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Sample records for cupric oxide thin

  1. Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range

    Science.gov (United States)

    Yang, Kungan; Wu, Shuxiang; Yu, Fengmei; Zhou, Wenqi; Wang, Yunjia; Meng, Meng; Wang, Gaili; Zhang, Yueli; Li, Shuwei

    2017-01-01

    Cupric oxide single crystal thin films (~26 nm) were grown by plasma-assisted molecular beam epitaxy. X-ray diffraction, Raman spectra and in situ reflection high-energy electron diffraction show that the thin films are 2  ×  2 reconstructed with an in-plane compression and out-of-plane stretching. A thermal stimulated current measurement indicates that the electric polarization response is shown in the special 2D cupric oxide single crystal thin film over a wide temperature range from 130 K to near-room temperature. We infer that the abnormal electric response involves the changing of phase transition temperature induced by structure distortion, the spin frustration and the magnetic fluctuation effect of a short-range magnetic order, or the combined action of both of the two factors mentioned above. This work suggests a promising clue for finding new room temperature single phase multiferroics or tuning phase transition temperatures.

  2. Magnetic disorder in cupric oxide

    Energy Technology Data Exchange (ETDEWEB)

    Stewart, S.J.; Borzi, R.A.; Mercader, R.C. [Universidad Nacional de La Plata, C.C. 67, Departamento de Fisica, Facultad de Ciencias Exactas (Argentina)

    1999-11-15

    Investigations of the abnormal magnetic properties of cupric oxide reveal discrepancies between both experimental results and theoretical explanations. Through iron-doping cupric oxide by ball-milling and thermal treatments we have been able to obtain Moessbauer results that are an experimental evidence of semi-disorder. The magnetic hyperfine field of the Cu{sub 0.995}Fe{sub 0.005}O solid solution displays a spin-glass-like thermal dependence that undergoes two transitions, one at about 150 K, that can be assigned to the long-range ordering of the cupric oxide spins, and the second one at some temperature between 4.2 and 15 K, that exposes either the freezing of the Fe{sup 3+} spins into a local canted state or of magnetic clusters in the CuO matrix.

  3. Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

    Science.gov (United States)

    Hajakbari, Fatemeh; Shafieinejad, Farzaneh

    2016-03-01

    In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

  4. Effect of Deposition Time on the Photoelectrochemical Properties of Cupric Oxide Thin Films Synthesized via Electrodeposition Method

    Directory of Open Access Journals (Sweden)

    Yaw Chong Siang

    2016-01-01

    Full Text Available The main aim of this study was to investigate the effect of deposition time on the physicochemical and photoelectrochemical properties of cupric oxide (CuO thin films synthesized via electrodeposition method. Firstly, the electrodeposition of amorphous CuO films on fluorine-doped tin oxide (FTO working electrodes with varying deposition time between 5 and 30 min was carried out, followed by annealing treatment at 500 °C. Resultant nanocrystalline CuO thin films were characterised using field emission-scanning electron microscopy (FE-SEM, photocurrent density, and photoluminescence measurements. Through FE-SEM analysis, it was observed that the surface of thin films was composed of irregular-sized CuO nanocrystals. A smaller CuO nanocrystals size will lead to a higher photoactivity due to the increase in overall catalytic surface area. In addition, the smaller CuO nanocrystals size will prolongs the electron-hole recombination rate due to the increase in copious amount of surface defects. From this study, it was revealed that the relationship between deposition time and CuO film thickness was non-linear. This could be due to the detachment of CuO thin films from the FTO surface at an increasing amount of CuO mass being deposited. It was observed that the amount of light absorbed by CuO thin films increased with film thickness until a certain extent whereby, any further increase in the film thickness will result in a reduction of light photon penetration. Therefore, the CuO nanocrystals size and film thickness have to be compromised in order to yield a higher catalytic surface area and a lower rate of surface charge recombination. Finally, it was found that the deposition time of 15 min resulted in an average CuO nanocrystals size of 73.7 nm, optimum film thickness of 0.73 μm, and corresponding photocurrent density of 0.23 mA/cm2 at the potential bias of - 0.3 V (versus Ag/AgCl. The PL spectra for the deposition time of 15 min has the lowest

  5. Photoelectrochemical water splitting for hydrogen production with metal oxide (hematite and cupric oxide) based photocatalysts

    Science.gov (United States)

    Tang, Houwen

    Solar hydrogen is one ideal energy source to replace fossil fuel, as it is sustainable and environmentally friendly. Solar hydrogen can be generated in a number of ways. Photoelectrochemical (PEC) water splitting is one of the most promising methods for solar-to-chemical energy conversion. In this research project, metal oxide-based photocatalysts, especially hematite (α-Fe 2O3) and cupric oxide (CuO), were investigated for use as electrodes in PEC water splitting for solar hydrogen production. In our research project of hematite-based electrodes, we started with the incorporation of transition metal, particularly titanium (Ti), in hematite thin films to modify the valence and conduction band edges of hematite. We found that Ti impurities improve the electron conductivity of hematite and consequently lead to significantly enhanced photocurrents. We further investigated the Ti and Mg co-alloyed hematite. In this case, Ti is the donor and Mg is the acceptor in hematite. The co-alloying approach enhanced the solubility of Mg and Ti, which led to reduced electron effective mass and therefore increased electron mobility. Also, co-alloying tunes the carrier density and therefore allows the optimization of electrical conductivity. The densities of charged defects were found to be reduced, and therefore carrier recombinations were reduced. As a result, the Ti and Mg co-alloyed hematite thin films exhibited much improved performance in PEC water splitting as compared to pure hematite thin films. For the study of cupric oxide-based electrodes, we first investigated the possibility of reducing the electrode corrosion of cupric oxide in aqueous solutions by incorporating Ti as an electrode corrosion inhibitor. We found that Ti alloying can enhance the stability of cupric oxide in base solutions at the cost of reducing its crystallinity and optical absorption, and consequently lowering its photon-to-electron conversion efficiency. In order to balance the stability and the

  6. Thermodynamics of interface formation between Hexa-Peri Hexabenzocoronene and Cupric oxide

    Energy Technology Data Exchange (ETDEWEB)

    Manwani, Krishna; Panda, Emila, E-mail: emila@iitgn.ac.in

    2015-02-27

    A thermodynamic formalism has been developed to predict the formation of an ultra-thin interfacial layer at a solid–solid interface. To derive the thermodynamic expressions at crystalline–crystalline as well as crystalline–amorphous interfaces, as used in this study, Miedema's semi-empirical approach is used. This formalism is then applied to understand the interfacial layer formation between the organic Hexa-Peri Hexabenzocoronene and inorganic Cupric oxide layers at room temperature. It is found that, graphene interfacial layer formation is thermodynamically favorable. This prediction is in agreement with the experimental observations from literature. - Highlights: • Formalism was developed to predict ultra-thin interfacial layer between solids. • This is unique to similar and dissimilar systems with scarce thermodynamic data. • Applicability was tested to Hexa-Peri Hexabenzocoronene–Cupric oxide interface. • Model predicted graphene interfacial layer is concurrent with experimental results.

  7. Stimulated low frequency Raman scattering in cupric oxide nanoparticles water suspension

    Science.gov (United States)

    Averyushkin, A. S.; Baranov, A. N.; Bulychev, N. A.; Kazaryan, M. A.; Kudryavtseva, A. D.; Strokov, M. A.; Tcherniega, N. V.; Zemskov, K. I.

    2017-04-01

    Cupric oxide nanoparticles with average size of 213.2 nm, were synthesized in acoustoplasma discharge for investigating their vibrational properties. The low-frequency acoustic mode in cupric oxide (CuO) nanoparticles has been studied by stimulated low-frequency Raman scattering (SLFRS). SLFRS conversion efficiency, threshold and frequency shift of the scattered light are measured.

  8. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal–semiconductor–metal Schottky photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun, E-mail: lcchao@mail.ntust.edu.tw; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-15

    Highlights: • CuO and Cu{sub 2}O were deposited by reactive ion beam sputter deposition. • Single phase CuO thin film is obtained with Ar:O{sub 2} = 2:1. • CuO MSM PD shows photoresponse from 400 nm to 1.30 μm. • CuO MSM PD is RC limited with a decay time less than 1 μs. - Abstract: Cupric (CuO) and cuprous (Cu{sub 2}O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O{sub 2} ratio from 2:1 to 12:1. With an Ar:O{sub 2} ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu{sub 2}O and Cu{sub 2}O + Cu mixed thin films. As Ar:O{sub 2} ratio reaches 12:1, Cu{sub 2}O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal–semiconductor–metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  9. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  10. The Synthesis of Highly Aligned Cupric Oxide Nanowires by Heating Copper Foil

    Directory of Open Access Journals (Sweden)

    Jianbo Liang

    2011-01-01

    Full Text Available We have investigated the effects of grain size and orientation of copper substrates for the growth of cupric oxide nanowires by thermal oxidation method. Long, less-roughness, high-density, and aligned cupric oxide nanowires have been synthesized by heating (200 oriented copper foils with small grain size in air gas. Long and aligned nanowires of diameter around 80 nm can only be formed within a short temperature range from 400 to 700°C. On the other hand, uniform, smooth-surface, and aligned nanowires were not formed in the case of larger crystallite size of copper foils with (111 and (200 orientation. Smaller grain size of copper foil with (200 orientation is favorable for the growth of highly aligned, smooth surface, and larger-diameter nanowires by thermal oxidation method.

  11. The copper recovery from cupric oxide catalysts by plasma reduction process

    Energy Technology Data Exchange (ETDEWEB)

    Imris, I.; Klenovcanova, A. [Technical Univ. of Kosice, Kosice (Slovakia). Dept. of Power Engineering

    2007-07-01

    A plasma reduction process was used to recover copper from cupric oxide catalysts. Two types of plasma reduction smelting tests were conducted to verify the thermodynamic calculations. The plasma reactor consisted of a cylindrical steel shell lined with a castable alumina and a graphite crucible. Cupric oxide catalyst ESM 461 was mixed with stoichiometric amounts of carbon reductant and a 10 per cent addition of calcium oxide flux. Results of the experimental tests and the thermodynamic analysis showed that the copper can be extracted from cupric oxide using the plasma reduction process. Copper recovery was limited by physico-chemical copper losses. Copper oxide solubility was relatively high, so that copper recovery was low in their first series of plasma tests. The addition of calcium oxide flux improved copper recovery rates when dicalcium silicate was formed in the slag. The offgas samples indicated that concentrations of carbon monoxide (CO) in the gas phase was very high. It was concluded that the process is both commercially feasible and does not produce liquid or solid wastes. 7 refs., 2 tabs., 4 figs.

  12. High gradient magnetic filtration of cupric oxide and fly ash particles

    Energy Technology Data Exchange (ETDEWEB)

    Lua, A.C. [Nanyang Technological University (Singapore). School of Mechanical and Production Engineering

    1996-12-31

    High gradient magnetic filtration (HGMF) tests have been carried out on cupric oxide particles and power plant fly ash which were dispersed in air streams. An experimental test rig was set up to conduct these tests. Results showed that for cupric oxide particles, filtration efficiencies of up to 95% were obtained for submicron sizes with dust loadings of up to 0.36 time the matrix volume. For fly ash, filtration efficiencies of up to 65% were obtained for submicron particles. However, all particle sizes showed progressive deterioration in efficiencies with loading. At the end of the test, the matrix had collected 0.52 times its own mass of fly ash. 2 refs., 7 figs.

  13. In-vacuum scattered light reduction with cupric oxide surfaces for sensitive fluorescence detection

    CERN Document Server

    Norrgard, Eric B; Barry, John F; McCarron, Daniel J; Steinecker, Matthew H; DeMille, David

    2016-01-01

    We demonstrate a simple and easy method for producing low-reflectivity surfaces that are ultra-high vacuum compatible, may be baked to high temperatures, and are easily applied even on complex surface geometries. Black cupric oxide (CuO) surfaces are chemically grown in minutes on any copper surface, allowing for low-cost, rapid prototyping and production. The reflective properties are measured to be comparable to commercially available products for creating optically black surfaces. We describe a vacuum apparatus which uses multiple blackened copper surfaces for sensitive, low-background detection of molecules using laser-induced fluorescence.

  14. Effectiveness of orally administered cupric oxide needles in alleviating hypocupraemia in sheep and cattle.

    Science.gov (United States)

    Suttle, N F

    1981-05-09

    The oral administration of a small dose of cupric oxide "needles" (CuOn), providing 0.5 g copper, to hypocupraemic ewes maintained on a copper-deficient diet alleviated hypocupraemia for 111 days when the diet was supplemented with molybdenum and sulphate and for 301 days when the diet was not supplemented. The same amount of copper given as cupric sulphate was approximately half as effective. The administration of a large dose of CuOn, providing 40 g copper, to hypocupraemic steers and heifers alleviated hypocupraemia for not less than 41 days, at which time a substantial reserve of copper (428 mg) remained in the liver. The absorbability of copper in CuOn was estimated to be 8.3 per cent and 3.8 per cent (depending on diet) for sheep. It was calculated that enough absorbable copper could be provided in a single dose to meet the net copper requirements of ewes for several years. This new form of copper therapy demands a totally different approach from that associated with parenteral copper usage.

  15. High-temperature electromagnons in the magnetically induced multiferroic cupric oxide driven by intersublattice exchange.

    Science.gov (United States)

    Jones, S P P; Gaw, S M; Doig, K I; Prabhakaran, D; Hétroy Wheeler, E M; Boothroyd, A T; Lloyd-Hughes, J

    2014-04-29

    Magnetically induced ferroelectric multiferroics present an exciting new paradigm in the design of multifunctional materials, by intimately coupling magnetic and polar order. Magnetoelectricity creates a novel quasiparticle excitation--the electromagnon--at terahertz frequencies, with spectral signatures that unveil important spin interactions. To date, electromagnons have been discovered at low temperature (domain spectroscopy that intersublattice exchange in the improper multiferroic cupric oxide (CuO) creates electromagnons at substantially elevated temperatures (213-230 K). Dynamic magnetoelectric coupling can therefore be achieved in materials, such as CuO, that exhibit minimal static cross-coupling. The electromagnon strength and energy track the static polarization, highlighting the importance of the underlying cycloidal spin structure. Polarized neutron scattering and terahertz spectroscopy identify a magnon in the antiferromagnetic ground state, with a temperature dependence that suggests a significant role for biquadratic exchange.

  16. Ultra-high performance supercritical fluid chromatography of lignin-derived phenols from alkaline cupric oxide oxidation.

    Science.gov (United States)

    Sun, Mingzhe; Lidén, Gunnar; Sandahl, Margareta; Turner, Charlotta

    2016-08-01

    Traditional chromatographic methods for the analysis of lignin-derived phenolic compounds in environmental samples are generally time consuming. In this work, an ultra-high performance supercritical fluid chromatography method with a diode array detector for the analysis of major lignin-derived phenolic compounds produced by alkaline cupric oxide oxidation was developed. In an analysis of a collection of 11 representative monomeric lignin phenolic compounds, all compounds were clearly separated within 6 min with excellent peak shapes, with a limit of detection of 0.5-2.5 μM, a limit of quantification of 2.5-5.0 μM, and a dynamic range of 5.0-2.0 mM (R(2) > 0.997). The new ultra-high performance supercritical fluid chromatography method was also applied for the qualitative and quantitative analysis of lignin-derived phenolic compounds obtained upon alkaline cupric oxide oxidation of a commercial humic acid. Ten out of the previous eleven model compounds could be quantified in the oxidized humic acid sample. The high separation power and short analysis time obtained demonstrate for the first time that supercritical fluid chromatography is a fast and reliable technique for the analysis of lignin-derived phenols in complex environmental samples.

  17. Orbital driven impurity spin effect on the magnetic order of quasi-3D cupric oxide

    Science.gov (United States)

    Ganga, B. G.; Santhosh, P. N.; Nanda, B. R. K.

    2017-04-01

    Density functional calculations are performed to study the magnetic order of the severely distorted square planar cupric oxide (CuO) and local spin disorder in it in the presence of the transition metal impurities M (=Cr, Mn, Fe, Co and Ni). The distortion in the crystal structure, arisen to reduce the band energy by minimizing the covalent interaction, creates two crisscrossing zigzag spin-1/2 chains. From the spin dimer analysis we find that while the spin chain along ≤ft[1 0 \\bar{1}\\right] has strong Heisenberg type antiferromagnetic coupling (J ~ 127 meV), along ≤ft[1 0 1\\right] it exhibits weak, but robust, ferromagnetic coupling (J ~ 9 meV) mediated by reminiscent p-d covalent interactions. The impurity effect on the magnetic ordering is independent of M and purely orbital driven. If the given spin-state of M is such that the {{d}{{x2}-{{y}2}}} orbital is spin-polarized, then the original long-range ordering is maintained. However, if {{d}{{x2}-{{y}2}}} orbital is unoccupied, the absence of corresponding covalent interaction breaks the weak ferromagnetic coupling and a spin-flip takes place at the impurity site leading to breakdown of the long range magnetic ordering.

  18. One-Step Synthesis of Copper and Cupric Oxide Particles from the Liquid Phase by X-Ray Radiolysis Using Synchrotron Radiation

    Directory of Open Access Journals (Sweden)

    Akinobu Yamaguchi

    2016-01-01

    Full Text Available The deposition of copper (Cu and cupric oxide (Cu4O3, Cu2O, and CuO particles in an aqueous copper sulfate (CuSO4 solution with additive alcohol such as methanol, ethanol, 2-propanol, and ethylene glycol has been studied by X-ray exposure from synchrotron radiation. An attenuated X-ray radiation time of 5 min allows for the synthesis of Cu, Cu4O3, Cu2O, and CuO nano/microscale particles and their aggregation into clusters. The morphology and composition of the synthesized Cu/cupric oxide particle clusters were characterized by scanning electron microscopy, scanning transmission electron microscopy, and high-resolution transmission electron microscopy with energy dispersive X-ray spectroscopy. Micro-Raman spectroscopy revealed that the clusters comprised cupric oxide core particles covered with Cu particles. Neither Cu/cupric oxide particles nor their clusters were formed without any alcohol additives. The effect of alcohol additives is attributed to the following sequential steps: photochemical reaction due to X-ray irradiation induces nucleation of the particles accompanying redox reaction and forms a cluster or aggregates by LaMer process and DLVO interactions. The procedure offers a novel route to synthesize the Cu/cupric oxide particles and aggregates. It also provides a novel additive manufacturing process or lithography of composite materials such as metal, oxide, and resin.

  19. Nanostructured cupric oxide electrode: An alternative to amperometric detection of carbohydrates in anion-exchange chromatography.

    Science.gov (United States)

    Barragan, José T C; Kubota, Lauro T

    2016-02-01

    In this paper, a new and low cost copper/cupric oxide nanostructured electrode is presented as an alternative to the amperometric detection of carbohydrates in high-performance anion exchange chromatography. The modified copper electrodes were prepared by a simple and fast method which resulted in the obtainment of homogeneously distributed nanostructures adhered to the surface with controlled chemical nature. The results, when compared to conventional copper electrodes, exhibited considerable improvements in analytical results, including: 1) Better repeatability in consecutive glucose detections, in which the percent relative standard deviation improved from 15.1% to 0.279%. 2) Significant improvements in the stability of the baseline and a decrease of the stabilization time, going from several hours to approximately 15 min. 3) Considerable increase in the sensitivity towards glucose, from 5.02 nA min mg L(-1) to 25.5 nA min mg L(-1). 4) Improvements in the detectability with limits as low as 1.09 pmol. 5) Wide working range of concentrations (1 × 10(-2) to 1 × 10(4) mg L(-1)). 6) Good linearity with correlation coefficients greater than 0.998. 7) Possibility of detecting different molecules of carbohydrates (lactose, maltose, sucrose cellobiose, sorbitol, fructose, glucose, galactose, manose, arabitol, xylose, ribose and arabnose). In comparison to the electrode that is more employed for this type of application (gold electrode), the low cost, the possibility of detection at constant potential and the equivalent detection limits presented by the new electrode material introduced in this work emerge as characteristics that make this material a powerful alternative considering the detection of carbohydrates in anion exchange chromatography.

  20. Cupric Oxide (CuO) Oxidation Detects Pyrogenic Carbon in Burnt Organic Matter and Soils.

    Science.gov (United States)

    Hatten, Jeff; Goñi, Miguel

    2016-01-01

    Wildfire greatly impacts the composition and quantity of organic carbon stocks within watersheds. Most methods used to measure the contributions of fire altered organic carbon-i.e. pyrogenic organic carbon (Py-OC) in natural samples are designed to quantify specific fractions such as black carbon or polyaromatic hydrocarbons. In contrast, the CuO oxidation procedure yields a variety of products derived from a variety of precursors, including both unaltered and thermally altered sources. Here, we test whether or not the benzene carboxylic acid and hydroxy benzoic acid (BCA) products obtained by CuO oxidation provide a robust indicator of Py-OC and compare them to non-Py-OC biomarkers of lignin. O and A horizons from microcosms were burned in the laboratory at varying levels of fire severity and subsequently incubated for 6 months. All soils were analyzed for total OC and N and were analyzed by CuO oxidation. All BCAs appeared to be preserved or created to some degree during burning while lignin phenols appeared to be altered or destroyed to varying extents dependent on fire severity. We found two specific CuO oxidation products, o-hydroxybenzoic acid (oBd) and 1,2,4-benzenetricarboxylic acid (BTC2) that responded strongly to burn severity and withstood degradation during post-burning microbial incubations. Interestingly, we found that benzene di- and tricarboxylic acids (BDC and BTC, respectively) were much more reactive than vanillyl phenols during the incubation as a possible result of physical protection of vanillyl phenols in the interior of char particles or CuO oxidation derived BCAs originating from biologically available classes of Py-OC. We found that the ability of these compounds to predict relative Py-OC content in burned samples improved when normalized by their respective BCA class (i.e. benzene monocarboxylic acids (BA) and BTC, respectively) and when BTC was normalized to total lignin yields (BTC:Lig). The major trends in BCAs imparted by burning

  1. Mechanistic insights into the oxidation of substituted phenols via hydrogen atom abstraction by a cupric-superoxo complex.

    Science.gov (United States)

    Lee, Jung Yoon; Peterson, Ryan L; Ohkubo, Kei; Garcia-Bosch, Isaac; Himes, Richard A; Woertink, Julia; Moore, Cathy D; Solomon, Edward I; Fukuzumi, Shunichi; Karlin, Kenneth D

    2014-07-16

    To obtain mechanistic insights into the inherent reactivity patterns for copper(I)-O2 adducts, a new cupric-superoxo complex [(DMM-tmpa)Cu(II)(O2(•-))](+) (2) [DMM-tmpa = tris((4-methoxy-3,5-dimethylpyridin-2-yl)methyl)amine] has been synthesized and studied in phenol oxidation-oxygenation reactions. Compound 2 is characterized by UV-vis, resonance Raman, and EPR spectroscopies. Its reactions with a series of para-substituted 2,6-di-tert-butylphenols (p-X-DTBPs) afford 2,6-di-tert-butyl-1,4-benzoquinone (DTBQ) in up to 50% yields. Significant deuterium kinetic isotope effects and a positive correlation of second-order rate constants (k2) compared to rate constants for p-X-DTBPs plus cumylperoxyl radical reactions indicate a mechanism that involves rate-limiting hydrogen atom transfer (HAT). A weak correlation of (k(B)T/e) ln k2 versus E(ox) of p-X-DTBP indicates that the HAT reactions proceed via a partial transfer of charge rather than a complete transfer of charge in the electron transfer/proton transfer pathway. Product analyses, (18)O-labeling experiments, and separate reactivity employing the 2,4,6-tri-tert-butylphenoxyl radical provide further mechanistic insights. After initial HAT, a second molar equiv of 2 couples to the phenoxyl radical initially formed, giving a Cu(II)-OO-(ArO') intermediate, which proceeds in the case of p-OR-DTBP substrates via a two-electron oxidation reaction involving hydrolysis steps which liberate H2O2 and the corresponding alcohol. By contrast, four-electron oxygenation (O-O cleavage) mainly occurs for p-R-DTBP which gives (18)O-labeled DTBQ and elimination of the R group.

  2. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  3. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  4. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  5. Peroxidase-like activity of water-soluble cupric oxide nanoparticles and its analytical application for detection of hydrogen peroxide and glucose.

    Science.gov (United States)

    Chen, Wei; Chen, Juan; Feng, Ye-Bin; Hong, Lei; Chen, Qi-Ying; Wu, Ling-Feng; Lin, Xin-Hua; Xia, Xing-Hua

    2012-04-07

    Water-soluble cupric oxide nanoparticles are fabricated via a quick-precipitation method and used as peroxidase mimetics for ultrasensitive detection of hydrogen peroxide and glucose. The water-soluble CuO nanoparticles show much higher catalytic activity than that of commercial CuO nanoparticles due to their higher affinity to hydrogen peroxide. In addition, the as-prepared CuO nanoparticles are stable over a wide range of pH and temperature. This excellent stability in the form of aqueous colloidal suspensions makes the application of the water-soluble CuO nanoparticles easier in aqueous systems. A colorimetric assay for hydrogen peroxide and glucose has been established based on the catalytic oxidation of phenol coupled with 4-amino-atipyrine by the action of hydrogen peroxide. This analytical platform not only confirms the intrinsic peroxidase-like activity of the water-soluble cupric oxide nanoparticles, but also shows its great potential applications in environmental chemistry, biotechnology and medicine.

  6. Contrasting effects of sulfur dioxide on cupric oxide and chloride during thermochemical formation of chlorinated aromatics.

    Science.gov (United States)

    Fujimori, Takashi; Nishimoto, Yoshihiro; Shiota, Kenji; Takaoka, Masaki

    2014-12-01

    Sulfur dioxide (SO2) gas has been reported to be an inhibitor of polychlorinated dibenzo-p-dioxins and furans (PCDD/Fs) formation in fly ash. However, other research has suggested little or no inhibitory effect of SO2 gas. Although these studies focused on reactions between SO2 gas and gas-phase chlorine (Cl) species, no attention was paid to thermochemical gas-solid reactions. In this study, we found contrasting effects of SO2 gas depending on the chemical form of copper (CuO vs CuCl2) with a solid-phase inorganic Cl source (KCl). Chlorinated aromatics (PCDD/Fs, polychlorinated biphenyls, and chlorobenzenes) increased and decreased in model fly ash containing CuO + KCl and CuCl2 + KCl, respectively, with increased SO2 injection. According to in situ Cu K-edge and S K-edge X-ray absorption spectroscopy, Cl gas and CuCl2 were generated and then promoted the formation of highly chlorinated aromatics after thermochemical reactions of SO2 gas with the solid-phase CuO + KCl system. In contrast, the decrease in aromatic-Cls in a CuCl2 + KCl system with SO2 gas was caused mainly by the partial sulfation of the Cu. The chemical form of Cu (especially the oxide/chloride ratio) may be a critical factor in controlling the formation of chlorinated aromatics using SO2 gas.

  7. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  8. Determination of lignin in marine sediment using alkaline cupric oxide oxidation-solid phase extraction-on-column derivatization-gas chromatography

    Science.gov (United States)

    Zhang, Ting; Li, Xianguo; Sun, Shuwen; Lan, Haiqing; Du, Peirui; Wang, Min

    2013-03-01

    Lignin serves as one of the most important molecular fossils for tracing Terrestrial Organic Matters (TOMs) in marine environment. Extraction and derivatization of lignin oxidation products (LOPs) are crucial for accurate quantification of lignin in marine sediment. Here we report a modification of the conventional alkaline cupric oxide (CuO) oxidation method, the modification consisting in a solid phase extraction (SPE) and a novel on-column derivatization being employed for better efficiency and reproducibility. In spiking blanks, recoveries with SPE for the LOPs are between 77.84% and 99.57% with relative standard deviations (RSDs) ranging from 0.57% to 8.04% ( n=3), while those with traditional liquid-liquid extraction (LLE) are from 44.52% to 86.16% with RSDs being from 0.53% to 13.14% ( n=3). Moreover, the reproducibility is greatly improved with SPE, with less solvent consumption and shorter processing time. The average efficiency of on-column derivatization for LOPs is 100.8% ± 0.68%, which is significantly higher than those of in-vial or in-syringe derivatization, thus resulting in still less consumption of derivatizing reagents. Lignin in the surface sediments sampled from the south of Yangtze River estuary, China, was determined with the established method. Recoveries of 72.66% to 85.99% with standard deviation less than 0.01mg/10g dry weight are obtained except for p-hydroxyben-zaldehyde. The lignin content Σ8 (produced from 10 g dry sediment) in the research area is between 0.231 and 0.587 mg. S/V and C/V ratios (1.028 ± 0.433 and 0.192 ± 0.066, respectively) indicate that the TOMs in this region are originated from a mixture of woody and nonwoody angiosperm plants; the high values of (Ad/Al)v suggest that the TOMs has been highly degraded.

  9. Oxidative leaching process with cupric ion in hydrochloric acid media for recovery of Pd and Rh from spent catalytic converters.

    Science.gov (United States)

    Nogueira, C A; Paiva, A P; Oliveira, P C; Costa, M C; da Costa, A M Rosa

    2014-08-15

    The recycling of platinum-group metals from wastes such as autocatalytic converters is getting growing attention due to the scarcity of these precious metals and the market pressure originated by increase of demand in current and emerging applications. Hydrometallurgical treatment of such wastes is an alternative way to the most usual pyrometallurgical processes based on smelter operations. This paper focuses on the development of a leaching process using cupric chloride as oxidising agent, in HCl media, for recovery of palladium and rhodium from a spent catalyst. The chloride media allows the adequate conditions for oxidising and solubilising the metals, as demonstrated by equilibrium calculations based on thermodynamic data. The experimental study of the leaching process revealed that Pd solubilisation is clearly easier than that of Rh. The factors temperature, time, and HCl and Cu(2+) concentrations were significant regarding Pd and Rh leaching, the latter requiring higher factor values to achieve the same results. Leaching yields of 95% Pd and 86% Rh were achieved under optimised conditions (T = 80 °C, t = 4h, [HCl] = 6M, [Cu(2+)] = 0.3M).

  10. Oxidative leaching process with cupric ion in hydrochloric acid media for recovery of Pd and Rh from spent catalytic converters

    Energy Technology Data Exchange (ETDEWEB)

    Nogueira, C.A., E-mail: carlos.nogueira@lneg.pt [Laboratório Nacional de Energia e Geologia, I.P., Campus do Lumiar, 1649-038 Lisboa (Portugal); Paiva, A.P., E-mail: appaiva@fc.ul.pt [Centro de Química e Bioquímica, Departamento de Química e Bioquímica, Faculdade de Ciências da Universidade de Lisboa, 1749-016 Lisboa (Portugal); Oliveira, P.C. [Laboratório Nacional de Energia e Geologia, I.P., Campus do Lumiar, 1649-038 Lisboa (Portugal); Costa, M.C., E-mail: mcorada@ualg.pt [Centro de Ciências do Mar, Departamento de Química e Farmácia, Faculdade de Ciências e de Tecnologia, Campus de Gambelas, 8005-139 Faro (Portugal); Costa, A.M. Rosa da, E-mail: amcosta@ualg.pt [Centro de Investigação em Química do Algarve, Departamento de Química e Farmácia, Faculdade de Ciências e de Tecnologia, Campus de Gambelas, 8005-139 Faro (Portugal)

    2014-08-15

    Highlights: • A new leaching process based on Cu{sup 2+}/HCl media for recovering Pd and Rh from spent autocatalytic converters is presented. • Palladium and rhodium were efficiently leached, with attained maximum yields of 95% and 86%, respectively. • Temperature, time, and HCl and Cu{sup 2+} concentrations were found to be significant factors in the leaching of Pd and Rh. - Abstract: The recycling of platinum-group metals from wastes such as autocatalytic converters is getting growing attention due to the scarcity of these precious metals and the market pressure originated by increase of demand in current and emerging applications. Hydrometallurgical treatment of such wastes is an alternative way to the most usual pyrometallurgical processes based on smelter operations. This paper focuses on the development of a leaching process using cupric chloride as oxidising agent, in HCl media, for recovery of palladium and rhodium from a spent catalyst. The chloride media allows the adequate conditions for oxidising and solubilising the metals, as demonstrated by equilibrium calculations based on thermodynamic data. The experimental study of the leaching process revealed that Pd solubilisation is clearly easier than that of Rh. The factors temperature, time, and HCl and Cu{sup 2+} concentrations were significant regarding Pd and Rh leaching, the latter requiring higher factor values to achieve the same results. Leaching yields of 95% Pd and 86% Rh were achieved under optimised conditions (T = 80 °C, t = 4 h, [HCl] = 6 M, [Cu{sup 2+}] = 0.3 M)

  11. A simple, fast and cost-effective method of synthesis of cupric oxide nanoparticle with promising antibacterial potency: Unraveling the biological and chemical modes of action.

    Science.gov (United States)

    Chakraborty, Ruchira; Sarkar, Raj Kumar; Chatterjee, Arijit Kumar; Manju, Unnikrishnan; Chattopadhyay, Asoke Prasun; Basu, Tarakdas

    2015-04-01

    Gradual attainment of bacterial resistance to antibiotics led us to develop a robust method of synthesis of stable, colloidal cupric oxide nanoparticle of physiological pH with potential antibacterial action. Cu(II) oxide NP was synthesized by reduction-oxidation of CuCl2, using polyvinyl alcohol as stabilizer. Characteristics and antibacterial activity of the particles were investigated by techniques like UV-Vis spectrophotometry, DLS, AFM, TEM, EDS, FTIR, AAS, agar plating, FACS, gel electrophoresis and XPS. The NPs were about 50 nm in size and cubic in shape with two surface plasmon peaks at 266 and 370 nm and had semi-conducting behavior with a band gap of 3.40 and 3.96 eV. About 80% of precursor CuCl2 was converted to NP. The minimum inhibitory and the minimum bactericidal concentrations of CuO-NP were respectively 120 and 160 μg/mL for Escherichia coli and 180 and 195 μg/mL for Staphylococcus aureus in Luria-Bertani medium. In growth media, the NPs got modified by media organics with displacement of the stabilizer PVA molecules. This modified NP (around 240 nm) killed cells by generating ROS, which finally caused membrane lipid per-oxidation and chromosomal DNA degradation in NP-treated cells. Reports indicate that we are among the few who had prepared CuO-NP in colloidal form. The antibacterial potency of our particle in growth media was much promising than other reports. Our findings demonstrated that 'particle-specific' effect, not 'ion-specific' one, was responsible for the NP action. The NP may be used as a sterilizing agent in various bioprocesses and as substituent of antibiotics, after thorough toxicological study. Copyright © 2015 Elsevier B.V. All rights reserved.

  12. Long-term effects of cupric oxide nanoparticles (CuO NPs) on the performance, microbial community and enzymatic activity of activated sludge in a sequencing batch reactor.

    Science.gov (United States)

    Wang, Sen; Li, Zhiwei; Gao, Mengchun; She, Zonglian; Ma, Bingrui; Guo, Liang; Zheng, Dong; Zhao, Yangguo; Jin, Chunji; Wang, Xuejiao; Gao, Feng

    2017-02-01

    The long-term effects of cupric oxide nanoparticles (CuO NPs) on the performance, microbial activity and microbial community of activated sludge were investigated in a sequencing batch reactor (SBR). The SBR performance had no evident change at 0-10 mg/L CuO NPs, whereas the CuO NPs concentration at 30-60 mg/L affected the COD, NH4(+)-N and soluble orthophosphate (SOP) removal, nitrogen and phosphorus removal rate and microbial enzymatic activity of activated sludge. Some CuO NPs might be absorbed on the surface of activated sludge or penetrate the microbial cytomembrane into the microbial cell interior of activated sludge. Compared to 0 mg/L CuO NPs, the reactive oxygen species (ROS) production and lactate dehydrogenase (LDH) release increased by 43.6% and 56.4% at 60 mg/L CuO NPs, respectively. The variations of ROS production and LDH release demonstrated that CuO NPs could induce the toxicity towards the microorganisms and destroy the integrity of microbial cytomembrane in the activated sludge. High throughput sequencing of 16S rDNA indicated that CuO NPs could evidently impact on the microbial richness, diversity and composition of activated sludge in the SBR.

  13. Polyethylene glycol grafted flower-like cupric nano oxide for the hollow-fiber solid-phase microextraction of hexaconazole, penconazole, and diniconazole in vegetable samples.

    Science.gov (United States)

    Zendegi-Shiraz, Amene; Sarafraz-Yazdi, Ali; Es'haghi, Zarrin

    2016-08-01

    A simple, rapid, highly efficient, and reliable sample preparation method has been developed for the extraction and analysis of triazole pesticides from cucumber, lettuce, bell pepper, cabbage, and tomato samples. This new sorbent in the hollow-fiber solid-phase microextraction method is based on the synthesis of polyethylene glycol-polyethylene glycol grafted flower-like cupric oxide nanoparticles using sol-gel technology. Afterward, the analytes were analyzed by high-performance liquid chromatography with ultraviolet detection. The main parameters that affect microextraction efficiency were evaluated and optimized. This method has afforded good linearity ranges (0.5-50 000 ng/mL for hexaconazol, 0.012-50 000 ng/mL for penconazol, and 0.02-50 000 ng/mL for diniconazol), adequate precision (2.9-6.17%, n = 3), batch-to-batch reproducibility (4.33-8.12%), and low instrumental LODs between 0.003 and 0.097 ng/mL (n = 8). Recoveries and enrichment factors were 85.46-97.47 and 751-1312%, respectively.

  14. Adsorptive Removal of Benzene and Toluene from Aqueous Environments by Cupric Oxide Nanoparticles: Kinetics and Isotherm Studies

    Directory of Open Access Journals (Sweden)

    Leili Mohammadi

    2017-01-01

    Full Text Available Removal of benzene and toluene, as the major pollutants of water resources, has attracted researchers’ attention, given the risk they pose to human health. In the present study, the potential of copper oxide nanoparticles (CuO-NPs in eliminating benzene and toluene from a mixed aqueous solution was evaluated. For this, we performed batch experiments to investigate the effect of solution pH (3–13, dose of CuO-NPs (0.1–0.8 g, contact time (5–120 min, and concentration of benzene and toluene (10–200 mg/l on sorption efficiency. The maximum removal was observed at neutral pH. By using the Langmuir model, we measured the highest adsorption capacity to be 100.24 mg/g for benzene and 111.31 mg/g for toluene. Under optimal conditions, adsorption efficiency was 98.7% and 92.5% for benzene and toluene, respectively. The sorption data by CuO-NPs well fitted into the following models: Langmuir, Freundlich, Temkin, and Dubinin-Radushkevich model. The experimental information well fitted in the Freundlich for benzene and Langmuir for toluene. Based on the results, adsorption followed pseudo-second-order kinetics with acceptable coefficients. The findings introduced CuO-NPs as efficient compounds in pollutants adsorption. In fact, they could be used to develop a simple and efficient pollutant removal method from aqueous solutions.

  15. Large-scale and green synthesis of octahedral flower-like cupric oxide nanocrystals with enhanced photochemical properties

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shi-Kuo; Pan, Yu-Yi; Wu, Mi; Huang, Fang-Zhi; Li, Chuan-Hao, E-mail: lichuanhao1983@163.com; Shen, Yu-Hua, E-mail: s_yuhua@163.com

    2014-10-01

    Graphical abstract: - Highlights: • A green method is reported for large-scale synthesis of CuO nanocrystals via a coordination-deposition technique. • Flower-like nanostructure can be rationally tailored by adjusting reaction parameters. • Flower-like nanostructure can be obtained in a wide reaction solution volume range. • Uniform flower-like nanocrystal film assembled by oil–water interfacial self-assembly method exhibits excellent PEC performance. - Abstract: In this work, a large-scale and green method is reported for the facile synthesis of octahedral flower-like CuO nanocrystals via a coordination-deposition route by using Fehling regents. Not any harmful organic chemicals were used during the reaction period. The obtained hierarchical nanostructure can be rationally tailored by varying the concentration of tartrate ions and reaction time. The typical flower-like CuO nanocrystals in the range of 200–250 nm are consisted of numerous small crystalline whiskers, which present a porous surface with a specific surface area of 32.12 m{sup 2}/g and a narrow band gap of 1.5 eV. Importantly, the flower-like CuO nanocrystals show an enhanced photocatalytic activity toward decomposing Rhodamine B (RhB) molecules. The degradation rate is about 87.9% in 40 min under visible light irradiation, which is about 2.5 times for the commercial CuO powers (35.2%). Moreover, the uniform flower-like monolayered CuO film exhibits an excellent photoelectrochemical (PEC) performance with a maximum photocurrent density of 58.8 μA/cm{sup 2}, which is nearly five times higher than the commercial CuO film. This novel synthesis approach provides a large-scale and green protocol for synthesizing hierarchical metal oxide nanocrystals that are useful for photocatalysis, PEC water splitting and photovoltaic device.

