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Sample records for deep level traps

  1. Correlation of a generation-recombination center with a deep level trap in GaN

    International Nuclear Information System (INIS)

    Nguyen, X. S.; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J.

    2015-01-01

    We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E c  − 0.26 eV, E c  − 0.59 eV, and E c  − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E c  − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E c  − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials

  2. Distinguishing bulk traps and interface states in deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Coelho, A V P; Adam, M C; Boudinov, H

    2011-01-01

    A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

  3. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  4. Theory of deep level trap effects on generation-recombination noise in HgCdTe photoconductors

    International Nuclear Information System (INIS)

    Iverson, A.E.; Smith, D.L.

    1985-01-01

    We present a theory of the effect of deep level centers on the generation-recombination (g-r) noise and responsivity of an intrinsic photoconductor. The deep level centers can influence the g-r noise and responsivity in three main ways: (i) they can shorten the bulk carrier lifetime by Shockley--Read--Hall recombination; (ii) for some values of the capture cross sections, deep level densities, and temperature, the deep levels can trap a significant fraction of the photogenerated minority carriers. This trapping reduces the effective minority carrier mobility and diffusivity and thus reduces the effect of carrier sweep out on both g-r noise and responsivity; (iii) the deep level centers add a new thermal noise source, which results from fluctuations between bound and free carriers. The strength of this new noise source decreases with decreasing temperature at a slower rate than band-to-band thermal g-r noise. Calculations have been performed for a X = 0.21, n-type Hg/sub 1-x/Cd/sub x/Te photoconductor using the parameters of a commonly occurring deep level center in this material. We find that for typical operating conditions photoconductive detector performance begins to degrade as the deep level density begins to exceed 10 16 cm -3

  5. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  6. Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

    International Nuclear Information System (INIS)

    McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

    2002-01-01

    Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

  7. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

    International Nuclear Information System (INIS)

    Gelczuk, Ł.; Kudrawiec, R.; Henini, M.

    2014-01-01

    Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N = 0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels. The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.

  8. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

    2016-04-28

    The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  9. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Science.gov (United States)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

    2016-04-01

    The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  10. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

    2016-01-01

    The impact of proton irradiation on the threshold voltage (V T ) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V T was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10 14  cm −2 . Silvaco Atlas simulations of V T shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V T dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V T shifts. The proton irradiation induced V T shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  11. Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

    International Nuclear Information System (INIS)

    Dharmarasu, Nethaji; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Takamoto, Tatsuya; Ohshima, Takeshi; Itoh, Hisayoshi; Imaizumi, Mitsuru; Matsuda, Sumio

    2002-01-01

    We report the properties of observed defects in n + /p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E v +0.90±0.05 eV), HP2 (E v +0.73±0.05 eV), H2 (E v +0.55 eV), and EP1 (E c -0.54 eV), were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 trap present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not

  12. A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

    Science.gov (United States)

    Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

    2018-04-01

    In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

  13. Methods in mooring deep sea sediment traps

    Digital Repository Service at National Institute of Oceanography (India)

    Venkatesan, R.; Fernando, V.; Rajaraman, V.S.; Janakiraman, G.

    The experience gained during the process of deployment and retrieval of nearly 39 sets of deep sea sediment trap moorings on various ships like FS Sonne, ORV Sagarkanya and DSV Nand Rachit are outlined. The various problems encountered...

  14. The role of deep level traps in barrier height of 4H-SiC Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2012-09-01

    This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

  15. Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

    Science.gov (United States)

    Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

    2018-02-01

    InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

  16. New Method for Shallow and Deep Trap Distribution Analysis in Oil Impregnated Insulation Paper Based on the Space Charge Detrapping

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2018-01-01

    Full Text Available Space charge has close relation with the trap distribution in the insulation material. The phenomenon of charges trapping and detrapping has attracted significant attention in recent years. Space charge and trap parameters are effective parameters for assessing the ageing condition of the insulation material qualitatively. In this paper, a new method for calculating trap distribution based on the double exponential fitting analysis of charge decay process and its application on characterizing the trap distribution of oil impregnated insulation paper was investigated. When compared with the common first order exponential fitting analysis method, the improved dual-level trap method could obtain the energy level range and density of both shallow traps and deep traps, simultaneously. Space charge decay process analysis of the insulation paper immersed with new oil and aged oil shows that the improved trap distribution calculation method can distinguish the physical defects and chemical defects. The trap density shows an increasing trend with the oil ageing, especially for the deep traps mainly related to chemical defects. The greater the energy could be filled by the traps, the larger amount of charges could be trapped, especially under higher electric field strength. The deep trap energy level and trap density could be used to characterize ageing. When one evaluates the ageing condition of oil-paper insulation using trap distribution parameters, the influence of oil performance should not be ignored.

  17. Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

    International Nuclear Information System (INIS)

    Yang Yan; Li Sheng-Tao; Ding Can; Cheng Peng-Fei

    2011-01-01

    This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I—V (current—voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors. (fluids, plasmas and electric discharges)

  18. Neutrophil extracellular traps promote deep vein thrombosis in mice

    Science.gov (United States)

    Brill, A.; Fuchs, T.A.; Savchenko, A.S.; Thomas, G.M.; Martinod, K.; De Meyer, S.F.; Bhandari, A.A.; Wagner, D.D.

    2011-01-01

    Summary Background Upon activation, neutrophils can release nuclear material known as neutrophil extracellular traps (NETs), which were initially described as a part of antimicrobial defense. Extracellular chromatin was recently reported to be pro-thrombotic in vitro and to accumulate in plasma and thrombi of baboons with experimental deep vein thrombosis (DVT). Objective To explore the source and role of extracellular chromatin in DVT. Methods We used an established murine model of DVT induced by flow restriction (stenosis) in the inferior vena cava (IVC). Results We demonstrate that the levels of extracellular DNA increase in plasma after 6 h IVC stenosis, compared to sham-operated mice. Immunohistochemical staining revealed the presence of Gr-1-positive neutrophils in both red (RBC-rich) and white (platelet-rich) parts of thrombi. Citrullinated histone H3 (CitH3), an element of NETs’ structure, was present only in the red part of thrombi and was frequently associated with the Gr-1 antigen. Immunofluorescent staining of thrombi showed proximity of extracellular CitH3 and von Willebrand factor (VWF), a platelet adhesion molecule crucial for thrombus development in this model. Infusion of Deoxyribonuclease 1 (DNase 1) protected mice from DVT after 6 h and also 48 h IVC stenosis. Infusion of an unfractionated mixture of calf thymus histones increased plasma VWF and promoted DVT early after stenosis application. Conclusions Extracellular chromatin, likely originating from neutrophils, is a structural part of a venous thrombus and both the DNA scaffold and histones appear to contribute to the pathogenesis of DVT in mice. NETs may provide new targets for DVT drug development. PMID:22044575

  19. Deep levels in silicon–oxygen superlattices

    International Nuclear Information System (INIS)

    Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M

    2016-01-01

    This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)

  20. Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

    International Nuclear Information System (INIS)

    Koprowski, A; Humbel, O; Plappert, M; Krenn, H

    2015-01-01

    We have performed an analytical study of the effects of oxygen plasma ashing processes in semiconductor device fabrication and its impact on minority carrier lifetime in high voltage semiconductor devices. Our work includes a critical background study of life time killing mechanisms by deep traps imparted into the semiconductor by barrel plasma ashing. The Elymat technique provides the opportunity to measure lifetime and diffusion length of minority carriers and surface photo voltage (SPV) measurement was used to analyse influences of process parameters such as photoresist, time budget and positioning in the process chamber. It was shown that in microwave plasma processes the diffusion length changes severely with tempering at 200 °C, whereas RF-plasma processes show a significant process time-dependence. Batch tools in general suffer from a strong first wafer effect which could be correlated with the static electrical parameters of the semiconductor devices. The trap identities were detected by using deep level transient spectroscopy and the chemical species of the traps has been proven by inductive coupled plasma mass spectrometry. The deep-bandgap trap energies are reliable fingerprints of the chosen process parameters such as process time and of resist-influences. By microwave plasma processes intrinsic Fe and FeB-complex levels were identified and a good agreement with the SPV-measurement and electrical device characteristic was shown. RF-plasma processes impart levels attributed to Pt levels and an additional level, which could be identified as a trap level probably forming a complex of Pt and H. (paper)

  1. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    International Nuclear Information System (INIS)

    Kaniewska, M.; Engstroem, O.

    2007-01-01

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10 15 cm -3 at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures

  2. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Kaniewska, M. [Department of Analysis of Semicoductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: kaniew@ite.waw.pl; Engstroem, O. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

    2007-09-15

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10{sup 15} cm{sup -3} at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures.

  3. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2012-12-01

    Full Text Available Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL and the photo-ionization spectroscopy (PIS implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

  4. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  5. Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

    International Nuclear Information System (INIS)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

    1997-01-01

    The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

  6. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    International Nuclear Information System (INIS)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-01-01

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10 17  cm −3 to (2–5) × 10 14  cm −3 . The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10 13  cm −3 versus 2.9 × 10 16  cm −3 in the standard samples, with a similar decrease in the electron traps concentration

  7. Deep energetic trap states in organic photovoltaic devices

    KAUST Repository

    Shuttle, Christopher G.; Treat, Neil D.; Douglas, Jessica D.; Frechet, Jean; Chabinyc, Michael L.

    2011-01-01

    The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Deep energetic trap states in organic photovoltaic devices

    KAUST Repository

    Shuttle, Christopher G.

    2011-11-23

    The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Investigation of deep levels in GaInNAs

    International Nuclear Information System (INIS)

    Abulfotuh, F.; Balcioglu, A.; Friedman, D.; Geisz, J.; Kurtz, S.

    1999-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length. copyright 1999 American Institute of Physics

  10. Investigation of Deep Levels in GaInNas

    International Nuclear Information System (INIS)

    Balcioglu, A.; Friedman, D.; Abulfotuh, F.; Geisz, J.; Kurtz, S.

    1998-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length

  11. Thermally assisted OSL from deep traps in Al2O3:C

    International Nuclear Information System (INIS)

    Polymeris, G.S.; Raptis, S.; Afouxenidis, D.; Tsirliganis, N.C.; Kitis, G.

    2010-01-01

    The present work suggests an alternative experimental method in order to not only measure the signal of the deep traps in Al 2 O 3 :C without heating the sample to temperatures greater than 500 o C, but also use this signal for high dose level dosimetry purposes as well. This method consists of photo transfer OSL measurements performed at elevated temperatures using the blue LEDs (470 nm, FWHM 20 nm) housed at commercial Riso TL/OSL systems, after the sample was previously heated up to 500 o C in order to empty its main TL dosimetric trap. The influence of this procedure on specific features such as glow curve shape and sensitivity of the main TL glow peak was also studied.

  12. Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

    International Nuclear Information System (INIS)

    Bum Park, Chang

    2014-01-01

    Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔV T ) is presented by providing a ΔV T model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ∼1.8 and ∼2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time. (paper)

  13. Studies of deep levels in He+-irradiated silicon

    International Nuclear Information System (INIS)

    Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

    1997-01-01

    Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

  14. Deep superconducting magnetic traps for neutral atoms and molecules

    International Nuclear Information System (INIS)

    Harris, J.G.E.; Michniak, R.A.; Nguyen, S.V.; Campbell, W.C.; Egorov, D.; Maxwell, S.E.; Buuren, L.D. van; Doyle, J.M.

    2004-01-01

    We describe the design, construction and performance of three realizations of a high-field superconducting magnetic trap for neutral atoms and molecules. Each of these traps utilizes a pair of coaxial coils in the anti-Helmholtz geometry and achieves depths greater than 4 T, allowing it to capture magnetic atoms and molecules cooled in a cryogenic buffer gas. Achieving this depth requires that the repulsive force between the coils (which can exceed 30 metric tons) be contained. We also describe additional features of the traps, including the elimination of trapped fluxes from the coils and the integration of the coils into a cryogenic vacuum environment suitable for producing cold atoms and molecules

  15. Deep cooling of optically trapped atoms implemented by magnetic levitation without transverse confinement

    Science.gov (United States)

    Li, Chen; Zhou, Tianwei; Zhai, Yueyang; Xiang, Jinggang; Luan, Tian; Huang, Qi; Yang, Shifeng; Xiong, Wei; Chen, Xuzong

    2017-05-01

    We report a setup for the deep cooling of atoms in an optical trap. The deep cooling is implemented by eliminating the influence of gravity using specially constructed magnetic coils. Compared to the conventional method of generating a magnetic levitating force, the lower trap frequency achieved in our setup provides a lower limit of temperature and more freedoms to Bose gases with a simpler solution. A final temperature as low as ˜ 6 nK is achieved in the optical trap, and the atomic density is decreased by nearly two orders of magnitude during the second stage of evaporative cooling. This deep cooling of optically trapped atoms holds promise for many applications, such as atomic interferometers, atomic gyroscopes, and magnetometers, as well as many basic scientific research directions, such as quantum simulations and atom optics.

  16. The injection spectroscopy method for the study of deep traps in CdTe films

    International Nuclear Information System (INIS)

    Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

    1999-01-01

    A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

  17. The effects of deep trap population on the thermoluminescence of Al{sub 2}O{sub 3}:C

    Energy Technology Data Exchange (ETDEWEB)

    Yukihara, E.G. E-mail: yukihara@thor.phy.okstate.edu; Whitley, V.H.; Polf, J.C.; Klein, D.M.; McKeever, S.W.S.; Akselrod, A.E.; Akselrod, M.S

    2003-12-01

    The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al{sub 2}O{sub 3}:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F{sup +}-centers. The data lead to the suggestion that the competing deep traps which become unstable at {approx}800-875 K are hole traps, and that the competing deep traps which become unstable at {approx}1100-1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.

  18. Shallow trapping vs. deep polarons in a hybrid lead halide perovskite, CH3NH3PbI3.

    Science.gov (United States)

    Kang, Byungkyun; Biswas, Koushik

    2017-10-18

    There has been considerable speculation over the nature of charge carriers in organic-inorganic hybrid perovskites, i.e., whether they are free and band-like, or they are prone to self-trapping via short range deformation potentials. Unusually long minority-carrier diffusion lengths and moderate-to-low mobilities, together with relatively few deep defects add to their intrigue. Here we implement density functional methods to investigate the room-temperature, tetragonal phase of CH 3 NH 3 PbI 3 . We compare charge localization behavior at shallow levels and associated lattice relaxation versus those at deep polaronic states. The shallow level originates from screened Coulomb interaction between the perturbed host and an excited electron or hole. The host lattice has a tendency towards forming these shallow traps where the electron or hole is localized not too far from the band edge. In contrast, there is a considerable potential barrier that must be overcome in order to initiate polaronic hole trapping. The formation of a hole polaron (I 2 - center) involves strong lattice relaxation, including large off-center displacement of the organic cation, CH 3 NH 3 + . This type of deep polaron is energetically unfavorable, and active shallow traps are expected to shape the carrier dynamics in this material.

  19. Observation of Deep Traps Responsible for Current Collapse in GaN Metal-Semiconductor Field-Effect Transistors

    National Research Council Canada - National Science Library

    Klein, P. B; Freitas, Jr., J. A; Binari, S. C; Wickenden, A. E

    1999-01-01

    ... of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice...

  20. Dislocation-related trap levels in nitride-based light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy); Meneghini, Matteo; Zanoni, Enrico [Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-05-26

    Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

  1. Dislocation-related trap levels in nitride-based light emitting diodes

    International Nuclear Information System (INIS)

    Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna; Meneghini, Matteo; Zanoni, Enrico; Zhu, Dandan; Humphreys, Colin

    2014-01-01

    Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10 9 cm −2 and a low dislocation density of 3 × 10 8 cm −2 . Three trapping levels for electrons were revealed, named A, A1, and B, with energies E A  ≈ 0.04 eV, E A1  ≈ 0.13 eV, and E B  ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

  2. Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Polyakov, A. Y. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Smirnov, N. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Yakimov, E. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pearton, S. J. [University of Florida, Gainesville, Florida 32611 (United States)

    2016-01-07

    Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

  3. Scanning ion deep level transient spectroscopy: I. Theory

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction

  4. Electronic circuit provides automatic level control for liquid nitrogen traps

    Science.gov (United States)

    Turvy, R. R.

    1968-01-01

    Electronic circuit, based on the principle of increased thermistor resistance corresponding to decreases in temperature provides an automatic level control for liquid nitrogen cold traps. The electronically controlled apparatus is practically service-free, requiring only occasional reliability checks.

  5. Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guochang; Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ (United Kingdom); Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

    2016-08-08

    Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.

  6. DEEP HANGING WALL TRAPS-THE REMAINING PROMISSING TARGETS FOR OIL EXPLORATION IN THE NIGER DELTA

    International Nuclear Information System (INIS)

    Oton, S.W

    2004-01-01

    It is well known that the most dominant types of Hydrocarbon types found in the petroliferous Niger Delta are the classical rollover anticlinical traps 'I of oil exploration in the delta, these easy-to-find rollover structures are getting exhausted. They are most numerous at shallow depths in the younger delta front sedimentary sequence. Generally, during this primary oil exploration stage, oil and gas exploration have been concentrated in the shallow depths where they are easy to reach, easy to explore and easy to produce. This means that the present and future exploration campaigns in the Niger Delta should be directed towards other types of hydrocarbon trapping mechanisms that have been mapped in the delta. Many exploration models have been used and oil has been found in at least nine types of traps in the Niger Delta. The contrary (or anitithetic) fault model was used at the close of the last century. This model is so called because the controlling antithetic fault has a regional dip contrary to the structure-building growth fault with which it is associated. These faults, which are widespread in the Niger Delta, are easy to map especially on the Petro geological model. In this period, several promising hydrocarbon accumulations trapped against antithetic faults were discovered and tested. These hydrocarbon targets also seem fully explored and exhausted now. Recently, from modern high resolution 2-D and 3-D seismic data a lot of good prospects have been mapped and drilled in the deep horizon. In the last few years, a lot of unexplored oil have been discovered and tested in the deep horizons. They are mostly in hanging wall traps, at depth below 4,000 meters. This shows that most of the remaining undiscovered hydrocarbons in the Niger Delta may well be in these deep hanging wall traps between 4,000 and close to 5,600 meters. A definite search for deep-seated hanging wall traps is therefore recommended in a bid to find more new reservoirs and thereby increase the

  7. Thermoluminescent and dosimetric properties of anion-defective a-Al2O3 single crystals with filled deep traps

    International Nuclear Information System (INIS)

    Kortov, V.S.; Milman, I.I.; Nikiforov, S.V.

    2002-01-01

    Some new experimental results illustrating the effect of deep traps on luminescent and dosimetric properties of anion-defective single crystals of a-Al 2 O 3 have been described. It was found that deep traps had an electronic origin. They were filled thanks to the photoionisation of F-centres and their filling was accompanied by the conversion of FF+ centres. The experiments revealed an interactive interaction of deep trapping centres. A model taking into account the thermal ionisation of excited states of F-centres was proposed. This model describes the trap filling process and mechanisms of the radio-, photo- and thermoluminescence, TSC and TSEE of the crystals under study. The sensitivity of TLD-500 detectors based on anion-defective a-Al 2 O 3 equalised when deep trapping centres were filled. (author)

  8. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Science.gov (United States)

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  9. Deep Ocean Contribution to Sea Level Rise

    Science.gov (United States)

    Chang, L.; Sun, W.; Tang, H.; Wang, Q.

    2017-12-01

    The ocean temperature and salinity change in the upper 2000m can be detected by Argo floats, so we can know the steric height change of the ocean. But the ocean layers above 2000m represent only 50% of the total ocean volume. Although the temperature and salinity change are small compared to the upper ocean, the deep ocean contribution to sea level might be significant because of its large volume. There has been some research on the deep ocean rely on the very sparse situ observation and are limited to decadal and longer-term rates of change. The available observational data in the deep ocean are too spares to determine the temporal variability, and the long-term changes may have a bias. We will use the Argo date and combine the situ data and topographic data to estimate the temperature and salinity of the sea water below 2000m, so we can obtain a monthly data. We will analyze the seasonal and annual change of the steric height change due to the deep ocean between 2005 and 2016. And we will evaluate the result combination the present-day satellite and in situ observing systems. The deep ocean contribution can be inferred indirectly as the difference between the altimetry minus GRACE and Argo-based steric sea level.

  10. Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition

    Science.gov (United States)

    Bollmann, Joachim; Venter, Andre

    2018-04-01

    A comprehensive understanding of defects in semiconductors remains of primary importance. In this paper the effectiveness of two of the most commonly used semiconductor defect spectroscopy techniques, viz. deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) are reviewed. The analysis of defects present in commercially available SiC diodes shows that admittance spectroscopy allows the identification of deep traps with reduced measurement effort compared to deep Level Transient Spectroscopy (DLTS). Besides the N-donor, well-studied intrinsic defects were detected in these diodes. Determination of their activation energy and defect density, using the two techniques, confirm that the sensitivity of AS is comparable to that of DLTS while, due to its well defined peak shape, the spectroscopic resolution is superior. Additionally, admittance spectroscopy can analyze faster emission processes which make the study of shallow defects more practical and even that of shallow dopant levels, possible. A comparative summary for the relevant spectroscopic features of the two capacitance methods are presented.

  11. Deep Inelastic Scattering at the Amplitude Level

    International Nuclear Information System (INIS)

    Brodsky, Stanley J.

    2005-01-01

    The deep inelastic lepton scattering and deeply virtual Compton scattering cross sections can be interpreted in terms of the fundamental wavefunctions defined by the light-front Fock expansion, thus allowing tests of QCD at the amplitude level. The AdS/CFT correspondence between gauge theory and string theory provides remarkable new insights into QCD, including a model for hadronic wavefunctions which display conformal scaling at short distances and color confinement at large distances

  12. Origin of the main deep electron trap in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1986-01-01

    The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

  13. Lithogenic fluxes to the deep Arabian Sea measurEd. by sediment traps

    Digital Repository Service at National Institute of Oceanography (India)

    Ramaswamy, V.; Nair, R.R; Manganini, S.J.; Haake, B.; Ittekkot, V.

    . 38. No. 2. pp 1~g-\\[~44 It,lqt. fllC~g...4)i49tql $31~) 4- 0.till Pnnted m Great Britain. ~ lg~t Pergamon Press pie Lithogenic fluxes to the deep Arabian Sea measured by sediment traps V. RAMASWAMY,* R. R. NAIR,* S. MANGANINI,# B. HAAKE~. and V... (MIct, lrdAN et al., 1984). Most of the present suspended sediment discharge is in July and August, during the peak of the southwest monsoon period, with negligible discharge during other times (I'rrEKKO'r and ARAIN, 1986). The Narmada and Tapti...

  14. Impact of proton irradiation on deep level states in n-GaN

    International Nuclear Information System (INIS)

    Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

    2013-01-01

    Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

  15. PC operated acoustic transient spectroscopy of deep levels in MIS structures

    International Nuclear Information System (INIS)

    Bury, P.; Jamnicky, I.

    1996-01-01

    A new version of acoustic deep-level transient spectroscopy is presented to study the traps at the insulator-semiconductor interface. The acoustic deep-level transient spectroscopy uses an acoustoelectric response signal produced by the MIS structure interface when a longitudinal acoustic wave propagates through a structure. The acoustoelectric response signal is extremely sensitive to external conditions of the structure and reflects any changes in the charge distribution, connected also with charged traps. In comparison with previous version of acoustic deep-level transient spectroscopy that closely coincides with the principle of the original deep-level transient spectroscopy technique, the present technique is based on the computer-evaluated isothermal transients and represents an improved, more efficient and time saving technique. Many tests on the software used for calculation as well as on experimental setup have been performed. The improved acoustic deep-level transient spectroscopy method has been applied for the Si(p) MIS structures. The deep-level parameters as activation energy and capture cross-section have been determined. (authors)

  16. Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2012-08-01

    Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

  17. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  18. Isotope analysis of water trapped in fluid inclusions in deep sea corals

    Science.gov (United States)

    Vonhof, Hubert; Reijmer, John; Feenstra, Eline; Mienis, Furu

    2015-04-01

    Extant Lophelia pertusa deep sea coral specimens from the Loachev mound region in the North Atlantic Ocean contain water filled fluid inclusions in their skeleton. This fluid inclusion water was extracted with a crushing device, and its hydrogen and oxygen isotope ratios analysed. The resulting data span a wide range of isotope values which are remarkably different from the seawater isotope composition of the sites studied. Comparison with food source isotope signatures suggests that coral inclusion water contains a high, but variable proportion of metabolic water. The isotope composition of the inclusion water appears to vary with the position on the deep see coral reef, and shows a correlation with the stable isotope composition of the coral aragonite. This correlation seems to suggest that growth rate and other ecological factors play an important role in determining the isotope composition of fluids trapped in the coral skeleton, which can potentially be developed as a proxy for non-equilibrium isotope fractionation observed in the aragonite skeleton of many of the common deep sea coral species.

  19. The Initial Rise Method in the case of multiple trapping levels

    International Nuclear Information System (INIS)

    Furetta, C.; Guzman, S.; Cruz Z, E.

    2009-10-01

    The aim of the paper is to extent the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to the minerals extracted from Nopal herb and Oregano spice because the thermoluminescent glow curves shape suggests a trap distribution instead of a single trapping level. (Author)

  20. The Initial Rise Method in the case of multiple trapping levels

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Guzman, S.; Cruz Z, E. [Instituto de Ciencias Nucleares, UNAM, A. P. 70-543, 04510 Mexico D. F. (Mexico)

    2009-10-15

    The aim of the paper is to extent the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to the minerals extracted from Nopal herb and Oregano spice because the thermoluminescent glow curves shape suggests a trap distribution instead of a single trapping level. (Author)

  1. Characteristics of Chinese petroleum geology. Geological features and exploration cases of stratigraphic, foreland and deep formation traps

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Chengzao [PetroChina Company Limited, Beijing (China)

    2012-07-01

    The first book of this subject in the recent 10 years. ''Characteristics of Chinese Petroleum Geology: Geological Features and Exploration Cases of Stratigraphic, Foreland and Deep Formation Traps'' systematically presents the progress made in petroleum geology in China and highlights the latest advances and achievements in oil/gas exploration and research, especially in stratigraphic, foreland and deep formation traps. The book is intended for researchers, practitioners and students working in petroleum geology, and is also an authoritative reference work for foreign petroleum exploration experts who want to learn more about this field in China.

  2. Deep levels in p-type InGaAsN lattice matched to GaAs

    International Nuclear Information System (INIS)

    Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

    1999-01-01

    Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

  3. Formation of neutrophil extracellular traps under low oxygen level

    Directory of Open Access Journals (Sweden)

    Katja Branitzki-Heinemann

    2016-11-01

    Full Text Available Since their discovery, neutrophil extracellular traps (NETs have been characterized as a fundamental host innate immune defense mechanism. Conversely, excessive NET release may have a variety of detrimental consequences for the host. A fine balance between NET formation and elimination is necessary to sustain a protective effect during an infectious challenge. Our own recently published data revealed that stabilization of hypoxia inducible factor 1α (HIF-1α by the iron chelating HIF-1α-agonist desferoxamine or AKB-4924 enhanced the release of phagocyte extracellular traps. Since HIF-1α is a global regulator of the cellular response to low oxygen, we hypothesized that NET formation may be similarly increased under low oxygen conditions. Hypoxia occurs in tissues during infection or inflammation, mostly due to overconsumption of oxygen by pathogens and recruited immune cells. Therefore, experiments were performed to characterize the formation of NETs under hypoxic oxygen conditions compared to normoxia. Human blood-derived neutrophils were isolated and incubated under normoxic (21% oxygen level and compared to hypoxic (1% conditions. Dissolved oxygen levels were monitored in the primary cell culture using a Fibox4-PSt3 measurement system. The formation of NETs was quantified by fluorescence microscopy in response to the known NET-inducer phorbol 12-myristate 13-acetate (PMA or S. aureus wildtype and a nuclease-deficient mutant. In contrast to our hypothesis, spontaneous NET formation of neutrophils incubated under hypoxia was distinctly reduced compared to control neutrophils incubated under normoxia. Furthermore, neutrophils incubated under hypoxia showed significantly reduced formation of NETs in response to PMA. Gene expression analysis revealed that mRNA level of hif-1α as well as hif-1α target genes was not altered. However, in good correlation to the decreased NET formation under hypoxia, the cholesterol content of the neutrophils was

  4. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    International Nuclear Information System (INIS)

    Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

    2005-01-01

    The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at E c -2.05 eV and a deep donor at E c -0.11 eV are newly reported states, and the latter is the first directly observed deep level attributed to the C Ga defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at E c -3.0 eV and E ν +0.9 eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at E c -3.0 and 3.28 eV had the largest concentration, implying that free-carrier compensation by these deep levels is responsible for the semi-insulating behavior of GaN:C:Si films grown by MBE. The differing manner by which C incorporation in GaN may impact electrical conductivity in films grown by MBE and metal-organic chemical-vapor deposition is discussed

  5. Spectroscopy of deep doping levels in Cd{sub 0.99}Mn{sub 0.01}Te:Ga; Spektroskopia glebokich poziomow domieszkowych w Cd{sub 0.99}Mn{sub 0.01}Te:Ga

    Energy Technology Data Exchange (ETDEWEB)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K. [Politechnika Wroclawska, Wroclaw (Poland); Bieg, B. [Wyzsza Szkola Morska, Szczecin (Poland)

    1997-12-01

    The investigation results of deep energy levels in Cd{sub 0.99}Mn{sub 0.01}Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab.

  6. Theoretical evaluation of matrix effects on trapped atomic levels

    International Nuclear Information System (INIS)

    Das, G.P.; Gruen, D.M.

    1986-06-01

    We suggest a theoretical model for calculating the matrix perturbation on the spectra of atoms trapped in rare gas systems. The model requires the ''potential curves'' of the diatomic system consisting of the trapped atom interacting with one from the matrix and relies on the approximation that the total matrix perturbation is a scalar sum of the pairwise interactions with each of the lattice sites. Calculations are presented for the prototype systems Na in Ar. Attempts are made to obtain ab initio estimates of the Jahn-Teller effects for excited states. Comparison is made with our recent Matrix-Isolation Spectroscopic (MIS) data. 10 refs., 3 tabs

  7. Extending the dose range: Probing deep traps in quartz with 3.06 eV photons

    DEFF Research Database (Denmark)

    Jain, Mayank

    2009-01-01

    stimulation. Although, the fast OSL component is measured with similar efficiency by blue and violet lights, the slower OSL components (especially S3) are measured relatively more efficiently with the latter. New insight into the origins of quartz luminescence is presented through a comparison of violet......This article demonstrates that violet (405 nm) stimulated luminescence (VSL) signal from quartz contains contribution from deep traps that are otherwise not accessible with blue light (470 nm). Additionally, it also contains the typical fast and slow components observed with the blue light...... and blue lights stimulation, and thermal stimulations. Finally, it is shown that the deep traps probed through violet light stimulation have potential for increasing the dose measurement/dating range using quartz. The post-blue VSL signal allows easy, precise measurement of dose up to at least 1 kGy in our...

  8. Magnetic field fluctuations analysis for the ion trap implementation of the quantum Rabi model in the deep strong coupling regime

    Science.gov (United States)

    Puebla, Ricardo; Casanova, Jorge; Plenio, Martin B.

    2018-03-01

    The dynamics of the quantum Rabi model (QRM) in the deep strong coupling regime is theoretically analyzed in a trapped-ion set-up. Recognizably, the main hallmark of this regime is the emergence of collapses and revivals, whose faithful observation is hindered under realistic magnetic dephasing noise. Here, we discuss how to attain a faithful implementation of the QRM in the deep strong coupling regime which is robust against magnetic field fluctuations and at the same time provides a large tunability of the simulated parameters. This is achieved by combining standing wave laser configuration with continuous dynamical decoupling. In addition, we study the role that amplitude fluctuations play to correctly attain the QRM using the proposed method. In this manner, the present work further supports the suitability of continuous dynamical decoupling techniques in trapped-ion settings to faithfully realize different interacting dynamics.

  9. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  10. Theoretical evaluation of matrix effects on trapped atomic levels

    Energy Technology Data Exchange (ETDEWEB)

    Das, G.P.; Gruen, D.M.

    1986-06-01

    We suggest a theoretical model for calculating the matrix perturbation on the spectra of atoms trapped in rare gas systems. The model requires the ''potential curves'' of the diatomic system consisting of the trapped atom interacting with one from the matrix and relies on the approximation that the total matrix perturbation is a scalar sum of the pairwise interactions with each of the lattice sites. Calculations are presented for the prototype systems Na in Ar. Attempts are made to obtain ab initio estimates of the Jahn-Teller effects for excited states. Comparison is made with our recent Matrix-Isolation Spectroscopic (MIS) data. 10 refs., 3 tabs.

  11. Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

    1984-05-01

    Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

  12. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  13. Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

    2016-01-01

    Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

  14. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

    Science.gov (United States)

    Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

    2017-12-01

    Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

  15. Vapor generation and atom traps: Atomic absorption spectrometry at the ng/L level

    International Nuclear Information System (INIS)

    Ataman, O. Yavuz

    2008-01-01

    Atom-trapping atomic absorption spectrometry is a technique that allows detection at the ng/L level for several analytes such as As, Se, Sb, Pb, Bi, Cd, In, Tl, Te, Sn and Hg. The principle involves generation of volatile species, usually hydrides, trapping these species on the surface of an atom trap held at an optimized temperature and, finally, revolatilizing the analyte species by rapid heating of the trap and transporting them in a carrier gas to a heated quartz tube, as commonly used with hydride generation AAS systems. A transient signal having, in most cases, a full width at half maximum of less than 1 s is obtained. The atom trap may be a quartz surface or a W-coil; the former is heated externally and the latter is heated resistively. Both collection and revolatilization temperatures are optimized. In some cases, the W-coil itself is used as an electrothermal atomizer and a heated quartz tube is then not needed. The evolution of these traps starts with the well-known Watling's slotted quartz tube (SQT), continues with atom trapping SQT and finally reaches the present traps mentioned above. The analytical figures of merit for these traps need to be standardized. Naturally, enhancement is on characteristic concentration, C 0 , where the change in characteristic mass, m 0 , can be related to trapping efficiency. Novel terms are suggested for E, enhancement factor; such as E max , maximum enhancement factor; E t , enhancement for 1.0 minute sampling and E v , enhancement for 1.0 mL of sample. These figures will allow easy comparison of results from different laboratories as well as different analytes and/or traps

  16. Vapor generation and atom traps: Atomic absorption spectrometry at the ng/L level

    Energy Technology Data Exchange (ETDEWEB)

    Ataman, O. Yavuz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)], E-mail: ataman@metu.edu.tr

    2008-08-15

    Atom-trapping atomic absorption spectrometry is a technique that allows detection at the ng/L level for several analytes such as As, Se, Sb, Pb, Bi, Cd, In, Tl, Te, Sn and Hg. The principle involves generation of volatile species, usually hydrides, trapping these species on the surface of an atom trap held at an optimized temperature and, finally, revolatilizing the analyte species by rapid heating of the trap and transporting them in a carrier gas to a heated quartz tube, as commonly used with hydride generation AAS systems. A transient signal having, in most cases, a full width at half maximum of less than 1 s is obtained. The atom trap may be a quartz surface or a W-coil; the former is heated externally and the latter is heated resistively. Both collection and revolatilization temperatures are optimized. In some cases, the W-coil itself is used as an electrothermal atomizer and a heated quartz tube is then not needed. The evolution of these traps starts with the well-known Watling's slotted quartz tube (SQT), continues with atom trapping SQT and finally reaches the present traps mentioned above. The analytical figures of merit for these traps need to be standardized. Naturally, enhancement is on characteristic concentration, C{sub 0}, where the change in characteristic mass, m{sub 0}, can be related to trapping efficiency. Novel terms are suggested for E, enhancement factor; such as E{sub max}, maximum enhancement factor; E{sub t}, enhancement for 1.0 minute sampling and E{sub v}, enhancement for 1.0 mL of sample. These figures will allow easy comparison of results from different laboratories as well as different analytes and/or traps.

  17. Inductively coupled plasma induced deep levels in epitaxial n-GaAs

    International Nuclear Information System (INIS)

    Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M.; Kolkovsky, Vl.; Botha, J.R.; Nyamhere, C.; Venter, A.

    2012-01-01

    The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E c —0.046 eV, E c —0.186 eV, E c —0.314 eV. E c —0.528 eV and E c —0.605 eV) were detected. The metastable defect E c —0.046 eV having a trap signature similar to E1 is observed for the first time. E c —0.314 eV and E c —0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

  18. The initial rise method extended to multiple trapping levels in thermoluminescent materials

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C. [CICATA-Legaria, Instituto Politecnico Nacional, 11500 Mexico D.F. (Mexico); Guzman, S. [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F. (Mexico); Ruiz, B. [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F. (Mexico); Departamento de Agricultura y Ganaderia, Universidad de Sonora, A.P. 305, 83190 Hermosillo, Sonora (Mexico); Cruz-Zaragoza, E., E-mail: ecruz@nucleares.unam.m [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F. (Mexico)

    2011-02-15

    The well known Initial Rise Method (IR) is commonly used to determine the activation energy when only one glow peak is presented and analysed in the phosphor materials. However, when the glow peak is more complex, a wide peak and some holders appear in the structure. The application of the Initial Rise Method is not valid because multiple trapping levels are considered and then the thermoluminescent analysis becomes difficult to perform. This paper shows the case of a complex glow curve structure as an example and shows that the calculation is also possible using the IR method. The aim of the paper is to extend the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to minerals extracted from Nopal cactus and Oregano spices because the thermoluminescent glow curve's shape suggests a trap distribution instead of a single trapping level.

  19. The initial rise method extended to multiple trapping levels in thermoluminescent materials.

    Science.gov (United States)

    Furetta, C; Guzmán, S; Ruiz, B; Cruz-Zaragoza, E

    2011-02-01

    The well known Initial Rise Method (IR) is commonly used to determine the activation energy when only one glow peak is presented and analysed in the phosphor materials. However, when the glow peak is more complex, a wide peak and some holders appear in the structure. The application of the Initial Rise Method is not valid because multiple trapping levels are considered and then the thermoluminescent analysis becomes difficult to perform. This paper shows the case of a complex glow curve structure as an example and shows that the calculation is also possible using the IR method. The aim of the paper is to extend the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to minerals extracted from Nopal cactus and Oregano spices because the thermoluminescent glow curve's shape suggests a trap distribution instead of a single trapping level. Copyright © 2010 Elsevier Ltd. All rights reserved.

  20. The initial rise method extended to multiple trapping levels in thermoluminescent materials

    International Nuclear Information System (INIS)

    Furetta, C.; Guzman, S.; Ruiz, B.; Cruz-Zaragoza, E.

    2011-01-01

    The well known Initial Rise Method (IR) is commonly used to determine the activation energy when only one glow peak is presented and analysed in the phosphor materials. However, when the glow peak is more complex, a wide peak and some holders appear in the structure. The application of the Initial Rise Method is not valid because multiple trapping levels are considered and then the thermoluminescent analysis becomes difficult to perform. This paper shows the case of a complex glow curve structure as an example and shows that the calculation is also possible using the IR method. The aim of the paper is to extend the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to minerals extracted from Nopal cactus and Oregano spices because the thermoluminescent glow curve's shape suggests a trap distribution instead of a single trapping level.

  1. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Fang, Z-Q.; Thompson, Phillip E.

    2003-01-01

    Deep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n + -p junctions using B doping for the p layer and p + -n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370 degree sign C, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1 (0.42-0.45 eV) and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600 degree sign C. It is hypothesized that these dominating electron traps are associated with pure divacancy defects and are independent of the dopant species

  2. Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

    International Nuclear Information System (INIS)

    Kolev, P.V.; Deen, J.

    1999-01-01

    The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). The authors have studied three groups of devices: commercially available-discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET's. CR-DLTS is similar to both the conductance DLTs and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors

  3. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    International Nuclear Information System (INIS)

    Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

    2000-01-01

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

  4. Quantifying levels of animal activity using camera trap data

    NARCIS (Netherlands)

    Rowcliffe, J.M.; Kays, R.; Kranstauber, B.; Carbone, C.; Jansen, P.A.

    2014-01-01

    1.Activity level (the proportion of time that animals spend active) is a behavioural and ecological metric that can provide an indicator of energetics, foraging effort and exposure to risk. However, activity level is poorly known for free-living animals because it is difficult to quantify activity

  5. Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

    Science.gov (United States)

    Peaker, A. R.; Markevich, V. P.; Coutinho, J.

    2018-04-01

    The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

  6. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Nyamhere, C.; Botha, J.R.; Venter, A.

    2011-01-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

  7. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-05-15

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

  8. Sub-mm Scale Fiber Guided Deep/Vacuum Ultra-Violet Optical Source for Trapped Mercury Ion Clocks

    Science.gov (United States)

    Yi, Lin; Burt, Eric A.; Huang, Shouhua; Tjoelker, Robert L.

