Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reaction

Science.gov (United States)

Kotadia, H. R.; Panneerselvam, A.; Mokhtari, O.; Green, M. A.; Mannan, S. H.

2012-04-01

The interfacial intermetallic compound (IMC) formation between Cu substrate and Sn-3.8Ag-0.7Cu-X (wt.%) solder alloys has been studied, where X consists of 0-5% Zn or 0-2% Al. The study has focused on the effect of solder volume as well as the Zn or Al concentration. With low solder volume, when the Zn and Al concentrations in the solder are also low, the initial Cu-Zn and Al-Cu IMC layers, which form at the solder/substrate interface, are not stable and spall off, displaced by a Cu6Sn5 IMC layer. As the total Zn or Al content in the system increases by increasing solder volume, stable CuZn or Al2Cu IMCs form on the substrate and are not displaced. Increasing concentration of Zn has a similar effect of stabilizing the Cu-Zn IMC layer and also of forming a stable Cu5Zn8 layer, but increasing Al concentration alone does not prevent spalling of Al2Cu. These results are explained using a combination of thermodynamic- and kinetics-based arguments.

Nucleation and Growth of Cu-Al Intermetallics in Al-Modified Sn-Cu and Sn-Ag-Cu Lead-Free Solder Alloys

Science.gov (United States)

Reeve, Kathlene N.; Anderson, Iver E.; Handwerker, Carol A.

2015-03-01

Lead-free solder alloys Sn-Cu (SC) and Sn-Ag-Cu (SAC) are widely used by the microelectronics industry, but enhanced control of the microstructure is needed to improve solder performance. For such control, nucleation and stability of Cu-Al intermetallic compound (IMC) solidification catalysts were investigated by variation of the Cu (0.7-3.0 wt.%) and Al (0.0-0.4 wt.%) content of SC + Al and SAC + Al alloys, and of SAC + Al ball-grid array (BGA) solder joints. All of the Al-modified alloys produced Cu-Al IMC particles with different morphologies and phases (occasionally non-equilibrium phases). A trend of increasing Cu-Al IMC volume fraction with increasing Al content was established. Because of solidification of non-equilibrium phases in wire alloy structures, differential scanning calorimetry (DSC) experiments revealed delayed, non-equilibrium melting at high temperatures related to quenched-in Cu-Al phases; a final liquidus of 960-1200°C was recorded. During cooling from 1200°C, the DSC samples had the solidification behavior expected from thermodynamic equilibrium calculations. Solidification of the ternary alloys commenced with formation of ternary β and Cu-Al δ phases at 450-550°C; this was followed by β-Sn, and, finally, Cu6Sn5 and Cu-Al γ1. Because of the presence of the retained, high-temperature phases in the alloys, particle size and volume fraction of the room temperature Cu-Al IMC phases were observed to increase when the alloy casting temperature was reduced from 1200°C to 800°C, even though both temperatures are above the calculated liquidus temperature of the alloys. Preliminary electron backscatter diffraction results seemed to show Sn grain refinement in the SAC + Al BGA alloy.

The complex structure of liquid Cu{sub 6}Sn{sub 5} alloy

Energy Technology Data Exchange (ETDEWEB)

Qin Jingyu; Gu Tingkun; Bian Xiufang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Southern Campus, Jinan 250061 (China); Liu Hui [Shandong High Performance Computing Center, Shandong University, Southern Campus, Jinan 250061 (China)

2009-04-15

By applying ab initio molecular dynamics simulation to liquid Cu{sub 6}Sn{sub 5} alloy, the hetero-coordination tendency is discovered by Bathia-Thornton partial correlation functions and a chemical short-range parameter. However the local structural environment of Sn in l-Cu{sub 6}Sn{sub 5} alloy resembles that of liquid Sn by Voronoi analysis. A new feature, i.e. a subpeak in between the first and second peaks, is discovered by the present method which implies that topologically disordered {beta}-Sn-type structural units may exist in l-Cu{sub 6}Sn{sub 5} alloy. The local density states of electrons show that both Cu-Sn and Sn-Sn bonding exist in l-Cu{sub 6}Sn{sub 5} alloy. This work suggests that chemical short-range order between unlike atoms and self-coordination between Sn atoms coexists in l-Cu{sub 6}Sn{sub 5} alloy.

Soldering Characteristics and Mechanical Properties of Sn-1.0Ag-0.5Cu Solder with Minor Aluminum Addition

Directory of Open Access Journals (Sweden)

Yee Mei Leong

2016-06-01

Full Text Available Driven by the trends towards miniaturization in lead free electronic products, researchers are putting immense efforts to improve the properties and reliabilities of Sn based solders. Recently, much interest has been shown on low silver (Ag content solder SAC105 (Sn-1.0Ag-0.5Cu because of economic reasons and improvement of impact resistance as compared to SAC305 (Sn-3.0Ag-0.5Cu. The present work investigates the effect of minor aluminum (Al addition (0.1–0.5 wt.% to SAC105 on the interfacial structure between solder and copper substrate during reflow. The addition of minor Al promoted formation of small, equiaxed Cu-Al particle, which are identified as Cu3Al2. Cu3Al2 resided at the near surface/edges of the solder and exhibited higher hardness and modulus. Results show that the minor addition of Al does not alter the morphology of the interfacial intermetallic compounds, but they substantially suppress the growth of the interfacial Cu6Sn5 intermetallic compound (IMC after reflow. During isothermal aging, minor alloying Al has reduced the thickness of interfacial Cu6Sn5 IMC but has no significant effect on the thickness of Cu3Sn. It is suggested that of atoms of Al exert their influence by hindering the flow of reacting species at the interface.

Soldering Characteristics and Mechanical Properties of Sn-1.0Ag-0.5Cu Solder with Minor Aluminum Addition

Science.gov (United States)

Leong, Yee Mei; Haseeb, A.S.M.A.

2016-01-01

Driven by the trends towards miniaturization in lead free electronic products, researchers are putting immense efforts to improve the properties and reliabilities of Sn based solders. Recently, much interest has been shown on low silver (Ag) content solder SAC105 (Sn-1.0Ag-0.5Cu) because of economic reasons and improvement of impact resistance as compared to SAC305 (Sn-3.0Ag-0.5Cu. The present work investigates the effect of minor aluminum (Al) addition (0.1–0.5 wt.%) to SAC105 on the interfacial structure between solder and copper substrate during reflow. The addition of minor Al promoted formation of small, equiaxed Cu-Al particle, which are identified as Cu3Al2. Cu3Al2 resided at the near surface/edges of the solder and exhibited higher hardness and modulus. Results show that the minor addition of Al does not alter the morphology of the interfacial intermetallic compounds, but they substantially suppress the growth of the interfacial Cu6Sn5 intermetallic compound (IMC) after reflow. During isothermal aging, minor alloying Al has reduced the thickness of interfacial Cu6Sn5 IMC but has no significant effect on the thickness of Cu3Sn. It is suggested that of atoms of Al exert their influence by hindering the flow of reacting species at the interface. PMID:28773645

Comparative Study of ENIG and ENEPIG as Surface Finishes for a Sn-Ag-Cu Solder Joint

Science.gov (United States)

Yoon, Jeong-Won; Noh, Bo-In; Jung, Seung-Boo

2011-09-01

Interfacial reactions and joint reliability of Sn-3.0Ag-0.5Cu solder with two different surface finishes, electroless nickel-immersion gold (ENIG) and electroless nickel-electroless palladium-immersion gold (ENEPIG), were evaluated during a reflow process. We first compared the interfacial reactions of the two solder joints and also successfully revealed a connection between the interfacial reaction behavior and mechanical reliability. The Sn-Ag-Cu/ENIG joint exhibited a higher intermetallic compound (IMC) growth rate and a higher consumption rate of the Ni(P) layer than the Sn-Ag-Cu/ENEPIG joint. The presence of the Pd layer in the ENEPIG suppressed the growth of the interfacial IMC layer and the consumption of the Ni(P) layer, resulting in the superior interfacial stability of the solder joint. The shear test results show that the ENIG joint fractured along the interface, exhibiting indications of brittle failure possibly due to the brittle IMC layer. In contrast, the failure of the ENEPIG joint only went through the bulk solder, supporting the idea that the interface is mechanically reliable. The results from this study confirm that the Sn-Ag-Cu/ENEPIG solder joint is mechanically robust and, thus, the combination is a viable option for a Pb-free package system.

Kinetics of the polymorphic phase transformation of Cu6Sn5

International Nuclear Information System (INIS)

Zeng, Guang; McDonald, Stuart D.; Read, Jonathan J.; Gu, Qinfen; Nogita, Kazuhiro

2014-01-01

Cu 6 Sn 5 is a critical intermetallic compound in soldering and three-dimensional integrated circuit packaging technology and exists in at least five different crystal structures in the solid state, with a polymorphic phase transformation from hexagonal to monoclinic structures occurring on cooling. The kinetics of polymorphic transformations in Sn-rich Cu 6 Sn 5 and Cu-rich Cu 6 Sn 5 is systematically investigated in this study. This includes the generation of continuous cooling transformation diagrams as well as time–temperature transformation diagrams. Techniques used include variable temperature synchrotron powder X-ray diffraction and differential scanning calorimetry. The findings have important implications for the manufacture of solder joints and their in-service performance

Effect of Joint Scale and Processing on the Fracture of Sn-3Ag-0.5Cu Solder Joints: Application to Micro-bumps in 3D Packages

Science.gov (United States)

Talebanpour, B.; Huang, Z.; Chen, Z.; Dutta, I.

2016-01-01

In 3-dimensional (3D) packages, a stack of dies is vertically connected to each other using through-silicon vias and very thin solder micro-bumps. The thinness of the micro-bumps results in joints with a very high volumetric proportion of intermetallic compounds (IMCs), rendering them much more brittle compared to conventional joints. Because of this, the reliability of micro-bumps, and the dependence thereof on the proportion of IMC in the joint, is of substantial concern. In this paper, the growth kinetics of IMCs in thin Sn-3Ag-0.5Cu joints attached to Cu substrates were analyzed, and empirical kinetic laws for the growth of Cu6Sn5 and Cu3Sn in thin joints were obtained. Modified compact mixed mode fracture mechanics samples, with adhesive solder joints between massive Cu substrates, having similar thickness and IMC content as actual micro-bumps, were produced. The effects of IMC proportion and strain rate on fracture toughness and mechanisms were investigated. It was found that the fracture toughness G C decreased with decreasing joint thickness ( h Joint). In addition, the fracture toughness decreased with increasing strain rate. Aging also promoted alternation of the crack path between the two joint-substrate interfaces, possibly proffering a mechanism to enhance fracture toughness.

Systematics of Structural, Phase Stability, and Cohesive Properties of η'-Cu6(Sn,In)5 Compounds Occurring in In-Sn/Cu Solder Joints

Science.gov (United States)

Ramos, S. B.; González Lemus, N. V.; Deluque Toro, C. E.; Cabeza, G. F.; Fernández Guillermet, A.

2017-07-01

Motivated by the high solubility of In in ( mC44) η'-Cu6Sn5 compound as well as the occurrence of an In-doped η'-intermetallic in the microstructure of Cu/In-Sn/Cu solder joints, a theoretical study has been carried out to investigate the various physical effects of incorporating In at Sn Wyckoff sites of the binary η'-phase. Systematic ab initio calculations using the projected augmented wave method and Vienna Ab initio Simulation Package were used to determine the composition dependence of the structural and cohesive properties of η'-Cu6(Sn,In)5 compounds, compared with those expected from the binary end-member compounds Cu6Sn5 and Cu6In5. The molar volume shows significant deviations from Vegard's law. The predicted composition dependence of the cohesive properties is discussed using two complementary approaches, viz. a valence-electron density approach as well as a bond-number approach, both accounting for the roughly linear dependence of the cohesive energy on the In content. A microscopic interpretation for this general trend is given in terms of the key contributions to chemical bonding in this class of compounds, namely Cu d-electron overlap and hybridization of Cu d-states with In and Sn p-electron states. Moreover, a crystallographic site approach is developed to accurately establish the phase-stabilizing effect of incorporating In at specific Wyckoff positions of the ( mC44) η'-Cu6Sn5 structure.

Effect of Intermetallic on Electromigration and Atomic Diffusion in Cu/SnAg3.0Cu0.5/Cu Joints: Experimental and First-Principles Study

Science.gov (United States)

Zhou, Wei; Liu, Lijuan; Li, Baoling; Wu, Ping

2009-06-01

Electromigration phenomena in a one-dimensional Cu/SnAg3.0Cu0.5/Cu joint were investigated with current stressing. The special effect of intermetallic compound (IMC) layers on the formation of serious electromigration damage induced by nonuniform current density distribution was discussed based on experimental results. Meanwhile, hillocks were observed both at the anode and near the cathode of the joint, and they were described as the result of diffusion of atoms and compressive stress released along grain boundaries to the relatively free surface. Moreover, the diffusion behavior of Cu at the cathode was analyzed with the electromigration equation, and the stability of Ag atoms in the solder during electromigration was evaluated with a first-principles method.

Interfacial microstructures and solder joint strengths of the Sn-8Zn-3Bi and Sn-9Zn-lAl Pb-free solder pastes on OSP finished printed circuit boards

Energy Technology Data Exchange (ETDEWEB)

Lin, C.-T. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miaoli 36003, Taiwan (China); Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Section 4, Chung-Hsing Road, Chutung, Hsinchu 31040, Taiwan (China); Hsi, C.-S. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miaoli 36003, Taiwan (China); Wang, M.-C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan (China)], E-mail: mcwang@kmu.edu.tw; Chang, T.-C.; Liang, M.-K. [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Section 4, Chung-Hsing Road, Chutung, Hsinchu 31040, Taiwan (China)

2008-07-14

Two kinds of lead-free solders, Sn-8Zn-3Bi and Sn-9Zn-lAl, were used to mount passive components onto printed circuit boards via a re-flow soldering process. The samples were stored at 150 deg. C for 200, 400, 600, 800, and 1100 h. The microstructures of the samples after aged at 150 deg. C for various times were characterized using optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and the analyzed of solder joint shear strengths. The joint strength between Sn-8Zn-3Bi and Cu pad was about 4.0 {+-} 0.3 kg, while the strength between Sn-9Zn-lAl and Cu pad had values of 2.6 {+-} 0.1 kg. Both kinds of solder joints exhibited reduced strengths with increasing aging times. After aging at 150 deg. C for 1100 h, the joints strengths of Sn-8Zn-3Bi and Sn-9Zn-lAl were 1.8 {+-} 0.3 and 1.7 {+-} 0.3 kg, respectively. Both the Sn-8Zn-3Bi and Sn-9Zn-lAl joints showed brittle fracture behaviors. A flat layer of Cu{sub 5}Zn{sub 8} intermetallic compound (IMC) was formed between Sn-8Zn-3Bi solder and Cu pad after reflow. When the aging time was increased to 400 h, Zn-depletion and formation of Cu{sub 6}Sn{sub 5} IMC were observed in the solders due to the interaction between the tin and zinc compounds. The interaction between Sn-9Zn-lAl solder and Cu pad had similar behavior, however, Cu{sub 6}Sn{sub 5} IMC formed in Sn-9Zn-lAl solder when after aging at 150 deg. C for 600 h. As the aging time increased, both types of solders generated clear IMC spalling layers with large and continuous voids. Those voids substantially decreased the joint strength.

Continuous epitaxial growth of extremely strong Cu6Sn5 textures at liquid-Sn/(111)Cu interface under temperature gradient

Science.gov (United States)

Zhong, Y.; Zhao, N.; Liu, C. Y.; Dong, W.; Qiao, Y. Y.; Wang, Y. P.; Ma, H. T.

2017-11-01

As the diameter of solder interconnects in three-dimensional integrated circuits (3D ICs) downsizes to several microns, how to achieve a uniform microstructure with thousands of interconnects on stacking chips becomes a critical issue in 3D IC manufacturing. We report a promising way for fabricating fully intermetallic interconnects with a regular grain morphology and a strong texture feature by soldering single crystal (111) Cu/Sn/polycrystalline Cu interconnects under the temperature gradient. Continuous epitaxial growth of η-Cu6Sn5 at cold end liquid-Sn/(111)Cu interfaces has been demonstrated. The resultant η-Cu6Sn5 grains show faceted prism textures with an intersecting angle of 60° and highly preferred orientation with their ⟨ 11 2 ¯ 0 ⟩ directions nearly paralleling to the direction of the temperature gradient. These desirable textures are maintained even after soldering for 120 min. The results pave the way for controlling the morphology and orientation of interfacial intermetallics in 3D packaging technologies.

Mechanical Deformation Behavior of Sn-Ag-Cu Solders with Minor Addition of 0.05 wt.% Ni

Science.gov (United States)

Hammad, A. E.; El-Taher, A. M.

2014-11-01

The aim of the present work is to develop a comparative evaluation of the microstructural and mechanical deformation behavior of Sn-Ag-Cu (SAC) solders with the minor addition of 0.05 wt.% Ni. Test results showed that, by adding 0.05Ni element into SAC solders, generated mainly small rod-shaped (Cu,Ni)6Sn5 intermetallic compounds (IMCs) inside the β-Sn phase. Moreover, increasing the Ag content and adding Ni could result in the change of the shape and size of the IMC precipitate. Hence, a significant improvement is observed in the mechanical properties of SAC solders with increasing Ag content and Ni addition. On the other hand, the tensile results of Ni-doped SAC solders showed that both the yield stress and ultimate tensile strengths decrease with increasing temperature and with decreasing strain rate. This behavior was attributed to the competing effects of work hardening and dynamic recovery processes. The Sn-2.0Ag-0.5Cu-0.05Ni solder displayed the highest mechanical properties due to the formation of hard (Cu,Ni)6Sn5 IMCs. Based on the obtained stress exponents and activation energies, it is suggested that the dominant deformation mechanism in SAC (205)-, SAC (0505)- and SAC (0505)-0.05Ni solders is pipe diffusion, and lattice self-diffusion in SAC (205)-0.05Ni solder. In view of these results, the Sn-2.0Ag-0.5Cu-0.05Ni alloy is a more reliable solder alloy with improved properties compared with other solder alloys tested in the present work.

Soldering-induced Cu diffusion and intermetallic compound formation between Ni/Cu under bump metallization and SnPb flip-chip solder bumps

Science.gov (United States)

Huang, Chien-Sheng; Jang, Guh-Yaw; Duh, Jenq-Gong

2004-04-01

Nickel-based under bump metallization (UBM) has been widely used as a diffusion barrier to prevent the rapid reaction between the Cu conductor and Sn-based solders. In this study, joints with and without solder after heat treatments were employed to evaluate the diffusion behavior of Cu in the 63Sn-37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure. The atomic flux of Cu diffused through Ni was evaluated from the concentration profiles of Cu in solder joints. During reflow, the atomic flux of Cu was on the order of 1015-1016 atoms/cm2s. However, in the assembly without solder, no Cu was detected on the surface of Ni even after ten cycles of reflow. The diffusion behavior of Cu during heat treatments was studied, and the soldering-process-induced Cu diffusion through Ni metallization was characterized. In addition, the effect of Cu content in the solder near the solder/intermetallic compound (IMC) interface on interfacial reactions between the solder and the Ni/Cu UBM was also discussed. It is evident that the (Cu,Ni)6Sn5 IMC might form as the concentration of Cu in the Sn-Cu-Ni alloy exceeds 0.6 wt.%.

Mechanistic Prediction of the Effect of Microstructural Coarsening on Creep Response of SnAgCu Solder Joints

Science.gov (United States)

Mukherjee, S.; Chauhan, P.; Osterman, M.; Dasgupta, A.; Pecht, M.

2016-07-01

Mechanistic microstructural models have been developed to capture the effect of isothermal aging on time dependent viscoplastic response of Sn3.0Ag0.5Cu (SAC305) solders. SnAgCu (SAC) solders undergo continuous microstructural coarsening during both storage and service because of their high homologous temperature. The microstructures of these low melting point alloys continuously evolve during service. This results in evolution of creep properties of the joint over time, thereby influencing the long term reliability of microelectronic packages. It is well documented that isothermal aging degrades the creep resistance of SAC solder. SAC305 alloy is aged for (24-1000) h at (25-100)°C (~0.6-0.8 × T melt). Cross-sectioning and image processing techniques were used to periodically quantify the effect of isothermal aging on phase coarsening and evolution. The parameters monitored during isothermal aging include size, area fraction, and inter-particle spacing of nanoscale Ag3Sn intermetallic compounds (IMCs) and the volume fraction of micronscale Cu6Sn5 IMCs, as well as the area fraction of pure tin dendrites. Effects of microstructural evolution on secondary creep constitutive response of SAC305 solder joints were then modeled using a mechanistic multiscale creep model. The mechanistic phenomena modeled include: (1) dispersion strengthening by coarsened nanoscale Ag3Sn IMCs in the eutectic phase; and (2) load sharing between pro-eutectic Sn dendrites and the surrounding coarsened eutectic Sn-Ag phase and microscale Cu6Sn5 IMCs. The coarse-grained polycrystalline Sn microstructure in SAC305 solder was not captured in the above model because isothermal aging does not cause any significant change in the initial grain size and orientation of SAC305 solder joints. The above mechanistic model can successfully capture the drop in creep resistance due to the influence of isothermal aging on SAC305 single crystals. Contribution of grain boundary sliding to the creep strain of

Influence of Nickel Thickness and Annealing Time on the Mechanical Properties of Intermetallic Compounds Formed between Cu-Sn Solder and Substrate

Energy Technology Data Exchange (ETDEWEB)

Kim, Yiseul; Kwon, Jeehye; Yoo, Dayoung; Park, Sungkyu; Lee, Dajeong; Lee, Dongyun [Pusan National University, Busan (Korea, Republic of)

2017-03-15

Intermetallic compounds (IMCs) developed on the interface between a solder alloy and its bonding pads are an important factor in the failure of electronic circuits. In this study, the mechanical behaviors of the IMCs formed in the Cu-Ni-Sn ternary alloy system are investigated. Presumably, Ni can act as a diffusion barrier to Cu and Sn to form the IMCs. Detailed analysis of the microstructure is conducted using an electron probe micro-analyzer (EPMA). The addition of Ni softened the IMCs, which is determined based on the fracture toughness increasing (from 0.71 to 1.55 MPa√m) with the Ni layer thickness. However, above a critical amount of Ni involved in the Cu-Sn IMCs, the softening effect is diminished, and this could result from the segregation of Ni inside the IMCs. Therefore, the optimized condition must be determined in order to obtain a positive Ni effect on enhancing the reliability of the electronic circuits.

The influence of Ni additions on the relative stability of η and η′ Cu6Sn5

KAUST Repository

Schwingenschlögl, Udo

2010-02-09

We investigate how 5 at. % Ni influences the relative stability of η and η′ Cu6Sn5. Synchrotron x-ray diffraction shows that, while Cu6Sn5 exists as η′ at 25 and 150 °C and transforms to η on heating to 200 °C, Cu5.5Ni0.5Sn5 is best fit to η throughout 25–200 °C. Our first principles calculations predict that η′ is stable at T=0 K in both Cu6Sn5 and Cu5.5Ni0.5Sn5, but that the energy difference is substantially reduced from 1.21 to 0.90 eV per 22 atom cell by the Ni addition. This effect is attributed to Ni developing distinct bonding to both Cu and Sn in the η phase.

Thermal and mechanical properties of lead-free SnZn–xNa casting alloys, and interfacial chemistry on Cu substrates during the soldering process

Energy Technology Data Exchange (ETDEWEB)

Gancarz, Tomasz, E-mail: tomasz.gancarz@imim.pl [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Krakow (Poland); Bobrowski, Piotr; Pstruś, Janusz [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Krakow (Poland); Pawlak, Sylwia [Wroclaw Research Centre EIT+, Wroclaw (Poland)

2016-09-15

The microstructural features, thermal properties and mechanical properties of eutectic Sn–Zn alloys with varying Na content (0.1, 0.2, 0.5, 1.0 3.0 and 5.0 at. %) were examined in this study. In the scanning electron microscopy, transmission electron microscopy, and X-ray diffraction analysis data, precipitates of NaSn were observed. The addition of Na to eutectic Sn–Zn alloy improved the mechanical properties and increased electrical resistivity, and reduced the coefficient of thermal expansion; however, the melting point did not change. Wettability tests carried out using Na-doped Sn–15Zn alloys on Cu substrates showed the formation of Cu–Zn phases at the interfaces. Wettability studies were performed using flux ALU33 after 60, 180, 480, 900, 1800 and 3600 s of contact, at temperatures of 230, 250, 280 and 320 °C. The experiments were designed to demonstrate the effect of Na addition on the formation and growth kinetics of Cu{sub 5}Zn{sub 8} and CuZn{sub 4} phases, which were identified using XRDs and EDS. The addition of Na to SnZn causes a reduction in the thickness of the intermetallic compounds layer created at the interface between the liquid solder and the Cu substrate, and an increase in the activation energy of the Cu{sub 5}Zn{sub 8} phase compared to eutectic SnZn. - Highlights: • Precipitates of NaSn was observed and confirmed using TEM and XRD. • Addition Na to eutectic SnZn cussed increased the mechanical properties. • IMCs of Na–Zn and Na–Sn increased electrical resistivity and reduced the CTE. • IMCs layers CuZn{sub 4} and Cu{sub 5}Zn{sub 8} was found at the interface. • Na content changing the character of growth CuZn{sub 4} layer in SnZnNa alloys.

The tin-rich copper lithium stannides: Li3Cu6Sn4 and Li2CuSn2

International Nuclear Information System (INIS)

Fuertauer, Siegfried; Flandorfer, Hans; Effenberger, Herta S.

2015-01-01

The Sn rich ternary intermetallic compounds Li 3 Cu 6 Sn 4 (CSD-427097) and Li 2 CuSn 2 (CSD-427098) were synthesized from the pure elements by induction melting and annealing at 400 C. Structural investigations were performed by powder- and single-crystal XRD. Li 3 Cu 6 Sn 4 crystallizes in space group P6/mmm; it is structurally related to but not isotypic with MgFe 6 Ge 6 (a = 5.095(2) Aa, c = 9.524(3) Aa; wR 2 = 0.059; 239 unique F 2 -values, 17 free variables). Li 3 Cu 6 Sn 4 is characterized by two sites with a mixed Cu:Sn occupation. In contrast to all other Cu-Li-Sn compounds known so far, any mixed occupation was found for Cu-Li pairs only. In addition, one Li site is only half occupied. The second Sn rich phase is Li 2 CuSn 2 (space group I4 1 /amd, a = 4.4281(15) Aa, c = 19.416(4) Aa; wR 2 = 0.033; 213 unique F 2 -values, 12 atom free variables); it is the only phase in the Cu-Li-Sn system which is noted for full ordering. Both crystal structures exhibit 3D-networks which host Li atoms in channels. They are important for understanding the lithiation mechanism in Cu-Sn electrodes for Li-ion batteries.

Kinetics of intermetallic phase formation at the interface of Sn-Ag-Cu-X (X = Bi, In) solders with Cu substrate

International Nuclear Information System (INIS)

Hodulova, Erika; Palcut, Marian; Lechovic, Emil; Simekova, Beata; Ulrich, Koloman

2011-01-01

Highlights: → In substitutes Sn in intermetallic compounds formed at the Cu-solder interface. → Bi and In decrease the parabolic rate constant of Cu 3 Sn layer growth. → In increases the parabolic rate constant of Cu 6 Sn 5 layer growth. → High In concentrations should be avoided since they may lead to a pre-mature solder joint degradation. - Abstract: The effects of Bi and In additions on intermetallic phase formation in lead-free solder joints of Sn-3.7Ag-0.7Cu; Sn-1.0Ag-0.5Cu-1.0Bi and Sn-1.5Ag-0.7Cu-9.5In (composition given in weight %) with copper substrate are studied. Soldering of copper plate was conducted at 250 deg. C for 5 s. The joints were subsequently aged at temperatures of 130-170 deg. C for 2-16 days in a convection oven. The aged interfaces were analyzed by optical microscopy and energy dispersive X-ray spectroscopy (EDX) microanalysis. Two intermetallic layers are observed at the interface - Cu 3 Sn and Cu 6 Sn 5 . Cu 6 Sn 5 is formed during soldering. Cu 3 Sn is formed during solid state ageing. Bi and In decrease the growth rate of Cu 3 Sn since they appear to inhibit tin diffusion through the grain boundaries. Furthermore, indium was found to produce a new phase - Cu 6 (Sn,In) 5 instead of Cu 6 Sn 5 , with a higher rate constant. The mechanism of the Cu 6 (Sn,In) 5 layer growth is discussed and the conclusions for the optimal solder chemical composition are presented.

The influence of Ni additions on the relative stability of η and η′ Cu6Sn5

KAUST Repository

Schwingenschlö gl, Udo; Di Paola, Cono; Gourlay, C. M.; Nogita, K.

2010-01-01

We investigate how 5 at. % Ni influences the relative stability of η and η′ Cu6Sn5. Synchrotron x-ray diffraction shows that, while Cu6Sn5 exists as η′ at 25 and 150 °C and transforms to η on heating to 200 °C, Cu5.5Ni0.5Sn5 is best fit to η

Microstructural behavior of iron and bismuth added Sn-1Ag-Cu solder under elevated temperature aging

Energy Technology Data Exchange (ETDEWEB)

Ali, Bakhtiar, E-mail: engrbakhtiaralikhan@gmail.com; Sabri, Mohd Faizul Mohd, E-mail: faizul@um.edu.my; Jauhari, Iswadi, E-mail: iswadi@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2016-07-19

An extensive study was done to investigate the microstructural behavior of iron (Fe) and bismuth (Bi) added Sn-1Ag-0.5Cu (SAC105) under severe thermal aging conditions. The isothermal aging was done at 200 °C for 100 h, 200 h, and 300 h. Optical microscopy with cross-polarized light revealed that the grain size significantly reduces with Fe/Bi addition to the base alloy SAC105 and remains literally the same after thermal aging. The micrographs of field emission scanning electron microscopy (FESEM) with backscattered electron detector and their further analysis via imageJ software indicated that Fe/Bi added SAC105 showed a significant reduction in the IMCs size (Ag{sub 3}Sn and Cu{sub 6}Sn{sub 5}), especially the Cu{sub 6}Sn{sub 5} IMCs, as well as β-Sn matrix and a refinement in the microstructure, which is due to the presence of Bi in the alloys. Moreover, their microstructure remains much more stable under severe thermal aging conditions, which is because of the presence of both Fe and Bi in the alloy. The microstructural behavior suggests that Fe/Bi modified SAC105 would have much improved reliability under severe thermal environments. These modified alloys also have relatively low melting temperature and low cost.

Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

International Nuclear Information System (INIS)

Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

2012-01-01

A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

Whisker and Hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits

International Nuclear Information System (INIS)

Boettinger, W.J.; Johnson, C.E.; Bendersky, L.A.; Moon, K.-W.; Williams, M.E.; Stafford, G.R.

2005-01-01

High purity bright Sn, Sn-Cu and Sn-Pb layers, 3, 7 and 16 μm thick were electrodeposited on phosphor bronze cantilever beams in a rotating disk apparatus. Beam deflection measurements within 15 min of plating proved that all electrodeposits had in-plane compressive stress. In several days, the surfaces of the Sn-Cu deposits, which have the highest compressive stress, develop 50 μm contorted hillocks and 200 μm whiskers, pure Sn deposits develop 20 μm compact conical hillocks, and Sn-Pb deposits, which have the lowest compressive stress, remain unchanged. The differences between the initial compressive stresses for each alloy and pure Sn is due to the rapid precipitation of Cu 6 Sn 5 or Pb particles, respectively, within supersaturated Sn grains produced by electrodeposition. Over longer time, analysis of beam deflection measurements indicates that the compressive stress is augmented by the formation of Cu 6 Sn 5 on the bronze/Sn interface, while creep of the electrodeposit tends to decrease the compressive stress. Uniform creep occurs for Sn-Pb because it has an equi-axed grain structure. Localized creep in the form of hillocks and whiskers occurs for Sn and Sn-Cu because both have columnar structures. Compact hillocks form for the Sn deposits because the columnar grain boundaries are mobile. Contorted hillocks and whiskers form for the Sn-Cu deposits because the columnar grain boundary motion is impeded

Improving the mechanical performance of Sn57.6Bi0.4Ag solder joints on Au/Ni/Cu pads during aging and electromigration through the addition of tungsten (W) nanoparticle reinforcement

Energy Technology Data Exchange (ETDEWEB)

Li, Yi, E-mail: yili64-c@my.cityu.edu.hk [Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Luo, Kaiming; Lim, Adeline B.Y.; Chen, Zhong [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wu, Fengshun [School of Materials Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan (China); Chan, Y.C. [Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

2016-07-04

Sn57.6Bi0.4Ag solder has been reinforced successfully through the addition of tungsten (W) nanoparticles at a concentration of 0.5 wt%. With the addition of W nanoparticles, the solder matrix lamellar interphase spacing was reduced by 31.0%. Due to the dispersion of W nanoparticles and the consequently refined microstructure, the mechanical properties of the solder alloy were enhanced, as indicated by a 6.2% improvement in the microhardness. During the reflow of solder on Au/Ni/Cu pads, the entire Au layer dissolved into the molten solder rapidly and a large number of (Au,Ni)(Sn,Bi){sub 4} particles were formed. The fracture path of the as-reflowed joint was within the solder region, showing ductile characteristic, and the shear strength was reinforced by 8.2%, due to the enhanced mechanical properties of the solder. During the subsequent aging process, the Au migrated back towards the interface and a thick layer of interfacial (Au,Ni)(Sn,Bi){sub 4} IMC was formed, leading to the shift of the fracture path to the interfacial IMC region, the transformation to brittle fracture and the deterioration of the strength of the joint, due to Au embrittlement. By adding W nanoparticles, the migration of Au was mitigated and the thickness of the (Au,Ni)(Sn,Bi){sub 4} layer was reduced significantly, which reduced the Au embrittlement-induced deterioration of the strength of the joint. During electromigration, the segregation of the Bi-rich and Sn-rich phases and the accumulation of the (Au,Ni)(Sn,Bi){sub 4} layer at cathode interface were mitigated by the addition of W nanoparticles, which improved the electromigration resistance.

