronautica e Espaco

    1995-12-31

    Manufacturing of engine and turbine components made of silicon nitride based ceramics requires knowledge of thermochemical properties such as resistance to compressive creep. In order to characterize this property a compressive creep apparatus was assembled at AMR/IAE/CTA, able to work at 1450 deg C in a continuous mode. Test pieces were prepared from mixtures of silicon nitride with rare earth carbonate and aluminium nitride. These test pieces were pressureless sintered at 1750 deg C for 30 minutes under nitrogen atmosphere. Experiments showed that rare earth carbonate and aluminium nitride are suitable additives for silicon nitride. (author) 1 fig., 2 tabs.

  7. Silicon Nitride: A Synthetic Mineral for Vertebrate Biology

    Science.gov (United States)

    Pezzotti, Giuseppe; McEntire, Bryan J.; Bock, Ryan; Boffelli, Marco; Zhu, Wenliang; Vitale, Eleonora; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Bal, B. Sonny

    2016-08-01

    The remarkable stoichiometric flexibility of hydroxyapatite (HAp) enables the formation of a variety of charged structural sites at the material’s surface which facilitates bone remodeling due to binding of biomolecule moieties in zwitterionic fashion. In this paper, we report for the first time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and improved osteoconductivity comparable to highly defective, non-stoichiometric natural hydroxyapatite. Si3N4’s zwitterionic-like behavior is a function of the dualism between positive and negative charged off-stoichiometric sites (i.e., N-vacancies versus silanols groups, respectively). Lattice defects at the biomaterial’s surface greatly promote interaction with positively- and negatively-charged functional groups in biomolecules, and result in the biologically effective characteristics of silicon nitride. These findings are anticipated to be a starting point for further discoveries of therapeutic bone-graft substitute materials.

  8. Silicon Nitride Waveguides for Plasmon Optical Trapping and Sensing Applications

    CERN Document Server

    Zhao, Qiancheng; Huang, Yuewang; Capolino, Filippo; Boyraz, Ozdal

    2015-01-01

    We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost manner. The waveguides embrace not only low propagation loss and high nonlinearity, but also the inborn merits of combining micro-fluidic channel and waveguide together. Analyte contained in the trapezoidal trench channel can interact with the evanescent field from the waveguide beneath. The evanescent field can be further enhanced by plasmonic nanostructures. With the help of gold nano bowtie antennas, the studied waveguide shows outstanding trapping capability on 10 nm polystyrene nanoparticles. We show that the bowtie antennas can lead to 60-fold enhancement of electric field in the antenna gap. The optical trapping force on a nanoparticle is boosted by three orders of magnitude. A strong tendency shows the nanoparticle is likely to move to the high field strength region,...

  9. Research on Abrasives in the Chemical Mechanical Polishing Process for Silicon Nitride Balls

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Silicon nitride (Si 3N 4) has been the main material for balls in ceramic ball bearings, for its lower density, high strength, high hardness, fine thermal stability and anticorrosive, and is widely used in various fields, such as high speed and high temperature areojet engines, precision machine tools and chemical engineer machines. Silicon nitride ceramics is a kind of brittle and hard material that is difficult to machining. In the traditional finishing process of silicon nitride balls, balls are lapped...

  10. Synthesis of silicon nitride particles in pulsed Rf plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.; Babu, S.V.

    1995-11-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  11. Sintering of nano crystalline silicon carbide doping with aluminium nitride

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-04-01

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid sintering process.

  12. Fabrication of hexagonal gallium nitride films on silicon (111) substrates

    Institute of Scientific and Technical Information of China (English)

    YANG Li; XUE Chengshan; WANG Cuimei; LI Huaixiang; REN Yuwen

    2003-01-01

    Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111 ) substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM),and transmission electron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.

  13. Spectroscopic ellipsometry characterization of thin-film silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

    1997-05-01

    We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

  14. Sintering of silicon nitride ceramics with magnesium silicon nitride and yttrium oxide as sintering aids

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, J; Xu, J Y [Shanghai Institute of Technology, Shanghai 200235 (China); Peng, G H [Guangxi Normal University, Guilin 541004, Guangxi (China); Zhuang, H R; Li, W L; Xu, S Y [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mao, Y J, E-mail: guojianjiang@sit.edu.cn [Shanghai University, Shanghai 200444 (China)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramics had been produced through pressureless sintering and hot-pressing sintering with MgSiN{sub 2}-Y{sub 2}O{sub 3} or only MgSiN{sub 2} as sintering aids. The influences of the amount of MgSiN{sub 2} and Y{sub 2}O{sub 3} and sintering methods on the properties of Si{sub 3}N{sub 4} ceramics were investigated. The results show that the bend strength of Si{sub 3}N{sub 4} ceramic fabricated through pressureless sintering at 1820 deg. C for 4 h with 5.6 wt.% MgSiN{sub 2}-15.8 wt.% Y{sub 2}O{sub 3} as sintering additive could achieve 839 MPa. However, the bend strength of Si{sub 3}N{sub 4} ceramic produced by hot-pressing sintering at 1750 deg. C for 1 h under uniaxial pressure of 20 MPa with 4.76 wt.% MgSiN{sub 2} was 1149 MPa. The thermal conductivity of the Si{sub 3}N{sub 4} ceramic 2 3 4 could reach to 129 W{center_dot}m{sup -1{center_dot}}K{sup 1}. The present work demonstrated that MgSiN{sub 2} aids and hot-pressing sintering were effective to improve the thermal conductivity of Si{sub 3}N{sub 4} ceramic.

  15. High-Index Contrast Silicon Rich Silicon Nitride Optical Waveguides and Devices

    DEFF Research Database (Denmark)

    Philipp, Hugh Taylor

    2004-01-01

    This research focused on the realization of high-density integrated optical devices made with high-index contrast waveguides. The material platform used for to develop these devices was modeled after standard silicon on silicon technology. The high-index waveguide core material was silicon rich...... silicon nitride. This provided a sharp contrast with silica and made low-loss waveguide bending radii less than 25mm possible. An immediate consequence of such small bending radii is the ability to make practical ring resonator based devices with a large free spectral range. Several ring resonator based...

  16. Silicon nitride for lightweight stiff structures for optical instruments

    Science.gov (United States)

    Berroth, Karl; Devilliers, Christophe; Luichtel, Georg

    2009-08-01

    Due to their very specific set of material properties, silicon nitride and silicon carbide have gained a lot of interest in the last 20 years. Moreover, many new approaches in technical equipment and processes were enabled with corresponding research and production activities. Also large efforts were made at FCT during the last years, to get able to supply even very large and complex shaped components made of sintered silicon carbide (SSiC) and of gas pressure sintered silicon nitride (GPSN) ceramics. This approach has opened new applications and markets for such ceramic materials. On the other side, designers and engineers are now allowed to think much more complex in designing of ceramic components. In this paper, a new rapid prototyping routine for very complex components as well as the corresponding materials will be presented. Components for optical equipment in innovative avionic and space applications, and more conventional technologies are described. Not only their unique key intrinsic properties, like high Youngs Modulus, very low CTE, very high strength and fracture toughness for a ceramic but also newly developed and adopted shaping, sintering and machining technologies in both green and sintered state have let to highly valued products. This enabled FCT to offer Carl Zeiss Optronics using silicon nitride for a newly designed, very complex housing structure of an avionic pod camera. Due to a very low CTE, high stiffness and less weight, an improved performance was reached. Also Thales Alenia Space is engaged since some years in activities to develop and qualify Silicon nitride ceramics for space projects. Extremely stiff, very lightweight and large truss space structures with a very low CTE, high rigidity and no outgasing for satellites can now be realized. Deep tests sequence has been performed to qualify truss beams and end fittings made in the same material. Also advanced dynamic testing equipment for avionic turbine blades requires new approaches. In

  17. Spectroscopic ellipsometry characterization of microwave CVD grown silicon nanoparticles embedded in a silicon nitride matrix

    Energy Technology Data Exchange (ETDEWEB)

    Keita, A-S; Naciri, A En [LPMD, Universite Paul Verlaine-Metz, 1 Bd Arago, 57070 Metz - France (France); Delachat, F; Carrada, M; Ferblantier, G; Slaoui, A, E-mail: alsaleh.keita@univ-metz.fr [InESS, CNRS/UdS, 23 rue du Loess, BP 20, 67037, Strasbourg Cedex 2 (France)

    2009-11-15

    Plasma Enhanced Vapour Deposition (PECVD) is used to elaborate silicon nanoparticles (np-Si) embedded in silicon nitride (Si{sub 3}N{sub 4}) layers. The samples have been produced for various NH{sub 3} flows. The np-Si dielectric function (DF) have been determined by spectroscopic ellipsometry (SE) in the wavelength range from 210 nm to 880 nm. Thanks to ellipsometric modeling it has been possible to study the np-Si physical properties.

  18. Silicon and nitride FETs for THz sensing

    Science.gov (United States)

    Shur, M.

    2011-06-01

    Traditional THz electronics is using nonlinear properties of Schottky diodes for THz detectors and mixers and Gunn diodes driving frequency multiplier Schottky diode chains. Recently, ultra-short channel silicon CMOS and nitridebased transistors have demonstrated THz performance. New approaches use excitations of electron density in FET channels - called plasma waves - to generate and detect THz radiation, and extremely high sheet electron density in short channel AlN/GaN based HEMTs makes them especially suitable for applications in THz plasmonic devices.

  19. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; Rath, J.K.; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, a

  20. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...... temperature has an average hardness of 35.31 GPa, slightly larger than SiO2 stishovite, which is often referred to as the third hardest material after diamond and cubic boron nitride. The cubic phase is stable up to 1673 K in air. At 1873 K, alpha -and beta -Si3N4 phases are observed, indicating a phase...... transformation sequence of c-to-alpha -to-beta -Si3N4 phases....

  1. Slip Casting and Green Body Evaluation of 6% Yttria, 2% Alumina Silicon Nitride

    Science.gov (United States)

    1991-12-01

    Some Properrie of Aqucouw Silicon Nitride SuN- pensons. Ponrahkovaya Metallurgrya. no. 3 (159), March 1976, p. 37. 7. GREIL. P., NAGEL. A., STADELMANN ...H., and PETZOW, G. Revie%, Colloidal Proce=ing of Silicon Nitride Ceramics. Ceramic Materi- als and Componenls for Engines, p. 319. 8. STADELMANN II

  2. Low noise high-Tc superconducting bolometers on silicon nitride membranes for far-infrared detection

    NARCIS (Netherlands)

    Nivelle, de M.J.M.E.; Bruijn, M.P.; Vries, de R.; Wijnbergen, J.J.; Korte, de P.A.J.; Sanchez, S.; Elwenspoek, M.; Heidenblut, T.; Schwierzi, B.; Michalke, W.; Steinbeiss, E.

    1997-01-01

    High-Tc GdBa2Cu3O7 – delta superconductor bolometers with operation temperatures near 89 K, large receiving areas of 0.95 mm2 and very high detectivity have been made. The bolometers are supported by 0.62 µm thick silicon nitride membranes. A specially developed silicon-on-nitride layer was used to

  3. Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide

    DEFF Research Database (Denmark)

    Liu, Xing; Pu, Minhao; Zhou, Binbin;

    2016-01-01

    We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides...... the pump in the telecom band....

  4. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.;

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical tel...

  5. RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

    Science.gov (United States)

    Grill, A.; Aron, P. R.

    1983-01-01

    Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

  6. RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

    Science.gov (United States)

    Grill, A.; Aron, P. R.

    1983-01-01

    Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

  7. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Etching and Chemical Control of the Silicon Nitride Surface.

    Science.gov (United States)

    Brunet, Marine; Aureau, Damien; Chantraine, Paul; Guillemot, François; Etcheberry, Arnaud; Gouget-Laemmel, Anne Chantal; Ozanam, François

    2017-01-25

    Silicon nitride is used for many technological applications, but a quantitative knowledge of its surface chemistry is still lacking. Native oxynitride at the surface is generally removed using fluorinated etchants, but the chemical composition of surfaces still needs to be determined. In this work, the thinning (etching efficiency) of the layers after treatments in HF and NH4F solutions has been followed by using spectroscopic ellipsometry. A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray photoelectron spectroscopy, and colorimetry. Si-F bonds are the majority species present at the surface after silicon nitride etching; some Si-OH and a few Si-NHx bonds are also present. No Si-H bonds are present, an unfavorable feature for surface functionalization in view of the interest of such mildly reactive groups for achieving stable covalent grafting. Mechanisms are described to support the experimental results, and two methods are proposed for generating surface SiH species: enriching the material in silicon, or submitting the etched surface to a H2 plasma treatment.

  9. Quantum Cavity Optomechanics with Phononic Bandgap Shielded Silicon Nitride Membranes

    DEFF Research Database (Denmark)

    Nielsen, William Hvidtfelt Padkær

    pressure, andthe achievement of strong correlations between light at mechanics, manifested asponderomotive squeezing. e next step invariably seems to be the incorporationof cavity optomechanical systems in more complex constellations, in some sensemimicking what has already been achieved with atoms.......In this work, we report on the progress of bringing a cavity optomechanicalsystem “up to speed” for the later integration into a hybrid atomic-opticalmechanicalentanglement experiment. The optomechanical system in considerationconsists of a highly stressed stoichiometric silicon-nitride membrane placedbetween...

  10. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  11. Development of the microstructure of the silicon nitride based ceramics

    Directory of Open Access Journals (Sweden)

    Bressiani J.C.

    1999-01-01

    Full Text Available Basic regularities of silicon nitride based materials microstructure formation and development in interrelation with processing conditions, type of sintering additives, and starting powders properties are discussed. Models of abnormal or exaggerated grain growth are critically reassessed. Results of several model experiments conducted in order to determine the most important factors directing the microstructure formation processes in RE-fluxed Si3N4 ceramics are reviewed. Existing data on the mechanisms governing the microstructure development of Si3N4-based ceramics are analyzed and several principles of microstructure tailoring are formulated.

  12. Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xian-Gao; HUANG Xin-Fan; CHEN Kun-Ji; QIAN Bo; CHEN San; DING Hong-Lin; LIU Sui; WANG Xiang; XU Jun; LI Wei

    2008-01-01

    Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and experimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed.The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities.Experimentally,the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements.It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra.This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.

  13. Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, V A [Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2008-07-31

    In addition to amorphous SiO{sub 2} and Si{sub 3}N{sub 4}, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiO{sub x}N{sub y}, SiN{sub x}, and SiO{sub x} compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical - specifically, optical and electrical - properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized. (reviews of topical problems)

  14. An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer

    Directory of Open Access Journals (Sweden)

    2009-02-01

    Full Text Available A resonant microbeam accelerometer of a novel highly symmetric structure based on MEMS bulk-silicon technology is proposed and some numerical modeling results for this scheme are presented. The accelerometer consists of two proof masses, four supporting hinges, two anchors, and a vibrating triple beam, which is clamped at both ends to the two proof masses. LPCVD silicon rich nitride is chosen as the resonant triple beam material, and parameter optimization of the triple-beam structure has been performed. The triple beam is excited and sensed electromagnetically by film electrodes located on the upper surface of the beam. Both simulation and experimental results show that the novel structure increases the scale factor of the resonant accelerometer, and ameliorates other performance issues such as cross axis sensitivity of insensitive input acceleration, etc.

  15. Optimization of time–temperature schedule for nitridation of silicon compact on the basis of silicon and nitrogen reaction kinetics

    Indian Academy of Sciences (India)

    J Rakshit; P K Das

    2000-08-01

    A time–temperature schedule for formation of silicon–nitride by direct nitridation of silicon compact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C, 1300°C, 1350°C and 1400°C). From kinetic study, three different temperature schedules were selected each of duration 20 h in the temperature range 1250°–1450°C, for complete nitridation. Theoretically full nitridation (100% i.e. 66.7% weight gain) was not achieved in the product having no unreacted silicon in the matrix, because impurities in Si powder and loss of material during nitridation would result in 5–10% reduction of weight gain. Green compact of density < 66% was fully nitrided by any one of the three schedules. For compact of density > 66%, the nitridation schedule was maneuvered for complete nitridation. Iron promotes nitridation reaction. Higher weight loss during nitridation of iron doped compact is the main cause of lower nitridation gain compared to undoped compact in the same firing schedule. Iron also enhances the amount of -Si3N4 phase by formation of low melting FeSi phase.

  16. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  17. Advanced optical modelling of dynamically deposited silicon nitride layers

    Science.gov (United States)

    Borojevic, N.; Hameiri, Z.; Winderbaum, S.

    2016-07-01

    Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc-Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc-Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.

  18. Si-rich Silicon Nitride for Nonlinear Signal Processing Applications.

    Science.gov (United States)

    Lacava, Cosimo; Stankovic, Stevan; Khokhar, Ali Z; Bucio, T Dominguez; Gardes, F Y; Reed, Graham T; Richardson, David J; Petropoulos, Periklis

    2017-02-02

    Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm(-1)). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

  19. Research on the Fe-silicon nitride material self-producing N2 at high temperature

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The Fe-silicon nitride synthesized by flashing combustion process was studied to determine the reaction temperature between Fe and silicon nitride, the account of N2 given out in the course of the reaction, and the change of the microstructure during calcination. The results showed that at 1127.2℃ the Fe-silicon nitride self-reacts and releases N2 and under 101.3 kPa the volume of N2 given out in the course of the reaction is 20 times more than that of the starting material. N2 is produced quickly, and completes in several decade seconds. With the producing of N2, the structure of Silicon Nitride around Fe becomes loose and porous, or cracks are formed by the reaction between Fe and silicon nitride. So if it is made use of that Fe-silicon nitride self-producing N2 at the high temperature, the performance of the material on a base of Fe-silicon nitride could be greatly improved.

  20. Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Wugang [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Yao, Wei [Shenzhen Institute of Huazhong University of Science and Technology, Shenzhen 518000 (China); Wen, Xixing [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-10-01

    Highlights: • Amorphous silicon quantum dots (a-Si QDs) embedded in silicon nitride were fabricated using plasma-enhanced chemical vapor deposition (PECVD). • Two different excitation sources were used to investigate the PL mechanisms. • Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated and the carrier transport mechanisms were investigated. - Abstract: Silicon-rich silicon nitride (SRSN) films were prepared on p-type silicon substrates using plasma-enhanced chemical vapor deposition (PECVD). Small size (∼3 nm) amorphous silicon quantum dots (a-Si QDs) were obtained after 1100 °C annealing. Two different excitation sources, namely 325 nm and 532 nm lasers, were introduced to investigate the photoluminescence (PL) properties. The PL bands pumped by 325 nm laser at ∼2.90 eV and ∼1.80 eV were contributed to the radiative centers from N dangling bonds (DBs), while the dominant PL bands at 2.10 eV were ascribed to the instinct PL centers in the nitride matrix. However, PL emissions from band tail luminescence and quantum confined effect (QCE) in a-Si QDs were found under the excitation of 532 nm laser. Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated. Intensely red light emission was observed by naked eyes at room temperature under forward 20 V. Three different carrier transport mechanisms, namely Poole–Frenkel (P–F) tunneling, Fowler–Nordheim (F–N) tunneling and space charge limited current (SCLC), were found to fit different electric field regions. These results help to understand the PL mechanisms and to optimize the fabrication of a-Si QD LED.

  1. Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oliphant, C.J. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Arendse, C.J., E-mail: cjarendse@uwc.ac.za [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Muller, T.F.G. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Jordaan, W.A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Knoesen, D. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa)

    2015-01-30

    Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas. - Highlights: • Tantalum filament degrades and fails during hot-wire CVD of silicon nitride thin films. • An encapsulating silicon nitride layer is deposited at the cooler ends. • Electron backscatter diffraction reveals Ta-silicides and -nitrides with a Ta core. • Filament failure occurs at hot centre regions due to different mechanical properties of Ta, its silicides and nitrides.

  2. Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride

    CERN Document Server

    Kato, H; Ohki, Y; Seol, K S; Noma, T

    2003-01-01

    Electrical conduction at high fields was examined in a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical vapour deposition. It was shown that the conduction is attributable to the Poole-Frenkel (PF) emission in the two materials. The energy depths of the PF sites and the dependences on the sample's chemical composition are quite similar for the two samples. It is considered that the PF sites in the two materials are identical.

  3. Experimental Research on Residual Stress in Surface of Silicon Nitride Ceramic Balls

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The influence of the residual stress in surface of ceramic balls on the fatigue life is large, because the life of silicon nitride ball bearings is more sensitive to the load acted on the bearings than the life of all-steel ball bearings. In this paper, the influence of thermal stress produced in sintering and mechanical stress formed in lapping process on residual stress in surface of silicon nitride ceramic balls was discussed. The residual compress stress will be formed in the surface of silicon nitride ...

  4. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  5. Freeze granulation for the processing of silicon nitride ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Lyckfeldt, O. [Swedish Ceramic Inst., Goeteborg (Sweden); Rundgren, K. [Permascand AB, Ljungaverk (Sweden); Sjoestedt, M. [PowderPro HB, Hisings Backa (Sweden)

    2004-07-01

    Freeze granulation (LS-2, PowderPro HB, Sweden) has been demonstrated as a favourable alternative to conventional granulation methods (spray drying, sieve granulation etc) in the production of granules for the pressing of high-performance ceramic powders. Freeze granulation/freeze drying prevents the migration of pressing aids or particle fines to the granule surface, as is the case in spray drying. This ensures granule homogeneity and an easy breakdown of granules during pressing. This, in turn, results in defect minimisation and optimal conditions for the sintering and the development of the desired material properties. In this study silicon nitride materials have been produced using freeze granulation, pressing and sintering to validate the performance. Materials with competitive properties were manufactured based on medium-cost, direct-nitrided powders (SicoNide P95, Permascand AB, Sweden), various pressing and sintering aid compositions as well as various pressing and sintering schedules. MgO vs Fe{sub 2}O{sub 3} as sintering aid, PEG vs PVA as binder and higher pressure at the initial uniaxial pressing were found to promote the sintering performance. (orig.)

  6. Soliton repetition rate in a silicon-nitride microresonator

    CERN Document Server

    Bao, Chengying; Wang, Cong; Jaramillo-Villegas, Jose A; Leaird, Daniel E; Qi, Minghao; Weiner, Andrew M

    2016-01-01

    The repetition rate of a Kerr comb comprising a single soliton in an anomalous dispersion silicon nitride microcavity is measured as a function of pump frequency tuning. The contributions from the Raman soliton self-frequency shift (SSFS) and from thermal effects are evaluated both experimentally and theoretically; the SSFS is found to dominate the changes in repetition rate. The relationship between the changes in repetition rate and pump frequency detuning is found to be independent of the nonlinearity coefficient and dispersion of the cavity. Modeling of the repetition rate change by using the generalized Lugiato-Lefever equation is discussed; the Kerr shock is found to have only a minor effect on repetition rate for cavity solitons with duration down to ~50 fs.

  7. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  8. Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, A; Idrobo, J C; Cinibulk, M K; Kisielowski, C; Browning, N D; Ritchie, R O

    2004-10-12

    This investigation examines the interface atomic structure and bonding characteristics in an advanced ceramic, obtaining new and unique experimental information that will help to understand and improve the properties of ceramics. Unique direct atomic resolution images have been obtained that illustrate how a range of rare-earth atoms bond to the interface between the intergranular phase and the matrix grains in an advanced silicon nitride ceramic. It has been found that each rare-earth atom bonds to the interface at a different location, depending on atom size, electronic configuration and the presence of oxygen at the interface. This is the key factor to understanding the origin of the mechanical properties in these ceramics and will enable precise tailoring in the future to critically improve the materials performance in wide-ranging applications.

  9. Soliton repetition rate in a silicon-nitride microresonator.

    Science.gov (United States)

    Bao, Chengying; Xuan, Yi; Wang, Cong; Jaramillo-Villegas, Jose A; Leaird, Daniel E; Qi, Minghao; Weiner, Andrew M

    2017-02-15

    The repetition rate of a Kerr comb composed of a single soliton in an anomalous group velocity dispersion silicon-nitride microcavity is measured as a function of pump frequency. By comparing operation in the soliton and non-soliton states, the contributions from the Raman soliton self-frequency shift (SSFS) and the thermal effects are evaluated; the SSFS is found to dominate the changes in the repetition rate, similar to silica cavities. The relationship between the changes in the repetition rate and the pump frequency detuning is found to be independent of the nonlinearity coefficient and dispersion of the cavity. Modeling of the repetition rate change by using the generalized Lugiato-Lefever equation is discussed; the Kerr shock is found to have only a minor effect on repetition rate for cavity solitons with duration down to ∼50  fs.

  10. AFM study of forces between silica, silicon nitride and polyurethane pads.

    Science.gov (United States)

    Sokolov, Igor; Ong, Quy K; Shodiev, Hasan; Chechik, Nina; James, David; Oliver, Mike

    2006-08-15

    Interaction of silica and silicon nitride with polyurethane surfaces is rather poorly studied despite being of great interest for modern semiconductor industry, e.g., for chemical-mechanical planarization (CMP) processes. Here we show the results from the application of the atomic force microscopy (AFM) technique to study the forces between silica or silicon nitride (AFM tips) and polyurethane surfaces in aqueous solutions of different acidity. The polyurethane surface potentials are derived from the measured AFM data. The obtained potentials are in rather good agreement with measurements of zeta-potentials using the streaming-potentials method. Another important parameter, adhesion, is also measured. While the surface potentials of silica are well known, there are ambiguous results on the potentials of silicon nitride that is naturally oxidized. Deriving the surface potential of the naturally oxidized silicon nitride from our measurements, we show that it is not oxidized to silica despite some earlier published expectations.

  11. Nanomodeling of Nonlinear Thermoelastic Behavior of AA5454/ Silicon Nitride Nanoparticulate Metal Matrix Composites

    Directory of Open Access Journals (Sweden)

    Chennakesava R Alavala

    2016-01-01

    Full Text Available The aim of the present work was to estimate non-linear thermoelastic behavior of three-phase AA5454/silicon nitride nanoparticle metal matrix composites. The thermal loading was varied from subzero temperature to under recrystallization temperature. The RVE models were used to analyze thermo-elastic behavior. The AA5454/silicon nitride nanoparticle metal matrix composites have gained the elastic modulus below 0oC and lost at high temperatures.

  12. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    Science.gov (United States)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

  13. A high-Tc superconductor bolometer on a silicon nitride membrane

    NARCIS (Netherlands)

    Sánchez, S.; Elwenspoek, M.C.; Gui, C.; Nivelle, de M.J.M.E.; Vries, de R.J.; Korte, de P.A.J.; Bruijn, M.P.; Wijnbergen, J.J.; Michalke, W.; Steinbeiss, E.; Heidenblut, T.; Schwierzi, B.

    1997-01-01

    In this paper we describe the design, fabrication and performance of a high-Tc GdBa2Cu3O7-δ superconductor bolometer positioned on a 2×2 mm2, 1 μm thick silicon nitride membrane. The bolometer structure has an effective area of 0.64 mm2, and was grown on a specially developed Silicon-On-Nitride laye

  14. Application of Silicon Nitride (Si3N4) Ceramics in Ball Bearing

    OpenAIRE

    2016-01-01

    This paper is discus about silicon nitride ceramics in application to ball bearing. Silicon nitride (Si3N4) have advance properties such as consistent at temperature operation up to 1000°C, greater thermal shock resistance, lower density and low thermal expansion. This properties gives some benefit for ball bearing material such as higher running speed, reduce vibration of the shaft, will improve the life time and maintenance cost, lower heat generated, less energy consumption, lower wear ...

  15. Bio-functionalization of silicon nitride-based piezo-resistive microcantilevers

    Indian Academy of Sciences (India)

    Nitin S Kale; Manoj Joshi; P Nageswara Rao; S Mukherji; V Ramgopal Rao

    2009-08-01

    Methods of bio-functionalize silicon nitride involve process steps to convert it into an oxynitride via plasma implantation techniques. Such methods can potentially damage microstructures such as cantilevers. In this paper, we report successful bio-functionalization of Hotwire CVD silicon nitride-based piezo-resistive cantilevers without any oxygen plasma treatment. Process to fabricate such structures and to bio-functionalize them is discussed in detail.

  16. Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Jhang, Pei-Ci; Lu, Chi-Pin; Shieh, Jung-Yu; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan

    2017-07-01

    An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH2Cl2) and that of ammonia (NH3) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was easily decomposed to reactive radicals by RF power activating so that the N-rich silicon nitride was easily formed by excited ammonia radicals. The growth kinetics of N-rich silicon nitride were examined at various deposition temperatures ranging from 400 °C to 630 °C; the activation energy (Ea) decreased as the deposition temperature decreased below 550 °C. N-rich silicon nitride film with a wide range of values of refractive index (RI) (RI = 1.86-2.00) was obtained by regulating the deposition temperature. At the optimal deposition temperature, the effects of RF power, NH3 flow rate and NH3 flow time were on the characteristics of the N-rich silicon nitride film were evaluated. The results thus reveal that the properties of the N-rich silicon nitride film that was formed by under plasma-enhanced atomic layer deposition (PEALD) are dominated by deposition temperature. In charge trap flash (CTF) study, an N-rich silicon nitride film was applied to MAONOS device as a charge-trapping layer. The films exhibit excellent electron trapping ability and favor a fresh cell data retention performance as the deposition temperature decreased.

  17. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  18. Synthesis and characterization of nano silicon and titanium nitride powders using atmospheric microwave plasma technique

    Indian Academy of Sciences (India)

    S Mahendra Kumar; K Murugan; S B Chandrasekhar; Neha Hebalkar; M Krishna; B S Satyanarayana; Giridhar Madras

    2012-05-01

    We have demonstrated a simple, scalable and inexpensive method based on microwave plasma for synthesizing 5 to 10 g/h of nanomaterials. Luminescent nano silicon particles were synthesized by homogenous nucleation of silicon vapour produced by the radial injection of silicon tetrachloride vapour and nano titanium nitride was synthesized by using liquid titanium tetrachloride as the precursor. The synthesized nano silicon and titanium nitride powders were characterized by XRD, XPS, TEM, SEM and BET. The characterization techniques indicated that the synthesized powders were indeed crystalline nanomaterials.

  19. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    Science.gov (United States)

    Becher, Paul F.; Lin, Hua-Tay

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  20. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  1. Controlled Oxidation, Biofunctionalization, and Patterning of Alkyl Monolayers on Silicon and Silicon Nitride Surfaces using Plasma Treatment

    NARCIS (Netherlands)

    Rosso, M.; Giesbers, M.; Schroën, C.G.P.H.; Zuilhof, H.

    2010-01-01

    A new method is presented for the fast and reproducible functionalization of silicon and silicon nitride surfaces coated with covalently attached alkyl monolayers. After formation of a methyl-terminated 1-hexadecyl monolayer on H-terminated Si(100) and Si(111) surfaces, short plasma treatments (1-3

  2. Silicon-Nitride Platform for Narrowband Entangled Photon Generation

    CERN Document Server

    Ramelow, Sven; Clemmen, Stéphane; Orquiza, Daniel; Luke, Kevin; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising fo...

  3. Thermal Residual Stress in Environmental Barrier Coated Silicon Nitride - Modeled

    Science.gov (United States)

    Ali, Abdul-Aziz; Bhatt, Ramakrishna T.

    2009-01-01

    When exposed to combustion environments containing moisture both un-reinforced and fiber reinforced silicon based ceramic materials tend to undergo surface recession. To avoid surface recession environmental barrier coating systems are required. However, due to differences in the elastic and thermal properties of the substrate and the environmental barrier coating, thermal residual stresses can be generated in the coated substrate. Depending on their magnitude and nature thermal residual stresses can have significant influence on the strength and fracture behavior of coated substrates. To determine the maximum residual stresses developed during deposition of the coatings, a finite element model (FEM) was developed. Using this model, the thermal residual stresses were predicted in silicon nitride substrates coated with three environmental coating systems namely barium strontium aluminum silicate (BSAS), rare earth mono silicate (REMS) and earth mono di-silicate (REDS). A parametric study was also conducted to determine the influence of coating layer thickness and material parameters on thermal residual stress. Results indicate that z-direction stresses in all three systems are small and negligible, but maximum in-plane stresses can be significant depending on the composition of the constituent layer and the distance from the substrate. The BSAS and REDS systems show much lower thermal residual stresses than REMS system. Parametric analysis indicates that in each system, the thermal residual stresses can be decreased with decreasing the modulus and thickness of the coating.

  4. Dielectric functions of Si nanoparticles within a silicon nitride matrix

    Energy Technology Data Exchange (ETDEWEB)

    Keita, A.S.; En Naciri, A. [Laboratoire de Physique des Milieux Denses (LPMD), Universite Paul Verlaine-Metz, Metz (France); Delachat, F.; Carrada, M.; Ferblantier, G.; Slaoui, A. [Institut d' Electronique du Solide et des Systemes (InESS), CNRS/UdS, Strasbourg (France)

    2010-02-15

    We report on the study of the influence of ammonia flow on physical properties of plasma enhanced chemical vapor deposition (PECV)-grown silicon nanoparticles (np-Si) within a silicon nitride matrix. To achieve this goal, we have used spectroscopic ellipsometry (SE) to determine the np-Si dielectric functions (DFs). On the one hand, the DF have been modeled using single parametric oscillators given by Tauc-Lorentz and Forouhi-Bloomer dispersion models. On the other hand, wavelength-by-wavelength numerical inversion, carried out without considering any fitting parameter, have represented another way to derive the DFs of the np-Si. Besides a comparison has been done between results given by Bruggeman effective medium approximation (BEMA) and Maxwell-Garnett law. The results have shown that SE can be used to find out the band gap and mean size of np-Si according to quantum confinement theory. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Molecular Surveillance of Viral Processes Using Silicon Nitride Membranes

    Directory of Open Access Journals (Sweden)

    Deborah F. Kelly

    2013-03-01

    Full Text Available Here we present new applications for silicon nitride (SiN membranes to evaluate biological processes. We determined that 50-nanometer thin films of SiN produced from silicon wafers were sufficiently durable to bind active rotavirus assemblies. A direct comparison of SiN microchips with conventional carbon support films indicated that SiN performs equivalent to the traditional substrate to prepare samples for Electron Microscopy (EM imaging. Likewise, SiN films coated with Ni-NTA affinity layers concentrated rotavirus particles similarly to affinity-coated carbon films. However, affinity-coated SiN membranes outperformed glow-discharged conventional carbon films 5-fold as indicated by the number of viral particles quantified in EM images. In addition, we were able to recapitulate viral uncoating and transcription mechanisms directed onto the microchip surfaces. EM images of these processes revealed the production of RNA transcripts emerging from active rotavirus complexes. These results were confirmed by the functional incorporation of radiolabeled nucleotides into the nascent RNA transcripts. Collectively, we demonstrate new uses for SiN membranes to perform molecular surveillance on life processes in real-time.

  6. Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Uchida, Giichiro; Yamamoto, Kosuke; Kawashima, Yuki; Sato, Muneharu; Nakahara, Kenta; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka (Japan); Kamataki, Kunihiro [Center for Reserch and Advancement in Higher Education, Kyushu University, Fukuoka (Japan); Kondo, Michio [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)

    2011-10-15

    We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH{sub 4}/H{sub 2} and N{sub 2} multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    Science.gov (United States)

    babu, G. Anandha; Takahashi, Isao; Matsushima, Satoru; Usami, Noritaka

    2016-05-01

    We propose to utilize single layer silicon beads (SLSB) coated with silicon nitride as cost-effective seed layer to grow high-quality multicrystalline silicon (mc-Si) ingot. The texture structure of silicon nitride provides a large number of nucleation sites for the fine grain formation at the bottom of the crucible. No special care is needed to prevent seed melting, which would lead to decrease of red zone owing to decrease of feedstock melting time. As we expected, mc-Si ingot seeded with SLSB was found to consist of small, different grain orientations, more uniform grain distribution, high percentage of random grain boundaries, less twin boundaries, and low density of dislocation clusters compared with conventional mc-Si ingot grown under identical growth conditions. These results show that the SLSB seeded mc-Si ingot has enhanced ingot quality. The correlation between grain boundary structure and defect structure as well as the reason responsible for dislocation clusters reduction in SLSB seeded mc-Si wafer are also discussed.

  8. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

    NARCIS (Netherlands)

    Nguyen, A.T.; Baggerman, J.; Paulusse, J.M.J.; Rijn, van C.J.M.; Zuilhof, H.

    2011-01-01

    Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable Si

  9. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

    NARCIS (Netherlands)

    Nguyen, Ai T.; Baggerman, Jacob; Paulusse, Jos M.J.; Rijn, van Cees J.M.; Zuilhof, Han

    2011-01-01

    Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable Si−C

  10. Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures

    Science.gov (United States)

    Jackson, Helen C.

    Silicon nitride passivation on AlGaNGaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaNGaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 MeV electron irradiation at fluences of 1016 cm-2. Hall system measurements are used to observe changes in mobility, carrier concentration and conductivity as a function of Si3N4 thickness. Models are developed that relate the device structure and passivation layer under 1 MeV radiation to the observed changes to the measured photoluminescence and deep level transient spectroscopy. A software model is developed to determine the production rate of defects from primary 1 MeV electrons that can be used for other energies and materials. The presence of either a 50 or 120 nm Si 3N4 passivation layer preserves the channel current for both and appears to be optimal for radiation hardness.

