Studies of deep levels in He+-irradiated silicon

International Nuclear Information System (INIS)

Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

1997-01-01

Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

International Nuclear Information System (INIS)

Bum Park, Chang

2014-01-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔV T ) is presented by providing a ΔV T model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ∼1.8 and ∼2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time. (paper)

Methods in mooring deep sea sediment traps

Digital Repository Service at National Institute of Oceanography (India)

Venkatesan, R.; Fernando, V.; Rajaraman, V.S.; Janakiraman, G.

The experience gained during the process of deployment and retrieval of nearly 39 sets of deep sea sediment trap moorings on various ships like FS Sonne, ORV Sagarkanya and DSV Nand Rachit are outlined. The various problems encountered...

The effects of deep trap population on the thermoluminescence of Al{sub 2}O{sub 3}:C

Energy Technology Data Exchange (ETDEWEB)

Yukihara, E.G. E-mail: yukihara@thor.phy.okstate.edu; Whitley, V.H.; Polf, J.C.; Klein, D.M.; McKeever, S.W.S.; Akselrod, A.E.; Akselrod, M.S

2003-12-01

The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al{sub 2}O{sub 3}:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F{sup +}-centers. The data lead to the suggestion that the competing deep traps which become unstable at {approx}800-875 K are hole traps, and that the competing deep traps which become unstable at {approx}1100-1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.

Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Directory of Open Access Journals (Sweden)

Eugenijus Gaubas

2012-12-01

Full Text Available Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL and the photo-ionization spectroscopy (PIS implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

Science.gov (United States)

Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

2007-12-01

In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

Deep cooling of optically trapped atoms implemented by magnetic levitation without transverse confinement

Science.gov (United States)

Li, Chen; Zhou, Tianwei; Zhai, Yueyang; Xiang, Jinggang; Luan, Tian; Huang, Qi; Yang, Shifeng; Xiong, Wei; Chen, Xuzong

2017-05-01

We report a setup for the deep cooling of atoms in an optical trap. The deep cooling is implemented by eliminating the influence of gravity using specially constructed magnetic coils. Compared to the conventional method of generating a magnetic levitating force, the lower trap frequency achieved in our setup provides a lower limit of temperature and more freedoms to Bose gases with a simpler solution. A final temperature as low as ˜ 6 nK is achieved in the optical trap, and the atomic density is decreased by nearly two orders of magnitude during the second stage of evaporative cooling. This deep cooling of optically trapped atoms holds promise for many applications, such as atomic interferometers, atomic gyroscopes, and magnetometers, as well as many basic scientific research directions, such as quantum simulations and atom optics.

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

2016-03-07

Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

International Nuclear Information System (INIS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

2014-01-01

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10 17  cm −3 to (2–5) × 10 14  cm −3 . The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10 13  cm −3 versus 2.9 × 10 16  cm −3 in the standard samples, with a similar decrease in the electron traps concentration

Scanning ion deep level transient spectroscopy: I. Theory

International Nuclear Information System (INIS)

Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

2006-01-01

Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction

The injection spectroscopy method for the study of deep traps in CdTe films

International Nuclear Information System (INIS)

Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

1999-01-01

A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

Shallow trapping vs. deep polarons in a hybrid lead halide perovskite, CH3NH3PbI3.

Science.gov (United States)

Kang, Byungkyun; Biswas, Koushik

2017-10-18

There has been considerable speculation over the nature of charge carriers in organic-inorganic hybrid perovskites, i.e., whether they are free and band-like, or they are prone to self-trapping via short range deformation potentials. Unusually long minority-carrier diffusion lengths and moderate-to-low mobilities, together with relatively few deep defects add to their intrigue. Here we implement density functional methods to investigate the room-temperature, tetragonal phase of CH 3 NH 3 PbI 3 . We compare charge localization behavior at shallow levels and associated lattice relaxation versus those at deep polaronic states. The shallow level originates from screened Coulomb interaction between the perturbed host and an excited electron or hole. The host lattice has a tendency towards forming these shallow traps where the electron or hole is localized not too far from the band edge. In contrast, there is a considerable potential barrier that must be overcome in order to initiate polaronic hole trapping. The formation of a hole polaron (I 2 - center) involves strong lattice relaxation, including large off-center displacement of the organic cation, CH 3 NH 3 + . This type of deep polaron is energetically unfavorable, and active shallow traps are expected to shape the carrier dynamics in this material.

Identification of deep levels in GaN associated with dislocations

International Nuclear Information System (INIS)

Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

2004-01-01

To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

International Nuclear Information System (INIS)

Kaniewska, M.; Engstroem, O.

2007-01-01

Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10 15 cm -3 at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures

Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

Energy Technology Data Exchange (ETDEWEB)

Kaniewska, M. [Department of Analysis of Semicoductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: kaniew@ite.waw.pl; Engstroem, O. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

2007-09-15

Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10{sup 15} cm{sup -3} at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures.

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Energy Technology Data Exchange (ETDEWEB)

Polyakov, A. Y. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Smirnov, N. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Yakimov, E. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pearton, S. J. [University of Florida, Gainesville, Florida 32611 (United States)

2016-01-07

Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

2012-08-01

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Thermally assisted OSL from deep traps in Al2O3:C

International Nuclear Information System (INIS)

Polymeris, G.S.; Raptis, S.; Afouxenidis, D.; Tsirliganis, N.C.; Kitis, G.

2010-01-01

The present work suggests an alternative experimental method in order to not only measure the signal of the deep traps in Al 2 O 3 :C without heating the sample to temperatures greater than 500 o C, but also use this signal for high dose level dosimetry purposes as well. This method consists of photo transfer OSL measurements performed at elevated temperatures using the blue LEDs (470 nm, FWHM 20 nm) housed at commercial Riso TL/OSL systems, after the sample was previously heated up to 500 o C in order to empty its main TL dosimetric trap. The influence of this procedure on specific features such as glow curve shape and sensitivity of the main TL glow peak was also studied.

Thermoluminescent and dosimetric properties of anion-defective a-Al2O3 single crystals with filled deep traps

International Nuclear Information System (INIS)

Kortov, V.S.; Milman, I.I.; Nikiforov, S.V.

2002-01-01

Some new experimental results illustrating the effect of deep traps on luminescent and dosimetric properties of anion-defective single crystals of a-Al 2 O 3 have been described. It was found that deep traps had an electronic origin. They were filled thanks to the photoionisation of F-centres and their filling was accompanied by the conversion of FF+ centres. The experiments revealed an interactive interaction of deep trapping centres. A model taking into account the thermal ionisation of excited states of F-centres was proposed. This model describes the trap filling process and mechanisms of the radio-, photo- and thermoluminescence, TSC and TSEE of the crystals under study. The sensitivity of TLD-500 detectors based on anion-defective a-Al 2 O 3 equalised when deep trapping centres were filled. (author)

Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

International Nuclear Information System (INIS)

McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

2002-01-01

Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Science.gov (United States)

Dhar, S.; Das, U.; Bhattacharya, P. K.

1986-01-01

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

Science.gov (United States)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

DEEP HANGING WALL TRAPS-THE REMAINING PROMISSING TARGETS FOR OIL EXPLORATION IN THE NIGER DELTA

International Nuclear Information System (INIS)

Oton, S.W

2004-01-01

It is well known that the most dominant types of Hydrocarbon types found in the petroliferous Niger Delta are the classical rollover anticlinical traps 'I of oil exploration in the delta, these easy-to-find rollover structures are getting exhausted. They are most numerous at shallow depths in the younger delta front sedimentary sequence. Generally, during this primary oil exploration stage, oil and gas exploration have been concentrated in the shallow depths where they are easy to reach, easy to explore and easy to produce. This means that the present and future exploration campaigns in the Niger Delta should be directed towards other types of hydrocarbon trapping mechanisms that have been mapped in the delta. Many exploration models have been used and oil has been found in at least nine types of traps in the Niger Delta. The contrary (or anitithetic) fault model was used at the close of the last century. This model is so called because the controlling antithetic fault has a regional dip contrary to the structure-building growth fault with which it is associated. These faults, which are widespread in the Niger Delta, are easy to map especially on the Petro geological model. In this period, several promising hydrocarbon accumulations trapped against antithetic faults were discovered and tested. These hydrocarbon targets also seem fully explored and exhausted now. Recently, from modern high resolution 2-D and 3-D seismic data a lot of good prospects have been mapped and drilled in the deep horizon. In the last few years, a lot of unexplored oil have been discovered and tested in the deep horizons. They are mostly in hanging wall traps, at depth below 4,000 meters. This shows that most of the remaining undiscovered hydrocarbons in the Niger Delta may well be in these deep hanging wall traps between 4,000 and close to 5,600 meters. A definite search for deep-seated hanging wall traps is therefore recommended in a bid to find more new reservoirs and thereby increase the

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

International Nuclear Information System (INIS)

Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

2005-01-01

The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at E c -2.05 eV and a deep donor at E c -0.11 eV are newly reported states, and the latter is the first directly observed deep level attributed to the C Ga defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at E c -3.0 eV and E ν +0.9 eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at E c -3.0 and 3.28 eV had the largest concentration, implying that free-carrier compensation by these deep levels is responsible for the semi-insulating behavior of GaN:C:Si films grown by MBE. The differing manner by which C incorporation in GaN may impact electrical conductivity in films grown by MBE and metal-organic chemical-vapor deposition is discussed

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

2016-01-01

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

International Nuclear Information System (INIS)

Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

2000-01-01

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

Midgap traps related to compensation processes in CdTe alloys

International Nuclear Information System (INIS)

Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

1997-01-01

We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd 0.8 Zn 0.2 Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. copyright 1997 The American Physical Society

Observation of Deep Traps Responsible for Current Collapse in GaN Metal-Semiconductor Field-Effect Transistors

National Research Council Canada - National Science Library

Klein, P. B; Freitas, Jr., J. A; Binari, S. C; Wickenden, A. E

1999-01-01

... of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice...

Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition

Science.gov (United States)

Bollmann, Joachim; Venter, Andre

2018-04-01

A comprehensive understanding of defects in semiconductors remains of primary importance. In this paper the effectiveness of two of the most commonly used semiconductor defect spectroscopy techniques, viz. deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) are reviewed. The analysis of defects present in commercially available SiC diodes shows that admittance spectroscopy allows the identification of deep traps with reduced measurement effort compared to deep Level Transient Spectroscopy (DLTS). Besides the N-donor, well-studied intrinsic defects were detected in these diodes. Determination of their activation energy and defect density, using the two techniques, confirm that the sensitivity of AS is comparable to that of DLTS while, due to its well defined peak shape, the spectroscopic resolution is superior. Additionally, admittance spectroscopy can analyze faster emission processes which make the study of shallow defects more practical and even that of shallow dopant levels, possible. A comparative summary for the relevant spectroscopic features of the two capacitance methods are presented.

Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

International Nuclear Information System (INIS)

Kolev, P.V.; Deen, J.

1999-01-01

The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). The authors have studied three groups of devices: commercially available-discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET's. CR-DLTS is similar to both the conductance DLTs and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors

Spectroscopy of deep doping levels in Cd{sub 0.99}Mn{sub 0.01}Te:Ga; Spektroskopia glebokich poziomow domieszkowych w Cd{sub 0.99}Mn{sub 0.01}Te:Ga

Energy Technology Data Exchange (ETDEWEB)

Szatkowski, J.; Placzek-Popko, E.; Sieranski, K. [Politechnika Wroclawska, Wroclaw (Poland); Bieg, B. [Wyzsza Szkola Morska, Szczecin (Poland)

1997-12-01

The investigation results of deep energy levels in Cd{sub 0.99}Mn{sub 0.01}Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab.

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Fang, Z-Q.; Thompson, Phillip E.

2003-01-01

Deep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n + -p junctions using B doping for the p layer and p + -n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370 degree sign C, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1 (0.42-0.45 eV) and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600 degree sign C. It is hypothesized that these dominating electron traps are associated with pure divacancy defects and are independent of the dopant species

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Science.gov (United States)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2016-04-01

The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

Energy Technology Data Exchange (ETDEWEB)

Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

1996-03-01

Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Science.gov (United States)

Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

2017-12-01

Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Science.gov (United States)

Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

2018-02-01

InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

2016-04-28

The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

2016-01-01

The impact of proton irradiation on the threshold voltage (V T ) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V T was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10 14  cm −2 . Silvaco Atlas simulations of V T shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V T dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V T shifts. The proton irradiation induced V T shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

Energy Technology Data Exchange (ETDEWEB)

Li, Guochang; Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ (United Kingdom); Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

2016-08-08

Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.

Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

International Nuclear Information System (INIS)

Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

2015-01-01

Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

Characteristics of Chinese petroleum geology. Geological features and exploration cases of stratigraphic, foreland and deep formation traps

Energy Technology Data Exchange (ETDEWEB)

Jia, Chengzao [PetroChina Company Limited, Beijing (China)

2012-07-01

The first book of this subject in the recent 10 years. ''Characteristics of Chinese Petroleum Geology: Geological Features and Exploration Cases of Stratigraphic, Foreland and Deep Formation Traps'' systematically presents the progress made in petroleum geology in China and highlights the latest advances and achievements in oil/gas exploration and research, especially in stratigraphic, foreland and deep formation traps. The book is intended for researchers, practitioners and students working in petroleum geology, and is also an authoritative reference work for foreign petroleum exploration experts who want to learn more about this field in China.

Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

International Nuclear Information System (INIS)

Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

1987-01-01

p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

Energy Technology Data Exchange (ETDEWEB)

Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

2015-06-14

Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

The role of deep level traps in barrier height of 4H-SiC Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-01

This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

Electron trap annealing in neutron transmutation doped silicon

DEFF Research Database (Denmark)

Guldberg, J.

1977-01-01

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

Science.gov (United States)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Extending the dose range: Probing deep traps in quartz with 3.06 eV photons

DEFF Research Database (Denmark)

Jain, Mayank

2009-01-01

stimulation. Although, the fast OSL component is measured with similar efficiency by blue and violet lights, the slower OSL components (especially S3) are measured relatively more efficiently with the latter. New insight into the origins of quartz luminescence is presented through a comparison of violet......This article demonstrates that violet (405 nm) stimulated luminescence (VSL) signal from quartz contains contribution from deep traps that are otherwise not accessible with blue light (470 nm). Additionally, it also contains the typical fast and slow components observed with the blue light...... and blue lights stimulation, and thermal stimulations. Finally, it is shown that the deep traps probed through violet light stimulation have potential for increasing the dose measurement/dating range using quartz. The post-blue VSL signal allows easy, precise measurement of dose up to at least 1 kGy in our...

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

International Nuclear Information System (INIS)

Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2005-01-01

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

Energy Technology Data Exchange (ETDEWEB)

Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, Vl. [Technische Universitaet, Dresden, 01062 Dresden (Germany); Botha, J.R.; Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E{sub c}-0.046 eV, E{sub c}-0.186 eV, E{sub c}-0.314 eV. E{sub c}-0.528 eV and E{sub c}-0.605 eV) were detected. The metastable defect E{sub c}-0.046 eV having a trap signature similar to E1 is observed for the first time. E{sub c}-0.314 eV and E{sub c}-0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

International Nuclear Information System (INIS)

Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M.; Kolkovsky, Vl.; Botha, J.R.; Nyamhere, C.; Venter, A.

2012-01-01

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E c —0.046 eV, E c —0.186 eV, E c —0.314 eV. E c —0.528 eV and E c —0.605 eV) were detected. The metastable defect E c —0.046 eV having a trap signature similar to E1 is observed for the first time. E c —0.314 eV and E c —0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Science.gov (United States)

Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

2015-01-01

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

2013-01-01

The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

Metastable self-trapping of positrons in MgO

Science.gov (United States)

Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

1997-01-01

Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Science.gov (United States)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Isotope analysis of water trapped in fluid inclusions in deep sea corals

Science.gov (United States)

Vonhof, Hubert; Reijmer, John; Feenstra, Eline; Mienis, Furu

2015-04-01

Extant Lophelia pertusa deep sea coral specimens from the Loachev mound region in the North Atlantic Ocean contain water filled fluid inclusions in their skeleton. This fluid inclusion water was extracted with a crushing device, and its hydrogen and oxygen isotope ratios analysed. The resulting data span a wide range of isotope values which are remarkably different from the seawater isotope composition of the sites studied. Comparison with food source isotope signatures suggests that coral inclusion water contains a high, but variable proportion of metabolic water. The isotope composition of the inclusion water appears to vary with the position on the deep see coral reef, and shows a correlation with the stable isotope composition of the coral aragonite. This correlation seems to suggest that growth rate and other ecological factors play an important role in determining the isotope composition of fluids trapped in the coral skeleton, which can potentially be developed as a proxy for non-equilibrium isotope fractionation observed in the aragonite skeleton of many of the common deep sea coral species.

Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Amin, G.; Hussain, I.; Zaman, S.; Bano, N.; Nur, O.; Willander, M. [Department of Science and Technology, Campus Norrkoeping, Linkoeping University, 60174 Norrkoeping (Sweden)

2010-03-15

High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V{sub TFL}) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for the NTs were obtained as {proportional_to}0.27 eV and 2.1 x 10{sup 16} cm{sup -3}, respectively. The same parameters were also extracted for the ZnO NRs. The deep-level states observed crossponds to zinc interstitials (Zn{sub i}), which are responsible for the violet emission. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Stability of Trapped Electrons in SiO(2)

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.

1999-01-01

Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

Measurements and characterization of a hole trap in neutron-irradiated silicon

International Nuclear Information System (INIS)

Avset, B.S.

1996-04-01

The report describes measurements on a hole trap in neutron irradiated silicon diodes made one high resistivity phosphorus doped floatzone silicon. The hole trap was detected by Deep Level Transient Spectroscopy. This measurement gave a trap activation energy of 0.475 MeV. Other measurements showed that the trap has very small capture cross sections for both holes and electrons (10 -18 to 10 -20 cm 2 ) and that the hole capture cross section is temperature dependent. The energy level position of the trap has been estimated to be between 0.25 and 0.29 eV from the valence band. 25 refs., 21 figs., 4 tabs

Lithogenic fluxes to the deep Arabian Sea measurEd. by sediment traps

Digital Repository Service at National Institute of Oceanography (India)

Ramaswamy, V.; Nair, R.R; Manganini, S.J.; Haake, B.; Ittekkot, V.

. 38. No. 2. pp 1~g-\\[~44 It,lqt. fllC~g...4)i49tql $31~) 4- 0.till Pnnted m Great Britain. ~ lg~t Pergamon Press pie Lithogenic fluxes to the deep Arabian Sea measured by sediment traps V. RAMASWAMY,* R. R. NAIR,* S. MANGANINI,# B. HAAKE~. and V... (MIct, lrdAN et al., 1984). Most of the present suspended sediment discharge is in July and August, during the peak of the southwest monsoon period, with negligible discharge during other times (I'rrEKKO'r and ARAIN, 1986). The Narmada and Tapti...

The Initial Rise Method in the case of multiple trapping levels

International Nuclear Information System (INIS)

Furetta, C.; Guzman, S.; Cruz Z, E.

2009-10-01

The aim of the paper is to extent the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to the minerals extracted from Nopal herb and Oregano spice because the thermoluminescent glow curves shape suggests a trap distribution instead of a single trapping level. (Author)

The Initial Rise Method in the case of multiple trapping levels

Energy Technology Data Exchange (ETDEWEB)

Furetta, C. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Guzman, S.; Cruz Z, E. [Instituto de Ciencias Nucleares, UNAM, A. P. 70-543, 04510 Mexico D. F. (Mexico)

2009-10-15

The aim of the paper is to extent the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to the minerals extracted from Nopal herb and Oregano spice because the thermoluminescent glow curves shape suggests a trap distribution instead of a single trapping level. (Author)

Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

International Nuclear Information System (INIS)

Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

1984-05-01

Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

Origin of the main deep electron trap in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.

1986-01-01

The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

International Nuclear Information System (INIS)

Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

2012-01-01

Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

Deep energetic trap states in organic photovoltaic devices

KAUST Repository

Shuttle, Christopher G.; Treat, Neil D.; Douglas, Jessica D.; Frechet, Jean; Chabinyc, Michael L.

2011-01-01

The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deep energetic trap states in organic photovoltaic devices

KAUST Repository

Shuttle, Christopher G.

2011-11-23

The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

International Nuclear Information System (INIS)

Nyamhere, C.; Botha, J.R.; Venter, A.

2011-01-01

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

Trapping effects and acoustoelectric current saturation in ZnO single crystals

DEFF Research Database (Denmark)

Mosekilde, Erik

1970-01-01

Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound....... The temperature dependence of the saturated current is discussed in terms of a trapping model which includes nonlinear trapping effects. Our results indicate the presence of a shallow-donor level with an ionization energy of 50 meV and a deep-donor level approximately 230 meV below the conduction-band edge...

Magnetic field fluctuations analysis for the ion trap implementation of the quantum Rabi model in the deep strong coupling regime

Science.gov (United States)

Puebla, Ricardo; Casanova, Jorge; Plenio, Martin B.

2018-03-01

The dynamics of the quantum Rabi model (QRM) in the deep strong coupling regime is theoretically analyzed in a trapped-ion set-up. Recognizably, the main hallmark of this regime is the emergence of collapses and revivals, whose faithful observation is hindered under realistic magnetic dephasing noise. Here, we discuss how to attain a faithful implementation of the QRM in the deep strong coupling regime which is robust against magnetic field fluctuations and at the same time provides a large tunability of the simulated parameters. This is achieved by combining standing wave laser configuration with continuous dynamical decoupling. In addition, we study the role that amplitude fluctuations play to correctly attain the QRM using the proposed method. In this manner, the present work further supports the suitability of continuous dynamical decoupling techniques in trapped-ion settings to faithfully realize different interacting dynamics.

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2011-05-15

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

Hydrogenation of the ``new oxygen donor'' traps in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.; Johnson, N. M.

1986-04-01

Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski-grown Si samples that contained high concentrations of the oxygen-related ``new donor'' (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ``SiOx interface'' model for the ND defects.

Corroded planktic foraminifer (Globorotalia menardii) in the southern Bay of Bengal sediment trap sample of February 1992

Digital Repository Service at National Institute of Oceanography (India)

Mohan, R.; Guptha, M.V.S.

SEDIMENT TRAP 227 Fig.2. (a) Time series data of Total planktic foraminiferal flux [Yl axis Deep trap/ Left axis; Y2 axis Shallow trap/Right axis] for the period Feb.05, 1992 to Nov.20, 1992. (b) Time series data of Globorotalia menardii flux [Yl Deep... trap/ Left axis; Y2 axis Shallow trap /Right axis] for the period Feb.05, 1992 to Nov.20, 1992. (Note only 07 samples collected by the deep sediment trap). The Dotted Line indicates Deep trap;.Solid Line indicates Shallow trap. tests in plankton...

Neutrophil extracellular traps promote deep vein thrombosis in mice

Science.gov (United States)

Brill, A.; Fuchs, T.A.; Savchenko, A.S.; Thomas, G.M.; Martinod, K.; De Meyer, S.F.; Bhandari, A.A.; Wagner, D.D.

2011-01-01

Summary Background Upon activation, neutrophils can release nuclear material known as neutrophil extracellular traps (NETs), which were initially described as a part of antimicrobial defense. Extracellular chromatin was recently reported to be pro-thrombotic in vitro and to accumulate in plasma and thrombi of baboons with experimental deep vein thrombosis (DVT). Objective To explore the source and role of extracellular chromatin in DVT. Methods We used an established murine model of DVT induced by flow restriction (stenosis) in the inferior vena cava (IVC). Results We demonstrate that the levels of extracellular DNA increase in plasma after 6 h IVC stenosis, compared to sham-operated mice. Immunohistochemical staining revealed the presence of Gr-1-positive neutrophils in both red (RBC-rich) and white (platelet-rich) parts of thrombi. Citrullinated histone H3 (CitH3), an element of NETs’ structure, was present only in the red part of thrombi and was frequently associated with the Gr-1 antigen. Immunofluorescent staining of thrombi showed proximity of extracellular CitH3 and von Willebrand factor (VWF), a platelet adhesion molecule crucial for thrombus development in this model. Infusion of Deoxyribonuclease 1 (DNase 1) protected mice from DVT after 6 h and also 48 h IVC stenosis. Infusion of an unfractionated mixture of calf thymus histones increased plasma VWF and promoted DVT early after stenosis application. Conclusions Extracellular chromatin, likely originating from neutrophils, is a structural part of a venous thrombus and both the DNA scaffold and histones appear to contribute to the pathogenesis of DVT in mice. NETs may provide new targets for DVT drug development. PMID:22044575

Hot, deep origin of petroleum: deep basin evidence and application

Science.gov (United States)

Price, Leigh C.

1978-01-01

Use of the model of a hot deep origin of oil places rigid constraints on the migration and entrapment of crude oil. Specifically, oil originating from depth migrates vertically up faults and is emplaced in traps at shallower depths. Review of petroleum-producing basins worldwide shows oil occurrence in these basins conforms to the restraints of and therefore supports the hypothesis. Most of the world's oil is found in the very deepest sedimentary basins, and production over or adjacent to the deep basin is cut by or directly updip from faults dipping into the basin deep. Generally the greater the fault throw the greater the reserves. Fault-block highs next to deep sedimentary troughs are the best target areas by the present concept. Traps along major basin-forming faults are quite prospective. The structural style of a basin governs the distribution, types, and amounts of hydrocarbons expected and hence the exploration strategy. Production in delta depocenters (Niger) is in structures cut by or updip from major growth faults, and structures not associated with such faults are barren. Production in block fault basins is on horsts next to deep sedimentary troughs (Sirte, North Sea). In basins whose sediment thickness, structure and geologic history are known to a moderate degree, the main oil occurrences can be specifically predicted by analysis of fault systems and possible hydrocarbon migration routes. Use of the concept permits the identification of significant targets which have either been downgraded or ignored in the past, such as production in or just updip from thrust belts, stratigraphic traps over the deep basin associated with major faulting, production over the basin deep, and regional stratigraphic trapping updip from established production along major fault zones.

The initial rise method extended to multiple trapping levels in thermoluminescent materials

Energy Technology Data Exchange (ETDEWEB)

Furetta, C. [CICATA-Legaria, Instituto Politecnico Nacional, 11500 Mexico D.F. (Mexico); Guzman, S. [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F. (Mexico); Ruiz, B. [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F. (Mexico); Departamento de Agricultura y Ganaderia, Universidad de Sonora, A.P. 305, 83190 Hermosillo, Sonora (Mexico); Cruz-Zaragoza, E., E-mail: ecruz@nucleares.unam.m [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F. (Mexico)

2011-02-15

The well known Initial Rise Method (IR) is commonly used to determine the activation energy when only one glow peak is presented and analysed in the phosphor materials. However, when the glow peak is more complex, a wide peak and some holders appear in the structure. The application of the Initial Rise Method is not valid because multiple trapping levels are considered and then the thermoluminescent analysis becomes difficult to perform. This paper shows the case of a complex glow curve structure as an example and shows that the calculation is also possible using the IR method. The aim of the paper is to extend the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to minerals extracted from Nopal cactus and Oregano spices because the thermoluminescent glow curve's shape suggests a trap distribution instead of a single trapping level.

