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Sample records for current-voltage i-v characteristics

  1. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  2. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  3. Possible influence of the voltage dependence of the Josephson tunneling current I(V,psi) on the corresponding current-voltage characteristic

    International Nuclear Information System (INIS)

    Hahlbohm, H.D.; Luebbig, H.; Luther, H.

    1975-01-01

    Analog computer calculations of the current-voltage characteristic involving the voltage dependence of the amplitudes of the tunneling current equation explicitly, for the case of a current driven tunneling junction at different temperatures are reported on. These studies are based upon the adiabatic representation of the current-phase relation. The influence of retarding effects is not included. Therefore the computational results can lead to practical consequences at best in the range near the transition temperature. (Auth.)

  4. {sup 60}Co {gamma} irradiation effects on the current-voltage (I-V) characteristics of Al/SiO{sub 2}/p-Si (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey); Buelbuel, M.M. [Department of Physics, Faculty of Arts and Sciences, Gazi University 06500, Ankara (Turkey)

    2006-12-01

    It is well known that the exposure of any semiconductor surfaces to the {sup 60}Co {gamma}-ray irradiation causes electrically active defects. To investigate the effect of {gamma}-ray irradiation dose on the electrical characteristics of metal-insulator-semiconductor (MIS) Schottky diodes, the fabricated devices were exposed to {gamma} radiation at a dose of 2.12 kGy/h. The total dose range was from 0 to 450 kGy at room temperature. The density of interface states N {sub ss} as a function of E {sub ss}-E {sub v}, the values of series resistance R {sub s} and the bias dependence of the effective barrier height {phi} {sub e} for each dose were obtained from the forward bias I-V characteristics. Experimental results show that the {gamma}-irradiation gives rise to an increase in the zero bias barrier height {phi} {sub BO}, as the ideality factor n, R {sub s} and N {sub ss} decreases with increasing radiation dose.

  5. Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

    DEFF Research Database (Denmark)

    Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

    2003-01-01

    The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

  6. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.

    2002-01-01

    unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads......We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...

  7. Current-voltage characteristics of dendrimer light-emitting diodes

    International Nuclear Information System (INIS)

    Stevenson, S G; Samuel, I D W; Staton, S V; Knights, K A; Burn, P L; Williams, J H T; Walker, Alison B

    2010-01-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  8. Current-voltage characteristics of dendrimer light-emitting diodes

    Science.gov (United States)

    Stevenson, S. G.; Samuel, I. D. W.; Staton, S. V.; Knights, K. A.; Burn, P. L.; Williams, J. H. T.; Walker, Alison B.

    2010-09-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  9. Current-voltage characteristics of dendrimer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, S G; Samuel, I D W [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS (United Kingdom); Staton, S V; Knights, K A; Burn, P L [Department of Chemistry, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA (United Kingdom); Williams, J H T; Walker, Alison B, E-mail: a.b.walker@bath.ac.u [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom)

    2010-09-29

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  10. Current voltage characteristics of composite superconductors with high contact resistance

    International Nuclear Information System (INIS)

    Akhmetov, A.A.; Baev, V.P.

    1984-01-01

    An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

  11. Branching in current-voltage characteristics of intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Shukrinov, Yu M; Mahfouzi, F

    2007-01-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

  12. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1976-01-01

    A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

  13. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  14. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  15. Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

    Science.gov (United States)

    Andreev, Andrey

    2005-10-01

    The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

  16. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  17. Current-voltage-temperature characteristics of DNA origami

    International Nuclear Information System (INIS)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M; Zhong Hong; Norton, Michael L; Sinitskii, Alexander

    2009-01-01

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of ∼0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  18. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  19. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  20. Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

    Directory of Open Access Journals (Sweden)

    Šarūnas MEŠKINIS

    2013-03-01

    Full Text Available In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in (0 – 500 V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

  1. Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

    NARCIS (Netherlands)

    Sturiale, A.; Li, H. B. T.; Rath, J.K.; Schropp, R.E.I.; Rubinelli, F.A.

    2009-01-01

    The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions:

  2. Ab initio and empirical studies on the asymmetry of molecular current-voltage characteristics

    International Nuclear Information System (INIS)

    Hoft, R C; Armstrong, N; Ford, M J; Cortie, M B

    2007-01-01

    We perform theoretical calculations of the tunnelling current through various small organic molecules sandwiched between gold electrodes by using both a tunnel barrier model and an ab initio transport code. The height of the tunnelling barrier is taken to be the work function of gold as modified by the adsorbed molecule and calculated from an ab initio electronic structure code. The current-voltage characteristics of these molecules are compared. Asymmetry is introduced into the system in two ways: an asymmetric molecule and a gap between the molecule and the right electrode. The latter is a realistic situation in scanning probe experiments. The asymmetry is also realized in the tunnel barrier model by two distinct work functions on the left and right electrodes. Significant asymmetry is observed in the ab initio i(V) curves. The tunnel barrier i(V) curves show much less pronounced asymmetry. The relative sizes of the currents through the molecules are compared. In addition, the performance of the WKB approximation is compared to the results obtained from the exact Schroedinger solution to the tunnelling barrier problem

  3. Parameter extraction from I-V characteristics of PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Macabebe, Erees Queen B. [Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights, Quezon City 1108 (Philippines); Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, Charles J. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Dyk, E. Ernest van [Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-01-15

    Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells, as well as, CuInSe{sub 2}, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S){sub 2}- and Cu(In,Ga)(Se,S){sub 2}-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance. (author)

  4. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  5. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  6. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  7. Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes

    International Nuclear Information System (INIS)

    Rivera, P.H.; Schulz, P.A.

    1996-01-01

    It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs

  8. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  9. Current-voltage characteristics of bulk heterojunction organic solar cells: connection between light and dark curves

    Energy Technology Data Exchange (ETDEWEB)

    Boix, Pablo P.; Guerrero, Antonio; Garcia-Belmonte, Germa; Bisquert, Juan [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain); Marchesi, Luis F. [Laboratorio Interdisciplinar de, Eletroquimica e Ceramica (LIEC), Universidade Federal de Sao Carlos (Brazil); Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain)

    2011-11-15

    A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythiophene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level) voltage, which allows construction of the current-voltage characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. The Role of Interface States and Series Resistance on the Current Voltage (I-V) Characterises of Au/n-CdTe Solar Cells

    International Nuclear Information System (INIS)

    Fiat, S.

    2008-01-01

    In order to well interpret the experimentally observed nonideal Au/n-CdTe solar cells parameters such as the zero-bias barrier height ( Φ B o), ideality factor (n), interface states (Nss) and series resistance. The energy distribution profile of Nss was obtained from forward bias I-V characteristics by taking in to account the bias dependent of the effective barrier height (Φ e )at room temperature.The values of Rs obtained from Cheung's functions. The higher values of n and Rs were attributed to the existence of a native insulator layer on CdTe surface and to high density of Nss localized at semiconductor/ insulator layer interface. The experimental I-V characteristics confirmed that the the thickness of insulator layer (δ o x) ,magnitude or Rs and Nss and a particular distribution of Nss in the band gap are important parameters that influence the electrical parameters of Au/n-CdTe solar cells

  11. Comment on: "Current-voltage characteristics and zero-resistance state in 2DEG"

    OpenAIRE

    Cheremisin, M. V.

    2003-01-01

    We demonstrate that N(S)-shape current-voltage characteristics proposed to explain zero-resistance state in Corbino(Hall bar) geometry 2DEG (cond-mat/0302063, cond-mat/0303530) cannot account essential features of radiation-induced magnetoresistance oscillations experiments.

  12. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    International Nuclear Information System (INIS)

    Stoyanov, D G

    2007-01-01

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained

  13. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-08-15

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

  14. Special features of the current-voltage characteristics of short superconducting bridges

    International Nuclear Information System (INIS)

    Zhilinskii, S.; Latyshev, Y.; Nad', F.

    1981-01-01

    A study was made of variable-thickness superconducting bridges made of tin and indium. The current-voltage characteristics were determined for these bridges as a function of their length and width. The characteristics exhibited a linear region as well as an inflection. The temperature of the appearance of such an inflection depended on the length of the bridge but was independent of the bridge material

  15. Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation

    International Nuclear Information System (INIS)

    Kabyshev, A.V.; Konusov, F.V.; Lozhnikov, S.N.; Remnev, G.E.; Saltymakov, M.S.

    2009-01-01

    A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10 -10 -10 -8 s and after annealing at T an =600-700 K. (authors)

  16. Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

    1988-01-01

    Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

  17. Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

    Energy Technology Data Exchange (ETDEWEB)

    Pipinys, P; Rimeika, A [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: ftfdekanas@vpu.lt

    2008-02-27

    Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

  18. The dynamic current-voltage characteristic as a powerful tool to analyze fast phenomena in plasma

    International Nuclear Information System (INIS)

    Ivan, L. M.; Mihai-Plugaru, M.; Amarandei, G.; Aflori, M.; Dimitriu, D. G.

    2006-01-01

    The static current-voltage characteristic of an electrode immersed in plasma is obtained by slowly increasing and subsequently decreasing the potential on the electrode with respect to the plasma potential or the ground. This characteristic can give us important information about the phenomena that take place in front of the electrode. Current jumps can be evidenced which were often associated with an hysteresis effect, regions with S-type or N-type negative differential resistance, etc. The method is always used when we investigate the appearance of complex space charge configurations (CSCC) in front of an electrode immersed in plasma. However, to investigate the dynamics of such structures or other fast phenomena (like instabilities) which take place in plasma devices with frequencies of tenth, hundred kHz or more, complex investigation techniques must be used. One of the most efficient methods to investigate fast phenomena in plasma devices is the dynamic current-voltage characteristic. This is obtained by recording the time series of the current collected by the electrode when the voltage applied on it is very fast modified (most likely increased) by using a signal generator. In this way, very fast oscillations of the current can be recorded and new phenomena can be evidenced. We used this technique to study the phenomena which take place at the onset of electrostatic instabilities in Q-machine plasma, namely the potential relaxation instability (PRI) and the electrostatic ion-cyclotron instability (EICI). The obtained experimental results prove that the negative differential resistance region in the static current-voltage characteristic is the result of a nonlinear dynamics of a CSCC in form of a double layer (DL) which takes place just before the onset of the instabilities. In the case of the PRI we emphasized current jumps related with the DL appearance, which are not present in the static current-voltage characteristic at high plasma density. (authors)

  19. Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

    International Nuclear Information System (INIS)

    Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

    1992-01-01

    Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

  20. Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

    Science.gov (United States)

    Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

    2017-06-01

    The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

  1. A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl, E-mail: cekdahl@lanl.gov [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-06-15

    A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

  2. Hysteresis and negative differential resistance of the current-voltage characteristic of a water bridge

    Science.gov (United States)

    Oshurko, V. B.; Fedorov, A. N.; Ropyanoi, A. A.; Fedosov, M. V.

    2014-06-01

    It is found experimentally that the properties of nanoporous ion-exchange membranes (hysteresis of the current-voltage characteristic in the solution and negative differential resistance), which have been discussed in recent years, are not associated with the properties of the membrane. It is shown that these effects are also observed in a floating water bridge and in water-filled tubes and are apparently determined by the geometrical shape of the liquid conductor. The observed effects are explained qualitatively.

  3. Effect of electric and magnetic fields on current-voltage characteristics of a lyotropic liquid crystal

    International Nuclear Information System (INIS)

    Minasyants, M.Kh.; Badalyan, G. G.; Shahinian, A. A.

    1997-01-01

    The effect of electric and magnetic fields on current-voltage characteristics is studied for the lamellar phase in the lyotropic liquid-crystal sodium pentadecylsulfonate (SPDS)-water and lecithin-water systems. It has been found that the current-voltage characteristics of both systems have hysteresis. In the case of ionogenic SPDS, the hysteresis is formed due to ion current caused by the spatial reorientation of domains consisting of parallel lamellar fragments; in the case of lecithin, whose molecules contain dipoles, the hysteresis is formed due to the spatial reorientation of domains caused by the interaction of the resultant dipole moment of the domains with the electric field. It is shown that the introduction into lamellae of cetylpyridine bromide, which has an intrinsic magnetic moment, changes the resultant magnetic moment of domains and, thus, also the hysteresis loop of the current-voltage characteristic. The systems studied show the 'memory' effect with respect to both the electric and magnetic fields. Field-induced processes of domain reorientation were recorded by the method of small-angle x-ray scattering

  4. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses and f...

  5. The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

    Directory of Open Access Journals (Sweden)

    Eunjung Bang

    2010-11-01

    Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

  6. Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

    Science.gov (United States)

    Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

    2017-12-01

    We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

  7. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  8. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  9. Current-Voltage Characteristics of Nb2O5 nanoporous via light illumination

    Science.gov (United States)

    Samihah Khairir, Nur; Rani, Rozina Abdul; Fazlida Hanim Abdullah, Wan; Hafiz Mamat, Mohamad; Kadir, Rosmalini Abdul; Rusop, M.; Sabirin Zoolfakar, Ahmad

    2018-03-01

    This work discussed the effect of light on I-V characteristics of anodized niobium pentoxide (Nb2O5) which formed nanoporous structure film. The structure was synthesized by anodizing niobium foils in glycerol based solution with 10 wt% supplied by two different voltages, 5V and 10V. The anodized foils that contained Nb2O5 film were then annealed to obtain an orthorhombic phase for 30 minutes at 450°C. The metal contact used for I-V testing was platinum (Pt) and it was deposited using thermal evaporator at 30nm thickness. I-V tests were conducted under different condition; dark and illumination to study the effect of light on I-V characteristics of anodized nanoporous Nb2O5. Higher anodization voltage and longer anodization time resulted in higher pore dispersion and larger pore size causing the current to increase. The increase of conductivity in I-V behaviour of Nb2O5 device is also affected by the illumination test as higher light intensity caused space charge region width to increase, thus making it easier for electron transfer between energy band gap.

  10. Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

    International Nuclear Information System (INIS)

    Fistul, M.V.; Giuliani, G.F.

    1997-01-01

    We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

  11. Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

    Science.gov (United States)

    Chattopadhyay, P.

    1994-10-01

    The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

  12. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

    International Nuclear Information System (INIS)

    Shukrinov, Yu.M.; Mahfouzi, F.

    2006-01-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

  13. Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

    Science.gov (United States)

    Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

    2013-12-01

    We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

  14. Simulation of forward dark current voltage characteristics of tandem solar cells

    International Nuclear Information System (INIS)

    Rubinelli, F.A.

    2012-01-01

    The transport mechanisms tailoring the shape of dark current–voltage characteristics of amorphous and microcrystalline silicon based tandem solar cell structures are explored with numerical simulations. Our input parameters were calibrated by fitting experimental current voltage curves of single and double junction structures measured under dark and illuminated conditions. At low and intermediate forward voltages the dark current–voltage characteristics show one or two regions with a current–voltage exponential dependence. The diode factor is unique in tandem cells with the same material in both intrinsic layers and two dissimilar diode factors are observed in tandem cells with different materials on the top and bottom intrinsic layers. In the exponential regions the current is controlled by recombination through gap states and by free carrier diffusion. At high forward voltages the current grows more slowly with the applied voltage. The current is influenced by the onset of electron space charge limited current (SCLC) in tandem cells where both intrinsic layers are of amorphous silicon and by series resistance of the bottom cell in tandem cells where both intrinsic layers are of microcrystalline silicon. In the micromorph cell the onset of SCLC becomes visible on the amorphous top sub-cell. The dark current also depends on the thermal generation of electron–hole (e–h) pairs present at the tunneling recombination junction. The highest dependence is observed in the tandem structure where both intrinsic layers are of microcrystalline silicon. The prediction of meaningless dark currents at low forward and reverse voltages by our code is discussed and one solution is given. - Highlights: ► Transport mechanisms shaping the dark current-voltage curves of tandem devices. ► The devices are amorphous and microcrystalline based tandem solar cells. ► Two regions with a current-voltage exponential dependence are observed. ► The tandem J-V diode factor is the

  15. Current-voltage characteristics of a tunnel junction with resonant centers

    International Nuclear Information System (INIS)

    Ivanov, T.; Valtchinov, V.

    1994-05-01

    We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

  16. Current-Voltage Characteristics of DC Discharge in Micro Gas Jet Injected into Vacuum Environment

    International Nuclear Information System (INIS)

    Matra, K; Furuta, H; Hatta, A

    2013-01-01

    A current-voltage characteristic of direct current (DC) gas discharge operated in a micro gas jet injected into a secondary electron microscope (SEM) chamber is presented. Ar gas was injected through a 30 μm orifice gas nozzle (OGN) and was evacuated by an additional pump to keep the high vacuum environment. Gas discharges were ignited between the OGN as anode and a counter electrode of Si wafer. The discharge was self-pulsating in most of the cases while it was stable at lower pressure, larger gap length, and larger time averaged current. The self-pulsating discharge was oscillated by the RC circuit consisting of a stray capacitor and a large ballast resistor. The real time plots of voltage and current during the pulsating was investigated using a discharge model.

  17. Calculation of current-voltage characteristics of electron-capture detectors

    International Nuclear Information System (INIS)

    Hinneburg, D.; Grosse, H.J.; Leonhardt, J.; Popp, P.

    1983-01-01

    Starting from the law of conservation of charge a stationary one-dimensional non-linear differential equation system is derived, which is applied to the direct-current mode of an electron-capture detector with parallel electrode plates. The theory takes into account space-charge, recombination, and inhomogeneous ionization and it deals with three kinds of charge carriers with different mobilities (positive and negative ions, electrons). Terms due to diffusion and gas-flow losses are excluded. The equations so constructed were programmed to get a means of calculating the charge and field distributions and the current-voltage characteristics as functions of various parameters of the detectors, the attaching gas and the ionization. For two cases the results are given. (author)

  18. Nonlinear current-voltage characteristics of WO3-x nano-/micro-rods

    Science.gov (United States)

    Shen, Zhenguang; Peng, Zhijian; Zhao, Zengying; Fu, Xiuli

    2018-04-01

    A series of crystalline tungsten oxide nano-/micro-rods with different compositions of WO3, WO2.90, W19O55 (WO2.89) and W18O49 (WO2.72) but identical morphology feature were first prepared. Then, various nanoscaled electrical devices were fabricated from them by micro-fabrication through a focused ion beam technique. Interestingly, the devices from the oxygen-deficient WO3-x display significantly nonlinear current-voltage characteristics. The calculated nonlinear coefficients of the WO2.90, WO2.83, and WO2.72 varistors are 2.52, 3.32 and 4.91, respectively. The breakdown voltage of the WO2.90, WO2.83, and WO2.72 varistors are 1.93, 1.28 and 0.93 V, respectively. Such WO3-x nano-varistors might be promising for low-voltage electrical/electronic devices.

  19. Autowaves in an active two-wire line with exponential current-voltage characteristics

    International Nuclear Information System (INIS)

    Zhuravlev, V. M.

    2006-01-01

    Nonlinear wave processes in two-wire lines containing an active element with an exponential current-voltage characteristic (CVC) similar to that of a p-n junction are investigated. These lines are models of systems that are encountered in various physical and biological applications, such as biological membranes and semiconductor devices. It is shown that such systems may operate in different modes each of which has different dispersion and dissipation properties and, as a consequence, is described by autowave processes of different types. The behavior of a system in all basic modes is analyzed. For each mode, exact solutions to relevant equations are found and their differential conservation laws and intrinsic symmetries are investigated. One of common properties of such equations is the presence of a special superposition principle that describes the discrete structure of excitations in a line that consist of individual elementary excitations. It is shown that autopulses may be generated in such systems

  20. Current-Voltage Characteristics of the Composites Based on Epoxy Resin and Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Iwona Pełech

    2015-01-01

    Full Text Available Polymer composites based on epoxy resin were prepared. Multiwalled carbon nanotubes synthesized on iron-cobalt catalyst were applied as a filler in a polymer matrix. Chlorine or hydroxyl groups were incorporated on the carbon nanotubes surface via chlorination or chlorination followed by hydroxylation. The effect of functionalized carbon nanotubes on the epoxy resin matrix is discussed in terms of the state of CNTs dispersion in composites as well as electrical properties. For the obtained materials current-voltage characteristics were determined. They had a nonlinear character and were well described by an exponential-type equation. For all the obtained materials the percolation threshold occurred at a concentration of about 1 wt%. At a higher filler concentration >2 wt%, better conductivity was demonstrated by polymer composites with raw carbon nanotubes. At a lower filler concentration <2 wt%, higher values of electrical conductivity were obtained for polymer composites with modified carbon nanotubes.

  1. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  2. Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

    Institute of Scientific and Technical Information of China (English)

    Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

    2009-01-01

    We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

  3. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

    Science.gov (United States)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

    2017-12-01

    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  4. Current-voltage characteristics of a superconducting slab under a superimposed small AC magnetic field

    International Nuclear Information System (INIS)

    Matsushita, Teruo; Yamafuji, Kaoru; Sakamoto, Nobuyoshi.

    1977-01-01

    In case of applying superconductors to electric machinery or high intensity field magnets for fusion reactors, the superconductors are generally expected to be sensible to small field fluctuation besides DC magnetic field. The behavior of superconductors in DC magnetic field superimposed with small AC magnetic field has been investigated often experimentally, and the result has been obtained that the critical current at which DC flow voltage begins to appear extremely decreased or disappeared. Some theoretical investigations have been carried out on this phenomenon so far, however, their application has been limited to the region where frequency is sufficiently low or which is close to the critical magnetic field. Purpose of this report is to deal with the phenomenon in more unified way by analyzing the behavior of magnetic flux lines in a superconductor under a superimposed small AC field using the criticalstate model including viscous force. In order to solve the fundamental equation in this report, first the solution has been obtained in the quasi-static state neglecting viscous force, then about the cases that current density J is not more than Jc and J is larger than Jc, concerning the deviation from the quasi-static limit by employing successive approximation. Current-voltage characteristics have been determined by utilizing the above results. This method seems to be most promising at present except the case of extremely high frequency. (Wakatsuki, Y.)

  5. Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

    International Nuclear Information System (INIS)

    Chi, C.C.; Vanneste, C.

    1990-01-01

    A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

  6. Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

    International Nuclear Information System (INIS)

    Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

    2002-01-01

    Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

  7. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  8. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  9. Electronic Structure and I- V Characteristics of InSe Nanoribbons

    Science.gov (United States)

    Yao, A.-Long; Wang, Xue-Feng; Liu, Yu-Shen; Sun, Ya-Na

    2018-04-01

    We have studied the electronic structure and the current-voltage ( I-V) characteristics of one-dimensional InSe nanoribbons using the density functional theory combined with the nonequilibrium Green's function method. Nanoribbons having bare or H-passivated edges of types zigzag (Z), Klein (K), and armchair (A) are taken into account. Edge states are found to play an important role in determining their electronic properties. Edges Z and K are usually metallic in wide nanoribbons as well as their hydrogenated counterparts. Transition from semiconductor to metal is observed in hydrogenated nanoribbons HZZH as their width increases, due to the strong width dependence of energy difference between left and right edge states. Nevertheless, electronic structures of other nanoribbons vary with the width in a very limited scale. The I-V characteristics of bare nanoribbons ZZ and KK show strong negative differential resistance, due to spatial mismatch of wave functions in energy bands around the Fermi energy. Spin polarization in these nanoribbons is also predicted. In contrast, bare nanoribbons AA and their hydrogenated counterparts HAAH are semiconductors. The band gaps of nanoribbons AA (HAAH) are narrower (wider) than that of two-dimensional InSe monolayer and increase (decrease) with the nanoribbon width.

  10. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Biber, M

    2003-01-01

    The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

  11. Modeling of planar carbon nanotube field effect transistor and three dimensional simulation of current-voltage characteristics

    International Nuclear Information System (INIS)

    Dinh Sy Hien; Nguyen Thi Luong; Thi Tran Anh Tuan; Dinh Viet Nga

    2009-01-01

    We provide a CNTFET model with planar geometry. Planar CNTFETs constitute the majority of devices fabricated to date, mostly due to their relative simplicity and moderate compatibility with existing manufacturing technologies. We explore the possibilities of using non-equilibrium Green function method to get I-V characteristics for CNTFETs. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, intuitive display of calculation results, and in-situ data analysis methods. In this paper, we review the capabilities of simulator, and give examples of typical CNTFET 3D simulations. The I-V characteristics of CNTFET are also presented.

  12. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-11-15

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed.

  13. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    International Nuclear Information System (INIS)

    Stoyanov, D G

    2007-01-01

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed

  14. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  15. Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

    Science.gov (United States)

    Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

    2011-11-30

    We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

  16. Determination of the internal parameters of tc from the current-voltage characteristics

    International Nuclear Information System (INIS)

    Kaibyshev, V.Z.

    1986-01-01

    This paper proposes a method for determining the effective work function of a collector, the electron temperature, and the voltage drop in the interelectrode gap from the experimental vurrent-voltage characteristics (IVC). Analysis of the boundary conditions at the collector shows that as the emission from the collector increases the height of the potential jump retarding plasma electrons decrease

  17. Angular-dependent I-V characteristics in borocarbide superconductor YNi2B2C

    International Nuclear Information System (INIS)

    Chu, R M; Chen, Q Y; Chu, W K

    2006-01-01

    We present angular-dependent current-voltage (I-V) measurements in borocarbide YNi 2 B 2 C single crystals near the vortex-glass irreversible line. External magnetic fields are applied along the angle θ with respect to the c-axis. The nonlinear I-V curves reveal scaling behaviour near the transition. Using the scaling analysis, the relevant critical exponents and vortex transition temperatures are determined for all orientations. The data agrees well with the vortex-glass (VG) model. No evidence was found that supports the existence of a Bose-glass (BG) type of transition

  18. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  19. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    Energy Technology Data Exchange (ETDEWEB)

    Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2013-11-15

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

  20. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    International Nuclear Information System (INIS)

    Venkattraman, Ayyaswamy

    2013-01-01

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

  1. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

    Directory of Open Access Journals (Sweden)

    Ricardo Vera

    2010-04-01

    Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

  2. Current-voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution.

    Science.gov (United States)

    Briechle, Bernd M; Kim, Youngsang; Ehrenreich, Philipp; Erbe, Artur; Sysoiev, Dmytro; Huhn, Thomas; Groth, Ulrich; Scheer, Elke

    2012-01-01

    We report on an experimental analysis of the charge transport through sulfur-free photochromic molecular junctions. The conductance of individual molecules contacted with gold electrodes and the current-voltage characteristics of these junctions are measured in a mechanically controlled break-junction system at room temperature and in liquid environment. We compare the transport properties of a series of molecules, labeled TSC, MN, and 4Py, with the same switching core but varying side-arms and end-groups designed for providing the mechanical and electrical contact to the gold electrodes. We perform a detailed analysis of the transport properties of TSC in its open and closed states. We find rather broad distributions of conductance values in both states. The analysis, based on the assumption that the current is carried by a single dominating molecular orbital, reveals distinct differences between both states. We discuss the appearance of diode-like behavior for the particular species 4Py that features end-groups, which preferentially couple to the metal electrode by physisorption. We show that the energetic position of the molecular orbital varies as a function of the transmission. Finally, we show for the species MN that the use of two cyano end-groups on each side considerably enhances the coupling strength compared to the typical behavior of a single cyano group.

  3. The current-voltage characteristic and potential oscillations of a double layer in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, R.T.; Torven, S.

    1986-07-01

    The properties of a strong double layer in a current circuit with a capacitance and an inductance are investigated in a triple plasma device. The double layer gives rise to a region of negative differential resistance in the current-voltage characteristic of the device, and this gives non-linear oscillations in the current and the potential drop over the double layer (PhiDL). For a sufficiently large circuit inductance PhiDL reaches an amplitude given by the induced voltage (-LdI/dt) which is much larger than the circuit EMF due to the rapid current decrease when PhiDL increases. A variable potential minimum exists in the plasma on the low potential side of the double layer, and the depth of the minimum increases when PhiDL increases. An increasing fraction of the electrons incident at the double layer are then reflected, and this is found to be the main process giving rise to the negative differential resistance. A qualitative model for the variation of the minimum potential with PhiDL is also proposed. It is based on the condition that the minimum potential must adjust itself self-consistentely so that quasi-neutrality is maintained in the plasma region where the minimum is assumed. (authors)

  4. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Science.gov (United States)

    Bhowmik, R. N.; Vijayasri, G.

    2015-06-01

    We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  5. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R.Venkataraman Nagar, Kalapet, Puducherry - 605 014 (India)

    2015-06-15

    We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  6. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Directory of Open Access Journals (Sweden)

    R. N. Bhowmik

    2015-06-01

    Full Text Available We have studied current-voltage (I-V characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP 0.345(± 0.001 V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%, magnetoresistance (70-135 % and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  7. I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7 Thin Films

    Directory of Open Access Journals (Sweden)

    M. Erkovan

    2013-01-01

    Full Text Available Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100 by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V measurements of metal-semiconductor (MS Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n, barrier height (ϕ, and contact resistance values were determined by using thermionic emission (TE theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

  8. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1977-01-01

    Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

  9. Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

    DEFF Research Database (Denmark)

    Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

    2007-01-01

    We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

  10. I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

    Science.gov (United States)

    Laws, Crystal; Mitchell, Cody; Hunt, Mitchell; Ho, Fat D.; MacLeod, Todd C.

    2012-01-01

    I-V characteristics for FeFET different than that of MOSFET Ferroelectric layer features hysteresis trend whereas MOSFET behaves same for both increasing and decreasing VGS FeFET I-V characteristics doesn't show dependence on VDS A Transistor with different channel length and width as well as various resistance and input voltages give different results As resistance values increased, the magnitude of the drain current decreased.

  11. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  12. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  13. Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

    International Nuclear Information System (INIS)

    Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

    2010-01-01

    Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

  14. Manifestation of vortex depinning transition in nonlinear current-voltage characteristics of polycrystalline superconductor Y1-xPrxBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Stari, C.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2008-01-01

    We present our recent results on the temperature dependence of current-voltage characteristics for polycrystalline Y 1-x Pr x Ba 2 Cu 3 O 7-δ superconductors with x=0.0, 0.1 and 0.3. The experimental results are found to be reasonably well fitted for all samples by a power like law of the form V=R(I-I c ) a(T) . Here, we assume that a(T)=1+Φ 0 I C (T)/2πk B T and I C (T)=I C (0)(1-T/T C ) 3/2 for the temperature dependences of the power exponent and critical current, respectively. According to the theoretical interpretation of the obtained results, nonlinear deviation of our current-voltage characteristics curves from Ohmic behavior (with a(T C )=1) below T C is attributed to the manifestation of dissipation processes. They have a characteristic temperature T p defined via the power exponent as a(T p )=2 and are related to the current induced depinning of Abrikosov vortices. Both T C (x) and T p (x) are found to decrease with an increase of Pr concentration x reflecting deterioration of the superconducting properties of the doped samples

  15. I-V characteristic of electronic transport through a quantum dot chain: The role of antiresonance

    International Nuclear Information System (INIS)

    Liu Yu; Zheng Yisong; Gong Weijiang; Lue Tianquan

    2006-01-01

    The I-V spectrum of electronic transport through a quantum dot chain is calculated by means of the nonequilibrium Green function technique. In such a system, two arbitrary quantum dots are connected with two electron reservoirs through leads. When the dot-lead coupling is very weak, a series of discrete resonant peaks in electron transmission function cause staircase-like I-V characteristic. On the contrary, in the relatively strong dot-lead coupling regime, stairs in the I-V spectrum due to resonance vanish. However, when there are some dangling quantum dots in the chain outside two leads, the antiresonance which corresponds to the zero points of electron transmission function brings about novel staircase characteristic in the I-V spectrum. Moreover, two features in the I-V spectrum arising from the antiresonance are pointed out, which are significant for possible device applications. One is the multiple negative differential conductance regions, and another is regarding to create a highly spin-polarized current through the quantum dot chain by the interplay of the resonance and antiresonance. Finally, we focus on the role that the many-body effect plays on the antiresonance. Our result is that the antiresonance remains when the electron interaction is considered to the second order approximation

  16. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    International Nuclear Information System (INIS)

    Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Alfano, Robert; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.

    2014-01-01

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm 2 ) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm 2 ) is found to be superlinear, showing a relation of I = P n , where n = 1.4.

  17. Ab initio I-V characteristics of short C-20 chains

    DEFF Research Database (Denmark)

    Roland, C.; Larade, B.; Taylor, Jeremy Philip

    2002-01-01

    We have calculated the I-V characteristics of short chains of C-20 molecular cages between Al and Au leads with an ab initio formalism. The results indicate that a linear chain of such molecules acts primarily as metallic nanowires. The transmission, however, depends sensitively both...

  18. Understanding S-shaped current-voltage characteristics of organic solar cells: Direct measurement of potential distributions by scanning Kelvin probe

    Science.gov (United States)

    Saive, Rebecca; Mueller, Christian; Schinke, Janusz; Lovrincic, Robert; Kowalsky, Wolfgang

    2013-12-01

    We present a comparison of the potential distribution along the cross section of bilayer poly(3-hexylthiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C61 (P3HT/PCBM) solar cells, which show normal and anomalous, S-shaped current-voltage (IV) characteristics. We expose the cross sections of the devices with a focussed ion beam and measure them with scanning Kelvin probe microscopy. We find that in the case of S-shaped IV-characteristics, there is a huge potential drop at the PCBM/Al top contact, which does not occur in solar cells with normal IV-characteristics. This behavior confirms the assumption that S-shaped curves are caused by hindered charge transport at interfaces.

  19. Understanding S-shaped current-voltage characteristics of organic solar cells: Direct measurement of potential distributions by scanning Kelvin probe

    International Nuclear Information System (INIS)

    Saive, Rebecca; Kowalsky, Wolfgang; Mueller, Christian; Schinke, Janusz; Lovrincic, Robert

    2013-01-01

    We present a comparison of the potential distribution along the cross section of bilayer poly(3-hexylthiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C61 (P3HT/PCBM) solar cells, which show normal and anomalous, S-shaped current-voltage (IV) characteristics. We expose the cross sections of the devices with a focussed ion beam and measure them with scanning Kelvin probe microscopy. We find that in the case of S-shaped IV-characteristics, there is a huge potential drop at the PCBM/Al top contact, which does not occur in solar cells with normal IV-characteristics. This behavior confirms the assumption that S-shaped curves are caused by hindered charge transport at interfaces

  20. Simulation of current-voltage characteristics of a MOS structure considering the tunnel transport of carriers in semiconductor

    International Nuclear Information System (INIS)

    Vexler, M I

    2006-01-01

    The effect of a tunnel charge transport in the near-surface region of silicon on the electrical characteristics of MOS structures with a 2-3 nm insulator layer is studied theoretically. An equilibrium condition for the substrate is assumed. The cases of an Al and polySi gate are considered. The possibility of a 'double' (in Si and through SiO 2 ) tunnelling expands the energy range of transported particles, which increases one of the components of the total tunnel current. The proposed model allows for the improved simulation of gate current in MOSFETs, which is especially important for highly-doped substrates

  1. Effect of temperature on current voltage characteristics in ZnO/CdS/CuGaSe2 single crystal solar cells

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2005-03-01

    Current voltage characteristics of Zn O/CdS/CuGaSe 2 single crystal solar cells, which have gone through repetitive annealing treatment and have been measured at different values of temperature and illumination intensity, were analyzed using the two-diode equation. The analysis revealed that current transport in these cells is governed by two competing transport mechanisms relating strongly to interface states and that both mechanisms are thermally and light activated. These two mechanisms are interface recombination and tunneling enhanced interface recombination. The activation energy values of the saturation current density in both mechanisms were calculated from the temperature dependence of the parameters describing each of them. It was found that these values depend on temperature and illumination intensity. Furthermore, the behavior of the photovoltaic parameters could be explained relying on the results of the analysis. (Authors)

  2. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

  3. Thickness dependence of the poling and current-voltage characteristics of paint films made up of lead zirconate titanate ceramic powder and epoxy resin

    Science.gov (United States)

    Egusa, Shigenori; Iwasawa, Naozumi

    1995-11-01

    A specially prepared paint made up of lead zirconate titanate (PZT) ceramic powder and epoxy resin was coated on an aluminum plate and was cured at room temperature, thus forming the paint film of 25-300 μm thickness with a PZT volume fraction of 53%. The paint film was then poled at room temperature, and the poling behavior was determined by measuring the piezoelectric activity as a function of poling field. The poling behavior shows that the piezoelectric activity obtained at a given poling field increases with an increase in the film thickness from 25 to 300 μm. The current-voltage characteristic of the paint film, on the other hand, shows that the increase in the film thickness leads not only to an increase in the magnitude of the current density at a given electric field but also to an increase in the critical electric field at which the transition from the ohmic to space-charge-limited conduction takes place. This fact indicates that the amount of the space charge of electrons injected into the paint film decreases as the film thickness increases. Furthermore, comparison of the current-voltage characteristic of the paint film with that of a pure epoxy film reveals that the space charge is accumulated largely at the interface between the PZT and epoxy phases in the paint film. On the basis of this finding, a model is developed for the poling behavior of the paint film by taking into account a possible effect of the space-charge accumulation and a broad distribution of the electric field in the PZT phase. This model is shown to give an excellent fit to the experimental data of the piezoelectric activity obtained here as a function of poling field and film thickness.

  4. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  5. A model of electric breakdown in polycrystalline semiconductors with highly nonlinear I - V characteristics

    International Nuclear Information System (INIS)

    Yildirim, E.H.; Tanatar, B.; Canessa, E.

    1993-07-01

    A deterministic algorithm to study the nonlinear current-voltage characteristics of polycrystalline semiconductors, such as ZnO-based metal oxide varistors, under dc bias and at room temperature is developed based on the electrical properties of individual grain boundaries. Assuming a thermionic emission type mechanism between individual grains and a nonuniform distribution of barrier heights at grain boundaries, the set of nonlinear Kirchhoff equations that determines the macroscopic current across the specimen and the nonlinearity coefficient α is solved numerically. The applied voltage dependence of the barrier height is found to be crucial to obtain α values reaching ∼50, indicating high nonlinearity as required by potential commercial applications. (author). 20 refs, 3 figs

  6. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  7. Current-Voltage and Floating-Potential characteristics of cylindrical emissive probes from a full-kinetic model based on the orbital motion theory

    Science.gov (United States)

    Chen, Xin; Sánchez-Arriaga, Gonzalo

    2018-02-01

    To model the sheath structure around an emissive probe with cylindrical geometry, the Orbital-Motion theory takes advantage of three conserved quantities (distribution function, transverse energy, and angular momentum) to transform the stationary Vlasov-Poisson system into a single integro-differential equation. For a stationary collisionless unmagnetized plasma, this equation describes self-consistently the probe characteristics. By solving such an equation numerically, parametric analyses for the current-voltage (IV) and floating-potential (FP) characteristics can be performed, which show that: (a) for strong emission, the space-charge effects increase with probe radius; (b) the probe can float at a positive potential relative to the plasma; (c) a smaller probe radius is preferred for the FP method to determine the plasma potential; (d) the work function of the emitting material and the plasma-ion properties do not influence the reliability of the floating-potential method. Analytical analysis demonstrates that the inflection point of an IV curve for non-emitting probes occurs at the plasma potential. The flat potential is not a self-consistent solution for emissive probes.