  16. Catalytic Decomposition of Nitric Oxide over Nano-sized PbTiO3 Supported Cupric Oxide%纳米晶PbTiO3负载CuO催化NO分解

    Institute of Scientific and Technical Information of China (English)

    邢丽; 薛念华; 陈向科; 郭学锋; 丁维平; 陈懿

    2005-01-01

    A large specific surface area perovskite-type mixed oxide PbTiO3 supported cupric oxide was synthesized as a catalyst for NO decomposition and characterized by techniques such as XPS, XRD,H2-TPR before and after NO deconlposition reactions. The catalytic properties were tested with a fix-bed micro-reactor. The results showed that the PbTiO3 was inactive for the reactions, but 1wt % Cu/PbTiO3 catalyst gave fairly good activities for NO decomposition at temperature as low as 473K. Copper species were found well-dispersed but weakly interacted with the support before NO decomposition, and the NO decomposition caused significant change in the environment of the copper species, which became Cu(Ⅰ) and most probably incorporated into surface crystal lattice of the nano-sized PbTiO3. In NO reaction, a large amount of oxygen atoms from the decomposition of NO penetrated into the nano-sized PbTiO3 support and caused small expansion of crystal lattice. The transport of oxygen between the copper species and the catalyst support may be helpful to speed up the kinetic regeneration of active metal sites from oxygen occupancy and resulted in good catalytic performance.

  17. Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Yildirim, Nurcan [Department of Physics Engineering, Ankara University, 06100 Ankara (Turkey); Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2014-10-15

    In this study, effect of the post-deposition thermal annealing on copper oxide thin films has been systemically investigated. The copper oxide thin films were chemically deposited on glass substrates by spin-coating. Samples were annealed in air at atmospheric pressure and at different temperatures ranging from 200 to 600°C. The microstructural, morphological, optical properties and surface electronic structure of the thin films have been studied by diagnostic techniques such as X-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV–VIS) absorption spectroscopy, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the films was about 520 nm. Crystallinity and grain size was found to improve with annealing temperature. The optical bandgap of the samples was found to be in between 1.93 and 2.08 eV. Cupric oxide (CuO), cuprous oxide (Cu{sub 2}O) and copper hydroxide (Cu(OH){sub 2}) phases were observed on the surface of as-deposited and 600 °C annealed thin films and relative concentrations of these three phases were found to depend on annealing temperature. A complete characterization reported herein allowed us to better understand the surface properties of copper oxide thin films which could then be used as active layers in optoelectronic devices such as solar cells and photodetectors. - Highlights: • Effect of post-deposition annealing on copper oxide thin films was investigated. • Structural, optical, and electronic properties of the thin films were determined. • Oxidation states of copper oxide thin films were confirmed by XPS analysis. • Mixed phases of CuO and Cu{sub 2}O were found to coexist in copper oxide thin films.

  18. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  19. Role of oxygen flow rate on the structural and optical properties of copper oxide thin films grown by reactive magnetron sputtering

    Science.gov (United States)

    Ali, M.; Gobinner, C. R.; Kekuda, D.

    2016-02-01

    Copper oxide thin films were grown by DC reactive magnetron sputtering. The structural investigation of the sputtered films was carried out using X-ray diffraction. The surface morphology of the films was observed through atomic force microscopy. A crossover in the crystalline phase from cuprous to cupric oxide (tenorite) was observed as a result of variation in the oxygen flow rate during sputtering. Deposition rate was also found to be a function of the oxygen flow rate, and it was found that the deposition rate decreased with an increase in the oxygen flow rate which could be attributed to the possible target oxidation at higher oxygen flow rates. Variation of grain size of the films with oxygen flow rate was analyzed through AFM analysis. Dependence of oxygen flow rate on the formation of two phases of copper oxide was also confirmed through the optical band gap measurements.

  20. 氯化铜脱除硫化氢气体制硫磺研究%H2S Removal with Cupric Chloride for Producing Sulfur

    Institute of Scientific and Technical Information of China (English)

    张俊丰; 童志权

    2006-01-01

    A novel technology of removing H2S with cupric chloride solution was developed in this paper. Cupric as the form of CuS deposition, the CuS produced was then oxidized by excessive cupric ion in another reactor meanwhile cupric ion that has been consumed can be recovered by the oxidization of CuCl2- with oxygen in air,and the solution can be circulated. Moreover, the leaching kinetics of CuS by cupric ion was studied. The removal efficiency of H2S is close to 100%, and the required operating condition is mild. Compared with other wet oxidization methods, no raw material is consumed except O2 in air, the process has no secondary pollution and no problem of degradation and scale, and the absorbent is much stable and reliable.

  1. Substrate effects on SILAR route synthesized CuO thin films

    Science.gov (United States)

    Dhanasekaran, V.; Mahalingam, T.; Ravi, G.; Rhee, Jin-Koo

    2012-06-01

    Cupric oxide (CuO) thin films are deposited using SILAR method onto various substrates. The X-ray diffraction patterns revealed that the deposited films are polycrystalline in nature with monoclinic structure. The microstructural parameters of chemical bath deposited CuO thin films are calculated using the structural studies. The optical band gap value is determined using transmission spectrum of CuO thin films and the results are discussed.

  2. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  3. PREPARATION OF BENZIL BY OXIDIZING BENZOIN WITH CUPRIC NITRATE%硝酸铜氧化安息香制备苯偶酰

    Institute of Scientific and Technical Information of China (English)

    文瑞明; 丁亮中; 罗新湘; 俞善信

    2003-01-01

    @@ INTRODUCTION Benzil is an important photosensitive initiator of organic synthesis intermediates, medicinal intermediates and ultraviolet solidified resin(UV resin), and is usually prepared by oxidizing benzoin. The oxidizers and methods reported are mainly: (PhCH2Et3N)+Br-/(PhCO)2O2/MeCN[1], DMSO/(COCl)2/CH2Cl2[2], CrO3*CH3NH2*HCl/Al2O3[3], the metallorganic compound[4], microwave radiation[5],etc.

  4. Electrochromism in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  5. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2012-01-15

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  6. Sprayed lanthanum doped zinc oxide thin films

    Science.gov (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  7. Lead Nitrate Titration Determination of Cupric Oxide in Extension of Delay Powder%硝酸铅滴定法测定延期药中氧化铜

    Institute of Scientific and Technical Information of China (English)

    王风清; 董男平; 崔丽梅; 国飞; 朱晓莉

    2014-01-01

    以硝酸和H2O2对延期药中铅化合物和氧化铜完成溶解,通过硫脲释放,采用硝酸铅滴定法测定延期药中的氧化铜。加入30 mL HNO3溶液(1+8)和15 mL六次甲基四胺控制样品溶液为pH 5~6。结果表明,方法的回收率为98.8%~99.9%,测定结果的相对标准偏差为0.12%~0.2%(n=6)。该方法准确可靠,可用于延期药中氧化铜分析。%Copper oxide and lead compounds in delay powder were dissolved by nitric acid and H2O2,and released by thiourea,then copper oxide was determined with lead nitrate titration method. Sample solution was controlled as pH 5-6 by adding 30 mL HNO3 solution (1+8) and 15 mL hexamethylenetetramine. The results showed that the recoveries were 98.8%-99.9%,and the relative standard deviations of determination results were 0.12%-0.2%(n=6). The method is accurate,reliable,and suitable to determine copper oxide in delay powder.

  8. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  9. Synthesis and fabrication of graphene oxide thin film

    Science.gov (United States)

    Kadam, Mahesh M.; Sravani, Medha B.; Gaikar, V. G.; Jha, Neetu

    2013-06-01

    The primary aim of the investigation is to synthesize graphene oxide at room temperature and fabricate a flexible free standing graphene oxide thin film. Modified Hummers technique was employed for the synthesis of graphene oxide using graphite as the starting material. Graphene oxide is a layered material consisting of hydrophilic oxygenated functional groups on their basal planes and edges. Graphene-oxide thin film has been fabricated via solvent-evaporation technique. Functional, elemental and structural analysis of the samples was performed using several characterization techniques.

  10. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  11. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  12. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  13. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  14. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  15. Spatial atomic layer deposition of zinc oxide thin films

    NARCIS (Netherlands)

    Illiberi, A.; Roozeboom, F.; Poodt, P.W.G.

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and mo

  16. Honeycomb Cupric Oxide and Hematite Nanotubes Synergism Photoelectro-reduction CO2%蜂窝状CuO和Fe2O3纳米管协同光电还原CO2

    Institute of Scientific and Technical Information of China (English)

    王祜英; 徐金凤; 井华; 张军; 李培强; 路福绥

    2013-01-01

    采用阳极氧化法在Fe上原位生长直立有序的Fe2O3纳米管阵列,脉冲电沉积法将蜂窝状CuO组装到Fe2O3NTs上,得到CuO HCs/Fe2O3NTs催化剂.结果表明:Fe2O3NTs呈“火山状”规则生长,蜂窝状CuO均匀分布在Fe2O3 NTs表面.修饰后,材料的能隙由原来的2.03 eV窄化为1.84 eV.同时发现该催化剂具有优良的光催化还原性能和电催化还原性能,光电催化还原CO2的主要生成产物为甲醇,甲醇在6h时含量峰值为3.77 mmol/L.该研究对光电催化还原CO2有一定的指导和借鉴意义.%Vertically aligned Fe2O3 nanotubes (Fe2O3 NTs) arrays were prepared on the iron foil by potentiostatic anodization method.The anodization experiments were performed under 30 V for 2 h (20 ℃).The ferrous foil was working electrode and titanium foil was counter electrode.The electrolytes were consisted of 0.25 wt% NH4F in an aqueous solution (Volume of water:glycol=3.:97).After sonicating for 5 min,the samples were put under oxygen atmosphere with the flow rate of 60 seem (standard cubic centimeters/min) and heated to 500 ℃ with the rate of 3 ℃.min-1 and maintained at 500 ℃ for 2 h.Then cooled to room temperature with the rate of 3 ℃.min-1.Honeycomb structure cupric oxide (CuO HCs) were decorated on the surface of Fe2O3 NTs by the pulse electrochemical deposition method.This was done by CHI660D potentiostat in 1 mol.L-1 CuSO4 solution (40 ℃) in a three-electrode configuration.The Fe2O3 NTs electrode worked as counter electrode,Hg/Hg2Cl2 in saturated KCl solution as reference electrode,and platinum wire as working electrode,respectively.A 10 ms cathodic pulse with a current density of-70 mA.cm-2 was employed.After that followed by a 1 ms anodic pulse and its density was +70 mA.cm-2 to prevent damage of the Fe2O3 NTs structure.Finally was a 1000 ms rest time.The electrodeposition time was 36 s,with a forward duty cycle of 0.99% (considering cathodic,anodic and rest components).Then the samples were

  17. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  18. Characterization of reliability of printed indium tin oxide thin films.

    Science.gov (United States)

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  19. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  1. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    the increase in ionized impurity scattering.       Figure 1.48: Resistivity versus %Ga [125]  ZnO:Ga films were also  deposited  by  spray   pyrolysis ...Ilican  [137]  deposited   In‐doped  ZnO  thin  films  onto  glass  substrates  by  the  spray   pyrolysis   method at 350 oC substrate temperature. The...structure  of  ZnO  presented  the  following  findings:     The Polycrystalline ZnO  thin  films were  deposited  on a glass  substrate by a  spray

  2. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  3. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...... dielectric strength and the pinhole density for 0.5 μm thick films is below 3 cm-2...

  4. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  5. Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-01-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO3 thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was

  6. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  7. Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.

    Science.gov (United States)

    Rembert, Thomas; Battaglia, Corsin; Anders, André; Javey, Ali

    2015-10-28

    A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.

  8. Synthesis and characterization of composite polymer, polyethylene glycol grafted flower-like cupric nano oxide for solid phase microextraction of ultra-trace levels of benzene, toluene, ethyl benzene and o-xylene in human hair and water samples.

    Science.gov (United States)

    Sarafraz-Yazdi, Ali; Zendegi-Shiraz, Amene; Es'haghi, Zarrin; Hassanzadeh-Khayyat, Mohammad

    2015-10-30

    In this research, poly (ethylene glycol)-poly (ethylene glycol) grafted flower-like cupric oxidenano particles (PEG-PEG-g-CuO NPs) as a novel fiber coating of solid-phase microextraction (SPME) were synthesized by using sol-gel technology. This fiber was successfully applied to extract and determine the ultra-trace levels of benzene, toluene, ethyl benzene and o-xylene in human hair using head space-solid-phase microextraction (HS-SPME) coupled to gas chromatography-flame ionization detector. Characterization and chemical composition of the nano particle was performed by Fourier transform infrared spectroscopy (FT-IR), energy dispersion spectroscopy (EDS) and back scatter analysis (BSA). These methods confirmed the successful fabrication of PEG-g-CuO NPs. The surface morphology of the fibers were inspected by scanning electron microscopy. The scanning electron microscopy (SEM) revealed many "crack-like" features and highly porous structure on the surface of fiber. The synthesized nanocomposites were used for preconcentration and extraction of benzene, toluene, ethyl benzene and o-xylene (BTEX). The effects of operating parameters such as: desorption temperature and time, extraction temperature, extraction time, stirring speed and salt effect were investigated and optimized. Under the optimal conditions, the method detection limits and the limits of quantification were between 0.00025-50.00000pgmL(-1) and 0.00200-200.00000pgmL(-1), respectively. Linearity was observed over a range 0.00200-200000.00000pgmL(-1). The relative standard deviations for one fiber (repeatability; n=5) were obtained from 3.30 up to 5.01% and between fibers or batch to batch (n=3; reproducibility) in the range of 3.63-6.21%. The developed method was successfully applied to simultaneous determination of BTEX in human hairs, tap water and distillate water.

  9. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  10. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    P Samarasekara; N U S Yapa; N T R N Kumara; M V K Perera

    2007-04-01

    For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8.5 mbar for 18 h. Argon and oxygen gases were used as sputtering and reactive gases, respectively. ZnO phase could be crystallized using a pure metal target of zinc. The structure of the films determined by means of X-ray diffraction method indicates that the zinc oxide single phase can be fabricated in this substrate temperature range. The sensitivity of the film synthesized at substrate temperature of 130°C is 2.17 in the presence of CO2 gas at a measuring temperature of 100°C.

  11. Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

    Science.gov (United States)

    Zhu, Changqiong

    basic lactate solution with a large lactate/Cu2+ molar ratio, are sodium-free. This finding stands in contrast to the observation that films grown in basic solution contain a significant amount of sodium impurity at their top surfaces. Therefore, it is concluded that the sodium impurities present in films grown from basic lactate solutions are detrimental to overall photovoltaic device performance by introducing interface traps and recombination centers for charge carriers, which suggests that removing these impurities may be a promising strategy for improving Cu2O based solar cells. It has been found that impurities at the surface of electrodeposited p-Cu2O films can be efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of Cu 2O homojunction photovoltaic devices incorporating etched p-Cu 2O as the bottom layer is higher compared to devices with as-deposited p-Cu2O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers is found to lead to larger open circuit voltages. Zinc-doped cuprous oxide (Zn:Cu2O) thin films have also been prepared via single step electrodeposition from an aqueous solution containing sodium perchlorate. The Zn/Cu molar ratio in the Cu2O films can be tuned by adjusting the magnitude of the applied potential and the sodium perchlorate concentration. Electrical characterization reveals that zinc dopants increase the Fermi level in Zn:Cu2O films, enabling a three-fold improvement in the power conversion efficiency of a fully electrodeposited Cu2O homojunction photovoltaic device. Complementary to the development of Cu2O based photovoltaic devices, the use of solution deposited cupric oxide (CuO) thin films for capacitive energy storage has also been investigated. A seed layer-assisted chemical bath deposition (SCBD) method has been developed to create high quality CuO thin films on transparent

  12. Altering properties of cerium oxide thin films by Rh doping

    Energy Technology Data Exchange (ETDEWEB)

    Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Haviar, Stanislav, E-mail: stanislav.haviar@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Matolín, Vladimír, E-mail: matolin@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  13. Thin film zinc oxide deposited by CVD and PVD

    Science.gov (United States)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  14. The influence of cupric ions on shape of potentiodynamic curves obtained on 18 K gold

    Directory of Open Access Journals (Sweden)

    Rajčić-Vujasinović Mirjana

    2002-01-01

    Full Text Available The shape of potentiodynamic curves depends mainly on the composition of investigated alloys, but also on the electrolyte used in experiments. In this work investigation were performed for pure gold, and pure silver and copper as alloying metals, then for binary alloys Au-Ag and Au-Cu containing gold as in 18 k gold (i.e. 75 % Au and Ag-Cu with mass ratio 1:1 and, finally, for three component 18 k gold. It was established a catalytic effect of cupric ions present in electrolyte on oxidation of gold and 18 k gold alloys.

  15. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    Directory of Open Access Journals (Sweden)

    A. Tiwari

    2013-11-01

    Full Text Available This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  16. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A., E-mail: abhishektiwariiitr@gmail.com [Groupe d’Etudes des Matériaux Hétérogènes (GEMH, EA 3178), Ecole Nationale Supérieure de Céramique Industrielle, 12, Rue Atlantis, 87068 Limoges Cedex (France); Department of Mechanical and Aerospace Engineering, Monash University, Melbourne, VIC 3800 (Australia); Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P. [Groupe d’Etudes des Matériaux Hétérogènes (GEMH, EA 3178), Ecole Nationale Supérieure de Céramique Industrielle, 12, Rue Atlantis, 87068 Limoges Cedex (France)

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  17. Nanostructured zinc oxide thin film by simple vapor transport deposition

    Science.gov (United States)

    Athma, P. V.; Martinez, Arturo I.; Johns, N.; Safeera, T. A.; Reshmi, R.; Anila, E. I.

    2015-09-01

    Zinc oxide (ZnO) nanostructures find applications in optoelectronic devices, photo voltaic displays and sensors. In this work zinc oxide nanostructures in different forms like nanorods, tripods and tetrapods have been synthesized by thermal evaporation of zinc metal and subsequent deposition on a glass substrate by vapor transport in the presence of oxygen. It is a comparatively simpler and environment friendly technique for the preparation of thin films. The structure, morphology and optical properties of the synthesized nanostructured thin film were characterized in detail by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The film exhibited bluish white emission with Commission International d'Eclairage (CIE) coordinates x = 0.22, y = 0.31.

  18. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

    Energy Technology Data Exchange (ETDEWEB)

    Lad, Robert J.

    1999-12-14

    This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with film microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.

  19. Growth of oxide thin films for optical gas sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Caiteanu, D. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Gyoergy, E. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania)]. E-mail: eniko@ifin.nipne.ro; Grigorescu, S. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Mihailescu, I.N. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Prodan, G. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania); Ciupina, V. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania)

    2006-04-30

    Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* ({lambda} = 248 nm, {tau} {sub FWHM} {approx_equal} 20 ns, {nu} = 2 Hz) excimer laser source, at 2 J/cm{sup 2} incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO{sub 2} substrates were heated during the thin film deposition process at temperature values within the 300-500 deg. Crange. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 deg. Care crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.

  20. Stannic oxide thin film growth via ion-beam-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Martin; Hamann, Robert; Polity, Angelika; Meyer, Bruno K.

    2014-02-28

    Stannic oxide (SnO{sub 2}) is of great technological interest as a member of the important family of oxide materials that combine low electrical resistance with high optical transparency in the visible range of the electromagnetic spectrum. Tin oxide thin films are grown on sapphire substrates by ion beam sputtering method with varying heater temperature from 100 to 750 °C at constant gas flux. Enhancement of crystallinity of thin films with temperature is observed from X-ray diffraction and Raman spectroscopy studies. Morphological studies by atomic force microscopy reveal changes in grain size with variation in substrate temperature. - Highlights: • Polycrystalline SnO{sub 2} thin films were grown on sapphire by ion beam sputtering. • Self-designed ion thrusters can be used as ion sources in material processing. • Precise control of heater temperature is crucial to attain transparent SnO{sub 2} films. • Higher heater temperature enhances film quality indicated by smaller FWHM in XRD.

  1. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  2. Nanostructured thin solid oxide fuel cells with high power density.

    Science.gov (United States)

    Ignatiev, Alex; Chen, Xin; Wu, Naijuan; Lu, Zigui; Smith, Laverne

    2008-10-28

    Nanostructured thin film solid oxide fuel cells (SOFC) have been developed for reduced temperature operation, with high power density, and to be self reforming. A thin film electrolyte (1-2 microm thickness), e.g., yttria-stabilized zirconia (YSZ), is deposited on a nickel foil substrate. The electrolyte thin film is polycrystalline when deposited on a polycrystalline nickel foil substrate, and is (100) textured when deposited on an atomically textured nickel foil substrate. The Ni foil substrate is then converted into a porous SOFC anode by photolithographic patterning and etching to develop porosity. A composite La(0.5)Sr(0.5)CoO(3) cathode is then deposited on the thin film electrolyte. The resultant thin film hetero structure fuel cells have operated at a significantly reduced temperature: as low as 470 degrees C, with a maximum power density of 140 mW cm(-2) at 575 degrees C, and an efficiency of >50%. This drastic reduction in operating temperature for an SOFC now also allows for the use of hydrocarbon fuels without the need for a separate reformer as the nickel anode effectively dissociates hydrocarbons within this temperature range. These nanostructured fuel cells show excellent potential for high power density, small volume, high efficiency fuel cells for power generation applications.

  3. Oxidation and growth of Mg thin films on Ru(001)

    Science.gov (United States)

    Huang, H. H.; Jiang, X.; Siew, H. L.; Chin, W. S.; Sim, W. S.; Xu, G. Q.

    1999-08-01

    The oxidation and growth of ultra-thin Mg films on a Ru(001) substrate have been studied using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) in the temperature range of 300-1500 K. Our results suggest that the growth of Mg thin films follows a layer-by-layer mode. Upon oxygen adsorption at 300 K, two O 1s peaks were detected on the Mg film. The peak at 532.2-532.6 eV could be attributed to either dioxygen or partially reduced species (O δ-, δfilm to 800 K causes the conversion of the dioxygen or partially reduced species to the oxide state. Thermal desorption peaks of MgO were directly detected at 1000-1127 and 1350-1380 K, respectively. However, initial evaporation of Mg atoms onto an oxygen pre-adsorbed surface yields a fully oxidized MgO. Further Mg deposition results in the formation of a partially oxidized film with the observation of an O 1s peak at 532.2 eV.

  4. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  5. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  6. Mechanism Study of Reversible Resistivity Change in Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.; Chang, S. H.; Phatak, C.; Magyari-Kope, Blanka; Nishi, Y; Chattopadhyay, Soma; Kim, Jung Ho

    2015-01-01

    Here we present our findings related to the mechanism of reversible resistivity in Pt/TiO2/Pt cells and in Ta2O5 thin films. Our findings for Pt/TiO2/Pt cells indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging x-rays. We found that this effect, combined with the x-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a non-volatile reversible resistance change. For Ta2O5 thin films, we found that there are strong correlations among oxygen vacancy number and positions and energy gaps. Ab initio band structure calculations explain the evolution of the electronic excitation spectrum as a function of oxygen vacancy number and positions and importantly provide a predictive description of the oxygen deficient Ta oxide that may improve the desired performance based on atomic level design.

  7. Transparent amorphous zinc oxide thin films for NLO applications

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Sahraoui, B.

    2014-11-01

    This review focuses on the growth and optical properties of amorphous zinc oxide (ZnO) thin films. A high quality ZnO films fabricated by dip-coating (sol-gel) method were grown on quartz and glass substrates at temperature equal to 350 K. The amorphous nature of the films was verified by X-ray diffraction. Atomic Force Microscopy was used to evaluate the surface morphology of the films. The optical characteristics of amorphous thin films have been investigated in the spectral range 190-1100 nm. Measurement of the polarized optical properties was shows a high transmissivity (80-99%) and low absorptivity (<5%) in the visible and near infrared regions at different angles of incidence. Linear optical properties were investigated by classic and Time-Resolved Photoluminescence (TRPL) measurements. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. An innovative TRPL technique has enabled the measurement of the photoluminescence decay time as a function of temperature. TRPL measurements reveal a multiexponential decay behavior typical for amorphous thin films. Second and third harmonic generation measurements were performed by means of the rotational Maker fringe technique using Nd:YAG laser at 1064 nm in picosecond regime for investigations of the nonlinear optical properties. The obtained values of second and third order nonlinear susceptibilities were found to be high enough for the potential applications in the optical switching devices based on refractive index changes. Presented spectra confirm high structural and optical quality of the investigated zinc oxide thin films.

  8. Low Temperature, High Energy Density Micro Thin Film Solid Oxide Fuel Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A new type of solid oxide fuel cell based on thin film technology and ultra-thin electrolyte is being proposed to develop to realize major reductions in fuel cell...

  9. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

    Science.gov (United States)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

    2016-11-17

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10(-5) mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  10. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

    Science.gov (United States)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

    2016-11-01

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10-5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  11. Isothermal thermogravimetric analysis of soybean oil oxidation correlated to thin film micro-oxidation test methods

    Science.gov (United States)

    A method of correlation between the Thin Film Micro-Oxidation (TFMO) test with isothermal thermogravimetric analysis is reported utilizing a soybean oil system. Utilizing a kinetic model, pseudo-rate constants and “activation energy” can be calculated from weight loss data. This model accounts for o...

  12. Tailor-made oxide architectures attained by molecularly permeable metal-oxide organic hybrid thin films.

    Science.gov (United States)

    Sarkar, Debabrata; Taffa, Dereje Hailu; Ishchuk, Sergey; Hazut, Ori; Cohen, Hagai; Toker, Gil; Asscher, Micha; Yerushalmi, Roie

    2014-08-21

    Tailor-made metal oxide (MO) thin films with controlled compositions, electronic structures, and architectures are obtained via molecular layer deposition (MLD) and solution treatment. Step-wise formation of permeable hybrid films by MLD followed by chemical modification in solution benefits from the versatility of gas phase reactivity on surfaces while maintaining flexibility which is more common at the liquid phase.

  13. Solution-Processed Indium Oxide Based Thin-Film Transistors

    Science.gov (United States)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  14. Wettability and photochromic behaviour of Molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Allogho, Guy-Germain, E-mail: guy-germain.allogho@umoncton.ca; Ashrit, P.V., E-mail: pandurang.ashrit@umoncton.ca

    2012-01-01

    The temporal wettability (hydrophobic-hydrophilic) behaviour of thermally evaporated Molybdenum oxide thin films is examined via water droplet contact angle and water droplet lifetime measurements. Super-hydrophilic state is quickly achieved in these films and the rapidity of this conversion depends strongly on the film preparation conditions. It is found that film microstructure, humidity content and UV irradiation have a profound influence on the wettability behaviour of these films. The ensuing photochromic effect under UV irradiation is also followed through the optical changes occurring in the film. Films deposited at higher chamber pressure have a generally smaller initial contact angle and lifetime.

  15. Thin buried oxide in oxygen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Spaggiari, C.; Bertoni, S.; Cerofolini, G.F.; Fumagalli, P.; Meda, L. (Istituto Guido Donegani, Novara (Italy))

    1993-01-01

    SiO[sub 2] precipitation in oxygen-supersaturated silicon was studied. Oxygen was inserted by ion implantation into single-crystal silicon. Evidence is given for a special phenomenon of oxygen blocking due to hot clouds resulting from collisional cascades. In the region where blocking is active, precipitates are formed in as-implanted conditions. A model is formulated and specialized to predict the dependence on depth of precipitate density and size. The existence of a buried region of precipitates is useful for producing a thin buried oxide. The Low-Dose SIMOX (LODOX) structure obtained provides a solution for many problems that are typical of silicon substrates for complementary metal-oxide silicon (CMOS) applications. (Author).

  16. Effect of oxidizing agents in CeO2 thin film formation.

    Science.gov (United States)

    Yadav, S. M.; Sartale, S. D.

    2012-06-01

    Cerium Oxide (CeO2) thin films have been prepared by oxidative soak method onto glass substrates using NaNO2 and NaBrO3 oxidizing agents. Because of different oxidation strength different crystallinity, morphology and optical properties of the CeO2 films have been observed. Furthermore it has been observed that crystalline, transparent and crack free CeO2 thin films can be obtained using NaNO2 oxidizing agent. On the other hand CeO2 thin films deposited by using NaBrO3 oxidizing agent are amorphous, less transparent and porous with large number of cracks.

  17. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  18. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  19. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  20. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Science.gov (United States)

    Kim, Chang-Jung; Kim, Sangwook; Lee, Je-Hun; Park, Jin-Seong; Kim, Sunil; Park, Jaechul; Lee, Eunha; Lee, Jaechul; Park, Youngsoo; Kim, Joo Han; Shin, Sung Tae; Chung, U.-In

    2009-12-01

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.

  1. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    Science.gov (United States)

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  2. Synthesis and Oxidation Resistance of h-BN Thin Films

    Science.gov (United States)

    Stewart, David; Meulenberg, Robert; Lad, Robert

    Hexagonal boron nitride (h-BN) is an exciting 2D material for use in sensors and other electronic devices that operate in harsh, high temperature environments. Not only is h-BN a wide band gap material with excellent wear resistance and high temperature stability, but recent reports indicate that h-BN can prevent metallic substrates from oxidizing above 600°C in low O2 pressures. However, the PVD of highly crystalline h-BN films required for this oxidation protection has proven challenging. In this work, we have explored the growth of h-BN thin films by reactive RF magnetron sputtering from an elemental B target in an Ar/N2 atmosphere. The film growth rate is extremely slow and the resulting films are atomically smooth and homogeneous. Using DC biasing during deposition and high temperature annealing treatments, the degree of film crystallinity can be controlled. The oxidation resistance of h-BN films deposited on inert sapphire and reactive metal substrates such as Zr and ZrB2 has been examined by techniques such as XPS, XRD, and SEM after oxidation between 600 and 1200°C under varying oxygen pressures. The success of h-BN as a passivation layer for metallic substrates in harsh environments is shown to depend greatly on its crystalline quality and defects. Supported by the NSF SusChEM program.

  3. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  4. Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films

    Science.gov (United States)

    Politano, Grazia Giuseppina; Versace, Carlo; Vena, Carlo; Castriota, Marco; Ciuchi, Federica; Fasanella, Angela; Desiderio, Giovanni; Cazzanelli, Enzo

    2016-11-01

    Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover, using electrophoretic deposition, we have found a higher value of optical density for GO thin films, not observed in GO films obtained with other deposition methods.

  5. Transparent Conductive Oxides for Thin-Film Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.

    2005-04-25

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150C and 350C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the

  6. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  7. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Energy Technology Data Exchange (ETDEWEB)

    Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  8. The structure of nickel and indium oxide thin films from EXAFS data

    Science.gov (United States)

    Bets, V.; Zamozdiks, T.; Lusis, A.; Purans, J.; Bausk, N.; Sheromov, M.

    1987-11-01

    The structure of nickel oxide and indium oxide doped by tin films prepared by reactive magnetron sputtering has been studied by the EXAFS method. It has been found that the nickel oxide thin film has a microcrystalline structure with significant disorder proved by the increase of the Debye-Waller factor and the sharp decrease of peak amplitudes. The indium oxide thin film has a noticeable structural disorder due to 8% tin dopping.

  9. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  10. Properties of mixed molybdenum oxide iridium oxide thin films synthesized by spray pyrolysis

    Science.gov (United States)

    Patil, P. S.; Kawar, R. K.; Sadale, S. B.; Inamdar, A. I.; Deshmukh, H. P.

    2006-09-01

    Molybdenum-doped iridium oxide thin films have been deposited onto corning glass- and fluorine-doped tin oxide coated corning glass substrates at 350 °C by using a pneumatic spray pyrolysis technique. An aqueous solution of 0.01 M ammonium molybdate was mixed with 0.01 M iridium trichloride solution in different volume proportions and the resultant solution was used as a precursor solution for spraying. The as-deposited samples were annealed at 600 °C in air medium for 1 h. The structural, electrical and optical properties of as-deposited and annealed Mo-doped iridium oxide were studied and values of room temperature electrical resistivity, and thermoelectric power were estimated. The as-deposited samples with 2% Mo doping exhibit more pronounced electrochromism than other samples, including pristine Ir oxide.

  11. Refractive indices of textured indium tin oxide and zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)]. E-mail: exwsun@ntu.edu.sg; Chen, B.J. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Xu, C.X. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Chen, T.P. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, C.Q. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Tay, B.K. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, Z. [Nanotech Center, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China)

    2006-07-03

    The refractive indices of textured indium tin oxide (ITO) and zinc oxide (ZnO) thin films were measured and compared. The ITO thin film grown on glass and ZnO buffered glass substrates by sputtering showed distinct differences; the refractive index of ITO on glass was about 0.05 higher than that of ITO on ZnO buffered glass in the whole visible spectrum. The ZnO thin film grown on glass and ITO buffered glass substrates by filtered vacuum arc also showed distinct differences; the refractive index of ZnO on glass was higher than that of ZnO on ITO buffered glass in the red and green region, but lower in the blue region. The largest refractive index difference of ZnO on glass and ITO buffered glass was about 0.1 in the visible spectrum. The refractive index variation was correlated with the crystal quality, surface morphology and conductivity of the thin films.

  12. Metal oxide semiconductor thin-film transistors for flexible electronics

    Science.gov (United States)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  13. Conductivity and thermoelectric properties of nanostructure tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M.A. Batal

    2014-04-01

    Full Text Available Tin oxide thin films doped with iron or copper were deposited on glass and porous alumina substrates, using the co-deposition dip coating sol–gel technique. Alumina substrate was prepared by the anodizing technique. Samples were sintered for 2 h at temperature 600 °C. The XRD spectrum of deposited samples shows a polycrystalline structure with a clear characteristic peak of SnO2 cassiterite phase. From (I–V characteristics measured at different temperatures for samples prepared on glass substrates, the density of states at the Fermi level was calculated. Thermoelectric effect was measured with a change of temperature for prepared samples under low pressure 1 mbar. Seebeck coefficient, the carrier concentration, the charge carrier mobility and the figure merit were determined for prepared samples under low pressure 1 mbar. Seebeck coefficient was improved when films were deposited on porous Alumina substrates.

  14. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  15. Nanostructuring thin Au films on transparent conductive oxide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, F., E-mail: francesco.ruffino@ct.infn.it [Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Center for Materials and Technologies for Information Communication and Solar Energy (MATIS CNR-IMM), via S. Sofia 64, 95123 Catania (Italy); Crupi, I. [Center for Materials and Technologies for Information Communication and Solar Energy (MATIS CNR-IMM), via S. Sofia 64, 95123 Catania (Italy); Carria, E. [Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Center for Materials and Technologies for Information Communication and Solar Energy (MATIS CNR-IMM), via S. Sofia 64, 95123 Catania (Italy); Kimiagar, S. [Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Islamic Azad University, Central Tehran Branch, Forsat Shirazi St. North Eskanari St. Azadi Rd. No 136, 13185/768 Tehran (Iran, Islamic Republic of); Simone, F.; Grimaldi, M.G. [Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Center for Materials and Technologies for Information Communication and Solar Energy (MATIS CNR-IMM), via S. Sofia 64, 95123 Catania (Italy)

    2013-05-15

    Highlights: ► Thermal-induced morphology evolution of Au nanoclusters on ITO is studied. ► Laser irradiation-induced morphology evolution of thin Au film on ITO is studied. ► Au nanorings formation on ITO is presented. ► Au nanoclusters formation on ITO is presented. -- Abstract: Fabrication processes of Au nanostructures on indium-tin-oxide (ITO) surface by simple, versatile, and low-cost bottom-up methodologies are investigated in this work. A first methodology exploits the patterning effects induced by nanosecond laser irradiations on thin Au films deposited on ITO surface. We show that after the laser irradiations, the Au film break-up into nanoclusters whose mean size and surface density are tunable by the laser fluence. A second methodology exploits, instead, the patterning effects of standard furnace thermal processes on the Au film deposited on the ITO. We observe, in this case, a peculiar shape evolution from pre-formed nanoclusters during the Au deposition stage on the ITO, to holed nanostructures (i.e. nanorings), during the furnace annealing processes. The nanorings depth, height, width, and surface density are shown to be tunable by annealing temperature and time.

  16. Effect of Oxidation Temperature on Characteristics of Thermally Oxidized ZnO Thin Films on Mica Substrates.

    Science.gov (United States)

    Moon, Jiyun; Kim, Younggyu; Kim, Byunggu; Leem, Jae-Young

    2015-11-01

    Muscovite mica is one of the promising alternatives to polymer substrates because of its good thermal resistivity, flexibility, and transparency. In this study, metallic Zn films with a thickness of 300 nm were deposited on mica substrates through thermal evaporation; the thin films were then oxidized by annealing at temperatures ranging from 350 to 550 degrees C. The structural and optical properties of thermally oxidized ZnO thin films were investigated. Diffraction peaks for ZnO (100) and (002) planes were observed only for the ZnO thin films oxidized at temperatures above 450 degrees C. These films consisted of relatively rough film-like structures, and the average transmittance of the films was greater than 70% in the visible region. The highest near-band-edge emission was observed for the ZnO thin films oxidized at 500 degrees C. Upon increasing the oxidation temperatures to 500 degrees C, the optical band gap was blue-shifted.

  17. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  18. MOSFET Carrier Surface Effective Mobility with Thin Gate-Oxide Thickness

    Institute of Scientific and Technical Information of China (English)

    ZHAOYang; PARKEStephen; CHUJiamei; BURKEFranklyn

    2005-01-01

    Mobility is a key parameter in MOSFET (Metal-oxide-semiconduetor field effect transistor) modeling. However, due to the influence of transverse electric field as a result of thin gate-oxide thickness in modern MOSFET, conventional carriers mobility of bulk device is no longer appropriate. In this paper the measurement of carrier surface effective mobility with thin gate-oxide of 40A thickness device is completed, and the modeling and characterization of this mobility is presented by employing BSIM model. Results show that our approach is effective to model surface mobility of thin gate-oxide device.

  19. Promotion of hexadecyltrimethyleamine bromide to the damage of Alexandrium sp. LC3 by cupric glutamate

    Institute of Scientific and Technical Information of China (English)

    LI Hao; MIAO Jin-lai; CUI Feng-xia; LI Guang-you

    2006-01-01

    The effect of hexadecyltrimethyleamine bromide (HDTMAB) on the removal of A lexandrium sp. LC3 under cupric glutamate stress was investigated. Toxic effect of cupric glutamate on A lexandrium sp. LC3 was significantly promoted in the presence of HDTMAB, especially at 3.0 cmc of HDTMAB. It was found that the sulfhydryl group content of the cell decreased, while the malonaldehyde content and membrane permeability increased when Alexandrium sp. LC3 was treated with HDTMAB and cupric glutamate complex, compared with cupric glutamate alone. The data suggest that HDTMAB might stimulate the damage of A lexandrium sp. LC3 by enhancing the membrane permeability.

  20. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-11-01

    Full Text Available A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD steps. A threshold voltage (Vt shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  1. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar [Institute Center for Microsystems – iMicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi (United Arab Emirates); Okyay, Ali K. [Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey); UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  2. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    Science.gov (United States)

    El-Atab, Nazek; Rizk, Ayman; Okyay, Ali K.; Nayfeh, Ammar

    2013-11-01

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  3. Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

    Science.gov (United States)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1975-01-01

    Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

  4. Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

    Science.gov (United States)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1975-01-01

    Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

  5. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  6. Laser-Scribed Photo-thermal Reduction of Graphene-Oxide for Thin Film Sensor Applications

    OpenAIRE

    Kazemzadeh, Rouzbeh

    2015-01-01

    In this thesis, a cost effective, simple and fast method of reduction of Graphene Oxide thin film is proposed. Graphene oxide is a non-conductive material intrinsically and one of the techniques to convert it to conductive material is using laser beam to remove oxygen groups from its surface, in other words, to reduce it. Laser parameters must be optimized for an effective and successful reduction. Thin film of non-conductive Graphene oxide is converted into conductive thin layer by fast lase...

  7. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  8. P-channel thin film transistors using reduced graphene oxide

    Science.gov (United States)

    Chakraborty, S.; Resmi, A. N.; Renuka Devi, P.; Jinesh, K. B.

    2017-04-01

    Chemically reduced graphene oxide (rGO) samples with various degrees of reduction were prepared using hydrazine hydrate as the reducing agent. Scanning tunnelling microscope imaging shows that rGO contains rows of randomly distributed patches of epoxy groups. The local density of states of the rGO samples were mapped with scanning tunnelling spectroscopy, which shows that the bandgap in rGO originates from the epoxide regions itself. The Fermi level of the epoxide regions is shifted towards the valence band, making rGO locally p-type and a range of bandgaps from 0–2.2 eV was observed in these regions. Thin film transistors were fabricated using rGO as the channel layer. The devices show excellent output characteristics with clear saturation and gate dependence. The transfer characteristics show that rGO behaves as a p-type semiconductor; the devices exhibit an on/off ratio of 104, with a low-bias hole mobility of 3.9 cm2 V‑1 s‑1.