  11. Silicon Nitride Bioceramics Induce Chemically Driven Lysis in Porphyromonas gingivalis.

    Science.gov (United States)

    Pezzotti, Giuseppe; Bock, Ryan M; McEntire, Bryan J; Jones, Erin; Boffelli, Marco; Zhu, Wenliang; Baggio, Greta; Boschetto, Francesco; Puppulin, Leonardo; Adachi, Tetsuya; Yamamoto, Toshiro; Kanamura, Narisato; Marunaka, Yoshinori; Bal, B Sonny

    2016-03-29

    Organisms of Gram-negative phylum bacteroidetes, Porphyromonas gingivalis, underwent lysis on polished surfaces of silicon nitride (Si3N4) bioceramics. The antibacterial activity of Si3N4 was mainly the result of chemically driven principles. The lytic activity, although not osmotic in nature, was related to the peculiar pH-dependent surface chemistry of Si3N4. A buffering effect via the formation of ammonium ions (NH4(+)) (and their modifications) was experimentally observed by pH microscopy. Lysis was confirmed by conventional fluorescence spectroscopy, and the bacteria's metabolism was traced with the aid of in situ Raman microprobe spectroscopy. This latter technique revealed the formation of peroxynitrite within the bacterium itself. Degradation of the bacteria's nucleic acid, drastic reduction in phenilalanine, and reduction of lipid concentration were observed due to short-term exposure (6 days) to Si3N4. Altering the surface chemistry of Si3N4 by either chemical etching or thermal oxidation influenced peroxynitrite formation and affected bacteria metabolism in different ways. Exploiting the peculiar surface chemistry of Si3N4 bioceramics could be helpful in counteracting Porphyromonas gingivalis in an alkaline pH environment.

  12. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy

    Science.gov (United States)

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M.; McEntire, Bryan; Bal, Sonny B.

    2017-01-01

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant’s surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases. PMID:28327664

  13. Fabrication and properties of graphene reinforced silicon nitride composite materials

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yaping; Li, Bin, E-mail: libin@nudt.edu.cn; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-09-17

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si{sub 3}N{sub 4} ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si{sub 3}N{sub 4} ceramic matrix. β-Si{sub 3}N{sub 4,} O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si{sub 3}N{sub 4}, Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods.

  14. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Weeks, Stephen, E-mail: Stephen.Weeks@intermolecular.com; Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl [Intermolecular, 3011 North 1st Street, San Jose, California 95134 (United States)

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  15. Ion beam assisted deposition of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Hubler, G. K.; Donovan, E. P.; Gossett, C. R.

    1994-06-01

    Hydrogenated silicon nitride films were produced near room temperature by electron beam evaporation of Si and simultaneous bombardment with a 500 eV ammonia ion beam from a Kaufman ion source and for a variety of ratios of incident charge to evaporant fluxes. The composition of N, Si and H in the films as a function of ion current density was measured by means of Rutherford backscattering and elastic recoil detection analyses. Reflection and transmission spectroscopy in the wavelength range 400 nm to 3125 nm were employed to measure optical thickness and refractive index. From the data we extracted the number of nitrogen atoms in the ammonia beam per unit charge collected, the sputtering coefficient for ammonia incident on Si, and the refractive index versus composition of the alloys. At the highest N composition, the films were clear in the visible with the UV cut-off less than 400 nm, the index was 1.80 which is lower than that of pure Si3N4 and the H content was as high as 27 at.%.

  16. Ag doped silicon nitride nanocomposites for embedded plasmonics

    Energy Technology Data Exchange (ETDEWEB)

    Bayle, M.; Bonafos, C., E-mail: bonafos@cemes.fr; Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, Cedex 04 (France); Khomenkova, L.; Gourbilleau, F. [CIMAP, CNRS/CEA/ENSICAEN/UCBN, 6 Boulevard Maréchal Juin, 14050 Caen, Cedex 4 (France)

    2015-09-07

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  17. Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, A.D. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai, Maharashtra 400098 (India)], E-mail: adyadav@physics.mu.ac.in; Patel, A.P.; Dubey, S.K. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai, Maharashtra 400098 (India); Panigrahi, B.K.; Kesavamoorthy, R.; Nair, K.G.M. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu 603102 (India)

    2008-04-15

    The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen ({sup 14}N{sup +}) ions at fluence of 1.0 x 10{sup 17}, 2.5 x 10{sup 17} and 5.0 x 10{sup 17} cm{sup -2} into <1 1 1> single crystal silicon substrates held at elevated temperature (410 deg. C). The structures of ion-beam synthesized buried silicon nitride layers were studied by X-ray diffraction (XRD) technique. The XRD studies reveal the formation of hexagonal silicon nitride (Si{sub 3}N{sub 4}) structure at all fluences. The concentration of the silicon nitride phase was found to be dependent on the ion fluence. The intensity and full width at half maximum (FWHM) of XRD peak were found to increase with increase in ion fluence. The Raman spectra for samples implanted with different ion fluences show crystalline silicon (c-Si) substrate peak at wavenumber 520 cm{sup -1}. The intensity of the silicon peak was found to decrease with increase in ion fluence.

  18. Synthetic Routes to Oligo- and Polysilazanes. Polysilazane Precursors to Silicon Nitride.

    Science.gov (United States)

    1987-01-01

    Organometallic Polym. ,7COSAri CODES 18, SUBJE KERMS (Continue on reverse if necessary and identify by block number) ::LD GROUP SUB-GROUP Polysilazanes; preceramic...polymers; S0Pfliond activat I \\ catalysis; 5W4 ; silanes, ammonia ; amines s P/11’ei C? "STRACT (Continue on reverse if necessary and identify by...silicon nitride mixed with silicon. Silicon is found even when pyrolysis Is conducted under an ammonia atmosphere. The tentatively proposed oligomer

  19. Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

    2001-01-01

    A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

  20. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found....... This relation suggest that the refractive index of oxy-nitride with a low nitrogen concentration is determined by the material density. It is suggested that the relative oxygen concentration in the gas flow is the major deposition characterization parameter, and that water vapor is the predominant reaction by...

  1. Elastocapillary folding of three dimensional micro-structures using water pumped through the wafer via a silicon nitride tube

    NARCIS (Netherlands)

    Legrain, A.; Berenschot, J.W.; Sanders, R.G.P.; Ma, K.; Tas, N.R.; Abelmann, L.

    2011-01-01

    In this paper we present the first investigation of a batch method for folding of threedimensional micrometer-sized silicon nitride structures by capillary forces. Silicon nitride tubes have been designed and fabricated using DRIE at the center of the planar origami patterns of the structures. Water

  2. Hafnium nitride buffer layers for growth of GaN on silicon

    Science.gov (United States)

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  3. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    Science.gov (United States)

    Bagolini, Alvise; Savoia, Alessandro Stuart; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Lamberti, Nicola; Caliano, Giosuè

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min-1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm-1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride.

  4. Ultrananocrystalline Diamond-Coated Microporous Silicon Nitride Membranes for Medical Implant Applications

    Science.gov (United States)

    Skoog, Shelby A.; Sumant, Anirudha V.; Monteiro-Riviere, Nancy A.; Narayan, Roger J.

    2012-04-01

    Ultrananocrystalline diamond (UNCD) exhibits excellent biological and mechanical properties, which make it an appropriate choice for promoting epidermal cell migration on the surfaces of percutaneous implants. We deposited a ~150 nm thick UNCD film on a microporous silicon nitride membrane using microwave plasma chemical vapor deposition. Scanning electron microscopy and Raman spectroscopy were used to examine the pore structure and chemical bonding of this material, respectively. Growth of human epidermal keratinocytes on UNCD-coated microporous silicon nitride membranes and uncoated microporous silicon nitride membranes was compared using the 3-(4,5-dimethylthiazol-2-yl)2,5-diphenyltetrazolium bromide (MTT) assay. The results show that the UNCD coating did not significantly alter the viability of human epidermal keratinocytes, indicating potential use of this material for improving skin sealing around percutaneous implants.

  5. Tensile test of pressureless-sintered silicon nitride at elevated temperature

    Science.gov (United States)

    Matsusue, K.; Fujisawa, Y.; Takahara, K.

    1985-01-01

    Uniaxial tensile strength tests of pressureless sintered silicon nitride were carried out in air at temperatures ranging from room temperature up to 1600 C. Silicon nitrides containing Y2O3, Al2O3, Al2O3-MgO, or MgO-CeO2 additives were tested. The results show that the composition of the additive used influences the strength characteristics of the silicon nitride. The tensile strength rapidly decreased at temperatures above 1000 C for the materials containing MgO as the additive and above 1000 C for the material with Y2O3. When the temperature increased to as high as 1300 C, the strength decreased to about 10 percent of the room temperature strength in each case. Observations of the fracture origin and of the crack propagation on the fracture surfaces are discussed.

  6. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  7. Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities

    CERN Document Server

    Puckett, Matthew W; Lin, Hung-Hsi; Yang, Muhan; Vallini, Felipe; Fainman, Yeshaiahu

    2016-01-01

    We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely X(2)yyy and X(2)xxy. Additionally, we show how the generated second-harmonic signal may be actively tuned through the application of bias voltages across silicon nitride. The nonlinear material properties measured here are anticipated to allow for the practical realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

  8. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    Science.gov (United States)

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  9. Critical flaw size in silicon nitride ball bearings

    Science.gov (United States)

    Levesque, George Arthur

    Aircraft engine and bearing manufacturers have been aggressively pursuing advanced materials technology systems solutions to meet main shaft-bearing needs of advanced military aircraft engines. Ceramic silicon nitride hybrid bearings are being developed for such high performance applications. Though silicon nitride exhibits many favorable properties such as high compressive strength, high hardness, a third of the density of steel, low coefficient of thermal expansion, and high corrosion and temperature resistance, they also have low fracture toughness and are susceptible to failure from fatigue spalls emanating from pre-existing surface flaws that can grow under rolling contact fatigue (RCF). Rolling elements and raceways are among the most demanding components in aircraft engines due to a combination of high cyclic contact stresses, long expected component lifetimes, corrosive environment, and the high consequence of fatigue failure. The cost of these rolling elements increases exponentially with the decrease in allowable flaw size for service applications. Hence the range of 3D non-planar surface flaw geometries subject to RCF is simulated to determine the critical flaw size (CFS) or the largest allowable flaw that does not grow under service conditions. This dissertation is a numerical and experimental investigation of surface flaws in ceramic balls subjected to RCF and has resulted in the following analyses: Crack Shape Determination: the nucleation of surface flaws from ball impact that occurs during the manufacturing process is simulated. By examining the subsurface Hertzian stresses between contacting spheres, their applicability to predicting and characterizing crack size and shape is established. It is demonstrated that a wide range of cone and partial cone cracks, observed in practice, can be generated using the proposed approaches. RCF Simulation: the procedure and concerns in modeling nonplanar 3D cracks subject to RCF using FEA for stress intensity

  10. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    Science.gov (United States)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y. X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N2 mixture. The effects of N2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24° to 49.6°. To some extent, the silicon nitride films deposited are hydrophilic in nature.

  11. Antifuse with a single silicon-rich silicon nitride insulating layer

    Energy Technology Data Exchange (ETDEWEB)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  12. Si quantum dots in silicon nitride: Quantum confinement and defects

    Science.gov (United States)

    Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.

    2015-12-01

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from ˜2.3 eV to ˜1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (˜Si3N3.15) in which the maximum of light emission is observed.

  13. Si quantum dots in silicon nitride: Quantum confinement and defects

    Energy Technology Data Exchange (ETDEWEB)

    Goncharova, L. V., E-mail: lgonchar@uwo.ca; Karner, V. L.; D' Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J. [Department of Physics and Astronomy, The University of Western Ontario, London, Ontario N6A 3K7 (Canada); Nguyen, P. H. [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada)

    2015-12-14

    Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.

  14. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    Energy Technology Data Exchange (ETDEWEB)

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  15. Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide

    CERN Document Server

    Liu, Xing; Zhou, Binbin; Krückel, Clemens J; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

    2016-01-01

    We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

  16. Identification of nitriding mechanisms in high purity reaction bonded silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Haggerty, J.S.

    1993-03-01

    The rapid, low-temperature nitriding results from surface effects on the Si particles beginning with loss of chemisorbed H and sequential formation of thin amorphous Si nitride layers. Rapid complete conversion to Si[sub 3]N[sub 4] during the fast reaction can be inhibited when either too few or too many nuclei form on Si particels. Optimally, [approximately] 10 Si[sub 3]N[sub 4] nuclei form per Si particles under rapid, complete nitridation conditions. Nitridation during the slow reaction period appears to progress by both continued reaction of nonpreferred Si[sub 3]N[sub 4] growth interfaces and direct nitridation of the remaining Si/vapor interfaces.

  17. Identification of nitriding mechanisms in high purity reaction bonded silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Haggerty, J.S.

    1993-03-01

    The rapid, low-temperature nitriding results from surface effects on the Si particles beginning with loss of chemisorbed H and sequential formation of thin amorphous Si nitride layers. Rapid complete conversion to Si{sub 3}N{sub 4} during the fast reaction can be inhibited when either too few or too many nuclei form on Si particels. Optimally, {approximately} 10 Si{sub 3}N{sub 4} nuclei form per Si particles under rapid, complete nitridation conditions. Nitridation during the slow reaction period appears to progress by both continued reaction of nonpreferred Si{sub 3}N{sub 4} growth interfaces and direct nitridation of the remaining Si/vapor interfaces.

  18. First principle study of structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon

    Science.gov (United States)

    Bahadur, Amar; Verma, Mohan L.; Mishra, Madhukar

    2015-04-01

    Using first principle calculation, we investigate the structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon (ZBNNR). Our results show that the shift in position of silicon doping with respect to the ribbon edge causes change in the structural geometry, electronic structure and magnetization of ZBNNR. The band gap of silicon doped ZBNNR is found to become narrower as compared to that of perfect ZBNNR. We find that band gap and magnetic moment of ZBNNR can be tuned by substitutional silicon doping position and doping concentration.

  19. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  20. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  1. Dislocation Emission at the Silicon/Silicon Nitride Interface: A Million Atom Molecular Dynamics Simulation on Parallel Computers

    Science.gov (United States)

    Bachlechner, Martina E.; Omeltchenko, Andrey; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar; Madhukar, Anupam

    2000-01-01

    Mechanical behavior of the Si\\(111\\)/Si3N4\\(0001\\) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the \\(1¯ 1¯1\\) plane of the silicon substrate with a speed of 500 \\(+/-100\\) m/s. Time evolution of the dislocation emission and nature of defects is studied.

  2. Dislocation Emission at the Silicon/Silicon Nitride Interface: A Million Atom Molecular Dynamics Simulation on Parallel Computers

    Energy Technology Data Exchange (ETDEWEB)

    Bachlechner, Martina E.; Omeltchenko, Andrey; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjoe, Ingvar; Madhukar, Anupam

    2000-01-10

    Mechanical behavior of the Si(111)/Si{sub 3}N{sub 4} (0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the (1 11) plane of the silicon substrate with a speed of 500 ({+-}100) m/s . Time evolution of the dislocation emission and nature of defects is studied. (c) 2000 The American Physical Society.

  3. Synthesis of silicon carbide-silicon nitride composite ultrafine particles using a carbon dioxide laser

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Masaaki; Maniette, Yves; Nakata, Yoshinori; Okutani, Takeshi (Government Industrial Development Lab., Hokkaido, Sapporo (Japan))

    1993-05-01

    The synthesis and the structure of silicon carbide-silicon nitride (SiC-Si[sub 3]N[sub 4]) composite ultrafine particles have been studied. SiC-Si[sub 3]N[sub 4] composite ultrafine particles were prepared by irradiating a SiH[sub 4], C[sub 2]H[sub 4], and NH[sub 3] gas mixture with a CO[sub 2] laser at atmospheric pressure. The composition of composite powders changed with the reactant gas flow rate. The carbon and nitrogen content of the powder could be controlled in a wide range from 0 to 30 wt%. The composite powder, which contained 25.3 wt% carbon and 5.8 wt% nitrogen, had a [beta]-SiC structure. As the nitrogen content increased, SiC decreased and amorphous phase, Si[sub 3]N[sub 4], Si appeared. The results of XPS and lattice constant measurements suggested that Si, C, and N atoms were intimately mixed in the composite particles.

  4. TOPICAL REVIEW Textured silicon nitride: processing and anisotropic properties

    Directory of Open Access Journals (Sweden)

    Xinwen Zhu and Yoshio Sakka

    2008-01-01

    Full Text Available Textured silicon nitride (Si3N4 has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW and templated grain growth (TGG. The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3 N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured

  5. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  6. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    Assche, F.J.H. Van; Unnikrishnan, S.; Michels, J.J.; Mol, A.M.B. van; Weijer, P. van de; Sanden, M.C.M. van de; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells

  7. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  8. Two-octave spanning supercontinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths

    NARCIS (Netherlands)

    Garcia Porcel, M.A.; Schepers, F.; Epping, J.P.; Hellwig, T.; Hoekman, M.; Heideman, R.G.; Slot, van der P.J.M.; Lee, C.J.; Schmidt, R.; Bratschitsch, R.; Fallnich, C.; Boller, K-J.

    2017-01-01

    We demonstrate supercontinuum generation in stoichiometric silicon nitride (Si3N4 in SiO2) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal

  9. Two-octave spanning supercontiinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths

    NARCIS (Netherlands)

    Porcel, M.A.; Schepers, Florian; Epping, J.P.; Hellwig, T.; Hoekman, M.; Heideman, R.G.; Slot, van der P.J.M.; Lee, C.J.; Schmidt, A.R.; Bratschitsch, R.; Fallnich, C.; Boller, K-J.

    2016-01-01

    We demonstrate supercontinuum generation in stoichiometric silicon nitride (Si3N4 in SiO2) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal

  10. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  11. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    Energy Technology Data Exchange (ETDEWEB)

    Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  12. Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

    NARCIS (Netherlands)

    Isai, Gratiela I.; Holleman, Jisk; Wallinga, Hans; Woerlee, Pierre H.

    2004-01-01

    Silicon nitride layers with very low hydrogen content (less than 1 atomic percent) were deposited at near room temperature, from N2 and SiH4, with a multipolar electron cyclotron resonance plasma. The influences of pressure and nitrogen flow rate on physical and electrical properties were studied in

  13. Experimental and theoretical evaluation of the laser-assisted machining of silicon nitride

    Science.gov (United States)

    Rozzi, Jay Christopher

    This study focused on the experimental and theoretical evaluation of the laser assisted machining (LAM) of silicon nitride ceramics. A laser assisted machining facility was constructed whose main components consist of a COsb2 laser and a CNC lathe. Surface temperature histories were first measured and compared to a transient, three-dimensional numerical simulation for a rotating silicon nitride workpiece heated by a translating laser for ranges of the workpiece rotational and laser-translation speeds, as well as the laser beam diameter and power. Excellent agreement was obtained between the experimental and predicted temperature histories. Laser assisted machining experiments on silicon nitride ceramic workpieces were completed for a wide range of operating conditions. Data for cutting forces and surface temperature histories illustrated that the lower bound for the avoidance of cutting tool and/or workpiece fracture for LAM is defined by the YSiAlON glass transition temperature (920-970sp°C). As temperatures near the cutting tool increase to values above the glass transition temperature range, the glassy phase softened, facilitating plastic deformation and, correspondingly, the production of semi-continuous or continuous chips. The silicon nitride machined workpiece surface roughness (Rsb{a}=0.39\\ mum) for LAM at the nominal operating condition was nearly equivalent to a value associated with the grinding of silicon nitride using a diamond wheel (Rsb{a}=0.2\\ mum). By examining the machined surfaces and chips, it was shown that LAM does not produce detectable sub-surface cracking or significant silicon nitride microstructure alteration, respectively. A transient, three-dimensional numerical heat transfer model of laser assisted machining was constructed, which includes a preheat phase and material removal, with the associated changes in the workplace geometry. Excellent agreement was obtained between the measured and predicted temperature histories. The strong

  14. Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence

    Energy Technology Data Exchange (ETDEWEB)

    Heinrich, Gerrit, E-mail: gheinrich@cismst.de [CIS Forschungsinstititut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, Erfurt 99099 (Germany); Technische Universität Ilmenau, Institut für Physik, Weimarer Str. 32, Ilmenau 98693 (Germany); Wollgarten, Markus [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Bereich Solarenergieforschung, Institut für Technologie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Bähr, Mario; Lawerenz, Alexander [CIS Forschungsinstititut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, Erfurt 99099 (Germany)

    2013-08-01

    In this work, silicon nitride (SiN{sub x}) layers, deposited on a planar silicon wafer are locally irradiated by ultra short laser pulses with fluences near the threshold fluence. The irradiated areas are investigated by SEM and TEM in order to analyze the laser influence to silicon and to the SiN{sub x} layer. Thereby, a lift-off process is observed for this SiN{sub x} layer. The silicon absorbs the laser pulse energy. For low fluences, crystalline silicon is disordered below the SiN{sub x} layer. For high fluences, silicon evaporates below the SiN{sub x} layer and bulge the SiN{sub x} layer. If the pressure within the bulge is high enough, the SiN{sub x} layer will break down due to high mechanical stress.

  15. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Erwin; Sarajlic, Edin; Tas, Niels; Jansen, Henri

    2014-01-01

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using (111) silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom surface enclosed by th

  16. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  17. Geometrical Deviation and Residual Strain in Novel Silicon-on-Aluminium-Nitride Bonded Wafers

    Institute of Scientific and Technical Information of China (English)

    门传玲; 徐政; 吴雁军; 安正华; 谢欣云; 林成鲁

    2002-01-01

    Aluminium nitride (AlN), with much higher thermal conductivity, is considered to be an excellent alternative to the SiO2 layer in traditional silicon-on-insulator (SOI) materials. The silicon-on-aluminium-nitride (SOAN) structure was fabricated by the smart-cut process to alleviate the self-heating effects for traditional SOI. The convergent beam Kikuchi line diffraction pattern results show that some rotational misalignment exists when two wafers are bonded, which is about 3°. The high-resolution x-ray diffraction result indicates that, before annealing at high temperature, the residual lattice strain in the top silicon layer is tensile. After annealing at 1100° C for an hour, the strain in the top Si decreases greatly and reverses from tensile to slightly compressive as a result of viscous flow of AlN.

  18. Crystallization behavior of three-dimensional silica fiber reinforced silicon nitride composite

    Science.gov (United States)

    Qi, Gongjin; Zhang, Changrui; Hu, Haifeng; Cao, Feng; Wang, Siqing; Jiang, Yonggang; Li, Bin

    2005-10-01

    The crystallization behavior of a new type of ceramic matrix composites, three-dimensional silica fiber reinforced silicon nitride matrix composite prepared by perhydropolysilazane infiltration and pyrolysis, was investigated by X-ray diffractometry and Fourier transform infrared spectroscopy. With the post-annealing treatment of the amorphous as-received composite at elevated tempertures of 1400 and 1600 °C in nitrogen atmosphere, there was remarkable suppression of the crystallization of polymer-derived silicon nitride ceramic matrix into α-Si 3N 4 and silica fibers into α-cristobalite, which was probably attributed to the phase of silicon oxynitrides originating from the strong fiber/matrix interfacial chemical reaction.

  19. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez, J. M., E-mail: jmramirez@el.ub.edu; Berencén, Y.; Garrido, B. [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Cueff, S. [Institut des Nanotechnologies de Lyon, École Centrale de Lyon, Écully 69134 (France); Labbé, C. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  20. Grain refining of aluminium alloys and silicon by means of boron-nitride particles

    Energy Technology Data Exchange (ETDEWEB)

    Wulf, Eric; Seitz, Jan-Marten; Schaper, Mirko; Bach, Friedrich-Wilhelm [Leibniz Univ. of Hannover, Garbsen (Germany). Inst. of Materials Science; Alphei, Lukas David; Westphal, David; Becker, Joerg August; Feldhoff, Armin [Leibniz Univ. of Hannover, Garbsen (Germany). Inst. of Physical Chemistry and Electrochemistry

    2013-03-15

    Investigations were carried out to grain refine the aluminium alloys Al-6Si (all compositions given in wt.%) and Al-12Si as well as pure silicon by means of inoculation using boron nitride nano-particles. Comparative tests were performed using both conventional grain refiners based on titanium as well as without inoculants. Analyses were performed using scanning electron microscopy, tensile testing, thermographic and metallographic techniques. In doing this, a significant effect on grain refining is verified by inoculating using boron nitride which exceeds the effect of conventional grain refiners. (orig.)

  1. Chemical bulk properties of multicrystalline silicon ingots for solar cells cast in silicon nitride crucibles

    Science.gov (United States)

    Modanese, C.; Di Sabatino, M.; Syvertsen, M.; Arnberg, L.

    2012-09-01

    Silicon nitride is an alternative material to the widely used silica crucibles for directional solidification of mc-Si ingots, its main advantages being the reusability in successive castings and elimination for a source for oxygen contamination of the ingot. In this work, several ingots were cast in these crucibles and compared to reference ingots cast in silica crucibles. The thermal properties of the Si3N4 crucible differ from those of the SiO2 crucible and lead to a different thermal history during melting and casting. The oxygen contamination of the ingot was observed to depend mainly on the melting and holding temperature, rather than on the crucible material. The lowest oxygen concentration was observed in the ingots with the lowest melting temperature. However, the thermal properties of the Si3N4 crucible influence the oxygen profile along ingot height, with a faster decrease in the concentration with increasing ingot height. This is believed to be due to a different mechanism for oxygen transport compared to that of the silica crucibles. The concentration of dopants in the ingots showed that contamination from the Si3N4 crucible occurred, probably due to diffusion of B- and P-oxides into the Si melt.

  2. Subtask 6.6 - SiAION Coatings for Alkali-Resistant Silicon Nitride. Topical report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-02-25

    The efficiency of a gas turbine can be improved by increasing operating temperature. Construction materials should both meet high strength requirements and exhibit hot alkali corrosion resistance. Structural ceramics based on silicon nitride are promising candidates for high temperature engineering applications because of their high strength and good resistance to corrosion. Their performance varies significantly with the mechanical properties of boundary phases which, in turn, depend on their chemical composition, thickness of the amorphous phase, and the deformation process. To make silicon nitride ceramics tough, SiAlON ceramics were developed with controlled crystallization of the amorphous grain boundary phase. Crystallization of the grain boundary glass improves the high temperature mechanical properties of silicon nitride ceramics. Thus, the knowledge of silicon oxynitride ceramics corrosion behavior in Na{sub 2}SO{sub 4} becomes important for engineers in designing appropriate part for turbines working at high temperatures. So far there has been no report concerning alkali attack on SiAlON ceramics in the presence of SO{sub 2} and chlorine in flue gas. The goal of this project was to investigate alkali corrosion of SiAlON-Y structural ceramics under combustion conditions in the presence of sodium derived components.

  3. Effect of helium ion beam treatment on the etching rate of silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Petrov, Yu.V., E-mail: y.petrov@spbu.ru; Sharov, T.V.; Baraban, A.P.; Vyvenko, O.F.

    2015-04-15

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. 30 keV helium ions were implanted into a 500-nm-thick silicon nitride film on silicon. Ion fluences from 10{sup 15} to 10{sup 17} cm{sup −2} were used. Etching was performed in a hydrofluoric acid solution. All samples were investigated with a scanning electron microscope and atomic force microscope. It was found that helium ion implantation can increase the etching rate by a factor of three. This results in the formation of a well in the implanted area after etching. The maximum depth of the well is about 180 nm and is limited by the penetration depth of 30 keV helium ions. Two possible reasons for enhanced etching are suggested: enhancement by ion-induced defects and electrostatic interaction of ions of the etchant with ion-induced space charge of silicon nitride. The recombination of ion-induced defects is also discussed.

  4. CMOS-compatible silicon nitride spectrometers for lab-on-a-chip spectral sensing

    Science.gov (United States)

    Ryckeboer, Eva; Nie, Xiaomin; Subramanian, Ananth Z.; Martens, Daan; Bienstman, Peter; Clemmen, Stephane; Severi, Simone; Jansen, Roelof; Roelkens, Gunther; Baets, Roel

    2016-05-01

    We report on miniaturized optical spectrometers integrated on a photonic integrated circuit (PIC) platform based on silicon nitride waveguides and fabricated in a CMOS-compatible approach. As compared to a silicon- on-insulator PIC-platform, the usage of silicon nitride allows for operation in the visible and near infrared. Furthermore, the moderately high refractive index contrast in silicon-nitride photonic wire waveguides provides a valuable compromise between compactness, optical loss and sensitivity to phase error. Three generic types of on-chip spectrometers are discussed: the arrayed waveguide grating (AWG) spectrometer, the echelle grating or planar concave grating (PCG) spectrometer and the stationary Fourier transform spectrometer (FTS) spectrometer. Both the design as well as experimental results are presented and discussed. For the FTS spectrometer a specific design is described in detail leading to an ultra-small (0.1 mm2) footprint device with a resolution of 1 nm and a spectral range of 100nm. Examples are given of the usage of these spectrometers in refractive index biosensing, absorption spectroscopy and Raman spectroscopy.

  5. Structure of silicon/oxide and nitride/oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, Vladimir A [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2009-09-30

    We systematize and generalize modern concepts on the atomic structure of silicon/insulator (Si/SiO{sub 2}, Si/SiO{sub x}N{sub y}) and insulator/insulator (Si{sub 3}N{sub 4}/SiO{sub 2}) interfaces in the structures underlying the operation of silicon devices. (reviews of topical problems)

  6. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    Science.gov (United States)

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-12-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  7. Surface toughness of silicon nitride bioceramics: I, Raman spectroscopy-assisted micromechanics.

    Science.gov (United States)

    Pezzotti, Giuseppe; Enomoto, Yuto; Zhu, Wenliang; Boffelli, Marco; Marin, Elia; McEntire, Bryan J

    2016-02-01

    Indentation micro-fracture is revisited as a tool for evaluating the surface toughness of silicon nitride (Si3N4) bioceramics for artificial joint applications. Despite being unique and practical from an experimental perspective, a quantitative assessment of surface fracture toughness using this method is challenging. An improved method has been developed, consisting of coupling indentation with confocal (spatially resolved) Raman piezo-spectroscopy. Empowered by the Raman microprobe, the indentation micro-fracture method was found to be capable of providing reliable surface toughness measurements in silicon nitride biomaterials. In designing the microstructures of bioceramic bearing couples for improved tribological performance, surface toughness must be considered as a fundamentally different and distinct parameter from bulk toughness. The coupling of indention crack opening displacements (COD) with local stress field assessments by spectroscopy paves the way to reliably compare the structural properties of bioceramics and to quantitatively monitor their evolution during environmental exposure.

  8. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  9. An evaluation of bearings operating in a cryogenic environment with silicon nitride rolling elements

    Science.gov (United States)

    Gibson, H. G.

    1991-01-01

    The bearings used in the space shuttle main engine (SSME) high pressure oxidizer turbopump (HPOTP) do not meet the expected life goals that were set for them. In an effort to improve their performance, many solutions are being studied. New bearing materials are being developed, better manufacturing techniques are being investigated, and improved cage materials for better lubrication are being tested. The focus is on the replacement of steel balls with ones made of silicon nitride in 57-mm HPOTP bearings. The bearings were then installed in a test rig and run at near turbopump operating conditions. The results from this test series are encouraging, with silicon nitride showing good wear resistance and thermal stability.

  10. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Science.gov (United States)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  11. Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer (Review Paper

    Directory of Open Access Journals (Sweden)

    T. Som

    2009-07-01

    Full Text Available Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top- and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200OC for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes.Defence Science Journal, 2009, 59(4, pp.351-355, DOI:http://dx.doi.org/10.14429/dsj.59.1533

  12. Application of Silicon Nitride (Si3N4 Ceramics in Ball Bearing

    Directory of Open Access Journals (Sweden)

    Wijianto Wijianto

    2016-08-01

    operation up to 1000°C, greater thermal shock resistance, lower density and low thermal expansion. This properties gives some benefit for ball bearing material such as higher running speed, reduce vibration of the shaft, will improve the life time and maintenance cost, lower heat generated, less energy consumption, lower wear rate, reducing noise level and reduce of using lubricant. The sintering methods are used to produce ball bearing from silicon nitride. Some techniques can be applied to increase ceramics strength which are reduce porosity, reduce grain size, reduce surface flaw and proof stressing. The surface finishing of the ceramic bearing is very important because silicon nitride as a brittle material, its strength is limited to the flaw sizes especially the flaw at the surface.

  13. THERMODYNAMIC ANALYSIS AND EXPERIMENTAL VERIFICATION FOR SYNTHESIZING SILICON NITRIDE NANOPARTICLES USING RF PLASMA CVD

    Institute of Scientific and Technical Information of China (English)

    Ruoyu Hong; Jianmin Ding; Hongzhong Li

    2003-01-01

    Silicon nitride nanoparticles were synthesized by radio-frequency (RF) plasma chemical vapor deposition (PCVD) using silicon tetrachloride and ammonia as precursors, and argon as carrier gas. By assuming chemical thermodynamic equilibrium in the system, a computer program based on chemical thermodynamics was used to calculate the compositions of the system at different initial concentrations and final temperatures. At first, five elements and thirty-four species were considered. The effects of temperatures, and concentrations of ammonia, hydrogen and nitrogen on the equilibrium compositions were analyzed. It was found that the optimal reaction temperature range should be 1200 to 1500 K to obtain the highest conversion and yield of Si3N4. The inlet position of ammonia should be lower than that of silicon tetrachloride, and both should be located at the tail of the plasma torch. The best mole ratio of ammonia to silicon tetrachloride was found to be about 6. Later, the influences of water (and oxygen) were considered, and 17 additional species were included in the computations. It was found that oxygen or water content in the raw materials should be as low as possible in order to have high nitride content in the produced Si3N4. Nitrogen or hydrogen might be used to replace some or even all the argon to improve the yield of silicon nitride and reduce the cost. The ratio of ammonia to silicon tetrachloride should be high enough to obtain high conversion, but not excessively high to reduce the oxygen content due to the existence of water in ammonia. The simulated results were verified by experiments.

  14. Correlated photon pair generation in low-loss double-stripe silicon nitride waveguides

    CERN Document Server

    Zhang, Xiang; Xiong, Chunle; Eggleton, Benjamin J

    2016-01-01

    We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.

  15. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  16. Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

    Science.gov (United States)

    Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

    2015-05-01

    We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

  17. Fracture of flash oxidized, yttria-doped sintered reaction-bonded silicon nitride

    Science.gov (United States)

    Govila, R. K.

    1987-01-01

    The oxidation behavior of a slip cast, yttria-doped, sintered reaction-bonded silicon nitride after 'flash oxidation' was investigated. It was found that both the static oxidation resistance and flexural stress rupture life (creep deformation) were improved at 1000 C in air compared to those of the same material without flash oxidation. Stress rupture data at high temperatures (1000 to 1200 C) are presented to indicate applied stress levels for oxidation-dependent and independent failures.

  18. Dispersion engineered high-Q silicon Nitride Ring-Resonators via Atomic Layer Deposition

    CERN Document Server

    Riemensberger, Johann; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-01-01

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. All results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  19. Robust Environmental Barrier Coatings for Silicon Nitride Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon based ceramics are the leading candidates for the high temperature structural components of the advanced propulsion engines. For such applications, one key...

  20. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  1. Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

    Science.gov (United States)

    Kim, Chan-Soo; Youn, Woong-Kyu; Lee, Dong-Kwon; Seol, Kwang-Soo; Hwang, Nong-Moon

    2009-07-01

    The nanocrystalline alpha silicon nitride (α-Si 3N 4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH 4 and NH 3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si 3N 4 nanoparticles increased, but the deposition rate decreased.