The initial rise method extended to multiple trapping levels in thermoluminescent materials

International Nuclear Information System (INIS)

Furetta, C.; Guzman, S.; Ruiz, B.; Cruz-Zaragoza, E.

2011-01-01

The well known Initial Rise Method (IR) is commonly used to determine the activation energy when only one glow peak is presented and analysed in the phosphor materials. However, when the glow peak is more complex, a wide peak and some holders appear in the structure. The application of the Initial Rise Method is not valid because multiple trapping levels are considered and then the thermoluminescent analysis becomes difficult to perform. This paper shows the case of a complex glow curve structure as an example and shows that the calculation is also possible using the IR method. The aim of the paper is to extend the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to minerals extracted from Nopal cactus and Oregano spices because the thermoluminescent glow curve's shape suggests a trap distribution instead of a single trapping level.

Dynamics of the deep-level emission in ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

2010-07-01

Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

Science.gov (United States)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

The initial rise method extended to multiple trapping levels in thermoluminescent materials.

Science.gov (United States)

Furetta, C; Guzmán, S; Ruiz, B; Cruz-Zaragoza, E

2011-02-01

The well known Initial Rise Method (IR) is commonly used to determine the activation energy when only one glow peak is presented and analysed in the phosphor materials. However, when the glow peak is more complex, a wide peak and some holders appear in the structure. The application of the Initial Rise Method is not valid because multiple trapping levels are considered and then the thermoluminescent analysis becomes difficult to perform. This paper shows the case of a complex glow curve structure as an example and shows that the calculation is also possible using the IR method. The aim of the paper is to extend the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to minerals extracted from Nopal cactus and Oregano spices because the thermoluminescent glow curve's shape suggests a trap distribution instead of a single trapping level. Copyright © 2010 Elsevier Ltd. All rights reserved.

Interface and oxide traps in high-κ hafnium oxide films

International Nuclear Information System (INIS)

Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

2004-01-01

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

Deep superconducting magnetic traps for neutral atoms and molecules

International Nuclear Information System (INIS)

Harris, J.G.E.; Michniak, R.A.; Nguyen, S.V.; Campbell, W.C.; Egorov, D.; Maxwell, S.E.; Buuren, L.D. van; Doyle, J.M.

2004-01-01

We describe the design, construction and performance of three realizations of a high-field superconducting magnetic trap for neutral atoms and molecules. Each of these traps utilizes a pair of coaxial coils in the anti-Helmholtz geometry and achieves depths greater than 4 T, allowing it to capture magnetic atoms and molecules cooled in a cryogenic buffer gas. Achieving this depth requires that the repulsive force between the coils (which can exceed 30 metric tons) be contained. We also describe additional features of the traps, including the elimination of trapped fluxes from the coils and the integration of the coils into a cryogenic vacuum environment suitable for producing cold atoms and molecules

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Hurni, C. A.; Speck, J. S.; Ringel, S. A.

2012-01-01

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH 3 -MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at E C - 0.14 eV, E C - 0.21 eV, E C - 0.26 eV, E C - 0.62 eV, E C - 0.67 eV, E C - 2.65 eV, and E C - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at E C - 0.14 eV and E C - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at E C - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of E C - 2.65 eV and E C - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH 3 -MBE grown m-plane GaN.

Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

International Nuclear Information System (INIS)

Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

2006-01-01

We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

Novel extension of the trap model for electrons in liquid hydrocarbons

International Nuclear Information System (INIS)

Jamal, M.A.; Watt, D.E.

1981-01-01

A novel extension for the trap model of electron mobilities in liquid hydrocarbons is described. The new model assumes: (a) two main types of electron trap exist in liquid hydrocarbons, one is deep and the second is shallow; (b) these traps are the same in all liquid alkanes. The difference in electron mobilities in different alkanes is accounted for by the difference in the frequency of electron trapping in each state. The probability of trapping in each state has been evaluated from the known structures of the normal alkanes. Electron mobilities in normal alkanes (C 3 -C 10 ) show a very good correlation with the probability of trapping in deep traps, suggesting that the C-C bonds are the main energy sinks of the electron. A mathematical formula which expresses the electron mobility in terms of the probability of trapping in deep traps has been found from the Arrhenius relationship between electron mobilities and probability of trapping. The model has been extended for branched alkanes and the relatively high electron mobilities in globular alkanes has been explained by the fact that each branch provides some degree of screening to the skeleton structure of the molecule resulting in reduction of the probability of electron interaction with the molecular skeleton. (author)

Trap spectrum of the ``new oxygen donor'' in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.

1984-07-01

Electronic properties of the new oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014 1016 cm-3 eV-1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of the new donor is explained by interface states occuring at the surface of SiO x precipitates.

Positron-trapping mechanism at dislocations in Zn

DEFF Research Database (Denmark)

Hidalgo, Carlos; Linderoth, Søren; Diego, Nieves de

1987-01-01

the average lifetime and the intensity of the long component decrease with increasing temperature. The experimental results are very well described in terms of a generalized trapping model where it is assumed that positrons become trapped in deep traps (jogs) via shallow traps (dislocation lines......). The temperature dependence of the positron-lifetime spectra below 120 K is attributed to the temperature dependence of the trapping rate to the dislocation line. The experimental results have demonstrated that detrapping processes from the dislocation line take place above 120 K. The positron binding energy...

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

International Nuclear Information System (INIS)

Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

Science.gov (United States)

Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

Hole traps in n-GaN detected by minority carrier transient spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Tokuda, Yutaka; Yamada, Yujiro; Shibata, Tatsunari; Yamaguchi, Shintaro [Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, 470-0392 Toyota (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Nagakute, 480-1192 Aichi (Japan)

2011-07-15

Minority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n-GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n-GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the E{sub v} + 0.86 eV hole trap with the trap concentration of 1.1x10{sup 16} cm{sup -3}. The E{sub v} + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n-GaN. It is suggested that the E{sub v} + 0.86 eV hole trap is associated with the V{sub Ga}-related defect or carbon-related defect. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

International Nuclear Information System (INIS)

Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

2008-01-01

Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

The control mechanism of surface traps on surface charge behavior in alumina-filled epoxy composites

International Nuclear Information System (INIS)

Li, Chuanyang; Hu, Jun; Lin, Chuanjie; He, Jinliang

2016-01-01

To investigate the role surface traps play in the charge injection and transfer behavior of alumina-filled epoxy composites, surface traps with different trap levels are introduced by different surface modification methods which include dielectric barrier discharges plasma, direct fluorination, and Cr 2 O 3 coating. The resulting surface physicochemical characteristics of experimental samples were observed using atomic force microscopy, scanning electron microscopy and fourier transform infrared spectroscopy. The surface potential under dc voltage was detected and the trap level distribution was measured. The results suggest that the surface morphology of the experimental samples differs dramatically after treatment with different surface modification methods. Different surface trap distributions directly determine the charge injection and transfer property along the surface. Shallow traps with trap level of 1.03–1.11 eV and 1.06–1.13 eV introduced by plasma and fluorination modifications are conducive for charge transport along the insulating surface, and the surface potential can be modified, producing a smoother potential curve. The Cr 2 O 3 coating can introduce a large number of deep traps with energy levels ranging from 1.09 to 1.15 eV. These can prevent charge injection through the reversed electric field formed by intensive trapped charges in the Cr 2 O 3 coatings. (paper)

Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs

Science.gov (United States)

Ringel, S. A.; Chatterjee, B.

1994-01-01

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

Science.gov (United States)

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

CERN Document Server

Stahl, J; Lindström, G; Pintilie, I

2003-01-01

Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

Characterisation of retention properties of charge-trapping memory cells at low temperatures

International Nuclear Information System (INIS)

Yurchuk, E; Bollmann, J; Mikolajick, T

2009-01-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more 'shallow' traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

Science.gov (United States)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Surface-Level Diversity and Decision-Making in Groups: When Does Deep-Level Similarity Help?

OpenAIRE

2006-01-01

Abstract We examined how surface-level diversity (based on race) and deep-level similarities influenced three-person decision-making groups on a hidden-profile task. Surface-level homogeneous groups perceived their information to be less unique and spent less time on the task than surface-level diverse groups. When the groups were given the opportunity to learn about their deep-level similarities prior to t...

Electronic circuit provides automatic level control for liquid nitrogen traps

Science.gov (United States)

Turvy, R. R.

1968-01-01

Electronic circuit, based on the principle of increased thermistor resistance corresponding to decreases in temperature provides an automatic level control for liquid nitrogen cold traps. The electronically controlled apparatus is practically service-free, requiring only occasional reliability checks.

Antimatter Plasmas in a Multipole Trap for Antihydrogen

CERN Document Server

Andresen, G B; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2007-01-01

We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

Antimatter plasmas in a multipole trap for antihydrogen.

Science.gov (United States)

Andresen, G; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2007-01-12

We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

Photoionization of radiation-induced traps in quartz and alkali feldspars.

Science.gov (United States)

Hütt, G; Jaek, I; Vasilchenko, V

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Photoionization of radiation-induced traps in quartz and alkali feldspars

International Nuclear Information System (INIS)

Huett, G.; Jaek, I.; Vasilchenko, V.

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction

Photoionization of radiation-induced traps in quartz and alkali feldspars

Energy Technology Data Exchange (ETDEWEB)

Huett, G. E-mail: hutt@pdos.gi.ee; Jaek, I.; Vasilchenko, V

2001-01-15

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

OpenAIRE

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

2016-01-01

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

Kinetics of light sum collection in solid dosemeters with several trapping levels

International Nuclear Information System (INIS)

Vlasov, V.K.; Tarasov, M.Yu.

1983-01-01

On the basis of a stochastic model of filling up the electron-hole capture centres following irradiation, the kinetics of light sum accumulation in crystallophosphors with any number of capture levels has been considered. Using as an example a crystallophosphor with two hole- and two electron capture centres, solution of equations for the kinetics of light sum accumulation in solid dosemeters is presented. It is shown that in the presence of two competing capture centres the filling-up of one of the traps is always described by the function with a bent and superlinear section, whereas the filling-up of the competing trap is described by the function without a bent. The dose-effect functional relationship for competing traps does not depend either on the energetic depth of the trap or absolute values of capture micro cross-sections, but depends solely on relative values of macro- and micro cross-sections for competing traps. The theoretical model has been checked when studying radiothermoluminescence of synthetic quartz. The experimental results are shown to agree well with the model suggested

Deep Ocean Contribution to Sea Level Rise

Science.gov (United States)

Chang, L.; Sun, W.; Tang, H.; Wang, Q.

2017-12-01

The ocean temperature and salinity change in the upper 2000m can be detected by Argo floats, so we can know the steric height change of the ocean. But the ocean layers above 2000m represent only 50% of the total ocean volume. Although the temperature and salinity change are small compared to the upper ocean, the deep ocean contribution to sea level might be significant because of its large volume. There has been some research on the deep ocean rely on the very sparse situ observation and are limited to decadal and longer-term rates of change. The available observational data in the deep ocean are too spares to determine the temporal variability, and the long-term changes may have a bias. We will use the Argo date and combine the situ data and topographic data to estimate the temperature and salinity of the sea water below 2000m, so we can obtain a monthly data. We will analyze the seasonal and annual change of the steric height change due to the deep ocean between 2005 and 2016. And we will evaluate the result combination the present-day satellite and in situ observing systems. The deep ocean contribution can be inferred indirectly as the difference between the altimetry minus GRACE and Argo-based steric sea level.

Vapor generation and atom traps: Atomic absorption spectrometry at the ng/L level

International Nuclear Information System (INIS)

Ataman, O. Yavuz

2008-01-01

Atom-trapping atomic absorption spectrometry is a technique that allows detection at the ng/L level for several analytes such as As, Se, Sb, Pb, Bi, Cd, In, Tl, Te, Sn and Hg. The principle involves generation of volatile species, usually hydrides, trapping these species on the surface of an atom trap held at an optimized temperature and, finally, revolatilizing the analyte species by rapid heating of the trap and transporting them in a carrier gas to a heated quartz tube, as commonly used with hydride generation AAS systems. A transient signal having, in most cases, a full width at half maximum of less than 1 s is obtained. The atom trap may be a quartz surface or a W-coil; the former is heated externally and the latter is heated resistively. Both collection and revolatilization temperatures are optimized. In some cases, the W-coil itself is used as an electrothermal atomizer and a heated quartz tube is then not needed. The evolution of these traps starts with the well-known Watling's slotted quartz tube (SQT), continues with atom trapping SQT and finally reaches the present traps mentioned above. The analytical figures of merit for these traps need to be standardized. Naturally, enhancement is on characteristic concentration, C 0 , where the change in characteristic mass, m 0 , can be related to trapping efficiency. Novel terms are suggested for E, enhancement factor; such as E max , maximum enhancement factor; E t , enhancement for 1.0 minute sampling and E v , enhancement for 1.0 mL of sample. These figures will allow easy comparison of results from different laboratories as well as different analytes and/or traps

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

2012-01-01

Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

Eliminating degradation and uncovering ion-trapping dynamics in electrochromic WO3 thin films

Science.gov (United States)

Wen, Rui-Tao; Granqvist, Claes G.; Niklasson, Gunnar A.

2015-01-01

Amorphous WO3 thin films are of keen interest as cathodic electrodes in transmittance-modulating electrochromic devices. However, these films suffer from ion-trapping-induced degradation of optical modulation and reversibility upon extended Li+-ion exchange. Here, we demonstrate that ion-trapping-induced degradation, which is commonly believed to be irreversible, can be successfully eliminated by constant-current-driven de-trapping, i.e., WO3 films can be rejuvenated and regain their initial highly reversible electrochromic performance. Pronounced ion-trapping occurs when x exceeds ~0.65 in LixWO3 during ion insertion. We find two main kinds of Li+-ion trapping sites (intermediate and deep) in WO3, where the intermediate ones are most prevalent. Li+-ions can be completely removed from intermediate traps but are irreversibly bound in deep traps. Our results provide a general framework for developing and designing superior electrochromic materials and devices. PMID:26259104

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Science.gov (United States)

Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

2012-11-01

Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

International Nuclear Information System (INIS)

Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

2004-01-01

N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Chasin, Adrian, E-mail: adrian.chasin@imec.be; Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul [imec, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium); Simoen, Eddy [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Gielen, Georges [ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)

2014-02-24

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

Vapor generation and atom traps: Atomic absorption spectrometry at the ng/L level

Energy Technology Data Exchange (ETDEWEB)

Ataman, O. Yavuz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)], E-mail: ataman@metu.edu.tr

2008-08-15

Atom-trapping atomic absorption spectrometry is a technique that allows detection at the ng/L level for several analytes such as As, Se, Sb, Pb, Bi, Cd, In, Tl, Te, Sn and Hg. The principle involves generation of volatile species, usually hydrides, trapping these species on the surface of an atom trap held at an optimized temperature and, finally, revolatilizing the analyte species by rapid heating of the trap and transporting them in a carrier gas to a heated quartz tube, as commonly used with hydride generation AAS systems. A transient signal having, in most cases, a full width at half maximum of less than 1 s is obtained. The atom trap may be a quartz surface or a W-coil; the former is heated externally and the latter is heated resistively. Both collection and revolatilization temperatures are optimized. In some cases, the W-coil itself is used as an electrothermal atomizer and a heated quartz tube is then not needed. The evolution of these traps starts with the well-known Watling's slotted quartz tube (SQT), continues with atom trapping SQT and finally reaches the present traps mentioned above. The analytical figures of merit for these traps need to be standardized. Naturally, enhancement is on characteristic concentration, C{sub 0}, where the change in characteristic mass, m{sub 0}, can be related to trapping efficiency. Novel terms are suggested for E, enhancement factor; such as E{sub max}, maximum enhancement factor; E{sub t}, enhancement for 1.0 minute sampling and E{sub v}, enhancement for 1.0 mL of sample. These figures will allow easy comparison of results from different laboratories as well as different analytes and/or traps.

The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1999-01-01

Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

Technologies for Trapped-Ion Quantum Information Systems

Science.gov (United States)

2016-03-21

we discuss work aiming to leverage a commer- cial CMOS (complementary metal-oxide- semiconductor ) process to develop an integrated ion trap architecture...this integration: alignment of optical elements with tiny modes to point emitters, and trap- ping charged particles close to dielectric surfaces. Inte...far by heating in several ways. The deep optical potentials required to confine a charged particle against stray fields impart significant recoil

Sub-mm Scale Fiber Guided Deep/Vacuum Ultra-Violet Optical Source for Trapped Mercury Ion Clocks

Science.gov (United States)

Yi, Lin; Burt, Eric A.; Huang, Shouhua; Tjoelker, Robert L.

2013-01-01

We demonstrate the functionality of a mercury capillary lamp with a diameter in the sub-mm range and deep ultraviolet (DUV)/ vacuum ultraviolet (VUV) radiation delivery via an optical fiber integrated with the capillary. DUV spectrum control is observed by varying the fabrication parameters such as buffer gas type and pressure, capillary diameter, electrical resonator design, and temperature. We also show spectroscopic data of the 199Hg+ hyper-fine transition at 40.5GHz when applying the above fiber optical design. We present efforts toward micro-plasma generation in hollow-core photonic crystal fiber with related optical design and theoretical estimations. This new approach towards a more practical DUV optical interface could benefit trapped ion clock developments for future ultra-stable frequency reference and time-keeping applications.

Study of formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors.

Science.gov (United States)

Dubey, Vikas; Kaur, Jagjeet; Parganiha, Yogita; Suryanarayana, N S; Murthy, K V R

2016-04-01

This paper reports the thermoluminescence properties of Eu(3+) doped different host matrix phosphors (SrY2O4 and Y4Al2O9). The phosphor is prepared by high temperature solid state reaction method. The method is suitable for large scale production and fixed concentration of boric acid using as a flux. The prepared samples were characterized by X-ray diffraction technique and the crystallite size calculated by Scherer's formula. The prepared phosphor characterized by Scanning Electron Microscopic (SEM), Fourier Transform Infrared (FTIR), Energy Dispersive X-ray analysis (EDX), thermoluminescence (TL) and Transmission Electron Microscopic (TEM) techniques. The prepared phosphors for different concentration of Eu(3+) ions were examined by TL glow curve for UV, beta and gamma irradiation. The UV 254nm source used for UV irradiation, Sr(90) source was used for beta irradiation and Co(60) source used for gamma irradiation. SrY2O4:Eu(3+)and Y4Al2O9:Eu(3+) phosphors which shows both higher temperature peaks and lower temperature peaks for UV, beta and gamma irradiation. Here UV irradiated sample shows the formation of shallow trap (surface trapping) and the gamma irradiated sample shows the formation of deep trapping. The estimation of trap formation was evaluated by knowledge of trapping parameters. The trapping parameters such as activation energy, order of kinetics and frequency factor were calculated by peak shape method. Here most of the peak shows second order of kinetics. The effect of gamma, beta and UV exposure on TL studies was also examined and it shows linear response with dose which indicate that the samples may be useful for TL dosimetry. Formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors is discussed in this paper. Copyright © 2015 Elsevier Ltd. All rights reserved.

The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

International Nuclear Information System (INIS)

Flament, O.; Fleetwood, D.M.; Leray, J.L.; Paillet, P.; Riewe, L.C.; Winokur, P.S.

1999-01-01

Deep and shallow electron traps form in irradiated thermal SiO 2 as a natural response to hole transport and trapping. The density and stability of these defects are discussed, as are their implications for total-dose modeling

SU-F-T-318: Sensitivity and Stability of OSLDs with Filled Deep Electron/hole Traps Under Pre-Irradiation and Bleaching Conditions

International Nuclear Information System (INIS)

Kim, J; Park, S; Lee, H; Kim, H; Choi, C; Park, J

2016-01-01

Purpose: This work evaluated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps (OSLDfull) with the bleaching conditions according to the accumulated dose. Methods: The OSLDs were first pre-irradiated with a Co-60 gamma ray at more than 5 kGy, so as to fill the deep electron and hole traps. Using a 6-MV beam, the OSLDfull characteristics were investigated in terms of the full bleaching, fading, dose linearity, and dose sensitivity obtained in response to the accumulated dose values. To facilitate a comparison of the dose sensitivity, OSLDs with un-filled deep electron/hole traps (OSLDempty) were investigated in the same manner. A long-pass filter was used to exclude bleaching-source wavelengths of less than 520 nm. Various bleaching time and wavelength combinations were used in order to determine the optimal bleaching conditions for the OSLD full. Results: The fading for the OSLDfull exhibited stable signals after 8 min, for both 1- and 10-Gy. For 4-h bleaching time and an unfiltered bleaching device, the supralinear index values for the OSLDfull were 1.003, 1.002, 0.999, and 1.001 for doses of 2, 4, 7, and 10 Gy, respectively. For a 65-Gy accumulated dose with a 5-Gy fraction, no variation in dose sensitivity was obtained for the OSLDfull, within a standard deviation of 0.85%, whereas the OSLDempty dose sensitivity decreased by approximately 2.3% per 10 Gy. The filtered bleaching device yielded a highly stable sensitivity for OSLDfull, independent of bleaching time and within a standard deviation of 0.71%, whereas the OSLDempty dose sensitivity decreased by approximately 4.2% per 10 Gy for an accumulated dose of 25 Gy with a 5-Gy fraction. Conclusion: Under the bleaching conditions determined in this study, clinical dosimetry with OSLDfull is highly stable, having an accuracy of 1% with no change in dose sensitivity or linearity at clinical doses. This work was supported by a National Research

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

International Nuclear Information System (INIS)

Tokuda, Yutaka; Shimada, Hitoshi

1998-01-01

Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

Energy Technology Data Exchange (ETDEWEB)

Evtodiev, I. [Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of); Caraman, I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Leontie, L., E-mail: lleontie@uaic.ro [Alexandru Ioan Cuza University of Iasi, Bd. Carol I, Nr. 11, RO 700506 Iasi (Romania); Rusu, D.-I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Dafinei, A. [Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania); Nedeff, V.; Lazar, G. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)

2012-03-15

Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

Advanced Quadrupole Ion Trap Instrumentation for Low Level Vehicle Emissions Measurements

International Nuclear Information System (INIS)

McLuckey, S.A.

1997-01-01

Quadrupole ion trap mass spectrometry has been evaluated for its potential use in vehicle emissions measurements in vehicle test facilities as an analyzer for the top 15 compounds contributing to smog generation. A variety of ionization methods were explored including ion trap in situ chemical ionization, atmospheric sampling glow discharge ionization, and nitric oxide chemical ionization in a glow discharge ionization source coupled with anion trap mass spectrometer. Emphasis was placed on the determination of hydrocarbons and oxygenated hydrocarbons at parts per million to parts per billion levels. Ion trap in situ water chemical ionization and atmospheric sampling glow discharge ionization were both shown to be amendable to the analysis of arenes, alcohols, aldehydes and, to some degree, alkenes. Atmospheric sampling glow discharge also generated molecular ions of methy-t-butyl ether (MTBE). Neither of these ionization methods, however, were found to generate diagnostic ions for the alkanes. Nitric oxide chemical ionization, on the other hand, was found to yield diagnostic ions for alkanes, alkenes, arenes, alcohols, aldehydes, and MTBE. The ability to measure a variety of hydrocarbons present at roughly 15 parts per billion at measurement rates of 3 Hz was demonstrated. All of the ions with potential to serve as parent ions in a tandem mass spectrometry experiment were found to yield parent-to-product conversion efficiencies greater than 75%. The flexibility afforded to the ion trap by use of tailored wave-forms applied to the end-caps allows parallel monitoring schemes to be devised that provide many of the advantages of tandem mass spectrometry without major loss in measurement rate. A large loss in measurement rate would ordinarily result from the use of conventional tandem mass spectrometry experiments carried out in series for a large number of targeted components. These results have demonstrated that the ion trap has an excellent combination of

Trapping cold ground state argon atoms for sympathetic cooling of molecules

OpenAIRE

Edmunds, P. D.; Barker, P. F.

2014-01-01

We trap cold, ground-state, argon atoms in a deep optical dipole trap produced by a build-up cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of co-trapped metastable argon atoms using a new type of parametric loss spectroscopy. Using this technique we als...

Charge generation and trapping in bisphenol-A-polycarbonate/N-isopropylcarbazole mixture: A study by electron bombardment-induced conductivity

International Nuclear Information System (INIS)

Santos, S.; Caraballo, D.

2007-01-01

Electron bombardment-induced conductivity measurements were carried out on cast films of N-isopropylcarbazole (NIPC) dispersed into an amorphous matrix of bisphenol-A-polycarbonate. The charge generation was studied by estimating the hole yield (g), the fraction of charge escaping recombination, as a function of electric field and concentration of NIPC at room temperature. The hole yield, besides increasing by increasing the content of NIPC, was observed to increase with the electric field in the manner predicted by the Onsager theory of geminate recombination. Deep trapping levels were studied by filling under electron bombardment and observing transients. The deep traps were neutral in nature with a concentration on the order of 8.0x10 14 cm -3 , which was low enough not to degrade transport under normal conditions

Damage related deep electron levels in ion implanted GaAs

International Nuclear Information System (INIS)

Allsopp, D.W.E.; Peaker, A.R.

1986-01-01

A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

Settling fluxes of U- and Th-series nuclides in the Bay of Bengal: Results from time-series sediment trap studies

Digital Repository Service at National Institute of Oceanography (India)

Sarin, M.M.; Krishnaswami, S.; Dalai, T.K.; Ramaswamy, V.; Ittekkot, V.

their production. Enhanced particle aggregation in the intermediate waters, resuspension of "nascent" sedimentary material and focussing of particles in the region of the deep traps can all account for these observations. The particulate flux in the deep trap...

Intrinsic charge trapping in amorphous oxide films: status and challenges

Science.gov (United States)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

International Nuclear Information System (INIS)

Wessels, B.W.

1980-01-01

In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

The mechanism of persistent photoconductivity induced by minority carrier trapping effect in ultraviolet photo-detector made of polycrystalline diamond film

International Nuclear Information System (INIS)

Wang Lanxi; Chen Xuekang; Wu Gan; Guo Wantu; Cao Shengzhu; Shang Kaiwen; Han Weihua

2011-01-01

Performances of long persistent photoconductivity, high responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photo-detector fabricated on a microcrystalline diamond film. Charge-based deep level transient spectroscopy measurement confirmed that a shallow level with activation energy of 0.21 eV and capture cross section of 9.9 × 10 −20 cm 2 is presented in the band gap of the diamond film. The shallow level may not act as effective recombination center due to the so small activation energy according to Schockly-Read-Hall statistics. The persistent photoconductivity relaxation fits in with the so called “barrier-limited recombination” model, which may be a minority carrier trapping effect related recombination process. The photo-induced minority carriers (electrons in this paper) may be trapped by the shallow level during light irradiation process and then de-trap slowly via thermal excitation or tunneling effect after removing the light source, which contributes to the persistent photoconductivity. The trapping effect can also reduce the probability of carrier recombination, resulting in the high responsivity and the high gain.