    2013-01-01

    We demonstrate the functionality of a mercury capillary lamp with a diameter in the sub-mm range and deep ultraviolet (DUV)/ vacuum ultraviolet (VUV) radiation delivery via an optical fiber integrated with the capillary. DUV spectrum control is observed by varying the fabrication parameters such as buffer gas type and pressure, capillary diameter, electrical resonator design, and temperature. We also show spectroscopic data of the 199Hg+ hyper-fine transition at 40.5GHz when applying the above fiber optical design. We present efforts toward micro-plasma generation in hollow-core photonic crystal fiber with related optical design and theoretical estimations. This new approach towards a more practical DUV optical interface could benefit trapped ion clock developments for future ultra-stable frequency reference and time-keeping applications.

  9. The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

    Science.gov (United States)

    Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

    2006-01-01

    We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

  10. Deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

    2009-07-01

    Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

  11. Kinetics of light sum collection in solid dosemeters with several trapping levels

    International Nuclear Information System (INIS)

    Vlasov, V.K.; Tarasov, M.Yu.

    1983-01-01

    On the basis of a stochastic model of filling up the electron-hole capture centres following irradiation, the kinetics of light sum accumulation in crystallophosphors with any number of capture levels has been considered. Using as an example a crystallophosphor with two hole- and two electron capture centres, solution of equations for the kinetics of light sum accumulation in solid dosemeters is presented. It is shown that in the presence of two competing capture centres the filling-up of one of the traps is always described by the function with a bent and superlinear section, whereas the filling-up of the competing trap is described by the function without a bent. The dose-effect functional relationship for competing traps does not depend either on the energetic depth of the trap or absolute values of capture micro cross-sections, but depends solely on relative values of macro- and micro cross-sections for competing traps. The theoretical model has been checked when studying radiothermoluminescence of synthetic quartz. The experimental results are shown to agree well with the model suggested

  12. Study and microscopic characterization of the cadmium telluride deep levels

    International Nuclear Information System (INIS)

    Biglari, B.

    1989-05-01

    The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H + are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects [fr

  13. Advanced Quadrupole Ion Trap Instrumentation for Low Level Vehicle Emissions Measurements

    International Nuclear Information System (INIS)

    McLuckey, S.A.

    1997-01-01

    Quadrupole ion trap mass spectrometry has been evaluated for its potential use in vehicle emissions measurements in vehicle test facilities as an analyzer for the top 15 compounds contributing to smog generation. A variety of ionization methods were explored including ion trap in situ chemical ionization, atmospheric sampling glow discharge ionization, and nitric oxide chemical ionization in a glow discharge ionization source coupled with anion trap mass spectrometer. Emphasis was placed on the determination of hydrocarbons and oxygenated hydrocarbons at parts per million to parts per billion levels. Ion trap in situ water chemical ionization and atmospheric sampling glow discharge ionization were both shown to be amendable to the analysis of arenes, alcohols, aldehydes and, to some degree, alkenes. Atmospheric sampling glow discharge also generated molecular ions of methy-t-butyl ether (MTBE). Neither of these ionization methods, however, were found to generate diagnostic ions for the alkanes. Nitric oxide chemical ionization, on the other hand, was found to yield diagnostic ions for alkanes, alkenes, arenes, alcohols, aldehydes, and MTBE. The ability to measure a variety of hydrocarbons present at roughly 15 parts per billion at measurement rates of 3 Hz was demonstrated. All of the ions with potential to serve as parent ions in a tandem mass spectrometry experiment were found to yield parent-to-product conversion efficiencies greater than 75%. The flexibility afforded to the ion trap by use of tailored wave-forms applied to the end-caps allows parallel monitoring schemes to be devised that provide many of the advantages of tandem mass spectrometry without major loss in measurement rate. A large loss in measurement rate would ordinarily result from the use of conventional tandem mass spectrometry experiments carried out in series for a large number of targeted components. These results have demonstrated that the ion trap has an excellent combination of

  14. Numerical simulation of CO2 disposal by mineral trapping in deep aquifers

    International Nuclear Information System (INIS)

    Xu Tianfu; Apps, John A.; Pruess, Karsten

    2004-01-01

    Carbon dioxide disposal into deep aquifers is a potential means whereby atmospheric emissions of greenhouse gases may be reduced. However, our knowledge of the geohydrology, geochemistry, geophysics, and geomechanics of CO 2 disposal must be refined if this technology is to be implemented safely, efficiently, and predictably. As a prelude to a fully coupled treatment of physical and chemical effects of CO 2 injection, the authors have analyzed the impact of CO 2 immobilization through carbonate mineral precipitation. Batch reaction modeling of the geochemical evolution of 3 different aquifer mineral compositions in the presence of CO 2 at high pressure were performed. The modeling considered the following important factors affecting CO 2 sequestration: (1) the kinetics of chemical interactions between the host rock minerals and the aqueous phase, (2) CO 2 solubility dependence on pressure, temperature and salinity of the system, and (3) redox processes that could be important in deep subsurface environments. The geochemical evolution under CO 2 injection conditions was evaluated. In addition, changes in porosity were monitored during the simulations. Results indicate that CO 2 sequestration by matrix minerals varies considerably with rock type. Under favorable conditions the amount of CO 2 that may be sequestered by precipitation of secondary carbonates is comparable with and can be larger than the effect of CO 2 dissolution in pore waters. The precipitation of ankerite and siderite is sensitive to the rate of reduction of Fe(III) mineral precursors such as goethite or glauconite. The accumulation of carbonates in the rock matrix leads to a considerable decrease in porosity. This in turn adversely affects permeability and fluid flow in the aquifer. The numerical experiments described here provide useful insight into sequestration mechanisms, and their controlling geochemical conditions and parameters

  15. Deep subcritical levels measurements dependents upon kinetic distortion factors

    International Nuclear Information System (INIS)

    Pan Shibiao; Li Xiang; Fu Guo'en; Huang Liyuan; Mu Keliang

    2013-01-01

    The measurement of deep subcritical levels, with the increase of subcriticality, showed that the results impact on the kinetic distortion effect, along with neutron flux strongly deteriorated. Using the diffusion theory, calculations have been carried out to quantify the kinetic distortion correction factors in subcritical systems, and these indicate that epithermal neutron distributions are strongly affected by kinetic distortion. Subcriticality measurements in four different rod-state combination at the zero power device was carried out. The test data analysis shows that, with increasing subcriticality, kinetic distortion effect correction factor gradually increases from 1.052 to 1.065, corresponding reactive correction amount of 0.78β eff ∼ 3.01β eff . Thus, it is necessary to consider the kinetic distortion effect in the deep subcritical reactivity measurements. (authors)

  16. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  17. Separation and identification of picogram levels of dioxins and PCBs by GC/cryogenic trapping FTIR

    Science.gov (United States)

    Johnson, David J.; Powell, Jay R.; Krishnan, K.

    1994-01-01

    Capillary gas chromatography/mass spectrometry (GC/MS) has routinely been used by the analytical chemist to separate and identify low levels of environmentally important compounds. A GC/Cryogenic Trapping Fourier Transform Infrared Spectrometer (Tracer) provides the sensitivity of the GC/MS with the added capability of differentiating between compounds of the same mass. In this work, the Tracer was utilized to study low levels of six Polychlorinated Biphenyls (PCBs), eight Chlorinated Dibenzo-p-Doxins and Norflurazon. In all cases, picogram levels of these compounds were easily detected from `on the fly' generated IR chromatograms. Since the separated compounds eluting from the capillary column are cryogenically trapped onto a moving liquid nitrogen cooled ZnSe crystal, excellent signal-to- noise spectra of these same compounds may be collected after the run by returning to the same areas of deposition and signal averaging.

  18. Analysis of mineral trapping for CO{sub 2} disposal in deep aquifers

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Tianfu; Apps, John A.; Pruess, Karsten

    2001-07-20

    CO{sub 2} disposal into deep aquifers has been suggested as a potential means whereby atmospheric emissions of greenhouse gases may be reduced. However, our knowledge of the geohydrology, geochemistry, geophysics, and geomechanics of CO{sub 2} disposal must be refined if this technology is to be implemented safely, efficiently, and predictably. As a prelude to a fully coupled treatment of physical and chemical effects of CO{sub 2} injection, we have analyzed the impact of CO{sub 2} immobilization through carbonate precipitation. A survey of all major classes of rock-forming minerals, whose alteration would lead to carbonate precipitation, indicated that very few minerals are present in sufficient quantities in aquifer host rocks to permit significant sequestration of CO{sub 2}. We performed batch reaction modeling of the geochemical evolution of three different aquifer mineralogies in the presence of CO{sub 2} at high pressure. Our modeling considered (1) redox processes that could be important in deep subsurface environments, (2) the presence of organic matter, (3) the kinetics of chemical interactions between the host rock minerals and the aqueous phase, and (4) CO{sub 2} solubility dependence on pressure, temperature and salinity of the system. The geochemical evolution under both natural background and CO{sub 2} injection conditions was evaluated. In addition, changes in porosity were monitored during the simulations. Results indicate that CO{sub 2} sequestration by matrix minerals varies considerably with rock type. Under favorable conditions the amount of CO{sub 2} that may be sequestered by precipitation of secondary carbonates is comparable with and can be larger than the effect of CO{sub 2} dissolution in pore waters. The precipitation of ankerite and siderite is sensitive to the rate of reduction of ferric mineral precursors such as glauconite, which in turn is dependent on the reactivity of associated organic material. The accumulation of carbonates in

  19. Analysis of mineral trapping for CO(sub 2) disposal in deep aquifers; TOPICAL

    International Nuclear Information System (INIS)

    Xu, Tianfu; Apps, John A.; Pruess, Karsten

    2001-01-01

    CO(sub 2) disposal into deep aquifers has been suggested as a potential means whereby atmospheric emissions of greenhouse gases may be reduced. However, our knowledge of the geohydrology, geochemistry, geophysics, and geomechanics of CO(sub 2) disposal must be refined if this technology is to be implemented safely, efficiently, and predictably. As a prelude to a fully coupled treatment of physical and chemical effects of CO(sub 2) injection, we have analyzed the impact of CO(sub 2) immobilization through carbonate precipitation. A survey of all major classes of rock-forming minerals, whose alteration would lead to carbonate precipitation, indicated that very few minerals are present in sufficient quantities in aquifer host rocks to permit significant sequestration of CO(sub 2). We performed batch reaction modeling of the geochemical evolution of three different aquifer mineralogies in the presence of CO(sub 2) at high pressure. Our modeling considered (1) redox processes that could be important in deep subsurface environments, (2) the presence of organic matter, (3) the kinetics of chemical interactions between the host rock minerals and the aqueous phase, and (4) CO(sub 2) solubility dependence on pressure, temperature and salinity of the system. The geochemical evolution under both natural background and CO(sub 2) injection conditions was evaluated. In addition, changes in porosity were monitored during the simulations. Results indicate that CO(sub 2) sequestration by matrix minerals varies considerably with rock type. Under favorable conditions the amount of CO(sub 2) that may be sequestered by precipitation of secondary carbonates is comparable with and can be larger than the effect of CO(sub 2) dissolution in pore waters. The precipitation of ankerite and siderite is sensitive to the rate of reduction of ferric mineral precursors such as glauconite, which in turn is dependent on the reactivity of associated organic material. The accumulation of carbonates in

  20. Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

    Science.gov (United States)

    Dhar, S.; Das, U.; Bhattacharya, P. K.

    1986-01-01

    Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

  1. Multi-level deep supervised networks for retinal vessel segmentation.

    Science.gov (United States)

    Mo, Juan; Zhang, Lei

    2017-12-01

    Changes in the appearance of retinal blood vessels are an important indicator for various ophthalmologic and cardiovascular diseases, including diabetes, hypertension, arteriosclerosis, and choroidal neovascularization. Vessel segmentation from retinal images is very challenging because of low blood vessel contrast, intricate vessel topology, and the presence of pathologies such as microaneurysms and hemorrhages. To overcome these challenges, we propose a neural network-based method for vessel segmentation. A deep supervised fully convolutional network is developed by leveraging multi-level hierarchical features of the deep networks. To improve the discriminative capability of features in lower layers of the deep network and guide the gradient back propagation to overcome gradient vanishing, deep supervision with auxiliary classifiers is incorporated in some intermediate layers of the network. Moreover, the transferred knowledge learned from other domains is used to alleviate the issue of insufficient medical training data. The proposed approach does not rely on hand-crafted features and needs no problem-specific preprocessing or postprocessing, which reduces the impact of subjective factors. We evaluate the proposed method on three publicly available databases, the DRIVE, STARE, and CHASE_DB1 databases. Extensive experiments demonstrate that our approach achieves better or comparable performance to state-of-the-art methods with a much faster processing speed, making it suitable for real-world clinical applications. The results of cross-training experiments demonstrate its robustness with respect to the training set. The proposed approach segments retinal vessels accurately with a much faster processing speed and can be easily applied to other biomedical segmentation tasks.

  2. High-level radioactive waste disposal in the deep ocean

    International Nuclear Information System (INIS)

    Hill, H.W.

    1977-01-01

    A joint programme has begun between the Fisheries Laboratory, Lowestoft and the Institute of Oceanographic Sciences, Wormley to study the dispersion of radioactivity in the deep ocean arising from the possible dumping of high level waste on the sea bed in vitrified-glass form which would permit slow leakage over a long term scale. The programme consists firstly of the development of a simple diffusion/advection model for the dispersion of radioactivity in a closed and finite ocean, which overcomes many of the criticisms of the earlier model proposed by Webb and Morley. Preliminary results from this new model are comparable to those of the Webb-Morley model for radio isotopes with half-lives of 10-300 years but are considerably more restrictive outside this range, particularly for those which are much longer-lived. The second part of the programme, towards which the emphasis is directed, concerns the field programme planned to measure the advection and diffusion parameters in the deeper layers of the ocean to provide realistic input parameters to the model and increase our fundamental understanding of the environment in which the radioactive materials may be released. The first cruises of the programme will take place in late 1976 and involve deep current meter deployments and float dispersion experiments around the present NEA dump site with some sediment sampling, so that adsorption experiments can be started on typical deep sea sediments. The programme will expand the number of long-term deep moored stations over the next five years and include further float experiments, CTD profiling, and other physical oceanography. In the second half of the 5-year programme, attempts will be made to measure diffusion parameters in the deeper layers of the ocean using radioactive tracers

  3. Inductively coupled plasma induced deep levels in epitaxial n-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, Vl. [Technische Universitaet, Dresden, 01062 Dresden (Germany); Botha, J.R.; Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E{sub c}-0.046 eV, E{sub c}-0.186 eV, E{sub c}-0.314 eV. E{sub c}-0.528 eV and E{sub c}-0.605 eV) were detected. The metastable defect E{sub c}-0.046 eV having a trap signature similar to E1 is observed for the first time. E{sub c}-0.314 eV and E{sub c}-0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

  4. Deep impurity levels in n-type copper oxides

    International Nuclear Information System (INIS)

    Ovchinnikov, S.G.

    1994-01-01

    The density of Nd 2-x Ce x CuO 4 monoparticle states was calculated by the method of precise diagonalization of multielectron hamiltonian of 6-zone model for CuO cluster. Emergence of a deep impurity state of a symmetry in the middle of dielectric slit, which is a mixture of d z 2-states of copper and a 1 -molecular orbital of oxygen, is shown. Fluctuation of parameters of p-d jump and energies of charge transfer provide additional fine impurity levels near the bottom of conductivity zone and ceiling of valency zone. 30 refs., 4 figs

  5. Emission spectrum of a harmonically trapped Λ-type three-level atom

    International Nuclear Information System (INIS)

    Guo Hong; Tang Pei

    2013-01-01

    We theoretically investigate the emission spectrum for a Λ-type three-level atom trapped in the node of a standing wave. We show that the atomic center-of-mass motion not only directly affects the peak number, peak position, and peak height in the atomic emission spectrum, but also influences the effects of the cavity field and the atomic initial state on atomic emission spectrum. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  6. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    International Nuclear Information System (INIS)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2012-01-01

    Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  7. Human-level control through deep reinforcement learning

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-01

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  8. Human-level control through deep reinforcement learning.

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  9. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-06-15

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested.

  10. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su

    2016-01-01

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested

  11. Dynamics of the deep-level emission in ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

    2010-07-01

    Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

  12. Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

    International Nuclear Information System (INIS)

    Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

    2008-01-01

    Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

  13. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  14. Encoding arbitrary grey-level optical landscapes for trapping and manipulation using GPC

    DEFF Research Database (Denmark)

    Alonzo, Carlo Amadeo; Rodrigo, Peter John; Palima, Darwin

    2007-01-01

    With the aid of phase-only spatial light modulators (SLM), generalized phase contrast (GPC) has been applied with great success to the projection of binary light patterns through arbitrary-NA microscope objectives for real-time three-dimensional manipulation of microscopic particles. Here, we...... review the analysis of the GPC method with emphasis on efficiently producing speckle-free two-dimensional grey-level light Patterns. Numerical simulations are applied to construct 8-bit grey-level optical potential landscapes with high fidelity and optical throughput via the GPC method. Three types...... of patterns were constructed: geometric block patterns, multi-level optical trap arrays, and optical obstacle arrays. Non-periodic patterns were accurately projected with an average of 80% diffraction efficiency. Periodic patterns yielded even higher diffraction efficiencies, averaging 94%, by the utilization...

  15. Convolutional Neural Networks for Text Categorization: Shallow Word-level vs. Deep Character-level

    OpenAIRE

    Johnson, Rie; Zhang, Tong

    2016-01-01

    This paper reports the performances of shallow word-level convolutional neural networks (CNN), our earlier work (2015), on the eight datasets with relatively large training data that were used for testing the very deep character-level CNN in Conneau et al. (2016). Our findings are as follows. The shallow word-level CNNs achieve better error rates than the error rates reported in Conneau et al., though the results should be interpreted with some consideration due to the unique pre-processing o...

  16. Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

    Science.gov (United States)

    Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

    2018-05-16

    A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

  17. Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

    1996-03-01

    Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

  18. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  19. MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

  20. Dynamics of a trapped two-level and three-level atom interacting with classical electromagnetic field

    International Nuclear Information System (INIS)

    Ray, Aditi

    2004-01-01

    The dynamics of a two-level atom driven by a single laser beam and three-level atom (Lambda configuration) irradiated by two laser beams are studied taking into account of the quantized center-of-mass motion of the atom. It is shown that the trapped atom system under appropriate resonance condition exhibits the large time-scale revivals when the index of the vibrational sideband responsible for the atomic electronic transition is greater than unity. The revival times are shown to be dependent on the initial number of vibrational excitations and the magnitude of the Lamb-Dicke parameter. The sub-Poissonian statistics in vibrational quantum number is observed at certain time intervals. The minimum time of interaction for which the squeezed states of motional quadrature are generated is found to be decreasing with the increase in the Lamb-Dicke parameter

  1. Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

    International Nuclear Information System (INIS)

    Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

    2004-01-01

    N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

  2. Surface-Level Diversity and Decision-Making in Groups: When Does Deep-Level Similarity Help?

    OpenAIRE

    2006-01-01

    Abstract We examined how surface-level diversity (based on race) and deep-level similarities influenced three-person decision-making groups on a hidden-profile task. Surface-level homogeneous groups perceived their information to be less unique and spent less time on the task than surface-level diverse groups. When the groups were given the opportunity to learn about their deep-level similarities prior to t...

  3. Decadal trends in deep ocean salinity and regional effects on steric sea level

    Science.gov (United States)

    Purkey, S. G.; Llovel, W.

    2017-12-01

    We present deep (below 2000 m) and abyssal (below 4000 m) global ocean salinity trends from the 1990s through the 2010s and assess the role of deep salinity in local and global sea level budgets. Deep salinity trends are assessed using all deep basins with available full-depth, high-quality hydrographic section data that have been occupied two or more times since the 1980s through either the World Ocean Circulation Experiment (WOCE) Hydrographic Program or the Global Ship-Based Hydrographic Investigations Program (GO-SHIP). All salinity data is calibrated to standard seawater and any intercruise offsets applied. While the global mean deep halosteric contribution to sea level rise is close to zero (-0.017 +/- 0.023 mm/yr below 4000 m), there is a large regional variability with the southern deep basins becoming fresher and northern deep basins becoming more saline. This meridional gradient in the deep salinity trend reflects different mechanisms driving the deep salinity variability. The deep Southern Ocean is freshening owing to a recent increased flux of freshwater to the deep ocean. Outside of the Southern Ocean, the deep salinity and temperature changes are tied to isopycnal heave associated with a falling of deep isopycnals in recent decades. Therefore, regions of the ocean with a deep salinity minimum are experiencing both a halosteric contraction with a thermosteric expansion. While the thermosteric expansion is larger in most cases, in some regions the halosteric compensates for as much as 50% of the deep thermal expansion, making a significant contribution to local sea level rise budgets.

  4. Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells

    DEFF Research Database (Denmark)

    Jørgensen, Anders Michael; Clausen, Thomas; Leistiko, Otto

    1998-01-01

    62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol...

  5. The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

    Science.gov (United States)

    Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

    2018-05-01

    High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

  6. Using Deep Learning Techniques to Forecast Environmental Consumption Level

    Directory of Open Access Journals (Sweden)

    Donghyun Lee

    2017-10-01

    Full Text Available Artificial intelligence is a promising futuristic concept in the field of science and technology, and is widely used in new industries. The deep-learning technology leads to performance enhancement and generalization of artificial intelligence technology. The global leader in the field of information technology has declared its intention to utilize the deep-learning technology to solve environmental problems such as climate change, but few environmental applications have so far been developed. This study uses deep-learning technologies in the environmental field to predict the status of pro-environmental consumption. We predicted the pro-environmental consumption index based on Google search query data, using a recurrent neural network (RNN model. To verify the accuracy of the index, we compared the prediction accuracy of the RNN model with that of the ordinary least square and artificial neural network models. The RNN model predicts the pro-environmental consumption index better than any other model. We expect the RNN model to perform still better in a big data environment because the deep-learning technologies would be increasingly sophisticated as the volume of data grows. Moreover, the framework of this study could be useful in environmental forecasting to prevent damage caused by climate change.

  7. The calculation of deep levels in semiconductors by using a recursion method for super-cells

    International Nuclear Information System (INIS)

    Wong Yongliang.

    1987-01-01

    The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

  8. Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

    2015-05-01

    The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

  9. Discovery of deep and shallow trap states from step structures of rutile TiO2 vicinal surfaces by second harmonic and sum frequency generation spectroscopy

    International Nuclear Information System (INIS)

    Takahashi, Hiroaki; Watanabe, Ryosuke; Miyauchi, Yoshihiro; Mizutani, Goro

    2011-01-01

    In this report, local electronic structures of steps and terraces on rutile TiO 2 single crystal faces were studied by second harmonic and sum frequency generation (SHG/SFG) spectroscopy. We attained selective measurement of the local electronic states of the step bunches formed on the vicinal (17 18 1) and (15 13 0) surfaces using a recently developed step-selective probing technique. The electronic structures of the flat (110)-(1x1) (the terrace face of the vicinal surfaces) and (011)-(2x1) surfaces were also discussed. The SHG/SFG spectra showed that step structures are mainly responsible for the formation of trap states, since significant resonances from the trap states were observed only from the vicinal surfaces. We detected deep hole trap (DHT) states and shallow electron trap (SET) states selectively from the step bunches on the vicinal surfaces. Detailed analysis of the SHG/SFG spectra showed that the DHT and SET states are more likely to be induced at the top edges of the step bunches than on their hillsides. Unlike the SET states, the DHT states were observed only at the step bunches parallel to [1 1 1][equivalent to the step bunches formed on the (17 18 1) surface]. Photocatalytic activity for each TiO 2 sample was also measured through methylene blue photodegradation reactions and was found to follow the sequence: (110) < (17 18 1) < (15 13 0) < (011), indicating that steps along [0 0 1] are more reactive than steps along [1 1 1]. This result implies that the presence of the DHT states observed from the step bunches parallel to [1 1 1] did not effectively contribute to the methylene blue photodegradation reactions.

  10. Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

    Science.gov (United States)

    Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.

    2002-03-01

    Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.

  11. SU-F-T-318: Sensitivity and Stability of OSLDs with Filled Deep Electron/hole Traps Under Pre-Irradiation and Bleaching Conditions

    International Nuclear Information System (INIS)

    Kim, J; Park, S; Lee, H; Kim, H; Choi, C; Park, J

    2016-01-01

    Purpose: This work evaluated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps (OSLDfull) with the bleaching conditions according to the accumulated dose. Methods: The OSLDs were first pre-irradiated with a Co-60 gamma ray at more than 5 kGy, so as to fill the deep electron and hole traps. Using a 6-MV beam, the OSLDfull characteristics were investigated in terms of the full bleaching, fading, dose linearity, and dose sensitivity obtained in response to the accumulated dose values. To facilitate a comparison of the dose sensitivity, OSLDs with un-filled deep electron/hole traps (OSLDempty) were investigated in the same manner. A long-pass filter was used to exclude bleaching-source wavelengths of less than 520 nm. Various bleaching time and wavelength combinations were used in order to determine the optimal bleaching conditions for the OSLD full. Results: The fading for the OSLDfull exhibited stable signals after 8 min, for both 1- and 10-Gy. For 4-h bleaching time and an unfiltered bleaching device, the supralinear index values for the OSLDfull were 1.003, 1.002, 0.999, and 1.001 for doses of 2, 4, 7, and 10 Gy, respectively. For a 65-Gy accumulated dose with a 5-Gy fraction, no variation in dose sensitivity was obtained for the OSLDfull, within a standard deviation of 0.85%, whereas the OSLDempty dose sensitivity decreased by approximately 2.3% per 10 Gy. The filtered bleaching device yielded a highly stable sensitivity for OSLDfull, independent of bleaching time and within a standard deviation of 0.71%, whereas the OSLDempty dose sensitivity decreased by approximately 4.2% per 10 Gy for an accumulated dose of 25 Gy with a 5-Gy fraction. Conclusion: Under the bleaching conditions determined in this study, clinical dosimetry with OSLDfull is highly stable, having an accuracy of 1% with no change in dose sensitivity or linearity at clinical doses. This work was supported by a National Research

  12. Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

    Science.gov (United States)

    Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

    2008-01-01

    Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

  13. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  14. Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

    CERN Document Server

    Stahl, J; Lindström, G; Pintilie, I

    2003-01-01

    Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

  15. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Evtodiev, I. [Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of); Caraman, I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Leontie, L., E-mail: lleontie@uaic.ro [Alexandru Ioan Cuza University of Iasi, Bd. Carol I, Nr. 11, RO 700506 Iasi (Romania); Rusu, D.-I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Dafinei, A. [Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania); Nedeff, V.; Lazar, G. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  16. Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

    Science.gov (United States)

    Kumar, Sandeep; Kumar, Sugam; Katharria, Y S; Safvan, C P; Kanjilal, D

    2008-05-01

    A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

  17. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  18. Ar39 Detection at the 10-16 Isotopic Abundance Level with Atom Trap Trace Analysis

    Science.gov (United States)

    Jiang, W.; Williams, W.; Bailey, K.; Davis, A. M.; Hu, S.-M.; Lu, Z.-T.; O'Connor, T. P.; Purtschert, R.; Sturchio, N. C.; Sun, Y. R.; Mueller, P.

    2011-03-01

    Atom trap trace analysis, a laser-based atom counting method, has been applied to analyze atmospheric Ar39 (half-life=269yr), a cosmogenic isotope with an isotopic abundance of 8×10-16. In addition to the superior selectivity demonstrated in this work, the counting rate and efficiency of atom trap trace analysis have been improved by 2 orders of magnitude over prior results. The significant applications of this new analytical capability lie in radioisotope dating of ice and water samples and in the development of dark matter detectors.

  19. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

    International Nuclear Information System (INIS)

    Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2005-01-01

    Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

  20. Will the Effects of Sea-Level Rise Create Ecological Traps for Pacific Island Seabirds?

    Directory of Open Access Journals (Sweden)

    Michelle H Reynolds

    Full Text Available More than 18 million seabirds nest on 58 Pacific islands protected within vast U.S. Marine National Monuments (1.9 million km2. However, most of these seabird colonies are on low-elevation islands and sea-level rise (SLR and accompanying high-water perturbations are predicted to escalate with climate change. To understand how SLR may impact protected islands and insular biodiversity, we modeled inundation and wave-driven flooding of a globally important seabird rookery in the subtropical Pacific. We acquired new high-resolution Digital Elevation Models (DEMs and used the Delft3D wave model and ArcGIS to model wave heights and inundation for a range of SLR scenarios (+0.5, +1.0, +1.5, and +2.0 m at Midway Atoll. Next, we classified vegetation to delineate habitat exposure to inundation and identified how breeding phenology, colony synchrony, and life history traits affect species-specific sensitivity. We identified 3 of 13 species as highly vulnerable to SLR in the Hawaiian Islands and quantified their atoll-wide distribution (Laysan albatross, Phoebastria immutabilis; black-footed albatross, P. nigripes; and Bonin petrel, Pterodroma hypoleuca. Our models of wave-driven flooding forecast nest losses up to 10% greater than passive inundation models at +1.0 m SLR. At projections of + 2.0 m SLR, approximately 60% of albatross and 44% of Bonin petrel nests were overwashed displacing more than 616,400 breeding albatrosses and petrels. Habitat loss due to passive SLR may decrease the carrying capacity of some islands to support seabird colonies, while sudden high-water events directly reduce survival and reproduction. This is the first study to simulate wave-driven flooding and the combined impacts of SLR, groundwater rise, and storm waves on seabird colonies. Our results highlight the need for early climate change planning and restoration of higher elevation seabird refugia to prevent low-lying protected islands from becoming ecological traps in the

  1. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  2. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    International Nuclear Information System (INIS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-01-01

    Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

  3. La modified TiO{sub 2} photoanode and its effect on DSSC performance: A comparative study of doping and surface treatment on deep and surface charge trapping

    Energy Technology Data Exchange (ETDEWEB)

    Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Ekanayake, Piyasiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Centre for Advanced Material and Energy Sciences (CAMES), Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Maroochydore DC, Queensland, 4558 (Australia); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

    2016-04-01

    The effect of Lanthanum ions (La{sup 3+}) on charge trapping in dye-sensitized solar cell (DSSC) photoanodes has been investigated with doped and surface-treated TiO{sub 2} nanoparticles. Doped nanoparticles consisting of 0.5 mol.% Mg and La co-doped TiO{sub 2}, 0.5 mol.% Mg doped TiO{sub 2} and pure TiO{sub 2} were synthesized by the sol gel method. Surface-treated nanoparticles of Mg doped TiO{sub 2} and pure TiO{sub 2} were prepared by ball milling in 0.05 M aqueous La{sup 3+} solution. All materials were analyzed by XRD, XPS and UV–Vis DRS. Cell performance, surface free energy state changes and electron injection efficiency of DSSCs based on these nanoparticles were evaluated using current –voltage measurements, EIS and Incident photon to current conversion efficiency. Doped materials had La and Mg ions incorporated into the TiO{sub 2} lattice, while no lattice changes were observed for the surface-treated materials. Less visible light was absorbed by treated oxides compared with doped oxide samples. The overall power conversion efficiencies (PCE) of DSSC photoanodes based on doped materials were twice those of photoanodes fabricated from treated nanoparticles. Doping establishes deep traps that reduce the recombination of electron–hole (e–h) pairs. Conversely, the presence of absorbed oxygen in treated materials enhances e–h recombination with electrolyte at surface trap sites. - Highlights: • DSSC performance is investigated using photoanodes of doped and La{sup 3+} surface treated TiO{sub 2}. • TiO{sub 2} and Mg–TiO{sub 2} treated with La{sup 3+} absorbed less visible light. • A high concentration of absorbed oxygen on surface treated oxides reduced band bending. • Increased surface free energy in the modified DSSC anodes is caused more by Mg{sup 2+} at Ti{sup 4+} than by La{sup 3+} at the surfaces. • Near surface charge traps due to La{sup 3+} treatment promotes e–h recombination.

  4. Variation of interface trap level charge density within the bandgap of ...

    Indian Academy of Sciences (India)

    Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), ... Experimental details of the sample preparation, fabrication .... gives the true evidence of interface trap density at the interface of SiO2/SiC. On the ...

  5. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chasin, Adrian, E-mail: adrian.chasin@imec.be; Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul [imec, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium); Simoen, Eddy [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Gielen, Georges [ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  6. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

    OpenAIRE

    Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

    2016-01-01

    InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

  7. A deep level set method for image segmentation

    OpenAIRE

    Tang, Min; Valipour, Sepehr; Zhang, Zichen Vincent; Cobzas, Dana; MartinJagersand

    2017-01-01

    This paper proposes a novel image segmentation approachthat integrates fully convolutional networks (FCNs) with a level setmodel. Compared with a FCN, the integrated method can incorporatesmoothing and prior information to achieve an accurate segmentation.Furthermore, different than using the level set model as a post-processingtool, we integrate it into the training phase to fine-tune the FCN. Thisallows the use of unlabeled data during training in a semi-supervisedsetting. Using two types o...

  8. Measurements and characterization of a hole trap in neutron-irradiated silicon

    International Nuclear Information System (INIS)

    Avset, B.S.

    1996-04-01

    The report describes measurements on a hole trap in neutron irradiated silicon diodes made one high resistivity phosphorus doped floatzone silicon. The hole trap was detected by Deep Level Transient Spectroscopy. This measurement gave a trap activation energy of 0.475 MeV. Other measurements showed that the trap has very small capture cross sections for both holes and electrons (10 -18 to 10 -20 cm 2 ) and that the hole capture cross section is temperature dependent. The energy level position of the trap has been estimated to be between 0.25 and 0.29 eV from the valence band. 25 refs., 21 figs., 4 tabs

  9. Information entropy of a time-dependent three-level trapped ion interacting with a laser field

    International Nuclear Information System (INIS)

    Abdel-Aty, Mahmoud

    2005-01-01

    Trapped and laser-cooled ions are increasingly used for a variety of modern high-precision experiments, frequency standard applications and quantum information processing. Therefore, in this communication we present a comprehensive analysis of the pattern of information entropy arising in the time evolution of an ion interacting with a laser field. A general analytic approach is proposed for a three-level trapped-ion system in the presence of the time-dependent couplings. By working out an exact analytic solution, we conclusively analyse the general properties of the von Neumann entropy and quantum information entropy. It is shown that the information entropy is affected strongly by the time-dependent coupling and exhibits long time periodic oscillations. This feature attributed to the fact that in the time-dependent region Rabi oscillation is time dependent. Using parameters corresponding to a specific three-level ionic system, a single beryllium ion in a RF-(Paul) trap, we obtain illustrative examples of some novel aspects of this system in the dynamical evolution. Our results establish an explicit relation between the exact information entropy and the entanglement between the multi-level ion and the laser field. We show that different nonclassical effects arise in the dynamics of the ionic population inversion, depending on the initial states of the vibrational motion/field and on the values of Lamb-Dicke parameter η

  10. Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions

    NARCIS (Netherlands)

    Nanu, M.; Boulch, F.; Schoonman, J.; Goossens, A.

    2005-01-01

    Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to

  11. Economic injury level for the coffee berry borer (Coleoptera: Curculionidae: Scolytinae) using attractive traps in Brazilian coffee fields.

    Science.gov (United States)

    Fernandes, F L; Picanço, M C; Campos, S O; Bastos, C S; Chediak, M; Guedes, R N C; Silva, R S

    2011-12-01

    The currently existing sample procedures available for decision-making regarding the control of the coffee berry borer Hypothenemus hampei (Ferrari) (Coleoptera: Curculionidae: Scolytinae) are time-consuming, expensive, and difficult to perform, compromising their adoption. In addition, the damage functions incorporated in such decision levels only consider the quantitative losses, while dismissing the qualitative losses. Traps containing ethanol, methanol, and benzaldehyde may allow cheap and easy decision-making. Our objective was to determine the economic injury level (EIL) for the adults of the coffee berry borer by using attractant-baited traps. We considered both qualitative and quantitative losses caused by the coffee borer in estimating the EILs. These EILs were determined for conventional and organic coffee under high and average plant yield. When the quantitative losses caused by H. hampei were considered alone, the EILs ranged from 7.9 to 23.7% of bored berries for high and average-yield conventional crops, respectively. For high and average-yield organic coffee the ELs varied from 24.4 to 47.6% of bored berries, respectively. When qualitative and quantitative losses caused by the pest were considered together, the EIL was 4.3% of bored berries for both conventional and organic coffee. The EILs for H. hampei associated to the coffee plants in the flowering, pinhead fruit, and ripening fruit stages were 426, 85, and 28 adults per attractive trap, respectively.

  12. The Effects of Test Anxiety on Learning at Superficial and Deep Levels of Processing.

    Science.gov (United States)

    Weinstein, Claire E.; And Others

    1982-01-01

    Using a deep-level processing strategy, low test-anxious college students performed significantly better than high test-anxious students in learning a paired-associate word list. Using a superficial-level processing strategy resulted in no significant difference in performance. A cognitive-attentional theory and test anxiety mechanisms are…

  13. Ar-39 Detection at the 10^-16 Isotopic Abundance Level with Atom Trap Trace Analysis

    OpenAIRE

    Jiang, W.; Williams, W. D.; Bailey, K.; Davis, A. M.; Hu, S. -M.; Lu, Z. -T.; O'Connor, T. P.; Purtschert, R.; Sturchio, N. C.; Sun, Y. R.; Mueller, P.

    2011-01-01

    Atom Trap Trace Analysis (ATTA), a laser-based atom counting method, has been applied to analyze atmospheric Ar-39 (half-life = 269 yr), a cosmogenic isotope with an isotopic abundance of 8x10^-16. In addition to the superior selectivity demonstrated in this work, counting rate and efficiency of ATTA have been improved by two orders of magnitude over prior results. Significant applications of this new analytical capability lie in radioisotope dating of ice and water samples and in the develop...

  14. Enhanced quantum sensing with multi-level structures of trapped ions

    DEFF Research Database (Denmark)

    Aharon, N.; Drewsen, Michael; Retzker, A.

    2017-01-01

    , robustness to both external and controller noise is achieved. We consider trapped-ion based implementation via the dipole transitions, which is relevant for several types of ions, such as the $^{40}{\\rm{Ca}}^{+}$, $^{88}{\\rm{Sr}}^{+}$, and the $^{138}{\\rm{Ba}}^{+}$ ions. Taking experimental errors...... of magnitude of the sensitivity. In addition, we present a microwave based sensing scheme that is suitable for ions with a hyperfine structure, such as the $^{9}{\\rm{Be}}^{+}$,$^{25}{\\rm{Mg}}^{+}$,$^{43}{\\rm{Ca}}^{+}$,$^{87}{\\rm{Sr}}^{+}$,$^{137}{\\rm{Ba}}^{+}$,$^{111}{\\rm{Cd}}^{+}$,$^{171}{\\rm...

  15. Metastable self-trapping of positrons in MgO

    Science.gov (United States)

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1997-01-01

    Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

  16. Stability of Trapped Electrons in SiO(2)

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.

    1999-01-01

    Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

  17. Study of formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors.

    Science.gov (United States)

    Dubey, Vikas; Kaur, Jagjeet; Parganiha, Yogita; Suryanarayana, N S; Murthy, K V R

    2016-04-01

    This paper reports the thermoluminescence properties of Eu(3+) doped different host matrix phosphors (SrY2O4 and Y4Al2O9). The phosphor is prepared by high temperature solid state reaction method. The method is suitable for large scale production and fixed concentration of boric acid using as a flux. The prepared samples were characterized by X-ray diffraction technique and the crystallite size calculated by Scherer's formula. The prepared phosphor characterized by Scanning Electron Microscopic (SEM), Fourier Transform Infrared (FTIR), Energy Dispersive X-ray analysis (EDX), thermoluminescence (TL) and Transmission Electron Microscopic (TEM) techniques. The prepared phosphors for different concentration of Eu(3+) ions were examined by TL glow curve for UV, beta and gamma irradiation. The UV 254nm source used for UV irradiation, Sr(90) source was used for beta irradiation and Co(60) source used for gamma irradiation. SrY2O4:Eu(3+)and Y4Al2O9:Eu(3+) phosphors which shows both higher temperature peaks and lower temperature peaks for UV, beta and gamma irradiation. Here UV irradiated sample shows the formation of shallow trap (surface trapping) and the gamma irradiated sample shows the formation of deep trapping. The estimation of trap formation was evaluated by knowledge of trapping parameters. The trapping parameters such as activation energy, order of kinetics and frequency factor were calculated by peak shape method. Here most of the peak shows second order of kinetics. The effect of gamma, beta and UV exposure on TL studies was also examined and it shows linear response with dose which indicate that the samples may be useful for TL dosimetry. Formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors is discussed in this paper. Copyright © 2015 Elsevier Ltd. All rights reserved.

  18. Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics

    Science.gov (United States)

    Beling, C. D.; Fung, S.; Au, H. L.; Ling, C. C.; Reddy, C. V.; Deng, A. H.; Panda, B. K.

    1997-05-01

    Recent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 10 6 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.

  19. Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

    2012-01-01

    Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

  20. Deep geologic repository for low and intermediate radioactive level waste in Canada

    International Nuclear Information System (INIS)

    Liu Jianqin; Li Honghui; Sun Qinghong; Yang Zhongtian

    2012-01-01

    Ontario Power Generation (OPG) is undergoing a project for the long-term management of low and intermediate level waste (LILW)-a deep geologic repository (DGR) project for low and intermediate level waste. The waste source term disposed, geologic setting, repository layout and operation, and safety assessment are discussed. It is expected to provide reference for disposal of low and intermediate level waste that contain the higher concentration of long-lived radionuclides in China. (authors)

  1. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

  2. Characterization of deep energy levels in mercury iodide. Application to nuclear detection

    International Nuclear Information System (INIS)

    Mohammed Brahim, Tayeb.