  2. Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, David, E-mail: caballero@unistra.fr [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); University of Barcelona, Department of Electronics, C/ Marti i Franques 1, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain); Martinez, Elena [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain); Bausells, Joan [Centre Nacional de Microelectronica (CNM-IMB), CSIC, Campus UAB, 08193 Bellaterra (Spain); Errachid, Abdelhamid, E-mail: abdelhamid.errachid-el-salhi@univ-lyon1.fr [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); Universite Claude Bernard - Lyon 1, LSA - UMR 5180, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex (France); Samitier, Josep [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); University of Barcelona, Department of Electronics, C/ Marti i Franques 1, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain)

    2012-03-30

    Highlights: Black-Right-Pointing-Pointer An impedimetric label-free immunosensor was developed for the specific detection of human serum albumin proteins. Black-Right-Pointing-Pointer Anti-HSA antibodies were covalently immobilized on silicon nitride surfaces using a direct functionalization methodology. Black-Right-Pointing-Pointer Silicon nitride offers multiple advantages compared to other common materials. Black-Right-Pointing-Pointer The proposed sensor has high sensitivity and good selectivity for the detection of HSA proteins. - Abstract: In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si{sub 3}N{sub 4}) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si{sub 3}N{sub 4}-based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO{sub 2}/Si{sub 3}N{sub 4} structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10{sup -13}-10{sup -7} M were detected, showing a sensitivity of 0.128 {Omega} {mu}M{sup -1} and a limit of detection of 10{sup -14} M. The specificity of the sensor was also addressed by studying the

  3. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  4. Fabrication of silicon nitride nanoceramics—Powder preparation and sintering: A review

    Directory of Open Access Journals (Sweden)

    Toshiyuki Nishimura et al

    2007-01-01

    Full Text Available Fine-grained silicon nitride ceramics were investigated mainly for their high-strain-rate plasticity. The preparation and densification of fine silicon nitride powder were reviewed. Commercial sub-micrometer powder was used as raw powder in the "as-received" state and then used after being ground and undergoing classification operation. Chemical vapor deposition and plasma processes were used for fabricating nanopowder because a further reduction in grain size caused by grinding had limitations. More recently, nanopowder has also been obtained by high-energy milling. This process in principle is the same as conventional planetary milling. For densification, primarily hot pressing was performed, although a similar process known as spark plasma sintering (SPS has also recently been used. One of the advantages of SPS is its high heating rate. The high heating rate is advantageous because it reduces sintering time, achieving densification without grain growth. We prepared silicon nitride nanopowder by high-energy milling and then obtained nanoceramics by densifying the nanopowder by SPS.

  5. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    Science.gov (United States)

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  6. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  7. Electrochemical characteristics of ternary and quadruple lithium silicon nitrides as anode material for lithium ion batteries: the influence of precursors

    Institute of Scientific and Technical Information of China (English)

    WEN Zhongsheng; TIAN Feng; SUN Juncai; JI Shijun; XIE Jingying

    2008-01-01

    Ternary and quadruple lithium silicon nitride anode materials for lithium ion batteries with different precursors were prepared by the simple process of high-energy ball milling.High capacity and excellent cyclability were obtained.The influence of precursor introduction on the electrochemical performance of products was investigated.This research reveals that the electrochemical performance of lithium silicon hiaide can be enhanced significantly by doping O.The cyclability of quadruple lithium silicon nitride can be optimized remarkably by controlling the introduction quantity of the precursors.It is possible for the composite to be used as a capacity compensator within a wide voltage cut-off window.

  8. Feasibility of Actively Cooled Silicon Nitride Airfoil for Turbine Applications Demonstrated

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    2001-01-01

    Nickel-base superalloys currently limit gas turbine engine performance. Active cooling has extended the temperature range of service of nickel-base superalloys in current gas turbine engines, but the margin for further improvement appears modest. Therefore, significant advancements in materials technology are needed to raise turbine inlet temperatures above 2400 F to increase engine specific thrust and operating efficiency. Because of their low density and high-temperature strength and thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, the high processing costs and low impact resistance of silicon nitride ceramics have proven to be major obstacles for widespread applications. Advanced rapid prototyping technology in combination with conventional gel casting and sintering can reduce high processing costs and may offer an affordable manufacturing approach. Researchers at the NASA Glenn Research Center, in cooperation with a local university and an aerospace company, are developing actively cooled and functionally graded ceramic structures. The objective of this program is to develop cost-effective manufacturing technology and experimental and analytical capabilities for environmentally stable, aerodynamically efficient, foreign-object-damage-resistant, in situ toughened silicon nitride turbine nozzle vanes, and to test these vanes under simulated engine conditions. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without

  9. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    Science.gov (United States)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  10. Molecular transport through nanoporous silicon nitride membranes produced from self-assembling block copolymers.

    Science.gov (United States)

    Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël

    2012-09-28

    To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales.

  11. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    dioxide for passivation. As early as the 1980s, use of a Si3N4 layer on silicon operational amplifiers to achieve 4 radiation resistant...resistance of a precision operational amplifier .” IEEE Transactions on Nuclear Science, 28, no. 6 (1981): 4325-27. Fagerlind, M., Allerstain, F...172 6.3. Transconductance and Diode Measurements .......................................... 181 6.4. Deep Level Transient

  12. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  13. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).

  14. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    Science.gov (United States)

    1980-11-30

    Rowcliffe, and R. H. Lamoreaux Prepared for: Air Force Office of Scientific Research/NE Building 410 Boiling Air Force Base, D.C. 20332 Attention: Captain...samples were examined by x-ray dif- fraction. Cristobalite and a-Si 3N4 lines were found, but there was no evidence of silicon oxynitride. In most... cristobalite is the stable form.𔃾 A large amount of evi- dence indicates that this phase transiticn was not the primary reason for the increased

  15. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    Science.gov (United States)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  16. Origin of rectification in boron nitride heterojunctions to silicon.

    Science.gov (United States)

    Teii, Kungen; Hori, Takuro; Mizusako, Yusei; Matsumoto, Seiichiro

    2013-04-10

    Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries.

  17. Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples. [for Radioisotope Thermoelectric Generators

    Science.gov (United States)

    Stapfer, G.; Truscello, V. C.

    1975-01-01

    For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

  18. Investigation of a ferrite/silicon nitride composite concept aimed at automotive applications

    Energy Technology Data Exchange (ETDEWEB)

    Landeghem, Hugo Paul van; Redjaimia, Abdelkrim [Departement Sciences et Ingenierie des Materiaux et Metallurgie, Institut Jean Lamour, Ecole des Mines de Nancy, Parc de Saurupt, CS 14234, 54042 Nancy Cedex (France); Goune, Mohamed [Maizieres Automotive Products R and D, BP 30320, 57283 Maizieres-les-Metz Cedex (France); ICMCB-CNRS, 87 Avenue du Docteur Schweitzer, 33609 Pessac (France)

    2012-06-15

    This paper presents the investigation of the behavior of a Fe-1.5 wt% Si thin sheet upon plasma-assisted nitriding at 570 C. It had been confirmed that a very fine and intense precipitation of amorphous silicon nitride occurs as nitrogen diffuses into the sheet. The precipitates, the size of which is comprised between several and several tens of nanometer, display a cubic morphology in spite of their amorphous structure. These cubes adopt a particular morphology in relation to the matrix with their faces parallel to the {l_brace}100{r_brace} plane family. These precipitates cause a notable hardening of the alloy and it was possible to harden a 1 mm sheet across its whole thickness in under 8 h. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Processing Research on Chemically Vapor Deposited Silicon Nitride.

    Science.gov (United States)

    1979-12-01

    7 A-A79 328 GENERAL ELECTR IC Co PHILADELPH IA PA RE-ENTRY AND ENV--ETC F/S 3/ PROCESING RESEARCH ON CHEMICALLY VAPR DEPOSITED SILICON HITRI ETCIU) I...NH)2] x-- .Si3N 4 as well as NH 3 2) 3SiCI + 6H --- 3i + 6 HC - Si N 4 2 (V,l1) 3 4 pressure may play a part in shifting the deposition sequence from...hot-wall reactor should be further refined with em- phasis on the formation of figured geometries (hemispherical and ogive shells). As part of this

  20. Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures

    Directory of Open Access Journals (Sweden)

    Beirong Zheng

    2013-01-01

    Full Text Available Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN is deposited by the low pressure chemical vapor deposition (LPCVD process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture.

  1. Aluminum nitride-silicon carbide whisker composites: Processing, properties, and microstructural stability

    Energy Technology Data Exchange (ETDEWEB)

    Cross, M.T.

    1990-01-01

    Aluminum nitride -- silicon carbide whisker composites with up to 20 vol % whiskers were fabricated by pressureless sintering (1750{degree}--1800{degree}C) and by hot-pressing (1700{degree}--1800{degree}C). Silicon carbide whiskers were found to degrade depending on the type of protective powder bed used during sintering. Whiskers were found to degraded in high oxygen containing samples by reaction with sintering additives. Whisker degradation was also due to the formation of silicon carbide -- aluminum nitride solid solution. No whisker degradation was observed in hot-pressed samples. For these samples Young's modulus and fracture toughness were measured. A 33% increase in the fracture toughness was measured by the indentation technique for a 20 vol % whisker composite. Operative toughening mechanisms were investigated using scanning electron microscopy. Crack deflection and whisker bridging were the dominant mechanisms. It was also shown that load transfer from matrix to whiskers can be a contributing factor to toughening. 88 refs., 34 figs., 11 tabs.

  2. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  3. The development of a porous silicon nitride crossflow filter; Final report, September 1988--September 1992

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-09-01

    This report summarizes the work performed in developing a permeable form of silicon nitride for application to ceramic crossflow filters for use in advanced coal-fired electric power plants. The program was sponsored by the Department of Energy Morgantown Energy Technology Center and consisted of a design analysis and material development phase and a filter manufacture and demonstration phase. The crossflow filter design and operating requirements were defined. A filter design meeting the requirements was developed and thermal and stress analyses were performed. Material development efforts focused initially on reaction-bonded silicon nitride material. This approach was not successful, and the materials effort was refocused on the development of a permeable form of sintered silicon nitride (SSN). This effort was successful. The SSN material was used for the second phase of the program, filter manufacture and evaluation. Four half-scale SAN filter modules were fabricated. Three of the modules were qualified for filter performance tests. Tests were performed on two of the three qualified modules in the High-Temperature, High-Pressure facility at the Westinghouse Science and Technology Center. The first module failed on test when it expanded into the clamping device, causing dust leakage through the filter. The second module performed well for a cumulative 150-hr test. It displayed excellent filtration capability during the test. The blowback pulse cleaning was highly effective, and the module apparently withstood the stresses induced by the periodic pulse cleaning. Testing of the module resumed, and when the flow of combustion gas through the filter was doubled, cracks developed and the test was concluded.

  4. Graphene on silicon nitride micromembranes for optoelectromechanical devices

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Rasmussen, Andreas Næsby

    2012-01-01

    Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes......, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp(2) hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene......) and up to 13% of electric-field effect. The Hall mobility is similar to 40 cm(2)/ Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain...

  5. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  6. Sample controlled reaction temperature (SCRT): Controlling the phase composition of silicon nitride obtained by carbothermal reduction

    Energy Technology Data Exchange (ETDEWEB)

    Alcala, M.D.; Criado, J.M.; Real, C. [Instituto de Ciencia de Materiales de Sevilla, c/Americo Vespucio s/n; Isla de La Cartuja, 41092 Sevilla (Spain)

    2002-07-01

    Carbothermal reduction of silica is one of the most common methods of producing Si{sub 3}N{sub 4} powders. The experimental conditions have an important influence on the structure of the final product, especially the balance of {alpha}- to {beta}- Si{sub 3}N{sub 4}. The Sample Controlled Reaction Temperature method describes here has permitted to conclude that the phase composition of the silicon nitride is governed by the partial pressure of CO in the close vicinity of the sample. Moreover, the control of this parameter has an important influence on particle size and morphology of the final product. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  7. Control of interface fracture in silicon nitride ceramics: influence of different rare earth elements

    Energy Technology Data Exchange (ETDEWEB)

    Sun, E.Y.; Becher, P.F.; Waters, S.B.; Hsueh, Chun-Hway; Plucknett, K.P. [Oak Ridge National Lab., TN (United States); Hoffmann, M.J. [Karlsruhe Univ. (T.H.) (Germany). Inst. fuer Keramik im Maschinenbau

    1996-10-01

    The toughness of self-reinforced silicon nitride ceramics is improved by enhancing crack deflection and crack bridging mechanisms. Both mechanisms rely on the interfacial debonding process between the elongated {Beta}-Si{sub 3}N{sub 4} grains and the intergranular amorphous phases. The various sintering additives used for densification may influence the interfacial debonding process by modifying the thermal and mechanical properties of the intergranular glasses, which will result in different residual thermal expansion mismatch stresses; and the atomic bonding structure across the {Beta}-Si{sub 3}N{sub 4} glass interface. Earlier studies indicated that self-reinforced silicon nitrides sintered with different rare earth additives and/or different Y{sub 2}O{sub 3}:AI{sub 2}0{sub 3} ratios could exhibit different fracture behavior that varied from intergranular to transgranular fracture. No studies have been conducted to investigate the influence of sintering additives on the interfacial fracture in silicon nitride ceramics. Because of the complexity of the material system and the extremely small scale, it is difficult to conduct quantitative analyses on the chemistry and stress states of the intergranular glass phases and to relate the results to the bulk properties. The influence of different sintering additives on the interfacial fracture behavior is assessed using model systems in which {Beta}-Si{sub 3}N{sub 4}whiskers are embedded in SIAIRE (RE: rare-earth) oxynitride glasses. By systematically varying the glass composition, the role of various rare-earth additives on interfacial fracture has been examined. Specifically, four different additives were investigated: Al{sub 2}0{sub 3}, Y{sub 2}0{sub 3}, La{sub 2}O{sub 3}, and Yb{sub 2}O{sub 3}. In addition, applying the results from the model systems, the R- curve behavior of self-reinforced silicon nitride ceramics sintered with different Y{sub 2}0{sub 3}:AI{sub 2}0{sub 3} ratios was characterized.

  8. Electric field enhancement with plasmonic colloidal nanoantennas excited by a silicon nitride waveguide

    CERN Document Server

    Darvishzadeh-Varcheie, Mahsa; Ragan, Regina; Boyraz, Ozdal; Capolino, Filippo

    2016-01-01

    We investigate the feasibility of CMOS-compatible optical structures to develop novel integrated spectroscopy systems. We show that local field enhancement is achievable utilizing dimers of plasmonic nanospheres that can be assembled from colloidal solutions on top of a CMOS-compatible optical waveguide. The resonant dimer nanoantennas are excited by modes guided in the integrated silicon nitride waveguide. Simulations show that 100 fold electric field enhancement builds up in the dimer gap as compared to the waveguide evanescent field amplitude at the same location. We investigate how the field enhancement depends on dimer location, orientation, distance and excited waveguide modes.

  9. Observation of Transparency of Erbium-doped Silicon nitride in photonic crystal nanobeam cavities

    CERN Document Server

    Gong, Yiyang; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Negro, Luca Dal; Vuckovic, Jelena

    2010-01-01

    One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 um is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time-resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  10. Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators.

    Science.gov (United States)

    Roland, I; Zeng, Y; Checoury, X; El Kurdi, M; Sauvage, S; Brimont, C; Guillet, T; Gayral, B; Gromovyi, M; Duboz, J Y; Semond, F; de Micheli, M P; Boucaud, P

    2016-05-02

    We have developed a nanophotonic platform with microdisks using epitaxial III-nitride materials on silicon. The two-dimensional platform consists of suspended waveguides and mushroom-type microdisks as resonators side-coupled with a bus waveguide. Loaded quality factors up to 80000 have been obtained in the near-infrared spectral range for microdisk diameters between 8 and 15 μm. We analyze the dependence of the quality factors as a function of coupling efficiency. We have performed continuous-wave second harmonic generation experiments in resonance with the whispering gallery modes supported by the microdisks.

  11. Silicon-nitride photonic circuits interfaced with monolayer MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Guohua [Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States); Stanev, Teodor K. [Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States); Czaplewski, David A.; Jung, Il Woong [Center for Nanoscale Materials, Argonne National Laboratory, 9700 S Cass Avenue, Argonne, Illinois 60439 (United States); Stern, Nathaniel P., E-mail: n-stern@northwestern.edu [Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States); Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States)

    2015-08-31

    We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

  12. Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Camus, Ph. E-mail: camus@csnsm.in2p3.fr; Berge, L.; Dumoulin, L.; Marnieros, S.; Torre, J.P

    2000-04-07

    We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si{sub 3}N{sub 4}, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 {mu}m{sup 2}) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques.

  13. Dual-pumped degenerate Kerr oscillator in a silicon nitride microresonator

    CERN Document Server

    Okawachi, Yoshitomo; Luke, Kevin; Carvalho, Daniel O; Ramelow, Sven; Farsi, Alessandro; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    We demonstrate a degenerate parametric oscillator in a silicon-nitride microresonator. We use two frequency-detuned pump waves to perform parametric four-wave mixing and operate in the normal group-velocity dispersion regime to produce signal and idler fields that are frequency degenerate. Our theoretical modeling shows that this regime enables generation of bimodal phase states, analogous to the \\c{hi}(2)-based degenerate OPO. Our system offers potential for realization of CMOS-chip-based coherent optical computing and an all-optical quantum random number generator.

  14. Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Lin Men-Ku

    2009-01-01

    Full Text Available Abstract We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP ion etching. Silicon nitride SWS surfaces with diameter of 160–200 nm and a height of 140–150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR coatings and SWS and a 0.8% improvement in efficiency has been seen.

  15. Oxidation in silicon nitride. Part I - preliminary studies; Oxidacao no nitreto de silicio. Parte I: estudos preliminares

    Energy Technology Data Exchange (ETDEWEB)

    Cavalcanti, Celso Berilo Cidade; Piorino Neto, Francisco; Shibuya, Newton Hissao; Silva, Vitor Alexandre da; Silva, Oliverio Moreira Macedo; Silva, Cosme Roberto Moreira da [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil). Inst. de Aeronautica e Espaco

    1995-12-31

    Silicon nitride ceramics have excellent thermo-mechanical properties, showing high hardness, temperature strength, oxidation resistance and inertness. It can be used nearly 1.400 deg C. At 900 deg C starts a external silica layer formation, as final oxidation product. The present work is a review of some oxidation mechanisms for silicon nitride based materials, and their relationship with sintering additives. The diffusion of existing impurities occurs via intergranular glassy an/or crystalline phases, and have strong influence on the involved oxidation mechanisms. (author) 1 fig., 1 tab.

  16. Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2

    Institute of Scientific and Technical Information of China (English)

    ZHONG Zhi-qin; ZHANG Yi; YU Zhi-wei; DAI Li-ping; ZHANG Guo-jun; WANG Yu-mei; WANG Gang; WANG Shu-ya

    2009-01-01

    Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition(LF-PECVD) using silane and nitrogen as precursors. Characteristics such as deposition rate,surface morphology,and chemical composition were measured by spectroscopic ellipsometry(SE),atomic force microscope(AFM) and x-ray photoelectron spectroscopy(XPS).It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface.The XPS result indicated that a small quantity of oxygen was involved in the sample,which was discussed in this paper.

  17. Design, analysis, and characterization of stress-engineered 3D microstructures comprised of PECVD silicon oxide and nitride

    Science.gov (United States)

    Pi, Chia-Hsing; Turner, Kevin T.

    2016-06-01

    Microelectromechanical systems (MEMS) are typically 2D or quasi-3D structures fabricated using surface and bulk micromachining processes. In this work, an approach for 3D structure fabrication based on stress engineering is demonstrated. Specifically, sub-mm 3D spherical cage-like structures are realized through the deformation of bilayers of residually-stressed silicon oxide and silicon nitride with micrometer-scale thicknesses. Analytical and finite models to predict the shape of stress-engineered structures based on geometry and residual stress are described and used for structure design. A systematic experimental study was performed to quantify residual stresses in silicon nitride films made by plasma-enhanced chemical vapor deposition (PECVD). The measurements show that the residual stress of PECVD silicon nitride can be tuned over a wide range of tensile stresses through the control of deposition parameters, such as flow rate and power. Stress engineered 3D cage-like structures comprised of PECVD silicon nitride and oxide films were fabricated. 3D structures with a range of curvatures were demonstrated. The measured geometry of the fabricated structures are in good agreement with predictions from analytical and finite element models.

  18. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  19. Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

    Science.gov (United States)

    Suri, Jyothi

    Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much

  20. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

    Science.gov (United States)

    Shams, Q. A.; Brown, W. D.

    1989-10-01

    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  1. Electron transport and dielectric breakdown in silicon nitride using a charge transport model

    Science.gov (United States)

    Ogden, Sean P.; Lu, Toh-Ming; Plawsky, Joel L.

    2016-10-01

    Silicon nitride is an important material used in the electronics industry. As such, the electronic transport and reliability of these materials are important to study and understand. We report on a charge transport model to predict leakage current and failure trends based on previously published data for a stoichiometric silicon nitride dielectric. Failure occurs when the defect density increases to a critical value of approximately 6 × 1025 traps/m3. The model's parameters are determined using voltage ramp data only, and yet, the model is also able to predict constant voltage stress failure over a time scale ranging from minutes to months. The successful fit of the model to the experimental data validates our assumption that the dominant defect in the dielectric is the Si dangling bond, located approximately 2.2 eV below the conduction band. A comparison with previous SiCOH simulations shows SiN and SiCOH have similar defect-related material properties. It is also speculated that, based on the estimated parameter values of 2.75 eV for the defect formation activation energy, the materials' TDDB wear-out are caused by broken Si-H bonds, resulting in Si dangling bond defects.

  2. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Science.gov (United States)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  3. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu, E-mail: lfchen@xmu.edu.cn

    2016-09-30

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiC{sub f}/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  4. Poly(ethylene glycol) monolayer formation and stability on gold and silicon nitride substrates.

    Science.gov (United States)

    Cerruti, Marta; Fissolo, Stefano; Carraro, Carlo; Ricciardi, Carlo; Majumdar, Arun; Maboudian, Roya

    2008-10-07

    Poly(ethylene glycol) (PEG) self-assembled monolayers (SAMs) are extensively used to modify substrates to prevent nonspecific protein adsorption and to increase hydrophilicity. X-ray photoelectron spectroscopy analysis, complemented by water contact angle measurements, is employed to investigate the formation and stability upon aging and heating of PEG monolayers formed on gold and silicon nitride substrates. In particular, thiolated PEG monolayers on gold, with and without the addition of an undecylic spacer chain, and PEG monolayers formed with oxysilane precursors on silicon nitride have been probed. It is found that PEG-thiol SAMs are degraded after less than two weeks of exposure to air and when heated at temperatures as low as 120 degrees C. On the contrary, PEG-silane SAMs are stable for more than two weeks, and fewer molecules are desorbed even after two months of aging, compared to those desorbed in two weeks from the PEG-thiol SAMs. A strongly bound hydration layer is found on PEG-silane SAMs aged for two months. Heating PEG-silane SAMs to temperatures as high as 160 degrees C improves the quality of the monolayer, desorbing weakly bound contaminants. The differences in stability between PEG-thiol SAMs and PEG-silane SAMs are ascribed to the different types of bonding to the surface and to the fact that the thiol-Au bond can be easily oxidized, thus causing desorption of PEG molecules from the surface.

  5. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  6. Enhanced optical nonlinearities in CMOS-compatible ultra-silicon-rich nitride photonic crystal waveguides

    Science.gov (United States)

    Sahin, E.; Ooi, K. J. A.; Chen, G. F. R.; Ng, D. K. T.; Png, C. E.; Tan, D. T. H.

    2017-09-01

    We present the design, fabrication, and characterization of photonic crystal waveguides (PhCWs) on an ultra-silicon-rich nitride (USRN) platform, with the goal of augmenting the optical nonlinearities. The design goals are to achieve an optimized group index curve on the PhCW band edge with a non-membrane PhCW with symmetric SiO2 undercladding and overcladding, so as to maintain back-end CMOS compatibility and better structural robustness. Linear optical characterization, as well as nonlinear optical characterization of PhCWs on ultra-silicon-rich nitride is performed at the telecommunication wavelengths. USRN's negligible two-photon absorption and free carrier losses at the telecommunication wavelengths ensure that there is no scaling of two-photon related losses with the group index, thus maintaining a high nonlinear efficiency. Self-phase modulation experiments are performed using a 96.6 μm PhCW. A 1.5π phase shift is achieved with an input peak power of 2.5 W implying an effective nonlinear parameter of 1.97 × 104 (W m)-1. This nonlinear parameter represents a 49× enhancement in the nonlinear parameter from the slow light effect, in good agreement with expected scaling from the measured group index.

  7. A strategy to create spin-split metallic bands on silicon using a dense alloy layer.

    Science.gov (United States)

    Gruznev, Dimitry V; Bondarenko, Leonid V; Matetskiy, Andrey V; Yakovlev, Alexey A; Tupchaya, Alexandra Y; Eremeev, Sergey V; Chulkov, Evgeniy V; Chou, Jyh-Pin; Wei, Ching-Ming; Lai, Ming-Yu; Wang, Yuh-Lin; Zotov, Andrey V; Saranin, Alexander A

    2014-04-22

    To exploit Rashba effect in a 2D electron gas on silicon surface for spin transport, it is necessary to have surface reconstruction with spin-split metallic surface-state bands. However, metals with strong spin-orbit coupling (e.g., Bi, Tl, Sb, Pt) induce reconstructions on silicon with almost exclusively spin-split insulating bands. We propose a strategy to create spin-split metallic bands using a dense 2D alloy layer containing a metal with strong spin-orbit coupling and another metal to modify the surface reconstruction. Here we report two examples, i.e., alloying reconstruction with Na and Tl/Si(111)1 × 1 reconstruction with Pb. The strategy provides a new paradigm for creating metallic surface state bands with various spin textures on silicon and therefore enhances the possibility to integrate fascinating and promising capabilities of spintronics with current semiconductor technology.

  8. Review of corrosion behavior of ceramic heat exchanger materals: Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Munro, R.G.; Dapkunas, S.J.

    1993-09-01

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags.

  9. Thermal conductivity of titanium aluminum silicon nitride coatings deposited by lateral rotating cathode arc

    Energy Technology Data Exchange (ETDEWEB)

    Samani, M.K., E-mail: majid1@e.ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); CINTRA-CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553 (Singapore); Ding, X.Z. [Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Amini, S. [School of Materials Science and Engineering. Nanyang Technological University, 50 Nanyang Avenue, Singapore (Singapore); Khosravian, N.; Cheong, J.Y. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Chen, G. [BC Photonics Technological Company, 5255 Woodwards Rd., Richmond, BC V7E 1G9 (Canada); Tay, B.K. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); CINTRA-CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553 (Singapore)

    2013-06-30

    A series of physical vapour deposition titanium aluminum silicon nitride nanocomposite coating with a different (Al + Si)/Ti atomic ratio, with a thickness of around 2.5 μm were deposited on stainless steel substrate by a lateral rotating cathode arc process in a flowing nitrogen atmosphere. The composition and microstructure of the as-deposited coatings were analyzed by energy dispersive X-ray spectroscopy, and X-ray diffraction, and cross-sectional scanning electron microscopy observation. The titanium nitride (TiN) coating shows a clear columnar structure with a predominant (111) preferential orientation. With the incorporation of Al and Si, the crystallite size in the coatings decreased gradually, and the columnar structure and (111) preferred orientation disappeared. Thermal conductivity of the as-deposited coating samples at room temperature was measured by using pulsed photothermal reflectance technique. Thermal conductivity of the pure TiN coating is about 11.9 W/mK. With increasing the (Al + Si)/Ti atomic ratio, the coatings' thermal conductivity decreased monotonously. This reduction of thermal conductivity could be ascribed to the variation of coatings' microstructure, including the decrease of grain size and the resultant increase of grain boundaries, the disruption of columnar structure, and the reduced preferential orientation. - Highlights: • A series of titanium aluminum silicon nitride with different (Al + Si)/Ti atomic ratio were deposited on Fe304. • The composition and microstructure of the as-deposited coatings were analyzed. • Thermal conductivity of the samples was measured by pulsed photothermal reflectance. • With increasing the (Al + Si)/Ti atomic ratio, thermal conductivity decreased. • Reduction of thermal conductivity is ascribed to the variation of its microstructure.

  10. Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD

    NARCIS (Netherlands)

    Verlaan, V.; Houweling, Z.S.; van der Werf, C.H.M.; Romijn, I.G.; Schropp, R.E.I.; Goldbach, H.D.

    2008-01-01

    The application of hot-wire (HW) CVD deposited silicon nitride (SiNx) as passivating anti-reflection coating on multicrystalline silicon (mc-Si) solar cells is investigated. The highest efficiency reached is 15.7% for SiNx layers with an N/Si ratio of 1.20 and a high mass density of 2.9 g/cm3. These

  11. Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

    Science.gov (United States)

    Kiseleva, D. V.; Yurjev, Y. N.; Petrakov, Y. V.; Sidelev, D. V.; Korzhenko, D. V.; Erofeev, E. V.

    2017-01-01

    Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41·1023 – 3.48·1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.

  12. Simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by slurry-sampling graphite furnace AAS.

    Science.gov (United States)

    Minami, Hirotsugu; Yada, Masako; Yoshida, Tomomi; Zhang, Qiangbin; Inoue, Sadanobu; Atsuya, Ikuo

    2004-03-01

    A fast and accurate analytical method was established for the simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by graphite furnace atomic absorption spectrometry using a slurry sampling technique and a Hitachi Model Z-9000 atomic absorption spectrometer. The slurry samples were prepared by the ultrasonication of silicon carbide or silicon nitride powders with 0.1 M nitric acid. Calibration curves were prepared by using a mixed standard solution containing aluminum, calcium, iron and 0.1 M nitric acid. The analytical results of the proposed method for aluminum, calcium and iron in silicon carbide and silicon nitride reference materials were in good agreement with the reference values. The detection limits for aluminum, calcium and iron were 0.6 microg/g, 0.15 microg/g and 2.5 microg/g, respectively, in solid samples, when 200 mg of powdered samples were suspended in 20 ml of 0.1 M nitric acid and a 10 microl portion of the slurry sample was then measured. The relative standard deviation of the determination of aluminum, calcium and iron was 5 - 33%.

  13. Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.

    Directory of Open Access Journals (Sweden)

    Johan Jaime Medina Benavente

    Full Text Available Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. The coated surface was first examined in terms of wettability and topography using contact angle measurements and atomic force microscopy and then, conditioned silicon nitride surface was used as the substrate for the study of PC12 cell culture properties. We found that coating silicon nitride with poly-L-lysine increased surface hydrophilicity and that exposing this coated surface to an extracellular aqueous environment gradually decreased its roughness. When PC12 cells were cultured on a coated silicon nitride surface, adhesion and spreading were facilitated, and the cells showed enhanced morphological differentiation compared to those cultured on a plastic culture dish. A bromodeoxyuridine assay demonstrated that, on the coated silicon nitride surface, higher proportions of cells left the cell cycle, remained in a quiescent state and had longer survival times. Therefore, our study of the interaction of the silicon nitride surface with PC12 cells provides important information for the production of devices that need to have optimal cell culture-supporting properties in order to be used in the study of neuronal functions.

  14. Copper-Free Click Biofunctionalization of Silicon Nitride Surfaces via Strain-Promoted Alkyne-Azide Cycloaddition Reactions

    NARCIS (Netherlands)

    Manova, R.K.; Pujari, S.P.; Weijers, C.A.G.M.; Zuilhof, H.; Beek, van T.A.

    2012-01-01

    Cu-free "click" chemistry is explored on silicon nitride (Si3N4) surfaces as an effective way for oriented immobilization of biomolecules. An omega-unsaturated ester was grafted onto Si3N4 using UV irradiation. Hydrolysis followed by carbodiimide-mediated activation yielded surface-bound active succ

  15. Carbon nitride nanotubulite densely-packed and well-aligned tubular nanostructures

    Science.gov (United States)

    Suenaga, K.; Johansson, M. P.; Hellgren, N.; Broitman, E.; Wallenberg, L. R.; Colliex, C.; Sundgren, J.-E.; Hultman, L.

    1999-02-01

    Tubular carbon nitride (CN x, x=0.01-0.32) nanoparticles were successfully synthesized by d.c. magnetron sputtering. These tubes were grown in a highly packed form perpendicularly on a sodium chloride substrate. Their number density is estimated to be ˜1×10 4 per μm 2 and is constant over macroscopic regions. Sub-nanometer scale chemical mapping shows that the nitrogen to carbon atomic ratio is rather constant across these tubes. This successful synthesis of a nanotubulite - made of a rather compact aggregation of tubular nanoparticles - could facilitate experimental approaches to measure mechanical or electrical transport properties of such nanotubes and to open the way to variable nanotube applications.

  16. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

    Science.gov (United States)

    Liu, Li-Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D.; Zuilhof, Han; Chabal, Yves J.

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  17. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    Science.gov (United States)

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-09

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  18. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Energy Technology Data Exchange (ETDEWEB)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E. [Bilkent Univ., Ankara (Turkey). Dept. of Physics

    2001-07-01

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation. (orig.)

  19. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Science.gov (United States)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E.

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

  20. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    Science.gov (United States)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  1. The Combination of Direct and Confined Laser Ablation Mechanisms for the Selective Structuring of Thin Silicon Nitride Layers

    Science.gov (United States)

    Rapp, Stephan; Heinrich, Gerrit; Domke, Matthias; Huber, Heinz P.

    In the production process of microelectronic devices and high efficiency solar cells, local openings in thin dielectric layers are required. Instead of photolithographic, laser based processing enables to open these dielectric layers locally in a low-cost mass production step. In this work, thin silicon nitride layers deposited on planar silicon wafers are processed by single infrared Gaussian shaped 660 fs laser pulses. The transparent silicon nitride layer, becoming absorptive at fluences higher than 0.3 J/cm2, is selectively removed by confined ablation at fluences below that value. At pulse peak fluences exceeding 1.0 J/cm2 a "SiNx island"is created by direct ablation in the spot center. In this article, theselective SiNx ablation by a combination of confined and direct laser ablation at the medium pulse peak fluence of 0.5 J/cm2 is investigated. To clarify the influence of the nonlinear absorption in the pulse center, the ablation behavior is investigated by time- and space-resolved pump-probe microscopy experiments. The results showphase changes in the silicon and in the silicon nitride in the first picoseconds after excitation, the ablation onset at around 10 ps and the subsequent mechanical materialmotion after a few nanoseconds. The actual silicon nitride layer removal starts after around 10 ns, whereas confined ablation processes are the driving mechanisms even in the nonlinearly absorbing spot center. A comparison of the energetic ablation efficiency of the SiNx layer system to further dielectric thin films shows no detrimental influence of the nonlinear absorbance.

  2. The Silicon / Silicon Nitride Interface and Fracture in Si: Molecular Dynamics Simulations

    Science.gov (United States)

    Bachlechner, Martina E.; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar

    1997-03-01

    The interface structure of a Si_3N_4(0001) film on a Si(111) substrate is studied using the molecular dynamics (MD) method. Bulk Si is described by the Stillinger-Weber potential and Si_3N4 by a combination of two-body and three-body contributions. At the interface, the charge transfer from silicon to nitrogen is taken from LCAO electronic structure calculations. Using these Si, Si_3N4 and interface interactions in MD simulations, we determine structural correlations in the interfacial regions. Results for crack propagation in silicon will also be presented.

  3. Effect of ion nitriding on the abrasive wear resistance of ultrahigh-strength steels with different silicon contents

    Science.gov (United States)

    Riofano, R. M. Muñoz; Casteletti, L. C.; Nascente, P. A. P.

    2005-02-01

    This article studies the effect of silicon (Si) on ultrahigh-strength AISI 4340 steels in connection with the thermal treatment, as well as the influence of this element on nitriding and, consequently, abrasive wear. Four alloys with different Si contents were nitrided at 350 °C (4 and 8 h) and 500 and 550 °C (2 and 4 h) in a gas mixture of 80 vol.% H2 and 20 vol.% N2. The nitrided layers were characterized by microhardness and pin-on-disk tests, optical microscopy, scanning electron microscopy with energy-dispersive x-ray spectrometry, and x-ray diffraction (XRD). The increase in Si enhanced the tempering resistance of the steels and also improved considerably the hardness of the nitrided layers. The increase in Si produced thinner compound layers with better hardness quality and high abrasive wear resistance. XRD analysis detected a mixture of nitrides in the layers γ‧-Fe4N, ɛ-Fe2 3N, CrN, MoN, and Si3N4 with their proportions varying with the nitriding conditions.

  4. Electromagnetically induced transparency and wide-band wavelength conversion in silicon nitride microdisk optomechanical resonators

    CERN Document Server

    Liu, Yuxiang; Aksyuk, Vladimir; Srinivasan, Kartik

    2013-01-01

    We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor (Q) of 10^6, and radial breathing mechanical modes with a Q=10^4 and a resonance frequency of 625 MHz, so that the system is in the resolved sideband regime. Placing a strong optical control field on the red (blue) detuned sideband of the optical mode produces coherent interference with a resonant probe beam, inducing a transparency (absorption) window for the probe. This is observed for multiple optical modes of the device, all of which couple to the same mechanical mode, and which can be widely separated in wavelength due to the large bandgap of Si3N4. These properties are exploited to demonstrate frequency upconversion and downconversion of optical signals between the 1300 nm and 980 nm bands.

  5. Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

    CERN Document Server

    Navarro-Urrios, Daniel; Capuj, Nestor E; Berencen, Yonder; Garrido, Blas; Tredicucci, Alessandro

    2015-01-01

    We demonstrate the integration of Nd3+ doped Barium-Titanium-Silicate microsphere lasers with a Silicon Nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity=0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On th...

