Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

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Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Electrodeposited Cu2ZnSnS4 thin films

CSIR Research Space (South Africa)

Valdes, M

2014-05-01

Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

Science.gov (United States)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

Investigation of Cu2ZnSnS4 nanoparticles for thin-film solar cell applications

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Agersted, Karsten; Crovetto, Andrea

2017-01-01

We study the effect of the annealing atmosphere on grain growth of ligand-free and ligand-coated Cu2ZnSnS4 (CZTS) nanoparticle-based thin films by thermal analysis. We use thermogravimetric analysis (TGA) coupled with mass spectrometry (MS) to simultaneously monitor mass changes and evolved gases...... of both nanoparticle powders and inks. The investigation focuses on annealing in air, nitrogen and forming gas (5% H2 in Ar), i.e., oxidizing, inert, and reducing atmospheres. We find that the oleylamine capping ligands thermally decompose into smaller organic fragments starting below its boiling point......, with a slightly higher decomposition rate in reducing atmosphere. With nanoparticle inks, very modest grain growth is observed, with no differences between the atmospheres. Conversely, with nanoparticle powders, micron-sized grains appear all over for the ligand-free sample and some micron-sized grains are seen...

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Effects of Cu content on the photoelectrochemistry of Cu2ZnSnS4 nanocrystal thin films

International Nuclear Information System (INIS)

Khoshmashrab, Saghar; Turnbull, Matthew J.; Vaccarello, Daniel; Nie, Yuting; Martin, Spencer; Love, David A.; Lau, Po K.; Sun, Xuhui; Ding, Zhifeng

2015-01-01

Highlights: • Two compositions of CZTS were synthesized, one yielding Cu-poor and the other Cu-stoichiometric nanocrystals (NCs). • Physical and electronic properties of both films were probed using various analytical techniques. • Films comprised of Cu-poor CZTS showed tighter packing with less defects compared to those of stoichiometric-Cu. • Photoelectrochemical measurements exhibited increased photoconversion and increased photostability of the Cu-poor films. • Intensity modulated photocurrent spectroscopy showed that the Cu-deficient NCs had half the recombination rate as that of stoichiometric-Cu films. - Abstract: Cu 2 ZnSnS 4 (CZTS) nanocrystals (NCs) were prepared via a one-pot solvothermal method. Given that the composition affects the electronic properties of this p-type semiconductor, two compositional ratios were chosen from 10 designed and synthesized analogues, one yielding Cu-poor and the other Cu-stoichiometric CZTS. NCs in which the Cu concentration was slightly below stoichiometric yielded more uniform films with greater photovoltaic performance. The lower Cu content also lead to slightly better crystallinity within the film, as demonstrated by XRD, Raman spectroscopy and transmission electron microscopy. Chronophotoelectrochemical measurements indicated that both types of NC films displayed good stability; however, with a decrease in potential, an increase in resistance for the Cu-stoichiometric film was observed. As determined by intensity modulated photocurrent spectroscopy, the product separation rate of the photoinduced holes and electrons in the Cu-poor films were more than 3 times that of the Cu-stoichiometric, confirming that the lower Cu content led to an improved photoperformance

Optical and electrical properties study of sol-gel derived Cu2ZnSnS4 thin films for solar cells

Directory of Open Access Journals (Sweden)

B. L. Guo

2014-09-01

Full Text Available The fabrication of environmental-friendly Cu2ZnSnS4 (CZTS thin films with pure kesterite phase is always a challenge to researchers in the field of solar cells. We introduce a simple non-vacuum sol-gel method to fabricate kesterite CZTS films. Ethylenediamine is used as the chelating agent and stabilizer and plays an important role in preparing stable precursor. X-ray diffraction, Raman and scanning electron microscopy studies suggest that the microstructure and optical properties of CZTS films depend strongly on annealing temperatures. The temperature dependence of conductivity of 500 °C annealed CZTS film shows that the Mott law dominates in the low temperature region and thermionic emission is predominant at high temperatures.

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Effect of UV irradiation on Cu2ZnSnS4 thin films prepared by the sol–gel sulfurization method

International Nuclear Information System (INIS)

Miyazawa, Hayato; Tanaka, Kunihiko; Uchiki, Hisao

2015-01-01

Cu 2 ZnSnS 4 (CZTS) thin films were fabricated on Mo-coated soda lime glass substrates by the sol–gel sulfurization method, which is a non-vacuum process. UV irradiation was introduced to the drying process, resulting in a significant increase in the grain size and density as well as a remarkable improvement in the crystallinity of the CZTS films. In addition, sulfurization of the Mo substrate was suppressed due to the increased density. We confirmed that the carbon/metal ratio in the precursor increased as a result of the UV irradiation. - Graphical abstract: Surface and cross sectional SEM images of the (a) CZTS prepared without UV irradiation and (b) CZTS prepared with UV irradiation. - Highlights: • CZTS thin film was prepared by sol–gel sulfurization method. • UV irradiation was introduced during the drying process. • Density and crystallinity of the CZTS films were improved by the UV irradiation. • Sulfurization of Mo substrates was suppressed by the UV irradiation.

Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition

Science.gov (United States)

Tsai, Hung-Wei; Chen, Chia-Wei; Thomas, Stuart R.; Hsu, Cheng-Hung; Tsai, Wen-Chi; Chen, Yu-Ze; Wang, Yi-Chung; Wang, Zhiming M.; Hong, Hwen-Fen; Chueh, Yu-Lun

2016-01-01

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~104 cm−1). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59%, respectively. PMID:26902556

Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Crovetto, Andrea; Cazzaniga, Andrea; Ettlinger, Rebecca B.; Schou, Jørgen; Hansen, Ole

2015-01-01

Cu 2 ZnSnS 4 films prepared by pulsed laser deposition at different temperatures are characterized by spectroscopic ellipsometry. The focus is on confirming results from direct measurement techniques, by finding appropriate models of the surface overlayer for data fitting, and extracting the dielectric function of the films. It is found that the surface overlayer changes with film thickness and deposition temperature. Adopting different ellipsometry measurements and modeling strategies for each film, dielectric functions are extracted and compared. As the deposition temperature is increased, the dielectric functions exhibit additional critical points related to optical transitions in the material other than absorption across the fundamental band gap. In the case of a thin film < 200 nm thick, surface features observed by scanning electron microscopy and atomic force microscopy are accurately reproduced by ellipsometry data fitting. - Highlights: • Inhomogeneous Cu 2 ZnSnS 4 films are prepared by pulsed laser deposition. • The film surface includes secondary phases and topographic structures. • We model a film surface layer that fits ellipsometry data. • Ellipsometry data fits confirm results from direct measurement techniques. • We obtain the dielectric function of inhomogeneous Cu 2 ZnSnS 4 films

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

Science.gov (United States)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

Spray-coated Cu2ZnSnS4 thin films for large-scale photovoltaic applications

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Murthy, Swathi; Mariño, Simón López

2017-01-01

The kesterite material, Cu2ZnSnS4 (CZTS), has in the preceding ten years been investigated and developed as a new Earth-abundant material for solar cells. The interest in this inorganic semiconductor originates in its optimal energy band gap of approx. 1.5 eV, high absorption coefficient...... that alkali metal chloride salts can also be dissolved in controllable amounts, which we have found enhances grain growth in the films during the subsequent annealing step. A Sono-tek spray-coating system with ultrasonic atomization is used. We investigate the effect of ink concentration, and spray...

Evaluation of Cu2ZnSnS4 Absorber Films Sputtered from a Single, Quaternary Target

OpenAIRE

Carlhamn Rasmussen, Liv

2013-01-01

Cu2ZnSnS4 (CZTS) is a promising absorber material for thin-film solar cells since it contains no rare or toxic elements, has a high absorption coefficient and a near ideal bandgap energy. It does, however, present some challenges due to the limited single-phase region of the desired kesterite phase and its instability towards decomposition. Sputtering of CZTS from quaternary, compound targets using RF magnetron sputtering is known. In this thesis work CZTS absorbers were made using pulsed DC ...

Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

CERN Document Server

Kodigala, Subba Ramaiah

2013-01-01

The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

Two step growth mechanism of Cu2ZnSnS4 thin films

Science.gov (United States)

Thota, Narayana; Venkata Subbaiah, Y. P.; Prathap, P.; Reddy, Y. B. K.; Hema Chandra, G.

2014-09-01

Cu2ZnSnS4 (CZTS) semiconductor is rapidly emerging as the best absorber layer for next generation solar photovoltaics. Its cost effectiveness, environment-friendly nature, wide presence of chemical constituents in nature and high absorption coefficient with suitable energy band gap for effective utilization of solar spectrum makes it a viable alternative. The present work summarizes the preparation of CZTS films through a two-step process consisting of co-sputtered metallic precursors on glass substrates kept at 230 °C followed by sulfurization for 2 h in the ambience of elemental sulfur vapor at different temperatures ranging from 300 to 550 °C. The X-ray diffraction (XRD) and Raman analysis make it explicit that the sulfurization temperature has significant impact on reaction mechanism resulting in various bi-metallic, mono and binary metal sulfides. The diffraction pattern noticed at 500 °C corresponding to (112), (220) and (312) planes confirms the single phase CZTS as evidenced by weak and strong Raman modes at 285, 337 and 352 cm-1. The transmittance and reflectance measurements of optimized CZTS films revealed that the films have an energy band gap of ~1.56 eV. The optimized films were characterized by scanning electron microscopy (SEM) attached with EDS to know the morphological features and elemental quantification. The single phase CZTS films have exhibited p-type conductivity with sheet resistance ~6.8×103 Ω/sq., carrier concentration ~9.1×1017 cm-3 and hole mobility ~16.6 cm2V-1 s-1.

Effect of Annealing Temperature on Structural, Optical, and Electrical Properties of Sol-Gel Spin-Coating-Derived Cu2ZnSnS4 Thin Films

Science.gov (United States)

Hosseinpour, Rabie; Izadifard, Morteza; Ghazi, Mohammad Ebrahim; Bahramian, Bahram

2018-02-01

The effect of annealing temperature on structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films grown on a glass substrate by spin coating sol-gel technique has been studied. Structural study showed that all samples had kesterite crystalline structure. Scanning electron microscopy images showed that the crystalline quality of the samples was improved by heat treatment. Optical study showed that the energy gap values for the samples ranged from 1.55 eV to 1.78 eV. Moreover, good optical conductivity values (1012 S-1 to 1014 S-1) were obtained for the samples. Investigation of the electrical properties of the CZTS thin films showed that the carrier concentration increased significantly with the annealing temperature. The photoelectrical behavior of the samples revealed that the photocurrent under light illumination increased significantly. Overall, the results show that the CZTS thin films annealed at 500°C had better structural, optical, and electrical properties and that such CZTS thin films are desirable for use as absorber layers in solar cells. The photovoltaic properties of the CZTS layer annealed at 500°C were also investigated and the associated figure of merit calculated. The results showed that the fabricated ZnS-CZTS heterojunction exhibited good rectifying behavior but rather low fill factor.

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

Science.gov (United States)

Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

2011-01-01

We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application

International Nuclear Information System (INIS)

Tablero, C.

2012-01-01

The optoelectronic properties of Cu 2 ZnSnS 4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host. - Highlights: ► Cu 2 ZnSnS 4 is a promising material for low cost thin film solar cell technology. ► Its optoelectronic properties could be improved by states in the band gap. ► The oxygen to give rise to deep traps. ► Maximum efficiency can be larger than the host semiconductor.

Cu2ZnSnS4 solar cells fabricated by short-term sulfurization of sputtered Sn/Zn/Cu precursors under an H2S atmosphere

International Nuclear Information System (INIS)

Emrani, Amin; Rajbhandari, Pravakar P.; Dhakal, Tara P.; Westgate, Charles R.

2015-01-01

Synthesis of Cu 2 ZnSnS 4 (CZTS) thin films by short-term sulfurization of sputtered Sn/Zn/Cu precursors under ambient H 2 S is studied. The effect of the sulfurization processes on the film morphology, surface roughness, composition of the CZTS, and the crystallinity was investigated by using scanning electron microscopy, optical profiler, energy dispersive spectroscopy, and X-ray diffraction respectively. To further explore the CZTS layer, the following additional layers were deposited to complete the solar cells: CdS with chemical bath deposition; ZnO and Al 2 O 3 -doped ZnO with RF magnetron deposition; and, silver fingers as the front contact as the last layer. The optical and morphological properties of the CZTS films were investigated and compared. Subsequently, the electrical characteristics and the efficiencies of the regarding solar cells were analyzed. A maximum efficiency of 3.8% has been obtained for the fast sulfurization (30 min at 580 °C) and finally, the performance is compared with our best cell fabricated through the more common slow annealing. - Highlights: • Development of Cu 2 ZnSnS 4 (CZTS) solar cells using elemental metal sputtering • 112-oriented CZTS films with well-defined morphology obtained • Reported efficiency of 3.8% for a short-term annealing (less than 30 min) under ambient H 2 S • A detailed comparison between the fast and the more common slow annealing is reported

Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

Science.gov (United States)

Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

2018-03-01

Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

A simple structure of Cu2ZnSnS4/CdS solar cells prepared by sputtering

Science.gov (United States)

Li, Zhishan; Wang, Shurong; Ma, Xun; Yang, Min; Jiang, Zhi; Liu, Tao; Lu, Yilei; Liu, Sijia

2017-12-01

In this work, Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by annealing of sputtered ZnS/Sn/CuS precursors at 580 ℃ for 15 min. As a try, the CZTS solar cells were fabricated using simple structure of Mo-coated SLG/CZTS/CdS/Al and traditional structure of Mo-coated SLG/CZTS/CdS/i-ZnO/In2O3:SnO2 (ITO)/Al, respectively. The results show that the CZTS device with simple structure can achieve same level of the open circuit voltage (Voc) compared with that of traditional structure. In addition, the power conversion efficiency of 2.95% and 3.59% were obtained with simple structure and traditional structure, respectively. The CZTS solar cell with simple structure provides a promising way and an easy process to prepare high-performance CZTS thin film solar cells which is available to large-scale industrial production in the future.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

Science.gov (United States)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Successive ionic layer adsorption and reaction deposited kesterite Cu2ZnSnS4 nanoflakes counter electrodes for efficient dye-sensitized solar cells

International Nuclear Information System (INIS)

Mali, Sawanta S.; Shim, Chang Su; Hong, Chang Kook

2014-01-01

Highlights: • Cu 2 ZnSnS 4 nanoflakes by SILAR technique. • Hydrothermal synthesis of TiO 2 . • Counter electrode for DSSC application. • 4.48% conversion efficiency. - Abstract: In this investigation, we have successfully synthesized Cu 2 ZnSnS 4 (CZTS) nanoflakes by successive ionic layer adsorption and reaction (SILAR) method and used as a counter electrode in the hydrothermally grown TiO 2 based dye sensitized solar cells (DSSCs). The prepared CZTS nanoflakes were characterized using X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and energy dispersive analysis. Our DSSCs results revealed that, compared with conventional Pt/FTO counter electrode DSSCs, nanoflakes of p-type CZTS as the photocathode and n-type TiO 2 thin films as the photoanode shows an increased short circuit current (13.35 mA/cm 2 ) with 4.84% power conversion efficiency. The detailed interface properties of were analyzed by electrochemical impedance spectroscopy (EIS) measurements

Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

DEFF Research Database (Denmark)

Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

2017-01-01

We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

Influence of sintering temperature on screen printed Cu2ZnSnS4 (CZTS) films

International Nuclear Information System (INIS)

Wang Yu; Huang Yanhua; Lee, Alex Y.S.; Wang Chiou Fu; Gong Hao

2012-01-01

Highlights: ► The influences of sintering temperature on structure and properties of screen printed Cu 2 ZnSnS 4 (CZTS) were investigated. ► It was found that the direct optical band gap increased with increasing the sintering temperature. ► The screen printed CZTS film after sintering at 450 °C had a high photosensitivity (G i − G d )/G d of 14%. ► The hexagonal CuS phase aggregated after sintering at 500 °C and higher temperature. - Abstract: Screen printing is a useful and simple method for coating layers of several solar materials, but care must be taken in preparing stoichiometric CZTS film due to its instability at a high processing temperature and a small chemical potential domain. This paper reports screen printing prepared CZTS films and the influence of sintering temperature on CZTS properties. The thermostability, structural, electronic and optical properties are studied. The direct optical band gap energies of the films vary from 1.39 to 1.60 eV, while the resistivities change from 830 to 6 Ω cm after sintering at different temperatures up to 550 °C. A high photosensitivity of 14% is achieved for the sample sintered at 450 °C. The phenomena observed are also discussed.

Depth distribution of secondary phases in kesterite Cu2ZnSnS4 by angle-resolved X-ray absorption spectroscopy

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J. Just

2017-12-01

Full Text Available The depth distribution of secondary phases in the solar cell absorber material Cu2ZnSnS4 (CZTS is quantitatively investigated using X-ray Absorption Near Edge Structure (XANES analysis at the K-edge of sulfur at varying incidence angles. Varying information depths from several nanometers up to the full thickness is achieved. A quantitative profile of the phase distribution is obtained by a self-consistent fit of a multilayer model to the XANES spectra for different angles. Single step co-evaporated CZTS thin-films are found to exhibit zinc and copper sulfide secondary phases preferentially at the front or back interfaces of the film.