  8. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  9. YBCO single crystals I-V characteristics nonlinearity and Nelson-Kosterlitz jump

    International Nuclear Information System (INIS)

    Kuzmichev, N.D.; Vasyutin, M.A.; Golovashkin, A.I.

    2007-01-01

    Temperature dependences of I-V characteristics and voltage harmonics V n (T) (n = 2, 3, ...) have been investigated in magnetic fields up to 200 Oe for single crystals YBa 2 Cu 3 O 7-x . It was shown that V n (T) had asymmetric peak form with maximum at T* = 92.0 K. Amplitudes of V n (T) were decreased in magnetic fields. The results were explained on the base of the Berezinskii-Kosterlitz-Thouless (BKT) transition model. It was shown that T* coincided with the BKT transition temperature T BKT . The asymmetric peaks of V n (T) are a consequence of the Nelson-Kosterlitz jump

  10. Current diffusion in a superconduting composite with a smeared I-V characteristic

    International Nuclear Information System (INIS)

    Keilin, V.E.; Romanovskii, V.R.

    1992-01-01

    Results are presented from numerical and analytical calculations of current injection into a superconducting composite of circular cross section with homogeneous properties throughout the cross section. A wire with an I-V characteristic approximated by an exponential dependence is examined. In the numerical solution, the joint occurrence of thermal and electromagnetic processes is taken into account. The calculations carried out for different current injection rates, parameters of the I-V characteristics, and heat transfer coefficients revealed: the existence of a characteristic limit current, below which the wire remains in a superconducting state after termination of current injection and above which the wire undergoes a transition to the normal state; this is somewhat below the cut-off current; the existence of a finite current at any small yet finite surface heat transfer coefficient. An analytical solution of the problem, based of the derived stability criterion, has made if possible to write an approximate relation between the limit currents and the initial parameters. Unlike previously reported results, this study takes into account the tolerable overheating of the wire, which depends on the depth of current flow, the specific heat of the wire, and its thermal and electrical conductivities

  11. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

    Science.gov (United States)

    Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

    2018-09-01

    We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

  12. The i-V curve characteristics of burner-stabilized premixed flames: detailed and reduced models

    KAUST Repository

    Han, Jie

    2016-07-17

    The i-V curve describes the current drawn from a flame as a function of the voltage difference applied across the reaction zone. Since combustion diagnostics and flame control strategies based on electric fields depend on the amount of current drawn from flames, there is significant interest in modeling and understanding i-V curves. We implement and apply a detailed model for the simulation of the production and transport of ions and electrons in one-dimensional premixed flames. An analytical reduced model is developed based on the detailed one, and analytical expressions are used to gain insight into the characteristics of the i-Vcurve for various flame configurations. In order for the reduced model to capture the spatial distribution of the electric field accurately, the concept of a dead zone region, where voltage is constant, is introduced, and a suitable closure for the spatial extent of the dead zone is proposed and validated. The results from the reduced modeling framework are found to be in good agreement with those from the detailed simulations. The saturation voltage is found to depend significantly on the flame location relative to the electrodes, and on the sign of the voltage difference applied. Furthermore, at sub-saturation conditions, the current is shown to increase linearly or quadratically with the applied voltage, depending on the flame location. These limiting behaviors exhibited by the reduced model elucidate the features of i-V curves observed experimentally. The reduced model relies on the existence of a thin layer where charges are produced, corresponding to the reaction zone of a flame. Consequently, the analytical model we propose is not limited to the study of premixed flames, and may be applied easily to others configurations, e.g.~nonpremixed counterflow flames.

  13. Annealing effect on I-V characteristic of n-ZnO-p-InSe heterojunction

    Directory of Open Access Journals (Sweden)

    Kovalyuk Z. D.

    2015-12-01

    Full Text Available The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes of metal atoms sandwiched between two planes of chalcogen atoms (Se-In-In-Se. The absence of dangling bonds on InSe cleaved surface makes it possible to use this semiconductor as a substrate for fabrication of heterostructures based on semiconductor materials with different symmetries and lattice spacings. Zinc oxide (ZnO is the most suitable material for window materials and solar cells buffer layers application due to its marvelous transparency in the range of visible region. InSe single crystals were grown by the Bridgman technique from a nonstoichiometric melt and characterized by a pronounced layered structure along the whole length of a sample. ZnO thin oxide film was formed on freshly cleaved van der Waals surface of InSe layered crystal. n-ZnO-p-InSe heterostructure was prepared by the method of high-frequency magnetron sputtering. Sensitivity spectral areas were identified by MDR-3 monochromator with a resolution of 2.6 nm/mm. The current-voltage characteristics of the n-ZnO-p-InSe heterostructures showed a clearly pronounced diode character. In the forward bias of the initial samples, the diode factor had the value 3.7 at room temperature. It is shown that vacuum low-temperature annealing reduces shunt currents of the heterojunction, which is reflected in the decrease in the values of n from 3.7 to 2.7.

  14. Current-voltage curves of gold quantum point contacts revisited

    DEFF Research Database (Denmark)

    Hansen, K.; Nielsen, S K.; Brandbyge, Mads

    2000-01-01

    We present measurements of current-voltage (I-V) curves on gold quantum point contacts (QPCs) with a conductance up to 4 G(0) (G(0) = 2e(2)/h is the conductance quantum) and voltages up to 2 V. The QPCs are formed between the gold tip of a scanning tunneling microscope and a Au(110) surface under...

  15. A general modeling method for I-V characteristics of geometrically and electrically configured photovoltaic arrays

    International Nuclear Information System (INIS)

    Liu Guangyu; Nguang, Sing Kiong; Partridge, Ashton

    2011-01-01

    Highlights: → A novel and general method is proposed for modeling PV arrays or modules. → A robust algorithm is used for the first time to improve the convergence to solution. → Auxiliary functions in other general methods are not compulsory in our method. → It is novel that geometric configuration is also incorporated. → A case study is performed to show the approach's advantages and unique features. - Abstract: A general method for modeling typical photovoltaic (PV) arrays and modules is proposed to find the exact current and voltage relationship of PV arrays or modules of geometrically and electrically different configurations. Nonlinear characteristic equations of electrical devices in solar array or module systems are numerically constructed without adding any virtual electrical components. Then, a robust damped Newton method is used to find exact I-V relationship of these general nonlinear equations, where the convergence is guaranteed. The model can deal with different mismatch effects such as different configurations of bypass diodes, and partial shading. Geometry coordinates of PV components are also considered to facilitate the modeling of the actual physical configuration. Simulation of a PV array with 48 modules, partially shaded by a concrete structure, is performed to verify the effectiveness and advantages of the proposed method.

  16. Statistically Modeling I-V Characteristics of CNT-FET with LASSO

    Science.gov (United States)

    Ma, Dongsheng; Ye, Zuochang; Wang, Yan

    2017-08-01

    With the advent of internet of things (IOT), the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physical models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physical models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.

  17. Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model

    Science.gov (United States)

    Korucu, Demet; Turut, Abdulmecit; Efeoglu, Hasan

    2013-04-01

    The current-voltage (I-V) characteristics of Au/n-GaAs contacts prepared with photolithography technique have been measured in the temperature range of 80-320 K. The ideality factor and barrier height (BH) values have remained almost unchanged between 1.04 and 1.10 and at a value of about 0.79 eV at temperatures above 200 K, respectively. Therefore, the ideality factor values near unity say that the experimental I-V data are almost independent of the sample temperature, that is, contacts have shown excellent Schottky diode behavior above 200 K. An abnormal decrease in the experimental BH Φb and an increase in the ideality factor with a decrease in temperature have been observed below 200 K. This behavior has been attributed to the barrier inhomogeneity by assuming a Gaussian distribution of nanometer-sized patches with low BH at the metal-semiconductor interface. The barrier inhomogeneity assumption is also confirmed by the linear relationship between the BH and the ideality factor. According to Tung’s barrier inhomogeneity model, it has been seen that the value of σT=7.41×10-5 cm2/3 V1/3from ideality factor versus (kT)-1 curve is in close agreement with σT=7.95×10-5 cm2/3 V1/3 value from the Φeff versus (2kT)-1 curve in the range of 80-200 K. The modified Richardson ln(J0/T2)-(qσT)2(Vb/η)2/3/[2(kT)2] versus (kT)-1 plot, from Tung’s Model, has given a Richardson constant value of 8.47 A cm-2 K-2which is in very close agreement with the known value of 8.16 A cm-2 K-2 for n-type GaAs; considering the effective patch area which is significantly lower than the entire geometric area of the Schottky contact, in temperature range of 80-200 K. Thus, it has been concluded that the use of Tung’s lateral inhomogeneity model is more appropriate to interpret the temperature-dependent I-V characteristics in the Schottky contacts.

  18. On the I-V characteristic in the non-linear tenary mixture model for polycrystalline semiconductors

    International Nuclear Information System (INIS)

    Nguyen Van Lien; Nguyen Hoai Nam

    2000-08-01

    A simple expression for the voltage dependence of grain-boundary potential barrier heights is proposed and the Effective Medium Approximation is extended for calculating the I-V characteristic in tenary mixtures of highly non-linear circuit elements. Numerical calculations are performed for the case of polycrystalline semiconductors, such as ZnO-based varistors, where the thermoionic emission is believed to be the dominant mechanism for the electric conduction across double Schottky barriers at room temperature. (author)

  19. The changes of capacitance-loss and current-voltage characteristics of LaMnO3+δ/SrTiO3:Nb heterojunctions exposed to ambient air

    International Nuclear Information System (INIS)

    Cui Yimin; Wang Rongming

    2010-01-01

    Effects of moisture absorption on capacitance-loss and current-voltage characteristics of LaMnO 3+δ /SrTiO 3 :Nb heterojunction had been investigated after the heterojunctions were exposed to ambient air. The moisture-absorption-induced increases in loss tangent and breakdown voltage were observed, whereas no changes were found on capacitance and diffusion voltage. These results were discussed by the decrease of oxygen ions in LaMnO 3+δ and the generation of hydroxide ions at grain boundaries. This work will favor both electronic transport analysis and future device applications.

  20. The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

    Science.gov (United States)

    Caliskan, S; Laref, A

    2014-07-14

    Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

  1. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  2. An investigation of characteristics parameters of Ag/p-Si Schottky diodes based on I-V-T and C-V-T measurements

    International Nuclear Information System (INIS)

    Selcuk, A.B.

    2004-01-01

    The current-voltage (I-V) measurements on Ag/p-Si Schottky barrier diodes in the temperature range 125-300 K were carried out. The experimental values of n and Φ b 0 were determined from intercepts and slopes of the forward bias In I-V plot at each temperature. The Φ b 0 and n determined from semilog-forwaid I- V plots were found to be a strong function of temperature. The ideality factor n was found to increase, while the Φ b 0 decrease with decreasing temperature. The flat-band barrier height Φ b f and series resistance R s are also determined from the I-V measurements. Furthermore, the diffusion potential V D , experimental carrier doping density N A , Fermi level E F and barrier height Φ C V are determined from the C- V measurements. It is shown that the values of R s estimated from Cheung's method were strongly temperature dependent decreased with increasing temperature

  3. Analysis of series resistance effects on forward I - V and C - V characteristics of mis type diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Tekeli, Z.; Karadeniz, S.; Tugluoglu, N.; Ercan, I.

    2002-01-01

    In order to determine the series resistance R s , we have followed Lie et al., Cheung et al. and Kang et al., from the plot of I vs dV/dLn(I) which was linear curve over a wide range of current values at each temperature. The values of Rs were obtained from the slope of the linear parts of the curves and then the series resistance at each temperature has been evaluated at Ln(I) vs (V-IR s ) curves. The curves are linear over a wide range of voltage. The most reliable values of ideality factor n and reverse saturation current Is were then determined. In addition to role of series resistance on the C-V and G-V characteristics of diode have been investigated. Both C-V and G-V measurements show that the measured capacitance and conductance seriously varies with applied bias and frequency due to presence of R s . The density of interface states, barrier height and series resistance from the forward bias I-V characteristics using this method agrees very well with that obtained from the capacitance technique. It is clear that ignoring the series resistance (device with high series resistance) can lead to significant errors in the analysis of the I-V-T, C-V-f and G-V-f characteristics

  4. Understanding S-Shaped Current-Voltage Characteristics in Organic Solar Cells Containing a TiOx Inter layer with Impedance Spectroscopy and Equivalent Circuit Analysis

    NARCIS (Netherlands)

    Ecker, Bernhard; Egelhaaf, Hans-Joachim; Steim, Roland; Parisi, Juergen; von Hauff', Elizabeth

    2012-01-01

    In this study we propose an equivalent circuit model to describe S-shaped current–voltage (I–V) characteristics in inverted solar cells with a TiOx interlayer between the cathode and the poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester active layer. Initially the solar cells

  5. I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling.

    Science.gov (United States)

    Wakai, Taiga; Sakamoto, Shoichi; Tomiya, Mitsuyoshi

    2018-07-04

    We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction (GS/h-BN) and 11-armchair graphene nanoribbon/h-BN heterojunction (11-AGNR/h-BN), which are carried out using the density functional theory (DFT) method and the non-equilibrium Green's function (NEGF) technique. Since 11-AGNR belongs to the conductive (3n-1)-family of AGNR, both are metallic nanomaterials with two transverse arrays of h-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions (TF) and I-[Formula: see text] characteristics of GS/h-BN and 11-AGNR/h-BN are calculated by DFT and NEGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-[Formula: see text] characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors. The results of our first principle calculations are also compared with 1D Dirac equation model for the double barrier system. The model explains most of the peaks of the transmission functions nearby the Fermi energy quite well. They are due to quantum tunneling.

  6. Nonlinear I-V characteristics of doped SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dhage, S.R.; Choube, Vandana; Ravi, V

    2004-07-15

    When tin oxide is doped with Sb{sub 2}O{sub 3} and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO{sub 2}. Antimony oxide acts as a donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 {mu}m and the grain boundary barrier height (PHI{sub B}) is in the range of 0.5 eV. The observed nonlinear coefficient ({alpha}) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm{sup -1}.

  7. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  8. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2017-12-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  9. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2018-06-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  10. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    International Nuclear Information System (INIS)

    Prevosto, L.; Mancinelli, B.; Kelly, H.

    2013-01-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core

  11. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    Energy Technology Data Exchange (ETDEWEB)

    Prevosto, L.; Mancinelli, B. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Kelly, H. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Instituto de Física del Plasma (CONICET), Departamento de Física, Facultad de Ciencias Exactas y Naturales (UBA) Ciudad Universitaria Pab. I, 1428 Buenos Aires (Argentina)

    2013-12-15

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  12. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

    Science.gov (United States)

    Prevosto, L; Kelly, H; Mancinelli, B

    2013-12-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  13. Intelligent fault diagnosis of photovoltaic arrays based on optimized kernel extreme learning machine and I-V characteristics

    International Nuclear Information System (INIS)

    Chen, Zhicong; Wu, Lijun; Cheng, Shuying; Lin, Peijie; Wu, Yue; Lin, Wencheng

    2017-01-01

    Highlights: •An improved Simulink based modeling method is proposed for PV modules and arrays. •Key points of I-V curves and PV model parameters are used as the feature variables. •Kernel extreme learning machine (KELM) is explored for PV arrays fault diagnosis. •The parameters of KELM algorithm are optimized by the Nelder-Mead simplex method. •The optimized KELM fault diagnosis model achieves high accuracy and reliability. -- Abstract: Fault diagnosis of photovoltaic (PV) arrays is important for improving the reliability, efficiency and safety of PV power stations, because the PV arrays usually operate in harsh outdoor environment and tend to suffer various faults. Due to the nonlinear output characteristics and varying operating environment of PV arrays, many machine learning based fault diagnosis methods have been proposed. However, there still exist some issues: fault diagnosis performance is still limited due to insufficient monitored information; fault diagnosis models are not efficient to be trained and updated; labeled fault data samples are hard to obtain by field experiments. To address these issues, this paper makes contribution in the following three aspects: (1) based on the key points and model parameters extracted from monitored I-V characteristic curves and environment condition, an effective and efficient feature vector of seven dimensions is proposed as the input of the fault diagnosis model; (2) the emerging kernel based extreme learning machine (KELM), which features extremely fast learning speed and good generalization performance, is utilized to automatically establish the fault diagnosis model. Moreover, the Nelder-Mead Simplex (NMS) optimization method is employed to optimize the KELM parameters which affect the classification performance; (3) an improved accurate Simulink based PV modeling approach is proposed for a laboratory PV array to facilitate the fault simulation and data sample acquisition. Intensive fault experiments are

  14. Hole-transport limited S-shaped I-V curves in planar heterojunction organic photovoltaic cells

    Science.gov (United States)

    Zhang, Minlu; Wang, Hui; Tang, C. W.

    2011-11-01

    Current-voltage (I-V) characteristics of planar heterojunction organic photovoltaic cells based on N',N'-Di-[(1-naphthyl)-N',N'-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPB) and C60 are investigated. Through variation of the layer thickness and composition, specifically chemical doping NPB with MoOx, we show that the hole-transport limitation in the NPB layer is the determining factor in shaping the I-V characteristics of NPB/C60 cells.

  15. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  16. Investigation of diode parameters using I-V and C-V characteristics of In/SiO{sub 2}/p-Si (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yueksel, O.F. [Department of Physics, Faculty of Arts and Science, Selcuk University, Kampus, Konya 42075 (Turkey)], E-mail: fyuksel@selcuk.edu.tr; Selcuk, A.B.; Ocak, S.B. [PK, 14 Etlik, Ankara (Turkey)

    2008-08-01

    A study on interface states density distribution and characteristic parameters of the In/SiO{sub 2}/p-Si (MIS) capacitor has been made. The thickness of the SiO{sub 2} film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 {omega} and 0.592 eV, respectively. The energy distribution of the interface state density D{sub it} was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44x10{sup 13} eV{sup -1} cm{sup -2} in 0.329-E{sub v} eV to 1.11x10{sup 13} eV{sup -1} cm{sup -2} in 0.527-E{sub v} eV at room temperature. Furthermore, the values of interface state density D{sub it} obtained by the Hill-Coleman method from the C-V characteristics range from 52.9x10{sup 13} to 1.11x10{sup 13} eV{sup -1} cm{sup -2} at a frequency range of 30kHz-1 MHz. These values of D{sub it} and R{sub s} were responsible for the non-ideal behaviour of I-V and C-V characteristics.

  17. Monitoring and Fault Detection in Photovoltaic Systems Based On Inverter Measured String I-V Curves

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Kerekes, Tamas

    2015-01-01

    Most photovoltaic (PV) string inverters have the hardware capability to measure at least part of the current-voltage (I-V) characteristic curve of the PV strings connected at the input. However, this intrinsic capability of the inverters is not used, since I-V curve measurement and monitoring...... functions are not implemented in the inverter control software. In this paper, we aim to show how such a functionality can be useful for PV system monitoring purposes, to detect the presence and cause of power-loss in the PV strings, be it due to shading, degradation of the PV modules or balance......-of-system components through increased series resistance losses, or shunting of the PV modules. To achieve this, we propose and experimentally demonstrate three complementary PV system monitoring methods that make use of the I-V curve measurement capability of a commercial string inverter. The first method is suitable...

  18. Manifestation of π-contacts in magnetic field dependence of I-V characteristics for proximity-type 2D Josephson junction array

    International Nuclear Information System (INIS)

    Rivera, V.A.G.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

    2009-01-01

    Results on the temperature and magnetic field dependence of current-voltage characteristics (CVC) are presented for SNS-type 2D ordered array of Nb-Cu 0.95 Al 0.05 -Nb junctions. The critical current I C (T,H) and the power exponent a(T,H)=1+Φ 0 I C (T,H)/2k B T of the nonlinear CVC law V=R[I-I C (T,H)] a(T,H) are found to have a maximum at non-zero value of applied magnetic field H p =225 Oe, which is attributed to manifestation of π-type Josephson contacts in our sample.

  19. Negative resistance in I-V characteristics and 2D vortex dynamics in a-W/Si multilayer superconductors with periodic antidot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Kurosu, Y.; Yokoyama, M.; Kuwasawa, Y.; Matsuda, S.; Nojima, T

    2003-05-01

    We have examined the vortex dynamics in W/Si multilayers with the arrays of antidots in the form of square and triangular lattices. In the measurements of I-V characteristics as a function of temperature T and magnetic field H, we find a specific feature that the V(I) curves coincide irrespective of T. Especially the V(I) curves with a negative slope are observed in the multilayer with triangular arrays.

  20. Random instabilities of current-voltage curves of BSCCO-2223/Ag multifilamentary tapes in LN2 at 77 K

    CERN Document Server

    Usak, P

    2003-01-01

    The measurement of the current-voltage (I-V) characteristics of BSCCO-2223/Ag multifilamentary tapes in a silver matrix has been performed on short samples (of several centimetres) as well as on long tape (1 m), wound in the form of a helical one-layer coil. Measurements at 77 K and in zero external magnetic field have revealed good reproducibility of the I-V hysteresis in most runs. Nevertheless, strange irregularities have sometimes been observed in the I-V curve behaviour during current ramping up and down. Quasi-reproducible drops from the ascending hysteretic branch in the direction of the descending one have been measured at higher voltage levels (approx 1 mV cm sup - sup 1) on the curve measured on the helical coil. These have recently been explained by a sudden change in the heat transfer coefficient [1]. Rarely and non-reproducibly we have also observed these drops on short samples at E approx 1 x 10 sup - sup 2 V m sup - sup 1 , (and even under 1 x 10 sup - sup 3 V m sup - sup 1). The accidental dro...

  1. Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

    Science.gov (United States)

    Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

    2013-11-13

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

  2. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  3. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2012-01-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  4. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-02-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  5. Determination of PV Generator I-V/P-V Characteristic Curves Using a DC-DC Converter Controlled by a Virtual Instrument

    Directory of Open Access Journals (Sweden)

    E. Durán

    2012-01-01

    Full Text Available A versatile measurement system for systematic testing and measurement of the evolution of the I-V characteristic curves of photovoltaic panels or arrays (PV generators is proposed in this paper. The measurement system uses a circuit solution based on DC-DC converters that involves several advantages relative to traditional methods: simple structure, scalability, fast response, and low cost. The measurement of the desired characteristics of PV generators includes high speed of response and high fidelity. The prototype system built is governed by a microcontroller, and experimental results prove the proposed measurement system useful. A virtual instrument (VI was developed for full system control from a computer. The developed system enables monitoring the suitable operation of a PV generator in real time, since it allows comparing its actual curves with those provided by the manufacturer.

  6. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Science.gov (United States)

    Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

    2014-09-01

    This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  7. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Directory of Open Access Journals (Sweden)

    Szmyd Janusz S.

    2014-09-01

    Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  8. An accurate mobility model for the I-V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

    International Nuclear Information System (INIS)

    Chingyuan Wu; Yeongwen Daih

    1985-01-01

    In this paper an analytical mobility model is developed for the I-V characteristics of n-channel enhancement-mode MOSFETs, in which the effects of the two-dimensional electric fields in the surface inversion channel and the parasitic resistances due to contact and interconnection are included. Most importantly, the developed mobility model easily takes the device structure and process into consideration. In order to demonstrate the capabilities of the developed model, the structure- and process-oriented parameters in the present mobility model are calculated explicitly for an n-channel enhancement-mode MOSFET with single-channel boron implantation. Moreover, n-channel MOSFETs with different channel lengths fabricated in a production line by using a set of test keys have been characterized and the measured mobilities have been compared to the model. Excellent agreement has been obtained for all ranges of the fabricated channel lengths, which strongly support the accuracy of the model. (author)

  9. Water Electrolysis at Different Current - Voltage Regimes

    International Nuclear Information System (INIS)

    Kleperis, J.; Blums, J.; Vanags, M.

    2007-01-01

    Full text: Electrochemical impedance and volt-amperic methods were used to compare an efficiency of water electrolysis for different materials and different electrode configurations. Two and three electrode measurements were made, using standard calomel reference electrode. Non-standard capacitative electrolysis was analyzed in special cell made from cylindrical steel electrodes. Volt-amperic measurements from - 15V to +15V DC didn't indicated the presence of oxidation - reduction reactions when distilled water was used as electrolyte. Impedance measurements showed unusual frequency behavior when the AC voltage increased till 0.5V. Different nickel and carbon electrodes (plate, porous and textile - type) were used to learn classical Faraday electrolysis in strong alkali solutions. Flying increase of current was indicator of the presence of electrolysis, and characteristic potential was used differ between materials accordingly they effectiveness for usage in an electrolyser device. (Aithors)

  10. Features of the effect of the parameters of resonance systems with different configurations on the current-voltage characteristics of resonant-tunneling nanostructures in a subterahertz frequency range

    International Nuclear Information System (INIS)

    Aleksanyan, A.A.; Volchkov, N.A.; Dravin, V.A.; Kazakov, I.P.; Karuzskij, A.L.; Murzin, V.N.; Perestoronin, A.V.; Tskhovrebov, A.M.; Shmelev, S.S.

    2014-01-01

    Features of the effect of a subterahertz microwave field on the current characteristics of a resonant-tunneling diode in resonance systems with different configurations have been studied. Changes in the current characteristics of the resonant-tunneling diode under variation of the electrophysical parameters of dielectric and microstrip resonators, in particular high-Q-factor superconducting microstrip resonators, have been experimentally studied and analyzed [ru

  11. Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

    Energy Technology Data Exchange (ETDEWEB)

    Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

    1962-04-15

    In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

  12. Current-voltage model of LED light sources

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Munk-Nielsen, Stig

    2012-01-01

    Amplitude modulation is rarely used for dimming light-emitting diodes in polychromatic luminaires due to big color shifts caused by varying magnitude of LED driving current and nonlinear relationship between intensity of a diode and driving current. Current-voltage empirical model of light...

  13. Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

    Science.gov (United States)

    Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2017-02-16

    The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Current-voltage curves for molecular junctions computed using all-electron basis sets

    International Nuclear Information System (INIS)

    Bauschlicher, Charles W.; Lawson, John W.

    2006-01-01

    We present current-voltage (I-V) curves computed using all-electron basis sets on the conducting molecule. The all-electron results are very similar to previous results obtained using effective core potentials (ECP). A hybrid integration scheme is used that keeps the all-electron calculations cost competitive with respect to the ECP calculations. By neglecting the coupling of states to the contacts below a fixed energy cutoff, the density matrix for the core electrons can be evaluated analytically. The full density matrix is formed by adding this core contribution to the valence part that is evaluated numerically. Expanding the definition of the core in the all-electron calculations significantly reduces the computational effort and, up to biases of about 2 V, the results are very similar to those obtained using more rigorous approaches. The convergence of the I-V curves and transmission coefficients with respect to basis set is discussed. The addition of diffuse functions is critical in approaching basis set completeness

  15. A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

    International Nuclear Information System (INIS)

    Feron, K.; Fell, C. J.; Zhou, X.; Belcher, W. J.; Dastoor, P. C.

    2014-01-01

    We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known to remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects

  16. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  17. Temperature and Magnetic Field Driven Modifications in the I-V Features of Gold-DNA-Gold Structure

    Directory of Open Access Journals (Sweden)

    Nadia Mahmoudi Khatir

    2014-10-01

    Full Text Available The fabrication of Metal-DNA-Metal (MDM structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25–55 °C and magnetic fields (0–1200 mT on the current-voltage (I-V features of Au-DNA-Au (GDG structures with an optimum gap of 10 μm is reported. The I-V characteristics acquired in the presence and absence of magnetic fields demonstrated the semiconducting diode nature of DNA in GDG structures with high temperature sensitivity. The saturation current in the absence of magnetic field was found to increase sharply with the increase of temperature up to 45 °C and decrease rapidly thereafter. This increase was attributed to the temperature-assisted conversion of double bonds into single bond in DNA structures. Furthermore, the potential barrier height and Richardson constant for all the structures increased steadily with the increase of external magnetic field irrespective of temperature variations. Our observation on magnetic field and temperature sensitivity of I-V response in GDG sandwiches may contribute towards the development of DNA-based magnetic sensors.

  18. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

    Science.gov (United States)

    Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

    2015-12-01

    In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

  19. Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

    Science.gov (United States)

    Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

    2018-02-01

    A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

  20. Maximum Power Point tracking algorithm based on I-V characteristic of PV array under uniform and non-uniform conditions

    DEFF Research Database (Denmark)

    Kouchaki, Alireza; Iman-Eini, H.; Asaei, B.

    2012-01-01

    This paper presents a new algorithm based on characteristic equation of solar cells to determine the Maximum Power Point (MPP) of PV modules under partially shaded conditions (PSC). To achieve this goal, an analytic condition is introduced to determine uniform or non-uniform atmospheric condition...

  1. Current-voltage relationship in the auroral particle acceleration region

    Directory of Open Access Journals (Sweden)

    M. Morooka

    2004-11-01

    Full Text Available The current-voltage relationship in the auroral particle acceleration region has been studied statistically by the Akebono (EXOS-D satellite in terms of the charge carriers of the upward field-aligned current. The Akebono satellite often observed field-aligned currents which were significantly larger than the model value predicted by Knight (1973. We compared the upward field-aligned current estimated by three different methods, and found that low-energy electrons often play an important role as additional current carriers, together with the high-energy primary electrons which are expected from Knight's relation. Such additional currents have been observed especially at high and middle altitudes of the particle acceleration region. Some particular features of electron distribution functions, such as "cylindrical distribution functions" and "electron conics", have often been observed coinciding with the additional currents. They indicated time variability of the particle acceleration region. Therefore, we have concluded that the low-energy electrons within the "forbidden" region of electron phase space in the stationary model often contribute to charge carriers of the current because of the rapid time variability of the particle acceleration region. "Cylindrical distribution functions" are expected to be found below the time-varying potential difference. We statistically examined the locations of "cylindrical distribution function", and found that their altitudes are related to the location where the additional currents have been observed. This result is consistent with the idea that the low-energy electrons can also carry significant current when the acceleration region changes in time.

  2. Effects of synchronous irradiance monitoring and correction of current-voltage curves on the outdoor performance measurements of photovoltaic modules

    Science.gov (United States)

    Hishikawa, Yoshihiro; Doi, Takuya; Higa, Michiya; Ohshima, Hironori; Takenouchi, Takakazu; Yamagoe, Kengo

    2017-08-01

    Precise outdoor measurement of the current-voltage (I-V) curves of photovoltaic (PV) modules is desired for many applications such as low-cost onsite performance measurement, monitoring, and diagnosis. Conventional outdoor measurement technologies have a problem in that their precision is low when the solar irradiance is unstable, hence, limiting the opportunity of precise measurement only on clear sunny days. The purpose of this study is to investigate an outdoor measurement procedure, that can improve both the measurement opportunity and precision. Fast I-V curve measurements within 0.2 s and synchronous measurement of irradiance using a PV module irradiance sensor very effectively improved the precision. A small standard deviation (σ) of the module’s maximum output power (P max) in the range of 0.7-0.9% is demonstrated, based on the basis of a 6 month experiment, that mainly includes partly sunny days and cloudy days, during which the solar irradiance is unstable. The σ was further improved to 0.3-0.5% by correcting the curves for the small variation of irradiance. This indicates that the procedure of this study enables much more reproducible I-V curve measurements than a conventional usual procedure under various climatic conditions. Factors that affect measurement results are discussed, to further improve the precision.

  3. On the current-voltage relationship in fluid theory

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    1999-01-01

    Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

  4. On the current-voltage relationship in fluid theory

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    Full Text Available The kinetic theory of precipitating electrons with Maxwellian source plasma yields the well-known current-voltage relationship (CV-relationship; Knight formula, which can in most cases be accurately approximated by a reduced linear formula. Our question is whether it is possible to obtain this CV-relationship from fluid theory, and if so, to what extent it is physically equivalent with the more accurate kinetic counterpart. An answer to this question is necessary before trying to understand how one could combine time-dependent and transient phenomena such as Alfvénic waves with a slowly evolving background described by the CV-relationship. We first compute the fluid quantity profiles (density, pressure etc. along a flux tube based on kinetic theory solution. A parallel potential drop accumulates plasma (and pressure below it, which explains why the current is linearly proportional to the potential drop in the kinetic theory even though the velocity of the accelerated particles is only proportional to the square root of the accelerating voltage. Electron fluid theory reveals that the kinetic theory results can be reproduced, except for different numerical constants, if and only if the polytropic index γ is equal to three, corresponding to one-dimensional motion. The convective derivative term v·∇v provides the equivalent of the "mirror force" and is therefore important to include in a fluid theory trying to describe a CV-relationship. In one-fluid equations the parallel electric field, at least in its functional form, emerges self-consistently. We find that the electron density enhancement below the potential drop disappears because the magnetospheric ions would be unable to neutralize it, and a square root CV-relationship results, in disagreement with kinetic theory and observations. Also, the potential drop concentrates just above the ionosphere, which is at odds with observations as well. To resolve this puzzle, we show that considering

  5. Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

    International Nuclear Information System (INIS)

    Akkal, B.; Benamara, Z.; Bouiadjra, N. Bachir; Tizi, S.; Gruzza, B.

    2006-01-01

    The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V G ), the capacitance-voltage C(V G ) measurements were plotted and analysed. The saturation current I s , the serial resistance R s and the mean ideality factor n are, respectively, equal to 2.03 x 10 -5 A, 85 Ω, 1.7 under dark and to 3.97 x 10 -5 A, 67 Ω, 1.59 under illumination. The analysis of I(V G ) and C(V G ) characteristics allows us to determine the mean interfacial state density N ss and the transmission coefficient θ n equal, respectively, to 4.33 x 10 12 eV -1 cm -2 , 4.08 x 10 -3 under dark and 3.79 x 10 12 eV -1 cm -2 and 5.65 x 10 -3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C -2 (V G ) characteristic

  6. A uniform laminar air plasma plume with large volume excited by an alternating current voltage

    Science.gov (United States)

    Li, Xuechen; Bao, Wenting; Chu, Jingdi; Zhang, Panpan; Jia, Pengying

    2015-12-01

    Using a plasma jet composed of two needle electrodes, a laminar plasma plume with large volume is generated in air through an alternating current voltage excitation. Based on high-speed photography, a train of filaments is observed to propagate periodically away from their birth place along the gas flow. The laminar plume is in fact a temporal superposition of the arched filament train. The filament consists of a negative glow near the real time cathode, a positive column near the real time anode, and a Faraday dark space between them. It has been found that the propagation velocity of the filament increases with increasing the gas flow rate. Furthermore, the filament lifetime tends to follow a normal distribution (Gaussian distribution). The most probable lifetime decreases with increasing the gas flow rate or decreasing the averaged peak voltage. Results also indicate that the real time peak current decreases and the real time peak voltage increases with the propagation of the filament along the gas flow. The voltage-current curve indicates that, in every discharge cycle, the filament evolves from a Townsend discharge to a glow one and then the discharge quenches. Characteristic regions including a negative glow, a Faraday dark space, and a positive column can be discerned from the discharge filament. Furthermore, the plasma parameters such as the electron density, the vibrational temperature and the gas temperature are investigated based on the optical spectrum emitted from the laminar plume.

  7. Chronic hepatitis C in i. v. drug abusers

    Directory of Open Access Journals (Sweden)

    Lukač-Radončić Elvira

    2011-01-01

    Full Text Available In our work we present the clinical, biochemical, serologic and pathohistologic characteristics of chronic HCV infection in i. v. drag abusers treated in the Clinic for infections diseases in Kragujevac, in period of 3 years (2007-2009. year. In 17 i. v. drug abusers were examined, 13 men and 4 women, with chronic hepatitis C. Average age was 26,82 years. Duration of i. v. drug use was different from 1 year to 11 years. All patients were without com- plaints. Regarding functional liver tests level of amino-transferases was elevated: AST --50,37 Ш and ALT - 97,3 7U/1, total bilimbin was normal. On pathohistologic examination in 12 was found minimal chronic hepatitis, in 3 very active chronic hepatitis with pronounced piece meal necrosis and bridging necrosis, one patient was cirrhosis.

  8. Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

  9. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  10. Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

    NARCIS (Netherlands)

    Jia, Y.; Or, S.W.; Chan, H.L.W.; Jiao, J.; Luo, H.; Van der Zwaag, S.

    2009-01-01

    We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to

  11. Characterization of three types of silicon solar cells for SEPS deep space missions. Volume 1: Current-voltage characteristics of OCLI BSF/BSR 10 ohm-cm, and BSR 2 ohm-cm cells as a function of temperature and intensity

    Science.gov (United States)

    Whitaker, A. F.; Little, S. A.; Smith, C. F., Jr.; Wooden, V. A.

    1979-01-01

    Three types of high performance silicon solar cells, BSF/BSR 10 ohm-cm, BSR 10 ohm-cm, and BSR 2 ohm-cm, were evaluated for their low temperature and low intensity performance. Sixteen cells of each type were subjected to ten temperatures and nine intensities. The BSF/BSR 10 ohm-cm cells provided the best performance at 1 solar constant and +25 C with an efficiency of 14.1% while the BSR 2 ohm-cm cells had the highest low temperature and low intensity performance with an efficiency of 22.2% at 0.04 solar constant and -170 C and the most consistent cell-to-cell characteristics.

  12. Thermal domains in inhomogeneous current-carrying superconductors. Current-voltage characteriscs and dynamics of domain formation after current jumps

    International Nuclear Information System (INIS)

    Bezuglyj, A.I.; Shklovskij, V.A.

    1984-01-01

    The static and dynamic behavior of thermal domains in inhomogeneous superconducting films, where the inhomogeneity behaves like a portion of the film with a reduced critical current, have been studied theoretically within the framework of the phenomenological approach, using the heat balance equation and the dependence of the superconductor critical current on temperature. Depending on the size of the inhomogeneity (local or extended) and on the relative values of parameters of the homogeneous and inhomogeneous regions, different types of current-voltage characteristics are obtained. The nonstationary problem of thermal domain formation near the inhomogeneity after a current jump has been solved, and the domain boundary (kink) dynamics at a distance from the inhomogeneity has been analyzed. A combination of the results allows one to describe the whole process of normal phase formation and its spread throughout the superconducting film

  13. Method of controlling illumination device based on current-voltage model

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

  14. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

    Science.gov (United States)

    Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

    2017-03-01

    We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

  15. Current-voltage characteristics of a gas field ion source with a supertip

    International Nuclear Information System (INIS)

    Boerret, R.; Boehringer, K.; Kalbitzer, S.