  6. Design and optimization of optical modulators based on graphene-on-silicon nitride microring resonators

    CERN Document Server

    Wu, Zeru; Zhang, Tianyou; Shao, Zengkai; Wen, Yuanhui; Xu, Pengfei; Zhang, Yanfeng; Yu, Siyuan

    2016-01-01

    In order to overcome the challenge of obtaining high modulation depth due to weak graphene-light interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene's gate-tunable optical conductivity is proposed and studied. Geometrical parameters of graphene-on-SiNx waveguide are systematically analyzed and optimized, yielding a loss tunability of 0.04 dB/{\\mu}m and an effective index variation of 0.0022. We explicitly study the interaction between graphene and a 40-{\\mu}m-radius microring resonator, where electro-absorptive and electro-refractive modulation are both taken into account. By choosing appropriate graphene coverage and coupling coefficient, a high modulation depth of over 40 dB with large fabrication tolerance is obtained.

  7. Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

    Science.gov (United States)

    Maezono, Yoshinari; Toshikawa, Kiyohiko; Kurosawa, Kou; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi

    2007-06-01

    In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp (λ=126 nm, hν=9.8 eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.

  8. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  9. Design and optimization of optical modulators based on graphene-on-silicon nitride microring resonators

    Science.gov (United States)

    Wu, Zeru; Chen, Yujie; Zhang, Tianyou; Shao, Zengkai; Wen, Yuanhui; Xu, Pengfei; Zhang, Yanfeng; Yu, Siyuan

    2017-04-01

    In order to overcome the challenge of obtaining high modulation depth due to weak graphene–light interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene’s gate-tunable optical conductivity is proposed and studied. Geometrical parameters of graphene-on-SiNx waveguide are systematically analyzed and optimized, yielding a loss tunability of 0.04 dB μm‑1 and an effective index variation of 0.0022. We explicitly study the interaction between graphene and a 40 μm-radius microring resonator, where electro-absorptive and electro-refractive modulation are both taken into account. By choosing appropriate graphene coverage and coupling coefficient, a high modulation depth of over 40 dB with large fabrication tolerance is obtained.

  10. Preparation and Properties of Macroporous Silicon Nitride Ceramics by Gelcasting and Carbonthermal Reaction

    Institute of Scientific and Technical Information of China (English)

    Wen ZHANG; Hongjie WANG; Zhihao JIN

    2005-01-01

    Macroporous silicon nitride (Si3N4) ceramics with high strength, uniform structure and relatively high porosity were obtained by gelcasting and carbonthermal reaction in a two-step sintering technique. Microstructure and composition were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction(XRD). Open porosity, pore size distribution and basic mechanical performance were measured by Archimedes method,mercury intrusion porosimetry and three-point bending methods, respectively. SEM and TEM results revealed that pores were formed by elongated β-Si3N4. SADP measurement proved the formation of SiC particles. The SiC granules were beneficial for the formation of high ratio elongated β-Si3N4, and at proper amount, they also acted as reinforcement phase. Thermodynamic analysis indicated that the mechanisms of the reactions were mainly associated with liquid-solid reaction and gas-liquid reaction.

  11. Photonic crystal dumbbell resonators in silicon and aluminum nitride integrated optical circuits

    CERN Document Server

    Pernice, W H P; Tang, H X

    2014-01-01

    Tight confinement of light in photonic cavities provides an efficient template for the realization of high optical intensity with strong field gradients. Here we present such a nanoscale resonator device based on a one-dimensional photonic crystal slot cavity. Our design allows for realizing highly localized optical modes with theoretically predicted Q factors in excess of 106. The design is demonstrated experimentally both in a high-contrast refractive index system (silicon), as well as in medium refractive index contrast devices made from aluminum nitride. We achieve extinction ratio of 21dB in critically coupled resonators using an on-chip readout platform with loaded Q factors up to 33,000. Our approach holds promise for realizing ultra-small opto-mechanical resonators for high-frequency operation and sensing applications.

  12. Nanofluidic chip for liquid TEM cell fabricated by parylene and silicon nitride direct bonding

    Science.gov (United States)

    Jang, Heejun; Kang, Il-Suk; Kim, Jihye; Kim, Jonghyun; Cha, Yun Jeong; Yoon, Dong Ki; Lee, Wonhee

    2017-09-01

    Despite the importance of nanofluidic transmission electron microscope (TEM) chips, a simple fabrication method has yet to be developed due to the difficulty of wafer bonding techniques using a nanoscale thick bonding layer. We present a simple and robust wafer scale bonding technique using parylene as a bonding layer. A nanoscale thick parylene layer was deposited on a silicon nitride (SiN) wafer and patterned to construct nanofluidic channels. The patterned parylene layer was directly bonded to another SiN wafer by thermal surface activation and bonding, with a bonding strength of ˜3 MPa. Fourier transform infrared spectroscopy showed that carbon-oxygen bonds were generated by thermal activation. We demonstrated TEM imaging of gold nanoparticles suspended in liquid using the fabricated nanofluidic chip.

  13. Synthesis of “in situ” reinforced silicon nitride composites

    Directory of Open Access Journals (Sweden)

    LJILJANA ZIVKOVIC

    2004-01-01

    Full Text Available The objective of this work was to investigate the effect of two different sintering additives (CeO2 and Y2O3 + Al2O3, sintering time and amount of b-Si3N4 seeds on the densification, mechanical properties and microstructure of self-reinforced Si3N4 based composites obtained by pressureless sintering. Preparation of b-Si3N4 seeds, also obtained by a pressureless sintering procedure, is described. Samples without seeds were prepared for comparison. The results imply that self-reinforced silicon nitride based composites with densities close to the theoretical values and with fracture toughness of 9.3 MPa m1/2 can be obtained using a presureless sintering procedure.

  14. Self-referenced silicon nitride array microring biosensor for toxin detection using glycans at visible wavelength

    Science.gov (United States)

    Ghasemi, Farshid; Eftekhar, Ali A.; Gottfried, David S.; Song, Xuezheng; Cummings, Richard D.; Adibi, Ali

    2013-02-01

    We report on application of on-chip referencing to improve the limit-of-detection (LOD) in compact silicon nitride (SiN) microring arrays. Microring resonators, fabricated by e-beam lithography and fluorine-based etching, are designed for visible wavelengths (656nm) and have a footprint of 20 x 20 μm. GM1 ganglioside is used as the specific ligand for recognition of Cholera Toxin Subunit B (CTB), with Ricinus Communis Agglutinin I (RCA I) as a negative control. Using micro-cantilever based printing less than 10 pL of glycan solution is consumed per microring. Real-time data on analyte binding is extracted from the shifts in resonance wavelengths of the microrings.

  15. Design Evaluation Using Finite Element Analysis of Cooled Silicon Nitride Plates for a Turbine Blade Application

    Science.gov (United States)

    Abdul-Aziz, Ali; Baaklini, George Y.; Bhatt, Ramakrishna T.

    2001-01-01

    Two- and three-dimensional finite element analyses were performed on uncoated and thermal barrier coated (TBC) silicon nitride plates with and without internal cooling by air. Steady-state heat-transfer analyses were done to optimize the size and the geometry of the cooling channels to reduce thermal stresses, and to evaluate the thermal environment experienced by the plate during burner rig testing. The limited experimental data available were used to model the thermal profile exerted by the flame on the plate. Thermal stress analyses were performed to assess the stress response due to thermal loading. Contours for the temperature and the representative stresses for the plates were generated and presented for different cooling hole sizes and shapes. Analysis indicates that the TBC experienced higher stresses, and the temperature gradient was much reduced when the plate was internally cooled by air. The advantages and disadvantages of several cooling channel layouts were evaluated.

  16. Paralinear Oxidation of Silicon Nitride in a Water Vapor/Oxygen Environment

    Science.gov (United States)

    Fox, Dennis S.; Opila, Elizabeth J.; Nguyen, QuynhGiao; Humphrey, Donald L.; Lewton, Susan M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Three silicon nitride materials were exposed to dry oxygen flowing at 0.44 cm/s at temperatures between 1200 and 1400 C. Reaction kinetics were measured with a continuously recording microbalance. Parabolic kinetics were observed. When the same materials were exposed to a 50% H2O - 50% O2 gas mixture flowing at 4.4 cm/s, all three types exhibited paralinear kinetics. The material is oxidized by water vapor to form solid silica. The protective silica is in turn volatilized by water vapor to form primarily gaseous Si(OH)4. Nonlinear least squares analysis and a paralinear kinetic model were used to determine both parabolic and linear rate constants from the kinetic data. Volatilization of the protective silica scale can result in accelerated consumption of Si3N4. Recession rates under conditions more representative of actual combustors are compared to the furnace data.

  17. The cost of silicon nitride powder: What must it be to compete

    Energy Technology Data Exchange (ETDEWEB)

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  18. The cost of silicon nitride powder: What must it be to compete?

    Energy Technology Data Exchange (ETDEWEB)

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  19. Atomic resolution transmission electron microscopy of the intergranular structure of a Y{sub 2}O{sub 3}-silicon nitride ceramic

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, A.; Kisielowski, C.; Hoffmann, M.J.; Ritchie, R.O.

    2002-05-01

    High-resolution transmission electron microscopy (HRTEM) employing focus-variation phase-reconstruction methods is used to image the atomic structure of grain boundaries in a silicon nitride ceramic at a resolution of 0.8 Angstrom

  20. Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

    Science.gov (United States)

    Yao, Guisheng; Li, Yong; Jiang, Peng; Jin, Xiuming; Long, Menglong; Qin, Haixia; Kumar, R. Vasant

    2017-04-01

    Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O.

  1. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Teii, Kungen, E-mail: teii@asem.kyushu-u.ac.jp; Mizusako, Yusei; Hori, Takuro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, Seiichiro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  2. Far IR Transmission Characteristics of Silicon Nitride Films using Fourier Transform Spectroscopy

    Science.gov (United States)

    Ferrusca, D.; Castillo-Domínguez, E.; Velázquez, M.; Hughes, D.; Serrano, A.; Torres-Jácome, A.

    2009-12-01

    We are fabricating amorphous Silicon (a-Si) bolometers doped with boron with a measured NEP˜1.5×10-16 W/Hz1/2 suitable for use in millimeter and sub-millimeter astronomy. In this paper we present the preliminary results of the absorber optimization for the a-Si bolometers. A film of Silicon Nitride (SiN), deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process at INAOE, with or without metallic coating is used as a weak thermal link to the heat sink as well as an absorber. We have measured the transmission spectrum of thin films of SiN in the range of 200 to 1000 GHz using Fourier Transform Spectroscopy (FTS) and a bolometric system with a NEP˜1.26×10-13. The transmission of thin films of SiN with a thickness of 0.4 μn has been measured at temperatures of 290 K and 4 K. The uncoated SiN films have a transmission of 80% and we expect a 50% transmission for the metallic (e.g. Titanium) coated films.

  3. Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

    Science.gov (United States)

    Gleskova, H.; Wagner, S.; Gašparík, V.; Kováč, P.

    2001-05-01

    We optimized silicon nitride (SiN x) layers, deposited by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) at 150°C, to provide a high quality gate dielectric layer for the amorphous silicon thin film technology on polyimide foils. The layers were deposited from mixtures of silane, ammonia, and hydrogen. We varied the H 2 flow rate from 55 to 220 sccm and the rf power from 5 to 50 W, while the pressure was kept at 500 mTorr and the ratio of ammonia to silane flow at 10:1. The best film was obtained from the gas composition of SiH 4:NH 3:H 2=1:10:44 and the rf power of ˜20 W. This film grows at the rate of 1.5 Å/s, has a refractive index n=1.80, a dielectric constant ɛ=7.46, a dielectric breakdown field >3.4 MV/cm, a Si/N ratio of ˜0.67, and a hydrogen content of ˜2×10 22 cm -3, and etches in 10:1 buffered HF at a rate of 61 Å/s.

  4. Effect of Grinding and Polishing on the Residual Stress and Bending Strength of a Silicon Nitride Ceramic

    Institute of Scientific and Technical Information of China (English)

    GAO Ling; YANG Haitao; DU Daming; ZHAO Shikun; LI Huaping; YUAN Runzhang

    2005-01-01

    The residual stresses on the surface of the differently ground and polished silicon nitride ceramics were measured using X-ray diffraction and identified by SEM.The effect of the residual stress on the bending strength was investigated.The investigations show that the grinding process can introduce subatantial tensile residual stresses up to 290MPa on the surface of silicon nitride ceramics,which has a significant effect on reducing the bending strength of the ceramics after grinding.Thus,in comparison with the ceramics with a rough surface,the ceramics with a mirror image surface may have a lower strength.Polishing can smooth the residual stresses.When we evaluate the quality of the ceramic components after grinding,we must take residual stress into consideration. The grinding methods and grinding conditions must be carefully selected in order to get the favorite residual stress as well as the surface smoothness.

  5. Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride

    Science.gov (United States)

    Tong, Jingnan; To, Alexander; Lennon, Alison; Hoex, Bram

    2017-08-01

    Silicon nitride (SiN x ) synthesised by low-temperature plasma enhanced chemical vapour deposition (PECVD) is the most extensively used antireflection coating for crystalline silicon solar cells because of its tunable refractive index in combination with excellent levels of surface and bulk passivation. This has attracted a significant amount of research on developing SiN x films towards an optimal electrical and optical performance. Typically, recipes are first optimised in lab-scale reactors and subsequently, the best settings are transferred to high-throughput reactors. In this paper, we show that for one particular, but widely used, PECVD reactor configuration this upscaling is severely hampered by an important experimental artefact. Specifically, we report on the unintentional deposition of a dual layer structure in a dual mode AK 400 plasma reactor from Roth & Rau which has a significant impact on its surface passivation performance. It is found that the radio frequency (RF) substrate bias ignites an unintentional depositing plasma before the ignition of the main microwave (MW) plasma. This RF plasma deposits a Si-rich intervening SiN x layer (refractive index = 2.4) while using a recipe for stoichiometric SiN x . This layer was found to be 18 nm thick in our case and had an extraordinary impact on the Si surface passivation, witnessed by a reduction in effective surface recombination velocity from 22.5 to 6.2 cm/s. This experimental result may explain some “out of the ordinary” excellent surface passivation results reported recently for nearly stoichiometric SiN x films and has significant consequences when transferring these results to high-throughput deposition systems.

  6. Fourier transform infrared analysis of ceramic powders: Quantitative determination of alpha, beta, and amorphous phases of silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Trout, T.K.; Bellama, J.M.; Brinckman, F.E.; Faltynek, R.A.

    1989-03-01

    Fourier transform infrared spectroscopy (FT-IR) forms the basis for determining the morphological composition of mixtures containing alpha, beta, and amorphous phases of silicon nitride. The analytical technique, involving multiple linear regression treatment of Kubelka-Munk absorbance values from diffuse reflectance measurements, yields specific percent composition data for the amorphous phase as well as the crystalline phases in ternary mixtures of 0--1% by weight Si/sub 3/N/sub 4/ in potassium bromide.

  7. Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

    OpenAIRE

    Ryoji Yukino; Pankaj K. Sahoo; Jaiyam Sharma; Tsukasa Takamura; Joby Joseph; Adarsh Sandhu

    2017-01-01

    We describe wavelength tuning in a one dimensional (1D) silicon nitride nano-grating guided mode resonance (GMR) structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation) for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position...

  8. Void formation at silicon nitride/silicon interfaces studied by variable-energy positrons

    Energy Technology Data Exchange (ETDEWEB)

    Halec, A.; Schultz, P.J. [University of Western Ontario, London, ON (Canada). Dept. of Physics; Boudreau, M.; Boumerzoug, M.; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Engineering Physics; McCaffrey, J.P.; Jackman, T.E. [National Research Council of Canada, Ottawa, ON (Canada)

    1994-12-31

    Variable-energy positrons (VEP) were used to study the depth distribution of defects in SiN {sub x}/Si structures fabricated using ditertiary butyl silane (CONSI 4000) as the silicon precursor in an electron cyclotron resonance plasma chemical vapour deposition system. Films were grown to thicknesses ranging from 500 to 3500 A at substrate temperatures between room temperature and 400{sup o}C and under various plasma conditions. The VEP results give evidence for differing concentrations of very large open-volume defects at several of the SiN {sub x}/Si interfaces, confirmed by transmission and scanning electron microscopy. Their presence was correlated with non-reactive organosilicon adsorption on the substrates prior to the thin film deposition. (author).

  9. Effects of Aqueous Vapour Consistence in Nitriding Furnace on the Quality of the Sintered Nitride

    Institute of Scientific and Technical Information of China (English)

    WANGZijiang

    1998-01-01

    If the aqueous vapour consistence is too high(>0.7%),it is very disadvantageous to the sintered products in the nitriding furnace,when silcon nitride bonded silicon carbide products are synthesized by nitridation of silicon.

  10. Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.

    Science.gov (United States)

    Kim, Kyeong Heon; Kim, Su Jin; Lee, Tae Ho; Lee, Byeong Ryong; Kim, Tae Geun

    2016-08-08

    Transparent conductive electrodes with good conductivity and optical transmittance are an essential element for highly efficient light-emitting diodes. However, conventional indium tin oxide and its alternative transparent conductive electrodes have some trouble with a trade-off between electrical conductivity and optical transmittance, thus limiting their practical applications. Here, we present silicon nitride transparent conductive electrodes with conducting filaments embedded using the electrical breakdown process and investigate the dependence of the conducting filament density formed in the transparent conductive electrode on the device performance of gallium nitride-based vertical light-emitting diodes. Three gallium nitride-on-silicon-based vertical light-emitting diodes using silicon nitride transparent conductive electrodes with high, medium, and low conducting filament densities were prepared with a reference vertical light-emitting diode using metal electrodes. This was carried to determine the optimal density of the conducting filaments in the proposed silicon nitride transparent conductive electrodes. In comparison, the vertical light-emitting diodes with a medium conducting filament density exhibited the lowest optical loss, direct ohmic behavior, and the best current injection and distribution over the entire n-type gallium nitride surface, leading to highly reliable light-emitting diode performance.

  11. Surface toughness of silicon nitride bioceramics: II, Comparison with commercial oxide materials.

    Science.gov (United States)

    McEntire, Bryan J; Enomoto, Yuto; Zhu, Wenliang; Boffelli, Marco; Marin, Elia; Pezzotti, Giuseppe

    2016-02-01

    Raman microprobe-assisted indentation, a micromechanics method validated in a companion paper, was used to compare the surface toughening behaviors of silicon nitride (Si3N4) and alumina-based bioceramics employed in joint arthroplasty (i.e., monolithic alumina, Al2O3, and yttria-stabilized zirconia (ZrO2)-toughened alumina, ZTA). Quantitative assessments of microscopic stress fields both ahead and behind the tip of Vickers indentation cracks propagated under increasing indentation loads were systematically made using a Raman microprobe with spatial resolution on the order of a single micrometer. Concurrently, crack opening displacement (COD) profiles were monitored on the same microcracks screened by Raman spectroscopy. The Raman eye clearly visualized different mechanisms operative in toughening Si3N4 and ZTA bioceramics (i.e., crack-face bridging and ZrO2 polymorphic transformation, respectively) as compared to the brittle behavior of monolithic Al2O3. Moreover, emphasis was placed on assessing not only the effectiveness but also the durability of such toughening effects when the biomaterials were aged in a hydrothermal environment. A significant degree of embrittlement at the biomaterial surface was recorded in the transformation-toughened ZTA, with the surface toughness reduced by exposure to the hydrothermal environment. Conversely, the Si3N4 biomaterial experienced a surface toughness value independent of hydrothermal attack. Crack-face bridging thus appears to be a durable surface toughening mechanism for biomaterials in joint arthroplasty.

  12. Stress engineering with silicon nitride stressors for Ge-on-Si lasers

    CERN Document Server

    Ke, Jiaxin; Guangrui,; Xia,

    2016-01-01

    Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency {\\eta}wp of Ge-on-Si lasers. Side stressors only turned out to be a more efficient way to increase {\\eta}wp than using top and side stressors together. With the side stressors only and geometry optimizations, a {\\eta}wp of 30.5% and an Ith of 50 mA (Jth of 37 kA/cm2) can be achieved with the defect limited carrier lifetime of 1 nsec. With the defect limited carrier lifetime of 10 nsec, an Ith of 7.8 mA (Jth of 5.8 kA/cm2) and a wall-plug efficiency of 38.7% can be achieved. These are tremendous improvements from the case without any stressors. These results give strong support to the Ge-on-Si laser technology and provide an effective way to improve the Ge laser performance.

  13. Indentation strength of silicon nitride ceramics processed by spark plasma sintering technique

    Energy Technology Data Exchange (ETDEWEB)

    Azeggagh, N. [Université de Lyon, INSA-Lyon, LaMCoS CNRS UMR5259, F-69621 Villeurbanne (France); Université de Lyon, INSA-Lyon, MATEIS CNRS UMR5510, F-69621 Villeurbanne (France); Tohoku University, 6-6-11, Aza-Aoba, Aramaki, Aobaku, Sendai 980-8579 (Japan); Joly-Pottuz, L., E-mail: lucile.joly-pottuz@insa-lyon.fr [Université de Lyon, INSA-Lyon, MATEIS CNRS UMR5510, F-69621 Villeurbanne (France); Chevalier, J. [Université de Lyon, INSA-Lyon, MATEIS CNRS UMR5510, F-69621 Villeurbanne (France); Omori, M.; Hashida, T. [Tohoku University, 6-6-11, Aza-Aoba, Aramaki, Aobaku, Sendai 980-8579 (Japan); Nélias, D. [Université de Lyon, INSA-Lyon, LaMCoS CNRS UMR5259, F-69621 Villeurbanne (France)

    2015-09-17

    We investigated the influence of the microstructure on the true stress–strain curve of silicon nitride based ceramics. The materials were processed by spark plasma sintering technique. Si{sub 3}N{sub 4} with fine, average and coarse microstructures were obtained. Load versus displacement curves (P–h) were obtained by means of instrumented indentation technique using diamond coni-spherical tip. The experimental data were coupled with a minimization method based on the Levenberg–Marquardt algorithm and the non-linear part of the mechanical response was identified. Based on the obtained stress–strain curves, rolling contact simulations were performed. In addition, the nature of Hertzian contact damage was examined in the material with coarse microstructure using diamond indenters of radii 0.2 and 1 mm. The surface damage was observed under optical microscopy while Focused Ion Beam Sectioning technique permitted to image the subsurface damage. An evident size effect was noticed: fracture consisting of classical ring cracks dominated at large scale while distributed microcracks beneath the indent dominated at small scale.

  14. Atomic-Resolution Observations of Semi-Crystalline IntegranularThin Films in Silicon Nitride

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Alexander; Idrobo, Juan C.; Cinibulk, Michael K.; Kisielowski, Christian; Browning, Nigel D.; Ritchie, Robert O.

    2005-08-01

    The thin intergranular phase in a silicon nitride (Si3N4)ceramic, which has been regarded for decades as having an entirely amorphous morphology, is shown to have a semi-crystalline structure. Using two different but complementary high-resolution electron microscopy methods, the intergranular atomic structure was directly imaged at the atomic level. These high-resolution images show that the atomic arrangement of the dopand element cerium takes very periodic positions not only along the interface between the intergranular phase and the Si3N4 matrix grains, but it arranges in a semi-crystalline structure that spans the entire width of the intergranular phase between two adjacent matrix grains, in principle connecting the two separate matrix grains. The result will have implications on the approach of understanding the materials properties of ceramics, most significantly on the mechanical properties and the associated computational modeling of the atomic structure of the thin intergranular phase in Si3N4 ceramics.

  15. The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Mikšová, R., E-mail: miksova@ujf.cas.cz [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Hnatowicz, V. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Macková, A.; Malinský, P. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Slepička, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2015-07-01

    The stopping power and energy straggling of {sup 12}C{sup 3+} and {sup 16}O{sup 3+} ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C{sup 3+} ion energy losses comparing to O{sup 3+} ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%.

  16. A Monolithic Radiation-Pressure Driven, Low Phase Noise Silicon Nitride Opto-Mechanical Oscillator

    CERN Document Server

    Tallur, Siddharth; Bhave, Sunil A

    2011-01-01

    Cavity opto-mechanics enabled radiation pressure (RP) driven oscillators shown in the past offer an all optical Radio Frequency (RF) source without the need for external electrical feedback. However these oscillators require external tapered fiber or prism coupling and non-standard fabrication processes. In this work, we present a CMOS compatible fabrication process to design high optical quality factor opto-mechanical resonators in silicon nitride. The ring resonators designed in this process demonstrate low phase noise RP driven oscillations. Using integrated grating couplers and waveguide to couple light to the micro-resonator eliminates 1/f^3 and other higher order phase noise slopes at close-to-carrier frequencies present in previous demonstrations. We present an RP driven OMO operating at 41.97MHz with a signal power of -11dBm and phase noise of -85dBc/Hz at 1kHz offset with only 1/f^2 noise down to 10Hz offset from carrier.

  17. Extreme value statistics analysis of fracture strengths of a sintered silicon nitride failing from pores

    Science.gov (United States)

    Chao, Luen-Yuan; Shetty, Dinesh K.

    1992-01-01

    Statistical analysis and correlation between pore-size distribution and fracture strength distribution using the theory of extreme-value statistics is presented for a sintered silicon nitride. The pore-size distribution on a polished surface of this material was characterized, using an automatic optical image analyzer. The distribution measured on the two-dimensional plane surface was transformed to a population (volume) distribution, using the Schwartz-Saltykov diameter method. The population pore-size distribution and the distribution of the pore size at the fracture origin were correllated by extreme-value statistics. Fracture strength distribution was then predicted from the extreme-value pore-size distribution, usin a linear elastic fracture mechanics model of annular crack around pore and the fracture toughness of the ceramic. The predicted strength distribution was in good agreement with strength measurements in bending. In particular, the extreme-value statistics analysis explained the nonlinear trend in the linearized Weibull plot of measured strengths without postulating a lower-bound strength.

  18. Dispersion engineering and frequency comb generation in thin silicon nitride concentric microresonators.

    Science.gov (United States)

    Kim, Sangsik; Han, Kyunghun; Wang, Cong; Jaramillo-Villegas, Jose A; Xue, Xiaoxiao; Bao, Chengying; Xuan, Yi; Leaird, Daniel E; Weiner, Andrew M; Qi, Minghao

    2017-08-29

    Kerr nonlinearity-based frequency combs and solitons have been generated from on-chip microresonators. The initiation of the combs requires global or local anomalous dispersion which leads to many limitations, such as material choice, film thickness, and spectral ranges where combs can be generated, as well as fabrication challenges. Using a concentric racetrack-shaped resonator, we show that such constraints can be lifted and resonator dispersion can be engineered to be anomalous over moderately broad bandwidth. We demonstrate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to result in waveguides with high normal dispersion. Together with a mode-selective, tapered coupling scheme, we generate coherent mode-locked frequency combs. Our method can realize anomalous dispersion for resonators at almost any wavelength and simultaneously achieve material and process compatibility with semiconductor manufacturing.Kerr frequency comb generation from microresonators requires anomalous dispersion, imposing restrictions on materials and resonator design. Here, Kim et al. propose a concentric racetrack-resonator design where the dispersion can be engineered to be anomalous via resonant mode coupling.

  19. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Directory of Open Access Journals (Sweden)

    Shouleh Nikzad

    2016-06-01

    Full Text Available Ultraviolet (UV studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  20. Triply resonant coherent four-wave mixing in silicon nitride microresonators.

    Science.gov (United States)

    Fülöp, Attila; Krückel, Clemens J; Castelló-Lurbe, David; Silvestre, Enrique; Torres-Company, Victor

    2015-09-01

    Generation of multiple tones using four-wave mixing (FWM) has been exploited for many applications, ranging from wavelength conversion to frequency comb generation. FWM is a coherent process, meaning that its dynamics strongly depend on the relative phase among the waves involved. The coherent nature of FWM has been exploited for phase-sensitive processing in different waveguide structures, but it has never been studied in integrated microresonators. Waveguides arranged in a resonant way allow for an effective increase in the wavelength conversion efficiency (at the expense of a reduction in the operational bandwidth). In this Letter, we show that phase shaping of a three-wave pump provides an extra degree of freedom for controlling the FWM dynamics in microresonators. We present experimental results in single-mode, normal-dispersion high-Q silicon nitride resonators, and numerical calculations of systems operating in the anomalous dispersion regime. Our results indicate that the wavelength conversion efficiency and modulation instability gain in microcavities pumped by multiple waves can be significantly modified with the aid of simple lossless coherent control techniques.

  1. Fabrication and secondary-phase crystallization of rare-earth disilicate-silicon nitride ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Cinibulk, M.K.; Thomas, G. (Lawrence Berkeley Lab., CA (United States). Center for Advanced Materials); Johnson, S.M. (SRI International, Menlo Park, CA (United States). Materials Research Lab.)

    1992-08-01

    In this paper, the fabrication and intergranular-phase devitrification of silicon nitride densified with rare-earth (RE) oxide additives is investigated. The additions of the oxides of Sm, Gd, Dy, Er, and Yb, having high melting points and behaving similarly to Y[sub 2]O[sub 3], were compositionally controlled to tailor a microstructure with a crystalline secondary phase of RE[sub 2]Si[sub 2]O[sub 7]. The lanthanide oxides were found to be ass effective as Y[sub 2]O[sub 3] in densifying Si[sub 3]N[sub 4], resulting in identical microstructures and densities of 98-99% of theoretical density. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a thin residual amorphous film which was observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification.

  2. Processing of Silicon Nitride Ceramics from Concentrated Aqueous Suspensions by Robocasting

    Energy Technology Data Exchange (ETDEWEB)

    HE,GUOPING; HIRSCHFELD,DEIDRE A.; CESARANO III,JOSEPH; STUECKER,JOHN N.

    2000-08-14

    The optimization of concentrated AlliedSignal GS-44 silicon nitride aqueous slurries for robocasting was investigated. The dispersion mechanisms of GS-44 Si{sub 3}N{sub 4} aqueous suspensions with and without polyacrylate were analyzed. The zero point of charge (ZPC) was at about pH 6. Well-dispersed GS-44 suspensions were obtained in the pH range from 7 to 11 by the addition of Darvan 821A. The influence of pH, amount of Darvan 821A and solids loading on the theological behavior of GS-44 aqueous suspensions was determined. A coagulant, aluminum nitrate, was used to control the yield stress and shear thinning behavior of highly loaded Si{sub 3}N{sub 4} slurries. Homogeneous and stable suspensions of 52 vol% GS-44 Si{sub 3}N{sub 4} were robocast successfully at pH 7.8 to pH 8.5. The sintering process, mechanical properties and microstructural characteristics of robocast GS-44 bars were determined.

  3. Characterisation of multi-mode propagation in silicon nitride slab waveguides

    Science.gov (United States)

    Jennings, B. D.; McCloskey, D.; Gough, J. J.; Hoang, T.; Abadía, N.; Zhong, C.; Karademir, E.; Bradley, A. L.; Donegan, J. F.

    2017-01-01

    A simple experimental method for determining the number of modes in planar dielectric multi-mode waveguides, and the effective index difference of these modes, is presented. Applying a thin, dye-doped polymer cladding, the fluorescence excited by multiple modes propagating in a silicon nitride slab waveguide is imaged to extract information. Interference between the modes produces a structured intensity profile along the waveguide which is constant in time. The spatial frequencies of this intensity profile are directly linked to the propagation constants of the underlying modes. Through a discrete Fourier transform, the modes’ effective index differences are found and compare well with analytically calculated values. Furthermore, the amplitudes in the Fourier transform are directly related to the power in each mode. Comparing the amplitudes of the Fourier components as a function of propagation distance, an estimate of the propagation losses of the individual modes relative to one another is made. The method discussed could be applied to analysing mode behaviour in integrated photonic devices, most notably in mode-division multiplexing.

  4. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    CERN Document Server

    Shiue, Ren-Jye; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dimitri; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-01-01

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photorespo...

  5. Fuzzy sets predict flexural strength and density of silicon nitride ceramics

    Science.gov (United States)

    Cios, Krzysztof J.; Sztandera, Leszek M.; Baaklini, George Y.; Vary, Alex

    1993-01-01

    In this work, we utilize fuzzy sets theory to evaluate and make predictions of flexural strength and density of NASA 6Y silicon nitride ceramic. Processing variables of milling time, sintering time, and sintering nitrogen pressure are used as an input to the fuzzy system. Flexural strength and density are the output parameters of the system. Data from 273 Si3N4 modulus of rupture bars tested at room temperature and 135 bars tested at 1370 C are used in this study. Generalized mean operator and Hamming distance are utilized to build the fuzzy predictive model. The maximum test error for density does not exceed 3.3 percent, and for flexural strength 7.1 percent, as compared with the errors of 1.72 percent and 11.34 percent obtained by using neural networks, respectively. These results demonstrate that fuzzy sets theory can be incorporated into the process of designing materials, such as ceramics, especially for assessing more complex relationships between the processing variables and parameters, like strength, which are governed by randomness of manufacturing processes.

  6. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    Science.gov (United States)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  7. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    Science.gov (United States)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  8. Modification of silicon nitride surfaces with GOPES and APTES for antibody immobilization: computational and experimental studies

    Science.gov (United States)

    Dien To, Thien; Nguyen, Anh Tuan; Nhat Thanh Phan, Khoa; Thu Thi Truong, An; Doan, Tin Chanh Duc; Mau Dang, Chien

    2015-12-01

    Chemical modification of silicon nitride (SiN) surfaces by silanization has been widely studied especially with 3-(aminopropyl)triethoxysilane (APTES) and 3-(glycidyloxypropyl) dimethylethoxysilane (GOPES). However few reports performed the experimental and computational studies together. In this study, surface modification of SiN surfaces with GOPES and APTES covalently bound with glutaraldehyde (GTA) was investigated for antibody immobilization. The monoclonal anti-cytokeratin-FITC (MACF) antibody was immobilized on the modified SiN surfaces. The modified surfaces were characterized by water contact angle measurements, atomic force microscopy and fluorescence microscopy. The FITC-fluorescent label indicated the existence of MACF antibody on the SiN surfaces and the efficiency of the silanization reaction. Absorption of APTES and GOPES on the oxidized SiN surfaces was computationally modeled and calculated by Materials Studio software. The computational and experimental results showed that modification of the SiN surfaces with APTES and GTA was more effective than the modification with GOPES.

  9. Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Navarro-Urrios, D., E-mail: daniel.navarrourrios@nano.cnr.it [NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa I-56127 (Italy); Ramírez, J. M.; Berencén, Y.; Garrido, B. [Departament d' Electrònica, Universitat de Barcelona, Barcelona 08028 (Spain); Capuj, N. E. [Depto. Física, Universidad de la Laguna, 38206, La Laguna (Spain); Tredicucci, A. [NEST, Istituto Nanoscienze and Dipartimento di Fisica, Università di Pisa, Largo Pontecorvo 3, Pisa I-56127 (Italy)

    2015-09-07

    We demonstrate the integration of Nd{sup 3+} doped barium-titanium-silicate microsphere lasers with a silicon nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity = 0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On the contrary, we show that the absence of a planarization step strongly damages the microsphere lasing performance in the standard configuration.

  10. Effect of cyclic loading on the creep performance of silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Kirkland, T.P. [Oak Ridge National Lab., TN (United States). High Temperature Materials Lab.; Lin, C.K.J. [National Central Univ., Chung-Li (Taiwan, Province of China). Dept. of Mechanical Engineering

    1995-04-01

    Tension-tension cyclic fatigue tests (triangular waveform, {sigma}{sub max} = 100 MPa, R = 0.1) were conducted on hot isostatically pressed (HIPed) silicon nitride at frequencies spanning several orders of magnitude (5.6 {times} 10{sup {minus}6} to 0.1 Hz or 10{sup {minus}3} MPa/s to 18 MPa/s) at 1,370 C in air. The amount of cyclic creep strain was found to be a function of the frequency or stressing rate with greater strains to failure observed as the frequency or stressing rate decreased. The total strain was viewed as the sum of elastic, anelastic (or transient recoverable), and plastic (viscous or non-recoverable) strain contributions, after the empirical Pao and Marin model. The plastic strain was found to be the dominant component of the total creep and was unsatisfactorily represented by the Pao and Marin model. To circumvent this, a time exponent was introduced in the plastic strain term in the Pao and Marin model. This modification resulted in good correlation between model and experiment at the slower frequencies examined but over-predicted the cyclic creep strain at the faster frequencies. The utility of using the modified Pao and Marin model to predict cyclic creep response from static creep and strain relaxation tests is described.

  11. DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures

    Science.gov (United States)

    Mosca, R.; Gombia, E.; Passaseo, A.; Tasco, V.; Peroni, M.; Romanini, P.

    2004-10-01

    Passivating the ungated surface of AlGaN/GaN HEMTs with silicon nitride (SiN) is effective in improving the microwave output power performances of these devices. However, very little information is available about surface states in GaN-based HEMTs after SiN passivation. In this work we investigate AlGaN/GaN HEMTs structures having either metal-semiconductor or metal-SiN-semiconductor gate contacts. In short gate devices conductance DLTS measurements point out a hole-like peak that shows an anomalous behaviour and can be ascribed to surface states in the access regions of the device. In insulated gate HEMTs a band of levels is detected and ascribed to surface states, whose energy ranges from 0.14 to 0.43 eV. Capacitance-voltage measurements allow us to point out the existence of a second band of interface states deeper in energy than the former one. This band is responsible for slow transients observed in the characteristics of the insulated gate FAT-HEMT.