Kinetics of Isothermal Reactive Diffusion Between Solid Cu and Liquid Sn

Science.gov (United States)

O, M.; Suzuki, T.; Kajihara, M.

2018-01-01

The Cu/Sn system is one of the most fundamental and important metallic systems for solder joints in electric devices. To realize reliable solder joints, information on reactive diffusion at the solder joint is very important. In the present study, we experimentally investigated the kinetics of the reactive diffusion between solid Cu and liquid Sn using semi-infinite Cu/Sn diffusion couples prepared by an isothermal bonding technique. Isothermal annealing of the diffusion couple was conducted in the temperature range of 533-603 K for various times up to 172.8 ks (48 h). Using annealing, an intermetallic layer composed of Cu6Sn5 with scallop morphology and Cu3Sn with rather uniform thickness is formed at the original Cu/Sn interface in the diffusion couple. The growth of the Cu6Sn5 scallop occurs much more quickly than that of the Cu3Sn layer and thus predominates in the overall growth of the intermetallic layer. This tendency becomes more remarkable at lower annealing temperatures. The total thickness of the intermetallic layer is proportional to a power function of the annealing time, and the exponent of the power function is close to unity at all the annealing temperatures. This means that volume diffusion controls the intermetallic growth and the morphology of the Cu6Sn5/Sn interface influences the rate-controlling process. Adopting a mean value of 0.99 for the exponent, we obtain a value of 26 kJ/mol for the activation enthalpy of the intermetallic growth.

The Effects of Antimony Addition on the Microstructural, Mechanical, and Thermal Properties of Sn-3.0Ag-0.5Cu Solder Alloy

Science.gov (United States)

Sungkhaphaitoon, Phairote; Plookphol, Thawatchai

2018-02-01

In this study, we investigated the effects produced by the addition of antimony (Sb) to Sn-3.0Ag-0.5Cu-based solder alloys. Our focus was the alloys' microstructural, mechanical, and thermal properties. We evaluated the effects by means of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), differential scanning calorimetry (DSC), and a universal testing machine (UTM). The results showed that a part of the Sb was dissolved in the Sn matrix phase, and the remaining one participated in the formation of intermetallic compounds (IMCs) of Ag3(Sn,Sb) and Cu6(Sn,Sb)5. In the alloy containing the highest wt pct Sb, the added component resulted in the formation of SnSb compound and small particle pinning of Ag3(Sn,Sb) along the grain boundary of the IMCs. Our tests of the Sn-3.0Ag-0.5Cu solder alloys' mechanical properties showed that the effects produced by the addition of Sb varied as a function of the wt pct Sb content. The ultimate tensile strength (UTS) increased from 29.21 to a maximum value of 40.44 MPa, but the pct elongation (pct EL) decreased from 48.0 to a minimum 25.43 pct. Principally, the alloys containing Sb had higher UTS and lower pct EL than Sb-free solder alloys due to the strengthening effects of solid solution and second-phase dispersion. Thermal analysis showed that the alloys containing Sb had a slightly higher melting point and that the addition amount ranging from 0.5 to 3.0 wt pct Sb did not significantly change the solidus and liquidus temperatures compared with the Sb-free solder alloys. Thus, the optimal concentration of Sb in the alloys was 3.0 wt pct because the microstructure and the ultimate tensile strength of the SAC305 solder alloys were improved.

Quantifying the dependence of Ni(P) thickness in ultrathin-ENEPIG metallization on the growth of Cu–Sn intermetallic compounds in soldering reaction

Energy Technology Data Exchange (ETDEWEB)

Ho, Cheng-Ying; Duh, Jenq-Gong, E-mail: jgd@mx.nthu.edu.tw

2014-11-14

A new multilayer metallization, ENEPIG (Electroless Ni(P)/Electroless Pd/Immersion Au) with ultrathin Ni(P) deposit (ultrathin-ENEPIG), was designed to be used in high frequency electronic packaging in this study because of its ultra-low electrical impedance. Sequential interfacial microstructures of commercial Sn–3.0Ag–0.5Cu solders reflowed on ultarthin-ENEPIG with Ni(P) deposit thickness ranged from 4.79 μm to 0.05 μm were first investigated. Accelerated thermal aging test was then conducted to evaluate the long-term thermal stabilization of solder joints. The results showed that P-rich intermetallic compound (IMC) layer formed when the Ni(P) thickness was greater than a critical vale (about 0.18 μm). Besides, it is interesting to mention that the growth of (Cu,Ni){sub 6}Sn{sub 5} and (Cu,Ni){sub 3}Sn IMCs was suppressed with the formation of P-rich layer, i.e., Ni{sub 3}P and Ni{sub 2}Sn{sub 1+x}P{sub 1−x} phase, even though the electroless-plated Ni(P) layer was exhausted at initial stage of reflow process. The atomic Cu flux in solder joints without P-rich layer was calculated to be several times larger than that with P-rich layer formation after calculation, which implies that the P-rich layer and ultrathin Ni(P) deposit in ENEPIG served as diffusion barrier against rapid Cu diffusion. - Highlights: • Microstructures in ultrathin-ENEPIG with various Ni(P) thickness are investigated. • P-rich IMC layer formed when the Ni(P) thickness is greater than 0.18 μm. • Secondary (Cu,Ni){sub 6}Sn{sub 5} formed when the Ni(P) thickness is between 0.18 and 0.31 μm. • Cu diffusion flux without P-rich layer is larger than those with P-rich layer. • P-rich layer in ultrathin-ENEPIG exhibits good diffusion barrier characteristic.

Miniaturization of Micro-Solder Bumps and Effect of IMC on Stress Distribution

Science.gov (United States)

Choudhury, Soud Farhan; Ladani, Leila

2016-07-01

As the joints become smaller in more advanced packages and devices, intermetallic (IMCs) volume ratio increases, which significantly impacts the overall mechanical behavior of joints. The existence of only a few grains of Sn (Tin) and IMC materials results in anisotropic elastic and plastic behavior which is not detectable using conventional finite element (FE) simulation with average properties for polycrystalline material. In this study, crystal plasticity finite element (CPFE) simulation is used to model the whole joint including copper, Sn solder and Cu6Sn5 IMC material. Experimental lap-shear test results for solder joints from the literature were used to validate the models. A comparative analysis between traditional FE, CPFE and experiments was conducted. The CPFE model was able to correlate the experiments more closely compared to traditional FE analysis because of its ability to capture micro-mechanical anisotropic behavior. Further analysis was conducted to evaluate the effect of IMC thickness on stress distribution in micro-bumps using a systematic numerical experiment with IMC thickness ranging from 0% to 80%. The analysis was conducted on micro-bumps with single crystal Sn and bicrystal Sn. The overall stress distribution and shear deformation changes as the IMC thickness increases. The model with higher IMC thickness shows a stiffer shear response, and provides a higher shear yield strength.

The tin-rich copper lithium stannides: Li{sub 3}Cu{sub 6}Sn{sub 4} and Li{sub 2}CuSn{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Fuertauer, Siegfried; Flandorfer, Hans [Vienna Univ. (Austria). Inst. of Inorganic Chemistry (Materials Chemisrty); Effenberger, Herta S. [Vienna Univ. (Austria). Inst. of Mineralogy and Crystallography

2015-05-01

The Sn rich ternary intermetallic compounds Li{sub 3}Cu{sub 6}Sn{sub 4} (CSD-427097) and Li{sub 2}CuSn{sub 2} (CSD-427098) were synthesized from the pure elements by induction melting and annealing at 400 C. Structural investigations were performed by powder- and single-crystal XRD. Li{sub 3}Cu{sub 6}Sn{sub 4} crystallizes in space group P6/mmm; it is structurally related to but not isotypic with MgFe{sub 6}Ge{sub 6} (a = 5.095(2) Aa, c = 9.524(3) Aa; wR{sub 2} = 0.059; 239 unique F{sup 2}-values, 17 free variables). Li{sub 3}Cu{sub 6}Sn{sub 4} is characterized by two sites with a mixed Cu:Sn occupation. In contrast to all other Cu-Li-Sn compounds known so far, any mixed occupation was found for Cu-Li pairs only. In addition, one Li site is only half occupied. The second Sn rich phase is Li{sub 2}CuSn{sub 2} (space group I4{sub 1}/amd, a = 4.4281(15) Aa, c = 19.416(4) Aa; wR{sub 2} = 0.033; 213 unique F{sup 2}-values, 12 atom free variables); it is the only phase in the Cu-Li-Sn system which is noted for full ordering. Both crystal structures exhibit 3D-networks which host Li atoms in channels. They are important for understanding the lithiation mechanism in Cu-Sn electrodes for Li-ion batteries.

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

Science.gov (United States)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Electromigration in 3D-IC scale Cu/Sn/Cu solder joints

Energy Technology Data Exchange (ETDEWEB)

Ho, Cheng-En, E-mail: ceho1975@hotmail.com; Lee, Pei-Tzu; Chen, Chih-Nan; Yang, Cheng-Hsien

2016-08-15

The electromigration effect on the three-dimensional integrated circuits (3D-IC) scale solder joints with a Cu/Sn(25–50 μm)/Cu configuration was investigated using a field-emission scanning electron microscope (FE–SEM) combined with electron backscatter diffraction (EBSD) analysis system. Electron current stressing for a few days caused the pronounced accumulation of Cu{sub 6}Sn{sub 5} in specific Sn grain boundaries (GBs). The EBSD analysis indicated that both the β-Sn crystallographic orientation and GB orientation play dominant roles in this accumulation. The dependencies of the Cu{sub 6}Sn{sub 5} accumulation on the two above factors (i.e., Sn grain orientation and GB orientation) can be well rationalized via a proposed mathematic model based on the Huntington and Grone's electromigration theory with the Cu anisotropic diffusion data in a β-Sn lattice. - Highlights: • Anisotropic Cu electromigration in the 3D-IC scale microelectronic solder joints. • Pronounced accumulation of Cu{sub 6}Sn{sub 5} intermetallic in specific Sn grain boundaries. • A linear dependence of Cu{sub 6}Sn{sub 5} accumulation over the current stressing time. • β-Sn and grain boundary orientations are the dominant factors in Cu{sub 6}Sn{sub 5} accumulation.

Influence of ZnO nano-particles addition on thermal analysis, microstructure evolution and tensile behavior of Sn–5.0 wt% Sb–0.5 wt% Cu lead-free solder alloy

Energy Technology Data Exchange (ETDEWEB)

Fouda, A.N., E-mail: alynabieh@yahoo.com [Physics Department, Faculty of Science, Suez-Canal University, 41522 Ismailia (Egypt); Eid, E.A., E-mail: dr_eid_hti@yahoo.com [Basic Science Department, Higher Technological Institute, 44629 10th of Ramadan City (Egypt)

2015-04-24

Sn–5 wt%Sb–0.5 wt%Cu (plain SSC505) and Sn–5 wt%Sb–0.5 wt%Cu–0.5 wt% ZnO (SSC-ZnO) composite solder alloys have been studied. The variation in thermal behavior, microstructure and tensile characteristics associated with mixing of 0.5 wt% ZnO nano-metric particles to plain SSC505 solder were investigated. A slight increment in the melting temperature [ΔT{sub m}=0.89 °C] was recorded using differential scanning calorimetry (DSC) after addition of ZnO. X-Ray diffraction (XRD) analysis confirmed the existence of β-Sn, SbSn and Cu{sub 6}Sn{sub 5} intermetallic compounds (IMCs) beside some of ZnO planes in SSC-ZnO composite solder. Field emission scanning electronic microscope (FE-SEM) investigation of SSC-ZnO composite solder revealed a homogenous uniform distribution, size refinement of IMCs and β-Sn grains. Addition of ZnO nano-metric particles into the plain SSC505 enhanced the yield stress σ{sub YS} by ~12% and improved the ultimate tensile strength σ{sub UTS} by ~13%. In addition, adding ZnO nano-metric particles was found to be effective for reducing ductility by ~43% of the plain solder due to the refinement of β-Sn grains within SSC-ZnO composite solder. - Highlights: • Melting point of SSC505-ZnO composite solder is slightly increased by 0.89 {sup ο}C compared with the plain SSC505 solder. • XRD and EDX analysis reflect the presence of SbSn, Cu{sub 6}Sn{sub 5} IMCs. • EF-SEM images of SSC-ZnO composite solder revealed homogenous uniform distribution of β-Sn grains and fine IMC particles. • A detectable improvement in the Young modulus, ultimate tensile strength and yield strength were observed after addition of 0.5 wt% ZnO nano-metric particles.

Void formation and its impact on Cu−Sn intermetallic compound formation

International Nuclear Information System (INIS)

Ross, Glenn; Vuorinen, Vesa; Paulasto-Kröckel, Mervi

2016-01-01

Void formation in the Cu−Sn system has been identified as a major reliability issue with small volume electronic interconnects. Voids form during the interdiffusion of electrochemically deposited Cu and Sn, with varying magnitude and density. Electroplating parameters include the electrolytic chemistry composition and the electroplating current density, all of which appear to effect the voiding characteristics of the Cu−Sn system. In addition, interfacial voiding affects the growth kinetics of the Cu_3Sn and Cu_6Sn_5 intermetallic compounds of the Cu−Sn system. The aim here is to present voiding data as a function of electroplating chemistry and current density over a duration (up to 72 h) of isothermal annealing at 423 K (150 °C). Voiding data includes the average interfacial void size and average void density. Voids sizes grew proportionally as a function of thermal annealing time, whereas the void density grew initially very quickly but tended to saturate at a fixed density. A morphological evolution analysis called the physicochemical approach is utilised to understand the processes that occur when a voided Cu/Cu_3Sn interface causes changes to the IMC phase growth. The method is used to simulate the intermetallic thickness growths' response to interfacial voiding. The Cu/Cu_3Sn interface acts as a Cu diffusion barrier disrupting the diffusion of Cu. This resulted in a reduction in the Cu_3Sn thickness and an accelerated growth rate of Cu_6Sn_5. - Highlights: • Average void size is proportional linearly to thermal annealing time. • Average void density grows initially very rapidly followed by saturation. • Voids located close to the Cu/Cu_3Sn interface affect IMC growth rates. • Voids act as a diffusion barrier inhibiting Cu diffusion towards Sn. • Voids located at the interface cause Cu_3Sn to be consumed by Cu_6Sn_5.

Effect of Solder-Joint Geometry on the Low-Cycle Fatigue Behavior of Sn- xAg-0.7Cu

Science.gov (United States)

Lee, Hwa-Teng; Huang, Kuo-Chen

2016-12-01

Low-cycle fatigue tests of Sn-Ag-Cu (SAC) Pb-free solder joints under fixed displacement were performed to evaluate the influence of Ag content (0-3 wt.%) and solder-joint geometry (barrel and hourglass types) on solder-joint fatigue behavior and reliability. The solder joints were composed of fine particles of Ag3Sn and Cu6Sn5, which aggregated as an eutectic constituent at grain boundaries of the primary β-Sn phase and formed a dense network structure. A decrease in the Ag content resulted in coarsening of the β-Sn and eutectic phases, which, in turn, decreased the strength of the joint and caused earlier failure. Solder joints in the hourglass form exhibited better fatigue performance with longer life than barrel-type joints. The sharp contact angle formed between the solder and the Cu substrate by the barrel-type joints concentrated stress, which compromised fatigue reliability. The addition of Ag to the solder, however, enhanced fatigue performance because of strengthening caused by Ag3Sn formation. The cracks of the barrel-type SAC solder joints originated mostly at the contact corner and propagated along the interfacial layer between the interfacial intermetallic compound (IMC) and solder matrix. Hourglass-type solder joints, however, demonstrated both crack initiation and propagation in the solder matrix (solder mode). The addition of 1.5-2.0 wt.% Ag to SAC solder appears to enhance the fatigue performance of solder joints while maintaining sufficient strength.

Morphology and chemical composition of Cu/Sn/Cu and Cu(5 at-%Ni)/Sn/Cu(5 at-%Ni) interconnections

NARCIS (Netherlands)

Wierzbicka-Miernik, A.; Wojewoda-Budka, J.; Litynska-Dobrzynska, L.; Kodentsov, A.; Zieba, P.

2012-01-01

In the present paper, scanning and transmission electron microscopies as well as energy dispersive X-ray spectroscopy investigations were performed to describe the morphology and chemical composition of the intermetallic phases growing in Cu/Sn/Cu and Cu(Ni)/Sn/Cu(Ni) interconnections during the

Void formation and its impact on Cu−Sn intermetallic compound formation

Energy Technology Data Exchange (ETDEWEB)

Ross, Glenn, E-mail: Glenn.Ross@aalto.fi; Vuorinen, Vesa; Paulasto-Kröckel, Mervi

2016-08-25

Void formation in the Cu−Sn system has been identified as a major reliability issue with small volume electronic interconnects. Voids form during the interdiffusion of electrochemically deposited Cu and Sn, with varying magnitude and density. Electroplating parameters include the electrolytic chemistry composition and the electroplating current density, all of which appear to effect the voiding characteristics of the Cu−Sn system. In addition, interfacial voiding affects the growth kinetics of the Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} intermetallic compounds of the Cu−Sn system. The aim here is to present voiding data as a function of electroplating chemistry and current density over a duration (up to 72 h) of isothermal annealing at 423 K (150 °C). Voiding data includes the average interfacial void size and average void density. Voids sizes grew proportionally as a function of thermal annealing time, whereas the void density grew initially very quickly but tended to saturate at a fixed density. A morphological evolution analysis called the physicochemical approach is utilised to understand the processes that occur when a voided Cu/Cu{sub 3}Sn interface causes changes to the IMC phase growth. The method is used to simulate the intermetallic thickness growths' response to interfacial voiding. The Cu/Cu{sub 3}Sn interface acts as a Cu diffusion barrier disrupting the diffusion of Cu. This resulted in a reduction in the Cu{sub 3}Sn thickness and an accelerated growth rate of Cu{sub 6}Sn{sub 5}. - Highlights: • Average void size is proportional linearly to thermal annealing time. • Average void density grows initially very rapidly followed by saturation. • Voids located close to the Cu/Cu{sub 3}Sn interface affect IMC growth rates. • Voids act as a diffusion barrier inhibiting Cu diffusion towards Sn. • Voids located at the interface cause Cu{sub 3}Sn to be consumed by Cu{sub 6}Sn{sub 5}.

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

CuSn(OH)6 submicrospheres: Room-temperature synthesis, growth mechanism, and weak antiferromagnetic behavior

International Nuclear Information System (INIS)

Zhong, Sheng-Liang; Xu, Rong; Wang, Lei; Li, Yuan; Zhang, Lin-Fei

2011-01-01

Highlights: ► CuSn(OH) 6 spheres have been synthesized via an aqueous solution method at room temperature. ► The diameters of the CuSn(OH) 6 spheres can be tuned by adjusting the molar ratio of SnO 3 2− to Cu 2+ . ► The as-obtained CuSn(OH) 6 spheres are antiferromagnetic and have a weak spin-Peierls transition at about 78 K -- Abstract: CuSn(OH) 6 submicrospheres with diameters of 400–900 nm have been successfully fabricated using a simple aqueous solution method at room temperature. Influencing factors such as the dosage of reactants and reaction time on the preparation were systematically investigated. The products were characterized with X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TG) and differential thermal analysis (DTA). Results reveal that the CuSn(OH) 6 spheres are built from numerous nanoparticles. It is found that the diameter of CuSn(OH) 6 spheres can be readily tuned by adjusting the molar ratio of SnO 3 2− to Cu 2+ . A possible growth mechanism for the CuSn(OH) 6 submicrospheres has been proposed. Amorphous CuSnO 3 submicrospheres were obtained after thermal treatment of the CuSn(OH) 6 submicrospheres at 300 °C for 4 h. Standard magnetization measurements demonstrate that the CuSn(OH) 6 submicrospheres are antiferromagnetic and have a weak spin-Peierls transition at about 78 K.

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

Wafer level hermetic packaging based on Cu-Sn isothermal solidification technology

International Nuclear Information System (INIS)

Cao Yuhan; Luo Le

2009-01-01

A novel wafer level bonding method based on Cu-Sn isothermal solidification technology is established. A multi-layer sealing ring and the bonding processing are designed, and the amount of solder and the bonding parameters are optimized based on both theoretical and experimental results. Verification shows that oxidation of the solder layer, voids and the scalloped-edge appearance of the Cu 6 Sn 5 phase are successfully avoided. An average shear strength of 19.5 MPa and an excellent leak rate of around 1.9 x 10 -9 atm cc/s are possible, meeting the demands of MIL-STD-883E. (semiconductor technology)

Growth kinetics of the intermetallic phase in diffusion-soldered (Cu-5 at.%Ni)/Sn/(Cu-5 at.%Ni) interconnections

NARCIS (Netherlands)

Wierzbicka-Miernik, A.; Miernik, K.; Wojewoda-Budka, J.; Szyszkiewicz, K.; Filipek, R.; Litynska-Dobrzynska, L.; Kodentsov, A.; Zieba, P.

2013-01-01

A stereological analysis was carried out in order to obtain the kinetics parameters of the (Cu1-xNix)6Sn5 growth in the diffusion soldered (Cu–5 at.%Ni)/Sn/(Cu–5 at.%Ni) interconnections where previously anomalous fast growth of this phase was described. The n-parameter in the equation x = ktn was

Influence of the volume-contact area ratio on the growth behavior of the Cu-Sn intermetallic phase

Science.gov (United States)

Giddaluri, Venkatakamakshi Supraja

Solder Joints play a very important role in electronic packaging industry by serving as mechanical support and provides integrity to the device. The increasing demand for high performance, environmental and economic feasibility and miniaturization led to the development of high density interconnects. With the reduction in the size/standoff height of the solder reliability issues in the surface mount assemblies and packaging structures under various rigorous environments are becoming significant. One of the most important impact factors that affect the solder joint reliability is the growth rate IMC formed between the solder and substrate with reduction in joint size. IMC formation is required to ensure good bonding and connectivity of the device in packaging. However excess IMC growth rate is detrimental to the device from mechanical aspects due to its brittle nature. Thus there is a need to study effect the IMC growth rate behavior with the solder joint size/standoff height. In this present study, two solder joints of different standoff heights and same composition (pure Sn solder) are used subjected to reflow process at 270°C for 1--7 min to study solid liquid interfacial reaction on joint size and the same experiment is repeated with SAC alloy of composition (96.5% Sn, 3.0% Ag, 0.5% Cu) to investigate the effect of joint size and initial copper concentration on IMC growth rate. The IMC thickness of the Sn 15microm solder joint at 1 min and 7 min is found to be 1.52microm and 2.86microm respectively while that of Sn 150microm solder joint is 1.31microm and 3.16 microm. The thickness is high in low standoff height sample at the early stage of reaction with decrease in IMC growth rate as the time of reflow increases. In case of 25microm SAC alloy solder joint the IMC thickness from 1 and 7 min is found to be 2.1microm and 3.5microm while that of 250microm SAC alloy solder joint its 1.43microm and3.235microm. Similar trend is observed but the IMC thickness is more

Directional Solidification and Liquidus Projection of the Sn-Co-Cu System

Science.gov (United States)

Chen, Sinn-Wen; Chang, Jui-Shen; Pan, Kevin; Hsu, Chia-Ming; Hsu, Che-Wei

2013-04-01

This study investigates the Sn-Co-Cu ternary system, which is of interest to the electronics industry. Ternary Sn-Co-Cu alloys were prepared, their as-solidified microstructures were examined, and their primary solidification phases were determined. The primary solidification phases observed were Cu, Co, Co3Sn2, CoSn, CoSn2, Cu6Sn5, Co3Sn2, γ, and β phases. Although there are ternary compounds reported in this ternary system, no ternary compound was found as the primary solidification phase. The directional solidification technique was applied when difficulties were encountered using the conventional quenching method to distinguish the primary solidification phases, such as Cu6Sn5, Cu3Sn, and γ phases. Of all the primary solidification phases, the Co3Sn2 and Co phases have the largest compositional regimes in which alloys display them as the primary solidification phases. There are four class II reactions and four class III reactions. The reactions with the highest and lowest reaction temperatures are both class III reactions, and are L + CoSn2 + Cu6Sn5 = CoSn3 at 621.5 K (348.3 °C) and L + Co3Sn2 + CoSn = Cu6Sn5 at 1157.8 K (884.6 °C), respectively.

Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

Energy Technology Data Exchange (ETDEWEB)

Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

2017-04-01

Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

Phase Equilibria of Sn-Co-Cu Ternary System

Science.gov (United States)

Chen, Yu-Kai; Hsu, Chia-Ming; Chen, Sinn-Wen; Chen, Chih-Ming; Huang, Yu-Chih

2012-10-01

Sn-Co-Cu ternary alloys are promising lead-free solders, and isothermal sections of Sn-Co-Cu phase equilibria are fundamentally important for the alloys' development and applications. Sn-Co-Cu ternary alloys were prepared and equilibrated at 523 K, 1073 K, and 1273 K (250 °C, 800 °C, and 1000 °C), and the equilibrium phases were experimentally determined. In addition to the terminal solid solutions and binary intermetallic compounds, a new ternary compound, Sn3Co2Cu8, was found. The solubilities of Cu in the α-CoSn3 and CoSn2 phases at 523 K (250 °C) are 4.2 and 1.6 at. pct, respectively, while the Cu solubility in the α-Co3Sn2 phase is as high as 20.0 at. pct. The Cu solubility increases with temperature and is around 30.0 at. pct in the β-Co3Sn2 at 1073 K (800 °C). The Co solubility in the η-Cu6Sn5 phase is also significant and is 15.5 at. pct at 523 K (250 °C).

Microstructural discovery of Al addition on Sn–0.5Cu-based Pb-free solder design

International Nuclear Information System (INIS)

Koo, Jahyun; Lee, Changsoo; Hong, Sung Jea; Kim, Keun-Soo; Lee, Hyuck Mo

2015-01-01

It is important to develop Pb-free solder alloys suitable for automotive use instead of traditional Sn–Pb solder due to environmental regulations (e.g., Restriction of Hazardous Substances (RoHS)). Al addition has been spotlighted to enhance solder properties. In this study, we investigated the microstructural change of Sn–0.5Cu wt.% based Pb-free solder alloys with Al addition (0.01–0.05 wt.%). The small amount of Al addition caused a remarkable microstructural change. The Al was favored to form Cu–Al intermetallic compounds inside the solder matrix. We identified the Cu–Al intermetallic compound as Cu_3_3Al_1_7, which has a rhombohedral structure, using EPMA and TEM analyses. This resulted in refined Cu_6Sn_5 networks in the Sn–0.5Cu based solder alloy. In addition, we conducted thermal analysis to confirm its stability at a high temperature of approximately 230 °C, which is the necessary temperature range for automotive applications. The solidification results were substantiated thermodynamically using the Scheil solidification model. We can provide criteria for the minimum aluminum content to modify the microstructure of Pb-free solder alloys. - Graphical abstract: The minor Al additions refined eutectic Cu_6Sn_5 IMC networks on the Sn–0.5Cu based solder alloys. The microstructure was dramatically changed with the minor Al addition. - Highlights: • We observed dramatic microstructure-change with Al additions. • We defined Cu_3_3Al_1_7 IMC with Al additions using TEM analysis. • We investigated grain refinement with Al additions using EBSD. • We discussed the refinement based on Scheil solidification model.

Microstructural discovery of Al addition on Sn–0.5Cu-based Pb-free solder design

Energy Technology Data Exchange (ETDEWEB)

Koo, Jahyun; Lee, Changsoo [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Hong, Sung Jea [MK Electron Co., Ltd., Yongin Cheoin-gu 316-2 (Korea, Republic of); Kim, Keun-Soo, E-mail: keunsookim@hoseo.edu [Department of Display Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Lee, Hyuck Mo, E-mail: hmlee@kaist.ac.kr [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)

2015-11-25

It is important to develop Pb-free solder alloys suitable for automotive use instead of traditional Sn–Pb solder due to environmental regulations (e.g., Restriction of Hazardous Substances (RoHS)). Al addition has been spotlighted to enhance solder properties. In this study, we investigated the microstructural change of Sn–0.5Cu wt.% based Pb-free solder alloys with Al addition (0.01–0.05 wt.%). The small amount of Al addition caused a remarkable microstructural change. The Al was favored to form Cu–Al intermetallic compounds inside the solder matrix. We identified the Cu–Al intermetallic compound as Cu{sub 33}Al{sub 17}, which has a rhombohedral structure, using EPMA and TEM analyses. This resulted in refined Cu{sub 6}Sn{sub 5} networks in the Sn–0.5Cu based solder alloy. In addition, we conducted thermal analysis to confirm its stability at a high temperature of approximately 230 °C, which is the necessary temperature range for automotive applications. The solidification results were substantiated thermodynamically using the Scheil solidification model. We can provide criteria for the minimum aluminum content to modify the microstructure of Pb-free solder alloys. - Graphical abstract: The minor Al additions refined eutectic Cu{sub 6}Sn{sub 5} IMC networks on the Sn–0.5Cu based solder alloys. The microstructure was dramatically changed with the minor Al addition. - Highlights: • We observed dramatic microstructure-change with Al additions. • We defined Cu{sub 33}Al{sub 17} IMC with Al additions using TEM analysis. • We investigated grain refinement with Al additions using EBSD. • We discussed the refinement based on Scheil solidification model.

CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Energy Technology Data Exchange (ETDEWEB)

Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

2016-08-30

Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

The Shear Strength and Fracture Behavior of Sn-Ag- xSb Solder Joints with Au/Ni-P/Cu UBM

Science.gov (United States)

Lee, Hwa-Teng; Hu, Shuen-Yuan; Hong, Ting-Fu; Chen, Yin-Fa

2008-06-01

This study investigates the effects of Sb addition on the shear strength and fracture behavior of Sn-Ag-based solders with Au/Ni-P/Cu underbump metallization (UBM) substrates. Sn-3Ag- xSb ternary alloy solder joints were prepared by adding 0 wt.% to 10 wt.% Sb to a Sn-3.5Ag alloy and joining them with Au/Ni-P/Cu UBM substrates. The solder joints were isothermally stored at 150°C for up to 625 h to study their microstructure and interfacial reaction with the UBM. Single-lap shear tests were conducted to evaluate the mechanical properties, thermal resistance, and failure behavior. The results show that UBM effectively suppressed intermetallic compound (IMC) formation and growth during isothermal storage. The Sb addition helped to refine the Ag3Sn compounds, further improving the shear strength and thermal resistance of the solders. The fracture behavior evolved from solder mode toward the mixed mode and finally to the IMC mode with increasing added Sb and isothermal storage time. However, SnSb compounds were found in the solder with 10 wt.% Sb; they may cause mechanical degradation of the solder after long-term isothermal storage.

Microstructure and adhesion strength of Sn-9Zn-1.5Ag-xBi (x = 0 wt% and 2 wt%)/Cu after electrochemical polarization in a 3.5 wt% NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Li, W.-L. [Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, 415 Chien-Kung Road, Kaohsiung 80782, Taiwan (China); Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Chen, Y.-R.; Chang, K.-M. [Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, 415 Chien-Kung Road, Kaohsiung 80782, Taiwan (China); Liu, C.-Y.; Hon, M.-H. [Department of Materials Science and Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Wang, M.-C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shihchuan 1st Road, Kaohsiung 80728, Taiwan (China)], E-mail: mcwang@kmu.edu.tw

2008-08-11

The microstructure and adhesion strength of the Sn-9Zn-1.5Ag-xBi (x = 0 wt% and 2 wt%)/Cu interface after electrochemical polarization have been studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and pull-off testing. The equilibrium potentials of Sn-9Zn-1.5Ag/Cu and Sn-9Zn-1.5Ag-2Bi/Cu are -1.31 V{sub sce} and -1.22 V{sub sce}, respectively, indicating that Sn-9Zn-1.5Ag-2Bi/Cu has a better corrosion resistance than that of Sn-9Zn-1.5Ag/Cu. The intermetallic compounds of Cu{sub 6}Sn{sub 5}, Cu{sub 5}Zn{sub 8} and Ag{sub 3}Sn are formed at the soldered interface between the Sn-9Zn-1.5Ag-xBi solder alloy and the Cu substrate. The scallop-shaped Cu{sub 6}Sn{sub 5} is close to the Cu substrate and the scallop-shaped Cu{sub 5}Zn{sub 8} is found at the interface in the solder matrix after soldering at 250 deg. C for 10 s. The corrosion products are ZnCl{sub 2}, SnCl{sub 2} and ZnO. On the other hand, pits are also formed on the surface of both solder alloys. The interfacial adhesion strength of the Sn-9Zn-1.5Ag/Cu and Sn-9Zn-1.5Ag-2Bi/Cu decreases from 8.27 {+-} 0.56 MPa and 12.67 {+-} 0.45 MPa to 4.78 {+-} 0.45 MPa and 8.14 {+-} 0.38 MPa, respectively, after electrochemical polarization in a 3.5 wt% NaCl solution. The fracture path of the Sn-9Zn-1.5Ag-2Bi/Cu is along the solder alloy/ZnO and solder/Cu{sub 6}Sn{sub 5} interfaces.