    1990-01-01

    The field ionisation properties of a supertip, a fine protrusion on top of a regular emitter, have been studied for hydrogen and the lighter rare gases. The parameter set included tip temperature, tip radius, gas temperature and gas pressure. Due to the local field enhancement at the supertip site, angular current intensities of 35 μA sr -1 and values of brightness up to 10 10 A cm -2 sr -1 have been obtained near the optimum temperature of the gas-tip system. At temperatures below this, the gas density reaches values typical for a condensed phase. In geometrical proportion, the regular tip area appears to serve as a gas supply for the supertip current. (author)

  16. Current-Voltage Characteristics of Bi-dithiolbenzene in Parallel Arrangement

    International Nuclear Information System (INIS)

    Boudjella, Aissa

    2011-01-01

    The low voltage conductance of interacting two 1,4-dithiolbenzene (DTB) molecules is investigated. The simulation results show that the electron transport can be controlled either by changing the Fermi level position E f or modifying its inter-molecular spacing d. Molecular assembly system with close interaction between DTB units, affects significantly the conductance. In addition, the position of the Fermi plays an important role in determining the current flow. Moreover, it is important to note that E f affects not only the threshold voltage V th , but also the saturation voltage V sat . When E f approaches the LUMO energy level, V th decreases, while V sat increases. To conclude, the threshold voltage and the saturation voltage depend on the Fermi level position and the inter-molecular spacing.

  17. Study on different influence of pyrimidine and phenyl on current-voltage characteristics of molecular devices

    International Nuclear Information System (INIS)

    Fu Xiaoxiao; Li Zongliang

    2011-01-01

    By using ab initio method and elastic scattering Green's function theory, electronic transport properties of symmetric tetraphenyl and non-symmetric diblock dipyrimidinyldiphenyl molecules are investigated. The numerical results show that, the tetraphenyl molecule has better electronic conductivity than the diblock molecule. The diblock molecule exhibits pronounced rectification behavior. Some molecular orbitals of the tetraphenyl molecule are delocalized into the two gold electrodes simultaneously which results in the better electronic conductivity. However, the non-symmetric structure of diblock molecule leads to the localization of the molecular orbitals, which is a disadvantage to the electronic transport. (authors)

  18. Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I-V Response.

    Science.gov (United States)

    Kou, Liangzhi; Frauenheim, Thomas; Chen, Changfeng

    2014-08-07

    Recent reports on the fabrication of phosphorene, that is, mono- or few-layer black phosphorus, have raised exciting prospects of an outstanding two-dimensional (2D) material that exhibits excellent properties for nanodevice applications. Here, we study by first-principles calculations the adsorption of CO, CO2, NH3, NO, and NO2 gas molecules on a monolayer phosphorene. Our results predict superior sensing performance of phosphorene that rivals or even surpasses that of other 2D materials such as graphene and MoS2. We determine the optimal adsorption positions of these molecules on the phosphorene and identify molecular doping, that is, charge transfer between the molecules and phosphorene, as the driving mechanism for the high adsorption strength. We further calculated the current-voltage (I-V) relation using the nonequilibrium Green's function (NEGF) formalism. The transport features show large (1-2 orders of magnitude) anisotropy along different (armchair or zigzag) directions, which is consistent with the anisotropic electronic band structure of phosphorene. Remarkably, the I-V relation exhibits distinct responses with a marked change of the I-V relation along either the armchair or the zigzag directions depending on the type of molecules. Such selectivity and sensitivity to adsorption makes phosphorene a superior gas sensor that promises wide-ranging applications.

  19. Distribution of barrier heights in Au/porous GaAs Schottky diodes from current-voltage-temperature measurements

    International Nuclear Information System (INIS)

    Harrabi, Z.; Jomni, S.; Beji, L.; Bouazizi, A.

    2010-01-01

    In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (I-V)-T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential Φ b0 -bar of about 0.67 and 0.54 V and standard deviations σ s 2 of about 8.4x10 -3 and 4.2x10 -3 V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2 A cm -2 K -2 ) of p-type GaAs and the mean barrier height Φ b0 -bar is closed to the band gap of GaAs. The obtained values prove that the I-V-T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.

  20. Current-voltage curve of sodium channels and concentration dependence of sodium permeability in frog skin

    DEFF Research Database (Denmark)

    Fuchs, W; Larsen, Erik Hviid; Lindemann, B

    1977-01-01

    1. The inward facing membranes of in vitro frog skin epithelium were depolarized with solutions of high K concentration. The electrical properties of the epithelium are then expected to be governed by the outward facing, Na-selective membrane.2. In this state, the transepithelial voltage (V...... was recorded. This procedure was repeated after blocking the Na channels with amiloride to obtain the current-voltage curve of transmembrane and paracellular shunt pathways. The current-voltage curve of the Na channels was computed by subtracting the shunt current from the total current.4. The instantaneous I...... of the inward facing membranes but reflects the true behaviour of P(Na).6. The steady-state P(Na) at a given (Na)(o) is smaller than the transient P(Na) observed right after a stepwise increase of (Na)(o) to this value. The time constant of P(Na)-relaxation is in the order of seconds.7. In conclusion, Na...

  1. Transport systems of Ventricaria ventricosa: I/V analysis of both membranes in series as a function of [K(+)](o).

    Science.gov (United States)

    Beilby, M J; Bisson, M A

    1999-09-01

    The current-voltage (I/V) profiles of Ventricaria (formerly Valonia) membranes were measured at a range of external potassium concentrations, [K(+)](o), from 0.1 to 100 mm. The conductance-voltage (G/V) characteristics were computed to facilitate better resolution of the profile change with time after exposure to different [K(+)](o). The resistance-voltage (R/V) characteristics were computed to attempt resolution of plasmalemma and tonoplast. Four basic electrophysiological stages emerged: (1) Uniform low resistance between -60 and +60 mV after the cell impalement. (2) High resistance between +50 and +150 for [K(+)](o) from 0.1 to 1.0 mm and hypotonic media. (3) High resistance between -150 and -20 mV for [K(+)](o) of 10 mm (close to natural seawater) and hypertonic media. (4) High resistance between -150 and +170 mV at [K(+)](o) of 100 mm. The changes between these states were slow, requiring minutes to hours and sometimes exhibiting spontaneous oscillations of the membrane p.d. (potential difference). Our analysis of the I/V data supports a previous hypothesis, that Ventricaria tonoplast is the more resistive membrane containing a pump, which transports K(+) into the vacuole to regulate turgor. We associate state (1) with the plasmalemma conductance being dominant and the K(+) pump at the tonoplast short-circuited probably by a K(+) channel, state (2) with the K(+) pump "off" or short-circuited at p.d.s more negative than +50 mV, state (3) with the K(+) pump "on, " and state (4) with the pump dominant, but affected by high K(+). A model for the Ventricaria membrane system is proposed.

  2. Theoretical Current-Voltage Curve in Low-Pressure Cesium Diode for Electron-Rich Emission

    Science.gov (United States)

    Coldstein, C. M.

    1964-01-01

    Although considerable interest has been shown in the space-charge analysis of low-pressure (collisionless case) thermionic diodes, there is a conspicuous lack in the presentation of results in a way that allows direct comparison with experiment. The current-voltage curve of this report was, therefore, computed for a typical case within the realm of experimental interest. The model employed in this computation is shown in Fig. 1 and is defined by the limiting potential distributions [curves (a) and (b)]. Curve (a) represents the potential V as a monotonic function of position with a slope of zero at the anode; curve (b) is similarly monotonic with a slope of zero at the cathode. It is assumed that by a continuous variation of the anode voltage, the potential distributions vary continuously from one limiting form to the other. Although solutions for infinitely spaced electrodes show that spatically oscillatory potential distributions may exist, they have been neglected in this computation.

  3. CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

    Directory of Open Access Journals (Sweden)

    T. Scarazzato

    2015-12-01

    Full Text Available Abstract Membrane separation techniques have been explored for treating industrial effluents to allow water reuse and component recovery. In an electrodialysis system, concentration polarization causes undesirable alterations in the ionic transportation mechanism. The graphic construction of the current voltage curve is proposed for establishing the value of the limiting current density applied to the cell. The aim of this work was to determine the limiting current density in an electrodialysis bench stack, the function of which was the treatment of an electroplating effluent containing HEDP. For this, a system with five compartments was used with a working solution simulating the rinse waters of HEDP-based baths. The results demonstrated correlation between the regions defined by theory and the experimental data.

  4. DFT coupled with NEGF study of ultra-sensitive HCN and HNC gases detection and distinct I-V response based on phosphorene.

    Science.gov (United States)

    Pang, Jiu; Yang, Qun; Ma, Xiaosong; Wang, Liming; Tan, Chunjian; Xiong, Daxi; Ye, Huaiyu; Chen, Xianping

    2017-11-22

    The sensing performances of pristine and X-doped phosphorene substrates (X = Al, Si, and S atoms) toward the adsorption of the toxic gases HCN and HNC were systematically investigated by first-principles simulations. The numerical results show that the pristine phosphorene is sensitive to HCN and HNC molecules with moderate adsorption energy, excellent charge transfer, high sensitivity and selectivity, implying its potential applications as excellent HCN and HNC sensors. In addition, the Al-doped phosphorene exhibits extremely high reactive activity toward HCN and HNC gases; thus, it has potential for use as a metal-free catalyst for activating or catalyzing HCN or HNC adsorbates. Moreover, the transport properties, i.e., current-voltage (I-V) characteristics, were calculated by the non-equilibrium Green's function (NEGF) method within the framework of the density functional theory (DFT). The obtained results reveal that the adsorbed HCN or HNC gas molecules have a remarkable impact on the electronic conductivity of phosphorene, and the zigzag direction of phosphorene is more sensitive to gas molecules than the armchair direction. The combination of the high sensitivity, superior selectivity, and moderate adsorption energy of pristine phosphorene toward HCN or HNC gas molecules adsorption, makes phosphorene an excellent candidate for HCN and HNC sensors.

  5. Corrosion Effects on the I-V Characteristics of Electrically ...

    African Journals Online (AJOL)

    Experimental analysis on the effects of atmospheric Pollution and environmental degradation on the electrical properties of un-protected high tension cables, using copper and Aluminum wires of various diameters as case study, has been advanced. The analysis of the various data obtained in the course of the experiment, ...

  6. Characteristics and Thermal Efficiency of a Non-transferred DC Plasma Spraying Torch Under Low Pressure

    International Nuclear Information System (INIS)

    Bao Shicong; Ye Minyou; Zhang Xiaodong; Guo Wenkang; Xu Ping

    2008-01-01

    Current-voltage (I-V) characteristics of a non-transferred DC arc plasma spray torch operated in argon at vacuum are reported. The arc voltage is of negative characteristics for a current below 200 A, flat for a current between 200 A to 250 A and positive for a current beyond 250 A. The voltage increases slowly with the increase in carrier gas of arc. The rate of change in voltage with currents is about 3∼4 V/100 A at a gas flow rate of about 1∼1.5 V/10 standard liter per minute (slpm). The I-V characteristics of the DC plasma torch are of a shape of hyperbola. Arc power increases with the argon flow rate, and the thermal efficiency of the torch acts in a similar way. The thermal efficiency of the non-transferred DC plasmatron is about 65∼78%. (low temperature plasma)

  7. Current-voltage analysis of the record-efficiency CuGaSe2 solar cell: Application of the current separation method and the interface recombination model

    International Nuclear Information System (INIS)

    Saad, M.; Kasis, A.

    2011-01-01

    Current-voltage (j-V) characteristics of the record-efficiency CuGaSe 2 solar cell measured under several illumination levels are analyzed using a two-diode equation for a more accurate description of cell behavior. The contribution of each diode to the total cell j-V characteristic under illumination was estimated using the current separation method presented recently. This is performed in an effort to identify the distinctive features of this record-efficiency cell which have led to the up-to-date highest open circuit voltage of V o c = 946 mV and fill factor of FF = 66.5% for CuGaSe 2 solar cells. Furthermore, the interface recombination component of the cell current under illumination is quantitatively discussed applying the interface recombination model presented earlier. (author)

  8. A Contribution To The Development And Analysis Of A Combined Current-Voltage Instrument Transformer By Using Modern CAD Methods

    International Nuclear Information System (INIS)

    Chundeva-Blajer, Marija M.

    2004-01-01

    The principle aim and task of the thesis is the analysis and development of 20 kV combined current-voltage instrument transformer (CCVIT) by using modern CAD techniques. CCVIT is a complex electromagnetic system comprising of four windings and two magnetic cores in one insulation housing for simultaneous transformation of high voltages and currents to measurable signal values by standard instruments. The analytical design methods can be applied on simple electromagnetic configurations, which is not the case with the CCVIT. There is mutual electromagnetic influence between the voltage measurement core (VMC) and the current measurement core (CMC). After the analytical CCVIT design had been done, exact determination of its metrological characteristics has been accomplished by using the numerical finite element method implemented in the FEM-3D program package. The FEM-3D calculation is made in 19 cross-sectional layers of the z-axis of the CCVIT three-dimensional domain. By FEM-3D application the three-dimensional CCVIT magnetic field distribution is derived. This is the basis for calculation of the initial metrological characteristics of the CCVIT (VMC is accuracy class 3 and CMC is accuracy class 1). By using the stochastic optimization technique based on genetic algorithm the CCVIT optimal design is achieved. The objective function is the minimum of the metrological parameters (VIM voltage error and CMC current error). There are I I independent input variables during the optimization process by which the optimal project is derived. The optimal project is adapted for realization of a prototype and the optimized project is derived. Full comparative analysis of the metrological and the electromagnetic characteristics of the three projects is accomplished. By application of the program package MATLAB/SIMULINK the CCVIT transient phenomena is analyzed for different regimes in the three design projects. In the Instrument Transformer Factory of EMO A. D.-Ohrid a CCVIT

  9. Comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element

    International Nuclear Information System (INIS)

    Wernsman, Bernard

    1997-01-01

    A comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element (TFE) is made. The single-cell TFE used in this study is the prototype for the 40 kW e space nuclear power system that is similar to the 6 kW e TOPAZ-II. The steady-state I-V measurements influence the emitter temperature due to electron cooling. Therefore, to eliminate the steady-state I-V measurement influence on the TFE and provide a better understanding of the behavior of the thermionic energy converter and TFE characteristics, dynamic I-V measurements are made. The dynamic I-V measurements are made at various input power levels, cesium pressures, collector temperatures, and steady-state current levels. From these measurements, it is shown that the dynamic I-V's do not change the TFE characteristics at a given operating point. Also, the evaluation of the collector work function from the dynamic I-V measurements shows that the collector optimization is not due to a minimum in the collector work function but due to an emission optimization. Since the dynamic I-V measurements do not influence the TFE characteristics, it is believed that these measurements can be done at a system level to understand the influence of TFE placement in the reactor as a function of the core thermal distribution

  10. Gate Control Coefficient Effect on CNFET Characteristic

    International Nuclear Information System (INIS)

    Sanudin, Rahmat; Ma'Radzi, Ahmad Alabqari; Nayan, Nafarizal

    2009-01-01

    The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current-voltage (I-V) characteristic of ballistic CNFET. The simulation study used the MOSFET-like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.

  11. Effects of ageing on the electrical characteristics of Zn/ZnS/n-GaAs/In structure

    Science.gov (United States)

    Güzeldir, B.; Sağlam, M.

    2016-04-01

    Zn/ZnS/n-GaAs/In structure has been fabricated by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current-voltage (I-V) of the structure have been measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days after fabrication of this structure. The characteristics parameters of this structure such as barrier height, ideality factor, series resistance are calculated from the I-V measurements. It has been seen that the changes of characteristic parameters such as barrier height, ideality factor and series resistance of Zn/ZnS/n-GaAs/In structure have lightly changed with increasing ageing time.

  12. Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

    International Nuclear Information System (INIS)

    Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

    2006-01-01

    Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

  13. Wavelengths and energy levels of I V and I VI

    International Nuclear Information System (INIS)

    Kaufman, V.; Sugar, J.; Joshi, Y.N.

    1988-01-01

    The spectra of iodine were photographed in the 139--1500-Aat;O region on various spectrographs. Earlier analyses of I V and I VI were revised and extended. For I V 26 lines were classified, and for I VI 35 lines were classified. Ionization energies have been estimated to be 415 510 atm≅ 300 cm -1 (51.52 atm≅ 0.04 eV) and 599 800 atm≅ 3 000 cm -1 (74.37 atm≅ 0.37 eV) for I V and I VI, respectively

  14. Shunt and series resistance of photovoltaic module evaluated from the I-V curve; I-V tokusei kara hyokashita taiyo denchi no shunt teiko to chokuretsu teiko

    Energy Technology Data Exchange (ETDEWEB)

    Asano, K; Kawamura, H; Yamanaka, S; Kawamura, H; Ono, H [Meijo University, Nagoya (Japan)

    1997-11-25

    With an objective of discussing I-V characteristics when a shadow has appeared on part of a photovoltaic module, evaluations were given as a first stage of the study on saturation current, shunt resistance and series resistance for the solar cell module. As a result of measuring change in amount of power generated in a sunny day with a shadow appearing over the solar cell module, reduction in power generation capability of about 23% was verified. In other words, the I-V characteristics of the solar cell module change largely because of existence of the shadow caused on the module. The I-V characteristics curve may be expressed and calculated as a function of the shunt resistance and series resistance. By curve-fitting measurement data for a case of changing insolation without existence of partial shadow, values of the shunt resistance and series resistance were derived. As a result, it was found that the calculations agree well with measurements. It was made also clear that each parameter shows temperature dependence. 6 refs., 10 figs., 1 tab.

  15. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    International Nuclear Information System (INIS)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

    2010-01-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  16. Film thickness degradation of Au/GaN Schottky contact characteristics

    International Nuclear Information System (INIS)

    Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

    2005-01-01

    Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

  17. I-V Curves from Photovoltaic Modules Deployed in Tucson

    Science.gov (United States)

    Kopp, Emily; Brooks, Adria; Lonij, Vincent; Cronin, Alex

    2011-10-01

    More than 30 Mega Watts of photo-voltaic (PV) modules are connected to the electric power grid in Tucson, AZ. However, predictions of PV system electrical yields are uncertain, in part because PV modules degrade at various rates (observed typically in the range 0% to 3 %/yr). We present I-V curves (PV output current as a function of PV output voltage) as a means to study PV module efficiency, de-ratings, and degradation. A student-made I-V curve tracer for 100-Watt modules will be described. We present I-V curves for several different PV technologies operated at an outdoor test yard, and we compare new modules to modules that have been operated in the field for 10 years.

  18. Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

    International Nuclear Information System (INIS)

    Naseri, N; Amiri, M; Moshfegh, A Z

    2010-01-01

    In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

  19. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    DEFF Research Database (Denmark)

    Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...

  20. Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

    International Nuclear Information System (INIS)

    Torkhov, N. A.

    2010-01-01

    Kelvin probe atomic-force microscopy of the electrostatic surface potential of gold Schottky contacts on n-GaAs showed that there is an extended transition area (halo) (tens of micrometers) around contacts in which the surface potential varies from the n-GaAs free surface potential to the gold contact surface potential. The contact potential and its distribution in the surrounding halo are controlled by the contact structure. The study of spreading currents showed that there is a high-conductance area (periphery) around the contact perimeter due to strong electric fields of the halo, which causes leakage currents. The conductivity of the main contact area is caused by 100- to 200-nm local areas with higher and lower conducting abilities. Mesa formation around contacts causes a decrease in the work function, a decrease in the halo extent and electric field strength, which is accompanied by spreading and decreasing of the peripheral area conductance. This results in disappearance of leakage currents and a decrease in the ideality index. In contrast, protection of the peripheral area by a SiO 2 insulating film 0.5 μm thick increases the work function, which is accompanied by the formation of potential lobes around the contact in two mutually perpendicular crystallographic directions. A stronger penetration of halo electric fields into the contact area results in an increase in the ideality index and disappearance of high-conductance peripheral area and leakage currents. The difference between the electrical properties of the periphery, gold grains, and their boundaries controls the contact switching mechanism when applying forward or reverse biases.

  1. Theoretical investigation on current-voltage characteristics in all-carbon molecular device with different contact geometries

    International Nuclear Information System (INIS)

    Ye Fuqiu; Fan Zhiqiang; He Jun; Peng Jun; Tang Liming

    2012-01-01

    Applying nonequilibrium Green's functions in combination with the first-principles density-functional theory, we investigate electronic transport properties of an all-carbon molecular device consisting of one phenalenyl molecule and two zigzag graphene nanoribbons. The results show that the electronic transport properties are strongly dependent on the contact geometry and device's currents can drop obviously when the connect sites change from second-nearest sites from the central atom of the molecule (S site) to third-nearest sites from the central atom of the molecule (T site). More importantly, the negative differential resistance behavior is only observed on the negative bias region when the molecule connects the graphene nanoribbons through two T sites.

  2. The current-voltage relation of a pore and its asymptotic behavior in a Nernst-Planck model

    Directory of Open Access Journals (Sweden)

    Marius Birlea

    2012-08-01

    Full Text Available A model for current-voltage nonlinearity and asymmetry is a good starting point for explaining the electrical behavior of the nanopores in synthetic or biological membranes. Using a Nernst-Planck model, we found three behaviors for the current density in a membrane's pore as a function of voltage: a quasi-ohmic, slow rising linear current at low voltages, a nonlinear current at intermediate voltages, and a non-ohmic, fast rising linear current at large voltages. The slope of the quasi-ohmic current depends mainly on the height of energy barrier inside the pore, w, through an exponential term, ew. The magnitude of the non-ohmic linear current is controlled by the potential energy gradient at the pore entrance, w/r. The current-voltage relation is asymmetric if the ion's potential energy inside the pore has an asymmetric triangular profile. The model has only two assumed parameters, the energy barrier height, w, and the relative size of the entrance region of the pore, r, which is a useful feature for fitting and interpreting experimental data.

  3. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.; Kirkpatrick, J.; Richardson, G.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified

  4. Plantenkaartjes uitgegeven door het I.V.O.N

    NARCIS (Netherlands)

    NN,

    1959-01-01

    De serie door het I.V.O.N. gepubliceerde verspreidingskaartjes van Nederlandse plantensoorten is wederom verkrijgbaar. De prijzen zijn als volgt: afl. 1, 1935, 21 kaartjes van diverse soorten f. 1.35 afl. 2, 1936, 32 kaartjes van diverse soorten „ 2.00 afl. 3, 1936, 18 kaartjes van Potamogeton „

  5. Spectroscopic, scanning laser OBIC, and I-V/QE characterizations of browned EVA solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F.J. [National Renewable Energy Lab., Golden, CO (United States); Eisgruber, I.L. [Materials Research Group, Inc., Wheat Ridge, CO (United States); Micheels, R.H. [Polestar Technologies, Inc., Needham Hts, MA (United States)

    1996-05-01

    The effects of ethylene-vinyl acetate (EVA) discoloration due to accelerated field or laboratory exposure on the encapsulated silicon (Si) solar cells or EVA/glass laminates were characterized quantitatively by using non-invasive, non-destructive ultraviolet-visible (UV-vis) spectrophotometry, spectrocolorimetry, spectrofluorometry, scanning laser OBIC (optical beam induced current) spectroscopy, and current-voltage (I-V) and quantum efficiency (QE) measurements. The results show that the yellowness index (YI) measured directly over the AR-coated solar cells under the glass superstrate increased from the range of -80 to -90 to the range of -20 to 15 as the EVA changed from clear to brown. The ratio of two fluorescence emission peak areas generally increased from 1.45 to 5.69 as browning increased, but dropped to 4.21 on a darker EVA. For a solar cell with brown EVA in the central region, small-area grating QE measurements and scanning laser OBIC analysis between the brown and clear EVA regions showed that the quantum efficiency loss at 633 nm was 42%-48% of the loss at 488 nm, due to a reduced decrease of transmittance in browned EVA at the longer wavelengths. The portion of the solar cell under the browned EVA showed a decrease of {approximately}36% in efficiency, as compared to the cell efficiency under clear EVA. Transmittance loss at 633 nm was 38% of the loss at 488 nm for a light yellow-brown EVA/glass laminate that showed a small increase of 10 in the yellowness index.

  6. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong, E-mail: xdwang@semi.ac.cn; Ji, An; Yang, Fuhua [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)

    2014-03-15

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  7. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Directory of Open Access Journals (Sweden)

    Yangyang Qi

    2014-02-01

    Full Text Available The electron transport characteristics of silicon nanowires (SiNWs fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  8. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Science.gov (United States)

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong; Ji, An; Yang, Fuhua

    2014-03-01

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  9. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  10. Nitrogen plasma-treated multilayer graphene-based field effect transistor fabrication and electronic characteristics

    Science.gov (United States)

    Su, Wei-Jhih; Chang, Hsuan-Chen; Honda, Shin-ichi; Lin, Pao-Hung; Huang, Ying-Sheng; Lee, Kuei-Yi

    2017-08-01

    Chemical doping with hetero-atoms is an effective method used to change the characteristics of materials. Nitrogen doping technology plays a critical role in regulating the electronic properties of graphene. Nitrogen plasma treatment was used in this work to dope nitrogen atoms to modulate multilayer graphene electrical properties. The measured I-V multilayer graphene-base field-effect transistor characteristics (GFETs) showed a V-shaped transfer curve with the hole and electron region separated from the measured current-voltage (I-V) minimum. GFETs fabricated with multilayer graphene from chemical vapor deposition (CVD) exhibited p-type behavior because of oxygen adsorption. After using different nitrogen plasma treatment times, the minimum in I-V characteristic shifted into the negative gate voltage region with increased nitrogen concentration and the GFET channel became an n-type semiconductor. GFETs could be easily fabricated using this method with potential for various applications. The GFET transfer characteristics could be tuned precisely by adjusting the nitrogen plasma treatment time.

  11. Vortex instability and hysteresis effects in I-V curves of superconducting Y1Ba2Cu3O7-δ

    International Nuclear Information System (INIS)

    Kilic, A.; Kilic, K.; Cetin, O.

    2003-01-01

    We have investigated the effect of the current sweep rate (CSR) on the vortex dynamics in superconducting bulk sample of Y 1 Ba 2 Cu 3 O 7-δ . It has been found that the CSR has several dramatic effects on the vortex motion by giving rise enhancement in dissipation as decreasing the CSR, significant time effects, and instabilities in current-voltage (I-V) curves. The hysteresis loops concerning the I-V curves in both the current-increase and -decrease branches of the forward current region, and also the branches of the reversed current region have been observed together with a gradual diminutive of the hysteresis effects with decreasing the CSR. Due to the field and temperature domain considered, it is also observed that the moving state becomes unstable giving rise some instabilities such as small jumps and steps for both low and moderate current values as a function of CSR. Those anomalies have been discussed in terms of the depinning-pinning correlated to the plastic flow regime together with the disorder in the coupling strength between the superconducting grains, and compared qualitatively to the numerical computer simulations. In addition, for a given field and temperature domain, it has been shown that the CSR together with a relevant current scale is of importance in evolution of the I-V curves and is a useful tool in investigating the details of the vortex dynamics

  12. Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

    International Nuclear Information System (INIS)

    Yun, J; Shim, J-I; Shin, D-S

    2013-01-01

    We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

  13. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  14. Military Curricula for Vocational & Technical Education. Basic Electricity and Electronics Individualized Learning System. CANTRAC A-100-0010. Module Five: Relationships of Current, Voltage, and Resistance. Study Booklet.

    Science.gov (United States)

    Chief of Naval Education and Training Support, Pensacola, FL.

    This individualized learning module on the relationships of current, voltage, and resistance is one in a series of modules for a course in basic electricity and electronics. The course is one of a number of military-developed curriculum packages selected for adaptaticn to vocational instructional and curriculum development in a civilian setting.…

  15. Transport current ac losses and current-voltage curves of multifilamentary Bi-2223/Ag tape with artificial defects

    International Nuclear Information System (INIS)

    Polak, M.; Jansak, L.

    2000-01-01

    We experimentally studied the effects of a single artificial defect and a linear array of artificial defects on I-V curves, critical currents and transport current ac losses of 55 filament untwisted Bi-2223/Ag tapes. The artificial defect was a small hole drilled into the tape. The reduction in the critical current measured on a 1 cm long section due to one hole of diameter 0.9 mm was 33% and that due to a linear array of seven similar holes was 62%. The slopes of the I-V curves, n, measured in this section were 33, 16 and 5.8 in the original sample, in the sample with one defect and the sample with seven defects, respectively. Both I c and the slope reduction were smaller if the distance between the potential taps was increased. The transport current ac losses at 50 Hz and I rms = 10 A in the sample with one defect measured in a 1 cm long section were practically the same as those in the original sample (4.1x10 -4 W m -1 ), but they increased by 83% in the sample with a linear array of seven defects. The measured increase in losses per unit length was the smaller, the larger the distance between the potential taps. A comparison between the measured and calculated losses revealed that a formal application of the Norris equations for loss calculations in samples with local defects leads to an overestimation of the ac losses. A procedure for the calculation of transport current losses in samples with local defects based on the Norris model is proposed and verified. (author)

  16. Electrical Characterization of Gold-DNA-Gold Structures in Presence of an External Magnetic Field by Means of I-V Curve Analysis

    Directory of Open Access Journals (Sweden)

    Wan Haliza Abd Majid

    2012-03-01

    Full Text Available This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

  17. The I-V Measurement System for Solar Cells Based on MCU

    International Nuclear Information System (INIS)

    Chen Fengxiang; Ai Yu; Wang Jiafu; Wang Lisheng

    2011-01-01

    In this paper, an I-V measurement system for solar cells based on Single-chip Microcomputer (MCU) is presented. According to the test principles of solar cells, this measurement system mainly comprises of two parts-data collecting, data processing and displaying. The MCU mainly used as to acquire data, then the collecting results is sent to the computer by serial port. The I-V measurement results of our test system are shown in the human-computer interaction interface based on our hardware circuit. By comparing the test results of our I-V tester and the results of other commercial I-V tester, we found errors for most parameters are less than 5%, which shows our I-V test result is reliable. Because the MCU can be applied in many fields, this I-V measurement system offers a simple prototype for portable I-V tester for solar cells.

  18. The I-V Measurement System for Solar Cells Based on MCU

    Energy Technology Data Exchange (ETDEWEB)

    Chen Fengxiang; Ai Yu; Wang Jiafu; Wang Lisheng, E-mail: phonixchen79@yahoo.com.cn [Department of physics science and technology, Wuhan University of Technology, Wuhan city, Hubei Province, 430070 (China)

    2011-02-01

    In this paper, an I-V measurement system for solar cells based on Single-chip Microcomputer (MCU) is presented. According to the test principles of solar cells, this measurement system mainly comprises of two parts-data collecting, data processing and displaying. The MCU mainly used as to acquire data, then the collecting results is sent to the computer by serial port. The I-V measurement results of our test system are shown in the human-computer interaction interface based on our hardware circuit. By comparing the test results of our I-V tester and the results of other commercial I-V tester, we found errors for most parameters are less than 5%, which shows our I-V test result is reliable. Because the MCU can be applied in many fields, this I-V measurement system offers a simple prototype for portable I-V tester for solar cells.

  19. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified version of the standard drift-diffusion equations is employed in which minority carrier densities are neglected. This is justified by the large disparities in electron affinity and ionisation potential between the two materials. The resulting equations are solved (via both asymptotic and numerical techniques) in conjunction with (i) Ohmic boundary conditions on the contacts and (ii) an internal boundary condition, imposed on the interface between the two materials, that accounts for charge pair generation (resulting from the dissociation of excitons) and charge pair recombination. Current-voltage curves are calculated from the solution to this model as a function of the strength of the solar charge generation. In the physically relevant power generating regime, it is shown that these current-voltage curves are well-approximated by a Shockley equivalent circuit model. Furthermore, since our drift-diffusion model is predictive, it can be used to directly calculate equivalent circuit parameters from the material parameters of the device. © 2013 AIP Publishing LLC.

  20. Temperature dependent electrical characteristics of an organic-inorganic heterojunction obtained from a novel organometal Mn complex

    International Nuclear Information System (INIS)

    Ocak, Y.S.; Ebeoglu, M.A.; Topal, G.; Kilicoglu, T.

    2010-01-01

    This study includes synthesizing a Mn hexaamide (MnHA) organometal compound (C 27 H 21 N 9 O 6 MnCl 2 ).(1/2H 2 O), fabrication of MnHA/n-Si organic-inorganic heterojunction and analysis of conduction mechanism of the device over the room temperature. After synthesizing the molecule, the structure of the compound was determined using spectroscopic methods. The Sn/MnHA/n-Si structure was constructed by forming a thin MnHA layer on n-Si inorganic semiconductor and evaporating Sn metal on organic complex. The structure has shown good rectifying behavior and obeys the thermionic emission theory. The current-voltage (I-V) characteristics of the diode have been measured at temperatures ranging from 300 to 380 K at 10 K intervals to determine the temperature dependent electrical characteristics of the device.

  1. Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

    Science.gov (United States)

    Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

    2018-06-01

    We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

  2. Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

    Science.gov (United States)

    Skromme, B. J.; Luckowski, E.; Moore, K.; Bhatnagar, M.; Weitzel, C. E.; Gehoski, T.; Ganser, D.

    2000-03-01

    Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.

  3. Observation and investigation of a dynamic inflection point in current-voltage curves for roll-to-roll processed polymer photovoltaics

    DEFF Research Database (Denmark)

    Medford, Andrew James; Lilliedal, Mathilde Raad

    2010-01-01

    Inflection point behaviour is often observed in the current-voltage (IV) curve of polymer and organic solar cells. This phenomenon is examined in the context of flexible roll-to-roll (R2R) processed polymer solar cells in a large series of devices with a layer structure of: PET-ITO-ZnO-P3HT...... of this “photo-annealing” behaviour was further investigated by studying the effects of several key factors: temperature, illumination, and atmosphere. The results consistently showed that the inflection point is a dynamic interface phenomenon which can be removed under specific conditions. Subsequently...

  4. Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

    Science.gov (United States)

    Kim, Kihyun; Shin, Ji Won; Lee, Yong Baek; Cho, Mi Yeon; Lee, Suk Ho; Park, Dong Hyuk; Jang, Dong Kyu; Lee, Cheol Jin; Joo, Jinsoo

    2010-07-27

    We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.

  5. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

    2010-11-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  6. Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Jheng, Mei-Jyuan; Zeng, Jian-Jhou

    2010-01-01

    This study investigates the current density-voltage (J-V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol-gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J-V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J-V relationship.

  7. A firefly algorithm approach for determining the parameters characteristics of solar cell

    Directory of Open Access Journals (Sweden)

    Mohamed LOUZAZNI

    2017-12-01

    Full Text Available A metaheuristic algorithm is proposed to describe the characteristics of solar cell. The I-V characteristics of solar cell present double nonlinearity in the presence of exponential and in the five parameters. Since, these parameters are unknown, it is important to predict these parameters for accurate modelling of I-V and P-V curves of solar cell. Moreover, firefly algorithm has attracted the intention to optimize the non-linear and complex systems, based on the flashing patterns and behaviour of firefly’s swarm. Besides, the proposed constrained objective function is derived from the current-voltage curve. Using the experimental current and voltage of commercial RTC France Company mono-crystalline silicon solar cell single diode at 33°C and 1000W/m² to predict the unknown parameters. The statistical errors are calculated to verify the accuracy of the results. The obtained results are compared with experimental data and other reported meta-heuristic optimization algorithms. In the end, the theoretical results confirm the validity and reliability of firefly algorithm in estimation the optimal parameters of the solar cell.

  8. Investigation on I-V for Different Heating Temperatures of Nanocomposited MEH-PPV:CNTs Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    M. S. P. Sarah

    2012-01-01

    Full Text Available This paper discussed the effect of different thermal evaporation treatments for nanocomposited MEH-PPV:CNTs thin films towards the performance of organic solar cells. The configuration of the organic solar cells is ITO/MEH-PPV:CNTs/Au. The heating temperature was varied from, as deposited, 50°C, 75°C, and 100°C. From the results, we observed that the efficiency increase slightly before decreasing back at 100°C. The highest efficiency was solar cells heated at 75°C with efficiency 0.001% which is supported by the I-V characteristics and also by the absorption spectra.

  9. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

    2011-01-01

    Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  10. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiskumara, R. [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States); Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.; Dickens, J. C.; Neuber, A. A. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2015-09-07

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

  11. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

    2011-09-15

    Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  12. Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

    Science.gov (United States)

    van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

    2013-04-01

    To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

  13. Current-voltage characteristics of SnO2-Co3O4-Cr2O3-Sb2O5 ceramics

    International Nuclear Information System (INIS)

    Aguilar-Martinez, J A; Glot, A B; Gaponov, A V; Hernandez, M B; Guerrero-Paz, J

    2009-01-01

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO 2 -Co 3 O 4 -Cr 2 O 3 -Sb 2 O 5 sintered in the range 1150-1450 0 C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 0 C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E 1 (at 10 -3 A cm -2 ) from 3500 to 2800 V cm -1 . The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  14. Charge Transport and Photocurrent Generation Characteristics in Dye Solar Cells Containing Thermally Degraded N719 Dye Molecules

    DEFF Research Database (Denmark)

    Andersen, A. R.; Halme, J.; Lund, T.

    2011-01-01

    product (N719-TBP) on the performance parameters of the cells. Two types of dyed solar cells, based on either N719 or N719-TBP, have been characterized employing standard current-voltage (I-V) performance test, UV-vis optical spectroscopy, incident photon to current efficiency (IPCE), and electrochemical...

  15. Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

    Directory of Open Access Journals (Sweden)

    K. AMEUR

    2014-05-01

    Full Text Available In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100 substrates using a Glow Discharge Source (GDS in ultra high vacuum. The I (V curves have exhibited anomalous two-step (kink forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V and C(V curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG and this was noticed in the presentation of characteristics C(V.

  16. Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

    Science.gov (United States)

    Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

    2018-01-01

    Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

  17. Ozone and dinitrogen monoxide production in atmospheric pressure air dielectric barrier discharge plasma effluent generated by nanosecond pulse superimposed alternating current voltage

    Science.gov (United States)

    Takashima, Keisuke; Kaneko, Toshiro

    2017-06-01

    The effects of nanosecond pulse superposition to alternating current voltage (NS + AC) on the generation of an air dielectric barrier discharge (DBD) plasma and reactive species are experimentally studied, along with measurements of ozone (O3) and dinitrogen monoxide (N2O) in the exhausted gas through the air DBD plasma (air plasma effluent). The charge-voltage cycle measurement indicates that the role of nanosecond pulse superposition is to induce electrical charge transport and excess charge accumulation on the dielectric surface following the nanosecond pulses. The densities of O3 and N2O in NS + AC DBD are found to be significantly increased in the plasma effluent, compared to the sum of those densities generated in NS DBD and AC DBD operated individually. The production of O3 and N2O is modulated significantly by the phase in which the nanosecond pulse is superimposed. The density increase and modulation effects by the nanosecond pulse are found to correspond with the electrical charge transport and the excess electrical charge accumulation induced by the nanosecond pulse. It is suggested that the electrical charge transport by the nanosecond pulse might result in the enhancement of the nanosecond pulse current, which may lead to more efficient molecular dissociation, and the excess electrical charge accumulation induced by the nanosecond pulse increases the discharge coupling power which would enhance molecular dissociation.