  12. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  13. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    Science.gov (United States)

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-01

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

  14. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    Science.gov (United States)

    Mazzillo, M.; Sciuto, A.; Mannino, G.; Renna, L.; Costa, N.; Badalà, P.

    2016-10-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320-400 nm) and UV-B (290-320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  15. Efficient continuous-wave nonlinear frequency conversion in high-Q Gallium Nitride photonic crystal cavities on Silicon

    CERN Document Server

    Mohamed, Mohamed Sabry; Carlin, Jean-François; Minkov, Momchil; Gerace, Dario; Savona, Vincenzo; Grandjean, Nicolas; Galli, Matteo; Houdré, Romuald

    2016-01-01

    We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4$\\times10^{4}$, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving normalized conversion efficiency of 2.4$\\times10^{-3}$ $W^{-1}$, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  16. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  17. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D. [Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Ha, Jong-Yoon; Krylyuk, S. [Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Davydov, A. V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  18. Task 6.6 - Sialon Coatings for Alkali-Resistant Silicon Nitride: Semi-annual report, July 1-December 31, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Nowok, J.W.

    1997-12-31

    The efficiency of a gas turbine can be improved by increasing operating temperature. Construction materials should meet both high strength requirements and hot-alkali corrosion resistance. Structural ceramics based on silicon nitride are promising candidates for high temperature engineering applications because of their high strength and good resistance to corrosion. Their performance varies significantly with the mechanical properties of boundary phases which, in turn, depend on their chemical composition, thickness of the amorphous phase, and the deformation process. To make silicon nitride ceramics tough, SiAlON ceramics were developed with controlled crystallization of the amorphous grain boundary phase. Crystallization of the grain boundary glass improves the high temperature mechanical properties of silicon nitride ceramics.

  19. Design of a polymer-filled silicon nitride strip/slot asymmetric hybrid waveguide for realizing both flat dispersion and athermal operation.

    Science.gov (United States)

    Bian, Dandan; Chen, Shaowu; Lei, Xun; Qin, Guanshi; Chen, Zhanguo

    2016-06-20

    An asymmetric strip/slot hybrid silicon nitride waveguide is designed to simultaneously realize athermal operation and flat dispersion. The slot filling and upper cladding materials are negative thermal-optical coefficient (TOC), low refractive index polyurethane acrylate, while the left and right cladding layers are positive TOC, high refractive index silicon nitride. With suitable waveguide parameter selection, an optimum strip/slot hybrid silicon nitride waveguide exhibits an effective TOC of 1.263×10-7/K at 1550 nm, flattened dispersion in the wavelength range from 1200 to 1800 nm with the maximum dispersion of 30.51 ps/(nm·km), and a minimum of 10.89 ps/(nm·km). The proposed hybrid waveguide has great potential in building up broadband athermal microresonator optical frequency combs.

  20. Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates.

    Science.gov (United States)

    Spee, D A; van der Werf, C H M; Rath, J K; Schropp, R E I

    2011-09-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 degrees C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si-H peak position of 2180 cm(-1) in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with a refractive index of 1.97 at a wavelength of 632 nm and an extinction coefficient of 0.002 at 400 nm, this suggests that a transparent high density silicon nitride material has been made below 110 degrees C, which is compatible with polymer films and is expected to have a high impermeability. To confirm the compatibility with polymer films a silicon nitride layer was deposited on poly(glycidyl methacrylate) made by initiated chemical vapour deposition, resulting in a highly transparent double layer.

  1. Influence of additives on anisotropic grain growth in silicon nitride ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Becher, P.F. [Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States)]. E-mail: becherpf@ornl.gov; Painter, G.S. [Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States); Shibata, N. [Institute for Engineering Innovation, University of Tokyo, Tokyo (Japan); Satet, R.L. [Institute for Ceramics in Mechanical Engineering, University of Karlsruhe, Karlsruhe (Germany); Hoffmann, M.J. [Institute for Ceramics in Mechanical Engineering, University of Karlsruhe, Karlsruhe (Germany); Pennycook, S.J. [Condensed Matter Science Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2006-04-25

    Tailoring microstructure and composition are critical components for obtaining high-performance silicon nitride (Si{sub 3}N{sub 4}) ceramics. Anisotropic growth behavior of Si{sub 3}N{sub 4} grains can be used to form very elongated grains, which serve to reinforce the matrix analogous to whisker-reinforcement of ceramics. The Si{sub 3}N{sub 4} grain morphology is known to be very sensitive to the particular additive used, especially in the case of the oxides of the rare earths (RE) and Group III elements. However, the atomistic mechanisms by which this occurs has not been understood until now. A first-principles model, the differential binding energy, has been developed to characterize the competition between RE and Si for migrating to the {beta}-Si{sub 3}N{sub 4} grain surfaces. The theory predicts that, of the RE, La should have the strongest and Lu the weakest preferential segregation to the grain surfaces. Additional calculations define the adsorption sites and their binding strengths for each of the REs on the prismatic plane of the Si{sub 3}N{sub 4} grains. These predictions are confirmed by unique atomic-resolution images obtained by aberration-corrected Z-contrast scanning transmission electron microscopy (STEM). The combined theoretical and STEM studies reveal that the elements that induce the greatest observed grain anisotropy are those with the strongest preferential segregation plus high binding strength to the prismatic grain surface. Advances now allow one to use first principles calculations to determine the chemical affinity and bonding of the rare earths, as well as other elements, at the grain interfaces; atomistic factors that actually control the growth anisotropy as opposed to the commonly considered ion size, which at best, only provides a trend.

  2. Environmentally Assisted Cracking in Silicon Nitride Barrier Films on Poly(ethylene terephthalate) Substrates.

    Science.gov (United States)

    Kim, Kyungjin; Luo, Hao; Singh, Ankit K; Zhu, Ting; Graham, Samuel; Pierron, Olivier N

    2016-10-03

    A singular critical onset strain value has been used to characterize the strain limits of barrier films used in flexible electronics. However, such metrics do not account for time-dependent or environmentally assisted cracking, which can be critical in determining the overall reliability of these thin-film coatings. In this work, the time-dependent channel crack growth behavior of silicon nitride barrier films on poly(ethylene terephthalate) (PET) substrates is investigated in dry and humid environments by tensile tests with in situ optical microscopy and numerical models. The results reveal the occurrence of environmentally assisted crack growth at strains well below the critical onset crack strain and in the absence of polymer-relaxation-assisted, time-dependent crack growth. The crack growth rates in laboratory air are about 1 order of magnitude larger than those tested in dry environments (dry air or dry nitrogen). In laboratory air, crack growth rates increase from ∼200 nm/s to 60 μm/s for applied stress intensity factors, K, ranging from 1.0 to 1.4 MPa·m(1/2), below the measured fracture toughness Kc of 1.8 MPa·m(1/2). The crack growth rates in dry environments were also strongly dependent on the prior storage of the specimens, with larger rates for specimens exposed to laboratory air (and therefore moisture) prior to testing compared to specimens stored in a dry environment. This behavior is attributed to moisture-assisted cracking, with a measured power law exponent of ∼22 in laboratory air. This study also reveals that much larger densities of channel cracks develop in the humid environment, suggesting an easier initiation of channel cracks in the presence of water vapor. The results obtained in this work are critical to address the time-dependent and environmental reliability issues of thin brittle barriers on PET substrates for flexible electronics applications.

  3. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides

    Energy Technology Data Exchange (ETDEWEB)

    Ciniculk, M.K. (California Univ., Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering)

    1991-08-01

    The processing-microstructure-property relations of silicon nitride ceramics sintered with rare-earth oxide additives have been investigated with the aim of improving their high-temperature behavior. The additions of the oxides of Y, Sm, Gd, Dy, Er, or Yb were compositionally controlled to tailor the intergranular phase. The resulting microstructure consisted of {beta}-Si{sub 3}N{sub 4} grains and a crystalline secondary phase of RE{sub 2}Si{sub 2}O{sub 7}, with a thin residual amorphous phase present at grain boundaries. The lanthanide oxides were found to be as effective as Y{sub 2}O{sub 3} in densifying Si{sub 3}N{sub 4}, resulting in identical microstructures. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a residual amorphous, observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification. The low resistance to oxidation of these materials was attributed to the minimization of amorphous phases via devitrification to disilicates, compatible with SiO{sub 2}, the oxidation product of Si{sub 3}N{sub 4}. The strength retention of these materials at 1300{degrees}C was found to be between 80% and 91% of room-temperature strength, due to crystallization of the secondary phase and a residual but refractory amorphous grain-boundary phase. The creep behavior was found to be strongly dependent on residual amorphous phase viscosity as well as on the oxidation behavior, as evidenced by the nonsteady-state creep rates of all materials. 122 refs., 51 figs., 12 tabs.

  4. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  5. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  6. Experimental observation of optical bandgaps for surface electromagnetic waves in a periodically corrugated one-dimensional silicon nitride photonic crystal.

    Science.gov (United States)

    Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Michelotti, Francesco

    2008-02-01

    Dispersion curves of surface electromagnetic waves (SEWs) in 1D silicon nitride photonic crystals having periodic surface corrugations are considered. We experimentally demonstrate that a bandgap for SEWs can be obtained by fabricating a polymeric grating on the multilayered structure. Close to the boundary of the first Brillouin zone connected to the grating, we observe the splitting of the SEW dispersion curve into two separate branches and identify two regions of very low group velocity. The proper design of the structure allows the two folded branches to lie beyond the light line in a wide spectral range, thus doubling the density of modes available for SEWs and avoiding light scattering.

  7. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  8. Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

    Science.gov (United States)

    Dreyer, M.; Wiesendanger, R.

    1995-10-01

    We have combined a home-built capacitance sensor with a commercial scanning force microscope to obtain a Scanning Capacitance Microscope (SCM). The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology. Charge writing and reading on a submicrometer scale is demonstrated with our SCM setup. In addition, SCM appears to be very useful for the characterization of subsurface defects in semiconductor devices which are inaccessible by most of the other scanning probe microscopies. Finally, we introduce a novel spectroscopic mode of SCM operation which offers combined voltage-dependent and spatially resolved information about inhomogeneous charge distributions in semiconductor devices.

  9. Dense-plasma-driven ultrafast formation of FePt organization on silicon substrate

    Indian Academy of Sciences (India)

    ROHIT MEDWAL; NEERU SEHDEV; WANG YING; R S RAWAT; S ANNAPOORNI

    2017-02-01

    This article demonstrates the removal of organic capping and promotion of long-range 2D organization of chemically synthesized FePt nanoparticles dispersed on Si$\\langle 100\\rangle$ substrate by means of pulsed H+ energetic ion irradiation using a dense plasma focus (DPF) device. The irradiation of energetic H$^+$ ions on FePt nanoparticles clearly resulted in enhanced structural and magnetic behaviour of the FePt nanoparticles as a function ofplasma focused irradiation shots. Transmission electron microscopy (TEM)/scanning electron microscopy (SEM) images of the FePt nanoparticles clearly show a marked enhancement in average particle size from 2.5 nm for nonirradiated sample to about 28nm for four plasma focus shots irradiation. The gradual removal of organic capping over chemically synthesized FePt nanoparticles with increasing plasma focus shots exposure is confirmed usingRaman spectroscopy. A uniform 2D organization of bimetallic FePt nanoparticles over 1 cm $\\times$ 1 cm silicon substrate is obtained with three plasma focus shots with better magnetic properties as compared with plasma-untreated FePtnanoparticles.

  10. Deposition of silicon nitride thin films by hot-wire CVD at 100 {sup o}C and 250 {sup o}C

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P., E-mail: palpuim@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Goncalves, L.M. [Departamento de Electronica Industrial, Universidade do Minho, 4800-058 Guimaraes (Portugal); Marins, E.S. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Viseu, T.M.R. [Departamento de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Ferdov, S. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Bouree, J.E. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France)

    2009-04-30

    Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 A/s) and at low substrate temperature. Films were deposited using NH{sub 3}/SiH{sub 4} flow rate ratios between 1 and 70 and substrate temperatures of 100 {sup o}C and 250 {sup o}C. For NH{sub 3}/SiH{sub 4} ratios between 40 and 70, highly transparent (T {approx} 90%), dense films (2.56-2.74 g/cm{sup 3}) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 A/s and < 0.5 A/s were obtained for films deposited at 100 {sup o}C and 250 {sup o}C, respectively. Films deposited at both substrate temperatures showed electrical conductivity {approx} 10{sup -14} {Omega}{sup -1} cm{sup -1} and breakdown fields > 10 MV cm{sup -1}.

  11. Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

    Science.gov (United States)

    Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-10-01

    MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented.

  12. Low Loss Electro-Optic Polymer Based Fast Adaptive Phase Shifters Realized in Silicon Nitride and Oxynitride Waveguide Technology

    Directory of Open Access Journals (Sweden)

    Lars Baudzus

    2016-08-01

    Full Text Available We present a comprehensive study on how to design and fabricate low loss electro-optic phase shifters based on an electro-optic polymer and the silicon nitride and silicon oxynitride waveguide material systems. The loss mechanisms of phase shifters with an electro-optic (EO polymer cladding are analyzed in detail and design solutions to achieve lowest losses are presented. In order to verify the low loss design a proof of concept prototype phase shifter was fabricated, which exhibits an attenuation of 0.8 dB/cm at 1550 nm and an electro-optic efficiency factor of 27%. Furthermore, the potential of this class of phase shifters is evaluated in numerical simulations, from which the optimal design parameters and achievable figures of merit were derived. The presented phase shifter design has its potential for application in fast adaptive multi stage devices for optical signal processing.

  13. Fabrication of a Carbon Nanotube-Embedded Silicon Nitride Membrane for Studies of Nanometer-Scale Mass Transport

    Energy Technology Data Exchange (ETDEWEB)

    Holt, J K; Noy, A; Huser, T; Eaglesham, D; Bakajin, O

    2004-08-25

    A membrane consisting of multiwall carbon nanotubes embedded in a silicon nitride matrix was fabricated for fluid mechanics studies on the nanometer scale. Characterization by tracer diffusion and scanning electron microscopy suggests that the membrane is free of large voids. An upper limit to the diffusive flux of D{sub 2}O of 2.4x10-{sup 8} mole/m{sup 2}-s was determined, indicating extremely slow transport. By contrast, hydrodynamic calculations of water flow across a nanotube membrane of similar specifications predict a much higher molar flux of 1.91 mole/m{sup 2}-s, suggesting that the nanotubes produced possess a 'bamboo' morphology. The carbon nanotube membranes were used to make nanoporous silicon nitride membranes, fabricated by sacrificial removal of the carbon. Nitrogen flow measurements on these structures give a membrane permeance of 4.7x10{sup -4} mole/m{sup 2}-s-Pa at a pore density of 4x10{sup 10} cm{sup -2}. Using a Knudsen diffusion model, the average pore size of this membrane is estimated to be 66 nm, which agrees well with TEM observations of the multiwall carbon nanotube outer diameter. These membranes are a robust platform for the study of confined molecular transport, with applications inseparations and chemical sensing.

  14. Effects of Phase Composition on Microstructure and Mechanical Properties of Lu2O3-doped Porous Silicon Nitride Ceramics

    Institute of Scientific and Technical Information of China (English)

    Quan Li; Xiaowei Yin

    2011-01-01

    Porous silicon nitride ceramics (Si3N4) were fabricated by pressureless sintering using different particle size of silicon nitride powder. Lu2O3 was used as sintering additive. According to phase relationships in the ternary system Si3N4-SiO2-Lu2O3, porous Si3N4 ceramics with different phase composition were designed through the change of the content of SiO2 which was formed by the oxidation at 800℃ in air. Porous Si3N4 with different phase compositions was obtained after sintering at 1800℃in N2atmosphere. A small content of SiO2 favored the formation of secondary phase Lu4Si2O7N2, while large content of SiO2 favored the formation of secondary phase Lu2Si2O7 and Si2N2O. Porous Si3N4 ceramics with secondary phase Lu4Si2O7N2 had a flexural strength of 207 MPa, while that with secondary phase Si2N2O and Lu2Si2O7 had lower flexural strength.

  15. Comparison of atomic force microscopy interaction forces between bacteria and silicon nitride substrata for three commonly used immobilization methods.

    Science.gov (United States)

    Vadillo-Rodríguez, Virginia; Busscher, Henk J; Norde, Willem; De Vries, Joop; Dijkstra, René J B; Stokroos, Ietse; Van Der Mei, Henny C

    2004-09-01

    Atomic force microscopy (AFM) has emerged as a powerful technique for mapping the surface morphology of biological specimens, including bacterial cells. Besides creating topographic images, AFM enables us to probe both physicochemical and mechanical properties of bacterial cell surfaces on a nanometer scale. For AFM, bacterial cells need to be firmly anchored to a substratum surface in order to withstand the friction forces from the silicon nitride tip. Different strategies for the immobilization of bacteria have been described in the literature. This paper compares AFM interaction forces obtained between Klebsiella terrigena and silicon nitride for three commonly used immobilization methods, i.e., mechanical trapping of bacteria in membrane filters, physical adsorption of negatively charged bacteria to a positively charged surface, and glutaraldehyde fixation of bacteria to the tip of the microscope. We have shown that different sample preparation techniques give rise to dissimilar interaction forces. Indeed, the physical adsorption of bacterial cells on modified substrata may promote structural rearrangements in bacterial cell surface structures, while glutaraldehyde treatment was shown to induce physicochemical and mechanical changes on bacterial cell surface properties. In general, mechanical trapping of single bacterial cells in filters appears to be the most reliable method for immobilization.

  16. A correlation between the virulence and the adhesion of Listeria monocytogenes to silicon nitride: an atomic force microscopy study.

    Science.gov (United States)

    Park, Bong-Jae; Haines, Travis; Abu-Lail, Nehal I

    2009-10-15

    Listeria monocytogenes is a facultative intracellular Gram-positive bacterium that is widely distributed in the environment. Despite being pathogenic at the species level, L. monocytogenes in fact comprises a diversity of strains from pathogenic ones that can result in disease and/or mortality to others that are relatively avirulent. The main goal of the current study was to answer the question on whether enhanced binding or attachment of L. monocytogenes to inert surfaces bears any relationship to pathogenicity in food-borne isolates. To answer this question, the nanoscale adhesion forces of eight L. monocytogenes strains that vary in their pathogenicity levels to a model surface of silicon nitride were quantified using atomic force microscopy. The strains used were the highly pathogenic (EGDe, 874, 1002, ATCC 19115), the intermediate pathogenic (ATCC 19112, ATCC 19118), and the non pathogenic (ATCC 15313 and HCC25). Our results indicate that the average nanoscale adhesion (in nN) and the 50% lethal dose (LD50) of strain virulence quantified in mice are logarithmically correlated according to: (nN)=-0.032ln(LD50)+1.040, r(2)=0.96. Such correlation indicates that nanoscale adhesion could potentially be used as a design criterion to distinguish between virulent and avirulent L. monocytogenes strains. Finally, stronger adhesion of virulent strains to inert surfaces modeled by silicon nitride might be a way for pathogenic strains to survive better in the environment and thus increase their likelihood of infecting animals or humans.

  17. Evaluation of quasi-static fracture characteristics considering surface conditions of silicon nitride for a space component

    Energy Technology Data Exchange (ETDEWEB)

    Kakimoto, Y; Kitazono, K [Tokyo Metropolitan University Department of Aerospace Engineering, Hino, Tokyo 191-0065 (Japan); Motoyashiki, Y; Sato, E, E-mail: kakimoto.yuuki@acjaxa.j [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (ISAS/JAXA), Sagamihara, Kanagawa 229-8510 (Japan)

    2010-07-01

    ISAS/JAXA is now planning to adopt a thruster made of monolithic silicon nitride (SN282 manufactured by Kyocera Co.) onto a Venus exploration probe, PLANET-C, in replacement of conventional niobium heat-resistant alloy. Silicon nitride is still brittle and requires precise analysis on multiaxial thermal stresses induced during firing, though it has high toughness among other structural ceramics. This study evaluated quasi-static fracture characteristics of SN282 considering the surface conditions through compression-torsion biaxial fracture tests as well as the conventional four-point-bending tests. The samples were applied to the mechanical tests either as-ground or after annealing at 1300{sup 0}C in air for 1 h, which formed an oxidation layer of more than 250nm on the specimen surface. Symmetry four-point-bending tests showed that annealing improves flexure strength and reduce the difference caused by grinding directions. Biaxial stress fracture tests showed the high compressive stress makes the influence of facial crack insensitive.

  18. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  19. Transmission electron microscopy study on silicon nitride/stainless steel bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Poza, P. [Departamento de Ciencia e Ingenieria de los Materiales, Universidad Rey Juan Carlos, 28933 Mostoles, Madrid (Spain); Miranzo, P. [Institute of Ceramics and Glass, CSIC, Campus de Cantoblanco, 28049 Madrid (Spain); Osendi, M.I. [Institute of Ceramics and Glass, CSIC, Campus de Cantoblanco, 28049 Madrid (Spain)], E-mail: miosendi@icv.csic.es

    2008-11-28

    The reaction zone of a diffusion bonded Si{sub 3}N{sub 4}/stainlees steel (ss) interface formed at 1100 deg. C was analyzed by transmission electron microscopy and X-ray diffraction (XRD). Besides the formation of various iron silicides, iron nitride and chromium nitride phases detected by XRD, Cr{sub 3}Ni{sub 5}Si{sub 2} crystals were identified at the interface by TEM.

  20. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  1. Influence of Cooling Channel Geometry on the Thermal Response in Silicon Nitride Plates Studied

    Science.gov (United States)

    Abdul-Aziz, Ali; Bhatt, Ramakrishna T.; Baaklini, George Y.

    2002-01-01

    Engine manufacturers are continually attempting to improve the performance and efficiency of internal combustion engines. Usually they raise the operating temperature or reduce the cooling air requirement for the hot section turbine components. However, the success of these attempts depends on finding materials that are lightweight, are strong, and can withstand high temperatures. Ceramics are among the top candidate materials considered for such harsh applications. They hold low-density, high-temperature strength, and thermal conductivity, and they are undergoing investigation as potential materials for replacing nickel-base alloys and superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass. The long-term objectives of the High Temperature Propulsion Components (HOTPC) Project are to develop manufacturing technology, thermal and environmental barrier coatings (TBC/EBC), and the analytical modeling capability to predict thermomechanical stresses in minimally cooled silicon nitride turbine nozzle vanes under simulated engine conditions. Two- and three-dimensional finite element analyses with TBC were conducted at the NASA Glenn Research Center. Nondestructive evaluation was used to determine processing defects. The study included conducting preliminary parametric analytical runs of heat transfer and stress analyses under steady-state conditions to demonstrate the feasibility of using cooled Si3N4 parts for turbine applications. The influence of cooling-channel shapes (such as circular, square, and ascending-order cooling channels) on cooling efficiency and thermal stresses was investigated. Temperature distributions were generated for all cases considered under both cooling and no-cooling conditions, with air being the cooling medium. The table shows the magnitude of the

  2. Silicon nitride based plasmonic components for CMOS back-end-of-line integration.

    Science.gov (United States)

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2013-10-07

    Silicon nitride waveguides provide low propagation loss but weak mode confinement due to the relatively small refractive index contrast between the Si₃N₄ core and the SiO2 cladding. On the other hand, metal-insulator-metal (MIM) plasmonic waveguides offer strong mode confinement but large propagation loss. In this work, MIM-like plasmonic waveguides and passive devices based on horizontal Cu-Si₃N₄-Cu or Cu-SiO₂-Si₃N₄-SiO₂-Cu structures are integrated in the conventional Si₃N₄ waveguide circuits using standard CMOS backend processes, and are characterized around 1550-nm telecom wavelengths using the conventional fiber-waveguide-fiber method. The Cu-Si₃N₄(~100 nm)-Cu devices exhibit ~0.78-dB/μm propagation loss for straight waveguides, ~38% coupling efficiency with the conventional 1-μm-wide Si₃N₄ waveguide through a 2-μm-long taper coupler, ~0.2-dB bending loss for sharp 90° bends, and ~0.1-dB excess loss for ultracompact 1 × 2 and 1 × 4 power splitters. Inserting a ~10-nm SiO₂ layer between the Si3N4 core and the Cu cover (i.e., the Cu-SiO2(~10 nm)-Si₃N₄(~100 nm)-SiO2(~10 nm)-Cu devices), the propagation loss and the coupling efficiency are improved to ~0.37 dB/μm and ~52% while the bending loss and the excess loss are degraded to ~3.2 dB and ~2.1 dB, respectively. These experimental results are roughly consistent with the numerical simulation results after taking the influence of possible imperfect fabrication into account. Ultracompact plasmonic ring resonators with 1-μm radius are demonstrated with an extinction ratio of ~18 dB and a quality factor of ~84, close to the theoretical prediction.

  3. Low Temperature Silicon Nitride by Hot Wire Chemical Vapour Deposition for the Use in Impermeable Thin Film Encapsulation on Flexible Substrates

    NARCIS (Netherlands)

    Spee, D.A.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si–H peak position of 2180 cm−1

  4. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  5. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  6. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing

    CERN Document Server

    Xiong, Chi; Tang, Hong X

    2014-01-01

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1100 nm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultra-wide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic ...

  7. Fabrication and characterization of high performance AIGaN/GaN HEMTs on sapphire with silicon nitride passivation

    Institute of Scientific and Technical Information of China (English)

    Zhang Renping; Yan Wei; Wang Xiaoliang; Yang Fuhua

    2011-01-01

    AIGaN/GaN high electron mobility transistors (HEMTs) with high performance were fabricated and characterized. A variety of techniques were used to improve device performance, such as AIN interlayer, silicon nitride passivation, high aspect ratio T-shaped gate, Iow resistance ohmic contact and short drain-source distance.DC and RF performances of as-fabricated HEMTs were characterized by utilizing a semiconductor characterization system and a vector network analyzer, respectively. As-fabricated devices exhibited a maximum drain current density of 1.41 A/mm and a maximum peak extrinsic transconductance of 317 mS/mm. The obtained current density is larger than those reported in the literature to date, implemented with a domestic wafer and processes. Furthermore, a unity current gain cut-off frequency of 74.3 GHz and a maximum oscillation frequency of 112.4 GHz were obtained on a device with an 80 nm gate length.

  8. Preparation and Application of Silicon Nitride Ceramics%氮化硅陶瓷的制备与应用

    Institute of Scientific and Technical Information of China (English)

    孙亚光; 贺胜利; 刘荣安; 金昊; 杨文龙; 张宇航

    2016-01-01

    论述了氮化硅陶瓷在航天军工、机械工程、超细研磨、轴承制造、汽车配件等领域的应用,对氮化硅陶瓷的生产技术发展与市场应用进行了分析,展望了我国氮化硅行业的发展方向。%The wide applications of silicon nitride ceramics to the aerospace and defense industry, mechanic engineering, superifne grinding, bearing manufacturing, automotive parts, etc are introduced, the development of their production technology and their market are analyzed, and their industrial trends are China are predicted.

  9. Optical trapping of microparticles using silicon nitride waveguide junctions and tapered-waveguide junctions on an optofluidic chip.

    Science.gov (United States)

    Cai, Hong; Poon, Andrew W

    2012-10-01

    We study optical trapping of microparticles on an optofluidic chip using silicon nitride waveguide junctions and tapered-waveguide junctions. We demonstrate the trapping of single 1 μm-sized polystyrene particles using the evanescent field of waveguide junctions connecting a submicrometer-sized input-waveguide and a micrometer-sized output-waveguide. Particle trapping is localized in the vicinity of the junction. We also demonstrate trapping of one and two 1μm-sized polystyrene particles using tapered-waveguide junctions connecting a submicrometer-sized singlemode input-waveguide and a micrometer-sized multimode output-waveguide. Particle trapping occurs near the taper output end, the taper center and the taper input end, depending on the taper aspect ratio.

  10. Quasi-phase-matched second harmonic generation in silicon nitride ring resonators controlled by static electric field.

    Science.gov (United States)

    de Oliveira, Rafael E P; de Matos, Christiano J S

    2013-12-30

    Actively-controlled second harmonic generation in a silicon nitride ring resonator is proposed and simulated. The ring was designed to resonate at both pump and second harmonic wavelengths and quasi-phase-matched frequency conversion is induced by a periodic static electric field generated by voltage applied to electrodes arranged along the ring. Nonlinear propagation simulations were undertaken and an efficiency of -21.67 dB was calculated for 60 mW of pump power at 1550 nm and for a 30V applied voltage, which compares favorably with demonstrated all-optical second harmonic generation in integrated microresonators. Transient effects were also evaluated. The proposed design can be exploited for the construction of electro-optical devices based on nonlinear effects in CMOS compatible circuits.

  11. Effects of precoating and calcination on microstructure of 3D silica fiber reinforced silicon nitride based composites

    Institute of Scientific and Technical Information of China (English)

    QI Gong-jin; ZHANG Chang-rui; HU Hai-feng

    2006-01-01

    Three-dimensional silica fiber reinforced silicon nitride based composites were fabricated by preceramic polymer infiltration and pyrolysis method using perhydropolysilazane as a precursor. The effects of precoating and high temperature calcination on the microstructures of the composites were investigated by scanning electron microscopy. For the composite without a precoating, the fracture surface is plain, and the fiber/matrix interfaces become very unclear after calcination at 1 600 ℃ due to intense interfacial reactions. The composite with a precoating shows tough fracture surface with distinct fiber pull-outs, and the fiber/matrix interfaces are still clear after calcination at 1 600 ℃. It is the appropriate precoating process that contributes to the good interfacial microstructures for the composite.

  12. Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

    Science.gov (United States)

    2007-12-01

    important to minimize imperfections and defects as well as the amount of unwanted impurities. The most common bulk method is the Czochralski Method , in...demonstrates a method for producing highly conductive Si- implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive...54 IV. Experimental Method ..................................................................................... 57 Sample

  13. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  14. Hard carbon nitride and method for preparing same

    Science.gov (United States)

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  15. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots

    Science.gov (United States)

    Liu, Jia; Liu, Bin; Zhang, Xisheng; Guo, Xiaojia; (Frank Liu, Shengzhong

    2017-07-01

    Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm-1) and carrier concentration (2.41 × 1019 cm-3) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.

  16. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  17. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Da; Kunz, Thomas [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Wolf, Nadine [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Energy Efficiency, Am Galgenberg 87, 97074 Wuerzburg (Germany); Liebig, Jan Philipp [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Göken, Mathias [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Brabec, Christoph J. [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Institute of Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen (Germany)

    2015-05-29

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm{sup 2} aperture area on the graphite substrate. The optical properties of the SiN{sub x}/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN{sub x}/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN{sub x}/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance.

  18. Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride

    Science.gov (United States)

    Barradas, N. P.; Bergmaier, A.; Mizohata, K.; Msimanga, M.; Räisänen, J.; Sajavaara, T.; Simon, A.

    2015-10-01

    Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si3N4, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the ions involved, which in the case of HI-ERDA is both the primary beam, and the recoiled species. We measured the stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in a well-characterised silicon nitride membrane. The measurements were made by independent groups utilising different experimental setups and methods. In some cases there is extensive overlap of the energy range in different experiments, allowing a comparison of the different results. The four independent data sets reported in this work are in excellent agreement with each other, in the cases where similar energy ranges were measured. On the other hand, the data are in most cases higher than calculations made with the interpolative schemes SRIM and MSTAR together with the Bragg rule. Better agreement is found with MSTAR in some of the cases studied. This work is a significant extension of the heavy ion stopping power data base for silicon nitride.

  19. Study of selective chemical downstream plasma etching of silicon nitride and silicon oxide for advanced patterning applications

    Science.gov (United States)

    Prévost, Emilie; Cunge, Gilles; De-Buttet, Côme; Lagrasta, Sebastien; Vallier, Laurent; Petit-Etienne, Camille

    2017-03-01

    The evolution of integrated components in the semiconductors industry is nowadays looking for ultra-high selective etching processes in order to etch high aspect ratio structures in complicated stacks of ultrathin layers. For ultra-high selective processes, typical plasma etching show limitations, while wet etching processes reach limitations due to capillary forces. For these reasons there is a great regain of interest today in chemical downstream etching systems (CDE), which combine the advantages of plasma and wet treatments. The absence of photons and ions allow to minimize damages and to achieve very high selectivity (in isotropic etching). In this work we investigated the parameters enabling to etch selectively the Si3N4 to the SiO2 by CDE. We shown that the correlation between the gas mixture and the wafer temperature is the key to obtain the desired selectivity. In order to optimize the processing window, the mixture composition (NF3/N2/O2/He) and the temperatures were screened by several DOE (Designs Of Experiments). Conditions are found in which the etching selectivity between the two silicon alloys is higher than 100, which allowed us to clean out sacrificial Si3N4 layers in very high aspect ratio (about 100) silicon trenches of nanometric size (60nm) without damaging the 10nm thin SiO2 caping layer (between the Si and the Si3N4). This demonstrates that downstream plasma etching can perform better than wet treatments in this case.

  20. Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite

    Indian Academy of Sciences (India)

    J Rakshit; P K Das

    2002-10-01

    Four compositions of nitride bonded SiC were fabricated with varying particle size of SiC of ∼ 9.67, ∼ 13.79, ∼ 60 and their mixture with Si of ∼ 4.83 particle size. The green density and hence the open porosity of the shapes were varied between 1.83 to 2.09 g/cc and 33.3 to 26.8 vol.%, respectively. The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural strength of the composite of all compositions increased at 1200 and 1300°C because of oxidation of Si3N4 phase and blunting crack front. Formation of Si3N4 whisker was also observed. The strength of the mixture composition was maximum.

  1. RF power control for fabricating amorphous silicon nitride without Si-nanocrystals and its effect on defects and luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Seunghun [Department of Physics, University of Seoul, Seoul 130-743 (Korea, Republic of); Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Han, Moonsup, E-mail: mhan@uos.ac.kr [Department of Physics, University of Seoul, Seoul 130-743 (Korea, Republic of)

    2014-11-25

    Highlights: • We fabricated a-SiN{sub x} without Si-nanocrystals by using PECVD. • We investigated comprehensively the defects in a-SiN{sub x} and the relation between their defects and PL by providing energy-level diagram. • We succeeded to tune efficiently the whole range of visible luminescence with one system based material. • We conclude that RF power-control provides an efficient way to tune the color. - Abstract: We studied defect and luminescence properties of amorphous silicon nitride (a-SiN{sub x}) without silicon nanocrystals (Si-NC) fabricated by plasma-enhanced chemical vapor deposition under a controlled radio-frequency (RF) power with subsequent post-annealing. The photoluminescence (PL) intensity became stronger and the central PL peak position shifted from 2.85 eV to 1.35 eV as the applied RF power decreased from 100 W to 60 W. Through the analyses of the PL and the photoluminescence excitation (PLE) spectra we classified different kinds of defect states that each sample contains. On the basis of a further analysis of the chemical states of the Si 2p and the N 1s core-levels by X-ray photoelectron spectroscopy, we discuss the reason that the 60 W sample contains more defect states than other samples and clarify the origin of the strong luminescence observed in the 60 W sample without Si-NC fabricated at relatively low RF power. In addition, this work shows also that the RF power control could provide an efficient way to select a color or all colors for the display devices by tuning the various kinds of defects in a-SiN{sub x} thin films.

  2. Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

    Energy Technology Data Exchange (ETDEWEB)

    Yeo, Reuben J.; Dwivedi, Neeraj; Bhatia, Charanjit S., E-mail: elebcs@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore 117583 (Singapore); Zhang, Lu [Institute of Microelectronics (IME), A*STAR (Agency for Science, Technology, and Research), 11 Science Park Road, Singapore Science Park II, Singapore, Singapore 117685 (Singapore); Zhang, Zheng; Tripathy, S. [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore, Singapore 117602 (Singapore); Lim, Christina Y. H. [Department of Mechanical Engineering, National University of Singapore, Singapore, Singapore 117575 (Singapore)

    2015-01-28

    Pole tip recession (PTR) is one of the major issues faced in magnetic tape storage technology, which causes an increase in the magnetic spacing and hence signal loss during data readback. Despite efforts to reduce the magnetic spacing, PTR, and surface wear on the heads by using protective overcoats, most of them either employ complex fabrication processes and approaches do not provide adequate protection to the head or are too thick (∼10–20 nm), especially for future high density tape storage. In this work, we discuss an approach to reduce the PTR and surface wear at the head by developing an ultrathin ∼7 nm bilayer overcoat of silicon/silicon nitride (Si/SiN{sub x}) and carbon (C), which is totally fabricated by a cost-effective and industrial-friendly magnetron sputtering process. When compared with a monolithic C overcoat of similar thickness, the electrically insulating Si/SiN{sub x}/C bilayer overcoat was found to provide better wear protection for commercial tape heads, as demonstrated by Auger electron spectroscopic analyses after wear tests with commercial tape media. Although the microstructures of carbon in the monolithic and bilayer overcoats were similar, the improved wear durability of the bilayer overcoat was attributed to the creation of extensive interfacial bonding of Si and N with the C overcoat and the alumina-titanium carbide composite head substrate, as predicted by time-of-flight secondary ion mass spectrometry and confirmed by in-depth X-ray photoelectron spectroscopy analyses. This study highlights the pivotal role of enhanced interfaces and interfacial bonding in developing ultrathin yet wear-durable overcoats for tape heads.