  9. Hydrolysis of cupric chloride in aqueous ammoniacal ammonium chloride solutions

    Directory of Open Access Journals (Sweden)

    Limpo, J. L.

    1995-06-01

    Full Text Available Cupric solubility in the CuCl2-NH4Cl-NH3-H2O system for chloride concentrations lower than 4 molal in the temperature range 25-60 °C was studied. The experimental results show that for chloride concentration between 3.0 and 1.0 molal the cupric solubility is determined by the solubility of the cupric hydroxychloride Cu(OH1.5Cl0.5. For a chloride concentration value of 4.0 molal, there are two cupric compounds, the hydroxychloride Cu(OH1.5Cl0.5 or the diammine chloride Cu(NH32Cl2, on which the solubility of Cu(II depends, according to the temperature and the value of the ratio [NH3]Total/[Cu]Total.

    Se estudia la solubilidad del Cu(II en el sistema CuCl2-NH4Cl-NH3-H2O para concentraciones de cloruro inferiores a 4 molal en el intervalo de temperaturas 25-60 °C. Los resultados experimentales muestran que, para concentraciones de cloruros comprendidas entre 3,0 y 1,0 molal, la solubilidad cúprica viene determinada por la solubilidad del hidroxicloruro cúprico, Cu(OH1.5Cl0.5. Para concentraciones de cloruro 4,0 molal, existen dos compuestos cúpricos, el hidroxicloruro, Cu(OH1.5Cl0.5 o el cloruro de diamina, Cu(NH32Cl2, de los que, de acuerdo con la temperatura y con el valor de la relación [NH3]Total/[Cu]Total depende la solubilidad del Cu(II.

  10. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  11. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  12. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  13. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  14. CATALYTIC HYDROGENATION AND OXIDATION OF BIOMASS-DERIVED LEVULINIC ACID

    Directory of Open Access Journals (Sweden)

    Yan Gong

    2011-02-01

    Full Text Available Levulinic acid (LA, 4-oxo-pentanoic acid, is a new platform chemical with various potential uses. In this paper, catalytic hydrogenation and oxidation of levulinic acid were studied. It was shown from experiments that levulinic acid can be hydrogenated to γ-valerolactone (GVL over transition metal catalysts and oxidative-decarboxylated to 2-butanone (methyl-ethyl-ketone, MEK and methyl-vinyl-ketone (MVK by cupric oxide (CuO, cupric oxide/cerium oxide (CuO/CeO2, cupric oxide/ alumina (CuO/ Al2O3, and silver(I/ peroxydisulfate (Ag(I/S2O82-.

  15. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Galloway, Heather Claire [Univ. of California, Berkeley, CA (United States)

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  16. Transition metal oxide thin films for nonvolatile resistive random access memory applications

    National Research Council Canada - National Science Library

    BAO, Dinghua

    2009-01-01

    .... This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite...

  17. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    Science.gov (United States)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  18. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    Science.gov (United States)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  19. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Karteri, İbrahim, E-mail: ibrahimkarteri@gmail.com [Department of Materials Science And Engineering, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Karataş, Şükrü [Department of Physics, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Yakuphanoğlu, Fahrettin [Department of Physics, Fırat University, Elazıg 2310 (Turkey)

    2014-11-01

    Highlights: • We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor. • Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. • We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. - Abstract: We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I{sub on}/I{sub off} of GO-TFT were found to be 0.105 cm{sup 2} V{sup −1} s{sup −1}, −8.7 V, 4.03 V/decade and 10, respectively.

  20. Leaching of complex sulphide concentrate in acidic cupric chloride solutions

    Institute of Scientific and Technical Information of China (English)

    M. TCHOUMOU; M. ROYNETTE

    2007-01-01

    The chemical analysis of a complex sulphide concentrate by emission spectrometry and X-ray diffraction shows that it contains essentially copper, lead, zinc and iron in the form of chalcopyrite, sphalerite and galena. A small amount of pyrite is also present in the ore but does not be detected with X-ray diffraction. The cupric chloride leaching of the sulphide concentrate at various durations and solid/liquid ratios at 100 ℃ shows that the rate of dissolution of the ore is the fastest in the first several hours, and after 12 h it does not evolve significantly. If oxygen is excluded from the aqueous cupric chloride solution during the leaching experiment at 100 ℃, the pyrite in the ore will not be leached. The determination of principal dissolved metals in the leaching liquor by flame atomic absorption spectrometry, and the chemical analysis of solid residues by emission spectrometry and X-ray diffraction allow to conclude that the rate of dissolution of the minerals contained in the complex sulphide concentrate are in the order of galena>sphalerite>chalcopyrite.

  1. Kinetics of coal desulfurization using cupric chloride solution

    Energy Technology Data Exchange (ETDEWEB)

    Ghazali, S.; Muharam, C.; Sani, S.A. [Bandung Inst. of Tech. (Indonesia)

    1995-12-31

    Coal desulfurization prior to combustion can be carried out either by physical or chemical methods. The physical methods, where the elimination of sulfur compounds is based on the difference of physical properties between pyritic sulfur and organic matrix, have progressed significantly and are currently used in commercial practice. These methods are, however, ineffective to remove organic sulfurs where S is attached chemically to carbon in the coal matrix. These compounds, presumed to be mercaptan, thyophene, organic sulfides or organic disulfide, could only be removed by chemical treatments. This paper describes the experimental study of coal beneficiation by chemical methods using cupric chloride solution. The results obtained showed that both organic and pyritic sulfurs were reduced significantly. It was also observed that cupric ions have reacted with in fraction of coal which was assumed to be some oxygenated carbon. The kinetics study has shown that the reaction rate of pyrite pseudo homogenous model and the reaction rates of organic sulfur generated coal fractions follow the power law models. (author). 5 tabs., 4 figs., 10 refs.

  2. Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

    Science.gov (United States)

    Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

    2005-09-01

    In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

  3. An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Li, Jiapeng; Lu, Lei; Feng, Zhuoqun; Kwok, Hoi Sing; Wong, Man

    2017-04-01

    The dependence of device reliability against a variety of stress conditions on the annealing atmosphere was studied using a single metal-oxide thin-film transistor with thermally induced source/drain regions. A cyclical switch between an oxidizing and a non-oxidizing atmosphere induced a regular change in the stress-induced shift of the turn-on voltage, with the magnitude of the shift being consistently smaller after annealing in an oxidizing atmosphere. The observed behavior is discussed in terms of the dependence of the population of oxygen vacancies on the annealing atmosphere, and it is recommended the last of the sequence of thermal processes applied to a metal-oxide thin-film transistor be executed in an oxidizing atmosphere.

  4. Conductive lithium nickel oxide thin film patterns via inkjet printing technology

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Chun-Chih, E-mail: r00524055@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Su, Pei-Chen, E-mail: peichensu@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liao, Ying-Chih, E-mail: liaoy@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China)

    2013-10-01

    In this research, a simple direct-writing method by inkjet printing to create conductive lithium nickel oxide thin film patterns at micrometer-scale is presented. Nickel/lithium hydroxides dissolved in acetic acid were inkjet-printed on quartz plates to create micro patterns, including lines and meshes, and converted into oxides by thermal pyrolysis. The synthesized thin films were composed of nanoparticles with 60 nm diameter after the sintering process. Thermogravimetric analysis results showed that the precursor inks decomposed into oxides at temperatures higher than 420 °C. The X-ray diffractograms showed that Ni{sub 2}O{sub 3} was synthesized with lithium oxides after sintered at 500 °C for an hour. The existence of Ni{sub 2}O{sub 3} in the prepared thin films leads to better electrical conductivity, which follows the Arrhenius relation with activation energy of 0.38 eV. - Highlights: • Conductive lithium nickel oxide patterns are fabricated via inkjet printing method. • The precursor inks decompose into oxides at temperatures higher than 420 °C. • Surface morphology and crystal structures of the sintered thin films are examined. • Electrical resistivity of the oxide thin films obeys the Arrhenius relation. • An activation energy of 0.38 eV is found in the Arrhenius relation.

  5. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  6. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides.

    Science.gov (United States)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeisser, Dieter; Van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; De Gendt, Stefan

    2015-06-28

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.

  7. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  8. Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions

    Institute of Scientific and Technical Information of China (English)

    HU Bin; HUANG Ke-ke; HOU Chang-min; YUAN Hong-ming; PANG Guang-sheng; FENG Shou-hua

    2012-01-01

    Thin films of perovskite manganese oxide La0.66Ca0.29K0.05MnO3(LCKMO) on Au/ITO(ITO=indium tin oxide) substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffraction(XRD),high-resolution transmission electron microscopy(HRTEM),and conductive atomic force microscopy (C-AFM) at room temperature.The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm,the same as that of the raw material used,but the structures are highly modulated.C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals.The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.

  9. Ultra-thin oxide films for band engineering: design principles and numerical experiments

    Energy Technology Data Exchange (ETDEWEB)

    Butler, Keith T.; Walsh, Aron, E-mail: a.walsh@bath.ac.uk

    2014-05-30

    The alignment of band energies between conductive oxides and semiconductors is crucial for the further development of oxide contacting layers in electronic devices. The growth of ultra thin films on the surface of an oxide material can be used to introduce a dipole moment at that surface due to charge differences. The dipole, in turn, alters the electrostatic potential — and hence the band energies — in the substrate oxide. We demonstrate the fundamental limits for the application of thin-films in this context, applying analytical and numerical simulations, that bridge continuum and atomistic. The simulations highlight the different parameters that can affect the band energy shifting potential of a given thin-film layer, taking the examples of MgO and SnO{sub 2}. In particular we assess the effect of formal charge, layer orientation, layer thickness and surface coverage, with respect to their effect on the electrostatic potential. The results establish some design principles, important for further development and application of thin-films for band energy engineering in transparent conductive oxide materials. - Highlights: • Bridging continuum electrostatics and numerical point charge simulations. • Principles for engineering of band energies through application of ultra-thin films. • Effects of thin-film orientation on band energy levels • Effects of film-coverage and thickness on band energy levels.

  10. Facile Synthesis of Porous-Structured Nickel Oxide Thin Film by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Siamak Pilban Jahromi

    2012-01-01

    Full Text Available Porous-structured nickel oxide (PsNiO was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD method on a nickel foil as a substrate. The results show uniform PsNiO after the oxidization of the nickel thin film at 750∘C for 1 h. X-ray diffraction (XRD indicates formation of the NiO crystalline structure. Field emission scanning electron microscopy (FESEM reveals different morphology on the surface of the nickel foil (sample A and on the nickel thin film (sample B. Comparison of the FESEM results after oxidization shows that the PsNiO on the nickel thin film was more regular and controllable than the NiO layer on the nickel foil. The FESEM images also show that the thickness of the nickel thin film affected the PsNiO size obtained after oxidization. This resulted from the growth of the porous structure at grain boundaries and from the grain sizes. The electrochemical properties of the PsNiO as an electrode are investigated by cyclic voltammetry (CV. These results show the effect of PsNiO size on the current of anodic peak.

  11. Ultra-thin Oxide Membranes: Synthesis and Carrier Transport

    Science.gov (United States)

    Sim, Jai Sung

    electrical resistivity of the nanowall showed semiconducting behavior with an activation energy different from that of TiO2 single crystals and was attributed to formation of TinO2n-1 phases after FIB processing. The CeO2 study involved high temperature conductivity studies on substrate-free self-supported nano-crystalline ceria membranes up to 800 K. Increasing conductivity with oxygen partial pressure directly opposing the behavior of thin film devices 'clamped' by substrate has been observed. This illustrate that the relaxed nature of free standing membranes, and increased surface to volume ratio enables more sensitive electrical response to oxygen adsorption which could have implications for their use in oxygen storage devices, solid oxide fuel cells, and chemical sensors. The work in this thesis advances the understanding of materials in freestanding membrane form and advances fabrication techniques that have not been explored before, having implications for sensors, actuators, SOFC, memristors, and physics of quasi-2D materials.

  12. Room temperature transparent conducting oxides based on zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Clatot, J. [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France); Campet, G. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Zeinert, A. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue St. Leu, 80039, Amiens (France); Labrugere, C. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Rougier, A., E-mail: aline.rougier@u-picardie.fr [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France)

    2011-04-01

    Doped zinc oxide thin films are grown on glass substrate at room temperature under oxygen atmosphere, using pulsed laser deposition (PLD). O{sub 2} pressure below 1 Pa leads to conductive films. A careful characterization of the film stoichiometry and microstructure using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) concludes on a decrease in crystallinity with Al and Ga additions ({<=}3%). The progressive loss of the (0 0 2) orientation is associated with a variation of the c parameter value as a function of the film thickness and substrate nature. ZnO:Al and ZnO:Ga thin films show a high optical transmittance (>80%) with an increase in band gap from 3.27 eV (pure ZnO) to 3.88 eV and 3.61 eV for Al and Ga doping, respectively. Optical carrier concentration, optical mobility and optical resistivity are deduced from simulation of the optical data.

  13. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  14. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    Science.gov (United States)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  15. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  16. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  17. Cupric Hexacyanoferrate Nanoparticle Modified Carbon Ceramic Composite Electrodes

    Institute of Scientific and Technical Information of China (English)

    WANG,Peng(王鹏); ZHU,Guo-Yi(朱果逸)

    2002-01-01

    Graphite powder-supported cupric hexacyanoferrate (CuHCF)nanoparticles were dispersed into methyltrimethoxysilane-based gels to produce a conducting carbon ceramic composite, which was used as electrode material to fabricate surface-renewable CuHCF-modified electrodes. Electrochemical behavior of the CuHCF-modified carbon ceramic composite electrodes was characterized using cyclic and square-wave voitammetry.Cyclic voltammograms at various scan rates indicated that peak currents were surface-confined at low scan rates. In the presence of glutathione, a clear electrocatalytic response was observed at the CuHCF-modified composite electrodes. In addition, the electrodes exhibited a distinct advantage of reproducible surface-renewal by simple mechanical polishing on emery paper, as well as ease of preparation, and good chemical and mechanical stability in a flowing stream.

  18. Cupric Hexacyanoferrate Nanoparticle Modified Carbon Ceramic Composite Electrodes

    Institute of Scientific and Technical Information of China (English)

    WANG,Peng; ZHU,Guo-Yi

    2002-01-01

    Graphite powder-supported cupric hexacyanoferrate(CuHCF) nanoparticles were dispersed into methyltrimethoxysilane-based gels to produce a conducting carbon ceramic composite,which was used as electrode materials to fabricate surface-renewable CuHCF-modified electrodes.Electrochemical behavior of the CuHCF-modified carbon ceramic composite electrodes was characterized using cyclic and square-wave voltammetry. Cyclinc voltammograms at various scan rates indicated that peak currents were suface-confined at low scan rates.In the presence of glutathione,a clear electrocatalytic response was observed at the CuHCF-modified composite electrodes.In addition,the electrodes exhibited a distinct advantage of reproducible surface-renewal by simple mechanical polishing on emery paper,as well as ease of preparation,and good chemical and mechanical stability in a flowing stream.

  19. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    OpenAIRE

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resist...

  20. Improving electrical properties of sol-gel derived zinc oxide thin films by plasma treatment

    Science.gov (United States)

    Talukder, Al-Ahsan; Pokharel, Jyotshna; Shrestha, Maheshwar; Fan, Qi H.

    2016-10-01

    Being a direct and wide bandgap semiconductor, zinc oxide is a suitable material for various optoelectronic applications. These applications require tuning and controlling over the electrical and optical properties of zinc oxide films. In this work, zinc oxide thin films were prepared by a solution method that led to oriented crystal growth along (002) plane. The zinc oxide thin films were treated with oxygen, hydrogen, and nitrogen plasmas. The films were characterized to reveal the effects of plasma treatments on transmittance, crystallinity, carrier density, carrier mobility, and electrical resistivity. Oxygen plasma treatment improved the crystallinity of the zinc oxide thin film without affecting the film's transmittance. Hydrogen plasma treatments were found very effective in improving the electrical conductivity sacrificing the film's transmittance. Nitrogen plasma treatment led to improved electrical conductivity without compromising the crystallinity and optical transmittance. Sequential oxygen, hydrogen, and nitrogen plasma treatments significantly reduced the resistivity of zinc oxide thin films by over two orders and maintained the transmittance close to the as-deposited films of ˜80% in visible wavelength range. This is the first work on the improvement of conductivity of solution-based zinc oxide films using the plasma treatment.

  1. Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.

    Science.gov (United States)

    Kim, Jung Hyun; Rim, You Seung; Kim, Hyun Jae

    2014-04-09

    A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlOx layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlOx/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm(2)/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10(6) with a width/length (W/L) of 2000 μm/400 μm.

  2. Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique.

    Science.gov (United States)

    Lee, Sangik; Hwang, Inrok; Oh, Sungtaek; Hong, Sahwan; Kim, Yeonsoo; Nam, Yoonseung; Lee, Keundong; Yoon, Chansoo; Kim, Wondong; Park, Bae Ho

    2014-11-03

    High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin oxide layers. Here, we report that ultra-thin oxide layers with reliable RS behavior can be self-assembled by field-induced oxygen migration (FIOM) at the interface of an oxide-conductor/oxide-insulator or oxide-conductor/metal. The formation via FIOM of an ultra-thin oxide layer with a thickness of approximately 2-5 nm and 2.5% excess oxygen content is demonstrated using cross-sectional transmission electron microscopy and secondary ion mass spectroscopy depth profile. The observed RS behavior, such as the polarity dependent forming process, can be attributed to the formation of an ultra-thin oxide layer. In general, as oxygen ions are mobile in many oxide-conductors, FIOM can be used for the formation of ultra-thin oxide layers with desired properties at the interfaces or surfaces of oxide-conductors in high-performance oxide-based devices.

  3. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  4. Thermochemical hydrogen generation of indium oxide thin films

    Science.gov (United States)

    Lim, Taekyung; Ju, Sanghyun

    2017-03-01

    Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD) and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  5. Production of amorphous tin oxide thin films and microstructural transformation induced by heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.W.; Lai, J.K.L.; Shek, C.H.; Chen, H.D. [City University of Hong Kong, Department of Physics and Materials Science, Kowloon Tong, Hong Kong (China)

    2005-10-01

    X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and high resolution transmission electron microscopy were used to study tin oxide thin films deposited on Si(100) substrates at room temperature using pulsed laser deposition techniques with a sintered cassiterite SnO{sub 2} target and subsequently heat-treated. X-ray diffraction and scanning electron microscopy results demonstrated that the as-prepared thin films consisted of an amorphous matrix as well as plume-like features, which are shown many micropores. The thin films that were heat treated for 2 h at 150 C had tetragonal rutile nanocrystalline SnO{sub 2} structures. The microstructural evolution of the tin oxide thin films during the heat treatment is discussed in the paper. (orig.)

  6. Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique

    Indian Academy of Sciences (India)

    A A ATTA; M M EL-NAHASS; KHALED M ELSABAWY; M M ABD EL-RAHEEM; A M HASSANIEN; A ALHUTHALI; ALI BADAWI; AMAR MERAZGA

    2016-11-01

    Transparent metal oxide thin films of samarium oxide (Sm$_2$O$_3$) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (E$^{d}_{g}$ ) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm$_2$O$_3$ thin films were found to obey the single oscillator model.

  7. Electrochromic and chemochromic performance of mesoporous thin-film vanadium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ping; Lee, Se-Hee; Tracy, C. Edwin; Turner, John A.; Pitts, J. Roland; Deb, Satyen K. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 (United States)

    2003-12-01

    Mesoporous vanadium oxide thin films have been deposited electrochemically from a water/ethanol solution of vanadyl sulfate and a nonionic polymer surfactant. Aggregates of the polymer surfactant serve as templates that result in the formation of a mesoporous structure. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) indicate the presence of both macroporosity and mesoporosity in the electrodeposited film. Chemochromic behavior of mesoporous vanadium oxide is demonstrated in a palladium/vanadium oxide thin-film device, which colors when exposed to hydrogen gas. A comparison of results with evaporated vanadium oxide reveals that the mesoporous film displays an improved kinetic performance, which is most likely attributable to its highly porous structure. Also, the electrochemical properties have been explored in a lithium-battery configuration. Mesoporous vanadium oxide exhibits a very high lithium storage capacity and greatly enhanced charge-discharge rate. In situ optical measurements show that the film exhibits a multicolor electrochromic effect.

  8. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States); McGlone, J.M.; Landau, N.P.; Wager, J.F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 (United States); Stickle, W.F. [Hewlett-Packard Company, Corvallis, OR 97333 (United States); Herman, G.S., E-mail: greg.herman@oregonstate.edu [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States)

    2015-11-30

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni (< 30 min), and then by outward diffusion of Zr (> 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  9. Preparation of Thin Melanin-Type Films by Surface-Controlled Oxidation.

    Science.gov (United States)

    Salomäki, Mikko; Tupala, Matti; Parviainen, Timo; Leiro, Jarkko; Karonen, Maarit; Lukkari, Jukka

    2016-04-26

    The preparation of thin melanin films suitable for applications is challenging. In this work, we present a new alternative approach to thin melanin-type films using oxidative multilayers prepared by the sequential layer-by-layer deposition of cerium(IV) and inorganic polyphosphate. The interfacial reaction between cerium(IV) in the multilayer and 5,6-dihydroxyindole (DHI) in the adjacent aqueous solution leads to the formation of a thin uniform film. The oxidation of DHI by cerium(IV) proceeds via known melanin intermediates. We have characterized the formed DHI-melanin films using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-vis spectroscopy, and spectroelectrochemistry. When a five-bilayer oxidative multilayer is used, the film is uniform with a thickness of ca. 10 nm. Its chemical composition, as determined using XPS, is typical for melanin. It is also redox active, and its oxidation occurs in two steps, which can be assigned to semiquinone and quinone formation within the indole structural motif. Oxidative multilayers can also oxidize dopamine, but the reaction stops at the dopamine quinone stage because of the limited amount of the multilayer-based oxidizing agent. However, dopamine oxidation by Ce(IV) was studied also in solution by UV-vis spectroscopy and mass spectrometry in order to verify the reaction mechanism and the final product. In solution, the oxidation of dopamine by cerium shows that the indole ring formation takes place already at low pH and that the mass spectrum of the final product is practically identical with that of commercial melanin. Therefore, layer-by-layer formed oxidative multilayers can be used to deposit functional melanin-type thin films on arbitrary substrates by a surface-controlled reaction.

  10. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  11. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.|info:eu-repo/dai/nl/304830585; Liu, Y.|info:eu-repo/dai/nl/304831743; de Jong, M.M.|info:eu-repo/dai/nl/325844208; de Wild, J.|info:eu-repo/dai/nl/314641378; Schuttauf, J.A.|info:eu-repo/dai/nl/314118039; Brinza, M.|info:eu-repo/dai/nl/304823325; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of nanocry

  12. Thermoluminescent response of aluminium oxide thin films subject to gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arrieta, A.; Escobar A, L.; Camps, E.; Villagran, E.; Gonzalez, P.R

    2006-07-01

    The thermoluminescent (TL) properties of amorphous aluminium oxide thin films (thicknesses as low as 0.3 {mu}m) subjected to gamma (Co-60) irradiation are reported. Aluminium oxide thin films were prepared by laser ablation from an Al{sub 2}O{sub 3} target using a Nd: YAG laser with emission at the fundamental line. The films were exposed to gamma radiation (Co-60) in order to study their TL response. Thermoluminescence glow curves exhibited two peaks at 110 and 176 C. The high temperature peak shows good stability and 30% fading in the first 5 days after irradiation. A linear relationship between absorbed dose and the thermoluminescent response for doses span from 150 mGy to 100 Gy was observed. These results suggest that aluminium oxide thin films are suitable for detection and monitoring of gamma radiation. (Author)

  13. Roll-to-Roll Transfer Printing of Reduced Graphene Oxide Thin Film

    OpenAIRE

    Jang, Hyun-Woo

    2015-01-01

    A novel thin film transfer mechanism has been studied and developed to transfer chemically reduced graphene oxide (r-GO) thin film using a roll-to-roll printing system. We discover that shear stress generated on the silicon rubber stamp surface facilitates delamination of the deposited r-GO thin film efficiently.A roll-to-roll apparatus is assembled to demonstrate the shear-induced transfer printing in a large scale printing system. Shear stress is applied on the stamp surface by rotating the...

  14. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  15. Multi-Walled Carbon Nanotube-Doped Tungsten Oxide Thin Films for Hydrogen Gas Sensing

    OpenAIRE

    2010-01-01

    In this work we have fabricated hydrogen gas sensors based on undoped and 1 wt% multi-walled carbon nanotube (MWCNT)-doped tungsten oxide (WO3) thin films by means of the powder mixing and electron beam (E-beam) evaporation technique. Hydrogen sensing properties of the thin films have been investigated at different operating temperatures and gas concentrations ranging from 100 ppm to 50,000 ppm. The results indicate that the MWCNT-doped WO3 thin film exhibits high sensitivity and selectivity ...

  16. Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time

    Science.gov (United States)

    Sultana, Jenifar; Paul, Somdatta; Karmakar, Anupam; Yi, Ren; Dalapati, Goutam Kumar; Chattopadhyay, Sanatan

    2017-10-01

    Thin film of p-type cupric oxide (p-CuO) is grown on silicon (n-Si) substrate by using chemical bath deposition (CBD) technique and a precise control of thickness from 60 nm to 178 nm has been achieved. The structural properties and stoichiometric composition of the grown films are observed to depend significantly on the growth time. The chemical composition, optical properties, and structural quality are investigated in detail by employing XRD, ellipsometric measurements and SEM images. Also, the elemental composition and the oxidation states of Cu and O in the grown samples have been studied in detail by XPS measurements. Thin film of 110 nm thicknesses exhibited the best performance in terms of crystal quality, refractive index, dielectric constant, band-gap, and optical properties. The study suggests synthesis route for developing high quality CuO thin film using CBD method for electronic and optical applications.

  17. Electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices

    Science.gov (United States)

    He, Zhen

    The focus of this dissertation is the electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices. The electrochemical reduction of metal oxides to metals has been studied for decades as an alternative to pyrometallurgical processes for the metallurgy industry. However, the previous work was conducted on bulk polycrystalline metal oxides. Paper I in this dissertation shows that epitaxial face-centered cubic magnetite (Fe3O4 ) thin films can be electrochemically reduced to epitaxial body-centered cubic iron (Fe) thin films in aqueous solution on single-crystalline Au substrates at room temperature. This technique opens new possibilities to produce special epitaxial metal/metal oxide heterojunctions and a wide range of epitaxial metallic alloy films from the corresponding mixed metal oxides. Electrodeposition, like biomineralization, is a soft solution processing method which can produce functional materials with special properties onto conducting or semiconducting solid surfaces. Paper II in this dissertation presents the electrodeposition of cobalt-substituted magnetite (CoxFe3-xO4, 0 of cobalt-substituted magnetite (CoxFe3-xO4, 0thin films and superlattices on Au single-crystalline substrates, which can be potentially used in spintronics and memory devices. Paper III in this dissertation reports the electrodeposition of crystalline cobalt oxide (Co3O4) thin films on stainless steel and Au single-crystalline substrates. The crystalline Co3O4 thin films exhibit high catalytic activity towards the oxygen evolution reaction in an alkaline solution. A possible application of the electrodeposited Co 3O4 is the fabrication of highly active and low-cost photoanodes for photoelectrochemical water-splitting cells.

  18. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  19. Ferroelectric-Like Properties of Amorphous Metal Oxide Thin Films Prepared by Sol-Gel Technique.

    Science.gov (United States)

    Xu, Yuhuan

    1995-01-01

    Advances in the field of both optical and electrical integrated circuit devices require new thin film materials. Ferroelectric materials have attractive properties such as hysteresis behavior, pyroelectricity, piezoelectricity and nonlinear optical properties. Many ferroelectric thin films have been successfully prepared from metal organic compounds via sol-gel processing. Thus far, research has concentrated upon polycrystalline or epitaxial ferroelectric films. For amorphous ferroelectric thin films, preliminary experimental results in our laboratory indicated that these amorphous films possessed good ferroelectric -like properties. The purpose of this research is (1) to fabricate amorphous metal oxide thin films by the sol-gel technique, (2) to determine whether these amorphous metal oxide thin films have ferroelectric-like properties and (3) to propose a theoretical model ("ferrons model") to explain the ferroelectric-like properties of amorphous thin films, which deals with a structure of permanent dipoles of "partially ordered clusters" (ferrons) in the amorphous films. The theoretical model is based on our experimental results of thin films of two amorphous materials (barium titanite and lead zirconate titanate). This research may provide a new functional material which could be useful for producing integrated electronic and electrooptic devices.

  20. Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.C., E-mail: ielinyc@cc.ncue.edu.tw; Wang, B.L.; Yen, W.T.; Shen, C.H.

    2011-06-01

    In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 x 10{sup -4} {Omega} cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 x 10{sup -3} {Omega} cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

  1. Component effects on the vanadium oxide thin films phase transition character phenomenon observed

    Science.gov (United States)

    Tian, X. S.; Liu, J. C.; Wang, Q.

    2008-10-01

    We present what is, to the best of our knowledge, how the components affect the phase transition character of the vanadium oxide thin films. The vanadium oxide thin films are prepared on zinc selenide by a DC magnet sputtering method for the first time; the components are achieved by the x-ray photoelectron spectroscopy (XPS). The films are annealed to tune their components. A spectral transmittance study has been made from 2.5 to 25.0 μm. We can see that, except for doping, different components can change the phase transition characters of the films. The components can affect the phase transition temperature, hysteresis cycle, and the transmittance.

  2. Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

    Science.gov (United States)

    Shvets, Petr; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

    2017-05-01

    The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

  3. Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

    Energy Technology Data Exchange (ETDEWEB)

    Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

    2017-05-15

    The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

  4. Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

    Energy Technology Data Exchange (ETDEWEB)

    Riech, I.; Acosta, M.; Pena, J. L.; Bartolo-Perez, P. [Laboratorio de Ciencia de Materiales, Facultad de Ingenieria, Universidad Autonoma de Yucatan, A. P 150. Cordemex, Merida, Yucatan 97130 (Mexico); Departamento de Fisica Aplicada, CINVESTAV-IPN Unidad Merida, A.P. 73 Cordemex, Merida, Yucatan 97130 (Mexico)

    2010-03-15

    Tungsten-oxide films were deposited on glass substrates from a metal-oxide target by nonreactive radio-frequency sputtering. The authors have studied the effect that changing Ar gas pressure has on the electrical, optical, and chemical composition in the thin films. Resistivity of WO{sub 3} changed ten orders of magnitude with working gas pressure values from 20 to 80 mTorr. Thin films deposited at 20 mTorr of Ar sputtering pressure showed lower resistivity and optical transmittance. X-ray photoelectron spectroscopy (XPS) measurements revealed similar chemical composition for all samples irrespective of Ar pressure used. However, XPS analyses of the evolution of W 4f and O 1s peaks indicated a mixture of oxides dependent on the Ar pressure used during deposition.

  5. Thin film tin oxide-based propane gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Carbajal-Franco, G.; Tiburcio-Silver, A. [Inst. Tecnologico de Toluca, Metepec (Mexico); Dominguez, J.M. [Instituto Mexicano del Petroleo, Apdo. postal 14-805, 07730, D. F., Mexico (Mexico); Sanchez-Juarez, A. [CIE-UNAM, Apdo. postal 34, 62580, Temixco (Mexico)

    2000-09-03

    In this work, we report on the elaboration of SnO{sub 2} and SnO{sub 2}:Ag thin films ({proportional_to}200 nm in thickness) obtained by heat-treatment in oxygen of Sn and Sn:Ag thin films deposited by vacuum evaporation on alumina substrates. A simple and very cheap procedure was used to dope the SnO{sub 2} films with Ag. Preliminary results on the sensing properties of these films are presented. Films are able to detect selectively the presence of C{sub 3}H{sub 8} in the LP-gas domestic mixture. Doping with Ag allows reductions in the optimal operation temperature of the SnO{sub 2} sensors by 100 C. This a very important result when detecting such a highly explosive gas. (orig.)

  6. Indium oxide thin film based ammonia gas and ethanol vapour sensor

    Indian Academy of Sciences (India)

    K K Makhija; Arabinda Ray; R M Patel; U B Trivedi; H N Kapse

    2005-02-01

    A sensor for ammonia gas and ethanol vapour has been fabricated using indium oxide thin film as sensing layer and indium tin oxide thin film encapsulated in poly(methyl methacrylate) (PMMA) as a miniature heater. For the fabrication of miniature heater indium tin oxide thin film was grown on special high temperature corning glass substrate by flash evaporation method. Gold was deposited on the film using thermal evaporation technique under high vacuum. The film was then annealed at 700 K for an hour. The thermocouple attached on sensing surface measures the appropriate operating temperature. The thin film gas sensor for ammonia was operated at different concentrations in the temperature range 323–493 K. At 473 K the sensitivity of the sensor was found to be saturate. The detrimental effect of humidity on ammonia sensing is removed by intermittent periodic heating of the sensor at the two temperatures 323K and 448 K, respectively. The indium oxide ethanol vapour sensor operated at fixed concentration of 400 ppm in the temperature range 293–393 K. Above 373 K, the sensor conductance was found to be saturate. With various thicknesses from 150–300 nm of indium oxide sensor there was no variation in the sensitivity measurements of ethanol vapour. The block diagram of circuits for detecting the ammonia gas and ethanol vapour has been included in this paper.

  7. Fluorine compounds for doping conductive oxide thin films

    Science.gov (United States)

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  8. Doped thin metal oxide films for catalytic gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Gyoergy, E. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania)]. E-mail: eniko@ifin.nipne.ro; Axente, E. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Mihailescu, I.N. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Ducu, C. [University of Pitesti, Targul din Vale 1, 110040 Pitesti (Romania); Du, H. [Advanced Materials Research Institute, University of Newcastle (United Kingdom)

    2006-04-30

    TiO{sub 2} and Pt doped TiO{sub 2} thin films were grown by pulsed laser deposition on <0 0 1> SiO{sub 2} substrates. The doped films were compared with undoped ones deposited in similar experimental conditions. An UV KrF* ({lambda} = 248 nm, {tau} {sub FWHM} {approx_equal} 20 ns, {nu} = 2 Hz) excimer laser was used for the irradiation of the TiO{sub 2} or Pt doped TiO{sub 2} targets. The substrate temperatures were fixed during the growth of the thin films at values within the 300-500 deg. Crange. The films' surface morphology was investigated by atomic force microscopy and their crystalline quality by X-ray diffractometry. The corresponding transmission spectra were recorded with the aid of a double beam spectrophotometer in the spectral range of 400-1100 nm. No contaminants or Pt segregation were detected in the synthesized anatase phase TiO{sub 2} thin films composition. Titania crystallites growth inhibition was observed with the increase of the dopant concentration. The average optical transmittance in the visible-infrared spectral range of the films is higher than 85%, which makes them suitable for sensor applications.

  9. MOCVD of zirconium oxide thin films: Synthesis and characterization

    Science.gov (United States)

    Torres-Huerta, A. M.; Domínguez-Crespo, M. A.; Ramírez-Meneses, E.; Vargas-García, J. R.

    2009-02-01

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO 2 thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  10. MOCVD of zirconium oxide thin films: Synthesis and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atohuer@hotmail.com [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Instituto Politecnico Nacional, Km. 14.5 Carr. Tampico-Puerto Industrial, C.P. 89600, Altamira, Tamaulipas (Mexico); Dominguez-Crespo, M.A.; Ramirez-Meneses, E. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Instituto Politecnico Nacional, Km. 14.5 Carr. Tampico-Puerto Industrial, C.P. 89600, Altamira, Tamaulipas (Mexico); Vargas-Garcia, J.R. [ESIQIE, Departamento de Metalurgia y Materiales, Instituto Politecnico Nacional. A.P. 75-876, 07300 Mexico, D.F. (Mexico)

    2009-02-15

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO{sub 2} thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  11. Oxidative chemical vapor deposition of polyaniline thin films.

    Science.gov (United States)

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  12. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  13. Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

    Science.gov (United States)

    Yan, L.; Olsen, S. H.; Escobedo-Cousin, E.; O'Neill, A. G.

    2008-05-01

    This work presents a detailed study of ultrathin gate oxide integrity in strained Si metal oxide silicon field effect transistors (MOSFETs) fabricated on thin virtual substrates aimed at reducing device self-heating. The gate oxide quality and reliability of the devices are compared to those of simultaneously processed Si control devices and conventional thick virtual substrate devices that have the same Ge content (20%), strained Si channel thickness, and channel strain. The thin virtual substrates offer the same mobility enhancement as the thick virtual substrates (˜100% compared to universal mobility data) and are effective at reducing device self-heating. Up to 90% improvement in gate leakage current is demonstrated for the strained Si n-channel MOSFETs compared to that for the bulk Si controls. The lower leakage arises from the increased electron affinity in tensile strained Si and is significant due to the sizeable strain generated by using wafer-level stressors. The strain-induced leakage reductions also lead to major improvements in stress-induced leakage current (SILC) and oxide reliability. The lower leakage current of the thin and thick virtual substrate devices compares well to theoretical estimates based on the Wentzel-Kramers-Brillouin approximation. Breakdown characteristics also differ considerably between the devices, with the strained Si devices exhibiting a one order of magnitude increase in time to hard breakdown (THBD) compared to the Si control devices following high-field stressing at 17 MV cm-1. The strained Si devices are exempted from soft breakdown. Experimental based analytical leakage modeling has been carried out across the field range for the first time in thin oxides and demonstrates that Poole-Frenkel (PF) emissions followed by Fowler-Nordheim tunneling dominate gate leakage current at low fields in all of the devices. This contrasts to the frequently reported assumption that direct tunneling dominates gate leakage in ultrathin

  14. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  15. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wadati, H., E-mail: wadati@ap.t.u-tokyo.ac.jp [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Hongo, Tokyo 113-8656 (Japan); Fujimori, A. [Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2013-10-15

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers.

  16. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

    Science.gov (United States)

    Giorgis, V.; Morini, F.; Zhu, T.; Robillard, J.-F.; Wallart, X.; Codron, J.-L.; Dubois, E.

    2016-11-01

    In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K).

  17. Study of thin oxide films by electron, ion and synchrotron radiation beams

    CERN Document Server

    Sammelselg, V; Tarre, A; Asari, J; Rauhala, E; Arstila, K; Seppaelae, A; Zakharov, A; Aarik, J; Karlis, J; Martinson, Indrek

    2002-01-01

    Titanium oxide and zirconium oxide thin films deposited on silicon substrates were characterized using electron probe microanalysis (EPMA), Rutherford backscattering spectroscopy (RBS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning photoelectron microscopy (SPEM). The composition and mass thickness of the films were determined and the results of different methods compared. lt was revealed that the synchrotron radiation used for SPEM studies caused considerable modification of zirconia films grown at low temperatures. (author)

  18. Antimony Doped Tin Oxide Thin Films: Co Gas Sensor

    Directory of Open Access Journals (Sweden)

    P.S. Joshi

    2011-01-01

    Full Text Available Tin dioxide (SnO2 serves as an important base material in a variety of resistive type gas sensors. The widespread applicability of this semicoducting oxide is related both to its range of conductance variability and to the fact that it responds to both oxidising and reducing gases. The antimony doped tin-oxide films were prepared by spray pyrolysis method. The as-deposited films are blackish in colour. Addition of antimony impurity showed little increase in the thickness. The X-ray diffraction pattern shows characteristic tin oxide peaks with tetragonal structure. As the doping concentration of antimony was increased, new peak corresponding to Sb was observed. The intensity of this peak found to be increased when the Sb concentration was increased from 0.01 % to the 1 % which indicates the antimony was incorporated into the tin oxide. For gas sensing studies ohmic contacts were preferred to ensure the changes in resistance of sensor is due to only adsorption of gas molecule. The graph of I-V shows a straight line in nature which indicates the ohmic contact. The sensitivity of the sensor for CO gas was tested. The sensitivity of antimony doped tin oxide found to be increased with increasing Sb concentration. The maximum sensitivity was observed for Sb = 1 % at a working temperature of 250 °C.

  19. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    Science.gov (United States)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  20. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

    Directory of Open Access Journals (Sweden)

    Andrei Ionut Mardare

    2014-01-01

    Full Text Available A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven.

  1. Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten, Serang, 42435 (Indonesia); Lee, Kangil; Seo, Soonjoo; Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Yang, Dong Seok [Department of Physics Education, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Heo, Sung; Chung, Jae Gwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 440-600 (Korea, Republic of)

    2014-10-01

    Highlights: • The electronic property of indium zinc tin oxide thin films was investigated by using XPS and REELS. • The band gap varied with different In/Zn/Sn compositions. • The EXAFS results showed that the smaller Zn–Zn separation distance led to higher electron mobility. • The Sn/Zn composition ratio played a crucial role in improving the electrical properties of a-IZTO thin films. - Abstract: The electrical and optical properties of amorphous indium zinc tin oxide (a-IZTO) thin films were examined as a function of chemical composition. Effects of Sn/Zn composition ratio and In content on the electrical and optical properties of a-IZTO thin films are discussed. The electron mobility of thin film transistors with higher Sn/Zn composition ratio was dramatically improved due to a shorter zinc–zinc separation distance. The thin film transistor with the composition of In:Zn:Sn = 20:48:32 exhibits a high mobility of 30.6 cm{sup 2} V{sup −1} s{sup −1} and a high on–off current ratio of 10{sup 9}.