Novel development of nanocrystalline kesterite Cu2ZnSnS4 thin film with high photocatalytic activity under visible light illumination

Science.gov (United States)

Apostolopoulou, Andigoni; Mahajan, Sandip; Sharma, Ramphal; Stathatos, Elias

2018-01-01

Cu2ZnSnS4 (CZTS) represents a promising p-type direct band gap semiconductor with large absorption coefficient in the visible region of solar light. In the present study, a kesterite CZTS nanocrystalline film, with high purity, was successfully synthesized via the combination of successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) technique. The morphology and structural properties of the CZTS films were characterized by FE-SEM microscopy, porosimetry in terms of Brunauer-Emmett-Teller (BET) technique, X-ray diffraction and Raman spectroscopy. The as-prepared films under mild heat treatment at 250 °C in the presence of sulfur atmosphere exhibited fine nanostructure with 35 nm average particle size, high specific surface area of 53 m2/g and 9 nm pore diameter. The photocatalytic activity of the films was examined to the degradation of Basic Blue 41 (BB-41) and Acid Orange 8 (AO-8) organic azo dyes under visible light irradiation, demonstrating 97.5% and 70% discoloration for BB-41 and AO-8 respectively. Reusability of the CZTS films was also tested proving good stability over several repetitions. The reduction of photocatalyst's efficiency after three successive repetitions didn't exceed 5.6% and 8.5% for BB-41 and AO-8 respectively.

Multiwavelength excitation Raman scattering of Cu2ZnSn(SxSe1−x)4 (0 ≤ x ≤ 1) polycrystalline thin films: Vibrational properties of sulfoselenide solid solutions

International Nuclear Information System (INIS)

Dimitrievska, Mirjana; Xie, Haibing; Fairbrother, Andrew; Fontané, Xavier; Saucedo, Edgardo; Izquierdo-Roca, Victor; Gurieva, Galina; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain))" data-affiliation=" (Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain))" >Pérez-Rodríguez, Alejandro; Schorr, Susan

2014-01-01

In this work, Raman spectroscopy and X-ray diffraction were applied together to evaluate the crystal structure and the phonon modes of photovoltaic grade Cu 2 ZnSn(S x Se 1−x ) 4 thin films, leading to a complete characterization of their structural and vibrational properties. Vibrational characterization has been based on Raman scattering measurements performed with different excitation wavelengths and polarization configurations. Analysis of the experimental spectra has permitted identification of 19 peaks, which positions are in good accord with theoretical predictions. Besides, the observation of Cu 2 ZnSnS 4 -like A symmetry peaks related to S vibrations and Cu 2 ZnSnSe 4 -like A symmetry peaks related to Se vibrations, additional Raman peaks, characteristic of the solid solution and previously not reported, are observed, and are attributed to vibrations involving both S and Se anions.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

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Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Electrical and impedance spectroscopy analysis of sol-gel derived spin coated Cu2ZnSnS4 solar cell

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Gupta, Goutam Kumar; Garg, Ashish; Dixit, Ambesh

2018-01-01

We carried out electrical and impedance studies on solution derived Al:ZnO/ZnO/CdS/Cu2ZnSnS4/Mo/Glass multilayered solar cell structures to understand their impact on photovoltaic performance. The Cu2ZnSnS4 layer is synthesized on a molybdenum (Mo) coated soda lime glass substrate as an absorber and characterized intensively to optimize the absorber physical properties. The optimized Cu2ZnSnS4 is p-type with 5.8 × 1017 cm-3 hole carrier concentration. The depletion width of the junction is around 20.5 nm and the diffusion capacitance is ˜35.5 nF for these devices. We observed relatively large minority carrier life time ˜23 μs for these structures using open voltage decay analysis. The measured Cu2ZnSnS4/MoS2 and Cu2ZnSnS4/CdS interface resistances are 7.6 kΩ and 12.5 kΩ, respectively. The spatial inhomogeneities are considered and the corresponding resistance is ˜11.4 kΩ. The impedance measurements suggest that in conjunction with series resistance ˜350 Ω, the interface and spatial inhomogeneity resistances also give a significant contribution to the photovoltaic performance.

The influence of the precursor compositional ratio on Cu2ZnSnS4 films prepared by using sulfurization of the metallic precursor

Science.gov (United States)

Amal, Muhamad I.; Kim, Kyoo Ho

2013-12-01

Cu2ZnSnS4 (CZTS) films were prepared by using the sulfurization of sputtered metallic precursors. The compositional ratio of the CZTS films was slightly different compared to their initial metallic precursors due to elemental loss during annealing. The Cu/(Zn+Sn) ratio for the CZTS-1, CZTS-2 and CZTS-3 films were 0.91, 1.06 and 1.21, respectively. In addition, all films had a compositional ratio of Zn/Sn >1. The grain sizes of the CZTS films increased with increasing Cu ratio. X-ray diffraction and Raman spectroscopy showed that the CZTS films with an excess of copper and zinc had secondary phases of Cu2SnS3 and ZnS. The optical band gap and absorption coefficient for all CZTS films in the range of the experimental compositions were calculated to be 1.5 eV and >104 cm-1, respectively. The presence of secondary phases related to compositional ratio in the CZTS films influenced the electrical properties. The CZTS-1 film with a Cu-poor and Zn-rich composition whose a carrier concentration, an electrical mobility, and a resistivity values were 2.29 × 1018 cm-3, 10.29 cm2 V-1 s-1, 3.16 Ω cm, is the most suitable for solar-cell applications.

Self-assembled 3D-hierarchical structure Cu2ZnSnS4 photocathodes by tuning anion ratios in precursor solution

International Nuclear Information System (INIS)

Wen, Xin; Shao, Hansen; Fu, Gao; Zhou, Yong; Zou, Zhigang; Luo, Wenjun; Guan, Zhongjie

2016-01-01

Cu 2 ZnSnS 4 (CZTS) is one of the most promising light capture materials for solar cells or solar fuels. Construction of 3D hierarchical structure is very important for efficient optoelectronic devices. It is challenging to directly fabricate 3D hierarchical structure CZTS film by a facile solution method. Herein, we present a one-step sol–gel method for fabrication of CZTS thin films with 3D hierarchical structures. For the first time, it is found that the morphologies of thin films can be adjusted between dense, porous and 3D hierarchical structures by tuning anion ratios of Cl − /Ac − in precursor solution. Further analysis suggests the formation of intermediate phases of SnO 2 nanoparticles and SnS 2 nanosheets by tuning ratios of Cl − /Ac − in precursor solution, which has important effects on the formation of different nanostructures of CZTS. This study can deepen understanding of anion’ effect on morphologies of samples using a solution method and forms a reference to prepare novel nanostructures of other materials. (paper)

Electrodeposition mechanism of quaternary compounds Cu2ZnSnS4: Effect of the additives

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Liu, Jingjun; Ji, Jing; Song, Ye

2018-01-01

The electrodeposition mechanism of pure phase Cu2ZnSnS4 (CZTS) thin film with subsequent annealing was investigated in detail. An electrolyte design principle of quaternary compounds was proposed. The complex ions of Cu(H2C6H5O7)+, Cu2(C6H5O7)+, Zn(C4H5O6)+, Sn(H2C6H5O7)+ and Sn2(C6H5O7)+, which influenced the reduction process and played important roles in co-deposition, were identified by UV spectra. Electrochemical studies indicated that trisodium citrate and tartaric acid could narrow the co-deposition potential range of the four elements to -0.8 V to -1.2 V (vs. SCE). The cause was the synergetic effect that trisodium citrate inhibited the reduction of Cu2+ and Sn2+ and tartaric acid promoted the reduction of Zn2+. The reduction of S2O32- was mainly attributed to the induction effect of the metallic ions, and the H+ dissociated from tartaric acid could also promote the cathode process of S2O32-. The reaction mechanism could be summarized as the following steps: (I) Cu(H2C6H5O7)+, Cu2(C6H5O7)+ → Cu, Sn(H2C6H5O7)+, Sn2(C6H5O7)+ → Sn, Zn(C4H5O6)+ → Zn; (II) the desorption of (H2C6H5O7)- and (C6H5O7)-, and the reduction of S2O32- induced by metallic ions and H+. The mechanism studies provided a path of electrolyte design for multicomponent compounds.

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

Science.gov (United States)

Levcenko, S.; Hajdeu-Chicarosh, E.; Garcia-Llamas, E.; Caballero, R.; Serna, R.; Bodnar, I. V.; Victorov, I. A.; Guc, M.; Merino, J. M.; Pérez-Rodriguez, A.; Arushanov, E.; León, M.

2018-04-01

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.

Growth and characterization of Cu2ZnSnS4 nanostructures using anodized aluminum as the growth mask

Science.gov (United States)

Chan, C. P.; Chen, Z.; Lam, H.; Surya, C.

2009-08-01

In this paper we report the growth and characterization of Cu2ZnSnS4 (CZTS) nanostructures by co-electrodeposition technique using CuCl2, SnCl2 and ZnCl2 as sources and choline-based ionic liquid (IL) as the electrolyte. X-ray diffraction analysis of CZTS thin films grown by this technique indicated that the films have a kesterite structure with preferred grain orientation along (112). It is found that the energy bandgap of the material is about 1.49eV and the optical absorption coefficient is in the order of 104cm-1. Anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanostructures. Anodization of the aluminum foil was carried out in phosphoric acid solution at 1°C and a potential of 40 to 100V was applied. Sulfurization of the rods was performed in elemental sulfur vapor at 450°C for four hours using N2 as the ambient gas. Experimental results show that nanotubes were formed using the technique and the diameter can be well controlled by varying the applied potential in the anodization process. Electron diffraction experiments show that a mixture of single- and poly-crystalline nanostructures was found.

Influence of complexing agent (Na2EDTA on chemical bath deposited Cu4SnS4 thin films

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Anuar Kassim

2010-08-01

Full Text Available The quality of thin film is influenced by the presence of complexing agents such as Na2EDTA. The Cu4SnS4 thin films were deposited onto indium tin oxide glass substrate by chemical bath deposition method. The structural, morphological and optical properties of the deposited films have been studied using X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer, respectively. The XRD data showed that the films have a polycrystalline and orthorhombic structure. It also indicated that the most intense peak at 2 θ = 30.2° which belongs to (221 plane of Cu4 SnS4. The film deposited with 0.05 M Na2 EDTA showed good uniformity, good surface coverage with bigger grains and produced higher absorbance value. The band gap energy varies with the variation of Na2EDTA concentration which ranging from 1.56-1.60 eV. Deposition at concentration of 0.05 M Na2EDTA proved to offer a reasonably good Cu4SnS4 thin film.

Electrophoretic deposition of Cu2ZnSn(S0.5Se0.5)4 films using solvothermal synthesized nanoparticles

Science.gov (United States)

Badkoobehhezaveh, Amir Masoud; Abdizadeh, Hossein; Golobostanfard, Mohammad Reza

2018-01-01

In this paper, a simple, practical, and fast solvothermal route is presented for synthesizing the Cu2ZnSn(S0.5Se0.5)4 nanoparticles (CZTSSe). In this method, the precursors were dissolved in triethylenetetramine and placed in an autoclave at 240 °C for 1 h under controlled pressure and constant stirring. After washing the samples for several times with absolute ethanol, the obtained CZTSSe nanoparticles were successfully deposited on fluorine doped tin oxide substrates by convenient electrophoretic deposition (EPD) using colloidal nanoparticles. The most appropriate parameters for EPD of pre-synthesized CZTSSe nanoparticles which result in proper surface properties, controlled thickness, and high film quality are investigated by adjusting applied voltage, pH, and deposition time. X-ray diffraction pattern and Raman spectroscopy of the pre-synthesized nanoparticles show kesterite structure formation. The particle size of the CZTSSe nanoparticles is in the range of 100 to 400 nm and for some agglomerates, it is about 2 µm confirmed by scanning electron microscope. The deposited film with optimized parameter has acceptable quality without any crack in it with the thickness of about 4-5 µm. Energy-dispersive X-ray spectroscopy confirms that the chemical composition of the samples is in near stoichiometric Cu-poor and Zn-rich region, which guarantees the p-type character of the film. The diffuse reflectance spectroscopy also demonstrates that the optical band gap of the sample is about 1.2 eV.

TiO2 and Cu/TiO2 Thin Films Prepared by SPT

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S. S. Roy

2015-12-01

Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

The single-crystal multinary compound Cu2ZnSnS4 as an environmentally friendly high-performance thermoelectric material

Science.gov (United States)

Nagaoka, Akira; Masuda, Taizo; Yasui, Shintaro; Taniyama, Tomoyasu; Nose, Yoshitaro

2018-05-01

We investigated the thermoelectric properties of high-quality p-type Cu2ZnSnS4 single crystals. This material showed two advantages: low thermal conductivity because of lattice scattering caused by the easily formed Cu/Zn disordered structure, and high conductivity because of high doping from changes to the composition. All samples showed a thermal conductivity of 3.0 W m‑1 K‑1 at 300 K, and the Cu-poor sample showed a conductivity of 7.5 S/cm at 300 K because of the high density of shallow-acceptor Cu vacancies. The figure of merit of the Cu-poor Cu2ZnSnS4 reached 0.2 at 400 K, which is 1.4–45 times higher than those of related compounds.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr_2Se_4 thin films

International Nuclear Information System (INIS)

Esters, Marco; Liebig, Andreas; Ditto, Jeffrey J.; Falmbigl, Matthias; Albrecht, Manfred; Johnson, David C.

2016-01-01

We report the low temperature synthesis of highly textured CuCr_2Se_4 thin films using the modulated elemental reactant (MER) method. The structure of CuCr_2Se_4 is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr_2Se_4. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr_2Se_4 synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10"6 erg cm"−"3; shape anisotropy: 1.07 × 10"6 erg cm"−"3), with the easy axis lying out of plane, and a larger magnetic moment (6 μ_B/f.u.) than bulk CuCr_2Se_4. - Highlights: • Crystallographically aligned, phase pure CuCr_2Se_4 were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the direction. • The magnetization is larger than bulk CuCr_2Se_4 or other CuCr_2Se_4 films made to date.

Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

2013-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

Synthesis of Cu2O from CuO thin films: Optical and electrical properties

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Dhanya S. Murali

2015-04-01

Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

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Hongtao Cui

2015-01-01

Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

Kesterite Cu2ZnSnS4 compounds via electrospinning: A facile route to mesoporous fibers and dense films

International Nuclear Information System (INIS)

Mu, Chunhong; Song, Yuanqiang; Wang, Xiaoning; Wu, Peng

2015-01-01

Highlights: • CZTS fibers, mesporous films and dense films are fabricated via electrospinning. • Controllable micromorphologies can be obtained. • Band gap decrease from 1.49 eV to 1.44 eV with the morphology changing. - Abstract: Kesterite Cu 2 ZnSnS 4 (CZTS) layers composed of either mesoporous fibers or dense films were successfully synthesized by electrospinning following sulfurization at high temperature. CZTS layers were characterized using scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), Raman and X-ray photoelectronic spectroscopy (XPS), and X-ray diffraction (XRD). The optical properties were also recorded by UV–vis absorption spectroscopy. The results showed that, with the increasing of sulfurization temperature from 450 to 600 °C, the electrospun precursor fibers evolved from isolated CZTS fibers to interconnected fibers, and finally forming a compact films composing of sub-micro crystal flakes, just by simply adjusting the solutes concentration and sulfurization parameters. All the synthesized CZTS samples had a single phase, good crystallinity and a stoichiometric composition. Moreover, the band gap evolved from 1.49 eV to 1.44 eV with the morphology changing from porous microfibers to compact films. This work puts forward a facile route to both CZTS fibers and dense films, and would be meaningful for exploiting CZTS-based solar cells

Preparation of Cu2ZnSnS4 nano-crystalline powder by mechano-chemical method

Science.gov (United States)

Alirezazadeh, Farzaneh; Sheibani, Saeed; Rashchi, Fereshteh

2018-01-01

Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is one of the most promising ceramic materials as an absorber layer in solar cells due to its suitable band gap, high absorption coefficient and non-toxic and environmental friendly constituent elements. In this work, nano-crystalline CZTS powder was synthesized by mechanical milling. Elemental powders of Cu, Zn, Sn and were mixed in atomic ratio of 2:1:1:4 according to the stoichiometry of Cu2ZnSnS4 and then milled in a planetary high energy ball mill under argon atmosphere. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and diffusion reflectance spectroscopy (DRS). XRD results confirm the formation of single-phase CZTS with kesterite structure after 20 h of milling. Also, the mean crystallite size was about 35 nm. SEM results show that after 20 h of milling, the product has a relatively uniform particle size distribution. Optical properties of the product indicate that the band gap of prepared CZTS is 1.6 eV which is near to the optimum value for photovoltaic solar cells showing as a light absorber material in solar energy applications.