  18. The role of bulk and interface states on performance of a-Si: H p-i-n solar cells using reverse current-voltage technique

    International Nuclear Information System (INIS)

    Mahmood, S A; Kabir, M Z; Murthy, R V R; Dutta, V

    2009-01-01

    The defect state densities in the bulk of the i-layer and at the p/i interface have been studied in hydrogenated amorphous silicon (a-Si : H) solar cells using reverse current-voltage (J-V) measurements. In this work the cells have been soaked with blue and red lights prior to measurements. The voltage-dependent reverse current has been analysed on the basis of thermal generation of the carriers from midgap states in the i-layer and the carrier injection through the p/i interface. Based on the reverse current behaviour, it has been analysed that at lower reverse bias (reverse voltage, V r r ∼ 25 V) the defect states at the p/i interface are contributing to the reverse currents. The applied reverse bias annealing (RBA) treatment on these cells shows more significant annihilation of defect states at the p/i interface as compared with the bulk of the i-layer. An analytical model is developed to explain the observed behaviour. There is good agreement between the theory and the experimental observations. The fitted defect state densities are 9.1 x 10 15 cm -3 and 8 x 10 18 cm -3 in the bulk of the i-layer and near the p/i interface, respectively. These values decrease to 2.5 x 10 15 cm -3 and 6 x 10 17 cm -3 , respectively, in the samples annealed under reverse bias at 2 V.

  19. Method for estimation of the output electric power of PV module with considering environmental factors. Method for estimation of output using I-V curves; Kankyo inshi wo koryoshita taiyo denchi module no shutsuryoku keisanho. I-V tokusei curve ni yoru keisan

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Y; Tani, T [Science University of Tokyo, Tokyo (Japan)

    1996-10-27

    Based on the basic quality equation of photovoltaic (PV) cell, a quality equation of PV module has been constructed by considering the spectral distribution of solar radiation and its intensity. A calculation method has been also proposed for determining the output from current-voltage (I-V) curves. Effectiveness of this method was examined by comparing calculated results and observed results. Amorphous Si (a-Si) and polycrystal Si PV modules were examined. By considering the environmental factors, differences of the annual output between the calculated and observed values were reduced from 2.50% to 0.95% for the a-Si PV module, and from 2.52% to 1.24% for the polycrystal Si PV module, which resulted in the reduction more than 50%. For the a-Si PV module, the environmental factor most greatly affecting the annual output was the spectral distribution of solar radiation, which was 3.86 times as large as the cell temperature, and 1.04 times as large as the intensity of solar radiation. For the polycrystal PV module, the environmental factor most greatly affecting the annual output was the cell temperature, which was 7.05 times as large as the spectral distribution of solar radiation, and 1.74 times as large as the intensity of solar radiation. 6 refs., 4 figs., 1 tab.

  20. Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

    Science.gov (United States)

    Sreenu, K.; Venkata Prasad, C.; Rajagopal Reddy, V.

    2017-10-01

    A Ti/Orange G/ p-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p-InP metal/semiconductor (MS) and Ti/OG/ p-InP MIS junctions have been analyzed based on current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I- V characteristic, Cheung's and Norde's methods, and the ΨS- V plot. The BH evaluated by Cheung's and Norde's methods and the ΨS- V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole-Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.

  1. Low-cost, High Flexibility I-V Curve Tracer for Photovoltaic Modules

    DEFF Research Database (Denmark)

    Ibirriaga, Julen Joseba Maestro; Pena, Xabier Miquelez de Mendiluce; Opritescu, Adrian

    2010-01-01

    This work presents the design, construction and test of an in-door low cost, high flexibility I-V curve tracer for photovoltaic modules. The tracer is connected to a Xenon lamp based flashing solar simulator. The designed tracer is able to deal with the very fast changing irradiation conditions...

  2. Bianchi Type-I, V and VIo models in modified generalized scalar ...

    Indian Academy of Sciences (India)

    Keywords. Bianchi type; scalar–tensor theory; cosmological term; scalar field. ... We obtain exact solutions of the field equations in Bianchi Type-I, V and VIo space–times. The evolution of the scale factor ... Pramana – Journal of Physics | News.

  3. Characterisation of oral and i.v. glucose handling in truncally vagotomised subjects with pyloroplasty

    DEFF Research Database (Denmark)

    Plamboeck, Astrid; Veedfald, Simon; Deacon, Carolyn F

    2013-01-01

    =16) and matched controls (n=10) underwent 50 g-oral glucose tolerance test (OGTT)±vildagliptin, a DPP4 inhibitor (DPP4i) and isoglycaemic i.v. glucose infusion (IIGI), copying the OGTT without DPP4i. RESULTS: Isoglycaemia was obtained with 25±2 g glucose in vagotomised subjects and 18±2 g in controls...

  4. Le projet français P.I.V.E.R.T.

    Directory of Open Access Journals (Sweden)

    Rous Jean-François

    2012-11-01

    Full Text Available P.I.V.E.R.T. is an ambitious project of development of the 3rd generation biorefinery by 2020. Conceived around a technological complex with strict environmental criteria (aiming at obtaining a label HQE, P.I.V.E.R.T. federates all the national and main roads lifeblood, of the sector (some international partnerships are also under development. The major objectives of the P.I.V.E.R.T. project are: a valorization of oilseeds, proteins and lignocellulosic plant in its entirety (approach ‘‘entire plants’’ ; an operation in closed circuit on the level of water and energy exchanges, the platform providing for its own needs, in a logic of industrial ecology ; collection and valorization of a significant part of the CO2 produced by the activities of the refinery. Two strategies will be developed jointly: on one hand the development of ‘‘platform’’ molecules entering the traditional circuits of chemistry, on the current markets with the renewable character, in addition, the development of new molecules having new properties, thus giving access to new markets. Thanks to the research and development realized by researchers dedicated to P.I.V.E.R.T., the industrial partners will have access to a capable structure to develop, and to test demonstrators preceding future industrial production units. Certain technological bricks could be tested in a large scale industrial platform dedicated to operational integration of innovations. The development of programming technologies of refineries will give to P.I.V.E.R.T. the means to develop new innovative processes and will give to the industrials the possibility of modeling their future production units.

  5. Poly-benzyl domains grown on porous silicon and their I-V rectification

    International Nuclear Information System (INIS)

    Chao Jie; Han Huanmei; Xia Bing; Ba Long; Liu Hongbo; Xiao Shoujun

    2007-01-01

    Microwave-irradiated polymerization of benzyl chloride and triphenyl chloromethane on hydride-terminated porous silicon (PS) was achieved through the use of Zn powder as a catalyst. Transmission infrared Fourier-transform spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses confirmed the poly-benzyl membranes grafted on PS. Topographical images by AFM revealed crystal-like domains rather than homogenous monolayers on the surface. The current-voltage measurements in nano-scale by current sensing atomic force microscopy (CS-AFM) showed the rectification behavior of this polymer membrane. Finally, mechanism of a radical initiation on the surface and a following Friedel-Crafts alkylation was proposed for the covalent assembly of poly-benzyl domains

  6. Adriamycin continuous i.v. infusion for the treatment of childhood hepatic malignancies, toxicity and efficacy: a pilot study childrens cancer study group

    International Nuclear Information System (INIS)

    Ortega, J.A.; Feusner, J.; Reaman, G.; Woods, W.

    1986-01-01

    In an effort to increase the number of patients with hepatoblastoma and hepatocellular carcinoma receiving the benefits of complete surgical excision, a pilot study was undertaken at a few Childrens Cancer Study Group institutions. For this purpose, repeated courses of adriamycin administered as a continuous I.V. infusion either singly or in combination with c-platinum and radiation therapy treatment was selected. The patient population consisted of a total of eleven children with primary hepatic malignancies: six children had hepatoblastoma; all six were under two years of age at diagnosis. Five patients with hepatocellular carcinoma were entered to the study. Of the eleven patients, four had previously received adriamycin as an I.V. bolus. A table summarizes the patient's characteristics, the adriamycin dose they received and their responses to therapy

  7. Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

    2018-06-01

    The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

  8. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  9. Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au-Sb structure fabricated using SILAR method as a function of temperature

    Energy Technology Data Exchange (ETDEWEB)

    Guezeldir, B. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Saglam, M., E-mail: msaglam@atauni.edu.t [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Ates, A. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey)

    2010-09-10

    The Successive Ionic Layer Adsorption and Reaction (SILAR) method has been used to deposit ZnSe thin film onto Si substrate to obtain the Zn/ZnSe/n-Si/Au-Sb sandwich structure. The X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) methods are used to investigate the structural and morphological properties of films. The XRD and SEM studies reveal that the films are covered well on Si substrate and have good polycrystalline structure and crystalline levels. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of this structure have been investigated as a function of the temperature (80-300 K) with 20 K steps. The ideality factor (n) and zero-bias barrier height ({Phi}{sub b0}) value which obtained from I-V curves were found to be strongly temperature dependent. While {Phi}{sub b0} increases with increasing temperature, n decreases. This behavior of the {Phi}{sub b0} and n can be attributed to barrier inhomogeneities at the metal-semiconductor (M-S) interface. The temperature dependence of the I-V characteristics of the Zn/ZnSe/n-Si/Au-Sb structure can reveal the existence of a double Gaussian distribution. The mean barrier height and the Richardson constant values are obtained as 0.925 eV and 1.140 eV, 130 A/cm{sup 2} K{sup 2} and 127 A/cm{sup 2} K{sup 2}, from the modified Richardson plot, respectively. Furthermore, the barrier height and carrier concentration are calculated from reverse bias C{sup -2}-V measurements at 200 kHz frequency as a function of the temperature.

  10. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  11. High-temperature Schottky diode characteristics of bulk ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Tuezemen, S; Kilic, Bayram; Coskun, C [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240 Erzurum (Turkey)

    2007-05-16

    Current-voltage (I-V) measurements of Ag/n-ZnO have been carried out at temperatures of 200-500 K in order to understand the temperature dependence of the diode characteristics. Forward-bias I-V analysis results in a Schottky barrier height of 0.82 eV and an ideality factor of 1.55 at room temperature. The barrier height of 0.74 eV and Richardson constant of 0.248 A K{sup -2} cm{sup -2} were also calculated from the Richardson plot, which shows nearly linear characteristics in the temperature range 240-440 K. From the nk{sub b}T/q versus k{sub b}T/q graph, where n is ideality factor, k{sub b} the Boltzmann constant, T the temperature and q the electronic charge we deduce that thermionic field emission (TFE) is dominant in the charge transport mechanism. At higher sample temperatures (>440 K), a trap-assisted tunnelling mechanism is proposed due to the existence of a deep donor situated at E{sub c}-0.62 eV with 3.3 x 10{sup -15} cm{sup 2} capture cross section observed by both deep-level transient spectroscopy (DLTS) and lnI{sub 0} versus 1/k{sub b}T plots. The ideality factor almost remains constant in the temperature range 240-400 K, which shows the stability of the Schottky contact in this temperature range.

  12. I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

    Science.gov (United States)

    Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

    2017-06-27

    We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

  13. I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

    OpenAIRE

    Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

    2017-01-01

    We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 ? A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally genera...

  14. USTUR WHOLE BODY CASE 0269: DEMONSTRATING EFFECTIVENESS OF I.V. CA-DTPA FOR PU

    Energy Technology Data Exchange (ETDEWEB)

    James, Anthony C.; Sasser , Lyle B.; Stuit, Dorothy B.; Glover, Samuel E.; Carbaugh, Eugene H.

    2008-01-28

    This whole body donation case (USTUR Registrant) involved a single acute inhalation of an acidic Pu(NO3)4 solution in the form of an aerosol ‘mist.’ Chelation treatment with i.v. Ca-EDTA was initiated on the day of the intake, and continued intermittently over 6 months. After 2½ years with no further treatment, a course of i.v. Ca-DTPA was administered. A total of 400 measurements of 239+240Pu excreted in urine were recorded; starting on the first day (both before and during the initial Ca-EDTA chelation), and continuing for 37 years. This sampling included all intervals of chelation. In addition, 91 measurements of 239+240Pu-in-feces were recorded over this whole period. The Registrant died about 38 years after the intake, at age 79 y, with extensive carcinomatosis secondary to adenocarcinoma of the prostate gland. At autopsy, all major soft tissue organs were harvested for radiochemical analyses of their 238Pu, 239+240Pu and 241Am content. Also, all types of bone (comprising about half the skeleton) were harvested for radiochemical analyses, as well as samples of skin, subcutaneous fat and muscle. This comprehensive dataset has been applied to derive ‘chelation-enhanced’ transfer rates in the ICRP Publication 67 plutonium biokinetic model, representing the behaviour of blood-borne and tissue-incorporated plutonium during intervals of therapy. The resulting model of the separate effects of i.v. Ca-EDTA and Ca-DTPA chelation shows that the therapy administered in this case succeeded in reducing substantially the long-term burden of plutonium in all body organs, except for the lungs. The calculated reductions in organ content at the time of death are approximately 40% for the liver, 60% for other soft tissues (muscle, skin, glands, etc.), 50% for the kidneys, and 50% for the skeleton. Essentially all of the substantial reduction in skeletal burden occurred in trabecular bone. This modeling exercise demonstrated that 3-y-delayed Ca-DTPA therapy was as

  15. Ustur whole body case 0269: demonstrating effectiveness of i.v. CA-DTPA for Pu

    Energy Technology Data Exchange (ETDEWEB)

    James, A.C.; Sasser, L.B.; Stuit, D.B. [US Transuranium and Uranium Registries, College of Pharmacy, Washington State University, 1845 Terminal Drive, Suite 201, Richland, WA 99354 (United States); Glover, S.E. [Department of Mechanical, Industrial and Nuclear Engineering, University of Cincinnati, 598 Rhodes Hall, Cincinnati, OH 45221 (United States); Carbaugh, E.H. [Pacific Northwest National Laboratory, PO Box 999, Richland, WA 99354 (United States)

    2007-07-01

    This whole body donation case (USTUR Registrant) involved a single acute inhalation of an acidic Pu(NO{sub 3}){sub 4} solution in the form of an aerosol 'mist'. Chelation treatment with intravenously (i.v.) Ca-EDTA was initiated on the day of the intake, and continued intermittently over 6 months. After 2.5 y with no further treatment, a course of i.v. Ca-DTPA was administered. A total of 400 measurements of {sup 239+240}Pu excreted in urine were recorded; starting on the first day (both before and during the initial Ca-EDTA chelation) and continuing for 37 y. This sampling included all intervals of chelation. In addition, 91 measurements of {sup 239+240}Pu-in-feces were recorded over this whole period. The Registrant died about 38 y after the intake, at age 79 y, with extensive carcinomatosis secondary to adenocarcinoma of the prostate gland. At autopsy, all major soft tissue organs were harvested for radiochemical analyses of their {sup 238}Pu, {sup 239+240}Pu and {sup 241}Am content. Also, all types of bone (comprising about half the skeleton) were harvested for radiochemical analyses, as well as samples of skin, subcutaneous fat and muscle. This comprehensive data set has been applied to derive 'chelation-enhanced' transfer rates in the ICRP Publication 67 plutonium biokinetic model, representing the behaviour of blood-borne and tissue-incorporated plutonium during intervals of therapy. The resulting model of the separate effects of i.v. Ca-EDTA and Ca-DTPA chelation shows that the therapy administered in this case succeeded in reducing substantially the long-term burden of plutonium in all body organs, except for the lungs. The calculated reductions in organ content at the time of death are {approx}40% for the liver, 60% for other soft tissues (muscle, skin, glands, etc.), 50% for the kidneys and 50% for the skeleton. Essentially, all of the substantial reduction in skeletal burden occurred in trabecular bone. This modelling exercise

  16. Characteristics of a corona discharge with a hot corona electrode

    International Nuclear Information System (INIS)

    Kulumbaev, E. B.; Lelevkin, V. M.; Niyazaliev, I. A.; Tokarev, A. V.

    2011-01-01

    The effect of the temperature of the corona electrode on the electrical characteristics of a corona discharge was studied experimentally. A modified Townsend formula for the current-voltage characteristic of a one-dimensional corona is proposed. Gasdynamic and thermal characteristics of a positive corona discharge in a coaxial electrode system are calculated. The calculated results are compared with the experimental data.

  17. Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

    International Nuclear Information System (INIS)

    Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

    1996-03-01

    Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

  18. Effect of i.v. dextrose administration on glucose metabolism during surgery.

    Science.gov (United States)

    Schricker, Thomas; Lattermann, Ralph; Wykes, Linda; Carli, Franco

    2004-01-01

    The inhibitory influence of exogenous dextrose on glucose production has been shown to be less pronounced during injury and sepsis. This protocol was designed to investigate the effect of i.v. hypocaloric dextrose on glucose metabolism during elective abdominal surgery. Fourteen patients with rectal cancer were studied under fasting conditions and toward the end of a 3-hour infusion of dextrose (2 mg.kg-1 per minute) either in absence (control group, n = 7) or presence of colonic surgery (surgery group, n = 7). Endogenous glucose production was determined by using primed continuous infusions of [6,6-2H2]glucose before and during dextrose administration. We also measured the plasma concentrations of glucose, lactate, cortisol, glucagon, and insulin. The administration of dextrose decreased the endogenous glucose production in all patients (p dextrose infusion in both groups (p Dextrose infusion increased the plasma insulin concentrations to the same extent in both groups (p dextrose on endogenous glucose production.

  19. I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

    International Nuclear Information System (INIS)

    Kalisky, B.; Wolfus, Y.; Yeshurun, Y.; Koren, G.; Huebener, R.P.

    2004-01-01

    We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R 0 , in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness

  20. Anomalous I-V curve for mono-atomic carbon chains

    International Nuclear Information System (INIS)

    Song Bo; Fang Haiping; Sanvito, Stefano

    2010-01-01

    The electronic transport properties of mono-atomic carbon chains were studied theoretically using a combination of density functional theory and the non-equilibrium Green's functions method. The I-V curves for the chains composed of an even number of atoms and attached to gold electrodes through sulfur exhibit two plateaus where the current becomes bias independent. In contrast, when the number of carbon atoms in the chain is odd, the electric current simply increases monotonically with bias. This peculiar behavior is attributed to dimerization of the chains, directly resulting from their one-dimensional nature. The finding is expected to be helpful in designing molecular devices, such as carbon-chain-based transistors and sensors, for nanoscale and biological applications.

  1. Rapid contrast infusion of bolus injection for i.v. urography

    International Nuclear Information System (INIS)

    Kaltenborn, H.; Klose, P.; Klose, K.; Schmiedel, E.

    1993-01-01

    The rate of contrast injection during i.v. urography may vary considerably (bolus injection or drip infusion). The effect of 5 rates of injection (6, 12, 18, 36 and 72 ml/min) on the contrast density in the renal collecting system was examined over a period of 30 minutes. Measurements showed an inter-individual difference of more than 200% in each group. The intra-individual variations for different rates of injection were very slight; individual concentration in the kidney for a given dose depends only slightly on the rate of injection. There is no statistically significant improvement in contrast values as a result of a bolus injection. The reduced incidence of side effects justifies the use of bolus injections but pressure injections are unnecessary from a diagnostic point view. (orig.) [de

  2. Peripheral i.v. analysis (PIVA) of venous waveforms for volume assessment in patients undergoing haemodialysis.

    Science.gov (United States)

    Hocking, K M; Alvis, B D; Baudenbacher, F; Boyer, R; Brophy, C M; Beer, I; Eagle, S

    2017-12-01

    The assessment of intravascular volume status remains a challenge for clinicians. Peripheral i.v. analysis (PIVA) is a method for analysing the peripheral venous waveform that has been used to monitor volume status. We present a proof-of-concept study for evaluating the efficacy of PIVA in detecting changes in fluid volume. We enrolled 37 hospitalized patients undergoing haemodialysis (HD) as a controlled model for intravascular volume loss. Respiratory rate (F0) and pulse rate (F1) frequencies were measured. PIVA signal was obtained by fast Fourier analysis of the venous waveform followed by weighing the magnitude of the amplitude of the pulse rate frequency. PIVA was compared with peripheral venous pressure and standard monitoring of vital signs. Regression analysis showed a linear correlation between volume loss and change in the PIVA signal (R2=0.77). Receiver operator curves demonstrated that the PIVA signal showed an area under the curve of 0.89 for detection of 20 ml kg-1 change in volume. There was no correlation between volume loss and peripheral venous pressure, blood pressure or pulse rate. PIVA-derived pulse rate and respiratory rate were consistent with similar numbers derived from the bio-impedance and electrical signals from the electrocardiogram. PIVA is a minimally invasive, novel modality for detecting changes in fluid volume status, respiratory rate and pulse rate in spontaneously breathing patients with peripheral i.v. cannulas. © The Author 2017. Published by Oxford University Press on behalf of the British Journal of Anaesthesia. All rights reserved. For Permissions, please email: journals.permissions@oup.com

  3. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  4. Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

    Science.gov (United States)

    Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

    2018-03-01

    Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

  5. Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

    International Nuclear Information System (INIS)

    Saglam, M.; Ates, A.; Guezeldir, B.; Astam, A.; Yildirim, M.A.

    2009-01-01

    In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N 2 atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, Φ b and mean R s of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kΩ respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kΩ. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

  6. Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3

    Science.gov (United States)

    Yuan, Chao; Guan, Min; Zhang, Yang; Li, Yiyang; Liu, Shuangjie; Zeng, Yiping

    2017-08-01

    In this work, the organic light-emitting diodes (OLEDs) based on Alq3 are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage-luminescence (I-V-L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200 K and it is mainly affected by the electron transport layer (Alq3). The MoO3 injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200 K. Once the temperature is greater than 250 K, the delay time is mainly affected by the MoO3 injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The Vf is the average growth rate of fall time when the temperature increases 1 K which represents the accumulation rate of carriers. The difference between Vf caused by the MoO3 injection layer is 0.52 us/K and caused by the electroluminescent material Ir(ppy)3 is 0.73 us/K.

  7. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  8. Fabrication of hydrogel-coated single conical nanochannels exhibiting controllable ion rectification characteristics.

    Science.gov (United States)

    Wang, Linlin; Zhang, Huacheng; Yang, Zhe; Zhou, Jianjun; Wen, Liping; Li, Lin; Jiang, Lei

    2015-03-07

    Heterogeneous nanochannel materials that endow new functionalities different to the intrinsic properties of two original nanoporous materials have wide potential applications in nanofluidics, energy conversion, and biosensors. Herein, we report novel, interesting hydrogel-composited nanochannel devices with regulatable ion rectification characteristics. The heterogeneous nanochannel devices were constructed by selectively coating the tip side, base side, or both sides of a single conical nanochannel membrane with thin agar hydrogel layers. The tunable ion current rectification of the nanochannels in the three different coating states was systematically demonstrated by current-voltage (I-V) curves. The asymmetric ionic transport property of the conical nanochannel was further strengthened in the tip-coating state and weakened in the base-coating state, whereas the conical nanochannel showed nearly symmetric ionic transport in the dual-coating state. Repeated experiments presented insight into the good stability and reversibility of the three coating states of the hydrogel-nanochannel-integrated systems. This work, as an example, may provide a new strategy to further design and develop multifunctional gel-nanochannel heterogeneous smart porous nanomaterials.

  9. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Science.gov (United States)

    He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

    2017-02-01

    The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

  10. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  11. Hepatic and muscle clearance of physostigmine in the rat after i.v. administration

    International Nuclear Information System (INIS)

    Somani, S.M.; Unni, L.K.

    1986-01-01

    This study presents a method to calculate the extraction ratio (ER) from in vivo time course of liver metabolism using the physiological and pharmacokinetic parameters such as plasma flow rate, partition coefficient of drug between tissue and plasma and the elimination rate constant from tissues. Rats were administered 3 H-physostigmine (Phy), 100 μg/kg i.v.; and were sacrificed at various times. Tissues were removed and Phy and its metabolites were determined by HPLC. Half-life of Phy in liver and muscle was 24 and 20 min, respectively. ER of Phy in liver was .71 which showed a slight decrease at 10 min. Muscle ER was found to be .347 up to 5 min. Hepatic clearance was calculated to be 23.08 ml/min/kg (34.9% of systemic clearance) and the intrinsic clearance was 83.73 ml/min/kg which indicates that the changes in blood flow to the liver can cause a variation in the systematic clearance. Percentage dose of Phy retained in muscle was maximum and the clearance was 5.2 ml/min/kg suggesting that muscle might be acting as a storage depot for Phy prolonging the pharmacological effects. About 30-40% of radioactivity in the liver could not be washed off by 10% TCA or organic solvents indicating the irreversible binding of drug or metabolite to liver macromolecule

  12. The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

    Science.gov (United States)

    Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

    2018-05-01

    The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

  13. Analysis of output characteristics of PV modules under natural sunlight; Shizen taiyokoka ni okeru taiyo denchi module shutsuryoku tokusei no kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Murai, Y.; Igari, S. [Japan Quality Assurance of Organization, Tokyo (Japan)

    1997-11-25

    The paper measured current/voltage characteristics of various PV modules under natural light and analyzed various characteristics such as generated output and module power generation efficiency. In the experiment, installing various PV modules at the solar techno center located at north latitude 34.7deg and east longitude 137.6deg, measurement was made by I-V curve tracer, pyranometer, and thermocouple buried on the module back. As a result, the following were confirmed: As to the monthly mean power generation efficiency, the crystalline system is lowest in summer and highest in winter, and the amorphous system highest in summer and lowest in winter. Concerning the power generation efficiency and illuminance, the gap of power generation efficiency between at high illuminance and at low illuminance is large in the crystalline system and small in amorphous system. Relating to the azimuth angle of module installation and the generated output, the installation inclined 15deg angle west in summer and 15deg angle east in fall/winter generates more power in the crystalline system. On the contrary, the installation on the south face generates more power in the amorphous system. 4 refs., 8 figs., 3 tabs.

  14. Influence of He-ion irradiation on the characteristics of Pd/n-Si{sub 0.90}Ge{sub 0.10}/Si Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mamor, M; Sellai, A; Bouziane, K; Harthi, S H Al; Busaidi, M Al; Gard, F S [Physics Department, Sultan Qaboos University, PO Box 36 Muscat 123, Sultanate of (Oman)

    2007-03-07

    Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si{sub 09}Ge{sub 0.10} Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height ({phi}{sub bn}) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in {phi}{sub bn} and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T{sub 0} and temperature as well as between {phi}{sub bn} and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si{sub 0.90}Ge{sub 0.10} surface support this interpretation.

  15. Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon

    Directory of Open Access Journals (Sweden)

    Amare Benor

    2017-01-01

    Full Text Available The rate of oxide formation during growth of pores structures on silicon was investigated by in situ I-V measurements. The measurements were designed to get two I-V curves in a short time (total time for the two measurements was 300 seconds taking into account the gap (in mA/cm2 for each corresponding voltage. The in situ I-V measurements were made at different pore depth/time, at the electrolyte-pore tip interface, while etching takes place based on p-type Si. The results showed increasing, decreasing, and constant I-V gap in time, for macropores, nanopores, and electropolishing regimes, respectively. This was related to the expected diffusion limitation of oxide forming (H2O molecules reaching the electrolyte-pore tip and the anodizing current, while etching takes place. The method can be developed further and has the potential to be applied in other electrochemically etched porous semiconductor materials.

  16. Study of the Emission Characteristics of Single-Walled CNT and Carbon Nano-Fiber Pyrograf III

    Science.gov (United States)

    Mousa, Marwan S.; Al-Akhras, M.-Ali H.; Daradkeh, Samer

    2018-02-01

    Field emission microscopy measurements from Single-Walled Carbon Nanotubes (SWCNTs) and Carbon Nano-Fibers Pyrograf III PR-1 (CNF) were performed. Details of the materials employed in the experiments are as follows: (a) Carbon Nano-Fibers Pyrograf III PR-1 (CNF), having an average fiber diameter that is ranging between (100-200) nm with a length of (30-100) μm. (b) Single walled Carbon Nanotubes were produced by high-pressure CO over Fe particle (HiPCO: High-Pressure Carbon Monoxide process), having an average diameter ranging between (1-4) nm with a length of (1-3) μm. The experiments were performed under vacuum pressure value of (10-7 mbar). The research work reported here includes the field electron emission current-voltage (I-V) characteristics and presented as Fowler-Nordheim (FN) plots and the spatial emission current distributions (electron emission images) obtained and analyzed in terms of electron source features. For both the SWCNT and the CNF a single spot pattern for the electron spatial; distributions were observed.

  17. Low-Temperature Electrical Characteristics of Si-Based Device with New Tetrakis NiPc-SNS Active Layer

    Science.gov (United States)

    Yavuz, Arzu Büyükyağci; Carbas, Buket Bezgın; Sönmezoğlu, Savaş; Soylu, Murat

    2016-01-01

    A new tetrakis 4-(2,5-di-2-thiophen-2-yl-pyrrol-1-yl)-substituted nickel phthalocyanine (NiPc-SNS) has been synthesized. This synthesized NiPc-SNS thin film was deposited on p-type Si substrate using the spin coating method (SCM) to fabricate a NiPc-SNS/ p-Si heterojunction diode. The temperature-dependent electrical characteristics of the NiPc-SNS/ p-Si heterojunction with good rectifying behavior were investigated by current-voltage ( I- V) measurements between 50 K and 300 K. The results indicate that the ideality factor decreases while the barrier height increases with increasing temperature. The barrier inhomogeneity across the NiPc-SNS/ p-Si heterojunction reveals a Gaussian distribution at low temperatures. These results provide further evidence of the more complicated mechanisms occurring in this heterojunction. Based on these findings, NiPc-SNS/ p-Si junction diodes are feasible for use in low-temperature applications.

  18. Preparation of i.v. 99mTc radiopharmaceuticals from spent moly 99Mo

    International Nuclear Information System (INIS)

    Noronha, O.P.D.

    1998-01-01

    Full text: Expiry dating is an important quality assurance precept in (radio) pharmacy. There are occasions when for the sake of patient service one may be forced to continue using an over aged source of 99 Mo to generate 99m Tc beyond 7d, especially when there is short/no supply of 99 Mo, (In the early days the expiry date was 3 d or 3 extractions, whichever one was earlier). With the passage of time a few physico-chemical changes (apart from decay) do occur in the 99 Mo/ 99m Tc milieu. The cocktail also begins to contain traces of carried over MEK which is subjected to strong β-, γ irradiation. These impurity (in trace amounts) is soluble in MEK and even, to an extent, in aqueous media. Furthermore, the concentrated impurity tends to seemingly increase in the bulk 99m TcO 4 - since one is compelled to leach TcO 4 - in lower volume of saline. On many occasions we have been constrained to extend the use of 99 Mo beyond 7 - 14 d. Adequate activities were obtained by pooling the previous week's lot of 99 Mo with the current over aged lot. On a few occasions over the past 26 years we have used 99 Mo much beyond 14 d and 2 - 3 occasions for 26 - 28 d (i.e. >10 t 1 /2 of 99 Mo). On each of these occasions the purity of 99m TcO- 4 was ascertained by pharmacopoeial procedures. It was found that despite depleting activities, the purity was not compromised and the trace impurities, even if present, did not cause any interference. We have profitably utilised the bulk TcO- 4 to formulate a variety of i.v. dosage forms of 99m Tc radiodiagnostics. The following strategy was adopted for the patient services - the agents requiring larger activity levels/patients dose were made available in the earlier period, the other during the latter half. It is concluded that pure 99m TcO- 4 can be obtained over the entire useful life-period of 99 Mo, even > 10t l/2

  19. The pharmacokinetics and safety of twice daily i.v. BU during conditioning in pediatric allo-SCT recipients.

    Science.gov (United States)

    Le Gall, J B; Milone, M C; Waxman, I M; Shaw, L M; Harrison, L; Duffy, D; van de Ven, C; Militano, O; Geyer, M B; Morris, E; Bhatia, M; Satwani, P; George, D; Garvin, J H; Bradley, M B; Schwartz, J; Baxter-Lowe, L A; Cairo, M S

    2013-01-01

    Intravenous BU divided four times daily (q6 h) has been shown to be safe and effective in pediatric allo-SCT recipients. Though less frequent dosing is desirable, pharmacokinetic (PK) data on twice daily (q12 h) i.v. BU administration in pediatric allo-SCT recipients is limited. We prospectively examined the PK results in a cohort of pediatric allo-SCT recipients receiving i.v. BU q12 h as part of conditioning before allo-SCT. BU levels were obtained after the first dose of conditioning. PK parameter analysis (n=49) yielded the following 95% confidence intervals (CI₉₅): weight-normalized volume of distribution: 0.65-0.73 L/kg; t(1/2): 122-147 min; weight-normalized clearance (CL(n)): 3.4-4.3 mL/min/kg; and area under the curve: 1835-2180 mmol × min/L. From these results, a steady state concentration was calculated with CI₉₅ between 628-746 ng/mL. Comparison between recipients ≤4 vs >4 years old revealed significant differences in t(1/2) (mean: 115 vs 146 min, P=0.008) and CL(n) (mean: 4.4 vs 3.5 mL/min/kg, P=0.038). Intravenous BU q12 h had a comparable PK to i.v. BU q6 h PK seen in the literature, and in pediatric allo-SCT recipients, is a feasible, attractive alternative to i.v. q6h dosing.

  20. Current-voltage characteristics of SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Martinez, J A [Centro de Investigacion en Materiales Avanzados, S.C. (CIMAV), Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica (PIIT), Nueva Carretera Aeropuerto km. 10, Apodaca, Nuevo Leon, CP 66600 (Mexico); Glot, A B [Posgrado, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Gaponov, A V [Department of Radioelectronics, Dniepropetrovsk National University, Dniepropetrovsk 49050 (Ukraine); Hernandez, M B [Instituto de Mineria, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Guerrero-Paz, J, E-mail: josue.aguilar@cimav.edu.m [Particulate Materials Lab, Universidad Autonoma del Estado de Hidalgo, Pachuca, CP 42184 (Mexico)

    2009-10-21

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} sintered in the range 1150-1450 {sup 0}C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 {sup 0}C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E{sub 1} (at 10{sup -3} A cm{sup -2}) from 3500 to 2800 V cm{sup -1}. The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  1. Practice patterns for the use of iodinated i.v. contrast media for pediatric CT studies: a survey of the Society for Pediatric Radiology.

    Science.gov (United States)

    Callahan, Michael J; Servaes, Sabah; Lee, Edward Y; Towbin, Alexander J; Westra, Sjirk J; Frush, Donald P

    2014-04-01

    There are limited data available on the use of i.v. contrast media for CT studies in the pediatric population. The purpose of this study is to determine the practice patterns of i.v. contrast media usage for pediatric CT by members of the Society for Pediatric Radiology (SPR). SPR members were surveyed regarding the use of i.v. contrast media for pediatric CT studies. Questions pertained to information required before administering i.v. contrast media, types of central catheters for injecting i.v. contrast media, injection rates based on angiocatheter size and study type, and management of i.v. contrast media extravasation. The response rate of 6% (88/1545) represented practice patterns of 26% (401/1545) of the SPR membership. Most respondents thought the following clinical information was mandatory before i.v. contrast media administration: allergy to i.v. contrast media (97%), renal insufficiency (97%), current metformin use (72%), significant allergies (61%), diabetes (54%), and asthma (52%). Most administered i.v. contrast media through nonimplanted central venous catheters (78%), implanted venous ports (78%), and peripherally inserted central catheters (72%). The most common maximum i.v. contrast media injection rates were 5.0 mL/s or greater for a 16-gauge angiocatheter, 4.0 mL/s for an 18-gauge angiocatheter, 3.0 mL/s for a 20-gauge angiocatheter, and 2.0 mL/s for a 22-gauge angiocatheter. For soft-tissue extravasation of i.v. contrast media, 95% elevate the affected extremity, 76% use ice, and 45% use heat. The results of this survey illustrate the collective opinion of a subset of SPR members relating to the use of i.v. contrast media in pediatric CT, providing guidelines for clinical histories needed before i.v. contrast media, maximum i.v. contrast injection rates for standard angiocatheters, contrast media injection rates for specific CT studies, and management of i.v. contrast media soft-tissue extravasation.

  2. Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

    Science.gov (United States)

    Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

    2013-04-01

    A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

  3. A FAST study of quasi-static structure ("Inverted-V") potential drops and their latitudinal dependence in the premidnight sector and ramifications for the current-voltage relationship

    Science.gov (United States)

    Dombeck, J.; Cattell, C.; McFadden, J.

    2013-09-01

    Utilizing FAST satellite electron measurements, we present the first reported investigation of the dependency on latitude of quasi-static structure ("inverted-V") potential drop magnitude (Φ). A trend of lower Φ at lower latitudes in the premidnight sector on field lines with dark foot points was observed. This trend is supported both statistically and in individual satellite crossings. The existence of two distinct peaks in occurrence probability for Φ was also observed: one between ~2 kV and 10 kV and the other at somewhat less than 1 kV. The relative occurrence of structures with Φ in the higher (>2 kV) peak is significantly reduced with decreasing latitude. This partially accounts for the statistical trend of lower potential drop magnitudes at lower latitudes. The two Φ occurrence frequency peaks correspond to two different regimes (one with eΦ/kTe ~ or > 1 and one with eΦ/kTe current-voltage relation where source electron density rather than Φ is most directly controlled by the field-aligned current density. These observations and their ramifications represent a significant step forward in the understanding of field-aligned currents, auroral acceleration, and magnetospheric-ionospheric coupling.

  4. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  5. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  6. I.V.P. Reisid ja VS Angiras nüüd ühe mütsi all / Irina Kiviselg

    Index Scriptorium Estoniae

    Kiviselg, Irina, 1961-

    2004-01-01

    Ilmunud ka: Severnoje Poberezhje, 14. apr. 2004, lk. 4. Ida-Virumaa bussiettevõte I.V.P. Reisid vahetas omanikku, muutudes ettevõtte Kris Kütus üheks osaks. VS Angirase ja I.V.P. Reiside omanik on Boriss Dantshenko

  7. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2015-01-01

    Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...

  8. Characterization and Modeling I(V of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

    Directory of Open Access Journals (Sweden)

    N. Benyahya

    2014-05-01

    Full Text Available In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3, barrier height (0.72 eV and series resistance (33 W were evaluated from I(V data, the threshold voltage (-2.42 V, the 2D gas density (1.35 ´ 1013 cm-2 and barrier height (0.94 eV were evaluated from C(V data.

  9. A physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor.

    Science.gov (United States)

    Rahman, Ehsanur; Shadman, Abir; Ahmed, Imtiaz; Khan, Saeed Uz Zaman; Khosru, Quazi D M

    2018-06-08

    In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle density functional theory simulation has been considered to keep the model physically accurate for monolayer TMDC channel FET. The outcome of the model has been benchmarked against both experimental and numerical quantum simulation results with the help of a few fitting parameters. Using the compact model, detailed output and transfer characteristics of monolayer WSe 2 FET have been studied, and various performance parameters have been determined. The study confirms excellent ON and OFF state performances of monolayer WSe 2 FET which could be viable for the next generation high-speed, low power applications. Also, the proposed model has been extended to study the operation of a biosensor. A monolayer MoS 2 channel based dielectric modulated FET is investigated using the compact model for detection of a biomolecule in a dry environment.