Decadal trends in deep ocean salinity and regional effects on steric sea level

Science.gov (United States)

Purkey, S. G.; Llovel, W.

2017-12-01

We present deep (below 2000 m) and abyssal (below 4000 m) global ocean salinity trends from the 1990s through the 2010s and assess the role of deep salinity in local and global sea level budgets. Deep salinity trends are assessed using all deep basins with available full-depth, high-quality hydrographic section data that have been occupied two or more times since the 1980s through either the World Ocean Circulation Experiment (WOCE) Hydrographic Program or the Global Ship-Based Hydrographic Investigations Program (GO-SHIP). All salinity data is calibrated to standard seawater and any intercruise offsets applied. While the global mean deep halosteric contribution to sea level rise is close to zero (-0.017 +/- 0.023 mm/yr below 4000 m), there is a large regional variability with the southern deep basins becoming fresher and northern deep basins becoming more saline. This meridional gradient in the deep salinity trend reflects different mechanisms driving the deep salinity variability. The deep Southern Ocean is freshening owing to a recent increased flux of freshwater to the deep ocean. Outside of the Southern Ocean, the deep salinity and temperature changes are tied to isopycnal heave associated with a falling of deep isopycnals in recent decades. Therefore, regions of the ocean with a deep salinity minimum are experiencing both a halosteric contraction with a thermosteric expansion. While the thermosteric expansion is larger in most cases, in some regions the halosteric compensates for as much as 50% of the deep thermal expansion, making a significant contribution to local sea level rise budgets.

Three-dimensional cavity cooling and trapping in an optical lattice

International Nuclear Information System (INIS)

Murr, K.; Nussmann, S.; Puppe, T.; Hijlkema, M.; Weber, B.; Webster, S. C.; Kuhn, A.; Rempe, G.

2006-01-01

A robust scheme for trapping and cooling atoms is described. It combines a deep dipole-trap which localizes the atom in the center of a cavity with a laser directly exciting the atom. In that way one obtains three-dimensional cooling while the atom is dipole-trapped. In particular, we identify a cooling force along the large spatial modulations of the trap. A feature of this setup, with respect to a dipole trap alone, is that all cooling forces keep a constant amplitude if the trap depth is increased simultaneously with the intensity of the probe laser. No strong coupling is required, which makes such a technique experimentally attractive. Several analytical expressions for the cooling forces and heating rates are derived and interpreted by analogy to ordinary laser cooling

The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

Science.gov (United States)

Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

2006-01-01

We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Science.gov (United States)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Trapping processes in CaS:Eu2+,Tm3+

International Nuclear Information System (INIS)

Jia, Dongdong; Jia, Weiyi; Evans, D. R.; Dennis, W. M.; Liu, Huimin; Zhu, Jing; Yen, W. M.

2000-01-01

CaS:Eu 2+ ,Tm 3+ is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm 3+ for Ca 2+ , serve as hole traps for the afterglow at room temperature. Tm 3+ plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu 2+ ions. These two processes, in which two different sites of Tm 3+ are involved, correspond to two traps with different depths. (c) 2000 American Institute of Physics

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Iron and intrinsic deep level states in Ga2O3

Science.gov (United States)

Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstübner, U.; Vines, L.

2018-01-01

Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ˜0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

Characterisation of hole traps in GaAs Fets by DLTS, low frequency noise and g sub M dispersion methods

International Nuclear Information System (INIS)

Iqbal, M.A.; Kaya, L.; Jones, B.K.

1997-01-01

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

Antihydrogen Formation, Dynamics and Trapping

CERN Document Server

Butler, Eoin; Charlton, Michael

2011-01-01

Antihydrogen, the simplest pure-antimatter atomic system, holds the promise of direct tests of matter-antimatter equivalence and CPT invariance, two of the outstanding unanswered questions in modern physics. Antihydrogen is now routinely produced in charged-particle traps through the combination of plasmas of antiprotons and positrons, but the atoms escape and are destroyed in a minuscule fraction of a second. The focus of this work is the production of a sample of cold antihydrogen atoms in a magnetic atom trap. This poses an extreme challenge, because the state-of-the-art atom traps are only approximately 0.5 K deep for ground-state antihydrogen atoms, much shallower than the energies of particles stored in the plasmas. This thesis will outline the main parts of the ALPHA experiment, with an overview of the important physical processes at work. Antihydrogen production techniques will be described, and an analysis of the spatial annihilation distribution to give indications of the temperature and binding ene...

Impact of Deepwater Horizon Spill on food supply to deep-sea benthos communities

Science.gov (United States)

Prouty, Nancy G.; Swarzenski, Pamela; Mienis, Furu; Duineveld, Gerald; Demopoulos, Amanda W.J.; Ross, Steve W.; Brooke, Sandra

2016-01-01

Deep-sea ecosystems encompass unique and often fragile communities that are sensitive to a variety of anthropogenic and natural impacts. After the 2010 Deepwater Horizon (DWH) oil spill, sampling efforts documented the acute impact of the spill on some deep-sea coral colonies. To investigate the impact of the DWH spill on quality and quantity of biomass delivered to the deep-sea, a suite of geochemical tracers (e.g., stable and radio-isotopes, lipid biomarkers, and compound specific isotopes) was measured from monthly sediment trap samples deployed near a high-density deep-coral site in the Viosca Knoll area of the north-central Gulf of Mexico prior to (Oct-2008 to Sept-2009) and after the spill (Oct-10 to Sept-11). Marine (e.g., autochthonous) sources of organic matter dominated the sediment traps in both years, however after the spill, there was a pronounced reduction in marinesourced OM, including a reduction in marine-sourced sterols and n-alkanes and a concomitant decrease in sediment trap organic carbon and pigment flux. Results from this study indicate a reduction in primary production and carbon export to the deep-sea in 2010-2011, at least 6-18 months after the spill started. Whereas satellite observations indicate an initial increase in phytoplankton biomass, results from this sediment trap study define a reduction in primary production and carbon export to the deep-sea community. In addition, a dilution from a low-14C carbon source (e.g., petrocarbon) was detected in the sediment trap samples after the spill, in conjunction with a change in the petrogenic composition. The data presented here fills a critical gap in our knowledge of biogeochemical processes and sub-acute impacts to the deep-sea that ensued after the 2010 DWH spill.

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Energy Technology Data Exchange (ETDEWEB)

Mooney, P. M.; Jiang, Zenan; Basile, A. F. [Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada); Zheng, Yongju; Dhar, Sarit [Physics Department, Auburn University, Auburn, Alabama 36849 (United States)

2016-07-21

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: indirect evidence for a permanent dipole moment.

Science.gov (United States)

Zang, Huidong; Cristea, Mihail; Shen, Xuan; Liu, Mingzhao; Camino, Fernando; Cotlet, Mircea

2015-09-28

Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

KAUST Repository

Sun, Jingya; Yang, Yang; Khan, Jafar I.; Alarousu, Erkki; Guo, Zaibing; Zhang, Xixiang; Zhang, Qiang; Mohammed, Omar F.

2014-01-01

We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

KAUST Repository

Sun, Jingya

2014-06-11

We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

Trapping molecules in two and three dimensions

International Nuclear Information System (INIS)

Pinkse, PW.H.; Junglen, T.; Rieger, T.; Rangwala, S.A.; Windpassinger, P.; Rempe, G.

2005-01-01

Full text: Cold molecules offer a new testing ground for quantum-physical effects in nature. For example, producing slow beams of large molecules could push experiments studying the boundary between quantum interference and classical particles up towards ever heavier particles. Moreover, cold molecules, in particular YbF, seem an attractive way to narrow down the constraints on the value of the electron dipole moment and finally, quantum information processing using chains of cold polar molecules or vibrational states in molecules have been proposed. All these proposals rely on advanced production and trapping techniques, most of which are still under development. Therefore, novel production and trapping techniques for cold molecules could offer new possibilities not found in previous methods. Electric traps hold promise for deep trap potentials for neutral molecules. Recently we have demonstrated two-dimensional trapping of polar molecules in a four-wire guide using electrostatic and electrodynamic trapping techniques. Filled from a thermal effusive source, such a guide will deliver a beam of slow molecules, which is an ideal source for interferometry experiments with large molecules, for instance. Here we report about the extension of this work to three-dimensional trapping. Polar molecules with a positive Stark shift can be trapped in the minimum of an electrostatic field. We have successfully tested a large volume electrostatic trap for ND3 molecules. A special feature of this trap is that it can be loaded continuously from an electrostatic guide, at a temperature of a few hundred mK. (author)

Trapping cold ground state argon atoms.

Science.gov (United States)

Edmunds, P D; Barker, P F

2014-10-31

We trap cold, ground state argon atoms in a deep optical dipole trap produced by a buildup cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of cotrapped metastable argon atoms and determine an elastic cross section. Using a type of parametric loss spectroscopy we also determine the polarizability of the metastable 4s[3/2](2) state to be (7.3±1.1)×10(-39)  C m(2)/V. Finally, Penning and associative losses of metastable atoms in the absence of light assisted collisions, are determined to be (3.3±0.8)×10(-10)  cm(3) s(-1).

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

A study of ion implanted gallium arsenide using deep level transient spectroscopy

International Nuclear Information System (INIS)

Emerson, N.G.

1981-03-01

This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

Separation and identification of picogram levels of dioxins and PCBs by GC/cryogenic trapping FTIR

Science.gov (United States)

Johnson, David J.; Powell, Jay R.; Krishnan, K.

1994-01-01

Capillary gas chromatography/mass spectrometry (GC/MS) has routinely been used by the analytical chemist to separate and identify low levels of environmentally important compounds. A GC/Cryogenic Trapping Fourier Transform Infrared Spectrometer (Tracer) provides the sensitivity of the GC/MS with the added capability of differentiating between compounds of the same mass. In this work, the Tracer was utilized to study low levels of six Polychlorinated Biphenyls (PCBs), eight Chlorinated Dibenzo-p-Doxins and Norflurazon. In all cases, picogram levels of these compounds were easily detected from `on the fly' generated IR chromatograms. Since the separated compounds eluting from the capillary column are cryogenically trapped onto a moving liquid nitrogen cooled ZnSe crystal, excellent signal-to- noise spectra of these same compounds may be collected after the run by returning to the same areas of deposition and signal averaging.

Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

Science.gov (United States)

Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.

2002-03-01

Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.

Emission spectrum of a harmonically trapped Λ-type three-level atom

International Nuclear Information System (INIS)

Guo Hong; Tang Pei

2013-01-01

We theoretically investigate the emission spectrum for a Λ-type three-level atom trapped in the node of a standing wave. We show that the atomic center-of-mass motion not only directly affects the peak number, peak position, and peak height in the atomic emission spectrum, but also influences the effects of the cavity field and the atomic initial state on atomic emission spectrum. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Deep borehole disposal of high-level radioactive waste.

Energy Technology Data Exchange (ETDEWEB)

Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

2009-07-01

Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

1993-01-01

We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

Sea-level and deep-sea-temperature variability over the past 5.3 million years.

Science.gov (United States)

Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

2014-04-24

Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

Formation of neutrophil extracellular traps under low oxygen level

Directory of Open Access Journals (Sweden)

Katja Branitzki-Heinemann

2016-11-01

Full Text Available Since their discovery, neutrophil extracellular traps (NETs have been characterized as a fundamental host innate immune defense mechanism. Conversely, excessive NET release may have a variety of detrimental consequences for the host. A fine balance between NET formation and elimination is necessary to sustain a protective effect during an infectious challenge. Our own recently published data revealed that stabilization of hypoxia inducible factor 1α (HIF-1α by the iron chelating HIF-1α-agonist desferoxamine or AKB-4924 enhanced the release of phagocyte extracellular traps. Since HIF-1α is a global regulator of the cellular response to low oxygen, we hypothesized that NET formation may be similarly increased under low oxygen conditions. Hypoxia occurs in tissues during infection or inflammation, mostly due to overconsumption of oxygen by pathogens and recruited immune cells. Therefore, experiments were performed to characterize the formation of NETs under hypoxic oxygen conditions compared to normoxia. Human blood-derived neutrophils were isolated and incubated under normoxic (21% oxygen level and compared to hypoxic (1% conditions. Dissolved oxygen levels were monitored in the primary cell culture using a Fibox4-PSt3 measurement system. The formation of NETs was quantified by fluorescence microscopy in response to the known NET-inducer phorbol 12-myristate 13-acetate (PMA or S. aureus wildtype and a nuclease-deficient mutant. In contrast to our hypothesis, spontaneous NET formation of neutrophils incubated under hypoxia was distinctly reduced compared to control neutrophils incubated under normoxia. Furthermore, neutrophils incubated under hypoxia showed significantly reduced formation of NETs in response to PMA. Gene expression analysis revealed that mRNA level of hif-1α as well as hif-1α target genes was not altered. However, in good correlation to the decreased NET formation under hypoxia, the cholesterol content of the neutrophils was

Particle fluxes in the deep Eastern Mediterranean basins: the role of ocean vertical velocities

Directory of Open Access Journals (Sweden)

L. Patara

2009-03-01

Full Text Available This paper analyzes the relationship between deep sedimentary fluxes and ocean current vertical velocities in an offshore area of the Ionian Sea, the deepest basin of the Eastern Mediterranean Sea. Sediment trap data are collected at 500 m and 2800 m depth in two successive moorings covering the period September 1999–May 2001. A tight coupling is observed between the upper and deep traps and the estimated particle sinking rates are more than 200 m day⁻¹. The current vertical velocity field is computed from a 1/16°×1/16° Ocean General Circulation Model simulation and from the wind stress curl. Current vertical velocities are larger and more variable than Ekman vertical velocities, yet the general patterns are alike. Current vertical velocities are generally smaller than 1 m day⁻¹: we therefore exclude a direct effect of downward velocities in determining high sedimentation rates. However we find that upward velocities in the subsurface layers of the water column are positively correlated with deep particle fluxes. We thus hypothesize that upwelling would produce an increase in upper ocean nutrient levels – thus stimulating primary production and grazing – a few weeks before an enhanced vertical flux is found in the sediment traps. High particle sedimentation rates may be attained by means of rapidly sinking fecal pellets produced by gelatinous macro-zooplankton. Other sedimentation mechanisms, such as dust deposition, are also considered in explaining large pulses of deep particle fluxes. The fast sinking rates estimated in this study might be an evidence of the efficiency of the biological pump in sequestering organic carbon from the surface layers of the deep Eastern Mediterranean basins.

Information entropy of a time-dependent three-level trapped ion interacting with a laser field

International Nuclear Information System (INIS)

Abdel-Aty, Mahmoud

2005-01-01

Trapped and laser-cooled ions are increasingly used for a variety of modern high-precision experiments, frequency standard applications and quantum information processing. Therefore, in this communication we present a comprehensive analysis of the pattern of information entropy arising in the time evolution of an ion interacting with a laser field. A general analytic approach is proposed for a three-level trapped-ion system in the presence of the time-dependent couplings. By working out an exact analytic solution, we conclusively analyse the general properties of the von Neumann entropy and quantum information entropy. It is shown that the information entropy is affected strongly by the time-dependent coupling and exhibits long time periodic oscillations. This feature attributed to the fact that in the time-dependent region Rabi oscillation is time dependent. Using parameters corresponding to a specific three-level ionic system, a single beryllium ion in a RF-(Paul) trap, we obtain illustrative examples of some novel aspects of this system in the dynamical evolution. Our results establish an explicit relation between the exact information entropy and the entanglement between the multi-level ion and the laser field. We show that different nonclassical effects arise in the dynamics of the ionic population inversion, depending on the initial states of the vibrational motion/field and on the values of Lamb-Dicke parameter η

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

Science.gov (United States)

Li, S. S.; Chiu, T. T.; Loo, R. Y.

1981-01-01

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

International Nuclear Information System (INIS)

Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

2013-01-01

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

International Nuclear Information System (INIS)

Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

2015-01-01

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

Convolutional Neural Networks for Text Categorization: Shallow Word-level vs. Deep Character-level

OpenAIRE

Johnson, Rie; Zhang, Tong

2016-01-01

This paper reports the performances of shallow word-level convolutional neural networks (CNN), our earlier work (2015), on the eight datasets with relatively large training data that were used for testing the very deep character-level CNN in Conneau et al. (2016). Our findings are as follows. The shallow word-level CNNs achieve better error rates than the error rates reported in Conneau et al., though the results should be interpreted with some consideration due to the unique pre-processing o...

Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation

Directory of Open Access Journals (Sweden)

Zervos Matthew

2009-01-01

Full Text Available Abstract We have studied the optical properties and carrier dynamics in SnO2nanowires (NWs with an average radius of 50 nm that were grown via the vapor–liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO2NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77 eV and contains two broad absorption bands. The first is located below the band edge (shallow traps and the second near the center of the band gap (deep traps. Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70 ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2 ns. Auger recombination appears to be important at the highest fluence used in this study (500 μJ/cm2; however, it has negligible effect for fluences below 50 μJ/cm2. The Auger coefficient for the SnO2NWs was estimated to be 7.5 ± 2.5 × 10−31 cm6/s.

Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-06-15

Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested.

Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

International Nuclear Information System (INIS)

Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su

2016-01-01

Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested

Spin resonance with trapped ions

Energy Technology Data Exchange (ETDEWEB)

Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E [Institut fuer Laser-Physik, Universitaet Hamburg, Jungiusstrasse 9, 20355 Hamburg (Germany)

2003-03-14

A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped {sup 171}Yb{sup +}, we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states.

Spin resonance with trapped ions

International Nuclear Information System (INIS)

Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E

2003-01-01

A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped 171 Yb + , we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

Science.gov (United States)

Kumar, Sandeep; Kumar, Sugam; Katharria, Y S; Safvan, C P; Kanjilal, D

2008-05-01

A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

International Nuclear Information System (INIS)

Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

2010-01-01

Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

Deep Inelastic Scattering at the Amplitude Level

International Nuclear Information System (INIS)

Brodsky, Stanley J.

2005-01-01

The deep inelastic lepton scattering and deeply virtual Compton scattering cross sections can be interpreted in terms of the fundamental wavefunctions defined by the light-front Fock expansion, thus allowing tests of QCD at the amplitude level. The AdS/CFT correspondence between gauge theory and string theory provides remarkable new insights into QCD, including a model for hadronic wavefunctions which display conformal scaling at short distances and color confinement at large distances

Time-dependence hole and electron trapping effects in SIMOX buried oxides

International Nuclear Information System (INIS)

Boesch, H.E. Jr.; Taylor, T.L.; Hite, L.R.; Bailey, W.E.

1990-01-01

Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk

Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

International Nuclear Information System (INIS)

James, Ralph B.

2000-01-01

In today's commercially available counter-select-grade CdZnTe crystals for radiation detector applications, the thermal ionization energies of the traps and their types, whether electron or hole traps, were measured. The measurements were successfully done using thermoelectric emission spectroscopy (TEES) and thermally stimulated conductivity (TSC). For reliability, the electrical contacts to the sample were found to be very important and, instead of Au Schottky contacts, In Ohmic contacts had to be used. For the filling of the traps, photoexcitation was done at zero bias, at 20K and at wavelengths which gave the maximum bulk photoexcitation for the sample. Between the temperature range from 20 to 400 K, the TSC current was found to be on the order of ∼ 10,000 times or even larger than the TEES current, in agreement with theory, but only TEES could resolve the trap type and was sensitive to the deep traps. Large concentration of hole traps at 0.1 and 0.6 eV were observed and smaller contraction of electron traps at 0.4 eV was seen. These deep traps cause compensation in the material and also cause trapping that degrades the radiation detection measurement

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

Science.gov (United States)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Monsoon control on trace metal fluxes in the deep Arabian Sea

Indian Academy of Sciences (India)

Monsoon control on trace metal fluxes in the deep Arabian Sea ... at marine boundaries and surface ocean processes: Forcings and feedbacks Volume 115 ... Annual Al fluxes at shallow and deep trap depths were 0.47 and 0.46 gm−2 in the ...

Fundamental limit of nanophotonic light trapping in solar cells.

Science.gov (United States)

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui

2010-10-12

Establishing the fundamental limit of nanophotonic light-trapping schemes is of paramount importance and is becoming increasingly urgent for current solar cell research. The standard theory of light trapping demonstrated that absorption enhancement in a medium cannot exceed a factor of 4n(2)/sin(2)θ, where n is the refractive index of the active layer, and θ is the angle of the emission cone in the medium surrounding the cell. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the conventional limit can be substantially surpassed when optical modes exhibit deep-subwavelength-scale field confinement, opening new avenues for highly efficient next-generation solar cells.

Modeling the effect of deep impurity ionization on GaAs photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

1992-01-01

The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the Lock-On'' phenomena could occur in the device.

Modeling the effect of deep impurity ionization on GaAs photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

1992-01-01

The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the ``Lock-On`` phenomena could occur in the device.

Particle trapping in stimulated scattering processes

International Nuclear Information System (INIS)

Karttunen, S.J.; Heikkinen, J.A.

1981-01-01

Particle trapping effects on stimulated Brillouin and Raman scattering are investigated. A time and space dependent model assumes a Maxwellian plasma which is taken to be homogeneous in the interaction region. Ion trapping has a rather weak effect on stimulated Brillouin scattering and large reflectivities are obtained even in strong trapping regime. Stimulated Raman scattering is considerably reduced by electron trapping. Typically 15-20 times larger laser intensities are required to obtain same reflectivity levels than without trapping. (author)

Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

Directory of Open Access Journals (Sweden)

I. I. Kurkina

2012-09-01

Full Text Available The charge deep-level transient spectroscopy (Q-DLTS is applied to the study of the dislocation-rich Si layers grown on a surface composed of dense arrays of Ge islands prepared on the oxidized Si surface. This provides revealing three deep-level bands located at EV + 0.31 eV, EC – 0.35 eV and EC – 0.43 eV using the stripe-shaped p-i-n diodes fabricated on the basis of these layers. The most interesting observation is the local state recharging process which proceeds with low activation energy (∼50 meV or without activation. The recharging may occur by carrier tunneling within deep-level bands owing to the high dislocation density ∼ 1011 - 1012 cm-2. This result is in favor of the suggestion on the presence of carrier transport between the deep states, which was previously derived from the excitation dependence of photoluminescence (PL intensity. Electroluminescence (EL spectra measured from the stripe edge of the same diodes contain two peaks centered near 1.32 and 1.55 μm. Comparison with PL spectra indicates that the EL peaks are generated from arsenic-contaminated and pure areas of the layers, respectively.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

Energy Technology Data Exchange (ETDEWEB)

Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

Dynamics of a trapped two-level and three-level atom interacting with classical electromagnetic field

International Nuclear Information System (INIS)

Ray, Aditi

2004-01-01

The dynamics of a two-level atom driven by a single laser beam and three-level atom (Lambda configuration) irradiated by two laser beams are studied taking into account of the quantized center-of-mass motion of the atom. It is shown that the trapped atom system under appropriate resonance condition exhibits the large time-scale revivals when the index of the vibrational sideband responsible for the atomic electronic transition is greater than unity. The revival times are shown to be dependent on the initial number of vibrational excitations and the magnitude of the Lamb-Dicke parameter. The sub-Poissonian statistics in vibrational quantum number is observed at certain time intervals. The minimum time of interaction for which the squeezed states of motional quadrature are generated is found to be decreasing with the increase in the Lamb-Dicke parameter

Deeply trapped electrons in imaging plates and their utilization for extending the dynamic range

International Nuclear Information System (INIS)

Ohuchi, Hiroko; Kondo, Yasuhiro

2010-01-01

The absorption spectra of deep centers in an imaging plate (IP) made of BaFBr 0:85 I 0:15 :Eu 2+ have been studied in the ultraviolet region. Electrons trapped in deep centers are considered to be the cause of unerasable and reappearing latent images in IPs over-irradiated with X-rays. Deep centers showed a dominant peak at around 320 nm, followed by two small peaks at around 345 and 380 nm. By utilizing deeply trapped electrons, we have attempted to extend the dynamic range of an IP. The IP was irradiated by 150-kV X-rays with doses from 8.07 mGy to 80.7 Gy. Reading out the latent image by the stimulation of Eu 2+ luminescence with a 633-nm He-Ne laser light from a conventional Fuji reader showed a linear relationship with irradiated dose up to 0.8 Gy, but then becoming non-linear. After fully erasing with visible light, unerasable latent images were read out using 635-nm semi-conductor laser light combined with a photon-counting detection system. The dose-response curve so obtained gave a further two orders of magnitude extending the dynamic range up to 80.7 Gy. Comprehensive results indicate that electrons supplied from deep centers to the F centers provided the extended dynamic range after the F centers became saturated. Based on these facts, a model of the excitation of deeply trapped electrons and PSL processes is proposed.

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-06-15

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

Characterization of deep energy levels in mercury iodide. Application to nuclear detection

International Nuclear Information System (INIS)

Mohammed Brahim, Tayeb.

1982-07-01

The last few years have seen an increasing interest in HgI 2 detectors for room temperature gamma and X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels has been performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques and the polarization phenomena observed in nuclear detection in both vapor phase and solution grown crystals. For the latter, polarization can be eliminated or notably reduced by illumination of the positive electrode or by using a MIS positively biased structure [fr

Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

International Nuclear Information System (INIS)

Lee, M.H.; Hsieh, B.-F.; Chang, S.T.

2013-01-01

The formation of trapped states due to mechanical strain dominates the characteristics of a-Si:H thin-film transistors. The behavior of electrical characteristics affected by mechanical strain can be explained by the redistribution of trap states in the bandgap. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics, such as threshold voltage, subthreshold swing, and the mobility of carriers. During a mechanical strain, the deep states are redistributed into a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which have exponential distributions. It is concluded that the gap state density of an a-Si:H layer under the effects of mechanical strain is fundamental to the reliability and development of flexible electronics. - Highlights: ► The trap formation by mechanical strain dominates the characteristics. ► Weak or broken bonds may contribute to the redistribution of trap states. ► The deep states are redistributed into a Gaussian distribution

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Quantum Simulation of the Quantum Rabi Model in a Trapped Ion

Science.gov (United States)

Lv, Dingshun; An, Shuoming; Liu, Zhenyu; Zhang, Jing-Ning; Pedernales, Julen S.; Lamata, Lucas; Solano, Enrique; Kim, Kihwan

2018-04-01

The quantum Rabi model, involving a two-level system and a bosonic field mode, is arguably the simplest and most fundamental model describing quantum light-matter interactions. Historically, due to the restricted parameter regimes of natural light-matter processes, the richness of this model has been elusive in the lab. Here, we experimentally realize a quantum simulation of the quantum Rabi model in a single trapped ion, where the coupling strength between the simulated light mode and atom can be tuned at will. The versatility of the demonstrated quantum simulator enables us to experimentally explore the quantum Rabi model in detail, including a wide range of otherwise unaccessible phenomena, as those happening in the ultrastrong and deep strong-coupling regimes. In this sense, we are able to adiabatically generate the ground state of the quantum Rabi model in the deep strong-coupling regime, where we are able to detect the nontrivial entanglement between the bosonic field mode and the two-level system. Moreover, we observe the breakdown of the rotating-wave approximation when the coupling strength is increased, and the generation of phonon wave packets that bounce back and forth when the coupling reaches the deep strong-coupling regime. Finally, we also measure the energy spectrum of the quantum Rabi model in the ultrastrong-coupling regime.