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

International Nuclear Information System (INIS)

Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

2011-01-01

In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr{sub 2}Se{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Esters, Marco [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Liebig, Andreas [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Ditto, Jeffrey J.; Falmbigl, Matthias [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Albrecht, Manfred [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Johnson, David C., E-mail: davej@uoregon.edu [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States)

2016-06-25

We report the low temperature synthesis of highly textured CuCr{sub 2}Se{sub 4} thin films using the modulated elemental reactant (MER) method. The structure of CuCr{sub 2}Se{sub 4} is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr{sub 2}Se{sub 4}. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the <111> axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr{sub 2}Se{sub 4} synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10{sup 6} erg cm{sup −3}; shape anisotropy: 1.07 × 10{sup 6} erg cm{sup −3}), with the easy axis lying out of plane, and a larger magnetic moment (6 μ{sub B}/f.u.) than bulk CuCr{sub 2}Se{sub 4}. - Highlights: • Crystallographically aligned, phase pure CuCr{sub 2}Se{sub 4} were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the <111> direction. • The magnetization is larger than bulk CuCr{sub 2}Se{sub 4} or other CuCr{sub 2}Se{sub 4} films made to date.

The effect of ZnS segregation on Zn-rich CZTS thin film solar cells

International Nuclear Information System (INIS)

Li, Wei; Chen, Jian; Yan, Chang; Hao, Xiaojing

2015-01-01

Highlights: • Secondary phase segregation in CZTS based solar cells has been studied by TEM. • A “Zn layer exchange” behaviour was found in sulphurisation of Zn/SnCu stacked layers. • XAS reveals a large spike-like CBO (>0.86 eV) between CZTS and ZnS. • Larger ZnS secondary phase proportion increases solar cell’s V oc but limits J sc . - Abstract: Analysis of ZnS segregation behaviour and its influence on the device performance has been made on the Zn-rich Cu 2 ZnSnS 4 thin film solar cells. Cross-sectional transmission electron microscopy images reveal that ZnS is the main secondary phase in the Cu 2 ZnSnS 4 layer obtained from a sulphurised Zn/CuSn metallic stack. The excess Zn diffuses from back contact region to top surface of Cu 2 ZnSnS 4 layer accumulating in the form of ZnS. The solar cell with a higher Zn concentration shows a large quantity of isolated ZnS grains at Cu 2 ZnSnS 4 top surface which is close to CdS/Cu 2 ZnSnS 4 heterojunction interface. Soft X-ray absorption spectroscopy indicates a large spike-like conduction band offset between Cu 2 ZnSnS 4 and ZnS. Consequently, such much ZnS precipitates would increase series resistance and generate lower short-circuit current and external quantum efficiency. However, appropriate amount of ZnS at the space charge region of the solar cell has beneficial effects by reducing the heterojunction interface recombination. Therefore, an improved open-circuit voltage and a higher shunt resistance are achieved. This paper provides a possible method to intentionally segregate ZnS at the space charge region by depositing the Zn layer at the bottom of co-sputtered CuSn layer. Although it is difficult to synthesis a pure phase Cu 2 ZnSnS 4 absorber, we can utilise the ZnS secondary phase to improve the Cu 2 ZnSnS 4 solar performance by controlling the Zn-excess amount

CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

Science.gov (United States)

Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

2018-06-01

CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

International Nuclear Information System (INIS)

Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

2006-01-01

Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

Cu2ZnSnS4 Nanoparticle Absorber Layers for Thin-Film Solar Cells

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin

or a precursor ink that can be printed, sprayed, or in another way coated on a substrate appropriate for mass production. For CZTS, the power conversion effciency of these device are lagging behind the vacuum processed CZTS thin films, as certain challenges arise with solution-processing. The conversion...... of the as-deposited amorphous or nanocrystalline thin films into an almost "monocrystalline" material is not effective under the current sulfurization conditions. In this work, means have been taken to improve the properties of the nanoparticles in order to make them easier to handle and better...

In-situ XRD study of alloyed Cu2ZnSnSe4-CuInSe2 thin films for solar cells

International Nuclear Information System (INIS)

Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland

2015-01-01

We investigate the growth of Cu 2 ZnSnSe 4 -CuInSe 2 (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu 2 ZnSnSe 4 -CuInSe 2 alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells

Copper Antimony Chalcogenide Thin Film PV Device Development

Energy Technology Data Exchange (ETDEWEB)

Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

2015-06-14

Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

Energy Technology Data Exchange (ETDEWEB)

Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

2015-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

CuInS{sub 2} thin films obtained through the annealing of chemically deposited In{sub 2}S{sub 3}-CuS thin films

Energy Technology Data Exchange (ETDEWEB)

Pena, Y., E-mail: yolapm@gmail.com [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Lugo, S. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco S/N, Col Centro, 62580, Temixco, Morelos (Mexico); Vazquez, A.; Gomez, I.; Elizondo, P. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico)

2011-01-01

In this work, we report the formation of CuInS{sub 2} thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In{sub 2}S{sub 3}) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS{sub 2} (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10{sup -8} to 3 {Omega}{sup -1} cm{sup -1} depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

Energy Technology Data Exchange (ETDEWEB)

Caballero, R., E-mail: raquel.caballero@uam.es [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Izquierdo-Roca, V. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Merino, J.M.; Friedrich, E.J. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Climent-Font, A. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); CMAM, Universidad Autónoma de Madrid, C/Faraday 3, E-28049, Madrid (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Pérez-Rodríguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain); León, M. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain)

2013-05-01

A study of Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu{sub 2}ZnSnS{sub 4} bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu{sub 2}ZnSnS{sub 4} deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells.

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Semiconductor thin films directly from minerals—study of structural, optical, and transport characteristics of Cu2O thin films from malachite mineral and synthetic CuO

International Nuclear Information System (INIS)

Balasubramaniam, K.R.; Kao, V.M.; Ravichandran, J.; Rossen, P.B.; Siemons, W.; Ager, J.W.

2012-01-01

We demonstrate the proof-of-concept of using an abundantly occurring natural ore, malachite (Cu 2 CO 3 (OH) 2 ) to directly yield the semiconductor Cu 2 O to be used as an active component of a functional thin film based device. Cu 2 O is an archetype hole-conducting semiconductor that possesses several interesting characteristics particularly useful for solar cell applications, including low cost, non-toxicity, good hole mobility, large minority carrier diffusion length, and a direct energy gap ideal for efficient absorption. In this article, we compare the structural, optical, and electrical transport characteristics of Cu 2 O thin films grown from the natural mineral malachite and synthetic CuO targets. Growth from either source material results in single-phase, fully epitaxial cuprous oxide thin films as determined by x-ray diffraction. The films grown from malachite have strong absorption coefficients ( 10 4 cm −1 ), a direct allowed optical bandgap ( 2.4 eV), and majority carrier hole mobilities ( 35 cm 2 V −1 s −1 at room temperature) that compare well with films grown from the synthetic target as well as with previously reported values. Our work demonstrates that minerals could be useful to directly yield the active components in functional devices and suggests a route for the exploration of low cost energy conversion and storage technologies. - Highlights: ► Semiconductor thin films directly from minerals ► Chemistry and structure evolution of the films obtained from mineral target is very similar to that films obtained from high-purity synthetic targets. ► Quite interestingly, transport and optical characteristics are also found to be similar.

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu{sub 2}ZnSnS{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Yu, Ruei-Sung, E-mail: rsyu@asia.edu.tw [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China); Department of Medical Research, China Medical University Hospital, China Medical University, Taichung 40402, Taiwan (China); Hung, Ta-Chun [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China)

2016-02-28

Highlights: • Oxygen incorporation in Cu{sub 2}ZnSnS{sub 4} changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10{sup 4} to 10{sup 5} cm{sup −1}. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu{sub 2}ZnSnS{sub 4} thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu{sub 2}ZnSnS{sub 4} films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu{sub 2}ZnSnS{sub 4} film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu{sub 2}ZnSnS{sub 4} changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10{sup 4} cm{sup −1} to 10{sup 5} cm{sup −1}. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu{sub 2}ZnSnS{sub 4} thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

2013-11-01

Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

Chemical solution deposition of CaCu3Ti4O12 thin film

Indian Academy of Sciences (India)

Administrator

CaCu3Ti4O12; thin film; chemical solution deposition; dielectric properties. 1. Introduction. The CaCu3Ti4O12. (CCTO) compound has recently attracted considerable ... and Kelvin probe force microscopy (Chung et al 2004). Intrinsic .... SEM images of CCTO thin films as a function of sintering temperature. silicon based ...

Laser deposition rates of thin films of selected metals and alloys

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

Thin films of Cu, Zn and Sn as well as mixtures of these elements have been produced by Pulsed Laser Deposition (PLD). The deposition rate of single and multicomponent metallic targets was determined. The strength of PLD is that the stoichiometry of complex compounds, even of complicated alloys...... or metal oxides, can be preserved from target to film. We apply this technique to design films of a mixture of Cu, Zn and Sn, which are constituents of the chalcogenide CZTS, which has a composition close to Cu2ZnSnS4. This compound is expected to be an important candidate for absorbers in new solar cells...... for alloys of the different elements as well as compounds with S will be presented....

Compositional ratio effect on the surface characteristics of CuZn thin films

Science.gov (United States)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

A facile arrested precipitation method for synthesis of pure wurtzite Cu2ZnSnS4 nanocrystals using thiourea as a sulfur source

International Nuclear Information System (INIS)

Li, Chunya; Ha, Enna; Wong, Wing-Leung; Li, Cuiling; Ho, Kam-Piu; Wong, Kwok-Yin

2012-01-01

Graphical abstract: High-resolution TEM image of wurtzite Cu 2 ZnSnS 4 nanocrystals. Highlights: ► Wurtzite Cu 2 ZnSnS 4 nanocrystals were synthesized by arrested precipitation method. ► XRD, EDX, TEM demonstrate that the CZTS nanocrystals are purely wurtzite structure. ► The average diameter of the bulk CZTS products is found to be 10 ± 1.1 nm. ► The estimated direct bandgap energy is 1.56 eV for wurtzite CZTS nanocrystals. ► The electrical resistivity of the wurtzite CZTS nanocrystals is low. -- Abstract: A facile route for the synthesis of wurtzite Cu 2 ZnSnS 4 (CZTS) nanocrystals was developed by an arrested precipitation method at 240 °C under simple reaction conditions with diethanolamine as the solvent and thiourea as sulfur source. The structure and morphology of the CZTS nanocrystals were characterized by X-ray diffraction and transmission electron microscopy. Control experiments demonstrated that CZTS nanocrystals which are purely wurtzite structure are readily obtained. The average diameter of the bulk CZTS products is found to be 10 ± 1.1 nm. The estimated direct bandgap energy is 1.56 eV, which indicates that the CZTS nanocrystals produced by this method possess promising applications in photovoltaic devices.

Influences of annealing temperature on sprayed CuFeO2 thin films

Science.gov (United States)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

Science.gov (United States)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Room temperature chemical synthesis of Cu(OH)2 thin films for supercapacitor application

International Nuclear Information System (INIS)

Gurav, K.V.; Patil, U.M.; Shin, S.W.; Agawane, G.L.; Suryawanshi, M.P.; Pawar, S.M.; Patil, P.S.; Lokhande, C.D.; Kim, J.H.

2013-01-01

Highlights: •Cu(OH) 2 is presented as the new supercapacitive material. •The novel room temperature method used for the synthesis of Cu(OH) 2 . •The hydrous, nanograined Cu(OH) 2 shows higher specific capacitance of 120 F/g. -- Abstract: Room temperature soft chemical synthesis route is used to grow nanograined copper hydroxide [Cu(OH) 2 ] thin films on glass and stainless steel substrates. The structural, morphological, optical and wettability properties of Cu(OH) 2 thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV–vis spectrophotometer and water contact angle measurement techniques. The results showed that, room temperature chemical synthesis route allows to form the nanograined and hydrophilic Cu(OH) 2 thin films with optical band gap energy of 3.0 eV. The electrochemical properties of Cu(OH) 2 thin films are studied in an aqueous 1 M NaOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with 120 F/g specific capacitance

XRD total scattering of the CZTS nanoparticle absorber layer for the thin film solar cells

DEFF Research Database (Denmark)

Symonowicz, Joanna; Jensen, Kirsten M. Ø.; Engberg, Sara Lena Josefin

Cu2ZnSnS4 (CZTS) thin film solar cells are cheap, non-toxic and present an efficiency up to 9,2% [1]. They can be easily manufactured by the deposition of the nanoparticle ink as a thin film followed by a thermal treatment to obtain large grains [2]. Therefore, CZTS has the potential...... to revolutionize the solar energy market. However, to commercialize CZTS nanoparticle thin films, the efficiency issues must yet be resolved. In order to do so, it is vital to understand in detail their nanoscale atomic structure. CZTS crystallize in the kesterite structure, where Cu and Zn is distributed between......-ray Diffraction data with X-ray total scattering with Pair Distribution Function analysis. Powder neutron diffraction will furthermore allow characterization of the cation disorder on the metal sites in the kesterite structure. The nanoparticle ink is also characterized by XRD, EDS, and Raman spectroscopy...

Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

2017-01-01

In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

Investigation of optimum annealing parameters for formation of dip coated Cu{sub 2}ZnSnS{sub 4} thin film

Energy Technology Data Exchange (ETDEWEB)

Chaudhari, Sushmita; Kannan, P.K.; Dey, Suhash R., E-mail: suhash@iith.ac.in

2016-08-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is most attractive absorber material for inorganic solar cell applications because of its cost effective and ecofriendly nature. To obtain phase pure CZTS film, effects of annealing parameters on synthesis of CZTS thin film are investigated. CZTS films are deposited through dip coating method followed by heat treatment to form crystalline CZTS thin films. Factors influencing the crystallinity, morphology and composition of the films such as annealing temperature, time, rate and atmosphere are studied through X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy and Energy Dispersive X-Ray Spectroscopy. After numerous experiments of synthesis of CZTS in different annealing conditions and its characterization, it is observed that 1.4 eV band gap CZTS thin film of kesterite structure is obtained by annealing the film in nitrogen atmosphere for 60 min at 300 °C with 10 °C/min ramping rate. - Highlights: • Dip coated Cu{sub 2}ZnSnS{sub 4} film is developed using non-hydrazine based precursor solution. • Optimum annealing condition to achieve best crystalline film is studied. • Optimal condition is 300 °C in N{sub 2} atmosphere for 60 min at 10 °C/min ramping rate. • Bandgap of prepared films is 1.4 eV, suitable for solar cell applications.

Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

Energy Technology Data Exchange (ETDEWEB)

Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2015-02-15

Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

The investigation on electrochemical reaction mechanism of CuF2 thin film with lithium

International Nuclear Information System (INIS)

Cui Yanhua; Xue Mingzhe; Zhou Yongning; Peng Shuming; Wang Xiaolin; Fu Zhengwen

2011-01-01

Crystalline CuF 2 thin films were prepared by pulsed laser deposition under room temperature. The physical and electrochemical properties of the as-deposited thin films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), galvanostatic cycling and cyclic voltammetry (CV). Reversible capacity of 544 mAh g -1 was achieved in the potential range of 1.0-4.0 V. A reversible couple of redox peaks at 3.0 V and 3.7 V was firstly observed. By using ex situ XRD and TEM techniques, an insertion process followed by a fully conversion reaction to Cu and LiF was revealed in the lithium electrochemical reaction of CuF 2 thin film electrode. The reversible insertion reaction above 2.8 V could provide a capacity of about 125 mAh g -1 , which makes CuF 2 a potential cathode material for rechargeable lithium batteries.

Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

International Nuclear Information System (INIS)

Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

2001-01-01

Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2013-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Udai P. Singh

2010-01-01

Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

NARCIS (Netherlands)

ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

2015-01-01

Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical

Room temperature chemical synthesis of Cu(OH){sub 2} thin films for supercapacitor application

Energy Technology Data Exchange (ETDEWEB)

Gurav, K.V. [Thin Film Photonic and Electronics Lab, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Patil, U.M. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 007 (M.S.) (India); Shin, S.W.; Agawane, G.L.; Suryawanshi, M.P.; Pawar, S.M.; Patil, P.S. [Thin Film Photonic and Electronics Lab, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 007 (M.S.) (India); Kim, J.H., E-mail: jinhyeok@chonnam.ac.kr [Thin Film Photonic and Electronics Lab, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of)

2013-10-05

Highlights: •Cu(OH){sub 2} is presented as the new supercapacitive material. •The novel room temperature method used for the synthesis of Cu(OH){sub 2}. •The hydrous, nanograined Cu(OH){sub 2} shows higher specific capacitance of 120 F/g. -- Abstract: Room temperature soft chemical synthesis route is used to grow nanograined copper hydroxide [Cu(OH){sub 2}] thin films on glass and stainless steel substrates. The structural, morphological, optical and wettability properties of Cu(OH){sub 2} thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV–vis spectrophotometer and water contact angle measurement techniques. The results showed that, room temperature chemical synthesis route allows to form the nanograined and hydrophilic Cu(OH){sub 2} thin films with optical band gap energy of 3.0 eV. The electrochemical properties of Cu(OH){sub 2} thin films are studied in an aqueous 1 M NaOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with 120 F/g specific capacitance.