    1982-07-01

    The last few years have seen an increasing interest in HgI 2 detectors for room temperature gamma and X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels has been performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques and the polarization phenomena observed in nuclear detection in both vapor phase and solution grown crystals. For the latter, polarization can be eliminated or notably reduced by illumination of the positive electrode or by using a MIS positively biased structure [fr

  3. Hydrogenation of the ``new oxygen donor'' traps in silicon

    Science.gov (United States)

    Hölzlein, K.; Pensl, G.; Schulz, M.; Johnson, N. M.

    1986-04-01

    Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski-grown Si samples that contained high concentrations of the oxygen-related ``new donor'' (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ``SiOx interface'' model for the ND defects.

  4. A study of ion implanted gallium arsenide using deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Emerson, N.G.

    1981-03-01

    This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

  5. Deep geologic storage of high level radioactive wastes: conceptual generic designs

    International Nuclear Information System (INIS)

    1995-01-01

    This report summarizes the studies on deep geologic storage of radioactive wastes and specially for the high-level radioactive wastes. The study is focussed to the geotechnical assessment and generic-conceptual designs. Methodology analysis, geotechnical feasibility, costs and operation are studied

  6. Iron and intrinsic deep level states in Ga2O3

    Science.gov (United States)

    Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstübner, U.; Vines, L.

    2018-01-01

    Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ˜0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

  7. A Closer Look at Deep Learning Neural Networks with Low-level Spectral Periodicity Features

    DEFF Research Database (Denmark)

    Sturm, Bob L.; Kereliuk, Corey; Pikrakis, Aggelos

    2014-01-01

    Systems built using deep learning neural networks trained on low-level spectral periodicity features (DeSPerF) reproduced the most “ground truth” of the systems submitted to the MIREX 2013 task, “Audio Latin Genre Classification.” To answer why this was the case, we take a closer look...

  8. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad; El Amin, Mohamed F.; Sun, Shuyu

    2015-01-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since

  9. Plan of deep underground construction for investigations on high-level radioactive waste storage

    International Nuclear Information System (INIS)

    Mayanovskij, M.S.

    1996-01-01

    The program of studies of the Japanese PNC corporation on construction of deep underground storage for high-level radioactive wastes is presented. The program is intended for 20 years. The total construction costs equal about 20 billion yen. The total cost of the project is equal to 60 billion yen. The underground part is planned to reach 1000 m depth

  10. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1994-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  11. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

    DEFF Research Database (Denmark)

    Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

    2009-01-01

     During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

  12. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1993-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  13. Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

    Directory of Open Access Journals (Sweden)

    I. I. Kurkina

    2012-09-01

    Full Text Available The charge deep-level transient spectroscopy (Q-DLTS is applied to the study of the dislocation-rich Si layers grown on a surface composed of dense arrays of Ge islands prepared on the oxidized Si surface. This provides revealing three deep-level bands located at EV + 0.31 eV, EC – 0.35 eV and EC – 0.43 eV using the stripe-shaped p-i-n diodes fabricated on the basis of these layers. The most interesting observation is the local state recharging process which proceeds with low activation energy (∼50 meV or without activation. The recharging may occur by carrier tunneling within deep-level bands owing to the high dislocation density ∼ 1011 - 1012 cm-2. This result is in favor of the suggestion on the presence of carrier transport between the deep states, which was previously derived from the excitation dependence of photoluminescence (PL intensity. Electroluminescence (EL spectra measured from the stripe edge of the same diodes contain two peaks centered near 1.32 and 1.55 μm. Comparison with PL spectra indicates that the EL peaks are generated from arsenic-contaminated and pure areas of the layers, respectively.

  14. Damage related deep electron levels in ion implanted GaAs

    International Nuclear Information System (INIS)

    Allsopp, D.W.E.; Peaker, A.R.

    1986-01-01

    A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

  15. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  16. High levels of natural radionuclides in a deep-sea infaunal xenophyophore

    Energy Technology Data Exchange (ETDEWEB)

    Swinbanks, D D; Shirayama, Y

    1986-03-27

    The paper concerns the high levels of natural radionuclides in a deep-sea infaunal xenophyophore from the Izu-Ogasawara Trench. Measured /sup 210/Po activities and barium contents of various parts of Occultammina profunda and the surrounding sediment are given, together with their estimated /sup 210/Pb and /sup 226/Ra activities. The data suggest that xenophyphores are probably subject to unusually high levels of natural radiation.

  17. Soliton Trains Induced by Adaptive Shaping with Periodic Traps in Four-Level Ultracold Atom Systems

    International Nuclear Information System (INIS)

    Djouom Tchenkoue, M. L.; Welakuh Mbangheku, D.; Dikandé, Alain M.

    2017-01-01

    It is well known that an optical trap can be imprinted by a light field in an ultracold-atom system embedded in an optical cavity, and driven by three different coherent fields. Of the three fields coexisting in the optical cavity there is an intense control field that induces a giant Kerr nonlinearity via electromagnetically-induced transparency, and another field that creates a periodic optical grating of strength proportional to the square of the associated Rabi frequency. In this work elliptic-soliton solutions to the nonlinear equation governing the propagation of the probe field are considered, with emphasis on the possible generation of optical soliton trains forming a discrete spectrum with well defined quantum numbers. The problem is treated assuming two distinct types of periodic optical gratings and taking into account the negative and positive signs of detunings (detuning above or below resonance). Results predict that the competition between the self-phase and cross-phase modulation nonlinearities gives rise to a rich family of temporal soliton train modes characterized by distinct quantum numbers. (paper)

  18. Soliton Trains Induced by Adaptive Shaping with Periodic Traps in Four-Level Ultracold Atom Systems

    Science.gov (United States)

    Djouom Tchenkoue, M. L.; Welakuh Mbangheku, D.; Dikandé, Alain M.

    2017-06-01

    It is well known that an optical trap can be imprinted by a light field in an ultracold-atom system embedded in an optical cavity, and driven by three different coherent fields. Of the three fields coexisting in the optical cavity there is an intense control field that induces a giant Kerr nonlinearity via electromagnetically-induced transparency, and another field that creates a periodic optical grating of strength proportional to the square of the associated Rabi frequency. In this work elliptic-soliton solutions to the nonlinear equation governing the propagation of the probe field are considered, with emphasis on the possible generation of optical soliton trains forming a discrete spectrum with well defined quantum numbers. The problem is treated assuming two distinct types of periodic optical gratings and taking into account the negative and positive signs of detunings (detuning above or below resonance). Results predict that the competition between the self-phase and cross-phase modulation nonlinearities gives rise to a rich family of temporal soliton train modes characterized by distinct quantum numbers.

  19. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  20. Lack of mutagens in deep-fat-fried foods obtained at the retail level.

    Science.gov (United States)

    Taylor, S L; Berg, C M; Shoptaugh, N H; Scott, V N

    1982-04-01

    The basic methylene chloride extract from 20 of 30 samples of foods fried in deep fat failed to elicit any mutagenic response that could be detected in the Salmonella typhimurium/mammalian microsome assay. The basic extracts of the remaining ten samples (all three chicken samples studied, two of the four potato-chip samples, one of four corn-chip samples, the sample of onion rings, two of six doughnuts, and one of three samples of french-fried potato) showed evidence of weak mutagenic activity. In these samples, amounts of the basic extract equivalent to 28.5-57 g of the original food sample were required to produce revertants at levels of 2.6-4.8 times the background level. Only two of the acidic methylene chloride extracts from the 30 samples exhibited mutagenic activity greater than 2.5 times the background reversion level, and in both cases (one corn-chip and one shrimp sample) the mutagenic response was quite weak. The basic extract of hamburgers fried in deep fat in a home-style fryer possessed higher levels of mutagenic activity (13 times the background reversion level). However, the mutagenic activity of deep-fried hamburgers is some four times lower than that of pan-fried hamburgers.

  1. Reference design and operations for deep borehole disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-01-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  2. Reference design and operations for deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-10-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  3. Formation of Deep Electron Trap by Yb3+ Codoping Leads into Super-Long Persistent Luminescence in Ce3+-doped Yttrium Aluminum Gallium Garnet Phosphors.

    Science.gov (United States)

    Ueda, Jumpei; Miyano, Shun; Tanabe, Setsuhisa

    2018-05-23

    The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Cr 3+ compound is one of the brightest persistent phosphors, but its persistent luminescence (PersL) duration is not so long due to the relatively shallow Cr 3+ electron trap. Comparing the vacuum referred binding energy of the electron trapping state by Cr 3+ and those by lanthanide ions, we selected Yb 3+ as a deeper electron trapping center. The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Yb 3+ phosphors show Ce 3+ :5d→4f green persistent luminescence after ceasing blue light excitation. The formation of Yb 2+ was confirmed by the increased intensity of absorption at 585 nm during the charging process. This result indicates that the Yb 3+ ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found the Yb 3+ trap makes much deeper electron trap with 1.01 eV depth than the Cr 3+ electron trap with 0.81 eV depth. This deeper Yb 3+ trap provides much slower detrapping rate of filled electron traps than the Cr 3+ -codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce 3+ and Yb 3+ concentrations, the Y 3 Al 2 Ga 3 O 12 :Ce 3+ (0.2%)-Yb 3+ (0.1%) as-made transparent ceramic phosphor showed super long persistent luminescence for over 138.8 hours after ceasing blue light charging.

  4. Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Scharager, C.; Muller, J.C.; Stuck, R.; Siffert, P.

    1975-01-01

    Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 10 7 ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated [fr

  5. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  6. Encoding arbitrary grey-level optical landscapes for trapping and manipulation using GPC

    DEFF Research Database (Denmark)

    Alonzo, Carlo Amadeo; Rodrigo, Peter John; Palima, Darwin

    2007-01-01

    review the analysis of the GPC method with emphasis on efficiently producing speckle-free two-dimensional grey-level light Patterns. Numerical simulations are applied to construct 8-bit grey-level optical potential landscapes with high fidelity and optical throughput via the GPC method. Three types...

  7. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    International Nuclear Information System (INIS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-01-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  8. Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

    Science.gov (United States)

    Pang, Bo; Becker, Frank

    2017-04-28

    Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  9. Electrical and optical deep level spectroscopy on Os doped p-InP

    International Nuclear Information System (INIS)

    Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

    1997-01-01

    Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

  10. Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

    International Nuclear Information System (INIS)

    Hammadeh, H.; Darwich, R.

    2005-03-01

    The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

  11. Effects of heat from high-level waste on performance of deep geological repository components

    International Nuclear Information System (INIS)

    1984-11-01

    This report discusses the effects of heat on the deep geological repository systems and its different components. The report is focussed specifically on effects due to thermal energy release solely from high-level waste or spent fuel. It reviews the experimental data and theoretical models of the effects of heat both on the behaviour of engineered and natural barriers. A summary of the current status of research and repository development including underground test facilities is presented

  12. Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

    International Nuclear Information System (INIS)

    Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

    2012-01-01

    Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

  13. Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

    Science.gov (United States)

    Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

    2012-01-01

    Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

  14. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    Pettersson, H.

    1993-01-01

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  15. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Li, Baikui; Tang, Xi; Chen, Kevin J.

    2015-01-01

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

  16. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-03-02

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

  17. Multi-level gene/MiRNA feature selection using deep belief nets and active learning.

    Science.gov (United States)

    Ibrahim, Rania; Yousri, Noha A; Ismail, Mohamed A; El-Makky, Nagwa M

    2014-01-01

    Selecting the most discriminative genes/miRNAs has been raised as an important task in bioinformatics to enhance disease classifiers and to mitigate the dimensionality curse problem. Original feature selection methods choose genes/miRNAs based on their individual features regardless of how they perform together. Considering group features instead of individual ones provides a better view for selecting the most informative genes/miRNAs. Recently, deep learning has proven its ability in representing the data in multiple levels of abstraction, allowing for better discrimination between different classes. However, the idea of using deep learning for feature selection is not widely used in the bioinformatics field yet. In this paper, a novel multi-level feature selection approach named MLFS is proposed for selecting genes/miRNAs based on expression profiles. The approach is based on both deep and active learning. Moreover, an extension to use the technique for miRNAs is presented by considering the biological relation between miRNAs and genes. Experimental results show that the approach was able to outperform classical feature selection methods in hepatocellular carcinoma (HCC) by 9%, lung cancer by 6% and breast cancer by around 10% in F1-measure. Results also show the enhancement in F1-measure of our approach over recently related work in [1] and [2].

  18. Large lattice relaxation deep levels in neutron-irradiated GaN

    International Nuclear Information System (INIS)

    Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

    2005-01-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out

  19. Using the C-V curve of an mis diode to examine the trapping levels in a semiconductor containing many discrete traps

    Science.gov (United States)

    Cook, R. K.; Kasold, J. P.; Jones, K. A.

    1980-04-01

    It is shown that the trap concentrations and depths can be obtained from the slopes of the ( C/ ci) 2 vs VG curves and the change in ( C/ Ci) 2 at the transition points for an MIS diode, and that this method is particularly applicable to single type semiconductors such as CdS. This is done by developing equations using the abrupt depletion layer model. In this paper the equations are derived, they are used to determine the ideal C-V curves of copper doped CdS, and then they are used to analyze C-V curves of gold doped silicon. Equations are also derived that predict how the C-V curve will be affected when the depletion layer punches through a doped layer, and calculations are made for copper doped CdS.

  20. The study of the deep levels of In/CdTe Schottky diode

    International Nuclear Information System (INIS)

    Kim, Hey-kyeong; Jeen, Gwangsoo; Nam, S.H.

    2000-01-01

    p-type CdTe is an important component of II-VI compound based solar cells as well as a promising substance for X- and gamma-ray detector. Despite that a lot of researches has been performed on CdTe, the manufacture of large homogeneous ingots with high resistivity (ρ) and a high value of lifetime-mobility product (μτ) still difficult. Both ρ and μτ, which determine detection properties, are strongly dependent on the impurity and defect levels of crystals. As in general, deep defect levels act as recombination centers and influence strongly the efficiency of the detector material, so information about deep levels is an essential need. To estimate deep levels of semiconductor materials, the TSC (thermally stimulated current), TSCD (thermally stimulated capacitor discharges) and admittance spectroscopic method are used. In order to study the deep levels of CdTe, the samples were taken from a CdTe-crystal grown by the vertical Bridgman method. From this boule single crystalline samples of about 0.5 mm thickness were prepared. All samples were initially p-type which was determined by the hot-probe method. In-CdTe Schottky diodes were prepared by the process of evaporation of In in the vacuum of 10 -6 Torr on surface of CdTe. The area of the deposited contact was equal to 1.626 mm 2 . As ohmic contacts, dots of Au soldered for 30 min. in temperature 160 deg C. Measurements were carried out within a 100-250 K temperature and 1-10 kHz frequency range. Related Arrhenius plots, i.e. the experimentally determined emission rates corresponding to the signal maximum divided by the square of temperature as a function of reciprocal temperature are plotted. The experimental data were best fitted by the least-square method. The fitting yielded the defect level energies E T . In this study, by using admittance spectroscopy measurements, we presented the information about the energy and concentration of the defect levels inside the gap, in order to improve the quality of

  1. Compact toroid challenge experiment with the increasing in the energy input into plasma and the level of trapped magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Romadanov, I.V.; Ryzhkov, S.V., E-mail: ryzhkov@power.bmstu.ru

    2014-12-15

    Highlights: • Compact torus formation method with high level of magnetic flux is proposed. • A compact torus is produced in a theta-pinch-coil with pulse mode of operation. • Key feature is a pulse of current in an axial direction. • We report a level of linked magnetic flux is higher than theta-pinch results. - Abstract: The present work reports on compact toroid hydrogen plasma creation by means of a specially designed discharge system and results of magnetic fields introduction. Experiments in the compact toroid challenge (CTC) device at P.N. Lebedev Physical Institute (FIAN) have been conducted since 2005. The CTC device differs from the conventional theta-pinch formation in the use of an axial current for enhanced efficiency. We have used a novel technique to maximize the flux linked to the plasma. The purpose of this method is to increase the energy input into the plasma and the level of trapped magnetic flux using an additional toroidal magnetic field. A study of compact torus formation with axial and toroidal currents was done and a new method is proposed and implemented.

  2. Influence of deep traps in the Tl response of ZrO{sub 2} + PTFE; Influencia de las trampas profundas en la respuesta Tl de ZrO{sub 2} + PTFE

    Energy Technology Data Exchange (ETDEWEB)

    Rivera M, T.; Azorin N, J.; Falcony G, C.; Martinez S, E.; Garcia H, M. [Universidad Autonoma Metropolitana-Iztapalapa, 09340 Mexico D.F. (Mexico)

    2000-07-01

    In this work are presented the results from investigating the processes related with the defects produced by ionizing radiation in ZrO{sub 2}. It is established an hypothesis which pretends to explain the phenomena that implicates the manifestation of Tl peaks in the brightness curve due to electron removal from the surface traps to the deep traps, through the thermo-transference process, where the excitonic process correspond to the F centers. During the experimental process it was observed this effect through the peaks running in Tl curve. These peaks are presented at 220 and 360 Centigrade for the material without any previous thermal treatment; while that in the samples thermally treated at 100 Centigrade during 1 minute it is observed a slipping in the first peak from 220 to 280 Centigrade, while the second stays in 360 Centigrade. (Author)

  3. Resonance Fluorescence of a Trapped Four-Level Atom with Bichromatic Driving

    International Nuclear Information System (INIS)

    Bergou, J.; Jakob, M.; Abranyos, Y.

    1999-01-01

    The resonance fluorescence spectrum of a bichromatically driven four-level atom is polarization dependent. Very narrow lines occur in the incoherent parts of the spectrum for polarization directions which are different from that of the driving fields. The degree of squeezing has a maximum of 56% which should make it easily observable. The second-order correlation function exhibits anti bunching for zero time delay and strong super bunching for certain values of the interaction parameter and time delay. For these parameters resonant two-photon emission takes place in the form of polarization entangled photon pairs. The system can be a novel source of photons in the EPR and/or Bell states. Some experiments will be proposed which make use of this unique source. (Authors)

  4. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

    2018-04-01

    Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

  5. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  6. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  7. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

    International Nuclear Information System (INIS)

    Wessels, B.W.

    1980-01-01

    In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

  8. Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

    Science.gov (United States)

    Li, S. S.; Chiu, T. T.; Loo, R. Y.

    1981-01-01

    The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

  9. Radon 222 levels in deep well waters of Toluca municipality (county)

    International Nuclear Information System (INIS)

    Olguin Gutierrez, Maria Teresa.

    1990-01-01

    The levels of Radon 222 were determined in 46 deep (50-180m) wells in the city and county of Toluca, as well as the annual radiation dose that the stomach admits when ingesting such water. The method used for the quantification of Radon 222 was liquid scintillation counting. The result revealed that levels of Radon 222 in the studied area in the range of 0 to 320 pCi l -1 . In the case of the equivalent annual dose that the stomach (empty) admits due to ingestion of water from the wells, values are in an interval between 0 to 95 mrem a -1 . This values are well below the level established by the International Commission of Radiological Protection (ICRP). The wells that had the higher concentration of Radon 222 were found in the regions of Lodo Prieto, Seminario; San Antonio Buenavista and La Trinidad Huichochitlan. (Author)

  10. A simple trapping method of exhaled water using an ice-cooled tube to monitor the tritium level in human body

    International Nuclear Information System (INIS)

    Nogawa, Norio; Makide, Yoshihiro

    1994-01-01

    A convenient and efficient method is developed for the trapping of water in exhaled air. A bent-V-shaped glass sampling tube was immersed in iced water and exhaled air was introduced into the tube through a plastic straw. The trapping efficiency of exhaled water was equivalent to those with more complex and troublesome methods. Using anywhere available ice, the water in exhaled air can be rapidly collected with this method and the tritium level in the body will be quickly obtained. (author)

  11. Induced dual EIT and EIA resonances with optical trapping phenomenon in near/far fields in the N-type four-level system

    Science.gov (United States)

    Osman, Kariman I.; Joshi, Amitabh

    2017-01-01

    The optical trapping phenomenon is investigated in the probe absorptive susceptibility spectra, during the interaction of four-level N-type atomic system with three transverse Gaussian fields, in a Doppler broadened medium. The system was studied under different temperature settings of 87Rb atomic vapor as well as different non-radiative decay rate. The system exhibits a combination of dual electromagnetically induced transparency with electromagnetically induced absorption (EIA) or transparency (EIT) resonances simultaneously in near/far field. Also, the optical trapping phenomenon is considerably affected by the non-radiative decay rate.

  12. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

    Science.gov (United States)

    Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

    2018-01-09

    It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

  14. Automatic recognition of severity level for diagnosis of diabetic retinopathy using deep visual features.

    Science.gov (United States)

    Abbas, Qaisar; Fondon, Irene; Sarmiento, Auxiliadora; Jiménez, Soledad; Alemany, Pedro

    2017-11-01

    Diabetic retinopathy (DR) is leading cause of blindness among diabetic patients. Recognition of severity level is required by ophthalmologists to early detect and diagnose the DR. However, it is a challenging task for both medical experts and computer-aided diagnosis systems due to requiring extensive domain expert knowledge. In this article, a novel automatic recognition system for the five severity level of diabetic retinopathy (SLDR) is developed without performing any pre- and post-processing steps on retinal fundus images through learning of deep visual features (DVFs). These DVF features are extracted from each image by using color dense in scale-invariant and gradient location-orientation histogram techniques. To learn these DVF features, a semi-supervised multilayer deep-learning algorithm is utilized along with a new compressed layer and fine-tuning steps. This SLDR system was evaluated and compared with state-of-the-art techniques using the measures of sensitivity (SE), specificity (SP) and area under the receiving operating curves (AUC). On 750 fundus images (150 per category), the SE of 92.18%, SP of 94.50% and AUC of 0.924 values were obtained on average. These results demonstrate that the SLDR system is appropriate for early detection of DR and provide an effective treatment for prediction type of diabetes.

  15. Sea-level and deep-sea-temperature variability over the past 5.3 million years.

    Science.gov (United States)

    Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

    2014-04-24

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

  16. Lead determination at ng/mL level by flame atomic absorption spectrometry using a tantalum coated slotted quartz tube atom trap.

    Science.gov (United States)

    Demirtaş, İlknur; Bakırdere, Sezgin; Ataman, O Yavuz

    2015-06-01

    Flame atomic absorption spectrometry (FAAS) still keeps its importance despite the relatively low sensitivity; because it is a simple and economical technique for determination of metals. In recent years, atom traps have been developed to increase the sensitivity of FAAS. Although the detection limit of FAAS is only at the level of µg/mL, with the use of atom traps it can reach to ng/mL. Slotted quartz tube (SQT) is one of the atom traps used to improve sensitivity. In atom trapping mode of SQT, analyte is trapped on-line in SQT for few minutes using ordinary sample aspiration, followed by the introduction of a small volume of organic solvent to effect the revolatilization and atomization of analyte species resulting in a transient signal. This system is economical, commercially available and easy to use. In this study, a sensitive analytical method was developed for the determination of lead with the help of SQT atom trapping flame atomization (SQT-AT-FAAS). 574 Fold sensitivity enhancement was obtained at a sample suction rate of 3.9 mL/min for 5.0 min trapping period with respect to FAAS. Organic solvent was selected as 40 µL of methyl isobutyl ketone (MIBK). To obtain a further sensitivity enhancement inner surface of SQT was coated with several transition metals. The best sensitivity enhancement, 1650 fold enhancement, was obtained by the Ta-coated SQT-AT-FAAS. In addition, chemical nature of Pb species trapped on quartz and Ta surface, and the chemical nature of Ta on quartz surface were investigated by X-ray photoelectron spectroscopy (XPS) and Raman Spectroscopy. Raman spectrometric results indicate that tantalum is coated on SQT surface in the form of Ta2O5. XPS studies revealed that the oxidation state of Pb in species trapped on both bare and Ta coated SQT surfaces is +2. For the accuracy check, the analyses of standard reference material were performed by use of SCP SCIENCE EnviroMAT Low (EU-L-2) and results for Pb were to be in good agreement with

  17. Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

    Science.gov (United States)

    Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

    2013-12-01

    To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The

  18. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  19. Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

    International Nuclear Information System (INIS)

    Shi Li-Yang; Shen Bo; Wang Ping; Yan Jian-Chang; Wang Jun-Xi

    2014-01-01

    By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al x Ga 1−x N epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al x Ga 1−x N films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al x Ga 1−x N films. (condensed matter: structural, mechanical, and thermal properties)

  20. Hydrogen trapping energy levels and hydrogen diffusion at high and low strain rates (~10{sup 5} s{sup −1} and 10{sup −7} s{sup −1}) in lean duplex stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Silverstein, R., E-mail: barrav@post.bgu.ac.il; Eliezer, D.

    2016-09-30

    Duplex stainless steels (DSS) alloys are high strength steels combined with ductility and excellent resistance to stress corrosion cracking, which makes them attractive for the pressure vessels or underwater pipelines industries. Hydrogen embrittlement (HE) is caused by the action of hydrogen in combination with residual or applied stress and can lead to the mechanical degradation of a material. Dynamic and quasi-static experiments were conducted at room temperature and strain rates of 10{sup 5} s{sup −1} and 10{sup −7} s{sup −1} on gas-phase hydrogen charged DSS. Hydrogen trapping in the various defects and its effect on the mechanical properties are discussed in details. A linear model of Lee and Lee was applied to calculate the trap activation energies. It was found that lower strain rates (~10{sup −7} s{sup −1}) will create less deep hydrogen trapping energies values; ~40% lower than in non-loaded sample. In addition, higher dynamic pressure will create higher trapping energy sites for hydrogen. Based on our experimental studies we developed an analytical model for hydrogen trapping. We have found that the strain rate has a direct influence on both hydrogen diffusion and hydrogen potential trapping sites. During deformation processes created at low strain rates (~10{sup −7} s{sup −1}) hydrogen has enough time to migrate with dislocations from deeper potential trapping sites to lower potential trapping sites.

  1. Should the U.S. proceed to consider licensing deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Curtiss, J.R.

    1993-01-01

    The United States, as well as other countries facing the question of how to handle high-level nuclear waste, has decided that the most appropriate means of disposal is in a deep geologic repository. In recent years, the Radioactive Waste Management Committee of the Nuclear Energy Agency has developed several position papers on the technical achievability of deep geologic disposal, thus demonstrating the serious consideration of deep geologic disposal in the international community. The Committee has not, as yet, formally endorsed disposal in a deep geologic repository as the preferred method of handling high-level nuclear waste. The United States, on the other hand, has studied the various methods of disposing of high-level nuclear waste, and has determined that deep geologic disposal is the method that should be developed. The purpose of this paper is to present a review of the United States' decision on selecting deep geologic disposal as the preferred method of addressing the high-level waste problem. It presents a short history of the steps taken by the U.S. in determining what method to use, discusses the NRC's waste Confidence Decision, and provides information on other issues in the U.S. program such as reconsideration of the final disposal standard and the growing inventory of spent fuel in storage

  2. TECHNICAL AND ECONOMIC EVALUATION OF OPTIMAL VOLTAGE LEVEL FOR THE POWER SUPPLY OF DEEP MINE OPERATING HORIZONS

    OpenAIRE

    Shkrabets, F. P.; Ostapchuk, O. V.; Kozhevnikov, A. V.; Akulov, A. V.

    2015-01-01

    The most perspective option for possible deep mine power supply is the one with the deep input of 35 kV voltage by installing of underground 35kV/6 kV substation. This option is caused by the expected level of electrical loads, provided by mine development, the power consumers’ deep layout (considering the distance from the source to the shaft on the surface and from the shaft to the underground substation chamber) and primary and the most responsible power consumers (blind shaft lifting devi...

  3. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    International Nuclear Information System (INIS)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-01-01

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

  4. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  5. Mathematical modelling of heat production in deep geological repository of high-level nuclear waste

    International Nuclear Information System (INIS)

    Kovanda, O.

    2017-01-01

    Waste produced by nuclear industry requires special handling. Currently, there is a research taking place, focused at possibilities of nuclear waste storage in deep geological repositories, hosted in stable geological environment. The high-level nuclear waste produces significant amount of heat for a long time, which can affect either environment outside of or within the repository in a negative way. Therefore to reduce risks, it is desirable to know the principles of such heat production, which can be achieved using mathematical modeling. This thesis comes up with a general model of heat production-time dependency, dependable on initial composition of the waste. To be able to model real situations, output of this thesis needs to be utilized in an IT solution. (authors)

  6. OPG's deep geologic repository for low and intermediate level waste - recent progress

    International Nuclear Information System (INIS)

    King, F.K.

    2006-01-01

    This paper provides a status report on Canada's first project to build a permanent repository for the long-term management of radioactive waste. Ontario Power Generation has initiated a project to construct a deep geologic repository for low- and intermediate-level waste at the Bruce Nuclear Site, at a depth in the range of 600 to 800 m in an Ordovician-age argillaceous limestone formation. The project is currently undergoing an Environmental Assessment and consulting companies in the areas of environmental assessment, geoscientific site characterization, engineering and safety assessment have been hired and technical studies are underway. Seismic surveys and borehole drilling will be initiated in the fall of 2006. The next major milestone for the project is the submission of the Environmental Assessment report, currently scheduled for December 2008. (author)

  7. Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

    International Nuclear Information System (INIS)

    Chen, X.D.; Ling, C.C.; Gong, M.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2005-01-01

    Deep level defects E 1 /E 2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E 1 and E 2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E 1 /E 2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E 1 /E 2 . The activation energy and the capture cross section of this defect are E C -0.31 eV and σ∼8x10 -14 cm 2 , respectively

  8. Trapping effects and acoustoelectric current saturation in ZnO single crystals

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1970-01-01

    Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound....... The temperature dependence of the saturated current is discussed in terms of a trapping model which includes nonlinear trapping effects. Our results indicate the presence of a shallow-donor level with an ionization energy of 50 meV and a deep-donor level approximately 230 meV below the conduction-band edge...

  9. Identities of the deep level defects E1/E2 in 6H silicon carbide

    International Nuclear Information System (INIS)

    Ling, C.C.; Chen, X.D.; Beling, C.D.; Fung, S.; Lam, T.W.; Lam, C.H.; Gong, M.; Weng, H.M.; Hang, D.S.

    2004-01-01

    E 1 /E 2 (E C -0.36/0.44 eV) are deep level donors generally found in ion-implanted, electron and neutron irradiated n-type 6H-SiC materials. Their configurations are controversial and have been related to a negatively charged carbon vacancy, a divacancy or a V Si -complex. With positron lifetime technique, we have identified V Si and V C V Si in the Lely grown n-type 6H-SiC sample, with V Si annealed out at 650 C. Concentration of V C V Si persists at 1400 C annealing and significantly decreased after the 1600 C annealing. Considering the deep level transient spectroscopic (DLTS) results on the neutron irradiated n-type SiC epi sample that E 1 /E 2 completely disappeared after the 1400 C annealing, E 1 /E 2 is not the V C V Si defect. With positron annihilation techniques, A. A. Rempel et al (2002) have shown the energy dependence of vacancy generated by electron irradiation. With low irradiation energy of 0.3MeV, only V C was generated and at higher energy (0.5MeV), Si vacancy was detected. With focus to find the minimum energy for generating E 1 /E 2 , we have performed DLTS studies on n-type epi 6H-SiC materials irradiated by electrons with varying energies. Our results suggest that E 1 /E 2 have microstructure related to a carbon vacancy or a carbon interstitial. (orig.)

  10. The control mechanism of surface traps on surface charge behavior in alumina-filled epoxy composites

    International Nuclear Information System (INIS)

    Li, Chuanyang; Hu, Jun; Lin, Chuanjie; He, Jinliang

    2016-01-01

    To investigate the role surface traps play in the charge injection and transfer behavior of alumina-filled epoxy composites, surface traps with different trap levels are introduced by different surface modification methods which include dielectric barrier discharges plasma, direct fluorination, and Cr 2 O 3 coating. The resulting surface physicochemical characteristics of experimental samples were observed using atomic force microscopy, scanning electron microscopy and fourier transform infrared spectroscopy. The surface potential under dc voltage was detected and the trap level distribution was measured. The results suggest that the surface morphology of the experimental samples differs dramatically after treatment with different surface modification methods. Different surface trap distributions directly determine the charge injection and transfer property along the surface. Shallow traps with trap level of 1.03–1.11 eV and 1.06–1.13 eV introduced by plasma and fluorination modifications are conducive for charge transport along the insulating surface, and the surface potential can be modified, producing a smoother potential curve. The Cr 2 O 3 coating can introduce a large number of deep traps with energy levels ranging from 1.09 to 1.15 eV. These can prevent charge injection through the reversed electric field formed by intensive trapped charges in the Cr 2 O 3 coatings. (paper)

  11. The use of radiation trapping in the measurement of the electron excitation cross section for the production of the 1s4 (3P1) level of Ne

    International Nuclear Information System (INIS)

    Miers, R.E.; Gastineau, J.E.; Phillps, M.H.; Anderson, L.W.; Lin, C.C.

    1981-01-01

    The authors report the use of laser induced fluorescence for the first measurement of the electron excitation cross section for the production of the 1s 4 ( 3 P 1 ) level of Ne. Radiation trapping is used to lengthen the effective lifetime of the 1s 4 level allowing for the electron excitation cross section of the 1s 4 level to be measured in a manner similar to the measurement of electron excitation cross sections of the metastable 1s 3 and 1s 5 levels. (Auth.)

  12. Deep repository for long-lived low- and intermediate-level waste. Preliminary safety assessment

    International Nuclear Information System (INIS)

    1999-11-01

    A preliminary safety assessment has been performed of a deep repository for long-lived low- and intermediate-level waste, SFL 3-5. The purpose of the study is to investigate the capacity of the facility to act as a barrier to the release of radionuclides and toxic pollutants, and to shed light on the importance of the location of the repository site. A safety assessment (SR 97) of a deep repository for spent fuel has been carried out at the same time. In SR 97, three hypothetical repository sites have been selected for study. These sites exhibit fairly different conditions in terms of hydrogeology, hydrochemistry and ecosystems. To make use of information and data from the SR 97 study, we have assumed that SFL 3-5 is co-sited with the deep repository for spent fuel. A conceivable alternative is to site SFL 3-5 as a completely separate repository. The focus of the SFL 3-5 study is a quantitative analysis of the environmental impact for a reference scenario, while other scenarios are discussed and analyzed in more general terms. Migration in the repository's near- and far-field has been taken into account in the reference scenario. Environmental impact on the three sites has also been calculated. The calculations are based on an updated forecast of the waste to be disposed of in SFL 3-5. The forecast includes radionuclide content, toxic metals and other substances that have a bearing on a safety assessment. The safety assessment shows how important the site is for safety. Two factors stand out as being particularly important: the water flow at the depth in the rock where the repository is built, and the ecosystem in the areas on the ground surface where releases may take place in the future. Another conclusion is that radionuclides that are highly mobile and long-lived, such as 36 Cl and 93 Mo , are important to take into consideration. Their being long-lived means that barriers and the ecosystems must be regarded with a very long time horizon

  13. Deep repository for long-lived low- and intermediate-level waste. Preliminary safety assessment

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-11-01

    A preliminary safety assessment has been performed of a deep repository for long-lived low- and intermediate-level waste, SFL 3-5. The purpose of the study is to investigate the capacity of the facility to act as a barrier to the release of radionuclides and toxic pollutants, and to shed light on the importance of the location of the repository site. A safety assessment (SR 97) of a deep repository for spent fuel has been carried out at the same time. In SR 97, three hypothetical repository sites have been selected for study. These sites exhibit fairly different conditions in terms of hydrogeology, hydrochemistry and ecosystems. To make use of information and data from the SR 97 study, we have assumed that SFL 3-5 is co-sited with the deep repository for spent fuel. A conceivable alternative is to site SFL 3-5 as a completely separate repository. The focus of the SFL 3-5 study is a quantitative analysis of the environmental impact for a reference scenario, while other scenarios are discussed and analyzed in more general terms. Migration in the repository's near- and far-field has been taken into account in the reference scenario. Environmental impact on the three sites has also been calculated. The calculations are based on an updated forecast of the waste to be disposed of in SFL 3-5. The forecast includes radionuclide content, toxic metals and other substances that have a bearing on a safety assessment. The safety assessment shows how important the site is for safety. Two factors stand out as being particularly important: the water flow at the depth in the rock where the repository is built, and the ecosystem in the areas on the ground surface where releases may take place in the future. Another conclusion is that radionuclides that are highly mobile and long-lived, such as {sup 36}Cl and {sup 93}Mo , are important to take into consideration. Their being long-lived means that barriers and the ecosystems must be regarded with a very long time horizon.

  14. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  15. Pixel-Level Deep Segmentation: Artificial Intelligence Quantifies Muscle on Computed Tomography for Body Morphometric Analysis.

    Science.gov (United States)

    Lee, Hyunkwang; Troschel, Fabian M; Tajmir, Shahein; Fuchs, Georg; Mario, Julia; Fintelmann, Florian J; Do, Synho

    2017-08-01

    Pretreatment risk stratification is key for personalized medicine. While many physicians rely on an "eyeball test" to assess whether patients will tolerate major surgery or chemotherapy, "eyeballing" is inherently subjective and difficult to quantify. The concept of morphometric age derived from cross-sectional imaging has been found to correlate well with outcomes such as length of stay, morbidity, and mortality. However, the determination of the morphometric age is time intensive and requires highly trained experts. In this study, we propose a fully automated deep learning system for the segmentation of skeletal muscle cross-sectional area (CSA) on an axial computed tomography image taken at the third lumbar vertebra. We utilized a fully automated deep segmentation model derived from an extended implementation of a fully convolutional network with weight initialization of an ImageNet pre-trained model, followed by post processing to eliminate intramuscular fat for a more accurate analysis. This experiment was conducted by varying window level (WL), window width (WW), and bit resolutions in order to better understand the effects of the parameters on the model performance. Our best model, fine-tuned on 250 training images and ground truth labels, achieves 0.93 ± 0.02 Dice similarity coefficient (DSC) and 3.68 ± 2.29% difference between predicted and ground truth muscle CSA on 150 held-out test cases. Ultimately, the fully automated segmentation system can be embedded into the clinical environment to accelerate the quantification of muscle and expanded to volume analysis of 3D datasets.

  16. Midgap traps related to compensation processes in CdTe alloys

    International Nuclear Information System (INIS)

    Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

    1997-01-01

    We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd 0.8 Zn 0.2 Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. copyright 1997 The American Physical Society

  17. Deuterium trapping in tungsten

    Science.gov (United States)

    Poon, Michael

    Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

  18. Deuterium trapping in tungsten

    International Nuclear Information System (INIS)

    Poon, M.

    2004-01-01

    Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D 2 molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

  19. Deuterium trapping in tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Poon, M

    2004-07-01

    Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D{sub 2} molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

  20. Trap spectrum of the ``new oxygen donor'' in silicon

    Science.gov (United States)

    Hölzlein, K.; Pensl, G.; Schulz, M.

    1984-07-01

    Electronic properties of the new oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014 1016 cm-3 eV-1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of the new donor is explained by interface states occuring at the surface of SiO x precipitates.

  1. Chloroplast phylogenomic analyses resolve deep-level relationships of an intractable bamboo tribe Arundinarieae (poaceae).

    Science.gov (United States)

    Ma, Peng-Fei; Zhang, Yu-Xiao; Zeng, Chun-Xia; Guo, Zhen-Hua; Li, De-Zhu

    2014-11-01

    The temperate woody bamboos constitute a distinct tribe Arundinarieae (Poaceae: Bambusoideae) with high species diversity. Estimating phylogenetic relationships among the 11 major lineages of Arundinarieae has been particularly difficult, owing to a possible rapid radiation and the extremely low rate of sequence divergence. Here, we explore the use of chloroplast genome sequencing for phylogenetic inference. We sampled 25 species (22 temperate bamboos and 3 outgroups) for the complete genome representing eight major lineages of Arundinarieae in an attempt to resolve backbone relationships. Phylogenetic analyses of coding versus noncoding sequences, and of different regions of the genome (large single copy and small single copy, and inverted repeat regions) yielded no well-supported contradicting topologies but potential incongruence was found between the coding and noncoding sequences. The use of various data partitioning schemes in analysis of the complete sequences resulted in nearly identical topologies and node support values, although the partitioning schemes were decisively different from each other as to the fit to the data. Our full genomic data set substantially increased resolution along the backbone and provided strong support for most relationships despite the very short internodes and long branches in the tree. The inferred relationships were also robust to potential confounding factors (e.g., long-branch attraction) and received support from independent indels in the genome. We then added taxa from the three Arundinarieae lineages that were not included in the full-genome data set; each of these were sampled for more than 50% genome sequences. The resulting trees not only corroborated the reconstructed deep-level relationships but also largely resolved the phylogenetic placements of these three additional lineages. Furthermore, adding 129 additional taxa sampled for only eight chloroplast loci to the combined data set yielded almost identical

  2. High resolution deep level transient spectroscopy and process-induced defects in silicon

    International Nuclear Information System (INIS)

    Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

    2004-01-01

    High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

  3. Ar plasma induced deep levels in epitaxial n-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A.; Nyamhere, C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, V. l. [Technische Universitaet, Dresden, 01062 Dresden (Germany)

    2012-01-01

    Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E{sub c} - 0.04 eV, E{sub c} - 0.07 eV, E{sub c} - 0.19 eV, E{sub c} - 0.31 eV, E{sub c} - 0.53 eV, and E{sub c} - 0.61 eV). The trap, E{sub c} - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E{sub c} - 0.31 eV and E{sub c} - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

  4. Ar plasma induced deep levels in epitaxial n-GaAs

    International Nuclear Information System (INIS)

    Venter, A.; Nyamhere, C.; Botha, J. R.; Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M.; Kolkovsky, V. l.