Quantum Simulation of the Quantum Rabi Model in a Trapped Ion

Directory of Open Access Journals (Sweden)

Dingshun Lv

2018-04-01

Full Text Available The quantum Rabi model, involving a two-level system and a bosonic field mode, is arguably the simplest and most fundamental model describing quantum light-matter interactions. Historically, due to the restricted parameter regimes of natural light-matter processes, the richness of this model has been elusive in the lab. Here, we experimentally realize a quantum simulation of the quantum Rabi model in a single trapped ion, where the coupling strength between the simulated light mode and atom can be tuned at will. The versatility of the demonstrated quantum simulator enables us to experimentally explore the quantum Rabi model in detail, including a wide range of otherwise unaccessible phenomena, as those happening in the ultrastrong and deep strong-coupling regimes. In this sense, we are able to adiabatically generate the ground state of the quantum Rabi model in the deep strong-coupling regime, where we are able to detect the nontrivial entanglement between the bosonic field mode and the two-level system. Moreover, we observe the breakdown of the rotating-wave approximation when the coupling strength is increased, and the generation of phonon wave packets that bounce back and forth when the coupling reaches the deep strong-coupling regime. Finally, we also measure the energy spectrum of the quantum Rabi model in the ultrastrong-coupling regime.

Electron traps and scintillation mechanism in YAlO3:Ce and LuAlO3:Ce scintillators

International Nuclear Information System (INIS)

Wojtowicz, A.J.; Glodo, J.; Drozdowski, W.; Przegietka, K.R.

1998-01-01

In this paper we present the results of thermoluminescence, isothermal decay and scintillation light yield measurements on two isostructural scintillator materials, YAlO 3 :Ce and LuAlO 3 :Ce. In addition to the variety of deep traps identified by thermoluminescence and isothermal decays, scintillation light yield experiments demonstrate the presence in both materials of a number of relatively shallow traps. While the deep traps may reduce the scintillation light yield, they do not influence the kinetics of the process. The shallow traps, on the other hand, by interfering with the process of radiative recombination of charge carriers via Ce 3+ ions, can strongly affect not only the yield of the scintillation process but its kinetics as well. The presence of shallow traps provides a consistent explanation for a number of poorly understood relationships between the two scintillator materials, including a higher room temperature scintillation light yield and longer scintillation decay time in YAlO 3 :Ce, and a longer scintillation rise time in LuAlO 3 :Ce. Theoretical analysis indicates that elimination of these traps would make the two materials nearly identical in scintillator performance. Although the specific identity of all traps remains elusive, the performance of both scintillator materials is now, in practical terms, fully understood. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Theoretical evaluation of matrix effects on trapped atomic levels

Energy Technology Data Exchange (ETDEWEB)

Das, G.P.; Gruen, D.M.

1986-06-01

We suggest a theoretical model for calculating the matrix perturbation on the spectra of atoms trapped in rare gas systems. The model requires the ''potential curves'' of the diatomic system consisting of the trapped atom interacting with one from the matrix and relies on the approximation that the total matrix perturbation is a scalar sum of the pairwise interactions with each of the lattice sites. Calculations are presented for the prototype systems Na in Ar. Attempts are made to obtain ab initio estimates of the Jahn-Teller effects for excited states. Comparison is made with our recent Matrix-Isolation Spectroscopic (MIS) data. 10 refs., 3 tabs.

Theoretical evaluation of matrix effects on trapped atomic levels

International Nuclear Information System (INIS)

Das, G.P.; Gruen, D.M.

1986-06-01

We suggest a theoretical model for calculating the matrix perturbation on the spectra of atoms trapped in rare gas systems. The model requires the ''potential curves'' of the diatomic system consisting of the trapped atom interacting with one from the matrix and relies on the approximation that the total matrix perturbation is a scalar sum of the pairwise interactions with each of the lattice sites. Calculations are presented for the prototype systems Na in Ar. Attempts are made to obtain ab initio estimates of the Jahn-Teller effects for excited states. Comparison is made with our recent Matrix-Isolation Spectroscopic (MIS) data. 10 refs., 3 tabs

Long charged macromolecule in an entropic trap with rough surfaces.

Science.gov (United States)

Mamasakhlisov, Yevgeni Sh; Hayryan, Shura; Hu, Chin-Kun

2012-11-01

The kinetics of the flux of a charged macromolecular solution through an environment of changing geometry with wide and constricted regions is investigated analytically. A model device consisting of alternating deep and shallow slits known as an "entropic trap" is used to represent the environment. The flux is supported by the external electrostatic field. The "wormlike chain" model is used for the macromolecule (dsDNA in the present study). The chain entropy in both the deep and the shallow slits, the work by the electric field, and the energy of the elastic bending of the chain are taken into account accurately. Based on the calculated free energy, the kinetics and the scaling behavior of the chain escaping from the entropic trap are studied. We find that the escape process occurs in two kinetic stages with different time scales and discuss the possible influence of the surface roughness. The scope of the accuracy of the proposed model is discussed.

Encoding arbitrary grey-level optical landscapes for trapping and manipulation using GPC

DEFF Research Database (Denmark)

Alonzo, Carlo Amadeo; Rodrigo, Peter John; Palima, Darwin

2007-01-01

With the aid of phase-only spatial light modulators (SLM), generalized phase contrast (GPC) has been applied with great success to the projection of binary light patterns through arbitrary-NA microscope objectives for real-time three-dimensional manipulation of microscopic particles. Here, we...... review the analysis of the GPC method with emphasis on efficiently producing speckle-free two-dimensional grey-level light Patterns. Numerical simulations are applied to construct 8-bit grey-level optical potential landscapes with high fidelity and optical throughput via the GPC method. Three types...... of patterns were constructed: geometric block patterns, multi-level optical trap arrays, and optical obstacle arrays. Non-periodic patterns were accurately projected with an average of 80% diffraction efficiency. Periodic patterns yielded even higher diffraction efficiencies, averaging 94%, by the utilization...

Influence of deep traps in the Tl response of ZrO{sub 2} + PTFE; Influencia de las trampas profundas en la respuesta Tl de ZrO{sub 2} + PTFE

Energy Technology Data Exchange (ETDEWEB)

Rivera M, T.; Azorin N, J.; Falcony G, C.; Martinez S, E.; Garcia H, M. [Universidad Autonoma Metropolitana-Iztapalapa, 09340 Mexico D.F. (Mexico)

2000-07-01

In this work are presented the results from investigating the processes related with the defects produced by ionizing radiation in ZrO{sub 2}. It is established an hypothesis which pretends to explain the phenomena that implicates the manifestation of Tl peaks in the brightness curve due to electron removal from the surface traps to the deep traps, through the thermo-transference process, where the excitonic process correspond to the F centers. During the experimental process it was observed this effect through the peaks running in Tl curve. These peaks are presented at 220 and 360 Centigrade for the material without any previous thermal treatment; while that in the samples thermally treated at 100 Centigrade during 1 minute it is observed a slipping in the first peak from 220 to 280 Centigrade, while the second stays in 360 Centigrade. (Author)

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

International Nuclear Information System (INIS)

Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

2013-01-01

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

Electron irradiation induced deep centers in hydrothermally grown ZnO

International Nuclear Information System (INIS)

Fang, Z.-Q.; Claflin, B.; Look, D. C.; Farlow, G. C.

2007-01-01

An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ∼10 8 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation energy of 0.24 eV and is possibly related to Li Zn acceptors. However, the electron irradiation introduces a new trap with an activation energy of 0.15 eV, and other traps of energy 0.30 and 0.80 eV, respectively. From a comparison of these results with positron annihilation experiments and density functional theory, we conclude that the 0.15-eV trap may be related to V Zn

Residual and Solubility trapping during Geological CO2 storage : Numerical and Experimental studies

OpenAIRE

Rasmusson, Maria

2018-01-01

Geological storage of carbon dioxide (CO2) in deep saline aquifers mitigates atmospheric release of greenhouse gases. To estimate storage capacity and evaluate storage safety, knowledge of the trapping mechanisms that retain CO2 within geological formations, and the factors affecting these is fundamental. The objective of this thesis is to study residual and solubility trapping mechanisms (the latter enhanced by density-driven convective mixing), specifically in regard to their dependency on ...

Large lattice relaxation deep levels in neutron-irradiated GaN

International Nuclear Information System (INIS)

Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

2005-01-01

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out

Electromagnetic trapping of neutral atoms

International Nuclear Information System (INIS)

Metcalf, H.J.

1986-01-01

Cooling and trapping of neutral atoms is a new branch of applied physics that has potential for application in many areas. The authors present an introduction to laser cooling and magnetic trapping. Some basic ideas and fundamental limitations are discussed, and the first successful experiments are reviewed. Trapping a neutral object depends on the interaction between an inhomogeneous electromagnetic field and a multiple moment that results in the exchange of kinetic for potential energy. In neutral atom traps, the potential energy must be stored as internal atomic energy, resulting in two immediate and extremely important consequences. First, the atomic energy levels will necessarily shift as the atoms move in the trap, and, second, practical traps for ground state neutral atoms atr necessarily very shallow compared to thermal energy. This small depth also dictates stringent vacuum requirements because a trapped atom cannot survive a single collision with a thermal energy background gas molecule. Neutral trapping, therefore, depends on substantial cooling of a thermal atomic sample and is inextricably connected with the cooling process

The study of the deep levels of In/CdTe Schottky diode

International Nuclear Information System (INIS)

Kim, Hey-kyeong; Jeen, Gwangsoo; Nam, S.H.

2000-01-01

p-type CdTe is an important component of II-VI compound based solar cells as well as a promising substance for X- and gamma-ray detector. Despite that a lot of researches has been performed on CdTe, the manufacture of large homogeneous ingots with high resistivity (ρ) and a high value of lifetime-mobility product (μτ) still difficult. Both ρ and μτ, which determine detection properties, are strongly dependent on the impurity and defect levels of crystals. As in general, deep defect levels act as recombination centers and influence strongly the efficiency of the detector material, so information about deep levels is an essential need. To estimate deep levels of semiconductor materials, the TSC (thermally stimulated current), TSCD (thermally stimulated capacitor discharges) and admittance spectroscopic method are used. In order to study the deep levels of CdTe, the samples were taken from a CdTe-crystal grown by the vertical Bridgman method. From this boule single crystalline samples of about 0.5 mm thickness were prepared. All samples were initially p-type which was determined by the hot-probe method. In-CdTe Schottky diodes were prepared by the process of evaporation of In in the vacuum of 10 -6 Torr on surface of CdTe. The area of the deposited contact was equal to 1.626 mm 2 . As ohmic contacts, dots of Au soldered for 30 min. in temperature 160 deg C. Measurements were carried out within a 100-250 K temperature and 1-10 kHz frequency range. Related Arrhenius plots, i.e. the experimentally determined emission rates corresponding to the signal maximum divided by the square of temperature as a function of reciprocal temperature are plotted. The experimental data were best fitted by the least-square method. The fitting yielded the defect level energies E T . In this study, by using admittance spectroscopy measurements, we presented the information about the energy and concentration of the defect levels inside the gap, in order to improve the quality of

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

Science.gov (United States)

Hema Lata Rao, M.; Narasimha Murty, N. V. L.

2015-01-01

An improved analytical model for the current—voltage (I-V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I-V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I-V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates.

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

International Nuclear Information System (INIS)

Rao, M. Hema Lata; Murty, N. V. L. Narasimha

2015-01-01

An improved analytical model for the current—voltage (I–V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I–V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I–V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates. (semiconductor devices)

The calculation of deep levels in semiconductors by using a recursion method for super-cells

International Nuclear Information System (INIS)

Wong Yongliang.

1987-01-01

The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

Optical Trapping of Ion Coulomb Crystals

Science.gov (United States)

Schmidt, Julian; Lambrecht, Alexander; Weckesser, Pascal; Debatin, Markus; Karpa, Leon; Schaetz, Tobias

2018-04-01

The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

Nanophotonic light-trapping theory for solar cells

Energy Technology Data Exchange (ETDEWEB)

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui [Stanford University, Ginzton Lab, Stanford, CA (United States)

2011-11-15

Conventional light-trapping theory, based on a ray-optics approach, was developed for standard thick photovoltaic cells. The classical theory established an upper limit for possible absorption enhancement in this context and provided a design strategy for reaching this limit. This theory has become the foundation for light management in bulk silicon PV cells, and has had enormous influence on the optical design of solar cells in general. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the standard limit can be substantially surpassed when optical modes in the active layer are confined to deep-subwavelength scale, opening new avenues for highly efficient next-generation solar cells. (orig.)

Should the U.S. proceed to consider licensing deep geological disposal of high-level nuclear waste

International Nuclear Information System (INIS)

Curtiss, J.R.

1993-01-01

The United States, as well as other countries facing the question of how to handle high-level nuclear waste, has decided that the most appropriate means of disposal is in a deep geologic repository. In recent years, the Radioactive Waste Management Committee of the Nuclear Energy Agency has developed several position papers on the technical achievability of deep geologic disposal, thus demonstrating the serious consideration of deep geologic disposal in the international community. The Committee has not, as yet, formally endorsed disposal in a deep geologic repository as the preferred method of handling high-level nuclear waste. The United States, on the other hand, has studied the various methods of disposing of high-level nuclear waste, and has determined that deep geologic disposal is the method that should be developed. The purpose of this paper is to present a review of the United States' decision on selecting deep geologic disposal as the preferred method of addressing the high-level waste problem. It presents a short history of the steps taken by the U.S. in determining what method to use, discusses the NRC's waste Confidence Decision, and provides information on other issues in the U.S. program such as reconsideration of the final disposal standard and the growing inventory of spent fuel in storage

Status of THe-Trap

Energy Technology Data Exchange (ETDEWEB)

Streubel, Sebastian; Eronen, Tommi; Hoecker, Martin; Ketter, Jochen; Blaum, Klaus [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Van Dyck, Robert S. Jr. [Department of Physics, University of Washington, Seattle, WA (United States)

2013-07-01

THe-Trap (short for Tritium-{sup 3}He Trap) is a Penning-trap setup dedicated to measure the {sup 3}H to {sup 3}He mass-ratio with a relative uncertainty of better than 10{sup -11}. The ratio is of relevance for the KArlsruhe TRItium Neutrino experiment (KATRIN), which aims to measure the electron anti-neutrino mass, by measuring the shape of the β-decay energy spectrum close to its endpoint. An independent measurement of the {sup 3}H to {sup 3}He mass-ratio pins down this endpoint, and thus will help to determine the systematics of KATRIN. The trap setup consists of two Penning-traps: One trap for precision measurements, the other trap for ion storage. Ideally, the trap content will be periodically switched, which reduces the time between the measurements of the two ions' motional frequencies. In 2012, a mass ratio measurement of {sup 12}C{sup 4+} to {sup 14}N{sup 5+} was performed to characterize systematic effects of the traps. This measurement yielded a accuracy of 10{sup -9}. Further investigations revealed that a major reason for the modest accuracy is the large axial amplitude of ∼100 μm, compared to a ideal case of 3 μm at 4 K. In addition, relative magnetic fluctuations at a 3 x 10{sup -10} level on a 10 h timescale need to be significantly improved. In this contribution, the aforementioned findings and further systematic studies will be presented.

Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

Science.gov (United States)

Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

2014-03-01

Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

Discovery of deep and shallow trap states from step structures of rutile TiO2 vicinal surfaces by second harmonic and sum frequency generation spectroscopy

International Nuclear Information System (INIS)

Takahashi, Hiroaki; Watanabe, Ryosuke; Miyauchi, Yoshihiro; Mizutani, Goro

2011-01-01

In this report, local electronic structures of steps and terraces on rutile TiO 2 single crystal faces were studied by second harmonic and sum frequency generation (SHG/SFG) spectroscopy. We attained selective measurement of the local electronic states of the step bunches formed on the vicinal (17 18 1) and (15 13 0) surfaces using a recently developed step-selective probing technique. The electronic structures of the flat (110)-(1x1) (the terrace face of the vicinal surfaces) and (011)-(2x1) surfaces were also discussed. The SHG/SFG spectra showed that step structures are mainly responsible for the formation of trap states, since significant resonances from the trap states were observed only from the vicinal surfaces. We detected deep hole trap (DHT) states and shallow electron trap (SET) states selectively from the step bunches on the vicinal surfaces. Detailed analysis of the SHG/SFG spectra showed that the DHT and SET states are more likely to be induced at the top edges of the step bunches than on their hillsides. Unlike the SET states, the DHT states were observed only at the step bunches parallel to [1 1 1][equivalent to the step bunches formed on the (17 18 1) surface]. Photocatalytic activity for each TiO 2 sample was also measured through methylene blue photodegradation reactions and was found to follow the sequence: (110) < (17 18 1) < (15 13 0) < (011), indicating that steps along [0 0 1] are more reactive than steps along [1 1 1]. This result implies that the presence of the DHT states observed from the step bunches parallel to [1 1 1] did not effectively contribute to the methylene blue photodegradation reactions.

Deep subcritical levels measurements dependents upon kinetic distortion factors

International Nuclear Information System (INIS)

Pan Shibiao; Li Xiang; Fu Guo'en; Huang Liyuan; Mu Keliang

2013-01-01

The measurement of deep subcritical levels, with the increase of subcriticality, showed that the results impact on the kinetic distortion effect, along with neutron flux strongly deteriorated. Using the diffusion theory, calculations have been carried out to quantify the kinetic distortion correction factors in subcritical systems, and these indicate that epithermal neutron distributions are strongly affected by kinetic distortion. Subcriticality measurements in four different rod-state combination at the zero power device was carried out. The test data analysis shows that, with increasing subcriticality, kinetic distortion effect correction factor gradually increases from 1.052 to 1.065, corresponding reactive correction amount of 0.78β eff ∼ 3.01β eff . Thus, it is necessary to consider the kinetic distortion effect in the deep subcritical reactivity measurements. (authors)

Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

2016-04-01

To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

Review of statistical analysis of trapped gas

International Nuclear Information System (INIS)

Schmittroth, F.A.

1996-01-01

A review was conducted of trapped gas estimates in Hanford waste tanks. Tank waste levels were found to correlate with barometric pressure changes giving the possibility to infer amounts of trapped gas. Previous models of the tank waste level were extended to include other phenomena such as evaporation in a more complete description of tank level changes

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

DEFF Research Database (Denmark)

Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

2009-01-01

 During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

Deep-level optical spectroscopy investigation of N-doped TiO2 films

International Nuclear Information System (INIS)

Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

2005-01-01

N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

Study and microscopic characterization of the cadmium telluride deep levels

International Nuclear Information System (INIS)

Biglari, B.

1989-05-01

The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H + are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects [fr

Optical Trapping of Ion Coulomb Crystals

Directory of Open Access Journals (Sweden)

Julian Schmidt

2018-05-01

Full Text Available The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

Screening the Hanford tanks for trapped gas

International Nuclear Information System (INIS)

Whitney, P.

1995-10-01

The Hanford Site is home to 177 large, underground nuclear waste storage tanks. Hydrogen gas is generated within the waste in these tanks. This document presents the results of a screening of Hanford's nuclear waste storage tanks for the presence of gas trapped in the waste. The method used for the screening is to look for an inverse correlation between waste level measurements and ambient atmospheric pressure. If the waste level in a tank decreases with an increase in ambient atmospheric pressure, then the compressibility may be attributed to gas trapped within the waste. In this report, this methodology is not used to estimate the volume of gas trapped in the waste. The waste level measurements used in this study were made primarily to monitor the tanks for leaks and intrusions. Four measurement devices are widely used in these tanks. Three of these measure the level of the waste surface. The remaining device measures from within a well embedded in the waste, thereby monitoring the liquid level even if the liquid level is below a dry waste crust. In the past, a steady rise in waste level has been taken as an indicator of trapped gas. This indicator is not part of the screening calculation described in this report; however, a possible explanation for the rise is given by the mathematical relation between atmospheric pressure and waste level used to support the screening calculation. The screening was applied to data from each measurement device in each tank. If any of these data for a single tank indicated trapped gas, that tank was flagged by this screening process. A total of 58 of the 177 Hanford tanks were flagged as containing trapped gas, including 21 of the 25 tanks currently on the flammable gas watch list

Lack of mutagens in deep-fat-fried foods obtained at the retail level.

Science.gov (United States)

Taylor, S L; Berg, C M; Shoptaugh, N H; Scott, V N

1982-04-01

The basic methylene chloride extract from 20 of 30 samples of foods fried in deep fat failed to elicit any mutagenic response that could be detected in the Salmonella typhimurium/mammalian microsome assay. The basic extracts of the remaining ten samples (all three chicken samples studied, two of the four potato-chip samples, one of four corn-chip samples, the sample of onion rings, two of six doughnuts, and one of three samples of french-fried potato) showed evidence of weak mutagenic activity. In these samples, amounts of the basic extract equivalent to 28.5-57 g of the original food sample were required to produce revertants at levels of 2.6-4.8 times the background level. Only two of the acidic methylene chloride extracts from the 30 samples exhibited mutagenic activity greater than 2.5 times the background reversion level, and in both cases (one corn-chip and one shrimp sample) the mutagenic response was quite weak. The basic extract of hamburgers fried in deep fat in a home-style fryer possessed higher levels of mutagenic activity (13 times the background reversion level). However, the mutagenic activity of deep-fried hamburgers is some four times lower than that of pan-fried hamburgers.

Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

International Nuclear Information System (INIS)

Pettersson, H.

1993-01-01

This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

NARCIS (Netherlands)

Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

2014-01-01

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Elleuch, Omar; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2015-01-01

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor

Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

International Nuclear Information System (INIS)

Shi Li-Yang; Shen Bo; Wang Ping; Yan Jian-Chang; Wang Jun-Xi

2014-01-01

By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al x Ga 1−x N epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al x Ga 1−x N films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al x Ga 1−x N films. (condensed matter: structural, mechanical, and thermal properties)

Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions

NARCIS (Netherlands)

Nanu, M.; Boulch, F.; Schoonman, J.; Goossens, A.

2005-01-01

Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to

Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

International Nuclear Information System (INIS)

Stahlbush, R.E.; Hughes, H.L.; Krull, W.A.

1993-01-01

Silicon-on-insulator, SOI, technologies are being aggressively pursued to produce high density, high speed, radiation tolerant electronics. The dielectric isolation of the buried oxide makes it possible to design integrated circuits that greatly minimize single event upset and eliminate dose-rate induced latchup and upset. The reduction of excess-silicon related defects in SIMOX by the supplemental implantation of oxygen has been examined. The supplemental implant is 6% of the oxygen dose used to form the buried oxide, and is followed by a 1,000 C anneal, in contrast to the >1,300 C anneal used to form the buried oxide layer of SIMOX. The defects examined include shallow electron traps, deep hole traps, and silicon clusters. The radiation-induced shallow electron and deep hole trapping are measured by cryogenic detrapping and isothermal annealing techniques. The low-field (3 to 6 MV/cm) electron tunneling is interpreted as due to a two phase mixture of stoichiometric SiO 2 and Si clusters a few nm in size. Single and triple SIMOS samples have been examined. All of the defects are reduced by the supplemental oxygen processing. Shallow electron trapping is reduced by an order of magnitude. Because of the larger capture cross section for hole trapping, hole trapping is not reduced as much. The low-field electron tunneling due to Si clusters is also significantly reduced. Both uniform and nonuniform electron tunneling have been observed in SIMOX samples without supplement processing. In samples exhibiting only uniform tunneling, electron capture at holes has been observed. The nonuniform tunneling is superimposed upon the uniform tunneling and is characterized by current spiking

Deuterium trapping in tungsten

Science.gov (United States)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

International Nuclear Information System (INIS)

Poon, M.

2004-01-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D 2 molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

Energy Technology Data Exchange (ETDEWEB)

Poon, M

2004-07-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D{sub 2} molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Multi-level deep supervised networks for retinal vessel segmentation.

Science.gov (United States)

Mo, Juan; Zhang, Lei

2017-12-01

Changes in the appearance of retinal blood vessels are an important indicator for various ophthalmologic and cardiovascular diseases, including diabetes, hypertension, arteriosclerosis, and choroidal neovascularization. Vessel segmentation from retinal images is very challenging because of low blood vessel contrast, intricate vessel topology, and the presence of pathologies such as microaneurysms and hemorrhages. To overcome these challenges, we propose a neural network-based method for vessel segmentation. A deep supervised fully convolutional network is developed by leveraging multi-level hierarchical features of the deep networks. To improve the discriminative capability of features in lower layers of the deep network and guide the gradient back propagation to overcome gradient vanishing, deep supervision with auxiliary classifiers is incorporated in some intermediate layers of the network. Moreover, the transferred knowledge learned from other domains is used to alleviate the issue of insufficient medical training data. The proposed approach does not rely on hand-crafted features and needs no problem-specific preprocessing or postprocessing, which reduces the impact of subjective factors. We evaluate the proposed method on three publicly available databases, the DRIVE, STARE, and CHASE_DB1 databases. Extensive experiments demonstrate that our approach achieves better or comparable performance to state-of-the-art methods with a much faster processing speed, making it suitable for real-world clinical applications. The results of cross-training experiments demonstrate its robustness with respect to the training set. The proposed approach segments retinal vessels accurately with a much faster processing speed and can be easily applied to other biomedical segmentation tasks.

Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics

Science.gov (United States)

Beling, C. D.; Fung, S.; Au, H. L.; Ling, C. C.; Reddy, C. V.; Deng, A. H.; Panda, B. K.

1997-05-01

Recent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 10 6 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.

Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

Science.gov (United States)

Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

2008-01-01

Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

Human-level control through deep reinforcement learning

Science.gov (United States)

Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

2015-02-01

The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

Human-level control through deep reinforcement learning.

Science.gov (United States)

Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

2015-02-26

The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

Effect of deep dislocation levels in silicon on the properties of p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

1988-07-01

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

Trapping of self-interstitials at manganese atoms in electron-irradiated dilute AlMn alloys

International Nuclear Information System (INIS)

Bartels, A.; Dworschak, F.