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

Science.gov (United States)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Synthesis of single phase of CuTl-1234 thin films

CERN Document Server

Khan, N A; Ishida, K; Tateai, F; Kojima, T; Terada, N; Ihara, H

1999-01-01

Thin films of CuTl-1234 superconductor have been prepared for the first time using an amorphous phase epitaxy method (APE). In this method, an amorphous phase is sputtered from a target of stoichiometric composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub x/. Thin films on the SrTiO/sub 3/ substrate after the thallium treatment are biaxially oriented. The XRD reflected a predominant single phase with c-axis 18.7 AA and pole figure measurements of (103) reflections showed a-axis oriented films with Delta phi =0.8 degrees . Resistivity measurements showed T/sub c/=113 K and preliminary J/sub c/ measurements manifested a current density of 1.0*10/sup 6/ A/cm (77 K, 0 T). The composition of films after EDX measurements is Cu /sub 0.3/Tl/sub 0.7/CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. (8 refs).

Micro-Raman spectroscopy studies of bulk and thin films of CuInTe2

International Nuclear Information System (INIS)

Ananthan, M R; Mohanty, Bhaskar Chandra; Kasiviswanathan, S

2009-01-01

Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser–sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power

Structural, optical and electrical properties of Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films prepared by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Khadka, Dhruba B.; Kim, JunHo, E-mail: jhk@inu.ac.kr

2015-07-25

Highlights: • CFTS(Se) thin films have been synthesized by low-cost spray-based deposition. • The fabricated films were found to be of stannite structure and p-type conductivity. • Band gaps of CFTS and CFTSe thin films are 1.37 and 1.11 eV, respectively. - Abstract: We report on fabrication of polycrystalline Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing of as-sprayed Cu{sub 2}FeSnS{sub 4} (CFTS) films in sulfur and selenium ambient demonstrated drastically improved surface texture as well as crystallinity. The crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed films were found to be consistent with stannite structure. The fabricated Cu{sub 2}FeSnS{sub 4} (CFTS) and Cu{sub 2}FeSnSe{sub 4} (CFTSe) films showed p-type conductivity with carrier concentration in the range of 10{sup 21} cm{sup −3} and mobility ∼1–5 cm{sup 2} V{sup −1} s{sup −1}. The band gap energies of post-sulfurized CFTS and post-selenized CFTSe films were estimated to be ∼1.37 eV and ∼1.11 eV with an error of ±0.02 eV by UV–Vis absorption, respectively, which are promising for photovoltaic application.

Composition-dependent nanostructure of Cu(In,Ga)Se{sub 2} powders and thin films

Energy Technology Data Exchange (ETDEWEB)

Schnohr, C.S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Kämmer, H.; Steinbach, T.; Gnauck, M. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, T.; Kaufmann, C.A.; Stephan, C. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Schorr, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

2015-05-01

Atomic-scale structural parameters of Cu(In,Ga)Se{sub 2} powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. - Highlights: • Cu(In,Ga)Se{sub 2} powders and thin films are studied with X-ray absorption spectroscopy. • Structural parameters are determined as a function of the In and Cu contents. • The element-specific average bond lengths are identical for powders and thin films. • The Ga-Se/In-Se bond length variation is smaller for thin films than for powders. • The differences are believed to stem from the different history of the Cu content.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

Science.gov (United States)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

First-principles study of defect formation in a photovoltaic semiconductor Cu2ZnGeSe4

Science.gov (United States)

Nishihara, Hironori; Maeda, Tsuyoshi; Wada, Takahiro

2018-02-01

The formation energies of neutral Cu, Zn, Ge, and Se vacancies in kesterite-type Cu2ZnGeSe4 were evaluated by first-principles pseudopotential calculations using plane-wave basis functions. The calculations were performed at typical points in Cu-(Zn1/2Ge1/2)-Se and Cu3Se2-ZnSe-GeSe2 pseudoternary phase diagrams for Cu2ZnGeSe4. The results were compared with those for Cu2ZnSnSe4, Cu2ZnGeS4, and Cu2ZnSnS4 calculated using the same version of the CASTEP program code. The results indicate that Cu vacancies are easily formed in Cu2ZnGeSe4 under the Cu-poor condition as in the above compounds and CuInSe2, suggesting that Cu2ZnGeSe4 is also a preferable p-type absorber material for thin-film solar cells. The formation energies of possible antisite defects, such as CuZn and CuGe, and of possible complex defects, such as CuZn+ZnCu, were also calculated and compared within the above materials. The antisite defect of CuZn, which has the smallest formation energy within the possible defects, is concluded to be the most hardly formed in Cu2ZnGeSe4 among the compounds.

Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

International Nuclear Information System (INIS)

Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

2006-01-01

Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

SURFACE MODIFICATION OF SEMICONDUCTOR THIN FILM OF TiO2 ON GRAPHITE SUBSTRATE BY Cu-ELECTRODEPOSITION

Directory of Open Access Journals (Sweden)

Fitria Rahmawati

2010-06-01

Full Text Available Surface modification of graphite/TiO2 has been done by mean of Cu electrodeposition. This research aims to study the effect of Cu electrodeposition on photocatalytic enhancing of TiO2. Electrodeposition has been done using CuSO4 0,4 M as the electrolyte at controlled current. The XRD pattern of modified TiO2 thin film on graphite substrate exhibited new peaks at 2θ= 43-44o and 2θ= 50-51o that have been identified as Cu with crystal cubic system, face-centered crystal lattice and crystallite size of 26-30 nm. CTABr still remains in the material as impurities. Meanwhile, based on morphological analysis, Cu particles are dissipated in the pore of thin film. Graphite/TiO2/Cu has higher photoconversion efficiency than graphite/TiO2.   Keywords: semiconductor, graphite/TiO2, Cu electrodeposition

Electrochemical growth and studies of CuInSe2 thin films

International Nuclear Information System (INIS)

Prasher, Dixit; Chandel, Tarun; Rajaram, Poolla

2014-01-01

Thin films of CuInSe 2 were grown on fluorine doped tin oxide (<10 Ω/□) coated glass using the electrodeposition technique. The electrodeposition was carried out potentiostatically using an aqueous bath consisting of solutions of CuCl 2 , InCl 3 and SeO 2 with ethylenediamine-dihydrochloride (EDC) added for complexation. CuInSe 2 films were also deposited without using any complexing agent in the bath. To improve the crystallinity the CuInSe 2 films were annealed in vaccum at 300 °C for one hour. The annealed films were analyzed by x-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive analysis of x-rays (EDAX), atomic force microscopy (AFM) and optical spectra. The results obtained in this work show that by adding a suitable complexing agent to the electrochemical bath, nanocrystalline CuInSe 2 , 20 nm to 30 nm in size, can be grown. The composition of the CuInSe 2 films can be controlled by means of the bath composition and stoichiometric films can be obtained for a bath with ionic Cu:In:Se composition close to 1:4:2. AFM micrographs show that the particles are generally oval shaped for near stoichiometric compositions. However for extreme copper rich layers, the morphology is completely different, the particles in this case appearing in the form of nanoflakes. Each flake has a thickness in the nano range, but the surface extends to a length of several microns. (papers)

Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2009-08-01

Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

Science.gov (United States)

Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

2018-03-01

We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells

Directory of Open Access Journals (Sweden)

Kai Yang

2012-01-01

Full Text Available A new multinary semiconductor Cu2ZnSnS4−O (CZTSO, which does not contain toxic elements and expensive rare metals, was fabricated by the electrochemical deposition (ECD method. CZTSO thin films were deposited onto indium tin oxide (ITO- coated glass substrates by DC and two-step pulsed ECD from aqueous solutions containing CuSO4, ZnSO4, SnSO4, and Na2S2O3. The films deposited by pulsed ECD contained smaller amount of oxygen than those deposited by DC ECD. The films had band gap energies in a range from 1.5 eV and 2.1 eV. By a photoelectrochemical measurement, it was confirmed that CZTSO films showed p-type conduction and photosensitivity. CZTSO/ZnO heterojunctions exhibited rectification properties in a current-voltage measurement.

Structural and electrical properties of CZTS thin films by electrodeposition

Science.gov (United States)

Rao, M. C.; Basha, Sk. Shahenoor

2018-06-01

CZTS (Cu2ZnSnS4) thin films were coated on ITO glass substrates by single bath electrodeposition technique. The prepared films were subsequently characterized by XRD, SEM, FTIR, UV-visible spectroscopy and Raman studies. The thickness of the thin films was measured by wedge method. X-ray diffraction studies revealed the formation of polycrystalline phase. The morphological surface of the prepared thin films was examined by SEM and AFM and showed the presence of microcrystals on the surface of the samples. The elemental analysis and their compositional ratios present in the samples were confirmed by the energy dispersive X-ray analysis. Functional groups and the position of band structure involved in the materials were confirmed by FTIR. Optical absorption studies were performed on the prepared thin films in the wavelength ranging from 300 to 1000 nm and the energy bandgap values were found to be in the range from 1.39 to 1.60 eV. Raman spectral peak which was observed at 360 cm-1 correspond to kesterite phase, was formed due to the vibration of the molecules. Electrical measurements confirmed the nature of the thin film depending on the charge concentration present in the samples.

Superconducting thin films of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Hudner, J.

1993-01-01

Thin films of the high temperature superconductor YBa 2 Cu 3 O 7-x (YBCO) are of significance in fundamental studies of oxide superconductors and for prospected electronic applications based on superconductors operating at liquid nitrogen temperatures (T= 77 K). Synthesis of YBCO thin films is complex and a large part of this thesis has been devoted to the elaboration of various techniques in forming YBCO thin films. A general observation was that synthesis of YBCO films exhibiting high zero-resistivity temperatures temperatures (T c ) ≥ 88 K and elevated critical current densities (J c ) ≥ 10 6 A/cm 2 at 77 K was possible under widely different conditions of film growth. For the BaF 2 -based method, various substrate materials were investigated. Among perovskite related substrates with low losses in the high frequency regime, LaA10 3 was found to yield YBCO films exhibiting the highest quality electrical properties. A study of YBCO film interaction with sapphire substrates was performed. It was suggested that the YBCO film on sapphire consists of weakly coupled superconducting grains. Compositional effects of Y, BA and Cu for MOCVD-YBCO films were examined with respect to morphology, structure, resistivity, as susceptibility and J c (T). High T c :s and J c :s were observed for an anomalous large compositional range of Cu in off-compositional YBCO films. This was shown to be related to the formation of Cu-rich precipitates embedded within a c-Axis oriented stoichiometric YBCO film matrix. Thermal critical current behavior at zero field in thin films of YBCO fabricated by various methods has been studied by three techniques: transport measurements on patterned microbridges, dc magnetization hysteresis loops using the Bean model and non-linear ac susceptibility analysis. Absolute critical current values obtained form the two former techniques when measured on the same YBCO film were observed to differ about a factor of two. The feasibility of non-linear ac

Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

2015-11-01

Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

Nanocrystalline Cu{sub 2}ZnSnSe{sub 4} thin films for solar cells application: Microdiffraction and structural characterization

Energy Technology Data Exchange (ETDEWEB)

Quiroz, Heiddy P., E-mail: hpquirozg@unal.edu.co; Dussan, A., E-mail: adussanc@unal.edu.co [Departmento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá 11001 (Colombia)

2016-08-07

This work presents a study of the structural characterization of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films by X-ray diffraction (XRD) and microdiffraction measurements. Samples were deposited varying both mass (M{sub X}) and substrate temperature (T{sub S}) at which the Cu and ZnSe composites were evaporated. CZTSe samples were deposited by co-evaporation method in three stages. From XRD measurements, it was possible to establish, with increased Ts, the presence of binary phases associated with the quaternary composite during the material's growth process. A stannite-type structure in Cu{sub 2}ZnSnSe{sub 4} thin films and sizes of the crystallites varying between 30 and 40 nm were obtained. X-ray microdiffraction was used to investigate interface orientations and strain distributions when deposition parameters were varied. It was found that around the main peak, 2ϴ = 27.1°, the Cu{sub 1.8}Se and ZnSe binary phases predominate, which are formed during the subsequent material selenization stage. A Raman spectroscopy study revealed Raman shifts associated with the binary composites observed via XRD.

Deposition of CuIn(Se,S)2 thin films by sulfurization of selenized Cu/In alloys

International Nuclear Information System (INIS)

Sheppard, C.J.; Alberts, V.; Bekker, W.J.

2004-01-01

The relatively small band gap values (close to 1eV) of CuInSe 2 thin films limits the conversion efficiencies of completed CuInSe 2 /CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H 2 Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe 2 structures. These films were subsequently exposed to a H 2 S/Ar atmosphere to produce monophasic CuIn(Se, S) 2 quaternary alloys. The homogeneous incorporation of S into CuInSe 2 led to a systematic shift in the lattice parameters and band gap of the ab- sorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se,S) 2 thin films with an optimum band gap values between 1.15 and 1.2 eV. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Science.gov (United States)

Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

2014-01-08

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

Science.gov (United States)

Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

2018-02-01

In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

Science.gov (United States)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

International Nuclear Information System (INIS)

Kassim, Anuar; Wee Tee, Tan; Soon Min, Ho.; Nagalingam, Saravanan

2010-01-01

Cu 4 SnS 4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions. (author).

Magnetic and structural study of Cu-doped TiO2 thin films

International Nuclear Information System (INIS)

Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

2007-01-01

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

2009-05-15

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Fabrication and sulfurization of Cu{sub 2}SnS{sub 3} thin films with tuning the concentration of Cu-Sn-S precursor ink

Energy Technology Data Exchange (ETDEWEB)

Wang, Chi-Jie [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shih-Chang [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China)

2016-12-01

Highlights: • Tuning the relative reaction rate of component phases proved to be beneficial in controlling the reaction process. • Low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology. • Optical band-gap energy measured at 1.346 eV suitable for thin-film solar cell applications. - Abstract: In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu{sub 2}S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu{sub 4}SnS{sub 4}. Following sulfurization, single phase Cu{sub 2}SnS{sub 3} (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu{sub 2}S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu{sub 2}S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu{sub 2}S and Cu{sub 4}SnS{sub 4}. Raman spectra revealed that second phase Cu{sub 2}S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole

Josephson effectss in bicrystalline Bi2Sr2CaCu2O8+δ thin films

International Nuclear Information System (INIS)

Amrein, T.

1994-08-01

A pulsed laser deposition process is developed for preparing high quality thin films of Bi 2 Sr 2 CaCu 2 O x on different substrates. Both microstructural and electrical properties of the superconducting films are well characterized, e.g. by SEM, TEM and AFM. The high reproducability of the thin film quality facilitated a detailed study of Josephson effects in bicrystalline grain boundary junctions (GBJs). Thin films are deposited on commercially available (001) SrTiO 3 bicrystalls and patterned by standard photolithography using wet-etching or Ar + -ion milling. The width of the micobridges ranges from 2 to 111 μm. The critical current densities across grain boundaries of thin film bicrystals have been measured as a function of the tilt angle Θ. For Θ=0 to 45 , the ratio of the grain boundary critical current density to the bulk critical current density decreases exponentially with increasing tilt angle. Microstructure investigations show a rough grain boundary of the superconductor (roughness 100 nm-1 μm) which is not determined by the roughness of the substrate grain boundary (1-3 nm) but by the island-plus-layer growth of the twin domains. The electrical properties are well described by the resistively shunted junction (RSJ) model. The I c R n -product reaches values of 2.2 mV at 4.2 K and 60 μV at 77 K. An optimized design for dc SQUIDs (Θ=24 ) is developed relating to the results of single GBJs. The values of the transfer function (∂V/∂Φ) run up to 74 μV/Φ o . The equivalent flux noise which is measured in a flux-locked loop mode amounts 4.5 to 25 μPhi o Hz in the white noise region for Φ≥25-50 Hz and 13 to 150 μΦ o Hz at 1 Hz. In conclusion, microstructural as well as electrical properties of bicrystalline Bi 2 Sr 2 CaCu 2 O x and YBa 2 Cu 3 O y GBJs are more or less equal. (orig.)

Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

Science.gov (United States)

Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

2011-10-01

We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

Science.gov (United States)

Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

2018-05-01

In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

Precipitates in YBa2Cu3O7-δ thin films annealed at low oxygen partial pressure

International Nuclear Information System (INIS)

Hou, S.Y.; Phillips, J.M.; Werder, D.J.; Tiefel, T.H.; Fleming, R.M.; Marshall, J.H.; Siegal, M.P.