  2. Excimer laser ablation of thin titanium oxide films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Overschelde, O. van [Condensed Matter Physics Group, University of Mons-Hainaut, B-7000 Mons (Belgium); Dinu, S. [University of ' Valahia' , Targoviste (Romania); Guisbiers, G. [Condensed Matter Physics Group, University of Mons-Hainaut, B-7000 Mons (Belgium); Monteverde, F. [Materia Nova, Unit of Electronic Microscopy, B-7000 Mons (Belgium); Nouvellon, C. [Materia Nova, Inorganic and Analytical Chemistry, B-7000 Mons (Belgium); Wautelet, M. [Condensed Matter Physics Group, University of Mons-Hainaut, B-7000 Mons (Belgium)]. E-mail: michel.wautelet@umh.ac.be

    2006-04-30

    Thin titanium dioxide films are deposited on glass substrates by magnetron sputter deposition. They are irradiated in air, by means of a KrF excimer laser. The ablation rate is measured as a function of the laser fluence per pulse, F, and of the number of pulses, N. Above a fluence threshold, the films are partially ablated. The ablated thickness does not vary linearly with N. This is the signature of a negative feedback between the film thickness and the ablation rate. The origin of this negative feedback is shown to be due to either thermal or electronic effects, or both. At high F, the film detachs from the substrate.

  3. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures

    OpenAIRE

    Chu, Sheng

    2011-01-01

    Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was con...

  4. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    Science.gov (United States)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  5. Characterization of monolayer formation on aluminum-doped zinc oxide thin films.

    Science.gov (United States)

    Rhodes, Crissy L; Lappi, Simon; Fischer, Daniel; Sambasivan, Sharadha; Genzer, Jan; Franzen, Stefan

    2008-01-15

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  6. Development of wear resistant zirconium oxide thin films on stainless steel substrates

    Energy Technology Data Exchange (ETDEWEB)

    Then, I.K.; Mujahid, M. [School of Materials Engineering, Nanyang Technological Univ. (Singapore); Zhang, B. [Dou Yee Technologies Pte Ltd, Bedok Industrial Park C (Singapore)

    2005-07-01

    The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 {mu}m in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

  7. Unique Crystal Orientation of Poly(ethylene oxide) Thin Films by Crystallization Using a Thermal Gradient

    DEFF Research Database (Denmark)

    Gbabode, Gabin; Delvaux, Maxime; Schweicher, Guillaume

    2017-01-01

    Poly(ethylene oxide), (PEO), thin films of different thicknesses (220, 450, and 1500 nm) and molecular masses (4000, 8000, and 20000 g/mol) have been fabricated by spin-coating of methanol solutions onto glass substrates. All these samples have been recrystallized from the melt using a directional...

  8. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  9. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  10. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  11. Extremely thin bilayer electrolyte for solid oxide fuel cells (SOFCs) fabricated by chemical solution deposition (CSD).

    Science.gov (United States)

    Oh, Eun-Ok; Whang, Chin-Myung; Lee, Yu-Ri; Park, Sun-Young; Prasad, Dasari Hari; Yoon, Kyung Joong; Son, Ji-Won; Lee, Jong-Ho; Lee, Hae-Weon

    2012-07-03

    An extremely thin bilayer electrolyte consisting of yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is successfully fabricated on a sintered NiO-YSZ substrate. Major processing flaws are effectively eliminated by applying local constraints to YSZ nanoparticles, and excellent open circuit voltage and cell performance are demonstrated in a solid oxide fuel cell (SOFC) at intermediate operating temperatures.

  12. The growth of thin film epitaxial oxide-metal heterostructures

    CERN Document Server

    Wang, C

    1998-01-01

    films with lowest IR emissivity are those made from the purest targets despite their having comparable roughnesses to films from lower purity targets. The lowest emissivity achieved was in the range of 1.64% to 1.72% measured at 3.8 mu m for 1.5 to 1.8 mu m thick films. Modifications to standard idealized Drude theory have been made which, in a phenomenological way, take account of imperfections in the sputtered Al film, oxidation state and roughness. in electric properties of the Nb film and the reduction in crystalline quality of the MgO layer. The reduction of transition temperature to the superconducting state, Tc, and the similarly systematic increase in the Nb lattice parameter were observed consistent with oxygen content data reported in the literature, as the Nb became heavily oxidized. Examination of the surface of clean and oxidized Nb by atomic force microscopy, and deposition of MgO in UHV onto a previously oxidized Nb surface, suggested that the decrease in crystalline quality of the MgO can be a...

  13. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  14. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    Science.gov (United States)

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  16. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    K Shalini; S A Shivashankar

    2005-02-01

    Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical vapour deposition using an adducted -diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (∼ 550°C), while they grow with a strong (111) orientation as the temperature is raised (to 625°C). On Si(100), highly oriented films of cubic Sm2O3 at 625°C, and a mixture of monoclinic and cubic polymorphs of Sm2O3 at higher temperatures, are formed. Films grown on either substrate are very smooth and fine-grained. Infrared spectroscopic study reveals that films grown above 600°C are free of carbon.

  17. Fluorescence Microscopy of Nanoscale Silver Oxide Thin Films

    Institute of Scientific and Technical Information of China (English)

    PAN Xin-Yu; JIANG Hong-Bing; LIU Chun-Ling; GONG Qi-Huang; ZHANG Xi-Yao; ZHANG Qi-Feng; XU Bei-Xue; WU Jin-Lei

    2003-01-01

    The experimental conditions for photoactivated intermittent fluorescence from nanoscale silver oxide were studied with fluorescence microscopy. Strong fluorescence was observed from the Ag?O particles with size of 10-20nm excited with both blue and green light. We observed the saturation of photoexcitation with blue light and explained the experimental results using the model of agglomeration of silver atoms to form small clusters and the fluorescence of Ag2 and Ags clusters.

  18. Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

    Directory of Open Access Journals (Sweden)

    K. Durga Venkata Prasad

    2016-07-01

    Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

  19. Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors.

    Science.gov (United States)

    Chinnam, Krishna Chytanya; Gleskova, Helena

    2013-07-01

    Effect of heat treatment in aluminium oxide (AlO(x)) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlO(x) is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. For short UV/ozone exposure times the 100 degrees C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and - fourfold reduction in the gate dielectric current density. Transistors with AlO(x) prepared by 60-minute UV/ozone oxidation do not exhibit such behaviour. These results are explained in terms of reduced density of charged oxygen vacancies in the UV/ozone oxidized AlO(x).

  20. Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Rochdi, N., E-mail: rochdi.nabil@gmail.com [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS UPR 3118, Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Liudvikouskaya, K. [Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk (Belarus); Descoins, M.; Raissi, M.; Coudreau, C.; Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS UPR 3118, Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Oughaddou, H. [Commissariat a l' Energie Atomique, DSM-IRAMIS-SPCSI, Bat. 462, Saclay, 91191, Gif-sur-Yvette cedex (France); Universite de Cergy-Pontoise, LAMAp, 95000 Cergy-Pontoise cedex (France); D' Avitaya, F. Arnaud [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS UPR 3118, Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France)

    2011-07-29

    Ultra-thin magnesium oxide layers were elaborated by atomic layer deposition and oxidation process on silicon (100) starting from (2 x 1) thermally-reconstructed or hydrogen-terminated Si surfaces. Low-energy electron diffraction experiments show (2 x 3) and (3 x 3) reconstructions while depositing a magnesium monolayer on Si clean surfaces, and a 3-dimentional growth of the oxide as confirmed by ex-situ atomic force microscopy. For hydrogen-terminated or clean surfaces previously physisorbed by oxygen, uniform cobalt/magnesium-oxide/silicon stacks of layers are observed by transmission electron microscopy. Annealing above 150 deg. C leads to MgO dissolution and formation of an interfacial complex compound by inter-diffusion of Si and Co.

  1. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

    Science.gov (United States)

    Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

    2017-02-01

    This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

  2. Preparation of iron oxides using ammonium iron citrate precursor: Thin films and nanoparticles

    Science.gov (United States)

    Park, Sangmoon

    2009-09-01

    Ammonium iron citrate (C 6H 8O 7·nFe ·nH 3N) was used as a precursor for preparing both iron-oxide thin films and nanoparticles. Thin films of iron oxides were fabricated on silicon (111) substrate using a successive-ionic-layer-adsorption-and-reaction (SILAR) method and subsequent hydrothermal or furnace annealing. Atomic force microscopy (AFM) images of the iron-oxide films obtained under various annealing conditions show the changes of the micro-scale surface structures and the magnetic properties. Homogenous Fe 3O 4 nanoparticles around 4 nm in diameter were synthesized by hydrothermal reduction method at low temperature and investigated using transmission electron microscopy (TEM).

  3. Material and gas-sensing properties of tungsten oxide nanorod thin-films.

    Science.gov (United States)

    Kim, Yong Shin; Lee, Kwangyeol

    2009-04-01

    Tungsten oxide thin-films were deposited simply by drop-casting a solution containing single-crystalline and monodispersed W18O49 nanorods prepared by a large-scale colloidal synthesis route. They were verified to be highly porous, nonstoichiometric, and monoclinic crystal structure only with little carbon impurities. These material properties heavily reflect relevant nanostructural characteristics of the nanorods acting as a basic building block. It could be comprehended by the observed structure of randomly arranged tungsten oxide agglomerates formed by favorable parallel alignment of individual nanorod units. Tungsten oxide nanorod sensors exhibit sensitive detection capability even at room temperature to various reducing volatile organic compounds (VOCs). This anomalous performance seems to result from unique nanostructural features of the thin-films, allowing a high surface-to-volume ratio and a considerable amount of active sensing sites due to the highly anisotropic, nonstoichiometric structure of W18O49 nanorods.

  4. Investigation on the pure and fluorine doped vanadium oxide thin films deposited by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Ramamurthi, K., E-mail: krmurthin@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625021, Tamil Nadu (India)

    2016-05-01

    Vanadium oxide and fluorine doped vanadium oxide thin films were deposited on the micro-slide glass substrates at 400 °C by spray pyrolysis technique. Vanadium oxide films were deposited using 0.1 M ammonium meta vanadate aqua solution. Precursor solution used to deposit fluorine doped vanadium oxide films was prepared adding separately 5 wt.%, 10 wt.%, 15 wt.% and 20 wt.% of ammonium fluoride with the 0.1 M ammonium meta vanadate aqua solution. X-ray diffraction results showed that the films are in mixed phases of β-V{sub 2}O{sub 5}, V{sub 2}O{sub 5} and V{sub 3}O{sub 7}. Surface morphology and band gap of these films were modified due to different levels of fluorine doping. The average visible transmittance (500–800 nm) of vanadium oxide films is decreased due to low level concentration of fluorine doping. - Highlights: • Addition of a few ml HCl yielded clear precursor aqua solution. • F doped vanadium oxide films were deposited for less concentration of fluorine. • Low level fluorine doping modified the surface morphology of the thin films. • Direct band gap of vanadium oxide film is slightly increased by fluorine doping.

  5. Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

    Science.gov (United States)

    Zhu, Shuanglin

    Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

  6. Studies of oxide-based thin-layered heterostructures by X-ray scattering methods

    Energy Technology Data Exchange (ETDEWEB)

    Durand, O. [Thales Research and Technology France, Route Departementale 128, F-91767 Palaiseau Cedex (France)]. E-mail: olivier.durand@thalesgroup.com; Rogers, D. [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Universite de Technologie de Troyes, 10-12 rue Marie Curie, 10010 (France); Teherani, F. Hosseini [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Andrieux, M. [LEMHE, ICMMOCNRS-UMR 8182, Universite d' Orsay, Batiment 410, 91410 Orsay (France); Modreanu, M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)

    2007-06-04

    Some X-ray scattering methods (X-ray reflectometry and Diffractometry) dedicated to the study of thin-layered heterostructures are presented with a particular focus, for practical purposes, on the description of fast, accurate and robust techniques. The use of X-ray scattering metrology as a routinely working non-destructive testing method, particularly by using procedures simplifying the data-evaluation, is emphasized. The model-independent Fourier-inversion method applied to a reflectivity curve allows a fast determination of the individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on multilayered oxide structures, even when the number of the layers constitutive of the stack is not known a-priori. Fast Fourier transform-based procedure has also been employed successfully on high resolution X-ray diffraction profiles. A study of the reliability of the integral-breadth methods in diffraction line-broadening analysis applied to thin layers, in order to determine coherent domain sizes, is also reported. Examples from studies of oxides-based thin-layers heterostructures will illustrate these methods. In particular, X-ray scattering studies performed on high-k HfO{sub 2} and SrZrO{sub 3} thin-layers, a (GaAs/AlOx) waveguide, and a ZnO thin-layer are reported.

  7. Growth and characterization of single phase Cu2O by thermal oxidation of thin copper films

    Science.gov (United States)

    Choudhary, Sumita; Sarma, J. V. N.; Gangopadhyay, Subhashis

    2016-04-01

    We report a simple and efficient technique to form high quality single phase cuprous oxide films on glass substrate using thermal evaporation of thin copper films followed by controlled thermal oxidation in air ambient. Crystallographic analysis and oxide phase determination, as well as grain size distribution have been studied using X-ray diffraction (XRD) method, while scanning electron microscopy (SEM) has been utilized to investigate the surface morphology of the as grown oxide films. The formation of various copper oxide phases is found to be highly sensitive to the oxidation temperature and a crystalline, single phase cuprous oxide film can be achieved for oxidation temperatures between 250°C to 320°C. Cu2O film surface appeared in a faceted morphology in SEM imaging and a direct band gap of about 2.1 eV has been observed in UV-visible spectroscopy. X-ray photoelectron spectroscopy (XPS) confirmed a single oxide phase formation. Finally, a growth mechanism of the oxide film has also been discussed.

  8. Gas sensing of ruthenium implanted tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, T., E-mail: t.tesfamichael@qut.edu.au [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Ahsan, M. [William A. Cook Australia, 95 Brandl Street Eight Mile Plains, Brisbane, QLD 4113 (Australia); Notarianni, M. [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Groß, A.; Hagen, G.; Moos, R. [University of Bayreuth, Faculty of Engineering Science, Department of Functional Materials, Universitätsstr. 30, 95440 Bayreuth (Germany); Ionescu, M. [ANSTO, Institute for Environmental Research, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Bell, J. [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

    2014-05-02

    Different amounts of Ru were implanted into thermally evaporated WO{sub 3} thin films by ion implantation. The films were subsequently annealed at 600 °C for 2 h in air to remove defects generated during the ion implantation. The Ru concentrations of four samples have been quantified by Rutherford Backscattering Spectrometry as 0.8, 5.5, 9 and 11.5 at.%. The un-implanted WO{sub 3} films were highly porous but the porosity decreased significantly after ion implantation as observed by Transmission Electron Microscopy and Scanning Electron Microscopy. The thickness of the films also decreased with increasing Ru-ion dose, which is mainly due to densification of the porous films during ion implantation. From Raman Spectroscopy two peaks at 408 and 451 cm{sup −1} (in addition to the typical vibrational peaks of the monoclinic WO{sub 3} phase) associated with Ru were observed. Their intensity increased with increasing Ru concentration. X-ray Photoelectron Spectroscopy showed a metallic state of Ru with binding energy of Ru 3d{sub 5/2} at 280.1 eV. This peak position remained almost unchanged with increasing Ru concentration. The resistances of the Ru-implanted films were found to increase in the presence of NO{sub 2} and NO with higher sensor response to NO{sub 2}. The effect of Ru concentration on the sensing performance of the films was not explicitly observed due to reduced film thickness and porosity with increasing Ru concentration. However, the results indicate that the implantation of Ru into WO{sub 3} films with sufficient film porosity and film thickness can be beneficial for NO{sub 2} sensing at temperatures in the range of 250 °C to 350 °C. - Highlights: • Densification of WO{sub 3} thin films has occurred after Ru ion implantation. • Thickness and porosity of the films decrease with increasing Ru ion dose. • The amount of oxygen vacancies and defects increases with increasing Ru ion dose. • Ru has shown a crucial role in enhancing sensor response

  9. Oxidation of Light Alkanes Using Photocatalytic Thin Films

    Science.gov (United States)

    2006-01-01

    Transformation of the TiO2 from anatase to the rutile crystalline phase was also delayed in the mixed oxides leading to a photocatalyst with higher...the anatase phase of titania was detected in the S/T and Z/T catalysts, regardless of metal addition. The m-TiO2 catalysts averaged 15% rutile + 6...83 XRD patterns of TiO2, SiO2/TiO2 and ZrO2/TiO2 powders from sintered xerogels. A – indicates the (101) anatase reflection and R

  10. A novel thin film solid oxide fuel cell for microscale energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Jankowiski, A F; Morse, J D

    1999-05-01

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, mainfold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by codeposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting interfacial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thickness on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600--1000 C), thereby rendering this fuel cell system suitable for miniaturization. Scaling towards miniaturization is accomplished by utilizing novel micromaching approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable.

  11. Ellipsometric spectroscopy study of cobalt oxide thin films deposited by sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E.; Martinez-Flores, J.C. [Departamento de Ingenieria de Procesos e Hidraulica, UAM ? Iztapalapa, Av. Rafael Atlixco No. 186, Col. Vicentina, Mexico DF 09340 (Mexico); Huerta, L. [Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Avila, A.; Ortega-Lopez, M. [Depto. Ingenieria Electrica, SEES, CINVESTAV- IPN, Mexico DF 07360 (Mexico)

    2006-09-22

    Due to their unique optical properties, solar selective coatings enhance the thermal efficiency of solar photothermal converters. Hence it seems to be interesting to study the optical properties of promising materials as solar selective coatings. In an earlier work, it was demonstrated that sol-gel deposited cobalt oxide thin films possess suitable optical properties as selective coatings. In this work, cobalt oxide thin films were prepared by same technique and their optical properties were analyzed as a function of the dipping time of the substrate in the sol, using the spectroscopy ellipsometry, atomic force microscopy and X-ray photoelectron spectroscopy techniques. The optical constants (n and k) for these films, in the 200-800nm range, are reported as a function of the dipping time. The fitting of ellipsometric data, I{sub s} and I{sub c}, for the glass substrate and the cobalt oxide thin film, as modeled with the Lorentz and Tauc-Lorentz dispersion relations, indicated that the film microstructure resembles a multilayer stack with voids. From these results, the Co{sub 3}O{sub 4} and void percentages in the film were estimated. Both, thin film thickness and void/Co{sub 3}O{sub 4} percentage ratio, were determined to be strongly dependent on the immersion time. Furthermore, the total thickness of a multilayered film was found to be the sum of thickness of each individual layer. (author)

  12. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

    Indian Academy of Sciences (India)

    M S Hegde

    2001-10-01

    Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.

  13. Investigations on bactericidal properties of molybdenum-tungsten oxides combinatorial thin film material libraries.

    Science.gov (United States)

    Mardare, Cezarina Cela; Hassel, Achim Walter

    2014-11-10

    A combinatorial thin film material library from the molybdenum-tungsten refractory metals oxides system was prepared by thermal coevaporation, and its structural and morphological properties were investigated after a multiple step heat treatment. A mixture of crystalline and amorphous oxides and suboxides was obtained, as well as surface structuring caused by the enrichment of molybdenum oxides in large grains. It was found that the oxide phases and the surface morphology change as a function of the compositional gradient. Tests of the library antimicrobial activity against E. coli were performed and the antimicrobial activity was proven in some defined compositional ranges. A mechanism for explaining the observed activity is proposed, involving a collective contribution from (i) increased local acidity due to the enrichment in large grains of molybdenum oxides with different stoichiometry and (ii) the release of free radicals from the W18O49 phase under visible light.

  14. Electrical Conductivity of Chlorophyll with Polythiophene Thin Film on Indium Tin Oxide as P-N Heterojunction Solar Cell

    Science.gov (United States)

    Aziz, M. F. A.; Hasiah, S.; Rasul, F. L. M.; Senin, H. B.

    2009-06-01

    The aim of this research was to study the electrical conductivity for electrical conductivity of chlorophyll with polythiophene (PT) thin film on indium tin oxide as P-N heterojunction solar cell. The polythiophene thin film is deposited to the Indium Tin Oxide (ITO) substrate using electrochemistry method. The chlorophyll (CHLO) thin film then been coated on polythiophene thin film using spin coated method. Current and voltage of ITO/PT/CHLO thin film is measured in the dark and under different light intensity using four points probe. The result shows that combination of the thinnest polythiophene thin film with the thickest chlorophyll thin film produce the highest conductivity reach up to ±0.1 Sm-1 (raise 22% under illumination compared to the electrical conductivity in the dark condition).

  15. Heteroepitaxy of Cerium Oxide Thin Films on Cu(111

    Directory of Open Access Journals (Sweden)

    Josef Mysliveček

    2015-09-01

    Full Text Available An important part of fundamental research in catalysis is based on theoretical and modeling foundations which are closely connected with studies of single-crystalline catalyst surfaces. These so-called model catalysts are often prepared in the form of epitaxial thin films, and characterized using advanced material characterization techniques. This concept provides the fundamental understanding and the knowledge base needed to tailor the design of new heterogeneous catalysts with improved catalytic properties. The present contribution is devoted to development of a model catalyst system of CeO2 (ceria on the Cu(111 substrate. We propose ways to experimentally characterize and control important parameters of the model catalyst—the coverage of the ceria layer, the influence of the Cu substrate, and the density of surface defects on ceria, particularly the density of step edges and the density and the ordering of the oxygen vacancies. The large spectrum of controlled parameters makes ceria on Cu(111 an interesting alternative to a more common model system ceria on Ru(0001 that has served numerous catalysis studies, mainly as a support for metal clusters.

  16. Flat-Band Potentials of Molecularly Thin Metal Oxide Nanosheets.

    Science.gov (United States)

    Xu, Pengtao; Milstein, Tyler J; Mallouk, Thomas E

    2016-05-11

    Exfoliated nanosheets derived from Dion-Jacobson phase layer perovskites (TBAxH1-xA2B3O10, A = Sr, Ca, B = Nb, Ta) were grown layer-by-layer on fluorine-doped tin oxide and gold electrode surfaces. Electrochemical impedance spectra (EIS) of the five-layer nanosheet films in contact with aqueous electrolyte solutions were analyzed by the Mott-Schottky method to obtain flat-band potentials (VFB) of the oxide semiconductors as a function of pH. Despite capacitive contributions from the electrode-solution interface, reliable values could be obtained from capacitance measurements over a limited potential range near VFB. The measured values of VFB shifted -59 mV/pH over the pH range of 4-8 and were in close agreement with the empirical correlation between conduction band-edge potentials and optical band gaps proposed by Matsumoto ( J. Solid State Chem. 1996, 126 (2), 227-234 ). Density functional theory calculations showed that A-site substitution influenced band energies by modulating the strength of A-O bonding, and that subsitution of Ta for Nb on B-sites resulted in a negative shift of the conduction band-edge potential.

  17. CSA doped polypyrrole-zinc oxide thin film sensor

    Science.gov (United States)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  18. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    Science.gov (United States)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  19. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  20. Photoluminescence and energy transfer processes in rare earth ion doped oxide thin films with substrate heating

    Science.gov (United States)

    Xiao, Zhisong; Zhou, Bo; Yan, Lu; Zhu, Fang; Zhang, Feng; Huang, Anping

    2010-02-01

    Tm-Er codoped amorphous aluminum oxide thin films were prepared by pulsed laser deposition. Broadband photoluminescence in the wavelength region of 1400-1700 nm comprised of two emissions at around 1532 and 1620 nm was observed. PL performance was investigated as a function of the substrate-heating temperature. Possible energy transfer processes involved in the heat treatment were discussed and nonradiative decay rates were evaluated, by comparing the inverse of measured lifetimes with the calculated radiative decay rates. Our results suggest that Tm-Er codoped Al 2O 3 thin film might be potential candidate as broadband light sources and amplifiers.

  1. Optical and Electrochromic Properties of E-Beam Evaporated Nickel Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    K.J. Patel

    2011-01-01

    Full Text Available Nickel oxide (NiO thin films were deposited by e-beam evaporation on glass and ITO coated glass substrates initially held at room temperature without post-heat treatments. The structural and optical properties were investigated using glancing incident X-ray diffractometer (GIXRD and spectrophotometer. The electrochromic (EC behavior of NiO thin film was investigated using electrochemical technique viz. cyclic voltammetry, constant current measurement, and chronoamperometry in 1 M KOH electrolyte. The transmittance modulation and switching time with different operating voltage were also studied.

  2. Interaction of Zr with oxidized and partially reduced ceria thin films

    Science.gov (United States)

    Wang, Weijia; Hu, Shanwei; Han, Yong; Pan, Xiao; Xu, Qian; Zhu, Junfa

    2016-11-01

    The growth and electronic properties of Zr on the ceria thin films were studied by X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and work function measurements. Metallic zirconium was vapor-deposited on the well-ordered fully oxidized CeO2(111) and partially reduced CeO2-x(111) (0 CeO2(111) thin film at low coverages due to the strong interaction between Zr and CeO2(111).

  3. High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

    Science.gov (United States)

    Chong, Eugene; Jo, Kyoung Chul; Lee, Sang Yeol

    2010-04-01

    Time dependence of the threshold voltage (Vth) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 °C. X-ray photoelectron spectroscopy results show the decrease in oxygen vacancies by Hf metal cations in a-HIZO systems after annealing process. High stability of a-HIZO systems has been observed due to low charge injection from the channel layer. Hf metal cations have been effectively incorporated into the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation.

  4. The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

    Science.gov (United States)

    Gu, Deen; Zhou, Xin; Guo, Rui; Wang, Zhihui; Jiang, Yadong

    2017-03-01

    One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOx) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOx thin films. Both undoped and Y-doped VOx thin films are amorphous due to the relatively low deposition temperature. Y-doped VOx thin films exhibit smoother surface morphology than VOx due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOx to 2% due to the introduction of Y. Moreover, Y-doped VOx thin films have a low 1/f noise level as VOx ones. Y-doping provides an attractive approach for preparing VOx thermal-sensitive materials with enhanced performance for microbolometers.

  5. Fluorescence study on the interaction between apoCopC and cupric

    Institute of Scientific and Technical Information of China (English)

    PANG Erguo; ZHAO Yaqin; YANG Binsheng

    2005-01-01

    The interaction between apoCopC and cupric was investigated by fluorescence spectra, in phosphate (20 mmol/L) buffer at pH 6.0. Results suggest that the environment is measured to be hydrophobic completely around tryptophan (83). At the same time, apoCopC fluorescence at 320 nm was significantly quenched with the addition of cupric and the 1:1 stoichiometric ratio of apoCopC to cupric was confirmed by fluorescence. In addition, the conditional binding constants were calculated to be Kcu-Copc = (1.8(0.58)× 1013 mol-1 L on the basis of the results of fluorescence titration curves. The apoCopC has the ability to bind specifically cupricion.

  6. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    Science.gov (United States)

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-04-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

  7. Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

    Institute of Scientific and Technical Information of China (English)

    吴绍航; 张楠; 胡永生; 陈红; 蒋大鹏; 刘星元

    2015-01-01

    Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

  8. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  9. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    Science.gov (United States)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  10. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  11. Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

    1996-01-01

    Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

  12. An investigation of the electrical transport properties of graphene-oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venugopal, Gunasekaran, E-mail: pvsguna@gmail.com [Nano Materials and System Lab, Department of Mechanical Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Faculty of Nanosciences and Technology Department, School of Nanosciences and Technology, Karunya University, Coimbatore 641 114, Tamil Nadu (India); Krishnamoorthy, Karthikeyan [Nano Materials and System Lab, Department of Mechanical Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Mohan, Rajneesh [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Kim, Sang-Jae, E-mail: kimsangj@jejunu.ac.kr [Nano Materials and System Lab, Department of Mechanical Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Faculty of Mechatronics Engineering and Research Institute of Advanced Technology, Jeju National University, Jeju 690-756 (Korea, Republic of)

    2012-01-16

    Highlights: Black-Right-Pointing-Pointer Four terminal electrical transport characterization of graphene-oxide thin film. Black-Right-Pointing-Pointer Low temperature R-T and I-V studies on GO thin film. Black-Right-Pointing-Pointer Electrical transport obeys VRH mechanism supported by Raman spectra. Black-Right-Pointing-Pointer GO characterizations by SEM, AFM, UV-vis, XRD, FTIR and XPS. Black-Right-Pointing-Pointer GO-FET confirms the p-type semiconducting behavior. - Abstract: The electrical transport properties of graphene-oxide (GO) thin films were investigated. The GO was synthesized by a modified Hummers method and was characterized by X-ray diffraction and UV-visible spectroscopy. The thin film of GO was made on a Si/SiO{sub 2} substrate by drop-casting. The surface morphology of the GO film was analyzed by using scanning electron microscopy and atomic force microscopy techniques. Temperature dependent resistance and current-voltage measurements were studied using four-terminal method at various temperatures (120, 150, 175, 200, 250 and 300 K) and their charge transport followed the 3D variable range hopping mechanism which was well supported by Raman spectra analysis. The presence of various functional groups in GO were identified by using high resolution X-ray photo electron (XPS) and Fourier transform infra red (FT-IR) spectroscopic techniques. Graphene-oxide thin film field effect transistor devices show p-type semiconducting behavior with a hole mobility of 0.25 cm{sup 2} V{sup -1} s{sup -1} and 0.59 cm{sup 2} V{sup -1} s{sup -1} when measured in air and vacuum respectively.

  13. Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

    Science.gov (United States)

    Parthiban, S.; Park, K.; Kim, H.-J.; Yang, S.; Kwon, J.-Y.

    2014-11-01

    We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ˜4.3 × 107.

  14. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    Directory of Open Access Journals (Sweden)

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  15. Manganese oxide thin films deposited by SILAR method for supercapacitor application

    Science.gov (United States)

    Jadhav, P. R.; Shinde, V. V.; Navathe, G. J.; Karanjkar, M. M.; Patil, P. S.

    2013-06-01

    The amorphous MnO2 thin films were prepared by simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The prepared thin films were characterized by means of X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). The electrochemical study was carried out by cyclic voltammetry in 1 M Na2SO4 electrolyte. The films showed the maximum specific capacitance of 243 F.g-1 at the scan rate of 10 mV.s-1. It is observed that two distinct peaks occurs in cyclic voltammogram during charging and discharging which correspond to the electrochemical oxidation and reduction reaction and different oxidation states of the Mn as Mn2+ and Mn3+. Further, the increase in specific capacitance is observed with the increase in the precursor concentration.

  16. Gas Barrier and Separation Behavior of Graphene Oxide Nanobrick Wall Thin Films

    Science.gov (United States)

    Grunlan, Jaime

    2015-03-01

    In many cases, electronics packaging requires electrical conductivity and barrier to oxygen, even under humid conditions. These two properties have simultaneously been realized through the use of surfactant-free aqueous layer-by-layer (LbL) processing, in the form of a polymer composite nanocoating. By layering graphene oxide (GO) with polyethyleneimine (PEI), a ``nano brick wall'' structure has been created, imparting gas barrier properties to the film. Reducing the graphene oxide with a thermal treatment further produces high oxygen barrier in humid conditions and imparts high electrical conductivity (σ ~ 1750 S/m). These thin films (300), making them interesting for gas purification membranes. The flexible nature of the aforementioned thin films, along with their excellent combination of transport properties, make them ideal candidates for use in a broad range of electronics and other packaging applications.

  17. Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates

    CERN Document Server

    Sridaran, Suresh

    2009-01-01

    We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q of 148,000 for the quasi-TE mode have been obtained. This process will enable the integration of photonic structures with thin buried oxide SOI based electronics.

  18. Silver Nanoparticle-Embedded Thin Silica-Coated Graphene Oxide as an SERS Substrate

    Directory of Open Access Journals (Sweden)

    Xuan-Hung Pham

    2016-09-01

    Full Text Available A hybrid of Ag nanoparticle (NP-embedded thin silica-coated graphene oxide (GO@SiO2@Ag NPs was prepared as a surface-enhanced Raman scattering (SERS substrate. A 6 nm layer of silica was successfully coated on the surface of GO by the physical adsorption of sodium silicate, followed by the hydrolysis of 3-mercaptopropyl trimethoxysilane. Ag NPs were introduced onto the thin silica-coated graphene oxide by the reduction of Ag+ to prepare GO@SiO2@Ag NPs. The GO@SiO2@Ag NPs exhibited a 1.8-fold enhanced Raman signal compared to GO without a silica coating. The GO@SiO2@Ag NPs showed a detection limit of 4-mercaptobenzoic acid (4-MBA at 0.74 μM.

  19. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  20. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method.

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-08

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]n(RS)[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  1. Thin coatings for protecting titanium aluminides in high-temperature oxidizing environments

    Science.gov (United States)

    Wiedemann, K. E.; Taylor, P. J.; Clark, R. K.; Wallace, T. A.

    1991-01-01

    Titanium aluminides have high specific strengths at high temperatures but are susceptible to environmental attack. Their use in many aerospace applications would require that they be protected with coatings that, for structural efficiency, must be thin. It is conceivable that acceptable coatings might be found in several oxide systems, and consequently, oxide coatings of many compositions were prepared from sol-gels for study. Response-surface methodology was used to refine coating compositions and factorial experiments were used to develop coating strategies. Oxygen permeability diagrams of two-layer coatings for several oxide systems, an analysis of multiple-layer coatings on rough and polished surfaces, and modeling of the oxidation weight gain are presented.

  2. Boron-doped cobalt oxide thin films and its electrochemical properties

    Science.gov (United States)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  3. MOS structure fabrication by thermal oxidation of multilayer metal thin films

    Institute of Scientific and Technical Information of China (English)

    Mohammad Orvatiniat; Atefeh Chahkoutahi

    2011-01-01

    A novel approach for the fabrication of a metal oxide semiconductor (MOS) structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy.This two-layer structure was thermally oxidized at 400 ℃ for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.

  4. Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

    Science.gov (United States)

    Jiang, Guixia; Liu, Ao; Liu, Guoxia; Zhu, Chundan; Meng, You; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-10-01

    Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.

  5. Water as origin of hysteresis in zinc tin oxide thin-film transistors.

    Science.gov (United States)

    Fakhri, M; Johann, H; Görrn, P; Riedl, T

    2012-09-26

    The hysteresis behavior of transparent zinc tin oxide (ZTO) thin film transistors (TFTs) is identified to be a result of short-term bias stress induced by the measurement. The related density of shallow defect states can be adjusted by the amount of water in the ambient. Time-resolved studies of the TFTs under varied ambient demonstrate that hysteresis can be immediately switched on and off by the adsorption and desorption of water, respectively. These findings are expected to be of general importance also for other oxide-based TFTs.

  6. Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors.

    Science.gov (United States)

    Cheong, Woo-Seok; Shin, Jae-Heon; Chung, Sung Mook; Hwang, Chi-Sun; Lee, Jeong-Min; Lee, Jong-Ho

    2012-04-01

    Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1-2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn-Sn-oxide, causing a larger shift of the threshold voltage (deltaV(th)).

  7. Photocurrent enhancement of d.c. sputtered copper oxide thin films

    Indian Academy of Sciences (India)

    P Samarasekara; M A K Mallika Arachchi; A S Abeydeera; C A N Fernando; A S Disanayake; R M G Rajapakse

    2005-08-01

    Copper oxide (CuO) thin films with photocurrent as high as 25 Α/cm2 were deposited on conductive glass substrates using d.c. reactive sputtering. This was the highest reported photocurrent for sputtered -type copper oxide measured in the electrolyte KI. The photocurrent drastically increased up to 25 Α/cm2 as the sputtering pressure and the substrate temperature were increased up to 8.5 mbar and 192°C, respectively. All the synthesized films contained single phase of CuO in this range of pressure and substrate temperature. Variation of the photocurrent, photovoltage, structure and absorbance with deposition conditions were studied in detail.

  8. Thulium and ytterbium-doped titanium oxide thin films deposited by ultrasonic spray pyrolysis

    OpenAIRE

    Forissier, S.; Roussel, H.; Chaudouet, P.; Pereira, A.; Deschanvres, J.-L.; B. Moine

    2012-01-01

    Thin films of thulium and ytterbium-doped titanium oxide were grown by metal-organic spray pyrolysis deposition from titanium(IV)oxide bis(acetylacetonate), thulium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) and ytterbium(III) tris(acetylacetonate). Deposition temperatures have been investigated from 300{\\deg}C to 600{\\deg}C. Films have been studied regarding their crystallity and doping quality. Structural and composition characterisations of TiO2:Tm,Yb were performed by electron micr...

  9. Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

    Science.gov (United States)

    Iechi, Hiroyuki; Watanabe, Yasuyuki; Yamauchi, Hiroshi; Kudo, Kazuhiro

    We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.

  10. RF-sputtering of doped zinc oxides thin films, the effect of low substrate heating deposition

    OpenAIRE

    Ahmed, Amira Ahmed Abdelmoneam Mohamed

    2017-01-01

    Cataloged from PDF version of article. Thesis (M.S.): Bilkent University, Department of Materials Science and Nanotechnology, İhsan Doğramacı Bilkent University, 2017. Includes bibliographical references (leaves 61-67). Zinc Oxide (ZnO) has been studied since 1930’s as a candidate for the electronic applications, as it possesses a wide bandgap of 3.4 eV. While in the last 3 decades the technology of thin films were more interested in Doped zinc oxide (ZnO) for their promising potenti...

  11. Properties of Ultra-Thin Hafnium Oxide and Interfacial Layer Deposited by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    Taeho Lee; Young-Bae Kim; Kyung-Il Hong; Duck-Kyun Choi; Jinho Ahn

    2004-01-01

    Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.

  12. Oxidation of thin ErSi 1.7 overlayers on Si(111)

    Science.gov (United States)

    Guerfi, N.; Tan, T. A. Nguyen; Veuillen, J. Y.; Lollman, D. B.

    The oxidation of ErSi 1.7 thin films, epitaxially grown on Si(111)(7×7) surfaces by solid phase epitaxy, has been investigated by X-ray and UV photoelectron spectroscopies. Oxidation has been carried out at room temperature under low pressure (≤ 2×10 -5mbar) and 1 atm of oxygen, and at 700°C under 2 × 10 -5 mbar of oxygen. In all cases, both Si and Er react with oxygen. At room temperature the reaction depends on the pressure. Under low pressure the silicide surface is rather inert: a chemisorption phase of oxygen on Si and Er is detected only after exposures < 10 3 langmuir. High oxygen pressure produces a thin layer of mixed SiO 2, Si su☐ides and Er 2O 3. At 700°C, SiO 2 and Er 2O 3 are simultaneously formed, thus implying the decomposition of the silicide. The oxide layer has a SiO 2 termination at the surface. Only about half of the decomposed Si atoms react with oxygen. The preferential oxidation of Er is attributed to the high value of the heat of formation of Er 2O 3. An oxidation mechanism is proposed.

  13. Properties of Multifunctional Oxide Thin Films Despostied by Ink-jet Printing

    OpenAIRE

    Fang, Mei

    2012-01-01

    Ink-jet printing offers an ideal answer to the emerging trends and demands of depositing at ambient temperatures picoliter droplets of oxide solutions into functional thin films and device components with a high degree of pixel precision. It is a direct single-step mask-free patterning technique that enables multi-layer and 3D patterning. This method is fast, simple, easily scalable, precise, inexpensive and cost effective compared to any of other methods available for the realization of the ...

  14. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Marsal, A. [Dept Enginyeria Electronica and Center of Research in Nanoengineering, Universitat Politècnica Catalunya, Barcelona (Spain); Carreras, P. [Dept Física Aplicada i Òptica, Universitat de Barcelona, Barcelona (Spain); Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R. [Dept Enginyeria Electronica and Center of Research in Nanoengineering, Universitat Politècnica Catalunya, Barcelona (Spain); Bertomeu, J. [Dept Física Aplicada i Òptica, Universitat de Barcelona, Barcelona (Spain); Antony, A. [Dept Física Aplicada i Òptica, Universitat de Barcelona, Barcelona (Spain); Indian Institute of Technology, Bombay (India)

    2014-03-31

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band.

  15. Synthesis and Characterization of Potentiostatically Electrodeposited Tungsten Oxide Thin Films for Smart Window Application

    Science.gov (United States)

    More, A. J.; Patil, R. S.; Dalavi, D. S.; Suryawanshi, M. P.; Burungale, V. V.; Kim, J. H.; Patil, P. S.