    2012-01-01

    Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E c - 0.04 eV, E c - 0.07 eV, E c - 0.19 eV, E c - 0.31 eV, E c - 0.53 eV, and E c - 0.61 eV). The trap, E c - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E c - 0.31 eV and E c - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

  5. DNCON2: improved protein contact prediction using two-level deep convolutional neural networks.

    Science.gov (United States)

    Adhikari, Badri; Hou, Jie; Cheng, Jianlin

    2018-05-01

    Significant improvements in the prediction of protein residue-residue contacts are observed in the recent years. These contacts, predicted using a variety of coevolution-based and machine learning methods, are the key contributors to the recent progress in ab initio protein structure prediction, as demonstrated in the recent CASP experiments. Continuing the development of new methods to reliably predict contact maps is essential to further improve ab initio structure prediction. In this paper we discuss DNCON2, an improved protein contact map predictor based on two-level deep convolutional neural networks. It consists of six convolutional neural networks-the first five predict contacts at 6, 7.5, 8, 8.5 and 10 Å distance thresholds, and the last one uses these five predictions as additional features to predict final contact maps. On the free-modeling datasets in CASP10, 11 and 12 experiments, DNCON2 achieves mean precisions of 35, 50 and 53.4%, respectively, higher than 30.6% by MetaPSICOV on CASP10 dataset, 34% by MetaPSICOV on CASP11 dataset and 46.3% by Raptor-X on CASP12 dataset, when top L/5 long-range contacts are evaluated. We attribute the improved performance of DNCON2 to the inclusion of short- and medium-range contacts into training, two-level approach to prediction, use of the state-of-the-art optimization and activation functions, and a novel deep learning architecture that allows each filter in a convolutional layer to access all the input features of a protein of arbitrary length. The web server of DNCON2 is at http://sysbio.rnet.missouri.edu/dncon2/ where training and testing datasets as well as the predictions for CASP10, 11 and 12 free-modeling datasets can also be downloaded. Its source code is available at https://github.com/multicom-toolbox/DNCON2/. chengji@missouri.edu. Supplementary data are available at Bioinformatics online.

  6. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    Energy Technology Data Exchange (ETDEWEB)

    Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

    2016-03-14

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  7. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    International Nuclear Information System (INIS)

    Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

    2016-01-01

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  8. Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

    International Nuclear Information System (INIS)

    Tsia, M.; Fung, S.; Beling, C.D.

    2001-01-01

    Recently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulating GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300 K. The EL2 level emission transients are clearly seen at temperatures around 300 K that yield E C -0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200 K. Possible reasons for these transients are discussed. (orig.)

  9. A poor sealing Scenario for Deep disposal of high level waste

    International Nuclear Information System (INIS)

    Weetjens, E.

    2005-01-01

    Especially for geological disposal options in clay, the safety of the repository relies chiefly on the performance of the host formation as the main barrier. Understandably, scenarios in which this clay barrier is somehow bypassed earn great concern in PA (Performance Assessment) studies. The Poor Sealing Scenario is one of those scenarios that have been recently studied by the PA section of the Waste and Disposal department in the framework of the Belgian programme on deep disposal of high-level radwaste in Boom Clay. This scenario hypothesises that at least one disposal gallery and an access shaft have been poorly sealed off, providing a preferential pathway for RNs (radionuclides). The scenario further assumes a severe climate change, which would invert the presently downward hydraulic gradient, such that the potential impact would be maximal. The main objective is assessing the contribution from two transport processes to the overall radionuclide migration from a spent fuel repository towards the Neogene aquifer. The processes considered are advective transport through the poorly sealed repository and diffusive transport through the host formation. In addition, we would like to identify the most influential parameters with respect to repository design and performance

  10. Environmental assessment for OPG's deep geologic repository for low and intermediate level waste

    International Nuclear Information System (INIS)

    Barker, D.; Rawlings, M.; Beal, A.

    2011-01-01

    The environmental assessment process for the Deep Geologic Repository (DGR) Project was initiated very early in the planning stages. Feasibility studies were initiated in 2003, after Ontario Power Generation (OPG) and the Municipality of Kincardine signed a Memorandum of Understanding agreeing to assess options for long-term management of low and intermediate level waste (L and ILW) options at the Bruce nuclear site. The location of the DGR, in the Municipality of Kincardine, is based on a willing and informed host community. The preferred approach, the DGR at the Bruce nuclear site, was advanced based on results of feasibility studies which looked at a number of options for long-term management of L&ILW and support from the local community and their elected representatives. The federal environmental assessment of the project was initiated following the signing of a Host Community Agreement and completion of a telephone poll, the results of which indicated that the majority of Municipality of Kincardine residents support the project. The environmental assessment began in 2006 as a comprehensive study and was ultimately referred to a joint review panel process in 2009. The environmental assessment considers the potential near-term effects of the construction and operations of the proposed project. Because of the nature of the project, the assessment of effects also considers long-term effects extending out to the million year time-frame, including effects of climate change, glaciations and seismic activity. (author)

  11. The study of fracture mineralization and relationship with high level radioactive waste of deep geological repository

    International Nuclear Information System (INIS)

    Reyes, Cristina N.

    2003-01-01

    Extensive investigations of the Ordovician, Dinantian and Permo-Triassic rocks of the Sellafield area of northwest England were undertaken by United Kingdom Nirex Ltd. as a possible national site for geological disposal of intermediate and low-level radioactive waste. Very detailed studies of fracture mineralisation at Sellafield were thus put in hand by Nirex Ltd. and the results summarised by the British Geological Survey. Deep (up to 2 km) boreholes were put down with excellent core recovery. It is generally agreed that the most significant pathway for the escape of all but a very few radionuclides is by solution in and advection of groundwater. In this context, rock fracture systems are particularly important because they offer a potentially rapid pathway to the surface and the biosphere. One striking aspect of this work is that the fracture mineralisation seemingly records major and rapid fluctuations in redox conditions -sometimes during apparently continuous precipitation of cements (ferroan and non-ferroan calcites, dolomite). Carbonate cements record variations in Fe 2+ availability. Fe(III) precipitates also as oxide (hematite) and Fe(II) as sulphide (pyrite). This study focuses on these elements and valence states and also on Mn; another element susceptible to redox controls but known to respond differently from Fe. Shallow sub-surface stores or repositories would be more likely to have oxidising or fluctuating redox conditions. The mineralisation sequences documented at Sellafield are potentially promising in this context. Ferroan carbonate cements are sensitive indicators of later movement of oxidising ground waters. (author)

  12. Application of systems analysis to the disposal of high level waste in deep ocean sediments

    International Nuclear Information System (INIS)

    De Marsily, G.; Dorp, F. van

    1982-01-01

    Emplacement in deep ocean sediments is one of the disposal options being considered for solidified high level radioactive waste. Task groups set up within the framework of the NEA Seabed Working Group have been studying many aspects of this option since 1976. The methods of systems analysis have been applied to enable the various parts of the problem to be assessed within an integrated framework. This paper describes the progress made by the Systems Analysis Task Group towards the development of an overall system model. The Task Group began by separating the problem into elements and defining the interfaces between these elements. A simple overall system model was then developed and used in both a preliminary assessment and a sensitivity analysis to identify the most important parameters. These preliminary analyses used a very simple model of the overall system and therefore the results cannot be used to draw any conclusions as to the acceptability of the sub-seabed disposal option. However they served to show the utility of the systems analysis method. The work of the other task groups will focus on the important parameters so that improved results can be fed back into an improved system model. Subsequent iterations will eventually provide an input to an acceptability decision. (Auth.)

  13. Total circulating microparticle levels are increased in patients with deep infiltrating endometriosis.

    Science.gov (United States)

    Munrós, J; Martínez-Zamora, M A; Tàssies, D; Coloma, J L; Torrente, M A; Reverter, J C; Carmona, F; Balasch, J

    2017-02-01

    Are the levels of total circulating cell-derived microparticles (cMPs) and circulating tissue factor-containing microparticles (cMP-TF) increased in patients with endometriosis? The levels of total cMP, but not cMP-TF, were higher in patients with endometriosis, and these were attributed to higher levels in patients with deep infiltrating endometriosis (DIE). Previous studies have reported elevated levels of total cMP in inflammatory conditions as well as higher levels of other inflammatory biomarkers in endometriosis. Increased expression of tissue factor (a transmembrane receptor for Factor VII/VIIa) in eutopic and ectopic endometrium from patients with endometriosis has been described. There is no previous data regarding total cMP and cMP-TF levels in patients with endometriosis. A prospective case-control study including two groups of patients was carried out. The E group included 65 patients with surgically confirmed endometriosis (37 with DIE lesions) and the C group comprises 33 women without surgical findings of any form of endometriosis. Patients and controls were recruited during the same 10-month period. Controls were the next patient without endometriosis undergoing surgery, after including two patients with endometriosis. Venous blood samples for total cMP and cMP-TF determinations were obtained at the time of surgery, before anesthesia at a tertiary care center. To assess total cMP, an ELISA functional assay was used and cMP-TF activity in plasma was measured using an ELISA kit. Total cMP levels in plasma were higher in the E group compared with the C group (P < 0.0001). The subanalysis of endometriosis patients with DIE or with ovarian endometriomas without DIE showed that total cMP levels were higher in the DIE group (P = 0.001). There were no statistically significant differences in cMP-TF levels among the groups analyzed. This is a preliminary study in which the sample size was arbitrarily decided, albeit in keeping with previous studies analyzing

  14. Corroded planktic foraminifer (Globorotalia menardii) in the southern Bay of Bengal sediment trap sample of February 1992

    Digital Repository Service at National Institute of Oceanography (India)

    Mohan, R.; Guptha, M.V.S.

    SEDIMENT TRAP 227 Fig.2. (a) Time series data of Total planktic foraminiferal flux [Yl axis Deep trap/ Left axis; Y2 axis Shallow trap/Right axis] for the period Feb.05, 1992 to Nov.20, 1992. (b) Time series data of Globorotalia menardii flux [Yl Deep... trap/ Left axis; Y2 axis Shallow trap /Right axis] for the period Feb.05, 1992 to Nov.20, 1992. (Note only 07 samples collected by the deep sediment trap). The Dotted Line indicates Deep trap;.Solid Line indicates Shallow trap. tests in plankton...

  15. Strategic program for deep geological disposal of high level radioactive waste in China

    International Nuclear Information System (INIS)

    Wang Ju

    2004-01-01

    A strategic program for deep geological disposal of high level radioactive waste in China is proposed in this paper. A '3-step technical strategy': site selection and site characterization-site specific underground research laboratory-final repository, is proposed for the development of China's high level radioactive waste repository. The activities related with site selection and site characterization for the repository can be combined with those for the underground research laboratory. The goal of the strategy is to build China's repository around 2040, while the activities can be divided into 4 phases: 1) site selection and site characterization; 2) site confirmation and construction of underground research laboratory, 3) in-situ experiment and disposal demonstration, and 4) construction of repository. The targets and tasks for each phase are proposed. The logistic relationship among the activities is discussed. It is pointed out that the site selection and site characterization provide the basis for the program, the fundamental study and underground research laboratory study are the key support, the performance assessment plays a guiding role, while the construction of a qualified repository is the final goal. The site selection can be divided into 3 stages: comparison among pre-selected areas, comparison among pre-selected sites and confirmation of the final site. According to this strategy, the final site for China's underground research laboratory and repository will be confirmed in 2015, where the construction of an underground laboratory will be started. In 2025 the underground laboratory will have been constructed, while in around 2040, the construction of a final repository is to be completed

  16. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  17. Benefiting from deep-level diversity : How congruence between knowledge and decision rules improves team decision making and team perceptions

    NARCIS (Netherlands)

    Rink, Floor; Ellemers, Naomi

    In two experiments we show how teams can benefit from the presence of multiple sources of deep-level task-related diversity. We manipulated differences (vs. similarities) in task information and personal decision rules in dyads (Study 1) and three-person teams (Study 2). The results indicate that

  18. I–V, C–V and deep level transient spectroscopy study of 24 MeV ...

    Indian Academy of Sciences (India)

    This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are ...

  19. Coseismic and aseismic deformations associated with mining-induced seismic events located in deep level mines in South Africa

    CSIR Research Space (South Africa)

    Milev, A

    2013-10-01

    Full Text Available Two underground sites in a deep level gold mine in South Africa were instrumented by the Council for Scientific and Industrial Research (CSIR) with tilt meters and seismic monitors. One of the sites was also instrumented by Japanese-German...

  20. Transforming Passive Receptivity of Knowledge into Deep Learning Experiences at the Undergraduate Level: An Example from Music Theory

    Science.gov (United States)

    Ferenc, Anna

    2015-01-01

    This article discusses transformation of passive knowledge receptivity into experiences of deep learning in a lecture-based music theory course at the second-year undergraduate level through implementation of collaborative projects that evoke natural critical learning environments. It presents an example of such a project, addresses key features…

  1. Trapped antihydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Butler, E., E-mail: eoin.butler@cern.ch [CERN, Physics Department (Switzerland); Andresen, G. B. [Aarhus University, Department of Physics and Astronomy (Denmark); Ashkezari, M. D. [Simon Fraser University, Department of Physics (Canada); Baquero-Ruiz, M. [University of California, Department of Physics (United States); Bertsche, W. [Swansea University, Department of Physics (United Kingdom); Bowe, P. D. [Aarhus University, Department of Physics and Astronomy (Denmark); Cesar, C. L. [Universidade Federal do Rio de Janeiro, Instituto de Fisica (Brazil); Chapman, S. [University of California, Department of Physics (United States); Charlton, M.; Deller, A.; Eriksson, S. [Swansea University, Department of Physics (United Kingdom); Fajans, J. [University of California, Department of Physics (United States); Friesen, T.; Fujiwara, M. C. [University of Calgary, Department of Physics and Astronomy (Canada); Gill, D. R. [TRIUMF (Canada); Gutierrez, A. [University of British Columbia, Department of Physics and Astronomy (Canada); Hangst, J. S. [Aarhus University, Department of Physics and Astronomy (Denmark); Hardy, W. N. [University of British Columbia, Department of Physics and Astronomy (Canada); Hayden, M. E. [Simon Fraser University, Department of Physics (Canada); Humphries, A. J. [Swansea University, Department of Physics (United Kingdom); Collaboration: ALPHA Collaboration; and others

    2012-12-15

    Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only {approx}1 T ({approx}0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be 'born' inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 10{sup 4} times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been trapped for at least 172 ms and then released-the first instance of a purely antimatter atomic system confined for any length of time (Andresen et al., Nature 468:673, 2010). We present a description of the main components of the ALPHA traps and detectors that were key to realising this result. We discuss how the antihydrogen atoms were identified and how they were discriminated from the background processes. Since the results published in Andresen et al. (Nature 468:673, 2010), refinements in the antihydrogen production technique have allowed many more antihydrogen atoms to be trapped, and held for much longer times. We have identified antihydrogen atoms that have been trapped for at least 1,000 s in the apparatus (Andresen et al., Nature Physics 7:558, 2011). This is more than sufficient time to interrogate the atoms spectroscopically, as well as to ensure that they have relaxed to their ground state.

  2. Social stakes of the reversibility in the deep storage of high level radioactive wastes

    International Nuclear Information System (INIS)

    Heriard-Dubreuil, G.; Schieber, C.; Schneider, T.

    1998-06-01

    This document proposes a study of the conditions which surrounded the reversibility introduction in high activity wastes deep storage at an international scale, as well as a reflexion on the social stakes associated there. In France, the law of december 30, 1991 concerning the research on the radioactive wastes prescribes '' the study of possibilities retrieval or non retrieval storage in deep geological deposits''. The analysis of the reversibility associated social stakes emphasizes the necessity to prevent irreversible consequences, to take care to the choices reversibility, to preserve the future generations autonomy. Thus to elaborate a more satisfactory solution between deep disposal and surface storage, a deep storage, capable of gradually evolution, concept is defined. (A.L.B.)

  3. Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

    International Nuclear Information System (INIS)

    Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

    2012-01-01

    Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

  4. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  5. Increased levels of dioxin-like substances in adipose tissue in patients with deep infiltrating endometriosis.

    Science.gov (United States)

    Martínez-Zamora, M A; Mattioli, L; Parera, J; Abad, E; Coloma, J L; van Babel, B; Galceran, M T; Balasch, J; Carmona, F

    2015-05-01

    Are the levels of biologically active and the most toxic dioxin-like substances in adipose tissue of patients with deep infiltrating endometriosis (DIE) higher than in a control group without endometriosis? DIE patients have higher levels of dioxins and polychlorinated biphenyls (PCBs) in adipose tissue compared with controls without endometriosis. Some studies have investigated the levels of dioxin-like substances, in serum samples, in patients with endometriosis, with inconsistent results. Case-control study including two groups of patients. The study group (DIE group) consisted of 30 patients undergoing laparoscopic surgery because of DIE. In all patients, an extensive preoperative work-up was performed including clinical exploration, magnetic resonance imaging (MRI) and transvaginal sonography. All patients with DIE underwent a confirmatory histological study for DIE after surgery. The non-endometriosis control group (control group), included the next consecutive patient undergoing laparoscopic surgery in our center due to adnexal benign gynecological disease (ovarian or tubal procedures other than endometriosis) after each DIE patient, and who did not present any type of endometriosis. During the surgical procedure 1-2 g of adipose tissue from the omentum were obtained. Dioxin-like substances were analyzed in adipose tissue in DIE patients and controls without endometriosis. The total toxic equivalence and concentrations of both dioxins and PCBs were significantly higher in patients with DIE in comparison with the control group (P dioxins (2,3,7,8-tetrachlorodibenzo-p-dioxin [2,3,7,8-TCDD] and 1,2,3,7,8-pentachlorodibenzo-p-dioxin [1,2,3,7,8-PeCDD]) (P dioxins and PCBs widely vary in different countries. Furthermore, the strict eligibility criteria used may preclude generalization of the results to other populations and the surgery-based sampling frame may induce a selection bias. Finally, adipose tissue was obtained only from the omentum, and not from other

  6. Systems analysis approach to the disposal of high-level waste in deep ocean sediments

    International Nuclear Information System (INIS)

    Marsily, G. de; Hill, M.D.; Murray, C.N.; Talbert, D.M.; Van Dorp, F.; Webb, G.A.M.

    1980-01-01

    Among the different options being studied for disposal of high-level solidified waste, increasing attention is being paid to that of emplacement of glasses incorporating the radioactivity in deep oceanic sediments. This option has the advantage that the areas of the oceans under investigation appear to be relatively unproductive biologically, are relatively free from cataclysmic events, and are areas in which the natural processes are slow. Thus the environment is stable and predictable so that a number of barriers to the release and dispersion of radioactivity can be defined. Task Groups set up in the framework of the International Seabed Working Group have been studying many aspects of this option since 1976. In order that the various parts of the problem can be assessed within an integrated framework, the methods of systems analysis have been applied. In this paper the Systems Analysis Task Group members report the development of an overall system model. This will be used in an iterative process in which a preliminary analysis, together with a sensitivity analysis, identifies the parameters and data of most importance. The work of the other task groups will then be focussed on these parameters and data requirements so that improved results can be fed back into an improved overall systems model. The major requirements for the development of a preliminary overall systems model are that the problem should be separated into identified elements and that the interfaces between the elements should be clearly defined. The model evolved is deterministic and defines the problem elements needed to estimate doses to man

  7. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad

    2015-11-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since the dawn of nuclear era. Albeit the relatively large number of research works that have been conducted to investigate temperature distribution surrounding waste canisters, they all abide to consider the host formations as homogeneous and isotropic. While this could be the case in some subsurface settings, in most cases, this is not true. In other words, subsurface formations are, in most cases, inherently anisotropic and heterogeneous. In this research, we show that even a slight difference in anisotropy of thermal conductivity of host rock with direction could have interesting effects on temperature fields. We investigate the effect of anisotropy angle (the angle the principal direction of anisotropy is making with the coordinate system) on the temperature field as well as on the maximum temperature attained in different barrier systems. This includes 0°, 30°, 45°, 60°, and 90°in addition to the isotropic case as a reference. We also consider the effect of anisotropy ratio (the ratio between the principal direction anisotropies) on the temperature fields and maximum temperature history. This includes ratios ranging between 1.5 and 4. Interesting patterns of temperature fields and profiles are obtained. It is found that the temperature contours are aligned more towards the principal direction of anisotropy. Furthermore the peak temperature in the buffer zone is found to be larger the smaller the anisotropy angle and vice versa. © 2015 Elsevier Ltd. All rights reserved.

  8. Trade Study of System Level Ranked Radiation Protection Concepts for Deep Space Exploration

    Science.gov (United States)

    Cerro, Jeffrey A

    2013-01-01

    A strategic focus area for NASA is to pursue the development of technologies which support exploration in space beyond the current inhabited region of low earth orbit. An unresolved issue for crewed deep space exploration involves limiting crew radiation exposure to below acceptable levels, considering both solar particle events and galactic cosmic ray contributions to dosage. Galactic cosmic ray mitigation is not addressed in this paper, but by addressing credible, easily implemented, and mass efficient solutions for the possibility of solar particle events, additional margin is provided that can be used for cosmic ray dose accumulation. As a result, NASA s Advanced Engineering Systems project office initiated this Radiation Storm Shelter design activity. This paper reports on the first year results of an expected 3 year Storm Shelter study effort which will mature concepts and operational scenarios that protect exploration astronauts from solar particle radiation events. Large trade space definition, candidate concept ranking, and a planned demonstration comprised the majority of FY12 activities. A system key performance parameter is minimization of the required increase in mass needed to provide a safe environment. Total system mass along with operational assessments and other defined protection system metrics provide the guiding metrics to proceed with concept developments. After a downselect to four primary methods, the concepts were analyzed for dosage severity and the amount of shielding mass necessary to bring dosage to acceptable values. Besides analytical assessments, subscale models of several concepts and one full scale concept demonstrator were created. FY12 work terminated with a plan to demonstrate test articles of two selected approaches. The process of arriving at these selections and their current envisioned implementation are presented in this paper.

  9. Increased Levels of NF-kB-Dependent Markers in Cancer-Associated Deep Venous Thrombosis.

    Science.gov (United States)

    Malaponte, Grazia; Signorelli, Salvatore S; Bevelacqua, Valentina; Polesel, Jerry; Taborelli, Martina; Guarneri, Claudio; Fenga, Concettina; Umezawa, Kazou; Libra, Massimo

    2015-01-01

    Several studies highlight the role of inflammatory markers in thrombosis as well as in cancer. However, their combined role in cancer-associated deep vein thrombosis (DVT) and the molecular mechanisms, involved in its pathophysiology, needs further investigations. In the present study, C-reactive protein, interleukin-6 (IL-6), tumor necrosis factor-α (TNF-α), interleukin-1 (IL-1β), matrix metalloproteases-9 (MMP-9), vascular endothelial growth factor (VEGF), tissue factor (TF), fibrinogen and soluble P-selectin, were analyzed in plasma and in monocyte samples from 385 cancer patients, of whom 64 were concomitantly affected by DVT (+). All these markers were higher in cancer patients DVT+ than in those DVT-. Accordingly, significantly higher NF-kB activity was observed in cancer patients DVT+ than DVT-. Significant correlation between data obtained in plasma and monocyte samples was observed. NF-kB inhibition was associated with decreased levels of all molecules in both cancer DVT+ and DVT-. To further demonstrate the involvement of NF-kB activation by the above mentioned molecules, we treated monocyte derived from healthy donors with a pool of sera from cancer patients with and without DVT. These set of experiments further suggest the significant role played by some molecules, regulated by NF-kB, and detected in cancer patients with DVT. Our data support the notion that NF-kB may be considered as a therapeutic target for cancer patients, especially those complicated by DVT. Treatment with NF-kB inhibitors may represent a possible strategy to prevent or reduce the risk of DVT in cancer patients.

  10. The structural integrity of high level waste containers for deep disposal

    International Nuclear Information System (INIS)

    Keer, T.J.; Martindale, N.J.; Haijtink, B.

    1990-01-01

    Most countries with a nuclear power program are developing plans to dispose of high level waste in deep geological repositories. These facilities are typically in the range 500-1000m below ground. Although long term safety analyses mainly rely on the isolation function of the geological barrier, for the medium term (between 500 and 1000 years) a barrier such as a container (overpack) may play an important role. This paper addresses the mechanical/structural behavior of these structures under extreme geological pressures. The work described in the paper was conducted within the COMPAS project (Container Mechanical Performance Assessment) funded by the Commission of the European Communities and the United Kingdom Department of the Environment. The work was aimed at predicting the modes of failure and failure pressures which characterize the heavy, thick walled mild steel containers which might be considered for the disposal of vitrified waste. The work involved a considerable amount of analytical work, using 3-D non-linear finite element techniques, coupled with a large parallel program of experimental work. The experimental work consisted of a number of scale model tests in which the response of the containers was examined under external pressures as high as 120MPa. Extensive strain-gauge instrumentation was used to record the behavior of the models as they were driven to collapse. A number of comparative computer calculations were carried out by organizations from various European countries. Correlations were established between experimental and analytical data and guidelines regarding the choice of suitable software were established. The work concluded with a full 3-D simulation of the behavior of a container under long-term disposal conditions. In this analysis, non-linearities due to geological effects and material/geometry effects in the container were properly accounted for. 6 refs., 9 figs., 4 tabs

  11. Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Gou, J.; Imazumi, M.; Yamaguchi, M.

    2007-01-01

    The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration and recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center

  12. The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

    Science.gov (United States)

    Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

    1999-11-01

    In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

  13. Particle trapping in stimulated scattering processes

    International Nuclear Information System (INIS)

    Karttunen, S.J.; Heikkinen, J.A.

    1981-01-01

    Particle trapping effects on stimulated Brillouin and Raman scattering are investigated. A time and space dependent model assumes a Maxwellian plasma which is taken to be homogeneous in the interaction region. Ion trapping has a rather weak effect on stimulated Brillouin scattering and large reflectivities are obtained even in strong trapping regime. Stimulated Raman scattering is considerably reduced by electron trapping. Typically 15-20 times larger laser intensities are required to obtain same reflectivity levels than without trapping. (author)

  14. Molecular analyses reveal high levels of eukaryotic richness associated with enigmatic deep-sea protists (Komokiacea)

    DEFF Research Database (Denmark)

    Lecroq, Beatrice; Gooday, Andrew John; Cedhagen, Tomas

    2009-01-01

    Komokiaceans are testate agglutinated protists, extremely diverse and abundant in the deep sea. About 40 species are described and share the same main morpholog- ical feature: a test consisting of narrow branching tubules forming a complex system. In some species, the interstices between the tubu......Komokiaceans are testate agglutinated protists, extremely diverse and abundant in the deep sea. About 40 species are described and share the same main morpholog- ical feature: a test consisting of narrow branching tubules forming a complex system. In some species, the interstices between...... suggest strongly that komokiaceans, and probably many other large testate protists, provide a habitat structure for a large spectrum of eukaryotes, significantly contributing to maintaining the biodiversity of micro- and meiofaunal communities in the deep sea....

  15. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  16. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C. M.; Lisman-van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    BackgroundThe initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. ObjectiveTo assess the role of the TF

  17. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C M; Lisman- van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    2015-01-01

    Background: The initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. Objective: To assess the role of the TF

  18. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C. M.; Lisman-van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    2015-01-01

    The initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. To assess the role of the TF pathway in the

  19. The behaviour of cemented backfill and the surrounding rockmass at western deep levels south mine

    CSIR Research Space (South Africa)

    York, G

    1992-11-01

    Full Text Available Cemented backfill is used at Western Deep Mine as local and regional support areas of high stopping width. The in situ performance is reported and compared to laboratory tests. A back analysis was carried out to obtain a more accurate value...

  20. SeaWiFS Deep Blue Aerosol Optical Thickness Monthly Level 3 Climatology Data Gridded at 0.5 Degrees V004

    Data.gov (United States)

    National Aeronautics and Space Administration — The SeaWiFS Deep Blue Level 3 Monthly Climatology Product contains monthly global climatology gridded (0.5 x 0.5 deg) data derived from SeaWiFS Deep Blue Level 3...

  1. Deep and shallow acceptor levels in solid solutions Pb0.98Sm0.02S

    International Nuclear Information System (INIS)

    Hasanov, H.A.; Rahimov, R.Sh.

    2010-01-01

    It is well known that the metal vacancies the energy levels of which take place between permitted energies of valency band, are the main acceptor centers in the led salts and solid solutions on their base. The aim of the given paper is founding of character of acceptor levels in single crystals Pb 0 .98Sm 0 .02S with low concentrations of charge carrier. The deep and shallow acceptor levels are found at investigation of Hall effect in Pb 0 .98Sm 0 .02S solid solution with character of low concentrations of charge carriers in crystals

  2. Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

    International Nuclear Information System (INIS)

    Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

    2015-01-01

    Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

  3. Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

    International Nuclear Information System (INIS)

    Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

    2006-01-01

    We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

  4. Summary report of a seminar on geosphere modelling requirements of deep disposal of low and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Piper, D.; Paige, R.W.; Broyd, T.W.

    1989-02-01

    A seminar on the geosphere modelling requirements of deep disposal of low and intermediate level radioactive wastes was organised by WS Atkins Engineering Sciences as part of Her Majesty's Inspectorate of Pollution's Radioactive Waste Assessment Programme. The objectives of the seminar were to review geosphere modelling capabilities and prioritise, if possible, any requirements for model development. Summaries of the presentations and subsequent discussions are given in this report. (author)

  5. Assessing the Level of Disability, Deep Cervical Flexor Endurance and Fear Avoidance Beliefs in Bankers with Neck Pain

    Directory of Open Access Journals (Sweden)

    Deptee Warikoo

    2013-08-01

    Full Text Available Objective: To assess the level of disability, the deep cervical flexor endurance and fear avoidance beliefs (FAB in bankers with neck pain and to find a correlation between disability and deep cervical muscle endurance, FAB and disability, FAB and deep flexor muscle endurance. Methods: It ws an observational study. The Subjects who had neck pain and minimum 5 years’ experience as a Banker participated in the study. Total 100 subjects were selected. All the subjects were assessed for their disability by the neck pain and disability score (NPDI, their deep cervical flexor endurance using Pressure Biofeedback using Cranio-Cervical flexion test (CCFT and Fear Avoidance Belief by using questionnaire( FABQ. Results: It was found that bankers have a moderate level of disability. The results showed an elevated fear avoidance belief with a mean value of FABQ-PA 21.61±4.42 and FABQ-W 37.81± 5.69. The results indicated that a negative correlation was found between NPDI and CCFT (r=0.855. A positive correlation was found between NPDI and FABQ-PA(r=0.337, FABQ-W(r=0.500. In the present study a negative correlation was found between CCFT and FABQ-W(r=0.553, FABQ-PA (0.348 and positive correlation (r=0.540 was found between FABQ-PA and FABQ-W. Conclusion: The present study concluded that there was a significant level of disability and significantly decreased endurance level and increased fear avoidance beliefs (both work and physical activity related among bankers with neck pain. In addition to that there was a significant correlation found between NPDI and CCFT, NPDI and FABQ, CCFT and FABQ, FABQ-W and FABQ-PA.

  6. Monitoring landscape-level distribution and migration Phenology of Raptors using a volunteer camera-trap network

    Science.gov (United States)

    Jachowski, David S.; Katzner, Todd; Rodrigue, Jane L.; Ford, W. Mark

    2015-01-01

    Conservation of animal migratory movements is among the most important issues in wildlife management. To address this need for landscape-scale monitoring of raptor populations, we developed a novel, baited photographic observation network termed the “Appalachian Eagle Monitoring Program” (AEMP). During winter months of 2008–2012, we partnered with professional and citizen scientists in 11 states in the United States to collect approximately 2.5 million images. To our knowledge, this represents the largest such camera-trap effort to date. Analyses of data collected in 2011 and 2012 revealed complex, often species-specific, spatial and temporal patterns in winter raptor movement behavior as well as spatial and temporal resource partitioning between raptor species. Although programmatic advances in data analysis and involvement are needed, the continued growth of the program has the potential to provide a long-term, cost-effective, range-wide monitoring tool for avian and terrestrial scavengers during the winter season. Perhaps most importantly, by relying heavily on citizen scientists, AEMP has the potential to improve long-term interest and support for raptor conservation and serve as a model for raptor conservation programs in other portions of the world.

  7. Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Alfieri, G.; Kimoto, T.

    2013-01-01

    We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH 6 and EH 7 levels, which are known to constitute EH 6/7 , a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH 6 and EH 7 shows that EH 7 is dominant over EH 6 and confirms that their nature is related to a carbon vacancy.

  8. Vitrification treatment options for disposal of greater-than-Class-C low-level waste in a deep geologic repository

    International Nuclear Information System (INIS)

    Fullmer, K.S.; Fish, L.W.; Fischer, D.K.

    1994-11-01

    The Department of Energy (DOE), in keeping with their responsibility under Public Law 99-240, the Low-Level Radioactive Waste Policy Amendments Act of 1985, is investigating several disposal options for greater-than-Class C low-level waste (GTCC LLW), including emplacement in a deep geologic repository. At the present time vitrification, namely borosilicate glass, is the standard waste form assumed for high-level waste accepted into the Civilian Radioactive Waste Management System. This report supports DOE's investigation of the deep geologic disposal option by comparing the vitrification treatments that are able to convert those GTCC LLWs that are inherently migratory into stable waste forms acceptable for disposal in a deep geologic repository. Eight vitrification treatments that utilize glass, glass ceramic, or basalt waste form matrices are identified. Six of these are discussed in detail, stating the advantages and limitations of each relative to their ability to immobilize GTCC LLW. The report concludes that the waste form most likely to provide the best composite of performance characteristics for GTCC process waste is Iron Enriched Basalt 4 (IEB4)

  9. Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

    International Nuclear Information System (INIS)

    Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

    2012-01-01

    Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

  10. Considerations affecting deep-well disposal of tritium-bearing low-level aqueous waste from nuclear fuel reprocessing plants

    International Nuclear Information System (INIS)

    Trevorrow, L.E.; Warner, D.L.; Steindler, M.J.

    1977-03-01

    Present concepts of disposal of low-level aqueous wastes (LLAW) that contain much of the fission-product tritium from light water reactors involve dispersal to the atmosphere or to surface streams at fuel reprocessing plants. These concepts have been challenged in recent years. Deep-well injection of low-level aqueous wastes, an alternative to biospheric dispersal, is the subject of this presentation. Many factors must be considered in assessing its feasibility, including technology, costs, environmental impact, legal and regulatory constraints, and siting. Examination of these factors indicates that the technology of deep-well injection, extensively developed for other industrial wastes, would require little innovation before application to low-level aqueous wastes. Costs would be low, of the order of magnitude of 10 -4 mill/kWh. The environmental impact of normal deep-well disposal would be small, compared with dispersal to the atmosphere or to surface streams; abnormal operation would not be expected to produce catastrophic results. Geologically suitable sites are abundant in the U.S., but a well would best be co-located with the fuel-reprocessing plant where the LLAW is produced. Legal and regulatory constraints now being developed will be the most important determinants of the feasibility of applying the method

  11. Ripple Trap

    Science.gov (United States)

    2006-01-01

    3 April 2006 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows the margin of a lava flow on a cratered plain in the Athabasca Vallis region of Mars. Remarkably, the cratered plain in this scene is essentially free of bright, windblown ripples. Conversely, the lava flow apparently acted as a trap for windblown materials, illustrated by the presence of the light-toned, wave-like texture over much of the flow. That the lava flow surface trapped windblown sand and granules better than the cratered plain indicates that the flow surface has a rougher texture at a scale too small to resolve in this image. Location near: 10.7oN, 204.5oW Image width: 3 km (1.9 mi) Illumination from: lower left Season: Northern Winter

  12. Dual deep modeling: multi-level modeling with dual potencies and its formalization in F-Logic.

    Science.gov (United States)

    Neumayr, Bernd; Schuetz, Christoph G; Jeusfeld, Manfred A; Schrefl, Michael

    2018-01-01

    An enterprise database contains a global, integrated, and consistent representation of a company's data. Multi-level modeling facilitates the definition and maintenance of such an integrated conceptual data model in a dynamic environment of changing data requirements of diverse applications. Multi-level models transcend the traditional separation of class and object with clabjects as the central modeling primitive, which allows for a more flexible and natural representation of many real-world use cases. In deep instantiation, the number of instantiation levels of a clabject or property is indicated by a single potency. Dual deep modeling (DDM) differentiates between source potency and target potency of a property or association and supports the flexible instantiation and refinement of the property by statements connecting clabjects at different modeling levels. DDM comes with multiple generalization of clabjects, subsetting/specialization of properties, and multi-level cardinality constraints. Examples are presented using a UML-style notation for DDM together with UML class and object diagrams for the representation of two-level user views derived from the multi-level model. Syntax and semantics of DDM are formalized and implemented in F-Logic, supporting the modeler with integrity checks and rich query facilities.

  13. Trapped antihydrogen

    CERN Document Server

    Butler, E; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Jenkins, M J; Jonsell, S; Jørgensen, L V; Kemp, S L; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki,Y

    2012-01-01

    Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only ∼1 T (∼0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be ‘born’ inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 104 times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been ...

  14. Statistics of work and orthogonality catastrophe in discrete level systems: an application to fullerene molecules and ultra-cold trapped Fermi gases

    Directory of Open Access Journals (Sweden)

    Antonello Sindona

    2015-03-01

    Full Text Available The sudden introduction of a local impurity in a Fermi sea leads to an anomalous disturbance of its quantum state that represents a local quench, leaving the system out of equilibrium and giving rise to the Anderson orthogonality catastrophe. The statistics of the work done describe the energy fluctuations produced by the quench, providing an accurate and detailed insight into the fundamental physics of the process. We present here a numerical approach to the non-equilibrium work distribution, supported by applications to phenomena occurring at very diverse energy ranges. One of them is the valence electron shake-up induced by photo-ionization of a core state in a fullerene molecule. The other is the response of an ultra-cold gas of trapped fermions to an embedded two-level atom excited by a fast pulse. Working at low thermal energies, we detect the primary role played by many-particle states of the perturbed system with one or two excited fermions. We validate our approach through the comparison with some photoemission data on fullerene films and previous analytical calculations on harmonically trapped Fermi gases.

  15. Production-Level Facial Performance Capture Using Deep Convolutional Neural Networks

    OpenAIRE

    Laine, Samuli; Karras, Tero; Aila, Timo; Herva, Antti; Saito, Shunsuke; Yu, Ronald; Li, Hao; Lehtinen, Jaakko

    2016-01-01

    We present a real-time deep learning framework for video-based facial performance capture -- the dense 3D tracking of an actor's face given a monocular video. Our pipeline begins with accurately capturing a subject using a high-end production facial capture pipeline based on multi-view stereo tracking and artist-enhanced animations. With 5-10 minutes of captured footage, we train a convolutional neural network to produce high-quality output, including self-occluded regions, from a monocular v...

  16. Circulating levels of carbamylated protein and neutrophil extracellular traps are associated with periodontitis severity in patients with rheumatoid arthritis: A pilot case-control study.

    Science.gov (United States)

    Kaneko, Chihiro; Kobayashi, Tetsuo; Ito, Satoshi; Sugita, Noriko; Murasawa, Akira; Nakazono, Kiyoshi; Yoshie, Hiromasa

    2018-01-01

    An interrelationship between rheumatoid arthritis (RA) and periodontitis has been suggested due to their common pathogenic mechanisms. Protein carbamylation and neutrophil extracellular traps (NETs) formation have been shown to be related to autoimmune conditions, including RA, but their association with periodontitis has not been elucidated. Therefore, we assessed whether or not circulating levels of carbamylated protein (CarP) and NETs are associated with periodontitis severity and influenced by periodontal treatment. We conducted a retrospective case-control study that included 40 patients with RA and periodontitis, 30 patients with periodontitis, and 43 systemically and periodontally healthy controls to assess the circulating levels of CarP and NETs and rheumatologic and periodontal conditions. The same assessments were also performed in 22 patients with RA and periodontitis after 2 months of periodontal treatment, including oral hygiene instruction and full-mouth supragingival scaling. Patients with RA and periodontitis showed significantly higher serum levels of CarP and NETs than the control group (P = 0.04 and P periodontitis. Multiple logistic regression analyses also revealed significantly positive associations between the serum levels of CarP and NETs and moderate to severe periodontitis (P = 0.03 and P = 0.001, respectively). Furthermore, periodontal treatment significantly decreased the serum levels of CarP and NETs in patients with RA and periodontitis (P = 0.03 and P = 0.02). The circulating levels of CarP and NETs are associated with periodontitis severity and influenced by periodontal treatment in patients with RA.