1985-01-01

Dilute AlMn alloys were irradiated isothermally at different temperatures in stage II with 1.8 MeV electrons and the resistivity damage rates were measured as a function of the residual resistivity increase. The results demonstrate that Mn atoms provide deep traps at least up to 150 K for mobile interstitials. A quantitative evaluation of the data with respect to trapping radii is somewhat handicapped by the fact that the resistivity contribution of a Mn-Al interstitial complex was found to be considerably less than the sum of the resistivity contributions of an isolated solute Mn atom and an Al self-interstitial. The results can be explained by a model which assumes that both the trapping radius and the resistivity contribution of solute-self-interstitial complexes increase with the number of trapped interstitials. (author)

Deep geologic storage of high level radioactive wastes: conceptual generic designs

International Nuclear Information System (INIS)

1995-01-01

This report summarizes the studies on deep geologic storage of radioactive wastes and specially for the high-level radioactive wastes. The study is focussed to the geotechnical assessment and generic-conceptual designs. Methodology analysis, geotechnical feasibility, costs and operation are studied

TL Dating Technique Based on a Trap Model and its Application as a Geochronometer for Granitic Quartz

International Nuclear Information System (INIS)

Han, Y.; Li, H.; Tso, Y.W.

1999-01-01

A trap model is introduced to describe the behaviours of both thermally sensitive and radiation sensitive TL traps. The former are relatively shallow traps. The latter are deep traps, in which population increases with exposure to alpha dose. Thermal decay of both types of traps at ambient temperature is dependent on the trap lifetimes. A trap's population can be measured as TL sensitivity to a laboratory test dose. The trap model has been supported by observations of age dependent TL signals from granitic quartz samples with different crystallisation ages. The trap lifetimes are from 1.98 x 10 9 to 5.36 x 10 15 years estimated using the isothermal decay experiment with the assumption of first order kinetics. Dating techniques are proposed based on the trap model. For old granites (>400 Ma), ages can be obtained by measuring the total exposed alpha dose using the additive alpha dose method, whereas for young granites (<400 Ma), ages can also be obtained by interpolating the TL sensitivity to a curve of TL sensitivities for known ages. (author)

DeepPy: Pythonic deep learning

DEFF Research Database (Denmark)

Larsen, Anders Boesen Lindbo

This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

Hydrogen trapping in and release from tungsten: modeling and comparison with graphite with regard to its use as fusion reactor material

International Nuclear Information System (INIS)

Franzen, P.; Garcia-Rosales, C.; Plank, H.; Alimov, V.Kh.

1997-01-01

Trapping and release of deuterium implanted in tungsten is investigated by modeling the results of reemission, thermal and isothermal desorption experiments. Rate coefficients and activation energies for diffusion, trapping and detrapping are derived. Hydrogen atoms are able to diffuse deep into tungsten, establishing a solute amount of the same order of magnitude as the trapped one. This 'diffusion zone' exceeds the implantation zone by more than two orders of magnitude, even at room temperature. The solute amount of hydrogen in tungsten depends only slightly on the incident ion energy, but scales with implantation fluence. This high amount of solute hydrogen is the main difference of tungsten compared to graphite where nearly all hydrogen is trapped in the implantation zone, the solute amount being orders of magnitude lower. The resulting unlimited accumulation of hydrogen in tungsten deep in the material down to the backward surface disadvantages tungsten as fusion reactor material with regard to hydrogen recycling properties. (orig.)

High levels of natural radionuclides in a deep-sea infaunal xenophyophore

Energy Technology Data Exchange (ETDEWEB)

Swinbanks, D D; Shirayama, Y

1986-03-27

The paper concerns the high levels of natural radionuclides in a deep-sea infaunal xenophyophore from the Izu-Ogasawara Trench. Measured /sup 210/Po activities and barium contents of various parts of Occultammina profunda and the surrounding sediment are given, together with their estimated /sup 210/Pb and /sup 226/Ra activities. The data suggest that xenophyphores are probably subject to unusually high levels of natural radiation.

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

International Nuclear Information System (INIS)

Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

2012-01-01

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

Chiral Rayleigh particles discrimination in dynamic dual optical traps

International Nuclear Information System (INIS)

Carretero, Luis; Acebal, Pablo; Blaya, Salvador

2017-01-01

Highlights: • A chiral optical conveyor belt for enantiomeric separation of nanopar-ticles is numerically demonstrated. • Chiral resolution has been theoretically analyzed for chiral spheres immersed in water. • Electromagnetic fields have been designed for obtaining Chiral selective optical tweezers to separate enantiomers in different spatial regions. - Abstract: A chiral optical conveyor belt for enantiomeric separation of nanoparticles is numerically demonstrated by using different types of counter propagating elliptical Laguerre Gaussian beams with different beam waist and topological charge. The analysis of chiral resolution has been made for particles immersed in water demonstrating that in the analyzed conditions one type of enantiomer is trapped in a deep potential and the others are transported by the chiral conveyor toward another trap located in a different geometrical region.

Electrical and optical deep level spectroscopy on Os doped p-InP

International Nuclear Information System (INIS)

Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

1997-01-01

Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

Science.gov (United States)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Science.gov (United States)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

How to detect trap cluster systems?

International Nuclear Information System (INIS)

Mandowski, Arkadiusz

2008-01-01

Spatially correlated traps and recombination centres (trap-recombination centre pairs and larger clusters) are responsible for many anomalous phenomena that are difficult to explain in the framework of both classical models, i.e. model of localized transitions (LT) and the simple trap model (STM), even with a number of discrete energy levels. However, these 'anomalous' effects may provide a good platform for identifying trap cluster systems. This paper considers selected cluster-type effects, mainly relating to an anomalous dependence of TL on absorbed dose in the system of isolated clusters (ICs). Some consequences for interacting cluster (IAC) systems, involving both localized and delocalized transitions occurring simultaneously, are also discussed

Pore scale study of multiphase multicomponent reactive transport during CO2 dissolution trapping

Science.gov (United States)

Chen, Li; Wang, Mengyi; Kang, Qinjun; Tao, Wenquan

2018-06-01

Solubility trapping is crucial for permanent CO2 sequestration in deep saline aquifers. For the first time, a pore-scale numerical method is developed to investigate coupled scCO2-water two-phase flow, multicomponent (CO2(aq), H+, HCO3-, CO32- and OH-) mass transport, heterogeneous interfacial dissolution reaction, and homogeneous dissociation reactions. Pore-scale details of evolutions of multiphase distributions and concentration fields are presented and discussed. Time evolutions of several variables including averaged CO2(aq) concentration, scCO2 saturation, and pH value are analyzed. Specific interfacial length, an important variable which cannot be determined but is required by continuum models, is investigated in detail. Mass transport coefficient or efficient dissolution rate is also evaluated. The pore-scale results show strong non-equilibrium characteristics during solubility trapping due to non-uniform distributions of multiphase as well as slow mass transport process. Complicated coupling mechanisms between multiphase flow, mass transport and chemical reactions are also revealed. Finally, effects of wettability are also studied. The pore-scale studies provide deep understanding of non-linear non-equilibrium multiple physicochemical processes during CO2 solubility trapping processes, and also allow to quantitatively predict some important empirical relationships, such as saturation-interfacial surface area, for continuum models.

A review on deep-sea fungi: Occurrence, diversity and adaptions

Digital Repository Service at National Institute of Oceanography (India)

Raghukumar, C.; Damare, S.R.; Singh, P.

soil. In contrast to land, however, most studies on deep-sea sediments have focused exclusively on bacteria and have demonstrated their intense metabolic activities therein (Turley and Dixon 2002). The fungi and their role in the deep-sea sediments... polymerization and form brown-coloured products, constituting humus (Tisdall and Oades 1982). The humic material combines with soil particles to form microaggregates. Fungal hyphae further act as binding agents to form macroaggregates by trapping fine particles...

A simple trapping method of exhaled water using an ice-cooled tube to monitor the tritium level in human body

International Nuclear Information System (INIS)

Nogawa, Norio; Makide, Yoshihiro

1994-01-01

A convenient and efficient method is developed for the trapping of water in exhaled air. A bent-V-shaped glass sampling tube was immersed in iced water and exhaled air was introduced into the tube through a plastic straw. The trapping efficiency of exhaled water was equivalent to those with more complex and troublesome methods. Using anywhere available ice, the water in exhaled air can be rapidly collected with this method and the tritium level in the body will be quickly obtained. (author)

High-k shallow traps observed by charge pumping with varying discharging times

International Nuclear Information System (INIS)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

2013-01-01

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

International Nuclear Information System (INIS)

Charles Doret, S; Amini, Jason M; Wright, Kenneth; Volin, Curtis; Killian, Tyler; Ozakin, Arkadas; Denison, Douglas; Hayden, Harley; Pai, C-S; Slusher, Richart E; Harter, Alexa W

2012-01-01

Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed characterization of a new linear trap, microfabricated with scalable complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited to this challenge. Forty-four individually controlled dc electrodes provide the many degrees of freedom required to construct anharmonic potential wells, shuttle ions, merge and split ion chains, precisely tune secular mode frequencies, and adjust the orientation of trap axes. Microfabricated capacitors on dc electrodes suppress radio-frequency pickup and excess micromotion, while a top-level ground layer simplifies modeling of electric fields and protects trap structures underneath. A localized aperture in the substrate provides access to the trapping region from an oven below, permitting deterministic loading of particular isotopic/elemental sequences via species-selective photoionization. The shapes of the aperture and radio-frequency electrodes are optimized to minimize perturbation of the trapping pseudopotential. Laboratory experiments verify simulated potentials and characterize trapping lifetimes, stray electric fields, and ion heating rates, while measurement and cancellation of spatially-varying stray electric fields permits the formation of nearly-equally spaced ion chains. (paper)

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

International Nuclear Information System (INIS)

Klein, P B; Binari, S C

2003-01-01

This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

International Nuclear Information System (INIS)

Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

2015-01-01

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

High-level radioactive waste disposal in the deep ocean

International Nuclear Information System (INIS)

Hill, H.W.

1977-01-01

A joint programme has begun between the Fisheries Laboratory, Lowestoft and the Institute of Oceanographic Sciences, Wormley to study the dispersion of radioactivity in the deep ocean arising from the possible dumping of high level waste on the sea bed in vitrified-glass form which would permit slow leakage over a long term scale. The programme consists firstly of the development of a simple diffusion/advection model for the dispersion of radioactivity in a closed and finite ocean, which overcomes many of the criticisms of the earlier model proposed by Webb and Morley. Preliminary results from this new model are comparable to those of the Webb-Morley model for radio isotopes with half-lives of 10-300 years but are considerably more restrictive outside this range, particularly for those which are much longer-lived. The second part of the programme, towards which the emphasis is directed, concerns the field programme planned to measure the advection and diffusion parameters in the deeper layers of the ocean to provide realistic input parameters to the model and increase our fundamental understanding of the environment in which the radioactive materials may be released. The first cruises of the programme will take place in late 1976 and involve deep current meter deployments and float dispersion experiments around the present NEA dump site with some sediment sampling, so that adsorption experiments can be started on typical deep sea sediments. The programme will expand the number of long-term deep moored stations over the next five years and include further float experiments, CTD profiling, and other physical oceanography. In the second half of the 5-year programme, attempts will be made to measure diffusion parameters in the deeper layers of the ocean using radioactive tracers

Ar plasma induced deep levels in epitaxial n-GaAs

International Nuclear Information System (INIS)

Venter, A.; Nyamhere, C.; Botha, J. R.; Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M.; Kolkovsky, V. l.

2012-01-01

Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E c - 0.04 eV, E c - 0.07 eV, E c - 0.19 eV, E c - 0.31 eV, E c - 0.53 eV, and E c - 0.61 eV). The trap, E c - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E c - 0.31 eV and E c - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

International Nuclear Information System (INIS)

Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

2015-01-01

Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

Hydrogen trapping energy levels and hydrogen diffusion at high and low strain rates (~10{sup 5} s{sup −1} and 10{sup −7} s{sup −1}) in lean duplex stainless steel

Energy Technology Data Exchange (ETDEWEB)

Silverstein, R., E-mail: barrav@post.bgu.ac.il; Eliezer, D.

2016-09-30

Duplex stainless steels (DSS) alloys are high strength steels combined with ductility and excellent resistance to stress corrosion cracking, which makes them attractive for the pressure vessels or underwater pipelines industries. Hydrogen embrittlement (HE) is caused by the action of hydrogen in combination with residual or applied stress and can lead to the mechanical degradation of a material. Dynamic and quasi-static experiments were conducted at room temperature and strain rates of 10{sup 5} s{sup −1} and 10{sup −7} s{sup −1} on gas-phase hydrogen charged DSS. Hydrogen trapping in the various defects and its effect on the mechanical properties are discussed in details. A linear model of Lee and Lee was applied to calculate the trap activation energies. It was found that lower strain rates (~10{sup −7} s{sup −1}) will create less deep hydrogen trapping energies values; ~40% lower than in non-loaded sample. In addition, higher dynamic pressure will create higher trapping energy sites for hydrogen. Based on our experimental studies we developed an analytical model for hydrogen trapping. We have found that the strain rate has a direct influence on both hydrogen diffusion and hydrogen potential trapping sites. During deformation processes created at low strain rates (~10{sup −7} s{sup −1}) hydrogen has enough time to migrate with dislocations from deeper potential trapping sites to lower potential trapping sites.

Deep impurity levels in n-type copper oxides

International Nuclear Information System (INIS)

Ovchinnikov, S.G.

1994-01-01

The density of Nd 2-x Ce x CuO 4 monoparticle states was calculated by the method of precise diagonalization of multielectron hamiltonian of 6-zone model for CuO cluster. Emergence of a deep impurity state of a symmetry in the middle of dielectric slit, which is a mixture of d z 2-states of copper and a 1 -molecular orbital of oxygen, is shown. Fluctuation of parameters of p-d jump and energies of charge transfer provide additional fine impurity levels near the bottom of conductivity zone and ceiling of valency zone. 30 refs., 4 figs

The use (and misuse) of sediment traps in coral reef environments: Theory, observations, and suggested protocols

Science.gov (United States)

Storlazzi, C.D.; Field, M.E.; Bothner, Michael H.

2011-01-01

Sediment traps are commonly used as standard tools for monitoring “sedimentation” in coral reef environments. In much of the literature where sediment traps were used to measure the effects of “sedimentation” on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about “sedimentation” on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height (H), trap mouth diameter (D), the height of the trap mouth above the substrate (z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

Trapping induced Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

International Nuclear Information System (INIS)

Eremin, V.; Li, Z.; Iljashenko, I.

1994-02-01

The trapping of both non-equilibrium electrons and holes by neutron induced deep levels in high resistivity silicon planar detectors have been observed. In the experiments Transient Current and Charge Techniques, with short laser light pulse excitation have been applied at temperature ranges of 77--300 k. Light pulse illumination of the front (p + ) and back (n + ) contacts of the detectors showed effective trapping and detrapping, especially for electrons. At temperatures lower than 150 k, the detrapping becomes non-efficient, and the additional negative charge of trapped electrons in the space charge region (SCR) of the detectors leads to dramatic transformations of the electric field due to the distortion of the effective space charge concentration N eff . The current and charge pulses transformation data can be explained in terms of extraction of electric field to the central part of the detector from the regions near both contacts. The initial field distribution may be recovered immediately by dropping reverse bias, which injects both electrons and holes into the space charge region. In the paper, the degree of the N eff distortions among various detectors irradiated by different neutron fluences are compared

Vapour trap development and operational experience

International Nuclear Information System (INIS)

Jansing, W.; Kirchner, G.; Menck, J.

1977-01-01

Sodium aerosols have the unpleasant characteristic that they deposit at places with low temperature level. This effect can be utilized when sodium aerosols are to be trapped at places which are determined beforehand. Thus vapour traps were developed which can filter sodium vapour from the cover gas. By this means the necessity was eliminated to heat all gas lines and gas systems with trace heaters just as all sodium lines are heated. It was of special interest for the INTERATOM to develop vapour traps which must not be changed or cleaned after a certain limited operating period. The vapour traps were supposed to enable maintenance free operation, i.e. they were to operate 'self cleaning'

Deep geologic repository for low and intermediate radioactive level waste in Canada

International Nuclear Information System (INIS)

Liu Jianqin; Li Honghui; Sun Qinghong; Yang Zhongtian

2012-01-01

Ontario Power Generation (OPG) is undergoing a project for the long-term management of low and intermediate level waste (LILW)-a deep geologic repository (DGR) project for low and intermediate level waste. The waste source term disposed, geologic setting, repository layout and operation, and safety assessment are discussed. It is expected to provide reference for disposal of low and intermediate level waste that contain the higher concentration of long-lived radionuclides in China. (authors)

Squid traps are a small type of fishing gear, but they represent one ...

African Journals Online (AJOL)

spamer

shallow waters (4–5 m, Boongerd and Rachaniyom. 1990). ... The trap is covered by coconut fronds and set from 4 to >40 m deep, hanging above the sea bottom with the ... frame covered with a polyethylene net of mesh size. 5–6 cm or a ...

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

International Nuclear Information System (INIS)

Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

2013-01-01

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

Economic injury level for the coffee berry borer (Coleoptera: Curculionidae: Scolytinae) using attractive traps in Brazilian coffee fields.

Science.gov (United States)

Fernandes, F L; Picanço, M C; Campos, S O; Bastos, C S; Chediak, M; Guedes, R N C; Silva, R S

2011-12-01

The currently existing sample procedures available for decision-making regarding the control of the coffee berry borer Hypothenemus hampei (Ferrari) (Coleoptera: Curculionidae: Scolytinae) are time-consuming, expensive, and difficult to perform, compromising their adoption. In addition, the damage functions incorporated in such decision levels only consider the quantitative losses, while dismissing the qualitative losses. Traps containing ethanol, methanol, and benzaldehyde may allow cheap and easy decision-making. Our objective was to determine the economic injury level (EIL) for the adults of the coffee berry borer by using attractant-baited traps. We considered both qualitative and quantitative losses caused by the coffee borer in estimating the EILs. These EILs were determined for conventional and organic coffee under high and average plant yield. When the quantitative losses caused by H. hampei were considered alone, the EILs ranged from 7.9 to 23.7% of bored berries for high and average-yield conventional crops, respectively. For high and average-yield organic coffee the ELs varied from 24.4 to 47.6% of bored berries, respectively. When qualitative and quantitative losses caused by the pest were considered together, the EIL was 4.3% of bored berries for both conventional and organic coffee. The EILs for H. hampei associated to the coffee plants in the flowering, pinhead fruit, and ripening fruit stages were 426, 85, and 28 adults per attractive trap, respectively.

Ar plasma induced deep levels in epitaxial n-GaAs

Energy Technology Data Exchange (ETDEWEB)

Venter, A.; Nyamhere, C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, V. l. [Technische Universitaet, Dresden, 01062 Dresden (Germany)

2012-01-01

Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E{sub c} - 0.04 eV, E{sub c} - 0.07 eV, E{sub c} - 0.19 eV, E{sub c} - 0.31 eV, E{sub c} - 0.53 eV, and E{sub c} - 0.61 eV). The trap, E{sub c} - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E{sub c} - 0.31 eV and E{sub c} - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

Reference design and operations for deep borehole disposal of high-level radioactive waste

International Nuclear Information System (INIS)

Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

2011-01-01

A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

Reference design and operations for deep borehole disposal of high-level radioactive waste.

Energy Technology Data Exchange (ETDEWEB)

Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

2011-10-01

A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

International Nuclear Information System (INIS)

Tsia, M.; Fung, S.; Beling, C.D.

2001-01-01

Recently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulating GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300 K. The EL2 level emission transients are clearly seen at temperatures around 300 K that yield E C -0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200 K. Possible reasons for these transients are discussed. (orig.)

Cooling and trapping neutral atoms with radiative forces

International Nuclear Information System (INIS)

Bagnato, V.S.; Castro, J.C.; Li, M.S.; Zilio, S.C.

1988-01-01

Techniques to slow and trap neutral atoms at high densities with radiative forces are discussed in this review articles. Among several methods of laser cooling, it is emphasized Zeeman Tuning of the electronic levels and frequency-sweeping techniques. Trapping of neutral atoms and recent results obtained in light and magnetic traps are discussed. Techniques to further cool atoms inside traps are presented and the future of laser cooling of neutral atoms by means of radiation pressure is discussed. (A.C.A.S.) [pt

High-k shallow traps observed by charge pumping with varying discharging times

Energy Technology Data Exchange (ETDEWEB)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

Self-generated zonal flows in the plasma turbulence driven by trapped-ion and trapped-electron instabilities

Energy Technology Data Exchange (ETDEWEB)

Drouot, T.; Gravier, E.; Reveille, T.; Collard, M. [Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54 506 Vandoeuvre-lès-Nancy Cedex (France)

2015-10-15

This paper presents a study of zonal flows generated by trapped-electron mode and trapped-ion mode micro turbulence as a function of two plasma parameters—banana width and electron temperature. For this purpose, a gyrokinetic code considering only trapped particles is used. First, an analytical equation giving the predicted level of zonal flows is derived from the quasi-neutrality equation of our model, as a function of the density fluctuation levels and the banana widths. Then, the influence of the banana width on the number of zonal flows occurring in the system is studied using the gyrokinetic code. Finally, the impact of the temperature ratio T{sub e}/T{sub i} on the reduction of zonal flows is shown and a close link is highlighted between reduction and different gyro-and-bounce-average ion and electron density fluctuation levels. This reduction is found to be due to the amplitudes of gyro-and-bounce-average density perturbations n{sub e} and n{sub i} gradually becoming closer, which is in agreement with the analytical results given by the quasi-neutrality equation.

Scanning deep level transient spectroscopy using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

1993-12-31

Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

Scanning deep level transient spectroscopy using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

1994-12-31

Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

76 FR 36511 - Fisheries of the Northeastern United States; Atlantic Deep-Sea Red Crab; Amendment 3

Science.gov (United States)

2011-06-22

...-BA22 Fisheries of the Northeastern United States; Atlantic Deep-Sea Red Crab; Amendment 3 AGENCY... the Atlantic Deep-Sea Red Crab Fishery Management Plan (FMP) (Amendment 3), incorporating a draft... current trap limit regulations state that red crab may not be harvested from gear other than a marked red...

Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

International Nuclear Information System (INIS)

Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1988-01-01

Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

Analyses of the deep borehole drilling status for a deep borehole disposal system

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Youl; Choi, Heui Joo; Lee, Min Soo; Kim, Geon Young; Kim, Kyung Su [KAERI, Daejeon (Korea, Republic of)

2016-05-15

The purpose of disposal for radioactive wastes is not only to isolate them from humans, but also to inhibit leakage of any radioactive materials into the accessible environment. Because of the extremely high level and long-time scale radioactivity of HLW(High-level radioactive waste), a mined deep geological disposal concept, the disposal depth is about 500 m below ground, is considered as the safest method to isolate the spent fuels or high-level radioactive waste from the human environment with the best available technology at present time. Therefore, as an alternative disposal concept, i.e., deep borehole disposal technology is under consideration in number of countries in terms of its outstanding safety and cost effectiveness. In this paper, the general status of deep drilling technologies was reviewed for deep borehole disposal of high level radioactive wastes. Based on the results of these review, very preliminary applicability of deep drilling technology for deep borehole disposal analyzed. In this paper, as one of key technologies of deep borehole disposal system, the general status of deep drilling technologies in oil industry, geothermal industry and geo scientific field was reviewed for deep borehole disposal of high level radioactive wastes. Based on the results of these review, the very preliminary applicability of deep drilling technology for deep borehole disposal such as relation between depth and diameter, drilling time and feasibility classification was analyzed.

A Computer Model of Insect Traps in a Landscape

Science.gov (United States)

Manoukis, Nicholas C.; Hall, Brian; Geib, Scott M.

2014-11-01

Attractant-based trap networks are important elements of invasive insect detection, pest control, and basic research programs. We present a landscape-level, spatially explicit model of trap networks, focused on detection, that incorporates variable attractiveness of traps and a movement model for insect dispersion. We describe the model and validate its behavior using field trap data on networks targeting two species, Ceratitis capitata and Anoplophora glabripennis. Our model will assist efforts to optimize trap networks by 1) introducing an accessible and realistic mathematical characterization of the operation of a single trap that lends itself easily to parametrization via field experiments and 2) allowing direct quantification and comparison of sensitivity between trap networks. Results from the two case studies indicate that the relationship between number of traps and their spatial distribution and capture probability under the model is qualitatively dependent on the attractiveness of the traps, a result with important practical consequences.

Experimental pseudo-symmetric trap EPSILON

International Nuclear Information System (INIS)

Skovoroda, A.A.; Arsenin, V.V.; Dlougach, E.D.; Kulygin, V.M.; Kuyanov, A.Yu.; Timofeev, A.V.; Zhil'tsov, V.A.; Zvonkov, A.V.