    2017-02-01

    Tungsten oxide (WO3) thin films have been synthesized using electrodeposition in potentiostatic mode and the effect of different deposition potentials on their structural, morphological, optical, and electrochromic (EC) properties investigated. The deposition potential versus saturated calomel electrode (SCE) was varied from -0.35 V to -0.50 V in steps of -0.05 V for 20 min each. The electrodeposited WO3 thin films were characterized using x-ray diffraction analysis, micro-Raman spectroscopy, field-emission scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectrophotometry, revealing amorphous nature with nanograins having average size from 40 nm to 60 nm. The EC performance of the WO3 thin films exhibited response times of 1.35 s for bleaching ( t b) and 3.1 s for coloration ( t c) with excellent reversibility of 64.36%. The highest coloration efficiency of the electrodeposited WO3 thin films was found to be 87.95 cm2/C. The electrochemical reversibility and stability of the WO3 thin films obtained in this study make them promising for use in smart window applications.

  16. Parameters controlling microstructures and resistance switching of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Yazdanparast, Sanaz

    2016-12-01

    Cuprous oxide (Cu2O) thin films were electrodeposited cathodically from a highly alkaline bath using tartrate as complexing agent. Different microstructures for Cu2O thin films were achieved by varying the applied potential from -0.285 to -0.395 V versus a reference electrode of Ag/AgCl at 50 °C in potentiostatic mode, and separately by changing the bath temperature from 25 to 50 °C in galvanostatic mode. Characterization experiments showed that both grain size and orientation of Cu2O can be controlled by changing the applied potential. Applying a high negative potential of -0.395 V resulted in smaller grain size of Cu2O thin films with a preferred orientation in [111] direction. An increase in the bath temperature in galvanostatic electrodeposition increased the grain size of Cu2O thin films. All the films in Au/Cu2O/Au-Pd cell showed unipolar resistance switching behavior after an initial FORMING process. Increasing the grain size of Cu2O thin films and decreasing the top electrode area increased the FORMING voltage and decreased the current level of high resistance state (HRS). The current in low resistance state (LRS) was independent of the top electrode area and the grain size of deposited films, suggesting a filamentary conduction mechanism in unipolar resistance switching of Cu2O.

  17. The electromagnetic interference shielding effect of indium-zinc oxide/silver alloy multilayered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Won Mok [Materials Design Lab., Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)]. E-mail: wmkim@kist.re.kr; Young Ku, Dae [Department of Materials Engineering, Hankuk Aviation University, Seoul 421-791 (Korea, Republic of); Lee, In-kyu [Department of Materials Engineering, Hankuk Aviation University, Seoul 421-791 (Korea, Republic of); Seo, Yong Woon [ITM, Incorporated, Anyang, Kyunggi-do 431-060 (Korea, Republic of); Cheong, Byung-ki [Materials Design Lab., Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lee, Taek Sung [Materials Design Lab., Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, In-ho [Materials Design Lab., Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lee, Kyeong Seok [Materials Design Lab., Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

    2005-02-14

    A study was made to examine the electromagnetic interference (EMI) shielding effect of multilayered thin films in which indium-zinc oxide (IZO) thin films and Ag or Ag alloy thin films were deposited alternately at room temperature using a RF magnetron sputtering. The optical, electrical and morphological properties of the constituent layers were analyzed using an ultraviolet-visible photospectrometer, a 4-point probe and an atomic force microscopy (AFM), respectively. The EMI shielding effect of the multilayered thin films was also measured using a coaxial transmission line method. A detailed analysis showed that the control of the film morphologies, i.e., the surface roughnesses of the constituent metal layers was essential to an accurate estimate of the electrical and optical properties of multilayered coatings. It was shown that properly designed IZO/Ag alloy multilayered thin films could yield a visible transmission of more than 70%, a sheet resistance of less than 1 {omega}/sq., together with an EMI shielding effect larger than 45 dB in the range from 30 to 1000 MHz.

  18. Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

    Energy Technology Data Exchange (ETDEWEB)

    Maeng, W.J. [Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, WI 53706 (United States); Choi, Dong-Won [Division of Materials Science and Engineering, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul, 133-719 (Korea, Republic of); Park, Jozeph, E-mail: jozeph.park@gmail.com [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Park, Jin-Seong, E-mail: jsparklime@hanyang.ac.kr [Division of Materials Science and Engineering, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul, 133-719 (Korea, Republic of)

    2015-11-15

    Transparent conducting Indium oxide (InO{sub x}) thin films were deposited by atomic layer deposition at low deposition temperatures below 100 °C. For the comparative study with liquid precursors in low temperature thermal ALD, diethyl[1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]-Indium, [3-(dimethylamino-kN)propyl-kC]dimethyl-Indium, and triethyl indium (TEIn) were used as the In precursors. Ozone was used as the oxidant for all precursors. InO{sub x} films grown using the three precursors all exhibit relatively low electrical resistivity below 10{sup −3} Ω cm at temperatures above 150 °C. Below 100 °C, the lowest resistivity (2 × 10{sup −3} Ω cm) was observed in the films grown with TEIn. The electrical, structural and optical properties were systematically investigated as functions of the deposition temperature and precursors. - Highlights: • InO{sub x} thin films were deposited by ALD at extremely low deposition temperatures below 100 °C. • InO{sub x} films exhibit relatively low electrical resistivity below 10{sup −3} Ω cm at temperatures above 150 °C. • Ozone stimulate the chemical reactions to yield dense indium oxide films at low temperatures.

  19. Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

    2014-07-01

    Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline

  20. Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Chang; YAN Yun-Jie; ZHU Jing

    2007-01-01

    Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.

  1. Identification of nanoscale structure and morphology reconstruction in oxidized a-SiC:H thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vasin, A.V.; Rusavsky, A.V.; Nazarov, A.N.; Lysenko, V.S.; Lytvyn, P.M.; Strelchuk, V.V. [Lashkaryov Institute of Semiconductor Physics, 41 Nauki Pr., Kiev 03028 (Ukraine); Kholostov, K.I.; Bondarenko, V.P. [Belarusian State University of Informatics and Radioelectronics, 6P. Brovki Str., Minsk 220013 (Belarus); Starik, S.P. [Bakul Institute of Superhard Materials, 2 Avtzavodskaya Str., Kiev 04074 (Ukraine)

    2012-11-01

    Highlights: Black-Right-Pointing-Pointer Increase of magnetron discharge power results in densification of a-SiC:H thin films. Black-Right-Pointing-Pointer The denser a-SiC:H material the better resistance to oxidation by oxygen. Black-Right-Pointing-Pointer Oxidation of soft a-SiC:H films can result in increase of electric conductivity. Black-Right-Pointing-Pointer Formation of graphitic clusters was found in a-SiC:H after annealing in oxygen. - Abstract: Oxidation behavior of a-SiC:H layers deposited by radio-frequency magnetron sputtering technique was examined by Kelvin probe force microscopy (KPFM) in combination with scanning electron microscopy, Fourier-transform infra-red spectroscopy and submicron selected area Raman scattering spectroscopy. Partially oxidized a-SiC:H samples (oxidation at 600 Degree-Sign C in oxygen) were examined to clarify mechanism of the oxidation process. Nanoscale and microscale morphological defects (pits) with dimension of about 50 nm and several microns respectively have appeared after thermal treatment. KPFM measurements exhibited the surface potential of the material in micro pits is significantly smaller in comparison with surrounding material. Submicron RS measurements indicates formation of graphite-like nano-inclusions in the pit defects. We conclude that initial stage of oxidation process in a-SiC:H films takes place not homogeneously throughout the layer but it is initiated in local nanoscale regions followed by spreading over all layer.

  2. Waters of Hydration of Cupric Hydrates: A Comparison between Heating and Absorbance Methods

    Science.gov (United States)

    Barlag, Rebecca; Nyasulu, Frazier

    2011-01-01

    The empirical formulas of four cupric hydrates are determined by measuring the absorbance in aqueous solution. The Beer-Lambert Law is verified by constructing a calibration curve of absorbance versus known Cu[superscript 2+](aq) concentration. A solution of the unknown hydrate is prepared by using 0.2-0.3 g of hydrate, and water is added such…

  3. First nucleation steps of vanadium oxide thin films studied by XPS inelastic peak shape analysis

    Energy Technology Data Exchange (ETDEWEB)

    Gracia, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-U. Sevilla) and Dpt. Q. Inorganica, c/Americo Vespucio s/n, E-41092 Sevilla (Spain)]. E-mail: torres@icmse.isic.es; Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-U. Sevilla) and Dpt. Q. Inorganica, c/Americo Vespucio s/n, E-41092 Sevilla (Spain); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-U. Sevilla) and Dpt. Q. Inorganica, c/Americo Vespucio s/n, E-41092 Sevilla (Spain); Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-U. Sevilla) and Dpt. Q. Inorganica, c/Americo Vespucio s/n, E-41092 Sevilla (Spain)

    2005-09-30

    The initial states of deposition of vanadium oxide thin films have been studied by analysis of the peak shape (both inelastic background and elastic contributions) of X-ray photoemission spectra (XPS) after successive deposition experiments. This study has permitted to assess the type of nucleation and growth mechanisms of the films. The experiments have been carried out in situ in the preparation chamber of a XPS spectrometer. Thin films of vanadium oxide have been prepared on Al{sub 2}O{sub 3} and TiO{sub 2} by means of thermal evaporation, ion beam assisted deposition and plasma enhanced chemical vapour deposition. The thin films prepared by the first two procedures consisted of V{sub 2}O{sub 4}, while those prepared by the latter had a V{sub 2}O{sub 5} stoichiometry. The analysis of the inelastic background of the photoemission spectra has shown that the films prepared by thermal evaporation on Al{sub 2}O{sub 3} are formed by big particles that only cover completely the surface of the substrate when their height reaches 16 nm. By contrast, the thin films prepared with assistance of ions on Al{sub 2}O{sub 3} or with plasma on TiO{sub 2} consist of smaller particles that succeed in covering the substrate surface already for a height of approximately 4 nm. Thin films prepared by plasma-assisted deposition on Al{sub 2}O{sub 3} depict an intermediate situation where the substrate is completely covered when the particles have a height of approximately 6 nm. The type of substrates, differences in the deposition procedure or the activation of the adatoms by ion bombardment are some of the factors that are accounted for by to explain the different observed behaviours.

  4. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  5. Bimodal spatial distribution of pores in anodically oxidized aluminum thin films

    Science.gov (United States)

    Behnke, J. F.; Sands, T.

    2000-12-01

    Though porous anodic aluminum oxide has been the subject of considerable research since the 1950s, little attention has been devoted to the characterization of the self-organization of the pore structures, and fewer of these studies have focused on anodization of thin films. The degree to which these structures self-organize, however, could play a vital role in future applications of porous anodic aluminum oxide. In this study a model is developed to describe pore ordering in thin anodized aluminum films. The model is based on a radial distribution function approach to describe the interpore spacings. Idealized one-dimensional and two-dimensional (2D) radial distribution functions are combined by linear superposition to approximate experimental radial distribution functions. Using these radial distribution functions, an order parameter is developed and an improved definition of pore spacing is constructed. This method confirms that the oxide initially forms with a highly frustrated porous structure and reorganizes toward greater 2D order as the oxide grows into the film.

  6. Electrochemical Water Oxidation by a Catalyst-Modified Metal-Organic Framework Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shaoyang; Pineda-Galvan, Yuliana; Maza, William A.; Epley, Charity C.; Zhu, Jie; Kessinger, Matthew C.; Pushkar, Yulia; Morris, Amanda J. (VP); (Purdue)

    2016-12-15

    Water oxidation, a key component in artificial photosynthesis, requires high overpotentials and exhibits slow reaction kinetics that necessitates the use of stable and efficient heterogeneous water-oxidation catalysts (WOCs). Here, we report the synthesis of UiO-67 metal–organic framework (MOF) thin films doped with [Ru(tpy)(dcbpy)OH2]2+ (tpy=2,2':6',2''-terpyridine, dcbpy=5,5'-dicarboxy-2,2'-bipyridine) on conducting surfaces and their propensity for electrochemical water oxidation. The electrocatalyst oxidized water with a turnover frequency (TOF) of (0.2±0.1) s-1 at 1.71 V versus the normal hydrogen electrode (NHE) in buffered solution (pH~7) and exhibited structural and electrochemical stability. The electroactive sites were distributed throughout the MOF thin film on the basis of scan-ratedependent voltammetry studies. This work demonstrates a promising way to immobilize large concentrations of electroactive WOCs into a highly robust MOF scaffold and paves the way for future photoelectrochemical water-splitting systems.

  7. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, F.L. [Departamento de Electronica y Tecnologia de Computadoras, Universidad Politecnica de Cartagena, Campus Universitario Muralla del Mar, E-30202 Cartagena (Spain)]. E-mail: Felix.Martinez@upct.es; Toledano, M. [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28025 Madrid (Spain); San Andres, E. [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28025 Madrid (Spain); Martil, I. [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28025 Madrid (Spain); Gonzalez-Diaz, G. [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28025 Madrid (Spain); Bohne, W. [Hahn-Meitner-Institut Berlin, Abteilung SF-4, D-14109 Berlin (Germany); Roehrich, J. [Hahn-Meitner-Institut Berlin, Abteilung SF-4, D-14109 Berlin (Germany); Strub, E. [Hahn-Meitner-Institut Berlin, Abteilung SF-4, D-14109 Berlin (Germany)

    2006-10-25

    The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma at pressures between 0.8 and 1.6 mbar and during deposition times between 0.5 and 3.0 h. Hydrogen was found to be the main impurity and its concentration increased with deposition pressure. The composition was always slightly oxygen-rich, which is attributed to the oxygen plasma. Additionally, an interfacial silicon oxide thin layer was detected and taken into account. The thickness of the hafnium oxide film was found to increase linearly with deposition time and to decrease exponentially with deposition pressure, whereas the thickness of the silicon oxide interfacial layer has a minimum as a function of pressure at around 1.2 mbar and increases slightly as a function of time. The measurements confirmed that this interfacial layer is formed mainly during the early stages of the deposition process.

  8. Thermal treatment of solution-processed nano-sized thin films of molybdenum oxide

    Science.gov (United States)

    Ganchev, M.; Sendova-Vassileva, M.; Popkirov, G.; Vitanov, P.

    2016-10-01

    A solution based deposition method to form nano-sized thin films of molybdenum oxide suitable for photovoltaic device applications is presented. The samples were deposited by spin-coating from molybdenum metal organic precursor solution on soda lime glass substrates. The influence of the process parameters such as spinning regime and concentration of the precursor solutions on the thickness and morphology of the films were investigated. The thermal decomposition of the molybdenum precursor and oxide formation were investigated by differential scanning calorimetry and characteristic patterns showed transitions up to 300oC followed by a zone of stability. Optical spectroscopy measurements in the wavelength range from 300 to 1800 nm presented an increase in transparency when temperature of annealing was raised up to 400oC. Raman scattering analysis revealed the presence of mixed molybdenum oxides. Measurements of the electrical conductivity were performed by the 4-point method.

  9. Characterization of the porosity of thin zirconium oxide coatings prepared at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ugas-Carrion, R. [Technische Universitaet Darmstadt, Department of Materials Science, Darmstadt (Germany); Sittner, F. [Technische Universitaet Darmstadt, Department of Materials Science, Darmstadt (Germany)], E-mail: sittner@ca.tu-darmstadt.de; Ochs, C.J.; Flege, S.; Ensinger, W. [Technische Universitaet Darmstadt, Department of Materials Science, Darmstadt (Germany)

    2009-01-30

    In this work we investigated the possibilities to reduce the porosity of thin protective zirconium oxide films deposited with the sol-gel technique at low temperatures. Electrochemical investigations showed that the concentration of the stabilizing agent acetylacetone is a crucial parameter for the protection performance of the zirconium oxide films and that it is possible to run the deposition process at much lower temperatures with the optimum stabilizer concentration. This allows the application of the process to sensitive substrates that cannot be treated at high temperatures and reduces energy costs as well. Characterization of the film structure with secondary ion mass spectrometry revealed that the stabilizing agent is responsible for the formation of a mixed oxide layer at the interface of substrate and coating. The thickness of this layer can be tuned with the concentration of the stabilizing agent.

  10. Influence of Thermal Annealing on Structural and Electrical Properties of Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    A. Mallikarjuna Reddy

    2011-01-01

    Full Text Available Nickel oxide (NiO is a potential p-type transparent conducting oxide material with suitable electrical properties. Nickel oxide thin films were deposited by dc reactive magnetron sputtering technique on unheated glass substrates, and subsequently annealed at 773 K in two different annealing processes. X-ray diffractometer studies revealed that the films exhibited (200 preferred orientation. Scanning electron microscopy and energy dispersive spectroscopy were used to study the effect of annealing temperature on surface morphology and composition of the films. The uniform grains were distributed throughout the substrate after annealed at 773 K. Electrical properties were studied by Hall effect measurements. The low electrical resistivity of 36.9 Ω cm was observed after annealing.

  11. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films.

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-05

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  12. Controlled deposition of silver nanoparticles in mesoporous thin films: towards new metallic-oxide nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Fuertes, Maria Cecilia; Marchena, Martin [Comision Nacional de Energia Atomica (CNEA), San Martin, BA (Argentina). Centro Atomico Consituyentes. Gerencia de Quimica; Wolosiuk, Alelandro; Soler-Illia, Galo Juan de Avila Arturo [Universidad de Buenos Aires (UBA) (Argentina). Facultad de Ciencias Exactas y Naturales. Dept. de Quimica Inorganica, Analitica y Quimica Fisica

    2009-07-01

    Metal-oxide nano composites made up of Ag nanoparticle (NP) assemblies embedded within meso porous oxide thin films were produced by mild reduction of Ag adsorbed onto the pore surface. The nano composites were characterized by small angle x-ray scattering (2D SAXS, DO3A SAXS2) and X-ray reflectometry (XRR, D10A XRD2). A quantitative method based in XRR was developed in order to assess pore filling. Inclusion of Ag NP assemblies in meso porous SiO{sub 2} or TiO{sub 2} requires different processing conditions. The difference of reactivity of both oxide matrices towards Ag reduction is exploited to selectively synthesize NPs in a a pre-determined layer of a multilayered meso porous stack. This leads to highly controlled 1D ordered multilayers with precise spatial location of nano metric objects. (author)

  13. Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

    Institute of Scientific and Technical Information of China (English)

    HU Shi-Gang; CAO Yan-Rong; HAO Yue; MA Xiao-Hua; CHEN Chi; WU Xiao-Feng; ZHOU Qing-Jun

    2008-01-01

    Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown.For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.

  14. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    Science.gov (United States)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-08-01

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100-200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  15. Ethanol-assisted graphene oxide-based thin film formation at pentane-water interface.

    Science.gov (United States)

    Chen, Fuming; Liu, Shaobin; Shen, Jianmin; Wei, Li; Liu, Andong; Chan-Park, Mary B; Chen, Yuan

    2011-08-02

    Graphene oxide (GO) can be viewed as an amphiphilic soft material, which form thin films at organic solvent-water interfaces. However, organic solvent evaporation provides little driving force, which results in slow GO transfer in aqueous phase, thus dawdling GO film formation processes for various potential applications. We present an ethanol-assisted self-assembly method for the quick formation of GO or GO-based composite thin films with tunable composition, transmittance, and surface resistivity at pentane-water interface. The thickness of pure GO and reduced GO (rGO) films ranging from ~1 nm to more than 10 nm can be controlled by the concentration of GO in bulk solution. The transmittance of rGO films can be tuned from 72% to 97% at 550 nm while the surface resistivity changes from 8.3 to 464.6 kΩ sq(-1). Ethanol is essential for achieving quick formation of GO thin films. When ethanol is injected into GO aqueous dispersion, it serves as a nonsolvent, compromising the stability of GO and providing driving force to allow GO sheets aggregate at the water-pentane interface. On the other hand, neither the evaporation of pentane nor the mixing between ethanol and water provides sufficient driving forces to allow noteworthy amount of GO sheets to migrate from the bulk aqueous phase to the interface. This method can also be extended to prepare GO-based composites thin films with tunable composition, such as GO/single walled carbon nanotube (SWCNT) composite thin films investigated in this work. Reduced GO/SWCNT composite films show much lower surface resistivity compared to pure rGO thin films. This ethanol-assisted self-assembly method opens opportunities to design and fabricate new functional GO-based hybrid materials for various potential applications.

  16. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Hua [Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11790 (United States); Chou, Kang Wei [Henkel Ibérica S. A. Edificio Eureka, 08193, Campus UAB, Barcelona (Spain); Petrash, Stanislas [Henkel Corporation, 10 Finderne Avenue, Bridgewater, New Jersey 08807 (United States); Williams, Garth; Thieme, Juergen; Li, Li; Chen-Wiegart, Yu-chen Karen, E-mail: ycchen@bnl.gov [National Synchrotron Light Source II, Brookhaven National Laboratory, 743 Brookhaven Avenue, Upton, New York 11973-5000 (United States); Nykypanchuk, Dmytro [Center for Functional Nanomaterials, Brookhaven National Laboratory, 735 Brookhaven Avenue, Upton, New York 11973-5000 (United States); Muto, Atsushi [Hitachi High Technologies America, 22610 Gateway Center Drive, Clarksburg, Maryland 20871 (United States)

    2016-08-29

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  17. Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; YU Jun; WANG Jia-Qi

    2008-01-01

    Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique.A three-layer model based on transmission line theory and the gentic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance.The results show that the average thermal conductivity of 3301000nm aluminium oxide thin films is 3.3Wm-1 K-1 at room temperature.No significant thickness dependence is found.The uncertainty of the measurement is less than 10%.

  18. Control of preferred (222) crystalline orientation of sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh (Viet Nam); Hoang, Van Dung; Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh (Viet Nam); Ta, Thi Kieu Hanh [Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh (Viet Nam); Maenosono, Shinya [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh (Viet Nam)

    2014-11-03

    We report a two-step growth process for the fabrication of (222)-plane textured indium tin oxide (ITO) films. A thin ITO seed layer was grown in mixed Argon + Oxygen gases, followed by a thick ITO deposited in Argon gas. X-Ray diffraction shows that the sputtered ITO films exhibit strongly preferred (222) crystalline orientation. The (222)-plane textured ITO films have high transmittance above 80% in the visible range and carrier concentration, mobility and resistivity in the range of 10{sup 21} cm{sup −3}, 40 cm{sup 2}/Vs and 10{sup −4} Ω·cm, respectively. The surface roughness of our (222) textured ITO films is 1.4 nm, which is one of the smallest value obtained from sputtered ITO thin films. - Highlights: • Control of preferred (222) crystalline orientation of indium tin oxide (ITO) films • A thin oxygen rich seed layer activates (222) orientation growth of overhead ITO films. • The surface roughness of (222)-plane textured ITO films is about 1.4 nm. • Carrier concentration and resistivity are about 10{sup 21} cm{sup −3} and 10{sup −4} Ω·cm, respectively.

  19. Optoelectronic properties of graphene oxide thin film processed by cost-effective route

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Farzana A. [Experimental Physics Division, Atomic Energy Centre, 4, Kazi Nazrul Islam Avenue, Dhaka 1000 (Bangladesh); Morisaki, Takuya; Otsuki, Joe [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Alam, M. Sahabul, E-mail: alam@univdhaka.edu [Department of Physics, Faculty of Science, University of Dhaka, Dhaka 1000 (Bangladesh)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Advantage of a cost-effective mass production of graphene oxide (GO) with less defects. Black-Right-Pointing-Pointer Thermal reduction of GO at a temperature as low as 170 Degree-Sign C without any reagent. Black-Right-Pointing-Pointer Desired optical and electrical properties in a cost effective path to be applicable as a potential candidate for optoelectronic applications. - Abstract: We present large area graphene oxide (GO) thin films as a potential transparent electrode fabricated by using simple route. Atomic force microscopy (AFM) topographies showed a uniform film texture that is wrinkle-free with roughness as low as {approx}1.4 nm. Desired optical and electrical properties were achieved by thermal reduction at a temperature as low as 170 Degree-Sign C without any reagent; which is an important factor in practical application field. Microstructural perfection is quite evident from the abrupt descent around specific energy of photons in the transmittance spectrum. In particular, we explore that device-quality GO thin films can be obtained via a low-cost scalable technique in comparison with other previous works. Urbach energy and different electrical parameters are addressed. The nature and extent of the band gap are analyzed. The findings are very significant in view of an optimized use of GO thin films in electrical and photoelectric applications.

  20. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    Science.gov (United States)

    Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

    2017-05-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

  1. Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Axente, E.; Socol, G.; Luculescu, C.R.; Craciun, V. [National Institute for Lasers, Plasma and Radiation Physics, Laser-Surface-Plasma Interactions Laboratory, Lasers Department, Magurele-Bucharest (Romania); Beldjilali, S.A. [LP3, CNRS-Aix-Marseille University, Marseille (France); LPPMCA, USTOMB-Universite des Sciences et de la Technologie d' Oran, BP 1505, Oran (Algeria); Mercadier, L.; Hermann, J. [LP3, CNRS-Aix-Marseille University, Marseille (France); Trinca, L.M.; Galca, A.C. [National Institute of Materials Physics, Laboratory of Multifunctional Materials and Structures, Magurele-Bucharest (Romania); Pantelica, D.; Ionescu, P. [National Institute of Physics and Nuclear Engineering Horia Hulubei, Magurele-Bucharest (Romania); Becherescu, N. [Apel Laser, Bucharest (Romania)

    2014-10-15

    The use of amorphous and transparent oxides is a key for the development of new thin film transistors and displays. Recently, indium zinc oxide (IZO) was shown to exhibit high transparency in the visible range, low resistivity, and high mobility. Since the properties and the cost of these films depend on the In/(In + Zn) values, the measurement of this ratio is paramount for future developments and applications. We report on accurate analysis of the elemental composition of IZO thin films synthesized using a Combinatorial Pulsed Laser Deposition technique. The monitoring of the thin films elemental composition by Laser-Induced Breakdown Spectroscopy was chosen in view of further in situ and real-time technological developments and process control during IZO fabrication. Our analytical approach is based on plasma modeling, the recorded spectra being then compared to the spectral radiance computed for plasmas in local thermal equilibrium. The cation fractions measured were compared to values obtained by complementary measurements using energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. Spectroscopic ellipsometry assisted the scientific discussion. A good agreement between methods was found, independently of the relative fraction of indium and zinc that varied from about 65 to 90 and 35 to 10 at%, respectively, and the measurement uncertainties associated to each analytical method. (orig.)

  2. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  3. Investigation of the preparation and properties of organic dye/metal oxide composite thin films

    Science.gov (United States)

    Jaeger, Steffen; Neumann, F.; Klages, Claus-Peter

    1994-11-01

    In this study the growth, structure and physical, particularly optical properties of composite thin films (copper-phthalocyanine-SiO2) with different dye contents are investigated by means of optical spectroscopy (UV-IR), electron probe micro analysis, atomic force microscopy and scanning electron microscopy measurements and compared with the properties of pure dye thin films of different thicknesses and dye/metal oxide multilayer structures, respectively. The composite thin films show spectral shifts and changes in the extension and the intensity of the typical absorption bands in the visible spectral range depending on the dye concentration in the composites. This behavior is accompanied by pronounced color changes, e.g. from blue-green to green in the CuPc-SiO2 system. The results show, that the CuPc- SiO2 composite properties are mainly influenced by the size and kind of dye aggregates in the films (monomer, dimer) and not by interaction of dye molecules with the metal oxide matrix.

  4. Oxidation of atomically thin MoS2 on SiO2

    Science.gov (United States)

    Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

    2013-03-01

    Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

  5. Synthesis of Au microwires by selective oxidation of Au–W thin-film composition spreads

    Directory of Open Access Journals (Sweden)

    Sven Hamann, Hayo Brunken, Steffen Salomon, Robert Meyer, Alan Savan and Alfred Ludwig

    2013-01-01

    Full Text Available We report on the stress-induced growth of Au microwires out of a surrounding Au–W matrix by selective oxidation, in view of a possible application as 'micro-Velcro'. The Au wires are extruded due to the high compressive stress in the tungsten oxide formed by oxidation of elemental W. The samples were fabricated as a thin-film materials library using combinatorial sputter deposition followed by thermal oxidation. Sizes and shapes of the Au microwires were investigated as a function of the W to Au ratio. The coherence length and stress state of the Au microwires were related to their shape and plastic deformation. Depending on the composition of the Au–W precursor, the oxidized samples showed regions with differently shaped Au microwires. The Au48W52 composition yielded wires with the maximum length to diameter ratio due to the high compressive stress in the tungsten oxide matrix. The values of wire length (35 μm and diameter (2 μm achieved at the Au48W52 composition are suitable for micro-Velcro applications.

  6. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    Energy Technology Data Exchange (ETDEWEB)

    Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

    2013-01-15

    Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

  7. Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

    Energy Technology Data Exchange (ETDEWEB)

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi [Advanced Film Device, Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi, Tochigi 328-0114 (Japan); Yamauchi, Jun [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Emeritus Professor of Kyoto University, Oiwake-cho, Kitashirakawa, Kyoto 606-8502 (Japan)

    2014-04-28

    In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

  8. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    Science.gov (United States)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-06-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  9. Fabrication of thin electrolyte film by electrophoretic deposition for intermediate-temperature solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Lankin, M.; Karan, K. [Royal Military Coll. of Canada, Kingston, ON (Canada). Fuel Cell Research Centre

    2005-07-01

    Stainless steel interconnects are suitable for use in intermediate temperature solid oxide fuel cells (ITSOFCs) operating at 500-700 degrees C. This can greatly reduce the cost of materials. However, lower temperatures lead to higher ohmic losses in the electrolyte. These losses can be reduced by making SOFCs with thin electrolyte layers. Conventional methods for thin-film fabrication such as electro-vapour deposition or plasma spraying are expensive techniques. An alternative method is electrophoretic deposition (EPD), which is less costly and which very rapidly produces uniform electrolyte layers in the order of 10-40 {mu}m. In this study, EPD was used to make thin gadolina-doped ceria (GDC) electrolytes on copper-GDC anodes for use in ITSOFCs fuelled by biofuels. Experimental studies thus far have shown how to optimize the parameters influencing the EPD process. Scanning electron microscope analysis has shown that electrolyte layers of 10 {mu}m thickness, uniform thickness and moderate density are produced by EPD. This paper described the development of a single-cell SOFC based on the EPD process, and discussed the progress to date, on characterizing thin film electrolytes.

  10. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    Science.gov (United States)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  11. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

    2015-09-15

    Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

  12. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  13. Effects of Hf incorporation on indium zinc oxide thin-film transistors using solution process

    Science.gov (United States)

    Li, Xifeng; Xin, Enlong; Zhang, Jianhua

    2015-01-01

    Thin-film transistors (TFTs) were fabricated by employing amorphous hafnium indium zinc oxide (HIZO) thin films as the active channel layer by the solution process. Thermogravimetry-differential thermal analysis, transmittance measurements, atomic force microscopy, scanning electron microscopy, x-ray diffraction, and Fourier transform infrared analysis were used to study the formation, structure, and optical properties of the HIZO films. The results showed that the addition of Hf to the IZO system resulted in suppression of carrier generation. The HIZO TFTs exhibited lower off-currents and higher onoff current ratios than IZO TFTs without Hf doping. HIZO TFTs with a Hf doping content of 5 at. % obtained a threshold voltage of 3.7 V, a mobility of 0.27 cm2 V-1 s-1, a subthreshold swing of 1.2 V/dec, and an on-off current ratio of 106.

  14. UV-assisted rapid thermal annealing for solution-processed zinc oxide thin-film transistors

    Science.gov (United States)

    Hwang, Jaeeun; Park, Jaehoon; Kim, Hongdoo

    2014-09-01

    An ultraviolet (UV)-assisted thermal annealing (TA) method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs). Conventional thermal treatment of zinc hydroxide solution, which was carried out at 150 °C for 60 min in air, produced ZnO materials. Electrical properties of the TFTs employing thermally-annealed ZnO films were reproduced in the transistors fabricated using a simultaneous thermal treatment combined with UV irradiation at 150 °C for 3 min in air. These results demonstrate that the UV-assisted TA method can expedite the decomposition of precursor materials, contributing to rapid crystallization into thin films.

  15. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.

    2012-02-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  16. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT.[Figure not available: see fulltext.].

  17. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    Science.gov (United States)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  18. Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si (111) Substrate

    Institute of Scientific and Technical Information of China (English)

    XUE Xian-Ying; WANG Yu-Zhui; JIA Quan-Jie; WANG Yong; CHEN Yu; JIANG Xiao-Ming; ZHU Yan-Yan; JIANG Zui-Min

    2007-01-01

    Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown tinder optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ε|| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.

  19. Sol-gel fabrication of lithium doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oral, A.Y.; Bahsi, Z.B. [Dept. of Materials Science and Engineering, Gebze Inst. of Tech., Kocaeli (Turkey); Aslan, M.H.; Basaran, E. [Dept. of Physics, Gebze Inst. of Tech., Kocaeli (Turkey)

    2004-07-01

    Li doped zinc oxide thin films were deposited on glass substrates by a sol-gel technique. Acetates of zinc and lithium were used as metal sources. A homogeneous and stable solution was prepared by dissolving acetates in the solution of 2-propanol and ethanolamine. ZnO:Li thin films were obtained after preheating the spin coated films at 250 C for 1 minute after each coating. A post annealing between 450-600 C was applied after the deposition of the last layers. XRD analysis revealed ZnO with zincite structure (Card no: 36-1451) in all films. The thickness of the films was measured as 75 nm per layer. The optical band gap of the films increased as doping concentration of Li increased and decreased as the post-annealing temperature increased. (orig.)

  20. Study of optical characteristics of tin oxide thin film prepared by sol–gel method

    Indian Academy of Sciences (India)

    Sumanta Kumar Tripathy; Bhabani Prasad Hota; P V Rajeswari

    2013-12-01

    In this paper, we present details of preparation of tin oxide (SnO2) thin film by sol–gel process. The film was synthesized on a glass (Corning 7059) plate by dip coating method. Here, we used tin (II) chloride as precursor and methanol as solvent. Optical characteristics and physical properties like refractive index, absorption coefficient and thickness of thin film were calculated from the study of transmission spectrum (wavelength vs transmission curve) data given by UV/VIS Spectrophotometer. Effect of number of coatings on transmittance and refractive index was also examined. It was observed that refractive index decreases with the number of coating and transmission value was more than 80% at wavelength greater than 450 nm in all cases. Structural analysis was studied by XRD measurement by using diffractometer which confirms tetragonal rutile structure of SnO2. Surface morphology was analysed from SEM micrograph and change in morphology on number of coat was discussed.

  1. Effect of thickness on nonlinear absorption properties of graphite oxide thin films

    Science.gov (United States)

    Sreeja, V. G.; Cheruvalathu, Ajina; Reshmi, R.; Anila, E. I.; Thomas, Sheenu; Jayaraj, M. K.

    2016-10-01

    We report the thickness dependent structural, linear and nonlinear optical properties of graphite oxide (GO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned by the film thickness in GO. The nonlinear absorption studies by open aperture z scan technique exhibited a saturable absorption. The nonlinear absorption coefficient and saturation intensity varies with film thickness which is attributed to increased localized defect states in the energy band gap. Our results emphasize relatively large thickness dependent optical nonlinearity of GO thin films and its potential for optical pulse generation, exploring the way to GO based nonlinear applications in Q switched mode locking laser systems. All the coated GO films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

  2. Colored and transparent oxide thin films prepared by magnetron sputtering: the glass blower approach.

    Science.gov (United States)

    Gil-Rostra, Jorge; Chaboy, Jesús; Yubero, Francisco; Vilajoana, Antoni; González-Elipe, Agustín R

    2013-03-01

    This work describes the reactive magnetron sputtering processing at room temperature of several mixed oxide MxSiyOz thin films (M: Fe, Ni, Co, Mo, W, Cu) intended for optical, coloring, and aesthetic applications. Specific colors can be selected by adjusting the plasma gas composition and the Si-M ratio in the magnetron target. The microstructure and chemistry of the films are characterized by a large variety of techniques including X-ray photoemission spectroscopy, X-ray absorption spectroscopy (XAS), and infrared spectroscopy, while their optical properties are characterized by UV-vis transmission and reflection analysis. Particularly, XAS analysis of the M cations in the amorphous thin films has provided valuable information about their chemical state and local structure. It is concluded that the M cations are randomly distributed within the SiO2 matrix and that both the M concentration and its chemical state are the key parameters to control the final color of the films.

  3. The Electrical Characteristics of Aluminium Doped Zinc Oxide Thin Film for Humidity Sensor Applications

    Directory of Open Access Journals (Sweden)

    N. D. Md Sin

    2011-01-01

    Full Text Available The electrical characteristics of aluminum (Al doped zinc oxide (ZnO thin film for high sensitivity humidity sensors are presented. The effects of Al doping concentration at 0∼0.6 at % on the Al doped ZnO thin film properties were investigated using current-voltage measurement. The optical and structural properties were characterized using photoluminescence (PL, scanning emission microscope (SEM, and X-ray diffraction (XRD. Parameter 0.6 at % Aluminum doped show high sensitivity and suitable for humidity sensor. PL show an emissions band with two peaks centered at about 380 nm (ultra-violet (UV and 600 nm (green in a room temperature. The length of the nanorods increases as the doping concentration increases. XRD results show the intensity of the (002 peak decreased with the increasing of doping concentration.

  4. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    Science.gov (United States)

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

  5. Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

    NARCIS (Netherlands)

    Zenkevich, A.; Lebedinskii, Yu.; Spiga, S.; Wiemer, C.; Scarel, G.; Fanciulli, M.

    2007-01-01

    The correlation between chemical composition, layered structure evolution, and electrical properties of ultra-thin (2-5 nm) Lu oxide layers grown on chemically oxidized Si(100) and exposed to different thermal treatments was monitored by x-ray photoelectron spectroscopy, x-ray reflectivity and C-V,

  6. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem cells

  7. Study on Optical Properties of Tin Oxide Thin Film at Different Annealing Temperature

    Directory of Open Access Journals (Sweden)

    Saturi Baco

    2012-07-01

    Full Text Available Tin Oxide (SnO2 thin film is one of the important transparent conducting oxides (TCOs and applied in various fields such as in solar cells, optoelectronic devices, heat mirror, gas sensors, etc due to its electrical and optical transparency in visible light spectrum. In this paper, we presented the optical properties of tin oxide thin film at four different annealing temperatures (373 K, 437 K, 573 K and 673 K prepared by radio frequency sputtering technique. The optical characteristic of these films was investigated using the UV-VIS 3101-PC Spectrophotometer. From this study, all samples exhibit high transmittance more than 70% in the visible light spectrum. Sample annealed at 473 K shows the maximum transmittance which is 87%. Refractive index, n were in the range of 2.33 – 2.80 at  = 550 nm and enhanced with the annealing temperature. However the extinction of coefficient, k was found to be very small. The optical band-edge absorption coefficients were found in the range of 104 – 105cm-1. The energy gap value was decreased with increasing annealing temperature and the type of photon transition was allowed direct transition.

  8. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  9. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  10. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    Science.gov (United States)

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

    2017-01-01

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications. PMID:28435867

  11. Optical, structural and electrochromic properties of sputter- deposited W-Mo oxide thin films

    Science.gov (United States)

    Gesheva, K.; Arvizu, M. A.; Bodurov, G.; Ivanova, T.; Niklasson, G. A.; Iliev, M.; Vlakhov, T.; Terzijska, P.; Popkirov, G.; Abrashev, M.; Boyadjiev, S.; Jágerszki, G.; Szilágyi, I. M.; Marinov, Y.

    2016-10-01

    Thin metal oxide films were investigated by a series of characterization techniques including impedance spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, and Atomic Force Microscopy. Thin film deposition by reactive DC magnetron sputtering was performed at the Ångström Laboratory. W and Mo targets (5 cm diameter) and various oxygen gas flows were employed to prepare samples with different properties, whereas the gas pressure was kept constant at about 30 mTorr. The substrates were 5×5 cm2 plates of unheated glass pre-coated with ITO having a resistance of 40 ohm/sq. Film thicknesses were around 300 nm as determined by surface profilometry. Newly acquired equipment was used to study optical spectra, optoelectronic properties, and film structure. Films of WO3 and of mixed W- Mo oxide with three compositions showed coloring and bleaching under the application of a small voltage. Cyclic voltammograms were recorded with a scan rate of 5 mV s-1. Ellipsometric data for the optical constants show dependence on the amount of MoOx in the chemical composition. Single MoOx film, and the mixed one with only 8% MoOx have the highest value of refractive index, and similar dispersion in the visible spectral range. Raman spectra displayed strong lines at wavenumbers between 780 cm-1 and 950 cm-1 related to stretching vibrations of WO3, and MoO3. AFM gave evidence for domains of different composition in mixed W-Mo oxide films.