  10. Artemisia annua dried leaf tablets treated malaria resistant to ACT and i.v. artesunate: Case reports.

    Science.gov (United States)

    Daddy, Nsengiyumva Bati; Kalisya, Luc Malemo; Bagire, Pascal Gisenya; Watt, Robert L; Towler, Melissa J; Weathers, Pamela J

    2017-08-15

    Dried leaf Artemisia annua (DLA) has shown efficacy against Plasmodium sp. in rodent studies and in small clinical trials. Rodent malaria also showed resiliency against the evolution of artemisinin drug resistance. This is a case report of a last resort treatment of patients with severe malaria who were responding neither to artemisinin combination therapy (ACT) nor i.v. artesunate. Of many patients treated with ACTs and i.v. artesunate during the 6 mon study period, 18 did not respond and were subsequently treated with DLA Artemisia annua. Patients were given a dose of 0.5g DLA per os, twice daily for 5d. Total adult delivered dose of artemisinin was 55mg. Dose was reduced for body weight under 30kg. Clinical symptoms, e.g. fever, coma etc., and parasite levels in thick blood smears were tracked. Patients were declared cured and released from hospital when parasites were microscopically undetectable and clinical symptoms fully subsided. All patients were previously treated with Coartem® provided through Santé Rurale (SANRU) and following the regimen prescribed by WHO. Of 18 ACT-resistant severe malaria cases compassionately treated with DLA, all fully recovered. Of the 18, this report details two pediatric cases. Successful treatment of all 18 ACT-resistant cases suggests that DLA should be rapidly incorporated into the antimalarial regimen for Africa and possibly wherever else ACT resistance has emerged. Copyright © 2017. Published by Elsevier GmbH.

  11. Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction

    Science.gov (United States)

    Yamei, Wu; Ruixia, Yang; Hanmin, Tian; Shuai, Chen

    2016-05-01

    Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CH3NH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The photoelectric properties of the CH3NH3PbI3/p-Si heterojunction are studied by testing the current-voltage (I-V) with and without illumination and capacitance-voltage (C-V) characteristics. It turns out from the I-V curve without illumination that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of ±5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current (Isc) of 0.16 μA and an open circuit voltage (Voc) of about 10 mV The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor (MIS) structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This parallel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3PbI3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated. Project supported by the Hebei Province Natural Science Foundation of China (No. F2014202184) and the Tianjin Natural Science Foundation of China (No. 15JCZDJC37800).

  12. Simulation of I-V and C-V curves of metal/GaN/AlGaN/GaN heterostructures with trap-assisted tunnelling

    International Nuclear Information System (INIS)

    Racko, J.; Benko, P.; Grmanova, A.; Harmatha, L.; Breza, J.; Granzner, R.; Schwierz, F.

    2013-01-01

    The described trap-assisted tunnelling (TAT) model of the metal/GaN/Al_xGaN_1_-_x/GaN structure allows analyzing the effect of deep traps upon I-V and C-V characteristics. The negative charge with magnitude proportional to the molar concentration of aluminium gives rise to a barrier at the first heterojunction, which is higher than the Schottky barrier at the metal/GaN interface. On increasing the reverse bias Va the barrier at the first heterojunction is getting lower. The drop of this barrier causes an exponential increase of the reverse current. The current saturates, when the first heterojunction barrier is lower than the Schottky barrier. The effect of TAT can be observed also on varying the parameters of the band of traps. The shape of the simulated C-V curve is affected by changes in the charge on the second heterojunction. In principle it reflects the decrease of electron concentration in the quantum well on increasing the reverse bias V_a. The space charge region becomes wider and the electron concentration at the second heterojunction falls below the concentration of ionized deep trapping centres, which manifests itself as a noticeable drop in the capacitance of the metal/GaN/Al_xGaN_1_-_x/GaN structure. (authors)

  13. TRAZADOR DE CURVAS I-V DE CÓDIGO ABIERTO PARA MONITOREO DE RENDIMIENTO DE PANELES FOTOVOLTAICOS EN BOLIVIA

    Directory of Open Access Journals (Sweden)

    Tatiana Vargas

    2014-07-01

    Full Text Available Se presenta el desarrollo de un trazador de curva I-V de código abierto para el monitoreo de potencia producida por un panel solar en Bolivia, y los resultados obtenidos por éste. El dispositivo está elaborado con componentes de bajo costo y es posible adaptar su diseño para monitorear paneles de diferentes potencias. El dispositivo toma muestras de corriente y voltaje para un elemento fotovoltaico utilizando una carga variable para obtener los diferentes puntos que conforman una curva corriente-voltaje. El dispositivo también tiene un régimen de control, el cual desconecta y reconecta el panel de su carga en intervalos de tiempo fijos para la toma de datos, permitiendo el monitoreo del panel aun cuando está siendo  utilizado en un sistema de energía solar.

  14. A mathematical model describing the glycemic response of diabetic patients to meal and i.v. infusion of insulin.

    Science.gov (United States)

    Fabietti, P G; Calabrese, G; Iorio, M; Bistoni, S; Brunetti, P; Sarti, E; Benedetti, M M

    2001-10-01

    Nine type 1 diabetic patients were studied for 24 hours. During this period they were given three calibrated meals. The glycemia was feedback-controlled by means of an artificial pancreas. The blood concentration of glucose and the infusion speed of the insulin were measured every minute. The experimental data referring to each of the three meals were used to estimate the parameters of a mathematical model suitable for describing the glycemic response of diabetic patients at meals and at the i.v. infusion of exogenous insulin. From the estimate a marked dispersion of the parameters was found, both interindividual and intraindividual. Nevertheless the models thus obtained seem to be usable for the synthesis of a feedback controller, especially in view of creating a portable artificial pancreas that now seems possible owing to the realization (so far experimental) of sufficiently reliable glucose concentration sensors.

  15. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

    International Nuclear Information System (INIS)

    Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

    2011-01-01

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  16. Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

    Directory of Open Access Journals (Sweden)

    O. M. Hontaruk

    2015-04-01

    Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

  17. Association between continuous peripheral i.v. infusion of 3% sodium chloride injection and phlebitis in adults.

    Science.gov (United States)

    Meng, Lina; Nguyen, Cherwyn M; Patel, Samit; Mlynash, Michael; Caulfield, Anna Finley

    2018-03-01

    One institution's experience with use of peripheral i.v. (PIV) catheters for prolonged infusions of 3% sodium chloride injection at rates up to 100 mL/hr is described. A prospective, observational, 13-month quality assurance project was conducted at an academic medical center to evaluate frequencies of patient and catheter phlebitis among adult inpatients who received both an infusion of 3% sodium chloride injection for a period of ≥4 hours through a dedicated PIV catheter and infusions of routine-care solutions (RCSs) through separate PIV catheters during the same hospital stay. Sixty patients received PIV infusions through a total of 291 catheters during the study period. The majority of patients (78%) received infusions of 3% sodium chloride injection for intracranial hypertension, with 30% receiving such infusions in the intensive care unit. Phlebitis occurred in 28 patients (47%) during infusions of 3% sodium chloride and 26 patients (43%) during RCS infusions ( p = 0.19). Catheter phlebitis occurred in 73 catheters (25%), with no significant difference in the frequencies of catheter phlebitis with infusion of 3% sodium chloride versus RCSs (30% [32 of 106 catheters]) versus 22% [41 of 185 catheters]), p = 0.16). Patient and catheter phlebitis rates were not significantly different with infusions of 3% sodium chloride injection versus RCSs, suggesting that an osmolarity cutoff value of 900 mOsm/L for peripheral infusions of hypertonic saline solutions may not be warranted. Copyright © 2018 by the American Society of Health-System Pharmacists, Inc. All rights reserved.

  18. Determination of the faecal excretion of labelled bile salts after i.v. administration of 14 C-cholic

    International Nuclear Information System (INIS)

    Andersson, H.; Filipsson, S.; Hulten, L.

    1978-01-01

    By measuring total faecal radioactivity, correlated to 24-hour enterohepatic circulation following i.v. administration of 14 C-cholic acid, bile salt malabsorption was evaluated before and/or after surgery in 80 patients with Crohn's disease localized to the ileum and/or the colon and the results related to the length of ileum diseased or resected. Before operation bile salt malabsorption was observed only in patients with inflammation of the terminal ileum, but no significant correlation was found between bile salt excretion and the extent of ileal disease. In patients subjected to ileal resection with sacrifice of the ileocaecal valve, bile salt malabsorption correlated strongly to the length of ileum resected. This correlation was about the same in ileostomy patients and in patients subjected to restorative operation. It is concluded that determination of 14 C in faeces is a more sensitive test than the Schilling test and the faecal fat excretion test in reflecting ileal dysfunction, at least in patients with ileal resections. (Auth.)

  19. Inappropriate suppression of glucagon during OGTT but not during isoglycaemic i.v. glucose infusion contributes to the reduced incretin effect in type 2 diabetes mellitus

    DEFF Research Database (Denmark)

    Knop, F K; Vilsbøll, T; Madsbad, S

    2007-01-01

    AIMS/HYPOTHESIS: We investigated glucagon responses during OGTT and isoglycaemic i.v. glucose infusion, respectively, to further elucidate the mechanisms behind the glucose intolerance in patients with type 2 diabetes. MATERIALS AND METHODS: Ten patients (eight men) with type 2 diabetes (age: 64...... during the 2 days was obtained in both groups. In the control subjects no difference in glucagon suppression during the first 45 min of OGTT and isoglycaemic i.v. glucose infusion (-36 +/- 12 vs -64 +/- 23 mmol/l x 45 min; p = NS) was observed, whereas in the group of patients with type 2 diabetes...... significant glucagon suppression only occurred following isoglycaemic i.v. glucose infusion (-63 +/- 21 vs 10 +/- 16 mmol/l x 45 min; p = 0.002). The incretin effect was significantly reduced in patients with type 2 diabetes compared with control subjects, but no significant differences in the secretion...

  20. The influence of internal current loop on transient response performance of I-V droop controlled paralleled DC-DC converters

    DEFF Research Database (Denmark)

    Wang, Haojie; Han, Minxiao; Guerrero, Josep M.

    2017-01-01

    The external droop control loop of I-V droop control is designed as a voltage loop with embedded virtual impedance, so the internal current loop plays a major role in the system bandwidth. Thus, in this paper, the influence of internal current loop on transient response performance of I-V droop...... controlled paralleled dc-dc converters is analyzed, which is guided and significant for its industry application. The model which is used for dynamic analysis is built, and the root locus method is used based on the model to analyze the dynamic response of the system by shifting different control parameters...

  1. Autoshaping i.v. cocaine self-administration in rats: effects of nondrug alternative reinforcers on acquisition.

    Science.gov (United States)

    Carroll, M E; Lac, S T

    1993-01-01

    The purpose of this experiment was to examine the effects of a nondrug alternative reinforcer and feeding conditions on the acquisition of cocaine self-administration. Rats were autoshaped to press a lever that resulted in a 0.2 mg/kg i.v. cocaine infusion. Responses on the lever were monitored during six consecutive autoshaping sessions that occurred each day. A retractable lever was inserted into the operant chamber on a random time 60 s schedule 10 times per session for six sessions that began each hour. Each day the six autoshaping sessions were followed by a 6-h cocaine self-administration session. During self-administration the lever remained extended, and each response on the lever resulted in a cocaine infusion (0.2 mg/kg). The criterion for acquisition of cocaine-reinforced behavior was met when there were 5 consecutive days during which the mean number of infusions during the 6-h self-administration session was at least 100. This procedure was repeated daily until the criterion was met or 30 days elapsed. The rats were also trained to respond on lick-operated automatic drinking devices that delivered 0.05 ml water or a glucose and saccharin solution (G + S) contingent upon each lick response. Five groups of 12-14 rats were compared. The first four groups constituted a 2 x 2 factorial design whereby either G + S or water was available in the home cage for 3 weeks before autoshaping began and G + S or water was available in the operant chamber during autoshaping. These groups were limited to 20 g food per day and all had free access to water.(ABSTRACT TRUNCATED AT 250 WORDS)

  2. Diagnosing feline infectious peritonitis using the Sysmex XT-2000iV based on frozen supernatants from cavitary effusions.

    Science.gov (United States)

    Stranieri, Angelica; Paltrinieri, Saverio; Giordano, Alessia

    2017-05-01

    The delta total nucleated cells (ΔTNC) measurement with the Sysmex XT-2000iV (Sysmex Europe, Norderstedt, Germany) has high diagnostic accuracy on effusions in feline infectious peritonitis (FIP) cases, but the test can be performed only on fresh samples. We evaluated whether supernatants from effusions retain the ability to induce cell clumping and assessed the diagnostic accuracy of this modified ΔTNC method. Effusions were collected from FIP cats ( n = 19) and from cats with other diseases ( n = 15). ΔTNC was measured on fresh samples and on frozen-thawed supernatants after the addition of feline blood at 1:10 dilution. Diagnostic accuracy was assessed at the cutoffs of suggestive of FIP (ΔTNC = 1.7) and consistent with FIP (ΔTNC = 3.4). The influence of the protein content, number of added cells, and magnitude of dilution were also investigated. Specificity and positive predictive value were 100% for both the methods. Sensitivity and negative predictive value were higher for the modified ΔTNC (84.2% and 83.3%, respectively, at the cutoff of 1.7; 78.9% and 78.9%, respectively, at the cutoff of 3.4) than for the ΔTNC on fresh samples (78.6% and 81.3%, respectively, at the cutoff of 1.7; 57.1% and 68.4%, respectively, at the cutoff of 3.4). Protein content, total cell count of the added blood, and magnitude of dilutions did not influence the results. Supernatants of frozen effusions from FIP cats retain the ability to induce cell clumping, thus the modified ΔTNC measurement is a reliable tool to diagnose FIP on samples that cannot be analyzed immediately.

  3. Evaluation of resting brain conditions measured by two different methods (i.v. and oral administration) with 18F-FDG-PET

    International Nuclear Information System (INIS)

    Masud, M.; Yamaguchi, Keiichiro; Rikimaru, Hisashi; Tashiro, Manabu; Ozaki, Kaoru; Watanuki, Shoichi; Miyake, Masayasu; Ido, Tatsuo; Itoh, Masatoshi

    2001-01-01

    Our aim was to evaluate regional differences between brain activity in two resting control conditions measured by 3D PET after administration of FDG through either the intravenous (i.v.) or the oral route. Ten healthy male volunteers engaged in the study as the i.v. group (mean age, 26±9.3 years, ±S.D.) who received FDG intravenously and another 10 volunteers as the oral group (mean age, 27.9±11.3 years, ±S.D.) who received FDG per os. A set of 3D-PET scans (emission and transmission scans) were performed in both groups. To explore possible functional differences between the brains of the two groups, the SPM-96 software was used for statistical analysis. The results revealed that glucose metabolism was significantly higher in the superior frontal gyrus, superior parietal lobule, lingual gyrus and left cerebellar hemisphere in the i.v. group than in the oral group. Metabolically active areas were found in the superior, middle and inferior temporal gyrus, parahippocampal gyrus, amygdaloid nucleus, pons and cerebellum in the oral group when compared with the i.v. group. These differences were presumably induced by differences between FDG kinetics and/or time-weighted behavioral effects in the two studies. This study suggests the need for extreme caution when selecting a pooled control population for designated activation studies. (author)

  4. Development of microsecond generators with plasma current interrupting switch in I.V. Kurchatov Institute of Atomic Energy. Frequency operation of generators

    International Nuclear Information System (INIS)

    Babykin, V.M.; Chikin, R.V.; Dolgachev, G.I.; Golovanov, Yu.P.; Kovalev, Yu.I.; Ushakov, A.G.; Zakatov, L.P.

    1993-01-01

    This paper is a follow up to previously published work on microsecond plasma current interrupting switches (PCIS), which has been conducted in the I.V. Kurchatov Inst. Here the authors present some information on the practical implementation of such devices, and provide an overview of new research facilities

  5. Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    DEFF Research Database (Denmark)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  6. Evaluation of resting brain conditions measured by two different methods (i.v. and oral administration) with {sup 18}F-FDG-PET

    Energy Technology Data Exchange (ETDEWEB)

    Masud, M.; Yamaguchi, Keiichiro; Rikimaru, Hisashi; Tashiro, Manabu; Ozaki, Kaoru; Watanuki, Shoichi; Miyake, Masayasu; Ido, Tatsuo; Itoh, Masatoshi [Tohoku Univ., Sendai (Japan). Cyclotron and Radioisotope Center

    2001-02-01

    Our aim was to evaluate regional differences between brain activity in two resting control conditions measured by 3D PET after administration of FDG through either the intravenous (i.v.) or the oral route. Ten healthy male volunteers engaged in the study as the i.v. group (mean age, 26{+-}9.3 years, {+-}S.D.) who received FDG intravenously and another 10 volunteers as the oral group (mean age, 27.9{+-}11.3 years, {+-}S.D.) who received FDG per os. A set of 3D-PET scans (emission and transmission scans) were performed in both groups. To explore possible functional differences between the brains of the two groups, the SPM-96 software was used for statistical analysis. The results revealed that glucose metabolism was significantly higher in the superior frontal gyrus, superior parietal lobule, lingual gyrus and left cerebellar hemisphere in the i.v. group than in the oral group. Metabolically active areas were found in the superior, middle and inferior temporal gyrus, parahippocampal gyrus, amygdaloid nucleus, pons and cerebellum in the oral group when compared with the i.v. group. These differences were presumably induced by differences between FDG kinetics and/or time-weighted behavioral effects in the two studies. This study suggests the need for extreme caution when selecting a pooled control population for designated activation studies. (author)

  7. Effects of irradiation on device characteristics of transistor structures based on AlGaN/GaN

    International Nuclear Information System (INIS)

    Kargin, N.I.; Gromov, D.V.; Kuznetsov, A.L.; Grekhov, M.M.

    2014-01-01

    A technologic scheme was developed, and transistor structures, based on hetero-structures AlGaN/GaN, were made. Current-voltage characteristics of the transistor structures and current-amplification and power-amplification cutoff frequencies have been presented in the paper [ru

  8. Natures and incidences of each normal variations on I.V.P. series of 1000 Korean females

    International Nuclear Information System (INIS)

    Shin, Ok Ja; Chin, Soo Yil

    1980-01-01

    Each organ of body has many normal variation and/or abnormal developments from fetus to adult, especially urogenital system is very complex and markedly abnormal. The authors attempt to analyze the natures, incidences and differences of each normal variations based on I.V.P. series of 1000 Korean females and the review of literatures were carried out. The results are as follows: 1. The normal variations of urinary tracts are about 30 kinds as follows; Aphasia 0/1000 (0%), Hypoplasia 4/1000 (0.4%), Atrophic kidney 0/1000 (0%), Hyperplasia 0/1000 (0%), Hypertrophied kidney 0/1000 (0%), Supernumerary kidney 0/1000 (0%), Pelvic kidney 0/1000 (0%), Wandering kidney 7/1000 (7%), Horseshoe kidney 2/1000 (2%), Nephroptosis 6/1000 (0.6%), Malroated kidney 0/1000 (0%), Crossed ecotopic kidney 0/1000 (0%), Ureteral kingking 440/1000 (44.0%), Short ureter 3/1000 (0.3%), Long ureter 49/1000 (4.9%), Retrocaval ureter 0/1000 (0%), Retroiliac ureter 0/1000 (0%), Mega-ureter 0/1000 (0%), Aberrant vessel in ureter 79/1000 (7.9%), Congenital ureteral valves 0/1000 (0%), Anomalous ureteral orifices 0/1000 (0%), Double ureter 22/1000 (2.2%), Ureteral diverticulum 0/1000 (0%), Extrarenal pelvis 170/1000 (17.0%), Intrarenal pelvis 830/1000 (83.0%), Supernumerary pelvis 55/1000 (55%), Renal backflow 2/1000 0.2%), Multiple calyces 0/1000 (0.1%), Calyceal diverticulum 2/1000 (0.2%), Unilateral fused kidney 0/1000 (0%), Polar enlarged kidney 0/1000 (0%). 2. The order of incidence of common variations in Korean females are as follows: 1. Intrarenal pelvis 2. Ureteral kingking 3. Extrarenal pelvis 4. Aberrant vessel in ureter 5. Double pelvis 6. Long ureter 7. Double ureter 8. Wandering Kidney 9. Nephrotosis 10. Hypoplasia 11. Short ureter 12. Horseshoe kidney 13. Renal backflow 14. Calyceal diverticulum 15. Supernumerary calyces. 3. The most common variations in Korean females are intrarenal pelvis, extrarenal pelvis, aberrant vessel in ureters and most of them are acquired origin. Contrary

  9. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    OpenAIRE

    Mondal, Shampa; Kanta, Kalyani Prasad; Mitra, Partha

    2012-01-01

    Zinc oxide (ZnO) thin films were deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M) of zincate bath and fixed pH (11.00-11.10). Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single ...

  10. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  11. Cocaine action on peripheral, non-monoamine neural substrates as a trigger of electroencephalographic desynchronization and electromyographic activation following i.v. administration in freely moving rats.

    Science.gov (United States)

    Smirnov, M S; Kiyatkin, E A

    2010-01-20

    Many important physiological, behavioral and subjective effects of i.v. cocaine (COC) are exceptionally rapid and transient, suggesting a possible involvement of peripheral neural substrates in their triggering. In the present study, we used high-speed electroencephalographic (EEG) and electromyographic (EMG) recordings (4-s resolution) in freely moving rats to characterize the central electrophysiological effects of i.v. COC at low doses within a self-administration range (0.25-1.0 mg/kg). We found that COC induces rapid, strong, and prolonged desynchronization of cortical EEG (decrease in alpha and increase in beta and gamma activity) and activation of the neck EMG that begin within 2-6 s following the start of a 10-s injection; immediate components of both effects were dose-independent. The rapid effects of COC were mimicked by i.v. COC methiodide (COC-MET), a derivative that cannot cross the blood-brain barrier. At equimolar doses (0.33-1.33 mg/kg), COC-MET had equally fast and strong effects on EEG and EMG total powers, decreasing alpha and increasing beta and gamma activities. Rapid EEG desynchronization and EMG activation was also induced by i.v. procaine, a structurally similar, short-acting local anesthetic with virtually no effects on monoamine uptake; at equipotential doses (1.25-5.0 mg/kg), these effects were weaker and shorter in duration than those of COC. Surprisingly, i.v. saline injection delivered during slow-wave sleep (but not during quiet wakefulness) also induced a transient EEG desynchronization but without changes in EMG and motor activity; these effects were significantly weaker and much shorter than those induced by all tested drugs. These data suggest that in awake animals, i.v. COC induces rapid cortical activation and a subsequent motor response via its action on peripheral non-monoamine neural elements, involving neural transmission via visceral sensory pathways. By providing a rapid neural signal and triggering neural activation, such

  12. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

    Science.gov (United States)

    Gupta, Akriti; Chatterjee, Neel; Kumar, Pradeep; Pandey, Sujata

    2017-08-01

    In this paper, we present the effect of passivation layer on the electrical characteristics of AlGaN/GaN HEMT. The energy band diagram, drain current voltage characteristics, transconductance and cut off frequency was calculated for both long channel and short channel devices. It was found that the electrical characteristics of the device improve with the introduction of high K dielectric in the passivation layer. The results obtained agree well with the data available in literature.

  13. Electrical characterization of polymer matrix — TiO2 filler composites through isothermal polarization / depolarization currents and I-V tests

    Science.gov (United States)

    Stavrakas, Ilias; Triantis, Dimos; Hloupis, George; Moutzouris, Konstantinos

    2014-04-01

    Specimens of polymer matrix — ceramic TiO2 filler composites were prepared. The contribution of the filler content on the electrical conductivity and energy storage properties of the samples was examined. I-V and Isothermal Polarization/Depolarization Current (IPC/IDC) measurements were conducted. Dc conductivity values directly calculated from the I-V curves exhibited excellent agreement with corresponding values derived from the IPC/IDC recordings. Standard models were employed for fitting the IPC/IDC data. In specific, the short and the very long depolarization times were fitted by use of power laws of different slopes, while the intermediate depolarization times were fitted as a sum of three exponential decays. The present study reveals a strong dependence of the depolarization and polarization processes, as well as of the dc conductivity, on the filler concentration.

  14. Minor human antibody response to a mouse and chimeric monoclonal antibody after a single i.v. infusion in ovarian carcinoma patients: a comparison of five assays

    NARCIS (Netherlands)

    Buist, M. R.; Kenemans, P.; van Kamp, G. J.; Haisma, H. J.

    1995-01-01

    The human anti-(mouse Ig) antibody (HAMA) response was measured in serum of 52 patients suspected of having ovarian carcinoma who had received an i.v. injection of either the murine monoclonal antibody (mAb) OV-TL 3 F(ab')2 (n = 28, 1 mg) or the chimeric mouse/human mAb MOv18 (cMOv18; n = 24, 3 mg).

  15. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

  16. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    International Nuclear Information System (INIS)

    Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

  17. Single i.v. ketamine augmentation of newly initiated escitalopram for major depression: results from a randomized, placebo-controlled 4-week study.

    Science.gov (United States)

    Hu, Y-D; Xiang, Y-T; Fang, J-X; Zu, S; Sha, S; Shi, H; Ungvari, G S; Correll, C U; Chiu, H F K; Xue, Y; Tian, T-F; Wu, A-S; Ma, X; Wang, G

    2016-02-01

    While oral antidepressants reach efficacy after weeks, single-dose intravenous (i.v.) ketamine has rapid, yet time-limited antidepressant effects. We aimed to determine the efficacy and safety of single-dose i.v. ketamine augmentation of escitalopram in major depressive disorder (MDD). Thirty outpatients with severe MDD (17-item Hamilton Rating Scale for Depression total score ⩾ 24) were randomized to 4 weeks double-blind treatment with escitalopram 10 mg/day+single-dose i.v. ketamine (0.5 mg/kg over 40 min) or escitalopram 10 mg/day + placebo (0.9% i.v. saline). Depressive symptoms were measured using the Montgomery-Asberg Depression Rating Scale (MADRS) and the Quick Inventory of Depressive Symptomatology - Self-Report (QIDS-SR). Suicidal ideation was evaluated with the QIDS-SR item 12. Adverse psychopathological effects were measured with the Brief Psychiatric Rating Scale (BPRS)-positive symptoms, Young Mania Rating Scale (YMRS) and Clinician Administered Dissociative States Scale (CADSS). Patients were assessed at baseline, 1, 2, 4, 24 and 72 h and 7, 14, 21 and 28 days. Time to response (⩾ 50% MADRS score reduction) was the primary outcome. By 4 weeks, more escitalopram + ketamine-treated than escitalopram + placebo-treated patients responded (92.3% v. 57.1%, p = 0.04) and remitted (76.9% v. 14.3%, p = 0.001), with significantly shorter time to response [hazard ratio (HR) 0.04, 95% confidence interval (CI) 0.01-0.22, p escitalopram + placebo, escitalopram + ketamine was associated with significantly lower MADRS scores from 2 h to 2 weeks [(peak = 3 days-2 weeks; effect size (ES) = 1.08-1.18)], QIDS-SR scores from 2 h to 2 weeks (maximum ES = 1.27), and QIDS-SR suicidality from 2 to 72 h (maximum ES = 2.24). Only YMRS scores increased significantly with ketamine augmentation (1 and 2 h), without significant BPRS or CADSS elevation. Single-dose i.v. ketamine augmentation of escitalopram was safe and effective in severe MDD, holding promise for speeding up

  18. Bio-social factors and perceptions of life with quality: a challenge to the adherence of h i v patients to the antirretroviral treatment

    Directory of Open Access Journals (Sweden)

    John Harold Estrada M

    2008-06-01

    Full Text Available In spite that antirretroviral therapy has contributed to improve life quality among people living with h i v, adherence to the treatment still persists as a major obstacle for therapeutic success. In order to assess the biosocial factors that contributes to adherence to this therapy by people with h i v. In order to evaluate the bio-social aspects that facilitate or obstruct the adherence to the treatment, a qualitative study combining ethnographic research, a hermeneutic approach to narratives, and a situational analysis of life experiences of people living with h i v in Colombia. Two theoretical categories were applied throughout the study: Victoria Camps’ life with quality and Saussure’s auto- and hetero-perception. All of the ten people who took part in the study were male patients who were attending an integral oral health program. The main factors that obstruct the adherence to the therapy were the following: 1 the discourse of the medical team loaded with biomedical jargon; 2 the dosages and side effects of the medications used in Colombia; 3 negative attitudes linked to a poor selfimage, a low social capital, and a low self-esteem; 4 low expectations in regards to a life with quality accompanied by the therapy. Among the factors that promote adherence the following were identified: 1 intra- and inter-personal negotiation processes based on the h i v serum status and the treatment; 2 knowledge about those negotiations by family members, friends, coworkers, and sentimental partners; 3 a positive perception of improvement in life quality while in treatment; 4 expectations of a life with quality depending on the adherence. Nevertheless, it was also found that those factors that contribute or impede adherence change rapidly and produce swinging in the person’s mood. This mood is here understood as a complex feeling concerning life with quality in constant change, both merging individual and social aspects implied in the experience of

  19. Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye

    International Nuclear Information System (INIS)

    Imer, A Gencer; Korkut, A; Tombak, A

    2016-01-01

    Bromothymol blue (BTB) with the molecular formula of C 27 H 28 Br 2 O 5 S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage ( I-V ) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage ( C-V ), conductance-voltage ( G-V ) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical and photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer. (paper)

  20. Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

    Science.gov (United States)

    Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

    2018-04-01

    The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

  1. Full splitting of the first zero-field steps in the I-V curve of Josephson junctions of intermediate length

    International Nuclear Information System (INIS)

    Hansen, J.B.; Divin, Y.Y.; Mygind, J.

    1986-01-01

    We report on the observation of full splitting of the first zero-field steps in the I-V curves of Josephson transmission lines of intermediate length Lroughly-equal(3--5)lambda/sub J/, where lambda/sub J/ is the Josephson penetration length. We study in detail how this splitting of the step into two branches depends on the temperature of the junction and on a weak applied magnetic field. We relate the splitting to excitations in the junctions whose behavior is described by the perturbed Sine-Gordon equation

  2. Study on the emission characteristics of cathodes in an ionized gas flow

    International Nuclear Information System (INIS)

    Maslennikov, N.M.

    1975-01-01

    Emission characteristics of molybdenum, tungsten and tantalum cathodes in a flow of argon and argon-potassium plasma with gas pressure of 0.04 atm, 1 atm and 0.25 atm were investigated. Gas was heated in a plasmatron. Measuring electrodes were arranged across the gas flow. Investigations in an argon plasma were carried out with the object of comparing of current-voltage dependences for potassium-activated and nonactivated cathodes. In all cases the current-voltage characteristics were growing. No saturation was observed of a current between accurent electrodes. The increase of a current between the cathodes due to the thermionic emission from the cathode began to effect at the cathode temperature of 2.470 K. The work function was found to be 5 to 5.2 ev. The comparison of the results obtained experimentally in the paper show a qualitative coincidence with calculations by some authors and a discrepancy with theoretical conceptions of other authors

  3. Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Sorochkin, A. V., E-mail: alexandersm@mail.ru; Varavin, V. S.; Predein, A. V.; Sabinina, I. V.; Yakushev, M. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2012-04-15

    Test photodiodes in the form of mesa structures with different areas from 30 Multiplication-Sign 30 to 100 Multiplication-Sign 100 {mu}m in size are fabricated based on a Cd{sub x}Hg{sub 1-x}Te/Si structure at x = 0.235, grown by molecular-beam epitaxy (MBE). The current-voltage characteristics of the diodes are measured in the dark and under background light conditions. The experimental results are compared with theoretical calculations. It is found that the dependence of the photodiode photocurrent and dark current on the mesa structure size appears in the mesa size ranges from 30 Multiplication-Sign 30 to 80 Multiplication-Sign 80 {mu}m. The dark current decreases and the photocurrent increases with decreasing mesa size. The mechanisms affecting the behavior of current-voltage characteristics are discussed.

  4. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharjee, Snigdha; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics National Institute Technology Silchar Silchar-788010, Assam (India)

    2015-05-15

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

  5. Subharmonic gap structure in the characteristics of YBa2Cu3O7-x microbridges

    International Nuclear Information System (INIS)

    Pogrebnyakov, A.V.; Levinsen, M.T.; Sheng, Y.Q.; Freltoft, T.

    1996-01-01

    The subharmonic gap structures corresponding to large, 2Δ 1 =48 meV, and small, 2Δ 2 =10.3 meV, components of the energy gap were observed in the first derivatives of the current-voltage characteristics of YBa 2 Cu 3 O 7-x epitaxial thin film microbridges. The appearance of the subharmonic gap structures is attributed to Andreev reflection. (orig.)

  6. Investigation of thermometrical characteristics of p+–n-GaP diodes

    Directory of Open Access Journals (Sweden)

    Sypko N. I.

    2008-12-01

    Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

  7. Construction of Tungsten Halogen, Pulsed LED, and Combined Tungsten Halogen-LED Solar Simulators for Solar Cell I-V Characterization and Electrical Parameters Determination

    Directory of Open Access Journals (Sweden)

    Anon Namin

    2012-01-01

    Full Text Available I-V characterization of solar cells is generally done under natural sunlight or solar simulators operating in either a continuous mode or a pulse mode. Simulators are classified on three features of irradiance, namely, spectral match with respect to air mass 1.5, spatial uniformity, and temporal stability. Commercial solar simulators use Xenon lamps and halogen lamps, whereas LED-based solar simulators are being developed. In this work, we build and test seven simulators for solar cell characterization, namely, one tungsten halogen simulator, four monochromatic (red, green, blue, and white LED simulators, one multicolor LED simulator, and one tungsten halogen-blue LED simulator. The seven simulators provide testing at nonstandard test condition. High irradiance from simulators is obtained by employing elevated supply voltage to tungsten halogen lamps and high pulsing voltages to LEDs. This new approach leads to higher irradiance not previously obtained from tungsten halogen lamps and LEDs. From I-V curves, electrical parameters of solar cell are made and corrected based on methods recommended in the IEC 60891 Standards. Corrected values obtained from non-STC measurements are in good agreement with those obtained from Class AAA solar simulator.

  8. Ab initio calculation of contact effects on electron transport through single molecules by the RTM/NEGF method

    International Nuclear Information System (INIS)

    Hirose, Kenji; Kobayashi, Nobuhiko

    2006-01-01

    Using the recursion-transfer-matrix (RTM) method combined with the nonequilibrium Green's function (NEGF) method, we study the electronic states and current-voltage (I-V) characteristics of atomic-scale nanocontact systems. We find that non-linear behaviors appear in the I-V characteristics even without molecules between electrodes. Such non-linear behaviors emerge when the nanocontacts are not well constructed and the transport properties change from tunneling to ballistic regimes

  9. Magneto-electronic properties and spin-resolved I-V curves of a Co/GeSe heterojunction diode: an ab initio study

    Science.gov (United States)

    Makinistian, Leonardo; Albanesi, Eduardo A.

    2013-06-01

    We present ab initio calculations of magnetoelectronic and transport properties of the interface of hcp Cobalt (001) and the intrinsic narrow-gap semiconductor germanium selenide (GeSe). Using a norm-conserving pseudopotentials scheme within DFT, we first model the interface with a supercell approach and focus on the spin-resolved densities of states and the magnetic moment (spin and orbital components) at the different atomic layers that form the device. We also report a series of cuts (perpendicular to the plane of the heterojunction) of the electronic and spin densities showing a slight magnetization of the first layers of the semiconductor. Finally, we model the device with a different scheme: using semiinfinite electrodes connected to the heterojunction. These latter calculations are based upon a nonequilibrium Green's function approach that allows us to explore the spin-resolved electronic transport under a bias voltage (spin-resolved I-V curves), revealing features of potential applicability in spintronics.

  10. Synthesis of novel carbazole derived substances using some organoboron compounds by palladium catalyzed and investigation of its semiconductor device characteristics

    Science.gov (United States)

    Gorgun, Kamuran; Caglar, Yasemin

    2018-04-01

    Carbazole compounds in particular represent one of the most intensely used and studied class of semiconducting materials. In this study, considering the information given in the literature the Ullman and Suzuki-Miyaura coupling reaction were carried out using carbazole, 1,4-dibromobenzene and pyrene-1-boronic acid. The synthesized carbazole derivatives are characterized by 1H NMR and elemental analysis. The spectroscopic and thermal properties of the synthesized novel carbazole derivative 9-(4-(pyren-4-yl)phenyl)-9H-carbazole (Cz-py) were investigated. And also, the n-Si/p-Cz:py heterojunction diode was fabricated. The electrical properties of this diode were characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements.

  11. Download this PDF file

    African Journals Online (AJOL)

    Vz(nkT/qu)J (2). ,which is Ohm's Law. In such a case the I-V curve becomes symmetric and linear (ohmic). However, if the current-voltage characteristics is such that it is neither J > >. Jo, nor 1 < < Jo, i.e., intermediate between the two limits, then the I-V curve becomes non—ohmic and non-rectifying. It is symmetrical and ...

  12. A kinetic Monte Carlo model with improved charge injection model for the photocurrent characteristics of organic solar cells

    Science.gov (United States)

    Kipp, Dylan; Ganesan, Venkat

    2013-06-01

    We develop a kinetic Monte Carlo model for photocurrent generation in organic solar cells that demonstrates improved agreement with experimental illuminated and dark current-voltage curves. In our model, we introduce a charge injection rate prefactor to correct for the electrode grid-size and electrode charge density biases apparent in the coarse-grained approximation of the electrode as a grid of single occupancy, charge-injecting reservoirs. We use the charge injection rate prefactor to control the portion of dark current attributed to each of four kinds of charge injection. By shifting the dark current between electrode-polymer pairs, we align the injection timescales and expand the applicability of the method to accommodate ohmic energy barriers. We consider the device characteristics of the ITO/PEDOT/PSS:PPDI:PBTT:Al system and demonstrate the manner in which our model captures the device charge densities unique to systems with small injection energy barriers. To elucidate the defining characteristics of our model, we first demonstrate the manner in which charge accumulation and band bending affect the shape and placement of the various current-voltage regimes. We then discuss the influence of various model parameters upon the current-voltage characteristics.