  17. Spin resonance with trapped ions

    Energy Technology Data Exchange (ETDEWEB)

    Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E [Institut fuer Laser-Physik, Universitaet Hamburg, Jungiusstrasse 9, 20355 Hamburg (Germany)

    2003-03-14

    A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped {sup 171}Yb{sup +}, we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states.

  18. Spin resonance with trapped ions

    International Nuclear Information System (INIS)

    Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E

    2003-01-01

    A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped 171 Yb + , we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states

  19. Exploring the Deep-Level Reasoning Questions Effect during Vicarious Learning among Eighth to Eleventh Graders in the Domains of Computer Literacy and Newtonian Physics

    Science.gov (United States)

    Gholson, Barry; Witherspoon, Amy; Morgan, Brent; Brittingham, Joshua K.; Coles, Robert; Graesser, Arthur C.; Sullins, Jeremiah; Craig, Scotty D.

    2009-01-01

    This paper tested the deep-level reasoning questions effect in the domains of computer literacy between eighth and tenth graders and Newtonian physics for ninth and eleventh graders. This effect claims that learning is facilitated when the materials are organized around questions that invite deep-reasoning. The literature indicates that vicarious…

  20. AlxGa1--xN/GaN band offsets determined by deep-level emission

    International Nuclear Information System (INIS)

    Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

    2001-01-01

    We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

  1. Guidelines for the operation and closure of deep geological repositories for the disposal of high level and alpha bearing wastes

    International Nuclear Information System (INIS)

    1991-10-01

    The operation and closure of a deep geological repository for the disposal of high level and alpha bearing wastes is a long term project involving many disciplines. This unique combination of nuclear operations in a deep underground location will require careful planning by the operating organization. The basic purpose of the operation stage of the deep repository is to ensure the safe disposal of the radioactive wastes. The purpose of the closure stage is to ensure that the wastes are safely isolated from the biosphere, and that the surface region can be returned to normal use. During these two stages of operation and closure, it is essential that both workers and the public are safely protected from radiation hazards, and that workers are protected from the hazards of working underground. For these periods of the repository, it is essential to carry out monitoring for purposes of radiological protection, and to continue testing and investigations to provide data for repository performance confirmation and for final safety assessment. Over the lengthy stages of operation and closure, there will be substantial feedback of experience and generation of site data. These will lead both to improved quality of operation and a better understanding of the site characteristics, thereby enhancing the confidence in the ability of the repository system to isolate the waste and protect future generations. 15 refs

  2. Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

    International Nuclear Information System (INIS)

    Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

    1982-01-01

    A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

  3. Feasibility of high level radioactive waste disposal in deep sea sediments

    International Nuclear Information System (INIS)

    Buckley, D.E.

    1987-01-01

    For the past ten years, an international program has been conducted to investigate the concept feasibility for disposing of spent nuclear fuel waste in deep ocean sediments. These studies by the Seabed Working Group were coordinated by the Nuclear Energy Agency of the Organization for Economic Cooperation and Development. Penetrators have been considered as the primary method of waste emplacement. This required emphasis on studies of the nature of the plastic sediments which would form the primary barrier to the release of radionuclides into the biosphere. Site qualification guidelines, included criteria for tectonic and sedimentary stability over periods of at least 10 5 years. Using these guidelines two potential areas were identified: one in the Madeira Abyssal Plain; and one in the Southern Nares Abyssal Plain, both in the North Atlantic

  4. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Inversion of Qubit Energy Levels in Qubit-Oscillator Circuits in the Deep-Strong-Coupling Regime

    Science.gov (United States)

    Yoshihara, F.; Fuse, T.; Ao, Z.; Ashhab, S.; Kakuyanagi, K.; Saito, S.; Aoki, T.; Koshino, K.; Semba, K.

    2018-05-01

    We report on experimentally measured light shifts of superconducting flux qubits deep-strongly coupled to L C oscillators, where the coupling constants are comparable to the qubit and oscillator resonance frequencies. By using two-tone spectroscopy, the energies of the six lowest levels of each circuit are determined. We find huge Lamb shifts that exceed 90% of the bare qubit frequencies and inversions of the qubits' ground and excited states when there are a finite number of photons in the oscillator. Our experimental results agree with theoretical predictions based on the quantum Rabi model.

  6. Study on deep levels in near-surface region of Hgsub(1-x)Cdsub(x)Te semiconductor

    International Nuclear Information System (INIS)

    Antonov, V.V.; Vojtsekhovskij, A.V.; Kazak, E.P.; Lanskaya, O.G.; Pakhorukov, V.A.

    1983-01-01

    Experimental investigation into MOS-structures on the basis of narrow-band n-Hgsub(1-x)Cdsub(X)Te semiconductor was conducted. Anode-oxide film, grown in 0.1N KOH solution in ethylenglycol was used as dielectric laer, olt-farad characteristics of the MOS- structures, measured, at different frequencies of test voltage, testify to the presence of deep monoenergetic levels (Esub(t)) in near surface region of semicondUctor located within the limits of the energy gap of Hgsub(1-x)Cdsub(x)Te. Two types of levels are observed in the n-Hgsub(1-x)Cdsub(x)Te-base MOS-structures at x approximately equal to 0.21: Isub(t)=0.105-0.096 eV and Esub(t)=0.045-0.042 eV (with respect to the valent zone ceiling). The frequency dependence of the equivalent parallel conductivity of the Hgsub(1-x)Cdsub(x)Te-base MOS-structure different voltages on a field electrode was used to show, that the observed deep level has the bulk nature. Results of numeral estimations of the state densities on the impurity center and of capture cross-section of a positive charge (deltasub(p)=6.7x10 -17 -1.4x10 -16 )sm 2 ) are given

  7. Trapping molecules in two and three dimensions

    International Nuclear Information System (INIS)

    Pinkse, PW.H.; Junglen, T.; Rieger, T.; Rangwala, S.A.; Windpassinger, P.; Rempe, G.

    2005-01-01

    Full text: Cold molecules offer a new testing ground for quantum-physical effects in nature. For example, producing slow beams of large molecules could push experiments studying the boundary between quantum interference and classical particles up towards ever heavier particles. Moreover, cold molecules, in particular YbF, seem an attractive way to narrow down the constraints on the value of the electron dipole moment and finally, quantum information processing using chains of cold polar molecules or vibrational states in molecules have been proposed. All these proposals rely on advanced production and trapping techniques, most of which are still under development. Therefore, novel production and trapping techniques for cold molecules could offer new possibilities not found in previous methods. Electric traps hold promise for deep trap potentials for neutral molecules. Recently we have demonstrated two-dimensional trapping of polar molecules in a four-wire guide using electrostatic and electrodynamic trapping techniques. Filled from a thermal effusive source, such a guide will deliver a beam of slow molecules, which is an ideal source for interferometry experiments with large molecules, for instance. Here we report about the extension of this work to three-dimensional trapping. Polar molecules with a positive Stark shift can be trapped in the minimum of an electrostatic field. We have successfully tested a large volume electrostatic trap for ND3 molecules. A special feature of this trap is that it can be loaded continuously from an electrostatic guide, at a temperature of a few hundred mK. (author)

  8. Electromagnetic trapping of neutral atoms

    International Nuclear Information System (INIS)

    Metcalf, H.J.

    1986-01-01

    Cooling and trapping of neutral atoms is a new branch of applied physics that has potential for application in many areas. The authors present an introduction to laser cooling and magnetic trapping. Some basic ideas and fundamental limitations are discussed, and the first successful experiments are reviewed. Trapping a neutral object depends on the interaction between an inhomogeneous electromagnetic field and a multiple moment that results in the exchange of kinetic for potential energy. In neutral atom traps, the potential energy must be stored as internal atomic energy, resulting in two immediate and extremely important consequences. First, the atomic energy levels will necessarily shift as the atoms move in the trap, and, second, practical traps for ground state neutral atoms atr necessarily very shallow compared to thermal energy. This small depth also dictates stringent vacuum requirements because a trapped atom cannot survive a single collision with a thermal energy background gas molecule. Neutral trapping, therefore, depends on substantial cooling of a thermal atomic sample and is inextricably connected with the cooling process

  9. Mapping vaccinia virus DNA replication origins at nucleotide level by deep sequencing.

    Science.gov (United States)

    Senkevich, Tatiana G; Bruno, Daniel; Martens, Craig; Porcella, Stephen F; Wolf, Yuri I; Moss, Bernard

    2015-09-01

    Poxviruses reproduce in the host cytoplasm and encode most or all of the enzymes and factors needed for expression and synthesis of their double-stranded DNA genomes. Nevertheless, the mode of poxvirus DNA replication and the nature and location of the replication origins remain unknown. A current but unsubstantiated model posits only leading strand synthesis starting at a nick near one covalently closed end of the genome and continuing around the other end to generate a concatemer that is subsequently resolved into unit genomes. The existence of specific origins has been questioned because any plasmid can replicate in cells infected by vaccinia virus (VACV), the prototype poxvirus. We applied directional deep sequencing of short single-stranded DNA fragments enriched for RNA-primed nascent strands isolated from the cytoplasm of VACV-infected cells to pinpoint replication origins. The origins were identified as the switching points of the fragment directions, which correspond to the transition from continuous to discontinuous DNA synthesis. Origins containing a prominent initiation point mapped to a sequence within the hairpin loop at one end of the VACV genome and to the same sequence within the concatemeric junction of replication intermediates. These findings support a model for poxvirus genome replication that involves leading and lagging strand synthesis and is consistent with the requirements for primase and ligase activities as well as earlier electron microscopic and biochemical studies implicating a replication origin at the end of the VACV genome.

  10. Feasibility of high level radioactive waste disposal in deep sea sediments

    International Nuclear Information System (INIS)

    Buckley, D.E.

    1987-01-01

    For the past ten years, an international program has been conducted to investigate the concept feasibility for disposing of spent nuclear fuel waste in deep ocean sediments. These studies by the Seabed Working Group were coordinated by the Nuclear Energy Agency of the Organization for Economic Cooperation and Development. Penetrators have been considered as the primary method of waste emplacement. This required emphasis on studies of the nature of the plastic sediments which would form the primary barrier to the release of radionuclides into the biosphere. Site qualification guidelines, included criteria for tectonic and sedimentary stability over periods of at least 10 5 years. Using these guidelines two potential areas were identified: one in the Madeira Abyssal Plain; and one in the Southern Nares Abyssal Plain, both in the North Atlantic. The sediment barrier properties are quite different in terms of dominant mineralogy (carbonates in MAP, and silicous clays in SNAP). The MAP is dominated by thick wide-spread turbidites, but SNAP is dominated by thin discontinuous turbidites

  11. Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

    Energy Technology Data Exchange (ETDEWEB)

    Lastovskii, S. B., E-mail: lastov@ifttp.bas-net.by [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Markevich, V. P. [Manchester University, Photon Science Institute (United Kingdom); Yakushevich, H. S.; Murin, L. I. [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Krylov, V. P. [Vladimir State University (Russian Federation)

    2016-06-15

    The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

  12. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

    International Nuclear Information System (INIS)

    Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

    2015-01-01

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

  13. Decomposition of groundwater level fluctuations using transfer modelling in an area with shallow to deep unsaturated zones

    Science.gov (United States)

    Gehrels, J. C.; van Geer, F. C.; de Vries, J. J.

    1994-05-01

    Time series analysis of the fluctuations in shallow groundwater levels in the Netherlands lowlands have revealed a large-scale decline in head during recent decades as a result of an increase in land drainage and groundwater withdrawal. The situation is more ambiguous in large groundwater bodies located in the eastern part of the country, where the unsaturated zone increases from near zero along the edges to about 40 m in the centre of the area. As depth of the unsaturated zone increases, groundwater level reacts with an increasing delay to fluctuations in climate and influences of human activities. The aim of the present paper is to model groundwater level fluctuations in these areas using a linear stochastic transfer function model, relating groundwater levels to estimated precipitation excess, and to separate artificial components from the natural groundwater regime. In this way, the impact of groundwater withdrawal and the reclamation of a 1000 km 2 polder area on the groundwater levels in the adjoining higher ground could be assessed. It became evident that the linearity assumption of the transfer functions becomes a serious drawback in areas with the deepest groundwater levels, because of non-linear processes in the deep unsaturated zone and the non-synchronous arrival of recharge in the saturated zone. Comparison of the results from modelling the influence of reclamation with an analytical solution showed that the lowering of groundwater level is partly compensated by reduced discharge and therefore is less than expected.

  14. Deep levels in SiC:V by high temperature transport measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mitchel, W.C.; Perrin, R.; Goldstein, J.; Roth, M.; Ahoujja, M.; Smith, S.R.; Solomon, J.S.; Landis, G.; Jenny, J. [Air Force Materials Lab., Wright-Patterson AFB, OH (United States). Research and Technology Div.; Evwaraye, A.O. [Univ. of Dayton, Dayton, OH (United States); Hobgood, H.McD.; Augustine, G.; Balakrishna, V. [Northrop Grumman Corp., Science and Technology Center, Pittsburgh, PA (United States)

    1998-06-01

    Vanadium doped 6H and 4H SiC have been studied with high temperature Hall effect and resistivity, optical absorption and SIMS. The 6H samples were found to exhibit three thermal activation energies, 0.35 eV, 0.7 eV and near mid-gap. The 0.3 eV level is due to thermal ionization of residual uncompensated boron. We attribute the mid-gap level to thermal ionization of the vanadium donor level. The 0.7 eV activation is believed to be due to transfer of electrons from the ionized vanadium acceptor levels to the conduction band. These results suggest that the vanadium donor and acceptor levels are located at E{sub c}-1.42 eV and E{sub V} + 2.4 eV respectively. (orig.) 7 refs.

  15. Hole traps in n-GaN detected by minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tokuda, Yutaka; Yamada, Yujiro; Shibata, Tatsunari; Yamaguchi, Shintaro [Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, 470-0392 Toyota (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Nagakute, 480-1192 Aichi (Japan)

    2011-07-15

    Minority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n-GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n-GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the E{sub v} + 0.86 eV hole trap with the trap concentration of 1.1x10{sup 16} cm{sup -3}. The E{sub v} + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n-GaN. It is suggested that the E{sub v} + 0.86 eV hole trap is associated with the V{sub Ga}-related defect or carbon-related defect. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Basic reasons and the practice of using deep water-bearing levels for liquid radioactive waste disposal

    International Nuclear Information System (INIS)

    Spitsyn, V.I.; Pimenov, M.K.; Balukova, V.D.; Leontichuk, A.S.; Kokorin, I.N.; Yudin, F.P.; Rakov, N.A.

    1978-01-01

    Speculations are presented on the development and organization of liquid radioactive waste underground disposal in deep water-bearing levels completely isolated from other levels and the surface. Major requirements are formulated that are laid down to low-, moderate-and high-radioactive wastes subject to the disposal. Geological and hydrological conditions as well as the scheme and design features of pilot field facilities are described, where works on high-active waste disposal were started in 1972. In 1972 and 1973 450 and 1050 m 3 of the wastes (7.5 and 53 MCi) respecrespectively were disposed. The first results of the pilot disposal and the 3-year surveillance over the plate-collector condition and the performance of the facilities have reaffirmed the feasibility, medical and radiation safety and economic attractiveness of the disposal of wastes with up to 10-25 Ci/l specific activity

  17. Deep uncertainty and broad heterogeneity in country-level social cost of carbon

    Science.gov (United States)

    Ricke, K.; Drouet, L.; Caldeira, K.; Tavoni, M.

    2017-12-01

    The social cost of carbon (SCC) is a commonly employed metric of the expected economic damages expected from carbon dioxide (CO2) emissions. Recent estimates of SCC range from approximately 10/tonne of CO2 to as much as 1000/tCO2, but these have been computed at the global level. While useful in an optimal policy context, a world-level approach obscures the heterogeneous geography of climate damages and vast differences in country-level contributions to global SCC, as well as climate and socio-economic uncertainties, which are much larger at the regional level. For the first time, we estimate country-level contributions to SCC using recent climate and carbon-cycle model projections, empirical climate-driven economic damage estimations, and information from the Shared Socio-economic Pathways. Central specifications show high global SCC values (median: 417 /tCO2, 66% confidence intervals: 168 - 793 /tCO2) with country-level contributions ranging from -11 (-8 - -14) /tCO2 to 86 (50 - 158) /tCO2. We quantify climate-, scenario- and economic damage- driven uncertainties associated with the calculated values of SCC. We find that while the magnitude of country-level social cost of carbon is highly uncertain, the relative positioning among countries is consistent. Countries incurring large fractions of the global cost include India, China, and the United States. The share of SCC distributed among countries is robust, indicating climate change winners and losers from a geopolitical perspective.

  18. Characterisation of retention properties of charge-trapping memory cells at low temperatures

    International Nuclear Information System (INIS)

    Yurchuk, E; Bollmann, J; Mikolajick, T

    2009-01-01

    The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more 'shallow' traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

  19. Characterisation of retention properties of charge-trapping memory cells at low temperatures

    Science.gov (United States)

    Yurchuk, E.; Bollmann, J.; Mikolajick, T.

    2009-09-01

    The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

  20. The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

    International Nuclear Information System (INIS)

    Flament, O.; Fleetwood, D.M.; Leray, J.L.; Paillet, P.; Riewe, L.C.; Winokur, P.S.

    1999-01-01

    Deep and shallow electron traps form in irradiated thermal SiO 2 as a natural response to hole transport and trapping. The density and stability of these defects are discussed, as are their implications for total-dose modeling

  1. Globalisation Trapped

    Directory of Open Access Journals (Sweden)

    João Caraça

    2017-05-01

    Full Text Available The promise of making society progress through the direct applications of science was finally fulfilled in the mid-20th century. Science progressed immensely, propelled by the effects of the two world wars. The first science-based technologies saw the daylight during the 1940s and their transformative power was such that neither the military, nor subsequently the markets, allowed science to return intact to its curiosity-driven nest. Technoscience was born then and (being progressively pulled away from curiosity-driven science was able to grow enormously, erecting a formidable structure of networks of institutions that impacted decisively on the economy. It is a paradox, or maybe a trap, that the fulfillment of science’s solemn promise of ‘transforming nature’ means seeing ourselves and our Western societies entangled in crises after crises with no clear outcome in view. A redistribution of geopolitical power is under way, along with the deployment of information and communication technologies, forcing dominant structures to oscillate, as knowledge about organization and methods, marketing, design, and software begins to challenge the role of technoscience as the main vector of economic growth and wealth accumulation. What ought to be done?

  2. The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

    Science.gov (United States)

    Cvikl, B.

    2010-01-01

    The closed solution for the internal electric field and the total charge density derived in the drift-diffusion approximation for the model of a single layer organic semiconductor structure characterized by the bulk shallow single trap-charge energy level is presented. The solutions for two examples of electric field boundary conditions are tested on room temperature current density-voltage data of the electron conducting aluminum/tris(8-hydroxyquinoline aluminum/calcium structure [W. Brütting et al., Synth. Met. 122, 99 (2001)] for which jexp∝Va3.4, within the interval of bias 0.4 V≤Va≤7. In each case investigated the apparent electron mobility determined at given bias is distributed within a given, finite interval of values. The bias dependence of the logarithm of their lower limit, i.e., their minimum values, is found to be in each case, to a good approximation, proportional to the square root of the applied electric field. On account of the bias dependence as incorporated in the minimum value of the apparent electron mobility the spatial distribution of the organic bulk electric field as well as the total charge density turn out to be bias independent. The first case investigated is based on the boundary condition of zero electric field at the electron injection interface. It is shown that for minimum valued apparent mobilities, the strong but finite accumulation of electrons close to the anode is obtained, which characterize the inverted space charge limited current (SCLC) effect. The second example refers to the internal electric field allowing for self-adjustment of its boundary values. The total electron charge density is than found typically to be of U shape, which may, depending on the parameters, peak at both or at either Alq3 boundary. It is this example in which the proper SCLC effect is consequently predicted. In each of the above two cases, the calculations predict the minimum values of the electron apparent mobility, which substantially

  3. Settling fluxes of U- and Th-series nuclides in the Bay of Bengal: Results from time-series sediment trap studies

    Digital Repository Service at National Institute of Oceanography (India)

    Sarin, M.M.; Krishnaswami, S.; Dalai, T.K.; Ramaswamy, V.; Ittekkot, V.

    their production. Enhanced particle aggregation in the intermediate waters, resuspension of "nascent" sedimentary material and focussing of particles in the region of the deep traps can all account for these observations. The particulate flux in the deep trap...

  4. Development of Human-level Decision Making Algorithm for NPPs through Deep Neural Networks : Conceptual Approach

    International Nuclear Information System (INIS)

    Kim, Seung Geun; Seong, Poong Hyun

    2017-01-01

    Development of operation support systems and automation systems are closely related to machine learning field. However, since it is hard to achieve human-level delicacy and flexibility for complex tasks with conventional machine learning technologies, only operation support systems with simple purposes were developed and high-level automation related studies were not actively conducted. As one of the efforts for reducing human error in NPPs and technical advance toward automation, the ultimate goal of this research is to develop human-level decision making algorithm for NPPs during emergency situations. The concepts of SL, RL, policy network, value network, and MCTS, which were applied to decision making algorithm for other fields are introduced and combined with nuclear field specifications. Since the research is currently at the conceptual stage, more research is warranted.

  5. Deep layer-resolved core-level shifts in the beryllium surface

    DEFF Research Database (Denmark)

    Aldén, Magnus; Skriver, Hans Lomholt; Johansson, Börje

    1993-01-01

    Core-level energy shifts for the beryllium surface region are calculated by means of a Green’s function technique within the tight-binding linear muffin-tin orbitals method. Both initial- and final-state effects in the core-ionization process are fully accounted for. Anomalously large energy shifts...

  6. China's deep geological disposal program for high level radioactive waste, background and status 1998

    International Nuclear Information System (INIS)

    Ju Wang; Xu Guoqing; Guo Yonghai

    2001-01-01

    This paper presents the background and progress made in the study of China's high level radioactive waste, including site screening, site evaluation, the study on radionuclide migration, bentonite, natural analogue studies, and performance assessment, etc. The study on Beishan area, the potential area for China's geological repository, is also presented in this paper. (author)

  7. The application of the csamt method in the tectonic transformation of the deep-level fore exploration in the shandongkeng area in Nanxiong basin

    International Nuclear Information System (INIS)

    Xu Zhan

    2010-01-01

    With the national policy efforts on the strengthening of mining exploration, uranium exploration has also ushered in its second s pring . The topic of the new round exploration is P rospect the deeply minerals . Therefore, the changes of the deep structure of the mining area are the premise to carry out survey work. This article states briefly the working principle and characteristics of CSAMT method. The Application of the CSAMT Method in the Tectonic Transformation of The Deep-Level Exploration in the Shangdongkeng area in Nanxiong basin expresses that the method has a good application and effectiveness in research of deep geological objectives. It provides design basis for the mining exploration of deep-level area. (authors)

  8. Escaping the tolerance trap

    International Nuclear Information System (INIS)

    Hammoudeh, S.; Madan, V.

    1994-01-01

    In order to examine the implications of the weakening of OPEC's responsiveness in adjusting its production levels, this paper explicitly incorporates rigidity in the quantity adjustment mechanism, thereby extending previous research which assumed smooth quantity adjustments. The rigidity is manifested in a tolerance range for the discrepancy between the declared target price and that of the market. This environment gives rise to a 'tolerance trap' which impedes the convergence process and inevitably brings the market to a standstill before its reaches the targeted price and revenue objectives. OPEC's reaction to the standstill has important implications for the achievement of the target-based equilibrium and for the potential collapse of the market price. This paper examines OPEC's policy options in the tolerance trap and reveals that the optional policy in order to break this impasse and move closer to the equilibrium point is gradually to reduce output and not to flood the market. (Author)

  9. Cryogenic surface ion traps

    International Nuclear Information System (INIS)

    Niedermayr, M.

    2015-01-01

    Microfabricated surface traps are a promising architecture to realize a scalable quantum computer based on trapped ions. In principle, hundreds or thousands of surface traps can be located on a single substrate in order to provide large arrays of interacting ions. To this end, trap designs and fabrication methods are required that provide scalable, stable and reproducible ion traps. This work presents a novel surface-trap design developed for cryogenic applications. Intrinsic silicon is used as the substrate material of the traps. The well-developed microfabrication and structuring methods of silicon are utilized to create simple and reproducible traps. The traps were tested and characterized in a cryogenic setup. Ions could be trapped and their life time and motional heating were investigated. Long ion lifetimes of several hours were observed and the measured heating rates were reproducibly low at around 1 phonon per second at a trap frequency of 1 MHz. (author) [de

  10. Bulk derivatization and direct injection of human cerebrospinal fluid for trace-level quantification of endogenous estrogens using trap-and-elute liquid chromatography with tandem mass spectrometry.

    Science.gov (United States)

    Fan, Hui; Papouskova, Barbora; Lemr, Karel; Wigginton, Jane G; Schug, Kevin A

    2014-08-01

    Although there are existing methods for determining estrogen in human bodily fluids including blood plasma and serum, very little information is available regarding estrogen levels in human cerebrospinal fluid (CSF), which is critical to assess in studies of neuroprotective functions and diffusion of neuroprotective estrogens across the blood-brain barrier. To address this problem, a liquid chromatography with tandem mass spectrometry method for the simultaneous quantification of four endogenous estrogens (estrone, 17α-estradiol, 17β-estradiol, and estriol) in human CSF was developed. An aliquot (300 μL) of human CSF was bulk derivatized using dansyl chloride in the sample and 10 μL was directly injected onto a restricted-access media trap column for protein removal. No off-line sample extraction or cleanup was needed. The limits of detection of estrone, 17α-estradiol, 17β-estradiol, and estriol were 17, 28, 13, and 30 pg/mL, respectively, which is in the parts-per-trillion regime. The method was then applied to human CSF collected from ischemic trauma patients. Endogenous estrogens were detected and quantified, demonstrating the effectiveness of this method. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. The case for deep-sea disposal of low-level solid radioactive wastes

    International Nuclear Information System (INIS)

    Lewis, J.B.

    1983-01-01

    The scientific justification for the sea disposal of low-level solid radioactive wastes is summarized and the relevant national and international codes of practice and legislation are outlined. It is concluded that, since the amount of radioactivity disposed of in the oceans is very small compared with the natural radioactivity, the environmental hazard is small and sea dumping could be increased. (U.K.)

  12. Disposal of high level and long lived radioactive waste in deep geological formation

    International Nuclear Information System (INIS)

    Niezborala, J.M.; Hoorelbeke, J.M.

    2000-01-01

    The status of ANDRA's research program on high level and long lived waste corresponds to the start of construction of the Meuse/Haute-Marne Underground Research Laboratory in an argillite layer, as well as to the selection in 1999 of preliminary disposal concepts corresponding to this layer. The paper describes the preliminary concepts dealing with transuranic waste, high level vitrified waste and potentially disposed spent fuel. Provision is made for a high level of flexibility, in particular with regard to options of reversibility of the disposal process, and to potential evolutions of the waste inventory. These concepts were selected for research purpose to assess by the year 2006 the feasibility of a potential repository, with.respect in particular to safety rules. The paper mentions the research targets of the program aiming at answering major scientific and technological questions raised by the concepts. The program includes the fitting and validation of the modelling, on the basis in particular of the experimental work to be carried out in the Underground Research Laboratory, making it possible to dimension the disposal concepts and to assess their safety. (authors)

  13. A preliminary study on the geochemical environment for deep geological disposal of high level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Yong Kwon; Park, Byoung Yun

    2000-03-01

    Geochemical study on the groundwater from crystalline rocks (granite and gneiss) for the deep geological disposal of high-level radioactive waste was carried out in order to elucidate the hydrogeochemical and isotope characteristics and geochemical evolution of the groundwater. Study areas are Jungwon, Chojeong, Youngcheon and Yusung for granite region, Cheongyang for gneiss region, and Yeosu for volcanic region. Groundwaters of each study areas weree sampled and analysed systematically. Groundwaters can be grouped by their chemistry and host rock. Origin of the groundwater was proposed by isotope ( 18 O, 2 H, 13 C, 34 S, 87 Sr, 15 N) studies and the age of groundwater was inferred from their tritium contents. Based ont the geochemical and isotope characteristics, the geochemical evolutions of each types of groundwater were simulated using SOLVEQ/CHILLER and PHREEQC programs

  14. Decommissioning of surface facilities associated with repositories for the deep geological disposal of high-level nuclear wastes

    International Nuclear Information System (INIS)

    Heckman, R.A.

    1978-11-01

    A methodology is presented in this paper to evaluate the decommissioning of the surface facilities associated with repositories for the deep geological disposal of high-level nuclear wastes. A cost/risk index (figure of merit), expressed as $/manrem, is proposed as an evaluation criteria. On the basis of this cost/risk index, we gain insight into the advisability of adapting certain decontamination design options into the original facility. Three modes are considered: protective storage, entombment, and dismantlement. Cost estimates are made for the direct labor involved in each of the alternative modes for a baseline design case. Similarly, occupational radiation exposures are estimated, with a larger degree of uncertainty, for each of the modes. Combination of these estimates produces the cost/risk index. To illustrate the methodology, an example using a preliminary baseline repository design is discussed

  15. Predicted peak temperature-rises around a high-level radioactive waste canister emplaced in the deep ocean bed

    International Nuclear Information System (INIS)

    Kipp, K.L.

    1978-06-01

    A simple mathematical model of heat conduction was used to evaluate the peak temperature-rise along the wall of a canister of high-level radioactive waste buried in deep ocean sediment. Three different amounts of vitrified waste, corresponding to standard Harvest, large Harvest, and AVM canisters, and three different waste loadings were studied. Peak temperature-rise was computed for the nine cases as a function of canister geometry and storage time between reprocessing and burial. Lower waste loadings or longer storage times than initially envisaged are necessary to prevent the peak temperature-rise from exceeding 200 0 C. The use of longer, thinner cylinders only modestly reduces the storage time for a given peak temperature. Effects of stacking of waste canisters and of close-packing were also studied. (author)

  16. A preliminary study on the geochemical environment for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Yong Kwon; Park, Byoung Yun

    2000-03-01

    Geochemical study on the groundwater from crystalline rocks (granite and gneiss) for the deep geological disposal of high-level radioactive waste was carried out in order to elucidate the hydrogeochemical and isotope characteristics and geochemical evolution of the groundwater. Study areas are Jungwon, Chojeong, Youngcheon and Yusung for granite region, Cheongyang for gneiss region, and Yeosu for volcanic region. Groundwaters of each study areas weree sampled and analysed systematically. Groundwaters can be grouped by their chemistry and host rock. Origin of the groundwater was proposed by isotope ({sup 18}O, {sup 2}H, {sup 13}C, {sup 34}S, {sup 87}Sr, {sup 15}N) studies and the age of groundwater was inferred from their tritium contents. Based ont the geochemical and isotope characteristics, the geochemical evolutions of each types of groundwater were simulated using SOLVEQ/CHILLER and PHREEQC programs.

  17. Containers and overpacks for high-level radioactive waste in deep geological disposal. Conditions: French Corrosion Programme

    International Nuclear Information System (INIS)

    Crusset, D.; Plas, F.; Santarini, G.

    2003-01-01

    Within the framework of the act of French law dated 31 December, 1991, ANDRA (National Radioactive Waste Management Agency) is responsible for conducting the feasibility study on disposal of reversible and irreversible high-level or long-life radioactive waste in deep geological formations. Consequently, ANDRA is carrying out research on corrosion of the metallic materials envisaged for the possible construction of overpacks for vitrified waste packages or containers for spent nuclear fuel. Low-alloy or unalloyed steels and the passive alloys (Fe-Ni-Cr-Mo) constitute the two families of materials studied and ANDRA has set up a research programme in partnership with other research organisations. The 'broad outlines' of the programme, which includes experimental and modelling operations, are presented. (authors)

  18. A preliminary study on the regional fracture systems for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Young Kown; Park, Byoung Yoon [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2000-03-01

    For the deep geological disposal of high-level radioactive waste, it is essential to characterize the fracture system in rock mass which has a potential pathways of nuclide. Currently, none of research results are in classification and detailed properties for the fracture system in Korea. This study aims to classify and describe the regional fracture system in lithological and geotectonical point of view using literature review, shaded relief map, and aeromagnetic survey data. This report contains the following: - Theoretical review of the fracture development mechanism. - Overall fault and fracture map. - Geological description on the distributional characteristics of faults and fractures(zone) in terms of lithological domain and tectonical province. 122 refs., 22 figs., 4 tabs. (Author)

  19. Interactive Sea Level Rise App & Online Viewer Offers Deep Dive Into Climate

    Science.gov (United States)

    Turrin, M.; Porter, D. F.; Ryan, W. B. F.; Pfirman, S. L.

    2015-12-01

    Climate has captured the attention of the public but its complexity can cause interested individuals to turn to opinion pieces, news articles or blogs for information. These platforms often oversimplify or present heavily interpreted or personalized perspectives. Data interactives are an extremely effective way to explore complex geoscience topics like climate, opening windows of understanding for the user that have previously been closed. Layering data onto maps through programs like GeoMapApp and the Earth Observer App has allowed users to dig directly into science data, but with only limited scaffolding. The interactive 'Polar Explorer: Sea Level Explorer App' provides a richly layered introduction to a range of topics connected to sea level rise. Each map is supported with a pop up and a short audio file of supplementary material, and an information page that includes the data source and links for further reading. This type of learning platform works well for both the formal and informal learning environment. Through science data displayed as map visualizations the user is invited into topics through an introductory question, such as "Why does sea level change?" After clicking on that question the user moves to a second layer of questions exploring the role of the ocean, the atmosphere, the contribution from the world's glaciers, world's ice sheets and other less obvious considerations such as the role of post-glacial rebound, or the mining of groundwater. Each question ends in a data map, or series of maps, that offer opportunities to interact with the topic. Under the role of the ocean 'Internal Ocean Temperature' offers the user a chance to touch to see temperature values spatially over the world's ocean, or to click through a data series starting at the ocean surface and diving to 5000 meters of depth showing how temperature changes with depth. Other sections, like the role of deglaciation of North America, allow the user to click and see change through

  20. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    Science.gov (United States)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  1. Role of waste packages in the safety of a high level waste repository in a deep geological formation

    International Nuclear Information System (INIS)

    Bretheau, F.; Lewi, J.

    1990-06-01

    The safety of a radioactive waste disposal facility lays on the three following barriers placed between the radioactive materials and the biosphere: the waste package; the engineered barriers; the geological barrier. The function assigned to each of these barriers in the performance assessment is an option taken by the organization responsible for waste disposal management (ANDRA in France), which must show that: expected performances of each barrier (confinement ability, life-time, etc.) are at least equal to those required to fulfill the assigned function; radiation protection requirements are met in all situations considered as credible, whether they be the normal situation or random event situations. The French waste management strategy is based upon two types of disposal depending on the nature and activity of waste packages: - surface disposal intended for low and medium level wastes having half-lives of about 30 years or less and alpha activity less than 3.7 MBq/kg (0.1 Ci/t), for individual packages and less than 0.37 MBq/kg (0.01 Ci/t) in the average. Deep geological disposal intended for TRU and high level wastes. The conditions of acceptance of packages in a surface disposal site are subject to the two fundamental safety rules no. I.2 and III.2.e. The present paper is only dealing with deep geological disposal. For deep geological repositories, three stages are involved: stage preceding definitive disposal (intermediate storage, transportation, handling, setting up in the disposal cavities); stage subsequent to definitive sealing of the disposal cavities but prior to the end of operation of the repository; stage subsequent to closure of the repository. The role of the geological barrier has been determined as the essential part of long term radioactivity confinement, by a working group, set up by the French safety authorities. Essential technical criteria relating to the choice of a site so defined by this group, are the following: very low permeability

  2. Ecological risk assessment of deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Hart, D.R.; Lush, D.L.; Acton, D.W.

    1993-01-01

    Contaminant fate and transport models, radiological dosimetry models, chemical dose-response models and population dynamic models were used to estimate ecological risks to moose and brook trout populations arising from a proposed high-level nuclear waste repository. Risks from potential contaminant releases were compared with risks from physical habitat alteration in constructing a repository and service community, and with risks from increased hunting and fish pressure in the area. For a reference environment typical of a proposed location somewhere in the Canadian Shield, preliminary results suggest that the population consequences of contaminant release will be minor relative to those of habitat alteration and natural resource use

  3. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    International Nuclear Information System (INIS)

    Costin, L.S.

    1997-10-01

    In this paper, the major elements of the site selection and characterization processes used in the US high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the US program, these processes, which are well defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the US program

  4. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    International Nuclear Information System (INIS)

    Costin, L.S.

    1997-01-01

    In this paper, the major elements of the site selection and characterization processes used in the U. S. high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the U. S. program, these processes, which are well-defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the U. S. program. (author). 3 refs., 2 tabs., 5 figs

  5. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    Energy Technology Data Exchange (ETDEWEB)

    Costin, L.S. [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-31

    In this paper, the major elements of the site selection and characterization processes used in the U. S. high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the U. S. program, these processes, which are well-defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the U. S. program. (author). 3 refs., 2 tabs., 5 figs.

  6. Positron-trapping mechanism at dislocations in Zn

    DEFF Research Database (Denmark)

    Hidalgo, Carlos; Linderoth, Søren; Diego, Nieves de

    1987-01-01

    the average lifetime and the intensity of the long component decrease with increasing temperature. The experimental results are very well described in terms of a generalized trapping model where it is assumed that positrons become trapped in deep traps (jogs) via shallow traps (dislocation lines......). The temperature dependence of the positron-lifetime spectra below 120 K is attributed to the temperature dependence of the trapping rate to the dislocation line. The experimental results have demonstrated that detrapping processes from the dislocation line take place above 120 K. The positron binding energy...

  7. Review of statistical analysis of trapped gas

    International Nuclear Information System (INIS)

    Schmittroth, F.A.

    1996-01-01

    A review was conducted of trapped gas estimates in Hanford waste tanks. Tank waste levels were found to correlate with barometric pressure changes giving the possibility to infer amounts of trapped gas. Previous models of the tank waste level were extended to include other phenomena such as evaporation in a more complete description of tank level changes

  8. Thermal effects on clay rocks for deep disposal of high-level radioactive waste

    Directory of Open Access Journals (Sweden)

    Chun-Liang Zhang

    2017-06-01

    Full Text Available Thermal effects on the Callovo-Oxfordian and Opalinus clay rocks for hosting high-level radioactive waste were comprehensively investigated with laboratory and in situ experiments under repository relevant conditions: (1 stresses covering the range from the initial lithostatic state to redistributed levels after excavation, (2 hydraulic drained and undrained boundaries, and (3 heating from ambient temperature up to 90 °C–120 °C and a subsequent cooling phase. The laboratory experiments were performed on normal-sized and large hollow cylindrical samples in various respects of thermal expansion and contraction, thermally-induced pore water pressure, temperature influences on deformation and strength, thermal impacts on swelling, fracture sealing and permeability. The laboratory results obtained from the samples are consistent with the in situ observations during heating experiments in the underground research laboratories at Bure and Mont-Terri. Even though the claystones showed significant responses to thermal loading, no negative effects on their favorable barrier properties were observed.

  9. Leach behavior of high-level borosilicate glasses under deep geological environment

    International Nuclear Information System (INIS)

    Kim, Seung Soo; Chun, Kwan Sik; Park, Hyun Soo

    1998-02-01

    This report presents an overview of the activities in high-level radioactive waste glass which is considered as the most practicable form of waste, and also is intended to be used in the disposal of national high-level radioactive waste in future. Leach theory of waste glass and the leach effects of ground water, metal barrier, buffer materials and rocks on the waste glass were reviewed. The leach of waste glass was affected by various factors such as composition, pH and Eh of ground water, temperature, pressure, radiation and humic acid. The crystallization, crack, weathering and the formation of altered phases of waste glass which is expected to occur in real disposal site were reviewed. The results of leaching in laboratory and in-situ were compared. The behaviors of radioactive elements leached from waste glass and the use of basalt glass for the long-term natural analogue of waste glass were also written in this report. The appraisal of durability of borosilicate waste glass as a waste media was performed from the known results of leach test and international in-situ tests were introduced. (author). 134 refs., 15 tabs., 24 figs

  10. Status of THe-Trap

    Energy Technology Data Exchange (ETDEWEB)

    Streubel, Sebastian; Eronen, Tommi; Hoecker, Martin; Ketter, Jochen; Blaum, Klaus [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Van Dyck, Robert S. Jr. [Department of Physics, University of Washington, Seattle, WA (United States)

    2013-07-01

    THe-Trap (short for Tritium-{sup 3}He Trap) is a Penning-trap setup dedicated to measure the {sup 3}H to {sup 3}He mass-ratio with a relative uncertainty of better than 10{sup -11}. The ratio is of relevance for the KArlsruhe TRItium Neutrino experiment (KATRIN), which aims to measure the electron anti-neutrino mass, by measuring the shape of the β-decay energy spectrum close to its endpoint. An independent measurement of the {sup 3}H to {sup 3}He mass-ratio pins down this endpoint, and thus will help to determine the systematics of KATRIN. The trap setup consists of two Penning-traps: One trap for precision measurements, the other trap for ion storage. Ideally, the trap content will be periodically switched, which reduces the time between the measurements of the two ions' motional frequencies. In 2012, a mass ratio measurement of {sup 12}C{sup 4+} to {sup 14}N{sup 5+} was performed to characterize systematic effects of the traps. This measurement yielded a accuracy of 10{sup -9}. Further investigations revealed that a major reason for the modest accuracy is the large axial amplitude of ∼100 μm, compared to a ideal case of 3 μm at 4 K. In addition, relative magnetic fluctuations at a 3 x 10{sup -10} level on a 10 h timescale need to be significantly improved. In this contribution, the aforementioned findings and further systematic studies will be presented.