  3. Percent {alpha} and {beta} phases present in the silicon nitride powder produced through intermediary silicon di imide; Estudo da porcentagem de fases {alpha} e {beta} presentes no po de nitreto de silicio produzido via intermediario diimida de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Cavalcanti, Celso Berilo Cidade; Piorino Neto, Francisco; Shibuya, Hissao; Silva, Vitor Alexandre da; Silva, Cosme Roberto Moreira da [Centro Tecnico Aeroespacial, Sao Jose dos Campos, SP (Brazil). Inst. de Aeronautica e Espaco

    1995-12-31

    Ceramic powder must have appropriated characteristics which allow good mechanical final properties of the sintered material. The {alpha}/{beta} relationship on the starting powders is very important when we want to improve the fracture toughness. The present work evaluates the phase relationships on silicon nitride powder, produced by ammonolysis of silicon tetrachloride, by imide step, with variation of temperature and time of dimide pyrolysis. The synthesis condition was monitored and the existing {beta}-phases for the used conditions remained between 15 and 25%. (author) 1 tab.

  4. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  5. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  6. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  7. The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Verlaan, V.; Verkerk, A.D.; Arnoldbik, W.M.; Van der Werf, C.H.M.; Bakker, R.; Houweling, Z.S.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht (Netherlands); Romijn, I.G.; Borsa, D.M.; Weeber, A.W. [ECN Solar Energy, Petten (Netherlands); Luxembourg, S.L.; Zeman, M. [DIMES, Delft University of Technology, Delf (Netherlands); Dekkers, H.F.W. [IMEC, Leuven (Belgium)

    2009-04-15

    Silicon nitride (SiNx) is a material with many applications and can be deposited with various deposition techniques. Series of SiNx films were deposited with HWCVD, RF PECVD,MWPECVD and LF PECVD. The atomic densities are quantified using RBS and ERD. The influence of the atomic densities on the Si-N and Si-Si bond structure is studied. The density of N-N bonds is found to be negligible. New Si-N FTIR proportionality factors are determined which increase with increasing N/Si ratio from 1.2 x 10{sup 19} cm-1 for Si rich films (N/Si=0.2) to 2.4 x 10{sup 19}cm-1 for N rich films (N/Si=1.5). The peak position of the Si-H stretching mode in the FTIR spectrum is discussed using the chemical induction model. It is shown that especially for Si-rich films the hydrogen content affects the Si-H peak position. The influence of the composition on the refractive index of the films is discussed on the basis of the Lorentz-Lorenz equation and the Kramers-Kronig relation. The decreasing refractive index with increasing N/Si ratio is primarily caused by an increase of the band gap.

  8. Pressure Sensing in High-Refractive-Index Liquids Using Long-Period Gratings Nanocoated with Silicon Nitride

    Directory of Open Access Journals (Sweden)

    Jiahua Chen

    2010-12-01

    Full Text Available The paper presents a novel pressure sensor based on a silicon nitride (SiNx nanocoated long-period grating (LPG. The high-temperature, radio-frequency plasma-enhanced chemical-vapor-deposited (RF PECVD SiNx nanocoating was applied to tune the sensitivity of the LPG to the external refractive index. The technique allows for deposition of good quality, hard and wear-resistant nanofilms as required for optical sensors. Thanks to the SiNx nanocoating it is possible to overcome a limitation of working in the external-refractive-index range, which for a bare fiber cannot be close to that of the cladding. The nanocoated LPG-based sensing structure we developed is functional in high-refractive-index liquids (nD > 1.46 such as oil or gasoline, with pressure sensitivity as high as when water is used as a working liquid. The nanocoating developed for this experiment not only has the highest refractive index ever achieved in LPGs (n > 2.2 at λ = 1,550 nm, but is also the thinnest (

  9. Formation of Silicon/Carbon Core-Shell Nanowires Using Carbon Nitride Nanorods Template and Gold Catalyst

    Directory of Open Access Journals (Sweden)

    Ilyani Putri Jamal

    2013-01-01

    Full Text Available In this experiment, silicon/carbon (Si/C core-shell nanowires (NWs were synthesized using gold nanoparticles (Au NPs coated carbon nitride nanorods (CN NRs as a template. To begin with, the Au NPs coated CN NRs were prepared by using plasma-enhanced chemical vapor deposition assisted with hot-wire evaporation technique. Fourier transform infrared spectrum confirms the C–N bonding of the CN NRs, while X-ray diffraction pattern indicates the crystalline structure of the Au NPs and amorphous structure of the CN NRs. The Au NPs coated CN NRs were thermally annealed at temperature of 800°C in nitrogen ambient for one hour to induce the growth of Si/C core-shell NWs. The growth mechanism for the Si/C core-shell NWs is related to the nitrogen evolution and solid-liquid-solid growth process which is a result of the thermal annealing. The formation of Si/C core-shell NWs is confirmed by electron spectroscopic imaging analysis.

  10. Fabrication of Silicon Nitride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization

    Directory of Open Access Journals (Sweden)

    U. Hashim

    2013-01-01

    Full Text Available The fabrication of ion sensitive field-effect transistor (ISFET using silicon nitride (Si3N4 as the sensing membrane for pH measurement and DNA is reported. For the pH measurement, the Ag/AgCl electrode was used as the reference electrode, and different pH values of buffer solution were used in the ISFET analysis. The ISFET device was tested with pH buffer solutions of pH2, pH3, pH7, pH8, and pH9. The results show that the IV characteristic of ISFET devices is directly proportional and the device’s sensitivity was 43.13 mV/pH. The ISFET is modified chemically to allow the integration with biological element to form a biologically active field-effect transistor (BIOFET. It was found that the DNA immobilization activities which occurred on the sensing membrane caused the drain current to drop due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The drain current was further decreased when the DNA hybridization took place.

  11. Formation of ion tracks in amorphous silicon nitride films with MeV C{sub 60} ions

    Energy Technology Data Exchange (ETDEWEB)

    Kitayama, T.; Morita, Y.; Nakajima, K. [Department of Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan); Narumi, K.; Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Matsuda, M.; Sataka, M. [Nuclear Science Research Institute, Japan Atomic Energy Agency, Tokai, Naka, Ibaraki 319-1195 (Japan); Tsujimoto, M.; Isoda, S. [Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501 (Japan); Toulemonde, M. [CIMAP-GANIL (CEA-CNRS-ENSICAEN-Université de Caen Basse Normandie), Bd. H. Becquerel, 14070 Caen (France); Kimura, K., E-mail: kimura@kues.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan)

    2015-08-01

    Amorphous silicon nitride (a-SiN) films (thickness 5–100 nm) were irradiated with 0.12–5 MeV C{sub 60}, 100 MeV Xe, 200 MeV Kr, and 200 and 420 MeV Au ions. Ion tracks were clearly observed using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) except for 100 MeV Xe and 200 MeV Kr. The observed HAADF-STEM images showed that the ion tracks consist of a low density core (0.5–2 nm in radius) and a high density shell (several nm in radius). The observed core and shell radii are not simply correlated with the electronic energy loss indicating that the nuclear energy loss plays an important role in the both core and shell formations. The observed track radii were well reproduced by the unified thermal spike model with two thresholds for shell and core formations.

  12. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Science.gov (United States)

    Knoops, Harm C. M.; de Peuter, K.; Kessels, W. M. M.

    2015-07-01

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called "redeposition effect". This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  13. Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films%a-SiNx∶H薄膜的导电机制

    Institute of Scientific and Technical Information of China (English)

    王燕; 岳瑞峰

    2001-01-01

    研究了a-SiNx∶H薄膜的电导激活能与氮含量的关系。结果表明,随氮含量增加,样品表现出两种并行的电导机制:欧姆机制与Poole-Frenkel机制。采用两种电导机制拟合电流随温度变化曲线后得到了不同氮含量样品的电导激活能。由于氮在非晶硅中为施主类杂质,且具有特殊的结构组态,因而提出了一种调制掺杂模型解释了实验现象。%Dependence of conductivity activated energy on nitrogen contents in amorphous hydrogenated silicon nitride (a-SiNx∶H)films was studied.The results show that both Ohmic mechanism and Poole-Frenkel mechanism are responsible for the variations in the conductivity activated energies.Temperature dependence of the current can be analytically evaluated by means of the two mechanisms and the conductivity activated energies can be calculated for samples with different nitrogen contents.Since nitrogen is a donor-type impurity with special stoichiometry in a-SiNx∶H,we propose a modulated doping model to understand the dependence of the conductivity activated energy on N contents.

  14. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  15. Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

    Science.gov (United States)

    Yukino, Ryoji; Sahoo, Pankaj K.; Sharma, Jaiyam; Takamura, Tsukasa; Joseph, Joby; Sandhu, Adarsh

    2017-01-01

    We describe wavelength tuning in a one dimensional (1D) silicon nitride nano-grating guided mode resonance (GMR) structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation) for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position over a wide range of wavelengths. We experimental demonstrate tuning over a range of 375 nm between 500 nm˜875 nm. We present a theoretical model to explain the resonance conditions observed in our experiments and predict the peak positions with show excellent agreement with experiments. Our method for tuning wavelengths is simpler and more efficient than conventional procedures that employ variations in the design parameters of structures or conical mounting of two-dimensional (2D) GMR structures and enables a single 1D GMR device to function as a high efficiency wavelength filter over a wide range of wavelengths. We expect tunable filters based on this technique to be applicable in a wide range of fields including astronomy and biomedical imaging.

  16. Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

    Directory of Open Access Journals (Sweden)

    Ryoji Yukino

    2017-01-01

    Full Text Available We describe wavelength tuning in a one dimensional (1D silicon nitride nano-grating guided mode resonance (GMR structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position over a wide range of wavelengths. We experimental demonstrate tuning over a range of 375 nm between 500 nm˜875 nm. We present a theoretical model to explain the resonance conditions observed in our experiments and predict the peak positions with show excellent agreement with experiments. Our method for tuning wavelengths is simpler and more efficient than conventional procedures that employ variations in the design parameters of structures or conical mounting of two-dimensional (2D GMR structures and enables a single 1D GMR device to function as a high efficiency wavelength filter over a wide range of wavelengths. We expect tunable filters based on this technique to be applicable in a wide range of fields including astronomy and biomedical imaging.

  17. The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films

    Science.gov (United States)

    Czarnacka, Karolina; Komarov, F. F.

    2016-09-01

    In this paper measurements results of electrical and optical properties of SiNx thin layers are presented. Layers were produced by chemical vapor deposition on n-type (100)-oriented silicon substrates. Measurements were performed for samples directly after deposition and for samples annealed in temperature of 1073 K. Resistance Rp, capacity Cp, phase angle shift θ and dielectric loss factor tgδ were the measuring parameters on AC in the frequency range from 50 Hz to 5 MHz as a function of measurement temperature from the range 20 K - 373 K. Based on this, the conductivity σ and the activation energy of conductivity were determined. Photoluminescence spectra were recorded at room temperature in the spectral region of 350 - 800 nm using a He-Cd laser source with λ=325 nm. The influence of annealing on the electrical and optical properties was explained. Current resonance phenomenon and reduction of photoluminescence spectra were observed.

  18. Consolidation of silicon nitride without additives. [for gas turbine engine efficiency increase

    Science.gov (United States)

    Sikora, P. F.; Yeh, H. C.

    1976-01-01

    The use of ceramics for gas turbine engine construction might make it possible to increase engine efficiency by raising operational temperatures to values beyond those which can be tolerated by metallic alloys. The most promising ceramics being investigated in this connection are Si3N4 and SiC. A description is presented of a study which had the objective to produce dense Si3N4. The two most common methods of consolidating Si3N4 currently being used include hot pressing and reaction sintering. The feasibility was explored of producing a sound, dense Si3N4 body without additives by means of conventional gas hot isostatic pressing techniques and an uncommon hydraulic hot isostatic pressing technique. It was found that Si3N4 can be densified without additions to a density which exceeds 95% of the theoretical value

  19. Titanium nitride as light trapping plasmonic material in silicon solar cell

    Science.gov (United States)

    Venugopal, N.; Gerasimov, V. S.; Ershov, A. E.; Karpov, S. V.; Polyutov, S. P.

    2017-10-01

    Light trapping is a crucial prominence to improve the efficiency in thin film solar cells. However, last few years, plasmonic based thin film solar cells shows potential structure to improve efficiency in photovoltaics. In order to achieve the high efficiency in plasmonic based thin film solar cells, traditionally noble metals like Silver (Ag) and Gold (Au) are extensively used due to their ability to localize the light in nanoscale structures. In this paper, we numerically demonstrated the absorption enhancement due to the incorporation of novel plasmonic TiN nanoparticles on thin film Silicon Solar cells. Absorption enhancement significantly affected by TiN plasmonic nanoparticles on thin film silicon was studied using Finite-Difference-Time-Domain Method (FDTD). The optimal absorption enhancement 1.2 was achieved for TiN nanoparticles with the diameter of 100 nm. The results show that the plasmonic effect significantly dominant to achieve maximum absorption enhancement g(λ) at longer wavelengths (red and near infrared) and as comparable with Au nanoparticle on thin film Silicon. The absorption enhancement can be tuned to the desired position of solar spectrum by adjusting the size of TiN nanoparticles. Effect of nanoparticle diameters on the absorption enhancement was also thoroughly analyzed. The numerically simulated results show that TiN can play the similar role as gold nanoparticles on thin film silicon solar cells. Furthermore, TiN plasmonic material is cheap, abundant and more Complementary Metal Oxide Semiconductor (CMOS) compatible material than traditional plasmonic metals like Ag and Au, which can be easy integration with other optoelectronic devices.

  20. Energy transfer phenomena and radiative processes in silicon nitride based materials for on-chip photonics applications

    Science.gov (United States)

    Li, Rui

    Rare-earth (RE) doping of silicon-based structures provides a valuable approach for light-emitting devices which could be monolithically integrated atop the widespread silicon electronics platform and enables inexpensive integration of on-chip optical components. However, the small excitable fraction of RE ions and the substantial free carrier losses in Si nanostructures severely limit the possibility to achieve net optical gain using traditional Er doped materials, such as Er doped Si-rich oxides (Er:SRO). On the other hand, a novel material platform based on RE-doped silicon nitride (RE:Six) materials has recently revealed unique advantages for on-chip light source. Based on a variety of light emission spectroscopic techniques and rate equation modeling, light emission and energy transfer phenomena were studied to quantitatively assess the benefits of the novel Er and Nd doped SiNx (Er: SiN x and Nd:SiNx) material platform compared to the standard Er:SRO. Efficient energy transfer and nanosecond-time dynamics from SiN x matrices to RE ions with two orders of magnitude larger coupling coefficient than Er:SRO were demonstrated for the first time. The origin of this energy transfer was shown to consist of non-resonant phonon-mediated coupling by temperature-dependent experiments. In addition, a tradeoff between excitation efficiency by energy transfer and emission efficiency, determined by excess Si concentration, was discovered and studied. Although carrier absorption and non-radiative recombination jeopardize the observation of optical gain, differential loss measurements under femtosecond pulsed excitation resulted in the bleaching of the Er ground state absorption by energy transfer in Er:SiN x materials, which bears great hope for the engineering of Si-based lasers. On the other hand, with a superior 4-level system, Nd:SiNx is promising to lase with a lower threshold. To make use of the better field confinement in SiNx due to its higher refractive index, RE

  1. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V

    2001-01-01

    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  2. Electrical and optical properties of silicon-doped gallium nitride polycrystalline films

    Indian Academy of Sciences (India)

    S R Bhattacharyya; A K Pal

    2008-02-01

    Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (ℎ-GaN) while films deposited at 623 K were predominantly cubic (-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott’s hopping for films containing -GaN while Efros and Shklovskii (E–S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing ℎ-GaN. A crossover from Mott’s hopping to E–S hopping in the `soft’ Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ∼ 2.73 eV to that for peak at ∼ 3.11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.

  3. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  4. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting.

    Science.gov (United States)

    Kim, Hoon-sik; Brueckner, Eric; Song, Jizhou; Li, Yuhang; Kim, Seok; Lu, Chaofeng; Sulkin, Joshua; Choquette, Kent; Huang, Yonggang; Nuzzo, Ralph G; Rogers, John A

    2011-06-21

    Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.

  5. Silicon surface and bulk defect passivation by low temperature PECVD oxides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.; Rohatgi, A. [Georgia Institute of Technology, Atlanta, GA (United States). Univ. Center of Excellence for Photovoltaics Research and Education; Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

    1995-01-01

    The effectiveness of PECVD passivation of surface and bulk defects in Si, as well as phosphorous diffused emitters, Is investigated and quantified. Significant hydrogen incorporation coupled with high positive charge density in the PECVD SiN layer is found to play an important role in bulk and surface passivation. It is shown that photo-assisted anneal in a forming gas ambient after PECVD depositions significantly improves the passivation of emitter and bulk defects. PECVD passivation of phosphorous doped emitters and boron doped bare Si surfaces is found to be a strong function of doping concentration. Surface recombination velocity of less than 200 cm/s for 0.2 Ohm-cm and less than 1 cm/s for high resistivity substrates ({approximately} Ohm-cm) were achieved. PECVD passivation improved bulk lifetime in the range of 30% to 70% in multicrystalline Si materials. However, the degree of the passivation was found to be highly material specific. Depending upon the passivation scheme, emitter saturation current density (J{sub oe}) can be reduced by a factor of 3 to 9. Finally, the stability of PECVD oxide/nitride passivation under prolonged UV exposure is established.

  6. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

    2016-04-14

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  7. Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

    Science.gov (United States)

    Wierer, Jonathan J., Jr.; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Vawter, Gregory A.; Montaño, Ines

    2015-06-01

    Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

  8. Active zinc-blende III-nitride photonic structures on silicon

    Science.gov (United States)

    Sergent, Sylvain; Kako, Satoshi; Bürger, Matthias; Blumenthal, Sarah; Iwamoto, Satoshi; As, Donat Josef; Arakawa, Yasuhiko

    2016-01-01

    We use a layer transfer method to fabricate free-standing photonic structures in a zinc-blende AlN epilayer grown by plasma-assisted molecular beam epitaxy on a 3C-SiC pseudosubstrate and containing GaN quantum dots. The method leads to the successful realization of microdisks, nanobeam photonic crystal cavities, and waveguides integrated on silicon (100) and operating at short wavelengths. We assess the quality of such photonic elements by micro-photoluminescence spectroscopy in the visible and ultraviolet ranges, and extract the absorption coefficient of ZB AlN membranes (α ˜ (2-5) × 102 cm-1).

  9. Liquid Phase Sintering (LPS) and Dielectric Constant of α-Silicon Nitride Ceramic

    Institute of Scientific and Technical Information of China (English)

    CHEN Changlian; CHEN Fei; SHEN Qiang; ZHANG Lianmeng; YAN Faqiang

    2006-01-01

    The spark plasma sintering (SPS) was applied to prepare α-Si3N4 ceramics of different densities with magnesia, silicon dioxide, alumina as the sintering aids. The mechanism of liquid phase sintering (LPS) was discussed and the factors influencing the density of the prepared samples were analyzed. The dielectric constant of sintered samples was tested. The experimental results show that the density can be controlled from 2.48 g/cm3 to 3.09 g/cm3 while the content of the sintering aids and the sintering temperature alter and the dielectric constant is closely dependent on the density of obtained samples.

  10. Effect of Silicon Nitride Incorporation on Microstructure and Hardness of Ni-Co Metal Matrix Nanocomposite

    Directory of Open Access Journals (Sweden)

    Ridwan

    2015-01-01

    Full Text Available Ni-Co-Si3N4 nanocomposite coatings were prepared by electrodeposition technique. The deposition was performed at 50 mA cm-2 on copper substrate. The working temperature of electrodepostion was constant at 500C in an acidic environment of pH 4. The effects of silicon in the nickel-cobalt metal matrix composite were investigated. Energy dispersive X-ray spectroscopy was used to determine the composition. The Co content in the coatings is in the range 27-49 at.%. The phase present in the Ni-Co-Si3N4 were examined with an X-ray diffraction analysis. All the reflection patterns indicate that the coatings are having face-centered cubic (fcc structure. The microhardness of the Ni-Co-Si3N4 nanocomposite coating increases with increasing silicon content. The microhardness of the Ni-Co-Si3N4 nanocomposite coating increased from 549 HV for Nickel-cobalt alloy coating to 641 HV for Ni-Co-Si3N4 nanocomposite coating with 5.47 at.% Si.

  11. Properties of silicon nitride thin overlays deposited on optical fibers — Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor

    Energy Technology Data Exchange (ETDEWEB)

    Śmietana, M., E-mail: M.Smietana@elka.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Dominik, M.; Myśliwiec, M.; Kwietniewski, N. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Mikulic, P. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada); Witkowski, B.S. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw 02-666 (Poland); Bock, W.J. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada)

    2016-03-31

    This work discusses the effect of sample suspension in radio frequency plasma-enhanced chemical vapor deposition process on properties of the obtained overlays. Silicon nitride (SiN{sub x}) overlays were deposited on flat silicon wafers and cylindrical fused silica optical fibers. The influence of the suspension height and fiber diameter on SiN{sub x} deposition rate is investigated. It has been found that thickness of the SiN{sub x} overlay significantly increases with suspension height, and the deposition rate depends on fiber dimensions. Moreover, the SiN{sub x} overlays were also deposited on long-period gratings (LPGs) induced in optical fiber. Measurements of the LPG spectral response combined with its numerical simulations allowed for a discussion on properties of the deposited overlay. The measurements have proven higher overlay deposition rate on the suspended fiber than on flat Si wafer placed on the electrode. Results of this work are essential for precise tuning of the functional properties of new generations of optical devices such as optical sensors, filters and resonators, which typically are based on optical fibers and require the overlays with well defined properties. - Highlights: • The effect of optical fiber suspension in plasma process is discussed. • The deposition rate of silicon nitride (SiN{sub x}) overlay depends on fiber dimensions. • Thickness of the SiN{sub x} overlay strongly increases with suspension height. • Measurements and simulations of long-period grating confirms experimental results.

  12. Microstructure and mechanical behavior of 6061Al reinforced with silicon nitride particles, processed by powder metallurgy

    Energy Technology Data Exchange (ETDEWEB)

    Amigo, V.; Ortiz, J.L.; Salvador, M.D.

    2000-01-31

    A critical step in the processing of Metal Matrix Composites (MMCs) reinforced with ceramic particles is the insertion of these particles into the metal matrix alloy. This greatly influences the strength of the composite since it is controlled by the metal-particle interfacial bond strength. Because of the difficulty in wetting ceramic particles with molten metal, the Powder Metallurgy or PM route was developed. Powder Extrusion consolidates the composite to over 98% dense, and can be carried out below the Solidus Temperature of the alloy. The most important aspect of the microstructure is the distribution of the reinforcing particles, and this depends on the processing and fabrication routes involved, as well as the relative size of the matrix and reinforcing particles. Extrusion can homogenize the structure to some extent, but minimizing reinforcement inhomogeneity during initial processing is important to achieve optimum properties.

  13. 太阳能多晶硅铸锭用石英坩埚氮化硅涂层的免烧工艺%Unfired Process for Silicon Nitride Coating of Quartz Crucible for Solar Poly-silicon Ingots

    Institute of Scientific and Technical Information of China (English)

    周艳华

    2012-01-01

    An unfired process is introduced for the spraying crucible during the production process for the solar poly- silicon ingots. Namely a little water soluble organic matter is added into the silicon nitride slurry(The water soluble organic matter is adhesive, damp-proof agent, dispersant),and then the silicon nitride powder is forcefully adsorbed on the inner wall of the crucible by the chemical adsorption of organic macromolecule and the physical absorption of silicon nitride. Compared to the traditional process which calcinates the spraying crucible at 1050℃ for 21 hours, this process can shorten production cycle, raise production efficiency and economize production cost.%本文介绍一种太阳能多晶硅片生产过程中,喷涂坩蜗免焙烧的工艺,即在氮化硅浆料中加入少许水溶性有机物(粘结剂、防潮剂、分散剂),通过有机高分子的化学吸附和氮化硅粉的物理吸附作用使氮化硅粉强有力地吸附在坩埚内壁,免去了传统工艺中喷涂坩蜗在坩蜗烧结炉中焙烧21h,焙烧温度为1050℃的工艺。与传统工艺相比,此工艺缩短硅片生产周期,提高生产效率,降低生产成本。

  14. Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Fodor, B., E-mail: fodor.balint@ttk.mta.hu [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences (MTA TTK MFA), 1121 Budapest, Konkoly Thege u. 29-33 (Hungary); Faculty of Science, University of Pécs, 7624 Pécs, Ifjúság útja 6 (Hungary); Cayrel, F. [GREMAN, pôle MTECH, Université François Rabelais, 16 rue Pierre et Marie Curie, B.P. 7155, F37071 Tours Cedex (France); Agocs, E. [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences (MTA TTK MFA), 1121 Budapest, Konkoly Thege u. 29-33 (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Egyetem u. 10, Veszprem 8200 (Hungary); Alquier, D. [GREMAN, pôle MTECH, Université François Rabelais, 16 rue Pierre et Marie Curie, B.P. 7155, F37071 Tours Cedex (France); Fried, M.; Petrik, P. [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences (MTA TTK MFA), 1121 Budapest, Konkoly Thege u. 29-33 (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Egyetem u. 10, Veszprem 8200 (Hungary)

    2014-11-28

    Single-crystalline silicon wafers covered with sacrificial oxide layer and epitaxially grown gallium nitride layers were implanted with high-fluence helium ions (2–6 × 10{sup 16} cm{sup −2}) at energies of 20–30 keV. Thermal annealings at 650–1000 °C, 1 h were performed on the Si samples and rapid thermal annealings at 600–1000 °C, 120 s under N{sub 2} were performed on the GaN samples. The as-implanted samples and the near-surface cavity distributions of the annealed samples were investigated with variable angle spectroscopic ellipsometry. In-depth defect profiles and cavity profiles can be best described with multiple independent effective medium sublayers of varying ratio of single-crystal/void. The number of sublayers was chosen to maximize the fit quality without a high parameter cross-correlation. The dependence of the implantation fluence, oxide layer thickness and annealing temperature on the cavity distribution was separately investigated. The ellipsometric fitted distributions were compared and cross-checked with analyses of transmission electron micrographs where the average surface cavity was determined sublayer by sublayer. The in-depth profiles were also compared with simulations of He and vacancy distributions. - Highlights: • He implanted and annealed Si and GaN measured by spectroscopic ellipsometry • Effective medium approximation models developed • Cavity formation as function of oxide thickness, ion dose, annealing temperature • Cavity in-depth distributions compared with transmission electron micrographs.

  15. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP (United Kingdom); Peuter, K. de; Kessels, W. M. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  16. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.

    Science.gov (United States)

    Zhang, Jun; Zhang, Lide; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2005-01-13

    Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.

  17. Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: a molecular dynamics study.

    Science.gov (United States)

    Lu, Xuefeng; Wang, Hongjie; Wei, Yin; Wen, Jiangbo; Niu, Min; Jia, Shuhai

    2014-08-01

    Molecular dynamics simulations are performed to clarify the extreme strain rate and temperature dependence of the mechanical behaviors of nano silicon nitride thin layers in a basal plane under tension. It is found that fracture stresses show almost no change with increasing strain rate. However, fracture strains decrease gradually due to the appearance of additional N(2c)-Si bond breaking defects in the deformation process. With increasing loading temperature, there is a noticeable drop in fracture stress and fracture strain. In the low temperature range, roughness phases can be observed owing to a combination of factors such as configuration evolution and energy change.

  18. Dynamics of 3D representation of interfaces in UV-induced chemical vapor deposition: experiments, modeling, and simulation for silicon nitride thin layers

    Science.gov (United States)

    Flicstein, Jean; Guillonneau, E.; Marquez, Jose; How Kee Chun, L. S.; Maisonneuve, D.; David, C.; Wang, Zh. Z.; Palmier, Jean F.; Courant, J. L.

    2001-06-01

    We study the surface dynamics of silicon nitride films deposited by UV-induced low pressure chemical vapor pressure. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state coherent wit the Kardar-Parisi-Zhang (KPZ) equation. Discrete geometry techniques are oriented to extra morphological characteristics of surface and bulk which corresponds to computer simulated photodeposit. This allows to determine the physical origin of KPZ scaling to be al ow value of the surface sticking probability, and connected to the surface concentration of activate charged centers, which permits to start the evaluation of the Monte Carlo-molecular dynamics simulator.

  19. Comparative study on microstructure, crystallite size and lattice strain of as-deposited and thermal treatment silver silicon nitride coating on Ti6Al4V alloy

    Science.gov (United States)

    Zalilah, Umi; Mahmoodian, R.

    2017-06-01

    Silver silicon nitride coating were deposited on Ti6Al4V alloy using physical vapor deposition magnetron sputtering technique. Field Emission Spectroscopy (FESEM), Electron Dispersive Spectroscopy (EDS) and X-ray diffraction (XRD) were used to characterize as-deposited and after heat treatment of AgSiN coatings in order to understand the morphology, compositions and structure. Meanwhile, in determining the crystallite size and lattice strain, the simplified Williamson-Hall plot method was utilized. The heat treated coated sample shown to reveal granular surface structure, bigger crystallite size and lattice strain as compared to the as-deposited coated sample.

  20. The production of silicon carbon nitride ceramic fibres from poly-silazane polymers. Herstellung von Siliciumcarbonitrid-Keramikfasern aus Polysilazan-Polymeren

    Energy Technology Data Exchange (ETDEWEB)

    Holzinger, R.

    1994-07-14

    The investigations carried out in this work can be divided into two main points. One, the process technique branch, goes along the polymer precursor route. This includes the melt spinning of the poly-silazane polymers, the stabilisation of the green fibres and finally pyrolysis to silicon-carbon nitride ceramic fibres. Starting from the polymers, all the reactions and structural changes during the individual steps are examined. These experiments represent the second main part of the work. The optimisation criterion is always the tensile strength of the resulting ceramic fibres. (orig.)

  1. Sintering and microstructural characterization of the silicon nitride activated with niobium, praseodymium and neodymium oxides; Sinterizacao e caracterizacao microestrutural do nitreto de silicio aditivado com niobia, preaseodimia e neodimia

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Cosme Roberto Moreira da; Folgueras, Luiza de Castro [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil). Inst. de Atividades Espaciais

    1997-12-31

    The aim of this work is the sintering and characterization of silicon nitride with neodimia, niobia and praseodimia additions. The sintering process was performed at 1750 deg C, during 30 minutes. The characterization induced porosity determination, additive distribution X-ray diffraction and Knoop microhardness evaluation. Higher density and more effective {alpha}-> {beta} transformation has been achieved on samples with praseodimia/neodimia additions. These results are associated with more effective liquid phase sintering mechanism, operative for such compositions. It will enable bigger wetting of silicon nitride grains, higher solubility and diffusion via liquid phase, in comparison with niobia/neodimia samples. (author) 9 refs., 4 figs., 2 tabs.

  2. PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

    Directory of Open Access Journals (Sweden)

    Natalita M. Nursam

    2010-01-01

    Full Text Available The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-SiN:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45 GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine the surface recombination velocity and emitter saturation current density as a function of net charge density. Our results show that the application of negative charge causes a substantial reduction in the surface recombination of samples with boron diffused emitters, even for high boron surface concentrations of 5×1019 cm−3. The significant difference observed in surface recombination between boron diffused and undiffused sample under accumulation implies that the presence of boron diffusion has results in some degradation of the Si-SiN interface. Further, (111 oriented surfaces appear more sensitive to the boron surface concentration than (100 oriented surfaces.

  3. Cubic silicon carbide and boron nitride as possible primary pressure calibrants for high pressure and temperature scale

    Science.gov (United States)

    Zhuravlev, K. K.; Goncharov, A. F.; Tkachev, S. N.; Prakapenka, V.

    2010-12-01

    K. K. Zhuravlev, A. F. Goncharov Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington DC, 20015 V. Prakapenka, S. N. Tkachev CARS, the University of Chicago, Bldg. 434A, Argonne National Laboratory, 9700 S. Cass. Ave., Argonne, IL 60439 Abstract Since its introduction, ruby-based pressure scale (Mao et al., 1986) has been the most commonly used by the high-pressure scientific community. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, which will be capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently (Goncharov et al., 2005) proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards, i.e. cBN can be a primary pressure calibrant. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment at high pressures in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). Its density and elastic parameters are quite different from the diamond ones and it is stable over the broad range of temperatures and pressures (up to 1 Mbar). SiC-3C is transparent and allows the use of Brillouin spectroscopy. Additionally, SiC-3C has two strong Raman lines, which can be used for the optical in situ pressure measurements. We report our experimental data on both cBN and SiC-3C and show that they, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale. We performed single crystal x-ray diffraction and Brillouin

  4. Research on Silicon Nitride Films Deposited by PECVD Technology%PECVD法氮化硅薄膜制备工艺的研究

    Institute of Scientific and Technical Information of China (English)

    汪文君; 孙建洁; 朱赛宁; 张世权

    2013-01-01

    Silicon nitride thin films were deposited successfully on Si substrates by plasma-enhanced chemical vapor deposition(PECVD). The thickness and refractive index of the thin iflms were tested by ellipsometer and proiflometry, respectively. The inlfuences of silane-ammonia lfow ratio(SAR)and spacing on the performance of silicon nitride thin iflms were studied. Results showed that the thickness and refractive index of thin iflms increased with SAR, and the etching rate in HF decreased rapidly after annealing.%采用等离子体增强化学气相沉积法(PECVD)在单晶硅衬底上制备了氮化硅薄膜,分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响,发现当硅烷氨气流量比增加时,薄膜厚度和折射率均随之增加,并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。

  5. Influence of additive system (Al2O3-RE2O3 , RE = Y, La, Nd, Dy, Yb on microstructure and mechanical properties of silicon nitride-based ceramics

    Directory of Open Access Journals (Sweden)

    Juliana Marchi

    2009-06-01

    Full Text Available Silicon nitride based ceramics have been widely used as structural ceramics, due mainly to their thermo-mechanical properties such as high density, high thermal shock resistance, corrosion resistance and chemical stability. The aim of this study was to determine the influence of rare earth and aluminum oxide additions as sintering aids on densification, microstructure and mechanical properties of silicon nitride. Silicon nitride mixtures with 91 wt. (% Si3N4 and 9% wt. (% additives were prepared and sintered. The density, microstructure and mechanical properties of the sintered specimens of these mixtures were determined. In most specimens, scanning electron microscopic examination and X ray diffraction analysis revealed elongated grains of β-Si3N4 with aspect ratio of about 2.0 and dispersed in a glassy phase. The density of the sintered specimens was higher than 94% of the theoretical density (td and specimens with La2O3 and Al2O3 additions exhibited the highest value. The results of this investigation indicate that the rare earth ion size influences densification of silicon nitride, but this correlation was not observed in specimens containing two different rare earth oxides. The hardness values varied in direct proportion to the density of the specimens and the fracture toughness values were influenced by the composition of the intergranular glassy phase.

  6. Q-Band (45 GHz) Microwave Integrated Circuit Power Amplifier Designs Submitted to TriQuint Semiconductor for Fabrication with 0.15-micron High-Electron-Mobility Transistors (HEMT) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

    Science.gov (United States)

    2013-09-01

    Electron-Mobility Transistors (HEMT) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) by John E. Penn ARL-TN-0574 September 2013...µm High-Electron-Mobility Transistors (HEMT) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) John E. Penn Sensors and Electron Devices...with 0.15-µm High- Electron-Mobility Transistors (HEMT) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) 5a. CONTRACT NUMBER 5b. GRANT

  7. A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases

    Science.gov (United States)

    Bouaziz, Lamia; Dridi, Donia; Karyaoui, Mokhtar; Angelova, Todora; Sanchez Plaza, Guillermo; Chtourou, Radhouane

    2017-03-01

    In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.

  8. Investigation of isochronal annealing on the optical properties of HWCVD amorphous silicon nitride deposited at low temperatures and low gas flow rates

    Science.gov (United States)

    Muller, T. F. G.; Jacobs, S.; Cummings, F. R.; Oliphant, C. J.; Malgas, G. F.; Arendse, C. J.