1993-01-01

We have studied the precipitates in YBa 2 Cu 3 O 7-δ (YBCO) thin films grown by the BaF 2 process in p O 2 =4 Torr and 700 degree C. While stoichiometric films result in BaCuO 2 surface precipitates, we have found Y 2 Cu 2 O 5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y 2 Cu 2 O 5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00

Microstructure and opto-electric properties of Cu/ITO thin films

International Nuclear Information System (INIS)

Wang Xian; Li Junlei; Shi Shiwei; Song Xueping; Cui Jingbiao; Sun Zhaoqi

2012-01-01

Highlights: ► We prepared Cu/ITO films with different Cu layer thickness. ► We analyzed the relation between opto-electric properties and roughness of the films. ► The Cu-16.1 nm/ITO film shows excellent optical and electric properties. ► Cu/ITO films have great application prospects in new-type transflective displays. - Abstract: Cu/ITO thin films were deposited on glass and silicon substrates by DC and RF magnetron sputtering at room temperature. X-ray diffraction results showed that the films were amorphous. Both of SEM images and 3D Profilometer images indicated that the surface morphology of the ITO films had been affected by the Cu layer. The optical and electric properties of the Cu/ITO films changed significantly with the variation of Cu layer thickness. Cu-5.4 nm/ITO film exhibited the highest optical transmittance of 62.9% at 550 nm and the lowest sheet resistance of 96 Ω/□, whereas Cu-16.1 nm/ITO film showed the highest average reflectance of 24.0% and the lowest resistance of 27.4 Ω/□. Based on our analysis, it was evaluated that Cu layer had an important effect on the electrical and optical properties of ITO thin films.

Structural, microstructural and optical properties of Cu2ZnSnS4 thin ...

Indian Academy of Sciences (India)

2017-08-05

Aug 5, 2017 ... From optical absorption studies, the direct optical band gap of CZTS films is found to be ∼1.45 eV. ... CZTS thin films; thermal evaporation; annealing; Raman spectroscopy; .... determination of composition data is ±5 at%.

Preparation of biaxially oriented TlCu-1234 thin films

CERN Document Server

Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

1999-01-01

The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

An Investigation of Structural and Electrical Properties of Nano Crystalline SnO2:Cu Thin Films Deposited by Spray Pyrolysis

Directory of Open Access Journals (Sweden)

J. Podder

2011-11-01

Full Text Available Pure tin oxide (SnO2 and Cu doped SnO2 thin films have been deposited onto glass substrates by a simple spray pyrolysis technique under atmospheric pressure at temperature 350 °C. The doping concentration of Cu was varied from 1 to 8 wt. % while all other deposition parameters such as spray rate, carrier air gas pressure, deposition time, and distance between spray nozzle to substrate were kept constant. Surface morphology of the as-deposited thin films has been studied by Scanning Electron Microscopy (SEM. The SEM micrograph of the films shows uniform deposition. The structural properties of the as-deposited and annealed thin films have been studied by XRD and the electrical characterization was performed by Van-der Pauw method. The as-deposited films are found polycrystalline in nature with tetragonal crystal structure. Average grain sizes of pure and Cu doped SnO2 thin film have been obtained in the range of 7.2445 Å to 6.0699 Å, which indicates the nanometric size of SnO2 grains developed in the film. The resistivity of SnO2 films was found to decrease initially from 4.5095×10−4 Ωm to 1.1395× 10−4 Ωm for concentration of Cu up to 4 % but it was increased further with increasing of Cu concentrations. The experimental results depict the suitability of this material for using as transparent and conducting window materials in solar cells and gas sensors.

Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

Science.gov (United States)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Characteristics of CuInSe2 thin films grown by the selenization method

International Nuclear Information System (INIS)

Kim, Sang Deok; Kim, Hyeong Joon; Adurodija, Frederick Ojo; Yoon, Kyeong Hoon; Song, Jin Soo

1999-01-01

CuInSe 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn 2 and Cu 11 In 9 . A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm

Deposition and characterization of CuInSe2 thin films

International Nuclear Information System (INIS)

Dhere, N.G.; Ferreira, C.L.; Cruz, L.R.O.; Mattoso, I.G.; Alves, R.M.P.

1988-01-01

CuInSe 2 thin films with 1,3 to 1,7 μm of thickness were deposited by the constituent elements (copper, indium and selenium) in glass substrate. The producted films were characterized by scanning microscopy, X-ray diffraction, Auger electron spectroscopy, Hall effect measures and optical absorption. (C.G.C.) [pt

AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

International Nuclear Information System (INIS)

Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

1997-01-01

c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

Chemical solution deposition of CaCu 3 Ti 4 O 12 thin film

Indian Academy of Sciences (India)

CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron ...

Some physical parameters of CuInGaS_2 thin films deposited by spray pyrolysis for solar cells

International Nuclear Information System (INIS)

Kotbi, Ahmed; Hartiti, Bouchaib; Fadili, Salah; Ridah, Abderraouf; Thevenin, Philippe

2017-01-01

Copper-indium-gallium-disulphide (CuInGaS_2) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS_2 (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS_2 films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm"-"1. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E_T_a_i_l) of CuInGaS_2 thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS_2 make them an attractive material for photovoltaic devices. (orig.)

Cu{sub 2}ZnSnS{sub 4} thin films by simple replacement reaction route for solar photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Tiwari, Devendra, E-mail: devendratiwari.rnd@ecchanga.ac.in [Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Chaudhuri, Tapas K. [Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Ray, Arabinda [P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Tiwari, Krishan Dutt [Powerdeal Energy Systems - India, Private Limited, Nashik 422010, Maharashtra (India)

2014-01-31

A process for deposition of Cu{sub 2}ZnSnS{sub 4} (CZTS) films using replacement of Zn{sup 2+} in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10{sup 17} cm{sup −3} and 1.4 cm{sup 2}V{sup −1} s{sup −1} respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO{sub 2}:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm{sup 2}, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu{sub 2}ZnSnS{sub 4} thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm{sup 2} S{sup −1} V{sup −1} • Fabrication of Graphite/Cu{sub 2}ZnSnS{sub 4}/CdS/ZnO/SnO{sub 2}:In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62.

Effects of diethanolamine on sol–gel–processed Cu{sub 2}ZnSnS{sub 4} photovoltaic absorber thin films

Energy Technology Data Exchange (ETDEWEB)

Kahraman, S., E-mail: suleymanmku@gmail.com; Çetinkaya, S.; Çetinkara, H.A.; Güder, H.S.

2014-02-01

Highlights: • DEA content significantly affected the crystal structure and the phase purity. • The films’ crystallite sizes increased with increasing DEA content. • Two different impurity levels were found for each film via R-T characteristics. • Under different illuminations, the n-Si/CZTS exhibited good photo-response. • The light on/off current ratios confirmed the photo-sensitivity of the junction. - Abstract: As a promising solar absorber, the Cu{sub 2}ZnSnS{sub 4} compound has been popular recently for the production of green and economical thin-film solar cells owing to the abundancy and non-toxicity of all the constituents. In this study, we have produced Cu{sub 2}ZnSnS{sub 4} films via the sol–gel technique. As a stabilizer, the effects of the diethanolamine on the properties of the films were investigated. The amount of diethanolamine significantly affected the crystal structure, crystallite sizes and phase purity of the films. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. It was found that the film produced by using 2 ml of diethanolamine in sol exhibited pure CZTS phase, compact and dense morphology and enhanced photo-sensitivity. Light on/off current ratio of the n-Si/Cu{sub 2}ZnSnS{sub 4} junction was found to be 47 under 100 mW/cm{sup 2} of illumination. Electrical activation energies of the films were investigated and the variations were attributed to delocalized phonon states generating from the presence of other phases and lattice defects.

A novel application of the CuI thin film for preparing thin copper nanowires

International Nuclear Information System (INIS)

Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

2005-01-01

We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

Magnetic and structural study of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Torres, C.E. Rodriguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina)], E-mail: torres@fisica.unlp.edu.ar; Golmar, F. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H. [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

2007-10-31

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO{sub 2} thin films were grown by pulsed laser deposition technique on LaAlO{sub 3} substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO{sub 2}. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO{sub 2}.

Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

Science.gov (United States)

Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

2018-03-01

It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

Energy Technology Data Exchange (ETDEWEB)

Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

2017-05-15

Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)

Synthesis and characterization of spray deposited CZTS thin films for photo-electrochemical application

Science.gov (United States)

Chavda, Arvind; Patel, Biren; Mukhopadhyay, Priyanka Marathey Indrajit; Ray, Abhijit

2018-05-01

Cu2ZnSnS4 (CZTS) is one of the most promising light absorber materials for photovoltaic and photo-electrochemical applications. We synthesized CZTS thin films on a F:SnO2 and soda lime glass substrates by very simple, cost effective and highly scalable spray pyrolysis technique. The films were post treated by rapid thermal processing route of sulfurization to enhance the stoichiometry and crystallinity of the film. The structural, morphological, optical and electrical properties of RTP sulfurized films were studied. The X-ray diffraction (XRD) pattern revealed the formation of tetragonal CZTS phase, which confirmed by Raman analysis with a major peak at 336 cm-1 without the presence of the principle vibration mode of any other secondary phases, such as Cu2SnS3, CuxS(x=1.8,2) etc. The sulfurized film exhibited increased crystallinity and better stoichiometry. The optical and electrical data reveal the direct optical band gap, bulk carrier concentration and resistivity of 1.5 eV, 2.28×1018 cm-3 and 1.21 Ω/cm2, respectively. Finally the photoactivity of CZTS thin films was tested by forming photoelectrochemical cell in 0.1M Na2S2O3 electrolyte (pH=7.72), showing a cathodic photocurrent of nearly 20 µA/cm2 at 0V RHE.

Processing of La/sub 1.8/Sr/sub 0.2/CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

International Nuclear Information System (INIS)

Madakson, P.; Cuomo, J.J.; Yee, D.S.; Roy, R.A.; Scilla, G.

1988-01-01

High quality La/sub 1.8/Sr/sub 0.2/CuO 4 and YBa 2 Cu 3 O 7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF 2 , Si, CaF 2 , ZrO 2 -9% Y 2 O 3 , BaF 2 , Al 2 O 3 , and SrTiO 3 . Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa 2 Cu 2 O 7 structure, in the case of SrTiO 3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction

Optical, structural and photocatalysis properties of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Bensouici, F., E-mail: fbensouici@yahoo.fr [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Bououdina, M.; Dakhel, A.A. [Department of Physics, College of Science, University of Bahrain, PO Box 32038 (Bahrain); Tala-Ighil, R.; Tounane, M.; Iratni, A. [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Souier, T. [Department of Physics, College of Science, Sultan Qaboos University, PO Box 36 (Oman); Liu, S.; Cai, W. [Key laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Technology, Center for Environmental and Energy Nanomaterials, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2017-02-15

Highlights: • A simple chemical route to obtain thin layers of Cu doped TiO{sub 2}. • Detailed structure analysis was carried out by Rietveld refinements. • Forming the CuO phase decreases the efficiency photocatalysis of TiO{sub 2}. - Abstract: Pure and Cu{sup +2} doped TiO{sub 2} thin films have been successfully deposited onto glass substrate by sol–gel dip-coating. The films were annealed at 450 °C for 1 h and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM-EDX), atomic force microscopy (AFM), UV–vis spectrophotometer and photocatalytic degradation of methylene blue. XRD confirmed the presence of two phases at higher Cu concentration; TiO{sub 2} anatase and CuO. AFM analysis showed that the surface roughness increases within increasing Cu content as well as the presence of large aggregates at higher Cu content. SEM observations confirmed the granular structure of the films, and EDX analysis revealed a low solubility limit (effective doping) of Cu into TiO{sub 2} lattice. It was found that the optical band gap energy decreases with increasing Cu content. At constant irradiation time, the photo-degradation of methylene blue rate decreased with increasing concentration of Cu{sup +2}.

Preparation and characterization of CuInSe2 particles via the hydrothermal route for thin-film solar cells

International Nuclear Information System (INIS)

Wu, Chung-Hsien; Chen, Fu-Shan; Lin, Shin-Hom; Lu, Chung-Hsin

2011-01-01

Highlights: → A new hydrothermal process for preparing copper indium diselenide (CuInSe 2 ). → Well-crystallized CuInSe 2 particles are obtained at 180 deg. C for 1 h. → Densified CuInSe 2 thin films are prepared from ink printing. → Increasing temperatures result in an improvement of properties of CuInSe 2 films. - Abstract: CuInSe 2 powders with a chalcopyrite structure used in thin-film solar cells were successfully prepared via a hydrothermal method at low temperatures within short durations. Well-crystallized CuInSe 2 particles were formed via the hydrothermal reaction at 180 deg. C for 1 h. The concentrations of stabilizer, triethanolamine (TEA), significantly affected the purity, morphology and particle sizes of the prepared powders. Increasing the reaction duration and temperatures led to decrease the amount of second phase In(OH) 3 and resulted in the formation of pure CuInSe 2 . Densified CuInSe 2 thin films were prepared from ink printing with the addition of the flux. Increasing the selenization temperatures increased the grain size and improved the crystallinity of CuInSe 2 films.

A Novel Ternary CoFe2O4/CuO/CoFe2O4 as a Giant Magnetoresistance Sensor

Directory of Open Access Journals (Sweden)

Ramli

2016-12-01

Full Text Available This paper reports the results of a study relating to the synthesis of a novel ternary CoFe2O4/CuO/CoFe2O4 thin film as a giant magnetoresistance (GMR sensor. The CoFe2O4/CuO/CoFe2O4 thin film was prepared onto silicon substrate via DC magnetron sputtering with the targets facing each other. X-ray diffraction was used to determine the structure of the thin film and a 4-point method was used to measure the MR ratio. The GMR ratio is highly dependent on the ferrimagnetic (CoFe2O4 and nonmagnetic (CuO layer thickness. The maximum GMR ratio at room temperature obtained in the CoFe2O4/CuO/CoFe2O4 thin film was 70% when the CoFe2O4 and the CuO layer had a thickness of 62.5 nm and 14.4 nm respectively.

The order-disorder transition in Cu2ZnSnS4: A theoretical and experimental study

International Nuclear Information System (INIS)

Quennet, Marcel; Ritscher, Anna; Lerch, Martin; Paulus, Beate

2017-01-01

In this work the Cu/Zn order-disorder transition in Cu 2 ZnSnS 4 kesterites on Wyckoff positions 2c and 2d was investigated by a structural and electronic analysis in theory and experiment. For experimental investigations stoichiometric samples with different Cu/Zn order, annealed in the temperature range of 473–623 K and afterwards quenched, were used. The optical gaps were determined using the Derivation of Absorption Spectrum Fitting (DASF) method. Furthermore, the order-disorder transition was examined by DFT calculations for a closer analysis of the origins of the reduced band gap, showing a good agreement with experimental data with respect to structural and electronic properties. Our studies show a slight increase of lattice parameter c in the kesterite lattice with increasing disorder. Additionally, a reduced band gap was observed with increasing disorder, which is an effect of newly occurring binding motifs in the disordered kesterite structure. - Highlights: • Experimental and theoretical investigation on the order-disorder transition in kesterites. • Slight enlargements of lattice constants due to disorder in experiment and theory. • Strong band gap fluctuations with decreasing order. • Electronic structure deviations due to changing binding motifs. • Disorder as possible main source of low open-circuit voltages.

Photoinduced Optical Spectroscopy of La2CuO4+x Single Crystals and C60 Thin Films

International Nuclear Information System (INIS)

Bazhenov, A.V.; Gorbunov, A.V.; Timofeev, V.B.

1995-01-01

The evolution of both vibration and electronic spectra of insulating La 2 CuO 4+x single crystals upon charge-transfer gap photoexcitation has been studied by means of photoinduced reflection spectroscopy. Interaction of self-localized hole with some of the A g , B 2g (B 3g ), B 3u optical phonons has been observed. Formation of self-localized hole state and its multiparticle complexes is supposed. Photoinduced absorption in C 60 thin films has been found to differ essentially from that in cuprates

Fabrication and characterization of CuAlO2 transparent thin films prepared by spray technique

International Nuclear Information System (INIS)

Bouzidi, C.; Bouzouita, H.; Timoumi, A.; Rezig, B.

2005-01-01

CuAlO 2 thin films have been grown on glass substrates using spray technique; a low-cost method of thin films depositing. The deposition was carried out in a 450-525 deg. C range of substrate temperature. The solution and gas flow rates were kept constant at 5 cm 3 min -1 and 6.10 -3 m 3 min -1 , respectively. Compressed air was used as a carrier gas. The structural, morphological and optical properties of these thin films have been studied. These properties are strongly related to the substrate temperature and to the [Cu]/[Al] molar ratio r. X-ray diffraction analysis confirmed the initial amorphous nature of as-deposited films and phase transition into crystalline CuAlO 2 with the preferential orientation (1 0 1) upon annealing at 570 deg. C. The optical transmission of 80% has been achieved in the visible spectrum. CuAlO 2 band gap energy in the range of 3.34-3.87 eV has been found by optical measurement depending on fabrication parameters

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla, Sweden and Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden); Sterner, Jan [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla (Sweden); Platzer-Björkman, Charlotte [Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden)

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.

Characteristics of CuInSe sub 2 thin films grown by the selenization method

CERN Document Server

Kim, S D; Adurodija, F O; Yoon, K H; Song, J S

1999-01-01

CuInSe sub 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn sub 2 and Cu sub 1 sub 1 In sub 9. A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe sub 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe sub 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm.

Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

2015-11-02

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

Electrical and optical properties of CZTS thin films prepared by SILAR method

Directory of Open Access Journals (Sweden)

J. Henry

2016-03-01

Full Text Available In the present work, Cu2ZnSnS4 (CZTS thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed. X-ray diffraction (XRD analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (104 cm−1 in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54 eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10−2 Ω cm at room temperature.