  11. Low-cost, high-precision micro-lensed optical fiber providing deep-micrometer to deep-nanometer-level light focusing.

    Science.gov (United States)

    Wen, Sy-Bor; Sundaram, Vijay M; McBride, Daniel; Yang, Yu

    2016-04-15

    A new type of micro-lensed optical fiber through stacking appropriate high-refractive microspheres at designed locations with respect to the cleaved end of an optical fiber is numerically and experimentally demonstrated. This new type of micro-lensed optical fiber can be precisely constructed with low cost and high speed. Deep micrometer-scale and submicrometer-scale far-field light spots can be achieved when the optical fibers are multimode and single mode, respectively. By placing an appropriate teardrop dielectric nanoscale scatterer at the far-field spot of this new type of micro-lensed optical fiber, a deep-nanometer near-field spot can also be generated with high intensity and minimum joule heating, which is valuable in high-speed, high-resolution, and high-power nanoscale detection compared with traditional near-field optical fibers containing a significant portion of metallic material.

  12. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  13. Dumping of low-level radioactive waste in the deep ocean

    International Nuclear Information System (INIS)

    Templeton, W.L.

    1980-01-01

    Two international agreements relate to the dumping of packaged radioactive waste into the oceans - the Convention on the Prevention of Marine Pollution by Dumping Wastes and Other Matter of 1972 (London Convention) and the Multilateral Consultation and Surveillance Mechanism for Sea Dumping of Radioactive Waste of 1977 under the Organization for Economic Co-operation and Development (OECD). The International Atomic Energy Agency was given the responsibility to define high-level radioactive wastes which are unsuitable for dumping in the oceans and to make recommendations for the dumping of other radioactive wastes. A revised Definition and Recommendations was submitted and accepted by the London Convention. This paper reviews the technical basis for the Definition and describes how it has been applied to the radiological assessment of the only operational dumping site in the North East Atlantic

  14. Greedy Deep Dictionary Learning

    OpenAIRE

    Tariyal, Snigdha; Majumdar, Angshul; Singh, Richa; Vatsa, Mayank

    2016-01-01

    In this work we propose a new deep learning tool called deep dictionary learning. Multi-level dictionaries are learnt in a greedy fashion, one layer at a time. This requires solving a simple (shallow) dictionary learning problem, the solution to this is well known. We apply the proposed technique on some benchmark deep learning datasets. We compare our results with other deep learning tools like stacked autoencoder and deep belief network; and state of the art supervised dictionary learning t...

  15. Chronic Deep Brain Stimulation of the Hypothalamic Nucleus in Wistar Rats Alters Circulatory Levels of Corticosterone and Proinflammatory Cytokines

    Science.gov (United States)

    Calleja-Castillo, Juan Manuel; De La Cruz-Aguilera, Dora Luz; Manjarrez, Joaquín; Velasco-Velázquez, Marco Antonio; Morales-Espinoza, Gabriel; Moreno-Aguilar, Julia; Hernández, Maria Eugenia; Aguirre-Cruz, Lucinda

    2013-01-01

    Deep brain stimulation (DBS) is a therapeutic option for several diseases, but its effects on HPA axis activity and systemic inflammation are unknown. This study aimed to detect circulatory variations of corticosterone and cytokines levels in Wistar rats, after 21 days of DBS-at the ventrolateral part of the ventromedial hypothalamic nucleus (VMHvl), unilateral cervical vagotomy (UCVgX), or UCVgX plus DBS. We included the respective control (C) and sham (S) groups (n = 6 rats per group). DBS treated rats had higher levels of TNF-α (120%; P < 0.01) and IFN-γ (305%; P < 0.001) but lower corticosterone concentration (48%; P < 0.001) than C and S. UCVgX animals showed increased corticosterone levels (154%; P < 0.001) versus C and S. UCVgX plus DBS increased IL-1β (402%; P < 0.001), IL-6 (160%; P < 0.001), and corsticosterone (178%; P < 0.001 versus 48%; P < 0.001) compared with the C and S groups. Chronic DBS at VMHvl induced a systemic inflammatory response accompanied by a decrease of HPA axis function. UCVgX rats experienced HPA axis hyperactivity as result of vagus nerve injury; however, DBS was unable to block the HPA axis hyperactivity induced by unilateral cervical vagotomy. Further studies are necessary to explore these findings and their clinical implication. PMID:24235973

  16. SPRAYED CLAY TECHNOLOGY FOR THE DEEP REPOSITORY OF HIGH-LEVEL RADIOACTIVE WASTE

    Directory of Open Access Journals (Sweden)

    Lucie Hausmannová

    2012-07-01

    Full Text Available The sealing barrier will play very important role in the Czech disposal concept of high level radioactive waste. It follows Swedish SKB3 design where granitic rock environment will host the repository. Swelling clay based materials as the most favorable for sealing purposes were selected. Such clays must fulfill certain requirements (e.g. on swelling properties, hydraulic conductivity or plasticity and must be stable for thousands of years. Better sealing behavior is obtained when the clay is compacted. Technology of the seal construction can vary according to its target dry density. Very high dry density is needed for buffer (sealing around entire canister with radioactive waste. Less strict requirements are on material backfilling the access galleries. It allows compaction to lower dry density than in case of buffer. One of potential technology for backfilling is to compact clay layers in most of the gallery profile by common compaction machines (rollers etc. and to spray clay into the uppermost part afterwards. The paper introduces the research works on sprayed clay technology performed at the Centre of Experimental Geotechnics of the Czech Technical University in Prague. Large scale in situ demonstration of filling of short drift in the Josef Gallery is also mentioned.

  17. Hydrogeologic modelling in support of a proposed Deep Geologic Repository in Canada for low and intermediate level radioactive waste

    Energy Technology Data Exchange (ETDEWEB)

    Sykes, J.F.; Normani, S.D.; Yin, Y. [Waterloo Univ., ON (Canada). Dept. of Civil and Environmental Engineering; Sykes, E.A.; Jensen, M.R. [Nuclear Waste Management Organization, Toronto, ON (Canada)

    2009-07-01

    Ontario Power Generation (OPG) has proposed the construction of a Deep Geologic Repository (DGR) for low and intermediate level radioactive waste at the Bruce site on the shore of Lake Huron near Tiverton, Ontario. The DGR is to be excavated at a depth of about 680 m within argillaceous limestones of Ordovician age. A saturated regional-scale and site-scale numerical modelling study has been completed in order to evaluate the safety of storing radioactive waste at the site and to better understand the geochemistry and hydrogeology of the formations surrounding the proposed DGR. This paper reported on the regional-scale base-case modelling and analysis of the measured pressure profile in deep boreholes at the DGR site. The numerical modelling study provided a framework to investigate the groundwater flow system as it relates to, and potentially affects, the safety and long-term performance of the DGR. A saturated groundwater flow model was also developed using FRAC3DVS-OPG. The objective of regional-scale groundwater modelling of the Paleozoic sedimentary sequence underlying southwestern Ontario was to provide a basis for the assembly and integration of site-specific geoscientific data and to explain the influence of parameter and scenario uncertainty on predicted long-term geosphere barrier performance. The base-case analysis showed that solute transport in the Ordovician and lower Silurian is diffusion dominant. For the base-case parameters, the estimated mean life expectancy for the proposed DGR is more than 8 million years. The possible presence of a gas phase in the rock between the Cambrian and the Niagaran was not considered in the analyses of this paper. 9 refs., 2 tabs., 10 figs.

  18. The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

    2015-07-15

    Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

  19. Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Amin, G.; Hussain, I.; Zaman, S.; Bano, N.; Nur, O.; Willander, M. [Department of Science and Technology, Campus Norrkoeping, Linkoeping University, 60174 Norrkoeping (Sweden)

    2010-03-15

    High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V{sub TFL}) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for the NTs were obtained as {proportional_to}0.27 eV and 2.1 x 10{sup 16} cm{sup -3}, respectively. The same parameters were also extracted for the ZnO NRs. The deep-level states observed crossponds to zinc interstitials (Zn{sub i}), which are responsible for the violet emission. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Thermal evolution and exhumation of deep-level batholithic exposures, southernmost Sierra Nevada, California

    Science.gov (United States)

    Saleeby, J.; Farley, K.A.; Kistler, R.W.; Fleck, R.J.

    2007-01-01

    The Tehachapi complex lies at the southern end of the Sierra Nevada batholith adjacent to the Neogene-Quaternary Garlock fault. The complex is composed principally of high-pressure (8-10 kbar) Cretaceous batholithic rocks, and it represents the deepest exposed levels of a continuous oblique crustal section through the southern Sierra Nevada batholith. Over the southern ???100 km of this section, structural/petrologic continuity and geochronological data indicate that ???35 km of felsic to intermediate-composition crust was generated by copious arc magmatism primarily between 105 and 99 Ma. In the Tehachapi complex, these batholithic rocks intrude and are bounded to the west by similar-composition gneissic-textured high-pressure batholithic rocks emplaced at ca. 115-110 Ma. This lower crustal complex is bounded below by a regional thrust system, which in Late Cretaceous time tectonically eroded the underlying mantle lithosphere, and in series displaced and underplated the Rand Schist subduction assemblage by low-angle slip from the outboard Franciscan trench. Geophysical and mantle xenolith studies indicate that the remnants of this shallow subduction thrust descend northward through the crust and into the mantle, leaving the mantle lithosphere intact beneath the greater Sierra Nevada batholith. This north-dipping regional structure records an inflection in the Farallon plate, which was segmented into a shallow subduc-tion trajectory to the south and a normal steeper trajectory to the north. We combine new and published data from a broad spectrum of thermochronom-eters that together form a coherent data array constraining the thermal evolution of the complex. Integration of these data with published thermobarometric and petro-genetic data also constrains the tectonically driven decompression and exhumation history of the complex. The timing of arc magmatic construction of the complex, as denoted above, is resolved by a large body of U/Pb zircon ages. High

  1. Deep Uncertainties in Sea-Level Rise and Storm Surge Projections: Implications for Coastal Flood Risk Management.

    Science.gov (United States)

    Oddo, Perry C; Lee, Ben S; Garner, Gregory G; Srikrishnan, Vivek; Reed, Patrick M; Forest, Chris E; Keller, Klaus

    2017-09-05

    Sea levels are rising in many areas around the world, posing risks to coastal communities and infrastructures. Strategies for managing these flood risks present decision challenges that require a combination of geophysical, economic, and infrastructure models. Previous studies have broken important new ground on the considerable tensions between the costs of upgrading infrastructure and the damages that could result from extreme flood events. However, many risk-based adaptation strategies remain silent on certain potentially important uncertainties, as well as the tradeoffs between competing objectives. Here, we implement and improve on a classic decision-analytical model (Van Dantzig 1956) to: (i) capture tradeoffs across conflicting stakeholder objectives, (ii) demonstrate the consequences of structural uncertainties in the sea-level rise and storm surge models, and (iii) identify the parametric uncertainties that most strongly influence each objective using global sensitivity analysis. We find that the flood adaptation model produces potentially myopic solutions when formulated using traditional mean-centric decision theory. Moving from a single-objective problem formulation to one with multiobjective tradeoffs dramatically expands the decision space, and highlights the need for compromise solutions to address stakeholder preferences. We find deep structural uncertainties that have large effects on the model outcome, with the storm surge parameters accounting for the greatest impacts. Global sensitivity analysis effectively identifies important parameter interactions that local methods overlook, and that could have critical implications for flood adaptation strategies. © 2017 Society for Risk Analysis.

  2. RNA deep sequencing reveals novel candidate genes and polymorphisms in boar testis and liver tissues with divergent androstenone levels.

    Directory of Open Access Journals (Sweden)

    Asep Gunawan

    Full Text Available Boar taint is an unpleasant smell and taste of pork meat derived from some entire male pigs. The main causes of boar taint are the two compounds androstenone (5α-androst-16-en-3-one and skatole (3-methylindole. It is crucial to understand the genetic mechanism of boar taint to select pigs for lower androstenone levels and thus reduce boar taint. The aim of the present study was to investigate transcriptome differences in boar testis and liver tissues with divergent androstenone levels using RNA deep sequencing (RNA-Seq. The total number of reads produced for each testis and liver sample ranged from 13,221,550 to 33,206,723 and 12,755,487 to 46,050,468, respectively. In testis samples 46 genes were differentially regulated whereas 25 genes showed differential expression in the liver. The fold change values ranged from -4.68 to 2.90 in testis samples and -2.86 to 3.89 in liver samples. Differentially regulated genes in high androstenone testis and liver samples were enriched in metabolic processes such as lipid metabolism, small molecule biochemistry and molecular transport. This study provides evidence for transcriptome profile and gene polymorphisms of boars with divergent androstenone level using RNA-Seq technology. Digital gene expression analysis identified candidate genes in flavin monooxygenease family, cytochrome P450 family and hydroxysteroid dehydrogenase family. Moreover, polymorphism and association analysis revealed mutation in IRG6, MX1, IFIT2, CYP7A1, FMO5 and KRT18 genes could be potential candidate markers for androstenone levels in boars. Further studies are required for proving the role of candidate genes to be used in genomic selection against boar taint in pig breeding programs.

  3. A review of the predictive modelling and data requirements for the long-term safety assessment of the deep disposal of low and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Broyd, T.W.

    1988-06-01

    This report considers the Her Majesty's Inspectorate of Pollution research and modelling requirements for a robust post-closure radiological risk assessment methodology applicable to the deep disposal of Low-Level Wastes and Intermediate-Level Wastes. Two disposal concepts have been envisaged: horizontal tunnels or galleries in a low permeability stratum of a sedimentary sequence located inland; vertical boreholes or shafts up to 15m diameter lined with concrete and of the order 500m to 1000m deep sunk into the seabed within territorial coastal waters of the United Kingdom. (author)

  4. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    Science.gov (United States)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  5. Shrew trap efficiency

    DEFF Research Database (Denmark)

    Gambalemoke, Mbalitini; Mukinzi, Itoka; Amundala, Drazo

    2008-01-01

    We investigated the efficiency of four trap types (pitfall, Sherman LFA, Victor snap and Museum Special snap traps) to capture shrews. This experiment was conducted in five inter-riverine forest blocks in the region of Kisangani. The total trapping effort was 6,300, 9,240, 5,280 and 5,460 trap......, our results indicate that pitfall traps are the most efficient for capturing shrews: not only do they have a higher efficiency (yield), but the taxonomic diversity of shrews is also higher when pitfall traps are used....

  6. Trapped Inflation

    Energy Technology Data Exchange (ETDEWEB)

    Green, Daniel; Horn, Bart; /SLAC /Stanford U., Phys. Dept.; Senatore, Leonardo; /Princeton, Inst. Advanced Study /Harvard U., Phys. Dept. /Harvard-Smithsonian Ctr. Astrophys.; Silverstein, Eva; /SLAC /Stanford U., Phys. Dept.

    2009-06-19

    We analyze a distinctive mechanism for inflation in which particle production slows down a scalar field on a steep potential, and show how it descends from angular moduli in string compactifications. The analysis of density perturbations - taking into account the integrated effect of the produced particles and their quantum fluctuations - requires somewhat new techniques that we develop. We then determine the conditions for this effect to produce sixty e-foldings of inflation with the correct amplitude of density perturbations at the Gaussian level, and show that these requirements can be straightforwardly satisfied. Finally, we estimate the amplitude of the non-Gaussianity in the power spectrum and find a significant equilateral contribution.

  7. Siting, design and construction of a deep geological repository for the disposal of high level and alpha bearing wastes

    International Nuclear Information System (INIS)

    1990-06-01

    The main objective of this document is to summarize the basic principles and approaches to siting, design and construction of a deep geological repository for disposal of high level and alpha bearing radioactive wastes, as commonly agreed upon by Member States. This report is addressed to decision makers and technical managers as well as to specialists planning for siting, design and construction of geological repositories for disposal of high level and alpha bearing wastes. This document is intended to provide Member States of the IAEA with a summary outline for the responsible implementing organizations to use for siting, designing and constructing confinement systems for high level and alpha bearing radioactive waste in accordance with the protection objectives set by national regulating authorities or derived from safety fundamentals and standards of the IAEA. The protection objectives will be achieved by the isolation of the radionuclides from the environment by a repository system, which consists of a series of man made and natural safety barriers. Engineered barriers are used to enhance natural geological containment in a variety of ways. They must complement the natural barriers to provide adequate safety and necessary redundancy to the barrier system to ensure that safety standards are met. Because of the long timescales involved and the important role of the natural barrier formed by the host rock, the site selection process is a key activity in the repository design and development programme. The choice of the site, the investigation of its geological setting, the exploration of the regional hydrogeological setting and the primary underground excavations are all considered to be part of the siting process. 16 refs

  8. DeepPy: Pythonic deep learning

    DEFF Research Database (Denmark)

    Larsen, Anders Boesen Lindbo

    This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

  9. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  10. The role of surface and deep-level defects on the emission of tin oxide quantum dots

    International Nuclear Information System (INIS)

    Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

    2014-01-01

    This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

  11. The potential of natural analogues in assessing systems for deep disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Chapman, N.A.; Smellie, J.A.T.

    1984-08-01

    Many of the processes which will lead to the breakdown of engineered barriers and the mobilisation of radionuclides in a deep waste repository have analogies in natural geological systems. These 'natural analogues' are seen as a particularly important means of validating predictive models, under the broad heading of radionuclide migration, which are used in long-term safety analyses. Their principal value is the opportunity they provide to examine processes occurring over geological timescales, hence allowing more confident extrapolation of short timescales experimental data. This report begins by reviewing the processes leading to breakdown of containment in a high-level radioactive waste repository in crystalline bedrock and the subsequent migration mechanisms for radionuclides back to the biosphere. Nine specific processes are identified as being of the most significance in migration models, based on available sensitivity analyses. Existing studies are assessed and possibilities considered for additional analogues. Conclusions are drawn for each process as to the extent to which analogues validate current predictions on scale and effect, longevity of function, etc. Where possible, quantitative evaluations are given, derived from analogue studies. A considerable amount of the information reviewed and presented could be used in the assessment of disposal of other waste types in other host rocks. (Auth.)

  12. OPG's deep geologic repository for low and intermediate level waste - public participation and aboriginal engagement

    International Nuclear Information System (INIS)

    Wilson, M.

    2011-01-01

    Ontario Power Generation (OPG)'s Public Participation and Aboriginal Engagement Program for the proposed Deep Geologic Repository (DGR) for low and intermediate level waste (L and ILW) began with the signing of a Memorandum of Understanding (MOU) in 2002 between OPG and the Municipality of Kincardine. The MOU set out the terms under which the two parties would jointly study the feasibility of different options for the long-term management of L and ILW at the Bruce nuclear site. A consultant, independent from both the Municipality of Kincardine and OPG, was retained to manage the assessment of options as well as a communication plan to ensure the public and Aboriginal peoples were kept apprised of all activities associated with the MOU. This early commitment to transparency and openness, with its ensuing opportunities for the public and Aboriginal peoples to become informed, ask questions, and engage in meaningful two-way dialogue about the early assessment of options, established the foundation and later became the hallmark of the DGR Project's Public Participation and Aboriginal Engagement program. This paper provides an overview of the development, nature and results of that program as it has evolved through the early investigative stages of options and through the environmental assessment and licencing process for the proposed DGR Project. (author)

  13. The OPG/Kincardine hosting agreement for a deep geologic repository for OPG's low- and intermediate-level waste

    International Nuclear Information System (INIS)

    Castellan, A.G.; Barker, D.E.

    2006-01-01

    A Hosting Agreement has been reached between Ontario Power Generation and the Municipality of Kincardine for the purpose of siting a long-term management facility for low- and intermediate-level radioactive waste at the Western Waste Management Facility. Following an independent review of the feasibility of three options for a long-term facility at the site, including a review of the safety, geotechnical feasibility, social and economic effects and potential environmental effects, Kincardine passed a resolution indicating their preference for a Deep Geologic Repository. A Host Community Agreement has been negotiated based on this preference, and on information that had been gathered from municipal authorities at other locations that have hosted similar facilities. The Hosting Agreement includes financial compensation, totalling $35.7 million (Canadian 2004) to the Municipality of Kincardine and to four surrounding municipalities. The financial aspects include lump sum payments based on achieving specific project milestones as well as annual payments to each of the municipalities. The payments are indexed to inflation, and are also contingent on the municipalities acting reasonably and in good faith during the licencing process of the proposed facility. In addition to the fees, the Agreement includes provision for a Property Value Protection Plan that would provide residents with compensation in the event that there is depreciation in property value shown to directly result from a release from the proposed facility. New permanent OPG jobs supporting the project would be located at the site. OPG and Kincardine will support a centre of nuclear excellence. (author)

  14. Antimatter Plasmas in a Multipole Trap for Antihydrogen

    CERN Document Server

    Andresen, G B; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

    2007-01-01

    We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

  15. Antimatter plasmas in a multipole trap for antihydrogen.

    Science.gov (United States)

    Andresen, G; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

    2007-01-12

    We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

  16. The hydrogeologic environment for a proposed deep geologic repository in Canada for low and intermediate level radioactive waste - 59285

    International Nuclear Information System (INIS)

    Sykes, Jonathan F.; Normani, Stefano D.; Yin, Yong; Jensen, Mark R.

    2012-01-01

    A Deep Geologic Repository (DGR) for low and intermediate level radioactive waste has been proposed by Ontario Power Generation for the Bruce nuclear site in Ontario, Canada. As proposed the DGR would be constructed at a depth of about 680 m below ground surface within the argillaceous Ordovician limestone of the Cobourg Formation. This paper describes the hydrogeology of the DGR site developed through both site characterization studies and regional-scale numerical modelling analysis. The analysis provides a framework for the assembly and integration of the site-specific geo-scientific data and examines the factors that influence the predicted long-term performance of the geosphere barrier. Flow system evolution was accomplished using both the density-dependent FRAC3DVS-OPG flow and transport model and the two-phase gas and water flow computational model TOUGH2-MP. In the geologic framework of the Province of Ontario, the DGR is located on the eastern flank of the Michigan Basin. Borehole logs covering Southern Ontario combined with site-specific data from 6 deep boreholes have been used to define the structural contours and hydrogeologic properties at the regional-scale of the modelled 31 sedimentary strata that may be partially present above the Precambrian crystalline basement rock. The regional-scale domain encompasses an approximately 18500 km 2 region extending from Lake Huron to Georgian Bay. The groundwater zone below the Devonian includes units containing stagnant water having high concentrations of total dissolved solids that can exceed 300 g/L. The Ordovician sediments are significantly under-pressured. The horizontal hydraulic conductivity for the Cobourg limestone is estimated to be 2x10 -14 m/s based on straddle-packer hydraulic tests. The low advective velocities in the Cobourg and other Ordovician units result in solute transport that is diffusion dominant with Peclet numbers less than 0:003 for a characteristic length of unity. Long

  17. Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

    International Nuclear Information System (INIS)

    Thilderkvist, A. L.

    1994-02-01

    The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

  18. Long-term degradation of organic polymers under conditions found in deep repositories for low and intermediate-level wastes

    International Nuclear Information System (INIS)

    Warthmann, R.; Mosberger, L.; Baier, U.

    2013-06-01

    On behalf of Nagra, the Environmental Biotechnology Section of the Zürich University of Applied Sciences in Wädenswil investigated the potential for microbiological degradation of organic polymers under the conditions found in a deep geological repository for low- and intermediate-level waste (L/ILW). The existing scientific literature on the topic was analysed, some thermodynamic calculations carried out and input was elicited from internationally recognised experts in the field. The study was restricted to a few substances which, in terms of mass, are most significant in the Swiss L/ILW inventory; these are polystyrene (PS), polyvinyl chloride (PVC), other plastics and bitumen. There were no clear indications in the literature that the polymer structure of synthetic polymers is biodegraded under anoxic conditions. However, functional groups of ion exchangers and plasticizers in plastics are considered to be readily available and biodegradable. The greatest obstacle to biological degradation of synthetic polymers is depolymerisation to produce labile monomers. As energy is generally required for such breakdown, the chances of this process taking place outside the cells are very low. In so far as they are present, monomers are, in principle, anaerobically biodegradable. Thermodynamic considerations indicate that degradation of synthetic polymers under repository conditions is theoretically possible. However, the degradation of polystyrene is very close to thermodynamic equilibrium and the usable energy for microorganisms would barely be sufficient. Under high H2 partial pressures, it is predicted that there will be a thermodynamic inhibition of anaerobic degradation, as certain interim steps in degradation are endergonic. The starting conditions for microbial growth in a deep repository are unfavourable in terms of availability of water and prevailing pH values. Practically no known microorganisms can tolerate the combination of these conditions; most known

  19. Reconciling the sea level record of the last deglaciation with the δ18O spectra from deep sea cores

    International Nuclear Information System (INIS)

    Bard, Edouard; Columbia Univ., Palisades, NY; Arnold, Maurice; Duplessy, J.-C.

    1991-01-01

    In this paper we use the oxygen isotope record as a transient tracer to study palaeoceanography during the last deglaciation. By using 14 C and 18 O data obtained on four deep sea sediment cores, we show the presence of a measurable lag between the deglacial δ 18 O signal observed in the deep Atlantic and the deep Indo-Pacific oceans. Our study confirms that the major meltwater discharge occurred via the North Atlantic and that the thermohaline circulation was operating during the deglacial transition. (Author)

  20. MECHANISMS OF MANTLE‐CRUST INTERACTION AT DEEP LEVELS OF COLLISION OROGENS (CASE OF THE OLKHON REGION, WEST PRIBAIKALIE

    Directory of Open Access Journals (Sweden)

    A. G. Vladimirov

    2017-01-01

    zones, which is fol‐ lowed by metamorphic magma mingling under viscous deformation conditions. The mafic magmas intruding to the level of the granulite facies facilitated the deep anatexis and formation of synmetamorphic hypersthene plagiogranites (U‐Pb isotope dating: 500–490 Ma and high‐K stress granites. In the Chernorud granulite zone, intense ductile‐plastic and brittle‐plastic deformations accompanied the processes of metamorphism, intrusion and formation of gabbro‐ pyroxenites and the anatexis of the crustal substance. As a result, the intrusive bodies were fragmented, and specific tectonic structures termed ‘metamorphic magma‐mingling’ were formed. All the tectonic and magmatic structures were subsequently ‘sealed up’ by K‐Na synkinematic granites at the regressive stage under conditions of the amphibo‐ lite‐facies metamorphism (U‐Pb and Ar‐Ar isotope dating: 470–460 Ma.

  1. St. Croix trap study

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The data set contains detailed information about the catch from 600 trap stations around St. Croix. Data fields include species caught, size data, trap location...

  2. Maximum flood hazard assessment for OPG's deep geologic repository for low and intermediate level waste

    International Nuclear Information System (INIS)

    Nimmrichter, P.; McClintock, J.; Peng, J.; Leung, H.

    2011-01-01

    Ontario Power Generation (OPG) has entered a process to seek Environmental Assessment and licensing approvals to construct a Deep Geologic Repository (DGR) for Low and Intermediate Level Radioactive Waste (L&ILW) near the existing Western Waste Management Facility (WWMF) at the Bruce nuclear site in the Municipality of Kincardine, Ontario. In support of the design of the proposed DGR project, maximum flood stages were estimated for potential flood hazard risks associated with coastal, riverine and direct precipitation flooding. The estimation of lake/coastal flooding for the Bruce nuclear site considered potential extreme water levels in Lake Huron, storm surge and seiche, wind waves, and tsunamis. The riverine flood hazard assessment considered the Probable Maximum Flood (PMF) within the local watersheds, and within local drainage areas that will be directly impacted by the site development. A series of hydraulic models were developed, based on DGR project site grading and ditching, to assess the impact of a Probable Maximum Precipitation (PMP) occurring directly at the DGR site. Overall, this flood assessment concluded there is no potential for lake or riverine based flooding and the DGR area is not affected by tsunamis. However, it was also concluded from the results of this analysis that the PMF in proximity to the critical DGR operational areas and infrastructure would be higher than the proposed elevation of the entrance to the underground works. This paper provides an overview of the assessment of potential flood hazard risks associated with coastal, riverine and direct precipitation flooding that was completed for the DGR development. (author)

  3. Decontamination by replacing soil and soil cover with deep-level soil in flower beds and vacant places in Northern Fukushima Prefecture

    International Nuclear Information System (INIS)

    Sugiura, Hiroyuki; Kawano, Keisuke; Kayama, Yukihiko; Koube, Nobuyuki

    2012-01-01

    Radioactivity decontamination by replacing soil and soil cover with deep-level soil and soil cover in flower beds and a vacant place in Northern Fukushima Prefecture were studied, which experienced radioactive contamination due to the accident at the TEPCO's Fukushima Daiichi Nuclear Power Plant. Radioactivity counting rate 1 cm above the soil surface after replacing surface soil with uncontaminated deep-level soil decreased to 13.7% of the control in gardens. The concentration of radioactive cesium in the cover soil increased after 132 days; however, it decreased in the old surface soil under the cover soil in flower beds. A 10 cm deep-level soil cover placed by heavy machinery decreased the radiation dose rate to 70.8% of the control and radioactivity counting rate to 24.6% in the vacant place. Replacing the radioactively contaminated surface soil and soil cover with a deep-level soil was a reasonable decontamination method for the garden and vacant place because it is quick, cost effective and labour efficient. (author)

  4. Angular trap for macroparticles

    International Nuclear Information System (INIS)

    Aksyonov, D.S.

    2013-01-01

    Properties of angular macroparticle traps were investigated in this work. These properties are required to design vacuum arc plasma filters. The correlation between trap geometry parameters and its ability to absorb macroparticles were found. Calculations allow one to predict the behaviour of filtering abilities of separators which contain such traps in their design. Recommendations regarding the use of angular traps in filters of different builds are given.

  5. Characterisation of hole traps in GaAs Fets by DLTS, low frequency noise and g sub M dispersion methods

    International Nuclear Information System (INIS)

    Iqbal, M.A.; Kaya, L.; Jones, B.K.

    1997-01-01

    Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

  6. How to detect trap cluster systems?

    International Nuclear Information System (INIS)

    Mandowski, Arkadiusz

    2008-01-01

    Spatially correlated traps and recombination centres (trap-recombination centre pairs and larger clusters) are responsible for many anomalous phenomena that are difficult to explain in the framework of both classical models, i.e. model of localized transitions (LT) and the simple trap model (STM), even with a number of discrete energy levels. However, these 'anomalous' effects may provide a good platform for identifying trap cluster systems. This paper considers selected cluster-type effects, mainly relating to an anomalous dependence of TL on absorbed dose in the system of isolated clusters (ICs). Some consequences for interacting cluster (IAC) systems, involving both localized and delocalized transitions occurring simultaneously, are also discussed

  7. Optical Trapping of Ion Coulomb Crystals

    Science.gov (United States)

    Schmidt, Julian; Lambrecht, Alexander; Weckesser, Pascal; Debatin, Markus; Karpa, Leon; Schaetz, Tobias

    2018-04-01

    The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

  8. Final disposal of high-level radioactive waste in deep boreholes. An evaluation based on recent research on the bedrock at great depths

    International Nuclear Information System (INIS)

    Aahaell, Karl-Inge

    2006-05-01

    New knowledge in hydrogeology and boring technology have opened the possibility to use deep boreholes as a repository for the Swedish high-level radioactive wastes. The determining property is that the repository can be housed in the stable bedrock at levels where the ground water has no contact with the biosphere and disposal and sealing can take place without disturbing the ground water stratification outside the disposal area. An advantage compared to a shallow repository of KBS-3 type, that is now being planned in Sweden, is that a borehole repository is likely to be technologically more robust, since the concept 'deep boreholes' seems to admit such a deep disposal that the entire disposal area would be surrounded by stable density-layered ground water, while a KBS-3 repository would be surrounded by moving ground water in contact with level close to the surface. This hydrological difference is of great importance for the safety in scenarios with leaching of radioactive substances. A deep repository is also less vulnerable for effects from natural events such as glaciation and earthquakes as well as from technological mishaps and terrorist actions. A crucial factor is, however, that the radioactive waste can be disposed of, in a secure way, at the intended depth, which will require new research and technology development

  9. Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

    International Nuclear Information System (INIS)

    Simimol, A.; Manikandanath, N. T.; Chowdhury, Prasanta; Barshilia, Harish C.; Anappara, Aji A.

    2014-01-01

    Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T A  = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V O ), zinc interstitial (Zn i ), and oxygen interstitial (O i ) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T A greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T A  ≥ 450 °C in the oxygen and air environments, the density of O i defects increased, whereas, the green emission associated with V O is dominant in the vacuum annealed (T A  = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications

  10. The potential of natural analogues in assessing systems for deep disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Chapman, N.A.; McKinley, I.G.; Smellie, J.A.T.

    1984-08-01

    Many of the processes which will lead to the breakdown of engineered barriers and the mobilization of radionuclides in a deep waste repository have analogies in natural geological systems. These 'natural analogues' are seen as a particularly important means of validating predictive models, under the broad heading of radionuclide migration, which are used in long-term safety analyses. Their principal value is the opportunity they provide to examine processes occurring over geological timescales, hence allowing more confident extrapolation of short timescales experimental data. This report begins by reviewing the processes leading to breakdown of containment in a high-level radioactive waste repository in crystalline bedrock and the subsequent migration mechanisms for radionuclides back to the biosphere. Nine specific processes are identified as being of the most significance in migration models, based on available sensitivity analyses. These processes are considered separately in detail, reviewing first the mechanisms involved and the most important unknown then the types of natural analogue which could most usefully provide supporting evidence for the effects of the process. Conclusions are drawn, for each process as to the extent to which analogues validate current predictions on scale and effect, longevity of function, etc. Where possible, quantitative evaluations are given, derived from analogue studies. A summary is provided of the conclusions for each process, and the most important topics for further studies are listed. Specific examples of these requisite analogues are given. The report emphasises throughout the importance of linking analogues to well defined processes, concluding that analogues of complete disposal systems do not exist. The results are seen to be widely applicable. A considerable amount of the information reviewed and presented could be used in the assessment of disposal of other waste types in other host rocks. (Author)

  11. Automatic abdominal multi-organ segmentation using deep convolutional neural network and time-implicit level sets.

    Science.gov (United States)

    Hu, Peijun; Wu, Fa; Peng, Jialin; Bao, Yuanyuan; Chen, Feng; Kong, Dexing

    2017-03-01

    Multi-organ segmentation from CT images is an essential step for computer-aided diagnosis and surgery planning. However, manual delineation of the organs by radiologists is tedious, time-consuming and poorly reproducible. Therefore, we propose a fully automatic method for the segmentation of multiple organs from three-dimensional abdominal CT images. The proposed method employs deep fully convolutional neural networks (CNNs) for organ detection and segmentation, which is further refined by a time-implicit multi-phase evolution method. Firstly, a 3D CNN is trained to automatically localize and delineate the organs of interest with a probability prediction map. The learned probability map provides both subject-specific spatial priors and initialization for subsequent fine segmentation. Then, for the refinement of the multi-organ segmentation, image intensity models, probability priors as well as a disjoint region constraint are incorporated into an unified energy functional. Finally, a novel time-implicit multi-phase level-set algorithm is utilized to efficiently optimize the proposed energy functional model. Our method has been evaluated on 140 abdominal CT scans for the segmentation of four organs (liver, spleen and both kidneys). With respect to the ground truth, average Dice overlap ratios for the liver, spleen and both kidneys are 96.0, 94.2 and 95.4%, respectively, and average symmetric surface distance is less than 1.3 mm for all the segmented organs. The computation time for a CT volume is 125 s in average. The achieved accuracy compares well to state-of-the-art methods with much higher efficiency. A fully automatic method for multi-organ segmentation from abdominal CT images was developed and evaluated. The results demonstrated its potential in clinical usage with high effectiveness, robustness and efficiency.

  12. Antihydrogen Formation, Dynamics and Trapping

    CERN Document Server

    Butler, Eoin; Charlton, Michael

    2011-01-01

    Antihydrogen, the simplest pure-antimatter atomic system, holds the promise of direct tests of matter-antimatter equivalence and CPT invariance, two of the outstanding unanswered questions in modern physics. Antihydrogen is now routinely produced in charged-particle traps through the combination of plasmas of antiprotons and positrons, but the atoms escape and are destroyed in a minuscule fraction of a second. The focus of this work is the production of a sample of cold antihydrogen atoms in a magnetic atom trap. This poses an extreme challenge, because the state-of-the-art atom traps are only approximately 0.5 K deep for ground-state antihydrogen atoms, much shallower than the energies of particles stored in the plasmas. This thesis will outline the main parts of the ALPHA experiment, with an overview of the important physical processes at work. Antihydrogen production techniques will be described, and an analysis of the spatial annihilation distribution to give indications of the temperature and binding ene...

  13. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  14. E-beam irradiation effect on CdSe/ZnSe QD formation by MBE: deep level transient spectroscopy and cathodoluminescence studies

    International Nuclear Information System (INIS)

    Kozlovsky, V I; Litvinov, V G; Sadofyev, Yu G

    2004-01-01

    CdSe/ZnSe structures containing 1 or 15 thin (3-5 monolayers) CdSe layers were studied by cathodoluminescence (CL) and deep level transient spectroscopy (DLTS). The DLTS spectra consisted of peaks from deep levels (DLs) and an additional intense peak due to electron emission from the ground quantized level in the CdSe layers. Activation energy of this additional peak correlated with an energy of the CdSe-layer emission line in the CL spectra. Electron-beam irradiation of the structure during the growth process was found to influence the DLTS and CL spectra of the CdSe layers, shifting the CdSe-layer emission line to the long-wave side. The obtained results are explained using the assumption that e-beam irradiation stimulates the formation of quantum dots of various sizes in the CdSe layers

  15. Deep bore well water level fluctuations in the Koyna region, India: the presence of a low order dynamical system in a seismically active environment

    Directory of Open Access Journals (Sweden)

    D. V. Ramana

    2009-05-01

    Full Text Available Water level fluctuations in deep bore wells in the vicinity of seismically active Koyna region in western India provides an opportunity to understand the causative mechanism underlying reservoir-triggered earthquakes. As the crustal porous rocks behave nonlinearly, their characteristics can be obtained by analysing water level fluctuations, which reflect an integrated response of the medium. A Fractal dimension is one such measure of nonlinear characteristics of porous rock as observed in water level data from the Koyna region. It is inferred in our study that a low nonlinear dynamical system with three variables can predict the water level fluctuations in bore wells.

  16. A Computer Model of Insect Traps in a Landscape

    Science.gov (United States)

    Manoukis, Nicholas C.; Hall, Brian; Geib, Scott M.

    2014-11-01

    Attractant-based trap networks are important elements of invasive insect detection, pest control, and basic research programs. We present a landscape-level, spatially explicit model of trap networks, focused on detection, that incorporates variable attractiveness of traps and a movement model for insect dispersion. We describe the model and validate its behavior using field trap data on networks targeting two species, Ceratitis capitata and Anoplophora glabripennis. Our model will assist efforts to optimize trap networks by 1) introducing an accessible and realistic mathematical characterization of the operation of a single trap that lends itself easily to parametrization via field experiments and 2) allowing direct quantification and comparison of sensitivity between trap networks. Results from the two case studies indicate that the relationship between number of traps and their spatial distribution and capture probability under the model is qualitatively dependent on the attractiveness of the traps, a result with important practical consequences.

  17. Hydrogeologic modelling in support of a proposed deep geologic repository in Canada for low and intermediate level radioactive waste - 16264

    International Nuclear Information System (INIS)

    Sykes, Jonathan F.; Normani, Stefano D.; Yin, Yong; Sykes, Eric A.; Jensen, Mark R.