Effect of solder bump size on interfacial reactions during soldering between Pb-free solder and Cu and Ni/ Pd/ Au surface finishes

International Nuclear Information System (INIS)

NorAkmal, F.; Ourdjini, A.; Azmah Hanim, M.A.; Siti Aisha, I.; Chin, Y.T.

2007-01-01

Flip chip technology provides the ultimate in high I/ O-density and count with superior electrical performance for interconnecting electronic components. Therefore, the study of the intermetallic compounds was conducted to investigate the effect of solder bumps sizes on several surface finishes which are copper and Electroless Nickel/ Electroless Palladium/ Immersion Gold (ENEPIG) which is widely used in electronics packaging as surface finish for flip-chip application nowadays. In this research, field emission scanning electron microscopy (FESEM) analysis was conducted to analyze the morphology and composition of intermetallic compounds (IMCs) formed at the interface between the solder and UBM. The IMCs between the SAC lead-free solder with Cu surface finish after reflow were mainly (Cu, Ni) 6 Sn 5 and Cu 6 Sn 5 . While the main IMCs formed between lead-free solder on ENEPIG surface finish are (Ni, Cu) 3 Sn 4 and Ni 3 Sn 4 . The results from FESEM with energy dispersive x-ray (EDX) have revealed that isothermal aging at 150 degree Celsius has caused the thickening and coarsening of IMCs as well as changing them into more spherical shape. The thickness of the intermetallic compounds in both finishes investigated was found to be higher in solders with smaller bump size. From the experimental results, it also appears that the growth rate of IMCs is higher when soldering on copper compared to ENEPIG finish. Besides that, the results also showed that the thickness of intermetallic compounds was found to be proportional to isothermal aging duration. (author)

Metallicity of Ca{sub 2}Cu{sub 6}P{sub 5} with single and double copper-pnictide layers

Energy Technology Data Exchange (ETDEWEB)

Li, Li, E-mail: lil2@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Parker, David [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Chi, Miaofang [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Tsoi, Georgiy M.; Vohra, Yogesh K. [Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294 (United States); Sefat, Athena S., E-mail: sefata@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2016-06-25

We report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca{sub 2}Cu{sub 6}P{sub 5} and compare with CaCu{sub 2-δ}P{sub 2}. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP{sub 4}, similar to Fe–As and Fe–Se layers (with FeAs{sub 4}, FeSe{sub 4}) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both Ca{sub 2}Cu{sub 6}P{sub 5} and CaCu{sub 2-δ}P{sub 2} have temperature-independent magnetic susceptibility and show metallic behavior with no evidence of either magnetic ordering or superconductivity down to 1.8 K CaCu{sub 2-δ}P{sub 2} is slightly off-stoichiometric, with δ = 0.14. Theoretical calculations suggest that unlike Fe 3d-based magnetic materials with a large density of states (DOS) at the Fermi surface, Cu have comparatively low DOS, with the majority of the 3d spectral weight located well below Fermi level. The room-temperature resistivity value of Ca{sub 2}Cu{sub 6}P{sub 5} is only 9 μΩ-cm, due to a substantial plasma frequency and an inferred electron-phonon coupling λ of 0.073 (significantly smaller than that of metallic Cu). Also, microscopy result shows that Cu–Cu distance along the c-axis within the double layers can be very short (2.5 Å), even shorter than metallic elemental copper bond (2.56 Å). The value of dρ/dT for CaCu{sub 2-δ}P{sub 2} at 300 K is approximately three times larger than in Ca{sub 2}Cu{sub 6}P{sub 5}, which suggests the likelihood of stronger electron-phonon coupling. This study shows that the details of Cu–P layers and bonding are important for their transport characteristics. In addition, it emphasizes the remarkable character of the DOS of ‘122’ iron-based materials, despite much structural similarities. - Highlights: • A comprehensive study on Cu-based compound Ca{sub 2}Cu{sub 6}P{sub 5} and compare with CaCu{sub 2-δ}P{sub 2}. • Both materials have layers of

Study on interfacial reaction between lead-free solders and alternative surface finishes

International Nuclear Information System (INIS)

Siti Rabiatul Aisha; Ourdjini, A.; Saliza Osman

2007-01-01

This study investigates the interfacial reactions occurring during reflow soldering between Sn-Ag-Cu lead-free solder and two surface finishes: electroless nickel/ immersion gold (ENIG) and immersion silver (IAg). The study focuses on interfacial reactions evolution and growth kinetics of intermetallic compounds (IMC) formed during soldering and isothermal ageing at 150 degree Celsius for up to 2000 hours. Optical and scanning electron microscopy were used to measure IMC thickness and examine the morphology of IMC respectively, whereas the IMC phases were identified by energy dispersive X-ray analysis (EDX). The results showed that the IMC formed on ENIG finish is thinner compared to that formed on IAg finish. For IAg surface finish, Cu 6 Sn 5 IMCs with scallop morphology are formed at the solder/ surface finish interface after reflow while a second IMC, Cu 3 Sn was formed between the copper and Cu 6 Sn 5 IMC after the isothermal ageing treatment. For ENIG surface finish both (Cu,Ni) 6 Sn 5 and (Ni,Cu) 3 Sn 4 are formed after soldering. Isothermal aging of the solder joints formed on ENIG finish was found to have a significant effect on the morphology of the intermetallics by transforming to more spherical and denser morphology in addition to increase i their thickness with increased ageing time. (author)

Phase composition of rapidly solidified Ag-Sn-Cu dental alloys

International Nuclear Information System (INIS)

Lecong Dzuong; Do Minh Nghiep; Nguyen van Dzan; Cao the Ha

1996-01-01

The phase composition of some rapidly solidified Ag-Sn-Cu dental alloys with different copper contents (6.22 wtpct) has been studied by XRD, EMPA and optical microscopy. The samples were prepared from melt-spun ribbons. The microstructure of the as-quenched ribbons was microcrystalline and consisted of the Ag sub 3 Sn, Ag sub 4 Sn, Cu sub 3 Sn and Cu sub 3 Sn sub 8 phases. Mixing with mercury (amalgamation) led to formation of the Ag sub 2 Hg sub 3, Sn sub 7 Hg and Cu sub 6 Sn sub 5 phases. The amount of copper atoms in the alloys played an important role in phase formation in the amalgams

The effect of graphene on the intermetallic and joint strength of Sn-3.5Ag lead-free solder

Science.gov (United States)

Mayappan, R.; Salleh, A.; Andas, J.

2017-09-01

Solder has been widely used in electronic industry as interconnection for electronic packaging. European Union and Japan have restricted the use of Sn-Pb solder as it contains lead which can harmful to human health and environment. Due to this, many researches have been done in order to find a suitable replacement for the lead solder. Although many lead-free solders are available, the Sn-3.5Ag solder with the addition of graphene seem to be a suitable candidate. In this study, a 0.07 wt% graphene nanosheet was added into the Sn-3.5Ag solder and this composite solder was prepared under powder metallurgy method. The solder was reacted with copper substrate at 250 °C for one minute. For joint strength analysis, two copper strips were soldered together. The solder joint was aged at temperature 100 °C for 500 hours. Scanning Electron Microscope (SEM) was used to observe the interfacial reaction and Instron machine was used to determine the joint strength. Cu6Sn5 intermetallic layer was formed at the interface between the Cu substrate and the solders. Composite solder showed the retardation of the intermetallic growth compared to the plain solder. The thickness value of the intermetallic was used to calculate the growth rate the IMC. The graphene nanosheets added solder has lower growth rate which is 3.86 × 10-15 cm2/s compared to the plain solder 7.15 × 10-15 cm2/s. Shear strength analysis show that the composite solder has higher joint compared to the plain solder.

1D Cu(OH)2 nanorod/2D SnO2 nanosheets core/shell structured array: Covering with graphene layer leads to excellent performances on lithium-ion battery

Science.gov (United States)

Xia, Huicong; Zhang, Jianan; Chen, Zhimin; Xu, Qun

2018-05-01

A facile in-situ growth strategy is employ to achieving the two-dimensional SnO2 nanosheets/one-dimensional Cu(OH)2 nanorods nanoarchitecture on Cu foil current collector (SnO2/Cu(OH)2/Cu foil), follow by modification of a uniform layer of graphene (G). Confine with the graphene layer and unique one-dimensional/two-dimensional the nanoarchitecture, the remarkably enhance electrical conductivity and structural stability of G/SnO2/Cu(OH)2/Cu foil leads to a high reversible capacity of 1080.6 mAh g-1 at a current density of 200 mA g-1, much better than the samples without graphene (512.6 mAh g-1) and Cu(OH)2 nanorod (117.4 mAh g-1). Furthermore, G/SnO2/Cu(OH)2/Cu foil electrode shows high rate capacity (600.8 mAh g-1 at 1 A g-1) and excellent cycling stability (1057.1 mAh g-1 at 200 mA g-1 even after 500 cycles). This work highlights that increasing surface and interface effects with desirable three-dimensional nanoarchitecture can open a new avenue to electrochemical performance improvement in lithium-ion battery for SnO2-base anode.

Influence of alloying element of corrosion of Zr-Nb-Sn-Fe-Cu alloy and impedance characteristics of its oxide layer

International Nuclear Information System (INIS)

Park, S. Y.; Lee, M. H.; Choi, B. K.; Jung, Y. H.; Jung, Y. H.

2000-01-01

As a part of the advanced Zr fuel cladding development program, the autoclave corrosion test was performed on the series of Zr-0.2Nb-1.1Sn-Fe-Cu and Zr-0.4Nb-0.8Sn-Fe-Cu alloys in 70 ppm LiOH solution at 360 .deg. C. The oxide characteristics were investigated by using the Electrochemical Impedance Spectroscope(EIS) method. The corrosion resistance of the alloys was evaluated from the corrosion rate determined as a function of the concentration of main alloying elements such as Nb, Sn, Fe and Cu. The equivalent circuit was composed as a result of the spectrum from EIS measurements on the oxide layer that formed at pro- and post-transition regions. By using the capacitance characteristics of equivalent circuit, the thickness of impervious layer, it's electrical resistance and characteristics of space charge layer were evaluated. The corrosion characteristics of the Zr-Nb-Sn-Fe-Cu alloys were successfully explained by applying the EIS test results

Effects of Ag addition on solid–state interfacial reactions between Sn–Ag–Cu solder and Cu substrate

International Nuclear Information System (INIS)

Yang, Ming; Ko, Yong-Ho; Bang, Junghwan; Kim, Taek-Soo; Lee, Chang-Woo; Li, Mingyu

2017-01-01

Low–Ag–content Sn–Ag–Cu (SAC) solders have attracted much recent attention in electronic packaging for their low cost. To reasonably reduce the Ag content in Pb–free solders, a deep understanding of the basic influence of Ag on the SAC solder/Cu substrate interfacial reaction is essential. Previous studies have discussed the influence of Ag on the interfacial intermetallic compound (IMC) thickness. However, because IMC growth is the joint result of multiple factors, such characterizations do not reveal the actual role of Ag. In this study, changes in interfacial IMCs after Ag introduction were systemically and quantitatively characterized in terms of coarsening behaviors, orientation evolution, and growth kinetics. The results show that Ag in the solder alloy affects the coarsening behavior, accelerates the orientation concentration, and inhibits the growth of interfacial IMCs during solid–state aging. The inhibition mechanism was quantitatively discussed considering the individual diffusion behaviors of Cu and Sn atoms, revealing that Ag inhibits interfacial IMC growth primarily by slowing the diffusion of Cu atoms through the interface. - Highlights: •Role of Ag in IMC formation during Sn–Ag–Cu soldering was investigated. •Ag affects coarsening, crystallographic orientation, and IMC growth. •Diffusion pathways of Sn and Cu are affected differently by Ag. •Ag slows Cu diffusion to inhibit IMC growth at solder/substrate interface.

Effects of Ag addition on solid–state interfacial reactions between Sn–Ag–Cu solder and Cu substrate

Energy Technology Data Exchange (ETDEWEB)

Yang, Ming [Micro-Joining Center, Korea Institute of Industrial Technology (KITECH), Incheon 21999 (Korea, Republic of); Ko, Yong-Ho [Micro-Joining Center, Korea Institute of Industrial Technology (KITECH), Incheon 21999 (Korea, Republic of); Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon 34141 (Korea, Republic of); Bang, Junghwan [Micro-Joining Center, Korea Institute of Industrial Technology (KITECH), Incheon 21999 (Korea, Republic of); Kim, Taek-Soo [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon 34141 (Korea, Republic of); Lee, Chang-Woo, E-mail: cwlee@kitech.re.kr [Micro-Joining Center, Korea Institute of Industrial Technology (KITECH), Incheon 21999 (Korea, Republic of); Li, Mingyu, E-mail: myli@hit.edu.cn [Shenzhen Key Laboratory of Advanced Materials, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055 (China)

2017-02-15

Low–Ag–content Sn–Ag–Cu (SAC) solders have attracted much recent attention in electronic packaging for their low cost. To reasonably reduce the Ag content in Pb–free solders, a deep understanding of the basic influence of Ag on the SAC solder/Cu substrate interfacial reaction is essential. Previous studies have discussed the influence of Ag on the interfacial intermetallic compound (IMC) thickness. However, because IMC growth is the joint result of multiple factors, such characterizations do not reveal the actual role of Ag. In this study, changes in interfacial IMCs after Ag introduction were systemically and quantitatively characterized in terms of coarsening behaviors, orientation evolution, and growth kinetics. The results show that Ag in the solder alloy affects the coarsening behavior, accelerates the orientation concentration, and inhibits the growth of interfacial IMCs during solid–state aging. The inhibition mechanism was quantitatively discussed considering the individual diffusion behaviors of Cu and Sn atoms, revealing that Ag inhibits interfacial IMC growth primarily by slowing the diffusion of Cu atoms through the interface. - Highlights: •Role of Ag in IMC formation during Sn–Ag–Cu soldering was investigated. •Ag affects coarsening, crystallographic orientation, and IMC growth. •Diffusion pathways of Sn and Cu are affected differently by Ag. •Ag slows Cu diffusion to inhibit IMC growth at solder/substrate interface.

Effect of Sn addition on the corrosion behavior of Ti-7Cu-Sn cast alloys for biomedical applications.

Science.gov (United States)

Tsao, L C

2015-01-01

The aim of this study was to investigate the effects of Sn content on the microstructure and corrosion resistance of Ti7CuXSn (x=0-5 wt.%) samples. The corrosion tests were carried out in 0.9 wt.% NaCl solution at 25 °C. The electrochemical corrosion behavior of the Ti7CuXSn alloy samples was evaluated using potentiodynamic polarization curves, electrochemical impedance spectroscopy (EIS), and equivalent circuit analysis. The resulting impedance parameters and polarization curves showed that adding Sn improved the electrochemical corrosion behavior of the Ti7CuXSn alloy. The Ti7CuXSn alloy samples were composed of a dual-layer oxide consisting of an inner barrier layer and an outer porous layer. Copyright © 2014 Elsevier B.V. All rights reserved.

Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

Science.gov (United States)

Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

2016-06-01

While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

Interface between Sn-Sb-Cu solder and copper substrate

Energy Technology Data Exchange (ETDEWEB)

Sebo, P., E-mail: Pavel.Sebo@savba.sk [Institute of Materials and Machine Mechanics, Slovak Academy of Sciences, Racianska 75, 831 02 Bratislava 3 (Slovakia); Svec, P. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Faculty of Materials Science and Technology, Slovak University of Technology, J. Bottu 25, 917 24 Trnava (Slovakia); Janickovic, D.; Illekova, E. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Plevachuk, Yu. [Ivan Franko National University, Department of Metal Physics, 79005 Lviv (Ukraine)

2011-07-15

Highlights: {yields} New lead-free solder materials based on Sn-Sb-Cu were designed and prepared. {yields} Melting and solidification temperatures of the solders have been determined. {yields} Cu-substrate/solder interaction has been analyzed and quantified. {yields} Phases formed at the solder-substrate interface have been identified. {yields} Composition and soldering atmospheres were correlated with joint strength. - Abstract: Influence of antimony and copper in Sn-Sb-Cu solder on the melting and solidification temperatures and on the microstructure of the interface between the solder and copper substrate after wetting the substrate at 623 K for 1800 s were studied. Microstructure of the interface between the solder and copper substrates in Cu-solder-Cu joints prepared at the same temperature for 1800 s was observed and shear strength of the joints was measured. Influence of the atmosphere - air with the flux and deoxidising N{sub 2} + 10H{sub 2} gas - was taken into account. Thermal stability and microstructure were studied by differential scanning calorimetry (DSC), light microscopy, scanning electron microscopy (SEM) with energy-dispersive spectrometry (EDS) and X-ray diffraction (XRD). Melting and solidification temperatures of the solders were determined. An interfacial transition zone was formed by diffusion reaction between solid copper and liquid solder. At the interface Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} phases arise. Cu{sub 3}Sn is adjacent to the Cu substrate and its thickness decreases with increasing the amount of copper in solder. Scallop Cu{sub 6}Sn{sub 5} phase is formed also inside the solder drop. The solid solution Sn(Sb) and SbSn phase compose the interior of the solder drop. Shear strength of the joints measured by push-off method decreases with increasing Sb concentration. Copper in the solder shows even bigger negative effect on the strength.

Sensors of the gas CO in thin film of SnO{sub 2}:Cu; Sensores del gas CO en pelicula delgada de SnO{sub 2}:Cu

Energy Technology Data Exchange (ETDEWEB)

Tirado G, S.; Sanchez Z, F. E., E-mail: tirado@esfm.ipn.mx [IPN, Escuela Superior de Fisica y Matematicas, Unidad Profesional Adolfo Lopez Mateos, San Pedro Zacatenco, 07738 Mexico D. F. (Mexico)

2011-10-15

Thin films of SnO{sub 2}:Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO{sub 2} were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO{sub 2}:Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO{sub 2}:Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

Spin 1/2 Delafossite Honeycomb Compound Cu5SbO6

DEFF Research Database (Denmark)

Climent-Pascual, E.; Norby, Poul; Andersen, Niels Hessel

2012-01-01

Cu5SbO6 is found to have a monoclinic, Delafossite-derived structure consisting of alternating layers of O–Cu(I)–O sticks and magnetic layers of Jahn–Teller distorted Cu(II)O6 octahedra in an edge sharing honeycomb arrangement with Sb(V)O6 octahedra. This yields the structural formula Cu(I)3Cu(II...

Electrodeposition mechanism of quaternary compounds Cu2ZnSnS4: Effect of the additives

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Liu, Jingjun; Ji, Jing; Song, Ye

2018-01-01

The electrodeposition mechanism of pure phase Cu2ZnSnS4 (CZTS) thin film with subsequent annealing was investigated in detail. An electrolyte design principle of quaternary compounds was proposed. The complex ions of Cu(H2C6H5O7)+, Cu2(C6H5O7)+, Zn(C4H5O6)+, Sn(H2C6H5O7)+ and Sn2(C6H5O7)+, which influenced the reduction process and played important roles in co-deposition, were identified by UV spectra. Electrochemical studies indicated that trisodium citrate and tartaric acid could narrow the co-deposition potential range of the four elements to -0.8 V to -1.2 V (vs. SCE). The cause was the synergetic effect that trisodium citrate inhibited the reduction of Cu2+ and Sn2+ and tartaric acid promoted the reduction of Zn2+. The reduction of S2O32- was mainly attributed to the induction effect of the metallic ions, and the H+ dissociated from tartaric acid could also promote the cathode process of S2O32-. The reaction mechanism could be summarized as the following steps: (I) Cu(H2C6H5O7)+, Cu2(C6H5O7)+ → Cu, Sn(H2C6H5O7)+, Sn2(C6H5O7)+ → Sn, Zn(C4H5O6)+ → Zn; (II) the desorption of (H2C6H5O7)- and (C6H5O7)-, and the reduction of S2O32- induced by metallic ions and H+. The mechanism studies provided a path of electrolyte design for multicomponent compounds.

Effect of nano Co reinforcements on the structure of the Sn-3.0Ag-0.5Cu solder in liquid and after reflow solid states

Energy Technology Data Exchange (ETDEWEB)

Yakymovych, Andriy, E-mail: yakymovych@univie.ac.at [Department of Inorganic Chemistry – Functional Materials, University of Vienna, Währinger Str. 42, 1090 Vienna (Austria); Department of Metal Physics, Ivan Franko National University of Lviv, Kyrylo i Mephodiy Str. 8, 79005 Lviv (Ukraine); Mudry, Stepan; Shtablavyi, Ihor [Department of Metal Physics, Ivan Franko National University of Lviv, Kyrylo i Mephodiy Str. 8, 79005 Lviv (Ukraine); Ipser, Herbert [Department of Inorganic Chemistry – Functional Materials, University of Vienna, Währinger Str. 42, 1090 Vienna (Austria)

2016-09-15

Sn-Ag-Cu (SAC) alloys are commonly recognized as lead-free solders employed in the electronics industry. However, some disadvantages in mechanical properties and their higher melting temperatures compared to Pb-Sn solders prompt new research relating to reinforcement of existing SAC solders. One of the ways to reinforce these solder materials is the formation of composites with nanoparticles as filler materials. Accordingly, this study presents structural features of nanocomposite (Sn-3.0Ag-0.5Cu){sub 100−x}(nanoCo){sub x} solders with up to 0.8 wt% nano Co. The effect of nano-sized Co particles was investigated by means of differential thermal analysis (DTA), X-ray diffraction (XRD) in both liquid and solid states, and scanning electron microscopy (SEM). The experimental data of DTA are compared with available literature data for bulk Sn-3.0Ag-0.5Cu alloy to check the capability of minor nano-inclusions to decrease the melting temperature of the SAC solder. The combination of structural data in liquid and solid states provides important information about the structural transformations of liquid Sn-3.0Ag-0.5Cu alloys caused by minor Co additions and the phase formation during crystallization. Furthermore, scanning electron microscopy has shown the mutual substitution of Co and Cu atoms in the Cu{sub 6}Sn{sub 5} and CoSn{sub 3} phases, respectively. - Highlights: • Differential thermal analysis of nanocomposite (Sn-3.0Ag-0.5Cu){sub 100−x}(nanoCo){sub x} alloys. • Structural transformations of liquid Sn-3.0Ag-0.5Cu solder by minor Co additions. • Structure data of the solid quaternary (Sn-3.0Ag-0.5Cu){sub 100−x}(Co){sub x} alloys. • Substitution of Co and Cu atoms in the Cu{sub 6}Sn{sub 5} and CoSn{sub 3} phases.

Phase Equilibria of the Sn-Ni-Si Ternary System and Interfacial Reactions in Sn-(Cu)/Ni-Si Couples

Science.gov (United States)

Fang, Gu; Chen, Chih-chi

2015-07-01

Interfacial reactions in Sn/Ni-4.5 wt.%Si and Sn-Cu/Ni-4.5 wt.%Si couples at 250°C, and Sn-Ni-Si ternary phase equilibria at 250°C were investigated in this study. Ni-Si alloys, which are nonmagnetic, can be regarded as a diffusion barrier layer material in flip chip packaging. Solder/Ni-4.5 wt.%Si interfacial reactions are crucial to the reliability of soldered joints. Phase equilibria information is essential for development of solder/Ni-Si materials. No ternary compound is present in the Sn-Ni-Si ternary system at 250°C. Extended solubility of Si in the phases Ni3Sn2 and Ni3Sn is 3.8 and 6.1 at.%, respectively. As more Si dissolves in these phases their lattice constants decrease. No noticeable ternary solubility is observed for the other intermetallics. Interfacial reactions in solder/Ni-4.5 wt.%Si are similar to those for solder/Ni. Si does not alter the reaction phases. No Si solubility in the reaction phases was detected, although rates of growth of the reaction phases were reduced. Because the alloy Ni-4.5 wt.%Si reacts more slowly with solders than pure Ni, the Ni-4.5 wt.%Si alloy could be a potential new diffusion barrier layer material for flip chip packaging.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

2014-01-01

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

Reference Data for the Density, Viscosity, and Surface Tension of Liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn Eutectic Alloys

Science.gov (United States)

Dobosz, Alexandra; Gancarz, Tomasz

2018-03-01

The data for the physicochemical properties viscosity, density, and surface tension obtained by different experimental techniques have been analyzed for liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn eutectic alloys. All experimental data sets have been categorized and described by the year of publication, the technique used to obtain the data, the purity of the samples and their compositions, the quoted uncertainty, the number of data in the data set, the form of data, and the temperature range. The proposed standard deviations of liquid eutectic Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn alloys are 0.8%, 0.1%, 0.5%, 0.2%, and 0.1% for the density, 8.7%, 4.1%, 3.6%, 5.1%, and 4.0% for viscosity, and 1.0%, 0.5%, 0.3%, N/A, and 0.4% for surface tension, respectively, at a confidence level of 95%.

Developments of high strength Bi-containing Sn0.7Cu lead-free solder alloys prepared by directional solidification

Energy Technology Data Exchange (ETDEWEB)

Hu, Xiaowu, E-mail: xwhmaterials@aliyun.com [School of Mechanical Electrical Engineering, Nanchang University, Nanchang 330031 (China); Li, Yulong [School of Mechanical Electrical Engineering, Nanchang University, Nanchang 330031 (China); Liu, Yi [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Min, Zhixian [China Electronics Technology Group Corporation No. 38 Research Institute, Hefei 230088 (China)

2015-03-15

Highlights: • The Sn0.7Cu–xBi solder alloys were directionally solidified. • Both spacing and diameter of fibers decreased with increasing solidification rate. • The UTS and YS first increased with increased solidification rate, then decreased. • The UTS and YS of Sn0.7Cu–xBi first increased with increased Bi content. - Abstract: Bi-containing Sn0.7Cu (SC) eutectic solder alloys were prepared and subjected to directional solidification, through which new types of fiber reinforced eutectic composites were generated. The influences of Bi addition on the microstructures and tensile properties of directionally solidified (DS) Bi-containing eutectic SC lead-free solder alloys have been investigated by using differential scanning calorimetry (DSC), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and a tensile testing machine. The experimental results showed that addition of Bi could effectively reduce both the melting temperature and undercooling of SC solder alloy. The microstructures of DS SC–xBi solder alloys were composed of Sn-rich phase (β) and Cu{sub 6}Sn{sub 5} fiber. No other intermetallic compounds (IMCs) with Bi content were observed in the solder matrix for SC solder alloys with various Bi contents. Both fiber spacing and diameter all decreased gradually with increasing growth rate and/or Bi content. Besides, the regularity of Cu{sub 6}Sn{sub 5} fibers alignment also decreased with increasing growth rate, too. The tensile strengths of the SC–xBi eutectic solder alloys varied parabolically with growth rate (R). When R was 60 μm/s, maximum tensile strengths of 43.8, 55.2 and 56.37 MPa were reached for SC, SC0.7Bi and SC1.3Bi solder alloys. A comparison of tensile strength of SC, SC0.7Bi and SC1.3Bi with the same R indicated that the tensile strength increased with increasing Bi content, which was attributed to the presence of Bi and its role in refining microstructure and solid solution strengthening.

Obtención y caracterización del polvo de bronce Cu88Sn6,5Zn4Pb1,5 para aplicaciones en cojinetes

Directory of Open Access Journals (Sweden)

Krivij, Natalia

2000-12-01

Full Text Available The aim of this work is the development of alloyed bronze powder Cu88Sn6,5Zn4Pb1,5 to substitute the material used in the manufacture of bearings with antifriction properties. The physical and chemical characterization of the powder has been carried out and an experimental 2³ design to determine the optimal parameters of the technological process of powder sintering has been used in the specific case of sealed bearing manufacture of the subset shaft-seal of the open cooling compressor.

El trabajo tiene como objetivo el desarrollo del polvo de bronce aleado Cu88Sn6,5Zn4Pb1,5 para sustituir el material originalmente utilizado en la fabricación de cojinetes con propiedades antifricción. Se realizó la caracterización física y química del polvo, y se empleó un diseño experimental 2³ con vistas a determinar los parámetros óptimos del proceso tecnológico de sinterización del polvo, para el caso específico de la fabricación del cojinete de sellaje del subconjunto eje-sello del compresor abierto de refrigeración.

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

Science.gov (United States)

Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

2011-01-01

We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples

International Nuclear Information System (INIS)

Pan, Hung-Chun; Hsieh, Tsung-Eong

2012-01-01

Highlights: ► Diffusion barrier features, activation energies of IMC growth and mechanical behaviors of electroless Co(W,P)/PbSn joints. ► Amorphous Co(W,P) is a sacrificial- plus stuffed-type barrier while polycrystalline Co(W,P) is a sacrificial-type barrier. ► Ductile mode dominates the failure of Co(W,P)/PbSn joints. ► Phosphorus content of Co(W,P) is crucial to the barrier capability and microstructure evolution at Co(W,P)/PbSn interface. ► Diffusion barrier capability is governed by the nature of chemical bonds, rather than the crystallinity of materials. - Abstract: Diffusion barrier characteristics, activation energy (E a ) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as α-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/α-Co(W,P) samples subjected to liquid-state aging at 250 °C. In contrast, IMCs resided on the P-rich layer in PbSn/α-Co(W,P) samples subjected to solid-state aging at 150 °C. Thick IMCs neighboring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. α-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E a 's for PbSn/α-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both α- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4 solar cells

International Nuclear Information System (INIS)

Hironiwa, Daisuke; Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki; Tang, Zeguo; Chantana, Jakapan; Minemoto, Takashi

2015-01-01

Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells were fabricated with an annealing treatment before the deposition of buffer layers to improve their photovoltaic performance. The CZTSSe absorbers were produced by sulfurization and selenization of metallic precursors. The efficiency of the solar cells increased from 5.5% without the annealing treatment to 8.8% with the annealing treatment at a temperature of 200 °C before buffer layer fabrication. Photoluminescence (PL) measurements revealed that the density of defects in the CZTSSe absorber that acted as non-radiative recombination centers decreased with the annealing treatment. The PL peak intensity exhibited a linear relationship with the open circuit voltage and the fill factor. In addition, the carrier density and hole mobility of the CZTSSe absorbers, which were respectively investigated by capacitance-voltage and Hall effect measurements, increased with the annealing treatment, thus improving cell performance. - Highlights: • Cu 2 ZnSn(S,Se) 4 is fabricated by sulfurization and selenization. • The annealing treatment can effectively improve the cell performance. • The defect acting as recombination is decreased by annealing treatment. • Carrier density and hole mobility is increased by annealing treatment

Sensors of the gas CO in thin film of SnO2:Cu

International Nuclear Information System (INIS)

Tirado G, S.; Sanchez Z, F. E.

2011-10-01

Thin films of SnO 2 :Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO 2 were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO 2 :Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO 2 :Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

Electrical and impedance spectroscopy analysis of sol-gel derived spin coated Cu2ZnSnS4 solar cell

Science.gov (United States)

Gupta, Goutam Kumar; Garg, Ashish; Dixit, Ambesh

2018-01-01

We carried out electrical and impedance studies on solution derived Al:ZnO/ZnO/CdS/Cu2ZnSnS4/Mo/Glass multilayered solar cell structures to understand their impact on photovoltaic performance. The Cu2ZnSnS4 layer is synthesized on a molybdenum (Mo) coated soda lime glass substrate as an absorber and characterized intensively to optimize the absorber physical properties. The optimized Cu2ZnSnS4 is p-type with 5.8 × 1017 cm-3 hole carrier concentration. The depletion width of the junction is around 20.5 nm and the diffusion capacitance is ˜35.5 nF for these devices. We observed relatively large minority carrier life time ˜23 μs for these structures using open voltage decay analysis. The measured Cu2ZnSnS4/MoS2 and Cu2ZnSnS4/CdS interface resistances are 7.6 kΩ and 12.5 kΩ, respectively. The spatial inhomogeneities are considered and the corresponding resistance is ˜11.4 kΩ. The impedance measurements suggest that in conjunction with series resistance ˜350 Ω, the interface and spatial inhomogeneity resistances also give a significant contribution to the photovoltaic performance.

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

Science.gov (United States)

Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

2016-12-01

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

Energy Technology Data Exchange (ETDEWEB)

Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

2015-09-05

Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

KAUST Repository

Al-Jawhari, Hala A.

2013-10-09

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

Abnormal accumulation of intermetallic compound at cathode in a SnAg3.0Cu0.5 lap joint during electromigration

International Nuclear Information System (INIS)

Li Mingyu; Chang Hong; Pang Xiaochao; Wang Ling; Fu Yonggao

2011-01-01

Interfacial reactions in a SnAg 3.0 Cu 0.5 /Cu lap joint for naked and encompassed specimens were investigated contrastively under electric current stressing. After applying a constant direct current at 6.5 A for 144 h, an abnormal accumulation of bulk Cu 6 Sn 5 intermetallic compound was found at the cathode for the naked specimen. But normal polarization phenomenon arose for the encompassed specimen at the same current density for 504 h. The abnormal accumulation phenomenon was explained by the mechanism that thermomigration and stress migration induced by temperature gradient dominated the migration process. A three-dimensional joint simulation model was designed to demonstrate how current crowding and temperature gradient can enhance the local atomic flux.