2001-01-01

Within the framework of the conceptual project 'Adaptive Plasma EXperiment' a trap with the closed magnetic field lines 'Experimental Pseudo-Symmetric trap' is examined. The project APEX is directed at the theoretical and experimental development of physical foundations for stationary thermonuclear reactor on the basis of an alternative magnetic trap with tokamak-level confinement of high β plasma. The fundamental principle of magnetic field pseudosymmetry that should be satisfied for plasma to have tokamak-like confinement is discussed. The calculated in paraxial approximation examples of pseudosymmetric curvilinear elements with poloidal direction of B isolines are adduced. The EPSILON trap consisting of two straight axisymmetric mirrors linked by two curvilinear pseudosymmetric elements is considered. The plasma currents are short-circuited within the curvilinear element what increases the equilibrium β. The untraditional scheme of MHD stabilization of a trap with the closed field lines by the use of divertor inserted into axisymmetric mirror is analyzed. The experimental installation EPSILON-OME that is under construction for experimental check of divertor stabilization is discussed. The possibility of ECR plasma production in EPSILON-OME under conditions of high density and small magnetic field is examined. (author)

NATURAL GAS RESOURCES IN DEEP SEDIMENTARY BASINS

Energy Technology Data Exchange (ETDEWEB)

Thaddeus S. Dyman; Troy Cook; Robert A. Crovelli; Allison A. Henry; Timothy C. Hester; Ronald C. Johnson; Michael D. Lewan; Vito F. Nuccio; James W. Schmoker; Dennis B. Riggin; Christopher J. Schenk

2002-02-05

From a geological perspective, deep natural gas resources are generally defined as resources occurring in reservoirs at or below 15,000 feet, whereas ultra-deep gas occurs below 25,000 feet. From an operational point of view, ''deep'' is often thought of in a relative sense based on the geologic and engineering knowledge of gas (and oil) resources in a particular area. Deep gas can be found in either conventionally-trapped or unconventional basin-center accumulations that are essentially large single fields having spatial dimensions often exceeding those of conventional fields. Exploration for deep conventional and unconventional basin-center natural gas resources deserves special attention because these resources are widespread and occur in diverse geologic environments. In 1995, the U.S. Geological Survey estimated that 939 TCF of technically recoverable natural gas remained to be discovered or was part of reserve appreciation from known fields in the onshore areas and State waters of the United. Of this USGS resource, nearly 114 trillion cubic feet (Tcf) of technically-recoverable gas remains to be discovered from deep sedimentary basins. Worldwide estimates of deep gas are also high. The U.S. Geological Survey World Petroleum Assessment 2000 Project recently estimated a world mean undiscovered conventional gas resource outside the U.S. of 844 Tcf below 4.5 km (about 15,000 feet). Less is known about the origins of deep gas than about the origins of gas at shallower depths because fewer wells have been drilled into the deeper portions of many basins. Some of the many factors contributing to the origin of deep gas include the thermal stability of methane, the role of water and non-hydrocarbon gases in natural gas generation, porosity loss with increasing thermal maturity, the kinetics of deep gas generation, thermal cracking of oil to gas, and source rock potential based on thermal maturity and kerogen type. Recent experimental simulations

La modified TiO{sub 2} photoanode and its effect on DSSC performance: A comparative study of doping and surface treatment on deep and surface charge trapping

Energy Technology Data Exchange (ETDEWEB)

Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Ekanayake, Piyasiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Centre for Advanced Material and Energy Sciences (CAMES), Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Maroochydore DC, Queensland, 4558 (Australia); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

2016-04-01

The effect of Lanthanum ions (La{sup 3+}) on charge trapping in dye-sensitized solar cell (DSSC) photoanodes has been investigated with doped and surface-treated TiO{sub 2} nanoparticles. Doped nanoparticles consisting of 0.5 mol.% Mg and La co-doped TiO{sub 2}, 0.5 mol.% Mg doped TiO{sub 2} and pure TiO{sub 2} were synthesized by the sol gel method. Surface-treated nanoparticles of Mg doped TiO{sub 2} and pure TiO{sub 2} were prepared by ball milling in 0.05 M aqueous La{sup 3+} solution. All materials were analyzed by XRD, XPS and UV–Vis DRS. Cell performance, surface free energy state changes and electron injection efficiency of DSSCs based on these nanoparticles were evaluated using current –voltage measurements, EIS and Incident photon to current conversion efficiency. Doped materials had La and Mg ions incorporated into the TiO{sub 2} lattice, while no lattice changes were observed for the surface-treated materials. Less visible light was absorbed by treated oxides compared with doped oxide samples. The overall power conversion efficiencies (PCE) of DSSC photoanodes based on doped materials were twice those of photoanodes fabricated from treated nanoparticles. Doping establishes deep traps that reduce the recombination of electron–hole (e–h) pairs. Conversely, the presence of absorbed oxygen in treated materials enhances e–h recombination with electrolyte at surface trap sites. - Highlights: • DSSC performance is investigated using photoanodes of doped and La{sup 3+} surface treated TiO{sub 2}. • TiO{sub 2} and Mg–TiO{sub 2} treated with La{sup 3+} absorbed less visible light. • A high concentration of absorbed oxygen on surface treated oxides reduced band bending. • Increased surface free energy in the modified DSSC anodes is caused more by Mg{sup 2+} at Ti{sup 4+} than by La{sup 3+} at the surfaces. • Near surface charge traps due to La{sup 3+} treatment promotes e–h recombination.

Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy

International Nuclear Information System (INIS)

Li, A.Z.; Kim, H.K.; Jeong, J.C.; Wong, D.; Schlesinger, T.E.; Milnes, A.G.

1988-01-01

The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500--600 0 C for Si doping levels of 4--7 x 10 16 cm -3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 10 15 cm -3 down to 12 cm -3 ) and two and a half orders of magnitude for M6 by introducing 0.2--1 at.% In or Sb and increasing growth temperatures from 500 to 550 0 C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 0 C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (V/sub As/V/sub Ga/) complexes or (V/sub As/XV/sub Ga/) complexes where X is different for M3 and M6 and might be interstitial or impurity related

Deep Super Learner: A Deep Ensemble for Classification Problems

OpenAIRE

Young, Steven; Abdou, Tamer; Bener, Ayse

2018-01-01

Deep learning has become very popular for tasks such as predictive modeling and pattern recognition in handling big data. Deep learning is a powerful machine learning method that extracts lower level features and feeds them forward for the next layer to identify higher level features that improve performance. However, deep neural networks have drawbacks, which include many hyper-parameters and infinite architectures, opaqueness into results, and relatively slower convergence on smaller datase...

Induced dual EIT and EIA resonances with optical trapping phenomenon in near/far fields in the N-type four-level system

Science.gov (United States)

Osman, Kariman I.; Joshi, Amitabh

2017-01-01

The optical trapping phenomenon is investigated in the probe absorptive susceptibility spectra, during the interaction of four-level N-type atomic system with three transverse Gaussian fields, in a Doppler broadened medium. The system was studied under different temperature settings of 87Rb atomic vapor as well as different non-radiative decay rate. The system exhibits a combination of dual electromagnetically induced transparency with electromagnetically induced absorption (EIA) or transparency (EIT) resonances simultaneously in near/far field. Also, the optical trapping phenomenon is considerably affected by the non-radiative decay rate.

Macroscopic rate equation modeling of trapping/detrapping of hydrogen isotopes in tungsten materials

Energy Technology Data Exchange (ETDEWEB)

Hodille, E.A., E-mail: etienne.hodille@cea.fr [CEA, IRFM, F-13108 Saint Paul lez Durance (France); Bonnin, X. [LSPM-CNRS, Université Paris 13, Sorbonne Paris Cité, F-93430 Villetaneuse (France); Bisson, R.; Angot, T. [Aix-Marseille Université, PIIM, CNRS, UMR 7345, 13397 Marseille (France); Becquart, C.S. [Université Lille I, UMET, UMR 8207, 59655 Villeneuve d’Ascq cédex France (France); Layet, J.M. [Aix-Marseille Université, PIIM, CNRS, UMR 7345, 13397 Marseille (France); Grisolia, C. [CEA, IRFM, F-13108 Saint Paul lez Durance (France)

2015-12-15

Relevant parameters for trapping of Hydrogen Isotopes (HIs) in polycrystalline tungsten are determined with the MHIMS code (Migration of Hydrogen Isotopes in MaterialS) which is used to reproduce Thermal Desorption Spectrometry experiments. Three types of traps are found: two intrinsic traps (detrapping energy of 0.87 eV and 1.00 eV) and one extrinsic trap created by ion irradiation (detrapping energy of 1.50 eV). Then MHIMS is used to simulate HIs retention at different fluences and different implantation temperatures. Simulation results agree well with experimental data. It is shown that at 300 K the retention is limited by diffusion in the bulk. For implantation temperatures above 500 K, the retention is limited by trap creation processes. Above 600 K, the retention drops by two orders of magnitude as compared to the retention at 300 K. With the determined detrapping energies, HIs outgassing at room temperature is predicted. After ions implantation at 300 K, 45% of the initial retention is lost to vacuum in 300 000 s while during this time the remaining trapped HIs diffuse twice as deep into the bulk. - Highlights: • Code development to solve numerically the model equations of diffusion and trapping of hydrogen in metals. • Parametrization of the model trapping parameters (detrapping energies and density): fitting of experimental TDS spectrum. • Confrontation model/experiment: evolution of retention with fluence and implantation temperature. • Investigation of period of rest between implantation and TDS on retention and depth profile.

The Effects of Test Anxiety on Learning at Superficial and Deep Levels of Processing.

Science.gov (United States)

Weinstein, Claire E.; And Others

1982-01-01

Using a deep-level processing strategy, low test-anxious college students performed significantly better than high test-anxious students in learning a paired-associate word list. Using a superficial-level processing strategy resulted in no significant difference in performance. A cognitive-attentional theory and test anxiety mechanisms are…

SeaWiFS Deep Blue Aerosol Optical Thickness Monthly Level 3 Climatology Data Gridded at 0.5 Degrees V004

Data.gov (United States)

National Aeronautics and Space Administration — The SeaWiFS Deep Blue Level 3 Monthly Climatology Product contains monthly global climatology gridded (0.5 x 0.5 deg) data derived from SeaWiFS Deep Blue Level 3...

Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

Science.gov (United States)

Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

2018-04-01

Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

International Nuclear Information System (INIS)

Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

1982-01-01

A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

Science.gov (United States)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2017-03-01

Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

KAUST Repository

Salama, Amgad; El Amin, Mohamed F.; Sun, Shuyu

2015-01-01

One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since

Toward Rechargeable Persistent Luminescence for the First and Third Biological Windows via Persistent Energy Transfer and Electron Trap Redistribution.

Science.gov (United States)

Xu, Jian; Murata, Daisuke; Ueda, Jumpei; Viana, Bruno; Tanabe, Setsuhisa

2018-05-07

Persistent luminescence (PersL) imaging without real-time external excitation has been regarded as the next generation of autofluorescence-free optical imaging technology. However, to achieve improved imaging resolution and deep tissue penetration, developing new near-infrared (NIR) persistent phosphors with intense and long duration PersL over 1000 nm is still a challenging but urgent task in this field. Herein, making use of the persistent energy transfer process from Cr 3+ to Er 3+ , we report a novel garnet persistent phosphor of Y 3 Al 2 Ga 3 O 12 codoped with Er 3+ and Cr 3+ (YAG G:Er-Cr), which shows intense Cr 3+ PersL (∼690 nm) in the deep red region matching well with the first biological window (NIR-I, 650-950 nm) and Er 3+ PersL (∼1532 nm) in the NIR region matching well with the third biological window (NIR-III, 1500-1800 nm). The optical imaging through raw-pork tissues (thickness of 1 cm) suggests that the emission band of Er 3+ can achieve higher spatial resolution and more accurate signal location than that of Cr 3+ due to the reduced light scattering at longer wavelengths. Furthermore, by utilizing two independent electron traps with two different trap depths in YAG G:Er-Cr, the Cr 3+ /Er 3+ PersL can even be recharged in situ by photostimulation with 660 nm LED thanks to the redistribution of trapped electrons from the deep trap to the shallow one. Our results serve as a guide in developing promising NIR (>1000 nm) persistent phosphors for long-term optical imaging.

Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

International Nuclear Information System (INIS)

Lee, E.Y.; Brunett, B.A.; Olsen, R.W.; Van Scyoc, J.M. III; Hermon, H.; James, R.B.

1998-01-01

The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10 -16 cm 2 is detected and three hole traps having energies of 70 ± 20 meV, 105 ± 30 meV and 694 ± 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence

Laser trapping of 21Na atoms

International Nuclear Information System (INIS)

Lu, Zheng-Tian.

1994-09-01

This thesis describes an experiment in which about four thousand radioactive 21 Na (t l/2 = 22 sec) atoms were trapped in a magneto-optical trap with laser beams. Trapped 21 Na atoms can be used as a beta source in a precision measurement of the beta-asymmetry parameter of the decay of 21 Na → 21 Ne + Β + + v e , which is a promising way to search for an anomalous right-handed current coupling in charged weak interactions. Although the number o trapped atoms that we have achieved is still about two orders of magnitude lower than what is needed to conduct a measurement of the beta-asymmetry parameter at 1% of precision level, the result of this experiment proved the feasibility of trapping short-lived radioactive atoms. In this experiment, 21 Na atoms were produced by bombarding 24 Mg with protons of 25 MeV at the 88 in. Cyclotron of Lawrence Berkeley Laboratory. A few recently developed techniques of laser manipulation of neutral atoms were applied in this experiment. The 21 Na atoms emerging from a heated oven were first transversely cooled. As a result, the on-axis atomic beam intensity was increased by a factor of 16. The atoms in the beam were then slowed down from thermal speed by applying Zeeman-tuned slowing technique, and subsequently loaded into a magneto-optical trap at the end of the slowing path. The last two chapters of this thesis present two studies on the magneto-optical trap of sodium atoms. In particular, the mechanisms of magneto-optical traps at various laser frequencies and the collisional loss mechanisms of these traps were examined

Lead determination at ng/mL level by flame atomic absorption spectrometry using a tantalum coated slotted quartz tube atom trap.

Science.gov (United States)

Demirtaş, İlknur; Bakırdere, Sezgin; Ataman, O Yavuz

2015-06-01

Flame atomic absorption spectrometry (FAAS) still keeps its importance despite the relatively low sensitivity; because it is a simple and economical technique for determination of metals. In recent years, atom traps have been developed to increase the sensitivity of FAAS. Although the detection limit of FAAS is only at the level of µg/mL, with the use of atom traps it can reach to ng/mL. Slotted quartz tube (SQT) is one of the atom traps used to improve sensitivity. In atom trapping mode of SQT, analyte is trapped on-line in SQT for few minutes using ordinary sample aspiration, followed by the introduction of a small volume of organic solvent to effect the revolatilization and atomization of analyte species resulting in a transient signal. This system is economical, commercially available and easy to use. In this study, a sensitive analytical method was developed for the determination of lead with the help of SQT atom trapping flame atomization (SQT-AT-FAAS). 574 Fold sensitivity enhancement was obtained at a sample suction rate of 3.9 mL/min for 5.0 min trapping period with respect to FAAS. Organic solvent was selected as 40 µL of methyl isobutyl ketone (MIBK). To obtain a further sensitivity enhancement inner surface of SQT was coated with several transition metals. The best sensitivity enhancement, 1650 fold enhancement, was obtained by the Ta-coated SQT-AT-FAAS. In addition, chemical nature of Pb species trapped on quartz and Ta surface, and the chemical nature of Ta on quartz surface were investigated by X-ray photoelectron spectroscopy (XPS) and Raman Spectroscopy. Raman spectrometric results indicate that tantalum is coated on SQT surface in the form of Ta2O5. XPS studies revealed that the oxidation state of Pb in species trapped on both bare and Ta coated SQT surfaces is +2. For the accuracy check, the analyses of standard reference material were performed by use of SCP SCIENCE EnviroMAT Low (EU-L-2) and results for Pb were to be in good agreement with

Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

Science.gov (United States)

Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

2013-12-01

To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The �

Comparison of trap types and colors for capturing emerald ash borer adults at different population densities.

Science.gov (United States)

Poland, Therese M; Mccullough, Deborah G

2014-02-01

Results of numerous trials to evaluate artificial trap designs and lures for detection of Agrilus planipennis Fairmaire, the emerald ash borer, have yielded inconsistent results, possibly because of different A. planipennis population densities in the field sites. In 2010 and 2011, we compared 1) green canopy traps, 2) purple canopy traps, 3) green double-decker traps, and 4) purple double-decker traps in sites representing a range of A. planipennis infestation levels. Traps were baited with cis-3-hexenol in both years, plus an 80:20 mixture of Manuka and Phoebe oil (2010) or Manuka oil alone (2011). Condition of trees bearing canopy traps, A. planipennis infestation level of trees in the vicinity of traps, and number of A. planipennis captured per trap differed among sites in both years. Overall in both years, more females, males, and beetles of both sexes were captured on double-decker traps than canopy traps, and more beetles of both sexes (2010) or females (2011) were captured on purple traps than green traps. In 2010, detection rates were higher for purple (100%) and green double-decker traps (100%) than for purple (82%) or green canopy traps (64%) at sites with very low to low A. planipennis infestation levels. Captures of A. planipennis on canopy traps consistently increased with the infestation level of the canopy trap-bearing trees. Differences among trap types were most pronounced at sites with low A. planipennis densities, where more beetles were captured on purple double-decker traps than on green canopy traps in both years.

Understanding Democracy and Development Traps Using a Data-Driven Approach

Science.gov (United States)

Ranganathan, Shyam; Nicolis, Stamatios C.; Spaiser, Viktoria; Sumpter, David J.T.

2015-01-01

Abstract Methods from machine learning and data science are becoming increasingly important in the social sciences, providing powerful new ways of identifying statistical relationships in large data sets. However, these relationships do not necessarily offer an understanding of the processes underlying the data. To address this problem, we have developed a method for fitting nonlinear dynamical systems models to data related to social change. Here, we use this method to investigate how countries become trapped at low levels of socioeconomic development. We identify two types of traps. The first is a democracy trap, where countries with low levels of economic growth and/or citizen education fail to develop democracy. The second trap is in terms of cultural values, where countries with low levels of democracy and/or life expectancy fail to develop emancipative values. We show that many key developing countries, including India and Egypt, lie near the border of these development traps, and we investigate the time taken for these nations to transition toward higher democracy and socioeconomic well-being. PMID:26487983

Understanding Democracy and Development Traps Using a Data-Driven Approach.

Science.gov (United States)

Ranganathan, Shyam; Nicolis, Stamatios C; Spaiser, Viktoria; Sumpter, David J T

2015-03-01

Methods from machine learning and data science are becoming increasingly important in the social sciences, providing powerful new ways of identifying statistical relationships in large data sets. However, these relationships do not necessarily offer an understanding of the processes underlying the data. To address this problem, we have developed a method for fitting nonlinear dynamical systems models to data related to social change. Here, we use this method to investigate how countries become trapped at low levels of socioeconomic development. We identify two types of traps. The first is a democracy trap, where countries with low levels of economic growth and/or citizen education fail to develop democracy. The second trap is in terms of cultural values, where countries with low levels of democracy and/or life expectancy fail to develop emancipative values. We show that many key developing countries, including India and Egypt, lie near the border of these development traps, and we investigate the time taken for these nations to transition toward higher democracy and socioeconomic well-being.

Shrew trap efficiency

DEFF Research Database (Denmark)

Gambalemoke, Mbalitini; Mukinzi, Itoka; Amundala, Drazo

2008-01-01

We investigated the efficiency of four trap types (pitfall, Sherman LFA, Victor snap and Museum Special snap traps) to capture shrews. This experiment was conducted in five inter-riverine forest blocks in the region of Kisangani. The total trapping effort was 6,300, 9,240, 5,280 and 5,460 trap......, our results indicate that pitfall traps are the most efficient for capturing shrews: not only do they have a higher efficiency (yield), but the taxonomic diversity of shrews is also higher when pitfall traps are used....

Seismic trapped modes in the oroville and san andreas fault zones.

Science.gov (United States)

Li, Y G; Leary, P; Aki, K; Malin, P

1990-08-17

Three-component borehole seismic profiling of the recently active Oroville, California, normal fault and microearthquake event recording with a near-fault three-component borehole seismometer on the San Andreas fault at Parkfield, California, have shown numerous instances of pronounced dispersive wave trains following the shear wave arrivals. These wave trains are interpreted as fault zone-trapped seismic modes. Parkfield earthquakes exciting trapped modes have been located as deep as 10 kilometers, as shallow as 4 kilometers, and extend 12 kilometers along the fault on either side of the recording station. Selected Oroville and Parkfield wave forms are modeled as the fundamental and first higher trapped SH modes of a narrow low-velocity layer at the fault. Modeling results suggest that the Oroville fault zone is 18 meters wide at depth and has a shear wave velocity of 1 kilometer per second, whereas at Parkfield, the fault gouge is 100 to 150 meters wide and has a shear wave velocity of 1.1 to 1.8 kilometers per second. These low-velocity layers are probably the rupture planes on which earthquakes occur.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

Energy Technology Data Exchange (ETDEWEB)

Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

2016-03-14

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

International Nuclear Information System (INIS)

Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

2016-01-01

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Two photon spectroscopy of rubidium atoms in a magneto-optic trap

International Nuclear Information System (INIS)

Fretel, E.

1997-01-01

Two photon transitions without doppler effect can be used as an atomic reference. The aim of this work is to study two photon transitions of rubidium atoms in a magneto-optical trap. The chosen transition is from the level 5 2 S 1/2 toward the level 5 2 D 5/2 . The magneto-optical trap is achieved by using 3 pairs of perpendicular laser beams and by setting a magnetic field gradient. About 10 18 atoms are trapped and cooled in a 1 mm 3 volume. In a first stage we have realized an optical double resonance experiment from the level 5 2 S 1/2 toward the level 5 2 D 5/2 by populating the intermediate level 5 2 P 3/2 . Then we have studied the two photon transition in this cluster of cold atoms. A particular setting of the experiment allows to reduce the effect of ray broadening and shifting due to the magnetic field of the trap

Continuous loading of cold atoms into a Ioffe-Pritchard magnetic trap

International Nuclear Information System (INIS)

Schmidt, Piet O; Hensler, Sven; Werner, Joerg; Binhammer, Thomas; Goerlitz, Axel; Pfau, Tilman

2003-01-01

We present a robust continuous optical loading scheme for a Ioffe-Pritchard (IP) type magnetic trap (MT). Chromium atoms are cooled and trapped in a modified magneto-optical trap (MOT) consisting of a conventional 2D-MOT in the radial direction and an axial molasses. The MOT and IP trap share the same magnetic field configuration. Continuous loading of atoms into the IP trap is provided by radiative leakage from the MOT to a metastable level which is magnetically trapped and decoupled from the MOT light. We are able to accumulate 30 times more atoms in the MT than in the MOT. The absolute number of 2 x 10 8 atoms is limited by inelastic collisions. A model based on rate equations shows good agreement with the data. Our scheme can also be applied to other atoms with similar level structure like alkaline earth metals

Variation of interface trap level charge density within the bandgap of ...

Indian Academy of Sciences (India)

Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), ... Experimental details of the sample preparation, fabrication .... gives the true evidence of interface trap density at the interface of SiO2/SiC. On the ...

AlxGa1--xN/GaN band offsets determined by deep-level emission

International Nuclear Information System (INIS)

Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

2001-01-01

We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

Science.gov (United States)

Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

1999-11-01

In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.; Thon, S. M.; Ip, A. H.; Sargent, E. H.

2013-01-01

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.

2013-03-21

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers\\' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Magnetic traps with a sperical separatrix: Tornado traps

International Nuclear Information System (INIS)

Peregood, B.P.; Lehnert, B.

1979-11-01

A review is given on the features of magnetic traps with a spherical separatrix, with special emphesis on Tornado spiral coil configurations. The confinement and heating of static plasmas in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In additio, the mode of rotating plasma operation by crossed electric and magnetic fields is being described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps for the creation and containment of hot plasmas. (author)

Magnetic traps with a spherical separatrix: Tornado traps

International Nuclear Information System (INIS)

Peregood, B.P.; Lehnert, B.

1981-01-01

A review is given on the features of magnetic traps with a spherical separatrix, with special emphasis on Tornado spiral coil configurations. The confinement and heating of static plasms in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In addition, the mode of rotating plasma operation by crossed electric and magnetic fields is described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps in the creation and containment of hot plasmas. (orig.)

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

International Nuclear Information System (INIS)

Alfieri, G.; Kimoto, T.

2013-01-01

We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH 6 and EH 7 levels, which are known to constitute EH 6/7 , a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH 6 and EH 7 shows that EH 7 is dominant over EH 6 and confirms that their nature is related to a carbon vacancy.

Is there a 'Mid-Rank Trap' for Universities'

OpenAIRE

Chang Da Wan

2015-01-01

The middle-income trap is an economic phenomenon to describe economies that have stagnated at the middle-income level and failed to progress into the high-income level. Inspired by this economic concept, this paper explores a hypothesis: is there a 'mid-rank trap' for universities in the exercise to rank universities globally' Using the rankings between 2004 and 2014 that were jointly and separately developed by Times Higher Education and Quacquarelli Symonds Company, this paper argues that t...

Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

International Nuclear Information System (INIS)

Arnaboldi, Claudio; Fascilla, Andrea; Lund, M.W.; Pessina, Gianluigi

2004-01-01

We have selected different low noise JFET processes that have shown outstanding dynamic and noise performance at both room temperature and low temperatures. We have studied JFETs made with a process optimized for cryogenic operation, testing several devices of varying capacitance. For most of them, we have been able to detect the presence of shallow individual traps at low temperature which create low frequency (LF) Generation-Recombination (G-R) noise. For one device type no evidence of traps has been observed at the optimum temperature of operation (around 100 K). It had a very small residual LF noise. This device has been cooled down to 14 K. From below 100 K down to 14 K the noise was observed to increase due to G-R noise originating from donor atoms (dopants) inside the channel. A very simple theoretical interpretation confirms the nature of G-R noise from these very shallow trapping centers. We also studied devices from a process optimized for room temperature operation and found noise corresponding to the presence of a single deep level trap. Even for this circumstance the theory was experimentally confirmed. The measurement approach we used allowed us to achieve a very high accuracy in the modeling of the measured G-R noise. The ratio of the density of the atoms responsible for G-R noise above the doping concentration, N T /N d , has been verified with a sensitivity around 10 -7

Trap and recombination sites of biotite mineral estimated by thermoluminescence analysis

International Nuclear Information System (INIS)

Kalita, J.M.; Wary, G.

2016-01-01

With the help of thermoluminescence (TL) analysis possible trap and recombination levels of natural biotite mineral have been estimated. Differential Scanning Calorimetric (DSC) analysis reveals that within 300–773 K there is no phase change of this mineral. However within this temperature range, some significant changes in trapping sites have been observed. For un-annealed sample one trap and one recombination center has been observed at depth around 1.01 and 3.57 eV respectively. However due to annealing at 473 and 573 K, initially present trap level has been found to shift towards the conduction band and produced a new shallow trap at depth around 0.78 eV. Further annealing at 673 K (or above) a new trap level is found to generate at the previously present site (at depth ~1.01 eV). But during the annealing treatments no significant change in recombination center is observed. Based on the analysis, a schematic band structure of biotite crystal has been proposed showing all possible trap and recombination centers. With reference to the band diagram the whole TL process in biotite have been discussed. - Highlights: • TL of biotite mineral annealed at four different temperatures was studied. • DSC result showed no change in phase of the sample within 300–773 K. • A significant change in trap state with annealing treatment was observed. • Schematic band structure of biotite crystal has been proposed.

50 CFR 697.19 - Trap limits and trap tag requirements for vessels fishing with lobster traps.

Science.gov (United States)

2010-10-01

... vessels fishing with lobster traps. 697.19 Section 697.19 Wildlife and Fisheries FISHERY CONSERVATION AND... requirements for vessels fishing with lobster traps. (a) Trap limits for vessels fishing or authorized to fish... management area designation certificate or valid limited access American lobster permit specifying one or...

TECHNICAL AND ECONOMIC EVALUATION OF OPTIMAL VOLTAGE LEVEL FOR THE POWER SUPPLY OF DEEP MINE OPERATING HORIZONS

OpenAIRE

Shkrabets, F. P.; Ostapchuk, O. V.; Kozhevnikov, A. V.; Akulov, A. V.

2015-01-01

The most perspective option for possible deep mine power supply is the one with the deep input of 35 kV voltage by installing of underground 35kV/6 kV substation. This option is caused by the expected level of electrical loads, provided by mine development, the power consumers’ deep layout (considering the distance from the source to the shaft on the surface and from the shaft to the underground substation chamber) and primary and the most responsible power consumers (blind shaft lifting devi...