    2015-06-01

    Hydrogenated amorphous silicon nitride (a-SiNx:H) is used as anti-reflection coatings in commercial solar cells. A final firing step in the production of micro-crystalline silicon solar cells allows hydrogen effusion from the a-SiNx:H into the solar cell, and contributes to bulk passivation of the grain boundaries. In this study a-SiNx:H deposited in a hot-wire chemical vapour deposition (HWCVD) chamber with reduced gas flow rates and filament temperature compared to traditional deposition regimes, were annealed isochronally. The UV-visible reflection spectra of the annealed material were subjected to the Bruggeman Effective Medium Approximation (BEMA) treatment, in which a theoretical amorphous semiconductor was combined with particle inclusions due to the structural complexities of the material. The extraction of the optical functions and ensuing Wemple-DeDomenici analysis of the wavelength-dependent refractive index allowed for the correlation of the macroscopic optical properties with the changes in the local atomic bonding configuration, involving silicon, nitrogen and hydrogen.

  9. A Fabrication Route for Arrays of Ultra-low-Noise MoAu Transition Edge Sensors on Thin Silicon Nitride for Space Applications

    CERN Document Server

    Glowacka, D M; Goldie, D J; Withington, S

    2014-01-01

    We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form long-thin legs with widths of 2.1 {\\mu}m. Using bilayers formed on SiNx islands from films with 40 nm-thick Mo and Au thicknesses in the range 30 to 280 nm deposited by dc-sputtering in ultra-high vacuum we can obtain tunable transition temperatures in the range 700 to 70 mK. The sensors use large-area absorbers fabricated from high resistivity, thin-film beta-phase Ta to provide impedance-matching to incident radiation. The absorbers are patterned to reduce the heat capacity associated with the nitride support structure and include Au thermalizing features to assist the heat flow into the TES. Arrays of 400 detectors at the pixel spacing required for the long-wavelength band of the far-infrared instrument SAFARI are now being fabricated. Device yields approaching 99% are achi...

  10. TiC Particle Reinforced Silicon Nitride Composite Joined With Y2O3-Al2O3-SiO2 Mixture

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Silicon nitride composite is joined to itself by heating interlayer of Y2O3-Al2O3-SiO2 mixtures above their liquidus temperatures in flowing nitrogen. The joined specimens are tested in four point flexure from room temperature to 1373K. The interface microstructure and fractured surfaces after testing are observed and analyzed by SEM, EPMA and XRD respectively. The results show that Y2O3-Al2O3-SiO2 glass reacts with Si3N4 at interface, forming the Si3N4/Si2N2O(Y-Al-Si-O-N glass/ Y-Al-Si-O glass gradient interface. With the increase of bonding temperature and holding time, the joint strength first increases, reaching a peak, and then decreases.According to interfacial analyses, the bonding strength depends on joint thickness.

  11. Density functional theory study on the full ALD process of silicon nitride thin film deposition via BDEAS or BTBAS and NH3.

    Science.gov (United States)

    Huang, Liang; Han, Bo; Han, Bing; Derecskei-Kovacs, Agnes; Xiao, Manchao; Lei, Xinjian; O'Neill, Mark L; Pearlstein, Ronald M; Chandra, Haripin; Cheng, Hansong

    2014-09-14

    A detailed reaction mechanism has been proposed for the full ALD cycle of Si3N4 deposition on the β-Si3N4(0001) surface using bis(diethylamino)silane (BDEAS) or bis(tertiarybutylamino)silane (BTBAS) as a Si precursor with NH3 acting as the nitrogen source. Potential energy landscapes were derived for all elementary steps in the proposed reaction network using a periodic slab surface model in the density functional approximation. Although the dissociative reactivity of BTBAS was slightly better than that of BDEAS, the thermal deposition process was still found to be an inherently high temperature process due to the high activation energies during the dissociative chemisorption of both precursors and the surface re-amination steps. These results underline the need to develop new precursors and alternative nitrogen sources when low temperature thermal silicon nitride films are targeted.

  12. Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Te [Department of Polymer Engineering, National Taiwan University of Science and Technology, 43, Sec 4, Keelung Rd, Taipei 106, Taiwan (China); Lee, Hsun-Tsing [Department of Materials Science and Engineering, Vanung University, Chung-Li, Tao-Yuan, Taiwan (China); Chen, Jem-Kun, E-mail: jkchen@mail.ntust.edu.tw [Department of Polymer Engineering, National Taiwan University of Science and Technology, 43, Sec 4, Keelung Rd, Taipei 106, Taiwan (China)

    2015-03-01

    Highlights: • Bisphenol-F based boron-phenolic resins (B-BPF) with B−O bonds were synthesized. • The modified silicon nitride (m-SiN) was well dispersed and adhered in the B-BPF. • B-BPF/m-SiN composites have good thermal resistance and mechanical properties. • The grinding wheels bound by B-BPF/m-SiN have excellent grinding quality. - Abstract: In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link B−O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins.

  13. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns.

    Science.gov (United States)

    Liu, Zuwei; Gu, Xiaodan; Hwu, Justin; Sassolini, Simone; Olynick, Deirdre L

    2014-07-18

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature's shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

  14. High Temperature Behavior of Ferro-Silicon Nitride Prepared by Flash Combustion Synthesis at Reducing Atmosphere%还原气氛下闪速燃烧合成氮化硅铁的高温行为

    Institute of Scientific and Technical Information of China (English)

    宋文; 陈俊红; 李勇; 孙加林

    2011-01-01

    为模拟闪速燃烧合成氮化硅铁在工作环境中的高温行为,研究了高温还原气氛下氮化硅铁的存在状态。根据热力学计算,采用在空气气氛中埋碳升温的方法,控制氧气分压在较低水平,将氮化硅铁样品分别升温至1 300℃及1 500℃,保温300 min后迅速水冷,以保存高温下样品的微观结构。采用X射线衍射和扫描电子显微镜表征样品的物相组成和微观结构。结果表明:室温下氮化硅铁的物相组成为α-Si3N4、β-Si3N4、SiO2和Fe3Si。在高温还原条件下,α-Si3N4转变为β-Si3N4,二氧化硅逐渐分解,而Fe3Si相未%This paper focused on the behaviors of ferro–silicon nitride at high temperature and reducing atmosphere to simulate the service environment of ferro–silicon nitride prepared by flash combustion synthesis.The specimen was sintered surrounded by the carbon in air to control partial pressure of oxygen at a low level on the basis of thermodynamic calculation.Ferro–silicon nitride was sintered at 1 300 ℃ and 1 500 ℃ separately and insulated for 300 min then got rapid hydrocooling to keep the microstructure at high temperature.Phase composition and microstructure of the specimens were studied by X-ray diffraction and scanning electron micro-scope.Results show that ferro–silicon nitride contained α-Si3N4,β-Si3N4,SiO2 and Fe3Si at room temperature.α-Si3N4 converted into β-Si3N4 and SiO2 decomposed at high temperature in reducing atmosphere,while Fe3Si was stable.Silicon nitride was decomposed into small grains with bigger specific surface area and reaction activity.And Si2N2O formed on the surface of silicon nitride.

  15. Determination of molecular stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, N.P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Unversidade de Lisboa, Estrada Nacional 10 ao km 139.7, 2695-066 Bobadela LRS (Portugal); Bergmaier, A. [Institut für Angewandte Physik und Messtechnik, Fakultät für Luft und Raumfahrttechnik, Werner-Heisenberg-Weg 39, D-85577 Neubiberg (Germany); Mizohata, K. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Msimanga, M. [iThemba LABS Gauteng, National Research Foundation, Private Bag 11, WITS 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, Private Bag X680, Pretoria 0001 (South Africa); Räisänen, J. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Sajavaara, T. [Department of Physics, University of Jyväskylä, Survontie 9, 40014 Jyväskylä (Finland); Simon, A. [International Atomic Energy Agency, Division of Physical and Chemical Sciences, Vienna International Centre, P.O. Box 100, A-1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences, (ATOMKI), P.O. Box 51, H-4001 Debrecen (Hungary)

    2015-10-01

    Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si{sub 3}N{sub 4}, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the ions involved, which in the case of HI-ERDA is both the primary beam, and the recoiled species. We measured the stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in a well-characterised silicon nitride membrane. The measurements were made by independent groups utilising different experimental setups and methods. In some cases there is extensive overlap of the energy range in different experiments, allowing a comparison of the different results. The four independent data sets reported in this work are in excellent agreement with each other, in the cases where similar energy ranges were measured. On the other hand, the data are in most cases higher than calculations made with the interpolative schemes SRIM and MSTAR together with the Bragg rule. Better agreement is found with MSTAR in some of the cases studied. This work is a significant extension of the heavy ion stopping power data base for silicon nitride.

  16. Parametrization of the Stillinger-Weber potential for Si/N/H system and its application to simulations of silicon nitride film deposition with SiH4/NH3

    Science.gov (United States)

    Deng, Xiaodi; Song, Yixu; Li, JinChun; Pu, Yikang

    2014-02-01

    We determined the Stillinger-Weber interatomic potential parameters for Si/N/H system based on first principles density functional calculations. This new potential can be used to perform classical molecular dynamics simulation for silicon nitride deposition on Si substrate. During the first principles calculations, cluster models have been carefully and systematically chosen to make sampling of the interatomic potential supersurface more thoroughly. Global optimization method was used to fit the ab initio data into Stillinger-Weber form. We used a recursive method to perform the classical molecular dynamics simulations for silicon nitride (SiN) film growth on Si substrate with SiH4/NH3 gas mixtures. During the simulation, we could clearly observe the silicon nitride film growth progress. In this paper, we present the details of potential derivation and simulation results with different SiH4:NH3 ratios. It is demonstrated that this new potential is suitable to describe the surface reactions of the Si/N/H system and allows us to explore more complex SiN growing process such as plasma-enhanced chemical vapor deposition.

  17. Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

    NARCIS (Netherlands)

    Saadaoui, M.; van Zeijl, H.; Wien, W. H. A.; Pham, H. T. M.; Kwakernaak, C.; Knoops, H. C. M.; Kessels, W. M. M.; R. van de Sanden,; Voogt, F. C.; Roozeboom, F.; Sarro, P. M.

    2011-01-01

    One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the concentr

  18. Analysis of recovery process of low-dose neutron irradiation-induced defects in silicon nitride-based ceramics by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Rueanngoen, Areerak, E-mail: areerak_k@yahoo.com [Department of Nuclear Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550 (Japan); Kanazawa, Koumei [Department of Nuclear Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550 (Japan); Imai, Masamitsu; Yoshida, Katsumi; Yano, Toyohiko [Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550 (Japan)

    2014-12-15

    Two kinds of silicon nitride ceramics consisting of different polymorphs were neutron-irradiated up to 8.5 × 10{sup 24} n/m{sup 2} (E > 0.1 MeV) at 563 K, and their annealing behaviors were compared to those of previously reported SiAlON polymorphs subjected to the same irradiation condition. The macroscopic length change of α- and β-Si{sub 3}N{sub 4} and α- and β-SiAlON were 0.11%, 0.06%, 0.12% and 0.14%, respectively. Based on swelling data and microstructural observations, the low dose neutron irradiation-induced defects in silicon nitride-based ceramics were considered to be primarily point defects. In order to investigate the kinetics of defect recovery, these irradiated specimens were isothermally and isochronally annealed continuously up to 1473 K. Macroscopic length change decreased gradually with increasing annealing temperature. Recovery curves of isochronal annealing of α-Si{sub 3}N{sub 4} and α-SiAlON were similar, and those of β-Si{sub 3}N{sub 4} and β-SiAlON were also similar. The recombination rate constant as a first-order reaction increased with the increasing of the isothermal annealing temperature. A two-stage recovery process was considered between the irradiation temperature and 1473 K. The activation energies at higher temperatures were almost double those at lower temperatures in both Si{sub 3}N{sub 4} and SiAlON. At lower temperatures range the recovery should occur by annihilation of close-spaced Frenkel pairs. On the other hand, at higher temperatures, the recovery process may be governed by the annihilation of separated Frenkel pairs. In addition, the activation energies for defect recovery in Si{sub 3}N{sub 4} were larger than defects in SiAlON. Recovery characteristics of α- and β-phases were different in both crystals that are suggested to be due to differences in crystal structures.

  19. Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha

    2005-07-15

    Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

  20. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    KAUST Repository

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  1. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Science.gov (United States)

    Hazari, Arnab; Aiello, Anthony; Ng, Tien-Khee; Ooi, Boon S.; Bhattacharya, Pallab

    2015-11-01

    III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ˜3 × 1010 cm-2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10-17 cm2, respectively. The peak emission is observed at ˜1.2 μm.

  2. Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

    Science.gov (United States)

    Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

    2015-03-01

    In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link Bsbnd O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins.

  3. Combined Poisson and soft-particle DLVO analysis of the specific and nonspecific adhesion forces measured between L. monocytogenes grown at various temperatures and silicon nitride.

    Science.gov (United States)

    Gordesli, F Pinar; Abu-Lail, Nehal I

    2012-09-18

    Adhesion forces between pathogenic L. monocytogenes EGDe and silicon nitride (Si(3)N(4)) were measured using atomic force microscopy (AFM) under water and at room temperature for cells grown at five different temperatures (10, 20, 30, 37, and 40 °C). Adhesion forces were then decoupled into specific (hydrogen bonding) and nonspecific (electrostatic and Lifshitz-van der Waals) force components using Poisson statistical analysis. The strongest specific and nonspecific attraction forces were observed for cells grown at 30 °C, compared to those observed for cells grown at higher or lower temperatures, respectively. By combining the results of Poisson analysis with the results obtained through soft-particle Derjaguin-Landau-Verwey-Overbeek (DLVO) analysis, the contributions of the Lifshitz-van der Waals and electrostatic forces to the overall nonspecific interaction forces were determined. Our results showed that the Lifshitz-van der Waals attraction forces dominated the total nonspecific adhesion forces for all investigated thermal conditions. However, irrespective of the temperature of growth investigated, hydrogen bonding forces were always stronger than the nonspecific forces. Finally, by combining Poisson analysis with soft-particle analysis of DLVO forces, the closest separation distances where the irreversible bacterial adhesion takes place can be determined relatively easily. For all investigated thermal conditions, the closest separation distances were <1 nm.

  4. Transient, three-dimensional heat transfer model for the laser assisted machining of silicon nitride: 1. Comparison of predictions with measured surface temperature histories

    Energy Technology Data Exchange (ETDEWEB)

    Rozzi, J.C.; Pfefferkorn, F.E.; Shin, Y.C. [Purdue University, (United States). Laser Assisted Materials Processing Laboratory, School of Mechanical Engineering; Incropera, F.P. [University of Notre Dame, (United States). Aerospace and Mechanical Engineering Department

    2000-04-01

    Laser assisted machining (LAM), in which the material is locally heated by an intense laser source prior to material removal, provides an alternative machining process with the potential to yield higher material removal rates, as well as improved control of workpiece properties and geometry, for difficult-to-machine materials such as structural ceramics. To assess the feasibility of the LAM process and to obtain an improved understanding of governing physical phenomena, experiments have been performed to determine the thermal response of a rotating silicon nitride workpiece undergoing heating by a translating CO{sub 2} laser and material removal by a cutting tool. Using a focused laser pyrometer, surface temperature histories were measured to determine the effect of the rotational and translational speeds, the depth of cut, the laser-tool lead distance, and the laser beam diameter and power on thermal conditions. The measurements are in excellent agreement with predictions based on a transient, three-dimensional numerical solution of the heating and material removal processes. The temperature distribution within the unmachined workpiece is most strongly influenced by the laser power and laser-tool lead distance, as well as by the laser/tool translational velocity. A minimum allowable operating temperature in the material removal region corresponds to the YSiAlON glass transition temperature, below which tool fracture may occur. In a companion paper, the numerical model is used to further elucidate thermal conditions associated with laser assisted machining. (author)

  5. The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.

    Science.gov (United States)

    Sahu, B B; Yin, Y Y; Tsutsumi, T; Hori, M; Han, Jeon G

    2016-05-14

    Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications.

  6. Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11 MeV C{sub 60}{sup 3+} impacts

    Energy Technology Data Exchange (ETDEWEB)

    Kitayama, T.; Nakajima, K.; Suzuki, M. [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan); Narumi, K.; Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Matsuda, M.; Sataka, M. [Nuclear Science Research Institute, Japan Atomic Energy Agency, Tokai, Naka, Ibaraki 319-1195 (Japan); Tsujimoto, M.; Isoda, S. [Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501 (Japan); Kimura, K., E-mail: kimura@kues.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)

    2015-07-01

    Gold nanoparticles with an average diameter of 3.6 nm were deposited on amorphous silicon nitride (a-SiN) films. These samples were irradiated with 1.11 MeV C{sub 60}{sup 3+} ions to a fluence of ∼5 × 10{sup 10} ions/cm{sup 2} and observed using transmission electron microscopy (TEM). The ion tracks were clearly seen as bright spots and the gold nanoparticles disappeared from a surface area with a diameter of ∼20 nm around each ion track. The disappeared nanoparticles were collected by a foil placed in front of the sample. Gold particles of circular shape with a diameter of several nm were observed on the collector foil using TEM, suggesting that the gold nanoparticles were emitted as liquid droplets from the a-SiN film upon impact of the C{sub 60} ion. In view of the previous molecular dynamics simulations (Anders et al., 2009), this indicates that the surface temperature rises above the melting point of gold in the region with a diameter of ∼20 nm around the ion impact position.

  7. A novel technique based on a plasma focus device for nano-porous gallium nitride formation on P-type silicon

    Science.gov (United States)

    Sharifi Malvajerdi, S.; Salar Elahi, A.; Habibi, M.

    2017-04-01

    A new deposition formation was observed with a Mather-type Plasma Focus Device (MPFD). MPFD was unitized to fabricate porous Gallium Nitride (GaN) on p-type Silicon (Si) substrate with a (100) crystal orientation for the first time in a deposition process. GaN was deposited on Si with 4 and 7 shots. The samples were subjected to a 3 phase annealing procedure. First, the semiconductors were annealed in the PFD with nitrogen plasma shots after their deposition. Second, a thermal chemical vapor deposition annealed the samples for 1 h at 1050 °C by nitrogen gas at a pressure of 1 Pa. Finally, an electric furnace annealed the samples for 1 h at 1150 °C with continuous flow of nitrogen. Porous GaN structures were observed by Field emission scanning electron microscopy and atomic force microscopy. Furthermore, X-Ray diffraction analysis was carried out to determine the crystallinity of GaN after the samples were annealed. Energy-Dispersive X-Ray Spectroscopy indicated the amount of gallium, nitrogen, and oxygen due to the self-oxidation of the samples. Photoluminescence spectroscopy revealed emissions at 2.94 eV and 3.39 eV, which shows that hexagonal wurtzite crystal structures were formed.

  8. Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

    2016-03-01

    This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes are extensively characterized using different plasma diagnostic tools to study their plasma and radical generation capabilities. A typical transition of the electron energy distribution function from single- to bi-Maxwellian type is achieved by combining RF and ultra-high powers. Data analysis revealed that the RF/UHF dual frequency power enhances the plasma surface heating and produces hot electron population with relatively low electron temperature and high plasma density. Using various film analysis methods, we have investigated the role of plasma parameters on the compositional, structural, and optical properties of the deposited films to optimize the process conditions. The presented results show that the dual frequency power is effective for enhancing dissociation and ionization of neutrals, which in turn helps in enabling high deposition rate and improving film properties.

  9. Study on the Structure and Corrosion-resistant Performance of Phosphate/Silicon Nitride Double Composite Coating on Magnesium Alloy%镁合金磷酸盐/氮化硅双层复合膜结构及耐蚀性能研究

    Institute of Scientific and Technical Information of China (English)

    宋辉; 赵明; 何广平; 冯伟

    2014-01-01

    Objective To solve the problems of traditional chemical conversion coatings on magnesium alloy such as large micro-cracks and poor corrosion resistance, a novel phosphate/ silicon nitride compound coating was prepared in this article. Methods First traditional magnesium phosphate conversion treatment was conducted, and then plasma enhanced chemical vapor deposition technology was used to deposit silicon nitride film layer. The morphology, element distribution, surface potential and polarization curve of the composite coating were analyzed, and compared with those of the phosphate conversion coating. Results Silicon nitride film layer could be selectively priorly deposited on the cracking positions of the phosphate conversion coating, and filled the cracks on the conversion coating layer, forming dense composite coating structure. The surface potential and corrosion potential of magne-sium alloy with composite coating structure were significantly higher than those of magnesium alloy treated with traditional phosphate conversion process. Conclusion After preparation of phosphate/ silicon nitride double composite coating on the surface of magnesi-um alloy, the corrosion resistance was significantly higher than that of the magnesium alloy treated with traditional phosphate con-version.%目的:针对传统镁合金化学转化膜裂纹尺寸大、耐腐蚀性差等问题,制备一种镁合金磷酸盐/氮化硅双层结构的抗腐蚀复合膜。方法先对镁合金进行传统磷酸盐转化处理,再运用等离子体增强化学气相沉积技术沉积氮化硅膜层,分析复合膜的形貌、元素分布、表面电位及极化曲线,并与磷酸盐转化膜进行对比。结果氮化硅膜层能在磷酸盐转化膜裂纹处选择性优先沉积,从而在相当程度上填补转化膜层的裂纹,形成致密的复合膜结构。具有复合膜结构的镁合金表面电位和腐蚀电位明显高于传统磷酸盐转化处理的镁合金。结论

  10. 二元混杂粒径氮化硅填充硅橡胶的性能%Properties of Silicone Rubber Filled with Silicone Nitride Particles with Binary Particle Size Distribution

    Institute of Scientific and Technical Information of China (English)

    周文英; 左晶

    2011-01-01

    Two kinds of hybrid silicone nitride (Si3N4) particles with binary particle size distribution, i.e.,(15μm+ 0.6μm), (3μm + 0.6μm), were used to reinforce silicone rubber at the 65% total fillers content. The properties of filled silicone rubber were investigated as a function of relative content of the 0.6μm small particles (Ws). The results indicate that thermal conductivity and tensile strength reach the maximum values at Ws being 20%, 25% for the ( 15μm + 0.6μm) reinforced system, and 40 %, 15 % for the (3μm + 0.6μm) reinforced system,respectively; dielectric constants reduce to the lowest values at the Ws of 20% and 30 %, respectively, and coefficient of thermal expansion reduces with increasing the Ws for the two systems. Furthermore, the Si3N4 particle size has the effect on the properties of silicone rubber.%在质量分数65%总氮化硅用量下,分别选取0.6 μm、3.0 μm、15 μm三种粒径氮化硅粒子,按照15 μm/0.6 μm=25、3.0 μm/0.6 μm=5两种组合所得混杂粒子来填充硅橡胶,研究两体系中的小粒子相对含量(Ws)变化对硅橡胶性能的影响.结果表明,硅橡胶热导率分别在Ws为20%及40%处达到最大值,拉伸强度分别在Ws为25%及15%处达到最大值,介电常数约在Ws为20%及30%处下降至最低值,热膨胀系数均随小粒子用量增加而下降.此外,氮化硅粒子大小对硅橡胶上述性能有一定影响.

  11. Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate%Si(111)衬底上生长GaN晶环的研究

    Institute of Scientific and Technical Information of China (English)

    王显明; 孙振翠; 魏芹芹; 王强; 曹文田; 薛成山

    2004-01-01

    利用热壁化学气相沉积在Si(111)衬底上获得GaN晶环,采用扫描电镜(SEM)、选择区电子衍射(SAED)、X射线衍射(XRD),光致发光(PL)谱和傅里叶红外吸收谱(FTIR)对晶环的组成、结构、形貌和光学特性进行分析.初步结果证明:在Si(111)衬底上获得择优生长的六方纤锌矿结构的GaN晶环.SEM显示在均匀的薄膜上出现直径约为10μm的5晶环,由XRD和SAED的分析证实晶环呈六方纤矿多晶结构,FTIR显示GaN薄膜的主要成分为GaN,同时含有少量的C污染,PL测试表明晶环呈现不同于GaN薄膜的发光特性.%The crystal loops of Gallium nitride (GaN) were deposited on silicon (111) substrate by using hot-wall chemical vapor deposition and thermal treatment. Scanning electron microscopy (SEM), selected area electron diffraction (SAED), x-ray diffraction (XRD), photoluminescence (PL) and Fourier Transform Infrared transmission (FTIR) Spectroscopy were employed to analyze the surface morphology, structure and optical properties of GaN layer.SEM image shows five half-loops attached to a crystal string side by side in the uniform films. XRD, SAED patterns reveal that the formed loops are polycrystalline hexagonal gallium nitride. FTIR pattern shows the main composition of the film is GaN and it contains trifle carbon contamination. New feature is found in PL pattern of the crystal loops,which is different from the bulk GaN films.

  12. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  13. Boron Nitride and Silicon Nitride Systems

    Science.gov (United States)

    1991-02-01

    Preparation Thereof" US-Patent 2947617 GEC, 2.Aug.i960 E7O6auJ J.Gaude and J.Lang, "The System Strontium-Nitrogen",Rev.Chim. Minerale 7 (1970) 10)59...Chim. Minerale 11 (1974) 80-84 [85VilJ C.Villars and L.D.Calvert,"Pearsons Handbook of Crystallographic Data for Intermetallic Phases" (Amer.Soc. Met

  14. Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga (Portugal); Majee, S. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Cerqueira, M.F. [INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga (Portugal); Tondelier, D. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Geffroy, B. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Laboratoire d' Innovation de Chimie des Surfaces et des Nanomatériaux, IRAMIS/NIMBE, CNRS UMR 3685, CEA Saclay, 91191 Gif-sur-Yvette (France); Bonnassieux, Y. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Bourée, J.E., E-mail: jean-eric.bouree@polytechnique.edu [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France)

    2015-11-30

    Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiN{sub x}) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~ 100°°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximum ion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiN{sub x} single layers, a minimum WVTR of 5 × 10{sup −4} g/(m{sup 2} day), measured at room temperature, was found for a maximum ion energy of ~ 30 eV. This minimum WVTR value was reduced to 7 × 10{sup −5} g/(m{sup 2} day) for a stack of five SiN{sub x} single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy. - Highlights: • Αn original way to achieve permeation barriers on polymer substrates is developed. • It combines SiN{sub x} multilayers grown by HWCVD with an intermediate Ar plasma treatment. • A minimum of water vapor transmission rate is found related to maximum Ar ion energy. • This minimum is due to atomic rearrangement in SiN{sub x} interfaces under the impact of ions. • The average Ar ion energy must exceed atomic threshold displacement energy for Si.

  15. A theoretical study of the structures and electronic transitions of small silicon nitride clusters (SinNm, n + m ⩽ 4)

    Science.gov (United States)

    Owusu-Ansah, E.; Wang, Y. M.; Shi, Y. J.

    2016-12-01

    A quantum mechanical study of small silicon nitride clusters (SinNm, n + m ⩽ 4) was performed for both the ground and excited electronic states. The diatomic SiN as well as the tri-atomic SiN2 and Si2N clusters were chosen as our benchmark systems for an extensive investigation of the various methods, functionals and basis sets. Among the methods investigated for the ground-state geometry optimization and vibrational frequency calculations, density functional theory (DFT) with the B3LYP functional was found to be the best performed method overall. For the basis set, 6-311G(d) is chosen for its nice balance between accuracy and efficiency in time. At the B3LYP/6-311G(d) level of theory, the most stable isomers of SiN2, Si2N, SiN3, Si3N and Si2N2, were determined to be the triplet (3Σ-) asymmetric linear isomer (Sisbnd Ndbnd N), the doublet (2Πg) symmetric linear isomer (Sidbnd Ndbnd Si), the doublet (2A‧) nonlinear isomer (Sidbnd Nsbnd Ndbnd N), the doublet (2B1) Y-type isomer, and the singlet (1Σg+) symmetric linear isomer (Sidbnd Ndbnd Ndbnd Si), respectively. Analysis of the relative energies of various stable isomers shows that Nsbnd N bonding is the most favored one and Sisbnd Si bonding is least favored. Due to its good performance in predicting the electronic transitions from the X2Σ+ ground state of SiN to three low-lying excited states A2 Π , B2Σ+ , and D2 Π , TDDFT/B3LYP/6-311G(d) was chosen over EOMCCSD/6-311G(d) for the excited state calculations. The first ten electronic transitions for the most stable isomers of all SinNm (n + m ⩽ 4) clusters were calculated.

  16. Development of high-temperature resistant, noncorrodible, nonmetallic ceramic materials, especially silicon nitride in gas turbine application. Entwicklung von hochwarmfesten, korrosionsbestaendigen, nichtmetallischen keramischen Werkstoffen, insbesondere Siliciumnitrid fuer den Gasturbinenbau

    Energy Technology Data Exchange (ETDEWEB)

    Blecha, M.; Pohlmann, H.J.

    1985-03-01

    The report under review is part of the project 'Ceramic Materials for Automobile Gas Turbines', which has been sponsored by the Ministry for Research and Technology of the Federal Republic of Germany since 1974 and describes the works in the years from 1980 to 1983. Special effort has been made in the improvement of silicon nitride concerning oxidation resistance and strength, suitable production techniques such as foil casting, injection moulding, extrusion and isostatic pressing as well as the manufacturing of structural components with improved material data for test purposes. With this the tight connection of production techniques, construction and testing in simulated application conditions was proved.

  17. Evaluation of the indium gallium nitride/silicon broken-gap heterojunction and its potential application for solar cells

    Science.gov (United States)

    Yao, Yuan

    InGaN (especially In-rich alloy) has been actively studied for decades since the band gap of InN was revised downward from ˜2.0 eV to 0.64 eV. The potential applications for alloys of In-rich InGaN hence became apparent. Despite the promising potential, photovoltaic devices based on InGaN have struggled due to a number of key limitations and fundamental physical problems. Firstly, due to the deep excursion of the InN conduction band at the gamma point, defects in InN are almost universally n-type leading to unintentional degenerate doping. This also leads to the problem of electron accumulation at all surfaces and interfaces of InN. Secondly, p-type doping is problematic, partially due to the degenerate doping effect of defects, but it has also been observed that Mg-doping, while leading to a p-type layer, dramatically reduces the quantum efficiency. This thesis explores an alternative approach using n-type InGaN to form a heterojunction with a p-type Si substrate. One potential benefit to using p-type Si as a substrate material for InGaN is that the valence band of Si possibly lines up with the conduction band of InGaN for a specific mole fraction of indium. Such a band alignment is known as a broken gap heterojunction, an example of which is the interface between InAs and AlxGa 1--xSb. The benefits of this broken-gap junction include a low series resistance, high electron mobility, and mobility only weakly dependent on temperature. These properties enable new approach to photovoltaic devices. The InGaN/Si heterojunctions were fabricated by plasma-assisted molecular beam epitaxy under stoichiometric flux conditions. An ultra-thin SiN interface layer was introduced, by Si nitridation process, to passivate the substrate surface and prevent In-Si and Ga-Si eutectic problems. InGaN films with a variety of indium mole fractions were grown by calibrating the In/Ga flux ratio during the deposition. The chemical composition of as-grown films was characterized by x

  18. Si3N4/SiC/环氧树脂纳米导热复合材料的制备%Preparation of silicon nitride/silicon carbide whisker/epoxy resin thermal conductive nanocomposites

    Institute of Scientific and Technical Information of China (English)

    王明明; 张炜巍

    2012-01-01

    The epoxy resin thermal conductive composites were prepared with micro-silicon nitride/nano-silicon carbide whisker (Si3N4/SiC) hybrid fillers modified with silane coupling agent of KH -560.The influence of epoxy resin type, con tent and ratio of S3,N4/SiC,and surface modification on the thermal conductivity,mechanical ant! dielectric properties of the epoxy resin were investigated.The thermal conductivity of the epoxy resin composites increased with increasing the content of Si3N4/SIC hybrid fillers.And the thermal conductivity coefficient was 0.98 W/mK for 50 wt% Si3N4/SiC hybrid fillers (mass fraction, Si3N4/SiC =3/1).The dielectric constant of the epoxy resin composites increased with increasing the content of Si3/N4SiC hybrid fillers,however,the flexural and impact strength of the composites increased firstly,but decreased with excessive addition of Si3N4/SiC hybrid fillers.%以硅烷偶联剂KH-560改性的微米氮化硅/纳米碳化硅晶须(Si3N4/SiCw)为导热填料,浇注制备Si3N4/SiC/环氧树脂纳米导热复合材料.研究了环氧树脂种类、Si3N4/SiCw用量、复配比及表面改性对环氧树脂导热、力学和介电性能的影响.结果表明,环氧树脂的热导率随Si3N4/SiCw用量的增加而增大,当改性Si3N4/SiCw用量为50%[m(Si3N4) /m(SiCw)]=3/1时,环氧树脂的热导率为0.98 W/(m· K);复合材料的介电常数随Si3N4/SiCw用量的增加而增大,而力学性能则先增加后降低.

  19. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

    Directory of Open Access Journals (Sweden)

    Tománek P.

    2013-05-01

    Full Text Available The objective of the study is a growth of SiC/(SiC1−x(AlNx structures by fast sublimation epitaxy of the polycrystalline source of (SiC1−x(AlNx and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes. The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

  20. Transformation-Toughened Silicon Nitride

    Science.gov (United States)

    1988-08-01

    of pores, could be eliminated by iso - statically pressing the green flexure test bars after the burnout operation and before the sintering...Mehrotra Kennametal, Inc. PO Box 639 Greensburg, PA 15601 Joseph J. Meindl Reynolds International, Inc. PO Box 27002 6603 West Broad Street Richmond

  1. Research Progress of Cu-base Brazing Filler Metals for Brazing Silicon Nitride Ceramics%钎焊氮化硅陶瓷的 Cu 基钎料的研究进展

    Institute of Scientific and Technical Information of China (English)

    栗慧

    2014-01-01

    陶瓷连接技术是结构陶瓷实用化的有效手段,焊料成分对连接体的性能具有决定性作用。文章主要从焊料成分的角度,重点总结了钎焊Si3 N4陶瓷的Cu基钎焊材料的发展现状。%Joining technology of silicon nitride based materials is the most effective means for practical application.The chemical composition of adhesive has significant influence on the joining strength.The re-cent development in brazing of Si3 N4 ceramics Cu-base brazing fillers is emphatically reviewed in this paper from the point of chemical composition.

  2. POLYETHYLENE GLYCOL 400 APPLIED IN AQUEOUS SILICON NITRIDE SUSPENSIONS IN GEL-CASTING%聚乙二醇400在氮化硅凝胶注模悬浮液中的应用

    Institute of Scientific and Technical Information of China (English)

    庞学满; 徐明霞; 梁辉; 李晓雷; 季惠明

    2008-01-01

    Polyethylene glycol 400 was used as wetting reagent for highly concentrated aqueous silicon nitride suspensions. The aim was to increase the solid loading of suspensions with low viscosity at normal processing conditions. Viscosity, hygrometric and ab-sorption measurements were carried out to research the wetting properties of the reagent in silicon nitride suspensions at high solid loading. The results show that the relative viscosity of the suspensions is decreased by using the wetting reagent PEG400, especially at solid loading of 60%(in volume). A model was established for particles in solution as spheres with equal diameter and sufficient packing to explain the function of PEG400.%聚乙二醇400(polyethylene glycol 400,PEG400)作为润湿剂用于制备高浓度氮化硅悬浮液,以简单的工艺,在降低料浆黏度的同时提高其固相含量.为表征润湿剂对高固相含量下氮化硅悬浮液的润湿特性,测试了其黏度及在润湿剂作用下的润湿性和吸附特性.结果表明:当悬浮液固相含量高达60%(体积分数)时,在PEG400作用下其黏度可以显著降低.基于悬浮液中颗粒堆积形式,建立了等径密堆双球模型,阐释了PEG400作用机理.

  3. Effect of Aluminium Powder on Microstructure and Property of Corundum-Silicon Nitride Composites%铝粉对刚玉-氮化硅复合材料微观结构和性能的影响

    Institute of Scientific and Technical Information of China (English)

    魏军从; 涂军波

    2011-01-01

    借鉴"过渡塑性相工艺"思想,在刚玉-氮化砖复合材料中引入12.5%(质量分数)的铝粉,研究了铝粉对刚玉-氮化硅复合材料成型性能以及1 600℃空气中烧成后样品的体积密度、显气孔率和耐压强度的影响:利用X射线衍射仪和扫描电镜对材料的物相和微观结构进行了分析.结果表明:在刚玉-氮化硅复合材料中引入铝粉,有利于成型过程中孔隙的填充,坯体显气孔率由21.57%下降为20.42%,坯体致密度提高.样品在空气气氛中烧成后,未加铝粉样品表面形成的致密氧化膜厚度约为3mm,而加入铝粉样品表面氧化膜的厚度约为0.2mm;铝粉先于氮化硅粉发生原位氧化,降低了样品内部的氧分压,残留的铝粉发生氧化或氮化反应生成活性中间产物,促进了样品的烧结.%Corundum-silicon nitride samples were sintered at 1 600 ℃ in air by introduction of 12.5% (in mass) aluminium powder inspired by a transient plastic phase process. Effects of aluminium powder on the forming property as well as bulk density, apparent porosity, and compressive strength of the samples were investigated. The phase composition and microstructure of the reaction products were analysed by X-ray diffractometer and scanning electron microscope. The results indicate that the plasticity of aluminium favors the filling of the interstices during the forming process and improves the densification of the corundum-silicon nitride materials. The apparent porosity decreases from 21.75% to 20.42%. The samples without introduction of any aluminum powder have a compact superficial oxidized film of 3 mm, and the samples with the introduction of aluminum powder have the film of 0.2 mm after fired in air atmosphere. Aluminium precedes silicon nitride to be oxidized in situ, reducing the oxygen partial pressure inside the sample.The residual aluminium is oxidized or nitrided to form the active intermediate products, contributing to the sinter of the

  4. Dense Breasts

    Science.gov (United States)

    ... also appear white on mammography, they can be hidden by or within dense breast tissue. Other imaging ... understanding of the possible charges you will incur. Web page review process: This Web page is reviewed ...