Size effects in tin-based lead-free solder joints: Kinetics of bond formation and mechanical characteristics

Science.gov (United States)

Abdelhadi, Ousama Mohamed Omer

Continuous miniaturization of microelectronic interconnects demands smaller joints with comparable microstructural and structural sizes. As the size of joints become smaller, the volume of intermetallics (IMCs) becomes comparable with the joint size. As a result, the kinetics of bond formation changes and the types and thicknesses of IMC phases that form within the constrained region of the bond varies. This dissertation focuses on investigating combination effects of process parameters and size on kinetics of bond formation, resulting microstructure and the mechanical properties of joints that are formed under structurally constrained conditions. An experiment is designed where several process parameters such as time of bonding, temperature, and pressure, and bond thickness as structural chracteristic, are varied at multiple levels. The experiment is then implemented on the process. Scanning electron microscope (SEM) is then utilized to determine the bond thickness, IMC phases and their thicknesses, and morphology of the bonds. Electron backscatter diffraction (EBSD) is used to determine the grain size in different regions, including the bulk solder, and different IMC phases. Physics-based analytical models have been developed for growth kinetics of IMC compounds and are verified using the experimental results. Nanoindentation is used to determine the mechanical behavior of IMC phases in joints in different scales. Four-point bending notched multilayer specimen and four-point bending technique were used to determine fracture toughness of the bonds containing IMCs. Analytical modeling of peeling and shear stresses and fracture toughness in tri-layer four-point bend specimen containing intermetallic layer was developed and was verified and validated using finite element simulation and experimental results. The experiment is used in conjunction with the model to calculate and verify the fracture toughness of Cu6Sn5 IMC materials. As expected two different IMC phases

A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

International Nuclear Information System (INIS)

Huang, Y.J.; Shen, J.; Sun, J.F.; Yu, X.B.

2007-01-01

The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti 41.5 Zr 2.5 Hf 5 Cu 42.5-x Ni 7.5 Si 1 Sn x (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy. The activation energies for glass transition and crystallization for Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy also possesses superior mechanical properties

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

Science.gov (United States)

Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

2014-02-15

Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

Aging treatment characteristics of solder bump joint for high reliability optical module

International Nuclear Information System (INIS)

Kim, Kyung-Seob; Yu, Chung-Hee; Yang, Jun-Mo

2004-01-01

The joint strength and fracture surfaces of Sn-37 mass% Pb and Au stud bumps for photo diode packages after isothermal aging testing were studied experimentally. Al/Au stud bumps and Cu/Sn-37 mass% Pb solders were adopted, and aged for up to 900 h to analyze the effect of intermetallic compound (IMC). The joint strength decreased with aging time. The diffraction patterns of Cu 6 Sn 5 , scallop-shaped IMCs, and planar-shaped Cu 3 Sn were characterized using transmission electron microscopy (TEM). The formation of Kirkendall voids and the growth of IMCs at the solder were found to be a possible mechanism for joint strength reduction

Incorporation of Interfacial Intermetallic Morphology in Fracture Mechanism Map for Sn-Ag-Cu Solder Joints

Science.gov (United States)

Huang, Z.; Kumar, P.; Dutta, I.; Sidhu, R.; Renavikar, M.; Mahajan, R.

2014-01-01

A fracture mechanism map (FMM) is a powerful tool which correlates the fracture behavior of a material to its microstructural characteristics in an explicit and convenient way. In the FMM for solder joints, an effective thickness of the interfacial intermetallic compound (IMC) layer ( t eff) and the solder yield strength ( σ ys,eff) are used as abscissa and ordinate axes, respectively, as these two predominantly affect the fracture behavior of solder joints. Earlier, a definition of t eff, based on the uniform thickness of IMC ( t u) and the average height of the IMC scallops ( t s), was proposed and shown to aptly explain the fracture behavior of solder joints on Cu. This paper presents a more general definition of t eff that is more widely applicable to a range of metallizations, including Cu and electroless nickel immersion gold (ENIG). Using this new definition of t eff, mode I FMM for SAC387/Cu joints has been updated and its validity was confirmed. A preliminary FMM for SAC387/Cu joints with ENIG metallization is also presented.

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

International Nuclear Information System (INIS)

Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

2013-01-01

Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

Science.gov (United States)

Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

2012-04-01

In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

Multifilamentary Cu-Nb3Sn superconductor wires

International Nuclear Information System (INIS)

Rodrigues, D.; Pinatti, D.G.

1990-01-01

This paper reports on one of the main technological problems concerning Nb 3 Sn superconducting wires production which is the optimization of heat treatments for the formation of the A-15 intermetallic compound. At the present work, Nb 3 Sn superconducting wire is produced by solid-liquid diffusion method which increases considerably the critical current values of the superconductor. Through this method, niobium, copper and Sn 7% wt Cu alloy are kept in the pure state. Thus, the method dispenses intermediate heat treatments of recrystallization during the manufacturing process of the wire. After the wire was ready, optimization work of heat treatments was accomplished aiming to obtain its best superconducting characteristics, Measurement of critical temperature, critical current versus magnetic field, normal and at room temperature resistivity were performed, as well as scanning electron microscopy for determination of Nb 3 Sn layers and transmission electron microscopy measurements of redetermining the grain sizes in Nb 3 Sn formed in each treatment. It was obtained critical current densities of 1.8 x 10 6 A/cm 2 in the Nb 3 Sn layer, at 10 Teslas and 4.2 K. The samples were analyzed by employing the superconducting collective flux pinning theories and a satisfactory agreement between the experimental and theoretical data was attained. The production process and the small size of the filaments used made a successful optimization of the wire possible

Rapid Solidification of Sn-Cu-Al Alloys for High-Reliability, Lead-Free Solder: Part I. Microstructural Characterization of Rapidly Solidified Solders

Science.gov (United States)

Reeve, Kathlene N.; Choquette, Stephanie M.; Anderson, Iver E.; Handwerker, Carol A.

2016-12-01

Particles of Cu x Al y in Sn-Cu-Al solders have previously been shown to nucleate the Cu6Sn5 phase during solidification. In this study, the number and size of Cu6Sn5 nucleation sites were controlled through the particle size refinement of Cu x Al y via rapid solidification processing and controlled cooling in a differential scanning calorimeter. Cooling rates spanning eight orders of magnitude were used to refine the average Cu x Al y and Cu6Sn5 particle sizes down to submicron ranges. The average particle sizes, particle size distributions, and morphologies in the microstructures were analyzed as a function of alloy composition and cooling rate. Deep etching of the samples revealed the three-dimensional microstructures and illuminated the epitaxial and morphological relationships between the Cu x Al y and Cu6Sn5 phases. Transitions in the Cu6Sn5 particle morphologies from faceted rods to nonfaceted, equiaxed particles were observed as a function of both cooling rate and composition. Initial solidification cooling rates within the range of 103 to 104 °C/s were found to be optimal for realizing particle size refinement and maintaining the Cu x Al y /Cu6Sn5 nucleant relationship. In addition, little evidence of the formation or decomposition of the ternary- β phase in the solidified alloys was noted. Solidification pathways omitting the formation of the ternary- β phase agreed well with observed room temperature microstructures.

CuLi2Sn and Cu2LiSn: Characterization by single crystal XRD and structural discussion towards new anode materials for Li-ion batteries.

Science.gov (United States)

Fürtauer, Siegfried; Effenberger, Herta S; Flandorfer, Hans

2014-12-01

The stannides CuLi 2 Sn (CSD-427095) and Cu 2 LiSn (CSD-427096) were synthesized by induction melting of the pure elements and annealing at 400 °C. The phases were reinvestigated by X-ray powder and single-crystal X-ray diffractometry. Within both crystal structures the ordered CuSn and Cu 2 Sn lattices form channels which host Cu and Li atoms at partly mixed occupied positions exhibiting extensive vacancies. For CuLi 2 Sn, the space group F-43m. was verified (structure type CuHg 2 Ti; a =6.295(2) Å; wR 2 ( F ²)=0.0355 for 78 unique reflections). The 4( c ) and 4( d ) positions are occupied by Cu atoms and Cu+Li atoms, respectively. For Cu 2 LiSn, the space group P 6 3 / mmc was confirmed (structure type InPt 2 Gd; a =4.3022(15) Å, c =7.618(3) Å; wR 2 ( F ²)=0.060 for 199 unique reflections). The Cu and Li atoms exhibit extensive disorder; they are distributed over the partly occupied positions 2( a ), 2( b ) and 4( e ). Both phases seem to be interesting in terms of application of Cu-Sn alloys as anode materials for Li-ion batteries.

Effect of rare earth Ce on the fatigue life of SnAgCu solder joints in WLCSP device using FEM and experiments

International Nuclear Information System (INIS)

Zhang, Liang; Han, Ji-guang; Guo, Yong-huan; He, Cheng-wen

2014-01-01

With the addition of 0.03 wt% rare earth Ce, in our previous works, the properties of SnAgCu solder were enhanced obviously. Based on the Garofalo–Arrhenius creep constitutive model, finite element method was used to simulate the stress–strain response during thermal cycle loading, and combined with the fatigue life prediction models, the fatigue life of SnAgCu/SnAgCuCe solder joints was calculated respectively, which can demonstrate the effect of the rare earth Ce on the fatigue life of SnAgCu solder joints. The results indicated that the maximum stress–strain can be found on the top surface of the corner solder joint, and the warpage of the PCB substrate occurred during thermal cycle loading. The trends obtained from modeling results have a good agreement with the experimental data reported in the literature for WLCSP devices. In addition, the stress–strain of SnAgCuCe solder joints is lower than that of SnAgCu solder joints. The thermal fatigue lives of solder joints calculated based on the creep model and creep strain energy density model show that the fatigue life of SnAgCuCe solder joints is higher than the SnAgCu solder joints. The fatigue life of SnAgCuCe solder joints can be enhanced significantly with the addition of Ce, is 30.2% higher than that of SnAgCu solder joints, which can be attributed to the CeSn 3 particles formed resisting the motion of dislocation; moreover, the refinement of microstructure and the IMC sizes also contribute to the enhancement of fatigue life, which elucidates that SnAgCuCe solder can be utilized in electronic industry with high reliability replacing the SnAgCu solder

A simple route to Cu{sub x}Sn{sub (100−x)} intermetallic nanoparticle catalyst for ultra-phenol hydroxylation

Energy Technology Data Exchange (ETDEWEB)

Pithakratanayothin, Sakollapath [The Petroleum and Petrochemical College and Center of Excellence on Petrochemical and Materials Technology, Chulalongkorn University, Bangkok 10330 (Thailand); Tongsri, Ruangdaj [Powder Metallurgy Research and Development Unit - PM-RDU, National Metal and Materials Technology Center, Pathum Thani 12120 (Thailand); Chaisuwan, Thanyalak [The Petroleum and Petrochemical College and Center of Excellence on Petrochemical and Materials Technology, Chulalongkorn University, Bangkok 10330 (Thailand); Wongkasemjit, Sujitra, E-mail: dsujitra@chula.ac.th [The Petroleum and Petrochemical College and Center of Excellence on Petrochemical and Materials Technology, Chulalongkorn University, Bangkok 10330 (Thailand)

2016-09-15

A practical methodology and novel, economical materials were proposed to successfully prepare nanoparticle catalysts for phenol hydroxylation. The preparation was carried out via mechanical alloying (MA) of Cu{sub x}Sn{sub (100−x)} powder mixtures (where x = 30, 50, 70, and 100%wt). The mechanical alloyed nanoparticles were characterized using various techniques. X-ray diffraction patterns indicated that η-Cu{sub 6}Sn{sub 5}, ε-Cu{sub 3}Sn, and CuSn phases could be formed in the mechanical alloyed Cu{sub x}Sn{sub (100−x)} materials. Transmission electron micrographs and selected area electron diffraction patterns confirmed the presence of η-Cu{sub 6}Sn{sub 5}, ε-Cu{sub 3}Sn, and CuSn phases. Activity of the catalysts, using the optimal conditions of 70 °C reaction temperature for 1 h, 50 mg of Cu{sub 0.5}Sn{sub 0.5}, and 1:3 phenol:H{sub 2}O{sub 2} ratio, provided more than 98% conversion with 70% catechol (CAT) and 29% hydroquinone (HQ). Experimental results suggested that the presence of the ε-Cu{sub 3}Sn phase gave higher activity while Sn reduced benzoquinone (BQ) to HQ. The catalyst maintained its stability with no structural collapse for more than 24 h. - Highlights: • Cu{sub x}Sn{sub y} intermetallic as a catalyst was successfully synthesized via mechanical alloying. • Cu{sub x}Sn{sub y} intermetallics promoted impressive phenol hydroxylation. • 98% conversion was achieved with high selectivity of catechol.

Inkjet?Printed Cu2ZnSn(S, Se)4 Solar Cells

OpenAIRE

Lin, Xianzhong; Kavalakkatt, Jaison; Lux?Steiner, Martha Ch.; Ennaoui, Ahmed

2015-01-01

Cu2ZnSn(S, Se)4?based solar cells with total area (0.5 cm2) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu?Zn?Sn?S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Inkjet-Printed Cu2ZnSn(S, Se)4 Solar Cells.

Science.gov (United States)

Lin, Xianzhong; Kavalakkatt, Jaison; Lux-Steiner, Martha Ch; Ennaoui, Ahmed

2015-06-01

Cu 2 ZnSn(S, Se) 4 -based solar cells with total area (0.5 cm 2 ) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu-Zn-Sn-S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Electrochemical Behavior of Sn-9Zn- xTi Lead-Free Solders in Neutral 0.5M NaCl Solution

Science.gov (United States)

Wang, Zhenghong; Chen, Chuantong; Jiu, Jinting; Nagao, Shijo; Nogi, Masaya; Koga, Hirotaka; Zhang, Hao; Zhang, Gong; Suganuma, Katsuaki

2018-05-01

Electrochemical techniques were employed to study the electrochemical corrosion behavior of Sn-9Zn- xTi ( x = 0, 0.05, 0.1, 0.2 wt.%) lead-free solders in neutral 0.5M NaCl solution, aiming to figure out the effect of Ti content on the corrosion properties of Sn-9Zn, providing information for the composition design of Sn-Zn-based lead-free solders from the perspective of corrosion. EIS results reveal that Ti addition was involved in the corrosion product layer and changed electrochemical interface behavior from charge transfer control process to diffusion control process. The trace amount of Ti addition (0.05 wt.%) can refine the microstructure and improve the corrosion resistance of Sn-9Zn solder, evidenced by much lower corrosion current density ( i corr) and much higher total resistance ( R t). Excess Ti addition (over 0.1 wt.%) led to the formation of Ti-containing IMCs, which were confirmed as Sn3Ti2 and Sn5Ti6, deteriorating the corrosion resistance of Sn-9Zn- xTi solders. The main corrosion products were confirmed as Sn3O(OH)2Cl2 mixed with small amount of chlorine/oxide Sn compounds.

A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

Energy Technology Data Exchange (ETDEWEB)

Huang, Y.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shen, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: junshen@hit.edu.cn; Sun, J.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yu, X.B. [Lab of Energy Science and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: yuxuebin@hotmail.com

2007-01-16

The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 42.5-x}Ni{sub 7.5}Si{sub 1}Sn {sub x} (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy. The activation energies for glass transition and crystallization for Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy also possesses superior mechanical properties.

Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

International Nuclear Information System (INIS)

Chang, Shao-Wei; Ishikawa, Kaoru; Sugiyama, Mutsumi

2015-01-01

We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se 2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 10 15 to 10 17 cm −1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 10 17 to 10 11 cm −1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe 2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se 2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe 2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

Determination of the enthalpy of fusion and thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys

International Nuclear Information System (INIS)

Zhai, W.; Zhou, K.; Hu, L.; Wei, B.

2016-01-01

Highlights: • The increasing Sn content reduces the liquidus temperature. • High Sn content results in lower enthalpy of fusion by polynomial functions. • The thermal diffusivity drops from the solid toward the semi-solid state. • Undercoolability of alloys with primary Cu_2Sb phase is stronger than others. - Abstract: The liquidus and solidus temperatures, enthalpy of fusion, and the temperature dependence of thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys were systematically measured by DSC and laser flash methods. It is found that both the liquidus temperature and the enthalpy of fusion decrease with the rise of Sn content, and their relationships with alloy composition were established by polynomial functions. The thermal diffusivity usually drops from the solid toward the semi-solid state. The undercoolability of those liquid Cu_6_0_−_xSn_xSb_4_0 alloys with primary Cu_2Sb solid phase is stronger than the others with primary β(SnSb) intermetallic compound, and the increase of cooling rate facilitates further undercooling. Microstructural observation indicates that both of the primary Cu_2Sb and β(SnSb) intermetallic compounds in ternary Cu_6_0_−_xSn_xSb_4_0 alloys grow in faceted mode, and develop into coarse flakes and polygonal blocks.

Structural stability of ternary C22–Zr6X2Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr6Sn2T′ (T′=Fe, Co, Ni, Cu) compounds

International Nuclear Information System (INIS)

Colinet, Catherine; Crivello, Jean-Claude; Tedenac, Jean-Claude

2013-01-01

The crystal and electronic structures, and the thermodynamic properties of Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe 2 P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr 6 Sb 2 Co compound. Display Omitted - Highlights: • Structural stability of Zr 6 X 2 T′ compounds (X: p element, T′: late transition metal) in the Fe 2 P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

Rapid Solidification of Sn-Cu-Al Alloys for High-Reliability, Lead-Free Solder: Part II. Intermetallic Coarsening Behavior of Rapidly Solidified Solders After Multiple Reflows

Science.gov (United States)

Reeve, Kathlene N.; Choquette, Stephanie M.; Anderson, Iver E.; Handwerker, Carol A.

2016-12-01

Controlling the size, dispersion, and stability of intermetallic compounds in lead-free solder alloys is vital to creating reliable solder joints regardless of how many times the solder joints are melted and resolidified (reflowed) during circuit board assembly. In this article, the coarsening behavior of Cu x Al y and Cu6Sn5 in two Sn-Cu-Al alloys, a Sn-2.59Cu-0.43Al at. pct alloy produced via drip atomization and a Sn-5.39Cu-1.69Al at. pct alloy produced via melt spinning at a 5-m/s wheel speed, was characterized after multiple (1-5) reflow cycles via differential scanning calorimetry between the temperatures of 293 K and 523 K (20 °C and 250 °C). Little-to-no coarsening of the Cu x Al y particles was observed for either composition; however, clustering of Cu x Al y particles was observed. For Cu6Sn5 particle growth, a bimodal size distribution was observed for the drip atomized alloy, with large, faceted growth of Cu6Sn5 observed, while in the melt spun alloy, Cu6Sn5 particles displayed no significant increase in the average particle size, with irregularly shaped, nonfaceted Cu6Sn5 particles observed after reflow, which is consistent with shapes observed in the as-solidified alloys. The link between original alloy composition, reflow undercooling, and subsequent intermetallic coarsening behavior was discussed by using calculated solidification paths. The reflowed microstructures suggested that the heteroepitaxial relationship previously observed between the Cu x Al y and the Cu6Sn5 was maintained for both alloys.

Evaluation of Die-Attach Bonding Using High-Frequency Ultrasonic Energy for High-Temperature Application

Science.gov (United States)

Lee, Jong-Bum; Aw, Jie-Li; Rhee, Min-Woo

2014-09-01

Room-temperature die-attach bonding using ultrasonic energy was evaluated on Cu/In and Cu/Sn-3Ag metal stacks. The In and Sn-3Ag layers have much lower melting temperatures than the base material (Cu) and can be melted through the heat generated during ultrasonic bonding, forming intermetallic compounds (IMCs). Samples were bonded using different ultrasonic powers, bonding times, and forces and subsequently aged at 300°C for 500 h. After aging, die shear testing was performed and the fracture surfaces were inspected by scanning electron microscopy. Results showed that the shear strength of Cu/In joints reached an upper plateau after 100 h of thermal aging and remained stable with aging time, whereas that of the Cu/Sn-3Ag joints decreased with increasing aging time. η-Cu7In4 and (Cu,Au)11In9 IMCs were observed at the Cu/In joint, while Cu3Sn and (Ag,Cu)3Sn IMCs were found at the Cu/Sn-3Ag joint after reliability testing. As Cu-based IMCs have high melting temperatures, they are highly suitable for use in high-temperature electronics, but can be formed at room temperature using an ultrasonic approach.

Fabrication, characterization and application of Cu{sub 2}ZnSn(S,Se){sub 4} absorber layer via a hybrid ink containing ball milled powders

Energy Technology Data Exchange (ETDEWEB)

Li, Chunran [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); College of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Yao, Bin, E-mail: binyao@jlu.edu.cn [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); Li, Yongfeng, E-mail: liyongfeng@jlu.edu.cn [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); Xiao, Zhenyu [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Ding, Zhanhui [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); Zhao, Haifeng; Zhang, Ligong; Zhang, Zhenzhong [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033 (China)

2015-09-15

Highlights: • CZTS powders are prepared from binary sulfides by a low cost ball milling process. • Elaborated on phase evolution and formation mechanism of CZTS. • Proposed a hybrid ink approach to resolve difficulty in deposition of CZTS film. • CZTSSe solar cells with highest efficiency of 4.2% are fabricated. • Small-grained CZTS layer hinders the collection of minority carriers. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) powder with kesterite structure was prepared by ball milling of mixture of Cu{sub 2}S, ZnS and SnS{sub 2} powders for more than 15 h. By dispersing the milled CZTS powder in a Cu-, Zn- and Sn-chalcogenide precursor solution, a hybrid ink was fabricated. With the hybrid ink, a precursor CZTS film was deposited on Mo coated soda-lime glass by spin-coating. In order to obtain Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber film with kesterite structure, the CZTS film was annealed at 560 °C for 15 min in Se ambient. It is demonstrated that the annealed film is dominated by a thick layer of kesterite CZTSSe with larger grain size and Cu{sub 8}Fe{sub 3}Sn{sub 2}(S,Se){sub 12} impurity phase with the exception of a very thin layer of kesterite CZTS with smaller grain size at interface between the CZTSSe and Mo layers. Solar cell device was fabricated by using the annealed CZTSSe film as absorber layer, and its conversion efficiency reached 4.2%. Mechanism of formation of the kesterite CZTS powder and CZTSSe film as well as effect of impurity phases on conversion efficiency are discussed in the present paper. The present results suggest that the hybrid ink approach combining with ball milling is a simple, low cost and promising method for preparation of kesterite CZTSSe absorber film and CZTSSe-based solar cell.

Stability of molybdenum nanoparticles in Sn-3.8Ag-0.7Cu solder during multiple reflow and their influence on interfacial intermetallic compounds

Energy Technology Data Exchange (ETDEWEB)

Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Arafat, M.M., E-mail: arafat_mahmood@yahoo.com; Johan, Mohd Rafie, E-mail: mrafiej@um.edu.my

2012-02-15

This work investigates the effects of molybdenum nanoparticles on the growth of interfacial intermetallic compound between Sn-3.8Ag-0.7Cu solder and copper substrate during multiple reflow. Molybdenum nanoparticles were mixed with Sn-3.8Ag-0.7Cu solder paste by manual mixing. Solder samples were reflowed on a copper substrate in a 250 Degree-Sign C reflow oven up to six times. The molybdenum content of the bulk solder was determined by inductive coupled plasma-optical emission spectrometry. It is found that upon the addition of molybdenum nanoparticles to Sn-3.8Ag-0.7Cu solder, the interfacial intermetallic compound thickness and scallop diameter decreases under all reflow conditions. Molybdenum nanoparticles do not appear to dissolve or react with the solder. They tend to adsorb preferentially at the interface between solder and the intermetallic compound scallops. It is suggested that molybdenum nanoparticles impart their influence on the interfacial intermetallic compound as discrete particles. The intact, discrete nanoparticles, by absorbing preferentially at the interface, hinder the diffusion flux of the substrate and thereby suppress the intermetallic compound growth. - Highlights: Black-Right-Pointing-Pointer Mo nanoparticles do not dissolve or react with the SAC solder during reflow. Black-Right-Pointing-Pointer Addition of Mo nanoparticles results smaller IMC thickness and scallop diameter. Black-Right-Pointing-Pointer Mo nanoparticles influence the interfacial IMC through discrete particle effect.

Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

Directory of Open Access Journals (Sweden)

E. Karageorgou

2014-11-01

Full Text Available SnO2 and Sn:In2O3 nanowires were grown on Si(001, and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.

Split Sn-Cu Alloys on Carbon Nanofibers by One-step Heat Treatment for Long-Lifespan Lithium-Ion Batteries

International Nuclear Information System (INIS)

Shen, Zhen; Hu, Yi; Chen, Renzhong; He, Xia; Chen, Yanli; Shao, Hanfeng; Zhang, Xiangwu; Wu, Keshi

2017-01-01

Highlights: • Spilt Sn–Cu alloys and amorphous CNF anodes are introduced. • Sn–Cu–CNFs were prepared by one-step carbonization-alloying reactions. • The spilt Sn–Cu alloys consist of Cu 6 Sn 5 and Cu 3 Sn. • The coexistence of Cu 6 Sn 5 and Cu 3 Sn led to the enhanced cycle durability. - Abstract: To develop next-generation lithium-ion batteries (LIBs) with novel designs, reconsidering traditional materials with enhanced cycle stability and excellent rate performance is crucial. We herein report the successful preparation of three-dimensional (3D) composites in which spilt Sn–Cu alloys are uniformly dispersed in an amorphous carbon nanofiber matrix (Sn–Cu–CNFs) via one-step carbonization-alloying reactions. The spilt Sn–Cu alloys consist of active Cu 6 Sn 5 and inactive Cu 3 Sn, and are controllable by optimization of the carbonization-alloying reaction temperature. The 3D carbon nanofiber framework allowed the Sn–Cu–CNFs to be used directly as anodes in lithium-ion batteries without the requirement for polymer binders or electrical conductors. These composite electrodes exhibited a stable cyclability with a discharge capacity of 400 mA h g −1 at a high current density of 1.0 A g −1 after 1200 cycles, as well as an excellent rate capability, which could be attributed to the improved electrochemical properties of the Sn–Cu–CNFs provided by the buffering effect of Cu 3 Sn and the 3D carbon nanofiber framework. This one-step synthesis is expected to be widely applicable in the targeted structural design of traditional tin-based anode materials.

Interactions of Cu-substrates with titanium-alloyed Sn-Zn solders

Directory of Open Access Journals (Sweden)

Soares D.

2006-01-01

Full Text Available The interactions of copper substrate with titanium-alloyed Sn-Zn eutectic solders have been studied. Two series of experiments have been performed. The first one consisted in differential thermal analyses of Sn-Zn nearly eutectic alloys containing from 1.3 to 2.2 wt. % Ti. Diffusion couples consisted of Cu-wires and Sn-Zn-Ti liquid solders, produced at 250 and 275 OC have been prepared in the second series,. The contact times were up to 3600 s. The contact zones have been characterized by optical and scanning electron microscope. Two layers have been found along the interfaces solid/liquid. The first and the second layers are identical, respectively, with γ and ε phases of the Cu-Zn system. No changes of the chemical compositions were detected for the tested temperatures and reaction times. Continuous parabolic growth of the total diffusion zone thickness with the time of diffusion is observed. The growth is due mainly to one the formed layers (γ while the thickness of the ε-phase layer, stays almost constant for all tested diffusion times and temperatures.

Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

International Nuclear Information System (INIS)

Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

2006-01-01

Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

Interfacial reactions in the Sb–Sn/(Cu, Ni) systems: Wetting experiments

International Nuclear Information System (INIS)

Novakovic, R.; Lanata, T.; Delsante, S.; Borzone, G.

2012-01-01

Interfacial reactions in the Sb–Sn/Cu and Sb–Sn/Ni systems have been investigated by means of wetting experiments. The wetting behaviour of two lead-free alloys, namely, Sb 2.5 Sn 97.5 and Sb 14.5 Sn 85.5 (at.%), in contact with Cu and Ni-substrates has been studied in view of possible applications as high-temperature solders in the electronics industry. The contact angle measurements on Cu and Ni plates were performed by using a sessile drop apparatus. The solder/substrate interface was characterised by the SEM-EDS analyses. -- Highlights: ► Sb–Sn alloys are used as high temperature lead-free solders. ► Sb–Sn alloys have good wetting properties on Cu and Ni substrates. ► Interfacial reactions and products are important for joint properties. ► Interfacial reactions/products data can be used to study the phase diagrams.

Novel chemical route for deposition of Cu{sub 2}ZnSnS{sub 4} photovoltaic absorbers

Energy Technology Data Exchange (ETDEWEB)

Gordillo, Gerardo; Becerra, Raul A.; Calderón, Clara L., E-mail: ggordillog@unal.edu.co [Universidad Nacional de Colombia, Bogota (Colombia)

2018-05-01

This work reports results of a study carried out to optimize the preparation conditions of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by sequential deposition of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers, where the Cu{sub 2}SnS{sub 3} compound was grown using a novel procedure consisting of simultaneous precipitation of Cu{sub 2}S and SnS{sub 2} performed by diffusion membrane assisted chemical bath deposition (CBD) technique. The precipitation across the diffusion membranes allows achieving moderate control of release of metal ions into the work solution favoring the heterogeneous growth mainly through an ion-ion mechanism. Through a parameters study, conditions were found to grow Cu{sub 2}SnS{sub 3} thin films which were used as precursors for the formation of Cu{sub 2}ZnSnS{sub 4} films. The formation of CZTS thin films grown in the Cu{sub 2}ZnSnS{sub 4} phase was verified through measurements of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Solar cells with efficiencies of 4.9% were obtained using CZTS films prepared by membrane assisted CBD technique as absorber layer. (author)

Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.

Science.gov (United States)

Shin, Donghyeop; Zhu, Tong; Huang, Xuan; Gunawan, Oki; Blum, Volker; Mitzi, David B

2017-06-01

In recent years, Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu 2 BaSnS 4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu 2 BaSnS 4- x Se x (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm 2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu 2 BaSnS 4- x Se x family for high-efficiency and earth-abundant PV. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of nanoparticle addition on the formation and growth of intermetallic compounds (IMCs) in Cu/Sn–Ag–Cu/Cu solder joint during different thermal conditions

International Nuclear Information System (INIS)

Ting Tan, Ai; Wen Tan, Ai; Yusof, Farazila

2015-01-01

Nanocomposite lead-free solders are gaining prominence as replacements for conventional lead-free solders such as Sn–Ag–Cu solder in the electronic packaging industry. They are fabricated by adding nanoparticles such as metallic and ceramic particles into conventional lead-free solder. It is reported that the addition of such nanoparticles could strengthen the solder matrix, refine the intermetallic compounds (IMCs) formed and suppress the growth of IMCs when the joint is subjected to different thermal conditions such as thermal aging and thermal cycling. In this paper, we first review the fundamental studies on the formation and growth of IMCs in lead-free solder joints. Subsequently, we discuss the effect of the addition of nanoparticles on IMC formation and their growth under several thermal conditions. Finally, an outlook on the future growth of research in the fabrication of nanocomposite solder is provided. (review)

Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2013-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

Preparation of PtSnCu/C and PtSn/C electrocatalysts and activation by dealloying processes for ethanol electrooxidation

International Nuclear Information System (INIS)

Crisafulli, Rudy

2013-01-01

PtSnCu/C (with different Pt:Sn:Cu atomic ratios) and PtSn/C (50:50) electrocatalysts were prepared by borohydride (BR) and alcohol-reduction (AR) processes using H 2 PtCl 6 .6H 2 O, SnCl 2 .2H 2 O and CuCl 2 .2H 2 O as metal sources, NaBH 4 and ethylene glycol as reducing agents, 2-propanol and ethylene glycol/water as solvents and carbon black as support. In a further step, these electrocatalysts were activated by chemical (CD) and electrochemical (ED) dealloying processes through acid treatment and thin porous coating technique, respectively. These materials were characterized by energy dispersive X-ray, Xray diffraction, transmission electron microscopy, line scan energy dispersive Xray and cyclic voltammetry. Electrochemical studies for ethanol electro-oxidation were performed by cyclic voltammetry, chronoamperometry and in single Direct Ethanol Fuel Cell using Membrane Electrode Assembly (MEA). The anodic effluents were analysed by gas chromatography. The X-ray diffractograms of the as-synthesized electrocatalysts showed the typical face-centered cubic structure (FCC) of platinum and its alloys. After dealloying, the X-ray diffractograms showed that the Pt FCC structure was preserved. The crystallite sizes of the assynthesized electrocatalysts were in the range of PtSnCu/C (50:40:10) AR/ED > PtSnCu/C (50:10:40) BR/CD. PtSn/C (50:50) BR/CD, PtSnCu/C (50:10:40) BR/CD, PtSnCu/C (50:40:10) AR/CD electrocatalysts and Pt/C BASF, PtSn/C (75:25) BASF commercial electrocatalysts were tested in single Direct Ethanol Fuel Cell. The results showed the following performance for ethanol electro-oxidation: PtSn/C (50:50) BR/CD > PtSnCu/C (50:40:10) AR/CD > PtSnCu/C > PtSn/C (75:25) BASF > PtSnCu/C (50:10:40) BR/CD > Pt/C BASF. (author)

Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

Energy Technology Data Exchange (ETDEWEB)

Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol, E-mail: yckang@pknu.ac.kr

2016-12-15

Highlights: • We deposit CuSn thin films on a Si substrate with various Cu/Sn ratio. • Antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time increased. • XPS was utilized to assign the chemical environment of CuSn thin films before and after antibacterial test. - Abstract: We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

Effects of copper excess and copper deficiency on the structural and electrical properties of bulk Cu{sub x}SnSe{sub 3} with x=1.6–2.2

Energy Technology Data Exchange (ETDEWEB)

Wubet, Walelign; Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw

2015-03-15

Effects of the Cu variation on the morphological, structural, and electrical properties of bulk Cu{sub x}SnSe{sub 3} (CTSe) with x=1.6–2.2 have been investigated. Dense CTSe pellets with grains of 3–4 µm were obtained after sintering at 550 °C. All CTSe pellets showed a dominant p-type behavior. CTSe at x=2.0 with a hole concentration (n{sub p}) of 1.02×10{sup 18} cm{sup −3} and Hall mobility (μ) of 225 cm{sup 2}/V/s had a highest conductivity (σ) of 39 S/cm. CTSe at x=1.6 with n{sub p} of 5.0×10{sup 17} cm{sup −3} and of 11 cm{sup 2}/V/s had a lowest of 0.90 S/cm. The explanation, based upon vacancies and antisite defects, for the changes in electrical property with the Cu content is supported by the data from lattice parameter. The study in bulk properties of CTSe and its defects is helpful for selecting the suitable absorber composition to fabricate thin film solar cells. - Graphical abstract: Cu{sub 2}SnSe{sub 3} is an absorber candidate for solar cells. The Cu stoichiometry on electrical properties, which is important for CIGS and CZTS, is investigated and the Cu-deficiency composition is recommended. - Highlights: • Cu{sub x}SnSe{sub 3} (CTSe) bulks with 1.6≤x≤2.2 were prepared by reactive sintering. • Cu{sub 2}SnSe{sub 3} with n{sub p} of 1.02×10{sup 18} cm{sup −3} and μ of 225 cm{sup 2}/V/s had highest σ of 39 S/cm. • Cu{sub 1.6}SnSe{sub 3} with n{sub p}=5.0×10{sup 17} cm{sup −3} and μ=11 cm{sup 2}/V/s had lowest σ=0.90 S/cm. • Lower n{sub p} at CTSe at x=1.6 is related to the formation of the Sn-to-Cu defect. • The drop in n{sub p} for CTSe at x=2.2 indicates V{sub Sn}{sup 4−} dominates over Cu{sub Sn}{sup 3−} defect.