Traps in Zirconium Alloys Oxide Layers

Directory of Open Access Journals (Sweden)

Helmar Frank

2005-01-01

Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

Electron scattering by trapped fermionic atoms

International Nuclear Information System (INIS)

Wang Haijun; Jhe, Wonho

2002-01-01

Considering the Fermi gases of alkali-metal atoms that are trapped in a harmonic potential, we study theoretically the elastic and inelastic scattering of the electrons by the trapped Fermi atoms and present the corresponding differential cross sections. We also obtain the stopping power for the cases that the electronic state as well as the center-of-mass state are excited both separately and simultaneously. It is shown that the elastic scattering process is no longer coherent in contrast to the electron scattering by the atomic Bose-Einstein condensate (BEC). For the inelastic scattering process, on the other hand, the differential cross section is found to be proportional to the 2/3 power of the number of the trapped atoms. In particular, the trapped fermionic atoms display the effect of ''Fermi surface,'' that is, only the energy levels near the Fermi energy have dominant contributions to the scattering process. Moreover, it is found that the stopping power scales as the 7/6 power of the atomic number. These results are fundamentally different from those of the electron scattering by the atomic BEC, mainly due to the different statistics obeyed by the trapped atomic systems

Dual deep modeling: multi-level modeling with dual potencies and its formalization in F-Logic.

Science.gov (United States)

Neumayr, Bernd; Schuetz, Christoph G; Jeusfeld, Manfred A; Schrefl, Michael

2018-01-01

An enterprise database contains a global, integrated, and consistent representation of a company's data. Multi-level modeling facilitates the definition and maintenance of such an integrated conceptual data model in a dynamic environment of changing data requirements of diverse applications. Multi-level models transcend the traditional separation of class and object with clabjects as the central modeling primitive, which allows for a more flexible and natural representation of many real-world use cases. In deep instantiation, the number of instantiation levels of a clabject or property is indicated by a single potency. Dual deep modeling (DDM) differentiates between source potency and target potency of a property or association and supports the flexible instantiation and refinement of the property by statements connecting clabjects at different modeling levels. DDM comes with multiple generalization of clabjects, subsetting/specialization of properties, and multi-level cardinality constraints. Examples are presented using a UML-style notation for DDM together with UML class and object diagrams for the representation of two-level user views derived from the multi-level model. Syntax and semantics of DDM are formalized and implemented in F-Logic, supporting the modeler with integrity checks and rich query facilities.

Cryogenic surface ion traps

International Nuclear Information System (INIS)

Niedermayr, M.

2015-01-01

Microfabricated surface traps are a promising architecture to realize a scalable quantum computer based on trapped ions. In principle, hundreds or thousands of surface traps can be located on a single substrate in order to provide large arrays of interacting ions. To this end, trap designs and fabrication methods are required that provide scalable, stable and reproducible ion traps. This work presents a novel surface-trap design developed for cryogenic applications. Intrinsic silicon is used as the substrate material of the traps. The well-developed microfabrication and structuring methods of silicon are utilized to create simple and reproducible traps. The traps were tested and characterized in a cryogenic setup. Ions could be trapped and their life time and motional heating were investigated. Long ion lifetimes of several hours were observed and the measured heating rates were reproducibly low at around 1 phonon per second at a trap frequency of 1 MHz. (author) [de

Artificial covering on trap nests improves the colonization of trap-nesting wasps

OpenAIRE

Taki, Hisatomo; Kevan, Peter G.; Viana, Blandina Felipe; Silva, Fabiana O.; Buck, Matthias

2008-01-01

Acesso restrito: Texto completo. p. 225-229 To evaluate the role that a trap-nest cover might have on sampling methodologies, the abundance of each species of trap-nesting Hymenoptera and the parasitism rate in a Canadian forest were compared between artificially covered and uncovered traps. Of trap tubes exposed at eight forest sites in six trap-nest boxes, 531 trap tubes were occupied and 1216 individuals of 12 wasp species of four predatory families, Vespidae (Eumeninae), Crabronidae...

Discriminating between antihydrogen and mirror-trapped antiprotons in a minimum-B trap

CERN Document Server

Amole, C; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Kurchaninov, L; Jonsell, S; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Robicheaux, F; Sarid, E; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S

2012-01-01

Recently, antihydrogen atoms were trapped at CERN in a magnetic minimum (minimum-B) trap formed by superconducting octupole and mirror magnet coils. The trapped antiatoms were detected by rapidly turning off these magnets, thereby eliminating the magnetic minimum and releasing any antiatoms contained in the trap. Once released, these antiatoms quickly hit the trap wall, whereupon the positrons and antiprotons in the antiatoms annihilated. The antiproton annihilations produce easily detected signals; we used these signals to prove that we trapped antihydrogen. However, our technique could be confounded by mirror-trapped antiprotons, which would produce seemingly-identical annihilation signals upon hitting the trap wall. In this paper, we discuss possible sources of mirror-trapped antiprotons and show that antihydrogen and antiprotons can be readily distinguished, often with the aid of applied electric fields, by analyzing the annihilation locations and times. We further discuss the general properties of antipr...

Stable Trapping of Multielectron Helium Bubbles in a Paul Trap

Science.gov (United States)

Joseph, E. M.; Vadakkumbatt, V.; Pal, A.; Ghosh, A.

2017-06-01

In a recent experiment, we have used a linear Paul trap to store and study multielectron bubbles (MEBs) in liquid helium. MEBs have a charge-to-mass ratio (between 10^{-4} and 10^{-2} C/kg) which is several orders of magnitude smaller than ions (between 10^6 and 10^8 C/kg) studied in traditional ion traps. In addition, MEBs experience significant drag force while moving through the liquid. As a result, the experimental parameters for stable trapping of MEBs, such as magnitude and frequency of the applied electric fields, are very different from those used in typical ion trap experiments. The purpose of this paper is to model the motion of MEBs inside a linear Paul trap in liquid helium, determine the range of working parameters of the trap, and compare the results with experiments.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

Science.gov (United States)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Is there a 'Mid-Rank Trap' for Universities'

Directory of Open Access Journals (Sweden)

Chang Da Wan

2015-10-01

Full Text Available The middle-income trap is an economic phenomenon to describe economies that have stagnated at the middle-income level and failed to progress into the high-income level. Inspired by this economic concept, this paper explores a hypothesis: is there a 'mid-rank trap' for universities in the exercise to rank universities globally' Using the rankings between 2004 and 2014 that were jointly and separately developed by Times Higher Education and Quacquarelli Symonds Company, this paper argues that there is indeed a phenomenon, which I term as 'mid-rank trap' whereby universities remain stagnant for a decade in a similar band of the rankings. Having established the hypothesis for universities, the paper examines policies and interventions that have been successfully carried out to elevate economies away from the middle-income trap, and importantly, to draw out the underlying principles of these economic policies and interventions that can be incorporated into policymaking and strategic planning for universities using the Malaysian higher education system as a case study.

Hot-carrier effects on irradiated deep submicron NMOSFET

International Nuclear Information System (INIS)

Cui Jiangwei; Zheng Qiwen; Yu Xuefeng; Cong Zhongchao; Zhou Hang; Guo Qi; Wen Lin; Wei Ying; Ren Diyuan

2014-01-01

We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress. (semiconductor devices)

Simulation of I-V and C-V curves of metal/GaN/AlGaN/GaN heterostructures with trap-assisted tunnelling

International Nuclear Information System (INIS)

Racko, J.; Benko, P.; Grmanova, A.; Harmatha, L.; Breza, J.; Granzner, R.; Schwierz, F.

2013-01-01

The described trap-assisted tunnelling (TAT) model of the metal/GaN/Al_xGaN_1_-_x/GaN structure allows analyzing the effect of deep traps upon I-V and C-V characteristics. The negative charge with magnitude proportional to the molar concentration of aluminium gives rise to a barrier at the first heterojunction, which is higher than the Schottky barrier at the metal/GaN interface. On increasing the reverse bias Va the barrier at the first heterojunction is getting lower. The drop of this barrier causes an exponential increase of the reverse current. The current saturates, when the first heterojunction barrier is lower than the Schottky barrier. The effect of TAT can be observed also on varying the parameters of the band of traps. The shape of the simulated C-V curve is affected by changes in the charge on the second heterojunction. In principle it reflects the decrease of electron concentration in the quantum well on increasing the reverse bias V_a. The space charge region becomes wider and the electron concentration at the second heterojunction falls below the concentration of ionized deep trapping centres, which manifests itself as a noticeable drop in the capacitance of the metal/GaN/Al_xGaN_1_-_x/GaN structure. (authors)

Decontamination by replacing soil and soil cover with deep-level soil in flower beds and vacant places in Northern Fukushima Prefecture

International Nuclear Information System (INIS)

Sugiura, Hiroyuki; Kawano, Keisuke; Kayama, Yukihiko; Koube, Nobuyuki

2012-01-01

Radioactivity decontamination by replacing soil and soil cover with deep-level soil and soil cover in flower beds and a vacant place in Northern Fukushima Prefecture were studied, which experienced radioactive contamination due to the accident at the TEPCO's Fukushima Daiichi Nuclear Power Plant. Radioactivity counting rate 1 cm above the soil surface after replacing surface soil with uncontaminated deep-level soil decreased to 13.7% of the control in gardens. The concentration of radioactive cesium in the cover soil increased after 132 days; however, it decreased in the old surface soil under the cover soil in flower beds. A 10 cm deep-level soil cover placed by heavy machinery decreased the radiation dose rate to 70.8% of the control and radioactivity counting rate to 24.6% in the vacant place. Replacing the radioactively contaminated surface soil and soil cover with a deep-level soil was a reasonable decontamination method for the garden and vacant place because it is quick, cost effective and labour efficient. (author)

Influence of modulation method on using LC-traps with single-phase voltage source converters

DEFF Research Database (Denmark)

Wang, Xiongfei; Min, Huang; Bai, Haofeng

2015-01-01

The switching-frequency LC-trap filter has recently been employed with high-order passive filters for Voltage Source Inverters (VSIs). This paper investigates the influence of modulation method on using the LC-traps with single-phase VSIs. Two-level (bipolar) and three-level (unipolar) modulations...... that include phase distortion and alternative phase opposition distortion methods are analyzed. Harmonic filtering performances of four LC-trap-based filters with different locations of LC-traps are compared. It is shown that the use of parallel-LC-traps in series with filter inductors, either grid...... or converter side, has a worse harmonic filtering performance than using series-LC-trap in the shunt branch. Simulations and experimental results are presented for verifications....

Physisorption of an electron in deep surface potentials off a dielectric surface

International Nuclear Information System (INIS)

Heinisch, R. L.; Bronold, F. X.; Fehske, H.

2011-01-01

We study phonon-mediated adsorption and desorption of an electron at dielectric surfaces with deep polarization-induced surface potentials where multiphonon transitions are responsible for electron energy relaxation. Focusing on multiphonon processes due to the nonlinearity of the coupling between the external electron and the acoustic bulk phonon triggering the transitions between surface states, we calculate electron desorption times for graphite, MgO, CaO, Al 2 O 3 , and SiO 2 and electron sticking coefficients for Al 2 O 3 , CaO, and SiO 2 . To reveal the kinetic stages of electron physisorption, we moreover study the time evolution of the image-state occupancy and the energy-resolved desorption flux. Depending on the potential depth and the surface temperature, we identify two generic scenarios: (i) adsorption via trapping in shallow image states followed by relaxation to the lowest image state and desorption from that state via a cascade through the second strongly bound image state in not too deep potentials, and (ii) adsorption via trapping in shallow image states but followed by a relaxation bottleneck retarding the transition to the lowest image state and desorption from that state via a one-step process to the continuum in deep potentials.

Quantum information processing with trapped ions

International Nuclear Information System (INIS)

Haeffner, H.; Haensel, W.; Rapol, U.; Koerber, T.; Benhelm, J.; Riebe, M.; Chek-al-Kar, D.; Schmidt-Kaler, F.; Becher, C.; Roos, C.; Blatt, R.

2005-01-01

Single Ca + ions and crystals of Ca + ions are confined in a linear Paul trap and are investigated for quantum information processing. Here we report on recent experimental advancements towards a quantum computer with such a system. Laser-cooled trapped ions are ideally suited systems for the investigation and implementation of quantum information processing as one can gain almost complete control over their internal and external degrees of freedom. The combination of a Paul type ion trap with laser cooling leads to unique properties of trapped cold ions, such as control of the motional state down to the zero-point of the trapping potential, a high degree of isolation from the environment and thus a very long time available for manipulations and interactions at the quantum level. The very same properties make single trapped atoms and ions well suited for storing quantum information in long lived internal states, e.g. by encoding a quantum bit (qubit) of information within the coherent superposition of the S 1/2 ground state and the metastable D 5/2 excited state of Ca + . Recently we have achieved the implementation of simple algorithms with up to 3 qubits on an ion-trap quantum computer. We will report on methods to implement single qubit rotations, the realization of a two-qubit universal quantum gate (Cirac-Zoller CNOT-gate), the deterministic generation of multi-particle entangled states (GHZ- and W-states), their full tomographic reconstruction, the realization of deterministic quantum teleportation, its quantum process tomography and the encoding of quantum information in decoherence-free subspaces with coherence times exceeding 20 seconds. (author)

Nematode-Trapping Fungi.

Science.gov (United States)

Jiang, Xiangzhi; Xiang, Meichun; Liu, Xingzhong

2017-01-01

Nematode-trapping fungi are a unique and intriguing group of carnivorous microorganisms that can trap and digest nematodes by means of specialized trapping structures. They can develop diverse trapping devices, such as adhesive hyphae, adhesive knobs, adhesive networks, constricting rings, and nonconstricting rings. Nematode-trapping fungi have been found in all regions of the world, from the tropics to Antarctica, from terrestrial to aquatic ecosystems. They play an important ecological role in regulating nematode dynamics in soil. Molecular phylogenetic studies have shown that the majority of nematode-trapping fungi belong to a monophyletic group in the order Orbiliales (Ascomycota). Nematode-trapping fungi serve as an excellent model system for understanding fungal evolution and interaction between fungi and nematodes. With the development of molecular techniques and genome sequencing, their evolutionary origins and divergence, and the mechanisms underlying fungus-nematode interactions have been well studied. In recent decades, an increasing concern about the environmental hazards of using chemical nematicides has led to the application of these biological control agents as a rapidly developing component of crop protection.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

International Nuclear Information System (INIS)

Jiang Zhi; Zhuang Yi-Qi; Li Cong; Wang Ping; Liu Yu-Qi

2016-01-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D it ) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. (paper)

Characteristics of trapped electrons and electron traps in single crystals

International Nuclear Information System (INIS)

Budzinski, E.E.; Potter, W.R.; Potienko, G.; Box, H.C.

1979-01-01

Two additional carbohydrates are reported whose crystal structures trap electrons intermolecularly in single crystals x irradiated at low temperature, namely sucrose and rhamnose. Five carbohydrate and polyhydroxy compounds are now known which exhibit this phenomenon. The following characteristics of the phenomenon were investigated: (1) the hyperfine couplings of the electron with protons of the polarized hydroxy groups forming the trap; (2) the distances between these protons and the trapped electron; (3) the spin density of the electron at the protons and (4) the relative stabilities of the electron trapped in various crystal structures

Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

International Nuclear Information System (INIS)

Scharager, C.; Muller, J.C.; Stuck, R.; Siffert, P.

1975-01-01

Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 10 7 ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated [fr

Analog quantum simulation of generalized Dicke models in trapped ions

Science.gov (United States)

Aedo, Ibai; Lamata, Lucas

2018-04-01

We propose the analog quantum simulation of generalized Dicke models in trapped ions. By combining bicromatic laser interactions on multiple ions we can generate all regimes of light-matter coupling in these models, where here the light mode is mimicked by a motional mode. We present numerical simulations of the three-qubit Dicke model both in the weak field (WF) regime, where the Jaynes-Cummings behavior arises, and the ultrastrong coupling (USC) regime, where a rotating-wave approximation cannot be considered. We also simulate the two-qubit biased Dicke model in the WF and USC regimes and the two-qubit anisotropic Dicke model in the USC regime and the deep-strong coupling regime. The agreement between the mathematical models and the ion system convinces us that these quantum simulations can be implemented in the laboratory with current or near-future technology. This formalism establishes an avenue for the quantum simulation of many-spin Dicke models in trapped ions.

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

International Nuclear Information System (INIS)

Li, Baikui; Tang, Xi; Chen, Kevin J.

2015-01-01

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

Trapping of a microsphere pendulum resonator in an optical potential

International Nuclear Information System (INIS)

Ward, J. M.; Wu, Y.; Nic Chormaic, S.; Minogin, V. G.

2009-01-01

We propose a method to spatially confine or corral the movements of a micropendulum via the optical forces produced by two simultaneously excited optical modes of a photonic molecule comprising two microspherical cavities. We discuss how the cavity-enhanced optical force generated in the photonic molecule can create an optomechanical potential of about 10 eV deep and 30 pm wide, which can be used to trap the pendulum at any given equilibrium position by a simple choice of laser frequencies. This result presents opportunities for very precise all-optical self-alignment of microsystems.

Multi-level gene/MiRNA feature selection using deep belief nets and active learning.

Science.gov (United States)

Ibrahim, Rania; Yousri, Noha A; Ismail, Mohamed A; El-Makky, Nagwa M

2014-01-01

Selecting the most discriminative genes/miRNAs has been raised as an important task in bioinformatics to enhance disease classifiers and to mitigate the dimensionality curse problem. Original feature selection methods choose genes/miRNAs based on their individual features regardless of how they perform together. Considering group features instead of individual ones provides a better view for selecting the most informative genes/miRNAs. Recently, deep learning has proven its ability in representing the data in multiple levels of abstraction, allowing for better discrimination between different classes. However, the idea of using deep learning for feature selection is not widely used in the bioinformatics field yet. In this paper, a novel multi-level feature selection approach named MLFS is proposed for selecting genes/miRNAs based on expression profiles. The approach is based on both deep and active learning. Moreover, an extension to use the technique for miRNAs is presented by considering the biological relation between miRNAs and genes. Experimental results show that the approach was able to outperform classical feature selection methods in hepatocellular carcinoma (HCC) by 9%, lung cancer by 6% and breast cancer by around 10% in F1-measure. Results also show the enhancement in F1-measure of our approach over recently related work in [1] and [2].

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

Science.gov (United States)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

Photoionization and cold collision studies using trapped atoms

International Nuclear Information System (INIS)

Gould, P.L.

1996-01-01

The authors have used laser cooling and trapping techniques to investigate photoionization and cold collisions. With laser-trapped Rb, they have measured the photoionization cross section from the first excited (5P) level by observing the photoionization-induced loss rate of neutral atoms from the trap. This technique has the advantage that it directly measures the photoionization rate per atom. Knowing the ionizing laser intensity and the excited-state fraction, the measured loss rate gives the absolute cross section. Using this technique, the Rb 5P photoionization cross section at ∼400 nm has been determined with an uncertainty of 9%. The authors are currently attempting to extend this method to the 5D level. Using time-ordered pulses of diode-laser light (similar to the STIRAP technique), they have performed very efficient two-photon excitation of trapped Rb atoms to 5D. Finally, they will present results from a recent collaboration which combines measurements form conventional molecular spectroscopy (single photon and double resonance) with photoassociation collisions of ultracold Na atoms to yield a precise (≤1 ppm) value for the dissociation energy of the X Σ g+ ground state of the Na 2 molecule

The biomass of the deep-sea benthopelagic plankton

Science.gov (United States)

Wishner, K. F.

1980-04-01

Deep-sea benthopelagic plankton samples were collected with a specially designed opening-closing net system 10 to 100 m above the bottom in five different oceanic regions at depths from 1000 to 4700 m. Benthopelagic plankton biomasses decrease exponentially with depth. At 1000 m the biomass is about 1% that of the surface zooplankton, at 5000 m about 0.1%. Effects of differences in surface primary productivity on deep-sea plankton biomass are much less than the effect of depth and are detectable only in a few comparisons of extreme oceanic regions. The biomass at 10 m above the bottom is greater than that at 100 m above the bottom (in a three-sample comparison), which could be a consequence of an enriched near-bottom environment. The deep-sea plankton biomass in the Red Sea is anomalously low. This may be due to increased decomposition rates in the warm (22°C) deep Red Sea water, which prevent much detritus from reaching the deep sea. A model of organic carbon utilization in the benthic boundary layer (bottom 100 m), incorporating results from deep-sea sediment trap and respiration studies, indicates that the benthopelagic plankton use only a small amount of the organic carbon flux. A large fraction of the flux is unaccounted for by present estimates of benthic and benthopelagic respiration.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

Science.gov (United States)

Pang, Bo; Becker, Frank

2017-04-28

Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Role of time series sediment traps in understanding the Indian summer monsoon

Digital Repository Service at National Institute of Oceanography (India)

Guptha, M.V.S.

particles or sediment or larger accumulations called marine snow – which are comprised of organic matter, dead organisms, tiny shells, dust particles, minerals etc. These sediment traps are capable of collecting settling particles hourly to yearly time... were demonstrated by Honjo (1982) and Deuser et al. (1983). Analysis of the samples helps in understanding how fast various particulate matter, nutrients etc move from the ocean surface to the deep ocean. Because, these materials are largely used...

Trapping, self-trapping and the polaron family

International Nuclear Information System (INIS)

Stoneham, A M; Gavartin, J; Shluger, A L; Kimmel, A V; Ramo, D Munoz; Roennow, H M; Aeppli, G; Renner, C

2007-01-01

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO 2 , this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy (STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail

Activated aging dynamics and effective trap model description in the random energy model

Science.gov (United States)

Baity-Jesi, M.; Biroli, G.; Cammarota, C.

2018-01-01

We study the out-of-equilibrium aging dynamics of the random energy model (REM) ruled by a single spin-flip Metropolis dynamics. We focus on the dynamical evolution taking place on time-scales diverging with the system size. Our aim is to show to what extent the activated dynamics displayed by the REM can be described in terms of an effective trap model. We identify two time regimes: the first one corresponds to the process of escaping from a basin in the energy landscape and to the subsequent exploration of high energy configurations, whereas the second one corresponds to the evolution from a deep basin to the other. By combining numerical simulations with analytical arguments we show why the trap model description does not hold in the former but becomes exact in the second.

Formation of Deep Electron Trap by Yb3+ Codoping Leads into Super-Long Persistent Luminescence in Ce3+-doped Yttrium Aluminum Gallium Garnet Phosphors.

Science.gov (United States)

Ueda, Jumpei; Miyano, Shun; Tanabe, Setsuhisa

2018-05-23

The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Cr 3+ compound is one of the brightest persistent phosphors, but its persistent luminescence (PersL) duration is not so long due to the relatively shallow Cr 3+ electron trap. Comparing the vacuum referred binding energy of the electron trapping state by Cr 3+ and those by lanthanide ions, we selected Yb 3+ as a deeper electron trapping center. The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Yb 3+ phosphors show Ce 3+ :5d→4f green persistent luminescence after ceasing blue light excitation. The formation of Yb 2+ was confirmed by the increased intensity of absorption at 585 nm during the charging process. This result indicates that the Yb 3+ ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found the Yb 3+ trap makes much deeper electron trap with 1.01 eV depth than the Cr 3+ electron trap with 0.81 eV depth. This deeper Yb 3+ trap provides much slower detrapping rate of filled electron traps than the Cr 3+ -codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce 3+ and Yb 3+ concentrations, the Y 3 Al 2 Ga 3 O 12 :Ce 3+ (0.2%)-Yb 3+ (0.1%) as-made transparent ceramic phosphor showed super long persistent luminescence for over 138.8 hours after ceasing blue light charging.

Towards testing quantum physics in deep space

Science.gov (United States)

Kaltenbaek, Rainer

2016-07-01

MAQRO is a proposal for a medium-sized space mission to use the unique environment of deep space in combination with novel developments in space technology and quantum technology to test the foundations of physics. The goal is to perform matter-wave interferometry with dielectric particles of up to 10^{11} atomic mass units and testing for deviations from the predictions of quantum theory. Novel techniques from quantum optomechanics with optically trapped particles are to be used for preparing the test particles for these experiments. The core elements of the instrument are placed outside the spacecraft and insulated from the hot spacecraft via multiple thermal shields allowing to achieve cryogenic temperatures via passive cooling and ultra-high vacuum levels by venting to deep space. In combination with low force-noise microthrusters and inertial sensors, this allows realizing an environment well suited for long coherence times of macroscopic quantum superpositions and long integration times. Since the original proposal in 2010, significant progress has been made in terms of technology development and in refining the instrument design. Based on these new developments, we submitted/will submit updated versions of the MAQRO proposal in 2015 and 2016 in response to Cosmic-Vision calls of ESA for a medium-sized mission. A central goal has been to address and overcome potentially critical issues regarding the readiness of core technologies and to provide realistic concepts for further technology development. We present the progress on the road towards realizing this ground-breaking mission harnessing deep space in novel ways for testing the foundations of physics, a technology pathfinder for macroscopic quantum technology and quantum optomechanics in space.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

Trapping radioactive ions

CERN Document Server

Kluge, Heinz-Jürgen

2004-01-01

Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning.

Trapping radioactive ions

International Nuclear Information System (INIS)

Kluge, H.-J.; Blaum, K.

2004-01-01

Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning

Persistent and energetic bottom-trapped topographic Rossby waves observed in the southern South China Sea

Science.gov (United States)

Shu, Yeqiang; Xue, Huijie; Wang, Dongxiao; Chai, Fei; Xie, Qiang; Cai, Shuqun; Chen, Rongyu; Chen, Ju; Li, Jian; He, Yunkai

2016-01-01

Energetic fluctuations with periods of 9–14 days below a depth of 1400 m were observed in the southern South China Sea (SCS) from 5 years of direct measurements. We interpreted such fluctuations as topographic Rossby waves (TRWs) because they obey the dispersion relation. The TRWs persisted from May 24, 2009 to August 23, 2013, and their bottom current speed with a maximum of ~10 cm/s was one order of magnitude greater than the mean current and comparable to the tidal currents near the bottom. The bottom-trapped TRWs had an approximate trapping depth of 325 m and reference wavelength of ~82 km, which were likely excited by eddies above. Upper layer current speed that peaked approximately every 2 months could offer the energy sources for the persistent TRWs in the southern SCS. Energetic bottom-trapped TRWs may have a comparable role in deep circulation to tides in areas with complex topography. PMID:27075644

Plan of deep underground construction for investigations on high-level radioactive waste storage

International Nuclear Information System (INIS)

Mayanovskij, M.S.