  13. Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

    NARCIS (Netherlands)

    Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

    2008-01-01

    We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

  14. Electron heating by photon-assisted tunneling in niobium terahertz mixers with integrated niobium titanium nitride striplines

    NARCIS (Netherlands)

    Leone, B; Gao, [No Value; Klapwijk, TM; Jackson, BD; Laauwen, WM; de Lange, G

    2001-01-01

    We describe the gap voltage depression and current-voltage (I-V) characteristics in pumped niobium superconductor-insulator-superconductor junction with niobium titanium nitride tuning stripline by introducing an electron heating power contribution resulting from the photon-assisted tunneling

  15. Local charge transport properties of hydrazine reduced monolayer graphene oxide sheets prepared under pressure condition

    DEFF Research Database (Denmark)

    Ryuzaki, Sou; Meyer, Jakob Abild Stengaard; Petersen, Søren Vermehren

    2014-01-01

    Charge transport properties of chemically reduced graphene oxide (RGO) sheets prepared by treatment with hydrazine were examined using conductive atomic force microscopy. The current-voltage (I-V) characteristics of monolayer RGO sheets prepared under atmospheric pressure followed an exponentially...

  16. Modelling transport in single electron transistor

    International Nuclear Information System (INIS)

    Dinh Sy Hien; Huynh Lam Thu Thao; Le Hoang Minh

    2009-01-01

    We introduce a model of single electron transistor (SET). Simulation programme of SET is used as the exploratory tool in order to gain better understanding of process and device physics. This simulator includes a graphic user interface (GUI) in Matlab. The SET was simulated using GUI in Matlab to get current-voltage (I-V) characteristics. In addition, effects of device capacitance, bias, temperature on the I-V characteristics were obtained. In this work, we review the capabilities of the simulator of the SET. Typical simulations of the obtained I-V characteristics of the SET are presented.

  17. Hepatic 123I-insulin binding kinetics in non-insulin-dependent (Type 2) diabetic patients after i.v. bolus administration

    International Nuclear Information System (INIS)

    Oolbekkink, M.; Veen, E.A. van der; Heine, R.J.; Hollander, W. den; Nauta, J.J.P.

    1989-01-01

    Insulin binding kinetics in the liver were studied in non insulin dependent (Type 2) diabetic patients, by i.v. bolus administration of 123 I-insulin. Eight Type 2 diabetic patients were compared with six male volunteers. Uptake of 123 I-insulin by liver and kidneys was measured by dynamic scintigraphy with a gamma camera during 30 min. Images of liver and kidneys appeared within 2-3 min after administration of 123 I-insulin at a dose of 1 mCi (37 MBq). Peak radioactivity for the liver was found 7.5±0.2 and 6.9±0.3 min after injection for the healthy and the diabetic subjects, respectively (N.S.). The percentage 123 I-insulin hepatic uptake was not significantly different for the diabetic and the healthy subjects. Although a large variation exists for maximal uptake of radioactivity within both groups, the data suggest that binding differences in the liver in Type 2 diabetic patients, as compared to healthy subjects, may not account for hepatic insulin resistance. (orig.)

  18. Stable long-term pulmonary function after fludarabine, antithymocyte globulin and i.v. BU for reduced-intensity conditioning allogeneic SCT.

    Science.gov (United States)

    Dirou, S; Malard, F; Chambellan, A; Chevallier, P; Germaud, P; Guillaume, T; Delaunay, J; Moreau, P; Delasalle, B; Lemarchand, P; Mohty, M

    2014-05-01

    Lung function decline is a well-recognized complication following allogeneic SCT (allo-SCT). Reduced-intensity conditioning (RIC) and in vivo T-cell depletion by administration of antithymocyte globulin (ATG) may have a protective role in the occurrence of late pulmonary complications. This retrospective study reported the evolution of lung function parameters within the first 2 years after allo-SCT in a population receiving the same RIC regimen that included fludarabine and i.v. BU in combination with low-dose ATG. The median follow-up was 35.2 months. With a median age of 59 years at the time of transplant, at 2 years, the cumulative incidences of non-relapse mortality was as low as 9.7%. The cumulative incidence of relapse was 33%. At 2 years, the cumulative incidences of extensive chronic GVHD (cGVHD) and of pulmonary cGVHD were 23.1% and 1.9%, respectively. The cumulative incidences of airflow obstruction and restrictive pattern were 3.8% and 9.6%, respectively. Moreover, forced expiratory volume (FEV1), forced vital capacity (FVC) and FEV1/FVC ratio remained stable from baseline up to 2 years post transplantation (P=0.26, P=0.27 and P=0.07, respectively). These results correspond favorably with the results obtained with other RIC regimens not incorporating ATG, and suggest that ATG may have a protective pulmonary role after allo-SCT.

  19. Use of continuous ambulatory infusions of concentrated subcutaneous (s.q.) hydromorphone versus intravenous (i.v.) morphine: cost implications for palliative care.

    Science.gov (United States)

    Fudin, J; Smith, H S; Toledo-Binette, C S; Kenney, E; Yu, A B; Boutin, R

    2000-01-01

    Health care practitioners are increasingly under pressure to curtail spending while trying to deliver excellent patient care. These issues are also affecting palliative care, particularly now that palliative care programs are expanding. A comparison of cost-effectiveness and feasibility of using continuous subcutaneous (s.q.) ambulatory infusion of hydromorphone versus intravenous (i.v.) ambulatory morphine is illustrated in this study. With the high doses of morphine required in chronic cancer pain, the use of subcutaneous morphine is not feasible due to the volume of solution required to be delivered. Hydromorphone can be prepared in concentrated solutions enabling it to be delivered by the subcutaneous route. Morphine stability data are available. However, hydromorphone stability has only been verified for seven days; thus, stability data were needed post-seven days. Concentrations of 10 mg/ml, 20 mg/ml, 50 mg/ml, and 100 mg/ml, in 0.9 percent normal saline or dextrose 5 percent water, were analyzed via high-performance liquid chromatography (HPLC) at seven and 28 days. Cost comparisons of supplies and associated costs with subcutaneous versus intravenous solutions were obtained. Hydromorphone was found to be stable for 28 days in both dilutants. Cost analysis of a hydromorphone 28-day supply resulted in substantial savings over the equivalent costs of morphine infusions.

  20. High diagnostic accuracy of the Sysmex XT-2000iV delta total nucleated cells on effusions for feline infectious peritonitis.

    Science.gov (United States)

    Giordano, Alessia; Stranieri, Angelica; Rossi, Gabriele; Paltrinieri, Saverio

    2015-06-01

    The ΔWBC (the ratio between DIFF and BASO counts of the Sysmex XT-2000iV), hereafter defined as ΔTNC (total nucleated cells), is high in effusions due to feline infectious peritonitis (FIP), as cells are entrapped in fibrin clots formed in the BASO reagent. Similar clots form in the Rivalta's test, a method with high diagnostic accuracy for FIP. The objective of this study was to determine the diagnostic accuracy for FIP and the optimal cutoff of ΔTNC. After a retrospective search of our database, DIFF and BASO counts, and the ΔTNC from cats with and without FIP were compared to each other. Sensitivity, specificity, and positive and negative likelihood ratios (LR+, LR-) were calculated. A ROC curve was designed to determine the cutoff for best sensitivity and specificity. Effusions from 20 FIP and 31 non-FIP cats were analyzed. The ΔTNC was higher (P  2.5 had 100% specificity. The ΔTNC has a high diagnostic accuracy for FIP-related effusions by providing an estimate of precipitable proteins, as the Rivalta's test, in addition to the cell count. As fibrin clots result in false lower BASO counts, the ΔTNC is preferable to the WBC count generated by the BASO channel alone in suspected FIP effusions. © 2015 American Society for Veterinary Clinical Pathology.

  1. Detailed clinicopathological characterization of progressive alopecia areata patients treated with i.v. corticosteroid pulse therapy toward optimization of inclusion criteria.

    Science.gov (United States)

    Sato, Misato; Amagai, Masayuki; Ohyama, Manabu

    2014-11-01

    The management of progressive alopecia areata (AA) is often challenging. Recently, i.v. corticosteroid pulse therapy has been reported to be effective for acute and severe AA, however, inclusion criteria have not been sufficiently precise, leaving a chance that its efficacy could be further improved by optimizing therapeutic indications. In our attempts to delineate the factors that correlate with favorable outcomes, we minutely evaluated the clinicopathological findings and the prognoses of single-round steroid pulse-treated progressive AA cases with full sets of image and pathology records during the course. Almost complete hair regrowth has been achieved and maintained up to 2 years in five out of seven AA patients with varying degrees of clinical severity. Interestingly, the worst clinical presentation observed during the course correlated with the size of the area where hairs with dystrophic roots were pulled rather than the extent of visible hair loss on the first visit. Dermoscopy detected disease spread but contributed little in assessing prognoses. Dense perifollicular cell infiltration was detected in all cases treated within 4 weeks of onset and those treated later but with excellent response. Importantly, the cases with poor or incomplete hair regrowth were treated 6-8 weeks of onset and showed moderate inflammatory change with high telogen conversion rate. These findings mandate global dermoscopy and hair pull test for judging the treatment indication and suggest that early administration of high-dose corticosteroid, ideally within 4 weeks of onset, enable efficient suppression of active inflammation and maximize the effectiveness of the remedy. © 2014 Japanese Dermatological Association.

  2. Effect of prewarming EDTA blood samples to 37°C on platelet count measured by Sysmex XT-2000iV in dogs, cats, and horses.

    Science.gov (United States)

    Williams, Tim L; Archer, Joy

    2016-09-01

    Pseudothrombocytopenia secondary to platelet clumping is a common cause of preanalytic error for platelet counts in dogs, cats, and horses. In human beings, it is suggested that prewarming blood samples to 37°C prior to hematology analysis will reduce platelet clumping. The purpose of the study was to evaluate the effect of prewarming EDTA blood samples to 37°C on measured platelet counts and other hematologic variables. The EDTA blood samples from dogs, cats and horses submitted to the clinical pathology laboratory at the University of Cambridge were included. Complete blood cell counts performed using a Sysmex XT-2000iV hematology analyzer were done on samples at room temperature (approximately 22°C) and following warming of the samples to 37°C in a water bath. The Wilcoxon signed rank test was used to compare hematologic variables, including platelet count, before and after sample warming to 37°C. Data are presented as median (25(th) , 75(th) percentile) increase. Blood samples from 39 dogs, 19 cats, and 10 horses were included. Sample warming to 37°C resulted in a statistically significant increase in platelet counts in dogs (11 [-2, 30] ×10(9) /L), cats (36 [14, 84] ×10(9) /L), and horses (42 [31, 79] ×10(9) /L). Sample warming did not significantly affect other hematologic variables. Prewarming EDTA blood samples to 37°C prior to hematologic analysis increased platelet counts overall in canine, feline, and equine blood, but did not abrogate platelet clumping and pseudothrombocytopenia fully in some cases. Furthermore, true pseudothrombocytopenia was not confirmed in these animals. © 2016 American Society for Veterinary Clinical Pathology.

  3. Stability of i.v. admixture containing metoclopramide, diphenhydramine hydrochloride, and dexamethasone sodium phosphate in 0.9% sodium chloride injection.

    Science.gov (United States)

    Kintzel, Polly E; Zhao, Ting; Wen, Bo; Sun, Duxin

    2014-12-01

    The chemical stability of a sterile admixture containing metoclopramide 1.6 mg/mL, diphenhydramine hydrochloride 2 mg/mL, and dexamethasone sodium phosphate 0.16 mg/mL in 0.9% sodium chloride injection was evaluated. Triplicate samples were prepared and stored at room temperature without light protection for a total of 48 hours. Aliquots from each sample were tested for chemical stability immediately after preparation and at 1, 4, 8, 24, and 48 hours using liquid chromatography-tandem mass spectrometry (LC-MS/MS) analysis. Metoclopramide, diphenhydramine hydrochloride, and dexamethasone sodium phosphate were selectively monitored using multiple-reaction monitoring. Samples were diluted differently for quantitation using three individual LC-MS/MS methods. To determine the drug concentration of the three compounds in the samples, three calibration curves were constructed by plotting the peak area or the peak area ratio versus the concentration of the calibration standards of each tested compound. Apixaban was used as an internal standard. Linearity of the calibration curve was evaluated by the correlation coefficient r(2). Constituents of the admixture of metoclopramide 1.6 mg/mL, diphenhydramine hydrochloride 2 mg/mL, and dexamethasone sodium phosphate 0.16 mg/mL in 0.9% sodium chloride injection retained more than 90% of their initial concentrations over 48 hours of storage at room temperature without protection from light. The observed variability in concentrations of these three compounds was within the limits of assay variability. An i.v. admixture containing metoclopramide 1.6 mg/mL, diphenhydramine hydrochloride 2 mg/mL, and dexamethasone sodium phosphate 0.16 mg/mL in 0.9% sodium chloride injection was chemically stable for 48 hours when stored at room temperature without light protection. Copyright © 2014 by the American Society of Health-System Pharmacists, Inc. All rights reserved.

  4. Formulation and characterization of biocompatible and stable I.V. itraconazole nanosuspensions stabilized by a new stabilizer polyethylene glycol-poly(β-Benzyl-l-aspartate) (PEG-PBLA).

    Science.gov (United States)

    Zong, Lanlan; Li, Xiaohua; Wang, Haiyan; Cao, Yanping; Yin, Li; Li, Mengmeng; Wei, Zhihao; Chen, Dongxiao; Pu, Xiaohui; Han, Jihong

    2017-10-05

    Amphiphilic block copolymers, PEG-PBLA with different molecular weights, were synthesized and used as new stabilizers for Itraconazole nannosuspensions (ITZ-PBLA-Nanos). ITZ-PBLA-Nanos were prepared by the microprecipitation-high pressure homogenization method, and the particle size and zeta potential were measured using a ZetaSizer Nano-ZS90. Morphology and crystallinity were studied using TEM, DSC and powder X-ray. The effect of the PEG-to-PBLA ratio, and the drug-to-stabilizer ratio were investigated to obtain the optimal formulation. It was found that the optimal length of hydrophobic block was 25 BLA-NCA molecules and the optimal ratio of drug/stabilizer was 1:1, where the resulted average particle size of ITZ-PBLA-Nanos was 262.1±7.13nm with a PDI value of 0.163±0.011. The images of TEM suggest that ITZ-PBLA-Nanos were rectangular in shape. ITZ existed as crystals in the nanoparticles as suggested by the DSC and XRD results. Compared with the crude drug suspensions, the dissolution rate of ITZ nanocrystals, was significantly increased and was similar to Sporanox ® injection. The ITZ-PBLA-Nanos also demonstrated better dilution stability and storage stability compared with ITZ-F68-Nanos. The particle size of ITZ-PBLA-Nanos did not change significantly after incubated in rat plasma for 24h which is a good attribute for I.V. administration. Acute toxicity tests showed that ITZ-PBLA-Nanos has the highest LD 50 compared with ITZ-F68-Nanos and Sporanox ® injection. ITZ-PBLA-Nanos also showed stronger inhibiting effect on the growth of Candida albicans compared with Sporanox ® injection. Therefore, PEG-PBLA has a promising potential as a biocompatible stabilizer for ITZ nanosuspensions and potentially for other nanosuspensions as well. Copyright © 2017. Published by Elsevier B.V.

  5. Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

    2009-02-25

    ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

  6. Diffusion of Ni, Ga, and As in the surface layer of GaAs and characteristics of the Ni/GaAs contact

    International Nuclear Information System (INIS)

    Uskov, V.A.; Fedotov, A.B.; Erofeeva, E.A.; Rodionov, A.I.; Dzhumakulov, D.T.

    1987-01-01

    The authors investigate the low-temperature codiffusion of Ni, Ga, and As in the surface layer of gallium arsenide and study its effect on the current-voltage characteristics of a Ni/GaAs rectifier contact. The concentration distribution of atoms in the function layer of a Ni-GaAs system was investigated by the methods of layerwise radiometric and neutron-activation analyses. It was found that interdiffusion of components takes place in the Ni-GaAs system in an elastic stress field, generated by the differences in the lattice parameters and thermal-expansion coefficients of Ni, GaAs, and the intermetallic compound which form. The form and parameters of the current-voltage characteristics of a Ni/GaAs contact are determined by the phase composition and the structure of the junction layer

  7. On the Transmission Line Pulse Measurement Technique

    OpenAIRE

    X. Rodriguez; M. Eduardo; M. Harington

    2015-01-01

    Transmission Line Pulse is a short pulse (25ns to 150ns) measurement of the current-voltage (I/V) characteristics of the ESD protection built into an integrated circuit. The short TLP pulses are used to simulate the short ESD pulse threats and integrated circuit must tolerate without being damaged. In this work the fundamental principles of how the TLP pulse is generated and used to create I-V characteristic plots will be explored. The measurement will be then used to characterize the I-V cha...

  8. Actions of Agonists, Fipronil and Ivermectin on the Predominant In Vivo Splice and Edit Variant (RDLbd, I/V) of the Drosophila GABA Receptor Expressed in Xenopus laevis Oocytes

    Science.gov (United States)

    Suwanmanee, Siros; Buckingham, Steven David; Biggin, Philip; Sattelle, David

    2014-01-01

    Ionotropic GABA receptors are the targets for several classes of insecticides. One of the most widely-studied insect GABA receptors is RDL (resistance to dieldrin), originally isolated from Drosophila melanogaster. RDL undergoes alternative splicing and RNA editing, which influence the potency of GABA. Most work has focussed on minority isoforms. Here, we report the first characterisation of the predominant native splice variant and RNA edit, combining functional characterisation with molecular modelling of the agonist-binding region. The relative order of agonist potency is GABA> muscimol> TACA> β-alanine. The I/V edit does not alter the potency of GABA compared to RDLbd. Docking calculations suggest that these agonists bind and activate RDLbdI/V through a similar binding mode. TACA and β-alanine are predicted to bind with lower affinity than GABA, potentially explaining their lower potency, whereas the lower potency of muscimol and isoguvacine cannot be explained structurally from the docking calculations. The A301S (resistance to dieldrin) mutation reduced the potency of antagonists picrotoxin, fipronil and pyrafluprole but the I/V edit had no measurable effect. Ivermectin suppressed responses to GABA of RDLbdI/V, RDLbd and RDLbdI/VA301S. The dieldrin resistant variant also showed reduced sensitivity to Ivermectin. This study of a highly abundant insect GABA receptor isoform will help the design of new insecticides. PMID:24823815

  9. Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes

    Science.gov (United States)

    Zellag, S.; Dehimi, L.; Asar, T.; Saadoune, A.; Fritah, A.; Özçelik, S.

    2018-01-01

    The effects of the TiO2 high-k insulator material on Au/n-GaAs/Ti/Au Schottky barrier diodes have been studied by means of the numerical simulation and experimental results at room temperature. The Atlas-Silvaco-TCAD numerical simulator has been used to explain the behavior of different physical phenomena of Schottky diode. The experimental values of ideality factor, barrier height, and series resistance have been determined by using the various techniques such as Cheung's method, forward bias ln I- V and reverse capacitance-voltage behaviors. The experimental ideality factor and barrier height values have been found to be 4.14 and 0.585 eV for Au/n-GaAs/Ti/Au Schottky barrier diode and 4.00 and 0.548 eV for that structure with 16 nm thick TiO2 film and 3.92, 0.556 eV with 100 nm thick TiO2 film. The diodes show a non-ideal current-voltage behavior that of the ideality factor so far from unity. The extraction of N ss interface distribution profile as a function of E c -E ss is made using forward-bias I- V measurement by considering the bias dependence of ideality factor, the effective barrier height, and series resistance for Schottky barrier diodes. The N ss calculated values with consideration of the series resistance are lower than the calculated ones without series resistance. The current-voltage results of diodes reveal an abnormal increase in leakage current with an increase in thickness of high-k interfacial insulator layer. However, the simulation agrees in general with the experimental results.

  10. Využítí kvasinkových kmenů při výrobě piva

    OpenAIRE

    Süss, Jan

    2015-01-01

    This final thesis is focused on topic of use the yeast strains in beer production. In first part of thesis is descripted brief overview of beer making process, its nutritional values, composition and also inputs needed for its production, namely malt, hops, water and yeast. Following part of thesis considers overall characteristics of yeast strains, their reproduction and their importance in food production industry. After general description the thesis is focused on characteristics of indivi...

  11. A Surface Formulation for Characteristic Modes of Material Bodies

    Science.gov (United States)

    1974-10-01

    42 CHAPTER 3 4: CHARACTERISTIC MODES - A SURFACE FORMULATION 3.1 Theoretical Development The treatment of characteristic modes for perfectly...cgs* i + y mp ein•£ (A6 V; 1 TP At • CA6 I --- 4 1 o#i ajk(X MPcoeo* + umpsin# ) Iim n p-l1 Tp -Ax sin#i + Ay co* ] i (A-7) A4 APPWOIX II fill I vIal

  12. Electrical transport properties of an isolated CdS microrope composed of twisted nanowires

    OpenAIRE

    Yu, Gui-Feng; Yu, Miao; Pan, Wei; Han, Wen-Peng; Yan, Xu; Zhang, Jun-Cheng; Zhang, Hong-Di; Long, Yun-Ze

    2015-01-01

    CdS is one of the important II-VI group semiconductors. In this paper, the electrical transport behavior of an individual CdS microrope composed of twisted nanowires is studied. It is found that the current?voltage (I-V) characteristics show two distinct power law regions from 360 down to 60?K. Space-charge-limited current (SCLC) theory is used to explain these temperature- and electric-field-dependent I-V curves. The I-V data can be well fitted by this theory above 100?K, and the correspondi...

  13. Modelling of dc characteristics for granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

  14. Modelling of dc characteristics for granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

  15. ANFIS-Based Modeling for Photovoltaic Characteristics Estimation

    Directory of Open Access Journals (Sweden)

    Ziqiang Bi

    2016-09-01

    Full Text Available Due to the high cost of photovoltaic (PV modules, an accurate performance estimation method is significantly valuable for studying the electrical characteristics of PV generation systems. Conventional analytical PV models are usually composed by nonlinear exponential functions and a good number of unknown parameters must be identified before using. In this paper, an adaptive-network-based fuzzy inference system (ANFIS based modeling method is proposed to predict the current-voltage characteristics of PV modules. The effectiveness of the proposed modeling method is evaluated through comparison with Villalva’s model, radial basis function neural networks (RBFNN based model and support vector regression (SVR based model. Simulation and experimental results confirm both the feasibility and the effectiveness of the proposed method.

  16. Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

    Science.gov (United States)

    Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

    2018-04-01

    In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

  17. Hlukové emise při výrobě a zpracování objemových krmiv

    OpenAIRE

    ZLOCH, Jan

    2016-01-01

    The main aim of this thesis is to determine noise levels at a certain distance from individual machines of haylage line and working place of operator. While the literary part of the thesis is mainly focused on current technology and a technique used in harvesting of roughage and familiarization with the problems of noise. Practical part of the thesis is focused on characteristics of observed haylage line, measurement of noise levels at a certain distance and in working place of operator with ...

  18. Field-aligned current density versus electric potential characteristics for magnetospheric flux tubes

    International Nuclear Information System (INIS)

    Lemaire, J.; Scherer, M.

    1983-01-01

    The field-aligned current density (Jsub(tot)) is a non-linear function of the applied potential difference (phi) between the ionosphere and the magnetosphere. This nonlinear function has been calculated for plasma boundary conditions typical in a dayside cusp magnetic flux tube. The J-characteristic of such a flux tube changes when the temperatures of the warm magnetospheric electrons and of the cold ionospheric electrons are modified; it changes also when the relative density of the warm plasma is modified; the presence of trapped secondary electrons changes also the J-characteristic. The partial currents contributed by the warm and cold electrons, and by warm and cold ions are illustrated. The dynamic characteristic of an electric circuit depends on the static characteristic of each component of the sytem: i.e. the resistive ionosphere, the return current region, and the region of particle precipitation whose field-aligned current/voltage characteristics have been studied in this article

  19. Temperature dependent electrical characteristics of Zn/ZnSe/n-GaAs/In structure

    Science.gov (United States)

    Sağlam, M.; Güzeldir, B.

    2016-04-01

    We have reported a study of the I-V characteristics of Zn/ZnSe/n-GaAs/In sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The main electrical parameters, such as ideality factor and zero-bias barrier height determined from the forward bias I-V characteristics were found strongly depend on temperature and when the increased, the n decreased with increasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. Furthermore, the series resistance have been calculated from the I-V measurements as a function of temperature dependent.

  20. A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

    International Nuclear Information System (INIS)

    Wang Hongmei; Xu Huaizhe; Zhang Yafei

    2006-01-01

    Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schroedinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current-voltage characteristics and current-voltage characteristics depend on the slope width

  1. Electrical interface characteristics (I-V), optical time of flight measurements, and the x-ray (20 keV) signal response of amorphous-selenium/crystalline-silicon heterojunction structures

    Science.gov (United States)

    Hunter, David M.; Ho, Chu An; Belev, George; De Crescenzo, Giovanni; Kasap, Safa O.; Yaffe, Martin J.

    2011-03-01

    We have investigated the dark current, optical TOF (time of flight) properties, and the X-ray response of amorphousselenium (a-Se)/crystalline-silicon (c-Si) heterostructures for application in digital radiography. The structures have been studied to determine if an x-ray generated electron signal, created in an a-Se layer, could be directly transferred to a c-Si based readout device such as a back-thinned CCD (charge coupled device). A simple first order band-theory of the structure indicates that x-ray generated electrons should transfer from the a-Se to the c-Si, while hole transfer from p-doped c-Si to the a-Se should be blocked, permitting a low dark signal as required. The structures we have tested have a thin metal bias electrode on the x-ray facing side of the a-Se which is deposited on the c-Si substrate. The heterostructures made with pure a-Se deposited on epitaxial p-doped (5×10 14 cm-3) c-Si exhibited very low dark current of 15 pA cm-2 at a negative bias field of 10 V μm-1 applied to the a-Se. The optical TOF (time of flight) measurements show that the applied bias drops almost entirely across the a-Se layer and that the a-Se hole and electron mobilities are within the range of commonly accepted values. The x-ray signal measurements demonstrate the structure has the expected x-ray quantum efficiency. We have made a back-thinned CCD coated with a-Se and although most areas of the device show a poor x-ray response, it does contain small regions which do work properly with the expected x-ray sensitivity. Improved understanding of the a-Se/c-Si interface and preparation methods should lead to properly functioning devices.

  2. Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

    International Nuclear Information System (INIS)

    Saha, A.R.; Dimitriu, C.B.; Horsfall, A.B.; Chattopadhyay, S.; Wright, N.G.; O'Neill, A.G.; Maiti, C.K.

    2006-01-01

    Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures. Physical parameters such as barrier height, ideality factor, series resistance and effective Richardson constant of a silicided Schottky diode were extracted from forward I-V characteristics and are subsequently used for the simulation of both forward and reverse I-V characteristics using a QM transport model in which the effects of interface state and bias dependent barrier reduction are incorporated. The present analysis indicates that the effects of barrier inhomogeneity caused by incomplete silicide formation at the junction and the interface states may change the conventional current transport process, leading to anomalous forward and reverse I-V characteristics for the Ni-silicided Schottky diode

  3. Nanofibrous p-n Junction and Its Rectifying Characteristics

    Directory of Open Access Journals (Sweden)

    Jian Fang

    2013-01-01

    Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

  4. Realization of an automatic set up to measure electrical characteristic of solid state detectors

    International Nuclear Information System (INIS)

    Manfredotti, C.; Crosetto, D.; Gabutti, A.; Gervino, G.; Varesio, R.

    1986-01-01

    An automatic set-up is described to study electrical properties of silicon detectors for nuclear research. Particularly, I-V characteristics from silicon junction prototype detectors and amorphous samples to test the data acquisition system, are presented. This set-up joins a low cost to good versatility that makes it very useful in wide application ranges in silicon detector electrical characterization

  5. The experimental research of the electric characteristics of discharge in the quasi-steady plasma accelerator with the longitudinal magnetic field

    International Nuclear Information System (INIS)

    Kozlov, A.N.; Klimov, N.S.; Moskacheva, A.A.; Podkovyrov, V.L.; Drukarenko, S.P.

    2009-01-01

    Installation of the coaxial quasi-steady high-current one-stage plasma accelerator with a longitudinal magnetic field is created. The lead experiments have shown an opportunity of realization of the discharges, formation of the ionization front and generation of the plasma streams at the presence of a longitudinal field in the accelerator channel. The current-voltage characteristics of the discharge at the presence and absence of a longitudinal field are measured. It is established that a weak longitudinal field does not render the appreciable influence on the integrated characteristics of discharge in the accelerator with the rod anode in an ion current transport regime

  6. EXPERIMENTAL ANALYSIS OF THE CHARACTERISTIC PERFORMANCE OF STANDALONE PHOTOVOLTAIC SYSTEM

    OpenAIRE

    Birendra Kishore; Anirban Nandy*; O.P. Pandey

    2016-01-01

    This paper demonstrates an insight solar PV Stand Alone system which is a practical model with a halogen light source. At different situations the performance of solar PV cells are analyzed. The system produces power with depending on the change in halogen light intensity & temperature. A theoretical & experimental analysis of the PV cell can be achieved. In this paper the I-V & P-V characteristic of the solar photovoltaic cells with changes in temperature and isolation have been showed. With...

  7. Trofiske skift og fysiske faktorer i væksten hos Færøske torsk (Gadus morhua) undersøgt ved brug af stabile isotoper

    DEFF Research Database (Denmark)

    Munk-Nielsen, Jens; Christensen, Jens Tang; Grønkjær, P.

    Projektets formål er at forstå variationen i vækst hos torsk (Gadus Morhua) ved brug af otolither (øresten), og sammenhængen med fysiske faktorer, såsom havstrømme, hav temperatur, osv på den Færøske shelf. Dette undersøges ved hjælp af, 1) en otolith vækst kronologi som dækker mere end 60 år (1948...... en mindre amplitude i variationen af ringbredde end direkte vækst målinger. Over hele vækstkronologien ses en negativ udvikling i væksten hos torsk, dog afbrudt af kortere perioder med positiv vækst. De stabile isotop prøver udtages fra hele otolitter fra 5 år gamle torsk. Fra protein delen af...... omgivelser torsken har oplevet, især den omgivende temperatur. Karbon signalet fra den uorganiske del af otolitten vil blive sammenlignet med værdierne i protein delen. De stabile isotop-værdier, samt vækst data vil blive analyseret for at se sammenhængen mellem klimaet og væksten hos torsk. Både lokalt, med...

  8. In situ diagnostic of water distribution in thickness direction of MEA by neutron imaging. Focused on characteristics of water distribution in gas diffusion layer

    International Nuclear Information System (INIS)

    Tasaki, Yutaka; Ichikawa, Yasushi; Kobo, Norio; Shinohara, Kazuhiko; Boillat, Pierre; Kramer, Denis; Scherer, Gunther G.; Lehmann, Eberhard H.

    2008-01-01

    The mass transfer characteristics of gas diffusion layer (GDL) are closely related to cell performance in PEFC. In this study, In situ diagnostic of water distribution in thickness direction of MEA by Neutron Imaging has been carried out for three MEAs with different GDLs on cathode side as well as I-V characteristics. It was confirmed that this method is useful for analyzing water distribution in thickness direction of MEA. The relationship between I-V characteristics and liquid water distribution has been studied. (author)

  9. Tagahoovi elluäratamine : TTÜ Kuressaare kolledži väikelaevaehituse kompetentsikeskus = Awakening a backyard to new life : The ship model testing basin for the Tallinn University of Technology`s Small Craft Competence Centre in Kuressaare / Hanne

    Index Scriptorium Estoniae

    Koppel, Hannes

    2014-01-01

    TTÜ Kuressaare kolledži väikelaevaehituse kompetentsikeskuse katsebasseinihoone arhitektuurist. Arhitektid: Aet Ader, Mari Hunt, Kadri Klementi, Kalle Komissarov, Lembit-Laur Stöör. Projekt: 2011-2014. Valmis: 2014

  10. DESARROLLO DE UN SISTEMA DE CONTROL PARA LA CAPTURA Y MEDICIÓN EXPERIMENTAL DE LA EFICIENCIA Y CURVA CARACTERÍSTICA I-V EN TIEMPO REAL DE UN SISTEMA FOTOVOLTAICO UTILIZANDO LABVIEW® Y ARDUINO

    Directory of Open Access Journals (Sweden)

    Juan Pablo Vargas Bautista

    2015-07-01

    Full Text Available En el presente artículo se presenta un sistema de control para la visualización en tiempo real de datos experimentales de la curva de eficiencia y de la curva característica I-V (corriente versus voltaje de un panel fotovoltaico (FV SUNTECH-STP030-12. El sistema está compuesto de un programa desarrollado en LabView® y un circuito electrónico de captura y procesamiento de datos.  Se utilizó un microprocesador Arduino UNO R3 para la interface entre los datos del panel FV y el programa en LabView®.  Los resultados muestran que es posible utilizar microprocesadores de bajo costo con suficiente capacidad de procesamiento en tiempo real de la información obtenida de los paneles FV.

  11. Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device characteristics

    Science.gov (United States)

    Kimber, Robin G. E.; Wright, Edward N.; O'Kane, Simon E. J.; Walker, Alison B.; Blakesley, James C.

    2012-12-01

    Measured mobility and current-voltage characteristics of single layer and photovoltaic (PV) devices composed of poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4-phenylene)diamine} (PFB) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC) approach. Our aim is to show how to avoid the uncertainties common in electrical transport models arising from the need to fit a large number of parameters when little information is available, for example, a single current-voltage curve. Here, simulation parameters are derived from a series of measurements using a self-consistent “building-blocks” approach, starting from data on the simplest systems. We found that site energies show disorder and that correlations in the site energies and a distribution of deep traps must be included in order to reproduce measured charge mobility-field curves at low charge densities in bulk PFB and F8BT. The parameter set from the mobility-field curves reproduces the unipolar current in single layers of PFB and F8BT and allows us to deduce charge injection barriers. Finally, by combining these disorder descriptions and injection barriers with an optical model, the external quantum efficiency and current densities of blend and bilayer organic PV devices can be successfully reproduced across a voltage range encompassing reverse and forward bias, with the recombination rate the only parameter to be fitted, found to be 1×107 s-1. These findings demonstrate an approach that removes some of the arbitrariness present in transport models of organic devices, which validates the KMC as an accurate description of organic optoelectronic systems, and provides information on the microscopic origins of the device behavior.

  12. Hram viden i v notshi... / Jevgeni Ashihmin

    Index Scriptorium Estoniae

    Ashihmin, Jevgeni

    2006-01-01

    Narva Ülestõusmise kirik (arhitekt Paul Alisch) saab 110. aastapäevaks fassaadi valgustuse. Projekti autorid Peterburi firmast "Tehnosvet". Kirikule aastapäevaks kingitud keraamilisest pannoost, ikoonidest

  13. V tesnote i v obide / Jekaterina Rodina

    Index Scriptorium Estoniae

    Rodina, Jekaterina

    2005-01-01

    EA Reng arhitekti Ilmar Jalase koostatud detailplaneering näeb ette Tallinna Õismäe elamurajoonis Paldiski mnt. 227 / Järveotsa tee 2 vahele 24, 14- ja 9-korruseliste hoonete ehitamist. Elanike protest peatas 24-korruselise elumaja planeeringu kinnitamise

  14. Golossa optom i v roznitsu / Josef Kats

    Index Scriptorium Estoniae

    Kats, Josef, 1977-

    2005-01-01

    Eelhääletuse käigus ilmsiks tulnud katsed hääli kokku osta, ei tohi valimiste ega elektroonilise hääletamise tulemusi kahtluse alla seada, justiitsminister Rein Langi esinemisest valitsuse pressikonverentsil

  15. Rousseau i våre hjerter

    Directory of Open Access Journals (Sweden)

    Lars Løvlie

    2013-09-01

    Full Text Available This essay broaches pedagogical key themes in Rousseau’s writings, primarily sourced from Émile, a book that 250 years after its first publication offers up a strikingly relevant critique of the current neo-liberal politics of schooling in the Western world. Rousseau was a keen observer of human folly, a sharp critic of Enlightenment culture, and an imaginative author with an acute sense of the vagaries of mind and feeling. I recount how he treats feelings, particularly the inner voice of conscience, as a core element in education. His idea of “negative pedagogy” is a lasting contribution to educational thinking in general and highly relevant for our discussion today about self-regulation and discipline in education. Rousseau’s idea about authenticity leads directly to the question of individual character and the relation between self-love and amour-propre. Here we are presented to a positive pedagogy, which is to foster the first and to foil the second. After having touched the conflict between theory and practice in Rousseau’s own life, I observe that the woman in Émile’s life, Sophie, comes forth as naturally healthy person, fit to face society’s temptations, while Émile in comparison must be protected from its harms by his well-meaning tutor until he turns 15. In a longer section I present the pedagogical paradox, which says that you cannot force a child to be independent. Rousseau interestingly disregards the paradox, which seems to cast doubt on his reputation as a radical reformer of modern pedagogy.

  16. Rousseau i våre hjerter

    Directory of Open Access Journals (Sweden)

    Lars Løvlie

    2013-09-01

    Full Text Available This essay broaches pedagogical key themes in Rousseau’s writings, primarily sourced from Émile, a book that 250 years after its first publication offers up a strikingly relevant critique of the current neo-liberal politics of schooling in the Western world. Rousseau was a keen observer of human folly, a sharp critic of Enlightenment culture, and an imaginative author with an acute sense of the vagaries of mind and feeling. I recount how he treats feelings, particularly the inner voice of conscience, as a core element in education. His idea of “negative pedagogy” is a lasting contribution to educational thinking in general and highly relevant for our discussion today about self-regulation and discipline in education. Rousseau’s idea about authenticity leads directly to the question of individual character and the relation between self-love and amour-propre. Here we are presented to a positive pedagogy, which is to foster the first and to foil the second. After having touched the conflict between theory and practice in Rousseau’s own life, I observe that the woman in Émile’s life, Sophie, comes forth as naturally healthy person, fit to face society’s temptations, while Émile in comparison must be protected from its harms by his well-meaning tutor until he turns 15. In a longer section I present the pedagogical paradox, which says that you cannot force a child to be independent. Rousseau interestingly disregards the paradox, which seems to cast doubt on his reputation as a radical reformer of modern pedagogy.  

  17. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, A., E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Coelho, S.M.M.; Auret, F.D.; Mtangi, W. [Department of Physics, University of Pretoria, 0002 (South Africa); Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Nel, J.M.; Diale, M. [Department of Physics, University of Pretoria, 0002 (South Africa)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. Black-Right-Pointing-Pointer The variation of the electrical and structural properties can be due to effects phase transformation during annealing. Black-Right-Pointing-Pointer Thermal stability of these diodes is maintained up to 500 Degree-Sign C anneal. Black-Right-Pointing-Pointer SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 Degree-Sign C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C.

  18. Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

    Science.gov (United States)

    Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2018-03-14

    Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

  19. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    OpenAIRE

    H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

    2014-01-01

    The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

  20. Characteristics of Linear MHD Generators with One or a Few Loads

    International Nuclear Information System (INIS)

    Witalis, E.A.