Preparation of PtSnCu/C and PtSn/C electrocatalysts and activation by dealloying processes for ethanol electrooxidation; Preparacao de eletrocatalisadores PtSnCu/C e PtSn/C e ativacao por processos de dealloying para aplicacao na oxidacao eletroquuimica do etanol

Energy Technology Data Exchange (ETDEWEB)

Crisafulli, Rudy

2013-06-01

PtSnCu/C (with different Pt:Sn:Cu atomic ratios) and PtSn/C (50:50) electrocatalysts were prepared by borohydride (BR) and alcohol-reduction (AR) processes using H{sub 2}PtCl{sub 6}.6H{sub 2}O, SnCl{sub 2}.2H{sub 2}O and CuCl{sub 2}.2H{sub 2}O as metal sources, NaBH{sub 4} and ethylene glycol as reducing agents, 2-propanol and ethylene glycol/water as solvents and carbon black as support. In a further step, these electrocatalysts were activated by chemical (CD) and electrochemical (ED) dealloying processes through acid treatment and thin porous coating technique, respectively. These materials were characterized by energy dispersive X-ray, Xray diffraction, transmission electron microscopy, line scan energy dispersive Xray and cyclic voltammetry. Electrochemical studies for ethanol electro-oxidation were performed by cyclic voltammetry, chronoamperometry and in single Direct Ethanol Fuel Cell using Membrane Electrode Assembly (MEA). The anodic effluents were analysed by gas chromatography. The X-ray diffractograms of the as-synthesized electrocatalysts showed the typical face-centered cubic structure (FCC) of platinum and its alloys. After dealloying, the X-ray diffractograms showed that the Pt FCC structure was preserved. The crystallite sizes of the assynthesized electrocatalysts were in the range of <=2 nm to 3 nm and after dealloying there were no significant variations in sizes. The energy dispersive Xray analysis of the as-synthesized electrocatalysts showed a Pt:Sn and Pt:Sn:Cu atomic ratios similar to the nominal values. After chemical and electrochemical dealloying of the electrocatalysts the ranged Pt:Sn and Pt:Sn:Cu atomic ratios showed that Cu and Sn atoms were removed. However, chemical dealloying process proved to be more efficient for removing Cu and electrochemical dealloying for removing Sn. The line scan energy dispersive X-ray analysis showed that acid and electrochemical treatments were efficient to dealloying Cu and/or Sn superficial atoms of

Electronic structure, magnetism and thermoelectricity in layered perovskites: Sr2SnMnO6 and Sr2SnFeO6

Science.gov (United States)

Khandy, Shakeel Ahmad; Gupta, Dinesh C.

2017-11-01

Layered structures especially perovskites have titanic potential for novel device applications and thanks to the multifunctional properties displayed in these materials. We forecast and justify the robust spin-polarized ferromagnetism in half-metallic Sr2SnFeO6 and semiconducting Sr2SnMnO6 perovskite oxides. Different approximation methods have been argued to put forward their physical properties. The intriguingly intricate electronic band structures favor the application of these materials in spintronics. The transport parameters like Seebeck coefficient, electrical and thermal conductivity, have been put together to establish their thermoelectric response. Finally, the layered oxides are found to switch their application as thermoelectric materials and hence, these concepts design the principles of the technologically desired thermoelectric and spin based devices.

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

Effects of hydrazine on the solvothermal synthesis of Cu2ZnSnSe4 and Cu2CdSnSe4 nanocrystals for particle-based deposition of films

International Nuclear Information System (INIS)

Chiang, Ming-Hung; Fu, Yaw-Shyan; Shih, Cheng-Hung; Kuo, Chun-Cheng; Guo, Tzung-Fang; Lin, Wen-Tai

2013-01-01

The effects of hydrazine on the synthesis of Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 CdSnSe 4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu 2 Se, and Cu 2 SnSe 3 , and Cu 2 SnSe 3 and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu 2 ZnSnSe 4 and Cu 2 CdSnSe 4 nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices

Influence of nanoparticle addition on the formation and growth of intermetallic compounds (IMCs) in Cu/Sn–Ag–Cu/Cu solder joint during different thermal conditions

Science.gov (United States)

Ting Tan, Ai; Wen Tan, Ai; Yusof, Farazila

2015-01-01

Nanocomposite lead-free solders are gaining prominence as replacements for conventional lead-free solders such as Sn–Ag–Cu solder in the electronic packaging industry. They are fabricated by adding nanoparticles such as metallic and ceramic particles into conventional lead-free solder. It is reported that the addition of such nanoparticles could strengthen the solder matrix, refine the intermetallic compounds (IMCs) formed and suppress the growth of IMCs when the joint is subjected to different thermal conditions such as thermal aging and thermal cycling. In this paper, we first review the fundamental studies on the formation and growth of IMCs in lead-free solder joints. Subsequently, we discuss the effect of the addition of nanoparticles on IMC formation and their growth under several thermal conditions. Finally, an outlook on the future growth of research in the fabrication of nanocomposite solder is provided. PMID:27877786

Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

DEFF Research Database (Denmark)

Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

2017-01-01

We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

Electrodeposited Cu2ZnSnS4 thin films

CSIR Research Space (South Africa)

Valdes, M

2014-05-01

Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

Science.gov (United States)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Fabrication and sulfurization of Cu{sub 2}SnS{sub 3} thin films with tuning the concentration of Cu-Sn-S precursor ink

Energy Technology Data Exchange (ETDEWEB)

Wang, Chi-Jie [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shih-Chang [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China)

2016-12-01

Highlights: • Tuning the relative reaction rate of component phases proved to be beneficial in controlling the reaction process. • Low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology. • Optical band-gap energy measured at 1.346 eV suitable for thin-film solar cell applications. - Abstract: In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu{sub 2}S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu{sub 4}SnS{sub 4}. Following sulfurization, single phase Cu{sub 2}SnS{sub 3} (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu{sub 2}S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu{sub 2}S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu{sub 2}S and Cu{sub 4}SnS{sub 4}. Raman spectra revealed that second phase Cu{sub 2}S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole

Effects of In and Ni Addition on Microstructure of Sn-58Bi Solder Joint

Science.gov (United States)

Mokhtari, Omid; Nishikawa, Hiroshi

2014-11-01

In this study, the effect of adding 0.5 wt.% and 1 wt.% In and Ni to Sn-58Bi solder on intermetallic compound (IMC) layers at the interface and the microstructure of the solder alloys were investigated during reflow and thermal aging by scanning electron microscopy and electron probe micro-analysis. The results showed that the addition of minor elements was not effective in suppressing the IMC growth during the reflow; however, the addition of 0.5 wt.% In and Ni was effective in suppressing the IMC layer growth during thermal aging. The thickening kinetics of the total IMC layer was analyzed by plotting the mean thickness versus the aging time on log-log coordinates, and the results showed the transition point from grain boundary diffusion control to a volume diffusion control mechanism. The results also showed that the minor addition of In can significantly suppress the coarsening of the Bi phase.

Effect of Cooling Rate on the Longitudinal Modulus of Cu3Sn Phase of Ag-Sn-Cu Amalgam Alloy (Part II

Directory of Open Access Journals (Sweden)

R. H. Rusli

2015-10-01

Full Text Available Effects of cooling rate (at the time of solidification on the elastic constants of Cu3Sn phase of Ag-Sn-Cu dental amalgam alloy were studied. In this study, three types of alloys were made, with the composition Cu-38-37 wt% Sn by means of casting, where each alloy was subjected to different cooling rate, such as cooling on the air (AC, air blown (AB, and quenched in the water (WQ. X-ray diffraction, metallography, and Scanning Electron Microscopy with Energy Dispersive Spectroscopy studies of three alloys indicated the existence of Cu3Sn phase. Determination of the modulus of elasticity of Cu3Sn (ε phase was carried out by the measurement of longitudinal and transversal waves velocity using ultrasonic technique. The result shows that Cu3Sn (ε phase on AC gives higher modulus of elasticity values than those of Cu3Sn (ε on AB and WQ. The high modulus of elasticity value will produce a strong Ag-Sn-Cu dental amalagam alloy.

The variation of grain structure and the enhancement of shear strength in SAC305-0.1Ni/OSP Cu solder joint

Energy Technology Data Exchange (ETDEWEB)

Fleshman, Collin; Chen, Wei-Yu; Chou, Tzu-Ting [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Huang, Jia-Hong [Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan (China); Duh, Jenq-Gong, E-mail: jgd@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China)

2017-03-01

In this study, the slow speed shear test in both Sn-3.0Ag-0.5Cu (wt%)/OSP Cu and Sn-3.0Ag-0.5Cu-0.1Ni (wt%)/OSP Cu assembly with the ball heights of 300 μm and the corresponding grain structures were investigated. With the aid of Electron Back Scattering Diffraction (EBSD) analysis, single grain structure was observed in Sn-3.0Ag-0.5Cu/OSP Cu. Besides, Ni was found to control the grain structure in Sn-3.0Ag-0.5Cu-0.1Ni solder balls, showing multiple grains with partially interlaced structure. The grain variation resulted from larger undercooling caused by smaller ball size and Ni-dopant induced tiny intermetallic compounds (IMCs). IMCs serve as heterogeneous nucleation sites for β-tin and thus alter the grain structure of solder balls. The results of shear test reveal that the peak force of solder joints was efficiently enhanced by the addition of Ni. The enhancement of mechanical strength was attributed to the modification of grain structure by the introduction of Ni dopant. It is believed that the smaller grains, tiny intermetallic compounds, and the oriented interlaced area in Ni-doped solder joints became energy barriers for propagation of cracks and dislocations. It is demonstrated that Ni-doped solder joints tend to exhibit better mechanical reliability in advanced electronic packaging. - Highlights: • The grain structure and slow speed shear test performance were investigated. • Doping Ni into solder induce interlaced grain structure. • Interlaced structure can enhance mechanical reliability in BGA packaging.

Structural stability of ternary C22–Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds

Energy Technology Data Exchange (ETDEWEB)

Colinet, Catherine, E-mail: ccolinet@simap.grenoble-inp.fr [Science et Ingénierie des Matériaux et Procédés, Grenoble INP, UJF, CNRS, 38402 Saint Martin d’Hères, Cedex (France); Crivello, Jean-Claude [ICMPE-CMTR, CNRS UMR-7182, 2-8 rue Henri Dunant, 94320 Thiais (France); Tedenac, Jean-Claude [Institut de Chimie Moléculaire et des Matériaux I.C.G., UMR-CNRS 5253, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)

2013-09-15

The crystal and electronic structures, and the thermodynamic properties of Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe{sub 2}P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr{sub 6}Sb{sub 2}Co compound. Display Omitted - Highlights: • Structural stability of Zr{sub 6}X{sub 2}T′ compounds (X: p element, T′: late transition metal) in the Fe{sub 2}P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

The crystal structure of (Nb$_{0.75}$Cu$_{0.25}$)Sn$_{2}$ in the Cu-Nb-Sn system

CERN Document Server

Martin, Stefan; Nolze, Gert; Leineweber, Andreas; Leaux, Floriane; Scheuerlein, Christian

2017-01-01

During the processing of superconducting Nb$_{3}$Sn wire, several intermediate intermetallic phases including a previously encountered Cu-Nb-Sn phase show up. The yet unknown crystal structure of this phase is now identified by a combination of different experimental techniques and database search to be of the hexagonal NiMg2 type with a proposed composition of about (Nb0.75Cu0.25)Sn2. The structure determination started from an evaluation of the lattice parameters from EBSD Kikuchi patterns from quenched material suggesting hexagonal or orthorhombic symmetry. A database search then led to the hexagonal NiMg2 type structure, the presence of which was confirmed by a Rietveld analysis on the basis of high energy synchrotron X-ray powder diffraction data. Assuming a partial substitution of Nb in orthorhombic NbSn2 by Cu, the change of the valence electron concentration provokes a structural transformation from the CuMg2 type for NbSn2 to the NiMg2 type for (Nb0.75Cu0.25)Sn2. In the previous literature the (Nb0.7...

TbNb6Sn6: the first ternary compound from the rare earth–niobium–tin system

Directory of Open Access Journals (Sweden)

Viktor Hlukhyy

2010-12-01

Full Text Available The title compound, terbium hexaniobium hexastannide, TbNb6Sn6, is the first ternary compound from the rare earth–niobium–tin system. It has the HfFe6Ge6 structure type, which can be analysed as an intergrowth of the Zr4Al3 and CaCu5 structures. All the atoms lie on special positions; their coordination geometries and site symmetries are: Tb (dodecahedron 6/mmm; Nb (distorted icosahedron 2mm; Sn (Frank–Caspar polyhedron, CN = 14–15 6mm and overline{6}m2; Sn (distorted icosahedron overline{6}m2. The structure contains a graphite-type Sn network, Kagome nets of Nb atoms, and Tb atoms alternating with Sn2 dumbbells in the channels.

Application of single pan thermal analysis to Cu-Sn peritectic alloys

International Nuclear Information System (INIS)

Kohler, F.; Campanella, T.; Nakanishi, S.; Rappaz, M.

2008-01-01

Single pan thermal analyses (SPTA) have been performed on Cu-14.5 wt.% Sn, Cu-21.3 wt.% Sn and Cu-26.8 wt.% Sn peritectic alloys. For this purpose, a SPTA assembly has been built and calibrated. As the latent heat is a function of temperature and composition during solidification of alloys, a new heat flow model coupled to a Cu-Sn thermodynamic database has been defined for the calculation of the corresponding evolutions of the solid mass fraction, f s (T). To verify the accuracy of this model, a close comparison with a microsegregation model that includes back-diffusion in the primary α-solid phase has also been conducted successfully. The thermal analyses have finally shown that the Cu-Sn phase diagram recently assessed in the review of Liu et al. is the most reliable

Effect of P on Microstructure and Mechanical Properties of Sn-Bi Solder

Directory of Open Access Journals (Sweden)

WANG Xiao-jing

2016-07-01

Full Text Available Micro alloy metals P or P/Cu/Zn were added into Sn-Bi alloy to investigate the doping effects on microstructure, mechanical property, deformation fracture from the function of P in pure tin. The results show that doping 1%( mass fraction, same as below P to pure tin can improve the strength and stiffness, decrease the plasticity. Only 0.1%P additive degenerates the mechanical property of Sn-Bi alloy, this is related to the existing form of element P in the base metal and the microstructure of the base metal. In Sn base alloy, P is distributed in phase or grain boundaries in the form of Sn-P intermetallic compounds (IMC, restricting the diffusion and shifting of deformation. Therefore, Sn-1P alloy, IMC distributed in beta-tin base plays a role of strengthening in pure tin doped situation, in Sn-Bi alloy instead, enhancing the deformation mismatch under loading becoming the weak spots where cracks may initiate and propagate, and leading to brittle fracture . Finally, addition of P/Zn/Cu simultaneously to Sn-Bi alloy, the doping can optimize the microstructure, improve the strength and enhance the ultimate tensile strength (UTS of Sn-Bi alloys.

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

Directory of Open Access Journals (Sweden)

Jung-Sik Kim

2016-09-01

Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

Cu2ZnSnS4 solar cells fabricated by short-term sulfurization of sputtered Sn/Zn/Cu precursors under an H2S atmosphere

International Nuclear Information System (INIS)

Emrani, Amin; Rajbhandari, Pravakar P.; Dhakal, Tara P.; Westgate, Charles R.

2015-01-01

Synthesis of Cu 2 ZnSnS 4 (CZTS) thin films by short-term sulfurization of sputtered Sn/Zn/Cu precursors under ambient H 2 S is studied. The effect of the sulfurization processes on the film morphology, surface roughness, composition of the CZTS, and the crystallinity was investigated by using scanning electron microscopy, optical profiler, energy dispersive spectroscopy, and X-ray diffraction respectively. To further explore the CZTS layer, the following additional layers were deposited to complete the solar cells: CdS with chemical bath deposition; ZnO and Al 2 O 3 -doped ZnO with RF magnetron deposition; and, silver fingers as the front contact as the last layer. The optical and morphological properties of the CZTS films were investigated and compared. Subsequently, the electrical characteristics and the efficiencies of the regarding solar cells were analyzed. A maximum efficiency of 3.8% has been obtained for the fast sulfurization (30 min at 580 °C) and finally, the performance is compared with our best cell fabricated through the more common slow annealing. - Highlights: • Development of Cu 2 ZnSnS 4 (CZTS) solar cells using elemental metal sputtering • 112-oriented CZTS films with well-defined morphology obtained • Reported efficiency of 3.8% for a short-term annealing (less than 30 min) under ambient H 2 S • A detailed comparison between the fast and the more common slow annealing is reported

Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals

Science.gov (United States)

Liubachko, V.; Shvalya, V.; Oleaga, A.; Salazar, A.; Kohutych, A.; Pogodin, A.; Vysochanskii, Yu. M.

2017-12-01

Thermal diffusivity and thermal conductivity have been studied for the layered crystals CuInP2S6, CuInP2Se6 from 30 K to 350 K, showing a relevant thermal anisotropy. Heat is much more efficiently transferred within the layers than perpendicular to them. The ferrielectric transition in CuInP2S6 is proven to be clearly first order while the ferroelectric one in CuInP2Se6 has a weak first order character. The behavior of the thermal conductivity as a function of temperature in the ferroelectric phases shows that heat conduction is phonon driven. Disorder in the paraelectric phases due to hopping motions of Cu ions significantly reduces the thermal conductivity to extremely low values.

Dependence of intermetallic compound formation on the sublayer stacking sequence in Ag–Sn bilayer thin films

International Nuclear Information System (INIS)

Rossi, P.J.; Zotov, N.; Bischoff, E.; Mittemeijer, E.J.

2016-01-01

Intermetallic compound (IMC) formation in thermally-evaporated Ag–Sn bilayer thin films has been investigated employing especially X-ray diffraction (XRD) and (S)TEM methods. The specific IMCs that are present in the as-deposited state depend sensitively on the stacking sequence of the sublayers. In case of Sn on top of Ag, predominantly Ag 3 Sn is formed, whereas Ag 4 Sn is predominantly present in the as-deposited state for Ag on top of Sn. In the latter case this is accompanied by an extremely fast uptake of a large amount of Sn by the Ag sublayer, leaving behind macroscopic voids in the Sn sublayer. The results are discussed on the basis of the thermodynamics and kinetics of (IMC) product-layer growth in thin films. It is shown that both thermodynamic and kinetic arguments explain the contrasting phenomena observed.

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Varley, J. B.; Lordi, V. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); He, X.; Rockett, A. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to strongly favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.

Interfacial Reaction of Sn-Ag-Cu Lead-Free Solder Alloy on Cu: A Review

Directory of Open Access Journals (Sweden)

Liu Mei Lee

2013-01-01

Full Text Available This paper reviews the function and importance of Sn-Ag-Cu solder alloys in electronics industry and the interfacial reaction of Sn-Ag-Cu/Cu solder joint at various solder forms and solder reflow conditions. The Sn-Ag-Cu solder alloys are examined in bulk and in thin film. It then examines the effect of soldering conditions to the formation of intermetallic compounds such as Cu substrate selection, structural phases, morphology evolution, the growth kinetics, temperature and time is also discussed. Sn-Ag-Cu lead-free solder alloys are the most promising candidate for the replacement of Sn-Pb solders in modern microelectronic technology. Sn-Ag-Cu solders could possibly be considered and adapted in miniaturization technologies. Therefore, this paper should be of great interest to a large selection of electronics interconnect materials, reliability, processes, and assembly community.

Fabrication of folic acid sensor based on the Cu doped SnO2 nanoparticles modified glassy carbon electrode

International Nuclear Information System (INIS)

Lavanya, N; Radhakrishnan, S; Sudhan, N; Sekar, C; Leonardi, S G; Neri, G; Cannilla, C

2014-01-01

A novel folic acid biosensor has been fabricated using Cu doped SnO 2 nanoparticles (NPs) synthesized by a simple microwave irradiation method. Powder XRD and TEM studies confirmed that both the pure and Cu doped SnO 2 (Cu: 0, 10, 20wt%) crystallized in tetragonal rutile-type structure with spherical morphology. The average crystallite size of pure SnO 2 was estimated to be around 16 nm. Upon doping, the crystallite sizes decreased to 9 nm and 5 nm for 10 and 20wt% Cu doped SnO 2 respectively. XPS studies confirmed the electronic state of Sn and Cu to be 4+ and 2+ respectively. Cu (20wt%) doped SnO 2 NPs are proved to be a good sensing element for the determination of folic acid (FA). Cu-SnO 2 NPs (20wt%) modified glassy carbon electrode (GCE) exhibited the lowest detection limit of 0.024 nM over a wide folic acid concentration range of 1.0 × 10 −10 to 6.7 × 10 −5 M at physiological pH of 7.0. The fabricated sensor is highly selective towards the determination of FA even in the presence of a 100 fold excess of common interferent ascorbic acid. The sensor proved to be useful for the estimation of FA content in pharmaceutical sample with satisfactory recovery. (paper)

Studies of the development and characterization of the Cu-Ni-Pt and Cu-Ni-Sn alloys for electro-electronic uses; Estudos do desenvolvimento e caracterizacao das ligas Cu-Ni-Pt e Cu-Ni-Sn para fins eletro-eletronicos

Energy Technology Data Exchange (ETDEWEB)

Silva, Luis Carlos Elias da

2006-07-01

The Cu and its alloys have different applications in the owed modern society the excellent electric properties, thermal conductivity, resistance to the corrosion and other properties. These applications can be in valves, pipes, pots for absorption of solar energy, radiators for automobiles, current driver, electronic driver, thermostats elements and structural parts of nuclear reactors, as, for example, reels for field toroidal for a reactor of nuclear coalition. The alloys used in nuclear reactors, we can highlight Cu-Be, Cu-Sn and Cu-Pt. Ni and Co frequently are added to the Cu alloys so that the solubility is moved for temperatures more elevated with relationship to the binary systems of Cu-Sn and Cu-Pt. The addition of Ni-Pt or Ni-Sn to the Cu in the same or inferior percentages to 1,5% plus thermomechanical treatments changes the properties of the copper. We studied the electric conductivity and hardness Vickers of the Cu-Ni-Pt and Cu-Ni-Sn and compared with the electrolytic Cu. In the proposed flowcharts, breaking of the obtaining of the ingot, we proceeded with thermo mechanical treatments. (author)

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

Science.gov (United States)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

Microstructural and mechanical characterization of melt spun process Sn-3.5Ag and Sn-3.5Ag-xCu lead-free solders for low cost electronic assembly

Energy Technology Data Exchange (ETDEWEB)

Mostafa Shalaby, Rizk; Kamal, Mustafa [Metal Physics Laboratory, Physics Department, Faculty of Science, Mansoura University, P.O.Box: 35516, Mansoura (Egypt); Ali, Esmail A.M. [Basic Science Department, Faculty of Engineering, University of Science & Technology (Yemen); Gumaan, Mohammed S., E-mail: m.gumaan1@gmail.com [Metal Physics Laboratory, Physics Department, Faculty of Science, Mansoura University, P.O.Box: 35516, Mansoura (Egypt); Basic Science Department, Faculty of Engineering, University of Science & Technology (Yemen)

2017-04-06

This paper aims to investigate the reliability of mechanical and creep behavior for the eutectic Sn-Ag and Sn-Ag-Cu Solder joints rapidly solidified after hot compressing (HC) in terms of structural changes and its relationship with thermal behavior, which has been discussed and compared with their properties before HC process by Mustafa et al. (2016) . These solder joints were prepared by melt-spinning technique and tested by HC at 30 MPa pressure and 150 °C for 90 min, their structural, mechanical and thermal properties after HC process have been investigated by X-ray diffraction (XRD), dynamic resonance techniques (DRT) and differential scanning calorimetry (DSC) techniques respectively and compared with these solders before HC. The results revealed that the pressure caused some fractures on the solders morphology surfaces. But some benefits for these solders have been occurred, like eliminating the internal stresses through recrystallization process whose evidence by the particle size increases after they HC, stabilized structure after HC was due to the metastable phases rearrangements, new intermetallic compounds (IMCs) formation, decreasing, melting temperature range (∆T), lattice strains (ƹ) and entropy change (S). These sequential benefits are considered to be the main reasons which lead to decreasing energy loss (Q{sup −1}), creep rate (É›) and thermal stability enhancement. Elastic modulus increment might be due to low elastic lattice distortions after HC, while the stress exponent (n) reduction refers to viscous glide mechanism of deformation after HC instead of climb deformation mechanism before HC.

Effects of hydrazine on the solvothermal synthesis of Cu{sub 2}ZnSnSe{sub 4} and Cu{sub 2}CdSnSe{sub 4} nanocrystals for particle-based deposition of films

Energy Technology Data Exchange (ETDEWEB)

Chiang, Ming-Hung [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China); Fu, Yaw-Shyan, E-mail: ysfu@mail.nutn.edu.tw [Department of Greenergy, National University of Tainan, Tainan, Taiwan 700 (China); Shih, Cheng-Hung; Kuo, Chun-Cheng [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701 (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China)

2013-10-01

The effects of hydrazine on the synthesis of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) and Cu{sub 2}CdSnSe{sub 4} (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu{sub 2}Se, and Cu{sub 2}SnSe{sub 3}, and Cu{sub 2}SnSe{sub 3} and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu{sub 2}ZnSnSe{sub 4} and Cu{sub 2}CdSnSe{sub 4} nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices.

The influence of precursor Cu content and two-stage processing conditions on the microstructure of Cu{sub 2}ZnSnSe{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Márquez-Prieto, J., E-mail: jose.prieto@northumbria.ac.uk [Northumbria Photovoltaic Application Centre, Faculty of Engineering and Environment, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom); Ren, Y. [Ångström Solar Center, Solid State Electronics, Uppsala University, Uppsala 751 21 (Sweden); Miles, R.W.; Pearsall, N.; Forbes, I. [Northumbria Photovoltaic Application Centre, Faculty of Engineering and Environment, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom)

2015-05-01

This paper reports the influence of processing temperature on the microstructure of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) absorber layers for temperatures between 380 and 550 °C produced using a 2-stage process. X-ray diffraction analysis showed the formation of Cu{sub 2}ZnSnSe{sub 4} over this temperatures range. The Williamson-Hall method was used for microstructural analysis of the CZTSe absorbers, and this showed a progressive decrease of the micro-strain of the CZTSe with increasing selenisation temperature. The influence of precursor Cu content on the microstructure of the CZTSe was also studied. An increase of Cu content in the precursor is correlated to an increase in grain size and a decrease in micro-strain. Raman measurements show an asymmetrical broadening towards lower energies of the main 197 cm{sup −1} mode for Cu-poor compositions. This study provides an insight into the dependency of the crystallinity of CZTSe on composition and synthesis temperature. - Highlights: • We fabricate Cu{sub 2}ZnSnSe{sub 4} thin films by sputtering and post-reactive annealing. • The micro-strain of Cu{sub 2}ZnSnSe{sub 4} increases when Cu content decreases. • The micro-strain of Cu{sub 2}ZnSnSe{sub 4} decreases with increasing processing temperature. • The defect concentration of Cu{sub 2}ZnSnSe{sub 4} increases when Cu content decreases.

Cu-Sn Bimetallic Catalyst for Selective Aqueous Electroreduction of CO2 to CO

KAUST Repository

Sarfraz, Saad

2016-03-23

We report a selective and stable electrocatalyst utilizing non-noble metals consisting of Cu and Sn for the efficient and selective reduction of CO2 to CO over a wide potential range. The bimetallic electrode was prepared through the electrodeposition of Sn species on the surface of oxide-derived copper (OD-Cu). The Cu surface, when decorated with an optimal amount of Sn, resulted in a Faradaic efficiency (FE) for CO greater than 90% and a current density of −1.0 mA cm−2 at −0.6 V vs. RHE, compared to the CO FE of 63% and −2.1 mA cm−2 for OD-Cu. Excess Sn on the surface caused H2 evolution with a decreased current density. X-ray diffraction (XRD) suggests the formation of Cu-Sn alloy. Auger electron spectroscopy of the sample surface exhibits zero-valent Cu and Sn after the electrodeposition step. Density functional theory (DFT) calculations show that replacing a single Cu atom with a Sn atom leaves the d-band orbitals mostly unperturbed, signifying no dramatic shifts in the bulk electronic structure. However, the Sn atom discomposes the multi-fold sites on pure Cu, disfavoring the adsorption of H and leaving the adsorption of CO relatively unperturbed. Our catalytic results along with DFT calculations indicate that the presence of Sn on reduced OD-Cu diminishes the hydrogenation capability—i.e., the selectivity towards H2 and HCOOH—while hardly affecting the CO productivity. While the pristine monometallic surfaces (both Cu and Sn) fail to selectively reduce CO2, the Cu-Sn bimetallic electrocatalyst generates a surface that inhibits adsorbed H*, resulting in improved CO FE. This study presents a strategy to provide a low-cost non-noble metals that can be utilized as a highly selective electrocatalyst for the efficient aqueous reduction of CO2.

In situ investigation of SnAgCu solder alloy microstructure

International Nuclear Information System (INIS)

Pietrikova, Alena; Bednarcik, Jozef; Durisin, Juraj

2011-01-01

Research highlights: → In situ X-ray diffraction investigation enabled detailed analysis of the melting and solidification process of the SAC305 alloy. → It was found that the SAC305 solder melts at 230 deg. C. When cooling from 240 deg. C the SAC305 alloy solidifies at the temperature of 214 deg. C. During solidification β-Sn and Cu 6 Sn 5 is also formed. Formation of Ag 3 Sn occurs at 206 deg. C and the remaining amount of alloy crystallizes approximately at 160 deg. C. → Furthermore, observation of the thermal expansion behaviour of the β-Sn tetragonal unit cell revealed linear dependence of the unit cell volume on temperature. The unit cell parameters a and c also increase linearly with the temperature. Despite the fact that the c parameter is substantially smaller than parameter a, it exhibits a significantly higher linear thermal expansion coefficient. Comparison between data obtained during heating and cooling indicates that the thermal expansion coefficient is slightly greater in the case of cooling. - Abstract: In situ X-ray diffraction experiments, using synchrotron radiation, were employed to analyze microstructure evolution of the 96.5Sn3Ag0.5Cu (wt.%)-SAC305 lead-free solder alloy during heating (30-240 deg. C), isothermal dwell (240 deg. C) and cooling (240-30 deg. C). The special emphasis was placed on the study of the melting and solidification processes, explaining formation, distribution and the order of crystallization of the crystal phases (β-Sn, intermetallic compounds) in the solder alloy. Furthermore, thermal expansion behaviour of the main constituent phase β-Sn was analyzed prior to melting and after the consequent solidification.

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu_2ZnSnS_4 thin films

International Nuclear Information System (INIS)

Yu, Ruei-Sung; Hung, Ta-Chun

2016-01-01

Highlights: • Oxygen incorporation in Cu_2ZnSnS_4 changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10"4 to 10"5 cm"−"1. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu_2ZnSnS_4 thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu_2ZnSnS_4 films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu_2ZnSnS_4 film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu_2ZnSnS_4 changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10"4 cm"−"1 to 10"5 cm"−"1. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu_2ZnSnS_4 thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Role of different chelating agent in synthesis of copper doped tin oxide (Cu-SnO2) nanoparticles

Science.gov (United States)

Saravanakumar, B.; Anusiya, A.; Rani, B. Jansi; Ravi, G.; Yuvakkumar, R.

2018-05-01

An attempt was made to synthesis the copper doped tin oxide (Cu-SnO2) nanoparticles by adopting different chelating agents (NaOH, KOH and C2H2O4) by Sol-gel process. The synthesized products were characterized by XRD, Photoluminescence (PL), Infra- Red (FTIR) and SEM analysis. The XRD confirms the formation of Cu-SnO2 shows the maximum peak at 33.8° with lattice plane (101). The PL peak at 361 and 382 nm due to the recombination of electron in conduction band to valence band infers the optical properties. The IR spectra correspond to the peak at 551 and 620 cm-1 attributed to the characteristics peak for Cu-SnO2 nanoparticles. The SEM images for all three Cu-SnO2 nanoparticles formed by three chelating agent (NaOH, KOH and C2H2O4) facilitates the formation mechanism and the chelating agent Oxalic acid results in formation of nano flowers with diverse layers orientated in random direction. Further SEM studies reveal that, the Cu-SnO2 nanoparticles formed by oxalic acid could posses high surface area with large number layered structured enables the better electrochemical properties and its applications.