1996-01-01

The program of studies of the Japanese PNC corporation on construction of deep underground storage for high-level radioactive wastes is presented. The program is intended for 20 years. The total construction costs equal about 20 billion yen. The total cost of the project is equal to 60 billion yen. The underground part is planned to reach 1000 m depth

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

International Nuclear Information System (INIS)

Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

2014-01-01

A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

Effect of trap position on the efficiency of trapping in treelike scale-free networks

International Nuclear Information System (INIS)

Zhang Zhongzhi; Lin Yuan; Ma Youjun

2011-01-01

The conventional wisdom is that the role and impact of nodes on dynamical processes in scale-free networks are not homogenous, because of the presence of highly connected nodes at the tail of their power-law degree distribution. In this paper, we explore the influence of different nodes as traps on the trapping efficiency of the trapping problem taking place on scale-free networks. To this end, we study in detail the trapping problem in two families of deterministically growing scale-free networks with treelike structure: one family is non-fractal, the other is fractal. In the first part of this work, we attack a special case of random walks on the two network families with a perfect trap located at a hub, i.e. node with the highest degree. The second study addresses the case with trap distributed uniformly over all nodes in the networks. For these two cases, we compute analytically the mean trapping time (MTT), a quantitative indicator characterizing the trapping efficiency of the trapping process. We show that in the non-fractal scale-free networks the MTT for both cases follows different scalings with the network order (number of network nodes), implying that trap's position has a significant effect on the trapping efficiency. In contrast, it is presented that for both cases in the fractal scale-free networks, the two leading scalings exhibit the same dependence on the network order, suggesting that the location of trap has no essential impact on the trapping efficiency. We also show that for both cases of the trapping problem, the trapping efficiency is more efficient in the non-fractal scale-free networks than in their fractal counterparts.

Influence of trap location on the efficiency of trapping in dendrimers and regular hyperbranched polymers.

Science.gov (United States)

Lin, Yuan; Zhang, Zhongzhi

2013-03-07

The trapping process in polymer systems constitutes a fundamental mechanism for various other dynamical processes taking place in these systems. In this paper, we study the trapping problem in two representative polymer networks, Cayley trees and Vicsek fractals, which separately model dendrimers and regular hyperbranched polymers. Our goal is to explore the impact of trap location on the efficiency of trapping in these two important polymer systems, with the efficiency being measured by the average trapping time (ATT) that is the average of source-to-trap mean first-passage time over every staring point in the whole networks. For Cayley trees, we derive an exact analytic formula for the ATT to an arbitrary trap node, based on which we further obtain the explicit expression of ATT for the case that the trap is uniformly distributed. For Vicsek fractals, we provide the closed-form solution for ATT to a peripheral node farthest from the central node, as well as the numerical solutions for the case when the trap is placed on other nodes. Moreover, we derive the exact formula for the ATT corresponding to the trapping problem when the trap has a uniform distribution over all nodes. Our results show that the influence of trap location on the trapping efficiency is completely different for the two polymer networks. In Cayley trees, the leading scaling of ATT increases with the shortest distance between the trap and the central node, implying that trap's position has an essential impact on the trapping efficiency; while in Vicsek fractals, the effect of location of the trap is negligible, since the dominant behavior of ATT is identical, respective of the location where the trap is placed. We also present that for all cases of trapping problems being studied, the trapping process is more efficient in Cayley trees than in Vicsek fractals. We demonstrate that all differences related to trapping in the two polymer systems are rooted in their underlying topological structures.

Vitrification treatment options for disposal of greater-than-Class-C low-level waste in a deep geologic repository

International Nuclear Information System (INIS)

Fullmer, K.S.; Fish, L.W.; Fischer, D.K.

1994-11-01

The Department of Energy (DOE), in keeping with their responsibility under Public Law 99-240, the Low-Level Radioactive Waste Policy Amendments Act of 1985, is investigating several disposal options for greater-than-Class C low-level waste (GTCC LLW), including emplacement in a deep geologic repository. At the present time vitrification, namely borosilicate glass, is the standard waste form assumed for high-level waste accepted into the Civilian Radioactive Waste Management System. This report supports DOE's investigation of the deep geologic disposal option by comparing the vitrification treatments that are able to convert those GTCC LLWs that are inherently migratory into stable waste forms acceptable for disposal in a deep geologic repository. Eight vitrification treatments that utilize glass, glass ceramic, or basalt waste form matrices are identified. Six of these are discussed in detail, stating the advantages and limitations of each relative to their ability to immobilize GTCC LLW. The report concludes that the waste form most likely to provide the best composite of performance characteristics for GTCC process waste is Iron Enriched Basalt 4 (IEB4)

Towards trapped antihydrogen

CERN Document Server

Jorgensen, L V; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Page, R D; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2008-01-01

Substantial progress has been made in the last few years in the nascent field of antihydrogen physics. The next big step forward is expected to be the trapping of the formed antihydrogen atoms using a magnetic multipole trap. ALPHA is a new international project that started to take data in 2006 at CERN’s Antiproton Decelerator facility. The primary goal of ALPHA is stable trapping of cold antihydrogen atoms to facilitate measurements of its properties. We discuss the status of the ALPHA project and the prospects for antihydrogen trapping.

Materials Processing Routes to Trap-Free Halide Perovskites

KAUST Repository

Buin, Andrei

2014-11-12

© 2014 American Chemical Society. Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.

Flux trapping and shielding in irreversible superconductors

International Nuclear Information System (INIS)

Frankel, D.J.

1978-05-01

Flux trappings and shielding experiments were carried out on Pb, Nb, Pb-Bi, Nb-Sn, and Nb-Ti samples of various shapes. Movable Hall probes were used to measure fields near or inside the samples as a function of position and of applied field. The trapping of transverse multipole magnetic fields in tubular samples was accomplished by cooling the samples in an applied field and then smoothly reducing the applied field to zero. Transverse quadrupole and sextupole fields with gradients of over 2000 G/cm were trapped with typical fidelity to the original impressed field of a few percent. Transverse dipole fields of up to 17 kG were also trapped with similar fidelity. Shielding experiments were carried out by cooling the samples in zero field and then gradually applying an external field. Flux trapping and shielding abilities were found to be limited by two factors, the pinning strength of the material, and the susceptibility of a sample to flux jumping. The trapping and shielding behavior of flat disk samples in axial fields and thin-walled tubular samples in transverse fields was modeled. The models, which were based on the concept of the critical state, allowed a connection to be made between the pinning strength and critical current level, and the flux trapping and shielding abilities. Adiabatic and dynamic stability theories are discussed and applied to the materials tested. Good qualitative, but limited quantitative agreement was obtained between the predictions of the theoretical stability criteria and the observed flux jumping behavior

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Radon 222 levels in deep well waters of Toluca municipality (county)

International Nuclear Information System (INIS)

Olguin Gutierrez, Maria Teresa.

1990-01-01

The levels of Radon 222 were determined in 46 deep (50-180m) wells in the city and county of Toluca, as well as the annual radiation dose that the stomach admits when ingesting such water. The method used for the quantification of Radon 222 was liquid scintillation counting. The result revealed that levels of Radon 222 in the studied area in the range of 0 to 320 pCi l -1 . In the case of the equivalent annual dose that the stomach (empty) admits due to ingestion of water from the wells, values are in an interval between 0 to 95 mrem a -1 . This values are well below the level established by the International Commission of Radiological Protection (ICRP). The wells that had the higher concentration of Radon 222 were found in the regions of Lodo Prieto, Seminario; San Antonio Buenavista and La Trinidad Huichochitlan. (Author)

A Closer Look at Deep Learning Neural Networks with Low-level Spectral Periodicity Features

DEFF Research Database (Denmark)

Sturm, Bob L.; Kereliuk, Corey; Pikrakis, Aggelos

2014-01-01

Systems built using deep learning neural networks trained on low-level spectral periodicity features (DeSPerF) reproduced the most “ground truth” of the systems submitted to the MIREX 2013 task, “Audio Latin Genre Classification.” To answer why this was the case, we take a closer look...

Two-species mixing in a nested Penning trap for antihydrogen trapping

International Nuclear Information System (INIS)

Ordonez, C. A.; Weathers, D. L.

2008-01-01

There exists an international quest to trap neutral antimatter in the form of antihydrogen for scientific study. One method that is being developed for trapping antihydrogen employs a nested Penning trap. Such a trap serves to mix positrons and antiprotons so as to produce low energy antihydrogen atoms. Mixing is achieved when the confinement volumes of the two species overlap one another. In the work presented here, a theoretical understanding of the mixing process is developed by analyzing a mixing scheme that was recently reported [G. Gabrielse et al., Phys. Rev. Lett. 100, 113001 (2008)]. The results indicate that positron space charge or collisions among antiprotons may substantially reduce the fraction of antiprotons that have an energy suitable for antihydrogen trapping

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Dynamic analysis of trapping and escaping in dual beam optical trap

Science.gov (United States)

Li, Wenqiang; Hu, Huizhu; Su, Heming; Li, Zhenggang; Shen, Yu

2016-10-01

In this paper, we simulate the dynamic movement of a dielectric sphere in optical trap. This dynamic analysis can be used to calibrate optical forces, increase trapping efficiency and measure viscous coefficient of surrounding medium. Since an accurate dynamic analysis is based on a detailed force calculation, we calculate all forces a sphere receives. We get the forces of dual-beam gradient radiation pressure on a micron-sized dielectric sphere in the ray optics regime and utilize Einstein-Ornstein-Uhlenbeck to deal with its Brownian motion forces. Hydrodynamic viscous force also exists when the sphere moves in liquid. Forces from buoyance and gravity are also taken into consideration. Then we simulate trajectory of a sphere when it is subject to all these forces in a dual optical trap. From our dynamic analysis, the sphere can be trapped at an equilibrium point in static water, although it permanently fluctuates around the equilibrium point due to thermal effects. We go a step further to analyze the effects of misalignment of two optical traps. Trapping and escaping phenomena of the sphere in flowing water are also simulated. In flowing water, the sphere is dragged away from the equilibrium point. This dragging distance increases with the decrease of optical power, which results in escaping of the sphere with optical power below a threshold. In both trapping and escaping process we calculate the forces and position of the sphere. Finally, we analyze a trapping region in dual optical tweezers.

Optical trapping for analytical biotechnology.

Science.gov (United States)

Ashok, Praveen C; Dholakia, Kishan

2012-02-01

We describe the exciting advances of using optical trapping in the field of analytical biotechnology. This technique has opened up opportunities to manipulate biological particles at the single cell or even at subcellular levels which has allowed an insight into the physical and chemical mechanisms of many biological processes. The ability of this technique to manipulate microparticles and measure pico-Newton forces has found several applications such as understanding the dynamics of biological macromolecules, cell-cell interactions and the micro-rheology of both cells and fluids. Furthermore we may probe and analyse the biological world when combining trapping with analytical techniques such as Raman spectroscopy and imaging. Copyright © 2011 Elsevier Ltd. All rights reserved.

A combined methodology using electrical resistivity tomography, ordinary kriging and porosimetry for quantifying total C trapped in carbonate formations associated with natural analogues for CO2 leakage

Science.gov (United States)

Prado-Pérez, A. J.; Aracil, E.; Pérez del Villar, L.

2014-06-01

Currently, carbon deep geological storage is one of the most accepted methods for CO2 sequestration, being the long-term behaviour assessment of these artificial systems absolutely essential to guarantee the safety of the CO2 storage. In this sense, hydrogeochemical modelling is being used for evaluating any artificial CO2 deep geological storage as a potential CO2 sinkhole and to assess the leakage processes that are usually associated with these engineered systems. Carbonate precipitation, as travertines or speleothems, is a common feature in the CO2 leakage scenarios and, therefore, is of the utmost importance to quantify the total C content trapped as a stable mineral phase in these carbonate formations. A methodology combining three classical techniques such as: electrical resistivity tomography, geostatistical analysis and mercury porosimetry is described in this work, which was developed for calculating the total amount of C trapped as CaCO3 associated with the CO2 leakages in Alicún de las Torres natural analogue (Granada, Spain). The proposed methodology has allowed estimating the amount of C trapped as calcite, as more than 1.7 Mt. This last parameter, focussed on an artificial CO2 deep geological storage, is essential for hydrogeochemical modellers when evaluating whether CO2 storages constitute or not CO2 sinkholes. This finding is extremely important when assessing the long-term behaviour and safety of any artificial CO2 deep geological storage.

Using Deep Learning Techniques to Forecast Environmental Consumption Level

Directory of Open Access Journals (Sweden)

Donghyun Lee

2017-10-01

Full Text Available Artificial intelligence is a promising futuristic concept in the field of science and technology, and is widely used in new industries. The deep-learning technology leads to performance enhancement and generalization of artificial intelligence technology. The global leader in the field of information technology has declared its intention to utilize the deep-learning technology to solve environmental problems such as climate change, but few environmental applications have so far been developed. This study uses deep-learning technologies in the environmental field to predict the status of pro-environmental consumption. We predicted the pro-environmental consumption index based on Google search query data, using a recurrent neural network (RNN model. To verify the accuracy of the index, we compared the prediction accuracy of the RNN model with that of the ordinary least square and artificial neural network models. The RNN model predicts the pro-environmental consumption index better than any other model. We expect the RNN model to perform still better in a big data environment because the deep-learning technologies would be increasingly sophisticated as the volume of data grows. Moreover, the framework of this study could be useful in environmental forecasting to prevent damage caused by climate change.

Status and outlook of CHIP-TRAP: The Central Michigan University high precision Penning trap

Science.gov (United States)

Redshaw, M.; Bryce, R. A.; Hawks, P.; Gamage, N. D.; Hunt, C.; Kandegedara, R. M. E. B.; Ratnayake, I. S.; Sharp, L.

2016-06-01

At Central Michigan University we are developing a high-precision Penning trap mass spectrometer (CHIP-TRAP) that will focus on measurements with long-lived radioactive isotopes. CHIP-TRAP will consist of a pair of hyperbolic precision-measurement Penning traps, and a cylindrical capture/filter trap in a 12 T magnetic field. Ions will be produced by external ion sources, including a laser ablation source, and transported to the capture trap at low energies enabling ions of a given m / q ratio to be selected via their time-of-flight. In the capture trap, contaminant ions will be removed with a mass-selective rf dipole excitation and the ion of interest will be transported to the measurement traps. A phase-sensitive image charge detection technique will be used for simultaneous cyclotron frequency measurements on single ions in the two precision traps, resulting in a reduction in statistical uncertainty due to magnetic field fluctuations.

Evaluation method for acoustic trapping performance by tracking motion of trapped microparticle

Science.gov (United States)

Lim, Hae Gyun; Ham Kim, Hyung; Yoon, Changhan

2018-05-01

We report a method to evaluate the performances of a single-beam acoustic tweezer using a high-frequency ultrasound transducer. The motion of a microparticle trapped by a 45-MHz single-element transducer was captured and analyzed to deduce the magnitude of trapping force. In the proposed method, the motion of a trapped microparticle was analyzed from a series of microscopy images to compute trapping force; thus, no additional equipment such as microfluidics is required. The method could be used to estimate the effective trapping force in an acoustic tweezer experiment to assess cell membrane deformability by attaching a microbead to the surface of a cell and tracking the motion of the trapped bead, which is similar to a bead-based assay that uses optical tweezers. The results showed that the trapping force increased with increasing acoustic intensity and duty factor, but the force eventually reached a plateau at a higher acoustic intensity. They demonstrated that this method could be used as a simple tool to evaluate the performance and to optimize the operating conditions of acoustic tweezers.

The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

2015-07-15

Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Science.gov (United States)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Magnetic field stabilization in THe-Trap

Energy Technology Data Exchange (ETDEWEB)

Streubel, Sebastian; Eronen, Tommi; Hoecker, Martin; Ketter, Jochen; Blaum, Klaus [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Van Dyck, Robert S. Jr. [Department of Physics, University of Washington, Seattle, WA (United States)

2012-07-01

THe-Trap is a Penning trap mass spectrometer dedicated to measure the {sup 3}H to {sup 3}He mass ratio aiming to a relative mass uncertainty better than 10{sup -11}. The most vital prerequisite for this measurement is a stable magnetic field: The relative temporal fluctuations during a measurement cycle of typically 1 hour, should be better than 10{sup -11}. The 5.26 T field is provided by a superconducting magnet. Unfortunately, the materials within the cryostat have a temperature-dependent susceptibility which necessitates a temperature stabilization. The stabilization is achieved by controlling the liquid helium level above the traps, and by keeping the pressure of the liquid helium constant. An important part of the system is the pressure reference, which is stable at a 0.04 Pa level. In addition to the stabilization of the field fluctuations within the cryostat itself, a system to cancel external fluctuations is set up consisting of a passive coil with a shielding factor of up to 180 build into the cryostat. Furthermore, a Helmholtz coil pair is placed around the cryostat. The compensation signal is provided by a custom-built flux-gate magnetometer. Technical details about the stabilization systems are given.

Calcium Atom Trap for Atom Trap Mass Spectrometer

Energy Technology Data Exchange (ETDEWEB)

Ko, Kwang Hoon; Park, Hyun Min; Han, Jae Min; Kim, Taek Soo; Cha, Yong Ho; Lim, Gwon; Jeong, Do Young [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-05-15

Trace isotope analysis has been an important role in science, archaeological dating, geology, biology and nuclear industry. Artificially produced fission products such as Sr-90, Cs-135 and Kr-85 can be released to the environment when nuclear accident occurs and the reprocessing factory operates. Thus, the analysis of them has been of interest in nuclear industry. But it is difficult to detect them due to low natural abundance less then 10-10. The ultra-trace radio isotopes have been analyzed by the radio-chemical method, accelerator mass spectrometer, and laser based method. The radiochemical method has been used in the nuclear industry. But this method has disadvantages of long measurement time for long lived radioisotopes and toxic chemical process for the purification. The accelerator mass spectrometer has high isotope selectivity, but the system is huge and it has the isobar effects. The laser based method, such as RIMS (Resonance Ionization Mass Spectrometry) is a basically isobar-effect free method. Recently, ATTA (Atom Trap Trace Analysis), one of the laser based method, has been successfully demonstrated sufficient isotope selectivity with small system size. It has been applied for the detection of Kr-81 and Kr-85. However, it is not suitable for real sample detection, because it requires steady atomic beam generation during detection and is not allowed simultaneous detection of other isotopes. Therefore, we proposed the coupled method of Atom Trap and Mass Spectrometer. It consists of three parts, neutral atom trap, ionization and mass spectrometer. In this paper, we present the demonstration of the magneto-optical trap of neutral calcium. We discuss the isotope selective characteristics of the MOT (Magneto Optical Trap) of calcium by the fluorescence measurement. In addition, the frequency stabilization of the trap beam will be presented

Observation of Hyperfine Transitions in Trapped Ground-State Antihydrogen

CERN Document Server

Olin, Arthur

2015-01-01

This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4~parts~in~$10^3$. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

Observation of hyperfine transitions in trapped ground-state antihydrogen

Energy Technology Data Exchange (ETDEWEB)

Collaboration: A. Olin for the ALPHA Collaboration

2015-08-15

This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4 parts in 10{sup 3}. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

Kinetic model of the bichromatic dark trap for atoms

Science.gov (United States)

Krasnov, I. V.

2017-08-01

A kinetic model of atom confinement in a bichromatic dark trap (BDT) is developed with the goal of describing its dissipative properties. The operating principle of the deep BDT is based on using the combination of multiple bichromatic cosine-Gaussian optical beams (CGBs) for creating high-potential barriers, which is described in our previous work (Krasnov 2016 Laser Phys. 26 105501). In the indicated work, particle motion in the BDT is described in terms of classical trajectories. In the present study, particle motion is analyzed by means of the Wigner function (phase-space distribution function (DF)), which allows one to properly take into account the quantum fluctuations of optical forces. Besides, we consider an improved scheme of the BDT, where CGBs create, apart from plane potential barriers, a narrow cooling layer. We find an asymptotic solution of the Fokker-Planck equation for the DF and show that the DF of particles deeply trapped in a BDT with a cooling layer is the Tsallis distribution with the effective temperature, which can be considerably lower than in a BDT without a cooling layer. Moreover, it can be adjusted by slightly changing the CGBs’ radii. We also study the effect of particle escape from the trap due to the scattering of resonant photons and show that the particle lifetime in a BDT can exceed several tens of hours when it is limited by photon scattering.

Considerations affecting deep-well disposal of tritium-bearing low-level aqueous waste from nuclear fuel reprocessing plants

International Nuclear Information System (INIS)

Trevorrow, L.E.; Warner, D.L.; Steindler, M.J.

1977-03-01

Present concepts of disposal of low-level aqueous wastes (LLAW) that contain much of the fission-product tritium from light water reactors involve dispersal to the atmosphere or to surface streams at fuel reprocessing plants. These concepts have been challenged in recent years. Deep-well injection of low-level aqueous wastes, an alternative to biospheric dispersal, is the subject of this presentation. Many factors must be considered in assessing its feasibility, including technology, costs, environmental impact, legal and regulatory constraints, and siting. Examination of these factors indicates that the technology of deep-well injection, extensively developed for other industrial wastes, would require little innovation before application to low-level aqueous wastes. Costs would be low, of the order of magnitude of 10 -4 mill/kWh. The environmental impact of normal deep-well disposal would be small, compared with dispersal to the atmosphere or to surface streams; abnormal operation would not be expected to produce catastrophic results. Geologically suitable sites are abundant in the U.S., but a well would best be co-located with the fuel-reprocessing plant where the LLAW is produced. Legal and regulatory constraints now being developed will be the most important determinants of the feasibility of applying the method

Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

International Nuclear Information System (INIS)

Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

2012-01-01

Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

Natural gas geological characteristics and great discovery of large gas fields in deep-water area of the western South China Sea

Directory of Open Access Journals (Sweden)

Zhenfeng Wang

2015-12-01

Full Text Available To accelerate the petroleum exploration in deep sea of China, since the period of “the 11th Five-Year Plan”, the sedimentary process, source rock formation and hydrocarbon generation and expulsion process in deep-water area of the Qiongdongnan Basin in the western South China Sea have been studied systematically using the data like large-area 3D seismic survey, logging, drill core (cuttings and geochemical analysis, providing three innovative understandings, i.e. excellent hydrocarbon source conditions, good accumulation conditions, and grouping and zonal distribution of large exploration targets. From the study, the following conclusions are drawn. First, the deep-water area located in the southern and central parts of the Qiongdongnan Basin was formed under the control of such tectonic events as Indosinian–Eurasian Plate collision, Himalayan uplifting and South China Sea expansion, and experienced Paleogene lift and Neogene depression stages. Second, accompanied by lacustrine deposition, faulting activity was violent in Eocene; whereas in Early Oligocene, rift continued to develop under a sedimentary environment of marine–terrestrial transitional facies and littoral-neritic facies. Third, oil generation predominated Eocene lacustrine mudstone and gas generation predominated Lower Oligocene marine–terrestrial transitional facies coal-measure strata compose two sets of major source rocks. Fourth, analysis in respect of thermal evolution level, hydrocarbon generation volume and hydrocarbon generation intensity shows that Ledong, Lingshui, Baodao and Changchang sags belong to potential hydrocarbon-rich kitchens, among which Ledong and Lingshui sags have been proved to have great hydrocarbon generation potential by drilling. Fifth, researches of deep-water sedimentology and hydrocarbon accumulation dynamics reveal that Paleogene and Neogene plays are developed vertically, and favorable hydrocarbon accumulation zones like the Central

Analyses of compensation related defects in II-VI compounds

International Nuclear Information System (INIS)

Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

1998-01-01

The deep levels present in semiconducting CdTe and semi-insulating (SI) CdTe:Cl and Cd 0.8 Zn 0.2 Te have been investigated by means of cathodoluminescence (CL), deep level transient spectroscopy (DLTS), photo-DLTS (PDLTS) and photo induced current transient spectroscopy (PICTS). PICTS and PDLTS can be applied to SI materials and allowed to determine whether the observed deep levels are hole or electron traps. Among the observed deep centers, the authors have focused their attention on those involved in the compensation process such as the so called center A and the deep traps located near midgap. They have identified a deep acceptor, labelled H, and a deep donor, labelled E, the latter is peculiar to CdTe:Cl and can be a good candidate for the deep donor level needed to explain the compensation process in SI CdTe:Cl

A live-trap and trapping technique for fossorial mammals

African Journals Online (AJOL)

mammals. G.C. Hickman. An effective live-trap was designed for Cryptomys hottentotus .... that there is an animal in the burrow system, and to lessen the likelihood of the .... the further testing and modification of existing trap types. Not only is it ...

Review: Groundwater development and management in the Deccan Traps (basalts) of western India

Science.gov (United States)

Limaye, Shrikant Daji

2010-05-01

The Deccan Traps or the basalts of western India are the largest exposure of basic lava flows covering about 500,000 km2. Groundwater occurrence in the Deccan Traps is in phreatic condition in the weathered zone above the hard rock and in semi-confined condition in the fissures, fractures, joints, cooling cracks, lava flow junctions and in the inter-trappean beds between successive lava flows, within the hard rock. Dug wells, dug-cum-bored wells and boreholes or bore wells are commonly used for obtaining groundwater. The yield is small, usually in the range of 1-100 m3/day. The average land holding per farming family is only around 2 ha. Recently, due to the ever increasing number of dug wells and deep bore wells, the water table has been falling in several watersheds, especially in those lying in the semi-arid region of the traps, so that now the emphasis has shifted from development to sustainable management. Issues like climatic change, poverty mitigation in villages, sustainable development, rapid urbanization of the population, and resource pollution have invited the attention of politicians, policy makers, government agencies and non-governmental organizations towards watershed management, forestation, soil and water conservation, recharge augmentation and, above all, the voluntary control of groundwater abstraction in the Deccan Traps terrain.

Case Study: Trap Crop with Pheromone Traps for Suppressing Euschistus servus (Heteroptera: Pentatomidae in Cotton

Directory of Open Access Journals (Sweden)

P. G. Tillman

2012-01-01

Full Text Available The brown stink bug, Euschistus servus (Say, can disperse from source habitats, including corn, Zea mays L., and peanut, Arachis hypogaea L., into cotton, Gossypium hirsutum L. Therefore, a 2-year on-farm experiment was conducted to determine the effectiveness of a sorghum (Sorghum bicolor (L. Moench spp. bicolor trap crop, with or without Euschistus spp. pheromone traps, to suppress dispersal of this pest to cotton. In 2004, density of E. servus was lower in cotton fields with sorghum trap crops (with or without pheromone traps compared to control cotton fields. Similarly, in 2006, density of E. servus was lower in cotton fields with sorghum trap crops and pheromone traps compared to control cotton fields. Thus, the combination of the sorghum trap crop and pheromone traps effectively suppressed dispersal of E. servus into cotton. Inclusion of pheromone traps with trap crops potentially offers additional benefits, including: (1 reducing the density of E. servus adults in a trap crop, especially females, to possibly decrease the local population over time and reduce the overwintering population, (2 reducing dispersal of E. servus adults from the trap crop into cotton, and (3 potentially attracting more dispersing E. servus adults into a trap crop during a period of time when preferred food is not prevalent in the landscape.