Electrical transport in (103) YBa2Cu3O7-x thin films

International Nuclear Information System (INIS)

Divin, Yu.Ya.; Poppe, U.; Faley, M.I.; Soltner, H.; Seo, J.W.; Kabius, B.; Urban, K.

1993-01-01

We have studied the electrical and structural properties of (103) YBa 2 Cu 3 O 7-x thin films to estimate the applicability of these films as base electrodes of planar-type Josephson junctions. (orig.)

An investigation on silar Cu(In1-xAlx)Se2 thin films

International Nuclear Information System (INIS)

Dhanam, M.; Kavitha, B.; Velumani, S.

2010-01-01

Cu(In 1-x Al x )Se 2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Effects of sulfurization on the optical properties of Cu2ZnxFe1-xSnS4 thin films

Science.gov (United States)

Hannachi, A.; Oueslati, H.; Khemiri, N.; Kanzari, M.

2017-10-01

In order to prepare thin films of novel semiconductor materials that contain only earth abundant, low cost and nontoxic elements, Cu2ZnxFe1-xSnS4 ingots were successfully synthesized by direct fusion method. Crushed powders of these ingots were used as raw materials for the thermal evaporation. Cu2ZnxFe1-xSnS4 (with x = 0, 0.25, 0.5, 0.75 and 1) thin films were deposited on non-heated glass substrates by vacuum evaporation method. The as deposited films were sulfurized for 30 min at sulfurization temperature Ts = 400 °C. The effects of the sulfurization on the structural and optical properties of CZFTS films were realized by X-ray diffraction (XRD) and UV-Vis spectroscopy. XRD patterns show that all sulfurized CZFTS films were polycrystalline in nature with a preferential orientation along the (112) plane. CFTS films exhibit a stannite structure while CZTS films had a kesterite structure. Optical measurements showed that CZFTS films sulfurized at 400 °C exhibited an optical transmittance between 60 and 80% and all materials had relatively high absorption coefficients in the range of 104-105 cm-1. The band gap energies of sulfurized CZFTS films decreased from 1.71 to 1.50 eV with the increase of the Zn content. The dispersion of the refractive index was discussed in terms of the single oscillator model proposed by Wemple and DiDomenico and the optical parameters such as refractive index, extinction coefficient, oscillator energy and dispersion energy were calculated. The electrical free carrier susceptibility and the carrier concentration on the effective mass ratio were evaluated according to the model of Spitzer and Fan. The hot probe analysis showed that all sulfurized CZFTS films are p-type conductivity.

Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

Science.gov (United States)

Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

2017-10-01

Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

Resistivity Effects of Cation Ordering in Highly-Doped La2-xSrxCu4 Epitaxial Thin Films

Science.gov (United States)

Burquest, Franklin; Marmol, Rodrigo; Cox, Nicholas; Nelson-Cheeseman, Brittany

Highly-doped La2-xSrxCuO4 (LSCO) films (0.5 causes internal polar electrostatic forces, which have been shown to cause stretching of the apical oxygen bond in analogous epitaxial nickelate films. Thin film samples are grown concurrently to minimize extraneous effects on film structure and properties. Atomic force microscopy and x-ray reflectivity demonstrate that the films are single crystalline, epitaxial, and smooth. X-ray diffraction is used to measure the c-axis of the films as a function of doping and dopant cation ordering. Electrical transport data of the ordered samples is compared with transport data of conventional disordered cation samples. Preliminary data indicates significant differences in resistivity at both 300K and 10K between the cation-ordered and cation-disordered samples. This work indicates that dopant cation ordering within the layered cuprates could significantly modify the conduction mechanisms at play in these materials.

Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films

International Nuclear Information System (INIS)

Zribi, M.; Kanzari, M.; Rezig, B.

2008-01-01

Structural and optical properties of Na-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 deg. C in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In 6 S 7 , which disappeared on annealing above 350 deg. C. Good quality CuInS 2 :Na 0.3% films were obtained on annealing at 500 deg. C. Furthermore, we found that the absorption coefficient of Na-doped CuInS 2 thin films reached 1.5 x 10 5 cm -1 . The change in band gap of the doped samples annealed in the temperatures from 250 to 500 deg. C was in the range 0.038-0.105 eV

Molecular dynamics simulation of Cu/Au thin films under temperature gradient

International Nuclear Information System (INIS)

Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng

2015-01-01

Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

Molecular dynamics simulation of Cu/Au thin films under temperature gradient

Energy Technology Data Exchange (ETDEWEB)

Li, Qibin, E-mail: qibinli@cqu.edu.cn [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Peng, Xianghe [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Peng, Tiefeng, E-mail: pengtiefeng@cqu.edu.cn [State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Tang, Qizhong [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Zhang, Xiaomin [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Huang, Cheng [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China)

2015-12-01

Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

Infrared refractive index of thin YBa2Cu3O7 superconducting films

International Nuclear Information System (INIS)

Zhang, Z.M.; Choi, B.I.; Le, T.A.; Flik, M.I.; Siegal, M.P.; Phillips, J.M.

1992-01-01

This work investigates whether thin-film optics with a constant refractive index can be applied to high-T c superconducting thin films. The reflectance and transmittance of YBa 2 Cu 3 O 7 films on LaAlO 3 substrates are measured using a Fourier-transform infrared spectrometer at wavelengths from 1 to 100 μm at room temperature. The reflectance of these superconducting films at 10K in the wavelength region from 2.5 to 25 μm is measured using a cryogenic reflectance accessory. The film thickness varies from 10 to 200 nm. By modeling the frequency-dependent complex conductivity in the normal and superconducting states and applying electromagnetic-wave theory, the complex refractive index of YBa 2 Cu 3 O 7 films is obtained with a fitting technique. It is found that a thickness-independent refractive index can be applied even to a 25nm film, and average values of the spectral refractive index for film thicknesses between 25 and 200 nm are recommended for engineering applications

Spin-on Bi4Sr3Ca3Cu4O16μ/sub x/ superconducting thin films from citrate precursors

International Nuclear Information System (INIS)

Furcone, S.L.; Chiang, Y.

1988-01-01

Thin films in the Bi-Sr-Ca-Cu-O system have been synthesized from homogeneous liquid citrate precursors by a spin-coating and pyrolysis method. Films prepared on SrTiO 3 substrates of [100] orientation show strongly textured orientations with the c axis of the predominant Bi 4 Sr 3 Ca 3 Cu 4 O 16 μ/sub x/ phase normal to the film plane. In a single coating and firing, crack-free films of 0.2--0.5 μm thickness are obtained. For films fired to peak temperatures of 850--875 0 C, linearly decreasing resistance with temperature is observed, with rho (300 K)∼460 μΩ cm and rho (300 K)rho (100 K)∼2.4. Clear onsets of superconductivity are observed at 90--100 K, with occasional films showing smaller resistant drops at 110--120 K. For all films, T/sub c/ (R = 0) occurs in the range 70--75 K. High critical current densities at 4.2 K of 5--8 x 10 5 Acm 2 are measured by direct transport

Phase controlled solvothermal synthesis of Cu_2ZnSnS_4, Cu_2ZnSn(S,Se)_4 and Cu_2ZnSnSe_4 Nanocrystals: The effect of Se and S sources on phase purity

International Nuclear Information System (INIS)

Pal, Mou; Mathews, N.R.; Paraguay-Delgado, F.; Mathew, X.

2015-01-01

In this study, we have reported the synthesis of Cu_2ZnSnSe_4 (CZTSe), Cu_2ZnSnS_4 (CZTS) and Cu_2ZnSn(S,Se)_4 (CZTSSe) nanocrystals with tunable band gap and composition obtained by solvothermal method. The crystalline structure, composition, morphology and optical properties of the nanoparticles were characterized by X-ray diffraction (XRD), Raman scattering, energy dispersive X-ray spectroscopy, transmission electron microscopy and diffuse reflectance (DR) spectroscopy. While the XRD patterns of CZTS and CZTSe nanoparticles prepared with elemental S/Se powder revealed the presence of phase pure nanoparticles, the CZTSSe nanoparticles obtained using a mixture of S and Se, were found to contain many secondary phases under the same synthesis protocol. Formation of impurity phases in CZTSSe sample, can be avoided by using a mixture of 1-dodecanethiol (DT; CH_3(CH_2)_1_1SH)/oleylamine (OLA) instead of S powder and following the same experimental procedure. The incorporation of S in CZTSe nanocrystals prepared in presence of DDT/OLA mixture was confirmed through structural and optical characterizations. The optical properties of the quaternary chalcogenide nanocrystals were found to vary with the chemical composition of the material. - Highlights: • Solvothermal synthesis of CZTS, CZTSSe and CZTSe nanocrystals and discussion on possible formation mechanism. • Use of dodecanethiol/oleylamine mixture to synthesize phase-pure CZTSSe nanocrystals. • Formation of impurity phases can be controlled with proper S and Se sources.

Growth and properties of CuInS2 thin films

International Nuclear Information System (INIS)

Agarwal, M.K.; Patel, P.D.; Chaki, Sunil H.; Lakshminarayana, D.

1998-01-01

Single phase copper indium disulphide (CuInS 2 ) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to be n-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a temperature of 523 K at a molybdenum source temperature of 1873 K. (author)

Photon induced facile synthesis and growth of CuInS{sub 2} absorber thin film for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Manjeet, E-mail: msitbhu@gmail.com [Department of Physics, Incheon National University, 12-1, Songdo-dong, Yeonsu-gu, Incheon 406-772 (Korea, Republic of); Jiu, Jinting; Suganuma, Katsuaki [Department of Advanced Interconnection Materials, Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047 (Japan)

2016-04-30

Graphical abstract: The thin film containing CuS and In{sub 2}S{sub 3} can be converted into CuInS{sub 2} by irradiation of intense pulses of light. - Highlights: • Photonic sintering technique is demonstrated for CuInS{sub 2} (CIS) thin film preparation. • The binary sulfides CuS and In{sub 2}S{sub 3} are converted into CIS using intense light pulses. • The light energy of 706 mJ/cm{sup 2} is found best for phase pure CIS film formation. - Abstract: In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS{sub 2} (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In{sub 2}S{sub 3} to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm{sup 2} is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

Visible light assisted photoelectrocatalytic degradation of sugarcane factory wastewater by sprayed CZTS thin films

Science.gov (United States)

Hunge, Y. M.; Mahadik, M. A.; Patil, V. L.; Pawar, A. R.; Gadakh, S. R.; Moholkar, A. V.; Patil, P. S.; Bhosale, C. H.

2017-12-01

Highly crystalline Cu2ZnSnS4 (CZTS) thin films have been deposited onto glass and FTO coated glass substrates by simple chemical spray-pyrolysis technique. It is an important material for solar energy conversion through the both photovoltaics and photocatalysis. The effect of substrate temperatures on the physico-chemical properties of the CZTS films is studied. The XRD study shows the formation of single phase CZTS with kesterite structure. FE-SEM analysis reveals nano flakes architecture with pin-hole and crake free surface with more adherent. The film deposited at optimized substrate temperature exhibits optical band gap energy of 1.90 eV, which lies in the visible region of the solar spectrum and useful for photocatalysis application. The photoelectrocatalytic activities of the large surface area (10 × 10 cm2) deposited CZTS thin film photocatalysts were evaluated for the degradation of sugarcane factory wastewater under visible light irradiation. The results show that the CZTS thin film photocatalyst exhibited about 90% degradation of sugar cane factory wastewater. The mineralization of sugarcane factory wastewater is studied by measuring chemical oxygen demand (COD) values.

YBa2Cu3O(7-x) based superconducting thin films by multitarget sputtering

International Nuclear Information System (INIS)

Bouteloup, E.; Mercey, B.; Poullain, G.; Brousse, T.; Murray, H.; Raveau, B.

1990-01-01

This paper reports a new technique to prepare superconducting YBa 2 Cu 3 O (7-x) thin films. The multitarget sputtering apparatus described below allows the simultaneous and reproducible production of numerous films with a metallic composition close to Y 17% Ba 33% Cu 50% . Superconducting films (R = 0) at 80 K have been produced on polycrystalline zirconia substrates after a high temperature annealing [fr

First-principles studies on the properties of Cu2ZnSnS4 grain-b oundaries due to photovoltaic effect%Cu2ZnSnS4晶界性质与光伏效应的第一性原理研究∗

Institute of Scientific and Technical Information of China (English)

范巍; 曾雉

2015-01-01

Microstructures and electronic structures of Cu2ZnSnS4 (CZTS) grain-boundaries (GB) are studied by the first-principles electronic structure method. Some special twist grain-boundaries have low grain-boundary energies and exhibit similar electronic structure as that in a perfect crystal. The twist grain-boundaries such as Σ3[221] and Σ6[221] have grain-boundary planes parallel to (112) plane, the easiest cleavage plane, so that they have small damages to the crystal structure and small influence on the properties of the materials. Grain-boundary plays two roles in CZTS thin-films:(1) capturing and trapping holes from p-n junctions, and (2) providing fast channels for transportation of majority carriers. As the majority of carriers, the positively charged holes need override a barrier before being trapped by a potential-well in the grain-boundary region. For the minority of carriers, the grain boundary is a high barrier to prevent electrons from transporting across it. The intrinsic nature of the potential barrier is not very clear. By calculating the distributions of static potentials across different grain boundaries of CZTS and also by comparing them with those across different surfaces, we find that the potential barriers at grain boundaries are the remnants of the potential barriers of surfaces, which trap the electrons in the bulk and prevent the electrons from escaping from the bulk to vacuum. When two surfaces get contact to form a grain boundary the corresponding surface barriers will be merged together as one potential barrier of the grain boundary. It is obvious that if a grain boundary intersects with the surface, the escaping work function near the grain boundary is lower than that near the prefect crystal surface. Experiment shows the coexistence of Sn4+ and Sn2+ions. The Sn4+ ions are located in the bulk by bonding 4 S atoms as neighbors. Our results show that Sn2+ ions can appear in the grain-boundary regions, on the surfaces or in the bulk with

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi; Schwingenschlö gl, Udo

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order

Control of gallium incorporation in sol–gel derived CuIn(1−x)GaxS2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Bourlier, Yoan; Cristini Robbe, Odile; Lethien, Christophe

2015-01-01

Highlights: • CuIn (1−x) Ga x S 2 thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S 2 chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn (1−x) Ga x S 2 thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn (1−x) Ga x S 2, clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4

Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

International Nuclear Information System (INIS)

Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

2004-01-01

We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

Phase transformation during simultaneous chalcogenization of CuIn(S,Se){sub 2} thin films using metalorganic sources

Energy Technology Data Exchange (ETDEWEB)

Shoji, Ryuki; Kayama, Yoshiki; Sugiyama, Mutsumi [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

2017-06-15

Simultaneous chalcogenization of CuIn(S{sub y},Se{sub 1-y}){sub 2} (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C{sub 2}H{sub 5}){sub 2}Se] and ditertiarybutylsulfide [(t-C{sub 4}H{sub 9}){sub 2}S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu{sub 11}In{sub 9} metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Sensors of the gas CO in thin film of SnO2:Cu

International Nuclear Information System (INIS)

Tirado G, S.; Sanchez Z, F. E.

2011-10-01

Thin films of SnO 2 :Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO 2 were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO 2 :Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO 2 :Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

Aqueous chemical growth of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films: Air annealing and photoelectrochemical properties

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.M.; Deshmukh, P.R.; Patil, S.V. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

2013-05-15

Highlights: ► Facile and efficient route for synthesis of CZTS film. ► Effect of annealing on structural, morphological and electrical properties of CZTS films. ► Solar cell study. - Abstract: In present investigation, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been deposited on to glass substrates by novel chemical successive ionic layer adsorption and reaction (SILAR) method. The effect of air annealing in the temperature range between 573 and 773 K on the structural, morphological, optical and electrical properties has been studied. The X-ray diffraction studies revealed the formation of polycrystalline CZTS films. The surface morphological study showed smooth, compact and uniform film formation after annealing formation. The band gap was in between range from 1.5 to 1.8 eV depending on annealing temperature. The thermo emf measurement revealed that the CZTS exhibits p-type electrical conductivity. Further, photoactivity of CZTS thin films was tested by forming the photoelectrochemical cell.