Correlation between the oxide impedance and corrosion behavior of Zr-Nb-Sn-Fe-Cu alloys

Science.gov (United States)

Park, Sang-Yoon; Lee, Myung-Ho; Jeong, Yong-Hwan; Jung, Youn-Ho

2004-12-01

The correlation between the oxide impedance and corrosion behavior of two series of Zr-Nb-Sn-Fe-Cu alloys was evaluated. Corrosion tests were performed in a 70 ppm LiOH aqueous solution at 360°C for 300 days. The results of the corrosion tests revealed that the corrosion behavior of the alloys depended on the Nb and Sn content. The impedance characteristics for the pre- and post-transition oxide layers formed on the surface of the alloys were investigated in sulfuric acid at room temperature. From the results, a pertinent equivalent circuit model was preferably established, explaining the properties of double oxide layers. The impedance of the oxide layers correlated with the corrosion behavior; better corrosion resistance always showed higher electric resistance for the inner layers. It is thus concluded that a pertinent equivalent circuit model would be useful for evaluating the long-term corrosion behavior of Zr-Nb-Sn-Fe-Cu alloys.

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Self-Assembled Cu-Sn-S Nanotubes with High (De)Lithiation Performance.

Science.gov (United States)

Lin, Jie; Lim, Jin-Myoung; Youn, Duck Hyun; Kawashima, Kenta; Kim, Jun-Hyuk; Liu, Yang; Guo, Hang; Henkelman, Graeme; Heller, Adam; Mullins, Charles Buddie

2017-10-24

Through a gelation-solvothermal method without heteroadditives, Cu-Sn-S composites self-assemble to form nanotubes, sub-nanotubes, and nanoparticles. The nanotubes with a Cu 3-4 SnS 4 core and Cu 2 SnS 3 shell can tolerate long cycles of expansion/contraction upon lithiation/delithiation, retaining a charge capacity of 774 mAh g -1 after 200 cycles with a high initial Coulombic efficiency of 82.5%. The importance of the Cu component for mitigation of the volume expansion and structural evolution upon lithiation is informed by density functional theory calculations. The self-generated template and calculated results can inspire the design of analogous Cu-M-S (M = metal) nanotubes for lithium batteries or other energy storage systems.

Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells

Directory of Open Access Journals (Sweden)

A. Le Donne

2015-01-01

Full Text Available Cu2ZnSnS4 (CZTS absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, GaSe2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor

Science.gov (United States)

Hamdani, K.; Chaouche, M.; Benabdeslem, M.; Bechiri, L.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Otmani, A.; Marie, P.

2014-11-01

Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling, starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu2SnSe3 materials. Thin films were prepared by thermal evaporation on Corning glass substrate at Ts = 300 °C. The structural, compositional, morphological and optical properties of the synthesized semiconductor have been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal structure, with the presence of Cu2Se as a secondary phase. On the other hand, the deposited films showed a cubic Cu2SnSe3 ternary phase and extra peaks belonging to some binary compounds. Furthermore, optical measurements showed that the deposited layers have a relatively high absorption coefficient of 105 cm-1 and present a band gap of 0.94 eV.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Alternating field losses in Nb3Sn multifilamentary superconductor

International Nuclear Information System (INIS)

Murphy, J.H.; Deis, D.W.; Shaw, B.J.; Walker, M.S.

1975-01-01

Transverse alternating field losses at 4.2K have been measured from 0.5 Hz to 10 kHz in a Nb 3 Sn multifilamentary superconductor in bias fields to 5 Tesla. The 0.020 inch diameter sample was prepared by heat treating a Cu, Nb-1 wt percent Zr, CuSn composite at 700 0 C for 20 hours to form Nb 3 Sn on the inside surface of the annular filaments. Metallurgical studies have been made to determine the Sn distribution and to estimate the thickness of the Nb 3 Sn layer. The I/sub c/-H curve and resistive and inductive transition curves are presented. The losses are analyzed with respect to the present loss theories using the conductor characteristics measured and excellent agreement between experiment and theory is achieved. 1 table, 6 figures

Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

International Nuclear Information System (INIS)

Xu, H.; Liu, C.; Silberschmidt, V.V.; Pramana, S.S.; White, T.J.; Chen, Z.; Acoff, V.L.

2011-01-01

Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 deg. C to 250 deg. C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates towards the Cu ball during annealing. The formation of intermetallic compounds (IMC) is controlled by Cu diffusion, where the kinetics obey a parabolic growth law until complete consumption of the Al pad. The activation energies to initiate crystallization of CuAl 2 and Cu 9 Al 4 are 60.66 kJ mol -1 and 75.61 kJ mol -1 , respectively. During IMC development, Cu 9 Al 4 emerges as a second layer and grows together with the initial CuAl 2 . When Al is completely consumed, CuAl 2 transforms to Cu 9 Al 4 , which is the terminal product. Unlike the excessive void growth in Au-Al bonds, only a few voids nucleate in Cu-Al bonds after long-term annealing at high temperatures (e.g., 250 o C for 25 h), and their diameters are usually in the range of tens of nanometers. This is due to the lower oxidation rate and volumetric shrinkage of Cu-Al IMC compared with Au-Al IMC.

Preparation of Cu2ZnSnS4 nano-crystalline powder by mechano-chemical method

Science.gov (United States)

Alirezazadeh, Farzaneh; Sheibani, Saeed; Rashchi, Fereshteh

2018-01-01

Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is one of the most promising ceramic materials as an absorber layer in solar cells due to its suitable band gap, high absorption coefficient and non-toxic and environmental friendly constituent elements. In this work, nano-crystalline CZTS powder was synthesized by mechanical milling. Elemental powders of Cu, Zn, Sn and were mixed in atomic ratio of 2:1:1:4 according to the stoichiometry of Cu2ZnSnS4 and then milled in a planetary high energy ball mill under argon atmosphere. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and diffusion reflectance spectroscopy (DRS). XRD results confirm the formation of single-phase CZTS with kesterite structure after 20 h of milling. Also, the mean crystallite size was about 35 nm. SEM results show that after 20 h of milling, the product has a relatively uniform particle size distribution. Optical properties of the product indicate that the band gap of prepared CZTS is 1.6 eV which is near to the optimum value for photovoltaic solar cells showing as a light absorber material in solar energy applications.

Microstructure and Mechanical Properties of Stainless Steel/Brass Joints Brazed by Sn-Electroplated Ag Brazing Filler Metals

Science.gov (United States)

Wang, Xingxing; Peng, Jin; Cui, Datian

2018-05-01

To develop a high-Sn-content AgCuZnSn brazing filler metal, the BAg50CuZn was used as the base filler metal and a Sn layer was electroplated upon it. Then, the 304 stainless steel and the H62 brass were induction-brazed with the Sn-plated brazing filler metals. The microstructures of the joints were examined with an optical microscope, a scanning electron microscope and an x-ray diffractometer. The corresponding mechanical properties were obtained with a universal tensile testing machine. The results indicated that the induction brazed joints consisted of the Ag phase, the Cu phase and the CuZn phase. When the content of Sn in the Sn-plated Ag brazing filler metal was 6.0 or 7.2 wt.%, the Cu5Zn8, the Cu41Sn11 and the Ag3Sn phases appeared in the brazed joint. The tensile strength of the joints brazed with the Sn-plated filler metal was higher compared to the joints with the base filler metal. When the content of Sn was 6.0 wt.%, the highest tensile strength of the joint reached to 395 MPa. The joint fractures presented a brittle mode, mixed with a low amount of ductile fracture, when the content of Sn exceeded 6.0 wt.%.

Thermal Analysis of the Sn-Ag-Cu-In Solder Alloy

DEFF Research Database (Denmark)

Sopousek, J.; Palcut, Marián; Hodúlová, Erika

2010-01-01

The tin-based alloy Sn-1.5Ag-0.7Cu-9.5In (composition in wt.%) is a potential candidate for lead-free soldering at temperatures close to 200°C due to the significant amount of indium. Samples of Sn-1.5Ag-0.7Cu-9.5In were prepared by controlled melting of the pure elements, followed by quenching...... to room temperature. The samples were analyzed by scanning electron microscopy/energy-dispersive x-ray spectroscopy (SEM/EDS) and electron backscatter diffraction. The solidified melt consisted of four different phases. Solidification behavior was monitored by heat-flux differential scanning calorimetry...

Fabrication of Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} solar cells by ethanol-ammonium solution process

Energy Technology Data Exchange (ETDEWEB)

Xue, Cong; Li, Jianmin; Wang, Yaguang; Jiang, Guoshun; Weifeng, Liu, E-mail: liuwf@ustc.edu.cn; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn

2016-10-15

Highlights: • The CBD precipitates were utilized to fabricate the CZTS/CZTSSe solar cells. • A solvent mixture of ethanol and ammonium hydroxide was used to form SnS-Cu2O-ZnS slurry. • Formation of CZTS/CZTSSe with good crystalline quality confirmed by XRD and Raman spectra. • CZTS and CZTSSe thin film solar cells obtained the best PCE of 1.99% and 2.95%, respectively. - Abstract: In this paper, Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} precursor films were produced by doctor blade process from SnS-Cu{sub 2}O-ZnS slurry. To prepare the slurry, SnS, ZnS and Cu{sub 2}O precipitates, which are outgrowths of stacked layer ZnS/Cu/SnS by CBD (chemical bath deposition)-annealing route, were dissolved in the mixture solvent of ethanol and NH{sub 3}·H{sub 2}O. Synthesized precursor films were then annealed at different conditions. The post-annealed films were characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman measurements and UV–vis–NIR spectroscopy. SEM studies reveal that the rough and relatively compact absorber thin films are obtained via the sulfidation and sulfidation-selenization processes. X-ray diffraction and Raman spectrum results verify that the obtained films are composed of Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} phases, which have high absorbance in visible range and direct band gap energy of 1.01–1.47 eV. The best devices yield total area power conversion efficiency of 1.99% and 2.95% corresponding to Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} thin film solar cells under AM1.5 illumination without any anti-reflection layer.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

2009-05-15

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Metastable Phase Separation and Concomitant Solute Redistribution of Liquid Fe-Cu-Sn Ternary Alloy

International Nuclear Information System (INIS)

Xiao-Mei, Zhang; Wei-Li, Wang; Ying, Ruan; Bing-Bo, Wei

2010-01-01

Liquid Fe-Cu-Sn ternary alloys with lower Sn contents are usually assumed to display a peritectic-type solidification process under equilibrium condition. Here we show that liquid Fe 47.5 Cu 47.5 Sn 5 ternary alloy exhibits a metastable immiscibility gap in the undercooling range of 51–329 K (0.19T L ). Macroscopic phase separation occurs once undercooling exceeds 196 K and causes the formation of a floating Fe-rich zone and a descending Cu-rich zone. Solute redistribution induces the depletion of Sn concentration in the Fe-rich zone and its enrichment in the Cu-rich zone. The primary Fe phase grows dendritically and its growth velocity increases with undercooling until the appearance of notable macrosegregation, but will decrease if undercooling further increases beyond 236 K. The microsegregation degrees of both solutes in Fe and Cu phases vary only slightly with undercooling. (condensed matter: structure, mechanical and thermal properties)

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

Evaluaciones microcalorimétricas no-isotermas en aleaciones de Cu-9Ni-5,5Sn templadas y deformadas en frío

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Donoso, E.

2012-02-01

Full Text Available The thermal aging of both a quenched and a cold rolled homogeneous supersaturated Cu-9 % wt Ni-5.5 wt % Sn alloy has been studied from differential scanning calorimetry (DSC and microhardness measurements. An increase of the hardness during the aging of the quenched sample, because of the precipitation of a Υ´ phase, takes place. On the contrary, no hardness increase was observed during the aging of the cold rolled sample. A theoretical analysis of the enthalpy determined from the first DSC exothermic peak suggests that a segregation of the solute towards the dislocations occurs during the aging of the cold rolled alloy. The values of the n Avrami-Erofeev coefficients estimated from the kinetic analysis supports the above interpretations.

Se ha estudiado por calorimetría diferencial de barrido (DSC y medidas de microdureza, el comportamiento durante el recocido de una aleación Cu-9 % Ni-5,5 % Sn templada y deformada por laminación en frio al 50 %, respectivamente. Se ha concluido que durante el tratamiento térmico de la muestra templada tiene lugar un aumento de la microdureza atribuido a la precipitación de una fase Υ´ de composición (Cu_xNi_1x3Sn. Sin embargo, no se ha observado un aumento de dureza durante el recocido de la muestra deformada en frío. Este comportamiento se ha interpretado considerando que las dislocaciones generadas por la laminación en frío, favorecen la segregación de soluto (níquel y estaño hacia las dislocaciones en lugar de la formación de la fase (Cu_xNi1-x₃Sn. Tanto el análisis teórico de la entalpía determinada para esta etapa como los valores de los coeficientes n de Avrami-Erofeev determinados a partir de un análisis cinético apoyan esta interpretación.

Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

2009-02-02

Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

Impact of thickness on the structural properties of high tin content GeSn layers

Science.gov (United States)

Aubin, J.; Hartmann, J. M.; Gassenq, A.; Milord, L.; Pauc, N.; Reboud, V.; Calvo, V.

2017-09-01

We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10-15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 μm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

Studies of the development and characterization of the Cu-Ni-Pt and Cu-Ni-Sn alloys for electro-electronic uses

International Nuclear Information System (INIS)

Silva, Luis Carlos Elias da

2006-01-01

The Cu and its alloys have different applications in the owed modern society the excellent electric properties, thermal conductivity, resistance to the corrosion and other properties. These applications can be in valves, pipes, pots for absorption of solar energy, radiators for automobiles, current driver, electronic driver, thermostats elements and structural parts of nuclear reactors, as, for example, reels for field toroidal for a reactor of nuclear coalition. The alloys used in nuclear reactors, we can highlight Cu-Be, Cu-Sn and Cu-Pt. Ni and Co frequently are added to the Cu alloys so that the solubility is moved for temperatures more elevated with relationship to the binary systems of Cu-Sn and Cu-Pt. The addition of Ni-Pt or Ni-Sn to the Cu in the same or inferior percentages to 1,5% plus thermomechanical treatments changes the properties of the copper. We studied the electric conductivity and hardness Vickers of the Cu-Ni-Pt and Cu-Ni-Sn and compared with the electrolytic Cu. In the proposed flowcharts, breaking of the obtaining of the ingot, we proceeded with thermo mechanical treatments. (author)

Wetting behavior of molten In-Sn alloy on bulk amorphous and crystalline Cu40Zr44Al8Ag8

International Nuclear Information System (INIS)

Ma, G. F.; Zhang, H. F.; Li, H.; Hu, Z. Q.

2007-01-01

Using the sessile-drop method, the wettability of the molten In-Sn alloy on bulk amorphous and crystalline Cu 40 Zr 44 Al 8 Ag 8 alloy was studied at different temperatures. It was found that the equilibrium contact angle of In-Sn alloy melt on bulk amorphous substrate was smaller than that of the crystalline one. An intermetallic compound existed at the interface of In-Sn alloy on amorphous Cu 40 Zr 44 Al 8 Ag 8 , while no intermediate reaction layer was formed at the interface of In-Sn alloy on crystalline Cu 40 Zr 44 Al 8 Ag 8 in the temperature range studied

Cu-Nb3Sn superconducting wires prepared by ''Copper Liquid Phase Sintering method'' using the Nb-H

International Nuclear Information System (INIS)

Resende, A.T. de.

1985-01-01

Cu-30% Nb in weighting were prepared by the method of Copper sintering liquid phase the method was improved by substitution of Nb power by Nb-H powder, obtaining a high density material with good mechanical properties, which was reduced to fine. Wire, Without heat treatment. The Cu-Nb 3 Sn wires were obtained by external diffusion process depositing tin in the Cu-30%Nb wires, and by internal diffusion process using the Sn-8.5% Cu in weighting, which was reduced to rods of 3.5 mm. These Cu-30%Nb rods were enclosed in copper tubes and deformed mechanically by rotary swaging and drawing. During the drawing step some wires were fractured, that were analysed and correlated with the microstructure of the Sn-8.5 Wt% Cu alloy. External and internal diffusion samples; after a fast thermal treatment for Sn diffusion, were submited to the temperature of 700 0 C to provide the reaction between Sn and Nb, leading to the Nb 3 Sn phase. Samples with several reaction times, and its influence on T c and J c critical parameters and normal resistivity were prepared and analysed. (author) [pt

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu{sub 2}ZnSnS{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Yu, Ruei-Sung, E-mail: rsyu@asia.edu.tw [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China); Department of Medical Research, China Medical University Hospital, China Medical University, Taichung 40402, Taiwan (China); Hung, Ta-Chun [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China)

2016-02-28

Highlights: • Oxygen incorporation in Cu{sub 2}ZnSnS{sub 4} changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10{sup 4} to 10{sup 5} cm{sup −1}. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu{sub 2}ZnSnS{sub 4} thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu{sub 2}ZnSnS{sub 4} films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu{sub 2}ZnSnS{sub 4} film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu{sub 2}ZnSnS{sub 4} changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10{sup 4} cm{sup −1} to 10{sup 5} cm{sup −1}. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu{sub 2}ZnSnS{sub 4} thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

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Tai-Hsiang Lui

2015-01-01

Full Text Available Cu2Sn3S7 (CTS can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.

Enhanced Thermoelectric Properties of Graphene/Cu2SnSe3 Composites

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Degang Zhao

2017-02-01

Full Text Available Cu2SnSe3 material is regarded as a potential thermoelectric material due to its relatively high carrier mobility and low thermal conductivity. In this study, graphene was introduced into the Cu2SnSe3 powder by ball milling, and the bulk graphene/Cu2SnSe3 thermoelectric composites were prepared by spark plasma sintering. The graphene nanosheets distributed uniformly in the Cu2SnSe3 matrix. Meanwhile, some graphene nanosheets tended to form thick aggregations, and the average length of these aggregations was about 3 μm. With the fraction of graphene increasing, the electrical conductivity of graphene/Cu2SnSe3 samples increased greatly while the Seebeck coefficient was decreased. The introduction of graphene nanosheets can reduce the thermal conductivity effectively resulting from the phonon scattering by the graphene interface. When the content of graphene exceeds a certain value, the thermal conductivity of graphene/Cu2SnSe3 composites starts to increase. The achieved highest figure of merit (ZT for 0.25 vol % graphene/Cu2SnSe3 composite was 0.44 at 700 K.

Laser soldering of Sn-Ag-Cu and Sn-Zn-Bi lead-free solder pastes

Science.gov (United States)

Takahashi, Junichi; Nakahara, Sumio; Hisada, Shigeyoshi; Fujita, Takeyoshi

2004-10-01

It has reported that a waste of an electronics substrate including lead and its compound such as 63Sn-37Pb has polluted the environment with acid rain. For that environment problem the development of lead-free solder alloys has been promoted in order to find out the substitute for Sn-Pb solders in the United States, Europe, and Japan. In a present electronics industry, typical alloys have narrowed down to Sn-Ag-Cu and Sn-Zn lead-free solder. In this study, solderability of Pb-free solder that are Sn-Ag-Cu and Sn-Zn-Bi alloy was studied on soldering using YAG (yttrium aluminum garnet) laser and diode laser. Experiments were peformed in order to determine the range of soldering parameters for obtaining an appropriate wettability based on a visual inspection. Joining strength of surface mounting chip components soldered on PCB (printed circuit board) was tested on application thickness of solder paste (0.2, 0.3, and 0.4 mm). In addition, joining strength characteristics of eutectic Sn-Pb alloy and under different power density were examined. As a result, solderability of Sn-Ag-Cu (Pb-free) solder paste are equivalent to that of coventional Sn-Pb solder paste, and are superior to that of Sn-Zn-Bi solder paste in the laser soldering method.

Crystal structure and magnetism of layered perovskites compound EuBaCuFeO5

Science.gov (United States)

Lal, Surender; Mukherjee, K.; Yadav, C. S.

2018-04-01

Layered perovskite compounds have interesting multiferroic properties.YBaCuFeO5 is one of the layered perovskite compounds which have magnetic and dielectric transition above 200 K. The multiferroic properties can be tuned with the replacement of Y with some other rare earth ions. In this manuscript, structural and magnetic properties of layered perovskite compound EuBaCuFeO5 have been investigated. This compound crystallizes in the tetragonal structure with P4mm space group and is iso-structural with YBaCuFeO5. The magnetic transition has been found to shift to 120 K as compared to YBaCuFeO5 which has the transition at 200 K. This shift in the magnetic transition has been ascribed to the decrease in the chemical pressure that relaxes the magnetic moments.

Correlation between processing conditions of Cu2ZnSn(SxSe1-x)4 and modulated surface photovoltage

Science.gov (United States)

Lin, X. Z.; Dittrich, Th.; Fengler, S.; Lux-Steiner, M. Ch.; Ennaoui, A.

2013-04-01

Cu2ZnSn(SxSe1-x)4 (CZTSSe) layers deposited from multi-component nanoparticle inks were characterized by modulated surface photovoltage (SPV) spectroscopy to investigate the effect of annealing conditions. The SPV signals increased strongly with decreasing sulfur content. Band gaps were obtained in terms of SPV onset energy. A diffusion length of above 1 μm was estimated for photo-generated electrons at x = 0.28. The band gap increased with increasing x showing an anomaly in the range of 0.5 < x < 1. The results suggested that an excess of selenium is required for the formation of a photo-active phase reliable for efficient Cu2ZnSn(SxSe1-x)4-based solar cells.

Synthesis by mechanical alloying and characterization of 95.5Sn/4.0Ag/0.5Cu, (wt%) nanopowder

International Nuclear Information System (INIS)

Barreto, Karen Lyn Lima; Manzato, Lizandro; Rivera, Jose Anglada; Oliveira, Marceli Falcao de

2010-01-01

This work aims at sintering and characterizing the 95.5Sn/4.0Ag/0.5Cu (wt%) nanopowder, produced by high energy milling. The nano-sized particles reduce the melting point of this solder, which is usually higher for such alloys, for example, when compared with the usual 63Sn/37Pb (wt%) solder. The alloy was processed in a Spex mill with the following parameters: (I) different times of milling, 12, 24 and 48 hours. (II) the ratio of ball/mass powder of 40:1 and (II) hydrogen milling atmosphere. The microstructural evolution during milling was studied by X-ray diffraction and differential calorimetry. Combining these three variables, after grinding, a reduction of the particle size and the melting point of the solder were observed. This material is promising for applications in microelectronics packaging as a lead free solder. (author)

Effect of Bi-content on hardness and micro-creep behavior of Sn-3.5Ag rapidly solidified alloy

Energy Technology Data Exchange (ETDEWEB)

Kamal, M. [Metal Physics Laboratory, Faculty of Science, Mansoura University (Egypt); Gouda, El Said [Metal Physics Laboratory, Department of Solid State Physics, Physics Division, National Research Center, Dokki, Giza (Egypt); Marei, L.K. [Faculty of Petroleum and Mining Engineering, Suez Canal University, Suez (Egypt)

2009-12-15

In the present paper, the influence of 1, 3, 5 and 10 % Bi (weight %) as ternary additions on structure, melting and mechanical properties of rapidly solidified Sn-3.5Ag alloy has been investigated. The effect of Bi was discussed based on the experimental results. The experimental results showed that the alloys of Sn-3.5Ag, Sn-3.5Ag-1Bi and Sn-3.5Ag-3Bi are composed of two phases; Ag{sub 3}Sn IMC embedded in Sn matrix phase, which indicated that the solubility of Bi phase in Sn-matrix was extended to 3 % as a result of rapid solidification. Bi precipitation in Sn matrix was only observed in Sn-3.5Ag-5Bi and Sn-3.5Ag-10Bi alloys. Also, addition of Bi decreased continuously the melting point of the eutectic Sn-3.5Ag alloy to 202.6 C at 10 % Bi. Vickers hardness of Sn-3.5Ag rapidly solidified alloy increased with increasing Bi content up to 3 % due to supersaturated solid solution strengthening hardening mechanism of Bi phase in Sn matrix, while the alloys contain 5 and 10 % Bi exhibited lower values of Vickers hardness. The lower values can be attributed to the precipitation of Bi as a secondary phase which may form strained regions due to the embrittlement of Bi atom. In addition, the effect of Bi addition on the micro-creep behavior of Sn-3.5Ag alloy as well as the creep rate have been described and has been calculated at room temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

ANÁLISE DE AGRUPAMENTO DO IMC E DO IAC E DA RELAÇÃO IAC/IMC EM INDIVÍDUOS COM IDADE ENTRE 6 A 15 ANOS

Directory of Open Access Journals (Sweden)

Julião Soares de Souza Lima Junior

2016-11-01

Full Text Available Conhecer as relações entre dados antropométricos e o estado nutricional das pessoas ajuda no entendimento das tendências em uma população. Este trabalho teve o objetivo de determinar em 62 jovens com idade entre 6 a 15 anos o IMC, o IAC e a relação entre IAC/IMC e utilizar método para agrupamento dos indivíduos. Os dados foram analisados por estatística descritiva e o método de agrupamento Joining. O IMC, o IAC e a Relação IAC/IMC, apresentaram os valores médios de 18,88; 27,62 e 1,51, respectivamente. Os grupos 1 e 2 apresentaram médias maiores que a média geral dos dados para o IMC. Os grupos 2, 3 e 4 apresentaram maiores valores médios que a média geral dos dados para o IAC. Os grupos 3 e 4 com média maior que a media geral para a relação IAC/IMC. Maiores relações de IAC/IMC ocorrem para indivíduos que apresentam menores valores de IMC e os maiores de IAC. O IMC aumenta com a idade e o IAC diminui à medida que a idade aumenta.

Influence of the Si content on the microstructure and mechanical properties of Ti-Ni-Cu-Si-Sn nanocomposite alloys

Energy Technology Data Exchange (ETDEWEB)

Fornell, J., E-mail: Jordinafornell@gmail.com [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Van Steenberge, N. [OCAS N.V., Pres. J.F. Kennedylaan 3, BE-9060 Zelzate (Belgium); Surinach, S.; Baro, M.D. [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Sort, J. [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Institucio Catalana de Recerca i Estudis Avancats (Spain)

2012-09-25

Highlights: Black-Right-Pointing-Pointer We study the effects of Si addition of Ti-Ni-Cu-Si-Sn alloy. Black-Right-Pointing-Pointer The microstructure evolution is correlated with the obtained mechanical and elastic properties. Black-Right-Pointing-Pointer Higher Young's modulus and larger hardness values are obtained in samples with higher Si contents. - Abstract: (Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4}){sub 100-x}Si{sub x} (x = 0, 2, 4 and 6) alloys were prepared by levitation melting mixtures of the high purity elements in an Ar atmosphere. Rods of 3 mm in diameter were obtained from the melt by copper mould casting. The effects of Si addition on the microstructure, elastic and mechanical properties of the Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} alloy were investigated by scanning electron microscopy, X-ray diffraction, acoustic measurements and nanoindentation. The main phases composing the Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} alloy are B2 NiTi, B19 Prime NiTi and tetragonal Ti{sub 2}Ni. Additional phases, like Ti{sub 5}Si{sub 3} or Ni{sub 2}Ti{sub 2}Si, become clearly visible in samples with higher Si contents. The microstructure evolution is correlated with the obtained mechanical and elastic properties. These alloys exhibit very high hardness values, which increase with the Si content, from 9 GPa (for x = 0) to around 10.5 GPa (for x = 6). The Young's modulus of Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} (around 115 GPa) also increases significantly with Si addition, up to 160 GPa for x = 6.

Correlation between the resistivity and the atomic clusters in liquid Cu-Sn alloys

Science.gov (United States)

Jia, Peng; Zhang, Jinyang; Hu, Xun; Li, Cancan; Zhao, Degang; Teng, XinYing; Yang, Cheng

2018-05-01

The liquid structure of CuxSn100-x (x = 0, 10, 20, 33, 40, 50, 60, 75, 80 and 100) alloys with atom percentage were investigated with resistivity and viscosity methods. It can be found from the resistivity data that the liquid Cu75Sn25 and Cu80Sn20 alloys had a negative temperature coefficient of resistivity (TCR), and liquid Cu75Sn25 alloy had a minimum value of -9.24 μΩ cm K-1. While the rest of liquid Cu-Sn alloys had a positive TCR. The results indicated that the Cu75Sn25 atomic clusters existed in Cu-Sn alloys. In addition, the method of calculating the percentage of Cu75Sn25 atomic clusters was established on the basis of resistivity theory and the law of conservation of mass. The Cu75Sn25 alloy had a maximum volume of the atomic clusters and a highest activation energy. The results further proved the existence of Cu75Sn25 atomic clusters. Furthermore, the correlation between the liquid structure and the resistivity was established. These results provide a useful reference for the investigation of liquid structure via the sensitive physical properties to the liquid structure.

All Small Nuclear RNAs (snRNAs) of the [U4/U6.U5] Tri-snRNP Localize to Nucleoli; Identification of the Nucleolar Localization Element of U6 snRNA

Science.gov (United States)

Gerbi, Susan A.; Lange, Thilo Sascha

2002-01-01

Previously, we showed that spliceosomal U6 small nuclear RNA (snRNA) transiently passes through the nucleolus. Herein, we report that all individual snRNAs of the [U4/U6.U5] tri-snRNP localize to nucleoli, demonstrated by fluorescence microscopy of nucleolar preparations after injection of fluorescein-labeled snRNA into Xenopus oocyte nuclei. Nucleolar localization of U6 is independent from [U4/U6] snRNP formation since sites of direct interaction of U6 snRNA with U4 snRNA are not nucleolar localization elements. Among all regions in U6, the only one required for nucleolar localization is its 3′ end, which associates with the La protein and subsequently during maturation of U6 is bound by Lsm proteins. This 3′-nucleolar localization element of U6 is both essential and sufficient for nucleolar localization and also required for localization to Cajal bodies. Conversion of the 3′ hydroxyl of U6 snRNA to a 3′ phosphate prevents association with the La protein but does not affect U6 localization to nucleoli or Cajal bodies. PMID:12221120

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

Energy Technology Data Exchange (ETDEWEB)

Varley, J. B.; Lordi, V. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

2014-08-14

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.

Successive ionic layer adsorption and reaction deposited kesterite Cu2ZnSnS4 nanoflakes counter electrodes for efficient dye-sensitized solar cells

International Nuclear Information System (INIS)

Mali, Sawanta S.; Shim, Chang Su; Hong, Chang Kook

2014-01-01

Highlights: • Cu 2 ZnSnS 4 nanoflakes by SILAR technique. • Hydrothermal synthesis of TiO 2 . • Counter electrode for DSSC application. • 4.48% conversion efficiency. - Abstract: In this investigation, we have successfully synthesized Cu 2 ZnSnS 4 (CZTS) nanoflakes by successive ionic layer adsorption and reaction (SILAR) method and used as a counter electrode in the hydrothermally grown TiO 2 based dye sensitized solar cells (DSSCs). The prepared CZTS nanoflakes were characterized using X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and energy dispersive analysis. Our DSSCs results revealed that, compared with conventional Pt/FTO counter electrode DSSCs, nanoflakes of p-type CZTS as the photocathode and n-type TiO 2 thin films as the photoanode shows an increased short circuit current (13.35 mA/cm 2 ) with 4.84% power conversion efficiency. The detailed interface properties of were analyzed by electrochemical impedance spectroscopy (EIS) measurements

Correlation between zirconium oxide impedance and corrosion behavior of Zr-Nb-Sn-Fe-Cu alloys

International Nuclear Information System (INIS)

Park, Sang Yoon; Lee, Myung Ho; Choi, Byoung Kwon; Jeong, Yong Hwan; Jung, Youn Ho

2001-01-01

To evaluate the correlation of Zr oxide impedance and corrosion behavior of Zr-Nb-Sn-Fe-Cu alloys, the corrosion behavior of the alloys was tested in the autoclave containing 70 ppm LiOH solution at 360 .deg. C. The characteristics of the oxide on the alloys were investigated by using the electrochemical impedance spectrosocpy (EIS) method. The corrosion resistance of the alloys was evaluated from the corrosion rate determined as a function of the concentration of Nb. The equivalent circuit of the oxide was composed on the base of the spectrum from EIS measurements on the oxide layers that had formed at pre-and post-transition regions on the curve of corrosion rate. By using the capacitance characteristics of the equivalent circuit, the thickness of impervious layer, it's electrical resistance and characteristics of space charge layer were evaluated. The corrosion characteristics of the Zr-Nb-Sn-Fe-Cu alloys were successfully explained by applying the EIS test results

The Effect of Increasing Sn Content on High-Temperature Mechanical Deformation of an Mg-3%Cu-1%Ca Alloy

Directory of Open Access Journals (Sweden)

Georgios S.E. Antipas

2013-11-01

Full Text Available Chill casting of magnesium alloy samples with secondary alloying elements of Cu, Ca and Sn at % w.t. concentrations in the range 1–5, 0.1–5 and 0.1–3 respectively, gave rise to appreciably enhanced resistance to high-temperature creep, while maintaining good heat conductivity. The latter was considered to be driven by Cu and Mg-Cu intermetallics while it was clear that Sn mediated the high-temperature performance, mainly via networks of Mg2Sn and MgCaSn precipitates along the Mg matrix grain boundaries. It was postulated that Sn formed intermetallics by preferential substitution of Ca atoms and, thus, did not degrade the heat conductivity by retaining Cu. The % w.t. stoichiometry with the optimum combination of heat conductivity and resistance to high-temperature creep was found to be Mg-3Cu-1Ca-0.1Sn.

High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

Energy Technology Data Exchange (ETDEWEB)

Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Bourgès, Cédric; Barbier, Tristan [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France); Nassif, Vivian [CNRS Institut NEEL, F-38000 Grenoble (France); Université de Grenoble Alpes, Institut NEEL, F-38000 Grenoble (France); Cordier, Stéphane [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Guilmeau, Emmanuel [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France)

2017-03-15

Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.