    2009-01-01

    A Deep Geologic Repository (DGR) for Low and Intermediate Level radioactive waste has been proposed by Ontario Power Generation for the Bruce Nuclear Power Development site in Ontario, Canada. The DGR is to be constructed at a depth of about 680 m below ground surface within the argillaceous Ordovician limestone of the Cobourg Formation. This paper describes a regional-scale geologic conceptual model for the DGR site and analyzes flow system evolution using the FRAC3DVSOPG flow and transport model. This provides a framework for the assembly and integration of site-specific geo-scientific data that explains and illustrates the factors that influence the predicted long-term performance of the geosphere barrier. In the geologic framework of the Province of Ontario, the Bruce DGR is located at the eastern edge of the Michigan Basin. Borehole logs covering Southern Ontario combined with site specific data have been used to define the structural contours at the regional and site scale of the 31 sedimentary strata that may be present above the Precambrian crystalline basement rock. The regional-scale domain encompasses an 18.500 km 2 region extending from Lake Huron to Georgian Bay. The groundwater zone below the Devonian is characterized by units containing stagnant water having high concentrations of total dissolved solids that can exceed 300 g/l. The computational sequence involves the calculation of steady-state density independent flow that is used as the initial condition for the determination of pseudo-equilibrium for a density dependent flow system that has an initial TDS distribution developed from observed data. Long-term simulations that consider future glaciation scenarios include the impact of ice thickness and permafrost. The selection of the performance measure used to evaluate a groundwater system is important. The traditional metric of average water particle travel time is inappropriate for geologic units such as the Ordovician where solute transport is

  18. Final deposition of high-level nuclear waste in very deep boreholes. An evaluation based on recent research of bedrock conditions at great depths

    International Nuclear Information System (INIS)

    Aahaell, Karl-Inge

    2007-01-01

    This report evaluates the feasibility of very deep borehole disposal of high-level nuclear waste, e.g., spent nuclear fuel, in the light of recent technological developments and research on the characteristics of bedrock at extreme depths. The evaluation finds that new knowledge in the field of hydrogeology and technical advances in drilling technology have advanced the possibility of using very deep boreholes (3-5 km) for disposal of the Swedish nuclear waste. Decisive factors are (1) that the repository can be located in stable bedrock at a level where the groundwater is isolated from the biosphere, and (2) that the waste can be deposited and the boreholes permanently sealed without causing long-term disturbances in the density-stratification of the groundwater that surrounds the repository. Very deep borehole disposal might offer important advantage compared to the relatively more shallow KBS approach that is presently planned to be used by the Swedish nuclear industry in Sweden, in that it has the potential of being more robust. The reason for this is that very deep borehole disposal appears to permit emplacement of the waste at depths where the entire repository zone would be surrounded by stable, density-stratified groundwater having no contact with the surface, whereas a KBS-3 repository would be surrounded by upwardly mobile groundwater. This hydro-geological difference is a major safety factor, which is particularly apparent in all scenarios that envisage leakage of radioactive substances. Another advantage of a repository at a depth of 3 to 5 km is that it is less vulnerable to impacts from expected events (e.g., changes in groundwater conditions during future ice ages) as well as undesired events (e.g. such as terrorist actions, technical malfunction and major local earthquakes). Decisive for the feasibility of a repository based on the very deep borehole concept is, however, the ability to emplace the waste without failures. In order to achieve this

  19. Effect of insulin combined alendronate sodium on bone mineral density and levels of serum BAP, TRAP-5b and BGP in aged patients with type 2 diabetes mellitus with osteoporosis

    Directory of Open Access Journals (Sweden)

    Fang Wang

    2016-06-01

    Full Text Available Objective: To explore the effect of insulin combined alendronate sodium on bone mineral density and levels of serum BAP, TRAP-5b and BGP in aged patients with type 2 diabetes mellitus with osteoporosis. Methods: A total of 136 patients with type 2 diabetes mellitus with osteoporosis in January 2014 to January 2016 in our hospital for the treatment were selected, and randomly divided into 4 groups, each of 40 cases. Caltrate D was given as a basic treatment to all the patients, and the control group was given the treatment of insulin, and the metformin group was given the treatment of metformin, and the combination group was given the treatment of metformin combined alendronate, and the experiment group was given the treatment of insulin combined alendronate. BMD of the femoral neck and the serum levels of BAP, TRAP-5b and BGP were detected and recorded before the treatment and after one year’s treatment. Results: On index of bone mineral density, the control group and the metformin group showed no significant differences; the combination group was slightly improved, but showed no statistical significance; After the treatment, the bone mineral density of the experiment was significantly improved. On index of bone turnover, the levels of serum BAP and BGP all had been improved and the level of TRAP-5b all was reduced then before the treatment in the control group, the combination group and the experiment group, but only the experiment group showed significant differences; On index of bone turnover, the experiment group were better than other groups, the differences were statistical significant. Conclusions: It has greater clinical curative effect that insulin combined alendronate sodium in the treatment of aged patients with type 2 diabetes mellitus with osteoporosis, it can effectively balance the metabolism of bone, safe and reliable, and it is worthy of application.

  20. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    Science.gov (United States)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  1. Ion Trap Quantum Computing

    Science.gov (United States)

    2011-12-01

    variations of ion traps, including (1) the cylindrically symmetric 3D ring trap; (2) the linear trap with a combination of cavity QED; (#) the symmetric...concepts of quantum information. The major demonstration has been the test of a Bell inequality as demonstrated by Rowe et al. [50] and a decoherence...famous physics experiment [62]. Wolfgang Paul demonstrated a similar apparatus during his Nobel Prize speech [63]. This device is hyperbolic- parabolic

  2. Towards trapped antihydrogen

    CERN Document Server

    Jorgensen, L V; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Page, R D; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

    2008-01-01

    Substantial progress has been made in the last few years in the nascent field of antihydrogen physics. The next big step forward is expected to be the trapping of the formed antihydrogen atoms using a magnetic multipole trap. ALPHA is a new international project that started to take data in 2006 at CERN’s Antiproton Decelerator facility. The primary goal of ALPHA is stable trapping of cold antihydrogen atoms to facilitate measurements of its properties. We discuss the status of the ALPHA project and the prospects for antihydrogen trapping.

  3. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Liu, Xianjie; Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

    2015-08-15

    Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  4. Hot, deep origin of petroleum: deep basin evidence and application

    Science.gov (United States)

    Price, Leigh C.

    1978-01-01

    Use of the model of a hot deep origin of oil places rigid constraints on the migration and entrapment of crude oil. Specifically, oil originating from depth migrates vertically up faults and is emplaced in traps at shallower depths. Review of petroleum-producing basins worldwide shows oil occurrence in these basins conforms to the restraints of and therefore supports the hypothesis. Most of the world's oil is found in the very deepest sedimentary basins, and production over or adjacent to the deep basin is cut by or directly updip from faults dipping into the basin deep. Generally the greater the fault throw the greater the reserves. Fault-block highs next to deep sedimentary troughs are the best target areas by the present concept. Traps along major basin-forming faults are quite prospective. The structural style of a basin governs the distribution, types, and amounts of hydrocarbons expected and hence the exploration strategy. Production in delta depocenters (Niger) is in structures cut by or updip from major growth faults, and structures not associated with such faults are barren. Production in block fault basins is on horsts next to deep sedimentary troughs (Sirte, North Sea). In basins whose sediment thickness, structure and geologic history are known to a moderate degree, the main oil occurrences can be specifically predicted by analysis of fault systems and possible hydrocarbon migration routes. Use of the concept permits the identification of significant targets which have either been downgraded or ignored in the past, such as production in or just updip from thrust belts, stratigraphic traps over the deep basin associated with major faulting, production over the basin deep, and regional stratigraphic trapping updip from established production along major fault zones.

  5. Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

    KAUST Repository

    Sun, Jingya; Yang, Yang; Khan, Jafar I.; Alarousu, Erkki; Guo, Zaibing; Zhang, Xixiang; Zhang, Qiang; Mohammed, Omar F.

    2014-01-01

    We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

  6. Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

    KAUST Repository

    Sun, Jingya

    2014-06-11

    We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

  7. Trapping cold ground state argon atoms.

    Science.gov (United States)

    Edmunds, P D; Barker, P F

    2014-10-31

    We trap cold, ground state argon atoms in a deep optical dipole trap produced by a buildup cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of cotrapped metastable argon atoms and determine an elastic cross section. Using a type of parametric loss spectroscopy we also determine the polarizability of the metastable 4s[3/2](2) state to be (7.3±1.1)×10(-39)  C m(2)/V. Finally, Penning and associative losses of metastable atoms in the absence of light assisted collisions, are determined to be (3.3±0.8)×10(-10)  cm(3) s(-1).

  8. Deep circulation in the Indian and Pacific Oceans and its implication for the dumping of low-level radioactive waste

    International Nuclear Information System (INIS)

    Harries, J.R.

    1980-06-01

    The complexity of ocean transport processes has meant that the limits for the dumping of low-activity radioactive wastes have had to be based on very simplified models of the oceans. This report discusses the models used to determine dumping limits and contrasts them with the known ocean circulation patterns. The deep circulations of the Indian and Pacific Oceans are reviewed to provide a basis for estimating the possible destinations and likely transit times for dissolved material released at the ocean floor

  9. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-01-01

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

  10. Charge generation and trapping in bisphenol-A-polycarbonate/N-isopropylcarbazole mixture: A study by electron bombardment-induced conductivity

    International Nuclear Information System (INIS)

    Santos, S.; Caraballo, D.

    2007-01-01

    Electron bombardment-induced conductivity measurements were carried out on cast films of N-isopropylcarbazole (NIPC) dispersed into an amorphous matrix of bisphenol-A-polycarbonate. The charge generation was studied by estimating the hole yield (g), the fraction of charge escaping recombination, as a function of electric field and concentration of NIPC at room temperature. The hole yield, besides increasing by increasing the content of NIPC, was observed to increase with the electric field in the manner predicted by the Onsager theory of geminate recombination. Deep trapping levels were studied by filling under electron bombardment and observing transients. The deep traps were neutral in nature with a concentration on the order of 8.0x10 14 cm -3 , which was low enough not to degrade transport under normal conditions

  11. Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Mooney, P. M.; Jiang, Zenan; Basile, A. F. [Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada); Zheng, Yongju; Dhar, Sarit [Physics Department, Auburn University, Auburn, Alabama 36849 (United States)

    2016-07-21

    To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

  12. Versatile electrostatic trap

    NARCIS (Netherlands)

    van Veldhoven, J.; Bethlem, H.L.; Schnell, M.; Meijer, G.

    2006-01-01

    A four electrode electrostatic trap geometry is demonstrated that can be used to combine a dipole, quadrupole, and hexapole field. A cold packet of ND315 molecules is confined in both a purely quadrupolar and hexapolar trapping field and additionally, a dipole field is added to a hexapole field to

  13. Liquid metal cold trap

    International Nuclear Information System (INIS)

    Hundal, R.

    1976-01-01

    A cold trap assembly for removing impurities from a liquid metal is described. A hole between the incoming impure liquid metal and purified outgoing liquid metal acts as a continuous bleed means and thus prevents the accumulation of cover gases within the cold trap assembly

  14. Feasibility of disposal of high-level radioactive waste into the seabed. volume 7: Review of laboratory investigations of radionuclide migration through deep-sea sediments

    International Nuclear Information System (INIS)

    Brush, L.H.

    1988-01-01

    One of the options suggested for disposal of high-level radioactive waste resulting from the generation of nuclear power is burial beneath the deep ocean floor in geologically stable sediment formations which have no economic value. The 8-volume series provides an assessment of the technical feasibility and radiological safety of this disposal concept based on the results obtained by ten years of co-operation and information exchange among the Member countries participating in the NEA Seabed Working Group. This volume contains a review of the laboratory investigations of radionuclide migration through deep-sea sediments. In addition, it discusses the data selected for the radiological assessment, on the basis of both field and laboratory studies

  15. Feasibility of disposal of high-level radioactive waste into the seabed. Volume 6: Deep-sea biology, biological processes and radiobiology

    International Nuclear Information System (INIS)

    Pentreath, R.J.; Hargrave, B.T.; Roe, H.S.J.; Sibuet, M.

    1988-01-01

    One of the options suggested for disposal of high-level radioactive waste resulting from the generation of nuclear power is burial beneath the deep ocean floor in geologically stable sediment formations which have no economic value. The 8-volume series provides an assessment of the technical feasibility and radiological safety of this disposal concept based on the results obtained by ten years of co-operation and information exchange among the Member countries participating in the NEA Seabed Working Group. This report summarizes the biological description of selected sites, the means by which radionuclides could result in human exposure via seafood pathways, and the doses likely to be received by, and effects on, the deep-sea fauna

  16. Trapping radioactive ions

    CERN Document Server

    Kluge, Heinz-Jürgen

    2004-01-01

    Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning.

  17. Trapping radioactive ions

    International Nuclear Information System (INIS)

    Kluge, H.-J.; Blaum, K.

    2004-01-01

    Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning

  18. Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhang, Z.; Arehart, A. R.; Hurni, C. A.; Speck, J. S.; Ringel, S. A.

    2012-01-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH 3 -MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at E C - 0.14 eV, E C - 0.21 eV, E C - 0.26 eV, E C - 0.62 eV, E C - 0.67 eV, E C - 2.65 eV, and E C - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at E C - 0.14 eV and E C - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at E C - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of E C - 2.65 eV and E C - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH 3 -MBE grown m-plane GaN.

  19. The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

    Science.gov (United States)

    Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

    2018-04-01

    We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

  20. Control of environmental impact of low-level aqueous fuel reprocessing wastes by deep-well disposal

    International Nuclear Information System (INIS)

    Trevorrow, L.E.; Steindler, M.J.

    1978-01-01

    The following conclusions are made: (1) the technology and much experience for this disposal method are available; (2) large areas of the U.S. offer geological formations suitable for deep well disposal, but substantial effort may be required in the choice of a specific site; (3) although costs are substantial, they are small compared to associated environmental and energy benefits; (4) impacts on water consumers would be minimized through regulatory checks of siting, construction, and monitoring, and also through natural dilution and radioactive decay; (5) disposal wells must satisfy regulations, of recently-increased stringency, on siting, design, construction, operation, monitoring, and decommissioning

  1. Eliminating degradation and uncovering ion-trapping dynamics in electrochromic WO3 thin films

    Science.gov (United States)

    Wen, Rui-Tao; Granqvist, Claes G.; Niklasson, Gunnar A.

    2015-01-01

    Amorphous WO3 thin films are of keen interest as cathodic electrodes in transmittance-modulating electrochromic devices. However, these films suffer from ion-trapping-induced degradation of optical modulation and reversibility upon extended Li+-ion exchange. Here, we demonstrate that ion-trapping-induced degradation, which is commonly believed to be irreversible, can be successfully eliminated by constant-current-driven de-trapping, i.e., WO3 films can be rejuvenated and regain their initial highly reversible electrochromic performance. Pronounced ion-trapping occurs when x exceeds ~0.65 in LixWO3 during ion insertion. We find two main kinds of Li+-ion trapping sites (intermediate and deep) in WO3, where the intermediate ones are most prevalent. Li+-ions can be completely removed from intermediate traps but are irreversibly bound in deep traps. Our results provide a general framework for developing and designing superior electrochromic materials and devices. PMID:26259104

  2. Technologies for Trapped-Ion Quantum Information Systems

    Science.gov (United States)

    2016-03-21

    we discuss work aiming to leverage a commer- cial CMOS (complementary metal-oxide- semiconductor ) process to develop an integrated ion trap architecture...this integration: alignment of optical elements with tiny modes to point emitters, and trap- ping charged particles close to dielectric surfaces. Inte...far by heating in several ways. The deep optical potentials required to confine a charged particle against stray fields impart significant recoil

  3. Development of an assessment methodology for the disposal of high-level radioactive waste into deep ocean sediments

    International Nuclear Information System (INIS)

    Murray, C.N.; Stanners, D.A.

    1982-01-01

    This paper presents the results of a theoretical study concerning the option of disposal of vitrified high activity waste (HAW) into deep ocean sediments. The development of a preliminary methodology is presented which concerns the assessment of the possible effects of a release of radioactivity on the ecosystem and eventually on man. As the long-term hazard is considered basically to be due to transuranic elements (and daughter products) the period studied for the assessment is from 10 3 to 10 6 years. A simple ecosystem model is developed so that the transfer of activity between different compartments of the systems, e.g. the sediment column, sediment-water interface, deep sea water column, can be estimated. A critical pathway analysis is made for an imaginary critical group in order to complete the assessment. A sensitivity analysis is undertaken using the computed minimum-maximum credible values for the different parameters used in the calculations in order to obtain a minimum-maximum dose range for a critical group. (Auth.)

  4. Nematode-Trapping Fungi.

    Science.gov (United States)

    Jiang, Xiangzhi; Xiang, Meichun; Liu, Xingzhong

    2017-01-01

    Nematode-trapping fungi are a unique and intriguing group of carnivorous microorganisms that can trap and digest nematodes by means of specialized trapping structures. They can develop diverse trapping devices, such as adhesive hyphae, adhesive knobs, adhesive networks, constricting rings, and nonconstricting rings. Nematode-trapping fungi have been found in all regions of the world, from the tropics to Antarctica, from terrestrial to aquatic ecosystems. They play an important ecological role in regulating nematode dynamics in soil. Molecular phylogenetic studies have shown that the majority of nematode-trapping fungi belong to a monophyletic group in the order Orbiliales (Ascomycota). Nematode-trapping fungi serve as an excellent model system for understanding fungal evolution and interaction between fungi and nematodes. With the development of molecular techniques and genome sequencing, their evolutionary origins and divergence, and the mechanisms underlying fungus-nematode interactions have been well studied. In recent decades, an increasing concern about the environmental hazards of using chemical nematicides has led to the application of these biological control agents as a rapidly developing component of crop protection.

  5. A reconsideration on deep sea bed disposal of high level radiological wastes. A post-Fukushima reflection on sustainable nuclear energy in Japan

    International Nuclear Information System (INIS)

    Yoshikawa, Hidekazu

    2013-01-01

    The ultimate disposal of high-level radioactive waste (HLW) is a common issue among all nuclear developing countries. However, this becomes especially a hard issue for sustainable nuclear energy in Japan after Fukushima Daiichi accident. In this paper, the difficulty of realizing underground HLW disposal in Japanese islands is first discussed from socio-political aspects. Then, revival of old idea of deep seabed disposal of HLW in Pacific Ocean is proposed as an alternative way of HLW disposal. Although this old idea had been abandoned in the past for the reason that it would violate London Convention which prohibits dumping radioactive wastes in public sea, the author will stress the merit of seabed disposal of HLW deep in Pacific Ocean not only from the view point of more safe and ultimate way of disposing HLWs (both vitrified and spent fuel) than by underground disposal, but also the emergence of new marine project by synergetic collaboration of rare-earth resource exploration from the deep sea floor in Pacific Ocean. (author)

  6. Optical Trapping of Ion Coulomb Crystals

    Directory of Open Access Journals (Sweden)

    Julian Schmidt

    2018-05-01

    Full Text Available The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

  7. Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs

    Science.gov (United States)

    Ringel, S. A.; Chatterjee, B.

    1994-01-01

    In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

  8. Trapping processes in CaS:Eu2+,Tm3+

    International Nuclear Information System (INIS)

    Jia, Dongdong; Jia, Weiyi; Evans, D. R.; Dennis, W. M.; Liu, Huimin; Zhu, Jing; Yen, W. M.

    2000-01-01

    CaS:Eu 2+ ,Tm 3+ is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm 3+ for Ca 2+ , serve as hole traps for the afterglow at room temperature. Tm 3+ plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu 2+ ions. These two processes, in which two different sites of Tm 3+ are involved, correspond to two traps with different depths. (c) 2000 American Institute of Physics

  9. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    Directory of Open Access Journals (Sweden)

    Hatim Alnoor

    2015-08-01

    Full Text Available Hexagonal c-axis oriented zinc oxide (ZnO nanorods (NRs with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL spectra were collected for all samples. Cathodoluminescence (CL spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE to the deep-level emission (DLE peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h, which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  10. A Methodology to analyze the biosphere in the assessment of deep geological repositories for high level radioactive waste

    International Nuclear Information System (INIS)

    Pinedo, P.; Smith, G.

    1996-11-01

    This report summarizes the work done and the achievements reached within the R and D Project that IMA/CIEMAT has had with ENRESA during 1993-1995. The overall R and D Project has a wide radiological protection context, but the work reported here relates only to the development of a Methodology for considering the Biosphere sub-system in the assessments of deep geological repositories for high radioactive wastes (HLW). The main areas concerned within the Methodology have to do with the Biosphere structure and morphology in the long-term relevant to deep disposal of HLW: in the contexts of the assessment of these systems, and appropriate modelling of the behaviour of radionuclides released to the biosphere system and with the associated human exposure. This document first provides a review of the past and present international and national concerns about the biosphere modelling and its importance in relation to the definition of safety criteria. A joint ENRESA/ANDRA/IPSN/CIEMAT study about the definition and practical descriptions of the biosphere systems under different climatic states is then summarized. The Methodology developed by IMA/CIEMAT is outlined with an illustration of the way it works. Different steps and procedures are included for a better practical understanding of the software tools developed within the project to support the application of the Methodology. This methodology is widely based on an international working group on ''Reference Biospheres'', part of the BIOMOVS II Project. Specific software developments have been carried out in collaboration with Qunti Sci Itd and with the Polytechnical University of Madrid. (Author)

  11. Traps in Zirconium Alloys Oxide Layers

    Directory of Open Access Journals (Sweden)

    Helmar Frank

    2005-01-01

    Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

  12. The evolving UK strategy for the management of intermediate level waste to enable disposal to a deep geological repository - a UKAEA/BNFL/NIREX perspective

    International Nuclear Information System (INIS)

    Wratten, A.J.; Allan, D.F.; Palmer, J.D.

    1996-01-01

    The objective of this paper is to describe the development of BNFL's and UKAEA's strategies for managing Intermediate Level Waste (ILW) against the background of the evolving national strategy. The impact of the loss of the sea disposal route is addressed together with the challenge of designing waste conditioning plants in parallel with the evolving technical specification for the Nirex deep repository. What has been achieved and is Planned in terms of plant provisioning is described, together with the lessons that have been learned in striving to achieve optimum design solutions. (author)

  13. Trapping and Probing Antihydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Wurtele, Jonathan [UC Berkeley and LBNL

    2013-03-27

    Precision spectroscopy of antihydrogen is a promising path to sensitive tests of CPT symmetry. The most direct route to achieve this goal is to create and probe antihydrogen in a magnetic minimum trap. Antihydrogen has been synthesized and trapped for 1000s at CERN by the ALPHA Collaboration. Some of the challenges associated with achieving these milestones will be discussed, including mixing cryogenic positron and antiproton plasmas to synthesize antihydrogen with kinetic energy less than the trap potential of .5K. Recent experiments in which hyperfine transitions were resonantly induced with microwaves will be presented. The opportunity for gravitational measurements in traps based on detailed studies of antihydrogen dynamics will be described. The talk will conclude with a discussion future antihydrogen research that will use a new experimental apparatus, ALPHA-I.

  14. EBIT trapping program

    International Nuclear Information System (INIS)

    Elliott, S.R.; Beck, B.; Beiersdorfer, P.; Church, D.; DeWitt, D.; Knapp, D.K.; Marrs, R.E.; Schneider, D.; Schweikhard, L.

    1993-01-01

    The LLNL electron beam ion trap provides the world's only source of stationary highly charged ions up to bare U. This unique capability makes many new atomic and nuclear physics experiments possible. (orig.)

  15. Microfabricated Waveguide Atom Traps.

    Energy Technology Data Exchange (ETDEWEB)

    Jau, Yuan-Yu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading cold atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.

  16. Optical trapping for analytical biotechnology.

    Science.gov (United States)

    Ashok, Praveen C; Dholakia, Kishan

    2012-02-01

    We describe the exciting advances of using optical trapping in the field of analytical biotechnology. This technique has opened up opportunities to manipulate biological particles at the single cell or even at subcellular levels which has allowed an insight into the physical and chemical mechanisms of many biological processes. The ability of this technique to manipulate microparticles and measure pico-Newton forces has found several applications such as understanding the dynamics of biological macromolecules, cell-cell interactions and the micro-rheology of both cells and fluids. Furthermore we may probe and analyse the biological world when combining trapping with analytical techniques such as Raman spectroscopy and imaging. Copyright © 2011 Elsevier Ltd. All rights reserved.

  17. Search For Trapped Antihydrogen

    CERN Document Server

    Andresen, Gorm B.; Baquero-Ruiz, Marcelo; Bertsche, William; Bowe, Paul D.; Bray, Crystal C.; Butler, Eoin; Cesar, Claudio L.; Chapman, Steven; Charlton, Michael; Fajans, Joel; Friesen, Tim; Fujiwara, Makoto C.; Gill, David R.; Hangst, Jeffrey S.; Hardy, Walter N.; Hayano, Ryugo S.; Hayden, Michael E.; Humphries, Andrew J.; Hydomako, Richard; Jonsell, Svante; Jorgensen, Lars V.; Kurchaninov, Lenoid; Lambo, Ricardo; Madsen, Niels; Menary, Scott; Nolan, Paul; Olchanski, Konstantin; Olin, Art; Povilus, Alexander; Pusa, Petteri; Robicheaux, Francis; Sarid, Eli; Nasr, Sarah Seif El; Silveira, Daniel M.; So, Chukman; Storey, James W.; Thompson, Robert I.; van der Werf, Dirk P.; Wilding, Dean; Wurtele, Jonathan S.; Yamazaki, Yasunori

    2011-01-01

    We present the results of an experiment to search for trapped antihydrogen atoms with the ALPHA antihydrogen trap at the CERN Antiproton Decelerator. Sensitive diagnostics of the temperatures, sizes, and densities of the trapped antiproton and positron plasmas have been developed, which in turn permitted development of techniques to precisely and reproducibly control the initial experimental parameters. The use of a position-sensitive annihilation vertex detector, together with the capability of controllably quenching the superconducting magnetic minimum trap, enabled us to carry out a high-sensitivity and low-background search for trapped synthesised antihydrogen atoms. We aim to identify the annihilations of antihydrogen atoms held for at least 130 ms in the trap before being released over ~30 ms. After a three-week experimental run in 2009 involving mixing of 10^7 antiprotons with 1.3 10^9 positrons to produce 6 10^5 antihydrogen atoms, we have identified six antiproton annihilation events that are consist...

  18. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    International Nuclear Information System (INIS)

    Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

    2015-01-01

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

  19. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-06-15

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

  20. Deep Vein Thrombosis

    African Journals Online (AJOL)

    OWNER

    Deep Vein Thrombosis: Risk Factors and Prevention in Surgical Patients. Deep Vein ... preventable morbidity and mortality in hospitalized surgical patients. ... the elderly.3,4 It is very rare before the age ... depends on the risk level; therefore an .... but also in the post-operative period. ... is continuing uncertainty regarding.

  1. Novel extension of the trap model for electrons in liquid hydrocarbons

    International Nuclear Information System (INIS)

    Jamal, M.A.; Watt, D.E.

    1981-01-01

    A novel extension for the trap model of electron mobilities in liquid hydrocarbons is described. The new model assumes: (a) two main types of electron trap exist in liquid hydrocarbons, one is deep and the second is shallow; (b) these traps are the same in all liquid alkanes. The difference in electron mobilities in different alkanes is accounted for by the difference in the frequency of electron trapping in each state. The probability of trapping in each state has been evaluated from the known structures of the normal alkanes. Electron mobilities in normal alkanes (C 3 -C 10 ) show a very good correlation with the probability of trapping in deep traps, suggesting that the C-C bonds are the main energy sinks of the electron. A mathematical formula which expresses the electron mobility in terms of the probability of trapping in deep traps has been found from the Arrhenius relationship between electron mobilities and probability of trapping. The model has been extended for branched alkanes and the relatively high electron mobilities in globular alkanes has been explained by the fact that each branch provides some degree of screening to the skeleton structure of the molecule resulting in reduction of the probability of electron interaction with the molecular skeleton. (author)

  2. Laser trapping of 21Na atoms

    International Nuclear Information System (INIS)

    Lu, Zheng-Tian.

    1994-09-01

    This thesis describes an experiment in which about four thousand radioactive 21 Na (t l/2 = 22 sec) atoms were trapped in a magneto-optical trap with laser beams. Trapped 21 Na atoms can be used as a beta source in a precision measurement of the beta-asymmetry parameter of the decay of 21 Na → 21 Ne + Β + + v e , which is a promising way to search for an anomalous right-handed current coupling in charged weak interactions. Although the number o trapped atoms that we have achieved is still about two orders of magnitude lower than what is needed to conduct a measurement of the beta-asymmetry parameter at 1% of precision level, the result of this experiment proved the feasibility of trapping short-lived radioactive atoms. In this experiment, 21 Na atoms were produced by bombarding 24 Mg with protons of 25 MeV at the 88 in. Cyclotron of Lawrence Berkeley Laboratory. A few recently developed techniques of laser manipulation of neutral atoms were applied in this experiment. The 21 Na atoms emerging from a heated oven were first transversely cooled. As a result, the on-axis atomic beam intensity was increased by a factor of 16. The atoms in the beam were then slowed down from thermal speed by applying Zeeman-tuned slowing technique, and subsequently loaded into a magneto-optical trap at the end of the slowing path. The last two chapters of this thesis present two studies on the magneto-optical trap of sodium atoms. In particular, the mechanisms of magneto-optical traps at various laser frequencies and the collisional loss mechanisms of these traps were examined

  3. Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

    International Nuclear Information System (INIS)

    Carlos, W.E.; Glaser, E.R.; Shanabrook, B.V.

    2003-01-01

    We have studied semi-insulating (SI) 4H SiC grown by physical vapor transport (PVT) and by high-temperature chemical vapor deposition (HTCVD) using electron paramagnetic resonance (EPR) and infrared photoluminescence (IR-PL) to better understand the defect(s) responsible for the SI behavior. Although intrinsic defects such as the isolated carbon vacancy and in some cases the isolated Si vacancies have previously been observed by EPR in undoped SI SiC, their concentrations are an order of magnitude too low to be responsible for the SI behavior. We are able to observe the EPR signature of the carbon vacancy-carbon antisite pair (V C -C Si ) pair defect in an excited state of its 2+ charge state in all PVT samples and some HTCVD samples. We also establish the IR-PL signature of this EPR center as the UD2 spectrum - a set of four sharp lines between 1.1 and 1.15 eV previously observed by Magnusson et al. in neutron-irradiated 4H-SiC. We also observe the UD1 line, a pair of sharp IR-PL lines at ∼1.06 eV and UD3, a single sharp line at ∼1.36 eV. We propose a simple model for the SI behavior in material in which the (V C -C Si ) pair defect is the dominant deep defect

  4. A preliminary study on the suitability of host rocks for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Park, Byung Yun; Koh, Young Kown

    2000-02-01

    It is expected that the key issues are listed as the disposal concept, reference disposal system and other relevant technical development for the deep geological disposal of HLW in each country. First above all, however, the preferred host rocks should be suggested prior execution of these activities. And, it is desirable to be reviewed and proposed some host rocks representative its country. For the reviewing of host rocks in Korean peninsula, several issues were considered such as the long-term geological stability, fracture system, surface and groundwater system and geochemical characteristics in peninsula. The three rock types such as plutonic rocks, crystalline gneisses and massive volcanic rocks were suggested as the preferred host rocks for the R and D of HLW disposal based on the upper stated information. In the following stages, it is suggested that these preferred host rocks would be made an object of all relevant R and D activities for HLW disposal. And, many references for these geologic medium should be characterized and constructed various technical development for the Korean reference disposal system.

  5. A preliminary study on the suitability of host rocks for deep geological disposal of high level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Park, Byung Yun; Koh, Young Kown

    2000-02-01

    It is expected that the key issues are listed as the disposal concept, reference disposal system and other relevant technical development for the deep geological disposal of HLW in each country. First above all, however, the preferred host rocks should be suggested prior execution of these activities. And, it is desirable to be reviewed and proposed some host rocks representative its country. For the reviewing of host rocks in Korean peninsula, several issues were considered such as the long-term geological stability, fracture system, surface and groundwater system and geochemical characteristics in peninsula. The three rock types such as plutonic rocks, crystalline gneisses and massive volcanic rocks were suggested as the preferred host rocks for the R and D of HLW disposal based on the upper stated information. In the following stages, it is suggested that these preferred host rocks would be made an object of all relevant R and D activities for HLW disposal. And, many references for these geologic medium should be characterized and constructed various technical development for the Korean reference disposal system

  6. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    International Nuclear Information System (INIS)

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-01-01

    Time-dependent responses of drain current (I d ) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I d by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10 12 cm −2 . When UV light is turned off at 300 K, a part of increased I d decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I d at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light

  7. Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhibo; Singh, Akshay; Chesin, Jordan; Armitage, Rob; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Kisslinger, Kim; Stach, Eric; Gradecak, Silvija

    2017-07-25

    Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

  8. Vapour trap development and operational experience

    International Nuclear Information System (INIS)

    Jansing, W.; Kirchner, G.; Menck, J.

    1977-01-01

    Sodium aerosols have the unpleasant characteristic that they deposit at places with low temperature level. This effect can be utilized when sodium aerosols are to be trapped at places which are determined beforehand. Thus vapour traps were developed which can filter sodium vapour from the cover gas. By this means the necessity was eliminated to heat all gas lines and gas systems with trace heaters just as all sodium lines are heated. It was of special interest for the INTERATOM to develop vapour traps which must not be changed or cleaned after a certain limited operating period. The vapour traps were supposed to enable maintenance free operation, i.e. they were to operate 'self cleaning'

  9. A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

    Science.gov (United States)

    Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

    2017-03-01

    Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

  10. Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

    International Nuclear Information System (INIS)

    Charles Doret, S; Amini, Jason M; Wright, Kenneth; Volin, Curtis; Killian, Tyler; Ozakin, Arkadas; Denison, Douglas; Hayden, Harley; Pai, C-S; Slusher, Richart E; Harter, Alexa W

    2012-01-01

    Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed characterization of a new linear trap, microfabricated with scalable complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited to this challenge. Forty-four individually controlled dc electrodes provide the many degrees of freedom required to construct anharmonic potential wells, shuttle ions, merge and split ion chains, precisely tune secular mode frequencies, and adjust the orientation of trap axes. Microfabricated capacitors on dc electrodes suppress radio-frequency pickup and excess micromotion, while a top-level ground layer simplifies modeling of electric fields and protects trap structures underneath. A localized aperture in the substrate provides access to the trapping region from an oven below, permitting deterministic loading of particular isotopic/elemental sequences via species-selective photoionization. The shapes of the aperture and radio-frequency electrodes are optimized to minimize perturbation of the trapping pseudopotential. Laboratory experiments verify simulated potentials and characterize trapping lifetimes, stray electric fields, and ion heating rates, while measurement and cancellation of spatially-varying stray electric fields permits the formation of nearly-equally spaced ion chains. (paper)

  11. Screening the Hanford tanks for trapped gas

    International Nuclear Information System (INIS)

    Whitney, P.

    1995-10-01

    The Hanford Site is home to 177 large, underground nuclear waste storage tanks. Hydrogen gas is generated within the waste in these tanks. This document presents the results of a screening of Hanford's nuclear waste storage tanks for the presence of gas trapped in the waste. The method used for the screening is to look for an inverse correlation between waste level measurements and ambient atmospheric pressure. If the waste level in a tank decreases with an increase in ambient atmospheric pressure, then the compressibility may be attributed to gas trapped within the waste. In this report, this methodology is not used to estimate the volume of gas trapped in the waste. The waste level measurements used in this study were made primarily to monitor the tanks for leaks and intrusions. Four measurement devices are widely used in these tanks. Three of these measure the level of the waste surface. The remaining device measures from within a well embedded in the waste, thereby monitoring the liquid level even if the liquid level is below a dry waste crust. In the past, a steady rise in waste level has been taken as an indicator of trapped gas. This indicator is not part of the screening calculation described in this report; however, a possible explanation for the rise is given by the mathematical relation between atmospheric pressure and waste level used to support the screening calculation. The screening was applied to data from each measurement device in each tank. If any of these data for a single tank indicated trapped gas, that tank was flagged by this screening process. A total of 58 of the 177 Hanford tanks were flagged as containing trapped gas, including 21 of the 25 tanks currently on the flammable gas watch list

  12. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

    Science.gov (United States)

    Hema Lata Rao, M.; Narasimha Murty, N. V. L.

    2015-01-01

    An improved analytical model for the current—voltage (I-V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I-V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I-V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates.

  13. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

    International Nuclear Information System (INIS)

    Rao, M. Hema Lata; Murty, N. V. L. Narasimha

    2015-01-01

    An improved analytical model for the current—voltage (I–V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I–V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I–V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates. (semiconductor devices)

  14. The use (and misuse) of sediment traps in coral reef environments: Theory, observations, and suggested protocols

    Science.gov (United States)

    Storlazzi, C.D.; Field, M.E.; Bothner, Michael H.

    2011-01-01

    Sediment traps are commonly used as standard tools for monitoring “sedimentation” in coral reef environments. In much of the literature where sediment traps were used to measure the effects of “sedimentation” on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about “sedimentation” on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height (H), trap mouth diameter (D), the height of the trap mouth above the substrate (z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

  15. Physics with Trapped Antihydrogen

    Science.gov (United States)

    Charlton, Michael

    2017-04-01

    For more than a decade antihydrogen atoms have been formed by mixing antiprotons and positrons held in arrangements of charged particle (Penning) traps. More recently, magnetic minimum neutral atom traps have been superimposed upon the anti-atom production region, promoting the trapping of a small quantity of the antihydrogen yield. We will review these advances, and describe some of the first physics experiments performed on anrtihydrogen including the observation of the two-photon 1S-2S transition, invesigation of the charge neutrailty of the anti-atom and studies of the ground state hyperfine splitting. We will discuss the physics motivations for undertaking these experiments and describe some near-future initiatives.

  16. Estimating Ground-Level PM2.5 by Fusing Satellite and Station Observations: A Geo-Intelligent Deep Learning Approach

    Science.gov (United States)

    Li, Tongwen; Shen, Huanfeng; Yuan, Qiangqiang; Zhang, Xuechen; Zhang, Liangpei

    2017-12-01

    Fusing satellite observations and station measurements to estimate ground-level PM2.5 is promising for monitoring PM2.5 pollution. A geo-intelligent approach, which incorporates geographical correlation into an intelligent deep learning architecture, is developed to estimate PM2.5. Specifically, it considers geographical distance and spatiotemporally correlated PM2.5 in a deep belief network (denoted as Geoi-DBN). Geoi-DBN can capture the essential features associated with PM2.5 from latent factors. It was trained and tested with data from China in 2015. The results show that Geoi-DBN performs significantly better than the traditional neural network. The out-of-sample cross-validation R2 increases from 0.42 to 0.88, and RMSE decreases from 29.96 to 13.03 μg/m3. On the basis of the derived PM2.5 distribution, it is predicted that over 80% of the Chinese population live in areas with an annual mean PM2.5 of greater than 35 μg/m3. This study provides a new perspective for air pollution monitoring in large geographic regions.

  17. Ion trap device

    Science.gov (United States)

    Ibrahim, Yehia M.; Smith, Richard D.

    2016-01-26

    An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

  18. Asymmetric ion trap

    Science.gov (United States)

    Barlow, Stephan E.; Alexander, Michael L.; Follansbee, James C.

    1997-01-01

    An ion trap having two end cap electrodes disposed asymmetrically about a center of a ring electrode. The inner surface of the end cap electrodes are conformed to an asymmetric pair of equipotential lines of the harmonic formed by the application of voltages to the electrodes. The asymmetry of the end cap electrodes allows ejection of charged species through the closer of the two electrodes which in turn allows for simultaneously detecting anions and cations expelled from the ion trap through the use of two detectors charged with opposite polarity.

  19. Arthropod phylogenetics in light of three novel millipede (myriapoda: diplopoda) mitochondrial genomes with comments on the appropriateness of mitochondrial genome sequence data for inferring deep level relationships.

    Science.gov (United States)

    Brewer, Michael S; Swafford, Lynn; Spruill, Chad L; Bond, Jason E

    2013-01-01

    Arthropods are the most diverse group of eukaryotic organisms, but their phylogenetic relationships are poorly understood. Herein, we describe three mitochondrial genomes representing orders of millipedes for which complete genomes had not been characterized. Newly sequenced genomes are combined with existing data to characterize the protein coding regions of myriapods and to attempt to reconstruct the evolutionary relationships within the Myriapoda and Arthropoda. The newly sequenced genomes are similar to previously characterized millipede sequences in terms of synteny and length. Unique translocations occurred within the newly sequenced taxa, including one half of the Appalachioria falcifera genome, which is inverted with respect to other millipede genomes. Across myriapods, amino acid conservation levels are highly dependent on the gene region. Additionally, individual loci varied in the level of amino acid conservation. Overall, most gene regions showed low levels of conservation at many sites. Attempts to reconstruct the evolutionary relationships suffered from questionable relationships and low support values. Analyses of phylogenetic informativeness show the lack of signal deep in the trees (i.e., genes evolve too quickly). As a result, the myriapod tree resembles previously published results but lacks convincing support, and, within the arthropod tree, well established groups were recovered as polyphyletic. The novel genome sequences described herein provide useful genomic information concerning millipede groups that had not been investigated. Taken together with existing sequences, the variety of compositions and evolution of myriapod mitochondrial genomes are shown to be more complex than previously thought. Unfortunately, the use of mitochondrial protein-coding regions in deep arthropod phylogenetics appears problematic, a result consistent with previously published studies. Lack of phylogenetic signal renders the resulting tree topologies as suspect

  20. Arthropod phylogenetics in light of three novel millipede (myriapoda: diplopoda mitochondrial genomes with comments on the appropriateness of mitochondrial genome sequence data for inferring deep level relationships.