  12. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    Science.gov (United States)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  13. Tungsten oxide thin films obtained by anodisation in low electrolyte concentration

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Nadja B.D. da [Centro de Ciências Químicas, Farmacêuticas e de Alimentos, Universidade Federal de Pelotas, Campus Capão do Leão, s/n, Pelotas, RS (Brazil); Pazinato, Julia C.O. [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Gündel, André; Moreira, Eduardo C. [Universidade Federal do Pampa, Travessa 45, 1650 Bagé, RS (Brazil); Garcia, Irene T.S., E-mail: irene.garcia@ufrgs.br [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

    2015-03-02

    Tungsten oxide nanostructured films were grown on tungsten substrates by anodisation under a fixed voltage and with sodium fluoride as electrolyte. The effect of the anion chloride and the influence of the modifying agent disodium hydrogen phosphate in the tungsten oxide films were also investigated. The structural characterisation of the films was performed by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The band gap was determined through diffuse reflectance spectroscopy. The thin films were photoluminescent and emitted in the range of 300 to 630 nm when irradiated at 266 nm. The synthesised films efficiently degraded of methyl orange dye in the presence of hydrogen peroxide and 250 nm radiation. The modifying agent was responsible for the improvement of the photocatalytic activity. Films with similar photocatalytic performance were obtained when the system sodium fluoride and disodium hydrogen phosphate were replaced by sodium chloride. The porous structure and low band gap values were responsible for the photocatalytic behaviour. - Highlights: • Tungsten oxide thin films were obtained by anodisation of tungsten in aqueous media. • The performance of the NaCl, NaF and NaF/Na{sub 2}HPO{sub 4} as electrolytes was investigated. • The relation between structure and optical behaviour has been discussed. • Films obtained with NaCl and NaF/Na{sub 2}HPO{sub 4} present similar photocatalytic activity.

  14. Parameters affecting the accuracy of oxide thickness prediction in thin metal-oxide-semiconductor structures

    Science.gov (United States)

    Mohaidat, J. M.; Ahmad-Bitar, Riyad N.

    2004-01-01

    On the basis of the solution of the time dependent Schrödinger equation within the framework of the effective mass theory, a complete quantum mechanical electron tunneling through a biased square potential model with abrupt interfaces was deduced. Barriers of 3 eV height and widths up to 140 Å were investigated. Current density-voltage ( J- V) curves were computed for Al/SiO 2/ n+Si structure. The computed J- V curves exhibited oscillations at applied voltages above (Fowler-Nordheim tunneling) and below (direct tunneling) 3 V. For oxide thickness estimation, the position of the oscillation extrema from this quantum mechanical model were fitted to a wave interference formula and showed excellent agreement for oxide layer widths less than 50 Å. However, a systematic deviation appeared for layers larger than 50 Å. We show that the electron energy distribution at the injection layer and the electron effective mass on layers other than the oxide layer are important parameters for accurate oxide thickness estimation.

  15. Femtosecond laser surface structuring and oxidation of chromium thin coatings: Black chromium

    Energy Technology Data Exchange (ETDEWEB)

    Kotsedi, L., E-mail: Kotsedi@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Mthunzi, P. [National Laser Centre, Council for Scientific and Industrial Research, 0001 Pretoria (South Africa); Muller, T.F.G. [University of the Western Cape, Physics Department, Bellville, 7535 Cape Town (South Africa); Eaton, S.M. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Julies, B. [University of the Western Cape, Physics Department, Bellville, 7535 Cape Town (South Africa); Manikandan, E. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Ramponi, R. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Maaza, M. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa)

    2014-12-01

    Highlights: • Oxidation of the chromium thin film to chromium oxide by femtosecond laser with a fundamental wavelength of 1064 nm. • Solar absorber from chromium oxide that low percentage reflectance. • Femtosecond laser oxidation, with a de-focused laser. • Chromium oxide formation by femtosecond laser in normal ambient. - Abstract: In view of their potential applications as selective solar absorbers, chromium coatings on float glass substrates were nano/micro structured by femtosecond laser in air. Raman and X-rays diffraction investigations confirmed the formation of an ultra-porous α-Cr{sub 2}O{sub 3} layer at the surface; higher is the input laser power, enhanced is the crystallinity of the α-Cr{sub 2}O{sub 3} layer. The α-Cr{sub 2}O{sub 3} layer with the Cr underneath it in addition to the photo-induced porosity acted as a classical ceramic–metal nano-composite making the reflectance to decrease significantly within the spectral range of 190–1100 nm. The average reflectance decreased from 70 to 2%.

  16. Structural changes in graphene oxide thin film by electron-beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Chetna, E-mail: tchetna91@gmail.com [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Lakshmi, G.B.V.S.; Kumar, Sunil; Tripathi, Ambuj [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India)

    2016-07-15

    Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 10{sup 11} to 2 × 10{sup 13} e{sup −}/cm{sup 2}. Our studies using X-ray diffraction, Raman microscopy and UV–Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

  17. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Science.gov (United States)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn3O4, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20-30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 - 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9-10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  18. Structural changes in graphene oxide thin film by electron-beam irradiation

    Science.gov (United States)

    Tyagi, Chetna; Lakshmi, G. B. V. S.; Kumar, Sunil; Tripathi, Ambuj; Avasthi, D. K.

    2016-07-01

    Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 1011 to 2 × 1013 e-/cm2. Our studies using X-ray diffraction, Raman microscopy and UV-Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

  19. Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki; Shimomura, Kouji; Noro, Naotaka; Hasegawa, Toshio; Akasaka, Yasushi [SPE Core Technology Development Department, Tokyo Electron Yamanashi Ltd., 50 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan); Miyashita, Kohei [Leading Edge Process Development Center, Tokyo Electron Ltd., 650 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan)

    2016-01-15

    This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.

  20. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

    Science.gov (United States)

    Zhuang, Jiaqing; Sun, Qi-Jun; Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Peng, Haiyan; Venkatesh, Shishir; Wu, Wei; Li, Robert K Y; Roy, V A L

    2016-11-16

    Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln2O3/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

  1. Electrochromics for smart windows: Oxide-based thin films and devices

    Energy Technology Data Exchange (ETDEWEB)

    Granqvist, Claes G.

    2014-08-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  2. Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

    Science.gov (United States)

    Jeong, Yesul; Pearson, Christopher; Lee, Yong Uk; Winchester, Lee; Hwang, Jaeeun; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C.

    2014-11-01

    We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm2/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 104 and a threshold voltage of -3.5 V. These values were found to depend reversibly on measurement conditions.

  3. UV optical properties of thin film oxide layers deposited by different processes.

    Science.gov (United States)

    Pellicori, Samuel F; Martinez, Carol L

    2011-10-01

    UV optical properties of thin film layers of compound and mixed oxide materials deposited by different processes are presented. Japan Electron Optics Laboratory plasma ion assisted deposition (JEOL PIAD), electron beam with and without IAD, and pulsed DC magnetron sputtering were used. Comparisons are made with published deposition process data. Refractive indices and absorption values to as short as 145 nm were measured by spectroscopic ellipsometry (SE). Electronic interband defect states are detected that are deposition-process dependent. SE might be effective in identifying UV optical film quality, especially in defining processes and material composition beneficial for high-energy excimer laser applications and environments requiring stable optical properties.

  4. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    KAUST Repository

    Hanna, A. N.

    2013-11-26

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  5. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    Science.gov (United States)

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  6. Synthesis and characterization of nickel oxide (NiO) thin films

    Science.gov (United States)

    Kate, R. S.; Khalate, S. A.; Deokate, R. J.

    2017-05-01

    Nickel Oxide (NiO) thin films were deposited by simple spray pyrolysis technique using nickel nitrate solution onto preheated glass substrate at substrate temperature 320 °C and 380 °C. Influence of substrate temperature on structural, morphological and optical properties were studied using X-ray diffraction, scanning electron microscopy and optical absorption. XRD results reveal that films are polycrystalline with single phase cubic structure and crystallinity of the film increases as the temperature increases. Surface morphological study shows spherical granular like shape at high deposition temperature. Optical band gap increases from 2.85 to 3.01 eV as the temperature increases.

  7. Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

    OpenAIRE

    Arpana Agrawal; Tanveer Ahmad Dar; Pratima Sen

    2013-01-01

    The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight) thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies...

  8. Light irradiation tuning of surface wettability, optical, and electric properties of graphene oxide thin films

    Science.gov (United States)

    Furio, A.; Landi, G.; Altavilla, C.; Sofia, D.; Iannace, S.; Sorrentino, A.; Neitzert, H. C.

    2017-02-01

    In this work the preparation of flexible polymeric films with controlled electrical conductivity, light transmission and surface wettability is reported. A drop casted graphene oxide thin film is photo-reduced at different levels by UV light or laser irradiation. Optical microscopy, IR spectroscopy, electrical characterization, Raman spectroscopy and static water contact angle measurements are used in order to characterize the effects of the various reduction methods. Correlations between the optical, electrical and structural properties are reported and compared to previous literature results. These correlations provide a useful tool for independently tuning the properties of these films for specific applications.

  9. Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides

    Science.gov (United States)

    Kapetanakis, E.; Normand, P.; Holliger, P.

    2008-03-01

    The electrical characteristics of low-energy (3keV) Ge-implanted and, subsequently, thermal annealed SiO2 layers are investigated through capacitance-voltage (C-V ) and conductance-voltage (G-V) measurements of metal-oxide-semiconductor capacitors. Particular emphasis is placed on the properties of such gate oxides for memory applications. Capacitance measurements at flatband voltage before and after the application of constant voltage stress in the accumulation regime indicate that the charge trapping behavior of the devices undergoes a major change after annealing at temperatures higher than 910°C. The latter change is identified as a relocation of Ge atoms mainly toward the upper portion of the oxide with a significant fraction of them leaving the oxide; a finding in harmony with secondary ion mass spectroscopy analysis. The interface trap density (Dit) for the thin (9-12nm) implanted oxides decreases with increasing annealing temperature, approaching at 950°C the Dit levels in the mid-1010eV-1cm-2 range of the nonimplanted samples. At elevated annealing temperatures (>1000°C), the device C-V characteristics are substantially disturbed. In this case, the presence of electrically active Ge atoms at an extended depth in the substrate modifies the intrinsic electrical properties of the n-Si substrate, lending a p-type conductivity character to the device high-frequency C-V curves. Substrate electrical modification is interpreted through a model that takes into account the formation of a SiO2/Ge-rich-Si /n-Si system. The SiO2/Ge-rich-Si interface presents very low Dit levels as revealed by conductance loss characteristics. The present study suggests that a combination of Ge implantation into SiO2 films and thermal annealing may be exploited in damage-free SiGe epitaxial growth technology based on Ge implantation.

  10. Reduction and Oxidation of Copper Oxide Thin Films and Thermal Stability Issues in Copper-Based Metallization.

    Science.gov (United States)

    Li, Jian

    This thesis investigates the oxidation and reduction of Cu-oxides and thermal induced reactions of Cu with metals. The combination of ^{16}O( alpha,alpha)^{16}O oxygen resonance and transmission electron microscopy (TEM) provides an effective method of studying the oxidation and reduction of copper oxide thin films. A discontinuous morphology of grain growth of Cu_2O in found in the CuO matrix during reduction. The migration of the Cu_2O-CuO phase boundary is induced by oxygen diffusion along the moving boundary. Grain growth is the dominant process in the transformation from CuO to Cu_2O; nucleation is the dominant process in the reverse transformation, i.e. from Cu_2O to CuO. The reduction and oxidation of copper oxides are asymmetrical; the latter is significantly faster. The metastable phase Cu _4O_3 was formed by ion milling CuO. Carbon and refractory metals such as Ti or Zr can enhance the reduction rate of CuO. Three topics relating to thermal stability issues in Cu-based metallization were investigated: (1) texturing in electroless copper films on epitaxial copper seed layers; (2) predicting first phase formation in Cu/metal bilayer structures; and (3) encapsulation of Cu fine line structures with TiN. (100)- and (111)-textured copper layers were deposited by electroless plating on copper seed layers grown epitaxially on Si (100) and Si (111) substrates, respectively. (111) -textured copper films are more oxidation-resistant. Rutherford backscattering spectrometry (RBS) and in situ transmission electron microscopy (TEM) were used to determine phase formation in Cu-M (M = Ti, Zr, Mg, Sb, Pd and Pt) bilayer systems. An effective heat of formation rule was employed to predict first phase formation in these systems. A TiN-encapsulated copper structure was made by annealing a Cu-10at%Ti alloy film evaporated on a SiO _2/Si(100) substrate at 550^ circC in an NH_3 ambient. Fast heating rates (70^circC/min.) to 550^circC can effectively suppress the formation of Cu

  11. Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

    Science.gov (United States)

    Maabong, Kelebogile; Machatine, Augusto G.; Hu, Yelin; Braun, Artur; Nambala, Fred J.; Diale, Mmantsae

    2016-01-01

    Hematite (α-Fe2O3) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe2O3 thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe2O3 nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from 57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV-visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

  12. Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Maabong, Kelebogile [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Department of Physics, University of Botswana, Private Bag 002, Gaborone (Botswana); Machatine, Augusto G. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Hu, Yelin [Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Laboratory for Photonics and Interfaces, EPFL, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Braun, Artur [Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Nambala, Fred J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); University of Zambia, Box 32379, Great East Road Campus, Lusaka (Zambia); Diale, Mmantsae, E-mail: mmantsae.diale@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland)

    2016-01-01

    Hematite (α-Fe{sub 2}O{sub 3}) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe{sub 2}O{sub 3} thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe{sub 2}O{sub 3} nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from ~57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV–visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

  13. Oxidation of TaSi2 thin films on polycrystalline Si

    Science.gov (United States)

    Nguyen Tan, T. A.; Guerfi, N.; Veuillen, J. Y.; Derrien, J.

    1990-01-01

    XPS and UPS have been used for studying the oxidation of TaSi2 films formed by annealing, under ultrahigh-vacuum, of Ta deposits (≈70Å) on polycrystalline Si. Oxidation has been carried out at room-temperature and at 700°C with an oxygen pressure of 2×10-5 mbar. Both Ta and Si react with oxygen. At room-temperature, O chemisorbs on the surface giving a mixed phase of Si suboxides and Ta oxides (TaO, TaO2 and Ta2O5). At 700°C, a very thin Ta2O5 layer (<0.1 monolayer) is formed on top of the growing SiO2 layer. In comparison with Si(111), the oxidation kinetics of TaSi2 begins with a higher transitory rate and follows afterwards the same parabolic dependence of the SiO2 thickness as a function of oxidation time. UPS spectra indicate a higher density of interface states, in comparison with that of SiO2 on Si. The XPS valence band testifies that the electronic structure of the underlying TaSi2 is preserved after oxidation. Subsequent heating of the sample leads to the progressive decomposition of SiO2, at T ≳ 750°C, while the upper Ta2O5 layer is not affected. The results are discussed in relation to thermodynamic properties of Si and Ta oxides, and compared with existing results given by macroscopic methods.

  14. X-ray absorption spectroscopy studies of electrochemically deposited thin oxide films.

    Energy Technology Data Exchange (ETDEWEB)

    Balasubramanian, M.

    1998-06-02

    We have utilized ''in situ'' X-ray Absorption Fine Structure Spectroscopy to investigate the structure and composition of thin oxide films of nickel and iron that have been prepared by electrodeposition on a graphite substrate from aqueous solutions. The films are generally disordered. Structural information has been obtained from the analysis of the data. We also present initial findings on the local structure of heavy metal ions, e.g. Sr and Ce, incorporated into the electrodeposited nickel oxide films. Our results are of importance in a number of technological applications, among them, batteries, fuel cells, electrochromic and ferroelectric materials, corrosion protection, as well as environmental speciation and remediation.

  15. Reduction of Resistivity in Cu Thin Films by Partial Oxidation: Microstructural Mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Prater, W

    2003-10-14

    We report the electrical resistance and microstructure of sputter deposited copper thin films grown in an oxygen containing ion-beam sputtering atmosphere. For films thinner than 5 nm, 2-10% oxygen causes a decrease in film resistance, while for thicker films there is a monotonic increase in resistivity. X-ray reflectivity measurements show significantly smoother films for these oxygen flow rates. X-ray diffraction shows that the oxygen doping causes a refinement of the copper grain size and the formation of cuprous oxide. We suggest that the formation of cuprous oxide limits copper grain growth, which causes smoother interfaces, and thus reduces resistivity by increasing specular scattering of electrons at interfaces.

  16. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  17. Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations

    Directory of Open Access Journals (Sweden)

    Tanveer A. Dar

    2013-05-01

    Full Text Available Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x  0.03, 0.05 and 0.07 by weight thin films prepared by pulsed laser deposition technique. The films are characterized by X-ray diffraction, Uv-vis spectroscopy, X-ray photoelectron spectroscopy. We observed a slight red shift in the optical band gap in the NiZnO subsequent to Ni doping. This shift can be assigned due to the sp-d exchange interaction of Ni- d states with s and p-states of ZnO. Also X-ray photoelectron spectroscopy studies show that Ni has well substituted in + 2 oxidation state by replacing Zn2+.

  18. Thin film zinc oxide gas sensor fabricated using near-field electrospray

    Science.gov (United States)

    Zheng, Gaofeng; Zhu, Ping; Sun, Lingling; Jiang, Jiaxin; Liu, Juan; Wang, Xiang; Li, Wenwang

    2016-12-01

    Near-field electrospray was used to deposit zinc acetate precursor particles over comb electrodes. These particles were heated and oxidized to form a zinc oxide (ZnO) semiconductor at 500 °C. The resulting ZnO thin film on the comb electrode was incorporated into a gas sensor, which was examined using a custom built measurement system. The current that was measured through the electrodes was used to calculate the resistance of the ZnO between the fingers of the comb electrode. The resistance decreased as the sensor was exposed to the target gas of ethanol, while the sensing response (R0/Rg) increased at higher concentrations of target gas. The ZnO sensor displayed high sensitivity because of the small diameters and high specific surface area of the electrospray particles. The ZnO sensors show great promise for use as micro/nano gas sensors as they exhibit high sensitivity, repeatability and stability.

  19. Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures

    Science.gov (United States)

    Ou, Yongxi; Pai, Chi-Feng; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

    2016-10-01

    We report measurements of the thickness and temperature (T ) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and Hf Ox/MgO ) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

  20. Influence of oxygen partial pressure on the metastable copper oxide thin films

    Science.gov (United States)

    Geçici, Birol; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat

    2016-12-01

    Paramelaconite (Cu4O3) is a metastable copper oxide. Metastable copper oxide thin films were deposited on glass substrates by reactive RF magnetron sputtering in argon (Ar) and oxygen (O2) gas mixture atmospheres. Ar/O2 gas ratios in the sputtering ambient were chosen as 1/1 and 1/9. The surface and optical properties were determined by X-ray diffractometer (XRD), atomic force microscope (AFM) and UV-Vis spectrophotometer. The XRD patterns of the samples exhibited single strong diffraction peaks at 35.39∘ and 35.49∘, corresponding to the (202) peak of Cu4O3. The mean thickness values were measured as 100 nm and 80 nm for the films deposited at 1/1 and 1/9 Ar/O2 gas ratios, respectively. The samples showed low transmittance and high absorbance in the high frequency region.

  1. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    Science.gov (United States)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  2. Low-temperature atomic layer deposition of copper(II) oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iivonen, Tomi, E-mail: tomi.iivonen@helsinki.fi; Hämäläinen, Jani; Mattinen, Miika; Popov, Georgi; Leskelä, Markku [Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland); Marchand, Benoît; Mizohata, Kenichiro [Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki (Finland); Kim, Jiyeon; Fischer, Roland A. [Chair of Inorganic Chemistry II, Ruhr-University Bochum, Universitätsstrasse 150, 44780 Bochum (Germany)

    2016-01-15

    Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap){sub 2}] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

  3. Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

    Science.gov (United States)

    Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

    2017-07-01

    Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

  4. Annealing effect on physical properties of evaporated molybdenum oxide thin films for ethanol sensing

    Science.gov (United States)

    Touihri, S.; Arfaoui, A.; Tarchouna, Y.; Labidi, A.; Amlouk, M.; Bernede, J. C.

    2017-02-01

    This paper deals with some physical investigations on molybdenum oxide thin films growing on glass substrates by the thermal evaporation method. These films have been subjected to an annealing process under vacuum, air and oxygen at various temperatures 673, 723 and 773 K. First, the physical properties of these layers were analyzed by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and optical measurements. These techniques have been used to investigate the oxygen index in MoOx properties during the heat treatment. Second, from the reflectance and transmittance optical measurements, it was found that the direct band gap energy value increased from 3.16 to 3.90 eV. Finally, the heat treatments reveal that the oxygen index varies in such molybdenum oxides showing noticeably sensitivity toward ethanol gas.

  5. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    Energy Technology Data Exchange (ETDEWEB)

    Guimond, Sebastien

    2009-06-04

    The growth and the surface structure of well-ordered V{sub 2}O{sub 3}, V{sub 2}O{sub 5} and MoO{sub 3} thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V{sub 2}O{sub 3}(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V{sub 2}O{sub 3} bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V{sub 2}O{sub 5}(001) and MoO{sub 3}(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O{sub 2} in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V{sub 2}O{sub 5} and MoO{sub 3} layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a

  6. Thin film passivation of laser generated 3D micro patterns in lithium manganese oxide cathodes

    Science.gov (United States)

    Pröll, J.; Kohler, R.; Bruns, M.; Oberst, V.; Weidler, P. G.; Heißler, S.; Kübel, C.; Scherer, T.; Prang, R.; Seifert, H. J.; Pfleging, W.

    2013-03-01

    The increasing need for long-life lithium-ion batteries requires the further development of electrode materials. Especially on the cathode side new materials or material composites are needed to increase the cycle lifetime. On the one hand, spinel-type lithium manganese oxide is a promising candidate to be used as cathode material due to its non-toxicity, low cost and good thermal stability. On the other hand, the spinel structure suffers from change in the oxidation state of manganese during cycling which is also accompanied by loss of active material into the liquid electrolyte. The general trend is to enhance the active surface area of the cathode in order to increase lithium-ion mobility through the electrode/electrolyte interface, while an enhanced surface area will also promote chemical degradation. In this work, laser microstructuring of lithium manganese oxide thin films was applied in a first step to increase the active surface area. This was done by using 248 nm excimer laser radiation and chromium/quartz mask imaging techniques. In a second step, high power diode laser-annealing operating at a wavelength of 940 nm was used for forming a cubic spinel-like battery phase. This was verified by means of Raman spectroscopy and cyclic voltammetric measurements. In a last step, the laser patterned thin films were coated with indium tin oxide (ITO) layers with a thickness of 10 nm to 50 nm. The influence of the 3D surface topography as well as the ITO thickness on the electrochemical performance was studied by cyclic voltammetry. Post-mortem studies were carried out by using scanning electron microscopy and focused ion beam analysis.

  7. Gold supported on thin oxide films: from single atoms to nanoparticles.

    Science.gov (United States)

    Risse, Thomas; Shaikhutdinov, Shamil; Nilius, Niklas; Sterrer, Martin; Freund, Hans-Joachim

    2008-08-01

    [Figure: see text]. Historically, people have prized gold for its beauty and the durability that resulted from its chemical inertness. However, even the ancient Romans had noted that finely dispersed gold can give rise to particular optical phenomena. A decade ago, researchers found that highly dispersed gold supported on oxides exhibits high chemical activity in a number of reactions. These chemical and optical properties have recently prompted considerable interest in applications of nanodispersed gold. Despite their broad use, a microscopic understanding of these gold-metal oxide systems lags behind their application. Numerous studies are currently underway to understand why supported nanometer-sized gold particles show catalytic activity and to explore possible applications of their optical properties in photonics and biology. This Account focuses on a microscopic understanding of the gold-substrate interaction and its impact on the properties of the adsorbed gold. Our strategy uses model systems in which gold atoms and clusters are supported on well-ordered thin oxide films grown on metal single crystals. As a result, we can investigate the systems with the rigor of modern surface science techniques while incorporating some of the complexity found in technological applications. We use a variety of different experimental methods, namely, scanning probe techniques (scanning tunneling microscopy and spectroscopy, STM and STS), as well as infrared (IR), temperature-programmed desorption (TPD), and electron paramagnetic resonance (EPR) spectroscopy, to evaluate these interactions and combine these results with theoretical calculations. We examined the properties of supported gold with increasing complexity starting from single gold atoms to one- and two-dimensional clusters and three-dimensional particles. These investigations show that the binding of gold on oxide surfaces depends on the properties of the oxide, which leads to different electronic properties of

  8. Gas-Sensing Performance of M-Doped CuO-Based Thin Films Working at Different Temperatures upon Exposure to Propane.

    Science.gov (United States)

    Rydosz, Artur; Szkudlarek, Aleksandra

    2015-08-14

    Cupric oxide (CuO) thin films are promising materials in gas sensor applications. The CuO-based gas sensors behaved as p-type semiconductors and can be used as part of an e-nose or smart sensor array for breath analysis. The authors present the investigation results on M-doped CuO-based (M = Ag, Au, Cr, Pd, Pt, Sb, Si) sensors working at various temperatures upon exposure to a low concentration of C3H8, which can be found in exhaled human breath, and it can be considered as a one of the biomarkers of several diseases. The films have been deposited in magnetron sputtering technology on low temperature cofired ceramics substrates. The results of the gas sensors' response are also presented and discussed. The Cr:CuO-based structure, annealed at 400 °C for 4 h in air, showed the highest sensor response, of the order of 2.7 at an operation temperature of 250 °C. The response and recovery time(s) were 10 s and 24 s, respectively. The results show that the addition of M-dopants in the cupric oxide films effectively act as catalysts in propane sensors and improve the gas sensing properties. The films' phase composition, microstructure and surface topography have been assessed by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) methods.

  9. Releasing of Cupric Ion of Three types of Copper-bearing Intrauterine Contraceptive Device in Simulated Uterine Fluid

    Institute of Scientific and Technical Information of China (English)

    Jie GAO; Ying LI; Jian-ping LIU; Xuan GU

    2007-01-01

    Objective To compare the cupric ion releasing in vitro of the three IUDs.Methods The stability of cupric ion releasing of IUDs including TCu 380A IUD (TCu 380A), Multiload Cu375 IUD (MCu 375) and Yuangong 365 copper-bearing indomethacin-releasing IUD (Yuangong 365) by the determination of cupric ion releasing in simulated uterine fluid. The simulated uterine fluid was used for releasing media. Copper ion was determined by flame atomic absorption spectrometerResults The cupric ion releasing of three IUDs were instable at the beginning and tend to be stable gradually. In the stable phase, the average level of cupric ion releasing of TCu380A, MCu375 and Yuangong 365 were 4.25±2.71 -7.62±6.42 μg,4.92±1.23 -8.62±3.08 μg and 2.19±0.40-4.68±1.66 μg, respectively. TCu380A had higher instable releasing level than those of Yuangong 365 (P<0. 05).Conclusion TCu 380A and MCu 375 showed a "burst release" during the first few days and the former was of great significance(P<0. 05). The initial cupric ion releasing of Yuangong 365 appeared to be the lowest, followed by MCu375 and TCu380A in a releasing order.

  10. Analysis on superhydrophobic silver decorated copper Oxide nanostructured thin films for SERS studies.

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Aishwarya, D; Sonia, S; Mangalaraj, D; Kumar, P Suresh; Rao, G Mohan

    2016-09-01

    The present work demonstrates the superhydrophobic and Surface Enhanced Raman Spectroscopy (SERS) active substrate performance of silver coated copper oxide (Ag@CuO) nanostructured thin films prepared by the SILAR process. Super hydrophobic substrates that combine super hydrophobic condensation effect and high enhancement ability of Ag@CuO nanoflowers are investigated for SERS studies. The possible growth mechanism for the formation of nanoflower arrays from nanospindles has been discussed. Morphology and crystallinity of the Ag@CuO thin films are confirmed using FESEM and XRD. The results obtained in the present study indicate that the as-deposited hydrophobic nanospindles structure converts to super hydrophobic nanoflower arrays on annealing at 200°C. The Ag@CuO super hydrophobic nanoflowers thin film based SERS substrates show highly enhanced Raman spectra with an EF value of 2.0×10(7) for (Rhodamine 6G) R6G, allowing a detection limit from a 10(-10)molL(-1) solution. The present study may provide a new perception in fabricating efficient super hydrophobic substrates for SERS, suggesting that the fabricated substrates are promising candidates for trace analysis of R6G dye and are expected to be widely used as highly sensitive SERS active substrates for various toxic dyes in the future.

  11. Self-assembly of a thin highly reduced graphene oxide film and its high electrocatalytic activity

    Science.gov (United States)

    Bai, Yan-Feng; Zhang, Yong-Fang; Zhou, An-Wei; Li, Hai-Wai; Zhang, Yu; Luong, John H. T.; Cui, Hui-Fang

    2014-10-01

    A thin highly reduced graphene oxide (rGO) film was self-assembled at the dimethyl formamide (DMF)-air interface through evaporation-induced water-assisted thin film formation at the pentane-DMF interface, followed by complete evaporation of pentane. The thin film was transferred onto various solid substrates for film characterization and electrochemical sensing. UV-visible spectrometry, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrochemistry techniques were used to characterize the film. An rGO film showing 82.8% of the transmittance at 550 nm corresponds to a few layers of rGO nanosheets. The rGO nanosheets cross-stack with each other, lying approximately in the plane of the film. An rGO film collected on a glassy carbon (GC) electrode exhibited improved electrical conductivity compared to GC, with the electrode charge-transfer resistance (Rct) reduced from 31 Ω to 22 Ω. The as-formed rGO/GC electrode was mechanically very stable, exhibiting significantly enhanced electrocatalytic activity to H2O2 and dopamine. Multiple layers of the rGO films on the GC electrode showed even stronger electrocatalytic activity to dopamine than that of the single rGO film layer. The controllable formation of a stable rGO film on various solid substrates has potential applications for nanoelectronics and sensors/biosensors.

  12. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  13. Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer

    Institute of Scientific and Technical Information of China (English)

    Lu Fei-Ping; Wang Qian; Zhou Xiang

    2013-01-01

    A 10-nm-thick molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices (OLEDs).The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) / tris(8-hydroxyquinoline) aluminum (Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device (1.8 cd/A).The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.

  14. Synthesis and study of oxides and chalcogenides: Thin films and crystals

    Science.gov (United States)

    Park, Sangmoon

    Several types of solid-state inorganic materials are prepared and characterized. By using the SILAR (Successive Ionic Layer Adsorption and Reaction) deposition method in conjunction with hydrothermal dehydration both low-temperature deposition and crystallization of oxide thin films are achieved. Various aspects of new transparent p-type materials are studied by examining both powders and thin films. Delafossite type compounds, CuMO2+delta (M = Ga, Sc, In), are synthesized by unique methods, yielding single-phase materials. The conductivity, mobility, and carrier concentration in BaCu2S2 thin films are described and p-type conductivity in the wide band-gap sulfide fluoride, BaCuSF, is examined. Structural and conducting properties of the various polymorphs of In2Se3 and the related structure of Sb2Te 2Se are considered. Structural characterization and cation ordering in Langasite derivatives, La3SnGa5O14 and La3SnGa3Al2O14, is described. Finally, selected aspects of the synthesis, structural characterization, and luminescence properties of Y3(SiO4)2Cl, Mn:Zn 2SiO4, and Eu:Y6WO12 are summarized.

  15. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Farzana Aktar [Experimental Physics Division, Atomic Energy Centre, 4, Kazi Nazrul Islam Avenue, Dhaka-1000 (Bangladesh); Hossain, Mohammad Abul [Department of Chemistry, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Mohiuddin, Tariq [Department of Physics, College of Science, Sultan Qaboos University, Muscat (Oman); Boby, Monny Akter [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Alam, Mohammad Sahabul, E-mail: msalam@ksu.edu.sa [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Department of Chemical Engineering, College of Engineering & King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  16. Modeling of Thin Film Solar Photovoltaic Based on Zno/Sns Oxide-Absorber Substrate Configuration

    Directory of Open Access Journals (Sweden)

    Anupam Verma

    2014-06-01

    Full Text Available Due to increasing awareness for using clean energy and therefore greater demand for relying more on the renewable sources which solar photovoltaic are part of because they pose very little or no threat to the environment comparatively, there is growing pressure for reducing electricity generation costs from solar photovoltaic (PV modules. Hence there is need for alternative new light absorbing materials that can provide conversion efficiencies which would be comparable to the current technologies based on crystalline silicon and CdTe or CIGS thin films at lower manufacturing costs and therefore providing cost effective solutions. In this paper we have evaluated the tin based absorber material (based on tin monosulfide; SnS as the next generation of Photovoltaic cells that can provide the desired performance in the long term. Therefore it explores the potential use of tin mono-sulfide as photovoltaic material for conversion of light into electricity. Zinc Oxide (ZnO thin films have been recognized as good candidates in photovoltaic devices acting as wide-band gap window layer. The results are presented through the numerical analysis done by AMPD-1D simulator tool to explore the possibility of using thin film and stable ZnO/SnS solar photovoltaic device with aim to achieve comparable conversion efficiencies.

  17. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Directory of Open Access Journals (Sweden)

    Farzana Aktar Chowdhury

    2015-10-01

    Full Text Available This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP adorned graphene oxide (GO nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW−1. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  18. Multi-Walled Carbon Nanotube-Doped Tungsten Oxide Thin Films for Hydrogen Gas Sensing

    Directory of Open Access Journals (Sweden)

    Adisorn Tuantranont

    2010-08-01

    Full Text Available In this work we have fabricated hydrogen gas sensors based on undoped and 1 wt% multi-walled carbon nanotube (MWCNT-doped tungsten oxide (WO3 thin films by means of the powder mixing and electron beam (E-beam evaporation technique. Hydrogen sensing properties of the thin films have been investigated at different operating temperatures and gas concentrations ranging from 100 ppm to 50,000 ppm. The results indicate that the MWCNT-doped WO3 thin film exhibits high sensitivity and selectivity to hydrogen. Thus, MWCNT doping based on E-beam co-evaporation was shown to be an effective means of preparing hydrogen gas sensors with enhanced sensing and reduced operating temperatures. Creation of nanochannels and formation of p-n heterojunctions were proposed as the sensing mechanism underlying the enhanced hydrogen sensitivity of this hybridized gas sensor. To our best knowledge, this is the first report on a MWCNT-doped WO3 hydrogen sensor prepared by the E-beam method.

  19. Multi-walled carbon nanotube-doped tungsten oxide thin films for hydrogen gas sensing.

    Science.gov (United States)

    Wongchoosuk, Chatchawal; Wisitsoraat, Anurat; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Kerdcharoen, Teerakiat

    2010-01-01

    In this work we have fabricated hydrogen gas sensors based on undoped and 1 wt% multi-walled carbon nanotube (MWCNT)-doped tungsten oxide (WO(3)) thin films by means of the powder mixing and electron beam (E-beam) evaporation technique. Hydrogen sensing properties of the thin films have been investigated at different operating temperatures and gas concentrations ranging from 100 ppm to 50,000 ppm. The results indicate that the MWCNT-doped WO(3) thin film exhibits high sensitivity and selectivity to hydrogen. Thus, MWCNT doping based on E-beam co-evaporation was shown to be an effective means of preparing hydrogen gas sensors with enhanced sensing and reduced operating temperatures. Creation of nanochannels and formation of p-n heterojunctions were proposed as the sensing mechanism underlying the enhanced hydrogen sensitivity of this hybridized gas sensor. To our best knowledge, this is the first report on a MWCNT-doped WO(3) hydrogen sensor prepared by the E-beam method.

  20. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

    Science.gov (United States)

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-12-01

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

  1. Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates

    Science.gov (United States)

    Han, Dedong; Chen, Zhuofa; Zhao, Nannan; Wang, Wei; Huang, Fuqing; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2014-03-01

    We have studied processing and characteristics of flexible Aluminum-doped Zinc Oxide thin-film transistors (AZO TFTs) fabricated on plastic substrates using radio frequency (rf) magnetron sputtering. To improve the performance of flexible AZO TFT, we studied effects of device structures on characteristics of the aluminum-doped zinc oxide thin film transistors. The electrical properties of top-gate type and bottom-gate type AZO TFTs were investigated, respectively. The top-gate type AZO TFTs shows a threshold voltage of 1.4 V, a Ion/Ioff current ratio of 1.0×107, a field effect mobility of 28.2 cm2/ V•s, a subthreshold swing of 0.19 V/decade. And the bottom-gate type AZO TFTs shows a threshold voltage of 1.7 V, a Ion/Ioff ratio of 1.0×107, a field effect mobility of 209 cm2/ V•s, a subthreshold swing of 0.16 V/decade, and the off current of less than 10-11A at room temperature. Both TFTs show low threshold voltage, high Ion/Ioff ratio and high field effect mobility. By comparison, the bottom-gate type AZO TFTs shows better characteristics. The flexible AZO-TFT is a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics due to flexible, transparency, high mobility, and low-temperature processing.

  2. Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

    Institute of Scientific and Technical Information of China (English)

    C.U. Mordi; M.A. Eleruja; B.A. Taleatu; G.O. Egharevba; A.V. Adedeji; 0.0. Akinwunmi; B. Olofinjana; C. Jeynes; E.O.B. Ajayi

    2009-01-01

    The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spec-troscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylaceto-nate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2.15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron mi-croscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than 1 micron for the deposited thin films of cobalt oxide.

  3. Titanium–vanadium oxide nanocomposite thin films: Synthesis, characterization and antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Wren, A.W.; Adams, B.M.; Pradhan, D.; Towler, M.R.; Mellott, N.P., E-mail: mellott@alfred.edu

    2014-04-01

    A sol–gel based deposition method was successfully developed to produce a series of crack-free, spatially homogeneous undoped/silver doped titania–vanadia oxide nanocomposite thin films. Thin films were characterized using Glancing Incidence X-ray Diffraction (GIXRD), X-ray Photoelectron Spectroscopy (XPS), and Ultraviolet Visible Spectroscopy (UV–Vis). It was determined via both XRD and XPS that when calcined at 450 °C the nanocomposite crystallinity was a function of sol composition. Additionally, it was determined via GIXRD that upon silver doping, silver was incorporated into the vanadia structure or present in silver oxide form in crystalline films. A red shift within the UV–Vis spectra was observed with an increase of vanadia concentration from 0 to 100% respectively. Antibacterial analysis conducted on Escherichia coli and Staphylococcus epidermidis demonstrated that films exposed to light showed greater antibacterial properties. - Highlights: • Nanocomposite crystallinity was a function of sol composition. • Silver was incorporated into the vanadia structure. • A red shift was observed with an increase of vanadia concentration. • Antibacterial analysis conducted on Escherichia coli and Staphylococcus epidermidis.

  4. Nano-vanadium oxide thin films in mixed phase for microbolometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A; Bharat Kumar Reddy, Y [Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Nagendra, C L [LEOS, ISRO, Peenya Industrial Estate, Bangalore 560060 (India)], E-mail: manu@iitm.ac.in

    2008-10-07

    Among the several phases of vanadium oxide, mixed phases of VO{sub 2} and V{sub 2}O{sub 5} are preferred for uncooled micro-bolometers with low noise. The aim of this investigation is to achieve mixed phase VO{sub 2} and V{sub 2}O{sub 5} thin films with nanometre grain sizes and high temperature coefficient of resistance (TCR). Since the phase depends upon the oxygen reactivity, these vanadium oxide thin films are prepared by reactive electron beam evaporation at different oxygen flow rates and substrate temperatures. The mixed phases have been evaluated through x-ray diffraction and x-ray photo emission studies. The temperature dependence of resistance has shown that the films grown at 473 K with 2.8 x 10{sup -5} mbar chamber pressure of oxygen (VO{sub 2} : V{sub 2}O{sub 5} ratio of 36 : 64) have the highest TCR of -3.2 K{sup -1} with a reasonable low resistance (120 {omega}/square)

  5. Characterization of Tungsten Oxide Thin Films Produced by Spark Ablation for NO2 Gas Sensing.

    Science.gov (United States)

    Isaac, Nishchay A; Valenti, Marco; Schmidt-Ott, Andreas; Biskos, George

    2016-02-17

    Tungsten oxides (WOx) thin films are currently used in electro-chromic devices, solar-cells and gas sensors as a result of their versatile and unique characteristics. In this study, we produce nanoparticulate WOx films by spark ablation and focused inertial deposition, and demonstrate their application for NO2 sensing. The primary particles in the as-deposited film samples are amorphous with sizes ranging from 10 to 15 nm. To crystallize the samples, the as-deposited films are annealed at 500 °C in air. This also caused the primary particles to grow to 30-50 nm by sintering. The morphologies and crystal structures of the resulting materials are studied using scanning and transmission electron microscopy and X-ray diffraction, whereas information on composition and oxidation states are determined by X-ray photoemission spectroscopy. The observed sensitivity of the resistance of the annealed films is ∼100 when exposed to 1 ppm of NO2 in air at 200 °C, which provides a considerable margin for employing them in gas sensors for measuring even lower concentrations. The films show a stable and repeatable response pattern. Considering the numerous advantages of spark ablation for fabricating nanoparticulate thin films, the results reported here provide a promising first step toward the production of high sensitivity and high accuracy sensors.