Synthesis and Characterization of an Earth-Abundant Cu2BaSn(S,Se)4 Chalcogenide for Photoelectrochemical Cell Application.

Science.gov (United States)

Shin, Donghyeop; Ngaboyamahina, Edgard; Zhou, Yihao; Glass, Jeffrey T; Mitzi, David B

2016-11-17

Cu 2 BaSnS 4-x Se x films consisting of earth-abundant metals have been examined for photocathode application. Films with different Se contents (i.e., Cu 2 BaSnS 4-x Se x with x ≤ 2.4) were synthesized using a cosputter system with post-deposition sulfurization/selenization annealing treatments. Each film adopts a trigonal P3 1 crystal structure, with progressively larger lattice constants and with band gaps shifting from 2.0 to 1.6 eV, as more Se substitutes for S in the parent compound Cu 2 BaSnS 4 . Given the suitable bandgap and earth-abundant elements, the Cu 2 BaSnS 4-x Se x films were studied as prospective photocathodes for water splitting. Greater than 6 mA/cm 2 was obtained under illumination at -0.4 V versus reversible hydrogen electrode for Pt/Cu 2 BaSnS 4-x Se x films with ∼60% Se content (i.e., x = 2.4), whereas a bare Cu 2 BaSnS 4-x Se x (x = 2.4) film yielded ∼3 mA/cm 2 at -0.4 V/RHE.

Effects of Metallic Nanoparticles on Interfacial Intermetallic Compounds in Tin-Based Solders for Microelectronic Packaging

Science.gov (United States)

Haseeb, A. S. M. A.; Arafat, M. M.; Tay, S. L.; Leong, Y. M.

2017-10-01

Tin (Sn)-based solders have established themselves as the main alternative to the traditional lead (Pb)-based solders in many applications. However, the reliability of the Sn-based solders continues to be a concern. In order to make Sn-based solders microstructurally more stable and hence more reliable, researchers are showing great interest in investigating the effects of the incorporation of different nanoparticles into them. This paper gives an overview of the influence of metallic nanoparticles on the characteristics of interfacial intermetallic compounds (IMCs) in Sn-based solder joints on copper substrates during reflow and thermal aging. Nanocomposite solders were prepared by mechanically blending nanoparticles of nickel (Ni), cobalt (Co), zinc (Zn), molybdenum (Mo), manganese (Mn) and titanium (Ti) with Sn-3.8Ag-0.7Cu and Sn-3.5Ag solder pastes. The composite solders were then reflowed and their wetting characteristics and interfacial microstructural evolution were investigated. Through the paste mixing route, Ni, Co, Zn and Mo nanoparticles alter the morphology and thickness of the IMCs in beneficial ways for the performance of solder joints. The thickness of Cu3Sn IMC is decreased with the addition of Ni, Co and Zn nanoparticles. The thickness of total IMC layer is decreased with the addition of Zn and Mo nanoparticles in the solder. The metallic nanoparticles can be divided into two groups. Ni, Co, and Zn nanoparticles undergo reactive dissolution during solder reflow, causing in situ alloying and therefore offering an alternative route of alloy additions to solders. Mo nanoparticles remain intact during reflow and impart their influence as discrete particles. Mechanisms of interactions between different types of metallic nanoparticles and solder are discussed.

Porous SnO2-CuO nanotubes for highly reversible lithium storage

Science.gov (United States)

Cheong, Jun Young; Kim, Chanhoon; Jung, Ji-Won; Yoon, Ki Ro; Kim, Il-Doo

2018-01-01

Facile synthesis of rationally designed structures is critical to realize a high performance electrode for lithium-ion batteries (LIBs). Among different candidates, tin(IV) oxide (SnO2) is one of the most actively researched electrode materials due to its high theoretical capacity (1493 mAh g-1), abundance, inexpensive costs, and environmental friendliness. However, severe capacity decay from the volume expansion and low conductivity of SnO2 have hampered its use as a feasible electrode for LIBs. Rationally designed SnO2-based nanostructures with conductive materials can be an ideal solution to resolve such limitations. In this work, we have successfully fabricated porous SnO2-CuO composite nanotubes (SnO2-CuO p-NTs) by electrospinning and subsequent calcination step. The porous nanotubular structure is expected to mitigate the volume expansion of SnO2, while the as-formed Cu from CuO upon lithiation allows faster electron transport by improving the low conductivity of SnO2. With a synergistic effect of both Sn and Cu-based oxides, SnO2-CuO p-NTs deliver stable cycling performance (91.3% of capacity retention, ∼538 mAh g-1) even after 350 cycles at a current density of 500 mA g-1, along with enhanced rate capabilities compared with SnO2.

Effect of phosphorus element on the comprehensive properties of Sn-Cu lead-free solder

International Nuclear Information System (INIS)

Li Guangdong; Shi Yaowu; Hao Hu; Xia Zhidong; Lei Yongping; Guo Fu

2010-01-01

In the present work, the effect of phosphorus on the creep fatigue properties of Sn-Cu eutectic lead-free solder was carried out. The experimental results show that the melting temperature was almost not changed with adding small amount of P element. However, the addition of trace P element led to the decrease in the property of creep fatigue. The fractography analysis by a scanning electron microscopy (SEM) shows that ductile fracture was the dominant failure behavior in the process of creep fatigue test of Sn0.7Cu and Sn0.7Cu0.005P specimens. It should be pointed out that there is significant difference in the fractographs between the joints of Sn0.7Cu solder and Sn0.7Cu0.005P solder. In the fractograph of Sn0.7Cu solder joint, the microstructure is prolonged along testing direction, and the dimples were more than the fractograph of Sn0.7Cu0.005P solder joint. In addition, the voids could be found on the Sn0.7Cu0.005P solder joint, and trace P addition may increase the rate of forming void of Sn0.7Cu solder joint. The voids can potentially lead to crack initiation or propagation sites in the solder joint. As a result, the creep fatigue of solder joint containing P such as Sn0.7Cu0.005P offers worse property compared to Sn0.7Cu solder joint.

Effect of phosphorus element on the comprehensive properties of Sn-Cu lead-free solder

Energy Technology Data Exchange (ETDEWEB)

Li Guangdong, E-mail: liguangdong@emails.bjut.edu.c [College of Materials Science and Engineering, Beijing University of Technology, 100 Ping Le Yuan, Chaoyang District, Beijing 100124 (China); Shi Yaowu; Hao Hu; Xia Zhidong; Lei Yongping; Guo Fu [College of Materials Science and Engineering, Beijing University of Technology, 100 Ping Le Yuan, Chaoyang District, Beijing 100124 (China)

2010-02-18

In the present work, the effect of phosphorus on the creep fatigue properties of Sn-Cu eutectic lead-free solder was carried out. The experimental results show that the melting temperature was almost not changed with adding small amount of P element. However, the addition of trace P element led to the decrease in the property of creep fatigue. The fractography analysis by a scanning electron microscopy (SEM) shows that ductile fracture was the dominant failure behavior in the process of creep fatigue test of Sn0.7Cu and Sn0.7Cu0.005P specimens. It should be pointed out that there is significant difference in the fractographs between the joints of Sn0.7Cu solder and Sn0.7Cu0.005P solder. In the fractograph of Sn0.7Cu solder joint, the microstructure is prolonged along testing direction, and the dimples were more than the fractograph of Sn0.7Cu0.005P solder joint. In addition, the voids could be found on the Sn0.7Cu0.005P solder joint, and trace P addition may increase the rate of forming void of Sn0.7Cu solder joint. The voids can potentially lead to crack initiation or propagation sites in the solder joint. As a result, the creep fatigue of solder joint containing P such as Sn0.7Cu0.005P offers worse property compared to Sn0.7Cu solder joint.

Corrosion behavior of Zr-x(Nb, Sn and Cu) binary alloys

International Nuclear Information System (INIS)

Kim, M. H.; Lee, M. H.; Park, S. Y.; Jung, Y. H.; We, M. Y.

1999-01-01

For the development of advanced zirconium alloys for nuclear fuel cladding, the corrosion behaviors of zirconium binary alloys were studied on the Zr-xNb, Zr-xSn, and Zr-xCu alloys. The corrosion test were performed in water at 360 deg C, steam at 400 deg C and LiOH at 360 deg C for 45 days. The corrosion behaviors of Zr-xNb was similar to that of Zr-xCu alloys. However, the corrosion behavior of Zr-xSn was different from Zr-xNb and Zr-xCu. The weight gain of Zr-xNb and Zr-xCu was increased with addition of alloying elements. When Sn is added to Zr matrix in range below the solubility limit, the corrosion resistance decrease with increasing Sn-content, while in the range over solubility limit, Sn has an adverse effect on the corrosion resistance. Especially, Zr-xSn alloys showed higher corrosion resistance than Zr-xNb and Zr-xCu alloys in LiOH solution

3D macroporous electrode and high-performance in lithium-ion batteries using SnO2 coated on Cu foam

Science.gov (United States)

Um, Ji Hyun; Choi, Myounggeun; Park, Hyeji; Cho, Yong-Hun; Dunand, David C.; Choe, Heeman; Sung, Yung-Eun

2016-01-01

A three-dimensional porous architecture makes an attractive electrode structure, as it has an intrinsic structural integrity and an ability to buffer stress in lithium-ion batteries caused by the large volume changes in high-capacity anode materials during cycling. Here we report the first demonstration of a SnO2-coated macroporous Cu foam anode by employing a facile and scalable combination of directional freeze-casting and sol-gel coating processes. The three-dimensional interconnected anode is composed of aligned microscale channels separated by SnO2-coated Cu walls and much finer micrometer pores, adding to surface area and providing space for volume expansion of SnO2 coating layer. With this anode, we achieve a high reversible capacity of 750 mAh g−1 at current rate of 0.5 C after 50 cycles and an excellent rate capability of 590 mAh g−1 at 2 C, which is close to the best performance of Sn-based nanoscale material so far. PMID:26725652

Composition controlled preparation of Cu–Zn–Sn precursor films for Cu{sub 2}ZnSnS{sub 4} solar cells using pulsed electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Dang, Wenping; Ren, Xiaodong; Zi, Wei; Jia, Lujian [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023 (China)

2015-11-25

A pulsed electrodeposition technique is developed to prepare Cu–Zn–Sn (CZT) precursor films for the Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells. The CZT precursor films are co-deposited on Mo-coated substrate using a cyanide-free electrolyte containing Zn (II) and Sn (II) salts. During the deposition, CuSO{sub 4} solution is supplied at controlled rate using a peristaltic pump to effectively regulate Cu{sup 2+} concentration. In addition, C{sub 6}H{sub 5}Na{sub 3}O{sub 7} is used as a coordination ligand to further balance activities of the Cu{sup 2+}, Sn{sup 2+} and Zn{sup 2+}. The CZTS films are then prepared using a sulfurization process to convert the electrodeposited CZT precursors at 580 °C in a sulphur atmosphere. The annealed thin films are characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties. It is found that the addition rate of Cu (II) has significant effects on the properties of the CZTS thin films. The CZTS film prepared using the optimized copper addition rate (0.15 ml/min) shows pure kesterite phase, Cu-poor and Zn-rich composition, compact morphology and good band gap ∼1.45 eV. Solar cells using the structure glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al achieves a respectable external quantum efficiency and solar cell efficiency. - Highlights: • Developed a composition controlled pulsed electrodeposition for CZTS solar cells. • Electrochemistry and CZT composition regulated by measured Cu supply rate. • Complex chemistry used to regulate ion activities and electrodeposition. • Achieved a respectable CZTS solar cell quantum efficiency.

Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

Directory of Open Access Journals (Sweden)

Hongtao Cui

2015-01-01

Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

Controlled Synthesis of Heterostructured SnO2-CuO Composite Hollow Microspheres as Efficient Cu-Based Catalysts for the Rochow Reaction

Directory of Open Access Journals (Sweden)

Hezhi Liu

2018-04-01

Full Text Available In this work, we report the design and synthesis of a series of heterostructured SnO2-CuO hollow microspherical catalysts (H-SnO2(x-CuO, x is the weight ratio of Sn/Cu for the Rochow reaction. The microspherical catalysts with nanosheets and nanoparticles as building blocks were prepared by a facile one-pot hydrothermal method coupled with calcination. When tested for the Rochow reaction, the prepared H-SnO2(0.2-CuO composite exhibited higher dimethyldichlorosilane selectivity (88.2% and Si conversion (36.7% than the solid CuO, hollow CuO and other H-SnO2(x-CuO microspherical samples, because in the former there is a stronger synergistic interaction between CuO and SnO2.

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Science.gov (United States)

Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

2018-03-01

We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

Combinatorial development of Cu2SnS3 as an earth abundant photovoltaic absorber

Science.gov (United States)

Baranowski, Lauryn L.

The development of high efficiency, earth abundant photovoltaic absorbers is critical if photovoltaics are to be implemented on the TW scale. Although traditional thin films absorbers such as Cu(In,Ga)Se2 and CdTe have achieved over 20% device efficiencies, the ultimately scalability of these devices may be limited by elemental scarcity and toxicity issues. To date, the most successful earth abundant thin film absorber is Cu2ZnSn(S,Se) 4, which has achieved 12.6% efficiency as of 2014. However, chemical complexity and disorder issues with this material have made the path to higher efficiency CZTSSe devices unclear. As a result, many researchers are now exploring alternative earth abundant absorber materials. In this thesis, we apply our "rapid development" methodology to the exploration of alternative photovoltaic absorbers. The rapid development (RD) methodology, consisting of exploration, research, and development stages, uses complementary theory and experiment to assess candidate materials and down-select in each stage. The overall result is that, in the time span of ~2-3 years, we are able to rapidly go from tens of possible absorber materials to 1-2 working PV device prototypes. Here, we demonstrate the RD approach as applied to the Cu-Sn-S system. We begin our investigation of the Cu-Sn-S system by evaluating the thermodynamic stability, electrical transport, electronic structure, and optical and defect properties of candidate materials using complementary theory and experiment. We find that Cu2SnS3 is the most promising absorber candidate because of its strong optical absorption, tunable doping, and wide stability range. Our other candidate compounds suffer from serious flaws that preclude them from being successful photovoltaic absorbers, including too high experimental conductivity (Cu4SnS4), or poor hole transport and low absorption coefficient (Cu4Sn7S16). Next, we investigate the doping and defect physics of Cu2SnS 3. We identify the origins of the

Preparation, characterization and photocatalytic studies of Cu , Sn ...

Indian Academy of Sciences (India)

method. Metal ions (Cu2+ and Sn2+), and non-metal anion, N3−, were substituted into the K5Sb5P2O20 for pos- ... in the photocatalytic reaction was studied using their appropriate scavengers. Keywords. ... K5Sb5P2O20 and exchange of its potassium with copper and tin ions ... distilled water and dried in air at 100. ◦. C.

The Effect of CuSn Intermetallics on the Interstrand Contact Resistance in Superconducting Cables for the Large Hadron Collider (LHC)

CERN Document Server

Scheuerlein, C; Jacob, P; Leroy, D; Oberli, L R; Taborelli, M

2005-01-01

The LHC superconducting cables are submitted to a 200°C heat-treatment in air in order to increase the resistance between the crossing strands (RC) within the cable. During this treatment the as-applied Sn-Ag alloy strand coating is transformed into a CuSn intermetallic compound layer. The microstructure, the surface topography and the surface chemistry of the non-reacted and reacted coatings have been characterised by different techniques, notably focused ion beam (FIB), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). Based on the results obtained by these techniques the different influences that the intermetallics have on RC are discussed. The desired RC is obtained only when a continuous Cu3Sn layer is formed, i.e. a sufficient wetting of the Cu substrate by the tinning alloy is crucial. Among other effects the formation of the comparatively hard intermetallics roughens the surface and, thus, reduces the true contact area and i...

Damage behavior of SnAgCu/Cu solder joints subjected to thermomechanical cycling

International Nuclear Information System (INIS)

Xiao, H.; Li, X.Y.; Hu, Y.; Guo, F.; Shi, Y.W.

2013-01-01

Highlights: •A creep–fatigue damage model based on CDM was proposed. •Designed system includes load frame, strain measure device and damage test device. •Damage evolution of solder joints was a function of accumulated inelastic strain. •Damage of solder joints is an interaction between creep and low-cycle fatigue. -- Abstract: Thermomechanical fatigue damage is a progressive process of material degradation. The objective of this study was to investigate the damage behavior of SnAgCu/Cu solder joints under thermomechanical cycling. A damage model was proposed based on continuum damage mechanics (CDM). Based upon an analysis of displacements for flip-chip solder joints subjected to thermal cycling, a special bimetallic loading frame with single-solder joint samples was designed to simulate the service conditions of actual joints in electronic packages. The assembly, which allowed for strain measurements of an individual solder joint during temperature cycling, was used to investigate the impact of stress–strain cycling on the damage behavior of SnAgCu/Cu solder joints. The characteristic parameters of the damage model were determined through thermomechanical cycling and strain measurement tests. The damage variable D = 1 − R 0 /R was selected, and values for it were obtained using a four-probe method for the single-solder joint samples every dozen cycles during thermomechanical cycling tests to verify the model. The results showed that the predicted damage was in good agreement with the experimental results. The damage evolution law proposed here is a function of inelastic strain, and the results showed that the damage rate of SnAgCu/Cu solder joints increased as the range of the applied strain increased. In addition, the microstructure evolution of the solder joints was analyzed using scanning electron microscopy, which provided the microscopic explanation for the damage evolution law of SnAgCu/Cu solder joints

Damage behavior of SnAgCu/Cu solder joints subjected to thermomechanical cycling

Energy Technology Data Exchange (ETDEWEB)

Xiao, H., E-mail: xiaohui2013@yahoo.com.cn; Li, X.Y.; Hu, Y.; Guo, F.; Shi, Y.W.

2013-11-25

Highlights: •A creep–fatigue damage model based on CDM was proposed. •Designed system includes load frame, strain measure device and damage test device. •Damage evolution of solder joints was a function of accumulated inelastic strain. •Damage of solder joints is an interaction between creep and low-cycle fatigue. -- Abstract: Thermomechanical fatigue damage is a progressive process of material degradation. The objective of this study was to investigate the damage behavior of SnAgCu/Cu solder joints under thermomechanical cycling. A damage model was proposed based on continuum damage mechanics (CDM). Based upon an analysis of displacements for flip-chip solder joints subjected to thermal cycling, a special bimetallic loading frame with single-solder joint samples was designed to simulate the service conditions of actual joints in electronic packages. The assembly, which allowed for strain measurements of an individual solder joint during temperature cycling, was used to investigate the impact of stress–strain cycling on the damage behavior of SnAgCu/Cu solder joints. The characteristic parameters of the damage model were determined through thermomechanical cycling and strain measurement tests. The damage variable D = 1 − R{sub 0}/R was selected, and values for it were obtained using a four-probe method for the single-solder joint samples every dozen cycles during thermomechanical cycling tests to verify the model. The results showed that the predicted damage was in good agreement with the experimental results. The damage evolution law proposed here is a function of inelastic strain, and the results showed that the damage rate of SnAgCu/Cu solder joints increased as the range of the applied strain increased. In addition, the microstructure evolution of the solder joints was analyzed using scanning electron microscopy, which provided the microscopic explanation for the damage evolution law of SnAgCu/Cu solder joints.

Optoelectronic characterizations of vacuum evaporated Cu 2 SnS 3 ...

African Journals Online (AJOL)

... of non-toxic, cheap earthly abundant, ternary compound of Cu2SnS3 thin film. ... film were investigated by X-Ray Diffraction and Scanning Electron Microscope. ... to determine the electrical properties of the deposited Cu2SnS3 ternary films.

Microstructure and adhesion strength of Sn-9Zn-xAg lead-free solders wetted on Cu substrate

International Nuclear Information System (INIS)

Chang, T.-C.; Chou, S.-M.; Hon, M.-H.; Wang, M.-C.

2006-01-01

The microstructure and adhesion strength of the Sn-9Zn-xAg lead-free solders wetted on Cu substrates have been investigated by differential scanning calorimetry, optical microscopy, scanning electron microscopy, energy dispersive spectrometry and pull-off testing. The liquidus temperatures of the Sn-9Zn-xAg solder alloys are 222.1, 226.7, 231.4 and 232.9 deg. C for x = 2.5, 3.5, 5.0 and 7.5 wt%, respectively. A flat interface can be obtained as wetted at 350 deg. C at a rate of 11.8 mm/s. The adhesion strength of the Sn-9Zn-xAg/Cu interfaces decreases from 23.09 ± 0.31 to 12.32 ± 1.40 MPa with increasing Ag content from 2.5 to 7.5 wt% at 400 deg. C. After heat treatment at 150 deg. C, the adhesion strength of the Sn-9Zn-xAg/Cu interface decreases with increasing aging time

Subgrain Rotation Behavior in Sn3.0Ag0.5Cu-Sn37Pb Solder Joints During Thermal Shock

Science.gov (United States)

Han, Jing; Tan, Shihai; Guo, Fu

2018-01-01

Ball grid array (BGA) samples were soldered on a printed circuit board with Sn37Pb solder paste to investigate the recrystallization induced by subgrain rotation during thermal shock. The composition of the solder balls was Sn3.0Ag0.5Cu-Sn37Pb, which comprised mixed solder joints. The BGA component was cross-sectioned before thermal shock. The microstructure and grain orientations were obtained by a scanning electron microscope equipped with an electron back-scattered diffraction system. Two mixed solder joints at corners of the BGA component were selected as the subjects. The results showed that recrystallization occurred at the corner of the solder joints after 200 thermal shock cycles. The recrystallized subgrains had various new grain orientations. The newly generated grain orientations were closely related to the initial grain orientations, which indicated that different subgrain rotation behaviors could occur in one mixed solder joint with the same initial grain orientation. When the misorientation angles were very small, the rotation axes were about Sn [100], [010] and [001], as shown by analyzing the misorientation angles and subgrain rotation axes, while the subgrain rotation behavior with large misorientation angles in the solder joints was much more complicated. As Pb was contained in the solder joints and the stress was concentrated on the corner of the mixed solder joints, concaves and cracks were formed. When the adjacent recrystallized subgrains were separated, and the process of the continuous recrystallization was limited.

TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn superlattices for thermoelectrics

Energy Technology Data Exchange (ETDEWEB)

Jaeger, Tino; Jakob, Gerhard [Institut fuer Physik, Universitaet Mainz, 55099 Mainz (Germany); Schwall, Michael; Kozina, Xeniya; Balke, Benjamin; Felser, Claudia [Institut fuer Analytische und Anorganische Chemie, Universitaet Mainz, 55099 Mainz (Germany); Populoh, Sascha; Weidenkaff, Anke [EMPA, Ueberlandstrasse 129, 8600 Duebendorf (Switzerland)

2012-07-01

In order to increase the attractiveness of thermoelectric devices, their efficiency must be increased. Beside others, the properties of the thermoelectric material can be improved. That can be achieved by either increasing Seebeck coefficient or conductivity or by a depressed thermal conductivity along the thermal gradient. For thin films, superlattices or multilayers can be used to lower the cross plane thermal conductivity. As a bottom up approach, artificially layered films with a periodicity of about 5-6 nm are assumed to generate the most phonon scattering at the interfaces. If electrical properties remain unchanged or less effected, the thermoelectric efficiency is enhanced. Semiconducting Half-Heuslers are well studied thermoelectric bulk materials. Among others, TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn are potential candidates. Essentially, their similar lattice constants enable epitaxial layers on top of each other. Furthermore, varied atomic masses of Ti, Zr and Hf generate the aspired alternating mass distribution. By rotating the substrate in between simultaneously burning cathodes, significant film thicknesses can be achieved by sputter deposition.

Evaporation of Cu, Sn, and S from Fe-C-Cu-Sn-S Liquid Alloys in the Temperature Range from 1513 K to 1873 K (1240 °C to 1600 °C)

Science.gov (United States)

Tafwidli, Fahmi; Choi, Moo-Eob; Yi, Sang-Ho; Kang, Youn-Bae

2018-06-01

Evaporation of Cu or Sn from liquid iron alloys containing C and S was experimentally investigated. The initial C concentration, [pct C]0, in the liquid alloy was varied from zero to C saturation, and the evaporation temperature was varied from 1513 K to 1773 K (1240 °C to 1500 °C). Along with the report by one of the present authors, the evaporation mechanism of Cu and Sn from liquid Fe-C-S alloy is proposed, after a modification from the previous mechanism. It was proposed that Cu and Sn evaporate as Cu(g) and Sn(g) and also evaporate as CuS(g) and SnS(g), which are more volatile species. Therefore, availability of S in the alloy affects the overall evaporation rate of Cu and Sn. At the same time, C in the alloy also forms volatile carbosulfides CS(g) and CS2(g), thereby competing with Cu and Sn. Moreover, C increases the activity coefficients of Cu, Sn, and S. This increases the thermodynamic driving force for the formation of CuS(g) and SnS(g). Therefore, increasing [pct C] partly accelerates the evaporation rate of Cu and Sn by increasing the activity coefficient but partly decelerates the evaporation rate by lowering the available S content. S partly accelerates the evaporation rate by increasing the available S for the sulfide gas species but partly decelerates the evaporation rate due to the surface poisoning effect. Increasing the reaction temperature increases the overall evaporation rate. All these facts were taken into account in order to develop an evaporation rate model. This model was extended from the present authors' previous one by taking into account (1) CS(g), S(g), and CS2(g) (therefore, the following species were considered as dominant evaporating species: Cu(g), CuS(g), Sn(g), SnS(g), S(g), CS(g), and CS2(g)); (2) the effect of C and temperature on the activity coefficients of Cu, Sn, and S; (3) the effect of C and temperature on the density of the liquid alloy; and (4) the effect of temperature on the S adsorption coefficient. This revised

Evaporation of Cu, Sn, and S from Fe-C-Cu-Sn-S Liquid Alloys in the Temperature Range from 1513 K to 1873 K (1240 °C to 1600 °C)

Science.gov (United States)

Tafwidli, Fahmi; Choi, Moo-Eob; Yi, Sang-Ho; Kang, Youn-Bae

2018-02-01

Evaporation of Cu or Sn from liquid iron alloys containing C and S was experimentally investigated. The initial C concentration, [pct C]0, in the liquid alloy was varied from zero to C saturation, and the evaporation temperature was varied from 1513 K to 1773 K (1240 °C to 1500 °C). Along with the report by one of the present authors, the evaporation mechanism of Cu and Sn from liquid Fe-C-S alloy is proposed, after a modification from the previous mechanism. It was proposed that Cu and Sn evaporate as Cu(g) and Sn(g) and also evaporate as CuS(g) and SnS(g), which are more volatile species. Therefore, availability of S in the alloy affects the overall evaporation rate of Cu and Sn. At the same time, C in the alloy also forms volatile carbosulfides CS(g) and CS2(g), thereby competing with Cu and Sn. Moreover, C increases the activity coefficients of Cu, Sn, and S. This increases the thermodynamic driving force for the formation of CuS(g) and SnS(g). Therefore, increasing [pct C] partly accelerates the evaporation rate of Cu and Sn by increasing the activity coefficient but partly decelerates the evaporation rate by lowering the available S content. S partly accelerates the evaporation rate by increasing the available S for the sulfide gas species but partly decelerates the evaporation rate due to the surface poisoning effect. Increasing the reaction temperature increases the overall evaporation rate. All these facts were taken into account in order to develop an evaporation rate model. This model was extended from the present authors' previous one by taking into account (1) CS(g), S(g), and CS2(g) (therefore, the following species were considered as dominant evaporating species: Cu(g), CuS(g), Sn(g), SnS(g), S(g), CS(g), and CS2(g)); (2) the effect of C and temperature on the activity coefficients of Cu, Sn, and S; (3) the effect of C and temperature on the density of the liquid alloy; and (4) the effect of temperature on the S adsorption coefficient. This revised

Study on sensing mechanism of CuO-SnO2 gas sensors

International Nuclear Information System (INIS)

Zhou Xiaohua; Cao Quanxi; Huang Hui; Yang Peng; Hu Ying

2003-01-01

The preparations of SnO 2 and CuO powders and the manufacture of CuO-SnO 2 gas sensors are described in some details. The CuO content was chosen as 1.5 mol.% (sample 1), 4.4 mol.% (sample 2), 8.4 mol.% (sample 3) and 12.5 mol.% (sample 4), respectively. The resistance of all samples in air and their sensitive properties to H 2 S, alcohol vapor, C 4 H 10 and CH 2 were measured in the temperature range 20-300 deg. C, respectively. The results show that the resistance of all samples decreases exponentially with increasing temperature, when the temperature is >31 deg. C and it increases with an increase in CuO content at a given temperature. Sample 3 exhibits the best sensitive property in the case of the same H 2 S-air mixture concentration and excellent selectivity. The sensitive mechanisms of these samples to different gases are discussed in details

Microstructural evolution and tensile properties of Sn-Ag-Cu mixed with Sn-Pb solder alloys

Energy Technology Data Exchange (ETDEWEB)

Wang Fengjiang [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States); O' Keefe, Matthew [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States)], E-mail: mjokeefe@mst.edu; Brinkmeyer, Brandon [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States)

2009-05-27

The effect of incorporating eutectic Sn-Pb solder with Sn-3.0Ag-0.5Cu (SAC) Pb-free solder on the microstructure and tensile properties of the mixed alloys was investigated. Alloys containing 100, 75, 50, 25, 20, 15, 10, 5 and 0 wt% SAC, with the balance being Sn-37Pb eutectic solder alloy, were prepared and characterized. Optical and scanning electron microscopy were used to analyze the microstructures while 'mini-tensile' test specimens were fabricated and tested to determine mechanical properties at the mm length scale, more closely matching that of the solder joints. Microstructural analysis indicated that a Pb-rich phase formed and was uniformly distributed at the boundary between the Sn-rich grains or between the Sn-rich and the intermetallic compounds in the solder. Tensile results showed that mixing of the alloys resulted in an increase in both the yield and the ultimate tensile strength compared to the original solders, with the 50% SAC-50% Sn-Pb mixture having the highest measured strength. Initial investigations indicate the formation and distribution of a Pb-rich phase in the mixed solder alloys as the source of the strengthening mechanism.

The Effect of Reflow on Wettability of Sn 96.5 Ag 3 Cu 0.5 Solder

Directory of Open Access Journals (Sweden)

Zoltán Weltsch

2012-11-01

Full Text Available Surface conditions on Printed Circuit Board (PCB final finishes have an important impact on the wetting behaviour with lead-free solder. The improvement of wettability in liquid Sn 96.5 Ag 3 Cu 0.5 Solder alloy on PCB substrate was measured with a sessile drop method at 523 K temperature. Wetting properties was determined in normal atmospheric air and inert atmosphere. The wetting angles increasing with the number of reflows both atmosphere. The effect of the atmosphere has a huge importance of the oxidation which manifests itself of the measured wetting angles. One of the most important factors to the wetting properties is the amount of oxygen in the soldering atmosphere. Using the inert atmosphere is crucial to Pb-free solders, particularly after reflows.

Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

Directory of Open Access Journals (Sweden)

Kovaliuk T. T.

2015-12-01

Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

Sensors based on mesoporous SnO{sub 2}-CuWO{sub 4} with high selective sensitivity to H{sub 2}S at low operating temperature

Energy Technology Data Exchange (ETDEWEB)

Stanoiu, Adelina; Simion, Cristian E. [National Institute of Materials Physics, Atomistilor 405A, P.O. Box MG-7, 077125 Bucharest, Măgurele (Romania); Calderon-Moreno, Jose Maria; Osiceanu, Petre [“Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy, Surface Chemistry and Catalysis Laboratory, Spl. Independentei 202, 060021, Bucharest (Romania); Florea, Mihaela [University of Bucharest, Faculty of Chemistry, Department of Organic Chemistry, Biochemistry and Catalysis, B-dul Regina Elisabeta 4-12, Bucharest (Romania); National Institute of Materials Physics, Atomistilor 405A, P.O. Box MG-7, 077125 Bucharest, Măgurele (Romania); Teodorescu, Valentin S. [National Institute of Materials Physics, Atomistilor 405A, P.O. Box MG-7, 077125 Bucharest, Măgurele (Romania); Somacescu, Simona, E-mail: somacescu.simona@gmail.com [“Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy, Surface Chemistry and Catalysis Laboratory, Spl. Independentei 202, 060021, Bucharest (Romania)

2017-06-05

Highlights: • Mesoporous SnO{sub 2}-CuWO{sub 4} obtained by an inexpensive synthesis route. • Powders characterization performed by a variety of complementary techniques. • SnO{sub 2}-CuWO{sub 4} layers with high selective sensitivity to H{sub 2}S. • Low operating temperature and relative humidity influences. - Abstract: Development of new sensitive materials by different synthesis routes in order to emphasize the sensing properties for hazardous H{sub 2}S detection is one of a nowadays challenge in the field of gas sensors. In this study we obtained mesoporous SnO{sub 2}-CuWO{sub 4} with selective sensitivity to H{sub 2}S by an inexpensive synthesis route with low environmental pollution level, using tripropylamine (TPA) as template and polyvinylpyrrolidone (PVP) as dispersant/stabilizer. In order to bring insights about the intrinsic properties, the powders were characterized by means of a variety of complementary techniques such as: X-Ray Diffraction, XRD; Transmission Electron Microscopy, TEM; High Resolution TEM, HRTEM; Raman Spectroscopy, RS; Porosity Analysis by N{sub 2} adsorption/desorption, BET; Scanning Electron Microscopy, SEM and X-ray Photoelectron Spectroscopy, XPS. The sensors were fabricated by powders deposition via screen-printing technique onto planar commercial Al{sub 2}O{sub 3} substrates. The sensor signals towards H{sub 2}S exposure at low operating temperature (100 °C) reaches values from 10{sup 5} (for SnWCu600) to 10{sup 6} (for SnWCu800) over the full range of concentrations (5–30 ppm). The recovery processes were induced by a short temperature trigger of 500 °C. The selective sensitivity was underlined with respect to the H{sub 2}S, relative to other potential pollutants and relative humidity (10–70% RH).