Investigations on the role of alkali to obtain modulated defect concentrations for Cu{sub 2}O thin films

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Anirban, E-mail: anirban.chowdhury@gmail.com [Research and Development, Tata Steel Limited, Jamshedpur, 831001 (India); Bijalwan, Pavan Kumar [Research and Development, Tata Steel Limited, Jamshedpur, 831001 (India); Sahu, Ranjan Kumar [MST Division, CSIR-National Metallurgical Laboratory, Jamshedpur, 831007 (India)

2014-01-15

An economic successive ionic layer adsorption and reaction (SILAR) method has been investigated for depositing thin Cu{sub 2}O layers on steel. The mole ratios of the Cu{sup +} ions to OH{sup −} ions in the alkali bath were varied and the changes in the properties were characterised by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM) and Ultraviolet–visible spectroscopy techniques. The increase in the binding energy values of the Cu 2p peaks in XPS established that an optimum copper vacancy concentration can be obtained for a Cu{sup +}/OH{sup −} mole ratio between 1:10 and 1:15; SEM studies confirmed a dense, uniform microstructure for Cu{sub 2}O thin films coated with these compositions. The strongest absolute peak intensity counts in PL for the peak at 580 nm along with low energy peaks (1.2–1.4 eV) due to Cu vacancy was found to be most prominent for thin film made with Cu{sup +}/OH{sup −} mole ratio 1:15. The role of alkali concentration has been explained in relation to create a stable Cu{sub 2−δ}O structure with optimum copper vacancy. This is an easy way to modulate surface reactivity of the Cu{sub 2}O thin layers and the concept can be utilised for large area device integrations for various electrical and mechanical applications.

Rapid synthesis of flower shaped Cu_2ZnSnS_4 nanoparticles by microwave irradiation for solar cell application

International Nuclear Information System (INIS)

Ansari, Mohd Zubair; Khare, Neeraj

2016-01-01

Single phase Cu_2ZnSnS__4 (CZTS) nanoparticles have been synthesized by the microwave-assisted solution method in a one step process. Structural, morphological and optical characterizations of the CZTS nanoparticles have been carried out. X-ray diffraction confirms the single phase formation of CZTS nanoparticles with kesterite structure. SEM confirms the homogenous distribution of CZTS nanoparticles flower like assemblies. High resolution TEM image confirms the good crystallinity of the CZTS nanoparticles with the average grain size ~20 nm. The CZTS nanoparticles have strong optical absorption in the visible region with direct band gap as ~1.6 eV which is optimal for photovoltaic application

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Electrochemical preparation and characterization of CuInSe2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Guillen Arqueros, C.

1992-01-01

The objective of this work has been to investigate the electrodeposition as a low-cost, large-area fabrication process to obtain CuInSe 2 this films for efficient photovoltaic devices. this objective entails the elucidation of thin film deposition mechanism, the study of the fundamental properties of electrodeposited material, and also the modification of their physical and chemical parameters for photovoltaic applications. CuInSe 2 thin films have been successfully electrodeposited from a citric was characterized by compositional, structural, electrical, optical and electrochemical measurements, relating their properties with the preparation parameters and also studying the effect of various thermal and chemical treatments. The results showed post-deposition treatment are needed for optimizing these films for solar cells fabrication: first, an annealing in inert atmosphere at temperatures above 400 degrees celsius to obtain a high recrystallization in the chalcopyrite structure, and after a chemical etching in KCN solution to remove secondary phases of Cu x Se and Se which are frequently electrodeposited with the CuInSe 2 . The treated samples showed appropriate photovoltaic activity in a semiconductor-electrolite liquid junction. (author) 193 ref

Effect of annealing temperature on a single step processed Cu{sub 2}ZnSnS{sub 4} thin film via solution method

Energy Technology Data Exchange (ETDEWEB)

Prabeesh, P.; Selvam, I. Packia; Potty, S.N.

2016-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising material for thin film solar cell applications because of its excellent photovoltaic properties, high abundance and non-toxicity. Thin films of CZTS are generally fabricated by vacuum based techniques or by using toxic solvents and these routes reduce its attention as a low cost and environmental friendly material. In this study, we have prepared CZTS through a solution based single step approach using non-toxic chemicals by spin coating and studied the effect of annealing temperature in the range 350–550 °C in nitrogen atmosphere on structural, optical and electrical properties. XRD results revealed the formation of kesterite phase at all annealing temperatures, while the Raman studies indicated Cu{sub 2}SnS{sub 2} impurity phase in the film annealed at 550 °C. Band gap of the films annealed in nitrogen varies from 1.46 eV to 1.56 eV, depending on the annealing temperature. Optimum properties, such as, good crystallinity, dense structure, ideal band gap (1.49 eV) and good absorption coefficient (10{sup 4} cm{sup −1}), were obtained for the film annealed at 500 °C for 30 min in nitrogen. - Highlights: • Prepared CZTS film through one-step liquid based approach using non-toxic chemicals. • Studied the effect of N{sub 2} annealing on structural, optical and electrical properties. • The phase pure CZTS absorber film exhibited excellent photovoltaic properties • The film annealed at 500 °C for 30 min in nitrogen exhibited optimum properties.

Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

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Tai-Hsiang Lui

2015-01-01

Full Text Available Cu2Sn3S7 (CTS can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.

Preparation of CuAlO2 Thin Films by Sol-Gel Method Using Nitrate Solution Dip-Coating

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Ehara Takashi

2016-01-01

Full Text Available CuAlO2 thin films are prepared by sol-gel dip-coating followed by annealing in nitrogen atmosphere using copper nitrate and aluminum nitrate as metal source materials. X-ray diffraction (XRD patterns show (003, (006 and (009 oriented peaks of CuAlO2 at annealing temperature of 800 – 1000°C. This result indicates that the CuAlO2 films prepared in the present work are c-axis oriented. XRD peak intensity increase with annealing temperature and becomes maximum at 850°C. The CuAlO2 XRD peak decreased at annealing temperature of 900°C with appearance of a peak of CuO, and then increased again with annealing temperature until 1000 °C. The films have bandgap of 3.4 eV at annealing temperature of 850°C in which the transparency becomes the highest. At the annealing temperature of 850°C, scanning electron microscope (SEM observation reveals that the films are consist of amorphous fraction and microcrystalline CuAlO2 fraction.

Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

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Martina Gilić

2017-06-01

Full Text Available Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K and UV-VIS spectroscopy (T = 300K. Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.

Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

International Nuclear Information System (INIS)

Wong, L. M.; Chiam, S. Y.; Wang, S. J.; Pan, J. S.; Huang, J. Q.; Chim, W. K.

2010-01-01

Cu 2 O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu 2 O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu 2 O. Based on this finding, we fabricate heterojunctions of p-type Cu 2 O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu 2 O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu 2 O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu 2 O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Science.gov (United States)

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Crystallographic structure and grain size of polycrystalline Cu{sub 2}ZnSnS{sub 4} nanoparticles and thin films studied with XRD and SEM

Energy Technology Data Exchange (ETDEWEB)

Zutz, Folker; Chory, Christine; Riedel, Ingo; Parisi, Juergen [Thin Film Photovoltaics, Energy and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany)

2011-07-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is a compound semiconductor with an absorption coefficient of >10{sup 4} cm{sup -1} and energy gap of about 1.5 eV. Because CZTS is comprised of abundant and non-toxic precursor elements the semiconductor represents an attractive material for low-cost thin film solar cells. CZTS nanoparticles (NP) were prepared in a low-temperature colloidal synthesis yielding high amounts per synthesis cycle. For thin film deposition the NPs were converted to an ink which can be processed to thin films via printing techniques. Finally, the thin films were annealed in argon atmosphere at different temperatures in order to control the growth of microcrystallites. The photoelectrical quality of the semiconductor sensitively depends on the relative concentrations of the precursor elements (band gap, crystallographic phases) and the average grain size (charge transport). We report on structural investigations (X-ray diffraction, electron microscopy) of CZTS dried powders and thin films processed from inks with varying chemical compositions. Further, the evolution of the grain size was studied as function of the annealing temperature.

Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

1990-09-01

We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

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Jung-Sik Kim

2016-09-01

Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

Superconducting Tl2Ba2CaCu2O8 thin films prepared by post-annealing in a flow-through multiple-zone furnace

International Nuclear Information System (INIS)

Pluym, T.C.; Muenchausen, R.E.; Arendt, P.N.

1994-01-01

Tl 2 Ba 2 CaCu 2 O 8 thin films were prepared for the first time by use of a multiple-zone flow-through thallination process. Thallous oxide was volatilized from condensed thallium oxide in a low temperature source zone and convectively transported to a higher temperature thallination zone in which initially amorphous Ba 2 CaCu 2 O 5 precursor films were located. By careful control of the source temperature, film temperature, flow rate, anneal time, and rates of heat up and cool down, smooth Tl 2 Ba 2 CaCu 2 O 8 thin films were prepared on (100) LaAlO 3 with the following properties: inductive T c of 107.6 K and 80% transition width of 1.3 K, transport J c at 75 K of 1.3 x 10 5 A/cm 2 , and R s at 10 GHz and 80 K of 1.3 mΩ. The scalability of the process to large area film processing was demonstrated by the preparation of Tl 2 Ba 2 CaCu 2 O 8 thin films on LaAlO 3 three-inch diameter wafers

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

International Nuclear Information System (INIS)

Kergommeaux, Antoine de; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-01-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe 2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. (paper)

Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

Science.gov (United States)

Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2013-07-01

Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

Optical and Dielectric Properties of CuAl₂O₄ Films Synthesized by Solid-Phase Epitaxy

Energy Technology Data Exchange (ETDEWEB)

Leu, L. C. [University of Florida, Gainesville; Norton, David P. [University of Florida; Jellison Jr, Gerald Earle [ORNL; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Xiong, X. [SuperPower Incorporated, Schenectady, New York

2007-01-01

The synthesis and properties of CuAl{sub 2}O{sub 4} thin films have been examined. The CuAl{sub 2}O{sub 4} films were deposited via reactive direct current magnetron sputter using a CuAl{sub 2} target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl{sub 2}O{sub 4} was determined to be {approx} 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be {approx} 20-23 at 1-100 kHz.

Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

International Nuclear Information System (INIS)

De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

2012-01-01

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

Energy Technology Data Exchange (ETDEWEB)

Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

2013-03-15

In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

Characterization of CuInS2 thin films prepared by chemical bath deposition and their implementation in a solar cell

International Nuclear Information System (INIS)

Lugo, S.; López, I.; Peña, Y.; Calixto, M.; Hernández, T.; Messina, S.

2014-01-01

CuInS 2 thin films were formed by the sequential deposition of In 2 S 3 –CuS layers on glass substrates, by chemical bath deposition technique, and heating these multilayer 1 h at 350 °C and 400 mPa. The morphology and thickness of the CuInS 2 thin films were analysed by scanning electron microscopy, showing particles with elongated shape and length about 40 nm, and thickness of 267 and 348 nm for samples from 15 and 24 h of deposition time in the chemical bath of In 2 S 3 , respectively. The energy band gap values of the films were around 1.4 eV, whereas the electrical conductivity showed values from 64.91 to 4.11 × 10 −3 Ω −1 cm −1 for the samples of 15 and 24 h of In 2 S 3 deposition bath, respectively. The obtained CuInS 2 films showed appropriate values for their application as an absorbing layer in photovoltaic structures of the type: glass/SnO 2 :F/CdS/Sb 2 S 3 /CuInS 2 /PbS/C/Ag. The whole structure was obtained through chemical bath deposition technique. The solar cell corresponding to 15 h of In 2 S 3 deposition duration bath showed energy-conversion efficiency (η) of 0.53% with open circuit voltage (V oc ) of 530 mV, short circuit current density (J sc ) of 2.43 mA cm −2 , and fill factor (FF) of 0.41. In the case of the structure with 24 h of deposition of In 2 S 3 bath, η = 0.43% was measured with the following parameters: V oc = 330 mV, J sc = 4.78 mA cm −2 and FF = 0.27. - Highlights: • CuInS 2 films were formed by chemical bath deposition followed by a heat treatment. • Prepared CuInS 2 thin films can work as an effective absorbing layer in a solar cell. • A complete solar cell structure was made by a chemical bath deposition method

Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film

Science.gov (United States)

Zhang, Lin Rui; Li, Tong; Wang, Hao; Pang, Wei; Chen, Yi Chuan; Song, Xue Mei; Zhang, Yong Zhe; Yan, Hui

2018-02-01

In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag+ ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag+ ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential.

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

Science.gov (United States)

de Kergommeaux, Antoine; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-03-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. Invited talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

Energy Technology Data Exchange (ETDEWEB)

Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

2017-04-01

Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

Investigations of structural, morphological and optical properties of Cu:ZnO/TiO2/ZnO and Cu:TiO2/ZnO/TiO2 thin films prepared by spray pyrolysis technique

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available The aim of this research work is presented a comparison study of Cu:ZnO/TiO2/ZnO (Cu:ZTZ and Cu:TiO2/ZnO/TiO2 (Cu:TZT thin films deposited by spray pyrolysis technique on FTO substrates. After deposition, these films are annealed at 500 °C. XRD confirms the anatase phase of TiO2 and Hexagonal wurtzite phase of ZnO. SEM shows that Cu:TZT has more porous surface than Cu:ZTZ and also the root mean square (RMS roughness of Cu:TZT film is 48.96 and Cu:ZTZ film is 32.69. The calculated optical band gaps of Cu:TZT and Cu:ZTZ thin films are 2.65 eV and 2.6 eV respectively, measured by UV–Vis spectrophotometer. This work provides an environment friendly and low cost use of an abundant material for highly efficient dye sensitized solar cells (DSSCs. Keywords: Multilayer films, ZnO, TiO2, Cu

ENERGY EFFICIENCY OF A PHOTOVOLTAIC CELL BASED THIN FILMS CZTS BY SCAPS

Directory of Open Access Journals (Sweden)

C. Mebarkiaa

2016-05-01

Full Text Available In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS looks promising. Cu2ZnSnS4 (CZTS is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV [01] with a large absorption coefficient over 104 cm-1. Indeed, the performance of these cells exceeded 30% in recent years.In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS and thus evaluate the electrical efficiency η for typical structures of ZnO / i- ZnO / CdS / CZTS and ITO / ZnO / CdS / CZTS. Furthermore, the influence of the change of CdS by ZnSe buffer layer was treated in this paper.

Sol-gel deposition and electrical properties of laser irradiated Cu doped TiO2 multilayer thin films

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available Multilayer thin films (3, 5 and 7 of 20% copper doped titanium dioxide (Cu:TiO2 have been deposited on glass substrates by sol-gel spin coating method. After deposition, films have been irradiated by a beam of continuous wave diode laser (532 nm for two minutes at the angle of 45°. Structural, surface morphology and electrical properties of films have been investigated by X-rays diffraction (XRD, scanning electron microscope (SEM and four point probe technique respectively. XRD shows the formation of titanium copper oxide. Surface morphology of thin films indicated that the average grain size is increased by increasing the number of layers. The average sheet resistivity of 3, 5 and 7 layers of thin films measured by four point probe technique is 2.2 × 104, 1.2 × 104 and 1.0 × 104 (Ohm-cm respectively. The present study will facilitate a cost effective and environmental friendly study for several properties of materials. Keywords: Cu:TiO2, Multilayer thin films, Diode laser

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Physical and chemical properties of YBa2Cu3O7 thin films

International Nuclear Information System (INIS)

El-Samahi, M.I.

1991-12-01

Investigations were carried out to determine the influence of different annealing processes on the superconducting properties of the YBa 2 Cu 3 O 7 thin films. The samples were produced by means of coevaporation of Cu, Y and Ba on polycrystalline yttria stabilized (YSZ) ZrO 2 and single crystal SrTiO 3 (001) substrates. Subsequently, the as-deposited films were subjected to two different annealing methods to crystallize the superconducting phase YBa 2 Cu 3 O 7 : (i) heating up, annealing and cooling in an oxygen atmosphere and (ii) heating up in an innert gas atmosphere up to the maximum annealing temperature (T max ) and then annealing and cooling under oxygen. (orig.)

One-step chemical bath deposition and photocatalytic activity of Cu2O thin films with orientation and size controlled by a chelating agent

International Nuclear Information System (INIS)

Xu, HaiYan; Dong, JinKuang; Chen, Chen

2014-01-01

Nanocrystalline cuprous oxide (Cu 2 O) thin films were prepared via a one-step chemical bath deposition (CBD) method. The effects of a chelating agent on the orientation, morphology, crystallite size, and photocatalytic activity of the thin films were carefully examined using X-ray diffractometry, scanning electron microscopy, and UV–vis spectrophotometry. The results confirmed that the crystallite size as well as the orientation of the films was dependent on the volume of trisodium citrate (TSC), demonstrating that the band gap ranged from 2.71 eV to 2.49 eV. The morphology and number density of the thin films also depended on the volume of TSC. In addition, the obtained Cu 2 O thin films could degrade methyl orange (MO) efficiently in the presence of H 2 O 2 under visible-light irradiation, and the mechanism for the enhanced photocatalytic activity of the Cu 2 O thin films with the assistance of H 2 O 2 was also explored in detail. - Graphical abstract: Nano-structured Cu 2 O thin films have been prepared by a one-step chemical bath deposition method. The number density, crystallite size, surface morphology and orientation of these thin films could be tailored by chelating agent. The results confirmed that the crystallite size as well as the orientation of the thin films was dependent on the volume of TSC, showed that the band gap ranged from 2.71 eV to 2.49 eV. The formation mechanism of the Cu 2 O particles could be illuminated by an oriented attachment mode. In addition, the obtained Cu 2 O thin films degraded methyl orange efficiently in the presence of H 2 O 2 under the irradiation of visible light, and the mechanism for photocatalytic reaction was also discussed in detail. - Highlights: • Oriented Cu 2 O thin films were prepared by one-step chemical bath deposition. • Orientation and crystallite size were dependent on trisodium citrate volume. • The enhanced visible light degradation mechanism was systematically studied. • Oriented attachment

Effects of hydrazine on the solvothermal synthesis of Cu2ZnSnSe4 and Cu2CdSnSe4 nanocrystals for particle-based deposition of films

International Nuclear Information System (INIS)

Chiang, Ming-Hung; Fu, Yaw-Shyan; Shih, Cheng-Hung; Kuo, Chun-Cheng; Guo, Tzung-Fang; Lin, Wen-Tai

2013-01-01

The effects of hydrazine on the synthesis of Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 CdSnSe 4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu 2 Se, and Cu 2 SnSe 3 , and Cu 2 SnSe 3 and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu 2 ZnSnSe 4 and Cu 2 CdSnSe 4 nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices

One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

Science.gov (United States)

Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

2005-03-01

Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

Electrochemical synthesis of nanoplatelets-like CuS0.2Se0.8 thin film for photoluminescence applications

Directory of Open Access Journals (Sweden)

Sharma A. K.