  6. Cupric natural zeolites as microbic ides;Zeolitas naturales cupricas como microbicidas

    Energy Technology Data Exchange (ETDEWEB)

    Contreras A, D.; Olguin G, M. T.; Alcantara D, D.; Burrola A, C., E-mail: teresa.olguin@inin.gob.m [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2009-07-01

    The Escherichia coli and the Candida albicans are considered contamination indicators for what these organisms reflect the water quality. The natural zeolites by their characteristics and properties, they could incorporate to a waters treatment system, as ion exchange, adsorbents and/or microbiocid agents, representing an alternative method of low cost. Inside this investigation work was found that depending on the microorganism type, it varies the quantity of cupric zeolite that is required to carry out the water disinfection, being great for the case of yeasts than the bacteria s. In addition to that marked differences are presented in the required time to reach this process. The characterization of the natural zeolite material, sodium and cupric, was realized by means of scanning electron microscopy, determining the elementary composition (Energy Dispersive Spectroscopy) of each one of them, and by X-ray diffraction. (Author)

  7. Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

    Science.gov (United States)

    Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun

    2016-08-01

    Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current-voltage and transient current-time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm2 v-1 s-1), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability.

  8. Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

    Science.gov (United States)

    Musa, Nurhazwani; Halim, Nurul Farhanah Ab.; Ahmad, Mohd Noor; Zakaria, Zulkhairi; Hashim, Uda

    2017-03-01

    A green method and eco-friendly solution were used to chemically reduce graphene oxide (GO) to graphene using green reductant. In this study, graphene oxide (GO) were prepared by using Tours method. Then, reduced graphene oxides (rGO) were prepared by using three typical reduction agents: L-ascorbic acid (L-AA), formamidinesulfinic acid (FAS) and sodium sulfite (Na2SO3). The reduced materials were characterized by Fourier transform infrared spectroscopy (FTIR), Thermo gravimetric analysis (TGA) and X-ray diffraction (XRD). Graphene based organic thin film transistor (G-OTFT) was prepared by a spin coating and thermal evaporation technique. The electrical characterization of G-OTFT was analyzed by using semiconductor parameter analyzer (SPA). The G-OTFT devices show p-type semiconducting behaviour. This article focuses on the synthesis and reduction of graphene oxide using three different reductants in order to maximise its electrical conductivity. The rGO product demonstrated a good electrical conductivity performance with highly sensitivity sensor.

  9. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  10. Sol-gel deposited aluminum-doped and gallium-doped zinc oxide thin-film transparent conductive electrodes with a protective coating of reduced graphene oxide

    Science.gov (United States)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-04-01

    Using a traditional sol-gel deposition technique, we successfully fabricated aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) thin films on glass substrates. Employing a plasma treatment method as the postannealing process, we produced thin-film transparent conductive electrodes exhibiting excellent optical and electrical properties, with transmittance greater than 90% across the entire visible spectrum and the near-infrared range, as well as good sheet resistance under 200 Ω/sq. More importantly, to improve the resilience of our fabricated thin-film samples at elevated temperatures and in humid environments, we deposited a layer of reduced graphene oxide (rGO) as protective overcoating. The stability of our composite AZO/rGO and GZO/rGO samples improved substantially compared to that of their counterparts with no rGO coating.

  11. Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors

    Science.gov (United States)

    Lee, Keun Ho; Park, Jee Ho; Yoo, Young Bum; Han, Sun Woong; Jong Lee, Se; Baik, Hong Koo

    2015-08-01

    In this study, we present a simple process for the fabrication of aqueous-solution-processed metal oxide thin-film transistors (TFTs) via the manipulation of precursor solution temperature. Indium oxide TFTs fabricated from a solution of indium nitrate at 4 °C exhibited the highest mobility of 2.73 cm2/(V·s) at an annealing temperature of 200 °C. When the temperature of the metal oxide precursor solution is 4 °C, metal cations within the solution can be fully surrounded by H2O molecules owing to the high dielectric constant of H2O at low temperatures. These metal complexes are advantageous for the conversion of metal oxides via thermally driven hydrolysis and condensation processes due to their high potential energies. The same techniques have been applied successfully with high-order metal oxides including indium zinc oxide, indium gallium oxide, and indium gallium zinc oxide.

  12. Anodic deposition of colloidal iridium oxide thin films from hexahydroxyiridate(IV) solutions.

    Science.gov (United States)

    Zhao, Yixin; Vargas-Barbosa, Nella M; Hernandez-Pagan, Emil A; Mallouk, Thomas E

    2011-07-18

    A facile, in-situ deposition route to stable iridium oxide (IrO(x)·nH(2)O) nanoparticle thin films from [Ir(OH)(6)](2-) solutions is reported. The [Ir(OH)(6)](2-) solution, made by alkaline hydrolysis of [IrCl(6)](2-), is colorless and stable near neutral pH, and forms blue IrO(x)·nH(2)O nanoparticle suspensions once it is adjusted to acidic or basic conditions. IrO(x)·nH(2)O nanoparticle thin films are grown anodically on glassy carbon, fluorine-doped tin oxide, and gold electrodes by electrolyzing [Ir(OH)(6)](2-) solutions at +1.0-1.3 V versus Ag/AgCl. The thickness of the IrO(x)·nH(2)O films can be controlled by varying the concentration of [Ir(OH)(6)](2-) , the deposition potential, and/or the deposition time. These thin films are stable between pH 1 and 13 and have the lowest overpotential (η) for the oxygen evolution reaction (OER) of any yet reported. Near neutral pH, the Tafel slope for the OER at a IrO(x)·nH(2)O film/Au rotating disk electrode was 37-39 mV per decade. The exchange current density for the OER was 4-8 × 10(-10) A cm(-2) at a 4 mC cm(-2) coverage of electroactive Ir.

  13. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    Energy Technology Data Exchange (ETDEWEB)

    Busch, C., E-mail: Claudia.Busch@uni-due.de; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R. [University of Duisburg-Essen, Faculty of Engineering and Center for NanoIntegration Duisburg-Essen (CeNIDE) (Germany)

    2012-06-15

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO{sub x}, and indium oxide, In{sub 2}O{sub 3}. The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10{sup -6} cm{sup 2V-1s-1}, the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  14. Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.

    Science.gov (United States)

    Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Yoon, Tae-Sik; Choi, Young Jin; Kang, Chi Jung

    2015-11-01

    The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at -0.7 V, and the reset voltage occurred at (-)-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.

  15. Highly Efficient and Versatile Acetalization of Glycol Catalyzed by Cupric p-Toluenesulfonate

    Institute of Scientific and Technical Information of China (English)

    LIU,Cai-Hua; YU,Xin-Yu; LIANG,Xue-Zheng; WANG,Wen-Juan; YANG,Jian-Guo; HE,Ming-Yuan

    2007-01-01

    Acetalization of glycol with carbonyl compounds was carried out catalyzed by cupric p-toluenesulfonate. These carbonyl compounds included cyclohexanone, propionoaldehyde, n-butyraldehyde, iso-butyraldehyde, n-valeraldehyde, benzaldehyde and butanone. Satisfactory results were obtained: the conversions of these carbonyl compounds were more than 90%, the selectivities were higher than 99.1%, only 0.1% mole ratio of catalyst to substrate and 90 min were sufficient in most cases. The catalyst and products were separated easily by phase separation.

  16. Ferric and cupric ions requirement for DNA single-strand breakage by H2O2.

    Science.gov (United States)

    Tachon, P

    1989-01-01

    Hydrogen peroxide (H2O2), was able to nick the replicative form of the phage fd, without the addition of a reducing agent or of a metal. This DNA single-strand breakage decreased with an increase of the ionic strength, suggesting that H2O2 reacted with traces of metal bound to DNA. When cupric of ferric ions were added, the rate of DNA single-strand breakage by H2O2 greatly increased and it was 20-30 times faster with cupric than with ferric ions. The addition of EDTA at an equimolar ratio or in excess of metal prevented partially DNA single-strand cleavage by H2O2 in the presence of ferric ions and completely when cupric ions were used. Superoxide dismutase prevented DNA single-strand breakage by H2O2 and ferric ions. On the contrary, with cupric ions and H2O2, the addition of superoxide dismutase increased the rate of DNA single-strand breakage. That superoxide dismutase was acting catalytically was shown by the loss of its effects after heat inactivation of the enzyme. The results of the present study show that besides its involvement in the Fenton reaction, H2O2 is able to reduce the metal bound to DNA, generating the superoxide anion radical or/and its protonated form, the perhydroxyl radical involved in DNA nicking. On the other hand, the ability of cuprous ions unlike ferrous ions to dismutate the superoxide radical may explain some differences observed between iron and copper in the DNA single-strand breakage by H2O2.

  17. Characterization of cobalt oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Louardi, A.; Rmili, A.; Ouachtari, F.; Bouaoud, A. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco)

    2011-09-15

    Highlights: > Co{sub 3}O{sub 4} thin films show a micro porous structure. > Co{sub 3}O{sub 4} thin films are formed with spherical grains less than 50 nm in diameter. > The porous structure of Co{sub 3}O{sub 4} films is expected to have promising application in electrochromism. - Abstract: Cobalt oxide (Co{sub 3}O{sub 4}) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of hydrated cobalt chloride salt (CoCl{sub 2}.6H{sub 2}O) as source of cobalt. The films were deposited onto the amorphous glass substrates kept at different temperatures (300-500 deg. C). The influences of molar concentration of the starting solution and substrate temperature on the structural, morphological and optical properties of (Co{sub 3}O{sub 4}) thin films were studied. It was found from X-ray diffraction (XRD) analysis that the films prepared with molar concentration greater than 0.025 M/L were polycrystalline spinel type cubic structure. The preferred orientation of the crystallites of these films changes gradually from (6 2 2) to (1 1 1) when the substrate temperature increases. By Raman spectroscopy, five Raman active modes characteristic of Co{sub 3}O{sub 4} spinel type cubic structure were found and identified at 194, 484, 522, 620 and 691 cm{sup -1}. The scanning electron microscopy (SEM) images showed micro porous structure with very fine grains less than 50 nm in diameter. These films exhibited also a transmittance value of about 70% in the visible and infra red range.

  18. From liquid to thin film: colloidal suspensions for tungsten oxide as an electrode material for Li-ion batteries

    OpenAIRE

    2016-01-01

    Using a colloidal suspension, tungsten oxide thin films (150 nm) have been prepared via ultrasonic spray deposition using two different current collectors, namely TiN and Pt. First, the precursor chemistry was studied, revealing that the tungsten present is reduced due to the formation of chlorine gas. Due to a dehydrogenation 1,1-diethoxyethane (DEE) and hydrogen chloride (HCl) evolve from the precursor, reducing the chloride content of the precursor. The thin films were annealed at 400 and ...

  19. Free cupric ions in contaminated agricultural soils around a copper mine in eastern Nanjing City, China

    Institute of Scientific and Technical Information of China (English)

    LUO Xiao-san; ZHOU Dong-mei; WANG Yu-jun

    2006-01-01

    To determine the environmental free metal ion activity was a recent hot issue. A method to measure low-level free cupric ion activity in soil solution extracted with 0.01 mol/L KNO3 was developed by using cupric ion-selective electrode (ISE) and calibrating with Cu-buffer solution. Three copper buffers including iminodiacetic acid (IDA), ethylenediamine (EN), and glycine (Gly)were compared for calibrating the Cu-ISE curves in the range of free cupric ions (pCu2+) 7-13. The Cu-EN buffer showed the best electrode response and thus was applied as the calibration buffer. The pCu2+ of 39 contaminated agricultural soils around a copper mine was measured, ranging from 5.03 to 9.20. Most Cu in the soil solutions was found to be complexed with dissolved soil organic matters, averaging 98.1%. The proportion of free Cu2+ ions in the soil solutions decreased with the increasing of solution pH. Soluble Cu and free Cu2+ ions concentrations were analyzed by multiple linear regressions to evaluate the effects of soil properties on metal levels and speciation. The results showed that soil solution pH was the most significant factor influencing pCu2+ (with R2 value of 0.76), while not important for the soluble Cu concentration.

  20. Nanostructured CuO Thin Films Prepared through Sputtering for Solar Selective Absorbers

    Directory of Open Access Journals (Sweden)

    Senthuran Karthick Kumar

    2013-01-01

    Full Text Available Nanostructured cupric oxide (CuO thin films have been deposited on copper (Cu substrates at different substrate temperatures and oxygen to argon gas ratios through direct current (DC reactive magnetron sputtering. The deposited CuO thin films are characterized by using X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, profilometry, and spectrophotometry techniques. The crystalline phases, morphology, optical properties, and photothermal conversion efficiency of the CuO thin films are found to be significantly influenced by the change in substrate temperature and oxygen to argon gas ratio. The variations in the substrate temperature and oxygen to argon gas ratio have induced changes in Cu+ and Cu2+ concentrations of the CuO thin films that result in corresponding changes in their optical properties. The CuO thin film prepared at a substrate temperature of 30°C and O2 to Ar gas ratio of 1 : 1 has exhibited high absorptance and low emittance; thus, it could be used as a solar selective absorber in solar thermal gadgets.

  1. XPS, LEED and STM study of thin oxide films formed on Cr(110)

    Science.gov (United States)

    Maurice, V.; Cadot, S.; Marcus, P.

    2000-06-01

    The growth, thickness, composition and structure of chromium oxide thin films formed by exposing Cr(110) single-crystal surfaces to gaseous oxygen at 300 and 625 K have been investigated by XPS, LEED and STM measurements. The oxide films formed at the two temperatures are significantly different. At 300 K, a granular and non-crystalline oxide is formed, which grows with a constant ˜Cr 2O 3 stoichiometry up to a limiting thickness of 0.9 nm. The film is hydrated with a water content of 10-20%, which decreases upon annealing. Nuclei of oxide with a lateral dimension of ˜0.7 nm and a height of ˜0.2 nm have been observed in the nucleation stage. These nuclei grow predominantly laterally and coalesce to fully cover the substrate surface prior to the thickening stage. At 625 K, a first stage of oxygen adsorption is observed in which stripes 1.5-2.3 nm wide and parallel to the Cr[001] direction are observed after annealing in UHV. They correspond to narrow segments of mixed and close-packed planes of O atoms and ions having a geometry and orientation similar to those of the anions planes in the oxide crystals. Rows of adatoms, possibly Cr 3+ ions of oxide nuclei, are observed above the stripes. Thickening at 625 K leads to the formation of a non-crystalline oxide, which grows up to a limiting thickness of 4.6 nm. The presence of Cr 3+ vacancies related to a significant cation transport through the oxide film in this temperature regime is detected. After UHV annealing at 825 or 925 K, the film is anhydrous. The Cr 3+ vacancies are accumulated at the metal/oxide film interface. The film crystallizes in epitaxy with the substrate in the following orientation: α-Cr 2O 3(0001)‖Cr(110) and α-Cr 2O 3[213¯0]‖Cr[001]. The STM measurements of the unit cell of the α-Cr 2O 3(0001) surface are consistent with a termination by a cation plane and show three tunneling sites assigned to the various possible locations of the Cr 3+ ions at room temperature due to surface

  2. Oxidation of magnetron sputtered La-Si thin films for solide oxide fuel cell electronlytes

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, J.C. [SEG-CEMUC, Mechanical Department, University of Coimbra, Rua Luis Reis Santos, 3030-788 Coimbra (Portugal)], E-mail: joao.oliveira@dem.uc.pt; Horwat, D. [Laboratoire de Science et Genie des Surfaces (UMR 7570), Ecole des Mines, Parc de Saurupt - F 54042 Nancy Cedex (France)], E-mail: david.horwat@mines.inpl-nancy.fr; Billard, A. [Laboratoire d' Etudes et de Recherches sur les Materiaux, les Procedes et les Surfaces, UTBM, Universite de Technologie de Belfort-Montbeliard, 90010 Belfort (France)], E-mail: alain.billard@utbm.fr; Cavaleiro, A. [SEG-CEMUC, Mechanical Department, University of Coimbra, Rua Luis Reis Santos, 3030-788 Coimbra (Portugal)], E-mail: albano.cavaleiro@dem.uc.pt

    2009-01-30

    La-Si thin films were deposited on stainless steel substrates by magnetron sputtering from pure La and Si targets. The Si/(Si + La) atomic ratio in the films was varied from 43.2 to 59.3% by adjusting the discharge current on the La target. The films had a homogeneous chemical composition down to the substrate and sharp interfaces. Annealing the films in air at 1173 K promotes the formation of apatite-structure La{sub 9.33}Si{sub 6}O{sub 26} and the diffusion of different species from the film to the substrate and vice-versa, resulting in broadening the interfaces. X-Ray diffraction showed that all the as-deposited films had an amorphous structure. The formation of the LaSi{sub 2} phase at intermediate temperatures was observed for the films deposited with higher Si contents while the films deposited with lower Si contents remained amorphous up to the start of the apatite structure crystallization process. The lanthanum silicate apatite-like phase (La{sub 9.33}Si{sub 6}O{sub 26}) was obtained only after annealing at 1173 K, excepted for the film with the lower Si content which is already partially crystallized after annealing at 1073 K. Quite pure La{sub 9.33}Si{sub 6}O{sub 26} was obtained only after annealing the film with the highest Si content (Si/(Si + La) = 59.3%) although the theoretical Si/(Si + La) atomic ratio for apatite structure lanthanum silicate is 39%. For the other films, La{sub 2}O{sub 3} was always detected when the lanthanum silicate phase was formed. Both phenomena clearly resulted from the strong diffusion of silicon excess towards the stainless steel substrate.

  3. Metal-Organic Framework Thin Films as Platforms for Atomic Layer Deposition of Cobalt Ions To Enable Electrocatalytic Water Oxidation.

    Science.gov (United States)

    Kung, Chung-Wei; Mondloch, Joseph E; Wang, Timothy C; Bury, Wojciech; Hoffeditz, William; Klahr, Benjamin M; Klet, Rachel C; Pellin, Michael J; Farha, Omar K; Hupp, Joseph T

    2015-12-30

    Thin films of the metal-organic framework (MOF) NU-1000 were grown on conducting glass substrates. The films uniformly cover the conducting glass substrates and are composed of free-standing sub-micrometer rods. Subsequently, atomic layer deposition (ALD) was utilized to deposit Co(2+) ions throughout the entire MOF film via self-limiting surface-mediated reaction chemistry. The Co ions bind at aqua and hydroxo sites lining the channels of NU-1000, resulting in three-dimensional arrays of separated Co ions in the MOF thin film. The Co-modified MOF thin films demonstrate promising electrocatalytic activity for water oxidation.

  4. Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-12-15

    (200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

  5. ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

    OpenAIRE

    Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

    2016-01-01

    ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might als...

  6. Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang; Chen, Hua-Mao

    2017-01-01

    We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

  7. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  8. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  9. Understanding and Enhancing the Photostability of Nanoporous Metal Oxide Thin Films for Solar Hydrogen Generation

    Science.gov (United States)

    Chitrada, Kalyan Chakravarthi

    under dark conditions. The binary bismuth (III) oxide, in spite being a good photocatalytic material, did not receive as much attention as other bismuth based ternary oxides for photoelectrochemical water splitting application. In this present study, large surface area nanoporous bismuth oxide thin films were synthesized by the electrochemical anodization. These anodic oxides exhibited a dual layered structure having a planar inner oxide and nanoporous outer oxide. Effect of the nanoscale dimensions of the oxides on the photoelectrochemical behavior was studied to understand the charge transport, charge recombination behavior, and long term stability of the material. A maximum photo current density of 0.97 mA/cm2 was observed for the sample anodized at 10 V at 1.53 VRHE. The nanoporous anodic oxides showed a charge carrier density in the range of 1.2 x 1017 -- 4.8 x 1018 cm-3 without illumination and about 60% increase in the charge carrier density upon illumination. However a decay in photo current was observed for the bismuth oxide samples was due to accumulation of holes on the electrode surface. This hole-accumulation was mitigated by the addition of hole scavengers. Addition of hydrogen peroxide as hole scavenger increased the photo current density by about 4 times in 0.5 M Na2SO 4 (pH: 5.8) electrolyte. Addition of H2O2 in 1 M KOH (pH: 13.7) showed an increase-decrease behavior and high photo current density of ~10 mA/cm2 at a bias potential of 0.65 VRHE . The high photo activity observed in this electrolyte was attributed to the in-situ formation of Bi2O4-x phase by the photo-conversion of the beta-Bi2O3 at the surface. The photo-converted Bi2O4-x has a smaller band gap (1.4 eV) and therefore harvested more light in the visible region. This in-situ formation of low band gap phases in the presence of H2O2 during solar water splitting is an interesting observation which has been reported for the first time and this will help design material with very high photo-activity.

  10. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2016-10-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  11. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    Science.gov (United States)

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization.

  12. Gamma irradiation effects on the properties of indium zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, Doina; Socol, Gabriel [National Institute for Lasers, Plasma and Radiation Physics, RO-077125 Magurele, Ilfov (Romania); Le Caër, Sophie [CEA/Saclay, DSM/IRAMIS/NIMBE UMR 3685/LIONS, Bâtiment 546, F-91191, Gif-sur-Yvette Cedex (France); Trinca, Liliana M. [National Institute for Materials Physics, RO-077125 Magurele, Ilfov (Romania); Faculty of Physics, University of Bucharest, RO-077125 Magurele, Ilfov (Romania); Galca, Aurelian C. [National Institute for Materials Physics, RO-077125 Magurele, Ilfov (Romania); Pantelica, Dan; Ionescu, Paul [Horia Hulubei National Institute for Physics and Nuclear Engineering, RO-077125 Magurele, Ilfov (Romania); Craciun, Valentin, E-mail: valentin.craciun@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, RO-077125 Magurele, Ilfov (Romania)

    2016-09-01

    Thin films of amorphous and polycrystalline indium zinc oxide (IZO) having various In/(In + Zn) nominal compositions from 0.3 to 0.9 were grown by the pulsed laser deposition technique at room temperature or at 400 °C on oxidized Si and quartz substrates. After deposition, the films were gamma irradiated at doses of 10, 20 and 30 kGy under Ar atmosphere. Grazing incidence X-ray diffraction investigations could not find measurable changes of the structure after irradiation. Simulations of the X-ray reflectivity (XRR) and diffuse scattering curves acquired from the films showed a small density decrease after irradiation, accompanied by an increase of the thickness and surface roughness. Spectroscopic ellipsometry investigations confirmed the increase of the IZO films' thickness after irradiation, being in agreement with the XRR results. Small changes in the refractive index, most probably caused by changes in the film density were also observed. Four point probe measurements showed very small resistivity increases after irradiation, with the films containing higher In concentration presenting negligible changes. - Highlights: • Amorphous and polycrystalline indium zinc oxide (IZO) films were gamma irradiated. • The gamma radiation does not change the structure of IZO films. • Gamma radiation induces small increases in thickness and roughness of IZO films. • Radiation induced decrease in density was correlated to refractive index decrease.

  13. Resistance repeatability study of ion-beam deposited vanadium oxide thin films

    Science.gov (United States)

    Alvarez, P.; Pearson, D. I. C.; Pochon, S.; Thomas, O.; Cooke, M.; Gunn, R.

    2016-09-01

    Ion Beam Sputter Deposition (IBSD) is a versatile technique particularly suited to applications requiring high quality, high performance layer materials as it allows independent and accurate control of the process parameters. Vanadium oxides, used for example in the fabrication of microbolometers, optical switches or optical storage, exhibit interesting properties such as a high Temperature Coefficient of Resistance (TCR), relatively low 1/f noise and a semiconductormetal phase transition close to room temperature. However, it is very challenging to control the stoichiometry of the deposited film as there are at least 25 different oxidation states of vanadium, few of which display the required electrical characteristics. In the present study, vanadium oxide thin layers were deposited by IBSD using an Oxford Ionfab300+ and analyzed with regard to their electrical properties. The impact of the system parameters on the resistance repeatability, wafer-to-wafer and batch-to-batch, was thoroughly investigated to provide the end user with a clear understanding of the factors affecting film resistivity while ensuring at the same time a steep variation of resistance with temperature, as notably required for uncooled bolometers. These parameters were balanced to also achieve a good deposition rate, throughput and uniformity over large device areas, compatible with the requirements of industrial applications.

  14. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  15. Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

    Science.gov (United States)

    Ghaderi, M.; de Graaf, G.; Wolffenbuttel, R. F.

    2016-08-01

    This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from  -100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

  16. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Xu Denghui [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Deng Zhenbo [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China)]. E-mail: zbdeng@center.njtu.edu.cn; Xu Ying [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Xiao Jing [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Liang Chunjun [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Pei Zhiliang [Institute of Metal Research, Chinese Academy of Science, Shenyang 110016 (China); Sun Chao [Institute of Metal Research, Chinese Academy of Science, Shenyang 110016 (China)

    2005-10-10

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar {sup o}C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10{sup -4}{omega}cm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm{sup 2}.

  17. Cupric ion reducing antioxidant capacity assay for antioxidants in human serum and for hydroxyl radical scavengers.

    Science.gov (United States)

    Apak, Reşat; Güçlü, Kubilay; Ozyürek, Mustafa; Bektaşoğlu, Burcu; Bener, Mustafa

    2010-01-01

    Tests measuring the combined antioxidant effect of the nonenzymatic defenses in biological fluids may be useful in providing an index of the organism's capability to counteract reactive species known as pro-oxidants, resist oxidative damage, and combat oxidative stress-related diseases. The selected chromogenic redox reagent for the assay of human serum should be easily accessible, stable, selective, and respond to all types of biologically important antioxidants such as ascorbic acid, alpha-tocopherol, beta-carotene, reduced glutathione (GSH), uric acid, and bilirubin, regardless of chemical type or hydrophilicity. Our recently developed cupric reducing antioxidant capacity (CUPRAC) spectrophotometric method for a number of polyphenols and flavonoids using the copper(II)-neocuproine reagent in ammonium acetate buffer is now applied to a complete series of plasma antioxidants for the assay of total antioxidant capacity of serum, and the resulting absorbance at 450 nm is recorded either directly (e.g., for ascorbic acid, alpha-tocopherol, and glutathione) or after incubation at 50 degrees C for 20 min (e.g., for uric acid, bilirubin, and albumin), quantitation being made by means of a calibration curve. The lipophilic antioxidants, alpha-tocopherol and beta-carotene, are assayed in dichloromethane. Lipophilic antioxidants of serum are extracted with n-hexane from an ethanolic solution of serum subjected to centrifugation. Hydrophilic antioxidants of serum are assayed in the centrifugate after perchloric acid precipitation of proteins. The CUPRAC molar absorptivities, linear ranges, and TEAC (trolox equivalent antioxidant capacity) coefficients of the serum antioxidants are established, and the results are evaluated in comparison with the findings of the ABTS/TEAC reference method. The intra- and inter-assay coefficients of variation (CVs) are 0.7 and 1.5%, respectively, for serum. The CUPRAC assay proved to be efficient for glutathione and thiol-type antioxidants

  18. Chemical vapour deposition of tungsten oxide thin films from single-source precursors

    Science.gov (United States)

    Cross, Warren Bradley

    This thesis describes the chemical vapour deposition (CVD) of tungsten oxide thin films on glass from a wide range of single-source precursors. Chapter 1 describes previous work that has motivated this research. Chapter 2 discusses the synthesis of conventional style candidates for single-source precursors. Reactions of WOCl4 with 3-methyl salicylic acid (MesaliH2) and 3,5-di-iso-propyl salicylic acid (di-i-PrsaliH2) yielded the ditungsten complexes [WO(Mesali)(MesaliH)2(mu-O)], 1, and [WO(di-i-Prsali)(di-i-PrsaliH)2(mu-O)], 2, and the monotungsten complex [WO(di-i-Pr sali)(di-i-PrsaliH)Cl], 3. Tungsten(VI) dioxo complexes were prepared by ligand exchange reactions of [WO2(acac)2], 4, yielding [WO2(catH)2], 5, and [WO2(malt)2], 6, (catH2 = 3,5-di-tert-butyl-catechol; maltH = maltol). Chapter 3 describes thermal analyses of the complexes 1 - 6 and tungsten hexaphenoxide, and consequently their suitability for CVD. The use of [W(OPh)6] and 2 - 6 in aerosol assisted CVD is reported in Chapter 4. Brown tungsten oxide was deposited from 2 and 3 at 600 °C; blue partially-reduced WO3-x thin films were deposited from [W(OPh)6] from 300 to 500 °C, from 4 at 600 °C and 6 at 620 °C. Sintering all of the coatings in air at 550 °C afforded yellow films of stoichiometric WO3. Raman spectroscopy and glancing angle XRD showed that coatings deposited from [W(OPh)6] at 300 °C were amorphous, whereas all the other films were the monoclinic phase gamma-tungsten oxide. Taking full advantage of the aerosol vaporisation technique led to the CVD of tungsten oxide films from polyoxometalate single-source precursors, as described in Chapter 5. The isopolyanion [nBu4N]2[W6O19], 7, afforded WO3 at 410 °C; the heteropolyanions [nBu4N]4H3[PW11O39], 8, and [nBu4N]4[PNbW11O40], 9, were used to deposit doped WO3 thin films in a highly-controlled manner at 480 °C. Thus, the unprecedented use of large, charged clusters for CVD was demonstrated. Chapter 6 describes investigations of the

  19. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  20. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    Science.gov (United States)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  1. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Szymańska, Magdalena, E-mail: magdalena_szymanska@its.waw.pl [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Gierałtowska, Sylwia; Wachnicki, Łukasz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Grobelny, Marcin; Makowska, Katarzyna [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mroczyński, Robert [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-05-01

    Highlights: • Structural and electrical characterization of HfO{sub x} and HfO{sub x}N{sub y} thin films. • Analysis of the influence of deposition process parameters on properties of films. • Investigation of the post-deposition annealing on HfO{sub x} and HfO{sub x}N{sub y} properties. • Experiment has been designed with use of Taguchi's orthogonal arrays. • The most favorable annealing temperature of HfO{sub x} and HfO{sub x}N{sub y} is 300 °C. - Abstract: The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfO{sub x}) and hafnium oxynitride (HfO{sub x}N{sub y}) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O{sub 2} flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfO{sub x} and HfO{sub x}N{sub y} layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO{sub x} or HfO{sub x}N{sub y} gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS)

  2. X-ray analysis and optical properties of nickel oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, PO 71452, Assiut (Egypt); Kaid, M.A.; Ali, M.G.S. [Physics Department, Faculty of Science, El-Minia University, El-Minia (Egypt)

    2014-11-15

    Highlights: • A fine NiO powders were prepared by a homogeneous precipitation method. • The microstructure and surface morphology of NiO powder were characterized. • The optical constants and film thicknesses of NiO thin films were obtained by SE. • The change in optical constants and energy gap were interpreted using microstructure parameters. - Abstract: Nanoparticles of NiO were prepared by a homogeneous precipitation method with an aqueous solution of nickel nitrate hexahydrate and citric acid. The microstructure and surface morphology of NiO powder were characterized by thermogravimetric (TGA) analysis, differential scanning calorimeter (DSC), X-ray diffraction (XRD), and infrared (IR) spectroscopy. Different thicknesses of nickel oxide (NiO) thin films were deposited onto highly cleaned glass substrates by the electron beam technique. Their structural characteristics were studied by X-ray diffraction (XRD) and scan electron microscope (SEM). The XRD investigation shows that NiO films are polycrystalline with an cubic type structure. The microstructure parameters, e.g., crystallite size and microstrain were calculated. The optical constants (n, k) and film thicknesses of NiO thin films were obtained by fitting the ellipsometric parameters (ψ and Δ) data using three layer model systems in the wavelength range 300–1100 nm. It is found that the refractive index, n increases with the increase of the film thickness. The possible optical transition in these films is found to be allowed direct transitions. The direct energy gaps increase with increasing of the film thickness.

  3. The stability of tin silicon oxide thin-film transistors with different annealing temperatures

    Science.gov (United States)

    Yang, Jianwen; Fu, Ruofan; Han, Yanbing; Meng, Ting; Zhang, Qun

    2016-07-01

    The influence of annealing temperature on the electrical properties of tin silicon oxide (TSO) thin-film transistors (TFTs) and the corresponding bias stress stability have been investigated. With increasing annealing temperature, the TSO films present a structure which is closer to crystallization, and it is conducive to the improvement of the mobility of TSO TFTs. Meanwhile, the positive bias stress (PBS) stability of TSO TFTs is ameliorated due to the decreasing traps at the interface of dielectric layer and channel layer. The threshold voltage shifts in opposite direction after being stressed under negative bias stress (NBS), which is due to the competition between electrons captured by defects related to oxygen vacancies in the channel layer and water molecule adsorption on the back channel.

  4. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    Science.gov (United States)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V-1 s-1, and the on-current increased from 2.43  ×  10-5 to 1.33  ×  10-4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  5. Influence of substrate temperature on the performance of zinc oxide thin film transistor*

    Institute of Scientific and Technical Information of China (English)

    Ma Junwei; Ran Feng; Xu Meihua; Ji Huijie

    2011-01-01

    Top-contact thin film transistors (TFTs) using radio frequency (RF) magnetron sputtering zinc oxide (ZnO) and silicon dioxide (SiO2) films as the active channel layer and gate insulator layer, respectively, ware fabricated. The performances of ZnO TFTs with different ZnO film deposition temperatures (room temperature,100 ℃ and 200 ℃) were investigated. Compared with the transistor with room-temperature deposited ZnO films,the mobility of the device fabricated at 200 ℃ is improved by 94% and the threshold voltage shift is reduced from 18 to 3 V (after 1 h positive gate voltage stress). Experimental results indicate that substrate temperature plays an important role in enhancing the field effect mobility, sharping the subthreshold swing and improving the bias stability of the devices. Atomic force microscopy was used to investigate the ZnO film properties. The reasons for the device performance improvement are discussed.

  6. Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance

    Science.gov (United States)

    Park, Jae Chul; Lee, Ho-Nyeon

    2015-01-01

    Self-aligned coplanar amorphous indium zinc oxide thin-film transistors (a-IZO TFTs) were fabricated. The a-IZO TFTs had a field-effect mobility of μFE = 24.4 cm2 V-1 s-1, a subthreshold slope of 180 mV/dec, and an on/off ratio of 109. As the channel length decreased, the threshold voltage VTH shifted to more negative voltages, and μFE increased due to the diffused carriers from the contact regions. The intrinsic field-effect mobility was estimated to be 15.05 cm2 V-1 s-1 in the linear mode and 13.28 cm2 V-1 s-1 in saturation mode. Under positive/negative bias-temperature-illumination stress, the shift in VTH was less than ±0.7 V after 11,000 s.

  7. Structure of a zinc oxide ultra-thin film on Rh(100)

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, J.; Kato, D.; Matsui, T. [Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mizuno, S. [Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816–8580 (Japan)

    2015-11-07

    The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I–V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I–V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimized models A and B, respectively.

  8. Nanostructured as-deposited indium tin oxide thin films for broadband antireflection and light trapping

    Science.gov (United States)

    Khan, Imran; Bauch, Martin; Dimopoulos, Theodoros; Dostalek, Jakub

    2017-08-01

    Indium tin oxide (ITO) thin films were sputter-deposited at ambient temperature on a glass-like substrate that was periodically nanostructured by UV nanoimprint lithography. Cross gratings of the corrugated and conformal ITO, with different periods and modulation depths, were tailored to exhibit light trapping or antireflection properties at specific spectral windows by combined optical simulations and experiments. For dense gratings, the light transmission in the 450-850 nm range was enhanced by 8% (absolute) compared to flat ITO films, which is one of the largest performance improvements reported in the literature for nanostructured transparent electrodes. Increasing the grating period shifts the threshold for diffraction coupling to waveguide modes in the visible and near infrared part of the spectrum, resulting in broad light trapping behaviour at wavelengths below this threshold. This work demonstrates a simple processing route at ambient temperature for the fabrication of high-performance transparent electrodes in order to fulfil different device requirements.

  9. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  10. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    Science.gov (United States)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-11-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

  11. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

    Science.gov (United States)

    Zhang, Yong-Hui; Mei, Zeng-Xia; Liang, Hui-Li; Du, Xiao-Long

    2017-04-01

    Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations. Project supported by the National Natural Science Foundation of China (Grants Nos. 61306011, 11274366, 51272280, 11674405, and 11675280).

  12. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  13. Thin copolymer-cased light-emitting display made with fluorine-foped tin oxide substrates

    Directory of Open Access Journals (Sweden)

    Lessmann Rudolf

    2004-01-01

    Full Text Available Seven-segment displays are used to show numerical quantities in electronic equipment, being present in most of the low-end electronics. In this work we describe a novel organic light emitting display made with poly(1,10 decanedioxy 2 methoxy - 1,2 phenylene - 1,2 ethenylene - 3,6 dimethoxy - 1,4 phenylene - 1,2 ethenylene 3 methoxy - 1,4 - phenylene (OPPVDBC, tris(8-hydroxyquinolinealuminum salt (Alq3 and a hole injection layer (PEDOT:PSS: poly(3,4 - ethylenedioxythiophene : poly(styrenesulfonate. The general device structure is FTO/PEDOT:PSS/OPPVDBC/Ca/Al or FTO/PEDOT:PSS/OPPVDBC/Alq3/Ca/Al. The FTO (fluorine-doped tin oxide thin films are transparent (transmittance > 80 % in the visible region of the spectrum, conductive (< 15 omega/º for 200 nm thick films, and present high chemical stability.

  14. Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Jinn P.; Endo, Tamio; Ellmer, Klaus; Gessert, Tim; Ginley, David

    2016-04-01

    World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.

  15. Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

    Science.gov (United States)

    Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; Henry, M. D.; Brumbach, M. T.; Ihlefeld, J. F.

    2017-02-01

    Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2 K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, and 1).

  16. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Rik Groenen

    2015-07-01

    Full Text Available The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO3 thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO3 stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10−2 mbars and 10−1 mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  17. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  18. Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arpana Agrawal

    2013-05-01

    Full Text Available The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies show the blue shift in the optical band gap subsequent to Mg doping. X-ray photoelectron spectroscopy results reveal the replacement of Zn2+ cation by Mg2+ ion.

  19. Physical Properties Investigation of Reduced Graphene Oxide Thin Films Prepared by Material Inkjet Printing

    Directory of Open Access Journals (Sweden)

    Veronika Schmiedova

    2017-01-01

    Full Text Available The article is focused on the study of the optical properties of inkjet-printed graphene oxide (GO layers by spectroscopic ellipsometry. Due to its unique optical and electrical properties, GO can be used as, for example, a transparent and flexible electrode material in organic and printed electronics. Spectroscopic ellipsometry was used to characterize the optical response of the GO layer and its reduced form (rGO, obtainable, for example, by reduction of prepared layers by either annealing, UV radiation, or chemical reduction in the visible range. The thicknesses of the layers were determined by a mechanical profilometer and used as an input parameter for optical modeling. Ellipsometric spectra were analyzed according to the dispersion model and the influence of the reduction of GO on optical constants is discussed. Thus, detailed analysis of the ellipsometric data provides a unique tool for qualitative and also quantitative description of the optical properties of GO thin films for electronic applications.

  20. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation

    Energy Technology Data Exchange (ETDEWEB)

    Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2013-10-21

    The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

  1. Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

    Science.gov (United States)

    Jeong, Jaewook

    2016-11-01

    In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

  2. New strain states and radical property tuning of metal oxides using a nanocomposite thin film approach

    Directory of Open Access Journals (Sweden)

    Judith MacManus-Driscoll

    2015-06-01

    Full Text Available Auxetic-like strain states were generated in self-assembled nanocomposite thin films of (Ba0.6Sr0.4TiO31−x − (Sm2O3x(BSTO − SmO. A switch from auxetic-like to elastic-like strain behavior was observed for x > 0.50, when the SmO switched from being nanopillars in the BSTO matrix to being the matrix with BSTO nanopillars embedded in it. A simple model was adopted to explain how in-plane strain varies with x. At high x (0.75, strongly enhanced ferroelectric properties were obtained compared to pure BSTO films. The nanocomposite method represents a powerful new way to tune the properties of a wide range of strongly correlated metal oxides whose properties are very sensitive to strain.

  3. Thermal Oxidation Preparation of Doped Hematite Thin Films for Photoelectrochemical Water Splitting

    Directory of Open Access Journals (Sweden)

    Song Li

    2014-01-01

    Full Text Available Sn- or Ge-doped hematite thin films were fabricated by annealing alloyed films for the purpose of photoelectrochemical (PEC water splitting. The alloyed films were deposited on FTO glass by magnetron sputtering and their compositions were controlled by the target. The morphology, crystalline structure, optical properties, and photocatalytic activities have been investigated. The SEM observation showed that uniform, large area arrays of nanoflakes formed after thermal oxidation. The incorporation of doping elements into the hematite structure was confirmed by XRD. The photocurrent density-voltage characterization illustrated that the nanoflake films of Sn-doped hematite exhibited high PEC performance and the Sn concentration was optimized about 5%. The doped Ge4+ ions were proposed to occupy the empty octahedral holes and their effect on PEC performance of hematite is smaller than that of tin ions.