Lattice parameter values and phase transitions for the Cu2Cd1-zMnzSnSe4 and Cu2Cd1-zFezSnSe4 alloys

International Nuclear Information System (INIS)

Moreno, E.; Quintero, M.; Morocoima, M.; Quintero, E.; Grima, P.; Tovar, R.; Bocaranda, P.; Delgado, G.E.; Contreras, J.E.; Mora, A.E.; Briceno, J.M.; Avila Godoy, R.; Fernandez, J.L.; Henao, J.A.; Macias, M.A.

2009-01-01

X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu 2 Cd 1-z Mn z SnSe 4 and Cu 2 Cd 1-z Fe z SnSe 4 alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. For Cu 2 Cd 0.8 Fe 0.2 SnSe 4 as well as for Cu 2 Cd 0.2 Fe 0.8 SnSe 4 the crystal structures were refined using the Rietveld method. It was found that the internal distortion parameter σ decreases as Cd is replaced by either Mn and/or Fe. For the Cu 2 Cd 1-z Mn z SnSe 4 and Cu 2 Cd 1-z Fe z SnSe 4 alloy systems, only two single solid phase fields, the tetragonal stannite α(I4-bar2m) and the wurtz-stannite δ (Pmn2 1 ) structures were found to occur in the diagram. In addition to the tetragonal stannite α phase extra X-ray diffraction lines due to MnSe and/or FeSe 2 were observed for as grown samples in the range 0.7 < z < 1.0. However, it was found that the amount of the extra phase decreased for the compressed samples.

Cu{sub 2}ZnSn(S,Se){sub 4} from Cu{sub x}SnS{sub y} nanoparticle precursors on ZnO nanorod arrays

Energy Technology Data Exchange (ETDEWEB)

Kavalakkatt, Jaison, E-mail: jai.k@web.de [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Lin, Xianzhong; Kornhuber, Kai [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kusch, Patryk [Freie Universitaet Berlin, Berlin (Germany); Ennaoui, Ahmed [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Reich, Stephanie [Freie Universitaet Berlin, Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany)

2013-05-01

Solar cells with Cu{sub 2}ZnSnS{sub 4} absorber thin films have a potential for high energy conversion efficiencies with earth-abundant and non-toxic elements. In this work the formation of CZTSSe from Cu{sub x}SnS{sub y} nanoparticles (NPs) deposited on ZnO nanorod (NR) arrays as precursors for zinc is investigated. The NPs are prepared using a chemical route and are dispersed in toluene. The ZnO NRs are grown on fluorine doped SnO{sub 2} coated glass substrates by electro deposition method. A series of samples are annealed at different temperatures between 300 °C and 550 °C in selenium containing argon atmosphere. To investigate the products of the reaction between the precursors the series is analyzed by means of X-ray diffraction (XRD) and Raman spectroscopy. The morphology is recorded by scanning electron microscopy (SEM) images of broken cross sections. The XRD measurements and the SEM images show the disappearing of ZnO NRs with increasing annealing temperature. Simultaneously the XRD and Raman measurements show the formation of CZTSSe. The formation of secondary phases and the optimum conditions for the preparation of CZTSSe is discussed. - Highlights: ► Cu{sub x}SnS{sub y} nanoparticles are deposited on ZnO nanorod arrays. ► Samples are annealed at different temperatures (300–550 °C) in Se/Ar-atmosphere. ► Raman spectroscopy, X-ray diffraction and electron microscopy are performed. ► ZnO disappears with increasing annealing temperature. ► With increasing temperature Cu{sub x}SnS{sub y} and ZnO form Cu{sub 2}ZnSn(S,Se){sub 4}.

Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

Energy Technology Data Exchange (ETDEWEB)

Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

2011-02-03

Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

Science.gov (United States)

Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

2018-03-01

Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

Effects of the copper content on the structural and electrical properties of Cu{sub 2}ZnSnSe{sub 4} bulks

Energy Technology Data Exchange (ETDEWEB)

Tsega, Moges, E-mail: mogestsega@yahoo.com [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Department of Physics, Bahir Dar University (Ethiopia); Dejene, F.B.; Koao, L.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa)

2016-01-01

We have investigated the concept of defect in Cu{sub x}ZnSnSe{sub 4} (x=1.6–2.0) and Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} (y= 1.6–2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb{sub 2}S{sub 3} and Te. All samples were found to exhibit p-type semiconductor for Cu{sub x}ZnSnSe{sub 4}, while n-type of behavior obtained at y= 1.8–2.0 for Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn{sup 4+} acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×10{sup 17} cm{sup −3} showed the highest mobility of around 58 cm{sup 2}/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

UV N{sub 2} laser ablation of a Cu-Sn-Zn-Pb alloy: Microstructure and topography studied by focused ion beam

Energy Technology Data Exchange (ETDEWEB)

Zupanic, Franc [University of Maribor, Faculty of Mechanical Engineering, University Centre for Electron Microscopy, Smetanova 17, SI-2000 Maribor (Slovenia)], E-mail: franc.zupanic@uni-mb.si; Boncina, Tonica [University of Maribor, Faculty of Mechanical Engineering, University Centre for Electron Microscopy, Smetanova 17, SI-2000 Maribor (Slovenia); Pipic, Davor; Henc-Bartolic, Visnja [University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Applied Physics, Unska 3, 10000 Zagreb (Croatia)

2008-10-06

A Cu-Sn-Zn-Pb alloy was irradiated by ultraviolet nitrogen laser pulses (N{sub 2} laser, wavelength 337 nm, pulse duration 6 ns, frequency 1 Hz, power 0.5 MW and average power density 0.67 GW/m{sup 2}). The surface topography and microstructure were mainly studied by scanning electron microscopy, and a focused ion beam. The non-homogenized spatial beam profile resulted in the activation of several ablative mechanisms, the main being phase explosion and hydrodynamic instability. They caused a crater to be formed, surrounded by a raised rim and wavelike structure in a halo. FIB cross-sectioning and imaging showed a shallow (few micrometers) molten and resolidified surface layer. Streaks were observed in the heat-affected zone beneath the molten layer, indicating partial recrystallization of initially cold-worked material.

Multifilamentar superconductor wires of Cu-Nb-Al and Cu-Nb3Sn obtained by a new method

International Nuclear Information System (INIS)

Lima, O.F. de

1985-01-01

A new method to prepare multifilamentar wires of Cu-Nb 3 Sn which is based on power metallurgy is developed. Wires of Cu+xw%Nb++2wt%Al (x =10,30) were tinned and heat treated for Sn diffusion and reaction (T = 700 0 C), leading to the Nb 3 Sn A 15 phase. Final wires showed microfilament density around 8 x 10 4 mm -2 . The superconducting properties (T sup(c), J sup(c) x H), mechanical properties (tau x epsilon) and eletrical resistivity for Cu-Nb-Al wires were as normally expected. The Cu-Nb 3 Sn wires showed high T sub(c) approx. 17.9 K, very near that for the pure A 15 phase. J sub(c) x H curves were approx. 4 times lower than typical published results for wires prepared by other methods. The experimental evidence shows that J sub(c) increases when decreases the initial Nb particle size. (Author) [pt

Solidification of Al-Sn-Cu Based Immiscible Alloys under Intense Shearing

Science.gov (United States)

Kotadia, H. R.; Doernberg, E.; Patel, J. B.; Fan, Z.; Schmid-Fetzer, R.

2009-09-01

The growing importance of Al-Sn based alloys as materials for engineering applications necessitates the development of uniform microstructures with improved performance. Guided by the recently thermodynamically assessed Al-Sn-Cu system, two model immiscible alloys, Al-45Sn-10Cu and Al-20Sn-10Cu, were selected to investigate the effects of intensive melt shearing provided by the novel melt conditioning by advanced shear technology (MCAST) unit on the uniform dispersion of the soft Sn phase in a hard Al matrix. Our experimental results have confirmed that intensive melt shearing is an effective way to achieve fine and uniform dispersion of the soft phase without macro-demixing, and that such dispersed microstructure can be further refined in alloys with precipitation of the primary Al phase prior to the demixing reaction. In addition, it was found that melt shearing at 200 rpm and 60 seconds will be adequate to produce fine and uniform dispersion of the Sn phase, and that higher shearing speed and prolonged shearing time can only achieve minor further refinement.

Morphological and humidity sensing characteristics of SnO 2 –CuO ...

Indian Academy of Sciences (India)

This paper reports the synthesis of SnO2–CuO, SnO2–Fe2O3 and SnO2–SbO2 composites of nano oxides and comparative study of humidity sensing on their electrical resistances. CuO, Fe2O3 and SbO2 were added within base material SnO2 in the ratio 1 : 0.25, 1 : 0.50 and 1 : 1. Characterizations of materials were done ...

Successive ionic layer adsorption and reaction deposited kesterite Cu{sub 2}ZnSnS{sub 4} nanoflakes counter electrodes for efficient dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Mali, Sawanta S.; Shim, Chang Su; Hong, Chang Kook, E-mail: hongck@chonnam.ac.kr

2014-11-15

Highlights: • Cu{sub 2}ZnSnS{sub 4} nanoflakes by SILAR technique. • Hydrothermal synthesis of TiO{sub 2}. • Counter electrode for DSSC application. • 4.48% conversion efficiency. - Abstract: In this investigation, we have successfully synthesized Cu{sub 2}ZnSnS{sub 4} (CZTS) nanoflakes by successive ionic layer adsorption and reaction (SILAR) method and used as a counter electrode in the hydrothermally grown TiO{sub 2} based dye sensitized solar cells (DSSCs). The prepared CZTS nanoflakes were characterized using X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and energy dispersive analysis. Our DSSCs results revealed that, compared with conventional Pt/FTO counter electrode DSSCs, nanoflakes of p-type CZTS as the photocathode and n-type TiO{sub 2} thin films as the photoanode shows an increased short circuit current (13.35 mA/cm{sup 2}) with 4.84% power conversion efficiency. The detailed interface properties of were analyzed by electrochemical impedance spectroscopy (EIS) measurements.

Wetting behaviour of lead-free Sn-based alloys on Cu and Ni substrates

International Nuclear Information System (INIS)

Amore, S.; Ricci, E.; Borzone, G.; Novakovic, R.

2008-01-01

The present work was carried out in the framework of the study of new lead-free solder alloys for technical applications in electronic devices. In the focus of this characterisation the wetting behaviour of several Sn-rich alloys belonging to the In-Sn, Au-Sn and Cu-Sn systems has been studied by measuring the contact angle variations on Cu and Ni substrates as a function of time and temperature. The interface between the alloy and the substrate has been analysed by the use of optical microscopy and scanning electron microscopy combined with energy-dispersive X-ray spectrometry in order to study the reaction between the alloy and the solid substrate and the possible formation of different compounds at the interface. A remarkable effect of the two different substrates on the behaviour of the contact angle as a function of temperature and on the morphology of the interface between the liquid solder and the solid substrate was observed for the In-Sn and Cu-Sn, while the Au-Sn system shows a very similar wetting behaviour on Cu and Ni

Layered perovskite PrBa0.5Sr0.5CoCuO5+δ as a cathode for intermediate-temperature solid oxide fuel cells

International Nuclear Information System (INIS)

Wang, Biao; Long, Guohui; Ji, Yuan; Pang, Mingjun; Meng, Xiangwei

2014-01-01

Highlights: • A single-phase layered-perovskite PrBa 0.5 Sr 0.5 CoCuO 5+δ (PBSCCu) is prepared by the EDTA–citrate complexing method. • PBSCCu cathode has a good chemical compatible with GDC electrolyte. • Partial substitution of Cu for Co can efficiently lower the thermal expansion coefficient. • Performances of PrBa 0.5 Sr 0.5 CoCuO 5+δ cathode based on Gd 0.1 Ce 0.9 O 1.95 electrolyte is reported firstly. - Abstract: Layered perovskite PrBa 0.5 Sr 0.5 CoCuO 5+δ (PBSCCo) oxide is synthesized by EDTA–citrate complexing method and investigated as a novel cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFCs). X-ray diffraction results show that PBSCCo is chemical compatible with Gd 0.1 Ce 0.9 O 1.95 (GDC) electrolyte below 950 °C. The thermal expansion coefficient of PBSCCo is 17.58 × 10 −6 K −1 between 30 °C and 900 °C. The maximum electrical conductivity of PBSCCo is 483 S cm −1 at 325 °C. The polarization resistance of PBSCCo cathode on GDC electrolyte is as low as 0.06 Ω cm 2 at 800 °C. The maximum power density of the electrolyte-supported single cell with PBSCCo cathode achieves 521 mW cm −2 at 800 °C. Preliminary results indicate that PBSCCo is a potential cathode material for application in IT-SOFCs

Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

NARCIS (Netherlands)

ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

2015-01-01

Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical

Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

International Nuclear Information System (INIS)

Zribi, M.; Rabeh, M. Ben; Brini, R.; Kanzari, M.; Rezig, B.

2006-01-01

Structural, morphological and optical properties of Sn-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 deg. C for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 deg. C. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS 2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS 2 thin films exhibit N-type conductivity after annealing

A new dental powder from nanocrystalline melt-spun Ag-Sn-Cu alloy ribbons

International Nuclear Information System (INIS)

Do-Minh, N.; Le-Thi, C.; Nguyen-Anh, S.

2003-01-01

A new non-gamma-two dental powder has been developed from nanocrystalline melt-spun Ag-Sn-Cu alloy ribbons. The amalgam made from this powder exhibits excellent properties for dental filling. The nanocrystalline microstructure was found for the first time in as-spun and heat treated Ag(27-28)Sn(9-32) Cu alloy ribbons, using X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy. As-spun ribbons exhibited a multi-phase microstructure with preferred existence of β (Ag 4 Sn) phase formed during rapid solidification (RS) due to supersaturating of copper (Cu) atoms and homogenous nanostructure with subgrain size of about (40-50) nm, which seems to be developed during RS process and can be caused by eutectic reaction of the Ag 3 Sn/Ag 4 Sn-Cu 3 Sn system. In heat treated ribbons the clustering of Cu atoms was always favored and stable in an ageing temperature and time interval determined by Cu content. The heat treatment led to essential changes of subgrain morphology, resulted in the appearance of large-angle boundaries with fine Cu 3 Sn precipitates and forming typical recrystallization twins. Such a microstructure variation in melt-spun ribbons could eventually yield enhanced technological, clinical and physical properties of the dental products, controlled by the ADA Specification N deg 1 and reported before. Thus, using the rapid solidification technique a new non-gamma-two dental material of high quality, nanocrystalline ribbon powder, can be produced. Copyright (2003) AD-TECH - International Foundation for the Advancement of Technology Ltd

X-ray diffraction pattern and morphology of superconducting Nb/sub 3/Sn layer grown on a polycrystalline Nb substrate of (111) main texture

Energy Technology Data Exchange (ETDEWEB)

Glowacki, B [Politechnika Wroclawska (Poland)

1983-01-16

A study is presented on structure and crystallographic orientation of Nb/sub 3/Sn layers formed in the process of interaction of polycrystalline Nb substrate with Cu/sub 0.2/Sn/sub 0.8/ solution at 980 /sup 0/C. Grain structure characterization of Nb/sub 3/Sn layers has been carried out with scanning electron microscopy and TV automatic image analysis. The superconducting layer is divided into a fine-grained FG and coarse-grained CG zone. The X-ray patterns of FG and CG zones did not differ from one another and were the same as in randomly oriented Nb/sub 3/Sn polycrystalline powder.

The recruitment of the U5 snRNP to nascent transcripts requires internal loop 1 of U5 snRNA.

Science.gov (United States)

Kim, Rebecca; Paschedag, Joshua; Novikova, Natalya; Bellini, Michel

2012-12-01

In this study, we take advantage of the high spatial resolution offered by the nucleus and lampbrush chromosomes of the amphibian oocyte to investigate the mechanisms that regulate the intranuclear trafficking of the U5 snRNP and its recruitment to nascent transcripts. We monitor the fate of newly assembled fluorescent U5 snRNP in Xenopus oocytes depleted of U4 and/or U6 snRNAs and demonstrate that the U4/U6.U5 tri-snRNP is not required for the association of U5 snRNP with Cajal bodies, splicing speckles, and nascent transcripts. In addition, using a mutational analysis, we show that a non-functional U5 snRNP can associate with nascent transcripts, and we further characterize internal loop structure 1 of U5 snRNA as a critical element for licensing U5 snRNP to target both nascent transcripts and splicing speckles. Collectively, our data support the model where the recruitment of snRNPs onto pre-mRNAs is independent of spliceosome assembly and suggest that U5 snRNP may promote the association of the U4/U6.U5 tri-snRNP with nascent transcripts.

Preparation of Cu{sub 2}ZnSnSe{sub 4} solar cells by low-temperature co-evaporation and following selenization

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao, E-mail: chao.gao@kit.edu; Hetterich, Michael [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Schnabel, Thomas; Abzieher, Tobias; Ahlswede, Erik [Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Powalla, Michael [Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Light Technology Institute (LTI), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)

2016-01-04

Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films are prepared by a two-step method which involves co-evaporation of Cu, Zn, Sn, and Se on molybdenum-coated soda-lime glass at low substrate temperature and a following selenization. Solar cells with efficiencies of up to 6.5% can be achieved. The influence of the selenium deposition rates during co-evaporation and the nitrogen pressure during selenization on the properties of the CZTSe films are investigated. It is found that these two parameters can significantly affect the morphology and crystallinity of the CZTSe films. The possible reasons for the experimental results are discussed.

Research Article Special Issue

African Journals Online (AJOL)

pc

2017-11-24

Nov 24, 2017 ... where K is the reaction rate of the IMC formation. 4. CONCLUSION ... of Ni and Zn-doped Sn-2.0Ag-0.5Cu lead-free solders,” Mater. Des., vol. 51, pp. 789–796, 2013. [6] ... and nano particles,” Mater. Sci. Eng. R Reports, vol.

Development of Bi-base high-temperature Pb-free solders with second-phase dispersion: Thermodynamic calculation, microstructure, and interfacial reaction

Science.gov (United States)

Takaku, Yoshikazu; Ohnuma, Ikuo; Kainuma, Ryosuke; Yamada, Yasushi; Yagi, Yuji; Nishibe, Yuji; Ishida, Kiyohito

2006-11-01

Bismuth and its alloys are candidates for Pb-free high-temperature solders that can be substituted for conventional Pb-rich Pb-Sn solders (melting point (mp) = 573 583 K). However, inferior properties such as brittleness and weak bonding strength should be improved for practical use. To that end, BiCu-X (X=Sb, Sn, and Zn) Pb-free high-temperature solders are proposed. Miscibility gaps in liquid BiCu-X alloys were surveyed using the thermodynamic database ADAMIS (alloy database for micro-solders), and compositions of the BiCu-X solders were designed on the basis of calculation. In-situ composite solders that consist of a Bi-base matrix with fine intermetallic compound (IMC) particles were produced by gas-atomizing and melt-spinning methods. The interfacial reaction between in-situ composite solders and Cu or Ni substrates was investigated. The IMCs at the interface formed a thin, uniform layer, which is an appropriate morphology for a reliable solder joint.

Design of binary SnO_2-CuO nanocomposite for efficient photocatalytic degradation of malachite green dye

International Nuclear Information System (INIS)

Kumar, Aniket; Rout, Lipeeka; Achary, L. Satish Kumar; Mohanty, Anurag; Marpally, Jyoshna; Chand, Pradyumna Kumar; Dash, Priyabrat

2016-01-01

Semiconductor mediated photocatalysis has got enormous consideration as it has shown immense potential in addressing the overall energy and environmental issues. To overcome the earlier drawbacks concerning quick charge recombination and limited visible-light absorption of semiconductor photocatalysts, numerous methods have been produced in the past couple of decades and the most broadly utilized one is to develop the photocatalytic heterojunctions. In our work, a series of SnO_2-CuO nanocomposites of different compositions were synthesized by a combustion method and have been investigated in detail by various characterization techniques, such as wide angle X-ray diffraction (XRD), UV-vis spectroscopy, transmission electron microscopy (TEM), and field emission scanning electron microscopy (FE-SEM). The results revealed that the crystal structure and optical properties of the nanocomposites were almost same for all the compositions. FE-SEM images showed that the shape of SnO_2-CuO was spherical in nature and the 1: 1 Sn/Cu sample had a well-proportioned morphology. The malachite green dye was used for the photocatalytic studies in a photoreactor and monitored with a UV-visible spectrometer for different composition ratio of metal (Sn: Cu) such as 1:1, 1:2, 2:1, 1:0.5 and 0.5:1. The 1:1 ratio nanocomposite showed excellent photocatalytic degradation of 96 % compared to pure SnO_2 and CuO. The mechanism of degradation and charge separation ability of the nanocomposite are also explored using photocurrent measurement study.

Influence of adding BaSnO3 nanoparticles on magnetic transport properties for CuTl-1223 phase

Directory of Open Access Journals (Sweden)

M.ME. Barakat

Full Text Available Co-precipitation method and solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3x/Cu0.5Tl0.5Ba2Ca2Cu3O10−δ samples, 0.00 ≤ x ≤ 1.50 wt%, respectively. All samples were characterized using X-ray powder diffraction (XRD and electrical resistivity measurements at different applied DC magnetic fields ranged from 0.29 to 4.40 kG. The relative volume fraction, superconducting transition temperature, Tc, and hole carriers concentration, P, were enhanced by increasing x up to 0.25 wt%, beyond which they were decreased for further increase in the addition of BaSnO3 nanoparticles. Both thermally activated flux creep (TAFC model and Ambegaokar and Halperin (AH theory were used to analyze the magnetoresistance data for (BaSnO3x/CuTl-1223 samples. An enhancement in the derived magnetic superconducting parameters, including the flux pinning energy, U, critical current density, Jc(0, and upper critical magnetic field, Bc2(0, as well as a decrement in the coherence length at 0 K, ξ(0, was achieved by adding BaSnO3 nanoparticles up to 0.25 wt%. A reverse trend was recorded for further addition of BaSnO3 nanoparticles. The electronic thermal conductivity, κe, was decreased by increasing applied magnetic fields below Tc. Keywords: CuTl-1223 phase, BaSnO3 nanoparticles, Flux pinning energy, Critical current density

Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays

International Nuclear Information System (INIS)

Kavalakkatt, Jaison; Lin, Xianzhong; Kornhuber, Kai; Kusch, Patryk; Ennaoui, Ahmed; Reich, Stephanie; Lux-Steiner, Martha Ch.

2013-01-01

Solar cells with Cu 2 ZnSnS 4 absorber thin films have a potential for high energy conversion efficiencies with earth-abundant and non-toxic elements. In this work the formation of CZTSSe from Cu x SnS y nanoparticles (NPs) deposited on ZnO nanorod (NR) arrays as precursors for zinc is investigated. The NPs are prepared using a chemical route and are dispersed in toluene. The ZnO NRs are grown on fluorine doped SnO 2 coated glass substrates by electro deposition method. A series of samples are annealed at different temperatures between 300 °C and 550 °C in selenium containing argon atmosphere. To investigate the products of the reaction between the precursors the series is analyzed by means of X-ray diffraction (XRD) and Raman spectroscopy. The morphology is recorded by scanning electron microscopy (SEM) images of broken cross sections. The XRD measurements and the SEM images show the disappearing of ZnO NRs with increasing annealing temperature. Simultaneously the XRD and Raman measurements show the formation of CZTSSe. The formation of secondary phases and the optimum conditions for the preparation of CZTSSe is discussed. - Highlights: ► Cu x SnS y nanoparticles are deposited on ZnO nanorod arrays. ► Samples are annealed at different temperatures (300–550 °C) in Se/Ar-atmosphere. ► Raman spectroscopy, X-ray diffraction and electron microscopy are performed. ► ZnO disappears with increasing annealing temperature. ► With increasing temperature Cu x SnS y and ZnO form Cu 2 ZnSn(S,Se) 4

Reduction of secondary phases in Cu{sub 2}SnSe{sub 3} absorbers for solar cell application

Energy Technology Data Exchange (ETDEWEB)

Tang, Zeguo, E-mail: tangzg@fc.ritsumei.ac.jp [Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, Shiga (Japan); Nukui, Yuki; Kosaka, Kiichi; Ashida, Naoki; Uegaki, Hikaru; Minemoto, Takashi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan)

2014-09-01

Highlights: • Cu{sub 2}SnSe{sub 3} thin films for absorber of solar cell are fabricated by selenization of Cu–Sn precursors. • Secondary phase of Cu{sub 2–x}Se can be suppressed via using Se and SnSe mixture powders as Se source. • Selective etching of secondary phase of Cu{sub 2–x}Se is realized by potassium cyanide solution. • Cu{sub 2–x}Se rather than SnSe makes major contribution to the high carrier concentration of CTSe films. - Abstract: The creation of secondary phases, such as Cu{sub 2−x}Se and SnSe, and their influence on electrical properties of Cu{sub 2}SnSe{sub 3} (CTSe) thin films fabricated by selenization of Cu–Sn metal precursors are investigated. The Cu{sub 2−x}Se content in CTSe films is estimated via deconvolution of grazing incidence X-ray diffraction (GIXRD) patterns, and the results suggest that the Cu{sub 2−x}Se content increases with the increasing Cu/Sn ratio in metal precursors. We also found that using Se and SnSe mixture powders as Se source is an effective approach to suppress the creation of Cu{sub 2−x}Se secondary phase. Meanwhile, selective etching of Cu{sub 2−x}Se is realized by potassium cyanide (KCN) solution. Hall measurement results reveal that the secondary phase of Cu{sub 2−x}Se rather than SnSe makes major contribution to the high carrier concentration (larger than 10{sup 18} cm{sup −3}) of CTSe films. The approach to further decrease the carrier concentration in CTSe films is discussed.

Development of Pb-Free Nanocomposite Solder Alloys

Directory of Open Access Journals (Sweden)

Animesh K. Basak

2018-04-01

Full Text Available As an alternative to conventional Pb-containing solder material, Sn–Ag–Cu (SAC based alloys are at the forefront despite limitations associated with relatively poor strength and coarsening of grains/intermetallic compounds (IMCs during aging/reflow. Accordingly, this study examines the improvement of properties of SAC alloys by incorporating nanoparticles in it. Two different types of nanoparticles were added in monolithic SAC alloy: (1 Al2O3 or (2 Fe and their effect on microstructure and thermal properties were investigated. Addition of Fe nanoparticles leads to the formation of FeSn2 IMCs alongside Ag3Sn and Cu6Sn5 from monolithic SAC alloy. Addition of Al2O3 nano-particles do not contribute to phase formation, however, remains dispersed along primary β-Sn grain boundaries and act as a grain refiner. As the addition of either Fe or Al2O3 nano-particles do not make any significant effect on thermal behavior, these reinforced nanocomposites are foreseen to provide better mechanical characteristics with respect to conventional monolithic SAC solder alloys.

Effect of alkali elements in thin-film Cu2ZnSnS4 solar cells produced by solution-processing

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

The effect of adding Li, Na, and K to Cu2ZnSnS4 nanoparticle thin-film absorber layers has been investigated. Among them, K is found to enhance grain growth as well as increase the photoluminescence of the films....

The role of molecular architecture and layer composition on the properties and performance of CuPc-C6 photovoltaic devices

International Nuclear Information System (INIS)

Schultes, S.M.; Sullivan, P.; Heutz, S.; Sanderson, B.M.; Jones, T.S.

2005-01-01

We have studied the effects of molecular architecture, co-deposition and annealing on the properties and performance of photovoltaic cells based on copper phthalocyanine (CuPc)-fullerene (C 6 ) heterojunctions. Significant improvements in performance are achieved when mixed CuPc:C 6 layers are incorporated into the device structure due to the creation of an intermolecularly mixed donor (D)-acceptor (A) blend that favours efficient exciton dissociation. We utilise the control afforded by organic molecular beam deposition to show that the mixed-layer composition plays an important role in determining device performance and correlate device efficiency to the morphological and spectroscopic properties of the organic layers. A maximum power conversion efficiency of η p = 1.17% is achieved for devices containing a mixed layer of ratio 75:25 CuPc:C 6 surrounded by thin continuous layers of pure organic material at the electrode interfaces. A structure containing a compositional gradient where the CuPc:C 6 composition is varied from purely D to purely A via three mixed layers of increasing A composition leads to a further improvements in efficiency (η p = 1.36%). Finally, we use thermal annealing to show how structural defects and morphological templating of organic thin films reduces the interfacial area for exciton separation and yields poor device performance

Strength and reliability of low temperature transient liquid phase bonded Cu-Sn-Cu interconnects

DEFF Research Database (Denmark)

Brincker, Mads; Söhl, Stefan; Eisele, Ronald

2017-01-01

As power electronic devices have tendencies to operate at higher temperatures and current densities, the demand for reliable and efficient packaging technologies are ever increasing. This paper reports the studies on application of transient liquid phase (TLP) bonding of CuSnCu systems...

Syntheses, structural variants and characterization of AInM′S4 (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds

International Nuclear Information System (INIS)

Yohannan, Jinu P.; Vidyasagar, Kanamaluru

2016-01-01

Ten AInM′S 4 (A=alkali metals, Tl; M′= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS 4 (1-β), RbInGeS 4 (2), CsInGeS 4 (3-β), TlInGeS 4 (4-β), RbInSnS 4 (8-β) and CsInSnS 4 (9) compounds with three-dimensional BaGa 2 S 4 structure and CsInGeS 4 (3-α) and TlInGeS 4 (4-α) compounds with a layered TlInSiS 4 structure have tetrahedral [InM′S 4 ] − frameworks. On the other hand, LiInSnS 4 (5) with spinel structure and NaInSnS 4 (6), KInSnS 4 (7), RbInSnS 4 (8-α) and TlInSnS 4 (10) compounds with layered structure have octahedral [InM′S 4 ] − frameworks. NaInSnS 4 (6) and KInSnS 4 (7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases. - Graphical abstract: NaInSnS 4 and KInSnS 4 compounds undergo, in aqueous medium at room temperature, facile topotactic ion-exchange with mono, di and trivalent cations. Display Omitted - Highlights: • Ten AInM′S 4 compounds with diverse structure types were synthesized. • They are wide band gap semiconductors. • NaInSnS 4 and KInSnS 4 compounds undergo facile topotactic ion-exchange at room temperature.

Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

International Nuclear Information System (INIS)

Tiwari, Devendra; Chaudhuri, Tapas K.; Ray, Arabinda; Tiwari, Krishan Dutt

2014-01-01

A process for deposition of Cu 2 ZnSnS 4 (CZTS) films using replacement of Zn 2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10 17 cm −3 and 1.4 cm 2 V −1 s −1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO 2 :In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm 2 , respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu 2 ZnSnS 4 thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm 2 S −1 V −1 • Fabrication of Graphite/Cu 2 ZnSnS 4 /CdS/ZnO/SnO 2 :In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62

Properties and Microstructures of Sn-Ag-Cu-X Lead-Free Solder Joints in Electronic Packaging

Directory of Open Access Journals (Sweden)

Lei Sun

2015-01-01

Full Text Available SnAgCu solder alloys were considered as one of the most popular lead-free solders because of its good reliability and mechanical properties. However, there are also many problems that need to be solved for the SnAgCu solders, such as high melting point and poor wettability. In order to overcome these shortcomings, and further enhance the properties of SnAgCu solders, many researchers choose to add a series of alloying elements (In, Ti, Fe, Zn, Bi, Ni, Sb, Ga, Al, and rare earth and nanoparticles to the SnAgCu solders. In this paper, the work of SnAgCu lead-free solders containing alloying elements and nanoparticles was reviewed, and the effects of alloying elements and nanoparticles on the melting temperature, wettability, mechanical properties, hardness properties, microstructures, intermetallic compounds, and whiskers were discussed.

The effect of inducing uniform Cu growth on formation of electroless Cu seed layer

International Nuclear Information System (INIS)

Lim, Taeho; Kim, Myung Jun; Park, Kyung Ju; Kim, Kwang Hwan; Choe, Seunghoe; Lee, Young-Soo; Kim, Jae Jeong

2014-01-01

The uniformity of Cu growth on Pd nanocatalysts was controlled by using organic additives in the formation of electroless Cu seed layers. Polyethylene glycol (PEG, Mw. 8000) not only reduced the deposition rate but also improved the uniformity of Cu growth on each Pd nanocatalyst during the seed layer formation. The stronger suppression effect of PEG on Cu than on Pd reduced the difference in the deposition rate between the two surfaces, resulting in the uniform deposition. Meanwhile, bis(3-sulfopropyl) disulfide degraded the uniformity by strong and nonselective suppression. The sheet resistance measurement and atomic force microscopy imaging revealed that the uniform Cu growth by PEG was more advantageous for the formation of a thin and smooth Cu seed layer than the non-uniform growth. The uniform Cu growth also had a positive influence on the subsequent Cu electrodeposition: the 60-nm-thick electrodeposited Cu film on the Cu seed layer showed low resistivity (2.70 μΩ·cm), low surface roughness (6.98 nm), and good adhesion strength. - Highlights: • Uniform Cu growth on Pd was achieved in formation of electroless Cu seed layer. • PEG addition to electroless bath improved the uniformity of Cu growth on Pd. • A thin, smooth and continuous Cu seed layer was obtained with PEG. • Adhesion strength of the Cu seed layer was also improved with PEG. • The uniformity improvement positively affected subsequent Cu electrodeposition