    Directory of Open Access Journals (Sweden)

    Michael S Brewer

    Full Text Available BACKGROUND: Arthropods are the most diverse group of eukaryotic organisms, but their phylogenetic relationships are poorly understood. Herein, we describe three mitochondrial genomes representing orders of millipedes for which complete genomes had not been characterized. Newly sequenced genomes are combined with existing data to characterize the protein coding regions of myriapods and to attempt to reconstruct the evolutionary relationships within the Myriapoda and Arthropoda. RESULTS: The newly sequenced genomes are similar to previously characterized millipede sequences in terms of synteny and length. Unique translocations occurred within the newly sequenced taxa, including one half of the Appalachioria falcifera genome, which is inverted with respect to other millipede genomes. Across myriapods, amino acid conservation levels are highly dependent on the gene region. Additionally, individual loci varied in the level of amino acid conservation. Overall, most gene regions showed low levels of conservation at many sites. Attempts to reconstruct the evolutionary relationships suffered from questionable relationships and low support values. Analyses of phylogenetic informativeness show the lack of signal deep in the trees (i.e., genes evolve too quickly. As a result, the myriapod tree resembles previously published results but lacks convincing support, and, within the arthropod tree, well established groups were recovered as polyphyletic. CONCLUSIONS: The novel genome sequences described herein provide useful genomic information concerning millipede groups that had not been investigated. Taken together with existing sequences, the variety of compositions and evolution of myriapod mitochondrial genomes are shown to be more complex than previously thought. Unfortunately, the use of mitochondrial protein-coding regions in deep arthropod phylogenetics appears problematic, a result consistent with previously published studies. Lack of phylogenetic

  1. Comparison of trap types and colors for capturing emerald ash borer adults at different population densities.

    Science.gov (United States)

    Poland, Therese M; Mccullough, Deborah G

    2014-02-01

    Results of numerous trials to evaluate artificial trap designs and lures for detection of Agrilus planipennis Fairmaire, the emerald ash borer, have yielded inconsistent results, possibly because of different A. planipennis population densities in the field sites. In 2010 and 2011, we compared 1) green canopy traps, 2) purple canopy traps, 3) green double-decker traps, and 4) purple double-decker traps in sites representing a range of A. planipennis infestation levels. Traps were baited with cis-3-hexenol in both years, plus an 80:20 mixture of Manuka and Phoebe oil (2010) or Manuka oil alone (2011). Condition of trees bearing canopy traps, A. planipennis infestation level of trees in the vicinity of traps, and number of A. planipennis captured per trap differed among sites in both years. Overall in both years, more females, males, and beetles of both sexes were captured on double-decker traps than canopy traps, and more beetles of both sexes (2010) or females (2011) were captured on purple traps than green traps. In 2010, detection rates were higher for purple (100%) and green double-decker traps (100%) than for purple (82%) or green canopy traps (64%) at sites with very low to low A. planipennis infestation levels. Captures of A. planipennis on canopy traps consistently increased with the infestation level of the canopy trap-bearing trees. Differences among trap types were most pronounced at sites with low A. planipennis densities, where more beetles were captured on purple double-decker traps than on green canopy traps in both years.

  2. WATER-TRAPPED WORLDS

    International Nuclear Information System (INIS)

    Menou, Kristen

    2013-01-01

    Although tidally locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO 2 as dayside ocean basins dry up. Water-trapped worlds with dry daysides may offer similar advantages as land planets for habitability, by contrast with worlds where more abundant water freely flows around the globe

  3. Redesigning octopus traps

    Directory of Open Access Journals (Sweden)

    Eduarda Gomes

    2014-06-01

    In order to minimise the identified problems in the actual traps, the present work proposes a new design with the aim of reducing the volume and weight during transport, and also during onshore storage. Alternative materials to avoid corrosion and formation of encrustations were also proposed.

  4. WATER-TRAPPED WORLDS

    Energy Technology Data Exchange (ETDEWEB)

    Menou, Kristen [Department of Astronomy, Columbia University, 550 West 120th Street, New York, NY 10027 (United States)

    2013-09-01

    Although tidally locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO{sub 2} as dayside ocean basins dry up. Water-trapped worlds with dry daysides may offer similar advantages as land planets for habitability, by contrast with worlds where more abundant water freely flows around the globe.

  5. Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

    International Nuclear Information System (INIS)

    Ganichev, S. D.; Ziemann, E.; Prettl, W.; Yassievich, I. N.; Istratov, A. A.; Weber, E. R.

    2000-01-01

    The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in Al x Ga 1-x As:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect. (c) 2000 The American Physical Society

  6. The inventory model for feasibility studies of a deep geological disposal for high level and long lived waste

    International Nuclear Information System (INIS)

    Dutzer, M.; Lagrange, M.H.; Porcher, J.B.; Chupeau, J.

    2001-01-01

    A detailed inventory of high level and long lived waste packages was established to perform studies for the feasibility of an underground repository. This inventory takes into account existing conditioned waste, unconditioned waste and arisings generated by existing facilities. Grouping of waste package sorts in package types is done regarding relevant characteristics that determine the design of disposal vaults. The radiological content of each package type is derived from calculations of nuclear interactions inside the reactors, from the distribution of the nuclides in the different package types; it is cross-checked with available data on waste sorts. (author)

  7. [Homocysteine levels and polymorphisms of MTHFR and CBS genes in Colombian patients with superficial and deep venous thrombosis].

    Science.gov (United States)

    Ayala, Claudia; García, Reggie; Cruz, Edith; Prieto, Karol; Bermúdez, Marta

    2010-01-01

    Thrombosis develops when the hemostatic system is incorrectly activated due to the unbalance between procoagulant, anticoagulant and fibrinolytic mechanisms allowing the formation of a clot within a blood vessel. The risk factors of this pathology can be acquired or can be genetic. To analyze in a Colombian population with diagnosis of venous thrombosis, lipid profile, glucose and homocystein levels, to calculate the alleles and genotypic frequencies of polymorphisms c.699 C>T, c.1080 C>T, c.844ins68 of the cystathionine ß synthase and the c.677 C>T of the methylenetetrahydrofolate reductase (MTHFR) genes. Thirty three patients and their controls were studied. The biochemical test was carried out by colorimetric methods and immunoassay. In this survey we used the restriction fragments longitude polymorphism (RLFP) technique to identify the polymorphisms mentioned. The association study was performed through the chi square test. We confirmed that gene alterations increase risk for pathology; we found statistically significant differences in the group with hypercholesterolemia in presence of the polymorphism c.699 C>T in the CBS gene, showing a protective effect in the individuals carrying this genetic variation. Likewise, we found a statistical trend for an eventual protective effect of the CBS c.844ins68 polymorphism to venous thrombotic disease. There were not any statistically significant differences in homocystein levels between cases and controls; nevertheless, the variability in the plasma concentrations was greater in the group of cases.

  8. Transport of a solute pulse through the bentonite barrier of deep geological high-level waste storage facilities in granite

    International Nuclear Information System (INIS)

    Cormenzana Lopez, J.L.; Alonso Diaz-Teran, J.; Gonzalez- Herranz, E.

    1997-01-01

    Spain like Sweden, Finland, Canada and other countries has opted for an open nuclear fuel cycle, and to store the unreprocessed spent fuel in a stable geological formation. Sweden, Finland and Canada have chosen granite rock for their high-level waste storage facilities. Their Performance Assessment of disposal systems have all obtained to the same result. The greatest annual doses are caused by I 129 in the gap between the fuel rods and the cladding. The reference concept for the Spanish high-level waste storage facility in granite provides for final storage in a granite mass at a depth of 500 m in carbon steel capsules in horizontal tunnels surrounded by a bentonite buffer. It the capsule fails due to generalised corrosion, an not giving credit for the cladding, the I 129 and other radionuclides in the gap would pass immediately into the surrounding water. This paper describes the modelling of the transport of the solute through the bentonite around the capsule to determine the fraction that crosses the bentonite each year. It also analyses the sensitivity of the results to the boundary condition adopted and changes in the values of the relevant parameters. (Author)

  9. The Prediction of the Risk Level of Pulmonary Embolism and Deep Vein Thrombosis through Artificial Neural Network.

    Science.gov (United States)

    Agharezaei, Laleh; Agharezaei, Zhila; Nemati, Ali; Bahaadinbeigy, Kambiz; Keynia, Farshid; Baneshi, Mohammad Reza; Iranpour, Abedin; Agharezaei, Moslem

    2016-10-01

    Venous thromboembolism is a common cause of mortality among hospitalized patients and yet it is preventable through detecting the precipitating factors and a prompt diagnosis by specialists. The present study has been carried out in order to assist specialists in the diagnosis and prediction of the risk level of pulmonary embolism in patients, by means of artificial neural network. A number of 31 risk factors have been used in this study in order to evaluate the conditions of 294 patients hospitalized in 3 educational hospitals affiliated with Kerman University of Medical Sciences. Two types of artificial neural networks, namely Feed-Forward Back Propagation and Elman Back Propagation, were compared in this study. Through an optimized artificial neural network model, an accuracy and risk level index of 93.23 percent was achieved and, subsequently, the results have been compared with those obtained from the perfusion scan of the patients. 86.61 percent of high risk patients diagnosed through perfusion scan diagnostic method were also diagnosed correctly through the method proposed in the present study. The results of this study can be a good resource for physicians, medical assistants, and healthcare staff to diagnose high risk patients more precisely and prevent the mortalities. Additionally, expenses and other unnecessary diagnostic methods such as perfusion scans can be efficiently reduced.

  10. Marine water from mid-Holocene sea level highstand trapped in a coastal aquifer: Evidence from groundwater isotopes, and environmental significance

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Stephen [School of Civil, Environmental and Chemical Engineering, RMIT University, Melbourne (Australia); Currell, Matthew, E-mail: Matthew.currell@rmit.edu.au [School of Civil, Environmental and Chemical Engineering, RMIT University, Melbourne (Australia); Cendón, Dioni I. [Australian Nuclear Science and Technology Organisation, Kirrawee (Australia); Connected Water Initiative, School of Biological, Earth and Environmental Sciences, University of New South Wales (UNSW), Sydney (Australia)

    2016-02-15

    A multi-layered coastal aquifer in southeast Australia was assessed using environmental isotopes, to identify the origins of salinity and its links to palaeo-environmental setting. Spatial distribution of groundwater salinity (electrical conductivity values ranging from 0.395 to 56.1 mS/cm) was examined along the coastline along with geological, isotopic and chemical data. This allowed assessment of different salinity sources and emplacement mechanisms. Molar chloride/bromide ratios range from 619 to 1070 (621 to 705 in samples with EC > 15 mS/cm), indicating salts are predominantly marine. Two distinct vertical salinity profiles were observed, one with increasing salinity with depth and another with saline shallow water overlying fresh groundwater. The saline shallow groundwater (EC = 45.4 to 55.7 mS/cm) has somewhat marine-like stable isotope ratios (δ{sup 18}O = − 2.4 to − 1.9 ‰) and radiocarbon activities indicative of middle Holocene emplacement (47.4 to 60.4 pMC). This overlies fresher groundwater with late Pleistocene radiocarbon ages and meteoric stable isotopes (δ{sup 18}O = − 5.5 to − 4.6‰). The configuration suggests surface inundation of the upper sediments by marine water during the mid-Holocene (c. 2–8 kyr BP), when sea level was 1–2 m above today's level. Profiles of chloride, stable isotopes, and radiocarbon indicate mixing between this pre-modern marine water and fresh meteoric groundwater to varying degrees around the coastline. Mixing calculations using chloride and stable isotopes show that in addition to fresh-marine water mixing, some salinity is derived from transpiration by halophytic vegetation (e.g. mangroves). The δ{sup 13}C ratios in saline water (− 17.6 to − 18.4‰) also have vegetation/organic matter signatures, consistent with emplacement by surface inundation and extensive interaction between vegetation and recharging groundwater. Saline shallow groundwater is preserved only in areas where low

  11. Revised shallow and deep water-level and storage-volume changes in the Equus Beds Aquifer near Wichita, Kansas, predevelopment to 1993

    Science.gov (United States)

    Hansen, Cristi V.; Lanning-Rush, Jennifer L.; Ziegler, Andrew C.

    2013-01-01

    credits from the Equus Beds aquifer by the city of Wichita. The 1993 water levels correspond to the lowest recorded levels and largest storage declines since 1940. Revised and new water-level maps of shallow and deep layers were developed to better represent the general condition of the aquifer. Only static water levels were used to better represent the general condition of the aquifer and comply with Wichita’s ASR permits. To ensure adequate data density, the January 1993 period was expanded to October 1992 through February 1993. Static 1993 water levels from the deep aquifer layer of the Equus Beds aquifer possibly could be used as the lower baseline for regulatory purposes. Previously, maps of water-level changes used to estimate the storage-volume changes included a combination of static (unaffected by pumping or nearby pumping) and stressed (affected by pumping or nearby pumping) water levels from wells. Some of these wells were open to the shallow aquifer layer and some were open to the deep aquifer layer of the Equus Beds aquifer. In this report, only static water levels in the shallow aquifer layer were used to determine storage-volume changes. The effects on average water-level and storage-volume change from the use of mixed, stressed water levels and a specific yield of 0.20 were compared to the use of static water levels in the shallow aquifer and a specific yield of 0.15. This comparison indicates that the change in specific yield causes storage-volume changes to decrease about 25 percent, whereas the use of static water levels in the shallow aquifer layer causes an increase of less than 4 percent. Use of a specific yield of 0.15 will result in substantial decreases in the amount of storage-volume change compared to those reported previously that were calculated using a specific yield of 0.20. Based on these revised water-level maps and computations, the overall decline and change in storage from predevelopment to 1993 represented a loss in storage of about

  12. [Trapping techniques for Solenopsis invicta].

    Science.gov (United States)

    Liang, Xiao-song; Zhang, Qiang; Zhuang, Yiong-lin; Li, Gui-wen; Ji, Lin-peng; Wang, Jian-guo; Dai, Hua-guo

    2007-06-01

    A field study was made to investigate the trapping effects of different attractants, traps, and wind directions on Solenopsis invicta. The results showed that among the test attractants, TB1 (50 g fishmeal, 40 g peptone, 10 ml 10% sucrose water solution and 20 ml soybean oil) had the best effect, followed by TB2 (ham), TB6 (100 g cornmeal and 20 ml soybean oil) and TB4 (10 ml 10% sucrose water solution, 100 g sugarcane powder and 20 ml soybean oil), with a mean capture efficiency being 77.6, 58.7, 29 and 7.7 individuals per trap, respectively. No S. invicta was trapped with TB3 (10 ml 10% sucrose water solution, 100 g cornmeal and 20 ml soybean oil) and TB5 (honey). Tube trap was superior to dish trap, with a trapping efficiency of 75.2 and 35 individuals per trap, respectively. The attractants had better effects in leeward than in windward.

  13. Optical trapping of gold aerosols

    DEFF Research Database (Denmark)

    Schmitt, Regina K.; Pedersen, Liselotte Jauffred; Taheri, S. M.

    2015-01-01

    Aerosol trapping has proven challenging and was only recently demonstrated.1 This was accomplished by utilizing an air chamber designed to have a minimum of turbulence and a laser beam with a minimum of aberration. Individual gold nano-particles with diameters between 80 nm and 200 nm were trapped...... in air using a 1064 nm laser. The positions visited by the trapped gold nano-particle were quantified using a quadrant photo diode placed in the back focal plane. The time traces were analyzed and the trapping stiffness characterizing gold aerosol trapping determined and compared to aerosol trapping...... of nanometer sized silica and polystyrene particles. Based on our analysis, we concluded that gold nano-particles trap more strongly in air than similarly sized polystyrene and silica particles. We found that, in a certain power range, the trapping strength of polystyrene particles is linearly decreasing...

  14. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    International Nuclear Information System (INIS)

    Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

    2013-01-01

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

  15. Deep frying

    NARCIS (Netherlands)

    Koerten, van K.N.

    2016-01-01

    Deep frying is one of the most used methods in the food processing industry. Though practically any food can be fried, French fries are probably the most well-known deep fried products. The popularity of French fries stems from their unique taste and texture, a crispy outside with a mealy soft

  16. Climate change and ocean acidification impacts on lower trophic levels and the export of organic carbon to the deep ocean

    Directory of Open Access Journals (Sweden)

    A. Yool

    2013-09-01

    Full Text Available Most future projections forecast significant and ongoing climate change during the 21st century, but with the severity of impacts dependent on efforts to restrain or reorganise human activity to limit carbon dioxide (CO2 emissions. A major sink for atmospheric CO2, and a key source of biological resources, the World Ocean is widely anticipated to undergo profound physical and – via ocean acidification – chemical changes as direct and indirect results of these emissions. Given strong biophysical coupling, the marine biota is also expected to experience strong changes in response to this anthropogenic forcing. Here we examine the large-scale response of ocean biogeochemistry to climate and acidification impacts during the 21st century for Representative Concentration Pathways (RCPs 2.6 and 8.5 using an intermediate complexity global ecosystem model, MEDUSA-2.0. The primary impact of future change lies in stratification-led declines in the availability of key nutrients in surface waters, which in turn leads to a global decrease (1990s vs. 2090s in ocean productivity (−6.3%. This impact has knock-on consequences for the abundance of the low trophic level biogeochemical actors modelled by MEDUSA-2.0 (−5.8%, and these would be expected to similarly impact higher trophic level elements such as fisheries. Related impacts are found in the flux of organic material to seafloor communities (−40.7% at 1000 m, and in the volume of ocean suboxic zones (+12.5%. A sensitivity analysis removing an acidification feedback on calcification finds that change in this process significantly impacts benthic communities, suggesting that a~better understanding of the OA-sensitivity of calcifying organisms, and their role in ballasting sinking organic carbon, may significantly improve forecasting of these ecosystems. For all processes, there is geographical variability in change – for instance, productivity declines −21% in the Atlantic and increases +59% in

  17. Deep learning

    CERN Document Server

    Goodfellow, Ian; Courville, Aaron

    2016-01-01

    Deep learning is a form of machine learning that enables computers to learn from experience and understand the world in terms of a hierarchy of concepts. Because the computer gathers knowledge from experience, there is no need for a human computer operator to formally specify all the knowledge that the computer needs. The hierarchy of concepts allows the computer to learn complicated concepts by building them out of simpler ones; a graph of these hierarchies would be many layers deep. This book introduces a broad range of topics in deep learning. The text offers mathematical and conceptual background, covering relevant concepts in linear algebra, probability theory and information theory, numerical computation, and machine learning. It describes deep learning techniques used by practitioners in industry, including deep feedforward networks, regularization, optimization algorithms, convolutional networks, sequence modeling, and practical methodology; and it surveys such applications as natural language proces...

  18. On-chip particle trapping and manipulation

    Science.gov (United States)

    Leake, Kaelyn Danielle

    The ability to control and manipulate the world around us is human nature. Humans and our ancestors have used tools for millions of years. Only in recent years have we been able to control objects at such small levels. In order to understand the world around us it is frequently necessary to interact with the biological world. Optical trapping and manipulation offer a non-invasive way to move, sort and interact with particles and cells to see how they react to the world around them. Optical tweezers are ideal in their abilities but they require large, non-portable, and expensive setups limiting how and where we can use them. A cheap portable platform is required in order to have optical manipulation reach its full potential. On-chip technology offers a great solution to this challenge. We focused on the Liquid-Core Anti-Resonant Reflecting Optical Waveguide (liquid-core ARROW) for our work. The ARROW is an ideal platform, which has anti-resonant layers which allow light to be guided in liquids, allowing for particles to easily be manipulated. It is manufactured using standard silicon manufacturing techniques making it easy to produce. The planner design makes it easy to integrate with other technologies. Initially I worked to improve the ARROW chip by reducing the intersection losses and by reducing the fluorescence and background on the ARROW chip. The ARROW chip has already been used to trap and push particles along its channel but here I introduce several new methods of particle trapping and manipulation on the ARROW chip. Traditional two beam traps use two counter propagating beams. A trapping scheme that uses two orthogonal beams which counter to first instinct allow for trapping at their intersection is introduced. This scheme is thoroughly predicted and analyzed using realistic conditions. Simulations of this method were done using a program which looks at both the fluidics and optical sources to model complex situations. These simulations were also used to

  19. Application of Deep Learning and Supervised Learning Methods to Recognize Nonlinear Hidden Pattern in Water Stress Levels from Spatiotemporal Datasets across Rural and Urban US Counties

    Science.gov (United States)

    Eisenhart, T.; Josset, L.; Rising, J. A.; Devineni, N.; Lall, U.

    2017-12-01

    In the wake of recent water crises, the need to understand and predict the risk of water stress in urban and rural areas has grown. This understanding has the potential to improve decision making in public resource management, policy making, risk management and investment decisions. Assuming an underlying relationship between urban and rural water stress and observable features, we apply Deep Learning and Supervised Learning models to uncover hidden nonlinear patterns from spatiotemporal datasets. Results of interest includes prediction accuracy on extreme categories (i.e. urban areas highly prone to water stress) and not solely the average risk for urban or rural area, which adds complexity to the tuning of model parameters. We first label urban water stressed counties using annual water quality violations and compile a comprehensive spatiotemporal dataset that captures the yearly evolution of climatic, demographic and economic factors of more than 3,000 US counties over the 1980-2010 period. As county-level data reporting is not done on a yearly basis, we test multiple imputation methods to get around the issue of missing data. Using Python libraries, TensorFlow and scikit-learn, we apply and compare the ability of, amongst other methods, Recurrent Neural Networks (testing both LSTM and GRU cells), Convolutional Neural Networks and Support Vector Machines to predict urban water stress. We evaluate the performance of those models over multiple time spans and combine methods to diminish the risk of overfitting and increase prediction power on test sets. This methodology seeks to identify hidden nonlinear patterns to assess the predominant data features that influence urban and rural water stress. Results from this application at the national scale will assess the performance of deep learning models to predict water stress risk areas across all US counties and will highlight a predominant Machine Learning method for modeling water stress risk using spatiotemporal

  20. Deep Ocean Mineral Supplementation Enhances the Cerebral Hemodynamic Response during Exercise and Decreases Inflammation Postexercise in Men at Two Age Levels

    Directory of Open Access Journals (Sweden)

    Ching-Yin Wei

    2017-12-01

    Full Text Available Background: Previous studies have consistently shown that oral supplementation of deep ocean minerals (DOM improves vascular function in animals and enhances muscle power output in exercising humans.Purpose: To examine the effects of DOM supplementation on the cerebral hemodynamic response during physical exertion in young and middle-aged men.Design: Double-blind placebo-controlled crossover studies were conducted in young (N = 12, aged 21.2 ± 0.4 years and middle-aged men (N = 9, aged 46.8 ± 1.4 years. The counter-balanced trials of DOM and Placebo were separated by a 2-week washout period. DOM and Placebo were orally supplemented in drinks before, during, and after cycling exercise. DOM comprises desalinated minerals and trace elements from seawater collected ~618 m below the earth's surface.Methods: Cerebral hemodynamic response (tissue hemoglobin was measured during cycling at 75% VO2max using near infrared spectroscopy (NIRS.Results: Cycling time to exhaustion at 75% VO2max and the associated plasma lactate response were similar between the Placebo and DOM trials for both age groups. In contrast, DOM significantly elevated cerebral hemoglobin levels in young men and, to a greater extent, in middle-aged men compared with Placebo. An increased neutrophil to lymphocyte ratio (NLR was observed in middle-aged men, 2 h after exhaustive cycling, but was attenuated by DOM.Conclusion: Our data suggest that minerals and trace elements from deep oceans possess great promise in developing supplements to increase the cerebral hemodynamic response against a physical challenge and during post-exercise recovery for middle-aged men.

  1. Application of Ga-Al discrimination plots in identification of high strength granitic host rocks for deep geological repository of high level radioactive waste

    International Nuclear Information System (INIS)

    Bajpai, R.K.; Narayan, P.K.; Trivedi, R.K.; Purohit, M.K.

    2010-01-01

    The permanent disposal of vitrified high level wastes and in some cases even spent fuel, is being planned in specifically designed and built deep geological repository located in the depth range of 500-600m in appropriate host rock at carefully selected sites. Such facilities are expected to provide very long term isolation and confinement to the disposed waste by means of long term mechanical stability of such structures that results from very high strength and homogeneity of the chosen rock, geochemical compatible environment around the disposed waste and general lack of groundwater. In Indian geological repository development programme, granites have been selected as target host rock and large scale characterization studies have been undertaken to develop database of mineralogy, petrology, geochemistry and rock mechanical characteristics. The paper proposes a new approach for demarcation of high strength homogeneous granite rocks from within an area of about 100 square kilometres wherein a cocktail of granites of different origins with varying rock mass characteristics co exists. The study area is characterised by the presence of A, S and I type granites toughly intermixed. The S type granites are derived from sedimentary parent material and therefore carry relics of parent fabric and at times undigested material with resultant reduction in their strength and increased inhomogeneity. On the other hand I type varieties are derived from igneous parents and are more homogeneous with sufficient strength. The A type granites are emplaced as molten mass in a complete non-tectonic setting with resultant homogeneous compositions, absence of tectonic fabric and very high strength. Besides they are silica rich with less vulnerability to alterations with time. Thus A type granites are most suited for construction of Deep Geological Repository. For developing a geochemical approach for establishing relation between chemical compositions and rock strength parameters, a

  2. Deep sequencing of Brachypodium small RNAs at the global genome level identifies microRNAs involved in cold stress response

    Directory of Open Access Journals (Sweden)

    Chong Kang

    2009-09-01

    Full Text Available Abstract Background MicroRNAs (miRNAs are endogenous small RNAs having large-scale regulatory effects on plant development and stress responses. Extensive studies of miRNAs have only been performed in a few model plants. Although miRNAs are proved to be involved in plant cold stress responses, little is known for winter-habit monocots. Brachypodium distachyon, with close evolutionary relationship to cool-season cereals, has recently emerged as a novel model plant. There are few reports of Brachypodium miRNAs. Results High-throughput sequencing and whole-genome-wide data mining led to the identification of 27 conserved miRNAs, as well as 129 predicted miRNAs in Brachypodium. For multiple-member conserved miRNA families, their sizes in Brachypodium were much smaller than those in rice and Populus. The genome organization of miR395 family in Brachypodium was quite different from that in rice. The expression of 3 conserved miRNAs and 25 predicted miRNAs showed significant changes in response to cold stress. Among these miRNAs, some were cold-induced and some were cold-suppressed, but all the conserved miRNAs were up-regulated under cold stress condition. Conclusion Our results suggest that Brachypodium miRNAs are composed of a set of conserved miRNAs and a large proportion of non-conserved miRNAs with low expression levels. Both kinds of miRNAs were involved in cold stress response, but all the conserved miRNAs were up-regulated, implying an important role for cold-induced miRNAs. The different size and genome organization of miRNA families in Brachypodium and rice suggest that the frequency of duplication events or the selection pressure on duplicated miRNAs are different between these two closely related plant species.

  3. Suppression and enhancement of deep level emission of ZnO on Si4+ & V5+ substitution

    Science.gov (United States)

    Srivastava, T.; Bajpai, G.; Sen, S.

    2018-03-01

    ZnO possess a wide range of tunable properties depending on the type and concentration of dopant. Defects in ZnO due to doped aliovalent ions can generate certain functionalities. Such defects in the lattice do not deteriorate the material properties but actually modifies the material towards infinite number of possibilities. Defects like oxygen vacancies play a significant role in photocatalytic and sensing applications. Depending upon the functionality, defect state of ZnO can be modified by suitable doping. Amount and nature of different dopant has different effect on defect state of ZnO. It depends upon the ionic radii, valence state, chemical stability etc. of the ion doped. Two samples with two different dopants i.e., silicon and vanadium, Zn1-xSixO and Zn1-xVxO, for x=0 & 0.020, were synthesized using solgel method (a citric acid-glycerol route) followed by solid state sintering. A comparison of their optical properties, photoluminescence and UV-Vis spectroscopy, with pure ZnO was studied at room temperature. Silicon doping drastically reduces whereas vanadium doping enhances the green emission as compared with pure ZnO. Suppression and enhancement of defect levels (DLE) is rationalized by the effects of extra charge present on Si4+ & V5+ (in comparison to Zn2+) and formation of new hybrid state (V3d O2p) within bandgap. Reduction of defects in Zn1-xSixO makes it suitable material for opto-electronics application whereas enhancement in defects in Zn1-xVxO makes it suitable material for photocatalytic as well as gas sensing application.

  4. Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

    KAUST Repository

    Voznyy, O.

    2013-03-21

    Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers\\' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

  5. Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

    KAUST Repository

    Voznyy, O.; Thon, S. M.; Ip, A. H.; Sargent, E. H.

    2013-01-01

    Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

  6. Cooling and trapping neutral atoms with radiative forces

    International Nuclear Information System (INIS)

    Bagnato, V.S.; Castro, J.C.; Li, M.S.; Zilio, S.C.

    1988-01-01

    Techniques to slow and trap neutral atoms at high densities with radiative forces are discussed in this review articles. Among several methods of laser cooling, it is emphasized Zeeman Tuning of the electronic levels and frequency-sweeping techniques. Trapping of neutral atoms and recent results obtained in light and magnetic traps are discussed. Techniques to further cool atoms inside traps are presented and the future of laser cooling of neutral atoms by means of radiation pressure is discussed. (A.C.A.S.) [pt

  7. Deep Super Learner: A Deep Ensemble for Classification Problems

    OpenAIRE

    Young, Steven; Abdou, Tamer; Bener, Ayse

    2018-01-01

    Deep learning has become very popular for tasks such as predictive modeling and pattern recognition in handling big data. Deep learning is a powerful machine learning method that extracts lower level features and feeds them forward for the next layer to identify higher level features that improve performance. However, deep neural networks have drawbacks, which include many hyper-parameters and infinite architectures, opaqueness into results, and relatively slower convergence on smaller datase...

  8. Trapped Ion Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Maunz, Peter Lukas Wilhelm

    2017-04-01

    Qubits can be encoded in clock states of trapped ions. These states are well isolated from the environment resulting in long coherence times [1] while enabling efficient high-fidelity qubit interactions mediated by the Coulomb coupled motion of the ions in the trap. Quantum states can be prepared with high fidelity and measured efficiently using fluorescence detection. State preparation and detection with 99.93% fidelity have been realized in multiple systems [1,2]. Single qubit gates have been demonstrated below rigorous fault-tolerance thresholds [1,3]. Two qubit gates have been realized with more than 99.9% fidelity [4,5]. Quantum algorithms have been demonstrated on systems of 5 to 15 qubits [6–8].

  9. Flux trapping and shielding in irreversible superconductors

    International Nuclear Information System (INIS)

    Frankel, D.J.

    1978-05-01

    Flux trappings and shielding experiments were carried out on Pb, Nb, Pb-Bi, Nb-Sn, and Nb-Ti samples of various shapes. Movable Hall probes were used to measure fields near or inside the samples as a function of position and of applied field. The trapping of transverse multipole magnetic fields in tubular samples was accomplished by cooling the samples in an applied field and then smoothly reducing the applied field to zero. Transverse quadrupole and sextupole fields with gradients of over 2000 G/cm were trapped with typical fidelity to the original impressed field of a few percent. Transverse dipole fields of up to 17 kG were also trapped with similar fidelity. Shielding experiments were carried out by cooling the samples in zero field and then gradually applying an external field. Flux trapping and shielding abilities were found to be limited by two factors, the pinning strength of the material, and the susceptibility of a sample to flux jumping. The trapping and shielding behavior of flat disk samples in axial fields and thin-walled tubular samples in transverse fields was modeled. The models, which were based on the concept of the critical state, allowed a connection to be made between the pinning strength and critical current level, and the flux trapping and shielding abilities. Adiabatic and dynamic stability theories are discussed and applied to the materials tested. Good qualitative, but limited quantitative agreement was obtained between the predictions of the theoretical stability criteria and the observed flux jumping behavior

  10. Quantum information processing with trapped ions

    International Nuclear Information System (INIS)

    Haeffner, H.; Haensel, W.; Rapol, U.; Koerber, T.; Benhelm, J.; Riebe, M.; Chek-al-Kar, D.; Schmidt-Kaler, F.; Becher, C.; Roos, C.; Blatt, R.

    2005-01-01

    Single Ca + ions and crystals of Ca + ions are confined in a linear Paul trap and are investigated for quantum information processing. Here we report on recent experimental advancements towards a quantum computer with such a system. Laser-cooled trapped ions are ideally suited systems for the investigation and implementation of quantum information processing as one can gain almost complete control over their internal and external degrees of freedom. The combination of a Paul type ion trap with laser cooling leads to unique properties of trapped cold ions, such as control of the motional state down to the zero-point of the trapping potential, a high degree of isolation from the environment and thus a very long time available for manipulations and interactions at the quantum level. The very same properties make single trapped atoms and ions well suited for storing quantum information in long lived internal states, e.g. by encoding a quantum bit (qubit) of information within the coherent superposition of the S 1/2 ground state and the metastable D 5/2 excited state of Ca + . Recently we have achieved the implementation of simple algorithms with up to 3 qubits on an ion-trap quantum computer. We will report on methods to implement single qubit rotations, the realization of a two-qubit universal quantum gate (Cirac-Zoller CNOT-gate), the deterministic generation of multi-particle entangled states (GHZ- and W-states), their full tomographic reconstruction, the realization of deterministic quantum teleportation, its quantum process tomography and the encoding of quantum information in decoherence-free subspaces with coherence times exceeding 20 seconds. (author)

  11. Sediment Trapping in Estuaries

    Science.gov (United States)

    Burchard, Hans; Schuttelaars, Henk M.; Ralston, David K.

    2018-01-01

    Estuarine turbidity maxima (ETMs) are generated by a large suite of hydrodynamic and sediment dynamic processes, leading to longitudinal convergence of cross-sectionally integrated and tidally averaged transport of cohesive and noncohesive suspended particulate matter (SPM). The relative importance of these processes for SPM trapping varies substantially among estuaries depending on topography, fluvial and tidal forcing, and SPM composition. The high-frequency dynamics of ETMs are constrained by interactions with the low-frequency dynamics of the bottom pool of easily erodible sediments. Here, we use a transport decomposition to present processes that lead to convergent SPM transport, and review trapping mechanisms that lead to ETMs at the landward limit of the salt intrusion, in the freshwater zone, at topographic transitions, and by lateral processes within the cross section. We use model simulations of example estuaries to demonstrate the complex concurrence of ETM formation mechanisms. We also discuss how changes in SPM trapping mechanisms, often caused by direct human interference, can lead to the generation of hyperturbid estuaries.

  12. Probabilistic safety assessment for a generic deep geological repository for high-level waste and long-lived intermediate-level waste in clay

    International Nuclear Information System (INIS)

    Resele, G.; Holocher, J.; Mayer, G.; Hubschwerlen, N.; Niemeyer, M.; Beushausen, M.; Wollrath, J.

    2010-01-01

    Document available in extended abstract form only. In the selection procedure for the search of a final site location for the disposal of radioactive wastes, the comparison and evaluation of different potentially suitable repository systems in different types of host rocks will be an essential and crucial step. Since internationally accepted guidelines on how to perform such quantitative comparisons between repository systems with regard to their long-term safety behaviour are still lacking, in 2007 the German Federal Office for Radiation Protection launched the project 'VerSi' (Vergleichende Sicherheitsanalysen - Comparing Safety Assessments) that aims at the development of a methodology for the comparison of long-term safety assessments. A vital part of the VerSi project is the performance of long-term safety assessments for the comparison of two repository systems. The comparison focuses on a future repository for heat-generating, i.e. high-level and long-lived intermediate-level radioactive wastes in Germany. Rock salt is considered as a potential host rock for such a repository, and one repository system in VerSi is defined similarly to the potential site located in the Gorleben salt dome. Another suitable host rock formation may be clay. A generic location within the lower Cretaceous clays in Northern Germany is therefore chosen for the comparison of safety assessments within the VerSi project. The long-term safety assessment of a repository system for heat-generating radioactive waste at the generic clay location comprises different steps, amongst others: - Identifying the relevant processes in the near-field, in the geosphere and in the biosphere which are relevant for the long-term safety behaviour. - Development of a safety concept for the repository system. - Deduction of scenarios of the long-term evolution of the repository system. - Definition of statistic weights, i. e. the likelihood of occurrence of the scenarios. - Performance of a

  13. The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1999-01-01

    Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

  14. Trapping cold ground state argon atoms for sympathetic cooling of molecules

    OpenAIRE

    Edmunds, P. D.; Barker, P. F.

    2014-01-01

    We trap cold, ground-state, argon atoms in a deep optical dipole trap produced by a build-up cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of co-trapped metastable argon atoms using a new type of parametric loss spectroscopy. Using this technique we als...

  15. The nature of a deformation zone and fault rock related to a recent rockburst at Western Deep Levels Gold Mine, Witwatersrand Basin, South Africa

    Science.gov (United States)

    Stewart, R. A.; Reimold, W. U.; Charlesworth, E. G.; Ortlepp, W. D.

    2001-07-01

    In August 1998, a major deformation zone was exposed over several metres during mining operations on 87 Level (2463 m below surface) at Western Deep Levels Gold Mine, southwest of Johannesburg, providing a unique opportunity to study the products of a recent rockburst. This zone consists of three shear zones, with dip-slip displacements of up to 15 cm, that are oriented near-parallel to the advancing stope face. Jogs and a highly pulverised, cataclastic 'rock-flour' are developed on the displacement surfaces, and several sets of secondary extensional fractures occur on either side of the shear zones. A set of pinnate (feather) joints intersects the fault surfaces perpendicular to the slip vector. Microscopically, the shear zones consist of two pinnate joint sets that exhibit cataclastic joint fillings; quartz grains display intense intragranular fracturing. Secondary, intergranular extension fractures are associated with the pinnate joints. Extensional deformation is also the cause of the breccia fill of the pinnate joints. The initial deformation experienced by this zone is brittle and tensile, and is related to stresses induced by mining. This deformation has been masked by later changes in the stress field, which resulted in shearing. This deformation zone does not appear to be controlled by pre-existing geological features and, thus, represents a 'burst fracture', which is believed to be related to a seismic event of magnitude ML=2.1 recorded in July 1998, the epicentre of which was located to within 50 m of the study locality.

  16. Effect of deep levels of radiation-induced defects in silicon γ-irradiated Al-V-n-Si structures characteristics

    International Nuclear Information System (INIS)

    Buzaneva, E.V.; Vdovichenko, A.D.; Kuznetsov, G.V.; Muntyan, Yu.G.

    1985-01-01

    The effect of high energy γ-quanta irradiation on the mechanism of current transmission in Al-V-N-Si structures employed in Schottky barrier instruments has been investigated. Before irradiation the structures have been annealed in the nitrogen atmosphere at T=500 deg C. The samples have been γ-irradiated on the side of the metall film at T=20 deg C. The irradiation spectrum is continuous, maximum γ-quanta energy 50 MeV, medium one is 20 MeV. The integral flux of γ-quanta, PHIsub(γ) varied from 10 7 to 10 13 quantum/cm -2 . The volt-ampere and volt-farad characteristics have been measred. It is shown that variation of the main electrophysical characteristics of the Al-V-nSi structures upon γ-irradiation is due to deep levels of radiation defects arising in silicon with the energetic position Esub(c)-E=0.38-0.4 eV and Esub(v)+Esub(2)=0.23-0.25 → β, where Esub(c), Esub(v) are energies for the conduction band bottom and the valence band ceiling. In the 77-293 K temperature range the determining range the determining effect on current mission mechanism in irradiated structures is exerted by resonance electron tunnelling with participation of a level with the Esub(c)-Esub(1)=0.38-0.4 eV

  17. Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

    2010-01-01

    Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

  18. Observation of Hyperfine Transitions in Trapped Ground-State Antihydrogen

    CERN Document Server

    Olin, Arthur

    2015-01-01

    This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4~parts~in~$10^3$. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

  19. Observation of hyperfine transitions in trapped ground-state antihydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Collaboration: A. Olin for the ALPHA Collaboration

    2015-08-15

    This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4 parts in 10{sup 3}. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

  20. Experimental pseudo-symmetric trap EPSILON

    International Nuclear Information System (INIS)

    Skovoroda, A.A.; Arsenin, V.V.; Dlougach, E.D.; Kulygin, V.M.; Kuyanov, A.Yu.; Timofeev, A.V.; Zhil'tsov, V.A.; Zvonkov, A.V.

    2001-01-01

    Within the framework of the conceptual project 'Adaptive Plasma EXperiment' a trap with the closed magnetic field lines 'Experimental Pseudo-Symmetric trap' is examined. The project APEX is directed at the theoretical and experimental development of physical foundations for stationary thermonuclear reactor on the basis of an alternative magnetic trap with tokamak-level confinement of high β plasma. The fundamental principle of magnetic field pseudosymmetry that should be satisfied for plasma to have tokamak-like confinement is discussed. The calculated in paraxial approximation examples of pseudosymmetric curvilinear elements with poloidal direction of B isolines are adduced. The EPSILON trap consisting of two straight axisymmetric mirrors linked by two curvilinear pseudosymmetric elements is considered. The plasma currents are short-circuited within the curvilinear element what increases the equilibrium β. The untraditional scheme of MHD stabilization of a trap with the closed field lines by the use of divertor inserted into axisymmetric mirror is analyzed. The experimental installation EPSILON-OME that is under construction for experimental check of divertor stabilization is discussed. The possibility of ECR plasma production in EPSILON-OME under conditions of high density and small magnetic field is examined. (author)