    1966-02-01

    The theoretical performance of linear series segmented MHD generators with finite size electrodes and one or a few identical external loads is investigated. The analysis is an extension of our conformal mapping investigation previously reported. The electrical characteristics are evaluated as functions of the segmentation degree, the Hall parameter and the relative position of short-circuited electrodes. Special consideration is given to the influence of staggering the electrodes, i. e. shifting the relative positions of short-circuited electrodes. General electrical terminal characteristics, i. e. the full current-voltage relation, can not be obtained by the exact analytical method, which is applicable only to so-called design load conditions or infinitely long MHD channels. However, it is shown how the general properties can be explained qualitatively and calculated approximately by describing off-design modes of operation in terms of a fictitious 'effective' number of external loads

  1. Characteristics of Linear MHD Generators with One or a Few Loads

    Energy Technology Data Exchange (ETDEWEB)

    Witalis, E A

    1966-02-15

    The theoretical performance of linear series segmented MHD generators with finite size electrodes and one or a few identical external loads is investigated. The analysis is an extension of our conformal mapping investigation previously reported. The electrical characteristics are evaluated as functions of the segmentation degree, the Hall parameter and the relative position of short-circuited electrodes. Special consideration is given to the influence of staggering the electrodes, i. e. shifting the relative positions of short-circuited electrodes. General electrical terminal characteristics, i. e. the full current-voltage relation, can not be obtained by the exact analytical method, which is applicable only to so-called design load conditions or infinitely long MHD channels. However, it is shown how the general properties can be explained qualitatively and calculated approximately by describing off-design modes of operation in terms of a fictitious 'effective' number of external loads.

  2. Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

    Science.gov (United States)

    Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

    2018-05-01

    We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

  3. Investigation of spectral characteristics of tunnel photodiodes based on DLC nanofilms

    Science.gov (United States)

    Akchurin, Garif G.; Aban'shin, Nickolay P.; Avetisyan, Yuri A.; Akchurin, Georgy G.; Kochubey, Vyacheslav I.; Yakunin, Alexander N.

    2018-04-01

    The tunneling photo effect has been studied in a microdiode with an electrostatic field localized at an emitter based on a nanosized DLC structure. It is established the photocurrent, when the carbon nanoemitter is exposed by laser and tunable low-coherent radiation in the spectral range from UV to near IR with photons of low energy (below work function). A linear dependence of the photocurrent on the level of optical power in the range of micro- and milliwatt power is established. The effect of saturation of the current-voltage characteristics of the tunnel photocurrent associated with a finite concentration of non-equilibrium photoelectrons is observed. The observed spectral Watt-Amper characteristics can be adequately interpreted using a modified Fowler-Nordheim equation for non-equilibrium photoelectrons.

  4. Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

    Science.gov (United States)

    Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

    2016-11-25

    We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

  5. Aluminum anode for aluminum-air battery - Part II: Influence of In addition on the electrochemical characteristics of Al-Zn alloy in alkaline solution

    Science.gov (United States)

    Park, In-Jun; Choi, Seok-Ryul; Kim, Jung-Gu

    2017-07-01

    Effects of Zn and In additions on the aluminum anode for Al-air battery in alkaline solution are examined by the self-corrosion rate, cell voltage, current-voltage characteristics, anodic polarization, discharge performance and AC impedance measurements. The passivation behavior of Zn-added anode during anodic polarization decreases the discharge performance of Al-air battery. The addition of In to Al-Zn anode reduces the formation of Zn passivation film by repeated adsorption and desorption behavior of In ion onto anode surface. The attenuated Zn passive layer by In ion attack leads to the improvement of discharge performance of Al-air battery.

  6. Transport characteristic in current-in-plane (CIP) geometry of La0.8Sr0.2MnO3/Co heterostructure

    International Nuclear Information System (INIS)

    Jin, K.X.; Zhao, S.G.; Chen, C.L.

    2009-01-01

    The thousand-fold change in the resistance with increase in temperature has been observed in the current-in-plane (CIP) geometry of the La 0.8 Sr 0.2 MnO 3 /Co heterostructure prepared using a sol-gel method. The CIP geometry below 300 K exhibits the variable-range hopping (VRH) mechanism. The current-voltage characteristic is nonlinear and the fitting shows that the exponent n decreases with increasing the temperature, which is attributed to the lattice mismatch between the LSMO film and the Co substrate.

  7. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Zotova, N V; Karandashev, S A; Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru; Remennyy, M A; Rybal' chenko, A Yu; Stus' , N M [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

    2011-04-15

    Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.

  8. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

    International Nuclear Information System (INIS)

    Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyy, M. A.; Rybal’chenko, A. Yu.; Stus’, N. M.

    2011-01-01

    Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.

  9. Phonon-assisted tunnelling in electrical conductivity of individual carbon nanotubes and networks ones

    Energy Technology Data Exchange (ETDEWEB)

    Pipinys, P. [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: pipiniai@takas.lt; Kiveris, A. [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: studsk@vpu.lt

    2008-10-01

    Current-voltage (I-V) characteristics of single-wall carbon nanotubes (SWCNT), measured in the low temperatures by Tang et al. [Science 292 (2001) 2462] and transparent SWCNT networks presented by Jaiswal et al. [J. Phys.: Condens. Matter 19 (2007) 446006], are reinterpreted in the framework of phonon-assisted tunnelling theory as a free charge carriers generation mechanism in the strong electrical field. The good fit of the temperature-dependent I-V data in low temperature region (i.e., T<25 K) has been achieved using the phonons of energy <1 meV.

  10. Phonon-assisted tunnelling in electrical conductivity of individual carbon nanotubes and networks ones

    International Nuclear Information System (INIS)

    Pipinys, P.; Kiveris, A.

    2008-01-01

    Current-voltage (I-V) characteristics of single-wall carbon nanotubes (SWCNT), measured in the low temperatures by Tang et al. [Science 292 (2001) 2462] and transparent SWCNT networks presented by Jaiswal et al. [J. Phys.: Condens. Matter 19 (2007) 446006], are reinterpreted in the framework of phonon-assisted tunnelling theory as a free charge carriers generation mechanism in the strong electrical field. The good fit of the temperature-dependent I-V data in low temperature region (i.e., T<25 K) has been achieved using the phonons of energy <1 meV

  11. Observation of spin-polarized electron transport in Alq3 by using a low work function metal

    Science.gov (United States)

    Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

    2012-09-01

    We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

  12. Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

    Science.gov (United States)

    Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

    2017-12-01

    Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

  13. Modelling of electric characteristics of 150-watt peak solar panel using Boltzmann sigmoid function under various temperature and irradiance

    Science.gov (United States)

    Sapteka, A. A. N. G.; Narottama, A. A. N. M.; Winarta, A.; Amerta Yasa, K.; Priambodo, P. S.; Putra, N.

    2018-01-01

    Solar energy utilized with solar panel is a renewable energy that needs to be studied further. The site nearest to the equator, it is not surprising, receives the highest solar energy. In this paper, a modelling of electrical characteristics of 150-Watt peak solar panels using Boltzmann sigmoid function under various temperature and irradiance is reported. Current, voltage, temperature and irradiance data in Denpasar, a city located at just south of equator, was collected. Solar power meter is used to measure irradiance level, meanwhile digital thermometer is used to measure temperature of front and back panels. Short circuit current and open circuit voltage data was also collected at different temperature and irradiance level. Statistically, the electrical characteristics of 150-Watt peak solar panel can be modelled using Boltzmann sigmoid function with good fit. Therefore, it can be concluded that Boltzmann sigmoid function might be used to determine current and voltage characteristics of 150-Watt peak solar panel under various temperature and irradiance.

  14. Využití metodiky RUP při vývoji webové aplikace menšího rozsahu v prostředí PHP 5

    OpenAIRE

    Albrecht, Jakub

    2008-01-01

    Práce se snaží zhodnotit možnosti využití metodiky RUP při realizaci projektu vývoje konkrétního informačního systému s danými parametry. Těmito parametry jsou malý rozsah, webová platforma a technologické prostředí PHP 5. V úvodu se práce zaobírá úlohou metodik při vývoji software, následuje představení metodiky RUP. Dále je probírána metodická podpora specifických charakteristik projektů. Vlastním přínosem práce je vytvoření vlastní instance metodiky RUP vhodné pro definovaný projekt a na z...

  15. Uranium metalla-allenes with carbene imido R_2C=U"I"V=NR' units (R=Ph_2PNSiMe_3; R'=CPh_3): alkali-metal-mediated push-pull effects with an amido auxiliary

    International Nuclear Information System (INIS)

    Lu, Erli; Tuna, Floriana; Kaltsoyannis, Nikolas; Liddle, Stephen T.; Lewis, William

    2016-01-01

    We report uranium(IV)-carbene-imido-amide metalla-allene complexes [U(BIPM"T"M"S)(NCPh_3)(NHCPh_3)(M)] (BIPM"T"M"S=C(PPh_2NSiMe_3)_2; M=Li or K) that can be described as R_2C=U=NR' push-pull metalla-allene units, as organometallic counterparts of the well-known push-pull organic allenes. The solid-state structures reveal that the R_2C=U=NR' units adopt highly unusual cis-arrangements, which are also reproduced by gas-phase theoretical studies conducted without the alkali metals to remove their potential structure-directing roles. Computational studies confirm the double-bond nature of the U=NR' and U=CR_2 interactions, the latter increasingly attenuated by potassium then lithium when compared to the hypothetical alkali-metal-free anion. Combined experimental and theoretical data show that the push-pull effect induced by the alkali metal cations and amide auxiliary gives a fundamental and tunable structural influence over the C=U"I"V=N units. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Electrical transport properties of an isolated CdS microrope composed of twisted nanowires.

    Science.gov (United States)

    Yu, Gui-Feng; Yu, Miao; Pan, Wei; Han, Wen-Peng; Yan, Xu; Zhang, Jun-Cheng; Zhang, Hong-Di; Long, Yun-Ze

    2015-01-01

    CdS is one of the important II-VI group semiconductors. In this paper, the electrical transport behavior of an individual CdS microrope composed of twisted nanowires is studied. It is found that the current-voltage (I-V) characteristics show two distinct power law regions from 360 down to 60 K. Space-charge-limited current (SCLC) theory is used to explain these temperature- and electric-field-dependent I-V curves. The I-V data can be well fitted by this theory above 100 K, and the corresponding carrier mobility, trap energy, and trap concentration are also obtained. However, the I-V data exhibit some features of the Coulomb blockade effect below 80 K.

  17. Electrical transport properties of an isolated CdS microrope composed of twisted nanowires

    Science.gov (United States)

    Yu, Gui-Feng; Yu, Miao; Pan, Wei; Han, Wen-Peng; Yan, Xu; Zhang, Jun-Cheng; Zhang, Hong-Di; Long, Yun-Ze

    2015-01-01

    CdS is one of the important II-VI group semiconductors. In this paper, the electrical transport behavior of an individual CdS microrope composed of twisted nanowires is studied. It is found that the current-voltage ( I- V) characteristics show two distinct power law regions from 360 down to 60 K. Space-charge-limited current (SCLC) theory is used to explain these temperature- and electric-field-dependent I-V curves. The I-V data can be well fitted by this theory above 100 K, and the corresponding carrier mobility, trap energy, and trap concentration are also obtained. However, the I-V data exhibit some features of the Coulomb blockade effect below 80 K.

  18. Ultralarge area MOS tunnel devices for electron emission

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  19. The addition of tramadol to the standard of i.v. acetaminophen and morphine infusion for postoperative analgesia in neonates offers no clinical benefit: a randomized placebo-controlled trial.

    Science.gov (United States)

    Olischar, Monika; Palmer, Greta M; Orsini, Francesca; Davidson, Andrew J; Perkins, Elizabeth J; Lee, Katherine J; Everest, Neil J; Cranswick, Noel E; Hunt, Rod W

    2014-11-01

    Tramadol is used following neonatal cardiac and general surgery. However, its ability to opioid-spare or facilitate earlier extubation in postoperative neonates is unquantified. This randomized placebo-controlled trial aimed to assess whether tramadol's addition to standard analgesia resulted in earlier extubation or reduced analgesic/sedative requirements in postsurgical neonates. Neonates born ≥32 weeks postmenstrual age received either tramadol [T] 2 mg·kg(-1) or placebo [P] 6-hourly for up to 5 days postthoracoabdominal surgery in addition to morphine (commenced at 20 mcg·kg(-1) ·h(-1)) and 6-hourly i.v. acetaminophen. Time to extubation, morphine and midazolam amounts, hourly pain scores, and seizure activity were compared using an intention-to-treat and per-protocol analysis. Seventy-one neonates participated. Median survival time to extubation was similar between the groups (T 67 h [95% CI 51, 84] vs P 52 h [95%CI 43, 65]; P = 0.4), and similar numbers were extubated by 96 h (T 69% vs P 77%; difference -8%, 95%CI -28, 13%). Morphine and midazolam exposure was similar, with low pain scores in both groups (mean percentage of time with a pain score >5/20 during the 5 days: T 13% vs P 11%, difference in means 2.8 [95% CI -1.8, 7.6], P = 0.20). Most participants had normal cranial ultrasounds (T 86% vs P 86%); no seizures occurred clinically or electroencephalographically. Tramadol's addition to standard analgesia in this small group of postsurgical neonates did not appear to have any positive effect on time to extubation, morphine or midazolam exposure, or pain scores. This questions the benefit of tramadol for postsurgical neonates. Importantly, no seizures occurred in these ill neonates who may potentially be at greater risk of tramadol toxicity compared with adults. © 2014 John Wiley & Sons Ltd.

  20. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  1. Experimental Study of Hydroxy Gas (HHO) Production with Variation in Current, Voltage and Electrolyte Concentration

    Science.gov (United States)

    Alam, Noor; Pandey, K. M.

    2017-08-01

    In this paper, work has been carried out experimentally for the investigation of the effects of variation incurrent, voltage, temperature, chemical concentration and reaction time on the amount of hydroxy gas produced. Further effects on the overall electrolysis efficiency of advance alkaline water is also studied. The hydroxy gas (HHO) has been produced experimentally by the electrolysis of alkaline water with parallel plate electrode of 316L-grade stainless steel. The electrode has been selected on the basis of corrosion resistance and inertness with respect to electrolyte (KOH). The process used for the production of HHO is conventional as compared to the other production processes because of reduced energy consumption, less maintenance and low setup cost. From the experimental results, it has been observed that with increase in voltage, temperature and electrolyte concentration of alkaline solution, the production of hydroxy gas has increased about 30 to 40% with reduction in electrical energy consumption.

  2. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    International Nuclear Information System (INIS)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J.; Dyk, E.E. van

    2009-01-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  3. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    Energy Technology Data Exchange (ETDEWEB)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  4. Microscopic theory of the current-voltage relationship across a normal-superconducting interface

    International Nuclear Information System (INIS)

    Kraehenbuehl, Y.; Watts-Tobin, R.J.

    1979-01-01

    Measurements by Pippard et al. have shown the existence of an extra resistance due to the penetration of an electrical potential into a superconductor. Previous theories of this effect are unable to explain the full temperature dependence of the extra resistance because they use oversimplified models of the normal--superconducting interface. We show that the microscopic theory for dirty superconductors leads to a good agreement with experiment over the whole temperature range

  5. Thermal instability and current-voltage scaling in superconducting fault current limiters

    Energy Technology Data Exchange (ETDEWEB)

    Zeimetz, B [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Tadinada, K [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Eves, D E [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Coombs, T A [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Campbell, A M [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom)

    2004-04-01

    We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law.

  6. Luminescence evolution from alumina ceramic surface before flashover under direct and alternating current voltage in vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Su, Guo-Qiang; Wang, Yi-Bo; Song, Bai-Peng; Mu, Hai-Bao, E-mail: haibaomu@xjtu.edu.cn, E-mail: gjzhang@xjtu.edu.cn; Zhang, Guan-Jun, E-mail: haibaomu@xjtu.edu.cn, E-mail: gjzhang@xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Li, Feng; Wang, Meng [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China)

    2016-06-15

    The luminescence evolution phenomena from alumina ceramic surface in vacuum under high voltage of direct and alternating current are reported, with the voltage covering a large range from far below to close to the flashover voltage. Its time resolved and spatial distributed behaviors are examined by a photon counting system and an electron-multiplying charge-coupled device (EMCCD) together with a digital camera, respectively. The luminescence before flashover exhibits two stages as voltage increasing, i.e., under a relative low voltage (Stage A), the luminescence is ascribed to radiative recombination of hetero-charges injected into the sample surface layer by Schottky effect; under a higher voltage (Stage B), a stable secondary electron emission process, resulting from the Fowler-Nordheim emission at the cathode triple junction (CTJ), is responsible for the luminescence. Spectrum analysis implies that inner secondary electrons within the surface layer of alumina generated during the SSEE process also participate in the luminescence of Stage B. A comprehensive interpretation of the flashover process is formulated, which might promote a better understanding of flashover issue in vacuum.

  7. Circuitry for monitoring a high direct current voltage supply for an ionization chamber

    International Nuclear Information System (INIS)

    1981-01-01

    An arrangement to measure the voltage of the supply and a switching means controlled by this is described. The voltage measurer consists of first and second signal coupling means, the input of the second (connected to the voltage supply) is connected in series with the output of the first. An ionization chamber with this circuitry may be used to monitor the radiation output of a particle accelerator more accurately. Faulty measurements of the dose output, caused by voltages in the earth circuit, are avoided. (U.K.)

  8. Implementation of an active instructional design for teaching the concepts of current, voltage and resistance

    Science.gov (United States)

    Orlaineta-Agüero, S.; Del Sol-Fernández, S.; Sánchez-Guzmán, D.; García-Salcedo, R.

    2017-01-01

    In the present work we show the implementation of a learning sequence based on an active learning methodology for teaching Physics, this proposal tends to promote a better learning in high school students with the use of a comic book and it combines the use of different low-cost experimental activities for teaching the electrical concepts of Current, Resistance and Voltage. We consider that this kind of strategy can be easily extrapolated to higher-education levels like Engineering-college/university level and other disciplines of Science. To evaluate this proposal, we used some conceptual questions from the Electric Circuits Concept Evaluation survey developed by Sokoloff and the results from this survey was analysed with the Normalized Conceptual Gain proposed by Hake and the Concentration Factor that was proposed by Bao and Redish, to identify the effectiveness of the methodology and the models that the students presented after and before the instruction, respectively. We found that this methodology was more effective than only the implementation of traditional lectures, we consider that these results cannot be generalized but gave us the opportunity to view many important approaches in Physics Education; finally, we will continue to apply the same experiment with more students, in the same and upper levels of education, to confirm and validate the effectiveness of this methodology proposal.

  9. Pulsed Current-Voltage-Induced Perturbations of a Premixed Propane/Air Flame

    Directory of Open Access Journals (Sweden)

    Jacob. B. Schmidt

    2011-01-01

    Full Text Available The effect of millisecond wide sub-breakdown pulsed voltage-current induced flow perturbation has been measured in premixed laminar atmospheric pressure propane/air flame. The flame equivalence ratios were varied from 0.8 to 1.2 with the flow speeds near 1.1 meter/second. Spatio-temporal flame structure changes were observed through collection of CH (A-X and OH (A-X chemiluminescence and simultaneous spontaneous Raman scattering from N2. This optical collection scheme allows us to obtain a strong correlation between the measured gas temperature and the chemiluminescence intensity, verifying that chemiluminescence images provide accurate measurements of flame reaction zone structure modifications. The experimental results suggest that the flame perturbation is caused by ionic wind originating only from the radial positive space-charge distribution in/near the cathode fall. A net momentum transfer acts along the annular space discharge distribution in the reaction zone at or near the cathode fall which modifies the flow field near the cathodic burner head. This radially inward directed body force appears to enhance mixing similar to a swirl induced modification of the flame structure. The flame fluidic response exhibit a strong dependence on the voltage pulse width ≤10 millisecond.

  10. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

  11. Subcell Light Current-Voltage Characterization of Irradiated Multijunction Solar Cell

    Directory of Open Access Journals (Sweden)

    Walker Don

    2017-01-01

    Full Text Available The degradation of individual subcell J-V parameters, such as short circuit current, open circuit voltage, fill factor, and power of a GaInP/GaInAs/Ge triple junction solar cell by 1 MeV electrons were derived utilizing the spectral reciprocity relation between electroluminescence and external quantum efficiency. After exposure to a fluence of 1 × 1015 1 MeV electrons, it was observed that up to 67% of the voltage loss is from the middle, GaInAs subcell. Also, the dark saturation current of the Ge and GaInAs subcells increased but a simultaneous decrease in ideality factor caused a reduction of the open circuit voltage. The reduced ideality factor further indicates a change in the primary recombination mechanism.

  12. Python Scripts for Automation of Current-Voltage Testing of Semiconductor Devices (FY17)

    Science.gov (United States)

    2017-01-01

    investment required by the user with manual operation, only a fraction of the total devices fabricated on a sample are actually tested. In this...only moves the stage itself in 3 dimensions. It does not control the probes or stage rotation. It is important to note that the user must first attempt...measurements using the 4155C and the manual probe station. This script bypasses the original front panel operation of the 4155C and allows the user to set

  13. Hybrid nanocomposite based on cellulose and tin oxide: growth, structure, tensile and electrical characteristics

    International Nuclear Information System (INIS)

    Mahadeva, Suresha K; Kim, Jaehwan

    2011-01-01

    A highly flexible nanocomposite was developed by coating a regenerated cellulose film with a thin layer of tin oxide (SnO 2 ) by liquid-phase deposition. Tin oxide was crystallized in solution and formed nanocrystal coatings on regenerated cellulose. The nanocrystalline layers did not exfoliate from cellulose. Transmission electron microscopy and energy dispersive x-ray spectroscopy suggest that SnO 2 was not only deposited over the cellulose surface, but also nucleated and grew inside the cellulose film. Current-voltage characteristics of the nanocomposite revealed that its electrical resistivity decreases with deposition time, with the lowest value obtained for 24 h of deposition. The cellulose-SnO 2 hybrid nanocomposite can be used for biodegradable and disposable chemical, humidity and biosensors.

  14. Prediction of multi performance characteristics of wire EDM process using grey ANFIS

    Science.gov (United States)

    Kumanan, Somasundaram; Nair, Anish

    2017-09-01

    Super alloys are used to fabricate components in ultra-supercritical power plants. These hard to machine materials are processed using non-traditional machining methods like Wire cut electrical discharge machining and needs attention. This paper details about multi performance optimization of wire EDM process using Grey ANFIS. Experiments are designed to establish the performance characteristics of wire EDM such as surface roughness, material removal rate, wire wear rate and geometric tolerances. The control parameters are pulse on time, pulse off time, current, voltage, flushing pressure, wire tension, table feed and wire speed. Grey relational analysis is employed to optimise the multi objectives. Analysis of variance of the grey grades is used to identify the critical parameters. A regression model is developed and used to generate datasets for the training of proposed adaptive neuro fuzzy inference system. The developed prediction model is tested for its prediction ability.

  15. Methods for the numerical calculation of the plasma potential from measured Langmuir probe characteristics

    International Nuclear Information System (INIS)

    Seifert, W.; Johanning, D.; Bankov, N.

    1986-01-01

    In a previous paper the results of the Langmuir probe experiment carried out on board of two INTERKOSMOS satellites have been described. The experiences have shown that the usage of high quality algorithms for analyzing the current-voltage-characteristics is necessary to yield real physical parameters. The key problem is the determination of the plasma potential. This paper reviews the different methods to determine the plasma potential especially under the circumstances of computer application. The test of the well developed methods shows, that for the evaluation of the applied methods a number of different factors, discussed in the following sections of this paper, has to be taken into account. The used test data are model values or real measurements obtained by the satellite missions IK-10, IK-18 and BULGARIA-1300. The computer procedures have been realized as FORTRAN-subroutines for the BESM 6 and ES 1040. (author)

  16. Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure

    Directory of Open Access Journals (Sweden)

    A Hajibadali

    2014-11-01

    Full Text Available In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC emission. The parameters extracted from I-V characteristics were also calculated.

  17. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Science.gov (United States)

    Campbell, I. H.; Davids, P. S.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1998-04-01

    We present device model calculations of the current-voltage (I-V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I-V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I-V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited.

  18. Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Altin, E. [Inonu University, Scientific and Technological Research Center, Malatya (Turkey); Anadolu University, Department of Physics, Eskisehir (Turkey); Hostut, M. [Akdeniz University, Department of Secondary Education of Science and Maths., Division of Physics Education, Antalya (Turkey); Ergun, Y. [Anadolu University, Department of Physics, Eskisehir (Turkey)

    2011-12-15

    In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using Arrhenius plots at different voltages. It is found that the activation energy decreased with increasing electric field. This result is evaluated using a barrier lowering effect which is a combination of geometrical and Poole-Frenkel effects. Measured dark current density-voltage (J-V) characteristics compared with the Levine model, 3D carrier drift model and the emission capture model. The best agreement with the experimental results of dark current densities is obtained by the Levine model. (orig.)

  19. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  20. Current–voltage characteristics of manganite–titanite perovskite junctions

    Directory of Open Access Journals (Sweden)

    Benedikt Ifland

    2015-07-01

    Full Text Available After a general introduction into the Shockley theory of current voltage (J–V characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1−yNbyO3, y = 0.002 and p-doped Pr1−xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface.

  1. Characteristics of VCSELs and VCSEL arrays for optical data links

    Science.gov (United States)

    Gaw, Craig A.; Jiang, Wenbin; Lebby, Michael S.; Kiely, Philip A.; Claisse, Paul R.

    1997-05-01

    High performance, low cost, and highly reliable vertical cavity surface emitting lasers (VCSELs) have been developed and are currently being used in both parallel and serial optical interconnect applications. For example, Motorola's OPTOBUSTM parallel optical interconnect relies heavily on the unique characteristics of arrays of GaAs based VCSELs emitting at 850 nm to achieve its stringent performance goals at low cost. Representative parametric results of discrete VCSELs and VCSEL arrays will be compared, including `optical power output-current' and `current-voltage' curves, optical wall plug efficiencies, and modulation characteristics. The use of statistical parameter analysis across a wafer and subsequent parametric wafer maps has proven to be a valuable tool for maintaining control of the fabrication process. The consistency of VCSEL parameters across individual VCSEL arrays will be discussed. VCSELs are very robust devices. Life times at room ambient in excess of 3E6 hours have been reported by several groups. Degradation behavior of selected device parameters will be discussed. Failure analysis demonstrating the effect of proton implant depth on reliability will be presented. ESD damage at forward bias is shown to be process related, while ESD damage at reverse bias is shown to be material related. These VCSELs are ESD Class 1 devices.

  2. Photovoltaic array: Power conditioner interface characteristics

    Science.gov (United States)

    Gonzalez, C. C.; Hill, G. M.; Ross, R. G., Jr.

    1982-01-01

    The electrical output (power, current, and voltage) of flat plate solar arrays changes constantly, due primarily to changes in cell temperature and irradiance level. As a result, array loads such as dc-to-ac power conditioners must be capable of accommodating widely varying input levels while maintaining operation at or near the maximum power point of the array. The array operating characteristics and extreme output limits necessary for the systematic design of array load interfaces under a wide variety of climatic conditions are studied. A number of interface parameters are examined, including optimum operating voltage, voltage energy, maximum power and current limits, and maximum open circuit voltage. The effect of array degradation and I-V curve fill factor or the array power conditioner interface is also discussed. Results are presented as normalized ratios of power conditioner parameters to array parameters, making the results universally applicable to a wide variety of system sizes, sites, and operating modes.

  3. ENERGY CHARACTERISTICS OF ETHANOL CHARACTERISTICS ...

    African Journals Online (AJOL)

    eobe

    CHARACTERISTICS OF ETHANOL-DIESEL MIX FOR AUTOMOTIVE. DIESEL ... diesel engine and the engine speed, torque, power and specific fuel consumption (sfc) were determine .... heated on an electric stove and stirred continuously.

  4. Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

    Science.gov (United States)

    Wu, Chia-Ching; Yang, Cheng-Fu

    2013-06-12

    P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

  5. Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

    Science.gov (United States)

    Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Youtsey, C.

    1997-12-01

    We present gating characteristics of submicron vertical resonant tunneling transistors in double quantum well heterostructures. Current-voltage characteristics at room temperature and 77 K for devices with minimum feature widths of 0.9 and 0.7 μm are presented and discussed. The evolution of the I-V characteristics with increasing negative gate biases is related to the change in the lateral confinement, with a transition from a large area 2D to a quasi-1D. Even gating of multiple wells and lateral confinement effects observable at 77 K make these devices ideally suited for applications in multi-valued logic systems and low-dimensional structures.

  6. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  7. Modelling the V-I characteristic of coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Rutter, N A [Department of Materials Science, University of Cambridge, Cambridge (United Kingdom); IRC in Superconductivity, Cavendish Laboratory, Cambridge (United Kingdom)]. E-mail: ruttern@ornl.gov; Glowacki, B A [Department of Materials Science, University of Cambridge, Cambridge (United Kingdom); IRC in Superconductivity, Cavendish Laboratory, Cambridge (United Kingdom)

    2001-09-01

    The critical current densities of coated conductor samples are limited by the presence of low-angle grain boundaries. These boundaries provide an obstacle to current flow, which is determined by their misorientation angle. The superconducting layer of a coated conductor tape may be considered as a network of grains linked together by grain boundaries through which the supercurrent must pass. Such a network has been investigated using a two-dimensional grain model. The three-dimensional orientations of grains in the superconducting network can be assigned randomly based on information obtained from EBSD and x-ray texture measurements. By assigning critical current values to boundaries based on their calculated misorientation, the overall J{sub c} of macroscopic modelled samples can then be calculated. This paper demonstrates how such a technique is applied using a small-scale, idealized sample grain structure in an applied magnetic field. The onset of dissipation at the critical current may be viewed in terms of the flow of the magnetic flux across the sample along high-angle grain boundaries when the critical current is first exceeded. Through such a consideration, the model may be further used to predict the current-voltage characteristic of the coated conductor sample around the superconducting transition. (author)

  8. Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

    International Nuclear Information System (INIS)

    Wu, Yuchang; Asryan, Levon V.

    2016-01-01

    We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

  9. Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn [Low Carbon Energy Institute, China University of Mining and Technology, Xuzhou 221116 (China); School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Asryan, Levon V., E-mail: asryan@vt.edu [Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)

    2016-08-28

    We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

  10. Photovoltaic characteristics of natural light harvesting dye sensitized solar cells

    Science.gov (United States)

    Hafez, H. S.; Shenouda, S. S.; Fadel, M.

    2018-03-01

    In this work of research, anthocyanin as a natural dye obtained from raspberry fruits, was used and tested as a photon harvesting/electron donating dye in titanium dioxide nanoparticle-based DSSCs. A working photoelectrode made from TiO2 nanoparticles with an average particle size (10-40 nm) that is coated on Florine doped tin-oxide substrate, was prepared via a simple and low cost hydrothermal method. A detailed structural and morphological analysis of the TiO2 photoactive electrode was investigated by X-ray diffraction (XRD), diffuse reflectance spectrometer, transmission electron microscope (TEM) and scanning electron microscope (SEM). Complete photovoltaic characteristics including (current, voltage, outpower, and responsivity) of the natural anthocyanin based dye sensitized solar cell have been investigated under different illumination intensity ranging from 10 to 100 mW.cm- 2. The cell responsivity and efficiency of the fabricated solar cell under different illumination intensity were found to be in the range (R = 15.6-23.8 mA.W- 1 and η = 0.13-0.25) at AM = 1.5 conditions. This study is important for enhancing the future applications of the promising DSSC technology.

  11. Photovoltaic characteristics of natural light harvesting dye sensitized solar cells.

    Science.gov (United States)

    Hafez, H S; Shenouda, S S; Fadel, M

    2018-03-05

    In this work of research, anthocyanin as a natural dye obtained from raspberry fruits, was used and tested as a photon harvesting/electron donating dye in titanium dioxide nanoparticle-based DSSCs. A working photoelectrode made from TiO 2 nanoparticles with an average particle size (10-40nm) that is coated on Florine doped tin-oxide substrate, was prepared via a simple and low cost hydrothermal method. A detailed structural and morphological analysis of the TiO 2 photoactive electrode was investigated by X-ray diffraction (XRD), diffuse reflectance spectrometer, transmission electron microscope (TEM) and scanning electron microscope (SEM). Complete photovoltaic characteristics including (current, voltage, outpower, and responsivity) of the natural anthocyanin based dye sensitized solar cell have been investigated under different illumination intensity ranging from 10 to 100mW.cm -2 . The cell responsivity and efficiency of the fabricated solar cell under different illumination intensity were found to be in the range (R=15.6-23.8mA.W -1 and η=0.13-0.25) at AM=1.5 conditions. This study is important for enhancing the future applications of the promising DSSC technology. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

    2016-09-15

    Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

  13. Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

    International Nuclear Information System (INIS)

    Ma, W. J.; Zhang, X. Y.; Wang, Ying; Zheng, Yue; Lin, S. P.; Luo, J. M.; Wang, B.; Li, Z. X.

    2013-01-01

    Nanoscale multilayer structure TiO 2 /BaTiO 3 /TiO 2 has been fabricated on Pt/Ti/SiO 2 /Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO 2 /BaTiO 3 /TiO 2 /Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO 2 play a crucial role in the resistive switching phenomenon and the introduced TiO 2 /BaTiO 3 interfaces result in the high uniformity of bipolar resistive switching characteristics

  14. Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

    Science.gov (United States)

    Aleshin, A. N.; Shcherbakov, I. P.; Trapeznikova, I. N.; Petrov, V. N.

    2017-12-01

    Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH3NH3PbBr3 have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH3NH3PbBr3 at 300 K in saturation and weak field regimes were 5 and 2 cm2/V s, respectively, whereas electron mobility is 3 cm2/V s, which exceeds the mobility value 1 cm2/V s obtained earlier for FETs based on CH3NH3PbI3.

  15. Gap enhancement in phonon-irradiated superconducting tin films

    International Nuclear Information System (INIS)

    Miller, N.D.; Rutledge, J.E.

    1982-01-01

    We have measured the current-voltage (I-V) characteristics of tin-tin tunnel junctions driven out of equilibrium by a flux of near-thermal phonons from a heater. The reduced ambient temperature was T/T/sub c/ = 0.41. The nonequilibrium I-V curves are compared to equilibrium thermal I-V curves at an elevated temperature chosen to match the total number of quasiparticles. The nonequilibrium curves show a smaller current near zero bias and a larger gap than the thermal curves. This is the first experimental evidence of phonon-induced gap enhancement far below T/sub c/. The results are discussed in terms of the coupled kinetic equations of Chang and Scalapino

  16. Current simulation of symmetric contacts on CdTe

    International Nuclear Information System (INIS)

    Ruzin, A.

    2011-01-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  17. Current simulation of symmetric contacts on CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2011-12-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  18. A comparative analysis of the EEDF obtained by Regularization and by Least square fit methods

    International Nuclear Information System (INIS)

    Gutierrez T, C.; Flores Ll, H.

    2004-01-01

    The second derived of the characteristic curve current-voltage (I - V) of a Langmuir probe (I - V) is numerically calculated using the Tikhonov method for to determine the distribution function of the electrons energy (EEDF). One comparison of the obtained EEDF and a fit by least square are discussed (LS). The I - V experimental curve is obtained in a plasma source in the electron cyclotron resonance (ECR) using a cylindrical probe. The parameters of plasma are determined of the EEDF by means of the Laframboise theory. For the case of the LS fit, the obtained results are similar to those obtained by the Tikhonov method, but in the first case the procedure is slow to achieve the best fit. (Author)

  19. A comparative analysis of the EEDF obtained by Regularization and by Least square fit methods; Un analisis comparativo de la EEDF obtenido por metodos de regularizacion y por un ajuste de minimos cuadrados

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez T, C.; Flores Ll, H. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    2004-07-01

    The second derived of the characteristic curve current-voltage (I - V) of a Langmuir probe (I - V) is numerically calculated using the Tikhonov method for to determine the distribution function of the electrons energy (EEDF). One comparison of the obtained EEDF and a fit by least square are discussed (LS). The I - V experimental curve is obtained in a plasma source in the electron cyclotron resonance (ECR) using a cylindrical probe. The parameters of plasma are determined of the EEDF by means of the Laframboise theory. For the case of the LS fit, the obtained results are similar to those obtained by the Tikhonov method, but in the first case the procedure is slow to achieve the best fit. (Author)

  20. Spotřební chování studentů VŠE při výběru a v průběhu dovolené

    OpenAIRE

    Kirchnerová, Kateřina

    2013-01-01

    The Bachelor's thesis "Consumer Behaviour of Students of the University of Economics when Selecting a Holiday Destination and During Their Holiday" considers consumer behaviour of young people towards tourism. The thesis defines the issue of consumer behaviour and characterizes the tourims market and trends. Apart from the general characteristics it deals with factors determining the consumer behaviour. It presents results of research "Preferences of Europeans towards Tourism" which was condu...

  1. Tapping of electrical energy from plant leaves: Sansevieria trifasciata

    Energy Technology Data Exchange (ETDEWEB)

    Jain, K.A.; Hundet, A.; Abraham, S.; Nigam, H.L.

    Some investigations on the prospective use of plant leaves as useful battery material have been described in this paper. A bio-emf-device (BED) has been developed using the leaf of Sansevieria trifasciata. The current - voltage (I-V) and the current - power (I-power) characteristics have been measured. Kinetic studies have also been made taking different loads. The results based on these characteristics of BED indicate a close involvement of the bio-contribution in the generation of electric power. Some applications of using these BEDs are also suggested to operate low power electronic circuits.

  2. The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

    Science.gov (United States)

    Sachenko, A. V.; Kryuchenko, Yu. V.; Kostylyov, V. P.; Korkishko, R. M.; Sokolovskyi, I. O.; Abramov, A. S.; Abolmasov, S. N.; Andronikov, D. A.; Bobyl', A. V.; Panaiotti, I. E.; Terukov, E. I.; Titov, A. S.; Shvarts, M. Z.

    2016-03-01

    Temperature dependences of the photovoltaic characteristics of ( p)a-Si/( i)a-Si:H/( n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80-420 K. The open-circuit voltage ( V OC), fill factor ( FF) of the current-voltage ( I-U) characteristic, and maximum output power ( P max) reach limiting values in the interval of 200-250 K on the background of monotonic growth in the short-circuit current ( I SC) in a temperature range of 80-400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I-U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.

  3. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  4. Study on the characteristics of hysteresis loop and resistance of glow discharge plasma using argon gas

    Science.gov (United States)

    Mathew, Prijil; Sajith Mathews, T.; Kurian, P. J.; Chattopadyay, P. K.

    2018-05-01

    Hysteresis in discharge current is produced in a low-pressure, magnetic field free, Glow discharge plasma by varying discharge voltage. The variation in area of the hysteresis loops with pressure, electrode distance and load resistor studied. To understand, the nonlinear behaviour of the I-V characteristics, the changes in gas resistance with electrode voltage, pressure and load resistor were studied. After many trials we propose the best suitable empirical equation for the exponential decrease of the gas resistance with electrode voltage as; R = Rmin + Ae-0.008V, which is a novel one and matches well with our experimental results.