2015-06-01

Full Text Available Copper sulfide-selenide (CuS0.2Se0.8 thin films were deposited on FTO coated glass substrate (fluorine doped tin oxide and stainless steel substrates using electrodeposition technique. Deposited thin films were characterized using different characterization techniques viz. X-ray diffraction (XRD, scanning electron microscopy (SEM, UV-Vis spectroscopy, photoluminescence spectroscopy and surface wettability. XRD study showed polycrystalline nature with cubic phase of the films. Scanning electron microscopy showed that the surface area of the substrate was covered by the nanoplatelets structure of a thickness of 140 to 150 nm and optical study showed that the direct band gap was ~1.90 eV. Surface wettability showed hydrophobic nature of the CuS0.2Se0.8 thin films.

Defect chemistry in CuGaS2 thin films: A photoluminescence study

International Nuclear Information System (INIS)

Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

2007-01-01

In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

X-ray photo-emission studies of Cu1-xTlxBa2Ca3Cu4O12-y superconductor thin films

International Nuclear Information System (INIS)

Khan, Nawazish A.; Mumtaz, M.; Ahadian, M.M.; Iraji-zad, Azam

2006-01-01

X-ray photo-emission spectroscopy (XPS) studies of Cu 1-x Tl x Ba 2 Ca 3 Cu 4 O 12-y superconductor thin films have been carried out for understanding the mechanism of superconductivity and to find out the reasons for the increase of zero resistivity critical temperature T c (R = 0) with post-annealing in a nitrogen atmosphere. It is observed from these studies that reduction of charge state of thallium is a source of doping of carriers to the CuO 2 planes. The reduced charge state of thallium (i.e. Tl 1+ ) promotes lower oxygen concentration in the charge reservoir layer, which possibly results in movement of electrons to the conducting CuO 2 planes. The higher density of electrons in the CuO 2 planes optimizes the hole concentration 'n p ' in these planes. The reduced charge state of thallium in the Cu 1-x Tl x Ba 2 O 4-δ charge reservoir layer is also supported by a shift of the Ba 3d 5/2 and Ba 3d 3/2 XPS lines to lower binding energies with post-annealing in nitrogen atmosphere. Moreover, the movement of the valance band spectrum to lower binding energies suggested that the electronic density of states changes in the valance band with the post-annealing in nitrogen, which possibly becomes a source of doping of carriers to the CuO 2 planes. The increased doping of electrons to the CuO 2 planes optimizes the Fermi-vector K F and Fermi-velocity V F of the carriers and increases the T c (R = 0) of final compound

Stability of Tl-Ba-Ca-Cu-O Superconducting Thin Films

Energy Technology Data Exchange (ETDEWEB)

Siegal, M.P.; Overmyer, D.L.; Venturini, E.L.; Padilla, R.R.; Provencio, P.N.

1999-08-23

We report the stability of TlBa{sub 2}CaCu{sub 2}O{sub 7} (Tl-1212) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (T1-2212) thin films and by inference, the stability of TlBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 9} (Tl-1223) and Tl{sub 2}Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10} (Tl-2223) thin films, under a variety of conditions. In general, we observe that the stability behavior of the single Tl-O layer materials (Tl-1212 and Tl-1223)are similar and the double Tl-O layer materials (Tl-2212 and Tl-2223) are similar. All films are stable with repeated thermal cycling to cryogenic temperatures. Films are also stable in acetone and methanol. Moisture degrades film quality rapidly, especially in the form of vapor. Tl-1212 is more sensitive to vapor than Tl-2212. These materials are stable to high temperatures in either N{sub 2}, similar to vacuum for the cuprates, and O{sub 2} ambients. While total degradation of properties (superconducting and structural) occur at the same temperatures for all phases, 600 C in N{sub 2} and 700 C in O{sub 2}, the onset of degradation occurs at somewhat lower temperatures for Tl-1212 than for Tl-2212 films. In all cases, sample degradation is associated with Tl depletion from the films.

Detecting properties of thin film superconducting bridges made of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kulikov, V.A.; Matveets, L.V.; Serebryakov, A.Yu.; Laptev, V.N.; Makhov, V.I.; Emel'yanenkov, D.G.; Inkin, Yu.N.

1989-01-01

Results of study of detecting properties of thin film YBa 2 Cu 3 O 7-x bridges, subjected to the effect of 8 mm SHF-radiation are presented. The transition temperatures of bridges were equal to 80-85 K. Current-voltage characteristics and response dependences of bridges with 67, 150 and 425 Ω resistances were measured. It is shown that thin film bridges of YBa 2 Cu 3 O 7-x , representing the system of weak bonds, demonstrate nonstationary Josephson effect and synchronization of weak bonds in bridge volume

Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

2009-02-02

Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

Off-axis sputter deposition of YBa2Cu3O7 thin films for microwave applications

International Nuclear Information System (INIS)

Greene, L.H.; Bagley, B.G.; Feldmann, W.L.; Barner, J.B.; Shokoohi, F.; Miceli, P.; Wilkens, B.J.; Fathy, A.; Kalokitis, D.; Pendrick, V.

1991-01-01

Thin films of superconducting YBa 2 Cu 3 O 7 were grown in situ by off-axis sputter deposition for microwave device fabrication. These ∼1 cm 2 films, which are reproducible, exhibit midpoint T c 's of 89--90.5 K as measured by ac susceptibility, ion channeling yields of 4.7%--6%, and c-axis rocking-curve half-widths of 0.5 degree, even with a rich microstructure as seen by scanning electron microscopy. Two films were photodefined into miniature X-band microwave bandpass filters. These narrow-band filters (0.5% bandwidth) exhibited 4.4-and 4.5-dB insertion losses at 77 K and 9.25 GHz, with little temperature dependence below 80 K

One-step chemical bath deposition and photocatalytic activity of Cu{sub 2}O thin films with orientation and size controlled by a chelating agent

Energy Technology Data Exchange (ETDEWEB)

Xu, HaiYan, E-mail: xuhaiyan@ahjzu.edu.cn; Dong, JinKuang, E-mail: dongjinkuang1988@126.com; Chen, Chen, E-mail: 13865901653@139.com

2014-01-15

Nanocrystalline cuprous oxide (Cu{sub 2}O) thin films were prepared via a one-step chemical bath deposition (CBD) method. The effects of a chelating agent on the orientation, morphology, crystallite size, and photocatalytic activity of the thin films were carefully examined using X-ray diffractometry, scanning electron microscopy, and UV–vis spectrophotometry. The results confirmed that the crystallite size as well as the orientation of the films was dependent on the volume of trisodium citrate (TSC), demonstrating that the band gap ranged from 2.71 eV to 2.49 eV. The morphology and number density of the thin films also depended on the volume of TSC. In addition, the obtained Cu{sub 2}O thin films could degrade methyl orange (MO) efficiently in the presence of H{sub 2}O{sub 2} under visible-light irradiation, and the mechanism for the enhanced photocatalytic activity of the Cu{sub 2}O thin films with the assistance of H{sub 2}O{sub 2} was also explored in detail. - Graphical abstract: Nano-structured Cu{sub 2}O thin films have been prepared by a one-step chemical bath deposition method. The number density, crystallite size, surface morphology and orientation of these thin films could be tailored by chelating agent. The results confirmed that the crystallite size as well as the orientation of the thin films was dependent on the volume of TSC, showed that the band gap ranged from 2.71 eV to 2.49 eV. The formation mechanism of the Cu{sub 2}O particles could be illuminated by an oriented attachment mode. In addition, the obtained Cu{sub 2}O thin films degraded methyl orange efficiently in the presence of H{sub 2}O{sub 2} under the irradiation of visible light, and the mechanism for photocatalytic reaction was also discussed in detail. - Highlights: • Oriented Cu{sub 2}O thin films were prepared by one-step chemical bath deposition. • Orientation and crystallite size were dependent on trisodium citrate volume. • The enhanced visible light degradation mechanism

Some Characteristics of r.f. Sputtered CuInS2 Thin Films

International Nuclear Information System (INIS)

Samaan, A.N.Y.; Al-Saffar, I.S.; Wasim, S.M.; Hill, A.E.; Armour, D.G.; Tomlinson, R.D.

1983-01-01

Electrical data from sputtered and annealed p-type CuInS 2 thin films have been obtained over a range of temperatures. An analysis of hole mobility vs. temperature data indicates that the charge carriers are predominantly scattered by neutral and ionized impurities and by acoustic-mode vibrations

Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study

KAUST Repository

Xiao, Zhen-Yu

2013-11-11

We report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55-1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu2ZnSnS4/Cu 2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers. © 2013 AIP Publishing LLC.

Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

Science.gov (United States)

Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

Energy Technology Data Exchange (ETDEWEB)

Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad (Iraq); Ahmed, Naser M., E-mail: naser@usm.my; Hassan, Z., E-mail: zai@usm.my; Azzez, Shrook A. [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, College of Education, Al-Mustansiriya University, Baghdad (Iraq); Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com [Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ministry of Education, the General Directorate for Educational Anbar (Iraq)

2016-07-06

The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Selenization of Cu2ZnSnS4 Enhanced the Performance of Dye-Sensitized Solar Cells: Improved Zinc-Site Catalytic Activity for I3.

Science.gov (United States)

Wang, Xiuwen; Xie, Ying; Bateer, Buhe; Pan, Kai; Jiao, Yanqing; Xiong, Ni; Wang, Song; Fu, Honggang

2017-11-01

Cu 2 ZnSnS 4 (CZTS) and Cu 2 ZnSn(S,Se) 4 (CZTSSe) as promising photovoltaic materials have drawn much attention because they are environmentally benign and earth-abundant elements. In this work, the monodispersed, low-cost Cu 2 ZnSnS 4 nanocrystals with small size have been controllably synthesized via a wet chemical routine. And CZTSSe could be easily prepared after selenization of CZTS. When they are employed as counter electrodes (CEs) for dye-sensitized solar cells (DSSCs), the power conversion efficiency (PCE) has been improved from 3.54% to 7.13% as CZTS is converted to CZTSSe, which is also compared to that of Pt (7.62%). The exact reason for the enhanced catalytic activity of I 3 - is discussed with the work function and density functional theory (DFT) when CZTSSe converted from CZTS. The results of a Kelvin probe suggest that the work function of CZTSSe (5.61 eV) is closer to that of Pt (5.65 eV) and higher than that of CZTS, which matched the redox shuttle potential better. According to the theory calculation, all the atomic and bond populations changed significantly when Se replaced partly the S on the CZTS system, especially in the Zn site. During the catalytic process as CEs, the adsorption energy obviously increased compared to those at other sites when I 3 - adsorbed on the Zn site in CZTSSe. So, Zn plays an important role for the reduction of I 3 - after CZTS is converted to CZTSSe. Based on above analysis, the reason for enhanced performance of DSSCs when CZTS converted to CZTSSe is mainly due to the enhancement of Zn-site activity. This work is beneficial for understanding the catalytic reaction mechanism of CZTS(Se) as CEs of DSSCs.

Growth and applications of superconducting Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Pinto, R.

1991-01-01

This paper attempt to highlight the important PVD techniques such as evaporation, sputtering, ion beam deposition and excimer laser ablation for the preparation of superconducting YBaCuO thin films. Since enormous amount of work has been published over the last few years, this review is not comprehensive even in PVD techniques. In the area of applications for electronics, thin film appear to be much more promising than bulk high T c superconductors. Already high J c values in the region of 4 x 10 6 A cm -2 have been realized in thin films. Resonators and transmission lines have been fabricated using 123 films showing a transmission loss significantly lower than that of copper at 77 degrees K at X-band frequencies. This review will discuss some of the important electronic applications feasible with 123 films

Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells

Directory of Open Access Journals (Sweden)

A. Le Donne

2015-01-01

Full Text Available Cu2ZnSnS4 (CZTS absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, GaSe2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

CuIn{sub x}Ga{sub 1-x}Se{sub 2} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Venkatachalam, M.; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R.; Nandakumar, A.K. [Thin Film Center, Department of Physics, PSG College of Technology (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology (India)

2008-05-15

CuIn{sub x}Ga{sub 1-x}Se{sub 2} bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuIn{sub x}Ga{sub 1-x}Se{sub 2} have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuIn{sub x}Ga{sub 1-x}Se{sub 2} films exhibited sharp luminescence peaks corresponding to the band gap of the material. (author)

Substrate decoration for improvement of current-carrying capabilities of YBa2Cu3Ox thin films

International Nuclear Information System (INIS)

Khoryushin, Alexey V.; Mozhaev, Peter B.; Mozhaeva, Julia E.; Bdikin, Igor K.; Zhao, Yue; Andersen, Niels H.; Jacobsen, Claus S.; Hansen, Jørn Bindslev

2013-01-01

Highlights: ► Effects of substrate decoration on properties of YBCO thin films were studied. ► Y 2 O 3 nanoparticles, ultra-thin Y 2 O 3 and Y:ZrO 2 layers were used as decoration layer. ► Decoration improves j C (5 T and 50 K) up to 0.97 MA/cm 2 vs. 0.76 MA/cm 2 for a reference film. ► Ultra-thin layer of yttria and yttria nanoparticles have a similar effect on YBCO. ► Y 2 O 3 decoration results in power law coefficient α = 0.3 vs. α = 0.4 for a reference film. -- Abstract: The effects of substrate decoration with yttria and Y:ZrO 2 on the structural and electrical properties of the YBa 2 Cu 3 O x (YBCO) thin films are studied. The films were deposited on (LaAlO 3 ) 3 –(Sr 2 AlTaO 8 ) 7 substrates by pulsed laser deposition. Two different structures of decoration layer were applied, a template layer of nanoparticles and an uniform ultra-thin layer. Significant improvement of current-carrying capabilities was observed, especially at high external magnetic fields. Structural studies of these films reveal the presence of extended linear defects in the YBCO matrix. The formation of these structures is attributed to seeding of randomly oriented YBCO grains due to suppression of epitaxy in the very beginning of the deposition. The films of both kinds of decoration layers show nearly the same improvement of j C over the reference film at 77 and 50 K: j C (5T and 50 K) reaches 0.92 and 0.97 MA/cm 2 for uniform and template decoration layers. At 5 and 20 K the effect of template decoration layers is more beneficial: j C (5T and 20 K) values are 3.5 and 4.1 MA/cm 2 , j C (5T and 5 K) values are 6.4 and 7.9 MA/cm 2 , for uniform and template decoration layers, respectively

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Energy Technology Data Exchange (ETDEWEB)

Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

2014-11-28

The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

Preparation and properties of Y{sub 1-x}Ho{sub x}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films by TFA-MOD method

Energy Technology Data Exchange (ETDEWEB)

Jian Hongbin [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li Qi; Shi Dongqi [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2522 (Australia); Zhang Li [Department of Mathematic and Physics, Anhui University of Architecture, Hefei 230022 (China); Yang Zhaorong [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Dou Shixue [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2522 (Australia); Zhu Xuebin, E-mail: xbzhu@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Sun Yuping [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2011-12-15

Y{sub 1-x}Ho{sub x}BCO thin films were prepared by TFA-MOD. The best performances were obtained for the Y{sub 0.6}Ho{sub 0.4}BCO thin film. The pinning mechanism was {delta}l-type for all derived thin films. Y{sub 1-x}Ho{sub x}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) thin films were prepared on LaAlO{sub 3} (0 0 1) substrates by trifluoroacetate metal organic deposition (TFA-MOD) without change of the processing parameters. The highest J{sub c} was attributed to the sample of Y{sub 0.6}Ho{sub 0.4}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} thin film, whose critical current density is about 1.6 times as compared to that of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin film at 77 K and self field. The flux pinning type was not varied with Ho substitution and can be attributed to {delta}l pinning model, which is attributed to the close ionic radius between the Y{sup 3+} and Ho{sup 3+} ions. The improvement of J{sub c} by Ho substitution without change of the processing parameters will provide an effective route to enhance the J{sub c} of YBCO-based thin films using TFA-MOD method.

Structural and optical properties of Cu2ZnSnS4 synthesized by ultrasonic assisted sol-gel method