  4. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan, E-mail: g.koster@utwente.nl [Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  5. Fabrication and properties of nanocrystalline zinc oxide thin film prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Sumetha Suwanboon

    2008-01-01

    Full Text Available Zinc oxide (ZnO thin films were prepared on glass substrate by sol-gel dip-coating method. The structural properties were investigated by x-ray diffraction (XRD method and atomic force microscope (AFM. The optical properties were measured by UV-Vis spectrophotometer. The XRD patterns showed that the films formed preferred orientation along c-axis which increased as a function of polyvinyl pyrrolidone (PVP concentration. The films gave the crystallite size of 15-18 nm calculated by Scherrer’s formula and grain size of 48-70 nm measured by AFM at different PVP concentrations. The direct optical band gap of the films was in the range of 3.80-4.08 eV.

  6. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    CERN Document Server

    Barbosa, M B; Redondo-Cubero, A; Miranda, S M C; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Méndez, B; Johnston, K; Alves, E; Vianden, R; Araújo, J P; Lorenz, K; Correia, J G

    2013-01-01

    The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\\,$min.) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe-defect complex. The ternary Cd$_x$Zn$_{1-x}$O (x=0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga$_2$O$_3$ samples, the substitution of the Cd probes in the octahedral Ga-site was observed, demonstrating the potential of ion-implantation for the doping of nanowires.

  7. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    Science.gov (United States)

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K.

    2015-06-01

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10-3 Ω-cm, carrier concentration 1.79×1020 cm3 and the mobility 7 cm2/Vs.

  8. Bifunctional polydopamine thin film coated zinc oxide nanorods for label-free photoelectrochemical immunoassay.

    Science.gov (United States)

    Yang, Yan; Hu, Weihua

    2017-05-01

    Photoelectrochemical (PEC) detection is a promising method for label-free immunoassay by reporting the specific biological recognition events with electrical signals. However, it is challenging to rationally incorporate immunosensing components with a photocurrent conversion interface, which generally necessitates multistep fabrication and careful tailoring of various components such as photoactive material and biological probe. For high detection reliability and reproducibility, it is highly desirable to rationally construct an efficient PEC interface with architecture as simple as possible. In this work, a novel yet simple PEC immunosensor based on bio-inspired polydopamine (PDA) thin film-coated zinc oxide (ZnO) nanorods was reported. In this PEC immunosensor, the PDA thin film serves simultaneously as a unique sensitizer for charge separation as well as a functional layer for probe antibody attachment. The photocurrent on this electrode under illumination decreases upon the immunoreaction on the surface, possibly due to the blocking effect of formed immunocomplexes on the access of reducing reagent to the photoelectrode, thus offering a simple and reliable platform for PEC label-free immunoassay. By using an antibody-antigen pair as a model, successful label-free immunoassay was achieved with a detection limit of 10pgmL(-1) and a dynamic range from 100pgmL(-1) to 500ngmL(-1). This work demonstrates intriguing electro-optical property and bioconjugation activity of PDA film and may pave the way toward advanced PEC immunoassays.

  9. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K., E-mail: jeyadheepan@eee.sastra.edu [Center for Nanotechnology and Advanced Biotechnology, SASTRA University, Thanjavur – 613401 (India); School of Electrical and Electronics Engineering, SASTRA University, Tirumalaisamudram, Thanjavur – 613401 (India)

    2015-06-24

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10{sup −3} Ω-cm, carrier concentration 1.79×10{sup 20} cm{sup 3} and the mobility 7 cm{sup 2}/Vs.

  10. DEVELOPMENT OF THIN FILM NANOCOMPOSITE EMBEDDED WITH GRAPHENE OXIDE FOR MgSO4 REMOVAL

    Directory of Open Access Journals (Sweden)

    I. WAN AZELEE

    2016-07-01

    Full Text Available Thin film nanocomposite (TFN membrane with graphene oxide (GO embedded into the polyamide (PA selective top layer has been developed for salt removal. 0.1 wt% of GO were dispersed in the trimesoyl chloride (TMC organic solution and incorporated into the PA layer during interfacial polymerization with piperazine. The fabricated TFN membrane was characterized in terms of the membrane morphological structure and surface hydrophilicity. The divalent magnesium sulfate (MgSO4 salt removal performance of the TFN was evaluated and compared with the thin film composite (TFC counterpart. The surface morphology of the TFN membranes was altered and the surface hydrophilicity was increased with the presence of GO. The incorporation of GO has improved the permeate water flux, in which maximum improvement of 140% compared to that of TFC has been obtained, without sacrificing much on the salt rejection properties. Although further investigation is required, this study has experimentally verified the potential application of GO to heighten the salt separation performance of TFN membranes.

  11. Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

    Science.gov (United States)

    Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

    2016-11-01

    Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

  12. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Science.gov (United States)

    Altintas Yildirim, Ozlem; Arslan, Hanife; Sönmezoǧlu, Savaş

    2016-12-01

    Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol-gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co2+ ions were observed to be substitutionally incorporated into Zn2+ sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  13. Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Gu J. H.

    2015-09-01

    Full Text Available Highly conductive gallium-doped zinc oxide (GZO transparent thin films were deposited on glass substrates by RF mag­netron sputtering. The deposited films were characterized by X-ray diffraction (XRD, X-ray photoelectron spectroscopy (XPS, four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystal­lographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400°C, which have the largest grain size (74.3 nm, the lowest electrical resistivity (1.31×10-3 Ω·cm and the maximum figure of merit (1.46×1O-2Ω-1, exhibit the best optoelectrical properties. Furthermore, the optical proper­ties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

  14. Synthesis and characterization of nickel oxide thin films deposited on glass substrates using spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Jlassi, M., E-mail: mohamedjlassilpv@yahoo.fr [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); Sta, I. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); Hajji, M. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); Ecole Nationale d’Electronique et des Communications de Sfax, Technopole de Sfax, BP 1163, CP 3021 (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia)

    2014-07-01

    A simple and inexpensive spray pyrolysis technique was employed to deposit nickel oxide (NiO) thin films from hydrated nickel chloride salt solution onto amorphous glass substrate. The as-deposited films were transparent, uniform and well adherent to the glass substrate. The effect of the substrate temperature, the volume and the concentration of the sprayed solution on the structural, optical and electrical properties was studied using X-ray diffraction, optical transmittance, four point probe, scanning electron microscopy and atomic force microscopy. The structural analyses show that all the samples have a cubic structure. It was found that the increase in the volume of sprayed solution leads to an increment in the crystallite size of NiO and improves the homogeneity of the film. Optical measurements have shown that an increase in the thickness of the layer results in a decrease in the optical transmission, but it remains higher than 70% even if the thickness exceeds 600 nm. At the same time, the optical gap decreases from 3.7 to 3.55 eV when the thickness increases from 133 to 620 nm. Low values of the electrical resistivity (less than 10 Ω cm) were obtained for thin films with thicknesses less than about 240 nm, but for higher thicknesses the resistivity increases linearly to reach about 170 Ω cm for a thickness of 620 nm.

  15. Flexible thin-film battery based on graphene-oxide embedded in solid polymer electrolyte

    Science.gov (United States)

    Kammoun, M.; Berg, S.; Ardebili, H.

    2015-10-01

    Enhanced safety of flexible batteries is an imperative objective due to the intimate interaction of such devices with human organs such as flexible batteries that are integrated with touch-screens or embedded in clothing or space suits. In this study, the fabrication and testing of a high performance thin-film Li-ion battery (LIB) is reported that is both flexible and relatively safer compared to the conventional electrolyte based batteries. The concept is facilitated by the use of solid polymer nanocomposite electrolyte, specifically, composed of polyethylene oxide (PEO) matrix and 1 wt% graphene oxide (GO) nanosheets. The flexible LIB exhibits a high maximum operating voltage of 4.9 V, high capacity of 0.13 mA h cm-2 and an energy density of 4.8 mW h cm-3. The battery is encapsulated using a simple lamination method that is economical and scalable. The laminated battery shows robust mechanical flexibility over 6000 bending cycles and excellent electrochemical performance in both flat and bent configurations. Finite element analysis (FEA) of the LIB provides critical insights into the evolution of mechanical stresses during lamination and bending.Enhanced safety of flexible batteries is an imperative objective due to the intimate interaction of such devices with human organs such as flexible batteries that are integrated with touch-screens or embedded in clothing or space suits. In this study, the fabrication and testing of a high performance thin-film Li-ion battery (LIB) is reported that is both flexible and relatively safer compared to the conventional electrolyte based batteries. The concept is facilitated by the use of solid polymer nanocomposite electrolyte, specifically, composed of polyethylene oxide (PEO) matrix and 1 wt% graphene oxide (GO) nanosheets. The flexible LIB exhibits a high maximum operating voltage of 4.9 V, high capacity of 0.13 mA h cm-2 and an energy density of 4.8 mW h cm-3. The battery is encapsulated using a simple lamination method

  16. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    Energy Technology Data Exchange (ETDEWEB)

    Baldi, G., E-mail: giacomo.baldi@cnr.it; Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Giusti, G.; Nozar, P.; Toccoli, T.; Verucchi, R. [IMEM-CNR Institute, Via alla Cascata 56/C, Povo – I-38123 Trento (Italy); Collini, C.; Lorenzelli, L. [FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento (Italy)

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  17. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    Science.gov (United States)

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  18. Nanosecond multi-pulse laser-induced damage mechanisms in pure and mixed oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Frank R., E-mail: frank.wagner@fresnel.fr; Gouldieff, Céline, E-mail: celine.gouldieff@univ-rennes1.fr; Natoli, Jean-Yves, E-mail: jean-yves.natoli@fresnel.fr; Commandré, Mireille, E-mail: mireille.commandre@fresnel.fr

    2015-10-01

    We report on nanosecond laser-induced damage of pure and mixed oxide thin films deposited by ion beam sputtering. Silica, hafnia and alumina as well as their binary mixtures have been tested in S-on-1 mode at 355 nm and 266 nm using a multiscale approach. The results were analyzed qualitatively to discuss the different fatigue behaviors observed. The absence of a multi-photon absorption step in the 1-on-1 damage thresholds as a function of the band gap indicates defect-mediated damage mechanisms. During the multi-pulse experiments we observed laser-induced defects that cause fatigue effects and preexisting low-density defects, which are insensitive to multiple pulse irradiation. Depending on material and beam size both types of defects (preexisting and light-induced) may contribute equally to the observed damage probability. Comparing the fatigue behavior of the mixtures to their constituting pure oxides, we found that, in general, the fatigue behavior of binary mixtures cannot be interpolated from the behaviors of the pure oxides. - Highlights: • Multi-pulse laser damage can be analyzed plotting damaging shot number vs. fluence. • A fatigue effect was only observed for small laser beams, avoiding worse precursors. • The fatigue behavior of a mixture cannot be interpolated from the pure oxides. • SiO{sub 2} and Al{sub 2}O{sub 3} damage at 266 nm is due to deterministic material modifications. • Hafnia multi-pulse laser damage with small beams is stochastic even at 266 nm.

  19. Controllable Electrochemical Synthesis of Reduced Graphene Oxide Thin-Film Constructed as Efficient Photoanode in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Soon Weng Chong

    2016-01-01

    Full Text Available A controllable electrochemical synthesis to convert reduced graphene oxide (rGO from graphite flakes was introduced and investigated in detail. Electrochemical reduction was used to prepare rGO because of its cost effectiveness, environmental friendliness, and ability to produce rGO thin films in industrial scale. This study aimed to determine the optimum applied potential for the electrochemical reduction. An applied voltage of 15 V successfully formed a uniformly coated rGO thin film, which significantly promoted effective electron transfer within dye-sensitized solar cells (DSSCs. Thus, DSSC performance improved. However, rGO thin films formed in voltages below or exceeding 15 V resulted in poor DSSC performance. This behavior was due to poor electron transfer within the rGO thin films caused by poor uniformity. These results revealed that DSSC constructed using 15 V rGO thin film exhibited high efficiency (η = 1.5211% attributed to its higher surface uniformity than other samples. The addition of natural lemon juice (pH ~ 2.3 to the electrolyte accelerated the deposition and strengthened the adhesion of rGO thin film onto fluorine-doped tin oxide (FTO glasses.

  20. Structural and optical properties of manganese oxide thin films deposited by pulsed laser deposition at different substrate temperatures

    Science.gov (United States)

    Jamil, H.; Khaleeq-ur-Rahman, M.; Dildar, I. M.; Shaukat, Saima

    2017-09-01

    We report the use of pulsed laser deposition (PLD) to grow manganese oxide thin films at a fixed low oxygen pressure at different temperatures on silicon (1 0 0) substrates. Structural properties of the thin films were examined using x-ray diffraction and Fourier transform infrared spectroscopy. Surface morphology and topography of the films was determined using atomic force microscopy and optical microscopy, while optical properties of the thin films were studied using spectroscopic ellipsometry. It was found that PLD is a convenient technique to deposit different phases of manganese oxide by tuning the deposition temperature. All measured physical properties such as morphology, topography, crystallite size, and optical band gap were clearly dependent on the substrate temperature chosen.

  1. Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2015-01-01

    Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

  2. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

    NARCIS (Netherlands)

    Nag, M.; Muller, R.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, A.; Gelinck, G.; Fukui, Y.; Groeseneken, G.; Heremans, P.

    2015-01-01

    We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

  3. Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

    NARCIS (Netherlands)

    Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

    2011-01-01

    Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for t

  4. Transport physics and device modeling of zinc oxide thin-film transistors. Pt. I: Long-channel devices

    NARCIS (Netherlands)

    Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Ferroni, M.; Federici, S.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

    2011-01-01

    Thin-film transistors (TFTs), which use zinc oxide (ZnO) as an active layer, were fabricated and investigated in detail. The transport properties of ZnO deposited by spray pyrolysis (SP) on a TFT structure are studied in a wide range of temperatures, electrical conditions (i.e., subthreshold, above-

  5. Partial oxidation of methanol on well-ordered V2O5(001)/Au(111) thin films

    NARCIS (Netherlands)

    Sturm, J. M.; Gobke, D.; Kuhlenbeck, H.; Dobler, J.; Reinhardt, U.; Ganduglia-Pirovano, M. V.; Sauer, J.; Freund, H. J.

    2009-01-01

    The partial oxidation of methanol to formaldehyde on well-ordered thin V2O5(001)films supported on Au(111) was studied. Temperature-programmed desorption shows that bulk-terminated surfaces are not reactive, whereas reduced surfaces produce formaldehyde. Formaldehyde desorption occurs between 400 K

  6. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

    Science.gov (United States)

    Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

    2013-11-01

    There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

  7. MOCVD of Cobalt Oxide Using Co-Actylacetonate As Precursor: Thin Film Deposition and Study of Physical Properties

    Directory of Open Access Journals (Sweden)

    S.M. Jogade

    2011-01-01

    Full Text Available Metal Organic Chemical Vapor Deposition (MOCVD is the deposition method of choice for achieving conformal uniform (composition and thickness continuous thin films over the micron geometry topology necessary for implementing advanced devices. Thin films of cobalt oxide were prepared by MOCVD technique on alumina substrate using a cobalt acetylacetonate as precursor. The thin films of cobalt oxide were deposited on alumina substrate by MOCVD at four different temperatures viz 490 °C, 515 °C, 535 °C, 565 °C. The as deposited samples are uniform and well adherent to the substrate. Thickness of the cobalt oxide film is maximum at temperature 535 °C. The crystalline and phase composition of films were examined by X-ray diffraction. The XRD reveals the crystalline nature with cubic in structure for all the samples. The surface morphology of the films were studied by scanning electron microscopy. The SEM image shows well defined closely packed grains for all the samples. The hexagonal shape of grains are observed for sample at temperature 515 °C. Raman spectroscopy shows Fm3m, 225 space groups for cobalt oxide thin films deposited on alumina substrate.

  8. An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

    NARCIS (Netherlands)

    Van Bui, H.; Wiggers, F.B.; Jong, de M.P.; Kovalgin, A.Y.

    2014-01-01

    We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes

  9. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

    Energy Technology Data Exchange (ETDEWEB)

    Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu [Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005 (United States); Sun, Nian X. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Kalkur, Thottam S. [Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918 (United States); Sbrockey, Nick M.; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, New Jersey 08854 (United States); Guo, Xiaomei [Boston Applied Technologies, Inc., Woburn, Massachusetts 01801 (United States); Chen, Chonglin [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Alpay, S. P.; Rossetti, G. A. [Institute of Materials Science and Materials Science and Engineering Program, University of Connecticut, Storrs, Connecticut 06269 (United States); Dayal, Kaushik [Mechanics, Materials and Computing, Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Chen, Long-Qing [Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802 (United States); Schlom, Darrell G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2013-11-21

    There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

  10. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell.

    Science.gov (United States)

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO(3)) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO(2)) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)(3)](PF(6))(2), [Co(pby)(3)](PF(6))(3), LiClO(4), and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO(3) as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff=56%) compared to ZnO working electrode (ff=40%) under the same condition.

  11. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell

    Science.gov (United States)

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO3) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO2) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)3](PF6)2, [Co(pby)3](PF6)3, LiClO4, and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO3 as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff = 56%) compared to ZnO working electrode (ff = 40%) under the same condition.

  12. Metal Oxide Thin Film Growth by Laser Ablation and Its Applications in High Surface Area Photoanodes

    Science.gov (United States)

    Ghosh, Rudresh

    Thin films are widely used in various applications, including but not limited to simple reflective coatings for mirrors, electrodes for lithium batteries, conducting substrates for electronic circuits, gas sensors and solar cells. As the scope of their applications has widened over the years so has the need to obtain different structural motifs for thin films. A large variety of fabrication techniques are commonly employed to obtain these structures. Pulsed laser deposition (PLD) can be used to obtain films varying from extremely compact and only a few angstroms thick to micron thick porous structures. In this dissertation I introduce a model for predicting different structures as a function of laser parameters and deposition environments in a pulsed laser deposition system. This is followed by a comparison of simulated and experimentally obtained structures. I then use this model to obtain tailored structures suited for individual applications. One of the unique structures obtained using the PLD consists of vertically-aligned structures with nanoparticles as their building blocks. I investigate the superiority of this unique structure over random nanoparticle networks as photoanodes for titanium dioxide (TiO 2)-based dye-sensitized solar cells (DSSC). UV-Vis studies show that there is a 1.4 x enhancement of surface area for PLD-TiO2 photoanodes compared to the best sol-gel films. PLD-TiO2 incident photon to current efficiency (IPCE) values are comparable to 3 x thicker sol-gel films and nearly 92% absorbed photon to current efficiency (APCE) values have been observed for optimized structures. I also examine the suitability of PLD-synthesized niobium oxide (Nb2O5) and tantalum-doped titanium oxide (Ta: TiO2) as photoanode materials. For optimized PLD-Nb2 O5 based DSSCs IPCE values up to 40%, APCE values around 90% and power conversion efficiency of 2.41% were obtained. DSSCs made of PLD-Ta:TiO2 show enhanced photocurrents as well photo efficiency over those based

  13. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, Herbert [Electronic Materials, PGI-7, Research Center Jülich, 52425 Jülich (Germany)

    2015-06-07

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating

  14. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    Science.gov (United States)

    Schroeder, Herbert

    2015-06-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current-electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current-electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F1/2) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current-electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide

  15. Modelling of the influence of charges trapped in the oxide on the I(Vg) characteristics of metal ultra-thin oxide semiconductor structures

    Science.gov (United States)

    Aziz, A.; Kassmi, K.; Kassmi, Ka; Olivie, F.

    2004-07-01

    This paper deals with the theoretical and experimental influences of the charge trapped in the oxide of metal/ultra-thin oxide/semiconductor structures. It focuses on the two characteristics current-voltage I(Vg) and voltage-charges injected Vg(Qinj) (Vg is the voltage applied, Qinj is the injected charge) when the conduction is of the Fowler-Nordheim type. The charge is trapped in the thin oxide after injection of a constant current at high field (>12 MV cm-1) from the metal (in accumulation regime: Vg position shifts exponentially towards the injecting electrode. These results enable us to draw conclusions on the instability of the trapped charge. Indeed the increase in the charges injected causes the movement of the charge centroid towards the cathode.

  16. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  17. Impact of Nanosize on Supercapacitance: Study of 1D Nanorods and 2D Thin-Films of Nickel Oxide.

    Science.gov (United States)

    Patil, Ranjit A; Chang, Cheng-Ping; Devan, Rupesh S; Liou, Yung; Ma, Yuan-Ron

    2016-04-20

    We synthesized unique one-dimensional (1D) nanorods and two-dimensional (2D) thin-films of NiO on indium-tin-oxide thin-films using a hot-filament metal-oxide vapor deposition technique. The 1D nanorods have an average width and length of ∼100 and ∼500 nm, respectively, and the densely packed 2D thin-films have an average thickness of ∼500 nm. The 1D nanorods perform as parallel units for charge storing. However, the 2D thin-films act as one single unit for charge storing. The 2D thin-films possess a high specific capacitance of ∼746 F/g compared to 1D nanorods (∼230 F/g) using galvanostatic charge-discharge measurements at a current density of 3 A/g. Because the 1D NiO nanorods provide more plentiful surface areas than those of the 2D thin-films, they are fully active at the first few cycles. However, the capacitance retention of the 1D nanorods decays faster than that of the 2D thin-films. Also, the 1D NiO nanorods suffer from instability due to the fast electrochemical dissolution and high nanocontact resistance. Electrochemical impedance spectroscopy verifies that the low dimensionality of the 1D NiO nanorods induces the unavoidable effects that lead them to have poor supercapacitive performances. On the other hand, the slow electrochemical dissolution and small contact resistance in the 2D NiO thin-films favor to achieve high specific capacitance and great stability.

  18. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

    Science.gov (United States)

    Jeong, Jae Kyeong; Jeong, Jong Han; Yang, Hui Won; Park, Jin-Seong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-09-01

    The authors report the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide (a-IGZO) channel, which was deposited by cosputtering using a dual IGZO and indium zinc oxide (IZO) target. The effect of the indium content on the device performance of the a-IGZO TFTs was investigated. At a relatively low IZO power of 400W, the field-effect mobility (μFE) and subthreshold gate swing (S) of the a-IGZO TFTs were dramatically improved to 19.3cm2/Vs and 0.35V/decade, respectively, compared to those (11.2cm2/Vs and 1.11V/decade) for the TFTs with the a-IGZO channel (reference sample) prepared using only the IGZO target. The enhancement in the subthreshold IDS-VGS characteristics at an IZO power of 400W compared to those of the reference sample was attributed to the reduction of the interface trap density rather than the reduction of the bulk defects of the a-IGZO channel.

  19. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  20. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh; Kurt Montgomery

    2004-10-01

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

  1. Atmospheric pressure plasma jet-synthesized electrochromic organomolybdenum oxide thin films for flexible electrochromic devices

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yung-Sen, E-mail: yslin@fcu.edu.tw; Tsai, Tsung-Hsien; Tien, Shih-Wei

    2013-02-01

    An investigation is conducted into fast synthesis of electrochromic organomolybdenum oxide (MoO{sub x}C{sub y}) thin films onto 40 Ω/□ flexible polyethylene terephthalate/indium tin oxide substrates via atmospheric pressure plasma jet. A precursor [molybdenum carbonyl, Mo(CO){sub 6}] vapor, carried by argon gas, is injected into air plasma torch to synthesize MoO{sub x}C{sub y} films for offering extraordinary electrochromic performance. Only low driving voltages from − 1 V to 1 V are needed to offer reversible Li{sup +} ion intercalation and deintercalation in a 1 M LiClO{sub 4}-propylene carbonate electrolyte. Light modulation with transmittance variation of up to 61%, optical density change of 0.54 and coloration efficiency of 37.5 cm{sup 2}/C at a wavelength of 550 nm after 200 cycles of cyclic voltammetry switching measurements is achieved. - Highlights: ► Fast deposition of MoO{sub x}C{sub y} film by an atmospheric pressure plasma jet ► Organic–inorganic hybrid MoO{sub x}C{sub y} films synthesized ► Flexible and electrochromic MoO{sub x}C{sub y} films produced.

  2. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    Science.gov (United States)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  3. Thin film zinc oxide gas sensor fabricated using near-field electrospray

    Directory of Open Access Journals (Sweden)

    Gaofeng Zheng

    2016-12-01

    Full Text Available Near-field electrospray was used to deposit zinc acetate precursor particles over comb electrodes. These particles were heated and oxidized to form a zinc oxide (ZnO semiconductor at 500 °C. The resulting ZnO thin film on the comb electrode was incorporated into a gas sensor, which was examined using a custom built measurement system. The current that was measured through the electrodes was used to calculate the resistance of the ZnO between the fingers of the comb electrode. The resistance decreased as the sensor was exposed to the target gas of ethanol, while the sensing response (R0/Rg increased at higher concentrations of target gas. The ZnO sensor displayed high sensitivity because of the small diameters and high specific surface area of the electrospray particles. The ZnO sensors show great promise for use as micro/nano gas sensors as they exhibit high sensitivity, repeatability and stability.

  4. Direct patterning of gold oxide thin films by focused ion-beam irradiation

    Science.gov (United States)

    Machalett, F.; Edinger, K.; Melngailis, J.; Diegel, M.; Steenbeck, K.; Steinbeiss, E.

    For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar+ laser beam and a 30 keV Ga+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 μm) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuOx (130-150 °C). For smaller dimensions (100 nm to 10 μm) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5×107 Ω/□ to approximately 6 Ω/□). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) investigations, indicate that the FIB patterning in the low-dose region (1014 Ga+/cm2) is combined with a volume reduction, which is caused by oxygen escape rather than by sputtering.

  5. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

    Science.gov (United States)

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-05-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

  6. Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Tao; Jiang Ya-Dong; Yu He; Wu Zhi-Ming; Zhao He-Nan

    2011-01-01

    This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The presputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

  7. Titanium oxide nanocoating on a titanium thin film deposited on a glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kotsedi, L., E-mail: kotsedi@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS, National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape (South Africa); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS, National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape (South Africa); Eaton, S.M. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Cummings, F.R. [University of the Western Cape, Electron Microscopy Unit, Physics Department, Bellville 7535, Cape Town (South Africa); Turco, S. Lo; Ntwaeaborwa, O.M. [Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Milano, Italy Via Giovanni Pascoli, 70/3, 20133 Milano (Italy); Ramponi, R. [Institute for Photonics and Nanotechnologies (IFN)-CNR, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Maaza, M. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS, National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape (South Africa)

    2016-03-31

    Thin films of titanium were deposited on a glass substrate using electron beam evaporator. Femtosecond laser pulses were focused on the surface of the films, and the samples were scanned while mounted on the motorized computer-controlled motion stage to produce an areal modification of the films. X-ray diffraction of the laser-patterned samples showed evidence of the formation of a γ-Ti{sub 3}O{sub 5} with a monoclinic phase. Rutherford backscattering spectrometry simulation showed that there is an increase in the oxygen concentration as the average laser fluence is increased. Time of flight secondary ions mass spectrometry analysis showed an even distribution of the titanium and oxygen ions on the sample and also ionized molecules of the oxides of titanium were observed. The formation of the oxide of titanium was further supported using the UV–Vis-NIR spectroscopy, which showed that for 0.1 J/cm{sup 2} fluence, the laser-exposed film showed the electron transfer band and the d–d transition peak of titanium was observed at lower wavelengths. - Highlights: • γ-Ti{sub 3}O{sub 5} formed using femtosecond laser. • Fluence and oxygen relation were studied. • Nanoflakes of γ-Ti{sub 3}O{sub 5} were observed under HRSEM.

  8. Reduced graphene oxide/molecular imprinted polymer-organic thin film transistor for amino acid detection

    Science.gov (United States)

    Halim, Nurul Farhanah AB.; Musa, Nur Hazwani; Zakaria, Zulkhairi; Von Schleusingen, Mubaraq; Ahmad, Mohd Noor; Derman, Nazree; Shakaff, Ali Yeon Md.

    2017-03-01

    This works reports the electrical performance of reduced graphene oxide (RGO)/Molecular imprinted polymer (MIP)- organic thin film transistor (OTFT) for amino-acid detection, serine. These biomimetic sensors consider MIP as man-tailored biomimetic recognition sites that play an important role in signal transduction. MIP provides recognition sites compatible with serine molecules was developed by dispersing serine with methylacrylate acid (MAA) as functional monomer and Ethylene glycol dimethylacrylate (EGDMA) as cross-linker. The imprinted polymeric were mixed with reduced graphene oxide to produced sensing layer for the sensor. RGO-MIP layer was introduced between source and drain of OTFT via spin coating as a detecting layer for serine molecules. RGO was introduced into MIP, to allow a highly conductive sensing material thus enhanced selectivity and sensitivity of the sensor. By analyzing the electrical performance of the sensors, the performances of OTFT sensor enhanced with RGO/MIP interlayer and OTFT sensor with MIP interlayer when exposed to serine analyte were obtained. The results showed that there were remarkable shifts of drain current (ID) obtained from OTFT sensor with RGO/MIP interlayer after exposed to serine analyte. Moreover, the sensitivity of OTFT sensor with RGO/MIP interlayer was nearly higher than the OTFT sensor with MIP interlayer. Hence, it proved that RGO successfully enhanced the sensing performance of OTFT sensor.

  9. Transparent thin films of Cu-TiO2 with visible light photocatalytic activity.

    Science.gov (United States)

    Janczarek, Marcin; Zielińska-Jurek, Anna; Markowska, Irmina; Hupka, Jan

    2015-03-01

    Thin films of Cu-TiO2 with a high level of transparency were prepared by a dip-coating procedure on the glass surface. CuCl2 was used as a copper precursor added during sol-gel synthesis of TiO2. The extension of optical absorption into the visible region of as-prepared thin films was indicated by UV/Vis spectroscopy. Only the anatase phase was detected by X-ray diffraction analysis (XRD). The presence of copper in the structure of thin films was confirmed by energy dispersive X-ray spectrometry (EDS). The significant rate of phenol and 4-chlorophenol mineralization was observed during visible light irradiation. The photocatalytic activity of the prepared thin films is correlated with the optimum copper content in the structure. Copper in metallic form and cupric oxides were not detected by XRD and scanning electron microscopy analysis. It is suggested that copper may exist as dispersed ions in the TiO2 lattice.

  10. Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin

    Energy Technology Data Exchange (ETDEWEB)

    Brinzari, V., E-mail: vbrinzari@mail.ru [State University of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of); Damaskin, I. [Academy of Science of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of); Trakhtenberg, L. [Semenov Institute of Chemical Physics, Moscow (Russian Federation); Moscow Institute of Physics and Technology, Moscow Region, Dolgoprudny (Russian Federation); Cho, B.K. [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Korotcenkov, G., E-mail: ghkoro@yahoo.com [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of)

    2014-02-03

    The search for materials with thermoelectric parameters capable of operating at high temperatures continues to be of great interest; n-type metal oxides are promising candidates. Here, two series of thin (∼ 100 nm) indium oxide films doped by tin (from 0 to 50 at.%) were deposited by spray pyrolysis at 350 °C and 450 °C. Characterization of the films was performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Thermoelectric properties, i.e., the conductivity and the Seebeck coefficient, were then studied over a temperature range of 20–450 °C. It was shown that these parameters as well as their nanostructure were strongly dependent on the Sn content and deposition temperature. Specifically, the conductivity had maxima near 5% and 20% for films deposited at 350 °C and 450 °C, respectively. The power factor (PF) as a function of Sn content also demonstrated non-monotonous behavior with two maxima; for films deposited at 350 °C these maxima were again observed near 5% and 20% of Sn content. The maximal PF value equaled to 4.7 mW/(m·K{sup 2}) at a temperature of 450 °C was observed at 5 at.% Sn. This result is one of the best ever obtained for metal oxides in a given temperature range. The optimal films were characterized by a cubic-like crystallite nanostructure with {400} surface faceting. A model explaining such high parameters was subsequently proposed. We also determined the effect of ambient humidity on the thermoelectric properties of nanostructured In{sub 2}O{sub 3}:Sn films at an operating temperature range below 400 °C, which is caused by the change of surface conductivity under the influence of water vapor. - Highlights: • ITO thin films with Sn amount up to 50 at.% were deposited by spray pyrolysis method. • Nanostructure and thermoelectric properties strongly depend on Sn content. • Best films provide relatively high thermopower and large power factor at 450 °C. • Such films consist of cubic

  11. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    , ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

  12. Interfacial effects in oxide-polymer laminar composite thin film dielectrics for capacitor applications

    Science.gov (United States)

    Tewari, Pratyush

    Continuous increase in the density of active components on microelectronic chip/circuit board requires development of new capacitors with smaller size, weight and cost. Miniaturization in the size of capacitors demands development of high energy density dielectric materials, which are the core of parallel plate capacitors. Nano composite dielectrics comprising high polarizibility oxide fillers randomly dispersed in high breakdown strength polymer matrix are considered as a potential high energy density materials for capacitor applications. Large interfacial volume, generated due to introduction of nano fillers in polymer matrix, might have significant positive contribution towards energy storage in nano composites. However, percolation issues associated with nano fillers and generation of large interfacial volume in nano composites, where complex electric field distribution overlaps with interfacialy modified polymer lead to unclear understanding of polymer-filler interfacial interactions in nano composites. Hence, in the current work laminar composite double layered dielectric structures, which provide relatively simple local field distribution at the interface and ideal series connectivity between oxide and polymer, are used as a model system to understand polymer-oxide interfacial interactions. Interfacial effects are reported for both low permittivity (SiO2-Parylene C) and medium permittivity (ZrO2-P(VDF-TrFE)) laminar composite dielectrics. Pyrolytic vapor decomposition polymerization process was used to grow Parylene C thin films on gold and thermally grown SiO2 surfaces. Enhancement in crystallite dimension with post deposition annealing treatments of Parylene C thin films was found to reduce dielectric loss tangent and hence enhance its dielectric properties. Electric field and temperature dependant leakage current analysis suggested hopping as dominant conduction mechanism in Parylene C thin films. Parylene C thin films in laminar composites showed

  13. Excimer laser assisted re-oxidation of BaTiO{sub 3} thin films on Ni metal foils

    Energy Technology Data Exchange (ETDEWEB)

    Bharadwaja, S. S. N., E-mail: s.s.n.bharadwaja@gmail.com; Ko, S. W.; Qu, W.; Clark, T. [Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rajashekhar, A. [Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Motyka, M. [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Podraza, N. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, Ohio 43606 (United States); Randall, C. A.; Trolier-McKinstry, S. [Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-01-14

    Excimer laser assisted re-oxidation for reduced, crystallized BaTiO{sub 3} thin films on Ni-foils was investigated. It was found that the BaTiO{sub 3} can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO{sub x} interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV{sub rms} excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO{sub 3} thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO{sub x} formation between the BaTiO{sub 3} and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001]{sub C} and [111]{sub C} BaTiO{sub 3} single crystals indicate that the re-oxidation of BaTiO{sub 3} single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients.

  14. Cupric ion reducing antioxidant capacity assay for food antioxidants: vitamins, polyphenolics, and flavonoids in food extracts.

    Science.gov (United States)

    Apak, Reşat; Güçlü, Kubilay; Ozyürek, Mustafa; Bektas Oğlu, Burcu; Bener, Mustafa

    2008-01-01

    Antioxidants are health beneficial compounds through their combat with reactive oxygen and nitrogen species and free radicals that may cause tissue damage leading to various diseases. This work reports the development of a simple and widely applicable antioxidant capacity index for dietary polyphenols, vitamins C and E, and plasma antioxidants utilizing the copper(II)-neocuproine (Cu(II)-Nc) reagent as the chromogenic oxidizing agent. This novel method based on an electron-transfer mechanism was named by our research group as 'cupric reducing antioxidant capacity', abbreviated as the CUPRAC method. The method is comprised of mixing the antioxidant solution with aqueous copper(II) chloride, alcoholic neocuproine, and ammonium acetate aqueous buffer at pH 7, and subsequently measuring the developed absorbance at 450 nm after 30 min. Since the color development is fast for compounds like ascorbic acid, gallic acid, and quercetin but slow for naringin and naringenin, the latter compounds are assayed after incubation at 50 degrees C on a water bath for 20 min. The flavonoid glycosides are hydrolyzed to their corresponding aglycones by refluxing in 1.2 M: HCl-containing 50% MeOH so as to exert maximal reducing power towards Cu(II)-Nc. The CUPRAC antioxidant capacities of synthetic mixtures are equal to the sum of individual capacities of antioxidant constituents, indicating lack of chemical deviations from Beer's law. Tests on antioxidant polyphenols demonstrate that the highest CUPRAC capacities are observed for epicatechin gallate, epigallocatechin gallate, quercetin, fisetin, epigallocatechin, catechin, and caffeic acid in this order, in accord with the number and position of the -OH groups as well the conjugation level of the molecule. The parallelism of the linear calibration curves of pure antioxidants in water and in a given complex matrix (plant extract) demonstrates that there are no chemical interactions of interferent nature among the solution constituents

  15. Effect of nitrogen ion implantation on the structural and optical properties of indium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Aziz, Anver; Siddiqui, Azher M., E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India); Kumar, Pravin [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi-110067 (India); Khan, Sameen Ahmed [Department of Mathematics and Sciences, College of Arts and Applied Sciences (CAAS) Dhofar University, Salalah, Sultanate of Oman (Oman)

    2016-06-10

    : We report here synthesis and subsequent nitrogen ion implantation of indium oxide (In{sub 2}O{sub 3}) thin films. The films were implanted with 25 keV N{sup +} beam for different ion doses between 3E15 to 1E16 ions/cm{sup 2}. The resulting changes in structural and optical properties were investigated using XRD, SEM-EDAX and UV-Vis Spectrometry. XRD studies reveal decrease in crystallite size from 20.06 to 12.42 nm with increase in ion dose. SEM micrographs show an increase in the grain size from 0.8 to 1.35 µm with increase in ion dose because of the agglomeration of the grains. Also, from EDAX data on pristine and N-implanted thin films the presence of indium and oxygen without any traces of impurity elements could be seen. However, at lower ion doses such as 3E15 and 5E15 ions/cm{sup 2}, no evidence of the presence of nitrogen ion was seen. However, for the ion dose of 1E16 ions/cm{sup 2}, evidence of presence of nitrogen can be seen in the EDAX data. Band gap calculations reveal a decrease in band gap from 3.54 to 3.38 eV with increasing ion dose. However, the band gap was found to again show an increase to 3.58 eV at the highest ion dose owing to quantum confinement effect.

  16. Spectral and angular-selective thermal emission from gallium-doped zinc oxide thin film structures

    Science.gov (United States)

    Sakr, Enas; Bermel, Peter

    2017-02-01

    Simultaneously controlling both the spectral and angular emission of thermal photons can qualitatively change the nature of thermal radiation, and offers a great potential to improve a broad range of applications, including infrared light sources and thermophotovoltaic (TPV) conversion of waste heat to electricity. For TPV in particular, frequency-selective emission is necessary for spectral matching with a photovoltaic converter, while directional emission is needed to maximize the fraction of emission reaching the receiver at large separation distances. This can allow the photovoltaics to be moved outside vacuum encapsulation. In this work, we demonstrate both directionally and spectrally-selective thermal emission for p-polarization, using a combination of an epsilon-near-zero (ENZ) thin film backed by a metal reflector, a high contrast grating, and an omnidirectional mirror. Gallium-doped zinc oxide is selected as an ENZ material, with cross-over frequency in the near-infrared. The proposed structure relies on coupling guided modes (instead of plasmonic modes) to the ENZ thin film using the high contrast grating. The angular width is thus controlled by the choice of grating period. Other off-directional modes are then filtered out using the omnidirectional mirror, thus enhancing frequency selectivity. Our emitter design maintains both a high view factor and high frequency selectivity, leading to a factor of 8.85 enhancement over a typical blackbody emitter, through a combination of a 22.26% increase in view factor and a 6.88x enhancement in frequency selectivity. This calculation assumes a PV converter five widths away from the same width emitter in 2D at 1573 K.

  17. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Michael, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2015-08-14

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru{sup 0}) and its oxide (RuO{sub 2}) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru{sup 0} and RuO{sub 2} films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO{sub 2} and 0.04 Å/cycle for Ru.{sup 0} An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO{sub 2}/OH compound whose surface is saturated with hydroxyl groups.

  18. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    OpenAIRE

    M. Marikkannan; V. Vishnukanthan; A. Vijayshankar; Mayandi, J.; Pearce, J M

    2015-01-01

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force micros...

  19. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors.

    Science.gov (United States)

    Nayak, Pradipta K; Hedhili, Mohamed N; Cha, Dongkyu; Alshareef, H N

    2013-05-01

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility-5.6 cm(2) V(-1) s(-1) with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 10(8)-was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing.

  20. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.