  5. Enhanced mixing characteristics of GaAs/3,4,9,10-perylenetetracarboxylic dianhydride Schottky diodes

    International Nuclear Information System (INIS)

    Ginev, G; Riedl, T; Parashkov, R; Johannes, H-H; Kowalsky, W

    2003-01-01

    The influences on the mixing properties of GaAs Schottky diodes containing an organic 3,4,9,10-perylenetetracarboxylic dianhydride layer were investigated. The frequency conversion ability of the devices was determined by considering the I-V characteristics and high frequency reflection parameters by using a mixing technique operated in the microwave range. The results show that an organic layer with 20 nm thickness enhances the diode conversion gain for mixing applications by 3 dB and lowers the device operating bias voltage by 0.1 V. This process is related to the specific properties of the organic semiconductor and resulting organic-inorganic interface

  6. Evaluation and Testing of the Naval Postgraduate School Satellite (NPSAT1) Solar Cell Measurement System

    National Research Council Canada - National Science Library

    Lo, Benson

    2004-01-01

    .... It will trace the cells' current-voltage (I-V) curves while in orbit. The SMS consists of a radiation-hardened microcontroller that uses a radiation-hardened FPGA to monitor a collection of sensors...

  7. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  8. Study of the charge transport characteristics of dendrimer molecular thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, J.C., E-mail: jcli@mail.neu.edu.cn; Han, N.; Wang, S.S.; Ba, D.C.

    2011-05-31

    In this work, we systematically studied the electrical characteristics of two types of dendritic arylamine thin film devices. We observed that, for devices with different interfacial structures, their charge injection barriers and transport properties are obviously different. The smallest charge injection barrier is observed in dendrimer devices without charge-transfer interfacial layers. The Richardson-Schottky thermionic emission model can be well used to fit the experimental current-voltage characteristics at a lower voltage region. The charge injection barrier increases about 0.4 eV and 0.5 eV when a 1-decanethiol self-assembly layer and -CN terminated dendrimer thin films are inserted as the interfacial layer, respectively. It is shown that the molecule/electrode charge-transfer interfaces can largely affect the device charge injection/transport process and consequently change the device performance. In this case, the space charge limited conduction theory is more applicable to simulate the device conduction mechanism. Owing to its ultra-thin thickness, the self-assembly monolayer technique is proved to be an efficient approach in engineering the interfacial electronic structures of dendrimer thin film devices.

  9. Study of the charge transport characteristics of dendrimer molecular thin films

    International Nuclear Information System (INIS)

    Li, J.C.; Han, N.; Wang, S.S.; Ba, D.C.

    2011-01-01

    In this work, we systematically studied the electrical characteristics of two types of dendritic arylamine thin film devices. We observed that, for devices with different interfacial structures, their charge injection barriers and transport properties are obviously different. The smallest charge injection barrier is observed in dendrimer devices without charge-transfer interfacial layers. The Richardson-Schottky thermionic emission model can be well used to fit the experimental current-voltage characteristics at a lower voltage region. The charge injection barrier increases about 0.4 eV and 0.5 eV when a 1-decanethiol self-assembly layer and -CN terminated dendrimer thin films are inserted as the interfacial layer, respectively. It is shown that the molecule/electrode charge-transfer interfaces can largely affect the device charge injection/transport process and consequently change the device performance. In this case, the space charge limited conduction theory is more applicable to simulate the device conduction mechanism. Owing to its ultra-thin thickness, the self-assembly monolayer technique is proved to be an efficient approach in engineering the interfacial electronic structures of dendrimer thin film devices.

  10. Characteristics of the SFCL by turn-ratio of three-phase transformer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, I. S.; Choi, H. S.; Jung, B. I. [Chosun University, GwangJu (Korea, Republic of)

    2013-12-15

    According to the increase of electric consumption nowadays, power system becomes complicated. Due to this, the size of single line-to-ground fault from power system also increases to have many problems. In order to resolve these problems effectively, an Superconducting Fault Current Limiter(SFCL) was proposed and continuous study has been done. In this paper, an SFCL was combined to the neutral line of a transformer. An superconductivity has the characteristics of zero resistance below critical temperature, because of this, SFCL has nearly zero resistance, so we connecting SFCL to neutral line will not only have any loss in the normal operation but also have the less burden of electric power because of only limiting the initial fault current. We analyzed the characteristics of current, voltage according to the changes of turn ratio of 3 phase system in case of combinations of an SFCL to the neutral line. It was confirmed that the limiting rate of initial fault current by the increase of turn ratio was reduced.

  11. Analysis of Simulated Output Characteristics of Gas Sensor Based on Graphene Nanoribbon

    Directory of Open Access Journals (Sweden)

    A. Mahmoudi

    2016-01-01

    Full Text Available This work presents simulated output characteristics of gas sensor transistors based on graphene nanoribbon (GNRFET. The device studied in this work is a new generation of gas sensing devices, which are easy to use, ultracompact, ultrasensitive, and highly selective. We will explain how the exposure to the gas changes the conductivity of graphene nanoribbon. The equations of the GNRFET gas sensor model include the Poisson equation in the weak nonlocality approximation with proposed sensing parameters. As we have developed this model as a platform for a gas detection sensor, we will analyze the current-voltage characteristics after exposure of the GNRFET nanosensor device to NH3 gas. A sensitivity of nearly 2.7% was indicated in our sensor device after exposure of 1 ppm of NH3. The given results make GNRFET the right candidate for use in gas sensing/measuring appliances. Thus, we will investigate the effect of the channel length on the ON- and OFF-current.

  12. Internal resonances in periodically modulated long Josephson junctions

    DEFF Research Database (Denmark)

    Larsen, Britt Hvolbæk; Mygind, Jesper; Ustinov, Alexey V.

    1995-01-01

    Current-voltage (I-V) characteristics of long Josephson junctions with a periodic lattice of localized inhomogeneities are studied. The interaction between the moving fluxons and the inhomogeneities causes resonant steps in the IV-curve. Some of these steps are due to a synchronization to resonant...... Fiske modes in the sub-junctions formed between the inhomogeneities. The voltage positions of the resonant steps oscillate as function of the applied magnetic field with a period corresponding to the inclusion of one magnetic flux quantum, Φ0=h/2e, per sub-junction. A qualitative explanation that takes...

  13. Contact spectroscopy of high-temperature superconductors. Review

    International Nuclear Information System (INIS)

    Yanson, I.K.

    1991-01-01

    We have attempted to systematize the research of high temperature superconductors by means of tunneling and point-contact spectroscopy. The theoretical grounds of the methods are briefly described. The deviations of current-voltage characteristics from ordinary superconductors are considered. The properties of point contacts with direct energy gap measurfements and the fine structure of derivatives of i(v) curves at the overlap energies are reviewed for the high-T c La 2-x Sr x CuO 4 materials

  14. Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters

    CERN Document Server

    Kemmer, J; Krause, N; Krieglmeyer, C; Yang Yi

    2000-01-01

    A fast qualitative method is described for evaluation of semiconductor parameters by analyzing both the capacitance/voltage (C/V) and current/voltage (I/V) characteristics of pn- or Schottky-diodes, which are fabricated on the material under investigation. The method is applied for measurement of recombination and generation lifetimes of minority charge carriers and for determination of doping profiles and distribution of active generation/recombination (G/R) centers after irradiation with Am-alpha particles and deep phosphorus implantation. Measurements on epitaxial silicon result in doping profiles and distributions of active impurities within the epi-layer.

  15. Superconductor (Nb)-charge density wave (NbSe sub 3) point-contact spectroscopy

    CERN Document Server

    Sinchenko, A A

    2003-01-01

    Measurements of differential current-voltage (I-V) characteristics of point contacts between Nb and the charge density wave (CDW) conductor NbSe sub 3 formed along the conducting chain direction are reported. Below the superconducting transition of Nb, we have clearly observed Andreev reflection of the gapless electrons of NbSe sub 3. Analysis of the spectra obtained indicates that when the energy of injected particles exceeds the superconducting energy gap, the superconductivity near the S-CDW interface is suppressed because of non-equilibrium effects.

  16. Optical and Electrical Properties of Ar+ Implanted PET

    Science.gov (United States)

    Kumar, Rajiv; Shekhawat, Nidhi; Sharma, Annu; Aggarwal, Sanjeev; Kumar, Praveen; Kanjilal, D.

    2011-07-01

    In the present work, the effect of 100 keV argon ion implantation on the optical and electrical properties of PET has been studied. A continuous reduction in optical band gap (from 3.63 to 1.93 eV) with increasing implantation dose has been observed as analyzed using UV-Visible absorption spectroscopy. Current-Voltage (I-V) characteristics have been studied which clearly indicate the enhancement in the conductivity of PET specimens as an effect of implantation. This increase in conductivity has been correlated with the decrease in optical band gap.

  17. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    H. MAZARI

    2014-05-01

    Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

  18. Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

    International Nuclear Information System (INIS)

    Tang, N.Y.

    2009-01-01

    The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

  19. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  20. InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

    Directory of Open Access Journals (Sweden)

    A. Pitanti

    2011-08-01

    Full Text Available Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III leads to a strong rectification effect when the current-voltage (I-V characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.

  1. Shapiro like steps reveals molecular nanomagnets’ spin dynamics

    International Nuclear Information System (INIS)

    Abdollahipour, Babak; Abouie, Jahanfar; Ebrahimi, Navid

    2015-01-01

    We present an accurate way to detect spin dynamics of a nutating molecular nanomagnet by inserting it in a tunnel Josephson junction and studying the current voltage (I-V) characteristic. The spin nutation of the molecular nanomagnet is generated by applying two circularly polarized magnetic fields. We demonstrate that modulation of the Josephson current by the nutation of the molecular nanomagnet’s spin appears as a stepwise structure like Shapiro steps in the I-V characteristic of the junction. Width and heights of these Shapiro-like steps are determined by two parameters of the spin nutation, frequency and amplitude of the nutation, which are simply tuned by the applied magnetic fields

  2. The dynamics of disordered systems and the motion of vortices in disordered type-II superconductors

    International Nuclear Information System (INIS)

    Muellers, J.; Schmid, A.

    1995-01-01

    We develop a field theoretical method which permits us to study the dynamics of interacting particles in disordered systems. In particular, making use of a Hartree-type approximation, we obtain a self-consistent system of equations for disorder averaged quantities. The method is first applied to a single particle on a rough surface. Then, we calculate the current-voltage (I-V) characteristics of a type-II superconductor in the flux flow regime. Finally, the structure of the steps is discussed which arise in the I-V-characteristics when a small ac field is superimposed on the constant voltage. These may serve as a probe for incipient melting of the vortex lattice. (orig.)

  3. DNA-FET using carbon nanotube electrodes

    International Nuclear Information System (INIS)

    Sasaki, T K; Ikegami, A; Aoki, N; Ochiai, Y

    2006-01-01

    We demonstrate DNA field effect transistor (DNA-FET) using multiwalled carbon nanotube (MWNT) as nano-structural source and drain electrodes. The MWNT electrodes have been fabricated by focused ion-beam bombardment (FIBB). A very short channel, approximately 50 nm, was easily formed between the severed MWNT. The current-voltage (I-V) characteristics of DNA molecules between the MWNT electrodes showed hopping transport property. We have also measured the gate-voltage dependence in the I-V characteristics and found that poly DNA molecules exhibits p-type conduction. The transport of DNA-FET can be explained by two hopping lengths which depend on the range of the source-drain bias voltages

  4. The effects of temperature on Schottky diode barrier height and evidence of multiple barrier

    International Nuclear Information System (INIS)

    Rabah, K.V.O.

    1994-07-01

    Experimental study of Capacitance-Voltage-Temperature (C-V-T) plots, Current-Voltage-Temperature (I-V-T) characteristics have been undertaken in order to determine the height of the Schottky barrier. The results of the barrier height obtained by the above two methods were found to differ as well as vary with temperature change. In view of this discrepancy in barrier height values, two further experiments were performed: one on activation energy (I-T) plots and the other on pulsed (I-V-T) characteristics, and the results were found to show a similar trend. The Schottky diode studied was a 30CP040. (author). 23 refs, 9 figs, 3 tabs

  5. Vortex dynamics in superconducting transition edge sensors

    Science.gov (United States)

    Ezaki, S.; Maehata, K.; Iyomoto, N.; Asano, T.; Shinozaki, B.

    2018-02-01

    The temperature dependence of the electrical resistance (R-T) and the current-voltage (I-V) characteristics has been measured and analyzed in a 40 nm thick Ti thin film, which is used as a transition edge sensor (TES). The analyses of the I-V characteristics with the vortex-antivortex pair dissociation model indicate the possible existence of the Berezinskii-Kosterlitz-Thouless (BKT) transition in two-dimensional superconducting Ti thin films. We investigated the noise due to the vortices' flow in TESs. The values of the current noise spectral density in the TESs were estimated by employing the vortex dynamics caused by the BKT transition in the Ti thin films. The estimated values of the current noise spectral density induced by the vortices' flow were in respectable agreement with the values of excess noise experimentally observed in the TESs with Ti/Au bilayer.

  6. Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts

    International Nuclear Information System (INIS)

    Tsai, Chia-Hung; Hung, Chen-I; Yang, Cheng-Fu; Houng, Mau-Phon

    2010-01-01

    We utilize hydrogen peroxide (H 2 O 2 ) treatment on (0 0 0 1) ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts (SCs). X-ray rocking curves show the mosaicity structure becomes larger after H 2 O 2 treatment. Photoluminescence (PL) spectra show the yellow-orange emission peaking at ∼576-580 nm with respect to deep level of oxygen interstitials introduced by H 2 O 2 treatment. The threshold formation of ZnO 2 resistive layer on H 2 O 2 -treated ZnO for 45 min is observed from grazing-incidence X-ray diffraction. The better electrical characteristic is performed by Pt oxide SC with the larger barrier height (1.09 eV) and the lower leakage current (9.52 x 10 -11 A/cm 2 at -2 V) than Pt SC on the H 2 O 2 -treated ZnO for 60 min. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS) examinations indicate the promoted interface oxide bonding and Zn outdiffusion for Pt oxide contact, different from Pt contact. Based on current-voltage, capacitance-voltage, X-ray diffraction, PL spectra, XPS, and SIMS results, the possible mechanism for effective rectifying characteristic and enhanced Schottky fbehavior is given.

  7. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2012-12-15

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

  8. Fosfomycin i.v. for Treatment of Severely Infected Patients

    Science.gov (United States)

    2017-07-27

    Bacterial Infections; Bone Diseases, Infectious; Osteomyelitis; Central Nervous System Bacterial Infections; Meningitis, Bacterial; Encephalitis; Brain Abscess; Urinary Tract Infections; Respiratory Tract Infections; Pneumonia, Bacterial; Skin Diseases, Bacterial; Soft Tissue Infections; Intraabdominal Infections; Sepsis; Bacteremia; Endocarditis, Bacterial

  9. Jeshtsho odin shag - i v dessjatku! / Boris Tuch

    Index Scriptorium Estoniae

    Tuch, Boris, 1946-

    2008-01-01

    Tallinna Linnateatris esitleti näitekirjaniku teist näidendiraamatut. "Näidendid II" koondab neli lavateksti : "Kaev", "Meeletu", "Latern" ja "Kaotajad". Sel puhul käis Jaan Tätte päevaks Vilsandilt ära Tallinnas. Lühidalt ka varasemate näidendite populaarsusest eri teatrite lavadel

  10. [Update of breast cancer in primary care (I/V)].

    Science.gov (United States)

    Vich, P; Brusint, B; Alvarez-Hernández, C; Cuadrado-Rouco, C; Diaz-García, N; Redondo-Margüello, E

    2014-09-01

    Breast cancer is a prevalent disease affecting all areas of the patients' lives. Therefore, family physicians should have a thorough knowledge of this disease in order to optimize the health care services for these patients, and making the best use of available resources. A series of 5 articles on breast cancer is presented below. It is based on a review of the scientific literature over the last 10 years. The first article reviews the epidemiology, risk factors, and protective factors in this disease This summary report aims to provide a current and practical review on breast cancer, providing answers to family doctors and helping them to support the patients for their benefit throughout their illness. Copyright © 2014 Sociedad Española de Médicos de Atención Primaria (SEMERGEN). Publicado por Elsevier España. All rights reserved.

  11. Razvitije turizma u nass i v drugihh stranahh / Lembo Tanning

    Index Scriptorium Estoniae

    Tanning, Lembo

    2008-01-01

    Ülevaade turismi arengust Eestis ja teistes Euroopa Liidu riikides. Diagrammid: Turismi areng 1995-2007; Eesti turismiteenuste ekspordi areng 2002-2006. Graafikud: Välis- ja siseturism Eestis 1996-2007; Eestis ööbimised 1995-2007

  12. Finskii grafitsheskii beton teper takzhe i v Estonii / Mait Eelrand

    Index Scriptorium Estoniae

    Eelrand, Mait

    2007-01-01

    Graafilise betooni meetodi arendas 1990. aastate lõpul välja soome sisearhitekt Samuli Naamanka, tehnoloogia on patenteerinud tema asutatud firma Graphic Concrete Oy. AS E-Betoonelement kasutas graafilise betooni tehnoloogiat esimesena Rakveres büroohoone fassaadi kujundamiseks. Kommenteerivad Graphic Concrete Oy tegevdirektor H. Lanningu ja K. Meus AS-st E-Betoonelement

  13. Estonskii za rubezhom i v Estonii / Roman Starapopov

    Index Scriptorium Estoniae

    Starapopov, Roman

    2007-01-01

    Tallinnas toimus rahvuskaaslaste programmi konverents, kus haridus- ja teadusminister Tõnis Lukas avaldas arvamust, et eesti keelt kõnelevate inimeste arv võiks järgmisel aastakümnel küündida kuni 1,5 miljonini

  14. Danske mejere - en fauna i vækst

    DEFF Research Database (Denmark)

    Enghoff, Henrik; Pedersen, Jan; Toft, Søren

    2014-01-01

    Since 1985 the num ber of harvestmen spe cies re corded from Den mark has grown from 17 to 25. The new spe cies and the year of their first Dan ish re cord are: Opilio canestrinii (Thorell, 1876) – 1985; Lacinius horridus (Pan zer, 1794) – 1994; Odiellus spinosus (Bosc, 1792) – 2006; Dicranopalpus...... tisciae Avram, 1968 (= L. rupestre auct.) in Den mark; and Nemastoma dentigerum Canestrini, 1873, N. bimaculatum (Fabricius, 1775), Lacinius dentiger (C.L. Koch, 1848), Leiobunum limbatum L. Koch, 1861, and Nelima doriae (Canestrini, 1871) are men tioned as can di dates for fu ture dis cov er ies...

  15. Using the direct current voltage gradient technology as a quality control tool during construction of new pipelines

    CSIR Research Space (South Africa)

    Masilela, Z

    1998-06-01

    Full Text Available pipelines. This technique is now increasingly gaining popularity as a good quality control tool when used on newly laid pipelines to detect coating damage, most of which could be attributed to construction work. On a recently built 50 km long gas pipeline...

  16. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    AUTHOR|(CDS)2261553

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  17. Direct current voltage gradient (DCVG) technique as a nondestructive testing tool for locating coating defect of buried pipelines

    International Nuclear Information System (INIS)

    Muhamad Daud; Mohd Shariff Sattar

    2009-04-01

    Protection of buried steel pipelines relies upon coating backed up by cathodic protection. All coatings are prone to general deterioration. Coating defects commonly occur as a result of construction damage, and ongoing degradation by environmental factors. Good maintenance and monitoring of protection system is important. (author)

  18. Li-Po Battery Charger Based on the Constant Current/Voltage Parallel Resonant Converter Operating in ZVS

    Directory of Open Access Journals (Sweden)

    Alberto M. Pernía

    2018-04-01

    Full Text Available Battery requirements for electrical vehicles are continuously becoming more demanding in terms of energy density and reliability. Nowadays, batteries for drones must be able to supply 100 A for 15 min, not to mention the specifications required for batteries in electrical vehicles. These specifications result in more stringent specifications for battery chargers. They are required to be more efficient, flexible, and, as with any another power equipment, to have reduced size and weight. Since the parallel resonant converter can operate as a current source and as a voltage source, this paper presents a battery charger power stage for lithium ion polymer batteries, based on the above topology, operating in zero voltage switching mode, and implementing frequency and duty cycle control.

  19. Research on the electrical characteristics of the Pt/CdS Schottky diode

    Science.gov (United States)

    Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

    2013-08-01

    With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

  20. The Influence of Materials of Electrodes of Sensitized Solar Cells on Their Capacitive and Electrical Characteristics

    Science.gov (United States)

    Lazarenko, P. I.; Kozyukhin, S. A.; Mokshina, A. I.; Sherchenkov, A. A.; Patrusheva, T. N.; Irgashev, R. A.; Lebedev, E. A.; Kozik, V. V.

    2018-05-01

    An estimation is made of the internal capacitance of sensitized solar cells (SSCs) manufactured by the method of extraction pyrolysis. The structures under study are characterized by a hysteresis in the current-voltage characteristic obtained in the direct and reverse modes of voltage variation. The investigations of SSCs demonstrate a high inertness of the parameters under connection and disconnection of the light source. The use of a transparent conductive ITO-electrode, manufactured by the extraction pyrolysis, increases the external capacitance of the cell and decelerates the processes of current decay after the light source connection compared to the commercial FTO-electrode. The values of charges, capacitances, and SSC charge conservation efficiencies are calculated and the internal resistance of the SSCs under study is estimated. According to the estimations performed, the specimen with an ITO-layer possesses a capacitance equal to C1 = 1.23·10-3 F, which is by two orders of magnitude higher than that of the specimen with a FTO-layer (C2 = 2.06·10-5 F).

  1. Characteristics of the Current-Controlled Phase Transition of VO2 Microwires for Hybrid Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Arash Joushaghani

    2015-08-01

    Full Text Available The optical and electrical characteristics of the insulator-metal phase transition of vanadium dioxide (VO2 enable the realization of power-efficient, miniaturized hybrid optoelectronic devices. This work studies the current-controlled, two-step insulator-metal phase transition of VO2 in varying microwire geometries. Geometry-dependent scaling trends extracted from current-voltage measurements show that the first step induced by carrier injection is delocalized over the microwire, while the second, thermally-induced step is localized to a filament about 1 to 2 μm wide for 100 nm-thick sputtered VO2 films on SiO2. These effects are confirmed by direct infrared imaging, which also measures the change in optical absorption in the two steps. The difference between the threshold currents of the two steps increases as the microwires are narrowed. Micron- and sub-micron-wide VO2 structures can be used to separate the two phase transition steps in photonic and electronic devices.

  2. Oxygen pumping characteristics of Cu-Ti double substituted bismuth vanadate

    Energy Technology Data Exchange (ETDEWEB)

    Paydar, M.H. [Shiraz Univ. (Iran). Dept. of Metallurgy and Material Sciences; Hadian, A.M. [Teheran Univ. (Iran). Dept. of Metallurgy and Material Sciences; Fafilek, G. [Technische Univ., Vienna (Austria). Inst. fuer Technische Elektrochemie

    2002-07-01

    In the present paper, we are going to report on a detailed study of the characteristics of an electrochemical oxygen pump for an open system using Cu-Ti double substituted bismuth vanadate as the electrolyte. The major objectives are to show a correlation between oxygen pumping current, cell voltage, Faradic efficiency and oxygen production rate. The maximum current density that can be applied without significant structural modification has been determined and the effect of working temperature on the mentioned parameters have been investigated. The results show that there is an Ohmic relationship between current and voltage at low current densities and a deviation towards lower voltages than expected from Ohm's law with increasing current density. The oxygen production rate increased in a linear fashion by increasing the current density while at high current densities, corresponding to the non linear current voltage section, its gradient decline. Under constant current load, at very high current density (I > 800 mAcm{sup -2}), instability in cell potential was observed, which was reversible and supposed to be the effect of electronic percolation. (orig.)

  3. The effect of discharge chamber geometry on the characteristics of low-pressure RF capacitive discharges

    Energy Technology Data Exchange (ETDEWEB)

    Lisovskiy, V.A. [Ecole Polytech, Lab Phys and Technol Plasmas, F-91128 Palaiseau, (France); Booth, J.P. [Lam Res Corp, Fremont, CA 94538 (United States); Landry, K. [Unaxis, F-38100 Grenoble, (France); Douai, D. [CEA Cadarache, Dept Rech Fus Controlee, EURATOM Assoc, F-13108 St Paul Les Durance, (France); Cassagne, V. [Riber, F-95873 Bezons, (France); Yegorenkov, V.D. [Kharkov Natl Univ, Dept Phys, UA-61077 Kharkov, (Ukraine)

    2007-07-01

    We report the measured extinction curves and current voltage characteristics (CVCs) in several gases of RF capacitive discharges excited at 13.56 MHz in chambers of three different geometries: 1) parallel plates surrounded by a dielectric cylinder ('symmetric parallel plate'); 2) parallel plates surrounded by a metallic cylinder ('asymmetric confined'); and 3) parallel plates inside a much larger metallic chamber ('asymmetric unconfined'), similar to the gaseous electronics conference reference cell. The extinction curves and the CVCs show differences between the symmetric, asymmetric confined, and asymmetric unconfined chamber configurations. In particular, the discharges exist over a much broader range of RF voltages and gas pressures for the asymmetric unconfined chamber. For symmetric and asymmetric confined discharges, the extinction curves are close to each other in the regions near the minima and at lower pressure, but at higher pressure, the extinction curve of the asymmetric confined discharge runs at a lower voltage than the one for the discharge in a symmetric chamber. In the particular cases of an 'asymmetric unconfined chamber' discharge or 'asymmetric confined' one, the RF discharge experiences the transition from a 'weak-current' mode to a 'strong-current' one at lower RF voltages than is the case for a 'symmetric parallel-plate' discharge. (authors)

  4. Organic-inorganic Au/PVP/ZnO/Si/Al semiconductor heterojunction characteristics

    Science.gov (United States)

    Mokhtari, H.; Benhaliliba, M.

    2017-11-01

    The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction (HJ) diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone (PVP) layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted. Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity (n > 4). A high rectifying (~4.6 × 10 4) device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current (SCLC) conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.

  5. Effect of the Mesh Transparency on the Electrical Characteristics of DC Pseudo Discharge

    International Nuclear Information System (INIS)

    Al-Halim, M. A. Abd; Abu-Hashem, A.; Moubarak, D. I.

    2015-01-01

    A DC pseudo discharge for air has been studied. Air pressure is used in the range between 0.7 Torr and 12 Torr. The breakdown occurs between a plane cathode and a mesh anode at transparencies of 19%, 46%, and 65%. The current-voltage characteristic curves of the discharge, which are measured at different pressures, distances, and mesh transparences, take effect in the region of abnormal glow. The discharge voltage decreases as the air pressure increases, while more voltage is needed to maintain the discharge when either the mesh transparency or the inter-electrode distance is increased. An increment of mesh transparency causes high negative potential behind the mesh due to the high concentration of electrons, which accumulate and collide with neutral atoms. Paschen curves deviate from the expected regular one. The left side of Paschen curves appears at inter-electrode distance of 1 mm, whereas the right side appears at inter-electrode distance of 5 mm. The intermediate region is observed only at 3 mm distance between the two electrodes. For the transparency range used in this work, it is found that the decrement of the breakdown voltage, on the right side, depends on the mesh transparency. For different electrode separations, the measured Paschen curves are coincident and deviate from the standard ones of Paschen's law. (paper)

  6. Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination.

    Science.gov (United States)

    Yamada, Toshishige; Yamada, Hidenori; Lohn, Andrew J; Kobayashi, Nobuhiko P

    2011-02-04

    Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny Coulomb island, and its existence is possible due to the large surface depletion region created within contributing nanowires. Electrons tunnel in and out of the Coulomb island, resulting in the Coulomb staircase I-V. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.

  7. Imaging of current density distributions with a Nb weak-link scanning nano-SQUID microscope

    Science.gov (United States)

    Shibata, Yusuke; Nomura, Shintaro; Kashiwaya, Hiromi; Kashiwaya, Satoshi; Ishiguro, Ryosuke; Takayanagi, Hideaki

    2015-10-01

    Superconducting quantum interference devices (SQUIDs) are accepted as one of the highest magnetic field sensitive probes. There are increasing demands to image local magnetic fields to explore spin properties and current density distributions in a two-dimensional layer of semiconductors or superconductors. Nano-SQUIDs have recently attracting much interest for high spatial resolution measurements in nanometer-scale samples. Whereas weak-link Dayem Josephson junction nano-SQUIDs are suitable to miniaturization, hysteresis in current-voltage (I-V) characteristics that is often observed in Dayem Josephson junction is not desirable for a scanning microscope. Here we report on our development of a weak-link nano-SQUIDs scanning microscope with small hysteresis in I-V curve and on reconstructions of two-dimensional current density vector in two-dimensional electron gas from measured magnetic field.

  8. Effects of a highly Si-doped GaN current spreading layer at the n+-GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cho, H. K.; Choi, R. J.; Hahn, Y. B.; Lee, H. J.; Hong, C. H.

    2004-01-01

    Highly Si-doped GaN thin current spreading layer (CSL) with various carrier concentrations were inserted before the n + -GaN/multi-quantum-well (MQW) interface controlled by the growth rate and the modulated Si-doping in InGaN/GaN blue light-emitting diodes (LEDs), and their effects were investigated by using capacitance-voltage (C-V), current-voltage (I-V), and output power measurements. The LEDs with a highly Si-doped CSL show enhanced I-V characteristics and increased output power with increasing carrier concentration up to some critical point in the CSL. This means that proper high Si-doping in some limited area before the interface may enhance the device performance through the current spreading effect.

  9. Development of thin-film Si HYBRID solar module

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

    2009-06-15

    The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

  10. Electrical characterization of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A.C.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

    2007-05-15

    Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10{sup -5} {omega} cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    Science.gov (United States)

    Gu, Lei; Fu, Hua-Hua

    2015-12-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

  12. Electric properties and fabrication of IMI-O LB films containing the imidazole group

    CERN Document Server

    Yoo, S Y; Kwon, Y S; Park, J C

    1999-01-01

    We fabricated an IMI-O polymer containing an imidazole group that could form a complex structure between the monolayer and the metal ions at the air-water interface. Also, the monolayer behavior at the air-water interface and the electrical properties of metal-complexed Langmuir-Blodgett (LB) films were investigated by using Brewster angle microscopy (BAM) and current-voltage(I-V) measurements. The difference in the BAM images between the pure water and the aqueous metal ions is attributed to the interactions of the copolymers with the metal ions at the interface and the consequent change of the monolayer organization. In the I-V characteristics, the current for LB films with different metal ion depended on the quantity of the metal-ion complexed with the LB film due to the interaction between the metal ion and the IMI-O polymer.

  13. Charge transport in highly efficient iridium cored electrophosphorescent dendrimers

    Science.gov (United States)

    Markham, Jonathan P. J.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.; Weiter, Martin; Bässler, Heinz

    2004-01-01

    Electrophosphorescent dendrimers are promising materials for highly efficient light-emitting diodes. They consist of a phosphorescent core onto which dendritic groups are attached. Here, we present an investigation into the optical and electronic properties of highly efficient phosphorescent dendrimers. The effect of dendrimer structure on charge transport and optical properties is studied using temperature-dependent charge-generation-layer time-of-flight measurements and current voltage (I-V) analysis. A model is used to explain trends seen in the I-V characteristics. We demonstrate that fine tuning the mobility by chemical structure is possible in these dendrimers and show that this can lead to highly efficient bilayer dendrimer light-emitting diodes with neat emissive layers. Power efficiencies of 20 lm/W were measured for devices containing a second-generation (G2) Ir(ppy)3 dendrimer with a 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene electron transport layer.

  14. Towards a Carbon Nanotube Intermodulation Product Sensor for Nonlinear Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Mitchell B. Lerner

    2015-01-01

    Full Text Available It is critically important in designing RF receiver front ends to handle high power jammers and other strong interferers. Instead of blocking incoming energy or dissipating it as heat, we investigate the possibility of redirecting that energy for harvesting and storage. The approach is based on channelizing a high power signal into a previously unknown circuit element which serves as a passive intermodulation device. This intermodulation component must produce a hysteretic current-voltage curve to be useful as an energy harvester. Here we demonstrate a method by which carbon nanotube transistors produce the necessary hysteretic I-V curves. Such devices can be tailored to the desired frequency by introducing functional groups to the nanotubes. These effects controllably enhance the desired behavior, namely, hysteretic nonlinearity in the transistors’ I-V characteristic. Combining these components with an RF energy harvester may one day enable the reuse of inbound jamming energy for standard back end radio components.

  15. Spin resolved electronic transport through N@C20 fullerene molecule between Au electrodes: A first principles study

    Science.gov (United States)

    Caliskan, Serkan

    2018-05-01

    Using first principles study, through Density Functional Theory combined with Non Equilibrium Green's Function Formalism, electronic properties of endohedral N@C20 fullerene molecule joining Au electrodes (Au-N@C20) was addressed in the presence of spin property. The electronic transport behavior across the Au-N@C20 molecular junction was investigated by spin resolved transmission, density of states, molecular orbitals, differential conductance and current-voltage (I-V) characteristics. Spin asymmetric variation was clearly observed in the results due to single N atom encapsulated in the C20 fullerene cage, where the N atom played an essential role in the electronic behavior of Au-N@C20. This N@C20 based molecular bridge, exhibiting a spin dependent I-V variation, revealed a metallic behavior within the bias range from -1 V to 1 V. The induced magnetic moment, spin polarization and other relevant quantities associated with the spin resolved transport were elucidated.

  16. Influence of vortex-lattice melting on the resistive properties of a superconducting thin-film transformer

    International Nuclear Information System (INIS)

    Glazman, L.I.; Fogel', N.Y.

    1983-01-01

    The current-voltage curve of a transformer (the dependence of the secondary voltage V 2 on the transport current I 1 in the primary circuit) has been calculated for two-dimensional vortex-lattice melting. It is shown that even in the critical temperature range the I--V curve loses its root singularity characteristic of a transformer operating in the standard mode. When the lattice is completely melted, the maximum of the V 2 (I 1 ) curve shifts to higher currents while V 2 is much lower than the primary voltage V 1 at any value of I 1 . All of this makes it possible to study vortex-lattice melting using a superconducting transformer. We compare our calculated I--V curve with that obtained experimentally by Tarenkov et al. 8

  17. Performance Characterization of Dye-Sensitized Photovoltaics under Indoor Lighting.

    Science.gov (United States)

    Chen, Chia-Yuan; Jian, Zih-Hong; Huang, Shih-Han; Lee, Kun-Mu; Kao, Ming-Hsuan; Shen, Chang-Hong; Shieh, Jia-Min; Wang, Chin-Li; Chang, Chiung-Wen; Lin, Bo-Zhi; Lin, Ching-Yao; Chang, Ting-Kuang; Chi, Yun; Chi, Cheng-Yu; Wang, Wei-Ting; Tai, Yian; Lu, Ming-De; Tung, Yung-Liang; Chou, Po-Ting; Wu, Wen-Ti; Chow, Tahsin J; Chen, Peter; Luo, Xiang-Hao; Lee, Yuh-Lang; Wu, Chih-Chung; Chen, Chih-Ming; Yeh, Chen-Yu; Fan, Miao-Syuan; Peng, Jia-De; Ho, Kuo-Chuan; Liu, Yu-Nan; Lee, Hsiao-Yi; Chen, Chien-Yu; Lin, Hao-Wu; Yen, Chia-Te; Huang, Yu-Ching; Tsao, Cheng-Si; Ting, Yu-Chien; Wei, Tzu-Chien; Wu, Chun-Guey

    2017-04-20

    Indoor utilization of emerging photovoltaics is promising; however, efficiency characterization under room lighting is challenging. We report the first round-robin interlaboratory study of performance measurement for dye-sensitized photovoltaics (cells and mini-modules) and one silicon solar cell under a fluorescent dim light. Among 15 research groups, the relative deviation in power conversion efficiency (PCE) of the samples reaches an unprecedented 152%. On the basis of the comprehensive results, the gap between photometry and radiometry measurements and the response of devices to the dim illumination are identified as critical obstacles to the correct PCE. Therefore, we use an illuminometer as a prime standard with a spectroradiometer to quantify the intensity of indoor lighting and adopt the reverse-biased current-voltage (I-V) characteristics as an indicator to qualify the I-V sampling time for dye-sensitized photovoltaics. The recommendations can brighten the prospects of emerging photovoltaics for indoor applications.

  18. Characteristics of photodiodes with «intrinsic oxide — InSe» structure, irradiated with high-energy electrons

    Directory of Open Access Journals (Sweden)

    Sydor O. N.

    2012-12-01

    Full Text Available The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33—33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with «intrinsic oxide — p-InSe» structure. It has been found that the minimum dose improves their basic parameters, while the maximum dose significantly reduces the short circuit current and devices photosensitivity. In this case, an increase in volt-watt sensitivity and a minimal increase in coupling coefficient of the I-V characteristic are observed.

  19. A hybrid heterojunction with reverse rectifying characteristics fabricated by magnetron sputtered TiOx and plasma polymerized aniline structure

    International Nuclear Information System (INIS)

    Sarma, Bimal K; Pal, Arup R; Bailung, Heremba; Chutia, Joyanti

    2012-01-01

    A TiO x film produced by direct current reactive magnetron sputtering without substrate heating or post-deposition annealing and a plasma polymerized aniline (PPA) structure deposited in the same reactor by a radio-frequency glow discharge without the assistance of a carrier gas are used for the fabrication of a heterojunction. The gas phase discharge is investigated by a Langmuir probe and optical emission spectroscopy. The individual layers and the heterojunction are characterized for structural and optoelectronic properties. PPA has polymer-like structure and texture and is characterized by saturated-unsaturated, branched and crosslinked networks. X-ray photoelectron spectroscopy reveals a slightly reduced TiO x surface, which exhibits near band edge luminescence. The free radicals trapped in PPA readily react with oxygen when exposed to atmosphere. The heterojunction shows reverse rectifying characteristics under dark and ultraviolet (UV) irradiation. The energy levels of TiO x and PPA might exhibit reverse band bending and electrons and holes are accumulated on both sides of the heterojunction. The charge accumulation phenomena at the interface may play a key role in the device performance of a hybrid heterojunction. The current-voltage characteristic of the heterojunction is sensitive to UV light, so the structure may be used for photo-sensing applications. (paper)

  20. Effect of CHF3 Plasma Treatment on the Characteristics of SiCOH Low-k Film

    International Nuclear Information System (INIS)

    Xing Zhenyu; Ye Chao; Yuan Jing; Xu Yijun; Ning Zhaoyuan

    2009-01-01

    The characteristics of SiCOH low dielectric constant film treated by a trifluromethane (CHF 3 ) electron cyclotron resonance (ECR) plasma was investigated. The flat-band voltage V FB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF 3 plasma treatment of the SiCOH film led to a reduction in both the flat-band voltage V FB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film's characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C:F deposition at the surface of the SiCOH film.