  5. Crystalline boron nitride aerogels

    Science.gov (United States)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  6. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  7. 三维打印结合反应烧结制备多孔氮化硅陶瓷%Porous Silicon Nitride Ceramics Prepared by 3D Printing and Reaction Sintering

    Institute of Scientific and Technical Information of China (English)

    翁作海; 曾庆丰; 谢聪伟; 彭军辉; 张瑾

    2013-01-01

    Using silicon powder as starting material and dextrin as binder, porous silicon green body was prepared via 3D printing technology, and then highly porous silicon nitride ceramic was obtained by reaction sintering. The influence of sintering process on the property of the 3DP porous Si3N4 was investigated. The results show that, when the silicon green body was prepared by the 3D printer followed by the step-by-step heating process, porous Si3N4 ceramic with flexural strength of (5. 1 + 0. 3) MPa and porosity of (74. 3 + 0. 6) % was obtained. After reaction sintering, the linear shrinkages of the samples were smaller than 2. 0%. Ceramic parts with complex shapes can be ma-nufactured by such hybrid 3DP and reaction sintering technology with free-form and near-net-shape features.%以硅粉(Si)为起始原料,糊精为粘结剂,采用三维打印(3DP)快速成型技术制备出多孔硅坯体,通过反应烧结得到高孔隙率的氮化硅(Si3N4)陶瓷.研究了反应烧结工艺对3DP多孔Si3N4陶瓷性能的影响.结果表明:3DP成型的硅坯体采用阶梯式升温机制,可得到抗弯强度为(5.1±0.3)MPa,孔隙率达(74.3±0.6)%的多孔Si3 N4陶瓷.反应烧结后,样品的线收缩率小于2.O%.三维打印结合反应烧结法实现了复杂形状陶瓷构件的无模制造与净尺寸成型.

  8. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  9. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  10. Ultrafast optical signal processing on silicon-based platforms

    Science.gov (United States)

    Tan, Dawn T. H.

    2016-03-01

    The development of silicon - based photonic components and systems has advanced tremendously over the last decade, largely for applications in optical interconnects. The role of silicon - based platforms for both linear and nonlinear optics remains highly pertinent because of their ability to be integrated with CMOS - based electronics. In this paper, we present recent research progress pertaining to ultrafast optical signal processing on silicon - based platforms. Advances in on - chip multiplexing strategies with the potential for meeting 200GHz dense wavelength division multiplexing standards across the C - and L - bands will be discussed. In addition, the development of a silicon - based nonlinear optics platform with high nonlinear figures of merit will be presented. Nonlinear optical devices fabricated from the developed platform possess nonlinear parameters 500 times larger than that in silicon nitride waveguides, while possessing negligible nonlinear losses at 1.55μm. Ultra - broadband, low power nonlinear wavelength generation using these devices, as well as their potential for realizing advanced light sources for optical interconnect - based applications will be presented.

  11. Titanium nitride based hybrid plasmonic-photonic waveguides for on-chip plasmonic interconnects

    Science.gov (United States)

    Dutta, A.; Saha, S.; Kinsey, N.; Guler, U.; Shalaev, V. M.; Boltasseva, A.

    2017-02-01

    Over the past few decades, photonic technologies have emerged as a promising technology for data communications. They offer advantages such as high data bandwidths at comparable or even lower power consumption than electronics. However, photonic integrated circuits suffer from the diffraction limit of light which is a major obstacle in achieving small device footprints and densely packed on-chip interconnects. In recent years, plasmonics has emerged as a possible solution for densely packed on-chip nanophotonic circuitry. The field of plasmonics deals with oscillations of free electrons in a metal coupled to an electromagnetic field. The large wave-vector associated with these oscillations enables light to be localized in volumes much smaller than the diffraction limit. Consequently, there have been many demonstrations of plasmonic interconnects for on-chip communications, using well known metals such as gold and silver. However these materials are not CMOS compatible and hence their use is not technologically feasible. The growing need for plasmonic materials which are robust, cost-effective, and CMOS-compatible has led to the study of alternate plasmonic materials. For the visible and near infrared ranges, transition metal nitrides have been shown to be suitable metals for plasmonic applications These materials have optical properties comparable to that of gold and are CMOS-compatible, hence, they can be easily integrated into a silicon platform for on-chip applications. In this work, we demonstrate titanium nitride based plasmonic interconnects in an all-solid state geometry which can be easily integrated on a silicon platform.

  12. Hydrothermal growth and characterization of vertically well-aligned and dense ZnO nanorods on glass and silicon using a simple optimizer system

    Energy Technology Data Exchange (ETDEWEB)

    Mohammad, Sabah M., E-mail: Sabahaskari14@gmail.com; Ahmed, Naser M.; Abd-Alghafour, Nabeel M. [Institute of Nano-Optoelectronics Research and Technology Laboratory (INOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Hassan, Z., E-mail: zai@usm.my [Institute of Nano-Optoelectronics Research and Technology Laboratory (INOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); CRI Natural Sciences, Universiti Sains Malaysia, Penang 11800 (Malaysia); Talib, Rawnaq A. [Institute of Nano-Optoelectronics Research and Technology Laboratory (INOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Polymer Research Center, University of Basra (Iraq); Omar, A. F. [School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

    2016-07-06

    Vertically, well-aligned and high density ZnO nanorods were successfully hydrothermally grown on glass and silicon substrates using a simple and low cost system. The mechanism of synthesis of ZnO nanorods, generated with our system under hydrothermal conditions, is investigated in this report. Field-emission scanning electron microscopy indicated that the fabricated ZnO nanorods on both substrates have hexagonal shape with diameters ranging from 20 nm to 70 nm which grew vertically from the substrate. XRD analysis confirms the formation of wurtzite ZnO phase with a preferred orientation along (002) direction perpendicular on the substrate and enhanced crystallinity. The low value of the tensile strain (0.126 %) revealed that ZnO nanorods preferred to grow along the c-axis for both substrates. Photoluminescence spectra exhibited a strong, sharp UV near band edge emission peak with narrow FWHM values for both samples.

  13. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  14. Si(111)衬底上生长GaN晶绳的研究%Formation of gallium nitride crystal string on silicon (111) substrate

    Institute of Scientific and Technical Information of China (English)

    曹文田; 孙振翠; 魏芹芹; 薛成山; 王强

    2003-01-01

    利用热壁化学气相沉积在Si(111)衬底上获得GaN晶绳,采用傅里叶红外吸收谱(FTIR)、扫描电子显微镜(SEM)、选区电子衍射(SAED)、X射线衍射(XRD)和光致发光谱(PL)对晶绳进行组成、结构、形貌和光学特性分析.初步结果证明:在Si(111)衬底上获得择优生长的六方纤锌矿结构的GaN晶绳.SEM显示在均匀的薄膜上出现6μm的晶绳,FTIR显示GaN薄膜的主要成分为GaN同时含有少量的C污染,由XRD和SAED的综合分析得出晶绳呈六方纤锌矿单晶结构,PL测试表明晶绳呈现不同于GaN薄膜的发光特性.%GaN crystal string was deposited on Si (111) substrate by hot- wall chemical vapor depo- sition. Fourier Transform Infrared Transmission (FTIR) Spectroscopy, Scanning Electron Microscopy (SEM), Selected Area Electron Diffraction (SAED), X- Ray Diffraction (XRD) and Photoluminescence (PL) spectroscopy were employed to analyze the composition, surface morphology, structure, and optical property of GaN layer. FTIR pattern shows the main composition of the film is GaN and it contains trifle carbon contamination. SEM images show a crystal string with a diameter of 6μ m appears in the uniform film. XRD, SAED patterns reveal that the formed string is single- crystalline hexagonal gallium nitride. New feature is found in PL pattern of the crystal string, which is different from the bulk GaN films.

  15. 含硅聚硼氮烷裂解转化制备氮化硼陶瓷纤维%Preparation of Boron Nitride Ceramic Fibers by Pyrolysis of Silicon-containing Polyborazine

    Institute of Scientific and Technical Information of China (English)

    李文华; 王军; 谢征芳; 王浩; 唐云

    2012-01-01

    以低活性含硅聚硼氮烷为先驱体,经熔融纺丝,BCl3脱硅不熔化处理以及在氨气气氛中高温裂解制备的氮化硼纤维仍含有硅元素,这主要是含硅聚硼氮烷结构中的B-N(SiMe3)2和B-N(SiMe3)-B由于位阻与BCl3反应脱除SiMe3不完全所致.而采用HCl首先与含硅聚硼氮烷反应减少其位阻,再通过BCl3进一步脱硅不熔化处理制备的氮化硼陶瓷纤维经FT-IR、X射线衍射(XRD)分析表明纤维基本不含硅元素,并且扫描电子显微镜(SEM)表明得到的氮化硼陶瓷纤维直径约为11μm,断面致密无孔,室温下抗拉强度为0.45 GPa.%ilicon still exists in boron nitride(BN) ceramic fibers which were prepared by melt-spinning,curing with BCl3 and pyrolysis under NH3 of a preceramic silicon-containing polyborazine.That is because B-N(SiMe3)2 and B-N(SiMe3)-B could not react with BCl3 completely for the steric hindrance.So HCl was used to react with silicon-containing polyborazine first to reduce its steric hindrance.Then,BCl3 reacted with silicon-containing polyborazine to remove the residual SiMe3.After pyrolysis under NH3,BN ceramic fibers without silicon were obtained which was proved by FT-IR and X-ray diffraction.The obtained BN ceramic fibers with diameter of about 11 μm were dense which was demonstrated by scanning electron mi-croscopy(SEM) and the fibers showed room temperature mechanical property with average tensile strength of 0.45 GPa.

  16. Optimized the Parameters in Process of PECVD Deposition Silicon Nitride Film%PECVD氮化硅薄膜工艺参数研究

    Institute of Scientific and Technical Information of China (English)

    张树明; 廖华; 何京鸿; 尹云坤; 胡俊涛; 罗群

    2011-01-01

    According to the structure of solar modules and the performance of encapsulating material, the best antireflection film thickness and refractive index have been designed for silicon solar cell, and the technical parameters have been optimized with TAYLOR formula. Through the experiments, the good deposition parameters have been obtained for CETC-48th tube PECVD equipment.%根据太阳电池组件的结构和封装材料特性,设计出硅太阳电池片减反射薄膜的最佳厚度和折射率,利用泰勒公式进行优化PECVD制备氮化硅薄膜的工艺参数.通过实验,找出适合中电48所工业生产用管式PECVD制备氮化硅薄膜的工艺参数.

  17. Nitridation in Photon-Assisted Process Using Argon Excimer Lamp

    Science.gov (United States)

    Toshikawa, Kiyohiko; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi; Kurosawa, Kou

    2006-05-01

    We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH4) and nitrides the silicon with ammonia (NH3) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp (λ=126 nm, h ν=9.8 eV) so that SiH4 and NH3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.

  18. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  19. Contact pin-printing of albumin-fungicide conjugate for silicon nitride-based sensors biofunctionalization: Multi-technique surface analysis for optimum immunoassay performance

    Science.gov (United States)

    Gajos, Katarzyna; Budkowski, Andrzej; Tsialla, Zoi; Petrou, Panagiota; Awsiuk, Kamil; Dąbczyński, Paweł; Bernasik, Andrzej; Rysz, Jakub; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios

    2017-07-01

    Mass fabrication of integrated biosensors on silicon chips is facilitated by contact pin-printing, applied for biofunctionalization of individual Si3N4-based transducers at wafer-scale. To optimize the biofunctionalization for immunochemical (competitive) detection of fungicide thiabendazole (TBZ), Si3N4 surfaces are modified with (3-aminopropyl)triethoxysilane and examined after: immobilization of BSA-TBZ conjugate (probe) from solutions with different concentration, blocking with bovine serum albumin (BSA), and immunoreaction with a mouse monoclonal antibody against TBZ. Nanostructure, surface density, probe composition and coverage uniformity of protein layers are evaluated with Atomic Force Microscopy, Spectroscopic Ellipsometry, Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy. Contact pin-printing of overlapping probe spots is compared with hand spotted areas. Contact pin-printing resulted in two-fold increase of immobilized probe surface density as compared to hand spotting. Regarding BSA-TBZ immobilization, an incomplete monolayer develops into a bilayer as the concentration of BSA-TBZ molecules in the printing solution increases from 25 to 100 μg/mL. Upon blocking, however, a complete protein monolayer is formed for all the BSA-TBZ concentrations used. Free surface sites are filled with BSA for low surface coverage with BSA-TBZ, whereas loosely bound BSA-TBZ molecules are removed from the BSA-TBZ bilayer. As a consequence immunoreaction efficiency increases with the printing probe concentration.

  20. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  1. Fabrication of silicon nitride/boron nitride nanocomposite powder

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Si3N4/BN nanocomposite powders with the microstructure of the micro-sized α-Si3N4 particles coated with nano-sized BN particles were synthesized via the chemical reaction of boric acid, urea, and α-Si3N4 powder in a hydrogen gas. The results of XRD, TEM, and selected area electron diffraction showed that amorphous BN and a little amount of turbostratic BN(t-BN) were coated on Si3N4 particles as the second phase after reaction at 1100℃. After reheating the composite powders at 1450℃ in a nitrogen gas, the amorphous and turbostratic BN is transformed into h-BN. These nanocomposite powders can be used to prepare Si3N4/BN ceramic composites by hot-pressing at 1800℃, which have perfect machinability and can be drilled with normal metal tools.

  2. 氮化硅基多孔陶瓷的制备技术、孔隙结构及其相关性能%Silicon Nitride Based Porous Ceramics:Preparation Technologies, Porous Structure and Properties

    Institute of Scientific and Technical Information of China (English)

    苏睿; 黄志锋; 李飞宇; 陈斐; 沈强

    2016-01-01

    氮化硅多孔陶瓷是近年来得到广泛关注的一类新型的结构-功能一体化陶瓷材料,在航空航天、机械、化工、海洋工程等重要领域有着广阔的应用前景。本文介绍了氮化硅基多孔陶瓷的主要制备技术,回顾了氮化硅基多孔陶瓷力学性能和介电性能的研究进展。考虑到高孔隙率氮化硅基多孔陶瓷力学性能难以提高,磷酸盐结合氮化硅基多孔陶瓷已经逐渐成为新的研究热点,因此,本文进一步对磷酸盐结合氮化硅基多孔陶瓷的制备技术、力学性能、介电性能、热学性能进行了综合评述,并对氮化硅基多孔陶瓷的应用前景进行了展望。%Silicon nitride porous ceramics is an advanced type of structure –function integration ceramic materials which is popular in recently, and it has profound application prospect in aerospace, machinery, chemistry, oceanographic engineering and other significant domain. In this article, the main preparation technologies of porous Si3N4 ceramics have been summarized, and the research progress about the mechanical and dielectric properties of porous Si3N4 ceramics have been reviewed in this paper. Further, consider about the problem that it is hard to improve the mechanical properties of porous Si3N4 ceramics with high porosity, the research hotspot is moving on porous Si3N4 ceramics with phosphate binder. Therefore, their preparation technologies, mechanical, dielectric and thermal properties have been analyzed in further, and the potential application of porous Si3N4 ceramics was discussed.

  3. Preparation of silicon nitride/carbon fibre/epoxy resin composites%氮化硅/碳纤维/环氧树脂复合材料的制备研究

    Institute of Scientific and Technical Information of China (English)

    王明明; 张炜巍

    2013-01-01

    The silicon nitride (Si3N4) microparticles before and after modification were employed to prepare Si3N4/carbon fibre/epoxy resin (Si3N4/CF/EP) composite via high temperature molding press method.The effects of the mass fraction and surface modification of Si3N4 on the thermal conductivity,electrical properties and mechanical properties of the composite were investigated.The results showed that for the Si3N4/CF/EP composite its thermal conductivity increased with increasing the mass fraction of Si3N4,and the thermal conductivity was 1.02 W/mK when the mass fraction of Si3N4 was 40%.The electrical properties of the composite decrease linearly with increasing the mass fraction of Si3N4.The mechanical properties of the composite increased firstly and then decreased with adding of Si3N4.The thermal conductivity and mechanical properties of the composite were further improved after the modification of Si3N4.%采用高温模压成型法制备氮化硅/碳纤维/环氧树脂导热复合材料(Si3N4/CF/EP).研究了Si3N4用量和表面改性对Si3N4/CF/EP复合材料导热性能、导电性能和力学性能的影响.结果表明,复合材料的导热性能随Si3N4质量分数的增加而增大,当Si3N4质量分数为40%时,导热率为1.02 W/mK;而Si3N4/CF/EP复合材料的导电率随Si3N4质量分数的增加而呈线性降低;力学性能则随Si3N4质量分数的增加先增大后降低.表面改性有助于进一步提高Si3N4/CF/EP复合材料的导热性能和力学性能.

  4. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  5. Methods of forming boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  6. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  7. III-nitride grown on freestanding GaN nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongjin; Zhu, Hongbo [Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003 (China); Hu, Fangren; Hane, Kazuhiro [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2012-03-15

    We report here the epitaxial growth of III-nitride on the freestanding GaN nanostructures by molecular beam epitaxy growth. Various GaN nanostructures are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN nanostructures is removed from the backside to form the freestanding GaN slab, and the epitaxial growth of III-nitride by MBE is performed on the prepared GaN template. The selective growth takes place with the assistance of GaN nanostructures and generates hexagonal III-nitride pyramids. Thin epitaxial structures, depending on the shape and the size of GaN nanostructure, can produce the promising optical performance. This work opens the way to combine silicon micromachining with the epitaxial growth of III-nitride by MBE on GaN-on-silicon substrate for further integrated optics (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Thermodynamic and kinetic studies on the deposition of silicon carbon nitride from CH{sub 3}SiCl{sub 3}–C{sub 3}H{sub 6}–NH{sub 3}–H{sub 2}–Ar and its excellent electromagnetic absorbing property

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Fang; Zhang, Litong; Yin, Xiaowei, E-mail: yinxw@nwpu.edu.cn; Liu, Xiaofei; Liu, Yongsheng; Xue, Jimei; Cheng, Laifei

    2014-03-15

    Highlights: • SiCN was prepared from MTS–C{sub 3}H{sub 6}–NH{sub 3}–H{sub 2}–Ar by CVI. • SiCN realized the designable composition by adjusting the reactant concentration. • SiCN with optimized composition had low ε and high tgδ. • SiCN with optimized composition realized a good wave-absorbing property. -- Abstract: Thermodynamics phase diagram of co-deposited C, SiC and Si{sub 3}N{sub 4} from precursors of CH{sub 3}SiCl{sub 3}–C{sub 3}H{sub 6}–NH{sub 3}–H{sub 2}–Ar was investigated by using FactSage software and its embedded database. The yield of condensed phases in the co-deposition process was examined as the functions of the inject reactant ratios of C{sub 3}H{sub 6}/MTS, NH{sub 3}/MTS and H{sub 2}/MTS, and the temperature at a fixed pressure of 0.01 atm. The thermodynamic study was used to conduct and determine the deposition condition of silicon carbon nitride (SiCN) in the experimental process. The results show that C–SiC, C–SiC–Si{sub 3}N{sub 4} and C–Si{sub 3}N{sub 4} can be co-deposited by adjusting the reactant ratios and temperature in thermodynamics. In kinetics, SiCN ternary phase was successfully deposited in the porous Si{sub 3}N{sub 4} preform by chemical vapor infiltration and chemical vapor deposition when T = 800 °C, P = 0.01 atm, [NH{sub 3}]/[MTS] = 0.5 and [C{sub 3}H{sub 6}]/[MTS] = 0.2–0.6. The surface morphology of the as-prepared SiCN presented the dense convex cell structure, and the rod-like Si{sub 3}N{sub 4} in preform was uniformly covered by SiCN. The dielectric and electromagnetic (EM) properties of Si{sub 3}N{sub 4}–SiCN ceramics were evaluated in 8.2–12.4 GHz (X-band). With the increase of [C{sub 3}H{sub 6}]/[MTS] in the precursors, the content of carbon element and the intensity of Si–C bond in SiCN gradually increased, which made the permittivity, dielectric loss and EM shielding effectiveness of ceramics gradually increase and the EM reflection coefficient decrease. It is confirmed that

  9. Doped and Undoped Zinc Oxide Nanostructures on Silicon Wafers

    Science.gov (United States)

    Chubenko, E.; Bondarenko, V.

    2013-05-01

    We present results of hydrothermal deposition of undoped and Al doped ZnO nanocrystals on nanocrystalline silicon. ZnO nanocrystals were deposited in an equimolar zinc nitride and hexamethylenetetramine solution. Aluminum nitride was used as Al precursor. The difference of the morphology of doped and undoped ZnO nanocrystals is discussed. Photoluminescence properties of the obtained nanocrystals are shown.

  10. Group-III Nitride Field Emitters

    Science.gov (United States)

    Bensaoula, Abdelhak; Berishev, Igor

    2008-01-01

    Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude

  11. 氮气压力对多孔氮化硅陶瓷显微组织和力学性能的影响%Effects of Nitrogen Pressure on Microstructure and Mechanical Performance of Porous Silicon Nitride Ceramics

    Institute of Scientific and Technical Information of China (English)

    张俊禧; 徐照芸; 王波; 秦毅; 杨建锋; 赵中坚; 胡伟; 施志伟

    2014-01-01

    Porous silicon nitride ceramic was fabricated by usingα-Si3N4 as raw material and Y2O3 as a sintering ad-ditive, with nitrogen pressure of 0.12 MPa, 0.32 MPa and 0.52 MPa. Effects of the nitrogen pressure on grain mor-phology and mechanical properties of the resultant porous Si3N4 ceramics were characterized by SEM, XRD and flex-ural strength. With the increasing of nitrogen pressure, sintering shrinkage decreased, with a corresponding increased porosity. Due to the increase of nitrogen pressure, the viscosity of liquid phase increased due to increased N solubility, leading to the low densification in the sintering. Fibrousβ-Si3N4 grains were developed in the porous microstructure and the grain morphology and aspect ratio were greatly affected by the nitrogen pressures. The high viscosity of the liquid phase in nitrogen at high pressure led to restraining of theβ-Si3N4 nucleation, and preferential growth ofβ-Si3N4. Due to the formation of elongatedβ-Si3N4, flexural strength of the porous Si3N4 ceramic was improved by the increase of nitrogen pressure, while decreased with the increase of porosity. The porous Si3N4 ceramics with porosity of 58%and flexural strength of 140 MPa were obtained at the nitrogen pressure of 0.52 MPa.%以α-Si3N4为原料, Y2O3为烧结助剂,在三种不同的氮气压力(0.12、0.32和0.52 MPa)下烧结制备了多孔氮化硅陶瓷。研究了氮气压力对氮化硅的烧结行为、显微组织和力学性能的影响,分别通过SEM观察显微组织并统计晶粒的长径比,通过 XRD 对物相进行分析,并对烧结试样进行三点弯曲强度测试。随着氮气压力的提高,多孔陶瓷的线收缩率降低、气孔率提高,这是由于低熔点的液相中N含量随氮气压力的提升而增加,导致了液相粘度提高,抑制陶瓷致密化。随着氮气压力的提高,组织中的棒状β-Si3N4生长良好,晶粒长径比增大,其原因是高的液相粘度抑制了β-Si3N4

  12. Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Satish; Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in [International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2016-02-07

    We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses. The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.

  13. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  14. Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

    Science.gov (United States)

    Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

    2013-05-20

    We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

  15. A high-Tc superconductor bolometer on a silicon nitridemembrane

    NARCIS (Netherlands)

    Sanchez, S.; Elwenspoek, M.C.; Gui, C.; Nivelle, de M.J.M.E.; Vries, de R.; Korte, de P.A.J.; Bruijn, M.P.; Schwierzi, B.

    1997-01-01

    In this paper we describe the design, fabrication and performance of a high-Tc GdBa2Cu3O7-δ superconductor bolometer positioned on a 2×2 mm2, 1 μm thick silicon nitride membrane. The bolometer structure has an effective area of 0.64 mm2 and was grown on a specially developed silicon-on-nitride layer

  16. Analysis of the properties of silicon nitride based ceramic (Si{sub 3}N{sub 4}) cutting tool using different addictive; Analise das propriedades de ferramenta de corte ceramicas de nitreto de silicio (Si{sub 3}N{sub 4}) usando diferentes aditivos

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Silva, Oliverio Macedo Moreira [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil)

    2013-06-15

    The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si{sub 3}N{sub 4}) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si{sub 3}N{sub 4}) using different additives such as Y{sub 2}O{sub 3}, CeO{sub 2}, Al{sub 2}O{sub 3} , and CTR{sub 2}O{sub 3} in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m{sup 1/2}. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)

  17. Dense topological spaces and dense continuity

    Science.gov (United States)

    Aldwoah, Khaled A.

    2013-09-01

    There are several attempts to generalize (or "widen") the concept of topological space. This paper uses equivalence relations to generalize the concept of topological space via the concept of equivalence relations. By the generalization, we can introduce from particular topology on a nonempty set X many new topologies, we call anyone of these new topologies a dense topology. In addition, we formulate some simple properties of dense topologies and study suitable generalizations of the concepts of limit points, closeness and continuity, as well as Jackson, Nörlund and Hahn dense topologies.

  18. Gallium nitride optoelectronic devices

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  19. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  20. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  1. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  2. Effect of plasma nitriding and titanium nitride coating on the corrosion resistance of titanium.

    Science.gov (United States)

    Wang, Xianli; Bai, Shizhu; Li, Fang; Li, Dongmei; Zhang, Jing; Tian, Min; Zhang, Qian; Tong, Yu; Zhang, Zichuan; Wang, Guowei; Guo, Tianwen; Ma, Chufan

    2016-09-01

    The passive film on the surface of titanium can be destroyed by immersion in a fluoridated acidic medium. Coating with titanium nitride (TiN) may improve the corrosion resistance of titanium. The purpose of this in vitro study was to investigate the effect of duplex treatment with plasma nitriding and TiN coating on the corrosion resistance of cast titanium. Cast titanium was treated with plasma nitriding and TiN coating. The corrosion resistance of the duplex-treated titanium in fluoride-containing artificial saliva was then investigated through electrochemical and immersion tests. The corroded surface was characterized by scanning electron microscopy (SEM) with energy-dispersive spectroscopy surface scan analysis. The data were analyzed using ANOVA (α=.05) RESULTS: Duplex treatment generated a dense and uniform TiN film with a thickness of 4.5 μm. Compared with untreated titanium, the duplex-treated titanium displayed higher corrosion potential (Ecorr) values (Pplasma nitriding and TiN coating significantly improved the corrosion resistance of cast titanium in a fluoride-containing environment. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  3. Nitride Semiconductors Handbook on Materials and Devices

    CERN Document Server

    Ruterana, Pierre; Neugebauer, Jörg

    2003-01-01

    Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of t

  4. Nitrogen Availability Of Nitriding Atmosphere In Controlled Gas Nitriding Processes

    Directory of Open Access Journals (Sweden)

    Michalski J.

    2015-06-01

    Full Text Available Parameters which characterize the nitriding atmosphere in the gas nitriding process of steel are: the nitriding potential KN, ammonia dissociation rate α and nitrogen availabilitymN2. The article discusses the possibilities of utilization of the nitriding atmosphere’s nitrogen availability in the design of gas nitriding processes of alloyed steels in atmospheres derived from raw ammonia, raw ammonia diluted with pre-dissociated ammonia, with nitrogen, as well as with both nitrogen and pre-dissociated ammonia. The nitriding processes were accomplished in four series. The parameters selected in the particular processes were: process temperature (T, time (t, value of nitriding potential (KN, corresponding to known dissociation rate of the ammonia which dissociates during the nitriding process (α. Variable parameters were: nitrogen availability (mN2, composition of the ingoing atmosphere and flow rate of the ingoing atmosphere (FIn.

  5. Preparation of High Strength Silicon Nitride Ceramic Fibers From Polycarbosilane Fibers byγ-Ray Irradiation and Thermal Cross-Linking%γ辐照联合热交联聚碳硅烷先驱丝热解制备高强度氮化硅陶瓷纤维

    Institute of Scientific and Technical Information of China (English)

    黎阳; 高家诚; 许云书

    2014-01-01

    在空气气氛中采用γ射线辐照处理聚碳硅烷(PCS)先驱丝,辐照先驱丝经 Ar中热交联、NH3中热解氨化、N2中高温氮化处理制备了氮化硅陶瓷纤维。研究了热交联处理对辐照先驱丝化学结构、凝胶含量、氨化陶瓷产率、抗拉强度、微观形貌及氧含量的影响。结果表明:热交联处理生成了 Si—CH2—Si 和 Si—O—Si 桥连结构,桥连结构使PCS先驱丝实现凝胶化;热交联处理不仅大幅提高了辐照 PCS先驱丝的氨化陶瓷产率,还提高了热解所得氮化硅陶瓷纤维的抗拉强度,而且还降低了陶瓷纤维的氧含量;吸收剂量为1.0 MGy的辐照丝经热交联处理后,其热解所得氮化硅陶瓷纤维抗拉强度达2.05 GPa,氧质量分数仅为9.5%。%Polycarbosilane (PCS)precursor fibers were irradiated byγ-ray in air.Silicon nitride ceramic fibers were obtained from the irradiated PCS fibers by process of thermal cross-linking treatment in Ar,ammoniation pyrolysis in NH3 and high temperature nitriding treatment in N2 .The effects of thermal cross-linking treatment on chemical structure,gel content,ammoniation ceramic yield,tensile strength,microstructure and oxygen content were studied.The results show that bridge structures of Si—CH2—Si and Si—O—Si are formed in the PCS fibers by thermal cross-linking treatment and make the PCS fibers become gelling.The ammoniation ceramic yield of the irradiated PCS fibers increases sharply after thermal cross-linking treatment.The tensile strength of the silicon nitride ceramic fibers increases sharply, while the oxygen content decreases. After thermal cross-linking treatment,the tensile strength of the silicon nitride ceramic fibers derived from the PCS fibers with absorbed dose of 1.0 MGy reaches 2.05 GPa and the oxygen mass fraction is 9.5%.

  6. The rapid nitriding of Al alloys with the controlling of plasma power density and pretreatments

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun Jun; Moon, Kyoung Il [Korea Institute of Industrial Technology, Cheonan (Korea, Republic of); Lee, Jae Seung; Choi, Yoon [A-Tech System, Seoul (Korea, Republic of)

    2010-05-15

    The properties of AlN make this material very attractive for optical, electronic, and tribological application. Also, if the AlN could be formed on the Al surface to enhance its surface properties, Al could be applied for the lightening of machine parts. However, a dense oxide film exists on the surface of Al, which prevents the formation of the Al nitride even during plasma nitriding and plasma coating process. In this study, plasma nitriding has been tried to form an AlN layer on Al after the surface activation processes. During the plasma nitriding, the density of the nitrogen ions was amplified by means of controlling the power of the Al substrates. The film thickness, microstructural features and the mechanical properties such as hardness and wear properties of the AlN layer were examined as a function of the process parameters of pretreatment and plasma nitriding

  7. Aluminum nitride for heatspreading in RF IC's

    Science.gov (United States)

    La Spina, L.; Iborra, E.; Schellevis, H.; Clement, M.; Olivares, J.; Nanver, L. K.

    2008-09-01

    To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

  8. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan;

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  9. Dense with Sense

    Science.gov (United States)

    Aletras, Anthony H.; Ingkanisorn, W. Patricia; Mancini, Christine; Arai, Andrew E.

    2005-09-01

    Displacement encoding with stimulated echoes (DENSE) with a low encoding strength phase-cycled meta-DENSE readout and a two fold SENSE acceleration ( R = 2) is described. This combination reduces total breath-hold times for increased patient comfort during cardiac regional myocardial contractility studies. Images from phantoms, normal volunteers, and a patient are provided to demonstrate the SENSE-DENSE combination of methods. The overall breath-hold time is halved while preserving strain map quality.

  10. Optical frequency comb generation from aluminum nitride micro-ring resonator

    CERN Document Server

    Jung, Hojoong; Fong, King Y; Zhang, Xufeng; Tang, Hong X

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coefficient (n2) of aluminum nitride is further extracted from our experimental results.

  11. Nitride quantum light sources

    Science.gov (United States)

    Zhu, T.; Oliver, R. A.

    2016-02-01

    Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.

  12. Raman Amplifier Based on Amorphous Silicon Nanoparticles

    Directory of Open Access Journals (Sweden)

    M. A. Ferrara

    2012-01-01

    Full Text Available The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.

  13. Atoms in dense plasmas

    Energy Technology Data Exchange (ETDEWEB)

    More, R.M.

    1986-01-01

    Recent experiments with high-power pulsed lasers have strongly encouraged the development of improved theoretical understanding of highly charged ions in a dense plasma environment. This work examines the theory of dense plasmas with emphasis on general rules which govern matter at extreme high temperature and density. 106 refs., 23 figs.

  14. Quantum dense key distribution

    CERN Document Server

    Degiovanni, I P; Castelletto, S; Rastello, M L; Bovino, F A; Colla, A M; Castagnoli, G C

    2004-01-01

    This paper proposes a new protocol for quantum dense key distribution. This protocol embeds the benefits of a quantum dense coding and a quantum key distribution and is able to generate shared secret keys four times more efficiently than BB84 one. We hereinafter prove the security of this scheme against individual eavesdropping attacks, and we present preliminary experimental results, showing its feasibility.

  15. Functional carbon nitride materials — design strategies for electrochemical devices

    Science.gov (United States)

    Kessler, Fabian K.; Zheng, Yun; Schwarz, Dana; Merschjann, Christoph; Schnick, Wolfgang; Wang, Xinchen; Bojdys, Michael J.

    2017-06-01

    In the past decade, research in the field of artificial photosynthesis has shifted from simple, inorganic semiconductors to more abundant, polymeric materials. For example, polymeric carbon nitrides have emerged as promising materials for metal-free semiconductors and metal-free photocatalysts. Polymeric carbon nitride (melon) and related carbon nitride materials are desirable alternatives to industrially used catalysts because they are easily synthesized from abundant and inexpensive starting materials. Furthermore, these materials are chemically benign because they do not contain heavy metal ions, thereby facilitating handling and disposal. In this Review, we discuss the building blocks of carbon nitride materials and examine how strategies in synthesis, templating and post-processing translate from the molecular level to macroscopic properties, such as optical and electronic bandgap. Applications of carbon nitride materials in bulk heterojunctions, laser-patterned memory devices and energy storage devices indicate that photocatalytic overall water splitting on an industrial scale may be realized in the near future and reveal a new avenue of 'post-silicon electronics'.

  16. Silicon Carbide Tiles for Sidewall Lining in Aluminium Electrolysis Cells

    Institute of Scientific and Technical Information of China (English)

    RUANBo; ZHAOJunguo; 等

    1999-01-01

    The paper introduces the nitride bonded silicon carbide used for sidewall lining in aluminium eletrolysis cells ,including technical process,main properties and application results.Comparison tests on various physical properties of silicon carbide products made by LIRR and other producers worldwide have also been conducted in an independent laboratory.

  17. Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel

    Directory of Open Access Journals (Sweden)

    Naiming Lin

    2016-10-01

    Full Text Available Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316, surface-textured 316 (ST-316, and duplex-treated 316 (DT-316 in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si3N4 balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication.

  18. Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel.

    Science.gov (United States)

    Lin, Naiming; Liu, Qiang; Zou, Jiaojuan; Guo, Junwen; Li, Dali; Yuan, Shuo; Ma, Yong; Wang, Zhenxia; Wang, Zhihua; Tang, Bin

    2016-10-27

    Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316), surface-textured 316 (ST-316), and duplex-treated 316 (DT-316) in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si₃N₄ balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication.

  19. Deflection and maximum load of microfiltration membrane sieve made with silicon micromachining

    NARCIS (Netherlands)

    Rijn, van Cees; Wekken, van der Michiel; Nijdam, Wietze; Elwenspoek, Miko

    1997-01-01

    With the use of silicon micromachining, an inorganic membrane sieve for microfiltration has been constructed having a silicon nitride membrane layer with thickness typically 1 ¿m and perforations typically between 0.5 ¿m and 10 ¿m in diameter. As a support a ¿100¿-silicon wafer with openings of 1000

  20. Mathematical Model of Silicon Oxidation in Microelectronics

    Directory of Open Access Journals (Sweden)

    V. A. Bondarev

    2006-01-01

    Full Text Available The paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. Suitable analytical and numerical solutions based on the diffusion equation have not yet been obtained